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Sample records for transparent non-volatile memory

  1. ZnO as dielectric for optically transparent non-volatile memory

    International Nuclear Information System (INIS)

    Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

    2009-01-01

    This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

  2. Non-volatile memories

    CERN Document Server

    Lacaze, Pierre-Camille

    2014-01-01

    Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

  3. Emerging non-volatile memories

    CERN Document Server

    Hong, Seungbum; Wouters, Dirk

    2014-01-01

    This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

  4. Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

    International Nuclear Information System (INIS)

    Chang, Yu-Chi; Wang, Yeong-Her

    2015-01-01

    Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10 5 ), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications

  5. Graphene based non-volatile memory devices.

    Science.gov (United States)

    Wang, Xiaomu; Xie, Weiguang; Xu, Jian-Bin

    2014-08-20

    With the continuous advance of modern electronics, the demand for non-volatile memory cells rapidly grows. As a promising material for post-silicon electronic applications, graphene non-volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties. This research news briefly summarizes the recent progress in this area. Appealing research activities and technical trends are highlighted. Afterwards, requirements and aims of future graphene non-volatile memory cells that may possibly influence their commercialization are also discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Securing non-volatile memory regions

    Science.gov (United States)

    Faraboschi, Paolo; Ranganathan, Parthasarathy; Muralimanohar, Naveen

    2013-08-20

    Methods, apparatus and articles of manufacture to secure non-volatile memory regions are disclosed. An example method disclosed herein comprises associating a first key pair and a second key pair different than the first key pair with a process, using the first key pair to secure a first region of a non-volatile memory for the process, and using the second key pair to secure a second region of the non-volatile memory for the same process, the second region being different than the first region.

  7. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  8. Non-volatile memory for checkpoint storage

    Science.gov (United States)

    Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.; Coteus, Paul W.; Gara, Alan; Heidelberger, Philip; Jeanson, Mark J.; Kopcsay, Gerard V.; Ohmacht, Martin; Takken, Todd E.

    2014-07-22

    A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, the non-volatile memory is a pluggable flash memory card.

  9. Non-volatile magnetic random access memory

    Science.gov (United States)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  10. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    International Nuclear Information System (INIS)

    Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

    2014-01-01

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

  11. VLSI-design of non-volatile memories

    CERN Document Server

    Campardo, Giovanni; Novosel, David

    2005-01-01

    VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, provid

  12. Towards the development of flexible non-volatile memories.

    Science.gov (United States)

    Han, Su-Ting; Zhou, Ye; Roy, V A L

    2013-10-11

    Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  14. Method for refreshing a non-volatile memory

    Science.gov (United States)

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  15. Non Volatile Flash Memory Radiation Tests

    Science.gov (United States)

    Irom, Farokh; Nguyen, Duc N.; Allen, Greg

    2012-01-01

    Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

  16. Non-volatile memory based on the ferroelectric photovoltaic effect.

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Lim, Zhi Shiuh; Zou, Xi; Chen, Lang; Ramesh, R; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~10(5) rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

  17. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  18. Active non-volatile memory post-processing

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

    2017-04-11

    A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

  19. Non-Volatile Memory Technology Symposium 2000: Proceedings

    Science.gov (United States)

    Aranki, Nazeeh (Editor)

    2000-01-01

    This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.

  20. Development of non-volatile semiconductor memory

    Science.gov (United States)

    Heikkila, W. W.

    1979-01-01

    A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.

  1. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  2. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    Science.gov (United States)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  3. Non-Volatile Memory Technology Symposium 2001: Proceedings

    Science.gov (United States)

    Aranki, Nazeeh; Daud, Taher; Strauss, Karl

    2001-01-01

    This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

  4. Use of non-volatile memories for SSC detector readout

    International Nuclear Information System (INIS)

    Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

    1990-01-01

    Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

  5. Integrated photonics with programmable non-volatile memory.

    Science.gov (United States)

    Song, Jun-Feng; Luo, Xian-Shu; Lim, Andy Eu-Jin; Li, Chao; Fang, Qing; Liow, Tsung-Yang; Jia, Lian-Xi; Tu, Xiao-Guang; Huang, Ying; Zhou, Hai-Feng; Lo, Guo-Qiang

    2016-03-04

    Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications.

  6. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan

    2016-03-16

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  7. Bioorganic nanodots for non-volatile memory devices

    International Nuclear Information System (INIS)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-01-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

  8. Highly Stretchable Non-volatile Nylon Thread Memory.

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-13

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene- PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 10(3) is maintained for a retention time of 10(6)s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  9. Highly Stretchable Non-volatile Nylon Thread Memory

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  10. PREFACE: Emerging non-volatile memories: magnetic and resistive technologies Emerging non-volatile memories: magnetic and resistive technologies

    Science.gov (United States)

    Dieny, B.; Jagadish, Chennupati

    2013-02-01

    In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate field-effect transistor, nano-electro-mechanical switch, spin-transfer torque random access memories (STTRAM), various types of resistive RAM, in particular redox RAM, nanothermal phase change RAM, electronic effects RAM, macromolecular memories and molecular RAM). In this report, spin-transfer torque MRAM and redox RRAM were identified as two emerging memory technologies recommended for accelerated research and development leading to scaling and commercialization of non-volatile RAM to and beyond the 16nm generation. Nowadays, there is an intense research and development effort in microelectronics on these two technologies, one based on spintronic phenomena (tunnel magnetoresistance and spin-transfer torque), the other based on migration of vacancies or ions in an insulating matrix driven by oxydo-reduction potentials. Both technologies could be used for standalone or embedded applications. In this context, it appeared timely to publish a cluster of review articles related to these two technologies. In this cluster, the first two articles introduce the general principles of spin-transfer torque RAM and of thermally assisted RAM. The third presents a broader range of applications for this integrated CMOS/magnetic tunnel junction technology for low-power electronics. The fourth paper presents more advanced research on voltage control of magnetization switching with the aim of dramatically reducing the write energy in MRAM. The last two papers deal with two categories of resistive RAM, one based on the migration of cations, the other one based on nanowires. We thank all the authors and reviewers for their contribution to this cluster issue. Our special thanks are due to Dr Olivia Roche, Publisher, and Dr

  11. Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

    OpenAIRE

    Hao Zhu; Qiliang Li

    2015-01-01

    This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent...

  12. Low-cost and nanoscale non-volatile memory concept for future silicon chips

    NARCIS (Netherlands)

    Lankhorst, M.H.R.; Ketelaars, B.W.S.M.M.; Wolters, Robertus A.M.

    2005-01-01

    Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great commercial success, the semiconductor industry is searching for alternative non-volatile memories with improved performance and better opportunities

  13. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials.

    Science.gov (United States)

    Tan, Chaoliang; Liu, Zhengdong; Huang, Wei; Zhang, Hua

    2015-05-07

    Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions.

  14. Organic non-volatile memories from ferroelectric phase-separated blends

    NARCIS (Netherlands)

    Asadi, Kamal; De Leeuw, Dago M.; De Boer, Bert; Blom, Paul W. M.

    New non-volatile memories are being investigated to keep up with the organic-electronics road map(1). Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels(2). However, in

  15. Role of Non-Volatile Memories in Automotive and IoT Markets

    Science.gov (United States)

    2017-03-01

    Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...automotive and Internet of Things ( IoT ) markets. Keywords: Embedded flash; Microcontrollers, Automotive; Internet of Things, IoT ; Non-volatile memories...volatile memory. The Internet of Things ( IoT ) is centered on providing distributed intelligence, sensing and connectivity to electronics around

  16. Radiation Hardened Nanobridge based Non-volatile Memory for Space Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA Phase I SBIR program would develop and demonstrate radiation hardened nanobridge based non-volatile memory (NVM) for space applications. Specifically, we...

  17. Rad hard Non volatile memory for FPGA boot loading, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation-hardened non volatile memory is needed to store the golden copy of the image(s) has not kept pace with the advances in FPGAs. Consider that a single image...

  18. Rad Hard Non Volatile Memory for FPGA BootLoading, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation-hardened non volatile memory (NVM) is needed to store the golden copy of the image(s) has not kept pace with the advances in FPGAs. Consider that a single...

  19. Self-assembled three-dimensional non-volatile memories

    NARCIS (Netherlands)

    Abelmann, Leon; Tas, Niels Roelof; Berenschot, Johan W.; Elwenspoek, Michael Curt

    2010-01-01

    The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised

  20. A non-volatile memory device consisting of graphene oxide covalently functionalized with ionic liquid.

    Science.gov (United States)

    Bhunia, Prasenjit; Hwang, Eunhee; Min, Misook; Lee, Junghyun; Seo, Sohyeon; Some, Surajit; Lee, Hyoyoung

    2012-01-21

    We introduce non-volatile resistive crossbar memory based on ionic liquid covalently functionalized on a partially reduced graphene oxide (PrGO). The write-read-erase-read (WRER) cycles were very stable after several hundred cycles and the retention time of both the ON and OFF states was stable for over 1000 s, indicating that the device we developed can function as a non-volatile memory device. This journal is © The Royal Society of Chemistry 2012

  1. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.

    2017-03-14

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  2. Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

    Directory of Open Access Journals (Sweden)

    Hao Zhu

    2015-12-01

    Full Text Available This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications.

  3. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

    International Nuclear Information System (INIS)

    Hoffman, J; Ahn, C H; Hong, X

    2011-01-01

    Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr 0.2 Ti 0.8 O 3 /La 1-x Sr x MnO 3 (PZT/LSMO), PZT/La 1-x Ca x MnO 3 (PZT/LCMO) and PZT/La 1-x Sr x CoO 3 (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.

  4. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.

    Science.gov (United States)

    Hoffman, J; Hong, X; Ahn, C H

    2011-06-24

    Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr(0.2)Ti(0.8)O(3)/La(1 - x)Sr(x)MnO(3) (PZT/LSMO), PZT/La(1 - x)Ca(x)MnO(3) (PZT/LCMO) and PZT/La(1 - x)Sr(x)CoO(3) (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.

  5. Non-volatile organic transistor memory devices using the poly(4-vinylpyridine)-based supramolecular electrets.

    Science.gov (United States)

    Chou, Y-H; Chiu, Y-C; Lee, W-Y; Chen, W-C

    2015-02-14

    Supramolecular electrets consisting of poly(4-vinylpyridine) (P4VP) and conjugated molecules of phenol, 2-naphthol and 2-hydroxyanthracene were investigated for non-volatile transistor memory applications. The memory windows of these supramolecular electret devices were significantly enhanced upon increasing the π-conjugation size of the molecule. A high ON/OFF current ratio of more than 10(7) over 10(4) s was achieved on the supramolecule based memory devices.

  6. Radiation Tolerant, High Capacity Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The need for reliable, high capacity, radiation tolerant nonvolatile memory exists in many Human space flight applications. Most projects rely on COTS hardware for a...

  7. Physical principles and current status of emerging non-volatile solid state memories

    Science.gov (United States)

    Wang, L.; Yang, C.-H.; Wen, J.

    2015-07-01

    Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

  8. Overview of radiation effects on emerging non-volatile memory technologies

    Directory of Open Access Journals (Sweden)

    Fetahović Irfan S.

    2017-01-01

    Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

  9. Low-power non-volatile spintronic memory: STT-RAM and beyond

    International Nuclear Information System (INIS)

    Wang, K L; Alzate, J G; Khalili Amiri, P

    2013-01-01

    The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

  10. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    -voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 10(2) to 10(4). On the other hand, one of the compounds reveals higher...

  11. Low-temperature process steps for realization of non-volatile memory devices

    NARCIS (Netherlands)

    Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

    2007-01-01

    In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

  12. High-performance non-volatile organic ferroelectric memory on banknotes.

    Science.gov (United States)

    Khan, M A; Bhansali, Unnat S; Alshareef, H N

    2012-04-24

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser

    2012-03-21

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  15. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  16. Non-volatile memory with self-assembled ferrocene charge trapping layer

    Science.gov (United States)

    Zhu, Hao; Hacker, Christina A.; Pookpanratana, Sujitra J.; Richter, Curt A.; Yuan, Hui; Li, Haitao; Kirillov, Oleg; Ioannou, Dimitris E.; Li, Qiliang

    2013-07-01

    A metal/oxide/molecule/oxide/Si capacitor structure containing redox-active ferrocene molecules has been fabricated for non-volatile memory application. Cyclic voltammetry and X-ray photoelectron spectroscopy were used to measure the molecules in the structure, showing that the molecules attach on SiO2/Si and the molecules are functional after device fabrication. These solid-state molecular memory devices have fast charge-storage speed and can endure more than 109 program/erase cycles. This excellent performance is derived from the intrinsic properties of the redox-active molecules and the hybrid Si-molecular device structure. These molecular devices are very attractive for future high-level non-volatile memory applications.

  17. High-Speed Non-Volatile Optical Memory: Achievements and Challenges

    Directory of Open Access Journals (Sweden)

    Vadym Zayets

    2017-01-01

    Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

  18. Synthesis, characterization, and non-volatile memory device application of an N-substituted heteroacene.

    Science.gov (United States)

    Wang, Chengyuan; Wang, Jiangxin; Li, Pei-Zhou; Gao, Junkuo; Tan, Si Yu; Xiong, Wei-Wei; Hu, Benlin; Lee, Pooi See; Zhao, Yanli; Zhang, Qichun

    2014-03-01

    N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory.

    Science.gov (United States)

    Ng, Tse Nga; Schwartz, David E; Lavery, Leah L; Whiting, Gregory L; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.

  20. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    Science.gov (United States)

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

  1. Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices.

    Science.gov (United States)

    Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Wang, Lianhui; Huang, Wei; Zhang, Hua

    2013-01-11

    A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.

    Science.gov (United States)

    Hwang, Sun Kak; Bae, Insung; Kim, Richard Hahnkee; Park, Cheolmin

    2012-11-20

    A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Metal-organic molecular device for non-volatile memory storage

    International Nuclear Information System (INIS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-01-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  4. Models for Total-Dose Radiation Effects in Non-Volatile Memory

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip Montgomery; Wix, Steven D.

    2017-04-01

    The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models and compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.

  5. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

    International Nuclear Information System (INIS)

    Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

    2008-01-01

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

  6. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template.

    Science.gov (United States)

    Miura, Atsushi; Tsukamoto, Rikako; Yoshii, Shigeo; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi

    2008-06-25

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co(3)O(4)) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented.

  7. Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices.

    Science.gov (United States)

    Chiu, Yu-Cheng; Sun, Han-Sheng; Lee, Wen-Ya; Halila, Sami; Borsali, Redouane; Chen, Wen-Chang

    2015-10-28

    Oligosaccharides are one of the most promising biomaterials because they are abundant, renewable, diversified, and biosourced. The use of oligo- or polysaccharides for high-performance non-volatile organic field-effect-transistor memory is demonstrated herein. The charge-storage mechanism is attributed to charged hydroxyl groups that induce stronger hydrogen bonding, thus leading to the stabilization of trapped charges. This study reveals a promising future for green memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

    International Nuclear Information System (INIS)

    Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

    2014-01-01

    Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

  9. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  10. Fabrication of spray-printed organic non-volatile memory devices for low cost electronic applications

    International Nuclear Information System (INIS)

    Cha, An-Na; Ji, Yongsung; Lee, Sang-A; Noh, Yong-Young; Na, Seok-In; Bae, Sukang; Lee, Sanghyun; Kim, Tae-Wook

    2015-01-01

    Highlights: • PS:PCBM-based organic non-volatile memory devices was fabricated using spray printing. • The thickness of the film was controlled by adjusting the concentration of the PS:PCBM solutions. • The roughness of spray-printed films was poorer than that of the spin-coated film. • The minimum thickness of the printed film influenced the memory behavior more than the surface roughness. • The spray printed PS:PCBM showed excellent unipolar switching, reliability, retention, and endurance characteristics. - Abstract: We fabricated polystyrene (PS) and 6-phenyl-C61 butyric acid methyl ester (PCBM) based organic non-volatile memory devices using a spray printing technique. Due to the distinct operational properties of this technique, significant differences were observed in the macro- and microscopic features (e.g., the film quality and surface roughness) of the devices. The thickness of the film was successfully controlled by adjusting the concentration of the PS:PCBM solutions sprayed. Although the roughness of the spray-printed films was poorer than that of the spin-coated film, negligible differences were observed in the basic memory characteristics (e.g., the operation voltage range, turn on and off voltage, retention and endurance). In particular, the printing-based organic memory devices were successfully switched, as exhibited by the on/off ratio greater than two orders of magnitude at 0.3 V read voltage. The resistance state of all of the devices was maintained for more than 10 4 s, indicating their non-volatile characteristics

  11. A fast and low-power microelectromechanical system-based non-volatile memory device.

    Science.gov (United States)

    Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E B; Park, Yung Woo

    2011-01-01

    Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices.

  12. Design exploration of emerging nano-scale non-volatile memory

    CERN Document Server

    Yu, Hao

    2014-01-01

    This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

  13. Non-volatile main memory management methods based on a file system.

    Science.gov (United States)

    Oikawa, Shuichi

    2014-01-01

    There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

  14. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

    International Nuclear Information System (INIS)

    Zhu Xiaoxiao; Li Qiliang; Ioannou, Dimitris E; Gu, Diefeng; Baumgart, Helmut; Bonevich, John E; Suehle, John S; Richter, Curt A

    2011-01-01

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO 2 charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO 2 increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO 2 thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  15. Anchor-free NEMS non-volatile memory cell for harsh environment data storage

    International Nuclear Information System (INIS)

    Singh, Pushpapraj; Chua, Geng Li; Liang, Ying Shun; Jayaraman, Karthik Gopal; Do, Anh Tuan; Kim, Tony Tae-Hyoung

    2014-01-01

    This work demonstrates a novel anchor-free nano-electromechanical (NEMS) based non-volatile memory cell, suitable for high temperature (T ≤ 300 °C) and radiation prone harsh environment applications. The anchor-free circular metal beam is actuated by electrostatic force and is held in one of the bi-stable memory states by adhesion force between two smooth metal surfaces in contact. Smooth metal layers form strong van der Waals stiction between two surfaces in contact and memory detection (Logic-‘1’ / Logic-‘0’) is obtained by detecting the conductance between two fixed contacts. This anchor-free design offers highest density (9F 2 footprint) compared to other mechanical memory devices reported to date. (paper)

  16. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells.

    Science.gov (United States)

    Zhu, Xiaoxiao; Li, Qiliang; Ioannou, Dimitris E; Gu, Diefeng; Bonevich, John E; Baumgart, Helmut; Suehle, John S; Richter, Curt A

    2011-06-24

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO(2) charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO(2) increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO(2) thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  17. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

    Science.gov (United States)

    Zhu, Xiaoxiao; Li, Qiliang; Ioannou, Dimitris E.; Gu, Diefeng; Bonevich, John E.; Baumgart, Helmut; Suehle, John S.; Richter, Curt A.

    2011-06-01

    We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO2 increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO2 thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.

  18. Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

    Science.gov (United States)

    Hwang, Sun Kak; Min, Sung-Yong; Bae, Insung; Cho, Suk Man; Kim, Kang Lib; Lee, Tae-Woo; Park, Cheolmin

    2014-05-28

    One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10(2) with time-dependent data retention and read/write endurance of more than 10(4) seconds and 10(2) cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices.

    Science.gov (United States)

    Zhang, Xuejiao; Xu, Zhiwei; Sun, Bai; Liu, Jianjun; Cao, Yanyan; Qiao, Haixia; Huang, Yong; Pang, Xiaofeng

    2018-04-01

    The recent discovery of non-volatile resistive-switching memory is a promising phenomenon for the semiconductor industry and electronic device technology. In our work, CaWO4 nanoparticles were synthesised through a one-step hydrothermal reaction. A resistive-switching memory device with Ag/CaWO4/fluorine-doped tin oxide structure was prepared. This device presents photo-induced multiple-state memory behaviour at room temperature. This study is valuable for exploring multi-functional materials and their applications in photo-controlled multiple-state non-volatile memories.

  20. A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-02-01

    Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

  1. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Science.gov (United States)

    Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

    2017-05-01

    Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  2. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  3. Non-volatile organic memory with sub-millimetre bending radius.

    Science.gov (United States)

    Kim, Richard Hahnkee; Kim, Hae Jin; Bae, Insung; Hwang, Sun Kak; Velusamy, Dhinesh Babu; Cho, Suk Man; Takaishi, Kazuto; Muto, Tsuyoshi; Hashizume, Daisuke; Uchiyama, Masanobu; André, Pascal; Mathevet, Fabrice; Heinrich, Benoit; Aoyama, Tetsuya; Kim, Dae-Eun; Lee, Hyungsuk; Ribierre, Jean-Charles; Park, Cheolmin

    2014-04-08

    High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

  4. Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices.

    Science.gov (United States)

    Kannan, V; Rhee, J K

    2013-08-14

    In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/CdSe-ZnS core-shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of ~1000. The facile solution processed device exhibited excellent endurance characteristics for 200,000 switching cycles. Retention tests showed good stability for over 20,000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping-detrapping in core-shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I-V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.

  5. A robust molecular platform for non-volatile memory devices with optical and magnetic responses.

    Science.gov (United States)

    Simão, Cláudia; Mas-Torrent, Marta; Crivillers, Núria; Lloveras, Vega; Artés, Juan Manuel; Gorostiza, Pau; Veciana, Jaume; Rovira, Concepció

    2011-05-01

    Bistable molecules that behave as switches in solution have long been known. Systems that can be reversibly converted between two stable states that differ in their physical properties are particularly attractive in the development of memory devices when immobilized in substrates. Here, we report a highly robust surface-confined switch based on an electroactive, persistent organic radical immobilized on indium tin oxide substrates that can be electrochemically and reversibly converted to the anion form. This molecular bistable system behaves as an extremely robust redox switch in which an electrical input is transduced into optical as well as magnetic outputs under ambient conditions. The fact that this molecular surface switch, operating at very low voltages, can be patterned and addressed locally, and also has exceptionally high long-term stability and excellent reversibility and reproducibility, makes it a very promising platform for non-volatile memory devices.

  6. Non-volatile memory devices with redox-active diruthenium molecular compound

    International Nuclear Information System (INIS)

    Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

    2016-01-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

  7. Non-volatile memory devices with redox-active diruthenium molecular compound.

    Science.gov (United States)

    Pookpanratana, S; Zhu, H; Bittle, E G; Natoli, S N; Ren, T; Richter, C A; Li, Q; Hacker, C A

    2016-03-09

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a 'click' reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The 'click' reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  8. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    International Nuclear Information System (INIS)

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung

    2015-01-01

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research

  9. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    Science.gov (United States)

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  10. Origami-based tunable truss structures for non-volatile mechanical memory operation.

    Science.gov (United States)

    Yasuda, Hiromi; Tachi, Tomohiro; Lee, Mia; Yang, Jinkyu

    2017-10-17

    Origami has recently received significant interest from the scientific community as a method for designing building blocks to construct metamaterials. However, the primary focus has been placed on their kinematic applications by leveraging the compactness and auxeticity of planar origami platforms. Here, we present volumetric origami cells-specifically triangulated cylindrical origami (TCO)-with tunable stability and stiffness, and demonstrate their feasibility as non-volatile mechanical memory storage devices. We show that a pair of TCO cells can develop a double-well potential to store bit information. What makes this origami-based approach more appealing is the realization of two-bit mechanical memory, in which two pairs of TCO cells are interconnected and one pair acts as a control for the other pair. By assembling TCO-based truss structures, we experimentally verify the tunable nature of the TCO units and demonstrate the operation of purely mechanical one- and two-bit memory storage prototypes.Origami is a popular method to design building blocks for mechanical metamaterials. Here, the authors assemble a volumetric origami-based structure, predict its axial and rotational movements during folding, and demonstrate the operation of mechanical one- and two-bit memory storage.

  11. Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass

    Science.gov (United States)

    Maimon, J.; Hunt, K.; Rodgers, J.; Burcin, L.; Knowles, K.

    2004-02-01

    We report on the progress of a recent addition to non-volatile solid state memory technologies suited for space and other ionizing radiation environments. We summarize the material and processing science behind the current generation of chalcogenide phase-change memories fabricated on CMOS structures. The chalcogenide material used for phase-change applications in rewritable optical storage (Ge2Sb2Te5) has been integrated with a radiation hardened CMOS process to produce 64kbit memory arrays. On selected arrays electrical testing demonstrated up to 100% memory cell yield, 100ns programming and read speeds, and write currents as low as 1mA/bit. Devices functioned normally from - 55°C to 125°C. Write/read endurance has been demonstrated to 1 × 108 before first bit failure. Radiation results show no degradation to the hardened CMOS or effects that can be attributed to the phase-change material. Future applications of the technology are discussed.

  12. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  13. Formation of high density TiN nanocrystals and its application in non-volatile memories

    International Nuclear Information System (INIS)

    Li Xuelin; Chen Guoguang; Feng Shunshan

    2008-01-01

    Non-volatile memory based on TiN nanocrystal (TiN-NC) charge storage nodes embedded in SiO 2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN-NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5nm is confirmed by transmission electron microscopy and x-ray diffraction. x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiN x O y /SiON oxide between TiN-NC and SiO 2 , which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5V and an endurance cycle throughout 10 5 . Its charging mechanism, which is interpreted from the analysis of programming speed (dV th /dt) and the gate leakage versus voltage characteristics (I g vs V g ), has been explained by direct tunnelling for tunnel oxide and Fowler–Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler–Nordheim tunnelling for both the oxides at programming voltages higher than 9 V

  14. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Directory of Open Access Journals (Sweden)

    Fabrizio Riente

    2017-05-01

    Full Text Available Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  15. Formation of high density TiN nanocrystals and its application in non-volatile memories

    Science.gov (United States)

    Li, Xue-Lin; Feng, Shun-Shan; Chen, Guo-Guang

    2008-03-01

    Non-volatile memory based on TiN nanocrystal (TiN-NC) charge storage nodes embedded in SiO2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN-NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5nm is confirmed by transmission electron microscopy and x-ray diffraction. x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiNxOy/SiON oxide between TiN-NC and SiO2, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5V and an endurance cycle throughout 105. Its charging mechanism, which is interpreted from the analysis of programming speed (dVth/dt) and the gate leakage versus voltage characteristics (Ig vs Vg), has been explained by direct tunnelling for tunnel oxide and Fowler-Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler-Nordheim tunnelling for both the oxides at programming voltages higher than 9 V.

  16. Non-volatile memory devices based on polystyrene derivatives with electron-donating oligofluorene pendent moieties.

    Science.gov (United States)

    Liu, Cheng-Liang; Hsu, Jung-Ching; Chen, Wen-Chang; Sugiyama, Kenji; Hirao, Akira

    2009-09-01

    We report bistable non-volatile memory devices based on polystyrene derivatives containing pendent electron-donating mono-, di-, and tri(9,9-dihexylfluorene), which are denoted as poly(St-Fl), poly(St-Fl(2)), and poly(St-Fl(3)), respectively. The effects of the oligofluorene chain lengths and polymer surface structures on the memory characteristics were explored. Poly(St-Fl)-, poly(St-Fl(2))-, and poly(St-Fl(3))-based devices exhibited a flash memory characteristic with different turn-on threshold voltages of 2.8, 2.0, and 1.8 V, respectively, which was on the reverse trend with the highest occupied molecular orbital levels of -5.86, -5.80, and -5.77 eV. Moreover, the memory device showed a high ON/OFF current ratio of 2.5 x 10(4) and a long retention time of 10(4) s. The possible mechanism of the switching behavior was explained by the space-charge-limited-current theory and filamentary conduction. The larger aggregation domain size of the polymer thin film processed from the mixed solvent of chlorobenzene/N,N-dimethylformamide probably promoted the diffusion of the Al atoms into the polymer film and formed the conduction channel. Thus, it significantly reduced the turn-on threshold voltage on the studied polymer memory devices. The present study suggested that the polymer memory characteristics could be efficiently tuned through the pendent conjugated chain length and surface structures.

  17. A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

    Energy Technology Data Exchange (ETDEWEB)

    De, Arup [Univ. of California, San Diego, CA (United States)

    2014-01-01

    Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

  18. Process Qualification Strategy for Advances Embedded Non Volatile Memory Technology : The Philips' 0.18um Embedded Flash Case

    NARCIS (Netherlands)

    Tao, Guoqiao; Scarpa, Andrea; van Dijk, Kitty; Kuper, Fred G.

    2003-01-01

    A qualification strategy for advanced embedded non-volatile memory technology has been revealed. This strategy consists of: a thorough understanding of the requirements, extensive use and frequent update of the FMEA (failure mode effect analysis), a qualification plan with excellent coverage of all

  19. Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes

    NARCIS (Netherlands)

    Tao, Guoqiao; Scarpa, Andrea; van Marwijk, Leo; van Dijk, Kitty; Kuper, F.G.

    A fast wafer level reliability structure and evaluation method has been developed for stress induced leakage current (SILC) in non-volatile memory processes. The structure is based on parallel floating gate cell arrays. The evaluation method is straightforward, and not time-consuming. The

  20. Si nano crystals by ultra-low energy ion implantation for non-volatile memory applications

    International Nuclear Information System (INIS)

    Coffin, H.; Bonafos, C.; Schamm, S.; Carrada, M.; Cherkashin, N.; Ben Assayag, G.; Dimitrakis, P.; Normand, P.; Respaud, M.; Claverie, A.

    2005-01-01

    In nanocrystal (nc) metal-oxide-semiconductor (MOS) memory structures, a fine control of nc location and population is required for pinpointing the optimal device architectures. In this work, we show how to manipulate and control the depth-position, size and surface density of two dimensional (2D) arrays of Si ncs embedded in thin ( 2 layers, fabricated by ultra-low energy (typically 1 keV) ion implantation and subsequent annealing. The influence of implantation and annealing conditions on the nc characteristics (e.g. size, density) and the charge storage properties of associated MOS structures is reported with particular emphasis upon the effect of annealing in N 2 -diluted-O 2 gas mixture. The latter annealing conditions restore the integrity of the oxide and allow for the fabrication of non-volatile memory devices operating at low-gate voltages. Annealing in diluted oxygen has also an effect on the population of silicon ncs. Their evolution has been studied as a function of the annealing duration under N 2 + O 2 at 900 o C. An extended spherical Deal-Grove model for the self-limiting oxidation of embedded Si ncs has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions are in agreement with the experimental results

  1. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Science.gov (United States)

    Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-04-09

    As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

  2. An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

    Science.gov (United States)

    Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

    2001-01-01

    Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

  3. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    Science.gov (United States)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  4. Unipolar bistable switching of organic non-volatile memory devices with poly(styrene-co-styrenesulfonic acid Na).

    Science.gov (United States)

    Ji, Yongsung; Cho, Byungjin; Song, Sunghoon; Choe, Minhyeok; Kim, Tae-Wook; Kim, Joon-Seop; Choi, Byung-Sang; Lee, Takhee

    2011-02-01

    We demonstrated unipolar organic bistable memory devices with 8 x 8 cross-bar array type structure. The active material for the organic non-volatile memory devices is poly(styrene-co-styrenesulfonic acid Na) (PSSANa). From the electrical measurements of the PSSANa organic memory devices, we observed rewritable unipolar switching behaviors with a stable endurance and narrow cumulative probability. Also the PSSANa memory devices exhibited a uniform cell-to-cell switching with a high ON/OFF ratio of approximately 10(5) and good retention time of approximately 10(4) seconds without significant degradation.

  5. Improving reliability of non-volatile memory technologies through circuit level techniques and error control coding

    Science.gov (United States)

    Yang, Chengen; Emre, Yunus; Cao, Yu; Chakrabarti, Chaitali

    2012-12-01

    Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very low standby power. Unfortunately, in scaled technologies, high storage density comes at a price of lower reliability. In this article, we first study in detail the causes of errors for PRAM and STT-RAM. We see that while for multi-level cell (MLC) PRAM, the errors are due to resistance drift, in STT-RAM they are due to process variations and variations in the device geometry. We develop error models to capture these effects and propose techniques based on tuning of circuit level parameters to mitigate some of these errors. Unfortunately for reliable memory operation, only circuit-level techniques are not sufficient and so we propose error control coding (ECC) techniques that can be used on top of circuit-level techniques. We show that for STT-RAM, a combination of voltage boosting and write pulse width adjustment at the circuit-level followed by a BCH-based ECC scheme can reduce the block failure rate (BFR) to 10-8. For MLC-PRAM, a combination of threshold resistance tuning and BCH-based product code ECC scheme can achieve the same target BFR of 10-8. The product code scheme is flexible; it allows migration to a stronger code to guarantee the same target BFR when the raw bit error rate increases with increase in the number of programming cycles.

  6. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm.

    Science.gov (United States)

    Zhao, Chun; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

    2014-07-15

    Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high -k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high -k dielectrics for the performance improvement. Application of high -k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

  7. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

    Directory of Open Access Journals (Sweden)

    Chun Zhao

    2014-07-01

    Full Text Available Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

  8. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    Science.gov (United States)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  9. MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

    International Nuclear Information System (INIS)

    Shenoy, Rohit S; Burr, Geoffrey W; Virwani, Kumar; Jackson, Bryan; Padilla, Alvaro; Narayanan, Pritish; Rettner, Charles T; Shelby, Robert M; Bethune, Donald S; Rice, Philip M; Topuria, Teya; Kellock, Andrew J; Kurdi, Bülent; Raman, Karthik V; BrightSky, Matthew; Joseph, Eric; Gopalakrishnan, Kailash

    2014-01-01

    Several attractive applications call for the organization of memristive devices (or other resistive non-volatile memory (NVM)) into large, densely-packed crossbar arrays. While resistive-NVM devices frequently possess some degree of inherent nonlinearity (typically 3–30× contrast), the operation of large (> 1000×1000 device) arrays at low power tends to require quite large (> 1e7) ON-to-OFF ratios (between the currents passed at high and at low voltages). One path to such large nonlinearities is the inclusion of a distinct access device (AD) together with each of the state-bearing resistive-NVM elements. While such an AD need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device. Several candidate ADs have been proposed, but obtaining high performance without requiring single-crystal silicon and/or the high processing temperatures of the front-end-of-the-line—which would eliminate any opportunity for 3D stacking—has been difficult. We review our work at IBM Research—Almaden on high-performance ADs based on Cu-containing mixed-ionic-electronic conduction (MIEC) materials [1–7]. These devices require only the low processing temperatures of the back-end-of-the-line, making them highly suitable for implementing multi-layer cross-bar arrays. MIEC-based ADs offer large ON/OFF ratios (>1e7), a significant voltage margin V m (over which current <10 nA), and ultra-low leakage (< 10 pA), while also offering the high current densities needed for phase-change memory and the fully bipolar operation needed for high-performance RRAM. Scalability to critical lateral dimensions < 30 nm and thicknesses < 15 nm, tight distributions and 100% yield in large (512 kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50 ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based ADs shows that their operation depends on Cu + mediated hole conduction. Circuit

  10. MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

    Science.gov (United States)

    Shenoy, Rohit S.; Burr, Geoffrey W.; Virwani, Kumar; Jackson, Bryan; Padilla, Alvaro; Narayanan, Pritish; Rettner, Charles T.; Shelby, Robert M.; Bethune, Donald S.; Raman, Karthik V.; BrightSky, Matthew; Joseph, Eric; Rice, Philip M.; Topuria, Teya; Kellock, Andrew J.; Kurdi, Bülent; Gopalakrishnan, Kailash

    2014-10-01

    Several attractive applications call for the organization of memristive devices (or other resistive non-volatile memory (NVM)) into large, densely-packed crossbar arrays. While resistive-NVM devices frequently possess some degree of inherent nonlinearity (typically 3-30× contrast), the operation of large (\\gt 1000×1000 device) arrays at low power tends to require quite large (\\gt 1e7) ON-to-OFF ratios (between the currents passed at high and at low voltages). One path to such large nonlinearities is the inclusion of a distinct access device (AD) together with each of the state-bearing resistive-NVM elements. While such an AD need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device. Several candidate ADs have been proposed, but obtaining high performance without requiring single-crystal silicon and/or the high processing temperatures of the front-end-of-the-line—which would eliminate any opportunity for 3D stacking—has been difficult. We review our work at IBM Research—Almaden on high-performance ADs based on Cu-containing mixed-ionic-electronic conduction (MIEC) materials [1-7]. These devices require only the low processing temperatures of the back-end-of-the-line, making them highly suitable for implementing multi-layer cross-bar arrays. MIEC-based ADs offer large ON/OFF ratios (\\gt 1e7), a significant voltage margin {{V}m} (over which current \\lt 10 nA), and ultra-low leakage (\\lt 10 pA), while also offering the high current densities needed for phase-change memory and the fully bipolar operation needed for high-performance RRAM. Scalability to critical lateral dimensions \\lt 30 nm and thicknesses \\lt 15 nm, tight distributions and 100% yield in large (512 kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50 ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based ADs shows that their operation depends on C{{u}+} mediated hole

  11. Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate.

    Science.gov (United States)

    Lee, Woocheol; Jang, Jingon; Song, Younggul; Cho, Kyungjune; Yoo, Daekyoung; Kim, Youngrok; Chung, Seungjun; Lee, Takhee

    2017-03-01

    We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch ® Magic ™ tape as a flexible substrate. The memory devices consist of double active layers of Al 2 O 3 with a structure of Au/Al 2 O 3 /Au/Al 2 O 3 /Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 10 4 , endurance over 200 cycles of reading/writing processes, and retention times of over 10 4 s in both the flat and bent configurations.

  12. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

    Science.gov (United States)

    Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

    2018-01-01

    Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these

  13. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.

    Science.gov (United States)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-14

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  14. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  15. Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.

    Science.gov (United States)

    Zhang, Pengfei; Li, Dong; Chen, Mingyuan; Zong, Qijun; Shen, Jun; Wan, Dongyun; Zhu, Jingtao; Zhang, Zengxing

    2018-02-15

    To meet the increasing requirements of minimizing circuits, the development of novel device architectures that use ultra-thin two-dimensional materials is encouraged. Here, we demonstrate a non-volatile black phosphorus (BP) PNP junction in a BP/h-BN/graphene heterostructure in which BP acts as a transport channel layer, hexagonal boron nitride (h-BN) serves as a tunnel barrier layer and graphene is the charge-trapping layer. The device architecture is designed such that only the middle part of the BP is aligned over the graphene flake, enabling the flexible tuning of the charge carriers in the BP over the graphene charge-trapping layer. Thus, the device exhibits the ability to work in two different operating modes (PNP and PP + P). Each operating mode can be retained well and demonstrates non-volatile behavior, and each can be programmed by using the control-gate.

  16. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.

    Science.gov (United States)

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-21

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.

  17. Bipolar resistive switching based on bis(8-hydroxyquinoline) cadmium complex: Mechanism and non-volatile memory application

    International Nuclear Information System (INIS)

    Wang Ying; Yang Ting; Xie Ji-Peng; Lü Wen-Li; Fan Guo-Ying; Liu Su

    2013-01-01

    Stable and persistent bipolar resistive switching was observed in an organic diode with the structure of indium-tin oxide (ITO)/bis(8-hydroxyquinoline) cadmium (Cdq 2 )/Al. Aggregate formation and electric field driven trapping and de-trapping of charge carriers in the aggregate states that lie in the energy gap of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the organic molecule were proposed as the mechanism of the observed bipolar resistive switching, and this was solidly supported by the results of AFM investigations. Repeatedly set, read, and reset measurements demonstrated that the device is potentially applicable in non-volatile memories

  18. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  19. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  20. Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell.

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen

    2017-09-20

    We explore the use of cubic-zinc peroxide (ZnO 2 ) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO 2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO 2 layer provides a sufficient resistivity to the Cu/ZnO 2 /ZnO/ITO devices. The high resistivity of ZnO 2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10 4 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.

  1. Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories

    International Nuclear Information System (INIS)

    Hocevar, M.; Regreny, P.; Gendry, M.; Poncet, A.; Souifi, A.

    2008-01-01

    In this paper we present the electrical characterization of an InAs nanocrystal based metal-oxide-semiconductor structure. The fabricated device behaves as a memory since the charges injected in the InAs through the SiO 2 tunnel layer (holes or electrons) have a long retention time in or by the nanocrystals. A discharging model based on direct tunnelling through a dielectric barrier has been used in order to calculate electron discharging kinetics. The results show that InAs-nanocrystals are of real interest for electron storage in non-volatile memories with an improvement of data retention for electron. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  3. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  4. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  5. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    NARCIS (Netherlands)

    Gelinck, G.H.; Cobb, B.; Breemen, A.J.J.M. van; Myny, K.

    2015-01-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge,

  6. Effect of redox proteins on the behavior of non-volatile memory.

    Science.gov (United States)

    Lee, Ji Hyun; Yew, Seung Chul; Cho, Jinhan; Kim, Youn Sang

    2012-12-21

    We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).

  7. Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag2S nanoparticles

    International Nuclear Information System (INIS)

    Jang, Jaewon

    2016-01-01

    In this study, Ag 2 S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag 2 S films are successfully crystallized on plastic substrates with synthesized Ag 2 S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag 2 S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10 3 cycles and 10 4 sec, respectively.

  8. Fabrication of solution processed carbon nanotube embedded polyvinyl alcohol composite film for non-volatile memory device.

    Science.gov (United States)

    Kishore, S Chandra; Pandurangan, A

    2014-03-01

    Carbon nanotubes (CNTs) were synthesized by chemical vapor deposition using nickel coated stainless steel prepared by electrophoretic deposition. CNTs were embedded in polyvinyl alcohol (PVA) which acts as an organic insulator to fabricate Si/PVA/CNT/PVA/Al Metal-Insulator-Semiconductor type memory devices. The effect of CNT content in the charge storage capacity of PVA-CNT composite film was investigated. The hysteresis obtained from the capacitance-voltage (CV) measurement resulted in a memory window of 1.9 V with 3% CNT loading with the gate voltage sweep of +/- 6 V at 1 MHz under room temperature. The memory window of the devices was due to electron injection into the CNT charge storage elements from the top electrode through PVA. The extensive pi-conjugation along the CNT axis traps the electrons in the CNT network. The ON/OFF state current ratio of Si/Al/PVA-CNT/AI device with 3% CNT in PVA demonstrated significantly a lower turn-on voltage of -1 V and a higher ON/OFF state current ratio of 10(7). The non-volatile and reprogrammable switching behavior of the device demonstrated the characteristic of a rewritable memory.

  9. Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag{sub 2}S nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jaewon, E-mail: j1jang@knu.ac.kr [School of Electronics Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2016-07-15

    In this study, Ag{sub 2}S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag{sub 2}S films are successfully crystallized on plastic substrates with synthesized Ag{sub 2}S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag{sub 2}S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10{sup 3} cycles and 10{sup 4} sec, respectively.

  10. BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

    Energy Technology Data Exchange (ETDEWEB)

    Mudge, Trevor [Univ. of Michigan, Ann Arbor, MI (United States)

    2017-12-15

    This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in Exascale systems. Capacity and energy are the key drivers.

  11. Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles.

    Science.gov (United States)

    Gupta, Raju Kumar; Krishnamoorthy, Sivashankar; Kusuma, Damar Yoga; Lee, Pooi See; Srinivasan, M P

    2012-04-07

    We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal-insulator-semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 V. Aggregates of citrate stabilized gold nanoparticles were obtained by directed electrostatic self-assembly onto an underlying nanopattern of positively charged centers. The underlying nanopatterns consist of amine functionalized gold nanoparticle arrays formed using amphiphilic diblock copolymer reverse micelles as templates. The hierarchical self-organization leads to a twelve-fold increase in the number density of the gold nanoparticles and therefore significantly increases the charge storage centers for the MIS device. The MIS structure showed counterclockwise C-V hysteresis curves indicating a good memory effect. A memory window of 1 V was obtained at a low biasing voltage of ±4 V. Furthermore, C-t measurements conducted after applying a charging bias of 4 V showed that the charge was retained beyond 20,000 s. The proposed strategy can be readily adapted for fabricating next generation solution processible non-volatile memory devices. This journal is © The Royal Society of Chemistry 2012

  12. Non-Volatile Flash Memory Characteristics of Tetralayer Nickel-Germanide Nanocrystals Embedded Structure.

    Science.gov (United States)

    Panda, D; Panda, M

    2016-01-01

    Formation of tetralayer memory structure having nickel-germanide nanocrystals using a Ge/Ni multilayers is proposed. X-ray diffraction study shows the NiGe (002) phase formation after proper annealing. Cross sectional HRTEM clearly shows the sharpness and the size (~4-6 nm) of the stacked nanocrystals embedded in the oxide matrix. A large anti-clockwise hysteresis memory win- dow of 13.4 Volt at ± 15 Volt is observed for the optimized samples. This large memory window indicates for the MLC applications. Frequency independent C-V curve confirms about the charge storage in the nanocrystals. A good charge retention and endurance characteristics are exhibited upto 125 °C for the nonvolatile memory application.

  13. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes.

    Science.gov (United States)

    Muralidharan, Girish; Bhat, Navakanta; Santhanam, Venugopal

    2011-11-01

    We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

  14. Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

    NARCIS (Netherlands)

    Brunets, I.; Aarnink, Antonius A.I.; Boogaard, A.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

    Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool. The floating gate consists of silicon nanocrystals. A high nanocrystal density was obtained through an enhanced nucleation rate by using disilane (Si2H6) as well as trisilane (Si3H8, known as Silcore®)

  15. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  16. Biologically active nanocomposite of DNA-PbS nanoparticles: A new material for non-volatile memory devices

    Science.gov (United States)

    Murgunde, B. K.; Rabinal, M. K.; Kalasad, M. N.

    2018-01-01

    Composite films of deoxyribonucleic acid (DNA) and lead sulfide (PbS) nanoparticles are prepared to fabricate biological memory devices. A simple solution based electrografting is developed to deposit large (few cm2) uniform films of DNA:PbS on conducting substrates. The films are studied by X-ray photoelectron spectroscopy, field emission SEM, FTIR and optical spectroscopy to understand their properties. Charge transport measurements are carried out on ITO-DNA:PbS-metal junctions by cyclic voltage scans, electrical bi-stability is observed with ON/OFF ratio more than ∼104 times with good stability and endurance, such performance being rarely reported. The observed results are interpreted in the light of strong electrostatic binding of nanoparticles and DNA stands, which leads doping of Pb atoms into DNA. As a result, these devices exhibit negative differential resistance (NDR) effect due to oxidation of doped metal atoms. These composites can be the potential materials in the development of new generation non-volatile memory devices.

  17. Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices.

    Science.gov (United States)

    Jeon, Jaeho; Lee, Jinhee; Yoo, Gwangwe; Park, Jin-Hong; Yeom, Geun Young; Jang, Yun Hee; Lee, Sungjoo

    2016-09-29

    We report the CVD synthesis of a monolayer of MoS 2 nanoparticles such that the nanoparticle size was controlled over the range 5-100 nm and the chemical potential of sulfur was modified, both by controlling the hydrogen flow rate during the CVD process. As the hydrogen flow rate was increased, the reaction process of sulfur changed from a "sulfiding" process to a "sulfo-reductive" process, resulting in the growth of smaller MoS 2 nanoparticles on the substrates. The size control, crystalline quality, chemical configuration, and distribution uniformity of the CVD-grown monolayer MoS 2 nanoparticles were confirmed. The growth of the MoS 2 nanoparticles at different edge states was studied using density functional theory calculations to clarify the size-tunable mechanism. A non-volatile memory device fabricated using the CVD-grown size-controlled 5 nm monolayer MoS 2 nanoparticles as a floating gate showed a good memory window of 5-8 V and an excellent retention period of a decade.

  18. Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.

    Science.gov (United States)

    Lo, Chen-Tsyr; Watanabe, Yu; Oya, Hiroshi; Nakabayashi, Kazuhiro; Mori, Hideharu; Chen, Wen-Chang

    2016-06-07

    Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.

  19. Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices.

    Science.gov (United States)

    Maiti, Dilip K; Debnath, Sudipto; Nawaz, Sk Masum; Dey, Bapi; Dinda, Enakhi; Roy, Dipanwita; Ray, Sudipta; Mallik, Abhijit; Hussain, Syed A

    2017-10-17

    A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

  20. Resistance Switching in Complex Oxides: Improvements in Understanding and Function for Use as Non-Volatile Memory

    Science.gov (United States)

    Young, Kristina Garrison

    2011-12-01

    Pro0.7Ca0.3MnO3 (PCMO) is a complex oxide that is studied for use as a non-volatile memory with potential to replace flash-type memory. PCMO functions as a resistive random access memory (RRAM) whose memory function is due to an oxygen vacancy concentration change that occurs in the top interface of the PCMO during the application of an electric field. The concentration of the oxygen ions/vacancies in this top interface region significantly affects the resistance seen in a simple thin film device. The electric field required to move ions/vacancies within PCMO is generated by a short (ns), low voltage (few V) pulse. During the pulse a high current is seen that is not commensurate with the resistance seen after the removal of the pulse. Additionally, after the removal of the pulse there is a degradation of the resistance state set by the pulse. The high current seen during the pulse has been explored using electrical characterization techniques and is believed to be due to quantum mechanical tunneling through the high resistance interface region. Modeling of conduction values confirms that quantum mechanical tunneling is the source of the high current. The degradation of the state after the removal of the pulse has been improved through the nanostructure modification of the PCMO film. A thin (barrier layer was placed immediately below the interface of the PCMO minimizing the back diffusion of ions/vacancies after removal of the pulse. The modification improved the EPIR ratio, fatigue and retention in PCMO.

  1. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

    International Nuclear Information System (INIS)

    Liu, Jing; Wang, Qin; Long, Shibing; Zhang, Manhong; Liu, Ming

    2010-01-01

    In this paper, we report a metal/Al 2 O 3 /ZrO 2 /SiO 2 /Si (MAZOS) structure with a ZrO 2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al 2 O 3 /Si 3 N 4 /SiO 2 /Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under ±11 V capacitance–voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application

  2. A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory.

    Science.gov (United States)

    Fang, Huajing; Li, Qiang; He, Wenhui; Li, Jing; Xue, Qingtang; Xu, Chao; Zhang, Lijing; Ren, Tianling; Dong, Guifang; Chan, H L W; Dai, Jiyan; Yan, Qingfeng

    2015-11-07

    We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 10(3). More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

  3. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  4. The microstructure investigation of GeTi thin film used for non-volatile memory

    International Nuclear Information System (INIS)

    Shen Jie; Liu Bo; Song Zhitang; Xu Cheng; Liang Shuang; Feng Songlin; Chen Bomy

    2008-01-01

    GeTi thin film has been found to have the reversible resistance switching property in our previous work. In this paper, the microstructure of this material with a given composition was investigated. The film was synthesized by magnetron sputtering and treated by the rapid temperature process. The results indicate a coexist status of amorphous and polycrystalline states in the as-deposited GeTi film, and the grains in the film are extremely fine. Furthermore, not until the film annealed at 600 deg. C, can the polycrystalline state be detected by X-ray diffraction. Based on the morphological analysis, the sputtered GeTi has the column growth tendency, and the column structure vanishes with the temperature increasing. The microstructure and thermal property analysis indicate that GeTi does not undergo evident phase change process during the annealing process, which makes the switching mechanism of GeTi different from that of chalcogenide memory material, the most widely used phase change memory material

  5. Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

    International Nuclear Information System (INIS)

    Ramalingam, Balavinayagam; Zheng, Haisheng; Gangopadhyay, Shubhra

    2014-01-01

    In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al 2 O 3 tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al 2 O 3 initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al 2 O 3 layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging

  6. Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

    Science.gov (United States)

    Yadav, Manoj; Velampati, Ravi Shankar R.; Mandal, D.; Sharma, Rohit

    2018-03-01

    Colloidal synthesis and size control of nickel (Ni) nanocrystals (NCs) below 10 nm are reported using a microwave synthesis method. The synthesised colloidal NCs have been characterized using x-ray diffraction, transmission electron microscopy (TEM) and dynamic light scattering (DLS). XRD analysis highlights the face centred cubic crystal structure of synthesised NCs. The size of NCs observed using TEM and DLS have a distribution between 2.6 nm and 10 nm. Furthermore, atomic force microscopy analysis of spin-coated NCs over a silicon dioxide surface has been carried out to identify an optimum spin condition that can be used for the fabrication of a metal oxide semiconductor (MOS) non-volatile memory (NVM) capacitor. Subsequently, the fabrication of a MOS NVM capacitor is reported to demonstrate the potential application of colloidal synthesized Ni NCs in NVM devices. We also report the capacitance-voltage (C-V) and capacitance-time (C-t) response of the fabricated MOS NVM capacitor. The C-V and C-t characteristics depict a large flat band voltage shift (V FB) and high retention time, respectively, which indicate that colloidal Ni NCs are excellent candidates for applications in next-generation NVM devices.

  7. Investigation on the Charge Loss Mechanisms of Nanoscale Charge Trap Non-Volatile Memory by Using Stretched Exponential Function.

    Science.gov (United States)

    Lee, Meng Chuan; Wong, Hin Yong

    2016-01-01

    Charge loss mechanisms of nanoscale charge trap non-volatile memory devices are carefully examined and studied. Fowler-Nordheim tunnelling mechanism is used to perform rapid program/erase cycling. Based on the good fit of post cycled and baked threshold voltage data to Stretched Exponential function, the lowest point and the peak of Vt distribution were found to evolve in a similar manner that resulted to similar derived Ea. The saturation behaviour of the threshold voltage decay can be predicted and validated through cells' threshold voltage measurements that fit well to Stretched Exponential function. The power law relationship of program/erase cycle count and the saturation behaviour was found to be similar on the device under study and NROM devices that utilizes significant different charge injection mechanisms for program/erase operation. The experimental results also demonstrated that charge injection mechanism is one of the dominant factors in determining the underlying charge loss mechanism. Moreover, the determination of charge loss mechanism depends on the total charges injected through the tunnel oxide layer of ONO stack in NB-CTNVM cell. Physical interpretation of the experimental findings of the dominant charge loss mechanism is deliberated in detail.

  8. Exploring the Future of Out-of-Core Computing with Compute-Local Non-Volatile Memory

    Directory of Open Access Journals (Sweden)

    Myoungsoo Jung

    2014-01-01

    Full Text Available Drawing parallels to the rise of general purpose graphical processing units (GPGPUs as accelerators for specific high-performance computing (HPC workloads, there is a rise in the use of non-volatile memory (NVM as accelerators for I/O-intensive scientific applications. However, existing works have explored use of NVM within dedicated I/O nodes, which are distant from the compute nodes that actually need such acceleration. As NVM bandwidth begins to out-pace point-to-point network capacity, we argue for the need to break from the archetype of completely separated storage. Therefore, in this work we investigate co-location of NVM and compute by varying I/O interfaces, file systems, types of NVM, and both current and future SSD architectures, uncovering numerous bottlenecks implicit in these various levels in the I/O stack. We present novel hardware and software solutions, including the new Unified File System (UFS, to enable fuller utilization of the new compute-local NVM storage. Our experimental evaluation, which employs a real-world Out-of-Core (OoC HPC application, demonstrates throughput increases in excess of an order of magnitude over current approaches.

  9. The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices.

    Science.gov (United States)

    Lee, Meng Chuan; Wong, Hin Yong

    2014-02-01

    This paper is written to review the development of critical research on the overall impact of tunnel oxide nitridation (TON) with the aim to mitigate reliability issues due to incessant technology scaling of charge storage NVM devices. For more than 30 years, charge storage non-volatile memory (NVM) has been critical in the evolution of intelligent electronic devices and continuous development of integrated technologies. Technology scaling is the primary strategy implemented throughout the semiconductor industry to increase NVM density and drive down average cost per bit. In this paper, critical reliability challenges and key innovative technical mitigation methods are reviewed. TON is one of the major candidates to replace conventional oxide layer for its superior quality and reliability performance. Major advantages and caveats of key TON process techniques are discussed. The impact of TON on quality and reliability performance of charge storage NVM devices is carefully reviewed with emphasis on major advantages and drawbacks of top and bottom nitridation. Physical mechanisms attributed to charge retention and V(t) instability phenomenon are also reviewed in this paper.

  10. Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

    International Nuclear Information System (INIS)

    Lin, C W; Yang, Y J; Wang, D Y; Jiang, Y T; Chen, C C; Tai, Y; Chen, M C; Chen, Y F

    2011-01-01

    Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS 2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS 2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS 2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS 2 /P3HT offers a type-II band alignment. (fast track communication)

  11. Germanium sulfide-based solid electrolytes for non-volatile memory

    Science.gov (United States)

    Balakrishnan, Muralikrishnan

    Programmable Metallization Cell (PMC) technology involves the storage of data as reduced metal ions in a solid electrolyte. Earlier work on Selenide-based (Ag-Ge-Se) PMC devices requires relatively low back-end-of-line processing (BEOL) since the electrolyte may undergo undesirable changes at process temperatures in excess of 200°C. This dissertation is focused on Sulfide-based (Ag/Cu-Ge-S) solid electrolytes which have better temperature stability and the PMC technology based on these materials is compatible with most BEOL process in CMOS Integrated Circuits. The devices fabricated using Ag-Ge-S and Cu-Ge-S solid electrolytes were tested after annealing at 300°C and 430°C. Extensive material analysis was performed on both the systems in an effort to understand the behavior of the devices at elevated temperatures. Electrical characterization testing involved standard memory characterization techniques such as quasi-static measurements tests, retention tests, speed tests, elevated temperature operation tests and endurance tests. The Ag-Ge-S PMC devices were made with different compositions to find out the optimum composition which would ensure reliable operation even after the high temperature anneal. The Sulfide-based PMC devices were also tested for reconfigurable logic applications with special test structures that would demonstrate the low resistance connections that can be achieved by programming the PMC elements using higher currents. Optimum composition of the starting glass was found from the material and data analysis, to ensure reliable operation of the Sulfide-based PMC devices with no degradation in the electrical characteristics even after the typical BEOL anneal.

  12. Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90 nm Localized Charge-Trapping Non-volatile Memory

    International Nuclear Information System (INIS)

    Yue, Xu; Feng, Yan; Dun-Jun, Chen; Yi, Shi; Yong-Gang, Wang; Zhi-Guo, Li; Fan, Yang; Jos-Hua, Wang; Peter, Lin; Jian-Guang, Chang

    2010-01-01

    As the scaling-down of non-volatile memory (NVM) cells continues, the impact of shallow trench isolation (STI) on NVM cells becomes more severe. It has been observed in the 90 nm localized charge-trapping non-volatile memory (NROM™) that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10° tilt at the active area edge as a new solution to solve this problem is developed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2015-07-21

    Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

  14. In search of the next memory inside the circuitry from the oldest to the emerging non-volatile memories

    CERN Document Server

    Campardo, Giovanni

    2017-01-01

    This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the...

  15. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  16. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Kim, W. S. [Doowon Technical College, Kyonggi (Korea, Republic of); Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y. [Dongguk University, Seoul (Korea, Republic of)

    2010-08-15

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift ({Delta}V{sub FB}) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  17. Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM.

    Science.gov (United States)

    Chen, Chih-Jung; Wu, Jia-Hao; Liou, Guey-Sheng

    2014-04-28

    High ON/OFF ratio electrically bistable non-volatile WORM memory devices were prepared based on poly(triphenylamine) with different amounts of pendent PCBM. With the introduction of 10 wt% PCBM into P-TPA via covalent bonding, a memory device with low switching-ON voltage (0.9 V) and high ON/OFF ratio (10(9)) could be obtained. The device performance remained satisfactory under the heating condition up to 100 °C which is beneficial to maintain device stability for computer application when other components produce heat.

  18. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory.

    Science.gov (United States)

    Ahmad, Hasnain; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-12-14

    We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile "non-toggle" memory.

  19. High-temperature operating non-volatile memory of printable single-wall carbon nanotubes self-assembled with a conjugate block copolymer.

    Science.gov (United States)

    Hwang, Sun Kak; Choi, Jae Ryung; Bae, Insung; Hwang, Ihn; Cho, Suk Man; Huh, June; Park, Cheolmin

    2013-03-25

    Printable non-volatile polymer memories are fabricated with solution-processed nanocomposite films of poly(styrene-block-paraphenylene) (PS-b-PPP) and single-wall carbon nanotubes (SWNTs). The devices show stable data retention at high temperatures of up to 100 °C without significant performance degradation due to the strong, non-destructive, and isomorphic π-π interactions between the SWNTs and PPP block. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

    Science.gov (United States)

    Gubicza, Agnes; Csontos, Miklós; Halbritter, András; Mihály, György

    2015-03-14

    The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

  1. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.

    Science.gov (United States)

    Leydecker, Tim; Herder, Martin; Pavlica, Egon; Bratina, Gvido; Hecht, Stefan; Orgiu, Emanuele; Samorì, Paolo

    2016-09-01

    Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

  2. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

    Science.gov (United States)

    Leydecker, Tim; Herder, Martin; Pavlica, Egon; Bratina, Gvido; Hecht, Stefan; Orgiu, Emanuele; Samorì, Paolo

    2016-09-01

    Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

  3. 5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers

    Science.gov (United States)

    Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

    2015-10-01

    Organic non-volatile memory devices were fabricated by employing organic field-effect transistors (OFETs) with poly(vinyl alcohol) (PVA) and poly(3-hexylthiophene) as a gate insulating layer and a channel layer, respectively. The 10-nm-thick nickel layers were inserted for better charge injection between the channel layer and the top source/drain electrodes. The fabricated PVA-OFET memory devices could be operated at low voltages (≤5 V) and showed pronounced hysteresis characteristics in the transfer curves, even though very small hysteresis was measured from the output curves. The degree of hysteresis was considerably dependent on the ratio of channel width (W) to channel length (L). The PVA-OFET memory device with the smaller W/L ratio (25) exhibited better retention characteristics upon 700 cycles of writing-reading-erasing-reading operations, which was assigned to the stability of charged states in devices.

  4. Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

    International Nuclear Information System (INIS)

    Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Roy, Asim; Prajapat, Manoj

    2017-01-01

    Molybdenum disulfide (MoS 2 ) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS 2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS 2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3  ×  10 3 , 10 5 s and 10 5 cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS 2 . The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device. (paper)

  5. Titanium-tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory

    International Nuclear Information System (INIS)

    Yang Shiqian; Wang Qin; Zhang Manhong; Long Shibing; Liu Jing; Liu Ming

    2010-01-01

    Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti 0.46 W 0.54 NCs were embedded in the gate dielectric stack of SiO 2 /Al 2 O 3 . A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V FB ) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V FB shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10 4 s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

  6. Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

    International Nuclear Information System (INIS)

    Jung, Sungwook; Hwang, Sunghyun; Kim, Kyunghae; Dhungel, S.K.; Chung, Ho-Kyoon; Choi, Byoung-Deog; Lee, Ki-Yong; Yi, J.

    2007-01-01

    In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that the ultra-thin oxynitride layers of 2 nm thickness formed by only nitrous oxide plasma have good properties as tunneling layer for non-volatile memory device

  7. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    International Nuclear Information System (INIS)

    Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

    2015-01-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

  8. Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition

    Science.gov (United States)

    Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang

    2016-11-01

    In this paper we report In2O3/CdSe quantum dot based non-volatile resistive memory device with ON/OFF ratio ∼1000. Indium nanostructures were grown by oblique angle deposition technique in a thermal evaporator. Indium oxide nanostructures had size ranging from 20 nm to 100 nm as observed from TEM and AFM methods. The facile device fabricated with a layer of CdSe quantum dot on indium oxide film exhibited excellent endurance characteristics over 100,000 switching cycles. Retention tests showed good stability for over 4000 s. Memory operating mechanism is proposed based on charge trapping/de-trapping in quantum dots with indium oxide acting as barrier leading to Coulomb blockade. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state.

  9. DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization.

    Science.gov (United States)

    Song, Youngjun; Kim, Sejung; Heller, Michael J; Huang, Xiaohua

    2018-01-18

    DNA has been employed to either store digital information or to perform parallel molecular computing. Relatively unexplored is the ability to combine DNA-based memory and logical operations in a single platform. Here, we show a DNA tri-level cell non-volatile memory system capable of parallel random-access writing of memory and bit shifting operations. A microchip with an array of individually addressable electrodes was employed to enable random access of the memory cells using electric fields. Three segments on a DNA template molecule were used to encode three data bits. Rapid writing of data bits was enabled by electric field-induced hybridization of fluorescently labeled complementary probes and the data bits were read by fluorescence imaging. We demonstrated the rapid parallel writing and reading of 8 (2 3 ) combinations of 3-bit memory data and bit shifting operations by electric field-induced strand displacement. Our system may find potential applications in DNA-based memory and computations.

  10. A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices

    Science.gov (United States)

    Alotaibi, Sattam; Nama Manjunatha, Krishna; Paul, Shashi

    2017-12-01

    Flexible Semi-Transparent electronic memory would be useful in coming years for integrated flexible transparent electronic devices. However, attaining such flexibility and semi-transparency leads to the boundaries in material composition. Thus, impeding processing speed and device performance. In this work, we present the use of inorganic stable selenium nanoparticles (Se-NPs) as a storage element and hydrogenated amorphous carbon (a-C:H) as an insulating layer in two terminal non-volatile physically flexible and semi-transparent capacitive memory devices (2T-NMDs). Furthermore, a-C:H films can be deposited at very low temperature (memory on a flexible substrate. Moreover, the memory behaviour of the Se-NPs was found to be more distinct than those of the semiconductor and metal nanostructures due to higher work function compared to the commonly used semiconductor and metal species. The memory behaviour was observed from the hysteresis of current-voltage (I-V) measurements while the two distinguishable electrical conductivity states (;0; and "1") were studied by current-time (I-t) measurements.

  11. Laser Nanosoldering of Golden and Magnetite Particles and its Possible Application in 3D Printing Devices and Four-Valued Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Jaworski Jacek

    2015-12-01

    Full Text Available In recent years the 3D printing methods have been developing rapidly. This article presents researches about a new composite consisted of golden and magnetite nanoparticles which could be used for this technique. Preparation of golden nanoparticles by laser ablation and their soldering by laser green light irradiation proceeded in water environment. Magnetite was obtained on chemical way. During experiments it was tested a change of a size of nanoparticles during laser irradiation, surface plasmon resonance, zeta potential. The obtained golden - magnetite composite material was magnetic after laser irradiation. On the end there was considered the application it for 3D printing devices, water filters and four-valued non-volatile memories.

  12. Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.

    Science.gov (United States)

    Wei, Yanping; Gao, Cunxu; Chen, Zhendong; Xi, Shibo; Shao, Weixia; Zhang, Peng; Chen, Guilin; Li, Jiangong

    2016-07-15

    We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

  13. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Qin; Zhang, Manhong; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Yang, Jianhong; Liu, Ming

    2010-01-01

    In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (ROFF/RON>107). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.

  14. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Energy Technology Data Exchange (ETDEWEB)

    Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Beigne, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  15. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Science.gov (United States)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-05-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  16. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    International Nuclear Information System (INIS)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-01-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes

  17. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  18. Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory.

    Science.gov (United States)

    Yang, Shiqian; Wang, Qin; Zhang, Manhong; Long, Shibing; Liu, Jing; Liu, Ming

    2010-06-18

    Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti(0.46)W(0.54) NCs were embedded in the gate dielectric stack of SiO(2)/Al(2)O(3). A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V(FB)) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V(FB) shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10(4) s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

  19. A supramolecular approach on using poly(fluorenylstyrene)-block-poly(2-vinylpyridine):PCBM composite thin films for non-volatile memory device applications.

    Science.gov (United States)

    Hsu, Jung-Ching; Liu, Cheng-Liang; Chen, Wen-Chang; Sugiyama, Kenji; Hirao, Akira

    2011-03-16

    Supramolecular composite thin films of poly[4-(9,9-dihexylfloren-2-yl)styrene]-block-poly(2-vinylpyridine) (P(St-Fl)-b-P2VP):[6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) were prepared for write-once-read-many times (WORM) non-volatile memory devices. The optical absorption and photoluminescence results indicated the formation of charge transfer complexation between the P2VP block and PCBM, which led to the varied PCBM aggregated size and memory characteristics. The ITO/PCBM:(P(St-Fl)-b-P2VP)/Al device exhibited the WORM characteristic with low threshold voltage (-1.6 to -3.2 V) and high ON/OFF ratio (10(3) to 10(5)) by tuning the PCBM content. The switching behavior could be explained by the charge injection dominated thermionic emission in the OFF state and field-induced charge transfer in the ON state. The present study provides a novel approach system for tuning polymer memory device characteristics through the supramolecular materials approach. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    Science.gov (United States)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-02-16

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  1. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  2. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  3. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    Science.gov (United States)

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  4. An overview of Experimental Condensed Matter Physics in Argentina by 2014, and Oxides for Non Volatile Memory Devices: The MeMOSat Project

    Science.gov (United States)

    Levy, Pablo

    2015-03-01

    In the first part of my talk, I will describe the status of the experimental research in Condensed Matter Physics in Argentina, biased towards developments related to micro and nanotechnology. In the second part, I will describe the MeMOSat Project, a consortium aimed at producing non-volatile memory devices to work in aggressive environments, like those found in the aerospace and nuclear industries. Our devices rely on the Resistive Switching mechanism, which produces a permanent but reversible change in the electrical resistance across a metal-insulator-metal structure by means of a pulsed protocol of electrical stimuli. Our project is devoted to the study of Memory Mechanisms in Oxides (MeMO) in order to establish a technological platform that tests the Resistive RAM (ReRAM) technology for aerospace applications. A review of MeMOSat's activities is presented, covering the initial Proof of Concept in ceramic millimeter sized samples; the study of different oxide-metal couples including (LaPr)2/3Ca1/3MnO, La2/3Ca1/3MnO3, YBa2Cu3O7, TiO2, HfO2, MgO and CuO; and recent miniaturized arrays of micrometer sized devices controlled by in-house designed electronics, which were launched with the BugSat01 satellite in June2014 by the argentinian company Satellogic.

  5. HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories

    International Nuclear Information System (INIS)

    Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.

    2008-01-01

    The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap depths/levels) of the hafnium silicate layers, deposited from a single-source precursor, are deduced from capacitance-voltage and current density-voltage measurements. The oxide trap density of the analyzed HfSiO layers can be tuned to exceed that of silicon nitride. At the same time, a significant reduction of the write voltage is achieved due to a reduced effective oxide thickness. The erase operation, however, is hampered by the lower electric field at the HfSiO layer due to its high dielectric constant. Measurements also indicate that HfSiO exposed to a higher thermal budget during device fabrication results in fewer trapping centers. Retention measurements show that information can be reliably stored in memory cells with a trapping layer of HfSiO for more than 10 years similar to their silicon nitride counterparts. But the thickness of the top and bottom oxides must be increased for compensation of additional charge losses which are due to lower trap depth and free electron mass in HfSiO

  6. Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles.

    Science.gov (United States)

    Wang, Xue-Peng; Chen, Nian-Ke; Li, Xian-Bin; Cheng, Yan; Liu, X Q; Xia, Meng-Jiao; Song, Z T; Han, X D; Zhang, S B; Sun, Hong-Bo

    2014-06-14

    The nano amorphous interface is important as it controls the phase transition for data storage. Yet, atomic scale insights into such kinds of systems are still rare. By first-principles calculations, we obtain the atomic interface between amorphous Si and amorphous Sb2Te3, which prevails in the series of Si-Sb-Te phase change materials. This interface model reproduces the experiment-consistent phenomena, i.e. the amorphous stability of Sb2Te3, which defines the data retention in phase change memory, and is greatly enhanced by the nano interface. More importantly, this method offers a direct platform to explore the intrinsic mechanism to understand the material function: (1) by steric effects through the atomic "channel" of the amorphous interface, the arrangement of the Te network is significantly distorted and is separated from the p-orbital bond angle in the conventional phase-change material; and (2) through the electronic "channel" of the amorphous interface, high localized electrons in the form of a lone pair are "projected" to Sb2Te3 from amorphous Si by a proximity effect. These factors set an effective barrier for crystallization and improve the amorphous stability, and thus data retention. The present research and scheme sheds new light on the engineering and manipulation of other key amorphous interfaces, such as Si3N4/Ge2Sb2Te5 and C/Sb2Te3, through first-principles calculations towards non-volatile phase change memory.

  7. A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

    Science.gov (United States)

    Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

  8. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  9. Ordered arrays of a defect-modified ferroelectric polymer for non-volatile memory with minimized energy consumption.

    Science.gov (United States)

    Chen, Xiang-Zhong; Chen, Xin; Guo, Xu; Cui, Yu-Shuang; Shen, Qun-Dong; Ge, Hai-Xiong

    2014-11-21

    Ferroelectric polymers are among the most promising materials for flexible electronic devices. Highly ordered arrays of the defect-modified ferroelectric polymer P(VDF-TrFE-CFE) (poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)) are fabricated by nanoimprint lithography for nonvolatile memory application. The defective CFE units reduce the coercive field to one-fifth of that of the un-modified P(VDF-TrFE), which can help minimize the energy consumption and extend the lifespan of the device. The nanoimprint process leads to preferable orientation of polymer chains and delicately controlled distribution of the defects, and thus a bi-stable polarization that makes the memory nonvolatile, as revealed by the pulsed polarization experiment.

  10. A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non-volatile memory devices.

    Science.gov (United States)

    Park, Jinjoo; Lee, Seunghyup; Lee, Junghan; Yong, Kijung

    2013-11-26

    A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  12. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

    Directory of Open Access Journals (Sweden)

    Yu-Hua Liu

    2017-11-01

    Full Text Available Gold-nanoparticle (Au-NP non-volatile memories (NVMs with low-damage CF4 plasma treatment on the blocking oxide (BO layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS, while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS. In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs and the tunneling oxide (TO layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  13. Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer.

    Science.gov (United States)

    Liu, Yu-Hua; Kao, Chyuan-Haur; Cheng, Tsung-Chin; Wu, Chih-I; Wang, Jer-Chyi

    2017-11-10

    Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si-F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF₄ plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 10⁴ s and a nearly negligible increase in charge loss at 85 °C of the CF₄-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

  14. Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory

    International Nuclear Information System (INIS)

    Congedo, Gabriele; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina

    2013-01-01

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO 2 as tunnel oxide, Al–HfO 2 as charge trapping layer, SiO 2 as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N 2 , as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si 3 N 4 as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO 2 storage layer is fabricated and characterized. ► Al–HfO 2 and SiO 2 blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories

  15. Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

    Science.gov (United States)

    Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-08-01

    Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 105 s) and promising great read durability (106 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices.

  16. Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

    International Nuclear Information System (INIS)

    Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-01-01

    Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 10 5 s) and promising great read durability (10 6 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices. (paper)

  17. Different importance of the volatile and non-volatile fractions of an olfactory signature for individual social recognition in rats versus mice and short-term versus long-term memory.

    Science.gov (United States)

    Noack, Julia; Richter, Karin; Laube, Gregor; Haghgoo, Hojjat Allah; Veh, Rüdiger W; Engelmann, Mario

    2010-11-01

    When tested in the olfactory cued social recognition/discrimination test, rats and mice differ in their retention of a recognition memory for a previously encountered conspecific juvenile: Rats are able to recognize a given juvenile for approximately 45 min only whereas mice show not only short-term, but also long-term recognition memory (≥ 24 h). Here we modified the social recognition/social discrimination procedure to investigate the neurobiological mechanism(s) underlying the species differences. We presented a conspecific juvenile repeatedly to the experimental subjects and monitored the investigation duration as a measure for recognition. Presentation of only the volatile fraction of the juvenile olfactory signature was sufficient for both short- and long-term recognition in mice but not rats. Applying additional volatile, mono-molecular odours to the "to be recognized" juveniles failed to affect short-term memory in both species, but interfered with long-term recognition in mice. Finally immunocytochemical analysis of c-Fos as a marker for cellular activation, revealed that juvenile exposure stimulated areas involved in the processing of olfactory signals in both the main and the accessory olfactory bulb in mice. In rats, we measured an increased c-Fos synthesis almost exclusively in cells of the accessory olfactory bulb. Our data suggest that the species difference in the retention of social recognition memory is based on differences in the processing of the volatile versus non-volatile fraction of the individuals' olfactory signature. The non-volatile fraction is sufficient for retaining a short-term social memory only. Long-term social memory - as observed in mice - requires a processing of both the volatile and non-volatile fractions of the olfactory signature. Copyright © 2010 Elsevier Inc. All rights reserved.

  18. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide.

    Science.gov (United States)

    El-Atab, Nazek; Turgut, Berk Berkan; Okyay, Ali K; Nayfeh, Munir; Nayfeh, Ammar

    2015-12-01

    In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics.

  19. Optical quantum memory based on electromagnetically induced transparency.

    Science.gov (United States)

    Ma, Lijun; Slattery, Oliver; Tang, Xiao

    2017-04-01

    Electromagnetically induced transparency (EIT) is a promising approach to implement quantum memory in quantum communication and quantum computing applications. In this paper, following a brief overview of the main approaches to quantum memory, we provide details of the physical principle and theory of quantum memory based specifically on EIT. We discuss the key technologies for implementing quantum memory based on EIT and review important milestones, from the first experimental demonstration to current applications in quantum information systems.

  20. Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

    International Nuclear Information System (INIS)

    Mroczyński, Robert; Taube, Andrzej; Gierałtowska, Sylwia; Guziewicz, Elżbieta; Godlewski, Marek

    2012-01-01

    The feasibility of the application of double-gate dielectric stacks with fabricated by atomic layer deposited (ALD) HfO 2 and Al 2 O 3 layers in non-volatile semiconductor memory (NVSM) devices was investigated. Significant improvement in retention at elevated temperatures after the application of ALD high-k oxides was demonstrated. Superior memory window (extrapolated at 10 years) of flat-band voltage (U fb ) value of the order of 2.6 V and 4.55 V at 85 °C, for stack with HfO 2 and Al 2 O 3 , respectively, was obtained. Moreover, the analysis of conduction mechanisms in the investigated stacks under negative voltage revealed F-N tunneling in the range of high values of electric field intensity and lowering of barrier height with increasing temperature.

  1. Spirocyclic aromatic hydrocarbon-based organic nanosheets for eco-friendly aqueous processed thin-film non-volatile memory devices.

    Science.gov (United States)

    Lin, Zong-Qiong; Liang, Jin; Sun, Peng-Ju; Liu, Feng; Tay, Yee-Yan; Yi, Ming-Dong; Peng, Kun; Xia, Xian-Hai; Xie, Ling-Hai; Zhou, Xin-Hui; Zhao, Jian-Feng; Huang, Wei

    2013-07-19

    Supramolecular steric hindrance designs make pyrene-functionalized spiro[fluorene-9,7'-dibenzo[c,h]acridine]-5'-one (Py-SFDBAO) assemble into 2D nanostructures that facilitate aqueous phase large-area synthesis of high-quality and uniform crystalline thin films. Thin-film diodes using aqueous nanosheets as active layers exhibit a non-volatile bistable electrical switching feature with ON/OFF ratios of 6.0 × 10(4) and photoswitching with conductive gains of 10(2) -10(3). Organic nanosheets are potentially key components for eco-friendly aqueous dispersed organic nano-inks in the application of printed and flexible electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

    International Nuclear Information System (INIS)

    Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

    2013-01-01

    This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

  3. Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices.

    Science.gov (United States)

    Chang, Hsuan-Chun; Lu, Chien; Liu, Cheng-Liang; Chen, Wen-Chang

    2015-01-07

    Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    Science.gov (United States)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  5. Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-03-01

    In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O2-free SiCN film. Replacing the AZO top electrode with ITO in this device results in good resistive switching (RS) characteristics with a high on/off ratio and long retention. Replacing the SiCN film with ZrO2 also results in excellent RS characteristics due to the formation of an oxygen vacancies filament inside the ZrO2 film. A resistance ratio of on/off is found to be higher in the SiCN based device compared to that of the ZrO2 device. Diffusion of In from ITO into the SiCN film on application of high positive voltage during forming can be attributed to the occurrence of RS in the device, which is confirmed by the analyses of energy dispersive spectroscopy and secondary-ion mass spectrometry. This study shows a pathway for the fabrication of CBRAM based transparent devices for non-volatile memory application.

  6. A Fully Transparent Resistive Memory for Harsh Environments

    KAUST Repository

    Yang, Po-Kang

    2015-10-12

    A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

  7. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    Science.gov (United States)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  8. Effect of Mechanical Loads on Stability of Nanodomains in Ferroelectric Ultrathin Films: Towards Flexible Erasing of the Non-Volatile Memories

    OpenAIRE

    Chen, W. J.; Zheng, Yue; Xiong, W. M.; Feng, Xue; Wang, Biao; Wang, Ying

    2014-01-01

    Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechanisms of non-electrical processing ferroelectric domains are relatively lacking. Here we make a systematical investigation on the stability of 180° cylindrical domains in ferroelectric nanofilms subj...

  9. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

    Science.gov (United States)

    Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H; Seo, Sunae; Chung, U-In; Yoo, In-Kyeong; Kim, Kinam

    2011-07-10

    Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

  10. Effect of mechanical loads on stability of nanodomains in ferroelectric ultrathin films: towards flexible erasing of the non-volatile memories.

    Science.gov (United States)

    Chen, W J; Zheng, Yue; Xiong, W M; Feng, Xue; Wang, Biao; Wang, Ying

    2014-06-18

    Intensive investigations have been drawn on nanoscale ferroelectrics for their prospective applications such as developing memory devices. In contrast with the commonly used electrical means to process (i.e., read, write or erase) the information carried by ferroelectric domains, at present, mechanisms of non-electrical processing ferroelectric domains are relatively lacking. Here we make a systematical investigation on the stability of 180° cylindrical domains in ferroelectric nanofilms subjected to macroscopic mechanical loads, and explore the possibility of mechanical erasing. Effects of domain size, film thickness, temperature and different mechanical loads, including uniform strain, cylindrical bending and wavy bending, have been revealed. It is found that the stability of a cylindrical domain depends on its radius, temperature and film thickness. More importantly, mechanical loads have great controllability on the stability of cylindrical domains, with the critical radius nonlinearly sensitive to both strain and strain gradient. This indicates that erasing cylindrical domain can be achieved by changing the strain state of nanofilm. Based on the calculated phase diagrams, we successfully simulate several mechanical erasing processes on 4 × 4 bits memory devices. Our study sheds light on prospective device applications of ferroelectrics involving mechanical loads, such as flexible memory devices and other micro-electromechanical systems.

  11. Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

    International Nuclear Information System (INIS)

    Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2013-01-01

    We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle

  12. Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

    Science.gov (United States)

    Kim, Seung-Tae; Cho, Won-Ju

    2018-01-01

    We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

  13. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-23

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  14. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

    Science.gov (United States)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-01

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  15. Phase change materials in non-volatile storage

    OpenAIRE

    Ielmini, Daniele; Lacaita, Andrea L.

    2011-01-01

    After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

  16. An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, P.C. [Mechanical Engineering, The University of Auckland (New Zealand); Aw, K.C., E-mail: k.aw@auckland.ac.nz [Mechanical Engineering, The University of Auckland (New Zealand); Gao, W. [Chemical and Materials Engineering, The University of Auckland (New Zealand); Razak, K.A. [School of Materials and Mineral Resources Engineering, Universiti Sains (Malaysia); NanoBiotechnology Research and Innovation, INFORMM, Universiti Sains (Malaysia)

    2013-10-01

    In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium–tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I–V) plot of the transparent and flexible device shows the presence of hysteresis. In an I–V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress. - Highlights: ► An optically transparent and mechanically flexible memory is presented. ► Electrical characteristics show reprogrammable memory similar to flash memory. ► Transport mechanisms are proposed and explained. ► Mechanical bending tests are conducted.

  17. An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric

    International Nuclear Information System (INIS)

    Ooi, P.C.; Aw, K.C.; Gao, W.; Razak, K.A.

    2013-01-01

    In this work, we demonstrated a simple fabrication route towards an optically transparent and flexible memory device. The device is simple and consists of a metal/insulator/semiconductor structure; namely MIS. The preliminary MIS study with gold nanoparticles embedded between the polymethylsilsesquioxane layers was fabricated on p-Si substrate and the capacitance versus voltage measurements confirmed the charge trapped capability of the fabricated MIS memory device. Subsequently, an optically transparent and flexible MIS memory device made from indium–tin-oxide coated polyethylene terephthalate substrate and pentacene was used to replace the opaque p-Si substrate as the active layer. Current versus voltage (I–V) plot of the transparent and flexible device shows the presence of hysteresis. In an I–V plot, three distinct regions have been identified and the transport mechanisms are explained. The fabricated optically transparent and mechanically flexible MIS memory device can be programmed and erased multiple times, similar to a flash memory. Mechanical characterization to determine the robustness of the flexible memory device was also conducted but failed to establish any relationship in this preliminary work as the effect was random. Hence, more work is needed to understand the reliability of this device, especially when they are subjected to mechanical stress. - Highlights: ► An optically transparent and mechanically flexible memory is presented. ► Electrical characteristics show reprogrammable memory similar to flash memory. ► Transport mechanisms are proposed and explained. ► Mechanical bending tests are conducted

  18. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    2016-01-01

    This article challenges the view of transparency as a matter of providing openness, insight, and clarity by conceptualizing it as a form of visibility management. We tend to think of transparency as a process of ensuring accountability through the timely and public disclosure of information...... articulates the complexities and dynamics of visibility management and highlights a set of critical questions about the politics, technologies, and power effects of contemporary transparency regimes....

  19. Modeling the transparent shape memory gels by 3D printer Acculas

    Science.gov (United States)

    Kumagai, Hiroaki; Arai, Masanori; Gong, Jin; Sakai, Kazuyuki; Kawakami, Masaru; Furukawa, Hidemitsu

    2016-04-01

    In our group, highly transparent shape memory gels were successfully synthesized for the first time in the world. These gels have the high strength of 3MPs modulus even with the water content of 40wt% water and high transparency. We consider that these highly transparent and high strength gels can be applied to the optical devices such as intraocular-lenses and optical fibers. In previous research by our group, attempts were made to manufacture the gel intraocular-lenses using highly transparent shape memory gels. However, it was too difficult to print the intraocular-lens finely enough. Here, we focus on a 3D printer, which can produce objects of irregular shape. 3D printers generally we fused deposition modeling (FDM), a stereo lithography apparatus (SLA) and selective laser sintering (SLS). Because highly transparent shape memory gels are gelled by light irradiation, we used 3D printer with stereo lithography apparatus (SLA). In this study, we found the refractive index of highly transparent shape memory gels depend on monomer concentration, and does not depend on the cross-linker or initiator concentration. Furthermore, the cross-linker and initiator concentration can change the gelation progression rate. As a result, we have developed highly transparent shape memory gels, which can have a range of refractive indexes, and we defined the optimal conditions that can be modeling in the 3D printer by changing the cross-linker and initiator concentration. With these discoveries we were able to produce a gel intraocular-lens replica.

  20. Transparency

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Albu, Oana Brindusa

    2017-01-01

    Transparency is an increasingly prominent research topic in many scholarly disciplines and offers valuable insights for organizational communication. This entry provides an overview of the historical background and identifies some themes that presently inform the transparency literature. The entry...... then outlines the most important dimensions of the concept of transparency by highlighting two paradigmatic positions underpinning contemporary research in this area: namely, informational approaches that focus on the sharing of information and the perceived quality of that information and social process...... orientations that explore the dynamics of transparency in organizational settings. The entry highlights emergent methodological and conceptual insights concerning transparency as a dynamic and paradoxical social process with performative characteristics – an approach that remains underexplored....

  1. Transparent meta-analysis of prospective memory and aging.

    Directory of Open Access Journals (Sweden)

    Bob Uttl

    Full Text Available Prospective memory (ProM refers to our ability to become aware of a previously formed plan at the right time and place. After two decades of research on prospective memory and aging, narrative reviews and summaries have arrived at widely different conclusions. One view is that prospective memory shows large age declines, larger than age declines on retrospective memory (RetM. Another view is that prospective memory is an exception to age declines and remains invariant across the adult lifespan. The present meta-analysis of over twenty years of research settles this controversy. It shows that prospective memory declines with aging and that the magnitude of age decline varies by prospective memory subdomain (vigilance, prospective memory proper, habitual prospective memory as well as test setting (laboratory, natural. Moreover, this meta-analysis demonstrates that previous claims of no age declines in prospective memory are artifacts of methodological and conceptual issues afflicting prior research including widespread ceiling effects, low statistical power, age confounds, and failure to distinguish between various subdomains of prospective memory (e.g., vigilance and prospective memory proper.

  2. Time and total dose response of non-volatile UVPROMs

    International Nuclear Information System (INIS)

    Sampson, D.F.

    1988-01-01

    While survivability testing of floating gate non-volatile UVPROM memory devices has been documented in numerous journals, this paper reports on the total dose radiation response and intrinsic charge loss as a function of operating time in a system. Five groups of Intel and Signetics 27C256 devices were aged from one to five years through accelerated bake to simulate system use. Characterizations of the groups with five years of simulated use will be presented in detail in this paper. Device margin voltage was characterized before and after aging and after exposure to five total dose radiation levels (1K - 5K rads (Si)). A statistical model based upon the characterization data was developed to establish re-programming intervals for these devices when used in airborne electronic systems

  3. Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — Ionizing radiation in space can damage electronic equipment, corrupting data and even disabling computers. Radiation resistant (rad hard) strategies must be employed...

  4. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  5. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

    Science.gov (United States)

    Wang, Lai-Guo; Qian, Xu; Cao, Yan-Qiang; Cao, Zheng-Yi; Fang, Guo-Yong; Li, Ai-Dong; Wu, Di

    2015-01-01

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

  6. Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one

    NARCIS (Netherlands)

    Widdershoven, Franciscus P.; Annema, Anne J.; Storms, Maurits M.N.; Pelgrom, Marcellinus J.M.; Pelgrom, Marcel J M

    2001-01-01

    A non-volatile, random access memory cell comprises first and second inverters each having an output node cross-coupled by cross-coupling means to an input node of the other inverter for forming a MOS RAM cell. The output node of each inverter is selectively connected via the conductor paths of

  7. A novel architecture of non-volatile magnetic arithmetic logic unit using magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Guo, Wei; Prenat, Guillaume; Dieny, Bernard

    2014-01-01

    Complementary metal–oxide–semiconductor (CMOS) technology is facing increasingly difficult obstacles such as power consumption and interconnection delay. Novel hybrid technologies and architectures are being investigated with the aim to circumvent some of these limits. In particular, hybrid CMOS/magnetic technology based on magnetic tunnel junctions (MTJs) is considered as a very promising approach thanks to the full compatibility of MTJs with CMOS technology. By tightly merging the conventional electronics with magnetism, both logic and memory functions can be implemented in the same device. As a result, non-volatility is directly brought into logic circuits, yielding significant improvement of device performances and new functionalities as well. We have conceived an innovative methodology to construct non-volatile magnetic arithmetic logic units (MALUs) combining spin-transfer torque MTJs with MOS transistors. The present 4-bit MALU utilizes 4 MTJ pairs to store its operation code (opcode). Its operations and performances have been confirmed and evaluated through electrical simulations. (paper)

  8. Transparent Flash Memory Using Single Ta2O5Layer for Both Charge-Trapping and Tunneling Dielectrics.

    Science.gov (United States)

    Hota, Mrinal K; Alshammari, Fwzah H; Salama, Khaled N; Alshareef, Husam N

    2017-07-05

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta 2 O 5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 10 4 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.

  9. Reconfigurable Electronics and Non-Volatile Memory Research

    Science.gov (United States)

    2015-11-10

    energy of the spin-spin and spin-orbit angular moment of the electrons around an atom and the angular momentum (spin- spin and spin-orbit) of the...mode wavelength stabilized laser diode (Innovative Photonic Solutions). The Raman spectra were measured three times on different points for each...devices under test c) Custom switching circuitry is used to allow multiplexing the 150 rows by 150 columns of devices to 10 rows by 10 columns d

  10. Energy-Efficient Streaming Using Non-volatile Memory

    NARCIS (Netherlands)

    Khatib, M.G.; Hartel, Pieter H.; van Dijk, H.W.

    The disk and the DRAM in a typical mobile system consume a significant fraction (up to 30%) of the total system energy. To save on storage energy, the DRAM should be small and the disk should be spun down for long periods of time. We show that this can be achieved for predominantly streaming

  11. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

    Science.gov (United States)

    Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2016-01-01

    Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices. PMID:26831222

  12. A Technique for Improving Lifetime of Non-Volatile Caches Using Write-Minimization

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2016-01-01

    Full Text Available While non-volatile memories (NVMs provide high-density and low-leakage, they also have low write-endurance. This, along with the write-variation introduced by the cache management policies, can lead to very small cache lifetime. In this paper, we propose ENLIVE, a technique for ENhancing the LIfetime of non-Volatile cachEs. Our technique uses a small SRAM (static random access memory storage, called HotStore. ENLIVE detects frequently written blocks and transfers them to the HotStore so that they can be accessed with smaller latency and energy. This also reduces the number of writes to the NVM cache which improves its lifetime. We present microarchitectural schemes for managing the HotStore. Simulations have been performed using an x86-64 simulator and benchmarks from SPEC2006 suite. We observe that ENLIVE provides higher improvement in lifetime and better performance and energy efficiency than two state-of-the-art techniques for improving NVM cache lifetime. ENLIVE provides 8.47×, 14.67× and 15.79× improvement in lifetime or two, four and eight core systems, respectively. In addition, it works well for a range of system and algorithm parameters and incurs only small overhead.

  13. Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges

    International Nuclear Information System (INIS)

    Chon, Uong; Jang, Hyun M.; Shin, Nam S.; Kim, Jae S.; Ahn, Do C.; Kim, Yun S.; No, Kwangsoo

    2007-01-01

    Fatigue-free Gd-modified bismuth titanate (Bi 3.15 Gd 0.85 Ti 3 O 12 ; BGdT) film capacitors having stable charge-retaining characteristics were grown on Pt/TiO 2 /SiO 2 /Si(1 0 0) substrates using the method of metal-organic sol decomposition. The BGdT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P r ) and the non-volatile charge as compared to those of the Bi 4- x La x Ti 3 O 12 (BLT; x=0.75) film capacitor, currently renowned as a promising candidate for non-volatile memories. The saturated 2P r value of the BGdT capacitor was 75 μC/cm 2 while it remained essentially constant up to 4.5x10 10 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 52 μC/cm 2 and a strong resistance against the imprinting failure

  14. Vapor condensation onto a non-volatile liquid drop

    Energy Technology Data Exchange (ETDEWEB)

    Inci, Levent; Bowles, Richard K., E-mail: richard.bowles@usask.ca [Department of Chemistry, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5C9 (Canada)

    2013-12-07

    Molecular dynamics simulations of miscible and partially miscible binary Lennard–Jones mixtures are used to study the dynamics and thermodynamics of vapor condensation onto a non-volatile liquid drop in the canonical ensemble. When the system volume is large, the driving force for condensation is low and only a submonolayer of the solvent is adsorbed onto the liquid drop. A small degree of mixing of the solvent phase into the core of the particles occurs for the miscible system. At smaller volumes, complete film formation is observed and the dynamics of film growth are dominated by cluster-cluster coalescence. Mixing into the core of the droplet is also observed for partially miscible systems below an onset volume suggesting the presence of a solubility transition. We also develop a non-volatile liquid drop model, based on the capillarity approximations, that exhibits a solubility transition between small and large drops for partially miscible mixtures and has a hysteresis loop similar to the one observed in the deliquescence of small soluble salt particles. The properties of the model are compared to our simulation results and the model is used to study the formulation of classical nucleation theory for systems with low free energy barriers.

  15. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  16. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2014-06-10

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  17. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    NARCIS (Netherlands)

    Ghittorelli, M.; Lenz, Thomas; Dehsari, H.S.; Zhao (赵冬), Dong; Asadi, Kamal; Blom, Paul W.M.; Kovács-Vajna, Z. M.; de Leeuw, D.M.; Torricelli, F.

    2017-01-01

    Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory

  18. Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

    Science.gov (United States)

    Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

    2015-09-01

    Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

  19. An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product.

    Science.gov (United States)

    Biswas, Ayan K; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2014-12-23

    A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many of these nanomagnetic devices do not possess the seven essential characteristics of a Boolean logic gate : concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error rates tend to vastly exceed that of conventional transistor-based logic gates, which is unacceptable. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is two orders of magnitude less than that of other nanomagnetic (non-volatile) logic gates. The error rate is also superior.

  20. Hydrogen-peroxide-modified egg albumen for transparent and flexible resistive switching memory

    Science.gov (United States)

    Zhou, Guangdong; Yao, Yanqing; Lu, Zhisong; Yang, Xiude; Han, Juanjuan; Wang, Gang; Rao, Xi; Li, Ping; Liu, Qian; Song, Qunliang

    2017-10-01

    Egg albumen is modified by hydrogen peroxide with concentrations of 5%, 10%, 15% and 30% at room temperature. Compared with devices without modification, a memory cell of Ag/10% H2O2-egg albumen/indium tin oxide exhibits obviously enhanced resistive switching memory behavior with a resistance ratio of 104, self-healing switching endurance for 900 cycles and a prolonged retention time for a 104 s @ 200 mV reading voltage after being bent 103 times. The breakage of massive protein chains occurs followed by the recombination of new protein chain networks due to the oxidation of amidogen and the synthesis of disulfide during the hydrogen peroxide modifying egg albumen. Ions such as Fe3+, Na+, K+, which are surrounded by protein chains, are exposed to the outside of protein chains to generate a series of traps during the egg albumen degeneration process. According to the fitting results of the double logarithm I-V curves and the current-sensing atomic force microscopy (CS-AFM) images of the ON and OFF states, the charge transfer from one trap center to its neighboring trap center is responsible for the resistive switching memory phenomena. The results of our work indicate that hydrogen- peroxide-modified egg albumen could open up a new avenue of biomaterial application in nanoelectronic systems.

  1. Offline Forensic Analysis Of Microsoft Windows XP Physical Memory

    National Research Council Canada - National Science Library

    Schultz, John S

    2006-01-01

    .... Existing forensic tools that analyze non-volatile memory are not capable of analyzing volatile memory and the few tools that are capable of detailed analysis of volatile memory are not openly available to the public...

  2. Electric Field Tuning Non-volatile Magnetism in Half-Metallic Alloys Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructure

    Science.gov (United States)

    Dunzhu, Gesang; Wang, Fenglong; Zhou, Cai; Jiang, Changjun

    2018-03-01

    We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

  3. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  4. Memories are made of this

    OpenAIRE

    Marsh, George

    2001-01-01

    Traditional semiconductor memory falls into two categories—volatile and non-volatile. Volatile memories, such as SRAM (static random access memory) and DRAM (dynamic random access memory), lose their contents when power is rémoved. RAM memories are easy to use and perform well, but require a continuous power source—not ideal for battery-powered portable devices. Non-volatile memories retain their contents when power is removed and those in current use are derived from ROM (read-only memory). ...

  5. Flash drive memory apparatus and method

    Science.gov (United States)

    Hinchey, Michael G. (Inventor)

    2010-01-01

    A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass storage controller, and at least one other interface for a memory device, other than a USB interface, the at least one other interface being connected to the USB mass storage controller.

  6. Transistor device for multi-bit non-volatile storage

    International Nuclear Information System (INIS)

    Tan, S.G.; Jalil, M.B.A.; Kumar, Vimal; Liew, Thomas; Teo, K.L.; Chong, T.C.

    2006-01-01

    We propose a transistor model that incorporates multiple storage elements within a single transistor device. This device is thus smaller in size compared to the magnetoresistive random access memory (MRAM) with the same number of storage bits. The device model can function in both the current as well as voltage detection mode. Simulations were carried out at higher temperature, taking into consideration the spread of electron density above the Fermi level. We found that linear detection of conductance variation with the stored binary value can be achieved for a 3-bit storage device up to a temperature of 350 K

  7. Enhanced non-volatile and updatable holography using a polymer composite system.

    Science.gov (United States)

    Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

    2012-03-12

    Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

  8. Highly transparent and flexible bio-based polyimide/TiO2 and ZrO2 hybrid films with tunable refractive index, Abbe number, and memory properties.

    Science.gov (United States)

    Huang, Tzu-Tien; Tsai, Chia-Liang; Tateyama, Seiji; Kaneko, Tatsuo; Liou, Guey-Sheng

    2016-07-07

    The novel bio-based polyimide (4ATA-PI) and the corresponding PI hybrids of TiO2 or ZrO2 with excellent optical properties and thermal stability have been prepared successfully. The highly transparent 4ATA-PI containing carboxylic acid groups in the backbone could provide reaction sites for organic-inorganic bonding to obtain homogeneous hybrid films. These PI hybrid films showed a tunable refractive index (1.60-1.81 for 4ATA-PI/TiO2 and 1.60-1.80 for 4ATA-PI/ZrO2), and the 4ATA-PI/ZrO2 hybrid films revealed a higher optical transparency and Abbe's number than those of the 4ATA-PI/TiO2 system due to a larger band gap of ZrO2. By introducing TiO2 and ZrO2 as the electron acceptor into the 4ATA-PI system, the hybrid materials have a lower LUMO energy level which could facilitate and stabilize the charge transfer complex. Therefore, memory devices derived from these PI hybrid films exhibited tunable memory properties from DRAM, SRAM, to WORM with a different TiO2 or ZrO2 content from 0 wt% to 50 wt% with a high ON/OFF ratio (10(8)). In addition, the different energy levels of TiO2 and ZrO2 revealed specifically unique memory characteristics, implying the potential application of the prepared 4ATA-PI/TiO2 and 4ATA-PI/ZrO2 hybrid films in highly transparent memory devices.

  9. effect of non-volatile solute on the freezing point of malonic acid

    African Journals Online (AJOL)

    DR. AMINU

    and pestle were washed with liquid soap, rinsed with distilled water and then soaked in 10% HNO3 solution for 24 hrs (Todorovi et al 2001). They were then washed with .... concluded that addition of non-volatile solute decreases the freezing point of a solvent and the depression is directly proportional to the amount of.

  10. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Science.gov (United States)

    Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

    2016-07-01

    Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

  11. Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

    Directory of Open Access Journals (Sweden)

    Nikica Budimir

    2007-03-01

    Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

  12. Non-volatile fission product core release model evaluation in ISAAC 2.0 code

    International Nuclear Information System (INIS)

    Song, Y. M.; Park, S. Y.; Kim, H. D.

    2004-01-01

    To evaluate fission product core release behavior in ISAAC 2.0 code, which is an integrated severe accident computer code for PHWR plants, release fractions according to core release models and/or options are analyzed for major non-volatile fission product species under severe accident conditions. The upgrade models in ISAAC 2.0 beta version (2003), which has revised from ISAAC 1.0 (1995), are used as simulation tools and the reference plant is Wolsong 2/3/4 units. For the analyzed sequence, a hypothetical conservative large LOCA is selected initiated by a guillotine break in the reactor outlet header with total loss of feed water assuming that most of safety systems are not available. As analysis results, the release fractions of upgrade models were higher in the order of ORNL-B, CORSOR-M and CORSOR-O models and the release fractions of existing models were similar with the CORSOR-O case. In conclusion, most non-volatile fission products except Sb species whose initial inventory is very small are transported together with corium under severe accident conditions while only small amount (less than maximum several percents) are released and distributed into other regions due to their non-volatile characteristics. This model evaluation will help users to predict the difference and uncertainty among core release models, which results in easier comparison with other competitive codes

  13. Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

    Directory of Open Access Journals (Sweden)

    M. S. T. Barroso

    2011-06-01

    Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

  14. An intensive study of LPCVD silicon morphology and texture for non volatile memory

    NARCIS (Netherlands)

    Klootwijk, J.H.; van Kranenburg, H.; Cobianu, C.; Petrescu, V.; Woerlee, P.H.; Wallinga, Hans

    1995-01-01

    Results of an intensive study by means of XRD, SEM, AFM and TEM of the microstructure (i.e. the texture and morphology) of LPCVD silicon layers as a function of different process parameters are described. The influence of different deposition parameters, like partial and total pressure, doping,

  15. Integrating Two-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — The space radiation environment presents a significant hazard to the critical electronic components used in a variety of space applications. Many such applications...

  16. EqualChance: Addressing Intra-set Write Variation to Increase Lifetime of Non-volatile Caches

    Energy Technology Data Exchange (ETDEWEB)

    Mittal, Sparsh [ORNL; Vetter, Jeffrey S [ORNL

    2014-01-01

    To address the limitations of SRAM such as high-leakage and low-density, researchers have explored use of non-volatile memory (NVM) devices, such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches. A crucial limitation of NVMs, however, is that their write endurance is low and the large intra-set write variation introduced by existing cache management policies may further exacerbate this problem, thereby reducing the cache lifetime significantly. We present EqualChance, a technique to increase cache lifetime by reducing intra-set write variation. EqualChance works by periodically changing the physical cache-block location of a write-intensive data item within a set to achieve wear-leveling. Simulations using workloads from SPEC CPU2006 suite and HPC (high-performance computing) field show that EqualChance improves the cache lifetime by 4.29X. Also, its implementation overhead is small, and it incurs very small performance and energy loss.

  17. Emerging memory technologies design, architecture, and applications

    CERN Document Server

    2014-01-01

    This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to ex...

  18. Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

    International Nuclear Information System (INIS)

    Chen, Zhendong; Gao, Cunxu; Wei, Yanping; Zhang, Peng; Wang, Yutian; Zhang, Chao; Ma, Zhikun

    2017-01-01

    Electric-field control of magnetism is now an attractive trend to approach a new kind of fast, low-power-cost memory device. In this work, we report a strong non-volatile electric control of magnetism in an Fe–Al/Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 heterostructure. In this system, a 90° rotation of the in-plane uniaxial magnetic anisotropy is exhibited during the increase of the external electric field, which means the easy axis turns into a hard axis and the hard axis turns into an easy one. Additionally, a non-volatile switch of the remanence is observed after a sweeping of the electric field from 0 kV cm −1 to  ±  10 kV cm −1 , then back to 0 kV cm −1 . More interestingly, a 20% non-volatile magnetic state tuning driven by individual pulse electric fields is shown in contrast to large tuning up to 120% caused by pulse electric fields with small assistant pulse magnetic fields, which means a 180° reverse of the magnetization. These remarkable behaviors demonstrated in this heterostructure reveal a promising potential application in magnetic memory devices mediated by electric fields. (paper)

  19. Technology for Sustainment of Strategic Systems. Report Memory (MRAM) Product Development

    National Research Council Canada - National Science Library

    Beck, Vicki

    2004-01-01

    ...) Honeywell is developing radiation-hardened Magneto-resistive Random Access Memory (MRAM) non-volatile memory for military and aerospace products where data processing and storage performance is critical utilizing Motorola technology...

  20. Coding for flash memories

    OpenAIRE

    Yaakobi, Eitan

    2011-01-01

    Flash memories are, by far, the most important type of non -volatile memory in use today. They are employed widely in mobile, embedded, and mass-storage applications, and the growth in this sector continues at a staggering pace. Moreover, since flash memories do not suffer from the mechanical limitations of magnetic disk drives, solid- state drives have the potential to upstage the magnetic recording industry in the foreseeable future. The research goal of this dissertation is the discovery o...

  1. Non-volatile high-temperature shell-magnetic pinning of Ni-Mn-Sn Heusler precipitates obtained by decomposition under magnetic field

    Science.gov (United States)

    Çakır, A.; Acet, M.

    2018-02-01

    The thermodynamic instability of the off-stoichiometric Ni49.8Mn45.1Sn5.1 martensitic Heusler causes it to decompose into ferromagnetic Ni50Mn25Sn25 precipitates and an antiferromagnetic NiMn matrix. If the decomposition takes place under an applied magnetic field, the shell of the precipitates acquires a preferred spin orientation that is strongly pinned by the anisotropy of the matrix. The pinning leads to a large vertical shift in the field dependence of the magnetization even at temperatures as high as 500 K. The positive remanence remains permanent even when the magnetic field is cycled or when the sample is directionally manipulated with respect to the external field, providing a non-volatile magnetic-field-proof memory as a further functionality to those existing in martensitic Heuslers.

  2. UPLC-Q-TOF-MS analysis of non-volatile migrants from new active packaging materials.

    Science.gov (United States)

    Aznar, M; Rodriguez-Lafuente, A; Alfaro, P; Nerin, C

    2012-10-01

    Ultra-performance liquid chromatography (UPLC) coupled to mass spectrometry (MS) is a useful tool in the analysis of non-volatile compounds, and the use of a quadrupole-time-of-flight (Q-TOF) mass analyzer allows a high sensitivity and accuracy when acquiring full fragment mode, providing a high assurance of correct identification of unknown compounds. In this work, UPLC-Q-TOF-MS technology has been applied to the analysis of non-volatile migrants from new active packaging materials. The materials tested were based on polypropylene (PP), ethylene-vinyl alcohol copolymer (EVOH), and poly(ethylene terephthalate) (PET). The active packaging materials studied were one PP film containing a natural antioxidant, and two PP/EVOH films, two PET/EVOH films and one coextruded PP/EVOH/PP film containing natural antimicrobials. The chemical structure of several compounds was unequivocally identified. The analysis revealed the migration of some of the active substances used in the manufacture of active packaging, such as caffeine (0.07 ± 0.01 μg/g), carvacrol (0.31 ± 0.03 μg/g) and citral (0.20 ± 0.01 μg/g). Unintentionally added substances were also found, such as citral reaction compounds, or citral impurities present in the raw materials.

  3. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  4. Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    2018-01-01

    Transparency is an increasingly prominent area of research that offers valuable insights for organizational studies. However, conceptualizations of transparency are rarely subject to critical scrutiny and thus their relevance remains unclear. In most accounts, transparency is associated...... that shape the extant literature, with a focus on three dimensions: conceptualizations, conditions, and consequences. The contribution of the study is twofold: (a) On a conceptual level, we provide a framework that articulates two paradigmatic positions underpinning discussions of transparency, verifiability...... with the sharing of information and the perceived quality of the information shared. This narrow focus on information and quality, however, overlooks the dynamics of organizational transparency. To provide a more structured conceptualization of organizational transparency, this article unpacks the assumptions...

  5. TRANSPARENT CONCRETE

    OpenAIRE

    Sandeep Sharma*, Dr. O.P. Reddy

    2017-01-01

    Transparent concrete is the new type of concrete introduced in todays world which carries special property of light transmitting due to presence of light Optical fibres. Which is also known as translucent concrete or light transmitting concrete, it is achieved by replacing coarse aggregates with transparent alternate materials (Optical fibres). The binding material in transparent concrete may be able to transmit light by using clear resins the concrete mix. The concrete used in industry in pr...

  6. Fabrication of transparent, tough, and conductive shape-memory polyurethane films by incorporating a small amount of high-quality graphene.

    Science.gov (United States)

    Jung, Yong Chae; Kim, Jin Hee; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2012-04-23

    We report a mechanically strong, electrically and thermally conductive, and optically transparent shape-memory polyurethane composite which was fabricated by introducing a small amount (0.1 wt%) of high-quality graphene as a filler. Geometrically large (≈4.6 μm(2)), but highly crystallized few-layer graphenes, verified by Raman spectroscopy and transmission electron microscopy, were prepared by the sonication of expandable graphite in an organic solvent. Oxygen- containing functional groups at the edge plane of graphene were crucial for an effective stress transfer from the graphene to polyurethane. Homogeneously dispersed few-layered graphene enabled polyurethane to have a high shape recovery force of 1.8 MPa cm(-3). Graphene, which is intrinsically stretchable up to 10%, will enable high-performance composites to be fabricated at relatively low cost and we thus envisage that such composites may replace carbon nanotubes for various applications in the near future. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

    Science.gov (United States)

    Choi, Min Sup; Lee, Gwan-Hyoung; Yu, Young-Jun; Lee, Dae-Yeong; Lee, Seung Hwan; Kim, Philip; Hone, James; Yoo, Won Jong

    2013-01-01

    Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

  8. Chemical composition and non-volatile components of three wild edible mushrooms collected from northwest Tunisia

    Directory of Open Access Journals (Sweden)

    ibtissem Kacem Jedidi

    2016-04-01

    Full Text Available In Tunisia, many people collect wild edible mushrooms as pickers for their own consumption. The present work aims at contributing to the determination of the chemical composition, non volatile components content (soluble sugars, free amino acids and minerals and trace elements of three popular Tunisian wild edible mushrooms species collected from the northwest of Tunisia (Agaricus campestris, Boletus edulis and Cantharellus cibarius.All investigated mushrooms revealed that these species are rich sources of proteins (123.70 – 374.10 g kg-1 dry weight (DW and carbohydrates (403.3 – 722.40 g kg-1 DW, and low content of fat (28.2 – 39.9 g kg-1 DW; the highest energetic contribution was guaranteed by C. cibarius (1542.71 kJ / 100 g. A. compestris (33.14 mg/g DW showed the highest concentration of essential amino acids. The composition in individual sugars was also determined, mannitol and trehalose being the most abundant sugars. C. cibarius revealed the highest concentrations of carbohydrates (722.4 g kg-1 DW and A. compestris the lowest concentration (403.3 g kg-1 DW. Potassium (K and sodium (Na are the most abundant minerals in analyzed samples (A. compestris showed the highest concentrations of K and Na, 49141.44 and 9263.886 µg/g DW respectively.

  9. Analysis of the build-up of semi and non volatile organic compounds on urban roads.

    Science.gov (United States)

    Mahbub, Parvez; Ayoko, Godwin A; Goonetilleke, Ashantha; Egodawatta, Prasanna

    2011-04-01

    Vehicular traffic in urban areas may adversely affect urban water quality through the build-up of traffic generated semi and non volatile organic compounds (SVOCs and NVOCs) on road surfaces. The characterisation of the build-up processes is the key to developing mitigation measures for the removal of such pollutants from urban stormwater. An in-depth analysis of the build-up of SVOCs and NVOCs was undertaken in the Gold Coast region in Australia. Principal Component Analysis (PCA) and Multicriteria Decision tools such as PROMETHEE and GAIA were employed to understand the SVOC and NVOC build-up under combined traffic scenarios of low, moderate, and high traffic in different land uses. It was found that congestion in the commercial areas and use of lubricants and motor oils in the industrial areas were the main sources of SVOCs and NVOCs on urban roads, respectively. The contribution from residential areas to the build-up of such pollutants was hardly noticeable. It was also revealed through this investigation that the target SVOCs and NVOCs were mainly attached to particulate fractions of 75-300 μm whilst the redistribution of coarse fractions due to vehicle activity mainly occurred in the >300 μm size range. Lastly, under combined traffic scenario, moderate traffic with average daily traffic ranging from 2300 to 5900 and average congestion of 0.47 were found to dominate SVOC and NVOC build-up on roads. Copyright © 2011 Elsevier Ltd. All rights reserved.

  10. Discharge characteristics of an ablative pulsed plasma thruster with non-volatile liquid propellant

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-07-01

    Pulsed plasma thrusters (PPTs) are a form of electric spacecraft propulsion. They have an extremely simple structure and are highly suitable for nano/micro-spacecraft with weights in the kilogram range. Such small spacecraft have recently experienced increased growth but still lack suitable efficient propulsion systems. PPTs operate in a pulsed mode (one discharge = one shot) and typically use solid polytetrafluoroethylene (PTFE) as a propellant. However, new non-volatile liquids in the perfluoropolyether (PFPE) family have recently been found to be promising alternatives. A recent study presented results on the physical characteristics of PFPE vs. PTFE, showing that PFPE is superior in terms of physical characteristics such as its resistance to carbon deposition. This letter will examine the electrical discharge characteristics of PFPE vs. PTFE. The results demonstrate that PFPE has excellent shot-to-shot repeatability and a lower discharge resistance when compared with PTFE. Taken together with its physical characteristics, PFPE appears to be a strong contender to PTFE as a PPT propellant.

  11. Phase change memory

    CERN Document Server

    Qureshi, Moinuddin K

    2011-01-01

    As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t

  12. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  13. Studying the fate of non-volatile organic compounds in a commercial plasma air purifier

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Stefan [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Seiler, Cornelia; Gerecke, Andreas C. [Swiss Federal Laboratories for Material Science and Technology (EMPA), CH-8600 Dübendorf (Switzerland); Hächler, Herbert [University of Zürich, Institute for Food Safety and Hygiene, National Centre for Enteropathogenic Bacteria and Listeria (NENT), CH-8057 Zürich (Switzerland); Hilbi, Hubert [Ludwig-Maximilians-Universität München Max von Pettenkofer-Institut, D-80336 München (Germany); Frey, Joachim [University of Bern, Institute for Veterinary Bacteriology, CH-3001 Bern (Switzerland); Weidmann, Simon; Meier, Lukas; Berchtold, Christian [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland); Zenobi, Renato, E-mail: zenobi@org.chem.ethz.ch [ETH Zürich, Department of Chemistry and Applied Biosciences, CH-8093 Zürich (Switzerland)

    2013-07-15

    Highlights: • Degradation of environmental toxins, a protein, and bioparticles were studied. • A commercial air purifier based on a cold plasma was used. • Passage through the device reduced the concentration of the compounds/particles. • Deposition inside the plasma air purifier was the main removal process. -- Abstract: Degradation of non-volatile organic compounds–environmental toxins (methyltriclosane and phenanthrene), bovine serum albumin, as well as bioparticles (Legionella pneumophila, Bacillus subtilis, and Bacillus anthracis)–in a commercially available plasma air purifier based on a cold plasma was studied in detail, focusing on its efficiency and on the resulting degradation products. This system is capable of handling air flow velocities of up to 3.0 m s{sup −1} (3200 L min{sup −1}), much higher than other plasma-based reactors described in the literature, which generally are limited to air flow rates below 10 L min{sup −1}. Mass balance studies consistently indicated a reduction in concentration of the compounds/particles after passage through the plasma air purifier, 31% for phenanthrene, 17% for methyltriclosane, and 80% for bovine serum albumin. L. pneumophila did not survive passage through the plasma air purifier, and cell counts of aerosolized spores of B. subtilis and B. anthracis were reduced by 26- and 15-fold, depending on whether it was run at 10 Hz or 50 Hz, respectively. However rather than chemical degradation, deposition on the inner surfaces of the plasma air purifier occured. Our interpretation is that putative “degradation” efficiencies were largely due to electrostatic precipitation rather than to decomposition into smaller molecules.

  14. Color transparency

    International Nuclear Information System (INIS)

    Miller, G.A.

    1993-01-01

    Imagine shooting a beam of protons of high momentum P through an atomic nucleus. Usually the nuclear interactions prevent the particles from emerging with momentum ∼P. Further, the angular distribution of elastically scattered protons is close to the optical diffraction pattern produced by a black disk. Thus the nucleus acts as a black disk and is not transparent. However, certain high momentum transfer reactions in which a proton is knocked out of the nucleus may be completely different. Suppose that the high momentum transfer process leads to the formation of a small-size color singlet wavepacket that is ejected from the nucleus. The effects of gluons emitted by color singlet systems of closely separated quarks and gluons tend to cancel. Thus the wavepacket-nuclear interactions are suppressed, the nucleus becomes transparant and one says that color transparency CT occurs. The observation of CT also requires that the wavepacket not expand very much while it moves through the nucleus. Simple quantum mechanical formulations can assess this expansion. The creation of a small-sized wavepacket is expected in asymptotic perturbative effects. The author reviews the few experimental attempts to observe color transparency in nuclear (e,e'p) and (p,pp) reactions and interpret the data and their implications

  15. Transparency International

    NARCIS (Netherlands)

    Hulten, van M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the

  16. Public Transparency

    OpenAIRE

    UNCTAD; World Bank

    2018-01-01

    This note provides guidance on the type of information about agricultural investments that investors and governments can make publicly available. Transparency about certain aspects of investments can improve relations between investors and communities, enable external stakeholders to hold investors to commitments, and improve investors’ public image. Although some information should be kep...

  17. Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

    Directory of Open Access Journals (Sweden)

    Krystyna Przybył

    2011-01-01

    Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

  18. Volatile and non-volatile/semi-volatile compounds and in vitro bioactive properties of Chilean Ulmo (Eucryphia cordifolia Cav.) honey.

    Science.gov (United States)

    Acevedo, Francisca; Torres, Paulina; Oomah, B Dave; de Alencar, Severino Matias; Massarioli, Adna Prado; Martín-Venegas, Raquel; Albarral-Ávila, Vicenta; Burgos-Díaz, César; Ferrer, Ruth; Rubilar, Mónica

    2017-04-01

    Ulmo honey originating from Eucryphia cordifolia tree, known locally in the Araucania region as the Ulmo tree is a natural product with valuable nutritional and medicinal qualities. It has been used in the Mapuche culture to treat infections. This study aimed to identify the volatile and non-volatile/semi-volatile compounds of Ulmo honey and elucidate its in vitro biological properties by evaluating its antioxidant, antibacterial, antiproliferative and hemolytic properties and cytotoxicity in Caco-2 cells. Headspace volatiles of Ulmo honey were isolated by solid-phase microextraction (SPME); non-volatiles/semi-volatiles were obtained by removing all saccharides with acidified water and the compounds were identified by GC/MS analysis. Ulmo honey volatiles consisted of 50 compounds predominated by 20 flavor components. Two of the volatile compounds, lyrame and anethol have never been reported before as honey compounds. The non-volatile/semi-volatile components of Ulmo honey comprised 27 compounds including 13 benzene derivatives accounting 75% of the total peak area. Ulmo honey exhibited weak antioxidant activity but strong antibacterial activity particularly against gram-negative bacteria and methicillin-resistant Staphylococcus aureus (MRSA), the main strain involved in wounds and skin infections. At concentrations >0.5%, Ulmo honey reduced Caco-2 cell viability, released lactate dehydrogenase (LDH) and increased reactive oxygen species (ROS) production in a dose dependent manner in the presence of foetal bovine serum (FBS). The wide array of volatile and non-volatile/semi-volatile constituents of Ulmo honey rich in benzene derivatives may partly account for its strong antibacterial and antiproliferative properties important for its therapeutic use. Our results indicate that Ulmo honey can potentially inhibit cancer growth at least partly by modulating oxidative stress. Copyright © 2017 Elsevier Ltd. All rights reserved.

  19. Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

    Science.gov (United States)

    2016-09-01

    only), which includes hot and cold dilution with an evaporator , and finally to instrumentation for particle number measurements . However, several...DC, CDP and plume BC was measure using a Laser Induced Incandescence (LII) instrument. Data for the BC LII mass measurements at the plume and...AFRL-RQ-WP-TR-2016-0131 DEMONSTRATION OF NOVEL SAMPLING TECHNIQUES FOR MEASUREMENT OF TURBINE ENGINE VOLATILE AND NON-VOLATILE PARTICULATE

  20. Memory.

    Science.gov (United States)

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  1. Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

    Science.gov (United States)

    Zand, Ramtin; DeMara, Ronald F.

    2017-12-01

    In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

  2. Transparency International

    OpenAIRE

    Hulten, van, M. (Michel)

    2009-01-01

    Established in 1993, Transparency International (TI) defines itself as “the global civil society organization leading the fight against corruption, that brings people together in a powerful worldwide coalition to end the devastating impact of corruption on men, women and children around the world”. Its stated goal is “to take action to combat corruption and prevent criminal activities arising from corruption so as to help build a world in which Government, politics, business...

  3. Retooling Predictive Relations for non-volatile PM by Comparison to Measurements

    Science.gov (United States)

    Vander Wal, R. L.; Abrahamson, J. P.

    2015-12-01

    Non-volatile particulate matter (nvPM) emissions from jet aircraft at cruise altitude are of particular interest for climate and atmospheric processes but are difficult to measure and are normally approximated. To provide such inventory estimates the present approach is to use measured, ground-based values with scaling to cruise (engine operating) conditions. Several points are raised by this approach. First is what ground based values to use. Empirical and semi-empirical approaches, such as the revised first order approximation (FOA3) and formation-oxidation (FOX) methods, each with embedded assumptions are available to calculate a ground-based black carbon concentration, CBC. Second is the scaling relation that can depend upon the ratios of fuel-air equivalence, pressure, and combustor flame temperature. We are using measured ground-based values to evaluate the accuracy of present methods towards developing alternative methods for CBCby smoke number or via a semi-empirical kinetic method for the specific engine, CFM56-2C, representative of a rich-dome style combustor, and as one of the most prevalent engine families in commercial use. Applying scaling relations to measured ground based values and comparison to measurements at cruise evaluates the accuracy of current scaling formalism. In partnership with GE Aviation, performing engine cycle deck calculations enables critical comparison between estimated or predicted thermodynamic parameters and true (engine) operational values for the CFM56-2C engine. Such specific comparisons allow tracing differences between predictive estimates for, and measurements of nvPM to their origin - as either divergence of input parameters or in the functional form of the predictive relations. Such insights will lead to development of new predictive tools for jet aircraft nvPM emissions. Such validated relations can then be extended to alternative fuels with confidence in operational thermodynamic values and functional form

  4. Efficient Management for Hybrid Memory in Managed Language Runtime

    OpenAIRE

    Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

    2016-01-01

    Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

  5. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

    International Nuclear Information System (INIS)

    Hang-Bing, Lv; Peng, Zhou; Xiu-Feng, Fu; Ming, Yin; Ya-Li, Song; Li, Tang; Ting-Ao, Tang; Yin-Yin, Lin

    2008-01-01

    Resistive switching characteristics of Cu x O films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current–voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating

  6. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

    KAUST Repository

    Mao, Duo

    2010-05-01

    The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

  7. Dietary exposure to volatile and non-volatile N-nitrosamines from processed meat products in Denmark

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Christensen, Tue

    2015-01-01

    Recent epidemiological studies show a positive association between cancer incidence and high intake of processed meat. N-nitrosamines (NAs) in these products have been suggested as one potential causative factor. Most volatile NAs (VNAs) are classified as probable human carcinogens, whereas...... the carcinogenicity for the majority of the non-volatile NA (NVNA) remains to be elucidated. Danish adults (15–75 years) and children (4–6 years) consume 20 g and 16 g of processed meat per day (95th percentile), respectively. The consumption is primarily accounted for by sausages, salami, pork flank (spiced...

  8. Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface.

    Science.gov (United States)

    Zhang, Chao; Wang, Fenglong; Dong, Chunhui; Gao, Cunxu; Jia, Chenglong; Jiang, Changjun; Xue, Desheng

    2015-03-07

    We report non-volatile electric-field control of magnetism modulation in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Fe layer on a PMN-PT substrate using a molecular beam epitaxy technique. The remnant magnetization with a different electric field shows a non-symmetric loop-like shape, which demonstrates a change of interfacial chemistry and a large magnetoelectric coupling in Fe/PMN-PT at room temperature to realize low loss multistate memory under an electric field. Fitting with the angular-dependence of the in-plane magnetization reveals that the magnetoelectric effect is dominated by the direct electric-field effect rather than the strain effect at the interface. The magnetoelectric effect and the induced surface anisotropy are found to be dependent on the Fe film thickness and are linear with respect to the applied electric field.

  9. Identifying key non-volatile compounds in ready-to-drink green tea and their impact on taste profile.

    Science.gov (United States)

    Yu, Peigen; Yeo, Angelin Soo-Lee; Low, Mei-Yin; Zhou, Weibiao

    2014-07-15

    Thirty-nine non-volatile compounds in seven ready-to-drink (RTD) green tea samples were analysed and quantified using liquid chromatography. Taste reconstruction experiments using thirteen selected compounds were conducted to identify the key non-volatile tastants. Taste profiles of the reconstructed samples did not differ significantly from the RTD tea samples. To investigate the taste contribution and significance of individual compounds, omission experiments were carried out by removing individual or a group of compounds. Sensory evaluation revealed that the astringent- and bitter-tasting (-)-epigallocatechin gallate, bitter-tasting caffeine, and the umami-tasting l-glutamic acid were the main contributors to the taste of RTD green tea. Subsequently, the taste profile of the reduced recombinant, comprising of a combination of these three compounds and l-theanine, was found to not differ significantly from the sample recombinant and RTD tea sample. Lastly, regression models were developed to objectively predict and assess the intensities of bitterness and astringency in RTD green teas. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Directory of Open Access Journals (Sweden)

    Sukru Burc Eryilmaz

    2014-07-01

    Full Text Available Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

  11. Dynamics of Metabolite Induction in Fungal Co-cultures by Metabolomics at Both Volatile and Non-volatile Levels

    Directory of Open Access Journals (Sweden)

    Antonio Azzollini

    2018-02-01

    Full Text Available Fungal co-cultivation has emerged as a promising way for activating cryptic biosynthetic pathways and discovering novel antimicrobial metabolites. For the success of such studies, a key element remains the development of standardized co-cultivation methods compatible with high-throughput analytical procedures. To efficiently highlight induction processes, it is crucial to acquire a holistic view of intermicrobial communication at the molecular level. To tackle this issue, a strategy was developed based on the miniaturization of fungal cultures that allows for a concomitant survey of induction phenomena in volatile and non-volatile metabolomes. Fungi were directly grown in vials, and each sample was profiled by head space solid phase microextraction gas chromatography mass spectrometry (HS-SPME-GC-MS, while the corresponding solid culture medium was analyzed by liquid chromatography high resolution mass spectrometry (LC-HRMS after solvent extraction. This strategy was implemented for the screening of volatile and non-volatile metabolite inductions in an ecologically relevant fungal co-culture of Eutypa lata (Pers. Tul. & C. Tul. (Diatrypaceae and Botryosphaeria obtusa (Schwein. Shoemaker (Botryosphaeriaceae, two wood-decaying fungi interacting in the context of esca disease of grapevine. For a comprehensive evaluation of the results, a multivariate data analysis combining Analysis of Variance and Partial Least Squares approaches, namely AMOPLS, was used to explore the complex LC-HRMS and GC-MS datasets and highlight dynamically induced compounds. A time-series study was carried out over 9 days, showing characteristic metabolite induction patterns in both volatile and non-volatile dimensions. Relevant links between the dynamics of expression of specific metabolite production were observed. In addition, the antifungal activity of 2-nonanone, a metabolite incrementally produced over time in the volatile fraction, was assessed against Eutypa lata and

  12. Graphene Transparent Conductive Electrodes

    Data.gov (United States)

    National Aeronautics and Space Administration — As an atomic layer of graphite, graphene has ultrahigh optical transparency and superior electron mobility. We plan to develop graphene transparent conductive...

  13. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  14. Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

    Energy Technology Data Exchange (ETDEWEB)

    Arbulu, M. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Sampedro, M.C. [Central Service of Analysis, SGIker, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Gómez-Caballero, A.; Goicolea, M.A. [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain); Barrio, R.J., E-mail: r.barrio@ehu.es [Department of Analytical Chemistry, Faculty of Pharmacy, University of the Basque Country, 01006 Vitoria-Gasteiz (Spain)

    2015-02-09

    Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds.

  15. Untargeted metabolomic analysis using liquid chromatography quadrupole time-of-flight mass spectrometry for non-volatile profiling of wines

    International Nuclear Information System (INIS)

    Arbulu, M.; Sampedro, M.C.; Gómez-Caballero, A.; Goicolea, M.A.; Barrio, R.J.

    2015-01-01

    Highlights: • An untargeted metabolomic method for the non-volatile profile of the Graciano wine was developed. • 411 different metabolites in Graciano Vitis vinifera red wine were identified. • 15 compounds could serve to differentiate Graciano and Tempranillo wines. • An enological database (WinMet) with 2080 compounds was constructed. - Abstract: The current study presents a method for comprehensive untargeted metabolomic fingerprinting of the non-volatile profile of the Graciano Vitis vinifera wine variety, using liquid chromatography/electrospray ionization time of flight mass spectrometry (LC–ESI-QTOF). Pre-treatment of samples, chromatographic columns, mobile phases, elution gradients and ionization sources, were evaluated for the extraction of the maximum number of metabolites in red wine. Putative compounds were extracted from the raw data using the extraction algorithm, molecular feature extractor (MFE). For the metabolite identification the WinMet database was designed based on electronic databases and literature research and includes only the putative metabolites reported to be present in oenological matrices. The results from WinMet were compared with those in the METLIN database to evaluate how much the databases overlap for performing identifications. The reproducibility of the analysis was assessed using manual processing following replicate injections of Vitis vinifera cv. Graciano wine spiked with external standards. In the present work, 411 different metabolites in Graciano Vitis vinifera red wine were identified, including primary wine metabolites such as sugars (4%), amino acids (23%), biogenic amines (4%), fatty acids (2%), and organic acids (32%) and secondary metabolites such as phenols (27%) and esters (8%). Significant differences between varieties Tempranillo and Graciano were related to the presence of fifteen specific compounds

  16. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  17. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  18. Expression of MEP Pathway Genes and Non-volatile Sequestration Are Associated with Circadian Rhythm of Dominant Terpenoids Emission in Osmanthus fragrans Lour. Flowers

    Directory of Open Access Journals (Sweden)

    Riru Zheng

    2017-10-01

    Full Text Available Osmanthus fragrans Lour. is one of the top 10 traditional ornamental flowers in China famous for its unique fragrance. Preliminary study proved that the terpenoids including ionone, linalool, and ocimene and their derivatives are the dominant aroma-active compounds that contribute greatly to the scent bouquet. Pollination observation implies the emission of aromatic terpenoids may follow a circadian rhythm. In this study, we investigated the variation of volatile terpenoids and its potential regulators. The results showed that both volatile and non-volatile terpenoids presented circadian oscillation with high emission or accumulation during the day and low emission or accumulation during the night. The volatile terpenoids always increased to reach their maximum values at 12:00 h, while free and glycosylated compounds continued increasing throughout the day. The depletion of non-volatile pool might provide the substrates for volatile emission at 0:00–6:00, suggesting the sequestration of non-volatile compounds acted like a buffer regulating emission of terpenoids. Further detection of MEP pathway genes demonstrated that their expressions increased significantly in parallel with the evident increase of both volatile and non-volatile terpenoids during the day, indicating that the gene expressions were also closely associated with terpenoid formation. Thus, the expression of MEP pathway genes and internal sequestration both played crucial roles in modulating circadian rhythm of terpenoid emission in O. fragrans.

  19. Analysis of drugs of forensic interest with capillary zone electrophoresis/time-of-flight mass spectrometry based on the use of non-volatile buffers

    Czech Academy of Sciences Publication Activity Database

    Gottardo, R.; Mikšík, Ivan; Aturki, Z.; Sorio, D.; Seri, C.; Fanali, S.; Tagliaro, F.

    2012-01-01

    Roč. 33, č. 4 (2012), s. 599-606 ISSN 0173-0835 R&D Projects: GA ČR(CZ) GA203/08/1428 Institutional research plan: CEZ:AV0Z50110509 Keywords : capillary electrophoresis * drugs of abuse * non-volatile buffer * CE-MS Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.261, year: 2012

  20. A taste of sweet pepper: Volatile and non-volatile chemical composition of fresh sweet pepper (Capsicum annuum) in relation to sensory evaluation of taste

    NARCIS (Netherlands)

    Eggink, P.M.; Maliepaard, C.A.; Tikunov, Y.M.; Haanstra, J.P.W.; Bovy, A.G.; Visser, R.G.F.

    2012-01-01

    In this study volatile and non-volatile compounds, as well as some breeding parameters, were measured in mature fruits of elite sweet pepper (Capsicum annuum) lines and hybrids from a commercial breeding program, several cultivated genotypes and one gene bank accession. In addition, all genotypes

  1. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    Science.gov (United States)

    Ghittorelli, Matteo; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovács-Vajna, Zsolt M.; de Leeuw, Dago M.; Torricelli, Fabrizio

    2017-06-01

    Non-volatile memories--providing the information storage functionality--are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm-2.

  2. Single event upset immunity of strontium bismuth tantalate ferroelectric memories

    International Nuclear Information System (INIS)

    Benedetto, J.M.; Derbenwick, G.F.; Cuchiaro, J.D.

    1999-01-01

    An embedded 1Kbit non-volatile (NV) serial memory manufactured with strontium bismuth tantalate (SBT) ferroelectric (FE) technology was shown to be immune to effects of heavy ion irradiation. The memories did not lose any data in the non-volatile mode when exposed to xenon (maximum effective LET of 128 MeV-cm 2 /mg and a total fluence of 1.5 x 10 7 ions/cm 2 ). The ferroelectric memories also did not exhibit any loss in the ability to rewrite new data into the memory bits, indicating that no significant degradation of the FE dipoles occurred as a result of the heavy ion exposure. The fast read/write times of FE memories also means that single event gate rupture is unlikely to occur in this technology

  3. Occurrence of volatile and non-volatile N-nitrosamines in processed meat products and the role of heat treatment

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Granby, Kit

    2015-01-01

    Most of the available data on the occurrence of N-nitrosamines (NA) in processed meat products have been generated in the 1980s and 1990s and especially data on the occurrence of non-volatile NA (NVNA) are scarce. Therefore we have studied the levels of volatile nitrosamines (VNA) and NVNA...... in processed meat products on the Danish market (N = 70) and for comparison also products on the Belgian market (N = 20). The effect of heat treatment on the NA levels, in selected samples, was also studied, in order to enable an evaluation of how preparation before consumption affects the levels of NA...... μg kg−1 for one Danish sample and two Belgian samples. Levels of up to 2000 and 4000 μg kg−1 of N-nitroso-thiazolidine-4-carboxylic acid (NTCA) an NVNA occurred in the Danish and the Belgian samples, respectively. The majority of the Danish processed meat products contain NVNA but also VNA occur...

  4. Changes in Volatile and Non-Volatile Flavor Chemicals of “Valencia” Orange Juice over the Harvest Seasons

    Directory of Open Access Journals (Sweden)

    Jinhe Bai

    2016-01-01

    Full Text Available Florida “Valencia” oranges have a wide harvest window, covering four months after first reaching the commercial maturity. However, the influence of harvest time on juice flavor chemicals is not well documented, with the exception of sugars and acids. Therefore, we investigated the major flavor chemicals, volatile (aroma, non-volatile (taste and mouth feel attributes, in the two harvest seasons (March to June in 2007 and February to May in 2012. Bitter limonoid compounds, limonin and nomilin, decreased gradually. Out of a total of 94 volatiles, 32 increased, 47 peaked mid to late season, and 15 decreased. Juice insoluble solids and pectin content increased over the season; however, pectin methylesterase activity remained unchanged. Fruit harvested in the earlier months had lower flavor quality. Juice from later harvests had a higher sugar/acid ratio with less bitterness, while, many important aroma compounds occurred at the highest concentrations in the middle to late season, but occurred at lower concentrations at the end of the season. The results provide information to the orange juice processing industry for selection of optimal harvest time and for setting of precise blending strategy.

  5. Changes in Volatile and Non-Volatile Flavor Chemicals of "Valencia" Orange Juice over the Harvest Seasons.

    Science.gov (United States)

    Bai, Jinhe; Baldwin, Elizabeth A; McCollum, Greg; Plotto, Anne; Manthey, John A; Widmer, Wilbur W; Luzio, Gary; Cameron, Randall

    2016-01-04

    Florida "Valencia" oranges have a wide harvest window, covering four months after first reaching the commercial maturity. However, the influence of harvest time on juice flavor chemicals is not well documented, with the exception of sugars and acids. Therefore, we investigated the major flavor chemicals, volatile (aroma), non-volatile (taste) and mouth feel attributes, in the two harvest seasons (March to June in 2007 and February to May in 2012). Bitter limonoid compounds, limonin and nomilin, decreased gradually. Out of a total of 94 volatiles, 32 increased, 47 peaked mid to late season, and 15 decreased. Juice insoluble solids and pectin content increased over the season; however, pectin methylesterase activity remained unchanged. Fruit harvested in the earlier months had lower flavor quality. Juice from later harvests had a higher sugar/acid ratio with less bitterness, while, many important aroma compounds occurred at the highest concentrations in the middle to late season, but occurred at lower concentrations at the end of the season. The results provide information to the orange juice processing industry for selection of optimal harvest time and for setting of precise blending strategy.

  6. Changes in Volatile and Non-Volatile Flavor Chemicals of “Valencia” Orange Juice over the Harvest Seasons

    Science.gov (United States)

    Bai, Jinhe; Baldwin, Elizabeth A.; McCollum, Greg; Plotto, Anne; Manthey, John A.; Widmer, Wilbur W.; Luzio, Gary; Cameron, Randall

    2016-01-01

    Florida “Valencia” oranges have a wide harvest window, covering four months after first reaching the commercial maturity. However, the influence of harvest time on juice flavor chemicals is not well documented, with the exception of sugars and acids. Therefore, we investigated the major flavor chemicals, volatile (aroma), non-volatile (taste) and mouth feel attributes, in the two harvest seasons (March to June in 2007 and February to May in 2012). Bitter limonoid compounds, limonin and nomilin, decreased gradually. Out of a total of 94 volatiles, 32 increased, 47 peaked mid to late season, and 15 decreased. Juice insoluble solids and pectin content increased over the season; however, pectin methylesterase activity remained unchanged. Fruit harvested in the earlier months had lower flavor quality. Juice from later harvests had a higher sugar/acid ratio with less bitterness, while, many important aroma compounds occurred at the highest concentrations in the middle to late season, but occurred at lower concentrations at the end of the season. The results provide information to the orange juice processing industry for selection of optimal harvest time and for setting of precise blending strategy. PMID:28231099

  7. A partial least squares model for non-volatile residue quantification using diffuse reflectance infrared reflectance spectroscopy

    Science.gov (United States)

    Chen, Amylynn; Moision, Robert M.

    2016-09-01

    Traditionally, quantification of non-volatile residue (NVR) on surfaces relevant to space systems has been performed using solvent wipes for NVR removal followed by gravimetric analysis. In this approach the detectable levels of NVR are ultimately determined by the mass sensitivity of the analytical balance employed. Unfortunately, for routine samples, gravimetric measurement requires large sampling areas, on the order of a square foot, in order to clearly distinguish sample and background levels. Diffuse Reflectance Infrared Reflectance Spectroscopy (DRIFTS) is one possible alternative to gravimetric analysis for NVR measurement. DRIFTS is an analytical technique used for the identification and quantification of organic compounds that has two primary advantages relative to gravimetric based methods: increased sensitivity and the ability to identify classes of organic species present. However, the use of DRIFTS is not without drawbacks, most notably repeatability of sample preparation and the additive quantification uncertainty arising from overlapping infrared signatures. This can result in traditional calibration methods greatly overestimating the concentration of species in mixtures. In this work, a partial least squares (PLS) regression model is shown to be an effective method for removing the over prediction error of a three component mixture of common contaminant species.

  8. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

    Science.gov (United States)

    van de Burgt, Yoeri; Lubberman, Ewout; Fuller, Elliot J.; Keene, Scott T.; Faria, Grégorio C.; Agarwal, Sapan; Marinella, Matthew J.; Alec Talin, A.; Salleo, Alberto

    2017-04-01

    The brain is capable of massively parallel information processing while consuming only ~1-100 fJ per synaptic event. Inspired by the efficiency of the brain, CMOS-based neural architectures and memristors are being developed for pattern recognition and machine learning. However, the volatility, design complexity and high supply voltages for CMOS architectures, and the stochastic and energy-costly switching of memristors complicate the path to achieve the interconnectivity, information density, and energy efficiency of the brain using either approach. Here we describe an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors. ENODe switches at low voltage and energy (500 distinct, non-volatile conductance states within a ~1 V range, and achieves high classification accuracy when implemented in neural network simulations. Plastic ENODes are also fabricated on flexible substrates enabling the integration of neuromorphic functionality in stretchable electronic systems. Mechanical flexibility makes ENODes compatible with three-dimensional architectures, opening a path towards extreme interconnectivity comparable to the human brain.

  9. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    2015-01-01

    The current emphasis on organizational transparency signifies a growing demand for insight, clarity, accountability, and participation. Holding the promise of improved access to valid and trustworthy knowledge about organizations, the transparency pursuit has great potential for enhanced organiza...

  10. Innovative transparent armour concepts

    NARCIS (Netherlands)

    Carton, E.P.; Broos, J.P.F.

    2011-01-01

    Ever since WWII transparent armour consists of a multi-layer of glass panels bonded by thin polymer bond-films using an autoclave process. TNO has worked on the development of innovative transparent armour concepts that are lighter and a have better multi-hit capacity. Two new transparent armour

  11. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  12. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  13. The art of transparency.

    Science.gov (United States)

    Sayim, Bilge; Cavanagh, Patrick

    2011-01-01

    Artists throughout the ages have discovered a number of techniques to depict transparency. With only a few exceptions, these techniques follow closely the properties of physical transparency. The two best known properties are X-junctions and the luminance relations described by Metelli. X-junctions are seen where the contours of a transparent material cross contours of the surface behind; Metelli's constraints on the luminance relations between the direct and filtered portions of the surface specify a range of luminance values that are consistent with transparency. These principles have been used by artists since the time of ancient Egypt. However, artists also discovered that stimuli can be seen as transparent even when these physical constraints are not met. Ancient Greek artists, for example, were able to depict transparent materials in simple black-and-white line drawings. Artists also learned how to represent transparency in cases where neither X-junctions nor Metelli's constraints could apply: for example, where no portions of the objects behind the transparent material extend beyond it. Many painters convincingly portrayed transparency in these cases by depicting the effects the transparent medium would have on material or object properties. Here, we show how artists employed these and other techniques revealing their anticipation of current formalizations of perceived transparency, and we suggest new, as-yet-untested principles.

  14. Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process.

    Science.gov (United States)

    Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho; Kim, Hee-Dong

    2018-09-01

    In recent research of resistive random access memory (RRAM), solving the degradation phenomenon induced by both a high forming voltage to form the conducting filaments (CFs) and a high reset current is one of the main issues encountered. In this study, to overcome these problems, we propose forming-free bipolar resistive switching (BRS) behaviors by employing an ITO film with abundant oxygen vacancies, instead of conventional CF based RRAM requiring a forming process, and systematically investigate the feasibility of forming free BRS behaviors and a possible switching mechanism. Compared to conventional CF based RRAM devices, it is possible for the proposed devices to achieve stable BRS properties (i.e., narrow variations of operating current and voltage, and retention) without the forming process, under an operating current of sub-nano ampere. In addition, the proposed cell shows a stable hysteresis of current-voltage curves, which is well matched with the Poole-Frenkel emission, and currents at a low voltage are limited due to a formed barrier height like Schottky diode between the active layer and electrodes.

  15. Bdor\\Orco is important for oviposition-deterring behavior induced by both the volatile and non-volatile repellents in Bactrocera dorsalis (Diptera: Tephritidae).

    Science.gov (United States)

    Yi, Xin; Zhao, Haiming; Wang, Peidan; Hu, Meiying; Zhong, Guohua

    2014-06-01

    Several studies have shown that the selections of gravid females to potential oviposition sites from a distance were mediated by volatile signals, however, the means by which the sensory cues from non-volatile chemicals affected the insect behavior were still a controversial subject. Chemosensory in insect is a complex process, which is mediated by multigene families of chemoreceptors, including olfactory receptors, olfactory co-receptors, and odorant-binding proteins. To elucidate the chemoreception mechanism of volatile and non-volatile chemicals, the roles of Orco and OBP in oviposition-deterrent activities induced by citronellal and Rhodojaponin-III were investigated. Our results suggested that RNAi-mediated expression inhibition was successfully achieved by feeding dsRNA in Bactrocera dorsalis. High levels of Bdor\\Orco expression were essential for recognizing two chemicals of different physical properties, whereas the expression of Bdor\\OBP was only imperative in perception of volatile chemical. The results suggested that volatile and non-volatile chemicals may evoke distinct molecular basis for chemosensory in the flies, while Orco was essential in the perception of both chemicals. The study highlighted that the central role of Orco in chemical recognition, which enabled it to be the universally applied target of designing new botanical pesticide. Copyright © 2014 Elsevier Ltd. All rights reserved.

  16. A taste of sweet pepper: Volatile and non-volatile chemical composition of fresh sweet pepper (Capsicum annuum) in relation to sensory evaluation of taste.

    Science.gov (United States)

    Eggink, P M; Maliepaard, C; Tikunov, Y; Haanstra, J P W; Bovy, A G; Visser, R G F

    2012-05-01

    In this study volatile and non-volatile compounds, as well as some breeding parameters, were measured in mature fruits of elite sweet pepper (Capsicum annuum) lines and hybrids from a commercial breeding program, several cultivated genotypes and one gene bank accession. In addition, all genotypes were evaluated for taste by a trained descriptive sensory expert panel. Metabolic contrasts between genotypes were caused by clusters of volatile and non-volatile compounds, which could be related to metabolic pathways and common biochemical precursors. Clusters of phenolic derivatives, higher alkanes, sesquiterpenes and lipid derived volatiles formed the major determinants of the genotypic differences. Flavour was described with the use of 14 taste attributes, of which the texture related attributes and the sweet-sour contrast were the most discriminatory factors. The attributes juiciness, toughness, crunchiness, stickiness, sweetness, aroma, sourness and fruity/apple taste could be significantly predicted with combined volatile and non-volatile data. Fructose and (E)-2-hexen-1-ol were highly correlated with aroma, fruity/apple taste and sweetness. New relations were found for fruity/apple taste and sweetness with the compounds p-menth-1-en-9-al, (E)-β-ocimene, (Z)-2-penten-1-ol and (E)-geranylacetone. Based on the overall biochemical and sensory results, the perspectives for flavour improvement by breeding are discussed. Copyright © 2011 Elsevier Ltd. All rights reserved.

  17. Nonvolatile Memory Technology for Space Applications

    Science.gov (United States)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  18. Transparency and Product Variety

    DEFF Research Database (Denmark)

    Schultz, Christian

    We study the long run e¤ects of transparency in a circular town model of a differentiated market. The market is not fully transparent on the consumer side: A fraction of consumers are uninformed about prices. Increasing transparency reduces the equilibrium price, profit and entry of firms...... firm enters and acts like a monopolist. Consumers therefore prefer that market transparency is as high as possible under the restriction that the market should allow entry for two firms. If firms choose mixed entry strategies, consumers prefer full transparency....... This improves welfare. If consumers' transportation cost is high, it also improves the average utility of consumers. When transportation costs are very small, the fully transparent market features cut throat competition if there are several firms in the market, and if firms choose pure entry strategies only one...

  19. Transparency in Organizing

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa

    This dissertation provides a critical analysis of transparency in the context of organizing. The empirical material is based on qualitative studies of international cooperative organizations. The dissertation seeks to contribute to transparency and organizing scholarship by adopting a communication...... centred approach to explore the implications of pursuing ideals of transparency in organizational relationships. The dissertation is comprised of four papers each contributing to extant debates in organizational studies and transparency literature. The findings indicate that transparency, in contrast...... to being a solution for efficiency and democratic organizing, is a communicatively contested process which may lead to unintended consequences. The dissertation shows that transparency is performative: it can impact authority by de/legitimating action, shape the processes of organizational identity co...

  20. Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

    Science.gov (United States)

    Lee, Jong-Sun; Kim, Dong-Won; Kim, Hea-Jee; Jin, Soo-Min; Song, Myung-Jin; Kwon, Ki-Hyun; Park, Jea-Gun; Jalalah, Mohammed; Al-Hajry, Ali

    2018-01-01

    The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as 106 AC write/erase endurance cycles with 100-μs AC pulse width and a long retention time of 7.4-years at 85 °C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories.

  1. Transparency in Organizing

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa

    to being a solution for efficiency and democratic organizing, is a communicatively contested process which may lead to unintended consequences. The dissertation shows that transparency is performative: it can impact authority by de/legitimating action, shape the processes of organizational identity co......This dissertation provides a critical analysis of transparency in the context of organizing. The empirical material is based on qualitative studies of international cooperative organizations. The dissertation seeks to contribute to transparency and organizing scholarship by adopting a communication...

  2. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    2014-01-01

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show that the...... the functional form between market-wide transparency and liquidity. The relationship is non-monotonic, which can explain the lack of consensus in the existing literature where each empirical study is naturally confined to specific parts of the transparency domain....

  3. Subscribing to Transparency

    DEFF Research Database (Denmark)

    He, Yinghua; Nielsson, Ulf; Guo, Hong

    The paper empirically explores how more trade transparency affects market liquidity. The analysis takes advantage of a unique setting in which the Shanghai Stock Exchange offered more trade transparency to market participants subscribing to a new software package. First, the results show that the...... the functional form between market-wide transparency and liquidity. The relationship is non-monotonic, which can explain the lack of consensus in the existing literature where each empirical study is naturally confined to specific parts of the transparency domain....

  4. Privacy transparency patterns

    NARCIS (Netherlands)

    Siljee B.I.J.

    2015-01-01

    This paper describes two privacy patterns for creating privacy transparency: the Personal Data Table pattern and the Privacy Policy Icons pattern, as well as a full overview of privacy transparency patterns. It is a first step in creating a full set of privacy design patterns, which will aid

  5. The transparency of creoles

    NARCIS (Netherlands)

    Leufkens, S.

    2013-01-01

    In this article I propose that creoles are relatively transparent compared to their source languages. This means that they display more one-to-one relations between meaning and form. Transparency should be distinguished from the concepts of simplicity, ease of acquisition, and regularity.

  6. On color transparency

    International Nuclear Information System (INIS)

    Jennings, B.K.; Miller, G.A.

    1989-10-01

    A quantum mechanical treatment of high momentum transfer nuclear processes is presented. Color transparency, the suppression of initial and final state interaction effects, is shown to arise from using the closure approximation. New conditions for the appearance of color transparency are derived

  7. Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks

    Science.gov (United States)

    Zhu, Hao; Bonevich, John E.; Li, Haitao; Richter, Curt A.; Yuan, Hui; Kirillov, Oleg; Li, Qiliang

    2014-06-01

    In this work, multi-bit flash-like memory cell based on Si nanowire field-effect transistor and multiple Ta2O5 charge-trapping stacks have been fabricated and fully characterized. The memory cells exhibited staircase, discrete charged states at small gate voltages. Such discrete multi-bit on one memory cell is attractive for high memory density. These non-volatile memory devices exhibited fast programming/erasing speed, excellent retention, and endurance, indicating the advantages of integrating the multilayer of charge-storage stacks on the nanowire channel. Such high-performance flash-like non-volatile memory can be integrated into the microprocessor chip as the local memory which requires high density and good endurance.

  8. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Analysis of Non-Volatile Chemical Constituents of Menthae Haplocalycis Herba by Ultra-High Performance Liquid Chromatography-High Resolution Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Lu-Lu Xu

    2017-10-01

    Full Text Available Menthae Haplocalycis herba, one kind of Chinese edible herbs, has been widely utilized for the clinical use in China for thousands of years. Over the last decades, studies on chemical constituents of Menthae Haplocalycis herba have been widely performed. However, less attention has been paid to non-volatile components which are also responsible for its medical efficacy than the volatile constituents. Therefore, a rapid and sensitive method was developed for the comprehensive identification of the non-volatile constituents in Menthae Haplocalycis herba using ultra-high performance liquid chromatography coupled with linear ion trap-Orbitrap mass spectrometry (UHPLC-LTQ-Orbitrap. Separation was performed with Acquity UPLC® BEH C18 column (2.1 mm × 100 mm, 1.7 μm with 0.2% formic acid aqueous solution and acetonitrile as the mobile phase under gradient conditions. Based on the accurate mass measurement (<5 ppm, MS/MS fragmentation patterns and different chromatographic behaviors, a total of 64 compounds were unambiguously or tentatively characterized, including 30 flavonoids, 20 phenolic acids, 12 terpenoids and two phenylpropanoids. Finally, target isolation of three compounds named Acacetin, Rosmarinic acid and Clemastanin A (first isolated from Menthae Haplocalycis herba were performed based on the obtained results, which further confirmed the deduction of fragmentation patterns and identified the compounds profile in Menthae Haplocalycis herba. Our research firstly systematically elucidated the non-volatile components of Menthae Haplocalycis herba, which laid the foundation for further pharmacological and metabolic studies. Meanwhile, our established method was useful and efficient to screen and identify targeted constituents from traditional Chinese medicine extracts.

  10. Low-cost fabrication of ternary CuInSe{sub 2} nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    Energy Technology Data Exchange (ETDEWEB)

    Chawla, Parul; Narain Sharma, Shailesh, E-mail: shailesh@nplindia.org; Singh, Son

    2014-11-15

    Wet-route synthesis of CuInSe{sub 2} (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (E{sub g})∼1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (∼250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles. - Graphical abstract: Without resorting to any post-selenization process and using the colligative properties of the mixture comprising of volatile aniline and non-volatile 1-octadecene to manoeuvre the growth conditions to promote Ostwald ripening, a single phase, monodispersive and nearly stoichiometric ternary CISe nanocrystals are formed by wet-synthesis route. - Highlights: • Wet-route synthesis of CISe nanocrystals reported without post-selenization process. • Single-phase, stable and well-passivated colloidal ternary CISe nanocrystals formed. • Novel combination of capping agents: volatile aniline and non-volatile 1-octadecene. • Higher growth temperature attained using the colligative properties of the mixture. • Metallic salts presence explains exp. and theoretical boiling point difference.

  11. Magnetic vortex racetrack memory

    International Nuclear Information System (INIS)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-01-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

  12. A Dictionary for Transparency

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.

    2001-11-15

    There are many terms that are used in association with the U.S. Defense Threat Reduction Agency (DTRA) Transparency Project associated with the Mayak Fissile Materials Storage Facility. This is a collection of proposed definitions of these terms.

  13. Transparent Armor Structure

    National Research Council Canada - National Science Library

    Gonzalez, Rene G

    2004-01-01

    ... of tempered silica glass bonded to form a laminated bullet resisting structure and also having a bracket member adapted to hold a second transparent spall resisting layer parallel to and slightly spaced...

  14. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    The current emphasis on organizational and institutional transparency – driven by NGOs, inquisitive media, critical investors and other engaged stakeholders – signifies a growing demand for insight, clarity, participation and democracy. Holding the promise of improved access to valid and trustwor......The current emphasis on organizational and institutional transparency – driven by NGOs, inquisitive media, critical investors and other engaged stakeholders – signifies a growing demand for insight, clarity, participation and democracy. Holding the promise of improved access to valid...

  15. Evaluation of non-volatile metabolites in beer stored at high temperature and utility as an accelerated method to predict flavour stability.

    Science.gov (United States)

    Heuberger, Adam L; Broeckling, Corey D; Sedin, Dana; Holbrook, Christian; Barr, Lindsay; Kirkpatrick, Kaylyn; Prenni, Jessica E

    2016-06-01

    Flavour stability is vital to the brewing industry as beer is often stored for an extended time under variable conditions. Developing an accelerated model to evaluate brewing techniques that affect flavour stability is an important area of research. Here, we performed metabolomics on non-volatile compounds in beer stored at 37 °C between 1 and 14 days for two beer types: an amber ale and an India pale ale. The experiment determined high temperature to influence non-volatile metabolites, including the purine 5-methylthioadenosine (5-MTA). In a second experiment, three brewing techniques were evaluated for improved flavour stability: use of antioxidant crowns, chelation of pro-oxidants, and varying plant content in hops. Sensory analysis determined the hop method was associated with improved flavour stability, and this was consistent with reduced 5-MTA at both regular and high temperature storage. Future studies are warranted to understand the influence of 5-MTA on flavour and aging within different beer types. Copyright © 2016 Elsevier Ltd. All rights reserved.

  16. Conditions of steady switching in phase-transition memory cells

    International Nuclear Information System (INIS)

    Popov, A. I.; Salnikov, S. M.; Anufriev, Yu. V.

    2015-01-01

    Three types of non-volatile memory cells of different designs based on phase transitions are developed and implemented. The effect of the design features of the cells and their active-region sizes on the switching characteristics and normal operation of the cells is considered as a whole. The causes of failure of the cells are analyzed from the obtained series of scanning electron images upon level-by-level etching of the samples. It is shown that the cell design is the most critical factor from the viewpoint of switching to the high-resistance state. The causes of this fact are analyzed and the criterion for providing the steady operation of cells of non-volatile memory based on phase transitions is formulated

  17. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  18. Supporting Transparency between Students

    DEFF Research Database (Denmark)

    Dalsgaard, Christian

    The paper presents the results of a case study that explores the potentials of weblogs and social bookmarking to support transparency in a university course. In the course, groups of students used weblogs and social bookmarking in their work. The objective of the case was to empower students...... by providing them with tools that would be visible to the other students in the course, thus, making students’ ideas, thoughts and questions visible to the other students in the course. The paper concludes that use of digital media for transparency can support empowerment of students and inspiration among...... students in a course, but that the challenge is to create a balance between personal tools and tools for collaborative group work that are also suitable for transparency between students....

  19. Research of influence of the underlayer material on the growth rate of carbon nanotube arrays for manufacturing non-volatile memory elements with high speed

    Science.gov (United States)

    Klimin, V. S.; Il'ina, M. V.; Il'in, O. I.; Rudyk, N. N.; Ageev, O. A.

    2017-11-01

    This experimental work is devoted to the regimes of obtaining arrays of carbon nanotubes. Arrays of perpendicular nanotubes perpendicular to the surface were obtained by the method of Plasma-enhanced chemical vapor deposition. In this paper, geometric and electronic parameters of carbon nanotubes were investigated depending on the material of the sublayer. The rates of growth of carbon nanotubes on various structures were also determined. In the experiments for growth, structures such as Ni-Al-Si, Ni-V-Si, Ni-Ti-Si, Ni-Cr-Si were used. The growth rates for the intensive section were for the Ni-Cr-Si structure, the growth rate is about 1 μm / min, for the Ni-V-Si structure it is 0.55 μm / min. The growth rates for the saturation region for the Ni-Cr-Si structure, the growth rate is about 0.2 μm / min, for the Ni-V-Si structure 0.16 μm / min. The results obtained in this paper can be used to optimize the growth regimes perpendicularly oriented to the substrate carbon nanotubes, which are used as various elements in modern nanoelectronics.

  20. Zinc oxyfluoride transparent conductor

    Science.gov (United States)

    Gordon, Roy G.

    1991-02-05

    Transparent, electrically conductive and infrared-reflective films of zinc oxyfluoride are produced by chemical vapor deposition from vapor mixtures of zinc, oxygen and fluorine-containing compounds. The substitution of fluorine for some of the oxygen in zinc oxide results in dramatic increases in the electrical conductivity. For example, diethyl zinc, ethyl alcohol and hexafluoropropene vapors are reacted over a glass surface at 400.degree. C. to form a visibly transparent, electrically conductive, infrared reflective and ultraviolet absorptive film of zinc oxyfluoride. Such films are useful in liquid crystal display devices, solar cells, electrochromic absorbers and reflectors, energy-conserving heat mirrors, and antistatic coatings.

  1. Voluntarism and transparent deliberation

    DEFF Research Database (Denmark)

    Steglich-Petersen, Asbjørn

    2006-01-01

    It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic voluntar......It is widely assumed that doxastic deliberation is transparent to the factual question of the truth of the proposition being considered for belief, and that this sets doxastic deliberation apart from practical deliberation. This feature is frequently invoked in arguments against doxastic...

  2. Transparent aerogel Windows

    DEFF Research Database (Denmark)

    Jensen, Karsten Ingerslev; Schultz, Jørgen Munthe

    In a recent EU FP5 project, monolithic silica aerogel was further developed with respect to the production process at pilot-scale, its properties and the application as transparent insulation material in highly insulating and transparent windows. The aerogel production process has been optimised......-value of 0.7 W/m²K for about 14 mm aerogel thickness, which for a 20 mm thickness corresponds to a U-value of approximately 0.5 W/m²K. No other known glazing exhibits such an excellent combination of solar transmittance and heat loss coefficient. At a Danish location and North facing, the energy balance...

  3. Low-cost fabrication of ternary CuInSe2 nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    Science.gov (United States)

    Chawla, Parul; Narain Sharma, Shailesh; Singh, Son

    2014-11-01

    Wet-route synthesis of CuInSe2 (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (Eg)~1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (~250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles.

  4. Simultaneous determination of volatile and non-volatile nitrosamines in processed meat products by liquid chromatography tandem mass spectrometry using atmospheric pressure chemical ionisation and electrospray ionisation

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Granby, Kit

    2014-01-01

    A sensitive, selective and generic method has been developed for the simultaneous determination of the contents (μgkg−1 range) of both volatile nitrosamines (VNA) and non-volatile nitrosamines (NVNA) in processed meat products. The extraction procedure only requires basic laboratory equipment...... NVNAs with LODs generally between 0.2 and 1μgkg−1, though for a few analyte/matrix combinations higher LODs were obtained (3 to 18μgkg−1). The validation results show that results obtained for one meat product is not always valid for other meat products. We were not able to obtain satisfactory results......, it was only possible to ionize N-nitroso-thiazolidine-4-carboxylic acid (NTCA) and N-nitroso-2-methyl-thiazolidine-4-carboxylic acid (NMTCA) by ESI. The validated method was applied for the analysis of processed meat products and contents of N-nitrosodimethylamine (NDMA), N-nitrosopyrrolidine (NPYR), N...

  5. Analysis of drugs of forensic interest with capillary zone electrophoresis/time-of-flight mass spectrometry based on the use of non-volatile buffers.

    Science.gov (United States)

    Gottardo, Rossella; Mikšík, Ivan; Aturki, Zeineb; Sorio, Daniela; Seri, Catia; Fanali, Salvatore; Tagliaro, Franco

    2012-02-01

    The present work is aimed at investigating the influence of the background electrolyte composition and concentration on the separation efficiency and resolution and mass spectrometric detection of illicit drugs in a capillary zone electrophoresis-electrospray ionization-time of flight mass spectrometry (CZE-ESI-TOF MS) system. The effect of phosphate, borate and Tris buffers on the separation and mass spectrometry response of a mixture of 3,4-methylenedioxyamphetamine, 3,4-methylenedioxymethamphetamine, methadone, cocaine, morphine, codeine and 6-monoacetylmorphine was studied, in comparison with a reference ammonium formate separation buffer. Inorganic non-volatile borate and Tris buffers proved hardly suitable for capillary electrophoresis-mass spectrometry (CE-MS) analysis, but quite unexpectedly ammonium phosphate buffers showed good separation and ionization performances for all the analytes tested. Applications of this method to real samples of hair from drug addicts are also provided. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Simultaneous Microwave Extraction and Separation of Volatile and Non-Volatile Organic Compounds of Boldo Leaves. From Lab to Industrial Scale

    Directory of Open Access Journals (Sweden)

    Loïc Petigny

    2014-04-01

    Full Text Available Microwave extraction and separation has been used to increase the concentration of the extract compared to the conventional method with the same solid/liquid ratio, reducing extraction time and separate at the same time Volatile Organic Compounds (VOC from non-Volatile Organic Compounds (NVOC of boldo leaves. As preliminary study, a response surface method has been used to optimize the extraction of soluble material and the separation of VOC from the plant in laboratory scale. The results from the statistical analysis revealed that the optimized conditions were: microwave power 200 W, extraction time 56 min and solid liquid ratio of 7.5% of plants in water. Lab scale optimized microwave method is compared to conventional distillation, and requires a power/mass ratio of 0.4 W/g of water engaged. This power/mass ratio is kept in order to upscale from lab to pilot plant.

  7. A Simultaneous Analytical Method to Profile Non-Volatile Components with Low Polarity Elucidating Differences Between Tobacco Leaves Using Atmospheric Pressure Chemical Ionization Mass Spectrometry Detection

    Directory of Open Access Journals (Sweden)

    Ishida Naoyuki

    2016-04-01

    Full Text Available A comprehensive analytical method using liquid chromatography atmospheric pressure chemical ionization mass spectrometry detector (LC/APCI-MSD was developed to determine key non-volatile components with low polarity elucidating holistic difference among tobacco leaves. Nonaqueous reversed-phase chromatography (NARPC using organic solvent ensured simultaneous separation of various components with low polarity in tobacco resin. Application of full-scan mode to APCI-MSD hyphenated with NARPC enabled simultaneous detection of numerous intense product ions given by APCI interface. Parameters for data processing to filter, feature and align peaks were adjusted in order to strike a balance between comprehensiveness and reproducibility in analysis. 63 types of components such as solanesols, chlorophylls, phytosterols, triacylglycerols, solanachromene and others were determined on total ion chromatograms according to authentic components, wavelength spectrum and mass spectrum. The whole area of identified entities among the ones detected on total ion chromatogram reached to over 60% and major entities among those identified showed favorable linearity of determination coefficient of over 0.99. The developed method and data processing procedure were therefore considered feasible for subsequent multivariate analysis. Data matrix consisting of a number of entities was then subjected to principal component analysis (PCA and hierarchical clustering analysis. Cultivars of tobacco leaves were distributed far from each cultivar on PCA score plot and each cluster seemed to be characterized by identified non-volatile components with low polarity. While fluecured Virginia (FCV was loaded by solanachromene, phytosterol esters and triacylglycerols, free phytosterols and chlorophylls loaded Burley (BLY and Oriental (ORI respectively. Consequently the whole methodology consisting of comprehensive method and data processing procedure proved useful to determine key

  8. The transparent face mask.

    Science.gov (United States)

    Rivers, E A; Strate, R G; Solem, L D

    1979-02-01

    Fabrication of an accurate transparent mask for total contact pressure to the healed burned face proved helpful in controlling scarring. Wearing the mask for 20 hours daily, secured by elastic straps giving 35-mmHG pressure to the scar, can prevent the original facial contours from being distorted by contracting scar tissue.

  9. Peering into Transparency

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger; Cheney, George

    The current emphasis on organizational and institutional transparency – driven by NGOs, inquisitive media, critical investors and other engaged stakeholders – signifies a growing demand for insight, clarity, participation and democracy. Holding the promise of improved access to valid and trustwor...

  10. Transparency for international trade

    Science.gov (United States)

    K. R. Lakin; G. A. Fowler; W. D. Bailey; J. Cavey; P. Lehtonen

    2003-01-01

    U.S. Department of Agriculture - Animal and Plant Health Inspection Service - Plant Protection and Quarantine (USDA-APHIS-PPQ) has developed a Regulated Plant Pest List (RPPL). This provides trading partners with an official list of plant pests of concern to the U.S., along with providing greater transparency of Agency actions.

  11. The Causes of Fiscal Transparency

    DEFF Research Database (Denmark)

    Alt, James E.; Lassen, David Dreyer; Rose, Shanna

    We use unique panel data on the evolution of transparent budget procedures in the American states over the past three decades to explore the political and economic determinants of fiscal transparency. Our case studies and quantitative analysis suggest that both politics and fiscal policy outcomes...... influence the level of transparency. More equal political competition and power sharing are associated with both greater levels of fiscal transparency and increases in fiscal transparency during the sample period. Political polarization and past fiscal conditions, in particular state government debt...... and budget imbalance, also appear to affect the level of transparency...

  12. Certificate Transparency with Privacy

    Directory of Open Access Journals (Sweden)

    Eskandarian Saba

    2017-10-01

    Full Text Available Certificate transparency (CT is an elegant mechanism designed to detect when a certificate authority (CA has issued a certificate incorrectly. Many CAs now support CT and it is being actively deployed in browsers. However, a number of privacy-related challenges remain. In this paper we propose practical solutions to two issues. First, we develop a mechanism that enables web browsers to audit a CT log without violating user privacy. Second, we extend CT to support non-public subdomains.

  13. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi

    2016-11-23

    Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

  14. The Transparency-Power Nexus

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel; Christensen, Lars Thøger; Krause Hansen, Hans

    Transparency has emerged as a mainstay in the quest for more accountable and sustainable forms of organization and governance. This paper problematizes widespread assumptions about the virtues and downsides of transparency, including simplified notions of insight, control and surveillance. We argue...... that practices and ideals of organizational transparency are essentially ambiguous and work not merely as extensions of control or solutions to problems of power, but must be understood as sources of power and control in and off themselves. The paper offers an analytics of what we call “the transparency...... control and emergent understandings of the productive power of transparency....

  15. Search for Non-Volatile Components with Low Polarity Characterizing Tobacco Leaves Using Liquid Chromatography / Atmospheric Pressure Chemical Ionization Mass Spectrometry Detector

    Directory of Open Access Journals (Sweden)

    Ishida Naoyuki

    2015-06-01

    Full Text Available Alors que les regards se sont principalement tournés sur les composants à faible polarité dans la résine de feuilles de tabac en raison de leur lien probable avec le goût et l’arôme des produits du tabac, l’absence d’une méthode praticable et d’un outil analytique a longtemps fait obstacle à l’identification des composants non-volatils à faible polarité. L’auteur a, en l’occurrence, porté son attention sur l’analyse recourant à la chromatographie en phase inverse non aqueuse couplée à un détecteur à barrettes de photodiodes et à un détecteur de spectrométrie de masse par ionisation chimique à pression atmosphérique. Cette analyse fut considérée applicable à la séparation des composants nonvolatils significatifs mais inconnus. Son application a permis, avec succès, de séparer, détecter et quantifier simultanément plus de 100 composants non-volatils présentant des polarités faibles et différenciées. Ces composantes furent, entre autres, des solanésols, des triacylglycérides, des phytostérols et des chlorophylles. Cependant, les données concernant les différences de composition parmi les diverses feuilles de tabac demeurent encore partielles et basées sur une analyse ciblée plutôt que globales et basées sur une analyse exhaustive. Aucune étude n’a été, à ce jour, accomplie qui recense les composants essentiels permettant de distinguer, parmi les feuilles de tabac, les différents goûts, arômes, variétés, cultivars, processus de séchage et régions de culture. Par conséquent, toutes les données de quantification ont été consolidées dans le but de former une matrice multidimensionnelle complète et ont subi un traitement statistique qui a mis en exergue les catégories et les composants-clés des diverses feuilles de tabac grâce à une analyse en composantes principales et une classification hiérarchique. Les feuilles de tabac ont, dans un premier temps, été ventilées en

  16. Transparency of Computational Intelligence Models

    Science.gov (United States)

    Owotoki, Peter; Mayer-Lindenberg, Friedrich

    This paper introduces the behaviour of transparency of computational intelligence (CI) models. Transparency reveals to end users the underlying reasoning process of the agent embodying CI models. This is of great benefit in applications (e.g. data mining, entertainment and personal robotics) with humans as end users because it increases their trust in the decisions of the agent and their acceptance of its results. Our integrated approach, wherein rules are just one of other transparency factors (TF), differs from previous related efforts which have focused mostly on generation of comprehensible rules as explanations. Other TF include degree of confidence measure and visualization of principal features. The transparency quotient is introduced as a measure of the transparency of models based on these factors. The transparency enabled generalized exemplar model has been developed to demonstrate the TF and transparency concepts introduced in this paper.

  17. Flash memories economic principles of performance, cost and reliability optimization

    CERN Document Server

    Richter, Detlev

    2014-01-01

    The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.   Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based pr...

  18. Between Transparency and Censorship

    DEFF Research Database (Denmark)

    Uldam, Julie; Krause Hansen, Hans

    Internet technologies have been celebrated for their potential to help civil society actors expose discrepancies between companies’ words and practices (Bennett, 2005). Recent reporting on dangerous and unethical business practices gestures towards an increased visibility of corporations vis...... on the extractive industries and draws on the case of the Extractive Industries Transparency Initiative (EITI) and examples of oil companies’ surveillance of individual activists’ online communication. We draw on media theory, on theories of hidden organizing and theories of post-political regulation to discuss...

  19. Adaptive transparent film dressings.

    Science.gov (United States)

    Dabi, S; Haddock, T; Hill, A S

    1994-07-01

    Transparent film dressings have many of the attributes of the ideal wound dressing. However, currently available film dressings are deficient in their ability to handle varying levels of wound exudate. The permeability of polymeric films to water vapor is discussed and techniques are described to produce films in which the moisture vapor permeability is a function of the moisture in the environment. Illustrations are provided showing the variation of permeability with relative humidity and water contact. The unique properties of coextruded films are illustrated and the responsiveness of such a film dressing to varying conditions at the wound are discussed.

  20. Towards energy transparent factories

    CERN Document Server

    Posselt, Gerrit

    2016-01-01

    This monograph provides a methodological approach for establishing demand-oriented levels of energy transparency of factories. The author presents a systematic indication of energy drivers and cost factors, taking into account the interdependencies between facility and production domains. Particular attention is given to energy flow metering and monitoring. Readers will also be provided with an in-depth description of a planning tool which allows for systematically deriving suitable metering points in complex factory environments. The target audience primarily comprises researchers and experts in the field of factory planning, but the book may also be beneficial for graduate students.

  1. Transparent ultraviolet photovoltaic cells.

    Science.gov (United States)

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  2. Between Transparency and Censorship

    DEFF Research Database (Denmark)

    Uldam, Julie; Krause Hansen, Hans

    -à-vis stakeholders and wider publics (Fleming and Zyglidopoulus, 2011). On closer inspection, however, this is a two-way street. In response, companies have tried to protect and repair their reputation. This paper examines two of the ways in which companies respond: (1) their participation in voluntary initiatives...... and sponsorships, typically under the heading of transparency, sustainability and corporate social responsibility (Livesey, 2001; Palazzo and Scherer, 2006) and (2) their attempts to contain activists’ attempts to unveil discrepancies between companies’ CSR discourses and practices. In doing so, it focuses...

  3. A comprehensive and comparative GC-MS metabolomics study of non-volatiles in Tanzanian grown mango, pineapple, jackfruit, baobab and tamarind fruits.

    Science.gov (United States)

    Khakimov, Bekzod; Mongi, Richard J; Sørensen, Klavs M; Ndabikunze, Bernadette K; Chove, Bernard E; Engelsen, Søren Balling

    2016-12-15

    Tropical fruits contribute significantly to the total fruit intake worldwide. However, their metabolomes have not yet been investigated comprehensively, as most previous studies revealed only volatile and bulk compositions. This study compares non-volatile metabolites of five fruits grown in Tanzania. A new methodology is developed for broad-spectrum GC-MS metabolomics in fruits using a new derivatization and a two dimensional peak deconvolution techniques. A total of 92 peaks were detected from fruits of which 45 were identified. Jackfruits contained the highest amount of carbohydrates, while baobab contained the highest amount of fatty acids. The highest content of organic acids was detected in tamarind. Principal component analysis revealed insights into metabolic differences and similarities, while hierarchical cluster analysis correctly grouped the fruits according to their relationships in plants' phylogenetic tree. The developed methodology could potentially be applied in large-scale studies on fruit quality, authenticity/variety, optimization of post-harvest processing and storage. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. Flexible transparent electrode

    Science.gov (United States)

    Demiryont, Hulya; Shannon, Kenneth C., III; Moorehead, David; Bratcher, Matthew

    2011-06-01

    This paper presents the properties of the EclipseTECTM transparent conductor. EclipseTECTM is a room temperature deposited nanostructured thin film coating system comprised of metal-oxide semiconductor elements. The system possesses metal-like conductivity and glass-like transparency in the visible region. These highly conductive TEC films exhibit high shielding efficiency (35dB at 1 to 100GHz). EclipseTECTM can be deposited on rigid or flexible substrates. For example, EclipseTECTM deposited on polyethylene terephthalate (PET) is extremely flexible that can be rolled around a 9mm diameter cylinder with little or no reduction in electrical conductivity and that can assume pre-extension states after an applied stress is relieved. The TEC is colorless and has been tailored to have high visible transmittance which matches the eye sensitivity curve and allows the viewing of true background colors through the coating. EclipseTECTM is flexible, durable and can be tailored at the interface for applications such as electron- or hole-injecting OLED electrodes as well as electrodes in flexible displays. Tunable work function and optical design flexibility also make EclipseTECTM well-suited as a candidate for grid electrode replacement in next-generation photovoltaic cells.

  5. Cosmic transparency and acceleration

    Science.gov (United States)

    Holanda, R. F. L.; Pereira, S. H.; Jain, Deepak

    2018-01-01

    In this paper, by considering an absorption probability independent of photon wavelength, we show that current type Ia supernovae (SNe Ia) and gamma-ray burst (GRB) observations plus high-redshift measurements of the cosmic microwave background (CMB) radiation temperature support cosmic acceleration regardless of the transparent-universe assumption. Two flat scenarios are considered in our analyses: the Λ CDM model and a kinematic model. We consider τ (z )=2 ln (1 +z )ɛ, where τ (z ) denotes the opacity between an observer at z =0 and a source at z . This choice is equivalent to deforming the cosmic distance duality relation as DLDA-1=(1 +z )2+ɛ and, if the absorption probability is independent of photon wavelength, the CMB temperature evolution law is TCMB(z )=T0(1 +z )1+2 ɛ /3. By marginalizing on the ɛ parameter, our analyses rule out a decelerating universe at 99.99% C.L. for all scenarios considered. Interestingly, by considering only SNe Ia and GRBs observations, we obtain that a decelerated universe—indicated by ΩΛ≤0.33 and q0>0 —is ruled out around 1.5 σ C.L. and 2 σ C.L., respectively, regardless of the transparent-universe assumption.

  6. Positron annihilation in transparent ceramics

    International Nuclear Information System (INIS)

    Husband, P; Selim, F A; Bartošová, I; Slugeň, V

    2016-01-01

    Transparent ceramics are emerging as excellent candidates for many photonic applications including laser, scintillation and illumination. However achieving perfect transparency is essential in these applications and requires high technology processing and complete understanding for the ceramic microstructure and its effect on the optical properties. Positron annihilation spectroscopy (PAS) is the perfect tool to study porosity and defects. It has been applied to investigate many ceramic structures; and transparent ceramics field may be greatly advanced by applying PAS. In this work positron lifetime (PLT) measurements were carried out in parallel with optical studies on yttrium aluminum garnet transparent ceramics in order to gain an understanding for their structure at the atomic level and its effect on the transparency and light scattering. The study confirmed that PAS can provide useful information on their microstructure and guide the technology of manufacturing and advancing transparent ceramics. (paper)

  7. Transparent Electrodes for Efficient Optoelectronics

    KAUST Repository

    Morales-Masis, Monica

    2017-03-30

    With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano- and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light-emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

  8. Transparency and Costly Information Acquisition

    OpenAIRE

    Ryan A Chahrour

    2011-01-01

    I study the choice of economic transparency in a heterogeneous-information model where agents must pay a cost to observe the announcements of an information authority. The authority chooses transparency by selecting the number of signals regarding an aggregate state to make public, and agents respond by choosing how many of those signals to observe. I show that, when agents seek to coordinate their actions, the amount of information actually gathered by agents is non-monotonic in the transpar...

  9. Transparency in International Financial Institutions

    OpenAIRE

    Hinojosa-Mart??nez, Luis M.

    2013-01-01

    This work provides a comparative analysis of international financial institutions??? transparency policies and denounces their shortcomings and excessive prudence, and in the case of less formal cooperation bodies (such as the G-20 or the Financial Stability Board), the lack of attention to basic transparency concerns. The study shows that a higher degree of institutionalization calls for a more coherent and open transparency policy, as more structured institutions have at their disposal the ...

  10. Transparent lithium-ion batteries

    KAUST Repository

    Yang, Y.

    2011-07-25

    Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh/L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries.

  11. Canadian perspectives in evaluating transparency

    International Nuclear Information System (INIS)

    Herwig, L.

    2007-01-01

    The Canadian Nuclear Safety Commission's mission is to regulate the use of nuclear energy and materials to protect the health, safety, and security of Canadians and the environment, as well as to respect Canada's international commitments on the peaceful use of nuclear energy. In 2001, the CNSC established a vision to be one of the best nuclear regulators in the world and established four strategic priorities of effectiveness, transparency, excellence in staff, and efficiency. While fulfilling a very comprehensive mandate, the CNSC operates with a. very clear vision of its clientele - the Canadian people. That commitment guides every employee and every action of the CNSC and ensures a firm commitment to transparency. The presentation will begin with a brief overview of the worldwide context of transparency and transparency measurement, with a look at what lessons can be learned from other organizations and initiatives. It will look broadly at the Canadian context and the government framework that establishes transparency, including the keystone legislation of the Access to Information Act. The presentation will then focus on the Canadian Nuclear Safety Commission. The CNSC is firmly committed to putting additional measures in place to ensure transparency, which is being done concurrently with an overall organisational performance measurement system. It is within this framework that the presentation will address the transparency efforts at the CNSC as well transparency measurement activities. And, finally, the presentation will look at future directions for transparency and its measurement at the CNSC. (author)

  12. Transparency and control

    International Nuclear Information System (INIS)

    2001-01-01

    After having outlined some lessons learnt after the Chernobyl accident, notably the facts that risk assessment and management were not separated, that radioactivity measurements have suffered from a lack of means and of preparedness, and that there has been few information exchanged between the different concerned countries, this document presents the four international conventions which have been negotiated after this accident (they concern the notification, assistance, safety, safety of fuel management and of radioactive wastes). It discusses the lessons learnt in France, the credibility of information and the confidence in authorities, the evolution of transparency and information in France and in the rest of the World, the transposition of the Arhus Convention in the communautary and national law, the innovating European approaches, and the evolutions in France

  13. Plasmonic graphene transparent conductors.

    Science.gov (United States)

    Xu, Guowei; Liu, Jianwei; Wang, Qian; Hui, Rongqing; Chen, Zhijun; Maroni, Victor A; Wu, Judy

    2012-03-08

    Plasmonic graphene is fabricated using thermally assisted self-assembly of silver nanoparticles on graphene. The localized surface-plasmonic effect is demonstrated with the resonance frequency shifting from 446 to 495 nm when the lateral dimension of the Ag nanoparticles increases from about 50 to 150 nm. Finite-difference time-domain simulations are employed to confirm the experimentally observed light-scattering enhancement in the solar spectrum in plasmonic graphene and the decrease of both the plasmonic resonance frequency and amplitude with increasing graphene thickness. In addition, plasmonic graphene shows much-improved electrical conductance by a factor of 2-4 as compared to the original graphene, making the plasmonic graphene a promising advanced transparent conductor with enhanced light scattering for thin-film optoelectronic devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

    Science.gov (United States)

    MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

    2011-01-01

    NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

  15. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes.

    Science.gov (United States)

    Ghittorelli, Matteo; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W M; Kovács-Vajna, Zsolt M; de Leeuw, Dago M; Torricelli, Fabrizio

    2017-06-12

    Non-volatile memories-providing the information storage functionality-are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 10 12  bit cm -2 .

  16. Prediction of the wash-off of traffic related semi- and non-volatile organic compounds from urban roads under climate change influenced rainfall characteristics.

    Science.gov (United States)

    Mahbub, Parvez; Goonetilleke, Ashantha; Ayoko, Godwin A

    2012-04-30

    Traffic generated semi- and non-volatile organic compounds (SVOCs and NVOCs) pose a serious threat to human and ecosystem health when washed off into receiving water bodies by stormwater. Climate change influenced rainfall characteristics makes the estimation of these pollutants in stormwater quite complex. The research study discussed in the paper developed a prediction framework for such pollutants under the dynamic influence of climate change on rainfall characteristics. It was established through principal component analysis (PCA) that the intensity and durations of low to moderate rain events induced by climate change mainly affect the wash-off of SVOCs and NVOCs from urban roads. The study outcomes were able to overcome the limitations of stringent laboratory preparation of calibration matrices by extracting uncorrelated underlying factors in the data matrices through systematic application of PCA and factor analysis (FA). Based on the initial findings from PCA and FA, the framework incorporated orthogonal rotatable central composite experimental design to set up calibration matrices and partial least square regression to identify significant variables in predicting the target SVOCs and NVOCs in four particulate fractions ranging from >300 to 1 μm and one dissolved fraction of 300-1 μm range, similar distributions of predicted and observed concentrations of the target compounds from minimum to 75th percentile were achieved. The inter-event coefficient of variations for particulate fractions of >300-1 μm was 5-25%. The limited solubility of the target compounds in stormwater restricted the predictive capacity of the proposed method for the dissolved fraction of <1 μm. Copyright © 2012 Elsevier B.V. All rights reserved.

  17. Foliar Essential Oil Glands of Eucalyptus Subgenus Eucalyptus (Myrtaceae Are a Rich Source of Flavonoids and Related Non-Volatile Constituents.

    Directory of Open Access Journals (Sweden)

    Jason Q D Goodger

    Full Text Available The sub-dermal secretory cavities (glands embedded within the leaves of Eucalyptus (Myrtaceae were once thought to be the exclusive repositories of monoterpene and sesquiterpene oils. Recent research has debunked this theory and shown that abundant non-volatile compounds also occur within foliar glands. In particular, glands of four species in subgenus Eucalyptus contain the biologically active flavanone pinocembrin. Pinocembrin shows great promise as a pharmaceutical and is predominantly plant-sourced, so Eucalyptus could be a potential commercial source of such compounds. To explore this we quantified and assessed the purity of pinocembrin in glands of 11 species of E. subg. Eucalyptus using Electro-Spray Ionisation Liquid Chromatography Mass Spectrometry of acetonitrile extracts and Gas Chromatography Mass Spectrometry analyses of hexane extracts of isolated glands which were free from other leaf tissues. Our results showed that the glands of subgenus Eucalyptus contain numerous flavanones that are structurally related to pinocembrin and often present in much greater abundance. The maximum concentration of pinocembrin was 2 mg g-1 dry leaf found in E. stellulata, whereas that of dimethylpinocembrin (5,7-dimethoxyflavanone was 10 mg g-1 in E. oreades and that of pinostrobin (5-hydroxy-7-methoxyflavanone was 12 mg g-1 in E. nitida. We also found that the flavanones are exclusively located within the foliar glands rather than distributed throughout leaf tissues. The flavanones differ from the non-methylated pinocembrin in the degree and positions of methylation. This finding is particularly important given the attractiveness of methylated flavonoids as pharmaceuticals and therapeutics. Another important finding was that glands of some members of the subgenus also contain flavanone O-glucosides and flavanone-β-triketone conjugates. In addition, glands contain free β-triketones, β-triketone heterodimers and chromone C-glucosides. Therefore, the

  18. Foliar Essential Oil Glands of Eucalyptus Subgenus Eucalyptus (Myrtaceae) Are a Rich Source of Flavonoids and Related Non-Volatile Constituents

    Science.gov (United States)

    Nicolle, Dean; Woodrow, Ian E.

    2016-01-01

    The sub-dermal secretory cavities (glands) embedded within the leaves of Eucalyptus (Myrtaceae) were once thought to be the exclusive repositories of monoterpene and sesquiterpene oils. Recent research has debunked this theory and shown that abundant non-volatile compounds also occur within foliar glands. In particular, glands of four species in subgenus Eucalyptus contain the biologically active flavanone pinocembrin. Pinocembrin shows great promise as a pharmaceutical and is predominantly plant-sourced, so Eucalyptus could be a potential commercial source of such compounds. To explore this we quantified and assessed the purity of pinocembrin in glands of 11 species of E. subg. Eucalyptus using Electro-Spray Ionisation Liquid Chromatography Mass Spectrometry of acetonitrile extracts and Gas Chromatography Mass Spectrometry analyses of hexane extracts of isolated glands which were free from other leaf tissues. Our results showed that the glands of subgenus Eucalyptus contain numerous flavanones that are structurally related to pinocembrin and often present in much greater abundance. The maximum concentration of pinocembrin was 2 mg g-1 dry leaf found in E. stellulata, whereas that of dimethylpinocembrin (5,7-dimethoxyflavanone) was 10 mg g-1 in E. oreades and that of pinostrobin (5-hydroxy-7-methoxyflavanone) was 12 mg g-1 in E. nitida. We also found that the flavanones are exclusively located within the foliar glands rather than distributed throughout leaf tissues. The flavanones differ from the non-methylated pinocembrin in the degree and positions of methylation. This finding is particularly important given the attractiveness of methylated flavonoids as pharmaceuticals and therapeutics. Another important finding was that glands of some members of the subgenus also contain flavanone O-glucosides and flavanone-β-triketone conjugates. In addition, glands contain free β-triketones, β-triketone heterodimers and chromone C-glucosides. Therefore, the foliar glands

  19. Foliar Essential Oil Glands of Eucalyptus Subgenus Eucalyptus (Myrtaceae) Are a Rich Source of Flavonoids and Related Non-Volatile Constituents.

    Science.gov (United States)

    Goodger, Jason Q D; Seneratne, Samiddhi L; Nicolle, Dean; Woodrow, Ian E

    2016-01-01

    The sub-dermal secretory cavities (glands) embedded within the leaves of Eucalyptus (Myrtaceae) were once thought to be the exclusive repositories of monoterpene and sesquiterpene oils. Recent research has debunked this theory and shown that abundant non-volatile compounds also occur within foliar glands. In particular, glands of four species in subgenus Eucalyptus contain the biologically active flavanone pinocembrin. Pinocembrin shows great promise as a pharmaceutical and is predominantly plant-sourced, so Eucalyptus could be a potential commercial source of such compounds. To explore this we quantified and assessed the purity of pinocembrin in glands of 11 species of E. subg. Eucalyptus using Electro-Spray Ionisation Liquid Chromatography Mass Spectrometry of acetonitrile extracts and Gas Chromatography Mass Spectrometry analyses of hexane extracts of isolated glands which were free from other leaf tissues. Our results showed that the glands of subgenus Eucalyptus contain numerous flavanones that are structurally related to pinocembrin and often present in much greater abundance. The maximum concentration of pinocembrin was 2 mg g-1 dry leaf found in E. stellulata, whereas that of dimethylpinocembrin (5,7-dimethoxyflavanone) was 10 mg g-1 in E. oreades and that of pinostrobin (5-hydroxy-7-methoxyflavanone) was 12 mg g-1 in E. nitida. We also found that the flavanones are exclusively located within the foliar glands rather than distributed throughout leaf tissues. The flavanones differ from the non-methylated pinocembrin in the degree and positions of methylation. This finding is particularly important given the attractiveness of methylated flavonoids as pharmaceuticals and therapeutics. Another important finding was that glands of some members of the subgenus also contain flavanone O-glucosides and flavanone-β-triketone conjugates. In addition, glands contain free β-triketones, β-triketone heterodimers and chromone C-glucosides. Therefore, the foliar glands

  20. Detection of an organic-non volatile compound in variable-contaminated volcanic soil samples via Time Domain Reflectometry (TDR) technique: Preliminary results

    Science.gov (United States)

    comegna, alessandro; coppola, antonio; dragonetti, giovanna; chaali, nesrine; sommella, angelo

    2014-05-01

    Hydrocarbons may be present in soils as non-aqueous phase liquids (NAPLs), which means that these organic compounds, exist as a separate and immiscible phase with respect to water and air commonly present in the soil. NAPLs, which can be accidentally introduced in the environment (for example by waste disposal sites, industrial spills, gasoline stations, etc), constitutes a serious geo-environmental problem, given the toxicity level and the high mobility. Time domain reflectometry (TDR) has became, over several decades, an important technique for water estimation in soils. In order to expand the potentiality of the TDR technique, the main objective of this study is to explore the capacity of dielectric response to detect the presence of NAPLs in volcanic soils. In laboratory, soil samples were oven dried at 105° C and passed through a 2 mm sieve. Known quantities of soil, water and NAPL (corn oil, a non-volatile and non-toxic organic compound) were mixed and repacked into plastic cylinders (16 cm high and 9.5 cm in diameter); in order to obtain forty different volumetric combinations of water and oil (i.e. θfg = θwater + θNAPL), with θNAPL varying from 0.05 to 0.40 by 0.05 cm3/cm3 increments. Data collected were employed to implement a multiphase mixing model which permitted conversion from a dielectric permittivity domain into a θf domain and vice versa. The results of this study show that, the TDR device is NAPL-sensitive, especially for θf values greater than 0.20. Further works will be built on this initial study, concentrating on improving the dielectric response-database, in order to: i) enhancing the model efficiency in terms of NAPL capability detention, and ii) validating the developed TDR interpretation tool with field results.

  1. Optically Transparent Nanoporous Glasspolymer Composites

    National Research Council Canada - National Science Library

    O'Brien, D. J; Juliano, T. F; Patel, P. J; McKnight, S. H

    2006-01-01

    .... This transparent nanocomposite is created by infiltrating nanoporous glass (Vycor, Corning Inc.) with different polymers. The Vycor pores (4-6 nm) are much smaller than the wavelength of light, thus refractive index matching with the polymer is not necessary for transparency.

  2. Transparency and value chain sustainability

    NARCIS (Netherlands)

    Mol, A.P.J.

    2015-01-01

    The rise of transparency on the public and political agendas is not an accident or fad, soon to be replaced by another timely topic in sustainability politics and governance. Transparency will remain a key topic in global value chains and will further develop as it piggy-backs on wider social

  3. Nanocellulose reinforcement of Transparent Composites

    Science.gov (United States)

    Joshua Steele; Hong Dong; James F. Snyder; Josh A. Orlicki; Richard S. Reiner; Alan W. Rudie

    2012-01-01

    In this work, we evaluate the impact of nanocellulose reinforcement on transparent composite properties. Due to the small diameter, high modulus, and high strength of cellulose nanocrystals, transparent composites that utilize these materials should show improvement in bulk mechanical performances without a corresponding reduction in optical properties. In this study...

  4. Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

    International Nuclear Information System (INIS)

    Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

    2008-01-01

    We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

  5. Solution-processed flexible NiO resistive random access memory device

    Science.gov (United States)

    Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

    2018-04-01

    Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

  6. Silicon nanowire charge-trap memory incorporating self-assembled iron oxide quantum dots.

    Science.gov (United States)

    Huang, Ruo-Gu; Heath, James R

    2012-11-19

    Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift the transistor threshold voltages, providing the basis for a memory device. Quantum dot size is found to strongly influence memory performance metrics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  8. Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

    Directory of Open Access Journals (Sweden)

    Luís Vitório Cargnini

    2014-08-01

    Full Text Available Static random access memory (SRAM is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM is a candidate technology to replace SRAM, assuming appropriate dimensioning given an operating threshold voltage. The write current of spin transfer torque (STT-MRAM is a known limitation; however, this has been recently mitigated by leveraging perpendicular magnetic tunneling junctions. In this article, we present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off policies and leakage current optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of embedded systems, due to the higher densities and reduced leakage of MRAM.We demonstrate that adopting STT-MRAM in L1 and L2 caches mitigates the impact of higher write latencies and increased current draw due to the use of MRAM. With the correct system-on-chip (SoC design, we believe that STT-MRAM is a viable alternative to SRAM, which minimizes leakage current and the total power consumed by the SoC.

  9. Air transparent soundproof window

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang-Hoon, E-mail: shkim@mmu.ac.kr [Division of Marine Engineering, Mokpo National Maritime University, Mokpo 530-729, R. O. Korea (Korea, Republic of); Lee, Seong-Hyun [Korea Institute of Machinery and Materials, Yuseong-Gu, Daejeon 305-343, R. O. Korea (Korea, Republic of)

    2014-11-15

    A soundproof window or wall which is transparent to airflow is presented. The design is based on two wave theories: the theory of diffraction and the theory of acoustic metamaterials. It consists of a three-dimensional array of strong diffraction-type resonators with many holes centered on each individual resonator. The negative effective bulk modulus of the resonators produces evanescent wave, and at the same time the air holes with subwavelength diameter existed on the surfaces of the window for macroscopic air ventilation. The acoustic performance levels of two soundproof windows with air holes of 20mm and 50mm diameters were measured. The sound level was reduced by about 30 - 35dB in the frequency range of 400 - 5,000Hz with the 20mm window, and by about 20 - 35dB in the frequency range of 700 - 2,200Hz with the 50mm window. Multi stop-band was created by the multi-layers of the window. The attenuation length or the thickness of the window was limited by background noise. The effectiveness of the soundproof window with airflow was demonstrated by a real installation.

  10. Air transparent soundproof window

    Directory of Open Access Journals (Sweden)

    Sang-Hoon Kim

    2014-11-01

    Full Text Available A soundproof window or wall which is transparent to airflow is presented. The design is based on two wave theories: the theory of diffraction and the theory of acoustic metamaterials. It consists of a three-dimensional array of strong diffraction-type resonators with many holes centered on each individual resonator. The negative effective bulk modulus of the resonators produces evanescent wave, and at the same time the air holes with subwavelength diameter existed on the surfaces of the window for macroscopic air ventilation. The acoustic performance levels of two soundproof windows with air holes of 20mm and 50mm diameters were measured. The sound level was reduced by about 30 - 35dB in the frequency range of 400 - 5,000Hz with the 20mm window, and by about 20 - 35dB in the frequency range of 700 - 2,200Hz with the 50mm window. Multi stop-band was created by the multi-layers of the window. The attenuation length or the thickness of the window was limited by background noise. The effectiveness of the soundproof window with airflow was demonstrated by a real installation.

  11. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  12. Transparency masters for mathematics revealed

    CERN Document Server

    Berman, Elizabeth

    1980-01-01

    Transparency Masters for Mathematics Revealed focuses on master diagrams that can be used for transparencies for an overhead projector or duplicator masters for worksheets. The book offers information on a compilation of master diagrams prepared by John R. Stafford, Jr., audiovisual supervisor at the University of Missouri at Kansas City. Some of the transparencies are designed to be shown horizontally. The initial three masters are number lines and grids that can be used in a mathematics course, while the others are adaptations of text figures which are slightly altered in some instances. The

  13. Optical quantum memory

    Science.gov (United States)

    Lvovsky, Alexander I.; Sanders, Barry C.; Tittel, Wolfgang

    2009-12-01

    Quantum memory is essential for the development of many devices in quantum information processing, including a synchronization tool that matches various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a mechanism to convert heralded photons to on-demand photons. In addition to quantum computing, quantum memory will be instrumental for implementing long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied, such as optical delay lines, cavities and electromagnetically induced transparency, as well as schemes that rely on photon echoes and the off-resonant Faraday interaction. Here, we report on state-of-the-art developments in the field of optical quantum memory, establish criteria for successful quantum memory and detail current performance levels.

  14. Transparent Conductive Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-22

    The objectives of this program between UT-Battelle, LLC (the ''Contractor'') and (Battelle Memorial Institute) (the "Participant") were directed towards achieving significant improvement: in the electrical conductivity and optical/infrared transmission of single-wall carbon nanotube (SWNT)-based composite materials. These materials will be used in coating applications that range from aircraft canopies to display applications. The goal of the project was to obtain supported mats of SWNTs with sheet conductivities approaching 10 ohms/square combined with high optical transmission (>85% transmission at 550 nm), thereby permitting their application as a replacement for indium tin oxide (ITO) in a variety of applications such as flexible displays.

  15. A GPU accelerated PDF transparency engine

    Science.gov (United States)

    Recker, John; Lin, I.-Jong; Tastl, Ingeborg

    2011-01-01

    As commercial printing presses become faster, cheaper and more efficient, so too must the Raster Image Processors (RIP) that prepare data for them to print. Digital press RIPs, however, have been challenged to on the one hand meet the ever increasing print performance of the latest digital presses, and on the other hand process increasingly complex documents with transparent layers and embedded ICC profiles. This paper explores the challenges encountered when implementing a GPU accelerated driver for the open source Ghostscript Adobe PostScript and PDF language interpreter targeted at accelerating PDF transparency for high speed commercial presses. It further describes our solution, including an image memory manager for tiling input and output images and documents, a PDF compatible multiple image layer blending engine, and a GPU accelerated ICC v4 compatible color transformation engine. The result, we believe, is the foundation for a scalable, efficient, distributed RIP system that can meet current and future RIP requirements for a wide range of commercial digital presses.

  16. Transparent conductive graphene textile fibers

    Science.gov (United States)

    Neves, A. I. S.; Bointon, T. H.; Melo, L. V.; Russo, S.; de Schrijver, I.; Craciun, M. F.; Alves, H.

    2015-05-01

    Transparent and flexible electrodes are widely used on a variety of substrates such as plastics and glass. Yet, to date, transparent electrodes on a textile substrate have not been explored. The exceptional electrical, mechanical and optical properties of monolayer graphene make it highly attractive as a transparent electrode for applications in wearable electronics. Here, we report the transfer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers commonly used by the textile industry. The graphene-coated fibers have a sheet resistance as low as ~1 kΩ per square, an equivalent value to the one obtained by the same transfer process onto a Si substrate, with a reduction of only 2.3 per cent in optical transparency while keeping high stability under mechanical stress. With this approach, we successfully achieved the first example of a textile electrode, flexible and truly embedded in a yarn.

  17. Transparency in Cooperative Online Education

    DEFF Research Database (Denmark)

    Dalsgaard, Christian; Paulsen, Morten Flate

    2009-01-01

    The purpose of this article is to discuss the following question: What is the potential of social networking within cooperative online education? Social networking does not necessarily involve communication, dialogue, or collaboration. Instead, the authors argue that transparency is a unique...... feature of social networking services. Transparency gives students insight into each other’s actions. Cooperative learning seeks to develop virtual learning environments that allow students to have optimal individual freedom within online learning communities. This article demonstrates how cooperative...... learning can be supported by transparency. To illustrate this with current examples, the article presents NKI Distance Education’s surveys and experiences with cooperative learning. The article discusses by which means social networking and transparency may be utilized within cooperative online education...

  18. Transparency of Environmental Computer Models

    NARCIS (Netherlands)

    Vos, de M.G.; Top, J.L.; van Hage, W.R.; Schreiber, A.Th.

    2013-01-01

    Environmental computer models are considered essential tools in supporting environmental decision making, but their main value is that they allow a better understanding of our complex environment. Despite numerous attempts to promote good modelling practice, transparency of current environmental

  19. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  20. Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

    Science.gov (United States)

    Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

    2012-07-03

    Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Lines that induce phenomenal transparency.

    Science.gov (United States)

    Grieco, Alba; Roncato, Sergio

    2005-01-01

    Three neighbouring opaque surfaces may appear split into two layers, one transparent and one opaque beneath, if an outline contour is drawn that encompasses two of them. The phenomenon was originally observed by Kanizsa [1955 Rivista di Psicologia 69 3-19; 1979 Organization in Vision: Essays on Gestalt Psychology (New York: Praeger)], for the case where an outline contour is drawn to encompass one of the two parts of a bicoloured figure and a portion of a background of lightest (or darkest) luminance. Preliminary observations revealed that the outline contour yields different effects: in addition to the stratification into layers described by Kanizsa, a second split, opposite in depth order, may occur when the outline contour is close in luminance to one of the three surfaces. An initial experiment was designed to investigate what conditions give rise to the two phenomenal transparencies: this led to the conclusion that an outline contour superimposed on an opaque surface causes this surface to emerge as a transparent layer when the luminances of the contour and the surface differ, in absolute value, by no more than 13.2 cd m(-2). We have named this phenomenon 'transparency of the intercepted surface', to distinguish it from the phenomenal transparency arising when the contour and surface are very different in luminance. When such a difference exists, the contour acts as a factor of surface definition and grouping: the portion of the homogeneous surface it bounds emerges as a fourth surface and groups with a nearby surface if there is one close in luminance. The transparency phenomena ('transparency of the contoured surface') perceived in this context conform to the constraints of Metelli's model, as demonstrated by a second experiment, designed to gather 'opacity' ratings of stimuli. The observer judgments conformed to the values predicted by Metelli's formula for perceived degree of transparency, alpha. The role of the outline contour in conveying figural and

  2. Lower Bounds in the Asymmetric External Memory Model

    DEFF Research Database (Denmark)

    Jacob, Riko; Sitchinava, Nodari

    2017-01-01

    Motivated by the asymmetric read and write costs of emerging non-volatile memory technologies, we study lower bounds for the problems of sorting, permuting and multiplying a sparse matrix by a dense vector in the asymmetric external memory model (AEM). Given an AEM with internal (symmetric) memory...... of size M, transfers between symmetric and asymmetric memory in blocks of size B and the ratio ω between write and read costs, we show Ω(min (N, ωN/B logω M/B N/B) lower bound for the cost of permuting N input elements. This lower bound also applies to the problem of sorting N elements. This proves...

  3. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  4. Lignin-Retaining Transparent Wood.

    Science.gov (United States)

    Li, Yuanyuan; Fu, Qiliang; Rojas, Ramiro; Yan, Min; Lawoko, Martin; Berglund, Lars

    2017-09-11

    Optically transparent wood, combining optical and mechanical performance, is an emerging new material for light-transmitting structures in buildings with the aim of reducing energy consumption. One of the main obstacles for transparent wood fabrication is delignification, where around 30 wt % of wood tissue is removed to reduce light absorption and refractive index mismatch. This step is time consuming and not environmentally benign. Moreover, lignin removal weakens the wood structure, limiting the fabrication of large structures. A green and industrially feasible method has now been developed to prepare transparent wood. Up to 80 wt % of lignin is preserved, leading to a stronger wood template compared to the delignified alternative. After polymer infiltration, a high-lignin-content transparent wood with transmittance of 83 %, haze of 75 %, thermal conductivity of 0.23 W mK -1 , and work-tofracture of 1.2 MJ m -3 (a magnitude higher than glass) was obtained. This transparent wood preparation method is efficient and applicable to various wood species. The transparent wood obtained shows potential for application in energy-saving buildings. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  5. A Concise Dictionary of Transparency

    Directory of Open Access Journals (Sweden)

    Jakub Misun

    2013-01-01

    Full Text Available The article discusses an essay collection by Marek Bieńczyk, Przeźroczystość [Transparency]. The concept, placed in various context, shows various aspects and is seen in various shades. The author does not put forward a statement, but rather proposes a work to be done: to determine the modality of transparency. The concept initially seems to be mainly epistemological: the cognizant subject would like to make the world transparent, to discover all possible mysteries. Before that, however, the subject must know itself, and here the dream of trans­parency also plays the key role. Lack of epistemological transparency is the main cause of melancholy and its reverse — hysteria. The concept turns out to be important in the domain of love — the loer thinks that (she knows the desired person more better anybody else, that (she has entirely penetrated the subjectivity of the Other. Ultimately, however, the dream of transparency goes down to a slow demise of the subject: as self-discovery progresses, there is less and less of the discoverer. In conclusion of this work, the border of modality of the concept turns out to be horrifyingly obvious. The desire for transparency consequently searches not for knowledge, but for an escape whose name is death.

  6. Optical memory

    Science.gov (United States)

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  7. Study of transparence variations in bismuth germanate (BGO) and crystal electric conductibility

    International Nuclear Information System (INIS)

    Bermond, M.; Bottollier-Depois, J.F.; Massonnet, L.

    1983-12-01

    Transparency is studied at 480 nm with a laser beam. Longitudinal and transversal transmission, transparence variations with laser exposure time (showing a memory effect), absorption coefficient, excitation and fluorescence spectra are investigated. At 480 nm the resistivity of the crystal in an electric field of 2800 V/cm varies linearly with the intensity of a laser beam perpendicular to the electric field and is strongly temperature dependent. The fluorescence spectra show a maximum at 310 nm [fr

  8. Interaction between social influence and payoff transparency.

    Science.gov (United States)

    Zhou, Xinyue; Xie, Wenwen; Ye, Maolin

    2014-02-01

    Social influence and payoff transparency interact with each other to influence decision making. Social influence masks payoff transparency, and lacking transparency drives people to seek social influence. Moreover, our survey supports our claim by showing that social influence and payoff transparency correlate with each other (r(53) = -.71). Bentley et al.'s model can be revised to accommodate the covariance.

  9. Categories and Dimensions of Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    , an approach which remains underexplored. Finally, we discuss some avenues for future studies of the organizing properties of transparency: the secrecy-transparency interplay, the power-transparency nexus and the transparency ‘family tree’ (i.e., intersections between multiple forms of disclosure)....

  10. 78 FR 14149 - 2012 Fiscal Transparency Report

    Science.gov (United States)

    2013-03-04

    ... DEPARTMENT OF STATE [Public Notice 8213] 2012 Fiscal Transparency Report AGENCY: Department of... Fiscal Transparency review process in its first annual Fiscal Transparency Report. This report describes... the standard. FY 2012 Fiscal Transparency Report The Department of State hereby presents the findings...

  11. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    Science.gov (United States)

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-01-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

  12. Improved characteristics of Gd 2O 3 nanocrystal memory with substrate high-low junction

    Science.gov (United States)

    Wang, Jer-Chyi; Lin, Chih-Ting; Lai, Chao-Sung; Hsu, Jui-Lin; Ai, Chi-Fong

    2010-12-01

    Characteristics of Gd 2O 3 nanocrystal (Gd 2O 3-NC) memory with p +-p substrate high-low junction were investigated. The hysteresis memory window and program speed were significantly enhanced due to the band-to-band tunneling (BTBT) electrons injection by the high-low junction. Besides, under the same program/erase (P/E) cycling test, the electron and hole potential differences ( qϕBn + qϕBp) will contribute to superior endurance properties of the Gd 2O 3-NC memory with p-type substrate than that with n-type one. Without sacrificing the erase speed and charge retention characteristics, the Gd 2O 3-NC memory with p +-p substrate high-low junction can greatly improve the memory performances and can be applied into future non-volatile memory (NVM).

  13. New Content Addressable Memory (CAM) Technologies for Big Data and Intelligent Electronics Enabled by Magneto-Electric Ternary CAM

    Science.gov (United States)

    2017-12-11

    higher frequency than its intrinsic search delay. Furthermore, the MeTCAM incorporates the state-of-the art nonvolatile memory device, the voltage...faster speed compared to the software lookup. There are two types of CAM: binary CAM and ternary CAM (TCAM). Especially, TCAM has not only two binary...scalability. These characteristics allow MTJs interacting with the-state-of-the- art charge- based electronics on the same chip as a non-volatile

  14. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    International Nuclear Information System (INIS)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude; Zhang, Youguang

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits. (paper)

  15. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    Science.gov (United States)

    Wang, Zhaohao; Zhao, Weisheng; Kang, Wang; Bouchenak-Khelladi, Anes; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude

    2014-01-01

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits.

  16. TED KYCIA MEMORIAL SYMPOSIUM.

    Energy Technology Data Exchange (ETDEWEB)

    LITTENBERG, L.; RUBINSTEIN, R.; SAMIOS, N.; LI, K.; GIACOMELLI, G.; MOCKETT, P.; CARROLL, A.; JOHNSON, R.; BRYMAN, D.; TIPPENS, B.

    2000-05-19

    On the afternoon of May 19 2000, a Memorial Seminar was held in the BNL physics Large Seminar Room to honor the memory of Ted Kyeia, a prominent particle physicist who had been a member of the BNL staff for 40 years. Although it was understandably a somewhat sad occasion because Ted was no longer with us, nevertheless there was much for his colleagues and friends to celebrate in recalling the outstanding contributions that he had made in those four decades. The Seminar speakers were all people who had worked with Ted during that period; each discussed one aspect of his career, but also included anecdotes and personal reminiscences. This booklet contains the Seminar program, listing the speakers, and also copies of transparencies of the talks (and one paper which was a later expansion of a talk); sadly, not all of the personal remarks appeared on the transparencies.

  17. TED KYCIA MEMORIAL SYMPOSIUM

    International Nuclear Information System (INIS)

    LITTENBERG, L.; RUBINSTEIN, R.; SAMIOS, N.; LI, K.; GIACOMELLI, G.; MOCKETT, P.; CARROLL, A.; JOHNSON, R.; BRYMAN, D.; TIPPENS, B.

    2000-01-01

    On the afternoon of May 19 2000, a Memorial Seminar was held in the BNL physics Large Seminar Room to honor the memory of Ted Kyeia, a prominent particle physicist who had been a member of the BNL staff for 40 years. Although it was understandably a somewhat sad occasion because Ted was no longer with us, nevertheless there was much for his colleagues and friends to celebrate in recalling the outstanding contributions that he had made in those four decades. The Seminar speakers were all people who had worked with Ted during that period; each discussed one aspect of his career, but also included anecdotes and personal reminiscences. This booklet contains the Seminar program, listing the speakers, and also copies of transparencies of the talks (and one paper which was a later expansion of a talk); sadly, not all of the personal remarks appeared on the transparencies

  18. XBRL and Financial Reporting Transparency

    Directory of Open Access Journals (Sweden)

    Mihaela Enachi

    2013-02-01

    Full Text Available Using eXtensible Business Reporting Language (XBRL in financial reporting increases transparency by allowing viewing the details of the information provided by organizations without subdividing it and the possibility of easy access and processing information, even if it is presented in different languages or it results from the application of different regulations. Through this paper we try to emphasize the transparency ensured to financial reporting by using XBRL, which is why wetransposed in this modern format, partially, the contents of one of the components of financial reports, namely, the balance sheet. In this process we based on the requirements of the Romanian accountingregulations in compliance with European directives, XML requirements and XBRL requirements concerning schemas, linkbase files and instances, and we used three of the modules of Altova MissionKit application (XMLSpy, MapForce and StyleVision, while taking into account the best practices in the field.Keywords: financial reporting, XBRL, transparency, specification, taxonomy, instance

  19. Transparent stereoscopic display and application

    Science.gov (United States)

    Ranieri, Nicola; Seifert, Hagen; Gross, Markus

    2014-03-01

    Augmented reality has become important to our society as it can enrich the actual world with virtual information. Transparent screens offer one possibility to overlay rendered scenes with the environment, acting both as display and window. In this work, we review existing transparent back-projection screens for the use with active and passive stereo. Advantages and limitations are described and, based on these insights, a passive stereoscopic system using an anisotropic back-projection foil is proposed. To increase realism, we adapt rendered content to the viewer's position using a Kinect tracking system, which adds motion parallax to the binocular cues. A technique well known in control engineering is used to decrease latency and increase frequency of the tracker. Our transparent stereoscopic display prototype provides immersive viewing experience and is suitable for many augmented reality applications.

  20. Nuclear deterrence: which environmental transparency?

    International Nuclear Information System (INIS)

    Cherief, Hamza

    2012-01-01

    This article addresses the field of nuclear geopolitics. The author discusses the tensions between the principle of transparency regarding environmental issues on the one hand, and the protection of nuclear deterrence as instrument of power on the other hand. According to the French law, the preservation of nuclear power instruments means the acknowledgement of a legal regime which is specific to national defence requirements in terms of secret and right to information. Thus, the author discusses the constitutional limitations of the environmental transparency obligation for the protection of Nation's fundamental interests. Then, by commenting the Rainbow Warrior affair, the author highlights the exceptional limitations of the transparency requirement regarding nuclear issues

  1. Transparent solar cell window module

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

    2010-03-15

    A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

  2. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  3. Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Heinonen, O.

    2014-10-05

    Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

  4. Photo-assisted non-destructive readout of thin-film ferroelectric memories

    International Nuclear Information System (INIS)

    Gu Junxing; Jin Kuijuan

    2015-01-01

    By combining piezoelectric force microscopy with scanning surface potential microscopy and introducing a laser beam, we have demonstrated that the surface potential contrast of BiFeO 3 films can be recovered by light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on a BiFeO 3 film to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory. (authors)

  5. A FRAMEWORK FOR TRANSPARENCY IN INTERNATIONAL TRADE

    Directory of Open Access Journals (Sweden)

    Bernal Turnes, Paloma

    2015-01-01

    Full Text Available The aim of this paper is to cover the gap in literature about transparency in the context of international trade facilitation. It focuses on the importance of transparency in achieving growth in international trade and the differences between non-transparent practices and corruption in global trade. Managing the disclosure of information about rules, regulations and laws is not the only trade policy instrument where transparency becomes important. To build a framework on levels of transparency we developed a matrix classifying the transparency of each country based on ease of doing business and levels of bribery. Four different strategies are explained based on the different scenarios of transparency in international trade. The main conclusions reflect that disclosure of information is not enough to guarantee transparency and monitoring of transparency must be improved.

  6. Metal oxide-resistive memory using graphene-edge electrodes

    Science.gov (United States)

    Lee, Seunghyun; Sohn, Joon; Jiang, Zizhen; Chen, Hong-Yu; Philip Wong, H.-S.

    2015-09-01

    The emerging paradigm of `abundant-data' computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three-dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory (~3 Å thick) stacked in a vertical three-dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the three-dimensional architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.

  7. Metal oxide-resistive memory using graphene-edge electrodes.

    Science.gov (United States)

    Lee, Seunghyun; Sohn, Joon; Jiang, Zizhen; Chen, Hong-Yu; Philip Wong, H-S

    2015-09-25

    The emerging paradigm of 'abundant-data' computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three-dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory (∼ 3 Å thick) stacked in a vertical three-dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the three-dimensional architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.

  8. Ultra-Low Power Memory Design in Scaled Technology Nodes

    DEFF Research Database (Denmark)

    Zeinali, Behzad

    technology nodes, this thesis also investigates emerging non-volatile spintronics memories. In this respect, STT-MRAMs and SOT-MRAMs are studied and their design challenges are explored. To improve the read performance of STT-MRAMs, a novel non-destructive self-reference sensing scheme is proposed enabling...... technology nodes i.e. sub-50 nm. The 6T-SRAM designed based on the proposed device shows 18% leakage reduction and 54%, 6.6% and 3.1X improvement in read margin, write margin and write time, respectively, compared to the conventional 6T-SRAM cell. To address the standby power issue of SRAMs in scaled......In today’s chip design, robust memory design is one of the key challenges of process technology scaling. The steady pace of process technology scaling allows doubling memory array sizes approximately every 2 years. However, further scaling emerges undesirable effects which threaten the power...

  9. Why is Transparency Greenland Necessary?

    DEFF Research Database (Denmark)

    Jensen, Boris Brorman

    2012-01-01

    Greenland is facing significant changes in the composition of its economy, and is moving rapidly in the direction of becoming a commodities economy. Studies conducted by Transparency International in other parts of the world suggest that oil exploration and mining are among the areas of economic...

  10. Legal framework to ensure transparency

    International Nuclear Information System (INIS)

    Treier, A.

    2007-01-01

    There is a national and an international trend towards administrative transparency. This trend has not stopped at. the Swiss border. Some cantons of Switzerland have already introduced the transparency principle at the cantonal level. At the federal level, the Swiss Confederation introduced on 1 July 2006 the new Federal 'Freedom of Information Act'. Also the Swiss Federal Nuclear Safety Inspectorate (I-ISK) falls under this rule. Before introduction of this law on transparency. most of the documents of Swiss federal Administration were treated as confidential. Access rights to official documents were granted only on certain conditions and in special cases. But there is a general interest, that the public should have the possibility to ask to look at the files of the administration. Since years, the administration had no longer been able to hide behind secretiveness. For instance, the introduction of Internet brought a lot of transparency. The administration had to explain what sort of job it is actually doing and how it is doing. Also, the media were and are increasing their research for information. In this context, the new law on transparency ('Freedom of Information Act') is rather an evolution than a revolution. The Freedom of Information Act guarantees the public access to official documents. Most of the documents of the Federal Administration are public. This access can be limited, differentiated or refused in certain cases. That means that the principle of proportionality between private interests and public transparency has to be applied. The real challenge for the authority is the trade off between the public's right to access information and the industrial legitimate efforts to protect industrial and trade secrets. In the nuclear field, the international principle of transparency has also become an important national principle for Switzerland and FISK. The Swiss Nuclear Energy Act says that 'The relevant authorities shall regularly inform the general

  11. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  12. Transparency, Corruption, and Democratic Institutions

    Directory of Open Access Journals (Sweden)

    Graham Hubbs

    2014-01-01

    Full Text Available This essay examines some of the institutional arrangements that underlie corruption in democracy. It begins with a discussion of institutions as such, elaborating and extending some of John Searle’s remarks on the topic. It then turns to an examination of specifically democratic institutions; it draws here on Joshua Cohen’s recent Rousseau: A Free Community of Equals. One of the central concerns of Cohen’s Rousseau is how to arrange civic institutions so that they are able to perform their public functions without being easily abused by their members for individual gain. The view that Cohen sketches on behalf of Rousseau offers a clear framework for articulating institutional corruption in democracy. With this account of democratic institutions in place, the essay turns the discussion to the role of transparency in deterring institutional corruption. The basic thought here is perhaps unsurprising: to ensure that a democratic institution is serving its public function and not being manipulated for self-interested gain, its activities must be subject to public scrutiny, and so these activities must be transparent to the public. Saying this makes the role of transparency in a well-functioning democracy clear, but it does not settle how transparency is to be realized. The essay argues that transparency can be realized in a democracy only by an extra-governmental institution that has several of the familiar features of the press. If this is correct, it follows that in its design and in many, though not all, of its activities, WikiLeaks provides a contemporary example of such an institution.

  13. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM

    Directory of Open Access Journals (Sweden)

    Marc Bocquet

    2014-01-01

    Full Text Available Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

  14. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    International Nuclear Information System (INIS)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  15. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Ando, K., E-mail: ando-koji@aist.go.jp; Yuasa, S. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568 (Japan); Fujita, S.; Ito, J.; Yoda, H. [Toshiba Corporation, Kawasaki 212-8582 (Japan); Suzuki, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Nakatani, Y. [Department of Communication Engineering and Informatics, University of Electro-Communication, Chofu 182-8585 (Japan); Miyazaki, T. [WPI-AIMR, Tohoku University, Sendai 980-8577 (Japan)

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  16. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  17. DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-09-01

    Full Text Available To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM, spin transfer torque RAM (STT-RAM, phase change RAM (PCM and embedded DRAM (eDRAM and 2D memories designed using spin orbit torque RAM (SOT-RAM, domain wall memory (DWM and Flash memory. In addition to single-level cell (SLC designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparshmittal/destinyv2.

  18. Scientific developments of liquid crystal-based optical memory: a review

    Science.gov (United States)

    Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

    2017-01-01

    The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

  19. Outside finance, dominant investors and strategic transparency

    NARCIS (Netherlands)

    Perotti, E.C.; von Thadden, E.-L.

    2000-01-01

    This paper studies optimal financial contracts and product market competition under a strategic transparency decision. When firms seeking outside finance resort to actively monitored debt in order to commit against opportunistic behaviour, the dominant lender can influence corporate transparency.

  20. The uncertain relationship between transparency and accountability

    OpenAIRE

    Fox, Jonathan A

    2007-01-01

    The concepts of transparency and accountability are closely linked: transparency is supposed to generate accountability. This article questions this widely held assumption. Transparency mobilises the power of shame, yet the shameless may not be vulnerable to public exposure. Truth often fails to lead to justice. After exploring different definitions and dimensions of the two ideas, the more relevant question turns out tobe: what kinds of transparency lead to what kinds of accountability, and ...

  1. Narrative Transparency: Adopting a Rhetorical Stance

    DEFF Research Database (Denmark)

    Arnould, Eric; Press, Melea

    2014-01-01

    In this paper, we look at how alternative marketing organisations communicate transparency in a climate of generalised risk and scepticism. We contrast the traditional numeric approach to transparency, which involves auditing and third-party certifications; with an alternative approach that we call...... transparency to their stakeholders. These rhetorical tactics include persona, allegory, consumer sovereignty and enlightenment. Community supported agriculture programmes from across the United States are the context for this study. Findings enrich discussions about best practices for transparency...

  2. The economic impact of central bank transparency

    NARCIS (Netherlands)

    van der Cruijsen, C.A.B.

    2008-01-01

    During the last decades a lot of central banks have become more transparent about their monetary policy. The research question that is addressed in this book is whether central bank transparency is desirable from an economic viewpoint. It is shown that transparency increases have been beneficial.

  3. Designing and Evaluation Transparency in Open Government

    NARCIS (Netherlands)

    Matheus, R.

    One of the objectives of opening data is the creation of transparency. However, transparency is an ill-defined concept. My PhD thesis aims to help designers, architects and policy-makers develop portals and applications to enable transparency for the diverse society. Literature will be reviewed to

  4. Playing the numbers game: Dealing with transparency

    NARCIS (Netherlands)

    Pachidi, S.; Huysman, M.H.; Berends, Hans; van de Weerd, G.C.

    2015-01-01

    Our research focus is on unpacking the performativity of transparency in order to explain how digital technologies, formerly perceived as enablers of surveillance and control, afford opaqueness as much as transparency. We develop a sociomaterial perspective on transparency and investigate how

  5. Does Central Bank Transparancy Reduce Interest Rates?

    NARCIS (Netherlands)

    Geraats, P.; Eijffinger, S.C.W.; van der Cruijsen, C.A.B.

    2006-01-01

    Central banks have become increasingly transparent during the last decade. One of the main bene ts of transparency predicted by theoreticalmodels is that it enhances the credibility, reputation, and exibility of monetary policy, which suggests that increased transparency should result in lower

  6. Transparency and Movement in Architecture

    OpenAIRE

    Estremadoyro, Veronica

    2003-01-01

    This project investigates transparency and movement as the main measured elements that defi ne space. These elements seek to articulate distinct and memorable places throughout the building, acknowledging its unique setting along the Potomac River in Old Town Alexandria, Virginia. Architecture and nature as opposite elements combine here to defi ne a building in which water, light and views become the main architectural agents set in dialog with the natural surroundings. An existi...

  7. Interfacial phase-change memory.

    Science.gov (United States)

    Simpson, R E; Fons, P; Kolobov, A V; Fukaya, T; Krbal, M; Yagi, T; Tominaga, J

    2011-07-03

    Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.

  8. Transparency as an element of public confidence

    International Nuclear Information System (INIS)

    Kim, H.K.

    2007-01-01

    In the modern society, there is increasing demands for greater transparency. It has been discussed with respect to corruption or ethics issues in social science. The need for greater openness and transparency in nuclear regulation is widely recognised as public expectations on regulator grow. It is also related to the digital and information technology that enables disclosures of every activity and information of individual and organisation, characterised by numerous 'small brothers'. Transparency has become a key word in this ubiquitous era. Transparency in regulatory activities needs to be understood in following contexts. First, transparency is one of elements to build public confidence in regulator and eventually to achieve regulatory goal of providing the public with satisfaction at nuclear safety. Transparent bases of competence, independence, ethics and integrity of working process of regulatory body would enhance public confidence. Second, activities transmitting information on nuclear safety and preparedness to be accessed are different types of transparency. Communication is an active method of transparency. With increasing use of web-sites, 'digital transparency' is also discussed as passive one. Transparency in regulatory process may be more important than that of contents. Simply providing more information is of little value and specific information may need to be protected for security reason. Third, transparency should be discussed in international, national and organizational perspectives. It has been demanded through international instruments. for each country, transparency is demanded by residents, public, NGOs, media and other stakeholders. Employees also demand more transparency in operating and regulatory organisations. Whistle-blower may appear unless they are satisfied. Fourth, pursuing transparency may cause undue social cost or adverse effects. Over-transparency may decrease public confidence and the process for transparency may also hinder

  9. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L.; Schwank, J.R.

    1999-03-02

    It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).

  10. EDITORIAL: On display with transparent conducting films On display with transparent conducting films

    Science.gov (United States)

    Demming, Anna

    2012-03-01

    the sheet resistance of HNO3 treated carbon-nanotube films than the removal of residual N-methylpyrrolidone. Unsurprisingly graphene, the latest carbon wonder material, has also shown remarkable potential as a transparent conducting film. Chemical vapour deposition (CVD) synthesis of graphene has the advantage that it allows fabrication of the sheets to be scaled up. A collaboration of researchers in the USA, Singapore and Korea demonstrated that the conductivity of CVD graphene sheets can be improved by p-doping with AuCl3 [9]. The potential of graphene in a range of applications is also being demonstrated, as researchers in Australia and China show in a report on graphene in transparent conducting electrodes for GaN LED devices [10]. The review in this issue [4] provides a comprehensive overview of graphene as an electrode, including the synthesis, chemical doping and work function engineering of the material, as well as applications in transistors, memories, molecular junctions, touch screens, LCDs, LEDs and solar cells. Back in the early 1950s Gillham and Preston saw the possibility of using their gold sputtered bismuth oxide films for windows that could be electrically heated and took out a patent on their discovery [11]. While they saw potential applications for conducting transparent films, it could be argued that even Gillham and Preston would have been surprised at the extent to which transparent conducting films have infiltrated everyday technology over the 60 years since. It is tempting to wonder what wide reaching ramifications the current fruitful activity in graphene device research may have in the decades to come. References [1] Ayrton W E and Mather T 1894 J. Int. Elec. Eng. 23 376-80 [2] Gillham E J and Preston J S 1952 Proc. Phys. Soc. B 65 649 [3] Ishiguro K, Sasaki T, Arai T and Imai I 1958 J. Phys. Soc. Jpn. 13 296-304 [4] Jo G, Choe M, Lee S, Park W, Kahng Y H and Lee T 2012 Nanotechnology 23 112001 [5] Guo P and Aegerter M A 1999 Thin Solid

  11. Inverse Mapping Structures onto Transparency

    Science.gov (United States)

    Ferris, Kim F.; Sun, Xin; Whitney, Paul A.

    2008-03-01

    Composite materials have continued to make a number of improvements in physical properties (mechanical moduli), but lag behind in optical responses such as transparency. The hybrid nature of the composite material, particle and host matrix, divides light scattering issues into particle size regimes, where the particle size d >> lambda and approximations such as anomalous dispersion have proven useful, and dceramic-polymer composite as a case example, we have used black box optimization methods to examine the practical bounds for each regime and to assess design rules. These guidelines suggest limitations for particle morphologies and the optical properties of the component materials.

  12. Impact of deposition parameters on the performance of ceria based resistive switching memories

    International Nuclear Information System (INIS)

    Zhang, Lepeng; Younis, Adnan; Chu, Dewei; Li, Sean

    2016-01-01

    Resistive-switching memories stacked in a metal–insulator–metal (MIM) like structure have shown great potential for next generation non-volatile memories. In this study, ceria based resistive memory stacks are fabricated by implementing different sputter conditions (temperatures and powers). The films deposited at low temperatures were found to have random grain orientations, less porosity and dense structure. The effect of deposition conditions on resistive switching characteristics of as-prepared films were also investigated. Improved and reliable resistive switching behaviors were achieved for the memory devices occupying less porosity and densely packed structures prepared at low temperatures. Finally, the underlying switching mechanism was also explained on the basis of quantitative analysis. (paper)

  13. Thermoelectric Effects in Simulations of Phase Change Memory Mushroom Cells

    Science.gov (United States)

    Faraclas, Azer; Bakan, Gokhan; Gokirmak, Ali; Silva, Helena

    2012-02-01

    Phase change memory is a potential candidate for the future of high-speed non-volatile memory, however significant improvements in cell design is crucial for its success in the mainstream market. Due to the asymmetric geometry of phase change mushroom cells and the high temperature gradients generated, thermoelectric effects play a key role in determining energy consumption, cell performance, and reliability. In this study, rotationally symmetric 2D finite element simulations using COMSOL Multiphysics are implemented for GeSbTe (GST). Temperature dependent material parameters (electrical conductivity, thermal conductivity, heat capacity, and Seebeck coefficient) are included in the model for accuracy. Switching the direction of current shows a large change in peak molten volume within the cell, as well as current and power consumption.

  14. New memory devices based on the proton transfer process

    International Nuclear Information System (INIS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

  15. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  16. Hybrid superconducting-magnetic memory device using competing order parameters.

    Science.gov (United States)

    Baek, Burm; Rippard, William H; Benz, Samuel P; Russek, Stephen E; Dresselhaus, Paul D

    2014-05-28

    In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

  17. On-chip phase-change photonic memory and computing

    Science.gov (United States)

    Cheng, Zengguang; Ríos, Carlos; Youngblood, Nathan; Wright, C. David; Pernice, Wolfram H. P.; Bhaskaran, Harish

    2017-08-01

    The use of photonics in computing is a hot topic of interest, driven by the need for ever-increasing speed along with reduced power consumption. In existing computing architectures, photonic data storage would dramatically improve the performance by reducing latencies associated with electrical memories. At the same time, the rise of `big data' and `deep learning' is driving the quest for non-von Neumann and brain-inspired computing paradigms. To succeed in both aspects, we have demonstrated non-volatile multi-level photonic memory avoiding the von Neumann bottleneck in the existing computing paradigm and a photonic synapse resembling the biological synapses for brain-inspired computing using phase-change materials (Ge2Sb2Te5).

  18. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  19. Transparency in nanophotonic quantum wires

    International Nuclear Information System (INIS)

    Singh, Mahi R

    2009-01-01

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  20. Organizational Transparency in the Internet Industry

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    Reporting from an empirical investigation at Google and Facebook, this paper conceptualizes the stabilization of transparency as a form and norm conduct connecting and shaping technical, financial, cultural and political processes in the Internet industry. Rather than approach transparency...... on transparency, we have very few in-depth empirical investigations of its organizational and regulatory ramifications, particularly in the Internet industry. Based on interviews and extensive empirical material about Google's and Facebook's engagement with transparency idea(l)s, the paper shows how...... as a panacea to concerns about privacy, organizational conduct and accountability, this paper explores the boundary work that goes into doing and promising transparency Using insights from the literature on transparency, ´sociologies of translations' and process approaches to organization, this paper captures...

  1. Organizational Transparency in the Internet Industry

    DEFF Research Database (Denmark)

    Flyverbom, Mikkel

    Reporting from an empirical investigation at Google and Facebook, this paper conceptualizes the stabilization of transparency as a form and norm conduct connecting and shaping technical, financial, cultural and political processes in the Internet industry. Rather than approach transparency...... as a panacea to concerns about privacy, organizational conduct and accountability, this paper explores the boundary work that goes into doing and promising transparency Using insights from the literature on transparency, ´sociologies of translations' and process approaches to organization, this paper captures...... on transparency, we have very few in-depth empirical investigations of its organizational and regulatory ramifications, particularly in the Internet industry. Based on interviews and extensive empirical material about Google's and Facebook's engagement with transparency idea(l)s, the paper shows how...

  2. 76 FR 1180 - FDA Transparency Initiative: Improving Transparency to Regulated Industry

    Science.gov (United States)

    2011-01-07

    ... blog, which is ongoing, has offered an opportunity for exchange about specific ideas for transparency... in March 2010 (75 FR 11893, March 12, 2010), regulated companies requested additional transparency...

  3. Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

    Science.gov (United States)

    Wang, Shengkai; Sun, Xianwen; Li, Guanghui; Jia, Caihong; Li, Guoqiang; Zhang, Weifeng

    2018-01-01

    Pt/Nd:SrTiO3 (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can be controlled by the applied pulse width or magnitude. Both the RS and PV are related to the bias-induced modulation of the interface barrier, both in height and width, at the Pt/Nd:STO interface. The results establish a strong connection between the RS/PV effects and the modulation of the Nd:STO interface triggered by applied electric field and provide a new route by using an open-circuit voltage for non-destructively sensing multiple non-volatile memory states.

  4. Pursuing transparency through science courts

    International Nuclear Information System (INIS)

    Field, Thomas G. Jr.

    1999-01-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards

  5. Pursuing transparency through science courts

    Energy Technology Data Exchange (ETDEWEB)

    Field, Thomas G. Jr. [Franklin Pierce Law Center, Concord, NH (United States)

    1999-12-01

    Many, disappointed with traditional ways to assess and manage health, safety and environmental risks, have sought alternatives that might better serve democratic values and truth. Arthur Kantrowitz proposed one in 1967. Named the 'Science Court' by the media, it sought to air opposing viewpoints publicly before an independent, neutral and technically competent panel of scientists. The idea has received considerable attention over the years, but some see it as too opaque and elitist. Ironically, others may view it as too transparent. Beyond that, as proposed it might have been too time-consuming and expensive, and few scientists would have welcomed a suggestion for cross-examination. Yet, its key features still offer promise for resolving difficult policy disputes and might be usefully integrated with notions since leading to the creation and endorsement of advisory science boards.

  6. Electronic and atomic structure of Ge2Sb2Te5 phase change memory material

    International Nuclear Information System (INIS)

    Robertson, J.; Xiong, K.; Peacock, P.W.

    2007-01-01

    Electronic structure calculations are presented for various model structures of the crystalline and amorphous phases of Ge 2 Sb 2 Te 5 . The structures are all found to possess a band gap of order 0.5 eV, indicating closed shell behaviour. It is pointed out that structural vacancies in A7-like Ge 2 Sb 2 Te 5 are not electronically active. In addition, A7-like structures do not support valence alternation pair defects, which are one model of the conduction processes in the amorphous phase in non-volatile memories

  7. Atomically Bonded Transparent Superhydrophobic Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, Tolga [ORNL

    2015-08-01

    Maintaining clarity and avoiding the accumulation of water and dirt on optically transparent surfaces such as US military vehicle windshields, viewports, periscope optical head windows, and electronic equipment cover glasses are critical to providing a high level of visibility, improved survivability, and much-needed safety for warfighters in the field. Through a combination of physical vapor deposition techniques and the exploitation of metastable phase separation in low-alkali borosilicate, a novel technology was developed for the fabrication of optically transparent, porous nanostructured silica thin film coatings that are strongly bonded to glass platforms. The nanotextured films, initially structurally superhydrophilic, exhibit superior superhydrophobicity, hence antisoiling ability, following a simple but robust modification in surface chemistry. The surfaces yield water droplet contact angles as high as 172°. Moreover, the nanostructured nature of these coatings provides increased light scattering in the UV regime and reduced reflectivity (i.e., enhanced transmission) over a broad range of the visible spectrum. In addition to these functionalities, the coatings exhibit superior mechanical resistance to abrasion and are thermally stable to temperatures approaching 500°C. The overall process technology relies on industry standard equipment and inherently scalable manufacturing processes and demands only nontoxic, naturally abundant, and inexpensive base materials. Such coatings, applied to the optical components of current and future combat equipment and military vehicles will provide a significant strategic advantage for warfighters. The inherent self-cleaning properties of such superhydrophobic coatings will also mitigate biofouling of optical windows exposed to high-humidity conditions and can help decrease repair/replacement costs, reduce maintenance, and increase readiness by limiting equipment downtime.

  8. Transparency and public value : Analyzing the transparency practices and value creation of public utilities

    NARCIS (Netherlands)

    Douglas, S.C.; Meijer, A.J.

    2016-01-01

    This article examines to what extent transparency is a condition for the creation of public value. Transparency is usually narrowly defined as a tool for external stakeholders to monitor the internal workings of an organization, but public value management positions transparency as a broader

  9. MEMORY MODULATION

    Science.gov (United States)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

  10. Categories and Dimensions of Organizational Transparency

    DEFF Research Database (Denmark)

    Albu, Oana Brindusa; Flyverbom, Mikkel

    -clearing effort: we set out to problematize current assumptions that shape the literature on transparency in important ways, but are rarely addressed in a structured manner. On the backdrop of this review, we point to the value of conceptualizing transparency as a dynamic, performative and paradoxical phenomenon...

  11. Fiscal Transparency, Elections and Public Employment

    DEFF Research Database (Denmark)

    Aaskoven, Lasse

    2016-01-01

    transparency and that this effect is strongest in years of election. These hypotheses are tested on a panel of 20 OECD countries from 1995 to 2010. The analyses show substantial evidence in favor of the arguments. Fiscal transparency lowers the positive effect of growth on public employment, a relationship...

  12. Single side Emitting Transparent OLED lamp

    NARCIS (Netherlands)

    Lifka, H.; Verschuren, C.A.; Bruls, D.M.; Tanase, C.

    2011-01-01

    Transparent OLEDs offer great potential for novel applications. Preferably, the light should be emitted from one side only. This can bedone to some extent by modifying electrode thicknesses, but at the cost of reduced transparency. Here, we demonstrate a new approach tomake single side emissive

  13. Transparency | IDRC - International Development Research Centre

    International Development Research Centre (IDRC) Digital Library (Canada)

    Transparency means openness. It allows Canadians to hold the government accountable through the proactive release of information on government activities, programs, policies, and services in formats that are easy to find, access, and use. Transparency is the key element in the Government of Canada's Commitment to ...

  14. Transparency in netchains : evaluation and perspective

    NARCIS (Netherlands)

    Hofstede, G.J.; Schepers, H.E.; Trienekens, J.H.

    2003-01-01

    This paper was written for KLICT to evaluate the focus area Transparency in Netchains. It revisits the definitions and research agenda in the review paper with which the focal area started (Hofstede 2002). The definition of transparency has turned out to serve its purpose. The research has

  15. A new method for obtaining transparent electrodes

    DEFF Research Database (Denmark)

    Malureanu, Radu; Zalkovskij, Maksim; Song, Zhengyong

    2012-01-01

    In this article, we propose a simple scheme to make a metallic film on a semi-infinite substrate optically transparent, thus obtaining a completely transparent electrode in a desired frequency range. By placing a composite layer consisting of dielectric and metallic stripes on top of the metallic...

  16. Transparent face recognition in the home environment

    NARCIS (Netherlands)

    Beumer, G.M.; Veldhuis, Raymond N.J.; Bazen, A.M.

    2004-01-01

    The BASIS project is about the secure application of transparent biometrics in the home environment. Due to transparency and home-setting requirements there is variance in appearance of the subject. An other problem which needs attention is the extraction of features. The quality of the extracted

  17. Organizational transparency as myth and metaphor

    NARCIS (Netherlands)

    Christensen, L.T.; Cornelissen, J.P.

    2015-01-01

    Transparency has achieved a mythical status in society. Myths are not false accounts or understandings, but deep-seated and definitive descriptions of the world that ontologically ground the ways in which we frame and see the world around us. We explore the mythical nature of transparency from this

  18. Narrative Transparency: Adopting a Rhetorical Stance

    DEFF Research Database (Denmark)

    Arnould, Eric; Press, Melea

    2014-01-01

    In this paper, we look at how alternative marketing organisations communicate transparency in a climate of generalised risk and scepticism. We contrast the traditional numeric approach to transparency, which involves auditing and third-party certifications; with an alternative approach that we call...

  19. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation hardened CMOS devices and circuits - LDRD Project (FY99)

    International Nuclear Information System (INIS)

    Myers, David R.; Jessing, Jeffrey R.; Spahn, Olga B.; Shaneyfelt, Marty R.

    2000-01-01

    This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds

  20. Competition for transparency as a carrier of competition. Transparency needs in the European wholesale electricity markets

    International Nuclear Information System (INIS)

    Jong, Hanneke de; Hakvoort, Rudi

    2005-01-01

    This paper analyses different transparency aspects regarding European wholesale electricity markets and discusses transparency issues to be solved. In Europe, currently some progress has been made with respect to market transparency but transparency issues related to transmission, system operation and regulation have received little attention so far. Transmission system operators (TSOs) and regulatory authorities need certain market information in order to secure efficient competition. However, TSOs and regulatory authorities need to communicate themselves in order to facilitate competition and decrease uncertainty among market participants. Furthermore, considering ongoing market integration both TSOs and regulatory authorities must exchange information amongst themselves in order to facilitate coordination and monitoring activities. The effect of a higher level of transparency on effective competition is depended on two categories of transparency aspects: aspects that are related to transparency in the sense of open and adequate communication (perspicuity) and aspects that are related to the easiness to understand (clarity). Transparency includes both aspects. Pursuing overall harmonization of the European transparency level is important to fully profit from a higher level of (international) harmonization. Effective harmonization requires harmonization on all communication aspects. For Europe, with its many immature markets, the dilemma remains whether it is preferable to have less transparency with a high level of harmonization or to have a higher level of transparency but a lower level of harmonization. (Author)

  1. Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer

    International Nuclear Information System (INIS)

    Choi, Hyejung; Kim, Tae-Wook; Jung, Seung-Jae; Chang, Man; Lee, Takhee; Hwang, Hyunsang; Choi, Byung-Sang

    2008-01-01

    A self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. Pt NPs with a narrow size distribution (diameter ∼4 nm) were synthesized via an alcohol reduction method. The monolayer of these Pt NPs was immobilized on a SiO 2 substrate using poly(4-vinylpyridine) (P4VP) as a surface modifier. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window of 5.8 V under ± 7 V for program/erase voltage. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices

  2. Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

    Science.gov (United States)

    Wang, Weijie; Loke, Desmond; Shi, Luping; Zhao, Rong; Yang, Hongxin; Law, Leong-Tat; Ng, Lung-Tat; Lim, Kian-Guan; Yeo, Yee-Chia; Chong, Tow-Chong; Lacaita, Andrea L

    2012-01-01

    The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

  3. Device and methods for writing and erasing analog information in small memory units via voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    El Gabaly Marquez, Farid; Talin, Albert Alec

    2018-04-17

    Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

  4. Morphology of atmospheric transparent inhomogeneities

    Science.gov (United States)

    Eaton, Frank D.; Peterson, William A.; Hines, John R.; Drexler, James J.; Soules, David B.; Waldie, Arthur H.; Qualtrough, John A.

    1990-09-01

    Observations are presented displaying the evolution of transparent inhomogeneities in the natural atmosphere. All results are for horizontal paths in the first few meters above ground level. Measurements were taken using both a schlieren optical system capable of sensing fine scale gradients of refractive index and an optical system sensing the fine structure of intensity scintillation over various path lengths. Laser sources were utilized for both systems, and a full description of the two optical systems is included. The schlieren system employs two high quality 10-in-diameter mirrors to produce the illuminated working section. Trade-offs between this and other schlieren optical system configurations are discussed. The intensity scintillation measurements were taken with a collimated laser beam projected on a target board. System characteristics including the CCD camera, sampled frame rates, exposure times, and data processing are discussed. The central problem addressed in this study is to identify the conditions when G. Taylor's "frozen turbulence" hypothesis is justified. The optically derived results are compared to results from previous studies using tower, aircraft, and tethered balloon measurements. Analyses presented include histograms, three-dimensional displays, contour maps of features, and frame subtraction schemes. Simultaneous measurements of integrated path and point measurements of the refractive index structure parameter (Cn2), and wind , are included in the results.

  5. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

    International Nuclear Information System (INIS)

    Zhang Junyu; Wang Yong; Liu Jing; Zhang Manhong; Xu Zhongguang; Huo Zongliang; Liu Ming

    2012-01-01

    We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the 'erased states' can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications. (semiconductor devices)

  6. Transparency in Global Environmental Governance: A Coming of Age?

    NARCIS (Netherlands)

    Gupta, A.

    2010-01-01

    This introductory article draws on the contributions to this special issue to consider the implications of a transparency turn in global environmental and sustainability governance. Three interrelated aspects are addressed: why transparency now? How is transparency being institutionalized? And what

  7. Memory Palaces

    Science.gov (United States)

    Wood, Marianne

    2007-01-01

    This article presents a lesson called Memory Palaces. A memory palace is a memory tool used to remember information, usually as visual images, in a sequence that is logical to the person remembering it. In his book, "In the Palaces of Memory", George Johnson calls them "...structure(s) for arranging knowledge. Lots of connections to language arts,…

  8. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    Science.gov (United States)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  9. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  10. Overview of emerging nonvolatile memory technologies.

    Science.gov (United States)

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  11. Supporting the development of transparent interaction

    DEFF Research Database (Denmark)

    Bardram, Jakob Eyvind; Bertelsen, Olav Wedege

    1995-01-01

    Transparency has been seen as a necessary aspect of successful human-computer interaction. In this paper we investigate this concept by looking at it from the point of view of activity theory. We show that transparency cannot be understood as a static feature of the interface, but that the crucial...... point in achieving transparent interaction is the ongoing development of unconscious operations, embedded in the process of use. We suggest that the process of deliberate formation and refinement of operations during the course of interaction, is supported by setting conditions for the creation...

  12. Consumer poaching, brand switching, and price transparency

    DEFF Research Database (Denmark)

    Schultz, Christian

    2014-01-01

    This paper addresses price transparency on the consumer side in markets with behavioral price discrimination which feature welfare reducing brand switching. When long-term contracts are not available, an increase in transparency intensifies competition, lowers prices and profits, reduces brand...... switching and benefits consumers and welfare. With long-term contracts, an increase in transparency reduces the use of long-term contracts, leading to more brand switching and a welfare loss. Otherwise, the results are the same as without long-term contracts....

  13. Optimal Degrees of Transparency in Monetary Policymaking

    DEFF Research Database (Denmark)

    Jensen, Henrik

    2002-01-01

    According to most academics and policymakers, transparency in monetary policymaking is desirable. I examine this proposition in a small theoretical model emphasizing forward-looking private sector behavior. Transparency makes it easier for price setters to infer the central bank's future policy...... intentions, thereby making current inflation more responsive to policy actions. This induces the central bank to pay more attention to inflation rather than output gap stabilization. Then, transparency may be disadvantageous. It may actually be a policy-distorting straitjacket if the central bank enjoys low...

  14. Federal Funding Accountability and Transparency Act frequently asked questions

    Science.gov (United States)

    One stop shop for Federal Funding Accountability and Transparency Act (FFATA) questions. This frequently asked document will assist with Federal Funding Accountability and Transparency Act (FFATA) related questions.

  15. Multiplexed image storage by electromagnetically induced transparency in a solid

    Science.gov (United States)

    Heinze, G.; Rentzsch, N.; Halfmann, T.

    2012-11-01

    We report on frequency- and angle-multiplexed image storage by electromagnetically induced transparency (EIT) in a Pr3+:Y2SiO5 crystal. Frequency multiplexing by EIT relies on simultaneous storage of light pulses in atomic coherences, driven in different frequency ensembles of the inhomogeneously broadened solid medium. Angular multiplexing by EIT relies on phase matching of the driving laser beams, which permits simultaneous storage of light pulses propagating under different angles into the crystal. We apply the multiplexing techniques to increase the storage capacity of the EIT-driven optical memory, in particular to implement multiplexed storage of larger two-dimensional amounts of data (images). We demonstrate selective storage and readout of images by frequency-multiplexed EIT and angular-multiplexed EIT, as well as the potential to combine both multiplexing approaches towards further enhanced storage capacities.

  16. Light scattering under conditions of nonstationary electromagnetically induced transparency

    International Nuclear Information System (INIS)

    Larionov, N V; Sokolov, I M

    2007-01-01

    The propagation of probe radiation pulses in ultracold atomic ensembles is studied theoretically under conditions of electromagnetically induced transparency. The pulse 'stopping' process is considered which takes place upon nonadiabatic switching off and subsequent switching on the control field. We analysed the formation of an inverted recovered probe radiation pulse, i.e. the pulse propagating in the direction opposite to the propagation direction before the pulse stopping. Based on this analysis, a scheme is proposed for lidar probing atomic or molecular clouds in which the probe pulse penetrates into a cloud over the specified depth, while information on the cloud state is obtained from the parameters of the inverted pulse. Calculations are performed for an ensemble of 87 Rb atoms. (fifth seminar in memory of d.n. klyshko)

  17. Enterprise wide transparent information access

    International Nuclear Information System (INIS)

    Brown, J.

    1995-05-01

    The information management needs of the Department of Energy (DOE) represents a fertile domain for the development of highly sophisticated yet intuitive enterprise-wide computing solutions. These solutions must support business operations, research agendas, technology development efforts, decision support, and other application areas with a user base ranging from technical staff to the highest levels of management. One area of primary interest is in the Environmental Restoration and Waste Management Branch of DOE. In this arena, the issue of tracking and managing nuclear waste related to the long legacy of prior defense production and research programs is one of high visibility and great concern. The Tank Waste Information Network System (TWINS) application has been created by the Pacific Northwest Laboratory (PNL) for the DOE to assist in managing and accessing the information related to this mission. The TWINS solution addresses many of the technical issues faced by other efforts to provide integrated information access to a wide variety of stakeholders. TWINS provides secure transparent access to distributed heterogeneous multimedia information sources from around the DOE complex. The users interact with the information through a consistent user interface that presents the desired data in a common format regardless of the structure of the source information. The solutions developed by the TWINS project represent an integration of several technologies and products that can be applied to other mission areas within DOE and other government agencies. These solutions are now being applied to public and private sector problem domains as well. The successful integration and inter-operation of both commercial and custom modules into a flexible and extensible information architecture will help ensure that new problems facing DOE and other clients can be addressed more rapidly in the future by re-use of existing tools and techniques proven viable through the TWINS efforts

  18. Memory for Light as a Quantum Process

    International Nuclear Information System (INIS)

    Lobino, M.; Kupchak, C.; Lvovsky, A. I.; Figueroa, E.

    2009-01-01

    We report complete characterization of an optical memory based on electromagnetically induced transparency. We recover the superoperator associated with the memory, under two different working conditions, by means of a quantum process tomography technique that involves storage of coherent states and their characterization upon retrieval. In this way, we can predict the quantum state retrieved from the memory for any input, for example, the squeezed vacuum or the Fock state. We employ the acquired superoperator to verify the nonclassicality benchmark for the storage of a Gaussian distributed set of coherent states.

  19. Transparency of atom-sized superconducting junctions

    International Nuclear Information System (INIS)

    Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

    1995-01-01

    We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

  20. Learning, Transparency and Relationship Building: Ethiopian ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Learning, Transparency and Relationship Building: Ethiopian Women Parliamentarians and Young Female University Students. IDRC's Democratic Governance, Women's Rights and Gender Equality initiative is supporting a body of comparative research on whether and how democratic processes and institutions are ...