WorldWideScience

Sample records for transparent silicon nitride

  1. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  2. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  3. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  4. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  5. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  6. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  7. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  8. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  9. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  10. Scratch-resistant transparent boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Dekempeneer, E.H.A.; Kuypers, S.; Vercammen, K.; Meneve, J.; Smeets, J. [Vlaamse Instelling voor Technologisch Onderzoek (VITO), Mol (Belgium); Gibson, P.N.; Gissler, W. [Joint Research Centre of the Commission of the European Communities, Institute for Advanced Materials, Ispra (Vatican City State, Holy See) (Italy)

    1998-03-01

    Transparent boron nitride (BN) coatings were deposited on glass and Si substrates in a conventional capacitively coupled RF PACVD system starting from diborane (diluted in helium) and nitrogen. By varying the plasma conditions (bias voltage, ion current density), coatings were prepared with hardness values ranging from 2 to 12 GPa (measured with a nano-indenter). Infrared absorption measurements indicated that the BN was of the hexagonal type. A combination of glancing-angle X-ray diffraction measurements and simulations shows that the coatings consist of hexagonal-type BN crystallites with different degrees of disorder (nanocrystalline or turbostratic material). High-resolution transmission electron microscopy analysis revealed the presence of an amorphous interface layer and on top of this interface layer a well-developed fringe pattern characteristic for the basal planes in h-BN. Depending on the plasma process conditions, these fringe patterns showed different degrees of disorder as well as different orientational relationships with respect to the substrate surface. These observations were correlated with the mechanical properties of the films. (orig.) 14 refs.

  11. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  12. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  13. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  14. Covalent biofunctionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  15. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  16. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  17. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  18. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  19. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  20. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  1. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  2. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  3. The Effect of Polymer Char on Nitridation Kinetics of Silicon

    Science.gov (United States)

    Chan, Rickmond C.; Bhatt, Ramakrishna T.

    1994-01-01

    Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

  4. Four-Wave Mixing in Silicon-Rich Nitride Waveguides

    DEFF Research Database (Denmark)

    Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

    2015-01-01

    We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

  5. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  6. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  7. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  8. Method of production of hollow silicon nitride articles

    International Nuclear Information System (INIS)

    Parr, N.L.; Brown, R.L.

    1971-01-01

    The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

  9. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  10. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

  11. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  12. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  13. Second-harmonic generation in substoichiometric silicon nitride layers

    Science.gov (United States)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  14. Cavitation contributes substantially to tensile creep in silicon nitride

    International Nuclear Information System (INIS)

    Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

    1995-01-01

    During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress (var-epsilon ∝ σ n , 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride

  15. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  16. Origin of interfacial charging in irradiated silicon nitride capacitors

    International Nuclear Information System (INIS)

    Hughes, R.C.

    1984-01-01

    Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO 2 -Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution

  17. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  18. Silicon nitride photonics: from visible to mid-infrared wavelengths

    Science.gov (United States)

    Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

    2018-02-01

    Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

  19. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  20. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  1. Damage initiation and evolution in silicon nitride under\

    Czech Academy of Sciences Publication Activity Database

    Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

    360-361, AUG (2016), s. 147-159 ISSN 0043-1648 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Rollingcontactfatigue * Subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.531, year: 2016

  2. Hardness and thermal stability of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

    2001-01-01

    The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

  3. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  4. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  5. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  6. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  7. Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

    NARCIS (Netherlands)

    Rosso, M.

    2009-01-01

    Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

  8. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    Neamen, D.; Shedd, W.; Buchanan, B.

    1975-01-01

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  9. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  10. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  11. High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

    NARCIS (Netherlands)

    Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

    2005-01-01

    The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

  12. High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

    NARCIS (Netherlands)

    Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

    2004-01-01

    The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

  13. Some new aspects of microstructural development during sintering of silicon nitride

    International Nuclear Information System (INIS)

    Feuer, H.; Woetting, G.; Gugel, E.

    1994-01-01

    The mechanical properties of silicon nitride ceramics strongly depend on their microstructure. However, there is still a lively discussion about the parameters controlling the microstructural development. The current research was stimulated by the observation that a bimodal grain-size distribution in dense silicon nitride has a very beneficial effect on the mechanical properties, especially on the fracture toughness. This paper is focused on the relationship between the α-β-transformation and the densification of silicon nitride powders with different characteristics and sintering additives. Effects of β-grains originally present in the silicon nitride powder, of added β-silicon nitride seeds and of β-crystals formed by the α/β-transformation on the resulting microstructure and on the properties are discussed. The results are summarised in a model describing prerequisites and processing conditions, which are necessary to achieve a bimodal microstructure, i. e. a self-reinforced silicon nitride ceramic. (orig.)

  14. Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

    Science.gov (United States)

    Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

    2017-01-01

    Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

  15. SONOS memories with embedded silicon nanocrystals in nitride

    International Nuclear Information System (INIS)

    Liu, Mei-Chun; Chiang, Tsung-Yu; Chao, Tien-Sheng; Kuo, Po-Yi; Lei, Tan-Fu; Chou, Ming-Hong; Wu, Yi-Hong; Cheng, Ching-Hwa; Liu, Sheng-Hsien; Yang, Wen-Luh; You, Hsin-Chiang

    2008-01-01

    We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N 2 O is better than O 2 oxide. Retention property is improved when the thickness of N 2 O is increased to 3.0 nm

  16. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  17. Niobium nitride Josephson junctions with silicon and germanium barriers

    International Nuclear Information System (INIS)

    Cukauskas, E.J.; Carter, W.L.

    1988-01-01

    Niobium nitride based junctions with silicon, germanium, and composite silicon/germanium barriers were fabricated and characterized for several barrier compositions. The current-voltage characteristics were analyzed at several temperatures using the Simmons model and numerical integration of the WKB approximation for the average barrier height and effective thickness. The zero voltage conductance was measured from 1.5 K to 300 K and compared to the Mott hopping conductivity model and the Stratton tunneling temperature dependence. Conductivity followed Mott conductivity at temperatures above 60 K for junctions with less than 100 angstrom thick barriers

  18. Corrosion of silicon nitride in high temperature alkaline solutions

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  19. Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

    International Nuclear Information System (INIS)

    Nguyen, S.V.; Kerbaugh, M.

    1988-01-01

    This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

  20. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  1. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  2. Frequency effects and properties of plasma deposited fluorinated silicon nitride

    International Nuclear Information System (INIS)

    Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

    1988-01-01

    The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

  3. Thermogravimetric analysis of silicon carbide-silicon nitride fibers at ambient to 1000 C in air

    Science.gov (United States)

    Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis of silicon carbide-silicon nitride fibers was carried out at ambient to 1000 C in air. The weight loss over this temperature range was negligible. In addition, the oxidative stability at high temperature for a short period of time was determined. Fibers heated at 1000 C in air for fifteen minutes showed negligible weight loss (i.e., less than 1 percent).

  4. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  5. High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

    International Nuclear Information System (INIS)

    McNallan, M.

    1993-01-01

    Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

  6. Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

    NARCIS (Netherlands)

    Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

    2016-01-01

    In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

  7. Hydrogen concentration profiles and chemical bonding in silicon nitride

    International Nuclear Information System (INIS)

    Peercy, P.S.; Stein, H.J.; Doyle, B.L.; Picraux, S.T.

    1978-01-01

    The complementary technique of nuclear reaction analysis and infrared absorption were used to study the concentration profile and chemical bonding of hydrogen in silicon nitride for different preparation and annealing conditions. Silicon nitride prepared by chemical vapor deposition from ammonia-silane mixtures is shown to have hydrogen concentrations of 8.1 and 6.5 at.% for deposition temperatures of 750 and 900 0 C, respectively. Plasma deposition at 300 0 C from these gases results in hydrogen concentrations of approximately 22 at.%. Comparison of nuclear reaction analysis and infrared absorption measurements after isothermal annealing shows that all of the hydrogen retained in the films remains bonded to either silicon or nitrogen and that hydrogen release from the material on annealing is governed by various trap energies involving at least two N-H and one Si-H trap. Reasonable estimates of the hydrogen release rates can be made from the effective diffusion coefficient obtained from measurements of hydrogen migration in hydrogen implanted and annealed films

  8. Influence of the initial grain size of silicon on microstructure and mechanical properties of reaction-sintered silicon nitride

    International Nuclear Information System (INIS)

    Heinrich, J.

    1977-01-01

    The influence of the initial grain size of the silicon powder on the microstructure and the resulting mechanical properties are studied. The smaller the grain size of the silicon powders used, the higher will be the degree of reaction at the beginning of the nitridation reaction and the higher the amount of α-modification in the fully nitridated samples. Moreover, the nitrification time can be considerably shortened when fine-grained silicon powders ( [de

  9. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  11. Tensile creep behavior in an advanced silicon nitride

    International Nuclear Information System (INIS)

    Lofaj, F.

    2000-01-01

    Tensile creep behavior and changes in the microstructure of the advanced silicon nitride, SN 88M, were studied at temperatures from 1250 to 1400 C to reveal the creep resistance and lifetime-controlling processes. Assuming power law dependence of the minimum strain rate on stress, stress exponents from 6 to 8 and an apparent activation energy of 780 kJ/mol were obtained. Extensive electron microscopy observations revealed significant changes in the crystalline secondary phases and creep damage development. Creep damage was classified in two groups: 'inter-granular' defects in the amorphous boundary phases, and 'intra-granular' defects in silicon nitride grains. The inter-granular defects involved multigrain junction cavities, two-grain junction cavities, microcracks and cracks. The intra-granular defects included broken large grains, small symmetrical and asymmetrical cavities, and crack-like intragranular cavities. Cavities are generated continuously during the whole deformation starting from the threshold strain of ∝0.1%, and they contribute linearly to the tensile strain. Cavities produce more than 90% of the total tensile strain, and it is concluded that cavitation is the main creep mechanism in silicon nitride ceramics. The multigrain junction cavities are considered to be the most important for generating new volume and producing tensile strain. The Luecke and Wiederhorn (L and W) creep model, based on cavitation at multigrain junctions according to an exponential law, was proven to correspond to the stress dependence of the minimum strain rate. A qualitative model based on the L and W model was suggested and expanded to include intragranular cavitation. The basic mechanisms involve a repeating of the sequence grain boundary sliding (GBS) => cavitation at multigrain junctions => viscous flow and dissolution-precipitation. (orig.)

  12. Nanostructured silicon nitride from wheat and rice husks

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, D.C. 20375 (United States)

    2016-04-07

    Nanoparticles, submicron-diameter tubes, and rods of Si{sub 3}N{sub 4} were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si{sub 3}N{sub 4} with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si{sub 3}N{sub 4}. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si{sub 3}N{sub 4} combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

  13. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  14. An Annotated Bibliography on Silicon Nitride for Structural Applications

    Science.gov (United States)

    1977-03-01

    annotated in this bibliography with each entry under the name of the specific author. 16. Canteloup, J., and Mocellin , A., "Synthesis of...thinning. Oxidation of the SJ3N4 grains started at the grain boundaries. 81. Torre, J. P., and Mocellin , A., "On the Existence of Si-AI-O-N Solid...Torre, J. P., and Mocellin , A., "Some Effects of Al and O2 on the Nitridation of Silicon Compacts", J. Mater. Sei., 11., 1725-1733(1976). Highest final

  15. Elastic properties of silicon nitride ceramics reinforced with graphene nanofillers

    Czech Academy of Sciences Publication Activity Database

    Seiner, Hanuš; Ramírez, C.; Koller, M.; Sedlák, Petr; Landa, Michal; Miranzo, P.; Belmonte, M.; Osendí, M. I.

    2015-01-01

    Roč. 87, December (2015), s. 675-680 ISSN 0264-1275 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 Keywords : multilayer graphene * graphene oxide (GO) * silicon nitride * elastic constants * elastic modulus * shear modulus Subject RIV: JI - Composite Materials Impact factor: 3.997, year: 2015 http://www.sciencedirect.com/science/article/pii/S0264127515302938/pdfft?md5=571e00fd7f976e9b66ed789ae2a868b2&pid=1-s2.0-S0264127515302938-main.pdf

  16. Quality factor improvement of silicon nitride micro string resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Malm, Bjarke; Boisen, Anja

    2011-01-01

    Resonant micro and nano strings are of interest for sensor applications due to their extraordinary high quality factors, low mass and tunable resonant frequency. It has been found that the quality factor of strings is usually limited by clamping loss. In this work, clamping loss has been addressed...... by varying the clamping design and string geometry. We present silicon nitride micro strings with quality factors (Q) of up to 4 million in high vacuum achieved by minimizing clamping loss. For applications such as for chemical sensing, strings need to vibrate at atmospheric pressure. Maximal quality factor...

  17. Ultra-compact silicon nitride grating coupler for microscopy systems

    OpenAIRE

    Zhu, Yunpeng; Wang, Jie; Xie, Weiqiang; Tian, Bin; Li, Yanlu; Brainis, Edouard; Jiao, Yuqing; Van Thourhout, Dries

    2017-01-01

    Grating couplers have been widely used for coupling light between photonic chips and optical fibers. For various quantum-optics and bio-optics experiments, on the other hand, there is a need to achieve good light coupling between photonic chips and microscopy systems. Here, we propose an ultra-compact silicon nitride (SiN) grating coupler optimized for coupling light from a waveguide to a microscopy system. The grating coupler is about 4 by 2 mu m(2) in size and a 116 nm 1 dB bandwidth can be...

  18. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    Science.gov (United States)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  19. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  20. Compressibility and thermal expansion of cubic silicon nitride

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lindelov, H.; Gerward, Leif

    2002-01-01

    The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk...... compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond...

  1. The atomic and electronic structure of amorphous silicon nitride

    International Nuclear Information System (INIS)

    Alvarez, F.; Valladares, A.A.

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  2. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  3. Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

    Science.gov (United States)

    Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

    2018-01-01

    Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

  4. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  5. Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

    Science.gov (United States)

    Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

    2007-05-28

    We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

  6. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  7. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  8. Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

    International Nuclear Information System (INIS)

    Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

    1992-01-01

    This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

  9. The relationship of microstructure and temperature to fracture mechanics parameters in reaction bonded silicon nitride

    International Nuclear Information System (INIS)

    Jennings, H.M.; Dalgleish, B.J.; Pratt, P.L.

    1978-01-01

    The development of physical properties in reaction bonded silicon nitride has been investigated over a range of temperatures and correlated with microstructure. Fracture mechanics parameters, elastic moduli, strength and critical defect size have been determined. The nitrided microstructure is shown to be directly related to these observed properties and these basic relationships can be used to produce material with improved properties. (orig.) [de

  10. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  11. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  12. Studies on silicon nitrides; Chikka keiso ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-10-31

    Sinters of silicon nitrides have excellent properties as a structural material, but their technological repercussion effect is not as much as has been expected. The cause is in insufficient understanding on the mutual relationship between microstructures and mechanical properties. Therefore, methods of controlling structures were first discussed in the studies on synthesis of high-tenacity ceramics. In order to achieve high reliability in material strength, discussions were given on means to have a structure developed with high reproducibility. Development was performed on {beta} powder which shows no abnormal grain growth and is stable at elevated temperatures. Then, quantitative evaluation was made on factors to manifest a self-compounding structure with columnar particles grown in ultrafine particles. The relationship between its chemical composition, microstructure and mechanical properties was also discussed. Particle shapes of silicon carbides and their fracture tenacity values were considered theoretically by using a drawing model. To evaluate the microstructure, it is important to determine the grain boundary composition, whereas an electric field radiation type high-performance electron microscope was developed. In discussing the fracture mechanism, a model was structured for behavior of covalent binding crystals against external stress. 164 refs., 95 figs., 10 tabs.

  13. Molecular Surveillance of Viral Processes Using Silicon Nitride Membranes

    Directory of Open Access Journals (Sweden)

    Deborah F. Kelly

    2013-03-01

    Full Text Available Here we present new applications for silicon nitride (SiN membranes to evaluate biological processes. We determined that 50-nanometer thin films of SiN produced from silicon wafers were sufficiently durable to bind active rotavirus assemblies. A direct comparison of SiN microchips with conventional carbon support films indicated that SiN performs equivalent to the traditional substrate to prepare samples for Electron Microscopy (EM imaging. Likewise, SiN films coated with Ni-NTA affinity layers concentrated rotavirus particles similarly to affinity-coated carbon films. However, affinity-coated SiN membranes outperformed glow-discharged conventional carbon films 5-fold as indicated by the number of viral particles quantified in EM images. In addition, we were able to recapitulate viral uncoating and transcription mechanisms directed onto the microchip surfaces. EM images of these processes revealed the production of RNA transcripts emerging from active rotavirus complexes. These results were confirmed by the functional incorporation of radiolabeled nucleotides into the nascent RNA transcripts. Collectively, we demonstrate new uses for SiN membranes to perform molecular surveillance on life processes in real-time.

  14. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  15. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, A.T.; Baggerman, J.; Paulusse, J.M.J.; Rijn, van C.J.M.; Zuilhof, H.

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable

  16. Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

    NARCIS (Netherlands)

    Nguyen, Ai T.; Baggerman, Jacob; Paulusse, Jos Marie Johannes; van Rijn, Cees J.M.; Zuilhof, Han

    2011-01-01

    Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable Si−C

  17. Reaction sintering of a clay-containing silicon nitride bonded silicon carbide refractory

    International Nuclear Information System (INIS)

    Swenser, S.P.; Cheng, Y.B.

    1998-01-01

    Aspects of the reaction sequence for the reaction bonding of a cast refractory, which in the green state was composed of 79 wt-% SiC grit, 16 wt-% Si powder and 5 wt-% clay were established. As it was fired up to 1600 deg C in flowing N 2 (g), weight gains were noted and phase evolution was monitored by X-ray diffraction. However, details of the reaction sequence were not determined directly from this material because several reaction-bonding processes occurred simultaneously. Reaction features were ascertained by contrasting the weight changes and phase evolution in the refractory with those observed during reaction-bonding of (a) Si and clay without the SiC and (b) SiC and clay without the Si. In addition to silicon nitridation and the development of sialon phases by silicothermal and carbothermal reduction-nitridation processes, indirect evidence suggested that α-Si 3 N 4 formed by the carbothermal reduction-nitridation (CRN) of SiO(g). Copyright (1998) Australasian Ceramic Society

  18. Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

    International Nuclear Information System (INIS)

    Keim, E.G.; Aite, K.

    1989-01-01

    Thin silicon nitride films (100-210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar + sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results. (orig.)

  19. Microstructural and reliability in grinding of silicon nitride

    International Nuclear Information System (INIS)

    Liu, C.-C.

    2004-01-01

    A sintered Si 3 N 4 matrix has been characterized by TEM. The film thickness distribution of Si 3 N 4 was measured by high resolution transmission electron microscopy (HREM). Surface grinding is performed on two table speeds of 0.08 and 0.25 m s -1 with different depth of cut. The ground surfaces were observed with scanning electron microscopy (SEM). The surface texture was found to have greater dependence on depth of cut and table speed. The surface roughness is improved after smaller depth of cut. The flexural strength of ground specimens were measured by four-point flexure tests. The effect of depth of cut during grinding on the flexural strength and reliability of silicon nitride is investigated. The large depth of cut of 30 μm/pass resulted in a further decreased in strength of 540 MPa and a Weibull modulus of 7.5. When the depth of cut of 5 μm/pass were subjected to the ground specimens, the average strength was increased to 670 MPa and Weibull modulus to 9.1

  20. Fabrication and properties of graphene reinforced silicon nitride composite materials

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yaping; Li, Bin, E-mail: libin@nudt.edu.cn; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-09-17

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si{sub 3}N{sub 4} ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si{sub 3}N{sub 4} ceramic matrix. β-Si{sub 3}N{sub 4,} O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si{sub 3}N{sub 4}, Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods.

  1. Bioactive silicon nitride: A new therapeutic material for osteoarthropathy

    Science.gov (United States)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Sugano, Nobuhiko; Bock, Ryan M.; McEntire, Bryan; Bal, Sonny B.

    2017-03-01

    While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant’s surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies of this biological synergy are explored within this paper by examining the peculiar surface chemistry of a relatively new bioceramic, silicon nitride (Si3N4). Building upon prior research, this paper aims at obtaining new insights into the biological interactions between Si3N4 and living cells, as a consequence of the off-stoichiometric chemical nature of its surface at the nanometer scale. We show here yet unveiled details of surface chemistry and, based on these new data, formulate a model on how, ultimately, Si3N4 influences cellular signal transduction functions and differentiation mechanisms. In other words, we interpret its reciprocity with living cells in chemical terms. These new findings suggest that Si3N4 might provide unique new medicinal therapies and effective remedies for various bone or joint maladies and diseases.

  2. Fabrication and properties of graphene reinforced silicon nitride composite materials

    International Nuclear Information System (INIS)

    Yang, Yaping; Li, Bin; Zhang, Changrui; Wang, Siqing; Liu, Kun; Yang, Bei

    2015-01-01

    Silicon nitride (Si 3 N 4 ) ceramic composites reinforced with graphene platelets (GPLs) were prepared by hot pressed sintering and pressureless sintering respectively. Adequate intermixing of the GPLs and the ceramic powders was achieved in nmethyl-pyrrolidone (NMP) under ultrasonic vibration followed by ball-milling. The microstructure and phases of the Si 3 N 4 ceramic composites were investigated by Field Emission Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The effects of GPLs on the composites' mechanical properties were analyzed. The results showed that GPLs were well dispersed in the Si 3 N 4 ceramic matrix. β-Si 3 N 4, O′-sialon and GPLs were present in the hot-pressed composites while pressureless sintered composites contain β-Si 3 N 4 , Si, SiC and GPLs. Graphene has the potential to improve the mechanical properties of both the hot pressed and pressureless sintered composites. Toughening effect of GPLs on the pressureless sintered composites appeared more effective than that on the hot pressed composites. Toughening mechanisms, such as pull-out, crack bridging and crack deflection induced by GPLs were observed in the composites prepared by the two methods

  3. Ag doped silicon nitride nanocomposites for embedded plasmonics

    Energy Technology Data Exchange (ETDEWEB)

    Bayle, M.; Bonafos, C., E-mail: bonafos@cemes.fr; Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, Cedex 04 (France); Khomenkova, L.; Gourbilleau, F. [CIMAP, CNRS/CEA/ENSICAEN/UCBN, 6 Boulevard Maréchal Juin, 14050 Caen, Cedex 4 (France)

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  4. Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

    Directory of Open Access Journals (Sweden)

    Ashim Dhakal

    2017-02-01

    Full Text Available Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies.

  5. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  6. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  7. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  8. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  9. Process for producing silicon nitride based articles of high fracture toughness and strength

    Science.gov (United States)

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  10. Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

    2002-07-01

    We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

  11. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  12. Elastocapillary folding of three dimensional micro-structures using water pumped through the wafer via a silicon nitride tube

    NARCIS (Netherlands)

    Legrain, A.B.H.; Berenschot, Johan W.; Sanders, Remco G.P.; Ma, Kechun; Tas, Niels Roelof; Abelmann, Leon

    2011-01-01

    In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water

  13. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  14. Transient and steady-state erosion of in-situ reinforced silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Karasek, K.R. [Allied Signal Research and Technology, Des Plaines, IL (United States); Whalen, P.J. [Allied Signal, Inc., Morristown, NJ (United States); Rateick, R.G. Jr. [Allied Signal Aerospace, South Bend, IN (United States); Hamilton, A.C. [Michigan Technological Univ., Houghton, MI (United States); Routbort, J.L. [Argonne National Lab., IL (United States)

    1994-10-01

    Relative to most other materials silicon nitride is very erosion resistant. However, the resulting surface flaws degrade strength - a serious concern for component designers. AlliedSignal Ceramic Components GS-44 in-situ reinforced silicon nitride was eroded in a slinger apparatus. Both transient (extremely low level) and steady-state erosion regimes were investigated. Alumina particles with effective average diameters of 140 Jim and 63 {mu}m were used at velocities of 50 m/s, 100 m/s, and 138 m/s. Biaxial tensile strength was measured. Strength decreased by about 15% after a very small erodent dosage and then remained virtually constant with further erosion. In-situ reinforcement produces R-curve behavior in which the fracture toughness increases with crack size. The effect of this is quite dramatic with strength loss being significantly less than expected for a normal silicon nitride with constant fracture toughness.

  15. Preparation and mechanical properties of carbon nanotube-silicon nitride nano-ceramic matrix composites

    Science.gov (United States)

    Tian, C. Y.; Jiang, H.

    2018-01-01

    Carbon nanotube-silicon nitride nano-ceramic matrix composites were fabricated by hot-pressing nano-sized Si3N4 powders and carbon nanotubes. The effect of CNTs on the mechanical properties of silicon nitride was researched. The phase compositions and the microstructure characteristics of the samples as well as the distribution of carbon nanotube in the silicon nitride ceramic were analyzed by X-ray diffraction and scanning electron microscope. The results show that the microstructure of composites consists mainly of α-Si3N4, β-Si3N4, Si2N2O and carbon natubes. The addition of proper amount of carbon nanotubes can improve the fracture toughness and the flexural strength, and the optimal amount of carbon nanotube are both 3wt.%. However the Vickers hardness values decrease with the increase of carbon nanotubes content.

  16. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    International Nuclear Information System (INIS)

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

  17. Low-stress silicon nitride layers for MEMS applications

    Science.gov (United States)

    Iliescu, Ciprian; Wei, Jiashen; Chen, Bangtao; Ong, Poh Lam; Tay, Francis E. H.

    2006-12-01

    The paper presents two deposition methods for generation of SiN x layers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode, the combined deposition rate of mix frequency is quite small in order to produce homogenous SiN x layers. In the second method, a high power which was up to 600 W has been used, may also produce low residual stress (0-20 MPa), with higher deposition rate (250 to 350 nm/min). The higher power not only leads to higher dissociation rates of gases which results in higher deposition rates, but also brings higher N bonding in the SiN x films and higher compressive stress from higher volume expansion of SiN x films, which compensates the tensile stress and produces low residual stress. In addition, the paper investigates the influence of other important parameters which have great impact to the residual stress and deposition rates, such as reactant gases flow rate and pressure. By using the final optimized recipe, masking layer for anisotropic wet etching in KOH and silicon nitride cantilever have been successfully fabricated based on the low stress SiN x layers. Moreover, nanoporous membrane with 400nm pores has also been fabricated and tested for cell culture. By cultivating the mouse D1 mesenchymal stem cells on top of the nanoporous membrane, the results showed that mouse D1 mesenchymal stem cells were able to grow well. This shows that the nanoporous membrane can be used as the platform for interfacing with living cells to become biocapsules for biomolecular separation.

  18. Silicon nitride back-end optics for biosensor applications

    Science.gov (United States)

    Romero-García, Sebastian; Merget, Florian; Zhong, Frank C.; Finkelstein, Hod; Witzens, Jeremy

    2013-05-01

    Silicon nitride (SiN) is a promising candidate material for becoming a standard high-performance solution for integrated biophotonics applications in the visible spectrum. As a key feature, its compatibility with the complementary-oxidemetal- semiconductor (CMOS) technology permits cost reduction at large manufacturing volumes that is particularly advantageous for manufacturing consumables. In this work, we show that the back-end deposition of a thin SiN film enables the large light-cladding interaction desirable for biosensing applications while the refractive index contrast of the technology (Δn ≍ 0.5) also enables a considerable level of integration with reduced waveguide bend radii. Design and experimental validation also show that several advantages are derived from the moderate SiN/SiO2 refractive index contrast, such as lower scattering losses in interconnection waveguides and relaxed tolerances to fabrication imperfections as compared to higher refractive index contrast material systems. As a drawback, a moderate refractive index contrast also makes the implementation of compact grating couplers more challenging, due to the fact that only a relatively weak scattering strength can be achieved. Thereby, the beam diffracted by the grating tends to be rather large and consequently exhibit stringent angular alignment tolerances. Here, we experimentally demonstrate how a proper design of the bottom and top cladding oxide thicknesses allows reduction of the full-width at half maximum (FWHM) and alleviates this problem. Additionally, the inclusion of a CMOS-compatible AlCu/TiN bottom reflector further decreases the FWHM and increases the coupling efficiency. Finally, we show that focusing grating designs greatly reduce the device footprint without penalizing the device metrics.

  19. Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

    Science.gov (United States)

    Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

    1984-01-01

    Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

  20. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    Energy Technology Data Exchange (ETDEWEB)

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  1. Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

    International Nuclear Information System (INIS)

    Park, Young-Bae; Rhee, Shi-Woo

    2001-01-01

    Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

  2. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  3. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  4. Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

    2008-12-15

    Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

  5. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  6. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  7. Joining and interface characterization of in situ reinforced silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Asthana, R., E-mail: asthanar@uwstout.edu [Department of Engineering and Technology, 326 FH, University of Wisconsin-Stout, Menomonie, WI 54751 (United States); Singh, M., E-mail: Mrityunjay.Singh@nasa.gov [Ohio Aerospace Institute, NASA Glenn Research Center, Cleveland, OH 44135 (United States); Martinez-Fernandez, J., E-mail: Martinez@us.es [Dpto. Física de la Materia Condensada-ICMSE, Universidad de Sevilla-CSIC, Avda. Reina Mercedes, s/n, 41012 Sevilla (Spain)

    2013-03-05

    Highlights: ► AS800 Si{sub 3}N{sub 4} brazed using oxidation-resistant, high use-temperature braze Cu-ABA. ► Interface enriched in Ti and Si but not in Y, La, and Sr (from Y{sub 2}O{sub 3}, La{sub 2}O{sub 3} and SrO). ► Rapid early-stage kinetic evident in constant layer thickness, composition with time. ► Highly textured large grains of Cu and features associated with plastic deformation. -- Abstract: Copper-base active metal interlayers were used to bond in situ reinforced silicon nitride (Honeywell AS800) at 1317 K for 5 and 30 min in vacuum. The joints were characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), electron back scattered diffraction (EBSD), and transmission electron microscopy (TEM). A Ti-rich interaction zone (∼3.0–3.5 μm thick) formed at the Si{sub 3}N{sub 4}/braze interface. This reaction layer grew toward the inner part of the joint with a featureless microstructure, creating a strong bond. Regions of a Ti-rich phase were frequently found next to the reaction layer but surrounded by the Cu alloy. Extensive Ti and Si enrichments were noted at the interface but there was no evidence of interfacial segregation of Y, La, and Sr (from Y{sub 2}O{sub 3}, La{sub 2}O{sub 3} and SrO, added as sintering aids). The reaction layer thickness and composition did not change when brazing time increased from 5 min to 30 min suggesting rapid growth kinetics in the early stages of reaction. The joints were crack-free and showed features associated with plastic deformation, which indicated that the metal interlayer accommodated strain associated with CTE mismatch. The inner part of the joint consisted of highly textured large grains of the braze alloy.

  8. Life prediction and mechanical reliability of NT551 silicon nitride

    Science.gov (United States)

    Andrews, Mark Jay

    The inert strength and fatigue performance of a diesel engine exhaust valve made from silicon nitride (Si3N4) ceramic were assessed. The Si3N4 characterized in this study was manufactured by Saint Gobain/Norton Industrial Ceramics and was designated as NT551. The evaluation was made utilizing a probabilistic life prediction algorithm that combined censored test specimen strength data with a Weibull distribution function and the stress field of the ceramic valve obtained from finite element analysis. The major assumptions of the life prediction algorithm are that the bulk ceramic material is isotropic and homogeneous and that the strength-limiting flaws are uniformly distributed. The results from mechanical testing indicated that NT551 was not a homogeneous ceramic and that its strength were functions of temperature, loading rate, and machining orientation. Fractographic analysis identified four different failure modes; 2 were identified as inhomogeneities that were located throughout the bulk of NT551 and were due to processing operations. The fractographic analysis concluded that the strength degradation of NT551 observed from the temperature and loading rate test parameters was due to a change of state that occurred in its secondary phase. Pristine and engine-tested valves made from NT551 were loaded to failure and the inert strengths were obtained. Fractographic analysis of the valves identified the same four failure mechanisms as found with the test specimens. The fatigue performance and the inert strength of the Si3N 4 valves were assessed from censored and uncensored test specimen strength data, respectively. The inert strength failure probability predictions were compared to the inert strength of the Si3N4 valves. The inert strength failure probability predictions were more conservative than the strength of the valves. The lack of correlation between predicted and actual valve strength was due to the nonuniform distribution of inhomogeneities present in NT

  9. TOPICAL REVIEW Textured silicon nitride: processing and anisotropic properties

    Directory of Open Access Journals (Sweden)

    Xinwen Zhu and Yoshio Sakka

    2008-01-01

    Full Text Available Textured silicon nitride (Si3N4 has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si3N4, with emphasis on the anisotropic and abnormal grain growth of β-Si3N4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW and templated grain growth (TGG. The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for β-Si3N4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms and the factors affecting texture development. Also, methods of synthesizing the rodlike β-Si3N4 single crystals are presented. Various anisotropic properties of textured Si3 N4 and their origins are thoroughly described and discussed, such as hardness, elastic modulus, bending strength, fracture toughness, fracture energy, creep behavior, tribological and wear behavior, erosion behavior, contact damage behavior and thermal conductivity. Models are analyzed to determine the thermal anisotropy by considering the intrinsic thermal anisotropy, degree of orientation and various microstructure factors. Textured porous Si3N4 with a unique microstructure composed of oriented elongated β-Si3N4 and anisotropic pores is also described for the first time, with emphasis on its unique mechanical and thermal-mechanical properties. Moreover, as an important related material, textured α-Sialon is also reviewed, because the presence of elongated α-Sialon grains allows the production of textured

  10. High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

    Science.gov (United States)

    Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

  11. Nano-structure and tribological properties of B+ and Ti+ co-implanted silicon nitride

    International Nuclear Information System (INIS)

    Nakamura, Naoki; Noda, Katsutoshi; Yamauchi, Yukihiko

    2005-01-01

    Silicon nitride ceramics have been co-implanted with boron and titanium ions at a fluence of 2 x 10 17 ions/cm 2 and an energy of 200 keV. TEM results indicated that the boron and titanium-implanted layers were amorphized separately and titanium nitride nano-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion implantation sequence of boron and titanium ions, with the boron implantation peak shifting to a shallower position when implanted after Ti + -implantation. Wear tests of these ion-implanted materials were carried out using a block-on-ring wear tester under non-lubricated conditions against commercially available silicon nitride materials. The specific wear rate was reduced by ion implantation and showed that the specific wear rate of Ti + -implanted sample was the lowest, followed by B + , Ti + co-implanted and B + -implanted samples

  12. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  13. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    Science.gov (United States)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  14. Size-dependent effective Young’s modulus of silicon nitride cantilevers

    NARCIS (Netherlands)

    Babaei Gavan, K.; Westra, H.J.R.; Van der Drift, E.W.J.M.; Venstra, W.J.; Van der Zant, H.S.J.

    2009-01-01

    The effective Young’s modulus of silicon nitride cantilevers is determined for thicknesses in the range of 20–684 nm by measuring resonance frequencies from thermal noise spectra. A significant deviation from the bulk value is observed for cantilevers thinner than 150 nm. To explain the observations

  15. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  16. Bio-functionalization of silicon nitride-based piezo-resistive ...

    Indian Academy of Sciences (India)

    Methods of bio-functionalize silicon nitride involve process steps to ... substance in applications such as clinical analysis, environmental control and industrial pro- ... anisms could be optical (measure the deflection), or measurement of a change in ... point of care (PoC), and the instrumentation involved is quite sophisticated.

  17. Damage progression in silicon nitride undergoing non-conforming hybrid cyclic contact

    Czech Academy of Sciences Publication Activity Database

    Raga, R.; Khader, I.; Chlup, Zdeněk; Kailer, A.

    2017-01-01

    Roč. 105, DEC (2017), s. 97-110 ISSN 0142-1123 EU Projects: European Commission(XE) 263476 - ROLICER Institutional support: RVO:68081723 Keywords : Silicon nitride * Cyclic contact fatigue * Surface and subsurface damage Subject RIV: JL - Materials Fatigue, Friction Mechanics OBOR OECD: Audio engineering, reliability analysis Impact factor: 2.899, year: 2016

  18. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    Energy Technology Data Exchange (ETDEWEB)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  19. Covalent functionalization of silicon nitride surfaces for anti-biofouling and bioselective capture

    NARCIS (Netherlands)

    Nguyen, A.T.

    2011-01-01

    Microsieves – microengineered membranes – have been introduced in microfiltration technology as a new generation of inorganic membranes. The thin membranes are made of silicon nitride (SixN4), which gives the membranes outstanding features, such as chemical inertness and high mechanical

  20. Near-field optical microscope using a silicon-nitride probe

    NARCIS (Netherlands)

    van Hulst, N.F.; Moers, M.H.P.; Moers, M.H.P.; Noordman, O.F.J.; Noordman, O.F.J.; Tack, R.G.; Segerink, Franciscus B.; Bölger, B.; Bölger, B.

    1993-01-01

    Operation of an alternative near-field optical microscope is presented. The microscope uses a microfabricated silicon- nitride probe with integrated cantilever, as originally developed for force microscopy. The cantilever allows routine close contact near-field imaging o­n arbitrary surfaces without

  1. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  2. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  3. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Johan W.; Sarajlic, Edin; Tas, Niels Roelof; Jansen, Henricus V.

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using $\\langle$111$\\rangle$ silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom

  4. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  5. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    Science.gov (United States)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  6. Study of the main parameters involved in carbothermal reduction reaction of silica aiming to obtain silicon nitride powder

    International Nuclear Information System (INIS)

    Rocha, J.C. da; Greca, M.C.

    1989-01-01

    The influence of main parameters involved in the method of silicon nitride attainment by carbothermal reduction of silica followed by nitridation were studied in isothermal experiments of fine powder mixtures of silica and graphite in a nitrogen gas flow. The time, temperature, rate C/SiO 2 and flow of nitrogen were varied since they are the main parameters involved in this kind of reaction. The products of reaction were analysed by X-ray diffraction to identify the crystalline phases and as a result was obtained the nucleation of silicon nitride phase. Meanwhile, corroborating prior results, we verified to be difficult the progress of the reaction and the inhibition of formation of silicon carbide phase, the last one being associated to the formation of silicon nitride phase due to thermodynamic matters [pt

  7. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

    Science.gov (United States)

    Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

    2017-02-15

    An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

  8. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  9. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  10. Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

    Science.gov (United States)

    Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

    2015-10-05

    In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

  11. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  12. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    International Nuclear Information System (INIS)

    Bernier, Nicolas; Xhoffer, Chris; Van De Putte, Tom; Galceran, Montserrat; Godet, Stéphane

    2013-01-01

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn 2+ and Mn 3+ are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN) x (SiMn 0.25 N y O z ) 1−x with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn 2+ and Mn 3+ . • Oxygen

  13. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Mutch, Michael J. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lenahan, Patrick M. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2016-08-08

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  14. Laser-assisted turning of components made of silicon-nitride ceramics

    International Nuclear Information System (INIS)

    Klocke, F.; Bausch, S.

    2001-01-01

    The manufacture of high-precision parts made of silicon-nitride ceramic, such as roller bearing rings or valves, currently involves finishing in the form of time and cost intensive grinding operations. This has resulted in demands for the development of more efficient machining techniques and for the subsequent provision of these within a manufacturing environment. A prototype of a precision lathe with an integrated high power diode laser for laser-assisted turning has been developed at the Fraunhofer IPT in close co-operation with industrial partners. When the workpiece is heated continuously by the laser, the resultant localized material softening enables the ceramic to be machined using a defined cutting edge. The application of this technique allows complex silicon nitride ceramic parts with surface qualities of up to R a = 0.3 μm to be produced considerably more flexibly than before, with no requirement for cooling lubricant. (author)

  15. Practical application of silicon nitride ceramics for sliding parts of rotary engine

    International Nuclear Information System (INIS)

    Ueki, M.; Sato, Y.; Fukuda, K.

    1994-01-01

    Research on ceramic substitutes for the apex seals of the rotary engine have been carrying out. The aim of the substitution of apex seals, the development of high strength silicon nitride ceramics, and the application of the ceramic to the apex seals are described. The properties of silicon nitride ceramics used as apex seals in rotary engines for racing cars are presented. The apex seals were recovered from the rotary engines of racing cars in the 1989 and 1990 Le Mans 24-hour Grand Prix races, and the damage of the seals was investigated and analyzed in detail. One problem was the adhesion to the seals of the hardened chromium plating detached from the inside surface of the rotor housing. The adhesion of chromium caused the fine cracking and subsequent chipping of the apex seals. (orig.)

  16. Application of Silicon Nitride (Si3N4 Ceramics in Ball Bearing

    Directory of Open Access Journals (Sweden)

    Wijianto Wijianto

    2016-08-01

    operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear rate, reducing noise level and reduce of using lubricant. The sintering methods are used to produce ball bearing from silicon nitride. Some techniques can be applied to increase ceramics strength which are reduce porosity, reduce grain size, reduce surface flaw and proof stressing. The surface finishing of the ceramic bearing is very important because silicon nitride as a brittle material, its strength is limited to the flaw sizes especially the flaw at the surface.

  17. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

    Science.gov (United States)

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-10-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

  18. Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

    Science.gov (United States)

    Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

    2018-04-01

    In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

  19. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  20. Microencapsulation of silicon nitride particles with yttria and yttria-alumina precursors

    International Nuclear Information System (INIS)

    Garg, A.K.; De Jonghe, L.C.

    1990-01-01

    Procedures are described to deposit uniform layers of yttria and yttria-alumina precursors on fine powders and whiskers of silicon nitride. The coatings were produced by aging at elevated temperatures aqueous systems containing the silicon nitride core particles, yttrium and aluminum nitrates, and urea. Optimum concentrations of the core particles, in relation to the reactants, were established to promote surface deposition of the oxide precursors. Polymeric dispersants were used effectively to prevent agglomeration of the solids during the microencapsulation process. The morphology of the powders was characterized using scanning and transmission electron microscopy. The mechanisms for the formation of the coated layers are discussed. A description is provided that allows qualitative assessment of the experimental factors that determine microencapsulation by a slurry method

  1. Robust Environmental Barrier Coatings for Silicon Nitride, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon based ceramics are the leading candidates for the high temperature structural components of the advanced propulsion engines. For such applications, one key...

  2. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    The characterization techniques indicated ... Scalable synthesis; microwave plasma; chemical synthesis; nanoparticles. 1. Introduction ... used but very few methods are available to produce silicon and titanium ... current (A). (m3/h). 1. Si. 2.1.

  3. Strength evaluation test of pressureless-sintered silicon nitride at room temperature

    Science.gov (United States)

    Matsusue, K.; Takahara, K.; Hashimoto, R.

    1984-01-01

    In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

  4. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  5. Effect of hot isostatic pressing on reaction-bonded silicon nitride

    Science.gov (United States)

    Watson, G. K.; Moore, T. J.; Millard, M. L.

    1984-01-01

    Specimens of nearly theoretical density have been obtained through the isostatic hot pressing of reaction-bonded silicon nitride under 138 MPa of pressure for two hours at 1850, 1950, and 2050 C. An amorphous phase that is introduced by the hot isostatic pressing partly accounts for the fact that while room temperature flexural strength more than doubles, the 1200 C flexural strength increases significantly only after pressing at 2050 C.

  6. Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

    2015-05-01

    We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

  7. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  8. Analysis of the effective thermoelastic properties and stress fields in silicon nitride based on EBSD data

    Czech Academy of Sciences Publication Activity Database

    Othmani, Y.; Böhlke, T.; Lube, T.; Fellmeth, A.; Chlup, Zdeněk; Colonna, F.; Hashibon, A.

    2016-01-01

    Roč. 36, č. 5 (2016), s. 1109-1125 ISSN 0955-2219 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 EU Projects: European Commission(XE) 263476 Institutional support: RVO:68081723 Keywords : Silicon nitride * EBSD data * Hashin-Shtrikman bounds * Finite element analysis Subject RIV: JH - Ceramic s, Fire-Resistant Materials and Glass Impact factor: 3.411, year: 2016

  9. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  10. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Directory of Open Access Journals (Sweden)

    S. Reboh

    2013-10-01

    Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  11. Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, David, E-mail: caballero@unistra.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Martinez, Elena [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain); Bausells, Joan [Centre Nacional de Microelectronica (CNM-IMB), CSIC, Campus UAB, 08193 Bellaterra (Spain); Errachid, Abdelhamid, E-mail: abdelhamid.errachid-el-salhi@univ-lyon1.fr [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); Universite Claude Bernard - Lyon 1, LSA - UMR 5180, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex (France); Samitier, Josep [Nanobioengineering group-IBEC, Barcelona Science Park, C/ Baldiri Reixach 10-12, 08028 Barcelona (Spain); University of Barcelona, Department of Electronics, C/ Marti i Franques 1, 08028 Barcelona (Spain); Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), 50018 Zaragoza (Spain)

    2012-03-30

    Highlights: Black-Right-Pointing-Pointer An impedimetric label-free immunosensor was developed for the specific detection of human serum albumin proteins. Black-Right-Pointing-Pointer Anti-HSA antibodies were covalently immobilized on silicon nitride surfaces using a direct functionalization methodology. Black-Right-Pointing-Pointer Silicon nitride offers multiple advantages compared to other common materials. Black-Right-Pointing-Pointer The proposed sensor has high sensitivity and good selectivity for the detection of HSA proteins. - Abstract: In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si{sub 3}N{sub 4}) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si{sub 3}N{sub 4}-based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO{sub 2}/Si{sub 3}N{sub 4} structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10{sup -13}-10{sup -7} M were detected, showing a sensitivity of 0.128 {Omega} {mu}M{sup -1} and a limit of detection of 10{sup -14} M. The specificity of the sensor was also addressed by studying the

  12. Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

    International Nuclear Information System (INIS)

    Caballero, David; Martinez, Elena; Bausells, Joan; Errachid, Abdelhamid; Samitier, Josep

    2012-01-01

    Highlights: ► An impedimetric label-free immunosensor was developed for the specific detection of human serum albumin proteins. ► Anti-HSA antibodies were covalently immobilized on silicon nitride surfaces using a direct functionalization methodology. ► Silicon nitride offers multiple advantages compared to other common materials. ► The proposed sensor has high sensitivity and good selectivity for the detection of HSA proteins. - Abstract: In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si 3 N 4 ) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si 3 N 4 -based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO 2 /Si 3 N 4 structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10 −13 –10 −7 M were detected, showing a sensitivity of 0.128 Ω μM −1 and a limit of detection of 10 −14 M. The specificity of the sensor was also addressed by studying the interferences with a similar protein, bovine serum albumin. The results obtained show that the antibodies were efficiently immobilized and the proteins

  13. Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests

    International Nuclear Information System (INIS)

    Merle, B.; Goeken, M.

    2011-01-01

    A bulge test setup was used to determine the fracture toughness of amorphous low-pressure chemical vapor deposited (LPCVD) silicon nitride films with various thicknesses in the range 40-108 nm. A crack-like slit was milled in the center of each free-standing film with a focused ion beam, and the membrane was deformed in the bulge test until failure occurred. The fracture toughness K IC was calculated from the pre-crack length and the stress at failure. It is shown that the membrane is in a transition state between pure plane-stress and plane-strain which, however, had a negligible influence on the measurement of the fracture toughness, because of the high brittleness of silicon nitride and its low Young's modulus over yield strength ratio. The fracture toughness K IC was found to be constant at 6.3 ± 0.4 MPa m 1/2 over the whole thickness range studied, which compares well with bulk values. This means that the fracture toughness, like the Young's modulus, is a size-independent quantity for LPCVD silicon nitride. This presumably holds true for all amorphous brittle ceramic materials.

  14. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  15. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  16. Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

    Science.gov (United States)

    Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

    1990-01-01

    The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

  17. Deformation and wear of pyramidal, silicon-nitride AFM tips scanning micrometre-size features in contact mode

    NARCIS (Netherlands)

    Bloo, M.; Haitjema, H.; Pril, W.O.

    1999-01-01

    An experimental study was carried out, in order to investigate the deformation and wear taking place on pyramidal silicon-nitride AFM tips. The study focuses on the contact mode scanning of silicon features of micrometre-size. First the deformation and the mechanisms of wear of the tip during

  18. Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

    2016-08-01

    We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

  19. Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

    KAUST Repository

    Sevilla, Galo T.

    2013-07-09

    Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Flexible and semi-transparent thermoelectric energy harvesters from low cost bulk silicon (100)

    KAUST Repository

    Sevilla, Galo T.; Inayat, Salman Bin; Rojas, Jhonathan Prieto; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2013-01-01

    Flexible and semi-transparent high performance thermoelectric energy harvesters are fabricated on low cost bulk mono-crystalline silicon (100) wafers. The released silicon is only 3.6% as thick as bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. This generic batch processing is a pragmatic way of transforming traditional silicon circuitry for extremely deformable high-performance integrated electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    Science.gov (United States)

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  2. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  3. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    International Nuclear Information System (INIS)

    Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

    2011-01-01

    Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  4. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  5. Formation of porous surface layers in reaction bonded silicon nitride during processing

    Science.gov (United States)

    Shaw, N. J.; Glasgow, T. K.

    1979-01-01

    Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

  6. Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

    Science.gov (United States)

    Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

    2013-04-01

    In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

  7. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  8. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  9. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  10. Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

    International Nuclear Information System (INIS)

    Chen, Chao-Nan; Huang, Jung-Jie

    2013-01-01

    This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

  11. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  12. Graphene as a transparent electrode for amorphous silicon-based solar cells

    International Nuclear Information System (INIS)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-01-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

  13. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Science.gov (United States)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-06-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  14. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  15. Gallium nitride heterostructures on 3D structured silicon.

    Science.gov (United States)

    Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  16. Gallium nitride heterostructures on 3D structured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Soekmen, Uensal; Peiner, Erwin; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], E-mail: s.fuendling@tu-bs.de

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  17. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  18. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-01-01

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  19. The influence of processing conditions on the microstructure and the mechanical properties of reaction sintered silicon nitride

    International Nuclear Information System (INIS)

    Heinrich, J.

    1979-09-01

    The microstructure of reaction sintered silicon nitride (RBSN) was changed in a wide range of varying green density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behaviour, and resistance to thermal shock has been investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of α- and β-Si 3 N 4 . In view of high temperature engineering applications of RBSN possibilities to optimize the material's properties by controlled processing are discussed. (orig.) [de

  20. A SRF niobium cylindrical cavity with a large silicon nitride niobium-coated membrane as one end-wall

    Science.gov (United States)

    Martinez, Luis; Castelli, Alessandro; Pate, Jacob; Thompson, Johnathon; Delmas, William; Sharping, Jay; Chiao, Raymond; Chiao Team; Sharping Team

    The development of large silicon nitride membranes and niobium film deposition techniques motivate new architectures in opto-mechanics and microwave devices that can exploit the extremely high Q's obtainable with superconducting radio frequency (SRF) niobium cavities. We present a X-band SRF cylindrical cavity-membrane system in which one end-wall of the cavity is replaced by a niobium coated centimeter-sized silicon nitride membrane. We report moderately high Q factors above 10 million. Experimental results characterizing the system and potential future applications for such schemes in microwave devices and optomechanics are discussed.

  1. Infrared transparent graphene heater for silicon photonic integrated circuits.

    Science.gov (United States)

    Schall, Daniel; Mohsin, Muhammad; Sagade, Abhay A; Otto, Martin; Chmielak, Bartos; Suckow, Stephan; Giesecke, Anna Lena; Neumaier, Daniel; Kurz, Heinrich

    2016-04-18

    Thermo-optical tuning of the refractive index is one of the pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation of fabrication tolerances, and implementation of photonic operations. Currently, heaters based on metal wires provide the temperature control in the silicon waveguide. The strong interaction of metal and light, however, necessitates a certain gap between the heater and the photonic structure to avoid significant transmission loss. Here we present a graphene heater that overcomes this constraint and enables an energy efficient tuning of the refractive index. We achieve a tuning power as low as 22 mW per free spectral range and fast response time of 3 µs, outperforming metal based waveguide heaters. Simulations support the experimental results and suggest that for graphene heaters the spacing to the silicon can be further reduced yielding the best possible energy efficiency and operation speed.

  2. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

    International Nuclear Information System (INIS)

    Holland, S.E.

    2000-01-01

    The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels

  3. Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

    2015-03-09

    We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

  4. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  5. Determination of impurities in silicon nitride by particle induced x-ray emission analysis

    International Nuclear Information System (INIS)

    Miyagawa, Yoshiko; Saito, Kazuo; Niwa, Hiroaki; Ishizuka, Toshio; Miyagawa, Soji

    1985-01-01

    A method is presented for quantitative particle induced X-ray emission (PIXE) analysis of impurities in the thick samples of silicon nitride. In the analysis of ceramic materials such as silicon nitride, chemical treatments are required to prepare thin enough samples. However, the chemical treatments are undesirable for the PIXE analysis, because another complications are brought about. Our method does not need any chemical treatments and thick samples can be subjected to the measurements. The determination of impurities were made by on-line use of a personal computer in which standard X-ray intensity data were stored. The method and procedures are as follows: After subtracting a buckground spectrum from an observed PIXE spectrum, the resultant peaks are assigned to individual elements. Then, in order to determine the contents of the impurities, the intensity of each peak is compared with a Gaussian curve which is generated from the standard X-ray intensity data. The latter data were determined theoretically. The results were in satisfactory agreement with those obtained by ICP emission spectrometry. (author)

  6. Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

    Science.gov (United States)

    Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

    2005-01-01

    Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

  7. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    Science.gov (United States)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  8. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  9. Solid state MEMS devices on flexible and semi-transparent silicon (100) platform

    KAUST Repository

    Ahmed, Sally; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    We report fabrication of MEMS thermal actuators on flexible and semi-transparent silicon fabric released from bulk silicon (100). We fabricated the devices first and then released the top portion of the silicon (≈ 19 μm) which is flexible and semi-transparent. We also performed chemical mechanical polishing to reuse the remaining wafer. A tested thermal actuator with 3 μm wide 240 μm hot arm and 10 μm wide 185 μm long cold arm deflected by 1.7 μm at 1 V. The fabricated thermal actuators exhibit similar performance before and after bending. We believe the demonstrated process will expand the horizon of flexible electronics into MEMS world devices. © 2014 IEEE.

  10. Critical Role of Diels-Adler Adducts to Realise Stretchable Transparent Electrodes Based on Silver Nanowires and Silicone Elastomer

    Science.gov (United States)

    Heo, Gaeun; Pyo, Kyoung-Hee; Lee, Da Hee; Kim, Youngmin; Kim, Jong-Woong

    2016-05-01

    This paper presents the successful fabrication of a transparent electrode comprising a sandwich structure of silicone/Ag nanowires (AgNWs)/silicone equipped with Diels-Alder (DA) adducts as crosslinkers to realise highly stable stretchability. Because of the reversible DA reaction, the crosslinked silicone successfully bonds with the silicone overcoat, which should completely seal the electrode. Thus, any surrounding liquid cannot leak through the interfaces among the constituents. Furthermore, the nanowires are protected by the silicone cover when they are stressed by mechanical loads such as bending, folding, and stretching. After delicate optimisation of the layered silicone/AgNW/silicone sandwich structure, a stretchable transparent electrode which can withstand 1000 cycles of 50% stretching-releasing with an exceptionally high stability and reversibility was fabricated. This structure can be used as a transparent strain sensor; it possesses a strong piezoresistivity with a gauge factor greater than 11.

  11. Evaluation of silicon nitride as a substrate for culture of PC12 cells: an interfacial model for functional studies in neurons.

    Directory of Open Access Journals (Sweden)

    Johan Jaime Medina Benavente

    Full Text Available Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we characterized their interaction based on cell behavior when seeded on the tested material. The coated surface was first examined in terms of wettability and topography using contact angle measurements and atomic force microscopy and then, conditioned silicon nitride surface was used as the substrate for the study of PC12 cell culture properties. We found that coating silicon nitride with poly-L-lysine increased surface hydrophilicity and that exposing this coated surface to an extracellular aqueous environment gradually decreased its roughness. When PC12 cells were cultured on a coated silicon nitride surface, adhesion and spreading were facilitated, and the cells showed enhanced morphological differentiation compared to those cultured on a plastic culture dish. A bromodeoxyuridine assay demonstrated that, on the coated silicon nitride surface, higher proportions of cells left the cell cycle, remained in a quiescent state and had longer survival times. Therefore, our study of the interaction of the silicon nitride surface with PC12 cells provides important information for the production of devices that need to have optimal cell culture-supporting properties in order to be used in the study of neuronal functions.

  12. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-01-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time

  13. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  14. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2015-10-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  15. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    Science.gov (United States)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  16. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  17. Steel bonded dense silicon nitride compositions and method for their fabrication

    Science.gov (United States)

    Landingham, Richard L.; Shell, Thomas E.

    1987-01-01

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  18. Observation of ultraslow stress release in silicon nitride films on CaF2

    International Nuclear Information System (INIS)

    Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

    2015-01-01

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF 2 crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN x film on (111) CaF 2 is larger than that of SiN x film with the same thickness on (100) CaF 2 . The velocities of SiN x film on both (100) and (111) CaF 2 increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy

  19. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  20. Observation of ultraslow stress release in silicon nitride films on CaF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Tianyi [School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China); Deen, M. Jamal, E-mail: jamal@mcmaster.ca [Department of Electrical and Computer Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1 (Canada); Xu, Changqing; Fang, Qiyin [Department of Engineering Physics, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada); Selvaganapathy, P. Ravi [Department of Mechanical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada); Zhang, Haiying [Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China)

    2015-07-15

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF{sub 2} crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN{sub x} film on (111) CaF{sub 2} is larger than that of SiN{sub x} film with the same thickness on (100) CaF{sub 2}. The velocities of SiN{sub x} film on both (100) and (111) CaF{sub 2} increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy.

  1. Young's modulus and fracture toughness of silicon nitride ceramics at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Rouxel, T. [Rennes Univ. (France). Lab. de Recherche en Mecanique Applicee

    2002-07-01

    The temperature dependencies of Young's modulus (E) and fracture toughness (K{sub 1c}) of several silicon nitride-based monolithic and composite materials, are reviewed. A transition range is observed between 1130 and 1180 C on the E(T) curves, which is systematically 150 to 200 C above the T{sub g} of oxynitride glasses of composition close to that of the intergranular glassy pockets. It is thus supposed that this transition reflects the behaviour of the interfacial glassy films. The higher the glassy phase content, the higher is the temperature sensitivity. The presence of SiC particles greatly attenuates the sensitivity. Thus, Young's modulus decreases more slowly with temperature and fracture toughness changes little up to 1300 C. The K{sub 1c} (T) curves exhibit four different stages which are discussed and interpreted on the basis of a theoretical model. (orig.)

  2. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

    International Nuclear Information System (INIS)

    Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua

    2009-01-01

    The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF.

  3. Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

    International Nuclear Information System (INIS)

    Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

    2017-01-01

    Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

  4. Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

    Science.gov (United States)

    Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

    2015-08-10

    We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

  5. Effect of loading rate on dynamic fracture of reaction bonded silicon nitride

    Science.gov (United States)

    Liaw, B. M.; Kobayashi, A. S.; Emery, A. F.

    1986-01-01

    Wedge-loaded, modified tapered double cantilever beam (WL-MTDCB) specimens under impact loading were used to determine the room temperature dynamic fracture response of reaction bonded silicon nitride (RBSN). The crack extension history, with the exception of the terminal phase, was similar to that obtained under static loading. Like its static counterpart, a distinct crack acceleration phase, which was not observed in dynamic fracture of steel and brittle polymers, was noted. Unlike its static counterpart, the crack continued to propagate at nearly its terminal velocity under a low dynamic stress intensity factor during the terminal phase of crack propagation. These and previously obtained results for glass and RBSN show that dynamic crack arrest under a positive dynamic stress intensity factor is unlikely in static and impact loaded structural ceramics.

  6. Pressure bonding molybdenum alloy (TZM) to reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Huffsmith, S.A.; Landingham, R.L.

    1978-01-01

    Topping cycles could boost the energy efficiencies of a variety of systems by using what is now waste heat. One such topping cycle uses a ceramic helical expander and would require that a reaction-bonded silicon nitride (RBSN) rotor be bonded to a shaft of TZM (Mo-0.5 wt % Ti-0.08 wt % Zr). Coupon studies show that TZM can be bonded to RBSN at 1300 0 C and 69 MPa if there is an interlayer of MoSi 2 . A layer of finely ground (10 μm) MoSi 2 facilitates bond formation and provides a thicker bond interface. The hardness and grain structure of the TZM and RBSN were not affected by the temperature and pressure required to bond the coupons

  7. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  8. Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

    Science.gov (United States)

    Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

    2018-04-01

    We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

  9. Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

    Science.gov (United States)

    Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

    2015-06-01

    Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

  10. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

  11. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hee-Dong, E-mail: khd0708@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Yun, Min Ju [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Kim, Kyeong Heon [School of Electrical Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 163-701 (Korea, Republic of); Kim, Sungho, E-mail: sungho85.kim@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

    2016-08-05

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN{sub x}) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10{sup 3} in positive bias region and 5 × 10{sup 5} in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10{sup 4} s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10{sup 2} at 85 °C to ∼10{sup 3} at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN{sub x} films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN{sub x}-based RRAM cells have investigated. • Oxygen doping concentration within ZrN{sub x} is optimized using working pressure of sputter. • Long retention time were observed.

  12. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho

    2016-01-01

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10"3 in positive bias region and 5 × 10"5 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10"4 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10"2 at 85 °C to ∼10"3 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN_x-based RRAM cells have investigated. • Oxygen doping concentration within ZrN_x is optimized using working pressure of sputter. • Long retention time were observed.

  13. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  14. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  15. Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Westerheide, R.; Woetting, G.; Schmitz, H.W.

    1998-07-01

    The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

  16. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  17. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

    2015-04-30

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

  18. Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

    International Nuclear Information System (INIS)

    Ding Yanfang; Zhu Ziqiang; Zhu Ming; Lin Chenglu

    2006-01-01

    Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times higher than that of SiO 2 (320 W·m -1 ·K -1 versus 1.4 W·m -1 ·K -l ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AIN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions. (authors)

  19. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...

  20. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  1. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  2. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  3. WEAR PERFORMANCE OPTIMIZATION OF SILICON NITRIDE USING GENETIC AND SIMULATED ANNEALING ALGORITHM

    Directory of Open Access Journals (Sweden)

    SACHIN GHALME

    2017-12-01

    Full Text Available Replacing damaged joint with the suitable alternative material is a prime requirement in a patient who has arthritis. Generation of wear particles in the artificial joint during action or movement is a serious issue and leads to aseptic loosening of joint. Research in the field of bio-tribology is trying to evaluate materials with minimum wear volume loss so as to extend joint life. Silicon nitride (Si3N4 is non-oxide ceramic suggested as a new alternative for hip/knee joint replacement. Hexagonal Boron Nitride (hBN is recommended as a solid additive lubricant to improve the wear performance of Si3N4 . In this paper, an attempt has been made to evaluate the optimum combination of load and % volume of hBN in Si3N4 to minimize wear volume loss (WVL. The experiments were conducted according to Design of Experiments (DoE – Taguchi method and a mathematical model is developed. Further, this model is processed with Genetic Algorithm (GA and Simulated Annealing (SA to find out the optimum percentage of hBN in Si3N4 to minimize wear volume loss against Alumina (Al2O3 counterface. Taguchi method presents 15 N load and 8% volume of hBN to minimize WVL of Si3N4 . While GA and SA optimization offer 11.08 N load, 12.115% volume of hBN and 11.0789 N load, 12.128% volume of hBN respectively to minimize WVL in Si3N4. .

  4. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  5. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Science.gov (United States)

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  6. Graphene as transparent and current spreading electrode in silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Behura, Sanjay K., E-mail: sanjaybehura@gmail.com; Nayak, Sasmita; Jani, Omkar [Solar Energy Research Wing, Gujarat Energy Research and Management Institute - Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat (India); Mahala, Pramila [School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat (India)

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  7. Graphene as transparent and current spreading electrode in silicon solar cell

    Directory of Open Access Journals (Sweden)

    Sanjay K. Behura

    2014-11-01

    Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  8. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Science.gov (United States)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  9. Modification of silicon nitride surfaces with GOPES and APTES for antibody immobilization: computational and experimental studies

    International Nuclear Information System (INIS)

    To, Thien Dien; Nguyen, Anh Tuan; Phan, Khoa Nhat Thanh; Truong, An Thu Thi; Doan, Tin Chanh Duc; Dang, Chien Mau

    2015-01-01

    Chemical modification of silicon nitride (SiN) surfaces by silanization has been widely studied especially with 3-(aminopropyl)triethoxysilane (APTES) and 3-(glycidyloxypropyl) dimethylethoxysilane (GOPES). However few reports performed the experimental and computational studies together. In this study, surface modification of SiN surfaces with GOPES and APTES covalently bound with glutaraldehyde (GTA) was investigated for antibody immobilization. The monoclonal anti-cytokeratin-FITC (MACF) antibody was immobilized on the modified SiN surfaces. The modified surfaces were characterized by water contact angle measurements, atomic force microscopy and fluorescence microscopy. The FITC-fluorescent label indicated the existence of MACF antibody on the SiN surfaces and the efficiency of the silanization reaction. Absorption of APTES and GOPES on the oxidized SiN surfaces was computationally modeled and calculated by Materials Studio software. The computational and experimental results showed that modification of the SiN surfaces with APTES and GTA was more effective than the modification with GOPES. (paper)

  10. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Science.gov (United States)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  11. Mid-infrared frequency comb via coherent dispersive wave generation in silicon nitride nanophotonic waveguides

    Science.gov (United States)

    Guo, Hairun; Herkommer, Clemens; Billat, Adrien; Grassani, Davide; Zhang, Chuankun; Pfeiffer, Martin H. P.; Weng, Wenle; Brès, Camille-Sophie; Kippenberg, Tobias J.

    2018-06-01

    Mid-infrared optical frequency combs are of significant interest for molecular spectroscopy due to the large absorption of molecular vibrational modes on the one hand, and the ability to implement superior comb-based spectroscopic modalities with increased speed, sensitivity and precision on the other hand. Here, we demonstrate a simple, yet effective, method for the direct generation of mid-infrared optical frequency combs in the region from 2.5 to 4.0 μm (that is, 2,500-4,000 cm-1), covering a large fraction of the functional group region, from a conventional and compact erbium-fibre-based femtosecond laser in the telecommunication band (that is, 1.55 μm). The wavelength conversion is based on dispersive wave generation within the supercontinuum process in an unprecedented large-cross-section silicon nitride (Si3N4) waveguide with the dispersion lithographically engineered. The long-wavelength dispersive wave can perform as a mid-infrared frequency comb, whose coherence is demonstrated via optical heterodyne measurements. Such an approach can be considered as an alternative option to mid-infrared frequency comb generation. Moreover, it has the potential to realize compact dual-comb spectrometers. The generated combs also have a fine teeth-spacing, making them suitable for gas-phase analysis.

  12. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mikšová, R., E-mail: miksova@ujf.cas.cz [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Hnatowicz, V. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Macková, A.; Malinský, P. [Nuclear Physics Institute of the Academy of Science of the Czech Republic v.v. i., 250 68 Rez (Czech Republic); Department of Physics, Faculty of Science, J. E. Purkinje University, Ceske Mladeze 8, 400 96 Usti nad Labem (Czech Republic); Slepička, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2015-07-01

    The stopping power and energy straggling of {sup 12}C{sup 3+} and {sup 16}O{sup 3+} ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C{sup 3+} ion energy losses comparing to O{sup 3+} ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%.

  13. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Science.gov (United States)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  14. Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-03-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. (c) 2010 Elsevier Inc. All rights reserved.

  15. Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Idrobo, Juan C., E-mail: idrobojc@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Walkosz, Weronika [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Klie, Robert F.; Oeguet, Serdar [Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States)

    2012-12-15

    In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si{sub 3}N{sub 4}/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si{sub 3}N{sub 4}/SiO{sub 2} interface and in bulk Si{sub 3}N{sub 4} using aberration-corrected scanning transmission electron microscopy. -- Highlights: Black-Right-Pointing-Pointer Revealing the atomic structure of the {alpha}-Si{sub 3}N{sub 4}/SiO{sub 2} interface. Black-Right-Pointing-Pointer Identification and lattice location of oxygen impurities in bulk {alpha}-Si{sub 3}N{sub 4}. Black-Right-Pointing-Pointer Short range ordering of nitrogen and oxygen at the {beta}-Si{sub 3}N{sub 4}/SiO{sub 2} interface.

  16. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    International Nuclear Information System (INIS)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

    2011-01-01

    Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  17. EXPERIMENTAL INVESTIGATION ON TRIBOLOGICAL CHARACTERISTICS OF SILICON NITRIDE REINFORCED ALUMINIUM METAL MATRIX COMPOSITES

    Directory of Open Access Journals (Sweden)

    D. BHUVANESH

    2017-05-01

    Full Text Available Aluminium alloy (LM25 reinforced with silicon nitride was fabricated by liquid metallurgy route. The fabricated composite was investigated for dry sliding wear behaviour by conducting experiments using pin-on-disc tribometer. Set of experiments were planned using Taguchi’s technique and data analysis was carried out using L27 orthogonal array. Analysis of Variance (ANOVA technique was used to determine the significance of parameter with respect to wear rate. Signal-to-Noise ratio was employed to detect the most and least influential parameter as well as their level of influence. ‘Smaller the wear’ characteristic was chosen for the analysis of dry sliding wear. Results implied that, the load has the primary effect on the wear succeeded by the effect of sliding velocity and sliding distance. Scanning Electronic Microscopic studies were carried out on worn surfaces to understand the wear mechanism.Tribological results indicated that LM25 aluminium alloy could be better utilized as a material for piston, rotor and bearings for long life in low speed applications.

  18. The stopping power and energy straggling of heavy ions in silicon nitride and polypropylene

    International Nuclear Information System (INIS)

    Mikšová, R.; Hnatowicz, V.; Macková, A.; Malinský, P.; Slepička, P.

    2015-01-01

    The stopping power and energy straggling of 12 C 3+ and 16 O 3+ ions with energies between 4.5 and 7.8 MeV in a 0.166-μm-thin silicon nitride and in 4-μm-thin polypropylene foils were measured by means of an indirect transmission method using a half-covered PIPS detector. Ions scattered from a thin gold layer under a scattering angle of 150° were used. The energy spectra of back-scattered and decelerated ions were registered and evaluated simultaneously. The measured stopping powers were compared with the theoretical predictions simulated by SRIM-2008 and MSTAR codes. SRIM prediction of energy stopping is reasonably close to the experimentally obtained values comparing to MSTAR values. Better agreement between experimental and predicted data was observed for C 3+ ion energy losses comparing to O 3+ ions. The experimental data from Paul’s database and our previous experimental data were also discussed. The obtained experimental energy-straggling data were compared to those calculated by using Bohr’s, Yang’s models etc. The predictions by Yang are in good agreement with our experiment within a frame of uncertainty of 25%

  19. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    Science.gov (United States)

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-09

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  20. Structural impact on the eigenenergy renormalization for carbon and silicon allotropes and boron nitride polymorphs

    Science.gov (United States)

    Tutchton, Roxanne; Marchbanks, Christopher; Wu, Zhigang

    2018-05-01

    The phonon-induced renormalization of electronic band structures is investigated through first-principles calculations based on the density functional perturbation theory for nine materials with various crystal symmetries. Our results demonstrate that the magnitude of the zero-point renormalization (ZPR) of the electronic band structure is dependent on both crystal structure and material composition. We have performed analysis of the electron-phonon-coupling-induced renormalization for two silicon (Si) allotropes, three carbon (C) allotropes, and four boron nitride (BN) polymorphs. Phonon dispersions of each material were computed, and our analysis indicates that materials with optical phonons at higher maximum frequencies, such as graphite and hexagonal BN, have larger absolute ZPRs, with the exception of graphene, which has a considerably smaller ZPR despite having phonon frequencies in the same range as graphite. Depending on the structure and material, renormalizations can be comparable to the GW many-body corrections to Kohn-Sham eigenenergies and, thus, need to be considered in electronic structure calculations. The temperature dependence of the renormalizations is also considered, and in all materials, the eigenenergy renormalization at the band gap and around the Fermi level increases with increasing temperature.

  1. Characteristics of laser assisted machining for silicon nitride ceramic according to machining parameters

    International Nuclear Information System (INIS)

    Kim, Jong Do; Lee, Su Jin; Suh, Jeong

    2011-01-01

    This paper describes the Laser Assisted Machining (LAM) that cuts and removes softened parts by locally heating the ceramic with laser. Silicon nitride ceramics can be machined with general machining tools as well, because YSiAlON, which was made up ceramics, is soften at about 1,000 .deg. C. In particular, the laser, which concentrates on highly dense energy, can locally heat materials and very effectively control the temperature of the heated part of specimen. Therefore, this paper intends to propose an efficient machining method of ceramic by deducing the machining governing factors of laser assisted machining and understanding its mechanism. While laser power is the machining factor that controls the temperature, the CBN cutting tool could cut the material more easily as the material gets deteriorated from the temperature increase by increasing the laser power, but excessive oxidation can negatively affect the quality of the material surface after machining. As the feed rate and cutting depth increase, the cutting force increases and tool lifespan decreases, but surface oxidation also decreases. In this experiment, the material can be cut to 3 mm of cutting depth. And based on the results of the experiment, the laser assisted machining mechanism is clarified

  2. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  3. Transparency

    NARCIS (Netherlands)

    Gupta, A.; Mason, M.

    2015-01-01

    Transparency, as information disclosure, is becoming a widely accepted norm and set of practices in global climate governance. Disclosure of climate-related information is mainly seen as a way to monitor and/or reward various actors’ climate mitigation actions, thereby contributing, at least in

  4. Transparency

    Science.gov (United States)

    LaFee, Scott

    2009-01-01

    Citizens now expect access to information, particularly from public institutions like local school districts. They demand input and accountability. Cultural and technological changes, such as the Internet, make it possible for districts to comply. Yet transparency--the easily seen and understood actions of a school district and the thinking behind…

  5. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  7. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

    International Nuclear Information System (INIS)

    Canteli Perez-Caballero, D.

    2015-01-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  8. Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

    Directory of Open Access Journals (Sweden)

    Mohamed Sabry Mohamed

    2017-03-01

    Full Text Available We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG and third harmonic generation (THG in suspended gallium nitride slab photonic crystal (PhC cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10−3 W−1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  9. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    Science.gov (United States)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  10. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  11. First-principles study of the effects of halogen dopants on the properties of intergranular films in silicon nitride ceramics

    International Nuclear Information System (INIS)

    Painter, Gayle S.; Becher, Paul F.; Kleebe, H.-J.; Pezzotti, G.

    2002-01-01

    The nanoscale intergranular films that form in the sintering of ceramics often occur as adherent glassy phases separating the crystalline grains in the ceramic. Consequently, the properties of these films are often equal in importance to those of the constituent grains in determining the ceramic's properties. The measured characteristics of the silica-rich phase separating the crystalline grains in Si 3 N 4 and many other ceramics are so reproducible that SiO 2 has become a model system for studies of intergranular films (IGF's). Recently, the influence of fluorine and chlorine dopants in SiO 2 -rich IGF's in silicon nitride was precisely documented by experiment. Along with the expected similarities between the halogens, some dramatically contrasting effects were found. But the atomic-scale mechanisms distinguishing the effects F and Cl on IGF behavior have not been well understood. First-principles density functional calculations reported here provide a quantum-level description of how these dopant-host interactions affect the properties of IGF's, with specific modeling of F and Cl in the silica-rich IGF in silicon nitride. Calculations were carried out for the energetics, structural changes, and forces on the atoms making up a model cluster fragment of an SiO 2 intergranular film segment in silicon nitride with and without dopants. Results show that both anions participate in the breaking of bonds within the IGF, directly reducing the viscosity of the SiO 2 -rich film and promoting decohesion. Observed differences in the way fluorine and chlorine affect IGF behavior become understandable in terms of the relative stabilities of the halogens as they interact with Si atoms that have lost one if their oxygen bridges

  12. Prototype of a silicon nitride ceramic-based miniplate osteofixation system for the midface.

    Science.gov (United States)

    Neumann, Andreas; Unkel, Claus; Werry, Christoph; Herborn, Christoh U; Maier, Horst R; Ragoss, Christian; Jahnke, Klaus

    2006-06-01

    The favorable properties of silicon nitride (Si3N4) ceramics, such as high mean strength level and fracture toughness, suggest biomedical use as an implant material. Minor reservations about the biocompatibility of Si3N4 ceramics were cleared up by previous in vitro and in vivo investigations. A Si3N4 prototype minifixation system was manufactured and implanted for osteosynthesis of artificial frontal bone defects in 3 minipigs. After 3 months, histological sections, computed tomography (CT) scans, and magnetic resonance imaging (MRI) scans were obtained. Finite element modeling (FEM) was used to simulate stresses and strains on Si3N4 miniplates and screws to calculate survival probabilities. Si3N4 miniplates and screws showed satisfying intraoperative workability. There was no implant loss, displacement, or fracture. Bone healing was complete in all animals. The formation of new bone was observed in direct contact to the implants. The implants showed no artifacts on CT and MRI scanning. FEM simulation confirmed the mechanical reliability of the screws, whereas simulated plate geometries regarding pullout forces at maximum load showed limited safety in a bending situation. Si3N4 ceramics show a good biocompatibility outcome both in vitro and in vivo. In ENT surgery, this ceramic may serve as a biomaterial for osteosynthesis (eg, of the midface including reconstruction the floor of the orbit and the skull base). To our knowledge, this is the first introduction of a ceramic-based miniplate-osteofixation system. Advantages compared with titanium are no risk of implantation to bone with mucosal attachment, no need for explantation, and no interference with radiologic imaging. Disadvantages include the impossibility of individual bending of the miniplates.

  13. Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

    International Nuclear Information System (INIS)

    Williams, J.M.; Miner, J.

    1998-01-01

    The present report summarizes technical results of CRADA No. ORNL 92-128 with the Pratt and Whitney Division of United Technologies Corporation. The stated purpose of the program was to assess the 3effect of ion implantation on the rolling contact performance of engineering silicon nitride bearings, to determine by post-test analyses of the bearings the reasons for improved or reduced performance and the mechanisms of failure, if applicable, and to relate the overall results to basic property changes including but not limited to swelling, hardness, modulus, micromechanical properties, and surface morphology. Forty-two control samples were tested to an intended runout period of 60 h. It was possible to supply only six balls for ion implantation, but an extended test period goal of 150 h was used. The balls were implanted with C-ions at 150 keV to a fluence of 1.1 x 10 17 /cm 2 . The collection of samples had pre-existing defects called C-cracks in the surfaces. As a result, seven of the control samples had severe spalls before reaching the goal of 60 h for an unacceptable failure rate of 0.003/sample-h. None of the ion-implanted samples experienced engineering failure in 150 h of testing. Analytical techniques have been used to characterize ion implantation results, to characterize wear tracks, and to characterize microstructure and impurity content. In possible relation to C-cracks. It is encouraging that ion implantation can mitigate the C-crack failure mode. However, the practical implications are compromised by the fact that bearings with C-cracks would, in no case, be acceptable in engineering practice, as this type of defect was not anticipated when the program was designed. The most important reason for the use of ceramic bearings is energy efficiency

  14. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Energy Technology Data Exchange (ETDEWEB)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T [Research Unit of Advanced Ceramic, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok (Thailand); Padipatvuthikul, P, E-mail: raayaa_chula@hotmail.com [Faculty of Dentistry, Srinakharinwirot University, Bangkok (Thailand)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si{sub 3}N{sub 4} ceramic as a dental core material. The white Si{sub 3}N{sub 4} was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si{sub 3}N{sub 4} ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si{sub 3}N{sub 4} specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y{sub 2}O{sub 3} - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si{sub 3}N{sub 4} specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10{sup -6} deg. C{sup -1}, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  15. Thermal Response of Cooled Silicon Nitride Plate Due to Thermal Conductivity Effects Analyzed

    Science.gov (United States)

    Baaklini, George Y.; Abdul-Aziz, Ali; Bhatt, Ramakrishna

    2003-01-01

    Lightweight, strong, tough high-temperature materials are required to complement efficiency improvements for next-generation gas turbine engines that can operate with minimum cooling. Because of their low density, high-temperature strength, and high thermal conductivity, ceramics are being investigated as materials to replace the nickelbase superalloys that are currently used for engine hot-section components. Ceramic structures can withstand higher operating temperatures and a harsh combustion environment. In addition, their low densities relative to metals help reduce component mass (ref. 1). To complement the effectiveness of the ceramics and their applicability for turbine engine applications, a parametric study using the finite element method is being carried out. The NASA Glenn Research Center remains very active in conducting and supporting a variety of research activities related to ceramic matrix composites through both experimental and analytical efforts (ref. 1). The objectives of this work are to develop manufacturing technology, develop a thermal and environmental barrier coating (TBC/EBC), develop an analytical modeling capability to predict thermomechanical stresses, and perform a minimal burner rig test on silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Moreover, we intend to generate a detailed database of the material s property characteristics and their effects on structural response. We expect to offer a wide range of data since the modeling will account for other variables, such as cooling channel geometry and spacing. Comprehensive analyses have begun on a plate specimen with Si3N4 cooling holes.

  16. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  17. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  18. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  19. Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

    Science.gov (United States)

    Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

    2017-04-03

    We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

  20. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  1. Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

    International Nuclear Information System (INIS)

    Ghaderi, Mohammadamir; Wolffenbuttel, Reinoud F.

    2016-01-01

    MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented. (paper)

  2. Novel epoxy-silicone thermolytic transparent packaging adhesives chemical modified by ZnO nanowires for HB LEDs

    International Nuclear Information System (INIS)

    He Ying; Wang Junan; Pei Changlong; Song Jizhong; Zhu Di; Chen Jie

    2010-01-01

    A novel high transparent thermolytic epoxy-silicone for high-brightness light-emitting diode (HB-LED) is introduced, which was synthesized by polymerization using silicone matrix via diglycidyl ether bisphenol-A epoxy resin (DGEBA) as reinforcing agent, and filling ZnO nanowires to modify thermal conductivity and control refractive index of the hybrid material. The interactions of ZnO nanowires with polymers are mediated by the ligands attached to the nanoparticles. Thus, the ligands markedly influence the properties of ZnO nanowires/epoxy-silicone composites. The refractive indices of the prepared hybrid adhesives can be tuned by the ZnO nanowires from 1.4711 to 1.5605. Light transmittance can be increased by 20% from 80 to 95%. The thermal conductivity of the transparent packaging adhesives is 0.89-0.90 W/mK.

  3. Assessments of Mechanical and Life Limiting Properties of Two Candidate Silicon Nitrides for Stirling Convertor Heater Head Applications

    Science.gov (United States)

    Choi, Sung R.; Krause, David L.

    2006-01-01

    NASA Glenn Research Center is developing advanced technology for Stirling convertors with a target of significantly improving the specific power and efficiency of the convertor and overall generator for Mars rovers and deep space missions. One specific approach to the target has been recognized as the use of appropriate high-temperature materials. As a series of ceramic material approaches in Advanced Stirling Convertor Development Program in fiscal year 2005, two commercial, structural silicon nitrides AS800 (Honeywell, Torrence, California) and SN282 (Kyocera, Vancouver, Washington) were selected and their mechanical and life limiting properties were characterized at 1050 C in air. AS800 exhibited both strength and Weibull modulus greater than SN282. A life limiting phenomenon was apparent in AS800 with a low slow crack growth parameter n = 15; whereas, a much increased resistance to slow crack growth was found in SN282 with n greater than 100. Difference in elastic modulus and thermal conductivity was negligible up to 1200 C between the two silicon nitrides. The same was true for the coefficient of thermal expansion up to 1400 C.

  4. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  5. Analysis of the properties of silicon nitride based ceramic (Si_3N_4) cutting tool using different addictive

    International Nuclear Information System (INIS)

    Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto; Silva, Oliverio Macedo Moreira

    2013-01-01

    The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si_3N_4) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si_3N_4) using different additives such as Y_2O_3, CeO_2, Al_2O_3 , and CTR_2O_3 in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m"1"/"2. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)

  6. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo; Aydin, Erkan; Xu, Hang; Kang, Jingxuan; Hedhili, Mohamed N.; Liu, Wenzhu; Wan, Yimao; Peng, Jun; Samundsett, Christian; Cuevas, Andres; De Wolf, Stefaan

    2018-01-01

    novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties

  7. The combined effects of Fe and H2 on the nitridation of silicon

    Science.gov (United States)

    Shaw, N. J.

    1982-01-01

    In view of the support offered by previous work for the suggestion that Fe may affect alpha-Si3N4 formation and microstructural development, a two-part study was conducted to differentiate the effects of H2 and Fe in, first, the nitridation of pure and of Fe-containing powder in N2 and N2-4% H2, and then the nitridation of (1 1 1) Si single crystal wafers with and without Fe powder on the surface. The degree of nitridation is most strongly affected by H2 at 1200 C, but by Fe at 1375 C, where Fe-containing samples in either atmosphere were almost completely nitrided. While neither H2 nor Fe alone changed the ratio of alpha-Si3N4 to beta-Si3N4, the combination of H2 and Fe increased it at both temperatures.

  8. Structure, phonons and related properties in zinc-IV-nitride (IV = silicon, germanium, tin), scandium nitride, and rare-earth nitrides

    Science.gov (United States)

    Paudel, Tula R.

    This thesis presents a study of the phonons and related properties in two sets of nitride compounds, whose properties are until now relatively poorly known. The Zn-IV-N2 group of compounds with the group IV elements Si, Ge and Sn, form a series analogous to the well known III-N nitride series with group III element Al, Ga, In. Structurally, they can be derived by doubling the period of III-V compounds in the plane in two directions and replacing the group-III elements with Zn and a group-IV element in a particular ordered pattern. Even though they are similar to the well-known III-V nitride compounds, the study of the properties of these materials is in its early stages. The phonons in these materials and their relation to the phonons in the corresponding group-III nitrides are of fundamental interest. They are also of practical interest because the phonon related spectra such as infrared absorption and Raman spectroscopy are sensitive to the structural quality of the material and can thus be used to quantify the degree of crystalline perfection of real samples. First-principles calculations of the phonons and related ground state properties of these compounds were carried out using Density Functional Perturbation Theory (DFPT) with the Local Density Approximation (LDA) for exchange and correlation and using a pseudopotential plane wave implementation which was developed by several authors over the last decades. The main focus of our study is on the phonons at the center of the Brillouin zone because the latter are most directly related to commonly used spectroscopies to probe the vibrations in a solid: infrared reflectivity and Raman spectroscopy. For a semiconducting or insulating compound, a splitting occurs between transverse and longitudinal phonons at the Gamma-point because of the long-range nature of electrostatic forces. The concepts required to handle this problem are reviewed. Our discussion emphasizes how the various quantities required are related to

  9. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  10. Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

    Science.gov (United States)

    Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

    2018-01-01

    Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

  11. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    International Nuclear Information System (INIS)

    Volpi, F.; Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

    2014-01-01

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm 3 , respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly

  12. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  13. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; Bowring, Andrea R.; Unger, Eva L.; Nguyen, William H.; Burschka, Julian; Pellet, Norman; Lee, Jungwoo Z.; Grä tzel, Michael; Noufi, Rommel; Buonassisi, Tonio; Salleo, Alberto; McGehee, Michael D.

    2015-01-01

    solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS

  14. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  15. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  16. The novel silicon-containing epoxy/PEPA phosphate flame retardant for transparent intumescent fire resistant coating

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Yanchao [School of Materials Science and Engineering, Tongji University, 4800 Cao' an Road, Shanghai 201804 (China); Wang, Guojian, E-mail: wanggj@tongji.edu.cn [School of Materials Science and Engineering, Tongji University, 4800 Cao' an Road, Shanghai 201804 (China); Key Laboratory of Advanced Civil Engineering Materials, Ministry of Education, 4800 Cao' an Road, Shanghai 201804 (China)

    2016-11-01

    Highlights: • The novel halogen-free flame retardant containing silicon and caged bicyclic phosphate was synthesized. • A novel transparent intumescent fire resistant coating was developed by the P-Si synergistic flame retardant and melamine formaldehyde resin. • Excellent fire protection of the transparent intumescent fire resistant coating. • The P-Si synergistic flame retardant could improve the thermo-oxidation resistance of transparent fire resistant coating. - Abstract: A series of novel silicon-containing epoxy/PEPA phosphate flame retardants (EPPSi) were synthesized by polyphosphoric acid (PPA), caged bicyclic phosphate 1-oxo-4-hydroxymethyl-2,6,7-trioxa-L-phosphabicyclo [2.2.2] octane (PEPA), and different ratios of silicon-containing epoxy 1,1,3,3-tetramethyl-1,3-bis(3-(oxiran-2-ylmethoxy)propyl)disiloxane (TMSEP) to 1,4-butanediol diglycidyl ether (BDE). The chemical structure of EPPSi was confirmed by Fourier transform infrared spectroscopy (FTIR) and {sup 1}H nuclear magnetic resonance spectroscopy ({sup 1}H NMR). Afterwards, the transparent intumescent fire resistant coatings were prepared by mixing EPPSi and melamine formaldehyde resin. The influence of silicon on the fire protection of coatings was intensively investigated by fire protection test, intumescence ratio, scanning electron microscope (SEM), compressive strength test, X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA) and real-time FTIR. It was found that the fire resistant coatings obtained the best fire protection when the ratio of TMESP/BDE was 20/100, while excessive TMSEP made the fire protection of coatings deceased sharply. The intumescence ratio, compressive strength test and SEM result showed that a synergistic effect existed between phosphorus and silicon, which improved the foam structure and compressive strength of the char layer significantly. XPS result proved the out-migration effect of silicon. The high concentration silicon on surface played

  17. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  18. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  19. Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

    Science.gov (United States)

    Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

    2013-05-06

    Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

  20. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  1. The synthesis of a high quality, low cost silicon nitride powder by the carbothermal reduction of silica

    International Nuclear Information System (INIS)

    Cochran, G.A.; Conner, C.L.; Eisman, G.A.; Weimer, A.W.; Carroll, D.F.; Dunmead, S.D.; Hwang, C.J.

    1994-01-01

    The development and emergence of silicon nitride in the marketplace depends on the availability of a high quality, low cost powder which meets or exceeds the requirements for the customer's part application. The Dow Chemical Company, funded by the United States Department of Energy Oak Ridge National Laboratory, is engaged in developing a process which will economically synthesize commercial quantities of such a high quality powder. The Dow Chemical Company's approach is based on the carbothermal reduction of silica and has been shown to produce a sub-micron, equi-axed powder with high alpha content (> 95%), low oxygen (< 2%), and minimal carbon and impurities. This paper will review The Dow Chemical Company program and present preliminary results of the synthesis and powder processing efforts. (orig.)

  2. A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures.

    Science.gov (United States)

    Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

    2016-06-25

    In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).

  3. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  4. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  5. High-purity production of ultrathin boron nitride nanosheets via shock chilling and their enhanced mechanical performance and transparency in nanocomposite hydrogels

    Science.gov (United States)

    Sun, Zemin; Lin, Liu; Yuan, Mengwei; Li, Huifeng; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2018-05-01

    A simple, highly efficient, and eco-friendly method is prepared to divide bulk boron nitride (BN) into boron nitride nanosheets (BNNSs). Due to the anisotropy of the hexagonal BN expansion coefficient, bulk BN is exfoliated utilizing the rapid and tremendous change in temperature, the extreme gasification of water, and ice thermal expansion pressure under freeze drying. The thickness of most of the BNNSs was less than ∼3 nm with a yield of 12–16 wt%. The as-obtained BNNS/polyacrylamide (PAAm) composite hydrogels exhibited outstanding mechanical properties. The tensile strength is fives times the bulk of the BN/PAAm composite hydrogels and the elongations are more than nine-fold the bulk of the BN/PAAm composite hydrogels. The BNNS/PAAm nanocomposite hydrogels also exhibited excellent elastic recovery, and the hysteresis of the BNNS nanocomposite hydrogels was negligible even after 30 cycles with a maximum tensile strain (ε max) of 700%. This work provides new insight into the fabrication of BN/polymer nanocomposites utilizing the excellent mechanical properties and transparency of BN. The results confirm that a few layers of BNNSs can also efficiently and directly improve the mechanical properties of composite polymer due to its stronger surface free energy and better wettability.

  6. Preparation and characterization of electrochemically deposited carbon nitride films on silicon substrate

    International Nuclear Information System (INIS)

    Yan Xingbin; Xu Tao; Chen Gang; Yang Shengrong; Liu Huiwen; Xue Qunji

    2004-01-01

    Carbon nitride films (CN x films) were deposited on Si(100) substrates by the electrolysis of methanol-urea solution at high voltage, atmospheric pressure, and low temperature. The microstructure and morphology of the resulting CN x films were analysed by means of Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectrometry (FTIR), x-ray diffraction (XRD), and atomic force microscopy. The tribological properties of the CN x films were examined on an UMT-2MT friction and wear test rig. The Raman spectrum showed two characteristic bands: a graphite G band and a disordered D band of carbon, which suggested the presence of an amorphous carbon matrix. XPS and FTIR measurements suggested the existence of both single and double carbon-nitride bonds in the film and the hydrogenation of the carbon nitride phase. The XRD spectrum showed various peaks of different d values, which could confirm the existence of the polycrystalline carbon nitride phase. The hydrogenated CN x films were compact and uniform, with a root mean square roughness of about 18 nm. The films showed excellent friction-reduction and wear-resistance, with the friction coefficient in the stable phase being about 0.08. In addition, the growth mechanism of the CN x films in liquid phase electro-deposition was discussed as well. It was assumed that the molecules of CH 3 OH and CO(NH 2 ) 2 were polarized under high electric field, and the CN x film was formed on the substrate through the reaction of the -CH 3 and -NH 2 groups on the cathode

  7. Joining technique of silicon nitride and silicon carbide in a mixture and/or in contact with high-melting metals and alloys

    International Nuclear Information System (INIS)

    Mueller-Zell, A.

    1980-01-01

    The following work gives a survey on possible joining techniques of silicon nitride (Si 3 N 4 ) and silicon carbide (SiC) in a mixture and/or in contact with high-melting metals and alloys. The problem arose because special ceramic materials such as Si 3 N 4 and SiC are to be used in gas turbines. The special ceramics in use may unavoidably come into contact with metals or the one hand, or form intended composite systems with them on the other hand, like e.g. the joining of a Si 3 N 4 disc with a metallic drive axis or ceramic blades with a metal wheel. The mixed body of X% ceramic (Si 3 N 4 , SiC) and Y% metal powder were prepared depending on the material combination at 1200 0 C-1750 0 C by hot-pressing or at 1200 0 C-2050 0 C by hot-pressing or pressureless sintering. The following possible ways were chosen as interlaminar bonding ceramic/metal/ceramic: on the one hand pressure welding (composite hot pressing) and the solid-state bonding in direct contact and by means of artificially included transition mixed layers, as well as material intermediate layers between metal and ceramic and on the other hand, soldering with active solder with molten phase. (orig./RW) [de

  8. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  9. Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

    2018-03-14

    We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

  10. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  11. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

  12. Luminescence properties of Ce3+-activated alkaline earth silicon nitride M2Si5N8 (M = Ca, Sr, Ba) materials

    NARCIS (Netherlands)

    Li, Y.Q.; With, de G.; Hintzen, H.T.J.M.

    2006-01-01

    The luminescence properties of Ce3+, Li+ or Na+ co-doped alkaline-earth silicon nitride M2Si5N8 (M=Ca, Sr, Ba) are reported. The solubility of Ce3+ and optical properties of M2-2xCexLixSi5N8 (x0.1) materials have been investigated as function of the cerium concentration by X-ray powder diffraction

  13. Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Kiser, Lames D.

    1990-01-01

    The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

  14. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  15. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  16. Damage Mechanisms and Controlled Crack Propagation in a Hot Pressed Silicon Nitride Ceramic. Ph.D. Thesis - Northwestern Univ., 1993

    Science.gov (United States)

    Calomino, Anthony Martin

    1994-01-01

    The subcritical growth of cracks from pre-existing flaws in ceramics can severely affect the structural reliability of a material. The ability to directly observe subcritical crack growth and rigorously analyze its influence on fracture behavior is important for an accurate assessment of material performance. A Mode I fracture specimen and loading method has been developed which permits the observation of stable, subcritical crack extension in monolithic and toughened ceramics. The test specimen and procedure has demonstrated its ability to generate and stably propagate sharp, through-thickness cracks in brittle high modulus materials. Crack growth for an aluminum oxide ceramic was observed to be continuously stable throughout testing. Conversely, the fracture behavior of a silicon nitride ceramic exhibited crack growth as a series of subcritical extensions which are interrupted by dynamic propagation. Dynamic initiation and arrest fracture resistance measurements for the silicon nitride averaged 67 and 48 J/sq m, respectively. The dynamic initiation event was observed to be sudden and explosive. Increments of subcritical crack growth contributed to a 40 percent increase in fracture resistance before dynamic initiation. Subcritical crack growth visibly marked the fracture surface with an increase in surface roughness. Increments of subcritical crack growth loosen ceramic material near the fracture surface and the fracture debris is easily removed by a replication technique. Fracture debris is viewed as evidence that both crack bridging and subsurface microcracking may be some of the mechanisms contributing to the increase in fracture resistance. A Statistical Fracture Mechanics model specifically developed to address subcritical crack growth and fracture reliability is used together with a damaged zone of material at the crack tip to model experimental results. A Monte Carlo simulation of the actual experiments was used to establish a set of modeling input

  17. Macroscopic Optomechanically Induced Transparency

    Science.gov (United States)

    Pate, Jacob; Castelli, Alessandro; Martinez, Luis; Thompson, Johnathon; Chiao, Ray; Sharping, Jay

    Optomechanically induced transparency (OMIT) is an effect wherein the spectrum of a cavity resonance is modified through interference between coupled excitation pathways. In this work we investigate a macroscopic, 3D microwave, superconducting radio frequency (SRF) cavity incorporating a niobium-coated, silicon-nitride membrane as the flexible boundary. The boundary supports acoustic vibrational resonances, which lead to coupling with the microwave resonances of the SRF cavity. The theoretical development and physical understanding of OMIT for our macroscopic SRF cavity is the same as that for other recently-reported OMIT systems despite vastly different optomechanical coupling factors and device sizes. Our mechanical oscillator has a coupling factor of g0 = 2 π . 1 ×10-5 Hz and is roughly 38 mm in diameter. The Q = 5 ×107 for the SRF cavity allows probing of optomechanical effects in the resolved sideband regime.

  18. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  19. DNA Physical Mapping via the Controlled Translocation of Single Molecules through a 5-10nm Silicon Nitride Nanopore

    Science.gov (United States)

    Stein, Derek; Reisner, Walter; Jiang, Zhijun; Hagerty, Nick; Wood, Charles; Chan, Jason

    2009-03-01

    The ability to map the binding position of sequence-specific markers, including transcription-factors, protein-nucleic acids (PNAs) or deactivated restriction enzymes, along a single DNA molecule in a nanofluidic device would be of key importance for the life-sciences. Such markers could give an indication of the active genes at particular stage in a cell's transcriptional cycle, pinpoint the location of mutations or even provide a DNA barcode that could aid in genomics applications. We have developed a setup consisting of a 5-10 nm nanopore in a 20nm thick silicon nitride film coupled to an optical tweezer setup. The translocation of DNA across the nanopore can be detected via blockades in the electrical current through the pore. By anchoring one end of the translocating DNA to an optically trapped microsphere, we hope to stretch out the molecule in the nanopore and control the translocation speed, enabling us to slowly scan across the genome and detect changes in the baseline current due to the presence of bound markers.

  20. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  1. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  2. Reprint of: Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-11-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. Copyright © 2010 Elsevier Inc. All rights reserved.

  3. Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

    International Nuclear Information System (INIS)

    Kumar, Sanjiv; Raju, V.S.

    2004-01-01

    This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14 N(α,α) 14 N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28 Si(p,p) 28 Si and 14 N(p,p) 14 N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1 H( 19 F,αγ) 16 O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si 1-(x+y) N x H y films

  4. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    Directory of Open Access Journals (Sweden)

    Ryoji Yukino

    2017-01-01

    Full Text Available We describe wavelength tuning in a one dimensional (1D silicon nitride nano-grating guided mode resonance (GMR structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

  5. Effect of Primary Recrystallized Microstructure and Nitriding on Secondary Recrystallization in Grain Oriented Silicon Steel by Low Temperature Slab Reheating

    Directory of Open Access Journals (Sweden)

    LIU Gong-tao

    2018-01-01

    Full Text Available Different primary recrystallized grain sizes were obtained by controlling decarburization process in grain oriented silicon steel produced by low temperature slab reheating technique. The effect of primary grain size on secondary recrystallization and magnetic properties was studied. The appropriate nitrogen content after nitriding was explored in case of very large primary grain size, and the effect of {411}〈148〉 primary recrystallized texture on the abnormal growth behavior was discussed. The results show that an increase in average primary grain size from 10μm to 15μm leads to an increase of secondary recrystallization temperature and a sharper Goss texture with higher magnetic permeability, in the condition of a very large average primary grain size of 28μm, the suitable amount of nitrogen increases to about 6×10-4. The {411}〈148〉 oriented grains in primary recrystallized microstructure can easily grow into larger sizes due to their size advantage, and thus hinder the abnormal growth of secondary grains, moreover, the hindering effect is more pronounced in the abnormal growth of Brass-oriented grains due to their misorientation with low migration rate other than Goss grains.

  6. Experimental evidence of the impact of rare-earth elements on particle growth and mechanical behaviour of silicon nitride

    International Nuclear Information System (INIS)

    Satet, Raphaelle L.; Hoffmann, Michael J.; Cannon, Rowland M.

    2006-01-01

    The impact of various rare-earth and related doping elements (R = Lu, Sc, Yb, Y, Sm, La) on the grain growth anisotropy and the mechanical properties of polycrystalline β-silicon nitride ceramics has been studied. Model experiments, in which Si 3 N 4 particles can grow freely in an R-Si-Mg-oxynitride glass matrix, show that, with increasing ionic radius of the additive, grain anisotropy increases due to non-linear growth kinetics. Toughness and strength are affected by the rare-earth element. Samples of equivalent grain sizes and morphologies yield an increasing toughness with increasing ion size of the R 3+ , reflecting an increasingly intergranular crack path. These samples are also strong and flaw tolerant, but the trends of strength and toughness do not exactly match. The choice of the rare-earth is essential to tailor microstructure, interfacial strength and mechanical properties. However, somewhat different trends for properties from IIIb and lanthanide additives indicate that more than the R 3+ size (i.e., purely ionic bond strength between R 3+ and its neighbours) is important. The electronic structure of the R-element is responsible for the type of dopant adsorption and the properties of the interface

  7. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  8. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    International Nuclear Information System (INIS)

    Reyes, R; Cremona, M; Achete, C A

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq 3 ) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq 3 /Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  9. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  10. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  11. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

    2016-02-15

    The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

  12. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

  13. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  14. Effect of Silicon Nitride Incorporation on Microstructure and Hardness of Ni-Co Metal Matrix Nanocomposite

    Directory of Open Access Journals (Sweden)

    Ridwan

    2015-01-01

    Full Text Available Ni-Co-Si3N4 nanocomposite coatings were prepared by electrodeposition technique. The deposition was performed at 50 mA cm-2 on copper substrate. The working temperature of electrodepostion was constant at 500C in an acidic environment of pH 4. The effects of silicon in the nickel-cobalt metal matrix composite were investigated. Energy dispersive X-ray spectroscopy was used to determine the composition. The Co content in the coatings is in the range 27-49 at.%. The phase present in the Ni-Co-Si3N4 were examined with an X-ray diffraction analysis. All the reflection patterns indicate that the coatings are having face-centered cubic (fcc structure. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increases with increasing silicon content. The microhardness of the Ni-Co-Si3N4 nanocomposite coating increased from 549 HV for Nickel-cobalt alloy coating to 641 HV for Ni-Co-Si3N4 nanocomposite coating with 5.47 at.% Si.

  15. In situ characterization of thin film growth: Boron nitride on silicon

    International Nuclear Information System (INIS)

    Fukarek, W.

    2001-01-01

    Real-time ellipsometry (RTE) in combination with particle flux measurement is applied to ion beam assisted deposition of boron nitride (BN) films. RTE is used as a tool for process diagnostic to improve the deposition stability. A novel technique for the determination of absolute density depth profiles from dynamic growth rate data and film forming particle flux is employed. From real-time cantilever curvature measurement and simultaneously recorded film thickness data instantaneous stress depth profiles are derived with a depth resolution in the nm range. The synergistic effects on the information obtained from RTE, particle flux, and cantilever bending data are demonstrated. The density of turbostratic BN (tBN) is found to increase slightly with film thickness while the compressive stress decreases, indicating an increasing quality and/or size of crystallites in the course of film growth. Refractive index and density depth profiles in cubic BN (cBN) films correspond perfectly to structural information obtained from dark field transmission electron microscope graphs. The established tBN/cBN two-layer model is found to be a crude approximation that has to be replaced by a three-layer model including nucleation, grain growth, and coalescence of cBN. The instantaneous compressive stress in a homogeneous tBN film is found to decrease, while the density increases during growth. The instantaneous compressive stress depth profiles in cBN films are more complex and not easy to understand but reliable information on the structural evolution during growth can be extracted

  16. Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

    Science.gov (United States)

    Liao, Bo-Huei; Hsiao, Chien-Nan

    2014-02-01

    Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

  17. Efficient and Stable CsPbBr3 Quantum-Dot Powders Passivated and Encapsulated with a Mixed Silicon Nitride and Silicon Oxide Inorganic Polymer Matrix.

    Science.gov (United States)

    Yoon, Hee Chang; Lee, Soyoung; Song, Jae Kyu; Yang, Heesun; Do, Young Rag

    2018-04-11

    Despite the excellent optical features of fully inorganic cesium lead halide (CsPbX 3 ) perovskite quantum dots (PeQDs), their unstable nature has limited their use in various optoelectronic devices. To mitigate the instability issues of PeQDs, we demonstrate the roles of dual-silicon nitride and silicon oxide ligands of the polysilazane (PSZ) inorganic polymer to passivate the surface defects and form a barrier layer coated onto green CsPbBr 3 QDs to maintain the high photoluminescence quantum yield (PLQY) and improve the environmental stability. The mixed SiN x /SiN x O y /SiO y passivated and encapsulated CsPbBr 3 /PSZ core/shell composite can be prepared by a simple hydrolysis reaction involving the addition of adding PSZ as a precursor and a slight amount of water into a colloidal CsPbBr 3 QD solution. The degree of the moisture-induced hydrolysis reaction of PSZ can affect the compositional ratio of SiN x , SiN x O y , and SiO y liganded to the surfaces of the CsPbBr 3 QDs to optimize the PLQY and the stability of CsPbBr 3 /PSZ core/shell composite, which shows a high PLQY (∼81.7%) with improved thermal, photo, air, and humidity stability as well under coarse conditions where the performance of CsPbBr 3 QDs typically deteriorate. To evaluate the suitability of the application of the CsPbBr 3 /PSZ powder to down-converted white-light-emitting diodes (DC-WLEDs) as the backlight of a liquid crystal display (LCD), we fabricated an on-package type of tricolor-WLED by mixing the as-synthesized green CsPbBr 3 /PSZ composite powder with red K 2 SiF 6 :Mn 4+ phosphor powder and a poly(methyl methacrylate)-encapsulating binder and coating this mixed paste onto a cup-type blue LED. The fabricated WLED show high luminous efficacy of 138.6 lm/W (EQE = 51.4%) and a wide color gamut of 128% and 111% without and with color filters, respectively, at a correlated color temperature of 6762 K.

  18. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  19. Surface topography of silicon nitride affects antimicrobial and osseointegrative properties of tibial implants in a murine model.

    Science.gov (United States)

    Ishikawa, Masahiro; de Mesy Bentley, Karen L; McEntire, Bryan J; Bal, B Sonny; Schwarz, Edward M; Xie, Chao

    2017-12-01

    While silicon nitride (Si 3 N 4 ) is an antimicrobial and osseointegrative orthopaedic biomaterial, the contribution of surface topography to these properties is unknown. Using a methicillin-resistant strain of Staphylococcus aureus (MRSA), this study evaluated Si 3 N 4 implants in vitro utilizing scanning electron microscopy (SEM) with colony forming unit (CFU) assays, and later in an established in vivo murine tibia model of implant-associated osteomyelitis. In vitro, the "as-fired" Si 3 N 4 implants displayed significant reductions in adherent bacteria versus machined Si 3 N 4 (2.6 × 10 4 vs. 8.7 × 10 4 CFU, respectively; p SEM imaging demonstrated that MRSA cannot directly adhere to native as-fired Si 3 N 4 . Subsequently, a cross-sectional study was completed in which sterile or MRSA contaminated as-fired and machined Si 3 N 4 implants were inserted into the tibiae of 8-week old female Balb/c mice, and harvested on day 1, 3, 5, 7, 10, or 14 post-operatively for SEM. The findings demonstrated that the antimicrobial activity of the as-fired implants resulted from macrophage clearance of the bacteria during biofilm formation on day 1, followed by osseointegration through the apparent recruitment of mesenchymal stem cells on days 3-5, which differentiated into osteoblasts on days 7-14. In contrast, the antimicrobial behavior of the machined Si 3 N 4 was due to repulsion of the bacteria, a phenomenon that also limited osteogenesis, as host cells were also unable to adhere to the machined surface. Taken together, these results suggest that the in vivo biological behavior of Si 3 N 4 orthopaedic implants is driven by critical features of their surface nanotopography. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 3413-3421, 2017. © 2017 Wiley Periodicals, Inc.

  20. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  1. Efficient Semitransparent Perovskite Solar Cells Using a Transparent Silver Electrode and Four-Terminal Perovskite/Silicon Tandem Device Exploration

    Directory of Open Access Journals (Sweden)

    Dazheng Chen

    2018-01-01

    Full Text Available Four-terminal tandem solar cells employing a perovskite top cell and crystalline silicon (Si bottom cell offer a simpler pathway to surpass the efficiency limit of market-leading single-junction silicon solar cells. To obtain cost-effective top cells, it is crucial to develop transparent conductive electrodes with low parasitic absorption and manufacturing cost. The commonly used indium tin oxide (ITO shows some drawbacks, like the increasing prices and high-energy magnetron sputtering process. Transparent metal electrodes are promising candidates owing to the simple evaporation process, facile process conditions, and high conductivity, and the cheaper silver (Ag electrode with lower parasitic absorption than gold may be the better choice. In this work, efficient semitransparent perovskite solar cells (PSCs were firstly developed by adopting the composite cathode of an ultrathin Ag electrode at its percolation threshold thickness (11 nm, a molybdenum oxide optical coupling layer, and a bathocuproine interfacial layer. The resulting power conversion efficiency (PCE is 13.38% when the PSC is illuminated from the ITO side and the PCE is 8.34% from the Ag side, and no obvious current hysteresis can be observed. Furthermore, by stacking an industrial Si bottom cell (PCE = 14.2% to build a four-terminal architecture, the overall PCEs of 17.03% (ITO side and 11.60% (Ag side can be obtained, which are 27% and 39% higher, respectively, than those of the perovskite top cell. Also, the PCE of the tandem cell has exceeded that of the reference Si solar cell by about 20%. This work provides an outlook to fabricate high-performance solar cells via the cost-effective pathway.

  2. Atomic layer deposited ZnO:B as transparent conductive oxide for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Gatz, H.A.; Koushik, D.; Rath, J.K.; Kessels, W.M.M.; Schropp, R.E.I.

    A key factor to improve the performance of silicon heterojunction solar cells (SHJ) is increasing their short circuit density (Jsc) by reducing the parasitic absorption of light in the front side of the cell. Therefore, we have investigated the replacement of the conventional sputtered ITO on the

  3. Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks

    NARCIS (Netherlands)

    Raz, O.; Tassaert, M.; Roelkens, G.C.; Dorren, H.J.S.

    2013-01-01

    As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a

  4. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  5. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  6. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  7. Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

    2004-01-01

    We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

  8. Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

    Energy Technology Data Exchange (ETDEWEB)

    Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu; Economou, Demetre J., E-mail: economou@uh.edu [Department of Chemical and Biomolecular Engineering, Plasma Processing Laboratory, University of Houston, Houston, Texas 77204 (United States)

    2016-07-15

    Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreased sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.

  9. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  10. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  11. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. A novel laser alignment system for tracking detectors using transparent silicon strip sensors

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-02-01

    Modern large-area precision tracking detectors require increasing accuracy of the geometrical alignment over large distances. A novel optical multi-point alignment system has been developed for the muon spectrometer of the ATLAS detector at the Large Hadron Collider. The system uses collimated laser beams as alignment references which are monitored by semi-transparent optical position sensors. The custom designed sensors provide very precise and uniform position information on the order of 1 μm over a wide measurement range. At suitable laser wavelengths, produced by laser diodes, transmission rates above 90% have been achieved which allow to align more than 30 sensors along one laser beam. With this capability and equipped with integrated readout electronics, the alignment system offers high flexibility for precision applications in a wide range of detector systems. (orig.)

  14. Transparent amorphous silicon sensors for the alignment system of particle detectors

    International Nuclear Information System (INIS)

    Fernandez, M.G.

    1999-01-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  15. Transparent amorphous silicon sensors for the alignment system of particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M.G. [Ciemat, Madrid (Spain)

    1999-07-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  16. The influence of powder composition and sintering temperature on transformation kinetics, structure and mechanical properties of hot-pressed silicon nitride

    International Nuclear Information System (INIS)

    Knoch, H.; Ziegler, G.

    1977-01-01

    The strength at room temperature of hot-pressed silicon nitride is strongly dependent on the structure which in turn depends on powder composition and process parameters. Connections between production conditions (MgO content, pressing temperature, pressing time), structure (α/β content and morphology), and the properties at room temperature are discussed. The growth of oblong β grains - as a direct result of phase transition from α- to β-Si 3 N 4 - results in microstructural meshing and thus in a higher strength. Optimum mechanical properties are achieved after full phase transformation and with a microstructure as fine as possible. The direct connection between strength and transformed β fraction indicates a possible way for a relatively fast determination of optimum properties for a given initial powder. (orig.) [de

  17. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  18. Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

    International Nuclear Information System (INIS)

    Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

    2012-01-01

    Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

  19. Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

    International Nuclear Information System (INIS)

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2015-01-01

    Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins

  20. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  1. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  2. Concentrator bifacial crystalline silicon solar cells with multi-wire metallization attached to TCO layers using transparent conductive polymers

    Science.gov (United States)

    Untila, Gennady; Chebotareva, Alla; Kost, Tatiana; Salazkin, Sergei; Shaposhnikova, Vera; Shvarts, Maxim

    2017-09-01

    Replacing expensive silver with inexpensive copper for the metallization of silicon wafer solar cells can lead to substantial reductions in material costs associated with cell production. A promising approach is the use of multi-wire design. This technology uses many wires in the place of busbars, and the copper wires are "soldered" during the low-temperature lamination process to the fingers (printed or plated) or to the transparent conductive oxide (TCO) layer, e.g. in the case of the α-Si/c-Si heterojunction cells. Here we describe a solar cell design in which wires are attached to TCO layers using transparent conductive polymer (TCP) films. To this end, we have synthesized a number of thermoplastics, poly(arylene ether ketone) copolymers (co-PAEKs), containing phthalide in their main chain. The fraction of phthalide-containing units in the copolymers was p = 3, 5, 15, and 50 mol %. With increasing p, the peak strain temperature of the co-PAEKs rises from 205 to 290 °C and their optical band gap and refractive index increase from 3.12 to 3.15 eV and from 1.6 to 1.614, respectively. The copolymers have a negligible absorption coefficient in the wavelength range 400- 1100 nm. When exposed to an excess pressure of 1 atm or above, co-PAEK films less than 30 µm in thickness undergo a transition from a dielectric to a conductive state. The resistivity (ρC) of wire/TCP/TCO (ITO = In2O3:Sn and IFO = In2O3:F) contacts ranges from 0.37 to 1.43 mΩ cm2. The polymer with the highest phthalide content (p = 50 mol %) has the lowest ρC. The average work of adhesion per unit area determined by pulling off the wires from the polymer surface depends on both the phthalide content of the co-PAEKs and their reduced viscosity, ranging from 14.3 to 43.5 N/cm. The highest value was obtained for the co-PAEK with p = 50 mol %. We have fabricated low-concentration bifacial IFO/(n+pp+)Cz-Si/ITO solar cells with a wire contact grid attached to IFO and ITO using a co-PAEK film. The

  3. Determination of molecular stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Unversidade de Lisboa, Estrada Nacional 10 ao km 139.7, 2695-066 Bobadela LRS (Portugal); Bergmaier, A. [Institut für Angewandte Physik und Messtechnik, Fakultät für Luft und Raumfahrttechnik, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany); Mizohata, K. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Msimanga, M. [iThemba LABS Gauteng, National Research Foundation, Private Bag 11, WITS 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, Private Bag X680, Pretoria 0001 (South Africa); Räisänen, J. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Sajavaara, T. [Department of Physics, University of Jyväskylä, Survontie 9, 40014 Jyväskylä (Finland); Simon, A. [International Atomic Energy Agency, Division of Physical and Chemical Sciences, Vienna International Centre, P.O. Box 100, A-1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences, (ATOMKI), P.O. Box 51, H-4001 Debrecen (Hungary)

    2015-10-01

    Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si{sub 3}N{sub 4}, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the ions involved, which in the case of HI-ERDA is both the primary beam, and the recoiled species. We measured the stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in a well-characterised silicon nitride membrane. The measurements were made by independent groups utilising different experimental setups and methods. In some cases there is extensive overlap of the energy range in different experiments, allowing a comparison of the different results. The four independent data sets reported in this work are in excellent agreement with each other, in the cases where similar energy ranges were measured. On the other hand, the data are in most cases higher than calculations made with the interpolative schemes SRIM and MSTAR together with the Bragg rule. Better agreement is found with MSTAR in some of the cases studied. This work is a significant extension of the heavy ion stopping power data base for silicon nitride.

  4. Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

    KAUST Repository

    Sevilla, Galo T.

    2014-02-22

    An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

    KAUST Repository

    Sevilla, Galo T.; Rojas, Jhonathan Prieto; Fahad, Hossain M.; Hussain, Aftab M.; Ghanem, Rawan; Smith, Casey; Hussain, Muhammad Mustafa

    2014-01-01

    An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; Zeijl, H. van; Wien, W.H.A.; Pham, H.T.M.; Kwakernaak, C.; Knoops, H.C.M.; Erwin Kessels, W.M.M.; Sanden, R.M.C.M. van de; Voogt, F.C.; Roozeboom, F.; Sarro, P.M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

  7. Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; van Zeijl, H.; Wien, W. H. A.; Pham, H. T. M.; Kwakernaak, C.; Knoops, H. C. M.; Kessels, W. M. M.; R. van de Sanden,; Voogt, F. C.; Roozeboom, F.; Sarro, P. M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the

  8. The SNAP trial: a double blind multi-center randomized controlled trial of a silicon nitride versus a PEEK cage in transforaminal lumbar interbody fusion in patients with symptomatic degenerative lumbar disc disorders: study protocol

    Science.gov (United States)

    2014-01-01

    Background Polyetheretherketone (PEEK) cages have been widely used in the treatment of lumbar degenerative disc disorders, and show good clinical results. Still, complications such as subsidence and migration of the cage are frequently seen. A lack of osteointegration and fibrous tissues surrounding PEEK cages are held responsible. Ceramic implants made of silicon nitride show better biocompatible and osteoconductive qualities, and therefore are expected to lower complication rates and allow for better fusion. Purpose of this study is to show that fusion with the silicon nitride cage produces non-inferior results in outcome of the Roland Morris Disability Questionnaire at all follow-up time points as compared to the same procedure with PEEK cages. Methods/Design This study is designed as a double blind multi-center randomized controlled trial with repeated measures analysis. 100 patients (18–75 years) presenting with symptomatic lumbar degenerative disorders unresponsive to at least 6 months of conservative treatment are included. Patients will be randomly assigned to a PEEK cage or a silicon nitride cage, and will undergo a transforaminal lumbar interbody fusion with pedicle screw fixation. Primary outcome measure is the functional improvement measured by the Roland Morris Disability Questionnaire. Secondary outcome parameters are the VAS leg, VAS back, SF-36, Likert scale, neurological outcome and radiographic assessment of fusion. After 1 year the fusion rate will be measured by radiograms and CT. Follow-up will be continued for 2 years. Patients and clinical observers who will perform the follow-up visits will be blinded for type of cage used during follow-up. Analyses of radiograms and CT will be performed independently by two experienced radiologists. Discussion In this study a PEEK cage will be compared with a silicon nitride cage in the treatment of symptomatic degenerative lumbar disc disorders. To our knowledge, this is the first randomized controlled

  9. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    KAUST Repository

    Hazari, Arnab

    2015-11-12

    III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

  10. Silicon nitride grids are compatible with correlative negative staining electron microscopy and tip-enhanced Raman spectroscopy for use in the detection of micro-organisms.

    Science.gov (United States)

    Lausch, V; Hermann, P; Laue, M; Bannert, N

    2014-06-01

    Successive application of negative staining transmission electron microscopy (TEM) and tip-enhanced Raman spectroscopy (TERS) is a new correlative approach that could be used to rapidly and specifically detect and identify single pathogens including bioterrorism-relevant viruses in complex samples. Our objective is to evaluate the TERS-compatibility of commonly used electron microscopy (EM) grids (sample supports), chemicals and negative staining techniques and, if required, to devise appropriate alternatives. While phosphortungstic acid (PTA) is suitable as a heavy metal stain, uranyl acetate, paraformaldehyde in HEPES buffer and alcian blue are unsuitable due to their relatively high Raman scattering. Moreover, the low thermal stability of the carbon-coated pioloform film on copper grids (pioloform grids) negates their utilization. The silicon in the cantilever of the silver-coated atomic force microscope tip used to record TERS spectra suggested that Si-based grids might be employed as alternatives. From all evaluated Si-based TEM grids, the silicon nitride (SiN) grid was found to be best suited, with almost no background Raman signals in the relevant spectral range, a low surface roughness and good particle adhesion properties that could be further improved by glow discharge. Charged SiN grids have excellent particle adhesion properties. The use of these grids in combination with PTA for contrast in the TEM is suitable for subsequent analysis by TERS. The study reports fundamental modifications and optimizations of the negative staining EM method that allows a combination with near-field Raman spectroscopy to acquire a spectroscopic signature from nanoscale biological structures. This should facilitate a more precise diagnosis of single viral particles and other micro-organisms previously localized and visualized in the TEM. © 2014 The Society for Applied Microbiology.

  11. Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

    2005-07-15

    Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

  12. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  13. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

    2005-01-01

    Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

  14. Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

    Science.gov (United States)

    Pandey, Rahul; Chaujar, Rishu

    2016-12-01

    In this work, a novel four-terminal perovskite/SiC-based rear contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick rear contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.

  15. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  16. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  17. Gallium nitride-based micro-opto-electro-mechanical systems

    Science.gov (United States)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

  18. Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

    Science.gov (United States)

    Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

    2018-05-01

    Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

  19. Technology for bonding silicon nitride ceramics. Heat treatment technology to improve diffusion bonding strength; Chikka keiso ceramics no setsugo gijutsu. Kakusan setsugo kyodo kaizen no tame no metsushori gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, M.; Shigematsu, K. [National Industrial Research Institute of Nagoya,Nagoya (Japan)

    1999-01-25

    Silicon nitride ceramics is a structural ceramics with excellent high temperature strength and tenacity, being expected of expansion of application as a high temperature material. However, its processibility is poor, and special sintering technique is required to manufacture members of complex shapes. Therefore, development has been made on a technology to manufacture bonded materials with high mechanical strength, by which diffusion bonding in high temperature nitrogen gas and heat treatment are combined, and crystalline structure in the vicinity of bonding interface is controlled. (translated by NEDO)

  20. Broadband near infrared quantum cutting in Bi–Yb codoped Y2O3 transparent films on crystalline silicon

    International Nuclear Information System (INIS)

    Qu Minghao; Wang Ruzhi; Chen Yan; Zhang Ying; Li Kaiyu; Yan Hui

    2012-01-01

    By a pulsed laser deposition technique the efficient broadband near-infrared downconversion Bi–Yb codoped crystallization Y 2 O 3 transparent films have been grown successfully on Si (1 0 0) substrates. Upon excitation of ultraviolet photon varying from 300 to 400 nm, the near infrared quantum cutting has been obtained, which is originated from the transitions of the transition-metal Bi 3+3 P 1 level to Yb 3+2 F 5/2 level. The downconversion quantum efficiency of films is estimated to be 152%. The transparent Y 2 O 3 films may have potential application in enhancing the conversion efficiency of crystalline Si solar cells. - Highlights: ► The downconversion Y 2 O 3 :Bi,Yb films has good transparency. ► Y 2 O 3 :Bi,Yb films possess a broadband absorption in the UV region of 300–400 nm. ► The films may have potential application in enhancing the efficiency of c-Si cells.

  1. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  2. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  3. Gold-coated iron nanoparticles in transparent Si3N4 matrix thin films

    Science.gov (United States)

    Sánchez-Marcos, J.; Céspedes, E.; Jiménez-Villacorta, F.; Muñoz-Martín, A.; Prieto, C.

    2013-06-01

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si3N4 system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si3N4 multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  4. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  5. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    Science.gov (United States)

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  6. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  7. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  8. Transformation-Toughened Silicon Nitride

    Science.gov (United States)

    1988-08-01

    of pores, could be eliminated by iso - statically pressing the green flexure test bars after the burnout operation and before the sintering...Company Fourth and Canal Streets PO Box 27003 Richmond, VA 23261 Stephen C. Danforth Rutgers University Post Office Box 909 Bowser Road

  9. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  10. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Science.gov (United States)

    Mondal, Praloy; Das, Debajyoti

    2017-07-01

    Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I〈002〉/I〈103〉 > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm-1 and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO2 coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (VOC) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO2 counterpart, maintains a high transparency to the solar radiation and improves the VOC, while reduced diffusion of Zn across the p-layer creates less defects at the p-i interface in Si:H cells and thereby, increases the FF. Nearly identical conversion efficiency is preserved for both TCO substrates. Excellent c-axis orientation even at low growth temperature promises improved device performance by extended parametric optimization.

  11. The Design, Fabrication and Characterization of a Transparent Atom Chip

    Directory of Open Access Journals (Sweden)

    Ho-Chiao Chuang

    2014-06-01

    Full Text Available This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.

  12. The Design, Fabrication and Characterization of a Transparent Atom Chip

    Science.gov (United States)

    Chuang, Ho-Chiao; Huang, Chia-Shiuan; Chen, Hung-Pin; Huang, Chi-Sheng; Lin, Yu-Hsin

    2014-01-01

    This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments. PMID:24922456

  13. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  14. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  15. Further improvements in conducting and transparent properties of ZnO:Ga films with perpetual c-axis orientation: Materials optimization and application in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Praloy; Das, Debajyoti, E-mail: erdd@iacs.res.in

    2017-07-31

    Highlights: • ZnO:Ga film with perpetual c-axis orientation at low T{sub S} by RF magnetron sputtering. • High conductivity (200 S cm{sup −1}) and elevated transmission (∼93% at 500 nm) in nano-sheet like structure. • Si solar cell on ZnO:Ga with efficiency comparable to similar cell on U-type SnO{sub 2} coated Asahi glass. • Higher open circuit voltage and better fill factor with ZnO:Ga than SnO{sub 2}. - Abstract: Technologically appropriate device friendly ZnO:Ga films have been prepared at a low growth temperature (100 °C) by changing the RF power (P) applied to the magnetron plasma. Structurally preferred c-axis orientation of the ZnO:Ga network has been attained with I{sub 〈002〉}/I{sub 〈103〉} > 5. The c-axis oriented grains of wurtzite ZnO:Ga grows geometrically and settles in tangentially, providing favorable conduction path for stacked layer devices. Nano-sheet like structures produced at the surface are interconnected and provide conducting path across the surface; however, those accommodate a lot of pores in between that help better light trapping and reduce the reflection loss. The optimized ZnO:Ga thin film prepared at RF power of 200 W has 〈002〉 oriented grains of average size ∼10 nm and exhibits a very high conductivity ∼200 S cm{sup −1} and elevated transmission (∼93% at 500 nm) in the visible range. The optimized ZnO:Ga film has been used as the transparent conducting oxide (TCO) window layer of RF-PECVD grown silicon thin film solar cells in glass/TCO/p-i-n-Si/Al configuration. The characteristics of identically prepared p-i-n-Si solar cells are compared by replacing presently developed ZnO:Ga TCO with the best quality U-type SnO{sub 2} coated Asahi glass substrates. The ZnO:Ga coated glass substrate offers a higher open circuit voltage (V{sub OC}) and the higher fill factor (FF). The ZnO:Ga film being more stable in hydrogen plasma than its SnO{sub 2} counterpart, maintains a high transparency to the solar

  16. Semi-transparent solar cells

    International Nuclear Information System (INIS)

    Sun, J; Jasieniak, J J

    2017-01-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

  17. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  18. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  19. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  20. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  1. Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells; Tratamiento de oxidos conductores transparentes por procesos laser para el desarrollo de celulas fotovoltaicas de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Canteli Perez-Caballero, D.

    2015-07-01

    Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

  2. Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    2018-01-01

    with the sharing of information and the perceived quality of the information shared. This narrow focus on information and quality, however, overlooks the dynamics of organizational transparency. To provide a more structured conceptualization of organizational transparency, this article unpacks the assumptions......Transparency is an increasingly prominent area of research that offers valuable insights for organizational studies. However, conceptualizations of transparency are rarely subject to critical scrutiny and thus their relevance remains unclear. In most accounts, transparency is associated...... that shape the extant literature, with a focus on three dimensions: conceptualizations, conditions, and consequences. The contribution of the study is twofold: (a) On a conceptual level, we provide a framework that articulates two paradigmatic positions underpinning discussions of transparency, verifiability...

  3. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF{sup +}, CF{sub 2}{sup +}, CHF{sub 2}{sup +}, and CH{sub 2}F{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi [Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan)

    2011-09-15

    Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si{sub 3}N{sub 4}) reactive ion etching. This study focuses on the elementary reactions of energetic CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions with Si{sub 3}N{sub 4} surfaces. In the experiments, Si{sub 3}N{sub 4} surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions as well as hydrogen-free CF{sub 2}{sup +} and CF{sup +} ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si{sub 3}N{sub 4} by hydrofluorocarbon ions, i.e., CHF{sub 2}{sup +} and CH{sub 2}F{sup +}, are higher than those by the corresponding fluorocarbon ions, i.e., CF{sub 2}{sup +} and CF{sup +}, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content.

  4. Microfabrication, separations, and detection by mass spectrometry on ultrathin-layer chromatography plates prepared via the low-pressure chemical vapor deposition of silicon nitride onto carbon nanotube templates.

    Science.gov (United States)

    Kanyal, Supriya S; Häbe, Tim T; Cushman, Cody V; Dhunna, Manan; Roychowdhury, Tuhin; Farnsworth, Paul B; Morlock, Gertrud E; Linford, Matthew R

    2015-07-24

    Microfabrication of ultrathin-layer chromatography (UTLC) plates via conformal deposition of silicon nitride by low-pressure chemical vapor deposition onto patterned carbon nanotube (CNT) scaffolds was demonstrated. After removal of the CNTs and hydroxylation, the resulting UTLC phase showed no expansion or distortion of their microfeatures and the absence/reduction of remaining nitrogenic species. Developing time of a mixture of lipophilic dyes on this UTLC plates was 86% shorter than on high-performance thin-layer chromatography (HPTLC) plates. A water-soluble food dye mixture was also separated resulting in low band broadening and reduced developing time compared to HPTLC. For the latter example, mobile phase optimization on a single UTLC plate consisted of 14 developments with different mobile phases, each preceded by a plate prewashing step. The same plate was again reused for additional 11 separations under varying conditions resulting in a development procedure with a mean separation efficiency of 233,000theoretical plates/m and a reduced mobile phase consumption of only 400μL. This repeated use proved the physical robustness of the ultrathin layer and its resistance to damage. The layer was highly suited for hyphenation to ambient mass spectrometry, including desorption electrospray ionization (DESI) mass spectrometry imaging and direct analysis in real time (DART) mass spectrometry. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. TRANSPARENT CONCRETE

    OpenAIRE

    Sandeep Sharma*, Dr. O.P. Reddy

    2017-01-01

    Transparent concrete is the new type of concrete introduced in todays world which carries special property of light transmitting due to presence of light Optical fibres. Which is also known as translucent concrete or light transmitting concrete, it is achieved by replacing coarse aggregates with transparent alternate materials (Optical fibres). The binding material in transparent concrete may be able to transmit light by using clear resins the concrete mix. The concrete used in industry in pr...

  6. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  7. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  8. Color transparency

    International Nuclear Information System (INIS)

    Pire, B.; Ralston, J.P.

    1991-01-01

    This paper reviews the physics of color transparency and the unexpected energy dependence of recent measurements of high-energy fixed-angle elastic scattering in nuclear targets. The authors point out advantages of using transparency as a tool, introducing two concepts - spin and flavor flow filtering - that may be studied with nuclear targets. The special case of electroproduction is also considered

  9. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  10. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  11. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  12. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  13. Efficient Near-Infrared-Transparent Perovskite Solar Cells Enabling Direct Comparison of 4-Terminal and Monolithic Perovskite/Silicon Tandem Cells

    OpenAIRE

    Werner, Jérémie; Barraud, Loris; Walter, Arnaud; Bräuninger, Matthias; Sahli, Florent; Sacchetto, Davide; Tétreault, Nicolas; Paviet-Salomon, Bertrand; Moon, Soo-Jin; Allebé, Christophe; Despeisse, Matthieu; Nicolay, Sylvain; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

    2016-01-01

    Combining market-proven silicon solar cell technology with an efficient wide band gap top cell into a tandem device is an attractive approach to reduce the cost of photovoltaic systems. For this, perovskite solar cells are promising high-efficiency top cell candidates, but their typical device size (

  14. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  15. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  16. Modelling and simulation of a thermally induced optical transparency in a dual micro-ring resonator.

    Science.gov (United States)

    Lydiate, Joseph

    2017-07-01

    This paper introduces the simulation and modelling of a novel dual micro-ring resonator. The geometric configuration of the resonators, and the implementation of a simulated broadband excitation source, results in the realization of optical transparencies in the combined through port output spectrum. The 130 nm silicon on insulator rib fabrication process is adopted for the simulation of the dual-ring configuration. Two titanium nitride heaters are positioned over the coupling regions of the resonators, which can be operated independently, to control the spectral position of the optical transparency. A third heater, centrally located above the dual resonator rings, can be used to red shift the entire spectrum to a required reference resonant wavelength. The free spectral range with no heater currents applied is 4.29 nm. For a simulated heater current of 7 mA (55.7 mW heater power) applied to one of the through coupling heaters, the optical transparency exhibits a red shift of 1.79 nm from the reference resonant wavelength. The ring-to-ring separation of approximately 900 nm means that it can be assumed that there is a zero ring-to-ring coupling field in this model. This novel arrangement has potential applications as a gas mass airflow sensor or a gas species identification sensor.

  17. Contact pin-printing of albumin-fungicide conjugate for silicon nitride-based sensors biofunctionalization: Multi-technique surface analysis for optimum immunoassay performance

    Science.gov (United States)

    Gajos, Katarzyna; Budkowski, Andrzej; Tsialla, Zoi; Petrou, Panagiota; Awsiuk, Kamil; Dąbczyński, Paweł; Bernasik, Andrzej; Rysz, Jakub; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios

    2017-07-01

    Mass fabrication of integrated biosensors on silicon chips is facilitated by contact pin-printing, applied for biofunctionalization of individual Si3N4-based transducers at wafer-scale. To optimize the biofunctionalization for immunochemical (competitive) detection of fungicide thiabendazole (TBZ), Si3N4 surfaces are modified with (3-aminopropyl)triethoxysilane and examined after: immobilization of BSA-TBZ conjugate (probe) from solutions with different concentration, blocking with bovine serum albumin (BSA), and immunoreaction with a mouse monoclonal antibody against TBZ. Nanostructure, surface density, probe composition and coverage uniformity of protein layers are evaluated with Atomic Force Microscopy, Spectroscopic Ellipsometry, Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. Contact pin-printing of overlapping probe spots is compared with hand spotted areas. Contact pin-printing resulted in two-fold increase of immobilized probe surface density as compared to hand spotting. Regarding BSA-TBZ immobilization, an incomplete monolayer develops into a bilayer as the concentration of BSA-TBZ molecules in the printing solution increases from 25 to 100 μg/mL. Upon blocking, however, a complete protein monolayer is formed for all the BSA-TBZ concentrations used. Free surface sites are filled with BSA for low surface coverage with BSA-TBZ, whereas loosely bound BSA-TBZ molecules are removed from the BSA-TBZ bilayer. As a consequence immunoreaction efficiency increases with the printing probe concentration.

  18. Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg (Germany)

    2011-03-15

    We present metal organic vapor phase epitaxy growth of semi-polar GaN structures on high index silicon surfaces. The crystallographic structure of GaN grown on Si(112), (115), and (117) substrates is investigated by X-ray analysis and scanning electron microscopy. X-ray diffraction was performed in Bragg Brentano geometry as well as pole figure measurements. The results demonstrate that the orientation of GaN crystallites on Si is significantly dependent on thickness of the AlN seeding layer and TMAl-flow rate. We observe that the crystallographic structures of GaN by applying thin AlN seeding layers grown with high TMAl-flow rate depend on Si surface direction while they are independent for thicker layers. By applying such seeding layer we obtain single crystalline semi-polar GaN on Si(112), while GaN structures grown with the same growth parameters on Si(117) show four components of GaN(0002). (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2014-06-01

    We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

  20. Contact pin-printing of albumin-fungicide conjugate for silicon nitride-based sensors biofunctionalization: Multi-technique surface analysis for optimum immunoassay performance

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: katarzyna.gajos@doctoral.uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Tsialla, Zoi; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil; Dąbczyński, Paweł [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece)

    2017-07-15

    Highlights: • Contact pin-printing of overlapping probe spots and spotting by hand are compared. • Contact pin-printing favors probe immobilization with two-fold higher surface density. • Incomplete monolayer develops to bilayer as printing solution concentration increases. • Blocking molecules complete probe monolayer but reduce probe bilayer. • Surface immunoreaction increases with probe concentration in printing solution. - Abstract: Mass fabrication of integrated biosensors on silicon chips is facilitated by contact pin-printing, applied for biofunctionalization of individual Si{sub 3}N{sub 4}-based transducers at wafer-scale. To optimize the biofunctionalization for immunochemical (competitive) detection of fungicide thiabendazole (TBZ), Si{sub 3}N{sub 4} surfaces are modified with (3-aminopropyl)triethoxysilane and examined after: immobilization of BSA-TBZ conjugate (probe) from solutions with different concentration, blocking with bovine serum albumin (BSA), and immunoreaction with a mouse monoclonal antibody against TBZ. Nanostructure, surface density, probe composition and coverage uniformity of protein layers are evaluated with Atomic Force Microscopy, Spectroscopic Ellipsometry, Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. Contact pin-printing of overlapping probe spots is compared with hand spotted areas. Contact pin-printing resulted in two-fold increase of immobilized probe surface density as compared to hand spotting. Regarding BSA-TBZ immobilization, an incomplete monolayer develops into a bilayer as the concentration of BSA-TBZ molecules in the printing solution increases from 25 to 100 μg/mL. Upon blocking, however, a complete protein monolayer is formed for all the BSA-TBZ concentrations used. Free surface sites are filled with BSA for low surface coverage with BSA-TBZ, whereas loosely bound BSA-TBZ molecules are removed from the BSA-TBZ bilayer. As a consequence immunoreaction efficiency

  1. Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

    Science.gov (United States)

    Chuang, Chen

    Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

  2. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  3. Public Transparency

    OpenAIRE

    UNCTAD; World Bank

    2018-01-01

    This note provides guidance on the type of information about agricultural investments that investors and governments can make publicly available. Transparency about certain aspects of investments can improve relations between investors and communities, enable external stakeholders to hold investors to commitments, and improve investors’ public image. Although some information should be kep...

  4. Transparency International

    NARCIS (Netherlands)

    Hulten, van M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the

  5. Color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1993-01-01

    The anomously large transmission of nucleons through a nucleus following a hard collision is explored. This effect, known as color transparency, is believed to be a prediction of QCD. The necessary conditions for its occurrence and the effects that must be included a realistic calculation are discussed

  6. Color transparency

    International Nuclear Information System (INIS)

    Miller, G.A.

    1993-01-01

    Imagine shooting a beam of protons of high momentum P through an atomic nucleus. Usually the nuclear interactions prevent the particles from emerging with momentum ∼P. Further, the angular distribution of elastically scattered protons is close to the optical diffraction pattern produced by a black disk. Thus the nucleus acts as a black disk and is not transparent. However, certain high momentum transfer reactions in which a proton is knocked out of the nucleus may be completely different. Suppose that the high momentum transfer process leads to the formation of a small-size color singlet wavepacket that is ejected from the nucleus. The effects of gluons emitted by color singlet systems of closely separated quarks and gluons tend to cancel. Thus the wavepacket-nuclear interactions are suppressed, the nucleus becomes transparant and one says that color transparency CT occurs. The observation of CT also requires that the wavepacket not expand very much while it moves through the nucleus. Simple quantum mechanical formulations can assess this expansion. The creation of a small-sized wavepacket is expected in asymptotic perturbative effects. The author reviews the few experimental attempts to observe color transparency in nuclear (e,e'p) and (p,pp) reactions and interpret the data and their implications

  7. Gold film with gold nitride - A conductor but harder than gold

    International Nuclear Information System (INIS)

    Siller, L.; Peltekis, N.; Krishnamurthy, S.; Chao, Y.; Bull, S.J.; Hunt, M.R.C.

    2005-01-01

    The formation of surface nitrides on gold films is a particularly attractive proposition, addressing the need to produce harder, but still conductive, gold coatings which reduce wear but avoid the pollution associated with conventional additives. Here we report production of large area gold nitride films on silicon substrates, using reactive ion sputtering and plasma etching, without the need for ultrahigh vacuum. Nanoindentation data show that gold nitride films have a hardness ∼50% greater than that of pure gold. These results are important for large-scale applications of gold nitride in coatings and electronics

  8. Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

    Energy Technology Data Exchange (ETDEWEB)

    Kohli, P. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States) and Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)]. E-mail: puneet.kohli@sematech.org; Chakravarthi, S. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Jain, Amitabh [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Bu, H. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Mehrotra, M. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Dunham, S.T. [Department of Electrical Engineering, University of Washington, Seattle, WA 98195 (United States); Banerjee, S.K. [Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)

    2004-12-15

    A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries. We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.

  9. Gold-coated iron nanoparticles in transparent Si{sub 3}N{sub 4} matrix thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Marcos, J. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain); Cespedes, E. [Keele University, Institute for Science and Technology in Medicine, Guy Hilton Research Centre (United Kingdom); Jimenez-Villacorta, F. [Northeastern University, Department of Chemical Engineering (United States); Munoz-Martin, A. [Universidad Autonoma de Madrid, Centro de Microanalisis de Materiales (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain)

    2013-06-15

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si{sub 3}N{sub 4} system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si{sub 3}N{sub 4} multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  10. Graphene/semiconductor silicon modified BiFeO{sub 3}/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Surbhi; Medwal, Rohit, E-mail: rohitmedwal@gmail.com; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S., E-mail: rkatiyar@hpcf.upr.edu [Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2015-08-10

    We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

  11. Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    International Nuclear Information System (INIS)

    Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S.; Tomar, Monika; Gupta, Vinay

    2015-01-01

    We report photovoltaic response of highly transparent graphene/BiFe 0.95 Si 0.05 O 3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I SC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V OC  ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I SC of 0.63 mA and V OC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I SC and V OC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows

  12. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  13. A high-transparency, micro-patternable chip for X-ray diffraction analysis of microcrystals under native growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Murray, Thomas D. [University of California, Berkeley, CA 94720 (United States); Johns Hopkins University School of Medicine, Baltimore, MD 21205 (United States); Lyubimov, Artem Y. [Stanford University, Stanford, CA 94305 (United States); Ogata, Craig M. [Argonne National Laboratory, Argonne, IL 60439 (United States); Vo, Huy [Johns Hopkins University, Baltimore, MD 21205 (United States); Uervirojnangkoorn, Monarin; Brunger, Axel T., E-mail: brunger@stanford.edu [Stanford University, Stanford, CA 94305 (United States); Berger, James M., E-mail: brunger@stanford.edu [Johns Hopkins University School of Medicine, Baltimore, MD 21205 (United States); University of California, Berkeley, CA 94720 (United States)

    2015-09-26

    A highly X-ray-transparent, silicon nitride-based device has been designed and fabricated to harvest protein microcrystals for high-resolution X-ray diffraction data collection using microfocus beamlines and XFELs. Microcrystals present a significant impediment to the determination of macromolecular structures by X-ray diffraction methods. Although microfocus synchrotron beamlines and X-ray free-electron lasers (XFELs) can enable the collection of interpretable diffraction data from microcrystals, there is a need for efficient methods of harvesting small volumes (<2 µl) of microcrystals grown under common laboratory formats and delivering them to an X-ray beam source under native growth conditions. One approach that shows promise in overcoming the challenges intrinsic to microcrystal analysis is to pair so-called ‘fixed-target’ sample-delivery devices with microbeam-based X-ray diffraction methods. However, to record weak diffraction patterns it is necessary to fabricate devices from X-ray-transparent materials that minimize background scattering. Presented here is the design of a new micro-diffraction device consisting of three layers fabricated from silicon nitride, photoresist and polyimide film. The chip features low X-ray scattering and X-ray absorption properties, and uses a customizable blend of hydrophobic and hydrophilic surface patterns to help localize microcrystals to defined regions. Microcrystals in their native growth conditions can be loaded into the chips with a standard pipette, allowing data collection at room temperature. Diffraction data collected from hen egg-white lysozyme microcrystals (10–15 µm) loaded into the chips yielded a complete, high-resolution (<1.6 Å) data set sufficient to determine a high-quality structure by molecular replacement. The features of the chip allow the rapid and user-friendly analysis of microcrystals grown under virtually any laboratory format at microfocus synchrotron beamlines and XFELs.

  14. A high-transparency, micro-patternable chip for X-ray diffraction analysis of microcrystals under native growth conditions

    International Nuclear Information System (INIS)

    Murray, Thomas D.; Lyubimov, Artem Y.; Ogata, Craig M.; Vo, Huy; Uervirojnangkoorn, Monarin; Brunger, Axel T.; Berger, James M.

    2015-01-01

    A highly X-ray-transparent, silicon nitride-based device has been designed and fabricated to harvest protein microcrystals for high-resolution X-ray diffraction data collection using microfocus beamlines and XFELs. Microcrystals present a significant impediment to the determination of macromolecular structures by X-ray diffraction methods. Although microfocus synchrotron beamlines and X-ray free-electron lasers (XFELs) can enable the collection of interpretable diffraction data from microcrystals, there is a need for efficient methods of harvesting small volumes (<2 µl) of microcrystals grown under common laboratory formats and delivering them to an X-ray beam source under native growth conditions. One approach that shows promise in overcoming the challenges intrinsic to microcrystal analysis is to pair so-called ‘fixed-target’ sample-delivery devices with microbeam-based X-ray diffraction methods. However, to record weak diffraction patterns it is necessary to fabricate devices from X-ray-transparent materials that minimize background scattering. Presented here is the design of a new micro-diffraction device consisting of three layers fabricated from silicon nitride, photoresist and polyimide film. The chip features low X-ray scattering and X-ray absorption properties, and uses a customizable blend of hydrophobic and hydrophilic surface patterns to help localize microcrystals to defined regions. Microcrystals in their native growth conditions can be loaded into the chips with a standard pipette, allowing data collection at room temperature. Diffraction data collected from hen egg-white lysozyme microcrystals (10–15 µm) loaded into the chips yielded a complete, high-resolution (<1.6 Å) data set sufficient to determine a high-quality structure by molecular replacement. The features of the chip allow the rapid and user-friendly analysis of microcrystals grown under virtually any laboratory format at microfocus synchrotron beamlines and XFELs

  15. High efficiency nitride based phosphores for white LEDs

    NARCIS (Netherlands)

    Li, Yuan Qiang; Hintzen, H.T.J.M.

    2008-01-01

    In this overview paper, novel rare-earth doped silicon nitride based phosphors for white LEDs applications have been demonstrated. The luminescence properties of orange-red-emitting phosphors (M2Si5N8:Eu2+) and green-to-yellow emitting phosphors (MSi2N2O2:Eu2+, M = Ca, Sr, Ba) are discussed in

  16. Effect of microstructure on the high temperature strength of nitride

    Indian Academy of Sciences (India)

    Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

  17. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  18. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  19. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  20. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, 1 May 1991--30 April 1992

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

    1993-04-01

    This report describes work to improve the performance of solar cells by improving the electrical and optical properties of their transparent conducting oxides (TCO) layers. Boron-doped zinc-oxide films were deposited by atmospheric pressure chemical vapor deposition in a laminar-flow reactor from diethyl zinc, tert-butanol, and diborane in the temperature range between 300{degrees}C and 420{degrees}C. When the deposition temperature was above 320{degrees}C, both doped and undoped films have highly oriented crystallites with their c-axes perpendicular to the substrate plane. Films deposited from 0.07% diethyl zinc and 2.4% tert-butanol have electron densities between 3.5 {times} 10{sup 20} cm{sup {minus}3} and 5.5 {times} 10{sup 20} cm{sup {minus}3}, conductivities between 250 {Omega}{sup {minus}1} and 2500 {Omega}{sup {minus}1} and mobilities between 2.5 cm{sup 2}/V-s and 35.0 cm{sup 2}/V-s, depending on dopant concentration, film thickness, and deposition temperature. Optical measurements show that the maximum infrared reflectance of the doped films is close to 90%, compared to about 20% for undoped films. Film visible absorption and film conductivity were found to increase with film thickness. The ratio of conductivity to visible absorption coefficient for doped films was between 0.1 {Omega} and 1.1 {Omega}{sup {minus}1}. The band gap of the film changes from 3.3 eV to 3.7 eV when the film is doped with 0.012% diborane.

  1. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  2. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  3. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Guler Urcan

    2015-01-01

    Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

  4. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  5. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  6. Thermal shock investigation of silicon nitride

    International Nuclear Information System (INIS)

    Ziegler, G.; Leucht, R.

    1977-01-01

    In this work, the thermal shock properties of commercial reaction-bonded Si 3 N 4 quality material (RBSN), of commercial hot-pressed Si 3 N 4 (HPSN) and of different laboratory grades of hot-pressed Si 3 N 4 were examined. The thermal shock properties of RBSN quality material differ according to the structure considerably: The critical temperature difference for sample crossections of 5 x 5 or 6 x 6 mm after quenching in oil lies between 730 0 C and over 1400 0 C. The best thermal shock properties are shown by high density RBSN quality material having very fine pores and high initial strength. The results indicate that for RBSN large pores and density inhomogenities are responsible for bad thermal shock properties. Resistance to fast temperature change is higher for hot-pressed Si 3 N 4 than for RBSN quality material. In HPSN, the thermal shock results show dependence on structure. High MgO content and the associated coarse rod-shaped configuration of the β phase and structural inhomogenities affect the thermal shock properties in an adverse way. (orig.) [de

  7. Dispersion toughened silicon carbon ceramics

    Science.gov (United States)

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  8. Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

    NARCIS (Netherlands)

    Fazal, I.; Berenschot, Johan W.; de Boer, J.H.; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2005-01-01

    The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing

  9. Analysis of the properties of silicon nitride based ceramic (Si{sub 3}N{sub 4}) cutting tool using different addictive; Analise das propriedades de ferramenta de corte ceramicas de nitreto de silicio (Si{sub 3}N{sub 4}) usando diferentes aditivos

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Silva, Oliverio Macedo Moreira [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil)

    2013-06-15

    The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si{sub 3}N{sub 4}) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si{sub 3}N{sub 4}) using different additives such as Y{sub 2}O{sub 3}, CeO{sub 2}, Al{sub 2}O{sub 3} , and CTR{sub 2}O{sub 3} in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m{sup 1/2}. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)

  10. Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

    Science.gov (United States)

    Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

    2016-04-26

    An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

  11. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  12. The failure of aluminium nitride under shock

    International Nuclear Information System (INIS)

    Pickup, I.M.; Bourne, N.K.

    2002-01-01

    The shear strength of aluminium nitride has been measured over a range of impact stresses by measuring lateral stresses in plate impact experiments. The range of impact stress spanned several key shock thresholds for the material, pre and post Hugoniot elastic limit and up to values where the hexagonal to cubic phase transition starts. The shear strength measurements indicate significant inelastic damage at stress levels in excess of the HEL, but a significant recovery of strength at the highest impact stress was observed. This stress equates to the phase transition stress. The shear strength behaviour is compared to that of silicon carbide, which does not exhibit a phase change at these impact velocities

  13. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    Energy Technology Data Exchange (ETDEWEB)

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  14. Semipolar III-nitride laser diodes with zinc oxide cladding.

    Science.gov (United States)

    Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

    2017-07-24

    Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

  15. Aerospace Transparency Research Compendium

    National Research Council Canada - National Science Library

    Pinkus, Alan

    2003-01-01

    ... (ARRL), located at Wright-Patterson AFB OH, has advanced aerospace transparency technology through the investigative research of numerous optical and visual parameters inherent in aerospace transparencies...

  16. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  17. Oxidation kinetics of CVD silicon carbide and silicon nitride

    Science.gov (United States)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  18. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  19. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  20. Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

    Science.gov (United States)

    Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

    2017-12-01

    A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

  1. Effect of boron nitride coating on fiber-matrix interactions

    International Nuclear Information System (INIS)

    Singh, R.N.; Brun, M.K.

    1987-01-01

    Coatings can modify fiber-matrix reactions and consequently interfacial bond strengths. Commercially available mullite, silicon carbide, and carbon fibers were coated with boron nitride via low pressure chemical vapor deposition and incorporated into a mullite matrix by hot-pressing. The influence of fiber-matrix interactions for uncoated fibers on fracture morphologies was studied. These observations are related to the measured values of interfacial shear strengths

  2. Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

    International Nuclear Information System (INIS)

    Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

    2008-01-01

    Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

  3. Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel

    Directory of Open Access Journals (Sweden)

    Naiming Lin

    2016-10-01

    Full Text Available Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316, surface-textured 316 (ST-316, and duplex-treated 316 (DT-316 in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si3N4 balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication.

  4. Chemical-vapor-infiltrated silicon nitride, boron nitride, and silicon carbide matrix composites

    International Nuclear Information System (INIS)

    Ventri, R.D.; Galasso, F.S.

    1990-01-01

    This paper reports composites of carbon/chemical-vapor-deposited (CVD) Si 3 N 4 , carbon/CVD BN, mullite/CVD SiC, and SiC yarn/CVD SiC prepared to determine if there were inherent toughness in these systems. The matrices were deposited at high enough temperatures to ensure that they were crystalline, which should make them more stable at high temperatures. The fiber-matrix bonding in the C/Si 3 N 4 composite appeared to be too strong; the layers of BN in the matrix of the C/BN were too weakly bonded; and the mullite/SiC composite was not as tough as the SiC/SiC composites. Only the SiC yarn/CVD SiC composite exhibited both strength and toughness

  5. Transparent oxide electronics from materials to devices

    CERN Document Server

    Martins, Rodrigo; Barquinha, Pedro; Pereira, Luis

    2012-01-01

    Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at lo

  6. Transparency and product variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    2009-01-01

    We study long run effects of transparency on the consumer side in a differentiated market. Only some consumers know prices. Increasing transparency reduces the equilibrium price, profit and firm entry. This improves welfare and, in most cases, average consumer utility....

  7. Optimal Central Bank Transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  8. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  9. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2010-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  10. Transparency and Product Variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    We study the long run e¤ects of transparency in a circular town model of a differentiated market. The market is not fully transparent on the consumer side: A fraction of consumers are uninformed about prices. Increasing transparency reduces the equilibrium price, profit and entry of firms. This i...

  11. Transparency in Health Programmes

    OpenAIRE

    Vian, Taryn

    2008-01-01

    Transparency is an important tool for good governance, helping to expose abusive practices including fraud, patronage, corruption, and other abuses of power. Increasing transparency can also enhance accountability by providing performance management information and exposing policies and procedures to oversight. This U4 Brief discusses the role of transparency in preventing corruption in the health sector.

  12. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    voluntarism. I argue that transparency to factual questions occurs in practical deliberation in ways parallel to transparency in doxastic deliberation. I argue that this should make us reconsider the appeal to transparency in arguments against doxastic voluntarism, and the wider issue of distinguishing...... theoretical from practical rationality....

  13. Innovative transparent armour concepts

    NARCIS (Netherlands)

    Carton, E.P.; Broos, J.P.F.

    2011-01-01

    Ever since WWII transparent armour consists of a multi-layer of glass panels bonded by thin polymer bond-films using an autoclave process. TNO has worked on the development of innovative transparent armour concepts that are lighter and a have better multi-hit capacity. Two new transparent armour

  14. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  15. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  16. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  17. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  18. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  19. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  20. The art of transparency.

    Science.gov (United States)

    Sayim, Bilge; Cavanagh, Patrick

    2011-01-01

    Artists throughout the ages have discovered a number of techniques to depict transparency. With only a few exceptions, these techniques follow closely the properties of physical transparency. The two best known properties are X-junctions and the luminance relations described by Metelli. X-junctions are seen where the contours of a transparent material cross contours of the surface behind; Metelli's constraints on the luminance relations between the direct and filtered portions of the surface specify a range of luminance values that are consistent with transparency. These principles have been used by artists since the time of ancient Egypt. However, artists also discovered that stimuli can be seen as transparent even when these physical constraints are not met. Ancient Greek artists, for example, were able to depict transparent materials in simple black-and-white line drawings. Artists also learned how to represent transparency in cases where neither X-junctions nor Metelli's constraints could apply: for example, where no portions of the objects behind the transparent material extend beyond it. Many painters convincingly portrayed transparency in these cases by depicting the effects the transparent medium would have on material or object properties. Here, we show how artists employed these and other techniques revealing their anticipation of current formalizations of perceived transparency, and we suggest new, as-yet-untested principles.

  1. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    2015-01-01

    organizational effectiveness and widened democratic practice. Yet, with its most common operationalization, as information, transparency reinstalls a 'purified' notion of communication devoid of mystery, inaccuracy, and (mis)representation. We apply transparency to itself by unpacking its implicit model......The current emphasis on organizational transparency signifies a growing demand for insight, clarity, accountability, and participation. Holding the promise of improved access to valid and trustworthy knowledge about organizations, the transparency pursuit has great potential for enhanced...... of communication and critiquing its obliviousness to the representative nature of transparency-related messages and the attendant complexities of motivation. This critique interrogates the ambiguities and ambivalence of the transparency pursuit and demonstrates how the goals of organizational transparency...

  2. Boron nitride: A new photonic material

    International Nuclear Information System (INIS)

    Chubarov, M.; Pedersen, H.; Högberg, H.; Filippov, S.; Engelbrecht, J.A.A.; O'Connel, J.; Henry, A.

    2014-01-01

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  3. Boron nitride: A new photonic material

    Energy Technology Data Exchange (ETDEWEB)

    Chubarov, M., E-mail: mihcu@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Pedersen, H., E-mail: henke@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Högberg, H., E-mail: hanho@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Filippov, S., E-mail: stafi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); O' Connel, J., E-mail: jacques.oconnell@gmail.com [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Henry, A., E-mail: anne.henry@liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-04-15

    Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp{sup 2}-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

  4. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie; Dré on, Julie; Rucavado, Esteban; Mews, Mathias; Koida, Takashi; Boccard, Mathieu; Werner, Jé ré mie; Geissbü hler, Jonas; Lö per, Philipp; Morales-Masis, Monica; Korte, Lars; De Wolf, Stefaan; Balllif, Christophe

    2018-01-01

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient

  5. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  6. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  7. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  8. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  9. Transparency in Organizing

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa

    This dissertation provides a critical analysis of transparency in the context of organizing. The empirical material is based on qualitative studies of international cooperative organizations. The dissertation seeks to contribute to transparency and organizing scholarship by adopting a communication...... centred approach to explore the implications of pursuing ideals of transparency in organizational relationships. The dissertation is comprised of four papers each contributing to extant debates in organizational studies and transparency literature. The findings indicate that transparency, in contrast...... to being a solution for efficiency and democratic organizing, is a communicatively contested process which may lead to unintended consequences. The dissertation shows that transparency is performative: it can impact authority by de/legitimating action, shape the processes of organizational identity co...

  10. Transparency views by media

    International Nuclear Information System (INIS)

    Ikawa, Y.

    2007-01-01

    In this presentation, various problems surrounding the issues of transparency, such as 'What exactly should be transparent?' 'Is all that we want amounting only to transparency?' 'Is it possible to thoroughly implement transparency', etc., are discussed with due consideration for the viewpoints of the wide range of parties concerned involving areas of politics, administration, enterprises, media, individuals, and so on. First of all, the explanation is focused on how the transparency is recognised, as well as how it is regarded as important, for the public at large and the media. Then, based on the concept that transparency is required for what cannot be justified to be secret, we will contemplate what should be transparent in the areas of politics, administration and enterprises, using the case of nuclear issues as example. Next, the discussion will proceed to the point whether the achievement of transparency itself should be the ultimate goal, in the light of taking into consideration the standpoints of individuals and the receivers of the information, in addition to that of the administration, politics, and enterprises. In closing, we will discuss what the necessary measures will be to materialize the complete transparency on the basis of the discussions made thus far. (author)

  11. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  12. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  13. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  14. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  15. A phototactic micromotor based on platinum nanoparticle decorated carbon nitride.

    Science.gov (United States)

    Ye, Zhenrong; Sun, Yunyu; Zhang, Hui; Song, Bo; Dong, Bin

    2017-11-30

    In this paper, we report a unique phototactic (both positive and negative) micromotor based on platinum nanoparticle decorated carbon nitride. The phototaxis relies on the self-diffusiophoretic mechanism and different surface modifications. The micromotor reported in the current study does not require the addition of any external fuels and shows versatile motion behaviour, i.e. start, stop, directional and programmable motion, which is controlled by light. In addition, since the actuation of the precipitated micromotors at the bottom of a solution using light results in the opacity changes from transparent to translucent, we anticipate that the current micromotor may have potential application in the field of smart windows.

  16. Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Stegmaier, M.; Ebert, J.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany); Meckbach, J. M.; Ilin, K.; Siegel, M. [Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

    2014-03-03

    Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

  17. Transparency of Banking Supervisors

    NARCIS (Netherlands)

    Liedorp, Franka; Mosch, Robert; van der Cruijsen, Carin; de Haan, Jakob

    Following Eijffinger and Geraats (2006), this paper constructs an index of transparency of banking supervisors that takes political, economic, procedural, policy, and operational transparency into account. Based on a survey, the index is constructed for 24 banking supervisors. The average score is

  18. Epilogue: degrees of transparency

    NARCIS (Netherlands)

    Hengeveld, K.

    2011-01-01

    In this epilogue the results of the analyses of four different languages in the preceding papers are compared. It is shown that the degrees of transparency of these languages can be represented on an implicational scale, and that the features themselves can be ranked on a transparency scale as well.

  19. On color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1989-10-01

    A quantum mechanical treatment of high momentum transfer nuclear processes is presented. Color transparency, the suppression of initial and final state interaction effects, is shown to arise from using the closure approximation. New conditions for the appearance of color transparency are derived

  20. Understanding modern transparency

    NARCIS (Netherlands)

    Meijer, A.J.|info:eu-repo/dai/nl/172436729

    2009-01-01

    Proponents and opponents fiercely debate whether computer-mediated transparency has a positive effect on trust in the public sector. This article enhances our understanding of transparency by presenting three perspectives: a premodern, modern and post-modern perspective, and analyzing the basic