Porous silicon technology for integrated microsystems

Science.gov (United States)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Challenges in amorphous silicon solar cell technology

NARCIS (Netherlands)

Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

2000-01-01

Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

Silicon on insulator technology. Characteristics. Applications; Technologies silicium sur isolant. Caracteristiques. Exemples d'application

Energy Technology Data Exchange (ETDEWEB)

Suat, J. P.; Peccoud, L.; Le Goascoz, V.; Garcia, M.; Mackowiak, E.

1975-01-31

The advantages resulting from a SOS (Silicon-on-Sapphire) MOS technology are demonstrated. Experimental results giving the performance of C.MOS and depletion-enrichment P-channel technologies are presented, with an application of Silicon on insulator on development, that is to say a 1024 bits MNOS memory, peripheral circuits being developed according to the depletion-enrichment technology.

Silicon Micromachines for Science and Technology

International Nuclear Information System (INIS)

Bishop, David J.

2002-01-01

The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

Plasma deposition of amorphous silicon-based materials

CERN Document Server

Bruno, Giovanni; Madan, Arun

1995-01-01

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Channeling-based collimators for generation of microbeams produced by silicon micromachining technology

International Nuclear Information System (INIS)

Guidi, V.; Antonini, A.; Milan, E.; Ronzoni, A.; Martinelli, G.; Biryukov, V.M.; Chesnokov, Yu.A.

2006-01-01

The growing interest on micro-beams in recent years and the combined development of channeling technology in high-energy physics have opened the way to new concepts for micro-beams devices. Silicon micromachining technology is here applied to manufacture micro-collimators in inexpensive and feasible ways. Both dry and wet etchings can be employed for the purpose, though the latter technique appears to be cheaper and easier. Two designs for micro-collimator devices have been considered and preliminary samples have been produced accordingly

Mechanical engineering and design of silicon-based particle tracking devices

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

1990-01-01

The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

DEFF Research Database (Denmark)

Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

2015-01-01

IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... support and deep reactive-ion etching forms the waveguide bulk with smooth and nearly vertical sidewalls. Aluminum metallization covers the etched sidewalls, fully enclosing the waveguides in metal from all sides. Waveguides are fabricated with a rectangular cross section of 560 μm x 280 μm. The measured...

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Polishing of silicon based advanced ceramics

Science.gov (United States)

Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

2009-05-01

Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

CERN Document Server

Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

2006-01-01

The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

Science.gov (United States)

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

2015-01-01

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

Fiscal 1993 R and D project for industrial science and technology. Report on results of R and D on silicon-based high polymer material; 1993 nendo keisokei kobunshi zairyo no kenkyu kaihtsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on the silicon-based high polymer that are hoped for superior electronic/optical functions and heat/flame-resistant dynamical properties, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method, with the fiscal 1993 results summarized. In the synthesis of electrically conductive silicon-based polymeric materials, a concept of indirect doping was presented, revealing that workability and electrically conductive properties were enhanced by additives. In the synthesis of new silicon-based polymeric materials capable of circuit plotting, studies were made on Si-Si bond forming reaction of alkoxydisilanes as well as on the correlation between polysilane skeleton structure and its property. In the synthesis of new silicon-based polymeric materials having for example a light-emitting function, evaluation was made on synthesis and light emitting property concerning the compound that controlled the silicon skeleton structure. In addition, R and D was conducted on the precision synthesis technology of compounds, on which manifestation of photoelectric conversion function was expected. Further, research was done on unsaturated and high coordination organosilicic compound, functionality of silicon-based high polymer, and synthesis/polymerization of silicon monomer. (NEDO)

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

Science.gov (United States)

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Hanna V. Bandarenka

2018-05-01

Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Graphene as a transparent electrode for amorphous silicon-based solar cells

International Nuclear Information System (INIS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-01-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

Graphene as a transparent electrode for amorphous silicon-based solar cells

Science.gov (United States)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Graphene as a transparent electrode for amorphous silicon-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

2015-06-28

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

Science.gov (United States)

Wu, Junjie; Lei, Lihua; Chen, Xin; Cai, Xiaoyu; Li, Yuan; Han, Tao

2014-01-01

For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction. PMID:25360581

A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

Directory of Open Access Journals (Sweden)

Junjie Wu

2014-10-01

Full Text Available For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction.

A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

International Nuclear Information System (INIS)

Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

2008-01-01

This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

The spatial resolution of silicon-based electron detectors in beta-autoradiography.

Science.gov (United States)

Cabello, Jorge; Wells, Kevin

2010-03-21

Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

International Nuclear Information System (INIS)

Atwood, W.B.

1993-06-01

The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

Photonic integration and photonics-electronics convergence on silicon platform

CERN Document Server

Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

2015-01-01

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario.

Science.gov (United States)

Boletti, A; Boffi, P; Martelli, P; Ferrario, M; Martinelli, M

2015-01-26

To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

CERN Document Server

Kerhervé, Eric

2015-01-01

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

DEFF Research Database (Denmark)

Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

2017-01-01

is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

[Investigation methodology and application on scientific and technological personnel of traditional Chinese medical resources based on data from Chinese scientific research paper].

Science.gov (United States)

Li, Hai-yan; Li, Yuan-hai; Yang, Yang; Liu, Fang-zhou; Wang, Jing; Tian, Ye; Yang, Ce; Liu, Yang; Li, Meng; Sun Li-ying

2015-12-01

The aim of this study is to identify the present status of the scientific and technological personnel in the field of traditional Chinese medicine (TCM) resource science. Based on the data from Chinese scientific research paper, an investigation regarding the number of the personnel, the distribution, their output of paper, their scientific research teams, high-yield authors and high-cited authors was conducted. The study covers seven subfields of traditional Chinese medicine identification, quality standard, Chinese medicine cultivation, harvest processing of TCM, market development and resource protection and resource management, as well as 82 widely used Chinese medicine species, such as Ginseng and Radix Astragali. One hundred and fifteen domain authority experts were selected based on the data of high-yield authors and high-cited authors. The database system platform "Skilled Scientific and Technological Personnel in the field of Traditional Chinese Medicine Resource Science-Chinese papers" was established. This platform successfully provided the retrieval result of the personnel, output of paper, and their core research team by input the study field, year, and Chinese medicine species. The investigation provides basic data of scientific and technological personnel in the field of traditional Chinese medicine resource science for administrative agencies and also evidence for the selection of scientific and technological personnel and construction of scientific research teams.

Fiscal 1993 R and D project for industrial science and technology. Report on results in developing methane-fueled aircraft engine (R and D on silicon-based polymeric material); 1993 nendo methane nenryo kokukiyo engine kaihatsu seika hokokusho. Keisokei kobunshi zairyo no gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1994-03-01

R and D was conducted on silicon-based polymeric materials for structural use, for the purpose of establishing fundamental technologies such as molecular design, synthesis, material forming and evaluation method concerning silicon-based polymers, with the fiscal 1993 results summarized. In the studies of synthesis technologies of silicon-based polymeric materials having a sea-island structure, a series of polymers with an Si-C main chain structure were prepared by ring-opening polymerization of the cyclic monomers. In the studies of interpenetrating polymer network (IPN) structure forming technologies, polycarbosilanes with superior thermal stability and solvent solubility were synthesized through structural control based on molecular design. In the studies of composite structural materials between organic metallic complex and silicon-based high polymer, the compounding was carried out by introducing or blending organic metallic complex into the main chain of silicon polymer, with evaluation made on the heat resistance. The studies of silicon polymer structural materials having a ring structure were conducted on high heat resistant polymers that were obtained by dehydrocoupling polymerization with magnesia as a catalyst. (NEDO)

Electric energy storage systems in a market-based economy. Comparison of emerging and traditional technologies

International Nuclear Information System (INIS)

Kazempour, S. Jalal; Moghaddam, M. Parsa; Haghifam, M.R.; Yousefi, G.R.

2009-01-01

Unlike markets for storable commodities, electricity markets depend on the real-time balance of supply and demand. Although much of the present-day grid operate effectively without storage technologies, cost-effective ways of storing electrical energy can make the grid more efficient and reliable. This work addresses an economic comparison between emerging and traditional Electric Energy Storage (EES) technologies in a competitive electricity market. In order to achieve this goal, an appropriate Self-Scheduling (SS) approach must first be developed for each of them to determine their maximum potential of expected profit among multi-markets such as energy and ancillary service markets. Then, these technologies are economically analyzed using Internal Rate of Return (IRR) index. Finally, the amounts of needed financial supports are determined for choosing the emerging technologies when an investor would like to invest on EES technologies. Among available EES technologies, we consider NaS battery (Natrium Sulfur battery) and pumped-storage plants as emerging and traditional technologies, respectively. (author)

Silicon based ultrafast optical waveform sampling

DEFF Research Database (Denmark)

Ji, Hua; Galili, Michael; Pu, Minhao

2010-01-01

A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker as th......A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode......-locker as the sampling source. A clear eye-diagram of a 320 Gbit/s data signal is obtained. The temporal resolution of the sampling system is estimated to 360 fs....

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Novel Non-Carbonate Based Electrolytes for Silicon Anodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, Ye [Wildcat Discovery Technologies, San Diego, CA (United States); Yang, Johnny [Wildcat Discovery Technologies, San Diego, CA (United States); Cheng, Gang [Wildcat Discovery Technologies, San Diego, CA (United States); Carroll, Kyler [Wildcat Discovery Technologies, San Diego, CA (United States); Clemons, Owen [Wildcat Discovery Technologies, San Diego, CA (United States); Strand, Diedre [Wildcat Discovery Technologies, San Diego, CA (United States)

2016-09-09

Substantial improvement in the energy density of rechargeable lithium batteries is required to meet the future needs for electric and plug-in electric vehicles (EV and PHEV). Present day lithium ion battery technology is based on shuttling lithium between graphitic carbon and inorganic oxides. Non-graphitic anodes, such as silicon can provide significant improvements in energy density but are currently limited in cycle life due to reactivity with the electrolyte. Wildcat/3M proposes the development of non-carbonate electrolyte formulations tailored for silicon alloy anodes. Combining these electrolytes with 3M’s anode and an NMC cathode will enable up to a 20% increase in the volumetric cell energy density, while still meeting the PHEV/EV cell level cycle/calendar life goals.

Millimeter-wave silicon-based ultra-wideband automotive radar transceivers

Science.gov (United States)

Jain, Vipul

Since the invention of the integrated circuit, the semiconductor industry has revolutionized the world in ways no one had ever anticipated. With the advent of silicon technologies, consumer electronics became light-weight and affordable and paved the way for an Information-Communication-Entertainment age. While silicon almost completely replaced compound semiconductors from these markets, it has been unable to compete in areas with more stringent requirements due to technology limitations. One of these areas is automotive radar sensors, which will enable next-generation collision-warning systems in automobiles. A low-cost implementation is absolutely essential for widespread use of these systems, which leads us to the subject of this dissertation---silicon-based solutions for automotive radars. This dissertation presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors. The first CMOS 22-29-GHz pulse-radar receiver front-end for ultra-wideband radars is presented. The chip includes a low noise amplifier, I/Q mixers, quadrature voltage-controlled oscillators, pulse formers and variable-gain amplifiers. Fabricated in 0.18-mum CMOS, the receiver achieves a conversion gain of 35-38.1 dB and a noise figure of 5.5-7.4 dB. Integration of multi-mode multi-band transceivers on a single chip will enable next-generation low-cost automotive radar sensors. Two highly-integrated silicon ICs are designed in a 0.18-mum BiCMOS technology. These designs are also the first reported demonstrations of mm-wave circuits with high-speed digital circuits on the same chip. The first mm-wave dual-band frequency synthesizer and transceiver, operating in the 24-GHz and 77-GHz bands, are demonstrated. All

Gas phase photocatalytic water splitting in silicon based µ-reactors

DEFF Research Database (Denmark)

Dionigi, Fabio; Vesborg, Peter Christian Kjærgaard

is discussed in the beginning of this thesis followed by an introduction to the basics of photocatalysis. The experimental setup used in this study and the silicon based μ-reactor technology is described afterwards. Almost the entire work presented in the thesis has been done loading the catalysts in these μ...

Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology

International Nuclear Information System (INIS)

Servanton, G; Clement, L; Lepinay, K; Lorut, F; Pantel, R; Pofelski, A; Bicais, N

2013-01-01

The growing demand for wireless multimedia applications (smartphones, tablets, digital cameras) requires the development of devices combining both high speed performances and low power consumption. A recent technological breakthrough making a good compromise between these two antagonist conditions has been proposed: the 28-14nm CMOS transistor generations based on a fully-depleted Silicon-on-Insulator (FD-SOI) performed on a thin Si film of 5-6nm. In this paper, we propose to review the TEM characterization challenges that are essential for the development of extremely power-efficient System on Chip (SoC)

Last Advances in Silicon-Based Optical Biosensors

Directory of Open Access Journals (Sweden)

Adrián Fernández Gavela

2016-02-01

Full Text Available We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

Last Advances in Silicon-Based Optical Biosensors.

Science.gov (United States)

Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C; Lechuga, Laura M

2016-02-24

We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

Report for fiscal 1998 on results of research and development of silicon-based polymeric material; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The research and development of 'silicon-based polymeric materials' has been implemented under ten year plan since 1991 by the research and development system for industrial science and technology, with the following subjects conducted in the general accounting section of fiscal 1998. In the research and development of the synthetic technology of electrically conductive silicon-based polymeric materials, a synthetic method was established for unsaturated side-chain group polysilanes as a basic structural unit for structuring multidimensions. In the research and development of the synthetic technology of new silicon-based polymeric materials capable of plotting circuits, network-shaped polysilanes with various amino groups introduced were synthesized, for which electrical conductivity and temperature dependency were measured. In the research and development of new silicon-based polymeric materials with an electro-luminous function and the like, polymeric synthesis began developing smoothly that has hole-transporting and electron transporting properties concerning the electro-luminous function. In the research and development of silicon-based photoelectric conversion materials, examination was made on the improvement of photoelectric conversion performance by materialization technology including lamination and mixture. The general investigation and research committee contrived further advancement of the research and development. (NEDO)

Silicon sensor technologies for ATLAS IBL upgrade

CERN Document Server

Grenier, P; The ATLAS collaboration

2011-01-01

New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

NARCIS (Netherlands)

Vereshchagina, E.

2011-01-01

In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

Achievement report for fiscal 1997 on development of practical application technology for photovoltaic power generation systems. Development of technologies to manufacture thin film solar cells (development of technologies to manufacture silicon crystal based high-quality materials and substrates / survey and research on analysis of practical application); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (zairyo kiban seizo gijutsu kaihatsu / silicon kesshokei kohinshitsu zairyo kiban no seizo gijutsu kaihatsu (jitsuyoka kaiseki ni kansuru chosa kenkyu))

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

As a plan to develop technologies to manufacture materials and substrates for thin film solar cells, it is intended to reduce defect density, enhance film forming speed, largely improve the photo-electric conversion efficiency and increase manufacturing productivity. These goals will be realized by establishing methods to control defect density, crystal particle diameters and crystallization rate in silicon crystal systems. A technology to form micro-crystal silicon-based thin films will be developed, that have superior photo-stability, and are capable of realizing low cost and mass production. Discussions will be given on a high-density plasma control technology, a fundamental property evaluation technology for micro crystal silicon thin films, and a device design simulation technology. A technology will be developed to form amorphous silicon layer on a stainless steel substrate by using the plasma CVD process. At the same time, discussions will be given on optical annealing and thermal annealing as reformation methods. Fiscal 1997 has surveyed component technologies to identify and analyze quickly and accurately the technical trends inside and outside the country, and to mass produce thin film solar cells. The Material and Substrate System Technology Subcommittee (silicon crystals) was held to deliberate the four-year development program and its progress. (NEDO)

Clinical evaluation comparing the fit of all-ceramic crowns obtained from silicone and digital intraoral impressions based on wavefront sampling technology.

Science.gov (United States)

Pradíes, Guillermo; Zarauz, Cristina; Valverde, Arelhys; Ferreiroa, Alberto; Martínez-Rus, Francisco

2015-02-01

The aim of this study was to compare the fit of ceramic crowns fabricated from conventional silicone impressions with the fit of ceramic crowns fabricated from intraoral digital impressions. Twenty-five participants with 30 posterior teeth with a prosthetic demand were selected for the study. Two crowns were made for each preparation. One crown was fabricated from an intraoral digital impression system (IDI group) and the other crown was fabricated from a conventional two-step silicone impression (CI group). To replicate the interface between the crown and the preparation, each crown was cemented on its corresponding clinical preparation with ultra-flow silicone. Each crown was embedded in acrylic resin to stabilise the registered interface and then cut in 2mm thick slices in a buco-lingual orientation. The internal gap was determined as the vertical distance from the internal surface of the crown to the prepared tooth surface at four points (marginal gap, axial gap, crest gap, and occlusal fossa gap) using stereomicroscopy with a magnification of 40×. Data was analysed by using Wilcoxon signed rank test (α=0.05). Internal adaptation values were significantly affected by the impression technique (p=0.001). Mean marginal gap was 76.33 ± 65.32 μm for the crowns of the IDI group and 91.46 ± 72.17 μm for the CI group. All-ceramic crowns fabricated from intraoral digital impressions with wavefront sampling technology demonstrated better internal fit than crowns manufactured from silicone impressions. Impressions obtained from an intraoral digital scanner based on wavefront sampling technology can be used for manufacturing ceramic crowns in the normal clinical practice with better results than conventional impressions with elastomers. Copyright © 2014 Elsevier Ltd. All rights reserved.

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

International Nuclear Information System (INIS)

Chen, Chao-Nan; Huang, Jung-Jie

2013-01-01

This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

Silicon-based optical integrated circuits for terabit communication networks

International Nuclear Information System (INIS)

Svidzinsky, K K

2003-01-01

A brief review is presented of the development of silicon-based optical integrated circuits used as components in modern all-optical communication networks with the terabit-per-second transmission capacity. The designs and technologies for manufacturing these circuits are described and the problems related to their development and application in WDM communication systems are considered. (special issue devoted to the memory of academician a m prokhorov)

Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

Science.gov (United States)

Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

2017-11-01

The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

The Use of Omic Technologies Applied to Traditional Chinese Medicine Research

Directory of Open Access Journals (Sweden)

Dalinda Isabel Sánchez-Vidaña

2017-01-01

Full Text Available Natural products represent one of the most important reservoirs of structural and chemical diversity for the generation of leads in the drug development process. A growing number of researchers have shown interest in the development of drugs based on Chinese herbs. In this review, the use and potential of omic technologies as powerful tools in the modernization of traditional Chinese medicine are discussed. The analytical combination from each omic approach is crucial for understanding the working mechanisms of cells, tissues, organs, and organisms as well as the mechanisms of disease. Gradually, omic approaches have been introduced in every stage of the drug development process to generate high-quality Chinese medicine-based drugs. Finally, the future picture of the use of omic technologies is a promising tool and arena for further improvement in the modernization of traditional Chinese medicine.

Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

Science.gov (United States)

Gostimirovic, Dusan; Ye, Winnie N.

2016-03-01

For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

Translating silicon nanowire BioFET sensor-technology to embedded point-of-care medical diagnostics

DEFF Research Database (Denmark)

Pfreundt, Andrea; Zulfiqar, Azeem; Patou, François

2013-01-01

Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need to be de......Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need...... to be detected. However, in order to translate this technology from the bench to the bedside, a number of key issues need to be taken into consideration: Integrating nanobiosensors-based technology requires to overcome the difficult tradeoff between imperatives for high device reproducibilty and associated...... rising fabrication costs. Also the translation of nano-scale sensor technology into daily-use point-of-care devices requires acknowledgement of the end-user requirements, making device portability and human-interfacing a focus point in device development. Sample handling or purification for instance...

Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

Science.gov (United States)

Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

2016-03-21

Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

Energy Technology Data Exchange (ETDEWEB)

O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

2001-01-01

Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Traditional Chinese food technology and cuisine.

Science.gov (United States)

Li, Jian-rong; Hsieh, Yun-Hwa P

2004-01-01

From ancient wisdom to modern science and technology, Chinese cuisine has been established from a long history of the country and gained a global reputation of its sophistication. Traditional Chinese foods and cuisine that exhibit Chinese culture, art and reality play an essential role in Chinese people's everyday lives. Recently, traditional Chinese foods have drawn a great degree of attention from food scientists and technologists, the food industry, and health promotion institutions worldwide due to the extensive values they offer beyond being merely another ethnic food. These traditional foods comprise a wide variety of products, such as pickled vegetables, salted fish and jellyfish, tofu and tofu derived products, rice and rice snack foods, fermented sauces, fish balls and thousand-year-old eggs. An overview of selected popular traditional Chinese foods and their processing techniques are included in this paper. Further development of the traditional techniques for formulation and production of these foods is expected to produce economic, social and health benefits.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Silicon ribbon technology assessment 1978-1986 - A computer-assisted analysis using PECAN

Science.gov (United States)

Kran, A.

1978-01-01

The paper presents a 1978-1986 economic outlook for silicon ribbon technology based on the capillary action shaping technique. The outlook is presented within the framework of two sets of scenarios, which develop strategy for approaching the 1986 national energy capacity cost objective of $0.50/WE peak. The PECAN (Photovoltaic Energy Conversion Analysis) simulation technique is used to develop a 1986 sheet material price ($50/sq m) which apparently can be attained without further scientific breakthrough.

Multi-Course Comparison of Traditional versus Web-Based Course Delivery Systems

Science.gov (United States)

Weber, J. Michael; Lennon, Ron

2007-01-01

The purpose of this paper is to measure and compare the effectiveness of a Web-based course delivery system to a traditional course delivery system. The results indicate that a web-based course is effective and equivalent to a traditional classroom environment. As with the implementation of all new technologies, there are some pros and cons that…

Traditional methods v. new technologies – dilemmas for dietary assessment in large-scale nutrition surveys and studies

DEFF Research Database (Denmark)

Amoutzopoulos, B.; Steer, T.; Roberts, C.

2018-01-01

assessment in population surveys’, was held at the 9th International Conference on Diet and Activity Methods (ICDAM9), Brisbane, September 2015. Despite respondent and researcher burden, traditional methods have been most commonly used in nutrition surveys. However, dietary assessment technologies offer...... of traditional dietary assessment methods (food records, FFQ, 24 h recalls, diet history with interviewer-assisted data collection) v. new technology-based dietary assessment methods (web-based and mobile device applications). The panel discussion ‘Traditional methods v. new technologies: dilemmas for dietary......The aim of the present paper is to summarise current and future applications of dietary assessment technologies in nutrition surveys in developed countries. It includes the discussion of key points and highlights of subsequent developments from a panel discussion to address strengths and weaknesses...

Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

Science.gov (United States)

Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

2014-03-01

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Novel fabrication of silicon carbide based ceramics for nuclear applications

Science.gov (United States)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

An overview of crystalline silicon solar cell technology: Past, present, and future

Science.gov (United States)

Sopian, K.; Cheow, S. L.; Zaidi, S. H.

2017-09-01

Crystalline silicon (c-Si) solar cell, ever since its inception, has been identified as the only economically and environmentally sustainable renewable resource to replace fossil fuels. Performance c-Si based photovoltaic (PV) technology has been equal to the task. Its price has been reduced by a factor of 250 over last twenty years (from ˜ 76 USD to ˜ 0.3 USD); its market growth is expected to reach 100 GWP by 2020. Unfortunately, it is still 3-4 times higher than carbon-based fuels. With the matured PV manufacturing technology as it exists today, continuing price reduction poses stiff challenges. Alternate manufacturing approaches in combination with thin wafers, low (< 10 x) optical enhancement with Fresnel lenses, band-gap engineering for enhanced optical absorption, and newer, advanced solar cell configurations including partially transparent bifacial and back contact solar cells will be required. This paper will present a detailed, cost-based analysis of advanced solar cell manufacturing technologies aimed at higher (˜ 22 %) efficiency with existing equipment and processes.

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

FY 1991 Report on the results of the research and development of silicon-based high-molecular-weight materials; 1991 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1992-03-01

The research and development project has been started to establish the basic technologies for molecular designs, synthesis, material production and evaluation of silicon-based high-molecular-weight materials expected to exhibit excellent characteristics, e.g., electro-optical functions, resistance to heat, flame retardance and mechanical properties. The efforts in FY 1991, the first year for the 10-year project, are mainly directed to the surveys on the R and D trends, both domestic and foreign, to clarify the relationship between the structures and functions/properties. The R and D projects followed include the technologies for synthesizing (1) electroconductive silicon-based high-molecular-weight materials, (2) novel silicon-based high-molecular-weight materials capable of drawing circuits, (3) novel, light-emitting silicon-based high-molecular-weight materials and (4) silicon-based opto-electric conversion materials for the electro-optical functional high-molecular-weight materials; and (1) synthesis of high-molecular-weight structural materials of sea island structure, (2) technologies for forming inter-penetrating type structures (IPN), (3) development of composite structural materials of organometallic complex and silicon-based high-molecular-weight material, and (4) development of silicon-based high-molecular-weight materials of ring structure for the high-molecular-weight structural materials. (NEDO)

PECVD silicon carbide surface micromachining technology and selected MEMS applications

NARCIS (Netherlands)

Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

2011-01-01

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Surface Passivation for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Deligiannis, D.

2017-01-01

Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

Consumer demand : e-commerce or traditional technologies

OpenAIRE

Burinskienė, Aurelija; Burinskas, Arūnas

2012-01-01

The application of e-commerce technologies is associated with more efficient purchasing system. The research combines both: the application of e-commerce technologies by consumers and economic efficiency of such application. The research is aimed to propose profile, which can be used to identify cases when it is worth enough to choose e-commerce technologies instead of traditional ones. The paper presents new cash-flow model, which can be applied to evaluate efficiency when e-commerce technol...

[Near infrared spectroscopy based process trajectory technology and its application in monitoring and controlling of traditional Chinese medicine manufacturing process].

Science.gov (United States)

Li, Wen-Long; Qu, Hai-Bin

2016-10-01

In this paper, the principle of NIRS (near infrared spectroscopy)-based process trajectory technology was introduced.The main steps of the technique include:① in-line collection of the processes spectra of different technics; ② unfolding of the 3-D process spectra;③ determination of the process trajectories and their normal limits;④ monitoring of the new batches with the established MSPC (multivariate statistical process control) models.Applications of the technology in the chemical and biological medicines were reviewed briefly. By a comprehensive introduction of our feasibility research on the monitoring of traditional Chinese medicine technical process using NIRS-based multivariate process trajectories, several important problems of the practical applications which need urgent solutions are proposed, and also the application prospect of the NIRS-based process trajectory technology is fully discussed and put forward in the end. Copyright© by the Chinese Pharmaceutical Association.

Fiscal 1997 project on the R and D of industrial scientific technology under consignment from NEDO. Report on the results of the R and D of silicon-based polymeric materials (development of liquid methane fueled aircraft engine); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo / Shin energy Sangyo gijutsu Sogo Kaihatsu Kiko itaku. Keisokei kobunshi zairyo no kenkyu kaihatsu (methane nenryo kokukiyo engine kaihatsu) seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This R and D aims at establishing the basic technology on the molecular design, synthesis, use as materials, and evaluation of silicon-based polymers, of which excellent electronic/optical functions, high heat-resistance/combustion-resistance/dynamic characteristic are expected. The paper introduced the results of the fiscal 1997 R and D of them. The themes are as follows: technology of synthesis of silicon-based polymeric materials with sea-island microstructures, interstitial type structure forming technology, composite materials with organometallic complexes and silicon-based polymers, silicon-based polymer structural materials with ring structures, optimization of the Wurtz`s synthesis method of silicon-based polymers, unsaturated and hypercoordinate organosilicic compounds, function of silicon-based polymers, synthesis and polymerization of new silicon-based monomers, development of a new synthesis method of polysilane and the function, development of new application of silicon-based polymers in imaging devices for recording/memory/display of information, molecular design of {pi}-conjugate and {sigma}-conjugate compounds including silicon, and conformation and electronic state of silicon-based polymeric materials. 186 refs., 141 figs., 68 tabs.

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

Science.gov (United States)

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

[Application of digital earth technology in research of traditional Chinese medicine resources].

Science.gov (United States)

Liu, Jinxin; Liu, Xinxin; Gao, Lu; Wei, Yingqin; Meng, Fanyun; Wang, Yongyan

2011-02-01

This paper describes the digital earth technology and its core technology-"3S" integration technology. The advance and promotion of the "3S" technology provide more favorable means and technical support for Chinese medicine resources survey, evaluation and appropriate zoning. Grid is a mature and popular technology that can connect all kinds of information resources. The author sums up the application of digital earth technology in the research of traditional Chinese medicine resources in recent years, and proposes the new method and technical route of investigation in traditional Chinese medicine resources, traditional Chinese medicine zoning and suitability assessment by combining the digital earth technology and grid.

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Research on the Application of Traditional Embroidery Technology in Modern Jewelry Creation

Directory of Open Access Journals (Sweden)

Min Li

2017-10-01

Full Text Available Tradition and modernity are the eternal topics of art, especially in the age of information.Efficient mechanical production methods to improve the traditional jewelry production process, which achieved the demand for mass production of jewelry.However, with the development of society and the progress of science and technology,  many traditional arts and crafts are lost.From the traditional culture, this paper analyzes the work of embroidery jewelry by studying the traditional Chinese embroidery culture and technique, summarizes the traditional embroidery technology and modern jewelry design techniques combined approach to guide the creative practice.On the basis of studying the theoretical method of combining traditional embroidery technology with modern jewelry, this paper focuses on the application of traditional embroidery techniques in jewelry creation, inspire the potential of traditional craft, to provide reference for modern jewelry design rich Chinese characteristics and attract the attention of  Chinese jewelry industry and inherit the traditional arts.

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Development of Silicon-substrate Based Fabry-Perot Etalons for far-IR Astrophysics

Science.gov (United States)

Stacey, Gordon

We propose to design, construct and test silicon-substrate-based (SSB) mirrors necessary for high performance Fabry-Perot interferometers (FPIs) to be used in the 25-40 um mid-IR band. These mirrors will be fabricated from silicon wafers that are anti-reflection coated (ARC) by micromachining an artificial dielectric meta-material on one side, and depositing optimized gold-metalized patterns on the other. Two mirrors with the metalized surfaces facing one-another form the Fabry-Perot cavity, also known as the FPI etalon. The exterior surfaces of the silicon mirrors are anti-reflection coated for both good transmission in the science band, and to prevent unwanted parasitic FPI cavities from forming between the four surfaces (one anti-reflection coated, one metalized for each mirror) of the FPI etalon. The mirrors will be tested within a Miniature Cryogenic Scanning Fabry-Perot (MCSF) that we have designed through support of a previous NASA grant (NNX09AB95G). This design is based on our long experience in constructing and using scanning FPI in the mid-IR to submm range, and fits within test-beds we have on hand that are suitable for both warm and cold tests. The key technologies are the ARC and tuned mirrors that are enabled by silicon nano-machining techniques. The creation of these SSB mirrors promises greatly improved performance over previous versions of mid-IR to submm-band FPIs that are based on mirrors made from free-standing metal mesh stretched over support rings. Performance is improved both structurally and in terms of sensitivity, and is measured as the product of the cavity finesse times transmission. Our electromagnetic modeling suggests that SSB mirrors will improve this product by a factor of 2 over the best free standing mesh etalons available. This translates into a factor of sqrt(2) improvement in sensitivity per etalon, or a full factor of 2 when used in a tandem (dual etalon) FPI spectrometer. The SSB improvements are due to both the stiff (~ 0

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

International Nuclear Information System (INIS)

Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

2016-01-01

The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

Strain-induced generation of silicon nanopillars

International Nuclear Information System (INIS)

Bollani, Monica; Osmond, Johann; Nicotra, Giuseppe; Spinella, Corrado; Narducci, Dario

2013-01-01

Silicon metal-assisted chemical etching (MACE) is a nanostructuring technique exploiting the enhancement of the silicon etch rate at some metal–silicon interfaces. Compared to more traditional approaches, MACE is a high-throughput technique, and it is one of the few that enables the growth of vertical 1D structures of virtually unlimited length. As such, it has already found relevant technological applications in fields ranging from energy conversion to biosensing. Yet, its implementation has always required metal patterning to obtain nanopillars. Here, we report how MACE may lead to the formation of porous silicon nanopillars even in the absence of gold patterning. We show how the use of inhomogeneous yet continuous gold layers leads to the generation of a stress field causing spontaneous local delamination of the metal—and to the formation of silicon nanopillars where the metal disruption occurs. We observed the spontaneous formation of nanopillars with diameters ranging from 40 to 65 nm and heights up to 1 μm. Strain-controlled generation of nanopillars is consistent with a mechanism of silicon oxidation by hole injection through the metal layer. Spontaneous nanopillar formation could enable applications of this method to contexts where ordered distributions of nanopillars are not required, while patterning by high-resolution techniques is either impractical or unaffordable. (paper)

Imprinted silicon-based nanophotonics

DEFF Research Database (Denmark)

Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

2007-01-01

We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

Seventh workshop on the role of impurities and defects in silicon device processing

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-08-01

This workshop is the latest in a series which has looked at technological issues related to the commercial development and success of silicon based photovoltaic (PV) modules. PV modules based on silicon are the most common at present, but face pressure from other technologies in terms of cell performance and cell cost. This workshop addresses a problem which is a factor in the production costs of silicon based PV modules.

George E. Pake Prize Lecture: CMOS Technology Roadmap: Is Scaling Ending?

Science.gov (United States)

Chen, Tze-Chiang (T. C.)

The development of silicon technology has been based on the principle of physics and driven by the system needs. Traditionally, the system needs have been satisfied by the increase in transistor density and performance, as suggested by Moore's Law and guided by ''Dennard CMOS scaling theory''. As the silicon industry moves towards the 14nm node and beyond, three of the most important challenges facing Moore's Law and continued CMOS scaling are the growing standby power dissipation, the increasing variability in device characteristics and the ever increasing manufacturing cost. Actually, the first two factors are the embodiments of CMOS approaching atomistic and quantum-mechanical physics boundaries. Industry directions for addressing these challenges are also developing along three primary approaches: Extending silicon scaling through innovations in materials and device structure, expanding the level of integration through three-dimensional structures comprised of through-silicon-vias holes and chip stacking in order to enhance functionality and parallelism and exploring post-silicon CMOS innovation with new nano-devices based on distinctly different principles of physics, new materials and new processes such as spintronics, carbon nanotubes and nanowires. Hence, the infusion of new materials, innovative integration and novel device structures will continue to extend CMOS technology scaling for at least another decade.

Surface etching technologies for monocrystalline silicon wafer solar cells

Science.gov (United States)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

An Educational Kit Based On a Modular Silicon Photomultiplier System

International Nuclear Information System (INIS)

Caccia, Massimo; Chmill, Valery; Ebolese, Amedeo; Martemyanov, Alexander; Risigo, Fabio; Santoro, Romualdo; Locatelli, Marco; Pieracci, Maura; Tintori, Carlo

2013-06-01

Silicon Photo-Multipliers (SiPM) are state of the art light detectors with unprecedented single photon sensitivity and photon number resolving capability, representing a breakthrough in several fundamental and applied Science domains. An educational experiment based on a SiPM set-up is proposed in this article, guiding the student towards a comprehensive knowledge of this sensor technology while experiencing the quantum nature of light and exploring the statistical properties of the light pulses emitted by a LED. (authors)

Comparison of Fit of Dentures Fabricated by Traditional Techniques Versus CAD/CAM Technology.

Science.gov (United States)

McLaughlin, J Bryan; Ramos, Van; Dickinson, Douglas P

2017-11-14

To compare the shrinkage of denture bases fabricated by three methods: CAD/CAM, compression molding, and injection molding. The effect of arch form and palate depth was also tested. Nine titanium casts, representing combinations of tapered, ovoid, and square arch forms and shallow, medium, and deep palate depths, were fabricated using electron beam melting (EBM) technology. For each base fabrication method, three poly(vinyl siloxane) impressions were made from each cast, 27 dentures for each method. Compression-molded dentures were fabricated using Lucitone 199 poly methyl methacrylate (PMMA), and injection molded dentures with Ivobase's Hybrid Pink PMMA. For CAD/CAM, denture bases were designed and milled by Avadent using their Light PMMA. To quantify the space between the denture and the master cast, silicone duplicating material was placed in the intaglio of the dentures, the titanium master cast was seated under pressure, and the silicone was then trimmed and recovered. Three silicone measurements per denture were recorded, for a total of 243 measurements. Each silicone measurement was weighed and adjusted to the surface area of the respective arch, giving an average and standard deviation for each denture. Comparison of manufacturing methods showed a statistically significant difference (p = 0.0001). Using a ratio of the means, compression molding had on average 41% to 47% more space than injection molding and CAD/CAM. Comparison of arch/palate forms showed a statistically significant difference (p = 0.023), with shallow palate forms having more space with compression molding. The ovoid shallow form showed CAD/CAM and compression molding had more space than injection molding. Overall, injection molding and CAD/CAM fabrication methods produced equally well-fitting dentures, with both having a better fit than compression molding. Shallow palates appear to be more affected by shrinkage than medium or deep palates. Shallow ovoid arch forms appear to benefit from

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Using silicone technology to maintain healthy skin in stoma care.

Science.gov (United States)

White, Maddie

The use of silicone in stoma care has grown in recent years and may be considered the next step in the revolutionary development of stoma-care products. Clinical nurse specialists aim to provide evidence-based care at all times, and the same is true for stoma-care nurses. Preventing harm by choosing products that have a sound research base provides the patients with up-to-date, quality care, which enables them to adapt to life with a stoma and return to 'normal' functioning. This article explores the issue of peristomal skin problems and the development of silicone products, and highlights scenarios where it could be an advantage to choose a silicone product.

Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

Energy Technology Data Exchange (ETDEWEB)

Rentsch, J.

2005-04-15

Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

Science.gov (United States)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

International Nuclear Information System (INIS)

Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

2008-01-01

Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

Micromachined silicon seismic accelerometer development

Energy Technology Data Exchange (ETDEWEB)

Barron, C.C.; Fleming, J.G.; Montague, S. [and others

1996-08-01

Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Silicon-based sleeve devices for chemical reactions

Science.gov (United States)

Northrup, M. Allen; Mariella, Jr., Raymond P.; Carrano, Anthony V.; Balch, Joseph W.

1996-01-01

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k0-standardization method. Development of irradiation silicon technology in productivity using research reactor (Joint research)

International Nuclear Information System (INIS)

Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro; Kawasaki, Kozo; Onizawa, Koji; Isshiki, Masahiko

2009-07-01

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process, which is a method to produce a high quality semiconductor. The domestic supply of NTD-Si is insufficient for the demand, and the market of NTD-Si is significantly growing at present. It is very important to increase achieve the production. To fulfill the requirement, we have been investigating a neutron filter, which is made of high-purity-titanium, for uniform doping. Silicon-carbide (SiC) semiconductor doped with NTD technology is considered suitable for high power devices with superior performances to conventional Si-based devices. We are very interested in the SiC as well. This report presents the results obtained after the impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k 0 -standardization method. There were 6 and 9 impurity elements detected from the high-purity-titanium and SiC, respectively. Among those Sc from the high-purity-titanium and Fe from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials. (author)

Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

Energy Technology Data Exchange (ETDEWEB)

Galperin, V. A.; Kitsyuk, E. P. [“Technological Center” Research-and-Production Company (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation); Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru [“Technological Center” Research-and-Production Company (Russian Federation)

2015-12-15

New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

Economic assessment of possible electron accelerator applications in curing silicon rubber based electric installation material

International Nuclear Information System (INIS)

Rmot, L.

1976-01-01

A description is given of the conventional technology of production of conductors with silicon rubber insulation and of the radiation vulcanization method, i.e., the radiation cross-linking of silicon rubber. An economic comparison is shown for both technologies. The analysis shows that the indices for the radiation cross-linking technology are favourable and that the introduction thereof would be advantageous. (J.P.)

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Metallisation Technology of Silicon Solar Cells Using the Convectional and Laser Technique

Directory of Open Access Journals (Sweden)

Leszek A. Dobrzanski

2013-07-01

Full Text Available The aim of the paper was to optimize the Selective Laser Sintering (SLS and co-firing in the infrared conveyor furnace parameters in front Screen Printed (SP contacts. The co-firing in the infrared conveyor furnace was carried out at various temperature. The SLS was carried out at various a laser beam, scanning speed of the laser beam and front electrode thickness. The investigations were carried out on monocrystalline silicon wafers. During investigations was applied a silver powder with the grain size of 40 μm. The contacts parameters are obtained according to the Transmission Line Model (TLM measurements. Firstly, this paper shows the comparison between the convectional an unconventional method of manufacturing front contacts of monocrystalline silicon solar cells with the different morphology of silicon for comparative purposes. Secondly, the papers shows technological recommendations for both methods in relation to parameters such as: the optimal paste composition, the morphology of the silicon substrate to produce the front electrode of silicon solar cells, which were selected experimentally in order to produce a uniformly melted structure, well adhering to the substrate, with the low resistance of the front electrode-to-substrate joint zone.

Visualizing a silicon quantum computer

International Nuclear Information System (INIS)

Sanders, Barry C; Hollenberg, Lloyd C L; Edmundson, Darran; Edmundson, Andrew

2008-01-01

Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

Visualizing a silicon quantum computer

Science.gov (United States)

Sanders, Barry C.; Hollenberg, Lloyd C. L.; Edmundson, Darran; Edmundson, Andrew

2008-12-01

Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

Visualizing a silicon quantum computer

Energy Technology Data Exchange (ETDEWEB)

Sanders, Barry C [Institute for Quantum Information Science, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); Hollenberg, Lloyd C L [ARC Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Victoria 3010 (Australia); Edmundson, Darran; Edmundson, Andrew [EDM Studio Inc., Level 2, 850 16 Avenue SW, Calgary, Alberta T2R 0S9 (Canada)], E-mail: bsanders@qis.ucalgary.ca, E-mail: lloydch@unimelb.edu.au, E-mail: darran@edmstudio.com

2008-12-15

Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

A sunny future: expert elicitation of China's solar photovoltaic technologies

Science.gov (United States)

Lam, Long T.; Branstetter, Lee; Azevedo, Inês L.

2018-03-01

China has emerged as the global manufacturing center for solar photovoltaic (PV) products. Chinese firms have entered all stages of the supply chain, producing most of the installed solar modules around the world. Meanwhile, production costs are at record lows. The decisions that Chinese solar producers make today will influence the path for the solar industry and its role towards de-carbonization of global energy systems in the years to come. However, to date, there have been no assessments of the future costs and efficiency of solar PV systems produced by the Chinese PV industry. We perform an expert elicitation to assess the technological and non-technological factors that led to the success of China’s silicon PV industry as well as likely future costs and performance. Experts evaluated key metrics such as efficiency, costs, and commercial viability of 17 silicon and non-silicon solar PV technologies by 2030. Silicon-based technologies will continue to be the mainstream product for large-scale electricity generation application in the near future, with module efficiency reaching as high as 23% and production cost as low as 0.24/W. The levelized cost of electricity for solar will be around 34/MWh, allowing solar PV to be competitive with traditional energy resources like coal. The industry’s future developments may be affected by overinvestment, overcapacity, and singular short-term focus.

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Photonic Crystal Sensors Based on Porous Silicon

Directory of Open Access Journals (Sweden)

Claudia Pacholski

2013-04-01

Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Photonic Crystal Sensors Based on Porous Silicon

Science.gov (United States)

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

Science.gov (United States)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

Science.gov (United States)

Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

2001-04-01

We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

CERN Document Server

Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

2014-01-01

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

Silicon-Based Detectors at the HL-LHC

CERN Document Server

Hartmann, Frank

2018-01-01

This document discusses the silicon-based detectors planned for the High Luminosity LHC. The special aspects to cope with the new environment and its challenges, e.g. very high radiation levels and very high instantaneous luminosity thus high pile-up, high occupancy and high data rates, are addressed. The different design choices of the detectors are put into perspective. Exciting topics like trackers, high granularity silicon-based calorimetry with novel 8~inch processing, fast timing and new triggers are described.

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Science.gov (United States)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency

EDITORIAL: Special issue on silicon photonics

Science.gov (United States)

Reed, Graham; Paniccia, Mario; Wada, Kazumi; Mashanovich, Goran

2008-06-01

The technology now known as silicon photonics can be traced back to the pioneering work of Soref in the mid-1980s (see, for example, Soref R A and Lorenzo J P 1985 Electron. Lett. 21 953). However, the nature of the research conducted today, whilst it builds upon that early work, is unrecognizable in terms of technology metrics such as device efficiency, device data rate and device dimensions, and even in targeted applications areas. Today silicon photonics is still evolving, and is enjoying a period of unprecedented attention in terms of research focus. This has resulted in orders-of-magnitude improvement in device performance over the last few years to levels many thought were impossible. However, despite the existence of the research field for more than two decades, silicon is still regarded as a 'new' optical material, one that is being manipulated and modified to satisfy the requirements of a range of applications. This is somewhat ironic since silicon is one of the best known and most thoroughly studied materials, thanks to the electronics industry that has made silicon its material of choice. The principal reasons for the lack of study of this 'late developer' are that (i) silicon is an indirect bandgap material and (ii) it does not exhibit a linear electro-optic (Pockels) effect. The former condition means that it is difficult to make a laser in silicon based on the intrinsic performance of the material, and consequently, in recent years, researchers have attempted to modify the material to artificially engineer the conditions for lasing to be viable (see, for example, the review text, Jalali B et al 2008 Silicon Lasers in Silicon Photonics: The State of the Art ed G T Reed (New York: Wiley)). The latter condition means that optical modulators are intrinsically less efficient in silicon than in some other materials, particularly when targeting the popular telecommunications wavelengths around 1.55 μm. Therefore researchers have sought alternative

Electroplasma coatings based on silicon-containing hydroxyapatite: Technology and properties

Science.gov (United States)

Lyasnikova, A. V.; Markelova, O. A.

2016-09-01

IR analysis and the plasma deposition of silicon-containing hydroxyapatite powder have been carried out. It has been shown that the coating exhibits developed morphology and consists of molten powder (including nanosize) particles uniformly distributed over the entire surface. The adhesion characteristics have been calculated and scanning electron microscope images of the resultant coating have been analyzed.

Silicon-Germanium Front-End Electronics for Space-Based Radar Applications

Data.gov (United States)

National Aeronautics and Space Administration — Over the past two decades, Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology has emerged as a strong platform for high-frequency...

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

Graphene devices based on laser scribing technology

Science.gov (United States)

Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-04-01

Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

Science.gov (United States)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

1994-12-01

Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

Manufacturing technologies for photovoltaics and possible means of their development in Russia (Review). Part 1: General approach to the development of photoelectric converters and basic silicon technologies

Science.gov (United States)

Tarasenko, A. B.; Popel', O. S.

2015-11-01

The state and key tendencies of the development of basic technologies for manufacture of photoelectric converters (PECs) in the world are considered, and their advantages and disadvantages are discussed. The first part of the review gives short information on the development of photovoltaics in the world and planes of the development of solar power plants in Russia. Total power of photoelectric plants operating in various countries in 2015 exceeded 150 GW and increased in the last ten years with a rate of approximately 50% per year. Russia made important state decisions on the support of the development of renewable power engineering and developed mechanisms, which were attractive for business, on the stimulation of building of the network of solar power plants with a total power to 1.5 GW in the country to 2020. At the same time, the rigid demands are made with respect to the localization of the production of components of these plants that opens new abilities for the development of the domestic production of photovoltaics manufacture. Data on the efficiency of PECs of various types that are attained in the leading laboratories of the world are given. Particular emphasis has been placed on the consideration of basic silicon technologies of PEC manufacture, which had the widest commercial application. The basic methods for production of polycrystalline silicon and making single-crystal and multicrystal silicon are described. Fundamentals of making techniques for plates, PECs, and photoelectric modules based on single-crystal and polycrystalline silicon are considered. The second part will be devoted to modifications of manufacturing techniques for photoelectric converters, enhancement methods for contact structures, and recommendations of authors with respect to the choice of prospective technologies for the expansion of PEC production in Russia. It will involve formulations and substantiations of the most promising lines of the development of photoelectric

[Application of image recognition technology in census of national traditional Chinese medicine resources].

Science.gov (United States)

Zhang, Xiao-Bo; Ge, Xiao-Guang; Jin, Yan; Shi, Ting-Ting; Wang, Hui; Li, Meng; Jing, Zhi-Xian; Guo, Lan-Ping; Huang, Lu-Qi

2017-11-01

With the development of computer and image processing technology, image recognition technology has been applied to the national medicine resources census work at all stages.Among them: ①In the preparatory work, in order to establish a unified library of traditional Chinese medicine resources, using text recognition technology based on paper materials, be the assistant in the digitalization of various categories related to Chinese medicine resources; to determine the representative area and plots of the survey from each census team, based on the satellite remote sensing image and vegetation map and other basic data, using remote sensing image classification and other technical methods to assist in determining the key investigation area. ②In the process of field investigation, to obtain the planting area of Chinese herbal medicine was accurately, we use the decision tree model, spectral feature and object-oriented method were used to assist the regional identification and area estimation of Chinese medicinal materials.③In the process of finishing in the industry, in order to be able to relatively accurately determine the type of Chinese medicine resources in the region, based on the individual photos of the plant, the specimens and the name of the use of image recognition techniques, to assist the statistical summary of the types of traditional Chinese medicine resources. ④In the application of the results of transformation, based on the pharmaceutical resources and individual samples of medicinal herbs, the development of Chinese medicine resources to identify APP and authentic herbs 3D display system, assisted the identification of Chinese medicine resources and herbs identification characteristics. The introduction of image recognition technology in the census of Chinese medicine resources, assisting census personnel to carry out related work, not only can reduce the workload of the artificial, improve work efficiency, but also improve the census results

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

Science.gov (United States)

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

Science.gov (United States)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

Directory of Open Access Journals (Sweden)

BOLSHAKOV V. I.

2016-05-01

Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

A Microsystem Based on Porous Silicon-Glass Anodic Bonding for Gas and Liquid Optical Sensing

Directory of Open Access Journals (Sweden)

Ivo Rendina

2006-06-01

Full Text Available We have recently presented an integrated silicon-glass opto-chemical sensor forlab-on-chip applications, based on porous silicon and anodic bonding technologies. In thiswork, we have optically characterized the sensor response on exposure to vapors of severalorganic compounds by means of reflectivity measurements. The interaction between theporous silicon, which acts as transducer layer, and the organic vapors fluxed into the glasssealed microchamber, is preserved by the fabrication process, resulting in optical pathincrease, due to the capillary condensation of the vapors into the pores. Using theBruggemann theory, we have calculated the filled pores volume for each substance. Thesensor dynamic has been described by time-resolved measurements: due to the analysischamber miniaturization, the response time is only of 2 s. All these results have beencompared with data acquired on the same PSi structure before the anodic bonding process.

Full-color OLED on silicon microdisplay

Science.gov (United States)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

Science.gov (United States)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Amorphous silicon-based microchannel plates

International Nuclear Information System (INIS)

Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

2012-01-01

Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

KAUST Repository

Bahabry, Rabab R.

2017-11-30

The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

Multi-Course Comparison of Traditional versus Web-based Course Delivery Systems

Directory of Open Access Journals (Sweden)

J. Michael Weber, PhD.,

2007-07-01

Full Text Available The purpose of this paper is to measure and compare the effectiveness of a Web-based course delivery system to a traditional course delivery system. The results indicate that a web-based course is effective and equivalent to a traditional classroom environment. As with the implementation of all new technologies, there are some pros and cons that should be considered. The significant pro is the element of convenience which eliminates the constrictive boundaries of space and time. The most notable con involves the impersonal nature of the online environment. Overall, we found the web-based course delivery system to be very successful in terms of learning outcomes and student satisfaction.

Silicon CMOS architecture for a spin-based quantum computer.

Science.gov (United States)

Veldhorst, M; Eenink, H G J; Yang, C H; Dzurak, A S

2017-12-15

Recent advances in quantum error correction codes for fault-tolerant quantum computing and physical realizations of high-fidelity qubits in multiple platforms give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based on complementary metal-oxide-semiconductor (CMOS) technology. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin state of a single electron confined in quantum dots, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout. We implement a spin qubit surface code, showing the prospects for universal quantum computation. We discuss the challenges and focus areas that need to be addressed, providing a path for large-scale quantum computing.

Fiscal 2000 achievement report. Development of energy use rationalization-oriented silicon manufacturing process (Survey and study of analysis of commercialization of solar-grade silicon material manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko kyodo kenkyu gyomu seika hokokusho. Energy shiyo gorika silicon seizo process kaihatsu (Taiyodenchiyou silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

The trend of technology development, problems harbored therein, trend of the market, and the like were investigated for supporting the development of technologies for the mass production and commercialization of solar-grade silicon materials. Concerning the future of production enhancement and cost reduction in the manufacture of polycrystalline silicon solar cells, studies were made from the technological viewpoint. The results are shown below. It is estimated that approximately 4,500 tons of material silicon will be necessary in 2005 and 6,500-10,700 tons in 2010. Since the melting purification method of NEDO (New Energy and Industrial Technology Development Organization) now under development step by step toward commercialization as well as the conventional source will provide the necessary amount of material silicon, it is inferred that the development of solar cells will go on without any restraint originating in the semiconductor industry. With the commercialization of the technologies so far developed and the development/commercialization of the fast-acting high-performance solar cell technology, probabilities are high that the polycrystalline silicon solar cell manufacturing cost in 2010 will be as low as to be on the 100 yen/W (93-118 yen/W) level which is the level now held up as the goal. (NEDO)

The Effect of Virtual versus Traditional Learning in Achieving Competency-Based Skills

Science.gov (United States)

Mosalanejad, Leili; Shahsavari, Sakine; Sobhanian, Saeed; Dastpak, Mehdi

2012-01-01

Background: By rapid developing of the network technology, the internet-based learning methods are substituting the traditional classrooms making them expand to the virtual network learning environment. The purpose of this study was to determine the effectiveness of virtual systems on competency-based skills of first-year nursing students.…

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

International Nuclear Information System (INIS)

Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

2015-01-01

The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

Energy Technology Data Exchange (ETDEWEB)

Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

2015-12-07

The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

A comparison of degradation in three amorphous silicon PV module technologies

Energy Technology Data Exchange (ETDEWEB)

Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2010-03-15

Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

Silicon-based metallic micro grid for electron field emission

International Nuclear Information System (INIS)

Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

2012-01-01

A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

Considerations for Solar Energy Technologies to Make Progress Towards Grid Price Parity

Energy Technology Data Exchange (ETDEWEB)

Woodhouse, Michael; Fu, Ran; Chung, Donald; Horowitz, Kelsey; Remo, Timothy; Feldman, David; Margolis, Robert

2015-11-07

In this seminar the component costs for solar photovoltaics module and system prices will be highlighted. As a basis for comparison to other renewable and traditional energy options, the metric of focus will be total lifecycle cost-of-energy (LCOE). Several innovations to traditional photovoltaics technologies (including crystalline silicon, CdTe, and CIGS) and developing technologies (including organics and perovskites) that may close the gaps in LCOE will be discussed.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

Science.gov (United States)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

In-situ formation of nanoparticles within a silicon-based matrix

Science.gov (United States)

Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

2008-06-10

A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

A silicon-based electrical source for surface plasmon polaritons

NARCIS (Netherlands)

Walters, Robert J.; van Loon, Rob V.A.; Brunets, I.; Schmitz, Jurriaan; Polman, Albert

2009-01-01

This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes

Technology and quality of Skorup - traditional Montenegrin dairy product

Directory of Open Access Journals (Sweden)

Slavko Mirecki

2017-01-01

Full Text Available Skorup is Montenegrin traditional dairy product. Its main characteristics are extremely high content of milk fat and centuries-old technology. Due to the specific technology, high nutritional value and its historical heritage, Skorup deserves to be labelled as product with protected designation of origin (PDO or protected geographical indication (PGI. The purpose of this study was to collect the most important data about Skorup technology and quality and to launch the process of protection. The chemical quality of raw milk was analysed using IR spectrophotometry, the number of somatic cells and total bacteria count by flow cytometry, and Skorup composition by FTIR spectrophotometry. The presence of Escherichia coli, coagulase positive staphylococci and aerobic mesophilic bacteria in Skorup was detected by standard broth base methods. All Skorup samples contained more than 80 % of fat in dry matter, more than 70 % dry matter, approximately 60 % milk fat and 6 % proteins. The sensory characteristics of all samples were excellent, and according to sensory classification, they belong to the highest classes (I and IA. However, five out of twenty samples did not meet requirements for hygienic quality, which implies the urgent need for improvement of hygiene conditions during its production.

Silicon Qubits

Energy Technology Data Exchange (ETDEWEB)

Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

Science.gov (United States)

Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

2017-01-01

A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

Novel silicone-based polymer containing active methylene designed for the removal of indoor formaldehyde

Energy Technology Data Exchange (ETDEWEB)

Niu, Song, E-mail: niusong84@163.com; Yan, Hongxia, E-mail: hongxiayan@nwpu.edu.cn

2015-04-28

Highlights: • A novel silicone-based polymer with active methylene was explored. • Surface tension of liquid paints could be lowered using the polymer. • The polymer was easy to migrate toward the air-coating interface. • Free HCHO could effectively be removed using the polymer. • A lights on HCHO reduction without complicated preparation procedure was shielded. - Abstract: Indoor air pollution is caused inevitably due to complicated home decoration, in which formaldehyde is one of the most typical pollutants. It will be a convenient, economical and effective strategy to remove indoor formaldehyde if imparting a feature of formaldehyde removal to decorative coatings. We have successfully explored a novel silicone-based polymer containing active methylene used as a formaldehyde absorbent in coatings via a straightforward transesterification process using inexpensive and easily available chemicals. The polymer has been characterized by {sup 13}C NMR, FTIR, GC and GPC. Formaldehyde removal capacity of the coating films containing different contents of the polymer has been investigated. The results indicated that coatings incorporating 4 wt% of the polymer could make the coating films exhibit significant improvement on formaldehyde removal including purificatory performance (>85%) and durability of purificatory effect (>60%), compared to those consisting of absorbents without any silicon, and improve yellowing resistance performance, while other properties, such as gloss, adhesion, pencil hardness, flexibility and impact resistance, were kept almost unaffected. The chemical absorption process of the silicone-based polymer filled in interior decorative coatings is demonstrated as a promising technology to purify indoor formaldehyde and thus can reduce the harm to individuals.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

Science.gov (United States)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Qualification of a new supplier for silicon particle detectors

Energy Technology Data Exchange (ETDEWEB)

Dragicevic, M., E-mail: marko.dragicevic@cern.ch [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Frühwirth, E. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J.; Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

2013-12-21

Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors are capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European semiconductor manufacturer Infineon Technologies Austria AG the Institute of High Energy Physics of the Austrian Academy of Sciences developed planar silicon strip sensors in p-on-n technology. This paper presents the development, production and results from the electrical characterisation of the first sensors produced by Infineon.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Emerging heterogeneous integrated photonic platforms on silicon

Directory of Open Access Journals (Sweden)

Fathpour Sasan

2015-05-01

Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

Industrial Silicon Wafer Solar Cells

OpenAIRE

Neuhaus, Dirk-Holger; Münzer, Adolf

2007-01-01

In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

International Nuclear Information System (INIS)

Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

2013-06-01

In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

Technology of solar cells of CuInSe-2

International Nuclear Information System (INIS)

Gordillo, Gerardo; Rodriguez, Jairo A

1993-01-01

The energetic problem in the World is at the present time one of the topics of more interest; for that reason the study of the transformation of the solar energy in electric power, using photovoltaic devices, it is a field of great priority in the investigation. The direct conversion of the solar energy in electric power, using solar cells, it represents an interesting alternative to replace a fraction of the energy deficit that will present as consequence of the limited reservations of hydrocarbons. At the present time they are had in experimentation plants lots of megawatts based on cells of silicon mono-crystalline. The solar cell technologically more developed it is that of silicon mono-crystalline; however their production cost is too high and difficultly it could compete economically with the traditional forms of generating energy; for this reason they are becoming big efforts and economic investments to develop solar cells of high efficiency and stability with base in thin movies whose production costs are much lower compared with those of cells of crystalline silicon

Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

2002-01-01

In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

The development and application of silicon neutron transmutation doping (NTD) technology in china

International Nuclear Information System (INIS)

Qiao Chenyang; Sun Zhiyong; Ke Guotu, Lu Cungang; Shen Feng; Chen Huiqiang

2009-01-01

The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper. The advantages of NTD, compared with conventional technology of doping, are narrated. The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained. The market demand tendency is prospected, and the advanced measures on NTD quality control are described. (authors)

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Sevilla, Galo T.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad Mustafa

2015-01-01

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.

2015-12-11

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

A Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

OpenAIRE

Berman, G. P.; Doolen, G. D.; Tsifrinovich, V. I.

2000-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines the well-developed silicon technology with expected advances in MRFM.

Erbium Laser Technology vs Traditional Drilling for Caries Removal: A Systematic Review with Meta-Analysis.

Science.gov (United States)

Tao, Siying; Li, Lan; Yuan, He; Tao, Sibei; Cheng, Yiming; He, Libang; Li, Jiyao

2017-12-01

The study aimed to assess the efficacy of erbium laser technology compared with traditional drilling for caries removal. A systematic search was conducted through Medline via PubMed, Embase, Cochrane databases, CNKI till December 2016. Randomised controlled trials, quasi-randomized controlled trials, or controlled clinical trials with data comparing the efficacy of erbium laser technology versus traditional drilling for caries removal were included. Fourteen studies were selected in our meta-analysis. Erbium laser technology showed an increased time when removing caries compared with drilling (mean difference: 3.48, 95% confidence interval: 1.90-5.06, P drilling with regard to restoration loss, pulpal vitality, and postoperative sensitivity. Erbium laser technology showed an increased time for cavity preparation compared with traditional drilling. However, erbium laser technology reduced the requirement for local anesthesia. There was no significant difference between erbium laser technology and traditional drilling regarding restoration loss, pulpal vitality, and postoperative sensitivity. Copyright © 2017 Elsevier Inc. All rights reserved.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Directory of Open Access Journals (Sweden)

Thi Dep Ha

2016-04-01

Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

2016-04-15

Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

The Circle of Prosperity: Tribal Colleges, Tradition, and Technology -- Building Synergistic Cross-Community Collaborations

Science.gov (United States)

Billy, C. L.

2003-12-01

For more than three decades, American Indian Tribal Colleges and Universities have been working to sustain what is ours: our land, our language, our communities, and our culture. Tribal Colleges have achieved success by helping our communities, located in some of the poorest and most geographically remote areas of the country, develop systems for higher education, research, and economic development that are accessible, culturally responsive, and place-based. American Indian higher education is holistic, focused on the mind, body, spirit, and family. Research is respectful of culture, mindful of community values, and essential to community well-being. Economic development strategies are based on national and international trends, but focused on relationships between local people and their land. In this environment, applied research flourishes and new knowledge, integrating traditional ways of knowing with western science, is created and used. In the 1990s, the American Indian Higher Education Consortium, which is composed of 35 Tribal Colleges and Universities in the U.S. and Canada, launched a major initiative to expand and enhance this capacity through new collaborations and state-of-the-art information and communications technologies. Through a multi-phase effort, the Tribal Colleges developed and are currently implementing a dynamic and broad-based strategic plan. The goal: to reach a "Circle of Prosperity," a place where tribal traditions and new technologies are woven together to build stronger and more sustainable communities through enhanced STEM education and research programs. Our plan, the "Tribal College Framework for Community Technology," is a framework of strategic partnerships, resources, and tools that is helping us create locally based economic and social opportunities through information and communications technology and use of the Internet. During this presentation, we will: (a) discuss the innovative collaborative process we are using to build

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

KAUST Repository

Hussain, Aftab M.

2016-12-01

With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

White-light emission from porous-silicon-aluminium Schottky junctions

International Nuclear Information System (INIS)

Masini, G.; La Monica, S.; Maiello, G.

1996-01-01

Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Light-Induced Degradation of Thin Film Silicon Solar Cells

International Nuclear Information System (INIS)

Hamelmann, F U; Weicht, J A; Behrens, G

2016-01-01

Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Technological innovation and valorisation of traditional food: a sustainable combination?

Directory of Open Access Journals (Sweden)

Marco Dalla Rosa

2009-10-01

Full Text Available Valorization of traditional foods is nowadays a key element for market developments where national industries are strongly involved in saving product peculiarity against imitative food coming from foreign countries or even different continents. Other than the lack in well defined and garanteed sensorial quality, the production conditions, the quality of raw material and the different cultural background lead to produce foods that, despite to the name indicating some italian origin or recallin in some ways Italy and italian food and traditions, are only imitation without safety and quality proper of the original traditional food. Thus it is necessary to individuate appropriated technologies and strategies to increase le level of garantee offered to the consumer in order to promote the consumption of traditional foods with the promised quality and safety. In this paper the role that the modern food technology and the food science can assume to improve the processing conditions and yields, introducing some innovations into the old processes will be pointed out. Furthermore, the characterization of the complexity of the chemical, chemico-physical and rheological properties that influence the whole sensorial aspect of traditional foods, both from animal and vegetal (and fruit origin, is a growing challenge of the food science since the new analytical methodologies now available. In the paper some example of objective characterization and introduction of innovation steps are reported as well as genuinity marker individuation in order to give sustainability to the production of traditional foods in particular in SME.

Reduced Moment-Based Models for Oxygen Precipitates and Dislocation Loops in Silicon

Science.gov (United States)

Trzynadlowski, Bart

The demand for ever smaller, higher-performance integrated circuits and more efficient, cost-effective solar cells continues to push the frontiers of process technology. Fabrication of silicon devices requires extremely precise control of impurities and crystallographic defects. Failure to do so not only reduces performance, efficiency, and yield, it threatens the very survival of commercial enterprises in today's fiercely competitive and price-sensitive global market. The presence of oxygen in silicon is an unavoidable consequence of the Czochralski process, which remains the most popular method for large-scale production of single-crystal silicon. Oxygen precipitates that form during thermal processing cause distortion of the surrounding silicon lattice and can lead to the formation of dislocation loops. Localized deformation caused by both of these defects introduces potential wells that trap diffusing impurities such as metal atoms, which is highly desirable if done far away from sensitive device regions. Unfortunately, dislocations also reduce the mechanical strength of silicon, which can cause wafer warpage and breakage. Engineers must negotiate this and other complex tradeoffs when designing fabrication processes. Accomplishing this in a complex, modern process involving a large number of thermal steps is impossible without the aid of computational models. In this dissertation, new models for oxygen precipitation and dislocation loop evolution are described. An oxygen model using kinetic rate equations to evolve the complete precipitate size distribution was developed first. This was then used to create a reduced model tracking only the moments of the size distribution. The moment-based model was found to run significantly faster than its full counterpart while accurately capturing the evolution of oxygen precipitates. The reduced model was fitted to experimental data and a sensitivity analysis was performed to assess the robustness of the results. Source

Large magnetoresistance effect in nitrogen-doped silicon

Directory of Open Access Journals (Sweden)

Tao Wang

2017-05-01

Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Impurities in silicon and their impact on solar cell performance

NARCIS (Netherlands)

Coletti, Gianluca

2011-01-01

Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

Thin-film silicon solar cell technology

Czech Academy of Sciences Publication Activity Database

Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

2004-01-01

Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

Science-Technology-Society literacy in college non-majors biology: Comparing problem/case studies based learning and traditional expository methods of instruction

Science.gov (United States)

Peters, John S.

This study used a multiple response model (MRM) on selected items from the Views on Science-Technology-Society (VOSTS) survey to examine science-technology-society (STS) literacy among college non-science majors' taught using Problem/Case Studies Based Learning (PBL/CSBL) and traditional expository methods of instruction. An initial pilot investigation of 15 VOSTS items produced a valid and reliable scoring model which can be used to quantitatively assess student literacy on a variety of STS topics deemed important for informed civic engagement in science related social and environmental issues. The new scoring model allows for the use of parametric inferential statistics to test hypotheses about factors influencing STS literacy. The follow-up cross-institutional study comparing teaching methods employed Hierarchical Linear Modeling (HLM) to model the efficiency and equitability of instructional methods on STS literacy. A cluster analysis was also used to compare pre and post course patterns of student views on the set of positions expressed within VOSTS items. HLM analysis revealed significantly higher instructional efficiency in the PBL/CSBL study group for 4 of the 35 STS attitude indices (characterization of media vs. school science; tentativeness of scientific models; cultural influences on scientific research), and more equitable effects of traditional instruction on one attitude index (interdependence of science and technology). Cluster analysis revealed generally stable patterns of pre to post course views across study groups, but also revealed possible teaching method effects on the relationship between the views expressed within VOSTS items with respect to (1) interdependency of science and technology; (2) anti-technology; (3) socioscientific decision-making; (4) scientific/technological solutions to environmental problems; (5) usefulness of school vs. media characterizations of science; (6) social constructivist vs. objectivist views of theories; (7

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Silicon-on-insulator-based polarization-independent 1×3 broadband beam splitter with adiabatic coupling

Science.gov (United States)

Gong, Yuanhao; Liu, Lei; Chang, Limin; Li, Zhiyong; Tan, Manqing; Yu, Yude

2017-10-01

We propose and numerically simulate a polarization-independent 1×3 broadband beam splitter based on silicon-on-insulator (SOI) technology with adiabatic coupling. The designed structure is simulated by beam-propagation-method (BPM) and gets simulated transmission uniformity of three outputs better than 0.3dB for TE-polarization and 0.8dB for TM-polarization in a broadband of 180nm.

All-silicon-based nano-antennas for wavelength and polarization demultiplexing.

Science.gov (United States)

Panmai, Mingcheng; Xiang, Jin; Sun, Zhibo; Peng, Yuanyuan; Liu, Hongfeng; Liu, Haiying; Dai, Qiaofeng; Tie, Shaolong; Lan, Sheng

2018-05-14

We propose an all-silicon-based nano-antenna that functions as not only a wavelength demultiplexer but also a polarization one. The nano-antenna is composed of two silicon cuboids with the same length and height but with different widths. The asymmetric structure of the nano-antenna with respect to the electric field of the incident light induced an electric dipole component in the propagation direction of the incident light. The interference between this electric dipole and the magnetic dipole induced by the magnetic field parallel to the long side of the cuboids is exploited to manipulate the radiation direction of the nano-antenna. The radiation direction of the nano-antenna at a certain wavelength depends strongly on the phase difference between the electric and magnetic dipoles interacting coherently, offering us the opportunity to realize wavelength demultiplexing. By varying the polarization of the incident light, the interference of the magnetic dipole induced by the asymmetry of the nano-antenna and the electric dipole induced by the electric field parallel to the long side of the cuboids can also be used to realize polarization demultiplexing in a certain wavelength range. More interestingly, the interference between the dipole and quadrupole modes of the nano-antenna can be utilized to shape the radiation directivity of the nano-antenna. We demonstrate numerically that radiation with adjustable direction and high directivity can be realized in such a nano-antenna which is compatible with the current fabrication technology of silicon chips.

Thermophysical spectroscopy of defect states in silicon

International Nuclear Information System (INIS)

Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

1989-01-01

The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

Silicon microelectronic field-emissive devices for advanced display technology

Science.gov (United States)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Infrared characterization of some oxygen-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Hallberg, T.

1993-01-01

This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

Electroluminescence efficiencies of erbium in silicon-based hosts

Energy Technology Data Exchange (ETDEWEB)

Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2013-11-04

We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

Science.gov (United States)

Shikunov, S. L.; Kurlov, V. N.

2017-12-01

We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Appraisal of traditional technologies i

African Journals Online (AJOL)

Jobo

A survey on the production practices and mode of utilization of mumu – a traditional, ready-to-eat Nigerian cereal-based food product - was conducted to be able to provide information that would be used to improve on the processing, nutritional quality and acceptability of the product. 83 % of respondents indicated the use ...

MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon

Directory of Open Access Journals (Sweden)

L. Aluigi

2013-09-01

Full Text Available The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeter-waves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer Design Automation on Silicon (MIDAS that exploits commercial simulators and allows the implementation of an automatic design flow, including three-dimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer on the bases of the design entries (specifications. It draws the inductor (transformer layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80GHz CPU with 2-GB RAM. Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment.

Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

International Nuclear Information System (INIS)

Quoizola, S.

2003-01-01

The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

Integrated silicon optoelectronics

CERN Document Server

Zimmermann, Horst

2000-01-01

'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

Mode-locked silicon evanescent lasers.

Science.gov (United States)

Koch, Brian R; Fang, Alexander W; Cohen, Oded; Bowers, John E

2007-09-03

We demonstrate electrically pumped lasers on silicon that produce pulses at repetition rates up to 40 GHz. The mode locked lasers generate 4 ps pulses with low jitter and extinction ratios above 18 dB, making them suitable for data and telecommunication transmitters and for clock generation and distribution. Results of both passive and hybrid mode locking are discussed. This type of device could enable new silicon based integrated technologies, such as optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Magnetic resonance force microscopy quantum computer with tellurium donors in silicon.

Science.gov (United States)

Berman, G P; Doolen, G D; Hammel, P C; Tsifrinovich, V I

2001-03-26

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations.

Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon

International Nuclear Information System (INIS)

Berman, G. P.; Doolen, G. D.; Hammel, P. C.; Tsifrinovich, V. I.

2001-01-01

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations

Black silicon with black bus-bar strings

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

2016-01-01

We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Black bus-bars were realized by oxidized copper resulting in reflectance below 3% in the entire visible wavelength range. The combination of these two technologies may result in aesthetic, all-black panels based on conventional, front-contacted solar cells...

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Traditional technologies of fuels production for air-jet engines

Directory of Open Access Journals (Sweden)

Бойченко С. В.

2013-07-01

Full Text Available Available energy resources for various fuels, mainly for gas-turbine engines are presented in the given article. Traditional technologies for jet fuels production from nonrenewable raw materials, such as crude oil, coal, natural gas, oil-shales and others are analyzed in details. Cause and effect relationship between production and use of such fuels and their impact on natural environment is defined. The timeliness and necessity for development of alternative technologies of aviation biofuels production are determined in the given article.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Science.gov (United States)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides.

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A; Olsson, Roy H; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic-phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized-with over 1,000 times larger nonlinearity than reported in previous systems-yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

Science.gov (United States)

Shin, Heedeuk; Qiu, Wenjun; Jarecki, Robert; Cox, Jonathan A.; Olsson, Roy H.; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2013-01-01

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip. PMID:23739586

Collaboration through Flickr & Skype: Can Web 2.0 Technology Substitute the Traditional Design Studio in Higher Design Education?

Science.gov (United States)

Fleischmann, Katja

2014-01-01

Technology has not only changed the work practice of designers but also how design is taught and learned. The emergence of digital technology has made computer labs a central learning space for design students. Since this change, studio-based learning in its traditional sense appears to be in decline in higher education institutions. This is in…

University Crystalline Silicon Photovoltaics Research and Development

Energy Technology Data Exchange (ETDEWEB)

Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

2008-08-18

The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

On-chip microsystems in silicon: opportunities and limitations

Science.gov (United States)

Wolffenbuttel, R. F.

1996-03-01

Integrated on-chip micro-instrumentation systems in silicon are complete data acquisition systems on a single chip. This concept has appeared to be the ultimate solution in many applications, as it enables in principle the metamorphosis of a basic sensing element, affected with many shortcomings, into an on-chip data acquisition unit that provides an output digital data stream in a standard format not corrupted by sensor non-idealities. Market acceptance would be maximum, as no special knowledge about the internal operation is required, self-test and self-calibration can be included and the dimensions are not different from those of the integrated circuit. The various aspects that are relevant in estimating the constraints for successful implementation of the integrated silicon smart sensor will be outlined in comparison with the properties of more conventional sensor fabrication technologies. It will be shown that the acceptance of on-chip functional integration in an application depends primarily on the added value in terms of improved specification or functionality that the resulting device provides in that application. The economic viability is therefore decisive rather than the technological constraints. This is in contrast to the traditional technology push prevailing in sensor research over market pull mechanisms.

Optical interconnects based on VCSELs and low-loss silicon photonics

Science.gov (United States)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system

Science.gov (United States)

Kim, Hyungjin; Hwang, Sungmin; Park, Jungjin; Park, Byung-Gook

2017-10-01

Brain-inspired neuromorphic systems have attracted much attention as new computing paradigms for power-efficient computation. Here, we report a silicon synaptic transistor with two electrically independent gates to realize a hardware-based neural network system without any switching components. The spike-timing dependent plasticity characteristics of the synaptic devices are measured and analyzed. With the help of the device model based on the measured data, the pattern recognition capability of the hardware-based spiking neural network systems is demonstrated using the modified national institute of standards and technology handwritten dataset. By comparing systems with and without inhibitory synapse part, it is confirmed that the inhibitory synapse part is an essential element in obtaining effective and high pattern classification capability.

GaN-on-Silicon - Present capabilities and future directions

Science.gov (United States)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Science.gov (United States)

Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

2018-03-01

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

Quantification of Technology Innovation Usinga Risk-Based Framework

OpenAIRE

Gerard E. Sleefe

2010-01-01

There is significant interest in achieving technology innovation through new product development activities. It is recognized, however, that traditional project management practices focused only on performance, cost, and schedule attributes, can often lead to risk mitigation strategies that limit new technology innovation. In this paper, a new approach is proposed for formally managing and quantifying technology innovation. This approach uses a risk-based framework that s...

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

Science.gov (United States)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Thermally-isolated silicon-based integrated circuits and related methods

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Method of making thermally-isolated silicon-based integrated circuits

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

2017-11-21

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Trwoga, P.F.

1998-01-01

Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

An innovative large scale integration of silicon nanowire-based field effect transistors

Science.gov (United States)

Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

2018-05-01

Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

[Analysis on difference of richness of traditional Chinese medicine resources in Chongqing based on grid technology].

Science.gov (United States)

Zhang, Xiao-Bo; Qu, Xian-You; Li, Meng; Wang, Hui; Jing, Zhi-Xian; Liu, Xiang; Zhang, Zhi-Wei; Guo, Lan-Ping; Huang, Lu-Qi

2017-11-01

After the end of the national and local medicine resources census work, a large number of Chinese medicine resources and distribution of data will be summarized. The species richness between the regions is a valid indicator for objective reflection of inter-regional resources of Chinese medicine. Due to the large difference in the size of the county area, the assessment of the intercropping of the resources of the traditional Chinese medicine by the county as a statistical unit will lead to the deviation of the regional abundance statistics. Based on the rule grid or grid statistical methods, the size of the statistical unit due to different can be reduced, the differences in the richness of traditional Chinese medicine resources are caused. Taking Chongqing as an example, based on the existing survey data, the difference of richness of traditional Chinese medicine resources under different grid scale were compared and analyzed. The results showed that the 30 km grid could be selected and the richness of Chinese medicine resources in Chongqing could reflect the objective situation of intercropping resources richness in traditional Chinese medicine better. Copyright© by the Chinese Pharmaceutical Association.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2014-01-01

In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

Quality Traceability System of Traditional Chinese Medicine Based on Two Dimensional Barcode Using Mobile Intelligent Technology.

Directory of Open Access Journals (Sweden)

Yong Cai

Full Text Available Currently, the chemical fingerprint comparison and analysis is mainly based on professional equipment and software, it's expensive and inconvenient. This study aims to integrate QR (Quick Response code with quality data and mobile intelligent technology to develop a convenient query terminal for tracing quality in the whole industrial chain of TCM (traditional Chinese medicine. Three herbal medicines were randomly selected and their chemical two-dimensional barcode (2D barcodes fingerprints were constructed. Smartphone application (APP based on Android system was developed to read initial data of 2D chemical barcodes, and compared multiple fingerprints from different batches of same species or different species. It was demonstrated that there were no significant differences between original and scanned TCM chemical fingerprints. Meanwhile, different TCM chemical fingerprint QR codes could be rendered in the same coordinate and showed the differences very intuitively. To be able to distinguish the variations of chemical fingerprint more directly, linear interpolation angle cosine similarity algorithm (LIACSA was proposed to get similarity ratio. This study showed that QR codes can be used as an effective information carrier to transfer quality data. Smartphone application can rapidly read quality information in QR codes and convert data into TCM chemical fingerprints.

Soft silicone based interpenetrating networks as materials for actuators

DEFF Research Database (Denmark)

Yu, Liyun; Gonzalez, Lidia; Hvilsted, Søren

2014-01-01

A new approach based on silicone interpenetrating networks with orthogonal chemistries has been investigated with focus on developing soft and flexible elastomers with high energy densities and small viscous losses. The interpenetrating networks are made as simple two pot mixtures...... as for the commercial available silylation based elastomers such as Elastosil RT625. The resulting interpenetrating networks are formulated to be softer than RT625 to increase the actuation caused when applying a voltage due to their softness combined with the significantly higher permittivity than the pure silicone...

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

Directory of Open Access Journals (Sweden)

Tianjian Li

2015-04-01

Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Mid-infrared integrated photonics on silicon: a perspective

Directory of Open Access Journals (Sweden)

Lin Hongtao

2017-12-01

Full Text Available The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-12-01

Full Text Available In today’s digital world, complementary metal oxide semiconductor (CMOS technology enabled scaling of bulk mono-crystalline silicon (100 based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm mono-crystalline (100 silicon (detached from bulk substrate by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs with high-κ/metal gate stacks.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

International Nuclear Information System (INIS)

Strobel, Sebastian; Hernandez, Rocio Murcia; Hansen, Allan G; Tornow, Marc

2008-01-01

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10 -18 farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

Energy Technology Data Exchange (ETDEWEB)

Strobel, Sebastian; Hernandez, Rocio Murcia [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Hansen, Allan G; Tornow, Marc [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)], E-mail: m.tornow@tu-bs.de

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10{sup -18} farad and asymmetric resistances of 30 and 300 M{omega}, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

Science.gov (United States)

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Teaching Information Systems Technologies: a New Approach based on Virtualization and Hosting Technologies

Directory of Open Access Journals (Sweden)

Carmelo R. García

2012-11-01

Full Text Available This paper describes how to provide suitable computing systems for information systems technologies learning using virtualization and hosting technologies. The main functionalities and components of an university learning lab based on these technologies are presented. All the software components used in its development are open source. Also, the use of this lab, providing the computing systems required for the learning activities of different matters related to the information systems technologies, is illustrated. The model of computing lab proposed is a more sustainable and scalable alternative than the traditional academic computing lab.

Packaged mode multiplexer based on silicon photonics

NARCIS (Netherlands)

Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

2012-01-01

A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

Energy Technology Data Exchange (ETDEWEB)

Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2009-10-15

In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

Porous silicon for drug delivery applications and theranostics: recent advances, critical review and perspectives.

Science.gov (United States)

Kumeria, Tushar; McInnes, Steven J P; Maher, Shaheer; Santos, Abel

2017-12-01

Porous silicon (pSi) engineered by electrochemical etching has been used as a drug delivery vehicle to address the intrinsic limitations of traditional therapeutics. Biodegradability, biocompatibility, and optoelectronic properties make pSi a unique candidate for developing biomaterials for theranostics and photodynamic therapies. This review presents an updated overview about the recent therapeutic systems based on pSi, with a critical analysis on the problems and opportunities that this technology faces as well as highlighting pSi's growing potential. Areas covered: Recent progress in pSi-based research includes drug delivery systems, including biocompatibility studies, drug delivery, theranostics, and clinical trials with the most relevant examples of pSi-based systems presented here. A critical analysis about the technical advantages and disadvantages of these systems is provided along with an assessment on the challenges that this technology faces, including clinical trials and investors' support. Expert opinion: pSi is an outstanding material that could improve existing drug delivery and photodynamic therapies in different areas, paving the way for developing advanced theranostic nanomedicines and incorporating payloads of therapeutics with imaging capabilities. However, more extensive in-vivo studies are needed to assess the feasibility and reliability of this technology for clinical practice. The technical and commercial challenges that this technology face are still uncertain.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

Science.gov (United States)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Superconducting Super Collider silicon tracking subsystem research and development

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

1990-12-01

The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

Next generation structural silicone glazing

Directory of Open Access Journals (Sweden)

Charles D. Clift

2015-06-01

Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

Science.gov (United States)

Fu, Enjin

injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.

Silicon photonics at the University of Surrey

Science.gov (United States)

Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

2009-05-01

Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

Electroplated contacts and porous silicon for silicon based solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

2015-04-15

Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

Science.gov (United States)

Hanak, Joseph J.; Kaschmitter, Jim

1991-01-01

Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

Spectral response of multi-element silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

1997-04-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

Key Processes of Silicon-On-Glass MEMS Fabrication Technology for Gyroscope Application.

Science.gov (United States)

Ma, Zhibo; Wang, Yinan; Shen, Qiang; Zhang, Han; Guo, Xuetao

2018-04-17

MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.

Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

International Nuclear Information System (INIS)

Sokolovskij, R; Liu, P; Van Zeijl, H W; Mimoun, B; Zhang, G Q

2015-01-01

Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies. (paper)

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Science.gov (United States)

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

CERN Document Server

Kissinger, Dietmar

2012-01-01

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

Science.gov (United States)

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Towards hybrid heterojunction silicon solar cells with organic charge carrier selective contacts

OpenAIRE

Jäckle, Sara Lisa

2017-01-01

Photovoltaic is an essential part of the needed global transition towards renewable energies. Even though many materials have good absorption and energy conversion properties, the market is dominated by technologies based on crystalline silicon. Silicon has the advantage of being neither toxic nor rare on earth and it is very well investigated due to its extensive use in microelectronics. The best power conversion efficiencies of silicon solar cells and modules are achieved by sophisticated d...

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

International Nuclear Information System (INIS)

Feld, L.; Karpinski, W.; Klein, K.

2016-04-01

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Enabling technologies for silicon microstrip tracking detectors at the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Feld, L.; Karpinski, W.; Klein, K. [RWTH Aachen Univ. (Germany). 1. Physikalisches Institut B; Collaboration: The PETTL Collaboration; and others

2016-04-15

While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative ''Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC'' (PETTL), which was supported by the Helmholtz Alliance ''Physics at the Terascale'' during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R and D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

Science.gov (United States)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Demonstration of robust micromachined jet technology and its application to realistic flow control problems

International Nuclear Information System (INIS)

Chang, Sung Pil

2006-01-01

This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies

Demonstration of robust micromachined jet technology and its application to realistic flow control problems

Energy Technology Data Exchange (ETDEWEB)

Chang, Sung Pil [Inha University, Incheon (Korea, Republic of)

2006-04-15

This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies.

Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

Directory of Open Access Journals (Sweden)

Junichiro Shiomi

2016-10-01

Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

International Nuclear Information System (INIS)

Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

2013-01-01

We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

Molecular monolayers for electrical passivation and functionalization of silicon-based solar energy devices

NARCIS (Netherlands)

Veerbeek, Janneke; Firet, Nienke J.; Vijselaar, Wouter; Elbersen, R.; Gardeniers, Han; Huskens, Jurriaan

2017-01-01

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based

Atomic scale simulations of hydrogen implantation defects in hydrogen implanted silicon - smart Cut technology

International Nuclear Information System (INIS)

Bilteanu, L.

2010-12-01

The topic of this thesis is related to the implantation step of the SmartCut TM technology. This technology uses hydrogen in order to transfer silicon layers on insulating substrates. The transfer is performed through a fracture induced by the formation of bidimensional defects well known in literature as 'platelets'. More exactly, we have studied within this thesis work the defects appearing in the post implant state and the evolution of the implantation damage towards a state dominated by platelets. The study is organised into two parts: in the first part we present the results obtained by atomic scale simulations while in the second part we present an infrared spectroscopy study of the evolution of defects concentrations after annealing at different temperatures. The atomic scale simulations have been performed within the density functional theory and they allowed us to compute the formation energies and the migration and recombination barriers. The defects included in our study are: the atomic and diatomic interstitials, the hydrogenated vacancies and multi-vacancies and the several platelets models. The obtained energies allowed us to build a stability hierarchy for these types of defects. This scheme has been confronted with some infrared analysis on hydrogen implanted silicon samples (37 keV) in a sub-dose regime which does not allow usually the formation of platelets during the implantation step. The analysis of the infrared data allowed the detailed description of the defects concentration based on the behaviour of peaks corresponding to the respective defects during annealing. The comparison between these evolutions and the energy scheme obtained previously allowed the validation of an evolution scenario of defects towards the platelet state. (author)

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Silicon carbide microsystems for harsh environments

CERN Document Server

Wijesundara, Muthu B J

2011-01-01

Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

Neutron transmutation doping technology of silicon and overview of trial irradiations at Cirus reactor

International Nuclear Information System (INIS)

Singh, Tej; Bhatnagar, Anil; Singh, Kanchhi; Raina, V.K.

2007-12-01

Neutron transmutation doped silicon (NTD-Si) has been used extensively in manufacturing of high power semiconductor devices. The quality of NTD-Si, both from view points of dopant concentration and homogeneity has been found superior to the quality of doped silicon produced by conventional methods. The technology of NTD-Si has been perfected to achieve more accurate resistivity and homogenous resistivity with complete elimination of hot spots. In addition, the greater spatial uniformity, as well as the precise control over the resistivity achievable by using the NTD process, has led to a substantial increase in the breakdown voltage capability of thyristors. The report describes the fundamentals of NTD-Si production and discusses various techniques used for control of dopant concentration and homogeneity. Various aspects like radiation damage, residual radio-activity, nuclear heating, surface contamination and annealing requirements of the silicon ingots after irradiation have also been discussed. Details of trail irradiation and characterization of NTD-Si samples have been provided. Future plans for production of NTD-Si in Cirus and Dhruva reactors have also been discussed. (author)

Melting of Grey Cast Iron Based on Steel Scrap Using Silicon Carbide

Directory of Open Access Journals (Sweden)

Stojczew A.

2014-08-01

Full Text Available The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its chemical composition (30% C and 70% Si which causes significant silicon content in iron increase, the carbon deficit can be partly compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

Enhancing the Appreciation of Traditional Chinese Painting Using Interactive Technology

Directory of Open Access Journals (Sweden)

Shichao Zhao

2018-04-01

Full Text Available In this paper, we present a two-part study. The first part was a cultural appreciation study. Through this study, we explored the specific approach of cross-cultural aesthetic appreciation and mapped out the potential insights for a prototype design. In the second part, we carried out a design-led study. We designed a tablet application and conducted focus group studies to explore the interactive technology that assists in the support of cross-cultural audiences’ aesthetic appreciation and engagement of traditional Chinese painting. Based on these findings, we went on to further explore an approach of interactive engagement which is specific to supporting cross-cultural appreciation, while also reflecting upon the interactive design suggestions for the development of aesthetic appreciation to offer various transferable insights to the Human–Computer Interaction (HCI community.

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

Science.gov (United States)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

Silicone-based Dielectric Elastomers

DEFF Research Database (Denmark)

Skov, Anne Ladegaard

Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

NARCIS (Netherlands)

Sammak, A.

2012-01-01

Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

Silicon-based spin and charge quantum computation

Directory of Open Access Journals (Sweden)

Belita Koiller

2005-06-01

Full Text Available Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P+2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.Arquiteturas de computadores quânticos baseadas em silício vêm atraindo atenção devido às suas perspectivas de escalabilidade e utilização dos recursos já instalados associados à tecnologia do Si. Spins eletrônicos e nucleares de doadores rasos (por exemplo fósforo em Si são candidatos ideais para bits quânticos (qubits nestas propostas, devido aos tempos de coerência relativamente longos dos spins em matrizes de Si. Para estes qubits de spin, a manipulação da carga do elétron do doador

Traditional fish processing: technology, quality development and evaluation

International Nuclear Information System (INIS)

Nketsia-Tabiri, J.

1994-01-01

Traditional fish processing technologies are important in the preservation and utilization of fish in many developing countries. These technologies as well as the quality of the products arc poorly defined and understood. This study therefore investigated the production, quality characteristics and utilization of traditional cured fish products using field surveys and laboratory techniques. It was found that simple traditional technologies for smoking, salting and drying are used to process fish in Ghana; infrastructural requirements for traditional fish processing have high local material input. The cured fish products have distinct sensory, physico-chemical properties and variable storage characteristics. Processors' perceptions of important quality attributes of cured fish products were linked to storage, marketing and other product delivery characteristics. Consumers' perceptions and expectations of desirable quality attributes however were found to he dependent upon the type of cured fish product and the food in which it is used. Cost was found to be the most important factor influencing the utilization of animal protein foods; other factors were nutritional quality, beliefs and food habits. Animal protein consumers showed a high preference for fish in general and cured fish products in particular. U sing central composite rotatable design for k = 3, representing salting time (0 - 24), drying temperature (40°C - 60°C) and drying time (6 - 20 hours), equations for predicting objective and subjective quality indices were developed. The critical salting time for attaining minimum moisture content were 20.5, 12 and 8.5 hours respectively for products dried at 40°C, 50°C and 60°C. At each salting time, the mean hardness score was dependent on the drying temperature and drying time whilst the mean colour and overall acceptability scores were influenced by drying temperature. It was found that the long salting time (24-72 hours) and drying time (5

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

Science.gov (United States)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

International Nuclear Information System (INIS)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig; Koo, Yong-Seo

2009-01-01

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p + drain and n + channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

Energy Technology Data Exchange (ETDEWEB)

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701 (Korea, Republic of); Koo, Yong-Seo, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering, Seokyeong University, 16-1, Jungneung-dong, Seongbuk-gu, Seoul 136-704 (Korea, Republic of)

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p{sup +} drain and n{sup +} channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

Science.gov (United States)

Shen, Wen-Wei; Chen, Kuan-Neng

2017-12-01

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

Science.gov (United States)

Nasr Esfahani, Mohammad; Kilinc, Yasin; Çagatay Karakan, M.; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; Erdem Alaca, B.

2018-04-01

The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μ m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.

Silicon deposition in nanopores using a liquid precursor

Science.gov (United States)

Masuda, Takashi; Tatsuda, Narihito; Yano, Kazuhisa; Shimoda, Tatsuya

2016-11-01

Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

Energy Technology Data Exchange (ETDEWEB)

Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

2014-11-03

Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

ARROW-based silicon-on-insulator photonic crystal waveguides with reduced losses

DEFF Research Database (Denmark)

Lavrinenko, Andrei; Novitsky, A.; Zhilko, V.V.

2006-01-01

We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits.......We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits....

Silicon carbide optics for space and ground based astronomical telescopes

Science.gov (United States)

Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

2012-09-01

Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar

2017-03-30

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2017-01-01

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

Using traditional methods and indigenous technologies for coping with climate variability

NARCIS (Netherlands)

Stigter, C.J.; Zheng Dawei,; Onyewotu, L.O.Z.; Mei Xurong,

2005-01-01

In agrometeorology and management of meteorology related natural resources, many traditional methods and indigenous technologies are still in use or being revived for managing low external inputs sustainable agriculture (LEISA) under conditions of climate variability. This paper starts with the

Traditional Turkish Fermented Cereal Based Products: Tarhana, Boza and Chickpea Bread

Directory of Open Access Journals (Sweden)

Hasan Tangüler

2014-04-01

Full Text Available Fermented products are one of the important foodstuffs in many countries of the world. People have gradually recognized the nutritional, functional and therapeutic value of these products and this has made them even more popular. Today, almost all consumers have a significant portion of their nutritional requirements fulfilled through these products. Scientific and technological knowledge is quite well developed for some fermented products such as wine, beer, cheese, and bread. These products are produced universally. However, scientific knowledge for some traditional foods produced locally in Turkey is still poor and not thorough. Numerous traditional, cereal-based fermented foods are produced in Turkey. The aim of this paper is to provide knowledge regarding the characterization, raw materials used for production, production methods, fermentation conditions and microorganisms which are effective in the fermentation of traditional foods. The study will focus on Boza, Tarhana, and Chickpea bread which are foods widely produced in Turkey.

Novel detectors for silicon based microdosimetry, their concepts and applications

Science.gov (United States)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Traditional Craft or Technology Education: Development of Students' Technical Abilities in Finnish Comprehensive School

Science.gov (United States)

Autio, Ossi

2016-01-01

Changes in the economy, nature, production and society together with increasing scientific and technological knowledge make demands of transforming school teaching in the field of technology education. The aim of the article is briefly to explore the integration between science, technology and traditional craft education by analyzing the current…

The impact of computer-based versus "traditional" textbook science instruction on selected student learning outcomes

Science.gov (United States)

Rothman, Alan H.

This study reports the results of research designed to examine the impact of computer-based science instruction on elementary school level students' science content achievement, their attitude about science learning, their level of critical thinking-inquiry skills, and their level of cognitive and English language development. The study compared these learning outcomes resulting from a computer-based approach compared to the learning outcomes from a traditional, textbook-based approach to science instruction. The computer-based approach was inherent in a curriculum titled The Voyage of the Mimi , published by The Bank Street College Project in Science and Mathematics (1984). The study sample included 209 fifth-grade students enrolled in three schools in a suburban school district. This sample was divided into three groups, each receiving one of the following instructional treatments: (a) Mixed-instruction primarily based on the use of a hardcopy textbook in conjunction with computer-based instructional materials as one component of the science course; (b) Non-Traditional, Technology-Based -instruction fully utilizing computer-based material; and (c) Traditional, Textbook-Based-instruction utilizing only the textbook as the basis for instruction. Pre-test, or pre-treatment, data related to each of the student learning outcomes was collected at the beginning of the school year and post-test data was collected at the end of the school year. Statistical analyses of pre-test data were used as a covariate to account for possible pre-existing differences with regard to the variables examined among the three student groups. This study concluded that non-traditional, computer-based instruction in science significantly improved students' attitudes toward science learning and their level of English language development. Non-significant, positive trends were found for the following student learning outcomes: overall science achievement and development of critical thinking

Silicone-Based Triboelectric Nanogenerator for Water Wave Energy Harvesting.

Science.gov (United States)

Xiao, Tian Xiao; Jiang, Tao; Zhu, Jian Xiong; Liang, Xi; Xu, Liang; Shao, Jia Jia; Zhang, Chun Lei; Wang, Jie; Wang, Zhong Lin

2018-01-31

Triboelectric nanogenerator (TENG) has been proven to be efficient for harvesting water wave energy, which is one of the most promising renewable energy sources. In this work, a TENG with a silicone rubber/carbon black composite electrode was designed for converting the water wave energy into electricity. The silicone-based electrode with a soft texture provides a better contact with the dielectric film. Furthermore, a spring structure is introduced to transform low-frequency water wave motions into high-frequency vibrations. They together improve the output performance and efficiency of TENG. The output performances of TENGs are further enhanced by optimizing the triboelectric material pair and tribo-surface area. A spring-assisted TENG device with the segmented silicone rubber-based electrode structure was sealed into a waterproof box, which delivers a maximum power density of 2.40 W m -3 , as triggered by the water waves. The present work provides a new strategy for fabricating high-performance TENG devices by coupling flexible electrodes and spring structure for harvesting water wave energy.

Characterization of electrical and optical properties of silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Jia, Guobin

2009-12-04

In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

Report for fiscal 1998 on results of research and development of silicon-based polymeric material. Material research for the liquid methane fueled aircraft engine; 1998 nendo keisokei kobunshi zairyo no kenkyu kaihatsu seika hokokusho. Methane nenryo kokukiyo engine kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Research was conducted for the purpose of establishing basic technology concerning molecular design, synthesis, material formation, and evaluation of silicon-based polymers which are expected to provide superior electronic/optical functions, high heat/combustion resistance and dynamic properties. The research subjects were such as following: research and development of silicon-based polymeric materials with sea-island microstructures; research and development of silicon-based polymeric materials with sea-island microstructures; research and development on IPN formation with silicon-based polymers; research and development of hybrid silicon polymers with organometallic compounds; research and development of silicon containing polymer materials with ring structures; general committee for investigation and research; the optimized low-temperature Wurtz synthesis and modification of polysilanes; study of unsaturated and hypercoordinate organosilicon compounds; basic studies on the synthesis and properties of silicon-based high polymers; studies of new monomer-synthesis and their polymerization reaction; studies on new method of preparation and functionalization of polysilanes; novel applications of silicon-based polymers in imaging devices for information display, memory, and recordings; and molecular design of silicon-containing {pi}-conjugated and {sigma}-conjugated compounds. (NEDO)

Porous silicon-based direct hydrogen sulphide fuel cells.

Science.gov (United States)

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

Science.gov (United States)

Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

2013-05-01

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

Science.gov (United States)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

Crossing the Resolution Limit in Near-Infrared Imaging of Silicon Chips: Targeting 10-nm Node Technology

Directory of Open Access Journals (Sweden)

Krishna Agarwal

2015-05-01

Full Text Available The best reported resolution in optical failure analysis of silicon chips is 120-nm half pitch demonstrated by Semicaps Private Limited, whereas the current and future industry requirement for 10-nm node technology is 100-nm half pitch. We show the first experimental evidence for resolution of features with 100-nm half pitch buried in silicon (λ/10.6, thus fulfilling the industry requirement. These results are obtained using near-infrared reflection-mode imaging using a solid immersion lens. The key novel feature of our approach is the choice of an appropriately sized collection pinhole. Although it is usually understood that, in general, resolution is improved by using the smallest pinhole consistent with an adequate signal level, it is found that in practice for silicon chips there is an optimum pinhole size, determined by the generation of induced currents in the sample. In failure analysis of silicon chips, nondestructive imaging is important to avoid disturbing the functionality of integrated circuits. High-resolution imaging techniques like SEM or TEM require the transistors to be exposed destructively. Optical microscopy techniques may be used, but silicon is opaque in the visible spectrum, mandating the use of near-infrared light and thus poor resolution in conventional optical microscopy. We expect our result to change the way semiconductor failure analysis is performed.

Laser wafering for silicon solar

International Nuclear Information System (INIS)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-01-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Laser wafering for silicon solar.

Energy Technology Data Exchange (ETDEWEB)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

International Nuclear Information System (INIS)

Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

2016-01-01

Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

Computerized tablet based versus traditional paper- based survey methods: results from adolescent's health research in schools of Maharashtra, India

OpenAIRE

Naveen Agarwal; Balram Paswan; Prakash H. Fulpagare; Dhirendra N Sinha; Thaksaphon Thamarangsi; Manju Rani

2018-01-01

Background and challenges to implementation Technological advancement is growing very fast in India and majority of young population is handling electronic devices often during leisure as well as at work. This study indicates that electronic tablets are less time consuming and improves survey response rate over the traditional paper-pencil survey method. Intervention or response An Android-based Global School-based Health Survey (GSHS) questionnaire was used with the...

Using Virtual Reality for Task-Based Exercises in Teaching Non-Traditional Students of German

Science.gov (United States)

Libbon, Stephanie

2004-01-01

Using task-based exercises that required web searches and online activities, this course introduced non-traditional students to the sights and sounds of the German culture and language and simultaneously to computer technology. Through partner work that required negotiation of the net as well as of the language, these adult beginning German…

Contacting graphene in a 200 mm wafer silicon technology environment

Science.gov (United States)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Formation and photoluminescence of "Cauliflower" silicon nanoparticles

NARCIS (Netherlands)

Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

2015-01-01

The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

Studies on a silicon-photomultiplier-based camera for Imaging Atmospheric Cherenkov Telescopes

Science.gov (United States)

Arcaro, C.; Corti, D.; De Angelis, A.; Doro, M.; Manea, C.; Mariotti, M.; Rando, R.; Reichardt, I.; Tescaro, D.

2017-12-01

Imaging Atmospheric Cherenkov Telescopes (IACTs) represent a class of instruments which are dedicated to the ground-based observation of cosmic VHE gamma ray emission based on the detection of the Cherenkov radiation produced in the interaction of gamma rays with the Earth atmosphere. One of the key elements of such instruments is a pixelized focal-plane camera consisting of photodetectors. To date, photomultiplier tubes (PMTs) have been the common choice given their high photon detection efficiency (PDE) and fast time response. Recently, silicon photomultipliers (SiPMs) are emerging as an alternative. This rapidly evolving technology has strong potential to become superior to that based on PMTs in terms of PDE, which would further improve the sensitivity of IACTs, and see a price reduction per square millimeter of detector area. We are working to develop a SiPM-based module for the focal-plane cameras of the MAGIC telescopes to probe this technology for IACTs with large focal plane cameras of an area of few square meters. We will describe the solutions we are exploring in order to balance a competitive performance with a minimal impact on the overall MAGIC camera design using ray tracing simulations. We further present a comparative study of the overall light throughput based on Monte Carlo simulations and considering the properties of the major hardware elements of an IACT.

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

Implementation of Research and Development Based on Patent Natural Ingredients and Potential Utilization of Tradition Medicine

Directory of Open Access Journals (Sweden)

Tommy Hendrix

2016-12-01

Full Text Available The results of research and development based on natural ingredients for traditional medicines become an interesting topic to discuss at this point; it’s shown from increasing number in utilization. The use of traditional medicine especially on natural ingredients at this moment becomes effective solution to increase the level of market acceptance in herbal extracts, including an affordable purchase from potential utilization of natural resources which are owned. By using Matheo Patent XE Ver 10.2 as methodology of searching, we can know potentials useful through strategy, research and development, patent analysis and patent collaboration among users in utilization of Natural Ingredient for Traditional Medicine. From the data result shows majority in the field of chemistry for human necessity related to Health; Amusement; Medical or Veterinary Science; Hygiene sectors with total patent 108, family 65. The use of patent analysis is a way to find how the development of technology and products that have been produced and how commercial processes connecting with technology users, especially in traditional medicine. From the data that exist in particular of patents, it is critical to identify the number of patents that has been registered through the innovation process development including technology dissemination is used.

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Synthesis of highly integrated optical network based on microdisk-resonator add-drop filters in silicon-on-insulator technology

Science.gov (United States)

Kaźmierczak, Andrzej; Dortu, Fabian; Giannone, Domenico; Bogaerts, Wim; Drouard, Emmanuel; Rojo-Romeo, Pedro; Gaffiot, Frederic

2009-10-01

We analyze a highly compact optical add-drop filter topology based on a pair of microdisk resonators and a bus waveguide intersection. The filter is further assessed on an integrated optical 4×4 network for optical on-chip communication. The proposed network structure, as compact as 50×50 μm, is fabricated in a CMOS-compatible process on a silicon-on-insulator (SOI) substrate. Finally, the experimental results demonstrate the proper operation of the fabricated devices.

Technologies and Reformed-Based Science Instruction: The Examination of a Professional Development Model Focused on Supporting Science Teaching and Learning with Technologies

Science.gov (United States)

Campbell, Todd; Longhurst, Max L.; Wang, Shiang-Kwei; Hsu, Hui-Yin; Coster, Dan C.

2015-10-01

While access to computers, other technologies, and cyber-enabled resources that could be leveraged for enhancing student learning in science is increasing, generally it has been found that teachers use technology more for administrative purposes or to support traditional instruction. This use of technology, especially to support traditional instruction, sits in opposition to most recent standards documents in science education that call for student involvement in evidence-based sense-making activities. Many see technology as a potentially powerful resource that is reshaping society and has the potential to do the same in science classrooms. To consider the promise of technology in science classrooms, this research investigated the impact of a professional development project focused on enhancing teacher and student learning by using information and communication technologies (ICTs) for engaging students in reformed-based instruction. More specifically, these findings revealed positive teacher outcomes with respect to reformed-based and technology-supported instruction and increased ICT and new literacies skills. When considering students, the findings revealed positive outcomes with respect to ICT and new literacies skills and student achievement in science.

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

International Nuclear Information System (INIS)

Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

2015-01-01

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

Science.gov (United States)

Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

2017-02-28

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Novel Concepts for Silicon Based Photovoltaics and Photoelectrochemistry

NARCIS (Netherlands)

Han, L.

2015-01-01

Long term concerns about climate change and fossil fuel depletion will require a transition towards energy systems powered by solar radiation or other renewable sources. Novel concepts based on silicon materials and devices are investigated for applications in the next generation photovoltaic (PV)

Angle-resolved diffraction grating biosensor based on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

2016-03-07

In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

Science.gov (United States)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Solidification phenomena in nickel base brazes containing boron and silicon

International Nuclear Information System (INIS)

Tung, S.K.; Lim, L.C.; Lai, M.O.

1996-01-01

Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

From silicon to organic nanoparticle memory devices.

Science.gov (United States)

Tsoukalas, D

2009-10-28

After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

International Nuclear Information System (INIS)

Kato, Y K

2015-01-01

Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies. (viewpoint)

Gamma Large Area Silicon Telescope (GLAST)

International Nuclear Information System (INIS)

Godfrey, G.L.

1993-11-01

The recent discoveries and excitement generated by EGRET have prompted an investigation into modern technologies ultimately leading to the next generation space-based gamma ray telescope. The goal is to design a detector that will increase the data acquisition rate by almost two orders of magnitude beyond EGRET, while at the same time improving on the angular resolution, the energy measurement of reconstructed gamma rays, and the triggering capability of the instrument. The GLAST proposal is based on the assertion that silicon particle detectors are the technology of choice for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggering. The GLAST detector is roughly modeled after EGRET in that a tracking module precedes a calorimeter. The GLAST Tracker has planes of thin radiatior interspersed with planes of crossed-strip (x,y) 300-μm-pitch silicon detectors to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm in track fitting resulting in an angular resolution of 0.1 degree at high energy (the low energy angular resolution at 100 MeV would be about 2 degree, limited by multiple scattering). A possible GLAST calorimeter is made of a mosaic of Csl crystals of order 10 r.l. in depth, with silicon photodiodes readout. The increased depth of the GLAST calorimeter over EGRET's extends the energy range to about 300 GeV

Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications

Directory of Open Access Journals (Sweden)

Weifeng Zhang

2016-11-01

Full Text Available Silicon photonics with advantages of small footprint, compatibility with the mature CMOS fabrication technology, and its potential for seamless integration with electronics is making a significant difference in realizing on-chip integration of photonic systems. A microdisk resonator (MDR with a strong capacity in trapping and storing photons is a versatile element in photonic integrated circuits. Thanks to the large index contrast, a silicon-based MDR with an ultra-compact footprint has a great potential for large-scale and high-density integrations. However, the existence of multiple whispering gallery modes (WGMs and resonance splitting in an MDR imposes inherent limitations on its widespread applications. In addition, the waveguide structure of an MDR is incompatible with that of a lateral PN junction, which leads to the deprivation of its electrical tunability. To circumvent these limitations, in this paper we propose a novel design of a silicon-based MDR by introducing a specifically designed slab waveguide to surround the disk and the lateral sides of the bus waveguide to suppress higher-order WGMs and to support the incorporation of a lateral PN junction for electrical tunability. An MDR based on the proposed design is fabricated and its optical performance is evaluated. The fabricated MDR exhibits single-mode operation with a free spectral range of 28.85 nm. Its electrical tunability is also demonstrated and an electro-optic frequency response with a 3-dB modulation bandwidth of ∼30.5 GHz is measured. The use of the fabricated MDR for the implementation of an electrically tunable optical delay-line and a tunable fractional-order temporal photonic differentiator is demonstrated.

Fast neutron dosimeter with wide base silicon diode

International Nuclear Information System (INIS)

Ma Lu

1986-01-01

This paper briefly introduces a wide base silicon diode fast neutron dosimeter with wide measuring range and good energy response to fast neutron. It is suitable to be used to detect fast neutrons in the mixed field of γ-ray, thermal neutrons and fast neutrons

Obtaining of polycrystalline silicon for semiconductor industry

International Nuclear Information System (INIS)

Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

1996-01-01

The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

[Progress of sulfur fumigation and modern processing technology of Chinese traditional medicines].

Science.gov (United States)

Lu, Tu-Lin; Shan, Xin; Li, Lin; Mao, Chun-Qin; Ji, De; Yin, Fang-Zhou; Lang, Yong-Ying

2014-08-01

Infestation, moldy and other phenomenon in the processing and storage of Chinese herbal medicines is a problem that faced in the production of Chinese traditional medicine. The low productivity of traditional processing methods can not guarantee the quality of Chinese herbal medicines. Sulfur fumigation is the first choice of grassroots to process the Chinese herbal medicine with its low cost and easy operation. Sulfur fumigation can solve some problems in the processing and storage of Chinese herbal medicines, but modern pharmacological studies show that long-term use of Chinese traditional medicine which is fumigated by sulfur can cause some serious harm to human liver, kidney and other organs. This paper conducts a review about the application history of sulfur fumigation, its influence to the quality of Chinese herbal medicines as well as domestic and foreign limits to sulfur quantity, and a brief introduction of the status of modern processing technologies in the processing of food and some Chinese herbal medicines, the problems ex- isting in the Chinese herbal medicines processing, which can provide a reference basis for the further research, development and application of investigating alternative technologies of sulfur fumigation.

Building the Knowledge Base to Support the Automatic Animation Generation of Chinese Traditional Architecture

Science.gov (United States)

Wei, Gongjin; Bai, Weijing; Yin, Meifang; Zhang, Songmao

We present a practice of applying the Semantic Web technologies in the domain of Chinese traditional architecture. A knowledge base consisting of one ontology and four rule bases is built to support the automatic generation of animations that demonstrate the construction of various Chinese timber structures based on the user's input. Different Semantic Web formalisms are used, e.g., OWL DL, SWRL and Jess, to capture the domain knowledge, including the wooden components needed for a given building, construction sequence, and the 3D size and position of every piece of wood. Our experience in exploiting the current Semantic Web technologies in real-world application systems indicates their prominent advantages (such as the reasoning facilities and modeling tools) as well as the limitations (such as low efficiency).

Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Optical nano artifact metrics using silicon random nanostructures

Science.gov (United States)

Matsumoto, Tsutomu; Yoshida, Naoki; Nishio, Shumpei; Hoga, Morihisa; Ohyagi, Yasuyuki; Tate, Naoya; Naruse, Makoto

2016-08-01

Nano-artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, expensive and huge experimental apparatuses, such as scanning electron microscopy, have been required in the former studies. Herein, we demonstrate an optical approach to characterise the nanoscale-precision signatures of silicon random structures towards realising low-cost and high-value information security technology. Unique and versatile silicon nanostructures are generated via resist collapse phenomena, which contains dimensions that are well below the diffraction limit of light. We exploit the nanoscale precision ability of confocal laser microscopy in the height dimension; our experimental results demonstrate that the vertical precision of measurement is essential in satisfying the performances required for artifact metrics. Furthermore, by using state-of-the-art nanostructuring technology, we experimentally fabricate clones from the genuine devices. We demonstrate that the statistical properties of the genuine and clone devices are successfully exploited, showing that the liveness-detection-type approach, which is widely deployed in biometrics, is valid in artificially-constructed solid-state nanostructures. These findings pave the way for reasonable and yet sufficiently secure novel principles for information security based on silicon random nanostructures and optical technologies.

Plasmonic and silicon spherical nanoparticle antireflective coatings

Science.gov (United States)

Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

2016-03-01

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Chemical and Sensory Evaluation of Silicone and Polylactic Acid-Based Remedial Treatments for Elevated Methoxypyrazine Levels in Wine

Directory of Open Access Journals (Sweden)

Andreea Botezatu

2016-09-01

Full Text Available Alkylmethoxypyrazines (MPs are a class of compounds that can elicit undesirable aroma and flavor characteristics in wine, and resist remediation using traditional wine making approaches. MPs are grape-derived constituents as well as contaminants from Coccinellidae beetles present during wine processing; the latter eliciting an off-flavor referred to as ‘ladybug taint’. In this study we investigated the capacity of two plastic polymers—one silicone-based, the other polylactic acid-based—applied with varying surface areas to reduce concentrations of isopropylmethoxypyrazine (IPMP, sec-butylmethoxypyrazine (SBMP and isobutylmethoxypyrazine (IBMP in a Merlot wine using multi-dimensional gas chromatography coupled with mass spectrometry and headspace solid phase microextraction (SPME-MDGCMS. The impact of treatments on the sensory characteristics of the wine (descriptive analysis and volatile aroma compounds (VOCs (SPME-MDGCMS was also investigated. Results showed substantial reductions for all of the target odorants: up to 38%, 44% and 39% for IPMP, SBMP and IBMP, respectively, for the silicone polymer, and up to 75%, 78% and 77% for IPMP, SBMP and IBMP, respectively, for the polylactic acid polymer. These polymers had no or minimal effect on VOCs at applications of 200 cm2/L for silicone or for all polylactic acid treatments. Sensory impacts were less clear, but generally showed minimal effect from the treatments. Taken overall, the data confirm the utility of both polylactic acid and silicone polymers in reducing elevated levels of grape-derived MPs, as well as potentially improving wine contaminated by ladybug taint.

Silicon solar cell technology state of the art and a proposed double sided cell

International Nuclear Information System (INIS)

Seddik, M.M.

1987-08-01

A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics

Science.gov (United States)

Stranz, A.; Sökmen, Ü.; Wehmann, H.-H.; Waag, A.; Peiner, E.

2010-09-01

Si-based nanopillars of various sizes were fabricated by lateral structuring using anisotropic etching and thermal oxidation. We obtained pillars of diameter <500 nm, about 25 μm in height, with an aspect ratio of more than 50. The distance between pillars was varied from 500 nm to 10 μm. Besides the fabrication and structural characterization of silicon nanopillars, implementation of adequate metrology for measuring single pillars is described. Commercial tungsten probes, self-made gold probes, and piezoresistive silicon cantilever probes were used for measurements of nanopillars in a scanning electron microscope (SEM) equipped with nanomanipulators.

Quadruple-Junction Thin-Film Silicon-Based Solar Cells

NARCIS (Netherlands)

Si, F.T.

2017-01-01

The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

International Nuclear Information System (INIS)

Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

2010-01-01

The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

Science.gov (United States)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

TwinFocus, a concentrated photovoltaic module based on mature technologies

Directory of Open Access Journals (Sweden)

Antonini Piergiorgio

2014-01-01

Full Text Available Among solar power generation, concentrated photovoltaics (CPV based on multijunction (MJ solar cells, is one of the most promising technology for hot climates. The fact that multijunction solar cells based on direct band gap semiconductors demonstrate lower dependence on temperature than silicon solar cells boosted their use in concentrated photovoltaics modules. Departing from the mainstream design of Fresnel lenses, the CPV module based on TwinFocus design with off-axis quasi parabolic mirrors differentiates itself for its compactness and the possibility of easy integration also in roof-top applications. A detailed description of the module and of the systems will be given together with measured performances, and expectations for the next release.

Between tradition and technological innovation: challenges to lime Heritage conservation

Directory of Open Access Journals (Sweden)

Marluci Menezes

2016-01-01

Full Text Available The aim is to discuss the relationship between traditional and scientific technological knowledge as innovative and fundamental to heritage conservation. It is argued that this innovation does not necessarily come from scientific knowledge, but potentially from a wise articulation between these two types of knowledge. This discussion starts from an already long process of reflection on lime heritage conservation, as developed in LNEC from research projects.

The status of silicon ribbon growth technology for high-efficiency silicon solar cells

Science.gov (United States)

Ciszek, T. F.

1985-01-01

More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

Characterization of silicon- and carbon-based composite anodes for lithium-ion batteries

International Nuclear Information System (INIS)

Khomenko, Volodymyr G.; Barsukov, Viacheslav Z.

2007-01-01

In recent years development of active materials for negative electrodes has been of great interest. Special attention has been focused on the active materials possessing higher reversible capacity than that of conventional graphite. In the present work the electrochemical performance of some carbon/silicon-based materials has been analyzed. For this purpose various silicon-based composites were prepared using such carbon materials as graphite, hard carbon and graphitized carbon black. An analysis of charging-discharging processes at electrodes based on different carbon materials has shown that graphite modified with silicon is the most promising anode material. It has also been revealed that the irreversible capacity mainly depends on the content of Si. An optimum content of Si has been determined with taking into account that high irreversible capacity is not suitable for practical application in lithium-ion batteries. This content falls within the range of 8-10 wt%. The reversible capacity of graphite modified with 8 wt% carbon-coated Si was as high as 604 mAh g -1 . The irreversible capacity loss with this material was as low as 8.1%. The small irreversible capacity of the material allowed developing full lithium-ion rechargeable cells in the 2016 coin cell configuration. Lithium-ion batteries based on graphite modified with silicon show gravimetric and volumetric specific energy densities which are higher by approximately 20% than those for a lithium-ion battery based on natural graphite

Lithium ion batteries based on nanoporous silicon

Science.gov (United States)

Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

2015-09-22

A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Grandma's Games Project: Bridging Tradition and Technology Mediated Education

Directory of Open Access Journals (Sweden)

Marina Vasileva

2014-02-01

Full Text Available This article presents a project entitled "Grandma’s games", following a research idea to enrich the educational process of K9 students by introducing the traditional children games of our ancestors in the learning environment, revived and adapted for modern students with the aid of information and communication technology. While creating a strong connection between our heritage and the modern educational trends, the project’s intention goes beyond mere fulfilment of educational goals, striving to increase the interest and motivation of primary education students to develop their creativity and originality while learning, with respect of their own personal preferences and cultural heritage. The "Grandma’s games" research project engaged twelve traditional games in the educational activities at primary schools from both rural and non-rural environments in Republic of Macedonia. Descriptive statistics was applied on the data set sampled from the extensive survey conducted among teachers in these schools, to illustrate the benefits from the application of the Grandma’s games in educational process.

Super soft silicone elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

2015-01-01

Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

Natural language processing-based COTS software and related technologies survey.

Energy Technology Data Exchange (ETDEWEB)

Stickland, Michael G.; Conrad, Gregory N.; Eaton, Shelley M.

2003-09-01

Natural language processing-based knowledge management software, traditionally developed for security organizations, is now becoming commercially available. An informal survey was conducted to discover and examine current NLP and related technologies and potential applications for information retrieval, information extraction, summarization, categorization, terminology management, link analysis, and visualization for possible implementation at Sandia National Laboratories. This report documents our current understanding of the technologies, lists software vendors and their products, and identifies potential applications of these technologies.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

Science.gov (United States)

Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

NARCIS (Netherlands)

Munyeme, Geoffrey

2003-01-01

We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

Science.gov (United States)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Traditional Technology of Chromium-Tungsten Steels Facing, its Disadvantages and Suggestions for their Eliminations

OpenAIRE

Valuev, Denis Viktorovich; Malushin, N. N.; Valueva, Anna Vladimirovna; Dariev, R. S.; Mamadaliev, R. A.

2016-01-01

To reveal the disadvantages of the traditional technology of facing with chromium-tungsten steels analysis of the given technology was completed. The analysis showed that the main disadvantages of the technology are high-temperature heating and underutilization of high-alloyed metal properties. To eliminate the disadvantages we developed the methods of facing allowing obtaining faced metal which state is close to that of the hardened one without cracks.

Integration Science and Technology of Silicon-Based Ceramics and Composites:Technical Challenges and Opportunities

Science.gov (United States)

Singh, M.

2013-01-01

Ceramic integration technologies enable hierarchical design and manufacturing of intricate ceramic and composite parts starting with geometrically simpler units that are subsequently joined to themselves and/or to metals to create components with progressively higher levels of complexity and functionality. However, for the development of robust and reliable integrated systems with optimum performance for high temperature applications, detailed understanding of various thermochemical and thermomechanical factors is critical. Different technical approaches are required for the integration of ceramic to ceramic and ceramic to metal systems. Active metal brazing, in particular, is a simple and cost-effective method to integrate ceramic to metallic components. Active braze alloys usually contain a reactive filler metal (e.g., Ti, Cr, V, Hf etc) that promotes wettability and spreading by inducing chemical reactions with the ceramics and composites. In this presentation, various examples of brazing of silicon nitride to themselves and to metallic systems are presented. Other examples of joining of ceramic composites (C/SiC and SiC/SiC) using ceramic interlayers and the resulting microstructures are also presented. Thermomechanical characterization of joints is presented for both types of systems. In addition, various challenges and opportunities in design, fabrication, and testing of integrated similar (ceramic-ceramic) and dissimilar (ceramic-metal) material systems will be discussed. Potential opportunities and need for the development of innovative design philosophies, approaches, and integrated system testing under simulated application conditions will also be presented.

Quantitative measurements of C-reactive protein using silicon nanowire arrays

Directory of Open Access Journals (Sweden)

Min-Ho Lee

2008-03-01

Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

International Nuclear Information System (INIS)

Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

2009-01-01

Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Peucheret, Christophe

2012-01-01

We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

A miniaturized silicon based device for nucleic acids electrochemical detection

Directory of Open Access Journals (Sweden)

Salvatore Petralia

2015-12-01

Full Text Available In this paper we describe a novel portable system for nucleic acids electrochemical detection. The core of the system is a miniaturized silicon chip composed by planar microelectrodes. The chip is embedded on PCB board for the electrical driving and reading. The counter, reference and work microelectrodes are manufactured using the VLSI technology, the material is gold for reference and counter electrodes and platinum for working electrode. The device contains also a resistor to control and measuring the temperature for PCR thermal cycling. The reaction chamber has a total volume of 20 μL. It is made in hybrid silicon–plastic technology. Each device contains four independent electrochemical cells.Results show HBV Hepatitis-B virus detection using an unspecific DNA intercalating redox probe based on metal–organic compounds. The recognition event is sensitively detected by square wave voltammetry monitoring the redox signals of the intercalator that strongly binds to the double-stranded DNA. Two approaches were here evaluated: (a intercalation of electrochemical unspecific probe on ds-DNA on homogeneous solution (homogeneous phase; (b grafting of DNA probes on electrode surface (solid phase.The system and the method here reported offer better advantages in term of analytical performances compared to the standard commercial optical-based real-time PCR systems, with the additional incomes of being potentially cheaper and easier to integrate in a miniaturized device. Keywords: Electrochemical detection, Real time PCR, Unspecific DNA intercalator

Will silicon be the photonic material of the third millenium?

International Nuclear Information System (INIS)

Pavesi, L

2003-01-01

Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

Direct modification of silicon surface by nanosecond laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

2013-10-01

Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

Applying Sensor-Based Technology to Improve Construction Safety Management.

Science.gov (United States)

Zhang, Mingyuan; Cao, Tianzhuo; Zhao, Xuefeng

2017-08-11

Construction sites are dynamic and complicated systems. The movement and interaction of people, goods and energy make construction safety management extremely difficult. Due to the ever-increasing amount of information, traditional construction safety management has operated under difficult circumstances. As an effective way to collect, identify and process information, sensor-based technology is deemed to provide new generation of methods for advancing construction safety management. It makes the real-time construction safety management with high efficiency and accuracy a reality and provides a solid foundation for facilitating its modernization, and informatization. Nowadays, various sensor-based technologies have been adopted for construction safety management, including locating sensor-based technology, vision-based sensing and wireless sensor networks. This paper provides a systematic and comprehensive review of previous studies in this field to acknowledge useful findings, identify the research gaps and point out future research directions.

[Analysis on medication regularity of modern traditional Chinese medicines in treating melancholia based on data mining technology].

Science.gov (United States)

Zhao, Yan-qing; Teng, Jing; Yang, Hong-jun

2015-05-01

To analyze the prescription and medication regularities of traditional Chinese medicines in the treatment of melancholia in the Chinese journal full text database (CNKI), Wanfang Data knowledge service platform, VIP, Chinese biomedical literature database (CBM) in based on the traditional Chinese medicine inheritance support platform software, in order to provide reference for further mining traditional Chinese medicines for the treatment of melancholia and new drug development. The traditional Chinese medicine inheritance support platform software V2.0 was used to establish the prescription database of traditional Chinese medicines for treating melancholia. The software integrated data mining method was adopted to analyze four Qis, five flavors, meridian distribution, frequency statistics, syndrome distribution, composition regularity and new prescriptions. Totally 358 prescriptions for treating melancholia were analyzed to determine the frequency of prescription drugs, commonly used drug pairs and combinations and develop 22 new prescriptions. According to this study, prescriptions for treating depression collected in modern literature databases mainly have the effects in soothing liver and resolving melancholia, strengthening spleen and eliminating phlegm, activating and replenishing blood, regulating liver qi, tonifying spleen qi, clearing heat and purging heat, soothing the mind, nourishing yin and tonifying kidney, with neutral drug property and sweet or bitter flavor, and follow the melancholia treatment principle of "regulating qi and opening the mind, regulating qi and empathy".

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

Science.gov (United States)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

High-speed detection at two micrometres with monolithic silicon photodiodes

Science.gov (United States)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Boujmil, M.F.; Ben Rabha, M.; Bessaies, B.

2004-01-01

The aim of this paper is to investigate the structural and optical stability of porous silicon layers (PSLs) planned to be used in silicon solar cells technology. The PSLs were prepared by a HNO 3 /HF vapor etching (VE) based method. Fourier transform infrared (FT-IR) spectroscopy shows that fresh VE-based PSLs contain N-H and Si-F bonds related to a ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 minor phase, and conventional Si-H x and Si-O x bonds. Free air exposures of PSLs without and with UV irradiation lead to oxidation or photo-oxidation of the porous layer, respectively. FT-IR characterisation of the PSLs shows that UV irradiations modify the transformation kinetics replacing instable Si-H x by Si-O x or Si-O-H bonds. When fresh PSLs undergo free air oxidation within 7 days, the surface reflectivity decreases from 10 to about 8%, while it drops to about 4% when a 10 min free air UV irradiation is applied. Long periods of free air oxidation do not ensure the reflectivity to be stable, whereas it becomes stable after only 10 min of UV irradiation. This behaviour was explained taking into account the kinetic differences between oxidation with and without UV irradiation. Fresh VE-based PSLs were found to improve efficiently the photovoltaic (PV) characteristics of crystalline silicon solar cells. The passivating action of VE-based PSLs was discussed. An improvement of the PV performances was observed solely for stable oxidized porous silicon (PS) structures obtained from UV irradiations

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Computer game-based and traditional learning method: a comparison regarding students' knowledge retention.

Science.gov (United States)

Rondon, Silmara; Sassi, Fernanda Chiarion; Furquim de Andrade, Claudia Regina

2013-02-25

Educational computer games are examples of computer-assisted learning objects, representing an educational strategy of growing interest. Given the changes in the digital world over the last decades, students of the current generation expect technology to be used in advancing their learning requiring a need to change traditional passive learning methodologies to an active multisensory experimental learning methodology. The objective of this study was to compare a computer game-based learning method with a traditional learning method, regarding learning gains and knowledge retention, as means of teaching head and neck Anatomy and Physiology to Speech-Language and Hearing pathology undergraduate students. Students were randomized to participate to one of the learning methods and the data analyst was blinded to which method of learning the students had received. Students' prior knowledge (i.e. before undergoing the learning method), short-term knowledge retention and long-term knowledge retention (i.e. six months after undergoing the learning method) were assessed with a multiple choice questionnaire. Students' performance was compared considering the three moments of assessment for both for the mean total score and for separated mean scores for Anatomy questions and for Physiology questions. Students that received the game-based method performed better in the pos-test assessment only when considering the Anatomy questions section. Students that received the traditional lecture performed better in both post-test and long-term post-test when considering the Anatomy and Physiology questions. The game-based learning method is comparable to the traditional learning method in general and in short-term gains, while the traditional lecture still seems to be more effective to improve students' short and long-term knowledge retention.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

Directory of Open Access Journals (Sweden)

Gokhan Sahin

Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Directory of Open Access Journals (Sweden)

Yulong Zhang

2018-05-01

Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.