WorldWideScience

Sample records for thin-film solar cells

  1. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  2. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  3. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  4. Thin-film solar cells. Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  5. US Polycrystalline Thin Film Solar Cells Program

    Science.gov (United States)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  6. US polycrystalline thin film solar cells program

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H S; Zweibel, K; Mitchell, R L [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  7. Recent developments in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  8. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  9. Thin-film silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  10. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  11. Nanocrystalline silicon based thin film solar cells

    Science.gov (United States)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  12. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... the promotion of electrons from the valence band of the semiconductor. The photoemission would extend the spectral response of the photovoltaic device. Thus, NPs are placed at the metal/semiconductor interface (in order to exploit the localization characteristic of the LSP enhancement) and are used as active...... the solar cell structure (GaAs, SiO2, Si3N4, AZO/Cr), in order to investigate the LSP resonance and tune it to exploit it below the energy band gap of the semiconductor. EBL is a difficult technique when working by lift-off on critical size (20-50 nm) nanoparticles. The optimization of the process saw...

  13. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  14. Light management in thin-film silicon solar cells

    OpenAIRE

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved with silicon-based solar cells. To stay competitive with bulk crystalline silicon and other thin-film solar cell technologies, thin-film silicon solar cells have to achieve a conversion efficiency l...

  15. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  16. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  17. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  18. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  19. Recent technological advances in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  20. UV imprinting for thin film solar cell application

    Science.gov (United States)

    Escarré, J.; Battaglia, C.; Söderström, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-02-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  1. UV imprinting for thin film solar cell application

    OpenAIRE

    Escarre, J; Battaglia, C; Soederstroem, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-01-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  2. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  3. Light management in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  4. Annealing of Solar Cells and Other Thin Film Devices

    Science.gov (United States)

    Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

  5. Photon upconversion for thin film solar cells

    NARCIS (Netherlands)

    de Wild, J.

    2012-01-01

    In this research one of the many possible methods to increase the efficiency of solar cells is described. The method investigated is based on adapting the solar light in such a way that the solar cell can convert more light into electricity. The part of the solar spectrum that is adapted is the part

  6. Indium tin oxide-silicon thin film solar cell

    International Nuclear Information System (INIS)

    Heterojunction solar cells consisting of amorphous indium tin oxide (ITO) thin films on silicon films have been fabricated and studied. The results show that the devices give a photovoltaic effect and rectifying characteristics. One of the main characteristics of amorphous ITO thin films is better transparency (>85%) over the complete useful window of the solar spectrum. The polarity observed is found to be consistent with V/sub oc/ = 0.34 volt, I/sub sc/ = 22mA/cm/sup 2/ and fill factor = 0.48. An attempt has been made to understand the conduction mechanism of indium tin oxide - silicon heterojunction

  7. Thin Film Solar Cells and their Optical Properties

    Directory of Open Access Journals (Sweden)

    Stanislav Jurecka

    2006-01-01

    Full Text Available In this work we report on the optical parameters of the semiconductor thin film for solar cell applications determination. The method is based on the dynamical modeling of the spectral reflectance function combined with the stochastic optimization of the initial reflectance model estimation. The spectral dependency of the thin film optical parameters computations is based on the optical transitions modeling. The combination of the dynamical modeling and the stochastic optimization of the initial theoretical model estimation enable comfortable analysis of the spectral dependencies of the optical parameters and incorporation of the microstructure effects on the solar cell properties. The results of the optical parameters ofthe i-a-Si thin film determination are presented.

  8. Molecular solution processing of metal chalcogenide thin film solar cells

    OpenAIRE

    Yang, Wenbing

    2013-01-01

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (C...

  9. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  10. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  11. Polycrystalline thin-film solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  12. Polycrystalline thin-film solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  13. Light trapping effects in thin film silicon solar cells

    OpenAIRE

    Haug, FJ; Söderström, T; Dominé, D.; Ballif, C.

    2009-01-01

    We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material an...

  14. Buried contact multijunction thin film silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Green, M. [Univ. of New South Wales, Sydney (Australia)

    1995-08-01

    In early 1994, the Center for Photovoltaic Devices and Systems announced the filing of patent applications on an improved silicon thin film photovoltaic module approach. With material costs estimated to be about 20 times lower than those in present silicon solar cell modules along with other production advantages, this technology appears likely to make low cost, high performance solar modules available for the first time. This paper describes steps involved in making a module and module performance.

  15. CZTSSe thin film solar cells: Surface treatments

    Science.gov (United States)

    Joglekar, Chinmay Sunil

    Chalcopyrite semiconducting materials, specifically CZTS, are a promising alternative to traditional silicon solar cell technology. Because of the high absorption coefficient; films of the order of 1 micrometer thickness are sufficient for the fabrication of solar cells. Liquid based synthesis methods are advantageous because they are easily scalable using the roll to roll manufacturing techniques. Various treatments are explored in this study to enhance the performance of the selenized CZTS film based solar cells. Thiourea can be used as a sulfur source and can be used to tune band gap of CZTSSe. Bromine etching can be used to manipulate the thickness of sintered CZTSSe film. The etching treatment creates recombination centers which lead to poor device performance. Various after treatments were used to improve the performance of the devices. It was observed that the performance of the solar cell devices could not be improved by any of the after treatment steps. Other surface treatment processes are explored including KCN etching and gaseous H2S treatments. Hybrid solar cells which included use of CIGS nanoparticles at the interface between CZTSSe and CdS are also explored.

  16. Design of a thin film CdTe solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V.

    1988-01-15

    Cadmium telluride was originally considered for thin film solar cells because of its optimum band gap, high optical absorption coefficient and ability to be doped. Furthermore, it is a stable compound which can be produced by a wide variety of methods from stable raw materials. As thin film photovoltaics mature, however, it is clear that several more subtle attributes have a significant impact on the viability of commercialization. We discuss the observations which have provided insight and direction to Ametek's CdTe solar cell program. Rather than try to modify the inherent material properties of CdTe, advances have been made by designing a solar cell that exploits existing properties. Specifically, the tendency to self-compensate, which makes low resistance contacting difficult, is turned into an advantage in the n-i-p configuration; the CdTe provides an intrinsic layer with good carrier collection efficiency.

  17. Microcrystalline organic thin-film solar cells.

    Science.gov (United States)

    Verreet, Bregt; Heremans, Paul; Stesmans, Andre; Rand, Barry P

    2013-10-11

    Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices. PMID:23939936

  18. Light-Induced Degradation of Thin Film Silicon Solar Cells

    Science.gov (United States)

    Hamelmann, F. U.; Weicht, J. A.; Behrens, G.

    2016-02-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods.

  19. High efficiency thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Britt, J.; Chen, G.; Ferekides, C.; Schultz, N.; Wang, C.; Wu, C. Q.

    1992-12-01

    Cadmium sulfide (CdS), grown from an aqueous solution, and zinc oxide (ZnO), cadmium zinc sulfide (Cd1-xZnxS), and zinc selenide (ZnSe), deposited by metalorganic chemical vapor deposition (MOCVD), have been used as the window for thin film cadmium telluride (CdTe) solar cells. Thin film solar cells were prepared by the successive deposition of the window and p-CdTe (by MOCVD and close-spaced sublimation, CSS) on SnO2:F/glass substrates. CdS/CdTe(CSS) solar cells show considerably better characteristics than CdS/CdTe(MOCVD) solar cells because of the better microstructure of CSS CdTe films. Total area conversion efficiency of 14.6%, verified by the National Renewable Energy Laboratory, has been achieved for solar cells of about 1 cm2 area. Solar cell prepared by using ZnO, ZnSe, or Cd1-xZnxS as window have significantly lower photovoltage than CdS/CdTe solar cells.

  20. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  1. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  2. Laser annealing of thin film polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  3. Interfacial Properties of CZTS Thin Film Solar Cell

    Directory of Open Access Journals (Sweden)

    N. Muhunthan

    2014-01-01

    Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

  4. Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

    CERN Document Server

    Kodigala, Subba Ramaiah

    2013-01-01

    The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

  5. Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2012-01-01

    Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each othe

  6. Methods for fabricating thin film III-V compound solar cell

    Science.gov (United States)

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  7. Thin-film polycrystalline silicon solar cells

    Science.gov (United States)

    Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

    1981-07-01

    The highest efficiencies achieved with single crystals are 14.1% for ITO/n-SI and 13.3% of SnO2/n-Si, while the corresponding values for polysilicon are 11.2% and 10.1%. For large area single crystal devices the efficiency values are 11.7% and 11.2% for ITO and SnO2 cells, respectively, while for polysilicon the corresponding values are 9.82% and 8.55%. The lower efficiency for large area devices is mainly due to lower J sub sc and FF. Results are presented to show the optimum grid spacing required. From stability studies it is shown that there are two distinct mechanisms for degradation, one optical and the other thermal. The optical degradation could be eliminated if the cells could be protected from uv light and the thermal degradation can be prevented if the cells are operated below 100 C.

  8. High efficiency nanostructured thin film solar cells for energy harvesting

    Science.gov (United States)

    Welser, Roger E.; Sood, Ashok K.; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal S.

    2016-05-01

    Thin-film III-V materials are an attractive candidate material for solar energy harvesting devices capable of supplying portable and mobile power in both terrestrial and space environments. Nanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing photovoltaic device performance. In this paper, we will review recent progress on realizing high-voltage InGaAs/GaAs quantum well solar cells that operate at or near the radiative limit of performance. These high-voltage nanostructured device designs provide a pathway to enhance the performance of existing device technologies, and can also be leveraged for next-generation solar cells.

  9. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  10. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film sili

  11. Thin-film Solar Cells for Space Applications

    Science.gov (United States)

    Lush, Gregory B.

    2003-01-01

    The proposed work supports MURED goals by fostering research and development activities at Fisk and UTEP which contribute substantially to NASA's mission, preparing faculty and students at Fisk and UTEP to successfully participate in the conventional, competitive research and education process, and increasing the number of students to successfully complete degrees in NASA related fields. The project also addresses directly a core need of NASA for space power and is consistent with the Core Responsibilities of the John Glenn Space Center. Current orbital missions are limited by radiation from high energy particles trapped in the Van Allen Belt because that solar radiation degrades cell performance by damaging the crystalline lattice. Some potential orbits have been inaccessible because the radiation is too severe. Thin-film solar cells, if they can be adapted for use in the unfriendly space environment, could open new orbits to satellites by providing a radiation hard source of power. The manned mission to Mars requires photovoltaic devices for both the trip there and as a power supply on the surface. Solar arrays using thin films offer a low power/weight ratio solution that provides reliable photovoltaic power.

  12. Analysis of loss mechanisms in polycrystalline thin film solar cells

    Science.gov (United States)

    Sites, J. R.

    1990-08-01

    Our goal for thin-film polycrystalline solar cell analysis was to increase the useful information extracted from relatively straightforward electrical measurements. The strategy was to (1) systematize measurements and reporting, (2) organize results in terms of quantitative values for individual sources of current and voltage loss, and (3) evaluate possible analytical techniques to enhance precision and avoid pitfalls, and (4) insist on a viable physical explanation of each loss mechanism. Current-voltage, quantum efficiency, and capacitance measurements on CuInSe2 and CdTe solar cells from a variety of sources have been analyzed. In many cases losses were identified that may be lessened relatively easily. However, the operating voltage loss due to excessive forward recombination current throughout the depletion region remains the primary obstacle to efficiencies competitive with single crystal cells.

  13. Analysis of loss mechanisms in polycrystalline thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R. (Colorado State Univ., Fort Collins, CO (USA))

    1990-08-01

    Our goal for thin-film polycrystalline solar cell analysis was to increase the useful information extracted from relatively straightforward electrical measurements. The strategy was to (1) systematize measurements and reporting, (2) organize results in terms of quantitative values for individual sources of current and voltage loss, and (3) evaluate possible analytical techniques to enhance precision and avoid pitfalls, and (4) insist on a viable physical explanation of each loss mechanism. Current-voltage, quantum efficiency, and capacitance measurements on CuInSe{sub 2} and CdTe solar cells from a variety of sources have been analyzed. In many cases losses were identified that may be lessened relatively easily. However, the operating voltage loss due to excessive forward recombination current throughout the depletion region remains the primary obstacle to efficiencies competitive with single crystal cells. 1 tab., 4 figs., 26 refs.

  14. Circuit analysis method for thin-film solar cell modules

    Science.gov (United States)

    Burger, D. R.

    1985-01-01

    The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

  15. Commercial Development Of Ovonic Thin Film Solar Cells

    Science.gov (United States)

    Ovshinsky, Stanford R.

    1983-09-01

    subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

  16. Trends in development of CuInSe sub 2 thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Nakata, Tokio; Kunioka, Akio (Aoyama Gakuin Univ. School of Science and Engineering, Tokyo, Japan (JP))

    1988-11-30

    Recently, efforts for developing thin-film solar cells aimed to help reduce appliance cost are extensive. Already, amorphous Si solar cells and CdTe solar cells have been introduced to the market as power supply for hand-held calculators and other domestic appliances. Before thin-film solar cells can be used for electric power, the conversion efficiency must be improved. In this circumstance, attention is focused on CuInSe{sub 2} thin-film solar cells. Great efficiency improvement is expected when they are combined with amorphous Si solar cells into a tandem structure. This material will not deteriorate during a reasonable period of use, so it is very reliable. This paper discusses recent activities for developing CuInSe{sub 2} thin-film solar cells and tandem solar cells combining amorphous Si and CuInSe{sub 2} solar cells and discusses the future outlook. 23 refs., 7 figs., 4 tabs.

  17. Thin-film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    A thin-film solar cell with the configuration soda-lime glass ITO/CdS/CdTe/Au was reported earlier to have more than 10% conversion efficiency. To further improve the low-cost potential of the device, an SnO/sub 2/ layer was developed to replace ITO, and a new contact to CdTe using Ni or stainless steel to replace Au. The contact also improves the stability of the device. A low-cost method for monolithic integration of these cells to make a module is discussed. By this method, a module of 32 cm/sup 2/ area and 8.5% efficiency was fabricated. A simple and effective ''cross-cut'' method for minimizing the effects of shorting defects is also described

  18. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  19. Potential of thin-film solar cell module technology

    Science.gov (United States)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  20. Transparent electrode requirements for thin film solar cell modules

    KAUST Repository

    Rowell, Michael W.

    2011-01-01

    The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power conversion efficiency. Reflection, absorption, resistive losses and lost active area either from the scribed interconnect region in monolithically integrated modules or from the shadow losses of a metal grid in standard modules typically reduce the efficiency by 10-25%. Here, we perform calculations to show that a competitive TC must have a transparency of at least 90% at a sheet resistance of less than 10 Ω/sq (conductivity/absorptivity ≥ 1 Ω -1) for monolithically integrated modules. For standard modules, losses are much lower and the performance of alternative lower cost TC materials may already be sufficient to replace conducting oxides in this geometry. © 2011 The Royal Society of Chemistry.

  1. Molecular solution processing of metal chalcogenide thin film solar cells

    Science.gov (United States)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  2. Study of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, H.; Mai, Y. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Wan, M. [Department of Chemistry and Material Science, Hunan Institute of Humanities, Science and Technology, Loudi 417000 (China); Gao, J.; Wang, Y.; He, T.; Feng, Y.; Yin, J.; Du, J.; Wang, J.; Sun, R. [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China); Huang, Y., E-mail: y.huang@btw-solarfilms.com [Baoding Tianwei Solarfilms Co., Ltd., Baoding 071051 (China)

    2013-07-31

    In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. - Highlights: • White polyvinyl butyral and transparent conductive oxide materials are used. • The reflection properties of TCO/Al and TCO/white PVB foil reflectors are studied. • The ZnO:Al and ZnO:B films are used as two types of TCO materials. • TCO/white PVB foil reflector shows a high reflection compared to TCO/Al reflector.

  3. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  4. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  5. Amorphous silicon thin films: The ultimate lightweight space solar cell

    Science.gov (United States)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  6. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  7. A Review on Development Prospect of CZTS Based Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Xiangbo Song

    2014-01-01

    Full Text Available Cu2ZnSnS4 is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4 thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrated and discussed. At last, the development prospect of Cu2ZnSnS4 thin film solar cells was commented.

  8. High-efficient n-i-p thin-film silicon solar cells

    OpenAIRE

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar cells the interfaces between different layers are very important. In this thesis the influence of some important interfaces in the n-i-p configuration solar cells on the solar-cell performance has ...

  9. A New Approach to Light Scattering from Nanotextured Interfaces for Silicon Thin-Film Solar Cells

    OpenAIRE

    Battaglia, Corsin; Domine, Didier René; Haug, Franz-Josef; Ballif, Christophe

    2010-01-01

    A new approach is presented to determine the angular and spectral characteristics of light diffusely scattered from nanotextured front electrodes into the absorbing silicon layer of thin-film silicon solar cell devices.

  10. Advances in thin-film solar cells for lightweight space photovoltaic power

    Science.gov (United States)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  11. Influence of CuxS back contact on CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Zhi; Feng Lianghuan; Zeng Guanggen; Li Wei; Zhang Jingquan; Wu Lili; Wang Wenwu

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  12. Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell

    Directory of Open Access Journals (Sweden)

    J.R. Ray

    2011-01-01

    Full Text Available Molybdenum (Mo thin films are most widely used as an ohmic back-contact in the copper indium diselenide (CIS and its alloy copper indium gallium diselenide (CIGS based thin film solar cell. Radio frequency (RF magnetron sputtering system used to deposit Mo thin films on soda lime glass substrate. The deposition was carried out using argon (Ar gas at different Ar controlled (working pressures (1 mTorr to 10 mTorr and at different RF powers (60 W to 100 W. The influence of both the working pressure and the RF power on the Mo thin films was studied by investigating its structural, morphological, electrical, and optical measurements. The results reveal that a stress-free, low-sheet-resistance (~1 Ω/cm2, and reflecting (~ 55 % Mo thin film was observed at 1 mTorr working pressure and 100 W RF power.

  13. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic subst

  14. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  15. Hydrogen passivation of polycrystalline Si thin film solar cells

    International Nuclear Information System (INIS)

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage VOC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage Vbrk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in Vbrk. Plasma simulations were carried out, which indicate that best VOC corresponds to a minimum in ion energy. VOC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the VOC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in VOC, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature Tdep=200-700 C and were characterized by Raman, ESR and VOC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.1016 cm-3 after passivation was found for poly

  16. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  17. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  18. Hydrogen passivation of polycrystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  19. Broadband Absorption Enhancement in Thin Film Solar Cells Using Asymmetric Double-Sided Pyramid Gratings

    Science.gov (United States)

    Alshal, Mohamed A.; Allam, Nageh K.

    2016-07-01

    A design for a highly efficient modified grating crystalline silicon (c-Si) thin film solar cell is demonstrated and analyzed using the two-dimensional (2-D) finite element method. The suggested grating has a double-sided pyramidal structure. The incorporation of the modified grating in a c-Si thin film solar cell offers a promising route to harvest light into the few micrometers active layer. Furthermore, a layer of silicon nitride is used as an antireflection coating (ARC). Additionally, the light trapping through the suggested design is significantly enhanced by the asymmetry of the top and bottom pyramids. The effects of the thickness of the active layer and facet angle of the pyramid on the spectral absorption, ultimate efficiency (η), and short-circuit current density (J sc) are investigated. The numerical results showed 87.9% efficiency improvement over the conventional thin film c-Si solar cell counterpart without gratings.

  20. Spray-on Thin Film PV Solar Cells: Advances, Potentials and Challenges

    Directory of Open Access Journals (Sweden)

    Morteza Eslamian

    2014-01-01

    Full Text Available The capability to fabricate photovoltaic (PV solar cells on a large scale and at a competitive price is a milestone waiting to be achieved. Currently, such a fabrication method is lacking because the effective methods are either difficult to scale up or expensive due to the necessity for fabrication in a vacuum environment. Nevertheless, for a class of thin film solar cells, in which the solar cell materials can be processed in a solution, up scalable and vacuum-free fabrication techniques can be envisioned. In this context, all or some layers of polymer, dye-sensitized, quantum dot, and copper indium gallium selenide thin film solar cells illustrate some examples that may be processed in solution. The solution-processed materials may be transferred to the substrate by atomizing the solution and carrying the spray droplets to the substrate, a process that will form a thin film after evaporation of the solvent. Spray coating is performed at atmospheric pressure using low cost equipment with a roll-to-roll process capability, making it an attractive fabrication technique, provided that fairly uniform layers with high charge carrier separation and transport capability can be made. In this paper, the feasibility, the recent advances and challenges of fabricating spray-on thin film solar cells, the dynamics of spray and droplet impaction on the substrate, the photo-induced electron transfer in spray-on solar cells, the challenges on characterization and simulation, and the commercialization status of spray-on solar cells are discussed.

  1. Hybrid solar cells using CdS thin films deposited via spray pyrolysis technique

    International Nuclear Information System (INIS)

    The paper presents the photovoltaic performance of hybrid solar cells comprising of thin films of cadmium sulphide and poly(3-hexyl)thiophene. Cadmium sulphide thin films were deposited using spray pyrolysis technique. Current-voltage characterizations were performed for cadmium sulphide/poly(3-hexyl)thiophene heterojunctions in dark and under illumination (100 mWcm−2). The best device yields a short circuit current density of 1.54 mA/cm2, an open circuit voltage of 343 mV, and a power conversion efficiency of 0.15%. - Highlights: • Hybrid solar cells were fabricated using CdS and poly(3-hexyl)thiophene. • CdS thin films were grown by spray pyrolysis technique. • The best cell performance was achieved for the 100 nm thick CdS films. • The highest short circuit current was measured as 1.54 mAcm−2 for the best cell

  2. Grain boundaries in Cu(In,Ga)(Se,S){sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rau, Uwe [Forschungszentrum Juelich, IEF5-Photovoltaik, Juelich (Germany); Taretto, Kurt [Universidad Nacional del Comahue, Dto. de Electrotecnia, Buenos Aires, Neuquen (Argentina); Siebentritt, Susanne [Universite du Luxembourg, Luxembourg (Luxembourg)

    2009-07-15

    The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In,Ga)(S,Se){sub 2} alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In,Ga)(S,Se){sub 2} thin-films. (orig.)

  3. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  4. A Review on Development Prospect of CZTS Based Thin Film Solar Cells

    OpenAIRE

    Xiangbo Song; Xu Ji; Ming Li; Weidong Lin; Xi Luo; Hua Zhang

    2014-01-01

    Cu2ZnSnS4 is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4 thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrate...

  5. Characterization of thin film ZnCdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahammad Hussain, O.; Sreedhara Reddy, P.; Srinivasalu Naidu, B.; Uthanna, S.; Jayarama Reddy, P. (Sri Venkateswara Univ., Tirupati (India). Dept. of Physics)

    1991-07-01

    n-ZnCdS/p-CdTe polycrystalline thin film solar cells were fabricated by laser evaporating CdTe onto sprayed ZnCdS films. The cells were characterized by studying current-voltage, capacitance-voltage and spectral response measurements. A maximum efficiency of 7.6% was observed for a cell area of 1 cm{sup 2}. (author).

  6. Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deckers, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium); Bourgeois, E. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Jivanescu, M. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Abass, A. [Photonics Research Group (INTEC), Ghent University-imec, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); Van Gestel, D.; Van Nieuwenhuysen, K.; Douhard, B. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); D' Haen, J.; Nesladek, M.; Manca, J. [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Gordon, I.; Bender, H. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Stesmans, A. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven (Belgium); Mertens, R.; Poortmans, J. [imec, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); ESAT, KU Leuven, Kardinaal Mercierlaan 94, B-3001 Heverlee, Leuven (Belgium)

    2015-03-31

    We have investigated fine grained polycrystalline silicon thin films grown by direct chemical vapor deposition on oxidized silicon substrates. More specifically, we analyze the influence of the doping type on the properties of this model polycrystalline silicon material. This includes an investigation of defect passivation and benchmarking of minority carrier properties. In our investigation, we use a variety of characterization techniques to probe the properties of the investigated polycrystalline silicon thin films, including Fourier Transform Photoelectron Spectroscopy, Electron Spin Resonance, Conductivity Activation, and Suns-Voc measurements. Amphoteric silicon dangling bond defects are identified as the most prominent defect type present in these layers. They are the primary recombination center in the relatively lowly doped polysilicon thin films at the heart of the current investigation. In contrast with the case of solar cells based on Czochralski silicon or multicrystalline silicon wafers, we conclude that no benefit is found to be associated with the use of n-type dopants over p-type dopants in the active absorber of the investigated polycrystalline silicon thin-film solar cells. - Highlights: • Comparison of n- and p-type absorbers for thin-film poly-Si solar cells • Extensive characterization of the investigated layers' characteristics • Literature review pertaining the use of n-type and p-type dopants in silicon.

  7. Electrochemical etching of molybdenum for shunt removal in thin film solar cells

    NARCIS (Netherlands)

    Hovestad, A.; Bressers, P.M.M.C.; Meertens, R.M.; Frijters, C.H.; Voorthuijzen, W.P.

    2015-01-01

    High yield and reproducible production is a major challenge in up-scaling thin film Cu(In,Ga)Se2(CIGS) solar cells to large area roll-to-roll industrial manufacturing. Pinholes enabling Ohmic contact between the ZnO:Al front-contact and Mo back contact of the CIGS cell create electrical shunts that

  8. The impact of sodium contamination in tin sulfide thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Vera Steinmann

    2016-02-01

    Full Text Available Through empirical observations, sodium (Na has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm−3 to 4.3 × 1017 cm−3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

  9. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    OpenAIRE

    Zong-Liang Tseng; Chien-Hung Chiang; Chun-Guey Wu

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance o...

  10. Disorder improves nanophotonic light trapping in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5—Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut für Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

    2014-03-31

    We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500 nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500 nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

  11. Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

    NARCIS (Netherlands)

    Deelen, J. van; Barink, M.; Klerk, L.; Voorthuijzen, P.; Hovestad, A.

    2015-01-01

    Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result. M

  12. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Donguk [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Park, Young [High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Kim, Minha [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Choi, Youngkwan [Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of); Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Lee, Jaehyoeng, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.

  13. Polyol-mediated Synthesis of Chalcogenide Nanoparticles for Thin-film Solar Cells

    OpenAIRE

    Dong, Hailong

    2014-01-01

    The aim of this work was polyol-mediated syntheses of chalcogenide nanoparticles for printable thin-film solar cells. In this thesis, chalcogenide nanoparticles, such as Cu2Se, In2Se3, CZTS, Se@CuSe and Te@Bi2Te3, have been successfully synthesized via a polyol-mediated method.

  14. Low cost and high performance light trapping structure for thin-film solar cells

    CERN Document Server

    Wang, DongLin; Su, Gang

    2015-01-01

    Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

  15. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  16. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    OpenAIRE

    Söderström, T; Haug, F.-J.; Niquille, X.; Terrazzoni, V; Ballif, C.

    2009-01-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a- Si:H thickness reduction dimi...

  17. Characterization of thin film ZnCdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, O.M.; Reddy, P.S.; Naidu, B.S.; Uthanna, S.; Reddy, P.J. (Sri Venkateswara Univ., Tirupati (IN). Dept. of Physics)

    1991-11-01

    Thin films of II-VI compound semiconductors have attracted considerable interest in recent years due to their wide range of applications in the fabrication of cost effective solar cells. Among these, cadmium telluride is one of the most attractive candidates with a direct band gap of 1.5 eV which is optimum for solar energy conversion. Generally, n-CdS is used as window layer to p-CdTe to fabricate heterojunction solar cells because of its reasonable optical transparency and the ease of depositing low-resistivity films. n-ZnCdS/p-CdTe polycrystalline thin film solar cells were fabricated by laser evaporating CdTe onto sprayed ZnCdS films. The cells were characterized by studying current-voltage, capacitance-voltage and spectral response measurements. A maximum efficiency of 7.6% was observed for a cell area of 1 cm{sup 2}. (author).

  18. MIS and PN junction solar cells on thin-film polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  19. Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian E.; Connor, Stephen T.; Peters, Craig H.

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS

  20. Novel wide band gap materials for highly efficient thin film tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a

  1. Optical Layers for Thin-film Silicon Solar Cells

    OpenAIRE

    Cuony, Peter

    2011-01-01

    In this work we develop and analyze optical layers for use in Micromorph solar cells, a tandem configuration with an amorphous silicon top cell and a microcrystalline silicon bottom cell. The morphology of the front electrode has a decisive role in maximizing the efficiency of a solar cell. To reach a better understanding of the requirements for the front electrode surface, we present a wide range of morphologies that can be obtained with as-grown rou...

  2. Physical basis for the design of CdS/CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D.F. (Mexico)

    2006-04-14

    Solar cells based on polycrystalline semiconductor thin films have great potential for decreasing the cost of photovoltaic energy. However, this kind of solar cells has characteristics very different from those fabricated on crystalline silicon for which the carrier-transport and behavior is clearly known. Instead, for hetero-junction solar cells made on less known polycrystalline materials the design is almost empirical. In this work, several physical aspects related to the behavior of polycrystalline thin film solar cells will be discussed, and some considerations for an adequate design of this kind of solar cells will be made. For example, the recombination at the grain boundaries and its influence on the short circuit current as a function of the crystallite sizes on the active material is considered. Based on this, the appropriate thickness of each layer and their resistivity will be discussed. As an example, these considerations will be applied to CdS/CdTe heterojunction solar cells, taking into account typical properties of CdTe thin films used for solar cells. (author)

  3. Low resistivity molybdenum thin film towards the back contact of dye-sensitized solar cell

    Indian Academy of Sciences (India)

    Vuong Son; Tran Thi Ha; Luong T Thu Thuy; Nguyen Ngoc Ha; Nguyen Duc Chien; Mai Anh Tuan

    2015-12-01

    This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E−6 cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.

  4. Application of rapid thermal processing on SiNx thin film to solar cells

    Institute of Scientific and Technical Information of China (English)

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  5. Performance of thin-film Cds/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, O.M.; Reddy, P.J. (Sri Venkateswara Univ., Tirupati (India). Dept. of Physics)

    1991-07-15

    Cadmium telluride is a very promising material for producing efficient thin-film solar cells because is has a direct bandgap of 1.5 eV, which is optimum for solar energy conversion. Many researchers have employed close space vapour transport, screen printing, thermal evaporation and electrochemical deposition techniques for the fabrication of Cds/CdTe solar cells, and have obtained a conversion efficiency of about 10%. In this investigation polycrystalline thin-film Cds/CdTe solar cells were fabricated by employing a laser evaporation technique for the deposition of CdTe films. The cells were characterized by studying the current-voltage, capacitance-voltage and spectral response measurements. (Author).

  6. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-11-01

    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  7. Failure analysis of thin-film amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  8. Novel Thin Film Solar Cells: Film Formation/Properties and Device Physics

    OpenAIRE

    Song, Tze-Bin

    2015-01-01

    Thin film solar cells have attracted considerable attentions due to their lightweight, low material consumption, ease of fabrication, and potentially high power-conversion efficiency. However, significant cost reductions as well as large-scale production are necessary to compete with the conventional utility power. To reduce cost, vacuum-free manufacture process for each solar cell component is needed. This dissertation focus on novel and cost-effective methods on solution processes of thin f...

  9. Thermal Characteristics of Multilayer Insulation Materials for Flexible Thin-Film Solar Cell Array of Stratospheric Airship

    Directory of Open Access Journals (Sweden)

    Kangwen Sun

    2014-01-01

    Full Text Available Flexible thin-film solar cell is an efficient energy system on the surface of stratospheric airship for utilizing the solar energy. In order to ensure the normal operation of airship platform, the thermal control problem between the flexible thin-film solar cell and the airship envelope should be properly resolved. In this paper, a multilayer insulation material (MLI is developed first, and low temperature environment test is carried out to verify the insulation effect of MLI. Then, a thermal heat transfer model of flexible thin-film solar cell and MLI is proposed, and the equivalent thermal conductivity coefficients of flexible thin-film solar cell and Nomex honeycomb are calculated based on the environment test and the temperature profile of flexible thin-film solar cell versus each layer of MLI. Finally, FLUENT is used for modeling and simulation analysis on the flexible thin-film solar cell and MLI, and the simulation results agree well with the experimental data, which validate the correctness of the proposed heat transfer model of MLI. In some way, our study can provide helpful support for further engineering applications of flexible thin-film solar cell.

  10. Thermally Evaporated Methylammonium Tin Triiodide Thin Films for Lead-Free Perovskite Solar Cell Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue; Zhao, Dewei; Grice, Corey R.; Meng, Weiwei; Wang, Changlei; Liao, Weiqiang; Cimaroli, Alexander J.; Zhang, Hongmei; Zhu, Kai; Yan, Yanfa

    2016-09-16

    We report on the synthesis of methylammonium tin triiodide (MASnI3) thin films at room temperature by a hybrid thermal evaporation method and their application in fabricating lead (Pb)-free perovskite solar cells. The as-deposited MASnI3 thin films exhibit smooth surfaces, uniform coverage across the entire substrate, and strong crystallographic preferred orientation along the <100> direction. By incorporating this film with an inverted planar device architecture, our Pb-free perovskite solar cells are able to achieve an open-circuit voltage (Voc) up to 494 mV. The relatively high Voc is mainly ascribed to the excellent surface coverage, the compact morphology, the good stoichiometry control of the MASnI3 thin films, and the effective passivation of the electron-blocking and hole-blocking layers. Our results demonstrate the potential capability of the hybrid evaporation method to prepare high-quality Pb-free MASnI3 perovskite thin films which can be used to fabricate efficient Pb-free perovskite solar cells.

  11. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro, E-mail: takeuchi@umd.edu [Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States); Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20740 (United States)

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  12. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    International Nuclear Information System (INIS)

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH3NH3PbI3 thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure

  13. Interfacial Properties of CZTS Thin Film Solar Cell

    OpenAIRE

    N. Muhunthan; Om Pal Singh; Thakur, M. K.; P. Karthikeyan; Dinesh Singh; Saravanan, M; V. N. Singh

    2014-01-01

    Cu-deficient CZTS (copper zinc tin sulfide) thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron micro...

  14. Selective Ablation of Thin Films with Picosecond-Pulsed Lasers for Solar Cells

    Science.gov (United States)

    Račiukaitis, G.; Gečys, P.; Gedvilas, M.; Regelskis, K.; Voisiat, B.

    2010-10-01

    Functional thin-films are of high importance in modern electronics for flat panel displays, photovoltaics, flexible and organic electronics. Versatile technologies are required for patterning thin-film materials on rigid and flexible substrates. The large-area applications of thin films such as photovoltaics need high speed and simple to use techniques. Ultra-short laser processing with its flexibility is one of the ways to achieve high quality material etching but optimization of the processes is required to meet specific needs of the applications. Lasers with picosecond pulse duration were applied in selective ablation of conducting, semi-conducting and isolating films in the complex multilayered thin-film solar cells based on amorphous Si and CuInxGa(1-x)Se2 (CIGS) deposited on glass and polymer substrates. Modeling of energy transition between the layers and temperature evolution was performed to understand the processes. Selection of the right laser wavelength was important to keep the energy coupling in a well defined volume at the interlayer interface. Ultra-short pulses ensured high energy input rate into absorbing material permitting peeling of the layers with no influence on the remaining material. Use of high repetition rate lasers with picosecond pulse duration offers new possibilities for high quality and efficiency patterning of advanced materials for thin-film electronics.

  15. Laser process for extended silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hessmann, M.T., E-mail: hessmann@zae.uni-erlangen.de [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Kunz, T.; Burkert, I.; Gawehns, N. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Schaefer, L.; Frick, T.; Schmidt, M. [Bayerisches Laserzentrum, Konrad-Zuse-Str 2-6, 91052 Erlangen (Germany); Meidel, B. [Schott Solar AG, Carl-Zeiss-Strasse 4, 63755 Alzenau (Germany); Auer, R. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Brabec, C.J. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Chair VI - Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen (Germany)

    2011-10-31

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  16. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Directory of Open Access Journals (Sweden)

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  17. Thin film solar cell inflatable ultraviolet rigidizable deployment hinge

    Science.gov (United States)

    Simburger, Edward J. (Inventor); Matsumoto, James H. (Inventor); Giants, Thomas W. (Inventor); Garcia, III, Alec (Inventor); Perry, Alan R. (Inventor); Rawal, Suraj (Inventor); Marshall, Craig H. (Inventor); Lin, John K. H. (Inventor); Day, Jonathan Robert (Inventor); Kerslake, Thomas W. (Inventor)

    2010-01-01

    A flexible inflatable hinge includes curable resin for rigidly positioning panels of solar cells about the hinge in which wrap around contacts and flex circuits are disposed for routing power from the solar cells to the power bus further used for grounding the hinge. An indium tin oxide and magnesium fluoride coating is used to prevent static discharge while being transparent to ultraviolet light that cures the embedded resin after deployment for rigidizing the inflatable hinge.

  18. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. (University of South Florida, Tampa, FL (United States))

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  19. Recent advances in the transparent conducting ZnO for thin-film Si solar cells

    Science.gov (United States)

    Moon, Taeho; Shin, Gwang Su; Park, Byungwoo

    2015-11-01

    The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnO-based transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article. [Figure not available: see fulltext.

  20. Photon management in thin-film solar cells; Photon-Management in Duennschicht-Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Fahr, Stephan

    2011-11-22

    In this thesis procedures were presented, which modify the propagation of the incident light in such a way that by this the efficiency of thin-film solar cells is increased. The strength of the presented numerical studies lies thereby in the rigorous solution of Maxwell's equations. Fundamental statements concerning the lay-out of an ideal texture could be made, which for present thin-film solar cells over the whole relevant spectral range both suppresses reflection losses and leads to an elongation of the effective path. Object of the thesis was also the design of a spectral- and angular-selective filter, which confines the acceptance angle of a solar cell with the aim of an improved absorption in the long-wave spectral region. Furthermore also tandem cells on the base of amorphous and microcrystalline silicon were studied.

  1. Modeling and analysis of CuGaS2 thin-film solar cell

    Science.gov (United States)

    Singh, Pravesh; Gautam, Ruchita; Verma, Ajay Singh; Kumari, Sarita

    2016-05-01

    The authors have performed, the modeling of thin film CuGaS2 based solar cell with ZnTe buffer layer. The efficiency of the cell, short circuit current density and fill factor are calculated. In addition the effect of thickness of absorption layer over performance parameters of the cell is studied and it is found that maximum efficiency of the cell is achieved for 2000 nm thick absorption layer.

  2. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

    OpenAIRE

    Lucia V. Mercaldo; Iurie Usatii; Paola Delli Veneri

    2016-01-01

    The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied wi...

  3. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  4. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647), Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  5. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    Science.gov (United States)

    Cabarrocas, Pere Roca i.; Chaâbane, N.; Kharchenko, A. V.; Tchakarov, S.

    2004-12-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.

  6. Advanced characterization techniques for thin film solar cells

    CERN Document Server

    Rau, Uwe; Kirchartz, Thomas

    2011-01-01

    Written by scientists from leading institutes in Germany, USA and Spain who use these techniques as the core of their scientific work and who have a precise idea of what is relevant for photovoltaic devices, this text contains concise and comprehensive lecture-like chapters on specific research methods.They focus on emerging, specialized techniques that are new to the field of photovoltaics yet have a proven relevance. However, since new methods need to be judged according to their implications for photovoltaic devices, a clear introductory chapter describes the basic physics of thin-film

  7. Development of a high voltage top cell for silicon thin-film solar cells

    OpenAIRE

    Walder , Cordula

    2015-01-01

    he development of multijunction solar cells is a promising approach to increase the efficiency of silicon thin-film photovoltaics. The objective of this work is to investigate how to optimise a high bandgap top cell and if the use of hydrogenated amorphous silicon alloys (a-SiO:H, a-SiC:H) as absorber materials is reasonable. According to the simulation results of this work, hydrogenated amorphous silicon (a-Si:H) is the preferable top cell absorber material for a triple cell. However, for a ...

  8. Processing and modeling issues for thin-film solar cell devices. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

    1997-11-01

    During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

  9. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  10. Correlating the Polymorphism of Titanyl Phthalocyanine Thin Films with Solar Cell Performance.

    Science.gov (United States)

    Vasseur, Karolien; Rand, Barry P; Cheyns, David; Temst, Kristiaan; Froyen, Ludo; Heremans, Paul

    2012-09-01

    The structure of titanyl phthalocyanine (TiOPc) thin films is correlated with photovoltaic properties of planar heterojunction solar cells by pairing different TiOPc polymorph donor layers with C60 as an acceptor. Solvent annealing and the insertion of two different templating layers, namely 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and CuI, prove to be effective methods to control the TiOPc thin film structure. The crystal phase of TiOPc thin films was identified by combining X-ray reflectivity (XRR) measurements with spectroscopic techniques, including absorption and micro-Raman measurements. Implementation of a donor layer with an absorption spectrum extending into the near-infrared (NIR) led to solar cells with external quantum efficiencies (EQEs) above 27% from λ = 600 - 890 nm, with the best device yielding a power conversion efficiency (PCE) of 2.6%. Our results highlight the need to understand the relationship between processing parameters and thin film structure, as these have important consequences on device performance.

  11. Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

    Science.gov (United States)

    Vismara, R.; Isabella, O.; Zeman, M.

    2016-04-01

    Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

  12. Elongated Nanostructures for Radial Junction Thin Film Solar Cells

    NARCIS (Netherlands)

    Kuang, Y.

    2014-01-01

    In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber layer primarily is the reduced consumption of material and energy during production, but also the increased production rates and lower cost. While this is of interest to al

  13. Thermal Characteristics of Multilayer Insulation Materials for Flexible Thin-Film Solar Cell Array of Stratospheric Airship

    OpenAIRE

    Kangwen Sun; Qinzhen Yang; Yang Yang; Shun Wang; Jianming Xu; Qiang Liu; Yong Xie; Peng Lou

    2014-01-01

    Flexible thin-film solar cell is an efficient energy system on the surface of stratospheric airship for utilizing the solar energy. In order to ensure the normal operation of airship platform, the thermal control problem between the flexible thin-film solar cell and the airship envelope should be properly resolved. In this paper, a multilayer insulation material (MLI) is developed first, and low temperature environment test is carried out to verify the insulation effect of MLI. Then, a therma...

  14. Development of a thin film solar cell interconnect for the PowerSphere concept

    International Nuclear Information System (INIS)

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  15. Development of a Thin Film Solar Cell Interconnect for the Powersphere Concept

    Science.gov (United States)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen

    2003-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the Powersphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference.

  16. Characterization of Thin Films for Polymer Solar Cells

    DEFF Research Database (Denmark)

    Tromholt, Thomas

    of the main topics during this PhD, where the construction and development of light concentrators, both by sun light as well as artificial light, was given extensive attention. This resulted in three different light concentrators, a lens based solar concentrator, a mirror based solar concentrator...... of stability of the cells was found to be highly complex and effects not dominant at 1 sun were observed. Thus, specific knowledge of the response of the different layers to concentrated light is needed to use concentrated light as a valid acceleration parameter (Chapter 5)....

  17. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    OpenAIRE

    Walder Cordula; Kellermann Martin; Wendler Elke; Rensberg Jura; von Maydell Karsten; Agert Carsten

    2015-01-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or ...

  18. Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Battaglia, Corsin; Escarré, Jordi; SöDerströM, Karin; Erni, Lukas; Ding, Laura; Bugnon, Grégory; Billet, Adrian; Boccard, Mathieu; Barraud, Loris; De Wolf, Stefaan; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

    2011-01-01

    We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current d...

  19. Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique

    OpenAIRE

    Meier, Johannes; Vallat-Sauvain, Evelyne; Dubail, S.; Kroll, U.; Dubail, J.; Golay, S.; Feitknecht, Luc; Torres, Pedro; Faÿ, Sylvie; Fischer, D.; Shah, Arvind

    2008-01-01

    Hydrogenated microcrystalline silicon prepared at low temperatures by the glow discharge technique is examined here with respect to its role as a new thin-film photovoltaic absorber material. XRD and TEM characterisations reveal that microcrystalline silicon is a semiconductor with a very complex morphology. Microcrystalline p–i–n cells with open-circuit voltages of up to 560–580 mV could be prepared. “Micromorph” tandem solar cells show under outdoor conditions higher short-circuit currents ...

  20. Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells.

    Science.gov (United States)

    Dai, Pengcheng; Zhang, Guan; Chen, Yuncheng; Jiang, Hechun; Feng, Zhenyu; Lin, Zhaojun; Zhan, Jinhua

    2012-03-21

    Porous copper zinc tin sulfide (CZTS) thin film was prepared via a solvothermal approach. Compared with conventional dye-sensitized solar cells (DSSCs), double junction photoelectrochemical cells using dye-sensitized n-type TiO(2) (DS-TiO(2)) as the photoanode and porous p-type CZTS film as the photocathode shows an increased short circuit current, external quantum efficiency and power conversion efficiency. PMID:22322239

  1. Thin film CdS/CdTe solar cells: Research perspectives

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [CINVESTAV del IPN, Department of Electrical Engineering, Avenida IPN No. 2508, 07360 Mexico DF (Mexico)

    2006-06-15

    Polycrystalline thin film CdTe continues to be a leading material for the development of cost effective and reliable photovoltaics. The two key properties of this material are its band gap (1.5eV), close to the ideal for photovoltaic conversion efficiency (1.45eV), and its high optical absorption coefficient. Thin film CdTe solar cells are typically hetero-junctions with CdS being the n-type partner, or window layer. Efficiencies as high as 16.5% have been achieved, but still there is some potential for increasing them. We make an analysis of the typical CdS/CdTe superstrate solar cell, and from it we establish critical issues and different lines of research in order to improve the current efficiencies. We also show that present record efficiencies are very close to the practical efficiency limit for a CdS/CdTe hetero-junction cell. (author)

  2. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Directory of Open Access Journals (Sweden)

    Wang Lan

    2016-01-01

    Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  3. Thin-film solar cells on perlite glass-ceramic substrates

    Science.gov (United States)

    Petrosyan, Stepan G.; Babayan, Virab H.; Musayelyan, Ashot S.; Harutyunyan, Levon A.; Zalesski, Valery B.; Kravchenko, Vladimir M.; Leonova, Tatyana R.; Polikanin, Alexander M.; Khodin, Alexander A.

    2013-06-01

    For the first time, thin-film CIGS solar cells have been fabricated by co-evaporation on specially developed non-conducting perlite (an aluminum potassium sodium silicate natural mineral of volcanic origin) glass-ceramic substrates to develop a fully integrated photovoltaic and building element. Such glass-ceramic material can meet the physical requirements to solar cells substrates as well as the cost goals. The preliminary data presented show that CIGS solar cells deposited on ceramic substrates can exhibit efficiency higher than 10%.

  4. Approaching the Lambertian limit in randomly textured thin-film solar cells.

    Science.gov (United States)

    Fahr, Stephan; Kirchartz, Thomas; Rockstuhl, Carsten; Lederer, Falk

    2011-07-01

    The Lambertian limit for solar cells is a benchmark for evaluating their efficiency. It has been shown that the performance of either extremely thick or extremely thin solar cells can be driven close to this limit by using an appropriate photon management. Here we show that this is likewise possible for realistic, practically relevant thin-film solar cells based on amorphous silicon. Most importantly, we achieve this goal by relying on random textures already incorporated into state-of-the-art superstrates; with the only subtlety that their topology has to be downscaled to typical feature sizes of about 100 nm.

  5. Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar Cells.

    Science.gov (United States)

    Sharenko, Alexander; Toney, Michael F

    2016-01-20

    Solution-processed lead halide perovskite thin-film solar cells have achieved power conversion efficiencies comparable to those obtained with several commercial photovoltaic technologies in a remarkably short period of time. This rapid rise in device efficiency is largely the result of the development of fabrication protocols capable of producing continuous, smooth perovskite films with micrometer-sized grains. Further developments in film fabrication and morphological control are necessary, however, in order for perovskite solar cells to reliably and reproducibly approach their thermodynamic efficiency limit. This Perspective discusses the fabrication of lead halide perovskite thin films, while highlighting the processing-property-performance relationships that have emerged from the literature, and from this knowledge, suggests future research directions.

  6. Radiation resistance of thin-film solar cells for space photovoltaic power

    Science.gov (United States)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  7. Peel-and-Stick: Fabricating Thin Film Solar Cell on Universal Substrates

    OpenAIRE

    Chi Hwan Lee; Dong Rip Kim; In Sun Cho; Nemeth William; Qi Wang; Xiaolin Zheng

    2012-01-01

    Fabrication of thin-film solar cells (TFSCs) on substrates other than Si and glass has been challenging because these nonconventional substrates are not suitable for the current TFSC fabrication processes due to poor surface flatness and low tolerance to high temperature and chemical processing. Here, we report a new peel-and-stick process that circumvents these fabrication challenges by peeling off the fully fabricated TFSCs from the original Si wafer and attaching TFSCs to virtually any sub...

  8. Positron annihilation study on CuInSe2 solar cell thin films

    International Nuclear Information System (INIS)

    Positron annihilation spectroscopy has been used to investigate CuInSe2 solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe2 thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. - Highlights: ► As-grown CuInSe2 thin films contain large concentration of defects. ► A defect layer of about 50 nm exists in the CuInSe2 thin film surface. ► The defect concentration in the defect layer can be greatly reduced.

  9. Positron annihilation study on CuInSe{sub 2} solar cell thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lijuan [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Wang, Tao [Institute of Fluid Physics, CAEP, P.O. Box 919-106, Mianyang 621900 (China); Li, Ji [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Hao, Yingping; Liu, Jiandang [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Peng [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Cheng, Bin [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Zhongwei [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Wang, Baoyi [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)

    2012-12-15

    Positron annihilation spectroscopy has been used to investigate CuInSe{sub 2} solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe{sub 2} thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. - Highlights: Black-Right-Pointing-Pointer As-grown CuInSe{sub 2} thin films contain large concentration of defects. Black-Right-Pointing-Pointer A defect layer of about 50 nm exists in the CuInSe{sub 2} thin film surface. Black-Right-Pointing-Pointer The defect concentration in the defect layer can be greatly reduced.

  10. Low temperature p+ nc-Si:H window layers for large area thin-film solar cells

    OpenAIRE

    Tse, Wing Fai Lydia

    2007-01-01

    Hydrogenated nanocrystalline silicon (nc-Si:H) has attracted attention recently over amorphous silicon (a-Si:H) for use in thin-film solar cell applications primarily due to its higher stability and light absorbing capacity. In addition, there is increasing interest in device fabrication on low-cost, light weight and flexible substrates where optimizing deposition conditions of nc-Si:H thin films at low substrate temperatures (< 200 °C) poses challenges. In such solar cells, the thin boron...

  11. First principles study of Bi dopen CdTe thin film solar cells: electronic and optical properties

    OpenAIRE

    Seminóvski Pérez, Yohanna; Palacios Clemente, Pablo; Wahnón Benarroch, Perla

    2011-01-01

    Nowadays, efficiency improvement of solar cells is one of the most important issues in photovoltaic systems and CdTe is one of the most promising thin film photovoltaic materials we can found. CdTe reported efficiencies in solar energy conversion have been as good as that found in polycrystalline Si thin film cell [1], besides CdTe can be easily produced at industrial scale.

  12. Thin film CdS/Cu/sub 2/S solar cells by chemical spraying

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, J.F.

    1976-12-15

    This project involves further work on a process developed to make very thin film CdS/Cu/sub 2/S solar cells. The process is adapted to the float glass process and consists of spraying suitable chemicals on a moving ribbon of glass which floats on a bath of molten metal. The spraying produces the necessary thin films (with suitable optical and electrical properties) of SnO/sub 2/, CdS and Cu/sub 2/S. The CdS films produced are two to three microns thick, thus conserving the use of cadmium. The estimated cost per peak watt is approximately 7 cents (1975 costs) at 5 percent efficiency and an output of 37.6 x 10/sup 6/ square meters annually. The cells are blackwall cells. A float glass plant modified for the process is shown schematically. Research progress is described.

  13. 3D photonic crystal intermediate reflector for micromorph thin-film tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Uepping, Johannes; Miclea, Paul T.; Wehrspohn, Ralf B. [Institute of Physics, Martin-Luther-University of Halle-Wittenberg, Heinrich-Damerow-Str. 4, 06120 Halle (Germany); Rockstuhl, Carsten; Lederer, Falk [Institute of Condensed Matter Theory and Solid States Optics, Friedrich Schiller University Jena, 07743 Jena (Germany); Peters, Marius [Freiburg Centre for Material Research, University of Freiburg, 79104 Freiburg (Germany); Steidl, Lorenz; Zentel, Rudolf [Dept. of Chemistry, Pharmacy and Earth Science, Johannes Gutenberg University of Mainz, Duesbergweg 10-14 (Germany); Lee, Seung-Mo; Knez, Mato [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Lambertz, Andreas; Carius, Reinhard [Institute of Energy Research, IEF-5 Photovoltaics, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Bielawny, Andreas

    2008-12-15

    The concept of 3D photonic intermediate reflectors for micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/{mu}c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell. It is one goal to provide an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally selective intermediate reflective layer (IRL) is necessary, which is less dependent of the angle of incidence than state-of-the-art thickness dependent massive interlayers. The design, preparation and characterization of a 3D photonic thin-film filter device for this purpose has been pursued straight forward in simulation and experimental realization. The inverted opal is capable of providing a suitable optical band stop with high reflectance and the necessary long wavelength transmittance as well and provides further options for improved light trapping. We have determined numerically the relative efficiency enhancement of an a-Si/{mu}c-Si tandem solar cell using a conductive 3D-photonic crystal. We have further fabricated such structures by ZnO-replication of polymeric opals using chemical vapour deposition and atomic layer deposition techniques and present the results of their characterization. Thin film photonic IRL have been prepared at the rear side of a-Si solar cells. Completed with a back contact, this is the first step to integrate this novel technology into an a-Si/{mu}c-Si tandem solar cell process. The spectral response of the cell is presented and compared with reference cells. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Cross-sectional electrostatic force microscopy of thin-film solar cells

    Science.gov (United States)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-01

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II-VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO2/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface (±50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  15. Analysis of the p+/p window layer of thin film solar cells by simulation

    Institute of Scientific and Technical Information of China (English)

    林爱国; 丁建宁; 袁宁一; 王书博; 程广贵; 卢超

    2012-01-01

    The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program.The differences between p+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration,thickness of p+-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p+-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.

  16. Analysis of the p+/p window layer of thin film solar cells by simulation

    International Nuclear Information System (INIS)

    The application of a p+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-1D program. The differences between p+−p—i—n configuration solar cells and p—i—n configuration solar cells are pointed out. The effects of dopant concentration, thickness of p+-layer, contact barrier height and defect density on solar cells are analyzed. Our results indicate that solar cells with a p+−p—i—n configuration have a better performance. The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p+ layer and lowering the front contact barrier height. The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property. (semiconductor materials)

  17. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    OpenAIRE

    Boccard Mathieu; Cuony Peter; Hänni Simon; Stuckelberger Michael; Haug Franz-Josef; Meillaud Fanny; Despeisse Matthieu; Ballif Christophe

    2014-01-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but ...

  18. Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

    Directory of Open Access Journals (Sweden)

    Gabriel Onno

    2014-02-01

    Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

  19. Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique.

    Science.gov (United States)

    Schuster, Christian S; Kowalczewski, Piotr; Martins, Emiliano R; Patrini, Maddalena; Scullion, Mark G; Liscidini, Marco; Lewis, Liam; Reardon, Christopher; Andreani, Lucio C; Krauss, Thomas F

    2013-05-01

    Thin film solar cells benefit significantly from the enhanced light trapping offered by photonic nanostructures. The thin film is typically patterned on one side only due to technological constraints. The ability to independently pattern both sides of the thin film increases the degrees of freedom available to the designer, as different functions can be combined, such as the reduction of surface reflection and the excitation of quasiguided modes for enhanced light absorption. Here, we demonstrate a technique based on simple layer transfer that allows us to independently pattern both sides of the thin film leading to enhanced light trapping. We used a 400 nm thin film of amorphous hydrogenated silicon and two simple 2D gratings for this proof-of-principle demonstration. Since the technique imposes no restrictions on the design parameters, any type of structure can be made.

  20. Design principle for absorption enhancement with nanoparticles in thin-film silicon solar cells

    International Nuclear Information System (INIS)

    The use of nanoparticles in solar cells has created many controversies. In this paper, different mechanisms of nanoparticles with different materials with diameters varying from 50 to 200 nm, surface coverage at 5, 20, and 60 %, and different locations are analyzed systematically for efficient light trapping in a thin-film c-Si solar cell. Mie theory and the finite difference time domain method are used for analysis to give a design principle with nanoparticles for the solar cell application. Metals exhibit plasmonic resonances and angular scattering, while dielectrics show anti-reflection and scattering in the incident direction. A table is given to summarize the advantages and disadvantages in different conditions. The silicon absorption enhancement with nanoparticles on top is mainly in the shorter wavelengths below 700 nm, and both Al and SiO2 nanoparticles with diameter around 100 nm show the most significant enhancement. The silicon absorption enhancement with embedded nanoparticles takes place in the longer wavelengths over 700 nm, and Ag and SiO2 nanoparticles with larger diameter around 200 nm perform better. However, the light absorbed by Ag nanoparticles will be converted to heat and will lead to decrease in cell efficiency; hence, the choice of metallic nanoparticles in applications to solar cells should be carefully considered. The design principle proposed in this work gives a guideline by choosing reasonable parameters for the different requirements in the application of thin-film solar cells

  1. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    International Nuclear Information System (INIS)

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu2-xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells

  2. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  3. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambade, Swapnil B. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Mane, R.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Kale, S.S. [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of); Sonawane, S.H. [Department of Chemical Engineering, Vishwakarma Institute of Technology, Pune 411037 (India); Shaikh, Arif V. [Department of Electronic Science, AKI' s Poona College of Arts, Science and Commerce, Camp, Pune 411 001 (India); Han, Sung-Hwan [Inorganic Nanomaterials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)]. E-mail: shhan@hanyang.ac.kr

    2006-12-15

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 deg. C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu{sub 2-x}Se phase was confirmed by XRD pattern and spherical grains of 30 {+-} 4 - 40 {+-} 4 nm in size aggregated over about 130 {+-} 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm{sup 2} light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  4. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  5. Sinusoidal nanotextures for light management in silicon thin-film solar cells

    Science.gov (United States)

    Köppel, G.; Rech, B.; Becker, C.

    2016-04-01

    Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

  6. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Science.gov (United States)

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-06-01

    In this study, the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si (n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  7. n +-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells

    Science.gov (United States)

    Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao

    2016-10-01

    In this study, the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n +-microcrystalline-Si ( n +-μc-Si) tunnel layer deposited using the laser-assisted plasma-enhanced chemical vapor deposition was inserted between the p-SiC/ i-Si/ n-Si cell and the p-SiC/ i-SiGe/ n-Si cell. Since both the plasma and the CO2 laser were simultaneously utilized to efficiently decompose the reactant and doping gases, the carrier concentration and the carrier mobility of the n +-μc-Si tunnel layer were significantly improved. The ohmic contact formed between the p-SiC layer and the n +-μc-Si tunnel layer with low resistance was beneficial to the generated current transportation and the carrier recombination rate. Therefore, the conversion efficiency of the tandem solar cells was promoted from 8.57% and 8.82% to 9.91% compared to that without tunnel layer and with 5-nm-thick n +-amorphous-Si tunnel layer.

  8. Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

    Science.gov (United States)

    Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

    2013-05-22

    Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film. PMID:23611655

  9. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

    Directory of Open Access Journals (Sweden)

    Lucia V. Mercaldo

    2016-03-01

    Full Text Available The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied within thin-film Si solar cells for these purposes. Intrinsic a-SiOx:H films have been fabricated and characterized as a promising wide gap absorber for application in triple-junction solar cells. Single-junction test devices with open circuit voltage up to 950 mV and ~1 V have been demonstrated, in case of rough and flat front electrodes, respectively. Doped silicon oxide alloys with mixed-phase structure have been developed, characterized by considerably lower absorption and refractive index with respect to standard Si-based films, accompanied by electrical conductivity above 10−5 S/cm. These layers have been successfully applied both into single-junction and micromorph tandem solar cells as superior doped layers with additional functionalities.

  10. Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

    International Nuclear Information System (INIS)

    We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl3 emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.

  11. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  12. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

    Science.gov (United States)

    Neumüller, A.; Bereznev, S.; Ewert, M.; Volobujeva, O.; Sergeev, O.; Falta, J.; Vehse, M.; Agert, C.

    2016-07-01

    In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

  13. Present status of the development of thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Solar Energy Research Inst., Golden, CO (USA))

    1989-01-01

    The principle types of thin-film solar cells are based on single-junction and multi-junction hydrogenated amorphous silicon (a-Si:H), copper indium diselenide (CuInSe{sub 2}) and cadmium telluride (CdTe). Impressive gains in the performance of these cells have been reported in recent months. The problem of contacts to CdTe cells has been circumvented, resulting in the development of stable 11% efficient n-CdS/i-CdTe/p-ZnTe heterostructure solar cells. Total small-area (1 cm {sup 2}) efficiencies which have been measured at SERI under standard conditions (global AM 1.5) are as follows: single-junction a-Si:h, 11.5-12%; triple-junction a-Si:H:F, 12.4% (active area 13.3%); CuGaInSe {sub 2}, 14.1% (active area); CdTe, 10-11%; and CuInSe{sub 2}-a-Si:H cascade cells, 14.6%. Hydrogenated amorphous silicon solar-cell panels are being commercialized in several countries. Small-scale production of CdTe panels has also been undertaken. Recently, a CuInSe{sub 2} module with the world's highest thin-film module efficiency, 11.1% , an aperture area of 938 cm{sup 2} and a total power of 10.4 W, has been tested at SERI. (author).

  14. Photonic and plasmonic structures for enhancing efficiency of thin film silicon solar cells

    Science.gov (United States)

    Pattnaik, Sambit

    Crystalline silicon solar cells use high cost processing techniques as well as thick materials that are ˜ 200µm thick to convert solar energy into electricity. From a cost viewpoint, it is highly advantageous to use thin film solar cells which are generally made in the range of 0.1-3µm in thickness. Due to this low thickness, the quantity of material is greatly reduced and so is the number and complexity of steps involved to complete a device, thereby allowing a continuous processing capability improving the throughput and hence greatly decreasing the cost. This also leads to faster payback time for the end user of the photovoltaic panel. In addition, due to the low thickness and the possibility of deposition on flexible foils, the photovoltaic (PV) modules can be flexible. Such flexible PV modules are well suited for building-integrated applications and for portable, foldable, PV power products. For economical applications of solar cells, high efficiency is an important consideration. Since Si is an indirect bandgap material, a thin film of Si needs efficient light trapping to achieve high optical absorption. The previous work in this field has been mostly based on randomly textured back reflectors. In this work, we have used a novel approach, a periodic photonic and plasmonic structure, to optimize current density of the devices by absorbing longer wavelengths without hampering other properties. The two dimensional diffraction effect generated by a periodic structure with the plasmonic light concentration achieved by silver cones to efficiently propagate light in the plane at the back surface of a solar cell, achieves a significant increase in optical absorption. Using such structures, we achieved a 50%+ increase in short circuit current in a nano-crystalline (nc-Si) solar cell relative to stainless steel. In addition to nc-Si solar cells on stainless steel, we have also used the periodic photonic structure to enhance optical absorption in amorphous cells and

  15. Performance of thin-film CdS/CdTe solar cells

    Science.gov (United States)

    Hussain, O. M.; Reddy, P. J.

    1991-07-01

    A polycrystalline thin-film CdS/CdTe solar cell has been fabricated by means of a laser evaporation of CdTe onto thermally-evaporated CdS films. The cell has demonstrated a maximum efficiency of about 8.25 percent, in conjunction with a quantum efficiency of about 80 percent. The In-doped CdS 0.5-micron thick films were deposited onto conducting glass substrates at 473 K and annealed at 673 K in a hydrogen atmosphere; the Sb-doped CdTe 5-micron thickness films were deposited and then heat-treated in air at 673 K.

  16. Back contact buffer layer for thin-film solar cells

    Science.gov (United States)

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  17. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    International Nuclear Information System (INIS)

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  18. Method of making a thin film cadmium telluride solar cell

    International Nuclear Information System (INIS)

    A method for making a photovoltaic cell is described comprising the steps of: (a) depositing a transparent or semi-transparent conductive window layer onto a substrate; (b) depositing a layer of cadmium telluride including phosphorus onto the window layer; (c) depositing a layer of lead telluride onto the layer of cadmium telluride; and (d) depositing a metallic electrode onto the lead telluride layer

  19. Research on the optimum hydrogenated silicon thin films for application in solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃. The electrical,structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (Ⅰ - Ⅴ) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

  20. Defect annealing processes for polycrystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steffens, S., E-mail: simon.steffens@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Berlin (Germany); Becker, C. [Helmholtz-Zentrum Berlin, Berlin (Germany); Zollondz, J.-H., E-mail: hzollondz@masdarpv.com [CSG Solar AG, Thalheim (Germany); Chowdhury, A.; Slaoui, A. [L’Institut d’Électronique du Solide et des Systèmes, Strasbourg (France); Lindekugel, S. [Fraunhofer-Institut für Solare Energiesysteme, Freiburg (Germany); Schubert, U.; Evans, R. [Suntech R and D Australia Pty Ltd, Sydney (Australia); Rech, B. [Helmholtz-Zentrum Berlin, Berlin (Germany)

    2013-05-15

    Highlights: ► Defect annealing processes were applied to polycrystalline silicon thin films. ► Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ► The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ► Increase in Sun's-V{sub OC} values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ► Solar cells were fabricated for I–V-measurements: Best solar cell efficiency of 6.7%. -- Abstract: A variety of defect healing methods was analyzed for optimization of polycrystalline silicon (poly-Si) thin-film solar cells on glass. The films were fabricated by solid phase crystallization of amorphous silicon deposited either by plasma enhanced chemical vapor deposition (PECVD) or by electron-beam evaporation (EBE). Three different rapid thermal processing (RTP) set-ups were compared: A conventional rapid thermal annealing oven, a dual wavelength laser annealing system and a movable two sided halogen lamp oven. The two latter processes utilize focused energy input for reducing the thermal load introduced into the glass substrates and thus lead to less deformation and impurity diffusion. Analysis of the structural and electrical properties of the poly-Si thin films was performed by Suns-V{sub OC} measurements and Raman spectroscopy. 1 cm{sup 2} cells were prepared for a selection of samples and characterized by I–V-measurements. The poly-Si material quality could be extremely enhanced, resulting in increase of the open circuit voltages from about 100 mV (EBE) and 170 mV (PECVD) in the untreated case up to 480 mV after processing.

  1. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    -film semiconducting material. For a particular case, we show that coupling to the same type of localized slab-waveguide modes can be obtained by a surface modulation consisting of purely dielectric strips. The purely dielectric device turns out to have a significantly higher broadband enhancement factor compared...... to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic...

  2. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2016-02-01

    Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  3. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  4. Defect levels in CdS/CuInSe/sub 2/ thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ramanathan, V.; Noufi, R.; Powell, R.C.

    1988-02-15

    Thermally stimulated capacitance spectroscopy has been employed to study the defect levels in high-efficiency, CdS/CuInSe/sub 2/ thin-film solar cells. Voltage bias changes were used to probe the majority-carrier traps and light bias was employed, for the first time, to reveal minority-carrier traps. The light bias thermally stimulated capacitance has shown the presence of a distribution of electron trapping levels in CuInSe/sub 2/. The capacitance under steady illumination shows that the traps produce a large photocapacitance. The implications of these observations in terms of device performance is discussed.

  5. Amorphous Hydrogenated Carbon-Nitrogen Alloy Thin Films for Solar Cell Application

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Bin; DING Zheng-Ming; PANG Qian-Jun; CUI Rong-Qiang

    2001-01-01

    Amorphous hydrogenated carbon-nitrogen alloy (a-CNx :H) thin films have been deposited on silicon substratesby improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. Thefilms are investigated by using Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cell application is discussed. Thephotovoltaic property of a-CNx:H/silicon heterojunctions can be improved by the adjustment of the pressureratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open-circuit voltage and short-circuitcurrent reach 300mV and 5.52 Ma/cm2, respectively.

  6. Unlinking absorption and haze in thin film silicon solar cells front electrodes

    OpenAIRE

    Boccard, Mathieu; Cuony, Peter; Battaglia, Corsin; Despeisse, Matthieu; Ballif, Christophe

    2010-01-01

    We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi-layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for...

  7. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    OpenAIRE

    Hongxia Wang

    2011-01-01

    The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,Ga)Se2 (CIGS) in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS) semiconductor material has emerged as one of the most promising candidates for this aim and h...

  8. Large CZTS Nanoparticles Synthesized by Hot-Injection for Thin Film Solar Cells.

    OpenAIRE

    Engberg, Sara Lena Josefin; Lam, Yeng Ming; Schou, Jørgen

    2015-01-01

    The kesterite material, Cu2ZnSn(SxSe1-x)4 (CZTS), shows great promise as the absorber layer for future thin film solar cells. Solution processing allows for comparatively fast and inexpensive fabrication, and holds the record efficiency in the kesterite family. However, for nanoparticle (NP) solution processing to be a feasible fabrication route, the amount of carbon in the film has to be limited. In our work, we try to limit the organic material in the film by synthesizing larger NPs. Larger...

  9. Analysis of the diode characteristics of thin film solar cells based on CdTe

    International Nuclear Information System (INIS)

    A physical approach to the optimization of photoelectric processes in thin film multilayer systems has been developed. By means of a simulation of the influence of light-diode characteristics on the efficiency factor, it is concluded that the optimization of the photoelectric processes in ITO/CdS/CdTe/Cu/Au film solar cells is mainly determined by two competing physical mechanisms: an increase in the efficiency of the process of distribution of nonequilibrium charge carriers and a reduction in the efficiency of their generation, as the CdS layer thickness grows

  10. Doping-free fabrication of silicon thin films for schottky solar cell.

    Science.gov (United States)

    Yun, Ju-Hyung; Park, Yun Chang; Yi, Junsin; Woo, Chang Su; Kim, Joondong

    2012-02-01

    Thin film Schottky solar cells were fabricated without doping processes, which may provide an alternative approach to the conventional thin film solar cells in the n-i-p configuration. A thin Co layer was coated on a substrate, which worked as a back contact metal and then Si film was grown above it. Deposition condition may modulate the Si film structure to be a fully amorphous Si (a-Si) or a mixing of microcrystalline Si (mc-Si) and a-Si. A thin Au layer was deposited above the grown Si films, which formed a Schottky junction. Two types of Schottky solar cells were prepared on a fully a-Si film and a mixing of mc-Si and a-Si film. Under one sun illumination, the mixing of mc-Si and a-Si device provided 35% and 68.4% enhancement in the open circuit voltage and fill factor compared to that of the amorphous device.

  11. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fonash, S.J. [Pennsylvania State Univ., University Park, PA (United States)

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  12. 13.4% efficient thin-film CdS/CdTe solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Ferekides, C.; Wu, C. Q.; Britt, J.; Wang, C.

    1991-12-01

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.

  13. 13. 4% efficient thin-film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.; Chu, S.S.; Ferekides, C.; Wu, C.Q.; Britt, J.; Wang, C. (Department of Electrical Engineering, University of South Florida, Tampa, Florida (USA))

    1991-12-15

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and {ital p}-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of {ital p}-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm{sup 2} area with an AM 1.5 efficiency of 13.4% are reported.

  14. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 1, April 9-July 8, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K.

    1979-08-01

    Preparation and properties of cadmium telluride thin films for use in solar cells are studied. CdTe sputter deposition, crystal doping, and carrier typing are discussed. Future experimental plans are described. (WHK)

  15. Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells%Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    岳红云; 吴爱民; 秦福文; 李廷举

    2011-01-01

    Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1:1 and 2:3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.

  16. Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

    Science.gov (United States)

    Fang, Fang

    2011-12-01

    Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a

  17. Crystalline silicon thin-film solar cells. Final report; Duennschicht-Solarzellen aus kristallinem Silizium. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Raeuber, A.; Wettling, W.; Eyer, A.; Faller, F.; Hebling, C.; Hurrle, A.; Lautenschlager, H.; Luedemann, R.; Lutz, F.; Reber, S.; Schetter, C.; Schillinger, N.; Schindler, R.; Schumacher, J.O.; Warta, W.

    1998-09-01

    Activities under the project covered all the processes involved in the fabrication of a crystalline silicon thin-film solar cell applying the high-temperature method, so that R and D work was carried out from testing of materials suitable for the dielectric and semiconductive layers required, development of the process sequences for fabrication of the solar cells, simulation and optimisation of the cell design through to final characterisation of the thin films and solar cells. Several cell designs were tested in parallel for intercomparison. Several high-temperature resistant materials were tested for their suitability to serve as substrate materials.The final project report presents the basic research work and studies on the physical and technological aspects of the crystalline thin-film solar cell as well as the major results of specific development work. The report shows that significant progress could be achieved. The efficiencies of all solar cell designs developed under the project are between 9 and 11%, including those using substrate materials easily available in industry, and it could be demonstrated that the solar cells are equal in potential to the wafer-based silicon cell. (orig./CB) [Deutsch] Es wurden alle wesentlichen Teilprozesse, die fuer die Entwicklung einer kristallinen Silicium Duennschicht-Solarzelle nach dem Hochtemperaturverfahren wichtig sind, bearbeitet. Der Projektrahmen reichte von der Materialentwicklung fuer die dielektrischen und halbleitenden Schichten ueber die Entwicklung der Solarzellenprozessschritte, die Simulation und Optimierung des Zellendesigns bis zur Charakterisierung von Schichten und Solarzellen. Dabei wurden mehrere verschiedene Zellentypen parallel untersucht und miteinander verglichen. In einer Studie wurden verschiedene hochtemperaturfeste Materialien auf ihre Eignung als Substrate hin untersucht. In dem hier vorgelegten Abschlussbericht werden die erarbeiteten Grundlagen zur Physik und Technologie der kristallinen

  18. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  19. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  20. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  1. Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

    NARCIS (Netherlands)

    ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

    2015-01-01

    Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical characteristic

  2. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  3. Development towards cell-to-cell monolithic integration of a thin-film solar cell and lithium-ion accumulator

    Science.gov (United States)

    Agbo, Solomon N.; Merdzhanova, Tsvetelina; Yu, Shicheng; Tempel, Hermann; Kungl, Hans; Eichel, Rüdiger-A.; Rau, Uwe; Astakhov, Oleksandr

    2016-09-01

    This work focuses on the potentials of monolithic integrated thin-film silicon solar cell and lithium ion cell in a simple cell-to-cell integration without any control electronics as a compact power solution for portable electronic devices. To demonstrate this we used triple-junction thin-film silicon solar cell connected directly to a lithium ion battery cell to charge the battery and in turn discharge the battery through the solar cell. Our results show that with appropriate voltage matching the solar cell provides efficient charging for lab-scale lithium ion storage cell. Despite the absence of any control electronics the discharge rate of the Li-ion cell through the non-illuminated solar cell can be much lower than the charging rate when the current voltage (IV) characteristics of the solar cell is matched properly to the charge-discharge characteristics of the battery. This indicates good sustainability of the ultimately simple integrated device. At the maximum power point, solar energy-to-battery charging efficiency of 8.5% which is nearly the conversion efficiency of the solar cell was obtained indicating potential for loss-free operation of the photovoltaic (PV)-battery integration. For the rest of the charging points, an average of 8.0% charging efficiency was obtained.

  4. Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    YAN Chang; LIU Fang-Yang; LAI Yan-Qing; LI Jie; LIU Ye-Xiang

    2011-01-01

    We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique.Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice,leading to a shrinkage of the lattice,and,accordingly,by 2θ shifting to larger values.The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3.Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm.Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.Solar cells based on Cu(In,Ga)Se2 (CIGS) absorbers have achieved conversion efficiencies as high as 20.3%,holding the record for thin film photovoltaics.[1] However,using the rare and expensive elements In and Ga limits the scalability to GWp/yr power production levels.Fortunately,Cu2SixSn1-xS3 (CSTS) is one of the potential earthabundant alternatives to Cu(In,Ga)Se2,and can replace In and Ga with inexpensive and benign elements due to its similar electronic and crystal structure.[2- 5]%We report the preparation of Cu2SixSn1-xS3 thin 61ms for thin 61m solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the CuzSnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 20 shifting to larger values. The blue shift of the Raman peak further con6rms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope anaiyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of

  5. Dyadic Green’s functions of thin films: Applications within plasmonic solar cells

    DEFF Research Database (Denmark)

    Jung, Jesper; Søndergaard, Thomas; Pedersen, Thomas Garm;

    2011-01-01

    Optimization and design of silicon solar cells by exploiting light scattering frommetal nanoparticles to increase the efficiency is addressed in the small particle limit from a fundamental point of view via the dyadic Green’s function formulation. Based on the dyadic Green’s function (Green......-field approximations. The far-field approximations enable efficient, exact, and separate evaluation of light scattering into waves that propagate in the substrate or the superstrate. Based on the near-field approximation we present a semianalytical expression for the total near-field absorption in the substrate....... The theoretical approach is used to analyze realistic configurations for plasmon-assisted silicon solar cells. We show that by embedding metal nanoscatterers in a thin film with a high refractive index (rutile TiO2 with n ≈ 2.5) on top of the silicon, the fraction of scattered light that couples into the solar...

  6. Crystalline silicon for thin film solar cells. Final report; Kristallines Silizium fuer Duennschichtsolarzellen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, H.

    2001-07-01

    Thin film solar cells based on silicon are of great interest for cost-effective conversion of solar energy into electric power. In order to reach this goal, intensive research is still necessary, pointing, e.g., to a further enhancement of the conversion efficiency, an improvement of stability and a reduction of the production time. Aim of the project work was the achievement of knowledge on microcrystalline silicon and its application in thin film solar cells by means of a broad research and development program. Material research focused on growth processes of the microcrystalline material, the incorporation and stability of hydrogen, the electronic transport and defects. In particular the transition from amorphous to microcrystalline material which is obtained for the present deposition methods by minor variations of the deposition parameters as well as the enhancement of the deposition rate were intensively studies. Another focus of research aimed toward the development and improvement of zinc oxide films which are of central importance for this type of solar cells for the application as transparent contacts. A comprehensive understanding was achieved. The films were incorporated in thin film solar cells and with conversion efficiencies >8% for single cells (at relatively high deposition rate) and 10% (stable) for tandem cells with amorphous silicon, top values were achieved by international standards. The project achievements serve as a base for a further development of this type of solar cell and for the transfer of this technology to industry. (orig.) [German] Duennschichtsolarzellen auf der Basis von Silizium sind von grossem Interesse fuer eine kostenguenstige Umwandlung von Sonnenenergie in elektrischen Strom. Um dieses Ziel zu erreichen, ist jedoch noch intensive Forschung, u.a. zur weiteren Steigerung des Wirkungsgrades, zur Verbesserung der Stabilitaet und zur Verkuerzung des Produktionsprozesses erforderlich. Ziel der Projektarbeiten war, durch ein

  7. Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

    International Nuclear Information System (INIS)

    In order to study the effect of CdCl2 annealing treatment on thin CdS films and CdTe/CdS thin film solar cells, a comparative study was carried out on three types of CdTe/CdS solar cells, which had different kinds of CdS window layer: as-deposited CdS, air-annealed CdS without CdCl2 pre-coating, and CdCl2-annealed CdS. When annealed in air the CdS film was partially oxidated to CdO and CdSO4. These oxides increased the series resistance of the CdTe solar cell and led to the lowest fill factor. The presence of CdCl2 on the surface of a CdS thin film during heat treatment in air protected it from oxidation and promoted the recrystallization of the CdS film, resulting in large and closely packed grains with a grain size of ∝ 50 -150 nm. CdTe/CdS solar cell with such a kind of CdS window layer showed the largest short circuit current and highest conversion efficiency of 12.4%. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Concepts for thin-film GaAs concentrator cells. [for solar photovoltaic space power systems

    Science.gov (United States)

    Spitzer, M. B.; Gale, R. P.; Mcclelland, R.; King, B.; Dingle, J.

    1989-01-01

    The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

  9. Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Haug, F.-J.; Niquille, X.; Terrazzoni, V.; Ballif, C.

    2009-02-01

    The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a-Si:H thickness reduction diminishes the light induced degradation, and micromorph tandem cells with 11.2% initial and 9.8% stabilized efficiencies (1000 h, 50 °C, and 100 mW/cm2) are made on plastic substrates with Tg<180 °C.

  10. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    Science.gov (United States)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  11. Electronic structure of electrodeposited thin film CdTe solar cells

    Science.gov (United States)

    Ullal, H. S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7 to 2.0 microns and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11 percent. Further refinements in device design and cell processing should result in 12 to 13 percent efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  12. Electronic structure of electrodeposited thin film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7-2.0 ..mu..m and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11%. Further refinements in device design and cell processing should result in 12-13% efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  13. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  14. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    Science.gov (United States)

    de Jong, M. M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic substrates can be a solution. In this thesis, we investigate the possibilities of depositing thin film solar cells directly onto cheap plastic substrates. Micro-textured glass and sheets, which have a wide range of applications, such as in green house, lighting etc, are applied in these solar cells for light trapping. Thin silicon films can be produced by decomposing silane gas, using a plasma process. In these types of processes, the temperature of the growing surface has a large influence on the quality of the grown films. Because plastic substrates limit the maximum tolerable substrate temperature, new methods have to be developed to produce device-grade silicon layers. At low temperature, polysilanes can form in the plasma, eventually forming dust particles, which can deteriorate device performance. By studying the spatially resolved optical emission from the plasma between the electrodes, we can identify whether we have a dusty plasma. Furthermore, we found an explanation for the temperature dependence of dust formation; Monitoring the formation of polysilanes as a function of temperature using a mass-spectrometer, we observed that the polymerization rate is indeed influenced by the substrate temperature. For solar cell substrate material, our choice was polycarbonate (PC), because of its low cost, its excellent transparency and its relatively high glass transition temperature of 130-140°C. At 130°C we searched for deposition recipes for device quality silicon, using a very high frequency plasma enhanced chemical deposition process. By diluting the feedstock silane with hydrogen gas, the silicon quality can be improved for amorphous silicon (a-Si), until we reach the

  15. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  16. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.;

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  17. Geometrical shape design of nanophotonic surfaces for thin film solar cells.

    Science.gov (United States)

    Nam, W I; Yoo, Y J; Song, Y M

    2016-07-11

    We present the effect of geometrical parameters, particularly shape, on optical absorption enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide (GaAs) using a rigorous coupled wave analysis (RCWA) method. It is discovered that the "sweet spot" that maximizes efficiency of solar cells exists for the design of nanophotonic surfaces. For the case of ultrathin, rod array is practical due to the effective optical resonances resulted from the optimum geometry whereas parabola array is viable for relatively thicker cells owing to the effective graded index profile. A specific value of thickness, which is the median value of other two devices tailored by rod and paraboloid, is optimized by truncated shape structure. It is therefore worth scanning the optimum shape of nanostructures in a given thickness in order to achieve high performance. PMID:27410892

  18. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    International Nuclear Information System (INIS)

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency

  19. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Boccard Mathieu

    2014-07-01

    Full Text Available When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration or superstrate (in p-i-n configuration. We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  20. The role of front and back electrodes in parasitic absorption in thin-film solar cells

    Science.gov (United States)

    Boccard, Mathieu; Cuony, Peter; Hänni, Simon; Stuckelberger, Michael; Haug, Franz-Josef; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe

    2014-07-01

    When it comes to parasitic absorption in thin-film silicon solar cells, most studies focus on one electrode only, most of the time the substrate (in n-i-p configuration) or superstrate (in p-i-n configuration). We investigate here simultaneously the influence of the absorption in both front and back electrodes on the current density of tandem micromorph solar cells in p-i-n configuration. We compare four possible combinations of front and back electrodes with two different doping levels, but identical sheet resistance and identical light-scattering properties. In the infrared part of the spectrum, parasitic absorption in the front or back electrode is shown to have a similar effect on the current generation in the cell, which is confirmed by modeling. By combining highly transparent front and back ZnO electrodes and high-quality silicon layers, a micromorph device with a stabilized efficiency of 11.75% is obtained.

  1. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao [School of Electronic Science and Engineering, Southeast University, Nanjing 210096, Jiangsu Province (China)

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  2. Light trapping regimes in thin-film silicon solar cells with a photonic pattern.

    Science.gov (United States)

    Zanotto, Simone; Liscidini, Marco; Andreani, Lucio Claudio

    2010-03-01

    We present a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub-micron scale realized in the silicon layer and filled with silicon dioxide right below a properly designed antireflection (AR) coating. The study and optimization of the structure as a function of all the photonic lattice parameters, together with the calculation of the absorption in a single layer, allows to identify the different roles of the periodic pattern in determining an increase of the absorbance. From one side, the photonic crystal and the AR coating act as impedance matching layers, thus minimizing reflection of incident light over a particularly wide range of frequencies. Moreover a strong absorption enhancement is observed when the incident light is coupled into the quasi guided modes of the photonic slab. We found a substantial increase of the short-circuit current when the parameters are properly optimized, demonstrating the advantage of a wavelength-scale, photonic crystal based approach for patterning of thin-film silicon solar cells. PMID:20389438

  3. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb2Te3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb2Te3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  4. Recent technical advances in thin-film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Omura, K.; Hanahusa, A.; Arita, T.; Higuchi, H.; Aramoto, T.; Nishio, T.; Sibutani, S.; Kumazawa, S.; Murozono, M. [Matsushita Battery Industrial Co., Ltd., Osaka (Japan). PV Research and Development Center; Yabuuchi, Y. [Matsushita Technoresearch Inc., Osaka (Japan); Takakura, H. [Toyama Prefectural University, Toyama (Japan)

    1996-05-01

    CeS/CdTe solar cells have attracted attention recently for their potential as low-cost, high-efficiency solar cells of the future. It is because the CdTe layer (used for photoelectric conversion) has a bandgap energy of 1.51 eV, which corresponds well to sunlight spectra, and the direct transition type energy band structure enables formation of thinner films. We have already industrialized CdS/CdTe solar cells in mass production stage using a printing-sintering process, as large-area modules for electric power generation (Higuchi et al., 1993, Omura et al., 1991), and as cells for indoor applications (primarily in calculators, Suyama et al., 1986). However, this solar cell has a conversion efficiency of approximately 6%. Recently, there has been considerable research into thin-film CdS/CdTe solar cells which have a thinner CdS film formed by CVD or CBD (Britt et al., 1993) process, and thus are photosensitive to light with wavelengths of 500 nm or less. At present stage of our art, in solar cells formed by the CSS with a CdTe film on CVD CdS, a conversion efficiency of 15.05% has been obtained in cells with an area of 1 cm{sup 2}(verified at JQA). (author)

  5. Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels

    CERN Document Server

    Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

    2013-01-01

    This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

  6. Enhanced photon management in silicon thin film solar cells with different front and back interface texture.

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-01-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm(2) resulting in a total short circuit current of 23.65 mA/cm(2) and an energy conversion efficiency of 8.35%. PMID:27481226

  7. A non-resonant dielectric metamaterial for enhancement of thin-film solar cells

    CERN Document Server

    Omelyanovich, Mikhail; Simovski, Constantin

    2014-01-01

    Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  8. Temperature dependent electrical characterization of thin film Cu2ZnSnSe4 solar cells

    Science.gov (United States)

    Kask, E.; Krustok, J.; Giraldo, S.; Neuschitzer, M.; López-Marino, S.; Saucedo, E.

    2016-03-01

    Impedance spectroscopy (IS) and current-voltage characteristics measurements were applied to study properties of a Cu2ZnSnSe4 (CZTSe) thin film solar cell. IS measurements were done in the frequency range 20 Hz to 10 MHz. The measurement temperature was varied from 10 K to 325 K with a step ▵T  =  5 K. Temperature dependence of V oc revealed an activation energy of 962 meV, which is in the vicinity of the band gap energy of CZTSe and hence the dominating recombination mechanism in this solar cell is bulk recombination. Different temperature ranges, where electrical properties change, were found. Interface states at grain boundaries with different properties were revealed to play an important role in impedance measurements. These states can be described by introducing a constant phase element in the equivalent circuit.

  9. Hydrophobic perfluoropolymer thin-film encapsulation for enhanced stability of inverted polymer solar cells

    International Nuclear Information System (INIS)

    We report hydrophobic perfluoropolymer thin-film encapsulation for enhancing the air ambient stability of inverted polymer solar cells (PSCs). Using a perfluoropolymer, poly(perfluorodecylmethacrylate) (PFDMA), as an encapsulation material, an orthogonal process that enables a solution-processing of encapsulation polymers to be coated directly on the inverted PSCs without damaging the underlying organic components is possible. Particularly, with PFDMA encapsulation, the air ambient stability was significantly enhanced, showing only an efficiency reduction of 23.3% after 456 hours of air exposure. The enhanced device stability can be attributed to the hydrophobic property of the PFDMA surface, which suppresses the transmission of air ambient gas molecules into the solar cells. Thus, the PFDMA coating can be beneficial in achieving high-stability organic electronics by using an easy-to-use route.

  10. Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Escarre, J.; Villar, F.; Asensi, J.M.; Bertomeu, J.; Andreu, J. [CeRMAE - Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2006-06-15

    Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the {mu}c-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the {mu}c-Si:H layer, mainly at long wavelengths, to be quantified. (author)

  11. Enhanced photon management in silicon thin film solar cells with different front and back interface texture

    Science.gov (United States)

    Tamang, Asman; Hongsingthong, Aswin; Jovanov, Vladislav; Sichanugrist, Porponth; Khan, Bakhtiar A.; Dewan, Rahul; Konagai, Makoto; Knipp, Dietmar

    2016-08-01

    Light trapping and photon management of silicon thin film solar cells can be improved by a separate optimization of the front and back contact textures. A separate optimization of the front and back contact textures is investigated by optical simulations taking realistic device geometries into consideration. The optical simulations are confirmed by experimentally realized 1 μm thick microcrystalline silicon solar cells. The different front and back contact textures lead to an enhancement of the short circuit current by 1.2 mA/cm2 resulting in a total short circuit current of 23.65 mA/cm2 and an energy conversion efficiency of 8.35%.

  12. Post-growth process for flexible CdS/CdTe thin film solar cells with high specific power.

    Science.gov (United States)

    Cho, Eunwoo; Kang, Yoonmook; Kim, Donghwan; Kim, Jihyun

    2016-05-16

    We demonstrated a flexible CdS/CdTe thin film solar cell with high specific power of approximately 254 W/kg. A flexible and ultra-light weight CdS/CdTe cell treated with pre-NP etch process exhibited high conversion efficiency of 13.56% in superstrate configuration. Morphological, structural and optical changes of CdS/CdTe thin films were characterized when pre-NP etch step was incorporated to the conventional post-deposition process. Improvement of photovoltaic parameters can be attributed to the removal of the oxide and the formation of Te-rich layer, which benefit the activation process. Pre-NP etched cell maintained their flexibility and performance under the repeated tensile strain of 0.13%. Our method can pave a way for manufacturing flexible CdS/CdTe thin film solar cells with high specific power for mobile and aerospace applications. PMID:27409952

  13. Time Domain Characterization of Light Trapping States in Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Pfeiffer W.

    2013-03-01

    Full Text Available Spectral interferometry of the backscattered radiation reveals coherence lifetimes of about 150 fs for nanolocalized electromagnetic modes in textured layered nanostructures as they are commonly used in thin film photovoltaics to achieve high cell efficiencies.

  14. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    Science.gov (United States)

    Buehlmann, P.; Bailat, J.; Dominé, D.; Billet, A.; Meillaud, F.; Feltrin, A.; Ballif, C.

    2007-10-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA/cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.

  15. Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture

    OpenAIRE

    Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

    2014-01-01

    Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structur...

  16. Enhancing light trapping properties of thin film solar cells by plasmonic effect of silver nanoparticles.

    Science.gov (United States)

    Jung, Junhee; Ha, Kyungyeon; Cho, Jaehyun; Ahn, Shihyun; Park, Hyeongsik; Hussain, Shahzada Qamar; Choi, Mansoo; Yi, Junsin

    2013-12-01

    The preparation of thin film silicon solar cells containing Ag nanoparticles is reported in this article. Ag nanoparticles were deposited on fluorine doped tin oxide coated glass substrates by the evaporation and condensation method. a-Si:H solar cells were deposited on these substrates by cluster type plasma enhanced chemical vapor deposition. We discuss the double textured surface effect with respect to both the surface morphology of the substrate and the plasmonic effect of the Ag nanoparticles. Ag nanoparticles of various sizes from 10 to 100 nm were deposited. The haze values of the Ag embedded samples increased with increasing particle size whereas the optical transmittance decreased at the same conditions. The solar cell with the 30 nm size Ag nanoparticles showed a short circuit current density of 12.97 mA/cm2, which is 0.53 mA/cm2 higher than that of the reference solar cell without Ag nanoparticles, and the highest quantum efficiency for wavelengths from 550 to 800 nm. When 30 nm size nanoparticles were employed, the conversion efficiency of the solar cell was increased from 6.195% to 6.696%. This study reports the application of the scattering effect of Ag nanoparticles for the improvement of the conversion efficiency of amorphous silicon solar cells. PMID:24266153

  17. Enhancement of light trapping in thin-film solar cells through Ag

    Institute of Scientific and Technical Information of China (English)

    Yiming Bai; Han Zhang; Jun Wang; Nuofu Chen; Jianxi Yao; Tianmao Huang; Xingwang Zhang; Zhigang Yin; Zhen Fu

    2011-01-01

    Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles. Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated. The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively. When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles. Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.%@@ Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.

  18. Light trapping in thin film solar cells using photonic engineering device concepts

    Science.gov (United States)

    Mutitu, James Gichuhi

    In this era of uncertainty concerning future energy solutions, strong reservations have arisen over the continued use and pursuit of fossil fuels and other conventional sources of energy. Moreover, there is currently a strong and global push for the implementation of stringent measures, in order to reduce the amount of green house gases emitted by every nation. As a consequence, there has emerged a sudden and frantic rush for new renewable energy solutions. In this world of renewable energy technologies is where we find photovoltaic (PV) technology today. However, as is, there are still many issues that need to be addressed before solar energy technologies become economically viable and available to all people, in every part of the world. This renewed interest in the development of solar electricity, has led to the advancement of new avenues that address the issues of cost and efficiency associated with PV. To this end, one of the prominent approaches being explored is thin film solar cell (TFSC) technology, which offers prospects of lower material costs and enables larger units of manufacture than conventional wafer based technology. However, TFSC technologies suffer from one major problem; they have lower efficiencies than conventional wafer based solar cell technologies. This lesser efficiency is based on a number of reasons, one of which is that with less material, there is less volume for the absorption of incident photons. This shortcoming leads to the need for optical light trapping; which is concerned with admitting the maximum amount of light into the solar cell and keeping the light within the structure for as long as possible. In this thesis, I present the fundamental scientific ideas, practice and methodology behind the application of photonic engineering device concepts to increase the light trapping capacity of thin film solar cells. In the introductory chapters, I develop the basic ideas behind light trapping in a sequential manner, where the effects

  19. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  20. Nanoimprint lithography for high-efficiency thin-film silicon solar cells.

    Science.gov (United States)

    Battaglia, Corsin; Escarré, Jordi; Söderström, Karin; Erni, Lukas; Ding, Laura; Bugnon, Grégory; Billet, Adrian; Boccard, Mathieu; Barraud, Loris; De Wolf, Stefaan; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

    2011-02-01

    We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells. Excellent light incoupling results in a remarkable summed short-circuit current density of 25.9 mA/cm(2) for amorphous top cell and microcrystalline bottom cell thicknesses of only 250 and 1100 nm, respectively. As efforts to maximize light harvesting continue, our study validates nanoimprinting as a versatile tool to investigate nanophotonic effects of a large variety of nanostructures directly on device performance. PMID:21302973

  1. Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.tw; Wang, B.L.; Yen, W.T.; Shen, C.H.

    2011-06-01

    In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 x 10{sup -4} {Omega} cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 x 10{sup -3} {Omega} cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

  2. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  3. Controllable Electrochemical Synthesis of Reduced Graphene Oxide Thin-Film Constructed as Efficient Photoanode in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Soon Weng Chong

    2016-01-01

    Full Text Available A controllable electrochemical synthesis to convert reduced graphene oxide (rGO from graphite flakes was introduced and investigated in detail. Electrochemical reduction was used to prepare rGO because of its cost effectiveness, environmental friendliness, and ability to produce rGO thin films in industrial scale. This study aimed to determine the optimum applied potential for the electrochemical reduction. An applied voltage of 15 V successfully formed a uniformly coated rGO thin film, which significantly promoted effective electron transfer within dye-sensitized solar cells (DSSCs. Thus, DSSC performance improved. However, rGO thin films formed in voltages below or exceeding 15 V resulted in poor DSSC performance. This behavior was due to poor electron transfer within the rGO thin films caused by poor uniformity. These results revealed that DSSC constructed using 15 V rGO thin film exhibited high efficiency (η = 1.5211% attributed to its higher surface uniformity than other samples. The addition of natural lemon juice (pH ~ 2.3 to the electrolyte accelerated the deposition and strengthened the adhesion of rGO thin film onto fluorine-doped tin oxide (FTO glasses.

  4. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    International Nuclear Information System (INIS)

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (106 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (103 Ω cm) against a 20% cut in optical transmission

  5. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  6. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem cells

  7. Determination of optical and mechanical properties of Nb2O5 thin films for solar cells application

    International Nuclear Information System (INIS)

    Highlights: • Niobium pentoxide films were prepared by microwave assisted magnetron sputtering. • Optical and mechanical properties of Nb2O5 thin films were investigated. • The surface of thin films was homogenous, crack free and exhibited low RMS roughness. • Prepared Nb2O5 coatings were well transparent from ca., 350 nm. • Hardness of deposited coatings was ca., 7 GPa. - Abstract: In this paper investigation results of niobium pentoxide thin films deposited by microwave assisted reactive magnetron sputtering process were described. Surface of prepared coatings was examined with the aid of atomic force microscope (AFM) operating in the contact-mode and in ultra high vacuum conditions. The surface of thin films was homogenous, crack free and exhibit low root mean square (RMS) roughness of about 0.34 nm. X-ray photoelectron spectroscopy (XPS) studies were performed to determine the chemical states of the niobium at the surface of thin films. Contact angle and surface free energy were additionally investigated to examine the surface properties of the deposited coatings. Optical properties of the Nb2O5 thin films showed, that prepared coatings were well transparent from 350 nm to longer wavelength range. Based on transmission and reflection measurements the values of refractive index and extinction coefficient were determined. The antireflective coating based on Nb2O5 thin films for solar cells application was proposed. The hardness and Young's modulus measurements were performed by the nanoindentation technique. These investigations revealed that the hardness of the deposited coatings was ca., 7 GPa. Also scratch tests were applied, which have shown that the Nb2O5 thin films were scratch resistant

  8. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Science.gov (United States)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  9. Reduced adverse effects on Si thin film solar cells caused by growth chamber air exposure

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Fan; Zhang, Lin; Zheng, Yi; Schimitt, Francimar; Tso, Alan; Li, Lipan; Tsuei, Lun; Yuan, Zheng; Shieh, Brian [Thin Film Solar Products Division, Applied Materials, Santa Clara, CA 95054 (United States)

    2010-06-15

    The cost of photovoltaic (PV) energy is reduced by increasing solar cell power conversion efficiency and decreasing manufacture cost. An effective way of lowering the cost of Si thin film solar cells (TFSC) is to grow panels on large-area substrates. In this paper we study the effect of air residual to Si TFSC grown on 5.7 m{sup 2} glass in plasma-enhanced chemical vapor deposition (PECVD) chambers. Structural and chemical analysis show that oxygen incorporated into the Si films behaved as impurity dopant in the hydrogenated microcrystalline Si ({mu}c-Si) layers and reduced the efficiency of amorphous Si (a-Si)/{mu}c-Si tandem junction solar cells when the film had oxygen concentration >2 x 10{sup 19} atoms/cm{sup 3}. Higher oxygen content further suppressed the {mu}c-Si crystallization. We found that hydrogen plasma treatment of process chamber before Si film deposition effectively reduced the adverse effects of air exposure and improved both film quality and solar cell performance. The hydrogen-treated chamber produced contamination-free, solar cells with consistent, initial efficiency >10%. (author)

  10. Electrical Properties of Al, Ag, Cu, Ti and SS Thin Film for Electrode of Solar Cell

    International Nuclear Information System (INIS)

    The Al, Ag, Cu, Ti and SS materials were deposited on the surface of glass substrate using plasma DC sputtering technique. The deposition process was done with the following plasma parameters : deposition time, gas pressure and substrate temperature with the aim to obtain a good conductance of thin films. Variation of substrate deposition time was 1 - 15 minutes, gas pressure was 5x10-2 - 7x10-2 torr and of temperature was 100 - 300 oC. The resistance measurement has been done by four points probes and the conductivity was calculated using mathematic formulation. It was obtained that the minimum resistance in the order of R = 0.07 Ω, was found at Ag materials and this was obtained at the following plasma parameters : deposition time 15 minutes, gas pressure 6x10-2 torr and temperature 300 oC, while, the resistance of : Cu, Al, Ti and SS materials were R = 0.13 Ω, R = 450 Ω, R = 633 Ω, R = 911 Ω respectively, It could be concluded that the Ag thin film has a minimum resistance, high conductivity compared to the other materials Al, Cu, Ti and SS. Ag is therefore the suitable material for applying as electrode of solar cell. (author)

  11. 薄膜太阳电池研究综述%Review of Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    蔺旭鹏; 强颖怀; 肖裕鹏; 徐明磊

    2012-01-01

    The thin film solar cell is one of the most promising new energy sources, which provides a new and feasible way to relieve energy crisis and protect human living environment. The latest progress of several materials for fabricating thin film solar cells are reviewed, which contains silicon-based thin films (α-silicon, poly-silicon), multi-compound (CdTe, CIS, CIGS, CZTS) , organic thin film and dye-sensitized solar cells and so on. The advantages and shortcomings of the thin films such as the cost and conversion efficiency are analyzed, respectively. For lowering the cost and improving efficiency more effectively, continuous innovation of new technology and new structure should be the development tendency of the thin film solar cells.%薄膜太阳电池是最具发展潜力的新型能源之一,对缓解能源危机、保护人类生存环境提供了一种新的切实可行的方法.综述了目前国际上研究较多的几种薄膜太阳电池的最新进展,包括硅基薄膜(非晶硅、多晶硅)、多元化合物类(碲化镉、铜铟硒、铜铟镓硒、铜锌锡硫等)、有机薄膜太阳电池以及染料敏化太阳电池等.分析并总结了其在成本、转换效率等方面的优劣.为更有效地降低成本及提高电池效率,新技术、新结构的不断创新应该是未来薄膜太阳电池的发展趋势.

  12. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  13. Basella alba rubra spinach pigment-sensitized TiO2 thin film-based solar cells

    Science.gov (United States)

    Gokilamani, N.; Muthukumarasamy, N.; Thambidurai, M.; Ranjitha, A.; Velauthapillai, Dhayalan

    2015-03-01

    Nanocrystalline TiO2 thin films have been prepared by sol-gel dip coating method. The X-ray diffraction results showed that TiO2 thin films annealed at 400, 450 and 500 °C are of anatase phase and the peak corresponding to the (101) plane is present in all the samples. The grain size of TiO2 thin films was found to increase with increasing annealing temperature. The grain size is found to be 20, 25 and 33 nm for the films annealed at 400, 450 and 500 °C. The structure of the TiO2 nanocrystalline thin films have been examined by high-resolution transmission electron microscope, Raman spectroscopy and FTIR spectroscopy. TiO2 thin films were sensitized by natural dyes extracted from basella alba rubra spinach. It was found that the absorption peak of basella alba rubra extract is at about 665 nm. The dye-sensitized TiO2-based solar cell sensitized using basella alba rubra exhibited a J sc of 4.35 mA cm-2, V oc of 0.48 V, FF of 0.35 and efficiency of 0.70 %. Natural dyes as sensitizers for dye-sensitized solar cells are promising because of their environmental friendliness, low-cost production and fully biodegradable.

  14. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  15. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  16. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  17. Natural evolution inspired design of light trapping structure in thin film organic solar cells

    Science.gov (United States)

    Wang, Chen; Yu, Shuangcheng; Chen, Wei; Sun, Cheng

    2013-09-01

    Light trapping has been developed to effectively enhance the efficiency of the thin film solar cell by extending the pathlength for light interacting with the active materials. Searching for optimal light trapping design requires a delicate balance among all the competing physical processes, including light refraction, reflection, and absorption. The existing design methods mainly depend on engineers' intuition to predefine the topology of the light-trapping structure. However, these methods are not capable of handling the topological variation in reaching the optimal design. In this work, a systematic approach based on Genetic Algorithm is introduced to design the scattering pattern for effective light trapping. Inspired by natural evolution, this method can gradually improve the performance of light trapping structure through iterative procedures, producing the most favorable structure with minimized reflection and substantial enhancement in light absorption. Both slot waveguide based solar cell and a more realistic organic solar with a scattering layer consisting of nano-scale patterned front layer is optimized to maximize absorption by strongly coupling incident sun light into the localized photonic modes supported by the multilayer system. Rigorous coupled wave analysis (RCWA) is implemented to evaluate the absorbance. The optimized slot waveguide cell achieves a broadband absorption efficiency of 48.1% and more than 3-fold increase over the Yablonovitch limit and the optimized realistic organic cell exhibits nearly 50% average absorbance over the solar spectrum with short circuit current density five times larger than the control case using planar ITO layer.

  18. Influence of Ligands on the Formation of Kesterite Thin Films for Solar Cells: A Comparative Study.

    Science.gov (United States)

    Huang, Tang Jiao; Yin, Xuesong; Tang, Chunhua; Qi, Guojun; Gong, Hao

    2016-05-10

    The preparation of solar-cell-grade Cu2 ZnSnS4 (CZTS) thin films from ligand-capped small-grained CZTS particles remains hindered by problems of phase segregation, composition non-uniformity, and in particular carbon-layer formation. Herein, through a systematic comparative study of annealed films of CZTS nanocrystals prepared using conventional oleylamine and those prepared using formamide, these problems are found to be mainly attributable to the influence of the ligands, and mechanisms are proposed. Importantly, the origin of the carbon layer in oleylamine-capped CZTS films is revealed to be the reaction between oleylamine and sulfur. This carbon layer has a very poor electrical conductivity, which can be the reason for the limited performance of such films. Fortunately, these problems can almost all be avoided by replacing oleylamine with formamide to form CZTS films. PMID:27059551

  19. Deposition and doping of CdS/CdTe thin film solar cells

    International Nuclear Information System (INIS)

    1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O2-free devices are compared after CdCl2 treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current—voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices. (paper)

  20. Enhanced light absorption in thin-film solar cells with light propagation direction conversion.

    Science.gov (United States)

    Suemune, Ikuo

    2013-05-01

    Enhancement of optical absorption in thin-film solar cells (TF-SCs) has been the long-lasting issue to achieve high efficiencies. Grating couplers have been studied for the conversion of incident light into guided modes propagating along TF-SCs to extend optical path for higher optical absorption. However the wavelength band for the efficient conversion remained relatively narrow and the overall improvement of TF-SC efficiencies has been limited. This paper demonstrates that the grating height design as well as the phase matching condition is important for the enhancement of optical absorption in TF-SCs with the calculation of short-circuit currents as a figure of merit for optimization. The influence of the light absorption coefficients and grating coupling strengths on the light absorption bandwidth is also discussed. PMID:24104442

  1. Organic solar cells based on liquid crystalline and polycrystalline thin films

    Science.gov (United States)

    Yoo, Seunghyup

    This dissertation describes the study of organic thin-film solar cells in pursuit of affordable, renewable, and environmentally-friendly energy sources. Particular emphasis is given to the molecular ordering found in liquid crystalline or polycrystalline films as a way to leverage the efficiencies of these types of cells. Maximum efficiencies estimated based on excitonic character of organic solar cells show power conversion efficiencies larger than 10% are possible in principle. However, their performance is often limited due to small exciton diffusion lengths and poor transport properties which may be attributed to the amorphous nature of most organic semiconductors. Discotic liquid crystal (DLC) copper phthalocyanine was investigated as an easily processible building block for solar cells in which ordered molecular arrangements are enabled by a self-organization in its mesophases. An increase in photocurrent and a reduction in series resistance have been observed in a cell which underwent an annealing process. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements suggest that structural and morphological changes induced after the annealing process are related to these improvements. In an alternative approach, p-type pentacene thin films prepared by physical vapor deposition were incorporated into heterojunction solar cells with C60 as n-type layers. Power conversion efficiencies of 2.7% under broadband illumination (350--900 nm) with a peak external quantum efficiency of 58% have been achieved with the broad spectral coverage across the visible spectrum. Analysis using an exciton diffusion model shows this efficient carrier generation is mainly due to the large exciton diffusion length of pentacene films. Joint XRD and AFM studies reveal that the highly crystalline nature of pentacene films can account for the observed large exciton diffusion length. In addition, the electrical characteristics are studied as a function of light intensity using

  2. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  3. Effective Ag doping by He-Ne laser exposure to improve the electrical and the optical properties of CdTe thin films for heterostructured thin film solar cells

    International Nuclear Information System (INIS)

    The cadmium telluride (CdTe) thin film solar cell is one of the strongest candidates due to the optimum band gap energy (about 1.4 eV) for solar energy absorption, high light absorption capability and lower cost requirements for solar cell production. However, the maximum efficiency of a CdTe thin film solar cell still remains just 16.5% despite its excellent absorption coefficient; i.e., the electrical properties of CdTe thin film, including the resistivity, must be improved to enhance the energy conversion efficiency. Silver (Ag) was doped by using helium-neon (He-Ne) laser (632.8 nm) exposure into sputtering-deposited p-type CdTe thin films. The resistivity of the Ag-doped CdTe thin films was reduced from 2.97 x 104 Ω-cm to the order of 5.16 x 10'-'2 Ω-cm. The carrier concentration of CdTe thin films had increased to 1.6 x 1018 cm-3 after a 15-minute exposure to the He-Ne laser. The average absorbance value of CdTe thin films was improved from 1.81 to 3.01 by the doping of Ag due to impurity-scattering. These improved properties should contribute to the efficiency of the photovoltaic effect of the photogenerated charged carriers. The methodology in this study is very simple and effective to dope a multilayered thin film solar cell with a relatively short process time, no wet-process, and selective treatment.

  4. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  5. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    OpenAIRE

    Cong Chen; Yu Cheng; Qilin Dai; Hongwei Song

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp lay...

  6. Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Badgujar, Amol C.; Dhage, Sanjay R., E-mail: dhage@arci.res.in; Joshi, Shrikant V.

    2015-08-31

    Copper indium gallium selenide (CIGS) has emerged as a promising candidate for thin film solar cells, with efficiencies approaching those of silicon-based solar cells. To achieve optimum performance in CIGS solar cells, uniform, conductive, stress-free, well-adherent, reflective, crystalline molybdenum (Mo) thin films with preferred orientation (110) are desirable as a back contact on large area glass substrates. The present study focuses on cylindrical rotating DC magnetron sputtered bilayer Mo thin films on 300 mm × 300 mm soda lime glass (SLG) substrates. Key sputtering variables, namely power and Ar gas flow rates, were optimized to achieve best structural, electrical and optical properties. The Mo films were comprehensively characterized and found to possess high degree of thickness uniformity over large area. Best crystallinity, reflectance and sheet resistance was obtained at high sputtering powers and low argon gas flow rates, while mechanical properties like adhesion and residual stress were found to be best at low sputtering power and high argon gas flow rate, thereby indicating a need to arrive at a suitable trade-off during processing. - Highlights: • Sputtering of bilayer molybdenum thin films on soda lime glass • Large area deposition using rotating cylindrical direct current magnetron • Trade of sputter process parameters power and pressure • High uniformity of thickness and best electrical properties obtained • Suitable mechanical and optical properties of molybdenum are achieved for CIGS application.

  7. Characteristics of in-substituted CZTS thin film and bifacial solar cell.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Jiang, Jinchun; Yan, Yanfa; Yang, Pingxiong

    2014-12-10

    Implementing bifacial photovoltaic devices based on transparent conducting oxides (TCO) as the front and back contacts is highly appealing to improve the efficiency of kesterite solar cells. The p-type In substituted Cu2ZnSnS4 (CZTIS) thin-film solar cell absorber has been fabricated on ITO glass by sulfurizing coelectroplated Cu-Zn-Sn-S precursors in H2S (5 vol %) atmosphere at 520 °C for 30 min. Experimental proof, including X-ray diffraction, Raman spectroscopy, UV-vis-NIR transmission/reflection spectra, PL spectra, and electron microscopies, is presented for the interfacial reaction between the ITO back contact and CZTS absorber. This aggressive reaction due to thermal processing contributes to substitutional diffusion of In into CZTS, formation of secondary phases and electrically conductive degradation of ITO back contact. The structural, lattice vibrational, optical absorption, and defective properties of the CZTIS alloy absorber layer have been analyzed and discussed. The new dopant In is desirably capable of improving the open circuit voltage deficit of kesterite device. However, the nonohmic back contact in the bifacial device negatively limits the open circuit voltage and fill factor, evidencing by illumination-/temperature-dependent J-V and frequency-dependent capacitance-voltage (C-V-f) measurements. A 3.4% efficient solar cell is demonstrated under simultaneously bifacial illumination from both sides of TCO front and back contacts. PMID:25340540

  8. Synthesis of nanostructured CuInS{sub 2} thin films and their application in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yu; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Luo, Fazhi [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou (China); Liu, Jun [Guangdong University of Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangzhou (China); Zhejiang University, State Key Lab of Silicon Materials, Hangzhou (China)

    2016-03-15

    CuInS{sub 2} (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of ''nanosheet array'' and ''flower-like microsphere'' were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS{sub 2} nanostructure competitive as counter electrode in DSSCs. (orig.)

  9. Surface and interface characterization of thin-film silicon solar cell structures

    Energy Technology Data Exchange (ETDEWEB)

    Gerlach, Dominic

    2013-02-21

    The properties of Si thin films for solar cells, the interaction with different substrates and the influence of dopants are examined with synchrotron based x-ray spectroscopy - primarily X-ray emission spectroscopy (XES) and hard X-ray photoelectron spectroscopy (HAXPES). The films are studied as-deposited (i.e., amorphous, a-Si) and after conversion into polycrystalline (poly-Si) employing solid phase crystallization (SPC). Si L{sub 2,3} XES spectra of thin-film Si samples can be described by a superposition of a-Si and monocrystalline Si-wafer (c-Si) reference spectra. According to a quantification based on that superposition principle, none of the investigated samples are completely crystallized - a measurable a-Si component always remains (5-20 %) regardless of deposition and treatment conditions. Based on additional results from electron back scattering diffraction different models are developed which may explain this finding. According to these models, the remnant a-Si component can be attributed to amorphous/disordered material at the grain boundaries. Using one of these models, the thickness of this grain-surrounding material s could be approximated to be (1.5 {+-} 0.5) nm. Further investigations of the SPC process reveal a faster crystallization for boron-doped samples, and a slower crystallization for phosphorous-doped samples, when compared to the crystallization of undoped a Si:H thin films. The peculiarities of B K XES spectra (and observed changes upon SPC) indicate that boron could act as a nucleation center promoting crystallization. Si L{sub 2,3} XES spectra of a-Si:H and P-doped poly-Si exhibit spectral features above the valence band maximum at 100 eV that could be attributed to a-Si defect states and n{sup +}-dopant states, respectively. The SPC crystallization velocity of Si thin films on ZnO:Al/glass is found to be faster than that on SiNx/glass substrate. Multiple indications for oxidization at the poly-Si/ZnO:Al interface are found based on

  10. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  11. 有机薄膜太阳能电池%Organic Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    郭军; 李博; 胡来归

    2011-01-01

    有机太阳能电池作为一种新兴的有着巨大潜力的光电转换器件,吸引了越来越多的关注.综述了有机薄膜太阳能电池主要的两种器件结构的研究进展,即基于无机异质结发展出来的双异质结型有机太阳能电池和基于扩展双层异质结活性层受限的接触面积而提出的体异质结型太阳能电池;阐述了这两种器件结构的工作原理、影响有机太阳能电池光电转换效率的因素以及两种结构的不足之处,并展望了有机太阳能电池发展的广阔前景.%Organic solar cells, as a kind of new optoelectronic devices with high potential, have attracted much attention. Two common device structures of organic thin film solar cells, double heterojunction and bulk heterojunc tion are reviewed. The double heterojunction structure is developed based on inorganic heterojunction solar cell, while the bulk heterojunction is based on the expanding the contact area of p-n junctions in the double heterojunction struc ture. In addition, the working principles of these two kinds of structures are also introduced, as well as various effects on the optoelectronic conversion efficiency of organic solar cells and the shortcoming of these structures. Broad pros pects of organic solar cell are finally given.

  12. Electro deposition of cuprous oxide for thin film solar cell applications

    Science.gov (United States)

    Shahrestani, Seyed Mohammad

    electro-deposition of Cu2O n-type were identified consistently for the first time. The electro-deposition electrolyte is based 0.01M acetate copper and 0.1 M sodium acetate: it has a pH between 6.3 and 4, a potential of from 0 to -0.25 V vs. Ag / AgCl and a temperature of 60oC. The optimum annealing temperature of the n-type Cu2O layers is between 120-150oC for the annealing time of 30 to 120 minutes. Resistivity of the n-type films varies between 5 x 103 and 5 x 104 at pH 4 to pH 6.4. We have shown for the first time that bubbling nitrogen gas in the electroplating cell improves significantly the spectral response of the electro-deposited n-type thin film. A two steps electro-deposition process was implemented to make the p-n homojunction cuprous oxide. Indium tin oxide (ITO) was used as a transparent conductive oxide substrate. A p-Cu2O was electrodeposited on ITO. After heat treatment a thin film layer of n-Cu 2O was electrodeposited on top of previous layer. The performance of a p-n homojunction photovoltaic solar cell of Cu2O was determined. The short-circuit current and the open circuit voltage were respectively determined to be as 0.35 volts and 235 muA/cm2. The fill factor (FF) and conversion efficiency of light into electricity were respectively measured to be 0.305 and 0.082%.

  13. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells

    Science.gov (United States)

    Shahzad, Naseem

    1991-05-01

    Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522 eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350° C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.

  14. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    Energy Technology Data Exchange (ETDEWEB)

    Pathirane, M., E-mail: minoli.pathirane@uwaterloo.ca; Iheanacho, B.; Lee, C.-H.; Wong, W. S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tamang, A.; Knipp, D. [Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Bremen 28759 (Germany); Lujan, R. [Electronic Materials and Devices Laboratory, Palo Alto Research Center, Palo Alto, California 93003 (United States)

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  15. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells.

    Science.gov (United States)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, JunHo; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-07-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells. PMID:26061271

  16. Preparation of CulnS2 Thin Films on the Glass Substrate by DC Sputtering for Solar Cell Component

    International Nuclear Information System (INIS)

    The CuInS2 alloys were deposited on glass substrate using plasma DC sputtering technique. A CuInS2 alloy target was made from Cu, In, Se powder with impurity of 99.998%. The deposition process was done with the following process parameter variations: deposition time and substrate temperature were the range of 15 to 45 min and 150 to 300 ℃, the gas pressure was kept at 1.4x10-1 Torr. The purpose of the research is to obtain the solar cell component of CuInS2 thin films. The electrical and optical properties measurement has been done by four-point probe and UV-Vis. Crystal structure was analyzed using X-ray diffraction (XRD). The result shows that minimum resistance of CuInS2 thin films is 35.7 kΩ and optical transmittance is 14.7 %. The crystal structure of CuInS2 is oriented at (112) plane and by Touc-plot method was obtained that the band gap energy of thin films is 1.45 eV. It could be concluded that the CuInS2 thin film can be used as a solar cell component. (author)

  17. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sang, Liwen, E-mail: SANG.Liwen@nims.go.jp [International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan); Liao, Meiyong; Koide, Yasuo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sumiya, Masatomo [Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076 (Japan)

    2015-03-14

    In{sub x}Ga{sub 1−x}N, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In{sub 0.08}Ga{sub 0.92}N is achieved with a high hole concentration of more than 10{sup 18 }cm{sup −3}. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

  18. Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

    Directory of Open Access Journals (Sweden)

    Chuan Lung Chuang

    2015-01-01

    Full Text Available Indium tin oxide (ITO thin films were grown on glass substrates by direct current (DC reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were -1.6E+20 cm−3, 2.7E+01 cm2/Vs, 1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

  19. Transition metal oxide window layer in thin film amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Pin-type hydrogenated amorphous silicon solar cells have been fabricated by replacing state of the art silicon based window layer with more transparent transition metal oxide (TMO) materials. Three kinds of TMOs: vanadium oxide, tungsten oxide, and molybdenum oxide (MoOx) were comparatively investigated to reveal the design principles of metal oxide window layers. It was found that MoOx exhibited the best performance due to its higher work function property compared to other materials. In addition, the band alignment between MoOx and amorphous Si controls the series resistance, which was verified through compositional variation of MoOx thin films. The design principles of TMO window layer in amorphous Si solar cells are summarized as follows: A wide optical bandgap larger than 3.0 eV, a high work function larger than 5.2 eV, and a band alignment condition rendering efficient hole collection from amorphous Si absorber layer. - Highlights: • High work function metal oxides can potentially replace the conventional p-a-SiC. • V2Ox, WOx, and MoOx are comparatively investigated in this study. • MoOx is the most relevant material due to its highest work function. • Slightly oxygen deficient MoOx exhibited performance enhancement at x = 2.9

  20. Quantitative determination of element distributions in silicon based thin film solar cells using SNMS.

    Science.gov (United States)

    Gastel, M; Breuer, U; Holzbrecher, H; Becker, J S; Dietze, H J; Kubon, M; Wagner, H

    1995-10-01

    The determination of elemental distributions in thin film solar cells based on amorphous silicon using electron beam SNMS is possible by quantifying the measured ion intensities. The relative sensitivity factors (RSFs) for all elements measured have to be known. The RSFs have been determined experimentally using implantation and bulk standards with known concentrations of the interesting elements. The measured RSFs have been compared with calculated RSFs. The model used for the calculation of the RSFs takes into account the probability for electron impact ionization and the dwell time of the neutrals inside the postionization region. The comparison between measured and calculated RSF shows, that this model is capable to explain the RSFs for most elements. Differences between calculated and measured values can be explained by the formation of hydride and fluoride molecules (in case of H and F) and influences of the angular distribution of the sputtered neutrals in case of Al. The experimentally determined RSFs have been used for a quantification of depth profiles of the i-, buffer-, p- and front contact layers of a-Si solar cells. PMID:15048522

  1. Advances in CuInSe sub 2 and CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shafarmann, W.N.; Birkmire, R.W.; Farding, D.A.; McCandless, B.E.; Mondal, A.; Phillips, J.E.; Varrin, R.D. Jr. (Delaware Univ., Newark (USA). Inst. of Energy Conversion)

    1991-05-01

    Research on CuInSe{sub 2} and CdTe thin film solar cells is discussed. CuInSe{sub 2} was deposited by selenization of Cu/In layers and was used to make a 10% efficient CuInSe{sub 2}/(CdZn)S cell. Characterization of the reaction mechanisms is described. The open-circuit voltage V{sub oc} of CuInSe{sub 2}/(CdZn)S cells is dominated by recombination in the space charge region, so increassing the band gap or decreasing the width of this region should increase V{sub oc}. Increasing the band gap with a thin Cu(InGa)Se{sub 2} layer at the CuInSe{sub 2} surface has demonstrated increased V{sub oc} with collection out to the CuInSe{sub 2} band gap. A post-deposition treatment and contacting process for evaporated CdS/CdTe cells was developed and high efficiency cells were made. Several steps in the process, including a CdCl{sub 2} coating, a 400deg C heat treatment, and a contact containing copper are critical. ZnTe films were deposited from an aqueous solution as a contact to CdTe. (orig.).

  2. CdTe thin film solar cells with reduced CdS film thickness

    International Nuclear Information System (INIS)

    A study was performed to reduce the CdS film thickness in CdTe thin film solar cells to minimize losses in quantum efficiency. Using close space sublimation deposition for CdS and CdTe a maximum efficiency of ∼ 9.5% was obtained with the standard CdS film thickness of ∼ 160 nm. Reduction of the film CdS thickness to less than 100 nm leads to poor cell performance with ∼ 5% efficiency, mainly due to a lower open circuit voltage. An alternative approach has been tested to reduce the CdS film thickness (∼ 80 nm) by depositing a CdS double layer. The first CdS layer was deposited at high substrate temperature in the range of 520-540 deg. C and the second CdS layer was deposited at low substrate temperature of ∼ 250 deg. C. The cell prepared using a CdS double layer show better performance with cell efficiency over 10%. Quantum efficiency measurement confirmed that the improvement in the device performance is due to the reduction in CdS film thickness. The effect of double layer structure on cell performance is also observed with chemical bath deposited CdS using fluorine doped SnO2 as substrate.

  3. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  4. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment.

    Science.gov (United States)

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-12-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light. PMID:27356558

  5. Topics on thin film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tyan Yuansheng

    1988-01-15

    Efficient thin film CdS/CdTe solar cells can be prepared by the close-spaced sublimation technique onto soda-lime glass coated with either indium tin oxide or tin oxide. Oxygen is needed to enchance the p characteristics of CdTe; a high substrate temperature is needed to reduce the interfacial defects at the CdS/CdTe junction. Cells with gold electrodes are not stable owing to Au-CdTe interaction. Alternative electrodes to CdTe can be prepared by using a HNO/sub 3/-H/sub 3/PO/sub 4/ surface treatment. The cells showed 30-40% efficiency degradation when aged over 2 years at 100/sup 0/C under continuous air mass 1 illumination. The degradation appears to result from a decrease in the carrier concentration with aging. The aging process is not sensitive to ambience but is sensitive to the presence of light or voltage bias. It is believed to be related to the dependence of the effective carrier concentration on the cooling rate subsequent to the CdTe deposition. Defect interaction may be a possible cause of the aging behavior but photoluminescence and deep-level studies have not established the mechanism involved. The evidence suggests that trace impurities can have significant effects on the behavior of the cells and could be responsible for the aging behavior.

  6. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  7. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    International Nuclear Information System (INIS)

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In2O3:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10−4 Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells

  8. Directly patterned TiO2 nanostructures for efficient light harvesting in thin film solar cells

    International Nuclear Information System (INIS)

    A novel, scalable, and low-cost strategy for fabricating sub-wavelength scale hierarchical nanostructures by direct patterning of TiO2 nanoparticles on glass substrates is reported. Two nanostructural designs of light-trapping back-surface reflectors (BSR) have been fabricated for increasing the photon-harvesting properties of thin-film solar cells: a quasi-periodic nano-crater design and a random nano-bump design. The efficient light-scattering properties of the nano-crater design over a broad wavelength range are demonstrated by the measured haze factor being larger than 40% at wavelengths (∼700 nm) near the band edge of amorphous silicon (a-Si:H). The a-Si:H-based n-i-p solar cell fabricated with an only ∼200 nm thick absorber layer on the nano-crater BSR shows a short-circuit current density (J sc) of ∼16.1 mA cm−2 representing a 28% enhancement compared to the cell deposited on a non-textured flat substrate. Measurements of the external quantum efficiency of the cell fabricated on the quasi-periodic nano-crater surface at long wavelengths, λ  >  700 nm, demonstrate an increase of a factor of 5 relative to that of a flat reference solar cell. The theoretical modeling results of optical absorption corroborate well with the experimental findings and are used to identify the volumes of strong optical absorption in the a-Si:H active layer of the textured BSR devices. (paper)

  9. Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

    OpenAIRE

    Kuendig, J.; Goetz, M.; Shah, Arvind; Gerlach, L.; Fernandez, E

    2008-01-01

    The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-temperature annealing behaviour can be observed (at temperatures around 100 to 160°C) for microcrystalline silicon solar cells. To further explore this effect, a second proton irradiation campaign has been carried out, but this time on microcr...

  10. Defect engineering in solar cell manufacturing and thin film solar cell development

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L. [National Renewable Energy Lab., Golden, CO (United States)

    1995-08-01

    During the last few years many defect engineering concepts were successfully applied to fabricate high efficiency silicon solar cells on low-cost substrates. Some of the research advances are described.

  11. Very low cost thin film CdS-Cu2S solar cell development using chemical spraying

    Science.gov (United States)

    Samara, G. A.; Jordan, J. F.

    1975-01-01

    A chemical spray process for the production of thin film CdS-Cu2S solar cells is discussed that is projected to cost less than $60/kW in very large scale production. The average efficiency of these cells has been improved from less than 0.3% in 1971 about 4.5% at present. Further developments for the process are considered to raise the efficiency, and to attain long life stability.

  12. Optimized Packing Density of Large CZTS Nanoparticles Synthesized by Hot-injection for Thin Film Solar Cells.

    OpenAIRE

    Engberg, Sara Lena Josefin; Lam, Yeng Ming; Schou, Jørgen

    2015-01-01

    The absorbing kesterite material, Cu2ZnSn(SxSe1-x)4 (CZTS), is very promising for future thin film solar cells. The material is non-toxic, the elements abundant, and it has a high absorption coefficient. These properties make CZTS a potential candidate also for large-scale applications. Here, solution processing allows for comparatively fast and inexpensive fabrication, and also holds the record efficiency in the kesterite family. Unfortunately, the record cell is deposited with a highly toxi...

  13. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  14. Unlinking absorption and haze in thin film silicon solar cells front electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Cuony, Peter; Battaglia, Corsin; Despeisse, Matthieu; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

    2010-11-15

    We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi-layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for a single light path but to a strong reduction of the cell current in the infrared part of the spectrum. Conversely, a current enhancement is shown with increasing front electrode haze up to a saturation of the current gain. This saturation correlates remarkably well with the haze of the front electrode calculated in silicon. This allows us to clarify the requirements for the front electrodes of micromorph cells. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

    CERN Document Server

    Wang, DongLin

    2014-01-01

    Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

  16. Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

    1994-09-01

    The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

  17. Analysis of post deposition processing for CdTe/CdS thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    McCandless, B.E.; Birkmire, R.W. (Inst. of Energy Conversion, Univ. of Delaware, Newark, DE (United States))

    1991-12-01

    A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400degC heat treatment with CdCl{sub 2} restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS{sub x}Te{sub 1-x} layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (V{sub oc}) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods. (orig.).

  18. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    Science.gov (United States)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  19. Deposition and characterization of (Zn,Mg)O buffer layers on CIGSSe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussmann, Benjamin; Erfurth, Felix; Schoell, Achim [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Niesen, Thomas; Palm, Joerg [Avancis GmbH, Muenchen (Germany); Grimm, Alexander [Hahn-Meitner-Institut Berlin (Germany); Umbach, Eberhard [Universitaet Wuerzburg (Germany). Experimentelle Physik II; Forschungszentrum Karlsruhe (Germany)

    2008-07-01

    (Zn, Mg)O buffer layers on Cu(In,Ga)(S,Se){sub 2}(CIGSSe) thin film solar cells are promising alternatives to CdS buffer layers by featuring comparable efficiencies, better environmental compatibility and the possibility to implement the deposition process into a vacuum processing line. The (Zn,Mg)O buffer layers are deposited by radio frequency magnetron co-sputtering from two separate ZnO and MgO ceramic sputter targets to control the Mg-content and therefore the band gap of the buffer layer. In our experimental setup the sputter preparation chamber is connected with a UHV analysis system which allows in-situ characterization with X-ray photoelectron spectroscopy (XPS). The interface between the absorber and the buffer layer is believed to have a major influence on the cell efficiency and is thus of particular interest in this work. This interface has been investigated during layer deposition by sequentially interrupting the sputter process and performing XPS scans. We observed island growth of (Zn,Mg)O on CIGSSe and a strong oxidation of the absorber surface induced by the deposit. In order to complement the chemical and electronic information with structural data, energy dispersive X-ray analysis, X-ray diffraction, and scanning electron microscopy have been applied.

  20. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    Institute of Scientific and Technical Information of China (English)

    陈乐; 王庆康; 沈向前; 陈文; 黄堃; 刘代明

    2015-01-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation;finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm–800 nm, and the ultimate efficiency increases more than 22%compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances.

  1. Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers

    Science.gov (United States)

    Chen, Le; Wang, Qing-Kang; Shen, Xiang-Qian; Chen, Wen; Huang, Kun; Liu, Dai-Ming

    2015-10-01

    Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain (FDTD) simulation; finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm-800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances. Project supported by the National High-Tech Research and Development Program of China (Grant No. 2011AA050518), the University Research Program of Guangxi Education Department, China (Grant No. LX2014288), and the Natural Science Foundation of Guangxi Zhuang Autonomous Region, China (Grant No. 2013GXNSBA019014).

  2. Two to six compound thin films by MOCVD for tandem solar cells

    Science.gov (United States)

    Britt, Jeffrey Scott

    Te/CdS solar cells has been helpful in improving efficiences. thin film solar cell efficiency of 14.6 percent has been achieved through these steps.

  3. Ion beam treatment of functional layers in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wendi

    2013-10-01

    In silicon thin-film solar cells, transparent conductive layers have to fulfill the following requirements: high conductivity as effective contact, high transparency to transmit the light into the cell, and a textured surface which provides light scattering. Magnetron sputtered and wet-chemically textured aluminum doped zinc oxide (ZnO:Al) films are widely used as the transparent conductor. The technological goal of this dissertation is to develop an alternative to the wet etching process for light trapping in the thin silicon absorber layers through modification of the glass/ZnO:Al or ZnO:Al/Si interfaces by ion beam treatment. The study focuses on the textured growth of ZnO:Al films on ion beam pretreated glass substrates, and the preparation and application of textured glass for light trapping. The technological aspects such as the etch rates of the glass substrate and ZnO:Al films with different ion beam configurations were studied. The experimental etch rates are compared with simulated and theoretically predicted values. With regard to the ion beam treatment of glass substrate, the influence of the ion pretreated glass on the growth of ZnO:Al films was investigated. The ZnO:Al films grown on ion beam pretreated glass substrates exhibit self-textured morphology with surface roughness of 40 nm while remaining highly conductive. Silicon thin-film solar cells prepared on the as-grown rough ZnO:Al films show that this front contact can provide excellent light trapping effect. The highest initial efficiencies for amorphous single junction solar cells on as-grown rough ZnO:Al films was 9.4%. The as-grown rough morphology was attributed to large conical ZnO:Al grains initiated from the ion pretreated glass surface. It was found that the roughness of the as-grown rough ZnO:Al film is proportional to the number of O dangling bonds created by ion beam treatment on the glass substrate. A growth model was proposed to explain the growth mechanism of ZnO:Al films on Zn- and

  4. CuIn(S,Se){sub 2}thin film solar cells from nanocrystal inks: Effect of nanocrystal precursors

    Energy Technology Data Exchange (ETDEWEB)

    Ford, Grayson M.; Guo Qijie [School of Chemical Engineering and The Energy Center, Purdue University, 480 Stadium Mall Dr., West Lafayette, IN 47907 (United States); Agrawal, Rakesh, E-mail: agrawalr@purdue.edu [School of Chemical Engineering and The Energy Center, Purdue University, 480 Stadium Mall Dr., West Lafayette, IN 47907 (United States); Hillhouse, Hugh W., E-mail: h2@uw.edu [School of Chemical Engineering and The Energy Center, Purdue University, 480 Stadium Mall Dr., West Lafayette, IN 47907 (United States); Department of Chemical Engineering, University of Washington, Seattle WA 98105 (United States)

    2011-10-31

    CuIn(S,Se){sub 2} thin film solar cells are fabricated by selenizing CuInS{sub 2} nanocrystals synthesized using a variety of copper and indium precursors. Specifically, copper and indium acetates, acetylacetonates, iodides, chlorides and nitrates are investigated to determine the effect of precursors on electronic properties and device performance. Nanocrystal synthesis with each of these precursors can be optimized to yield similar nanocrystal composition, size and structure. In addition, dense chalcopyrite CuIn(S,Se){sub 2} thin films with micron sized grains at the surface are formed upon selenization regardless of precursor type. Surprisingly, solar cells fabricated from each nanocrystal ink have roughly the same carrier concentrations of 10{sup 16} to 10{sup 17} cm{sup -3} in the absorber layer and achieve active area efficiencies of approximately 5%.

  5. Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011

    Energy Technology Data Exchange (ETDEWEB)

    Slafer, D.; Dalal, V.

    2012-03-01

    Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

  6. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  7. Cu-doped CdS and its application in CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Yi [School of Automation, Wuhan University of Technology, Wuhan, Hubei 430070 (China); College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212 (China); Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Deliang, E-mail: eedewang@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  8. Cu-doped CdS and its application in CdTe thin film solar cell

    Science.gov (United States)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  9. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  10. Cu-doped CdS and its application in CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures

  11. Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes

    OpenAIRE

    Battaglia, Corsin; Erni, Lukas; Boccard, Mathieu; Barraud, Loris; Escarré, Jordi; SöDerströM, Karin; Bugnon, Grégory; Billet, Adrian; Ding, Laura; Despeisse, Matthieu; Haug, Franz-Josef; De Wolf, Stefaan; Ballif, Christophe

    2011-01-01

    We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the...

  12. The effect of ZnS segregation on Zn-rich CZTS thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei; Chen, Jian; Yan, Chang; Hao, Xiaojing, E-mail: xj.hao@unsw.edu.au

    2015-05-25

    Highlights: • Secondary phase segregation in CZTS based solar cells has been studied by TEM. • A “Zn layer exchange” behaviour was found in sulphurisation of Zn/SnCu stacked layers. • XAS reveals a large spike-like CBO (>0.86 eV) between CZTS and ZnS. • Larger ZnS secondary phase proportion increases solar cell’s V{sub oc} but limits J{sub sc}. - Abstract: Analysis of ZnS segregation behaviour and its influence on the device performance has been made on the Zn-rich Cu{sub 2}ZnSnS{sub 4} thin film solar cells. Cross-sectional transmission electron microscopy images reveal that ZnS is the main secondary phase in the Cu{sub 2}ZnSnS{sub 4} layer obtained from a sulphurised Zn/CuSn metallic stack. The excess Zn diffuses from back contact region to top surface of Cu{sub 2}ZnSnS{sub 4} layer accumulating in the form of ZnS. The solar cell with a higher Zn concentration shows a large quantity of isolated ZnS grains at Cu{sub 2}ZnSnS{sub 4} top surface which is close to CdS/Cu{sub 2}ZnSnS{sub 4} heterojunction interface. Soft X-ray absorption spectroscopy indicates a large spike-like conduction band offset between Cu{sub 2}ZnSnS{sub 4} and ZnS. Consequently, such much ZnS precipitates would increase series resistance and generate lower short-circuit current and external quantum efficiency. However, appropriate amount of ZnS at the space charge region of the solar cell has beneficial effects by reducing the heterojunction interface recombination. Therefore, an improved open-circuit voltage and a higher shunt resistance are achieved. This paper provides a possible method to intentionally segregate ZnS at the space charge region by depositing the Zn layer at the bottom of co-sputtered CuSn layer. Although it is difficult to synthesis a pure phase Cu{sub 2}ZnSnS{sub 4} absorber, we can utilise the ZnS secondary phase to improve the Cu{sub 2}ZnSnS{sub 4} solar performance by controlling the Zn-excess amount.

  13. The effect of ZnS segregation on Zn-rich CZTS thin film solar cells

    International Nuclear Information System (INIS)

    Highlights: • Secondary phase segregation in CZTS based solar cells has been studied by TEM. • A “Zn layer exchange” behaviour was found in sulphurisation of Zn/SnCu stacked layers. • XAS reveals a large spike-like CBO (>0.86 eV) between CZTS and ZnS. • Larger ZnS secondary phase proportion increases solar cell’s Voc but limits Jsc. - Abstract: Analysis of ZnS segregation behaviour and its influence on the device performance has been made on the Zn-rich Cu2ZnSnS4 thin film solar cells. Cross-sectional transmission electron microscopy images reveal that ZnS is the main secondary phase in the Cu2ZnSnS4 layer obtained from a sulphurised Zn/CuSn metallic stack. The excess Zn diffuses from back contact region to top surface of Cu2ZnSnS4 layer accumulating in the form of ZnS. The solar cell with a higher Zn concentration shows a large quantity of isolated ZnS grains at Cu2ZnSnS4 top surface which is close to CdS/Cu2ZnSnS4 heterojunction interface. Soft X-ray absorption spectroscopy indicates a large spike-like conduction band offset between Cu2ZnSnS4 and ZnS. Consequently, such much ZnS precipitates would increase series resistance and generate lower short-circuit current and external quantum efficiency. However, appropriate amount of ZnS at the space charge region of the solar cell has beneficial effects by reducing the heterojunction interface recombination. Therefore, an improved open-circuit voltage and a higher shunt resistance are achieved. This paper provides a possible method to intentionally segregate ZnS at the space charge region by depositing the Zn layer at the bottom of co-sputtered CuSn layer. Although it is difficult to synthesis a pure phase Cu2ZnSnS4 absorber, we can utilise the ZnS secondary phase to improve the Cu2ZnSnS4 solar performance by controlling the Zn-excess amount

  14. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10-3 Ω· cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10-3 Ω· cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.

  15. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  16. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  17. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    Science.gov (United States)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  18. Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells

    International Nuclear Information System (INIS)

    The formation of a stable, reproducible, low-resistance contact to p-CdTe thin films is a major problem in the fabrication of efficient solar cells. Two general approaches to this problem are: the formation of a region of high carrier concentration under the contact to reduce the contact resistance, and the use of contact materials with a higher work function than p-CdTe. The second approach is investigated in this work using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe was carried out by the direct combination of the elemental vapors in a gas flow system and by the close-spaced sublimation, (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance has been found to be very similar to the Au/p-CdTe contact resistance

  19. A NEW CONCEPT TOWARD INDUSTRIALIZATION OF Cu-Ⅲ-Ⅵ2 THIN FILM SOLAR CELLS AND SOME PRELIMINARY EXPERIMENT RESULTS

    Institute of Scientific and Technical Information of China (English)

    L.X. Shao; H.L. Hwang

    2005-01-01

    A new concept of full vacuum manufacturing for Cu-Ⅲ-Ⅳ2 thin-film solar cells has been discussed. Cu-Ⅲ-Ⅳ2 thin-film solar cells manufactured using full in-line reactive sputtering will result in lower cost than that of the conventional method with CdS layer fabricated with chemical bath deposition (CBS) method. Using reactive sputtering process with organometallic gases, the compositions and electronic properties of Cu-Ⅲ-Ⅳ2 thin-film can be fine-tuned and precisely controlled. n-type Cu-Ⅲ-Ⅳ2 film and ZnS suffer layer can also be deposited using the in-line sputtering instead of using the CdS layer. The environmental pollution problems arising from using CdS can be eliminated and the ultimate goal of full in-line process development can then be realized. Some preliminary experimental results on a modal solar cell fabricated by the new technique in the new concept have been presented.

  20. Dye-sensitized solid-state solar cells fabricated by screen-printed TiO2 thin film with addition of polystyrene balls

    Institute of Scientific and Technical Information of China (English)

    Jing Han; Jin Mao Chen; Xiao Wen Zhou; Yuan Lin; Jing Bo Zhang; Jian Guang Jia

    2008-01-01

    The screen-printed nanoporous TiO2 thin film was employed to fabricate dye-sensitized solid-state solar cells using CuI as hole-transport materials. The solar cell based on nanoporous TiO2 thin film with large pores formed by the addition of polystyrene balls with diameter of 200 nm to the TiO2 paste exhibits photovoltaic performance enhancement, which is attributed to the good contact of CuI with surface of dye-sensitized thin film due to easy penetration of CuI in the film withlarge pores.

  1. Investigation of Cu2ZnSnS4 thin-film solar cells with carrier concentration gradient

    Science.gov (United States)

    Xu, Jiaxiong

    2016-11-01

    To investigate the effect of carrier concentration gradient on Cu2ZnSnS4 (CZTS) thin-film solar cells, the properties of CZTS solar cells were studied by numerical method. The photovoltaic performances of carrier concentration gradient CZTS solar cells were calculated by the solutions of Poisson's equation, continuity equation, and current density equation using AFors-Het v2.4 program. The carrier concentration gradient was changed to analyze its effect. Compared with CZTS solar cells without carrier concentration gradient, the photovoltaic performances of CZTS solar cells can be enhanced by using carrier concentration gradient absorber. The carrier concentration gradient can extend the distribution region of built-in electric field, which is beneficial to the drift of photo-generated carriers. However, the carrier concentration gradient also affects the recombination and series resistances of solar cells. When the defect density of CZTS layer is high, the photo-generated carriers are affected significantly by recombination, resulting in slight effect of carrier concentration gradient. Therefore, the defect density should be reduced to enhance the effect of carrier concentration gradient on improving conversion efficiency of CZTS thin-film solar cells.

  2. Sub-100 °C solution processed amorphous titania nanowire thin films for high-performance perovskite solar cells

    Science.gov (United States)

    Wu, Wu-Qiang; Chen, Dehong; Huang, Fuzhi; Cheng, Yi-Bing; Caruso, Rachel A.

    2016-10-01

    The present work demonstrates a facile one-step process to fabricate thin films of amorphous titania nanowires on transparent conducting oxide substrates via hydrolysis of potassium titanium oxide oxalate in an aqueous solution at 90 °C. The resultant titania nanowire thin films (that have not undergone further annealing) are efficient electron transport layers in CH3NH3PbI3 perovskite solar cells, yielding full sun solar-to-electricity conversion efficiencies of up to 14.67% and a stabilized efficiency of 14.00% under AM 1.5G one sun illumination, comparable to high temperature sintered TiO2 counterparts. The high photovoltaic performance is attributed to the porous nanowire network that facilitates perovskite infiltration, its unique 1D geometry and excellent surface coverage for efficient electron transport, as well as suppressed charge recombination between FTO and perovskite.

  3. Polycrystalline silicon thin film solar cells prepared by PECVD-SPC

    Energy Technology Data Exchange (ETDEWEB)

    Buitrago, R.H.; Risso, G.A.; Cutrera, M.; Battioni, M.; De Bernardez, L.; Schmidt, J.A.; Arce, R.D.; Koropecki, R.R. [Instituto de Desarrollo Tecnologico para la Industria Quimica, CONICET-UNL, Guemes 3450, CP 3000, Santa Fe (Argentina)

    2008-07-15

    Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until their complete crystallization is achieved. Our results show a complete crystallization of silicon with a grain size of less than a micron, with a dehydrogenation process at 500 C, leaving a remainder of less than 1% in hydrogen as monohydrate. The parameters of the cell estimated from the IV curve yield low values, FF<0.55, Icc <200 {mu}A and Voc<420 mV. The high series resistance is due to the grain size and defect density, which will be attempted to be improved by post-hydrogenation and rapid thermal annealing (RTA) methods at high temperatures. (author)

  4. Efficient Water-Splitting Device Based on a Bismuth Vanadate Photoanode and Thin-Film Silicon Solar Cells

    OpenAIRE

    Han, Lihao; Abdi, Fatwa F.; Van De Krol, Roel; Liu, Rui; Huang, Zhuangqun; Lewerenz, Hans-Joachim; Dam, Bernard; Zeman, Miro; Arno H. M. Smets

    2014-01-01

    A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2 % under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten–bismuth vanadate (W:BiVO_4) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light t...

  5. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Abou-Ras, D. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co KG Otto-Hahn-Ring 6, 81739 Munich (Germany); Neisser, A.; Wilchelmi, K. [SULFURCELL Solartechnik GmbH Barbara-McClintock-Strasse 11, 12489 Berlin (Germany); Lux-Steiner, M.Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de

    2009-02-02

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS{sub 2} (CIS) and Cu(In,Ga)(SSe){sub 2} (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules.

  6. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    International Nuclear Information System (INIS)

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS2 (CIS) and Cu(In,Ga)(SSe)2 (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules

  7. Development of copper sulfide/cadmium sulfide thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Szedon, J. R.; Biter, W. J.; Dickey, H. C.

    1982-03-08

    The most important accomplishments during this period were to demonstrate and to elucidate further the complex effects that occur during the aging of Cu/sub 2/S/CdS thin-film solar cells in flowing wet oxygen. There are two distinct effects. At constant illumination, the short-circuit current of cells aged at room temperature consistently decreases with time. The second effect, related to diode opposing current, is more involved and may result from several competing mechanisms. Over the short term (approx. 4 to 5 hours), the magnitude of diode opposing current decreases. After approx. 20 hours of aging, opposing current generally returns to the level achieved after hydrogen annealing which immediately preceded the aging sequence. Optical measurements of the spectral transmission of the Cu/sub 2/S layers in a cell content have been made using a silicon detector epoxied to the back of a CdS cell after the copper foil substrate was removed. There is no significant change in Cu/sub 2/S transmission behavior for wavelengths ranging from 525 to 1000 nm during wet-oxygen aging for periods of 2 to 36 hours. This suggests that the decrease in J/sub SC/ at constant illumination, for the aging experiments in a flowing wet-oxygen ambient, arises because of changes in minority-carrier transport properties of the Cu/sub 2/S. Before developing a method for using an epoxied silicon detector to measure optical behavior of the Cu/sub 2/S layer, we explored the possibility of using a junction-containing wafer of silicon as a substrate for deposited CdS films. Some monolithic structures were successfully fabricated. Comparisons were made of CdS grain structure details in the junction detector area and in an adjacent metallized area.

  8. Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Yan, Yanfa; Jiang, Jinchun; Yang, Pingxiong

    2015-05-20

    Earth-abundant material, kesterite Cu2ZnSnS4 (CZTS), demonstrates the tremendous potential to serve as the absorber layer for the bifacial thin-film solar cell. The exploration of appropriate sulfurization conditions including annealing temperature is significant to gain insight into the growth mechanism based on the substrates using transparent conductive oxides (TCO) and improve device performance. The kesterite solar absorbers were fabricated on ITO substrates by sulfurizing co-electroplated Cu-Zn-Sn-S precursors in argon diluted H2S atmosphere at different temperatures (475-550 °C) for 30 min. Experimental proof, including cross-section scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR transmission spectrum, and Raman and far-infrared spectroscopy, is presented for the crystallization of CZTS on an ITO substrate and the interfacial reaction between the ITO back contact and CZTS absorber. The complete conversion of precursor into CZTS requires at least 500 °C sulfurization temperature. The aggressive interfacial reaction leading to the out-diffusion of In into CZTS to a considerable extent, formation of tin sulfides, and electrically conductive degradation of ITO back contact occurs at the sulfurization temperatures higher than 500 °C. The bifacial devices obtained by 520 °C sulfurization exhibit the best conversion efficiencies and open circuit voltages. However, the presence of non-ohmic back contact (secondary diode), the short minority lifetime, and the high interfacial recombination rates negatively limit the open circuit voltage, fill factor, and efficiency, evidenced by illumination/temperature-dependent J-V, frequency-dependent capacitance-voltage (C-V-f), time-resolved PL (TRPL), and bias-dependent external quantum efficiency (EQE) measurements. PMID:25871647

  9. Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature.

    Science.gov (United States)

    Ge, Jie; Chu, Junhao; Yan, Yanfa; Jiang, Jinchun; Yang, Pingxiong

    2015-05-20

    Earth-abundant material, kesterite Cu2ZnSnS4 (CZTS), demonstrates the tremendous potential to serve as the absorber layer for the bifacial thin-film solar cell. The exploration of appropriate sulfurization conditions including annealing temperature is significant to gain insight into the growth mechanism based on the substrates using transparent conductive oxides (TCO) and improve device performance. The kesterite solar absorbers were fabricated on ITO substrates by sulfurizing co-electroplated Cu-Zn-Sn-S precursors in argon diluted H2S atmosphere at different temperatures (475-550 °C) for 30 min. Experimental proof, including cross-section scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, UV-vis-NIR transmission spectrum, and Raman and far-infrared spectroscopy, is presented for the crystallization of CZTS on an ITO substrate and the interfacial reaction between the ITO back contact and CZTS absorber. The complete conversion of precursor into CZTS requires at least 500 °C sulfurization temperature. The aggressive interfacial reaction leading to the out-diffusion of In into CZTS to a considerable extent, formation of tin sulfides, and electrically conductive degradation of ITO back contact occurs at the sulfurization temperatures higher than 500 °C. The bifacial devices obtained by 520 °C sulfurization exhibit the best conversion efficiencies and open circuit voltages. However, the presence of non-ohmic back contact (secondary diode), the short minority lifetime, and the high interfacial recombination rates negatively limit the open circuit voltage, fill factor, and efficiency, evidenced by illumination/temperature-dependent J-V, frequency-dependent capacitance-voltage (C-V-f), time-resolved PL (TRPL), and bias-dependent external quantum efficiency (EQE) measurements.

  10. Optimized conditions for the improvement of thin film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Efficient thin film CdS/CdTe solar cell performance requires optimum parameters of each layer of this cell and of the barrier structure. Moreover, the effect of optical losses, recombination losses at front and back surface of CdTe and recombination losses in the space-charge region (SCR) must be considered in order to really analyze the role of these parameters on the performance of these cells. This work is focused on studying theoretically the effect of the thickness of the front contact (ITO), thickness of the window layer (CdS), thickness of the absorber layer (CdTe), width of the space-charge region and electron lifetime on the efficiency of CdS/CdTe solar cells. The reflection losses from interfaces and absorption losses in ITO and CdS, front and rear surface recombination losses of CdTe as well as recombination losses in SCR have been studied. It has been observed that the short-circuit current strongly depends on the thickness of ITO, thickness of CdS, thickness CdTe and electron lifetime. The concentration of uncompensated impurities (Na − Nd) in CdTe, which determines the width of SCR, plays a key role in the generation of photocurrent. The recombination losses in the SCR decrease rapidly with increasing the carrier lifetime in this region and can be ignored at lifetime of 10−7 s. The reflectivity from the back contact introduces a small influence in increasing the short-current density particularly at thick absorber layer (5–8 μm). Under the conditions of Na − Nd ~ 1016 cm−3, τn = 10−6 s, dCdTe = 8 μm, dITO = 100 nm, and dCdS = 100 nm, the recombination and optical losses record their minimum ratio of 27%. Most of these losses (24%) are due to the optical losses. The efficiency of CdS/CdTe under these parameters is about 18.2% which is exactly matching with the recent experimental studies. Moreover, an ultrathin CdTe (= 1 μm) is sufficient to introduce high efficiency of 16.4%. - Highlights: • This work represents a theoretical study

  11. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    Science.gov (United States)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  12. Characterization of Optic Properties ZnO:Al Thin Film on Glass Substrate for Solar Cell Window

    International Nuclear Information System (INIS)

    It has been characterized a ZnO:Al thin film growth using sputtering technique for solar cell window. The aims of this research is to get a ZnO:Al thin film that can be used as a TCO (Transparent Conducting Oxide) on amorphous silicon solar cell. To get an optimum properties, deposition process has been done for various parameters, such as composition/concentration of Al, substrate temperature, gas pressure and deposition time. Based on experiments result, it is found that the optimum result was achieved at temperature 450 oC, gas pressure 6 x 10 -2 torr and time 1.5 hours. From optical properties (transmittance) measurements using UV-vis, it was found that the optimum results was achieved at temperature 450 oC. At this conditions, wave length (500 - 800) nm, the transmittance was (50 - 82) %, at pressure 6 x 10 -2 torr the transmittance was (50 - 80) % and at deposition time 1.5 hours was (49 - 81) %. For ZnO thin film, was at wave length (500 - 800) nm, the transmittance was (78 - 80) %. From micro structure analysis using SEM, it was found that the thickness layer of ZnO was 1.5 μm and 1.3 μm for ZnO: Al. While from surface morphology it was found that for ZnO thin layer the grains was distributed homogeneously, while for ZnO: Al the grains was distributed unhomogeneously. (author)

  13. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  14. Amorphous thin films for solar cell application. Final technical report, March 15, 1979-February 29, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Jonath, A D; Anderson, W W; Crowley, J L; MacMillan, H F; Junga, F A; Knudsen, J F; Monahan, K M; Thornton, J A

    1980-03-01

    Magnetron sputtering, a deposition method in which magnetic confinement of a plasma encourages high deposition rates at low working gas partial pressures, is under investigation in this program as a candidate production technology for large-scale manufacture of high-efficiency, thin-film amorphous silicon solar photovoltaic cells. The approach uses two dc magnetron geometries: (1) a low-cost planar magnetron (PM) system for exploratory and detailed examination of deposition parameter space; and (2) a cylindrical magnetron (CM) system, scalable to production sizes, for deposition of homogeneous films over large areas. Detailed descriptions of these two systems are included. During this first-year effort, amorphous silicon films and device structures were sputtered in both PM and CM systems under a wide range of deposition conditions (i.e., T/sub s/, P/sub Ar/, P/sub H/sub 2//) using both doped and undoped sputter targets. Measured electrical and optical film properties indicate that control over a wide range of conductivity, photoconductivity, conductivity activation energy, and optical and infrared absorption behavior is achievable. Multiple depositions to fabricate simple MIS device structures and simultaneously to deposit monitor samples of individual constituent layers have been successful. Other program highlights are: (1) deposition rates as great as 1500 A/min were achieved in high-power dc magnetron operation at practical substrate-target spacings; (2) p-type and n-type a-Si:H consistently deposited from p- and n-type targets, respectively; (3) demonstrated correlation of argon and hydrogen partial pressure variations with optical, electronic, and structural properties of magnetron-sputtered a-Si:H films; and (4) initial depositions have achieved properties comparable to those in films made by rf sputtering and glow-discharge methods.

  15. Surface Modification of Aerosol-Assisted CVD Produced TiO2 Thin Film for Dye Sensitised Solar Cell

    Directory of Open Access Journals (Sweden)

    SuPei Lim

    2014-01-01

    Full Text Available We report a simple and convenient method for the preparation of Ag/TiO2 thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+ on aerosol-assisted chemical vapour deposited TiO2 thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements and J-V characterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC conversion efficiency, which was achieved after modification of the TiO2 film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.

  16. Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raksa, Phathaitep; Nilphai, Sanpet; Gardchareon, Atcharawon [Department of Physics, Faculty of Science, Chiang Mai University, and NANOTEC Center of Excellence at Chiang Mai University, Chiang Mai 50200 (Thailand); Choopun, Supab, E-mail: supab@science.cmu.ac.t [Department of Physics, Faculty of Science, Chiang Mai University, and NANOTEC Center of Excellence at Chiang Mai University, Chiang Mai 50200 (Thailand)

    2009-07-01

    The ZnO dye-sensitized solar cells (DSSCs) with different photoelectrodes were studied on the effect of CuO layer as a barrier layer toward power conversion characteristics. The structures of DSSCs based on ZnO as a photoelectrode, Eosin-Y as a dye sensitizer, iodine/iodide solution as an electrolyte and Pt/FTO as a counterelectrode. CuO powder, nanowire prepared by oxidation reaction of copper powder and CuO thin film prepared by evaporation copper thin film, were used as a layer on the top of ZnO layer to form blocking layer. The photocurrent, photovoltage and power conversion efficiency characteristics for DSSCs were measured under illumination of simulated sunlight obtained from a solar simulator with the radiant power of 100 mW/cm{sup 2}. It was found that ZnO DSSCs with CuO thin film exhibited highest current density of 5.10 mA/cm{sup 2} and highest power conversion efficiency of 0.92% than those of CuO powder and nanowire. The enhancement of the power conversion efficiency can be explained in terms of the retardation of the interfacial recombination dynamics of CuO blocking layer.

  17. Combined model of non-conformal layer growth for accurate optical simulation of thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sever, M.; Lipovsek, B.; Krc, J.; Campa, A.; Topic, M. [University of Ljubljana, Faculty of Electrical Engineering Trzaska cesta 25, Ljubljana 1000 (Slovenia); Sanchez Plaza, G. [Technical University of Valencia, Valencia Nanophotonics Technology Center (NTC) Valencia 46022 (Spain); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Institute of Microengineering IMT, Photovoltaics and Thin-Film Electronics Laboratory, Neuchatel 2000 (Switzerland); Duchamp, M. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons Institute for Microstructure Research, Research Centre Juelich, Juelich D-52425 (Germany); Soppe, W. [ECN-Solliance, High Tech Campus 5, Eindhoven 5656 AE (Netherlands)

    2013-12-15

    In thin-film silicon solar cells textured interfaces are introduced, leading to improved antireflection and light trapping capabilities of the devices. Thin-layers are deposited on surface-textured substrates or superstrates and the texture is translated to internal interfaces. For accurate optical modelling of the thin-film silicon solar cells it is important to define and include the morphology of textured interfaces as realistic as possible. In this paper we present a model of thin-layer growth on textured surfaces which combines two growth principles: conformal and isotropic one. With the model we can predict the morphology of subsequent internal interfaces in thin-film silicon solar cells based on the known morphology of the substrate or superstrate. Calibration of the model for different materials grown under certain conditions is done on various cross-sectional scanning electron microscopy images of realistic devices. Advantages over existing growth modelling approaches are demonstrated - one of them is the ability of the model to predict and omit the textures with high possibility of defective regions formation inside the Si absorber layers. The developed model of layer growth is used in rigorous 3-D optical simulations employing the COMSOL simulator. A sinusoidal texture of the substrate is optimised for the case of a micromorph silicon solar cell. More than a 50 % increase in short-circuit current density of the bottom cell with respect to the flat case is predicted, considering the defect-free absorber layers. The developed approach enables accurate prediction and powerful design of current-matched top and bottom cell.

  18. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se{sub 2} semiconductors for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baier, Robert

    2012-06-25

    Solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10{sup 11} cm{sup -2} and ∼2.1 x 10{sup 12} cm{sup -2} were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the

  19. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se2 semiconductors for thin film solar cells

    International Nuclear Information System (INIS)

    Solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 1011 cm-2 and ∼2.1 x 1012 cm-2 were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the first time on CIGSe thin films

  20. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  1. In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

    OpenAIRE

    Buehlmann, Peter; Bailat, J.; Dominé, Didier; Billet, Adrian; Meillaud, F.; Feltrin, Andrea; Ballif, Christophe

    2008-01-01

    We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40 V, fill factor=71.9%, and Jsc=12.1 mA/cm2) is achiev...

  2. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    Science.gov (United States)

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. PMID:26413646

  3. Solution-Processed Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source

    Science.gov (United States)

    Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

    2015-08-01

    Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

  4. Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film

    Science.gov (United States)

    Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

    2015-08-01

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03046c

  5. Impacts of electron irradiation on the optical and electrical properties of CIGS thin films and solar cells

    International Nuclear Information System (INIS)

    Full text : A thin film solar cell composed of polycrystalline Cu(In,Ga)Se2 (CIGS) is essentially light-weight and shows high conversion efficiency and excellent radiation tolerance. These characteristics lead to CIGS solar cells very attractive for space applications. However, only a few irradiation studies have been carried out on CIGS thin films and entire solar cell structure, resulting in limited knowledge on the mechanisms responsible for the irradiation-induced damage. In addition, the cell performance is known to change due to the damp heat and/or light soaking effects. Accordingly, understanding the degradation mechanisms of CIGS, ZnO, a buffer, Mo, and even glass components is necessary for not only space use but also commercial use. In this presentation, electron irradiation effects will be discussed for CIGS solar cells and each layer that composed the CIGS solar cell structure such as CIGS, CdS, undoped ZnO, and Ga- or Al-doped ZnO films. Electron irradiation experiments were carried out using the DYNAMITRON electron accelerator. The electron energy was fixed at 2 MeV and the fluence was varied between 1 * 1013 and 1 * 1018 cm-2. All the irradiated CIGS films exhibited common PL peaks originating from donor to acceptor transitions. PL peak intensity due to Cu-related point defects, which did not affect solar cell performance significantly, increased in CIGS thin films with increasing electron irradiation. Conversely, transmittance spectra of all the irradiated ZnO and ZnO:Al films did not change by the electron irradiation up to 6 * 1017 cm-2. The normalized performance parameters of the irradiated CIGS solar cell such as Voc, Jsc, and η are shown in article as a function of irradiation fluence. η tended to decrease in comparison with Voc and Jsc for large irradiation fluence. Shunt resistance and series resistance of the CIGS solar cells degraded even though the resistivity of each layer did not change after electron irradiation. The result

  6. Electrochemical Deposition of CuxSnySzO Thin Films and Their Application for Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Yuki Nakashima

    2012-01-01

    Full Text Available CuxSnySzO (CTSO thin films were deposited from an aqueous solution containing CuSO4, SnSO4, and Na2S2O3 by electrochemical techniques. The deposited films were characterized by Auger electron spectroscopy, X-ray diffraction, and optical transmission spectroscopy. The photoelectrochemical measurement showed that the films have p-type conduction and photosensitivity. ZnO/CTSO heterojunction solar cells were fabricated. Rectification properties were observed, and the cell showed an efficiency of 4.9×10−3% under AM1.5 illumination.

  7. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  8. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells

    Science.gov (United States)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, Junho; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-06-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the

  9. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  10. Effective Light Trapping in Thin Film Silicon Solar Cells with Nano- and Microscale Structures on Glass Substrate.

    Science.gov (United States)

    Bong, Sungjae; Ahn, Shihyun; Anh, Le Huy Tuan; Kim, Sunbo; Park, Hyeongsik; Shin, Chonghoon; Park, Jinjoo; Lee, Younjung; Yi, Junsin

    2016-05-01

    For thin film silicon-based solar cells, effective light trapping at a broad range of wavelengths (400-1100 nm) is necessary. Normally, etching is only carried out with TCOs, such as SnO2:F and impurity doped ZnO, to form nano-sized craters in the surface morphology to confer a light trapping effect. However, in this study, prior to ZnO:Al etching, periodic structures on the glass substrates were made by photolithography and wet etching to increase the light scattering and internal reflection. The use of periodic structures on the glass substrate resulted in higher haze ratios in the range from 550 nm to 1100 nm, which is the optical absorption wavelength region for thin film silicon solar cells, than obtained by simple ZnO:Al etching. The periodically textured glass with micro-sized structures compensates for the low haze ratio at the middle and long wavelengths of wet etched ZnO:Al. ZnO:Al was deposited on the periodically textured glass, after which the ZnO:Al surface was also etched randomly using a mixed acid solution to form nano-sized craters. The thin film silicon solar cells with 350-nm-thick amorphous silicon absorber layer deposited on the periodic structured glass and etched ZnO:Al generated up to 10.68% more photocurrent, with 11.2% increase of the conversion efficiency compared to the cell deposited on flat glass and etched ZnO:Al. PMID:27483855

  11. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  12. Optimized conditions for the improvement of thin film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, H.A., E-mail: hussein_abdelhafez2000@yahoo.com

    2015-08-31

    Efficient thin film CdS/CdTe solar cell performance requires optimum parameters of each layer of this cell and of the barrier structure. Moreover, the effect of optical losses, recombination losses at front and back surface of CdTe and recombination losses in the space-charge region (SCR) must be considered in order to really analyze the role of these parameters on the performance of these cells. This work is focused on studying theoretically the effect of the thickness of the front contact (ITO), thickness of the window layer (CdS), thickness of the absorber layer (CdTe), width of the space-charge region and electron lifetime on the efficiency of CdS/CdTe solar cells. The reflection losses from interfaces and absorption losses in ITO and CdS, front and rear surface recombination losses of CdTe as well as recombination losses in SCR have been studied. It has been observed that the short-circuit current strongly depends on the thickness of ITO, thickness of CdS, thickness CdTe and electron lifetime. The concentration of uncompensated impurities (N{sub a} − N{sub d}) in CdTe, which determines the width of SCR, plays a key role in the generation of photocurrent. The recombination losses in the SCR decrease rapidly with increasing the carrier lifetime in this region and can be ignored at lifetime of 10{sup −7} s. The reflectivity from the back contact introduces a small influence in increasing the short-current density particularly at thick absorber layer (5–8 μm). Under the conditions of N{sub a} − N{sub d} ~ 10{sup 16} cm{sup −3}, τ{sub n} = 10{sup −6} s, d{sub CdTe} = 8 μm, d{sub ITO} = 100 nm, and d{sub CdS} = 100 nm, the recombination and optical losses record their minimum ratio of 27%. Most of these losses (24%) are due to the optical losses. The efficiency of CdS/CdTe under these parameters is about 18.2% which is exactly matching with the recent experimental studies. Moreover, an ultrathin CdTe (= 1 μm) is sufficient to introduce high

  13. A comparative study on the performance of Kesterite based thin film solar cells using SCAPS simulation program

    Science.gov (United States)

    Simya, O. K.; Mahaboobbatcha, A.; Balachander, K.

    2015-06-01

    A comparative study of thin film solar cells based on CZTS, CZTSe, and CZTSSe (Copper Zinc Tin Sulphur Selenium) absorbers layers were simulated with Cadmium Sulphide (CdS) as buffer layer and Zinc Oxide (ZnO) as window layer using a solar cell capacitance simulator (SCAPS). The influences of series resistance, band to band recombination, defects and interfaces, thickness of (CZTS|CZTSe|CZTSSe) absorber layer, (CdS) buffer layer and transparent conductive oxide layer (ZnO) on the photovoltaic cell parameters were studied in detail. Improvements in efficiency were achieved by changing the back contact metal work function (BMWF) and choosing the flat band option in SCAPS software. Based on the best possible optimisation, an efficiency (η) of 12.03%, 13.16% and 15.77% were obtained for CZTS, CZTSe, and CZTSSe respectively. The performance of thin film photovoltaic devices (TFPV), for Mo back contact before optimisation and the SCAPS simulated values (flat band) after optimisation were described in detail to have in-depth understanding for better design of experiments (DOE) to obtain high efficiency solar cells.

  14. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    International Nuclear Information System (INIS)

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  15. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  16. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  17. Dipolar and Quadrupolar Modes of Si02/Au Nanoshell Enhanced Light Trapping in Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    BAI Yi-Ming; WANG Jun; CHEN Nuo-Fu; YAO Jian-Xi; ZHANG Xing-Wang; YIN Zhi-Gang; ZHANG Han; HUANG Tian-Mao

    2011-01-01

    @@ Dipolar and quadrupolar resonance wavelengths of SiO2/Au nanoshell surface plasmons are designed at 560nm to enhance the light trapping in thin film solar cells.In order to quantitatively describe the light trapping effect,the forward-scattering efficiency(FSE)and the light trapping efficiency(LTE) are proposed by considering the light scattering direction of SiO2/Au nanoshells.Based on the Mie theory, the FSE and the LTE are calculated for SiO2/Au nanoshells of different dimensions, and the contributions of the dipolar and quadrupolar modes to the light trapping effect are analyzed in detail.When the surface coverage of nanoshells is 5%, the LTEs are 21.7% and 46.9% for SiO2/Au nanoshells with sizes of(31 nm, 69nm) and(53nm, 141 nm), respectively.The results indicate that the SiO2/Au nanoshell whose quadrupolar mode peak is designed to the strongest solar energy flux density of the solar spectrum facilitates the further enhancement of light harvesting in thin film solar cells.

  18. Thin-film cadmium telluride solar cells: Final subcontract report, 1 May 1985--31 May 1988

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-06-01

    This report describes results of research performed to demonstrate thin-film cadmium telluride heterojunction solar cells with a total area greater than 1 cm/sup 2/ and efficiencies of 13% or higher. Efforts were directed to (1) the deposition, resistivity control, and characterization of p-CdTe films by combining the vapor of the elements (CVE) and close-spaced sublimation (CSS) techniques; (2) the deposition and characterization of transparent conducting semiconductors; (3) the deposition of p-HgTe as a low-resistance ohmic contact to p-CdTe; (4) the electrical properties of CdS/CdTe heterojunctions; and (5) the preparation and evaluation of heterojunction solar cells. CdS/CdTe solar cells showed the best photovoltaic characteristics, and the best cell had a conversion efficiency of about 10.6%. 20 refs., 30 figs., 1 tab.

  19. Light-scattering effectiveness of two-dimensional disordered surface textures in thin-film silicon solar cells.

    Science.gov (United States)

    Yeh, Pinghui S; Chen, Chien-Wei; Yang, Bing-Ru; Hong, Lu-Sheng

    2014-05-01

    To compare the light-scattering effectiveness of surface-textured solar cells of various design parameters such as density, diameter, refractive index, and location, this study used a new parameter, optical path length gain (OPLG), that is more sensitive than Haze. By modeling two-dimensional disordered textures as a structure that comprises many randomly distributed, small, spherical scatterers, ray-tracing simulations of surface-textured thin-film silicon solar cells were performed. The simulation results suggest that: (1) the optimal scatterer diameter for hydrogenated amorphous silicon (a-Si:H) solar cells is ~50 nm, producing an average OPLG of 3.5; and (2) the optimal scatterer diameter for a-Si:H/μc-Si:H (hydrogenated microcrystalline silicon) tandem cells is ~75 nm, producing an average OPLG of 3.4 and an increase in the bandwidth of the absorption spectrum of 14.5%. PMID:24921870

  20. Preparation and characterization of Cu2-xZn1+ySnS4 for thin films solar cells

    OpenAIRE

    D'Angelo Bandres, Renato

    2015-01-01

    CZTS non-stoichiometric thin films [Cu2-xZn1+xSnS4)] for solar cells applications have been successfully deposited on glass substrates using two different types of synthesis and two effective non vacuum deposition methods: as is dip-coating into a sol or drop-wise ink spin-coating. The first synthesis (dip coating) is a two-solution sol-gel, where the first solution is composed of metal salts dissolved in methanol and the second thiourea dissolved in ethylene glycol. As a tin source, tin chlo...

  1. Solution-processed highly efficient Cu2ZnSnSe4 thin film solar cells by dissolution of elemental Cu, Zn, Sn, and Se powders.

    Science.gov (United States)

    Yang, Yanchun; Wang, Gang; Zhao, Wangen; Tian, Qingwen; Huang, Lijian; Pan, Daocheng

    2015-01-14

    Solution deposition approaches play an important role in reducing the manufacturing cost of Cu2ZnSnSe4 (CZTSe) thin film solar cells. Here, we present a novel precursor-based solution approach to fabricate highly efficient CZTSe solar cells. In this approach, low-cost elemental Cu, Zn, Sn, and Se powders were simultaneously dissolved in the solution of thioglycolic acid and ethanolamine, forming a homogeneous CZTSe precursor solution to deposit CZTSe nanocrystal thin films. Based on high-quality CZTSe absorber layer, pure selenide CZTSe solar cell with a photoelectric conversion efficiency of 8.02% has been achieved without antireflection coating. PMID:25494493

  2. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  3. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    Science.gov (United States)

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-12-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation & immersion (E & I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm2) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

  4. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

    Science.gov (United States)

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-12-03

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

  5. Enhanced performance of flexible nanocrystalline silicon thin-film solar cells using seed layers with high hydrogen dilution.

    Science.gov (United States)

    Lee, Ji-Eun; Kim, Donghwan; Yoon, Kyung Hoon; Cho, Jun-Sik

    2013-12-01

    Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region. PMID:24266159

  6. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiNx/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  7. Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

    Science.gov (United States)

    Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

    2015-10-14

    Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost. PMID:26390182

  8. Characterization of CuInSe{sub 2}/CdS thin-film solar cells prepared using CBD

    Energy Technology Data Exchange (ETDEWEB)

    Vidyadharan Pillai, P.K.; Vijayakumar, K.P. [Department of Physics, Cochin University of Science and Technology, Kochi, Kerala (India)

    1997-12-19

    CuInSe{sub 2}/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J-V characteristics of the devices prepared with different thicknesses of CdS and CuInSe{sub 2} were studied. The typical solar cell parameters obtained for the best cell are: V{sub oc}=365 mV, J{sub sc}=12 mA/cm{sup 2}, FF=61%, and {eta}=3.1% under an illumination of 85 mW/cm{sup 2} on a cell of active area 0.1 cm{sup 2}. The J-V and C-V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7

  9. Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In order to enhance light absorption of thin film poly-crystalline silicon(TF poly-Si)solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory,the effective photon trapping flux(EPTF)and effective photon trapping efficiency(EPTE)were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures.The EPTF,EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer.With an optimum size and density of SiO2/Au nanoshell light trapping layer,the EPTE could reach up to 40%due to the enhancement of light trapping over a broad spectral range,especially from 500 to 800 nm.

  10. Ultimate form freedom in thin film solar cells by postmanufacture laser-based processing

    NARCIS (Netherlands)

    Gilot, J.; Emelin, B.; Galagan, Y.; Mandamparambil, R.; Andriessen, R.

    2015-01-01

    Thin film photovoltaics can be beneficial for specific applications like building integrated photovoltaics. To fully exploit the differentiator of form freedom, the interconnections in thin film modules can be tuned depending on the required module output. Traditionally, an alternation of coating an

  11. Preparation routes based on magnetron sputtering for tungsten disulfide (WS2) films for thin-film solar cells

    International Nuclear Information System (INIS)

    The semiconductor tungsten disulfide (WS2) exhibits van der Waals bonding, crystallizes in a layer-type structure and is of interest as an absorber layer for thin-film solar cells. In this review article different preparation routes for WS2 thin films, based on magnetron sputtering, are reviewed. Films prepared by direct magnetron sputtering, though exhibiting quite a good structural quality, are not or only poorly photoactive. This can be attributed to the generation of recombination centers, especially sulfur vacancies, during the ion bombardment of the films, due to the low defect-formation energy of tungsten disulfide, an intrinsic property of transition metal dichalcogenides. A promising preparation route, which leads to photoactive WS2 films, is a two-step process, where, in a first step, a sulfur-rich, X-ray amorphous tungsten sulfide is deposited at low substrate temperatures onto a thin metal film (Ni, Co). This film sandwich is after wards annealed in an ampoule in a sulfur atmosphere or in flowing gas with a sufficient H2S partial pressure. From in-situ transmission electron microscopy and energy-dispersive X-ray diffraction, it was found that the WS2 film crystallization with a pronounced (001) texture is closely related to the formation of the liquid (eutectic) metal-sulfur phase. Based on these in-situ investigations the growth of the 2-dimensional WS2 nanosheets from an amorphous WS3+x precursor can be described as an amorphous solid-liquid-crystalline solid process (SLS), somewhat similar to the well-known vapor-liquid-solid (VLS) process for the growth of whiskers or nanorods and nanotubes. Research opportunities, to overcome current limitations for a broad use of WS2 (and MoS2) as thin-film solar cell absorbers are given. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Nano-structured CuO-Cu2O Complex Thin Film for Application in CH3NH3PbI3 Perovskite Solar Cells

    Science.gov (United States)

    Chen, Lung-Chieh; Chen, Cheng-Chiang; Liang, Kai-Chieh; Chang, Sheng Hsiung; Tseng, Zhong-Liang; Yeh, Shih-Chieh; Chen, Chin-Ti; Wu, Wen-Ti; Wu, Chun-Guey

    2016-09-01

    Nano-structured CuO-Cu2O complex thin film-based perovskite solar cells were fabricated on an indium tin oxide (ITO)-coated glass and studied. Copper (Cu) thin films with a purity of 99.995 % were deposited on an ITO-coated glass by magnetron reactive sputtering. To optimize the properties of the nano-structured CuO-Cu2O complex thin films, the deposited Cu thin films were thermally oxidized at various temperatures from 300 to 400 °C. A CH3NH3PbI3 perovskite absorber was fabricated on top of CuO-Cu2O complex thin film by a one-step spin-coating process with a toluene washing treatment. Following optimization, the maximum power conversion efficiency (PCE) exceeded 8.1 %. Therefore, the low-cost, solution-processed, stable nano-structured CuO-Cu2O complex thin film can be used as an alternative hole transport layer (HTL) in industrially produced perovskite solar cells.

  13. Nano-structured CuO-Cu2O Complex Thin Film for Application in CH3NH3PbI3 Perovskite Solar Cells.

    Science.gov (United States)

    Chen, Lung-Chieh; Chen, Cheng-Chiang; Liang, Kai-Chieh; Chang, Sheng Hsiung; Tseng, Zhong-Liang; Yeh, Shih-Chieh; Chen, Chin-Ti; Wu, Wen-Ti; Wu, Chun-Guey

    2016-12-01

    Nano-structured CuO-Cu2O complex thin film-based perovskite solar cells were fabricated on an indium tin oxide (ITO)-coated glass and studied. Copper (Cu) thin films with a purity of 99.995 % were deposited on an ITO-coated glass by magnetron reactive sputtering. To optimize the properties of the nano-structured CuO-Cu2O complex thin films, the deposited Cu thin films were thermally oxidized at various temperatures from 300 to 400 °C. A CH3NH3PbI3 perovskite absorber was fabricated on top of CuO-Cu2O complex thin film by a one-step spin-coating process with a toluene washing treatment. Following optimization, the maximum power conversion efficiency (PCE) exceeded 8.1 %. Therefore, the low-cost, solution-processed, stable nano-structured CuO-Cu2O complex thin film can be used as an alternative hole transport layer (HTL) in industrially produced perovskite solar cells. PMID:27637894

  14. Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-07-01

    Cadmium sulfide (CdS) thin films are the most commonly used window materials for high efficient cadmium telluride (CdTe) and chalcopyrite polycrystalline thin-film photovoltaic devices. High efficient CdS/CdTe solar cells with thin CdS films have been developed using ultrathin CdS films with a thickness of less than 0.1 μm. CdS films were deposited on transparent conductive oxide (TCO)/glass substrates by the metal organic chemical vapor deposition (MOCVD) technique. CdTe films were subsequently deposited by the close-spaced sublimation (CSS) technique. The screen printing and sintering method fabricated carbon and silver electrodes. Cell performance depends primarily on the electrical and optical properties of CdS films. Therefore we started to develop higher-quality CdS films and found clear differences between high- and low-quality CdS films from the analyses of scanning electron microscope (SEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS), thermal desorption spectrometry (TDS) and Fourier transforms-infrared spectrometry (FT-IR) measurements. As a result of controlling the quality of CdS films, a photovoltaic conversion efficiency of 10.5% has been achieved for size of 1376 cm2 of the solar cells under the Air Mass (AM) 1.5 conditions of the Japan Quality Assurance Organization.

  15. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    Science.gov (United States)

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-01

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices. PMID:27173477

  16. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    Science.gov (United States)

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-01

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  17. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Siol, Sebastian; Dhakal, Tara P.; Gudavalli, Ganesh S.; Rajbhandari, Pravakar P.; DeHart, Clay; Baranowski, Lauryn L.; Zakutayev, Andriy

    2016-06-08

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in ..beta..-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure ..beta..-In2S3 could be deposited using a broad range of substrate temperatures between 500 degrees C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (-2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  18. Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells.

    Science.gov (United States)

    Duncan, Douglas A; Kephart, Jason M; Horsley, Kimberly; Blum, Monika; Mezher, Michelle; Weinhardt, Lothar; Häming, Marc; Wilks, Regan G; Hofmann, Timo; Yang, Wanli; Bär, Marcus; Sampath, Walajabad S; Heske, Clemens

    2015-08-01

    On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.

  19. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    International Nuclear Information System (INIS)

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells

  20. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P., E-mail: kpv@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin-682022 (India); Kumar, K. Rajeev [Department of Instrumentation, Cochin University of Science and Technology, Cochin-682022 (India)

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  1. Multilayer nanoparticle arrays for broad spectrum absorption enhancement in thin film solar cells

    CERN Document Server

    Krishnan, Aravind; Krishna, Siva Rama; Khan, Mohammed Zafar Ali

    2013-01-01

    In this paper, we present a theoretical study on the absorption efficiency enhancement of a thin film amorphous Silicon (a-Si) photovoltaic cell over a broad spectrum of wavelengths using multiple nanoparticle arrays. The light absorption efficiency is enhanced in the lower wavelengths by a nanoparticle array on the surface and in the higher wavelengths by another nanoparticle array embedded in the active region. The efficiency at intermediate wavelengths is enhanced by the constructive interference of plasmon coupled light. We optimize this design by tuning the radius of particles in both arrays, the period of the array and the distance between the two arrays. The optimization results in 61.44% increase in total quantum efficiency for a 500 nm thick a-Si substrate.

  2. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    Science.gov (United States)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  3. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  4. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Science.gov (United States)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  5. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    International Nuclear Information System (INIS)

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%

  6. High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as N-Type Layer

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2013-04-01

    High-efficiency heterojunction solar cells consisting of a nondoped Ga2O3 thin film as an n-type semiconductor layer and a p-type Cu2O sheet as the active layer as well as the substrate, prepared by thermally oxidizing a Cu sheet, are demonstrated. The use of an n-type Ga2O3 thin film can greatly improve the performance of n-Ga2O3/p-Cu2O heterojunction solar cells. The highest efficiency of 5.38% was obtained in an Al-doped ZnO/Ga2O3/Cu2O heterojunction solar cell fabricated with an n-Ga2O3 thin-film layer prepared at room temperature with a thickness of 75 nm by a pulsed laser deposition method.

  7. Dual-Layer Nanostructured Flexible Thin-Film Amorphous Silicon Solar Cells with Enhanced Light Harvesting and Photoelectric Conversion Efficiency.

    Science.gov (United States)

    Lin, Yinyue; Xu, Zhen; Yu, Dongliang; Lu, Linfeng; Yin, Min; Tavakoli, Mohammad Mahdi; Chen, Xiaoyuan; Hao, Yuying; Fan, Zhiyong; Cui, Yanxia; Li, Dongdong

    2016-05-01

    Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth. PMID:27052357

  8. Characterization of CdS thin film in high efficient CdS/CdTe solar cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-06-01

    Cadmium sulfide (CdS) thin film is the most commonly used window material for high-efficient cadmium telluride (CdTe) thin-film photovoltaic devices. High-efficient CdS/CdTe solar cells have been developed using ultra-thin CdS films having a thickness of below 0.1 μm. CdS film is deposited on transparent conductive oxide (TCO) film coated glass substrates by the metal organic chemical vapor deposition (MOCVD) technique, CdTe film is subsequently deposited by the close-spaced sublimation (CSS) technique. Finally, carbon and Ag-In electrodes are fabricated by the screen printing and sintering method. Cell performance depends primarily on the electrical and optical properties of CdS film, and hence we started to develop higher quality CdS film and found out clear differences between high- and low-quality CdS films from various analyses: SEM, AFM, SIMS, TDS and FT-IR. As a result of controlling qualities of CdS films, photovoltaic conversion efficiency of 10.5% has been achieved for a size of 1376 cm 2 of the solar module under air mass (AM) 1.5 conditions by the Japan Quality Assurance Organization (JQA).

  9. Polymer assisted solution processing of Ti-doped indium oxide transparent conducting thin films for organic solar cells

    International Nuclear Information System (INIS)

    Highlights: • Polymer assisted solution process. • Ti-doped indium oxide (TIO) transparent conducting films. • Replacement of sputtered ITO with polymer-assisted-solution-coated TIO films. • High mobility transparent conducting films. • Application of polymer-assisted-solution-coated TIO films to organic solar cells. - Abstract: We report the preparation and evaluation of Ti-doped indium oxide (TIO) transparent conducting films by a polymer-assisted solution (PAS) process, as well as the evaluation of this type of film as a transparent cathode in an inverted organic solar cell (IOCS). Both Ti- and In-PASs have been synthesized by coordinating Ti- and In-anionic complexes with polyethyleneimine. The final TIO–PAS was formed by mixing Ti-PAS into In-PAS with a Ti concentration between 1 at.% and 7 at.%. The TIO–PAS was spin-coated onto glass substrates to form uniform thin films of Ti-doped indium oxide, which were then annealed at high temperature. The optimum Ti concentration to achieve the best electrical and optical properties of PAS–TIO films was found to be 3 at.%. With the film thickness of 650 nm, PAS–TIO films had a sheet resistance of 65 Ω/sq and an optical transmittance greater than 85%. The feasibility of PAS-coated TIO thin film as a transparent electrode was evaluated by applying it to the fabrication of IOSCs, which showed the energy conversion efficiency of 4.60%

  10. On-Orbit Demonstration Of Thin-Film Multi-Junction Solar Cells And Lithium-Ion Capacitors As Bus Components

    Science.gov (United States)

    Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Toyota, Hiroyuki; Imaizumi, Mitsuru; Kobayashi, Yuki; Takamoto, Tatsuya; Uno, Masatoshi; Shimada, Takanobu

    2011-10-01

    This paper describes an on-orbit demonstration plan for a lightweight solar panel using thin-film multi-junction (MJ) solar cells and aluminum-laminated lithium-ion capacitors (LICs). Thin-film MJ solar cells such as inverted metamorphic InGaP/GaAs/InGaAs 3J cells have flexibility as well as conversion efficiencies superior to conventional rigid 3J solar cells. A substantial reduction of satellite mass is achieved by the combination of thin-film MJ solar cells and light flexible paddles. An LIC is a hybrid-type capacitor that uses activated carbon as the cathode and carbon material pre-doped with lithium ion as the anode. LICs can be rapidly charged and discharged, and can operate in a wide temperature range for long periods. LICs are therefore suitable for long-term missions such as planetary explorations. Although these devices are very promising, so far there has been no opportunity to demonstrate their use in orbit. A lightweight thin solar panel with thin-film MJ solar cells will be installed on the Small Scientific Satellite Platform for Rapid Investigation and Test-A (SPRINT-A) satellite, which will be launched on the Epsilon launch vehicle in 2013. Utilizing the capacitor-like voltage behavior of LICs, we will employ a simple constant-power charging circuit without feedback control.

  11. Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence

    Energy Technology Data Exchange (ETDEWEB)

    Sriprapha, K.; Piromjit, C.; Limmanee, A.; Sritharathikhun, J. [Institute of Solar Energy Technology Development (SOLARTEC), National Science and Technology Development Agency (NSTDA), 111 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120 (Thailand)

    2011-01-15

    We have developed thin film silicon double-junction solar cells by using micromorph structure. Wide bandgap hydrogenated amorphous silicon oxide (a-SiO:H) film was used as an absorber layer of top cell in order to obtain solar cells with high open circuit voltage (V{sub oc}), which are attractive for the use in high temperature environment. All p, i and n layers were deposited on transparent conductive oxide (TCO) coated glass substrate by a 60 MHz-very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. The p-i-n-p-i-n double-junction solar cells were fabricated by varying the CO{sub 2} and H{sub 2} flow rate of i top layer in order to obtain the wide bandgap with good quality material, which deposited near the phase boundary between a-SiO:H and hydrogenated microcrystalline silicon oxide ({mu}c-SiO:H), where the high V{sub oc} can be expected. The typical a-SiO:H/{mu}c-Si:H solar cell showed the highest initial cell efficiency of 10.5%. The temperature coefficient (TC) of solar cells indicated that the values of TC for conversion efficiency ({eta}) of the double-junction solar cells were inversely proportional to the initial V{sub oc}, which corresponds to the bandgap of the top cells. The TC for {eta} of typical a-SiO:H/{mu}c-Si:H was -0.32%/ C, lower than the value of conventional a-Si:H/{mu}c-Si:H solar cell. Both the a-SiO:H/{mu}c-Si:H solar cell and the conventional solar cell showed the same light induced degradation ratio of about 20%. We concluded that the solar cells using wide bandgap a-SiO:H film in the top cells are promising for the use in high temperature regions. (author)

  12. Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

    International Nuclear Information System (INIS)

    Highlights: • Substrate structure of spray pyrolyzed CuInS2/In2S3 heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS2 based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS2/In2S3/ZnO/AZO–Ag–AZO was studied as a function of the In2S3 buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 106 times. Electrical measurements under illumination revealed that short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) of the Mo/CuInS2/In2S3/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In2S3 layer. The maximum Jsc of 9.20 mA/cm2, Voc of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In2S3 layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed thin film solar cells

  13. Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankir, Nurdan Demirci, E-mail: nsankir@etu.edu.tr; Aydin, Erkan; Ugur, Esma; Sankir, Mehmet

    2015-08-15

    Highlights: • Substrate structure of spray pyrolyzed CuInS{sub 2}/In{sub 2}S{sub 3} heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS{sub 2} based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO was studied as a function of the In{sub 2}S{sub 3} buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10{sup 6} times. Electrical measurements under illumination revealed that short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), fill factor (FF) and efficiency (η) of the Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In{sub 2}S{sub 3} layer. The maximum J{sub sc} of 9.20 mA/cm{sup 2}, V{sub oc} of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In{sub 2}S{sub 3} layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed

  14. Growth of polycrystalline CdS and CdTe thin layers for high efficiency thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, N.; Bosio, A.; Tedeschi, R.; Canevari, V. [Parma Univ. (Italy). Dipartimento di Fisica

    2000-10-16

    Recently, conversion efficiencies close to 16% for thin film solar cells based on the CdS/CdTe heterojunction have been reported. These relevant results, however, have not yet solved the problems which arise when industrial production is undertaken as the demand for low cost imposes constraints which considerably limit the final efficiency of the cells. In this paper, we will show that very high conversion efficiencies can still be achieved even making use of low cost soda-lime glass as substrate. In fact, the Na contained in this kind of glass diffuses during the fabrication of the cell into the active layers of the device causing a substantial decrease of the fill factor and consequently of the efficiency of the cell. In particular, we will describe the methods and the magnetron sputtering techniques used to grow a polycrystalline CdS thin film with a controlled Na content. We will also describe the details of the growth via the close-spaced sublimation (CSS) technique of the CdTe polycrystalline film, which are crucial for the heterojunction and the back contact which has been fabricated exploiting the characteristics of Sb{sub 2}Te{sub 3} which is a low gap p-type semiconductor with a high conductivity. (orig.)

  15. Easily accessible polymer additives for tuning the crystal-growth of perovskite thin-films for highly efficient solar cells

    Science.gov (United States)

    Dong, Qingqing; Wang, Zhaowei; Zhang, Kaicheng; Yu, Hao; Huang, Peng; Liu, Xiaodong; Zhou, Yi; Chen, Ning; Song, Bo

    2016-03-01

    For perovskite solar cells (Pero-SCs), one of the key issues with respect to the power conversion efficiency (PCE) is the morphology control of the perovskite thin-films. In this study, an easily-accessible additive polyethylenimine (PEI) is utilized to tune the morphology of CH3NH3PbI3-xClx. With addition of 1.00 wt% of PEI, the smoothness and crystallinity of the perovskite were greatly improved, which were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). A summit PCE of 14.07% was achieved for the p-i-n type Pero-SC, indicating a 26% increase compared to those of the devices without the additive. Both photoluminescence (PL) and alternating current impedance spectroscopy (ACIS) analyses confirm the efficiency results after the addition of PEI. This study provides a low-cost polymer additive candidate for tuning the morphology of perovskite thin-films, and might be a new clue for the mass production of Pero-SCs.For perovskite solar cells (Pero-SCs), one of the key issues with respect to the power conversion efficiency (PCE) is the morphology control of the perovskite thin-films. In this study, an easily-accessible additive polyethylenimine (PEI) is utilized to tune the morphology of CH3NH3PbI3-xClx. With addition of 1.00 wt% of PEI, the smoothness and crystallinity of the perovskite were greatly improved, which were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). A summit PCE of 14.07% was achieved for the p-i-n type Pero-SC, indicating a 26% increase compared to those of the devices without the additive. Both photoluminescence (PL) and alternating current impedance spectroscopy (ACIS) analyses confirm the efficiency results after the addition of PEI. This study provides a low-cost polymer additive candidate for tuning the morphology of perovskite thin-films, and might be a new clue for the mass production of Pero-SCs. Electronic supplementary information (ESI) available: J-V curves & characteristics

  16. Evaluation of back contact in spray deposited SnS thin film solar cells by impedance analysis.

    Science.gov (United States)

    Patel, Malkeshkumar; Ray, Abhijit

    2014-07-01

    The role of back metal (M) contact in sprayed SnS thin film solar cells with a configuration Glass/F:SnO2/In2S3/SnS/M (M = Graphite, Cu, Mo, and Ni) was analyzed and discussed in the present study. Impedance spectroscopy was employed by incorporating constant phase elements (CPE) in the equivalent circuit to investigate the degree of inhomogeneity associated with the heterojunction and M/SnS interfaces. A best fit to Nyquist plot revealed a CPE exponent close to unity for thermally evaporated Cu, making it an ideal back contact. The Bode phase plot also exhibited a higher degree of disorders associated with other M/SnS interfaces. The evaluation scheme is useful for other emerging solar cells developed from low cost processing schemes like spray deposition, spin coating, slurry casting, electrodeposition, etc. PMID:24882468

  17. Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

    Science.gov (United States)

    Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

    2015-09-14

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

  18. Pulsed electrically detected magnetic resonance study of spin relaxation and recombination in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fehr, Matthias; Behrends, Jan; Schnegg, Alexander; Lips, Klaus; Rech, Bernd [Helmholtz-Zentrum Berlin, Silizium Photovoltaik, Berlin (Germany); Astakhov, Oleksander; Finger, Friedhelm [Forschungszentrum Juelich (Germany). IEF-5 Photovoltaik

    2009-07-01

    We have investigated the influence of paramagnetic states on electronic transport processes in thin-film pin solar cells with pulsed Electrically Detected Magnetic Resonance (pEDMR) at X-Band frequency and low temperature (10 K). The solar cells consist of an intrinsic microcrystalline absorber layer and amorphous or microcrystalline n/p contacting layers. In addition to the identification of the participating paramagnetic centres by their g-factors, pEDMR can be used to study the dynamics of the electronic processes in detail. We present measurements of modified EPR pulse sequences in order to identify the dominating relaxation mechanisms within correlated solid-state spin-pairs. By this technique a monitoring of the spin and charge motion is possible. In the outlook we present measurements of the electron spin echo envelope and critically discuss modulations in terms of dipolar coupling within the spin-pairs or hyperfine couplings to surrounding nuclei.

  19. Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young; Friske, Theresa J.; Sun, Sam-S.; Zhang, Cheng; Choi, S.; Ledbetter, Abram; Seo, Kang; Bonner, Carl E.; Banger, Kulbinder K.; Castro, Stephanie L.; Rauh, David

    2007-01-01

    The development of hybrid inorganic/organic thin-film solar cells on flexible, lightweight, space-qualified, durable substrates provides an attractive solution for fabricating solar arrays with high mass specific power (W/kg). Next generation thin-film technologies may well involve a revolutionary change in materials to organic-based devices. The high-volume, low-cost fabrication potential of organic cells will allow for square miles of solar cell production at one-tenth the cost of conventional inorganic materials. Plastic solar cells take a minimum of storage space and can be inflated or unrolled for deployment. We will explore a cross-section of in-house and sponsored research efforts that aim to provide new hybrid technologies that include both inorganic and polymer materials as active and substrate materials. Research at University of Texas at Arlington focuses on the fabrication and use of poly(isothianaphthene-3,6-diyl) in solar cells. We describe efforts at Norfolk State University to design, synthesize and characterize block copolymers. A collaborative team between EIC Laboratories, Inc. and the University of Florida is investigating multijunction polymer solar cells to more effectively utilize solar radiation. The National Aeronautics and Space Administration (NASA)/Ohio Aerospace Institute (OAI) group has undertaken a thermal analysis of potential metallized substrates as well as production of nanoparticles of CuInS2 and CuInSe2 in good yield at moderate temperatures via decomposition of single-source precursors. Finally, preliminary work at the Rochester Institute of Technology (R.I.T.) to assess the impact on performance of solar cells of temperature and carbon nanotubes is reported. Technologies that must be developed to enable ultra-lightweight solar arrays include: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. For NASA applications, any solar cell or array technology must not only meet

  20. Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance

    Science.gov (United States)

    Courel, Maykel; Andrade-Arvizu, J. A.; Vigil-Galán, O.

    2015-09-01

    One of the most important issues in kesterite Cu2ZnSnS4 (CZTS)-based thin film solar cells is low open circuit voltage, which is mainly related to loss mechanisms that take place in both CZTS bulk material and CdS/CZTS interface. A device model for CZTS/CdS solar cell which takes into account loss mechanisms influence on solar cell performance is presented. The simulation results showed that our model is able to reproduce experimental observations reported for CZTS/CdS-based solar cells with the highest conversion efficiencies, measured under room temperature and AM1.5 intensity. The comparison of simulation results to experimental observations demonstrated that among the different loss mechanisms, trap-assisted tunneling losses are the major hurdle to boost open circuit voltage. Under this loss mechanism, a solar cell efficiency enhancement up to 10.2% with CdS donor concentration decrease was reached. Finally, the possible path toward a further solar cell efficiency improvement is discussed.

  1. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Cd1−xZnxS and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd1−xZnxS coatings were applied onto 15 × 15 cm2 float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd0.36Zn0.64S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd0.36Zn0.64S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd0.36Zn0.64S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells

  2. Photoelectrode thin film of dye-sensitized solar cell fabricated by anodizing method and spin coating and electrochemical impedance properties of DSSC

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Ho, E-mail: f10381@ntut.edu.tw [Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan (China); Chen, Chih-Hao [Department of Thoracic Surgery, Mackay Memorial Hospital, Taipei 10419, Taiwan (China); Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan (China); Kao, Mu-Jung [Department of Vehicle Engineering, National Taipei University of Technology, Taipei 10608, Taiwan (China); Chien, Shu-Hua [Institute of Chemistry, Academia Sinica, Taipei 115, Taiwan (China); Chou, Cheng-Yi [Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan (China)

    2013-06-15

    The paper studies the photoelectrode thin film of dye-sensitized solar cell (DSSC) fabricated by anodizing method, explores the structure and properties of the fabricated photoelectrode thin film, measures the photoelectric conversion efficiency of DSSC, and finds the electrochemical impedance properties of DSSCs assembled by photoelectrode thin films in different thicknesses. Besides, in order to increase the specific surface area of nanotubes, this paper deposits TiO{sub 2} nanoparticles (TNP) on the surface of titanium oxide nanotube (TNT). As shown in experimental results, the photoelectric conversion efficiency of the DSSC fabricated by the study rises to 6.5% from the original 5.43% without TnB treatment, with an increase of photoelectric conversion efficiency by 19.7%. In addition, when the photoelectrode thin film is fabricated with mixture of TNTs and TNP in an optimal proportion of 2:8 and the photoelectrode thin film thickness is 15.5 μm, the photoelectric conversion efficiency can reach 7.4%, with an increase of 36.7% from the original photoelectric conversion efficiency at 5.43%. Besides, as found in the results of electrochemical impedance analysis, the DSSC with photoelectrode thin film thickness at 15.5 μm has the lowest charge-conduction resistance (R{sub k}) value 9.276 Ω of recombined electron and conduction resistance (R{sub w}) value 3.25 Ω of electrons in TiO{sub 2}.

  3. Quantitative analysis of spatially resolved electroluminescence of Cu(In,Ga)Se2 and a-Si:H thin-film solar cells and modules0

    OpenAIRE

    Tran, Thi-Minh-Hang

    2015-01-01

    Electroluminescence (EL) is the reciprocal process of the standard operational mode of a solar cell. EL imaging technique allows a fast detection of defects in solar cells and modules with low noise and high resolution. Recently, EL has become one of the most commonly used characterization tools for photovoltaic devices. There has been a significant amount of research into the interpretation and analysis of EL of silicon wafers, solar cells and modules, but very little, to date, on thin-film ...

  4. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  5. Broadband photocurrent enhancement and light-trapping in thin film Si solar cells with periodic Al nanoparticle arrays on the front

    DEFF Research Database (Denmark)

    Uhrenfeldt, Christian; Villesen, Thorbjørn Falk; Tetu, Amelie;

    2015-01-01

    on the front of a thin film Si test solar cell. It is demonstrated that the resonances from the Al nanoparticle array cause a broadband photocurrent enhancement ranging from the ultraviolet to the infrared with respect to a reference cell. From the experimental results as well as from numerical simulations...

  6. Determination of optical and mechanical properties of Nb{sub 2}O{sub 5} thin films for solar cells application

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, M. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wrocław (Poland); Szymańska, M., E-mail: magdalena.szymanska@its.waw.pl [Centre for Material Testing and Mechatronics, Motor Transport Institute, Jagiellonska 80, Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw (Poland); Kaczmarek, D. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wrocław (Poland); Kalisz, M. [Centre for Material Testing and Mechatronics, Motor Transport Institute, Jagiellonska 80, Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw (Poland); Wojcieszak, D.; Domaradzki, J. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wrocław (Poland); Placido, F. [University of the West of Scotland, High Street, Paisley, PA1 2BE, and SUPA, Scottish Universities Physics Alliance (United Kingdom)

    2014-05-01

    Highlights: • Niobium pentoxide films were prepared by microwave assisted magnetron sputtering. • Optical and mechanical properties of Nb{sub 2}O{sub 5} thin films were investigated. • The surface of thin films was homogenous, crack free and exhibited low RMS roughness. • Prepared Nb{sub 2}O{sub 5} coatings were well transparent from ca., 350 nm. • Hardness of deposited coatings was ca., 7 GPa. - Abstract: In this paper investigation results of niobium pentoxide thin films deposited by microwave assisted reactive magnetron sputtering process were described. Surface of prepared coatings was examined with the aid of atomic force microscope (AFM) operating in the contact-mode and in ultra high vacuum conditions. The surface of thin films was homogenous, crack free and exhibit low root mean square (RMS) roughness of about 0.34 nm. X-ray photoelectron spectroscopy (XPS) studies were performed to determine the chemical states of the niobium at the surface of thin films. Contact angle and surface free energy were additionally investigated to examine the surface properties of the deposited coatings. Optical properties of the Nb{sub 2}O{sub 5} thin films showed, that prepared coatings were well transparent from 350 nm to longer wavelength range. Based on transmission and reflection measurements the values of refractive index and extinction coefficient were determined. The antireflective coating based on Nb{sub 2}O{sub 5} thin films for solar cells application was proposed. The hardness and Young's modulus measurements were performed by the nanoindentation technique. These investigations revealed that the hardness of the deposited coatings was ca., 7 GPa. Also scratch tests were applied, which have shown that the Nb{sub 2}O{sub 5} thin films were scratch resistant.

  7. CIGS Thin Film Solar Cells, phase 2 Uppsala University Final report 2006-01-01 - 2007-06-14

    Energy Technology Data Exchange (ETDEWEB)

    Edoff, Marika (Thin Film Solar Cell group, Dep. Technical Sciences, Uppsala Univ., P.O. Box 534, SE-751 21 Uppsala (Sweden)) (and others)

    2007-06-15

    The project CIGS Thin Film Solar Cells, phase 2 has been going on for 18,5 months and was interrupted in advance on the 14th of June, 2007. The decision to shorten the period was taken by the board of the Swedish Energy Agency the 14th of February. It was decided to reevaluate and re-direct the financial support to the group. A new project, CIGS Thin Film Solar Cells, phase 3, superseded this project and will go on for the initially planned project period (until 2009-12-31). During the project much of the focus has been on research on Cd-free buffer layers, with an emphasis on the interface properties between the CIGS and the buffer layer. (CIGS is a commonly used acronym for Cu(In,Ga)Se{sub 2}, which is the active absorption layer in this type of solar cells) The combination of high quality CIGS and the new buffer layers has been another field of interest. CIGS solar cell module development and computer modelling of solar cells and modules has been the third major research area. The results show that the group still holds a position as one of the leaders in the world in this field. The 18.5 % efficient Cd-free solar cell, which was obtained and independently confirmed is only one percent away from the world record and in addition it is Cd-free using a Zn(O,S) buffer layer (the world record from NREL contains Cd). By alloying ZnO with MgO instead of ZnS almost equally good results can be achieved. During the last half year an 18.1 % cell has been measured with a (Zn,Mg)O buffer layer. Solar cell module technology includes several research issues, both fundamental as e.g. modelling of cell voltage and losses as a function of distance from interconnect to interconnect, but also more development as e.g. encapsulation routines. The harsh environment test (damp heat test) run at 85 deg C and 85 % relative humidity for 1000 hours was passed for both a small (12.5x12.5 cm2) and a large (27.5x30 cm2) module within the degradation limits stated by the IEC standards, using

  8. New diarylmethanofullerene derivatives and their properties for organic thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Daisuke Sukeguchi

    2009-02-01

    Full Text Available A number of diarylmethanofullerene derivatives were synthesized. The cyclopropane ring of the derivatives has two aryl groups substituted with electron-withdrawing and -donating groups, the latter with long alkyl chains to improve solubility in organic solvents, an important property in processing cells. First reduction potentials of most derivatives were less negative than that of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM, which is possibly ascribed to their electron-withdrawing nature. Organic thin-film photovoltaic cells fabricated with poly(3-hexylthiophene (P3HT as the electron-donor and diarylmethanofullerene derivatives as the electron-acceptor material were examined. The {(methoxycarbonylphenyl[bis(octyloxyphenyl]methano}fullerene showed power conversion efficiency as high as PCBM, but had higher solubility in a variety of organic solvents than PCBM. The Voc value was higher than that of PCBM, which is derived from the electron-donating (octyloxyphenyl group, possibly raising the LUMO level. Photovoltaic effects of the devices fabricated with the derivatives having some electron-withdrawing groups were also examined.

  9. Characterization of thin film CdS-CdTe solar cells. [CDS-CDTE

    Energy Technology Data Exchange (ETDEWEB)

    Singh, V.P.; Brafman, H.; Makwana, J. (Texas Univ., El Paso (USA). Dept. of Electrical Engineering); McClure, J.C. (Texas Univ., El Paso, TX (USA). Metallurgical and Materials Engineering Dept.)

    1991-02-01

    Current-voltage, junction capacitance and optical characteristics of thin film CdS-CdTe cells on sprayed CdS films were measured. These characteristics have some interesting features such as reversal of the polarity of the a.c. short-circuit current and the a.c. open-circuit voltage when a large forward bias is applied across the cell. The reverse saturation current density j{sub 0} increases from 5.9x10{sup -9} A cm{sup -2} in the dark to 18.1x10{sup -6} A cm{sup -2} under '1 sun' illumination. Diode ideality factors are higher than 2.0 and the slope {alpha} of log I vs. V curve is almost temperature independent. The zero-bias depletion layer width is 1.9 {mu}m. The experimental results are interpreted by a model which proposes a highly compensated layer in CdTe and a high space charge layer in CdTe next to the CdS-CdTe interface. The origin of the high space charge layer is thought to be the ionization of a deep trap level at energy E{sub T} below the conduction band edge. For our calculations, we have used E{sub T}=0.45 eV. (orig.).

  10. Research Progress on a- Si:H Thin Film Solar Cells%非晶硅薄膜太阳能电池研究进展

    Institute of Scientific and Technical Information of China (English)

    尹炳坤; 蒋芳

    2012-01-01

    介绍了非晶硅薄膜太阳能电池的发展现状及制约非晶硅薄膜太阳能发展的两个关键性因素:转化效率低、光致衰减。对近年来提高非晶硅薄膜太阳能转化效率的新技术和非晶硅薄膜太阳能电池光致衰减的特性及模型进行综叙;重点阐述窗口层材料、中间层、叠层电池等提高非晶硅薄膜太阳能电池转化效率的新技术。文章最后对非晶硅膜太阳能电池未来的发展趋势进行了展望。%The research progress on a - Si thin film solar cells and two key factors restricting the development of a - Si : H thin film solar: low transformation efficiency and light - induced degradation test were introduced. The new tech- nique to improve transformation efficiency on a - Si : H thin film solar cells and both characteristics and model of light - induced degradation test of a - Si: H thin film solar were reviewed. Window layer materiaels, intermediate layer, light trapping structure and other all new technologies to improve the transformation efficiency of a - Si : H thin film solar were emphased on. The development trend of a - Si : H thin film solar cells was predicted.

  11. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  12. 3D-printed concentrator arrays for external light trapping on thin film solar cells

    NARCIS (Netherlands)

    van Dijk, Lourens; Marcus, E. A. Pepijn; Oostra, A. Jolt; Schropp, Ruud E. I.; Di Vece, Marcel

    2015-01-01

    After our recent demonstration of a 3D-printed external light trap on a small solar cell, we now consider its potential for large solar panels. An external light trap consists of a parabolic concentrator and a spacer that redirects the photons that are reflected by the solar cell back towards the so

  13. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  14. Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, J., E-mail: jerome.steinhauser@oerlikon.com; Boucher, J.-F.; Omnes, E.; Borrello, D.; Vallat-Sauvain, E.; Monteduro, G.; Marmelo, M.; Orhan, J.-B.; Wolf, B.; Bailat, J.; Benagli, S.; Meier, J.; Kroll, U.

    2011-12-01

    Compared to zinc oxide grown (ZnO) on flat glass, rough etched glass substrates decrease the sheet resistance (R{sub sq}) of zinc oxide layers grown on it. We explain this R{sub sq} reduction from a higher thickness and an improved electron mobility for ZnO layers deposited on rough etched glass substrates. When using this etched glass substrate, we also obtain a large variety of surface texture by changing the thickness of the ZnO layer grown on it. This new combination of etched glass and ZnO layer shows improved light trapping potential compared to ZnO films grown on flat glass. With this new approach, Micromorph thin film silicon tandem solar cells with high total current densities (sum of the top and bottom cell current density) of up to 26.8 mA cm{sup -2} were fabricated.

  15. Cadmium sulfide nanowires for the window semiconductor layer in thin film CdS-CdTe solar cells

    International Nuclear Information System (INIS)

    Thin film CdS/CdTe heterojunction device is a leading technology for the solar cells of the next generation. We report on two novel device configurations for these cells where the traditional CdS window layer is replaced by nanowires (NW) of CdS, embedded in an aluminum oxide matrix or free-standing. An estimated 26.8% improvement in power conversion efficiency over the traditional device structure is expected, primarily because of the enhanced spectral transmission of sunlight through the NW-CdS layer and a reduction in the junction area/optical area ratio. In initial experiments, nanostructured devices of the two designs were fabricated and a power conversion efficiency value of 6.5% was achieved.

  16. Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

    Directory of Open Access Journals (Sweden)

    Moulin Etienne

    2015-01-01

    Full Text Available The optical and electrical properties of transparent conductive oxides (TCOs, traditionally used in thin-film silicon (TF-Si solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-μm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

  17. Cu2ZnSnS4 thin films solar cells: material and device characterization

    OpenAIRE

    Malerba, Claudia

    2014-01-01

    Cu2ZnSnS4 (CZTS) quaternary compound has attracted much attention in the last years as new abundant, low cost and non-toxic material, with desirable properties for thin film photovoltaic (PV) applications. In this work, CZTS thin films were grown using two different processes, based on vacuum deposition of precursors, followed by a heat treatment in sulphur atmosphere. The precursors were deposited using two different approaches: (i) electron-beam evaporation of multiple stacks made of ZnS, S...

  18. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  19. Characterization of the Organic Thin Film Solar Cells with Active Layers of PTB7/PC71BM Prepared by Using Solvent Mixtures with Different Additives

    Directory of Open Access Journals (Sweden)

    Masakazu Ito

    2014-01-01

    Full Text Available Organic thin film solar cells (OTFSCs were fabricated with blended active layers of poly[[4,8-bis[(2-ethylhexyloxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexylcarbonyl]thieno[3,4-b]thiophenediyl

  20. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  1. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.;

    2011-01-01

    The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through the crea...

  2. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    A.D. Verkerk; M.M. de Jong; J.K. Rath; M. Brinza; R.E.I. Schropp; W.J. Goedheer; V.V. Krzhizhanovskaya; Y.E. Gorbachev; K.E. Orlov; E.M. Khilkevitch; A.S. Smirnov

    2008-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by l

  3. Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Hoque, Md Nadim Ferdous; Yang, Mengjin; Li, Zhen; Islam, Nazifah; Pan, Xuan; Zhu, Kai; Fan, Zhaoyang

    2016-07-08

    Researchers have debated whether methylammonium lead iodide (MAPbI3), with a perovskite crystal structure, is ferroelectric and therefore contributes to the current--voltage hysteresis commonly observed in hybrid perovskite solar cells (PSCs). We thoroughly investigated temperature-dependent polarization, dielectric, and impedance spectroscopies, and we found no evidence of ferroelectric effect in a MAPbI3 thin film at normal operating conditions. Therefore, the effect does not contribute to the hysteresis in PSCs, whereas the large component of ionic migration observed may play a critical role. Our temperature-based polarization and dielectric studies find that MAPbI3 exhibits different electrical behaviors below and above ca. 45 degrees C, suggesting a phase transition around this temperature. In particular, we report the activation energies of ionic migration for the two phases and temperature-dependent permittivity of MAPbI3. This study contributes to the understanding of the material properties and device performance of hybrid perovskites.

  4. Performance enhancement of thin film silicon solar cells based on distributed Bragg reflector & diffraction grating

    Directory of Open Access Journals (Sweden)

    R. S. Dubey

    2014-12-01

    Full Text Available The influence of various designing parameters were investigated and explored for high performance solar cells. Single layer grating based solar cell of 50 μm thickness gives maximum efficiency up to 24 % whereas same efficiency is achieved with the use of three bilayers grating based solar cell of 30 μm thickness. Remarkably, bilayer grating based solar cell design not only gives broadband absorption but also enhancement in efficiency with reduced cell thickness requirement. This absorption enhancement is attributed to the high reflection and diffraction from DBR and grating respectively. The obtained short-circuit current were 29.6, 32.9, 34.6 and 36.05 mA/cm2 of 5, 10, 20 and 30 μm cell thicknesses respectively. These presented designing efforts would be helpful to design and realize new generation of solar cells.

  5. Performance enhancement of thin film silicon solar cells based on distributed Bragg reflector and diffraction grating

    Energy Technology Data Exchange (ETDEWEB)

    Dubey, R. S.; Saravanan, S. [Advanced Research Laboratory for Nanomaterials and Devices, Department of Nanotechnology, Swarnandhra College of Engineering and Technology, Seetharampuram, Narsapur (A.P.) (India); Kalainathan, S. [School of Advanced Sciences, VIT University, Vellore, (T.N.) (India)

    2014-12-15

    The influence of various designing parameters were investigated and explored for high performance solar cells. Single layer grating based solar cell of 50 μm thickness gives maximum efficiency up to 24 % whereas same efficiency is achieved with the use of three bilayers grating based solar cell of 30 μm thickness. Remarkably, bilayer grating based solar cell design not only gives broadband absorption but also enhancement in efficiency with reduced cell thickness requirement. This absorption enhancement is attributed to the high reflection and diffraction from DBR and grating respectively. The obtained short-circuit current were 29.6, 32.9, 34.6 and 36.05 mA/cm{sup 2} of 5, 10, 20 and 30 μm cell thicknesses respectively. These presented designing efforts would be helpful to design and realize new generation of solar cells.

  6. In-situ transmission measurements as process control for thin-film silicon solar cells

    NARCIS (Netherlands)

    Meier, M.; Muthmann, S.; Flikweert, A. J.; Dingemans, G.; M. C. M. van de Sanden,; Gordijn, A.

    2011-01-01

    In this work, in-situ transmission measurements using plasma as light source are presented for the determination of growth rate and crystallinity during silicon thin-film growth. The intensity of distinct plasma emission lines was measured at the backside of the transparent substrates on which silic

  7. Thin films of absorber material Cu2ZnSnS4 for solar cells

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Ettlinger, Rebecca Bolt; Schou, Jørgen

    2014-01-01

    Pulsed Laser Deposition technique is applied to the production of thin films of CZTS (Cu2ZnSnS4).This vacuum technique has proven to be particularly successful in the production of films with acomplex stoichiometry, as in the case of high temperature superconductors. The material ablated bythe...

  8. Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target

    OpenAIRE

    Min Xie; Daming Zhuang; Ming Zhao; Zuolong Zhuang; Liangqi Ouyang; Xiaolong Li; Jun Song

    2013-01-01

    CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of...

  9. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    OpenAIRE

    Alaa Ayad Al-mebir; Paul Harrison; Ali Kadhim; Guanggen Zeng; Judy Wu

    2016-01-01

    An in situ thermal annealing process (iTAP) has been introduced before the common ex situ cadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing w...

  10. The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

    International Nuclear Information System (INIS)

    Highlights: • (Ag,Cu)2ZnSnS4 thin film was synthesized through metallic stacking layers. • Ag incorporation reduces the size and amount of voids at back contact. • Less planar defects and Cu vacancy are formed in the (Ag,Cu)2ZnSnS4. • Solar cell performance was improved with Ag incorporation. - Abstract: Recently, Ag incorporation into Cu(In,Ga)Se2 structure was found to benefit the solar cell performance. However, (Ag,Cu)2ZnSnS4 used as the solar cell absorber is not widely reported even though Ag2ZnSnS4 has shown much better photocatalysts activity for H2 evolution than Cu2ZnSnS4. In this paper, (Ag,Cu)2ZnSnS4 thin film solar cell was synthesized through sulfurization of Ag/Zn/Cu/Sn metallic stacked layers. In order to understand the actual role of Ag in the Cu2ZnSnS4 structure, the changing chemical environment, microstructure and intragrain defect due to the Ag incorporation, were studied by X-ray photoelectron spectroscopy and transmission electron microscopy. After sulfurization, Ag is uniformly distributed in the absorber and is incorporated into Cu2ZnSnS4 crystal structure but no obvious change of the Cu2ZnSnS4 chemical environment is detected. A large density of voids is formed at the Cu2ZnSnS4/Mo interface and some of these voids are found to be coated with CdS which is believed to be detrimental to Cu2ZnSnS4 device performance. In contrast, Ag incorporation reduces the size and amount of voids and thus effectively eliminates CdS deposited at back contact region. Moreover, fewer planar defects and Cu vacancies are formed in the (Ag,Cu)2ZnSnS4 sample than Cu2ZnSnS4 sample as suggested by electron diffraction patterns. Therefore, improved solar cell performance should result from the formation of (Ag,Cu)2ZnSnS4 structure

  11. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  12. Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

    Science.gov (United States)

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander, III; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig; Lin, John K.; Scarborough, Stephen E.

    2005-01-01

    Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

  13. Controlling the texture and crystallinity of evaporated lead phthalocyanine thin films for near-infrared sensitive solar cells.

    Science.gov (United States)

    Vasseur, Karolien; Broch, Katharina; Ayzner, Alexander L; Rand, Barry P; Cheyns, David; Frank, Christian; Schreiber, Frank; Toney, Michael F; Froyen, Ludo; Heremans, Paul

    2013-09-11

    To achieve organic solar cells with a broadened spectral absorption, we aim to promote the growth of the near-infrared (NIR)-active polymorph of lead phthalocyanine (PbPc) on a relevant electrode for solar cell applications. We studied the effect of different substrate modification layers on PbPc thin film structure as a function of thickness and deposition rate (rdep). We characterized crystallinity and orientation by grazing incidence X-ray diffraction (GIXD) and in situ X-ray reflectivity (XRR) and correlated these data to the performance of bilayer solar cells. When deposited onto a self-assembled monolayer (SAM) or a molybdenum oxide (MoO3) buffer layer, the crystallinity of the PbPc films improves with thickness. The transition from a partially crystalline layer close to the substrate to a more crystalline film with a higher content of the NIR-active phase is enhanced at low rdep, thereby leading to solar cells that exhibit a higher maximum in short circuit current density (JSC) for thinner donor layers. The insertion of a CuI layer induces the formation of strongly textured, crystalline PbPc layers with a vertically homogeneous structure. Solar cells based on these templated donor layers show a variation of JSC with thickness that is independent of rdep. Consequently, without decreasing rdep we could achieve JSC=10 mA/cm2, yielding a bilayer solar cell with a peak external quantum efficiency (EQE) of 35% at 900 nm, and an overall power conversion efficiency (PCE) of 2.9%.

  14. Flexible Cu(In,Ga)Se2 thin-film solar cells%柔性铜铟镓硒薄膜太阳电池

    Institute of Scientific and Technical Information of China (English)

    闫礼; 乔在祥

    2011-01-01

    The general structure and researching status of flexible Cu (In,Ga)Se2 (CIGS) thin-film solar cells was described.The crucial technologies and challenges in the development of flexible CIGS solar cells were also involved.%介绍了柔性铜铟镓硒薄膜太阳电池的基本结构、研究现况、关键技术,同时指出了未来面临的挑战.

  15. Efficient water-splitting device based on a bismuth vanadate photoanode and thin-film silicon solar cells.

    Science.gov (United States)

    Han, Lihao; Abdi, Fatwa F; van de Krol, Roel; Liu, Rui; Huang, Zhuangqun; Lewerenz, Hans-Joachim; Dam, Bernard; Zeman, Miro; Smets, Arno H M

    2014-10-01

    A hybrid photovoltaic/photoelectrochemical (PV/PEC) water-splitting device with a benchmark solar-to-hydrogen conversion efficiency of 5.2% under simulated air mass (AM) 1.5 illumination is reported. This cell consists of a gradient-doped tungsten-bismuth vanadate (W:BiVO4 ) photoanode and a thin-film silicon solar cell. The improvement with respect to an earlier cell that also used gradient-doped W:BiVO4 has been achieved by simultaneously introducing a textured substrate to enhance light trapping in the BiVO4 photoanode and further optimization of the W gradient doping profile in the photoanode. Various PV cells have been studied in combination with this BiVO4 photoanode, such as an amorphous silicon (a-Si:H) single junction, an a-Si:H/a-Si:H double junction, and an a-Si:H/nanocrystalline silicon (nc-Si:H) micromorph junction. The highest conversion efficiency, which is also the record efficiency for metal oxide based water-splitting devices, is reached for a tandem system consisting of the optimized W:BiVO4 photoanode and the micromorph (a-Si:H/nc-Si:H) cell. This record efficiency is attributed to the increased performance of the BiVO4 photoanode, which is the limiting factor in this hybrid PEC/PV device, as well as better spectral matching between BiVO4 and the nc-Si:H cell. PMID:25138735

  16. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  17. Compositional and Interfacial Modification of Cu2 ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition.

    Science.gov (United States)

    Seo, Se Won; Jeon, Jong-Ok; Seo, Jung Woo; Yu, Yi Yin; Jeong, Jeung-Hyun; Lee, Doh-Kwon; Kim, Honggon; Ko, Min Jae; Son, Hae Jung; Jang, Ho Won; Kim, Jin Young

    2016-03-01

    A highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe)-based thin-film solar cell (9.9%) was prepared using an electrochemical deposition method followed by thermal annealing. The Cu-Zn-Sn alloy films was grown on a Mo-coated glass substrate using a one-pot electrochemical deposition process, and the metallic precursor films was annealed under a mixed atmosphere of S and Se to form CZTSSe thin films with bandgap energies ranging from 1.0 to 1.2 eV. The compositional modification of the S/(S+Se) ratio shows a trade-off effect between the photocurrent and photovoltage, resulting in an optimum bandgap of roughly 1.14 eV. In addition, the increased S content near the p-n junction reduces the dark current and interface recombination, resulting in a further enhancement of the open-circuit voltage. As a result of the compositional and interfacial modification, the best CZTSSe-based thin-film solar cell exhibits a conversion efficiency of 9.9%, which is among the highest efficiencies reported so far for electrochemically deposited CZTSSe-based thin-film solar cells. PMID:26822494

  18. A general water-based precursor solution approach to deposit earth abundant Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Yang, Yanchun; Kang, Xiaojiao; Huang, Lijian; Wei, Song; Pan, Daocheng

    2016-05-01

    Earth abundant Cu2ZnSn(S,Se)4 (CZTSSe) has been considered as one of the most promising thin film solar cell absorber candidates. Here, we develop a facile water-based precursor solution approach for depositing high-efficiency Cu2ZnSn(S,Se)4 thin film solar cells. In this environmentally friendly approach, inexpensive elemental Cu, Zn, Sn and S powders are used as the starting materials and are dissolved in the aqueous solution of thioglycolic acid and methylamine, forming a homogeneous precursor solution for depositing Cu2ZnSnS4 nanocrystal thin film. As-deposited CZTS nanocrystal thin films are selenized to form the large-grain CZTSSe absorber layers. It was found that Na doping plays an important role in the formation of the extremely dense and flat CZTSSe absorber layer, and fill factor can be significantly improved for Na-doped CZTSSe solar cells, which lead to a photoelectric conversion efficiency of 6.96% with an open-circuit voltage of 378 mV, a short current density of 28.17 mA cm-2, and a fill factor of 65.4%.

  19. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  20. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    Science.gov (United States)

    Bozzola, A.; Kowalczewski, P.; Andreani, L. C.

    2014-03-01

    Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10-80 μm, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100 cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

  1. Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla, Sweden and Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden); Sterner, Jan [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla (Sweden); Platzer-Björkman, Charlotte [Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)

    2015-11-15

    Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

  2. Comparative study on the annealing types on the properties of Cu2ZnSnS4 thin films and their application to solar cells

    Science.gov (United States)

    Hong, Chang Woo; Shin, Seung Wook; Gurav, K. V.; Vanalakar, S. A.; Yeo, Soo Jung; Yang, Han Seung; Yun, Jae Ho; Kim, Jin Hyeok

    2015-04-01

    Comparative studies on the properties of Cu2ZnSnS4 (CZTS) thin films and performance of CZTS thin film solar cells (TFSCs) prepared by different sulfurization types such as commerical furnace (CF) and rapid thermal annealing (RTA) systems have been investigated. The CZTS thin film prepared using CF showed the dense microstructure with many voids and secondary phases, while that prepared using RTA showed the dense microstructure without void and with some secondary phases. The RTA annealed CZTS TFSC have shown better performance than that prepared using CF. The best performance of CZTS TFSC using RTA was 1.9% efficiency (Voc: 505 mV, Jsc: 7.5 mA/cm2 and FF: 50.2%).

  3. Electrodeposition and Characterization of CulnSe2 Thin Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    LI Jianzhuang; ZHAO Xiujian; XIA Donglin

    2007-01-01

    CuInSe2 (CIS) thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass (SLG) substrates. A thermal processing in Se atmosphere at 450 ℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively. X-ray diffraction(XRD) studies show that the annealing in Se atmosphere at 450 ℃ promotes the structural formation of CIS chalcopyrite structure.

  4. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  5. Preparation of conjugated polymer-based composite thin film for application in solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yang-Yen, E-mail: yyyu@mail.mcut.edu.tw [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Center for Thin Film Technologies and Applications, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chien, Wen-Chen [Department of Chemical Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Ko, Yu-Hsin [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chen, Chih-Ping [Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Battery Research Center of Green Energy, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City 243, Taiwan (China); Chang, Chao-Ching [Department of Chemical and Materials Engineering, Tamkang University, 151, Yingzhuan Rd., Tamsui Dist., New Taipei City 25137, Taiwan (China)

    2015-06-01

    This paper reports on the enhanced cell efficiency of structures and properties of regioregular poly(3-hexylthiophene) (P3HT)/multiwalled carbon nanotube (MWNT) hybrid materials. The prepared hybrid materials were characterized using ultraviolet–visible absorption spectroscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Different concentrations of these MWNTs were suspended in polymer solutions and spin-cast onto indium tin oxide (ITO) glass. Solar cells with a device structure of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) /P3HT:MWNTs/aluminum were then produced using evaporated aluminum as the back contact. The results showed that the ratio of P3HT to MWNTs considerably influenced the performance of the fabricated solar cells. The efficiency of the solar cells increased with the ratio of carbon nanotubes. Monochromatic incident photon-to-electron conversion efficiency analysis was performed and the results indicated that at the optimal P3HT/MWNTs ratio (= 1/1), the solar cells demonstrated a high-quality conversion of 2.16% with a fill factor of 42.22%, an open circuit voltage of 0.56 V, and a short circuit current of 9.12 mA/cm{sup 2}. - Highlights: • Solar cells ITO/PEDOT:PSS(DMSO)/P3HT:MWNT/Al were fabricated. • Optimal ratio of P3HT to MWNT was investigated. • Solar cell with 2.16% efficiency was obtained.

  6. Preparation of conjugated polymer-based composite thin film for application in solar cell

    International Nuclear Information System (INIS)

    This paper reports on the enhanced cell efficiency of structures and properties of regioregular poly(3-hexylthiophene) (P3HT)/multiwalled carbon nanotube (MWNT) hybrid materials. The prepared hybrid materials were characterized using ultraviolet–visible absorption spectroscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Different concentrations of these MWNTs were suspended in polymer solutions and spin-cast onto indium tin oxide (ITO) glass. Solar cells with a device structure of ITO/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) /P3HT:MWNTs/aluminum were then produced using evaporated aluminum as the back contact. The results showed that the ratio of P3HT to MWNTs considerably influenced the performance of the fabricated solar cells. The efficiency of the solar cells increased with the ratio of carbon nanotubes. Monochromatic incident photon-to-electron conversion efficiency analysis was performed and the results indicated that at the optimal P3HT/MWNTs ratio (= 1/1), the solar cells demonstrated a high-quality conversion of 2.16% with a fill factor of 42.22%, an open circuit voltage of 0.56 V, and a short circuit current of 9.12 mA/cm2. - Highlights: • Solar cells ITO/PEDOT:PSS(DMSO)/P3HT:MWNT/Al were fabricated. • Optimal ratio of P3HT to MWNT was investigated. • Solar cell with 2.16% efficiency was obtained

  7. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  8. Light trapping in thin film solar cells using textured photonic crystal

    Science.gov (United States)

    Yi, Yasha; Kimerling, Lionel C.; Duan, Xiaoman; Zeng, Lirong

    2009-01-27

    A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

  9. Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

    Science.gov (United States)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-10-01

    Zinc sulfide (ZnS) thin films were prepared on indium tin oxide-coated glass by electrodeposition using aqueous zinc sulfate, thiourea, and ammonia solutions at 80°C. The effects of sulfurization at temperatures of 350°C, 400°C, 450°C, and 500°C on the morphological, structural, optical, and electrical properties of the ZnS thin films were investigated. X-ray diffraction analysis showed that the ZnS thin films exhibited cubic zincblende structure with preferred (111) orientation. The film crystallization improved with increasing annealing temperature. Field-emission scanning electron microscopy images showed that the film morphology became more compact and uniform with increasing annealing temperature. The percentage of sulfur in the ZnS thin films increased after sulfurization until a stoichiometric S/Zn ratio was achieved at 500°C. The annealed films showed good adhesion to the glass substrates, with moderate transmittance (85%) in the visible region. Based on absorption measurements, the direct bandgap increased from 3.71 eV to 3.79 eV with annealing temperature, which is attributed to the change of the buffer material composition and suitable crystal surface properties for effective p- n junction formation. The ZnS thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 1.86%.

  10. Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

    OpenAIRE

    Keya Zhou; Zhongyi Guo; Shutian Liu; Jung-Ho Lee

    2015-01-01

    Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the ma...

  11. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  12. Thin-film metal hydrides for solar energy applications

    OpenAIRE

    2012-01-01

    Thin-film metal hydrides may become important solar energy materials in the future. This thesis demonstrates interesting material properties of metal hydride films, relevant for applications as semiconducting materials for photovoltaic (PV) solar cells and for regulation of light using smart window technology. List of papers. Papers II-VI are removed from the thesis due to copyright restrictions. Paper I C. Platzer-Björkman, T. Mongstad, S. Zh. Karazhanov, J. P. Mæhlen, E. S. Marst...

  13. In-depth elemental characterization of Cu(In,Ga)Se{sub 2} thin film solar cells by means of RBS and PIXE techniques

    Energy Technology Data Exchange (ETDEWEB)

    Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laborarories, A-2444 Seibersdorf (Austria); Bogdanovic Radovic, I. [Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Streeck, C. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut Technologie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Kaufmann, C.; Caballero, R.; Rissom, T. [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Kanngießer, B. [Technische Universität Berlin, Institut für Optik und Atomare Physik, 10623 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

    2014-07-15

    Thin films based on Cu(In,Ga)Se{sub 2} are used as absorber cells in photovoltaic devices. In and Ga graded depth profiles are designed to optimize the solar cell performance. Simultaneous Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with 3 MeV {sup 4}He ions were used in conjunction to determine the depth profile of all the heavy elements in Cu(In,Ga)Se{sub 2} absorbers and complete solar cells. The RBS and PIXE data from one sample were analyzed synergistically, providing reliable depth profiles that satisfy all the data collected. An uncertainty analysis was done, probing the sensitivity of the analysis to different assumptions. The analytical possibilities of the combined RBS/PIXE alpha beam measurements of the CIGSe thin film solar cells, as well as the uncertainties induced in the quantitative methodology are discussed and critically assessed.

  14. Adequacy of the rigorous coupled-wave approach for thin-film silicon solar cells with periodically corrugated metallic backreflectors: spectral analysis.

    Science.gov (United States)

    Shuba, Mikhail V; Faryad, Muhammad; Solano, Manuel E; Monk, Peter B; Lakhtakia, Akhlesh

    2015-07-01

    The rigorous coupled-wave approach (RCWA) is extensively used to compute optical absorption and photon absorption in thin-film photovoltaic solar cells backed by 1D metallic gratings when the wave vector of the incident light lies wholly in the grating plane. The RCWA algorithm converges rapidly for incident s-polarized light over the entire 400-1100 nm solar spectrum. It also performs well for incident p-polarized light in the 400-650 nm spectral regime, but even with a large number of Floquet harmonics in the solution, the total reflectance is underestimated in the 650-1100 nm spectral regime. Despite that shortcoming, the RCWA underestimates the solar-spectrum-integrated photon absorption rate only by 5%-10% for p-polarized light. As sunlight is almost unpolarized, the RCWA should be considered adequate to design thin-film silicon solar cells with periodically corrugated metallic backreflectors. PMID:26367148

  15. Electrochemical deposition of molybdenum sulfide thin films on conductive plastic substrates as platinum-free flexible counter electrodes for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chao-Kuang; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

    2015-06-01

    In this study, pulsed electrochemical deposition (pulsed ECD) was used to deposit molybdenum sulfide (MoS{sub x}) thin films on indium tin oxide/polyethylene naphthalate (ITO/PEN) substrates as flexible counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). The surface morphologies and elemental distributions of the prepared MoS{sub x} thin films were examined using field-emission scanning electron microscope (FE-SEM) equipped with energy-dispersive X-ray spectroscopy. The chemical states and crystallinities of the prepared MoS{sub x} thin films were examined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The optical transmission (T (%)) properties of the prepared MoS{sub x} samples were determined by ultraviolet–visible spectrophotometry. Cyclic voltammetry (CV) and Tafel-polarization measurements were performed to analyze the electrochemical properties and catalytic activities of the thin films for redox reactions. The FE-SEM results showed that the MoS{sub x} thin films were deposited uniformly on the ITO/PEN flexible substrates via the pulsed ECD method. The CV and Tafel-polarization curve measurements demonstrated that the deposited MoS{sub x} thin films exhibited excellent performances for the reduction of triiodide ions. The photoelectric conversion efficiency (PCE) of the DSSC produced with the pulsed ECD MoS{sub x} thin-film CE was examined by a solar simulator. In combination with a dye-sensitized TiO{sub 2} working electrode and an iodine-based electrolyte, the DSSC with the MoS{sub x} flexible CE showed a PCE of 4.39% under an illumination of AM 1.5 (100 mW cm{sup −2}). Thus, we report that the MoS{sub x} thin films are active catalysts for triiodide reduction. The MoS{sub x} thin films are prepared at room temperature and atmospheric pressure and in a simple and rapid manner. This is an important practical contribution to the production of flexible low-cost thin-film CEs based on plastic substrates. The MoS{sub x

  16. Towards high-efficiency thin-film silicon solar cells with the “micromorph” concept

    OpenAIRE

    Meier, Johannes; Dubail, S.; Platz, R.; Torres, Pedro; Kroll, U.; Anna Selvan, J. A.; Pellaton Vaucher, N.; Hof, Ch.; Fischer, D.; Keppner, Herbert; Flückiger, R.; Shah, Arvind; Shklover, V.; Ufert, K. -D.

    2008-01-01

    Tandem solar cells with a microcrystalline silicon bottom cell (1 eV gap) and an amorphous-silicon top cell (1.7 eV gap) have recently been introduced by the authors; they were designated as “micromorph” tandem cells. As of now, stabilised efficiencies of 11.2% have been achieved for micromorph tandem cells, whereas a 10.7% cell is confirmed by ISE Freiburg. Micromorph cells show a rather low relative temperature coefficient of 0.27%/K. Applying the grain-boundary trapping model so far develo...

  17. Review of the CdCl2 Treatment Used in CdS/CdTe Thin Film Solar Cell Development and New Evidence towards Improved Understanding

    OpenAIRE

    Dharmadasa, I. M.

    2014-01-01

    Cadmium chloride treatment is a key processing step identified in the late 1970s to drastically improve the solar to electric conversion efficiency of CdS/CdTe thin film solar cells. Although a large body of experimental results are available to date, this process is yet to be understood even after three decades of research. This paper reviews the experimental results available, presents some new clues leading to improved understanding and suggests key research areas necessary to fully unders...

  18. Polycrystalline thin film cadmium telluride n-i-p solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V. (Ametek, Inc., Harleysville, PA (USA))

    1990-06-01

    This paper discusses experiments and analyses of technical, economic and environmental issues relating to CdTe n-i-p solar cells and their potential to satisfy the DOE PV program goals. The basic cell structure is CdS-CdTe-ZnTe. Included is an experimental and theoretical study of the operation of these devices. Experiments related to deposition of the CdS and ZnTe layers, cascaded solar cells, and module fabrication are described. Manufacturing issues relating to costs, worker safety, and environmental security are discussed. 40 refs., 25 figs., 16 tabs.

  19. Stable, high efficiency thin film solar cells produced by electrodeposition of cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Turner, A.K.; Woodcock, J.M.; Ozsan, M.E.; Summers, J.G.; Barker, J.; Binns, S.; Buchanan, K.; Chai, C.; Dennison, S.; Hart, R.; Johnson, D.; Marshall, R.; Oktik, S.; Patterson, M.; Perks, R.; Roberts, S.; Sadeghi, M.; Sherborne, J.; Szubert, J.; Webster, S. (BP Solar, Solar House, Leatherhead (United Kingdom))

    1991-12-01

    The highest known efficiency of 9.5% for a 300x300 mm series interconnected cadmium telluride solar cell is reported. In addition, efficiencies of up to 13% have been measured for small cells based on electrodeposited CdTe. The stability of modules in outdoor tests is discussed and an outline is given of the device fabrication procedure. (orig.).

  20. Intercalation Crystallization of Phase-Pure ..alpha..-HC(NH2)2PbI3 upon Microstructurally Engineered PbI2 Thin Films for Planar Perovskite Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yuanyuan; Yang, Mengjin; Kwun, Joonsuh; Game, Onkar S.; Zhao, Yixin; Pang, Shuping; Padture, Nitin P.; Zhu, Kai

    2016-03-28

    The microstructure of the solid-PbI2 precursor thin film plays an important role in the intercalation crystallization of the formamidinium lead triiodide perovskite (..alpa..-HC(NH2)2PbI3). It is shown that microstructurally engineered PbI2 thin films with porosity and low crystallinity are the most favorable for conversion into uniform-coverage, phase-pure ..alpha..-HC(NH2)2PbI3 perovskite thin films. Planar perovskite solar cells fabricated using these thin films deliver power conversion efficiency (PCE) up to 13.8%.

  1. Broadband grating couplers for efficient thin film solar cells. Final report; Breitband-Gitterkoppler fuer effiziente Duennschichtsolarzellen. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Stutzmann, M.; Nebel, C.E.; Eisele, C.; Klein, S.; Carius, R.; Finger, F.; Schubert, M.

    2002-08-01

    Efficient thin film solar cells usually require a dedicated light trapping strategy in order to achieve an optimum absorption of the solar spectrum. At present, mainly statistically textured transparent conducting electrodes are used for this purpose (TCO layers, e.g. ZnO). One aim of this project was the preparation and characterization of microstructured periodic grating couplers for the efficient trapping of weakly absorbed light in silicon thin film cells. In addition, a preliminary investigation concerning the feasibility of thin SiGe-alloy films on glass as an alternative absorber layer for tandem solar cells was to be performed. Periodically structured TCO electrodes were prepared by holographic laser patterning. These electrode layers are transparent up to the UV spectral range and can be easily structured into sub-micron gratings using HCl etching. In cooperation with the Institute for Photovoltaics (IPV), the resulting light trapping structures were overgrown by amorphous silicon solar cells using PECVD. The electrical and optical properties of these solar cells with integrated grating couplers were investigated in a systematic way, with special emphasis on the possible enhancement of the internal electric field caused by the microstructure. In addition, the growth of amorphous and microcrystalline silicon solar cell structures by hot wire CVD on both, structured as well as unstructured substrates was studied at the IPV. A second part of the project was concerned with the deposition of ultrapure amorphous Si, SiGe, and Ge films on glass by evaporation in an ultra high vacuum, followed by laser recrystallization and hydrogen passivation. For this purpose, a dedicated UHV deposition system was built. The deposited films were recrystallized with a variety of different laser techniques in order to achieve a first optimization of crystallite sizes and electronic properties. Main results of the project: (i) Grating couplers indeed can provide an efficient and

  2. Matching of Silicon Thin-Film Tandem Solar Cells for Maximum Power Output

    Directory of Open Access Journals (Sweden)

    C. Ulbrich

    2013-01-01

    Full Text Available We present a meaningful characterization method for tandem solar cells. The experimental method allows for optimizing the output power instead of the current. Furthermore, it enables the extraction of the approximate AM1.5g efficiency when working with noncalibrated spectra. Current matching of tandem solar cells under short-circuit condition maximizes the output current but is disadvantageous for the overall fill factor and as a consequence does not imply an optimization of the output power of the device. We apply the matching condition to the maximum power output; that is, a stack of solar cells is power matched if the power output of each subcell is maximal at equal subcell currents. The new measurement procedure uses additional light-emitting diodes as bias light in the JV characterization of tandem solar cells. Using a characterized reference tandem solar cell, such as a hydrogenated amorphous/microcrystalline silicon tandem, it is possible to extract the AM1.5g efficiency from tandems of the same technology also under noncalibrated spectra.

  3. Optical management in high-efficiency thin-film silicon micromorph solar cells with a silicon oxide based intermediate reflector

    Energy Technology Data Exchange (ETDEWEB)

    Domine, Didier; Buehlmann, Peter; Bailat, Julien; Billet, Adrian; Feltrin, Andrea; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel (Switzerland)

    2008-08-15

    In the effort to increase the stable efficiency of thin film silicon micromorph solar cells, a silicon oxide based intermediate reflector (SOIR) layer is deposited in situ between the component cells of the tandem device. The effectiveness of the SOIR layer in increasing the photo-carrier generation in the a-Si:H top absorber is compared for p-i-n devices deposited on different rough, highly transparent, front ZnO layers. High haze and low doping level for the front ZnO strongly enhance the current density (J{sub sc}) in the {mu}c-Si:H bottom cell whereas J{sub sc} in the top cell is influenced by the angular distribution of the transmitted light and by the reflectivity of the SOIR related to different surface roughness. A total J{sub sc} of 26.8 mA/cm{sup 2} and an initial conversion efficiency of 12.6% are achieved for 1.2 cm{sup 2} cells with top and bottom cell thicknesses of 300 nm and 3 {mu}m, and without any anti-reflective coating on the glass. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Nanostructuring on zinc phthalocyanine thin films for single-junction organic solar cells

    Science.gov (United States)

    Chaudhary, Dhirendra K.; Kumar, Lokendra

    2016-05-01

    Vertically aligned and random oriented crystalline molecular nanorods of organic semiconducting Zinc Phthalocyanine (ZnPc) have been grown on ITO coated glass substrate using solvent volatilization method. Interesting changes in surface morphology were observed under different solvent treatment. Vertically aligned nanorods of ZnPc thin film were observed in the films treated with acetone, where as the random oriented nanorods were observed in the films treated with chloroform. The X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) have been used for characterization of nanostructures. The optical properties of the nanorods have been investigated by UV-Vis. absorption spectroscopy.

  5. Research on polycrystalline thin-film materials, cells, and modules

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1990-11-01

    The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

  6. Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-10-01

    The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

  7. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhauer, David; Preidel, Veit; Becker, Christiane [Young Investigator Group Nanostructured Silicon for Photovoltaic and Photonic Implementations (Nano-SIPPE), Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Pollakowski, Beatrix; Beckhoff, Burkhard [Physikalisch-Technische Bundesanstalt, Berlin (Germany); Baumann, Jonas; Kanngiesser, Birgit [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany); Amkreutz, Daniel; Rech, Bernd [Institut Silizium Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Back, Franziska; Rudigier-Voigt, Eveline [SCHOTT AG, Mainz (Germany)

    2015-03-01

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiO{sub x} or SiO{sub x}/SiC{sub x}) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiO{sub x} compared to the SiO{sub x}/SiC{sub x} interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. The Development of Photocatalyst with Hybrid Material CNT/TiO2 Thin Films for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Yong Woo Kim

    2013-01-01

    Full Text Available Dye-sensitized solar cell (DSSC has big merits of simple manufacturing, low cost, and good applications. However, efficiency of DSSC is quite low compared with other solar cells based on silicon. Ability of electron delivery is important for improving the efficiency; therefore, CNT used as an electrode and transferring electrons and heat significantly easily can be highly expected to contribute to increase conversion efficiency of DSSC. In this paper, CNT was loaded on the photocatalyst of TiO2 thin films in the range from 0 wt% to 0.01 wt%. CNT was treated with 60% nitric acid at 120°C for 6 hrs and performed on ball milling process for 3 hrs. Hybrid material was made of TiO2 paste and CNT predispersed by mixing. To demonstrate the property of each sample, the analytical techniques including a spectrometer for transmission and surface resistance were used. The sample of higher concentration of CNT has low transmission but low resistance, besides we have researched a proper amount of CNT 0.001 wt% that can increase 1.5% conversion efficiency of DSSC.

  9. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system. PMID:27455911

  10. Analysis of impact of non-uniformities on thin-film solar cells and modules with two-dimesional simulations

    Science.gov (United States)

    Koishiyev, Galymzhan T.

    Clean and environmentally friendly photovoltaic (PV) technologies are now generally recognized as an alternative solution to many global-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primary challenge for all PV technologies. In that respect, thin-film polycrystalline PV technology (CdTe, Cu(In,Ga)Se2, etc), due to its fast production line, large area panels and low material usage, is one of the most promising low-cost technologies. Due to their granular structure, thin-film solar cells are inherently non-uniform. Also, inevitable fluctuations during the multistep deposition process of large area thin-film solar panels and specific manufacturing procedures such as scribing result in non-uniformities. Furthermore, non-uniformities can occur, become more severe, or increase in size during the solar-panel's life cycle due to various environmental conditions (i.e. temperature variation, shading, hail impact, etc). Non-uniformities generally reduce the overall efficiency of solar cells and modules, and their effects therefore need to be well understood. This thesis focuses on the analysis of the effect of non-uniformities on small size solar cells and modules with the help of numerical simulations. Even though the 2-D model developed here can analyze the effect of non-uniformities of any nature, only two specific types of microscopic non-uniformities were addressed here: shunts and weak-diodes. One type of macroscopic non-uniformity, partial shading, was also addressed. The circuit model developed here is a network of diodes, current-sources, and transparent-conductive-oxide (TCO) resistors. An analytic relation between the TCO-resistor, which is the primary model parameter, and TCO sheet resistance rhoS, which is the corresponding physical parameter, was derived. Based on the model several useful general results regarding a uniform cell were deduced. In particular, a global parameter delta, which determines the

  11. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    Science.gov (United States)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  12. Problems of efficiency of photoelectric conversion in thin-film CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    The available data are generalized and new results of investigation of losses of photoelectric energy conversion in CdS/CdTe thin-film solar cells are reported. The requirements concerning the electrical characteristics of the material, for minimizing the electric losses and providing effective radiation absorption in the active region of the diode structure, are discussed and refined. It is shown to what extent the incomplete collection of photogenerated charge carriers is determined by recombination both at the CdS/CdTe interface (based on the continuity equation taking into account the surface recombination) and in the space-charge region (based on the Hecht equation). The comparison of the calculated and experimental results shows that, in general, both types of recombination losses are important but can be virtually eliminated by the choice of parameters of both the barrier structure and the material used. The limiting values of the short-circuit current density and efficiency of the CdS/CdTe solar cell are discussed

  13. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    International Nuclear Information System (INIS)

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiOx or SiOx/SiCx) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiOx compared to the SiOx/SiCx interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Property control of expanding thermal plasma deposited textured zinc oxide with focus on thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Groenen, R. [Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Loeffler, J. [Utrecht University, Debye Institute, SID-Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Linden, J.L. [TNO TPD, Division Models and Processes, P.O. Box 595, 5600 AN Eindhoven (Netherlands); Schropp, R.E.I. [Utrecht University, Debye Institute, SID-Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Sanden, M.C.M. van de [Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands)]. E-mail: m.c.m.v.d.sanden@tue.nl

    2005-12-01

    Property control of expanding thermal plasma deposited textured zinc oxide is demonstrated considering intrinsic, i.e. bulk, and extrinsic transparent conducting oxide quality relevant for application in thin film amorphous silicon pin solar cells. Particularly the interdependence of electrical conductivity, film composition and film morphology, i.e. structure, feature shape and roughness of the surface, is addressed. Control of film composition is mainly governed by plasma production and gas phase chemistry inherently inducing a significant contribution to film morphology, whereas control of film morphology solely is governed by near-substrate conditions. Especially the ratio of zinc to oxygen and the reactor chamber pressure appear to be determinative in obtaining zinc oxide exhibiting the appropriate intrinsic and extrinsic quality, i.e. a high electrical conductivity, a high transmittance, a textured rough surface morphology and a strong hydrogen plasma resistance. The solar cell performance of appropriate undoped and aluminium doped textured zinc oxide inherently obtained during deposition is comparable with respect to Asahi U-type fluorine-doped tin oxide.

  15. Efficiency of Thin-Film CdS/CdTe Solar Cells

    OpenAIRE

    Kosyachenko, Leonid

    2010-01-01

    The findings of this paper give further insight into the problems and ascertain some requirements imposed on the CdTe absorber layer parameters in a CdTe/CdS solar cell, which in our opinion could be taken into account in the technology of fabrication of solar cells. The model taking into account the drift and diffusion photocurrent components with regard to recombination losses in the space-charge region, at the CdS-CdTe interface and the back surface of the CdTe layer allows us to obtain a ...

  16. Heat-treatment studies on thin-film CdS/Cu/sub x/S solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hmurcik, L.; Serway, R.A.

    1982-12-01

    The effects of hydrogen heat treatments are reported on CdS/Cu/sub x/S polycrystalline thin-film solar cells. The short-circuit current I/sub sc/ of the cells changes in an exponential manner such that I/sub sc/ = I/sub sc/ (t = 0)e/sup( t//tau)/sup 1/2/. The principle physical mechanism responsible for this change appears to be copper diffusion through the Cu/sub x/S layer as copper oxides at the surface are reduced or formed. We were able to maximize the cell efficiency with an error of 5% or less by monitoring changes in cell parameters during heat treatments. Changes in Cu/sub x/S stoichiometry were correlated with the sheet resistance of the Cu/sub x/S layer in completed cells. Results indicate that heat treatment in a hydrogen atmosphere causes an increase in resistivity (corresponding to an increase in stoichiometry) while oxygen causes the reverse.

  17. Effect of Ga/Cu Ratio on Polycrystalline CuGaSe Thin Film Solar Cell

    Directory of Open Access Journals (Sweden)

    M. M. Islam

    2011-01-01

    Full Text Available Structural and electrical properties of polycrystalline CuGaSe2 thin films have been studied by changing the Ga/Cu ratio in the films. CuGaSe2 thin films with various Ga/Cu ratio were grown over Mo-coated soda-lime glass substrates. With the increase of Ga content in CuGaSe2, morphology of the films was found to deteriorate which is associated with the smaller grain size and the appearance of impurity phases presumably due to the phase transition from the chalcopyrite structure to the defect-related phase on the surface of the films. Properties of the Ga poor films were affected by the Cu rich secondary phases. Electrical properties of the films were strongly influenced by the structural properties and degraded with increasing the Ga/Cu ratio in the film. Device performances, fabricated with the corresponding CuGaSe2 films, were found to be correlated with the Ga/Cu ratio in the films and consistent with the observed structural and electrical properties.

  18. Adhesive market develops new technologies. The thin-film solar cells gain ground; El mercado de adhesivos desarrolla nuevas tecnologias. Las celulas solares de capa fina ganan terreno

    Energy Technology Data Exchange (ETDEWEB)

    Kluke, M.

    2010-07-01

    The solar industry is booming. thin-film technology is experiencing a high demand as promised cost advantages and currently is providing excellent results, while a range of efficiency reaches acceptable. (Author)

  19. Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target

    Directory of Open Access Journals (Sweden)

    Min Xie

    2013-01-01

    Full Text Available CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low Jsc and low Voc of our cell.

  20. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    Science.gov (United States)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  1. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.

    1991-01-01

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C.The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities can result in conversion efficiencies over 15 percent.

  2. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  3. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  4. Observation on Surface and Cross Section of Thin Film Solar Cells Using Atomic Force Microscope

    Institute of Scientific and Technical Information of China (English)

    FENG Liang-huan; WU Li-li; CAI Wei; CAI Ya-ping; ZHENG Jia-gui; ZHANG Jing-quan; LI Bing; LI Wei

    2005-01-01

    Atomic force microscope (AFM) is able to produce three-dimensional digital data in both forcemode and height-mode and its applications are not limited to map the surfaces of conducting materials. It can use the force-mode to image the repulsive and attractive force patterns. The cross sections of polycrystalline CdS/CdTe and amorphous silicon heterojunction solar cells are observed with AFM. In case of short circuit,the microstructures of different layers in the samples are clearly displayed. When the cells are open circuit, the topographical images are altered, the potential outline due to the space charge in junction region is observed.Obviously, AFM can be employed to investigate experimentally built-in potential in junction of semiconductor devices, such as solar cells.

  5. Light-trapping design for thin-film silicon-perovskite tandem solar cells

    Science.gov (United States)

    Foster, Stephen; John, Sajeev

    2016-09-01

    Using finite-difference time-domain simulations, we investigate the optical properties of tandem silicon/perovskite solar cells with a photonic crystal architecture, consisting of a square-lattice array of inverted pyramids with a center-to-center spacing of 2.5 μm. We demonstrate that near-perfect light-trapping and absorption can be achieved over the 300-1100 nm wavelength range with this architecture, using less than 10 μm (equivalent bulk thickness) of crystalline silicon. Using a one-diode model, we obtain projected efficiencies of over 30% for the two-terminal tandem cell under a current-matching condition, well beyond the current record for single-junction silicon solar cells. The architecture is amenable to mass fabrication through wet-etching and uses a fraction of the silicon of traditional designs, making it an attractive alternative to other silicon-perovskite tandem designs.

  6. Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

    Science.gov (United States)

    Vanecek, Milan; Babchenko, Oleg; Purkrt, Adam; Holovsky, Jakub; Neykova, Neda; Poruba, Ales; Remes, Zdenek; Meier, Johannes; Kroll, Ulrich

    2011-04-01

    We report on the experimental realization of amorphous/microcrystalline silicon tandem solar cells (Micromorph) based on our three-dimensional design. An enhancement is reached in the short-circuit current by 40%, with an excellent open-circuit voltage of 1.41V and a fill factor of 72%. We have used nanoholes or microholes dry etched into the ZnO front contact layer. Monte Carlo optical modeling shows that stable efficiency of amorphous silicon p-i-n solar cells in over 12% range is possible. For the Micromorph cells, efficiency over 15% with the thickness of amorphous Si below 200 nm and of microcrystalline Si around 500 nm is possible.

  7. Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes

    Science.gov (United States)

    Battaglia, Corsin; Erni, Lukas; Boccard, Mathieu; Barraud, Loris; Escarré, Jordi; Söderström, Karin; Bugnon, Grégory; Billet, Adrian; Ding, Laura; Despeisse, Matthieu; Haug, Franz-Josef; Wolf, Stefaan De; Ballif, Christophe

    2011-06-01

    We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the cells is improved with respect to indium tin oxide and zinc oxide electrodes. We assess the potential for further current gains by identifying remaining sources of parasitic absorption and evaluate the light trapping capacity of each electrode. We further present a method, based on nonabsorbing insulating silicon nitride electrodes, allowing one to directly relate the optical reflectance to the external quantum efficiency. Our method provides a useful experimental tool to evaluate the light trapping potential of novel photonic nanostructures by a simple optical reflectance measurement, avoiding complications with electrical cell performance.

  8. Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

    CERN Document Server

    Abdo, Islam; Deckers, Jan; Depauw, Valérie; Tous, Loic; Van Gestel, Dries; Guindi, Rafik; Gordon, Ivan; Daif, Ounsi El

    2015-01-01

    The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.

  9. Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

    2012-06-01

    Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

  10. Nanostructured thin films for multiband-gap silicon triple junction solar cells

    OpenAIRE

    R. E. I. Schropp; Li, H. B. T.; Franken, R.H.; Rath, J.K.; van der Werf, C.H.M.; Schuttauf, J.A.; Stolk, R.L.

    2008-01-01

    By implementing nanostructure in multiband-gap proto-Si/proto-SiGe/nc-Si:H triple junction n–i–p solar cells, a considerable improvement in performance has been achieved. The unalloyed active layers in the top and bottom cell of these triple junction cells are deposited by Hot-Wire CVD. A significant current enhancement is obtained by using textured Ag/ZnO back contacts instead of plain stainless steel. We studied the correlation between the integrated current density in the long-wavelength r...

  11. Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wimmer, M., E-mail: mark.wimmer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Gerlach, D.; Wilks, R.G.; Scherf, S.; Félix, R. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Lupulescu, C. [Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ruske, F.; Schondelmaier, G.; Lips, K. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Hüpkes, J. [Institute for Energy Research, Forschungszentrum Jülich GmbH, Leo-Brandt-Straße, 52425 Jülich (Germany); Gorgoi, M. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Eberhardt, W. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Rech, B. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Bär, M., E-mail: marcus.baer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2013-10-15

    Highlights: •We used HAXPES to identify chemical interactions at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. •The results indicate a diffusion of zinc and aluminum into the silicon upon annealing procedures which are part of the solar cell processing. •The contamination of the silicon may be detrimental for the solar cell performance. -- Abstract: Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface – more pronounced for aluminum than for zinc – as explanation. Based on these insights the complex chemical interface structure is discussed.

  12. Solar cells and thin film LED using amorphous SiC. Amorphous SiC wo mochiita taiyou denchi oyobi usumaku LED

    Energy Technology Data Exchange (ETDEWEB)

    Hamakawa, Y. (Osaka Univ., Osaka (Japan). Faculty of Engineering Science)

    1990-03-25

    This paper introduced the photoelectric properties of amorphous SiC (a-SiC), application to highly efficient solar cells, application to wide area emitting elements such as LED (light emitting diode) and application to OEIC (optoelectronic integrated circuit) which is expected in near future. The light sensitizing effect in which photoconductivity of a-SiC:H film increases 2-3 figures by B dopping, was found. Flexible and wide area thin film LED has been able to manufacture by this discovery. In addition, highly efficient conversion rate has been able to get by the technical development such as solar cells made of a-SiC/ a-Si hetrojunction. Further, wide area sollar cells has been able to manufacture on any substrate by the development of TFLED (thin film light emitting diode). The application of TFLED made of SiC to OEIC is also investigated. 18 refs., 15 figs., 2 tabs.

  13. Thin film silicon solar cells: advanced processing and characterization - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Ballif, Ch.

    2008-04-15

    This final report elaborated for the Swiss Federal Office of Energy (SFOE) takes a look at the results of a project carried out at the photovoltaics laboratory at the University of Neuchatel in Switzerland. The project aimed to demonstrate the production of high-efficiency thin-film silicon devices on flexible substrates using low cost processes. New ways of improving processing and characterisation are examined. The process and manufacturing know-how necessary to provide support for industrial partners within the framework of further projects is discussed. The authors state that the efficiency of most devices was significantly improved, both on glass substrates and on flexible plastic foils. The process reproducibility was also improved and the interactions between the different layers in the device are now said to be better understood. The report presents the results obtained and discusses substrate materials, transparent conductors, defect analyses and new characterisation tools. Finally, the laboratory infrastructure is described.

  14. Sputtered of ZnO:Al thin Films for Application in Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Sona Flickyngerova

    2008-01-01

    Full Text Available High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al, were prepared by radio –frequency (RF diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various technological steps during preparation. The ion bombardment and the substrate temperature modified theirstructure, surface morphology, electrical and optical parameters. In this work we present changes between samples preparedat room temperature (RT and at 200°C, between samples on ion etched substrate and non-modified substrate, and effect ofion etching of the sample surface. We measured transmittance, resistivity and microroughness by AFM on all samples.

  15. Research progress of Cu2ZnSn(S,Se4 nanocrystal thin film solar cells

    Directory of Open Access Journals (Sweden)

    SHU Bo

    2015-08-01

    Full Text Available Cu2ZnSn(S,Se4(CZTSSe has received considerable attention because of its high light absorption coefficient,desired band gap,natural rich elements and non-toxic properties,which make it suitable for a candidate of photovoltaic materials.In this review,the physics properties of CZTSSe materials and the corresponding growth mechanism of CZTSSe are introduced first.Then,the influencing factors of hot-injection synthesis CZTSSe nanocrystals are discussed in detail,and the current situation of CZTSSe solar cells is also presented in this review.At last,the problems of the CZTSSe nanocrystal solar cells are mentioned and the development direction is predicted.

  16. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  17. V2O5 thin film deposition for application in organic solar cells

    Science.gov (United States)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  18. Research on polycrystalline thin-film materials, cells, and modules

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1990-11-01

    DOE supports research activities in polycrystalline thin films through the Polycrystalline Thin Film Program. This program includes includes R and D in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective is to support R and D of photovoltaic cells and modules that meet the DOE long term goals of high efficiency (15 to 20 percent), low cost ($50/sq cm), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin film CuInSe2 and CdTe solar cells and modules. These have become the leading thin film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe(sub 2) and CdTe modules. The recent progress and future directions are studied of the Polycrystalline Thin Film Program and the status of the subcontracted research on these promising photovoltaic materials.

  19. Heteroepitaxial Cu2O thin film solar