Control of wettability of hydrogenated amorphous carbon thin films by laser-assisted micro- and nanostructuring

International Nuclear Information System (INIS)

Pfleging, Wilhelm; Kohler, Robert; Torge, Maika; Trouillet, Vanessa; Danneil, Friederike; Stueber, Michael

2011-01-01

A flexible and rapid surface functionalization of amorphous carbon films shows a great potential for various application fields such as biological surfaces and tribological systems. For this purpose, the combination of thin film deposition and subsequent laser material processing was investigated. Amorphous carbon layers doped with hydrogen were deposited on silicon wafers by reactive direct-current magnetron sputtering. Films with three different hydrogen contents were synthesized. Subsequent to the thin film deposition process, UV laser material processing at wavelengths of 193 nm or 248 nm was performed with respect to chemical surface modification and surface structuring on micro- and nanometer scale. Depending on structure size and laser-induced chemical surface modification the adjustment of the surface energy and wetting behaviour in a broad range from hydrophobic to hydrophilic was possible. The chemical modification and the ablation mechanisms near the ablation threshold were strongly influenced by the hydrogen content in amorphous carbon thin films. Structural and chemical information of the as-deposited and modified films was obtained by Raman spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements.

Stress development in thin yttrium films on hard substrates during hydrogen loading

International Nuclear Information System (INIS)

Dornheim, M.; Pundt, A.; Kirchheim, R.; Molen, S. J. v. d.; Kooij, E. S.; Kerssemakers, J.; Griessen, R.; Harms, H.; Geyer, U.

2003-01-01

Polycrystalline (0002)-textured yttrium (Y) films of 50-500 nm thickness on sapphire substrates were loaded electrolytically with hydrogen (H). The stresses which build up in these films were measured in situ using curvature measurements. The results are compared to the behavior of bulk Y-H. A linear elastic model is used to predict the behavior of clamped thin films. Basic properties of the bulk Y-H phase diagram and elastic constants resemble the measured values of the thin films. Compressive stress builds up during H-loading in the α-Y phase and in the (α-Y+β-YH 2 ) two-phase field, showing an initial stress increase of -1.3 GPa per hydrogen concentration X H (compressive stress). While bulk Y-H samples are known to show a contraction in the β-YH 2 phase during H loading, thin films show no evidence for such a contraction during the first loading cycle of the film. The stress remains constant in the bulk β-phase concentration range (ΔX H =0.1 H/Y). This is attributed to the narrow β-phase field (ΔX H =0.02 H/Y) of the thin film during the first loading. Only samples which have been kept at a hydrogen concentration of about 1.5 H/Y for weeks show tensile stress in the concentration range of the bulk β phase. Amazingly a stress increase of about +0.5 GPa/X H (tensile stress) is measured in the β+γ two-phase field. This is attributed to the smaller in-plane nearest-neighbor distance in the γ phase compared to the β phase. In the γ-phase field compressive stress is built up again, compensating the tensile stress. It increases by -1.3 GPa/X H . In total, the net stress in Y-H films remains comparably small. This could be a reason for the good mechanical stability of such Y-H switchable mirrors during H cycling

Benefits of carbon addition on the hydrogen absorption properties of Mg-based thin films grown by Pulsed Laser Deposition

International Nuclear Information System (INIS)

Darok, X.; Rougier, A.; Bhat, V.; Aymard, L.; Dupont, L.; Laffont, L.; Tarascon, J.-M.

2006-01-01

Mg-Ni thin films were grown using Pulsed Laser Deposition. In situ optical changes from shiny metallic to transparent states were observed for films deposited in vacuum and under an Ar/H 2 gas mixture (93/7%), respectively. Optical changes were also achieved by ex situ hydrogenation under hydrogen gas pressure of 15 bars at 200 deg. C. However, after ex situ hydrogenation, the optical transmittance of the Mg-based hydrogenated thin films did not exceed 25%. Such limitation was attributed to oxygen contamination, as deduced by High Resolution Transmission Electron Microscopy observations, showing the co-existence of both Mg-based and MgO phases for as-deposited films. A significant decrease in oxygen contamination was successfully achieved with the addition of carbon, leading to the preparation of (Mg-based)-C x (x < 20%) thin films showing a faster and easier hydrogenation

Slow positron beam study of hydrogen ion implanted ZnO thin films

International Nuclear Information System (INIS)

Hu, Yi; Xue, Xudong; Wu, Yichu

2014-01-01

The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×10 15 and 1×10 16 ions cm −2 . Zn vacancy and OH bonding (V Zn +OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process. - Highlights: • Hydrogen introduced by ion implantation can form hydrogen-related defect complex. • V Zn +OH defect complex is identified by positron annihilation and IR spectroscopy. • Irradiation defects suppress the luminescence process

Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

International Nuclear Information System (INIS)

Elzakker, G. van; Nadazdy, V.; Tichelaar, F.D.; Metselaar, J.W.; Zeman, M.

2006-01-01

Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R (R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron microscopy imaging and Raman spectroscopy. The phase evolution from the amorphous phase into the mixed and eventually microcrystalline phase strongly depends on the hydrogen dilution. The initiation of the microcrystalline growth occurs between R = 20 and R = 25. The phase transition becomes more abrupt with increasing hydrogen dilution. Optoelectronic properties of the layers have been determined. Increasing hydrogen dilution results in films with increasing effective defect density and Urbach energy, which is related to inhomogeneous growth. The charge deep-level transient spectroscopy technique (Q-DLTS) was applied for the first time on hydrogen diluted thin silicon films in order to investigate the energy distribution of the defect states in these layers as a function of the dilution ratio R. The Q-DLTS spectra indicate a difference in defect-state distribution when the films evolve from the amorphous phase into the microcrystalline phase

Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering

International Nuclear Information System (INIS)

Wang, Fei; Chen, Xin-liang; Geng, Xin-hua; Zhang, De-kun; Wei, Chang-chun; Huang, Qian; Zhang, Xiao-dan; Zhao, Ying

2012-01-01

Highlights: ► Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. ► The directly deposited HGZO thin films present rough crater-type surface morphology. ► Typical HGZO thin film exhibits a high electron mobility of 41.3 cm 2 /V s and a relative low sheet resistance of ∼7.0 Ω. ► These HGZO thin films have high optical transmittances in the visible and near infrared region (∼380–1100 nm). ► A gradient H 2 growth method for fabricating HGZO thin films has been proposed in magnetron sputtering process. - Abstract: The main purposes are to obtain high quality transparent conductive oxide (TCO) based on zinc oxide (ZnO) thin films with high optical transparency in the visible and near infrared spectral range, high electrical conductivity and good light-scattering capability to enhance the path of the light inside the Si-based thin film solar cells. Natively textured surface hydrogenated gallium-doped ZnO (HGZO) thin films have been deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. These natively textured HGZO thin films exhibit high optical transmittance (over 80%) in the visible and near infrared region (λ = 380–1100 nm) and excellent electrical properties. The optimized HGZO thin film with crater-type textured surface obtained at the hydrogen flow rate of ∼2.0 sccm exhibits a high electron mobility of 41.3 cm 2 /V s and a relatively low sheet resistance of ∼7.0 Ω. The influences of hydrogen flow rates on the surface morphology, electrical and optical properties of HGZO thin films were investigated in detail. In addition, we put forward a method of gradient H 2 growth technique for fabricating HGZO thin films so as to obtain rough surface structure with good light-scattering capability and high electrical conductivity. “Crater-like” surface feature size and optical transmittance

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

Science.gov (United States)

Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

2013-05-01

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

2016-01-01

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping

2016-06-08

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

A systematic neutron reflectometry study on hydrogen absorption in thin Mg{sub 1-x}Al{sub x} alloy films

Energy Technology Data Exchange (ETDEWEB)

Fritzsche, H.; Poirier, E. [National Research Council of Canada, Chalk River, ON (Canada). Canadian Neutron Beam Centre; Haagsma, J.; Ophus, C.; Luber, E.; Harrower, C.T.; Mitlin, D. [Alberta Univ., Edmonton, AB (Canada). Dept. of Chemical and Materials Engineering; National Research Council of Canada, Edmonton, AB (Canada). National Inst. for Nanotechnology

2010-10-15

Various methods for storing hydrogen have been examined in an effort to find ways to store hydrogen in increasingly smaller volumes with decreasing weight of the whole hydrogen storage system. Metal hydrides, in which hydrogen is chemically bound to a metal atom, are considered to be very promising candidates for hydrogen storage because they have high gravimetric and volumetric storage capacities. This study investigated the effect of different magnesium (Mg) and aluminium (Al) ratios on the absorption and desorption properties of thin films. Neutron reflectometry (NR) was used in this study to better understand the absorption and desorption properties of commercially promising hydrogen storage materials. The large negative scattering length of hydrogen atoms changes the reflectivity curve substantially, so that NR can determine the total amount of stored hydrogen as well as the hydrogen distribution along the film normal, with nanometer resolution. In order to use NR, the samples must have smooth surfaces, and the film thickness should range between 10 and 200 nm. Thin Mg{sub 1-x}Al{sub x} alloy films (x = 0.2, 0.3, 0.4, 0.67) capped with a palladium (Pd) catalyst layer were used in this study. The NR experiments revealed that Mg{sub 0.7}Al{sub 0.3} is the optimum composition for this binary alloy system, with the highest amount of stored hydrogen and the lowest desorption temperature. All the thin films expanded by approximately 20 percent due to hydrogen absorption. The hydrogen was stored only in the MgAl layer without any hydrogen in the Pd layer. It was concluded that NR can be used to effectively determine the hydrogen profile in thin MgAl films. 29 refs., 5 figs.

Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

Science.gov (United States)

Patton, Ryan J; Wood, Michael G; Reano, Ronald M

2017-11-01

We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

Growth and hydrogenation of ultra-thin Mg films on Mo(111)

DEFF Research Database (Denmark)

Ostenfeld, Christopher Worsøe; Davies, Jonathan Conrad; Vegge, Tejs

2005-01-01

. Hydrogen cannot be adsorbed on magnesium films under UHV conditions. However, when evaporating Mg in a hydrogen background, a hydrogen overlayer is seen to adsorb at the Mg surface, due to the catalytic interaction with the Mo(1 1 1) substrate and subsequent spill-over. We show that two monolayers of Mg......The growth and hydrogenation of ultra-thin magnesium overlayers have been investigated on a Mo(1 1 1) single crystal substrate. For increasing magnesium coverages we observe intermediate stages in the TPD and LEISS profiles, which illustrate the transition from one monolayer to multilayer growth...

Fracture properties of hydrogenated amorphous silicon carbide thin films

International Nuclear Information System (INIS)

Matsuda, Y.; King, S.W.; Bielefeld, J.; Xu, J.; Dauskardt, R.H.

2012-01-01

The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si ≈ 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic–inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si ≈ 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (∼9.5 J m −2 ) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films.

Optically induced paramagnetism in amorphous hydrogenated silicon nitride thin films

International Nuclear Information System (INIS)

Warren, W.L.; Kanicki, J.; Buchwald, W.R.; Rong, F.C.; Harmatz, M.

1992-01-01

This paper reports that the creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins in electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport

Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

Energy Technology Data Exchange (ETDEWEB)

van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-01-23

The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

International Nuclear Information System (INIS)

Lan, Yung-Hsiang; Brahma, Sanjaya; Tzeng, Y.H.; Ting, Jyh-Ming

2014-01-01

We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

Pd thin films on flexible substrate for hydrogen sensor

Energy Technology Data Exchange (ETDEWEB)

Öztürk, Sadullah [Fatih Sultan Mehmet Vakıf University, Engineering Faculty, Istanbul (Turkey); Kılınç, Necmettin, E-mail: nkilinc@nigde.edu.tr [Nigde University, Mechatronics Engineering Department, 51245 Nigde (Turkey); Nigde University, Nanotechnology Application and Research Center, 51245 Nigde (Turkey)

2016-07-25

In this work, palladium (Pd) thin films were prepared via RF sputtering method with various thicknesses (6 nm, 20 nm and 60 nm) on both a flexible substrate and a hard substrate. Hydrogen (H{sub 2}) sensing properties of Pd films on flexible substrate have been investigated depending on temperatures (25–100 °C) and H{sub 2} concentrations (600 ppm – 10%). The effect of H{sub 2} on structural properties of the films was also studied. The films were characterized by Scanning Electron Microscopy (SEM) and X-ray diffraction. It is found that whole Pd films on hard substrate show permanent structural deformation after exposed to 10% H{sub 2} for 30 min. But, this H{sub 2} exposure does not causes any structural deformation for 6 nm Pd film on flexible substrate and 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2} concentration without any structural deformation. On the other hand, Pd film sensors that have the thicknesses 20 nm and 60 nm on flexible substrate are irreversible for higher H{sub 2} concentration (>2%) with film deformation. The sensor response of 6 nm Pd film on flexible substrate increased with increasing H{sub 2} concentration up 4% and then saturated. The sensitivity of the film decreased with increasing operation temperature. - Highlights: • Pd thin films fabricated by RF sputtering on both flexible and hard substrates. • Structural deformation observed for films on hard substrate after exposing 10% H{sub 2}. • 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2}. • H{sub 2} sensing properties of film on flexible substrate investigated depending on temperature and concentration. • The sensitivity of the film decreased with increasing operation temperature.

Round robin analyses of hydrogen isotope thin films standards

Energy Technology Data Exchange (ETDEWEB)

Banks, J.C. E-mail: jcbanks@sandia.gov; Browning, J.F.; Wampler, W.R.; Doyle, B.L.; LaDuca, C.A.; Tesmer, J.R.; Wetteland, C.J.; Wang, Y.Q

2004-06-01

Hydrogen isotope thin film standards have been manufactured at Sandia National Laboratories for use by the materials characterization community. Several considerations were taken into account during the manufacture of the ErHD standards, with accuracy and stability being the most important. The standards were fabricated by e-beam deposition of Er onto a Mo substrate and the film stoichiometrically loaded with hydrogen and deuterium. To determine the loading accuracy of the standards two random samples were measured by thermal desorption mass spectrometry and atomic absorption spectrometry techniques with a stated combined accuracy of {approx}1.6% (1{sigma}). All the standards were then measured by high energy RBS/ERD and RBS/NRA with the accuracy of the techniques {approx}5% (1{sigma}). The standards were then distributed to the IBA materials characterization community for analysis. This paper will discuss the suitability of the standards for use by the IBA community and compare measurement results to highlight the accuracy of the techniques used.

Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films

Science.gov (United States)

Eijt, S. W. H.; Kind, R.; Singh, S.; Schut, H.; Legerstee, W. J.; Hendrikx, R. W. A.; Svetchnikov, V. L.; Westerwaal, R. J.; Dam, B.

2009-02-01

We report positron depth-profiling studies on the hydrogen sorption behavior and phase evolution of Mg-based thin films. We show that the main changes in the depth profiles resulting from the hydrogenation to the respective metal hydrides are related to a clear broadening in the observed electron momentum densities in both Mg and Mg2Ni films. This shows that positron annihilation methods are capable of monitoring these metal-to-insulator transitions, which form the basis for important applications of these types of films in switchable mirror devices and hydrogen sensors in a depth-sensitive manner. Besides, some of the positrons trap at the boundaries of columnar grains in the otherwise nearly vacancy-free Mg films. The combination of positron annihilation and x-ray diffraction further shows that hydrogen loading at elevated temperatures, in the range of 480-600 K, leads to a clear Pd-Mg alloy formation of the Pd catalyst cap layer. At the highest temperatures, the hydrogenation induces a partial delamination of the ˜5 nm thin capping layer, as sensitively monitored by positron depth profiling of the fraction of ortho-positronium formed at interface with the cap layer. The delamination effectively blocks the hydrogen cycling. In Mg-Si bilayers, we investigated the reactivity upon hydrogen loading and heat treatments near 480 K, which shows that Mg2Si formation is fast relative to MgH2. The combination of positron depth profiling and transmission electron microscopy shows that hydrogenation promotes a complete conversion to Mg2Si for this destabilized metal hydride system, while a partially unreacted, Mg-rich amorphous prelayer remains on top of Mg2Si after a single heat treatment in an inert gas environment. Thin film studies indicate that the difficulty of rehydrogenation of Mg2Si is not primarily the result from slow hydrogen dissociation at surfaces, but is likely hindered by the presence of a barrier for removal of Mg from the readily formed Mg2Si.

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

International Nuclear Information System (INIS)

Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

2003-01-01

The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

International Nuclear Information System (INIS)

Hayashi, Kazushi; Hino, Aya; Tao, Hiroaki; Ochi, Mototaka; Goto, Hiroshi; Kugimiya, Toshihiro

2015-01-01

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Hayashi, Kazushi, E-mail: hayashi.kazushi@kobelco.com; Hino, Aya; Tao, Hiroaki; Ochi, Mototaka; Goto, Hiroshi; Kugimiya, Toshihiro [Electronics Research Laboratory, Kobe Steel, Ltd., 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651-2271 (Japan)

2015-09-14

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films.

A systematic neutron reflectometry study on hydrogen absorption in thin Mg{sub 1-x}Al{sub x} alloy films

Energy Technology Data Exchange (ETDEWEB)

Fritzsche, H.; Poirier, E., E-mail: helmut.fritzsche@nrc.gc.ca [National Research Council Canada, Canadian Neutron Beam Centre, Chalk River, ON (Canada); Haagsma, J.; Ophus, C.; Luber, E.; Harrower, C.; Mitlin, D. [Univ. of Alberta, and National Research Council Canada, Chemical and Materials Engineering, Edmonton, AB (Canada)

2010-10-15

In this article, we show how neutron reflectometry (NR) can provide deep insight into the absorption and desorption properties of commercially promising hydrogen storage materials. NR benefits from the large negative scattering length of hydrogen atoms, which changes the reflectivity curve substantially, so that NR can determine not only the total amount of stored hydrogen but also the hydrogen distribution along the film normal, with nanometer resolution. To use NR, the samples must have smooth surfaces, and the film thickness should range between 10 and 200 nm. We performed a systematic study on thin Mg{sub 1-x}Al{sub x} alloy films (x = 0.2, 0.3, 0.4, 0.67) capped with a Pd catalyst layer. Our NR experiments showed that Mg{sub 0.7}Al{sub 0.3} is the optimum alloy composition with the highest amount of stored hydrogen and the lowest desorption temperature. All the thin films expand by about 20% because of hydrogen absorption, and the hydrogen is stored only in the MgAl layer with no hydrogen content in the Pd layer. (author)

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

2013-01-01

Roč. 580, suppl. 1 (2013), S40-S43 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : defects * hydrogen * positron annihilation * thin films * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.726, year: 2013

The deuterium-exchange reaction between water and hydrogen with the thin-film hydrophobic catalyst

International Nuclear Information System (INIS)

Yamashita, Hisao; Mizumoto, Mamoru; Matsuda, Shimpei

1985-01-01

The deuterium-exchange reaction between water and hydrogen with a hydrophobic catalyst was studied. The hydrophobic catalyst was composed of platinum as an active component and porous poly(tetrafluoroethylene) (PTFE) as a support. The PTFE support was in two forms, i.e., (a) a pellet and (b) a thin-film with the thickness of 50 μm. The primary purpose of the thin film hydrophobic catalyst was to reduce the platinum usage in the reactor. The activity of the catalyst was measured in a trickle bed reactor at atmospheric pressure and temperature of 20 ∼ 70 deg C. It has been found that the employment of the thin-film catalyst reduced the platinum usage to 1/5 of the reactor in the case of using a conventional catalyst. Platinum particles on the thin-film catalyst work efficiently because the reactants were easily diffused to the active sites. It has also been found that the isotopic exchange rate with the thin-film catalyst increased with the increase in the ratio of liquid/gas and increased with the rise of the reaction temperature. It was found from an endurance test that the activity of the thin-film catalyst decreased gradually due to the condensation of water vapor in the catalyst, but was regenarated by heating the catalyst to remove the condensed water. (author)

The role of surface oxides on hydrogen sorption kinetics in titanium thin films

Science.gov (United States)

Hadjixenophontos, Efi; Michalek, Lukas; Roussel, Manuel; Hirscher, Michael; Schmitz, Guido

2018-05-01

Titanium is presently discussed as a catalyst to accelerate the hydrogenation kinetics of hydrogen storage materials. It is however known that H absorption in Ti decisively depends on the surface conditions (presence or absence of the natural surface oxide). In this work, we use Ti thin films of controlled thickness (50-800 nm) as a convenient tool for quantifying the atomic transport. XRD and TEM investigations allow us to follow the hydrogenation progress inside the film. Hydrogenation of TiO2/Ti bi-layers is studied at 300 °C, for different durations (10 s to 600 min) and at varying pressures of pure H2 atmosphere. Under these conditions, the hydrogenation is found to be linear in time. By comparing films with and without TiO2, as well as by studying the pressure dependence of hydrogenation, it is demonstrated that hydrogen transport across the oxide represents the decisive kinetic barrier rather than the splitting of H2 molecules at the surface. Hydrogenation appears by a layer-like reaction initiated by heterogeneous nucleation at the backside interface to the substrate. The linear growth constant and the H diffusion coefficient inside the oxide are quantified, as well as a reliable lower bound to the hydrogen diffusion coefficient in Ti is derived. The pressure dependence of hydrogen absorption is quantitatively modelled.

Low-Cost, Fiber-Optic Hydrogen Gas Detector Using Guided-Wave, Surface-Plasmon Resonance in Chemochromic Thin Films

International Nuclear Information System (INIS)

Tracy, C.E.; Benson, D.K.; Haberman, D.P.; Hishmeh, G.A.; Ciszek, P.A.

1998-01-01

Low-cost, hydrogen-gas-leak detectors are needed for many hydrogen applications, such as hydrogen-fueled vehicles where several detectors may be required in different locations on each vehicle. A fiber-optic leak detector could be inherently safer than conventional detectors, because it would remove all detector electronics from the vicinity of potential leaks. It would also provide freedom from electromagnetic interference, a serious problem in fuel-cell-powered electric vehicles. This paper describes the design of a fiber-optic, surface-plasmon-resonance hydrogen detector, and efforts to make it more sensitive, selective, and durable. Chemochromic materials, such as tungsten oxide and certain Lanthanide hydrides, can reversibly react with hydrogen in air while exhibiting significant changes in their optical properties. Thin films of these materials applied to a sensor at the end of an optical fiber have been used to detect low concentrations of hydrogen gas in air. The coatings include a thin silver layer in which the surface plasmon is generated, a thin film of the chemochromic material, and a catalytic layer of palladium that facilitates the reaction with hydrogen. The film thickness is chosen to produce a guided-surface plasmon wave along the interface between the silver and the chemochromic material. A dichroic beam-splitter separates the reflected spectrum into a portion near the resonance and a portion away from the resonance, and directs these two portions to two separate photodiodes. The electronic ratio of these two signals cancels most of the fiber transmission noise and provides a stable hydrogen signal

Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient

International Nuclear Information System (INIS)

Schneider, J.M.; Anders, A.; Hjoervarsson, B.; Petrov, I.; Macak, K.; Helmersson, U.; Sundgren, J.

1999-01-01

We describe the hydrogen uptake during the synthesis of alumina films from H 2 O present in the high vacuum gas background. The hydrogen concentration in the films was determined by the 1 H( 15 N,αγ) 12 C nuclear resonance reaction. Furthermore, we show the presence of hydrogen ions in the plasma stream by time-of-flight mass spectrometry. The hydrogen content increased in both the film and the plasma stream, as the oxygen partial pressure was increased. On the basis of these measurements and thermodynamic considerations, we suggest that an aluminum oxide hydroxide compound is formed, both on the cathode surface as well as in the film. The large scatter in the data reported in the literature for refractive index and chemical stability of alumina thin films can be explained on the basis of the suggested aluminum oxide hydroxide formation. copyright 1999 American Institute of Physics

Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

International Nuclear Information System (INIS)

Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

2001-08-01

In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

Photoelectrochemical study of nanostructured ZnO thin films for hydrogen generation from water splitting

Energy Technology Data Exchange (ETDEWEB)

Wolcott, Abraham; Zhang, Jin Z. [Department of Chemistry and Biochemistry, University of California, Santa Cruz 1156 High St. Santa Cruz, CA 95064 (United States); Smith, Wilson A.; Zhao, Yiping [Department of Physics and Astronomy, University of Georgia, Athens, GA 30602 (United States); Kuykendall, Tevye R. [Department of Chemistry, University of California, Berkeley Berkeley, CA 94720 (United States)

2009-06-23

Photoelectrochemical cells based on traditional and nanostructured ZnO thin films are investigated for hydrogen generation from water splitting. The ZnO thin films are fabricated using three different deposition geometries: normal pulsed laser deposition, pulsed laser oblique-angle deposition, and electron-beam glancing-angle deposition. The nanostructured films are characterized by scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and photoelectrochemical techniques. Normal pulsed laser deposition produces dense thin films with ca. 200 nm grain sizes, while oblique-angle deposition produces nanoplatelets with a fishscale morphology and individual features measuring ca. 900 by 450 nm on average. In contrast, glancing-angle deposition generates a highly porous, interconnected network of spherical nanoparticles of 15-40 nm diameter. Mott-Schottky plots show the flat band potential of pulsed laser deposition, oblique-angle deposition, and glancing-angle deposition samples to be -0.29, -0.28 and +0.20 V, respectively. Generation of photocurrent is observed at anodic potentials and no limiting photocurrents were observed with applied potentials up to 1.3 V for all photoelectrochemical cells. The effective photon-to-hydrogen efficiency is found to be 0.1%, 0.2% and 0.6% for pulsed laser deposition, oblique-angle deposition and glancing-angle deposition samples, respectively. The photoelectrochemical properties of the three types of films are understood to be a function of porosity, crystal defect concentration, charge transport properties and space charge layer characteristics. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

Science.gov (United States)

Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

2010-10-01

Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

Science.gov (United States)

Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

2018-01-01

Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

Deposition of Pd–Ag thin film membranes on ceramic supports for hydrogen purification/separation

Energy Technology Data Exchange (ETDEWEB)

Pereira, A.I. [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal); Pérez, P.; Rodrigues, S.C.; Mendes, A.; Madeira, L.M. [LEPAE, Chemical Engineering Department, Faculty of Engineering, University of Porto, Rua Dr. Roberto Frias s/n, 4200-465 Porto (Portugal); Tavares, C.J., E-mail: ctavares@fisica.uminho.pt [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal)

2015-01-15

Highlights: • Thin film Pd–Ag membranes have been produced for hydrogen selectivity. • Magnetron sputtering yields Pd–Ag compact films for atomic H diffusion. • The thin film Pd–Ag membranes yielded a selectivity of α (H{sub 2}/N{sub 2}) = 10. - Abstract: Pd–Ag based membranes supported on porous α-Al{sub 2}O{sub 3} (doped with yttria-stabilized zirconia) were studied for hydrogen selective separation. Magnetron sputtering technique was employed for the synthesis of thin film membranes. The hydrogen permeation flux is affected by the membrane columnar structure, which is formed during deposition. From scanning electron microscopy analysis, it was observed that different sputtering deposition pressures lead to distinct columnar structure growth. X-ray diffraction patterns provided evidence of a Pd–Ag solid solution with an average crystallite domain size of 21 nm, whose preferential growth can be altered by the deposition pressure. The gas-permeation results have shown that the Pd–Ag membrane supported on porous α-Al{sub 2}O{sub 3} is selective toward H{sub 2}. For optimized membrane synthesis conditions, the permeance toward N{sub 2} is 0.076 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1} at room temperature, whereas for a pressure difference of 300 kPa the H{sub 2}-flux is of the order of ca. 0.21 mol m{sup −2} s{sup −1}, which corresponds to a permeance of 0.71 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1}, yielding a selectivity of α (H{sub 2}/N{sub 2}) = 10. These findings suggest that the membrane has a reasonable capacity to selectively permeate this gas.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

International Nuclear Information System (INIS)

Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

2013-01-01

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

Energy Technology Data Exchange (ETDEWEB)

Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

Science.gov (United States)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2017-07-01

In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

2016-04-30

Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

Decoration of PbS nanoparticles on Al-doped ZnO nanorod array thin film with hydrogen treatment as a photoelectrode for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Hsu, Chih-Hsiung; Chen, Chao-Hong [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chen, Dong-Hwang, E-mail: chendh@mail.ncku.edu.tw [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2013-03-25

Highlights: ► AZO nanorod array thin film is used as a photoanode for solar water splitting. ► Hydrogen treatment and sensitization by PbS nanoparticles enhance photocurrent. ► A novel ITO/FTO-free composite photoelectrode is developed. ► The pre-fabrication and use of an extra TCO thin film substrate is unnecessary. -- Abstract: Al-doped ZnO (AZO) nanorod arrays thin film with hydrogen treatment is directly used as a photoelectrode for solar water splitting without an extra transparent conducting oxide (TCO) thin film because it possesses the functions of TCO thin film and photoactive 1-dimensional nanostructured semiconductor simultaneously. To enhance the absorption in the visible region, PbS nanoparticles decorated the AZO nanorods via successive ionic layer adsorption and reaction route. The PbS nanoparticles have a face-centered cubic structure and their decoration does not destroy the 1-dimensional morphology of AZO nanorod arrays. With increasing the cycle number of PbS nanoparticles decoration, the grain size and loading of PbS nanoparticles become larger gradually which leads to lower energy bandgap and stronger absorption. A maximum photocurrent density of 1.65 mW cm{sup −2} is obtained when the cycle number is 20, which is much higher than those without PbS nanoparticles sensitization or hydrogen treatment. This demonstrates that the AZO nanorod array thin film with hydrogen treatment can be directly used as a photoelectrode without an extra TCO thin film. Because the use of expensive metals can be avoided and the pre-fabrication of TCO thin film substrate is necessary no more, the fabrication of such a composite photoelectrode becomes simple and low-cost. So, it has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption.

Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

International Nuclear Information System (INIS)

Drenik, A.; Vesel, A.; Mozetic, M.

2006-01-01

We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

Hydrogen insertion in titanium carbide based thin films (nc-TiC{sub x}/a-C:H) - comparison with bulk TiC{sub x}

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Julien; Jaoul, Cédric, E-mail: jaoul@ensil.unilim.fr; Glandut, Nicolas; Lefort, Pierre

2016-08-01

Nanocomposites composed of titanium carbide nanosized grains embedded in an amorphous hydrogenated carbon matrix (nc-TiC{sub x}/a-C:H) are prepared by hybrid Magnetron Sputtering - PECVD process using a titanium metal target and gaseous C{sub 6}H{sub 6}. By controlling the benzene flow rate, thin films with different carbon content are obtained. The structures of nc-TiC{sub x}/a-C:H materials are analyzed by X-ray diffraction, X-ray photoelectron and Raman spectroscopic methods. The electrochemical hydrogen insertion, as studied by cyclic voltammetry, strongly depends on the carbon content in the thin films. The correlation between the hydrogen insertion ability and the structure of materials are discussed. Furthermore, we show that the hydrogen insertion in these thin films reaches values much more significant than in bulk substoichiometric titanium carbide obtained by reactive sintering. - Highlights: • nc-TiC{sub x}/a-C:H thin films are prepared hybrid Magnetron Sputtering - PECVD process. • Different carbon contents are obtained by changing the hydrocarbon flowrate. • Expanded lattice parameter of the TiC{sub x} phase and a-C:H phase are observed. • Electrochemical hydrogen insertion strongly depends on the carbon content. • The maximum insertion is 22 times more important than bulk TiC{sub x}.

Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

CERN Document Server

Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

2006-01-01

The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

Hydrogen Absorption in Metal Thin Films and Heterostructures Investigated in Situ with Neutron and X-ray Scattering

Directory of Open Access Journals (Sweden)

Sara J. Callori

2016-05-01

Full Text Available Due to hydrogen possessing a relatively large neutron scattering length, hydrogen absorption and desorption behaviors in metal thin films can straightforwardly be investigated by neutron reflectometry. However, to further elucidate the chemical structure of the hydrogen absorbing materials, complementary techniques such as high resolution X-ray reflectometry and diffraction remain important too. Examples of work on such systems include Nb- and Pd-based multilayers, where Nb and Pd both have strong affinity to hydrogen. W/Nb and Fe/Nb multilayers were measured in situ with unpolarized and polarized neutron reflectometry under hydrogen gas charging conditions. The gas-pressure/hydrogen-concentration dependence, the hydrogen-induced macroscopic film swelling as well as the increase in crystal lattice plane distances of the films were determined. Ferromagnetic-Co/Pd multilayers were studied with polarized neutron reflectometry and in situ ferromagnetic resonance measurements to understand the effect of hydrogen absorption on the magnetic properties of the system. This electronic effect enables a novel approach for hydrogen sensing using a magnetic readout scheme.

Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

International Nuclear Information System (INIS)

Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

2014-01-01

Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

Hydrogen absorption by thin Pd/Nb films deposited on glass

International Nuclear Information System (INIS)

Reisfeld, G.; Jisrawi, N.M.; Ruckman, M.W.; Strongin, M.

1996-01-01

Hydrogen absorption by 200 endash 2000-A-thick Pd-capped Nb films, between 5 and 110 degree C, was studied by simultaneous four-probe resistivity and volumetric measurements. The resistivity as a function of hydrogen concentration was measured while charging the films with hydrogen, and was used to compute the change in hydrogen concentration in the film, during the reaction with oxygen. For the thinnest films (200 A thick), the hydrogen charging and discharging curves indicate that a first-order gas-liquid-like phase transition with a T c of 70 endash 75 degree C takes place. The H-Nb phase diagram for the 200-A film looks like the H/bulk Nb α-α' phase diagram which has a higher T c (173 degree C). We attribute the substantial modifications of the film close-quote s phase diagram to the clamping of the Nb film at its interfaces with glass and Pd and to the nanostructure of the films. copyright 1996 The American Physical Society

Hydrogen incorporation by plasma treatment gives mesoporous black TiO ₂ thin films with visible photoelectrochemical water oxidation activity

Energy Technology Data Exchange (ETDEWEB)

Islam, Syed Z.; Reed, Allen; Nagpure, Suraj; Wanninayake, Namal; Browning, James F.; Strzalka, Joseph; Kim, Doo Young; Rankin, Stephen E.

2018-05-01

In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H2 plasma treatment makes TiO2 films black, with broad-spectrum enhancement of visible light absorption, and XPS analysis shows peak for Ti3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO2 is accompanied by significant hydrogen uptake and not just Ti3+ generation or surface disordering.

Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

Directory of Open Access Journals (Sweden)

Veronika Vavrunkova

2007-01-01

Full Text Available We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñor, Ana L.

2014-06-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñ or, Ana L.; Mejia, Israel I.; Sotelo-Lerma, Mé rida; Guo, Zaibing; Alshareef, Husam N.; Quevedo-Ló pez, Manuel Angel Quevedo

2014-01-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

In situ electrochemical XRD study of (de)hydrogenation of MgyTi100-y thin films

NARCIS (Netherlands)

Vermeulen, P.; Wondergem, H.J.; Graat, P.C.J.; Borsa, D.M.; Schreuders, H.; Dam, B.; Griessen, R.; Notten, P.H.L.

2008-01-01

X-ray diffraction and electrochemical (de)hydrogenation were performed in situ to monitor the symmetry of the unit cells of MgyTi100-y thin film alloys (with 70 to 90 at.% Mg) along the pressure composition isotherms at room temperature. The diffraction patterns show that the crystal structures of

Mechanical stress and stress release channels in 10–350 nm palladium hydrogen thin films with different micro-structures

International Nuclear Information System (INIS)

Wagner, Stefan; Kramer, Thilo; Uchida, Helmut; Dobron, Patrik; Cizek, Jakub; Pundt, Astrid

2016-01-01

For thin metal films adhered to rigid substrates hydrogen uptake results in compressive stresses in the GPa range. Stresses affect the thermodynamics as well as the durability of thin films, but many films can release stress above critical stress values. Depending on the films' thickness, microstructure and adhesion to the substrate, which determine the energy available in the nano-sized system, stress release is conducted via different release mechanisms. To evaluate the different mechanisms, Palladium thin films ranging from 10 nm to 350 nm and with three different types of microstructures (nanocrystalline, multi-oriented epitaxy and three-fold epitaxy) are studied with special focus on the mechanical stress. In-situ substrate curvature measurements, XRD stress analyses and acoustic emission (AE) measurements are conducted to determine intrinsic stresses, hydrogen-induced stress changes and stress release signals. By this complementary experimental approach, different stress release mechanisms (named channels) are identified. Discrete stress relaxation (DSR) events are found already within the overall linear elastic stress-strain regime. Energies to stimulate DSRs lay well below the formation energy of dislocations, and may allow the movement of defects pre-existing in the films. For higher strain energies, all studied films can release stress by the formation of new dislocations and plastic deformation. When the adhesion to the substrate is small, an alternative release channel of film buckling opens for thick films.

Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

Science.gov (United States)

Patra, Chandralina; Das, Debajyoti

2018-04-01

Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

International Nuclear Information System (INIS)

Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

2013-01-01

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H 2 O indicate that this threshold annealing temperature corresponds to depletion of H 2 O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested

Characterization and hydrogen gas sensing properties of TiO{sub 2} thin films prepared by sol-gel method

Energy Technology Data Exchange (ETDEWEB)

Haidry, Azhar Ali [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Bratislava (Slovakia); Puskelova, Jarmila [Department of Inorganic Chemistry, Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia); Plecenik, Tomas; Durina, Pavol; Gregus, Jan; Truchly, Martin; Roch, Tomas; Zahoran, Miroslav [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Bratislava (Slovakia); Vargova, Melinda [Department of Inorganic Chemistry, Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia); Kus, Peter; Plecenik, Andrej [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Bratislava (Slovakia); Plesch, Gustav, E-mail: plesch@fns.uniba.sk [Department of Inorganic Chemistry, Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia)

2012-10-15

Highlights: Black-Right-Pointing-Pointer Preparation and characterization of hydrogen sensing TiO{sub 2} thin films by sol-gel method. Black-Right-Pointing-Pointer The annealing effect on the structure, electrical, optical and sensing properties was studied. Black-Right-Pointing-Pointer The best sensitivity show the films composed of rutile with grain size of {approx}100 nm. - Abstract: Thin films of titanium dioxide with thickness of about 150 nm were deposited by spin coating method on a sapphire substrate from a sol-gel and annealed at various temperatures (from 600 Degree-Sign C to 1000 Degree-Sign C). Structural, optical and hydrogen gas sensing properties of the films were investigated. The annealing temperatures from 600 to 800 Degree-Sign C led to anatase phase with grain size in the range of 14-28 nm. Further increase of the annealing temperature resulted in transformation to rutile phase with larger grain size of about 100-120 nm. The optical band gap tended to decrease with increasing annealing temperature. The estimated values of activation energy for charge transport were in the range of 0.6-1.0 eV for films annealed at temperatures from 600 Degree-Sign C to 800 Degree-Sign C and 0.37-0.38 eV for films annealed at 900 Degree-Sign C and 1000 Degree-Sign C. The films annealed at 900 Degree-Sign C and 1000 Degree-Sign C showed better hydrogen sensitivity, what can be at least partially caused by their higher surface roughness.

Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-11-30

Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

Controlled delamination of metal films by hydrogen loading

Energy Technology Data Exchange (ETDEWEB)

Nikitin, Eugen

2008-11-18

n this work we quantitatively determine the adhesion energy between metal films and their substrates. Therefore a new controlled buckling technique is established, applying the strong compressive in-plane stress that results in thin films clamped on rigid substrates during hydrogen loading. When the elastic energy stored in the H-loaded thin film exceeds the adhesion energy between film and substrate, delamination occurs. At the onset of delamination, a critical hydrogen concentration, a critical stress value and a critical bending of the substrate are present, which are quantitative measures for the adhesion energy and permit its calculation. As the critical values are determined at the onset of delamination, plastic deformation is negligible, which denies the quantitative determination of adhesion energies in conventional test setups. In multilayer-systems, adhesion energies between substrates and films that hardly absorb hydrogen can be measured by the controlled buckling technique, when the films of interest are coated with hydrogen absorbing films (active layer). The measurements are performed easily and can be repeated under the same test conditions, while variables such as the thickness of the coating materials or the boundary surface structure can be varied and optimized. In this work the adhesion energies of different materials on polycarbonate and niobium on sapphire are investigated. (orig.)

Hydrogen passivation of polycrystalline Si thin film solar cells

International Nuclear Information System (INIS)

Gorka, Benjamin

2010-01-01

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

Directory of Open Access Journals (Sweden)

F. Urbain

2014-01-01

Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

International Nuclear Information System (INIS)

Sel, Kıvanç; Güneş, İbrahim

2012-01-01

Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

Preparation and Hydrogen Absorption/Desorption of Nanoporous Palladium Thin Films

Directory of Open Access Journals (Sweden)

Wen-Chung Li

2009-12-01

Full Text Available Nanoporous Pd (np-Pd was prepared by co-sputtering Pd-Ni alloy films onto Si substrates, followed by chemical dealloying with sulfuric acid. X-ray diffractometry and chemical analysis were used to track the extent of dealloying. The np-Pd structure was changed from particle-like to sponge-like by diluting the sulfuric acid etchant. Using suitable precursor alloy composition and dealloying conditions, np-Pd films were prepared with uniform and open sponge-like structures, with interconnected ligaments and no cracks, yielding a large amount of surface area for reactions with hydrogen. Np-Pd films exhibited shorter response time for hydrogen absorption/desorption than dense Pd films, showing promise for hydrogen sensing.

Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

International Nuclear Information System (INIS)

Aka, B.

1989-04-01

The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

Review of WO3 thin film preparation for photoelectrochemical water splitting

International Nuclear Information System (INIS)

Ehsan Eftekhari; Mohammad Kassim

2009-01-01

Full text: Tungsten trioxide (WO 3 ), which is one of the most essential materials in our daily life has appeared as an excellent photo electrode material for environmental purification. The nano-size of WO 3 thin film water-splitting technology has great potential for environmentally friendly solar-hydrogen production for the future hydrogen economy. There are several methods for producing tungsten oxide film. In this review, we outlined several WO 3 thin film preparation methods such as doctor Bladding, sputtering, layer-by-layer brush painting, spray pyrolysis deposition, sol-gel and other methods. Here we compare the maximum photocurrent obtained, different condition for preparation of WO 3 thin film and characterization outcome. (author)

Thin films and nanomaterials

International Nuclear Information System (INIS)

Jayakumar, S.; Kannan, M.D.; Prasanna, S.

2012-01-01

The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

Investigate of analysis for hydrogen contents in carbon films

International Nuclear Information System (INIS)

Yasui, Haruyuki; Hirose, Yukio; Sasaki, Toshihiko; Awazu, Kaoru; Naramoto, Hiroshi

2001-01-01

Hydrogen is a very common contaminant in carbon films. It can strongly influences on mechanical, physical and chemical properties of the films. The analysis of hydrogen is therefore a crucial problem to prepare the films with the reproducible property. We were measured two kinds of methods. Ion beam techniques using nuclear reactions are established methods for the quantitative determination of hydrogen concentration. A spectrometer has been constructed for the determination of hydrogen concentrations by detecting 4.43 MeV γ-rays from the resonant nuclear reactions 1 H( 15 N, α γ) 12 C at the 6.385 MeV. And the other measurement of hydrogen is GDOES (Glow Discharge Optical Emission Spectroscopy), with its high sputtering rates, had been used previously for depth profiling analysis of thin films. The depth profiling analysis was carried out at an argon atmosphere by applying an RF of 13.56 MHz. The sampling time interval was 0.1 sec. The detailed hydrogen analysis was made on BCN (Boron Carbonitride) and DLC (Diamond-like Carbon) thin films. The BCN films were prepared by ion beam assisted deposition, in which boron and carbon were deposited by electron beam heating of B 4 C solid and nitrogen was supplied by implantation simultaneously. The DLC films were prepared by HPPC (Hybrid-pulse plasma coating) system. It was a new coating system that we developed which consists fundamentally of plasma CVD (chemical vapor deposition) and ion-mixing. In this paper, we reported the comparison of analysis for hydrogen contents between RNRA and GDOES. (author)

Investigate of analysis for hydrogen contents in carbon films

Energy Technology Data Exchange (ETDEWEB)

Yasui, Haruyuki; Hirose, Yukio; Sasaki, Toshihiko [Kanazawa Univ., Kanazawa, Ishikawa (Japan); Awazu, Kaoru [Industrial Research Institute of Ishikawa, Kanazawa, Ishikawa (Japan); Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2001-07-01

Hydrogen is a very common contaminant in carbon films. It can strongly influences on mechanical, physical and chemical properties of the films. The analysis of hydrogen is therefore a crucial problem to prepare the films with the reproducible property. We were measured two kinds of methods. Ion beam techniques using nuclear reactions are established methods for the quantitative determination of hydrogen concentration. A spectrometer has been constructed for the determination of hydrogen concentrations by detecting 4.43 MeV {gamma}-rays from the resonant nuclear reactions {sup 1}H({sup 15}N, {alpha} {gamma}){sup 12}C at the 6.385 MeV. And the other measurement of hydrogen is GDOES (Glow Discharge Optical Emission Spectroscopy), with its high sputtering rates, had been used previously for depth profiling analysis of thin films. The depth profiling analysis was carried out at an argon atmosphere by applying an RF of 13.56 MHz. The sampling time interval was 0.1 sec. The detailed hydrogen analysis was made on BCN (Boron Carbonitride) and DLC (Diamond-like Carbon) thin films. The BCN films were prepared by ion beam assisted deposition, in which boron and carbon were deposited by electron beam heating of B{sub 4}C solid and nitrogen was supplied by implantation simultaneously. The DLC films were prepared by HPPC (Hybrid-pulse plasma coating) system. It was a new coating system that we developed which consists fundamentally of plasma CVD (chemical vapor deposition) and ion-mixing. In this paper, we reported the comparison of analysis for hydrogen contents between RNRA and GDOES. (author)

Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Ahn, Byung Du [School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, K. B., E-mail: kbchung@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)

2014-10-20

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

Hydrogen passivation of polycrystalline Si thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Gorka, Benjamin

2010-12-15

Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application

Science.gov (United States)

Dwivedi, Neeraj; Kumar, Sushil; Dayal, Saurabh; Rauthan, C. M. S.; Panwar, O. S.; Malik, Hitendra K.

2012-10-01

In this work, self bias variation, nitrogen introduction and oxygen plasma (OP) treatment approaches have been used for tailoring the band gap of hydrogenated amorphous carbon (a-C:H) thin films. The band gap of a-C:H and modified a- C:H films is varied in the range from 1.25 eV to 3.45 eV, which is found to be nearly equal to the full solar spectrum (1 eV- 3.5 eV). Hence, such a-C:H and modified a-C:H films are found to be potential candidate for the development of full spectrum solar cells. Besides this, computer aided simulation with considering variable band gap a-C:H and modified a- C:H films as window layer for amorphous silicon p-i-n solar cells is also performed by AFORS-HET software and maximum efficiency as ~14 % is realized. Since a-C:H is hard material, hence a-C:H and modified a-C:H films as window layer may avoid the use of additional hard and protective coating particularly in n-i-p configuration.

Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Park, Hyun-Woo; Choi, Min-Jun; Jo, Yongcheol; Chung, Kwun-Bum, E-mail: kbchung@dongguk.edu

2014-12-01

Highlights: • We studied the low temperature process of InGaZnO oxide thin film transistor. • Hydorgen irradiation was used for low temperature process below 150 °C. • Using hydrogen irradiation, field effect mobility of IGZO TFT was enhanced to ∼5 cm{sup 2} /Vs. • We examined the origin of improvement of device performance via electronic structure. - Abstract: Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

Science.gov (United States)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Surface electronic properties of discontinuous Pd films during hydrogen exposure

International Nuclear Information System (INIS)

Zhao, Ming; Nagata, Shinji; Shikama, Tatsuo; Inouye, Aichi; Yamamoto, Shunya; Yoshikawa, Masahito

2011-01-01

This paper explored the change in the surface resistance of the discontinuous palladium (Pd) films during hydrogen exposure. In our experiments, we observed a remarkable rise in the electrical resistance of the discontinuous film which consists of nano-sized particles, when it was exposed to thin hydrogen. By studying the resistance change ratio before and after hydrogen exposure, we have found that it demonstrates an inverse exponential relationship with the ratio of on-film particle radius to the inter island separation. This suggests that the change in the film resistance under hydrogen exposure is primarily associated with the variation of surface work function which is caused by the hydrogen absorption on the Pd surface. (author)

Room temperature ferroelectricity in continuous croconic acid thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Duy Phong Pham

2014-01-01

Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.

Non-enzymatic hydrogen peroxide detection at NiO nanoporous thin film- electrodes prepared by physical vapor deposition at oblique angles

International Nuclear Information System (INIS)

Salazar, Pedro; Rico, Victor; González-Elipe, Agustín R.

2017-01-01

Highlights: • A non-enzymatic sensor for H 2 O 2 detection based on nickel thin film is reported. • Nanostructured nickel thin films are prepared by physical vapor deposition at oblique angles. • Main analytical parameters were obtained under optimal operation conditions. • Sensors depict an outstanding selectivity and a high stability. • Sensors are successfully used to determine H 2 O 2 in antiseptic solutions. - Abstract: In this work we report a non-enzymatic sensor for hydrogen peroxide (H 2 O 2 ) detection based on nanostructured nickel thin films prepared by physical vapor deposition at oblique angles. Porous thin films deposited on ITO substrates were characterized by X-ray diffraction analysis, scanning electron microcopy (SEMs), X-ray photoelectron spectroscopy (XPS) and electrochemical techniques such as Cyclic Voltammetry (CV) and Constant Potential Amperometry (CPA). The microstructure of the thin films consisted of inclined and separated Ni nanocolumns forming a porous thin layer of about 500 nm thickness. Prior to their use, the films surface was electrochemically modified and the chemical state studied by CV and XPS analysis. These techniques also showed that Ni 2+ /Ni 3+ species were involved in the electrochemical oxidation and detection of H 2 O 2 in alkaline medium. Main analytical parameters such as sensitivity (807 mA M −1 cm −2 ), limit of detection (3.22 μM) and linear range (0.011–2.4 mM) were obtained under optimal operation conditions. Sensors depicted an outstanding selectivity and a high stability and they were successfully used to determine H 2 O 2 concentration in commercial antiseptic solutions.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

Science.gov (United States)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Nanostructured hematite thin films for photoelectrochemical water splitting

Science.gov (United States)

Maabong, Kelebogile; Machatine, Augusto G. J.; Mwankemwa, Benard S.; Braun, Artur; Bora, Debajeet K.; Toth, Rita; Diale, Mmantsae

2018-04-01

Nanostructured hematite thin films prepared by dip coating technique were investigated for their photoelectrochemical activity for generation of hydrogen from water splitting. Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resolution field emission-scanning electron microscopy, UV-vis spectrophotometry and Raman spectroscopy. The photoelectrochemical measurements of the films showed enhanced photoresponse and cathodic shift of the onset potential upon Ti doping indicating improved transfer of photoholes at the semiconductor-electrolyte interface. Films doped with 1 at% Ti produced 0.72 mA/cm2 at 1.23 V vs RHE which is 2 times higher than current density for the pure film (0.30 mA/cm2, at 1.23 V vs RHE). Gas chromatography analysis of the films also showed enhanced hydrogen evolution at 1 at% Ti with respect to pure film.

Hydrogenation properties of pure magnesium and magnesium-aluminium thin films

Energy Technology Data Exchange (ETDEWEB)

Domenech-Ferrer, Roger; Gurusamy Sridharan, Madana; Garcia, Gemma; Pi, Francesc; Rodriguez-Viejo, Javier [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain)

2007-06-10

We have studied the hydrogenation/dehydrogenation behaviour of multilayered stacks of Pd/Mg/Pd and Pd-Fe(Ti)-Mg-Al-Mg-Fe(Ti)-Pd grown by electron beam physical vapour deposition. The palladium coating was deposited at both sides of the structure to ensure a fast dissociation rate and good transport properties for hydrogen as well as to avoid oxidation of magnesium either from atmosphere as from the substrate surface. Fe and Ti layers were included in the stack composition in order to assess their possible catalyst effect as well as to prevent the formation of Mg{sub x}Pd{sub y} intermetallics during the thermal treatments. We have studied the structure evolution after thermal treatments as well as after the hydrogenation and dehydrogenation processes using XRD. We have also followed the reactions kinetics by resistometry and differential scanning calorimetry. The nanostructured Mg films have been hydrogenated at temperature as low as 50 C in few minutes. Adding aluminium to magnesium has improved its hydrogenation capacity. We have also observed that the formation of an Mg{sub x}Al{sub y} intermetallic before hydrogenation improves the storage capacity. We have confirmed that titanium is a better catalyst for the hydrogenation/dehydrogenation of the Mg films. (author)

Selective inorganic thin films

Energy Technology Data Exchange (ETDEWEB)

Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

1995-05-01

This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

Gettering of carbon dioxide by erbium thin films

International Nuclear Information System (INIS)

Mehrhoff, T.K.

1980-01-01

The interaction of carbon dioxide and erbium thin films is characterized for temperatures in the region of 300 to 900 0 C and partial pressure of carbon dioxide near 5 x 10 -7 Torr. Dynamic film pumping speeds were measured against a mercury diffusion pump of known pumping speed and conductance. A quadrupole mass spectrometer was used to monitor the carbon dioxide flow which originated from a calibrated leak in the 10 -6 standard cm 3 /s range. Data reduction was via a dedicated minicomputer with associated printer/plotter. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C. The reaction was preceded by the desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface

Advances in copper-chalcopyrite thin films for solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

2010-01-15

Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas.

Science.gov (United States)

Fan, Zheng; Maurice, Jean-Luc; Chen, Wanghua; Guilet, Stéphane; Cambril, Edmond; Lafosse, Xavier; Couraud, Laurent; Merghem, Kamel; Yu, Linwei; Bouchoule, Sophie; Roca I Cabarrocas, Pere

2017-10-31

We present our systematic work on the in situ generation of In nanoparticles (NPs) from the reduction of ITO thin films by hydrogen (H 2 ) plasma exposure. In contrast to NP deposition from the vapor phase (i.e., evaporation), the ITO surface can be considered to be a solid reservoir of In atoms thanks to H 2 plasma reduction. On one hand, below the In melting temperature, solid In NP formation is governed by the island-growth mode, which is a self-limiting process because the H 2 plasma/ITO interaction will be gradually eliminated by the growing In NPs that cover the ITO surface. On the other hand, we show that above the melting temperature In droplets prefer to grow along the grain boundaries on the ITO surface and dramatic coalescence occurs when the growing NPs connect with each other. This growth-connection-coalescence behavior is even strengthened on In/ITO bilayers, where In particles larger than 10 μm can be formed, which are made of evaporated In atoms and in situ released ones. Thanks to this understanding, we manage to disperse dense evaporated In NPs under H 2 plasma exposure when inserting an ITO layer between them and substrate like c-Si wafer or glass by modifying the substrate surface chemistry. Further studies are needed for more precise control of this self-assembling method. We expect that our findings are not limited to ITO thin films but could be applicable to various metal NPs generation from the corresponding metal oxide thin films.

COVALENTLY ATTACHED MULTILAYER ULTRA-THIN FILMS FROM DIAZORESIN AND CALIXARENES

Institute of Scientific and Technical Information of China (English)

Zhao-hui Yang; Wei-xiao Cao

2003-01-01

A kind of photosensitive ultra-thin film was fabricated from diazoresin (DR) and various calixarenes by using the self-assembly technique. Under UV irradiation both the ionic- and hydrogen bonds between the layers of the film will convert into covalent bonds. As a result, the stability of the film toward polar solvents increases dramatically.

On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Qiu, Y.; Kunz, O.; Fejfar, Antonín; Ledinský, Martin; Teik Chan, B.; Gordon, I.; Van Gestel, D.; Venkatachalm, S.; Egan, R.

2014-01-01

Roč. 122, MAR (2014), s. 31-39 ISSN 0927-0248 R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional support: RVO:68378271 Keywords : silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.337, year: 2014 http://www.sciencedirect.com/science/article/pii/S0927024813006016

Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

International Nuclear Information System (INIS)

Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

2006-08-01

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

Energy Technology Data Exchange (ETDEWEB)

Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

2008-02-15

Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

Repulsive effects of hydrophobic diamond thin films on biomolecule detection

Energy Technology Data Exchange (ETDEWEB)

Ruslinda, A. Rahim, E-mail: ruslindarahim@gmail.com [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Jln Kgr-Alor Setar, Seriab, 01000 Kangar, Perlis (Malaysia); Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Ishiyama, Y. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Penmatsa, V. [Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States); Ibori, S.; Kawarada, H. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan)

2015-02-15

Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m.

Repulsive effects of hydrophobic diamond thin films on biomolecule detection

International Nuclear Information System (INIS)

Ruslinda, A. Rahim; Ishiyama, Y.; Penmatsa, V.; Ibori, S.; Kawarada, H.

2015-01-01

Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m

Free standing graphene oxide film for hydrogen peroxide sensing

Science.gov (United States)

Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

2018-05-01

We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

Energy Technology Data Exchange (ETDEWEB)

Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

2015-03-02

Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

International Nuclear Information System (INIS)

Rose, Franck; Wang, Na; Smith, Robert; Xiao, Qi-Fan; Dai, Qing; Marchon, Bruno; Inaba, Hiroshi; Matsumura, Toru; Saito, Yoko; Matsumoto, Hiroyuki; Mangolini, Filippo; Carpick, Robert W.

2014-01-01

We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamond-like carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 °C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp 3 fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp 2 clustering rather than hydrogen diffusion in the film.

Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Rose, Franck, E-mail: franck.rose@hgst.com; Wang, Na; Smith, Robert; Xiao, Qi-Fan; Dai, Qing; Marchon, Bruno [HGST, A Western Digital Company, San Jose Research Center, 3403, Yerba Buena Rd, San Jose, California 95135 (United States); Inaba, Hiroshi; Matsumura, Toru; Saito, Yoko; Matsumoto, Hiroyuki [HGST, A Western Digital Company, Japan Research Laboratory, 2880 Kozu, Odawara, Kanagawa 256-8510 (Japan); Mangolini, Filippo [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Carpick, Robert W. [Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6315 (United States)

2014-09-28

We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamond-like carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 °C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp³ fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp² clustering rather than hydrogen diffusion in the film.

Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

KAUST Repository

Vlček, Marián

2015-07-01

A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

KAUST Repository

Vlček, Mariá n; Luká č, František; Vlach, Martin; Prochá zka, Ivan; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid; Gemma, Ryota; Čí žek, Jakub

2015-01-01

A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

Energy Technology Data Exchange (ETDEWEB)

Tiggelaar, R.M. [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K. [Catalytic Processes and Materials, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Gardeniers, J.G.E., E-mail: j.g.e.gardeniers@utwente.nl [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-05-01

Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films evaporated on oxidized silicon and fused silica substrates with or without tantalum coating, which were subsequently exposed to different pretreatment atmospheres (vacuum, nitrogen, air and hydrogen; 1 h, 650 °C). Atomic force microscopy, scanning electron microscopy and energy dispersive X-ray analysis were used to characterize the films. Pretreated Ni films were subjected to a thermal catalytic chemical vapor deposition procedure with brief ethylene exposures (0.5–3 min, 635 °C). It was found that only on the spherical nanoparticles originating from a hydrogen pretreatment of a Ni film with Ta adhesion layer, homogeneously distributed, randomly-oriented, well-attached, and semi-crystalline carbon nanofibers be synthesized. - Highlights: • On the formation of nanoparticles required for carbon nanofiber (CNF) synthesis • Various evaporated thin films on oxidized silicon and fused silica: Ni and Ni/Ta • Pretreatment of nickel-based thin films in vacuum, nitrogen, air and hydrogen • Only on reduced Ni/Ta fast – within 3 min – initiation of CNF nucleation and growth.

Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

Directory of Open Access Journals (Sweden)

Kyung-Jong Noh

2012-01-01

Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis ...

Indian Academy of Sciences (India)

Administrator

Spray pyrolysis techniques; TiO2 thin films; hydrogen gas response. 1. Introduction ... tion is necessary during the production, storage and use of hydrogen. It is also ..... ient, and 'green': it may be used to large scale industrial application for ...

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Shin-Wei Liang

2013-01-01

Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

Optical approach to thermopower and conductivity measurements in thin-film semiconductors

International Nuclear Information System (INIS)

Dersch, H.; Amer, N.M.

1984-01-01

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD

Energy Technology Data Exchange (ETDEWEB)

Halindintwali, S., E-mail: shalindintwali@uwc.ac.za [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Khoele, J. [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Nemroaui, O. [Department of Mechatronics, Cape Peninsula University of Technology, P.O. Box 1906, Bellville 7535 (South Africa); Comrie, C.M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Materials Research Department, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Theron, C.C. [Physics Department, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa)

2015-04-15

Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-Si{sub 1−x}C{sub x}:H) thin films during a temperature ramp between RT and 600 °C was studied by in situ real-time elastic recoil detection analysis. Point to point contour maps show the hydrogen depth profile and its evolution with the ramped temperature. This paper proposes a diffusion limited evolution model to study H kinetic properties from total retained H contents recorded in a single ramp. In a compact a-Si:H layer where H predominantly effuses at high temperatures between 500 and 600 °C, an activation energy value of ∼1.50 eV and a diffusion pre-factor of 0.41 × 10{sup −4} cm{sup 2}/s were obtained. Applied to an non-stoichiometric a-Si{sub 1−x}C{sub x}:H film in the same range of temperature, the model led to reduced values of activation energy and diffusion prefactor of ∼0.33 eV and 0.59 × 10{sup −11} cm{sup 2}/s, respectively.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

Science.gov (United States)

Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

2017-12-01

The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

The kinetics of Cr layer coated on TiNi films for hydrogen absorption

Indian Academy of Sciences (India)

The effect of hydrogen absorption on electrical resistance with temperature for TiNi and TiNi–Cr thin films was investigated. The TiNi thin films of thickness 800 Å were deposited at different angles ( = 0°, 30°, 45°, 60° and 75°) under 10−5 Torr pressure by thermal evaporation on the glass substrate at room temperature.

Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

International Nuclear Information System (INIS)

Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

2004-01-01

Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

Thin film processes II

CERN Document Server

Kern, Werner

1991-01-01

This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

Reversible Surface Properties of Polybenzoxazine/Silica Nanocomposites Thin Films

Directory of Open Access Journals (Sweden)

Wei-Chen Su

2013-01-01

Full Text Available We report the reversible surface properties (hydrophilicity, hydrophobicity of a polybenzoxazine (PBZ thin film through simple application of alternating UV illumination and thermal treatment. The fraction of intermolecularly hydrogen bonded O–H⋯O=C units in the PBZ film increased after UV exposure, inducing a hydrophilic surface; the surface recovered its hydrophobicity after heating, due to greater O–H⋯N intramolecular hydrogen bonding. Taking advantage of these phenomena, we prepared a PBZ/silica nanocomposite coating through two simple steps; this material exhibited reversible transitions from superhydrophobicity to superhydrophilicity upon sequential UV irradiation and thermal treatment.

Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

International Nuclear Information System (INIS)

Eres, D.; Sharp, J.W.

1992-01-01

The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

Science.gov (United States)

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

2017-04-01

Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

Electronegativity-dependent tin etching from thin films

Energy Technology Data Exchange (ETDEWEB)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

Pyrolyzed thin film carbon

Science.gov (United States)

Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

Thin films deposited by laser ablation for the measurement of the ionizing and non-ionizing radiation

International Nuclear Information System (INIS)

Villarreal B, J.E.; Escobar A, L.; Camps, E.; Romero, S.; Gonzalez, P.; Salinas, B.

2001-01-01

In this work the obtained results to synthesize thin films of amorphous carbon with incorporated nitrogen and hydrogen are presented, as well as thin films of aluminium oxide using the laser ablation technique. The thin films were exposed to ionizing radiation (gamma rays of a 60 Co source, beta radiation of a 90 Sr source) and a non-ionizing radiation (UV radiation). The obtained results show that it is possible to obtain materials in thin film form with thickness of hundreds of nanometers, which present thermoluminescent response when being irradiated with ionizing radiation and non-ionizing radiation. (Author)

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

Directory of Open Access Journals (Sweden)

Mason L. Terry

2007-01-01

Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

Effects of composition and microstructure of Pd-Cu-Si metallic glassy alloy thin films on hydrogen absorbing properties

International Nuclear Information System (INIS)

Kajita, Susumu; Kohara, Shinji; Onodera, Yohei; Fukunaga, Toshiharu; Matsubara, Eiichiro

2011-01-01

Thin films of Pd-Cu-Si metallic glassy alloys for a hydrogen sensor were fabricated by a sputtering method. In order to find out the effect of the composition and the microstructure of them on the hydrogen absorbing property (the H 2 response), the structural parameters based on the short-range order (SRO) were measured. Additionally, the change of the structural parameters with hydrogen absorption was measured, and the correlations of the change with the H 2 response and the hydrogen induced linear expansion coefficient (LEC) were examined. The H 2 response decreased with increases in Si content and the structural parameters. These results can be explained by the positive effects of Si content and the structural parameters on the formation of a trigonal prism which is a structural unit of Pd-based amorphous alloys, and by the negative effect of the trigonal prism on absorbing hydrogen. From the observation of the elongation of the Pd-Pd atomic distance with absorbing hydrogen, H atoms are supposed to occupy the space between Pd atoms. The amount of the change in the Pd-Pd atomic distance showed the positive correlations with the H 2 response and the LEC. (author)

Multiple bandgap combination of thin film photovoltaic cells and a photoanode for efficient hydrogen and oxygen generation by water splitting

Energy Technology Data Exchange (ETDEWEB)

Avachat, Upendra S.; Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center (FSEC), University of Central Florida 1679 Clearlake Road, Cocoa, FL, 32922-5703 (United States)

2006-09-22

The objective of this research is to develop cheaper and more efficient photoelectrochemical (PEC) cells for the production of highly pure hydrogen and oxygen by water splitting. FSEC PV Materials Lab has developed PEC set up consisting of two thin film photovoltaic (PV) cells, a RuS{sub 2} photoanode for efficient oxygen evolution and a platinum cathode for hydrogen evolution. A p-type transparent-conducting layer is prepared at the back of PV cell to transmit unabsorbed infrared photons onto the photoanode for efficient oxygen evolution. This paper presents the preparation and characterization of p- type ZnTe:Cu transparent conducting back layer and PEC cell. (author)

Internal stress control of boron thin film

Energy Technology Data Exchange (ETDEWEB)

Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M. [Osaka Univ., Suita (Japan). Graduate Sch. of Eng.

1998-09-01

The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s{sup -1} and substrate temperature of 300 C. (orig.) 12 refs.

Internal stress control of boron thin film

International Nuclear Information System (INIS)

Satomi, N.; Kitamura, M.; Sasaki, T.; Nishikawa, M.

1998-01-01

The occurrence of stress in thin films has led to serious stability problems in practical use. We have investigated the stress in the boron films to find the deposition condition of the boron films with less stress. It was found that the stress in the boron film varies sufficiently from compressive to tensile stress, that is from -1.0 to 1.4 GPa, depending on the evaporation conditions, such as deposition rate and the substrate temperature. Hydrogen ion bombardment resulted in the enhancement of the compressive stress, possibly due to ion peening effect, while under helium ion bombardment, stress relief was observed. The boron film with nearly zero stress was obtained by the evaporation at a deposition rate of 0.5 nm s -1 and substrate temperature of 300 C. (orig.)

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

2015-01-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10 −2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R RMS of ∼0.4 nm

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

Spin-wave resonances and surface spin pinning in Ga1-xMnxAs thin films

Science.gov (United States)

Bihler, C.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2009-01-01

We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process

International Nuclear Information System (INIS)

Goktas, O.; Isik, N.; Okur, S.; Gunes, M.; Carius, R.; Klomfass, J.; Finger, F.

2006-01-01

Hydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Science.gov (United States)

Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

2018-03-01

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

Development of thin-film Si HYBRID solar module

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

2009-06-15

The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

Effects of oxygen partial pressure on structural and gasochromic properties of sputtered VOx thin films

Energy Technology Data Exchange (ETDEWEB)

Jang, Wei-Luen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Lu, Yang-Ming [Department of Electrical Engineering, National University of Tainan, Tainan 70005, Taiwan (China); Lu, Ying-Rui [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Program for Science and Technology of Accelerator Light Source, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Chi-Liang [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Dong, Chung-Li, E-mail: dong.cl@nsrrc.org.tw [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Jeng-Lung; Chan, Ting-Shan; Lee, Jyh-Fu; Pao, Chih-Wen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-10-01

VOx films were deposited by radio-frequency reactive magnetron sputtering from a vanadium target in an Ar–O{sub 2} gas mixture and pure O{sub 2}. For the films deposited in the gas mixture, the Ar flow rate was controlled at 20 sccm and the oxygen flow rate was controlled at 1, 3, and 5 sccm, respectively. A thin (∼ 5 nm) Pt layer was deposited on the VOx thin films as a hydrogen catalyst. The long-range structural order, short-range atom arrangement, and gasochromic properties of the deposited films were studied. The grazing incidence X-ray diffraction (GIXRD) results indicate that the deposited films are amorphous. Lamellar structures were found at oxygen flow rates of 3 sccm and above. The X-ray absorption spectroscopy (XAS) results show that the short-range atom arrangement of the lamellar VOx thin films is similar to that of crystal V{sub 2}O{sub 5}. The GIXRD and XAS results show that the film obtained with the gas mixture and at an oxygen flow rate of 1 sccm did not significantly change after exposure to hydrogen, whereas the other films exhibited decreased interlayer distance, oxidation state, and crystallinity. The color of the films changed from light or deep yellow to gray. The results suggest that the gasochromic properties of the VOx thin films are related to the V{sub 2}O{sub 5}-like atom arrangement and the interlayer distance of the lamellar structure. The films deposited with an oxygen flow rate of 3 sccm and above can be applied to H{sub 2} gas sensors. - Highlights: • Sputtered VOx film capped by Pt have potential for application in hydrogen sensor. • We present the X-ray absorption spectroscopy study of the gasochromic VOx films. • Correlation of gasochromism and electronic structure of VOx film were studied. • Correlation of gasochromism and atomic structure were investigated.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Science.gov (United States)

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

2014-01-01

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Fang-Hsing Wang

2014-02-01

Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

Science.gov (United States)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

Ceramic Composite Thin Films

Science.gov (United States)

Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Effect of hydrogen on stresses in anodic oxide film on titanium

International Nuclear Information System (INIS)

Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

2003-01-01

Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

Evidence of Plasmonic Induced Photocatalytic Hydrogen Production on Pd/TiO2 Upon Deposition on Thin Films of Gold

KAUST Repository

Khan, M. A.

2017-02-28

H2-production from renewables using sunlight is probably the holy grail of modern science and technology. Among the many approaches for increasing reaction rates, by increasing light absorption, plasmonic materials are often invoked. Yet, most plasmonic metals on semiconductors are also good for Schottky barrier formation. In this work, we are presenting evidences of de-coupling the plasmonic from Schottky effects on photoreaction. To conduct this we have systematically changed the under-layer gold film thickness and associated particle size. On top of the thin film layer, we have deposited the exact amount of a prototypical Schottky-based photo-catalyst (Pd/TiO2). We found up to 4 times increase in the H2-production rate at a critical Au film thickness (8 nm-thick). Below this thickness, the plasmonic response is not too strong while above it, the PR decays in favor of the Drude absorption mode. The reaction requires the presence of both UV (to excite the semiconductor) and visible light (to excite Au particles) in order to obtain high hydrogen production, 800 µmol/gCatal.min (probably the highest direct hydrogen (not current) production rate reported on a performing catalyst). The enhancement origin is quantitatively traced to its computed electric field strength (EFS). Adding a dielectric (SiO2) in between the Au thin layer and the catalyst exponentially decreased the reaction rate and EFS, with increasing its thickness. This work indicates the possibility of making an active and stable photo-catalyst from fundamental concepts yet further progress on the structural (technological) front is needed to make a practical catalyst.Graphical abstract

Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

Energy Technology Data Exchange (ETDEWEB)

Vesel, Alenka, E-mail: alenka.vesel@guest.arnes.si [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Mozetic, Miran [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Balat-Pichelin, Marianne [PROMES-CNRS Laboratory, 7 Rue du four solaire, 66120 Font Romeu Odeillo (France)

2016-11-30

Highlights: • Oxidized Inconel alloy was exposed to hydrogen at temperatures up to 1500 K. • Oxide reduction in hydrogen plasma started at approximately 1300 K. • AES depth profiling revealed complete reduction of oxides in plasma. • Oxides were not reduced, if the sample was heated just in hydrogen atmosphere. • Surface of reduced Inconel preserved the same composition as the bulk material. - Abstract: Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

Disorder improves nanophotonic light trapping in thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5—Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut für Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

2014-03-31

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500 nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500 nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

International Nuclear Information System (INIS)

Gasgnier, M.

1980-01-01

The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

Host thin films incorporating nanoparticles

Science.gov (United States)

Qureshi, Uzma

The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

Analysis of the crystalline characteristics of nc-Si:H thin film using a hyperthermal neutral beam generated by an inclined slot-excited antenna

Energy Technology Data Exchange (ETDEWEB)

Park, Jong-Bae; Kim, Young-Woo; Kim, Dae Chul; Kim, Jongsik; Hong, Seung Pyo; Yoo, Suk Jae; Oh, Kyoung Suk, E-mail: ksoh@nfri.re.kr

2013-11-29

The deposition of hydrogenated nano-crystal silicon (nc-Si:H) thin film for manufacturing quantum dot solar cells, which has received attention due to the use of this film third-generation solar cells, is studied here. A hyperthermal neutral beam (HNB) generated by an inclined slot-excited antenna plasma source is used to reduce damage to the silicon thin film and deposition of the crystalline thin film is carried out on a substrate at a low temperature (< 200 °C). The size and the crystalline fraction of the nc-Si:H of the deposited thin film were analyzed by scanning transmission electron microscopy and a Raman microscope. As a result, silicon crystals 1–10 nm in size were observed in the amorphous silicon matrix. According to previous studies, the size and the crystalline fraction of nc-Si:H in deposited thin films increase as the hydrogen flow rate is increased. However, the increment of hydrogen flow rate decreases the deposition rate rapidly. The size and the crystalline fraction of nc-Si:H are adjustable by varying the substrate temperature and HNB energy without a change of the hydrogen flow rate. There are optimum conditions between the HNB energy and the substrate temperature for an appropriate amount of nc-Si:H in silicon thin film. - Highlights: • The appropriate hyperthermal neutral beam energy seems to assist film formation. • The Si crystal size can be adjusted by varying hyperthermal neutral beam energy. • The nc-Si:H 1 ∼ 10 in nm size was observed in the amorphous silicon matrix.

Gettering of carbon dioxide by erbium thin films

International Nuclear Information System (INIS)

Mehrhoff, T.K.

1980-01-01

The interaction of carbon dioxide and erbium thin films is characterized at 300 to 900 0 C and 5 x 10 -7 torr. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C, preceded by desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface. The sticking coefficients were plotted as a function of Langmuirs of carbon dioxide exposure. Between 400 and 600 0 C, the length of the exposure was found to be more important than the temperature of the exposure in determining the sticking coefficient. Some evolution of carbon monoxide was noted particularly in the 400 to 500 0 C region. An 80% conversion of carbon dioxide to carbon monoxide was measured at 500 0 C. The film pumping speeds were compared with published vapor pressure data for erbium. This comparison indicated that a significant portion of the pumping action observed at temperatures of 800 0 C and above was due to evaporation of erbium metal

NMR characterization of thin films

Science.gov (United States)

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

Science.gov (United States)

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Energy Technology Data Exchange (ETDEWEB)

Liu, Yong [Iowa State Univ., Ames, IA (United States)

2002-01-01

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H₂, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

Handbook of thin film technology

CERN Document Server

Frey, Hartmut

2015-01-01

“Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

International Nuclear Information System (INIS)

Gupta, P.; Becker, H.-W.; Williams, G.V.M.; Hübner, R.; Heinig, K.-H.; Markwitz, A.

2017-01-01

Highlights: • This paper reports for the first time redistribution of hydrogen atoms in diamond like carbon thin films during ion implantation of low energy magnetic ions. • The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. • Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. - Abstract: Hydrogenated diamond-like carbon films produced by C_3H_6 deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of ∼35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications.

Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

Energy Technology Data Exchange (ETDEWEB)

Gupta, P. [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Becker, H.-W. [RUBION, Ruhr-University Bochum (Germany); Williams, G.V.M. [The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Hübner, R.; Heinig, K.-H. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany); Markwitz, A., E-mail: a.markwitz@gns.cri.nz [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand)

2017-03-01

Highlights: • This paper reports for the first time redistribution of hydrogen atoms in diamond like carbon thin films during ion implantation of low energy magnetic ions. • The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. • Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. - Abstract: Hydrogenated diamond-like carbon films produced by C{sub 3}H{sub 6} deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of ∼35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications.

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

International Nuclear Information System (INIS)

Watanabe, S.

1984-01-01

The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

Science.gov (United States)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Photoelectrochemical hydrogen production from water/methanol decomposition using Ag/TiO{sub 2} nanocomposite thin films

Energy Technology Data Exchange (ETDEWEB)

Alenzi, Naser; Ehlig-Economides, Christine [Harold Vance Department of Petroleum Engineering, Texas A and M University, College Station, TX 77843 (United States); Liao, Wei-Ssu; Cremer, Paul S. [Department of Chemistry, Texas A and M University, College Station, TX 77843 (United States); Sanchez-Torres, Viviana; Cheng, Zhengdong [Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Wood, Thomas K. [Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Department of Biology, Texas A and M University, College Station, TX 77843-3258 (United States); Zachry Department of Civil and Environmental Engineering, Texas A and M University, College Station, TX 77843 3136 (United States)

2010-11-15

Though less frequently studied for solar-hydrogen production, films are more convenient to use than powders and can be easily recycled. Anatase TiO{sub 2} films decorated with Ag nanoparticles are synthesized by a rapid, simple, and inexpensive method. They are used to cleave water to produce H{sub 2} under UV light in the presence of methanol as a hole scavenger. A simple and sensitive method is established here to monitor the time course of hydrogen production for ultralow amounts of TiO{sub 2}. The average hydrogen production rate of Ag/TiO{sub 2} anatase films is 147.9 {+-} 35.5 {mu}mol/h/g. Without silver, it decreases dramatically to 4.65 {+-} 0.39 {mu}mol/h/g for anatase TiO{sub 2} films and to 0.46 {+-} 0.66 {mu}mol/h/g for amorphous TiO{sub 2} films fabricated at room temperature. Our method can be used as a high through-put screening process in search of high efficiency heterogeneous photocatalysts for solar-hydrogen production from water-splitting. (author)

Hydrogen content and density in nanocrystalline carbon films of a predominant diamond character

International Nuclear Information System (INIS)

Hoffman, A.; Heiman, A.; Akhvlediani, R.; Lakin, E.; Zolotoyabko, E.; Cyterman, C.

2003-01-01

Nanocrystalline carbon films possessing a prevailing diamond or graphite character, depending on substrate temperature, can be deposited from a methane hydrogen mixture by the direct current glow discharge plasma chemical vapor deposition method. While at a temperature of ∼880 deg. C, following the formation of a thin precursor graphitic film, diamond nucleation occurs and a nanodiamond film grows, at higher and lower deposition temperatures the films maintain their graphitic character. In this study the hydrogen content, density and nanocrystalline phase composition of films deposited at various temperatures are investigated. We aim to elucidate the role of hydrogen in nanocrystalline films with a predominant diamond character. Secondary ion mass spectroscopy revealed a considerable increase of the hydrogen concentration in the films that accompanies the growth of nanodiamond. It correlates with near edge x-ray adsorption spectroscopy measurements, that showed an appearance of spectroscopic features associated with the diamond structure, and with a substantial increase of the film density detected by x-ray reflectivity. Electron energy loss spectroscopy showed that nanocrystalline diamond films can be deposited from a CH 4 /H 2 mixture with hydrogen concentration in the 80%-95% range. For a deposition temperature of 880 deg. C, the highest diamond character of the films was found for a hydrogen concentration of 91% of H 2 . The deposition temperature plays an important role in diamond formation, strongly influencing the content of adsorbed hydrogen with an optimum at 880 deg. C. It is suggested that diamond nucleation and growth of the nanodiamond phase is driven by densification of the deposited graphitic films which results in high local compressive stresses. Nanodiamond formation is accompanied by an increase of hydrogen concentration in the films. It is suggested that hydrogen retention is critical for stabilization of nanodiamond crystallites. At lower

A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

Energy Technology Data Exchange (ETDEWEB)

Vandentop, G.J.

1990-07-01

Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

Hydrogen retention properties of lithium film

International Nuclear Information System (INIS)

Kanaya, Koh; Yamauchi, Yuji; Hirohata, Yuko; Hino, Tomoaki; Mori, Kintaro

1998-01-01

Hydrogen retention properties of Li films and lithium oxide-lithium hydroxide (Li 2 O-LiOH) mixed films were investigated by two methods, hydrogen ion irradiation and hydrogen glow discharge. In a case of the hydrogen ion irradiation, thermal desorption spectrum of hydrogen retained in Li 2 O-LiOH film had two desorption peaks at around 470 K and 570 K. The ratio between retained hydrogen and Li atom was about 0.7. In a case of the hydrogen glow discharge, the hydrogen was also gettered in Li film during the discharge. The ratio of H/Li was almost 0.9. Most of gettered hydrogen desorbed by a baking with a temperature of 370 K. On the contrary, when the Li film exposed to the atmosphere was irradiated by the hydrogen plasma, the desorption of H 2 O was observed in addition to the adsorption of H 2 . (author)

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

International Nuclear Information System (INIS)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

2014-01-01

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N 2 atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Energy Technology Data Exchange (ETDEWEB)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

2014-04-28

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

International Nuclear Information System (INIS)

Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

2007-01-01

An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

Energy Technology Data Exchange (ETDEWEB)

Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

2009-03-15

In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

Science.gov (United States)

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Semipermeable thin-film membranes comprising siloxane, alkoxysilyl and aryloxysilyl oligomers and copolymers

Science.gov (United States)

Babcock, Walter C.; Friesen, Dwayne T.

1988-01-01

Novel semiperimeable membranes and thin film composite (TFC) gas separation membranes useful in the separation of oxygen, nitrogen, hydrogen, water vapor, methane, carbon dioxide, hydrogen sulfide, lower hydrocarbons, and other gases are disclosed. The novel semipermeable membranes comprise the polycondensation reaction product of two complementary polyfunctional compounds, each having at least two functional groups that are mutually reactive in a condensation polymerization reaction, and at least one of which is selected from siloxanes, alkoxsilyls and aryloxysilyls. The TFC membrane comprises a microporous polymeric support, the surface of which has the novel semipermeable film formed thereon, preferably by interfacial polymerization.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

International Nuclear Information System (INIS)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita

2016-01-01

In this work, Pd:NiFe 2 O 4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe 2 O 4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe 2 O 4 nanoparticle thin film were fabricated. • Pd incorporation in NiFe 2 O 4 matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe 2 O 4 thin film sensor displays excellent long–term stability.

The kinetics of Cr layer coated on TiNi films for hydrogen absorption

Indian Academy of Sciences (India)

Abstract. The effect of hydrogen absorption on electrical resistance with temperature ... pressure by thermal evaporation on the glass substrate at room temperature. ... and charging rate becomes faster in comparison to FeTi and TiNi thin films.

Effects of thin films on inventory, permeation and re-emission of energetic hydrogen

International Nuclear Information System (INIS)

Ohyabu, N.; Nakamura, Y.; Nakahara, Y.; Livshits, A.; Alimov, V.; Busnyuk, A.; Notkin, M.; Samartsev, A.; Doroshin, A.

2000-01-01

A non-metallic coating thicker than the implantation depth may protect a metal against tritium retention and permeation. However, a thinner film has quite the opposite effect: a dramatic increase of permeation and retention, and a corresponding suppression of re-emission. In view of the benefits expected from particle control with a superpermeable membrane placed right inside the divertor, the behavior of a Nb sample was investigated in a plasma-membrane device having a graphite target. Even polyatomic carbide coating was found not to hinder hydrogen absorption and permeation. Polyatomic non-carbide C films effectively inhibits it, but the formation of such films depends on H and C fluxes, H energy and metal temperature. A durable isolation of suprathermal hydrogen with the superpermeable membrane was observed at a high enough ratio between H and C fluxes, and the effects of carbon were found to have a non-monotonic temperature dependence

Wetting phenomena in films of molecular hydrogen isotopes

International Nuclear Information System (INIS)

Albrecht, U.; Conradt, R.; Herminghaus, S.; Leiderer, P.

1996-01-01

We have investigated various aspects of the wetting behavior of hydrogen films (including the heavier isotopes) using surface plasmon resonance, light scattering, and photoelectron emission. Studies in the vicinity of the triple point (T 3 (H 2 )=13,96 K) confirmed the known >, and gave no indications for a prewetting transition in this range. At low temperatures (T 3 /3) the equilibrium film thickness reaches only a few monolayers. Thicker films, prepared by quench-condensation of H 2 gas at 1.5 K, undergo a dewetting process during annealing: most of the film material contracts to clusters, and in between the films thins down to its equilibrium thickness. This surface diffusion process is thermally activated, with an activation energy of 23 K (in the case of H 2 ). The dewetting kinetics has not revealed any indication for a surface-molten layer on the solid films at low temperatures, or for a superfluid component

Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

Science.gov (United States)

Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

2017-09-01

In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

Thin film device applications

CERN Document Server

Kaur, Inderjeet

1983-01-01

Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

Biomimetic thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Graff, G.L.; Campbell, A.A.; Gordon, N.R.

1995-05-01

The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Yen-Tang Huang

2014-01-01

Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov (United States)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

NARCIS (Netherlands)

Verkerk, A.D.|info:eu-repo/dai/nl/304831719

2009-01-01

To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

Electrodeposition of thin Pd-Ag films

International Nuclear Information System (INIS)

Hasler, P.; Allmendinger, T.

1993-01-01

Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

Czech Academy of Sciences Publication Activity Database

Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

2016-01-01

Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

Thin Film & Deposition Systems (Windows)

Data.gov (United States)

Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

In-situ study of hydriding kinetics in Pd-based thin film systems

Energy Technology Data Exchange (ETDEWEB)

Delmelle, Renaud; Proost, Joris [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium). Div. of Materials and Process Engineering

2010-07-01

The hydriding kinetics of Pd thin films has been investigated in detail. The key experimental technique used in this work consists of a high resolution curvature measurement setup, which continuously monitors the reflections of multiple laser beams coming off a cantilevered sample. After mounting the sample inside a vacuum chamber, a H-containing gas mixture is introduced to instantaneously generate a given hydrogen partial pressure (p{sub H2}) inside the chamber. The resulting interaction of H with the Pd layer then leads to a volume expansion of the thin film system. This induces in turn changes in the sample curvature as a result of internal stresses developing in the Pd film during a hydriding cycle. Based on such curvature date obtained in-situ at different p{sub H2}, a two-step model for the kinetics of Pd-hydride formation has been proposed and expressions for the hydrogen adsorption and absorption velocities have been derived. The rate-limiting steps have been identified by studying the p{sub H2}-dependence of these velocities. Furthermore, from our in-situ experimental data, relevant kinetic parameters have been calculated. The effect of dry air exposure of the Pd films on the hydriding kinetics has been considered as well. (orig.)

Solid phase epitaxial growth of high mobility La:BaSnO_3 thin films co-doped with interstitial hydrogen

International Nuclear Information System (INIS)

Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Moram, Michelle A.; Ide, Keisuke; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

2016-01-01

This work presents the solid phase epitaxial growth of high mobility La:BaSnO_3 thin films on SrTiO_3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO_3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm"2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO_3 thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO_3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO_3 thin films were increased to 3 × 10"1"9" cm"−"3 and in La:BaSnO_3 thin films from 6 × 10"1"9" cm"−"3 to 1.5 × 10"2"0" cm"−"3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO_3 electron effective mass of 0.27 ± 0.05 m_0 and an optical mobility of 26 ± 7 cm"2/Vs. As compared to La:BaSnO_3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO_3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

Deposition techniques for the preparation of thin film nuclear targets

International Nuclear Information System (INIS)

Muggleton, A.H.F.

1987-07-01

This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

Characterization of organic thin films

CERN Document Server

Ulman, Abraham; Evans, Charles A

2009-01-01

Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

International Nuclear Information System (INIS)

Oh, Teresa; Oh, Kyoung Suk; Lee, Kwang-Man; Choi, Chi Kyu

2004-01-01

The amorphous structure of organic-inorganic hybrid type Si-O-C thin films was studied using the first principles molecular-dynamics method with density functional techniques. The correlation between the dielectric constant and the degree of amorphous structure in organic-inorganic hybrid type Si-O-C thin films was studied. Si-O-C thin films were deposited by high-density plasma chemical vapor deposition using bis-trimethylsilylmethane and oxygen precursors. As-deposited films and films annealed at 500 deg. C were analyzed by X-ray diffraction (XRD). For quantitative analysis, the X-ray diffraction patterns of the samples were transformed to the radial distribution function (RDF) using Fourier analysis. Hybrid type Si-O-C thin films can be divided into three types using their amorphous structure and the dielectric constant: those with organic, hybrid, and inorganic properties

Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

International Nuclear Information System (INIS)

Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo

2006-01-01

An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

NARCIS (Netherlands)

Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

2012-01-01

Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

Self-Limited Growth in Pentacene Thin Films.

Science.gov (United States)

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of thin film poly-crystalline solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Research and development has been performed on a high throughput forming technology and a modularization technology for thin film poly-crystalline solar cell modules. This paper summarizes the achievements in fiscal 1999. In developing the high throughput forming technology for a high-quality thin film, research has been made on a low-cost VEST process to re-utilize substrates by separating the thin film from the substrate. In the melting re-crystallization process, it was discovered that plasticity deformation of the substrate can be reduced greatly by raising the substrate heating temperatures. It was also found out that substrate warping amount can be reduced to about one-fifth of the conventional amount by making the thickness greater than 1.5 mm and raising the heating temperatures higher than 1300 degree C. In developing the thin film modularization technology, it was indicated that the property improving effect remains the same even if the hydrogen passivation method is changed from the hydrogen ion injection to the hydrogen plasma processing. In the trial fabrication of the thin film modules, a conversion efficiency of 13.1% was achieved in nine-cell structured modules. (NEDO)

Facile green synthesis of silver nanodendrite/cellulose acetate thin film electrodes for flexible supercapacitors.

Science.gov (United States)

Devarayan, Kesavan; Park, Jiyoung; Kim, Hak-Yong; Kim, Byoung-Suhk

2017-05-01

In this study, we present a highly efficient and economical solution called as 'in situ hydrogenation' for preparation of highly conductive thin film electrode based on silver nanodendrites. The silver nanodendrite (AgND)/cellulose acetate (CA) thin film electrodes exhibited sheet resistance ranging from 0.32ohm/sq to 122.1ohm/sq which could be controlled by changing the concentration of both silver and polymer. In addition, these electrodes exhibited outstanding toughness during the bending test. Further, these thin film electrodes have great potential for scale-up with an average weight of 3mg/cm 2 and can be also combined with active nanomaterials such as multiwalled carbon nanotubes (MWCNTs) to fabricate AgND/CA/MWCNTs thin film for high-performance flexible supercapacitor electrode. The AgND/CA/MWCNTs electrodes exhibited a maximum specific capacitance of 237F/g at a current density of 0.3A/g. After 1000 cycles, the AgND/MWCNT/CA exhibited a decrease of 16.0% of specific capacitance. Copyright © 2017 Elsevier Ltd. All rights reserved.

Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

Directory of Open Access Journals (Sweden)

J. Santos Cruz

2013-01-01

Full Text Available Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of 13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

The effect of solvent upon molecularly thin rotaxane film formation

Energy Technology Data Exchange (ETDEWEB)

Farrell, Alan A. [Nanoscale Function Group, Centre for Research on Adaptive Nanostructures and Nanodevices, University of Dublin, Trinity College, Dublin 2 (Ireland)]. E-mail: farrelaa@tcd.ie; Kay, Euan R. [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Bottari, Giovanni [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Leigh, David A. [School of Chemistry, University of Edinburgh, The King' s Buildings, West Mains Road, Edinburgh EH9 3 JJ (United Kingdom); Jarvis, Suzanne P. [Nanoscale Function Group, Centre for Research on Adaptive Nanostructures and Nanodevices, University of Dublin, Trinity College, Dublin 2 (Ireland)

2007-05-15

We have investigated variations in molecularly thin rotaxane films deposited by solvent evaporation, using atomic force microscopy (AFM). Small changes in rotaxane structure result in significant differences in film morphology. The addition of exo-pyridyl moietes to the rotaxane macrocycle results in uniform domains having orientations corresponding to the underlying substrate lattice, while a larger, less symmetric molecule results in a greater lattice mismatch and smaller domain sizes. We have measured differences in film heights both as a function of the solvent of deposition and as a function of surface coverage of rotaxanes. Based on these observations we describe how the use of solvents with higher hydrogen-bond basicity results in films which are more likely to favour sub-molecular motion.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Science.gov (United States)

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Analysis of Hard Thin Film Coating

Science.gov (United States)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films

International Nuclear Information System (INIS)

Guivarc'h, A.; Le Contellec, M.; Richard, J.; Ligeon, E.; Fontenille, J.; Danielou, R.

1980-01-01

The 1 H( 11 B, α)αα nuclear reaction is used to determine the H content and the density of amorphous semiconductor Si 1 -sub(x)Csub(x)H 2 and SiHsub(z) thin films. Rutherford backscattering is used to determine the x values and infrared transmission to study the hydrogen bonds. We have observed a transfer or/and a release of hydrogen under bombardment by various ions and we show that this last effect must be taken into account for a correct determination of the hydrogen content. An attempt is made to correlate the hydrogen release with electronic and nuclear energy losses. (orig.)

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov (United States)

Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas

International Nuclear Information System (INIS)

Takeda, Satoshi; Fukawa, Makoto

2004-01-01

The effects of water partial pressure (P H 2 O ) on electrical and optical properties of Ga-doped ZnO films grown by DC magnetron sputtering were investigated. With increasing P H 2 O , the resistivity (ρ) of the films grown in pure Ar gas (Ar-films) significantly increased due to the decrease in both free carrier density and Hall mobility. The transmittance in the wavelength region of 300-400 nm for the films also increased with increasing P H 2 O . However, no significant P H 2 O dependence of the electrical and optical properties was observed for the films grown in H 2 /Ar gas mixture (H 2 /Ar-films). Secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) analysis revealed that hydrogen concentration in the Ar-films increased with increasing P H 2 O and grain size of the films decreases with increasing the hydrogen concentration. These results indicate that the origin of the incorporated hydrogen is attributed to the residual water vapor in the coating chamber, and that the variation of ρ and transmittance along with P H 2 O of the films resulted from the change in the grain size. On the contrary, the hydrogen concentration in H 2 /Ar-films was almost constant irrespective of P H 2 O and the degree of change in the grain size of the films versus P H 2 O was much smaller than that of Ar-films. These facts indicate that the hydrogen primarily comes from H 2 gas and the adsorption species due to H 2 gas preferentially adsorb to the growing film surface over residual water vapor. Consequently, the effects of P H 2 O on the crystal growth are reduced

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Methanol Adsorption and Reaction on Samaria Thin Films on Pt(111

Directory of Open Access Journals (Sweden)

Jin-Hao Jhang

2015-09-01

Full Text Available We investigated the adsorption and reaction of methanol on continuous and discontinuous films of samarium oxide (SmOx grown on Pt(111 in ultrahigh vacuum. The methanol decomposition was studied by temperature programmed desorption (TPD and infrared reflection absorption spectroscopy (IRRAS, while structural changes of the oxide surface were monitored by low-energy electron diffraction (LEED. Methanol dehydrogenates to adsorbed methoxy species on both the continuous and discontinuous SmOx films, eventually leading to the desorption of CO and H2 which desorbs at temperatures in the range 400–600 K. Small quantities of CO2 are also detected mainly on as-prepared Sm2O3 thin films, but the production of CO2 is limited during repeated TPD runs. The discontinuous film exhibits the highest reactivity compared to the continuous film and the Pt(111 substrate. The reactivity of methanol on reduced and reoxidized films was also investigated, revealing how SmOx structures influence the chemical behavior. Over repeated TPD experiments, a SmOx structural/chemical equilibrium condition is found which can be approached either from oxidized or reduced films. We also observed hydrogen absence in TPD which indicates that hydrogen is stored either in SmOx films or as OH groups on the SmOx surfaces.

Gasochromic performance of WO3-nanorod thin films fabricated with an ArF excimer laser

International Nuclear Information System (INIS)

Yaacob, M. H.; Ou, J. Z.; Wlodarski, W.; Kim, C. S.; Lee, J. Y.; Kim, Y. H.; Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H.

2012-01-01

Thin films with tungsten trioxide (WO 3 ) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H 2 ) gas was investigated for a WO 3 film coated with 25-A-thick palladium (Pd). The Pd/WO 3 -nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H 2 concentration was clearly sensed. A significant reversible absorbance change and fast recovery ( 2 at different concentrations.

Effect of PECVD deposition parameters on structural and optoelectronics properties of hydrogenated polymorphous silicon thin films deposited by dichlorosilane for implementation in solar cells

International Nuclear Information System (INIS)

Álvarez-Macías, C.; Hernández González, Oscar Daniel; Barrera Calva, Enrique; Gómez González, L.; Santana, G.

2015-01-01

Hydrogenated polymorphous silicon (pm-Si: H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD) using SiH2Cl2 as precursor gas. We examine the effect of deposition pressure (250 y 500 mTorr) and H2 dilution (flow rates 25, 50, 75 y 100 sccm) on the structural and optoelectronics properties. The nano-structural properties was confirmed by Raman spectroscopy studies in terms of the changes in crystallite sizes and their volume fractions. On the other hand, by FTIR analysis we notice bond configurations associated to photostability of the nanostructures, which was confirmed by Light soaking experiments during 250h. We found a tunable band gap and important behaviors on the electronic transport properties measurements for samples with high and low incorporation of oxygen whose compositions were determined by XPS measurements. Understanding structural and chemical properties of pm- Si: H thin films is key towards optimizing their electrical and optical properties for applications in solar cells. (full text)

Thin-thick hydrogen target for nuclear physics

Energy Technology Data Exchange (ETDEWEB)

Gheller, J.-M.; Juster, F.-P.; Authelet, G. [CEA Saclay, Irfu/SACM, F-91191 Gif-Sur-Yvette cedex (France); Vinyar, I. [PELIN Limited Liability Company 27 A, Gzhatskaya Str, office 103 St. Petersbourg 195220 (Russian Federation); Relland, J. [CEA Saclay, Irfu/SIS, F-91191 Gif-Sur-Yvette cedex (France); Commeaux, C. [Institut de Physique Nucléaire, campus Universitaire-Bat 103, 91406 Orsay cedex (France)

2014-01-29

In spectroscopic studies of unstable nuclei, hydrogen targets are of key importance. The CHyMENE Project aims to provide to the nuclear physics community a thin and pure solid windowless hydrogen or deuterium target. CHyMENE project must respond to this request for the production of solid Hydrogen. The solid hydrogen target is produced in a continuous flow (1 cm/s) by an extrusion technique (developed with the PELIN laboratory) in a vacuum chamber. The shape of the target is determined by the design of the nozzle at the extrusion process. For the purpose, the choice is a rectangular shape with a width of 10 mm and a thickness in the range of 30-50 microns necessary for the physics objectives. The cryostat is equipped with a GM Cryocooler with sufficient power for the solidification of the hydrogen in the lower portion of the extruder. In the higher part of the cryostat, the hydrogen gas is first liquefied and partially solidified. It is then compressed at 100 bars in the cooled extruder before expulsion of the film through the nozzle at the center of the reaction vacuum chamber. After the previous step, the solid hydrogen ribbon falls by gravity into a dedicated chamber where it sublimes and the gas is pumped and evacuated in a exhaust line. This paper deals with the design of the cryostat with its equipment, with the sizing of the thermal bridge (Aluminum and copper), with the results regarding the contact resistance as well as with the vacuum computations of the reaction and recovery hydrogen gas chambers.

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Science.gov (United States)

Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

2018-06-01

Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Science.gov (United States)

Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

2017-11-01

Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

Directory of Open Access Journals (Sweden)

Hans F. Wardenga

2015-02-01

Full Text Available Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS and ex situ by X-ray diffraction (XRD, optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

Preparation of hydrogenated-TiO2/Ti double layered thin films by water vapor plasma treatment

International Nuclear Information System (INIS)

Pranevicius, L.L.; Milcius, D.; Tuckute, S.; Gedvilas, K.

2012-01-01

Highlights: ► We investigated reaction of water plasma with nanocrystalline TiO 2 films. ► Simultaneous oxidation and hydrogenation of Ti was observed during plasma treatment. ► Water plasma treatment forms hydrogenated nanocrystalline TiO 2 in the shallow surface. - Abstract: We have investigated the structural and compositional variations in 200–500 nm thick Ti films deposited by magnetron sputter-deposition technique and treated in water vapor plasma at different processing powers. It was found that the upper layer of treated film with the thickness of 110 nm was changed into the black hydrogenated-TiO 2 with around 16 nm sized nanocystals during 10 min for dissipated power 200 W at room temperature. Analysis of the experimental results is used to obtain insights into the effects of water layer adsorbed on hydrophilic oxidized titanium surfaces exposed to plasma radiation.

Analysis of Ni-HYDRIDE Thin Film after Surface Plasmon Generation by Laser Technique

Science.gov (United States)

Violante, V.; Castagna, E.; Sibilia, C.; Paoloni, S.; Sarto, F.

2005-12-01

A nickel hydride thin film was studied by the attenuated total reflection method. The differences in behavior between a "black" film, and a pure nickel film "blank," are shown. The black nickel hydride film has been obtained by a short electrolysis with 1 M Li2SO4 electrolyte in light water, A shift in the minimum of the observed reflected light occurs, together with a change in the minimum shape (i.e. its half-height width increases). These two phenomenon are due to the change in the electronic band structure of the metal induced by electrons added to the lattice by hydrogen. The change of the electronic structure, revealed by the laser coupling conditions, leads us to consider that a hydride phase was created. Both the blank (not hydrogenated) and black (hydrogenated) specimens were taken under He-Ne laser beam at the reflectance minimum angle for about three hours. A SIMS analysis was also implemented to reveal differences in the isotopic composition of Cu, as marker element between the blank and black films, in order to study the coupled effect of electrolysis and plasmon-polariton excitation on LENR processes in condensed matter.

Epitaxial thin film growth of LiH using a liquid-Li atomic template

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

2014-01-01

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

International Nuclear Information System (INIS)

Sridhar, N.; Chung, D.D.L.

1992-01-01

This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

Development of neutron diffuse scattering analysis code by thin film and multilayer film

International Nuclear Information System (INIS)

Soyama, Kazuhiko

2004-01-01

To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

Protein-modified nanocrystalline diamond thin films for biosensor applications.

Science.gov (United States)

Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A; Hernando, Jorge; Catharino, Silvia C R; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

2004-10-01

Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

Thin film tritium dosimetry

Science.gov (United States)

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Thin films for emerging applications v.16

CERN Document Server

Francombe, Maurice H

1992-01-01

Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of next-generation thin-film solar cell manufacturing technology - Development of thin-film polycrystalline solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The aim is to realize the practical application of the above-named solar module expected to exhibit higher efficiency and reliability and achieve cost reduction through consumption of less materials. In fiscal 1998, 1) technologies were developed to reduce substrate warpage during recrystallization for the higher-throughput fabrication of high-quality thin films and 2) technologies were also developed for the realization of higher-throughput fabrication of thin films and for efficiency improvement for thin-film modules. Under item 1), experiments were conducted by simulation for reducing warpage to occur in thin-film polycrystalline Si substrates during fabrication by melting and recrystallization. Under item 2), for the development of thin-film cell high-throughput technologies, studies were started on a more practical hydrogen plasma process to challenge the conventional process of crystal defect inactivation by hydrogen ion injection with which achievement of high throughputs is difficult. For the development of technologies for the enhancement of thin-film module efficiency, efforts were exerted to realize a 10cm times 10cm square shape for the enhancement of efficiency in the process of filling modules with cells. These efforts achieved a great step toward future practical application. (NEDO)

Interfaces and thin films physics

International Nuclear Information System (INIS)

Equer, B.

1988-01-01

The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

Buckling of Thin Films in Nano-Scale

Directory of Open Access Journals (Sweden)

Li L.A.

2010-06-01

Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

Laser plasma generation of hydrogen-free diamond-like carbon thin films on Zr-2.5Nb CANDU pressure tube materials and silicon wafers with a pulsed high-power CO2 laser

International Nuclear Information System (INIS)

Ebrahim, N.A.; Mouris, J.F.; Hoffmann, C.R.J.; Davis, R.W.

1995-06-01

We report the first experiments on the laser plasma deposition of hydrogen-free, diamond-like carbon (DLC) films on Zr-2.5Nb CANDU pressure-tube materials and silicon substrates, using the short-pulse, high-power, CO 2 laser in the High-Power Laser Laboratory at Chalk River Laboratories. The films were (AFM). The thin films show the characteristic signature of DLC films in the Raman spectra obtained using a krypton-ion (Kr + ) laser. The Vickers ultra-low-load microhardness tests show hardness of the coated surface of approximately 7000 Kg force mm -2 , which is consistent with the hardness associated with DLC films. AFM examination of the film morphology shows diamond-like crystals distributed throughout the film, with film thicknesses of up to 0.5 μm generated with 50 laser pulses. With significantly more laser pulses, it is expected that very uniform diamond-like films would be produced. These experiments suggest that it should be possible to deposit hydrogen-free, diamond-like films of relevance to nuclear reactor components with a high-power and high-repetition-rate laser facility. (author). 7 refs., 2 tabs., 15 figs

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Development of microforming process combined with thin film transfer printing

Directory of Open Access Journals (Sweden)

Koshimizu Kazushi

2015-01-01

Full Text Available Microforming receives a lot of attentions in the recent years due to the increased use of microparts in electronics and medical sectors. For the further functionalization of these micro devices, high functional surface with noble metals are strongly required for the devices in bio- and medical fields, such as bio-sensors. To realize the submillimeter structure of metal foils and micro to nanometer structures in one forming process, the present study proposes a combined process of microforming for metal foils and transfer printing of gold (Au thin films. To clarify the availability of the proposed combined process, transferability of Au thin films under micro bulging deformation are investigated. 0.1 mm-thick pure titanium (Ti foils and 100 nm-thick Au films were used as blank and functional materials, respectively. The forming tests of the proposed process were conducted. With increasing strain of Ti foils, Au TP areas increase. By this experiment, it’s confirmed that the hydrogen reduction of oxidation layers and the strain of Ti foil are significant factor for Au TP on Ti foils.

Characterization of Thin Film Polymers Through Dynamic Mechanical Analysis and Permeation

Science.gov (United States)

Herring, Helen

2003-01-01

Thin polymer films are being considered, as candidate materials to augment the permeation resistance of cryogenic hydrogen fuel tanks such as would be required for future reusable launch vehicles. To evaluate performance of candidate films after environmental exposure, an experimental study was performed to measure the thermal/mechanical and permeation performance of six, commercial-grade materials. Dynamic storage modulus, as measured by Dynamic Mechanical Analysis, was found over a range of temperatures. Permeability, as measured by helium gas diffusion, was found at room temperature. Test data was correlated with respect to film type and pre-test exposure to moisture, elevated temperature, and cryogenic temperature. Results indicated that the six films were comparable in performance and their resistance to environmental degradation.

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

Science.gov (United States)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

Composite metal-hydrogen electrodes for metal-hydrogen batteries. Final report, October 1, 1993 - April 15, 1997

International Nuclear Information System (INIS)

Ruckman, M.W.; Strongin, M.; Weismann, H.

1997-04-01

The purpose of this project is to develop and conduct a feasibility study of metallic thin films (multilayered and alloy composition) produced by advanced sputtering techniques for use as anodes in Ni-metal hydrogen batteries that would be deposited as distinct anode, electrolyte and cathode layers in thin film devices. The materials could also be incorporated in secondary consumer batteries (i.e. type AF(4/3 or 4/5)) which use electrodes in the form of tapes. The project was based on pioneering studies of hydrogen uptake by ultra-thin Pd-capped Nb films, these studies suggested that materials with metal-hydrogen ratios exceeding those of commercially available metal hydride materials and fast hydrogen charging and discharging kinetics could be produced. The project initially concentrated on gas phase and electrochemical studies of Pd-capped niobium films in laboratory-scale NiMH cells. This extended the pioneering work to the wet electrochemical environment of NiMH batteries and exploited advanced synchrotron radiation techniques not available during the earlier work to conduct in-situ studies of such materials during hydrogen charging and discharging. Although batteries with fast charging kinetics and hydrogen-metal ratios approaching unity could be fabricated, it was found that oxidation, cracking and corrosion in aqueous solutions made pure Nb films and multilayers poor candidates for battery application. The project emphasis shifted to alloy films based on known elemental materials used for NiMH batteries. Although commercial NiMH anode materials contain many metals, it was found that 0.24 μm thick sputtered Zr-Ni films cycled at least 50 times with charging efficiencies exceeding 95% and [H]/[M] ratios of 0.7-1.0. Multilayered or thicker Zr-Ni films could be candidates for a thin film NiMH battery that may have practical applications as an integrated power source for modern electronic devices

Nanocrystalline Pd:NiFe{sub 2}O{sub 4} thin films: A selective ethanol gas sensor

Energy Technology Data Exchange (ETDEWEB)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita, E-mail: smb.agc@gmail.com

2016-10-15

In this work, Pd:NiFe{sub 2}O{sub 4} thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe{sub 2}O{sub 4} thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe{sub 2}O{sub 4} nanoparticle thin film were fabricated. • Pd incorporation in NiFe{sub 2}O{sub 4} matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe{sub 2}O{sub 4} thin film sensor displays excellent long–term stability.

Properties of Resistive Hydrogen Sensors as a Function of Additives of 3 D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

Science.gov (United States)

Sevast'yanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Sergeichenko, N. V.; Chernikov, E. V.; Almaev, A. V.; Kushnarev, B. O.

2017-11-01

Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors' characteristics increases.

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

Science.gov (United States)

Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

2014-01-01

Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

Tungsten oxide (WO3) thin films for application in advanced energy systems

International Nuclear Information System (INIS)

Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

2010-01-01

Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H 2 S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO 3 ) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO 3 films for H 2 S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO 3 thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO 3 films. XRD and SEM results indicate that the WO 3 films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO 3 films exhibit smooth morphology at growth temperatures ≤300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO 3 films grown at 100-300 deg. C could be the potential candidates for H 2 S sensor development for application in coal gasification systems.

Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Device Innovation Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2016-09-15

The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gas flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

P-type CuxS thin films: Integration in a thin film transistor structure

International Nuclear Information System (INIS)

Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

2013-01-01

Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

Grain size increase in pentacene thin films prepared in low-pressure gas ambient

International Nuclear Information System (INIS)

Yokoyama, Takamichi; Park, Chang Bum; Nagashio, Kosuke; Kita, Koji; Toriumi, Akira

2009-01-01

We studied a mechanism of grain size increase (that is, island density decrease) in pentacene film prepared in hydrogen (H 2 ) ambient. The island densities of pentacene films prepared in helium and deuterium were lower than those of vacuum-deposited films. This indicates that the decrease in the island density was not due to the chemical interaction between H 2 and pentacene or the substrate surface. Furthermore, the temperature dependence of the island density indicates that there is no difference in the surface diffusion energy in a vacuum and in H 2 . We also improved mobility significantly in the pentacene thin film transistor fabricated on film grown in H 2 ambient on a chemically treated substrate.

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Thin liquid films dewetting and polymer flow

CERN Document Server

Blossey, Ralf

2012-01-01

This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Organic thin films and surfaces directions for the nineties

CERN Document Server

Ulman, Abraham

1995-01-01

Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

2016-11-30

Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

Novel chemical analysis for thin films

International Nuclear Information System (INIS)

Usui, Toshio; Kamei, Masayuki; Aoki, Yuji; Morishita, Tadataka; Tanaka, Shoji

1991-01-01

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50A- and 125A-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (θ t ) with respect to the film surface; the intensity of AuM line from the 125A-thick Au thin film was 1.5 times as large as that of SiK α line (1.74 keV) emitted from the Si substrate when θ t = 0deg-3deg, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81deg). In addition, the intensity of the AuM line emitted from the 50A-thick Au thin film was also sufficiently strong for chemical analysis. (author)

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

Energy Technology Data Exchange (ETDEWEB)

Woerdenweber, Jan

2011-09-26

This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

Adhesion enhancement of diamond-like carbon thin films on Ti alloys by incorporation of nanodiamond particles

International Nuclear Information System (INIS)

Zhang, C.Z.; Tang, Y.; Li, Y.S.; Yang, Q.

2013-01-01

Coating adherent diamond-like carbon (DLC) thin films directly on Ti alloys is technologically difficult. This research incorporates nanodiamond particles to form a diamond/DLC composite interlayer to enhance the adhesion of DLC thin films on Ti6Al4V substrates. Initially, nanodiamond particles were deposited on Ti6Al4V substrates by microwave plasma enhanced chemical vapor deposition from a methane–hydrogen gas mixture. A DLC thin film was then deposited, on top of the nanodiamond particles, by direct ion beam deposition. Scanning electron microscopy, Atomic force microscopy, X-ray Diffraction and Raman spectroscopy were used to characterize the microstructure and chemical bonding of the deposited particles and films, and Rockwell indentation testing was used to evaluate the adhesion of the deposited films. The results indicate that the pre-deposited nanodiamond particles significantly enhance the interfacial adhesion between the DLC thin film and the Ti6Al4V substrate, possibly by enhanced interfacial bonding, mechanical interlocking, and stress relief. - Highlights: ► Nanodiamond particles were deposited on Ti6Al4V before DLC deposition. ► Diamond/DLC composite film was formed by incorporation of nanodiamond particles. ► Greatly enhanced adhesion of diamond/DLC composite film on Ti6Al4V was achieved. ► Enhanced adhesion is by increased interfacial bonding and mechanical interlocking

Adhesion enhancement of diamond-like carbon thin films on Ti alloys by incorporation of nanodiamond particles

Energy Technology Data Exchange (ETDEWEB)

Zhang, C.Z.; Tang, Y. [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, Canada S7N 5A9 (Canada); Li, Y.S. [Plasma Physics Laboratory, University of Saskatchewan, 116 Science Place, Saskatoon, SK, Canada S7N 5E2 (Canada); Yang, Q., E-mail: qiaoqin.yang@usask.ca [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, Canada S7N 5A9 (Canada)

2013-01-01

Coating adherent diamond-like carbon (DLC) thin films directly on Ti alloys is technologically difficult. This research incorporates nanodiamond particles to form a diamond/DLC composite interlayer to enhance the adhesion of DLC thin films on Ti6Al4V substrates. Initially, nanodiamond particles were deposited on Ti6Al4V substrates by microwave plasma enhanced chemical vapor deposition from a methane–hydrogen gas mixture. A DLC thin film was then deposited, on top of the nanodiamond particles, by direct ion beam deposition. Scanning electron microscopy, Atomic force microscopy, X-ray Diffraction and Raman spectroscopy were used to characterize the microstructure and chemical bonding of the deposited particles and films, and Rockwell indentation testing was used to evaluate the adhesion of the deposited films. The results indicate that the pre-deposited nanodiamond particles significantly enhance the interfacial adhesion between the DLC thin film and the Ti6Al4V substrate, possibly by enhanced interfacial bonding, mechanical interlocking, and stress relief. - Highlights: ► Nanodiamond particles were deposited on Ti6Al4V before DLC deposition. ► Diamond/DLC composite film was formed by incorporation of nanodiamond particles. ► Greatly enhanced adhesion of diamond/DLC composite film on Ti6Al4V was achieved. ► Enhanced adhesion is by increased interfacial bonding and mechanical interlocking.

Epitaxial thin film growth of LiH using a liquid-Li atomic template

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

2014-11-24

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Energy Technology Data Exchange (ETDEWEB)

Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

2016-12-15

Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Thin Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K.

1998-11-19

The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

Thin films: Past, present, future

Energy Technology Data Exchange (ETDEWEB)

Zweibel, K

1995-04-01

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Non-linear optics of nano-scale pentacene thin film

Science.gov (United States)

Yahia, I. S.; Alfaify, S.; Jilani, Asim; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; Abutalib, M. M.; Al-Bassam, A.; El-Naggar, A. M.

2016-07-01

We have found the new ways to investigate the linear/non-linear optical properties of nanostructure pentacene thin film deposited by thermal evaporation technique. Pentacene is the key material in organic semiconductor technology. The existence of nano-structured thin film was confirmed by atomic force microscopy and X-ray diffraction. The wavelength-dependent transmittance and reflectance were calculated to observe the optical behavior of the pentacene thin film. It has been observed the anomalous dispersion at wavelength λ 800. The non-linear refractive index of the deposited films was investigated. The linear optical susceptibility of pentacene thin film was calculated, and we observed the non-linear optical susceptibility of pentacene thin film at about 6 × 10-13 esu. The advantage of this work is to use of spectroscopic method to calculate the liner and non-liner optical response of pentacene thin films rather than expensive Z-scan. The calculated optical behavior of the pentacene thin films could be used in the organic thin films base advanced optoelectronic devices such as telecommunications devices.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Transparent sculptured titania films for enhanced light absorption in thin-film Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Hung, Kai-Hsiang, E-mail: khhung@itri.org.tw [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chiou, Guan-Di; Wong, Ming-Show [Department of Materials Science and Engineering, National Dong Hwa University, Hualien, Taiwan (China); Wang, Yu-Chih [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chung, I-Shan [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China)

2011-12-30

This study presents a description of the enhancement of light absorption in thin-film silicon (Si) solar cells by using sculptured titania (TiO{sub 2}) films. We used an electron-beam evaporation system with a glancing angle deposition (GLAD) method to deposit porous TiO{sub 2} films on fluorine-doped SnO{sub 2} (FTO) substrates. The GLAD TiO{sub 2}/FTO films were used as conductive electrodes in hydrogenated microcrystalline silicon ({mu}c-Si:H) solar cells. Transmission electron microscopy revealed that the GLAD TiO{sub 2} films are composed of sculptured nano-pillars on an FTO surface, and this nanostructure provides a synergistic route for light scattering enhancement. The GLAD TiO{sub 2}/FTO exhibited a 68% improvement of optical haze (at {lambda} = 600 nm). The {mu}c-Si:H solar cells consisting of the GLAD-nanostructured TiO{sub 2} resulted in a 5% improvement of short-circuit current (J{sub sc}) and yielded a cell efficiency of 6.6%.

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Directory of Open Access Journals (Sweden)

Sergey Burdyukh

2018-01-01

Full Text Available The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.

Thin Films in the Photovoltaic Industry

International Nuclear Information System (INIS)

Jaeger-Waldau, A.

2008-03-01

In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

Nanostructured thin films and coatings functional properties

CERN Document Server

Zhang, Sam

2010-01-01

The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

Introduction to thin film transistors physics and technology of TFTs

CERN Document Server

Brotherton, S D

2013-01-01

Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

Thin film limit correction method to the surface defective layer in low absorption spectroscopy

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Holovský, Jakub; Purkrt, Adam; Stuchlík, Jiří

2015-01-01

Roč. 7, č. 4 (2015), s. 343-346 ISSN 2164-6627 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LD14011 Institutional support: RVO:68378271 Keywords : thin films * optical properties * hydrogenated amorphous silicon * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

Depth profiles of H and O in thin films of a-Si:H

International Nuclear Information System (INIS)

Sie, S.H.; Ryan, C.J.

1985-01-01

Detailed depth profiles of hydrogen and oxygen were measured, in thin film samples of a-Si:H produced under varying conditions, using the reaction 1 H( 19 F,α γ) 16 O in the vicinity of the resonance at E( 19 F) = 6.417 MeV to profile hydrogen, and resonant elastic α scattering near the resonance at Eα = 3.0359 MeV to profile oxygen. Contrasting results reflecting the different fabrication conditions were obtained and these were correlated with the measured electrical properties

Gasochromic performance of WO{sub 3}-nanorod thin films fabricated with an ArF excimer laser

Energy Technology Data Exchange (ETDEWEB)

Yaacob, M. H. [RMIT University, Melbourne (Australia); Universiti Putra Malaysia, Selangor (Malaysia); Ou, J. Z.; Wlodarski, W. [RMIT University, Melbourne (Australia); Kim, C. S.; Lee, J. Y. [KAIST, Daejon (Korea, Republic of); Kim, Y. H. [KIST, Seoul (Korea, Republic of); Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H. [University of Incheon, Incheon (Korea, Republic of)

2012-02-15

Thin films with tungsten trioxide (WO{sub 3}) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H{sub 2}) gas was investigated for a WO{sub 3} film coated with 25-A-thick palladium (Pd). The Pd/WO{sub 3}-nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H{sub 2} concentration was clearly sensed. A significant reversible absorbance change and fast recovery (<2 min) were observed when the films were exposed to H{sub 2} at different concentrations.

Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

Thermal conductivity model for nanoporous thin films

Science.gov (United States)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

Science.gov (United States)

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical thin film deposition

International Nuclear Information System (INIS)

Macleod, H.A.

1979-01-01

The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

Optical thin films and coatings from materials to applications

CERN Document Server

Flory, Francois

2013-01-01

Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

Photochemical oxygen reduction by zinc phthalocyanine and silver/gold nanoparticle incorporated silica thin films

Energy Technology Data Exchange (ETDEWEB)

Pal, Manas; Ganesan, Vellaichamy, E-mail: velganesh@yahoo.com; Azad, Uday Pratap

2012-12-15

Silver or gold nanoparticles are synthesized using a borohydride reduction method and are anchored simultaneously into/onto the mercaptopropyl functionalized silica. Later, zinc phthalocyanine is adsorbed onto the above materials. Thin films of these materials are prepared by coating an aqueous colloidal suspension of the respective material onto glass plates. Visible light irradiation of these films in oxygen saturated, stirred aqueous solutions effectively reduces oxygen to hydrogen peroxide. The photocatalytic reduction of oxygen is explained on the basis of the semiconducting properties of the silica films. The back electron transfer reaction is largely prevented by means of a sacrificial electron donor, triethanolamine. - Highlights: Black-Right-Pointing-Pointer Zinc phthalocyanine adsorbed silica materials were prepared. Black-Right-Pointing-Pointer Thin films of these materials photocatalytically reduce oxygen. Black-Right-Pointing-Pointer The photocatalysis is explained based on semiconductor properties of the materials. Black-Right-Pointing-Pointer Metal nanoparticles increase the photocatalytic efficiency of the materials.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Properties of laser-crystallized polycrystalline SiGe thin films

Energy Technology Data Exchange (ETDEWEB)

Weizman, Moshe

2008-06-06

In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0thin films with 0.3film, which is directly coupled to a periodic compositional variation. - Amorphous SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

Preparation of SiC thin films by ion beam technology and PECVD

International Nuclear Information System (INIS)

Chen Changqing; Ren Congxin; Yang Lixin; Yan Jinlong; Zheng Zhihong; Zhou Zuyao; Chen Ping; Liu Xianghuai; Chen Xueliang

1998-01-01

The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED is presented and the enhanced deposition of Xe + is found superior to that of Ar + . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pCH 4 /pAr. Finally given is a brief introduction to a high quality α-SiC:H film which is prepared by PECVD and can exhibit green luminescence at room temperature

Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

Energy Technology Data Exchange (ETDEWEB)

Catalán, S.; Álvarez-Fraga, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Salas, E. [Spline CRG, ESRF, 38043 Grenoble (France); Ramírez-Jiménez, R. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, Leganés, 28911 Madrid (Spain); Rodriguez-Palomo, A.; Andrés, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain)

2016-11-15

Highlights: • The charge mobility in IMO films is correlated with its hydrogen content. • The mobility behavior is explained by the presence of OH{sup −} groups in IMO films. • Mo{sup 4+} is identified in transparent conductive IMO by X-ray absorption spectroscopy. - Abstract: The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H{sub 2} in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H{sub 2} content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo{sup 4+} is placed at the In site of the indium oxide.

Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

International Nuclear Information System (INIS)

Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S

2004-01-01

We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics

Investigation of nanocrystalline Gd films loaded with hydrogen

KAUST Repository

Hruška, Petr; Čí žek, Jakub; Dobroň, Patrik; Anwand, Wolfgang; Mü cklich, Arndt; Gemma, Ryota; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid

2015-01-01

The present work reports on microstructure studies of hydrogen-loaded nanocrystalline Gd films prepared by cold cathode beam sputtering on sapphire (112¯0) substrates. The Gd films were electrochemically step-by-step charged with hydrogen and the structural development with increasing concentration of absorbed hydrogen was studied by transmission electron microscopy and in-situ   X-ray diffraction using synchrotron radiation. The relaxation of hydrogen-induced stresses was examined by acoustic emission measurements. In the low concentration range absorbed hydrogen occupies preferentially vacancy-like defects at GBs typical for nanocrystalline films. With increasing hydrogen concentration hydrogen starts to occupy interstitial sites. At the solid solution limit the grains gradually transform into the ββ-phase (GdH2). Finally at high hydrogen concentrations xH>2.0xH>2.0 H/Gd, the film structure becomes almost completely amorphous. Contrary to bulk Gd specimens, the formation of the γγ-phase (GdH3) was not observed in this work.

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Tools to synthesize the learning of thin films

International Nuclear Information System (INIS)

Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

2011-01-01

After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

International Nuclear Information System (INIS)

Koida, Takashi; Sai, Hitoshi; Kondo, Michio

2010-01-01

Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

Hydrogen absorption in epitaxial Nb-films. A STM-study; Wasserstoffabsorption in epitaktischen Niobschichten. Eine STM-Studie

Energy Technology Data Exchange (ETDEWEB)

Noerthemann, K.

2006-07-01

In this work the phase transition of the system Niobium Hydrogen in thin films was investigated. The epitaxial Niobium films were fabricated using ion sputtering on sapphire substrates. The changes due to the hydrogen loading were observed with the scanning tunnel microscope (STM). With this method it is possible to detect the changes in the nanometer scale. With help of theoretical models it was possible to establish volume changes through the measured surface data. This is possible due to the linear relationship between hydrogen concentration and volume expansion. Comparisons between experimental data and calculations, which were done using the 'finite element method', allows to establish that the hydride precipitates are of cylindrical form. Thereafter the time continuously measurements of nuclei formation and precipitations growth was investigated. The growth is described through a 'Johnson-Mehl-Avrami' kinetic. Whereas coherent precipitations at first stage were observed, afterwards at higher Hydrogen concentration these transformed to incoherent. This coherent - incoherent transition occur at precipitation sizes which shows a film thickness dependency. (orig.)

Resistivity of thiol-modified gold thin films

International Nuclear Information System (INIS)

Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

2014-01-01

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

Resistivity of thiol-modified gold thin films

Energy Technology Data Exchange (ETDEWEB)

Correa-Puerta, Jonathan [Instituto de Física, Pontificia Universidad Católica de Valparaíso, Av. Universidad 330, Curauma, Valparaíso (Chile); Del Campo, Valeria [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Henríquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile); Häberle, Patricio [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

2014-11-03

In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography.

Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

Energy Technology Data Exchange (ETDEWEB)

Manaa, C., E-mail: chadlia.el.manaa@gmail.com [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Lejeune, M. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Kouki, F. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Durand-Drouhin, O. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Bouchriha, H. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); and others

2014-06-02

We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method.

Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

International Nuclear Information System (INIS)

Manaa, C.; Lejeune, M.; Kouki, F.; Durand-Drouhin, O.; Bouchriha, H.

2014-01-01

We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method

Correlation of magnetic and mechanical properties of hydrogenated, compositionally modulated, amorphous Fe80Zr20 films (abstract)

International Nuclear Information System (INIS)

Rengarajan, S.; Yun, E.J.; Lee, B.H.; Cho, B.I.; Walser, R.M.

1996-01-01

Recent research has demonstrated that large amounts of hydrogen can be electrolytically incorporated in amorphous, compositionally modulated (CM) FeZr films. The first irreversible changes in the magnetic state of an electrolytically hydrogenated iron-rich amorphous alloy were observed. The hydrogen-induced changes in the magnetization were interpreted in terms of specific structural rearrangements. In this work, simultaneous measurements of the variations in the magnetization and mechanical properties of these films were measured as a function of hydrogen charging to further clarify the hydrogen-induced structure changes. The Young close-quote s moduli E and internal friction d of as-deposited, and as-hydrogenated CM Fe 80 Zr 20 thin films were calculated from the displacements of a vibrating composite cantilever, measured using a laser heterodyne interferometer (LHI) having a displacement sensitivity of ∼0.01 A. E and d were measured using the resonant frequency method. CM films with thickness 1390 A and modulation wavelength ∼10 A were deposited on glass cantilevers (5 mm long, 2 mm wide, and 150 μm thick) by sequentially sputtering (rf diode) elemental Fe and Zr targets. The samples were electrolytically hydrogenated for various times in 2 N phosphoric acid with a current density of 26.3 mA/cm 2 . The maximum change in magnetization of the film (from 71.5 to 551 emu/cm 3 ) was observed after 5 min. During this time, E increased 18-fold from 535 GPa to 9.63 TPa. The unusually high Young close-quote s modulus of the as-deposited CM film is comparable to those previously observed in other CM films. The change is three times larger than the change in the E of carbon steel at the martensitic transformation, and nine times larger than the hydrogen induced increase in E of pure single crystals of iron. (Abstract Truncated)

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

Energy Technology Data Exchange (ETDEWEB)

Tang, Haochun; Ishikawa, Kyohei; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio, E-mail: kamiya.t.aa@m.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2015-11-28

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10{sup −4} and 10{sup −7 }Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 10{sup 20} and 10{sup 19 }cm{sup −3}, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H{sub 2}O). The step-wise near-CBM states were observed only in the STD films deposited without O{sub 2} gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O{sub 2} flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H{sub 2}O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O{sub 2}. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O{sub 2} flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H{sub 2}O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm{sup 2}/(V s)

Bilayered Oxide thin films for transparent electrode application

Science.gov (United States)

Dutta, Titas; Narayan, Jagdish

2008-10-01

Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Photoluminescence properties of perovskite multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

2016-07-01

Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

Optical characteristics of the thin-film scintillator detector

International Nuclear Information System (INIS)

Muga, L.; Burnsed, D.

1976-01-01

A study of the thin-film detector (TFD) was made in which various light guide and scintillator film support configurations were tested for efficiency of light coupling. Masking of selected portions of the photomultiplier (PM) tube face revealed the extent to which emitted light was received at the exposed PM surfaces. By blocking off selected areas of the scintillator film surface from direct view of the PM tube faces, a measure of the light-guiding efficiency of the film and its support could be estimated. The picture that emerges is that, as the light which is initially trapped in the thin film spreads radially outward from the ion entrance/exit point, it is scattered out of the film by minute imperfections. Optimum signals were obtained by a configuration in which the thin scintillator film was supported on a thin rectangular Celluloid frame inserted within a highly polished metal cylindrical sleeve

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

Energy Technology Data Exchange (ETDEWEB)

Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

2015-04-15

Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

Sol–gel derived scattering layers as substrates for thin-film photovoltaic cells

Energy Technology Data Exchange (ETDEWEB)

Hegmann, Jan [Lehrstuhl für Chemische Technologie der Materialsynthese, Universität Würzburg, Röntgenring 11, 97070 Würzburg (Germany); Mandl, Magdalena [Fraunhofer-Institut für Silicatforschung, Neunerplatz 2, 97082 Würzburg (Germany); Löbmann, Peer, E-mail: peer.loebmann@isc.fraunhofer.de [Fraunhofer-Institut für Silicatforschung, Neunerplatz 2, 97082 Würzburg (Germany)

2014-08-01

Agglomerated silica particles were coated on glass by dip-coating; the resulting films exhibited optical scattering. With constant optical transmittances > 80% their haze could be modified by the withdrawal rate applied for the respective deposition procedure. Film thickness, surface topography and coverage of the substrate were characterized by Scanning Electron Microscopy and Atomic Force Microscopy. For the use in radiation management in thin-film silicon solar cells in a first step the scattering layers were coated with aluminum-doped zinc oxide by sputtering; the optical performance of the resulting bilayer was characterized by haze measurements and angle resolved scattering spectroscopy. Quantum efficiencies of complete solar cells could be determined after the deposition of a hydrogenated amorphous Si/hydrogenated microcrystalline Si tandem absorber and application of metallic back contacts. It turned out that the external quantum efficiency of the resulting cells is not directly related to the light scattering performance of the scattering layer used. - Highlights: • Characterization of sol–gel scattering layers • Combination of different coating-technologies to prepare stacks with optical functionality • Comprehensive material preparation and characterization for complex multilayer.

Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

Science.gov (United States)

Katayama, Tsukasa; Chikamatsu, Akira; Yamada, Keisuke; Shigematsu, Kei; Onozuka, Tomoya; Minohara, Makoto; Kumigashira, Hiroshi; Ikenaga, Eiji; Hasegawa, Tetsuya

2016-08-01

Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

Fractal and multifractal analysis of LiF thin film surface

International Nuclear Information System (INIS)

Yadav, R.P.; Dwivedi, S.; Mittal, A.K.; Kumar, M.; Pandey, A.C.

2012-01-01

Highlights: ► Fractal and multifractal analysis of surface morphologies of the LiF thin films. ► Complexity and roughness of the LiF thin films increases as thickness increases. ► LiF thin films are multifractal in nature. ► Strength of the multifractality increases with thickness of the film. - Abstract: Fractal and multifractal analysis is performed on the atomic force microscopy (AFM) images of the surface morphologies of the LiF thin films of thickness 10 nm, 20 nm, and 40 nm, respectively. Autocorrelation function, height–height correlation function, and two-dimensional multifractal detrended fluctuation analysis (MFDFA) are used for characterizing the surface. It is found that the interface width, average roughness, lateral correlation length, and fractal dimension of the LiF thin film increase with the thickness of the film, whereas the roughness exponent decreases with thickness. Thus, the complexity and roughness of the LiF thin films increases as thickness increases. It is also demonstrated that the LiF thin films are multifractal in nature. Strength of the multifractality increases with thickness of the film.

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Laser nanostructuring of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

2016-06-30

Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

Science.gov (United States)

Ikeda, Ai; Manabe, Takaaki; Naito, Michio

2013-12-01

Infinite-layer LaNiO2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO2 is isostructural to SrCuO2, the parent compound of high-Tc Sr0.9La0.1CuO2 with Tc = 44 K, and has 3d9 configuration, which is very rare in oxides but common to high-Tc copper oxides. The bulk synthesis of LaNiO2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO2. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

Restructuring in block copolymer thin films

DEFF Research Database (Denmark)

Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

2017-01-01

Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

Science.gov (United States)

Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

2018-02-01

Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

Nanosphere lithography applied to magnetic thin films

Science.gov (United States)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Bandtail characteristics in InN thin films

International Nuclear Information System (INIS)

Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

2002-01-01

The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

Thin films of mixed metal compounds

Science.gov (United States)

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

Science.gov (United States)

Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

2018-01-09

Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

Thin-Film Power Transformers

Science.gov (United States)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Preparation and properties of antimony thin film anode materials

Institute of Scientific and Technical Information of China (English)

SU Shufa; CAO Gaoshao; ZHAO Xinbing

2004-01-01

Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design.

Science.gov (United States)

Yu, Dongliang; Yin, Min; Lu, Linfeng; Zhang, Hanzhong; Chen, Xiaoyuan; Zhu, Xufei; Che, Jianfei; Li, Dongdong

2015-11-01

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

Directory of Open Access Journals (Sweden)

Amornrat Limmanee

2014-01-01

Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Peroxy-Titanium Complex-based inks for low temperature compliant anatase thin films.

Science.gov (United States)

Shabanov, N S; Asvarov, A Sh; Chiolerio, A; Rabadanov, K Sh; Isaev, A B; Orudzhev, F F; Makhmudov, S Sh

2017-07-15

Stable highly crystalline titanium dioxide colloids are of paramount importance for the establishment of a solution-processable library of materials that could help in bringing the advantages of digital printing to the world of photocatalysis and solar energy conversion. Nano-sized titanium dioxide in the anatase phase was synthesized by means of hydrothermal methods and treated with hydrogen peroxide to form Peroxy-Titanium Complexes (PTCs). The influence of hydrogen peroxide on the structural, optical and rheological properties of titanium dioxide and its colloidal solutions were assessed and a practical demonstration of a low temperature compliant digitally printed anatase thin film given. Copyright © 2017 Elsevier Inc. All rights reserved.

Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

Energy Technology Data Exchange (ETDEWEB)

Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

2013-11-15

We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

A study of semiconducting properties of hydrogen containing passive films

International Nuclear Information System (INIS)

Zeng, Y.M.; Luo, J.L.; Norton, P.R.

2004-01-01

Mott-Schottky and photoelectrochemical measurements were used to explore the effects of hydrogen and chloride ions on the electronic properties of the passive film on X70 micro-alloyed steel in a solution of 0.5 M NaHCO 3 . Mott-Schottky analyses have shown that hydrogen increases the capacitance and donor density, and decreases the flat band potential and the space charge layer thickness of the passive film. The photocurrent of the film is remarkably increased by hydrogen. The effects of hydrogen become more pronounced with an increase in the hydrogen charging current densities. Hydrogen has no noticeable effect on the band gap energy E g and the process by which hole-electron pairs are photo-generated in the film. The presence of chloride ions in the solution produces some similar effects on the electronic properties of the passive film to those observed with hydrogen, but reduces the photocurrent and increases the band gap energy of the film. No significant synergistic effects on the electronic properties of the passive film were observed in the presence of hydrogen and Cl - . These results provide very useful information for elucidating the mechanism by which hydrogen changes the properties of passive film and then promotes localized corrosion

Hydrogenation of polycrystalline silicon thin films

Czech Academy of Sciences Publication Activity Database

Honda, Shinya; Mates, Tomáš; Knížek, Karel; Ledinský, Martin; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.

2006-01-01

Roč. 501, - (2006), s. 144-148 ISSN 0040-6090 R&D Projects: GA MŠk ME 537; GA MŽP(CZ) SM/300/1/03; GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GA202/03/0789 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon * atmospheric pressure chemical vapour deposition * hydrogen passivation * photoluminescence * Raman spectroscopy * Si-H 2 bonding * hydrogen molecules Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.666, year: 2006

Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

OpenAIRE

Tan, H.

2015-01-01

Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

Passivation effect of water vapour on thin film polycrystalline Si solar cells

Czech Academy of Sciences Publication Activity Database

Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

2016-01-01

Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

Chemical vapour deposition of thin-film dielectrics

International Nuclear Information System (INIS)

Vasilev, Vladislav Yu; Repinsky, Sergei M

2005-01-01

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

Residual stress in spin-cast polyurethane thin films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

2015-01-19

Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

Energy Technology Data Exchange (ETDEWEB)

Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

2017-02-28

Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

Simulated Thin-Film Growth and Imaging

Science.gov (United States)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

Nanostructured thin films as functional coatings

Energy Technology Data Exchange (ETDEWEB)

Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

2010-06-15

Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

Dealloyed Ruthenium Film Catalysts for Hydrogen Generation from Chemical Hydrides

Directory of Open Access Journals (Sweden)

Ramis B. Serin

2017-07-01

Full Text Available Thin-film ruthenium (Ru and copper (Cu binary alloys have been prepared on a Teflon™ backing layer by cosputtering of the precious and nonprecious metals, respectively. Alloys were then selectively dealloyed by sulfuric acid as an etchant, and their hydrogen generation catalysts performances were evaluated. Sputtering time and power of Cu atoms have been varied in order to tailor the hydrogen generation performances. Similarly, dealloying time and the sulfuric acid concentration have also been altered to tune the morphologies of the resulted films. A maximum hydrogen generation rate of 35 mL min−1 was achieved when Cu sputtering power and time were 200 W and 60 min and while acid concentration and dealloying time were 18 M and 90 min, respectively. It has also been demonstrated that the Ru content in the alloy after dealloying gradually increased with the increasing the sputtering power of Cu. After 90 min dealloying, the Ru to Cu ratio increased to about 190 times that of bare alloy. This is the key issue for observing higher catalytic activity. Interestingly, we have also presented template-free nanoforest-like structure formation within the context of one-step alloying and dealloying used in this study. Last but not least, the long-time hydrogen generation performances of the catalysts system have also been evaluated along 3600 min. During the first 600 min, the catalytic activity was quite stable, while about 24% of the catalytic activity decayed after 3000 min, which still makes these systems available for the development of robust catalyst systems in the area of hydrogen generation.

Thin film characterization by resonantly excited internal standing waves

Energy Technology Data Exchange (ETDEWEB)

Di Fonzio, S [SINCROTRONE TRIESTE, Trieste (Italy)

1996-09-01

This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.