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Sample records for transparent non-volatile memory

  1. ZnO as dielectric for optically transparent non-volatile memory

    International Nuclear Information System (INIS)

    Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

    2009-01-01

    This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

  2. Non-volatile memories

    CERN Document Server

    Lacaze, Pierre-Camille

    2014-01-01

    Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

  3. Emerging non-volatile memories

    CERN Document Server

    Hong, Seungbum; Wouters, Dirk

    2014-01-01

    This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

  4. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  5. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    International Nuclear Information System (INIS)

    Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

    2014-01-01

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

  6. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

    2017-01-01

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

  7. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  8. Method for refreshing a non-volatile memory

    Science.gov (United States)

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  9. Non Volatile Flash Memory Radiation Tests

    Science.gov (United States)

    Irom, Farokh; Nguyen, Duc N.; Allen, Greg

    2012-01-01

    Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

  10. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  11. Active non-volatile memory post-processing

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

    2017-04-11

    A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

  12. Novel applications of non-volatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Duthie, I

    1982-01-01

    The author reviews briefly the evolution of the programmable memory and the alternative technologies, before discussing the operation of a small EEPROM when used in conjunction with a microprocessor for typical applications. Some applications are reviewed and the opportunities which eeproms can offer for new applications are presented, together with the requirements for artificial intelligence to become a reality.

  13. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  14. Use of non-volatile memories for SSC detector readout

    International Nuclear Information System (INIS)

    Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

    1990-01-01

    Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

  15. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan

    2016-03-16

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  16. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

    2016-01-01

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  17. Bioorganic nanodots for non-volatile memory devices

    International Nuclear Information System (INIS)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-01-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

  18. Bioorganic nanodots for non-volatile memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  19. Highly Stretchable Non-volatile Nylon Thread Memory

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  20. A graphene-based non-volatile memory

    Science.gov (United States)

    Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

    2015-09-01

    We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

  1. Rad Hard Non Volatile Memory for FPGA BootLoading, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation-hardened non volatile memory (NVM) is needed to store the golden copy of the image(s) has not kept pace with the advances in FPGAs. Consider that a single...

  2. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

    2012-01-01

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

  3. Role of Non-Volatile Memories in Automotive and IoT Markets

    Science.gov (United States)

    2017-03-01

    Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

  4. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.

    2017-03-14

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  5. Low-power non-volatile spintronic memory: STT-RAM and beyond

    International Nuclear Information System (INIS)

    Wang, K L; Alzate, J G; Khalili Amiri, P

    2013-01-01

    The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

  6. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser

    2012-03-21

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Low-temperature process steps for realization of non-volatile memory devices

    NARCIS (Netherlands)

    Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

    2007-01-01

    In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

  8. High-performance non-volatile organic ferroelectric memory on banknotes.

    Science.gov (United States)

    Khan, M A; Bhansali, Unnat S; Alshareef, H N

    2012-04-24

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Physical principles and current status of emerging non-volatile solid state memories

    Science.gov (United States)

    Wang, L.; Yang, C.-H.; Wen, J.

    2015-07-01

    Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

  10. Overview of radiation effects on emerging non-volatile memory technologies

    Directory of Open Access Journals (Sweden)

    Fetahović Irfan S.

    2017-01-01

    Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

  11. Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

    Institute of Scientific and Technical Information of China (English)

    Young; Tea; Chun; Daping; Chu

    2015-01-01

    Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

  12. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  13. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  14. High-Speed Non-Volatile Optical Memory: Achievements and Challenges

    Directory of Open Access Journals (Sweden)

    Vadym Zayets

    2017-01-01

    Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

  15. A review of emerging non-volatile memory (NVM) technologies and applications

    Science.gov (United States)

    Chen, An

    2016-11-01

    This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

  16. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    Science.gov (United States)

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

  17. Metal-organic molecular device for non-volatile memory storage

    International Nuclear Information System (INIS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-01-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  18. Models for Total-Dose Radiation Effects in Non-Volatile Memory

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip Montgomery; Wix, Steven D.

    2017-04-01

    The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

  19. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

    International Nuclear Information System (INIS)

    Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

    2008-01-01

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

  20. Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

    International Nuclear Information System (INIS)

    Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

    2014-01-01

    Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

  1. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  2. A room-temperature non-volatile CNT-based molecular memory cell

    Science.gov (United States)

    Ye, Senbin; Jing, Qingshen; Han, Ray P. S.

    2013-04-01

    Recent experiments with a carbon nanotube (CNT) system confirmed that the innertube can oscillate back-and-forth even under a room-temperature excitation. This demonstration of relative motion suggests that it is now feasible to build a CNT-based molecular memory cell (MC), and the key to bring the concept to reality is the precision control of the moving tube for sustained and reliable read/write (RW) operations. Here, we show that by using a 2-section outertube design, we are able to suitably recalibrate the system energetics and obtain the designed performance characteristics of a MC. Further, the resulting energy modification enables the MC to operate as a non-volatile memory element at room temperatures. Our paper explores a fundamental understanding of a MC and its response at the molecular level to roadmap a novel approach in memory technologies that can be harnessed to overcome the miniaturization limit and memory volatility in memory technologies.

  3. Design exploration of emerging nano-scale non-volatile memory

    CERN Document Server

    Yu, Hao

    2014-01-01

    This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

  4. Non-volatile main memory management methods based on a file system.

    Science.gov (United States)

    Oikawa, Shuichi

    2014-01-01

    There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

  5. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Science.gov (United States)

    Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

    2017-05-01

    Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  6. A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-02-01

    Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

  7. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  8. Non-volatile memory devices with redox-active diruthenium molecular compound

    International Nuclear Information System (INIS)

    Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

    2016-01-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

  9. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung, E-mail: mskang@ssu.ac.kr [Department of Chemical Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)

    2015-02-09

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

  10. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    Science.gov (United States)

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  11. Origami-based tunable truss structures for non-volatile mechanical memory operation.

    Science.gov (United States)

    Yasuda, Hiromi; Tachi, Tomohiro; Lee, Mia; Yang, Jinkyu

    2017-10-17

    Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells-specifically triangulated cylindrical origami (TCO)-with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the operation of purely mechanical one- and two-bit memory storage prototypes.Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the operation of mechanical one- and two-bit memory storage.

  12. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  13. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Directory of Open Access Journals (Sweden)

    Fabrizio Riente

    2017-05-01

    Full Text Available Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  14. A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

    Energy Technology Data Exchange (ETDEWEB)

    De, Arup [Univ. of California, San Diego, CA (United States)

    2014-01-01

    Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

  15. Process Qualification Strategy for Advances Embedded Non Volatile Memory Technology : The Philips' 0.18um Embedded Flash Case

    NARCIS (Netherlands)

    Tao, Guoqiao; Scarpa, Andrea; van Dijk, Kitty; Kuper, Fred G.

    2003-01-01

    A qualification strategy for advanced embedded non-volatile memory technology has been revealed. This strategy consists of: a thorough understanding of the requirements, extensive use and frequent update of the FMEA (failure mode effect analysis), a qualification plan with excellent coverage of all

  16. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Science.gov (United States)

    Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-04-09

    As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

  17. Four-state non-volatile memory in a multiferroic spin filter tunnel junction

    Science.gov (United States)

    Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

    2016-12-01

    We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

  18. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    Science.gov (United States)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  19. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

    International Nuclear Information System (INIS)

    Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

    2010-01-01

    We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

  20. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

    Science.gov (United States)

    Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

    2018-01-01

    Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these

  1. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  2. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

    Science.gov (United States)

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-01

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

  3. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  4. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  5. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  6. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  7. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  8. Emerging Non-volatile Memory Technologies Exploration Flow for Processor Architecture

    OpenAIRE

    senni , sophiane; Torres , Lionel; Sassatelli , Gilles; Gamatié , Abdoulaye; Mussard , Bruno

    2015-01-01

    International audience; Most die area of today's systems-on-chips is occupied by memories. Hence, a significant proportion of total power is spent on memory systems. Moreover, since processing elements have to be fed with instructions and data from memories, memory plays a key role for system's performance. As a result, memories are a critical part of future embedded systems. Continuing CMOS scaling leads to manufacturing constraints and power consumption issues for the current three main mem...

  9. NVL-C: Static Analysis Techniques for Efficient, Correct Programming of Non-Volatile Main Memory Systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seyong [ORNL; Vetter, Jeffrey S [ORNL

    2016-01-01

    Computer architecture experts expect that non-volatile memory (NVM) hierarchies will play a more significant role in future systems including mobile, enterprise, and HPC architectures. With this expectation in mind, we present NVL-C: a novel programming system that facilitates the efficient and correct programming of NVM main memory systems. The NVL-C programming abstraction extends C with a small set of intuitive language features that target NVM main memory, and can be combined directly with traditional C memory model features for DRAM. We have designed these new features to enable compiler analyses and run-time checks that can improve performance and guard against a number of subtle programming errors, which, when left uncorrected, can corrupt NVM-stored data. Moreover, to enable recovery of data across application or system failures, these NVL-C features include a flexible directive for specifying NVM transactions. So that our implementation might be extended to other compiler front ends and languages, the majority of our compiler analyses are implemented in an extended version of LLVM's intermediate representation (LLVM IR). We evaluate NVL-C on a number of applications to show its flexibility, performance, and correctness.

  10. BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

    Energy Technology Data Exchange (ETDEWEB)

    Mudge, Trevor [Univ. of Michigan, Ann Arbor, MI (United States)

    2017-12-15

    This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in Exascale systems. Capacity and energy are the key drivers.

  11. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  12. Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

    Science.gov (United States)

    Katase, Takayoshi; Suzuki, Yuki; Ohta, Hiromichi

    2017-10-01

    The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO.7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20 V for a very long current-flowing-time (t) ˜40 min, primarily due to the low σ [2.0 × 10-8 S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the σ of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 × 10-8 S cm-1 to 2.5 × 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

  13. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  14. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  15. The microstructure investigation of GeTi thin film used for non-volatile memory

    International Nuclear Information System (INIS)

    Shen Jie; Liu Bo; Song Zhitang; Xu Cheng; Liang Shuang; Feng Songlin; Chen Bomy

    2008-01-01

    GeTi thin film has been found to have the reversible resistance switching property in our previous work. In this paper, the microstructure of this material with a given composition was investigated. The film was synthesized by magnetron sputtering and treated by the rapid temperature process. The results indicate a coexist status of amorphous and polycrystalline states in the as-deposited GeTi film, and the grains in the film are extremely fine. Furthermore, not until the film annealed at 600 deg. C, can the polycrystalline state be detected by X-ray diffraction. Based on the morphological analysis, the sputtered GeTi has the column growth tendency, and the column structure vanishes with the temperature increasing. The microstructure and thermal property analysis indicate that GeTi does not undergo evident phase change process during the annealing process, which makes the switching mechanism of GeTi different from that of chalcogenide memory material, the most widely used phase change memory material

  16. In-chip optical CD measurements for non-volatile memory devices

    Science.gov (United States)

    Vasconi, Mauro; Kremer, Stephanie; Polli, M.; Severgnini, Ermes; Trovati, Silvia S.

    2006-03-01

    A potential limitation to a wider usage of the scatterometry technique for CD evaluation comes from its requirement of dedicated regular measurement gratings, located in wafer scribe lanes. In fact, the simplification of the original chip layout that is often requested to design these gratings may impact on their printed dimension and shape. Etched gratings might also suffer from micro-loading effects other than in the circuit. For all these reasons, measurements collected therein may not represent the real behavior of the device. On the other hand, memory devices come with large sectors that usually possess the characteristics required for a proper scatterometry evaluation. In particular, for a leading edge flash process this approach is in principle feasible for the most critical process steps. The impact of potential drawbacks, mainly lack of pattern regularity within the tool probe area, is investigated. More, a very large sampling plan on features with equal nominal CD and density spread over the same exposure shot becomes feasible, thus yielding a deeper insight of the overall lithographic process window and a quantitative method to evaluate process equipment performance along time by comparison to acceptance data and/or last preventive maintenance. All the results gathered in the device main array are compared to those collected in standard scatterometry targets, tailored to the characteristics of the considered layers in terms of designed CD, pitch, stack and orientation.

  17. In search of the next memory inside the circuitry from the oldest to the emerging non-volatile memories

    CERN Document Server

    Campardo, Giovanni

    2017-01-01

    This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the...

  18. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  19. Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

    Science.gov (United States)

    Gubicza, Agnes; Csontos, Miklós; Halbritter, András; Mihály, György

    2015-03-14

    The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

  20. Non-volatile nano-floating gate memory with Pt-Fe{sub 2}O{sub 3} composite nanoparticles and indium gallium zinc oxide channel

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Quanli [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Lee, Seung Chang; Baek, Yoon-Jae [Myongji University, Department of Materials Science and Engineering (Korea, Republic of); Lee, Hyun Ho [Myongji University, Department of Chemical Engineering (Korea, Republic of); Kang, Chi Jung [Myongji University, Department of Nano Science and Engineering (Korea, Republic of); Kim, Hyun-Mi; Kim, Ki-Bum [Seoul National University, Department of Materials Science and Engineering (Korea, Republic of); Yoon, Tae-Sik, E-mail: tsyoon@mju.ac.kr [Myongji University, Department of Nano Science and Engineering (Korea, Republic of)

    2013-02-15

    Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe{sub 2}O{sub 3} composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe{sub 2}O{sub 3} nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of {approx}3 Multiplication-Sign 10{sup 11} cm{sup -2} by a solution-based dip-coating process. The Pt core ({approx}3 nm in diameter) and Fe{sub 2}O{sub 3}-shell ({approx}6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of {approx}4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of {approx}0.66 V after pulse programming at +20 V for 1 s with retention > {approx}65 % after 10{sup 4} s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

  1. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    International Nuclear Information System (INIS)

    Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

    2015-01-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

  2. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Science.gov (United States)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-05-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  3. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Energy Technology Data Exchange (ETDEWEB)

    Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Beigne, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  4. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    International Nuclear Information System (INIS)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-01-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes

  5. Laser Nanosoldering of Golden and Magnetite Particles and its Possible Application in 3D Printing Devices and Four-Valued Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Jaworski Jacek

    2015-12-01

    Full Text Available In recent years the 3D printing methods have been developing rapidly. This article presents researches about a new composite consisted of golden and magnetite nanoparticles which could be used for this technique. Preparation of golden nanoparticles by laser ablation and their soldering by laser green light irradiation proceeded in water environment. Magnetite was obtained on chemical way. During experiments it was tested a change of a size of nanoparticles during laser irradiation, surface plasmon resonance, zeta potential. The obtained golden - magnetite composite material was magnetic after laser irradiation. On the end there was considered the application it for 3D printing devices, water filters and four-valued non-volatile memories.

  6. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  7. A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

    OpenAIRE

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

  8. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  9. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  10. A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices

    Science.gov (United States)

    Alotaibi, Sattam; Nama Manjunatha, Krishna; Paul, Shashi

    2017-12-01

    Flexible Semi-Transparent electronic memory would be useful in coming years for integrated flexible transparent electronic devices. However, attaining such flexibility and semi-transparency leads to the boundaries in material composition. Thus, impeding processing speed and device performance. In this work, we present the use of inorganic stable selenium nanoparticles (Se-NPs) as a storage element and hydrogenated amorphous carbon (a-C:H) as an insulating layer in two terminal non-volatile physically flexible and semi-transparent capacitive memory devices (2T-NMDs). Furthermore, a-C:H films can be deposited at very low temperature (industrial technique called Plasma Enhanced Chemical Vapour Deposition (PECVD) which is available in many existing fabrication labs. Self-assembled Se-NPs has several unique features including deposition at room temperature by simple vacuum thermal evaporation process without the need for further optimisation. This facilitates the fabrication of memory on a flexible substrate. Moreover, the memory behaviour of the Se-NPs was found to be more distinct than those of the semiconductor and metal nanostructures due to higher work function compared to the commonly used semiconductor and metal species. The memory behaviour was observed from the hysteresis of current-voltage (I-V) measurements while the two distinguishable electrical conductivity states (;0; and "1") were studied by current-time (I-t) measurements.

  11. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    Science.gov (United States)

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  12. Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories

    NARCIS (Netherlands)

    Breemen, A.J.J.M. van; Zaba, T.; Khikhlovskyi, V.; Michels, J.; Janssen, R.; Kemerink, M.; Gelinck, G.

    2015-01-01

    The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a

  13. An overview of Experimental Condensed Matter Physics in Argentina by 2014, and Oxides for Non Volatile Memory Devices: The MeMOSat Project

    Science.gov (United States)

    Levy, Pablo

    2015-03-01

    In the first part of my talk, I will describe the status of the experimental research in Condensed Matter Physics in Argentina, biased towards developments related to micro and nanotechnology. In the second part, I will describe the MeMOSat Project, a consortium aimed at producing non-volatile memory devices to work in aggressive environments, like those found in the aerospace and nuclear industries. Our devices rely on the Resistive Switching mechanism, which produces a permanent but reversible change in the electrical resistance across a metal-insulator-metal structure by means of a pulsed protocol of electrical stimuli. Our project is devoted to the study of Memory Mechanisms in Oxides (MeMO) in order to establish a technological platform that tests the Resistive RAM (ReRAM) technology for aerospace applications. A review of MeMOSat's activities is presented, covering the initial Proof of Concept in ceramic millimeter sized samples; the study of different oxide-metal couples including (LaPr)2/3Ca1/3MnO, La2/3Ca1/3MnO3, YBa2Cu3O7, TiO2, HfO2, MgO and CuO; and recent miniaturized arrays of micrometer sized devices controlled by in-house designed electronics, which were launched with the BugSat01 satellite in June2014 by the argentinian company Satellogic.

  14. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  15. Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hye-Jung; Wang, Gun-Uk; Kim, Dong-Yu; Hwang, Hyun-Sang; Lee, Tak-Hee

    2010-01-01

    The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

  16. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  17. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  18. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  19. Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

    2013-04-30

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

  20. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    International Nuclear Information System (INIS)

    Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

    2016-01-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

  1. Transparent resistive switching memory using aluminum oxide on a flexible substrate

    Science.gov (United States)

    Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

    2016-02-01

    Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

  2. Different importance of the volatile and non-volatile fractions of an olfactory signature for individual social recognition in rats versus mice and short-term versus long-term memory.

    Science.gov (United States)

    Noack, Julia; Richter, Karin; Laube, Gregor; Haghgoo, Hojjat Allah; Veh, Rüdiger W; Engelmann, Mario

    2010-11-01

    When tested in the olfactory cued social recognition/discrimination test, rats and mice differ in their retention of a recognition memory for a previously encountered conspecific juvenile: Rats are able to recognize a given juvenile for approximately 45 min only whereas mice show not only short-term, but also long-term recognition memory (≥ 24 h). Here we modified the social recognition/social discrimination procedure to investigate the neurobiological mechanism(s) underlying the species differences. We presented a conspecific juvenile repeatedly to the experimental subjects and monitored the investigation duration as a measure for recognition. Presentation of only the volatile fraction of the juvenile olfactory signature was sufficient for both short- and long-term recognition in mice but not rats. Applying additional volatile, mono-molecular odours to the "to be recognized" juveniles failed to affect short-term memory in both species, but interfered with long-term recognition in mice. Finally immunocytochemical analysis of c-Fos as a marker for cellular activation, revealed that juvenile exposure stimulated areas involved in the processing of olfactory signals in both the main and the accessory olfactory bulb in mice. In rats, we measured an increased c-Fos synthesis almost exclusively in cells of the accessory olfactory bulb. Our data suggest that the species difference in the retention of social recognition memory is based on differences in the processing of the volatile versus non-volatile fraction of the individuals' olfactory signature. The non-volatile fraction is sufficient for retaining a short-term social memory only. Long-term social memory - as observed in mice - requires a processing of both the volatile and non-volatile fractions of the olfactory signature. Copyright © 2010 Elsevier Inc. All rights reserved.

  3. Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

    International Nuclear Information System (INIS)

    Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-01-01

    Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 10 5 s) and promising great read durability (10 6 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices. (paper)

  4. Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

    Science.gov (United States)

    Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-08-01

    Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 105 s) and promising great read durability (106 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices.

  5. A Fully Transparent Resistive Memory for Harsh Environments

    KAUST Repository

    Yang, Po-Kang; Ho, Chih-Hsiang; Lien, Der-Hsien; Duran Retamal, Jose Ramon; Kang, Chen-Fang; Chen, Kuan-Ming; Huang, Teng-Han; Yu, Yueh-Chung; Wu, Chih-I; He, Jr-Hau

    2015-01-01

    A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec

  6. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

    International Nuclear Information System (INIS)

    Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

    2013-01-01

    This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

  7. Observing the amorphous-to-crystalline phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} non-volatile memory materials from ab initio molecular-dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Lee, T.H.; Elliott, S.R. [Department of Chemistry, University of Cambridge, Lensfield Road, CB2 1EW Cambridge (United Kingdom)

    2012-10-15

    Phase-change memory is a promising candidate for the next generation of non-volatile memory devices. This technology utilizes reversible phase transitions between amorphous and crystalline phases of a recording material, and has been successfully used in rewritable optical data storage, revealing its feasibility. In spite of the importance of understanding the nucleation and growth processes that play a critical role in the phase transition, this understanding is still incomplete. Here, we present observations of the early stages of crystallization in Ge{sub 2}Sb{sub 2}Te{sub 5} materials through ab initio molecular-dynamics simulations. Planar structures, including fourfold rings and planes, play an important role in the formation and growth of crystalline clusters in the amorphous matrix. At the same time, vacancies facilitate crystallization by providing space at the glass-crystalline interface for atomic diffusion, which results in fast crystal growth, as observed in simulations and experiments. The microscopic mechanism of crystallization presented here may deepen our understanding of the phase transition occurring in real devices, providing an opportunity to optimize the memory performance of phase-change materials. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    Science.gov (United States)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  9. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

    Science.gov (United States)

    Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

    2011-08-01

    Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

  10. Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

    International Nuclear Information System (INIS)

    Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2013-01-01

    We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle

  11. Memory in Nonlinear Ionization of Transparent Solids

    International Nuclear Information System (INIS)

    Rajeev, P. P.; Simova, E.; Hnatovsky, C.; Taylor, R. S.; Rayner, D. M.; Corkum, P. B.; Gertsvolf, M.; Bhardwaj, V. R.

    2006-01-01

    We demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO 2 the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant (∼20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics

  12. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  13. Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

    Science.gov (United States)

    Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

    2018-05-01

    Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

  14. Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

    Science.gov (United States)

    Kim, Seung-Tae; Cho, Won-Ju

    2018-01-01

    We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

  15. A Fully Transparent Resistive Memory for Harsh Environments

    KAUST Repository

    Yang, Po-Kang

    2015-10-12

    A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

  16. Phase change materials in non-volatile storage

    OpenAIRE

    Ielmini, Daniele; Lacaita, Andrea L.

    2011-01-01

    After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

  17. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  18. An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

    International Nuclear Information System (INIS)

    Ooi, P.C.; Aw, K.C.; Gao, W.; Razak, K.A.

    2013-01-01

    In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium–tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I–V) plot of the transparent and flexible device shows the presence of hysteresis. In an I–V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress. - Highlights: ► An optically transparent and mechanically flexible memory is presented. ► Electrical characteristics show reprogrammable memory similar to flash memory. ► Transport mechanisms are proposed and explained. ► Mechanical bending tests are conducted

  19. An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P.C. [Mechanical Engineering, The University of Auckland (New Zealand); Aw, K.C., E-mail: k.aw@auckland.ac.nz [Mechanical Engineering, The University of Auckland (New Zealand); Gao, W. [Chemical and Materials Engineering, The University of Auckland (New Zealand); Razak, K.A. [School of Materials and Mineral Resources Engineering, Universiti Sains (Malaysia); NanoBiotechnology Research and Innovation, INFORMM, Universiti Sains (Malaysia)

    2013-10-01

    In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium–tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I–V) plot of the transparent and flexible device shows the presence of hysteresis. In an I–V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress. - Highlights: ► An optically transparent and mechanically flexible memory is presented. ► Electrical characteristics show reprogrammable memory similar to flash memory. ► Transport mechanisms are proposed and explained. ► Mechanical bending tests are conducted.

  20. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...

  1. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  2. Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

    Science.gov (United States)

    Prakash, Ravi; Kaur, Davinder

    2018-05-01

    The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

  3. Transparent meta-analysis of prospective memory and aging.

    Directory of Open Access Journals (Sweden)

    Bob Uttl

    Full Text Available Prospective memory (ProM refers to our ability to become aware of a previously formed plan at the right time and place. After two decades of research on prospective memory and aging, narrative reviews and summaries have arrived at widely different conclusions. One view is that prospective memory shows large age declines, larger than age declines on retrospective memory (RetM. Another view is that prospective memory is an exception to age declines and remains invariant across the adult lifespan. The present meta-analysis of over twenty years of research settles this controversy. It shows that prospective memory declines with aging and that the magnitude of age decline varies by prospective memory subdomain (vigilance, prospective memory proper, habitual prospective memory as well as test setting (laboratory, natural. Moreover, this meta-analysis demonstrates that previous claims of no age declines in prospective memory are artifacts of methodological and conceptual issues afflicting prior research including widespread ceiling effects, low statistical power, age confounds, and failure to distinguish between various subdomains of prospective memory (e.g., vigilance and prospective memory proper.

  4. Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — Ionizing radiation in space can damage electronic equipment, corrupting data and even disabling computers. Radiation resistant (rad hard) strategies must be employed...

  5. Impacts of Co doping on ZnO transparent switching memory device characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Simanjuntak, Firman Mangasa; Wei, Kung-Hwa [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Prasad, Om Kumar [Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Panda, Debashis [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-05-02

    The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  6. Transparency

    NARCIS (Netherlands)

    Gupta, A.; Mason, M.

    2015-01-01

    Transparency, as information disclosure, is becoming a widely accepted norm and set of practices in global climate governance. Disclosure of climate-related information is mainly seen as a way to monitor and/or reward various actors’ climate mitigation actions, thereby contributing, at least in

  7. Transparency

    Science.gov (United States)

    LaFee, Scott

    2009-01-01

    Citizens now expect access to information, particularly from public institutions like local school districts. They demand input and accountability. Cultural and technological changes, such as the Internet, make it possible for districts to comply. Yet transparency--the easily seen and understood actions of a school district and the thinking behind…

  8. All ITO-based transparent resistive switching random access memory using oxygen doping method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2015-01-01

    Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

  9. Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one

    NARCIS (Netherlands)

    Widdershoven, Franciscus P.; Annema, Anne J.; Storms, Maurits M.N.; Pelgrom, Marcellinus J.M.; Pelgrom, Marcel J M

    2001-01-01

    A non-volatile, random access memory cell comprises first and second inverters each having an output node cross-coupled by cross-coupling means to an input node of the other inverter for forming a MOS RAM cell. The output node of each inverter is selectively connected via the conductor paths of

  10. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  11. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N.; Alshareef, Husam N.

    2017-01-01

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  12. Precision of working memory for visual motion sequences and transparent motion surfaces.

    Science.gov (United States)

    Zokaei, Nahid; Gorgoraptis, Nikos; Bahrami, Bahador; Bays, Paul M; Husain, Masud

    2011-12-01

    Recent studies investigating working memory for location, color, and orientation support a dynamic resource model. We examined whether this might also apply to motion, using random dot kinematograms (RDKs) presented sequentially or simultaneously. Mean precision for motion direction declined as sequence length increased, with precision being lower for earlier RDKs. Two alternative models of working memory were compared specifically to distinguish between the contributions of different sources of error that corrupt memory (W. Zhang & S. J. Luck, 2008 vs. P. M. Bays, R. F. G. Catalao, & M. Husain, 2009). The latter provided a significantly better fit for the data, revealing that decrease in memory precision for earlier items is explained by an increase in interference from other items in a sequence rather than random guessing or a temporal decay of information. Misbinding feature attributes is an important source of error in working memory. Precision of memory for motion direction decreased when two RDKs were presented simultaneously as transparent surfaces, compared to sequential RDKs. However, precision was enhanced when one motion surface was prioritized, demonstrating that selective attention can improve recall precision. These results are consistent with a resource model that can be used as a general conceptual framework for understanding working memory across a range of visual features.

  13. Reconfigurable Electronics and Non-Volatile Memory Research

    Science.gov (United States)

    2011-10-14

    October 2009. The films were etched off wafer pieces using a blend of sulfuric, nitric and hydrofluoric acids and diluted for analysis. Table 5...interactions. A weak peak is also seen around g = 1.98 which intensifies under light illumination. This peak can be assigned to the charge defects of base...evidence of amorphous/crystalline GST. It is not clear why significantly oxidized devices were capable of switching. Dr. Miotti theorized that

  14. Reconfigurable Electronics and Non-Volatile Memory Research

    Science.gov (United States)

    2015-11-10

    spectrophotometer tool uses film reflectance to calculate film thickness via a set of proprietary algorithms and a developed recipe for material type. The...tool can also be used to collect transmission spectra. Recipes must be developed for each film type (and stack) that is measured. Once the recipe has...Regner, J.K.; Balasubramanian, M; Cook , B.; Li, Y.; Kassayebetre, H. Sharma, A.; Baker, R.J.; Campbell, K.A., “Integration of IC Industry Feature

  15. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  16. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  17. Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

    Science.gov (United States)

    Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

    2012-09-01

    Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

  18. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  19. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  20. Non-volatile polarization switch of magnetic domain wall velocity

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

    2015-12-21

    Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

  1. Atmospheric fate of non volatile and ionizable compounds

    DEFF Research Database (Denmark)

    Franco, Antonio; Hauschild, Michael Zwicky; Jolliet, Olivier

    2011-01-01

    , and the parameters describing air–water partitioning (KAW and temperature) and ionization (pKa and pH) are the key parameters determining the potential for long range transport. Wet deposition is an important removal process, but its efficiency is limited, primarily by the duration of the dry period between...... simulations describing the uncertainty of substance and environmental input properties were run to evaluate the impact of atmospheric parameters, ionization and air–water (or air–ice) interface enrichment. The rate of degradation and the concentration of OH radicals, the duration of dry and wet periods...... precipitation events. Given the underlying model assumptions, the presence of clouds contributes to the higher persistence in the troposphere because of the capacity of cloud water to accumulate and transport non-volatile (e.g.2,4-D) and surface-active chemicals (e.g. PFOA). This limits the efficiency of wet...

  2. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2014-06-10

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  3. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso; Khan, M. A.; Alshareef, Husam N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  4. All-optical loadable and erasable memory cell design based on inversionless lasing and electromagnetically induced transparency effects

    International Nuclear Information System (INIS)

    Gholipour Verki, N; HajiBadali, A; Abbasian, K; Rostami, A

    2011-01-01

    A loadable and erasable all-optical memory cell is designed by using two coupled micro-ring resonators with electromagnetically induced transparency (EIT) and lasing without inversion (LWI). To read out stored data, an additional phase is introduced in the upper ring resonator due to EIT. To compensate the fibre loss, use is made of LWI. The EIT is induced by inserting Λ-type three level quantum dots in the right-hand half of the upper ring and LWI is implemented by inserted Y-type four level quantum dots in the left-hand half of both rings. This optical memory cell can operate at a low light power level corresponding to several photons.

  5. Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

    Science.gov (United States)

    Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

    2015-09-01

    Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

  6. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hee-Dong, E-mail: khd0708@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Yun, Min Ju [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Kim, Kyeong Heon [School of Electrical Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 163-701 (Korea, Republic of); Kim, Sungho, E-mail: sungho85.kim@sejong.ac.kr [Department of Electrical Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

    2016-08-05

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN{sub x}) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10{sup 3} in positive bias region and 5 × 10{sup 5} in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10{sup 4} s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10{sup 2} at 85 °C to ∼10{sup 3} at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN{sub x} films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN{sub x}-based RRAM cells have investigated. • Oxygen doping concentration within ZrN{sub x} is optimized using working pressure of sputter. • Long retention time were observed.

  7. Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho

    2016-01-01

    In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrN_x) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 10"3 in positive bias region and 5 × 10"5 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 10"4 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼10"2 at 85 °C to ∼10"3 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrN_x films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent O-doped ZrN_x-based RRAM cells have investigated. • Oxygen doping concentration within ZrN_x is optimized using working pressure of sputter. • Long retention time were observed.

  8. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

    2016-10-15

    This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

  9. Electric Field Tuning Non-volatile Magnetism in Half-Metallic Alloys Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructure

    Science.gov (United States)

    Dunzhu, Gesang; Wang, Fenglong; Zhou, Cai; Jiang, Changjun

    2018-03-01

    We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

  10. Transparent meta-analysis: does aging spare prospective memory with focal vs. non-focal cues?

    Directory of Open Access Journals (Sweden)

    Bob Uttl

    Full Text Available BACKGROUND: Prospective memory (ProM is the ability to become aware of a previously-formed plan at the right time and place. For over twenty years, researchers have been debating whether prospective memory declines with aging or whether it is spared by aging and, most recently, whether aging spares prospective memory with focal vs. non-focal cues. Two recent meta-analyses examining these claims did not include all relevant studies and ignored prevalent ceiling effects, age confounds, and did not distinguish between prospective memory subdomains (e.g., ProM proper, vigilance, habitual ProM (see Uttl, 2008, PLoS ONE. The present meta-analysis focuses on the following questions: Does prospective memory decline with aging? Does prospective memory with focal vs. non-focal cues decline with aging? Does the size of age-related declines with focal vs. non-focal cues vary across ProM subdomains? And are age-related declines in ProM smaller than age-related declines in retrospective memory? METHODS AND FINDINGS: A meta-analysis of event-cued ProM using data visualization and modeling, robust count methods, and conventional meta-analysis techniques revealed that first, the size of age-related declines in ProM with both focal and non-focal cues are large. Second, age-related declines in ProM with focal cues are larger in ProM proper and smaller in vigilance. Third, age-related declines in ProM proper with focal cues are as large as age-related declines in recall measures of retrospective memory. CONCLUSIONS: The results are consistent with Craik's (1983 proposal that age-related declines on ProM tasks are generally large, support the distinction between ProM proper vs. vigilance, and directly contradict widespread claims that ProM, with or without focal cues, is spared by aging.

  11. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  12. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  13. Mosaic: An Application-Transparent Hardware-Software Cooperative Memory Manager for GPUs

    OpenAIRE

    Ausavarungnirun, Rachata; Landgraf, Joshua; Miller, Vance; Ghose, Saugata; Gandhi, Jayneel; Rossbach, Christopher J.; Mutlu, Onur

    2018-01-01

    Modern GPUs face a trade-off on how the page size used for memory management affects address translation and demand paging. Support for multiple page sizes can help relax the page size trade-off so that address translation and demand paging optimizations work together synergistically. However, existing page coalescing and splintering policies require costly base page migrations that undermine the benefits multiple page sizes provide. In this paper, we observe that GPGPU applications present a...

  14. Enhanced non-volatile and updatable holography using a polymer composite system.

    Science.gov (United States)

    Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

    2012-03-12

    Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

  15. Hydrogen-peroxide-modified egg albumen for transparent and flexible resistive switching memory

    Science.gov (United States)

    Zhou, Guangdong; Yao, Yanqing; Lu, Zhisong; Yang, Xiude; Han, Juanjuan; Wang, Gang; Rao, Xi; Li, Ping; Liu, Qian; Song, Qunliang

    2017-10-01

    Egg albumen is modified by hydrogen peroxide with concentrations of 5%, 10%, 15% and 30% at room temperature. Compared with devices without modification, a memory cell of Ag/10% H2O2-egg albumen/indium tin oxide exhibits obviously enhanced resistive switching memory behavior with a resistance ratio of 104, self-healing switching endurance for 900 cycles and a prolonged retention time for a 104 s @ 200 mV reading voltage after being bent 103 times. The breakage of massive protein chains occurs followed by the recombination of new protein chain networks due to the oxidation of amidogen and the synthesis of disulfide during the hydrogen peroxide modifying egg albumen. Ions such as Fe3+, Na+, K+, which are surrounded by protein chains, are exposed to the outside of protein chains to generate a series of traps during the egg albumen degeneration process. According to the fitting results of the double logarithm I-V curves and the current-sensing atomic force microscopy (CS-AFM) images of the ON and OFF states, the charge transfer from one trap center to its neighboring trap center is responsible for the resistive switching memory phenomena. The results of our work indicate that hydrogen- peroxide-modified egg albumen could open up a new avenue of biomaterial application in nanoelectronic systems.

  16. WORKSHOP REPORT - CONSIDERATIONS FOR DEVELOPING LEACHING TEST METHODS FOR SEMI- AND NON-VOLATILE ORGANIC COMPOUNDS

    Science.gov (United States)

    The report provides a summary of the information exchange at a workshop on the potential for release of semi- or non-volatile organic constituents at contaminated sites where sub-surface treatment has been used to control migration, and from waste that is disposed or re-used. The...

  17. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    Science.gov (United States)

    Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

    2013-08-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

  18. Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

    International Nuclear Information System (INIS)

    Gogurla, Narendar; Mondal, Suvra P; Sinha, Arun K; Katiyar, Ajit K; Banerjee, Writam; Ray, Samit K; Kundu, Subhas C

    2013-01-01

    The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems. (paper)

  19. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Science.gov (United States)

    Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

    2016-07-01

    Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

  20. Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

    Directory of Open Access Journals (Sweden)

    Nikica Budimir

    2007-03-01

    Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

  1. Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

    Directory of Open Access Journals (Sweden)

    M. S. T. Barroso

    2011-06-01

    Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

  2. EqualChance: Addressing Intra-set Write Variation to Increase Lifetime of Non-volatile Caches

    Energy Technology Data Exchange (ETDEWEB)

    Mittal, Sparsh [ORNL; Vetter, Jeffrey S [ORNL

    2014-01-01

    To address the limitations of SRAM such as high-leakage and low-density, researchers have explored use of non-volatile memory (NVM) devices, such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches. A crucial limitation of NVMs, however, is that their write endurance is low and the large intra-set write variation introduced by existing cache management policies may further exacerbate this problem, thereby reducing the cache lifetime significantly. We present EqualChance, a technique to increase cache lifetime by reducing intra-set write variation. EqualChance works by periodically changing the physical cache-block location of a write-intensive data item within a set to achieve wear-leveling. Simulations using workloads from SPEC CPU2006 suite and HPC (high-performance computing) field show that EqualChance improves the cache lifetime by 4.29X. Also, its implementation overhead is small, and it incurs very small performance and energy loss.

  3. Integrating Two-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The space radiation environment presents a significant hazard to the critical electronic components used in a variety of space applications. Many such applications...

  4. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

  5. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  6. Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

    Science.gov (United States)

    2017-03-06

    WP-201317) Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-volatile Particulate Matter (PM... Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions 6. AUTHOR(S) E. Corporan, M. DeWitt, C. Klingshirn, M.D. Cheng, R. Miake-Lye, J. Peck...the performance and viability of two devices to condition aircraft turbine engine exhaust to allow the accurate measurement of total (volatile and non

  7. Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

    International Nuclear Information System (INIS)

    Chen, Zhendong; Gao, Cunxu; Wei, Yanping; Zhang, Peng; Wang, Yutian; Zhang, Chao; Ma, Zhikun

    2017-01-01

    Electric-field control of magnetism is now an attractive trend to approach a new kind of fast, low-power-cost memory device. In this work, we report a strong non-volatile electric control of magnetism in an Fe–Al/Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 heterostructure. In this system, a 90° rotation of the in-plane uniaxial magnetic anisotropy is exhibited during the increase of the external electric field, which means the easy axis turns into a hard axis and the hard axis turns into an easy one. Additionally, a non-volatile switch of the remanence is observed after a sweeping of the electric field from 0 kV cm −1 to  ±  10 kV cm −1 , then back to 0 kV cm −1 . More interestingly, a 20% non-volatile magnetic state tuning driven by individual pulse electric fields is shown in contrast to large tuning up to 120% caused by pulse electric fields with small assistant pulse magnetic fields, which means a 180° reverse of the magnetization. These remarkable behaviors demonstrated in this heterostructure reveal a promising potential application in magnetic memory devices mediated by electric fields. (paper)

  8. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    International Nuclear Information System (INIS)

    Kothapalli, A.; Sadler, G.

    2003-01-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 deg. C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.htmlref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.htmlpage1

  9. Characteristics of a non-volatile liquid propellant in liquid-fed ablative pulsed plasma thrusters

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-02-01

    In the past several decades, the use of electric propulsion in spacecraft has experienced tremendous growth. With the increasing adoption of small satellites in the kilogram range, suitable propulsion systems will be necessary in the near future. Pulsed plasma thrusters (PPTs) were the first form of electric propulsion to be deployed in orbit, and are highly suitable for small satellites due to their inherent simplicity. However, their lifetime is limited by disadvantages such as carbon deposition leading to thruster failure, and complicated feeding systems required due to the conventional use of solid propellants (usually polytetrafluoroethylene (PTFE)). A promising alternative to solid propellants has recently emerged in the form of non-volatile liquids that are stable in vacuum. This study presents a broad comparison of the non-volatile liquid perfluoropolyether (PFPE) and solid PTFE as propellants on a PPT with a common design base. We show that liquid PFPE can be successfully used as a propellant, and exhibits similar plasma discharge properties to conventional solid PTFE, but with a mass bit that is an order of magnitude higher for an identical ablation area. We also demonstrate that the liquid PFPE propellant has exceptional resistance to carbon deposition, completely negating one of the major causes of thruster failure, while solid PTFE exhibited considerable carbon build-up. Energy dispersive X-ray spectroscopy was used to examine the elemental compositions of the surface deposition on the electrodes and the ablation area of the propellant (or PFPE encapsulator). The results show that based on its physical characteristics and behavior, non-volatile liquid PFPE is an extremely promising propellant for use in PPTs, with an extensive scope available for future research and development.

  10. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    Science.gov (United States)

    Kothapalli, A.; Sadler, G.

    2003-08-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 °C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.html#ref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.html#page1].

  11. Emerging memory technologies design, architecture, and applications

    CERN Document Server

    2014-01-01

    This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to ex...

  12. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Directory of Open Access Journals (Sweden)

    H. H. Y. Cheung

    2016-07-01

    Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

  13. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids

    Directory of Open Access Journals (Sweden)

    Hongbin Lin

    2018-05-01

    Full Text Available Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC. Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln, glutamic acid (Glu, aspartic acid (Asp and asparagines (Asn were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  14. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids.

    Science.gov (United States)

    Lin, Hongbin; Yu, Xiaoyu; Fang, Jiaxing; Lu, Yunhao; Liu, Ping; Xing, Yage; Wang, Qin; Che, Zhenming; He, Qiang

    2018-05-29

    Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC). Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln), glutamic acid (Glu), aspartic acid (Asp) and asparagines (Asn) were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  15. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  16. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    deformation potentially leads to fatigue and fracture over time. Moreover, we show that by simply applying voltage pulses, a robust, non-volatile...polarization such as PZT , BiFeO3, or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  17. Dietary exposure to volatile and non-volatile N-nitrosamines from processed meat products in Denmark

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Christensen, Tue

    2015-01-01

    the carcinogenicity for the majority of the non-volatile NA (NVNA) remains to be elucidated. Danish adults (15–75 years) and children (4–6 years) consume 20 g and 16 g of processed meat per day (95th percentile), respectively. The consumption is primarily accounted for by sausages, salami, pork flank (spiced...

  18. Chemical composition and non-volatile components of three wild edible mushrooms collected from northwest Tunisia

    Directory of Open Access Journals (Sweden)

    ibtissem Kacem Jedidi

    2016-04-01

    Full Text Available In Tunisia, many people collect wild edible mushrooms as pickers for their own consumption. The present work aims at contributing to the determination of the chemical composition, non volatile components content (soluble sugars, free amino acids and minerals and trace elements of three popular Tunisian wild edible mushrooms species collected from the northwest of Tunisia (Agaricus campestris, Boletus edulis and Cantharellus cibarius.All investigated mushrooms revealed that these species are rich sources of proteins (123.70 – 374.10 g kg-1 dry weight (DW and carbohydrates (403.3 – 722.40 g kg-1 DW, and low content of fat (28.2 – 39.9 g kg-1 DW; the highest energetic contribution was guaranteed by C. cibarius (1542.71 kJ / 100 g. A. compestris (33.14 mg/g DW showed the highest concentration of essential amino acids. The composition in individual sugars was also determined, mannitol and trehalose being the most abundant sugars. C. cibarius revealed the highest concentrations of carbohydrates (722.4 g kg-1 DW and A. compestris the lowest concentration (403.3 g kg-1 DW. Potassium (K and sodium (Na are the most abundant minerals in analyzed samples (A. compestris showed the highest concentrations of K and Na, 49141.44 and 9263.886 µg/g DW respectively.

  19. Comparison of non-volatile umami components in chicken soup and chicken enzymatic hydrolysate.

    Science.gov (United States)

    Kong, Yan; Yang, Xiao; Ding, Qi; Zhang, Yu-Yu; Sun, Bao-Guo; Chen, Hai-Tao; Sun, Ying

    2017-12-01

    Umami taste is an important part to the taste of chicken. To isolate and identify non-volatile umami compounds, fractions from chicken soup and hydrolysate were prepared and analyzed. Amino acids were analyzed by amino acid analyzer. Organic acids and nucleotides were determined by ultra-performance liquid chromatography. Separation procedures utilizing ultrafiltration, Sephadex G-15 and reversed-phase high-performance liquid chromatography were used to isolate umami taste peptides. Combined with sensory evaluation and LC-Q-TOF-MS, the amino acid sequences of 12 oligopeptides were determined. The amount of taste compounds was higher in chicken enzymatic hydrolysate than that of chicken soup. Eight oligopeptides from chicken enzymatic hydrolysate were identified, including Ala-Asp, Ala-Met, His-Ser, Val-Glu, Ala-Glu, Asp-Ala-Gly, Glu-Asp and Ala-Glu-Ala. Four oligopeptides from chicken soup were identified, including Val-Thr, Ala-His, Ala-Phe and Thr-Glu. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Discharge characteristics of an ablative pulsed plasma thruster with non-volatile liquid propellant

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-07-01

    Pulsed plasma thrusters (PPTs) are a form of electric spacecraft propulsion. They have an extremely simple structure and are highly suitable for nano/micro-spacecraft with weights in the kilogram range. Such small spacecraft have recently experienced increased growth but still lack suitable efficient propulsion systems. PPTs operate in a pulsed mode (one discharge = one shot) and typically use solid polytetrafluoroethylene (PTFE) as a propellant. However, new non-volatile liquids in the perfluoropolyether (PFPE) family have recently been found to be promising alternatives. A recent study presented results on the physical characteristics of PFPE vs. PTFE, showing that PFPE is superior in terms of physical characteristics such as its resistance to carbon deposition. This letter will examine the electrical discharge characteristics of PFPE vs. PTFE. The results demonstrate that PFPE has excellent shot-to-shot repeatability and a lower discharge resistance when compared with PTFE. Taken together with its physical characteristics, PFPE appears to be a strong contender to PTFE as a PPT propellant.

  1. Investigations concerning the exchange of iodine from non-volatile organic iodine compounds

    International Nuclear Information System (INIS)

    Psarros, N.; Duschner, H.; Molzahn, D.; Schmidt, L.; Heise, S.; Jungclas, H.; Brandt, R.; Patzelt, P.

    1990-10-01

    The iodine produced by nuclear fission is removed during the reprocessing of exhausted nuclear fuel elements by desorption achieving good decontamination factors. Nevertheless the further optimization of the process requires detailed information about the iodine speciation during fuel reprocessing, and about possible reactions. For the study of decomposition reactions of iodo-alcanes, which are built up during the fuel recycling process, we developed a method for the synthesis of labelled iodo-dodecane, which was used as tracer. In order to identify the iodo species in the organic phase of the reprocessing cycle we applied plasma desorption time-of-flight mass spectroscopy. The problem of the volatility of the iodo-compounds in the ultra vacuum of the mass spectrometer was overcome by derivatization of the iodo-alcanes with dithizon, which yielded non-volatile ionic alcyltetrazolium iodides. Beta-spectrometric analysis of the exhaust condensates collected from the organic phase of the WAK reprocessing cycle revealed beside iodine-129 the existence of a low-energetic beta emitter, which has yet to be identified. A literature survey on the topic was also performed. (orig.) With 42 refs., 9 figs [de

  2. Analysis of the build-up of semi and non volatile organic compounds on urban roads.

    Science.gov (United States)

    Mahbub, Parvez; Ayoko, Godwin A; Goonetilleke, Ashantha; Egodawatta, Prasanna

    2011-04-01

    Vehicular traffic in urban areas may adversely affect urban water quality through the build-up of traffic generated semi and non volatile organic compounds (SVOCs and NVOCs) on road surfaces. The characterisation of the build-up processes is the key to developing mitigation measures for the removal of such pollutants from urban stormwater. An in-depth analysis of the build-up of SVOCs and NVOCs was undertaken in the Gold Coast region in Australia. Principal Component Analysis (PCA) and Multicriteria Decision tools such as PROMETHEE and GAIA were employed to understand the SVOC and NVOC build-up under combined traffic scenarios of low, moderate, and high traffic in different land uses. It was found that congestion in the commercial areas and use of lubricants and motor oils in the industrial areas were the main sources of SVOCs and NVOCs on urban roads, respectively. The contribution from residential areas to the build-up of such pollutants was hardly noticeable. It was also revealed through this investigation that the target SVOCs and NVOCs were mainly attached to particulate fractions of 75-300 μm whilst the redistribution of coarse fractions due to vehicle activity mainly occurred in the >300 μm size range. Lastly, under combined traffic scenario, moderate traffic with average daily traffic ranging from 2300 to 5900 and average congestion of 0.47 were found to dominate SVOC and NVOC build-up on roads. Copyright © 2011 Elsevier Ltd. All rights reserved.

  3. Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    2018-01-01

    with the sharing of information and the perceived quality of the information shared. This narrow focus on information and quality, however, overlooks the dynamics of organizational transparency. To provide a more structured conceptualization of organizational transparency, this article unpacks the assumptions......Transparency is an increasingly prominent area of research that offers valuable insights for organizational studies. However, conceptualizations of transparency are rarely subject to critical scrutiny and thus their relevance remains unclear. In most accounts, transparency is associated...... that shape the extant literature, with a focus on three dimensions: conceptualizations, conditions, and consequences. The contribution of the study is twofold: (a) On a conceptual level, we provide a framework that articulates two paradigmatic positions underpinning discussions of transparency, verifiability...

  4. TRANSPARENT CONCRETE

    OpenAIRE

    Sandeep Sharma*, Dr. O.P. Reddy

    2017-01-01

    Transparent concrete is the new type of concrete introduced in todays world which carries special property of light transmitting due to presence of light Optical fibres. Which is also known as translucent concrete or light transmitting concrete, it is achieved by replacing coarse aggregates with transparent alternate materials (Optical fibres). The binding material in transparent concrete may be able to transmit light by using clear resins the concrete mix. The concrete used in industry in pr...

  5. A high performance transparent resistive switching memory made from ZrO_2/AlON bilayer structure

    International Nuclear Information System (INIS)

    Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen; Lou, Jesse Jen-Chung

    2016-01-01

    In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO_2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO_2/ITO single layer device, the ITO/ZrO_2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO_2/AlON interface. Therefore, in the ITO/ZrO_2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

  6. A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lou, Jesse Jen-Chung [Department of Energy Information Engineering, School of Software and Microelectronics, Peking University, Wuxi 214125 (China)

    2016-04-11

    In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

  7. Studying the fate of non-volatile organic compounds in a commercial plasma air purifier

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Stefan [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Seiler, Cornelia; Gerecke, Andreas C. [Swiss Federal Laboratories for Material Science and Technology (EMPA), CH-8600 Dübendorf (Switzerland); Hächler, Herbert [University of Zürich, Institute for Food Safety and Hygiene, National Centre for Enteropathogenic Bacteria and Listeria (NENT), CH-8057 Zürich (Switzerland); Hilbi, Hubert [Ludwig-Maximilians-Universität München Max von Pettenkofer-Institut, D-80336 München (Germany); Frey, Joachim [University of Bern, Institute for Veterinary Bacteriology, CH-3001 Bern (Switzerland); Weidmann, Simon; Meier, Lukas; Berchtold, Christian [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Zenobi, Renato, E-mail: zenobi@org.chem.ethz.ch [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland)

    2013-07-15

    Highlights: • Degradation of environmental toxins, a protein, and bioparticles were studied. • A commercial air purifier based on a cold plasma was used. • Passage through the device reduced the concentration of the compounds/particles. • Deposition inside the plasma air purifier was the main removal process. -- Abstract: Degradation of non-volatile organic compounds–environmental toxins (methyltriclosane and phenanthrene), bovine serum albumin, as well as bioparticles (Legionella pneumophila, Bacillus subtilis, and Bacillus anthracis)–in a commercially available plasma air purifier based on a cold plasma was studied in detail, focusing on its efficiency and on the resulting degradation products. This system is capable of handling air flow velocities of up to 3.0 m s{sup −1} (3200 L min{sup −1}), much higher than other plasma-based reactors described in the literature, which generally are limited to air flow rates below 10 L min{sup −1}. Mass balance studies consistently indicated a reduction in concentration of the compounds/particles after passage through the plasma air purifier, 31% for phenanthrene, 17% for methyltriclosane, and 80% for bovine serum albumin. L. pneumophila did not survive passage through the plasma air purifier, and cell counts of aerosolized spores of B. subtilis and B. anthracis were reduced by 26- and 15-fold, depending on whether it was run at 10 Hz or 50 Hz, respectively. However rather than chemical degradation, deposition on the inner surfaces of the plasma air purifier occured. Our interpretation is that putative “degradation” efficiencies were largely due to electrostatic precipitation rather than to decomposition into smaller molecules.

  8. Color transparency

    International Nuclear Information System (INIS)

    Pire, B.; Ralston, J.P.

    1991-01-01

    This paper reviews the physics of color transparency and the unexpected energy dependence of recent measurements of high-energy fixed-angle elastic scattering in nuclear targets. The authors point out advantages of using transparency as a tool, introducing two concepts - spin and flavor flow filtering - that may be studied with nuclear targets. The special case of electroproduction is also considered

  9. Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

    Directory of Open Access Journals (Sweden)

    Krystyna Przybył

    2011-01-01

    Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

  10. Volatile and non-volatile compounds in green tea affected in harvesting time and their correlation to consumer preference.

    Science.gov (United States)

    Kim, Youngmok; Lee, Kwang-Geun; Kim, Mina K

    2016-10-01

    Current study was designed to find out how tea harvesting time affects the volatile and non-volatile compounds profiles of green tea. In addition, correlation of instrumental volatile and non-volatile compounds analyses to consumer perception were analyzed. Overall, earlier harvested green tea had stronger antioxidant capacity (~61.0%) due to the polyphenolic compounds from catechin (23,164 mg/L), in comparison to later harvested green teas (11,961 mg/L). However, high catechin content in green tea influenced negatively the consumer likings of green tea, due to high bitterness (27.6%) and astringency (13.4%). Volatile compounds drive consumer liking of green tea products were also identified, that included linalool, 2,3-methyl butanal, 2-heptanone, (E,E)-3,5-Octadien-2-one. Finding from current study are useful for green tea industry as it provide the difference in physiochemical properties of green tea harvested at different intervals.

  11. Volatile and non-volatile/semi-volatile compounds and in vitro bioactive properties of Chilean Ulmo (Eucryphia cordifolia Cav.) honey.

    Science.gov (United States)

    Acevedo, Francisca; Torres, Paulina; Oomah, B Dave; de Alencar, Severino Matias; Massarioli, Adna Prado; Martín-Venegas, Raquel; Albarral-Ávila, Vicenta; Burgos-Díaz, César; Ferrer, Ruth; Rubilar, Mónica

    2017-04-01

    Ulmo honey originating from Eucryphia cordifolia tree, known locally in the Araucania region as the Ulmo tree is a natural product with valuable nutritional and medicinal qualities. It has been used in the Mapuche culture to treat infections. This study aimed to identify the volatile and non-volatile/semi-volatile compounds of Ulmo honey and elucidate its in vitro biological properties by evaluating its antioxidant, antibacterial, antiproliferative and hemolytic properties and cytotoxicity in Caco-2 cells. Headspace volatiles of Ulmo honey were isolated by solid-phase microextraction (SPME); non-volatiles/semi-volatiles were obtained by removing all saccharides with acidified water and the compounds were identified by GC/MS analysis. Ulmo honey volatiles consisted of 50 compounds predominated by 20 flavor components. Two of the volatile compounds, lyrame and anethol have never been reported before as honey compounds. The non-volatile/semi-volatile components of Ulmo honey comprised 27 compounds including 13 benzene derivatives accounting 75% of the total peak area. Ulmo honey exhibited weak antioxidant activity but strong antibacterial activity particularly against gram-negative bacteria and methicillin-resistant Staphylococcus aureus (MRSA), the main strain involved in wounds and skin infections. At concentrations >0.5%, Ulmo honey reduced Caco-2 cell viability, released lactate dehydrogenase (LDH) and increased reactive oxygen species (ROS) production in a dose dependent manner in the presence of foetal bovine serum (FBS). The wide array of volatile and non-volatile/semi-volatile constituents of Ulmo honey rich in benzene derivatives may partly account for its strong antibacterial and antiproliferative properties important for its therapeutic use. Our results indicate that Ulmo honey can potentially inhibit cancer growth at least partly by modulating oxidative stress. Copyright © 2017 Elsevier Ltd. All rights reserved.

  12. Fabrication of transparent, tough, and conductive shape-memory polyurethane films by incorporating a small amount of high-quality graphene.

    Science.gov (United States)

    Jung, Yong Chae; Kim, Jin Hee; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2012-04-23

    We report a mechanically strong, electrically and thermally conductive, and optically transparent shape-memory polyurethane composite which was fabricated by introducing a small amount (0.1 wt%) of high-quality graphene as a filler. Geometrically large (≈4.6 μm(2)), but highly crystallized few-layer graphenes, verified by Raman spectroscopy and transmission electron microscopy, were prepared by the sonication of expandable graphite in an organic solvent. Oxygen- containing functional groups at the edge plane of graphene were crucial for an effective stress transfer from the graphene to polyurethane. Homogeneously dispersed few-layered graphene enabled polyurethane to have a high shape recovery force of 1.8 MPa cm(-3). Graphene, which is intrinsically stretchable up to 10%, will enable high-performance composites to be fabricated at relatively low cost and we thus envisage that such composites may replace carbon nanotubes for various applications in the near future. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Phase change memory

    CERN Document Server

    Qureshi, Moinuddin K

    2011-01-01

    As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t

  14. Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

    Science.gov (United States)

    Zand, Ramtin; DeMara, Ronald F.

    2017-12-01

    In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

  15. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  16. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dong Kyu; Zhang, Xixiang; Pey, Kin-Leong

    2011-01-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through

  17. Occurence and dietary exposure of volatile and non-volatile N-Nitrosamines in processed meat products

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Granby, Kit

    Nitrite and nitrate have for many decades been used for preservation of meat. However, nitrite can react with secondary amines in meat to form N-Nitrosamines (NAs), many of which have been shown to be genotoxic1 . The use of nitrite therefore ought to be limited as much as possible. To maintain...... a high level of consumer protection Denmark obtains National low limits of the nitrite use in meat products. An estimation of the dietary exposure to volatile NAs (VNA) and non-volatile NAs (NVNA) is necessary when performing a risk assessment of the use of nitrite and nitrate for meat preservation....

  18. Efficient Management for Hybrid Memory in Managed Language Runtime

    OpenAIRE

    Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

    2016-01-01

    Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

  19. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    KAUST Repository

    Mao, Duo

    2010-05-01

    The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

  20. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

    International Nuclear Information System (INIS)

    Hang-Bing, Lv; Peng, Zhou; Xiu-Feng, Fu; Ming, Yin; Ya-Li, Song; Li, Tang; Ting-Ao, Tang; Yin-Yin, Lin

    2008-01-01

    Resistive switching characteristics of Cu x O films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current–voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating

  1. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    KAUST Repository

    Mao, Duo; Quevedo-Ló pez, Manuel Angel Quevedo; Stiegler, Harvey J.; Gnade, Bruce E.; Alshareef, Husam N.

    2010-01-01

    The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

  2. Public Transparency

    OpenAIRE

    UNCTAD; World Bank

    2018-01-01

    This note provides guidance on the type of information about agricultural investments that investors and governments can make publicly available. Transparency about certain aspects of investments can improve relations between investors and communities, enable external stakeholders to hold investors to commitments, and improve investors’ public image. Although some information should be kep...

  3. Transparency International

    NARCIS (Netherlands)

    Hulten, van M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the

  4. Color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1993-01-01

    The anomously large transmission of nucleons through a nucleus following a hard collision is explored. This effect, known as color transparency, is believed to be a prediction of QCD. The necessary conditions for its occurrence and the effects that must be included a realistic calculation are discussed

  5. Color transparency

    International Nuclear Information System (INIS)

    Miller, G.A.

    1993-01-01

    Imagine shooting a beam of protons of high momentum P through an atomic nucleus. Usually the nuclear interactions prevent the particles from emerging with momentum ∼P. Further, the angular distribution of elastically scattered protons is close to the optical diffraction pattern produced by a black disk. Thus the nucleus acts as a black disk and is not transparent. However, certain high momentum transfer reactions in which a proton is knocked out of the nucleus may be completely different. Suppose that the high momentum transfer process leads to the formation of a small-size color singlet wavepacket that is ejected from the nucleus. The effects of gluons emitted by color singlet systems of closely separated quarks and gluons tend to cancel. Thus the wavepacket-nuclear interactions are suppressed, the nucleus becomes transparant and one says that color transparency CT occurs. The observation of CT also requires that the wavepacket not expand very much while it moves through the nucleus. Simple quantum mechanical formulations can assess this expansion. The creation of a small-sized wavepacket is expected in asymptotic perturbative effects. The author reviews the few experimental attempts to observe color transparency in nuclear (e,e'p) and (p,pp) reactions and interpret the data and their implications

  6. High transparent shape memory gel

    Science.gov (United States)

    Gong, Jin; Arai, Masanori; Kabir, M. H.; Makino, Masato; Furukawa, Hidemitsu

    2014-03-01

    Gels are a new material having three-dimensional network structures of macromolecules. They possess excellent properties as swellability, high permeability and biocompatibility, and have been applied in various fields of daily life, food, medicine, architecture, and chemistry. In this study, we tried to prepare new multi-functional and high-strength gels by using Meso-Decoration (Meso-Deco), one new method of structure design at intermediate mesoscale. High-performance rigid-rod aromatic polymorphic crystals, and the functional groups of thermoreversible Diels-Alder reaction were introduced into soft gels as crosslinkable pendent chains. The functionalization and strengthening of gels can be realized by meso-decorating the gels' structure using high-performance polymorphic crystals and thermoreversible pendent chains. New gels with good mechanical properties, novel optical properties and thermal properties are expected to be developed.

  7. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Directory of Open Access Journals (Sweden)

    Sukru Burc Eryilmaz

    2014-07-01

    Full Text Available Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

  8. Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

    International Nuclear Information System (INIS)

    Arbulu, M.; Sampedro, M.C.; Gómez-Caballero, A.; Goicolea, M.A.; Barrio, R.J.

    2015-01-01

    Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds

  9. Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

    Energy Technology Data Exchange (ETDEWEB)

    Arbulu, M. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Sampedro, M.C. [Central Service of Analysis, SGIker, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Gómez-Caballero, A.; Goicolea, M.A. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Barrio, R.J., E-mail: r.barrio@ehu.es [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain)

    2015-02-09

    Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds.

  10. Size distributions of non-volatile particle residuals (Dp<800 nm at a rural site in Germany and relation to air mass origin

    Directory of Open Access Journals (Sweden)

    T. Tuch

    2007-11-01

    Full Text Available Atmospheric aerosol particle size distributions at a continental background site in Eastern Germany were examined for a one-year period. Particles were classified using a twin differential mobility particle sizer in a size range between 3 and 800 nm. As a novelty, every second measurement of this experiment involved the removal of volatile chemical compounds in a thermodenuder at 300°C. This concept allowed to quantify the number size distribution of non-volatile particle cores – primarily associated with elemental carbon, and to compare this to the original non-conditioned size distribution. As a byproduct of the volatility analysis, new particles originating from nucleation inside the thermodenuder can be observed, however, overwhelmingly at diameters below 6 nm. Within the measurement uncertainty, every particle down to particle sizes of 15 nm is concluded to contain a non-volatile core. The volume fraction of non-volatile particulate matter (non-conditioned diameter < 800 nm varied between 10 and 30% and was largely consistent with the experimentally determined mass fraction of elemental carbon. The average size of the non-volatile particle cores was estimated as a function of original non-conditioned size using a summation method, which showed that larger particles (>200 nm contained more non-volatile compounds than smaller particles (<50 nm, thus indicating a significantly different chemical composition. Two alternative air mass classification schemes based on either, synoptic chart analysis (Berliner Wetterkarte or back trajectories showed that the volume and number fraction of non-volatile cores depended less on air mass than the total particle number concentration. In all air masses, the non-volatile size distributions showed a more and a less volatile ("soot" mode, the latter being located at about 50 nm. During unstable conditions and in maritime air masses, smaller values were observed compared to stable or continental conditions

  11. Expression of MEP Pathway Genes and Non-volatile Sequestration Are Associated with Circadian Rhythm of Dominant Terpenoids Emission in Osmanthus fragrans Lour. Flowers

    Directory of Open Access Journals (Sweden)

    Riru Zheng

    2017-10-01

    Full Text Available Osmanthus fragrans Lour. is one of the top 10 traditional ornamental flowers in China famous for its unique fragrance. Preliminary study proved that the terpenoids including ionone, linalool, and ocimene and their derivatives are the dominant aroma-active compounds that contribute greatly to the scent bouquet. Pollination observation implies the emission of aromatic terpenoids may follow a circadian rhythm. In this study, we investigated the variation of volatile terpenoids and its potential regulators. The results showed that both volatile and non-volatile terpenoids presented circadian oscillation with high emission or accumulation during the day and low emission or accumulation during the night. The volatile terpenoids always increased to reach their maximum values at 12:00 h, while free and glycosylated compounds continued increasing throughout the day. The depletion of non-volatile pool might provide the substrates for volatile emission at 0:00–6:00, suggesting the sequestration of non-volatile compounds acted like a buffer regulating emission of terpenoids. Further detection of MEP pathway genes demonstrated that their expressions increased significantly in parallel with the evident increase of both volatile and non-volatile terpenoids during the day, indicating that the gene expressions were also closely associated with terpenoid formation. Thus, the expression of MEP pathway genes and internal sequestration both played crucial roles in modulating circadian rhythm of terpenoid emission in O. fragrans.

  12. Analysis of drugs of forensic interest with capillary zone electrophoresis/time-of-flight mass spectrometry based on the use of non-volatile buffers

    Czech Academy of Sciences Publication Activity Database

    Gottardo, R.; Mikšík, Ivan; Aturki, Z.; Sorio, D.; Seri, C.; Fanali, S.; Tagliaro, F.

    2012-01-01

    Roč. 33, č. 4 (2012), s. 599-606 ISSN 0173-0835 R&D Projects: GA ČR(CZ) GA203/08/1428 Institutional research plan: CEZ:AV0Z50110509 Keywords : capillary electrophoresis * drugs of abuse * non-volatile buffer * CE-MS Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.261, year: 2012

  13. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  14. Aerospace Transparency Research Compendium

    National Research Council Canada - National Science Library

    Pinkus, Alan

    2003-01-01

    ... (ARRL), located at Wright-Patterson AFB OH, has advanced aerospace transparency technology through the investigative research of numerous optical and visual parameters inherent in aerospace transparencies...

  15. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  16. Scaling Techniques for Massive Scale-Free Graphs in Distributed (External) Memory

    KAUST Repository

    Pearce, Roger; Gokhale, Maya; Amato, Nancy M.

    2013-01-01

    We present techniques to process large scale-free graphs in distributed memory. Our aim is to scale to trillions of edges, and our research is targeted at leadership class supercomputers and clusters with local non-volatile memory, e.g., NAND Flash

  17. Magnetic vortex racetrack memory

    Science.gov (United States)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

  18. Changes in non-volatile taste components of button mushroom (Agaricus bisporus) during different stages of freeze drying and freeze drying combined with microwave vacuum drying.

    Science.gov (United States)

    Pei, Fei; Shi, Ying; Gao, Xingyang; Wu, Fangning; Mariga, Alfred Mugambi; Yang, Wenjian; Zhao, Liyan; An, Xinxin; Xin, Zhihong; Yang, Fangmei; Hu, Qiuhui

    2014-12-15

    Button mushroom slices were dehydrated using freeze drying (FD) or FD combined with microwave vacuum drying (FMVD), and the non-volatile component profiles were studied. The results showed that the level of non-volatile components in button mushroom firstly increased during sublimation of FD/FMVD process and then fell during desorption in FD process and MVD in FMVD process. Compared to FD products, the contents of soluble sugars and polyols in FMVD products were relatively low, whereas the contents of total free amino acids were significantly higher, close to the level of fresh mushroom. However, there was no significant difference in the contents of 5'-nucleotides and organic acids between FD and FMVD products. The equivalent umami concentration (EUC) values for FD and FMVD products did not differ from fresh, indicating that both drying methods could effectively preserve MSG (monosodium glutamate)-like components in button mushroom. Copyright © 2014 Elsevier Ltd. All rights reserved.

  19. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NARCIS (Netherlands)

    Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

    2016-01-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

  20. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  1. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  2. Transparency and product variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    2009-01-01

    We study long run effects of transparency on the consumer side in a differentiated market. Only some consumers know prices. Increasing transparency reduces the equilibrium price, profit and firm entry. This improves welfare and, in most cases, average consumer utility....

  3. Optimal Central Bank Transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  4. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.

    2008-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  5. Optimal central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.; Eijffinger, S.C.W.; Hoogduin, L.H.

    2010-01-01

    Should central banks increase their degree of transparency any further? We show that there is likely to be an optimal intermediate degree of central bank transparency. Up to this optimum more transparency is desirable: it improves the quality of private sector inflation forecasts. But beyond the

  6. Transparency and Product Variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    We study the long run e¤ects of transparency in a circular town model of a differentiated market. The market is not fully transparent on the consumer side: A fraction of consumers are uninformed about prices. Increasing transparency reduces the equilibrium price, profit and entry of firms. This i...

  7. Transparency in Health Programmes

    OpenAIRE

    Vian, Taryn

    2008-01-01

    Transparency is an important tool for good governance, helping to expose abusive practices including fraud, patronage, corruption, and other abuses of power. Increasing transparency can also enhance accountability by providing performance management information and exposing policies and procedures to oversight. This U4 Brief discusses the role of transparency in preventing corruption in the health sector.

  8. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    voluntarism. I argue that transparency to factual questions occurs in practical deliberation in ways parallel to transparency in doxastic deliberation. I argue that this should make us reconsider the appeal to transparency in arguments against doxastic voluntarism, and the wider issue of distinguishing...... theoretical from practical rationality....

  9. Innovative transparent armour concepts

    NARCIS (Netherlands)

    Carton, E.P.; Broos, J.P.F.

    2011-01-01

    Ever since WWII transparent armour consists of a multi-layer of glass panels bonded by thin polymer bond-films using an autoclave process. TNO has worked on the development of innovative transparent armour concepts that are lighter and a have better multi-hit capacity. Two new transparent armour

  10. Nonvolatile Memory Technology for Space Applications

    Science.gov (United States)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  11. Contribution of non-volatile and aroma fractions to in-mouth sensory properties of red wines: wine reconstitution strategies and sensory sorting task.

    Science.gov (United States)

    Sáenz-Navajas, María-Pilar; Campo, Eva; Avizcuri, José Miguel; Valentin, Dominique; Fernández-Zurbano, Purificación; Ferreira, Vicente

    2012-06-30

    This work explores to what extent the aroma or the non-volatile fractions of red wines are responsible for the overall flavor differences perceived in-mouth. For this purpose, 14 samples (4 commercial and 10 reconstituted wines), were sorted by a panel of 30 trained assessors according to their sensory in-mouth similarities. Reconstituted wines were prepared by adding the same volatile fraction (coming from a red wine) to the non-volatile fraction of 10 different red wines showing large differences in perceived astringency. Sorting was performed under three different conditions: (a) no aroma perception: nose-close condition (NA), (b) retronasal aroma perception only (RA), and (c) allowing retro- and involuntary orthonasal aroma perception (ROA). Similarity estimates were derived from the sorting and submitted to multidimensional scaling (MDS) followed by hierarchical cluster analysis (HCA). Results have clearly shown that, globally, aroma perception is not the major driver of the in-mouth sensory perception of red wine, which is undoubtedly primarily driven by the perception of astringency and by the chemical compounds causing it, particularly protein precipitable proanthocyanidins (PAs). However, aroma perception plays a significant role on the perception of sweetness and bitterness. The impact of aroma seems to be more important whenever astringency, total polyphenols and protein precipitable PAs levels are smaller. Results also indicate that when a red-black fruit odor nuance is clearly perceived in conditions in which orthonasal odor perception is allowed, a strong reduction in astringency takes place. Such red-black fruit odor nuance seems to be the result of a specific aroma release pattern as a consequence of the interaction between aroma compounds and the non-volatile matrix. Copyright © 2011 Elsevier B.V. All rights reserved.

  12. Analysis of Non-Volatile Chemical Constituents of Menthae Haplocalycis Herba by Ultra-High Performance Liquid Chromatography-High Resolution Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Lu-Lu Xu

    2017-10-01

    Full Text Available Menthae Haplocalycis herba, one kind of Chinese edible herbs, has been widely utilized for the clinical use in China for thousands of years. Over the last decades, studies on chemical constituents of Menthae Haplocalycis herba have been widely performed. However, less attention has been paid to non-volatile components which are also responsible for its medical efficacy than the volatile constituents. Therefore, a rapid and sensitive method was developed for the comprehensive identification of the non-volatile constituents in Menthae Haplocalycis herba using ultra-high performance liquid chromatography coupled with linear ion trap-Orbitrap mass spectrometry (UHPLC-LTQ-Orbitrap. Separation was performed with Acquity UPLC® BEH C18 column (2.1 mm × 100 mm, 1.7 μm with 0.2% formic acid aqueous solution and acetonitrile as the mobile phase under gradient conditions. Based on the accurate mass measurement (<5 ppm, MS/MS fragmentation patterns and different chromatographic behaviors, a total of 64 compounds were unambiguously or tentatively characterized, including 30 flavonoids, 20 phenolic acids, 12 terpenoids and two phenylpropanoids. Finally, target isolation of three compounds named Acacetin, Rosmarinic acid and Clemastanin A (first isolated from Menthae Haplocalycis herba were performed based on the obtained results, which further confirmed the deduction of fragmentation patterns and identified the compounds profile in Menthae Haplocalycis herba. Our research firstly systematically elucidated the non-volatile components of Menthae Haplocalycis herba, which laid the foundation for further pharmacological and metabolic studies. Meanwhile, our established method was useful and efficient to screen and identify targeted constituents from traditional Chinese medicine extracts.

  13. Low-cost fabrication of ternary CuInSe{sub 2} nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    Energy Technology Data Exchange (ETDEWEB)

    Chawla, Parul; Narain Sharma, Shailesh, E-mail: shailesh@nplindia.org; Singh, Son

    2014-11-15

    Wet-route synthesis of CuInSe{sub 2} (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (E{sub g})∼1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (∼250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles. - Graphical abstract: Without resorting to any post-selenization process and using the colligative properties of the mixture comprising of volatile aniline and non-volatile 1-octadecene to manoeuvre the growth conditions to promote Ostwald ripening, a single phase, monodispersive and nearly stoichiometric ternary CISe nanocrystals are formed by wet-synthesis route. - Highlights: • Wet-route synthesis of CISe nanocrystals reported without post-selenization process. • Single-phase, stable and well-passivated colloidal ternary CISe nanocrystals formed. • Novel combination of capping agents: volatile aniline and non-volatile 1-octadecene. • Higher growth temperature attained using the colligative properties of the mixture. • Metallic salts presence explains exp. and theoretical boiling point difference.

  14. The art of transparency.

    Science.gov (United States)

    Sayim, Bilge; Cavanagh, Patrick

    2011-01-01

    Artists throughout the ages have discovered a number of techniques to depict transparency. With only a few exceptions, these techniques follow closely the properties of physical transparency. The two best known properties are X-junctions and the luminance relations described by Metelli. X-junctions are seen where the contours of a transparent material cross contours of the surface behind; Metelli's constraints on the luminance relations between the direct and filtered portions of the surface specify a range of luminance values that are consistent with transparency. These principles have been used by artists since the time of ancient Egypt. However, artists also discovered that stimuli can be seen as transparent even when these physical constraints are not met. Ancient Greek artists, for example, were able to depict transparent materials in simple black-and-white line drawings. Artists also learned how to represent transparency in cases where neither X-junctions nor Metelli's constraints could apply: for example, where no portions of the objects behind the transparent material extend beyond it. Many painters convincingly portrayed transparency in these cases by depicting the effects the transparent medium would have on material or object properties. Here, we show how artists employed these and other techniques revealing their anticipation of current formalizations of perceived transparency, and we suggest new, as-yet-untested principles.

  15. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    2015-01-01

    organizational effectiveness and widened democratic practice. Yet, with its most common operationalization, as information, transparency reinstalls a 'purified' notion of communication devoid of mystery, inaccuracy, and (mis)representation. We apply transparency to itself by unpacking its implicit model......The current emphasis on organizational transparency signifies a growing demand for insight, clarity, accountability, and participation. Holding the promise of improved access to valid and trustworthy knowledge about organizations, the transparency pursuit has great potential for enhanced...... of communication and critiquing its obliviousness to the representative nature of transparency-related messages and the attendant complexities of motivation. This critique interrogates the ambiguities and ambivalence of the transparency pursuit and demonstrates how the goals of organizational transparency...

  16. Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process.

    Science.gov (United States)

    Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho; Kim, Hee-Dong

    2018-09-01

    In recent research of resistive random access memory (RRAM), solving the degradation phenomenon induced by both a high forming voltage to form the conducting filaments (CFs) and a high reset current is one of the main issues encountered. In this study, to overcome these problems, we propose forming-free bipolar resistive switching (BRS) behaviors by employing an ITO film with abundant oxygen vacancies, instead of conventional CF based RRAM requiring a forming process, and systematically investigate the feasibility of forming free BRS behaviors and a possible switching mechanism. Compared to conventional CF based RRAM devices, it is possible for the proposed devices to achieve stable BRS properties (i.e., narrow variations of operating current and voltage, and retention) without the forming process, under an operating current of sub-nano ampere. In addition, the proposed cell shows a stable hysteresis of current-voltage curves, which is well matched with the Poole-Frenkel emission, and currents at a low voltage are limited due to a formed barrier height like Schottky diode between the active layer and electrodes.

  17. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Evaluation of non-volatile metabolites in beer stored at high temperature and utility as an accelerated method to predict flavour stability.

    Science.gov (United States)

    Heuberger, Adam L; Broeckling, Corey D; Sedin, Dana; Holbrook, Christian; Barr, Lindsay; Kirkpatrick, Kaylyn; Prenni, Jessica E

    2016-06-01

    Flavour stability is vital to the brewing industry as beer is often stored for an extended time under variable conditions. Developing an accelerated model to evaluate brewing techniques that affect flavour stability is an important area of research. Here, we performed metabolomics on non-volatile compounds in beer stored at 37 °C between 1 and 14 days for two beer types: an amber ale and an India pale ale. The experiment determined high temperature to influence non-volatile metabolites, including the purine 5-methylthioadenosine (5-MTA). In a second experiment, three brewing techniques were evaluated for improved flavour stability: use of antioxidant crowns, chelation of pro-oxidants, and varying plant content in hops. Sensory analysis determined the hop method was associated with improved flavour stability, and this was consistent with reduced 5-MTA at both regular and high temperature storage. Future studies are warranted to understand the influence of 5-MTA on flavour and aging within different beer types. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    Science.gov (United States)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  20. Transparency in Organizing

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa

    This dissertation provides a critical analysis of transparency in the context of organizing. The empirical material is based on qualitative studies of international cooperative organizations. The dissertation seeks to contribute to transparency and organizing scholarship by adopting a communication...... centred approach to explore the implications of pursuing ideals of transparency in organizational relationships. The dissertation is comprised of four papers each contributing to extant debates in organizational studies and transparency literature. The findings indicate that transparency, in contrast...... to being a solution for efficiency and democratic organizing, is a communicatively contested process which may lead to unintended consequences. The dissertation shows that transparency is performative: it can impact authority by de/legitimating action, shape the processes of organizational identity co...

  1. Transparency views by media

    International Nuclear Information System (INIS)

    Ikawa, Y.

    2007-01-01

    In this presentation, various problems surrounding the issues of transparency, such as 'What exactly should be transparent?' 'Is all that we want amounting only to transparency?' 'Is it possible to thoroughly implement transparency', etc., are discussed with due consideration for the viewpoints of the wide range of parties concerned involving areas of politics, administration, enterprises, media, individuals, and so on. First of all, the explanation is focused on how the transparency is recognised, as well as how it is regarded as important, for the public at large and the media. Then, based on the concept that transparency is required for what cannot be justified to be secret, we will contemplate what should be transparent in the areas of politics, administration and enterprises, using the case of nuclear issues as example. Next, the discussion will proceed to the point whether the achievement of transparency itself should be the ultimate goal, in the light of taking into consideration the standpoints of individuals and the receivers of the information, in addition to that of the administration, politics, and enterprises. In closing, we will discuss what the necessary measures will be to materialize the complete transparency on the basis of the discussions made thus far. (author)

  2. Plasmonic transparent conductors

    Science.gov (United States)

    Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

    2016-09-01

    Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

  3. Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

    NARCIS (Netherlands)

    Rocha, P.R.F.; Gomes, H.L.; Kiazadeh, A.; Chen, Qian; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching

  4. Transparency of Banking Supervisors

    NARCIS (Netherlands)

    Liedorp, Franka; Mosch, Robert; van der Cruijsen, Carin; de Haan, Jakob

    Following Eijffinger and Geraats (2006), this paper constructs an index of transparency of banking supervisors that takes political, economic, procedural, policy, and operational transparency into account. Based on a survey, the index is constructed for 24 banking supervisors. The average score is

  5. Epilogue: degrees of transparency

    NARCIS (Netherlands)

    Hengeveld, K.

    2011-01-01

    In this epilogue the results of the analyses of four different languages in the preceding papers are compared. It is shown that the degrees of transparency of these languages can be represented on an implicational scale, and that the features themselves can be ranked on a transparency scale as well.

  6. On color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1989-10-01

    A quantum mechanical treatment of high momentum transfer nuclear processes is presented. Color transparency, the suppression of initial and final state interaction effects, is shown to arise from using the closure approximation. New conditions for the appearance of color transparency are derived

  7. Understanding modern transparency

    NARCIS (Netherlands)

    Meijer, A.J.|info:eu-repo/dai/nl/172436729

    2009-01-01

    Proponents and opponents fiercely debate whether computer-mediated transparency has a positive effect on trust in the public sector. This article enhances our understanding of transparency by presenting three perspectives: a premodern, modern and post-modern perspective, and analyzing the basic

  8. Introduction: The Transparency Issue

    NARCIS (Netherlands)

    Teurlings, J.; Stauff, M.

    2014-01-01

    Besides giving an overview on the individual contributions, this introduction to the special issue on transparency delineates a conceptual context for a critical analysis of the contemporary discourse on transparency and the media mechanisms related to it. It focuses on three ambivalences inherent

  9. EU Transparency Register

    NARCIS (Netherlands)

    Mańko, R.; Thiel, M.; Bauer, E.

    2014-01-01

    Widespread lobbying in the EU institutions has led to criticism regarding the transparency and accountability of the EU's decision-making process. In response to these concerns, the Parliament set up its transparency register in 1995, followed by the Commission in 2008. The two institutions merged

  10. Advice on Admissions Transparency

    Science.gov (United States)

    Australian Government Tertiary Education Quality and Standards Agency, 2018

    2018-01-01

    Admissions transparency means that prospective domestic undergraduate students can easily find good quality admissions information that allows them to compare courses and providers and make informed study choices. In October 2016 the Higher Education Standards Panel (HESP) made recommendations to achieve greater transparency in higher education…

  11. Privacy transparency patterns

    NARCIS (Netherlands)

    Siljee B.I.J.

    2015-01-01

    This paper describes two privacy patterns for creating privacy transparency: the Personal Data Table pattern and the Privacy Policy Icons pattern, as well as a full overview of privacy transparency patterns. It is a first step in creating a full set of privacy design patterns, which will aid

  12. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    and trustworthy knowledge about contemporary organizations, the transparency discourse has significant democratic potential. Yet, its most common operationalization – as information availability – reinstalls a “purified” notion of communication devoid of mystery, inaccuracy and misrepresentation. In this paper......The current emphasis on organizational and institutional transparency – driven by NGOs, inquisitive media, critical investors and other engaged stakeholders – signifies a growing demand for insight, clarity, participation and democracy. Holding the promise of improved access to valid......, we apply transparency to itself by unpacking its implicit model of communication and critiquing its ignorance towards the representative nature of current transparency practices. The critique unfolds the ambiguous nature of the transparency pursuit and demonstrates how its desire for insight, clarity...

  13. Magnetic vortex racetrack memory

    Energy Technology Data Exchange (ETDEWEB)

    Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

  14. Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Faita, F. L., E-mail: fabriciofaita@gmail.com [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC (Brazil); Silva, J. P. B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M. J. M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-14

    In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

  15. Simultaneous Microwave Extraction and Separation of Volatile and Non-Volatile Organic Compounds of Boldo Leaves. From Lab to Industrial Scale

    Directory of Open Access Journals (Sweden)

    Loïc Petigny

    2014-04-01

    Full Text Available Microwave extraction and separation has been used to increase the concentration of the extract compared to the conventional method with the same solid/liquid ratio, reducing extraction time and separate at the same time Volatile Organic Compounds (VOC from non-Volatile Organic Compounds (NVOC of boldo leaves. As preliminary study, a response surface method has been used to optimize the extraction of soluble material and the separation of VOC from the plant in laboratory scale. The results from the statistical analysis revealed that the optimized conditions were: microwave power 200 W, extraction time 56 min and solid liquid ratio of 7.5% of plants in water. Lab scale optimized microwave method is compared to conventional distillation, and requires a power/mass ratio of 0.4 W/g of water engaged. This power/mass ratio is kept in order to upscale from lab to pilot plant.

  16. Analysis of drugs of forensic interest with capillary zone electrophoresis/time-of-flight mass spectrometry based on the use of non-volatile buffers.

    Science.gov (United States)

    Gottardo, Rossella; Mikšík, Ivan; Aturki, Zeineb; Sorio, Daniela; Seri, Catia; Fanali, Salvatore; Tagliaro, Franco

    2012-02-01

    The present work is aimed at investigating the influence of the background electrolyte composition and concentration on the separation efficiency and resolution and mass spectrometric detection of illicit drugs in a capillary zone electrophoresis-electrospray ionization-time of flight mass spectrometry (CZE-ESI-TOF MS) system. The effect of phosphate, borate and Tris buffers on the separation and mass spectrometry response of a mixture of 3,4-methylenedioxyamphetamine, 3,4-methylenedioxymethamphetamine, methadone, cocaine, morphine, codeine and 6-monoacetylmorphine was studied, in comparison with a reference ammonium formate separation buffer. Inorganic non-volatile borate and Tris buffers proved hardly suitable for capillary electrophoresis-mass spectrometry (CE-MS) analysis, but quite unexpectedly ammonium phosphate buffers showed good separation and ionization performances for all the analytes tested. Applications of this method to real samples of hair from drug addicts are also provided. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    1998-01-01

    This paper studies product market competition under a strategic transparency decision. Dominant investors can influence information collection in the financial market, and thereby corporate transparency, by affecting market liquidity or the cost of information collection. More transparency on a

  18. Dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    1999-01-01

    This paper studies product market competition under a strategic transparency decision. Dominant investors can influence information collection in the financial market, and thereby corporate transparency, by affecting market liquidity or the cost of information collection. More transparency on a

  19. Transparent lithium-ion batteries

    KAUST Repository

    Yang, Y.; Jeong, S.; Hu, L.; Wu, H.; Lee, S. W.; Cui, Y.

    2011-01-01

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent

  20. A Simultaneous Analytical Method to Profile Non-Volatile Components with Low Polarity Elucidating Differences Between Tobacco Leaves Using Atmospheric Pressure Chemical Ionization Mass Spectrometry Detection

    Directory of Open Access Journals (Sweden)

    Ishida Naoyuki

    2016-04-01

    Full Text Available A comprehensive analytical method using liquid chromatography atmospheric pressure chemical ionization mass spectrometry detector (LC/APCI-MSD was developed to determine key non-volatile components with low polarity elucidating holistic difference among tobacco leaves. Nonaqueous reversed-phase chromatography (NARPC using organic solvent ensured simultaneous separation of various components with low polarity in tobacco resin. Application of full-scan mode to APCI-MSD hyphenated with NARPC enabled simultaneous detection of numerous intense product ions given by APCI interface. Parameters for data processing to filter, feature and align peaks were adjusted in order to strike a balance between comprehensiveness and reproducibility in analysis. 63 types of components such as solanesols, chlorophylls, phytosterols, triacylglycerols, solanachromene and others were determined on total ion chromatograms according to authentic components, wavelength spectrum and mass spectrum. The whole area of identified entities among the ones detected on total ion chromatogram reached to over 60% and major entities among those identified showed favorable linearity of determination coefficient of over 0.99. The developed method and data processing procedure were therefore considered feasible for subsequent multivariate analysis. Data matrix consisting of a number of entities was then subjected to principal component analysis (PCA and hierarchical clustering analysis. Cultivars of tobacco leaves were distributed far from each cultivar on PCA score plot and each cluster seemed to be characterized by identified non-volatile components with low polarity. While fluecured Virginia (FCV was loaded by solanachromene, phytosterol esters and triacylglycerols, free phytosterols and chlorophylls loaded Burley (BLY and Oriental (ORI respectively. Consequently the whole methodology consisting of comprehensive method and data processing procedure proved useful to determine key

  1. A Dictionary for Transparency

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.

    2001-11-15

    There are many terms that are used in association with the U.S. Defense Threat Reduction Agency (DTRA) Transparency Project associated with the Mayak Fissile Materials Storage Facility. This is a collection of proposed definitions of these terms.

  2. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    2014-01-01

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show...... that the additional data disclosure increased trading activity, but also increased transactions costs through wider bid-ask spreads. Thus, in contrast to popular policy belief, the paper finds that more transparency need not improve market liquidity. Second, the paper finds a particularly strong immediate liquidity...... impact accompanied by altered trading behavior, which suggests a significant impact on institutional traders subscribing relatively early. Lastly, since the effective level of market transparency is bound to depend on how many traders are subscribing to the data, the study can empirically establish...

  3. Color transparency study group

    International Nuclear Information System (INIS)

    Appel, J.A.; Pordes, S.; Botts, J.; Bunce, G.; Farrar, G.

    1990-01-01

    The group studied the relatively new notion of color transparency, discussed present experimental evidence for the effect, and explored several ideas for future experiments. This write-up summarizes these discussions. 11 refs., 1 fig

  4. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show...... that the additional data disclosure increased trading activity, but also increased transactions costs through wider bid-ask spreads. Thus, in contrast to popular policy belief, the paper finds that more transparency need not improve market liquidity. Second, the paper finds a particularly strong immediate liquidity...... impact accompanied by altered trading behavior, which suggests a significant impact on institutional traders subscribing relatively early. Lastly, since the effective level of market transparency is bound to depend on how many traders are subscribing to the data, the study can empirically establish...

  5. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  6. What color transparency measures

    International Nuclear Information System (INIS)

    Jain, P.; Ralston, J.P.

    1992-01-01

    Color transparency is commonly accepted to be a prediction of perturbative QCD. However it is more a phenomenon probing the interface between the perturbative and nonperturbative regimes, leading to some intricacy in its theoretical description. In this paper we study the consequences of the impulse approximation to the theory in various quantum mechanical bases. We show that the fully interacting hadronic basis, which consists of eigenstates of the exact Hamiltonian in the presence of the nucleus, provides a natural basis to study color transparency. In this basis we can relate the quark wave function at a small transverse separation distance b 2 2 directly to transparency ratios measured in experiment. With the formalism, experiment can be used to map out the quark wave function in this region. We exhibit several loopholes in existing arguments predicting a rise in transparency ratios with energy, and suggest alternatives. Among the results, we argue that the theoretical prediction of a rising transparency ratio with energy may be on better footing for heavy-quark bound states than for relativistic light-quark systems. We also point out that transparency ratios can be constant with energy and not at variance with perturbative QCD

  7. Search for Non-Volatile Components with Low Polarity Characterizing Tobacco Leaves Using Liquid Chromatography / Atmospheric Pressure Chemical Ionization Mass Spectrometry Detector

    Directory of Open Access Journals (Sweden)

    Ishida Naoyuki

    2015-06-01

    Full Text Available Alors que les regards se sont principalement tournés sur les composants à faible polarité dans la résine de feuilles de tabac en raison de leur lien probable avec le goût et l’arôme des produits du tabac, l’absence d’une méthode praticable et d’un outil analytique a longtemps fait obstacle à l’identification des composants non-volatils à faible polarité. L’auteur a, en l’occurrence, porté son attention sur l’analyse recourant à la chromatographie en phase inverse non aqueuse couplée à un détecteur à barrettes de photodiodes et à un détecteur de spectrométrie de masse par ionisation chimique à pression atmosphérique. Cette analyse fut considérée applicable à la séparation des composants nonvolatils significatifs mais inconnus. Son application a permis, avec succès, de séparer, détecter et quantifier simultanément plus de 100 composants non-volatils présentant des polarités faibles et différenciées. Ces composantes furent, entre autres, des solanésols, des triacylglycérides, des phytostérols et des chlorophylles. Cependant, les données concernant les différences de composition parmi les diverses feuilles de tabac demeurent encore partielles et basées sur une analyse ciblée plutôt que globales et basées sur une analyse exhaustive. Aucune étude n’a été, à ce jour, accomplie qui recense les composants essentiels permettant de distinguer, parmi les feuilles de tabac, les différents goûts, arômes, variétés, cultivars, processus de séchage et régions de culture. Par conséquent, toutes les données de quantification ont été consolidées dans le but de former une matrice multidimensionnelle complète et ont subi un traitement statistique qui a mis en exergue les catégories et les composants-clés des diverses feuilles de tabac grâce à une analyse en composantes principales et une classification hiérarchique. Les feuilles de tabac ont, dans un premier temps, été ventilées en

  8. Limits of transparency of transparent conducting oxides

    Science.gov (United States)

    Peelaers, Hartwin

    A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

  9. Supporting Transparency between Students

    DEFF Research Database (Denmark)

    Dalsgaard, Christian

    The paper presents the results of a case study that explores the potentials of weblogs and social bookmarking to support transparency in a university course. In the course, groups of students used weblogs and social bookmarking in their work. The objective of the case was to empower students...... by providing them with tools that would be visible to the other students in the course, thus, making students’ ideas, thoughts and questions visible to the other students in the course. The paper concludes that use of digital media for transparency can support empowerment of students and inspiration among...... students in a course, but that the challenge is to create a balance between personal tools and tools for collaborative group work that are also suitable for transparency between students....

  10. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic voluntar......It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic...

  11. Spironolactone release from liquisolid formulations prepared with Capryol™ 90, Solutol® HS-15 and Kollicoat® SR 30 D as non-volatile liquid vehicles.

    Science.gov (United States)

    Elkordy, Amal Ali; Tan, Xin Ning; Essa, Ebtessam Ahmed

    2013-02-01

    The purpose of the study is to enhance dissolution of spironolactone as a model hydrophobic drug through application of liquisolid technology. Spironolactone is prepared as liquisolid formulations, and its dissolution property is evaluated and compared to that of conventional spironolactone tablets and pure spironolactone. Three non-volatile liquid vehicles were used in the design of spironolactone liquisolid formulations, Capryol™ 90, Synperonic® PE/L61 in combination with Solutol® HS-15 at a ratio of 1:1, and Kollicoat® SR 30 D. Spironolactone liquisolid formulations were tested according to British Pharmacopoeia (BP) quality control tests. Furthermore, the prepared liquisolid powder formulations were evaluated via differential scanning calorimetry (DSC), Fourier transform infrared (FT-IR) and scanning electron microscopy. Also, liquisolid formulations were subjected to testing of storage stability at high relative humidity. The results indicated that most of liquisolid tablets met the BP requirements. Dissolution results indicate that release of spironolactone was significantly increased (PSolutol® HS-15 showed highest dissolution. DSC thermograms from liquisolid formulations revealed that drug endothermic peak was disappeared after processing. Dissolution, DSC and FT-IR data after storage demonstrated that there were no significant changes in the formulations after storage. In conclusion, the liquid vehicles used within spironolactone liquisolid formulations enhanced drug dissolution rate. Copyright © 2012 Elsevier B.V. All rights reserved.

  12. Volatile and non-volatile radiolysis products in irradiated multilayer coextruded food-packaging films containing a buried layer of recycled low-density polyethylene.

    Science.gov (United States)

    Chytiri, S; Goulas, A E; Badeka, A; Riganakos, K A; Kontominas, M G

    2005-12-01

    The effects of gamma-irradiation (5-60 kGy) on radiolysis products and sensory changes of experimental five-layer food-packaging films were determined. Films contained a middle buried layer of recycled low-density polyethylene (LDPE) comprising 25-50% by weight (bw) of the multilayer structure. Respective films containing 100% virgin LDPE as the buried layer were used as controls. Under realistic polymer/food simulant contact conditions during irradiation, a large number of primary and secondary radiolysis products (hydrocarbons, aldehydes, ketones, alcohols, carboxylic acids) were produced. These compounds were detected in the food simulant after contact with all films tested, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food preservation). The type and concentration of radiolysis products increased progressively with increasing dose. Generally, there were no significant differences in radiolysis products between samples containing a buried layer of recycled LDPE and those containing virgin LDPE (all absorbed doses), indicating the good barrier properties of external virgin polymer layers. Volatile and non-volatile compounds produced during irradiation affected the sensory properties of potable water after contact with packaging films. Taste transfer to water was observed mainly at higher doses and was more noticeable for multilayer structures containing recycled LDPE, even though differences were slight.

  13. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi

    2016-11-23

    Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

  14. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    Science.gov (United States)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  15. Towards Terabit Memories

    Science.gov (United States)

    Hoefflinger, Bernd

    Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

  16. The Causes of Fiscal Transparency

    DEFF Research Database (Denmark)

    Alt, James E.; Lassen, David Dreyer; Rose, Shanna

    We use unique panel data on the evolution of transparent budget procedures in the American states over the past three decades to explore the political and economic determinants of fiscal transparency. Our case studies and quantitative analysis suggest that both politics and fiscal policy outcomes...... influence the level of transparency. More equal political competition and power sharing are associated with both greater levels of fiscal transparency and increases in fiscal transparency during the sample period. Political polarization and past fiscal conditions, in particular state government debt...... and budget imbalance, also appear to affect the level of transparency...

  17. Transparency and imaginary colors

    NARCIS (Netherlands)

    Richards, W.; Koenderink, J.J.; Van Doorn, A.

    2009-01-01

    Unlike the Metelli monochrome transparencies, when overlays and their backgrounds have chromatic content, the inferred surface colors may not always be physically realizable, and are in some sense “imaginary.” In these cases, the inferred chromatic transmittance or reflectance of the overlay lies

  18. Complicating Methodological Transparency

    Science.gov (United States)

    Bridges-Rhoads, Sarah; Van Cleave, Jessica; Hughes, Hilary E.

    2016-01-01

    A historical indicator of the quality, validity, and rigor of qualitative research has been the documentation and disclosure of the behind-the-scenes work of the researcher. In this paper, we use what we call "methodological data" as a tool to complicate the possibility and desirability of such transparency. Specifically, we draw on our…

  19. Transparency for international trade

    Science.gov (United States)

    K. R. Lakin; G. A. Fowler; W. D. Bailey; J. Cavey; P. Lehtonen

    2003-01-01

    U.S. Department of Agriculture - Animal and Plant Health Inspection Service - Plant Protection and Quarantine (USDA-APHIS-PPQ) has developed a Regulated Plant Pest List (RPPL). This provides trading partners with an official list of plant pests of concern to the U.S., along with providing greater transparency of Agency actions.

  20. The Mediated Transparent Society

    DEFF Research Database (Denmark)

    Backer, Lise

    2001-01-01

    in the mediated transparent society. The paper concludes that, based on these analyses, the mediated panopticism working on the business segment is not an effective disciplinary apparatus, which can guarantee that business corporations are carrying out important ecological or ethical improvements....

  1. Remote Monitoring Transparency Program

    International Nuclear Information System (INIS)

    Sukhoruchkin, V.K.; Shmelev, V.M.; Roumiantsev, A.N.

    1996-01-01

    The objective of the Remote Monitoring Transparency Program is to evaluate and demonstrate the use of remote monitoring technologies to advance nonproliferation and transparency efforts that are currently being developed by Russia and the United States without compromising the national security to the participating parties. Under a lab-to-lab transparency contract between Sandia National Laboratories (SNL) and the Kurchatov Institute (KI RRC), the Kurchatov Institute will analyze technical and procedural aspects of the application of remote monitoring as a transparency measure to monitor inventories of direct- use HEU and plutonium (e.g., material recovered from dismantled nuclear weapons). A goal of this program is to assist a broad range of political and technical experts in learning more about remote monitoring technologies that could be used to implement nonproliferation, arms control, and other security and confidence building measures. Specifically, this program will: (1) begin integrating Russian technologies into remote monitoring systems; (2) develop remote monitoring procedures that will assist in the application of remote monitoring techniques to monitor inventories of HEU and Pu from dismantled nuclear weapons; and (3) conduct a workshop to review remote monitoring fundamentals, demonstrate an integrated US/Russian remote monitoring system, and discuss the impacts that remote monitoring will have on the national security of participating countries

  2. File: nuclear safety and transparency

    International Nuclear Information System (INIS)

    Martinez, J.P.; Etchegoyen, A.; Jeandron, C.

    2001-01-01

    Several experiences of nuclear safety and transparency are related in this file. Public information, access to documents, transparency in nuclear regulation are such subjects developed in this debate. (N.C.)

  3. Transparent Armor Cost Benefit Study

    National Research Council Canada - National Science Library

    Prokurat Franks, Lisa; Holm, David; Barnak, Rick

    2006-01-01

    ...; the increase in demand for transparent gun shields in Operation Iraqi Freedom (OIF) and early versions of jerry-rigged shields used in OIF, including Pope glass and Transparent Armored Gun Shields (TAGS...

  4. Flash memories economic principles of performance, cost and reliability optimization

    CERN Document Server

    Richter, Detlev

    2014-01-01

    The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.   Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based pr...

  5. Foliar Essential Oil Glands of Eucalyptus Subgenus Eucalyptus (Myrtaceae Are a Rich Source of Flavonoids and Related Non-Volatile Constituents.

    Directory of Open Access Journals (Sweden)

    Jason Q D Goodger

    Full Text Available The sub-dermal secretory cavities (glands embedded within the leaves of Eucalyptus (Myrtaceae were once thought to be the exclusive repositories of monoterpene and sesquiterpene oils. Recent research has debunked this theory and shown that abundant non-volatile compounds also occur within foliar glands. In particular, glands of four species in subgenus Eucalyptus contain the biologically active flavanone pinocembrin. Pinocembrin shows great promise as a pharmaceutical and is predominantly plant-sourced, so Eucalyptus could be a potential commercial source of such compounds. To explore this we quantified and assessed the purity of pinocembrin in glands of 11 species of E. subg. Eucalyptus using Electro-Spray Ionisation Liquid Chromatography Mass Spectrometry of acetonitrile extracts and Gas Chromatography Mass Spectrometry analyses of hexane extracts of isolated glands which were free from other leaf tissues. Our results showed that the glands of subgenus Eucalyptus contain numerous flavanones that are structurally related to pinocembrin and often present in much greater abundance. The maximum concentration of pinocembrin was 2 mg g-1 dry leaf found in E. stellulata, whereas that of dimethylpinocembrin (5,7-dimethoxyflavanone was 10 mg g-1 in E. oreades and that of pinostrobin (5-hydroxy-7-methoxyflavanone was 12 mg g-1 in E. nitida. We also found that the flavanones are exclusively located within the foliar glands rather than distributed throughout leaf tissues. The flavanones differ from the non-methylated pinocembrin in the degree and positions of methylation. This finding is particularly important given the attractiveness of methylated flavonoids as pharmaceuticals and therapeutics. Another important finding was that glands of some members of the subgenus also contain flavanone O-glucosides and flavanone-β-triketone conjugates. In addition, glands contain free β-triketones, β-triketone heterodimers and chromone C-glucosides. Therefore, the

  6. Foliar Essential Oil Glands of Eucalyptus Subgenus Eucalyptus (Myrtaceae) Are a Rich Source of Flavonoids and Related Non-Volatile Constituents.

    Science.gov (United States)

    Goodger, Jason Q D; Seneratne, Samiddhi L; Nicolle, Dean; Woodrow, Ian E

    2016-01-01

    The sub-dermal secretory cavities (glands) embedded within the leaves of Eucalyptus (Myrtaceae) were once thought to be the exclusive repositories of monoterpene and sesquiterpene oils. Recent research has debunked this theory and shown that abundant non-volatile compounds also occur within foliar glands. In particular, glands of four species in subgenus Eucalyptus contain the biologically active flavanone pinocembrin. Pinocembrin shows great promise as a pharmaceutical and is predominantly plant-sourced, so Eucalyptus could be a potential commercial source of such compounds. To explore this we quantified and assessed the purity of pinocembrin in glands of 11 species of E. subg. Eucalyptus using Electro-Spray Ionisation Liquid Chromatography Mass Spectrometry of acetonitrile extracts and Gas Chromatography Mass Spectrometry analyses of hexane extracts of isolated glands which were free from other leaf tissues. Our results showed that the glands of subgenus Eucalyptus contain numerous flavanones that are structurally related to pinocembrin and often present in much greater abundance. The maximum concentration of pinocembrin was 2 mg g-1 dry leaf found in E. stellulata, whereas that of dimethylpinocembrin (5,7-dimethoxyflavanone) was 10 mg g-1 in E. oreades and that of pinostrobin (5-hydroxy-7-methoxyflavanone) was 12 mg g-1 in E. nitida. We also found that the flavanones are exclusively located within the foliar glands rather than distributed throughout leaf tissues. The flavanones differ from the non-methylated pinocembrin in the degree and positions of methylation. This finding is particularly important given the attractiveness of methylated flavonoids as pharmaceuticals and therapeutics. Another important finding was that glands of some members of the subgenus also contain flavanone O-glucosides and flavanone-β-triketone conjugates. In addition, glands contain free β-triketones, β-triketone heterodimers and chromone C-glucosides. Therefore, the foliar glands

  7. Comparison of volatile and non-volatile metabolites in rice wine fermented by Koji inoculated with Saccharomycopsis fibuligera and Aspergillus oryzae.

    Science.gov (United States)

    Son, Eun Yeong; Lee, Sang Mi; Kim, Minjoo; Seo, Jeong-Ah; Kim, Young-Suk

    2018-07-01

    This study investigated volatile and nonvolatile metabolite profiles of makgeolli (a traditional rice wine in Korea) fermented by koji inoculated with Saccharomycopsis fibuligera and/or Aspergillus oryzae. The enzyme activities in koji were also examined to determine their effects on the formation of metabolites. The contents of all 18 amino acids detected were the highest in makgeolli fermented by S. fibuligera CN2601-09, and increased after combining with A. oryzae CN1102-08, unlike the contents of most fatty acids. On the other hand, major volatile metabolites were fusel alcohols, acetate esters, and ethyl esters. The contents of most fusel alcohols and acetate esters were the highest in makgeolli fermented by S. fibuligera CN2601-09, for which the protease activity was the highest, leading to the largest amounts of amino acods. The makgeolli samples fermented only by koji inoculated with S. fibuligera could be discriminated on PCA plots from the makgeolli samples fermented in combination with A. oryzae. In the case of nonvolatile metabolites, all amino acids and some metabolites such as xylose, 2-methylbenzoic acid, and oxalic acid contributed mainly to the characteristics of makgeolli fermented by koji inoculated with S. fibuligera and A. oryzae. These results showed that the formations of volatile and nonvolatile metabolites in makgeolli can be significantly affected by microbial strains with different enzyme activities in koji. To our knowledge, this study is the first report on the effects of S. fibuligera strains on the formation of volatile and non-volatile metabolites in rice wine, facilitating their use in brewing rice wine. Copyright © 2018. Published by Elsevier Ltd.

  8. Certificate Transparency with Privacy

    Directory of Open Access Journals (Sweden)

    Eskandarian Saba

    2017-10-01

    Full Text Available Certificate transparency (CT is an elegant mechanism designed to detect when a certificate authority (CA has issued a certificate incorrectly. Many CAs now support CT and it is being actively deployed in browsers. However, a number of privacy-related challenges remain. In this paper we propose practical solutions to two issues. First, we develop a mechanism that enables web browsers to audit a CT log without violating user privacy. Second, we extend CT to support non-public subdomains.

  9. Transparent conducting oxide nanotubes

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

    2014-09-01

    Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

  10. Transparency -- Some observations

    International Nuclear Information System (INIS)

    Houck, F.

    1994-01-01

    The increasingly popular term transparency has been used throughout the IAEA Safeguards Symposium to mean many things to many people. It has rather little utility as a catch-all term or buzz word. A precise definition of transparency is in order. In this paper, transparency is the provision to the IAEA of additional information for which the IAEA has an identified use and includes any associated increased IAEA access to sue the information. In 1993, the IAEA Board endorsed very specific proposals for provision to the IAEA of additional information on international nuclear transfers. It also made specific decisions on verification in the context of tis earlier confirmation of the very sweeping access rights for special inspections outlined by the director general. Additional information to the IAEA has two potential practical uses. First, it could help identify inconsistencies within the entirety of the information available to the IAEA, including information from inspections. These inconsistencies could be an indication of some violation of safeguards undertakings. Second, a declaration of the Member State could facilitate IAEA interpretation of analyses of other information or facilitate resolution of ambiguities. In these respects, additional information is not different from currently used information. When considering seeking specific additional information, the IAEA must balance the potential contribution of the information and its expected costs

  11. 76 FR 1180 - FDA Transparency Initiative: Improving Transparency to Regulated Industry

    Science.gov (United States)

    2011-01-07

    ...] FDA Transparency Initiative: Improving Transparency to Regulated Industry AGENCY: Food and Drug... the Transparency Initiative, the Food and Drug Administration (FDA) is announcing the availability of a report entitled ``FDA Transparency Initiative: Improving Transparency to Regulated Industry.'' The...

  12. Identification and Quantification of Oxidoselina-1,3,7(11-Trien-8-One and Cyanidin-3-Glucoside as One of the Major Volatile and Non-Volatile Low-Molecular-Weight Constituents in Pitanga Pulp.

    Directory of Open Access Journals (Sweden)

    Denise Josino Soares

    Full Text Available The pulp of pitanga (Eugenia uniflora L. is used to prepare pitanga juice. However, there are no reports on the identification and quantification of the main constituents in pitanga pulp. The aim of this study was to identify and quantify the major volatile and non-volatile low-molecular-weight constituents of the pulp. Isolation of volatile compounds was performed by solvent-assisted flavor evaporation technique. Characterization of the main volatile and non-volatile constituents was performed by GC-MS, LC-MS and NMR spectroscopy. For quantitative measurements, the main volatile compound needed to be isolated from pitanga pulp to obtain a commercially not available reference standard. Cyanidin-3-glucoside was determined as one of the most abundant non-volatile pulp compound yielding 53.8% of the sum of the intensities of all ions detected by LC-MS. Quantification of cyanidin-3-glucoside in pitanga pulp resulted in a concentration of 344 ± 66.4 μg/mL corresponding to 688 ± 133 μg/g dried pulp and 530 ± 102 μg/g fruit. For the volatile fraction, oxidoselina-1,3,7(11-trien-8-one was identified as the main volatile pulp constituent (27.7% of the sum of the intensities of all ions detected by GC-MS, reaching a concentration of 89.0 ± 16.9 μg/mL corresponding to 1.34 ± 0.25 μg/g fresh pulp and 1.03 ± 0.19 μg/g fruit. The results provide quantitative evidence for the occurrence of an anthocyanin and an oxygenated sesquiterpene as one of the major volatile and non-volatile low-molecular-weight compounds in pitanga pulp.

  13. Identification and Quantification of Oxidoselina-1,3,7(11)-Trien-8-One and Cyanidin-3-Glucoside as One of the Major Volatile and Non-Volatile Low-Molecular-Weight Constituents in Pitanga Pulp.

    Science.gov (United States)

    Josino Soares, Denise; Pignitter, Marc; Ehrnhöfer-Ressler, Miriam Margit; Walker, Jessica; Montenegro Brasil, Isabella; Somoza, Veronika

    2015-01-01

    The pulp of pitanga (Eugenia uniflora L.) is used to prepare pitanga juice. However, there are no reports on the identification and quantification of the main constituents in pitanga pulp. The aim of this study was to identify and quantify the major volatile and non-volatile low-molecular-weight constituents of the pulp. Isolation of volatile compounds was performed by solvent-assisted flavor evaporation technique. Characterization of the main volatile and non-volatile constituents was performed by GC-MS, LC-MS and NMR spectroscopy. For quantitative measurements, the main volatile compound needed to be isolated from pitanga pulp to obtain a commercially not available reference standard. Cyanidin-3-glucoside was determined as one of the most abundant non-volatile pulp compound yielding 53.8% of the sum of the intensities of all ions detected by LC-MS. Quantification of cyanidin-3-glucoside in pitanga pulp resulted in a concentration of 344 ± 66.4 μg/mL corresponding to 688 ± 133 μg/g dried pulp and 530 ± 102 μg/g fruit. For the volatile fraction, oxidoselina-1,3,7(11)-trien-8-one was identified as the main volatile pulp constituent (27.7% of the sum of the intensities of all ions detected by GC-MS), reaching a concentration of 89.0 ± 16.9 μg/mL corresponding to 1.34 ± 0.25 μg/g fresh pulp and 1.03 ± 0.19 μg/g fruit. The results provide quantitative evidence for the occurrence of an anthocyanin and an oxygenated sesquiterpene as one of the major volatile and non-volatile low-molecular-weight compounds in pitanga pulp.

  14. A Survey of Phase Change Memory Systems

    Institute of Scientific and Technical Information of China (English)

    夏飞; 蒋德钧; 熊劲; 孙凝晖

    2015-01-01

    As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

  15. Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

    Science.gov (United States)

    MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

    2011-01-01

    NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

  16. Perceptual transparency from image deformation.

    Science.gov (United States)

    Kawabe, Takahiro; Maruya, Kazushi; Nishida, Shin'ya

    2015-08-18

    Human vision has a remarkable ability to perceive two layers at the same retinal locations, a transparent layer in front of a background surface. Critical image cues to perceptual transparency, studied extensively in the past, are changes in luminance or color that could be caused by light absorptions and reflections by the front layer, but such image changes may not be clearly visible when the front layer consists of a pure transparent material such as water. Our daily experiences with transparent materials of this kind suggest that an alternative potential cue of visual transparency is image deformations of a background pattern caused by light refraction. Although previous studies have indicated that these image deformations, at least static ones, play little role in perceptual transparency, here we show that dynamic image deformations of the background pattern, which could be produced by light refraction on a moving liquid's surface, can produce a vivid impression of a transparent liquid layer without the aid of any other visual cues as to the presence of a transparent layer. Furthermore, a transparent liquid layer perceptually emerges even from a randomly generated dynamic image deformation as long as it is similar to real liquid deformations in its spatiotemporal frequency profile. Our findings indicate that the brain can perceptually infer the presence of "invisible" transparent liquids by analyzing the spatiotemporal structure of dynamic image deformation, for which it uses a relatively simple computation that does not require high-level knowledge about the detailed physics of liquid deformation.

  17. Transparent ultraviolet photovoltaic cells.

    Science.gov (United States)

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  18. Towards energy transparent factories

    CERN Document Server

    Posselt, Gerrit

    2016-01-01

    This monograph provides a methodological approach for establishing demand-oriented levels of energy transparency of factories. The author presents a systematic indication of energy drivers and cost factors, taking into account the interdependencies between facility and production domains. Particular attention is given to energy flow metering and monitoring. Readers will also be provided with an in-depth description of a planning tool which allows for systematically deriving suitable metering points in complex factory environments. The target audience primarily comprises researchers and experts in the field of factory planning, but the book may also be beneficial for graduate students.

  19. Illusionary Transparency? Oil Revenues, Information Disclosure, and Transparency

    OpenAIRE

    Ofori, Jerome Jeffison; Lujala, Päivi

    2015-01-01

    xperience shows that discovery of valuable natural resources can become a curse rather than a blessing, and transparency has been identified as key to better resource governance because it can limit opportunities for corruption and mismanagement. This article shows that information disclosure, in which many governments and donor institutions engage, does not automatically translate into transparency. Ghana has embedded transparency as one of its key principles in oil management. However, fiel...

  20. The transparency trap.

    Science.gov (United States)

    Bernstein, Ethan

    2014-10-01

    To promote accountability, productivity, and shared learning, many organizations create open work environments and gather reams of data on how individuals spend their time. A few years ago, HBS professor Ethan Bernstein set out to find empirical evidence that such approaches improve organizational performance. What he discovered is that this kind of transparency often has an unintended consequence: It can leave employees feeling vulnerable and exposed. When that happens, they conceal any conduct that deviates from the norm so that they won't have to explain it. Unrehearsed, experimental behaviors sometimes stop altogether. But Bernstein also discovered organizations that had established zones of privacy within open environments by setting four types of boundaries: around teams, between feedback and evaluation, between decision rights and improvement rights, and around periods of experimentation. Moreover, across several studies, the companies that had done all this were the ones that consistently got the most creative, efficient, and thoughtful work from their employees. Bernstein's conclusion? By balancing transparency and privacy, organizations can capture the benefits of both, and encourage just the right amount of "positive deviance" needed to increase innovation and productivity.

  1. Corneal structure and transparency

    Science.gov (United States)

    Meek, Keith M.; Knupp, Carlo

    2015-01-01

    The corneal stroma plays several pivotal roles within the eye. Optically, it is the main refracting lens and thus has to combine almost perfect transmission of visible light with precise shape, in order to focus incoming light. Furthermore, mechanically it has to be extremely tough to protect the inner contents of the eye. These functions are governed by its structure at all hierarchical levels. The basic principles of corneal structure and transparency have been known for some time, but in recent years X-ray scattering and other methods have revealed that the details of this structure are far more complex than previously thought and that the intricacy of the arrangement of the collagenous lamellae provides the shape and the mechanical properties of the tissue. At the molecular level, modern technologies and theoretical modelling have started to explain exactly how the collagen fibrils are arranged within the stromal lamellae and how proteoglycans maintain this ultrastructure. In this review we describe the current state of knowledge about the three-dimensional stromal architecture at the microscopic level, and about the control mechanisms at the nanoscopic level that lead to optical transparency. PMID:26145225

  2. Lattice Transparency of Graphene.

    Science.gov (United States)

    Chae, Sieun; Jang, Seunghun; Choi, Won Jin; Kim, Youn Sang; Chang, Hyunju; Lee, Tae Il; Lee, Jeong-O

    2017-03-08

    Here, we demonstrated the transparency of graphene to the atomic arrangement of a substrate surface, i.e., the "lattice transparency" of graphene, by using hydrothermally grown ZnO nanorods as a model system. The growth behaviors of ZnO nanocrystals on graphene-coated and uncoated substrates with various crystal structures were investigated. The atomic arrangements of the nucleating ZnO nanocrystals exhibited a close match with those of the respective substrates despite the substrates being bound to the other side of the graphene. By using first-principles calculations based on density functional theory, we confirmed the energetic favorability of the nucleating phase following the atomic arrangement of the substrate even with the graphene layer present in between. In addition to transmitting information about the atomic lattice of the substrate, graphene also protected its surface. This dual role enabled the hydrothermal growth of ZnO nanorods on a Cu substrate, which otherwise dissolved in the reaction conditions when graphene was absent.

  3. Flexible transparent electrode

    Science.gov (United States)

    Demiryont, Hulya; Shannon, Kenneth C., III; Moorehead, David; Bratcher, Matthew

    2011-06-01

    This paper presents the properties of the EclipseTECTM transparent conductor. EclipseTECTM is a room temperature deposited nanostructured thin film coating system comprised of metal-oxide semiconductor elements. The system possesses metal-like conductivity and glass-like transparency in the visible region. These highly conductive TEC films exhibit high shielding efficiency (35dB at 1 to 100GHz). EclipseTECTM can be deposited on rigid or flexible substrates. For example, EclipseTECTM deposited on polyethylene terephthalate (PET) is extremely flexible that can be rolled around a 9mm diameter cylinder with little or no reduction in electrical conductivity and that can assume pre-extension states after an applied stress is relieved. The TEC is colorless and has been tailored to have high visible transmittance which matches the eye sensitivity curve and allows the viewing of true background colors through the coating. EclipseTECTM is flexible, durable and can be tailored at the interface for applications such as electron- or hole-injecting OLED electrodes as well as electrodes in flexible displays. Tunable work function and optical design flexibility also make EclipseTECTM well-suited as a candidate for grid electrode replacement in next-generation photovoltaic cells.

  4. Positron annihilation in transparent ceramics

    Science.gov (United States)

    Husband, P.; Bartošová, I.; Slugeň, V.; Selim, F. A.

    2016-01-01

    Transparent ceramics are emerging as excellent candidates for many photonic applications including laser, scintillation and illumination. However achieving perfect transparency is essential in these applications and requires high technology processing and complete understanding for the ceramic microstructure and its effect on the optical properties. Positron annihilation spectroscopy (PAS) is the perfect tool to study porosity and defects. It has been applied to investigate many ceramic structures; and transparent ceramics field may be greatly advanced by applying PAS. In this work positron lifetime (PLT) measurements were carried out in parallel with optical studies on yttrium aluminum garnet transparent ceramics in order to gain an understanding for their structure at the atomic level and its effect on the transparency and light scattering. The study confirmed that PAS can provide useful information on their microstructure and guide the technology of manufacturing and advancing transparent ceramics.

  5. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  6. Positron annihilation in transparent ceramics

    International Nuclear Information System (INIS)

    Husband, P; Selim, F A; Bartošová, I; Slugeň, V

    2016-01-01

    Transparent ceramics are emerging as excellent candidates for many photonic applications including laser, scintillation and illumination. However achieving perfect transparency is essential in these applications and requires high technology processing and complete understanding for the ceramic microstructure and its effect on the optical properties. Positron annihilation spectroscopy (PAS) is the perfect tool to study porosity and defects. It has been applied to investigate many ceramic structures; and transparent ceramics field may be greatly advanced by applying PAS. In this work positron lifetime (PLT) measurements were carried out in parallel with optical studies on yttrium aluminum garnet transparent ceramics in order to gain an understanding for their structure at the atomic level and its effect on the transparency and light scattering. The study confirmed that PAS can provide useful information on their microstructure and guide the technology of manufacturing and advancing transparent ceramics. (paper)

  7. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica; De Wolf, Stefaan; Woods-Robinson, Rachel; Ager, Joel W.; Ballif, Christophe

    2017-01-01

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  8. Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

    International Nuclear Information System (INIS)

    Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

    2008-01-01

    We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

  9. Solution-processed flexible NiO resistive random access memory device

    Science.gov (United States)

    Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

    2018-04-01

    Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

  10. Preparation and characterization of Sb2Se3 devices for memory applications

    Science.gov (United States)

    Shylashree, N.; Uma B., V.; Dhanush, S.; Abachi, Sagar; Nisarga, A.; Aashith, K.; Sangeetha B., G.

    2018-05-01

    In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET and RESET state is shown by the I-V characterization. The change of phase was studied using R-V characterization. Different fundamental modes were also identified using Raman spectroscopy.

  11. Budget transparency in local governments

    OpenAIRE

    Giménez Perona, Paloma

    2014-01-01

    Treball Final de Grau en Finances i Comptabilitat. Codi: FC1049. Curs acadèmic 2013-2014 This work will study the socio-demographic determinants, political, budgetary and economic, that affect the transparency of local entities. To perform the study, we have chosen the transparency index data for the 110 largest municipalities of Spain, in 2012 has been chosen from the information offered by the website of the organization Transparency International Spain. The results indica...

  12. Aircraft Lighting and Transparency Lab

    Data.gov (United States)

    Federal Laboratory Consortium — The Advanced Lighting and Transparencies with Night Combat Lab performs radiometric and photometric measurements of cockpit lighting and displays. Evaluates the day,...

  13. Transparent lithium-ion batteries

    KAUST Repository

    Yang, Y.

    2011-07-25

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh/L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries.

  14. High Temperature Transparent Furnace Development

    Science.gov (United States)

    Bates, Stephen C.

    1997-01-01

    This report describes the use of novel techniques for heat containment that could be used to build a high temperature transparent furnace. The primary objective of the work was to experimentally demonstrate transparent furnace operation at 1200 C. Secondary objectives were to understand furnace operation and furnace component specification to enable the design and construction of a low power prototype furnace for delivery to NASA in a follow-up project. The basic approach of the research was to couple high temperature component design with simple concept demonstration experiments that modify a commercially available transparent furnace rated at lower temperature. A detailed energy balance of the operating transparent furnace was performed, calculating heat losses through the furnace components as a result of conduction, radiation, and convection. The transparent furnace shells and furnace components were redesigned to permit furnace operation at at least 1200 C. Techniques were developed that are expected to lead to significantly improved heat containment compared with current transparent furnaces. The design of a thermal profile in a multizone high temperature transparent furnace design was also addressed. Experiments were performed to verify the energy balance analysis, to demonstrate some of the major furnace improvement techniques developed, and to demonstrate the overall feasibility of a high temperature transparent furnace. The important objective of the research was achieved: to demonstrate the feasibility of operating a transparent furnace at 1200 C.

  15. Transparent lithium-ion batteries

    Science.gov (United States)

    Yang, Yuan; Jeong, Sangmoo; Hu, Liangbing; Wu, Hui; Lee, Seok Woo; Cui, Yi

    2011-01-01

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh/L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries. PMID:21788483

  16. Canadian perspectives in evaluating transparency

    International Nuclear Information System (INIS)

    Herwig, L.

    2007-01-01

    The Canadian Nuclear Safety Commission's mission is to regulate the use of nuclear energy and materials to protect the health, safety, and security of Canadians and the environment, as well as to respect Canada's international commitments on the peaceful use of nuclear energy. In 2001, the CNSC established a vision to be one of the best nuclear regulators in the world and established four strategic priorities of effectiveness, transparency, excellence in staff, and efficiency. While fulfilling a very comprehensive mandate, the CNSC operates with a. very clear vision of its clientele - the Canadian people. That commitment guides every employee and every action of the CNSC and ensures a firm commitment to transparency. The presentation will begin with a brief overview of the worldwide context of transparency and transparency measurement, with a look at what lessons can be learned from other organizations and initiatives. It will look broadly at the Canadian context and the government framework that establishes transparency, including the keystone legislation of the Access to Information Act. The presentation will then focus on the Canadian Nuclear Safety Commission. The CNSC is firmly committed to putting additional measures in place to ensure transparency, which is being done concurrently with an overall organisational performance measurement system. It is within this framework that the presentation will address the transparency efforts at the CNSC as well transparency measurement activities. And, finally, the presentation will look at future directions for transparency and its measurement at the CNSC. (author)

  17. Transparency through the Internet

    Energy Technology Data Exchange (ETDEWEB)

    Haginoya, Tohru [Inst. of Nuclear Materials Management, Japan Chapter, Tokyo (Japan)

    1998-07-01

    Many countries, especially developed countries have their 'Home Pages' and disclose their activities openly including nuclear activities. These information give, to some extent, the transparency of countries. The annual report of the IAEA can be found in its home page, reports describe its safeguards activities including facilities under its safeguards together with the status of 'subsidiary arrangements'. The Atomic Energy White Papers of the STA home pages show its nuclear activities and nuclear material. Details of safeguards related information are obtained by analyzing these home pages and find some information inconsistent each other. In connection with Strengthened Safeguards system' , non-nuclear items such as zirconium, heavy water or their manufacturing organizations which are subject to the safeguards system would be retrieved by using 'search engines' through the internet. (author)

  18. Transparency through the Internet

    International Nuclear Information System (INIS)

    Haginoya, Tohru

    1998-01-01

    Many countries, especially developed countries have their 'Home Pages' and disclose their activities openly including nuclear activities. These information give, to some extent, the transparency of countries. The annual report of the IAEA can be found in its home page, reports describe its safeguards activities including facilities under its safeguards together with the status of 'subsidiary arrangements'. The Atomic Energy White Papers of the STA home pages show its nuclear activities and nuclear material. Details of safeguards related information are obtained by analyzing these home pages and find some information inconsistent each other. In connection with Strengthened Safeguards system' , non-nuclear items such as zirconium, heavy water or their manufacturing organizations which are subject to the safeguards system would be retrieved by using 'search engines' through the internet. (author)

  19. Macroscopic Optomechanically Induced Transparency

    Science.gov (United States)

    Pate, Jacob; Castelli, Alessandro; Martinez, Luis; Thompson, Johnathon; Chiao, Ray; Sharping, Jay

    Optomechanically induced transparency (OMIT) is an effect wherein the spectrum of a cavity resonance is modified through interference between coupled excitation pathways. In this work we investigate a macroscopic, 3D microwave, superconducting radio frequency (SRF) cavity incorporating a niobium-coated, silicon-nitride membrane as the flexible boundary. The boundary supports acoustic vibrational resonances, which lead to coupling with the microwave resonances of the SRF cavity. The theoretical development and physical understanding of OMIT for our macroscopic SRF cavity is the same as that for other recently-reported OMIT systems despite vastly different optomechanical coupling factors and device sizes. Our mechanical oscillator has a coupling factor of g0 = 2 π . 1 ×10-5 Hz and is roughly 38 mm in diameter. The Q = 5 ×107 for the SRF cavity allows probing of optomechanical effects in the resolved sideband regime.

  20. Transparency and control

    International Nuclear Information System (INIS)

    2001-01-01

    After having outlined some lessons learnt after the Chernobyl accident, notably the facts that risk assessment and management were not separated, that radioactivity measurements have suffered from a lack of means and of preparedness, and that there has been few information exchanged between the different concerned countries, this document presents the four international conventions which have been negotiated after this accident (they concern the notification, assistance, safety, safety of fuel management and of radioactive wastes). It discusses the lessons learnt in France, the credibility of information and the confidence in authorities, the evolution of transparency and information in France and in the rest of the World, the transposition of the Arhus Convention in the communautary and national law, the innovating European approaches, and the evolutions in France

  1. Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

    Directory of Open Access Journals (Sweden)

    Luís Vitório Cargnini

    2014-08-01

    Full Text Available Static random access memory (SRAM is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM is a candidate technology to replace SRAM, assuming appropriate dimensioning given an operating threshold voltage. The write current of spin transfer torque (STT-MRAM is a known limitation; however, this has been recently mitigated by leveraging perpendicular magnetic tunneling junctions. In this article, we present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off policies and leakage current optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of embedded systems, due to the higher densities and reduced leakage of MRAM.We demonstrate that adopting STT-MRAM in L1 and L2 caches mitigates the impact of higher write latencies and increased current draw due to the use of MRAM. With the correct system-on-chip (SoC design, we believe that STT-MRAM is a viable alternative to SRAM, which minimizes leakage current and the total power consumed by the SoC.

  2. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  3. Nanocellulose reinforcement of Transparent Composites

    Science.gov (United States)

    Joshua Steele; Hong Dong; James F. Snyder; Josh A. Orlicki; Richard S. Reiner; Alan W. Rudie

    2012-01-01

    In this work, we evaluate the impact of nanocellulose reinforcement on transparent composite properties. Due to the small diameter, high modulus, and high strength of cellulose nanocrystals, transparent composites that utilize these materials should show improvement in bulk mechanical performances without a corresponding reduction in optical properties. In this study...

  4. Student Perceptions of Teaching Transparency

    Science.gov (United States)

    Anderson, Alecia D.; Hunt, Andrea N.; Powell, Rachel E.; Dollar, Cindy Brooks

    2013-01-01

    The authors discuss the relationship between teaching transparency and active learning through the perspectives of their students. Active learning directly engages students in the learning process while transparency involves the instructor's divulgence of logic regarding course organization and activity choices. After utilizing these teaching…

  5. Transparency as an ethical safeguard

    NARCIS (Netherlands)

    Spagnolli, Anna; Frank, Lily E.; Haselager, Pim; Kirsh, David; Ham, Jaap; Spagnolli, Anna; Blankertz, Benjamin; Gamberini, Luciano; Jacucci, Giulio

    2018-01-01

    Transparency seems to represent a solution to many ethic issues generated by systems that collect implicit data from users to model the user themselves based on programmed criteria. However, making such systems transparent -- besides being a major technical challenge - risks raising more issues than

  6. Robot transparency, trust and utility

    Science.gov (United States)

    Wortham, Robert H.; Theodorou, Andreas

    2017-07-01

    As robot reasoning becomes more complex, debugging becomes increasingly hard based solely on observable behaviour, even for robot designers and technical specialists. Similarly, non-specialist users have difficulty creating useful mental models of robot reasoning from observations of robot behaviour. The EPSRC Principles of Robotics mandate that our artefacts should be transparent, but what does this mean in practice, and how does transparency affect both trust and utility? We investigate this relationship in the literature and find it to be complex, particularly in nonindustrial environments where, depending on the application and purpose of the robot, transparency may have a wider range of effects on trust and utility. We outline our programme of research to support our assertion that it is nevertheless possible to create transparent agents that are emotionally engaging despite having a transparent machine nature.

  7. Phenomenal transparency in achromatic checkerboards.

    Science.gov (United States)

    Masin, S C

    1999-04-01

    The study explored the luminance relations that determine the occurrence of achromatic transparency in phenomenal surfaces on complex backgrounds. Let the luminances of the left and right parts of a transparent surface on a bipartite background and those of the left and right parts of the bipartite background be p and q and m and n, respectively. Metelli proposed that this surface looks transparent when the rule p q if m > n) is satisfied, and Masin and Fukuda that it looks transparent when the inclusion rule is satisfied, that is, when p epsilon (m, q) or q epsilon (p, n). These rules also apply to achromatic checkerboards formed by one checkerboard enclosed in another checkerboard. This study shows that only the inclusion rule correctly predicted the occurrence of transparency in these checkerboards.

  8. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  9. Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

    Science.gov (United States)

    Briggs, Benjamin D.

    The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

  10. Lower Bounds in the Asymmetric External Memory Model

    DEFF Research Database (Denmark)

    Jacob, Riko; Sitchinava, Nodari

    2017-01-01

    Motivated by the asymmetric read and write costs of emerging non-volatile memory technologies, we study lower bounds for the problems of sorting, permuting and multiplying a sparse matrix by a dense vector in the asymmetric external memory model (AEM). Given an AEM with internal (symmetric) memory...... of size M, transfers between symmetric and asymmetric memory in blocks of size B and the ratio ω between write and read costs, we show Ω(min (N, ωN/B logω M/B N/B) lower bound for the cost of permuting N input elements. This lower bound also applies to the problem of sorting N elements. This proves...

  11. Optical quantum memory

    Science.gov (United States)

    Lvovsky, Alexander I.; Sanders, Barry C.; Tittel, Wolfgang

    2009-12-01

    Quantum memory is essential for the development of many devices in quantum information processing, including a synchronization tool that matches various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a mechanism to convert heralded photons to on-demand photons. In addition to quantum computing, quantum memory will be instrumental for implementing long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied, such as optical delay lines, cavities and electromagnetically induced transparency, as well as schemes that rely on photon echoes and the off-resonant Faraday interaction. Here, we report on state-of-the-art developments in the field of optical quantum memory, establish criteria for successful quantum memory and detail current performance levels.

  12. Selectively reflective transparent sheets

    Science.gov (United States)

    Waché, Rémi; Florescu, Marian; Sweeney, Stephen J.; Clowes, Steven K.

    2015-08-01

    We investigate the possibility to selectively reflect certain wavelengths while maintaining the optical properties on other spectral ranges. This is of particular interest for transparent materials, which for specific applications may require high reflectivity at pre-determined frequencies. Although there exist currently techniques such as coatings to produce selective reflection, this work focuses on new approaches for mass production of polyethylene sheets which incorporate either additives or surface patterning for selective reflection between 8 to 13 μ m. Typical additives used to produce a greenhouse effect in plastics include particles such as clays, silica or hydroxide materials. However, the absorption of thermal radiation is less efficient than the decrease of emissivity as it can be compared with the inclusion of Lambertian materials. Photonic band gap engineering by the periodic structuring of metamaterials is known in nature for producing the vivid bright colors in certain organisms via strong wavelength-selective reflection. Research to artificially engineer such structures has mainly focused on wavelengths in the visible and near infrared. However few studies to date have been carried out to investigate the properties of metastructures in the mid infrared range even though the patterning of microstructure is easier to achieve. We present preliminary results on the diffuse reflectivity using FDTD simulations and analyze the technical feasibility of these approaches.

  13. Nuclear deterrence: which environmental transparency?

    International Nuclear Information System (INIS)

    Cherief, Hamza

    2012-01-01

    This article addresses the field of nuclear geopolitics. The author discusses the tensions between the principle of transparency regarding environmental issues on the one hand, and the protection of nuclear deterrence as instrument of power on the other hand. According to the French law, the preservation of nuclear power instruments means the acknowledgement of a legal regime which is specific to national defence requirements in terms of secret and right to information. Thus, the author discusses the constitutional limitations of the environmental transparency obligation for the protection of Nation's fundamental interests. Then, by commenting the Rainbow Warrior affair, the author highlights the exceptional limitations of the transparency requirement regarding nuclear issues

  14. Transparency masters for mathematics revealed

    CERN Document Server

    Berman, Elizabeth

    1980-01-01

    Transparency Masters for Mathematics Revealed focuses on master diagrams that can be used for transparencies for an overhead projector or duplicator masters for worksheets. The book offers information on a compilation of master diagrams prepared by John R. Stafford, Jr., audiovisual supervisor at the University of Missouri at Kansas City. Some of the transparencies are designed to be shown horizontally. The initial three masters are number lines and grids that can be used in a mathematics course, while the others are adaptations of text figures which are slightly altered in some instances. The

  15. Transparent Conductive Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-22

    The objectives of this program between UT-Battelle, LLC (the ''Contractor'') and (Battelle Memorial Institute) (the "Participant") were directed towards achieving significant improvement: in the electrical conductivity and optical/infrared transmission of single-wall carbon nanotube (SWNT)-based composite materials. These materials will be used in coating applications that range from aircraft canopies to display applications. The goal of the project was to obtain supported mats of SWNTs with sheet conductivities approaching 10 ohms/square combined with high optical transmission (>85% transmission at 550 nm), thereby permitting their application as a replacement for indium tin oxide (ITO) in a variety of applications such as flexible displays.

  16. Strengthening Transparency in Regulatory Science

    Science.gov (United States)

    Where available and appropriate, EPA will use peer-reviewed information, standardized test methods, consistent data evaluation procedures, and good laboratory practices to ensure transparent, understandable, and reproducible scientific assessments.

  17. Transparency in Cooperative Online Education

    DEFF Research Database (Denmark)

    Dalsgaard, Christian; Paulsen, Morten Flate

    2009-01-01

    The purpose of this article is to discuss the following question: What is the potential of social networking within cooperative online education? Social networking does not necessarily involve communication, dialogue, or collaboration. Instead, the authors argue that transparency is a unique...... feature of social networking services. Transparency gives students insight into each other’s actions. Cooperative learning seeks to develop virtual learning environments that allow students to have optimal individual freedom within online learning communities. This article demonstrates how cooperative...... learning can be supported by transparency. To illustrate this with current examples, the article presents NKI Distance Education’s surveys and experiences with cooperative learning. The article discusses by which means social networking and transparency may be utilized within cooperative online education...

  18. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  19. Optical memory

    Science.gov (United States)

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  20. Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

    Science.gov (United States)

    Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

    2012-07-03

    Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Lines that induce phenomenal transparency.

    Science.gov (United States)

    Grieco, Alba; Roncato, Sergio

    2005-01-01

    Three neighbouring opaque surfaces may appear split into two layers, one transparent and one opaque beneath, if an outline contour is drawn that encompasses two of them. The phenomenon was originally observed by Kanizsa [1955 Rivista di Psicologia 69 3-19; 1979 Organization in Vision: Essays on Gestalt Psychology (New York: Praeger)], for the case where an outline contour is drawn to encompass one of the two parts of a bicoloured figure and a portion of a background of lightest (or darkest) luminance. Preliminary observations revealed that the outline contour yields different effects: in addition to the stratification into layers described by Kanizsa, a second split, opposite in depth order, may occur when the outline contour is close in luminance to one of the three surfaces. An initial experiment was designed to investigate what conditions give rise to the two phenomenal transparencies: this led to the conclusion that an outline contour superimposed on an opaque surface causes this surface to emerge as a transparent layer when the luminances of the contour and the surface differ, in absolute value, by no more than 13.2 cd m(-2). We have named this phenomenon 'transparency of the intercepted surface', to distinguish it from the phenomenal transparency arising when the contour and surface are very different in luminance. When such a difference exists, the contour acts as a factor of surface definition and grouping: the portion of the homogeneous surface it bounds emerges as a fourth surface and groups with a nearby surface if there is one close in luminance. The transparency phenomena ('transparency of the contoured surface') perceived in this context conform to the constraints of Metelli's model, as demonstrated by a second experiment, designed to gather 'opacity' ratings of stimuli. The observer judgments conformed to the values predicted by Metelli's formula for perceived degree of transparency, alpha. The role of the outline contour in conveying figural and

  2. A Concise Dictionary of Transparency

    Directory of Open Access Journals (Sweden)

    Jakub Misun

    2013-01-01

    Full Text Available The article discusses an essay collection by Marek Bieńczyk, Przeźroczystość [Transparency]. The concept, placed in various context, shows various aspects and is seen in various shades. The author does not put forward a statement, but rather proposes a work to be done: to determine the modality of transparency. The concept initially seems to be mainly epistemological: the cognizant subject would like to make the world transparent, to discover all possible mysteries. Before that, however, the subject must know itself, and here the dream of trans­parency also plays the key role. Lack of epistemological transparency is the main cause of melancholy and its reverse — hysteria. The concept turns out to be important in the domain of love — the loer thinks that (she knows the desired person more better anybody else, that (she has entirely penetrated the subjectivity of the Other. Ultimately, however, the dream of transparency goes down to a slow demise of the subject: as self-discovery progresses, there is less and less of the discoverer. In conclusion of this work, the border of modality of the concept turns out to be horrifyingly obvious. The desire for transparency consequently searches not for knowledge, but for an escape whose name is death.

  3. Semi-transparent solar cells

    International Nuclear Information System (INIS)

    Sun, J; Jasieniak, J J

    2017-01-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

  4. Lignin-Retaining Transparent Wood.

    Science.gov (United States)

    Li, Yuanyuan; Fu, Qiliang; Rojas, Ramiro; Yan, Min; Lawoko, Martin; Berglund, Lars

    2017-09-11

    Optically transparent wood, combining optical and mechanical performance, is an emerging new material for light-transmitting structures in buildings with the aim of reducing energy consumption. One of the main obstacles for transparent wood fabrication is delignification, where around 30 wt % of wood tissue is removed to reduce light absorption and refractive index mismatch. This step is time consuming and not environmentally benign. Moreover, lignin removal weakens the wood structure, limiting the fabrication of large structures. A green and industrially feasible method has now been developed to prepare transparent wood. Up to 80 wt % of lignin is preserved, leading to a stronger wood template compared to the delignified alternative. After polymer infiltration, a high-lignin-content transparent wood with transmittance of 83 %, haze of 75 %, thermal conductivity of 0.23 W mK -1 , and work-tofracture of 1.2 MJ m -3 (a magnitude higher than glass) was obtained. This transparent wood preparation method is efficient and applicable to various wood species. The transparent wood obtained shows potential for application in energy-saving buildings. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  5. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  6. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  7. Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Heinonen, O.

    2014-10-05

    Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

  8. Scheduling and Optimization of Fault-Tolerant Embedded Systems with Transparency/Performance Trade-Offs

    DEFF Research Database (Denmark)

    Izosimov, Viacheslav; Pop, Paul; Eles, Petru

    2012-01-01

    In this article, we propose a strategy for the synthesis of fault-tolerant schedules and for the mapping of fault-tolerant applications. Our techniques handle transparency/performance trade-offs and use the faultoccurrence information to reduce the overhead due to fault tolerance. Processes...... and messages are statically scheduled, and we use process reexecution for recovering from multiple transient faults. We propose a finegrained transparent recovery, where the property of transparency can be selectively applied to processes and messages. Transparency hides the recovery actions in a selected part...... of the application so that they do not affect the schedule of other processes and messages. While leading to longer schedules, transparent recovery has the advantage of both improved debuggability and less memory needed to store the faulttolerant schedules....

  9. Interaction between social influence and payoff transparency.

    Science.gov (United States)

    Zhou, Xinyue; Xie, Wenwen; Ye, Maolin

    2014-02-01

    Social influence and payoff transparency interact with each other to influence decision making. Social influence masks payoff transparency, and lacking transparency drives people to seek social influence. Moreover, our survey supports our claim by showing that social influence and payoff transparency correlate with each other (r(53) = -.71). Bentley et al.'s model can be revised to accommodate the covariance.

  10. TED KYCIA MEMORIAL SYMPOSIUM.

    Energy Technology Data Exchange (ETDEWEB)

    LITTENBERG, L.; RUBINSTEIN, R.; SAMIOS, N.; LI, K.; GIACOMELLI, G.; MOCKETT, P.; CARROLL, A.; JOHNSON, R.; BRYMAN, D.; TIPPENS, B.

    2000-05-19

    On the afternoon of May 19 2000, a Memorial Seminar was held in the BNL physics Large Seminar Room to honor the memory of Ted Kyeia, a prominent particle physicist who had been a member of the BNL staff for 40 years. Although it was understandably a somewhat sad occasion because Ted was no longer with us, nevertheless there was much for his colleagues and friends to celebrate in recalling the outstanding contributions that he had made in those four decades. The Seminar speakers were all people who had worked with Ted during that period; each discussed one aspect of his career, but also included anecdotes and personal reminiscences. This booklet contains the Seminar program, listing the speakers, and also copies of transparencies of the talks (and one paper which was a later expansion of a talk); sadly, not all of the personal remarks appeared on the transparencies.

  11. TED KYCIA MEMORIAL SYMPOSIUM

    International Nuclear Information System (INIS)

    LITTENBERG, L.; RUBINSTEIN, R.; SAMIOS, N.; LI, K.; GIACOMELLI, G.; MOCKETT, P.; CARROLL, A.; JOHNSON, R.; BRYMAN, D.; TIPPENS, B.

    2000-01-01

    On the afternoon of May 19 2000, a Memorial Seminar was held in the BNL physics Large Seminar Room to honor the memory of Ted Kyeia, a prominent particle physicist who had been a member of the BNL staff for 40 years. Although it was understandably a somewhat sad occasion because Ted was no longer with us, nevertheless there was much for his colleagues and friends to celebrate in recalling the outstanding contributions that he had made in those four decades. The Seminar speakers were all people who had worked with Ted during that period; each discussed one aspect of his career, but also included anecdotes and personal reminiscences. This booklet contains the Seminar program, listing the speakers, and also copies of transparencies of the talks (and one paper which was a later expansion of a talk); sadly, not all of the personal remarks appeared on the transparencies

  12. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    Science.gov (United States)

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-01-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

  13. Effect of neutron and gamma irradiation on magnetic bubble memories

    International Nuclear Information System (INIS)

    Cambou, B.

    1981-06-01

    Many years of research preceeded the introduction of magnetic bubble memories (M.B.M.) into the memory components market. They are used as bulk storage memories principally for their non volatile characteristics under irradiation. A physical and technological description of MBM is given in the first part of the text together with the results of work on their vulnerability when subjected to irradiation. Permanent damage caused by neutrons and gamma radiation on thin magnetic layers is then studied. A theoretical analysis on the stability of bubbles based on the results of pulsed laser experiments is given. The stability of the information stored in a commercially available MBM subjected to neutron and gamma irradiation (MBM - TIB 203 of 92 kBits, Texas) is described in the last part of the text. The vulnerability thresholds determined for the MBM are too high for them to be used in a radioactive environment with an improved electronic control system [fr

  14. Identification of non-volatile compounds and their migration from hot melt adhesives used in food packaging materials characterized by ultra-performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry.

    Science.gov (United States)

    Vera, Paula; Canellas, Elena; Nerín, Cristina

    2013-05-01

    The identification of unknown non-volatile migrant compounds from adhesives used in food contact materials is a very challenging task because of the number of possible compounds involved, given that adhesives are complex mixtures of chemicals. The use of ultra-performance liquid chromatography coupled to quadrupole time-of-flight mass spectrometry (UPLC-MS/QTOF) is shown to be a successful tool for identifying non-targeted migrant compounds from two hot melt adhesives used in food packaging laminates. Out of the seven migrants identified and quantified, five were amides and one was a compound classified in Class II of the Cramer toxicity. None of the migration values exceeded the recommended Cramer exposure values.

  15. Issues in Canadian board transparency

    Directory of Open Access Journals (Sweden)

    Chris Bart

    2007-01-01

    Full Text Available Transparency is considered one of the principles of good corporate governance. But what does it mean – in practice – especially when it comes to Board transparency – i.e. the ability of shareholders to gain knowledge about an organization’s corporate governance practices in order to make an informed assessment of Directors’ individual and collective roles and performance. In a preliminary investigation of Board transparency practices in Canadian listed firms (using data from 2003-2004, it was found that there were wide variations in the nature and quantity of corporate governance practices disclosed. The reasons for these variations are discussed and a number of recommendations for improved disclosure are presented.

  16. Transparency of nuclear regulatory activities

    International Nuclear Information System (INIS)

    2007-01-01

    One of the main missions of nuclear regulators is to protect the public, and this cannot be completely achieved without public confidence. The more a regulatory process is transparent, the more such confidence will grow. Despite important cultural differences across countries, a number of common features characterise media and public expectations regarding any activity with an associated risk. A common understanding of transparency and main stakeholders' expectations in the field of nuclear safety were identified during this workshop, together with a number of conditions and practices aimed at improving the transparency of nuclear regulatory activities. These conditions and practices are described herein, and will be of particular interest to all those working in the nuclear regulatory field. Their implementation may, however, differ from one country to another depending on national context. (authors)

  17. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    International Nuclear Information System (INIS)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  18. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  19. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  20. Does doxastic transparency support evidentialism?

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2008-01-01

    Nishi Shah has recently argued that transparency in doxastic deliberation supports a strict version of evidentialism about epistemic reasons. I argue that Shah’s argument relies on a principle that is incompatible the strict version of evidentialism Shah wishes to advocate.......Nishi Shah has recently argued that transparency in doxastic deliberation supports a strict version of evidentialism about epistemic reasons. I argue that Shah’s argument relies on a principle that is incompatible the strict version of evidentialism Shah wishes to advocate....

  1. Color transparency: Enchantment and effort

    International Nuclear Information System (INIS)

    Miller, G.A.

    1991-01-01

    A quantum mechanical approach is used to study high momentum transfer reactions in which a nucleon is knocked out of the nucleus. We show that the nuclear interactions of the wave packet produced in such a process tend to cancel, so that the nuclear medium becomes transparent. The wave packet (ejectile)-nucleon interactions, including the production of nucleon resonances are also discussed. Color transparency effects in the (e,e'p) reaction may be significant at relatively low momentum transfer Q 2 = 3 - 6 (GeV 2 /c) 2 . 17 refs., 3 figs

  2. A FRAMEWORK FOR TRANSPARENCY IN INTERNATIONAL TRADE

    Directory of Open Access Journals (Sweden)

    Bernal Turnes, Paloma

    2015-01-01

    Full Text Available The aim of this paper is to cover the gap in literature about transparency in the context of international trade facilitation. It focuses on the importance of transparency in achieving growth in international trade and the differences between non-transparent practices and corruption in global trade. Managing the disclosure of information about rules, regulations and laws is not the only trade policy instrument where transparency becomes important. To build a framework on levels of transparency we developed a matrix classifying the transparency of each country based on ease of doing business and levels of bribery. Four different strategies are explained based on the different scenarios of transparency in international trade. The main conclusions reflect that disclosure of information is not enough to guarantee transparency and monitoring of transparency must be improved.

  3. DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-09-01

    Full Text Available To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM, spin transfer torque RAM (STT-RAM, phase change RAM (PCM and embedded DRAM (eDRAM and 2D memories designed using spin orbit torque RAM (SOT-RAM, domain wall memory (DWM and Flash memory. In addition to single-level cell (SLC designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparshmittal/destinyv2.

  4. Scientific developments of liquid crystal-based optical memory: a review

    Science.gov (United States)

    Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

    2017-01-01

    The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

  5. Why is Transparency Greenland Necessary?

    DEFF Research Database (Denmark)

    Jensen, Boris Brorman

    2012-01-01

    Greenland is facing significant changes in the composition of its economy, and is moving rapidly in the direction of becoming a commodities economy. Studies conducted by Transparency International in other parts of the world suggest that oil exploration and mining are among the areas of economic...

  6. Transparency in Cooperative Online Education

    Science.gov (United States)

    Dalsgaard, Christian; Paulsen, Morten Flate

    2009-01-01

    The purpose of this article is to discuss the following question: What is the potential of social networking within cooperative online education? Social networking does not necessarily involve communication, dialogue, or collaboration. Instead, the authors argue that "transparency" is a unique feature of social networking services.…

  7. Transparent ceramic lamp envelope materials

    Energy Technology Data Exchange (ETDEWEB)

    Wei, G C [OSRAM SYLVANIA, 71 Cherry Hill Drive, Beverly, MA 01915 (United States)

    2005-09-07

    Transparent ceramic materials with optical qualities comparable to single crystals of similar compositions have been developed in recent years, as a result of the improved understanding of powder-processing-fabrication- sintering-property inter-relationships. These high-temperature materials with a range of thermal and mechanical properties are candidate envelopes for focused-beam, short-arc lamps containing various fills operating at temperatures higher than quartz. This paper reviews the composition, structure and properties of transparent ceramic lamp envelope materials including sapphire, small-grained polycrystalline alumina, aluminium oxynitride, yttrium aluminate garnet, magnesium aluminate spinel and yttria-lanthana. A satisfactory thermal shock resistance is required for the ceramic tube to withstand the rapid heating and cooling cycles encountered in lamps. Thermophysical properties, along with the geometry, size and thickness of a transparent ceramic tube, are important parameters in the assessment of its resistance to fracture arising from thermal stresses in lamps during service. The corrosive nature of lamp-fill liquid and vapour at high temperatures requires that all lamp components be carefully chosen to meet the target life. The wide range of new transparent ceramics represents flexibility in pushing the limit of envelope materials for improved beamer lamps.

  8. Camuflagem e transparência

    Directory of Open Access Journals (Sweden)

    Maria de Fátima de A. Silveira

    2000-06-01

    Full Text Available O ensaio estabelece, a partir da compreensão de ELIADE, analogias entre alguns símbolos universais e os rituais de morte desenvolvidos pela Enfermagem, desnudando a camuflagem ali existente e apontando sua transparência como forma de enriquecer a prática profissional, beneficiando cuidadora(es e sujeitos do cuidado.

  9. Camuflagem e transparência

    Directory of Open Access Journals (Sweden)

    Maria de Fátima de A. Silveira

    Full Text Available O ensaio estabelece, a partir da compreensão de ELIADE, analogias entre alguns símbolos universais e os rituais de morte desenvolvidos pela Enfermagem, desnudando a camuflagem ali existente e apontando sua transparência como forma de enriquecer a prática profissional, beneficiando cuidadora(es e sujeitos do cuidado.

  10. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  11. Legal framework to ensure transparency

    International Nuclear Information System (INIS)

    Treier, A.

    2007-01-01

    There is a national and an international trend towards administrative transparency. This trend has not stopped at. the Swiss border. Some cantons of Switzerland have already introduced the transparency principle at the cantonal level. At the federal level, the Swiss Confederation introduced on 1 July 2006 the new Federal 'Freedom of Information Act'. Also the Swiss Federal Nuclear Safety Inspectorate (I-ISK) falls under this rule. Before introduction of this law on transparency. most of the documents of Swiss federal Administration were treated as confidential. Access rights to official documents were granted only on certain conditions and in special cases. But there is a general interest, that the public should have the possibility to ask to look at the files of the administration. Since years, the administration had no longer been able to hide behind secretiveness. For instance, the introduction of Internet brought a lot of transparency. The administration had to explain what sort of job it is actually doing and how it is doing. Also, the media were and are increasing their research for information. In this context, the new law on transparency ('Freedom of Information Act') is rather an evolution than a revolution. The Freedom of Information Act guarantees the public access to official documents. Most of the documents of the Federal Administration are public. This access can be limited, differentiated or refused in certain cases. That means that the principle of proportionality between private interests and public transparency has to be applied. The real challenge for the authority is the trade off between the public's right to access information and the industrial legitimate efforts to protect industrial and trade secrets. In the nuclear field, the international principle of transparency has also become an important national principle for Switzerland and FISK. The Swiss Nuclear Energy Act says that 'The relevant authorities shall regularly inform the general

  12. Broadband plasmon induced transparency in terahertz metamaterials

    KAUST Repository

    Zhu, Zhihua; Yang, Xu; Gu, Jianqiang; Jiang, Jun; Yue, Weisheng; Tian, Zhen; Tonouchi, Masayoshi; Han, Jiaguang; Zhang, Weili

    2013-01-01

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena

  13. Outside finance, dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    2000-01-01

    This paper studies optimal financial contracts and product market competition under a strategic transparency decision. When firms seeking outside finance resort to actively monitored debt in order to commit against opportunistic behaviour, the dominant lender can influence corporate transparency.

  14. Categories and Dimensions of Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    Transparency is a distinctive area of research across disciplines and presents significant importance for organization studies. However, transparency is rarely subject to structured and critical scrutiny and as a result its relevance for organizational analysis is underestimated. In an attempt...... to foreground the value of transparency studies, we offer an overview of the existing research and indicate two paradigmatic positions underpinning the transparency literature, namely what we term non-performative and performative approaches. The main contribution of the paper lies in this ground......, an approach which remains underexplored. Finally, we discuss some avenues for future studies of the organizing properties of transparency: the secrecy-transparency interplay, the power-transparency nexus and the transparency ‘family tree’ (i.e., intersections between multiple forms of disclosure)....

  15. Second-order nonlinearity induced transparency.

    Science.gov (United States)

    Zhou, Y H; Zhang, S S; Shen, H Z; Yi, X X

    2017-04-01

    In analogy to electromagnetically induced transparency, optomechanically induced transparency was proposed recently in [Science330, 1520 (2010)SCIEAS0036-807510.1126/science.1195596]. In this Letter, we demonstrate another form of induced transparency enabled by second-order nonlinearity. A practical application of the second-order nonlinearity induced transparency is to measure the second-order nonlinear coefficient. Our scheme might find applications in quantum optics and quantum information processing.

  16. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

  17. History and the future perspective of the ferroelectric memory; Kyoyudentai memory no rekishiteki haikei to tenbo

    Energy Technology Data Exchange (ETDEWEB)

    Tarui, Y [Waseda University, Tokyo (Japan)

    1998-10-01

    Development work is in progress on ferroelectric memory. The memory is a most suitable non-volatile memory which can be incorporated into IC cards, with its higher speed, lower voltage operation, smaller power consumption, and greater number of rewriting times than EEPROM, DRAM and SRAM. Taking as an opportunity the announcement on an experiment as performed by the authors to control semiconductor charge by using electric depolarization of ferroelectric materials, reports have been made one after another on experiments on thin metal films on TGS or BaTiO3, and experiments on semiconductor films formed on ferroelectric crystals or ceramics substrates by using vacuum deposition. In order to solve problems in ferroelectric materials, thin films of PZT and PLZT have emerged, whose good hysteresis characteristics have also been reported. Thereafter, an announcement was made on a material with bismuth layer like perovskite structure. The material is characterized with having very little film fatigue degradation after rewriting of about 10 {sup 12} times. In scaling a ferroelectric memory, if voltage is decreased in proportion with the size, the operation can be reduced proportionately according to the voltage reduction. This paper introduces a method to constitute a ferroelectric memory. 22 refs., 11 figs., 2 tabs.

  18. Multicolour fluorescent memory based on the interaction of hydroxy terphenyls with fluoride anions.

    Science.gov (United States)

    Akamatsu, Masaaki; Mori, Taizo; Okamoto, Ken; Sakai, Hideki; Abe, Masahiko; Hill, Jonathan P; Ariga, Katsuhiko

    2014-12-01

    Memory operations based on variation of a molecule's properties are important because they may lead to device miniaturization to the molecular scale or increasingly complex information processing protocols beyond the binary level. Molecular memory also introduces possibilities related to information-storage security where chemical information (or reagents) might be used as an encryption key, in this case, acidic/basic reagents. Chemical memory that possesses both volatile and non-volatile functionality requires reversible conversion between at least two chemically different stable or quasi-stable states. Here we have developed the phenol-phenoxide equilibrium of phenol fluorophores as a data storage element, which can be used to write or modulate data using chemical reagents. The properties of this system allow data to be stored and erased either in non-volatile or volatile modes. We also demonstrate non-binary switching of states made possible by preparation of  a composite containing the molecular memory elements. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Playing the numbers game: Dealing with transparency

    NARCIS (Netherlands)

    Pachidi, S.; Huysman, M.H.; Berends, Hans; van de Weerd, G.C.

    2015-01-01

    Our research focus is on unpacking the performativity of transparency in order to explain how digital technologies, formerly perceived as enablers of surveillance and control, afford opaqueness as much as transparency. We develop a sociomaterial perspective on transparency and investigate how

  20. Organizational Transparency as Myth and Metaphor

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cornelissen, Joep

    2015-01-01

    Transparency has achieved a mythical status in society. Myths are not false accounts or understandings, but deep-seated and definitive descriptions of the world that ontologically ground the ways in which we frame and see the world around us. We explore the mythical nature of transparency from...... of the transparency myth....

  1. Transparency and Oversight in Local Wellness Policies

    Science.gov (United States)

    Chriqui, Jamie F.; Chaloupka, Frank J.

    2011-01-01

    Background: Advocates have called for increased wellness policy transparency and oversight through the use of health advisory councils. This study examines (1) wellness policy transparency, (2) advisory council requirements, (3) factors associated with each, and (4) whether transparency or advisory council requirements are indicative of a stronger…

  2. Transparency in port-Hamiltonian based telemanipulation

    NARCIS (Netherlands)

    Secchi, C; Stramigioli, Stefano; Fantuzzi, C.

    2005-01-01

    After stability, transparency is the major issue in the design of a telemanipulation system. In this paper we exploit a behavioral approach in order to provide an index for the evaluation of transparency in port-Hamiltonian based teleoperators. Furthermore we provide a transparency analysis of

  3. Transparency in Port-Hamiltonian-Based Telemanipulation

    NARCIS (Netherlands)

    Secchi, Cristian; Stramigioli, Stefano; Fantuzzi, Cesare

    After stability, transparency is the major issue in the design of a telemanipulation system. In this paper, we exploit the behavioral approach in order to provide an index for the evaluation of transparency in port-Hamiltonian-based teleoperators. Furthermore, we provide a transparency analysis of

  4. Pixel masks for screen-door transparency

    NARCIS (Netherlands)

    J.D. Mulder (Jurriaan); F.C.A. Groen; J.J. van Wijk (Jack)

    1998-01-01

    textabstractRendering objects transparently gives additional insight in complex and overlapping structures. However, traditional techniques for the rendering of transparent objects such as alpha blending are not very well suited for the rendering of multiple transparent objects in dynamic scenes.

  5. Does transparent government agencies strengthen trust?

    NARCIS (Netherlands)

    Grimmelikhuijsen, S.G.

    2009-01-01

    Trust in government has been shown to be volatile in recent years and Internet transparency is seen as a solution to strengthen trust. However, critics argue that transparency will only lead to less trust, and sceptics say that it has no effect at all. This debate on transparency is lacking

  6. Electromagnetically induced transparency with quantized fields in optocavity mechanics

    International Nuclear Information System (INIS)

    Huang Sumei; Agarwal, G. S.

    2011-01-01

    We report electromagnetically induced transparency (EIT) using quantized fields in optomechanical systems. The weak probe field is a narrowband squeezed field. We present a homodyne detection of EIT in the output quantum field. We find that the EIT dip exists even though the photon number in the squeezed vacuum is at the single-photon level. The EIT with quantized fields can be seen even at temperatures on the order of 100 mK, thus paving the way for using optomechanical systems as memory elements.

  7. Target Advertising and Market Transparency

    OpenAIRE

    Stühmeier, Torben

    2012-01-01

    This paper examines the effects of increased transparency over online news sources, e.g. due to news aggregators, on online news outlets and the advertising industry. The role of news aggregators is controversially discussed, where the discussion widely points on user side effect. The present paper widens the discussion on the advertising side and shows that aggregators can help to better target advertising messages to a more homogenous group of users and, in turn, may both benefit advertiser...

  8. P -type transparent conducting oxides

    International Nuclear Information System (INIS)

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-01-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n -type, such as Sn doped In 2 O 3 , Al doped ZnO, and F doped SnO 2 . However, the development of efficient p -type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2 p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2 p orbitals with close-shell Cu 3 d 10 orbitals. This work has sparked tremendous interest in designing p -TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p -TCOs, including Cu + -based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr 3+ -based oxides (3 d 3 ) and post-transition metal oxides with lone pair state (ns 2 ). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p -type conductivity and optical properties. Device applications based on p -TCOs for transparent p – n junctions will also be briefly discussed. (topical review)

  9. When safety rhymes with transparency

    International Nuclear Information System (INIS)

    Champion, Marion; Larroque, Damien; Vandermersch, Marie

    2009-01-01

    The Transparency and Nuclear Safety Act, which took effect in 2006, requires each operator to document the measures taken to ensure nuclear safety and radiological protection and to list incidents and accidents as well as actions taken to protect the environment. This specifies the nature and limits of radioactive and non-radioactive releases, the quantity of waste to be stored at the facility, actions taken to limit waste volume, and effects on health and the environment, especially on soil and water. (authors)

  10. Transparent conductor based on aluminum nanomesh

    International Nuclear Information System (INIS)

    Kazarkin, B; Mohammed, A S; Stsiapanau, A; Zhuk, S; Satskevich, Y; Smirnov, A

    2014-01-01

    We report a transparent conductor based on Al nanomesh, which was fabricated through Al anodization and etching processes. The Al anodization was performed at low temperature condition to slow down the anodization rate to achieve the well-controlled thickness of an Al nanomesh. By careful controlling of the anodization process, we can fabricate Al nanomesh transparent conductors with different sheet resistance and optical transparency in the visible spectrum range. We shall show that Al nanomesh transparent conductor is a strong contender for a transparent conductor dominated by ITO

  11. Transparency in high-energy nuclear collisions

    International Nuclear Information System (INIS)

    Karol, P.J.

    1992-01-01

    Problems associated with transparency schemes based on sharp cutoff models are discussed. The soft spheres model of hadron-nucleus and nucleus-nucleus collisions has been used to explore the influence of the realistic nuclear density geometry on transparency. An average nuclear transparency and an average reaction transparency are defined and their dependence on target and projectile dimensions and on the hadron-nucleon collision cross section are described. The results are expected to be valid for projectile energies above several hundred MeV/nucleon through the ultrarelativistic regime. For uniform (hard sphere) nuclear profiles, methods for obtaining effective total transparencies are suggested

  12. Hybrid superconducting-magnetic memory device using competing order parameters.

    Science.gov (United States)

    Baek, Burm; Rippard, William H; Benz, Samuel P; Russek, Stephen E; Dresselhaus, Paul D

    2014-05-28

    In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

  13. New memory devices based on the proton transfer process

    International Nuclear Information System (INIS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

  14. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  15. Memory architecture

    NARCIS (Netherlands)

    2012-01-01

    A memory architecture is presented. The memory architecture comprises a first memory and a second memory. The first memory has at least a bank with a first width addressable by a single address. The second memory has a plurality of banks of a second width, said banks being addressable by components

  16. Exploring Quantitative Framework to Evaluate Nuclear Transparency

    International Nuclear Information System (INIS)

    Ha, Jeemin; Yim, Mansung; Park, Hyeon Seok

    2014-01-01

    In this work, a definition of nuclear transparency is elaborated and ways to represent a country's nuclear transparency are examined. For evaluating nuclear transparency, it is necessary to define three elements first; an information seeker who wants to see, an information seek whom an information seeker wants to see, and information related to nuclear materials and activities. The States with high capacity of civilian nuclear power had a tendency to follow IAEA safeguards agreements well. And it means that their levels of the transparency are relatively high. Besides, the data of international assurances is one of the good indicators to confirm States' transparency. The current study explored the use of two measures, IAEA safeguards and voluntary reporting as a way to represent nuclear transparency. Using these measures seemed to agree with the notion that nuclear transparency is important in the success of civilian nuclear power development

  17. Practice Variation in Big-4 Transparency Reports

    DEFF Research Database (Denmark)

    Girdhar, Sakshi; Klarskov Jeppesen, Kim

    2018-01-01

    Purpose: The purpose of this paper is to examine the transparency reports published by the Big-4 public accounting firms in the UK, Germany and Denmark to understand the determinants of their content within the networks of big accounting firms. Design/methodology/approach: The study draws...... on a qualitative research approach, in which the content of transparency reports is analyzed and semi-structured interviews are conducted with key people from the Big-4 firms who are responsible for developing the transparency reports. Findings: The findings show that the content of transparency reports...... is inconsistent and the transparency reporting practice is not uniform within the Big-4 networks. Differences were found in the way in which the transparency reporting practices are coordinated globally by the respective central governing bodies of the Big-4. The content of the transparency reports...

  18. Transparency as an element of public confidence

    International Nuclear Information System (INIS)

    Kim, H.K.

    2007-01-01

    In the modern society, there is increasing demands for greater transparency. It has been discussed with respect to corruption or ethics issues in social science. The need for greater openness and transparency in nuclear regulation is widely recognised as public expectations on regulator grow. It is also related to the digital and information technology that enables disclosures of every activity and information of individual and organisation, characterised by numerous 'small brothers'. Transparency has become a key word in this ubiquitous era. Transparency in regulatory activities needs to be understood in following contexts. First, transparency is one of elements to build public confidence in regulator and eventually to achieve regulatory goal of providing the public with satisfaction at nuclear safety. Transparent bases of competence, independence, ethics and integrity of working process of regulatory body would enhance public confidence. Second, activities transmitting information on nuclear safety and preparedness to be accessed are different types of transparency. Communication is an active method of transparency. With increasing use of web-sites, 'digital transparency' is also discussed as passive one. Transparency in regulatory process may be more important than that of contents. Simply providing more information is of little value and specific information may need to be protected for security reason. Third, transparency should be discussed in international, national and organizational perspectives. It has been demanded through international instruments. for each country, transparency is demanded by residents, public, NGOs, media and other stakeholders. Employees also demand more transparency in operating and regulatory organisations. Whistle-blower may appear unless they are satisfied. Fourth, pursuing transparency may cause undue social cost or adverse effects. Over-transparency may decrease public confidence and the process for transparency may also hinder

  19. The analysis of semi-volatile and non-volatile petroleum hydrocarbons in a soil/sediment matrix by capillary column gas chromatography/flame ionization detection (GC/FID)

    International Nuclear Information System (INIS)

    George, J.E. III; Thoma, J.J.; Hastings, M.

    1990-01-01

    A comprehensive analysis for semi-volatile and non-volatile fractions of petroleum hydrocarbons can be achieved by a solvent extraction/concentration techniques that will effectively extract these high molecular weight fractions from a soil matrix. The prepared extract is then injected directly into a gas chromatograph equipped with a capillary column and flame ionization detector. This technique applies to the following types of commercially available petroleum hydrocarbons: Diesel Nos. 2,4,5, and 6, fuel oils and several grades of lubrication oil. The identification of a particular petroleum hydrocarbon is determined visually by comparison of the samples with known hydrocarbon standards. Accurate quantitation of the chromatograms is possible by using peak area summation and the presence of an internal standard. The practical quantitation limit for the method is 10 mg/Kg for most fuel types. This paper presents a method for determining the concentration of these fuel types in soil. Data will be presented only on 10W40 lubrication oil in terms of method validation, calibration, percent recovery, and method detection limits. A discussion of the quatitation techniques used will also be included

  20. EDITORIAL: On display with transparent conducting films On display with transparent conducting films

    Science.gov (United States)

    Demming, Anna

    2012-03-01

    the sheet resistance of HNO3 treated carbon-nanotube films than the removal of residual N-methylpyrrolidone. Unsurprisingly graphene, the latest carbon wonder material, has also shown remarkable potential as a transparent conducting film. Chemical vapour deposition (CVD) synthesis of graphene has the advantage that it allows fabrication of the sheets to be scaled up. A collaboration of researchers in the USA, Singapore and Korea demonstrated that the conductivity of CVD graphene sheets can be improved by p-doping with AuCl3 [9]. The potential of graphene in a range of applications is also being demonstrated, as researchers in Australia and China show in a report on graphene in transparent conducting electrodes for GaN LED devices [10]. The review in this issue [4] provides a comprehensive overview of graphene as an electrode, including the synthesis, chemical doping and work function engineering of the material, as well as applications in transistors, memories, molecular junctions, touch screens, LCDs, LEDs and solar cells. Back in the early 1950s Gillham and Preston saw the possibility of using their gold sputtered bismuth oxide films for windows that could be electrically heated and took out a patent on their discovery [11]. While they saw potential applications for conducting transparent films, it could be argued that even Gillham and Preston would have been surprised at the extent to which transparent conducting films have infiltrated everyday technology over the 60 years since. It is tempting to wonder what wide reaching ramifications the current fruitful activity in graphene device research may have in the decades to come. References [1] Ayrton W E and Mather T 1894 J. Int. Elec. Eng. 23 376-80 [2] Gillham E J and Preston J S 1952 Proc. Phys. Soc. B 65 649 [3] Ishiguro K, Sasaki T, Arai T and Imai I 1958 J. Phys. Soc. Jpn. 13 296-304 [4] Jo G, Choe M, Lee S, Park W, Kahng Y H and Lee T 2012 Nanotechnology 23 112001 [5] Guo P and Aegerter M A 1999 Thin Solid

  1. SCM-BP: An Intelligent Buffer Management Mechanism for Database in Storage Class Memory

    OpenAIRE

    Tavares, Júlio A.; Filho, José de Aguiar Moraes; Brayner, Angelo; Lustosa, Eduardo

    2013-01-01

    A set of new storage media, called Storage Class Memory (SCM), has emerged as a quite promising solution to decrease the difference between HDD data access time and the time that processors can consume data. Four main characteristics may be highlighted in SCM: (i) non-volatility; (ii) low access time; (iii) high rates of IOPS, and  (iv) read/write execution time asymmetry. The former three have a direct benefit for database systems. Notwithstanding, the latter one poses challenges for databas...

  2. Transparency as Ideal and Practice

    DEFF Research Database (Denmark)

    Garsten, Christina; Jacobsson, Kerstin

    2016-01-01

    New Public Management (NPM) ideas and practices have significantly reshaped labour market policy. This article takes a closer look at some of the implications of NPM practices and “audit culture” at local Public Employment Service (PES) authorities in Sweden. Based on interviews with staff...... of government” that make transparent and “legible” desirable traits in the individual. Such classificatory schemes, we argue, are integral parts of the operational procedures of NPM. Moreover, the analysis shows that the categories through which the individual moves are plastic and pliable in relation...... to political predicates and labour market fluctuations. In this process, employability and disability become floating categories...

  3. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  4. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation hardened CMOS devices and circuits - LDRD Project (FY99)

    International Nuclear Information System (INIS)

    Myers, David R.; Jessing, Jeffrey R.; Spahn, Olga B.; Shaneyfelt, Marty R.

    2000-01-01

    This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds

  5. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  6. Transparency in nanophotonic quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)

    2009-03-28

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  7. Transparency in nanophotonic quantum wires

    International Nuclear Information System (INIS)

    Singh, Mahi R

    2009-01-01

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  8. Nuclear transparency: the French example

    International Nuclear Information System (INIS)

    Phuc Tran Dai

    2016-01-01

    In France nuclear industry is from far the industrial sector that has set the most numerous commissions that allow a dialogue with the public in order to favor transparency. There are 4 local structures of information: -)there are 38 Local Committees of Information (CLI) associated with nuclear facilities, -) the Information Committees (CI) associated with secret nuclear facilities, -) the Follow-up Committees (CSS) for facilities dedicated to the processing of wastes, and the Committees for the prevention of industrial pollution (SPPPI). These committees involve numerous actors: public service, industrialists, supervisory authorities, elected representatives, employee representatives, members of associations and residents living nearby. Since 2000, 10 national public hearings around the 'atom' have been organized by the CNDP (National Commission for Public Consultation). Most actors of the nuclear industry allow residents living nearby to visit their installations, EDF ranks 3 as the company most visited with 400.000 people a year. Following the nuclear example the French chemical industry progressively moves toward more transparency. (A.C.)

  9. Narrative Transparency: Adopting a Rhetorical Stance

    DEFF Research Database (Denmark)

    Arnould, Eric; Press, Melea

    2014-01-01

    In this paper, we look at how alternative marketing organisations communicate transparency in a climate of generalised risk and scepticism. We contrast the traditional numeric approach to transparency, which involves auditing and third-party certifications; with an alternative approach that we call...... narrative transparency. Central to narrative transparency is an emphasis on stake-holder dialogue and an invitation to stake-holders to play the role of auditor. This article illustrates how alternative marketing organisations engage in rhetorical tactics central to a narrative approach, to communicate...... transparency to their stakeholders. These rhetorical tactics include persona, allegory, consumer sovereignty and enlightenment. Community supported agriculture programmes from across the United States are the context for this study. Findings enrich discussions about best practices for transparency...

  10. Privacy-Preserving Transparency-Enhancing Tools

    OpenAIRE

    Pulls, Tobias

    2012-01-01

    Transparency is a key principle in democratic societies. For example, the public sector is in part kept honest and fair with the help of transparency through different freedom of information (FOI) legislations. In the last decades, while FOI legislations have been adopted by more and more countries worldwide, we have entered the information age enabled by the rapid development of information technology. This has led to the need for technological solutions that enhance transparency, for exampl...

  11. Towards Transparency in Finance and Governance

    OpenAIRE

    Tara Vishwanath; Daniel Kaufmann

    2003-01-01

    The study of transparency is increasingly a more topical, broadly relevant, but also more under-researched enterprise. The Asian financial crisis has highlighted not only the welfare consequences of financial sector transparency, sparking a series of yet unresolved debates, but has also linked this relatively narrow problem to the broader context of transparency in governance. Its significance has broadened geographically as well as across different sectors. It has been observed that curtailm...

  12. The Multi-Faceted Concept of Transparency

    OpenAIRE

    Forssbæck, Jens; Oxelheim, Lars

    2014-01-01

    Transparency has become a catchword and in the economic-political debate is often seen as a universal remedy for all sorts of problems. In this paper, we analyze and discuss the meaning and use of the concept of transparency in economic research. We look for common denominators across different areas where the concept is used, and find that transparency in essence is about reductions in information asymmetries, and therefore entails the transfer of information from a sender to a receiver. Tra...

  13. Transparent metals for ultrabroadband electromagnetic waves.

    Science.gov (United States)

    Fan, Ren-Hao; Peng, Ru-Wen; Huang, Xian-Rong; Li, Jia; Liu, Yongmin; Hu, Qing; Wang, Mu; Zhang, Xiang

    2012-04-17

    Making metals transparent, which could lead to fascinating applications, has long been pursued. Here we demonstrate that with narrow slit arrays metallic plates become transparent for extremely broad bandwidths; the high transmission efficiency is insensitive to the metal thickness. This work provides a guideline to develop novel devices, including transparent conducting panels, broadband metamaterials, and antireflective solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Liquidity and Transparency in Bank Risk Management

    OpenAIRE

    Lev Ratnovski

    2013-01-01

    Banks may be unable to refinance short-term liabilities in case of solvency concerns. To manage this risk, banks can accumulate a buffer of liquid assets, or strengthen transparency to communicate solvency. While a liquidity buffer provides complete insurance against small shocks, transparency covers also large shocks but imperfectly. Due to leverage, an unregulated bank may choose insufficient liquidity buffers and transparency. The regulatory response is constained: while liquidity buffers ...

  15. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

    OpenAIRE

    Bocquet , Marc

    2009-01-01

    Flash memory is today a major element for the development of the portable electronics which require more and more memory capability at low cost (netbook, cell phones, PDA, USB sticks...). In order to maintain it for the years to come, it is necessary to continue improving this technology. Also, the integration of High-k materials and the use of trap charge memories are strongly envisaged. This PhD focuses on the integration and the electrical study (fixed charge, trapping, leakage currents......

  16. 3 CFR - Transparency and Open Government

    Science.gov (United States)

    2010-01-01

    ... system of transparency, public participation, and collaboration. Openness will strengthen our democracy... public. Government should be participatory. Public engagement enhances the Government's effectiveness and...

  17. MEMORY MODULATION

    Science.gov (United States)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

  18. Memory Matters

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Memory Matters KidsHealth / For Kids / Memory Matters What's in ... of your complex and multitalented brain. What Is Memory? When an event happens, when you learn something, ...

  19. Fault-tolerant NAND-flash memory module for next-generation scientific instruments

    Science.gov (United States)

    Lange, Tobias; Michel, Holger; Fiethe, Björn; Michalik, Harald; Walter, Dietmar

    2015-10-01

    Remote sensing instruments on today's space missions deliver a high amount of data which is typically evaluated on ground. Especially for deep space missions the telemetry downlink is very limited which creates the need for the scientific evaluation and thereby a reduction of data volume already on-board the spacecraft. A demanding example is the Polarimetric and Helioseismic Imager (PHI) instrument on Solar Orbiter. To enable on-board offline processing for data reduction, the instrument has to be equipped with a high capacity memory module. The module is based on non-volatile NAND-Flash technology, which requires more advanced operation than volatile DRAM. Unlike classical mass memories, the module is integrated into the instrument and allows readback of data for processing. The architecture and safe operation of such kind of memory module is described in the following paper.

  20. Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

    Science.gov (United States)

    Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

    2007-04-01

    Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

  1. Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

    Science.gov (United States)

    Wang, Weijie; Loke, Desmond; Shi, Luping; Zhao, Rong; Yang, Hongxin; Law, Leong-Tat; Ng, Lung-Tat; Lim, Kian-Guan; Yeo, Yee-Chia; Chong, Tow-Chong; Lacaita, Andrea L

    2012-01-01

    The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

  2. Memory and pressure studies in Na{sub x}CoO{sub 2} cobaltites

    Energy Technology Data Exchange (ETDEWEB)

    Garbarino, G; Bouvier, P; Crichton, W A; Mezouar, M [European Synchrotron Radiation Facility, Grenoble (France); Regueiro, M Nunez; Lejay, P [MCBT, Institut Neel, Grenoble (France); Armand, M [LRCS, Universite Picardie Jules-Verne Amiens, Amiens (France); Foo, M L; Cava, R J, E-mail: gaston.garbarino@esrf.f [Department of Chemistry and Materials Institute, Princeton University, New Jersey (United States)

    2009-03-01

    We present a detailed study on the memory effect results in Na{sub 0.5} paragraph 5CoO{sub 2} single crystals. We analyze the temperature dependence of the nonvolatile current-pulse-induced resistance memory state. These results allow us to have more insight in the mobility of Na{sup +} ions induced by current and their effect on the memory effect. We also developed X-ray diffraction studies under pressure at ambient temperature in the N{sub a0.5}CoO{sub 2} powder compound. An orthorhombic to hexagonal phase transition was observed at 9GPa. This transition can be explained taking into account the Na ions displacement between two allowed positions. These structural results allow us to confirm that the non-volatile resistive commutation can be interpreted by the displacement of the Na ions induced by the current pulses.

  3. Memory and pressure studies in NaxCoO2 cobaltites

    International Nuclear Information System (INIS)

    Garbarino, G; Bouvier, P; Crichton, W A; Mezouar, M; Regueiro, M Nunez; Lejay, P; Armand, M; Foo, M L; Cava, R J

    2009-01-01

    We present a detailed study on the memory effect results in Na 0.5 paragraph 5CoO 2 single crystals. We analyze the temperature dependence of the nonvolatile current-pulse-induced resistance memory state. These results allow us to have more insight in the mobility of Na + ions induced by current and their effect on the memory effect. We also developed X-ray diffraction studies under pressure at ambient temperature in the N a0.5 CoO 2 powder compound. An orthorhombic to hexagonal phase transition was observed at 9GPa. This transition can be explained taking into account the Na ions displacement between two allowed positions. These structural results allow us to confirm that the non-volatile resistive commutation can be interpreted by the displacement of the Na ions induced by the current pulses.

  4. Device and methods for writing and erasing analog information in small memory units via voltage pulses

    Science.gov (United States)

    El Gabaly Marquez, Farid; Talin, Albert Alec

    2018-04-17

    Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

  5. Pursuing transparency through science courts

    Energy Technology Data Exchange (ETDEWEB)

    Field, Thomas G. Jr. [Franklin Pierce Law Center, Concord, NH (United States)

    1999-12-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards.

  6. Pursuing transparency through science courts

    International Nuclear Information System (INIS)

    Field, Thomas G. Jr.

    1999-01-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards

  7. Pursuing transparency through science courts

    Energy Technology Data Exchange (ETDEWEB)

    Field, Jr, Thomas G [Franklin Pierce Law Center, Concord, NH (United States)

    1999-12-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards.

  8. Radiation-shielding transparent material

    International Nuclear Information System (INIS)

    Kusumeki, Asao.

    1983-01-01

    Purpose : To obtain radiation-shielding transparent material having a high resistivity to the radioactive rays or light irradiation which is greater at least by two digits as compared with lead glass. Constitution : The shielding material is composed of a saturated aqueous solution zinc iodide. Zinc iodide (specific gravity of 4.2) is dissolved by 430 g into 100 cc of water at a temperature of 20 0 C and forms a heavy liquid with a specific gravity of 2.80. The radiation length of the heavy liquid is 3.8 cm which is 1.5 times as large as lead glass. The light transmission is greater than 95% in average. Furthermore, by adding hypophosphorous acid as a reducing agent to the aqueous solution of the lead iodide, the material is stabilized against the irradiation of light or radioactive rays and causes no discoloration for a long time. (Moriyama, K.)

  9. Transparency and public value : Analyzing the transparency practices and value creation of public utilities

    NARCIS (Netherlands)

    Douglas, S.C.; Meijer, A.J.

    2016-01-01

    This article examines to what extent transparency is a condition for the creation of public value. Transparency is usually narrowly defined as a tool for external stakeholders to monitor the internal workings of an organization, but public value management positions transparency as a broader

  10. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

    International Nuclear Information System (INIS)

    Zhang Junyu; Wang Yong; Liu Jing; Zhang Manhong; Xu Zhongguang; Huo Zongliang; Liu Ming

    2012-01-01

    We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the 'erased states' can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications. (semiconductor devices)

  11. Atomically Bonded Transparent Superhydrophobic Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, Tolga [ORNL

    2015-08-01

    Maintaining clarity and avoiding the accumulation of water and dirt on optically transparent surfaces such as US military vehicle windshields, viewports, periscope optical head windows, and electronic equipment cover glasses are critical to providing a high level of visibility, improved survivability, and much-needed safety for warfighters in the field. Through a combination of physical vapor deposition techniques and the exploitation of metastable phase separation in low-alkali borosilicate, a novel technology was developed for the fabrication of optically transparent, porous nanostructured silica thin film coatings that are strongly bonded to glass platforms. The nanotextured films, initially structurally superhydrophilic, exhibit superior superhydrophobicity, hence antisoiling ability, following a simple but robust modification in surface chemistry. The surfaces yield water droplet contact angles as high as 172°. Moreover, the nanostructured nature of these coatings provides increased light scattering in the UV regime and reduced reflectivity (i.e., enhanced transmission) over a broad range of the visible spectrum. In addition to these functionalities, the coatings exhibit superior mechanical resistance to abrasion and are thermally stable to temperatures approaching 500°C. The overall process technology relies on industry standard equipment and inherently scalable manufacturing processes and demands only nontoxic, naturally abundant, and inexpensive base materials. Such coatings, applied to the optical components of current and future combat equipment and military vehicles will provide a significant strategic advantage for warfighters. The inherent self-cleaning properties of such superhydrophobic coatings will also mitigate biofouling of optical windows exposed to high-humidity conditions and can help decrease repair/replacement costs, reduce maintenance, and increase readiness by limiting equipment downtime.

  12. Transparent face recognition in the home environment

    NARCIS (Netherlands)

    Beumer, G.M.; Veldhuis, Raymond N.J.; Bazen, A.M.

    2004-01-01

    The BASIS project is about the secure application of transparent biometrics in the home environment. Due to transparency and home-setting requirements there is variance in appearance of the subject. An other problem which needs attention is the extraction of features. The quality of the extracted

  13. Transparency | IDRC - International Development Research Centre

    International Development Research Centre (IDRC) Digital Library (Canada)

    Transparency means openness. It allows Canadians to hold the government accountable through the proactive release of information on government activities, programs, policies, and services in formats that are easy to find, access, and use. Transparency is the key element in the Government of Canada's Commitment to ...

  14. 78 FR 14149 - 2012 Fiscal Transparency Report

    Science.gov (United States)

    2013-03-04

    .... Therefore, a published budget that does not include significant cash or non-cash resources, including... transparency is a critical element of effective public financial management, helps build market confidence, and sets the stage for economic sustainability. Transparency also provides a window into government budgets...

  15. Substantive Transparency Requirements in International Investment Law

    NARCIS (Netherlands)

    Pohl, Jens Hillebrand

    2017-01-01

    Few concepts in public governance evoke a more positive sentiment than transparency. Whether ultimately grounded in expediency or morality, transparency has emerged out of its municipal origins and been received at the international plane. This article examines the current state of evolution of the

  16. Transparency and Its Determinants at Colombian Universities

    Science.gov (United States)

    Flórez-Parra, Jesús Mauricio; López-Pérez, María Victoria; López-Hernández, Antonio Manuel

    2017-01-01

    Over the past decade, one of the demands upon public institutions, among which we find universities, has been for transparency and improvement of accountability. In this context, Colombian universities are introducing different methods of management and governance aimed at addressing the demands of society generally in relation to transparency and…

  17. 18 CFR 358.7 - Transparency rule.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Transparency rule. 358.7 Section 358.7 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION... Transparency rule. (a) Contemporaneous disclosure. (1) If a transmission provider discloses non-public...

  18. Single side Emitting Transparent OLED lamp

    NARCIS (Netherlands)

    Lifka, H.; Verschuren, C.A.; Bruls, D.M.; Tanase, C.

    2011-01-01

    Transparent OLEDs offer great potential for novel applications. Preferably, the light should be emitted from one side only. This can bedone to some extent by modifying electrode thicknesses, but at the cost of reduced transparency. Here, we demonstrate a new approach tomake single side emissive

  19. Transparency in netchains : evaluation and perspective

    NARCIS (Netherlands)

    Hofstede, G.J.; Schepers, H.E.; Trienekens, J.H.

    2003-01-01

    This paper was written for KLICT to evaluate the focus area Transparency in Netchains. It revisits the definitions and research agenda in the review paper with which the focal area started (Hofstede 2002). The definition of transparency has turned out to serve its purpose. The research has

  20. Can transparency be measured - a look ahead

    International Nuclear Information System (INIS)

    Jorle, A.

    2007-01-01

    The simple answer to this question is no. But if you define the expression and decide transparency actually is, the answer might be different. Transparency means different things in different places. In one country transparency meant almost total access to anything that a government authority has in its possession. In another country transparency is more strict access to certain decisions, decisions makers or documents written with the sole purpose of informing the public. What variables could be found in the word transparent, what is a transparent regulator? In this short presentation we will deal with some important settings or fundamental prerequisites for a regulator calling itself transparent. Perhaps we should look at them in order of importance. Some days it is difficult to do all at once. As a final point, if we as regulators wish to call ourselves transparent in a future with diminishing national borders, fast electronic communication and increasing world wide media impact, what does the world require from us as regulators? (author)

  1. Organizational Transparency in the Internet Industry

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    as a panacea to concerns about privacy, organizational conduct and accountability, this paper explores the boundary work that goes into doing and promising transparency Using insights from the literature on transparency, ´sociologies of translations' and process approaches to organization, this paper captures...

  2. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  3. Transparency, price-dependent demand and product variety

    OpenAIRE

    Gu, Yiquan; Wenzel, Tobias

    2010-01-01

    This paper revisits the relationship between transparency on the consumer side and product variety as analyzed in Schultz (2009). We identify two welfare effects of transparency. More transparency decreases price-cost margins which is beneficial forwelfare. On the other hand, more transparency reduces variety which can be positive or negative for welfare. Overall, more transparency is always welfareimproving.

  4. The impact of records management system in transparency of public administrations: Transparency by design

    Directory of Open Access Journals (Sweden)

    Agustí Cerrillo Martínez

    2018-05-01

    Full Text Available Records management system has a great impact in the improvement of transparency in public administration. Transparency by design refers to the inclusion of transparency duties stated by legislation in force in the records’ life cycle in a way that it guarantees citizens effective access to public information. In this paper, the changes that public administrations have to propel in their records management systems to improve public transparency and to make easy access to information are analysed. In particular, as a case study, provisions made by Law 19/2014, of December 29, on Transparency, Access to Public Information and Good Governance of Catalonia are explored.

  5. Competition for transparency as a carrier of competition. Transparency needs in the European wholesale electricity markets

    International Nuclear Information System (INIS)

    Jong, Hanneke de; Hakvoort, Rudi

    2005-01-01

    This paper analyses different transparency aspects regarding European wholesale electricity markets and discusses transparency issues to be solved. In Europe, currently some progress has been made with respect to market transparency but transparency issues related to transmission, system operation and regulation have received little attention so far. Transmission system operators (TSOs) and regulatory authorities need certain market information in order to secure efficient competition. However, TSOs and regulatory authorities need to communicate themselves in order to facilitate competition and decrease uncertainty among market participants. Furthermore, considering ongoing market integration both TSOs and regulatory authorities must exchange information amongst themselves in order to facilitate coordination and monitoring activities. The effect of a higher level of transparency on effective competition is depended on two categories of transparency aspects: aspects that are related to transparency in the sense of open and adequate communication (perspicuity) and aspects that are related to the easiness to understand (clarity). Transparency includes both aspects. Pursuing overall harmonization of the European transparency level is important to fully profit from a higher level of (international) harmonization. Effective harmonization requires harmonization on all communication aspects. For Europe, with its many immature markets, the dilemma remains whether it is preferable to have less transparency with a high level of harmonization or to have a higher level of transparency but a lower level of harmonization. (Author)

  6. Transmission in Optically Transparent Core Networks

    Science.gov (United States)

    Kilper, Dan; Jensen, Rich; Petermann, Klaus; Karasek, Miroslav

    2007-03-01

    Call for Papers: Transmission in Optically Transparent Core Networks Guest Feature Editors Dan Kilper and Rich Jensen, Coordinating Associate Editors Klaus Petermann and Miroslav Karasek, Guest Feature Editors Submission deadline: 15 June 2007 Optically transparent networks in which optical transport signals are routed uninterrupted through multiple nodes have long been viewed as an important evolutionary step in fiber optic communications. More than a decade of research and development on transparent network technologies together with the requisite traffic growth has culminated in the recent deployment of commercial optically transparent systems. Although many of the traditional research goals of optical transmission remain important, optical transparency introduces new challenges. Greater emphasis is placed on system efficiency and control. The goal of minimizing signal terminations, which has been pursued through increasing reach and channel capacity, also can be realized through wavelength routing techniques. Rather than bounding system operation by rigid engineering rules, the physical layer is controlled and managed by automation tools. Many static signal impairments become dynamic due to network reconfiguration and transient fault events. Recently new directions in transmission research have emerged to address transparent networking problems. This special issue of the Journal of Optical Networking will examine the technologies and theory underpinning transmission in optically transparent core networks, including both metropolitan and long haul systems. Scope of Submission The special issue editors are soliciting high-quality original research papers related to transmission in optically transparent core networks. Although this does not include edge networks such as access or enterprise networks, core networks that have access capabilities will be considered in scope as will topics related to the interworking between core and edge networks. The core network

  7. Overview of emerging nonvolatile memory technologies.

    Science.gov (United States)

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  8. Overview of emerging nonvolatile memory technologies

    Science.gov (United States)

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  9. Transparency in Global Environmental Governance: A Coming of Age?

    NARCIS (Netherlands)

    Gupta, A.

    2010-01-01

    This introductory article draws on the contributions to this special issue to consider the implications of a transparency turn in global environmental and sustainability governance. Three interrelated aspects are addressed: why transparency now? How is transparency being institutionalized? And what

  10. 76 FR 7522 - Federal Acquisition Regulation; Enhancing Contract Transparency

    Science.gov (United States)

    2011-02-10

    ... transparency while retaining the protection of information that should be considered in the contracting process... the need for transparency in Government contracting information and believe these recommendations... Regulation; Enhancing Contract Transparency AGENCY: Department of Defense (DoD), General Services...

  11. Effects of annealing temperature in a metal alloy nano-dot memory

    International Nuclear Information System (INIS)

    Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

    2011-01-01

    The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

  12. Mapping of Fault-Tolerant Applications with Transparency on Distributed Embedded Systems

    DEFF Research Database (Denmark)

    Izosimov, Viacheslav; Pop, Paul; Eles, Petru

    2006-01-01

    if it does not affect operation of other processes. Transparent recovery has the advantage of fault containment, improved debugability and less memory needed to store the fault-tolerant schedules. However, it will introduce additional delays that can lead to violations of the timing constraints...... is driven by a heuristic that is able to estimate the worst-case schedule length and indicate whether a certain mapping alternative is schedulable...

  13. Synthesis of Fault-Tolerant Schedules with Transparency/Performance Trade-offs for Distributed Embedded Systems

    DEFF Research Database (Denmark)

    Izosimov, Viacheslav; Pop, Paul; Eles, Petru

    2006-01-01

    of the application. We propose a novel algorithm for the synthesis of fault-tolerant schedules that can handle the transparency/performance trade-offs imposed by the designer, and makes use of the fault-occurrence information to reduce the overhead due to fault tolerance. We model the application as a conditional...... process graph, where the fault occurrence information is represented as conditional edges and the transparent recovery is captured using synchronization nodes....... such that the operation of other processes is not affected, we call it transparent recovery. Although transparent recovery has the advantages of fault containment, improved debugability and less memory needed to store the fault-tolerant schedules, it will introduce delays that can violate the timing constraints...

  14. Optimal Degrees of Transparency in Monetary Policymaking

    DEFF Research Database (Denmark)

    Jensen, Henrik

    2002-01-01

    According to most academics and policymakers, transparency in monetary policymaking is desirable. I examine this proposition in a small theoretical model emphasizing forward-looking private sector behavior. Transparency makes it easier for price setters to infer the central bank's future policy...... intentions, thereby making current inflation more responsive to policy actions. This induces the central bank to pay more attention to inflation rather than output gap stabilization. Then, transparency may be disadvantageous. It may actually be a policy-distorting straitjacket if the central bank enjoys low...

  15. Fiscal Transparency and Procyclical Fiscal Policy

    DEFF Research Database (Denmark)

    Andersen, Asger Lau; Nielsen, Lasse Holbøll Westh

    This paper examines why fiscal policy is procyclical in developing as well as developed countries. We introduce the concept of fiscal transparency into a model of retrospective voting, in which a political agency problem between voters and politicians generates a procyclical bias in government...... spending. The introduction of fiscal transparency generates two new predictions: 1) the procyclical bias in fiscal policy arises only in good times; and 2) a higher degree of fiscal transparency reduces the bias in good times. We find solid empirical support for both predictions using data on both OECD...

  16. Double optomechanical transparency with direct mechanical interaction

    International Nuclear Information System (INIS)

    Li Ling-Chao; Shi Rao; Xu Jun; Hu Xiang-Ming

    2015-01-01

    We present a mechanism for double transparency in an optomechanical system. This mechanism is based on the coupling of a moving cavity mirror to a second mechanical oscillator. Due to the purely mechanical coupling and the radiation pressure, three pathways are established for excitations of the probe photons into the cavity photons. Destructive interference occurs at two different frequencies, leading to double transparency to the probe field. It is the coupling strength between the mechanical oscillators that determines the locations of the transparency windows. Moreover, the normal splitting appears for the generated Stokes field and the four-wave mixing process is inhibited on resonance. (paper)

  17. Consumer poaching, brand switching, and price transparency

    DEFF Research Database (Denmark)

    Schultz, Christian

    2014-01-01

    This paper addresses price transparency on the consumer side in markets with behavioral price discrimination which feature welfare reducing brand switching. When long-term contracts are not available, an increase in transparency intensifies competition, lowers prices and profits, reduces brand...... switching and benefits consumers and welfare. With long-term contracts, an increase in transparency reduces the use of long-term contracts, leading to more brand switching and a welfare loss. Otherwise, the results are the same as without long-term contracts....

  18. Memory for Light as a Quantum Process

    International Nuclear Information System (INIS)

    Lobino, M.; Kupchak, C.; Lvovsky, A. I.; Figueroa, E.

    2009-01-01

    We report complete characterization of an optical memory based on electromagnetically induced transparency. We recover the superoperator associated with the memory, under two different working conditions, by means of a quantum process tomography technique that involves storage of coherent states and their characterization upon retrieval. In this way, we can predict the quantum state retrieved from the memory for any input, for example, the squeezed vacuum or the Fock state. We employ the acquired superoperator to verify the nonclassicality benchmark for the storage of a Gaussian distributed set of coherent states.

  19. Federal Funding Accountability and Transparency Act frequently asked questions

    Science.gov (United States)

    One stop shop for Federal Funding Accountability and Transparency Act (FFATA) questions. This frequently asked document will assist with Federal Funding Accountability and Transparency Act (FFATA) related questions.

  20. Multiplexed image storage by electromagnetically induced transparency in a solid

    Science.gov (United States)

    Heinze, G.; Rentzsch, N.; Halfmann, T.

    2012-11-01

    We report on frequency- and angle-multiplexed image storage by electromagnetically induced transparency (EIT) in a Pr3+:Y2SiO5 crystal. Frequency multiplexing by EIT relies on simultaneous storage of light pulses in atomic coherences, driven in different frequency ensembles of the inhomogeneously broadened solid medium. Angular multiplexing by EIT relies on phase matching of the driving laser beams, which permits simultaneous storage of light pulses propagating under different angles into the crystal. We apply the multiplexing techniques to increase the storage capacity of the EIT-driven optical memory, in particular to implement multiplexed storage of larger two-dimensional amounts of data (images). We demonstrate selective storage and readout of images by frequency-multiplexed EIT and angular-multiplexed EIT, as well as the potential to combine both multiplexing approaches towards further enhanced storage capacities.

  1. Light scattering under conditions of nonstationary electromagnetically induced transparency

    International Nuclear Information System (INIS)

    Larionov, N V; Sokolov, I M

    2007-01-01

    The propagation of probe radiation pulses in ultracold atomic ensembles is studied theoretically under conditions of electromagnetically induced transparency. The pulse 'stopping' process is considered which takes place upon nonadiabatic switching off and subsequent switching on the control field. We analysed the formation of an inverted recovered probe radiation pulse, i.e. the pulse propagating in the direction opposite to the propagation direction before the pulse stopping. Based on this analysis, a scheme is proposed for lidar probing atomic or molecular clouds in which the probe pulse penetrates into a cloud over the specified depth, while information on the cloud state is obtained from the parameters of the inverted pulse. Calculations are performed for an ensemble of 87 Rb atoms. (fifth seminar in memory of d.n. klyshko)

  2. Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

    Science.gov (United States)

    MacLeod, Todd; Ho, Fat D.

    2012-01-01

    The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere

  3. Enterprise wide transparent information access

    International Nuclear Information System (INIS)

    Brown, J.

    1995-05-01

    The information management needs of the Department of Energy (DOE) represents a fertile domain for the development of highly sophisticated yet intuitive enterprise-wide computing solutions. These solutions must support business operations, research agendas, technology development efforts, decision support, and other application areas with a user base ranging from technical staff to the highest levels of management. One area of primary interest is in the Environmental Restoration and Waste Management Branch of DOE. In this arena, the issue of tracking and managing nuclear waste related to the long legacy of prior defense production and research programs is one of high visibility and great concern. The Tank Waste Information Network System (TWINS) application has been created by the Pacific Northwest Laboratory (PNL) for the DOE to assist in managing and accessing the information related to this mission. The TWINS solution addresses many of the technical issues faced by other efforts to provide integrated information access to a wide variety of stakeholders. TWINS provides secure transparent access to distributed heterogeneous multimedia information sources from around the DOE complex. The users interact with the information through a consistent user interface that presents the desired data in a common format regardless of the structure of the source information. The solutions developed by the TWINS project represent an integration of several technologies and products that can be applied to other mission areas within DOE and other government agencies. These solutions are now being applied to public and private sector problem domains as well. The successful integration and inter-operation of both commercial and custom modules into a flexible and extensible information architecture will help ensure that new problems facing DOE and other clients can be addressed more rapidly in the future by re-use of existing tools and techniques proven viable through the TWINS efforts

  4. Transparent soil for imaging the rhizosphere.

    Directory of Open Access Journals (Sweden)

    Helen Downie

    Full Text Available Understanding of soil processes is essential for addressing the global issues of food security, disease transmission and climate change. However, techniques for observing soil biology are lacking. We present a heterogeneous, porous, transparent substrate for in situ 3D imaging of living plants and root-associated microorganisms using particles of the transparent polymer, Nafion, and a solution with matching optical properties. Minerals and fluorescent dyes were adsorbed onto the Nafion particles for nutrient supply and imaging of pore size and geometry. Plant growth in transparent soil was similar to that in soil. We imaged colonization of lettuce roots by the human bacterial pathogen Escherichia coli O157:H7 showing micro-colony development. Micro-colonies may contribute to bacterial survival in soil. Transparent soil has applications in root biology, crop genetics and soil microbiology.

  5. Broadband plasmon induced transparency in terahertz metamaterials

    KAUST Repository

    Zhu, Zhihua

    2013-04-25

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena and an enhanced nonlinear effect. However, the transparency mode is normally localized in a narrow frequency band, which thus restricts many of its applications. Here we present the simulation, implementation, and measurement of a broadband PIT metamaterial functioning in the terahertz regime. By integrating four U-shape resonators around a central bar resonator, a broad transparency window across a frequency range greater than 0.40 THz is obtained, with a central resonance frequency located at 1.01 THz. Such PIT metamaterials are promising candidates for designing slow light devices, highly sensitive sensors, and nonlinear elements operating over a broad frequency range. © 2013 IOP Publishing Ltd.

  6. Federal Funding Accountability and Transparency Act

    Science.gov (United States)

    Public Law 109-282, the Federal Funding Accountability and Transparency Act of 2006 as amended (FFATA), requires disclosure of all entities and organizations receiving Federal funds through a single publicly accessible website.

  7. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-01-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high

  8. Learning, Transparency and Relationship Building: Ethiopian ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Learning, Transparency and Relationship Building: Ethiopian Women Parliamentarians and Young Female University Students. IDRC's Democratic Governance, Women's Rights and Gender Equality initiative is supporting a body of comparative research on whether and how democratic processes and institutions are ...

  9. Broadband plasmon induced transparency in terahertz metamaterials

    International Nuclear Information System (INIS)

    Zhu Zhihua; Yang Xu; Gu Jianqiang; Jiang Jun; Tian Zhen; Han Jiaguang; Zhang Weili; Yue Weisheng; Tonouchi, Masayoshi

    2013-01-01

    Plasmon induced transparency (PIT) could be realized in metamaterials via interference between different resonance modes. Within the sharp transparency window, the high dispersion of the medium may lead to remarkable slow light phenomena and an enhanced nonlinear effect. However, the transparency mode is normally localized in a narrow frequency band, which thus restricts many of its applications. Here we present the simulation, implementation, and measurement of a broadband PIT metamaterial functioning in the terahertz regime. By integrating four U-shape resonators around a central bar resonator, a broad transparency window across a frequency range greater than 0.40 THz is obtained, with a central resonance frequency located at 1.01 THz. Such PIT metamaterials are promising candidates for designing slow light devices, highly sensitive sensors, and nonlinear elements operating over a broad frequency range. (paper)

  10. On transparent potentials: a Born approximation study

    International Nuclear Information System (INIS)

    Coudray, C.

    1980-01-01

    In the frame of the scattering inverse problem at fixed energy, a class of potentials transparent in Born approximation is obtained. All these potentials are spherically symmetric and are oscillating functions of the reduced radial variable. Amongst them, the Born approximation of the transparent potential of the Newton-Sabatier method is found. In the same class, quasi-transparent potentials are exhibited. Very general features of potentials transparent in Born approximation are then stated. And bounds are given for the exact scattering amplitudes corresponding to most of the potentials previously exhibited. These bounds, obtained at fixed energy, and for large values of the angular momentum, are found to be independent on the energy

  11. Transparency of atom-sized superconducting junctions

    International Nuclear Information System (INIS)

    Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

    1995-01-01

    We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

  12. Transparent conducting film: Effect of mechanical stretching

    Indian Academy of Sciences (India)

    We describe in this paper a transparent conducting film (TCF). ... conducting carbon nanotube film which is crack-resistant for solar cell applications. ... CA 90095, USA; Nanocomp Technologies, Inc, 162 Pembroke Road, Concord, NH 03301 ...

  13. Transparent conducting oxides and production thereof

    Science.gov (United States)

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  14. Transparency in nursing leadership: a chosen ethic.

    Science.gov (United States)

    Milton, Constance L

    2009-01-01

    The concept of transparency has been viewed as an essential leadership attribute or element in healthcare organizational structures and processes. While viewed as something that is desired and valued, there is a lack of nursing disciplinary literature that defines the concept and its possible meanings. This column provides a beginning definition of transparency from the humanbecoming nursing theoretical perspective and launches a discussion with potential ethical implications for leadership in nursing practice and education.

  15. Transparent wood for functional and structural applications

    Science.gov (United States)

    Li, Yuanyuan; Fu, Qiliang; Yang, Xuan; Berglund, Lars

    2017-12-01

    Optically transparent wood combines mechanical performance with optical functionalities is an emerging candidate for applications in smart buildings and structural optics and photonics. The present review summarizes transparent wood preparation methods, optical and mechanical performance, and functionalization routes, and discusses potential applications. The various challenges are discussed for the purpose of improved performance, scaled-up production and realization of advanced applications. This article is part of a discussion meeting issue `New horizons for cellulose nanotechnology'.

  16. Transparent Hydrophobic Coating by Sol Gel Method

    International Nuclear Information System (INIS)

    Mohd Hamzah Harun; Nik Ghazali Nik Salleh; Mahathir Mohamed; Mohd Sofian Alias

    2016-01-01

    Transparent hydrophobic coating of inorganic based tetra orthosilicate (TEOS) was prepared by sol gel method by varying fluoroalkylsilane (FAS) content which works as hydrophobic agent. Surface contact angle, transmittance degree and surface morphology were characterized for each sample. All samples show good transparency which was confirmed by UV visible spectroscopy. The hydrophobicity obtained increases with FAS content indicates that FAS is best candidate to induce hydrophobicity for inorganic coating. (author)

  17. Transparency in Canadian public drug advisory committees.

    Science.gov (United States)

    Rosenberg-Yunger, Zahava R S; Bayoumi, Ahmed M

    2014-11-01

    Transparency in health care resource allocation decisions is a criterion of a fair process. We used qualitative methods to explore transparency across 11 Canadian drug advisory committees. We developed seven criteria to assess transparency (disclosure of members' names, disclosure of membership selection criteria, disclosure of conflict of interest guidelines and members' conflicts, public posting of decisions not to fund drugs, public posting of rationales for decisions, stakeholder input, and presence of an appeals mechanism) and two sub-criteria for when rationales were posted (direct website link and readability). We interviewed a purposeful sample of key informants who were conversant in English and a current or past member of either a committee or a stakeholder group. We analyzed data using a thematic approach. Interviewing continued until saturation was reached. We examined documents from 10 committees and conducted 27 interviews. The median number of criteria addressed by committees was 2 (range 0-6). Major interview themes included addressing: (1) accessibility issues, including stakeholders' degree of access to the decision making process and appeal mechanisms; (2) communication issues, including improving internal and external communication and public access to information; and (3) confidentiality issues, including the use of proprietary evidence. Most committees have some mechanisms to address transparency but none had a fully transparent process. The most important ways to improve transparency include creating formal appeal mechanisms, improving communication, and establishing consistent rules about the use of, and public access to, proprietary evidence. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  18. Electromagnetically induced transparency with matched pulses

    International Nuclear Information System (INIS)

    Harris, S.E.

    1993-01-01

    In the last several years there have been studies and experiments showing how, by applying an additional laser beam, optically-thick transitions may be rendered nearly transparent to probing radiation. This transparency results from a quantum interference, very much like a Fano interference, which is established by the additional laser. This talk describes the difference between the quantum interference as exhibited by an independent atom and by an optically-thick ensemble of atoms. We find that an ensemble of atoms establishes transparency through a strong nonlinear interaction which, for a lambda system, tends to generate a matching temporal envelope on the complementary transition. For a ladder system, phase conjugate pulses are generated and, after a characteristic distance, establish transparency. The transparency of an optically-thick medium is therefore not a Beer's law superposition of the independent atom response. To transmit a pulse through an otherwise opaque media, the front edge of the complementary pulse should lead, in the manner of open-quotes counter-intuitiveclose quotes adiabatic transfer, the front edge of the pulse which is to be rendered transparent. Thereafter the pulses should be matched or, for a ladder system, phase-conjugately matched

  19. Lutetium oxide-based transparent ceramic scintillators

    Science.gov (United States)

    Seeley, Zachary; Cherepy, Nerine; Kuntz, Joshua; Payne, Stephen A.

    2016-01-19

    In one embodiment, a transparent ceramic of sintered nanoparticles includes gadolinium lutetium oxide doped with europium having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YEu.sub.YO.sub.3, where X is any value within a range from about 0.05 to about 0.45 and Y is any value within a range from about 0.01 to about 0.2, and where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm. In another embodiment, a transparent ceramic scintillator of sintered nanoparticles, includes a body of sintered nanoparticles including gadolinium lutetium oxide doped with a rare earth activator (RE) having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YRE.sub.YO.sub.3, where RE is selected from the group consisting of: Sm, Eu, Tb, and Dy, where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm.

  20. Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology

    International Nuclear Information System (INIS)

    Xu Yue; Yan Feng; Li Zhiguo; Yang Fan; Wang Yonggang; Chang Jianguang

    2010-01-01

    The influence of shallow trench isolation (STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology. (semiconductor devices)

  1. Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

    Science.gov (United States)

    Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

    2017-03-01

    Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

  2. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Murat, M.; Barak, J.; Akkerman, A.; Harboe-Sorensen, R.; Virtanen, A.; Visconti, A.; Bonanomi, M.

    2010-01-01

    Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices. In particular, the shrinking of minimum feature size of most advanced memory devices makes them very interesting test vehicles to study these effects since the device and the track dimensions are comparable; hence, measured effects are directly correlated with the time and space evolution of the energy release. In this work we are studying the time and space evolution of ion tracks by using advanced non volatile memories and Monte Carlo simulations. Experimental results are very well explained by the theoretical calculations.

  3. Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

    Science.gov (United States)

    Sahay, Shubham; Suri, Manan

    2017-12-01

    This paper provides a comprehensive review and insight of recent trends in the field of random number generator (RNG) and physically unclonable function (PUF) circuits implemented using different types of emerging resistive non-volatile (NVM) memory devices. We present a detailed review of hybrid RNG/PUF implementations based on the use of (i) Spin-Transfer Torque (STT-MRAM), and (ii) metal-oxide based (OxRAM), NVM devices. Various approaches on Hybrid CMOS-NVM RNG/PUF circuits are considered, followed by a discussion on different nanoscale device phenomena. Certain nanoscale device phenomena (variability/stochasticity etc), which are otherwise undesirable for reliable memory and storage applications, form the basis for low power and highly scalable RNG/PUF circuits. Detailed qualitative comparison and benchmarking of all implementations is performed.

  4. Cognitive memory.

    Science.gov (United States)

    Widrow, Bernard; Aragon, Juan Carlos

    2013-05-01

    Regarding the workings of the human mind, memory and pattern recognition seem to be intertwined. You generally do not have one without the other. Taking inspiration from life experience, a new form of computer memory has been devised. Certain conjectures about human memory are keys to the central idea. The design of a practical and useful "cognitive" memory system is contemplated, a memory system that may also serve as a model for many aspects of human memory. The new memory does not function like a computer memory where specific data is stored in specific numbered registers and retrieval is done by reading the contents of the specified memory register, or done by matching key words as with a document search. Incoming sensory data would be stored at the next available empty memory location, and indeed could be stored redundantly at several empty locations. The stored sensory data would neither have key words nor would it be located in known or specified memory locations. Sensory inputs concerning a single object or subject are stored together as patterns in a single "file folder" or "memory folder". When the contents of the folder are retrieved, sights, sounds, tactile feel, smell, etc., are obtained all at the same time. Retrieval would be initiated by a query or a prompt signal from a current set of sensory inputs or patterns. A search through the memory would be made to locate stored data that correlates with or relates to the prompt input. The search would be done by a retrieval system whose first stage makes use of autoassociative artificial neural networks and whose second stage relies on exhaustive search. Applications of cognitive memory systems have been made to visual aircraft identification, aircraft navigation, and human facial recognition. Concerning human memory, reasons are given why it is unlikely that long-term memory is stored in the synapses of the brain's neural networks. Reasons are given suggesting that long-term memory is stored in DNA or RNA

  5. Memory Modulation

    NARCIS (Netherlands)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive

  6. A Transparent Runtime Data Distribution Engine for OpenMP

    Directory of Open Access Journals (Sweden)

    Dimitrios S. Nikolopoulos

    2000-01-01

    Full Text Available This paper makes two important contributions. First, the paper investigates the performance implications of data placement in OpenMP programs running on modern NUMA multiprocessors. Data locality and minimization of the rate of remote memory accesses are critical for sustaining high performance on these systems. We show that due to the low remote-to-local memory access latency ratio of contemporary NUMA architectures, reasonably balanced page placement schemes, such as round-robin or random distribution, incur modest performance losses. Second, the paper presents a transparent, user-level page migration engine with an ability to gain back any performance loss that stems from suboptimal placement of pages in iterative OpenMP programs. The main body of the paper describes how our OpenMP runtime environment uses page migration for implementing implicit data distribution and redistribution schemes without programmer intervention. Our experimental results verify the effectiveness of the proposed framework and provide a proof of concept that it is not necessary to introduce data distribution directives in OpenMP and warrant the simplicity or the portability of the programming model.

  7. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-07-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.

  8. Memory Dysfunction

    Science.gov (United States)

    Matthews, Brandy R.

    2015-01-01

    Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

  9. Organizational Transparency & Sense Making: The case of Northern Rock

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Wehmeier, Stefan

    2014-01-01

    Organizational transparency is associated with mutual understanding and consensus between the organization and its constituents, but is typically defined as information disclosure. Such definitions pose the risk of simplification and provide incomplete understandings of the transparency phenomenon....... Additionally, research rarely focuses on how transparency is translated within crisis situations. This article presents a sense-making and discourse analysis perspective of transparency. We use the case of the British bank Northern Rock to show how this bank and its stakeholders enacted transparency...

  10. Transparent Data Encryption -- Solution for Security of Database Contents

    OpenAIRE

    Deshmukh, Dr. Anwar Pasha; Qureshi, Dr. Riyazuddin

    2013-01-01

    The present study deals with Transparent Data Encryption which is a technology used to solve the problems of security of data. Transparent Data Encryption means encrypting databases on hard disk and on any backup media. Present day global business environment presents numerous security threats and compliance challenges. To protect against data thefts and frauds we require security solutions that are transparent by design. Transparent Data Encryption provides transparent, standards-based secur...

  11. Economy and Transparency: The Model Invention

    Directory of Open Access Journals (Sweden)

    Mahmud Hassan TALUKDAR

    2013-12-01

    Full Text Available Relation of Transparency and Economic growth is a long global debate in the society. Theoretically, policy makers, scholars and researchers argue that there is a close relation among these two variables. However, the quantitative relation and any global model is yet unrevealed. So, the main aim of this paper is to ascertain the nature, dimension and extent of the relationship between economy and Transparency as well as to invent a global model. This paper is useful for researchers, planners, policy makers and scholars who are directly or indirectly involved or willing to involve in the thrust for quantitative relation of these two variables. Literature review is the main source of information of this study. In introductory section, this paper briefly describes theoretical relationship of economy and Transparency as well as it also describes the proxy variables.GDP (2012 of different countries are used as proxy of Economy and Corruption Perception Index (CPI scores (2012 of different countries are used as proxy of level of Transparency. In methodology section this paper describes the detail methodology, sampling procedure and level of analysis. This study randomly selects 30 countries (10 from higher CPI scores+10 from moderate CPI scores+ 10 from lower CPI scores around the globe as sample. In the third section, this research presents the correlation value which divulge that there is a positive correlation (p=.047 with 95% confidence level. That reveals, if the level of transparency of any country increase, the GDP also increase accordingly. Then in this section two quantitative models are developed using linear regression analysis. First invented model is: Economy (GDP in billion US$ = [(8.983*Level of transparency -108.11]. This paper termed the first invented model as “Mahmud EcoT Model-1”. This model calibrates that one unit improvement of transparency leads 8.98 billion US$ improvement in the GDP of a country. Then taking this unit

  12. Transparency in Europe: A Quantitative Study.

    Science.gov (United States)

    Bouder, Frederic; Way, Dominic; Löfstedt, Ragnar; Evensen, Darrick

    2015-07-01

    In recent years, European pharmaceutical regulators have increasingly committed to heightening access to raw safety-related data as part of a wave of transparency initiatives (e.g., providing public Internet-mediated access to clinical trials data). Yet, the regulators--who are under significant pressure--have not yet benefited from a systematic review of this new policy. In seeking to inject much needed evidence, this article explores the effects of new transparency policies designed to promote meaningful communication of risks and benefits to patients. Results of a cross-national European survey with respondents from Great Britain, the Netherlands, Spain, France, Germany, and Sweden (N = 5,648) shed light on how patients and the public are likely to react to the regulators' new transparency policies. The findings demonstrate clear national variations in how European citizens are likely to react and emphasize the need to develop evidence-based, reasoned transparency policies that integrate benefit-risk communication. The authors conclude by providing six specific recommendations, informed by the study, that seek to improve the European transparency model both within the medical field and across health, safety, and environmental policy domains. © 2015 Society for Risk Analysis.

  13. PUBLIC SECTOR TRANSPARENCY:A CONCEPTUAL DISSECTION

    Directory of Open Access Journals (Sweden)

    Mara Andreea SÎNTEJUDEANU

    2014-06-01

    Full Text Available The concept of transparency has increasingly attracted the attention of academic, political and business areas. Many studies have demonstrated the need for adopting this corporate governance principle also in the public sector, a phenomenon that has become widespread at international level. The academic study field defines transparency as the ability to look clearly through the window of an institution. Starting from this statement, the research focuses on the importance of transparency in public governance and on the framework for identifying and assessing this concept. Furthermore, this paper also analysis the limits of this notion in order to maintain its significance and effectiveness. Thus, based on the literature review, this study summarizes the opinions and arguments of various authors in the field regarding the notion of transparency in the public sector. At the same time, it analysis the conclusions of empirical studies on this topic. The results of the study reveal the importance and necessity of information disclosure among different users for increasing citizens' trust in government and achieving good governance. However, the positive aspects of transparency tend to be overestimated and considering the ambiguity of this concept it should be carefully handled.

  14. Declarative memory.

    Science.gov (United States)

    Riedel, Wim J; Blokland, Arjan

    2015-01-01

    Declarative Memory consists of memory for events (episodic memory) and facts (semantic memory). Methods to test declarative memory are key in investigating effects of potential cognition-enhancing substances--medicinal drugs or nutrients. A number of cognitive performance tests assessing declarative episodic memory tapping verbal learning, logical memory, pattern recognition memory, and paired associates learning are described. These tests have been used as outcome variables in 34 studies in humans that have been described in the literature in the past 10 years. Also, the use of episodic tests in animal research is discussed also in relation to the drug effects in these tasks. The results show that nutritional supplementation of polyunsaturated fatty acids has been investigated most abundantly and, in a number of cases, but not all, show indications of positive effects on declarative memory, more so in elderly than in young subjects. Studies investigating effects of registered anti-Alzheimer drugs, cholinesterase inhibitors in mild cognitive impairment, show positive and negative effects on declarative memory. Studies mainly carried out in healthy volunteers investigating the effects of acute dopamine stimulation indicate enhanced memory consolidation as manifested specifically by better delayed recall, especially at time points long after learning and more so when drug is administered after learning and if word lists are longer. The animal studies reveal a different picture with respect to the effects of different drugs on memory performance. This suggests that at least for episodic memory tasks, the translational value is rather poor. For the human studies, detailed parameters of the compositions of word lists for declarative memory tests are discussed and it is concluded that tailored adaptations of tests to fit the hypothesis under study, rather than "off-the-shelf" use of existing tests, are recommended.

  15. Inventory transparency for agricultural produce through IOT

    Science.gov (United States)

    Srinivasan, S. P.; Sorna Shanthi, D.; Anand, Aashish V.

    2017-06-01

    Re-structuring the practices of traditional inventory management is becoming more essential to optimize the supply chain transparency and accuracy of agricultural produce. A flexible and transparent inventory management system is becoming the need of any agricultural commodity. It was noticed that the major setback for the farmers who are the suppliers of the farm produce is due to poor supply chain integration. The recent advent technologies and IT explosion can bring up a greater impact in the process of storing, tracking, distributing and monitoring perishable agriculture produce of day to day life. The primary focus of this paper is to integrate IoT into inventory management and other inbound logistics management of agriculture produce. The unique features of agricultural produce like a prediction of supply, demand, the location of warehouses, distribution and tracking of inventory can be integrated through IoT. This paper proposes a conceptual framework for inventory management transparency involved in the supply chain of agriculture produce.

  16. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  17. [Transparency in public health decision-making].

    Science.gov (United States)

    García-Altés, Anna; Argimon, Josep M

    2016-11-01

    Improving the quality and transparency of governmental healthcare decision-making has an impact on the health of the population through policies, organisational management and clinical practice. Moreover, the comparison between healthcare centres and the transparent feedback of results to professionals and to the wider public contribute directly to improved results. The "Results Centre" of the Catalan healthcare system measures and disseminates the results achieved by the different healthcare centres in order to facilitate a shared decision-making process, thereby enhancing the quality of healthcare provided to the population of Catalonia (Spain). This is a pioneering initiative in Spain and is aligned with the most advanced countries in terms of policies of transparency and accountability. Copyright © 2016 SESPAS. Publicado por Elsevier España, S.L.U. All rights reserved.

  18. Semantic transparency affects morphological priming . . . eventually.

    Science.gov (United States)

    Heyer, Vera; Kornishova, Dana

    2018-05-01

    Semantic transparency has been in the focus of psycholinguistic research for decades, with the controversy about the time course of the application of morpho-semantic information during the processing of morphologically complex words not yet resolved. This study reports two masked priming studies with English - ness and Russian - ost' nominalisations, investigating how semantic transparency modulates native speakers' morphological priming effects at short and long stimulus onset asynchronies (SOAs). In both languages, we found increased morphological priming for nominalisations at the transparent end of the scale (e.g. paleness - pale) in comparison to items at the opaque end of the scale (e.g. business - busy) but only at longer prime durations. The present findings are in line with models that posit an initial phase of morpho-orthographic (semantically blind) decomposition.

  19. Transparent Ceramic Scintillator Fabrication, Properties and Applications

    International Nuclear Information System (INIS)

    Cherepy, N.J.; Kuntz, J.D.; Roberts, J.J.; Hurst, T.A.; Drury, O.B.; Sanner, R.D.; Tillotson, T.M.; Payne, S.A.

    2008-01-01

    Transparent ceramics offer an alternative to single crystals for scintillator applications such as gamma ray spectroscopy and radiography. We have developed a versatile, scaleable fabrication method, using Flame Spray Pyrolysis (FSP) to produce feedstock which is readily converted into phase-pure transparent ceramics. We measure integral light yields in excess of 80,000 Ph/MeV with Cerium-doped Garnets, and excellent optical quality. Avalanche photodiode readout of Garnets provides resolution near 6%. For radiography applications, Lutetium Oxide offers a high performance metric and is formable by ceramics processing. Scatter in transparent ceramics due to secondary phases is the principal limitation to optical quality, and afterglow issues that affect the scintillation performance are presently being addressed

  20. Transparent Solar Concentrator for Flat Panel Display

    Science.gov (United States)

    Yeh, Chia-Hung; Chang, Fuh-Yu; Young, Hong-Tsu; Hsieh, Tsung-Yen; Chang, Chia-Hsiung

    2012-06-01

    A new concept of the transparent solar concentrator for flat panel display is experimentally demonstrated without adversely affecting the visual effects. The solar concentrator is based on a solar light-guide plate with micro prisms, not only increasing the absorption area of solar energy but also enhancing the conversion efficiency. The incident light is guided by the designed solar light-guide plate according to the total internal reflection (TIR), and converted into electrical power by photovoltaic solar cells. The designed transparent solar concentrator was made and measured with high transparency, namely 94.8%. The developed solar energy system for display can store energy and supply the bias voltage to light on two light-emitting diodes (LEDs) successfully.