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Sample records for treat epitaxial layer

  1. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  2. Optical characterization of epitaxial semiconductor layers

    CERN Document Server

    Richter, Wolfgang

    1996-01-01

    The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of ...

  3. Interface relaxation and band gap shift in epitaxial layers

    Directory of Open Access Journals (Sweden)

    Ziming Zhu

    2012-12-01

    Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

  4. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    operation of these devices strongly depend on the quality of the epitaxial layers. The growth system must be able to grow materials with very low unintentional impurity den- sity, high mobility and good luminescence properties. We have used LPE technique to perfect the growth of a num- ber of group III–V epitaxial materials ...

  5. Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baji, Zs., E-mail: baji.zsofia@ttk.mta.hu [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Lábadi, Z.; Molnár, Gy.; Pécz, B. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Vad, K. [Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), P.O. Box 51, H-4001, Debrecen (Hungary); Horváth, Z.E. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Szabó, P.J. [Budapest University of Technology and Economics, Műegyetem rkp. 3-9. H-1111 Budapest (Hungary); Nagata, T. [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Volk, J. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary)

    2014-07-01

    The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm with both the mobilities and the carrier concentrations being very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate. - Highlights: • High-quality epitaxial ZnO layers were deposited with ALD on GaN above 270 °C. • In the Al-doped layers, domains with different orientations also appear. • Lower-temperature epitaxy is possible with an epitaxial seed layer. • The conductivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm. • The high carrier concentration is resulted by the Ga and Al doping.

  6. Bismuth distribution in InSb/Bi epitaxial layers

    International Nuclear Information System (INIS)

    Lantsov, A.F.; Akchurin, R.Kh.; Zinov'ev, V.G.

    1981-01-01

    Bismuth distribution in epitaxial layers of InSb/Bi, prepared by liquid-phase epitaxy (LPE) on InSb sublayers, is studied. The solution-melt, crystallization is carried out from the compositions corresponded to the cross sections InSb-Bi, InSb-InBi and InSb-In 2 Bi of ternary system In-Sb-Bi and changed in the limits, determined by the state diagram liquidus in the temperature range from 220 to 450 deg C. The temperature dependence of the coefficients of bismuth distribution in epitaxial layers of InSb(Bi) is specified. The dependence of bismuth concentration on the composition of initial liquid phase is established [ru

  7. Characterization of GaN/AlGaN epitaxial layers grown by ...

    Indian Academy of Sciences (India)

    of the native substrate, GaN epitaxial layers are generally grown on sapphire or. SiC substrate with lattice and thermal mismatch. Growth of GaN epitaxial layers on such substrates, by using a low-temperature nucleation layer demonstrated a good crystal quality [4]. Remarkable improvement in epitaxial material quality is.

  8. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  9. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  10. Large-area, laterally-grown epitaxial semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  11. Interaction of GaN epitaxial layers with atomic hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

    2004-08-15

    GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

  12. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Dorokhov, A., E-mail: Andrei.Dorokhov@IReS.in2p3.f [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Bertolone, G.; Baudot, J.; Brogna, A.S.; Colledani, C.; Claus, G.; De Masi, R. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Deveaux, M. [Goethe-Universitaet Frankfurt am Main, Senckenberganlage 31, 60325 Frankfurt am Main (Germany); Doziere, G.; Dulinski, W. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France); Fontaine, J.-C. [Groupe de Recherche en Physique des Hautes Energies (GRPHE), Universite de Haute Alsace, 61, rue Albert Camus, 68093 Mulhouse (France); Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I. [Institut Pluridisciplinaire Hubert Curien (IPHC), 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2010-12-11

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) . Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10{mu}m pitch device was found to be {approx}10{sup 13}n{sub eq}/cm{sup 2}, while it was only 2x10{sup 12}n{sub eq}/cm{sup 2} for a 20{mu}m pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10{sup 14}) n{sub eq}/cm{sup 2}. This goal relies on a fabrication process featuring a 15{mu}m thin, high resistivity ({approx}1k{Omega}cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages (<5V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of {approx}50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered (3x10{sup 13}n{sub eq}/cm{sup 2}), making evidence of a significant extension of the radiation tolerance limits of MAPS.

  13. Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-04-01

    Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

  14. Atomic layer epitaxy of compound semiconductors with metalorganic precursors

    Science.gov (United States)

    DenBaars, S. P.; Dapkus, P. D.

    1989-11-01

    Atomic layer epitaxy (ALE) is a relatively new growth technology for depositing compound semiconductors one monolayer at a time. By employing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III-V compound semiconductor is formed in every cycle of the deposition. The use of metalorganic precursors for ALE is of considerable importance since it allows the hybridization of ALE with the existing MOCVD technique. Several benefits can be realized by integrating the two technologies. Layers of critical thickness and uniformity requirements can be grown by ALE, while thicker epitaxial layers can be grown by MOCVD. Additional advantages are the "digital growth" nature of ALE which affords a high degree of thickness reproducibility, and the selective area growth potential of laser-assisted ALE (LALE). In this paper, ALE and LALE of GaAs is reviewed with an emphasis on the utilization of metalorganic precursors.

  15. Epitaxially Grown Layered MFI–Bulk MFI Hybrid Zeolitic Materials

    KAUST Repository

    Kim, Wun-gwi

    2012-11-27

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N2 physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO2 and good CO2/CH4 selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO2 and CH4 gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface. © 2012 American Chemical Society.

  16. Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

    Science.gov (United States)

    Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

    2017-02-01

    Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Ar +-laser-assisted subatomic-layer epitaxy of Si

    Science.gov (United States)

    Suda, Yoshiyuki; Ishida, Masahiro; Yamashita, Mitsutomi

    1996-12-01

    Si submonolayer-by-submonolayer epitaxy or subatomic-layer epitaxy (SALE) from Si 2H 6 on Si(001) has been carried out by repeating Si 2H 6 exposure and surface excitation induced by the combination of substrate resistive heating and Ar + laser irradiation. As the average substrate temperature or the laser irradiation power increases, the surface morphology of a grown film changes from a convex shape to a concave shape through a trapezoid shape. The roughness of a flat area of the trapezoid film is within ±2A˚per growth thickness of 100A˚, and a substrate temperature window of˜ 15°C and a laser power window of˜ 0.25W, where such a flat growth surface and a constant growth rate are obtained, has been observed. The ranges of these windows have been estimated to correspond to the same variation of the surface temperature in the laser irradiation area during the laser irradiation. This result together with the result of the analyses on growth thickness distribution profiles suggests that the laser irradiation works as a thermal effect. Thus, in the Ar +-laser-assisted SALE method, the growth surface morphology then the growth mode is controlled by the surface temperature during the laser irradiation. An Ar + laser is a useful tool to control the surface temperature.

  18. Substrate-induced magnetism in epitaxial graphene buffer layers.

    Science.gov (United States)

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-08

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  19. Electron Scattering at Surfaces of Epitaxial Metal Layers

    Science.gov (United States)

    Chawla, Jasmeet Singh

    In the field of electron transport in metal films and wires, the 'size effect' refers to the increase in the resistivity of the films and wires as their critical dimensions (thickness of film, width and height of wires) approach or become less than the electron mean free path lambda, which is, for example, 39 nm for bulk copper at room temperature. This size-effect is currently of great concern to the semiconductor industry because the continued downscaling of feature sizes has already lead to Cu interconnect wires in this size effect regime, with a reported 2.5 times higher resistivity for 40 nm wide Cu wires than for bulk Cu. Silver is a possible alternate material for interconnect wires and titanium nitride is proposed as a gate metal in novel field-effect-transistors. Therefore, it is important to develop an understanding of how the growth, the surface morphology, and the microstructure of ultrathin (few nanometers) Cu, Ag and TiN layers affect their electrical properties. This dissertation aims to advance the scientific knowledge of electron scattering at surfaces (external surfaces and grain boundaries), that are, the primary reasons for the size-effect in metal conductors. The effect of surface and grain boundary scattering on the resistivity of Cu thin films and nanowires is separately quantified using (i) in situ transport measurements on single-crystal, atomically smooth Cu(001) layers, (ii) textured polycrystalline Cu(111) layers and patterned wires with independently varying grain size, thickness and line width, and (iii) in situ grown interfaces including Cu-Ta, Cu-MgO, Cu-vacuum and Cu-oxygen. In addition, the electron surface scattering is also measured in situ for single-crystal Ag(001), (111) twinned epitaxial Ag(001), and single-crystal TiN(001) layers. Cu(001), Ag(001), and TiN(001) layers with a minimum continuous thickness of 4, 3.5 and 1.8 nm, respectively, are grown by ultra-high vacuum magnetron sputter deposition on MgO(001) substrates with

  20. Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

    International Nuclear Information System (INIS)

    Fritz, I.J.

    1987-01-01

    Experimental measurements of critical layer thicknesses (CLT's) in strained-layer epitaxy are considered. Finite experimental resolution can have a major effect on measured CLT's and can easily lead to spurious results. The theoretical approach to critical layer thicknesses of J. W. Matthews [J. Vac. Sci. Technol. 12, 126 (1975)] has been modified in a straightforward way to predict the apparent critical thickness for an experiment with finite resolution in lattice parameter. The theory has also been modified to account for the general empirical result that fewer misfit dislocations are generated than predicted by equilibrium calculation. The resulting expression is fit to recent x-ray diffraction data on InGaAs/GaAs and SiGe/Si. The results suggest that CLT's in these systems may not be significantly larger than predicted by equilibrium theory, in agreement with high-resolution measurements

  1. Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

    International Nuclear Information System (INIS)

    Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

    2015-01-01

    Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

  2. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth

    International Nuclear Information System (INIS)

    Kim, Yihwan; Shapiro, Noad A.; Feick, Henning; Armitage, Robert; Weber, Eicke R.; Yang, Yi; Cerrina, Franco

    2001-01-01

    Gallium nitride epitaxial layers were grown on sapphire by molecular-beam epitaxy using nitridated gallium metal films as buffer layers. The mechanical properties of the buffer layers were investigated and correlated with their chemical composition as determined by synchrotron radiation photoelectron spectroscopy. Biaxial tension experiments were performed by bending the substrates in a pressure cell designed for simultaneous photoluminescence measurements. The shift of the excitonic luminescence peak was used to determine the stress induced in the main GaN epilayer. The fraction of stress transferred from substrate to main layer was as low as 27% for samples grown on nitridated metal buffer layers, compared to nearly 100% for samples on conventional low-temperature GaN buffer layers. The efficiency of stress relief increased in proportion to the fraction of metallic Ga in the nitridated metal buffer layers. These findings suggest GaN films containing residual metallic Ga may serve as compliant buffer layers for heteroepitaxy

  3. GaN:Co epitaxial layers grown by MOVPE

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

    2015-01-01

    Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

  4. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, V. P., E-mail: kuznetsov_vp@mail.ru [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Shmagin, V. B.; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Marychev, M. O. [Lobachevsky State University (Russian Federation); Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kuznetsov, M. V. [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Andreev, B. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kornaukhov, A. V. [Lobachevsky State University, Research Physicotechnical Institute (Russian Federation); Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-01-15

    The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400-800 Degree-Sign C and annealed in hydrogen atmosphere at a temperature of 800 Degree-Sign C for 30 min. The possible nature of the donor centers is discussed.

  5. Characterization of GaN/AlGaN epitaxial layers grown by ...

    Indian Academy of Sciences (India)

    s and carrier concentration is 4.5 × 1016/cm3. Dislocation density of GaN buffer layer, 2×108/cm2, was measured by AFM after wet etching. The refractive indices of GaN buffer layer at 633 nm is 2.3544 for TE mode and 2.1515 for TM mode. This data demonstrate the quality achieved for GaN and AlGaN epitaxial layers.

  6. Remote epitaxy through graphene enables two-dimensional material-based layer transfer

    Science.gov (United States)

    Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang; Alawode, Babatunde O.; Choi, Chanyeol; Song, Yi; Johnson, Jared M.; Heidelberger, Christopher; Kong, Wei; Choi, Shinhyun; Qiao, Kuan; Almansouri, Ibraheem; Fitzgerald, Eugene A.; Kong, Jing; Kolpak, Alexie M.; Hwang, Jinwoo; Kim, Jeehwan

    2017-04-01

    Epitaxy—the growth of a crystalline material on a substrate—is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals interactions, and which also allows facile layer release from 2D surfaces. It has been thought that 2D materials are the only seed layers for van der Waals epitaxy. However, the substrates below 2D materials may still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wetting transparency documented for graphene. Here we show that the weak van der Waals potential of graphene cannot completely screen the stronger potential field of many substrates, which enables epitaxial growth to occur despite its presence. We use density functional theory calculations to establish that adatoms will experience remote epitaxial registry with a substrate through a substrate-epilayer gap of up to nine ångströms this gap can accommodate a monolayer of graphene. We confirm the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and show that the approach is also applicable to InP and GaP. The grown single-crystalline films are rapidly released from the graphene-coated substrate and perform as well as conventionally prepared films when incorporated in light-emitting devices. This technique enables any type of semiconductor film to be copied from underlying substrates through 2D materials, and then the resultant epilayer to be rapidly released and transferred to a substrate of interest. This process is particularly attractive in the context of non-silicon electronics and photonics, where the ability to re-use the graphene-coated substrates allows savings on the high cost of non-silicon substrates.

  7. Formation of HgSe thin films using electrochemical atomic Layer epitaxy

    CSIR Research Space (South Africa)

    Mathe, MK

    2005-09-01

    Full Text Available The growth of HgSe using electrochemical atomic-layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of ALE, where electrochemical surface-limited reactions referred to as underpotential deposits, generally result...

  8. Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yen-Liang [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Tsai, Jenn-Kai [Department of Electronics Engineering, National Formosa University, Hu-Wei, Yun-Lin County 63208, Taiwan, ROC (China); Schuber, Ralf; Schaadt, Daniel [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

    2012-07-31

    We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69 Double-Prime to 59.43 Double-Prime for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 Multiplication-Sign 5 {mu}m{sup 2} with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: Black-Right-Pointing-Pointer The samples were grown by plasma-assisted molecular beam epitaxy. Black-Right-Pointing-Pointer The GaN epilayer was grown on sapphire substrate. Black-Right-Pointing-Pointer The samples were characterized by X-ray diffraction and atomic force microscopy. Black-Right-Pointing-Pointer The sample quality was improved by gradient buffer layer.

  9. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  10. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  11. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  12. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.

    1997-11-01

    Epitaxial grown thick layers (>100 μm) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2·10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5·10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects, in epitaxial layers. The 'sinking' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1·10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3·10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  13. Characterization and growth of epitaxial layers of Gs exhibiting high resistivity for ionic implantation

    Science.gov (United States)

    1979-01-01

    Either classical or low temperature epitaxial growth techniques can be used to control the deposition of buffer layers of GaAs on semiconducting substrates and to obtain the resistivity and purity desired. Techniques developed to study, as a function of thickness, the evolution of mobilities by photoHall, and the spectroscopy of shallow and deep centers by cathodoluminescence and current transients reveal one very pure layer of medium resistivity and high mobility, and another "dead layer" of elevated resistivity far from the surface. The highly resistive layer remains pure over several microns, which appears interesting for implantation.

  14. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  15. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-10-30

    Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  16. Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Chierchia, Rosa

    2007-07-01

    This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

  17. Ultrahard carbon film from epitaxial two-layer graphene

    Science.gov (United States)

    Gao, Yang; Cao, Tengfei; Cellini, Filippo; Berger, Claire; de Heer, Walter A.; Tosatti, Erio; Riedo, Elisa; Bongiorno, Angelo

    2018-02-01

    Atomically thin graphene exhibits fascinating mechanical properties, although its hardness and transverse stiffness are inferior to those of diamond. So far, there has been no practical demonstration of the transformation of multilayer graphene into diamond-like ultrahard structures. Here we show that at room temperature and after nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness comparable to diamond, is resistant to perforation with a diamond indenter and shows a reversible drop in electrical conductivity upon indentation. Density functional theory calculations suggest that, upon compression, the two-layer graphene film transforms into a diamond-like film, producing both elastic deformations and sp2 to sp3 chemical changes. Experiments and calculations show that this reversible phase change is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers. Indeed, calculations show that whereas in two-layer graphene layer-stacking configuration controls the conformation of the diamond-like film, in a multilayer film it hinders the phase transformation.

  18. A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

    Science.gov (United States)

    Zhan, Linjie; Wan, Wen; Zhu, Zhenwei; Zhao, Zhijuan; Zhang, Zhenhan; Shih, Tien-Mo; Cai, Weiwei

    2017-07-01

    Graphene, a member of layered two-dimensional (2D) materials, possesses high carrier mobility, mechanical flexibility, and optical transparency, as well as enjoying a wide range of promising applications in electronics. Adopting the chemical vaporization deposition method, the majority of investigators have ubiquitously grown single layer graphene (SLG), which inevitably involves polycrystalline properties. Here we demonstrate a simple method for the direct visualization of arbitrarily large-size SLG domains by synthesizing one-hundred-nm-scale MoS2 single crystals via a high-vacuum molecular beam epitaxy process. The present study based on epitaxial growth provides a guide for probing the grain boundaries of various 2D materials and implements higher potentials for the next-generation electronic devices.

  19. Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2

    Science.gov (United States)

    Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; Prüser, Henning; Friedlein, Rainer; Sadowski, Jerzy T.; Hirjibehedin, Cyrus F.; Yamada-Takamura, Yukiko

    2017-06-01

    Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.

  20. Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Yaremchuk, A. F.; Starkov, A. V.; Zaikin, A. V., E-mail: lynch0000@gmail.com [National Rsearch University MIET (Russian Federation); Alekseev, A. V. [ZAO “Telekom-STV” (Russian Federation); Sokolov, E. M. [ZAO “Epiel” (Russian Federation)

    2014-12-15

    The surface photovoltage method is used to study “silicon-on-sapphire” epitaxial layers with a thickness of 0.3–0.6 μm, which are used to fabricate p-channel MOS (metal—oxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ∼400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a “silicon-on-sapphire” structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.

  1. Defect analysis of NiMnSb epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Nowicki, L. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland)]. E-mail: lech.nowicki@fuw.edu.pl; Turos, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Stonert, A. [Andrzej SoItan Institute for Nuclear Studies, ul. Hoza 69, 00-681 Warsaw (Poland); Garrido, F. [Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3-Universite Paris-Sud, 91405 Orsay (France); Molenkamp, L.W. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Bach, P. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Schmidt, G. [Department of Physics, University Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Karczewski, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, POB 510119, 01314 Dresden (Germany)

    2005-10-15

    NiMnSb layers grown on InP substrates with InGaAs buffer were studied by the backscattering/channeling spectrometry (RBS/C) with He beams. The nature of predominant defects observed in the layers was studied by determination of incident-energy dependence of the relative channeling yield. The defects are described as a combination of large amount of interstitial atoms and of stacking faults or grain boundaries. The presence of grains was confirmed by transmission electron microscopy.

  2. Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

    Science.gov (United States)

    2016-09-01

    Semiconductor Tin by P Folkes, P Taylor, C Rong, B Nichols, H Hier, and M Neupane Approved for public release; distribution...Laboratory Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin by P Folkes, P Taylor, C Rong, B Nichols... Semiconductor Tin 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) P Folkes, P Taylor, C Rong, B Nichols, H Hier, and M

  3. Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth

    International Nuclear Information System (INIS)

    Oliver, R A; Bennett, S E; Sumner, J; Kappers, M J; Humphreys, C J

    2010-01-01

    Epitaxial layer overgrowth (ELOG) is a common technique for dislocation density reduction in GaN heteroepitaxy. Here, scanning capacitance microscopy is used to study the variations in unintentional doping arising from the ELOG process and reveals facet-dependent incorporation of n-type dopants during the initial regrowth of GaN, and then p-type doping arising from the use of bis(cyclopentadienyl)magnesium to enhance lateral growth during the coalescence stage.

  4. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  5. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  6. Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers

    Science.gov (United States)

    1988-07-01

    R. Shealy, Appl. Phys. Lett. 48, 925 (1986). "M. Razeghi and J. I’. Duchenin, J. Cryst (irokl 70. 145 ’H. Temkin , M. B. Panish, P.M. Petroff, K. A...exposure time, it is possible 500-A GaAso9 P00 y cap. The GaAs 97 P 0 3 layers were that the adsorption process is controlled by surface kinetics grown

  7. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    The gas lines are normally made of 316 stainless steel. Before installation, the inside of the tubes and valves are cleaned and passivated and (v) Pyrex or corning glass containers are used for cleaning the source materials and the substrate. These containers are, from time to time, treated with hot aqua regia and washed in.

  8. Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition

    Science.gov (United States)

    Lin, Edward L.; Posadas, Agham B.; Wu, Hsin Wei; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2017-10-01

    Barium titanate BaTiO3 (BTO) thin films were epitaxially grown at 225 °C on 2 × 1-reconstructed Ge(001) surfaces via atomic layer deposition (ALD). Approximately 2 nm of BTO film was grown directly on Ge(001) as an amorphous film. Electron diffraction confirmed the epitaxy of the BTO films after post-deposition annealing at 650 °C. Additional BTO layers grown on the crystalline BTO/Ge(001) film were crystalline as-deposited. X-ray diffraction indicated that the epitaxial BTO films had a c-axis out-of-plane orientation, and the abrupt BTO/Ge interface was preserved with no sign of any interfacial germanium oxide. Scanning transmission electron microscopy provided evidence of Ba atoms occupying the troughs of the dimer rows of the 2 × 1-reconstructed Ge(001) surface, as well as preservation of the 2 × 1-reconstructed Ge(001) surface. This study presents a low-temperature process to fabricate BTO/Ge heterostructures.

  9. Optical properties of pure and Ce{sup 3+} doped gadolinium gallium garnet crystals and epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Syvorotka, I.I. [Scientific Research Company “Carat”, 202 Stryjska Street, Lviv 79031 (Ukraine); Sugak, D. [Scientific Research Company “Carat”, 202 Stryjska Street, Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12, S. Bandera Street, Lviv, 79013 (Ukraine); Wierzbicka, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Wittlin, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Cardinal Stefan Wyszyński University in Warsaw, ul. Dewajtis 5, 01-815 Warsaw (Poland); Przybylińska, H. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Barzowska, J. [Institute of Experimental Physics, Gdańsk University, ul. Wita Stwosza 57, Gdańsk (Poland); Barcz, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw (Poland); Berkowski, M.; Domagała, J. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Mahlik, S.; Grinberg, M. [Institute of Experimental Physics, Gdańsk University, ul. Wita Stwosza 57, Gdańsk (Poland); Ma, Chong-Geng [College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); and others

    2015-08-15

    Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce{sup 3+} related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce{sup 3+} multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce{sup 3+} by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG.

  10. TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers

    Science.gov (United States)

    Liliental-Weber, Z.

    2008-08-01

    The formation of structural defects in GaN grown in non-polar directions is reviewed based on transmission electron microscopy (TEM) studies. Stacking faults (SFs) formed on c-planes and also on prismatic planes bounded by partial dislocations, in addition to full dislocations, are major defects in these layers. Since c-planes are arranged perpendicular to the substrate, these defects propagate to the sample surface through the active areas of the devices and become detrimental for device applications. An established method to decrease the defect density is lateral epitaxial overgrowth (LEO) and pendeo-epitaxy. The measured density of SFs in the seed areas is ˜1.3×10 6 cm -1and in the 'wing' areas ˜1.2×10 4 cm -1; a decrease of almost of two orders of magnitude. For overgrown samples, two opposite wings grow in opposite polar directions: [0 0 0 1] (Ga-growth polarity) and [0 0 0 1] (N-growth polarity) confirmed by convergent beam electron diffraction. Ga-polar wings are wider and often have different height than those grown with N-polarity, therefore planarity of these layers and cracking at the meeting front of two wings often occur. It is shown that two-step growth using MOCVD leads to satisfactory layer planarity.

  11. The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

    International Nuclear Information System (INIS)

    Watson, G.P.; Ast, D.G.; Anderson, T.J.; Pathangey, B.

    1993-01-01

    In a previous report [G. P. Watson, D. G. Ast, T. J. Anderson, and Y. Hayakawa, Appl. Phys. Lett. 58, 2517 (1991)] we demonstrated that the motion of misfit dislocations in InGaAs, grown by organometallic vapor phase epitaxy on patterned GaAs substrates, can be impeded even if the strained epitaxial layer is continuous. Trenches etched into GaAs before growth are known to act as a barrier to misfit dislocation propagation [E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, J. Appl. Phys. 65, 2220 (1989)] when those trenches create discontinuities in the epitaxial layers; but even shallow trenches, with continuous strained layers following the surface features, can act as barriers. By considering the strain energy required to change the length of the dislocation glide segments that stretch from the interface to the free surface, a simple model is developed that explains the major features of the unique blocking action observed at the trench edges. The trench wall angle is found to be an important parameter in determining whether or not a trench will block dislocation glide. The predicted blocking angles are consistent with observations made on continuous 300 and 600 nm thick In 0.04 Ga 0.96 As films on patterned GaAs. Based on the model, a structure is proposed that may be used as a filter to yield misfit dislocations with identical Burgers vectors or dislocations which slip in only one glide plane

  12. Peculiarities of the phonon spectrum of InxGa1-xAs epitaxial layers

    International Nuclear Information System (INIS)

    Solov'eva, E.V.; Gogaladze, D.T.; Belogorokhov, A.N.

    1991-01-01

    Consideration is given to results of investigation of In 053 Ga 0.47 As epitaxial layers, oriented in (100) plane and grown in 750-550 deg C range. Reguliarities of change of phonon spectrum, representing a sensitive function of the character of atom distribution in crystal lattice and forces of their interaction, were studied. It is shown that change of crystallization temperature leads to change of the character of distribution of solid solution components: from chaotic one (at 750 deg C) through ordering to clustering

  13. Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyunyong; Borondics, Ferenc; Siegel, David A.; Zhou, Shuyun Y.; Martin, Michael C.; Lanzara, Alessandra; Kaindl, Robert A.

    2009-03-26

    We study the broadband optical conductivity and ultrafast carrier dynamics of epitaxial graphene in the few-layer limit. Equilibrium spectra of nominally buffer, monolayer, and multilayer graphene exhibit significant terahertz and near-infrared absorption, consistent with a model of intra- and interband transitions in a dense Dirac electron plasma. Non-equilibrium terahertz transmission changes after photoexcitation are shown to be dominated by excess hole carriers, with a 1.2-ps mono-exponential decay that refects the minority-carrier recombination time.

  14. Photoelectromagnetic effect in Hg1-xCdxTe epitaxial layers

    International Nuclear Information System (INIS)

    Gassan-Zade, S.G.; Staryi, S.V.; Strikha, M.V.; Shepelsky, G.A.

    2004-01-01

    A generalized model of the photoelectromagnetic effect (PME) in epitaxial layers (EL) is formulated that takes into account a presence of the space charge region (SCR) on the free surface and the graded gap region (GGR) at the interface with a substrate. It is shown that the diffusion currents of excess minority carriers, on the one hand, and their drift currents in SCR and GGR, on the other one, may flow in alternative directions and, when the latter currents dominate, the sign of photoelectromagnetic current J PME can take an opposite value thus allowing observation of the anomalous PME

  15. Efficient Exciton Diffusion and Resonance-Energy Transfer in Multi-Layered Organic Epitaxial Nanofibers

    DEFF Research Database (Denmark)

    Tavares, Luciana; Cadelano, Michele; Quochi, Francesco

    2015-01-01

    ) spectroscopy to quantify exciton diffusion and resonance-energy transfer (RET) processes in multi-layered nanofibers consisting of alternating layers of para-hexaphenyl (p6P) and α-sexithiophene (6T), serving as exciton donor and acceptor material, respectively. The high probability for RET processes......-to-6T resonance-energy transfer efficiency, and the observed weak PL temperature dependence of the 6T acceptor material together result in an exceptionally high optical emission performance of this all-organic material system, thus making it well suited for example for organic light-emitting devices....... is confirmed by Quantum Chemical calculations. The activation energy for exciton diffusion in p6P is determined to be as low as 19 meV, proving p6P epitaxial layers also as a very suitable donor material system. The small activation energy for exciton diffusion of the p6P donor material, the inferred high p6P...

  16. Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

    International Nuclear Information System (INIS)

    Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

    2004-01-01

    The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

  17. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

    Directory of Open Access Journals (Sweden)

    Jaber Derakhshandeh

    2011-12-01

    Full Text Available An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.

  18. Growth and characterization of epitaxial layers of Ge on Si substrates

    International Nuclear Information System (INIS)

    Fathy, D.; White, C.W.; Holland, O.W.

    1987-03-01

    Thin single crystalline layers of Ge with atomically sharp boundaries have been formed epitaxially on (100) Si substrates. This was done by 74 Ge ion implantation into Si followed by steam oxidation. Using both Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM), we have found that a Ge layer forms as a result of Ge segregated at the moving SiO 2 interface during steam oxidation. For a SiO 2 layer that has swept through the implanted region, essentially all of the Ge is snow-ploughed and no Ge is lost to the oxide layer. The Ge layers and its two bounding interfaces, i.e., Ge/SiO 2 and Ge/Si, have been characterized as a function of the implantation dose and energy. The thickness of the Ge layer formed is dependent on the implantation dose. Thicknesses from a fraction of a monolayer to greater than 50 monolayers of Ge can be formed on Si by this mechanism. Initially the Ge layer forms a coherent interface with the underlying Si with no misfit dislocations, and misfit dislocations only appear as the thickness of the film is increased

  19. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1998-01-01

    The kinetics of dopant-enhanced solid phase epitaxy (SPE) have been measured in buried a-Si layers doped with arsenic. SPE rates were measured over the temperature range 480 - 660 deg C for buried a-Si layers containing ten different As concentrations. In the absence of H-retardation effects, the dopant-enhanced SPE rate is observed to depend linearly on the As concentration over the entire range of concentrations, 1-16 x 10 19 cm -3 covered in the study. The Fermi level energy was calculated as a function of doping and find an equation that can provide good fits to the data. The implications of these results for models of the SPE process is discussed

  20. Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

    Science.gov (United States)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.; Rubets, V. P.

    2018-03-01

    An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe2, a high-quality 100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.

  1. Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer.

    Science.gov (United States)

    N Nair, Maya; Palacio, Irene; Celis, Arlensiú; Zobelli, Alberto; Gloter, Alexandre; Kubsky, Stefan; Turmaud, Jean-Philippe; Conrad, Matthew; Berger, Claire; de Heer, Walter; Conrad, Edward H; Taleb-Ibrahimi, Amina; Tejeda, Antonio

    2017-04-12

    The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp 2 hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.

  2. Parameters of the layer of semiconductor epitaxial A3B5 heterostructures depending on the conditions of liquid-phase epitaxy (In-Ga-As-Sb system taken as an example)

    International Nuclear Information System (INIS)

    Grebenyuk, A.M.; Litvak, A.M.; Popov, A.A.; Syavris, S.V.; Charykov, N.A.

    1991-01-01

    Growth parameter dependence on liquid phase epitaxy (LPE)-initially crystallized compositions of liquid (X l ) and solid phases (interconnected by phase equilibrium conditions) and temperature of epitaxial growth beginning - is studied by example of the In-Ga-As-Sb system. The results obtained do not change qualitatively by transfer to other A 3 B 5 systems. It is shown that application of maximum high synthesis temperatures, corresponding to the melt molecular composition, is most advantageous for obtaining A 3 B 5 qualitative epitaxial layers by liquid phase epitaxy method

  3. Surface analysis of topmost layer of epitaxial layered oxide thin film: Application to delafossite oxide for oxygen evolution reaction

    Science.gov (United States)

    Toyoda, Kenji; Adachi, Hideaki; Miyata, Nobuhiro; Hinogami, Reiko; Orikasa, Yuki; Uchimoto, Yoshiharu

    2018-02-01

    Delafossite oxides (ABO2) have a layered structure with alternating layers of A and B elements, the topmost layer of which appears to determine their performance, such as the oxygen evolution reaction (OER) activity. In this study, we investigated the topmost layer of single-domain (0 0 1)-oriented AgCoO2 epitaxial thin film for potential use as an OER catalyst. The thin film was confirmed to possess OER activity at a level comparable to the catalyst in powder form. Atomic scattering spectroscopy revealed the topmost layer to be composed of CoO6 octahedra. In situ X-ray absorption spectroscopy showed that the oxidation of Co at the surface did not change under different potentials, which suggests that there is no valence fluctuation of Co in the stable CoO6 octahedral structure. However, the oxidation number of Co at the surface was lower than that in the bulk. Our density functional theoretical calculations also showed the Co atoms at the surface to have a slightly higher electron occupancy than those in the bulk, and suggests that the unoccupied t2g states of Co at the surface have an influence on OER activity.

  4. Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

    International Nuclear Information System (INIS)

    Shieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung

    2015-01-01

    In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic chemical vapor deposition. The effect of in-situ Ti metal nitridation on the performance of these InGaN-based LEDs was then investigated. It was very clear that the use of the nitrided Ti buffer layer (NTBL) induced the formation of a nanoscale epitaxial lateral overgrowth layer during the epitaxial growth. When evaluated by Raman spectroscopy, this epi-layer exhibited large in-plane compressive stress releasing with a Raman shift value of 567.9 cm -1 . Cathodoluminescence spectroscopy and transmission electron microscopy results indicated that the InGaN-based LEDs with an NTBL have improved crystal quality, with a low threading dislocations density being yielded via the strain relaxation in the InGaN-based LEDs. Based on the results mentioned above, the electroluminescence results indicate that the light performance of InGaN-based LEDs with an NTBL can be enhanced by 45% and 42% at 20 mA and 100 mA, respectively. These results suggest that the strain relaxation and quality improvement in the GaN epilayer could be responsible for the enhancement of emission power. - Highlights: • The crystal-quality of InGaN-based LEDs with NTBL by NELOG was improved. • The InGaN-based LEDs with NTBL have strain releases by NELOG. • The optical properties of InGaN-based LEDs were shown by CL and EL measurements

  5. Growth of layered superconductor β-PdBi{sub 2} films using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, N.V., E-mail: denisov@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Matetskiy, A.V.; Tupkalo, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-04-15

    Highlights: • Bulk β-PdBi{sub 2} is layered material with advanced properties of topological superconductor. • We present a method for growing β-PdBi{sub 2} films of a desired thickness. • Method utilizes MBE growth of β-PdBi{sub 2}, using Bi(111) film on Si(111) as a template. • Electronic and superconducting properties of the films are similar to those of bulk β-PdBi{sub 2}. - Abstract: Bulk β-PdBi{sub 2} layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow β-PdBi{sub 2} films from a single β-PdBi{sub 2} triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk β-PdBi{sub 2} crystals. Ability to grow the β-PdBi{sub 2} films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material.

  6. Optimization studies of HgSe thin film deposition by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-06-01

    Full Text Available Studies of the optimization of HgSe thin film deposition using electrochemical atomic layer epitaxy (EC-ALE) are reported. Cyclic voltammetry was used to obtain approximate deposition potentials for each element. These potentials were then coupled...

  7. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique

    Science.gov (United States)

    Deng, Qiufang; Guo, Lu; Liang, Song; Sun, Siwei; Xie, Xiao; Zhu, Hongliang; Wang, Wei

    2018-04-01

    AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of - 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.

  8. The effect of a thin silver layer on the critical current of epitaxial YBCO films

    International Nuclear Information System (INIS)

    Polturak, E.; Koren, G.; Cohen, D.; Cohen, D.; Snapiro, I.

    1992-01-01

    We compare measurements of the critical current density of an epitaxial YBCO film with that of an identical film overlaid by a thin silver layer. We find that the presence of the silver lowers Tc of the film by about 1.5 K, which is two orders of magnitude larger than predicted by the theory of the proximity effect for our experimental conditions. In addition, J c of the Ag/YBCO film near Tc is also significantly lower than that of the bare YBCO film. We propose two alternate interpretations of this effect, one in terms of destabilization of the flux distribution in the film and the other making use of the effect of the silver on the Bean-Livingston surface barrier for the initial penetration of flux. The latter seems the more plausible explanation of our results. (orig.)

  9. Effect of weak metallic contamination on silicon epitaxial layer and gate oxide integrity

    Energy Technology Data Exchange (ETDEWEB)

    Mello, D.; Coccorese, C.; Ferlito, E.; Sciuto, G.; Ricciari, R.; Barbarino, P.; Astuto, M. [STMicroelectronics, Physics Lab. Stradale primosole, 50 I-95121 Catania (Italy)

    2011-08-15

    The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy-band gap. The presence of trace of metals on the silicon surface can also degrade the gate oxide integrity, cause structural defect in silicon epitaxial layers or anomalies in silicon/gate oxide interface. Usually in semiconductor manufacturing superficial metallic contamination is monitored using Total X-ray Reflection Fluorescence spectroscopy (TXRF) and performing specific electrical measurements on dedicated capacitor. In this work a weak contamination, undetected by TXRF analysis, was revealed by Transmission Electron Microscopy (TEM) observing lattice damaging and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) detecting an anomalous Na distribution in depth profile. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites

    Energy Technology Data Exchange (ETDEWEB)

    Andersen, Tassie K. [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Cook, Seyoung [Materials Science; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Wan, Gang [Materials Science; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Marks, Laurence D. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States; Fong, Dillon D. [Materials Science

    2018-01-31

    Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as a function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.

  11. Temperature dependence of photoluminescence from ordered GaInP{sub 2} epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, T. [Instituto de Ciencias, BUAP, Apartado Postal 207, 72000 Puebla, Pue. (Mexico); Pelosi, C. [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2010-01-15

    The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP{sub 2} epitaxial layer was measured at temperatures of 10 - 300 K. Within this temperature range the PL emission is dominated by band-to-band radiative recombination. The PL intensity temperature dependence has two regions: at low temperatures it quenches rapidly as the temperature increases, and above 100 K it reduces slowly. This temperature behavior is compared with that of disordered GaInP{sub 2} layer. The specter of the PL emission of the disordered layer has two peaks, which are identified as due to donor-accepter (D-A) and band-to-band recombination. The PL intensity quenching of these spectral bands is very different: With increasing temperature, the D-A peak intensity remains almost unchanged at low temperatures and then decreases at a higher rate. The intensity of the band-to-band recombination peak decays gradually, having a higher rate at low temperatures than at higher temperatures. Comparing these temperature dependencies of these PL peaks of ordered and disordered alloys and the temperature behavior of their full width at half maximum (FWHM), we conclude that the different morphology of these alloys causes their different temperature behavior. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Properties of copper (fluoro-)phthalocyanine layers deposited on epitaxial graphene.

    Science.gov (United States)

    Ren, Jun; Meng, Sheng; Wang, Yi-Lin; Ma, Xu-Cun; Xue, Qi-Kun; Kaxiras, Efthimios

    2011-05-21

    We investigate the atomic structure and electronic properties of monolayers of copper phthalocyanines (CuPc) deposited on epitaxial graphene substrate. We focus in particular on hexadecafluorophthalocyanine (F(16)CuPc), using both theoretical and experimental (scanning tunneling microscopy - STM) studies. For the individual CuPc and F(16)CuPc molecules, we calculated the electronic and optical properties using density functional theory (DFT) and time-dependent DFT and found a red-shift in the absorption peaks of F(16)CuPc relative to those of CuPc. In F(16)CuPc, the electronic wavefunctions are more polarized toward the electronegative fluorine atoms and away from the Cu atom at the center of the molecule. When adsorbed on graphene, the molecules lie flat and form closely packed patterns: F(16)CuPc forms a hexagonal pattern with two well-ordered alternating α and β stripes while CuPc arranges into a square lattice. The competition between molecule-substrate and intermolecular van der Waals interactions plays a crucial role in establishing the molecular patterns leading to tunable electron transfer from graphene to the molecules. This transfer is controlled by the layer thickness of, or the applied voltage on, epitaxial graphene resulting in selective F(16)CuPc adsorption, as observed in STM experiments. In addition, phthalocyanine adsorption modifies the electronic structure of the underlying graphene substrate introducing intensity smoothing in the range of 2-3 eV below the Dirac point (E(D)) and a small peak in the density of states at ∼0.4 eV above E(D). © 2011 American Institute of Physics.

  13. DOE-EPSCoR. Exchange interactions in epitaxial intermetallic layered systems

    Energy Technology Data Exchange (ETDEWEB)

    LeClair, Patrick R. [Univ. of Alabama, Tuscaloosa, AL (United States); Gary, Mankey J. [Univ. of Alabama, Tuscaloosa, AL (United States)

    2015-05-25

    The goal of this research is to develop a fundamental understanding of the exchange interactions in epitaxial intermetallic alloy thin films and multilayers, including films and multilayers of Fe-Pt, Co-Pt and Fe-P-Rh alloys deposited on MgO and Al2O3 substrates. Our prior results have revealed that these materials have a rich variety of ferromagnetic, paramagnetic and antiferromagnetic phases which are sensitive functions of composition, substrate symmetry and layer thickness. Epitaxial antiferromagnetic films of FePt alloys exhibit a different phase diagram than bulk alloys. The antiferromagnetism of these materials has both spin ordering transitions and spin orienting transitions. The objectives include the study of exchange-inversion materials and the interface of these materials with ferromagnets. Our aim is to formulate a complete understanding of the magnetic ordering in these materials, as well as developing an understanding of how the spin structure is modified through contact with a ferromagnetic material at the interface. The ultimate goal is to develop the ability to tune the phase diagram of the materials to produce layered structures with tunable magnetic properties. The alloy systems that we will study have a degree of complexity and richness of magnetic phases that requires the use of the advanced tools offered by the DOE-operated national laboratory facilities, such as neutron and x-ray scattering to measure spin ordering, spin orientations, and element-specific magnetic moments. We plan to contribute to DOE’s mission of producing “Materials by Design” with properties determined by alloy composition and crystal structure. We have developed the methods for fabricating and have performed neutron diffraction experiments on some of the most interesting phases, and our work will serve to answer questions raised about the element-specific magnetizations using the magnetic x-ray dichroism techniques and interface magnetism in layered structures

  14. Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

    KAUST Repository

    Wan, Yi

    2017-12-19

    Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

  15. Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy.

    Science.gov (United States)

    Yang, Junyou; Zhu, Wen; Gao, Xianhui; Bao, Siqian; Fan, Xian; Duan, Xingkai; Hou, Jie

    2006-03-16

    A nanocrystalline Sb2Te3 VA-VIA group compound thin film was grown via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behavior of Te and Sb on Pt, Te on Sb-covered Pt, and Sb on Te-covered Pt was studied by methods of cyclic voltammetry, anode potentiodynamic scanning, and coulometry. A steady deposition of the Sb2Te3 compound could be attained after negatively stepped adjusting of the UPD potentials of Sb and Te on Pt in each of the first 40 depositing cycles. The structure of the deposit was proven to be the Sb2Te3 compound by X-ray diffraction. The 2:3 stoichiometric ratio of Sb to Te was verified by EDX quantitative analysis, which is consistent with the result of coulometric analysis. A nanocystalline microstructure was observed for the Sb2Te3 deposits, and the average grain size is about 20 nm. Cross-sectional SEM observation shows an interface layer about 19 nm in thickness sandwiched between the Sb2Te3 nanocrystalline deposit and the Pt substrate surface. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy and it is blueshifted in comparison with that of the bulk Sb2Te3 single crystal because of its nanocrystalline microstructure.

  16. Effect of ion-implantation doping and heat treatment of the structural properties of GaAs epitaxial layers

    International Nuclear Information System (INIS)

    Sorokin, I.N.; Klebanova, N.A.; Avramenko, N.N.; Terent'eva, G.N.; Nosikov, S.V.; Chernyaev, A.V.; Rodina, A.S.

    1988-01-01

    We attempted to reveal electrically active defects of the cluster type in ion-doped films by means of selective chemical etching and to consider the influence of heat treatment on the generation and decay of these imperfections in implanted and epitaxial layers of gallium arsenide. Doping of gallium arsenide by means of ion implantation is observed to generate clusters of radiation defects, whose density reaches 10 7 cm -2 . Heat treatment of both ion-implanted and epitaxial layers at 700 0 C causes the clusters to decay and the carrier concentration to rise. We have discovered a correlation between the dependences of the defect density and the majority-carrier concentration at an annealing temperature of 650 0 C, confirming the nature of the imperfections observed: inhomogeneities - revealed by a Spirtle solution in the form of cupola-shaped etch figures - consisting of clusters of point defects formed by gettering of impurity ions on vacancy clusters

  17. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    International Nuclear Information System (INIS)

    Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

    1994-01-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

  18. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  19. Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

    1990-08-10

    Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

  20. Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Cerio, Frank

    2013-09-14

    The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

  1. Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

    Directory of Open Access Journals (Sweden)

    Yue Wang

    2017-05-01

    Full Text Available BiFeO3/TiN/MgO (001 films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001 [100]//TiN (001 [100]//MgO (001 [100] and rhombohedral-BiFeO3 (001 [100]//TiN (001 [100]//MgO (001 [100]. Besides, an oxidized TiN layer (∼ 20 nm has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

  2. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

    International Nuclear Information System (INIS)

    Zhi-Qiang, Zhou; Ying-Qiang, Xu; Rui-Ting, Hao; Bao, Tang; Zheng-Wei, Ren; Zhi-Chuan, Niu

    2009-01-01

    We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450° C and 2.1 nm, respectively. A rms surface roughness of 0.67nm over 10 × 10 μm 2 is achieved as a 0.5μm GaSb film is grown under optimized conditions

  3. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  4. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    International Nuclear Information System (INIS)

    Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

    2016-01-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  5. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Claudel, A., E-mail: arnaud.claudel@grenoble-inp.org [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Fellmann, V. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Gélard, I. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Coudurier, N. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Sauvage, D. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Balaji, M. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Crystal Growth Center, Anna University, Chennai 600025 (India); and others

    2014-12-31

    Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a susceptor heated by induction. The reactants used are ammonia and aluminum chlorides in situ formed via hydrogen chloride reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence and Raman spectroscopies. The influence of the V/III ratio in the gas phase, from 1.5 to 15, on growth rate, surface morphology, roughness and crystalline quality is investigated in order to increase the quality of thin epitaxial AlN layers grown at high temperature. Typical growth rates of around 0.45 μm/h were obtained for such thin epitaxial AlN layers. The growth rate was unaffected by the V/III ratio. An optimum for roughness, crystalline quality and optical properties seems to exist at V/III = 7.5. As a matter of fact, for a V/III ratio of 7.5, best root mean square roughness and crystalline quality — measured on 0002 symmetric reflection — as low as 6.9 nm and 898 arcsec were obtained, respectively. - Highlights: • Growth of thin epitaxial AlN layers by high temperature hydride vapor phase epitaxy • Influence of V/III ratio on growth rate, morphology and crystalline quality • The effect of surface morphology on strain state and crystal quality is established.

  6. Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

    Science.gov (United States)

    Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

    2017-07-01

    This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

  7. Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bessolov, V.N. [Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation); Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); Karpov, D.V. [St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); University of Eastern Finland, P.O. Box 111, Joensuu, 80101 (Finland); Konenkova, E.V. [Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation); Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); Lipovskii, A.A. [St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation); Osipov, A.V. [Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101 (Russian Federation); Redkov, A.V. [Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation); and others

    2016-05-01

    A new approach to the pendeo-epitaxy of elastically-unstrained AlN films is developed. The AlN films are grown using chloride-hydride vapor phase epitaxy (HVPE) on a silicon substrate with specially synthesized and shaped buffer layer of nano-SiC (NSiC). This NSiC epitaxial layer is grown using a new technique based on the substitution of a part of silicon atoms by carbon ones in a 100–110 nm thick subsurface layer of the silicon substrate. The 2D array of ~ 200 nm in diameter wells with the depth of ~ 70 nm that is less than the NSiC layer thickness is formed on the NSiC surface using electron beam lithography followed by reactive ion etching, the period of the array is of 400 nm. In a single HVPE process we grew ~ 20 μm thick AlN film both on the shaped and smooth regions of the prepared substrate. The AlN films are examined with reflection high energy electron diffraction, X-ray diffractometry, Raman spectroscopy and scanning electron microscopy. We use the results of these measurements to compare residual elastic stresses in the AlN film grown on the shaped and smooth regions of the substrate. The film on the shaped part of the substrate is elastically-unstrained contrary to the smooth part where elastic stresses result in the formation of a textured AlN layer. The model of the AlN growth on shaped SiC/Si substrates prepared using the atomic substitution technique is proposed. - Highlights: • A new method for chloride-hydride vapor phase pendeo-epitaxy of AlN is proposed • Unstrained AlN layer is grown on a Si substrate with a nanoprofiled SiC buffer • SiC made by substitution of atoms is well suited for the growth of AlN • Dissolution of pores in silicon beneath the nano-SiC is revealed.

  8. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  9. Epitaxial TiO 2/SnO 2 core-shell heterostructure by atomic layer deposition

    KAUST Repository

    Nie, Anmin

    2012-01-01

    Taking TiO 2/SnO 2 core-shell nanowires (NWs) as a model system, we systematically investigate the structure and the morphological evolution of this heterostructure synthesized by atomic layer deposition/epitaxy (ALD/ALE). All characterizations, by X-ray diffraction, high-resolution transmission electron microscopy, selected area electron diffraction and Raman spectra, reveal that single crystalline rutile TiO 2 shells can be epitaxially grown on SnO 2 NWs with an atomically sharp interface at low temperature (250 °C). The growth behavior of the TiO 2 shells highly depends on the surface orientations and the geometrical shape of the core SnO 2 NW cross-section. Atomically smooth surfaces are found for growth on the {110} surface. Rough surfaces develop on {100} surfaces due to (100) - (1 × 3) reconstruction, by introducing steps in the [010] direction as a continuation of {110} facets. Lattice mismatch induces superlattice structures in the TiO 2 shell and misfit dislocations along the interface. Conformal epitaxial growth has been observed for SnO 2 NW cores with an octagonal cross-section ({100} and {110} surfaces). However, for a rectangular core ({101} and {010} surfaces), the shell also derives an octagonal shape from the epitaxial growth, which was explained by a proposed model based on ALD kinetics. The surface steps and defects induced by the lattice mismatch likely lead to improved photoluminescence (PL) performance for the yellow emission. Compared to the pure SnO 2 NWs, the PL spectrum of the core-shell nanostructures exhibits a stronger emission peak, which suggests potential applications in optoelectronics. © The Royal Society of Chemistry 2012.

  10. Selective growth of Ge1‑ x Sn x epitaxial layer on patterned SiO2/Si substrate by metal–organic chemical vapor deposition

    Science.gov (United States)

    Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have investigated the selective growth of a Ge1‑ x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal–organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1‑ x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1‑ x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1‑ x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1‑ x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1‑ x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

  11. Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer

    Science.gov (United States)

    Englhard, M.; Reuters, B.; Baur, J.; Klemp, C.; Zaumseil, P.; Schroeder, T.; Skibitzki, O.

    2017-06-01

    Phosphide-based thin-film light-emitting diodes (TF-LEDs) lattice-matched to GaAs are well established in optoelectronics in the wavelength range between 550 and 650 nm. In this work, we investigate the impact of oxidized AlAs to overlying phosphide-based pseudomorphically grown epitaxial structures. Oxidation of a buried AlAs sacrificial layer allows the separation of the grown TF-LED epitaxy from its substrates and enables an oxidation lift-off process. To evaluate the strain effect of progressing oxidation on the structure of the chip, we perform high-resolution x-ray diffraction analysis on as-grown, mesa-structured, semi-oxidized, and completely laterally oxidized chips. At each state, a pseudomorphic phosphide-based InAlP layer is found. The InAlP layer exhibits a tensile out-of-plane strain of approximately 0.20% and a compressive in-plane strain of approx. -0.19%. Additionally, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, and μ-photoluminescence were used for investigation of the boundary zone of the oxidation front of AlAs, the interfaces between phosphide-based semiconductors (InAlP/InGaAlP) and oxidized amorphous AlAs and the light emission of InGaAlP multiple quantum wells.

  12. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Yatskiv, Roman

    2013-01-01

    Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  13. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  14. Texture and microstructure analysis of epitaxial oxide layers prepared on textured Ni-12wt%Cr tapes

    Energy Technology Data Exchange (ETDEWEB)

    Huehne, R; Kursumovic, A; Tomov, R I; Glowacki, B A [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Holzapfel, B [Institut fuer Festkoerper- und Werkstoffforschung, Helmholtzstrasse 20, 01069 Dresden (Germany); Evetts, J E [Department of Materials Science and IRC in Superconductivity, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2003-05-07

    Oxide layers for the preparation of YBa{sub 2}Cu{sub 3}O{sub 7-x} coated conductors were grown on highly textured Ni-12wt%Cr tapes in pure oxygen using surface oxidation epitaxy at temperatures between 1000 deg. C and 1300 deg. C. Microstructural investigations revealed a layered oxide structure. The upper layer consists mainly of dense cube textured NiO. This is followed by a porous layer containing NiO and NiCr{sub 2}O{sub 4} particles. A detailed texture analysis showed a cube-on-cube relationship of the NiCr{sub 2}O{sub 4} spinel to the metal substrate. Untextured Cr{sub 2}O{sub 3} particles in a nickel matrix were found in a third layer arising from internal oxidation of the alloy. A high surface roughness and mechanical instability of the oxide were observed, depending on oxidation temperature and film thickness. However, mechanically stable oxide layers have been prepared using an additional annealing step in a protective atmosphere. Additionally, mechanical polishing or a second buffer layer, which grows with a higher smoothness, may be applied to reduce the surface roughness for coated conductor applications.

  15. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Isom Hilmi

    2017-05-01

    Full Text Available An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered chalcogenide material with van-der-Waals (vdW epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111 substrates by pulsed laser deposition (PLD. The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.

  16. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  17. Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

    Science.gov (United States)

    Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

    2018-05-01

    The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

  18. GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique

    Science.gov (United States)

    Wetzel, C.; Volm, D.; Meyer, B. K.; Pressel, K.; Nilsson, S.; Mokhov, E. N.; Baranov, P. G.

    1994-08-01

    We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm-3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.

  19. Depth-dependent phase change in Gd{sub 2}O{sub 3} epitaxial layers under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mejai, N.; Debelle, A., E-mail: aurelien.debelle@u-psud.fr; Thomé, L.; Sattonnay, G. [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS, Université Paris-Saclay, Bâtiment 108, 91405 Orsay Cedex (France); Gosset, D. [CEA-Saclay, DEN-DMN-SRMA-LA2M, Gif/Yvette (France); Boulle, A. [Science des Procédés Céramiques et de Traitements de Surface CNRS UMR 7315, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges (France); Dargis, R.; Clark, A. [Translucent Inc., 952 Commercial St., Palo Alto, California 94303 (United States)

    2015-09-28

    Epitaxial Gd{sub 2}O{sub 3} thin layers with the cubic structure were irradiated with 4-MeV Au{sup 2+} ions in the 10{sup 13}–10{sup 15} cm{sup −2} fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au{sup 2+} ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.

  20. Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

    Science.gov (United States)

    Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

    2017-10-01

    Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

  1. Optical Properties of Epitaxial Al{sub x}In{sub 1-x}Sb Alloy Layers

    Energy Technology Data Exchange (ETDEWEB)

    Komkov, O. S., E-mail: okomkov@yahoo.com [St. Petersburg State Electrotechnical University LETI (Russian Federation); Semenov, A. N. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Firsov, D. D. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Meltser, B. Ya.; Solov' ev, V. A.; Popova, T. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Pikhtin, A. N. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2011-11-15

    Optical studies of unstrained narrow-gap Al{sub x}In{sub 1-x}Sb semiconductor alloy layers are carried out. The layers are grown by molecular-beam epitaxy on semi-insulating GaAs substrates with an AlSb buffer. The composition of the alloys is varied within the range of x = 0-0.52 and monitored by electron probe microanalysis. The band gap E{sub g} is determined from the fundamental absorption edge with consideration for the nonparabolicity of the conduction band. The refined bowing parameter in the experimental dependence E{sub g}(x) for the Al{sub x}In{sub 1-x}Sb alloys is 0.32 eV. This value is by 0.11 eV smaller than the commonly referred one.

  2. Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure

    Science.gov (United States)

    Pandey, Raghvendra K. (Inventor); Raina, Kanwal K. (Inventor); Solayappan, Narayanan (Inventor)

    1995-01-01

    A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

  3. Impact of rare earth elements on the properties of InP-based epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Procházková, Olga; Grym, Jan; Zavadil, Jiří; Žďánský, Karel; Kopecká, M.

    2005-01-01

    Roč. 1, č. 1 (2005), s. 187-187 ISSN 1336-7242. [Zjazd chemických spoločností /57./. Tatranské Matliare, 04.09.2005-08.09.2005] R&D Projects: GA ČR(CZ) GA102/03/0379 Institutional research plan: CEZ:AV0Z20670512 Keywords : epitaxial growth * semiconductors * rare earth compounds Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  4. Band lineup in GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

    Science.gov (United States)

    Ji, G.; Agarwala, S.; Huang, D.; Chyi, J.; Morkoc, H.

    1988-11-01

    GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs(1-x)Sbx/GaAs system. The method for determining the band offset Q(vh) is discussed in this strained-layer system.

  5. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  6. Epitaxial growth of matched metallic ErP0.6As0.4 layers on GaAs

    International Nuclear Information System (INIS)

    Guivarc'h, A.; Le Corre, A.; Gaulet, J.; Guenais, B.; Minier, M.; Ropars, G.; Badoz, P.A.; Duboz, J.Y.

    1990-01-01

    Successful growth of (001)ErP 0.6 As 0.4 single crystal film on (001) GaAs has been demonstrated. The epitaxial metallic layers reproducibly showed lattice mismatch below 5 10 -4 . This is, to the authors' knowledge, the first report of a stable, epitaxial and lattice-matched metal/compound semiconductor heterostructure. The ErP 0.6 As 0.4 /n-GaAs diodes yielded excellent I-V characteristics with an ideality factor of 1.1 and barrier height of 0.88 eV. For a 240 Angstrom- thick film, metallic behavior was observed with resistivities of 25 and 86 μΩcm at 1.5 K and room temperature, respectively. As the other Er compounds ErP, ErAs, ErSb and ErSi 2 , ErP 0.6 As 0.4 presents an abrupt drop in resistivity in the vicinity of the liquid helium temperature, due to a paramagnetic to antiferromagnetic phase transition

  7. Epitaxial Growth of MgxCa1-xO on GaN by Atomic Layer Deposition.

    Science.gov (United States)

    Lou, Xiabing; Zhou, Hong; Kim, Sang Bok; Alghamdi, Sami; Gong, Xian; Feng, Jun; Wang, Xinwei; Ye, Peide D; Gordon, Roy G

    2016-12-14

    We demonstrate for the first time that a single-crystalline epitaxial Mg x Ca 1-x O film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched Mg x Ca 1-x O/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice parameter of this ternary oxide nearly obeys Vegard's law. An atomically sharp interface from cross-sectional transmission electron microscopy (TEM) confirmed the high quality of the epitaxy. High-temperature capacitance-voltage characterization showed that the film with composition Mg 0.25 Ca 0.75 O has the lowest interfacial defect density. With this optimal oxide composition, a Mg 0.25 Ca 0.75 O/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility (MOS-HEMT) device was fabricated. An ultrahigh on/off ratio of 10 12 and a near ideal SS of 62 mV/dec were achieved with this device.

  8. Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

    Energy Technology Data Exchange (ETDEWEB)

    Hermann, Martin

    2009-04-27

    In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

  9. Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers

    CERN Document Server

    Nossarzhevska, E; Brzozowski, A

    1999-01-01

    High-resistivity, thick silicon epitaxial layers, deposited on Czochralski silicon (CZ Si) substrate were used as a material for test diodes. Resistivity profile as a function of depth and deep-level spectra were measured by spreading resistance method and deep-level transient spectroscopy (C-DLTS) on non-irradiated and proton irradiated mesa diodes. A deep level with activation energy E sub c -0.52 eV, attributed to V sub 2 O defect, dominates in the non-irradiated diodes. After irradiation two levels, E sub c -0.38 and E sub c -0.45 eV, related to divacancies and the level E sub c -0.17 eV corresponding to VO complex are distinguished.

  10. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  11. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

    2018-04-01

    We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

  12. Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

    International Nuclear Information System (INIS)

    Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

    2008-01-01

    We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

  13. Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2008-01-01

    Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

  14. Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Y. H. Lin

    2015-10-01

    Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

  15. Determination of the nitrogen concentration in epitaxial layers of GaAs /SUB 1-x/ p /SUB x/ by the optical method

    International Nuclear Information System (INIS)

    Lupal, M.V.; Klot, B; Nikhter, K.; Pikhtin, A.N.; Trapp, M.

    1986-01-01

    This paper determines the dependence of the cross section for absorption in the A /SUB N/ line of a bound exciton on the nitrogen content in the solid solution GaAs /SUB 1-x/ P /SUB x/ by comparing the results of optical measurements with the data from secondary ionic mass spectrometry, and these results are used to study the effect of technological factors on the nitrogen concentration epitaxial layers obtained by the gas-transport method. Doping was carried out with nitrogen by injecting ammonia into the reactor zone; the partial pressure of the ammonia was varied from 1 to 25 kPa. Aside from nitrogen, the authors doped the layers with shallow donor Te. It is established that the solubility of nitrogen in the solid solution decreases as the arsenic content increases when the convenient optical method for determining the nitrogen concentration in epitaxial GaAs /SUB 1-x/ P /SUB x/ layers is used

  16. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

    NARCIS (Netherlands)

    Sakic, A.; Scholtes, T.L.M.; De Boer, W.B.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.

    2011-01-01

    An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely

  17. Quantitative Evaluation of Strain in Epitaxial 2H AlN Layers

    International Nuclear Information System (INIS)

    Nader, N.; Pezoldt, J.

    2011-01-01

    To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer. (author)

  18. Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

    International Nuclear Information System (INIS)

    Bertoncini, P.; Wetzel, P.; Berling, D.; Mehdaoui, A.; Loegel, B.; Gewinner, G.; Poinsot, R.; Pierron-Bohnes, V.

    2001-01-01

    The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe 3 Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (≥4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8-10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K 4 eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Neel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (≤25 ML) films

  19. Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

    Science.gov (United States)

    Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

    2017-05-01

    III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

  20. Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Wu, L.L.; Le, L.C.; Li, L.; Chen, P.; Liu, Z.S. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhu, J.J.; Wang, H.; Zhang, S.M. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A dual AlN buffer layer structure is proposed to grow AlN films. Black-Right-Pointing-Pointer AlN films could be improved obviously by using the dual AlN buffer layer. Black-Right-Pointing-Pointer The physical mechanism are discussed. - Abstract: A dual AlN buffer layer structure, including an isolated layer and a nucleation layer, is proposed to improve the growth of AlN films on sapphire substrate by metal organic chemical vapor deposition. This method is aimed to weaken the negative nitridation effect and improve lateral growth condition in the initial growth stage. It is found that suitably increasing the thickness of the nucleation layer is in favor of a better structural quality of the AlN film. An examination of surface morphology by atomic force microscopy suggests that the thicker the dual AlN buffer layer, the rougher the surface, and a higher quality of AlN epilayer is resulted.

  1. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

    International Nuclear Information System (INIS)

    Hao Ruiting; Deng Shukang; Shen Lanxian; Yang Peizhi; Tu Jielei; Liao Hua; Xu Yingqiang; Niu Zhichuan

    2010-01-01

    GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

  2. Aqueous phase synthesis of upconversion nanocrystals through layer-by-layer epitaxial growth for in vivo X-ray computed tomography

    KAUST Repository

    Li, Feifei

    2013-05-21

    Lanthanide-doped core-shell upconversion nanocrystals (UCNCs) have tremendous potential for applications in many fields, especially in bio-imaging and medical therapy. As core-shell UCNCs are mostly synthesized in organic solvents, tedious organic-aqueous phase transfer processes are usually needed for their use in bio-applications. Herein, we demonstrate the first example of one-step synthesis of highly luminescent core-shell UCNCs in the "aqueous" phase under mild conditions using innocuous reagents. A microwave-assisted approach allowed for layer-by-layer epitaxial growth of a hydrophilic NaGdF4 shell on NaYF4:Yb, Er cores. During this process, surface defects of the nanocrystals could be gradually passivated by the homogeneous shell deposition, resulting in obvious enhancement in the overall upconversion emission efficiency. In addition, the up-down conversion dual-mode luminescent NaYF4:Yb, Er@NaGdF4:Ce, Ln (Eu, Tb, Sm, Dy) nanocrystals were also synthesized to further validate the successful formation of the core-shell structure. More significantly, based on their superior solubility and stability in water solution, high upconversion efficiency and Gd-doped predominant X-ray absorption, the as-prepared NaYF4:Yb, Er@NaGdF4 core-shell UCNCs exhibited high contrast in in vitro cell imaging and in vivo X-ray computed tomography (CT) imaging, demonstrating great potential as multiplexed luminescent biolabels and CT contrast agents.

  3. p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

    International Nuclear Information System (INIS)

    Jakomin, Roberto; Beaudoin, Gregoire; Gogneau, Noelle; Lamare, Bruno; Largeau, Ludovic; Mauguin, Olivia; Sagnes, Isabelle

    2011-01-01

    We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology, the structural and the electrical properties of the Ge layers. The controlled growth of p and n doped Ge layers opens the possibility to realize totally epitaxially grown Ge diodes with improved performances, for example, for solar cell applications.

  4. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  5. GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

    Energy Technology Data Exchange (ETDEWEB)

    Simon, John; Schulte, Kevin L.; Young, David L.; Haegel, Nancy M.; Ptak, Aaron J.

    2016-01-01

    The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged as a low-cost, high-throughput alternative to conventional metal- organic vapor-phase epitaxy (MOVPE) growth of high-efficiency solar cells. Previously, we demonstrated unpassivated HVPEgrown GaAs p-n junctions with good quantum efficiency and high open-circuit voltage (Voc). In this work, we demonstrate the growth of GaInPby HVPE for use as a high-quality surface passivation layer to GaAs solar cells. Solar cells grown with GaInP window layers show significantly improved quantum efficiency compared with unpassivated cells, increasing the short-circuit current (JSC) of these low-cost devices. These results show the potential of low-cost HVPE for the growth of high-quality III-V devices.

  6. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    to nitrogen incorporation from the growth ambient while nitrogen doping from the source yielded better results regarding quantum efficiency. To investigate the presence of different types of defects in f-SiC layers and their impact on the fluorescent properties of f-SiC, this study will focus on defect...... characterization of f-SiC layers grown under different process conditions, especially different growth ambient and using differently doped source material. The results may help to identify critical process parameters and reduce the concentration of relevant defects....

  7. Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

    2004-01-01

    Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

  8. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S

    1998-01-01

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  9. Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

    Science.gov (United States)

    Gu, Zhi-Gang; Chen, Shan-Ci; Fu, Wen-Qiang; Zheng, Qingdong; Zhang, Jian

    2017-03-01

    Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO 2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO 2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu 3 (BTC) 2 , BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO 2 -based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.

  10. Molecular Beam Epitaxial Growth and Characterization of Graphene and Hexagonal Boron Nitride Two-Dimensional Layers

    Science.gov (United States)

    Zheng, Renjing

    Van der Waals (vdW) materials (also called as two-dimensional (2D) material in some literature) systems have received extensive attention recently due to their potential applications in next-generation electronics platform. Exciting properties have been discovered in this field, however, the performance and properties of the systems rely on the materials' quality and interface significantly, leading to the urgent need for scalable synthesis of high-quality vdW crystals and heterostructures. Toward this direction, this dissertation is devoted on the study of Molecular Beam Epitaxy (MBE) growth and various characterization of vdW materials and heterostructures, especially graphene and hexagonal boron nitride (h-BN). The goal is to achieve high-quality vdW materials and related heterostructures. There are mainly four projects discussed in this dissertation. The first project (Chapter 2) is about MBE growth of large-area h-BN on copper foil. After the growth, the film was transferred onto SiO2 substrate for characterization. It is observed that as-grown film gives evident h-BN Raman spectrum; what's more, h-BN peak intensity and position is dependent on film thickness. N-1s and B-1s XPS peaks further suggest the formation of h-BN. AFM and SEM images show the film is flat and continuous over large area. Our synthesis method shows it's possible to use MBE to achieve h-BN growth and could also pave a way for some unique structure, such as h-BN/graphene heterostructures and doped h-BN films by MBE. The second project (Chapter 3) is focused on establishment of grapehene/h-BN heterostructure on cobalt (Co) film. In-situ epitaxial growth of graphene/h-BN heterostructures on Co film substrate was achieved by using plasma-assisted MBE. The direct graphene/h-BN vertical stacking structures were demonstrated and further confirmed by various characterizations, such as Raman spectroscopy, SEM, XPS and TEM. Large area heterostructures consisting of single- /bilayer graphene and

  11. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

    Directory of Open Access Journals (Sweden)

    Foad Ghasemi

    2017-03-01

    Full Text Available The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD-grown samples.

  12. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Wegscheider, W. [Walter Schottky Institut, Garching (Germany); Cerva, H. [Siemens AG, Research Lab., Muenchen (Germany)

    1993-05-01

    The relaxation behavior of short-period Si/Ge superlattices and Si{sub x}Ge{sub 1-x} alloy layers under compressive and tensile strain field is compared experimentally by means of transmission electron microscopy as well as theoretically on ethebasis of a half-loop dislocation nucleation mode. It was found that misfit dislocations in tensily strained layers grown on Ge(001) substrates are imperfect and of the 90{degrees} Shockley type provided some critical misfit f{sub c} is exceeded. Subsequent nucleation and glide of these partial dislocations on adjacent (111) glide planes leads to the formation of stacking faults and microtwins. In the low misfit regime (flayers which experience a compressive strain field within the (001) growth plane are generally of the 60{degrees} type. In this case the critical thickness for coherent growth is found to be substantially enlarged with respect to the inverse strain situation where microtwin formation occurs. 30 refs., 8 figs.

  13. The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy.

    Science.gov (United States)

    1987-06-01

    of excess incident atoms. Among the materials which have been deposited by ALE to date are ZnS, ZnSe, GaAs, AlI._Ga As, SnTe, GaP, SnO2 , A12 0 3...uppermost layer ,- of the film, excess incident atoms that do not form A-B bonds in the film are allowed to re-evaporate (by making use of the larger...were subsequently polished with 0.1 um diamond paste and then oxidized at 1200°C in flowing dry oxygen for 1.5 h to consume the 50 nm of surface which

  14. ZnTe-ZnO core-shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition.

    Science.gov (United States)

    Janik, E; Wachnicka, A; Guziewicz, E; Godlewski, M; Kret, S; Zaleszczyk, W; Dynowska, E; Presz, A; Karczewski, G; Wojtowicz, T

    2010-01-08

    ZnTe-ZnO core-shell radial heterostructures were grown using a new method of combining molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Zinc telluride nanowires (core) were grown on a GaAs substrate using gold catalyzed vapor-liquid-solid mechanism. An atomic layer deposition technique using diethyl zinc and deionized water as precursors was applied for zinc oxide shell formation. The core-shell ZnTe-ZnO heterostructures thus obtained were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction and photoluminescence measurements.

  15. Photoluminescence spectra of CdTe epitaxial layers prepared by chemical vapor deposition from organometallic compounds on GaAs substrate

    International Nuclear Information System (INIS)

    Batmanov, S.M.; Liverko, V.N.; Moiseev, A.N.; Sennikov, P.G.; Shakarov, M.A.

    1989-01-01

    Spectra of low-temperature photoluminescence (LTP) of CdTe epitaxial layers on GaAs, prepared according to reaction between dimethyl cadmium and diethyl tellurium of different degrees of purity, have been investigated. It is shown that LPT spectra are guite sensitive to the degree of purity of the organometallic compounds (OMC), hence, when passing to less pure OMC in LTP spectra of the layers free exciton recombination lines are not resolved, recombination lines of bound excitons are broadened, and in the long-wave region a band of ''self-activated'' luminescence due to recombination of the complex donor-cadmium vacancy is recorded

  16. Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Wahchung; Elliman, R.G.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1993-12-31

    The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.

  17. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-07-26

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

  18. Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

    Science.gov (United States)

    Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

    2018-04-01

    Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

  19. Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovskiy, V. I.; Krivobok, V. S., E-mail: krivobok@lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Kuznetsov, P. I.; Nikolaev, S. N.; Onistchenko, E. E.; Pruchkina, A. A.; Temiryazev, A. G. [Russian Academy of Sciences, Kotel’nikov Institute of Radio-Engineering and Electronics (Russian Federation)

    2016-05-15

    Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 10{sup 8} to 10{sup 9} cm{sup –2} are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H{sub 2} atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.

  20. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

    Directory of Open Access Journals (Sweden)

    Tománek P.

    2013-05-01

    Full Text Available The objective of the study is a growth of SiC/(SiC1−x(AlNx structures by fast sublimation epitaxy of the polycrystalline source of (SiC1−x(AlNx and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes. The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

  1. Orientation-dependent physical properties of layered perovskite La1.3Sr1.7Mn2O7 epitaxial thin films

    Science.gov (United States)

    Niu, Li-Wei; Guo, Bing; Chen, Chang-Le; Luo, Bing-Cheng; Dong, Xiang-Lei; Jin, Ke-Xin

    2017-04-01

    In this paper, the resistivity and magnetization of orientation-engineered layered perovskite La1.3Sr1.7Mn2O7 epitaxial thin films have been investigated. Epitaxial thin films were deposited on single-crystalline LaAlO3 (LAO) (001), (110) and (111) substrates by pulse laser deposition (PLD) technique. It is found that only the (100)-oriented thin film performs insulator behavior, whereas the (110) and (111)-oriented thin films exhibit obvious metal-insulator transition at 70 K and between 85 and 120 K, respectively. Moreover, the same spin freezing temperature and different spin-glass-like transition temperatures have been observed in various oriented films. The observed experimental results were discussed according to the electron-transport mechanism and spin dynamics.

  2. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  3. Characterization of surface electrochemical reactions used in electrochemical atomic layer epitaxy and digital etching

    Science.gov (United States)

    Sorenson, Thomas Allen

    Surface analytical techniques have been used to characterize electrochemical reactions to be used in semiconductor processing technologies. Studies have been performed using UHV-EC methodology to determine conditions for the surface limited dissolution of CdTe(100). Electrochemical conditions were identified which resulted in the reduction of the top layer of tellurium atoms, leaving behind a cadmium enriched surface. Attempts to find an electrochemical potential for the oxidative dissolution of the cadmium surface were complicated by the simultaneous oxidation of the compound CdTe. In situ scanning tunneling microscopy has also been used to characterize the formation of tellurium atomic layers formed on Au(111) and Au(100) by underpotential deposition. On Au(100), the following sequence of surface structures was observed prior to bulk electrodeposition: a p(2x2), a (2x✓10), a (2x4), and a (✓2x✓5). The transitions between these structures was observed by STM and mechanisms for the phase transitions are presented. The results are correlated to UHV-EC studies of tellurium UPD on Au(100). On Au(111), the following sequence of structures was observeḑ: a (✓3 x✓3), a (✓7x✓13), and a (3x3). The (✓3x✓3) was shown to exist with a network of domain walls, forming long range triangular and diamond shaped superstructures. Conversion of the (✓3x✓3) to higher coverage structure resulted in roughening of the underlying Au surface and a mechanism is hypothesized to explain this transition. The STM results are also correlated to low energy electron diffraction (LEED) results obtained by UHV-EC studies. The surface structures formed by reductive UPD of the chalcogenide elements and Se on both Au(100) and Au(111) are compared. Both elements initially resulted in structures consisting of isolated atoms separated by distances close to the reported van der Waals diameter. Higher coverage structures resulted in interatomic chalcogenide bonding and the structures

  4. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.

    Science.gov (United States)

    Lee, Seung Min; Yum, Jung Hwan; Yoon, Seonno; Larsen, Eric S; Lee, Woo Chul; Kim, Seong Keun; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Bielawski, Christopher W; Oh, Jungwoo

    2017-12-06

    We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO 2 . As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.

  5. Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

    Science.gov (United States)

    Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul

    2018-04-01

    The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

  6. Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

    KAUST Repository

    Li, Henan

    2017-07-06

    Recently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.

  7. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

    Science.gov (United States)

    Fanton, M. A.; Weiland, B. E.; Redwing, J. M.

    2008-08-01

    The halide chemical vapor deposition process for single-crystal SiC achieves growth rates over 200 μm/h at temperatures approaching 2000 °C. This work examines the conditions required to produce 80-100-μm-thick heavily p-type doped layers on 4H-SiC substrates by using boron trichloride and trimethylaluminum at high growth temperatures. Dopant incorporation as a function of the dopant concentration in the growth ambient was evaluated by secondary ion mass spectrometry (SIMS). The maximum Al and B concentrations achieved were 5×10 17 and 4×10 19 atoms/cm 3, respectively. Low Al incorporation efficiency was attributed to the high growth temperature and reaction of Al with Cl to form volatile chloride species. Aluminum incorporation was consistent with incorporation as a simple solid solution, while B incorporation exhibited a much stronger interaction with the SiC matrix. Aluminum incorporation was found to be an order of magnitude higher on the Si-face of the substrate, while B incorporation was essentially the same on both the Si-face and C-face. Aluminum incorporation was increased by a factor of five as the C/Si ratio increased from 0.42 to 0.86, while boron incorporation showed no sensitivity to the C/Si ratio. The B concentrations measured by SIMS were of the same magnitude as the net acceptor concentrations estimated from capacitance-voltage measurements, indicating a significant fraction of the B dopant was activated.

  8. Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets.

    Science.gov (United States)

    Huang, Xiao; Zeng, Zhiyuan; Bao, Shuyu; Wang, Mengfei; Qi, Xiaoying; Fan, Zhanxi; Zhang, Hua

    2013-02-05

    Compared with the conventional deposition techniques used for the epitaxial growth of metallic structures on a bulk substrate, wet-chemical synthesis based on the dispersible template offers several advantages, including relatively low cost, high throughput, and the capability to prepare metal nanostructures with controllable size and morphology. Here we demonstrate that the solution-processable two-dimensional MoS(2) nanosheet can be used to direct the epitaxial growth of Pd, Pt and Ag nanostructures at ambient conditions. These nanostructures show the major (111) and (101) orientations on the MoS(2)(001) surface. Importantly, the Pt-MoS(2) hybrid nanomaterials exhibit much higher electrocatalytic activity towards the hydrogen evolution reaction compared with the commercial Pt catalysts with the same Pt loading. We believe that nanosheet-templated epitaxial growth of nanostructures via wet-chemical reaction is a promising strategy towards the facile and high-yield production of novel functional materials.

  9. Buffer-layer enhanced crystal growth of BaB{sub 6} (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Tsuchimine, Nobuo; Kobayashi, Susumu [Toshima Manufacturing Company Limited, 1414 Shimonomoto, Higashimatsuyama-shi, Saitama 355-0036 (Japan); Saeki, Kazuhiko; Takezawa, Nobutaka [Department of Materials Technology, Industrial Technology Center of Tochigi Prefecture, 367-1 Karinuma, Utsunomiya-shi, Tochigi 321-3224 (Japan); Mitsuhashi, Masahiko; Kaneko, Satoru [Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435 (Japan); Yoshimoto, Mamoru, E-mail: yoshimoto.m.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Patent Attorney, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-02-01

    Crystalline BaB{sub 6} (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB{sub 6} (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB{sub 6} (1 0 0)/SrB{sub 6} (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB{sub 6} thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB{sub 6} thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB{sub 6} epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 Multiplication-Sign 10{sup -1} {Omega} cm at room temperature.

  10. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  11. Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Fujikura, Hajime; Hayashi, Kentaro; Horikiri, Fumimasa; Narita, Yoshinobu; Konno, Taichiro; Yoshida, Takehiro; Ohta, Hiroshi; Mishima, Tomoyoshi

    2018-04-01

    In vertical GaN PN diodes (PNDs) grown entirely by metal–organic chemical vapor deposition (MOCVD), large current nonuniformity was observed. This nonuniformity was induced by macrosteps on the GaN surface through modulation of carbon incorporation into the n-GaN crystal. It was eliminated in a hybrid PND consisting of a carbon-free n-GaN layer grown by hydride vapor phase epitaxy (HVPE) and an MOCVD-regrown p-GaN layer. The hybrid PND showed a fairly low on-resistance (2 mΩ cm2) and high breakdown voltage (2 kV) even without a field plate electrode. These results clearly indicated the strong advantages of the HVPE-grown drift layer for improving power device performance, uniformity, and yield.

  12. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  13. Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan

    2017-01-03

    Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by the GaN overgrowth on ML-MoS2/c-sapphire using the plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N∗2N2*) and gallium (Ga) irradiation studies are employed to understand the individual effect on the doping levels of ML-MoS2, which is evaluated by micro-Raman and high-resolution X-Ray photoelectron spectroscopy (HRXPS) measurements. With both methods, p-type doping was attained and was verified by softening and strengthening of characteristics phonon modes E12gE2g1 and A1gA1g from Raman spectroscopy. With adequate N∗2N2*-irradiation (3 min), respective shift of 1.79 cm−1 for A1gA1g and 1.11 cm−1 for E12gE2g1 are obtained while short term Ga-irradiated (30 s) exhibits the shift of 1.51 cm−1 for A1gA1g and 0.93 cm−1 for E12gE2g1. Moreover, in HRXPS valence band spectra analysis, the position of valence band maximum measured with respect to the Fermi level is determined to evaluate the type of doping levels in ML-MoS2. The observed values of valance band maximum are reduced to 0.5, and 0.2 eV from the intrinsic value of ≈1.0 eV for N∗2N2*- and Ga-irradiated MoS2 layers, which confirms the p-type doping of ML-MoS2. Further p-type doping is verified by Hall effect measurements. Thus, by GaN overgrowth, we attained the building block of intrinsic GaN/p-type MoS2 heterojunction. Through this work, we have provided the platform for the realization of dissimilar heterostructure via monolithic approach.

  14. Deep levels in a-plane, high Mg-content Mg{sub x}Zn{sub 1-x}O epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre [Department of Physics, Faculty of Science, Atatuerk University, Erzurum 25240 (Turkey); 205 Dreese Laboratory, Department of Electrical and Computer Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210-1272 (United States); Tabares, G.; Hierro, A. [Dpto. Ingenieria Electronica and ISOM, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Arehart, A.; Ringel, S. A. [205 Dreese Laboratory, Department of Electrical and Computer Engineering, Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210-1272 (United States); Chauveau, J. M. [CRHEA-CNRS, 06560 Valbonne (France); University of Nice Sophia Antipolis, ParcValrose, 06102 Nice Cedex 2 (France)

    2012-12-15

    Deep level defects in n-type unintentionally doped a-plane Mg{sub x}Zn{sub 1-x}O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg{sub x}Zn{sub 1-x}O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E{sub c} - 1.4 eV, 2.1 eV, 2.6 V, and E{sub v} + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E{sub c} - 2.1 eV, E{sub v} + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E{sub v} + 0.3 eV and E{sub c} - 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E{sub v} + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E{sub c} - 1.4 eV and E{sub c} - 2.6 eV levels in Mg alloyed samples.

  15. Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties

    Science.gov (United States)

    Kaveev, Andrey K.; Bursian, Viktor E.; Krichevtsov, Boris B.; Mashkov, Konstantin V.; Suturin, Sergey M.; Volkov, Mikhail P.; Tabuchi, Masao; Sokolov, Nikolai S.

    2018-01-01

    Epitaxial layers of CoFeB were grown on MgO by means of laser molecular beam epitaxy using C o40F e40B20 target. The growth was combined with in situ structural characterization by three-dimensional reciprocal space mapping obtained from reflection high energy electron diffraction (RHEED) data. High-temperature single stage growth regime was adopted to fabricate CoFeB layers. As confirmed by the atomic force microscopy, the surface of CoFeB layers consists of closely spaced nanometer sized islands with dimensions dependent on the growth temperature. As shown by RHEED and XRD analysis, the CoFeB layers grown at high-temperature on MgO(001) possess body centered cubic (bcc) crystal structure with the lattice constant a =2.87 Å close to that of the C o75F e25 alloy. It was further shown that following the same high-temperature growth technique the MgO/CoFeB/MgO(001) heterostructures can be fabricated with top and bottom MgO layers of the same crystallographic orientation. The CoFeB layers were also grown on the GaN(0001) substrates using MgO(111) as a buffer layer. In this case, the CoFeB layers crystallize in bcc crystal structure with the (111) axis perpendicular to the substrate surface. The magnetic properties of the CoFeB/MgO (001) heterostructures have been investigated by measuring magnetization curves with a vibrating sample magnetometer as well as by performing magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR) studies. FMR spectra were obtained for the variety of the magnetic field directions and typically consisted of a single relatively narrow resonance line. The magnetization orientations and the resonance conditions were calculated in the framework of a standard magnetic energy minimization procedure involving a single K1 c cubic term for the magnetocrystalline anisotropy. This allows a fairly accurate description of the angular dependences of the resonance fields—both in-plane and out-of-plane. It was shown that CoFeB layers exhibit

  16. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Brochen, Stéphane; Brault, Julien; Chenot, Sébastien; Dussaigne, Amélie; Leroux, Mathieu; Damilano, Benjamin

    2013-01-01

    Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N A −N D as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N A . These experimental observations highlight an isolated acceptor binding energy of 245±25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 10 19 cm −3

  17. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

    International Nuclear Information System (INIS)

    Kryzhanovskaya, N. V.; Polubavkina, Yu. S.; Nevedomskiy, V. N.; Nikitina, E. V.; Lazarenko, A. A.; Egorov, A. Yu.; Maximov, M. V.; Moiseev, E. I.; Zhukov, A. E.

    2017-01-01

    The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10 8 cm –2 is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.

  18. Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers

    Science.gov (United States)

    Chang, H. W.; Akita, S.; Matsukura, F.; Ohno, H.

    2014-09-01

    We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn)Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors.

  19. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  20. Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.

    Science.gov (United States)

    Lin, Chia-Feng; Lee, Wen-Che; Shieh, Bing-Cheng; Chen, Danti; Wang, Dili; Han, Jung

    2014-12-24

    We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.

  1. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

    2017-05-01

    Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

  2. Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

    Energy Technology Data Exchange (ETDEWEB)

    Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2015-05-07

    The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

  3. Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO{sub 3}){sub n} films by means of metalorganic aerosol deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jungbauer, M.; Hühn, S.; Moshnyaga, V. [Erstes Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Egoavil, R.; Tan, H.; Verbeeck, J.; Van Tendeloo, G. [EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium)

    2014-12-22

    We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO{sub 3}){sub n} (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO{sub 3}(001) substrates by means of a sequential deposition of Sr-O/Ti-O{sub 2} atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5–6 repetitions of the SrO(SrTiO{sub 3}){sub 4} block at the level of 2.4%. This identifies the SrTiO{sub 3} substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy.

  4. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  5. Local electronic structure, work function, and line defect dynamics of ultrathin epitaxial ZnO layers on a Ag(1 1 1) surface.

    Science.gov (United States)

    Kumagai, T; Liu, S; Shiotari, A; Baugh, D; Shaikhutdinov, S; Wolf, M

    2016-12-14

    Using combined low-temperature scanning tunneling microscopy and Kelvin probe force microscopy we studied the local electronic structure and work function change of the (0 0 0 1)-oriented epitaxial ZnO layers on a Ag(1 1 1) substrate. Scanning tunneling spectroscopy (STS) revealed that the conduction band minimum monotonically downshifts as the number of the ZnO layers increases up to 4 monolayers (ML). However, it was found by field emission resonance (FER) spectroscopy that the local work function of Ag(1 1 1) slightly decreases for 2 ML thick ZnO but it dramatically changes and drops by about 1.2 eV between 2 and 3 ML, suggesting a structural transformation of the ZnO layer. The spatial variation of the conduction band minimum and the local work function change were visualized at the nanometer scale by mapping the STS and FER intensities. Furthermore, we found that the ZnO layers contained line defects with a few tens of nm long, which can be removed by the injection of a tunneling electron into the conduction band.

  6. Physical-chemical and technological aspects of the preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O by method of metal organic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Stejskal, J.; Nevriva, M.; Leitner, J.

    1995-01-01

    The method of metal organic vapour phase epitaxy (MO VPE) was used for preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O. The suitable chemical precursors (β-diketonates) on the literature data and of the own thermodynamic calculations were selected. The optimal thermodynamic data and thermodynamic stability of the prepared samples were determined

  7. Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2018-02-01

    The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

  8. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  9. Evidence of magnesium impact on arsenic acceptor state: Study of ZnMgO:As molecular beam epitaxy layers

    Science.gov (United States)

    Przezdziecka, E.; Lisowski, W.; Reszka, A.; Kozanecki, A.

    2018-03-01

    A series of ZnMgO oxide films single doped with arsenic was grown by plasma assisted molecular beam epitaxy method. The concentration of Mg in Zn1-xMgxO alloys was evaluated on the basis of X-Ray photoelectron spectroscopy (XPS). Changes of the band gap energy in Zn1-xMgxO were evidenced by cathodoluminescence measurements. Analysis of high resolution As 3d XPS spectra revealed three arsenic states with binding energies of ∼41 eV, 44.2 eV and 45.6 eV assigned to: deep acceptor of AsO, acceptor AsZn-2VZn and donor AsZn, respectively. Small concentrations of AsO species were detected in all samples. The As contribution due to AsZn-2VZn centers was found to be intensive, and increased with the concentration of Mg.

  10. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

    Science.gov (United States)

    Razeghi, M.

    2003-09-01

    The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3 5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

  11. Correlation between (in)commensurate domains of multilayer epitaxial graphene grown on SiC(0 0 0 1-bar ) and single layer electronic behavior

    International Nuclear Information System (INIS)

    Mendes-de-Sa, T G; Goncalves, A M B; Matos, M J S; Coelho, P M; Magalhaes-Paniago, R; Lacerda, R G

    2012-01-01

    A systematic study of the evolution of the electronic behavior and atomic structure of multilayer epitaxial graphene (MEG) as a function of growth time was performed. MEG was obtained by sublimation of a 4H-SiC(0 0 0 1-bar ) substrate in an argon atmosphere. Raman spectroscopy and x-ray diffraction were carried out in samples grown for different times. For 30 min of growth the sample Raman signal is similar to that of graphite, while for 60 min the spectrum becomes equivalent to that of exfoliated graphene. Conventional x-ray diffraction reveals that all the samples have two different (0001) lattice spacings. Grazing incidence x-ray diffraction shows that thin films are composed of rotated (commensurate) structures formed by adjacent graphene layers. Thick films are almost completely disordered. This result can be directly correlated to the single layer electronic behavior of the films as observed by Raman spectroscopy. Finally, to understand the change in lattice spacings as a result of layer rotation, we have carried out first principles calculations (using density functional theory) of the observed commensurate structures. (paper)

  12. Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers

    Directory of Open Access Journals (Sweden)

    Jutta Schwarzkopf

    2017-08-01

    Full Text Available The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzburg–Devonshire theory. In this paper, we illustrate the opportunity of ferroelectric domain engineering in the KxNa1−xNbO3 lead-free material system. In particular, the following examples are discussed in detail: (i Different substrates (NdGaO3, SrTiO3, DyScO3, TbScO3, and GdScO3 are used to systematically tune the incorporated epitaxial strain from compressive to tensile. This can be exploited to adjust the NaNbO3 thin film surface orientation and, concomitantly, the vector of electrical polarization, which rotates from mainly vertical to exclusive in-plane orientation. (ii In ferroelectric NaNbO3, thin films grown on rare-earth scandate substrates, highly regular stripe domain patterns are observed. By using different film thicknesses, these can be tailored with regard to domain periodicity and vertical polarization component. (iii A featured potassium concentration of x = 0.9 of KxNa1−xNbO3 thin films grown on (110 NdScO3 substrates favors the coexistence of two equivalent, monoclinic, but differently oriented ferroelectric phases. A complicated herringbone domain pattern is experimentally observed which consists of alternating MC and a1a2 domains. The coexistence of different types of ferroelectric domains leads to polarization discontinuities at the domain walls, potentially enabling high piezoelectric responses. In each of these examples, the experimental results are in excellent agreement with predictions based on the linear elasticity theory.

  13. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

    2017-03-13

    The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

  14. Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Fiedler, A.; Schewski, R.; Baldini, M.; Galazka, Z.; Wagner, G.; Albrecht, M.; Irmscher, K.

    2017-10-01

    We present a quantitative model that addresses the influence of incoherent twin boundaries on the electrical properties in β-Ga2O3. This model can explain the mobility collapse below a threshold electron concentration of 1 × 1018 cm-3 as well as partly the low doping efficiency in β-Ga2O3 layers grown homoepitaxially by metal-organic vapor phase epitaxy on (100) substrates of only slight off-orientation. A structural analysis by transmission electron microscopy (TEM) reveals a high density of twin lamellae in these layers. In contrast to the coherent twin boundaries parallel to the (100) plane, the lateral incoherent twin boundaries exhibit one dangling bond per unit cell that acts as an acceptor-like electron trap. Since the twin lamellae are thin, we consider the incoherent twin boundaries to be line defects with a density of 1011-1012 cm-2 as determined by TEM. We estimate the influence of the incoherent twin boundaries on the electrical transport properties by adapting Read's model of charged dislocations. Our calculations quantitatively confirm that the mobility reduction and collapse as well as partly the compensation are due to the presence of twin lamellae.

  15. Elaboration by epitaxy in liquid phase and monocrystalline layers of doped Yag. Realisation of wave guides lasers neodymium and ytterbium at low thresholds

    International Nuclear Information System (INIS)

    Pelenc, D.

    1993-10-01

    This thesis reports on the prototype development of a new laser waveguide fabrication technique, Liquid Phase Epitaxy, as part of the research on diode-pumped compact laser devices. This technique has been applied to the growth of single crystal thin layers of neodymium and ytterbium doped YAG on pure YAG substrates. In order to obtain good quality waveguides, we have defined the growth conditions, and demonstrated the advantage of the growth of an undoped YAG cladding layer. Two extra dopings have been studied: gallium, in order to control the refractive index of the layer, and lutetium, in order to control their lattice mismatch. The determination of the segregation coefficient of these four dopants has required the development of a model that takes into account the evolution of the melt with time. We have measured the refractive index increase for each dopant and proposed a mechanism that explains this increase. The spectroscopic characterisation of the layers has shown that the neodymium and ytterbium ions have the same properties as in the bulk material of the same composition. The laser characterisation has shown very low propagation losses (around 0.1 dB/cm), comparable to those of bulk. For the neodymium laser transition at 1064 nm, we have demonstrated the laser effect for an absorbed power threshold of 700μW and measured a slope efficiency of 40% for a threshold of 14 mW in diode pumping. For quasi 3 level transitions, a significant reduction in threshold with respect to unguided lasers has been obtained: at 946 nm in a neodymium doped waveguide, at 1029 nm in an ytterbium doped waveguide, with a 1W diode bar pump. A slope efficiency of 80% has also been measured in an ytterbium doped waveguided emitting at 1048nm

  16. Interface transparency and proximity effect in Nb/Cu triple layers realized by sputtering and molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tesauro, A; Aurigemma, A; Cirillo, C; Prischepa, S L; Salvato, M; Attanasio, C [Dipartimento di Fisica ' E R Caianiello' and INFM-Laboratorio Regionale Supermat, Universita degli Studi di Salerno, Baronissi, Sa, I-84081 (Italy)

    2005-01-01

    We have investigated, in the framework of the proximity effect theory, the interface transparency T between Nb and Cu in the case of high quality Nb/Cu trilayers fabricated by molecular beam epitaxy (MBE) and sputtering deposition techniques. The obtained T values do not seem to be strongly influenced by the fabrication methods but more by the intrinsic properties of the two metals; a slightly higher value for T has even been deduced for the MBE prepared samples. The proximity effect in these samples has also been studied in the presence of an external magnetic field. In the parallel configuration a significant shift towards lower values of the 2D-3D crossover temperature has been observed for MBE samples, in good agreement with very recent theoretical predictions. In the perpendicular case a positive curvature of the temperature dependence of the upper critical field has been detected, which was less pronounced for sputtered samples. Both the effects have been observed only for trilayers with low Nb thickness (<600 A) which confirms the crucial influence of the interface transparency on the values of the upper critical field in such samples.

  17. High Speed FETs Fabricated in GaAs/AlGaAs Layered Structures Prepared by Molecular Beam Epitaxy.

    Science.gov (United States)

    1984-01-01

    but should be considered when the oxide thickness becomes less than 200 1. In Fig. 8, the exact value of interface carrier density (dotted line) is...from the sub- strate and site transfer of the amphoteric Si dopant in the doped AlGaAs layer. The structure of layer A is more susceptible to surface...of the amphoteric Si dopant in the doped AlGaAs layer rather than deteriora- tion of the GaAs itself. The decrease in intensity of exciton lies is

  18. Influence of interface-included disorder on classical quantum conductivity of CdTe:In epitaxial layers

    International Nuclear Information System (INIS)

    Lusakowski, J.; Karpierz, K.; Grynberg, M.; Karczewski, G.; Wojtowicz, T.; Contreras, S.; Callen, O.

    1997-01-01

    An influence of disorder originated from the substrate/layer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes. (author)

  19. Setting limits on the accuracy of X-ray determination of Al concentration in {AlGaAs}/{GaAs} epitaxial layers

    Science.gov (United States)

    Bassignana, I. C.; Macquistan, D. A.; Streater, R. W.; Hillier, G. C.; Packwood, R.; Moore, V.

    1997-02-01

    A review of the existing literature shows that the accuracy with which the Al composition of a coherent {AlxGa1-xAs}/{GaAs} heteroepitaxial layer can be determined from the lattice parameter difference between it and the substrate has been a topic of considerable controversy. The present work uses high resolution X-ray diffraction (HRXRD) and electron probe microanalysis (EPMA) to study 47 samples of epitaxial AlGaAs on commercially available GaAs(SI) substrates over the entire composition range in order to investigate the accuracy and reproducibility which can realistically be achieved. Several factors which can contribute to inaccuracies were revisited experimentally in order to assess their contribution; these included: differences in the lattice parameter of commercially available GaAs(SI) substrates between liquid encapsulated Czochralski (LEC) and vertical gradient freeze (VGF) substrates, as well as boule to boule variations, intrinsic differences in the lattice parameter of AlGaAs prepared by MBE and MOCVD, and diffractometer theta step size variations for three different instruments. The data show that in the x = 0.2-0.8 range the composition is a linear function of the angular separation: ΔΘ004 (arcsec) = -368 x and that the absolute Al compositions can routinely be determined at best to within ±1% Al. This approach uses neither the absolute lattice parameters of GaAs and AlAs nor their Poisson ratios; however, the spread on the experimental data from this large number of samples was used to calculate upper limits on the range for both. The same samples as discussed above were used to show that, with care, secondary ion mass spectroscopy (SIMS) can be calibrated over a limited composition range to provide a measurement of the Al mole fraction. SIMS measurements, which are insensitive to the substrate lattice parameter, were compared to HRXRD measurements of Al composition for AlGaAs epitaxial layers grown on intentionally doped GaAs substrates (n

  20. Metal-organic-vapor-phase-epitaxy and characterization of homoepitaxial ZnO-layers; Metallorganische Gasphasenepitaxie und Charakteriesierung homoepitaktischer ZnO-Schichten

    Energy Technology Data Exchange (ETDEWEB)

    Heinze, Soeren

    2009-03-30

    ZnO is a direct semiconductor with a band gap of 3.37 eV and an exciton binding energy of about 60 meV. By alloying with cadmium or magnesium the band gap can be varied between 2.9 eV and 4 eV, which makes the realization of for instance quantum pot structures. Therefore ZnO is a promising material for optoelectronic applications in the blue and near-ultraviolet spectral range. In spite of world-wide numerous research activities over the last years the realization of p-type ZnO could indeed not sufficiently (i.e. reproduceable and long-time stably) be solved. The ZnO layers of this thesis were fabricated by means of metalorganic gas-phase epitaxy. By means of the studies on heteroepitactically deposed, undoped layers I show the limits of the heteroepitaxy. Although in doping attempts no p-type ZnO could be fabricated. By introduction of a three-stage growth procedure physical properties (morphology, luminescence, crystallographic and electric properties) of the upper ZnO layer could be distinctly improved. On the other hand it was proved that during the fabrication process an electrically high-conductive intermediate layer in the neighbourhood of the substrate/ZnO interface is formed, the formation of which cannot be avoided in the heteroepitaxy. Since about three years ZnO substrates with very good quality are commercially available. Therefore the essential part of this thesis tracts my works on the homoepitaxy of ZnO. For a successful homoepitactical growth a thermal pre-treatment (annealing) of the substrate is necessary. Thereby the substrate is located in a surrounding of ZnO powder and an oxygen atmosphere. The optimal tempering conditions were determined and the influence of these pre-treatment on the physical properties of the substrated were detailedly studied. After the annealing the substrates are suited for the epitaxy. The experiences from the heteroepitaxy could not without more ado be transferred to the homoepitaxy. The quality of the homoepitactical

  1. Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Mattiazzo, S., E-mail: serena.mattiazzo@pd.infn.it [Università degli Studi di Padova, Padova IT 35131 (Italy); Aimo, I. [Politecnico di Torino and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Torino, Torino IT 10129 (Italy); Baudot, J. [Universitè de Strasbourg, IPHC, Strasbourg F67037 (France); CNRS, MMR7178, Strasbourg F67037 (France); Bedda, C. [Politecnico di Torino and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Torino, Torino IT 10129 (Italy); La Rocca, P. [Università di Catania and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Catania, Catania IT 95123 (Italy); Perez, A. [Universitè de Strasbourg, IPHC, Strasbourg F67037 (France); CNRS, MMR7178, Strasbourg F67037 (France); Riggi, F. [Università di Catania and Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Catania, Catania IT 95123 (Italy); Spiriti, E. [Istituto Nazionale di Fisica Nucleare (INFN) Laboratori Nazionali di Frascati and Sezione di Roma 3, Roma IT 00146 (Italy)

    2015-10-01

    The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018–2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

  2. Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

    Science.gov (United States)

    Fedorov, V. V.; Bolshakov, A. D.; Mozharov, A. M.; Sapunov, G. A.; Shtrom, I. V.; Kirilenko, D. A.; Sitnikova, A. A.; Mukhin, I. S.

    2017-11-01

    Silicon and aluminium nitrides, commonly used as buffer layers for GaN growth on Si are wide gap insulators, preventing barrier free charge-carrier transport across the heterojunction and limiting the functionality of GaN-on-silicon technology. In this work we explore possibility of direct growth of GaN on Si nano-heterostructures by PA-MBE with use of Ga-nanodroplets as seeds. It is demonstrated that use of seeding layer can result in formation of Y-shaped planar GaN nanoparticles (GaN tripods) along with commonly observed GaN nanowires. Growth mechanism, morphology and structural characterization of GaN/Si nano-heterostructures is discussed.

  3. Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

    International Nuclear Information System (INIS)

    Zytkiewicz, Z.R.

    1998-01-01

    Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

  4. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    Science.gov (United States)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  5. Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs

    Science.gov (United States)

    Kurebayashi, H.; Skinner, T. D.; Khazen, K.; Olejník, K.; Fang, D.; Ciccarelli, C.; Campion, R. P.; Gallagher, B. L.; Fleet, L.; Hirohata, A.; Ferguson, A. J.

    2013-02-01

    We report an on-chip, electrically detected ferromagnetic resonance study on microbars made from GaAs/Fe(1 nm)/GaAs layers. Our experiments, performed at several different microwave frequencies and static magnetic field directions, enable us to observe a strong in-plane uniaxial anisotropy of the linewidth. We attribute the linewidth anisotropy to the two magnon scattering process, supporting this by calculations of possible linewidth broadening mechanisms. Our findings are useful for designing future high-performance spintronic devices based on nanoscale magnetic structures.

  6. Epitaxial growth of mixed conducting layered Ruddlesden–Popper La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) phases by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J., E-mail: s.skinner@imperial.ac.uk

    2013-10-15

    Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO{sub 3} and NdGaO{sub 3} substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) have been epitaxially grown on SrTiO{sub 3} (0 0 1) or NdGaO{sub 3} (1 1 0) single crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time.

  7. Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Senyukov, S., E-mail: serhiy.senyukov@cern.ch; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

    2013-12-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz0.18μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10{sup 13}n{sub eq}/cm{sup 2} was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz0.18μm CMOS process for the ALICE ITS upgrade.

  8. An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingge; Li, Chen; Zhang, Kelvin H. L.; McBriarty, Martin E.; Spurgeon, Steven R.; Mehta, Hardeep S.; Wu, Di; Chambers, Scott A.

    2017-08-07

    Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

  9. Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

    KAUST Repository

    Young, E. C.

    2016-11-23

    Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surface coverage is ∼1012 cm−2, which is consistent with previous reports on GaAs and silicon wafers. At the onset of growth, the Ca species segregates at the growth front while incorporating at low levels. The incorporation rate is strongly temperature dependent. It is about 0.03% at 820 °C and increases by two orders of magnitude when the temperature is reduced to 600 °C, which is the typical growth temperature for InGaN alloy. Consequently, [Ca] is as high as 1018 cm−3 in InGaN/GaN quantum well structures. Such a huge concentration might be detrimental for the efficiency of light emitting diodes (LEDs) if one considers that Ca is potentially a source of Shockley-Read-Hall (SRH) defects. We thus developed a specific growth strategy to reduce [Ca] in the MBE grown LEDs, which consisted of burying Ca in a low temperature InGaN/GaN superlattice (SL) before the growth of the active region. Finally, two LED samples with and without an SL were fabricated. An increase in the output power by one order of magnitude was achieved when Ca was reduced in the LED active region, providing evidence for the role of Ca in the SRH recombination.

  10. ZnO and ZnSe thin films grown by Atomic Layer Epitaxy in a gas flow system

    Science.gov (United States)

    Godlewski, Marek; Guziewicz, Elzbieta; Kopalko, Krzysztof; Lusalowska, Elzbieta

    2003-03-01

    In the presentation we will briefly review our recent works on thin films of ZnO and ZnSe for possible applications in opto-electronics. Thin films of ZnO were grown by four different methods on either semiconductor substrates or on a glass plates. The latter system was successfully used as a substrate for deposition of amorphous GaN epilayers, using low temperature plasma-assisted MOCVD technique. Properties of ALE-grown ZnO films and of GaN epilayers grown on ZnO buffer layer will be shortly analyzed. Thin films of ZnSe were grown using synthesis from Zn and Se. These films show bright white color light emission. Temperature of the emission and brightness can be optimized by either modifications in a growth procedure or variations in excitation conditions. Nature of white emission and optimization procedures will be described. This work was partly supported by grant no. PBZ-KBN-044/P03/2001 of KBN. The ALE reactor was bought using SEZAM grant of Foundation for Polish Science.

  11. Effects of AlN buffer layers on the structural and the optical properties of GaN epilayers grown on Al2O3 substrates by using plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Jeon, Heechang; Lee, Seungjoo; Kumar, Sunil; Kang, Taewon; Lee, Namhyun; Kim, Taewhan

    2014-01-01

    GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by using plasma-assisted molecular-beam epitaxy. The GaN epilayer with an AlN buffer layer was much smaller than the GaN epilayer without an AlN buffer layer. The crystal quality of the GaN active layer was improved by utilizing an AlN layer, which acted as a nucleation layer. The reduced defect density promoted GaN coalition. The double-crystal rocking curves and the photoluminescence spectra showed that the GaN epilayer grown on a 4-nm AlN buffer layer had the best quality among the several kinds of samples. The photoluminescence intensity of the GaN epilayer which is related to the density of the crystal defects was lower when an AlN buffer layer was used the thin AlN nucleation layer protected against stain propagation. These results indicate that GaN epilayers grown on AIN buffer layers hold promise for applications in short-wavelength optoelectronic devices.

  12. Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Queraltó, A.; Pérez del Pino, A., E-mail: aperez@icmab.es; Mata, M. de la; Tristany, M.; Gómez, A.; Obradors, X.; Puig, T. [Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia (Spain); Arbiol, J. [Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia (Spain); Institució Catalana de Recerca i Estudis Avançats (ICREA), Passeig Lluís Companys, 23, 08010 Barcelona, Catalonia (Spain)

    2015-06-29

    Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.

  13. Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

    Directory of Open Access Journals (Sweden)

    Yuanzhou Gu

    2014-04-01

    Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

  14. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  15. Layer-by-layer polymer coated gold nanoparticles for topical delivery of imatinib mesylate to treat melanoma.

    Science.gov (United States)

    Labala, Suman; Mandapalli, Praveen Kumar; Kurumaddali, Abhinav; Venuganti, Venkata Vamsi Krishna

    2015-03-02

    The aim of this study was to investigate the feasibility of using layer-by-layer polymer coated gold nanoparticles (AuNP) as a carrier for topical iontophoretic delivery of imatinib mesylate (IM). AuNP were prepared by the Turkevich method and were stabilized and functionalized using polyvinylpyrrolidone and polyethylene imine. The functionalized AuNP were then sequentially coated with anionic poly(styrenesulfonate) and cationic polyethylene imine and loaded with IM. The layer-by-layer polymer coated AuNP (LbL-AuNP) showed average particle size and zeta-potential of 98.5 ± 4.3 nm and 32.3 ± 1.3 mV respectively. After LbL coating of AuNP, the surface plasmon resonance wavelength shifted from 518 to 530 nm. The loading efficiency of IM in LbL-AuNP was found to be 28.3 ± 2.3%, which was greatest for any small molecule loaded in AuNP. In vitro skin penetration studies in excised porcine ear skin showed that iontophoresis (0.47 mA/cm(2)) application enhanced the skin penetration of IM loaded AuNP by 6.2-fold compared to passive application. Tape stripping studies showed that iontophoresis of IM loaded LbL-AuNP retained 7.8- and 4.9-fold greater IM in stratum corneum and viable skin respectively compared with iontophoresis of free IM. LbL-AuNP were taken up rapidly (15 min) by B16F10 murine melanoma cells. Furthermore, IM loaded LbL-AuNP significantly (p < 0.001) decreased B16F10 cell viability compared to free IM. We have shown for the first time that IM can be delivered by topical application using LbL coated gold nanoparticles to treat melanoma.

  16. Growth kinetics and structural perfection of (InN)1/(GaN)1–20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

    2016-01-01

    The growth kinetics and structural perfection of (InN) 1 /(GaN) 1–20 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN) 1 /(GaN) 4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  17. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  18. Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Ramsteiner, Manfred; Gao, Guanhui; Galves, Lauren A; Sharma, Bharat; Corfdir, Pierre; Calabrese, Gabriele; de Souza Schiaber, Ziani; Pfüller, Carsten; Trampert, Achim; Lopes, João Marcelo J; Brandt, Oliver; Geelhaar, Lutz

    2017-09-13

    We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.

  19. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  20. Growth and magnetotransport properties of epitaxial films of the layered perovskite La2-2xSr1+2xMn2O7

    International Nuclear Information System (INIS)

    Philipp, J.B.; Alff, L.; Gross, R.; Klein, J.; Recher, C.

    2002-01-01

    Epitaxial thin films of the bilayered perovskite La 2-2x Sr 1+2x Mn 2 O 7 (x=0.3, 0.4) have been grown by laser molecular beam epitaxy on NdGaO 3 substrates. Magnetotransport measurements with the current in the ab-plane and along the c-axis direction showed an intrinsic c-axis tunneling magnetoresistance effect associated with nonlinear current-voltage-characteristics for the x=0.3 compound. Besides the colossal magnetoresistance effect around the Curie temperature T C , at temperatures below about 40 K an additional high-field magnetoresistance was found most likely due to a strain and disorder induced re-entrant spin glass state in both the x=0.3 and 0.4 compounds. Our experiments show that the substrate induced coherency strain in the high quality epitaxial films results in magnetotransport properties that show markedly different behavior from those of single crystals. (orig.)

  1. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  2. Enhanced performance of solution-processed broadband photodiodes by epitaxially blending MAPbBr3quantum dots and ternary PbSxSe1-xquantum dots as the active layer.

    Science.gov (United States)

    Sulaman, Muhammad; Yang, Shengyi; Jiang, Yurong; Tang, Yi; Zou, Bingsuo

    2017-12-15

    Organic-inorganic hybrid photodetectors attract more and more interest, since they can combine the advantages of both organic and inorganic materials into one device, and broadband photodetectors are widely used in many scientific and industrial fields. In this work, we demonstrate the enhanced-performance solution-processed broadband photodiodes by epitaxially blending organo-lead halide perovskite (MAPbBr 3 ) colloidal quantum dots (CQDs) with ternary PbS x Se 1-x CQDs as the active layer. As a result, the interfacial features of the hetero-epitaxial nanocomposite MAPbBr 3 :PbS x Se 1-x enables the design and perception of functionalities that are not available for the single-phase constituents or layered devices. By combining the high electrical transport properties of MAPbBr 3 QDs with the highly radiative efficiency of PbS 0.4 Se 0.6 QDs, the photodiodes ITO/ZnO/PbS 0.4 Se 0.6 :MAPbBr 3 /Au exhibit a maximum photoresponsivity and specific detectivity of 21.48 A W -1 and 3.59 × 10 13 Jones, 22.16 A W -1 and 3.70 × 10 13 Jones at room temperature under 49.8 μW cm -2 532 nm laser and 62 μW cm -2 980 nm laser, respectively. This is higher than that of the layered photodiodes ITO/ZnO/PbS 0.4 Se 0.6 /MAPbBr 3 /Au, pure perovskite (MAPbBr 3 ) (or PbS 0.4 Se 0.6 ) QD-based photodiodes reported previously, and it is also better than the traditional inorganic semiconductor-based photodetectors. Our experimental results indicate that epitaxially-aligned nanocomposites (MAPbBr 3 :PbS x Se 1-x ) exhibit remarkable optoelectronic properties that are traceable to their atomic-scale crystalline coherence, and one can utilize the excellent photocarrier diffusion from PbS x Se 1-x into the perovskite to enhance the device performance from the UV-visible to infrared region.

  3. Enhanced performance of solution-processed broadband photodiodes by epitaxially blending MAPbBr3 quantum dots and ternary PbSxSe1‑x quantum dots as the active layer

    Science.gov (United States)

    Sulaman, Muhammad; Yang, Shengyi; Jiang, Yurong; Tang, Yi; Zou, Bingsuo

    2017-12-01

    Organic–inorganic hybrid photodetectors attract more and more interest, since they can combine the advantages of both organic and inorganic materials into one device, and broadband photodetectors are widely used in many scientific and industrial fields. In this work, we demonstrate the enhanced-performance solution-processed broadband photodiodes by epitaxially blending organo-lead halide perovskite (MAPbBr3) colloidal quantum dots (CQDs) with ternary PbSxSe1‑x CQDs as the active layer. As a result, the interfacial features of the hetero-epitaxial nanocomposite MAPbBr3:PbSxSe1‑x enables the design and perception of functionalities that are not available for the single-phase constituents or layered devices. By combining the high electrical transport properties of MAPbBr3 QDs with the highly radiative efficiency of PbS0.4Se0.6 QDs, the photodiodes ITO/ZnO/PbS0.4Se0.6:MAPbBr3/Au exhibit a maximum photoresponsivity and specific detectivity of 21.48 A W‑1 and 3.59 × 1013 Jones, 22.16 A W‑1 and 3.70 × 1013 Jones at room temperature under 49.8 μW cm‑2 532 nm laser and 62 μW cm‑2 980 nm laser, respectively. This is higher than that of the layered photodiodes ITO/ZnO/PbS0.4Se0.6/MAPbBr3/Au, pure perovskite (MAPbBr3) (or PbS0.4Se0.6) QD-based photodiodes reported previously, and it is also better than the traditional inorganic semiconductor-based photodetectors. Our experimental results indicate that epitaxially-aligned nanocomposites (MAPbBr3:PbSxSe1‑x) exhibit remarkable optoelectronic properties that are traceable to their atomic-scale crystalline coherence, and one can utilize the excellent photocarrier diffusion from PbSxSe1‑x into the perovskite to enhance the device performance from the UV-visible to infrared region.

  4. The gradient crystalline structure and microhardness in the treated layer of TC17 via high energy shot peening

    International Nuclear Information System (INIS)

    Li, Huimin; Liu, Yingang; Li, Miaoquan; Liu, Hongjie

    2015-01-01

    Graphical abstract: - Highlights: • The gradient nanocrystalline structure was induced in treated layer of TC17. • The thickness of nanograin layer with an average grain size of 10.5 nm was 20 μm. • The composition of the treated layer of TC17 was discussed. • The gradient variation of the microhardness was obtained in treated layer of TC17. - Abstract: The gradient nanocrystalline structure from the topmost surface to the matrix of a bulk coarse-grained TC17 was attained by using high energy shot peening treatment at an air pressure of 0.35 MPa and a processing duration of 30 min. The thickness from the topmost surface with a grain size of about 10.5 nm to the matrix with a micrometer structure was about 120 μm, and the thickness in the nanocrystalline layer was about 20 μm. The microscopic and nanocrystalline structure characteristic in the treated layer were investigated via X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The nanograins layer, the nanometer-thick laminated structure layer, the refined grains layer and the low-strain matrix layer occurred in sequence from the topmost surface to the matrix, and therefore the gradient nanocrystalline structure in the treated layer was produced by using high energy shot peening. TEM investigation confirmed that the dislocation activity with very high stacking fault energy induced by surface severe plastic deformation mainly controlled the grain refinement. The microhardness (HV 0.02 ) from the topmost surface to the matrix gradually increased by 43% from 440 to 629 and the gradient variation of the microhardness with the depths from the topmost surface to the matrix of treated TC17 was obtained.

  5. Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoF e2O4/A l2O3/Si (111 ) films studied by x-ray magnetic circular dichroism

    Science.gov (United States)

    Wakabayashi, Yuki K.; Nonaka, Yosuke; Takeda, Yukiharu; Sakamoto, Shoya; Ikeda, Keisuke; Chi, Zhendong; Shibata, Goro; Tanaka, Arata; Saitoh, Yuji; Yamagami, Hiroshi; Tanaka, Masaaki; Fujimori, Atsushi; Nakane, Ryosho

    2017-09-01

    Epitaxial CoF e2O4/A l2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoF e2O4 . To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoF e2O4/A l2O3 interface is necessary. In this paper, we study the cation distribution, electronic structures, and the magnetic properties of CoF e2O4(111 ) layers with various thicknesses (thickness d =1.4 , 2.3, 4, and 11 nm) in the epitaxial CoF e2O4(111 ) /A l2O3(111 ) /Si (111 ) structures using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoF e2O4 measured by XMCD gradually decreases with decreasing thickness d , and finally, a magnetically dead layer is clearly detected at d =1.4 nm . The magnetically dead layer has frustration of magnetic interactions, which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoF e2O4/A l2O3 interface originates from various complex networks of superexchange interactions through the change in the cation distribution and electronic structure. Furthermore, from comparison of the magnetic properties between d =1.4 and 2.3 nm, it is found that the ferrimagnetic order of the magnetically dead layer at the CoF e2O4/A l2O3 interface is partially restored by increasing the thickness from d =1.4 to 2.3 nm.

  6. Photoluminescence of heterostructures with GaP1−xNx and GaP1−x−yNxAsy layers grown on GaP and Si substrates by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Lazarenko, A. A.; Nikitina, E. V.; Sobolev, M. S.; Pirogov, E. V.; Denisov, D. V.; Egorov, A. Yu.

    2015-01-01

    The structural and optical properties of heterostructures containing GaP 1−x N x ternary and GaP 1−x−y N x As y quaternary alloy layers are discussed. The heterostructures are grown by molecular-beam epitaxy on GaP and Si substrates. The structures are studied by the high-resolution X-ray diffraction technique and photoluminescence measurements in a wide temperature range from 10 to 300 K. In the low-temperature photoluminescence spectra of the alloys with a low nitrogen fraction (x < 0.007), two clearly resolved narrow lines attributed to the localized states of nitrogen pairs and the phonon replicas of these lines are observed

  7. Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

    2012-01-01

    -plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

  8. Selective epitaxy using the gild process

    Science.gov (United States)

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  9. Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

    KAUST Repository

    Soltani, S.

    2017-02-17

    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

  10. Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3

    Directory of Open Access Journals (Sweden)

    H. B. Zhang

    2016-01-01

    Full Text Available Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001 substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric perovskite SrRuO3.

  11. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

    Science.gov (United States)

    2012-01-01

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh. PMID:22297193

  12. Study on the deterioration mechanism of layered rock-salt electrodes using epitaxial thin films - Li(Ni, Co, Mn)O2 and their Zr-O surface modified electrodes

    Science.gov (United States)

    Abe, Machiko; Iba, Hideaki; Suzuki, Kota; Minamishima, Hiroaki; Hirayama, Masaaki; Tamura, Kazuhisa; Mizuki, Jun'ichiro; Saito, Tomohiro; Ikuhara, Yuichi; Kanno, Ryoji

    2017-03-01

    Deterioration mechanism of Li(Ni, Co, Mn)O2 and Zr-O surface modified electrodes has been elucidated using epitaxial thin films synthesized by pulsed laser deposition. The electrodes comprise a mixture of layered rock-salt and spinel phases. The deterioration mechanism is analyzed using cyclic voltammetry, in situ X-ray diffraction measurements, and in situ neutron reflectometry. The spinel phase in the electrodes has low electrochemical activity and is not involved in Li insertion/extraction. The amount of Li participating in the charge-discharge reactions in the layered rock-salt phase increases with cycling, inducing a phase change at the electrode surface, lowering the reversibility. In contrast, in the Zr-O surface modified electrode, the spinel phase does not increase on charging/discharging. Thus, the Zr-O modification stabilizes the surface of layered rock-salt structure, thereby improving the cycling characteristics. Also, after the Zr-O modification, the Li concentration in the liquid electrolyte near the electrode/electrolyte interface increases during charging/discharging. The Zr-O surface modification not only stabilizes the electrode surface but also causes changes on the electrolyte side. Using the mixed model electrodes, we elucidate the mechanism of electrode deterioration and the origin of the improvement in cycling characteristics occurring on surface modification.

  13. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  14. Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

    International Nuclear Information System (INIS)

    Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

    2012-01-01

    Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

  15. Chemical modification of epitaxial graphene: spontaneous grafting of aryl groups.

    Science.gov (United States)

    Bekyarova, Elena; Itkis, Mikhail E; Ramesh, Palanisamy; Berger, Claire; Sprinkle, Michael; de Heer, Walt A; Haddon, Robert C

    2009-02-04

    The addition of nitrophenyl groups to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds changed the electronic structure and transport properties of the EG from near-metallic to semiconducting.

  16. Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7x7 surface

    International Nuclear Information System (INIS)

    Fukaya, Y.; Shigeta, Y.; Maki, K.

    2000-01-01

    In order to investigate the dynamic process during growth of a Si layer on the Si(111)-7x7 surface held at 380 deg. C, the rocking curve of reflection high-energy electron diffraction (RHEED) is continuously measured at 0.5 deg. to 6 deg. at intervals of 0.05 deg. to the glancing angle of the incident electron beam which takes 18 sec. At the initial growth stage, the multilayer islands are grown on the native 7x7 surface with broader Bragg peaks in the rocking curve than those from the native surface. The sharpness of the Bragg peak is subsequently recovered after the thickness of the Si layer reaches 3 BL (1 BL=0.31 nm), at which the growth transforms to layer-by-layer growth. The comparison of the measured rocking curve with the calculated one based on the dynamical theory of RHEED intensity is also performed by optimizing each atomic position in the growing layer so as to minimize the difference between both curves. The space of the double layer of the (111) plane in the multilayer islands expands and is restored to the normal spacing after the growth mode transforms to the layer-by-layer mode. The broadening of the Bragg peaks at the initial growth stage relates to the rearrangement process of a stacking-fault layer in the 7x7 structure on the substrate surface

  17. Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1-xN layers with medium Al content (x=0.4-0.6)

    Science.gov (United States)

    Nechaev, D. V.; Brunkov, P. N.; Troshkov, S. I.; Jmerik, V. N.; Ivanov, S. V.

    2015-09-01

    Paper presents the comparative analysis of Metal Modulated Epitaxy (MME) and Droplet Elimination by Thermal Annealing (DETA) techniques in the low-temperature plasma-assisted MBE of thick AlxGa1-xN layers with the medium Al content (x=0.4-0.6) grown under the highly metal-rich conditions. Atomically smooth surface with RMS of about 0.4 nm across the area of 2×2 μm2 has been achieved for AlGaN layers grown at FIII/FN flux ratio of 2.5 and substrate temperature of 700 °C by using DETA. The MME growth of AlGaN epilayers leads to their cracking due to the tensile stress introduced by relaxed GaN interlayers which are formed during the nitrogen exposure of the Ga-enriched AlGaN surface. A new technique based on IR-pyrometry measurements has been developed to monitor in situ metal accumulation and depletion on the growth surface.

  18. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  19. Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

    Science.gov (United States)

    Rodriguez, J. B.; Cerutti, L.; Patriarche, G.; Largeau, L.; Madiomanana, K.; Tournié, E.

    2017-11-01

    We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleation layer. In particular, we investigate the influence of the AlSb layer thickness when this nucleation layer is grown at low temperature (400 °C). X-ray diffraction techniques, atomic force microscopy and transmission electron microscopy were used to characterize the material properties. We demonstrate that there exists a correlation between the micro-twin density, the surface roughness and the broadening of the ω-scan GaSb peaks. Moreover, the AlSb thickness has a strong influence on the micro-twin density, and must be carefully optimized to improve the GaSb quality.

  20. Low turn-on voltage perovskite light-emitting diodes with methanol treated PEDOT:PSS as hole transport layer

    Science.gov (United States)

    Wang, Zijun; Li, Zhirun; Zhou, Dianli; Yu, Junsheng

    2017-12-01

    We demonstrate the reduced low turn-on voltage of perovskite light-emitting diodes (PeLEDs) with methanol (MeOH) treated poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as a hole transport layer (HTL). The MeOH treated PEDOT:PSS layer presents improved hole injection through reducing the contact barrier between the HTL and the CH3NH3PbBr3 emitting layer without sacrificing the quality of the perovskite film, which was characterized by X-ray diffraction, scanning electron microscopy, and time-resolved photoluminescence analysis. The optimized PeLEDs with the MeOH treated PEDOT:PSS layer exhibit a low turn-on voltage of 2.4 V and a maximum luminance of 1565 cd/m2, which represents a significant improvement over the PeLEDs using a pristine PEDOT:PSS layer. The approach could be used as a general method for decreasing the hole-injection barrier of PeLEDs and, eventually, to enhance the device performance.

  1. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  2. UV-treated graphene oxide as anode interfacial layers for P3HT : PCBM solar cells

    Science.gov (United States)

    Cheng, Cheng-En; Tsai, Cheng-Wei; Pei, Zingway; Lin, Tsung-Wu; Chang, Chen-Shiung; Shih-Sen Chien, Forest

    2015-06-01

    Solution-processable graphene oxide (GO) ultrathin films were introduced as anode interfacial layers (AILs) for polymer solar cells (PSCs). The photovoltaic performance of PSCs containing thermal- and UV-treated GO was comparable to that of PSCs with conventional poly(3,4-ethyledioxythiphene):poly(styrenesulfonate) AILs. UV treatment induced the surface activation of GO; an increase in the work function of UV-treated GO improved the energy band alignment at the GO/poly(3-hexylthiophene) interface, which accounted for the efficient hole collection and photovoltaic performance of PSCs with treated GO.

  3. Preferentially Etched Epitaxial Liftoff of InP Material

    Science.gov (United States)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

    1997-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  4. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  5. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

    Science.gov (United States)

    Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 1012 cm-1 eV-1. On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 °C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 × 1011 cm-1 eV-1 and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 °C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities.

  6. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  7. Coincident-site lattice matching during van der Waals epitaxy

    OpenAIRE

    Boschker, Jos E.; Galves, Lauren A.; Flissikowski, Timur; Lopes, Joao Marcelo J.; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6?3???6?3)R30? buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb2Te3 /graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate ...

  8. Optical properties of metastable shallow acceptors in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.; Monemar, Bo

    2010-01-01

    GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is C-N, while after annealing a second m...

  9. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  10. Fabrication of 5 cm long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer on textured Ni-5%W substrate for YBCO coated conductors via dip-coating PACSD method

    Energy Technology Data Exchange (ETDEWEB)

    Lei, M.; Wang, W.T.; Pu, M.H.; Yang, X.S.; He, L.J. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia); Zhao, Y., E-mail: yzhao@home.swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia)

    2011-11-15

    Epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer for YBCO coated conductors was deposited via fluorine-free dip-coating CSD. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by carefully controlling the processing. YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via CSD approach. Five centimeters long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer for YBCO coated conductors was deposited via dip-coating polymer-assisted chemical solution deposition (PACSD) approach on bi-axially textured Ni-5%W (2 0 0) alloy substrate. The film formation and texture evolution were investigated using X-ray diffraction and scanning electron microscopy. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by way of carefully controlling the concentration of precursor solution, withdrawing speed, annealing temperature and dwelling time. On consideration of both microstructure and texture, epitaxial SCO single buffer layers were fabricated using precursor solution of 0.3 M cationic concentration, the withdrawing speed of 10 mm/min and heat treatment at 1100 deg. C in Ar-5%H{sub 2} mixture gas for 0.5 h. Epitaxial YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via dip-coating PACSD approach. The PACSD approach was a promising way to fabricate long and low-cost YBCO coated conductors.

  11. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  12. Proof of concept of an epitaxy-free layer-transfer process for silicon solar cells based on the reorganisation of macropores upon annealing

    International Nuclear Information System (INIS)

    Depauw, V.; Gordon, I.; Beaucarne, G.; Poortmans, J.; Mertens, R.; Celis, J.-P.

    2009-01-01

    To answer the challenge of less expensive renewable electricity, the photovoltaics community is focusing on producing thinner silicon solar cells. A few years ago, in the field of silicon-on-nothing structures, micron-thick monocrystalline layers suspended over their parent wafer were produced by high-temperature annealing of specific arrays of macropores. Those macropores reorganise into one single void and leave a thin overlayer on top. Since this method may be an inexpensive way of fabricating high-quality silicon films, this paper investigates its potential for photovoltaic applications. In particular, we investigated if large surfaces can be produced and transferred to foreign substrates with this method. We fabricated basic solar cells, without rear-surface passivation, on 5 cm x 5 cm-large and 1-μm-thick films transferred to glass, that showed energy-conversion efficiencies up to 2.6%. These cells demonstrate the feasibility of the presented concept as a layer-transfer process for solar-cell application. After formation by annealing, the film is only barely attached to its parent wafer, but can still safely be handled provided that any abrupt gas flow or pumping to vacuum is avoided. After transfer and permanent bonding, the sample can be handled as any bulk wafer.

  13. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

    International Nuclear Information System (INIS)

    Dobosz, D.; Zytkiewicz, Z.R.; Jakiela, R.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Piotrowski, T.T.; Barcz, A.

    2005-01-01

    The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750 C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580 C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480 C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. 2D vibrational properties of epitaxial silicene on Ag(111)

    Science.gov (United States)

    Solonenko, Dmytro; Gordan, Ovidiu D.; Le Lay, Guy; Sahin, Hasan; Cahangirov, Seymur; Zahn, Dietrich R. T.; Vogt, Patrick

    2017-03-01

    The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300 °C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.

  16. Optical characterization of Zn-doped In{sub 0.14}Ga{sub 0.86}As{sub 0.13}Sb{sub 0.87} layers grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Reyes, Joel, E-mail: jdiazr2010@yahoo.com [CIBA-IPN, Ex-Hacienda de San Juan Molino Km. 1.5. Tepetitla, Tlaxcala 90700. Mexico (Mexico); Rodriguez-Fragoso, Patricia; Mendoza-Alvarez, Julio Gregorio [Departamento de Fisica, CINVESTAV-IPN, A.P. 14-740, Mexico, D.F. 07000 (Mexico)

    2013-02-15

    Quaternary layers were grown by liquid phase epitaxy on (1 0 0) GaSb substrates under lattice-matching conditions. The low-temperature photoluminescence of p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} was obtained as a function of incorporated zinc concentration. The photoluminescence spectra were interpreted using a model which takes into account nonparabolicity of the valence band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filling as well as band tailing due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of photoluminescence spectra. It is proposed that low-temperature photoluminescence band-to-band energy transition can be used to obtain the carrier concentration in p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}. This method could be used to estimate free carrier concentration ranging from 6.036 Multiplication-Sign 10{sup 16} to 1.350 Multiplication-Sign 10{sup 18} cm{sup -3}. - Highlights: Black-Right-Pointing-Pointer In this work the optical characterization of InGaAsSb highly doped with zinc by grown LPE.is reported Black-Right-Pointing-Pointer It analyses the LT-PL of p-type InGaAsSb layersis analzysed as a function of incorporated zinc concentration. Black-Right-Pointing-Pointer The PL was interpreted using a model that takes into account nonparabolicity of the valence band. Black-Right-Pointing-Pointer The band-to-band transition energy can be used to estimate the hole concentration in InGaAsSb.

  17. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    Science.gov (United States)

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-01

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z1/2, EH5, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z1/2 defects was found to be 1.7 × 1013 cm-3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  18. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  19. Toward a tandem gallium phosphide on silicon solar cell through liquid phase epitaxy growth

    International Nuclear Information System (INIS)

    Kotulak, Nicole A.; Diaz, Martin; Barnett, Allen; Opila, Robert L.

    2014-01-01

    Three layers of GaP were epitaxially grown on Si(111) using liquid phase epitaxy (LPE) to demonstrate a path to fabrication of a GaP/Si tandem solar cell. Utilizing a Sn melt with Bi, Mg, and Si additives, direct epitaxial growth on a Si substrate occurred. This was followed by two further epitaxial growths, eliminating Si in the melt, with each layer decreasing in Si concentration. Scanning electron and optical microscopy and electron dispersive spectroscopy were performed in order to determine the characteristics of the growth layers. A fourth layer growth of GaP was attempted utilizing a Ga melt, and the existing structure was able to withstand contact with Ga without dissolution. Epitaxial layers of GaP with a decrease in Si concentration from 10-15% to 6%, then to less than 3%, were accomplished, thereby demonstrating a path to fabrication of a GaP/Si tandem cell using LPE. - Highlights: • A path to a GaP/Si tandem solar cell device was developed using liquid phase epitaxy. • Due to the high solubility of Si in GaP, multiple layers of GaP were grown. • Each epitaxial layer required the development of specific growth conditions

  20. Transcutaneous iontophoretic delivery of STAT3 siRNA using layer-by-layer chitosan coated gold nanoparticles to treat melanoma.

    Science.gov (United States)

    Labala, Suman; Jose, Anup; Venuganti, Venkata Vamsi Krishna

    2016-10-01

    Overexpression of signal transducer and activator of transcription 3 (STAT3) protein prevents apoptosis and enhances proliferation of melanocytes. The aim of this study was to investigate the feasibility of using layer-by-layer assembled gold nanoparticles (LbL-AuNP) as a carrier for iontophoretic delivery of STAT3 siRNA to treat melanoma. Chitosan coated AuNP (AuNP-CS) were prepared by direct reduction of HAuCl4 in the presence of chitosan. The AuNP-CS were then sequentially layered with siRNA and chitosan to form AuNP-CS/siRNA/CS. STAT3 siRNA replaced with scrambled siRNA or sodium alginate were used as controls. The average particle size and zeta-potential of the prepared LbL-AuNP were 150±10nm (PDI: 0.41±0.06) and 35±6mV, respectively. In vitro studies in B16F10 murine melanoma cells showed that AuNP-CS/siRNA/CS inhibited the cell growth by 49.0±0.6% and 66.0±0.2% at 0.25nM and 0.5nM STAT3 siRNA concentration, respectively. Fluorescence microscopy and flow cytometry studies showed a time dependent cell uptake of the LbL-AuNP up to 120min. Clathrin mediated endocytosis was found to be the predominant cell uptake mechanism for LbL-AuNP. STAT3 siRNA loaded LbL-AuNP reduced the STAT3 protein expression by 47.3% in B16F10 cells. Similarly, apoptosis assay showed 29% and 44% of early and late apoptotic events, respectively after treatment with STAT3 siRNA loaded LbL-AuNP. Confocal microscope and skin cryosections showed that application of 0.47mA/cm(2) of anodal iontophoresis enhanced the skin penetration of LbL-AuNP to reach viable epidermis. In conclusion, layer-by-layer chitosan coated AuNP can be developed as a carrier for iontophoretic delivery of STAT3 siRNA to treat melanoma. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Phase-Separated, Epitaxial, Nanostructured LaMnO3+MgO Composite Cap Layer Films for Propagation of Pinning Defects in YBa2Cu3O7-x Coated Conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wee, Sung Hun [ORNL; Shin, Junsoo [ORNL; Cantoni, Claudia [ORNL; Meyer III, Harry M [ORNL; Cook, Sylvester W [ORNL; Zuev, Yuri L [ORNL; Specht, Eliot D [ORNL; Xiong, Xuming [ORNL; Paranthaman, Mariappan Parans [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Goyal, Amit [ORNL

    2009-01-01

    Nanostructural modulation in the cap layer used in coated conductors can be a potential source for nucleating microstructural defects into the superconducting layer for improving the flux-pinning. We report on the successful fabrication of phase separated, epitaxial, nanostructured films comprised of LaMnO{sub 3} (LMO) and MgO via pulsed laser deposition (PLD) on biaxially-textured MgO metallic templates with a LMO buffer layer. Scanning Auger compositional mapping and transmission electron microscopy cross sectional images confirm the nanoscale, spatial modulation corresponding to the nanostructured phase separation in the film. YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films (0.8 {micro}m thick) grown using PLD on such phase separated, nanostructured cap layers show reduced field dependence of the critical current density with an ? value of -0.38 (in J{sub c}-H{sup -{alpha}}).

  2. Raman study of bulk-heterojunction morphology in photoactive layers treated with solvent-vapor annealing

    Science.gov (United States)

    Onojima, Norio; Ishima, Yasuhisa; Izumi, Daisuke; Takahashi, Kazuyuki

    2018-03-01

    The effect of solvent-vapor annealing (SVA) on bulk-heterojunction morphology in photoactive layers composed of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) was analyzed using Raman spectroscopy. We prepared the photoactive layers by electrostatic spray deposition (ESD) and fabricated organic photovoltaic devices with a conventional cell structure. Although postdeposition annealing can be omitted when the photoactive layer is deposited using ESD under dry condition, the surface is relatively rough owing to the existence of a number of droplet traces. The SVA treatment can eliminate such droplet traces, while excessive SVA resulted in a significant decrease in open-circuit voltage. The Raman study of the bulk-heterojunction morphology demonstrated the accumulation of P3HT molecules on the surface during SVA, which induced the recombination of photogenerated charges at the interface of the cathode/photoactive layer and thereby decreased the open-circuit voltage.

  3. Residual stresses in the surface layer of laser-treated steels

    NARCIS (Netherlands)

    Brussel, B.A. van; Hosson, J.Th.M. De

    1993-01-01

    Although laser treatment of certain metals may enhance the wear performance in general it may result equally well in large residual stresses which affect the wear performance detrimentally. Tensile stresses generated in the surface layer may lead to severe cracking of the material. This paper

  4. Zinc-air cell with KOH-treated agar layer between electrode and electrolyte containing hydroponics gel

    Energy Technology Data Exchange (ETDEWEB)

    Otham, R. [International Islamic University, Kuala Lumpur (Malaysia); Yahaya, A. H. [University of Malaya, Dept. of Chemistry, Kuala Lumpur (Malaysia); Arof, A. K. [University of Malaya, Dept. of Physics, Kuala Lumpur (Malaysia)

    2002-07-01

    Zinc-air electrochemical power sources possess the highest density compared to other zinc anode batteries, due their free and unlimited supply from the ambient air. In this experiment zinc-air cells have been fabricated employing hydroponics gel as an alternative alkaline electrolyte gelling agent. Thin KOH-treated agar layer was applied between the electrode-electrolyte interfaces which produced significant enhancement of the cells' capacities, indicating that the application of thin agar layer will improve the electrode-gelled electrolyte interfaces. Promising results have been achieved with porous zinc anode prepared from dried zinc-graphite-gelatinized agar paste; e g. a zinc-air cell employing a porous zinc anode has demonstrated a capacity of 1470 mAh rated at 0.1 A continuous discharge. 32 refs., 9 figs.

  5. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  6. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  7. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  8. Utilization of cement treated recycled concrete aggregates as base or subbase layer in Egypt

    Directory of Open Access Journals (Sweden)

    Ahmed Ebrahim Abu El-Maaty Behiry

    2013-12-01

    Full Text Available Recently, environmental protection has a great concern in Egypt where recycling of increased demolition debris has become a viable option to be incorporated into roads applications. An extensive laboratory program is conducted to study the feasibility of using recycled concrete aggregate (RCA mixed with traditional limestone aggregate (LSA which is currently being used in base or subbase applications in Egypt. Moreover, the influence of mixture variables on the mechanical properties of cement treated recycled aggregate (CTRA is investigated. Models to predict the compressive and tensile strengths based on mixture parameters are established. The results show that the adding of RCA improves the mechanical properties of the mixture where the unconfined compressive strength (UCS is taken as an important quality indicator. Variables influencing the UCS such as cement content, curing time, dry density play important roles to determine the performance of CTRA.

  9. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  10. THE IMPACT OF THE METHOD OF UNDERLAY SURFACE PROCESSING ON THE DEVELOPMENT OF DEFECTS IN EPITAXIAL COMPOSITIONS IN THE COURSE OF SILICON PHOTO-TRANSDUCERS PRODUCTION

    Directory of Open Access Journals (Sweden)

    Zoya Nikonova

    2017-06-01

    Full Text Available For the production of silicon photo-transducers (PhT the acquisition of epitaxial compositions (EC with high resistivity of working layer. One of the main parameters characterizing the quality of EC is the density of dislocation and other structural defects. Great impact on the development of defects during epitaxial growth is produced by the quality of underlay preparation before that. Multiple research of relatively thin (less than 20-30 microns epitaxial layers demonstrated, that contamination or damages of underlay surface cause the development of defects of wrapping, counterparts, macroscopic protuberances in the growing layer. During inverted epitaxy there are no high requirements as for structural perfection of epitaxial layer as far as in PhT, produced on the basis of EC for which inverted silicon structures (ISS serve with the working layer of mono-crystal substrate. Therefore in inverted epitaxy it is the problem of the development in the course of defects growth not in epitaxial layer, but in underlay, that becomes the major one. The processes of the development of defects in underlay in the course of growing thick (approximately 300 microns epitaxial layer are scarcely researched by now. Scientists sustained the idea that when using dislocation-free underlays for growing in the working layer of ISS there are dislocations with the density of 103 sm-2 and more. Thus, investigation of the factors that determine the development of dislocations in underlay in the process of epitaxy, has now gained great practical value.

  11. Microstructures and phase formations in the surface layer of an AISI D2 steel treated with pulsed electron beam

    International Nuclear Information System (INIS)

    Zou, J.X.; Grosdidier, T.; Zhang, K.M.; Gao, B.; Hao, S.Z.; Dong, C.

    2007-01-01

    The nanostructures and metastable phase transformations in the surface layer of an AISI D2 steel treated with high current pulsed electron beam (HCPEB) were investigated. The surface structure is marked by two distinct features, i.e. the formation of sub-micrometer fine austenite γ grains (50-150 nm), and the disappearance of carbides via dissolution and crater eruption. The γ phase directly grows from the melt and is retained down to room temperature. Although the cooling rate is as high as 10 7 K/s in our case, the martensitic transformation could completely be suppressed. Such an effect is due to the increased stability of the austenite phase through grain refinement and chemistry modification

  12. Epitaxial semiconductor quantum wires.

    Science.gov (United States)

    Wu, J; Chen, Y H; Wang, Z G

    2008-07-01

    The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

  13. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  14. Graphene growth on h-BN by molecular beam epitaxy

    OpenAIRE

    García Martínez, Jorge Manuel; Pinczuk, Aron

    2013-01-01

    Graphene growth on dielectric substrates has potential to enable new kinds of devices and applications. We explore graphene growth via direct depositing carbon in a MBE environment on different dielectric substrates, such as h-BN and sapphire. The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated [1]. Formation of single-layer graphene is clearly apparent in Raman spectra which disp...

  15. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  16. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  17. Efficient Yttrium(III) Chloride-Treated TiO2Electron Transfer Layers for Performance-Improved and Hysteresis-Less Perovskite Solar Cells.

    Science.gov (United States)

    Li, Minghua; Huan, Yahuan; Yan, Xiaoqin; Kang, Zhuo; Guo, Yan; Li, Yong; Liao, Xinqin; Zhang, Ruxiao; Zhang, Yue

    2018-01-10

    Hybrid organic-inorganic metal halide perovskite solar cells have attracted widespread attention, owing to their high performance, and have undergone rapid development. In perovskite solar cells, the charge transfer layer plays an important role for separating and transferring photogenerated carriers. In this work, an efficient YCl 3 -treated TiO 2 electron transfer layer (ETL) is used to fabricate perovskite solar cells with enhanced photovoltaic performance and less hysteresis. The YCl 3 -treated TiO 2 layers bring about an upward shift of the conduction band minimum (E CBM ), which results in a better energy level alignment for photogenerated electron transfer and extraction from the perovskite into the TiO 2 layer. After optimization, perovskite solar cells based on the YCl 3 -treated TiO 2 layers achieve a maximum power conversion efficiency of about 19.99 % (19.29 % at forward scan) and a steady-state power output of about 19.6 %. Steady-state and time-resolved photoluminescence measurements and impedance spectroscopy are carried out to investigate the charge transfer and recombination dynamics between the perovskite and the TiO 2 electron transfer layer interface. The improved perovskite/TiO 2 ETL interface with YCl 3 treatment is found to separate and extract photogenerated charge rapidly and suppress recombination effectively, which leads to the improved performance. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko

    2012-01-01

    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  19. Magnetically induced martensite transition in freestanding epitaxial Ni-Mn-Ga films

    Czech Academy of Sciences Publication Activity Database

    Heczko, Oleg; Thomas, M.; Niemann, R.; Schultz, L.; Fähler, S.

    2009-01-01

    Roč. 94, č. 15 (2009), 152513/1-152513/3 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100520 Keywords : epitaxial growth * Ni-Mn-Ga alloys * magnetic epitaxial layers * magnetic transitions * martensitic transformations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.554, year: 2009 http://link.aip.org/link/?APPLAB/94/152513/1

  20. Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template

    International Nuclear Information System (INIS)

    Niu, G.; Largeau, L.; Saint-Girons, G.; Vilquin, B.; Cheng, J.; Mauguin, O.; Hollinger, G.

    2010-01-01

    This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd 2 O 3 crystalline template. A smooth two-dimensional Ge layers is obtained from the coalescence of initially three-dimensional Ge islands grown in the Volmer-Weber mode. Ge takes its bulk lattice parameter at the very early stages of its growth. A detailed x-ray pole figure analysis reveals that the epitaxial relationship between the layers and the Si substrate is [1-10]Ge(111)||-110]Gd 2 O 3 (111)||[1-10]Si(111) and that microtwins are formed in the Ge layer.

  1. Multifunctional epitaxial systems on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968 (United States); Prater, John Thomas [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-09-15

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin

  2. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

    Directory of Open Access Journals (Sweden)

    Yu-Hua Liu

    2017-11-01

    Full Text Available Gold-nanoparticle (Au-NP non-volatile memories (NVMs with low-damage CF4 plasma treatment on the blocking oxide (BO layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS, while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS. In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs and the tunneling oxide (TO layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  3. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer.

    Science.gov (United States)

    Liu, Yu-Hua; Kao, Chyuan-Haur; Cheng, Tsung-Chin; Wu, Chih-I; Wang, Jer-Chyi

    2017-11-10

    Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si-F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF₄ plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 10⁴ s and a nearly negligible increase in charge loss at 85 °C of the CF₄-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  4. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    Energy Technology Data Exchange (ETDEWEB)

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  5. Etching AlAs with HF for epitaxial lift-off applications

    NARCIS (Netherlands)

    Voncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Peters, T.P.J.; Bruin, B. de; Klaassen, A.; Kelly, J.J.

    2004-01-01

    The epitaxial lift- off process allows the separation of a thin layer of III/ V material from the substrate by selective etching of an intermediate AlAs layer with HF. In a theory proposed for this process, it was assumed that for every mole of AlAs dissolved three moles of H-2 gas are formed. In

  6. Ultrahigh-vacuum CVD Epitaxy of silicon and GexSi1-x

    Science.gov (United States)

    Racanelli, Marco; Greve, David W.

    1991-10-01

    The growth of epitaxial layers of germanium-silicon alloys is important for advanced semiconductor devices such as heterojunction bipolar transistors. This article explains the principles behind ultrahigh-vacuum chemical vapor deposition (UHV/CVD). This growth technique is capable of growing device-quality layers at low temperatures and, in addition, has a potential for high productivity in manufacturing.

  7. Epitaxial hexagonal materials on IBAD-textured substrates

    Science.gov (United States)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  8. Crystallization engineering as a route to epitaxial strain control

    Directory of Open Access Journals (Sweden)

    Andrew R. Akbashev

    2015-10-01

    Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  9. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  10. Well-posedness of a two-scale model for liquid phase epitaxy with elasticity

    Science.gov (United States)

    Kutter, Michael; Rohde, Christian; Sändig, Anna-Margarete

    2017-07-01

    Epitaxy, a special form of crystal growth, is a technically relevant process for the production of thin films and layers. It can generate microstructures of different morphologies, such as steps, spirals or pyramids. These microstructures are influenced by elastic effects in the epitaxial layer. There are different epitaxial techniques, one being liquid phase epitaxy. Thereby, single particles are deposited out of a supersaturated liquid solution on a substrate where they contribute to the growth process. This article studies a two-scale model including elasticity, introduced in Eck et al. (Eur Phys J Special Topics 177:5-21, 2009) and extended in Eck et al. (2006). It consists of a macroscopic Navier-Stokes system and a macroscopic convection-diffusion equation for the transport of matter in the liquid, and a microscopic problem that combines a phase field approximation of a Burton-Cabrera-Frank model for the evolution of the epitaxial layer, a Stokes system for the fluid flow near the layer and an elasticity system for the elastic deformation of the solid film. Suitable conditions couple the single parts of the model. As the main result, existence and uniqueness of a solution are proven in suitable function spaces. Furthermore, an iterative solving procedure is proposed, which reflects, on the one hand, the strategy of the proof of the main result via fixed point arguments and, on the other hand, can be the basis for a numerical algorithm.

  11. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

    Directory of Open Access Journals (Sweden)

    K.-H. Cho

    2013-10-01

    Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

  12. SiC epitaxy growth using chloride-based CVD

    International Nuclear Information System (INIS)

    Henry, Anne; Leone, Stefano; Beyer, Franziska C.; Pedersen, Henrik; Kordina, Olof; Andersson, Sven; Janzén, Erik

    2012-01-01

    The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

  13. First-principles design of epitaxial perovskite heterostructures

    Science.gov (United States)

    Neaton, J. B.

    2003-03-01

    Experimental capabilities now allow layer-by-layer epitaxial growth of perovskite-based oxides with atomic-level control. This makes possible a wide range of novel multifunctional oxide heterostructures, composite systems which promise to play an important role in many contemporary applications. The phenomenology of oxides grown in this geometry is rather complex, and expected to be influenced by composition, interfacial structure and chemistry, internal fields arising from non-bulk electrical boundary conditions, and the considerable strains associated with coherent epitaxy. In this talk, the respective roles of each of these features in selected artificial heterostructures is investigated quantitatively using first-principles density-functional theory within the local density approximation. First, the structure, polarization, phonons, and static dielectric response of several standard perovskite materials, such as BaTiO_3, SrTiO_3, and PbTiO_3, are mapped as as a function of epitaxial misfit strains up to 3%. These results are then used to interpret and design properties of paraelectric/ferroelectric superlattices, such as BaTiO_3/SrTiO3 and PbTiO_3/SrTiO_3; inversion-symmetry breaking heterostructures, such as LaAlO_3/SrTiO_3; and multiferroic thin films, such as BiFeO_3. Comparisons with recent experiments, and implications for future work, are discussed in each case.

  14. Molecular beam epitaxy of Cd3As2 on a III-V substrate

    Directory of Open Access Journals (Sweden)

    Timo Schumann

    2016-12-01

    Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

  15. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  16. Epitaxial growth of Fe/BaTiO3 heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brivio, S., E-mail: m.gooley@elsevier.com [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Rinaldi, C.; Petti, D.; Bertacco, R. [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Sanchez, F. [Institut de Ciencia de Materials de Barcelona, Consejo Superior de Investigaciones Cientificas, Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Catalunya (Spain)

    2011-06-30

    The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO{sub 3}(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO{sub 3} with 45 deg. rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.

  17. First principles studies of semiconductor epitaxial growth

    Science.gov (United States)

    Tsai, Bao-Liang

    This thesis conducts investigations mainly on the structures, energetics, and recations of semiconductor as well as oxide surfaces using first principles cluster model approach. The first part of the research work addresses the issues in the epitaxial growth of Hgsb{1-x}Cdsb{x}Te (MCT) materials. Hg divalent compounds were studied thoroughly using a variety of quantum chemical methods in order to understand the energetics of Hg precursors for growth. The (001) growth surfaces were then examined in detail using cluster model calculations. Based on these results, a novel metal-organic molecular beam epitaxial (MOMBE) growth strategy with favorable energetics for growing MCT using Hsb2C=CH-CHsb2-Hg-Cequiv C-CHsb3 is proposed. It is hoped that with this new growth strategy, the Hg vacancy and p-doping problems that currently exist in growth can be avoided. The second part of the thesis discusses the molecular beam epitaxial (MBE) growth of cubic GaN on the (001) surface using various N sources. Surface reconstructions and the interactions of gas-phase atomic and molecular nitrogens with the surface were elucidated using cluster models. Using these results an energy phase diagram for the growth of GaN has been constructed. It suggests that excited state molecular Nsb2\\ (sp3Sigmasbsp{u}{+}) is the most favorable of all N species for growth of high quality GaN because it can undergo a dissociative chemisorption process. Ground state atomic N\\ (sp4S) is also good for growth. The doublet excited states N\\ (sp2D and sp2P) might cause surface N abstraction, leading to N vacancies in the material. Finally, a Fe(OH)sb3(Hsb2O)sb3 GVB cluster model of crystalline alpha-Fesb2Osb3 was developed. This simple model can describe the local geometry and bonding of Fe in the bulk oxide. Using quantum mechanical calculations, the orientation of the oleic imidazoline (OI) molecule bonding to the oxide surface has been determined. OI class of molecules are used extensively for corrosion

  18. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  19. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

    Energy Technology Data Exchange (ETDEWEB)

    Antonov, A. V.; Kudryavtsev, K. E., E-mail: konstantin@ipmras.ru; Shengurov, D. V.; Shmagin, V. B.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2013-11-15

    The photocurrent spectra of Si:Er/Si epitaxial diode structures are studied. It is shown that the nature of the sub-band-gap photoresponse is determined by the epitaxial growth temperature of the Si:Er layer and is not related to the composition of erbium emission centers. It is found that the absorption of light with photon energies lower than the energy-gap of silicon is determined by impurity-defect complexes that appear during the growth of the epitaxial layer and form a quasi-continuous spectrum of states in the energy gap of silicon. It is assumed that these impurity centers are not related to optically active erbium centers and are not involved in excitation-energy transfer to the rare-earth impurity.

  20. Semiconductor Nanowires: Epitaxy and Applications

    OpenAIRE

    Mårtensson, Thomas

    2008-01-01

    Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. Heteroepitaxial growth of III-V nanowires on silicon substrates was demonstrated. This may enable direct band gap materials for optoelectronic devices, as well as high-mobility, low-contact resis...

  1. Highly doped layer for tunnel junctions in solar cells

    Science.gov (United States)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  2. Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

    KAUST Repository

    la O', Gerardo Jose

    2010-06-22

    Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

  3. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    Science.gov (United States)

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  4. ORGANIC MATTER AND CARBON MANAGEMENT INDEX OF SOIL TREATED WITH COMPOSTED AND NON-COMPOSTED LAYERED RESIDUES

    Directory of Open Access Journals (Sweden)

    JULIANA AUGUSTA MOURA

    2017-01-01

    Full Text Available The use of organic residues and compost is a common practice to improve soil quality and content of organic matter. In this study, the labile and stable fractions of soil organic matter were evaluated after application of layers of fresh (non-composted or composted organic residues in a 6-year-old citrus orchard. The experiment was set up as a randomized block design, with 6 treatments: control without NPK, control with NPK, non-composted organic residue (NCOR, with and without NPK, and composted organic residue (humus, with and without NPK, with three replicates. The treatments were applied under the plant canopy. Soil samples were collected from the 0-0.05, 0.05-0.10, and 0.10-0.15 m layers. There were increases of 10.3, 22.4, 16.3, and 37.1 % in the organic carbon contents of the surface soil for the treatments using NCOR without NPK, NCOR with NPK, humus with NPK, and humus without NPK, respectively. The organic carbon contents of the labile fraction varied from 1.0 to 12.8 g kg-1, representing between 8 and 62 % of the total carbon. The carbon concentrations in the stable fraction varied from 3.1 to 9.7 g kg-1, representing between 38 and 92 % of the total carbon, and this was the dominant fraction for most of the treatments.

  5. Chemical solution seed layer for rabits tapes

    Science.gov (United States)

    Goyal, Amit; Paranthaman, Mariappan; Wee, Sung-Hun

    2014-06-10

    A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

  6. Mapping cation diffusion through lattice defects in epitaxial oxide thin films on the water-soluble buffer layer Sr3Al2O6 using atomic resolution electron microscopy

    Science.gov (United States)

    Baek, David J.; Lu, Di; Hikita, Yasuyuki; Hwang, Harold Y.; Kourkoutis, Lena F.

    2017-09-01

    Recent advances in the synthesis of oxide thin films have led to the discovery of novel functionalities that are not accessible in bulk structures. However, their physical properties are vulnerable to the presence of crystal defects, which can give rise to structural, chemical, and electronic modifications. These issues are central to optimizing the opportunities to create freestanding oxide films using the recently developed buffer layer Sr3Al2O6, which is soluble in room temperature water. To evaluate the general possibility to create atomic scale freestanding oxide heterostructures, it is critical to understand the formation, structure, and role of defects as this buffer layer is employed. Here, using aberration-corrected scanning transmission electron microscopy in combination with electron energy loss spectroscopy, we reveal cation segregation and diffusion along crystal defects that form during growth of an oxide multilayer structure on the Sr3Al2O6 buffer layer. We demonstrate that mass transport of film material can occur either through open dislocation core channels or site-specifically in the crystal lattice, causing local variations in stoichiometry. However, by reducing the thermal driving force for diffusion during growth, we suppress the role of extended defects as cation segregation sites, thereby retaining the inherent properties of the overlaying film.

  7. Electro-optic properties of epitaxial Sr0.6Ba0.4Nb2O6 films grown on MgO substrates using LixNi2-xO buffer layer

    Science.gov (United States)

    Li, X. T.; Du, P. Y.; Ye, H.; Mak, C. L.; Wong, K. H.

    2008-08-01

    Textured LixNi2-xO (LNO) thin films have been fabricated on (001)MgO substrates by pulsed laser deposition technique. The as-deposited LNO films shows a conductivity of 2.5×10-3 Ω m and possess a transmittance of about 35% in the visible region. Subsequent deposition of Sr0.6Ba0.4Nb2O6 (SBN60) thin film on these LNO-coated MgO substrates resulted in a textured SBN layer with a orientation perpendicular to the substrate plane. Phi scans on the (221) plane of the SBN layer indicated that the films have two in-plane orientations with respect to the substrate. The SBN unit cells were rotated in the plane of the film by ± 8.2° as well as ± 45° with respect to the LNO/MgO substrate. Besides the highly (00l)-orientation, the SBN films also exhibited a dense microstructure as shown by scanning electron microscopy. The electro-optic coefficient (r33) of the SBN film was measured to be 186 pm/V. On the basis of our results, we have demonstrated that the LNO film can be used as a buffer layer as well as a transparent bottom electrode for waveguide applications. The SBN/LNO heterostructure is also a suitable candidate for integrated electro-optics devices.

  8. Mapping cation diffusion through lattice defects in epitaxial oxide thin films on the water-soluble buffer layer Sr3Al2O6 using atomic resolution electron microscopy

    Directory of Open Access Journals (Sweden)

    David J. Baek

    2017-09-01

    Full Text Available Recent advances in the synthesis of oxide thin films have led to the discovery of novel functionalities that are not accessible in bulk structures. However, their physical properties are vulnerable to the presence of crystal defects, which can give rise to structural, chemical, and electronic modifications. These issues are central to optimizing the opportunities to create freestanding oxide films using the recently developed buffer layer Sr3Al2O6, which is soluble in room temperature water. To evaluate the general possibility to create atomic scale freestanding oxide heterostructures, it is critical to understand the formation, structure, and role of defects as this buffer layer is employed. Here, using aberration-corrected scanning transmission electron microscopy in combination with electron energy loss spectroscopy, we reveal cation segregation and diffusion along crystal defects that form during growth of an oxide multilayer structure on the Sr3Al2O6 buffer layer. We demonstrate that mass transport of film material can occur either through open dislocation core channels or site-specifically in the crystal lattice, causing local variations in stoichiometry. However, by reducing the thermal driving force for diffusion during growth, we suppress the role of extended defects as cation segregation sites, thereby retaining the inherent properties of the overlaying film.

  9. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics.

    Science.gov (United States)

    Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K

    2013-01-01

    Epitaxial lift-off process enables the separation of III-V device layers from gallium arsenide substrates and has been extensively explored to avoid the high cost of III-V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an epitaxial lift-off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading to direct reuse of the gallium arsenide substrate. The successful direct substrate reuse is confirmed by the performance comparison of solar cells grown on the original and the reused substrates. Following the features of our epitaxial lift-off process, a high-throughput technique called surface tension-assisted epitaxial lift-off was developed. In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and flexible substrates, we also demonstrate devices, including light-emitting diode and metal-oxide-semiconductor capacitor, first built on thin active layers and then transferred to secondary substrates.

  10. Re-use of stabilised flue gas ashes from solid waste incineration in cement-treated base layers for pavements

    DEFF Research Database (Denmark)

    Cai, Zuansi; Jensen, Dorthe Lærke; Christensen, Thomas Højlund

    2003-01-01

    Fly ash from coal-burning power plants has been used extensively as a pozzolan and fine filter in concrete for many years. Laboratory experiments were performed investigating the effect of substituting the coal-based fly ash with chemically stabilised flue gas ashes (FGA) from waste incineration...... would teach during a 100-year period from a 0.5 m thick concrete stab exposed to water on one side. Leaching of the common ions Ca, Cl, Na and SO4 was increased 3-20 times from the specimens with chemically stabilised flue gas ashes from waste incineration. However, the quantities leached were still...... modest. These experiments suggest that FGA from waste incineration after Ferrox-treatment could be re-used in CTB without compromising the strength and teaching from the base layer....

  11. Strain-accelerated HF etching of AlAs for epitaxial lift-off

    NARCIS (Netherlands)

    Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Niftrik, A.T.J. van; Larsen, P.K.

    2004-01-01

    Epitaxial lift-off (ELO) is a process which allows for the separation of a single crystalline III/V thin film or device from the substrate it was deposited on. This process is based on the selective etching of an intermediate AlAs release layer in an aqueous HF solution. The lateral etch rate of the

  12. Photoresponse properties of BaSi{sub 2} epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp; Saito, Takanobu; Toh, Katsuaki; Okada, Atsushi; Khan, Muhammad Ajmal

    2011-10-03

    We have successfully grown 360-nm-thick undoped n-BaSi{sub 2} epitaxial layers on the n{sup +}-BaSi{sub 2}/p{sup +}-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi{sub 2} epitaxial layers on a p-Si(111) substrate.

  13. Three-dimensional lattice matching of epitaxially embedded nanoparticles

    Science.gov (United States)

    May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

    2017-02-01

    For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (ɛIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both ɛIP* and out-of-plane lattice mismatch (ɛOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering ɛIP* and ɛOP* , the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (ɛIP* = ɛOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (ɛIP* = - 0.072 and ɛOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to ɛOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring ɛOP*.

  14. Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

    High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

  15. Reliability of new poly (lactic-co-glycolic acid) membranes treated with oxygen plasma plus silicon dioxide layers for pre-prosthetic guided bone regeneration processes.

    Science.gov (United States)

    Castillo-Dalí, G; Castillo-Oyagüe, R; Batista-Cruzado, A; López-Santos, C; Rodríguez-González-Elipe, A; Saffar, J-L; Lynch, C-D; Gutiérrez-Pérez, J-L; Torres-Lagares, D

    2017-03-01

    The use of cold plasmas may improve the surface roughness of poly(lactic-co-glycolic) acid (PLGA) membranes, which may stimulate the adhesion of osteogenic mediators and cells, thus accelerating the biodegradation of the barriers. Moreover, the incorporation of metallic-oxide particles to the surface of these membranes may enhance their osteoinductive capacity. Therefore, the aim of this paper was to evaluate the reliability of a new PLGA membrane after being treated with oxygen plasma (PO2) plus silicon dioxide (SiO2) layers for guided bone regeneration (GBR) processes. Circumferential bone defects (diameter: 11 mm; depth: 3 mm) were created on the top of eight experimentation rabbits' skulls and were randomly covered with: (1) PLGA membranes (control), or (2) PLGA/PO2/SiO2 barriers. The animals were euthanized two months afterwards. A micromorphologic study was then performed using ROI (region of interest) colour analysis. Percentage of new bone formation, length of mineralised bone, concentration of osteoclasts, and intensity of ostheosynthetic activity were assessed and compared with those of the original bone tissue. The Kruskal-Wallis test was applied for between-group com Asignificance level of a=0.05 was considered. The PLGA/PO2/SiO2 membranes achieved the significantly highest new bone formation, length of mineralised bone, concentration of osteoclasts, and ostheosynthetic activity. The percentage of regenerated bone supplied by the new membranes was similar to that of the original bone tissue. Unlike what happened in the control group, PLGA/PO2/SiO2 membranes predominantly showed bone layers in advanced stages of formation. The addition of SiO2 layers to PLGA membranes pre-treated with PO2 improves their bone-regeneration potential. Although further research is necessary to corroborate these conclusions in humans, this could be a promising strategy to rebuild the bone architecture prior to rehabilitate edentulous areas.

  16. Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Norton, D.P.

    1993-01-01

    Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

  17. Epitaxial graphene electronic structure and transport

    International Nuclear Information System (INIS)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

    2010-01-01

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  18. Epitaxial graphene electronic structure and transport

    Energy Technology Data Exchange (ETDEWEB)

    De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N [School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Stroscio, Joseph A [Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899 (United States); Haddon, Robert [Center for Nanoscale Science and Engineering, Departments of Chemistry and Chemical and Environmental Engineering, University of California, Riverside, CA 92521 (United States); Piot, Benjamin; Faugeras, Clement; Potemski, Marek [LNCMI -CNRS, Grenoble, 38042 Cedex 9 (France); Moon, Jeong-Sun, E-mail: walt.deheer@physics.gateh.ed [HRL Laboratories LLC, Malibu, CA 90265 (United States)

    2010-09-22

    Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

  19. GaAs/Ge/Si epitaxial substrates: Development and characteristics

    Directory of Open Access Journals (Sweden)

    Yury Buzynin

    2017-01-01

    Full Text Available We developed high quality 2-inch GaAs/Ge/Si (100 epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2∙105 cm-2 and the surface RMS roughness value was under 1 nm.

  20. Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

    DEFF Research Database (Denmark)

    Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

    2012-01-01

    High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

  1. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  2. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    Science.gov (United States)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  3. Epitaxial growth of Ge strain relaxed buffer on Si with low threading dislocation density

    OpenAIRE

    Abedin, Ahmad; Asadollahi, Ali; Garidis, Konstantinos; Hellström, Per-Erik; Östling, Mikael

    2016-01-01

    Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si substrate by reduced pressure chemical vapor deposition. The surface topography measured by AFM shows that the strain relaxation occurred through pit formation which resulted in freezing the defects at Ge/Si interface. Moreover a lower threading dislocation density compared to conventional strain relaxed Ge buffers on Si was observed. We show that by growing the first layer at temperatures below ...

  4. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  5. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  6. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  7. Double epitaxy as a paradigm for templated growth of highly ordered three-dimensional mesophase crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Yongsoon; Tao, Jinhui; Arey, Bruce W.; Wang, Chongmin; Exarhos, Gregory J.; De Yoreo, James J.; Sushko, Maria L.; Liu, Jun

    2016-08-30

    Molecular templating and self-assembly are fundamental mechanisms for controlling the morphology of biominerals, while in synthetic two-dimensional layered materials similar levels of control over materials structure can be achieved through the epitaxial relationship with the substrate. In this study these two concepts are combined to provide an approach for the nucleation and growth of three-dimensional ordered mesophases on solid surfaces. A combined experimental and theoretical study revealed how atomic ordering of the substrate controls the structure of surfactant template and the orientation and morphology of the epitaxially grown inorganic material. Such dual epitaxial relationship between the substrate, surfactant template and inorganic mesophase gives rise to a highly ordered porous mesophase with a well-defined cubic lattice of pores. The level of control over material’s three-dimensional architecture achieved in this one-step synthesis is reminiscent to that in biomineralization.

  8. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H. (CNRS-UMR); (CEAS); (GIT)

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  9. Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

    Science.gov (United States)

    Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

    2017-11-01

    We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

  10. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ {11}overline{{2}} {0} ]- and [0001]-Oriented Silicon Carbide Substrates

    Science.gov (United States)

    Bishop, S. M.; Reynolds, C. L.; Liliental-Weber, Z.; Uprety, Y.; Zhu, J.; Wang, D.; Park, M.; Molstad, J. C.; Barnhardt, D. E.; Shrivastava, A.; Sudarshan, T. S.; Davis, R. F.

    2007-04-01

    The polytype and surface and defect microstructure of epitaxial layers grown on 4H( {11}overline{{2}} {0} ), 4H(0001) on-axis, 4H(0001) 8° off-axis, and 6H(0001) on-axis substrates have been investigated. High-resolution x-ray diffraction (XRD) revealed the epitaxial layers on 4H( {11}overline{{2}} {0} ) and 4H(0001) 8° off-axis to have the 4H-SiC (silicon carbide) polytype, while the 3C-SiC polytype was identified for epitaxial layers on 4H(0001) and 6H(0001) on-axis substrates. Cathodoluminescence (CL), Raman spectroscopy, and transmission electron microscopy (TEM) confirmed these results. The epitaxial surface of 4H( {11}overline{{2}} {0} ) films was specular with a roughness of 0.16-nm root-mean-square (RMS), in contrast to the surfaces of the other epitaxial layer-substrate orientations, which contained curvilinear boundaries, growth pits (˜3 × 104 cm-2), triangular defects >100 μm, and significant step bunching. Molten KOH etching revealed large defect densities within 4H( {11}overline{{2}} {0} ) films that decreased with film thickness to ˜106 cm-2 at 2.5 μm, while cross-sectional TEM studies showed areas free of defects and an indistinguishable film-substrate interface for 4H( {11}overline{{2}} {0} ) epitaxial layers.

  11. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...

  12. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

    Science.gov (United States)

    Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

    2016-05-11

    We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

  13. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  14. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  15. Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy

    International Nuclear Information System (INIS)

    Hai-Chao, Huang; Hai-Bo, Wang; Dong-Hang, Yan

    2010-01-01

    We investigate the heterojunction effect between para-sexiphenyl (p-6P) and copper phthalocyanine (CuPc) using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed. (condensed matter: structure, mechanical and thermal properties)

  16. Silicon thin film growth by low temperature liquid phase epitaxy for photovoltaic applications

    International Nuclear Information System (INIS)

    Abdo, F.

    2007-03-01

    In this thesis is presented an economic, clean and innovating way to carry out silicon substrate in thin layer for photovoltaic applications. It is based on layer growth by low temperature liquid phase epitaxy on silicon substrates embrittled by ion implantation. The aim of this work is to find experimental conditions to decrease the epitaxy temperature (≤800 C instead of 1050 C) while conserving a relatively high growth velocity. An innovating method has been implemented; it consists to use two different baths: the first one Al-Sn-Si allows to de-oxidize the silicon substrate surface without using hydrogen and the second one containing Sn-Si allows the growth of a thick layer of silicon. Uniform layers of a thickness of 15μm have been obtained after three hours of growth. Thermodynamic studies exploiting the phase diagrams of ternary or quaternary mixtures have been carried out to reach high growth velocity. Tin and copper based alloys have been chosen, tin for lowering the temperature and copper for increasing the silicon solubility. Layers of 30 μm have been obtained after two hours of growth. It has been shown too that this epitaxy step could be compatible with the technology of ion implantation embrittlement. (O.M.)

  17. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...... plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design...... of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires...

  18. Oxygen Switching of the Epitaxial Graphene-Metal Interaction

    DEFF Research Database (Denmark)

    Larciprete, Rosanna; Ulstrup, Søren; Lacovig, Paolo

    2012-01-01

    in the valence band are removed, and the spectrum of strongly hole-doped, quasi free-standing graphene with a single Dirac cone around the K point is observed. The oxygen can be deintercalated by annealing, and this process takes place at around T = 600 K, in a rather abrupt way. A small amount of carbon atoms......Using photoemission spectroscopy techniques, we show that oxygen intercalation is achieved on an extended layer of epitaxial graphene on Ir(111), which results in the “lifting” of the graphene layer and in its decoupling from the metal substrate. The oxygen adsorption below graphene proceeds...... as on clean Ir(111), giving only a slightly higher oxygen coverage. Upon lifting, the C 1s signal shows a downshift in binding energy, due to the charge transfer to graphene from the oxygen-covered metal surface. Moreover, the characteristic spectral signatures of the graphenesubstrate interaction...

  19. Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te

    International Nuclear Information System (INIS)

    Lee, S.B.; Magel, L.K.; Tang, M.F.S.; Stevenson, D.A.; Tregilgas, J.H.; Goodwin, M.W.; Strong, R.L.

    1990-01-01

    We report on the characterization of mercury cadmium telluride (Hg 1-x Cd x Te) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg 1-x Cd x Te to larger bandgap material. The crystal perfection is evaluated using defect etching, electron beam and electrolyte electroreflectance (EBER and EER), and Rutherford backscattering spectrometry (RBS). Hall measurements are used to measure carrier densities and mobilities. Surface concentrations and concentration profiles are measured for the ISOVPE grown layers by transmission Fourier transform infrared spectroscopy (FTIR) and electron-probe microanalysis (EPMA) to establish quantitative informations about composition control. Metal--insulator-semiconductor (MIS) structures were made and the properties important to device performance such as compositional uniformity, storage time, and carrier concentration are measured. The ISOVPE layers are compared in quality to films grown by other methods and show promise for MIS devices

  20. Molecular beam epitaxy of single crystal colossal magnetoresistive material

    International Nuclear Information System (INIS)

    Eckstein, J.N.; Bozovic, I.; Rzchowski, M.; O'Donnell, J.; Hinaus, B.; Onellion, M.

    1996-01-01

    The authors have grown films of (LaSr)MnO 3 (LSMO) and (LaCa)MnO 3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T -1

  1. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  2. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Energy Technology Data Exchange (ETDEWEB)

    Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

    2016-03-07

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  3. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Science.gov (United States)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G. B. V. S.; Avasthi, D. K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-05-01

    In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 1013 ions/cm2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications.

  4. Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

    International Nuclear Information System (INIS)

    Fromm, F; Wehrfritz, P; Seyller, Th; Hundhausen, M

    2013-01-01

    Raman spectroscopy is frequently used to study the properties of epitaxial graphene grown on silicon carbide (SiC). In this work, we present a confocal micro-Raman study of epitaxial graphene on SiC(0001) in top-down geometry, i.e. in a geometry where both the primary laser light beam as well as the back-scattered light is guided through the SiC substrate. Compared to the conventional top-up configuration, in which confocal micro-Raman spectra are measured from the air side, we observe a significant intensity enhancement in top-down configuration, indicating that most of the Raman-scattered light is emitted into the SiC substrate. The intensity enhancement is explained in terms of dipole radiation at a dielectric surface. The new technique opens the possibility to probe graphene layers in devices where the graphene layer is covered by non-transparent materials. We demonstrate this by measuring gate-modulated Raman spectra of a top-gated epitaxial graphene field effect device. Moreover, we show that these measurements enable us to disentangle the effects of strain and charge on the positions of the prominent Raman lines in epitaxial graphene on SiC. (paper)

  5. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO 2 and NH 3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10 13 ions/cm 2 ). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  6. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  7. Crystal synthesis and effects of epitaxial perovskite manganite underlayer conditions on characteristics of ZnO nanostructured heterostructures.

    Science.gov (United States)

    Liang, Yuan-Chang; Hu, Chia-Yen; Zhong, Hua; Wang, Jyh-Liang

    2013-03-21

    This study presents the synthesis of high-density aligned wurtzite ZnO nanostructures using thermal evaporation on perovskite (La,Sr)MnO3(LSMO) epitaxy to form a heterostructure without the assistance of metallic catalysis. LSMO epitaxial films are RF-sputtered with various crystal qualities to examine the correlation between the interface and electrical characteristics of the heterostructures. The ZnO nanostructures-LSMO epitaxial heterostructures show electrical rectifying behavior without inserting an ultrathin insulating layer at the hetero-interface. Misfit strain, intrinsic strain, and crystal defects are major factors in causing a phase separation in the as-prepared manganite LSMO epitaxial films. The coexistence of a charge-ordered insulating domain and a ferromagnetic metallic domain causes inhomogeneous electrical contact at the ZnO-LSMO heterointerfaces, further deteriorating the junction characteristics. A high-temperature annealing procedure and moderate LSMO epitaxy film thickness are required for the construction of an efficient ZnO nanostructures-LSMO epitaxy junction.

  8. Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

    International Nuclear Information System (INIS)

    Norton, D.P.; Park, C.; Prouteau, C.

    1998-04-01

    The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

  9. Mirrorless buried waveguide laser in monoclinic double tungstates fabricated by a novel combination of ion milling and liquid phase epitaxy.

    Science.gov (United States)

    Bolaños, Western; Carvajal, Joan J; Mateos, Xavier; Murugan, Ganapathy Senthil; Subramanian, Ananth Z; Wilkinson, James S; Cantelar, Eugenio; Jaque, Daniel; Lifante, Ginés; Aguiló, Magdalena; Díaz, Francisco

    2010-12-20

    Buried channel waveguides were fabricated by liquid phase epitaxial growth of a lattice-matched KY(0.58)Gd(0.22)Lu(0.17)Tm(0.03)(WO4)2 film on a microstructured KY(WO4)2 substrate. Channels were transferred to the substrates by standard photolithography and Ar-ion milling. The bottom and sidewalls of the milled channels were smooth enough (rms roughness = 70 nm and 20 nm, respectively) to favour the epitaxial growth of the active layer without defects at the boundary of substrate/epitaxial layer. The refractive index contrast was sufficient to enable light confinement and guided modes with low scattering losses were observed at wavelengths between 1440 nm and 1640 nm. CW laser operation at 1840 nm at room temperature was observed with feedback provided only by Fresnel reflection at the end faces, with slope efficiencies of 4% and 9% for TE and TM polarizations, respectively.

  10. Fabrication and characterization of coupled ensembles of epitaxial quantum dots and metal nanoparticles supporting localized surface plasmons

    Science.gov (United States)

    Kosarev, Alexander; Chaldyshev, Vladimir; Toropov, Nikita; Gladskikh, Igor; Gladskikh, Polina; Baryshnikova, Kseniia; Preobrazhenskiy, Valeriy; Putyato, Michael; Semyagin, Boris; Vartanyan, Tigran

    2017-08-01

    A stack of five layers of epitaxial InAs QDs with GaAs barriers was grown by molecular-beam epitaxy. The upper layer of QDs was capped by 3nm-GaAs/3nm-AlAs/4nm-GaAs layer sequence. Then, a thin silver layer was added via physical vapor deposition. After annealing isolated silver nanoparticles were formed above the layer of buried InAs quantum dots. We studied interplay of the exciton resonance in InAs QDs and plasmon resonance in Ag nanoparticles. In particular, we observed more than twofold enhancement of the exciton photoluminescence intensity from the InAs QDs when they were coupled to the silver nanoparticles.

  11. Zinc-induced lattice contraction in metalorganic vapor phase epitaxy grown AlGaInP

    International Nuclear Information System (INIS)

    Li, Xinyi; Zhang, Jianqin; Zhang, Wei; Lu, Hongbo; Zhou, Dayong

    2015-01-01

    p-Type Zn doped (Al x Ga 1-x ) 0.5 In 0.5 P layers have been grown on (001) GaAs substrates by metalorganic vapor phase epitaxy. The lattice constants have been carefully measured by X-ray double crystal diffraction. Mismatches between the substrates and epitaxial layers are observed in the direction corresponding to lattice contraction. The variation of fully-relaxed lattice constants calculated from symmetric (004) and asymmetric (115) diffraction shows that the contraction is related to both increasing inlet dopant flows and increasing growth temperatures. Secondary ion mass spectrometry is employed to analyze the elements in the epitaxial layers. The variations of Al, Ga, In and Zn components indicate that a decrease of In incorporation during the growth leads to the contracted lattice, although Zn atoms, which incorporate into the sites of In atoms during the doping, are smaller in covalent radius. The decrease is supposed to be caused by the competition between In and Zn atoms on the growth surface, which is well fit by the surface adsorption-trapping model. In addition, the suppression of Al and Ga incorporation by inlet dopant flows is observed. The possible cause might be the ethane generated by the pyrolysis of dopant source, which impedes the decomposition process of metalorganic sources of Al and Ga atoms. - Highlights: • AlGaInP layers are grown by metalorganic vapor phase epitaxy. • Zn induced lattice contraction in AlGaInP layers is observed. • Diethylzinc flow causes the contraction by impeding the incorporation of In. • The suppression of metalorganic decomposition by diethylzinc is noticed.

  12. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman, E-mail: rue2@psu.edu [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-07-25

    The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  13. Hafnium nitride buffer layers for growth of GaN on silicon

    Science.gov (United States)

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  14. Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures

    National Research Council Canada - National Science Library

    Chang, R

    1998-01-01

    ...) materials and insulating metal oxides. Improving the nature of such interfaces is a crucial barrier which must be surmounted before HTS materials can be successfully incorporated on a large scale into a myriad of advanced active...

  15. Precision bragg reflectors obtained by molecular beam epitaxy under in situ tunable dynamic reflectometry control

    Energy Technology Data Exchange (ETDEWEB)

    Bardinal, V.; Legros, R.; Fontaine, C.

    1995-12-31

    Highly accurate layer thickness are required for multilayers involved in photonic devices, such as Bragg reflectors. In this letter, we demonstrate that precise, real-time monitoring of molecular beam epitaxy growing layers can be achieved by near-normal incidence dynamic reflectometry with a tunable sapphire-titanium laser used as a source. The advantage of this new technique lies in the possibility of synchronizing the material changes and the reflectivity extrema by selecting adequate analysis wavelengths. This technique is shown to provide 885 nm GaAs-AlAs Bragg reflectors with a layer thickness accuracy in excess of 1%. (author). 17 refs.

  16. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.

    Science.gov (United States)

    Chou, Yi-Chia; Wu, Wen-Wei; Cheng, Shao-Liang; Yoo, Bong-Young; Myung, Nosang; Chen, Lih J; Tu, K N

    2008-08-01

    The formation of CoSi and CoSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron microscope. The CoSi2 has undergone an axial epitaxial growth in the Si nanowire and a stepwise growth mode was found. We observed that the stepwise growth occurs repeatedly in the form of an atomic step sweeping across the CoSi2/Si interface. It appears that the growth of a new step or a new silicide layer requires an independent event of nucleation. We are able to resolve the nucleation stage and the growth stage of each layer of the epitaxial growth in video images. In the nucleation stage, the incubation period is measured, which is much longer than the period needed to grow the layer across the silicide/Si interface. So the epitaxial growth consists of a repeating nucleation and a rapid stepwise growth across the epitaxial interface. This is a general behavior of epitaxial growth in nanowires. The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained. A discussion of the kinetics of supply limited and source-limited reaction in nanowire case by point contact reaction is given. The heterostructures are promising as high performance transistors based on intrinsic Si nanowires.

  17. Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Zimmerman, Jeramy D.; Lassiter, Brian E .; Xiao, Xin

    2017-12-19

    Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

  18. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Sharofidinov, Sh. Sh., E-mail: shukrillo71@mail.ru; Nikolaev, V. I.; Smirnov, A. N.; Chikiryaka, A. V.; Nikitina, I. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Odnoblyudov, M. A. [St. Petersburg State Polytechnic University (Russian Federation); Bugrov, V. E. [St. Petersburg National Research University of Information Technologies, Mechanics and Optics (Russian Federation); Romanov, A. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-04-15

    The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 μm and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.

  19. Electrophysical properties of silicon layers implanted with erbium and oxygen ions over a wide dose range and heat treated with different temperature regimes

    CERN Document Server

    Aleksandrov, O V; Sobolev, N A; Nikolaev, Y A

    2002-01-01

    The electrophysical properties of silicon implanted with erbium and oxygen ions over a wide dose range have been studied. The electron mobility dependence on the electrically active center concentration has been obtained in erbium-doped silicon with a concentration varied over 9 x 10 sup 1 sup 5 - 8 x 10 sup 1 sup 6 cm sup - sup 3 range. In the concentration profiles of electrically active centers n(x) and erbium atoms C(x), irregularities related to some peculiarities of the Er segregation during solid phase epitaxial recrystallization were found. They are regarded as peculiar to erbium ion implantation doses higher than the amorphization thresholds. A linear increase of a maximum concentration of electrically active centers and practically constant effective coefficient k of their activation have been observed at the erbium ion implantation doses higher than the amorphization threshold. An increase in the electrically active center concentration gains saturation and k drops at the erbium concentration highe...

  20. Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

    International Nuclear Information System (INIS)

    Huang Li; Xu Wen-Yan; Que Yan-De; Mao Jin-Hai; Meng Lei; Pan Li-Da; Li Geng; Wang Ye-Liang; Du Shi-Xuan; Gao Hong-Jun; Liu Yun-Qi

    2013-01-01

    Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. (topical review - low-dimensional nanostructures and devices)

  1. Magnetic property tuning of epitaxial spinel ferrite thin films by strain and composition modulation

    Science.gov (United States)

    Kang, Young-Min; Lee, Seung Han; Kim, Tae Cheol; Jeong, Jaeeun; Yang, Daejin; Han, Kyu-Sung; Kim, Dong Hun

    2017-10-01

    Epitaxial spinel ferrite CoFe2O4 and NiFe2O4 thin films and bilayers of NiFe2O4 and CoFe2O4 have been grown by pulsed laser deposition on (001)-oriented SrTiO3 and MgO substrates. Both the single layer thin films showed epitaxial growth on MgO substrates with out-of-plane magnetic easy axis, originating from the out-of-plane compressive strain and negative magnetostriction constant. However, films on SrTiO3 substrates exhibited a magnetic easy axis along the in-plane. Magnetic hysteresis loops showed intermediate shape between magnetically hard CoFe2O4 and magnetically soft NiFe2O4 without two-step switching. Interdiffusion between spinel phases was suppressed using a blocking layer of MgO.

  2. Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

    Science.gov (United States)

    Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

    2016-10-01

    Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

  3. The design, fabrication, and characterization of silicon-germanium optoelectronic devices grown by molecular beam epitaxy

    Science.gov (United States)

    Sustersic, Nathan Anthony

    In recent years, Ge and SiGe devices have been actively investigated for potential optoelectronic applications such as germanium solar cells for long wavelength absorption, quantum-dot intermediate band solar cells (IBSCs), quantum-dot infrared photodetectors (QDIPs) and germanium light-emitting diodes (LEDs). Current research into SiGe based optoelectronic devices is heavily based on nanostructures which employ quantum confinement and is at a stage where basic properties are being studied in order to optimize growth conditions necessary for incorporation into future devices. Ge and SiGe based devices are especially attractive due to ease of monolithic integration with current Si-based CMOS processing technology, longer carrier lifetime, and reduced phonon scattering. Defect formation and transformation was studied in SiGe layers grown on Si and Ge (100) substrates. The epitaxial layers were grown with molecular beam epitaxy (MBE) and characterized by X-ray measurements in order to study the accommodation of elastic strain energy in the layers. The accommodation of elastic strain energy specifies the amount of point defects created on the growth surface which may transform into extended crystalline defects in the volume of the layers. An understanding of crystalline defects in high lattice mismatched epitaxial structures is critical in order to optimize growth procedures so that epitaxial structures can be optimized for specific devices such as Ge based solar cells. Considering the optimization of epitaxial layers based on the structural transformation of point defects, Ge solar cells were fabricated and investigated using current-voltage measurements and quantum efficiency data. These Ge solar cells, optimized for long wavelength absorption, were fabricated to be employed in a bonded Ge/Si solar cell device. The doping of self-assembled Ge quantum dot structures grown on Si (100) was investigated using atomic force microscopy (AFM) and photoluminescence (PL

  4. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  5. Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

    OpenAIRE

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20??m, and exhibits moir? patterns with large periodicities, up to ~30?nm, indicating that the layers are highly strained. Topological defects in the moir? patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, hig...

  6. Materials fundamentals of molecular beam epitaxy

    CERN Document Server

    Tsao, Jeffrey Y

    1992-01-01

    The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest.

  7. Short-pulse chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Suian; Cui, Jie; Aoyagi, Yoshinobu (RIKEN, The Institute of Physical and Chemical Research, Saitama (Japan)); Tanaka, Akihiko (Bentec Co., Tokyo (Japan))

    1994-03-10

    Short-pulse chemical beam epitaxy has been proposed and studied. The short pulses with supersonic characteristics and a width of milliseconds were generated by high speed valves and the related pumping lines on a purpose-built CBE system. Using a time-of-fight technique, we verified the dependence of pulse properties on the source pressures and the valve on-time. The results indicate that modulation of molecular kinetic energy and accurate control of molecule supply were obtained. GaAs epitaxial growth with use of trimethylgallium pulses was carried out and investigated by means of RHEED (reflection high-energy electron diffraction) observation. It was demonstrated that the newly developed short-pulse chemical beam epitaxy has the advantage of high controllability

  8. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    Science.gov (United States)

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  9. Indirect Wafer Bonding and Epitaxial Transfer of GaSb-Based Materials

    Science.gov (United States)

    Grzesik, M.; Vangala, S. R.; Goodhue, W. D.

    2013-04-01

    Results from a study of indirect wafer bonding and epitaxial transfer of GaSb-based materials are presented. Benzocyclobutene (BCB) was used as a bonding agent to bond GaSb and epitaxial structures lattice matched to GaSb onto Si, GaAs, and sapphire carrier substrates. To better understand sources of stress during the bonding process, which can result in cracking and subsurface damage of the GaSb-based materials, BCB's hardness and reduced elastic modulus were measured at various stages during the curing process. Based on the results of curing experiments, a bonding and epitaxial transfer process for GaSb-based materials was then developed. Following bonding, using an experimentally determined low-stress cure cycle, GaSb substrates were removed from epitaxial layers of InAsSb using a combination of mechanical thinning and polishing followed by selective chemical etching using a hydrofluoric and chromic acid solution. Etch selectivity data are also presented where selectivity greater than 100:1 is achieved for GaSb:InAsSb.

  10. Group III-V Bismide Materials Grown by Liquid Phase Epitaxy

    Science.gov (United States)

    Dhar, Sunanda

    Bi containing III-V compound semiconductors have become important in the last few years for many potential device applications. Molecular beam epitaxy and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III-V-Bi series. Due to the restrictions of limited solubility of Bi in III-V solids, use of LPE has so far been limited to the growth of InSbBi and GaSbBi. We describe here details of the growth procedure and the characterization of these two ternaries by different groups with special emphasis on the structural, luminescence, and band gap reduction properties. Theoretical model based on diffusion of Bi across an LPE growth model is described with a view to optimize the growth parameters. Reference is also made to the melt growth of bulk crystals of these compounds and to the LPE growth of InPBi and InAsSbBi epitaxial layers.

  11. Urbach absorption edge in epitaxial erbium-doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Shmagin, V. B., E-mail: shm@ipmras.ru; Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F. [Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, GSP-105, Nizhniy Novgorod, Russia and Nizhniy Novgorod State University, 603950, 23 Gagarin ave., Nizhniy Novgorod (Russian Federation)

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  12. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy

    OpenAIRE

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    Abstract As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic?inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thic...

  13. Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

    Science.gov (United States)

    Yamashita, T.; Hayashi, S.; Naijo, T.; Momose, K.; Osawa, H.; Senzaki, J.; Kojima, K.; Kato, T.; Okumura, H.

    2018-05-01

    Double Shockley-type stacking faults (2SSFs) formed in 4H-SiC epitaxial films with a dopant concentration of 1.0 × 1016 cm-3 were characterized using grazing incident X-ray topography and high-resolution scanning transmission electron microscopy. The origins of 2SSFs were investigated, and it was found that 2SSFs in the epitaxial layer originated from narrow SFs with a double Shockley structure in the substrate. Partial dislocations formed between 4H-type and 2SSF were also characterized. The shapes of 2SSFs are related with Burgers vectors and core types of the two Shockley partial dislocations.

  14. UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devices

    Science.gov (United States)

    Yang, Qian-Qian; Yang, Dao-Bin; Zhao, Su-Ling; Huang, Yan; Xu, Zheng; Gong, Wei; Fan, Xing; Liu, Zhi-Fang; Huang, Qing-Yu; Xu, Xu-Rong

    2014-03-01

    The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed organic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained.

  15. Studies of free-to-bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor-phase epitaxy and molecular-beam epitaxy

    Science.gov (United States)

    Zemon, S.; Norris, P.; Koteles, E. S.; Lambert, G.

    1986-04-01

    Photoluminescence in an applied magnetic field is shown to be useful for the identification of trace acceptor impurities in GaAs. For an epitaxial layer grown by metalorganic vapor-phase epitaxy (MOVPE), a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. In material grown by molecular-beam epitaxy (MBE), the 1.47-eV transition was identified as a conduction-band-to-deep-acceptor process. Also identified was a shallow impurity, magnesium or beryllium, not detected in zero field. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed in both MOVPE and MBE material.

  16. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  17. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  18. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  19. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

    Science.gov (United States)

    Zhuang, Hao; Yang, Nianjun; Zhang, Lei; Fuchs, Regina; Jiang, Xin

    2015-05-27

    Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

  20. Liquid-phase epitaxy of InGaAsP solid solutions on profiled substrates of InP(100)

    International Nuclear Information System (INIS)

    Dvoryankin, V.F.; Kaevitser, L.R.; Komarov, A.A.; Telegin, A.A.; Khusid, L.B.; Chernushin, M.D.

    1990-01-01

    Peculiarities of selective growth of InGaAsP solid solutions under liquid-phase epitaxy in shallow grooves are considered. InGaAsP crystals grown in grooves oriented along crystallografic [110] and [011] directions are determined to trend to equilibrium form under two-phase epitaxy, while wedge-shaped form of In 0.77 Ga 0.23 As 0.53 P 0.45 and In 0.53 P o.45 and IN 0.59 Ga 0.41 As 0.83 P 0.12 epitaxial layers obtained in grooves is determined by their composition only and does not depend on groove configuration

  1. Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

    International Nuclear Information System (INIS)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

    2010-01-01

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  2. All epitaxial silicon diode heavy ion detector

    International Nuclear Information System (INIS)

    Gruhn, C.R.; Goldstone, P.D.; Jarmie, N.

    1976-01-01

    An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm 2 and has a total thickness of 50 μ. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed

  3. Molecular beam epitaxy for high Tc superconducting films

    International Nuclear Information System (INIS)

    Kothiyal, G.P.

    1992-01-01

    The discovery of high temperature superconductivity with T c above 30K in Ba doped La 2 CuO 4 by Bednorz and Muller generated considerable research interest world wide for developing new layered oxide superconductors. These layered copper oxides based superconductors have inherently short coherence lengths which make them very sensitive to interfacial degradation of the SNS and SIS junctions. Therefore, there is an intrinsic need for the growth of thin films with high degree of compositional homogeneity, crystalline orientation and perfection with sharp interfaces. The low growth temperatures, atomic layering capability that molecular beam epitaxy (MBE) has demonstrated for the growth of semiconductors suggest its potential use in the growth of high T c superconducting device structures fulfilling above requirements. The article focusses the attention on the special features of MBE and the difficulties in adopting conventional systems for the growth of high T c superconductors (HTSCs). The problems related to oxygenation required for achieving in situ superconductivity using MBE are discussed in brief. A review of the work pertaining to MBE growth of HTSCs including efforts made in author's laboratory is presented. (author). 47 refs., 6 figs

  4. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  5. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Soerensen, B. S.; Aagesen, M.; Soerensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygaard, J.

    2008-01-01

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10 5 ) of the on-off ratio caused by the surface inversion layer

  6. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  7. Defect formation and carrier doping in epitaxial films of the ''parent'' compound SrCuO2: Synthesis of two superconductors descendants

    International Nuclear Information System (INIS)

    Feenstra, R.; Norton, D.P.; Budai, J.D.; Jones, E.C.; Christen, D.K.; Kawai, T.

    1995-04-01

    The infinite layer or parent compounds ACuO 2 (A: Ca-Sr-Ba) constitute the simplest copper oxygen perovskites that contain the CuO 2 sheets essential for superconductivity. The stabilization of these basic ''building blocks'' as epitaxial films, therefore, provides alluring opportunities towards the search for new superconducting compounds and elucidation of the underlying mechanisms. In this work, general trends of the defect formation and carrier doping for epitaxial films of the intermediate endmember SrCuO 2 are reviewed. First results are presented from successful attempts to induce hole-doped superconductivity via the processing-controlled incorporation of charge reservoir layers

  8. The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

    CSIR Research Space (South Africa)

    Gouws, GJ

    1993-05-01

    Full Text Available The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due...

  9. Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells

    Science.gov (United States)

    Yoon, Woojun; Moore, James; Lochtefeld, Anthony; Kotulak, Nicole; Scheiman, David; Barnett, Allen; Jenkins, Phillip; Walters, Robert

    2017-08-01

    In this work, we demonstrated an enhanced surface passivation of epitaxially grown boron-doped Si emitters by replacing thermal SiO2 as a passivation layer employed in a 15.9% efficient 21-µm Si solar cell (88 cm2) on stainless steel with a remote-plasma atomic layer deposition (ALD) of an Al2O3 film. A thin Al2O3 film deposited by remote-plasma ALD was very effective at reducing the emitter saturation current density (J 0e) of epitaxial p+-emitter to 16.2 fA/cm2, compared to the J 0e of 184.9 fA/cm2 by thermal SiO2 films. This reduction in J 0e enables an increase in an implied open-circuit voltage (iV oc) from 630 to 688 mV. Quokka simulation shows that about a 1.1% absolute efficiency increase in the calculated baseline efficiency of a 15.1% of the ultrathin Si solar cell can be achievable by enhancing emitter surface passivation without changing the concentration in either the epi-emitter or epi-base. Finally, our results show that a high efficiency of 17.3% can be reached from the calculated baseline efficiency of 15.1% using the optimized conditions of an epitaxially grown emitter in combination with increasing the base doping concentration and improved base recombination lifetime.

  10. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumul......By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed...

  11. Symmetry Breaking in Few Layer Graphene Films

    Energy Technology Data Exchange (ETDEWEB)

    Bostwick, A.; Ohta, T.; McChesney, J.L.; Emtsev, K.; Seyller,Th.; Horn, K.; Rotenberg, E.

    2007-05-25

    Recently, it was demonstrated that the quasiparticledynamics, the layer-dependent charge and potential, and the c-axisscreening coefficient could be extracted from measurements of thespectral function of few layer graphene films grown epitaxially on SiCusing angle-resolved photoemission spectroscopy (ARPES). In this articlewe review these findings, and present detailed methodology for extractingsuch parameters from ARPES. We also present detailed arguments againstthe possibility of an energy gap at the Dirac crossing ED.

  12. The Interfacial Thermal Conductance of Epitaxial Metal-Semiconductor Interfaces

    Science.gov (United States)

    Ye, Ning

    -silicon), interfaces with varying levels of disorder (epitaxial and non-epitaxial). The ITC values of silicides-silicon interfaces observed in this study are higher than those of other metallic interfaces to Si found in literature. Most surprisingly, it is experimentally found that ITC values are independent of interfacial quality and substrate orientation. Computationally, it is found that the non-equilibrium atomistic Green's Function technique (NEGF), which is specically designed to simulate coherent elastic phonon transport across interfaces, significantly underpredicts ITC values for CoSi2-Si interfaces, suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. In contrast, the Diffuse Mismatch Model closely mimics the experimentally observed ITC values for CoSi 2-Si, NiSi-Si and TiSi2-Si interfaces, and only slightly overestimating the same for PtSi-Si interfaces. Furthermore, the results also show that ITC is independent of degenerate doping up to doping levels of ≈1 x 1019 cm-3, indicating there is no significant direct electronic transport or transport effects which depend on long-range metal-semiconductor band alignment. Then, I study the effect of phonon band structure on ITC through measurements of epitaxial NiAl1-xGax-GaAs interfaces for varying levels of alloy composition, which independently tunes the mass of the metal's heavy atom without much affect on the lattice structure or interatomic force constants. The ITC values are found to linearly increase with increasing Ga content, consistent with the disappearance of a phonon band gap in NiAl 1-xGax films with increasing Ga content, which enhances the phonon transmission coefficients due to a better density of states overlap between the two (NiAl1-xGax, GaAs) materials. Finally, I study a unique subset of epitaxial rocksalt interfaces between the Group IV metal nitrides (TiN, ZrN, and HfN) to MgO substrates as well as ScN layers. Prior to the currrent

  13. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  14. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

    International Nuclear Information System (INIS)

    Liu, Ziheng; Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A.

    2014-01-01

    In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells

  16. Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

    International Nuclear Information System (INIS)

    Uchino, T; Gili, E; Ashburn, P; Tan, L; Buiu, O; Hall, S

    2012-01-01

    A vertical MOSFET (VMOST) incorporating an epitaxial channel and a drain junction in a stacked silicon-insulator structure is presented. In this device structure, an oxide layer near the drain junction edge (referred to as a junction stop) acts as a dopant diffusion barrier and consequently a shallow drain junction is formed to suppress short channel effects. To investigate the scalability of this device, a simulation study in the sub-100 nm regime calibrated to measured results on the fabricated devices is carried out. The use of an epitaxial channel delivers 50% higher drive current due to the higher mobility of the retrograde channel and the junction stop structure delivers improvements of threshold voltage roll-off and drain-induced barrier lowering compared with a conventional VMOST. (fast track communication)

  17. Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

    International Nuclear Information System (INIS)

    Shayduk, Roman

    2010-01-01

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  18. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  19. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    International Nuclear Information System (INIS)

    Ferralis, Nicola; Carraro, Carlo

    2014-01-01

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

  20. The effect of silicon doping on the lattice parameter of gallium arsenide grown by liqiud-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques

    International Nuclear Information System (INIS)

    Fewster, P.F.; Willoughby, A.F.W.

    1980-01-01

    An extensive study of lattice parameters of silicon doped gallium arsenide grown by liqiud-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques has been undertaken. Lattice parameters were measured by the Bond techniques to a precision of 1 ppm, and the material studied was also characterised independently for carrier concentration, carrier mobility, and in some cases, for silicon site distribution by infra-red LVM measurements. It is concluded that the p-type LPE layers show a very large lattice contraction compared with undoped material, while VPE and gradient-freeze material have parameters much closer to the undoped value. The lattice contraction in Si-doped LPE layers is about 6 x 10 -4 A at hole concentration levels of 6 x 10 18 cm -3 , and the contraction is roughly proportional to the free-hole concentration from 1 to 6 x 10 18 cm -3 . It is concluded that the p-type Si-doped LPE layers studied contain a high concentration of a contracting defect associated with silicon whose concentration is related to the free-hole concentration. The most likely defect responsible is Sisub(G)sub(a), present in high concentrations as a compensating donor, although other defects cannot be ruled out. (orig.)

  1. Resistivity of epitaxial copper nanolines with trapezoidal cross-section

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Zonghuan; Frey, David M.; Merkh, Thomas; Lord, Robert; Washington, Morris A.; Lu, Toh-Ming

    2016-01-29

    The resistivity of epitaxial Cu nanolines with line width ranging from 20 to 180 nm and line height from 40 to 50 nm was measured using a four-point probe technique. The Cu nanolines were fabricated using ebeam lithography with a polymethyl methacrylate bilayer resist system for improved line edge smoothness. The cross-section profile of the lines was examined using the focused ion beam milling technique. The results indicate that the cross-section should be more accurately described as trapezoidal rather than as rectangular. Using the trapezoidal profile, the electrical resistivity was calculated from the measured resistance data. Modeling based on the Fuchs–Sondheimer (FS) theory using the trapezoidal profile was also carried out. The results were compared with the experimentally calculated resistivity data. For Cu lines with line width less than 30 nm, the measured resistivity was shown to be up to 20% higher than the value predicted by the FS theory. Further examination of Cu lines using atomic force microscopy and scanning electron microscopy was conducted to extract the surface roughness and line edge roughness information. Their contribution to the resistivity increase was estimated to be only up to 3% for the Cu nanolines fabricated, which did not significantly contribute to the overall resistivity for Cu lines with line width less than 30 nm. Other possible factors affecting the resistivity of the Cu nanolines were also discussed, including the oxide formation on the surface of the Cu lines. - Highlights: • Epitaxial copper nanolines were fabricated using ebeam lithography. • The effect of line cross-section profiles on electrical resistivity was studied. • Trapezoidal cross−section gives better resistivity estimation for lines down to 20 nm. • Impact of surface roughness and line edge roughness to resistivity is small. • Oxidization layer has an effect on the resistivity increase.

  2. Resistivity of epitaxial copper nanolines with trapezoidal cross-section

    International Nuclear Information System (INIS)

    Lu, Zonghuan; Frey, David M.; Merkh, Thomas; Lord, Robert; Washington, Morris A.; Lu, Toh-Ming

    2016-01-01

    The resistivity of epitaxial Cu nanolines with line width ranging from 20 to 180 nm and line height from 40 to 50 nm was measured using a four-point probe technique. The Cu nanolines were fabricated using ebeam lithography with a polymethyl methacrylate bilayer resist system for improved line edge smoothness. The cross-section profile of the lines was examined using the focused ion beam milling technique. The results indicate that the cross-section should be more accurately described as trapezoidal rather than as rectangular. Using the trapezoidal profile, the electrical resistivity was calculated from the measured resistance data. Modeling based on the Fuchs–Sondheimer (FS) theory using the trapezoidal profile was also carried out. The results were compared with the experimentally calculated resistivity data. For Cu lines with line width less than 30 nm, the measured resistivity was shown to be up to 20% higher than the value predicted by the FS theory. Further examination of Cu lines using atomic force microscopy and scanning electron microscopy was conducted to extract the surface roughness and line edge roughness information. Their contribution to the resistivity increase was estimated to be only up to 3% for the Cu nanolines fabricated, which did not significantly contribute to the overall resistivity for Cu lines with line width less than 30 nm. Other possible factors affecting the resistivity of the Cu nanolines were also discussed, including the oxide formation on the surface of the Cu lines. - Highlights: • Epitaxial copper nanolines were fabricated using ebeam lithography. • The effect of line cross-section profiles on electrical resistivity was studied. • Trapezoidal cross−section gives better resistivity estimation for lines down to 20 nm. • Impact of surface roughness and line edge roughness to resistivity is small. • Oxidization layer has an effect on the resistivity increase.

  3. The role of electron-electron repulsion in the problem of epitaxial graphene on a metal: Simple estimates

    Science.gov (United States)

    Davydov, S. Yu.

    2017-08-01

    For single-layer graphene placed on a metal substrate, the influence of intra- and interatomic Coulomb repulsion of electrons ( U and G, respectively) on its phase diagram is considered in the framework of an extended Hartree-Fock theory. The general solution of the problem is presented, on the basis of which special cases allowing for analytical consideration are analyzed: free and epitaxial graphene with and without regard for the energy of the electron transition between neighboring atoms of graphene. Three regions of the phase diagram are considered: spin and charge density waves (SDW and CDW, respectively) and the semimetal (SM) state uniform in the spin and charge. The main attention is paid to undoped graphene. It is shown that the allowance for the interaction with a metal substrate expands the SM existence domain. However, in all the considered cases, the boundary between the SDW and CDW states is described by the equation U = zG, where z = 3 is the number of nearest neighbors in graphene. The widening of the SM state region also results from the doping of graphene, and the effect is independent of the sign of free carriers introduced into epitaxial graphene by the substrate. According to estimates made, the only state possible in the buffer layer is the metal-type SM state, whereas, in epitaxial graphene, the CDW state is possible. The influence of temperature on the phase diagram of epitaxial graphene is discussed.

  4. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    Science.gov (United States)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  5. Epitaxy of II-VI compounds

    International Nuclear Information System (INIS)

    Gentile, A.L.

    1988-01-01

    A complete picture of the technology that includes selection, growth and preparation of substrate crystals, defect chemistry, techniques of epitaxial growth, and some of the methods available for characterization of the products is presented, as well as some of the fundamental problems involved in the growth and processing of a compound semiconductor composed of two elements with significant vapor pressures. 43 refs, 14 figs, 1 tab

  6. Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

    Science.gov (United States)

    Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

    2018-01-01

    Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

  7. Strain gradients in epitaxial ferroelectrics

    International Nuclear Information System (INIS)

    Catalan, G.; Noheda, B.; McAneney, J.; Sinnamon, L.J.; Gregg, J.M.

    2005-01-01

    X-ray analysis of ferroelectric thin layers of Ba 1/2 Sr 1/2 TiO 3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties

  8. Epitaxial nucleation and growth of molecular films

    Science.gov (United States)

    Hooks, Daniel Edwin

    2000-10-01

    The last decade has witnessed an increased emphasis on the design and use of molecular-based materials, commonly in thin film form, as components in electronic devices, sensors, displays, and logic elements. The growing interest in films based on molecular components, rather than their more traditional inorganic counterparts, stems largely from the premise that collective optical and electronic properties can be systematically manipulated through molecular design. Many of these properties depend strongly upon film structure and orientation with respect to the substrate upon which they are deposited. This relationship mandates careful attention to the interface between the primary molecular overlayer and the substrate. Further advances in molecular films and multilayer composites based on molecular films require improved understanding of the role of epitaxy in molecular organization as well as the nucleation events that precede film formation. Determination of critical nucleus dimensions and elucidation of the factors that govern critical size are particularly important for fabricating nanoscale molecular features and controlling domain defects in contiguous molecular films. This thesis describes an examination of the role of epitaxy in the growth of molecular films, including a hierarchical classification and grammar of molecular epitaxy, an atomic force microscopy (AFM) investigation of the intercalation of molecular components into multilayer organic-inorganic composites, and an AFM investigation of the nucleation of molecular films.

  9. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  10. Epitaxy of Polar Oxides and Semiconductors

    Science.gov (United States)

    Shelton, Christopher Tyrel

    Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some

  11. Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

    Science.gov (United States)

    Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

    2017-10-01

    Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

  12. Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick S; Xie, Yuantao; Heremans, Jean J

    2015-10-14

    The magnetotransport properties of epitaxial Ge/AlAs heterostructures with different growth conditions and substrate architectures have been studied under ±9 T magnetic field and at 390 mK temperature. Systematic mobility measurements of germanium (Ge) epilayers grown on GaAs substrates at growth temperatures from 350 to 450 °C allow us to extract a precise growth window for device-quality Ge, corroborated by structural and morphological properties. Our results on Si substrate using a composite metamorphic AlAs/GaAs buffer at 400 °C Ge growth temperature, show that the Ge/AlAs system can be tailored to have a single carrier transport while keeping the charge solely in the Ge layer. Single carrier transport confined to the Ge layer is demonstrated by the weak-localization quantum correction to the conductivity observed at low magnetic fields and 390 mK temperature. The weak localization effect points to a near-absence of spin-orbit interaction for carriers in the electronically active layer and is used here for the first time to pinpoint Ge as this active layer. Thus, the epitaxial Ge grown on Si using AlAs/GaAs buffer architecture is a promising candidate for next-generation energy-efficient fin field-effect transistor applications.

  13. Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V. [Taurida National V.I. Vernadsky University, Vernadsky Avenue, 4, 95007 Simferopol (Ukraine); Salyuk, O.Yu. [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine); Golub, V.O., E-mail: golub@imag.kiev.ua [Institute of Magnetism NASU and MESU, 36-B Vernadsky Blvd., 03142 Kiev (Ukraine)

    2015-11-15

    Magnetic properties of Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12} (84 nm) and Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12}/Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction.

  14. Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

    International Nuclear Information System (INIS)

    Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

    2015-01-01

    Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

  15. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  16. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  17. Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

    1987-09-01

    We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

  18. Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

    Science.gov (United States)

    Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

    2008-07-11

    Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

  19. Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gouder, S. [IM2NP Aix-Marseille Universités, UMR CNRS n°7334, Faculté des Sciences St-Jérôme - Case 142, 13397 Marseille Cedex 20 France (France); Electronics Department, University Hadj Lakhdar, Batna 05000 (Algeria); Mahamdi, R. [Electronics Department, University Hadj Lakhdar, Batna 05000 (Algeria); Aouassa, M.; Escoubas, S.; Favre, L.; Ronda, A.; Berbezier, I. [IM2NP Aix-Marseille Universités, UMR CNRS n°7334, Faculté des Sciences St-Jérôme - Case 142, 13397 Marseille Cedex 20 France (France)

    2014-01-01

    Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited by molecular beam epitaxy (MBE) on PS substrate. During deposition, the pore network of PS layers has been filled with Ge. We investigate the structure and morphology of PS as fabricated and after annealing at various temperatures. We show that the PS crystalline lattice is distorted and expanded in the direction perpendicular to the substrate plane due to the presence of chemisorbed –OH. An annealing at high temperature (> 500 °C), greatly changes the PS morphology and structure. This change is marked by an increase of the pore diameter while the lattice parameter becomes tensily strained in the plane (compressed in the direction perpendicular). The morphology and structure of Ge layers are investigated by transmission electron microscopy, high resolution X-ray diffraction and atomic force microscopy as a function of the deposition temperature and deposited thickness. The results show that the surface roughness, level of relaxation and Si-Ge intermixing (Ge content) depend on the growth temperature and deposited thickness. Two sub-layers are distinguished: the layer incorporated inside the PS pores (high level of intermixing) and the layer on top of the PS surface (low level of intermixing). When deposited at temperature > 500 °C, the Ge layers are fully relaxed with a top Si{sub 1−x}Ge{sub x} layer x = 0.74 and a very flat surface. Such layer can serve as fully relaxed ultra-thin SiGe pseudo-substrate with high Ge content. The epitaxy of Ge on sacrificial soft PS pseudo-substrate in the experimental conditions described here provides an easy way to fabricate fully relaxed SiGe pseudo-substrates. Moreover, Ge thin films epitaxially deposited by MBE on PS could be used as relaxed pseudo-substrate in conventional microelectronic technology. - Highlights: • We have developed a rapid

  20. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

    International Nuclear Information System (INIS)

    Riedl, C; Coletti, C; Starke, U

    2010-01-01

    Graphene, a monoatomic layer of graphite, hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This paper reviews the controlled growth of epitaxial graphene layers on SiC(0 0 0 1) and the manipulation of their electronic structure. We show that epitaxial graphene on SiC grows on top of a carbon interface layer that-although it has a graphite-like atomic structure-does not display the linear π-bands typical for graphene due to a strong covalent bonding to the substrate. Only the second carbon layer on top of this interface acts like monolayer graphene. With a further carbon layer, a graphene bilayer system develops. During the growth of epitaxial graphene on SiC(0 0 0 1) the number of graphene layers can be precisely controlled by monitoring the π-band structure. Experimental fingerprints for in situ growth control could be established. However, due to the influence of the interface layer, epitaxial graphene on SiC(0 0 0 1) is intrinsically n-doped and the layers have a long-range corrugation in their density of states. As a result, the Dirac point energy where the π-bands cross is shifted away from the Fermi energy, so that the ambipolar properties of graphene cannot be exploited. We demonstrate methods to compensate and eliminate this structural and electronic influence of the interface. We show that the band structure of epitaxial graphene on SiC(0 0 0 1) can be precisely tailored by functionalizing the graphene surface with tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) molecules. Charge neutrality can be achieved for mono- and bilayer graphene. On epitaxial bilayer graphene, where a band gap opens due to the asymmetric electric field across the layers imposed by the interface, the magnitude of this band gap

  1. Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

    KAUST Repository

    Lee, Da Hoon

    2017-08-05

    The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

  2. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  3. Electronic structure and band alignment at an epitaxial spinel/perovskite heterojunction.

    Science.gov (United States)

    Qiao, Liang; Li, Wei; Xiao, Haiyan; Meyer, Harry M; Liang, Xuelei; Nguyen, N V; Weber, William J; Biegalski, Michael D

    2014-08-27

    The electronic properties of solid-solid interfaces play critical roles in a variety of technological applications. Recent advances of film epitaxy and characterization techniques have demonstrated a wealth of exotic phenomena at interfaces of oxide materials, which are critically dependent on the alignment of their energy bands across the interface. Here we report a combined photoemission and electrical investigation of the electronic structures across a prototypical spinel/perovskite heterojunction. Energy-level band alignment at an epitaxial Co3O4/SrTiO3(001) heterointerface indicates a chemically abrupt, type I heterojunction without detectable band bending at both the film and substrate. The unexpected band alignment for this typical p-type semiconductor on SrTiO3 is attributed to its intrinsic d-d interband excitation, which significantly narrows the fundamental band gap between the top of the valence band and the bottom of the conduction band. The formation of the type I heterojunction with a flat-band state results in a simultaneous confinement of both electrons and holes inside the Co3O4 layer, thus rendering the epitaxial Co3O4/SrTiO3(001) heterostructure to be a very promising material for high-efficiency luminescence and optoelectronic device applications.

  4. Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

    Science.gov (United States)

    McKibbin, S R; Scappucci, G; Pok, W; Simmons, M Y

    2013-02-01

    Three-dimensional (3D) control of dopant profiles in silicon is a critical requirement for fabricating atomically precise transistors. We demonstrate conductance modulation through an atomic scale 3 nm wide δ-doped silicon-phosphorus wire using a vertically separated epitaxial doped Si:P top-gate. We show that intrinsic crystalline silicon grown at low temperatures (∼250 °C) serves as an effective gate dielectric permitting us to achieve large gate ranges (∼2.6 V) with leakage currents below 1 pA. Combining scanning tunneling lithography for precise lateral confinement, with monolayer doping and low temperature epitaxial overgrowth for precise vertical confinement, we can realize multiple layers of nano-patterned dopants in a single crystal material. These results demonstrate the viability of highly doped, vertically separated epitaxial gates in an all-crystalline architecture with long-term implications for monolithic 3D silicon circuits and for the realization of atomically precise donor architectures for quantum computing.

  5. Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

    Science.gov (United States)

    Kunc, J.; Rejhon, M.; Belas, E.; Dědič, V.; Moravec, P.; Franc, J.

    2017-10-01

    In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

  6. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele

    2015-02-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

  7. Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

  8. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  9. Consequences of Anode Interfacial Layer Deletion. HCl-Treated ITO in P3HT:PCBM-Based Bulk-Heterojunction Organic Photovoltaic Devices

    Science.gov (United States)

    2010-01-01

    an overall increase in light-to-power conversion efficiency (Eff) of 70% to 5.0% with an active layer composed of poly- (3-hexylthiophene) ( P3HT ) and...electrical homogenization. This suggests that an interface capable ofOhmic contact to the P3HT electron donor for loss-less charge collection might be...Device Fabrication. A clean, dry 10 mL Schlenk flask was charged with P3HT (20 mg), PCBM (20 mg), and a stir bar. The flask was cycled N2/vacuum

  10. New X-ray insight into oxygen intercalation in epitaxial graphene grown on 4H-SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Kowalski, G., E-mail: kowal@fuw.edu.pl; Tokarczyk, M. [Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland); Dąbrowski, P.; Ciepielewski, P.; Możdżonek, M.; Strupiński, W. [Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland)

    2015-03-14

    Efficient control of intercalation of epitaxial graphene by specific elements is a way to change properties of the graphene. Results of several experimental techniques, such as X-ray photoelectron spectroscopy, micro-Raman mapping, reflectivity, attenuated total reflection, X-ray diffraction, and X-ray reflectometry, gave a new insight into the intercalation of oxygen in the epitaxial graphene grown on 4H-SiC(0001). These results confirmed that oxygen intercalation decouples the graphene buffer layer from the 4H-SiC surface and converts it into the graphene layer. However, in contrast to the hydrogen intercalation, oxygen does not intercalate between carbon planes (in the case of few layer graphene) and the interlayer spacing stays constant at the level of 3.35–3.32 Å. Moreover, X-ray reflectometry showed the presence of an oxide layer having the thickness of about 0.8 Å underneath the graphene layers. Apart from the formation of the nonuniform thin oxide layer, generation of defects in graphene caused by oxygen was also evidenced. Last but not least, water islands underneath defected graphene regions in both intercalated and non-intercalated samples were most probably revealed. These water islands are formed in the case of all the samples stored under ambient laboratory conditions. Water islands can be removed from underneath the few layer graphene stacks by relevant thermal treatment or by UV illumination.

  11. Structure and Properties of Epitaxial Dielectrics on gallium nitride

    Science.gov (United States)

    Wheeler, Virginia Danielle

    GaN is recognized as a possible material for metal oxide semiconductor field effect transistors (MOSFETs) used in high temperature, high power and high speed electronic applications. However, high gate leakage and low device breakdown voltages limit their use in these applications. The use of high-kappa dielectrics, which have both a high permittivity (ε) and high band gap energy (Eg), can reduce the leakage current density that adversely affects MOS devices. La2O3 and Sc2O 3 are rare earth oxides with a large Eg (6.18 eV and 6.3 eV respectively) and a relatively high ε (27 and 14.1 respectively), which make them good candidates for enhancing MOSFET performance. Epitaxial growth of oxides is a possible approach to reducing leakage current and Fermi level pinning related to a high density of interface states for dielectrics on compound semiconductors. In this work, La2O3 and Sc2O 3 were characterized structurally and electronically as potential epitaxial gate dielectrics for use in GaN based MOSFETs. GaN surface treatments were examined as a means for additional interface passivation and influencing subsequent oxide formation. Potassium persulfate (K2(SO4)2) and potassium hydroxide (KOH) were explored as a way to achieve improved passivation and desired surface termination for GaN films deposited on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS) showed that KOH left a nitrogen-rich interface, while K2(SO 4)2 left a gallium-rich interface, which provides a way to control surface oxide formation. K2(SO4)2 exhibited a shift in the O1s peak indicating the formation of a gallium-rich GaOx at the surface with decreased carbon contaminants. GaO x acts as a passivating layer prior to dielectric deposition, which resulted in an order of magnitude reduction in leakage current, a reduced hysteresis window, and an overall improvement in device performance. Furthermore, K2(SO4)2 resulted in an additional 0.4 eV of

  12. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Kim Christine

    2011-01-01

    Full Text Available Abstract We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly.

  13. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    International Nuclear Information System (INIS)

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-01-01

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate

  14. Complex Magnetic Exchange Coupling between Co Nanostructures and Ni(111) across Epitaxial Graphene.

    Science.gov (United States)

    Barla, Alessandro; Bellini, Valerio; Rusponi, Stefano; Ferriani, Paolo; Pivetta, Marina; Donati, Fabio; Patthey, François; Persichetti, Luca; Mahatha, Sanjoy K; Papagno, Marco; Piamonteze, Cinthia; Fichtner, Simon; Heinze, Stefan; Gambardella, Pietro; Brune, Harald; Carbone, Carlo

    2016-01-26

    We report on the magnetic coupling between isolated Co atoms as well as small Co islands and Ni(111) mediated by an epitaxial graphene layer. X-ray magnetic circular dichroism and scanning tunneling microscopy combined with density functional theory calculations reveal that Co atoms occupy two distinct adsorption sites, with different magnetic coupling to the underlying Ni(111) surface. We further report a transition from an antiferromagnetic to a ferromagnetic coupling with increasing Co cluster size. Our results highlight the extreme sensitivity of the exchange interaction mediated by graphene to the adsorption site and to the in-plane coordination of the magnetic atoms.

  15. Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

    Energy Technology Data Exchange (ETDEWEB)

    Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-10-13

    We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

  16. Growth of GaN on Ge(111) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R. R.; Degroote, S.; Cheng, K.; Leys, M.; Kuijk, M.; Borghs, G.

    2006-01-01

    The epitaxial growth of GaN on Ge is reported. The authors found that direct growth of GaN performs exceptionally well on Ge(111) with plasma assisted molecular beam epitaxy. A streaky reflection high energy electron diffraction pattern is observed during growth. X-ray diffraction showed a rocking curve full width at half maximum of only 371 arc sec for a 38 nm GaN layer and indicates an abrupt interface between the GaN and Ge. Secondary ion mass spectrometry shows limited diffusion of Ga atoms into the Ge substrate and Ge atoms into the GaN layers. Current-voltage measurements show rectifying behavior for n-GaN on p-Ge. Their results indicate that GaN growth on Ge does not require intermediate layers, allowing the Ge substrate to be used as back contact in vertical devices. A p-n junction formed between GaN and Ge can be used in heterojunction devices

  17. Epitaxial growth of BaTiO3 thin films by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Chern, C. S.; Zhao, J.; Luo, L.; Lu, P.; Li, Y. Q.; Norris, P.; Kear, B.; Cosandey, F.; Maggiore, C. J.; Gallois, B.; Wilkens, B. J.

    1992-03-01

    High-quality BaTiO3 thin films have been epitaxially grown on (001) LaAlO3 and (001) NdGaO3 substrates by plasma-enhanced metalorganic chemical vapor deposition at a substrate temperature of 680 °C. X-ray diffraction θ-2θ, ω, and φ scan results all indicate that single-crystalline BaTiO3 thin films were epitaxially grown on the substrates with orientation perpendicular to the substrates. The high degree of epitaxial crystallinity is further confirmed by Rutherford backscattering spectrometry which gives a minimum yield of 7.5% and 11% for films deposited on LaAlO3 and NdGaO3, respectively. Cross-section high-resolution electron microscopy images also showed that the layer epitaxy of BaTiO3 was characterized by an atomically abrupt film/substrate interface. Scanning electron micrographs showed that these films had very smooth surface morphologies.

  18. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  19. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Radaelli, G., E-mail: greta.radaelli@gmail.com; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R. [LNESS Center - Dipartimento di Fisica del Politecnico di Milano, Como 22100 (Italy)

    2014-05-07

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

  20. Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)

    International Nuclear Information System (INIS)

    Radaelli, G.; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

    2014-01-01

    Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures

  1. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Drago, M.; Werner, C.; Pristovsek, M.; Pohl, U.W. [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstrasse 36, 10623 Berlin (Germany); Richter, W. [Universita di Roma ' ' Torvergata' ' , Dipartimento di Fisica, Via della ricerca scientifica 1, I-00133 Roma (Italy)

    2005-11-01

    Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in-situ by spectroscopic ellipsometry (SE), ex-situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire nitridation. Using the sensitivity of in-situ SE with respect to roughness we established a new growth procedure with low V/III ratio (10{sup 4}) at high temperature (580 C) and growth rates as high as 350 nm/h, leading to improved electronic layer properties and allowing for growth of comparably thick layers. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  3. Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air

    Science.gov (United States)

    Grigoryev, D. V.; Voitsekhovskii, A. V.; Lozovoy, K. A.; Tarasenko, V. F.; Shulepov, M. A.

    2015-11-01

    In this paper the influence of the plasma volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) films are discussed. The experimental data show that the action of pulses of nanosecond volume discharge in air at atmospheric pressure leads to changes in the electrophysical properties of MCT epitaxial films due to formation of a near-surface high- conductivity layer of the n-type conduction. The preliminary results show that it is possible to use such actions in the development of technologies for the controlled change of the properties of MCT.

  4. Influence of Alveolar Bone Loss and Cement Layer Thickness on the Biomechanical Behavior of Endodontically Treated Maxillary Incisors: A 3-dimensional Finite Element Analysis.

    Science.gov (United States)

    Dal Piva, Amanda Maria de Oliveira; Tribst, João Paulo Mendes; Souza, Rodrigo Othávio de Assunção E; Borges, Alexandre Luiz Souto

    2017-05-01

    In order to understand the mechanical behavior of a weakened incisor, this study aimed to evaluate the stress distribution caused by different alveolar bone heights and cement layer thickness. A finite element analysis was conducted for this investigation. An intact maxillary central incisor was initially modeled, and the bone of the models was modified in order to simulate 4 levels of bone height: BL0 (no bone loss), BL1 (1/3 bone loss), BL2 (1/2 bone loss), and BL3 (2/3 bone loss). These teeth models were remodeled with a fiber post at 2 different cement thicknesses and restored with a ceramic crown; "A" refers to the well-adapted fiber post (0.3 mm) and "B" to the nonadapted fiber post (1 mm), resulting in 12 models. RelyX ARC (3M ESPE, St Paul, MN) cement was simulated for the cementation of the crowns and fiber posts for all groups. Numeric models received a load of 100 N on the lingual surface. All materials and structures were considered linear elastic, homogeneous, and isotropic. Numeric models were plotted and meshed with isoparametric elements, and results were expressed in maximum principal stress. For fiberglass posts, cement, and dentin, the highest stress concentration occurred in the groups with increased bone loss. For cortical bone, the highest values were for the groups with 1/3 bone loss. A greater thickness of cement layer concentrates more stress. More bone loss and greater CLT were the influential factors in concentrating the stress. Copyright © 2017 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  5. Acoustoelectric transport at gigahertz frequencies in coated epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Mínguez, A., E-mail: alberto.h.minguez@pdi-berlin.de; Tahraoui, A.; Lopes, J. M. J.; Santos, P. V. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2016-05-09

    Epitaxial graphene (EG) produced from SiC surfaces by silicon sublimation is emerging as a material for electronic applications due to its good electronic properties and availability over large areas on a semiconducting substrate. In this contribution, we report on the transport of charge carriers in EG on SiC using high-frequency (>1 GHz) surface acoustic waves (SAWs). In our devices, the EG is coated with hydrogen-silsesquioxane, SiO{sub 2}, and a ZnO layer. This allows the efficient generation of SAWs and is compatible with the deposition of a metal top gate. Measurements of frequency- and time-resolved power scattering parameters confirm the generation and propagation of SAWs with frequencies of up to more than 7 GHz. Furthermore, the ZnO coating enhances the acoustoelectric currents by two orders of magnitude as compared to our previous uncoated samples. These results are an important step towards the dynamic acoustic control of charge carriers in graphene at gigahertz frequencies.

  6. Selenidation of epitaxial silicene on ZrB2

    Science.gov (United States)

    Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

    2018-01-01

    The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.

  7. Epitaxy-stabilized n-type superconducting cuprates

    CERN Document Server

    Naito, M; Tsukada, A

    2002-01-01

    We report the growth of n-type superconducting T'-(La,Ce) sub 2 CuO sub 4 and infinite-layer (IL) (Sr,La)CuO sub 2 thin films by means of molecular beam epitaxy (MBE). The bulk synthesis of T'-(La,Ce) sub 2 CuO sub 4 and IL-(Sr,La)CuO sub 2 requires complicated techniques: synthesis at low temperatures below 600 deg C for the former and at high pressures above 3 GPa for the latter. This makes it difficult to grow bulk single crystals. We have found, however, that high-quality single-crystalline films of both compounds can be rather easily prepared by thin-film processes. Single-phase T'-(La,Ce) sub 2 CuO sub 4 films can be obtained for a wide range of x (0.0 <= x <= approx 0.4). The best T sub c sup e sup n sup d is over 30 K, which is the highest in the T' family. For IL-(Sr,La)CuO sub 2 , by using KTaO sub 3 substrates, high T sub c sup e sup n sup d over 39 K and also metallic resistivity were achieved for the first time to our knowledge. We describe the key parameters in the growth and the propertie...

  8. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  9. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  10. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  11. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

    Science.gov (United States)

    Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

    2017-09-01

    Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

  12. Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

    Science.gov (United States)

    Sato, Hironobu; Kasahara, Yusuke; Kihara, Naoko; Seino, Yuriko; Miyagi, Ken; Minegishi, Shinya; Kubota, Hitoshi; Kobayashi, Katsutoshi; Kanai, Hideki; Kodera, Katsuyoshi; Kawamonzen, Yoshiaki; Shiraishi, Masayuki; Yamano, Hitoshi; Nomura, Satoshi; Azuma, Tsukasa; Hayakawa, Teruaki

    2016-04-01

    Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3-7 periods of the lamella spacing of the block copolymer, Lo. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 Lo and 4 Lo in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.

  13. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao

    2017-05-18

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  14. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  15. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  16. Treating Infertility

    Science.gov (United States)

    ... Patients Search FAQs Treating Infertility Page Navigation ▼ ACOG Pregnancy Book Treating Infertility Patient Education FAQs Treating Infertility Patient Education Pamphlets - Spanish Treating ...

  17. Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

    2016-12-01

    For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

  18. Electronic structure of epitaxial chalcopyrite surfaces and interfaces for photovoltaics

    International Nuclear Information System (INIS)

    Hofmann, Andreas

    2012-01-01

    electron states was observed, which can be understood as a higher localization of electronic states and lower crystal quality. In addition, a strong rearrangement of the copper partial density of states was shown. The intimate knowledge of the electric structure was then exploited to demonstrate the valence band discontinuity between CuInSe 2 and CuIn 3 Se 5 . The analysis by photoemission yielded a valence band offset of 0.28 eV, again in reasonable agreement with theoretical results. The p-n-junction in chalcopyrite solar cells is situated near the absorber-buffer interface, which is therefore crucial for the device performance. In this thesis, ZnO deposited from metal-organic precursors on epitaxial CuInSe 2 was investigated as cadmium-free buffer material. In the course of contact formation, the interfacial region of the absorber becomes depleted of copper. Additionally, a thin intrinsic ZnSe layer is formed, prior to the growth of ZnO. The derived band alignments show no dependence on the surface orientation of the chalcopyrite substrate and are consistent with theoretical results. The conduction band lineup is favorable for the application in solar cells.

  19. Pillar shape modulation in epitaxial BiFeO3–CoFe2O4 vertical nanocomposite films

    OpenAIRE

    Dong Hun Kim; Nicolas M. Aimon; C. A. Ross

    2014-01-01

    Self-assembled epitaxial CoFe2O4-BiFeO3 nanocomposite films, in which pillars of CoFe2O4 grow within a single crystal BiFeO3 matrix, show both ferrimagnetism and ferroelectricity. The pillars typically have a uniform cross-section, but here two methods are demonstrated to produce a width modulation during growth by pulsed laser deposition. This was achieved by growing a blocking layer of BiFeO3 to produce layers of separated pillars or pillars with constrictions, or by changing the temperatur...

  20. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  1. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  2. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  3. Substrate heater for the growth of epitaxial silicon films

    Science.gov (United States)

    Deming, Matthew; Varhue, Walter; Adams, Edward; Lavoie, Mark

    1999-03-01

    The single wafer processing of epitaxial Si films requires that special attention be paid to the design of the substrate heater assembly. This document describes the evolution and testing of an in situ heater used to deposit epitaxial Si films at temperatures as high as 700 °C. One problem encountered was the production of excessive levels of ultraviolet radiation which contributed to the desorption of water vapor from the vacuum chamber walls during the in situ cleaning process. A second problem involved the formation of a molybdenum containing film that poisoned epitaxial growth. A final proven in situ heater design is presented which avoids these problems.

  4. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  5. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  6. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  7. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  8. Monolithic Mid-Infrared Integrated Photonics Using Silicon-on-Epitaxial Barium Titanate Thin Films.

    Science.gov (United States)

    Jin, Tiening; Li, Leigang; Zhang, Bruce; Lin, Hao-Yu Greg; Wang, Haiyan; Lin, Pao Tai

    2017-07-05

    Broadband mid-infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal-oxide-semiconductor process. The epitaxial BTO thin films are grown on lanthanum aluminate (LAO) substrates by the pulsed laser deposition technique, wherein a broad infrared transmittance between λ = 2.5 and 7 μm is observed. The optical waveguiding direction is defined by the high-refractive-index amorphous Si (a-Si) ridge structure developed on the BTO layer. Our waveguides show a sharp fundamental mode over the broad mid-IR spectrum, whereas its optical field distribution between the a-Si and BTO layers can be modified by varying the height of the a-Si ridge. With the advantages of broad mid-IR transparency and the intrinsic electro-optic properties, our monolithic Si on a ferroelectric BTO platform will enable tunable mid-IR microphotonics that are desired for high-speed optical logic gates and chip-scale biochemical sensors.

  9. Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Aheli Ghosh

    2017-09-01

    Full Text Available The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ∼0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90  ° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitance- and conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit and their energy distribution. Finally, extracted Dit values were benchmarked against published Dit data for Ge MOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with Ge MOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.

  10. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  11. Observation of longitudinal spin-Seebeck effect in cobalt-ferrite epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Tomohiko Niizeki

    2015-05-01

    Full Text Available The longitudinal spin-Seebeck effect (LSSE has been investigated in cobalt ferrite (CFO, an exceptionally hard magnetic spinel ferrite. A bilayer of a polycrystalline Pt and an epitaxially-strained CFO(110 exhibiting an in-plane uniaxial anisotropy was prepared by reactive rf sputtering technique. Thermally generated spin voltage in the CFO layer was measured via the inverse spin-Hall effect in the Pt layer. External-magnetic-field (H dependence of the LSSE voltage (VLSSE in the Pt/CFO(110 sample with H ∥ [001] was found to exhibit a hysteresis loop with a high squareness ratio and high coercivity, while that with H ∥ [ 1 1 ̄ 0 ] shows a nearly closed loop, reflecting the different anisotropies induced by the epitaxial strain. The magnitude of VLSSE has a linear relationship with the temperature difference (ΔT, giving the relatively large VLSSE /ΔT of about 3 μV/K for CFO(110 which was kept even at zero external field.

  12. Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

    Science.gov (United States)

    Grigoryev, Denis V.; Voitsekhovskii, Alexandr V.; Lozovoy, Kirill A.; Nesmelov, Sergey N.; Dzyadukh, Stanislav M.; Tarasenko, Viktor F.; Shulepov, Michail A.; Dvoretskii, Sergei A.

    2015-12-01

    The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by molecular beam epitaxy. Hall measurements of electro-physical parameters of MCT samples after irradiation have shown that there is a layer of epitaxial films exhibiting n-type conductivity that is formed in the near-surface area. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. Also it is shown that the impact of the discharge leads to significant changes in electro-physical characteristics of MIS structures. This fact is demonstrated by increase in density of positive fixed charge, change in the hysteresis type of the capacitance-voltage characteristic, an increase in density of surface states. The preliminary results show that it is possible to use such actions in the development of technologies of the controlled change in the properties of MCT.

  13. Characterization using ion beam analysis of In(Ga)As quantum dots grown by epitaxy on silicon

    International Nuclear Information System (INIS)

    Pelloux-Gervais, D.

    2012-01-01

    The integration on silicon of direct band gap materials such as some semiconductors from the III-V group is of a rising interest for tomorrow's optoelectronic devices. Although silicon is the raw material for many microelectronic devices, it has a poor light emitting efficiency due to his indirect band gap. Among the III-V family, the In(Ga)As compounds present the advantage of a smaller band gap than silicon, which encourage the confinement of electron-hole pairs. However, the large lattice mismatch between silicon and In(Ga)As is a serious limitation for the epitaxial integration. This PhD work has been focused on the ion beam study of In(Ga)As quantum dots (QDs) grown by epitaxy on silicon and of the QD capping by silicon. Rutherford Backscattering Spectrometry (RBS) has been used to quantify composition of both QDs and cap layer. Exo-diffusion and excess issues of some elements have been pointed out. The epitaxial relation between QDs and substrate have been investigated by ion channelling (RBS-C). Medium Energy Ion Scattering (MEIS) has also been used to obtain high resolution profiles of composition, defects and strain for both the QD plane and the capping layer. Direct space mapping of both crystals has also been achieved by MEIS thanks to the blocking effect. (author)

  14. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  15. Shaping metal nanocrystals through epitaxial seeded growth

    Energy Technology Data Exchange (ETDEWEB)

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  16. Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

    Science.gov (United States)

    Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

    Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

  17. Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

    Science.gov (United States)

    Molaei, Roya

    The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. Ni

  18. Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination.

    Science.gov (United States)

    Narchi, Paul; Alvarez, Jose; Chrétien, Pascal; Picardi, Gennaro; Cariou, Romain; Foldyna, Martin; Prod'homme, Patricia; Kleider, Jean-Paul; I Cabarrocas, Pere Roca

    2016-12-01

    Both surface photovoltage and photocurrent enable to assess the effect of visible light illumination on the electrical behavior of a solar cell. We report on photovoltage and photocurrent measurements with nanometer scale resolution performed on the cross section of an epitaxial crystalline silicon solar cell, using respectively Kelvin probe force microscopy and conducting probe atomic force microscopy. Even though two different setups are used, the scans were performed on locations within 100-μm distance in order to compare data from the same area and provide a consistent interpretation. In both measurements, modifications under illumination are observed in accordance with the theory of PIN junctions. Moreover, an unintentional doping during the deposition of the epitaxial silicon intrinsic layer in the solar cell is suggested from the comparison between photovoltage and photocurrent measurements.

  19. Investigating the influence of epitaxial modulation on the evolution of superhardness of the VN/TiB{sub 2} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Yupeng [Energy and Materials Engineering Centre, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, Tianjin 300387 (China); Dong, Lei, E-mail: dlei0008@126.com [Energy and Materials Engineering Centre, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, Tianjin 300387 (China); Liu, Na; Yu, Jiangang; Li, Chun [Energy and Materials Engineering Centre, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, Tianjin 300387 (China); Li, Dejun, E-mail: dejunli@mail.tjnu.edu.cn [Energy and Materials Engineering Centre, College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Tianjin International Joint Research Centre of Surface Technology for Energy Storage Materials, Tianjin 300387 (China)

    2016-12-30

    Graphical abstract: The novel VN/TiB{sub 2} multilayers were produced by a magnetron sputtering system. Reasonable modulation structure affected properties of the multilayers. The double epitaxial growth as shown in HRTEM images was newly found to be a main reason for coherent growth of the VN/TiB{sub 2} multilayers within a certain thickness. The coherent growth model of the multilayer was also used to explain the growth mechanism of the VN/TiB{sub 2} multilayers in this work, which provided a useful inspiration to understand the strategies to enhance the multilayers’ engineering applications. - Highlights: • The VN/TiB{sub 2} multilayers are produced by magnetron sputtering. • A kind of second epitaxial growth is found in multilayer. • The coherent growth model is designed to explain the growth mechanism. • Second epitaxial growth promotes to form superhardness. • Coherent growth appears twice with modulation ratios decreasing. - Abstract: A series of the VN/TiB{sub 2} nanomultilayers with different modulation ratios (t{sub VN}:t{sub TiB2}) and different modulation periods were synthesized via a magnetron sputtering system. The cross-sectional transmission electron microscopy (TEM) and x-ray diffraction (XRD) examinations indicated that in the alternately deposited monolayers of the VN and TiB{sub 2}, due to the influence of the crystal (111){sub VN} texture, TiB{sub 2} layer presented epitaxial growth on the surface of the VN layer when its t{sub VN}:t{sub TiB2} was 5:1. Moreover, the formation of the TiB{sub 2} crystal promoted the growth of (200){sub VN} and significantly improved the preferential growth of nanomultilayers. With decreasing t{sub VN}:t{sub TiB2} to 1:7, the thin VN layer was crystallized under the introduction of crystalline TiB{sub 2} layers. A type of double epitaxial growth was observed to be a main reason for the coherent growth of the VN/TiB{sub 2} nanomultilayers within a certain thickness. Consequently, the multilayers

  20. Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

    DEFF Research Database (Denmark)

    Lin, Li; Jensen, Flemming; Herstrøm, Berit

    Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact....

  1. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Miller, R. I.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Yu, K. M.; Liu, X.; Furdyna, J. K.; MacFarlane, W. A.

    2009-04-01

    A low energy beam of spin polarized 8Li + has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  2. Spin lattice relaxation of 8Li in a ferromagnetic EuO epitaxial thin film

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Egilmez, M.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; Morris, G. D.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Ingle, N. J. C.; MacFarlane, W. A.

    2009-04-01

    We inject a low energy spin polarized Li+8 beam into an epitaxially grown multilayer film consisting of Au(20 nm)/EuO(100 nm)/ LaAlO3, and investigate the nuclear spin relaxation at 3.33 T. The relaxation varies with implantation energy below 28 keV as the fraction of the probe Li8 stopping in each layer changes. We attribute the fast relaxating component to the EuO, while the much slower relaxation has contributions from both the Au and the substrate. However, fast relaxation is still observed at the lowest implantation energy where all the Li8 stops in the Au capping layer. This may be due to a proximity effect from the EuO.

  3. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  4. Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

    Energy Technology Data Exchange (ETDEWEB)

    Song, Q., E-mail: susan@phas.ubc.c [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Chow, K.H. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Miller, R.I. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Fan, I. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Hossain, M.D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Canadian Institute of Advanced Research (Canada); Kreitzman, S.R.; Levy, C.D.P. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Parolin, T.J. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Pearson, M.R.; Salman, Z. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Saadaoui, H.; Smadella, M.; Wang, D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Yu, K.M. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); MacFarlane, W.A. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

    2009-04-15

    A low energy beam of spin polarized {sup 8}Li{sup +} has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

  5. Spin lattice relaxation of {sup 8}Li in a ferromagnetic EuO epitaxial thin film

    Energy Technology Data Exchange (ETDEWEB)

    Song, Q., E-mail: susan@phas.ubc.c [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Chow, K.H.; Egilmez, M.; Fan, I. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Hossain, M.D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Canadian Institute of Advanced Research (Canada); Kreitzman, S.R.; Levy, C.D.P.; Morris, G.D. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Parolin, T.J. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Pearson, M.R. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Salman, Z. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Physics Department, Oxford University, Parks Road, Oxford, OX1 3PU (United Kingdom); Saadaoui, H.; Smadella, M.; Wang, D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Ingle, N.J.C. [AMPEL, University of British Columbia, Vancouver (Canada); MacFarlane, W.A. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

    2009-04-15

    We inject a low energy spin polarized {sup 8}Li{sup +} beam into an epitaxially grown multilayer film consisting of Au(20 nm)/EuO(100 nm)/LaAlO{sub 3}, and investigate the nuclear spin relaxation at 3.33 T. The relaxation varies with implantation energy below 28 keV as the fraction of the probe {sup 8}Li stopping in each layer changes. We attribute the fast relaxating component to the EuO, while the much slower relaxation has contributions from both the Au and the substrate. However, fast relaxation is still observed at the lowest implantation energy where all the {sup 8}Li stops in the Au capping layer. This may be due to a proximity effect from the EuO.

  6. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  7. Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Emery, Jonathan D., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu; Johns, James E.; McBriarty, Martin E.; Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Wheeler, Virginia H.; Kurt Gaskill, D. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Detlefs, Blanka [ESRF—The European Synchrotron, CS 40220, 71, Avenue des Martyrs, 38043 Grenoble (France); Bedzyk, Michael J., E-mail: jdemery@anl.gov, E-mail: bedzyk@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-10-20

    The intercalation of various atomic species, such as hydrogen, to the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene overlayers. Here, we use high-resolution X-ray reflectivity to investigate the structural consequences of the hydrogen intercalation process used in the formation of quasi-free-standing (QFS) EG/SiC(0001). We confirm that the interfacial layer is converted to a layer structurally indistinguishable from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene layers within the film, is vertically displaced by ∼2.1 Å. The number of total carbon layers is conserved during the process, and we observe no other structural changes such as interlayer intercalation or expansion of the graphene d-spacing. These results clarify the under-determined structure of hydrogen intercalated QFS-EG/SiC(0001) and provide a precise model to inform further fundamental and practical understanding of the system.

  8. Microwave dynamics of YBCO bi-epitaxial Josephson structures

    DEFF Research Database (Denmark)

    Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

    1996-01-01

    The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

  9. Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Shayduk, Roman

    2010-05-20

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  10. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  11. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

    Science.gov (United States)

    Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

    2016-05-04

    Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

  12. Atomic layer deposition of nanostructured materials

    CERN Document Server

    Pinna, Nicola

    2012-01-01

    Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (du

  13. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    Science.gov (United States)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (0001) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  14. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    Science.gov (United States)

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.

  15. Hybrid liquid phase epitaxy processes for YBa{sub 2}Cu{sub 3}O{sub 7} film growth

    Energy Technology Data Exchange (ETDEWEB)

    Kursumovic, A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Tomov, R I [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Huehne, R [Institut fuer Festkoerper-und Werkstoffforschung, Helmholtzstrasse 20, 01069 Dresden (Germany); MacManus-Driscoll, J L [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Glowacki, B A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2004-10-01

    A number of liquid phase epitaxy (LPE) related growth methods have been investigated. These hybrid-LPE processes enable high rate 'liquid assisted' growth of epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films without the many disadvantages of classical LPE. Growth occurs by diffusive transport of Y through a thin liquid flux layer. This layer may be pre-deposited onto the substrate by various means including vacuum and non-vacuum techniques, or deposited at the growth temperature. The composition of the liquid layer is maintained during film growth by feeding YBa{sub 2}Cu{sub 3}O{sub 7}, or the separate components, either from the vapour or by a powder route. Growth rates up to 10 nm s{sup -1} have been demonstrated. Deposition of c-axis oriented epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} is reported on both seeded and non-seeded substrates; the process is tolerant of a high substrate mismatch. Films 1-2 {mu}m thick with T{sub c} {approx} 90K and a critical current density J{sub c}> 2 MA cm{sup -2} have been grown on a range of single crystal substrates as well as on buffered textured metallic tapes. The mechanism of nucleation and growth from a thin liquid layer is described within the general theoretical framework of crystal growth. Particular features of the growth are the short time constant for equilibration of transients in the deposition conditions, the wide range of relative supersaturation spanned by the process, and dominance of interface kinetic effects compared to volume diffusion in the liquid flux.

  16. Plasticity and microstructure of epitaxial Ag/Ni multilayers; Mechanische Eigenschaften und Mikrostruktur epitaktischer Ag/Ni-Multilagenschichten

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Tobias K.

    2007-10-15

    To meet the still increasing technical demands of new materials, it is required to improve basic knowledge of thin films and multilayers. This thesis describes the microstructure and mechanical behaviour of thin epitaxial Ag/Ni-multilayers. Former investigations were only done on polycrystalline multilayers or epitaxial single layers. The manufacture of epitaxial Ag/Ni-multilayers on (111) orientated Si-substrates was performed by a magnetron sputtering technique under ultra high vacuum (UHV). The thickness of the alternating Ag- and Ni-layers varies between 100 and 400 nm, the thickness of the whole film varies between 200 and 800 nm. Hardness and flow stress of Ag/Ni-multilayers were measured with a nanoindentation technique, a substrate curvature method and by X-ray diffraction. The hardness of these multilayers varies between 1.5 and 2.0 GPa. The Ag single film hardness is 0.5 GPa and Ni film 1.8 GPa. The flow stress of the Ag/Ni-multilayers varies between 350 and 800 MPa. The Ag single layer shows a flow stress of 100 MPa and Ni of 450 MPa. Both hardness and flow stress increase with decreasing layer thickness. In situ TEM and HRTEM experiments showed a semicoherent Ag/Ni-interface. It was observed that these interfaces act as sources and sinks. Dislocation loops formed at the interface expand and shrink according to the stress state. They combine with loops from the opposite interface or with the interface itself and form threading dislocations. Dislocation loops penetrating an interface were not observed. Results were compared with various models which simulate flow stress in thin films and multilayers. The most important models are calculated by Nix-Freund, the Source-model after von Blanckenhagen and the Hall-Petch-model. (orig.)

  17. Calculation of electron spectra and some problems in the thermodynamics of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Alisultanov, Z. Z., E-mail: zaur0102@gmail.com [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)

    2016-02-15

    The expressions for the energy spectra of monolayer, bilayer, and multilayer graphene, as well as epitaxial graphene, are derived using the quantum Green’s functions method. Analytic expressions are obtained for the densities of states of these systems. It is shown that a bandgap can appear the spectrum of an epitaxial graphene bilayer. A number of problems in the thermodynamics of electrons in free and epitaxial graphene layers are considered as applications. Analytic expressions are obtained for the chemical potential and heat capacity in the limiting cases of low and high temperatures. Quantum oscillations of heat capacity in graphene are analyzed taking into account the Coulomb interaction. The Berry phase of epitaxial graphene is investigated.

  18. Near-infrared photoluminescence enhancement in Ge/CdS and Ge/ZnS Core/shell nanocrystals: utilizing IV/II-VI semiconductor epitaxy.

    Science.gov (United States)

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II-VI, III-V and IV-VI semiconductor quantum dots. Here, we use relatively unexplored IV/II-VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II-VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II-VI nanocrystals are reproducibly 1-3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II-VI nanocrystals. We expect this synthetic IV/II-VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  19. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  20. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  1. Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

    Science.gov (United States)

    Bae, Sung Geun; Jeon, Injun; Jeon, Hunsoo; Kim, Kyoung Hwa; Yang, Min; Yi, Sam Nyung; Lee, Jae Hak; Ahn, Hyung Soo; Yu, Young Moon; Sawaki, Nobuhiko; Kim, Suck-Whan

    2018-01-01

    We prepared InGaN light-emitting diodes (LEDs) with the active layers grown from a mixed source of Ga–In–N materials on an n-type GaN substrate by a selective-area growth method and three fabrication steps: photolithography, epitaxial layer growth, and metallization. The preparation followed a previously developed experimental process using apparatus for mixed-source hydride vapor-phase epitaxy (HVPE), which consisted of a multi-graphite boat, for insulating against the high temperature and to control the growth rate of epilayers, filled with the mixed source on the inside and a radio-frequency (RF) heating coil for heating to a high temperature (T > 900 °C) and for easy control of temperature outside the source zone. Two types of LEDs were prepared, with In compositions of 11.0 and 6.0% in the InGaN active layer, and room-temperature electroluminescence measurements exhibited a main peak corresponding to the In composition at either 420 or 390 nm. The consecutive growth of InGaN LEDs by the mixed-source HVPE method provides a technique for the production of LEDs with a wide range of In compositions in the active layer.

  2. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

    2008-01-01

    a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...... optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown...

  3. High quantum efficiency ultraviolet/blue AlGaN /InGaN photocathodes grown by molecular-beam epitaxy

    Science.gov (United States)

    Leopold, D. J.; Buckley, J. H.; Rebillot, P.

    2005-08-01

    Enormous technological breakthroughs have been made in optoelectronic devices through the use of advanced heteroepitaxial-semiconductor crystal-growth techniques. This technology is being extended toward enhanced ultraviolet/blue single-photon detection through the design and fabrication of atomically tailored heteroepitaxial GaAlN /GaInN photocathode device structures. The AlGaN /InGaN system is ideal because the band gap can be tailored over an energy range from 0.8 to 6.2 eV and epitaxial thin-film layers can be grown directly on optically transparent sapphire substrates. Although a single p-type GaN layer activated with cesium can produce reasonably high quantum efficiency in the ultraviolet wave band, a more complex design is necessary to achieve high levels extending into the blue region. In the present work, band-gap engineering concepts have been utilized to design heterostructure photocathodes. The increased level of sophistication offered by this approach has been exploited in an attempt to precisely control photoelectron transport to the photocathode surface. Thin heterostructure layers designed for transmission-mode detection were fabricated by molecular-beam epitaxy. A quantum efficiency of 40% at 250 nm was achieved using a thin, compositionally graded GaN /InGaN layer, epitaxially grown on a sapphire substrate. Further improvements are anticipated through continued optimization, defect reduction, and more complex photocathode designs.

  4. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  5. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Semenov, A. N., E-mail: semenov@beam.ioffe.ru; Meltser, B. Ya.; Solov' ev, V. A.; Komissarova, T. A.; Sitnikova, A. A.; Kirylenko, D. A.; Nadtochyi, A. M.; Popova, T. V.; Kop' ev, P. S.; Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2011-10-15

    AlInSb layers are grown on highly lattice-mismatched GaAs (100) substrates by molecular-beam epitaxy (MBE) and studied in situ by reflection high-energy electron diffraction and ex situ by scanning and transmission electron microscopy (SEM and TEM). It is shown that one feature of AlInSb/GaAs heterostructure features is a high probability of forming microtwins; methods for decreasing their concentration are proposed. To initiate AlInSb growth on GaAs substrates under high lattice-mismatch ({approx}14.5%) conditions and to stimulate the transition to 2D growth, the GaAs layer surface was preliminarily exposed to an antimony flux followed by deposition of an intermediate AlSb buffer layer. The optimization of initial MBE growth stages of Sb-containing layers on the GaAs surface allows a decrease in the defect density in the GaAs/AlInSb heterostructures more than by two orders of magnitude, including a drastic decrease in the microtwin density. Optimal MBE growth conditions for Al{sub x}Al{sub 1-x}Sb are determined in a wide composition range (0 < x < 0.3). The TEM and SEM studies confirm the high structural quality of grown GaAs/AlInSb heterostructures. Hall-effect measurements showed the dependence of the carrier mobility and concentration on the aluminum content in AlInSb layers and allowed preliminary conclusions on scattering mechanisms.

  6. Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Science.gov (United States)

    Ben Aziza, Zeineb; Henck, Hugo; Pierucci, Debora; Silly, Mathieu G; Lhuillier, Emmanuel; Patriarche, Gilles; Sirotti, Fausto; Eddrief, Mahmoud; Ouerghi, Abdelkarim

    2016-10-07

    Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

  7. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  8. Thin-film GaN Schottky diodes formed by epitaxial lift-off

    Science.gov (United States)

    Wang, Jingshan; Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Allen, Noah; Guido, Louis; Xie, Jinqiao; Beam, Edward; Fay, Patrick

    2017-04-01

    The performance of thin-film GaN Schottky diodes fabricated using a large-area epitaxial lift-off (ELO) process is reported in this work. Comparison of the device characteristics before and after lift-off processing reveals that the Schottky barrier height remains unchanged by the liftoff processing and is consistent with expectations based on metal-semiconductor work function differences, with a barrier height of approximately 1 eV obtained for Ni/Au contacts on n- GaN. However, the leakage current in both reverse and low-forward-bias regimes is found to improve significantly after ELO processing. Likewise, the ideality factor of the Schottky diodes also improves after ELO processing, decreasing from n = 1.12-1.18 before ELO to n = 1.04-1.10 after ELO. A possible explanation for the performance improvement obtained for Schottky diodes after substrate removal by ELO processing is the elimination of leakage paths consisting of vertical leakage along threading dislocations coupled with lateral conduction through the underlying n+ buffer layer that is removed in the ELO process. Epitaxial liftoff with GaN may enable significant improvement in device performance and economics for GaN-based electronics and optoelectronics.

  9. Sub-monolayer growth of titanium, cobalt, and palladium on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Sokolova, Anastasia; Kilchert, Franziska; Schneider, M. Alexander [Lehrstuhl fuer Festkoerperphysik, Friedrich-Alexander Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Link, Stefan; Stoehr, Alexander; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2017-11-15

    We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene on SiC(0001) and studied the early stages of growth in the sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three metals do not wet the substrate and Ostwalt ripening occurs at temperatures below 400 K. The analysis of the epitaxial orientation of the metal adislands revealed their specific alignment to the graphene lattice. It is found that the apparent height of the islands as measured by STM strongly deviates from their true topographic height. This is interpreted as an indication of the presence of scattering processes within the metal particles that increase the transparency of the metal-graphene interface for electrons. Even large islands are easily picked up by the tip of the STM allowing insight into the bonding between metal island and graphene surface and into mechanisms leading to metal intercalation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

    Science.gov (United States)

    Ghosh, Aheli; Clavel, Michael B.; Nguyen, Peter D.; Meeker, Michael A.; Khodaparast, Giti A.; Bodnar, Robert J.; Hudait, Mantu K.

    2017-09-01

    The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ˜0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness MOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with Ge MOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.

  11. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  12. Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

    Science.gov (United States)

    Gogneau, Noelle; Ben Gouider Trabelsi, Amira; Silly, Mathieu G; Ridene, Mohamed; Portail, Marc; Michon, Adrien; Oueslati, Mehrezi; Belkhou, Rachid; Sirotti, Fausto; Ouerghi, Abdelkarim

    2014-01-01

    Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100) epilayers grown by chemical vapor deposition on Si(100) substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100)/Si(100) are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. PMID:25339846

  13. Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jin-Hua, E-mail: zhaojinhuazjh@gmail.com [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Qin, Xi-Feng; Wang, Feng-Xiang; Fu, Gang [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Wang, Xue-Lin [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Ministry of Education, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-12-15

    Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed into a honeycomb crystal lattice and is attracting tremendous interest since being discovered in 2004. Epitaxial growth of graphene on silicon carbide (SiC) is an effective method to obtain high quality layers. In this work, the effects of irradiation on epitaxial SiC/graphene were studied. The samples were irradiated with Nitrogen and Argon ions at an energy of 200 keV and different fluence with 4 × 10{sup 12} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. The results of Raman measurements indicate that ion beam irradiation causes defects and disorder in the graphene crystal structure, and the level of defects increases with increasing ion fluence. Surface morphology images are obtained by atomic force microscope (AFM). This work is valuable for the potential application of epitaxial graphene on SiC in the field of optoelectronics devices.

  14. Multilayer epitaxial graphene grown on the (SiC 000 1-bar) surface; structure and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H [The Georgia Institute of Technology, Atlanta, Georgia 30332-0430 (United States); Tejeda, A [Institut Jean Lamour, CNRS - Univ. de Nancy - UPV-Metz, 54506 Vandoeuvre les Nancy (France); Taleb-Ibrahimi, A [UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette (France); Le Fevre, P; Bertran, F [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette (France); Soukiassian, P; Martinotti, D [Commissariat a l' Energie Atomique, SIMA, DSM-IRAMIS-SPCSI, Saclay, 91191 Gif sur Yvette (France)

    2010-09-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  15. Cs/CsPbX3 (X = Br, Cl) epitaxial heteronanocrystals with magic-angle stable/metastable grain boundary

    Science.gov (United States)

    Zhang, Yumeng; Fan, Baolu; Wu, Wenhui; Fan, Jiyang

    2017-05-01

    Metal-semiconductor heteronanostructures are crucial building blocks of nanoscale electronic and optoelectronic devices. However, the lattice misfit remains a challenge in constructing heteronanostructures. Perovskite nanocrystals are superior candidates for constructing nanodevices owing to excellent optical, ferroelectric, and superconducting properties. We report the epitaxial growth of lattice-matched Cs/CsPbBr3 metal-semiconductor heteronanocrystals in a liquid medium. The well-crystallized ultrathin Cs layers grow epitaxially on the surfaces of colloidal CsPbBr3 nanocrystals, forming heteronanocrystals with interface diameters of several nanometers. Most of them are pseudomorphic with coherent interfaces free from dislocations, and the others exhibit discrete high-angle grain boundaries. The model based on the calculation of the elastic potential energy of the epilayer and analysis of the near-coincidence sites explains well the experimental result. The analysis shows that the excellent lattice match between the metal and the semiconductor ensures the ideal epitaxial-growth of both Cs/CsPbBr3 and Cs/CsPbCl3 heteronanocrystals. Such metal/semiconductor heteronanocrystals pave the way for developing perovskite-based nanodevices.

  16. Comparison of a stoichiometric analysis of Fe3-delta O4 layers by magneto-optical Kerr spectroscopy with Mossbauer results

    NARCIS (Netherlands)

    Fontijn, WFJ; vanderHeijden, PAA; Voogt, FC; Hibma, T; vanderZaag, PJ

    The stoichiometry of a series of 300 Angstrom thick Fe3-deltaO4 layers grown by means of molecular beam epitaxy on MgO(100) has been investigated both by magneto-optical Ken spectroscopy and by Mossbauer spectroscopy, The layers consisted of a 200 Angstrom thick Fe3-deltaO4 layer grown with the

  17. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  18. Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

    Science.gov (United States)

    Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

    2018-01-01

    We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

  19. Structure of epitaxial SrIrO.sub.3./sub. perovskite studied by interference between X-ray waves diffracted by the substrate and the thin film

    Czech Academy of Sciences Publication Activity Database

    Horák, L.; Kriegner, D.; Liu, J.; Frontera, C.; Martí, Xavier; Holý, V.

    2017-01-01

    Roč. 50, Apr (2017), s. 385-398 ISSN 1600-5767 R&D Projects: GA ČR GB14-37427G; GA MŠk(CZ) LG13058 Institutional support: RVO:68378271 Keywords : perovskites * epitaxial layers * X-ray diffraction * interference Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.495, year: 2016

  20. Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

    International Nuclear Information System (INIS)

    Chen, Z.B.; Lei, W.; Chen, B.; Wang, Y.B.; Liao, X.Z.; Tan, H.H.; Zou, J.; Ringer, S.P.; Jagadish, C.

    2013-01-01

    A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed