Investigation of dislocations in 8° off-axis 4H-SiC epilayer

International Nuclear Information System (INIS)

Rui-Xia, Miao; Yu-Ming, Zhang; Yi-Men, Zhang; Xiao-Yan, Tang; Qing-Feng, Gai

2010-01-01

This paper reports that the etching morphology of dislocations in 8° off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer. (condensed matter: structure, thermal and mechanical properties)

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

Energy Technology Data Exchange (ETDEWEB)

Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu [Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

2016-04-11

This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

Closed reduction of displaced or dislocated mandibular condyle fractures in children using threaded Kirschner wire and external rubber traction.

Science.gov (United States)

Kim, J H; Nam, D H

2015-10-01

Most surgeons agree that closed treatment provides the best results for condylar fractures in children. Nevertheless, treatment of the paediatric mandibular condyle fracture that is severely displaced or dislocated is controversial. The purpose of this study was to investigate the long-term clinical and radiological outcomes following the treatment of displaced or dislocated condylar fractures in children using threaded Kirschner wire and external rubber traction. This procedure can strengthen the advantage of closed reduction and make up for the shortcomings of open reduction. From March 1, 2005 to December 25, 2011, 11 children aged between 4 and 12 years with displaced or dislocated mandibular condyle fractures were treated using threaded Kirschner wire and external rubber traction under portable C-arm fluoroscopy. All patients had unilateral displaced or dislocated condylar fractures. The follow-up period ranged from 24 to 42 months (mean 29.3 months). Normal occlusion and pain-free function of the temporomandibular joint, without deviation or limitation of jaw opening, was achieved in all patients. This closed reduction technique in displaced or dislocated condylar fractures in children offers a reliable solution in preventing the unfavourable sequelae of closed treatment and the open technique, such as altered morphology, functional disturbances, and facial nerve damage. Copyright © 2015 International Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.

Dislocation core structures in Si-doped GaN

International Nuclear Information System (INIS)

Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2015-01-01

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8  and (10 ± 1) × 10 9  cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN

Dislocation core structures in Si-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2015-12-14

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

High Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

International Nuclear Information System (INIS)

Kamata, I.; Nagano, M.; Tsuchida, H.; Chen, Y.; Dudley, M.

2009-01-01

Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.

Recombination properties of dislocations in GaN

Science.gov (United States)

Yakimov, Eugene B.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

2018-04-01

The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ˜108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.

Dislocation-induced stress in polycrystalline materials: mesoscopic simulations in the dislocation density formalism

Science.gov (United States)

Berkov, D. V.; Gorn, N. L.

2018-06-01

In this paper we present a simple and effective numerical method which allows a fast Fourier transformation-based evaluation of stress generated by dislocations with arbitrary directions and Burgers vectors if the (site-dependent) dislocation density is known. Our method allows the evaluation of the dislocation stress using a rectangular grid with shape-anisotropic discretization cells without employing higher multipole moments of the dislocation interaction coefficients. Using the proposed method, we first simulate the stress created by relatively simple non-homogeneous distributions of vertical edge and so-called ‘mixed’ dislocations in a disk-shaped sample, which is necessary to understand the dislocation behavior in more complicated systems. The main part of our research is devoted to the stress distribution in polycrystalline layers with the dislocation density rapidly varying with the distance to the layer bottom. Considering GaN as a typical example of such systems, we investigate dislocation-induced stress for edge and mixed dislocations, having random orientations of Burgers vectors among crystal grains. We show that the rapid decay of the dislocation density leads to many highly non-trivial features of the stress distributions in such layers and study in detail the dependence of these features on the average grain size. Finally we develop an analytical approach which allows us to predict the evolution of the stress variance with the grain size and compare analytical predictions with numerical results.

Dislocation density changes in nickel under creep

International Nuclear Information System (INIS)

Moiseeva, I.V.; Okrainets, P.N.; Pishchak, V.K.

1984-01-01

Variation in dislocation density was studied in the process of nickel creep p at t=900 deg c and σ=2 kgf/mm 2 . The dislocation structure was studied independently by the X-ray technique and transmission electron-microscopy. The e two methods show good conformity of results by comparison. It is concluded that independent determination of dislocation density under creep is possible us sing the X-ray technique

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Energy Technology Data Exchange (ETDEWEB)

Pozina, Galia [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Ciechonski, Rafal [GLO AB, Scheelevägen 22, SE-22363 Lund (Sweden); Bi, Zhaoxia [Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); Samuelson, Lars [GLO AB, Scheelevägen 22, SE-22363 Lund (Sweden); Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); Monemar, Bo [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Solid State Physics, Lund University, Box 118, SE-22100 Lund (Sweden); TokyoUniversity of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan)

2015-12-21

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

High dislocation density of tin induced by electric current

International Nuclear Information System (INIS)

Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

2015-01-01

A dislocation density of as high as 10 17 /m 2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10 3 A/ cm 2 . The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

Stress-free states of continuum dislocation fields : Rotations, grain boundaries, and the Nye dislocation density tensor

NARCIS (Netherlands)

Limkumnerd, Surachate; Sethna, James P.

We derive general relations between grain boundaries, rotational deformations, and stress-free states for the mesoscale continuum Nye dislocation density tensor. Dislocations generally are associated with long-range stress fields. We provide the general form for dislocation density fields whose

Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

Leonhardt, Darin; Han, Sang M. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2011-09-12

We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layer suitable for electronic and photovoltaic devices.

Ultrasound as a probe of dislocation density in aluminum

International Nuclear Information System (INIS)

Mujica, Nicolás; Cerda, Maria Teresa; Espinoza, Rodrigo; Lisoni, Judit; Lund, Fernando

2012-01-01

Graphical abstract: Display Omitted - Abstract: Dislocations are at the heart of the plastic behavior of crystalline materials yet it is notoriously difficult to perform quantitative, non-intrusive measurements of their single or collective properties. Dislocation density is a critical variable that determines dislocation mobility, strength and ductility. On the one hand, individual dislocations can be probed in detail with transmission electron microscopy. On the other hand, their collective properties must be simulated numerically. Here we show that ultrasound technology can be used to measure dislocation density. This development rests on theory—a generalization of the Granato–Lücke theory for the interaction of elastic waves with dislocations—and resonant ultrasound spectroscopy (RUS) measurements. The chosen material is aluminum, to which different dislocation contents were induced through annealing and cold-rolling processes. The dislocation densities obtained with RUS compare favorably with those inferred from X-ray diffraction, using the modified Williamson–Hall method.

Determination of dislocation densities in InN

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2012-03-15

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of dislocation density in Zr-2.5Nb pressure tubes by x-ray

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Suk; Isaenkova, Perlovich; Cheong, Y. M.; Kim, S. S.; Yim, K. S.; Kwon, Sang Chul

2000-11-01

For X-ray determination of the dislocation density in CANDU Zr-2.5%Nb pressure tubes, a program was developed, using the Fourier analysis of X-ray line profiles and calculation of dislocation density by values of the coherent block size and the lattice distortion. The coincidence of obtained values of c- and a-dislocations with those, determined by the X-ray method for the same tube in AECL, was assumed to be the main criterion of validity of the developed program. The final variant of the program allowed to attain a rather close coincidence of calculated dislocation densities with results of AECL. The dislocation density was determined in all the zirconium grains with different orientations based on the texture of the stree-relieved CANDU tube. The complete distribution of c-dislocation density in -Zr grains depecding on their crystallographic orientations was constructed. The distribution of a-dislocation density within the texture maximum at L-direction, containing prismatic axes of all grains, was constructed as well. The analysis of obtained distributions testifies that -Zr grains of the stree-relieved CANDU tube significantly differ in their dislocation densities. Plotted diagrams of correlation between the dislocation density and the pole density allow to estimate the actual connection between texture and dislocation distribution in the studied tube. The distributions of volume fractions of all the zirconium grains depending on their dislocation density were calculated both for c- and a-dislocations. The distributions characterizes quantitatively the inhomogeneity of substructure conditions in the stress-relieved CANDU tube. the optimal procedure for determination of Nb content in {beta}-phases of CANDU Zr-2.5%Nb pressure tubes was also established.

Model for the evolution of network dislocation density in irradiated metals

International Nuclear Information System (INIS)

Garner, F.A.; Wolfer, W.G.

1982-01-01

It is a well-known fact that the total dislocation density that evolves in irradiated metals is a strong function of irradiation temperature. The dislocation density comprises two components, however, and only one of these (Frank loops) retains its temperature dependence at high fluence. The network dislocation density approaches a saturation level which is relatively insensitive to starting microstructure, stress, irradiation temperature, displacement rate and helium level. The latter statement is supported in this paper by a review of published microstructural data. A model has been developed to explain the insensitivity to many variables of the saturation network dislocation density in irradiated metals. This model also explains how the rate of approach to saturation can be sensitive to displacement rate and temperature while the saturation level itself is not dependent on temperature

Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes

KAUST Repository

Elafandy, Rami T.

2014-11-13

Semiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

International Nuclear Information System (INIS)

Schujman, Sandra; Schowalter, Leo

2011-01-01

The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

Effects of stitch density and stitch thread thickness on mode II delamination properties of Vectran stitched composites

KAUST Repository

Herwan, J.

2014-11-01

© Institute of Materials, Minerals and Mining 2014. Mode II delamination properties of Vectran stitched composites were investigated, and tabbed end notch flexural specimen testing was used to prevent premature failure. The effects of stitch density and stitch thread thickness were explored, and fibre compaction due to the stitching process was also verified. The results show that, in moderately stitched laminates (low stitch density), the improvement in GIIC was negligible. Crack bridging by the stitch threads at the crack zone were mostly compensated for the effect of fibre compaction, which reduced the GIIC values. Conversely, in densely stitched laminates (high stitch density), GIIC values were improved significantly (2·4 times higher than those of unstitched laminates). The effects of stitch thread thickness appeared to be negligible in moderately stitched laminates. For densely stitched laminates, thicker stitch thread (500 denier) possessed GIIC values that were 45·7% higher than thinner stitch thread (200 denier).

Effects of stitch density and stitch thread thickness on mode II delamination properties of Vectran stitched composites

KAUST Repository

Herwan, J.; Kondo, A.; Morooka, S.; Watanabe, N.

2014-01-01

© Institute of Materials, Minerals and Mining 2014. Mode II delamination properties of Vectran stitched composites were investigated, and tabbed end notch flexural specimen testing was used to prevent premature failure. The effects of stitch density and stitch thread thickness were explored, and fibre compaction due to the stitching process was also verified. The results show that, in moderately stitched laminates (low stitch density), the improvement in GIIC was negligible. Crack bridging by the stitch threads at the crack zone were mostly compensated for the effect of fibre compaction, which reduced the GIIC values. Conversely, in densely stitched laminates (high stitch density), GIIC values were improved significantly (2·4 times higher than those of unstitched laminates). The effects of stitch thread thickness appeared to be negligible in moderately stitched laminates. For densely stitched laminates, thicker stitch thread (500 denier) possessed GIIC values that were 45·7% higher than thinner stitch thread (200 denier).

Investigation of Character and Spatial Distribution of Threading Edge Dislocations in 4H-SiC Epilayers by High-Resolution Topography

International Nuclear Information System (INIS)

Kamata, I.; Nagano, M.; Tsuchida, H.; Chen, Y.; Dudley, M.

2009-01-01

Topography image variation of threading edge dislocations (TEDs) in 4H-SiC epilayers has been investigated by grazing incidence high-resolution synchrotron topography. Six different images of TEDs resulting from an angle between the diffraction vector and the TED Burgers vector were confirmed by correlation between experimental topography images and simulation results. The TED-type distribution, dependent on the direction of the TED Burger vector, was examined on epitaxial wafers, while the spatial distribution of TEDs on a whole 2 in wafer along (1 1 2 0) and (1 1 0 0) was investigated.

Geometrically necessary dislocation densities in olivine obtained using high-angular resolution electron backscatter diffraction

Energy Technology Data Exchange (ETDEWEB)

Wallis, David, E-mail: davidwa@earth.ox.ac.uk [Department of Earth Sciences, University of Oxford, South Parks Road, Oxford, Oxfordshire, OX1 3AN (United Kingdom); Hansen, Lars N. [Department of Earth Sciences, University of Oxford, South Parks Road, Oxford, Oxfordshire, OX1 3AN (United Kingdom); Ben Britton, T. [Department of Materials, Imperial College London, Royal School of Mines, Exhibition Road, London SW7 2AZ (United Kingdom); Wilkinson, Angus J. [Department of Materials, University of Oxford, Parks Road, Oxford, Oxfordshire, OX1 3PH (United Kingdom)

2016-09-15

Dislocations in geological minerals are fundamental to the creep processes that control large-scale geodynamic phenomena. However, techniques to quantify their densities, distributions, and types over critical subgrain to polycrystal length scales are limited. The recent advent of high-angular resolution electron backscatter diffraction (HR-EBSD), based on diffraction pattern cross-correlation, offers a powerful new approach that has been utilised to analyse dislocation densities in the materials sciences. In particular, HR-EBSD yields significantly better angular resolution (<0.01°) than conventional EBSD (~0.5°), allowing very low dislocation densities to be analysed. We develop the application of HR-EBSD to olivine, the dominant mineral in Earth's upper mantle by testing (1) different inversion methods for estimating geometrically necessary dislocation (GND) densities, (2) the sensitivity of the method under a range of data acquisition settings, and (3) the ability of the technique to resolve a variety of olivine dislocation structures. The relatively low crystal symmetry (orthorhombic) and few slip systems in olivine result in well constrained GND density estimates. The GND density noise floor is inversely proportional to map step size, such that datasets can be optimised for analysing either short wavelength, high density structures (e.g. subgrain boundaries) or long wavelength, low amplitude orientation gradients. Comparison to conventional images of decorated dislocations demonstrates that HR-EBSD can characterise the dislocation distribution and reveal additional structure not captured by the decoration technique. HR-EBSD therefore provides a highly effective method for analysing dislocations in olivine and determining their role in accommodating macroscopic deformation. - Highlights: • Lattice orientation gradients in olivine were measured using HR-EBSD. • The limited number of olivine slip systems enable simple least squares inversion for GND

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Liao, Che-Hao; Guo, Wenzhe; Alfaraj, Nasir; Li, Kuang-Hui; Anjum, Dalaver H.; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

KAUST Repository

Sun, Haiding

2017-12-18

We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth

Science.gov (United States)

Bardhan, Abheek; Mohan, Nagaboopathy; Chandrasekar, Hareesh; Ghosh, Priyadarshini; Sridhara Rao, D. V.; Raghavan, Srinivasan

2018-04-01

The bending and interaction of threading dislocations are essential to reduce their density for applications involving III-nitrides. Bending of dislocation lines also relaxes the compressive growth stress that is essential to prevent cracking on cooling down due to tensile thermal expansion mismatch stress while growing on Si substrates. It is shown in this work that surface roughness plays a key role in dislocation bending. Dislocations only bend and relax compressive stresses when the lines intersect a smooth surface. These films then crack. In rough films, dislocation lines which terminate at the bottom of the valleys remain straight. Compressive stresses are not relaxed and the films are relatively crack-free. The reasons for this difference are discussed in this work along with the implications on simultaneously meeting the requirements of films being smooth, crack free and having low defect density for device applications.

A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

KAUST Repository

Mohamed, Mamdouh S.

2015-05-18

The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoretical analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kröner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.

A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

KAUST Repository

Mohamed, Mamdouh S.; Larson, Ben C.; Tischler, Jon Z.; El-Azab, Anter

2015-01-01

The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoretical analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kröner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.

Intermittent dislocation density fluctuations in crystal plasticity from a phase-field crystal model

DEFF Research Database (Denmark)

Tarp, Jens M.; Angheluta, Luiza; Mathiesen, Joachim

2014-01-01

Plastic deformation mediated by collective dislocation dynamics is investigated in the two-dimensional phase-field crystal model of sheared single crystals. We find that intermittent fluctuations in the dislocation population number accompany bursts in the plastic strain-rate fluctuations...... propose a simple stochastic model of dislocation reaction kinetics that is able to capture these statistical properties of the dislocation density fluctuations as a function of shear rate....

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2018-04-01

The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

Changes in W monocrystal dislocation density after electroerosion machininig

International Nuclear Information System (INIS)

Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.

1977-01-01

The variation of the dislocations and microhardness density in surface layers of single crystal tungsten after electro-erosion machining along the plane (100) at pulse energies of 1200, 2500, 5000 μJ and pulse duration of 1 μs has been investigated with a view to determining the optimum value of the intermediate (between processing stages) allowances in the manufacture of parts from single crystals. It is shown that the density of dislocations is determined by pulse energy and that a maximum value for all the machining conditions is observed at a depth of 20 μm, attaining original magnitude at a depth of approximately 100 μm. The microhardness varies similarly between 500-520 and 390-410 H 20

Effect of strain rate and dislocation density on the twinning behavior in tantalum

Energy Technology Data Exchange (ETDEWEB)

Florando, Jeffrey N., E-mail: florando1@llnl.gov; Swift, Damian C.; Barton, Nathan R.; McNaney, James M.; Kumar, Mukul [Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, CA 94550 (United States); El-Dasher, Bassem S. [TerraPower LLC, Bellevue, WA 98005 (United States); Chen, Changqiang [Materials Research Laboratory, University of Illinois at Urbana Champaign, Urbana, IL 61801 (United States); Ramesh, K. T.; Hemker, Kevin J. [Department of Mechanical Engineering, Johns Hopkins University, Baltimore, MD 21218 (United States)

2016-04-15

The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10{sup −4}/s to 10{sup 3}/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77 K at strain rates from 1/s to 10{sup 3}/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, even as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. In addition, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.

Dislocation density evolution in the process of high-temperature treatment and creep of EK-181 steel

Energy Technology Data Exchange (ETDEWEB)

Vershinina, Tatyana, E-mail: vershinina@bsu.edu.ru [Belgorod State National Research University, Pobedy street 85, Belgorod 308015 (Russian Federation); Leont' eva-Smirnova, Maria, E-mail: smirnova@bochvar.ru [Bochvar High-Technology Research Institute of Inorganic Materials, ul. Rogova 5, Moscow 123098 (Russian Federation)

2017-03-15

X-ray diffraction has been used to study the dislocation structure in ferrite-martensite high-chromium steel EK-181 in the states after heat treatment and high-temperature creep. The influence of heat treatment and stress on evolution of lath martensite structure was investigated by and electron back-scattered diffraction. The effect of nitrogen content on the total dislocation density, fraction of edge and screw dislocation segments are analyzed. - Highlights: •Fraction of edge dislocation in quenched state depends on nitrogen concentration. •Nitrogen affects the character of dislocation structure evolution during annealing. •Edge dislocations fraction influences on dislocation density after aging and creep.

Onset of vertical threading dislocations in Si1−xGex/Si (001 at a critical Ge concentration

Directory of Open Access Journals (Sweden)

Fabio Isa

2013-11-01

Full Text Available We show that the Ge concentration in Si1−xGex alloys grown under strong out-of-equilibrium conditions determines the character of the population of threading dislocations (TDs. Above a critical value x ∼ 0.25 vertical TDs dominate over the common slanted ones. This is demonstrated by exploiting a statistically relevant analysis of TD orientation in micrometer-sized Si1−xGex crystals, deposited on deeply patterned Si(001 substrates. Experiments involving an abrupt change of composition in the middle of the crystals clarify the role of misfit-strain versus chemical composition in favoring the vertical orientation of TDs. A scheme invoking vacancy-mediated climb mechanism is proposed to rationalize the observed behavior.

Metal viscoplasticity with two-temperature thermodynamics and two dislocation densities

Science.gov (United States)

Roy Chowdhury, Shubhankar; Kar, Gurudas; Roy, Debasish; Reddy, J. N.

2018-03-01

Posed within the two-temperature theory of non-equilibrium thermodynamics, we propose a model for thermoviscoplastic deformation in metals. We incorporate the dynamics of dislocation densities-mobile and forest—that play the role of internal state variables in the formulation. The description based on two temperatures appears naturally when one recognizes that the thermodynamic system undergoing viscoplastic deformation is composed of two weakly interacting subsystems, viz. a kinetic-vibrational subsystem of the vibrating atomic lattices and a configurational subsystem of the slower degrees of freedom relating to defect motion, each with its own temperature. Starting with a basic model that involves only homogeneous deformation, a three-dimensional model for inhomogeneous viscoplasticity applicable to finite deformation is charted out in an overstress driven viscoplastic deformation framework. The model shows how the coupled evolutions of mobile and forest dislocation densities, which are critically influenced by the dynamics of configurational temperature, govern the strength and ductility of the metal. Unlike most contemporary models, the current proposal also affords a prediction of certain finer details as observed in the experimental data on stress-strain behaviour of metals and this in turn enhances the understanding of the evolving and interacting dislocation densities.

Correlation between the sub-structure parameters and the manufacturing technologies of metal threads in historical textiles using X-ray line profile analysis

Energy Technology Data Exchange (ETDEWEB)

Csiszar, Gabor; Ungar, Tamas [Eoetvoes University Budapest, Department of Materials Physics, Budapest (Hungary); Jaro, Marta [Hungarian National Museum, Budapest (Hungary)

2013-06-15

Micro-structure can talk when documentation is missing. In ancient Roman or medieval periods, kings, queens, or just rich people decorated their clothes or even their horse covers richly with miniature jewels or metal threads. The origin or the fabrication techniques of these ancient threads is often unknown. Thirteen thread samples made of gold or gilt silver manufactured during the last sixteen hundred years are investigated for the micro-structure in terms of dislocation density, crystallite size, and planar defects. In a few cases, these features are compared with sub-structure of similar metallic threads prepared in modern, twentieth century workshops. The sub-structure is determined by X-ray line profile analysis, using high resolution diffractograms with negligible instrumental broadening. On the basis of the sub-structure parameters, we attempt to assess the metal-threads manufacturing procedures on samples stemming from the fourth century A.D. until now. (orig.)

Evaluation of dislocation density in copper and brass α deformed by XRD peak width analysis

International Nuclear Information System (INIS)

Sousa, Talita Gama de

2014-01-01

The determination of dislocation density in metallic materials has been available for many years in scientific environment. This is due to the fact that the dislocations are the main responsible for plastic deformation, which, thereafter, markedly influences the mechanical properties. In this work, the dislocation density was analyzed through peak broadening of Xray diffraction (XRD) using Convolutional Multiple Whole Profile (CMWP) program. The measurements obtained by XRD were compared with those obtained from images observed by transmission electronic microscopy (TEM). The materials used in this study were pure copper and brass α as alloy 268 (6 % Cu and 34 % Zn), deformed by rolling and ECA (equal channel angular extrusion) processes. The results indicate that the XRD is a powerful tool for the characterization of the microstructure in relation to the dislocation density, as they were consistent to the TEM measurements, and also showed good relationship with measurements of hardness. Furthermore, through the dislocation density it was possible to verify the influence of stacking fault energy (SFE) in the evolution of the copper samples deformation process and its alloy, and that the presence of texture in rolled samples did not impair the measurements obtained by XRD technique. (author)

Determination of the extinction factor in function of the density of dislocations

International Nuclear Information System (INIS)

Macias B, L.R.

1991-12-01

There are exist three basic types of crystalline lattice defects: point, line (or dislocations) and surface defects. Such defects may be incorporated intentionally to produce desired mechanical and physical properties. This report presents a FORTRAN language program to calculate the extinction factor in samples of polycrystalline copper as function of the dislocations density. (Author)

Dislocation density and mechanical threshold stress in OFHC copper subjected to SHPB loading and plate impact

Energy Technology Data Exchange (ETDEWEB)

Hu, Qiushi [National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan, 621900 (China); Zhao, Feng, E-mail: ifpzfeng@163.com [National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan, 621900 (China); Fu, Hua; Li, Kewu [National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan, 621900 (China); Liu, Fusheng [Key Laboratory of Advanced Technologies of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031 (China)

2017-05-17

The dislocation density and mechanical threshold stress (MTS) of oxygen-free high-thermal-conductivity (OFHC) copper loaded at strain rates in the range of 10{sup 2} to 10{sup 6} s{sup −1} were measured. Moderate-strain-rate (10{sup 2} to 10{sup 4} s{sup −1}) experiments were performed using a Split Hopkinson Pressure Bar (SHPB). A steel collar was placed around each specimen to control the maximum loading strain. High-strain-rate (10{sup 5} to 10{sup 6} s{sup −1}) experiments were carried out using a 57-mm-bore single-stage gas gun. The radial release effect was eliminated using the momentum trapping technique. The loaded samples were recovered, and the dislocation characteristics and dislocation density were determined by X-ray diffraction profile analysis. The fraction of the screw dislocation was found to decrease with increasing loading strain and strain rate. The dislocation density was found to lie between 1.8×10{sup 14} and 2.2×10{sup 15} m{sup −2}. Quasi-static reload compression tests were performed on the recovered samples at room temperature. The mechanical threshold stress (or the flow stress at 0 K) was obtained by fitting the reload stress–strain data to the MTS model. The results of analysis of the equivalent strain, mechanical threshold stress, and dislocation density measurements suggest that the relation between the mechanical threshold stress and the dislocation density can be described well by the Taylor relationship.

New vacancy source in ultrahigh-purity aluminium single crystals with a low dislocation density

Energy Technology Data Exchange (ETDEWEB)

Mizuno, Kaoru; Yamamoto, Satoshi [Shimane Univ., Faculty of Science and Engineering, Matsue, Shimane (Japan); Morikawa, Kimihiko [Hokkaido Univ., Institute for Low Temperature Science, Sapporo, Hokkaido (Japan); Kuga, Masanori [Kanazawa Univ., Faculty of Science, Kanazawa, Ishikawa (Japan); Okamoto, Hiroyuki [Kanazawa Univ., Faculty of Medicine, Kanazawa, Ishikawa (Japan); Hashimoto, Eiji [Hiroshima Univ., Hiroshima Synchrotron Radiation Center, Higashi-Hiroshima, Hiroshima (Japan)

2004-05-01

The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographys taken after temperature rose to 300degC from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. (author)

New vacancy source in ultrahigh-purity aluminium single crystals with a low dislocation density

International Nuclear Information System (INIS)

Mizuno, Kaoru; Yamamoto, Satoshi; Morikawa, Kimihiko; Kuga, Masanori; Okamoto, Hiroyuki; Hashimoto, Eiji

2004-01-01

The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographys taken after temperature rose to 300degC from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. (author)

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

International Nuclear Information System (INIS)

Berecz, Tibor; Jenei, Péter; Csóré, András; Lábár, János; Gubicza, Jenő

2016-01-01

The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by electron backscatter diffraction (EBSD). Concomitant transmission electron microscopy (TEM) investigation revealed that the laths contain subgrains with the size between 50 and 100 nm. A novel evaluation procedure of EBSD images was elaborated for the determination of the density and the space distribution of geometrically necessary dislocations from the misorientation distribution. The total dislocation density obtained by X-ray diffraction line profile analysis was in good agreement with the value determined by EBSD, indicating that the majority of dislocations formed due to martensitic transformation during quenching are geometrically necessary dislocations.

A numerical spectral approach to solve the dislocation density transport equation

International Nuclear Information System (INIS)

Djaka, K S; Taupin, V; Berbenni, S; Fressengeas, C

2015-01-01

A numerical spectral approach is developed to solve in a fast, stable and accurate fashion, the quasi-linear hyperbolic transport equation governing the spatio-temporal evolution of the dislocation density tensor in the mechanics of dislocation fields. The approach relies on using the Fast Fourier Transform algorithm. Low-pass spectral filters are employed to control both the high frequency Gibbs oscillations inherent to the Fourier method and the fast-growing numerical instabilities resulting from the hyperbolic nature of the transport equation. The numerical scheme is validated by comparison with an exact solution in the 1D case corresponding to dislocation dipole annihilation. The expansion and annihilation of dislocation loops in 2D and 3D settings are also produced and compared with finite element approximations. The spectral solutions are shown to be stable, more accurate for low Courant numbers and much less computation time-consuming than the finite element technique based on an explicit Galerkin-least squares scheme. (paper)

Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kuwahara, Takaaki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kuwano, Noriyuki [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Kurisu, Akihiko; Okada, Narihito; Tadatomo, Kazuyuki [Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

2012-03-15

A microstructure in an InGaN/GaN layer grown at the semipolar direction was observed in detail by means of transmission electron microscopy (TEM) in order to analyze the behaviour of dislocations. A (11 anti 22) GaN layer was first deposited on a maskless r (1 anti 102)-plane patterned-substrate, and then an In{sub x} Ga{sub 1-x}N (x =0.10, 0.24) was overgrown to be about 1 {mu}m in thickness. Dislocations near the interface of InGaN/GaN are classified into several types: 1 Threading dislocations lying on (0001). 2. Misfit dislocations lying on the interface of InGaN/GaN. 3. Dislocations along [1 anti 100] at a certain distance from the interface. 4. Dislocations newly formed at the interface and developing along [11 anti 20] on (0001). 5. Partial dislocations accompanied with a stacking fault on (0001). It was found that the misfit dislocations are arrayed in pairs at the direction along [1 anti 100] on the interface of (11 anti 22). Burgers vector of the misfit dislocations was found to be B = <2 anti 1 anti 13>/3. In case of B = [ anti 1 anti 123]/3, they are edge dislocations. The densities of dislocations and stacking faults increase with the In-content in InGaN. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hardening and softening analysis of pure titanium based on the dislocation density during torsion deformation

Energy Technology Data Exchange (ETDEWEB)

Chen, Han; Li, Fuguo, E-mail: fuguolx@nwpu.edu.cn; Li, Jinghui; Ma, Xinkai; Li, Jiang; Wan, Qiong

2016-08-01

The hardening and softening phenomena during torsion deformation are studied based on the Taylor dislocation model for pure titanium. The hardening and softening phenomena are observed through the hardness analysis during micro-indentation test and micro-hardness test. Besides, the variations of indentation size also verify the existence of hardening and softening phenomena during torsion. The variations of geometric necessary dislocations (GNDs) and statistic store dislocations (SSDs) state that the positions of high dislocation density and low dislocation density correspond to the positions of hardening and softening. The results from the microstructure, grain boundaries evolution and twins analysis indicate the twins play an important role in appearance of hardening and softening phenomena. The appearance of hardening and softening phenomena are attributed to the combination of different slip systems and twinning systems combining with the Schmid Factor (SF) analysis and the transmission electron microscope (TEM). The appearance of hardening and softening phenomena can be explained by the Taylor dislocation theory based on TEM analysis. - Highlights: • The phenomena can be characterized by Taylor dislocation model. • The variation of GNDs leads to the phenomena. • The phenomena are proved by micro-hardness, indentation hardness. • The {10-12} twin and {11-24} twin play an important role in the phenomena.

High dislocation density structures and hardening produced by high fluency pulsed-ion-beam implantation

International Nuclear Information System (INIS)

Sharkeev, Yu.P.; Didenko, A.N.; Kozlov, E.V.

1994-01-01

The paper presents a review of experimental data on the ''long-range effect'' (a change in dislocation structure and in physicomechanical properties at distances considerably greater than the ion range value in ion-implanted metallic materials and semiconductors). Our results of electron microscopy studies of high density dislocation structure in ion-implanted metallic materials with different initial states are given. It has been shown that the nature of the dislocation structure and its quantitative characteristics in the implanted metals and alloys depend on the target initial state, the ion type and energy and the retained dose. The data obtained by different workers are in good agreement both with our results and with each other as well as with the results of investigation of macroscopic characteristics (wear resistance and microhardness). It has been established that the ''long-range effect'' occurs in metallic materials with a low yield point or high plasticity level and with little dislocation density in their initial state prior to ion implantation. ((orig.))

Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

Science.gov (United States)

Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

2017-08-01

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

Energy Technology Data Exchange (ETDEWEB)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

2015-07-15

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

Density functional theory studies of screw dislocation core structures in bcc metals

DEFF Research Database (Denmark)

Frederiksen, Søren Lund; Jacobsen, Karsten Wedel

2003-01-01

The core structures of (I 11) screw dislocations in bee metals are studied using density functional theory in the local-density approximation. For Mo and Fe, direct calculations of the core structures show the cores to be symmetric with respect to 180degrees rotations around an axis perpendicular...... to symmetric core structures for all the studied metals....

Dislocation core structures in (0001) InGaN

International Nuclear Information System (INIS)

Rhode, S. L.; Sahonta, S.-L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Horton, M. K.; Haigh, S. J.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2016-01-01

Threading dislocation core structures in c-plane GaN and In x Ga 1−x N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In x Ga 1−x N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In x Ga 1−x N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In x Ga 1−x N, consistent with predictions from atomistic Monte Carlo simulations.

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

International Nuclear Information System (INIS)

Takeuchi, S.; Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

2015-01-01

We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results

Analysis of local dislocation densities in cold-rolled alloy 690 using transmission electron microscopy

International Nuclear Information System (INIS)

Ahn, Tae-Young; Kim, Sung Woo; Hwang, Seong Sik

2016-01-01

Service failure of alloy 690 in NPP has not been reported. However, some research groups reported that primary water stress corrosion cracking (PWSCC) occurred in severely cold-rolled alloy 690. Transgranular craking was also reported in coll-rolled alloy 690 with a banded structure. In order to understand the effect of cold rolling on the cracking of alloy 690, many research groups have focused on the local strain and the cracked carbide induced by cold-rolling, by using electron backscatter diffraction (EBSD). Transmission electron microscopy (TEM) has been widely used to characterize structural materials because this technique has superior spatial resolution and allows for the analysis of crystallographic and chemical information. The aim of the present study is to understand the mechanism of the abnormally high crack growth rate (CGR) in cold-rolled alloy 690 with a banded structure. The local dislocation density was measured by TEM to confirm the effects of local strain on the stress corrosion cracking (SCC) of alloy 690 with a banded structure. The effects of intragranular carbides on the SCC were also evaluated in this study. The local dislocation densities were directly measured using TEM to understand the effect of local strain on the SCC of Ni-based alloy 690 with a banded structure. The dislocation densities in the interior of the grains sharply increased in highly cold-rolled specimens due to intragranular carbide, which acted as a dislocation source

A novel unified dislocation density-based model for hot deformation behavior of a nickel-based superalloy under dynamic recrystallization conditions

International Nuclear Information System (INIS)

Lin, Y.C.; Wen, Dong-Xu; Chen, Xiao-Min; Chen, Ming-Song

2016-01-01

In this study, a novel unified dislocation density-based model is presented for characterizing hot deformation behaviors in a nickel-based superalloy under dynamic recrystallization (DRX) conditions. In the Kocks-Mecking model, a new softening item is proposed to represent the impacts of DRX behavior on dislocation density evolution. The grain size evolution and DRX kinetics are incorporated into the developed model. Material parameters of the developed model are calibrated by a derivative-free method of MATLAB software. Comparisons between experimental and predicted results confirm that the developed unified dislocation density-based model can nicely reproduce hot deformation behavior, DRX kinetics, and grain size evolution in wide scope of initial grain size, strain rate, and deformation temperature. Moreover, the developed unified dislocation density-based model is well employed to analyze the time-variant forming processes of the studied superalloy. (orig.)

A novel unified dislocation density-based model for hot deformation behavior of a nickel-based superalloy under dynamic recrystallization conditions

Energy Technology Data Exchange (ETDEWEB)

Lin, Y.C. [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); Light Alloy Research Institute of Central South University, Changsha (China); State Key Laboratory of High Performance Complex Manufacturing, Changsha (China); Wen, Dong-Xu; Chen, Xiao-Min [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); Chen, Ming-Song [Central South University, School of Mechanical and Electrical Engineering, Changsha (China); State Key Laboratory of High Performance Complex Manufacturing, Changsha (China)

2016-09-15

In this study, a novel unified dislocation density-based model is presented for characterizing hot deformation behaviors in a nickel-based superalloy under dynamic recrystallization (DRX) conditions. In the Kocks-Mecking model, a new softening item is proposed to represent the impacts of DRX behavior on dislocation density evolution. The grain size evolution and DRX kinetics are incorporated into the developed model. Material parameters of the developed model are calibrated by a derivative-free method of MATLAB software. Comparisons between experimental and predicted results confirm that the developed unified dislocation density-based model can nicely reproduce hot deformation behavior, DRX kinetics, and grain size evolution in wide scope of initial grain size, strain rate, and deformation temperature. Moreover, the developed unified dislocation density-based model is well employed to analyze the time-variant forming processes of the studied superalloy. (orig.)

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

Directory of Open Access Journals (Sweden)

Useong Kim

2014-05-01

Full Text Available We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

Dislocation core structures in (0001) InGaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L.; Sahonta, S.-L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Haigh, S. J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2016-03-14

Threading dislocation core structures in c-plane GaN and In{sub x}Ga{sub 1−x}N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In{sub x}Ga{sub 1−x}N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In{sub x}Ga{sub 1−x}N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In{sub x}Ga{sub 1−x}N, consistent with predictions from atomistic Monte Carlo simulations.

Static Recovery Modeling of Dislocation Density in a Cold Rolled Clad Aluminum Alloy

Science.gov (United States)

Penlington, Alex

Clad alloys feature one or more different alloys bonded to the outside of a core alloy, with non-equilibrium, interalloy interfaces. There is limited understanding of the recovery and recrystallization behaviour of cold rolled clad aluminum alloys. In order to optimize the properties of such alloys, new heat treatment processes may be required that differ from what is used for the monolithic alloys. This study examines the recovery behaviour of a cold rolled Novelis Fusion(TM) alloy containing an AA6XXX core with an AA3003 cladding on one side. The bond between alloys appears microscopically discrete and continuous, but has a 30 microm wide chemical gradient. The as-deformed structure at the interalloy region consists of pancaked sub-grains with dislocations at the misorientation boundaries and a lower density organized within the more open interiors. X-ray line broadening was used to extract the dislocation density from the interalloy region and an equivalently deformed AA6XXX following static annealing using a modified Williamson-Hall analysis. This analysis assumed that Gaussian broadening contributions in a pseudo-Voigt function corresponded only to strain from dislocations. The kinetics of the dislocation density evolution to recrystallization were studied isothermally at 2 minute intervals, and isochronally at 175 and 205°C. The data fit the Nes model, in which the interalloy region recovered faster than AA6XXX at 175°C, but was slower at 205°C. This was most likely caused by change in texture and chemistry within this region such as over-aging of AA6XXX . Simulation of a continuous annealing and self homogenization process both with and without pre-recovery indicates a detectable, though small change in the texture and grain size in the interalloy region.

X-Ray and Neutron Diffraction Measurements of Dislocation Density and Subgrain Size in a Friction-Stir-Welded Aluminum Alloy

International Nuclear Information System (INIS)

Woo, Wan Chuck; Ungar, Tomas; Feng, Zhili; Kenik, Edward A.; Clausen, B.

2009-01-01

The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10 14 m -2 and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10 15 m -2 and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kim, Useong; Park, Chulkwon; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Namwook; Yu, Jaejun; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Hyung Joon; Kim, Tai Hoon; Kim, Kee Hoon [Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-05-01

We studied the conduction mechanism in Sb-doped BaSnO{sub 3} epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO{sub 3}. We found that the electron mobility in BaSnO{sub 3} films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO{sub 3} system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO{sub 3} films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

Energy Technology Data Exchange (ETDEWEB)

Mokuno, Yoshiaki, E-mail: mokuno-y@aist.go.jp; Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2014-06-23

A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

Effect of Dislocation Density on Deformation Behavior of Super Strong Bainitic Steel

Directory of Open Access Journals (Sweden)

B. Avishan

2017-02-01

Full Text Available Presence of nanoscale bainitic ferrites and high carbon retained austenites that are stable at ambient temperature within the microstructures of super strong bainitic steels makes it possible to achieve exceptional strengths and ductility properties in these groups of nanostructured steels. This article aims to study the effect of the dislocation density variations during tensile testing in ambient temperature on deformation behavior of nanostructured low temperature bainitic steels. Results indicate that dislocation absorption from bainitic ferrite subunits by surrounding retained austenite reduces the work hardening and therefore increases the formability of bainitic ferrite during deformation, which in turn results in a suitable combination of strength and ductility.

GaN-based blue laser diodes

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Yanashima, Katsunori; Funato, Kenji; Asatsuma, Tsunenori; Kobayashi, Toshimasa [CT Development Centre, CNC, Sony Corporation, Atsugi, Kanagawa (Japan); Tojyo, Tsuyoshi; Asano, Takeharu; Kijima, Satoru; Hino, Tomonori; Takeya, Motonobu; Uchida, Shiro; Ikeda, Masao [Sony Shiroishi Semiconductor Inc., Shiroishi, Miyagi (Japan); Tomiya, Shigetaka [Environment and Analyhsis Technology Department, Sony Corporation, Hodogaya, Yokohama (Japan)

2001-08-13

We report our recent progress on GaN-based high-power laser diodes (LDs), which will be applied as a light source in high-density optical storage systems. We have developed raised-pressure metal-organic chemical vapour deposition (RP-MOCVD), which can reduce the threading-dislocation density in the GaN layer to several times 10{sup 8} cm{sup -2}, and demonstrated continuous-wave (cw) operation of GaN-based LD grown by RP-MOCVD. Furthermore, we found that the epitaxial lateral overgrowth (ELO) technique is useful for further reducing threading-dislocation density to 10{sup 6} cm{sup -2} and reducing the roughness of the cleaved facet. By using this growth technique and optimizing device parameters, the lifetime of LDs was improved to more than 1000 hours under 30 mW cw operation at 60 deg. C. Our results proved that reducing both threading-dislocation density and consumption power is a valid approach to realizing a practical GaN-based LD. On the other hand, the practical GaN-based LD was obtained when threading-dislocation density in ELO-GaN was only reduced to 10{sup 6} cm{sup -2}, which is a relatively small reduction as compared with threading-dislocation density in GaAs- and InP-based LDs. We believe that the multiplication of non-radiative centres is very slow in GaN-based LDs, possibly due to the innate character of the GaN-based semiconductor itself. (author)

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

2011-05-15

Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Microtwins and their effect on accumulation of excess dislocation density in grains with different types of crystal lattice bending in deformed austenitic steel

Energy Technology Data Exchange (ETDEWEB)

Gibert, Ivan, E-mail: gibert1993@mail.ru [National Research Tomsk Polytechnic University, 30, Lenin Ave., 634050, Tomsk (Russian Federation); Kiseleva, Svetlana, E-mail: kisielieva1946@mail.ru; Popova, Natalya, E-mail: natalya-popova-44@mail.ru; Koneva, Nina, E-mail: koneva@tsuab.ru; Kozlov, Eduard, E-mail: kozlov@tsuab.ru [Tomsk State University of Architecture and Building, 2, Solyanaya Sq., 634003, Tomsk (Russian Federation)

2016-01-15

The investigation of excess dislocation density accumulation in the deformed polycrystalline austenitic steel was carried out using transmission electron microscopy (TEM). The distributions of the excess dislocation density in the grains of the deformed austenitic steel with different bending types were obtained and plotted. It was established that in the austenitic polycrystalline steel at the deformation degrees ε = 14 and 25 % the distributions of the excess dislocation density are multimodal. In both cases the grain with compound bending is more stressed. The values of the average excess dislocation density in the grains with the compound and simple bending are less at ε = 25 % than that at ε = 14 %. This is explained by a significant relaxation of the internal stresses in steel with the increase of the deformation degree from 14 % to 25 %. The increase of the number of twinning systems and the material volume fraction covered by twinning leads to the internal stress relaxation and consequently to the increase of the excess dislocation density. The presence of microtwins in the deformed material has an influence on the distribution of the excess dislocation density. In the deformed polycrystalline austenitic steel the number of grains with compound bending is increased with the increase of the plastic deformation degree.

Relaxation plastique d'un film mince par émission de dislocations filantes vis

Science.gov (United States)

Bonnet, Roland; Youssef, Sami; Neily, Salem; Gutakowskii, A. K.

2008-03-01

The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 °C of the Si 0.68Ge 0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60° dislocations oriented . To cite this article: R. Bonnet et al., C. R. Physique 9 (2008).

Fabrication and Characterisation of Flexible Coaxial Thin Thread Supercapacitors

Directory of Open Access Journals (Sweden)

Fulian Qiu

2014-08-01

Full Text Available Flexible coaxial thin thread supercapacitors were fabricated semi-automatically using a dip coating method. A typical coaxial thin thread supercapacitor of a length of 70 cm demonstrated a specific length capacitance of 0.3 mF cm-1 (11.2 mF cm-2 and 2.18 F cm-3 at 5 mV s-1, the device exhibited good electrochemical performance with a high volume energy density of 0.22 mWh cm-3 at a power density of 22 mW cm-3. Thread supercapacitors were assembled in series and parallel combinations, the accepted models for series and parallel circuit combinations were obeyed for two coaxial thread supercapacitors. The thread shows high flexibility and uniformity of specific length capacitance, one integrated with a commercial solar cell could be charged and power a LED. The process is simple, robust and easy to scale up to make unlimited length thread supercapacitors for numerous miniaturized and flexible electronic applications.

Work softening in nanocrystalline materials induced by dislocation annihilation

DEFF Research Database (Denmark)

Ungar, Tamas; Li, Li; Tichy, Geza

2011-01-01

Cold rolling reduces the quantity of dislocation densities in Ni–18% Fe alloys prepared by electrochemical deposition. The dislocation density evolution proposed earlier for the linearly decreasing work-hardening rate during stage III is revisited. The solution of the differential equation predicts...... that when the initial dislocation density is smaller or larger than the saturation value, then the dislocation density will increase or decrease during further plastic deformation. The predictions are verified by experimental values of dislocation densities determined by X-ray line-profile analysis....

Dislocation density and graphitization of diamond crystals

International Nuclear Information System (INIS)

Pantea, C.; Voronin, G.A.; Zerda, T.W.; Gubicza, J.; Ungar, T.

2002-01-01

Two sets of diamond specimens compressed at 2 GPa at temperatures varying between 1060 K and 1760 K were prepared; one in which graphitization was promoted by the presence of water and another in which graphitization of diamond was practically absent. X-ray diffraction peak profiles of both sets were analyzed for the microstructure by using the modified Williamson-Hall method and by fitting the Fourier coefficients of the measured profiles by theoretical functions for crystallite size and lattice strain. The procedures determined mean size and size distribution of crystallites as well as the density and the character of the dislocations. The same experimental conditions resulted in different microstructures for the two sets of samples. They were explained in terms of hydrostatic conditions present in the graphitized samples

Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

International Nuclear Information System (INIS)

Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

2016-01-01

GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer. (paper)

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Fernández-Delgado, N., E-mail: natalia.fernandezdelgado@alum.uca.es [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Herrera, M. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Chisholm, M.F. [Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN (United States); Kamarudin, M.A. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor (Malaysia); Zhuang, Q.D.; Hayne, M. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Molina, S.I. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2017-02-15

Highlights: • GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing. • The density of misfit dislocations in GaSb QDs is reduced after the annealing. • Threading dislocations in GaSb/GaAs QDs are Sb-rich after the thermal annealing. • The gliding of a threading dislocation favors Sb diffusion in GaSb/GaAs QDs. - Abstract: In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template.

Science.gov (United States)

Ben Ammar, H; Minj, A; Chauvat, M-P; Gamarra, P; Lacam, C; Morales, M; Ruterana, P

2017-12-01

Defects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the barrier. Therefore, this work is focused on effects caused by threading dislocations (TDs) and inversion domains (IDs) originating from the underlying GaN. The effects are observed on the crystalline quality of the barrier and characteristic surface morphologies. Each type of TDs is shown to affect the surface morphology in a different way. Depending on the size of the corresponding hillock for a given pinhole, it was possible to determine the dislocation type. It is pointed out that the smallest pinholes are not connected to TDs whereas the large ones terminate either mixed type or edge type TDs. At sufficiently large layer thickness, the IDs originating from the GaN template lead to the formation of concentric trenches at the layer surface, and this is related to the change in growth kinetics on top and at the immediate surroundings of the ID. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

The effect of length scale on the determination of geometrically necessary dislocations via EBSD continuum dislocation microscopy

Energy Technology Data Exchange (ETDEWEB)

Ruggles, T.J., E-mail: timmyruggs@gmail.com [National Institute of Aerospace, 100 Exploration Way, Hampton, VA 23666 (United States); Department of Mechanical Engineering, Brigham Young University, Provo, UT 84602 (United States); Rampton, T.M. [EDAX Inc., 91 McKee Drive, Mahwah, NJ 07430 (United States); Khosravani, A. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Fullwood, D.T. [Department of Mechanical Engineering, Brigham Young University, Provo, UT 84602 (United States)

2016-05-15

Electron backscatter diffraction (EBSD) dislocation microscopy is an important, emerging field in metals characterization. Currently, calculation of geometrically necessary dislocation (GND) density is problematic because it has been shown to depend on the step size of the EBSD scan used to investigate the sample. This paper models the change in calculated GND density as a function of step size statistically. The model provides selection criteria for EBSD step size as well as an estimate of the total dislocation content. Evaluation of a heterogeneously deformed tantalum specimen is used to asses the method. - Highlights: • The GND to SSD transition with increasing step size is analytically modeled. • Dislocation density of a microindented tantalum single crystal is measured. • Guidelines for step size selection in EBSD dislocation microscopy are presented.

GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

Science.gov (United States)

Duan, Xiaoling; Zhang, Jincheng; Xiao, Ming; Zhang, Jinfeng; Hao, Yue

2018-05-01

We demonstrate a GaN growth method using microrod sidewall epitaxial lateral overgrowth (MSELO) on a close-packed microrod template by a nonlithographic technique. The density and distribution of threading dislocations were determined by the density and distribution of microrods and the nucleation model. MSELO exhibited two different nucleation models determined by the direction and degree of substrate misorientation and the sidewall curvature: one-sidewall and three-sidewall nucleation, predicting the dislocation density values. As a result, the threading dislocation density was markedly decreased from 2 × 109 to 5 × 107 cm‑2 with a small coalescence thickness of ∼2 µm for the close-packed 3000 nm microrod sample.

Microscopically derived free energy of dislocations

NARCIS (Netherlands)

Kooiman, M.; Hütter, M.; Geers, M.G.D.

2015-01-01

The dynamics of large amounts of dislocations is the governing mechanism in metal plasticity. The free energy of a continuous dislocation density profile plays a crucial role in the description of the dynamics of dislocations, as free energy derivatives act as the driving forces of dislocation

Interaction of 〈1 0 0〉 dislocation loops with dislocations studied by dislocation dynamics in α-iron

Energy Technology Data Exchange (ETDEWEB)

Shi, X.J.; Dupuy, L. [CEA, DEN, SRMA, F-91191 Gif-sur-Yvette (France); Devincre, B. [Laboratoire d’Etude des Microstructures, CNRS-ONERA, 29 av. de la Division Leclerc, 92322 Châtillon Cedex (France); Terentyev, D. [SCK–CEN, Nuclear Materials Science Institute, Boeretang 200, B-2400 Mol (Belgium); Vincent, L. [CEA, DEN, SRMA, F-91191 Gif-sur-Yvette (France)

2015-05-15

Highlights: • Interactions between edge dislocations and radiation-induced loops were studied by dislocation dynamics. • Dislocation dynamics results are directly compared to molecular dynamics results. • The complex elementary reactions are successfully reproduced. • The critical shear stress to overcome individual loops if reproduced quantitatively. - Abstract: Interstitial dislocation loops with Burgers vector of 〈1 0 0〉 type are formed in α-iron under neutron or heavy ion irradiation. As the density and size of these loops increase with radiation dose and temperature, these defects are thought to play a key role in hardening and subsequent embrittlement of iron-based steels. The aim of the present work is to study the pinning strength of the loops on mobile dislocations. Prior to run massive Dislocation Dynamics (DD) simulations involving experimentally representative array of radiation defects and dislocations, the DD code and its parameterization are validated by comparing the individual loop–dislocation reactions with those obtained from direct atomistic Molecular Dynamics (MD) simulations. Several loop–dislocation reaction mechanisms are successfully reproduced as well as the values of the unpinning stress to detach mobile dislocations from the defects.

Modeling of dislocation dynamics in germanium Czochralski growth

Science.gov (United States)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

Science.gov (United States)

Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

1991-01-01

InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

Defects in degraded GaN-based laser diodes

Energy Technology Data Exchange (ETDEWEB)

Tomiya, Shigetaka [Materials Analysis Center, GPS, Sony Corporation, 2-1-1 Shin-sakuragaoka, Hodogaya, Yokohama, Kanagawa, 240-0036 (Japan); Goto, Shu; Takeya, Motonobu; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan)

2003-11-01

We investigate degraded GaN-based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The dislocation density in the wing region of the ELO is of the order of 10{sup 6}/cm{sup 2} and there are approximately ten threading dislocations in the laser stripe. Neither dislocation multiplication from the threading dislocations nor any structural changes of the threading dislocations were observed in the devices, which were degraded within approximately one hundred hours under 30 mW continuous operation at 25 C. We can, therefore, conclude that degradation in GaN-based LDs is not responsible for the recombination enhanced dislocation motion that is usually observed in zincblende structure-based LDs. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dedicated memory structure holding data for detecting available worker thread(s) and informing available worker thread(s) of task(s) to execute

Energy Technology Data Exchange (ETDEWEB)

Chiu, George L.; Eichenberger, Alexandre E.; O' Brien, John K. P.

2016-12-13

The present disclosure relates generally to a dedicated memory structure (that is, hardware device) holding data for detecting available worker thread(s) and informing available worker thread(s) of task(s) to execute.

A continuum theory of edge dislocations

Science.gov (United States)

Berdichevsky, V. L.

2017-09-01

Continuum theory of dislocation aims to describe the behavior of large ensembles of dislocations. This task is far from completion, and, most likely, does not have a "universal solution", which is applicable to any dislocation ensemble. In this regards it is important to have guiding lines set by benchmark cases, where the transition from a discrete set of dislocations to a continuum description is made rigorously. Two such cases have been considered recently: equilibrium of dislocation walls and screw dislocations in beams. In this paper one more case is studied, equilibrium of a large set of 2D edge dislocations placed randomly in a 2D bounded region. The major characteristic of interest is energy of dislocation ensemble, because it determines the structure of continuum equations. The homogenized energy functional is obtained for the periodic dislocation ensembles with a random contents of the periodic cell. Parameters of the periodic structure can change slowly on distances of order of the size of periodic cells. The energy functional is obtained by the variational-asymptotic method. Equilibrium positions are local minima of energy. It is confirmed the earlier assertion that energy density of the system is the sum of elastic energy of averaged elastic strains and microstructure energy, which is elastic energy of the neutralized dislocation system, i.e. the dislocation system placed in a constant dislocation density field making the averaged dislocation density zero. The computation of energy is reduced to solution of a variational cell problem. This problem is solved analytically. The solution is used to investigate stability of simple dislocation arrays, i.e. arrays with one dislocation in the periodic cell. The relations obtained yield two outcomes: First, there is a state parameter of the system, dislocation polarization; averaged stresses affect only dislocation polarization and cannot change other characteristics of the system. Second, the structure of

Generalized dynamics of moving dislocations in quasicrystals

International Nuclear Information System (INIS)

Agiasofitou, Eleni; Lazar, Markus; Kirchner, Helmut

2010-01-01

A theoretical framework for dislocation dynamics in quasicrystals is provided according to the continuum theory of dislocations. Firstly, we present the fundamental theory for moving dislocations in quasicrystals giving the dislocation density tensors and introducing the dislocation current tensors for the phonon and phason fields, including the Bianchi identities. Next, we give the equations of motion for the incompatible elastodynamics as well as for the incompatible elasto-hydrodynamics of quasicrystals. We continue with the derivation of the balance law of pseudomomentum thereby obtaining the generalized forms of the Eshelby stress tensor, the pseudomomentum vector, the dynamical Peach-Koehler force density and the Cherepanov force density for quasicrystals. The form of the dynamical Peach-Koehler force for a straight dislocation is obtained as well. Moreover, we deduce the balance law of energy that gives rise to the generalized forms of the field intensity vector and the elastic power density of quasicrystals. The above balance laws are produced for both models. The differences between the two models and their consequences are revealed. The influences of the phason fields as well as of the dynamical terms are also discussed.

Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

Science.gov (United States)

Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

2017-06-01

In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

Dislocation Interactions in Olivine Revealed by HR-EBSD

Science.gov (United States)

Wallis, David; Hansen, Lars N.; Britton, T. Ben; Wilkinson, Angus J.

2017-10-01

Interactions between dislocations potentially provide a control on strain rates produced by dislocation motion during creep of rocks at high temperatures. However, it has been difficult to establish the dominant types of interactions and their influence on the rheological properties of creeping rocks due to a lack of suitable observational techniques. We apply high-angular resolution electron backscatter diffraction to map geometrically necessary dislocation (GND) density, elastic strain, and residual stress in experimentally deformed single crystals of olivine. Short-range interactions are revealed by cross correlation of GND density maps. Spatial correlations between dislocation types indicate that noncollinear interactions may impede motion of proximal dislocations at temperatures of 1000°C and 1200°C. Long-range interactions are revealed by autocorrelation of GND density maps. These analyses reveal periodic variations in GND density and sign, with characteristic length scales on the order of 1-10 μm. These structures are spatially associated with variations in elastic strain and residual stress on the order of 10-3 and 100 MPa, respectively. Therefore, short-range interactions generate local accumulations of dislocations, leading to heterogeneous internal stress fields that influence dislocation motion over longer length scales. The impacts of these short- and/or long-range interactions on dislocation velocities may therefore influence the strain rate of the bulk material and are an important consideration for future models of dislocation-mediated deformation mechanisms in olivine. Establishing the types and impacts of dislocation interactions that occur across a range of laboratory and natural deformation conditions will help to establish the reliability of extrapolating laboratory-derived flow laws to real Earth conditions.

Length-scale effect due to periodic variation of geometrically necessary dislocation densities

DEFF Research Database (Denmark)

Oztop, M. S.; Niordson, Christian Frithiof; Kysar, J. W.

2013-01-01

Strain gradient plasticity theories have been successful in predicting qualitative aspects of the length scale effect, most notably the increase in yield strength and hardness as the size of the deforming volume decreases. However new experimental methodologies enabled by recent developments...... of high spatial resolution diffraction methods in a scanning electron microscope give a much more quantitative understanding of plastic deformation at small length scales. Specifically, geometrically necessary dislocation densities (GND) can now be measured and provide detailed information about...... the microstructure of deformed metals in addition to the size effect. Recent GND measurements have revealed a distribution of length scales that evolves within a metal undergoing plastic deformation. Furthermore, these experiments have shown an accumulation of GND densities in cell walls as well as a variation...

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

International Nuclear Information System (INIS)

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-01-01

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO 2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO 2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO 2 /Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0–2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p–i–n nanocolumns were fabricated on SiO 2 /Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO 2 . (paper)

Strained Si engineering for nanoscale MOSFETs

International Nuclear Information System (INIS)

Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

2006-01-01

We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

The Weighted Burgers Vector: a new quantity for constraining dislocation densities and types using electron backscatter diffraction on 2D sections through crystalline materials.

Science.gov (United States)

Wheeler, J; Mariani, E; Piazolo, S; Prior, D J; Trimby, P; Drury, M R

2009-03-01

The Weighted Burgers Vector (WBV) is defined here as the sum, over all types of dislocations, of [(density of intersections of dislocation lines with a map) x (Burgers vector)]. Here we show that it can be calculated, for any crystal system, solely from orientation gradients in a map view, unlike the full dislocation density tensor, which requires gradients in the third dimension. No assumption is made about gradients in the third dimension and they may be non-zero. The only assumption involved is that elastic strains are small so the lattice distortion is entirely due to dislocations. Orientation gradients can be estimated from gridded orientation measurements obtained by EBSD mapping, so the WBV can be calculated as a vector field on an EBSD map. The magnitude of the WBV gives a lower bound on the magnitude of the dislocation density tensor when that magnitude is defined in a coordinate invariant way. The direction of the WBV can constrain the types of Burgers vectors of geometrically necessary dislocations present in the microstructure, most clearly when it is broken down in terms of lattice vectors. The WBV has three advantages over other measures of local lattice distortion: it is a vector and hence carries more information than a scalar quantity, it has an explicit mathematical link to the individual Burgers vectors of dislocations and, since it is derived via tensor calculus, it is not dependent on the map coordinate system. If a sub-grain wall is included in the WBV calculation, the magnitude of the WBV becomes dependent on the step size but its direction still carries information on the Burgers vectors in the wall. The net Burgers vector content of dislocations intersecting an area of a map can be simply calculated by an integration round the edge of that area, a method which is fast and complements point-by-point WBV calculations.

Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

Science.gov (United States)

Tavakoli, Mohammad Hossein; Renani, Elahe Kabiri; Honarmandnia, Mohtaram; Ezheiyan, Mahdi

2018-02-01

In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

Simultaneous Middle Third Clavicle Fracture and Type 3 Acromioclavicular Joint Dislocation; A Case Report

Science.gov (United States)

Solooki, Saeed; Azad, Ali

2014-01-01

Simultaneous middle third clavicle fracture and acromioclavicular joint dislocation is a rare combination injury, as a result of high-energy trauma. We report a patient with a middle third clavicle fracture and ipsilateral grade three-acromioclavicular joint dislocation, which is a rare combination. The patient wanted to get back to work as soon as possible, so the fracture was fixed with reconstruction plate after open reduction and plate contouring; and acromioclavicular joint dislocation was reduced and fixed with two full threaded cancellous screws. One screw was inserted through the plate to the coracoid process. Clinical and radiographic finding revealed complete union of clavicle fracture and anatomical reduction of acromioclavicular joint with pain free full joint range of motion one year after operation. PMID:25207318

A unified dislocation density-dependent physical-based constitutive model for cold metal forming

Science.gov (United States)

Schacht, K.; Motaman, A. H.; Prahl, U.; Bleck, W.

2017-10-01

Dislocation-density-dependent physical-based constitutive models of metal plasticity while are computationally efficient and history-dependent, can accurately account for varying process parameters such as strain, strain rate and temperature; different loading modes such as continuous deformation, creep and relaxation; microscopic metallurgical processes; and varying chemical composition within an alloy family. Since these models are founded on essential phenomena dominating the deformation, they have a larger range of usability and validity. Also, they are suitable for manufacturing chain simulations since they can efficiently compute the cumulative effect of the various manufacturing processes by following the material state through the entire manufacturing chain and also interpass periods and give a realistic prediction of the material behavior and final product properties. In the physical-based constitutive model of cold metal plasticity introduced in this study, physical processes influencing cold and warm plastic deformation in polycrystalline metals are described using physical/metallurgical internal variables such as dislocation density and effective grain size. The evolution of these internal variables are calculated using adequate equations that describe the physical processes dominating the material behavior during cold plastic deformation. For validation, the model is numerically implemented in general implicit isotropic elasto-viscoplasticity algorithm as a user-defined material subroutine (UMAT) in ABAQUS/Standard and used for finite element simulation of upsetting tests and a complete cold forging cycle of case hardenable MnCr steel family.

Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN

CERN Document Server

Jones, R; Gutiérrez-Sosa, A; Bangert, U; Heggie, M I; Blumenau, A T; Frauenheim, T; Briddon, P R

2002-01-01

First-principles calculations of electron energy loss (EEL) spectra for bulk GaN and diamond are compared with experimental spectra acquired with a scanning tunnelling electron microscope offering ultra-high-energy resolution in low-loss energy spectroscopy. The theoretical bulk low-loss EEL spectra, in the E sub g to 10 eV range, are in good agreement with experimental data. Spatially resolved spectra from dislocated regions in both materials are distinct from bulk spectra. The main effects are, however, confined to energy losses lying above the band edge. The calculated spectra for low-energy dislocations in diamond are consistent with the experimental observations, but difficulties remain in understanding the spectra of threading dislocations in GaN.

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Science.gov (United States)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Gold thread implantation promotes hair growth in human and mice

Science.gov (United States)

Kim, Jong-Hwan; Cho, Eun-Young; Kwon, Euna; Kim, Woo-Ho; Park, Jin-Sung; Lee, Yong-Soon

2017-01-01

Thread-embedding therapy has been widely applied for cosmetic purposes such as wrinkle reduction and skin tightening. Particularly, gold thread was reported to support connective tissue regeneration, but, its role in hair biology remains largely unknown due to lack of investigation. When we implanted gold thread and Happy Lift™ in human patient for facial lifting, we unexpectedly found an increase of hair regrowth in spite of no use of hair growth medications. When embedded into the depilated dorsal skin of mice, gold thread or polyglycolic acid (PGA) thread, similarly to 5% minoxidil, significantly increased the number of hair follicles on day 14 after implantation. And, hair re-growth promotion in the gold threadimplanted mice were significantly higher than that in PGA thread group on day 11 after depilation. In particular, the skin tissue of gold thread-implanted mice showed stronger PCNA staining and higher collagen density compared with control mice. These results indicate that gold thread implantation can be an effective way to promote hair re-growth although further confirmatory study is needed for more information on therapeutic mechanisms and long-term safety. PMID:29399026

Simultaneous of Mid Third Clavicle Fracture and Type 3 Acromioclavicular Joint Dislocation; A Case Report

Directory of Open Access Journals (Sweden)

Saeed Solooki

2014-03-01

Full Text Available Simultaneous mid third clavicle fracture and acromioclavicular joint dislocation is a rare combination injury, as a result of high-energy trauma. We report a patient with a middle third clavicle fracture and ipsilateral grade three-acromioclavicular joint dislocation, which is a rare combination. The patient wanted to get back to work as soon as possible, so the fracture was fixed with reconstruction plate after open reduction and plate contouring; and acromioclavicular joint dislocation was reduced and fixed with two full threaded cancellous screws. One screw was inserted through the plate to the coracoid process. Clinical and radiographic finding revealed complete union of clavicle fracture and anatomical reduction of acromioclavicular joint with pain free full joint range of motion one year after operation.

Simultaneous of Mid Third Clavicle Fracture and Type 3 Acromioclavicular Joint Dislocation; A Case Report

Directory of Open Access Journals (Sweden)

Saeed Solooki

2014-03-01

Full Text Available   Simultaneous mid third clavicle fracture and acromioclavicular joint dislocation is a rare combination injury, as a result of high-energy trauma. We report a patient with a middle third clavicle fracture and ipsilateral grade three-acromioclavicular joint dislocation, which is a rare combination. The patient wanted to get back to work as soon as possible, so the fracture was fixed with reconstruction plate after open reduction and plate contouring; and acromioclavicular joint dislocation was reduced and fixed with two full threaded cancellous screws. One screw was inserted through the plate to the coracoid process. Clinical and radiographic finding revealed complete union of clavicle fracture and anatomical reduction of acromioclavicular joint with pain free full joint range of motion one year after operation.

Modeling of dislocation generation and interaction during high-speed deformation of metals

DEFF Research Database (Denmark)

Schiøtz, J.; Leffers, T.; Singh, B.N.

2002-01-01

Recent experiments by Kiritani et al. [1] have revealed a surprisingly high rate of vacancy production during highspeed deformation of thin foils of fcc metals. Virtually no dislocations are seen after the deformation. This is interpreted as evidence for a dislocation-free deformation mechanism...... at very high strain rates. We have used molecular-dynamics simulations to investigate high-speed deformation of copper crystals. Even though no pre-existing dislocation sources are present in the initial system, dislocations are quickly nucleated and a very high dislocation density is reached during...... the deformation. Due to the high density of dislocations, many inelastic interactions occur between dislocations, resulting in the generation of vacancies. After the deformation, a very high density of vacancies is observed, in agreement with the experimental observations. The processes responsible...

Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

Science.gov (United States)

Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

2018-04-01

90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

Dislocation dynamics of web type silicon ribbon

Energy Technology Data Exchange (ETDEWEB)

Dillon, Jr, O W; Tsai, C T; DeAngelis, R J

1987-03-01

Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which produce changes in the dislocation density in the ribbon. A viscoplastic material response function (Haasen-Sumino model) is used herein to calculate the stresses and the dislocation density at each point in the silicon ribbon. The residual stresses are also calculated.

Riemann–Cartan Geometry of Nonlinear Dislocation Mechanics

KAUST Repository

Yavari, Arash; Goriely, Alain

2012-01-01

but vanishing non-metricity. Torsion of the material manifold is identified with the dislocation density tensor of nonlinear dislocation mechanics. Using Cartan's moving frames we construct the material manifold for several examples of bodies with distributed

Dislocation structure and cold resistance of low-carbon steel

International Nuclear Information System (INIS)

Gul', Yu.P.; Karnaukh, A.I.

1975-01-01

In the formation of the dislocation structure of a small (10%) deformation, the determining effect on the cold brittleness temperature is exerted by the degree of uniformity in the distribution of dislocations and microvolumes. The overall density of the dislocations is of secondary importance here. By pretreatment to achieve more uniform distribution and dispersion of particles of the excess phase, the degree of uniformity of dislocation distribution in microvolumes can be increased, the cold brittleness temperature lowered and the effect of various deformation patterns on resistance to cold counterbalanced. The formation of a cell-type dislocation structure in the case of a nonuniform distribution of relatively large particles of the excess phase and in that of a large overall density of dislocations does not result in low brittleness temperatures. The formation of a cell-type dislocation structure in the case of uniform distribution of particles of the excess phase and of a comparatively small overall density of dislocations is accompanied by a very pronounced decrease in cold brittleness temperature not only by comparison with other types of dislocation structure but also with the normalized state. At the same time the formation of this kind of a cell structure leads to a substantial (factor of 2-5) increase in resistance to plastic deformation. The prerequisites for obtaining an optimum dislocation are fulfilled either by a combination of hardening from the austenitic region and prompt, small-scale (5%) deformation, or by a combination of accelerated cooling from the austenitic region, 30-40% deformation and high yield. The size of the dislocation cells observed under the electron microscope does not exhibit - within the limits investigated - any direct effect on the cold brittleness temperature. (author)

Probabilistic thread algebra

NARCIS (Netherlands)

Bergstra, J.A.; Middelburg, C.A.

2015-01-01

We add probabilistic features to basic thread algebra and its extensions with thread-service interaction and strategic interleaving. Here, threads represent the behaviours produced by instruction sequences under execution and services represent the behaviours exhibited by the components of execution

Determination of the extinction factor in function of the density of dislocations; Determinacion del factor de extincion en funcion de la densidad de dislocaciones

Energy Technology Data Exchange (ETDEWEB)

Macias B, L.R

1991-12-15

There are exist three basic types of crystalline lattice defects: point, line (or dislocations) and surface defects. Such defects may be incorporated intentionally to produce desired mechanical and physical properties. This report presents a FORTRAN language program to calculate the extinction factor in samples of polycrystalline copper as function of the dislocations density. (Author)

Asymptotic analysis of a pile-up of regular edge dislocation walls

KAUST Repository

Hall, Cameron L.

2011-12-01

The idealised problem of a pile-up of regular dislocation walls (that is, of planes each containing an infinite number of parallel, identical and equally spaced dislocations) was presented by Roy et al. [A. Roy, R.H.J. Peerlings, M.G.D. Geers, Y. Kasyanyuk, Materials Science and Engineering A 486 (2008) 653-661] as a prototype for understanding the importance of discrete dislocation interactions in dislocation-based plasticity models. They noted that analytic solutions for the dislocation wall density are available for a pile-up of regular screw dislocation walls, but that numerical methods seem to be necessary for investigating regular edge dislocation walls. In this paper, we use the techniques of discrete-to-continuum asymptotic analysis to obtain a detailed description of a pile-up of regular edge dislocation walls. To leading order, we find that the dislocation wall density is governed by a simple differential equation and that boundary layers are present at both ends of the pile-up. © 2011 Elsevier B.V.

Asymptotic analysis of a pile-up of regular edge dislocation walls

KAUST Repository

Hall, Cameron L.

2011-01-01

The idealised problem of a pile-up of regular dislocation walls (that is, of planes each containing an infinite number of parallel, identical and equally spaced dislocations) was presented by Roy et al. [A. Roy, R.H.J. Peerlings, M.G.D. Geers, Y. Kasyanyuk, Materials Science and Engineering A 486 (2008) 653-661] as a prototype for understanding the importance of discrete dislocation interactions in dislocation-based plasticity models. They noted that analytic solutions for the dislocation wall density are available for a pile-up of regular screw dislocation walls, but that numerical methods seem to be necessary for investigating regular edge dislocation walls. In this paper, we use the techniques of discrete-to-continuum asymptotic analysis to obtain a detailed description of a pile-up of regular edge dislocation walls. To leading order, we find that the dislocation wall density is governed by a simple differential equation and that boundary layers are present at both ends of the pile-up. © 2011 Elsevier B.V.

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Energy Technology Data Exchange (ETDEWEB)

Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

2005-05-01

Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dislocation pinning effects induced by nano-precipitates during warm laser shock peening: Dislocation dynamic simulation and experiments

Science.gov (United States)

Liao, Yiliang; Ye, Chang; Gao, Huang; Kim, Bong-Joong; Suslov, Sergey; Stach, Eric A.; Cheng, Gary J.

2011-07-01

Warm laser shock peening (WLSP) is a new high strain rate surface strengthening process that has been demonstrated to significantly improve the fatigue performance of metallic components. This improvement is mainly due to the interaction of dislocations with highly dense nanoscale precipitates, which are generated by dynamic precipitation during the WLSP process. In this paper, the dislocation pinning effects induced by the nanoscale precipitates during WLSP are systematically studied. Aluminum alloy 6061 and AISI 4140 steel are selected as the materials with which to conduct WLSP experiments. Multiscale discrete dislocation dynamics (MDDD) simulation is conducted in order to investigate the interaction of dislocations and precipitates during the shock wave propagation. The evolution of dislocation structures during the shock wave propagation is studied. The dislocation structures after WLSP are characterized via transmission electron microscopy and are compared with the results of the MDDD simulation. The results show that nano-precipitates facilitate the generation of highly dense and uniformly distributed dislocation structures. The dislocation pinning effect is strongly affected by the density, size, and space distribution of nano-precipitates.

Modeling of dislocation channel width evolution in irradiated metals

Science.gov (United States)

Doyle, Peter J.; Benensky, Kelsa M.; Zinkle, Steven J.

2018-02-01

Defect-free dislocation channel formation has been reported to promote plastic instability during tensile testing via localized plastic flow, leading to a distinct loss of ductility and strain hardening in many low-temperature irradiated materials. In order to study the underlying mechanisms governing dislocation channel width and formation, the channel formation process is modeled via a simple stochastic dislocation-jog process dependent upon grain size, defect cluster density, and defect size. Dislocations traverse a field of defect clusters and jog stochastically upon defect interaction, forming channels of low defect-density. Based upon prior molecular dynamics (MD) simulations and in-situ experimental transmission electron microscopy (TEM) observations, each dislocation encounter with a dislocation loop or stacking fault tetrahedron (SFT) is assumed to cause complete absorption of the defect cluster, prompting the dislocation to jog up or down by a distance equal to half the defect cluster diameter. Channels are predicted to form rapidly and are comparable to reported TEM measurements for many materials. Predicted channel widths are found to be most strongly dependent on mean defect size and correlated well with a power law dependence on defect diameter and density, and distance from the dislocation source. Due to the dependence of modeled channel width on defect diameter and density, maximum channel width is predicted to slowly increase as accumulated dose increases. The relatively weak predicted dependence of channel formation width with distance, in accordance with a diffusion analogy, implies that after only a few microns from the source, most channels observed via TEM analyses may not appear to vary with distance because of limitations in the field-of-view to a few microns. Further, examinations of the effect of the so-called "source-broadening" mechanism of channel formation showed that its effect is simply to add a minimum thickness to the channel

Dislocation Starvation and Exhaustion Hardening in Mo-alloy Nanofibers

Energy Technology Data Exchange (ETDEWEB)

Chisholm, Claire [University of California, Berkeley & LBNL; Bei, Hongbin [ORNL; Lowry, M. B. [University of California, Berkeley; Oh, Jason [Hysitron, Inc., MN; Asif, S.A. Syed [Hysitron, Inc., MN; Warren, O. [Hysitron, Inc., MN; Shan, Zhiwei [Xi' an Jiaotong University, China & Hysitron, Inc., MN; George, Easo P [ORNL; Minor, Andrew [University of California, Berkeley & LBNL

2012-01-01

The evolution of defects in Mo alloy nanofibers with initial dislocation densities ranging from 0 to 1.6 1014 m2 were studied using an in situ push-to-pull device in conjunction with a nanoindenter in a transmission electron microscope. Digital image correlation was used to determine stress and strain in local areas of deformation. When they had no initial dislocations the Mo alloy nanofibers suffered sudden catastrophic elongation following elastic deformation to ultrahigh stresses. At the other extreme fibers with a high dislocation density underwent sustained homogeneous deformation after yielding at much lower stresses. Between these two extremes nanofibers with intermediate dislocation densities demonstrated a clear exhaustion hardening behavior, where the progressive exhaustion of dislocations and dislocation sources increases the stress required to drive plasticity. This is consistent with the idea that mechanical size effects ( smaller is stronger ) are due to the fact that nanostructures usually have fewer defects that can operate at lower stresses. By monitoring the evolution of stress locally we find that exhaustion hardening causes the stress in the nanofibers to surpass the critical stress predicted for self-multiplication, supporting a plasticity mechanism that has been hypothesized to account for the rapid strain softening observed in nanoscale bcc materials at high stresses.

Dislocation evolution and properties enhancement of GH2036 by laser shock processing: Dislocation dynamics simulation and experiment

Energy Technology Data Exchange (ETDEWEB)

Ren, X.D., E-mail: renxd@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, W.F.; Ren, Y.P.; Xu, S.D.; Liu, F.F. [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yuan, S.Q. [Research Center of Fluid Machinery Engineering and Technical, Jiangsu University, Zhenjiang 212013 (China); Ren, N.F.; Huang, J.J. [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)

2016-01-27

This paper systematically investigated the effect of laser shock processing (LSP) on dislocation evolution and microstructure configuration of GH2036 alloy. Surface topography and roughness were tested by Axio CSM 700 microscope. The dislocation configurations were characterized by transmission electron microscope (TEM) and simulated by multi-scale discrete dislocation dynamics (DD) method. The results have confirmed that LSP had a beneficial effect on micro-hardness, which could be increased by 16%, and the surface topography exhibited excellent stability even after thermal cycle. The dislocation density and stress–strain response have strong dependence on laser power intensity. Reasonable agreement between DD simulation and experiments is achieved. The results showed that complex random microstructures can be observed in the shocked surface. The grain refinement mechanism of LSP GH2036 involves dislocation segmentation and twin intersections.

Riemann–Cartan Geometry of Nonlinear Dislocation Mechanics

KAUST Repository

Yavari, Arash

2012-03-09

We present a geometric theory of nonlinear solids with distributed dislocations. In this theory the material manifold-where the body is stress free-is a Weitzenböck manifold, that is, a manifold with a flat affine connection with torsion but vanishing non-metricity. Torsion of the material manifold is identified with the dislocation density tensor of nonlinear dislocation mechanics. Using Cartan\\'s moving frames we construct the material manifold for several examples of bodies with distributed dislocations. We also present non-trivial examples of zero-stress dislocation distributions. More importantly, in this geometric framework we are able to calculate the residual stress fields, assuming that the nonlinear elastic body is incompressible. We derive the governing equations of nonlinear dislocation mechanics covariantly using balance of energy and its covariance. © 2012 Springer-Verlag.

Modelling the Effect of Weave Structure and Fabric Thread Density on Mechanical and Comfort Properties of Woven Fabrics

Directory of Open Access Journals (Sweden)

Maqsood Muhammad

2016-09-01

Full Text Available The paper investigates the effects of weave structure and fabric thread density on the comfort and mechanical properties of various test fabrics woven from polyester/cotton yarns. Three different weave structures, that is, 1/1 plain, 2/1 twill and 3/1 twill, and three different fabric densities were taken as input variables whereas air permeability, overall moisture management capacity, tensile strength and tear strength of fabrics were taken as response variables and a comparison is made of the effect of weave structure and fabric density on the response variables. The results of fabric samples were analysed in Minitab statistical software. The coefficients of determinations (R-sq values of the regression equations show a good predictive ability of the developed statistical models. The findings of the study may be helpful in deciding appropriate manufacturing specifications of woven fabrics to attain specific comfort and mechanical properties.

Dislocation-related trap levels in nitride-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-05-26

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

Dislocation-related trap levels in nitride-based light emitting diodes

International Nuclear Information System (INIS)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna; Meneghini, Matteo; Zanoni, Enrico; Zhu, Dandan; Humphreys, Colin

2014-01-01

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10 9 cm −2 and a low dislocation density of 3 × 10 8 cm −2 . Three trapping levels for electrons were revealed, named A, A1, and B, with energies E A  ≈ 0.04 eV, E A1  ≈ 0.13 eV, and E B  ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

On verification of a theory in dislocation plasticity

International Nuclear Information System (INIS)

Ng, D.H.Y.; Lee, L.H.N.

1981-01-01

In the past twenty years, many attempts to unify the theories of macroplasticity and microplasticity in polycrystalline materials have been made. Several major approaches have been suggested namely: the geometrical approach, the analytical approach, the phenomenological approach and the internal variables approach. To verify the plasticity theory based on any one of the above models, detail experimental data including microstructural quantities such as dislocation density, dislocation speed, etc. are required. Unfortunately, there were some difficulties in evaluating dislocation speed and dealing with the term 'mobile fraction' of dislocation density. Therefore, an experimental verification of such plasticity theory has not been made. A dislocation velocity equation based on a thermally activated model is used. A set of plastic strain rate equations for polycrystalline materials formulated by analyzing dislocation dynamics in a statistical approach are presented. In order to evaluate the activation free energy, Gibbs' modified tetragonal distortion model is used together with some measurements obtained from electron micrographs. Experimental results on the dynamic yielding and fracture of 6061-T6 aluminum alloy tubings under biaxial loadings obtained by Ng, Delich and Lee are used. In dealing with 'mobile fraction', Gilman's suggestion is adopted. (orig./HP)

Characterizing short-range vs. long-range spatial correlations in dislocation distributions

International Nuclear Information System (INIS)

Chevy, Juliette; Fressengeas, Claude; Lebyodkin, Mikhail; Taupin, Vincent; Bastie, Pierre; Duval, Paul

2010-01-01

Hard X-ray diffraction experiments have provided evidence of a strongly heterogeneous distribution of dislocation densities along the axis of cylindrical ice single crystals oriented for basal slip in torsion creep. The dislocation arrangements showed a complex scale-invariant character, which was analyzed by means of statistical and multifractal techniques. A trend to decreasing autocorrelation of the dislocation distribution was observed as deformation proceeds. At low strain levels, long-range spatial correlations control the distribution, but short-range correlations in relation with cross-slip progressively prevail when strain increases. This trend was reproduced by a model based on field dislocation dynamics, a theory accounting for both long-range elastic interactions and short-range interactions through transport of dislocation densities.

Characterizing short-range vs. long-range spatial correlations in dislocation distributions

Energy Technology Data Exchange (ETDEWEB)

Chevy, Juliette, E-mail: juliette.chevy@gmail.com [Laboratoire de Glaciologie et Geophysique de l' Environnement-CNRS, 54 rue Moliere, 38402 St. Martin d' Heres (France)] [Laboratoire Science et Ingenierie des Materiaux et Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 St. Martin d' Heres Cedex (France); Fressengeas, Claude; Lebyodkin, Mikhail; Taupin, Vincent [Laboratoire de Physique et Mecanique des Materiaux, Universite Paul Verlaine-Metz/CNRS, Ile du Saulcy, 57045 Metz Cedex (France); Bastie, Pierre [Laboratoire de Spectrometrie Physique, BP 87, 38402 St. Martin d' Heres Cedex (France)] [Institut Laue Langevin, BP 156, 38042 Grenoble Cedex 9 (France); Duval, Paul [Laboratoire de Glaciologie et Geophysique de l' Environnement-CNRS, 54 rue Moliere, 38402 St. Martin d' Heres (France)

2010-03-15

Hard X-ray diffraction experiments have provided evidence of a strongly heterogeneous distribution of dislocation densities along the axis of cylindrical ice single crystals oriented for basal slip in torsion creep. The dislocation arrangements showed a complex scale-invariant character, which was analyzed by means of statistical and multifractal techniques. A trend to decreasing autocorrelation of the dislocation distribution was observed as deformation proceeds. At low strain levels, long-range spatial correlations control the distribution, but short-range correlations in relation with cross-slip progressively prevail when strain increases. This trend was reproduced by a model based on field dislocation dynamics, a theory accounting for both long-range elastic interactions and short-range interactions through transport of dislocation densities.

Influence of mobile dislocations on phase separation in binary alloys

International Nuclear Information System (INIS)

Haataja, Mikko; Leonard, Francois

2004-01-01

We introduce a continuum model to describe the phase separation of a binary alloy in the presence of mobile dislocations. The kinetics of the local composition and dislocation density are coupled through their elastic fields. We show both analytically and numerically that mobile dislocations modify the standard spinodal decomposition process, and lead to several regimes of growth. Depending on the dislocation mobility and observation time, the phase separation may be accelerated, decelerated, or unaffected by mobile dislocations. For any finite dislocation mobility, we show that the domain growth rate asymptotically becomes independent of the dislocation mobility, and is faster than the dislocation-free growth rate

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Daniltsev, V. M.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-11-15

Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

Computational issues in the simulation of two-dimensional discrete dislocation mechanics

Science.gov (United States)

Segurado, J.; LLorca, J.; Romero, I.

2007-06-01

The effect of the integration time step and the introduction of a cut-off velocity for the dislocation motion was analysed in discrete dislocation dynamics (DD) simulations of a single crystal microbeam. Two loading modes, bending and uniaxial tension, were examined. It was found that a longer integration time step led to a progressive increment of the oscillations in the numerical solution, which would eventually diverge. This problem could be corrected in the simulations carried out in bending by introducing a cut-off velocity for the dislocation motion. This strategy (long integration times and a cut-off velocity for the dislocation motion) did not recover, however, the solution computed with very short time steps in uniaxial tension: the dislocation density was overestimated and the dislocation patterns modified. The different response to the same numerical algorithm was explained in terms of the nature of the dislocations generated in each case: geometrically necessary in bending and statistically stored in tension. The evolution of the dislocation density in the former was controlled by the plastic curvature of the beam and was independent of the details of the simulations. On the contrary, the steady-state dislocation density in tension was determined by the balance between nucleation of dislocations and those which are annihilated or which exit the beam. Changes in the DD imposed by the cut-off velocity altered this equilibrium and the solution. These results point to the need for detailed analyses of the accuracy and stability of the dislocation dynamic simulations to ensure that the results obtained are not fundamentally affected by the numerical strategies used to solve this complex problem.

Microstructure of laterally overgrown GaN layers

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Cherns, David

2001-01-01

Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed light on the optical properties of such samples. [copyright] 2001 American Institute of Physics

Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

International Nuclear Information System (INIS)

Morse, M.; Wu, P.; Choi, S.; Kim, T.H.; Brown, A.S.; Losurdo, M.; Bruno, G.

2006-01-01

We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy

Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

Energy Technology Data Exchange (ETDEWEB)

Morse, M. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States) and Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States)]. E-mail: michael.morse@duke.edu; Wu, P. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Choi, S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Kim, T.H. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Brown, A.S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States) and Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States)]. E-mail: abrown@ee.duke.edu; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona, 4-70126 Bari (Italy)

2006-10-31

We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy.

Determining dislocation densities from the extinction effect (review)

International Nuclear Information System (INIS)

Ivanov, A.N.; Polyakov, A.M.; Skakov, Yu.A.

1987-01-01

Much attention is being given to dynamic x-ray scattering in crystals containing defects. As general diffraction theory for crystals with defects does not at present extend beyond formal expressions and there is no rigorous theory of diffraction by crystals containing dislocations, one describes extinction in a nonideal crystal via phenomenological theories. In this paper, the authors review the various methods of analyzing the dislocation structure from the integral intensities which are based on three extinction models: Darwin's extinction theory; mosaic-crystal scattering theory; and the transport equations method proposed by Stephan for Bragg geometry and Laue geometry. The most rigorous method in a theoretical respect of those covered in this review is based on Kato's extinction theory. The authors consider it necessary to devise a general theory of x-ray scattering for crystals with any type of long-range order in the displacement pattern, although this paper has dealt with some of the applications of quantum mechanics and statistical physics in describing diffraction

Dislocation dynamics in Al-Li alloys: mean jump distance and activation length of moving dislocations

International Nuclear Information System (INIS)

De Hosson, J.Th.M.; Huis Int Veld, A.

1984-01-01

It is pointed out that aluminum-lithium based alloys offer considerable promise for structural applications, especially in the aerospace industry. This promise is related to the potential for high strength in combination with a density which is lower than that found in conventional aluminum alloys. In addition, the modulus of elasticity is higher than corresponding values in conventional aluminum alloys. A nuclear magnetic resonance study of the mechanism of dislocation motion in Al-2.2 wt pct Li is reported. Information about the effective mean jump distance of mobile dislocations is provided by in situ nuclear spin relaxation measurements. The activation length of mobile dislocations has been obtained from strain-rate change experiments on Al-2.2 wt pct Li. The considered study shows that pulsed nuclear magnetic resonance is a complementary new technique for the study of moving dislocations in Al-Li alloys. 28 references

Dislocation Structures in Creep-deformed Polycrystalline MgO

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen

1972-01-01

dislocation segments lie in their slip or climb planes. On the basis of this structure, a model is proposed in which glide is the principal cause of deformation but the rate-limiting process, i.e. annealing of the network, is diffusion-controlled. Theoretical estimates and experimental results agree within 1...... energy of 76 ± 12 kcal/mol. The creep rate is independent of grain size. The dislocation structure was investigated by transmission electron microscopy. The total dislocation density follows the relation, σ=bG√ρ, commonly found for metals. The dislocations form a 3-dimensional network in which many...

Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

Energy Technology Data Exchange (ETDEWEB)

Gocalinska, Agnieszka, E-mail: agnieszka.gocalinska@tyndall.ie; Manganaro, Marina; Dimastrodonato, Valeria; Pelucchi, Emanuele

2015-09-15

Highlights: • Metamorphic buffer layers of In{sub x}Ga{sub 1−x}As were grown by MOVPE and characterised by AFM and TEM. • It was found that AFM provides sufficient information to estimate threading defect density in metamorphic structures, even when significant roughness is present. • When planar-view TEM is lacking, a combination of cross-sectional TEM and large scale AFM can provide good evaluation of the material quality. • It is fast, cheap and non-destructive – can be very useful in development process of complicated structures, requiring multiple test growths and characterisation. - Abstract: We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10{sup 6}) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

Gradients of geometrically necessary dislocations from white beam microdiffraction

International Nuclear Information System (INIS)

Barabash, R.I.; Ice, G.E.; Pang, J.W.L.

2005-01-01

Variations in the local crystallographic orientation due to the presence of geometrically necessary dislocations and dislocation boundaries smear the distribution of intensity near Laue reflections. Here, some simple model distributions of geometrically necessary dislocations, GNDs, are used to estimate the dislocation tensor field from the intensity distribution of Laue peaks. Streaking of the Laue spots is found to be quantitatively and qualitatively distinct depending on the ratio between the absorption coefficient and the GND density gradient. In addition, different slip systems cause distinctly different Laue-pattern streaking. Experimental Laue patterns are therefore sensitive to stored dislocations and GNDs. As an example, white beam microdiffraction was applied to characterize the dislocation arrangement in a deformed polycrystalline Ni grain during in situ uniaxial tension

The peculiar effect of forest dislocations on single twin layer development in zinc and beryllium single crystals

International Nuclear Information System (INIS)

Lavrentev, F.F.; Bosin, M.E.

1978-01-01

This is an investigation of the effect of different types of forest dislocation on the rate of twin layer broadening, Vsub(n), in zinc and beryllium crystals, and on the velocity of the twinning dislocation movement, Vsub(t), in zinc crystals under the action of a constant external shear stress. Increasing the forest basal dislocation density, rhosub(b), was found to result in increasing Vsub(n) and reducing Vsub(t), while increasing the forest pyramidal dislocation density, rhosub(p), causes Vsub(n) to decrease. An analysis in terms of crystal geometry shows that the dualism of the influence of the basal dislocations stems from the fact that they behave as twinning dislocation sources whose density, increasing with rhosub(b) leads to higher Vsub(n). The decrease in the effective stress, tausup(*), with increasing rhosub(b) is estimated. An analysis of the experimental data yielded the relation Vsub(t)(tausup(*)) and an estimate of the activation volume, which amounted to 6 x 10 -21 cm 3 . The close coincidence of the activation volumes as obtained from Vsub(t)(tausup(*)) and Vsub(n)(tau) suggests that the rate-controlling mechanism of the twin layer development in zinc crystals with large forest basal dislocation density is the twinning dislocation inhibition. In Be crystals, the increasing Vsub(n) effect is observed during untwinning. In Be twinned crystals, electron microscopy revealed twinning dislocations with a density of about 10 5 cm -1 at the twin boundaries and a large forest basal dislocation density inside the twin (ca. 10 8 cm -2 ). (Auth.)

Direct determination of elastic strains and dislocation densities in individual subgrains in deformation structures

DEFF Research Database (Denmark)

Jakobsen, Bo; Poulsen, Henning Friis; Lienert, U.

2007-01-01

A novel synchrotron-based technique "high angular resolution 3DXRD" is presented in detail, and applied to the characterization of oxygen-free, high-conductivity copper at a tensile deformation of 2%. The position and shape in reciprocal space of 14 peaks originating from deeply embedded individual...... subgrains is reported. From this dataset the density of redundant dislocations in the individual subgrains is inferred to be below 12 × 1012 m-2 on average. It is found that the subgrains on average experience a reduction in strain of 0.9 × 10-4 with respect to the mean elastic strain of the full grain...

Statistics of dislocation pinning at localized obstacles

Energy Technology Data Exchange (ETDEWEB)

Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

2014-10-14

Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

Cribellate thread production in spiders: Complex processing of nano-fibres into a functional capture thread.

Science.gov (United States)

Joel, Anna-Christin; Kappel, Peter; Adamova, Hana; Baumgartner, Werner; Scholz, Ingo

2015-11-01

Spider silk production has been studied intensively in the last years. However, capture threads of cribellate spiders employ an until now often unnoticed alternative of thread production. This thread in general is highly interesting, as it not only involves a controlled arrangement of three types of threads with one being nano-scale fibres (cribellate fibres), but also a special comb-like structure on the metatarsus of the fourth leg (calamistrum) for its production. We found the cribellate fibres organized as a mat, enclosing two parallel larger fibres (axial fibres) and forming the typical puffy structure of cribellate threads. Mat and axial fibres are punctiform connected to each other between two puffs, presumably by the action of the median spinnerets. However, this connection alone does not lead to the typical puffy shape of a cribellate thread. Removing the calamistrum, we found a functional capture thread still being produced, but the puffy shape of the thread was lost. Therefore, the calamistrum is not necessary for the extraction or combination of fibres, but for further processing of the nano-scale cribellate fibres. Using data from Uloborus plumipes we were able to develop a model of the cribellate thread production, probably universally valid for cribellate spiders. Copyright © 2015 Elsevier Ltd. All rights reserved.

Analysis of the dislocation content in a deformed Co-based superalloy by transmission electron microscopy and X-ray diffraction

International Nuclear Information System (INIS)

Breuer, D.; Klimanek, P.; Muehle, U.; Martin, U.

1997-01-01

The present paper compares the dislocation densities as determined in a Co-based superalloy (CoNi22Cr22W14) after creep and tensile deformation by Transmission Electron Microscopy (TEM) and X-ray profile analysis (XRD). After creep tests the dislocation densities obtained by both methods are in good agreement, which is the result of a nearly homogeneous dislocation distribution. The relationship between the dislocation density and the flow stress meets the Taylor equation. After tensile deformation the dislocation densities determined by TEM and XRD differ systematically from each other, but in both cases also a Taylor relationship can be obtained. The constant α of the dislocation interaction derived by TEM is much larger than in the creep tests and also than that of the XRD, which agrees well with the creep data. The difference between the TEM and the XRD results is the consequence of the dislocation cell structure much more developed in the tensile specimens, which leads to an underestimation of the dislocation density in TEM because of overweighting the cell interior. By fitting the Fourier coefficients of the X-ray diffraction line shapes with a bimodal distribution of the defect content (composite model), dislocation densities of the cell interior can be estimated that correspond well to the TEM data. (orig.)

Creep Deformation by Dislocation Movement in Waspaloy.

Science.gov (United States)

Whittaker, Mark; Harrison, Will; Deen, Christopher; Rae, Cathie; Williams, Steve

2017-01-12

Creep tests of the polycrystalline nickel alloy Waspaloy have been conducted at Swansea University, for varying stress conditions at 700 °C. Investigation through use of Transmission Electron Microscopy at Cambridge University has examined the dislocation networks formed under these conditions, with particular attention paid to comparing tests performed above and below the yield stress. This paper highlights how the dislocation structures vary throughout creep and proposes a dislocation mechanism theory for creep in Waspaloy. Activation energies are calculated through approaches developed in the use of the recently formulated Wilshire Equations, and are found to differ above and below the yield stress. Low activation energies are found to be related to dislocation interaction with γ' precipitates below the yield stress. However, significantly increased dislocation densities at stresses above yield cause an increase in the activation energy values as forest hardening becomes the primary mechanism controlling dislocation movement. It is proposed that the activation energy change is related to the stress increment provided by work hardening, as can be observed from Ti, Ni and steel results.

Dislocation structure evolution and characterization in the compression deformed Mn-Cu alloy

International Nuclear Information System (INIS)

Zhong, Y.; Yin, F.; Sakaguchi, T.; Nagai, K.; Yang, K.

2007-01-01

Dislocation densities and dislocation structure arrangements in cold compressed polycrystalline commercial M2052 (Mn-20Cu-5Ni-2Fe) high damping alloy with various strains were determined in scanning mode by X-ray peak profile analysis and electron backscatter diffraction (EBSD). The results indicate that the Mn-Cu-Ni-Fe alloy has an evolution behavior quite similar to the dislocation structure in copper. The dislocation arrangement parameter shows a local minimum in the transition range between stages III and IV that can be related to the transformation of the dislocation arrangement in the cell walls from a polarized dipole wall (PDW) into a polarized tile wall (PTW) structure. This evolution is further confirmed by the results of local misorientation determined by EBSD. In addition, during deformation, the multiplication of dislocation densities in the MnCu alloy is significantly slower than that in copper, and the transition of the dislocation structure is strongly retarded in the MnCu alloy compared with copper. These results can be explained by the mechanism of elastic anisotropy on the dislocation dynamics, as the elastic anisotropy in the MnCu alloy is larger than that in copper, which can strongly retard the multiplication of the dislocation population and the transformation of the dislocation structure. These results are important for research into the plastic working behavior of Mn-Cu-Ni-Fe high damping alloy

Dislocation structure evolution in 304L stainless steel and weld joint during cyclic plastic deformation

Energy Technology Data Exchange (ETDEWEB)

Wang, Hao; Jing, Hongyang; Zhao, Lei; Han, Yongdian; Lv, Xiaoqing [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Advanced Joining Technology, Tianjin 300072 (China); Xu, Lianyong, E-mail: xulianyong@tju.edu.cn [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Advanced Joining Technology, Tianjin 300072 (China)

2017-04-06

Dislocation structures and their evolution of 304L stainless steel and weld metal made with ER308L stainless steel welding wire subjected to uniaxial symmetric strain-controlled loading and stress-controlled ratcheting loading were observed by transmission electron microscopy (TEM). The correlation between the cyclic response and the dislocation structure has been studied. The experiment results show that the cyclic behaviour of base metal and weld metal are different. The cyclic behaviour of the base metal consists of primary hardening, slight softening and secondary hardening, while the weld metal shows a short hardening within several cycles followed by the cyclic softening behaviour. The microscopic observations indicate that in base metal, the dislocation structures evolve from low density patterns to those with higher dislocation density during both strain cycling and ratcheting deformation. However, the dislocation structures of weld metal change oppositely form initial complicated structures to simple patterns and the dislocation density gradually decrease. The dislocation evolution presented during the strain cycling and ratcheting deformation is summarized, which can qualitatively explain the cyclic behaviour and the uniaxial ratcheting behaviour of two materials. Moreover, the dislocation evolution in the two types of tests is compared, which shows that the mean stress has an effect on the rate of dislocation evolution during the cyclic loading.

Influence of strain on dislocation core in silicon

Science.gov (United States)

Pizzagalli, L.; Godet, J.; Brochard, S.

2018-05-01

First principles, density functional-based tight binding and semi-empirical interatomic potentials calculations are performed to analyse the influence of large strains on the structure and stability of a 60? dislocation in silicon. Such strains typically arise during the mechanical testing of nanostructures like nanopillars or nanoparticles. We focus on bi-axial strains in the plane normal to the dislocation line. Our calculations surprisingly reveal that the dislocation core structure largely depends on the applied strain, for strain levels of about 5%. In the particular case of bi-axial compression, the transformation of the dislocation to a locally disordered configuration occurs for similar strain magnitudes. The formation of an opening, however, requires larger strains, of about 7.5%. Furthermore, our results suggest that electronic structure methods should be favoured to model dislocation cores in case of large strains whenever possible.

Rescue patient from tracheal obstruction by dislocated bronchial stent during tracheostomy surgery with readily available tools: A case report.

Science.gov (United States)

Chang, Hung-Yu; Man, Kee-Ming; Liao, Kate Hsiurong; Chiang, Yi-Ying; Chen, Kuen-Bao

2017-09-01

Airway stenting is a well-established method that relieves symptoms and maintains airway patency in patients with airway obstruction. Serious complications caused by airway stents such as stent dislocation and airway obstruction during surgery are life-threatening. An 80-year-old man was treated with bronchial stent for left bronchus obstruction caused by metastatic esophageal cancer. During tracheostomy surgery, he suffered from acute tracheal obstruction caused by dislocated bronchial stent. Esophageal cancer, left bronchus obstruction, respiratory failure, tracheal obstruction. Threading a 5.0-sized endotracheal tube combined with an Eschmann tracheal tube introducer to prop up the collapsed stent. The bronchial stent was re-expanded and threaded into right main bronchus and ventilation restored. Patient with airway stent undergoing surgery with airway involved should be performed under the support of a backup physician and equipment that are capable of handling potentially life-threatening complications of airway stent. If not, in the emergent situation of tracheal obstruction due to tracheal/bronchial stent, protruding through the stent with a suitable, small-sized endotracheal tube with Eschmann tracheal tube introducer may be an alternative skill for saving life weighted with possible complications.

Loading and Contact Stress Analysis on the Thread Teeth in Tubing and Casing Premium Threaded Connection

Directory of Open Access Journals (Sweden)

Honglin Xu

2014-01-01

Full Text Available Loading and contact stress distribution on the thread teeth in tubing and casing premium threaded connections are of great importance for design optimization, pretightening force control, and thread failure prevention. This paper proposes an analytical method based on the elastic mechanics. This is quite different from other papers, which mainly rely on finite element analysis. The differential equation of load distribution on the thread teeth was established according to equal pitch of the engaged thread after deformation and solved by finite difference method. Furthermore, the relation between load acting on each engaged thread and mean contact stress on its load flank is set up based on the geometric description of thread surface. By comparison, this new analytical method with the finite element analysis for a modified API 177.8 mm premium threaded connection is approved. Comparison of the contact stress on the last engaged thread between analytical model and FEM shows that the accuracy of analytical model will decline with the increase of pretightening force after the material enters into plastic deformation. However, the analytical method can meet the needs of engineering to some extent because its relative error is about 6.2%~18.1% for the in-service level of pretightening force.

Low energy dislocation structures due to unidirectional deformation at low temperatures

DEFF Research Database (Denmark)

Hansen, Niels; Kuhlmann-Wilsdorf, D.

1986-01-01

The line energy of dislocations is {Gb2f(v)/4π} 1n(R/b) with R range of the dislocation stress field from the axis. This equation implies that quasi-uniform distributions are unstable relative to dislocation clusters in which neighboring dislocations mutually screen their stress fields, correspon......The line energy of dislocations is {Gb2f(v)/4π} 1n(R/b) with R range of the dislocation stress field from the axis. This equation implies that quasi-uniform distributions are unstable relative to dislocation clusters in which neighboring dislocations mutually screen their stress fields......, correspondingly leaving the major fraction of the volume free of dislocations. The value of R decreases in the following order: pile-ups to dipolar mats, Taylor lattices, tilt and dipolar walls to dislocation cell structures. This is the same order in which dislocation structures tend to develop with increasing...... dislocation density and hence increased dislocation interactions, leading to the corresponding energy decrease per unit length of dislocation line. Taking into consideration also the longer-range “termination stresses” of finite dislocation boundaries, and minimizing the total energy, explains the size...

Mobile Thread Task Manager

Science.gov (United States)

Clement, Bradley J.; Estlin, Tara A.; Bornstein, Benjamin J.

2013-01-01

The Mobile Thread Task Manager (MTTM) is being applied to parallelizing existing flight software to understand the benefits and to develop new techniques and architectural concepts for adapting software to multicore architectures. It allocates and load-balances tasks for a group of threads that migrate across processors to improve cache performance. In order to balance-load across threads, the MTTM augments a basic map-reduce strategy to draw jobs from a global queue. In a multicore processor, memory may be "homed" to the cache of a specific processor and must be accessed from that processor. The MTTB architecture wraps access to data with thread management to move threads to the home processor for that data so that the computation follows the data in an attempt to avoid L2 cache misses. Cache homing is also handled by a memory manager that translates identifiers to processor IDs where the data will be homed (according to rules defined by the user). The user can also specify the number of threads and processors separately, which is important for tuning performance for different patterns of computation and memory access. MTTM efficiently processes tasks in parallel on a multiprocessor computer. It also provides an interface to make it easier to adapt existing software to a multiprocessor environment.

Optimization of bolt thread stress concentrations

DEFF Research Database (Denmark)

Pedersen, Niels Leergaard

2013-01-01

Designs of threaded fasteners are controlled by different standards, and the number of different thread definitions is large. The most commonly used thread is probably the metric ISO thread, and this design is therefore used in the present paper. Thread root design controls the stress concentration...... are found in the optimized designs leading to the proposal of a new standard. The reductions in the stress are achieved by rather simple changes made to the cutting tool....

Dislocation-like Structures in a Simulated Liquid

DEFF Research Database (Denmark)

Cotterill, Rodney M J

1979-01-01

The free-volume distribution in a simulated Lennard-Jones liquid is heterogeneous. Chains of holes, appearing as segments rather than a continuous network, have lifetimes that are brief compared with the mean vibration period of the atoms. Larger isolated holes persist for longer times. If the ch......The free-volume distribution in a simulated Lennard-Jones liquid is heterogeneous. Chains of holes, appearing as segments rather than a continuous network, have lifetimes that are brief compared with the mean vibration period of the atoms. Larger isolated holes persist for longer times....... If the chains are interpreted as dislocation cores, the observed dislocation density is 1.0×1014 cm-2, but the actual density is probably higher....

Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

International Nuclear Information System (INIS)

Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Kolesnikov, A. V.; Sokolov, L. V.

2007-01-01

Plastically relaxed GeSi films with the Ge fraction equal to 0.29-0.42 and thickness as large as 0.5 μm were grown on Si (001) substrates using the low-temperature (350 deg. C) buffer Si layer and Sb as a surfactant. It is shown that introduction of Sb that smoothens the film surface at the stage of pseudomorphic growth lowers the density of threading dislocations in the plastically relaxed heterostructure by 1-1.5 orders of magnitude and also reduces the final roughness of the surface. The root-mean-square value of roughness smaller than 1 nm was obtained for a film with the Ge content of 0.29 and the density of threading dislocations of about 10 6 cm -2 . It is assumed that the effect of surfactant is based on the fact that the activity of surface sources of dislocations is reduced in the presence of Sb

The Advanced Thread-Locking Mechanism

Science.gov (United States)

Weiss, Wolfgang

2005-12-01

Locking of threaded members is accomplished by a wide variety of engineering solutions. Generally, in terms of separate locking devices or by built-in locking features such as friction generating means.In regard of space flight vehicles, threaded joints are subject to severe vibration loads during launch, maneuvering, and reentry. This requires fastening systems which are capable to join structural members and attach accessories or equipment in a secure manner. However, manned spacecraft and especially payload components will be subject to installation activity during orbital or interstellar flight maintenance, repair, or mission modification. This, in turn, requires fast separation and engaging of the concerned fasteners, yet providing performance characteristics for high reliable and safe joints.The further described Advanced Thread Locking Mechanism (ATLM) has been developed to combine the merits of both, safe joining technique and a fast installation process. The ATLM uses a freewheel which is securely installed in one part of the threaded member and releasable coupled with the engaged counterpart. While screwing the threaded members together, once coupled, the freewheel will allow free mating of the threaded members including torquing to the desired value. The moment, the pair of threaded fasteners is forced to unscrew (by intended or unintended occurrence of torque in the undoing direction) the freewheel does lock instantly. Disengaging the coupling between the members of the threaded joint takes a separate release action.Owing to the nature of the ATLM, there are a number of design variants ready for implementation.Threaded fasteners in ATLM design are highly recommended for mechanical joints subject to fastening and unfastening during Extra Vehicular Activity (EVA) in course of space flight operations. This is justified through:1. Threaded members mate free running, thus, torque values preset at the wrenching tool are not influenced by varying prevailing

Electron microscope investigation into dislocation structure of cast aluminium alloys

International Nuclear Information System (INIS)

Zolotorevskij, V.S.; Orelkina, T.A.; Istomin-Kastrovskij, V.V.

1978-01-01

By applying the diffraction electron microscopy method, the general specific features of the disclocation structure of cast binary alloys of aluminium with different additions were established. It is shown that in most alloys, when they undergo cooling in the process of crystallization at the rate of about 850 deg/min, the cellular dislocation structure is formed. It is shown that in all the alloys studied, the total density of dislocations of one order is about-10 9 cm -2 , which exceeds by 1 to 2 orders of magnitude the value which follows from the Tiller theory of concentration stresses. It has been experimentally established that the contribution of shrinkage and thermal stresses to the formation of a dislocation structure is rather insignificant; yet the dislocation density values calculated according to the size of dendritic cells and the medium angles of their disorientation are close to those determined by the electron-microscopic method. This is the basis for making a supposition that the greater part of the dislocations in castings are formed as a result of comparing dendritic branches with one another, which are disoriented in respect to each other

Analytical X-ray line profile analysis based upon correlated dislocations

International Nuclear Information System (INIS)

Rao, S.; Houska, C.R.

1988-01-01

Recent advances describing X-ray line profiles analytically, in terms of a minimum number of parameters, are related to a theory based upon correlated dislocations. It is shown that a multiple convolution approach, based upon the Warren-Averbach (W-A) analysis, leads to a form that closely approximates the strain coefficient obtained by Krivoglaz, Martynenko and Ryaboshopka. This connection enables one to determine the dislocation density and the ratio of the correlation range parameter to the mean particle size. These two results are obtained most accurately from previous analytical approaches which make use of a statistical least-squares analysis. The W-A Fourier-series approach provides redundant information and does not focus on the critical parameters that relate to dislocation theory. Results so far are limited to b.c.c. materials. Results for cold-worked W, Mo, Nb, Cr and V are compared with highly imperfect sputtered films of Mo. A major difference is relatable to higher correlation of dislocations in cold-worked metals than is found in sputtered films deposited at low temperatures. However, in each case, the dislocation density is high. (orig.)

Two years' outcome of thread lifting with absorbable barbed PDO threads: Innovative score for objective and subjective assessment.

Science.gov (United States)

Ali, Yasser Helmy

2018-02-01

Thread-lifting rejuvenation procedures have evolved again, with the development of absorbable threads. Although they have gained popularity among plastic surgeons and dermatologists, very few articles have been written in literature about absorbable threads. This study aims to evaluate two years' outcome of thread lifting using absorbable barbed threads for facial rejuvenation. Prospective comparative stud both objectively and subjectively and follow-up assessment for 24 months. Thread lifting for face rejuvenation has significant long-lasting effects that include skin lifting from 3-10 mm and high degree of patients' satisfaction with less incidence rate of complications, about 4.8%. Augmented results are obtained when thread lifting is combined with other lifting and rejuvenation modalities. Significant facial rejuvenation is achieved by thread lifting and highly augmented results are observed when they are combined with Botox, fillers, and/or platelet rich plasma (PRP) rejuvenations.

Work Hardening, Dislocation Structure, and Load Partitioning in Lath Martensite Determined by In Situ Neutron Diffraction Line Profile Analysis

Science.gov (United States)

Harjo, Stefanus; Kawasaki, Takuro; Tomota, Yo; Gong, Wu; Aizawa, Kazuya; Tichy, Geza; Shi, Zengmin; Ungár, Tamas

2017-09-01

A lath martensite steel containing 0.22 mass pct carbon was analyzed in situ during tensile deformation by high-resolution time-of-flight neutron diffraction to clarify the large work-hardening behavior at the beginning of plastic deformation. The diffraction peaks in plastically deformed states exhibit asymmetries as the reflection of redistributions of the stress and dislocation densities/arrangements in two lath packets: soft packet, where the dislocation glides are favorable, and hard packet, where they are unfavorable. The dislocation density was as high as 1015 m-2 in the as-heat-treated state. During tensile straining, the load and dislocation density became different between the two lath packets. The dislocation character and arrangement varied in the hard packet but hardly changed in the soft packet. In the hard packet, dislocations that were mainly screw-type in the as-heat-treated state became primarily edge-type and rearranged towards a dipole character related to constructing cell walls. The hard packet played an important role in the work hardening in martensite, which could be understood by considering the increase in dislocation density along with the change in dislocation arrangement.

Development of Epitaxial GaN Films for RF Communications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

A dislocation-based crystal plasticity framework for dynamic ductile failure of single crystals

Science.gov (United States)

Nguyen, Thao; Luscher, D. J.; Wilkerson, J. W.

2017-11-01

A framework for dislocation-based viscoplasticity and dynamic ductile failure has been developed to model high strain rate deformation and damage in single crystals. The rate-dependence of the crystal plasticity formulation is based on the physics of relativistic dislocation kinetics suited for extremely high strain rates. The damage evolution is based on the dynamics of void growth, which are governed by both micro-inertia as well as dislocation kinetics and dislocation substructure evolution. An averaging scheme is proposed in order to approximate the evolution of the dislocation substructure in both the macroscale as well as its spatial distribution at the microscale. Additionally, a concept of a single equivalent dislocation density that effectively captures the collective influence of dislocation density on all active slip systems is proposed here. Together, these concepts and approximations enable the use of semi-analytic solutions for void growth dynamics developed in (Wilkerson and Ramesh, 2014), which greatly reduce the computational overhead that would otherwise be required. The resulting homogenized framework has been implemented into a commercially available finite element package, and a validation study against a suite of direct numerical simulations was carried out.

Hydrogen diffusion in the elastic fields of dislocations in iron

Energy Technology Data Exchange (ETDEWEB)

Sivak, A. B., E-mail: Sivak-AB@nrcki.ru; Sivak, P. A. [National Research Centre Kurchatov Institute (Russian Federation); Romanov, V. A.; Chernov, V. M. [National Research Tomsk State University (Russian Federation)

2016-12-15

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10{sup 14} m{sup –2} in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉(110), 〈111〉(112), 〈100〉(100), and 〈100〉(110) are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.

Dislocation density and Burgers vector population in fiber-textured Ni thin films determined by high-resolution X-ray line profile analysis

DEFF Research Database (Denmark)

Csiszár, Gábor; Pantleon, Karen; Alimadadi, Hossein

2012-01-01

distribution are determined by high-resolution X-ray diffraction line profile analysis. The substructure parameters are correlated with the strength of the films by using the combined Taylor and Hall-Petch relations. The convolutional multiple whole profile method is used to obtain the substructure parameters......Nanocrystalline Ni thin films have been produced by direct current electrodeposition with different additives and current density in order to obtain 〈100〉, 〈111〉 and 〈211〉 major fiber textures. The dislocation density, the Burgers vector population and the coherently scattering domain size...

Real-time inextensible surgical thread simulation.

Science.gov (United States)

Xu, Lang; Liu, Qian

2018-03-27

This paper discusses a real-time simulation method of inextensible surgical thread based on the Cosserat rod theory using position-based dynamics (PBD). The method realizes stable twining and knotting of surgical thread while including inextensibility, bending, twisting and coupling effects. The Cosserat rod theory is used to model the nonlinear elastic behavior of surgical thread. The surgical thread model is solved with PBD to achieve a real-time, extremely stable simulation. Due to the one-dimensional linear structure of surgical thread, the direct solution of the distance constraint based on tridiagonal matrix algorithm is used to enhance stretching resistance in every constraint projection iteration. In addition, continuous collision detection and collision response guarantee a large time step and high performance. Furthermore, friction is integrated into the constraint projection process to stabilize the twining of multiple threads and complex contact situations. Through comparisons with existing methods, the surgical thread maintains constant length under large deformation after applying the direct distance constraint in our method. The twining and knotting of multiple threads correspond to stable solutions to contact and friction forces. A surgical suture scene is also modeled to demonstrate the practicality and simplicity of our method. Our method achieves stable and fast simulation of inextensible surgical thread. Benefiting from the unified particle framework, the rigid body, elastic rod, and soft body can be simultaneously simulated. The method is appropriate for applications in virtual surgery that require multiple dynamic bodies.

Spatial organization of plastic deformation in single crystals with different structure of slip dislocation

Energy Technology Data Exchange (ETDEWEB)

Kunitsyna, T. S.; Teplyakova, L. A., E-mail: lat168@mail.ru; Koneva, N. A. [Tomsk State University of Architecture and Building, Tomsk, 634003 (Russian Federation); Poltaranin, M. A. [National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)

2015-10-27

It is established that different structure of slip dislocation at the end of the linear hardening stage results in different distribution of dislocation charges in the volume of a single crystal. In the alloy with a near atomic order the slip of single dislocations leads to formation of planar structures—layers with the excess density of dislocations. In the alloy with long-range atomic order the slip of superdislocations brings the formation of the system of parallel rod-like charged dislocation linking.

Genetic algorithms for protein threading.

Science.gov (United States)

Yadgari, J; Amir, A; Unger, R

1998-01-01

Despite many years of efforts, a direct prediction of protein structure from sequence is still not possible. As a result, in the last few years researchers have started to address the "inverse folding problem": Identifying and aligning a sequence to the fold with which it is most compatible, a process known as "threading". In two meetings in which protein folding predictions were objectively evaluated, it became clear that threading as a concept promises a real breakthrough, but that much improvement is still needed in the technique itself. Threading is a NP-hard problem, and thus no general polynomial solution can be expected. Still a practical approach with demonstrated ability to find optimal solutions in many cases, and acceptable solutions in other cases, is needed. We applied the technique of Genetic Algorithms in order to significantly improve the ability of threading algorithms to find the optimal alignment of a sequence to a structure, i.e. the alignment with the minimum free energy. A major progress reported here is the design of a representation of the threading alignment as a string of fixed length. With this representation validation of alignments and genetic operators are effectively implemented. Appropriate data structure and parameters have been selected. It is shown that Genetic Algorithm threading is effective and is able to find the optimal alignment in a few test cases. Furthermore, the described algorithm is shown to perform well even without pre-definition of core elements. Existing threading methods are dependent on such constraints to make their calculations feasible. But the concept of core elements is inherently arbitrary and should be avoided if possible. While a rigorous proof is hard to submit yet an, we present indications that indeed Genetic Algorithm threading is capable of finding consistently good solutions of full alignments in search spaces of size up to 10(70).

Thread Structure: Rewriting the Hollywood Formula.

Science.gov (United States)

Smith, Evan

2000-01-01

Describes a new nonlinear model that has crept into Hollywood's cinematic repertoire in which multiple story threads comprise the story. Examines how this thread structure differs from ensemble stories. Examines differences between traditionally linear films and films with thread structure regarding character roles and viewer orientation, shifts…

Dislocation/hydrogen interaction mechanisms in hydrided nanocrystalline palladium films

International Nuclear Information System (INIS)

Amin-Ahmadi, Behnam; Connétable, Damien; Fivel, Marc; Tanguy, Döme; Delmelle, Renaud; Turner, Stuart; Malet, Loic; Godet, Stephane; Pardoen, Thomas; Proost, Joris; Schryvers, Dominique

2016-01-01

The nanoscale plasticity mechanisms activated during hydriding cycles in sputtered nanocrystalline Pd films have been investigated ex-situ using advanced transmission electron microscopy techniques. The internal stress developing within the films during hydriding has been monitored in-situ. Results showed that in Pd films hydrided to β-phase, local plasticity was mainly controlled by dislocation activity in spite of the small grain size. Changes of the grain size distribution and the crystallographic texture have not been observed. In contrast, significant microstructural changes were not observed in Pd films hydrided to α-phase. Moreover, the effect of hydrogen loading on the nature and density of dislocations has been investigated using aberration-corrected TEM. Surprisingly, a high density of shear type stacking faults has been observed after dehydriding, indicating a significant effect of hydrogen on the nucleation energy barriers of Shockley partial dislocations. Ab-initio calculations of the effect of hydrogen on the intrinsic stable and unstable stacking fault energies of palladium confirm the experimental observations.

Ab-Initio Simulation of a/2 Screw Dislocations Gamma-TiAl

National Research Council Canada - National Science Library

Woodward, C; Rao, S. I

2004-01-01

...The equilibrium core structure of an isolated a/2screw dislocations is calculated using a first-principles pseudopotential-planewave method within the Local Density Approximation of Density Functional Theory...

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

Science.gov (United States)

Termentzidis, Konstantinos; Isaiev, Mykola; Salnikova, Anastasiia; Belabbas, Imad; Lacroix, David; Kioseoglou, Joseph

2018-02-14

We report the thermal transport properties of wurtzite GaN in the presence of dislocations using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration are analyzed and found to considerably reduce the thermal conductivity while impacting its temperature dependence in a different manner. Isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T -1 variation in combination with an exponent factor that depends on the material's nature, type and the structural characteristics of the dislocation core. Furthermore, the impact of the dislocation density on the thermal conductivity of bulk GaN is examined. The variation and absolute values of the total thermal conductivity as a function of the dislocation density are similar for defected systems with both screw and edge dislocations. Nevertheless, we reveal that the thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are different. The discrepancy of the anisotropy of the thermal conductivity grows with increasing density of dislocations and it is more pronounced for the systems with edge dislocations. Besides the fundamental insights of the presented results, these could also be used for the identification of the type of dislocations when one experimentally obtains the evolution of thermal conductivity with temperature since each type of dislocation has a different signature, or one could extract the density of dislocations with a simple measurement of thermal anisotropy.

Static strain aging of Zircaloy-2: the effect of dislocation dynamics on yielding behaviour

International Nuclear Information System (INIS)

Thorpe, W.R.; Smith, I.O.

1981-01-01

The static strain-aging response of Zircaloy-2 was determined in the temperature range 293-723 K. A modified Hahn yielding model was found to provide a satisfactory description of the magnitude and shape of the yield points after aging, thereby providing information about the mobile dislocation density and the dislocation generation rate. For example, the characteristic double peak in the temperature dependence of strain aging was simplified to a single broad minimum in the mobile dislocation density over the temperature interval 500-700 K. The shape of the yield point was also found to be temperature dependent; the yield drop became less sharp at test temperatures above 648 K. This was ascribed to the inhibition of dislocation multiplication by dynamic strain aging. A kinetic law was developed by applying Snoek ordering kinetics to the process of dislocation locking and the resultant change in mobile dislocation density was then used to predict the strain-aging response as a function of aging time. The stress dependence of strain aging at 573 K was investigated at aging stresses of between 0.07 and 0.975 of the flow stress sigmasub(f). The strain-aging response increased for aging at stresses between 0.07sigmassub(f) and 0.8sigmasub(f), whereafter it declined steeply to the limit of zero at the flow stress. (Auth.)

The effect of thread pattern upon implant osseointegration.

Science.gov (United States)

Abuhussein, Heba; Pagni, Giorgio; Rebaudi, Alberto; Wang, Hom-Lay

2010-02-01

Implant design features such as macro- and micro-design may influence overall implant success. Limited information is currently available. Therefore, it is the purpose of this paper to examine these factors such as thread pitch, thread geometry, helix angle, thread depth and width as well as implant crestal module may affect implant stability. A literature search was conducted using MEDLINE to identify studies, from simulated laboratory models, animal, to human, related to this topic using the keywords of implant thread, implant macrodesign, thread pitch, thread geometry, helix angle, thread depth, thread width and implant crestal module. The results showed how thread geometry affects the distribution of stress forces around the implant. A decreased thread pitch may positively influence implant stability. Excess helix angles in spite of a faster insertion may jeopardize the ability of implants to sustain axial load. Deeper threads seem to have an important effect on the stabilization in poorer bone quality situations. The addition of threads or microthreads up to the crestal module of an implant might provide a potential positive contribution on bone-to to-implant contact as well as on the preservation of marginal bone; nonetheless this remains to be determined. Appraising the current literature on this subject and combining existing data to verify the presence of any association between the selected characteristics may be critical in the achievement of overall implant success.

Micro-strain, dislocation density and surface chemical state analysis of multication thin films

Energy Technology Data Exchange (ETDEWEB)

Jayaram, P., E-mail: jayarampnair@gmail.com [Department of Physics, MES Ponnani College Ponnani, Kerala (India); Pradyumnan, P.P. [Department of Physics, University of Calicut, Kerala 673 635 (India); Karazhanov, S.Zh. [Department for Solar Energy, Institute for Energy Technology, Kjeller (Norway)

2016-11-15

Multication complex metal oxide thin films are rapidly expanding the class of materials with many technologically important applications. Herein this work, the surface of the pulsed laser deposited thin films of Zn{sub 2}SnO{sub 4} and multinary compounds obtained by substitution/co-substitution of Sn{sup 4+} with In{sup 3+} and Ga{sup 3+} are studied by X-ray photoelectron emission spectroscopy (X-PES) method. Peaks corresponding to the elements of Zn, Sn, Ga, In and O on the film surface has been identified and contribution of the elements has been studied by the computer aided surface analysis (CASA) software. Binding energies, full-width at half maximum (FWHM), spin-orbit splitting energies, asymmetric peak-shape fitting parameters and quantification of elements in the films are discussed. Studies of structural properties of the films by x-ray diffraction (XRD) technique showed inverse spinel type lattice with preferential orientation. Micro-strain, dislocation density and crystallite sizes in the film surface have been estimated.

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2017-08-01

Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

Dislocation climb models from atomistic scheme to dislocation dynamics

OpenAIRE

Niu, Xiaohua; Luo, Tao; Lu, Jianfeng; Xiang, Yang

2016-01-01

We develop a mesoscopic dislocation dynamics model for vacancy-assisted dislocation climb by upscalings from a stochastic model on the atomistic scale. Our models incorporate microscopic mechanisms of (i) bulk diffusion of vacancies, (ii) vacancy exchange dynamics between bulk and dislocation core, (iii) vacancy pipe diffusion along the dislocation core, and (iv) vacancy attachment-detachment kinetics at jogs leading to the motion of jogs. Our mesoscopic model consists of the vacancy bulk dif...

A Moiré Pattern-Based Thread Counter

Science.gov (United States)

Reich, Gary

2017-10-01

Thread count is a term used in the textile industry as a measure of how closely woven a fabric is. It is usually defined as the sum of the number of warp threads per inch (or cm) and the number of weft threads per inch. (It is sometimes confusingly described as the number of threads per square inch.) In recent years it has also become a subject of considerable interest and some controversy among consumers. Many consumers consider thread count to be a key measure of the quality or fineness of a fabric, especially bed sheets, and they seek out fabrics that advertise high counts. Manufacturers in turn have responded to this interest by offering fabrics with ever higher claimed thread counts (sold at ever higher prices), sometime achieving the higher counts by distorting the definition of the term with some "creative math." In 2005 the Federal Trade Commission noted the growing use of thread count in advertising at the retail level and warned of the potential for consumers to be misled by distortions of the definition.

Residual carrier density in GaSb grown on Si substrates

International Nuclear Information System (INIS)

Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

2006-01-01

The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 x 10 8 /cm 2 although the density near the interface between the Si substrate and the GaSb film was about 3 x 10 9 /cm 2 . Forming a dislocation loop by growing a thick GaSb layer may decrease the dislocation density. The density and mobility of the residual carrier were investigated by Hall measurement using the van der Pauw method. The residual carriers in GaSb grown on Si substrates were holes, and their densities decreased significantly from 4.2 x 10 18 to 1.4 x 10 17 /cm 3 as GaSb thickness was increased from 500 to 5500 nm

Defect sensitive etching of hexagonal boron nitride single crystals

Science.gov (United States)

Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

2017-12-01

Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

Dislocation dynamics modelling of radiation damage in thin films

International Nuclear Information System (INIS)

Ferroni, Francesco; Tarleton, Edmund; Fitzgerald, Steven

2014-01-01

Transmission electron microscopy is a key tool for the extraction of information on radiation damage, the understanding of which is critical for materials development for nuclear fusion and fission reactors. Dislocations in TEM samples are subject to strong image forces, owing to the nanometric sample thicknesses, which may introduce artifacts in the damage analysis. Using dislocation dynamics, we elucidate the roles played by dislocation–surface interactions, dislocation–dislocation interactions and self-interactions due to climb for loop types observed in TEM. Comparisons with analytic solutions for a dislocation loop and an edge dislocation in a half-space are included, and the relationship between glide force and loop tilt examined. The parameters for convergence of the zero-traction boundary conditions are obtained, after which the evolution of dislocation structures in a thin film is studied. It is found that three main length scales govern the physical processes: the image force is governed by the distance of the loop from the surface and scales with the film thickness; the glide force is governed by the image stress as well as the loop–loop interaction stress which is in turn governed by the loop spacing L∼1/√ρ, where ρ is the loop density; finally, the climb force depends on the loop size. The three forces compete and their relative magnitudes define the evolution pathway of the dislocation structure. (paper)

Dynamic mechanical behaviour and dislocation substructure evolution of Inconel 718 over wide temperature range

Energy Technology Data Exchange (ETDEWEB)

Lee, Woei-Shyan, E-mail: wslee@mail.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Chi-Feng [National Center for High-Performance Computing, Hsin-Shi Tainan County 744, Taiwan (China); Chen, Tao-Hsing [Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan (China); Chen, Hong-Wei [Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

2011-07-25

A compressive split-Hopkinson pressure bar and transmission electron microscope (TEM) are used to investigate the mechanical behaviour and microstructural evolution of Inconel 718 at strain rates ranging from 1000 to 5000 s{sup -1} and temperatures between -150 and 550 deg. C. The results show that the flow stress increases with an increasing strain rate or a reducing temperature. The strain rate effect is particularly pronounced at strain rates greater than 3000 s{sup -1} and a deformation temperature of -150 deg. C. A significant thermal softening effect occurs at temperatures between -150 and 25 deg. C. The microstructural observations reveal that the strengthening effect in deformed Inconel 718 alloy is a result primarily of dislocation multiplication. The dislocation density increases with increasing strain rate, but decreases with increasing temperature. By contrast, the dislocation cell size decreases with increasing strain rate, but increases with increasing temperature. It is shown that the correlation between the flow stress, the dislocation density and the dislocation cell size is well described by the Bailey-Hirsch constitutive equations.

Dislocation Strengthening without Ductility Trade-off in Metastable Austenitic Steels

Science.gov (United States)

Liu, Jiabin; Jin, Yongbin; Fang, Xiaoyang; Chen, Chenxu; Feng, Qiong; Liu, Xiaowei; Chen, Yuzeng; Suo, Tao; Zhao, Feng; Huang, Tianlin; Wang, Hongtao; Wang, Xi; Fang, Youtong; Wei, Yujie; Meng, Liang; Lu, Jian; Yang, Wei

2016-10-01

Strength and ductility are mutually exclusive if they are manifested as consequence of the coupling between strengthening and toughening mechanisms. One notable example is dislocation strengthening in metals, which invariably leads to reduced ductility. However, this trend is averted in metastable austenitic steels. A one-step thermal mechanical treatment (TMT), i.e. hot rolling, can effectively enhance the yielding strength of the metastable austenitic steel from 322 ± 18 MPa to 675 ± 15 MPa, while retaining both the formability and hardenability. It is noted that no boundaries are introduced in the optimized TMT process and all strengthening effect originates from dislocations with inherited thermal stability. The success of this method relies on the decoupled strengthening and toughening mechanisms in metastable austenitic steels, in which yield strength is controlled by initial dislocation density while ductility is retained by the capability to nucleate new dislocations to carry plastic deformation. Especially, the simplicity in processing enables scaling and industrial applications to meet the challenging requirements of emissions reduction. On the other hand, the complexity in the underlying mechanism of dislocation strengthening in this case may shed light on a different route of material strengthening by stimulating dislocation activities, rather than impeding motion of dislocations.

Dislocation structures and mechanical behaviour of Ge single crystals deformed by compression

International Nuclear Information System (INIS)

Nyilas, K.; Dupas, C.; Kruml, T.; Zsoldos, L.; Ungar, T.; Martin, J.L.

2004-01-01

Stress-strain curves of germanium interrupted by dip tests reveal that the internal stresses ascend parallel to the applied stress in a strain-rate dependent way. To understand this peculiar behaviour, the dislocation microstructure has been characterized. Transmission electron microscopy images show that regions of high dislocation activity along the primary slip system are separated by dislocation-free zones. X-ray microdiffraction reveals that the dislocation density is fluctuating on a 100 μm scale. X-ray reciprocal-space mapping, together with scanning microdiffraction, shows that misoriented mosaic blocks are forming owing to the boundary conditions in the compression test. These preliminary results reveal deformation heterogeneity both at macroscopic and mesoscopic scales

Dislocations and radiation damage in α-uranium

International Nuclear Information System (INIS)

Leteurtre, J.

1969-01-01

Dislocations in α-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in α-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [fr

[Elbow dislocation].

Science.gov (United States)

de Pablo Márquez, B; Castillón Bernal, P; Bernaus Johnson, M C; Ibañez Aparicio, N M

Elbow dislocation is the most frequent dislocation in the upper limb after shoulder dislocation. Closed reduction is feasible in outpatient care when there is no associated fracture. A review is presented of the different reduction procedures. Copyright © 2017 Sociedad Española de Médicos de Atención Primaria (SEMERGEN). Publicado por Elsevier España, S.L.U. All rights reserved.

Characterisation of defects in p-GaN by admittance spectroscopy

International Nuclear Information System (INIS)

Elsherif, O.S.; Vernon-Parry, K.D.; Evans-Freeman, J.H.; Airey, R.J.; Kappers, M.; Humphreys, C.J.

2012-01-01

Mg-doped GaN films have been grown on (0 0 0 1) sapphire using metal organic vapour phase epitaxy. Use of different buffer layer strategies caused the threading dislocation density (TDD) in the GaN to be either approximately 2×10 9 cm -2 or 1×10 10 cm -2 . Frequency-dependent capacitance and conductance measurements at temperatures up to 450 K have been used to study the electronic states associated with the Mg doping, and to determine how these are affected by the TDD. Admittance spectroscopy of the films finds a single impurity-related acceptor level with an activation energy of 160±10 meV for [Mg] of about 1×10 19 cm -3 , and 120±10 eV as the Mg precursor flux decreased. This level is thought to be associated with the Mg acceptor state. The TDD has no discernible effect on the trap detected by admittance spectroscopy. We compare these results with cathodoluminescence measurements reported in the literature, which reveal that most threading dislocations are non-radiative recombination centres, and discuss possible reasons why our admittance spectroscopy have not detected electrically active defects associated with threading dislocations.

Optically variable threads and polarization effects

Science.gov (United States)

Kretschmar, Friedrich; Burchard, Theodor; Heim, Manfred

2006-02-01

Based on common criteria for efficient security elements for banknotes the set-up of a state-of-the-art holographic security thread is described - as first representative of window embedded OVD. We continue with new colour-shifting OVD-threads - based on physical vapour deposition thin-film and liquid crystal technology. These three then form the family of optically variable threads following the same set of requirements for efficiency, durability, service to all authentication levels and economics. In addition to this set of OVD threads we introduce how liquid crystal based phase retarding layer can be used to install new authentication channels for the public use up-to machine authentication. Also we show the perspective how those development can be used to install similar sets of OVD families of foil elements on banknotes.

AN MHD AVALANCHE IN A MULTI-THREADED CORONAL LOOP

Energy Technology Data Exchange (ETDEWEB)

Hood, A. W.; Cargill, P. J.; Tam, K. V. [School of Mathematics and Statistics, University of St Andrews, St Andrews, Fife, KY16 9SS (United Kingdom); Browning, P. K., E-mail: awh@st-andrews.ac.uk [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

2016-01-20

For the first time, we demonstrate how an MHD avalanche might occur in a multithreaded coronal loop. Considering 23 non-potential magnetic threads within a loop, we use 3D MHD simulations to show that only one thread needs to be unstable in order to start an avalanche even when the others are below marginal stability. This has significant implications for coronal heating in that it provides for energy dissipation with a trigger mechanism. The instability of the unstable thread follows the evolution determined in many earlier investigations. However, once one stable thread is disrupted, it coalesces with a neighboring thread and this process disrupts other nearby threads. Coalescence with these disrupted threads then occurs leading to the disruption of yet more threads as the avalanche develops. Magnetic energy is released in discrete bursts as the surrounding stable threads are disrupted. The volume integrated heating, as a function of time, shows short spikes suggesting that the temporal form of the heating is more like that of nanoflares than of constant heating.

Nucleation of dislocations from [0 0 1] bicrystal interfaces in aluminum

International Nuclear Information System (INIS)

Spearot, Douglas E.; Jacob, Karl I.; McDowell, David L.

2005-01-01

It is well established from molecular dynamics simulations that grain boundaries in nanocrystalline samples serve as sources of dislocations. In this work, we use molecular dynamics simulations to study the mechanisms associated with dislocation nucleation from bicrystal [0 0 1] interfaces in aluminum. Three interface misorientations are studied, including the Σ5 (3 1 0) boundary, which has a high density of coincident atomic sites. Molecular dynamics simulations show that full dislocation loops are nucleated from each interface during uniaxial tension. After the second partial dislocation is emitted, a ledge remains within the interface at the intersection of the slip plane and the bicrystal boundary. A disclination dipole model is proposed for the structure of the distorted interface accounting for local lattice rotations and the ledge at the nucleation site

Subtalar dislocation

International Nuclear Information System (INIS)

El-Khoury, G.Y.; Yousefzadeh, D.K.; Mulligan, G.M.; Moore, T.E.

1982-01-01

Over a period of three years we have seen nine patients with subtalar dislocation, all of whom sustained violent trauma to the region of the ankle and hind foot. All but one patient were males. Clinically a subtalar dislocation resembles a complicated fracture dislocation of the ankle but a definitive diagnosis can only be made radiographically. The mechanism of injury and radiographic features of this injury are discussed. (orig.)

The Influence of the Properties of Embroidery Threads on Buckling of Fabric Inside of the Embroidered Element

Directory of Open Access Journals (Sweden)

Svetlana RADAVIČIENĖ

2012-12-01

Full Text Available In production of garments, embroidery carries out a variety of functions, one of which is the aesthetic appearance of the product improvement. The resulting defects, are seen as a negative indicator of the product quality. The discrepancy of the embroidered element to the digital design in size is a defect, which is influenced by the embroidery threads, embroidery materials properties and process parameters. The fabric sorrounded by the embroidery threads between adjancent needle penetrations inside of the embroidered element is compressed, buckling. The aim of this paper is to investigate the influence of the properties of embroidery threads on buckling of fabric inside of the embroidered element. For investigations specimens were prepared using different fibre composition, density and linear structure of the embroidery threads. Specimens were cut and photo-captured at the beginning, middle and end of the embroidered element.  It was found, that different properties of the embroidery threads affecting on the different behavior of fabric inside of the embroidered element. The results of the investigations showed that the fabric inside of the embroidered element formed larger waves of buckling using the maximum elongation of the feedback exhibiting embroidery thread.DOI: http://dx.doi.org/10.5755/j01.ms.18.4.3100

Orientation-dependent evolution of the dislocation density in grain populations with different crystallographic orientations relative to the tensile axis in a polycrystalline aggregate of stainless steel

International Nuclear Information System (INIS)

Ungár, Tamás; Stoica, Alexandru D.; Tichy, Géza; Wang, Xun-Li

2014-01-01

Line profile analysis was carried out on neutron diffraction patterns collected by the energy-dispersive method for an in situ tensile-deformed AISI-316 stainless steel specimen. The experiments were carried out at the VULCAN engineering beam line of the spallation neutron source of the Oak Ridge National Laboratory. Both the dislocation densities and the local stresses in grains oriented with different h k l crystal directions along the tensile axis were determined. The work-hardening equation of Taylor was tested for the h k l-dependent phenomenological constant α. The grain-orientation-dependent α values were directly related to the heterogeneity of dislocation distribution in correlation with previous transmission electron microscopy data

Threaded cognition : An integrated theory of concurrent multitasking

NARCIS (Netherlands)

Salvucci, Dario D.; Taatgen, Niels A.

The authors propose the idea of threaded cognition, an integrated theory of concurrent multitasking-that is, performing 2 or more tasks at once. Threaded cognition posits that streams of thought can be represented as threads of processing coordinated by a serial procedural resource and executed

Determination of the Tapping Part Diameter of the Thread Mill

Directory of Open Access Journals (Sweden)

A. E. Dreval'

2015-01-01

Full Text Available Currently, there is a tendency to increase the proportion of thread milling operations, among other ways of tapping, which is associated with increasing number of CNC machines, flexibility and versatility of the process.Developments presently existing in the RF and used in the thread mills deal, mainly, with the thread milling cutter designs, to process internal and external thread with straight flutes made from high-speed steel.The paper presents a technique to calculate and select the initial design parameters, i.e. the external diameter of the tapping part of thread milling cutter, which is chosen as a basic computational design. The analysis of directories of tool companies containing foreign de-signs of solid thread end-milling cutters has shown that most of them rep-resent the thread cutter designs made of solid carbide. There are solid and interlocking side milling cutters, which use a tapping part both as a single-disk and as a multi-disk one; chip flutes are made to be both as direct and as screw; solid designs of cutters are made from carbide with a diameter of up to 20 ... 25 mm; thread cutters can be left- and right-hand cutting; Designs of the combined thread mills are proposed; internal channels are used for coolant supply.It is shown that the purpose of the external diameter of the tapping part of the thread mill should take into account the effect of the thread mill diameter on the milling process performance, precision of thread profile received, taper thread, tool strength, and the volume of flutes.The analysis has shown that when choosing the external diameter of the thread mill it worth taking its maximum diameter to improve the char-acteristics of the process under the restrictions imposed on the accuracy of the formed thread.

Dislocation-dynamics method

International Nuclear Information System (INIS)

Van Brutzel, L.

2015-01-01

Dislocation-Dynamics (DD) technique is identified as the method able to model the evolution of material plastic properties as a function of the microstructural transformation predicted at the atomic scale. Indeed, it is the only simulation method capable of taking into account the collective behaviour of a large number of dislocations inside a realistic microstructure. DD simulations are based on the elastic dislocation theory following rules inherent to the dislocation core structure often call 'local rules'. All the data necessary to establish the local rules for DD have to come directly from experiment or alternatively from simulations carried out at the atomic scale such as molecular dynamics or ab initio calculations. However, no precise information on the interaction between two dislocations or between dislocations and defects induced by irradiation are available for nuclear fuels. Therefore, in this article the DD technique will be presented and some examples are given of what can be achieved with it. (author)

Cyclic softening in annealed Zircaloy-2: Role of edge dislocation dipoles and vacancies

Science.gov (United States)

Sudhakar Rao, G.; Singh, S. R.; Krsjak, Vladimir; Singh, Vakil

2018-04-01

The mechanism of cyclic softening in annealed Zircaloy-2 at low strain amplitudes under strain controlled fatigue at room temperature is rationalized. The unusual softening due to continuous decrease in the phenomenological friction stress is found to be associated with decrease in the resistance against movement of dislocations because of the formation and easy glide of pure edge dislocation dipoles and consequent decrease in friction stress from reduction in the shear modulus. Positron annihilation spectroscopy data strongly support the increase in edge dislocation density containing jogs, from increased positron trapping and increase in annihilation lifetime.

Assessment of geometrically necessary dislocation levels derived by 3D EBSD

International Nuclear Information System (INIS)

Konijnenberg, P.J.; Zaefferer, S.; Raabe, D.

2015-01-01

Existing alternatives for the calculation of geometrically necessary dislocation (GND) densities from orientation fields are discussed. Importantly, we highlight the role of reference frames and consider different sources of error. A well-controlled micro cantilever bending experiment on a copper bicrystal has been analyzed by 3-dimensional electron back scatter diffraction (3D EBSD). The GND density is determined experimentally by two different approaches and assessed theoretically, assuming a homogeneous bending of the cantilever. Experiment and theory agree very well. It is further shown that the deformation is accommodated mainly by GNDs, which carry and store lattice rotation, and not (only) by mobile dislocations that leave a crystal portion inspected, without lattice rotations. A detailed GND analysis reveals a local density minimum close to the grain boundary and a distinct difference in edge to screw ratios for both grains

Contributions to Internal Stress from Free Dislocations and from Substructure Boundaries in Dislocation Structure Formed in High Temperature Creep

Czech Academy of Sciences Publication Activity Database

Orlová, Alena; Dobeš, Ferdinand

2008-01-01

Roč. 567-568, - (2008), s. 173-176 ISSN 0255-5476. [MSMF /5./. Brno, 27.06.2007-29.06.2007] R&D Projects: GA AV ČR 1QS200410502 Institutional research plan: CEZ:AV0Z20410507 Keywords : creep * internal stress * subgrain * dislocation density Subject RIV: BM - Solid Matter Physics ; Magnetism

Electrical properties of dislocations in III-Nitrides

Energy Technology Data Exchange (ETDEWEB)

Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A. [Physics and Astronomy Dept. University of Bologna, Italy viale C Berti Pichat 6/II, Bologna (Italy)

2014-02-21

Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

Electrical properties of dislocations in III-Nitrides

Science.gov (United States)

Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

2014-02-01

Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

Threaded Cognition: An Integrated Theory of Concurrent Multitasking

Science.gov (United States)

Salvucci, Dario D.; Taatgen, Niels A.

2008-01-01

The authors propose the idea of threaded cognition, an integrated theory of concurrent multitasking--that is, performing 2 or more tasks at once. Threaded cognition posits that streams of thought can be represented as threads of processing coordinated by a serial procedural resource and executed across other available resources (e.g., perceptual…

Perilunate Dislocation

Directory of Open Access Journals (Sweden)

John Jiao

2016-09-01

Full Text Available History of present illness: A 25-year-old female presented to the emergency department with left wrist pain following a fall off a skateboard. The patient fell on her outstretched left wrist with the wrist dorsiflexed and reported immediate sharp pain to her left wrist that was worse with movement. She denied other trauma. Significant findings: In the left lateral wrist x-ray, the lunate (outlined in blue is dislocated from the rest of the wrist bones (yellow line but still articulates with the radius (red line. The capitate (yellow line does not sit within the distal articulation of the lunate and is displaced dorsally. Additionally, a line drawn through the radius and lunate (green line fails to intersect with the capitate. This is consistent with a perilunate dislocation. This is compared to a lunate dislocation, where the lunate itself is displaced and turned ventrally (spilled teacup and the proximal aspect does not articulate with the radius. Discussion: A perilunate dislocation is a significant closed wrist injury that is easily missed on standard anterior-posterior imaging. These dislocations are relatively rare, involving only 7% of all carpal injuries and are associated with high-energy trauma onto a hyperextended wrist, such as falls from a height, motor vehicle accidents, and sports injuries.1 An untreated perilunate dislocation is associated with high risk of chronic carpal instability and post-traumatic arthritis. If the mechanism of injury is sufficient to suspect perilunate dislocation, multiple radiographic views of the wrist should be ordered. Patients should receive prompt orthopedic consultation for open reduction and ligamentous repair. Even after successful identification and subsequent surgical repair, median nerve neuropathy and post-traumatic arthritis are frequent.2-3

Inhomogeneous dislocation structure in fatigued INCONEL 713 LC superalloy at room and elevated temperatures

International Nuclear Information System (INIS)

Petrenec, Martin; Obrtlik, Karel; Polak, Jaroslav

2005-01-01

The dislocations arrangement was studied using transmission electron microscopy in specimens of polycrystalline INCONEL 713 LC superalloy cyclically strained up to failure with constant total strain amplitudes at temperatures 300, 773, 973 and 1073 K. Planar dislocation arrangements in the form of bands parallel to the {1 1 1} planes were observed in specimens cycled at all the temperatures. The bands showed up as thin slabs of high dislocation density cutting both the γ channels and γ' precipitates. Ladder-like bands were observed at room temperature

Partitioning of water between point defects, dislocations, and grain boundaries in olivine

Science.gov (United States)

Tielke, J. A.; Mecklenburgh, J.; Mariani, E.; Wheeler, J.

2017-12-01

Estimates of the storage capacity of water in the interior of the Earth and other terrestrial planets vary significantly. One interpretation is that water in planetary interiors exists primarily as hydrogen ions, dissociated from liquid water, that are associated with point defects in the crystal structure of nominally anhydrous minerals. However, dislocations and grain boundaries may contribute significantly to the storage capacity of water in planetary interiors, but hydrogen concentrations in dislocations and grain boundaries are difficult to quantify. To measure the water storage capacity of dislocations and grain boundaries, we are analyzing results from high-temperature and high-pressure experiments where deuterium, a stable isotope of hydrogen, was incorporated into olivine, the dominate phase in the upper mantle. Compared to hydrogen, deuterium concentrations can be determined at much higher spatial resolution using secondary-ion mass spectroscopy. The concentration of deuterium in the samples will also be quantified using Fourier transform infrared spectroscopy for comparison to results for hydrogen-bearing olivine. The spatial distribution of regions with different densities of geometrically-necessary dislocations and the locations of grain boundaries will be determined using electron-backscatter diffraction (EBSD) analyses. Correlation of the concentration of deuterium with dislocation densities and grain boundaries will be used to examine the partitioning of water-derived species between the different types of defects. Ultimately, these data will be used to place more realistic bounds on the storage capacity of water in the interior of Earth and of other terrestrial planets.

Effect of deep dislocation levels in silicon on the properties of p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

1988-07-01

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Dislocations and radiation damage in {alpha}-uranium; Dislocations et effets des radiations dans l'uranium {alpha}

Energy Technology Data Exchange (ETDEWEB)

Leteurtre, J [Commissariat a l' Energie Atomique, 92 - Fontenay-Aux-Roses (France). Centre d' Etudes Nucleaires

1968-07-01

Dislocations in {alpha}-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in {alpha}-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [French] Ce travail est une etude par microscopie electronique des dislocations induites dans l'uranium {alpha}, soit par deformation plastique, soit par irradiation. Une methode de preparation des lames minces a basse temperature (-110 deg. C) a ete mise au point. Les vecteurs de Burgers des diverses dislocations de macles de ce metal ont ete definis. Les interactions glissements- maclages sont etudiees experimentalement et theoriquement. Des echantillons irradies a divers taux de combustion ont ete examines. Pour expliquer nos resultats micrographiques, et aussi l'ensemble des informations recueillies dans la litterature concernant l'endommagement par irradiation de l'uranium-{alpha}, nous proposons un modele coherent de l'effet des fragments de fission dans ce metal. L'influence des parametres: temperature, densite de dislocations, impuretes est analysee. Le nombre de defauts ponctuels crees par une fission dans du metal

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Science.gov (United States)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Directory of Open Access Journals (Sweden)

Siming Chen

2015-06-01

Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

Canonical Quantization of Crystal Dislocation and Electron-Dislocation Scattering in an Isotropic Media

Science.gov (United States)

Li, Mingda; Cui, Wenping; Dresselhaus, M. S.; Chen, Gang; MIT Team; Boston College Team

Crystal dislocations govern the plastic mechanical properties of materials but also affect the electrical and optical properties. However, a fundamental and decent quantum-mechanical theory of dislocation remains undiscovered for decades. Here we present an exact and manageable Hamiltonian theory for both edge and screw dislocation line in an isotropic media, where the effective Hamiltonian of a single dislocation line can be written in a harmonic-oscillator-like form, with closed-form quantized 1D phonon-like excitation. Moreover a closed-form, position dependent electron-dislocation coupling strength is obtained, from which we obtained good agreement of relaxation time when comparing with classical results. This Hamiltonian provides a platform to study the effect of dislocation to materials' non-mechanical properties from a fundamental Hamiltonian level.

"Conjugate channeling" effect in dislocation core diffusion: carbon transport in dislocated BCC iron.

Science.gov (United States)

Ishii, Akio; Li, Ju; Ogata, Shigenobu

2013-01-01

Dislocation pipe diffusion seems to be a well-established phenomenon. Here we demonstrate an unexpected effect, that the migration of interstitials such as carbon in iron may be accelerated not in the dislocation line direction ξ, but in a conjugate diffusion direction. This accelerated random walk arises from a simple crystallographic channeling effect. c is a function of the Burgers vector b, but not ξ, thus a dislocation loop possesses the same everywhere. Using molecular dynamics and accelerated dynamics simulations, we further show that such dislocation-core-coupled carbon diffusion in iron has temperature-dependent activation enthalpy like a fragile glass. The 71° mixed dislocation is the only case in which we see straightforward pipe diffusion that does not depend on dislocation mobility.

Distribution of distances between dislocations in different types of dislocation substructures in deformed Cu-Al alloys

Energy Technology Data Exchange (ETDEWEB)

Trishkina, L., E-mail: trishkina.53@mail.ru; Zboykova, N.; Koneva, N., E-mail: koneva@tsuab.ru; Kozlov, E. [Tomsk State University of Architecture and Building, 2 Solyanaya St., Tomsk, 634003 (Russian Federation); Cherkasova, T. [Tomsk State University of Architecture and Building, 2 Solyanaya St., Tomsk, 634003 (Russian Federation); National Research Tomsk Polytechnic University, 50 Lenin Ave., Tomsk, 634050 (Russian Federation)

2016-01-15

The aim of the investigation was the determination of the statistic description of dislocation distribution in each dislocation substructures component forming after different deformation degrees in the Cu-Al alloys. The dislocation structures were investigated by the transmission diffraction electron microscopy method. In the work the statistic description of distance distribution between the dislocations, dislocation barriers and dislocation tangles in the deformed Cu-Al alloys with different concentration of Al and test temperature at the grain size of 100 µm was carried out. It was established that the above parameters influence the dislocation distribution in different types of the dislocation substructures (DSS): dislocation chaos, dislocation networks without disorientation, nondisoriented and disoriented cells, in the walls and inside the cells. The distributions of the distances between dislocations in the investigated alloys for each DSS type formed at certain deformation degrees and various test temperatures were plotted.

Distribution of distances between dislocations in different types of dislocation substructures in deformed Cu-Al alloys

Science.gov (United States)

Trishkina, L.; Cherkasova, T.; Zboykova, N.; Koneva, N.; Kozlov, E.

2016-01-01

The aim of the investigation was the determination of the statistic description of dislocation distribution in each dislocation substructures component forming after different deformation degrees in the Cu-Al alloys. The dislocation structures were investigated by the transmission diffraction electron microscopy method. In the work the statistic description of distance distribution between the dislocations, dislocation barriers and dislocation tangles in the deformed Cu-Al alloys with different concentration of Al and test temperature at the grain size of 100 µm was carried out. It was established that the above parameters influence the dislocation distribution in different types of the dislocation substructures (DSS): dislocation chaos, dislocation networks without disorientation, nondisoriented and disoriented cells, in the walls and inside the cells. The distributions of the distances between dislocations in the investigated alloys for each DSS type formed at certain deformation degrees and various test temperatures were plotted.

Plasma density control in real-time on the COMPASS tokamak

Energy Technology Data Exchange (ETDEWEB)

Janky, F., E-mail: filip.janky.work@gmail.com [Institute of Plasma Physics AS CR, v.v.i., Association EURATOM/IPP.CR, Za Slovankou 3, 182 00 Praha 8 (Czech Republic); Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, 180 00 Praha 8 (Czech Republic); Hron, M. [Institute of Plasma Physics AS CR, v.v.i., Association EURATOM/IPP.CR, Za Slovankou 3, 182 00 Praha 8 (Czech Republic); Havlicek, J. [Institute of Plasma Physics AS CR, v.v.i., Association EURATOM/IPP.CR, Za Slovankou 3, 182 00 Praha 8 (Czech Republic); Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, 180 00 Praha 8 (Czech Republic); Varavin, M.; Zacek, F.; Seidl, J.; Panek, R. [Institute of Plasma Physics AS CR, v.v.i., Association EURATOM/IPP.CR, Za Slovankou 3, 182 00 Praha 8 (Czech Republic)

2015-10-15

Highlights: • We fitted length of the chord of the interferometry crossing plasma in the different plasma scenarios. • We add correction to the actual length of the chord of the interferometry according to plasma shape and position in real-time code. • We used this correction to control plasma density in real-time. - Abstract: The electron density on COMPASS is measured using 2 mm microwave interferometer. Interferometer signal is used as an input for the feedback control loop, running under the MARTe real-time framework. Two different threads are used to calculate (fast 50 μs thread) and to control (slow 500 μs thread) the electron density. The interferometer measures a line averaged density along a measurement chord. This paper describes an approach to control the line-averaged electron density in a real-time loop, using a correction to the real plasma shape, the plasma position, and non-linear effects of the electron density measurement at high densities. Newly developed real-time electron density control give COMPASS the chance to control the electron density more accurately which is essential for parametric scans for diagnosticians, for physics experiments and also for achieving plasma scenarios with H-mode.

Tailoring Superconductivity with Quantum Dislocations.

Science.gov (United States)

Li, Mingda; Song, Qichen; Liu, Te-Huan; Meroueh, Laureen; Mahan, Gerald D; Dresselhaus, Mildred S; Chen, Gang

2017-08-09

Despite the established knowledge that crystal dislocations can affect a material's superconducting properties, the exact mechanism of the electron-dislocation interaction in a dislocated superconductor has long been missing. Being a type of defect, dislocations are expected to decrease a material's superconducting transition temperature (T c ) by breaking the coherence. Yet experimentally, even in isotropic type I superconductors, dislocations can either decrease, increase, or have little influence on T c . These experimental findings have yet to be understood. Although the anisotropic pairing in dirty superconductors has explained impurity-induced T c reduction, no quantitative agreement has been reached in the case a dislocation given its complexity. In this study, by generalizing the one-dimensional quantized dislocation field to three dimensions, we reveal that there are indeed two distinct types of electron-dislocation interactions. Besides the usual electron-dislocation potential scattering, there is another interaction driving an effective attraction between electrons that is caused by dislons, which are quantized modes of a dislocation. The role of dislocations to superconductivity is thus clarified as the competition between the classical and quantum effects, showing excellent agreement with existing experimental data. In particular, the existence of both classical and quantum effects provides a plausible explanation for the illusive origin of dislocation-induced superconductivity in semiconducting PbS/PbTe superlattice nanostructures. A quantitative criterion has been derived, in which a dislocated superconductor with low elastic moduli and small electron effective mass and in a confined environment is inclined to enhance T c . This provides a new pathway for engineering a material's superconducting properties by using dislocations as an additional degree of freedom.

Thread-Skip: An Undefined Common Observation.

Science.gov (United States)

McDermott, Peter; Allan, William DE

When a screw-retained implant prosthesis is removed, a click is heard and a slight axial shift is felt, indicating the screw has been fully removed from the retaining thread. This common observation has never been described in the literature. This article describes the click, and it is proposed it be termed thread-skip.

Slip-band formation and dislocation kinetics in the stage I deformation of neutron-irradiated copper single crystals

International Nuclear Information System (INIS)

Kitajima, Sadakichi; Shinohara, Kazutoshi; Kutsuwada, Masanori

1995-01-01

The velocity of edge and screw dislocations moving in primary slip bands and the formation rate of primary slip bands were measured in stage I deformation of neutron-irradiated copper single crystals at different strain rates at room temperature using micro-cinematography and optical micrography. The average velocity of edge dislocations was larger at least by one order than that of screw ones, and that of screw dislocations did not depend so strongly on strain rate. The formation rate of primary slip bands was proportional to strain rate. From these results, it is concluded that (1) jogs produced on moving dislocations by cutting dislocation loops result in the difference in velocity between edge and screw dislocations and (2) the change in the density of mobile dislocations as well as velocity of dislocations is responsible for the change of plastic strain rate of a crystal. (author)

CPC: programming with a massive number of lightweight threads

OpenAIRE

Kerneis, Gabriel; Chroboczek, Juliusz

2011-01-01

To appear in PLACES'11.; International audience; Threads are a convenient and modular abstraction for writing concurrent programs, but often fairly expensive. The standard alternative to threads, event-loop programming, allows much lighter units of concurrency, but leads to code that is difficult to write and even harder to understand. Continuation Passing C (CPC) is a translator that converts a program written in threaded style into a program written with events and native system threads, at...

Outcomes of polydioxanone knotless thread lifting for facial rejuvenation.

Science.gov (United States)

Suh, Dong Hye; Jang, Hee Won; Lee, Sang Jun; Lee, Won Seok; Ryu, Hwa Jung

2015-06-01

Thread lifting is a minimally invasive technique for facial rejuvenation. Various devices for thread lifting using polydioxanone (PDO) are popular in aesthetic clinics in Korea, but there have been a few studies regarding its use. To describe PDO thread and techniques adopted to counteract the descent and laxity of the face. A retrospective chart review was conducted over a 24-month period. A total of 31 thread lifting procedures were performed. On each side, 5 bidirectional cog threads were used in the procedure for the flabby skin of the nasolabial folds. And, the procedure was performed on the marionette line using 2 twin threads. In most patients (87%), the results obtained were considered satisfactory. Consensus ratings by 2 physicians found that objective outcomes were divided among "excellent," "good," "fair," and "poor." Texture wise, the outcome ratings were 13 as excellent and 9 as good. Lifting wise, ratings were 11 as excellent and 6 as good. The incidence of complications was low and not serious. Facial rejuvenation using PDO thread is a safe and effective procedure associated with only minor complications when performed on patients with modest face sagging, fine wrinkles, and marked facial pores.

Double-Twisted Conductive Smart Threads Comprising a Homogeneously and a Gradient-Coated Thread for Multidimensional Flexible Pressure-Sensing Devices

KAUST Repository

Tai, Yanlong

2016-03-17

Fiber-based, flexible pressure-sensing systems have attracted attention recently due to their promising application as electronic skins. Here, a new kind of flexible pressure-sensing device based on a polydimethylsiloxane membrane instrumented with double-twisted smart threads (DTSTs) is reported. DTSTs are made of two conductive threads obtained by coating cotton threads with carbon nanotubes. One thread is coated with a homogeneous thickness of single-walled carbon nanotubes (SWCNTs) to detect the intensity of an applied load and the other is coated with a graded thickness of SWCNTs to identify the position of the load along the thread. The mechanism and capacity of DTSTs to accurately sense an applied load are systematically analyzed. Results demonstrate that the fabricated 1D, 2D, and 3D sensing devices can be used to predict both the intensity and the position of an applied load. The sensors feature high sensitivity (between ≈0.1% and 1.56% kPa) and tunable resolution, good cycling resilience (>104 cycles), and a short response time (minimum 2.5 Hz). The presented strategy is a viable alternative for the design of simple, low-cost pressure sensors.

Reply to 'Comment on 'Interaction of a surface wave with a dislocation''

International Nuclear Information System (INIS)

Maurel, Agnes; Pagneux, Vincent; Barra, Felipe; Lund, Fernando

2009-01-01

A subsurface moving dislocation in an elastic half space generates vertical displacements at the free surface. We compare this displacement for two different values of the dislocation viscous drag coefficient. The different resulting surface patterns suggest the free surface plays a decisive dynamical effect. We thus compare this displacement, using the dynamic Green function for an elastic half space, with the result of the calculation using the static Green function for an infinite space, as in the work of Zolotoyabko and Shilo [preceding paper, Phys. Rev. B 80, 136101 (2009), and Shilo and Zolotoyabko, Phys. Rev. Lett. 91, 115506 (2003)] when the dislocation dynamics is the same. Considering the static Green function of an infinite space instead of the correct dynamic Green function of the half space leads to an underestimation of the resulting displacement at the free surface by a factor up to 50 for dislocation depths smaller than one Rayleigh wavelength λ R . We also discuss the constraints that recent ultrasound attenuation and resonant ultrasound spectroscopy experiments place on dislocation parameters, such as density and viscous drag coefficient.

Auger recombination as the dominant nonradiative recombination channel in InN

NARCIS (Netherlands)

Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

2013-01-01

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

Visual thread quality for precision miniature mechanisms

Energy Technology Data Exchange (ETDEWEB)

Gillespie, L.K.

1981-04-01

Threaded features have eight visual appearance factors which can affect their function in precision miniature mechanisms. The Bendix practice in deburring, finishing, and accepting these conditions on miniature threads is described as is their impact in assemblies of precision miniature electromechanical assemblies.

A multi-threading approach to secure VERIFYPIN

CSIR Research Space (South Africa)

Frieslaar, Ibraheem

2016-10-01

Full Text Available along side a pin-acceptance program in a multi-threaded environment. These threads are inserted randomly on each execution of the program to create confusion for the attacker. Moreover, the research proposes a more improved version of the pin...

Dislocation Dynamics During Plastic Deformation

CERN Document Server

Messerschmidt, Ulrich

2010-01-01

The book gives an overview of the dynamic behavior of dislocations and its relation to plastic deformation. It introduces the general properties of dislocations and treats the dislocation dynamics in some detail. Finally, examples are described of the processes in different classes of materials, i.e. semiconductors, ceramics, metals, intermetallic materials, and quasicrystals. The processes are illustrated by many electron micrographs of dislocations under stress and by video clips taken during in situ straining experiments in a high-voltage electron microscope showing moving dislocations. Thus, the users of the book also obtain an immediate impression and understanding of dislocation dynamics.

Dislocations and radiation damage in {alpha}-uranium; Dislocations et effets des radiations dans l'uranium {alpha}

Energy Technology Data Exchange (ETDEWEB)

Leteurtre, J. [Commissariat a l' Energie Atomique, 92 - Fontenay-Aux-Roses (France). Centre d' Etudes Nucleaires

1968-07-01

Dislocations in {alpha}-uranium were studied by electron microscopy. Electropolishing of thin foils was performed at low temperature (-110 deg. C) to prevent oxidation. Burgers vectors of twins dislocations are defined. Interactions between slip and twinning are studied from both experimental and theoretical point of view. Samples irradiated at several burn-up were examined. In order to explain our micrographic results, and also all information gathered in literature about radiation damage in {alpha}-uranium, a coherent model is propound for the fission particles effects. We analyse the influences of parameters: temperature, dislocation density, impurity content. The number of point defects created by one initial fission is determined for pure and annealed metal. The importance of the self-anneal which occurs immediately in each displacement spike, and the anneal due to a new fission on the damage resulting from a previous fission, are estimated. The focussing distance in [100] direction is found to be about 1000 Angstrom, at 4 deg. K. (author) [French] Ce travail est une etude par microscopie electronique des dislocations induites dans l'uranium {alpha}, soit par deformation plastique, soit par irradiation. Une methode de preparation des lames minces a basse temperature (-110 deg. C) a ete mise au point. Les vecteurs de Burgers des diverses dislocations de macles de ce metal ont ete definis. Les interactions glissements- maclages sont etudiees experimentalement et theoriquement. Des echantillons irradies a divers taux de combustion ont ete examines. Pour expliquer nos resultats micrographiques, et aussi l'ensemble des informations recueillies dans la litterature concernant l'endommagement par irradiation de l'uranium-{alpha}, nous proposons un modele coherent de l'effet des fragments de fission dans ce metal. L'influence des parametres: temperature, densite de dislocations, impuretes est analysee. Le nombre de defauts ponctuels crees

Radiometric determination of uniformity of putting paraffin on textile threads

International Nuclear Information System (INIS)

Ridel', Z.; Kherrmann, Eh.; Shefer, I.; Tseiner, A.

1979-01-01

To improve processing of the natural and synthetic fiber threads on stocking-frames, they are treated by paraffin. Paraffin is applied in the amounts nearly equal to 0.1 -1.0 g for 10 4 m of the thread's length. To determine amount of paraffin on thread and to determine uniformity if its application, a radiometric method has been developed. As a radioactive label, didocilephosphate of rare earths was used. This compound has good solubility in hydrocarbons and does not change physical properties of paraffin in the investigated field of its application as well as its concentration. It is possible to add to paraffin this radioactive label or a non-active label with subsequent its activation. Amount of paraffin, applied on a thread is determined by means of measurement of activity of thread samples of different length. Information about uniformity of paraffin application on thread have been obtained by means of autoradiography. It has been found that paraffin in mainly applied on the thread's bulges [ru

Trans-triquetral Perilunate fracture dislocation

OpenAIRE

John-Henry Rhind; Abhinav Gulihar; Andrew Smith

2018-01-01

Perilunate dislocations and perilunate fracture dislocations are rare and serious injuries. Perilunate dislocations represent less than 10% of all carpal injuries of which 61% represent transcaphoid fractures. Because of their rarity, up to 25% of perilunate dislocations are initially missed on first assessment. We present the case of a 66-year-old-gentleman who sustained an isolated trans-triquetral perilunate fracture dislocation while walking his dog. This was diagnosed in the emergency de...

Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect

Science.gov (United States)

Barabash, R. I.; Ice, G. E.; Tamura, N.; Valek, B. C.; Bravman, J. C.; Spolenak, R.; Patel, J. R.

2003-05-01

Electromigration during accelerated testing can induce plastic deformation in apparently undamaged Al interconnect lines as recently revealed by white beam scanning x-ray microdiffraction. In the present article, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking during the early stages of electromigration. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined. The origin of the observed plastic deformation is considered in view of the constraints for dislocation arrangements under the applied electric field during electromigration.

Carbon Nanotube Thread Electrochemical Cell: Detection of Heavy Metals.

Science.gov (United States)

Zhao, Daoli; Siebold, David; Alvarez, Noe T; Shanov, Vesselin N; Heineman, William R

2017-09-19

In this work, all three electrodes in an electrochemical cell were fabricated based on carbon nanotube (CNT) thread. CNT thread partially insulated with a thin polystyrene coating to define the microelectrode area was used as the working electrode; bare CNT thread was used as the auxiliary electrode; and a micro quasi-reference electrode was fabricated by electroplating CNT thread with Ag and then anodizing it in chloride solution to form a layer of AgCl. The Ag|AgCl coated CNT thread electrode provided a stable potential comparable to the conventional liquid-junction type Ag|AgCl reference electrode. The CNT thread auxiliary electrode provided a stable current, which is comparable to a Pt wire auxiliary electrode. This all-CNT thread three electrode cell has been evaluated as a microsensor for the simultaneous determination of trace levels of heavy metal ions by anodic stripping voltammetry (ASV). Hg 2+ , Cu 2+ , and Pb 2+ were used as a representative system for this study. The calculated detection limits (based on the 3σ method) with a 120 s deposition time are 1.05, 0.53, and 0.57 nM for Hg 2+ , Cu 2+ , and Pb 2+ , respectively. These electrodes significantly reduce the dimensions of the conventional three electrode electrochemical cell to the microscale.

DISLOCATIONS STRUCTURE AND SCATTERING PHENOMENON IN CRYSTALLINE CELL SIZE OF 2024 AL ALLOY DEFORMED BY ONE PASS OF ECAP AT ROOM TEMPERATURE

Directory of Open Access Journals (Sweden)

M. H. Goodarzy

2014-03-01

Full Text Available Variation in microstructural features of 2024 aluminum alloy plastically deformed by equal channel angular pressing (ECAP at room temperature, was investigated by X-Ray diffraction in this work. These include dislocation density dislocation characteristic and the cell size of crystalline domains. Dislocations contrast factor was calculated using elastic constants of the alloy such as C 11, C 22 and C 44 . The effect of dislocations contrast factor on the anisotropic strain broadening of diffraction profiles was considered for measuring the microstructural features on the base of the modified Williamson-Hall and Warren-Averbach methods. Results showed that the dislocations density of the solution annealed sample increased from 4.28×10 12m-2 to 2.41×10 14m-2 after one pass of cold ECAP and the fraction of edge dislocations in the solution annealed sample increased from 43% to 74% after deformation. This means that deformation changed the overall dislocations characteristic more to edge dislocations. Also the crystalline cell size of the solution annealed sample decreased from 0.83μm to about 210nm after one pass of ECAP process at room temperature

A Multi-threaded Version of Field II

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt

2014-01-01

A multi-threaded version of Field II has been developed, which automatically can use the multi-core capabil- ities of modern CPUs. The memory allocation routines were rewritten to minimize the number of dynamic allocations and to make pre-allocations possible for each thread. This ensures...... that the simulation job can be automatically partitioned and the interdependence between threads minimized. The new code has been compared to Field II version 3.22, October 27, 2013 (latest free-ware version). A 64 element 5 MHz focused array transducer was simulated. One million point scatterers randomly distributed...... in a plane of 20 x 50 mm (width x depth) with random Gaussian amplitudes were simulated using the command calc scat . Dual Intel Xeon CPU E5-2630 2.60 GHz CPUs were used under Ubuntu Linux 10.02 and Matlab version 2013b. Each CPU holds 6 cores with hyper-threading, corresponding to a total of 24 hyper...

Multi-threaded software framework development for the ATLAS experiment

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00226135; Baines, John; Bold, Tomasz; Calafiura, Paolo; Dotti, Andrea; Farrell, Steven; Leggett, Charles; Malon, David; Ritsch, Elmar; Snyder, Scott; Tsulaia, Vakhtang; van Gemmeren, Peter; Wynne, Benjamin

2016-01-01

ATLAS's current software framework, Gaudi/Athena, has been very successful for the experiment in LHC Runs 1 and 2. However, its single threaded design has been recognised for some time to be increasingly problematic as CPUs have increased core counts and decreased available memory per core. Even the multi-process version of Athena, AthenaMP, will not scale to the range of architectures we expect to use beyond Run2. ATLAS examined the requirements on an updated multi-threaded framework and laid out plans for a new framework, including better support for high level trigger (HLT) use cases, in 2014. In this paper we report on our progress in developing the new multi-threaded task parallel extension of Athena, AthenaMT. Implementing AthenaMT has required many significant code changes. Progress has been made in updating key concepts of the framework, to allow the incorporation of different levels of thread safety in algorithmic code (from un-migrated thread-unsafe code, to thread safe copyable code to reentrant co...

Multi-threaded Software Framework Development for the ATLAS Experiment

CERN Document Server

Stewart, Graeme; The ATLAS collaboration; Baines, John; Calafiura, Paolo; Dotti, Andrea; Farrell, Steven; Leggett, Charles; Malon, David; Ritsch, Elmar; Snyder, Scott; Tsulaia, Vakhtang; van Gemmeren, Peter; Wynne, Benjamin

2016-01-01

ATLAS's current software framework, Gaudi/Athena, has been very successful for the experiment in LHC Runs 1 and 2. However, its single threaded design has been recognised for some time to be increasingly problematic as CPUs have increased core counts and decreased available memory per core. Even the multi-process version of Athena, AthenaMP, will not scale to the range of architectures we expect to use beyond Run2. ATLAS examined the requirements on an updated multi-threaded framework and layed out plans for a new framework, including better support for high level trigger (HLT) use cases, in 2014. In this paper we report on our progress in developing the new multi-threaded task parallel extension of Athena, AthenaMT. Implementing AthenaMT has required many significant code changes. Progress has been made in updating key concepts of the framework, to allow the incorporation of different levels of thread safety in algorithmic code (from un-migrated thread-unsafe code, to thread safe copyable code to reentrant c...

The Role of Geometrically Necessary Dislocations in Cantilever Beam Bending Experiments of Single Crystals

Directory of Open Access Journals (Sweden)

Edgar Husser

2017-03-01

Full Text Available The mechanical behavior of single crystalline, micro-sized copper is investigated in the context of cantilever beam bending experiments. Particular focus is on the role of geometrically necessary dislocations (GNDs during bending-dominated load conditions and their impact on the characteristic bending size effect. Three different sample sizes are considered in this work with main variation in thickness. A gradient extended crystal plasticity model is presented and applied in a three-dimensional finite-element (FE framework considering slip system-based edge and screw components of the dislocation density vector. The underlying mathematical model contains non-standard evolution equations for GNDs, crystal-specific interaction relations, and higher-order boundary conditions. Moreover, two element formulations are examined and compared with respect to size-independent as well as size-dependent bending behavior. The first formulation is based on a linear interpolation of the displacement and the GND density field together with a full integration scheme whereas the second is based on a mixed interpolation scheme. While the GND density fields are treated equivalently, the displacement field is interpolated quadratically in combination with a reduced integration scheme. Computational results indicate that GND storage in small cantilever beams strongly influences the evolution of statistically stored dislocations (SSDs and, hence, the distribution of the total dislocation density. As a particular example, the mechanical bending behavior in the case of a physically motivated limitation of GND storage is studied. The resulting impact on the mechanical bending response as well as on the predicted size effect is analyzed. Obtained results are discussed and related to experimental findings from the literature.

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan

2018-04-03

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

2018-01-01

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

PREFERED SURGICAL TECHNIQUE USED BY ORTHOPEDISTS IN ACUTE ACROMIOCLAVICULAR DISLOCATION

Science.gov (United States)

NISHIMI, ALEXANDRE YUKIO; ARBEX, DEMETRIO SIMÃO; MARTINS, DIOGO LUCAS CAMPOS; GUSMÃO, CARLOS VINICIUS BUARQUE DE; BONGIOVANNI, ROBERTO RANGEL; PASCARELLI, LUCIANO

2016-01-01

ABSTRACT Objective: To determine whether training on shoulder and elbow surgery influences the orthopedist surgeons' preferred technique to address acute acromioclavicular joint dislocation (ACD). Methods: A survey was conducted with shoulder and elbow specialists and general orthopedists on their preferred technique to address acute ACD. Results: Thirty specialists and forty-five general orthopedists joined the study. Most specialists preferred the endobutton technique, while most general orthopedists preferred the modified Phemister procedure for coracoclavicular ligament repair using anchors. We found no difference between specialists and general orthopedists in the number of tunnels used to repair the coracoclavicular ligament; preferred method for wire insertion through the clavicular tunnels; buried versus unburied Kirschner wire insertion for acromioclavicular temporary fixation; and time for its removal; and regarding the suture thread used for deltotrapezoidal fascia closure. Conclusion: Training on shoulder and elbow surgery influences the surgeons' preferred technique to address acute ACD. Level of Evidence V, Expert Opinion. PMID:28149190

Thread selection according to predefined power characteristics during context switching on compute nodes

Science.gov (United States)

None, None

2013-06-04

Methods, apparatus, and products are disclosed for thread selection during context switching on a plurality of compute nodes that includes: executing, by a compute node, an application using a plurality of threads of execution, including executing one or more of the threads of execution; selecting, by the compute node from a plurality of available threads of execution for the application, a next thread of execution in dependence upon power characteristics for each of the available threads; determining, by the compute node, whether criteria for a thread context switch are satisfied; and performing, by the compute node, the thread context switch if the criteria for a thread context switch are satisfied, including executing the next thread of execution.

Nuclear reactor incorporating locking device for threaded bolt connections

International Nuclear Information System (INIS)

Blaushild, R.M.

1987-01-01

A nuclear reactor having a pressure vessel and a first element is described comprising a core barrel situated within the pressure vessel. The core barrel has a baffle former secured in and to the core barrel by bolted connections, and a second element comprising baffle plates secured to the inner surface of the baffle former by bolted connections, with a locking device to prevent loosening of bolted connections between the baffle former and at least one of the elements. The baffle former and at least one element are held together by a headed, threaded bolt engaged in a bore coaxially extending in the baffle former and at least one element and threadedly engaged in a threaded section in at least the baffle former. The threaded section has first threaded of a first direction, with the head of the bolt engaged with a shoulder about the bore in at least one element to hold the baffle formed and at least one element together, the head of the bolt having a first diameter and a cavity, having an unsymmetrical wall thereabout, in the end surface thereof. It comprises a recess in at least one element coaxial with the bore forming a wall thereabout and extending inwardly from the outer surface of at least one element, the recess having a second diameter greater than the first diameter, with at least one element having second threads in the wall of a direction opposite the direction of the first threads of the threaded bore; a locking nut having a base with a downwardly depending cylindrical wall thereabout

Self-cleaning threaded rod spinneret for high-efficiency needleless electrospinning

Science.gov (United States)

Zheng, Gaofeng; Jiang, Jiaxin; Wang, Xiang; Li, Wenwang; Zhong, Weizheng; Guo, Shumin

2018-07-01

High-efficiency production of nanofibers is the key to the application of electrospinning technology. This work focuses on multi-jet electrospinning, in which a threaded rod electrode is utilized as the needless spinneret to achieve high-efficiency production of nanofibers. A slipper block, which fits into and moves through the threaded rod, is designed to transfer polymer solution evenly to the surface of the rod spinneret. The relative motion between the slipper block and the threaded rod electrode promotes the instable fluctuation of the solution surface, thus the rotation of threaded rod electrode decreases the critical voltage for the initial multi-jet ejection and the diameter of nanofibers. The residual solution on the surface of threaded rod is cleaned up by the moving slipper block, showing a great self-cleaning ability, which ensures the stable multi-jet ejection and increases the productivity of nanofibers. Each thread of the threaded rod electrode serves as an independent spinneret, which enhances the electric field strength and constrains the position of the Taylor cone, resulting in high productivity of uniform nanofibers. The diameter of nanofibers decreases with the increase of threaded rod rotation speed, and the productivity increases with the solution flow rate. The rotation of electrode provides an excess force for the ejection of charged jets, which also contributes to the high-efficiency production of nanofibers. The maximum productivity of nanofibers from the threaded rod spinneret is 5-6 g/h, about 250-300 times as high as that from the single-needle spinneret. The self-cleaning threaded rod spinneret is an effective way to realize continuous multi-jet electrospinning, which promotes industrial applications of uniform nanofibrous membrane.

Frenkel defect absorption on dislocations and dislocation discharge rate. Modeling determination of the absorption zone

International Nuclear Information System (INIS)

Mikhlin, Eh.Ya.

1988-01-01

A situation connected with the fact that evaluations of dislocation discharge strength which somehow or other are based on the elasticity theory in the dislocation nucleus or near it, do not lead to results complying with experimental data, is discussed. Bases of the alternative approach to this problem consisting in direct investigation into the process of Frenkel defect absorption on dislocation by its computerized simulation at the microscopic level are also presented. Methods of investigation and results are described using α dislocation in iron-alpha as an example. The concept of zones of vacancy and interstitial atom absorption on dislocation is discussed. It is shown that a spontaneous transition, performed by any of these defects near a dislocation is not always identical to absorption and usually appears to be only a part of a multistage process leading to the defect disappearance. Potential relief characteristics for vacancy movement near the dislocation are found. An area wide enough in a transverse direction is found around the dislocation. Vacncies reaching this area can be easily transported to places of their disappearance. Therefore the vacancy entry to this area is equivalent to the absorption. the procedure of simulating the atomic structure of a crystallite containing a dislocation with a step is described. Positions from which these defects perform spontaneous transitions, reaching the disappearance places are found on the dislocation near the step

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

2014-05-21

The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Altındal, Şemsettin; Özçelik, Süleyman

2009-01-01

The forward current–voltage–temperature characteristics of (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructures were studied in a temperature range of 80–375 K. The temperature dependences of the tunneling saturation current (I t ) and tunneling parameters (E 0 ) were obtained. Weak temperature dependence of the saturation current and the absence of temperature dependence of the tunneling parameters were observed in this temperature range. The results indicate that in the temperature range of 80–375 K, the mechanism of charge transport in the (Ni/Au)–Al 0.83 In 0.17 N/AlN/GaN heterostructure is performed by tunneling among dislocations intersecting the space-charge region. A model is used for nonuniform tunneling along these dislocations that intersect the space-charge region. The dislocation density that was calculated from the current–voltage characteristics, according to a model of tunneling along the dislocation line, gives the value 7.4 × 10 8 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements value of 5.9 × 10 8 cm −2 . These data show that the current flows manifest a tunneling character, even at room temperature

Atomic-scale details of dislocation-stacking fault tetrahedra interaction

International Nuclear Information System (INIS)

Osetsky, Yu. N.; Stoller, R.E.; Rodney, D.; Bacon, D.J.

2005-01-01

Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. Key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Science.gov (United States)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Observation and analysis of defect cluster production and interactions with dislocations

International Nuclear Information System (INIS)

Zinkle, S.J.; Matsukawa, Y.

2004-01-01

The current understanding of defect production fundamentals in neutron-irradiated face centered cubic (FCC) and body centered cubic (BCC) metals is briefly reviewed, based primarily on transmission electron microscope observations. Experimental procedures developed by Michio Kiritani and colleagues have been applied to quantify defect cluster size, density, and nature. Differences in defect accumulation behavior of irradiated BCC and FCC metals are discussed. Depending on the defect cluster obstacle strength, either the dispersed barrier hardening model or the Friedel-Kroupa-Hirsch weak barrier model can be used to describe major aspects of radiation hardening. Irradiation at low temperature can cause a change in deformation mode from dislocation cell formation at low doses to twinning or dislocation channeling at higher doses. The detailed interaction between dislocations and defect clusters helps determine the dominant deformation mode. Recent observations of the microstructure created by plastic deformation of quenched and irradiated metals are summarized, including in situ deformation results. Examples of annihilation of stacking fault tetrahedra by gliding dislocations and subsequent formation of mobile superjogs are shown

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Energy Technology Data Exchange (ETDEWEB)

Horton, M. K., E-mail: m.horton11@imperial.ac.uk [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Rhode, S. L. [Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-08-14

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

International Nuclear Information System (INIS)

Horton, M. K.; Rhode, S. L.; Moram, M. A.

2014-01-01

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12 ¯ 10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance

Thread angle dependency on flame spread shape over kenaf/polyester combined fabric

Science.gov (United States)

Azahari Razali, Mohd; Sapit, Azwan; Nizam Mohammed, Akmal; Nor Anuar Mohamad, Md; Nordin, Normayati; Sadikin, Azmahani; Faisal Hushim, Mohd; Jaat, Norrizam; Khalid, Amir

2017-09-01

Understanding flame spread behavior is crucial to Fire Safety Engineering. It is noted that the natural fiber exhibits different flame spread behavior than the one of the synthetic fiber. This different may influences the flame spread behavior over combined fabric. There is a research has been done to examined the flame spread behavior over kenaf/polyester fabric. It is seen that the flame spread shape is dependent on the thread angle dependency. However, the explanation of this phenomenon is not described in detail in that research. In this study, explanation about this phenomenon is given in detail. Results show that the flame spread shape is dependent on the position of synthetic thread. For thread angle, θ = 0°, the polyester thread is breaking when the flame approach to the thread and the kenaf thread tends to move to the breaking direction. This behavior produces flame to be ‘V’ shape. However, for thread angle, θ = 90°, the polyester thread melts while the kenaf thread decomposed and burned. At this angle, the distance between kenaf threads remains constant as flame approaches.

Closed reduction with CT-guided screw fixation for unstable sacroiliac joint fracture-dislocation

Energy Technology Data Exchange (ETDEWEB)

Baskin, Kevin M.; Cahill, Ann Marie; Kaye, Robin D. [Children' s Hospital of Philadelphia, Department of Radiology, Philadelphia, PA (United States); Born, Christopher T. [Temple University Hospital/Temple Children' s Hospital, Temple Sports Medicine, Marlton, NJ (United States); Grudziak, Jan S. [Children' s Hospital of Pittsburgh, Department of Orthopedic Surgery, Pittsburgh, PA (United States); Towbin, Richard B.

2004-12-01

Unstable posterior pelvic ring fractures and dislocations are uncommon but potentially life-threatening injuries in children. Early definitive management reduces risk of immediate complications as well as chronic pain and gait dysfunction. Conventional operative therapy carries substantial risk of extensive blood loss and iatrogenic neurological and vascular injury. Minimally invasive image-guided intervention may further reduce immediate risk and improve long-term outcome. To describe CT-guided closed reduction and internal fixation (CRIF) and review outcomes of unstable fracture-dislocation of the sacroiliac (SI) joint in children. Between 2000 and 2003, three children (two girls, one boy) age 8-14 years were referred to interventional radiology for treatment of unstable SI joint fracture-dislocation not adequately treated with anterior external fixation alone. The three affected SI joints (two left, one right) were treated in a combined approach by pediatric interventional radiologists and orthopedic surgeons, using a percutaneous approach under CT guidance. Over a threaded guiding pin, 7.3 mm cannulated screws were used to achieve stable reduction of the affected SI joints. One screw was removed after slight (2 mm) migration. No neurovascular or other complications occurred. All patients had satisfactory healing with near-anatomic reduction, although recovery of the youngest was delayed by associated spinal injury. Compared to open surgical alternatives, CRIF under CT guidance reduces operating time, decreases blood loss, and allows early definitive fixation and immediate non-weight-bearing mobilization with a low rate of complication for unstable posterior pelvic ring fractures. In addition, CT-guided placement of the guide pin may allow safer screw positioning and may minimize the total number of screws needed to achieve pelvic stability. (orig.)

Closed reduction with CT-guided screw fixation for unstable sacroiliac joint fracture-dislocation

International Nuclear Information System (INIS)

Baskin, Kevin M.; Cahill, Ann Marie; Kaye, Robin D.; Born, Christopher T.; Grudziak, Jan S.; Towbin, Richard B.

2004-01-01

Unstable posterior pelvic ring fractures and dislocations are uncommon but potentially life-threatening injuries in children. Early definitive management reduces risk of immediate complications as well as chronic pain and gait dysfunction. Conventional operative therapy carries substantial risk of extensive blood loss and iatrogenic neurological and vascular injury. Minimally invasive image-guided intervention may further reduce immediate risk and improve long-term outcome. To describe CT-guided closed reduction and internal fixation (CRIF) and review outcomes of unstable fracture-dislocation of the sacroiliac (SI) joint in children. Between 2000 and 2003, three children (two girls, one boy) age 8-14 years were referred to interventional radiology for treatment of unstable SI joint fracture-dislocation not adequately treated with anterior external fixation alone. The three affected SI joints (two left, one right) were treated in a combined approach by pediatric interventional radiologists and orthopedic surgeons, using a percutaneous approach under CT guidance. Over a threaded guiding pin, 7.3 mm cannulated screws were used to achieve stable reduction of the affected SI joints. One screw was removed after slight (2 mm) migration. No neurovascular or other complications occurred. All patients had satisfactory healing with near-anatomic reduction, although recovery of the youngest was delayed by associated spinal injury. Compared to open surgical alternatives, CRIF under CT guidance reduces operating time, decreases blood loss, and allows early definitive fixation and immediate non-weight-bearing mobilization with a low rate of complication for unstable posterior pelvic ring fractures. In addition, CT-guided placement of the guide pin may allow safer screw positioning and may minimize the total number of screws needed to achieve pelvic stability. (orig.)

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Environmentally acceptable thread compounds: Requirements defined

International Nuclear Information System (INIS)

Stringfellow, W.D.; Hendriks, R.V.; Jacobs, N.L.

1993-01-01

New environmental regulations on thread compounds are now being enforced in several areas with strong maritime tradition and a sensitive environment. These areas include Indonesia, Alaska and portions of Norway. The industry generally recognizes the environmental concerns but, with wider enforcement of regulations imminent, has not been able to define clearly the requirements for environmental compliance. This paper, written in collaboration with The Netherlands State Supervision of Mines, is based on the National Policy on Thread Compounds of The Netherlands. This national policy is representative of policies being followed by other North Sea governments. Similar policies might well be adopted by other governments worldwide. These policies will affect the operator, drilling contractor, and supplier. This paper provides a specific and detailed definition of thread compound requirements by addressing four relevant categories. The categories of interest are regulatory approval, environmental, health, and performance

Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Jens; Boit, Christian [Technische Universitaet Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Niermann, Tore; Lehmann, Michael [Technische Universitaet Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin (Germany)

2012-07-01

Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.

Redoable Tie-Over Dressing Using Multiple Loop Silk Threads

Directory of Open Access Journals (Sweden)

Hyeon Jong Jo

2013-05-01

Full Text Available After skin grafting, to prevent hematoma or seroma collection at the graft site, a tie-over dressing has been commonly used. However, although the conventional tie-over dressing by suture is a useful method for securing a graft site, refixation is difficult when repeated tie-over dressing is needed. Therefore, we recommend a redoable tie-over dressing technique with multiple loops threads and connecting silk threads. After the raw surface of each of our cases was covered with a skin graft, multiple loop silk thread attached with nylon at the skin graft margin. We applied the ointment gauze and wet cotton/fluffy gauze over the skin graft, then fixed the dressing by connecting cross-counter multiple loop thread with connecting silk threads. When we opened the tie-over dressing by cutting the connecting silk threads, we repeated the tie-over dressing with the same method. The skin graft was taken successfully without hematoma or seroma collection or any other complications. In conclusion, we report a novel tie-over dressing enabling simple fixation of the dressing to maintain proper tension for wounds that require repetitive fixation. Further, with this reliable method, the skin grafts were well taken.

Redoable Tie-Over Dressing Using Multiple Loop Silk Threads

Directory of Open Access Journals (Sweden)

Hyeon Jong Jo

2013-05-01

Full Text Available After skin grafting, to prevent hematoma or seroma collection at the graft site, a tie-over dressing has been commonly used. However, although the conventional tie-over dressing by suture is a useful method for securing a graft site, refixation is difficult when repeated tieover dressing is needed. Therefore, we recommend a redoable tie-over dressing technique with multiple loops threads and connecting silk threads. After the raw surface of each of our cases was covered with a skin graft, multiple loop silk thread attached with nylon at the skin graft margin. We applied the ointment gauze and wet cotton/fluffy gauze over the skin graft, then fixed the dressing by connecting cross-counter multiple loop thread with connecting silk threads. When we opened the tie-over dressing by cutting the connecting silk threads, we repeated the tie-over dressing with the same method. The skin graft was taken successfully without hematoma or seroma collection or any other complications. In conclusion, we report a novel tie-over dressing enabling simple fixation of the dressing to maintain proper tension for wounds that require repetitive fixation. Further, with this reliable method, the skin grafts were well taken.

ADVANCED SCHEDULER FOR COOPERATIVE EXECUTION OF THREADS ON MULTI-CORE SYSTEM

Directory of Open Access Journals (Sweden)

O. N. Karasik

2017-01-01

Full Text Available Three architectures of the cooperative thread scheduler in a multithreaded application that is executed on a multi-core system are considered. Architecture A0 is based on the synchronization and scheduling facilities, which are provided by the operating system. Architecture A1 introduces a new synchronization primitive and a single queue of the blocked threads in the scheduler, which reduces the interaction activity between the threads and operating system, and significantly speed up the processes of blocking and unblocking the threads. Architecture A2 replaces the single queue of blocked threads with dedicated queues, one for each of the synchronizing primitives, extends the number of internal states of the primitive, reduces the inter- dependence of the scheduling threads, and further significantly speeds up the processes of blocking and unblocking the threads. All scheduler architectures are implemented on Windows operating systems and based on the User Mode Scheduling. Important experimental results are obtained for multithreaded applications that implement two blocked parallel algorithms of solving the linear algebraic equation systems by the Gaussian elimination. The algorithms differ in the way of the data distribution among threads and by the thread synchronization models. The number of threads varied from 32 to 7936. Architecture A1 shows the acceleration of up to 8.65% and the architecture A2 shows the acceleration of up to 11.98% compared to A0 architecture for the blocked parallel algorithms computing the triangular form and performing the back substitution. On the back substitution stage of the algorithms, architecture A1 gives the acceleration of up to 125%, and architecture A2 gives the acceleration of up to 413% compared to architecture A0. The experiments clearly show that the proposed architectures, A1 and A2 outperform A0 depending on the number of thread blocking and unblocking operations, which happen during the execution of

Dislocation Processes and Frictional Stability of Faults

Science.gov (United States)

Toy, V. G.; Mitchell, T. M.; Druiventak, A.

2011-12-01

surfaces, at least at the slightly sub-seismic deformation rates of these experiments. Furthermore, once sliding initiated on the saw cut surface, an amorphous material was generated. We hypothesise that this could have been due to a breakdown of the crystal structure by a combination of cataclasis and generation of excessive dislocation densities. There would also have been a slight increase in temperature around the sliding surface during and after fault slip, which may have aided the focussing of dislocation processes around the sliding surface.

Do dual-thread orthodontic mini-implants improve bone/tissue mechanical retention?

Science.gov (United States)

Lin, Yang-Sung; Chang, Yau-Zen; Yu, Jian-Hong; Lin, Chun-Li

2014-12-01

The aim of this study was to understand whether the pitch relationship between micro and macro thread designs with a parametrical relationship in a dual-thread mini-implant can improve primary stability. Three types of mini-implants consisting of single-thread (ST) (0.75 mm pitch in whole length), dual-thread A (DTA) with double-start 0.375 mm pitch, and dual-thread B (DTB) with single-start 0.2 mm pitch in upper 2-mm micro thread region for performing insertion and pull-out testing. Histomorphometric analysis was performed in these specimens in evaluating peri-implant bone defects using a non-contact vision measuring system. The maximum inserted torque (Tmax) in type DTA was found to be the smallest significantly, but corresponding values found no significant difference between ST and DTB. The largest pull-out strength (Fmax) in the DTA mini-implant was found significantly greater than that for the ST mini-implant regardless of implant insertion orientation. Mini-implant engaged the cortical bone well as observed in ST and DTA types. Dual-thread mini-implant with correct micro thread pitch (parametrical relationship with macro thread pitch) in the cortical bone region can improve primary stability and enhanced mechanical retention.

The separate roles of subgrains and forest dislocations in the isotropic hardening of type 304 stainless steel

International Nuclear Information System (INIS)

Kassner, M.E.; Miller, A.K.; Sherby, O.D.

1982-01-01

Tests on 304 stainless steel were conducted involving first warm working in torsion, then cold working in torsion, and finally measurement of the elevated-temperature yield strength in compression. These tests permitted separation of the effects of subgrain size and forest dislocation density on the isotropic part of the flow stress. Forest dislocation strengthening appears to dominate in this material. Th results are best fitted by a root-mean-square summation of strength terms representing the contributions of solutes, forest dislocations, and subgrain boundaries. The same equation successfully predicts the flow stress during elevated-temperature transient deformation (under both constant strain rate and variable strain rate) from the transient dislocation substructure

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Development of Thread-compatible Open Source Stack

Science.gov (United States)

Zimmermann, Lukas; Mars, Nidhal; Schappacher, Manuel; Sikora, Axel

2017-07-01

The Thread protocol is a recent development based on 6LoWPAN (IPv6 over IEEE 802.15.4), but with extensions regarding a more media independent approach, which - additionally - also promises true interoperability. To evaluate and analyse the operation of a Thread network a given open source 6LoWPAN stack for embedded devices (emb::6) has been extended in order to comply with the Thread specification. The implementation covers Mesh Link Establishment (MLE) and network layer functionality as well as 6LoWPAN mesh under routing mechanism based on MAC short addresses. The development has been verified on a virtualization platform and allows dynamical establishment of network topologies based on Thread’s partitioning algorithm.

Mechanisms for decoration of dislocations by small dislocation loops under cascade damage conditions

DEFF Research Database (Denmark)

Trinkaus, H.; Singh, B.N.; Foreman, A.J.E.

1997-01-01

. This effect may arise as a result of either (a) migration and enhanced agglomeration of single SIAs in the form of loops in the strain field of the dislocation or (b) glide and trapping of SIA loops (produced directly in the cascades) in the strain field of the dislocation, In the present paper, both...... of these possibilities are examined. It is shown that the strain field of the dislocation causes a SIA depletion in the compressive as well as in the dilatational region resulting in a reduced rather than enhanced agglomeration of SIAs. (SIA depletion may, however, induce enhanced vacancy agglomeration near dislocations...

Dislocation-cavity interaction in Fe: a comparison between molecular dynamics and dislocation dynamics

International Nuclear Information System (INIS)

Hafez Haghighat, S.M.; Schaeublin, R.; Fivel, M.C.

2007-01-01

Full text of publication follows: multi-scale modeling, including molecular dynamics (MD) and discrete dislocation dynamics (DDD) methods, appears as a significant tool for the description of plasticity and mechanical properties of materials. This research is on the investigation of the subsequence effects of irradiation on the plasticity of pure Fe and focuses on the interaction of a single dislocation and a spherical cavity, as void or He bubble. Extensive MD simulations of the interaction under imposed strain rate [1, 2] have shown that various temperatures and cavity sizes result in different release stresses depending on dislocation bow out. It appears that a temperature increase and cavity size decrease reduce the cavity strength. MD simulation shows that the elastic field around the cavity is largely anisotropic. This anisotropy may influence the way the dislocation unpins from the cavity. Following the MD simulations, the interaction of a single dislocation and a spherical cavity is now simulated using a DDD discrete dislocation dynamics model. The simulation accounts for the non-Schmidt effect induced by the bcc structure of Fe through local rules derived from MD simulations [3]. The cavity is introduced in the simulation by computing the image forces using a finite element technique. The effective stress applied on the dislocation is then obtained as the superimposition of the applied stress field, the image stress field and the internal stresses. Note that such a model only uses elasticity theory and no core effect of dislocations is taken into account. One of the objectives of this work is to check whether elasticity is responsible of the behaviour observed by MD. Several cases are tested. First an edge dislocation in a (110) plane is pushed against the cavity under a pure shear loading. The local reaction of the dislocations and the cavity are compared to the MD simulations. Then, the case of a screw dislocation is studied. Finally, other loading

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Energy Technology Data Exchange (ETDEWEB)

Sundaram, S.; El Gmili, Y. [CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi, 57070 Metz (France); Puybaret, R.; Li, X.; Bonanno, P. L.; Voss, P. L.; Ougazzaden, A., E-mail: abdallah.ougazzaden@georgiatech-metz.fr [CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi, 57070 Metz (France); School of Electrical and Computer Engineering, Georgia Institute of Technology, GT Lorraine, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Salvestrini, J. P. [Universite de Lorraine, Centrale Supelec, LMOPS, EA 4423, 2 rue E. Belin, 57070 Metz (France)

2015-09-14

We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium content by nano-selective area growth on patterned AlN/Si (111) substrates. InGaN grown on SiO{sub 2} patterned templates exhibit high selectivity. Their single crystal structure is confirmed by scanning transmission electron microscope combined with an energy dispersive X-ray analysis, which also reveals the absence of threading dislocations in the InGaN nanopyramids due to elastic strain relaxation mechanisms. Cathodoluminescence measurements on a single InGaN nanopyramid clearly show an improvement of the optical properties when compared to planar InGaN grown under the same conditions. The good structural, morphological, and optical quality of the InGaN nanostructures grown on AlN/Si indicates that the nano-selective area growth technology is attractive for the realization of site-controlled indium-rich InGaN nanostructure-based devices and can also be transferred to other highly mismatched substrates.

Security threads: effective security devices in the past, present, and future

Science.gov (United States)

Wolpert, Gary R.

2002-04-01

Security threads were first used to secure banknotes in the mid 1800's. The key to their anti-counterfeiting success was the fact that by being embedded in the paper, they became an integral part of the banknote substrate. Today, all major currencies still utilize this effective security feature. Technological developments have allowed security threads to evolve from a feature authenticated by only visual means to devices that incorporate both visual and machine detectable components. When viewed from the perspective of a thread being a carrier of various security technologies and the fact that they can be incorporated into the core substrate of banknotes, documents, labels, packaging and some high valued articles, it is clear that security threads will remain as effective security devices well into the future. This paper discusses a brief historical background of security threads, current visual and machine authentication technologies incorporated into threads today and a look to the future of threads as effective security devices.

Threaded cognition: an integrated theory of concurrent multitasking.

Science.gov (United States)

Salvucci, Dario D; Taatgen, Niels A

2008-01-01

The authors propose the idea of threaded cognition, an integrated theory of concurrent multitasking--that is, performing 2 or more tasks at once. Threaded cognition posits that streams of thought can be represented as threads of processing coordinated by a serial procedural resource and executed across other available resources (e.g., perceptual and motor resources). The theory specifies a parsimonious mechanism that allows for concurrent execution, resource acquisition, and resolution of resource conflicts, without the need for specialized executive processes. By instantiating this mechanism as a computational model, threaded cognition provides explicit predictions of how multitasking behavior can result in interference, or lack thereof, for a given set of tasks. The authors illustrate the theory in model simulations of several representative domains ranging from simple laboratory tasks such as dual-choice tasks to complex real-world domains such as driving and driver distraction. (c) 2008 APA, all rights reserved

Method for reinforcing threads in multilayer composite tubes and cylindrical structures

International Nuclear Information System (INIS)

Romanoski, G.R.; Burchell, T.D.

1996-01-01

Multilayer techniques such as: tape wrapping, braiding, and filament winding represent versatile and economical routes for fabricating composite tubes and cylindrical structures. However, multilayer architectures lack the radial reinforcement required to retain threads when the desired means of connection or closure is a threaded joint. This issue was addressed in the development of a filament wound, carbon-carbon composite impact shell for the NASA radioisotope thermoelectric generator. The problem of poor thread shear strength was solved by incorporating a number of radial elements of triangular geometry around the circumference of the thread for the full length of thread engagement. The radial elements significantly increased the shear strength of the threaded joint by transmitting the applied force to the balance of composite structure. This approach is also applicable to ceramic composites

Discrete dislocation modelling of submicron indentation

NARCIS (Netherlands)

Widjaja, A; Van der Giessen, E; Needleman, A

2005-01-01

Indentation of a planar single crystal by a circular rigid indenter is analyzed using discrete dislocation plasticity. The crystal has three slip systems and is initially dislocation-free, but edge dislocations can nucleate from point sources inside the crystal. The lattice resistance to dislocation

Dislocated Shoulder: Symptoms and Causes

Science.gov (United States)

... caused by: Sports injuries. Shoulder dislocation is a common injury in contact sports, such as football and hockey, and in sports that may involve falls, such as downhill skiing, gymnastics and volleyball. ... is a common source of dislocation. Falls. You may dislocate your ...

Dynamic thread assignment in web server performance optimization

NARCIS (Netherlands)

van der Weij, W.; Bhulai, S.; van der Mei, R.D.

2009-01-01

Popular web sites are expected to handle huge number of requests concurrently within a reasonable time frame. The performance of these web sites is largely dependent on effective thread management of their web servers. Although the implementation of static and dynamic thread policies is common

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Directory of Open Access Journals (Sweden)

Kwang Hong Lee

2015-01-01

Full Text Available A method to remove the misfit dislocations and reduce the threading dislocations density (TDD in the germanium (Ge epilayer growth on a silicon (Si substrate is presented. The Ge epitaxial film is grown directly on the Si (001 donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001 handle wafer to form a germanium-on-insulator (GOI substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.

(-201) β-Gallium oxide substrate for high quality GaN materials

KAUST Repository

Roqan, Iman S.

2015-03-13

(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

Effects of dislocations on polycrystal anelasticity

Science.gov (United States)

Sasaki, Y.; Takei, Y.; McCarthy, C.; Suzuki, A.

2017-12-01

Effects of dislocations on the seismic velocity and attenuation have been poorly understood, because only a few experimental studies have been performed [Guéguen et al., 1989; Farla et al., 2012]. By using organic borneol as a rock analogue, we measured dislocation-induced anelasticity accurately over a broad frequency range. We first measured the flow law of borneol aggregates by uniaxial compression tests under a confining pressure of 0.8 MPa. A transition from diffusion creep (n = 1) to dislocation creep (n = 5) was captured at about σ = 1 MPa (40°C-50°C). After deforming in the dislocation creep regime, sample microstructure showed irregular grain shape consistent with grain boundary migration. Next, we conducted three creep tests at σ = 0.27 MPa (diffusion creep regime), σ = 1.3 MPa and σ = 1.9 MPa (dislocation creep regime) on the same sample in increasing order, and measured Young's modulus E and attenuation Q-1 after each creep test by forced oscillation tests. The results show that as σ increased, E decreased and Q-1 increased. These changes induced by dislocations, however, almost fully recovered during the forced oscillation tests performed for about two weeks under a small stress (σ = 0.27 MPa) due to the dislocation recovery (annihilation). In order to constrain the time scale of the dislocation-induced anelastic relaxation, we further measured Young's modulus E at ultrasonic frequency before and after the dislocation creep and found that E at 106 Hz is not influenced by dislocations. Because E at 100 Hz is reduced by dislocations by 10%, the dislocation-induced anelastic relaxation occurs mostly between 102-106 Hz which is at a higher frequency than grain-boundary-induced anelasticity. To avoid dislocation recovery during the anelasticity measurement, we are now trying to perform an in-situ measurement of anelasticity while simultaneously deforming under a high stress associated with dislocation creep. The combination of persistent creep

Traumatic hip dislocations in children

International Nuclear Information System (INIS)

Minhas, M.S.

2010-01-01

Objectives: To evaluate clinical features, treatment and relationship to the time period between dislocation, reduction and early complications of traumatic dislocation of hip in children. Methods: Case series conducted at Jinnah Post Graduate Medical Centre Karachi from July 2005 to August 2009. Children with traumatic hip dislocation up to fifteen years of age who presented in last four years were included in this study. Their clinical information, etiology, associated injuries, duration, method of reduction and early complications are evaluated through emergency room proforma and indoor record. Follow up of patient was updated in outpatient department. Results: We had eight patients, six boys and two girls. Youngest 2.4 years and eldest was 12 years with mean age of 6.2 +- 3.8 years. All presented with posterior hip dislocation. Etiology was road traffic accident in two and history of fall in remaining six patients. Average duration of time between dislocation and reduction was 19 hours range 3-72 hours. Dislocated hips were reduced under General Anaesthesia in two patients and under sedation analgesia in six patients. No complications were noted in eight cases with mean 18.75 +- 13.23 months follows up. Conclusion: Traumatic hip dislocation in children is not rare. Slight trauma causes dislocation in younger age and immediate closed reduction and Immobilization reduces complications. (author

Asymptotic Analysis of a System of Algebraic Equations Arising in Dislocation Theory

KAUST Repository

Hall, Cameron L.; Chapman, S. Jonathan; Ockendon, John R.

2010-01-01

The system of algebraic equations given by σn j=0, j≠=i sgn(xi-xj )|xi-xj|a = 1, i = 1, 2, ⋯ , n, x0 = 0, appears in dislocation theory in models of dislocation pile-ups. Specifically, the case a = 1 corresponds to the simple situation where n dislocations are piled up against a locked dislocation, while the case a = 3 corresponds to n dislocation dipoles piled up against a locked dipole. We present a general analysis of systems of this type for a > 0 and n large. In the asymptotic limit n→∞, it becomes possible to replace the system of discrete equations with a continuum equation for the particle density. For 0 < a < 2, this takes the form of a singular integral equation, while for a > 2 it is a first-order differential equation. The critical case a = 2 requires special treatment, but, up to corrections of logarithmic order, it also leads to a differential equation. The continuum approximation is valid only for i neither too small nor too close to n. The boundary layers at either end of the pile-up are also analyzed, which requires matching between discrete and continuum approximations to the main problem. © 2010 Society for Industrial and Applied Mathematics.

Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

Energy Technology Data Exchange (ETDEWEB)

Trinkaus, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Festkoerperforschung; Singh, B.N. [Materials Research Department, Risoe National Laboratory, DK-4000 Roskilde (Denmark); Foreman, A.J.E. [Materials Performance Department, Harwell Laboratory, Oxfordshire OX11 0RA (United Kingdom)

1997-11-01

In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop `cloud` are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.). 55 refs.

Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

International Nuclear Information System (INIS)

Trinkaus, H.; Foreman, A.J.E.

1997-01-01

In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop 'cloud' are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.)

Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN

Energy Technology Data Exchange (ETDEWEB)

Mimila-Arroyo, J., E-mail: jmimila@cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Morales, E. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Lusson, A. [Groupe d' Etudes de la Matiere Condensee, Universite de Versailles, CNRS (UMR 8635), Batiment FERMAT, 45, Avenue des Etats-Unis, 78035 Versailles (France)

2012-09-20

Highlights: Black-Right-Pointing-Pointer This is the first method proposed to probe the electrical activity of dislocations. Black-Right-Pointing-Pointer Based on Hall and resistivity measurements under sub-bad gap illumination. High sensitivity to the charge contained at the dislocations. Black-Right-Pointing-Pointer Is non destructive. Black-Right-Pointing-Pointer And can be applied at some point in the processing of samples and devices. - Abstract: Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities.

[Classification and Treatment of Sacroiliac Joint Dislocation].

Science.gov (United States)

Tan, Zhen; Huang, Zhong; Li, Liang; Meng, Wei-Kun; Liu, Lei; Zhang, Hui; Wang, Guang-Lin; Huang, Fu-Guo

2017-09-01

To develop a renewed classification and treatment regimen for sacroiliac joint dislocation. According to the direction of dislocation of sacroiliac joint,combined iliac,sacral fractures,and fracture morphology,sacroiliac joint dislocation was classified into 4 types. Type Ⅰ (sacroiliac anterior dislocation): main fracture fragments of posterior iliac wing dislocated in front of sacroiliac joint. Type Ⅱ (sacroiliac posterior dislocation): main fracture fragments of posterior iliac wing dislocated in posterior of sacroiliac joint. Type Ⅲ (Crescent fracturedislocation of the sacroiliac joint): upward dislocation of posterior iliac wing with oblique fracture through posterior iliac wing. Type ⅢA: a large crescent fragment and dislocation comprises no more than onethird of sacroiliac joint,which is typically inferior. Type ⅢB: intermediatesize crescent fragment and dislocation comprises between one and twothirds of joint. Type ⅢC: a small crescent fragment where dislocation comprises most,but not the entire joint. Different treatment regimens were selected for different types of fractures. Treatment for type Ⅰ sacroiliac joint dislocation: anterior iliac fossa approach pry stripping reset; sacroiliac joint fixed with sacroiliac screw through percutaneous. Treatment for type Ⅱ sacroiliac joint dislocation: posterior sacroiliac joint posterior approach; sacroiliac joint fixed with sacroiliac screw under computer guidance. Treatment for type ⅢA and ⅢB sacroiliac joint dislocation: posterior sacroiliac joint approach; sacroiliac joint fixed with reconstruction plate. Treatment for type ⅢC sacroiliac joint dislocation: sacroiliac joint closed reduction; sacroiliac joint fixed with sacroiliac screw through percutaneous. Treatment for type Ⅳ sacroiliac joint dislocation: posterior approach; sacroiliac joint fixed with spinal pelvic fixation. Results of 24 to 72 months patient follow-up (mean 34.5 months): 100% survival,100% wound healing,and 100

Quasicontinuum analysis of dislocation-coherent twin boundary interaction to provide local rules to discrete dislocation dynamics

Science.gov (United States)

Tran, H.-S.; Tummala, H.; Duchene, L.; Pardoen, T.; Fivel, M.; Habraken, A. M.

2017-10-01

The interaction of a pure screw dislocation with a Coherent Twin Boundary Σ3 in copper was studied using the Quasicontinuum method. Coherent Twin Boundary behaves as a strong barrier to dislocation glide and prohibits slip transmission across the boundary. Dislocation pileup modifies the stress field at its intersection with the Grain Boundary (GB). A methodology to estimate the strength of the barrier for a dislocation to slip across CTB is proposed. A screw dislocation approaching the boundary from one side either propagates into the adjacent twin grain by cutting through the twin boundary or is stopped and increases the dislocation pileup amplitude at the GB. Quantitative estimation of the critical stress for transmission was performed using the virial stress computed by Quasicontinuum method. The transmission mechanism and critical stress are in line with the literature. Such information can be used as input for dislocation dynamic simulations for a better modeling of grain boundaries.

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Energy Technology Data Exchange (ETDEWEB)

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Hybrid dislocated control and general hybrid projective dislocated synchronization for the modified Lue chaotic system

International Nuclear Information System (INIS)

Xu Yuhua; Zhou Wuneng; Fang Jianan

2009-01-01

This paper introduces a modified Lue chaotic system, and some basic dynamical properties are studied. Based on these properties, we present hybrid dislocated control method for stabilizing chaos to unstable equilibrium and limit cycle. In addition, based on the Lyapunov stability theorem, general hybrid projective dislocated synchronization (GHPDS) is proposed, which includes complete dislocated synchronization, dislocated anti-synchronization and projective dislocated synchronization as its special item. The drive and response systems discussed in this paper can be strictly different dynamical systems (including different dimensional systems). As examples, the modified Lue chaotic system, Chen chaotic system and hyperchaotic Chen system are discussed. Numerical simulations are given to show the effectiveness of these methods.

Hybrid dislocated control and general hybrid projective dislocated synchronization for the modified Lue chaotic system

Energy Technology Data Exchange (ETDEWEB)

Xu Yuhua [College of Information Science and Technology, Donghua University, Shanghai 201620 (China) and Department of Maths, Yunyang Teacher' s College, Hubei 442000 (China)], E-mail: yuhuaxu2004@163.com; Zhou Wuneng [College of Information Science and Technology, Donghua University, Shanghai 201620 (China)], E-mail: wnzhou@163.com; Fang Jianan [College of Information Science and Technology, Donghua University, Shanghai 201620 (China)

2009-11-15

This paper introduces a modified Lue chaotic system, and some basic dynamical properties are studied. Based on these properties, we present hybrid dislocated control method for stabilizing chaos to unstable equilibrium and limit cycle. In addition, based on the Lyapunov stability theorem, general hybrid projective dislocated synchronization (GHPDS) is proposed, which includes complete dislocated synchronization, dislocated anti-synchronization and projective dislocated synchronization as its special item. The drive and response systems discussed in this paper can be strictly different dynamical systems (including different dimensional systems). As examples, the modified Lue chaotic system, Chen chaotic system and hyperchaotic Chen system are discussed. Numerical simulations are given to show the effectiveness of these methods.

Performance improvement of developed program by using multi-thread technique

Directory of Open Access Journals (Sweden)

Surasak Jabal

2015-03-01

Full Text Available This research presented how to use a multi-thread programming technique to improve the performance of a program written by Windows Presentation Foundation (WPF. The Computer Assisted Instruction (CAI software, named GAME24, was selected to use as a case study. This study composed of two main parts. The first part was about design and modification of the program structure upon the Object Oriented Programing (OOP approach. The second part was about coding the program using the multi-thread technique which the number of threads were based on the calculated Catalan number. The result showed that the multi-thread programming technique increased the performance of the program 44%-88% compared to the single-thread technique. In addition, it has been found that the number of cores in the CPU also increase the performance of multithreaded program proportionally.

Coarse-grained elastodynamics of fast moving dislocations

International Nuclear Information System (INIS)

Xiong, Liming; Rigelesaiyin, Ji; Chen, Xiang; Xu, Shuozhi; McDowell, David L.; Chen, Youping

2016-01-01

The fundamental mechanism of dynamic plasticity in metallic materials subjected to shock loading remains unclear because it is difficult to obtain the precise information of individual fast moving dislocations in metals from the state-of-the-art experiments. In this work, the dynamics of sonic dislocations in anisotropic crystalline materials is explored through a concurrent atomistic-continuum modeling method. We make a first attempt to characterize the complexity of nonuniformly moving dislocations in anisotropic crystals from atomistic to microscale, including the energy intensities as well as the wavelengths of acoustic phonons emitted from sonic dislocations, and the velocity-dependent stress fluctuations around the core of nonuniformly moving dislocations. Instantaneous dislocation velocities and phonon drag effects on the dislocation motions are quantified and analyzed. Mach cones in a V-shaped pattern of the phonon wave-fronts are observed in the wake of the sonic dislocations. Analysis of simulation results based on a wavelet transform show that the faster a dislocation is moving, the longer the emitted phonon wavelength. The dislocation velocity drops dramatically with the occurrence of the interactions between dislocations and phonon waves reflected from the boundaries of specimens. The concurrent atomistic-continuum modeling framework is demonstrated to be the first multiscale method that explicitly treats the strong coupling between the long-range elastic fields away from the dislocation core, the highly nonlinear time-dependent stress field within the core, and the evolutions of the atomic-scale dislocation core structures. As such, it is shown that this method is capable in predicting elastodynamics of dislocations in the presence of inertia effects associated with sonic dislocations in micron-sized anisotropic crystalline materials from the atomic level, which is not directly accessible to the recent elastodynamic discrete dislocation model.

Creating and improving multi-threaded Geant4

CERN Document Server

Dong, Xin; Apostolakis, John; Jarp, Sverre; Nowak, Andrzej; Asai, Makoto; Brandt, Daniel

2012-01-01

We document the methods used to create the multi-threaded prototype Geant4MT from a sequential version of Geant4. We cover the Source-to-Source transformations applied, and discuss the process of verifying the correctness of the Geant4MT toolkit and applications based on it. Tools to ensure that the results of a transformed multi-threaded application are exactly equal to the original sequential version are under development. Stand-alone or simple applications can be adapted within 1-2 working days. Geant4MT is shown to scale linearly on an 80-core computer. In the special case of a single worker thread on one core, 30% overhead has been observed. We explain the reasons for this and the improvements introduced to reduce this overhead.

Cathodoluminescence studies of defects and piezoelectric fields in GaN

International Nuclear Information System (INIS)

Henley, S.

2002-01-01

200nm at low electron beam irradiation doses to 330nm after higher dose irradiation in the SEM. It is proposed that the change in the MCDL and the prolonged nature of the blue shift of the QW CL peak can be explained by the filling of trap states in the vicinity of the QW. It is suggested that these trap states take the form of fluctuations in the In content of the QW. An epitaxial laterally overgrown GaN sample (ELOG) was studied using similar techniques employed on the InGaN/GaN SQW. ELOG films are often used commercially as substrates for blue and violet GaN based LDs. The ELOG sample was shown to have a significantly reduced threading dislocation density in the overgrown regions. It was shown that the reduction in dislocation density resulted in an improved luminescence efficiency. The technique was non-ideal however, as the coalescence boundary of the ELO regions was shown to be a tilt-boundary described by the generation of threading dislocations. Some of these dislocations were observed to generate in-plane dislocation half-loops, which moved under the influence of the stress present. These dislocation half loops were shown to act as non-radiative recombination centres. (author)

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Science.gov (United States)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

Alloying effects of refractory elements in the dislocation of Ni-based single crystal superalloys

Directory of Open Access Journals (Sweden)

Shiyu Ma

2016-12-01

Full Text Available The alloying effects of W, Cr and Re in the [100] (010 edge dislocation cores (EDC of Ni-based single crystal superalloys are investigated using first-principles based on the density functional theory (DFT. The binding energy, Mulliken orbital population, density of states, charge density and radial distribution functions are discussed, respectively. It is clearly demonstrated that the addition of refractory elements improves the stability of the EDC systems. In addition, they can form tougher bonds with their nearest neighbour (NN Ni atoms, which enhance the mechanical properties of the Ni-based single crystal superalloys. Through comparative analysis, Cr-doped system has lower binding energy, and Cr atom has evident effect to improve the systemic stability. However, Re atom has the stronger alloying effect in Ni-based single crystal superalloys, much more effectively hindering dislocation motion than W and Cr atoms.

UTLEON3 Exploring Fine-Grain Multi-Threading in FPGAs

CERN Document Server

Daněk, Martin; Kohout, Lukáš; Sýkora, Jaroslav; Bartosinski, Roman

2013-01-01

This book describes a specification, microarchitecture, VHDL implementation and evaluation of a SPARC v8 CPU with fine-grain multi-threading, called micro-threading. The CPU, named UTLEON3, is an alternative platform for exploring CPU multi-threading that is compatible with the industry-standard GRLIB package. The processor microarchitecture was designed to map in an efficient way the data-flow scheme on a classical von Neumann pipelined processing used in common processors, while retaining full binary compatibility with existing legacy programs.  Describes and documents a working SPARC v8, with fine-grain multithreading and fast context switch; Provides VHDL sources for the described processor; Describes a latency-tolerant framework for coupling hardware accelerators to microthreaded processor pipelines; Includes programming by example in the micro-threaded assembly language.    

Epidemiology of Isolated Acromioclavicular Joint Dislocation

Directory of Open Access Journals (Sweden)

Claudio Chillemi

2013-01-01

Full Text Available Background. Acromioclavicular (AC joint dislocation is a common shoulder problem. However, information about the basic epidemiological features of this condition is scarce. The aim of this study is to analyze the epidemiology of isolated AC dislocation in an urban population. Materials and Methods. A retrospective database search was performed to identify all patients with an AC dislocation over a 5-year period. Gender, age, affected side and traumatic mechanism were taken into account. X-rays were reviewed by two of the authors and dislocations were classified according to the Rockwood’s criteria. Results. A total of 108 patients, with a mean age of 37.5 years were diagnosed with AC dislocation. 105 (97.2% had an isolated AC dislocation, and 3 (2.8% were associated with a clavicle fracture. The estimated incidence was 1.8 per 10000 inhabitants per year and the male-female ratio was 8.5 : 1. 50.5% of all dislocations occurred in individuals between the ages of 20 and 39 years. The most common traumatic mechanism was sport injury and the most common type of dislocation was Rockwood type III. Conclusions. Age between 20 and 39 years and male sex represent significant demographic risk factors for AC dislocation.

Theory of interacting dislocations on cylinders.

Science.gov (United States)

Amir, Ariel; Paulose, Jayson; Nelson, David R

2013-04-01

We study the mechanics and statistical physics of dislocations interacting on cylinders, motivated by the elongation of rod-shaped bacterial cell walls and cylindrical assemblies of colloidal particles subject to external stresses. The interaction energy and forces between dislocations are solved analytically, and analyzed asymptotically. The results of continuum elastic theory agree well with numerical simulations on finite lattices even for relatively small systems. Isolated dislocations on a cylinder act like grain boundaries. With colloidal crystals in mind, we show that saddle points are created by a Peach-Koehler force on the dislocations in the circumferential direction, causing dislocation pairs to unbind. The thermal nucleation rate of dislocation unbinding is calculated, for an arbitrary mobility tensor and external stress, including the case of a twist-induced Peach-Koehler force along the cylinder axis. Surprisingly rich phenomena arise for dislocations on cylinders, despite their vanishing Gaussian curvature.

Threaded-fastener experience in nuclear power plants

International Nuclear Information System (INIS)

Koo, W.H.

1983-01-01

This report identifies 44 incidents of threaded-fastener degradation and failure in nuclear power plants from October 1964 to March 1982. It provides an overview of some of the threaded-fastener problems that have occurred since 1964. Safety implications of these incidents are discussed, and short-term regulatory actions and ongoing long-term regulatory actions are described. Information included in this report represents the current NRC staff understanding of each issue

High Temperature Magneto-Elastic Instability of Dislocations in bcc Iron

International Nuclear Information System (INIS)

Dudarev, S.; Bullough, R.; Gilbert, M.; Derlet, P.

2007-01-01

Full text of publication follows: Density functional calculations show that the low temperature structure of self-interstitial defects in iron is fundamentally different from the structure of self-interstitial defects in all the other bcc metals. The origin of this anomaly is associated with the magnetic part of the cohesive energy of iron, where the Stoner exchange term stabilizes the body centred cubic phase, and where the magnetic part of energy is strongly affected by the large strain associated with the core region of an interstitial defect. At elevated temperatures magnetic excitations erode the stability of the bcc phase, giving rise to the gradual softening of the 110 transverse acoustic phonon modes and to the α-γ bcc-fcc martensitic phase transition occurring at 912 deg. C at normal pressure. Elastic moduli of bcc iron vary as a function of temperature with c' = (C 11 - c 12 )/2 vanishing at the α-γ transition point. This has significant effects on the magnitude of both the elastic interactions between dislocations and other defects in the material and on the intrinsic structural stability of the dislocations and other defects themselves. To evaluate structural stability of defects at elevated temperatures we investigate elastic self-energies of dislocations in the continuum anisotropic elasticity approximation. We also develop atomistic models of dislocations and point defects based on a generalised form of the magnetic potential. By varying the magnetic part of the potential we are able to reproduce the experimentally observed variation of elastic moduli as a function of temperature, and assess relative stability of various types of defect structures. Our analysis shows that, in complete contrast to other straight dislocations, the elastic self-energy of straight 100 edge dislocations actually sharply decreases as we approach the α-γ transition, indicating that this surprising fact is a probable explanation of the frequent observation of the 100

Relaxation strain measurements in cellular dislocation structures

International Nuclear Information System (INIS)

Tsai, C.Y.; Quesnel, D.J.

1984-01-01

The conventional picture of what happens during a stress relaxation usually involves imagining the response of a single dislocation to a steadily decreasing stress. The velocity of this dislocation decreases with decreasing stress in such a way that we can measure the stress dependence of the dislocation velocity. Analysis of the data from a different viewpoint enables us to calculate the apparent activation volume for the motion of the dislocation under the assumption of thermally activated glie. Conventional thinking about stress relaxation, however, does not consider the eventual fate of this dislocation. If the stress relaxes to a low enough level, it is clear that the dislocation must stop. This is consistent with the idea that we can determine the stress dependence of the dislocation velocity from relaxation data only for those cases where the dislocation's velocity is allowed to approach zero asymptotically, in short, for those cases where the dislocation never stops. This conflict poses a dilemma for the experimentalist. In real crystals, however, obstacles impede the dislocation's progress so that those dislocations which are stopped at a given stress will probably never resume motion under the influence of the steadily declining stress present during relaxation. Thus one could envision stress relaxation as a process of exhaustion of mobile dislocations, rather than a process of decreasing dislocation velocity. Clearly both points of view have merit and in reality both mechanisms contribute to the phenomena

Primary traumatic patellar dislocation

Directory of Open Access Journals (Sweden)

Tsai Chun-Hao

2012-06-01

Full Text Available Abstract Acute traumatic patellar dislocation is a common injury in the active and young adult populations. MRI of the knee is recommended in all patients who present with acute patellar dislocation. Numerous operative and non-operative methods have been described to treat the injuries; however, the ideal management of the acute traumatic patellar dislocation in young adults is still in debate. This article is intended to review the studies to the subjects of epidemiology, initial examination and management.

The relationship of dislocation and vacancy cluster with yield strength in magnetic annealed UFG 1050 aluminum alloy

Energy Technology Data Exchange (ETDEWEB)

Cao, Yiheng [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); He, Lizi, E-mail: helizi@epm.neu.edu.cn [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China); Cao, Xingzhong; Zhang, Peng; Wang, Baoyi [Key Laboratory of Nuclear Radiation and Nuclear Energy Technology, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Zhou, Yizhou [Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Ping; Cui, Jianzhong [Key Lab of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819 (China); School of Materials Science and Engineering, Northeastern University, Shenyang 110819 (China)

2017-01-02

The evolutions of tensile properties and microstructures of ultrafine grained (UFG) 1050 aluminum alloy after annealing at 90–210 °C for 4 h without and with 12 T high magnetic field were investigated by tensile test, electron back scattering diffraction pattern (EBSD), transmission electron microscopy (TEM) and positron annihilation lifetime spectroscopy (PALS). When annealing temperature increases from 90 °C to 150 °C, the yield strength (YS) of UFG 1050 aluminum alloy increases, it is because that the increase in the density of vacancy clusters due to the activated monovacancies and the high angle boundaries (HABs) having more stable structures, both of them can act as effective barriers to dislocation motion during tensile deformation. When annealing at 210 °C, the YS of UFG 1050 aluminum alloy deceases, it is because that the decrease in the vacancy clusters density due to the thermally activated the vacancy clusters annihilating at sinks and the dislocation density decreases. The YS of magnetic annealed samples are lower at 90 °C and 150 °C due to the lower density of dislocations and vacancy clusters. The difference of YS between samples annealed without and with magnetic field disappears at 210 °C due to the sharply reduced strain hardening stage.

Structural Analysis of Taper-Threaded Rebar Couplers

International Nuclear Information System (INIS)

Chu, Seok Jae; Kwon, Hyuk Mo; Seo, Sang Hwan

2014-01-01

A number of rebar couplers were developed by the leading companies. The information about the products is available from the company website. However, the theory on the taper-threaded coupler is not available. In this paper, the mechanics of the taper-thread was developed to understand the effect of the tightening torque. Structural analysis of our own newly developed rebar coupler was done to improve the strength of the coupler. The taper-threaded rebar coupler was analyzed. The tightening of the rebar into the coupler developed a circumferential stress in the coupler. The circumferential stress depends on the coefficient of friction as well as the tightening torque. The circumferential stress is less than the allowable stress 20 kgf/mm 2 of the material for the coefficient of friction greater than 0.1. The tightening of the rebar into the coupler and the subsequent tensioning was simulated using CATIA. Linear elastic analysis considering contact was done. The tightening of the taper-threaded rebar developed a uniform stress distribution in both standard coupler and position coupler. On the other hand, the tightening of the nut in the axial direction developed a non-uniform stress distribution. Similarly the tensioning also developed a non-uniform stress distribution

Molecular dynamics simulation of dislocation intersections in aluminum

International Nuclear Information System (INIS)

Li, M.; Chu, W.Y.; Qian, C.F.; Gao, K.W.; Qiao, L.J.

2003-01-01

The molecular dynamics method is used to simulate dislocation intersection in aluminum containing 1.6x10 6 atoms using embedded atom method (EAM) potential. The results show that after intersection between two right-hand screw dislocations of opposite sign there are an extended jog corresponding to a row of 1/3 vacancies in the intersected dislocation, and a trail of vacancies behind the moving dislocation. After intersection between screw dislocations of same sign, there are an extended jog corresponding to a row of 1/3 interstitials in the intersected dislocation, and a trail of interstitials behind the moving dislocation. After intersection between screw and edge dislocations with different Burgers vector, there are a constriction corresponding to one 1/3 vacancy in the edge dislocation, and no point-defects behind the screw dislocation. When a moving screw dislocation intersects an edge dislocation with the same Burgers vector, the point of intersection will split into two constrictions corresponding to one 1/3 vacancy and 1/3 interstitial, respectively. The moving screw dislocation can pass the edge dislocation only after the two constrictions, which can move along the line of intersection of the two slip planes, meet and annihilate

High efficiency carbon nanotube thread antennas

Science.gov (United States)

Amram Bengio, E.; Senic, Damir; Taylor, Lauren W.; Tsentalovich, Dmitri E.; Chen, Peiyu; Holloway, Christopher L.; Babakhani, Aydin; Long, Christian J.; Novotny, David R.; Booth, James C.; Orloff, Nathan D.; Pasquali, Matteo

2017-10-01

Although previous research has explored the underlying theory of high-frequency behavior of carbon nanotubes (CNTs) and CNT bundles for antennas, there is a gap in the literature for direct experimental measurements of radiation efficiency. These measurements are crucial for any practical application of CNT materials in wireless communication. In this letter, we report a measurement technique to accurately characterize the radiation efficiency of λ/4 monopole antennas made from the CNT thread. We measure the highest absolute values of radiation efficiency for CNT antennas of any type, matching that of copper wire. To capture the weight savings, we propose a specific radiation efficiency metric and show that these CNT antennas exceed copper's performance by over an order of magnitude at 1 GHz and 2.4 GHz. We also report direct experimental observation that, contrary to metals, the radiation efficiency of the CNT thread improves significantly at higher frequencies. These results pave the way for practical applications of CNT thread antennas, particularly in the aerospace and wearable electronics industries where weight saving is a priority.

Energetics of dislocation nucleation under a nanoindenter

International Nuclear Information System (INIS)

Zhang Chuanli; Xu Guanshui

2005-01-01

We present an analysis of dislocation nucleation under an idealized nanoindenter based on the variational boundary integral formulation of the Peierls-Nabarro dislocation model. By solving the embryonic dislocation profiles, corresponding to the relative displacements between the two adjacent atomic layers along the slip plane, we have determined the critical conditions for athermal dislocation nucleation as well as the activation energies required to thermally activate embryonic dislocations from their stable to unstable saddle point configurations. The effect of the size of the indenter on the energetics of dislocation nucleation is quantitatively characterized. The result is compared with a simplified analysis based on the application of the Rice model for dislocation nucleation at a crack tip

Energetics of dislocation nucleation under a nanoindenter

Energy Technology Data Exchange (ETDEWEB)

Zhang Chuanli [College of Mechanical Engineering, Yangtze University, Jingzhou, Hubei 434023 (China); Department of Mechanical Engineering, University of California, Riverside, CA 92521 (United States); Xu Guanshui [Department of Mechanical Engineering, University of California, Riverside, CA 92521 (United States)]. E-mail: guanshui.xu@ucr.edu

2005-07-25

We present an analysis of dislocation nucleation under an idealized nanoindenter based on the variational boundary integral formulation of the Peierls-Nabarro dislocation model. By solving the embryonic dislocation profiles, corresponding to the relative displacements between the two adjacent atomic layers along the slip plane, we have determined the critical conditions for athermal dislocation nucleation as well as the activation energies required to thermally activate embryonic dislocations from their stable to unstable saddle point configurations. The effect of the size of the indenter on the energetics of dislocation nucleation is quantitatively characterized. The result is compared with a simplified analysis based on the application of the Rice model for dislocation nucleation at a crack tip.

Estimation of dislocation concentration in plastically deformed Al-Li based alloy by positron annihilation

International Nuclear Information System (INIS)

Abdelrahman, M.

1997-01-01

Measurements of positron annihilation mean lifetime τ have been performed on eight different specimens of Al-Li based alloy plastically deformed at room temperature up to 40% thickness reduction. This measurement shows clearly positron trapping by dislocations. The positron lifetime τ exhibits a saturation for deformations larger than (15%) thickness reduction. The fitted lifetime varies from (183±2 ps) for annealed sample to (205±2 ps) for the dislocation saturated value. Using a trapping model, the data yield the values of μ=3.83x10 -8 cm 3 s -1 for the specific trapping rate and σ=3.58x10 -15 cm 2 for the trapping cross section, some what lower than those for plastically deformed Al single crystals. The value obtained for Δτ, the increase in lifetime of positrons trapped at dislocations in plastically deformed Al-Li based alloy sample over annihilation in the annealed sample, is 22 ps. This is about 40% of the lifetime increase for the case of positrons trapped at dislocations in plastically deformed Al single crystals. Dislocation densities at different thickness reduction have been estimated. (author)

Ipsilateral open anterior hip dislocation and open posterior elbow dislocation in an adult

Directory of Open Access Journals (Sweden)

Kumar Sunil

2014-02-01

Full Text Available 【Abstract】Open anterior dislocation of the hip is a very rare injury, especially in adults. It is a hyperabduction, external rotation and extension injury. Its combination with open posterior dislocation of the elbow has not been described in English language-based medical literature. Primary resuscitation, debridement, urgent reduction of dislocation, and adequate antibiotic support resulted in good clinical outcome in our patient. At 18 months follow-up, no signs of avascular necrosis of the femoral head or infection were observed.

Direct observations and analyses of dislocation substructures in the α phase of an α/β Ti-alloy formed by nanoindentation

International Nuclear Information System (INIS)

Viswanathan, G.B.; Lee, Eunha; Maher, Dennis M.; Banerjee, S.; Fraser, Hamish L.

2005-01-01

The hardness of α-titanium grains as a function of both indentation depth and orientation has been assessed using nanoindentation. Direct observations and analyses of the dislocation substructures have been achieved by cutting thin-foil membranes exactly through given indents with a dual-beam focused-ion-beam instrument and from diffraction-contrast experiments in a transmission electron microscope. It was found, as expected, that the hardness varied with the depth of indentation. Regarding the orientation dependence of hardness, the nature of the statistically stored dislocations as well as that of the geometrically necessary dislocations has been identified. Thus, the occurrence of the majority of the former dislocations can be predicted on the basis of Schmid's law, while noting the presence of minor densities of other dislocations required presumably because of the arbitrary shape change imposed by the nanoindenter. The geometrically necessary dislocations have been identified as the appropriate combinations of slip dislocations such that an overall displacement parallel to the direction of the indentation results

Lubrication of dislocation glide in MgO by hydrous defects

Science.gov (United States)

Skelton, Richard; Walker, Andrew M.

2018-02-01

Water-related defects, principally in the form of protonated cation vacancies, are potentially able to weaken minerals under high-stress or low-temperature conditions by reducing the Peierls stress required to initiate dislocation glide. In this study, we use the Peierls-Nabarro (PN) model to determine the effect of protonated Mg vacancies on the 1/2{110} and 1/2{100} slip systems in MgO. This PN model is parameterized using generalized stacking fault energies calculated using plane-wave density functional theory, with and without protonated Mg vacancies present at the glide plane. It found that these defects increase dislocation core widths and reduce the Peierls stress over the entire pressure range 0-125 GPa. Furthermore, 1/2{110} slip is found to be more sensitive to the presence of protonated vacancies which increases in the pressure at which {100} becomes the easy glide plane for 1/2 screw dislocations. These results demonstrate, for a simple mineral system, that water-related defects can alter the deformation behavior of minerals in the glide-creep regime by reducing the stress required to move dislocations by glide. (Mg, Fe)O is the most anisotropic mineral in the Earth's lower mantle, so the differential sensitivity of the major slip systems in MgO to hydrous defects has potential implications for the interpretation of the seismic anisotropy in this region.

Servicing a globally broadcast interrupt signal in a multi-threaded computer

Science.gov (United States)

Attinella, John E.; Davis, Kristan D.; Musselman, Roy G.; Satterfield, David L.

2015-12-29

Methods, apparatuses, and computer program products for servicing a globally broadcast interrupt signal in a multi-threaded computer comprising a plurality of processor threads. Embodiments include an interrupt controller indicating in a plurality of local interrupt status locations that a globally broadcast interrupt signal has been received by the interrupt controller. Embodiments also include a thread determining that a local interrupt status location corresponding to the thread indicates that the globally broadcast interrupt signal has been received by the interrupt controller. Embodiments also include the thread processing one or more entries in a global interrupt status bit queue based on whether global interrupt status bits associated with the globally broadcast interrupt signal are locked. Each entry in the global interrupt status bit queue corresponds to a queued global interrupt.

Permission-based separation logic for multi-threaded Java programs

NARCIS (Netherlands)

Amighi, A.; Haack, Christian; Huisman, Marieke; Hurlin, C.

This paper presents a program logic for reasoning about multithreaded Java-like programs with concurrency primitives such as dynamic thread creation, thread joining and reentrant object monitors. The logic is based on concurrent separation logic. It is the first detailed adaptation of concurrent

Significance of dislocations in the mechanism of Hadfield cast steel strengthening

International Nuclear Information System (INIS)

Stradomski, Z.; Morgiel, J.; Olszewski, J.

1999-01-01

The paper presents the results of microstructural examination of the adfield cast steel (L120G13 according to Polish Standards) strengthened by explosion method, which is an attractive alternative of the surface treatment of metal materials regarding its technological, economical and organizational aspects. The presented results have been obtained by means of qualitative and quantitative analysis of thin foils taken at different distances from the material surface being strengthened by single, double or triple detonation of 3 mm thick charges of explosive. The high pressure, order of 18 GPa, causes significant changes in dislocation structure of the austenite matrix. The strengthening of Hadfield cast steel during explosion is based on the increase of the dislocation density by several times as related to the supersaturated state and on the creation of dislocation bands consisting of short, densely tangled dislocations. Plastic deformation mechanisms i. e., slip lines and micro-twins, are definitively of minor importance. It has been also proved by means of the nuclear resonance method that the explosion do not cause changes in distribution of carbon atoms in the nearest neighbourhood of Fe atoms and that austenite is not transformed into the α-martensite or the hexagonal ε-phase. (author)

Collaborative learning using VoiceThread in an online graduate course

Directory of Open Access Journals (Sweden)

Yu-Hui Ching

2013-09-01

Full Text Available Collaborative learning enables participants in a learning community to externalize and share knowledge, experiences, and practice. However, collaborative learning in an online environment can be challenging due to the lack of face-to face interaction. This current study examined twenty graduate students’ experiences of using VoiceThread for a collaborative activity in an entirely online course to explore students’ perceptions of using multi-modal communication for collaboration and knowledge sharing. The results of this study revealed that graduate students had very positive experiences toward using VoiceThread for collaborative learning. The participants found VoiceThread easy to learn and use, and reported that audio and video interaction on VoiceThread helped connect them with their peers. More than half of the participants interacted with peers using audio, followed by text and then by video. Half of the students felt they were more connected to peers; however, feeling more connected did not result in more participation as most of the students only participated at the level that met the course requirement. Participants identified benefits and drawbacks of using VoiceThread for collaboration as compared to using text-based discussion forums. The most frequently mentioned benefit of using VoiceThread for collaboration exemplifies its multi-modal affordance that enables learners to communicate emotion, personality, and other non-verbal cues conducive to better understanding and interpretation of meanings. About half of the participants indicated that they preferred VoiceThread to text-based discussion forums for collaborative learning activity. Challenges and implications for future research are also discussed.

Medial peritalar fracture dislocation of the talar body

Directory of Open Access Journals (Sweden)

Jacob B. Stirton

2015-04-01

Full Text Available Peritalar fracture dislocations typically involve the talar neck and are classified according to Hawkins. To our knowledge, peritalar fracture dislocation involving the talar body has not been formally reported. In this article, we describe a case of peritalar fracture dislocation of the talar body. Keywords: Peritalar dislocation, Talus fracture, Talar body fracture dislocation, Medial subtalar dislocation

Missing IUD Despite Threads at the Cervix

Directory of Open Access Journals (Sweden)

Andrew L. Atkinson

2014-01-01

Full Text Available Today, the intrauterine device (IUD is by far the most popular form of long term reversible contraception in the world. Side effects from the IUD are minimal and complications are rare. Uterine perforation and migration of the IUD outside the uterine cavity are the most serious complications. Physician visualization and/or the patient feeling retrieval threads at the cervical os are confirmation that the IUD has not been expelled or migrated. We present a case of a perforated, intraperitoneal IUD with threads noted at the cervical os. Office removal was not possible using gentle traction on the threads. Multiple imaging and endoscopic modalities were used to try and locate the IUD including pelvic ultrasound, diagnostic hysteroscopy, cystoscopy, and pelvic magnetic resonance imaging (MRI. The studies gave conflicting results on location of the IUD. Ultimately, the missing IUD was removed via laparoscopy.

The movement of screw dislocations in tungsten

International Nuclear Information System (INIS)

Tian Xiaogeng; Woo Chungho

2004-01-01

Using Acland potential for tungsten, the movement of 1/2a screw dislocation under shear stress was investigated by molecular dynamics simulation. Equilibrated core structure was obtained by relaxation of screw dislocation with proper boundary conditions. We found that the equilibrium dislocation core has three-fold symmetry and spread out in three direction on {1 1 0} planes. The screw dislocation core could not keep the original shape when the shear stress applied. The dislocation could not move until the shear stress became large enough. The dislocation moved in zigzag when the shear stress neared the Peierls stress. When the shear stress became larger, the dislocation moved in zigzag at the beginning and than moved almost in straight line in [2-bar11] direction. The large shear stress applied, the long distance moved before the dislocation stilled in z-direction and the large velocity in y-direction

Simulations of dislocations dynamics at a mesoscopic scale: a study of plastic flow

International Nuclear Information System (INIS)

Devincre, Benoit

1993-01-01

This work is concerned with the numerical modelling of the plastic flow of crystalline materials. A new simulation technique is proposed to simulate dislocation dynamics in two and three dimensions, in an isotropic elastic continuum. The space and time scales used (≅10 -6 m and 10 -9 s) allow to take into account the elementary properties of dislocations, their short and long range interactions, their collective properties as well as the slip geometry. This original method is able to reproduce the inherent heterogeneity of plastic flow, the self-organization properties of the dislocation microstructures and the corresponding mechanical properties. In two dimensions, the simulations of cyclic deformation lead to the formation of periodic arrays of dipolar dislocation walls. These configurations are examined and discussed. A phenomenological model is proposed which predicts their characteristic wavelength as a function of the applied stress and dislocation density. A striking resemblance between the simulated behaviour and experimental data is emphasized. In three dimensions, the simulations are more realistic and can directly be compared with the experimental data. They are, however, restricted to small plastic strains, of the order of 10 -3 . The properties examined and discussed are concerned with the forest model, the internal stress, which is shown to contribute to about 20 pc of the flow stress and the mechanisms of strain hardening in relation with the models of Friedel-Saada and Kocks. The investigation of the dislocation microstructures focusses on two essential ingredients for the occurrence of self-organization, the internal stress and the intersections of non coplanar dislocations. These results suggest that, to understand the strain hardening properties as well as the formation of dislocation cells during multiple slip, one must take into account the influence of local internal stresses and cross-slip on the mechanisms of areal glide. (author) [fr

GaN growth on silane exposed AlN seed layers

Energy Technology Data Exchange (ETDEWEB)

Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

2008-07-01

The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dependence of the length of solar filament threads on the magnetic configuration

International Nuclear Information System (INIS)

Zhou Yu-Hao; Chen Peng-Fei; Fang Cheng; Zhang Qing-Min

2014-01-01

High-resolution Hα observations indicate that filaments consist of an assembly of thin threads. In quiescent filaments, the threads are generally short, whereas in active region filaments, the threads are generally long. In order to explain these observational features, we performed one-dimensional radiative hydrodynamic simulations of filament formation along a dipped magnetic flux tube in the framework of the chromospheric evaporation-coronal condensation model. The geometry of a dipped magnetic flux tube is characterized by three parameters, i.e., the depth (D), the half-width (w) and the altitude (h) of the magnetic dip. A survey of the parameters in numerical simulations shows that when allowing the filament thread to grow in 5 days, the maximum length (L th ) of the filament thread increases linearly with w, and decreases linearly with D and h. The dependence is fitted into a linear function L th = 0.84w − 0.88D − 2.78h+17.31(Mm). Such a relation can qualitatively explain why quiescent filaments have shorter threads and active region filaments have longer threads

Traumatic hip dislocation: early MRI findings

International Nuclear Information System (INIS)

Laorr, A.; Greenspan, A.; Anderson, M.W.; Moehring, H.D.; McKinley, T.

1995-01-01

Objective of this study was to present the spectrum of early magnetic resonance imaging (MRI) findings following traumatic dislocation of the femoral head, and to identify any associated injuries. Prospective MRI of both hips was performed on 18 patients within 5 weeks of a traumatic femoral head dislocation. The interval between the time of injury and the imaging studies ranged from 2 to 35 days. Posterior dislocation was present in 14 patients and anterior dislocation in 4 patients. In the majority of cases, we performed axial T1, coronal T1, and coronal T2 * (MPGR) sequences. MRI can effectively identify and quantify the muscle injury and joint effusion that invariably accompany traumatic hip dislocations. It is also useful for demonstrating trabecular bone contusion (trabecular injury) and iliofemoral ligament injury, which occur commonly with acute hip dislocation. (orig./VHE)

Local Variability of the Peierls Barrier of Screw Dislocations in Ta-10W.

Energy Technology Data Exchange (ETDEWEB)

Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-10-01

It is well know that the addition of substitutional elements changes the mechanical behavior of metals, a effect referred to solid solution hardening. For body-centered-cubic (BCC) metals, screw dislocation play a key role in the mechanical properties. Here the detailed modification of the Peierls barrier for screw dislocation motion in Ta with W substitutional atoms is computing using density functional theory (DFT). A reduced order model (ROM) of the influence of W substitution on the Peierls barrier is developed. The mean field change in the Peierls barrier for a Ta10W alloy is determined and shown to be larger than anticipated based on simple elasticity considerations. The ROM could be used in future calculations to determine the local variability of the Peierls barrier and the resultant influence on the motion of screw dislocation in this alloy.

The mathematical model of thread unrolling from a bobbin

Directory of Open Access Journals (Sweden)

S. M. Tenenbaum

2014-01-01

Full Text Available I. Introduction The subject of research in this work is a process of thread unrolling from a bobbin. The mathematical model of this process considering motion of thread peace on a bobbin and unrolled peace is proposed. The dimension of system of differential equations for this model is constant during deploying.The relevance to simulate this process for design of Heliogyro-like solar sails (Heliogyro [1], BMSTU-Sail [2] is proved. The paper briefly characterizes a blade for such solar sail as a simulation object. It proves the possibility for using a flexible thread model for a long blade because of very small blade thickness (less than 10 μm [3] relative to blade width and the phenomena of Koriolis forces [4] that lead to buckling failure of blade flatness.The major features of the proposed model are:-- simulated as a motion of the thread piece both being on a bobbin and its unrolled peace;-- splitting a thread length into nodes does not depend on the demand to ensure a sufficient number of nodes on a single thread turn on the coil;-- because of avoiding a problem of contact between the thread and bobbin a stable integration of motion equations is provided by the conventional Runge-Kutta method of fourth order with a constant step [5];-- in the course of solution the number of freedom degrees (number of motion equation is constant, thereby simplifying a calculation algorithm.The closest mathematical model is proposed in [6].The scientific novelty of this research is the approach to solving the problem of unrolling thread from a bobbin using a constant number of motion equations while preserving real kinematics coiling process.II. Problem formulationIn this section the problem of unrolling thread with length L from a bobbin of radius r is posed while any kind of forces are acting on the unrolled peace of thread. Moreover, the law of bobbin rotation φ(t assumed to be known with the proviso that the model can be modified if φ(t is the result of

VoiceThread as a Peer Review and Dissemination Tool for Undergraduate Research

Science.gov (United States)

Guertin, L. A.

2012-12-01

VoiceThread has been utilized in an undergraduate research methods course for peer review and final research project dissemination. VoiceThread (http://www.voicethread.com) can be considered a social media tool, as it is a web-based technology with the capacity to enable interactive dialogue. VoiceThread is an application that allows a user to place a media collection online containing images, audio, videos, documents, and/or presentations in an interface that facilitates asynchronous communication. Participants in a VoiceThread can be passive viewers of the online content or engaged commenters via text, audio, video, with slide annotations via a doodle tool. The VoiceThread, which runs across browsers and operating systems, can be public or private for viewing and commenting and can be embedded into any website. Although few university students are aware of the VoiceThread platform (only 10% of the students surveyed by Ng (2012)), the 2009 K-12 edition of The Horizon Report (Johnson et al., 2009) lists VoiceThread as a tool to watch because of the opportunities it provides as a collaborative learning environment. In Fall 2011, eleven students enrolled in an undergraduate research methods course at Penn State Brandywine each conducted their own small-scale research project. Upon conclusion of the projects, students were required to create a poster summarizing their work for peer review. To facilitate the peer review process outside of class, each student-created PowerPoint file was placed in a VoiceThread with private access to only the class members and instructor. Each student was assigned to peer review five different student posters (i.e., VoiceThread images) with the audio and doodle tools to comment on formatting, clarity of content, etc. After the peer reviews were complete, the students were allowed to edit their PowerPoint poster files for a new VoiceThread. In the new VoiceThread, students were required to video record themselves describing their research

Gold thread implantation promotes hair growth in human and mice

OpenAIRE

Kim, Jong-Hwan; Cho, Eun-Young; Kwon, Euna; Kim, Woo-Ho; Park, Jin-Sung; Lee, Yong-Soon; Yun, Jun-Won; Kang, Byeong-Cheol

2017-01-01

Thread-embedding therapy has been widely applied for cosmetic purposes such as wrinkle reduction and skin tightening. Particularly, gold thread was reported to support connective tissue regeneration, but, its role in hair biology remains largely unknown due to lack of investigation. When we implanted gold thread and Happy Lift™ in human patient for facial lifting, we unexpectedly found an increase of hair regrowth in spite of no use of hair growth medications. When embedded into the depilated...

The influence of anisotropy on the core structure of Shockley partial dislocations within FCC materials

Science.gov (United States)

Szajewski, B. A.; Hunter, A.; Luscher, D. J.; Beyerlein, I. J.

2018-01-01

Both theoretical and numerical models of dislocations often necessitate the assumption of elastic isotropy to retain analytical tractability in addition to reducing computational load. As dislocation based models evolve towards physically realistic material descriptions, the assumption of elastic isotropy becomes increasingly worthy of examination. We present an analytical dislocation model for calculating the full dissociated core structure of dislocations within anisotropic face centered cubic (FCC) crystals as a function of the degree of material elastic anisotropy, two misfit energy densities on the γ-surface ({γ }{{isf}}, {γ }{{usf}}) and the remaining elastic constants. Our solution is independent of any additional features of the γ-surface. Towards this pursuit, we first demonstrate that the dependence of the anisotropic elasticity tensor on the orientation of the dislocation line within the FCC crystalline lattice is small and may be reasonably neglected for typical materials. With this approximation, explicit analytic solutions for the anisotropic elasticity tensor {B} for both nominally edge and screw dislocations within an FCC crystalline lattice are devised, and employed towards defining a set of effective isotropic elastic constants which reproduce fully anisotropic results, however do not retain the bulk modulus. Conversely, Hill averaged elastic constants which both retain the bulk modulus and reasonably approximate the dislocation core structure are employed within subsequent numerical calculations. We examine a wide range of materials within this study, and the features of each partial dislocation core are sufficiently localized that application of discrete linear elasticity accurately describes the separation of each partial dislocation core. In addition, the local features (the partial dislocation core distribution) are well described by a Peierls-Nabarro dislocation model. We develop a model for the displacement profile which depends upon

A Review of Lightweight Thread Approaches for High Performance Computing

Energy Technology Data Exchange (ETDEWEB)

Castello, Adrian; Pena, Antonio J.; Seo, Sangmin; Mayo, Rafael; Balaji, Pavan; Quintana-Orti, Enrique S.

2016-09-12

High-level, directive-based solutions are becoming the programming models (PMs) of the multi/many-core architectures. Several solutions relying on operating system (OS) threads perfectly work with a moderate number of cores. However, exascale systems will spawn hundreds of thousands of threads in order to exploit their massive parallel architectures and thus conventional OS threads are too heavy for that purpose. Several lightweight thread (LWT) libraries have recently appeared offering lighter mechanisms to tackle massive concurrency. In order to examine the suitability of LWTs in high-level runtimes, we develop a set of microbenchmarks consisting of commonlyfound patterns in current parallel codes. Moreover, we study the semantics offered by some LWT libraries in order to expose the similarities between different LWT application programming interfaces. This study reveals that a reduced set of LWT functions can be sufficient to cover the common parallel code patterns and that those LWT libraries perform better than OS threads-based solutions in cases where task and nested parallelism are becoming more popular with new architectures.

Conversation Threads Hidden within Email Server Logs

Science.gov (United States)

Palus, Sebastian; Kazienko, Przemysław

Email server logs contain records of all email Exchange through this server. Often we would like to analyze those emails not separately but in conversation thread, especially when we need to analyze social network extracted from those email logs. Unfortunately each mail is in different record and those record are not tided to each other in any obvious way. In this paper method for discussion threads extraction was proposed together with experiments on two different data sets - Enron and WrUT..

Kinematics of Planetary Roller Screw Mechanism considering Helical Directions of Screw and Roller Threads

Directory of Open Access Journals (Sweden)

Shangjun Ma

2015-01-01

Full Text Available Based on the differential principle of thread transmission, an analytical model considering helical directions between screw and roller threads in planetary roller screw mechanism (PRSM is presented in this work. The model is critical for the design of PRSM with a smaller lead and a bigger pitch to realize a higher transmission accuracy. The kinematic principle of planetary transmission is employed to analyze the PRSM with different screw thread and roller thread directions. In order to investigate the differences with different screw thread and roller thread directions, the numerical model is developed by using the software Adams to validate the analytical solutions calculated by the presented model. The results indicate, when the helical direction of screw thread is identical with the direction of roller thread, that the lead of PRSM is unaffected regardless of whether sliding between screw and rollers occurs or not. Only when the direction of screw thread is reverse to the direction of roller thread, the design of PRSM with a smaller lead can be realized under a bigger pitch. The presented models and numerical simulation method can be used to research the transmission accuracy of PRSM.

HRTEM studies of dislocations in cubic BN

International Nuclear Information System (INIS)

Nistor, L.C.; Tendeloo, G. van; Dinca, G.

2004-01-01

The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

HRTEM studies of dislocations in cubic BN

Energy Technology Data Exchange (ETDEWEB)

Nistor, L.C. [National Institute for Materials Physics, P.O. Box MG-7 Magurele, 077125 Bucharest (Romania); Tendeloo, G. van [University of Antwerp, EMAT, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Dinca, G. [Dacia Synthetic Diamond Factory, Timisoara av. 5, P.O. Box 58-52, 077350 Bucharest (Romania)

2004-09-01

The atomic structure of dislocations in cubic boron nitride has been investigated by high resolution transmission electron microscopy. Most of the perfect dislocations, screw and 60 edge, are dissociated. A 60 dislocation which was undissociated has been analysed. Computer simulation is performed in an attempt to characterise the core structure. Twinning dislocations and dislocations resulting from the intersection of stacking faults are also revealed. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Rules for Forest Interactions between Dislocations

International Nuclear Information System (INIS)

Wickham, L. K.; Schwarz, K. W.; Stoelken, J. S.

1999-01-01

The dynamical interactions of dislocations existing on intersecting glide planes have been investigated using numerical simulations based on isotropic linear elastic theory. It is found that such dislocations either repel, attract and form growing junctions, or attract and form bound crossed states. Which of these occurs can be predicted from a surprisingly simple analysis of the initial configurations. The outcome is determined primarily by the angles which the dislocations initially make with the glide-plane intersection edge, and is largely independent of the initial distance between the dislocations, their initial curvature, or ambient applied stresses. The results provide a rule for dealing with forest interactions within the context of large multiple-dislocation computations. (c) 1999 The American Physical Society

Evolution of dislocation structures following a change in loading conditions studied by in situ high resolution reciprocal space mapping

DEFF Research Database (Denmark)

Wejdemann, Christian

or to a strain of 7% at a temperature of -196 ○C, and the samples were characterized by electron microscopy and mechanical tests. Transmission electron microscopy showed that the pre-deformation produced a characteristic dislocation cell structure consisting of regions with relatively high dislocation density...... the pre-deformation axis. In the X-ray diffraction experiments a technique was employed with which it is possible to obtain high-resolution reciprocal space maps from individual bulk grains. The high-resolution reciprocal space maps contain features related to the dislocation structure in the grains......: A spread-out ‘cloud’ of low intensity caused by diffraction from the dislocation walls and a number of sharp peaks of high intensity caused by diffraction from the individual subgrains. By acquiring reciprocal space maps at a number of different strain levels the evolution of the dislocation structures can...

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Guangming; Zhou, Zhangjian; Mo, Kun; Miao, Yinbin; Liu, Xiang; Almer, Jonathan; Stubbins, James F.

2015-12-01

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ Xray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 C, while the screw type dislocations dominate at 600 C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 C may be explained by the activated cross slip of screw segments.

Loosening and damage mechanism of thread-joined structures in nuclear power equipment

International Nuclear Information System (INIS)

Tang Hui

1999-01-01

The author proposes a loosening mechanism of thread-joined structures under vibrate environments in the nuclear power equipment and structures, which is on the base of the macro and imperceptible-mechanics analysis. It has answered the problems on the seizing, the adhesive wearing, the generation of cracks, the thread-tooth fracture. So it has a conclusion that the loosening of thread-joined structures is essential trend, in other words, the locking property of thread-pair is failure under vibrate environments

Effects of dislocations on electron channeling

International Nuclear Information System (INIS)

George, Juby; Pathak, A P

2009-01-01

The phenomenon of electron channeling in a crystal affected by dislocations is considered. Earlier we had considered the quantum aspects of the positron channeling in a crystal bent by dislocations where the effects of longitudinal motion of the particle were also considered along with the transverse motion. In this paper, the effective potential for the electron case is found for the two regions of dislocation-affected channel. There is considerable shift in the potential minima due to dislocations. The frequency and the corresponding spectrum of the channeling radiation due to electrons channeling through the perfect channel and the two regions of dislocation-affected channels are calculated. The spectral distribution of radiation intensity changes with the parameters of dislocation. The continuity of wavefunctions and their derivatives is used at the three boundaries and the reflection and transmission coefficients are found using these boundary conditions in the same way as in the positron case.

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yuan, Shu; Liu, Yingce [Quantum Wafer Inc., Foshan 528251 (China); Guo, L. Jay [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Sheng, E-mail: victor_liu63@126.com [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); Ding, Han [State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

2015-11-15

Graphical abstract: - Highlights: • TEM is used to characterize threading dislocation existing in GaN epitaxial layer. • Effect of threading dislocation on optical and electrical of LEDs is discussed. • Strip-shaped SiO{sub 2} DCBL is designed to improve current spreading performance of LEDs. - Abstract: We demonstrated that the improvement in optical and electrical performance of high power LEDs was achieved using cone-shaped patterned sapphire substrate (PSS) and strip-shaped SiO{sub 2} distributed current blocking layer (DCBL). We found through transmission electron microscopy (TEM) observation that densities of both the screw dislocation and edge dislocation existing in GaN epitaxial layer grown on PSS were much less than that of GaN epitaxial layer grown on flat sapphire substrate (FSS). Compared to LED grown on FSS, LED grown on PSS showed higher sub-threshold forward-bias voltage and lower reverse leakage current, resulting in an enhancement in device reliability. We also designed a strip-shaped SiO{sub 2} DCBL beneath a strip-shaped p-electrode, which prevents the current from being concentrated on regions immediately adjacent the strip-shaped p-electrode, thereby facilitating uniform current spreading into the active region. By implementing strip-shaped SiO{sub 2} DCBL, light output power of high power PSS-LED chip could be further increased by 13%.

Energy flow around a moving dislocation

International Nuclear Information System (INIS)

Koizumi, H; Kirchner, H O K

2009-01-01

A dislocation moving in a lattice emits lattice waves. We study the energy flow accompanying the lattice wave emission in a molecular dynamics situation. About two thirds of the static free energy are emitted as lattice waves from the moving dislocation. Work done by the region around the dislocation helps to initiate the motion from the unstable equilibrium state under a small applied stress, or to compensate the energy emitted as lattice waves when the dislocation makes a long distance motion under a larger stress.

Atomistic simulations of dislocation processes in copper

DEFF Research Database (Denmark)

Vegge, T.; Jacobsen, K.W.

2002-01-01

We discuss atomistic simulations of dislocation processes in copper based on effective medium theory interatomic potentials. Results on screw dislocation structures and processes are reviewed with particular focus on point defect mobilities and processes involving cross slip. For example......, the stability of screw dislocation dipoles is discussed. We show that the presence of jogs will strongly influence cross slip barriers and dipole stability. We furthermore present some new results on jogged edge dislocations and edge dislocation dipoles. The jogs are found to be extended, and simulations...

Exploiting Thread Parallelism for Ocean Modeling on Cray XC Supercomputers

Energy Technology Data Exchange (ETDEWEB)

Sarje, Abhinav [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Jacobsen, Douglas W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Williams, Samuel W. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Ringler, Todd [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Oliker, Leonid [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-05-01

The incorporation of increasing core counts in modern processors used to build state-of-the-art supercomputers is driving application development towards exploitation of thread parallelism, in addition to distributed memory parallelism, with the goal of delivering efficient high-performance codes. In this work we describe the exploitation of threading and our experiences with it with respect to a real-world ocean modeling application code, MPAS-Ocean. We present detailed performance analysis and comparisons of various approaches and configurations for threading on the Cray XC series supercomputers.

Argobots: A Lightweight Low-Level Threading and Tasking Framework

Energy Technology Data Exchange (ETDEWEB)

Seo, Sangmin; Amer, Abdelhalim; Balaji, Pavan; Bordage, Cyril; Bosilca, George; Brooks, Alex; Carns, Philip; Castello, Adrian; Genet, Damien; Herault, Thomas; Iwasaki, Shintaro; Jindal, Prateek; Kale, Laxmikant V.; Krishnamoorthy, Sriram; Lifflander, Jonathan; Lu, Huiwei; Meneses, Esteban; Snir, Marc; Sun, Yanhua; Taura, Kenjiro; Beckman, Pete

2018-03-01

In the past few decades, a number of user-level threading and tasking models have been proposed in the literature to address the shortcomings of OS-level threads, primarily with respect to cost and flexibility. Current state-of-the-art user-level threading and tasking models, however, either are too specific to applications or architectures or are not as powerful or flexible. In this paper, we present Argobots, a lightweight, low-level threading and tasking framework that is designed as a portable and performant substrate for high-level programming models or runtime systems. Argobots offers a carefully designed execution model that balances generality of functionality with providing a rich set of controls to allow specialization by end users or high-level programming models. We describe the design, implementation, and performance characterization of Argobots and present integrations with three high-level models: OpenMP, MPI, and colocated I/O services. Evaluations show that (1) Argobots, while providing richer capabilities, is competitive with existing simpler generic threading runtimes; (2) our OpenMP runtime offers more efficient interoperability capabilities than production OpenMP runtimes do; (3) when MPI interoperates with Argobots instead of Pthreads, it enjoys reduced synchronization costs and better latency-hiding capabilities; and (4) I/O services with Argobots reduce interference with colocated applications while achieving performance competitive with that of a Pthreads approach.

Argobots: A Lightweight Low-Level Threading and Tasking Framework

International Nuclear Information System (INIS)

Seo, Sangmin; Amer, Abdelhalim; Balaji, Pavan; Bordage, Cyril; Bosilca, George

2017-01-01

In the past few decades, a number of user-level threading and tasking models have been proposed in the literature to address the shortcomings of OS-level threads, primarily with respect to cost and flexibility. Current state-of-the-art user-level threading and tasking models, however, are either too specific to applications or architectures or are not as powerful or flexible. In this article, we present Argobots, a lightweight, low-level threading and tasking framework that is designed as a portable and performant substrate for high-level programming models or runtime systems. Argobots offers a carefully designed execution model that balances generality of functionality with providing a rich set of controls to allow specialization by the user or high-level programming model. Here, we describe the design, implementation, and optimization of Argobots and present integrations with three example high-level models: OpenMP, MPI, and co-located I/O service. Evaluations show that (1) Argobots outperforms existing generic threading runtimes; (2) our OpenMP runtime offers more efficient interoperability capabilities than production OpenMP runtimes do; (3) when MPI interoperates with Argobots instead of Pthreads, it enjoys reduced synchronization costs and better latency hiding capabilities; and (4) I/O service with Argobots reduces interference with co-located applications, achieving performance competitive with that of the Pthreads version.

X-ray measurement of residual stress on bolt threads

International Nuclear Information System (INIS)

Hagiwara, Masaya; Nakahara, Kanefumi; Yoshimoto, Isamu.

1989-01-01

This study deals with X-ray measurement of residual stress at the local area around the thread root of a bolt. Residual stress in the 0.5 mm x 5 mm area was measured using a method of stepped scanning and parabolic approximation. The conditions of measurement had been determined and evaluated through the preliminary measurement of compressive stress acting on the cylindrical surface. Furthermore, the fatigue strength estimated by applying the residual stress data to the previously presented hypothesis was compared with the experimental results. The main conclusions obtained were as follows: (1) The residual stress in a relatively small area on the cylindrical surface with large curvature can be measured by X-ray using a method of stepped scanning and parabolic approximation; (2) The compressive residual stress measured at the thread root was larger for the bolt manufactured by thread rolling after heat treatment than for one manufactured by thread rolling before heat treatment; (3) The distribution of residual stress along the axial direction from the thread root to the portion under crest did not represent remarkable change in its value; (4) The residual stress of a bolt was somewhat decreased by fatigue loading on the condition of low mean stress; (5) The fatigue strength estimated using residual stress data showed the tendency of experimental results well. (author)

Neglected locked vertical patellar dislocation

Science.gov (United States)

Gupta, Rakesh Kumar; Gupta, Vinay; Sangwan, Sukhbir Singh; Kamboj, Pradeep

2012-01-01

Patellar dislocations occurring about the vertical and horizontal axis are rare and irreducible. The neglected patellar dislocation is still rarer. We describe the clinical presentation and management of a case of neglected vertical patellar dislocation in a 6 year-old boy who sustained an external rotational strain with a laterally directed force to his knee. Initially the diagnosis was missed and 2 months later open reduction was done. The increased tension generated by the rotation of the lateral extensor retinaculum kept the patella locked in the lateral gutter even with the knee in full extension. Traumatic patellar dislocation with rotation around a vertical axis has been described earlier, but no such neglected case has been reported to the best of our knowledge. PMID:23162154

Neglected locked vertical patellar dislocation

Directory of Open Access Journals (Sweden)

Rakesh Kumar Gupta

2012-01-01

Full Text Available Patellar dislocations occurring about the vertical and horizontal axis are rare and irreducible. The neglected patellar dislocation is still rarer. We describe the clinical presentation and management of a case of neglected vertical patellar dislocation in a 6 year-old boy who sustained an external rotational strain with a laterally directed force to his knee. Initially the diagnosis was missed and 2 months later open reduction was done. The increased tension generated by the rotation of the lateral extensor retinaculum kept the patella locked in the lateral gutter even with the knee in full extension. Traumatic patellar dislocation with rotation around a vertical axis has been described earlier, but no such neglected case has been reported to the best of our knowledge.

Dislocation based controlling of kinematic hardening contribution to simulate primary and secondary stages of uniaxial ratcheting

Science.gov (United States)

Bhattacharjee, S.; Dhar, S.; Acharyya, S. K.

2017-07-01

The primary and secondary stages of the uniaxial ratcheting curve for the C-Mn steel SA333 have been investigated. Stress controlled uniaxial ratcheting experiments were conducted with different mean stresses and stress amplitudes to obtain curves showing the evolution of ratcheting strain with number of cycles. In stage-I of the ratcheting curve, a large accumulation of ratcheting strain occurs, but at a decreasing rate. In contrast, in stage-II a smaller accumulation of ratcheting strain is found and the ratcheting rate becomes almost constant. Transmission electron microscope observations reveal that no specific dislocation structures are developed during the early stages of ratcheting. Rather, compared with the case of low cycle fatigue, it is observed that sub-cell formation is delayed in the case of ratcheting. The increase in dislocation density as a result of the ratcheting strain is obtained using the Orowan equation. The ratcheting strain is obtained from the shift of the plastic strain memory surface. The dislocation rearrangement is incorporated in a functional form of dislocation density, which is used to calibrate the parameters of a kinematic hardening law. The observations are formulated in a material model, plugged into the ABAQUS finite element (FE) platform as a user material subroutine. Finally the FE-simulated ratcheting curves are compared with the experimental curves.

Geant4-MT: bringing multi-threading into Geant4 production

International Nuclear Information System (INIS)

Ahn, S.; Apostolakis, J.; Cosmo, G.; Nowak, A.; Asai, M.; Brandt, D.; Dotti, A.; Coopermann, G.; Dong, X.; Jun, Soon Yung

2013-01-01

Geant4-MT is the multi-threaded version of the Geant4 particle transport code. The key goals for the design of Geant4-MT have been a) the need to reduce the memory footprint of the multi-threaded application compared to the use of separate jobs and processes; b) to create an easy migration of the existing applications; and c) to use efficiently many threads or cores, by scaling up to tens and potentially hundreds of workers. The first public release of a Geant4- MT prototype was made in 2011. We report on the revision of Geant4-MT for inclusion in the production-level release scheduled for end of 2013. This has involved significant re-engineering of the prototype in order to incorporate it into the main Geant4 development line, and the porting of Geant4-MT threading code to additional platforms. In order to make the porting of applications as simple as possible, refinements addressed the needs of standalone applications. Further adaptations were created to improve the fit with the frameworks of High Energy Physics experiments. We report on performances measurements on Intel Xeon TM , AMD Opteron TM the first trials of Geant4-MT on the Intel Many Integrated Cores (MIC) architecture, in the form of the Xeon Phi TM co-processor. These indicate near-linear scaling through about 200 threads on 60 cores, when holding fixed the number of events per thread. (authors)

Mechanical Strength Improvements of Carbon Nanotube Threads through Epoxy Cross-Linking

Directory of Open Access Journals (Sweden)

Qingyue Yu

2016-01-01

Full Text Available Individual Carbon Nanotubes (CNTs have a great mechanical strength that needs to be transferred into macroscopic fiber assemblies. One approach to improve the mechanical strength of the CNT assemblies is by creating covalent bonding among their individual CNT building blocks. Chemical cross-linking of multiwall CNTs (MWCNTs within the fiber has significantly improved the strength of MWCNT thread. Results reported in this work show that the cross-linked thread had a tensile strength six times greater than the strength of its control counterpart, a pristine MWCNT thread (1192 MPa and 194 MPa, respectively. Additionally, electrical conductivity changes were observed, revealing 2123.40 S·cm−1 for cross-linked thread, and 3984.26 S·cm−1 for pristine CNT thread. Characterization suggests that the obtained high tensile strength is due to the cross-linking reaction of amine groups from ethylenediamine plasma-functionalized CNT with the epoxy groups of the cross-linking agent, 4,4-methylenebis(N,N-diglycidylaniline.

Athermal mechanisms of size-dependent crystal flow gleaned from three-dimensional discrete dislocation simulations

International Nuclear Information System (INIS)

Rao, S.I.; Dimiduk, D.M.; Parthasarathy, T.A.; Uchic, M.D.; Tang, M.; Woodward, C.

2008-01-01

Recent experimental studies have revealed that micrometer-scale face-centered cubic (fcc) crystals show strong strengthening effects, even at high initial dislocation densities. We use large-scale three-dimensional discrete dislocation simulations (DDS) to explicitly model the deformation behavior of fcc Ni microcrystals in the size range of 0.5-20 μm. This study shows that two size-sensitive athermal hardening processes, beyond forest hardening, are sufficient to develop the dimensional scaling of the flow stress, stochastic stress variation, flow intermittency and high initial strain-hardening rates, similar to experimental observations for various materials. One mechanism, source-truncation hardening, is especially potent in micrometer-scale volumes. A second mechanism, termed exhaustion hardening, results from a breakdown of the mean-field conditions for forest hardening in small volumes, thus biasing the statistics of ordinary dislocation processes

METHODS OF CONTROLLING THE AVERAGE DIAMETER OF THE THREAD WITH ASYMMETRICAL PROFILE

Directory of Open Access Journals (Sweden)

L. M. Aliomarov

2015-01-01

Full Text Available To handle the threaded holes in hard materials made of marine machinery, operating at high temperatures, heavy loads and in aggressive environments, the authors have developed the combined tool core drill -tap with a special cutting scheme, which has an asymmetric thread profile on the tap part. In order to control the average diameter of the thread of tap part of the combined tool was used the method three wires, which allows to make continuous measurement of the average diameter of the thread along the entire profile. Deviation from the average diameter from the sample is registered by inductive sensor and is recorded by the recorder. In the work are developed and presented control schemes of the average diameter of the threads with a symmetrical and asymmetrical profile. On the basis of these schemes are derived formulas for calculating the theoretical option to set the wires in the thread profile in the process of measuring the average diameter. Conducted complex research and the introduction of the combined instrument core drill-tap in the production of products of marine engineering, shipbuilding, ship repair power plants made of hard materials showed a high efficiency of the proposed technology for the processing of high-quality small-diameter threaded holes that meet modern requirements.

Sink efficiency calculation of dislocations in irradiated materials by phase-field modelling

International Nuclear Information System (INIS)

Rouchette, Adrien

2015-01-01

The aim of this work is to develop a modelling technique for diffusion of crystallographic migrating defects in irradiated metals and absorption by sinks to better predict the microstructural evolution in those materials.The phase field technique is well suited for this problem, since it naturally takes into account the elastic effects of dislocations on point defect diffusion in the most complex cases. The phase field model presented in this work has been adapted to simulate the generation of defects by irradiation and their absorption by the dislocation cores by means of a new order parameter associated to the sink morphology. The method has first been validated in different reference cases by comparing the sink strengths obtained numerically with analytical solutions available in the literature. Then, the method has been applied to dislocations with different orientations in zirconium, taking into account the anisotropic properties of the crystal and point defects, obtained by state-of-the-art atomic calculations.The results show that the shape anisotropy of the point defects promotes the vacancy absorption by basal loops, which is consistent with the experimentally observed zirconium growth under irradiation. Finally, the rigorous investigation of the dislocation loop case proves that phase field simulations give more accurate results than analytical solutions in realistic loop density ranges. (author)

Contribution to the study of screw dislocations; Contribution a l'etude des dislocations helicoidales

Energy Technology Data Exchange (ETDEWEB)

Grilhe, J [Commissariat a l' Energie Atomique, Fontenay aux Roses (France). Centre d' Etudes Nucleaires

1965-03-01

The aim of this work is to study the germination, growth and properties of screw dislocations. In the introduction (first chapter), we describe briefly the main experimental results obtained by various authors (observations of screws by Amelinckx and Bontinck in ionic crystals, by Dash in silicon crystals and by Thomas and Whelan in aluminium based alloys). We then make a few considerations concerning characteristic geometry of screws and the various methods used for calculating the energy of a dislocation. In the second chapter we study the problems involving only slip of the screw around its cylinder. We calculate the equilibrium step as a function of the forces acting on the extremities. We determine the critical stress required to disrupt the screw and study the interactions between the screw and other dislocations of the lattice. In the third chapter we consider the problem of the stability when the dislocation can climb by absorption or emission of vacancies. We study separately the stability of the size which only involves volume diffusion and the stability of the shape which depends only on the rearrangement of the vacancies along the dislocation. In chapter four we put forward a germination model for the screws: since the vacancies are not absorbed by the screw dislocations, they form clusters which take up a spiral form. The formation of these spirals is studied from the geometrical point of view in face-centered cubic systems. In chapter five we make use of the results obtained in chapters two and three for studying the growth of the spirals. (author) [French] Le but de ce travail est d'etudier la germination, la croissance et les proprietes des dislocations helico ales. Dans l'introduction (premier chapitre), nous exposons brievement les principaux resultats experimentaux obtenus par differents auteurs (observations d'helice par Amelinckx et Bontinck dans les cristaux ioniques, par Dash dans des cristaux de silicium et par Thomas et Whelan dans des

Atomistic simulation of hydrogen dynamics near dislocations in vanadium hydrides

International Nuclear Information System (INIS)

Ogawa, Hiroshi

2015-01-01

Highlights: • Hydrogen–dislocation interaction was simulated by molecular dynamics method. • Different distribution of H atoms were observed at edge and screw dislocation. • Planner distribution of hydrogen may be caused by partialized edge dislocation. • Hydrogen diffusivity was reduced in both edge and screw dislocation models. • Pipe diffusion was observed for edge dislocation but not for screw dislocation. - Abstract: Kinetics of interstitial hydrogen atoms near dislocation cores were analyzed by atomistic simulation. Classical molecular dynamics method was applied to model structures of edge and screw dislocations in α-phase vanadium hydride. Simulation showed that hydrogen atoms aggregate near dislocation cores. The spatial distribution of hydrogen has a planner shape at edge dislocation due to dislocation partialization, and a cylindrical shape at screw dislocation. Simulated self-diffusion coefficients of hydrogen atoms in dislocation models were a half- to one-order lower than that of dislocation-free model. Arrhenius plot of self-diffusivity showed slightly different activation energies for edge and screw dislocations. Directional dependency of hydrogen diffusion near dislocation showed high and low diffusivity along edge and screw dislocation lines, respectively, hence so called ‘pipe diffusion’ possibly occur at edge dislocation but does not at screw dislocation

Atraumatic Anterior Dislocation of the Hip Joint

Directory of Open Access Journals (Sweden)

Tadahiko Ohtsuru

2015-01-01

Full Text Available Dislocation of the hip joint in adults is usually caused by high-energy trauma such as road traffic accidents or falls from heights. Posterior dislocation is observed in most cases. However, atraumatic anterior dislocation of the hip joint is extremely rare. We present a case of atraumatic anterior dislocation of the hip joint that was induced by an activity of daily living. The possible causes of this dislocation were anterior capsule insufficiency due to developmental dysplasia of the hip, posterior pelvic tilt following thoracolumbar kyphosis due to vertebral fracture, and acetabular anterior coverage changes by postural factor. Acetabular anterior coverage changes in the sagittal plane were measured using a tomosynthesis imaging system. This system was useful for elucidation of the dislocation mechanism in the present case.

Subgrain and dislocation structure changes in hot-deformed high-temperature Fe-Ni austenitic alloy

Energy Technology Data Exchange (ETDEWEB)

Ducki, K.J.; Rodak, K.; Hetmanczyk, M.; Kuc, D

2003-08-28

The influence of plastic deformation on the substructure of a high-temperature austenitic Fe-Ni alloy has been presented. Hot-torsion tests were executed at constant strain rates of 0.1 and 1.0 s{sup -1}, at testing temperatures in the range 900-1150 deg. C. The examination of the microstructure was carried out, using transmission electron microscopy. Direct measurements on the micrographs allowed the calculation of structural parameters: the average subgrain area, and the mean dislocation density. A detailed investigation has shown that the microstructure is inhomogeneous, consisting of dense dislocation walls, subgrains and recrystallized regions.

Subgrain and dislocation structure changes in hot-deformed high-temperature Fe-Ni austenitic alloy

International Nuclear Information System (INIS)

Ducki, K.J.; Rodak, K.; Hetmanczyk, M.; Kuc, D.

2003-01-01

The influence of plastic deformation on the substructure of a high-temperature austenitic Fe-Ni alloy has been presented. Hot-torsion tests were executed at constant strain rates of 0.1 and 1.0 s -1 , at testing temperatures in the range 900-1150 deg. C. The examination of the microstructure was carried out, using transmission electron microscopy. Direct measurements on the micrographs allowed the calculation of structural parameters: the average subgrain area, and the mean dislocation density. A detailed investigation has shown that the microstructure is inhomogeneous, consisting of dense dislocation walls, subgrains and recrystallized regions

Internal stresses, dislocation mobility and ductility

Science.gov (United States)

Saada, G.

1991-06-01

The description of plastic deformation must take into account individual mechanisms and heterogeneity of plastic strain. Influence of dislocation interaction with forest dislocations and of cross slip are connected with the organization of dipole walls. The latter are described and their development is explained as a consequence of edge effects. Applications are discussed. La description de la déformation plastique doit prendre en compte les interactions individuelles des dislocations et l'hétérogénéité à grande échelle de la déformation plastique. Les interactions des dislocations mobiles avec la forêt de dislocations, le glissement dévié, ont pour effet la création de parois dipolaires. Celles-ci sont décrites et leur développement est appliqué à partir des effets de bord.

New insights into microstructural evolution of epitaxial Ni-Mn-Ga films on MgO (1 0 0) substrate by high-resolution X-ray diffraction and orientation imaging investigations

Science.gov (United States)

Sharma, Amit; Mohan, Sangeneni; Suwas, Satyam

2018-04-01

In this work, a detailed investigation has been performed on hetero-epitaxial growth and microstructural evolution in highly oriented Ni-Mn-Ga (1 0 0) films grown on MgO (1 0 0) substrate using high-resolution X-ray diffraction and orientation imaging microscopy. Mosaicity of the films has been analysed in terms of tilt angle, twist angle, lateral and vertical coherence length and threading dislocation densities by performing rocking curve measurements and reciprocal space mapping. Density of edge dislocations is found to be an order of magnitude higher than the density of screw dislocations, irrespective of film thickness. X-ray pole figure measurements have revealed an orientation relationship of ? || (1 0 0)MgO; ? || [0 0 1]MgO between the film and substrate. Microstructure predicted by X-ray diffraction is in agreement with that obtained from electron microscopy and atomic force microscopy. The evolution of microstructure in the film with increasing thickness has been explained vis-à-vis dislocation generation and growth mechanisms. Orientation imaging microscopy observations indicate evolutionary growth of film by overgrowth mechanism. Decrease in coercivity with film thickness has been explained as an interplay between stress field developed due to crystal defects and magnetic domain pinning due to surface roughness.

Study the Possibility for Manufacturing a Conical Pipe Thread by Expansion

Directory of Open Access Journals (Sweden)

S. A. Evsyukov

2014-01-01

Full Text Available The experience of operating oil wells showed that the weak point of tubing is a connecting thread.Currently, the pipe thread of the specified class is made using the technology of cutting. The process of cutting a thread leads to waste metal chips and cutting fibers. Therefore the idea arose to make a thread by the method of pressure shaping.The aim was to study the possibility for full filling of the threaded matrix profile.The study was conducted by means of mathematical modeling in the software complex DEFORM. The impact of technological and geometrical factors on the process of form change was in detail analyzed. Thus, a work-piece material was specified to be continuous, isotropic, homogeneous, viscous-plastic and a tool material was set as a hard one. The friction was speci-fied according to Prandtl-Siebel law with the friction factor of 0.3. The thread profile has been replaced by the annular grooves of the similar profile. The task was considered to be axisymmetric.Scientific novelty of received results consists in revealed regularities of the plastic de-formation process of the work-piece when forming a profile of the conical thread on the pipe in the process of its expansion with a conical punch.The simulation allowed us to obtain information about the stress-strain state of the work-piece and tool, about the nature of the metal flow during deformation, and about the strength parameters of the process.In particular, it was found that the work-piece metal is displaced along the pipe axis both in punch movement direction and in the opposite one. Thus, a mechanical end burr is formed. The article shows that to remove a mechanical end burr requires insertion of extra limit stop housing. The article also analyses distribution of stresses arising in the matrix at the final moment of deformation. It was proved that the highest stresses occur in the hollows of the threaded part of matrix. Thus, their absolute value does not exceed 470 MPa that

Measurement of probability distributions for internal stresses in dislocated crystals

Energy Technology Data Exchange (ETDEWEB)

Wilkinson, Angus J.; Tarleton, Edmund; Vilalta-Clemente, Arantxa; Collins, David M. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Jiang, Jun; Britton, T. Benjamin [Department of Materials, Imperial College London, Royal School of Mines, Exhibition Road, London SW7 2AZ (United Kingdom)

2014-11-03

Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

Ultrasonic Study of Dislocation Dynamics in Lithium -

Science.gov (United States)

Han, Myeong-Deok

1987-09-01

Experimental studies of dislocation dynamics in LiF single crystals, using ultrasonic techniques combined with dynamic loading, were performed to investigate the time evolution of the plastic deformation process under a short stress pulse at room temperature, and the temperature dependence of the dislocation damping mechanism in the temperature range 25 - 300(DEGREES)K. From the former, the time dependence of the ultrasonic attenuation was understood as resulting from dislocation multiplication followed by the evolution of mobile dislocations to immobile ones under large stress. From the latter, the temperature dependence of the ultrasonic attenuation was interpreted as due to the motion of the dislocation loops overcoming the periodic Peierls potential barrier in a manner analogous to the motion of a thermalized sine-Gordon chain under a small stress. The Peierls stress obtained from the experimental results by application of Seeger's relaxation model with exponential dislocation length distribution was 4.26MPa, which is consistent with the lowest stress for the linear relation between the dislocation velocity and stress observed by Flinn and Tinder.

An experimental study of dislocation loop nucleation

International Nuclear Information System (INIS)

Bounaud, J.Y.; Leteurtre, J.

1975-01-01

The nucleation of dislocation loops is experimentally studied by observing the demixion of the Burgers vectors of dislocation loops nucleated in copper whiskers irradiated in flexion by fission fragments at room temperature. The demixion of Burgers vectors is observed by the dimensional effects of dislocation loops: after irradiation, the applied stress is removed; the whisker shows a residual strain that is due to loops because, after an annealing treatment to evaporate dislocation loops, each whisker recovers its initial straight shape. Everywhere along the whisker, the radius of curvature is measured and plotted vs the max. applied stress. Estimations of the interstitial and vacancy dislocation loop nuclei are derived [fr

Representation of dislocation cores using Nye tensor distributions

International Nuclear Information System (INIS)

Hartley, Craig S.; Mishin, Y.

2005-01-01

This paper demonstrates how the cores of atomistically simulated dislocations in Cu and Al can be represented by a distribution of infinitesimal dislocations described by appropriate components of the Nye tensor. Components calculated from atomic positions in the dislocated crystal are displayed as contour plots on the plane normal to the dislocation line. The method provides an accurate and instructive means for characterizing dislocation core structures and calculating the total Burgers vector

A microfluidic glucose sensor incorporating a novel thread-based electrode system.

Science.gov (United States)

Gaines, Michelle; Gonzalez-Guerrero, Maria Jose; Uchida, Kathryn; Gomez, Frank A

2018-05-01

An electrochemical sensor for the detection of glucose using thread-based electrodes and fabric is described. This device is relatively simple to fabricate and can be used for multiple readings after washing with ethanol. The fabrication of the chip consisted of two steps. First, three thread-based electrodes (reference, working, and counter) were fabricated by painting pieces of nylon thread with either layered silver ink and carbon ink or silver/silver chloride ink. The threads were then woven into a fabric chip with a beeswax barrier molded around the edges in order to prevent leaks from the tested solutions. A thread-based working electrode consisting of one layer of silver underneath two layers of carbon was selected to fabricate the final sensor system. Using the chip, a PBS solution containing glucose oxidase (GOx) (10 mg/mL), potassium ferricyanide (K 3 [Fe(CN) 6 ]) (10 mg/mL) as mediator, and different concentrations of glucose (0-25 mM), was measured by cyclic voltammetry (CV). It was found that the current output from the oxidation of glucose was proportional to the glucose concentrations. This thread-based electrode system is a viable sensor platform for detecting glucose in the physiological range. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Structure of the Dislocation in Sapphire

DEFF Research Database (Denmark)

Bilde-Sørensen, Jørgen; Thölen, A. R.; Gooch, D. J.

1976-01-01

Experimental evidence of the existence of 01 0 dislocations in the {2 0} prism planes in sapphire has been obtained by transmission electron microscopy. By the weak-beam technique it has been shown that the 01 0 dislocations may dissociate into three partials. The partials all have a Burgers vector...... of ⅓ 01 0 and are separated by two identical faults. The distance between two partials is in the range 75-135 Å, corresponding to a fault energy of 320±60 mJ/m2. Perfect 01 0 dislocations have also been observed. These dislocations exhibited either one or two peaks when imaged in the (03 0) reflection...

Mechanisms operating during plastic deformation of metals under concurrent production of cascades and dislocations

International Nuclear Information System (INIS)

Trinkaus, H.; Singh, B.N.

2008-04-01

Recent in-reactor tensile tests (IRTs) on pure copper have revealed a deformation behaviour which is significantly different from that observed in post-irradiation tensile tests (PITs). In IRTs, the material deforms uniformly and homogeneously without yield drop and plastic instability as commonly observed in PITs. An increase in the pre-yield dose results in an increase in the level of hardening over the whole test periods and a decrease in the uniform elongation suggesting that the materials 'remember' the impact of the pre-yield damage level. These features are modelled in terms of the decoration of dislocations with glissile dislocation loops. During pre-yield irradiation, dislocation decoration is due to the one-dimensional (1D) diffusion of cascade induced self-interstitial (SIA) clusters and their trapping in the stress field of the static grown-in dislocations. During post-yield irradiation and deformation, moving dislocations are decorated by the sweeping of matrix loops. The interaction of dislocations with loops and between loops is discussed as a function of the relevant parameters. On this basis, the kinetics of decoration is treated in terms of fluxes of loops to and reactions with each other in a conceived 2D space of decoration. In this space, loop coalescence, alignment and mutual blocking reactions are characterised by appropriate reaction cross sections. In the kinetic equations for 'dynamic decoration' under deformation, the evolution of the dislocation density is taken into account. Simple solutions of the kinetic equations are discussed. The apparent memory of the system for the pre-yield dose is identified as the result of simultaneous and closely parallel transient evolutions of the cascade damage and the dislocations up to the end of the IRTs. The contributions of dislocation decoration to yield and flow stresses are attributed to the interaction of dislocations with aligned loops temporarily or permanently immobilized by other loops or

Dislocation of jaws

International Nuclear Information System (INIS)

Katzberg, R.W.; Hayakawa, K.; Anderson, Q.N.; Manzione, J.V.; Helms, C.A.; Tallents, R.

1984-01-01

Pluri-directional tomographic and arthrotomographic findings are described in six patients with dislocation of the jaw severe enough to require medical assistance. A grooved defect along the posterior aspect of the condylar head was noted in two of the six patients. The arthrotomographic findings that were obtained in one patient that was dislocated at the time of the arthrogram did not suggest a meniscocondyle incoordination as a mechanism. However, arthrotomographic findings in the six reported cases suggest that significant intra-articular soft tissue damage may result. (orig.)

Evolution of dislocations and twins in a strong and ductile nanotwinned steel

International Nuclear Information System (INIS)

Zhou, P.; Liang, Z.Y.; Liu, R.D.; Huang, M.X.

2016-01-01

A twinning-induced plasticity (TWIP) steel was subjected to a simple processing route (i.e. cold rolling followed by a recovery heat treatment) suitable for large-scale industrial production, resulting in the production of a strong and ductile nanotwinned steel. This nanotwinned steel combines high yield strength (1450 MPa), high ultimate tensile strength (1600 MPa) and good ductility (25% total elongation). Detailed transmission electron microscopy observation reveals that the twin volume fraction of the nanotwinned steel remains constant during tensile deformation. This is different to the deformation behaviour of recrystallized TWIP steels whose twin volume fraction increase continuously with strain during tensile deformation. The constant twin volume fraction indicates that a maximum twin volume fraction has been reached during the cold rolling process. In contrast, the dislocation density of the nanotwinned steel increases with strain as measured by the synchrotron X-ray diffraction experiments. In other words, the plastic deformation of the nanotwinned steel is mainly accommodated by glide and multiplication of dislocations. Based on the experimental results, an analytical model was developed to capture the respective effects of dislocations and twins on the strength and ductility of the present nanotwinned steel. The modelling results indicate that the strength is contributed by both twins and dislocations while the ductility is mainly attributed to dislocation multiplication. -- Graphical abstract: (a) TEM bright field image showing intensive nanotwins in the nanotwinned steel. Selected area diffraction pattern obtained within the red circle. (b) The engineering stress–stain curve of the nanotwinned steel. Display Omitted

Ab initio modeling of interactions between screw dislocations and interstitial solutes in body-centered cubic transition metals

International Nuclear Information System (INIS)

Luthi, Berengere

2017-01-01

In order to improve our understanding of alloy plasticity, it is important to describe at the atomic scale the dislocation-solute interactions and their effect on the dislocation mobility. This work focuses on the body-centered cubic (BCC) transition metals in presence of interstitial solute atoms, in particular the Fe-C system. Using Density Functional Theory (DFT) calculations, the core structure of the screw dislocation of Burgers vector b=1/2<111> was investigated in iron in presence of boron, carbon, nitrogen and oxygen solute atoms, and in BCC metals from group 5 (V, Nb, Ta) and 6 (Mo, W) in presence of carbon solutes. A core reconstruction is evidenced in iron and group 6 metals, along with a strong attractive dislocation-solute interaction energy: the dislocation goes from easy to hard configuration where the solute atoms are at the center of trigonal prisms along the dislocation line. A different behavior is observed in group 5 metals, for which the most stable configuration for the carbon atom is an octahedral site in the vicinity of the dislocation, without any core reconstruction. This group tendency is linked to the structure of mono-carbides. Consequences of the strongly attractive dislocation-solute interactions in Fe(C) were then investigated. First the equilibrium segregation close to the dislocation core was studied using a mean-field model and Monte Carlo simulations. Over a wide temperature range, from 200 to 700 K, a strong segregation is predicted with every other prismatic site occupied by a carbon atom. Then, the mobility of the dislocation in presence of carbon atoms was investigated by modeling the double-kink mechanism with DFT, in relation with experimental data obtained with transmission electron microscopy. The activation energy obtained for this atomic scale mechanism is in good agreement with experimental values for the dynamic strain aging. (author) [fr

Dislocation and void segregation in copper during neutron irradiation

DEFF Research Database (Denmark)

Singh, Bachu Narain; Leffers, Torben; Horsewell, Andy

1986-01-01

); the irradiation experiments were carried out at 250 degree C. The irradiated specimens were examined by transmission electron microscopy. At both doses, the irradiation-induced structure was found to be highly segregated; the dislocation loops and segments were present in the form of irregular walls and the voids...... density, the void swelling rate was very high (approximately 2. 5% per dpa). The implications of the segregated distribution of sinks for void formation and growth are briefly discussed....

Identification of deep levels in GaN associated with dislocations

International Nuclear Information System (INIS)

Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

2004-01-01

To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

Smectic meniscus and dislocations

International Nuclear Information System (INIS)

Geminard, J.C.; Oswald, P.; Holyst, R.

1998-01-01

In ordinary liquids the size of a meniscus and its shape is set by a competition between surface tension and gravity. The thermodynamical process of its creation can be reversible. On the contrary, in smectic liquid crystals the formation of the meniscus is always an irreversible thermodynamic process since it involves the creation of dislocations (therefore it involves friction). Also the meniscus is usually small in experiments with smectics in comparison to the capillary length and therefore the gravity does not play any role in determining the meniscus shape. Here we discuss the relation between dislocations and meniscus in smectics. The theoretical predictions are supported by a recent experiment performed on freely suspended films of smectic liquid crystals. In this experiment the measurement of the meniscus radius of curvature gives the pressure difference, Δp, according to the Laplace law. From the measurements of the growth dynamics of a dislocation loop (governed by Δp) we find the line tension (∼8 x 10 -8 dyn) and the mobility of an elementary edge dislocation (∼4 x 10 - 7 cm 2 s/g). (author)

Dynamic aspects of dislocation motion: atomistic simulations

International Nuclear Information System (INIS)

Bitzek, Erik; Gumbsch, Peter

2005-01-01

Atomistic simulations of accelerating edge and screw dislocations were carried out to study the dynamics of dislocations in a face centered cubic metal. Using two different embedded atom potentials for nickel and a simple slab geometry, the Peierls stress, the effective mass, the line tension and the drag coefficient were determined. A dislocation intersecting an array of voids is used to study dynamic effects in dislocation-obstacle interactions. A pronounced effect caused by inertial overshooting is found. A dynamic line tension model is developed which reproduces the simulation results. The model can be used to easily estimate the magnitude of inertial effects in the interaction of dislocations with localized obstacles for different obstacle strengths, -spacings and temperatures

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

International Nuclear Information System (INIS)

Zhang, Guangming; Zhou, Zhangjian; Mo, Kun; Miao, Yinbin; Liu, Xiang; Almer, Jonathan; Stubbins, James F.

2015-01-01

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ X-ray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 °C, while the screw type dislocations dominate at 600 °C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 °C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 °C may be explained by the activated cross slip of screw segments. - Highlights: • The tensile deformation of 9Cr ODS steel was studied by synchrotron irradiation. • The evolution of internal mean stress was calculated. • The evolution of dislocation character was determined by best-fit method. • Edge type dominates plasticity at RT and 300 °C, while screw type dominates at 600 °C.

The evolution of internal stress and dislocation during tensile deformation in a 9Cr ferritic/martensitic (F/M) ODS steel investigated by high-energy X-rays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Guangming [School of Materials Science and Engineering, University of Science and Technology, Beijing, Beijing 100083 (China); Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States); Zhou, Zhangjian, E-mail: zhouzhj@mater.ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology, Beijing, Beijing 100083 (China); Mo, Kun [Nuclear Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Miao, Yinbin; Liu, Xiang [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States); Almer, Jonathan [X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Stubbins, James F. [Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801 (United States)

2015-12-15

An application of high-energy wide angle synchrotron X-ray diffraction to investigate the tensile deformation of 9Cr ferritic/martensitic (F/M) ODS steel is presented. With tensile loading and in-situ X-ray exposure, the lattice strain development of matrix was determined. The lattice strain was found to decrease with increasing temperature, and the difference in Young's modulus of six different reflections at different temperatures reveals the temperature dependence of elastic anisotropy. The mean internal stress was calculated and compared with the applied stress, showing that the strengthening factor increased with increasing temperature, indicating that the oxide nanoparticles have a good strengthening impact at high temperature. The dislocation density and character were also measured during tensile deformation. The dislocation density decreased with increasing of temperature due to the greater mobility of dislocation at high temperature. The dislocation character was determined by best-fit methods for different dislocation average contrasts with various levels of uncertainty. The results shows edge type dislocations dominate the plastic strain at room temperature (RT) and 300 °C, while the screw type dislocations dominate at 600 °C. The dominance of edge character in 9Cr F/M ODS steels at RT and 300 °C is likely due to the pinning effect of nanoparticles for higher mobile edge dislocations when compared with screw dislocations, while the stronger screw type of dislocation structure at 600 °C may be explained by the activated cross slip of screw segments. - Highlights: • The tensile deformation of 9Cr ODS steel was studied by synchrotron irradiation. • The evolution of internal mean stress was calculated. • The evolution of dislocation character was determined by best-fit method. • Edge type dominates plasticity at RT and 300 °C, while screw type dominates at 600 °C.

Comparison of in-vivo failure of single-thread and dual-thread temporary anchorage devices over 18 months: A split-mouth randomized controlled trial.

Science.gov (United States)

Durrani, Owais Khalid; Shaheed, Sohrab; Khan, Arsalan; Bashir, Ulfat

2017-10-01

The purpose of this study was to compare the in-vivo failure rates of single-thread and dual-thread temporary anchorage device (TAD) designs over 18 months. Thirty patients with skeletal Class II Division 1 malocclusion requiring anchorage from TADs for retraction of maxillary incisors into the extracted premolar space were recruited in this parallel group, split-mouth, randomized controlled trial. A block randomization sequence was generated with Random Allocation Software (version 2.0; Isfahan, Iran) with the allocations concealed in sequentially numbered, opaque, sealed envelopes. A total of 60 TADs (diameter, 2 mm; length, 10 mm) were placed in the maxillary arches of these patients with random allocation of the 2 types to the left and the right sides in a 1:1 ratio. All TADs were placed between the roots of the second premolar and the first molar and were immediately loaded. Patients were followed for a minimum of 12 months and a maximum of 18 months for the failure of the TADs. Data were analyzed blindly on an intention-to-treat basis. Four TADs (13.3%) failed in the single-thread group, and 6 TADs (20%) failed in the dual-thread group. The McNemar test showed an insignificant difference (P = 0.72) between the 2 groups. An odds ratio of 1.6 (95% confidence interval, 0.39-6.97) showed no significant associations among the variables. Most TADs failed in the first month after insertion (50%). The failure rate of dual-thread TADs compared with single-thread TADs is statistically insignificant when placed in the maxilla for retraction of the anterior segment. Registration: The trial was not registered before commencement. The protocol was not published before the trial. Copyright © 2016 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Possible origin of the discrepancy in Peierls stresses of fcc metals: First-principles simulations of dislocation mobility in aluminum

Science.gov (United States)

Shin, Ilgyou; Carter, Emily A.

2013-08-01

Dislocation motion governs the strength and ductility of metals, and the Peierls stress (σp) quantifies dislocation mobility. σp measurements carry substantial uncertainty in face-centered cubic (fcc) metals, and σp values can differ by up to two orders of magnitude. We perform first-principles simulations based on orbital-free density functional theory (OFDFT) to calculate the most accurate currently possible σp for the motion of (1)/(2)111 dislocations in fcc Al. We predict the σps of screw and edge dislocations (dissociated in their equilibrium state) to be 1.9×10-4G and 4.9×10-5G, respectively (G is the shear modulus). These values fall within the range of measurements from mechanical deformation tests (10-4-10-5G). OFDFT also finds a new metastable structure for a screw dislocation not seen in earlier simulations, in which a dislocation core on the glide plane does not dissociate into partials. The corresponding σp for this undissociated dislocation is predicted to be 1.1×10-2G, which agrees with typical Bordoni peak measurements (10-2-10-3G). The calculated σps for dissociated and undissociated screw dislocations differ by two orders of magnitude. The presence of undissociated, as well as dissociated, screw dislocations may resolve the decades-long mystery in fcc metals regarding the two orders of magnitude discrepancy in σp measurements.

Three-dimensional optimization and sensitivity analysis of dental implant thread parameters using finite element analysis.

Science.gov (United States)

Geramizadeh, Maryam; Katoozian, Hamidreza; Amid, Reza; Kadkhodazadeh, Mahdi

2018-04-01

This study aimed to optimize the thread depth and pitch of a recently designed dental implant to provide uniform stress distribution by means of a response surface optimization method available in finite element (FE) software. The sensitivity of simulation to different mechanical parameters was also evaluated. A three-dimensional model of a tapered dental implant with micro-threads in the upper area and V-shaped threads in the rest of the body was modeled and analyzed using finite element analysis (FEA). An axial load of 100 N was applied to the top of the implants. The model was optimized for thread depth and pitch to determine the optimal stress distribution. In this analysis, micro-threads had 0.25 to 0.3 mm depth and 0.27 to 0.33 mm pitch, and V-shaped threads had 0.405 to 0.495 mm depth and 0.66 to 0.8 mm pitch. The optimized depth and pitch were 0.307 and 0.286 mm for micro-threads and 0.405 and 0.808 mm for V-shaped threads, respectively. In this design, the most effective parameters on stress distribution were the depth and pitch of the micro-threads based on sensitivity analysis results. Based on the results of this study, the optimal implant design has micro-threads with 0.307 and 0.286 mm depth and pitch, respectively, in the upper area and V-shaped threads with 0.405 and 0.808 mm depth and pitch in the rest of the body. These results indicate that micro-thread parameters have a greater effect on stress and strain values.

3D DDD modelling of dislocation-precipitate interaction in a nickel-based single crystal superalloy under cyclic deformation

Science.gov (United States)

Lin, Bing; Huang, Minsheng; Zhao, Liguo; Roy, Anish; Silberschmidt, Vadim; Barnard, Nick; Whittaker, Mark; McColvin, Gordon

2018-06-01

Strain-controlled cyclic deformation of a nickel-based single crystal superalloy has been modelled using three-dimensional (3D) discrete dislocation dynamics (DDD) for both [0 0 1] and [1 1 1] orientations. The work focused on the interaction between dislocations and precipitates during cyclic plastic deformation at elevated temperature, which has not been well studied yet. A representative volume element with cubic γ‧-precipitates was chosen to represent the material, with enforced periodical boundary conditions. In particular, cutting of superdislocations into precipitates was simulated by a back-force method. The global cyclic stress-strain responses were captured well by the DDD model when compared to experimental data, particularly the effects of crystallographic orientation. Dislocation evolution showed that considerably high density of dislocations was produced for [1 1 1] orientation when compared to [0 0 1] orientation. Cutting of dislocations into the precipitates had a significant effect on the plastic deformation, leading to material softening. Contour plots of in-plane shear strain proved the development of heterogeneous strain field, resulting in the formation of shear-band embryos.

Nature of Dislocations in Silicon

DEFF Research Database (Denmark)

Hansen, Lars Bruno; Stokbro, Kurt; Lundqvist, Bengt

1995-01-01

Interaction between two partial 90 degrees edge dislocations is studied with atomic-scale simulations using the effective-medium tight-binding method. A large separation between the two dislocations (up to 30 Angstrom), comparable to experimental values, is achieved with a solution of the tight-b...

Intraocular lens dislocation after whole-body vibration.

Science.gov (United States)

Vela, José I; Andreu, David; Díaz-Cascajosa, Jesús; Buil, José A

2010-10-01

We present 2 cases of intraocular lens (IOL) dislocation that appeared shortly after the patients exercised on a vibration platform. The first patient was a 71-year-old woman who presented with lens subluxation in her right eye and a complete posterior IOL dislocation in her left eye. The second case was a 62-year-old woman who presented with unilateral IOL dislocation within the capsular bag in her right eye. Timing from IOL implantation to dislocation was approximately 6 years and 4 years, respectively. Pars plana vitrectomy with removal of the dislocated IOL was performed in both patients. Whole-body vibration training has become increasingly popular as a form of exercise training. It reportedly may provide benefits in physical function and in some diseases, especially in older people. However, evidence-based protocols ensuring safety and efficacy in this population are lacking. We discuss vibration as a cause of late IOL dislocation. Copyright © 2010 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Trapping of edge dislocations by a moving smectic-A smectic-B interface

Science.gov (United States)

Oswald, P.; Lejcek, L.

1991-09-01

We analyze how the motion of the edge dislocations of the smectic-A liquid crystal allows the system to relax plastically the stresses that are generated during the growth of the smectic-B plastic crystal. These stresses are both due, to the density difference between the two phases, and to the layer thickness variation at the phase transition. In particular, we calculate under which conditions a dislocation can be trapped by the smectic-B phase. Finally, we suggest that this dynamical trapping is responsible for the very large amount of stacking faults observed by X-ray diffraction. Nous analysons comment le mouvement des dislocations coin du cristal liquide smectique A permet de relaxer plastiquement les contraintes induites par la croissance du cristal plastique smectique B. Ces contraintes sont engendrées à la fois par la différence de densité qui existe entre les deux phases et par la variation d'épaisseur des couches à la transition. Nous calculons en particulier dans quelles conditions une dislocation coin peut être piégée par le smectique B. Enfin, nous suggérons que ce piégeage dynamique est à l'origine de la très forte densité de fautes d'empilement qui est couramment observée aux rayons X dans la phase B.

Dislocations and other topological oddities

Science.gov (United States)

Pieranski, Pawel

2016-03-01

We will show that the book Dislocations by Jacques Friedel, published half a century ago, can still be recommended, in agreement with the author's intention, as a textbook ;for research students at University and for students at engineering schools as well as for research engineers;. Indeed, today dislocations are known to occur not only in solid crystals but also in many other systems discovered more recently such as colloidal crystals or liquid crystals having periodic structures. Moreover, the concept of dislocations is an excellent starting point for lectures on topological defects occurring in systems equipped with order parameters resulting from broken symmetries: disclinations in nematic or hexatic liquid crystals, dispirations in chiral smectics or disorientations in lyotropic liquid crystals. The discussion of dislocations in Blue Phases will give us an opportunity to call on mind Sir Charles Frank, friend of Jacques Friedel since his Bristol years, who called these ephemeral mesophases ;topological oddities;. Being made of networks of disclinations, Blue Phases are similar to Twist Grain Boundary (TGB) smectic phases, which are made of networks of screw dislocations and whose existence was predicted by de Gennes in 1972 on the basis of the analogy between smectics and superconductors. We will stress that the book by Jacques Friedel contains seeds of this analogy.

Dislocations

Science.gov (United States)

... Fitness Diseases & Conditions Infections Drugs & Alcohol School & Jobs Sports Expert Answers (Q&A) Staying Safe Videos for Educators Search English Español First Aid: ... bones become separated. Dislocations are caused by falls and hard impacts, such as in sports injuries, and are more common in teens than ...

A multiple-scaling method of the computation of threaded structures

International Nuclear Information System (INIS)

Andrieux, S.; Leger, A.

1989-01-01

The numerical computation of threaded structures usually leads to very large finite elements problems. It was therefore very difficult to carry out some parametric studies, especially in non-linear cases involving plasticity or unilateral contact conditions. Nevertheless, these parametric studies are essential in many industrial problems, for instance for the evaluation of various repairing processes of the closure studs of PWR. It is well known that such repairing generally involves several modifications of the thread geometry, of the number of active threads, of the flange clamping conditions, and so on. This paper is devoted to the description of a two-scale method, which easily allows parametric studies. The main idea of this method consists of dividing the problem into a global part, and a local part. The local problem is solved by F.E.M. on the precise geometry of the thread of some elementary loadings. The global one is formulated on the gudgeon scale and is reduced to a monodimensional one. The resolution of this global problem leads to the unsignificant computational cost. Then, a post-processing gives the stress field at the thread scale anywhere in the assembly. After recalling some principles of the two-scales approach, the method is described. The validation by comparison with a direct F.E. computation and some further applications are presented

Formation of dislocation dipoles in irradiated graphite

International Nuclear Information System (INIS)

Niwase, Keisuke

2005-01-01

Recently, we have proposed a dislocation dipole accumulation model to explain the irradiation-induced amorphization of graphite. However, the structure of dislocation dipole in the hexagonal networks is still an open question at the atomic-level. In this paper, we propose a possible formation process of the dislocation dipole

Contributions of Cu-rich clusters, dislocation loops and nanovoids to the irradiation-induced hardening of Cu-bearing low-Ni reactor pressure vessel steels

Energy Technology Data Exchange (ETDEWEB)

Bergner, F., E-mail: f.bergner@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Gillemot, F. [Centre for Energy Research of the Hungarian Academy of Sciences, 29-33 Konkoly-Thege street, 1121 Budapest XII (Hungary); Hernández-Mayoral, M.; Serrano, M. [Division of Materials, CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Török, G. [Wigner Research Center for Physics of the Hungarian Academy of Sciences, 29-33 Konkoly-Thege street, 1121 Budapest XII (Hungary); Ulbricht, A.; Altstadt, E. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

2015-06-15

Highlights: • TEM and SANS were applied to estimate mean size and number density of loops, nanovoids and Cu-rich clusters. • A three-feature dispersed-barrier hardening model was applied to estimate the yield stress increase. • The values and errors of the dimensionless obstacle strength were estimated in a consistent way. • Nanovoids are stronger obstacles for dislocation glide than dislocation loops, loops are stronger than Cu-rich clusters. • For reactor-relevant conditions, Cu-rich clusters contribute most to hardening due to their high number density. - Abstract: Dislocation loops, nanovoids and Cu-rich clusters (CRPs) are known to represent obstacles for dislocation glide in neutron-irradiated reactor pressure vessel (RPV) steels, but a consistent experimental determination of the respective obstacle strengths is still missing. A set of Cu-bearing low-Ni RPV steels and model alloys was characterized by means of SANS and TEM in order to specify mean size and number density of loops, nanovoids and CRPs. The obstacle strengths of these families were estimated by solving an over-determined set of linear equations. We have found that nanovoids are stronger than loops and loops are stronger than CRPs. Nevertheless, CRPs contribute most to irradiation hardening because of their high number density. Nanovoids were only observed for neutron fluences beyond typical end-of-life conditions of RPVs. The estimates of the obstacle strength are critically compared with reported literature data.

Imaging findings of anterior hip dislocations

Energy Technology Data Exchange (ETDEWEB)

Pfeifer, Kyle [Mallinckrodt Institute of Radiology, Department of Radiology, St. Louis, MO (United States); Leslie, Michael [Yale School of Medicine, Department of Orthopedics and Rehabilitation, New Haven, CT (United States); Menn, Kirsten; Haims, Andrew [Yale University School of Medicine, Department of Radiology and Biomedical Imaging, New Haven, CT (United States)

2017-06-15

Anterior hip dislocations are rare orthopedic emergencies resulting from high-energy trauma and have unique imaging characteristics on radiography, computed tomography (CT), and magnetic resonance imaging (MRI). Imaging findings on CT and MRI allow for the prompt recognition and classification of anterior hip dislocations, which guides patient management and reduces complications. The purpose of this article is to review imaging findings of anterior hip dislocations, specifically focusing on CT and MRI. (orig.)

P-Refinement and P-Threads (Preprint)

National Research Council Canada - National Science Library

Dong, Steven; Karniadakis, George E

2002-01-01

...]) in d dimensions, which is higher than lower-order methods. In this paper, we demonstrate that by employing multi-threading within MPI processes we manage to counter- balance the cost increase associated with P-refinement...

An atomic string model for a screw dislocation in iron: Implications for the development of interatomic potentials

International Nuclear Information System (INIS)

Gilbert, M.R.; Dudarev, S.L.; Chiesa, S.; Derlet, P.M.

2009-01-01

Thermally activated motion of screw dislocations is the rate-determining mechanism for plastic deformation and fracture of body centred cubic (bcc) metals and alloys. Recent experimental observations by S.G. Roberts' group at Oxford showed that ductile-brittle behaviour of bcc vanadium, tungsten, pure iron, and iron-chromium alloys is controlled by an Arrhenius process in which the energy for thermal activation is proportional to the formation energy for a double kink on a b= 1/2 screw dislocation, where b is the Burgers vector of the dislocation. Interpreting these experimental observations and extending the analysis to the case of irradiated materials requires developing a full quantitative treatment for perfect and kinked screw dislocations. Modelling screw dislocations also presents a challenge for the development of interatomic potentials. Recent density functional theory (DFT) calculations have revealed that the ground-state structure of the core of screw dislocations in all the bcc transition metals is non-degenerate and symmetric, whereas inter-atomic potentials used in molecular dynamics simulations for these metals often predict a degenerate, symmetry-broken core-structure. In this work we show how, by treating the structure of a screw dislocation within a multistring Frenkel-Kontorova model, we can develop a criterion that guarantees the correct symmetric core of the dislocation. Extending this treatment, we find a systematic recipe for constructing Finnis-Sinclair-type potentials that are able, as a matter of routine, produce non-degenerate core structures of 1/2 screw dislocations. Modelling thermally activated mobility of screw dislocations also requires that the transition pathway between stable core positions of a dislocation is accurately reproduced. DFT data indicates that the shape of the 'Peierls energy barrier' is a single-hump curve, including transitional configurations close to the so-called 'hard' structure. Interatomic potentials have, up

High-temperature discrete dislocation plasticity

Science.gov (United States)

Keralavarma, S. M.; Benzerga, A. A.

2015-09-01

A framework for solving problems of dislocation-mediated plasticity coupled with point-defect diffusion is presented. The dislocations are modeled as line singularities embedded in a linear elastic medium while the point defects are represented by a concentration field as in continuum diffusion theory. Plastic flow arises due to the collective motion of a large number of dislocations. Both conservative (glide) and nonconservative (diffusion-mediated climb) motions are accounted for. Time scale separation is contingent upon the existence of quasi-equilibrium dislocation configurations. A variational principle is used to derive the coupled governing equations for point-defect diffusion and dislocation climb. Superposition is used to obtain the mechanical fields in terms of the infinite-medium discrete dislocation fields and an image field that enforces the boundary conditions while the point-defect concentration is obtained by solving the stress-dependent diffusion equations on the same finite-element grid. Core-level boundary conditions for the concentration field are avoided by invoking an approximate, yet robust kinetic law. Aspects of the formulation are general but its implementation in a simple plane strain model enables the modeling of high-temperature phenomena such as creep, recovery and relaxation in crystalline materials. With emphasis laid on lattice vacancies, the creep response of planar single crystals in simple tension emerges as a natural outcome in the simulations. A large number of boundary-value problem solutions are obtained which depict transitions from diffusional to power-law creep, in keeping with long-standing phenomenological theories of creep. In addition, some unique experimental aspects of creep in small scale specimens are also reproduced in the simulations.

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Science.gov (United States)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Electrical conduction along dislocations in plastically deformed GaN

Energy Technology Data Exchange (ETDEWEB)

Kamimura, Y; Yokoyama, T; Oiwa, H; Edagawa, K [Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Yonenaga, I, E-mail: yasushi@iis.u-tokyo.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

2009-07-15

Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<1overline 210> edge dislocations parallel to the [0001] direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.

Rare Inferior Shoulder Dislocation (Luxatio Erecta)

OpenAIRE

Cift, Hakan; Soylemez, Salih; Demiroglu, Murat; Ozkan, Korhan; Ozden, Vahit Emre; Ozkut, Afsar T.

2015-01-01

Although shoulder dislocations have been seen very frequently, inferior dislocation of shoulder constitutes only 0.5% of all shoulder dislocations. We share our 4 patients with luxatio erecta and present their last clinical control. 2 male and 2 female Caucasian patients were diagnosed as luxatio erecta. Patients’ ages were 78, 62, 65, and 76. All patients’ reduction was done by traction-abduction and contour traction maneuver in the operating room. The patients had no symptoms and no limitat...

Temporomandibular joint dislocation due to acute propranolol intoxication

Directory of Open Access Journals (Sweden)

Abbas Aghabiklooei

2010-07-01

Full Text Available Abbas Aghabiklooei1, Homan Elahi2, Babak Mostafazadeh31Department of Medical Toxicology and Forensic Medicine, Iran University of Medical Sciences, Tehran, Iran; 2Firouzgar Hospital, Department of ENT, Tehran, Iran; 3Department of Medical Toxicology and Forensic Medicine, Shaheed Beheshty University of Medical Sciences, Tehran, IranAbstract: Temporomandibular joint (TMJ dislocation has not previously been reported as a complication of beta-blocker toxicity. We are reporting two cases of TMJ dislocation resulted from acute severe intoxication with pure propranolol (PPL for the first time. Bilateral TMJ dislocation happened in two patients who were admitted to intensive care unit with diagnosis of severe acute PPL toxicity. Clinical diagnosis of TMJ dislocation was obtained by physical examination. Successful reduction was performed for both patients without subsequent recurrence in two weeks following hospital discharge. Both of our subjects had no previous history of lower jaw dislocation. There was not any risk factor for dislocation such as convulsion during admission period, recent face trauma, or oral manipulation by the medical team. This study showed that TMJ dislocation may occur after severe acute PPL toxicity probably due to spastic contraction of the lateral pterygoid muscle. This is against previously mentioned hypothesis that stated masseteric muscles contraction as the main cause of a bilateral dislocated TMJ.Keywords: propranolol, toxicity, temporomandibular joint dislocation

The Automated Threaded Fastening Based on On-line Identification

Directory of Open Access Journals (Sweden)

Nicolas Ivan Giannoccaro

2008-11-01

Full Text Available The principle of the thread fastenings have been known and used for decades with the purpose of joining one component to another. Threaded fastenings are popular because they permit easy disassembly for maintenance, repair, relocation and recycling. Screw insertions are typically carried out manually. It is a difficult problem to automat. As a result there is very little published research on automating threaded fastenings, and most research on automated assembly focus on the peg-in-hole assembly problem. This paper investigates the problem of automated monitoring of the screw insertion process. The monitoring problem deals with predicting integrity of a threaded insertion, based on the torque vs. insertion depth curve generated during the insertions. The authors have developed an analytical model to predict the torque signature signals during self-tapping screw insertions. However, the model requires parameters on the screw dimensions and plate material properties are difficult to measure. This paper presents a study on on-line identification during screw fastenings. An identification methodology for two unknown parameter estimation during a self-tapping screw insertion process is presented. It is shown that friction and screw properties required by the model can be reliably estimated on-line. Experimental results are presented to validate the identification procedure.

Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction.

Science.gov (United States)

Groiss, Heiko; Glaser, Martin; Marzegalli, Anna; Isa, Fabio; Isella, Giovanni; Miglio, Leo; Schäffler, Friedrich

2015-06-01

By transmission electron microscopy with extended Burgers vector analyses, we demonstrate the edge and screw character of vertical dislocations (VDs) in novel SiGe heterostructures. The investigated pillar-shaped Ge epilayers on prepatterned Si(001) substrates are an attempt to avoid the high defect densities of lattice mismatched heteroepitaxy. The Ge pillars are almost completely strain-relaxed and essentially defect-free, except for the rather unexpected VDs. We investigated both pillar-shaped and unstructured Ge epilayers grown either by molecular beam epitaxy or by chemical vapor deposition to derive a general picture of the underlying dislocation mechanisms. For the Burgers vector analysis we used a combination of dark field imaging and large-angle convergent beam electron diffraction (LACBED). With LACBED simulations we identify ideally suited zeroth and second order Laue zone Bragg lines for an unambiguous determination of the three-dimensional Burgers vectors. By analyzing dislocation reactions we confirm the origin of the observed types of VDs, which can be efficiently distinguished by LACBED. The screw type VDs are formed by a reaction of perfect 60° dislocations, whereas the edge types are sessile dislocations that can be formed by cross-slips and climbing processes. The understanding of these origins allows us to suggest strategies to avoid VDs.

The epidemiology of shoulder dislocations in Oslo.

Science.gov (United States)

Liavaag, S; Svenningsen, S; Reikerås, O; Enger, M; Fjalestad, T; Pripp, A H; Brox, J I

2011-12-01

There are few previous studies on the incidence of shoulder dislocation in the general population. The aim of the study was to report the incidence of acute shoulder dislocations in the capital of Norway (Oslo) in 2009. Patients of all ages living in Oslo, sustaining a dislocation of the glenohumeral joint, were identified using electronic diagnosis registers, patient protocols, radiological registers of the hospitals, and the Norwegian Patient Register (NPR). The overall incidence rate was 56.3 [95% confidence interval (CI) 50.2-62.4] per 100,000 person-years, with rates of 82.2 (95% CI 71.7-92.8) and 30.9 (95% CI 24.5-37.3) in men and women, respectively. The incidence of primary dislocations was 26.2 (95% CI 22.1-30.4). The overall incidence of shoulder dislocations in Oslo was higher than previously reported incidences. The incidence of primary dislocations was also higher than that in previously reported studies for the general population but it was close to the incidence reported in Malmø, Sweden. © 2011 John Wiley & Sons A/S.

Atomistically-informed dislocation dynamics in FCC crystals

International Nuclear Information System (INIS)

Martinez, E.; Marian, J.; Arsenlis, A.; Victoria, M.; Martinez, E.; Victoria, M.; Perlado, J.M.

2008-01-01

Full text of publication follows. We will present a nodal dislocation dynamics (DD) model to simulate plastic processes in fcc crystals. The model explicitly accounts for all slip systems and Burgers vectors observed in fcc systems, including stacking faults and partial dislocations. We derive simple conservation rules that describe all partial dislocation interactions rigorously and allow us to model and quantify cross-slip processes, the structure and strength of dislocation junctions, and the formation of fcc-specific structures such as stacking fault tetrahedra. The DD framework is built upon isotropic non-singular linear elasticity, and supports itself on information transmitted from the atomistic scale. In this fashion, connection between the meso and micro scales is attained self-consistently with core parameters fitted to atomistic data. We perform a series of targeted simulations to demonstrate the capabilities of the model, including dislocation reactions and dissociations and dislocation junction strength. Additionally we map the four-dimensional stress space relevant for cross-slip and relate our fundings to the plastic behaviour of' monocrystalline fcc metals. (authors)

Dislocation Dynamics in Al-Li Alloys. Mean Jump Distance and Activation Length of Moving Dislocations

NARCIS (Netherlands)

Hosson, J.Th.M. De; Huis in 't Veld, A.; Tamler, H.; Kanert, O.

1984-01-01

Pulsed nuclear magnetic resonance proved to be a complementary new technique for the study of moving dislocations in Al-Li alloys. The NMR technique, in combination with transmission electron microscopy and strain-rate change experiments have been applied to study dislocation motion in Al-2.2 wt% Li

The Research of Screw Thread Parameter Measurement Based on Position Sensitive Detector and Laser

International Nuclear Information System (INIS)

Tong, Q B; Ding, Z L; Chen, J C; Ai, L L; Yuan, F

2006-01-01

A technique and system of measuring screw thread parameter based on the theory of laser measurement is presented in this paper, which can be carried out the automated measurement of screw thread parameter. An inspection instrument was designed and produced, which included exterior imaging system of optical path, transverse displacement measurement system, axial displacement measurement system, and a module to deal with, control and assess the data in the upper system. The inspection and estimate of the screw thread contour curve were completed by using position sensitive device (PSD) as photoelectric detector to measure the coordinate data of the screw thread contour curve in the transverse section, and using precise raster to measure the axial displacement of the precision worktable under the screw thread test criterion., computer can gives a measured result according to coordinate data of the screw thread obtained by PSD. The relation between measured spot and image is established, and optimum design of the system organization are introduced, including the image length of receiving lens focal length optical system and the choice of PSD , and some main factor affected measuring precision are analyzed. The experimental results show that the measurement uncertainty of screw thread minor diameter can reach 0. 5μm, which can meet most requests for the measurement of screw thread parameter

A Hybrid Approach for Thread Recommendation in MOOC Forums

OpenAIRE

Ahmad. A. Kardan; Amir Narimani; Foozhan Ataiefard

2017-01-01

Recommender Systems have been developed to provide contents and services compatible to users based on their behaviors and interests. Due to information overload in online discussion forums and users diverse interests, recommending relative topics and threads is considered to be helpful for improving the ease of forum usage. In order to lead learners to find relevant information in educational forums, recommendations are even more needed. We present a hybrid thread recommender system for MOOC ...

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

International Nuclear Information System (INIS)

Tomiya, S.; Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M.

2006-01-01

A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan); Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M. [Shiroishi Laser Center, Semiconductor Laser Division, MSNC, Sony Corporation, Miyagi (Japan)

2006-06-15

A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Kwon, O.; Boeckl, J. J.; Lee, M. L.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A.

2006-01-01

Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe/Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2x10 6 cm -2 . A threshold current density of J th ∼1.65 kA/cm 2 for the as-cleaved, gain-guided AlGaInP laser grown on SiGe/Si was obtained at the peak emission wavelength of 680 nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods

Mechanisms operating during plastic deformation of metals under concurrent production of cascades and dislocations

Energy Technology Data Exchange (ETDEWEB)

Trinkaus, H. [Institut fuer Festkoerperforschung, Forschungszentrum Juelich (Germany); Singh, B.N. [Technical Univ. of Denmark, Risoe National Laboratory for Sustainable Energy, Materials Research Dept., Roskilde (Denmark)

2008-04-15

Recent in-reactor tensile tests (IRTs) on pure copper have revealed a deformation behaviour which is significantly different from that observed in post-irradiation tensile tests (PITs). In IRTs, the material deforms uniformly and homogeneously without yield drop and plastic instability as commonly observed in PITs. An increase in the pre-yield dose results in an increase in the level of hardening over the whole test periods and a decrease in the uniform elongation suggesting that the materials 'remember' the impact of the pre-yield damage level. These features are modelled in terms of the decoration of dislocations with glissile dislocation loops. During pre-yield irradiation, dislocation decoration is due to the one-dimensional (1D) diffusion of cascade induced self-interstitial (SIA) clusters and their trapping in the stress field of the static grown-in dislocations. During post-yield irradiation and deformation, moving dislocations are decorated by the sweeping of matrix loops. The interaction of dislocations with loops and between loops is discussed as a function of the relevant parameters. On this basis, the kinetics of decoration is treated in terms of fluxes of loops to and reactions with each other in a conceived 2D space of decoration. In this space, loop coalescence, alignment and mutual blocking reactions are characterised by appropriate reaction cross sections. In the kinetic equations for 'dynamic decoration' under deformation, the evolution of the dislocation density is taken into account. Simple solutions of the kinetic equations are discussed. The apparent memory of the system for the pre-yield dose is identified as the result of simultaneous and closely parallel transient evolutions of the cascade damage and the dislocations up to the end of the IRTs. The contributions of dislocation decoration to yield and flow stresses are attributed to the interaction of dislocations with aligned loops temporarily or permanently immobilized

Electron-dislocation interaction at low temperatures. Progress report

International Nuclear Information System (INIS)

1976-01-01

Studies of the interaction of mobile dislocations with electrons have shown that dislocation motion can be, in part, described by treating the dislocation as an underdamped oscillator. In particular, studies in lead alloys have shown tht dislocation motion can be considered as the motion of string, slightly damped by electrons, without regard for any other lattice friction. In addition we have shown that silver solutes, in lead crystals, occupy, partially, interstitial sites. Finally, we have shown that dislocations in copper interact, unexpectedly, with electrons. This is shown by measuring the influence of a magnetic field on the flow stress of copper crystals at 4.2 0 K

Topological defect and quasi-particle dynamics in charge density waves

International Nuclear Information System (INIS)

Hayashi, Masahiko; Ebisawa, Hiromichi

2010-01-01

The dynamics of topological defects (dislocations) in charge density waves (CDW's) is largely affected by the quasi-particle dynamics in the cores of the dislocations. The dislocations mediate the conversion of the electron number between condensate and quasi-particle sub-systems. This is especially important in the sliding conduction of CDW. In this work we propose a simple model, which is obtained by extending the Ginzburg-Landau theory partially taking into account the quasi-particle dynamics in the sense of two-fluid model. We perform the numerical simulation of sliding conduction of CDW based on our model. Using this model we may clarify the detailed process of dislocation nucleation and annihilation near the contacts.

Thread sign in biliary intraductal papillary mucinous neoplasm: a novel specific finding for MRI

International Nuclear Information System (INIS)

Hong, Gil-Sun; Byun, Jae Ho; Kim, Jin Hee; Kim, Hyoung Jung; Lee, Seung Soo; Lee, Moon-Gyu; Hong, Seung-Mo

2016-01-01

To evaluate thread sign of biliary intraductal papillary mucinous neoplasm (B-IPMN) on magnetic resonance imaging (MRI). Thread sign was defined as intraductal linear or curvilinear hypointense striations. Two radiologists independently evaluated the presence and location of thread sign on MR cholangiography (thin-slice, thick-slab and 3D MRC) and axial MR images (T2 TSE, T2 HASTE and DWI) in patients with B-IPMN (n = 38) and in matched control groups with benign (n = 36) or malignant (n = 35) biliary diseases. Sensitivity, specificity, accuracy, positive predictive value (PPV), and negative predictive value (NPV) of thread sign for diagnosing B-IPMN were evaluated. Thread sign was observed only in patients with B-IPMN on MRC (44.7-52.6 % [17/38-20/38], P < 0.001) and axial MR images (31.6 % [12/38], P < 0.001), except in one patient with recurrent pyogenic cholangitis on MRC (2.8 %, 1/36). The sensitivity, specificity, accuracy, PPV and NPV of thread sign for diagnosing B-IPMN on MRC were 0.53, 0.99, 0.83, 0.95 and 0.80, respectively (reader 1) and 0.45, 1.0, 0.81, 1.0 and 0.77, respectively (reader 2). Thread sign was detected mainly at the extrahepatic bile duct (52.6 %, 20/38). B-IPMN can manifest thread sign, a novel specific MR finding, mainly at the extrahepatic bile duct on MRI, especially on MRC. (orig.)

Irreducible Traumatic Posterior Shoulder Dislocation

Directory of Open Access Journals (Sweden)

Blake Collier

2017-01-01

Full Text Available History of present illness: A 22-year-old male presented to the Emergency Department complaining of right shoulder pain after a motocross accident. He was traveling at approximately 10 mph around a turn when he lost control and was thrown over the handlebars, landing directly on his right shoulder. On arrival, he was holding his arm in adduction and internal rotation. An area of swelling was noted over his anterior shoulder. He was unable to abduct his shoulder. No humeral gapping was noted. He had normal neuro-vascular status distal to the injury. Significant findings: Radiographs demonstrated posterior displacement of the humeral head on the “Y” view (see white arrow and widening of the glenohumeral joint space on anterior-posterior view (see red arrow. The findings were consistent with posterior dislocation and a Hill-Sachs type deformity. Sedation was performed and reduction was attempted using external rotation, traction counter-traction. An immediate “pop” was felt during the procedure. Post-procedure radiographs revealed a persistent posterior subluxation with interlocking at posterior glenoid. CT revealed posterior dislocation with acute depressed impaction deformity medial to the biceps groove with the humeral head perched on the posterior glenoid, interlocked at reverse Hill-Sachs deformity (see blue arrow. Discussion: Posterior shoulder dislocations are rare and represent only 2% of all shoulder dislocations. Posterior shoulder dislocations are missed on initial diagnosis in more than 60% of cases.1 Posterior shoulder dislocations result from axial loading of the adducted and internally rotated shoulder, violent muscle contractions (resulting from seizures or electrocution, a direct posterior force applied to the anterior shoulder.1 Physical findings include decreased anterior prominence of the humeral head, increased palpable posterior prominence of the humeral head below the acromion, increased palpable prominence of the

Molecular dynamics simulation of dislocations in uranium dioxide

Energy Technology Data Exchange (ETDEWEB)

Fossati, Paul [CEA, DEN, DPC, SCCME, F-91191 Gif-sur-Yvette Cedex (France); Van Brutzel, Laurent, E-mail: laurent.vanbrutzel@cea.fr [CEA, DEN, DPC, SCCME, F-91191 Gif-sur-Yvette Cedex (France); Devincre, Benoît [LEM, CNRS-ONERA, 29 avenue de la Division Leclerc, F-92322 Châtillon Cedex (France)

2013-11-15

The plasticity of the fluorite structure in UO{sub 2} is investigated with molecular dynamics simulation and empirical potential. The stacking fault energies and the dislocation core structures with Burgers vector a/2 〈110〉 are systematically calculated. All dislocation core structures show a significant increase of the oxygen sub-lattice disorder at temperatures higher than 1500 K. The threshold stress for dislocation glide is found to decrease with increasing temperature but its values is always very high, several GPa at 0 K and several hundred of MPa at 2000 K. A relation between the dislocation mobility dependence with temperature and the increase of the oxygen sub-lattice disorder in the dislocation cores is established.

Metastablity of the undissociated state of dissociated dislocations

International Nuclear Information System (INIS)

Takeuchi, Shin

2005-01-01

Undissociated, metastable dislocations have been observed in various crystals in addition to stable dissociated dislocations by high-resolution transmission electron microscopy. The origin of the metastablity of the undissociated state has been discussed specifically for the dissociation into Shockley partial dislocations in fcc or hcp lattice. It is shown that the metastability is due either to a high Peierls-Nabarro stress larger than a few percent of the shear modulus of the partial dislocations and/or to the increase of the total core energy by an increase of the dangling bonds. The metastablity of undissociated dislocations in zincblende III-V compounds is concluded to be due to a contribution of the latter effect

Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

DEFF Research Database (Denmark)

Barlow, P.; Leffers, Torben

1977-01-01

Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

Atomic-scale dislocation dynamics in radiation damage environment

International Nuclear Information System (INIS)

Osetsky, Y.; Stoller, R.; Bacon, D.J.

2007-01-01

Full text of publication follows: The dynamics behavior of dislocations determines mechanical properties of crystalline materials. Long-range interactions between a moving dislocation and other defects can be treated within a continuum approach via interaction of their stress and strain fields. However, a vast contribution to mechanical properties depends on the direct interaction between dislocations and other defects and depends very much on the particular atomic scale structure of the both moving dislocation core and the obstacle. In this work we review recent progress in large-scale modeling of dislocation dynamics in metals at the atomic level by molecular dynamics and statics. We review the modem techniques used to simulate dynamics of dislocations in different lattice structures, the dependence on temperature, strain rate and obstacle size. Examples are given for bcc, fcc and hcp metals where edge and screw dislocations interact with vacancy (loops, voids, stacking fault tetrahedra, etc), self-interstitial clusters and secondary phase precipitates. Attention is paid to interpretation of atomistic results from the point of view of parameterization of continuum models. The latter is vitally necessary for further application in 3-dimensional dislocation dynamics within the multi-scale materials modeling approach. Research sponsored by the Division of Materials Sciences and Engineering and the Office of Fusion Energy Sciences, U.S. Department of Energy, under contract DE-AC0S-00OR22725 with UT-Battelle, LLC. (authors)

Interactions between Dislocations and Grain Boundaries

NARCIS (Netherlands)