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Sample records for thin film hydrogen

  1. Thin film hydrogen sensor

    Science.gov (United States)

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  2. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  3. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  4. Passivation of cobalt nanocluster assembled thin films with hydrogen

    DEFF Research Database (Denmark)

    Romero, C.P.; Volodin, A.; Di Vece, M.

    2012-01-01

    The effect of hydrogen passivation on bare and Pd capped cobalt nanocluster assembled thin films was studied with Rutherford backscattering spectrometry (RBS) and magnetic force microscopy (MFM) after exposure to ambient conditions. The nanoclusters are produced in a laser vaporization cluster...

  5. Pd thin films on flexible substrate for hydrogen sensor

    Energy Technology Data Exchange (ETDEWEB)

    Öztürk, Sadullah [Fatih Sultan Mehmet Vakıf University, Engineering Faculty, Istanbul (Turkey); Kılınç, Necmettin, E-mail: nkilinc@nigde.edu.tr [Nigde University, Mechatronics Engineering Department, 51245 Nigde (Turkey); Nigde University, Nanotechnology Application and Research Center, 51245 Nigde (Turkey)

    2016-07-25

    In this work, palladium (Pd) thin films were prepared via RF sputtering method with various thicknesses (6 nm, 20 nm and 60 nm) on both a flexible substrate and a hard substrate. Hydrogen (H{sub 2}) sensing properties of Pd films on flexible substrate have been investigated depending on temperatures (25–100 °C) and H{sub 2} concentrations (600 ppm – 10%). The effect of H{sub 2} on structural properties of the films was also studied. The films were characterized by Scanning Electron Microscopy (SEM) and X-ray diffraction. It is found that whole Pd films on hard substrate show permanent structural deformation after exposed to 10% H{sub 2} for 30 min. But, this H{sub 2} exposure does not causes any structural deformation for 6 nm Pd film on flexible substrate and 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2} concentration without any structural deformation. On the other hand, Pd film sensors that have the thicknesses 20 nm and 60 nm on flexible substrate are irreversible for higher H{sub 2} concentration (>2%) with film deformation. The sensor response of 6 nm Pd film on flexible substrate increased with increasing H{sub 2} concentration up 4% and then saturated. The sensitivity of the film decreased with increasing operation temperature. - Highlights: • Pd thin films fabricated by RF sputtering on both flexible and hard substrates. • Structural deformation observed for films on hard substrate after exposing 10% H{sub 2}. • 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2}. • H{sub 2} sensing properties of film on flexible substrate investigated depending on temperature and concentration. • The sensitivity of the film decreased with increasing operation temperature.

  6. Hydrogenation of polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Knížek, Karel; Ledinský, Martin; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.

    2006-01-01

    Roč. 501, - (2006), s. 144-148 ISSN 0040-6090 R&D Projects: GA MŠk ME 537; GA MŽP(CZ) SM/300/1/03; GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GA202/03/0789 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon * atmospheric pressure chemical vapour deposition * hydrogen passivation * photoluminescence * Raman spectroscopy * Si-H 2 bonding * hydrogen molecules Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.666, year: 2006

  7. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  8. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  9. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    OpenAIRE

    Ganesh E. Patil; D. D. Kajale; D. N. Chavan; N. K. Pawar; V. B. Gaikwad; G. H. Jain

    2010-01-01

    Polycrystalline tin oxide (SnO2) thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT). The film was characterized for their phase and morphology by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2), liquefied petroleum gas (LPG), ethanol vapors (C2H5OH), NH3, CO, CO2, Cl2 an...

  10. Hydrogen adsorption in thin films of Prussian blue analogue

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Dali [Los Alamos National Laboratory; Ding, Vivian [Los Alamos National Laboratory; Luo, Junhua [Los Alamos National Laboratory; Currier, Robert P [Los Alamos National Laboratory; Obrey, Steve [Los Alamos National Laboratory; Zhao, Yusheng [Los Alamos National Laboratory

    2008-01-01

    Quartz crystal microbalance with dissipation (QCM-D) measurement was used to investigate the kinetics of the molecular hydrogen adsorption into thin films of prussian blue analogues - Cu{sub 3}[Co(CN){sub 6}]{sub 2} at ambient conditions. Although the equilibrium adsorption seems to be independent of the thickness, the adsorption rate substantially decreases with the thickness of the films. In addition, the reversibility of H{sub 2} adsorption into the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films was investigated. The results indicate that the Cu{sub 3}[Co(CN){sub 6}]{sub 2} maily interacts with H{sub 2} molecules physically. The highest H{sub 2} uptake by the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films is obtained when the gas phase is stagnant inside the testing cell. However, the unusual high H{sub 2} uptake obtained from the QCM-D measurement makes us question how reliable this analytic methodology is.

  11. Hydrogen passivation of polycrystalline Si thin film solar cells

    International Nuclear Information System (INIS)

    Gorka, Benjamin

    2010-01-01

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

  12. Hydrogen passivation of polycrystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  13. Modification of rubber surface with hydrogenated diamond-like carbon thin films

    NARCIS (Netherlands)

    Pei, Y. T.; Bui, X. L.; De Hosson, J. Th. M.; Laudon, M; Romanowicz, B

    2009-01-01

    Thin films of hydrogenated diamond-like carbon (DLC) have been deposited on hydrogenated nitrile butadiene rubber (HNBR) for reduction of friction and enhancement of wear resistance of dynamic rubber seals, by sputtering graphite targets in C(2)H(2)/Ar plasma. The wax removal and pre-deposition

  14. Hydrogen analysis in CrSiO thin films

    International Nuclear Information System (INIS)

    Neelmeijer, C.; Sobe, G.

    1993-01-01

    H-concentrations of more than 10 at% have been obtained in CrSiO films when deposited by r.f. diode sputtering with cermet targets. No hydrogen was detectable within analogous layers produced by reactive magnetron coating within the same apparatus. The different electrical properties measured for both layer types refer to the presence of the H-contaminants. (author) 4 refs.; 2 figs

  15. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  16. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  17. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    International Nuclear Information System (INIS)

    Volpi, F.; Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

    2014-01-01

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm 3 , respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly

  18. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Roč. 580, suppl. 1 (2013), S40-S43 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : defects * hydrogen * positron annihilation * thin films * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.726, year: 2013

  19. Metal-insulator phase transition in hydrogenated thin films of V2O3

    Science.gov (United States)

    Andreev, V. N.; Klimov, V. A.; Kompan, M. E.

    2017-12-01

    Temperature dependences of the electrical conductivity of thin vanadium sesquioxide V2O3 films obtained by using the laser sputtering technique have been studied. A significant decrease (by four-five orders of magnitude) in the electrical conductivity has been observed below 150 K as a result of a metal-insulator phase transition. It is shown that hydrogenation of films lowers the temperature of this phase transition.

  20. The role of surface oxides on hydrogen sorption kinetics in titanium thin films

    Science.gov (United States)

    Hadjixenophontos, Efi; Michalek, Lukas; Roussel, Manuel; Hirscher, Michael; Schmitz, Guido

    2018-05-01

    Titanium is presently discussed as a catalyst to accelerate the hydrogenation kinetics of hydrogen storage materials. It is however known that H absorption in Ti decisively depends on the surface conditions (presence or absence of the natural surface oxide). In this work, we use Ti thin films of controlled thickness (50-800 nm) as a convenient tool for quantifying the atomic transport. XRD and TEM investigations allow us to follow the hydrogenation progress inside the film. Hydrogenation of TiO2/Ti bi-layers is studied at 300 °C, for different durations (10 s to 600 min) and at varying pressures of pure H2 atmosphere. Under these conditions, the hydrogenation is found to be linear in time. By comparing films with and without TiO2, as well as by studying the pressure dependence of hydrogenation, it is demonstrated that hydrogen transport across the oxide represents the decisive kinetic barrier rather than the splitting of H2 molecules at the surface. Hydrogenation appears by a layer-like reaction initiated by heterogeneous nucleation at the backside interface to the substrate. The linear growth constant and the H diffusion coefficient inside the oxide are quantified, as well as a reliable lower bound to the hydrogen diffusion coefficient in Ti is derived. The pressure dependence of hydrogen absorption is quantitatively modelled.

  1. The deuterium-exchange reaction between water and hydrogen with the thin-film hydrophobic catalyst

    International Nuclear Information System (INIS)

    Yamashita, Hisao; Mizumoto, Mamoru; Matsuda, Shimpei

    1985-01-01

    The deuterium-exchange reaction between water and hydrogen with a hydrophobic catalyst was studied. The hydrophobic catalyst was composed of platinum as an active component and porous poly(tetrafluoroethylene) (PTFE) as a support. The PTFE support was in two forms, i.e., (a) a pellet and (b) a thin-film with the thickness of 50 μm. The primary purpose of the thin film hydrophobic catalyst was to reduce the platinum usage in the reactor. The activity of the catalyst was measured in a trickle bed reactor at atmospheric pressure and temperature of 20 ∼ 70 deg C. It has been found that the employment of the thin-film catalyst reduced the platinum usage to 1/5 of the reactor in the case of using a conventional catalyst. Platinum particles on the thin-film catalyst work efficiently because the reactants were easily diffused to the active sites. It has also been found that the isotopic exchange rate with the thin-film catalyst increased with the increase in the ratio of liquid/gas and increased with the rise of the reaction temperature. It was found from an endurance test that the activity of the thin-film catalyst decreased gradually due to the condensation of water vapor in the catalyst, but was regenarated by heating the catalyst to remove the condensed water. (author)

  2. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  3. Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

    International Nuclear Information System (INIS)

    Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

    2000-01-01

    Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

  4. Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

    Directory of Open Access Journals (Sweden)

    Veronika Vavrunkova

    2007-01-01

    Full Text Available We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

  5. Hydrogen induced changes in the optical properties of Pd capped V thin films

    International Nuclear Information System (INIS)

    Azofeifa, D.E.; Clark, N.; Vargas, W.E.; Solís, H.; Pálsson, G.K.; Hjörvarsson, B.

    2013-01-01

    Highlights: •Optical transmission of a Pd/V layers is measured [350–950 nm range] at 22 and 140 °C. •Pd caped crystalline V films are optically characterized as function of H absorption. •Spectral dependence of the dielectric function of hydrogenated V film is calculated. •Changes due to H absorption in absorption coefficients of V and Pd films are calculated. •H concentration in V thin films is calculated from change in absorption coefficient. -- Abstract: Optical properties of 50 nm thick single crystal vanadium films deposited on double side polished MgO substrates have been obtained from spectrophotometric measurements. The films were coated with a polycrystalline Pd layer (5 nm thick) to protect them from oxidation and to favor absorption of atomic hydrogen. Electrical resistance was recorded while hydrogen pressure was increased slowly up to 750 mbar keeping temperature constant. Simultaneously, under normal incidence of non-polarized radiation [350–950 nm], transmittance spectra of this Pd/V/MgO system were measured. These were numerically inverted to obtain the spectral behavior of the Pd, V, PdH y and VH x dielectric functions at 22 and 140 °C, and at 750 mbar. Hydrogen concentration in V film was first determined from a resisto-optical method. Finally, we demonstrate the possibility to determine the concentration in the Pd and the V layers independently, solely using the changes in the optical transmission

  6. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  7. Reversible swelling-shrinking behavior of hydrogen-bonded free-standing thin film stabilized by catechol reaction.

    Science.gov (United States)

    Sun, Jiaxing; Su, Chao; Zhang, Xuejian; Yin, Wenjing; Xu, Jian; Yang, Shuguang

    2015-05-12

    Dopamine-modified poly(acrylic acid) (PAA-dopa) and poly(vinylpyrrolidone) (PVPON) was layer-by-layer (LbL) assembled to prepare thin film based on hydrogen bonding. The carboxylic group of acrylic acid and the phenolic hydroxyl group of dopamine can both act as hydrogen bond donors. The critical assembly and the critical disintegration pH values of PVPON/PAA-dopa film are enhanced compared with PVPON/PAA film. The hydrogen-bonded PVPON/PAA-dopa thin film can be cross-linked via catechol chemistry of dopamine. After cross-linking, the film can be exfoliated from the substrate in alkaline solution to get a free-standing film. Moreover, by tuning the pH value, deprotonation and protonation of PAA will make the hydrogen bond in the film break and reconstruct, which induces that the free-standing film has a reversible swelling-shrinking behavior.

  8. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    KAUST Repository

    Wang, Hsin-Ping

    2016-06-08

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

  9. Super hydrogen and helium barrier with polyelectolyte nanobrick wall thin film.

    Science.gov (United States)

    Tzeng, Ping; Lugo, Elva L; Mai, Garret D; Wilhite, Benjamin A; Grunlan, Jaime C

    2015-01-01

    In an effort to impart light gas (i.e., H2 and He) barrier to polymer substrates, thin films of polyethylenimine (PEI), poly(acrylic acid) (PAA), and montmorrilonite (MMT) clay are deposited via layer-by-layer (LbL) assembly. A five "quadlayer" (122 nm) coating deposited on 51 μm polystyrene is shown to lower both hydrogen and helium permeability three orders of magnitude against bare polystyrene, demonstrating better performance than thick-laminated ethylene vinyl-alcohol (EVOH) copolymer film and even metallized polyolefin/polyester film. These excellent barrier properties are attributed to a "nanobrick wall" structure. This highly flexible coating represents the first demonstration of an LbL deposited film with low hydrogen and helium permeability and is an ideal candidate for several packaging and protection applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

    2014-01-01

    Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

  11. Effect of hydrogen passivation on polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Ledinský, Martin; Oswald, Jiří; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.

    2005-01-01

    Roč. 487, - (2005), s. 152-156 ISSN 0040-6090 R&D Projects: GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GD202/05/H003 Institutional research plan: CEZ:AV0Z10100521 Keywords : hydrogen passivation * polycrystalline silicon * photoluminescence * Raman spectroscopy * Si-H 2 * hydrogen molecules Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.569, year: 2005

  12. Plasma CVD of hydrogenated boron-carbon thin films from triethylboron

    Science.gov (United States)

    Imam, Mewlude; Höglund, Carina; Schmidt, Susann; Hall-Wilton, Richard; Birch, Jens; Pedersen, Henrik

    2018-01-01

    Low-temperature chemical vapor deposition (CVD) of B—C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B—C films. Herein, we demonstrate plasma CVD of B—C thin films using triethylboron (TEB) as a single source precursor in an Ar plasma. We show that the film density and B/C ratio increases with increasing plasma power, reaching a density of 2.20 g/cm3 and B/C = 1.7. This is attributed to a more intense energetic bombardment during deposition and more complete dissociation of the TEB molecule in the plasma at higher plasma power. The hydrogen content in the films ranges between 14 and 20 at. %. Optical emission spectroscopy of the plasma shows that BH, CH, C2, and H are the optically active plasma species from TEB. We suggest a plasma chemical model based on β-hydrogen elimination of C2H4 to form BH3, in which BH3 and C2H4 are then dehydrogenated to form BH and C2H2. Furthermore, C2H2 decomposes in the plasma to produce C2 and CH, which together with BH and possibly BH3-x(C2H5)x are the film forming species.

  13. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

    KAUST Repository

    Salas Villaseñor, Ana L.

    2014-06-01

    Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

  14. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  15. Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

    Science.gov (United States)

    Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

  16. On the effects of implanted hydrogen on photoelectronic properties of CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahdjoubi, L.; Benmalek, M.

    1987-01-01

    The purpose of this work is to study the effect of ion-implantation in CdS thin films. This study was done from the point of view to improve the control of the photoelectric properties of this compound. Thus, several materials such as In, Ga, Cl, Cu and Ag which are commonly used as dopants in CdS, have been implanted and their effects were nearly similar to those of classical doping methods. However, hydrogene leads to somewhat inexpected results since, as we are going to see, drastical changes occur in the photoelectronic properties of the thus treated CdS films.

  17. Defects generation by hydrogen passivation of polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Ledinský, Martin; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.; Boldyryeva, Hanna; Macková, Anna; Peřina, Vratislav

    2006-01-01

    Roč. 80, - (2006), s. 653-657 ISSN 0038-092X R&D Projects: GA MŽP(CZ) SM/300/1/03; GA MŽP(CZ) SN/3/172/05; GA AV ČR IAA1010413; GA ČR(CZ) GD202/05/H003; GA AV ČR IAA1010316 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : hydrogen passivation * ERDA * photoluminescence * Raman spectroscopy * Si-H 2 bonding * H 2 molecules * grain size. Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.431, year: 2006

  18. Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

    International Nuclear Information System (INIS)

    Drenik, A.; Vesel, A.; Mozetic, M.

    2006-01-01

    We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

  19. Deposition of Pd–Ag thin film membranes on ceramic supports for hydrogen purification/separation

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, A.I. [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal); Pérez, P.; Rodrigues, S.C.; Mendes, A.; Madeira, L.M. [LEPAE, Chemical Engineering Department, Faculty of Engineering, University of Porto, Rua Dr. Roberto Frias s/n, 4200-465 Porto (Portugal); Tavares, C.J., E-mail: ctavares@fisica.uminho.pt [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal)

    2015-01-15

    Highlights: • Thin film Pd–Ag membranes have been produced for hydrogen selectivity. • Magnetron sputtering yields Pd–Ag compact films for atomic H diffusion. • The thin film Pd–Ag membranes yielded a selectivity of α (H{sub 2}/N{sub 2}) = 10. - Abstract: Pd–Ag based membranes supported on porous α-Al{sub 2}O{sub 3} (doped with yttria-stabilized zirconia) were studied for hydrogen selective separation. Magnetron sputtering technique was employed for the synthesis of thin film membranes. The hydrogen permeation flux is affected by the membrane columnar structure, which is formed during deposition. From scanning electron microscopy analysis, it was observed that different sputtering deposition pressures lead to distinct columnar structure growth. X-ray diffraction patterns provided evidence of a Pd–Ag solid solution with an average crystallite domain size of 21 nm, whose preferential growth can be altered by the deposition pressure. The gas-permeation results have shown that the Pd–Ag membrane supported on porous α-Al{sub 2}O{sub 3} is selective toward H{sub 2}. For optimized membrane synthesis conditions, the permeance toward N{sub 2} is 0.076 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1} at room temperature, whereas for a pressure difference of 300 kPa the H{sub 2}-flux is of the order of ca. 0.21 mol m{sup −2} s{sup −1}, which corresponds to a permeance of 0.71 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1}, yielding a selectivity of α (H{sub 2}/N{sub 2}) = 10. These findings suggest that the membrane has a reasonable capacity to selectively permeate this gas.

  20. Deposition of Pd–Ag thin film membranes on ceramic supports for hydrogen purification/separation

    International Nuclear Information System (INIS)

    Pereira, A.I.; Pérez, P.; Rodrigues, S.C.; Mendes, A.; Madeira, L.M.; Tavares, C.J.

    2015-01-01

    Highlights: • Thin film Pd–Ag membranes have been produced for hydrogen selectivity. • Magnetron sputtering yields Pd–Ag compact films for atomic H diffusion. • The thin film Pd–Ag membranes yielded a selectivity of α (H 2 /N 2 ) = 10. - Abstract: Pd–Ag based membranes supported on porous α-Al 2 O 3 (doped with yttria-stabilized zirconia) were studied for hydrogen selective separation. Magnetron sputtering technique was employed for the synthesis of thin film membranes. The hydrogen permeation flux is affected by the membrane columnar structure, which is formed during deposition. From scanning electron microscopy analysis, it was observed that different sputtering deposition pressures lead to distinct columnar structure growth. X-ray diffraction patterns provided evidence of a Pd–Ag solid solution with an average crystallite domain size of 21 nm, whose preferential growth can be altered by the deposition pressure. The gas-permeation results have shown that the Pd–Ag membrane supported on porous α-Al 2 O 3 is selective toward H 2 . For optimized membrane synthesis conditions, the permeance toward N 2 is 0.076 × 10 −6 mol m −2 s −1 Pa −1 at room temperature, whereas for a pressure difference of 300 kPa the H 2 -flux is of the order of ca. 0.21 mol m −2 s −1 , which corresponds to a permeance of 0.71 × 10 −6 mol m −2 s −1 Pa −1 , yielding a selectivity of α (H 2 /N 2 ) = 10. These findings suggest that the membrane has a reasonable capacity to selectively permeate this gas

  1. Quantitative analysis of hydrogen in thin films using Time-of-Flight Elastic Recoil Detection Analysis

    International Nuclear Information System (INIS)

    Siketic, Zdravko; Radovic, Iva Bogdanovic; Jaksic, Milko

    2010-01-01

    Determination of atomic concentrations in thin films is one of the key problems in materials science. Time-of-Flight Elastic Recoil Detection Analysis is a powerful method for depth profiling of light and medium mass elements in near surface layers of material. However, due to poor detection efficiency those spectrometers are not commonly used for hydrogen analysis. We have performed some improvements in order to increase detection efficiency and to make spectrometer more suitable for hydrogen analysis. The spectrometer performance was tested on amorphous Si samples implanted with H - and D - and hydrogenised Si standard reference sample. Sensitivity for hydrogen in silicon matrix was found to be several tens of ppm with a surface depth resolution of ∼ 15 nm.

  2. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  3. Hydrogen desorption in nanocrystalline MgH{sub 2} thin films at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ares, J.R., E-mail: joser.ares@uam.e [Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid (Spain); Leardini, F.; Diaz-Chao, P.; Bodega, J. [Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid (Spain); Koon, D.W. [Physics Department, St Lawrence University, Canton, NY, 13617 (United States); Ferrer, I.J.; Fernandez, J.F.; Sanchez, C. [Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid (Spain)

    2010-04-16

    Hydrogen desorption process of Pd-capped magnesium hydride thin films of different thicknesses was investigated. Decomposition of magnesium hydride into magnesium under air exposure is observed in all investigated films. During decomposition no novel crystalline phases are detected. Desorption process was qualitatively analysed and it was concluded that is thermodynamically driven controlled by a nucleation and growth or by an interphase controlled mechanism. Moreover, H-kinetics investigation of desorption process was carried out by thermal desorption spectroscopy. Decomposition of MgH{sub 2} films occurs at T{sub d} {approx} 148 {sup o}C and the process seems to be controlled by a bidimensional interphase mechanism with an activation energy of 135 {+-} 20 kJ/mol H{sub 2}. No significant influence of thickness and crystallite size on desorption temperature is observed and obtained activation energy is similar to that of milled bulk magnesium.

  4. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  5. Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films

    NARCIS (Netherlands)

    Eijt, S.W.H.; Kind, R.; Singh, S.; Schut, H.; Legerstee, W.J.; Hendrikx, R.W.A.; Svetchnikov, V.L.; Westerwaal, R.J.; Dam, B.

    2009-01-01

    We report positron depth-profiling studies on the hydrogen sorption behavior and phase evolution of Mg-based thin films. We show that the main changes in the depth profiles resulting from the hydrogenation to the respective metal hydrides are related to a clear broadening in the observed electron

  6. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  7. Adhesion improvement of hydrogenated diamond-like carbon thin films by pre-deposition plasma treatment of rubber substrate

    NARCIS (Netherlands)

    Bui, X.L.; Pei, Y.T.; Mulder, E.D.G.; Hosson, J.Th.M. De

    2009-01-01

    For reduction of friction and enhancement of wear resistance of dynamic rubber seals, thin films of hydrogenated diamond-like carbon (DLC) have been deposited on hydrogenated nitrile butadiene rubber (HNBR) via magnetron-enhanced plasma chemical vapor deposition (ME-PCVD). Pre-deposition plasma

  8. Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

    Science.gov (United States)

    Almaev, A. V.; Gaman, V. I.

    2017-11-01

    Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at temperatures from 623 to 773 K and absolute humidity from 2.5 to 20 g/m3. Experimental data are discussed using expressions obtained within the framework of a model that takes into account the presence of three types of adsorbed particles (O¯, OH, and OH¯) on the surface of SnO2 nanocrystals. The characteristics of the sensors based on thin Pt/Pd/SnO2:Sb films (the first series) are compared with those of Au/SnO2:Sb, Au films (the second series). It is found that the degree of dissociation of molecular hydrogen into atoms during adsorption on the sensor under interaction with Au particles on the SnO2 surface is 4 times greater than that under interaction with Pt/Pd particles. The degree of dissociation of H2O molecules into hydrogen atoms and hydroxyl groups in pure moist air on the surface of the sensors of the second series is 1.6 times greater than that for the sensors of the first series. Thus, gold is a more effective stimulator of the dissociation of H2 and H2O molecules than platinum and palladium. A formula is obtained that describes more accurately the dependence of the response of the sensors of both series to the effect of hydrogen on the concentration of this gas and on the temperature of the measuring devices.

  9. Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

    Science.gov (United States)

    Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

    2010-10-01

    Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

  10. Thin Film

    African Journals Online (AJOL)

    a

    organic substances. KEY WORDS: Photoelectrocatalysis, Titanium dioxide, Cuprous oxide, Composite thin film, Photo electrode. INTRODUCTION ... reddish p-type semiconductor with a direct band gap of 2.0-2.2 eV [18, 19]. ... Photoelectrocatalytic removal of color from water using TiO2 and TiO2/Cu2O electrodes. Bull.

  11. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Aka, B.

    1989-04-01

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

  12. A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Vandentop, G.J.

    1990-07-01

    Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

  13. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid ...

    Indian Academy of Sciences (India)

    At higher Ar concentration in plasma, Ag content increased whereas deposition rate of the film decreased. FTIR study showed that the films contained a significant amount of hydrogen and, as a result of an increase in the Ag content in the hydrogenated DLC film, s p 2 bond content also increased. The TEM cross sectional ...

  14. thin films

    Indian Academy of Sciences (India)

    The anionic precursor was 1% H2O2 solution. Both the cationic and anionic precursors were kept at room temperature (∼300 K). One SILAR cycle consists of two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with H2O2 solution for 40 s to form stable SnO2:H2O thin film on the substrate.

  15. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  16. Hydrogen Absorption in Metal Thin Films and Heterostructures Investigated in Situ with Neutron and X-ray Scattering

    Directory of Open Access Journals (Sweden)

    Sara J. Callori

    2016-05-01

    Full Text Available Due to hydrogen possessing a relatively large neutron scattering length, hydrogen absorption and desorption behaviors in metal thin films can straightforwardly be investigated by neutron reflectometry. However, to further elucidate the chemical structure of the hydrogen absorbing materials, complementary techniques such as high resolution X-ray reflectometry and diffraction remain important too. Examples of work on such systems include Nb- and Pd-based multilayers, where Nb and Pd both have strong affinity to hydrogen. W/Nb and Fe/Nb multilayers were measured in situ with unpolarized and polarized neutron reflectometry under hydrogen gas charging conditions. The gas-pressure/hydrogen-concentration dependence, the hydrogen-induced macroscopic film swelling as well as the increase in crystal lattice plane distances of the films were determined. Ferromagnetic-Co/Pd multilayers were studied with polarized neutron reflectometry and in situ ferromagnetic resonance measurements to understand the effect of hydrogen absorption on the magnetic properties of the system. This electronic effect enables a novel approach for hydrogen sensing using a magnetic readout scheme.

  17. Chalcopyrite Thin Film Materials for Photoelectrochemical Hydrogen Evolution from Water under Sunlight

    Directory of Open Access Journals (Sweden)

    Hiroyuki Kaneko

    2015-07-01

    Full Text Available Copper chalcopyrite is a promising candidate for a photocathode material for photoelectrochemical (PEC water splitting because of its high half-cell solar-to-hydrogen conversion efficiency (HC-STH, relatively simple and low-cost preparation process, and chemical stability. This paper reviews recent advances in copper chalcopyrite photocathodes. The PEC properties of copper chalcopyrite photocathodes have improved fairly rapidly: HC-STH values of 0.25% and 8.5% in 2012 and 2015, respectively. On the other hand, the onset potential remains insufficient, owing to the shallow valence band maximum mainly consisting of Cu 3d orbitals. In order to improve the onset potential, we explored substituting Cu for Ag and investigate the PEC properties of silver gallium selenide (AGSe thin film photocathodes for varying compositions, film growth atmospheres, and surfaces. The modified AGSe photocathodes showed a higher onset potential than copper chalcopyrite photocathodes. It was demonstrated that element substitution of copper chalcopyrite can help to achieve more efficient PEC water splitting.

  18. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Vesel, Alenka, E-mail: alenka.vesel@guest.arnes.si [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Mozetic, Miran [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Balat-Pichelin, Marianne [PROMES-CNRS Laboratory, 7 Rue du four solaire, 66120 Font Romeu Odeillo (France)

    2016-11-30

    Highlights: • Oxidized Inconel alloy was exposed to hydrogen at temperatures up to 1500 K. • Oxide reduction in hydrogen plasma started at approximately 1300 K. • AES depth profiling revealed complete reduction of oxides in plasma. • Oxides were not reduced, if the sample was heated just in hydrogen atmosphere. • Surface of reduced Inconel preserved the same composition as the bulk material. - Abstract: Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  19. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  20. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  1. On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Qiu, Y.; Kunz, O.; Fejfar, Antonín; Ledinský, Martin; Teik Chan, B.; Gordon, I.; Van Gestel, D.; Venkatachalm, S.; Egan, R.

    2014-01-01

    Roč. 122, MAR (2014), s. 31-39 ISSN 0927-0248 R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional support: RVO:68378271 Keywords : silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.337, year: 2014 http://www.sciencedirect.com/science/article/pii/S0927024813006016

  2. Epitaxial thin films

    Science.gov (United States)

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  3. Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

    Directory of Open Access Journals (Sweden)

    V. S. Waman

    2011-01-01

    Full Text Available Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C without hydrogen dilution of silane (SiH4. A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD, Fourier transform infrared (FTIR spectroscopy, atomic force microscopy (AFM, and UV-visible (UV-Vis spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s, which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63% and crystallite size (3.6–6.0 nm can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2 and (Si–H2n complexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail.

  4. Growth and hydrogenation of ultra-thin Mg films on Mo(111)

    DEFF Research Database (Denmark)

    Ostenfeld, Christopher Worsøe; Davies, Jonathan Conrad; Vegge, Tejs

    2005-01-01

    The growth and hydrogenation of ultra-thin magnesium overlayers have been investigated on a Mo(1 1 1) single crystal substrate. For increasing magnesium coverages we observe intermediate stages in the TPD and LEISS profiles, which illustrate the transition from one monolayer to multilayer growth....... are necessary to sustain this purely adsorbed state. Using predissociated hydrogen we show that the hydride formation is self-stabilizing and the hydride only decomposes at a temperature where a considerable desorption of magnesium occurs....

  5. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  6. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  7. Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sta, I., E-mail: imenstalpv@yahoo.fr [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Jlassi, M. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Kandyla, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Hajji, M. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); National School of Electronics and Telecommunications of Sfax, Sfax Technopark, BP 1163, CP 3018 Sfax (Tunisia); Koralli, P. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Allagui, R. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Kompitsas, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Ezzaouia, H. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2015-03-25

    Highlights: • NiO:Li sensors were able to detect 1000 ppm hydrogen concentration in air. • The operation temperature was as low as 140 °C. • Performance of sensors was significantly improved by Li doping. - Abstract: Hydrogen sensors have been prepared using nickel oxide (NiO) and lithium-doped nickel oxide (NiO:Li) thin films, deposited on glass substrates by the sol–gel spin coating technique. The surface morphology, structure, optical and electrical properties of the obtained films were studied. Hydrogen sensing results are presented for three operating temperatures (140, 160, and 180 °C) and for hydrogen concentrations ranging from 1000 to 15,000 ppm in synthetic air. The NiO and NiO:Li (2% and 8% doping concentrations) sensors show maximum responses for the operating temperature of 180 °C. When tested at different hydrogen concentrations in air, the lithium-doped NiO sensors showed a higher response than the undoped NiO films.

  8. Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

    International Nuclear Information System (INIS)

    Sta, I.; Jlassi, M.; Kandyla, M.; Hajji, M.; Koralli, P.; Allagui, R.; Kompitsas, M.; Ezzaouia, H.

    2015-01-01

    Highlights: • NiO:Li sensors were able to detect 1000 ppm hydrogen concentration in air. • The operation temperature was as low as 140 °C. • Performance of sensors was significantly improved by Li doping. - Abstract: Hydrogen sensors have been prepared using nickel oxide (NiO) and lithium-doped nickel oxide (NiO:Li) thin films, deposited on glass substrates by the sol–gel spin coating technique. The surface morphology, structure, optical and electrical properties of the obtained films were studied. Hydrogen sensing results are presented for three operating temperatures (140, 160, and 180 °C) and for hydrogen concentrations ranging from 1000 to 15,000 ppm in synthetic air. The NiO and NiO:Li (2% and 8% doping concentrations) sensors show maximum responses for the operating temperature of 180 °C. When tested at different hydrogen concentrations in air, the lithium-doped NiO sensors showed a higher response than the undoped NiO films

  9. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid ...

    Indian Academy of Sciences (India)

    Dr S Taktak is grateful to the Scientific and Technological. Research Council of Turkey (TUBITAK) for the award of the. 2219 International Post Doctoral Research Fellowship. References. Ahmed S F, Moon M W and Lee K R 2008 Appl. Phys. Lett. 92. 193502. Ahmed S F, Moon M W and Lee K R 2009 Thin Solid Films 517.

  10. Structural characterization of the interface structure of amorphous silicon thin films after post-deposition argon or hydrogen plasma treatment

    Science.gov (United States)

    Neumüller, Alex; Sergeev, Oleg; Vehse, Martin; Agert, Carsten

    2017-05-01

    The interfaces in silicon thin film solar cells and silicon heterojunction solar cells are considered to be very important for the solar cell conversion efficiency. This work studies the interface properties of hydrogenated amorphous silicon thin films deposited on crystalline silicon wafers after post-deposition hydrogen plasma treatment (HPT) or argon plasma treatment (APT). The investigation extends our previous study by examining the structural changes resulting from the post-deposition plasma treatment on silicon thin film solar cells. We analyzed the ellipsometry and infrared spectra of our samples to gain a deeper understanding of the fundamental plasma treatment effects. By using post-deposition APT and HPT, we were able to reduce the material stress and improve the structure of these layers. Our results show that APT yields a more compact material with fewer voids and less distinct localized tail states. We discuss the effect of APT and HPT on the most crucial interface in silicon heterojunction solar cells, the i-a-Si:H/c-Si interface. We propose to introduce APT as a post-deposition process step in the fabrication of silicon heterojunction solar cells.

  11. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  12. Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Hwan; Kim, Sung Ki; Lee, Jong-Kwon; Lee, Seok-Woo; Lee, Hong Koo; Peak, Seung Han; Park, Yong-In; Kim, Chang-Dong; Hwang, Yong Kee; Chung, In-Jae [LG Display R and D Center, Paju, Gyongki-do, 413-811 (Korea)

    2010-04-15

    The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. High-mobility transparent conductive thin films of cerium-doped hydrogenated indium oxide

    Science.gov (United States)

    Kobayashi, Eiji; Watabe, Yoshimi; Yamamoto, Tetsuya

    2015-01-01

    We have developed 100-nm-thick cerium-doped hydrogenated indium oxide (ICO:H) films with a superior Hall mobility of 130-145 cm2 V-1 s-1. The ICO:H films deposited at 150 °C by dc arc-discharge ion plating were post-annealed at 200 °C. The relationship between the Hall mobility and carrier density of the polycrystalline ICO:H films shows that the carrier transport is limited by an ionized impurity scattering mechanism inside the grains. The surfaces of the ICO:H films were found to be very smooth and clear grain-boundary areas were not observed.

  14. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Sel, Kıvanç; Güneş, İbrahim

    2012-01-01

    Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

  15. Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method

    Science.gov (United States)

    Dogan, Mansuroglu; Kadir, Goksen; Sinan, Bilikmen

    2015-06-01

    Methane (CH4) plasma was used to produce amorphous hydrogenated carbon (a-C:H) films by a single capacitively coupled radio frequency (RF) powered plasma system. The system consists of two parallel electrodes: the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground. Thin films were deposited on glass slides with different sizes and on silicon wafers. The influence of the plasma species on film characteristics was studied by changing the plasma parameters. The changes of plasma species during the deposition were investigated by optical emission spectroscopy (OES). The structural and optical properties were analyzed via Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) and UV-visible spectroscopy, and the thicknesses of the samples were measured by a profilometer. The sp3/sp2 ratio and the existing H atoms play a significant role in the determination of the chemical properties of thin films in the plasma. The film quality and deposition rate were both increased by raising the power and the flow rate.

  16. Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers

    Science.gov (United States)

    van den Bos, R. A. J. M.; Reinink, J.; Lopaev, D. V.; Lee, C. J.; Benschop, J. P. H.; Bijkerk, F.

    2018-03-01

    A Mo/Si multilayer film may blister under hydrogen exposure. In this paper, we investigate the impact of intrinsic stress on blister formation in multilayers by varying the Si thickness between 3.4–11 nm and changing the hydrogen ion exposure conditions. Increasing the thickness of a-Si is found to introduce a higher average compressive stress in the multilayer film. Measurements of the average film stress before and after hydrogen exposure did not reveal a correlation between stress relaxation and the observation of surface blisters. Comparing the experimentally observed blister size distribution to that predicted by elastic models of blistering due to pressure, and thin film buckling showed that increasing hydrogen pressure under the blister cap is the main cause of the observed blisters. It is also shown that hydrogen diffusion plays an essential role in the blister formation process as sufficient hydrogen is required to pressurize the blister.

  17. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  18. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  19. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Hadjadj, Aomar, E-mail: aomar.hadjadj@univ-reims.fr; Larbi, Fadila; Gilliot, Mickaël [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM, EA 4695), Université de Reims Champagne-Ardenne (France); Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM, CNRS UMR 7647), Ecole Polytechnique (France)

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H{sub 2} plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  20. Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

    Energy Technology Data Exchange (ETDEWEB)

    Catalán, S.; Álvarez-Fraga, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Salas, E. [Spline CRG, ESRF, 38043 Grenoble (France); Ramírez-Jiménez, R. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, Leganés, 28911 Madrid (Spain); Rodriguez-Palomo, A.; Andrés, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain)

    2016-11-15

    Highlights: • The charge mobility in IMO films is correlated with its hydrogen content. • The mobility behavior is explained by the presence of OH{sup −} groups in IMO films. • Mo{sup 4+} is identified in transparent conductive IMO by X-ray absorption spectroscopy. - Abstract: The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H{sub 2} in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H{sub 2} content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo{sup 4+} is placed at the In site of the indium oxide.

  1. Hydrogen incorporation by plasma treatment gives mesoporous black TiO 2 thin films with visible photoelectrochemical water oxidation activity

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Syed Z.; Reed, Allen; Nagpure, Suraj; Wanninayake, Namal; Browning, James F.; Strzalka, Joseph; Kim, Doo Young; Rankin, Stephen E.

    2018-05-01

    In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H2 plasma treatment makes TiO2 films black, with broad-spectrum enhancement of visible light absorption, and XPS analysis shows peak for Ti3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO2 is accompanied by significant hydrogen uptake and not just Ti3+ generation or surface disordering.

  2. Thin Film Processes

    CERN Document Server

    Vossen, John L.

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application

  3. Evidence of Plasmonic Induced Photocatalytic Hydrogen Production on Pd/TiO2 Upon Deposition on Thin Films of Gold

    KAUST Repository

    Khan, M. A.

    2017-02-28

    H2-production from renewables using sunlight is probably the holy grail of modern science and technology. Among the many approaches for increasing reaction rates, by increasing light absorption, plasmonic materials are often invoked. Yet, most plasmonic metals on semiconductors are also good for Schottky barrier formation. In this work, we are presenting evidences of de-coupling the plasmonic from Schottky effects on photoreaction. To conduct this we have systematically changed the under-layer gold film thickness and associated particle size. On top of the thin film layer, we have deposited the exact amount of a prototypical Schottky-based photo-catalyst (Pd/TiO2). We found up to 4 times increase in the H2-production rate at a critical Au film thickness (8 nm-thick). Below this thickness, the plasmonic response is not too strong while above it, the PR decays in favor of the Drude absorption mode. The reaction requires the presence of both UV (to excite the semiconductor) and visible light (to excite Au particles) in order to obtain high hydrogen production, 800 µmol/gCatal.min (probably the highest direct hydrogen (not current) production rate reported on a performing catalyst). The enhancement origin is quantitatively traced to its computed electric field strength (EFS). Adding a dielectric (SiO2) in between the Au thin layer and the catalyst exponentially decreased the reaction rate and EFS, with increasing its thickness. This work indicates the possibility of making an active and stable photo-catalyst from fundamental concepts yet further progress on the structural (technological) front is needed to make a practical catalyst.Graphical abstract

  4. Hydrogen doped thin film diamond. Properties and application for electronic devices

    International Nuclear Information System (INIS)

    Looi, H.J.

    2000-01-01

    The face centered cubic allotrope of carbon, diamond, is a semiconducting material which possesses a valuable combination of extreme properties such as super-hardness, highest thermal conductivity, chemical hardness, radiation hardness, wide bandgap and others. Advances in chemical vapour deposition (CVD) technology have lead to diamond becoming available in previously unattainable forms for example over large areas and with controllable purity. This has generated much research interest towards developing the knowledge and processing technology that would be necessary to fully exploit these extreme properties. Electronic devices fabricated on oxidised boron doped polycrystalline CVD diamond (PCD) displayed very poor and inconsistent characteristic. As a result, many electronic applications of polycrystalline diamond films were confined to ultra-violet (UV) and other forms of device which relied on the high intrinsic resistivity on undoped diamond films. If commercially accessible PCD films are to advance in areas which involve sophisticated electronic applications or to compete with existing semiconductors, the need for a more reliable and fully ionised dopant is paramount. This thesis describes a unique dopant discovered within the growth surface of PCD films. This dopant is related to hydrogen which arises during the growth of diamond films. The aim of this study is to characterise and identify possible applications for this form of dopant. The mechanism for carrier generation remains unknown and based on the experimental results in this work, a model is proposed. The Hall measurements conducted on this conductive layer revealed a p-type nature with promising properties for electronic device application. A more detail study based on electrical and surface science methods were carried out to identify the stability and operating conditions for this dopant. The properties of metal-semiconductor contacts on these surfaces were investigated. The fundamental knowledge

  5. Synthesis and characterization of boron-oxygen-hydrogen thin films at low temperatures

    International Nuclear Information System (INIS)

    Music, D.; Koelpin, H.; Atiser, A.; Kreissig, U.; Bobek, T.; Hadam, B.; Schneider, J.M.

    2005-01-01

    We have studied the influence of synthesis temperature on chemical composition and mechanical properties of X-ray amorphous boron-oxygen-hydrogen (B-O-H) films. These B-O-H films have been synthesized by RF sputtering of a B-target in an Ar atmosphere. Upon increasing the synthesis temperature from room temperature to 550 deg. C, the O/B and H/B ratios decrease from 0.73 to 0.15 and 0.28 to 0.07, respectively, as determined by elastic recoil detection analysis. It is reasonable to assume that potential sources of O and H are residual gas and laboratory atmosphere. The elastic modulus, as measured by nanoindentation, increases from 93 to 214 GPa, as the O/B and H/B ratios decreases within the range probed. Hence, we have shown that the effect of impurity incorporation on the elastic properties is extensive and that the magnitude of the incorporation is a strong function of the substrate temperature

  6. Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

    Science.gov (United States)

    Acosta, E.; Wight, N. M.; Smirnov, V.; Buckman, J.; Bennett, N. S.

    2017-11-01

    Thermoelectric technology has not yet been able to reach full-scale market penetration partly because most commercial materials employed are scarce/costly, environmentally unfriendly and in addition provide low conversion efficiency. The necessity to tackle some of these hurdles leads us to investigate the suitability of n-type hydrogenated microcrystalline silicon (μc-Si: H) in the fabrication of thermoelectric devices, produced by plasma enhanced chemical vapour deposition (PECVD), which is a mature process of proven scalability. This study reports an approach to optimise the thermoelectric power factor (PF) by varying the dopant concentration by means of post-annealing without impacting film morphology, at least for temperatures below 550°C. Results show an improvement in PF of more than 80%, which is driven by a noticeable increase of carrier mobility and Seebeck coefficient in spite of a reduction in carrier concentration. A PF of 2.08 × 10-4 W/mK2 at room temperature is reported for n-type films of 1 μm thickness, which is in line with the best values reported in recent literature for similar structures.

  7. Mechanical stress and stress release channels in 10–350 nm palladium hydrogen thin films with different micro-structures

    International Nuclear Information System (INIS)

    Wagner, Stefan; Kramer, Thilo; Uchida, Helmut; Dobron, Patrik; Cizek, Jakub; Pundt, Astrid

    2016-01-01

    For thin metal films adhered to rigid substrates hydrogen uptake results in compressive stresses in the GPa range. Stresses affect the thermodynamics as well as the durability of thin films, but many films can release stress above critical stress values. Depending on the films' thickness, microstructure and adhesion to the substrate, which determine the energy available in the nano-sized system, stress release is conducted via different release mechanisms. To evaluate the different mechanisms, Palladium thin films ranging from 10 nm to 350 nm and with three different types of microstructures (nanocrystalline, multi-oriented epitaxy and three-fold epitaxy) are studied with special focus on the mechanical stress. In-situ substrate curvature measurements, XRD stress analyses and acoustic emission (AE) measurements are conducted to determine intrinsic stresses, hydrogen-induced stress changes and stress release signals. By this complementary experimental approach, different stress release mechanisms (named channels) are identified. Discrete stress relaxation (DSR) events are found already within the overall linear elastic stress-strain regime. Energies to stimulate DSRs lay well below the formation energy of dislocations, and may allow the movement of defects pre-existing in the films. For higher strain energies, all studied films can release stress by the formation of new dislocations and plastic deformation. When the adhesion to the substrate is small, an alternative release channel of film buckling opens for thick films.

  8. Scattering matrix analysis for evaluating the photocurrent in hydrogenated-amorphous-silicon-based thin film solar cells.

    Science.gov (United States)

    Shin, Myunghun; Lee, Seong Hyun; Lim, Jung Wook; Yun, Sun Jin

    2014-11-01

    A scattering matrix (S-matrix) analysis method was developed for evaluating hydrogenated amorphous silicon (a-Si:H)-based thin film solar cells. In this approach, light wave vectors A and B represent the incoming and outgoing behaviors of the incident solar light, respectively, in terms of coherent wave and incoherent intensity components. The S-matrix determines the relation between A and B according to optical effects such as reflection and transmission, as described by the Fresnel equations, scattering at the boundary surfaces, or scattering within the propagation medium, as described by the Beer-Lambert law and the change in the phase of the propagating light wave. This matrix can be used to evaluate the behavior of angle-incident coherent and incoherent light simultaneously, and takes into account not only the light scattering process at material boundaries (haze effects) but also nonlinear optical processes within the material. The optical parameters in the S-matrix were determined by modeling both a 2%-gallium-doped zinc oxide transparent conducting oxide and germanium-compounded a-Si:H (a-SiGe:H). Using the S-matrix equations, the photocurrent for an a-Si:H/a-SiGe:H tandem cell and the optical loss in semitransparent a-Si:H solar cells for use in building-integrated photovoltaic applications were analyzed. The developed S-matrix method can also be used as a general analysis tool for various thin film solar cells.

  9. Optical thin film devices

    Science.gov (United States)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  10. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, H.

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  13. Low-Cost, Fiber-Optic Hydrogen Gas Detector Using Guided-Wave, Surface-Plasmon Resonance in Chemochromic Thin Films

    International Nuclear Information System (INIS)

    Tracy, C.E.; Benson, D.K.; Haberman, D.P.; Hishmeh, G.A.; Ciszek, P.A.

    1998-01-01

    Low-cost, hydrogen-gas-leak detectors are needed for many hydrogen applications, such as hydrogen-fueled vehicles where several detectors may be required in different locations on each vehicle. A fiber-optic leak detector could be inherently safer than conventional detectors, because it would remove all detector electronics from the vicinity of potential leaks. It would also provide freedom from electromagnetic interference, a serious problem in fuel-cell-powered electric vehicles. This paper describes the design of a fiber-optic, surface-plasmon-resonance hydrogen detector, and efforts to make it more sensitive, selective, and durable. Chemochromic materials, such as tungsten oxide and certain Lanthanide hydrides, can reversibly react with hydrogen in air while exhibiting significant changes in their optical properties. Thin films of these materials applied to a sensor at the end of an optical fiber have been used to detect low concentrations of hydrogen gas in air. The coatings include a thin silver layer in which the surface plasmon is generated, a thin film of the chemochromic material, and a catalytic layer of palladium that facilitates the reaction with hydrogen. The film thickness is chosen to produce a guided-surface plasmon wave along the interface between the silver and the chemochromic material. A dichroic beam-splitter separates the reflected spectrum into a portion near the resonance and a portion away from the resonance, and directs these two portions to two separate photodiodes. The electronic ratio of these two signals cancels most of the fiber transmission noise and provides a stable hydrogen signal

  14. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  15. Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2017-07-01

    In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

  16. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-26

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system.

  17. Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

    International Nuclear Information System (INIS)

    Saito, K.; Nishimura, K.; Suzuki, H.; Ohshita, Y.; Yamaguchi, M.

    2008-01-01

    The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as N-H or N-H 2 structures. Although a higher growth temperature was required for decreasing the H concentration ([H]), it caused a decrease in the N concentration ([N]). A reduction in [H] while keeping [N] constant was necessary. By providing an intermittent supply of Ga source while continuously supplying As and N sources, [H] effectively decreased in comparison with the [H] value in the film grown at the same temperature by conventional CBE without reducing [N

  18. On the structure of thin4He films on solid hydrogen

    NARCIS (Netherlands)

    Mugele, Friedrich Gunther; Albrecht, U.; Leiderer, P.

    1994-01-01

    We have investigated the adsorption of4He onto a quench-condensed H2 film by means of surface state electrons. Oscillations in the surface state electron conductivity clearly reveal the layerwise character of the adsorption. At temperatures below 2K we have observed an anomaly in the conductivity

  19. Non-enzymatic hydrogen peroxide detection at NiO nanoporous thin film- electrodes prepared by physical vapor deposition at oblique angles

    International Nuclear Information System (INIS)

    Salazar, Pedro; Rico, Victor; González-Elipe, Agustín R.

    2017-01-01

    Highlights: • A non-enzymatic sensor for H 2 O 2 detection based on nickel thin film is reported. • Nanostructured nickel thin films are prepared by physical vapor deposition at oblique angles. • Main analytical parameters were obtained under optimal operation conditions. • Sensors depict an outstanding selectivity and a high stability. • Sensors are successfully used to determine H 2 O 2 in antiseptic solutions. - Abstract: In this work we report a non-enzymatic sensor for hydrogen peroxide (H 2 O 2 ) detection based on nanostructured nickel thin films prepared by physical vapor deposition at oblique angles. Porous thin films deposited on ITO substrates were characterized by X-ray diffraction analysis, scanning electron microcopy (SEMs), X-ray photoelectron spectroscopy (XPS) and electrochemical techniques such as Cyclic Voltammetry (CV) and Constant Potential Amperometry (CPA). The microstructure of the thin films consisted of inclined and separated Ni nanocolumns forming a porous thin layer of about 500 nm thickness. Prior to their use, the films surface was electrochemically modified and the chemical state studied by CV and XPS analysis. These techniques also showed that Ni 2+ /Ni 3+ species were involved in the electrochemical oxidation and detection of H 2 O 2 in alkaline medium. Main analytical parameters such as sensitivity (807 mA M −1 cm −2 ), limit of detection (3.22 μM) and linear range (0.011–2.4 mM) were obtained under optimal operation conditions. Sensors depicted an outstanding selectivity and a high stability and they were successfully used to determine H 2 O 2 concentration in commercial antiseptic solutions.

  20. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  1. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  2. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  3. Properties of NiO nanostructured growth using thermal dry oxidation of nickel metal thin film for hydrogen gas sensing at room temperature

    Science.gov (United States)

    Abubakar, Dauda; Ahmed, Naser M.; Mahmud, Shahrom; Algadri, Natheer A.

    2017-07-01

    A highly qualitative NiO nanostructure was synthesized using thermal dry oxidation of metallic Ni thin films on ITO/glass using the RF sputtering technique. The deposited nickel thin films were oxidized in air ambient at 550 °C inside a furnace. The structural and surface morphologies, and the electrical and gas sensing properties of the NiO nanostructure were examined. An x-ray diffraction analysis demonstrated that the NiO nanostructure has a cubic structure with orientation of the most intense peak at (2 0 0), and shows good crystalline quality. Finite-element scanning electron microscopy and energy dispersive x-ray spectroscopy results revealed O and Ni present in the treated samples, indicating a pure NiO nanostructure composition obtained with high porosity. The electrical properties of the oxidize Ni thin films showed a p-type NiO thin film semiconductor. A hydrogen gas sensing measurement was made at different operating temperatures and different gas concentrations with a detection limit of 30 ppm concentration. The sensor device shows great sensing properties with an excellent sensitivity (310%) at room temperature, which decreases with an increase in the operating temperature. Superfast response and recovery times of 6 and 0.5 s, respectively, were observed with the device at 150 °C operating temperature.

  4. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  5. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  6. Protein thin film machines.

    Science.gov (United States)

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  7. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Khalaf, Mohammed K. [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Mutlak, Rajaa H. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq); Khudiar, Ausama I., E-mail: ausamaikhudiar@yahoo.com [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Hial, Qahtan G. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H{sub 2} by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H{sub 2} concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H{sub 2} gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H{sub 2} sensors. It was shown in this study that NiO films have the capability to detect H{sub 2} concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  8. Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

    International Nuclear Information System (INIS)

    Rose, Franck; Wang, Na; Smith, Robert; Xiao, Qi-Fan; Dai, Qing; Marchon, Bruno; Inaba, Hiroshi; Matsumura, Toru; Saito, Yoko; Matsumoto, Hiroyuki; Mangolini, Filippo; Carpick, Robert W.

    2014-01-01

    We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamond-like carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 °C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp 3 fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp 2 clustering rather than hydrogen diffusion in the film.

  9. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

    Directory of Open Access Journals (Sweden)

    Haruhiko Asanuma

    2012-06-01

    Full Text Available To aid in developing next generation Cu-Mn alloy based source/drain interconnects for thin film transistor liquid crystal displays (TFT-LCDs, we have investigated the optimal structure of a pre-formed oxide layer on phosphorus doped hydrogenated amorphous silicon (n+a-Si:H that does not degrade TFT electrical properties. We use transmission electron microscopy (TEM and electron energy loss spectroscopy (EELS to examine composition depth profiles of and structural information for the Cu-Mn alloy/n+a-Si:H interface region. In aiming to achieve the same electrical properties as those of TFTs having conventional Mo source/drain electrodes, we have obtained three important findings: (1 in typical TFT-LCD manufacturing processes, no Mn complex oxide layer is formed because Mn cannot diffuse substantially into an n+a-Si:H surface during low temperature (below 300°C processes and the growth of Mn complex oxide layer would also be limited by the absence of excess oxygen species; (2 a pre-formed silicon oxide layer much thicker than 1 nm severely degrades TFT electrical properties and therefore an ultrathin (≈1 nm silicon oxide layer is required to prevent the degradation; (3 Cu diffuses into an n+a-Si:H layer at oxygen-deficient spots and thus uniform surface oxidation is required to prevent the diffusion.

  10. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  11. Laser processing for thin-film photovoltaics

    Science.gov (United States)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  12. Functional organic thin films

    OpenAIRE

    Scharnberg, Michael

    2007-01-01

    Organic thin films are used in many technological and engineering applications nowadays. They find use as coatings, sensors, detectors, as matrix materials in nanocomposites, as self-assembled monolayers for surface functionalization, as low-k dielectrics in integrated circuits and in advanced organic electronic applications like organic light emitting diodes, organic field effect transistors and organic photovoltaics (esp. organic solar cells) and many other applications. OLED displays are n...

  13. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  14. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  15. Properties of Resistive Hydrogen Sensors as a Function of Additives of 3 D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

    Science.gov (United States)

    Sevast'yanov, E. Yu.; Maksimova, N. K.; Potekaev, A. I.; Sergeichenko, N. V.; Chernikov, E. V.; Almaev, A. V.; Kushnarev, B. O.

    2017-11-01

    Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors' characteristics increases.

  16. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S.; Muhl S, S.

    2004-01-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H 2 /CH 4 in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10 -4 to 6x10 -4 Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  17. The future of rare earth thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1986-01-01

    This paper presents some recent applications in the rare earth field and also may be, some of the future new developments of laboratory works. The field of investigations will concern only materials which contain at least one rare earth element (lanthanide series, from La to Lu, Sc and Y). After a rapid survey of the experimental procedures relative to the preparation and to the analytical characterization of thin films, technological applications in various fields of research are briefly reviewed: for polycrystalline metals (superconductors, neutron absorption, photovoltaic effect...), alloys (hydrogen storage, superconductors) and compounds (target for intense neutron sources, radiology...) and for amorphous magnetic thin films. 81 refs [fr

  18. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  19. Ferromagnetic thin films

    Science.gov (United States)

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  20. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  1. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  2. Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111 Studied by Ion Beam Analysis Methods

    Directory of Open Access Journals (Sweden)

    K. Drogowska

    2012-01-01

    Full Text Available Titanium and titanium dioxide thin films were deposited onto Si(111 substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES and Rutherford backscattering spectrometry (RBS. The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM. After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300°C results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS and nuclear Reaction Analysis (N-15 method, using a 15N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.

  3. Enhanced electrical characteristics of a-Si thin films by hydrogen passivation with Nd3+:YAG laser treatment in underwater for photovoltaic applications

    Science.gov (United States)

    Vidhya, Y. Esther Blesso; Vasa, Nilesh J.

    2017-08-01

    Post deposition underwater treatment with a nanosecond Nd3+:YAG laser is proposed and demonstrated for the passivation of electrical defects in 400-1000 nm-thick a-Si thin films needed for solar cells. The proposed pulsed laser beam-overlap technique also allows simultaneous annealing and texturing. Atomic hydrogen, oxygen, and hydroxyl radicals activated by the breakdown of water by laser heating passivate the dangling bonds in the crystal grains, improving the solar cell performance. The presence of hydrogen observed after water annealing using X-ray photo electron spectroscopy (XPS), Raman spectroscopy, and attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) shows that the passivation improvement is caused by diffusion of atomic hydrogen. After underwater annealing, relative improvement in the life time of minority carriers was measured to be approximately 13% and the efficiency of n-aSi/p-cSi solar cells is found to be increased ( 2 to 3%) when compared to that in air.

  4. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  5. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  6. Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

    International Nuclear Information System (INIS)

    Oh, Teresa; Oh, Kyoung Suk; Lee, Kwang-Man; Choi, Chi Kyu

    2004-01-01

    The amorphous structure of organic-inorganic hybrid type Si-O-C thin films was studied using the first principles molecular-dynamics method with density functional techniques. The correlation between the dielectric constant and the degree of amorphous structure in organic-inorganic hybrid type Si-O-C thin films was studied. Si-O-C thin films were deposited by high-density plasma chemical vapor deposition using bis-trimethylsilylmethane and oxygen precursors. As-deposited films and films annealed at 500 deg. C were analyzed by X-ray diffraction (XRD). For quantitative analysis, the X-ray diffraction patterns of the samples were transformed to the radial distribution function (RDF) using Fourier analysis. Hybrid type Si-O-C thin films can be divided into three types using their amorphous structure and the dielectric constant: those with organic, hybrid, and inorganic properties

  7. High-pressure hydrogen materials compatibility of piezoelectric films

    Science.gov (United States)

    Alvine, K. J.; Shutthanandan, V.; Bennett, W. D.; Bonham, C. C.; Skorski, D.; Pitman, S. G.; Dahl, M. E.; Henager, C. H.

    2010-11-01

    Hydrogen is well known for materials compatibility issues, including blistering and embrittlement in metals, which are challenges for its use as the next-generation "green" fuel. Beyond metals, hydrogen also degrades piezoelectric materials used as actuators used in direct injection hydrogen internal combustion engines. We present the materials compatibility studies of piezoelectric films in high-pressure hydrogen environments. Absorption of high-pressure hydrogen and composition changes were studied with an elastic recoil detection analysis and Rutherford back-scattering spectrometry in lead zirconate titanate and barium titanate thin films. Hydrogen surface degradation in the form of blistering and Pb mixing was also observed.

  8. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  9. The kinetics of Cr layer coated on TiNi films for hydrogen absorption

    Indian Academy of Sciences (India)

    pressure by thermal evaporation on the glass substrate at room temperature. A layer of. Cr of thickness 100 Å was coated on the TiNi thin films. The changing rate of hydrogen absorption increases after Cr layer coating because Cr enhances the catalytic properties of hydrogen absorption in thin films. The rate of hydrogen ...

  10. Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen

    Science.gov (United States)

    Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Ide, Keisuke; Moram, Michelle A.; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-04-01

    This work presents the solid phase epitaxial growth of high mobility La:BaSnO3 thin films on SrTiO3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO3 thin films, and a 9%-16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO3 thin films were increased to 3 × 1019 cm-3 and in La:BaSnO3 thin films from 6 × 1019 cm-3 to 1.5 × 1020 cm-3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO3 electron effective mass of 0.27 ± 0.05 m0 and an optical mobility of 26 ± 7 cm2/Vs. As compared to La:BaSnO3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

  11. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  12. The 1989 progress report: interface physics and thin films

    International Nuclear Information System (INIS)

    Equer, B.

    1989-01-01

    The 1989 progress report of the laboratory of Interface Physics and Thin Films of the Polytechnic School (France) is presented. The properties and the interfaces of thin films, which show optoelectronic activity, are studied. The materials investigated are hydrogenated amorphous silicon compounds, amorphous compounds of silicon-germanium, silicon-carbon and silicon-mitrogen. The techniques developed for manufacturing and characterizing those materials are included. The published papers, the conferences and the Laboratory staff are listed [fr

  13. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  14. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  15. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  16. Nanocrystal thin film fabrication methods and apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  17. study in polymer thin films

    Indian Academy of Sciences (India)

    TECS

    carry out a careful study of steady state conduction of poly- styrene (PS) thin film thermo-electrets sandwiched be- tween metal electrodes both in doped and undoped forms. 2. Experimental. 2.1 Sample preparation. Polystyrene supplied by Polymer Chemical Industry,. Mumbai and naphthalene by S.G. Sisco Pvt Ltd., New ...

  18. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    1VES College of Arts, Science and Commerce, Sindhi Society, Chembur, Mumbai 400 071,. India. 2UGC-DAE Consortium for Scientific Research, R5 Shed, ... gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity. Keywords. Permalloy; NiFe thin films; NiFe ...

  19. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    resultant film could be varied right up to virtually pure aluminum oxide simply by varying the background oxygen pressure. More recently we have been...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  20. Cubic erbium trihydride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Adams, D.P., E-mail: dpadams@sandia.gov; Rodriguez, M.A.; Romero, J.A.; Kotula, P.G.; Banks, J.

    2012-07-31

    High-purity, erbium hydride thin films have been deposited onto {alpha}-Al{sub 2}O{sub 3} and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275 Degree-Sign C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11-5.20 A. The formation of cubic ErH{sub 3} is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition. - Highlights: Black-Right-Pointing-Pointer Cubic erbium trihydride thin films produced by ion beam sputter deposition. Black-Right-Pointing-Pointer Face-centered cubic metal sub-lattice verified by X-ray and electron diffraction. Black-Right-Pointing-Pointer Composition evaluated using four different techniques. Black-Right-Pointing-Pointer Film stress monitored during deposition. Black-Right-Pointing-Pointer Formation of cubic erbium trihydride attributed to a large, in-plane film stress.

  1. Surface electronic properties of discontinuous Pd films during hydrogen exposure

    International Nuclear Information System (INIS)

    Zhao, Ming; Nagata, Shinji; Shikama, Tatsuo; Inouye, Aichi; Yamamoto, Shunya; Yoshikawa, Masahito

    2011-01-01

    This paper explored the change in the surface resistance of the discontinuous palladium (Pd) films during hydrogen exposure. In our experiments, we observed a remarkable rise in the electrical resistance of the discontinuous film which consists of nano-sized particles, when it was exposed to thin hydrogen. By studying the resistance change ratio before and after hydrogen exposure, we have found that it demonstrates an inverse exponential relationship with the ratio of on-film particle radius to the inter island separation. This suggests that the change in the film resistance under hydrogen exposure is primarily associated with the variation of surface work function which is caused by the hydrogen absorption on the Pd surface. (author)

  2. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2009-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

  3. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  4. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  5. Hydrogen retention properties of lithium film

    International Nuclear Information System (INIS)

    Kanaya, Koh; Yamauchi, Yuji; Hirohata, Yuko; Hino, Tomoaki; Mori, Kintaro

    1998-01-01

    Hydrogen retention properties of Li films and lithium oxide-lithium hydroxide (Li 2 O-LiOH) mixed films were investigated by two methods, hydrogen ion irradiation and hydrogen glow discharge. In a case of the hydrogen ion irradiation, thermal desorption spectrum of hydrogen retained in Li 2 O-LiOH film had two desorption peaks at around 470 K and 570 K. The ratio between retained hydrogen and Li atom was about 0.7. In a case of the hydrogen glow discharge, the hydrogen was also gettered in Li film during the discharge. The ratio of H/Li was almost 0.9. Most of gettered hydrogen desorbed by a baking with a temperature of 370 K. On the contrary, when the Li film exposed to the atmosphere was irradiated by the hydrogen plasma, the desorption of H 2 O was observed in addition to the adsorption of H 2 . (author)

  6. Nanostructured hematite thin films for photoelectrochemical water splitting

    Science.gov (United States)

    Maabong, Kelebogile; Machatine, Augusto G. J.; Mwankemwa, Benard S.; Braun, Artur; Bora, Debajeet K.; Toth, Rita; Diale, Mmantsae

    2018-04-01

    Nanostructured hematite thin films prepared by dip coating technique were investigated for their photoelectrochemical activity for generation of hydrogen from water splitting. Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resolution field emission-scanning electron microscopy, UV-vis spectrophotometry and Raman spectroscopy. The photoelectrochemical measurements of the films showed enhanced photoresponse and cathodic shift of the onset potential upon Ti doping indicating improved transfer of photoholes at the semiconductor-electrolyte interface. Films doped with 1 at% Ti produced 0.72 mA/cm2 at 1.23 V vs RHE which is 2 times higher than current density for the pure film (0.30 mA/cm2, at 1.23 V vs RHE). Gas chromatography analysis of the films also showed enhanced hydrogen evolution at 1 at% Ti with respect to pure film.

  7. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  8. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  9. Silver nanowire-based transparent, flexible, and conductive thin film

    Directory of Open Access Journals (Sweden)

    Liu Cai-Hong

    2011-01-01

    Full Text Available Abstract The fabrication of transparent, conductive, and uniform silver nanowire films using the scalable rod-coating technique is described in this study. Properties of the transparent conductive thin films are investigated, as well as the approaches to improve the performance of transparent silver nanowire electrodes. It is found that silver nanowires are oxidized during the coating process. Incubation in hydrogen chloride (HCl vapor can eliminate oxidized surface, and consequently, reduce largely the resistivity of silver nanowire thin films. After HCl treatment, 175 Ω/sq and approximately 75% transmittance are achieved. The sheet resistivity drops remarkably with the rise of the film thickness or with the decrease of transparency. The thin film electrodes also demonstrated excellent flexible stability, showing < 2% resistance change after over 100 bending cycles.

  10. Thin film cadmium telluride and zinc phosphide solar cells

    Science.gov (United States)

    Chu, T.

    1984-10-01

    The deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates is described. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films were prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMI efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrated by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10(6) ohm-cm, and this resistivity may be reduced to about 5 x 10(4) ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films are deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts are directed to the deposition of low-resistivity zinc selenide to prepare ZnSe/An3P2 heterojunction thin-film solar cells. The zinc selenide films deposited by vaccum evaporation and chemical vapor deposition techniques are all of high resistivity.

  11. Organic Thin Films for Photonics Applications

    National Research Council Canada - National Science Library

    Thorner, John

    1999-01-01

    The Organic Thin Films for Photonics Applications Topical Meeting provided an interdisciplinary forum for the presentation and discussion of new and previously unpublished results on advanced organic...

  12. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  13. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  14. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  15. Thin film solar energy collector

    Science.gov (United States)

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  16. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  17. Controlled delamination of metal films by hydrogen loading

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, Eugen

    2008-11-18

    n this work we quantitatively determine the adhesion energy between metal films and their substrates. Therefore a new controlled buckling technique is established, applying the strong compressive in-plane stress that results in thin films clamped on rigid substrates during hydrogen loading. When the elastic energy stored in the H-loaded thin film exceeds the adhesion energy between film and substrate, delamination occurs. At the onset of delamination, a critical hydrogen concentration, a critical stress value and a critical bending of the substrate are present, which are quantitative measures for the adhesion energy and permit its calculation. As the critical values are determined at the onset of delamination, plastic deformation is negligible, which denies the quantitative determination of adhesion energies in conventional test setups. In multilayer-systems, adhesion energies between substrates and films that hardly absorb hydrogen can be measured by the controlled buckling technique, when the films of interest are coated with hydrogen absorbing films (active layer). The measurements are performed easily and can be repeated under the same test conditions, while variables such as the thickness of the coating materials or the boundary surface structure can be varied and optimized. In this work the adhesion energies of different materials on polycarbonate and niobium on sapphire are investigated. (orig.)

  18. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  19. Pulse electrodeposition of Prussian Blue thin films

    International Nuclear Information System (INIS)

    Najafisayar, P.; Bahrololoom, M.E.

    2013-01-01

    The effects of pulse electrodeposition parameters like peak current density and frequency on the electrochemical properties of Prussian Blue thin films were investigated. Electrochemical Impedance Spectroscopy, Cyclic Voltammetry and Chronoamperometry tests were carried out on Prussian Blue thin films which were pulse electrodeposited on Indium Tin Oxide coated glass substrates. The results showed that increase in the peak current densities and using higher pulsating frequencies during electrodeposition decreases the charge transfer resistance of the thin films while the diffusion coefficient of electroactive species in the films is increased as a consequence of using the same pulsating parameters. In addition, pulse electrodeposition technique does not alter deposition mechanism and morphology of the Prussian Blue thin films. - Highlights: • Prussian Blue thin films were pulse electrodeposited onto the ITO coated glass. • Pulse current condition affected thin films' electrochemical properties. • High pulsating current and frequency lower thin films' charge transfer resistance. • High pulsating current and frequency increase diffusion coefficient in thin films

  20. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  1. Reversible Surface Properties of Polybenzoxazine/Silica Nanocomposites Thin Films

    Directory of Open Access Journals (Sweden)

    Wei-Chen Su

    2013-01-01

    Full Text Available We report the reversible surface properties (hydrophilicity, hydrophobicity of a polybenzoxazine (PBZ thin film through simple application of alternating UV illumination and thermal treatment. The fraction of intermolecularly hydrogen bonded O–H⋯O=C units in the PBZ film increased after UV exposure, inducing a hydrophilic surface; the surface recovered its hydrophobicity after heating, due to greater O–H⋯N intramolecular hydrogen bonding. Taking advantage of these phenomena, we prepared a PBZ/silica nanocomposite coating through two simple steps; this material exhibited reversible transitions from superhydrophobicity to superhydrophilicity upon sequential UV irradiation and thermal treatment.

  2. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  3. Permalloy Thin-film Magnetic Sensors

    NARCIS (Netherlands)

    Groenland, J.P.J.; Eijkel, C.J.M.; Fluitman, J.H.J.; de Ridder, R.M.

    1992-01-01

    An introduction to the theory of the anisotropic magnetoresistance effect in ferromagnetic thin films is given, ending in a treatment of the minimalization of the free energy which is the result of the intrinsic and extrinsic anisotropies of the thin-film structure. The anisotropic magnetoresistance

  4. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposi- tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous me-.

  5. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 29; Issue 2. Characterization of nanocrystalline ... Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, ...

  6. Modification of rubber surface with DLC thin films for low friction and self lubrication

    NARCIS (Netherlands)

    Bui, X. L.; Pei, Y. T.; Mulder, E. D. G.; De Hosson, J. Th. M.; DeHosson, JTM; Brebbia, CA

    2009-01-01

    Thin films of hydrogenated diamond-like carbon (DLC) have been deposited on hydrogenated nitrile butadiene rubber (HNBR) via magnetron-enhanced plasma chemical vapor deposition (ME-PCVD). Pre-deposition plasma treatment of HNBR substrate is proven to be crucial for the improvement of film

  7. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  8. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  9. Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Administrator

    Nanocrystalline Pt-doped TiO2 thin films prepared by spray pyrolysis for hydrogen gas detection. LALCHAND A PATIL* .... tions of nanocrystalline TiO2 thin films using spray pyro- lysis. 2.4 Thickness and roughness determination of ... Electrical and gas sensing properties were measured using a static gas sensing system.

  10. Micromechanics of substrate-supported thin films

    Science.gov (United States)

    He, Wei; Han, Meidong; Wang, Shibin; Li, Lin-An; Xue, Xiuli

    2017-09-01

    The mechanical properties of metallic thin films deposited on a substrate play a crucial role in the performance of micro/nano-electromechanical systems (MEMS/NEMS) and flexible electronics. This article reviews ongoing study on the mechanics of substrate-supported thin films, with emphasis on the experimental characterization techniques, such as the rule of mixture and X-ray tensile testing. In particular, the determination of interfacial adhesion energy, film deformation, elastic properties and Bauschinger effect are discussed.

  11. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  12. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  13. Method of producing thin cellulose nitrate film

    International Nuclear Information System (INIS)

    Lupica, S.B.

    1975-01-01

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent

  14. Gettering of carbon dioxide by erbium thin films

    International Nuclear Information System (INIS)

    Mehrhoff, T.K.

    1980-01-01

    The interaction of carbon dioxide and erbium thin films is characterized for temperatures in the region of 300 to 900 0 C and partial pressure of carbon dioxide near 5 x 10 -7 Torr. Dynamic film pumping speeds were measured against a mercury diffusion pump of known pumping speed and conductance. A quadrupole mass spectrometer was used to monitor the carbon dioxide flow which originated from a calibrated leak in the 10 -6 standard cm 3 /s range. Data reduction was via a dedicated minicomputer with associated printer/plotter. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C. The reaction was preceded by the desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface

  15. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  16. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability of the dev......The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... predicts optical losses based on structure of the gold films....

  17. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  18. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c...... or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate...

  19. Macro stress mapping on thin film buckling

    International Nuclear Information System (INIS)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-01-01

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling

  20. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  1. The kinetics of Cr layer coated on TiNi films for hydrogen absorption

    Indian Academy of Sciences (India)

    The nickel titanium alloy. Ti2Ni and TiNi have been used by [1–3] as electrode materials for reversible hy- drogen electrode in nickel hydrogen system. The reversible hydrogen electrodes of this type have been .... The resistance of thin films increases on exposure to hydrogen in vacuum chamber as reported by Adachi et al ...

  2. Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

    International Nuclear Information System (INIS)

    Srivastava, Subodh; Sharma, Preetam; Singh, M.; Vijay, Y. K.; Sharma, S. S.; Sharma, Vinay; Rajura, Rajveer Singh

    2014-01-01

    In the present work we have reported the effect of temperature on the gas sensing properties of TiO 2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO 2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO 2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement

  3. High density nonmagnetic cobalt in thin films

    OpenAIRE

    Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Dev, B. N.

    2017-01-01

    Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition chamber and exposed to air. Thin HD NM cobalt layers were found near the cobalt/silicon and the cobalt-oxide/cobalt interfaces, while the thicker mid-depth region of the film was hcp cobalt with normal density and normal magnetic moment. If an ultr...

  4. Performance Characterization of Monolithic Thin Film Resistors

    Science.gov (United States)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  5. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  6. Thin film production method and apparatus

    Science.gov (United States)

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  7. Highly stretchable wrinkled gold thin film wires.

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  8. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  9. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  10. Thin-film silicon detectors for particle detection

    OpenAIRE

    Wyrsch, Nicolas; Dunand, S.; Miazza, C.; Shah, A.; Anelli, G.; Despeisse, M.; Garrigos, A.; Jarron, P.; Kaplon. J.; Moraes, D.; Commichau, S. C.; Dissertori, G.; Viertel, G. M.

    2008-01-01

    Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been char...

  11. Laser applications in thin-film photovoltaics

    Science.gov (United States)

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2010-08-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH4), silane radicals (SiH3, SiH2, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

  12. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    Wintec

    variety of tungstate materials, such as thick-film manga- nese tungstate, have been applied as humidity sensors. (Qu and Mayer 1997). The humidity sensing characteristics of bulk metal oxide–tungsten oxide systems have also been studied in the literature (Ichinose 1993). Thin films of tungsten oxide have been prepared ...

  13. A thin film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, C.J.M.; Wieberdink, Johan W.; Fluitman, J.H.J.; Popma, T.J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  14. Measurements of acoustic properties for thin films

    International Nuclear Information System (INIS)

    Kushibiki, J.; Maehara, H.; Chubachi, N.

    1982-01-01

    A measurement method for determining thin-film acoustic properties, such as characteristic acoustic impedance, sound velocity, density, and stiffness constant, is developed with a simple measurement principle and high measurement accuracy. The acoustic properties are determined from a maximum reflection loss and a center frequency obtained through a frequency response of the reflection loss for an acoustic transmission line composed of a sapphire/film/water system by using the acoustic pulse mode measurement system in the UHF range. The determination of the acoustic properties is demonstrated for sputtered fused quartz film, low-expansion borosilicate glass films, and chalcogenide glass films of evaporated As 2 S 3 and As 2 Se 3 , within the measurement accuracy around 1--2%. It is also found that the acoustic properties of thin films are generally different from those of bulk materials, depending on the fabrication techniques and conditions

  15. Large grain gallium arsenide thin films

    Science.gov (United States)

    Chu, S. S.; Chu, T. L.; Firouzi, H.; Han, Y. X.; Chen, W. J.; Wang, Q. H.

    Polycrystalline gallium arsenide films deposited on tungsten/graphite substrates have been used for the fabrication of thin film solar cells. Gallium arsenide films deposited on foreign substrates of 10 microns or less thickness exhibit, in most cases, pronounced shunting effects due to grain boundaries. MOS solar cells of 9 sq cm area with an AM1 efficiency of 8.5 percent and p(+)/n/n(+) homojunction solar cells of 1 sq cm area with an AM1 efficiency of 8.8 percent have been prepared. However, in order to further improve the conversion efficiency before the development of effective passivation techniques, gallium arsenide films with large and uniform grain structure are necessary. The large grain gallium arsenide films have been prepared by using (1) the arsine treatment of a thin layer of molten gallium on the substrate surface and (2) the recrystallized germanium films on tungsten/graphite as substrates.

  16. Investigation of defects in highly photosensitive germanosilicate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Simmons-Potter, K.; Potter, B.G. Jr.; Warren, W.L.

    1997-02-01

    Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen-deficient germanium point defects in the glass structure. Based on this correlation, highly photosensitive thin films have been engineered which demonstrate the largest reported ultraviolet-induced refractive index perturbations (An) in an as-synthesized material. Our thin-film fabrication process avoids the use of hydrogen sensitizing treatments and, thus, yields stable films which retain their predisposition for large photosensitivity for over one year of storage. Understanding the nature of the defects in such films and their relationship to charge trapping and enhanced photosensitivity is of paramount importance in designing and optimizing the materials. Toward this end, our films have been studied using electron paramagnetic resonance (EPR), capacitance-voltage, and optical bleaching and absorption spectroscopies. We find experimental evidence suggesting a model in which a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds form either diamagnetic positively or negatively charged Ge sites which are largely responsible for the charge trapping and photosensitivity in these thin films. We present experimental data and theoretical modeling to support our defect model and to show the relevance of the work.

  17. Electrochemical fabrication of nanoporous polypyrrole thin films

    International Nuclear Information System (INIS)

    Li Mei; Yuan Jinying; Shi Gaoquan

    2008-01-01

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. σ rt ∼ 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90 o /s at a driving potential of 0.8 V (vs. Ag/AgCl)

  18. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  19. Polymer surfaces, interfaces and thin films

    International Nuclear Information System (INIS)

    Stamm, M.

    1996-01-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  20. Restructuring in block copolymer thin films

    DEFF Research Database (Denmark)

    Posselt, Dorthe; Zhang, Jianqi; Smilgies, Detlef-M.

    2017-01-01

    Block copolymer (BCP) thin films have been proposed for a number of nanotechnology applications, such as nanolithography and as nanotemplates, nanoporous membranes and sensors. Solvent vapor annealing (SVA) has emerged as a powerful technique for manipulating and controlling the structure of BCP...... thin films, e.g., by healing defects, by altering the orientation of the microdomains and by changing the morphology. Due to high time resolution and compatibility with SVA environments, grazing-incidence small-angle X-ray scattering (GISAXS) is an indispensable technique for studying the SVA process......, providing information of the BCP thin film structure both laterally and along the film normal. Especially, state-of-the-art combined GISAXS/SVA setups at synchrotron sources have facilitated in situ and real-time studies of the SVA process with a time resolution of a few seconds, giving important insight...

  1. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  2. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  3. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  4. Dynamics of Polymer Thin Film Mixtures

    Science.gov (United States)

    Besancon, Brian M.; Green, Peter F.; Soles, Christopher L.

    2006-03-01

    We examined the influence of film thickness and composition on the glass transition temperature (Tg) and mean square atomic displacements (MSD) of thin film mixtures of deuterated polystyrene (dPS) and tetramethyl bisphenol-A polycarbonate (TMPC) on Si/SiOx substrates using incoherent elastic neutron scattering (ICNS). The onset of dissipative motions, such as those associated with the glass transition and sub-Tg relaxations, are manifested as ``kinks'' in the curve of elastic intensity (or MSD) versus temperature. From the relevant kinks, the Tg was determined as a function of composition and of film thickness. The dependence of the Tg on film thickness exhibited qualitatively similar trends, at a given composition, as determined by the ICNS and ellipsometry measurements. However, with increasing PS content, the values of Tg measured by INS were consistently larger then those measured by ellipsometry. These results are examined in light of existing models on the thin film glass transition and component blend dynamics.

  5. Elemental distribution in fluorinated amorphous carbon thin films.

    Science.gov (United States)

    Lamperti, A; Bottani, C E; Ossi, P M

    2005-01-01

    Focused ion beam-secondary ion mass spectrometry (FIB-SIMS) with 20 nm spatial resolution has been used to analyze amorphous fluorinated carbon thin films, deposited by plasma assisted chemical vapor deposition (PACVD), at micro- to nano-scale. Mass spectra and ion imaging of film surface were acquired and the presence and distribution of contaminants were investigated. Surface images show the secondary ion distribution for F(-), CH(-), CF(-). A change in size and topology of fluorine-rich areas is correlated with film hardness and with microstructure transition from diamond-like to polymer-like, as indicated by infrared and Raman spectroscopies. Based on the surface distributions of CF(-) and CH(-) and on the vibrational spectroscopy results, a mechanism of fluorine substitution for hydrogen and an attempt to explain the film structure and microstructure is proposed.

  6. Thin Water Films at Multifaceted Hematite Particle Surfaces.

    Science.gov (United States)

    Boily, Jean-François; Yeşilbaş, Merve; Uddin, Munshi Md Musleh; Baiqing, Lu; Trushkina, Yulia; Salazar-Alvarez, Germàn

    2015-12-08

    Mineral surfaces exposed to moist air stabilize nanometer- to micrometer-thick water films. This study resolves the nature of thin water film formation at multifaceted hematite (α-Fe2O3) nanoparticle surfaces with crystallographic faces resolved by selected area electron diffraction. Dynamic vapor adsorption (DVA) in the 0-19 Torr range at 298 K showed that these particles stabilize water films consisting of up to 4-5 monolayers. Modeling of these data predicts water loadings in terms of an "adsorption regime" (up to 16 H2O/nm(2)) involving direct water binding to hematite surface sites, and of a "condensation regime" (up to 34 H2O/nm(2)) involving water binding to hematite-bound water nanoclusters. Vibration spectroscopy identified the predominant hematite surface hydroxo groups (-OH, μ-OH, μ3-OH) through which first layer water molecules formed hydrogen bonds, as well as surface iron sites directly coordinating water molecules (i.e., as geminal η-(OH2)2 sites). Chemometric analyses of the vibration spectra also revealed a strong correspondence in the response of hematite surface hydroxo groups to DVA-derived water loadings. These findings point to a near-saturation of the hydrogen-bonding environment of surface hydroxo groups at a partial water vapor pressure of ∼8 Torr (∼40% relative humidity). Classical molecular dynamics (MD) resolved the interfacial water structures and hydrogen bonding populations at five representative crystallographic faces expressed in these nanoparticles. Simulations of single oriented slabs underscored the individual roles of all (hydro)oxo groups in donating and accepting hydrogen bonds with first layer water in the "adsorption regime". These analyses pointed to the preponderance of hydrogen bond-donating -OH groups in the stabilization of thin water films. Contributions of μ-OH and μ3-OH groups are secondary, yet remain essential in the stabilization of thin water films. MD simulations also helped resolve crystallographic

  7. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

  8. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  9. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  10. Thermal conductivity of dielectric thin films

    International Nuclear Information System (INIS)

    Lambropoulos, J.C.; Jolly, M.R.; Amaden, C.A.; Gilman, S.E.; Sinicropi, M.J.; Diakomihalis, D.; Jacobs, S.D.

    1989-05-01

    A direct reading thermal comparator has been used to measure the thermal conductivity of dielectric thin film coatings. In the past, the thermal comparator has been used extensively to measure the thermal conductivity of bulk solids, liquids, and gases. The technique has been extended to thin film materials by making experimental improvements and by the application of an analytical heat flow model. Our technique also allows an estimation of the thermal resistance of the film/substrate interface which is shown to depend on the method of film deposition. The thermal conductivity of most thin films was found to be several orders of magnitude lower than that of the material in bulk form. This difference is attributed to structural disorder of materials deposited in thin film form. The experimentation to date has centered primarily on optical coating materials. These coatings, used to enhance the optical properties of components such as lenses and mirrors, are damaged by thermal loads applied in high-power laser applications. It has been widely postulated that there may be a correlation between the thermal conductivity and the damage threshold of these materials. 31 refs., 11 figs., 8 tabs

  11. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  12. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  13. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  14. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  15. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  16. Capillary stress in microporous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samuel, J.; Hurd, A.J.; Frink, L.J.D.; Swol, F. van [Sandia National Labs., Albuquerque, NM (United States); Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States). Ceramic Processing Science Dept.]|[Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineering Ceramics; Raman, N.K. [Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro Engineered Ceramics

    1996-06-01

    Development of capillary stress in porous xerogels, although ubiquitous, has not been systematically studied. The authors have used the beam bending technique to measure stress isotherms of microporous thin films prepared by a sol-gel route. The thin films were prepared on deformable silicon substrates which were then placed in a vacuum system. The automated measurement was carried out by monitoring the deflection of a laser reflected off the substrate while changing the overlying relative pressure of various solvents. The magnitude of the macroscopic bending stress was found to reach a value of 180 MPa at a relative pressure of methanol, P/Po = 0.001. The observed stress is determined by the pore size distribution and is an order of magnitude smaller in mesoporous thin films. Density Functional Theory (DFT) indicates that for the microporous materials, the stress at saturation is compressive and drops as the relative pressure is reduced.

  17. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  18. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    International Nuclear Information System (INIS)

    Dersch, H.; Amer, N.M.

    1984-01-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

  19. Structural, optical, and electrical properties of MgyTi1-yHx thin films

    NARCIS (Netherlands)

    Borsa, D. M.; Gremaud, R.; Baldi, A.; Schreuders, H.; Rector, J. H.; Kooi, B.; Vermeulen, P.; Notten, P.H.L.; Dam, B.; Griessen, R.

    The structural, optical, and electrical transformations induced by hydrogen absorption and/or desorption in Mg-Ti thin films prepared by co-sputtering of Mg and Ti are investigated. Highly reflective in the metallic state, the films become highly absorbing upon H absorption. The

  20. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  1. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  2. A generalized theory of thin film growth

    Science.gov (United States)

    Du, Feng; Huang, Hanchen

    2018-03-01

    This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

  3. Protein-modified nanocrystalline diamond thin films for biosensor applications.

    Science.gov (United States)

    Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A; Hernando, Jorge; Catharino, Silvia C R; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

    2004-10-01

    Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

  4. Lattice Mismatch in Crystalline Nanoparticle Thin Films.

    Science.gov (United States)

    Gabrys, Paul A; Seo, Soyoung E; Wang, Mary X; Oh, EunBi; Macfarlane, Robert J; Mirkin, Chad A

    2018-01-10

    For atomic thin films, lattice mismatch during heteroepitaxy leads to an accumulation of strain energy, generally causing the films to irreversibly deform and generate defects. In contrast, more elastically malleable building blocks should be better able to accommodate this mismatch and the resulting strain. Herein, that hypothesis is tested by utilizing DNA-modified nanoparticles as "soft," programmable atom equivalents to grow a heteroepitaxial colloidal thin film. Calculations of interaction potentials, small-angle X-ray scattering data, and electron microscopy images show that the oligomer corona surrounding a particle core can deform and rearrange to store elastic strain up to ±7.7% lattice mismatch, substantially exceeding the ±1% mismatch tolerated by atomic thin films. Importantly, these DNA-coated particles dissipate strain both elastically through a gradual and coherent relaxation/broadening of the mismatched lattice parameter and plastically (irreversibly) through the formation of dislocations or vacancies. These data also suggest that the DNA cannot be extended as readily as compressed, and thus the thin films exhibit distinctly different relaxation behavior in the positive and negative lattice mismatch regimes. These observations provide a more general understanding of how utilizing rigid building blocks coated with soft compressible polymeric materials can be used to control nano- and microstructure.

  5. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  6. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  7. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  8. Mesoscale simulations of confined Nafion thin films

    Science.gov (United States)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  9. Magnetocaloric effect of thin Terbium films

    Science.gov (United States)

    Mello, V. D.; Anselmo, D. H. A. L.; Vasconcelos, M. S.; Almeida, N. S.

    2017-12-01

    We report a theoretical study of the magnetocaloric effect of Terbium (Tb) thin films due to finite size and surface effects in the helimagnetic phase, corresponding to a temperature range from TC=219 K to TN=231 K, for external fields of the order of kOe. For a Tb thin film of 6 monolayers submitted to an applied field (ΔH =30 kOe, ΔH =50 kOe and ΔH = 70 kOe) we report a significative change in adiabatic temperature, ΔT / ΔH , near the Néel temperature, of the order ten times higher than that observed for Tb bulk. On the other hand, for small values of the magnetic field, large thickness effects are found. For external field strength around few kOe, we have found that the thermal caloric efficiency increases remarkably for ultrathin films. For an ultrathin film with 6 monolayers, we have found ΔT / ΔH = 43 K/T while for thicker films, with 20 monolayers, ΔT / ΔH = 22 K/T. Our results suggest that thin films of Tb are a promising material for magnetocaloric effect devices for applications at intermediate temperatures.

  10. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  11. Optical characterization of niobium pentoxide thin films

    International Nuclear Information System (INIS)

    Pawlicka, A.

    1996-01-01

    Thin films of Nb 2 O 5 were obtained by sol-gel method using ultrasonic irradiation and deposited by dip-coating technique. After calcination at temperatures superior than 500 deg C these films (300 nm thick) were characterized by cyclic voltametry and cronoamperometry. The memory measurements, color efficiency, optical density as a function of wave number and applied potential were effectuated to determine their electrochromic properties. The study of electrochromic properties of these films shows that the insertion process of lithium is reversible and changes their coloration from transparent (T=80%) to dark blue (T=20%). (author)

  12. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, P. [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Becker, H.-W. [RUBION, Ruhr-University Bochum (Germany); Williams, G.V.M. [The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand); Hübner, R.; Heinig, K.-H. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany); Markwitz, A., E-mail: a.markwitz@gns.cri.nz [National Isotope Centre, GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington (New Zealand)

    2017-03-01

    Highlights: • This paper reports for the first time redistribution of hydrogen atoms in diamond like carbon thin films during ion implantation of low energy magnetic ions. • The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. • Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. - Abstract: Hydrogenated diamond-like carbon films produced by C{sub 3}H{sub 6} deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of ∼35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications.

  14. Boron-doped nanocrystalline silicon thin films for solar cells

    International Nuclear Information System (INIS)

    Fathi, E.; Vygranenko, Y.; Vieira, M.; Sazonov, A.

    2011-01-01

    This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 deg. C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si:H were obtained from transmission and reflection spectra. By employing p + nc-Si:H as a window layer combined with a p' a-SiC buffer layer, a-Si:H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements.

  15. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  16. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  17. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and

  18. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  19. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...

  20. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic

  1. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  2. Polyaniline. Thin films and colloidal dispersions

    Czech Academy of Sciences Publication Activity Database

    Stejskal, Jaroslav; Sapurina, I.

    2005-01-01

    Roč. 77, č. 5 (2005), s. 815-826 ISSN 0033-4545 R&D Projects: GA MŠk ME 539; GA AV ČR IAA4050313 Grant - others:IUPAC project 2002-019-1-400 Keywords : polyaniline * thin films * dispersions Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.679, year: 2005

  3. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  4. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  5. Flexoelectricity in barium strontium titanate thin film

    International Nuclear Information System (INIS)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-01-01

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba 0.7 Sr 0.3 TiO 3 thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  6. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  7. Functional planar thin film optical waveguide lasers

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav

    2012-01-01

    Roč. 9, č. 2 (2012), 91-99 ISSN 1612-2011 R&D Projects: GA ČR(CZ) GAP106/10/1477 Institutional research plan: CEZ:AV0Z10100522 Keywords : waveguide laser * planar waveguides * thin films * pulsed laser deposition * optical waveguides * laser materials Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.714, year: 2012

  8. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  9. Gravitationally driven drainage of thin films

    Science.gov (United States)

    Naire, Shailesh

    In this thesis we develop theory for an experiment done by Snow and coworkers at Dow Corning that involves a vertically-oriented, thinned polyurethane film with silicone surfactant, draining under gravity. We present the mathematical formulation for a 1+1- and 2+1-dimensional model to study the evolution of a vertically-oriented thin liquid film draining under gravity when there is an insoluble surfactant with finite surface viscosity on its free surface. This formulation has all the ingredients that include: surface tension, gravity, surface viscosity, the Marangoni effect, convective and diffusive surfactant transport; essential to describe the behavior of a vertical draining film with surfactant. We study a hierarchy of mathematical models with increasing complexity starting with the flat film model where gravity balances viscous shear and surface tension is neglected, this is generalized to include surface tension. We further generalize to incorporate variable surface viscosity and more complicated constitutive laws for surface tension as a function of surfactant concentration. Lubrication theory is employed to derive three coupled nonlinear partial differential equations (PDEs) describing the free surface shape, a component of surface velocity and the surfactant transport at leading order. A large surface viscosity limit recovers the tangentially-immobile model; for small surface viscosity, the film is mobile. Transition from a mobile to an immobile film is observed for intermediate values of surface viscosity and Marangoni number. The above models reproduce a number of features observed in experiments, these include film shapes and thinning rates which can be correlated to experiment. The 2+1-dimensional model for simplified surface properties has also been studied. Numerical experiments were performed to understand the stability of the system to perturbations across the film. An instability was seen in the mobile case; this was caused by a competition

  10. The kinetics of Cr layer coated on TiNi films for hydrogen absorption

    Indian Academy of Sciences (India)

    The effect of hydrogen absorption on electrical resistance with temperature for TiNi and TiNi–Cr thin films was investigated. The TiNi thin films of thickness 800 Å were deposited at different angles ( = 0°, 30°, 45°, 60° and 75°) under 10−5 Torr pressure by thermal evaporation on the glass substrate at room temperature.

  11. Thin film preparation of semiconducting iron pyrite

    Science.gov (United States)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  12. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  13. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  14. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed. Keywords. Alkali metal; thin films; magnetism; density functional ...

  15. Optical and electrical properties of nickel xanthate thin films

    Indian Academy of Sciences (India)

    Keywords. Nickel xanthate thin film; organometallic thin film; chemical bath deposition. Abstract. Nickel xanthate thin films (NXTF) were successfully deposited by chemical bath deposition, on to amorphous glass substrates, as well as on - and -silicon, indium tin oxide and poly(methyl methacrylate). The structure of the ...

  16. Electrochemical fabrication of nanoporous polypyrrole thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li Mei [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China); Yuan Jinying [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: yuanjy@mail.tsinghua.edu.cn; Shi Gaoquan [Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing, 100084 (China)], E-mail: gshi@mail.tsinghua.edu.cn

    2008-04-30

    Polypyrrole thin films with pores in nanometer scale were synthesized by direct electrochemical oxidation of pyrrole in a mixed electrolyte of isopropyl alcohol, boron trifluoride diethyl etherate, sodium dodecylsulfonate and poly(ethylene glycol) using well-aligned ZnO nanowires arrays as templates. The thin films exhibit high conductivity of ca. {sigma}{sub rt} {approx} 20.5 s/cm and can be driven to bend during redox processes in 1.0 M lithium perchlorate aqueous solution. The movement rate of an actuator based on this nanoporous film was measured to be over 90{sup o}/s at a driving potential of 0.8 V (vs. Ag/AgCl)

  17. Laser controlled magnetism in hydrogenated fullerene films

    International Nuclear Information System (INIS)

    Makarova, Tatiana L.; Shelankov, Andrei L.; Kvyatkovskii, Oleg E.; Zakharova, Irina B.; Buga, Sergei G.; Volkov, Aleksandr P.

    2011-01-01

    Room temperature ferromagnetic-like behavior in fullerene photopolymerized films treated with monatomic hydrogen is reported. The hydrogen treatment controllably varies the paramagnetic spin concentration and laser induced polymerization transforms the paramagnetic phase to a ferromagnetic-like one. Excess laser irradiation destroys magnetic ordering, presumably due to structural changes, which was continuously monitored by Raman spectroscopy. We suggest an interpretation of the data based on first-principles density-functional spin-unrestricted calculations which show that the excess spin from mono-atomic hydrogen is delocalized within the host fullerene and the laser-induced polymerization promotes spin exchange interaction and spin alignment in the polymerized phase.

  18. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  19. Thin films deposited by laser ablation for the measurement of the ionizing and non-ionizing radiation

    International Nuclear Information System (INIS)

    Villarreal B, J.E.; Escobar A, L.; Camps, E.; Romero, S.; Gonzalez, P.; Salinas, B.

    2001-01-01

    In this work the obtained results to synthesize thin films of amorphous carbon with incorporated nitrogen and hydrogen are presented, as well as thin films of aluminium oxide using the laser ablation technique. The thin films were exposed to ionizing radiation (gamma rays of a 60 Co source, beta radiation of a 90 Sr source) and a non-ionizing radiation (UV radiation). The obtained results show that it is possible to obtain materials in thin film form with thickness of hundreds of nanometers, which present thermoluminescent response when being irradiated with ionizing radiation and non-ionizing radiation. (Author)

  20. Effects of oxygen partial pressure on structural and gasochromic properties of sputtered VOx thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Wei-Luen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Lu, Yang-Ming [Department of Electrical Engineering, National University of Tainan, Tainan 70005, Taiwan (China); Lu, Ying-Rui [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Program for Science and Technology of Accelerator Light Source, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Chi-Liang [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Dong, Chung-Li, E-mail: dong.cl@nsrrc.org.tw [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Jeng-Lung; Chan, Ting-Shan; Lee, Jyh-Fu; Pao, Chih-Wen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2013-10-01

    VOx films were deposited by radio-frequency reactive magnetron sputtering from a vanadium target in an Ar–O{sub 2} gas mixture and pure O{sub 2}. For the films deposited in the gas mixture, the Ar flow rate was controlled at 20 sccm and the oxygen flow rate was controlled at 1, 3, and 5 sccm, respectively. A thin (∼ 5 nm) Pt layer was deposited on the VOx thin films as a hydrogen catalyst. The long-range structural order, short-range atom arrangement, and gasochromic properties of the deposited films were studied. The grazing incidence X-ray diffraction (GIXRD) results indicate that the deposited films are amorphous. Lamellar structures were found at oxygen flow rates of 3 sccm and above. The X-ray absorption spectroscopy (XAS) results show that the short-range atom arrangement of the lamellar VOx thin films is similar to that of crystal V{sub 2}O{sub 5}. The GIXRD and XAS results show that the film obtained with the gas mixture and at an oxygen flow rate of 1 sccm did not significantly change after exposure to hydrogen, whereas the other films exhibited decreased interlayer distance, oxidation state, and crystallinity. The color of the films changed from light or deep yellow to gray. The results suggest that the gasochromic properties of the VOx thin films are related to the V{sub 2}O{sub 5}-like atom arrangement and the interlayer distance of the lamellar structure. The films deposited with an oxygen flow rate of 3 sccm and above can be applied to H{sub 2} gas sensors. - Highlights: • Sputtered VOx film capped by Pt have potential for application in hydrogen sensor. • We present the X-ray absorption spectroscopy study of the gasochromic VOx films. • Correlation of gasochromism and electronic structure of VOx film were studied. • Correlation of gasochromism and atomic structure were investigated.

  1. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    Amorphous hydrogenated carbon films (-C:H) on -type (100) silicon wafers were prepared with a middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different ratios of methane–argon gases. The band characteristics, mechanical properties as well as refractive index were measured by ...

  2. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    †Key Laboratory of Radiation and Technology of Education Ministry of China, Institute of Nuclear Science and. Technology, Sichuan University, Chengdu 610064, P. R. China. MS received 14 March 2011; revised 29 October 2011. Abstract. Amorphous hydrogenated carbon films (a-C:H) on p-type (100) silicon wafers were ...

  3. Humidity resistant hydrogenated carbon nitride films

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Polčák, J.; Sobota, Jaroslav; Müllerová, Ilona; Peřina, Vratislav; Caha, O.

    2013-01-01

    Roč. 275, 15 June (2013), s. 7-13 ISSN 0169-4332 R&D Projects: GA MŠk ED0017/01/01 Institutional support: RVO:68081731 ; RVO:61389005 Keywords : thin films * corrosion behanior * delamination * stress Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BH - Optics, Masers, Lasers (UJF-V) Impact factor: 2.538, year: 2013

  4. Flexible magnetic thin films and devices

    Science.gov (United States)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  5. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  6. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  7. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  8. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  9. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  10. Structure of ion-plated amorphous hydrogenated carbon films investigated by electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Muehling, I.; Bewilogua, K.; Breuer, K. (Sektion Physik/Elektronische Bauelemente, Technische Univ., Karl-Marx-Stadt (German Democratic Republic))

    1990-05-15

    Thin ion-plated amorphous hydrogenated carbon films were investigated by electron energy loss spectroscopy. From an analysis of the dielectric function, information on the film structure could be obtained. The results will be compared with those of electron diffraction studies. Differences between insulating and conducting substrates could be verified in the film structure and are related to surface charging effects. From an analysis of the oscillator strength sum rule the content of C sp{sup 2} atoms was estimated. (orig.).

  11. Gettering of carbon dioxide by erbium thin films

    International Nuclear Information System (INIS)

    Mehrhoff, T.K.

    1980-01-01

    The interaction of carbon dioxide and erbium thin films is characterized at 300 to 900 0 C and 5 x 10 -7 torr. Temperature ramp experiments with thin erbium films indicated a significant reaction above 300 0 C, preceded by desorption of water vapor, hydrogen and nitrogen and/or carbon monoxide from the film surface. The sticking coefficients were plotted as a function of Langmuirs of carbon dioxide exposure. Between 400 and 600 0 C, the length of the exposure was found to be more important than the temperature of the exposure in determining the sticking coefficient. Some evolution of carbon monoxide was noted particularly in the 400 to 500 0 C region. An 80% conversion of carbon dioxide to carbon monoxide was measured at 500 0 C. The film pumping speeds were compared with published vapor pressure data for erbium. This comparison indicated that a significant portion of the pumping action observed at temperatures of 800 0 C and above was due to evaporation of erbium metal

  12. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  13. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  14. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  15. Activation of erbium films for hydrogen storage

    International Nuclear Information System (INIS)

    Brumbach, Michael T.; Ohlhausen, James A.; Zavadil, Kevin R.; Snow, Clark S.; Woicik, Joseph C.

    2011-01-01

    Hydriding of metals can be routinely performed at high temperature in a rich hydrogen atmosphere. Prior to the hydrogen loading process, a thermal activation procedure is required to promote facile hydrogen sorption into the metal. Despite the wide spread utilization of this activation procedure, little is known about the chemical and electronic changes that occur during activation and how this thermal pretreatment leads to increased rates of hydrogen uptake. This study utilized variable kinetic energy X-ray photoelectron spectroscopy to interrogate the changes during in situ thermal annealing of erbium films, with results confirmed by time-of-flight secondary ion mass spectrometry and low energy ion scattering. Activation can be identified by a large increase in photoemission between the valence band edge and the Fermi level and appears to occur over a two stage process. The first stage involves desorption of contaminants and recrystallization of the oxide, initially impeding hydrogen loading. Further heating overcomes the first stage and leads to degradation of the passive surface oxide leading to a bulk film more accessible for hydrogen loading.

  16. Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

    Czech Academy of Sciences Publication Activity Database

    Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

    2016-01-01

    Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin film s Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

  17. Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

    Czech Academy of Sciences Publication Activity Database

    Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

    2016-01-01

    Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

  18. Substrate heater for thin film deposition

    Science.gov (United States)

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  19. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  1. Thin film photovoltaic panel and method

    Science.gov (United States)

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  2. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  3. Thin films for gas sensors

    Science.gov (United States)

    Pires, Jose Miguel Alves Correia

    Nos ultimos anos tem-se assistido a um aumento dos investimentos na investigacao de novos materiais para aplicacao em sensores. Apesar de ja existir um bom numero de dispositivos explorados comercialmente, muitas vezes, quer devido aos elevados custos de producao, quer devido a uma crescente exigencia do ponto de vista das caracteristicas de funcionamento, continua a ser necessario procurar novos materiais ou novas formas de producao que permitam baixar os custos e melhorar o desempenho dos dispositivos. No campo dos sensores de gases tem-se verificado continuos avancos nos ultimos anos. Continua todavia a ser necessario conhecer melhor, tanto os processos de producao dos materiais, como os mecanismos que regulam a sensibilidade dos dispositivos aos gases, de modo a orientar adequadamente a investigacao dos novos materiais, nomeadamente no que se refere a optimizacao dos parâmetros que nao satisfazem ainda os requisitos do mercado. Um dos materiais que tem mostrado melhores qualidades para aplicacao em sensores de gases de tipo resistivo e o dioxido de estanho. Este material tem sido produzido sob diversas formas e usando diferentes tecnicas, como sejam: sol-gel [1], pulverizacao catodica (sputtering) por magnetrao [2-4], sinterizacao de pos [5, 6], ablacao laser [7] ou RGTO [8]. Os resultados obtidos revelam que as caracteristicas dos dispositivos sao muito dependentes das tecnicas usadas na sua producao. A deposicao usando sputtering reactivo por magnetrao e uma tecnica que permite obter filmes finos de oxido de estanho com diferentes caracteristicas, quer do ponto de vista da estrutura, quer da composicao, e por isso, tambem, com diferentes sensibilidades aos gases. No âmbito deste trabalho, foram produzidos filmes de SnO2 usando sputtering DC reactivo com diferentes condicoes de deposicao. Os substratos usados foram lâminas de vidro e o alvo foi estanho com 99.9% de pureza. Foi estudada a influencia da atmosfera de deposicao, da pressao parcial do O2, da

  4. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  5. Thin film interfaces for microelectrochemical sensors

    Science.gov (United States)

    Tvarozek, Vladimir; Ivanic, Rastislav; Jakubec, Andrej; Novotny, Ivan; Rehacek, Vlastimil

    2001-09-01

    Planar microelectrochemical chips with thin film electodes of different shapes and arrangement, have been developed and fabricated. Micro electrochemical cell with closely vertically spaced electrodes allows to exploit the effect of redox recycling and an increase of collection efficiency for a high current amplification. PC simulations of electro- mechanical properties of sl-BLM is useful tool for evaluation and prediction of BLM behavior. Non-symmetric microelectrode arrays were designed and fabricated for electrical monitoring of human skin.

  6. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  7. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, Jonathan; Elliott, James A.

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane-electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  8. Mesoscale simulations of confined Nafion thin films

    OpenAIRE

    Vanya, Peter; Sharman, J; Elliott, James Arthur

    2017-01-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains with carbon and quartz as confining materials for a wide range of operational water contents and...

  9. Optical characterization of thin solid films

    CERN Document Server

    Ohlídal, Miloslav

    2018-01-01

    This book is an up-to-date survey of the major optical characterization techniques for thin solid films. Emphasis is placed on practicability of the various approaches. Relevant fundamentals are briefly reviewed before demonstrating the application of these techniques to practically relevant research and development topics. The book is written by international top experts, all of whom are involved in industrial research and development projects.

  10. P-type CuxS thin films: Integration in a thin film transistor structure

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.

    2013-01-01

    Cu x S thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu 2 S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1–0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of Cu x S films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 °C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show Cu x S films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the Cu x S films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of Cu x S surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of Cu x S films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the Cu x S material. - Highlights: • Surface properties of annealed Cu x S films. • Variation of conductivity with annealing temperatures of Cu x S films. • Application of evaporated Cu x S films in a thin film transistor (TFT) structure. • Determination of Cu x S p-type characteristic from TFT behaviour

  11. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  12. Multiferroic RMnO3 thin films

    Science.gov (United States)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  13. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  14. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  15. Thermal properties of methyltrimethoxysilane aerogel thin films

    Directory of Open Access Journals (Sweden)

    Leandro N. Acquaroli

    2016-10-01

    Full Text Available Aerogels are light and porous solids whose properties, largely determined by their nanostructure, are useful in a wide range of applications, e.g., thermal insulation. In this work, as-deposited and thermally treated air-filled silica aerogel thin films synthesized using the sol-gel method were studied for their thermal properties using the 3-omega technique, at ambient conditions. The thermal conductivity and diffusivity were found to increase as the porosity of the aerogel decreased. Thermally treated films show a clear reduction in thermal conductivity compared with that of as-deposited films, likely due to an increase of porosity. The smallest thermal conductivity and diffusivity found for our aerogels were 0.019 W m−1 K−1 and 9.8 × 10-9 m2 s−1. A model was used to identify the components (solid, gaseous and radiative of the total thermal conductivity of the aerogel.

  16. Deposition and characterization of ZnSe nanocrystalline thin films

    Science.gov (United States)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  17. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  18. Photoelectrochemical (PEC) studies on CdSe thin films ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin–oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction.

  19. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  20. Dynamics of a spreading thin film with gravitational counterflow ...

    Indian Academy of Sciences (India)

    In the present work, dynamics of a thin film spreading due to a thermocapillary stress is mod- eled within lubrication approximation. In microscale flows, the large surface to volume ratios allow interfacial stresses to exert a driving influence. This ability to drive thin film using thermo- capillary stress is used to spread film for ...

  1. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

  2. Development of microforming process combined with thin film transfer printing

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming receives a lot of attentions in the recent years due to the increased use of microparts in electronics and medical sectors. For the further functionalization of these micro devices, high functional surface with noble metals are strongly required for the devices in bio- and medical fields, such as bio-sensors. To realize the submillimeter structure of metal foils and micro to nanometer structures in one forming process, the present study proposes a combined process of microforming for metal foils and transfer printing of gold (Au thin films. To clarify the availability of the proposed combined process, transferability of Au thin films under micro bulging deformation are investigated. 0.1 mm-thick pure titanium (Ti foils and 100 nm-thick Au films were used as blank and functional materials, respectively. The forming tests of the proposed process were conducted. With increasing strain of Ti foils, Au TP areas increase. By this experiment, it’s confirmed that the hydrogen reduction of oxidation layers and the strain of Ti foil are significant factor for Au TP on Ti foils.

  3. Sputtering of cryogenic films of hydrogen by keV ions

    DEFF Research Database (Denmark)

    Schou, Jørgen; Hilleret, Noel

    2009-01-01

    The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data...... at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer....

  4. Hydrogen content and density in nanocrystalline carbon films of a predominant diamond character

    International Nuclear Information System (INIS)

    Hoffman, A.; Heiman, A.; Akhvlediani, R.; Lakin, E.; Zolotoyabko, E.; Cyterman, C.

    2003-01-01

    Nanocrystalline carbon films possessing a prevailing diamond or graphite character, depending on substrate temperature, can be deposited from a methane hydrogen mixture by the direct current glow discharge plasma chemical vapor deposition method. While at a temperature of ∼880 deg. C, following the formation of a thin precursor graphitic film, diamond nucleation occurs and a nanodiamond film grows, at higher and lower deposition temperatures the films maintain their graphitic character. In this study the hydrogen content, density and nanocrystalline phase composition of films deposited at various temperatures are investigated. We aim to elucidate the role of hydrogen in nanocrystalline films with a predominant diamond character. Secondary ion mass spectroscopy revealed a considerable increase of the hydrogen concentration in the films that accompanies the growth of nanodiamond. It correlates with near edge x-ray adsorption spectroscopy measurements, that showed an appearance of spectroscopic features associated with the diamond structure, and with a substantial increase of the film density detected by x-ray reflectivity. Electron energy loss spectroscopy showed that nanocrystalline diamond films can be deposited from a CH 4 /H 2 mixture with hydrogen concentration in the 80%-95% range. For a deposition temperature of 880 deg. C, the highest diamond character of the films was found for a hydrogen concentration of 91% of H 2 . The deposition temperature plays an important role in diamond formation, strongly influencing the content of adsorbed hydrogen with an optimum at 880 deg. C. It is suggested that diamond nucleation and growth of the nanodiamond phase is driven by densification of the deposited graphitic films which results in high local compressive stresses. Nanodiamond formation is accompanied by an increase of hydrogen concentration in the films. It is suggested that hydrogen retention is critical for stabilization of nanodiamond crystallites. At lower

  5. Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1980-01-01

    The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

  6. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  7. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) ...

  8. Synthesis and characterization of NiPcTSTNa(L) thin films

    Indian Academy of Sciences (India)

    Campidelli S et al 2008 J. Am. Chem. Soc. 130 11503. Cody G D 1984 Hydrogenated amorphous silicon, Part B, Opti- cal properties, semiconductors and semimetals, J I Pankove (ed.),. (Orlando: Academic Press) Vol. 21. Collins R A, Krie A and Abass A K 1993 Thin Solid Films 229 113. Davidson A T 1992 J. Chem. Phys.

  9. Thin film limit correction method to the surface defective layer in low absorption spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Holovský, Jakub; Purkrt, Adam; Stuchlík, Jiří

    2015-01-01

    Roč. 7, č. 4 (2015), s. 343-346 ISSN 2164-6627 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LD14011 Institutional support: RVO:68378271 Keywords : thin films * optical properties * hydrogenated amorphous silicon * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the

  11. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposi- tion (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and ...

  12. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    Science.gov (United States)

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-06

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Solution processed pentacene thin films and their structural properties

    International Nuclear Information System (INIS)

    Tao Chunlan; Zhang Xuhui; Zhang Fujia; Liu Yiyang; Zhang Haoli

    2007-01-01

    The paper reported the solution process of pentacene thin films from organic solvent O-dichlorobenzene. The pentacene thin films obtained from different conditions were characterized by X-ray diffraction (XRD), optical microscopy, scanning electron microscopy (SEM), and UV-vis spectroscopy. The result shows that the pentacene solution was successfully obtained at a minimum temperature of 40 deg. C. The optimum temperature of forming pentacene thin films was 100 deg. C

  14. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  15. Review of the fundamentals of thin-film growth.

    Science.gov (United States)

    Kaiser, Norbert

    2002-06-01

    The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.

  16. Progress on thin-film sensors for space propulsion technology

    Science.gov (United States)

    Kim, Walter S.

    1987-01-01

    The objective is to develop thin-film thermocouples for Space Shuttle Main Engine (SSME) components. Thin-film thermocouples have been developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades to 1800 F. The technology established for aircraft gas turbine engines will be adapted to the materials and environment encountered in the SSME. Specific goals are to expand the existing in-house thin-film sensor technology and to test the survivability and durability of thin-film sensors in the SSME environment.

  17. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  18. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  19. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  20. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  1. Seebeck effect of some thin film carbides

    International Nuclear Information System (INIS)

    Beensh-Marchwicka, G.; Prociow, E.

    2002-01-01

    Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

  2. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  3. Thin Film Photovoltaics: Markets and Industry

    OpenAIRE

    Jäger-Waldau, Arnulf

    2012-01-01

    Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for s...

  4. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  5. Thin molecular films of supramolecular porphyrins

    Directory of Open Access Journals (Sweden)

    KOITI ARAKI

    2000-03-01

    Full Text Available A relevant series of symmetric supramolecular porphyrins has been obtained by attaching four [Ru II(bipy2Cl] groups to the pyridyl substituents of meso-tetra(4-pyridylporphyrin and its metallated derivatives. These compounds display a rich electrochemistry and versatile catalytic, electrocatalytic and photochemical properties, associated with the ruthenium-bipyridine and the porphyrin complexes. These properties can be transferred to the electrodes by attaching thin molecular films of the compounds, by dip-coating, electrostatic assembly or electropolymerization. In this way, the interesting properties of those supermolecules and supramolecular assemblies can be used to prepare molecular devices and sensors.

  6. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  7. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  8. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137 ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  9. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial orientational order; thin film; second harmonic gen- eration; silver nanoparticle; polyvinyl alcohol; free-standing film; optical limiter.

  10. Methods for producing thin film charge selective transport layers

    Science.gov (United States)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  11. Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films

    International Nuclear Information System (INIS)

    Guivarc'h, A.; Le Contellec, M.; Richard, J.; Ligeon, E.; Fontenille, J.; Danielou, R.

    1980-01-01

    The 1 H( 11 B, α)αα nuclear reaction is used to determine the H content and the density of amorphous semiconductor Si 1 -sub(x)Csub(x)H 2 and SiHsub(z) thin films. Rutherford backscattering is used to determine the x values and infrared transmission to study the hydrogen bonds. We have observed a transfer or/and a release of hydrogen under bombardment by various ions and we show that this last effect must be taken into account for a correct determination of the hydrogen content. An attempt is made to correlate the hydrogen release with electronic and nuclear energy losses. (orig.)

  12. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  13. Dealloyed Ruthenium Film Catalysts for Hydrogen Generation from Chemical Hydrides

    Directory of Open Access Journals (Sweden)

    Ramis B. Serin

    2017-07-01

    Full Text Available Thin-film ruthenium (Ru and copper (Cu binary alloys have been prepared on a Teflon™ backing layer by cosputtering of the precious and nonprecious metals, respectively. Alloys were then selectively dealloyed by sulfuric acid as an etchant, and their hydrogen generation catalysts performances were evaluated. Sputtering time and power of Cu atoms have been varied in order to tailor the hydrogen generation performances. Similarly, dealloying time and the sulfuric acid concentration have also been altered to tune the morphologies of the resulted films. A maximum hydrogen generation rate of 35 mL min−1 was achieved when Cu sputtering power and time were 200 W and 60 min and while acid concentration and dealloying time were 18 M and 90 min, respectively. It has also been demonstrated that the Ru content in the alloy after dealloying gradually increased with the increasing the sputtering power of Cu. After 90 min dealloying, the Ru to Cu ratio increased to about 190 times that of bare alloy. This is the key issue for observing higher catalytic activity. Interestingly, we have also presented template-free nanoforest-like structure formation within the context of one-step alloying and dealloying used in this study. Last but not least, the long-time hydrogen generation performances of the catalysts system have also been evaluated along 3600 min. During the first 600 min, the catalytic activity was quite stable, while about 24% of the catalytic activity decayed after 3000 min, which still makes these systems available for the development of robust catalyst systems in the area of hydrogen generation.

  14. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  15. Possible correlation effects of surface state electrons on a solid hydrogen film

    NARCIS (Netherlands)

    Mugele, Friedrich Gunther; Albrecht, Uwe; Leiderer, Paul; Kono, Kimitoshi

    1992-01-01

    We have investigated the transport properties of surface state electrons on thin quench-condensed hydrogen films for various electron densities. The surface state electron mobility showed a continuous dependence on the plasma parameter Gamma in the range from 20 to 130, indicating a strong influence

  16. Optical properties of amorphous hydrogenated carbon films

    Science.gov (United States)

    Chen, Jing Qiu

    Carbon can be formed either as fully crystalline structures, such as diamond, graphite, and fullerene (C60). or as mostly amorphous structures, like amorphous hydrogenated carbon (a-C:H). A study was made of a-C:H films which had been deposited by plasma enhanced chemical vapor deposition (PECVD) using CH4, H2 and Ar (or N2 for doping) gas mixtures. Each film exhibits unique physical, optical and electronic properties dependent upon the specific deposition parameters. The study is intended to extend our understanding of the properties of a-C:H films. Samples prepared by James Johnson, similar to those used in his previous studies (using mainly 4 separate sets of deposition parameters), were evaluated along with other samples which were unique to this study. Film preparation parameters were varied to allow an examination of the effects induced through the variation of deposition power level, partial substitution of nitrogen for methane in the deposition process gasses and post-deposition thermal annealing. The film optical properties were evaluated using combination of non-destructive test methods, including Raman scattering, photoluminescence (PL), optical absorption and photoluminescence excitation (PLE) spectroscopies. Different PL responses at low temperature (6 K) were recorded for doped and/or annealed samples deriving from the main set of samples. Two new features at 564 and 637 nm of nitrogen doped films replaced the 597 and 703 nm of undoped films. For the first time, three Raman phonon peaks were observed in a nitrogen doped and annealed film. Additional FTIR data indicated that the third Raman phonon peak was associated with CH2 and CH3 bonding structures. The Raman scattering data contributed to an improved understanding of the two-phase (sp2, sp3) model developed by Robertson. Optical absorption measurements could only be obtained for the films deposited on fused quartz. All other measurements were made on films deposited on silicon, which is opaque in

  17. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  18. Glassy dynamics and heterogeneity of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Inoue, Rintaro; Kawashima, Kazuko; Miyazaki, Tsukasa; Matsuba, Go; Nishida, Koji; Tsukushi, Itaru; Shibata, Kaoru; Hino, Masahiro

    2009-01-01

    We review our recent studies on glassy dynamics and glass transition of polymer thin films using neutron and X-ray reflectivity and inelastic neutron techniques. In the last decade extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties such as reduction in the glass transition temperature T g with film thickness and negative thermal expansivity for thin films below about 25 nm, and often some contradictory experimental results have been reported. It is believed that a key to solve the controversial situation is to disclose heterogeneous structure or multi-layer structure in polymer thin films. In the review, therefore, we summarize our recent experimental results by neutron and X-ray reflectivity and inelastic neutron scattering, focusing on the dynamic heterogeneity in polymer thin films. (author)

  19. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  20. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  1. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  2. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  3. Introduction to thin film transistors physics and technology of TFTs

    CERN Document Server

    Brotherton, S D

    2013-01-01

    Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

  4. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-12-31

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  5. The role of microstructural phenomena in magnetic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Laughlin, D.E.; Lambeth, D.N.

    1992-01-01

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  6. Laser scribing of polycrystalline thin films

    Science.gov (United States)

    Compaan, A. D.; Matulionis, I.; Nakade, S.

    2000-07-01

    We have investigated the use of several different types of lasers for scribing of the polycrystalline materials used for thin-film solar cells: CdTe, CuInGaSe 2 (CIGS), ZnO, SnO 2, Mo, Al, and Au. The lasers included four different neodymium-yttrium-aluminum garnet (Nd:YAG) (both 1064 and 532 nm wavelengths), a Cu vapor (511/578 nm), an XeCl excimer (308 nm), and a KrF excimer (248 nm). Pulse durations ranged from ˜0.1 to ˜250 ns. We found that the fundamental and frequency-doubled wavelengths of the Nd:YAG systems work well for almost all of the above materials except for the transparent conductor ZnO. The diode-laser-pumped Nd:YAG was particularly convenient to use. For ZnO the uv wavelengths of the two excimer lasers produced good results. Pulse duration was found generally not to be critical except for the case of CIGS on Mo where longer pulse durations (≥250 ns) are advantageous. The frequently observed problem of ridge formation along the edges of scribe lines in the semiconductor films can be eliminated by control of intensity gradients at the film through adjustment of the focus conditions.

  7. Magnetism of FePt Thin Films

    Science.gov (United States)

    Alqhtany, Norah H.

    Materials with large magnetic anisotropy have received significant attention from the scientific community due to its advantages in technological applications. Equiatomic FePt has been identified as such a material which could possibly be a potential candidate for ultra- high density magnetic recording and other applications like permanent magnets. FePt thin films exhibit ordered L10 texture with high magnetocrystalline anisotropy and high saturation magnetization which seem lucrative for technological applications. This thesis presents an investigation of structural and magnetic properties of granular and epitaxial FePt films with L10 phase prepared by DC sputtering on different substrates (SrTiO3 and glass). X-ray Diffraction (XRD), Atomic Force Microscopy/Magnetic Force Microscopy (AFM/MFM) and Vibrating Sample Magnetometer (VSM) were employed in characterization process. The measurements obtained from these equipment were significant in establishing the relationship between the microstructure and the magnetic properties of these films. The symmetry and magnitude of magnetic anisotropy has also been analyzed and discussed in detail.

  8. Pressureless Bonding Using Sputtered Ag Thin Films

    Science.gov (United States)

    Oh, Chulmin; Nagao, Shijo; Suganuma, Katsuaki

    2014-12-01

    To improve the performance and reliability of power electronic devices, particularly those built around next-generation wide-bandgap semiconductors such as SiC and GaN, the bonding method used for packaging must change from soldering to solderless technology. Because traditional solders are problematic in the harsh operating conditions expected for emerging high-temperature power devices, we propose a new bonding method in this paper, namely a pressureless, low-temperature bonding process in air, using abnormal grain growth on sputtered Ag thin films to realize extremely high temperature resistance. To investigate the mechanisms of this bonding process, we characterized the microstructural changes in the Ag films over various bonding temperatures and times. We measured the bonding properties of the specimens by a die-shear strength test, as well as by x-ray diffraction measurements of the residual stress in the Ag films to show how the microstructural developments were essential to the bonding technology. Sound bonds with high die strength can be achieved only with abnormal grain growth at optimum bonding temperature and time. Pressureless bonding allows for production of reliable high-temperature power devices for a wide variety of industrial, energy, and environmental applications.

  9. Surface microtopography of thin silver films

    Science.gov (United States)

    Costa, Manuel F. M.; Almeida, Jose B.

    1991-01-01

    The authors present ne applications for the recently developed nori-contact optical inicrotopographer emphasizing the results of topographic inspections of thin silver films edges. These films were produced by sputtering of silver through different masks, using a planar magnetron source. The results show the influence ot the thickness and position of the masks on the topography of the film near its edge. Topographic information is obtained from the horizontal shift incurred by the bright spot on an horizontal surface, which is displaced vertically, when this is illuminated by an oblique collimated laser beam. The laser beam is focused onto the surface into a diffraction limited spot and is made to sweep the surface to be examined.. The horizontal position of the bright spot is continuously imaged onto a light detector array and the information about individual detectors that are activated is used to compute the corresponding horizontal shift on the reference plane. Simple trignometric calculations are used to relate the horizontal shift to the distance between the surface and a reference plane at each sampling point and thus a map of the surface topography can be built.

  10. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  11. Factors affecting surface and release properties of thin PDMS films

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Junker, Michael Daniel; Skov, Anne Ladegaard

    2013-01-01

    Polydimethysiloxane (PDMS) elastomers are commonly used as dielectric electroactive polymers (DEAP). DEAP films are used in making actuators, generators and sensors. In the large scale manufacture of DEAP films, release of films from the substrate (carrier web) induces some defects and pre......-strain in the films which affect the overall performance of the films. The current research is directed towards investigating factors affecting the peel force and release of thin, corrugated polydimethylsiloxane films used in DEAP films. It has been shown that doping the PDMS films with small quantities...

  12. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  13. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  14. Thermochemical hydrogen sensor based on Pt-coated nanofiber catalyst deposited on pyramidally textured thermoelectric film

    Science.gov (United States)

    Kim, Seil; Song, Yoseb; Lee, Young-In; Choa, Yong-Ho

    2017-09-01

    The hydrogen gas-sensing performance has been systemically investigated of a new type of thermochemical hydrogen (TCH) sensor, composed of pyramidally textured thermoelectric (TE) film and catalytic Pt-coated nanofibers (NFs) deposited over the TE film. The TE film was composed of stoichiometric Bi2Te3, synthesized by means of cost-effective electrochemical deposition onto a textured silicon wafer. The resulting pyramidally textured TE film played a critical role in maximizing hydrogen gas flow around the overlying Pt NFs, which were synthesized by means of electrospinning followed by sputtering and acted as a heating catalyst. The optimal temperature increase of the Pt NFs was determined by means of optimizations of the electrospinning and sputtering durations. The output voltage signal of the optimized TCH sensor based on Pt NFs was 17.5 times higher than that of a Pt thin film coated directly onto the pyramidal TE material by using the same sputtering duration, under the fixed conditions of 3 vol% H2 in air at room temperature. This observation can be explained by the increased surface area of (111) planes accessible on the Pt-coated NFs. The best response time and recovery time observed for the optimized TCH sensor based on Pt-coated NFs were respectively 17 and 2 s under the same conditions. We believe that this type of TCH sensor can be widely used for supersensitive hydrogen gas detection by employing small-size Pt NFs and various chalcogenide thin films with high thermoelectric performance.

  15. Magnetic thin films for high-density recording

    NARCIS (Netherlands)

    Lodder, J.C.

    1996-01-01

    Magnetic and magneto-optic recording technologies are continuing to evolve at a rapid pace resulting in longer playing times and more data being stored in ever decreasing volumes. Thin-film media are playing an important role in this process. Three different type of thin-film media are discussed

  16. Bonding of a niobium wire to a niobium thin film

    NARCIS (Netherlands)

    Jaszczuk, W.; Jaszczuk, W.; ter Brake, Hermanus J.M.; Flokstra, Jakob; Veldhuis, Dick; Stammis, R.; Rogalla, Horst

    1991-01-01

    A method for bonding a niobium wire to a niobium thin film is described. The bonds are to be used as superconducting connections between wire-wound gradiometers and thin-film coupling coils on DC SQUIDS. The method is characterized by two steps. Firstly, the hardness of the niobium wire is reduced

  17. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  18. Ferroelectricity in Sodium Nitrite Thin Films | Britwum | Journal of the ...

    African Journals Online (AJOL)

    Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a ...

  19. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  20. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  1. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid

  2. Cadmium sulphide thin film for application in gamma radiation ...

    African Journals Online (AJOL)

    Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

  3. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  4. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  5. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  6. Thermal properties and stabilities of polymer thin films

    International Nuclear Information System (INIS)

    Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

    2009-01-01

    Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

  7. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Unknown

    Dip-coated hydrotungstite thin films as humidity sensors. G V KUNTE, UJWALA AIL, S A SHIVASHANKAR and A M UMARJI*. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India. MS received 6 December 2004; revised 28 February 2005. Abstract. Thin films of a hydrated phase of tungsten ...

  8. Thermal stability of gold-PS nanocomposites thin films

    Indian Academy of Sciences (India)

    Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

  9. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  10. Development of CIGS2 thin film solar cells

    International Nuclear Information System (INIS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

  11. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  12. Hydrogen in magnesium palladium thin layer structures

    NARCIS (Netherlands)

    Kruijtzer, G.L.

    2008-01-01

    In this thesis, the study of hydrogen storage, absorption and desorption in magnesium layers is described. The magnesium layers have a thickness of 50-500 nm and are covered by a palladium layer which acts as a hydrogen dissociation/association catalyst. The study was preformed under ultra high

  13. Grain coarsening mechanism of Cu thin films by rapid annealing

    International Nuclear Information System (INIS)

    Sasajima, Yasushi; Kageyama, Junpei; Khoo, Khyoupin; Onuki, Jin

    2010-01-01

    Cu thin films have been produced by an electroplating method using nominal 9N anode and nominal 6N CuSO 4 .5H 2 O electrolyte. Film samples were heat-treated by two procedures: conventional isothermal annealing in hydrogen atmosphere (abbreviated as H 2 annealing) and rapid thermal annealing with an infrared lamp (abbreviated as RTA). After heat treatment, the average grain diameters and the grain orientation distributions were examined by electron backscattering pattern analysis. The RTA samples (400 o C for 5 min) have a larger average grain diameter, more uniform grain distribution and higher ratio of (111) orientation than H 2 annealed samples (400 o C for 30 min). This means that RTA can produce films with coarser and more uniformly distributed grains than H 2 annealing within a short time, i.e. only a few minutes. To clarify the grain coarsening mechanism, grain growth by RTA was simulated using the phase field method. The simulated grain diameter reaches its maximum at a heating rate which is the same order as that in the actual RTA experiment. The maximum grain diameter is larger than that obtained by H 2 annealing with the same annealing time at the isothermal stage as in RTA. The distribution of the misorientation was analyzed which led to a proposed grain growth model for the RTA method.

  14. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  15. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-01

    Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/Vṡs, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.

  16. Thermally stable antireflective coatings based on nanoporous organosilicate thin films.

    Science.gov (United States)

    Kim, Suhan; Cho, Jinhan; Char, Kookheon

    2007-06-05

    Thermally stable nanoporous organosilicate thin films were realized by the microphase separation of pore-generating polymers mixed with an organosilicate matrix to be antireflective coatings (ARCs), for which a thin film with a refractive index (n) of 1.23 for zero reflection is required. The refractive index of such nanoporous organosilicate films can be tuned from 1.39 down to 1.23 by incorporating nanopores within the films. With a nanoporous single layer with n approximately 1.23, the light transmittance of the glass above 99.8% was achieved in the visible range (lambda approximately 550 nm). To overcome the limitation on the narrow wavelength for high transmittance imposed by a single antireflective nanoporous thin film, bilayer thin films with different refractive indices were prepared by placing a high refractive index layer with a refractive index of 1.45 below the nanoporous thin film. UV-vis transmittance of a glass coated with the bilayer films was compared with nanoporous single-layer films and it is demonstrated that the novel broadband antireflection coatings in a wide range of visible wavelength can be easily obtained by the organosilicate bilayer thin films described in this study. Also, ARCs developed in this study demonstrate excellent AR durability owing to the hydrophobic nature of the organosilicate matrix.

  17. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  18. Thin Films of Quasicrystals: Optical, Electronic, and Mechanical Properties

    Science.gov (United States)

    Symko, Orest G.

    1998-03-01

    In order to extend some of the unusual properties of quasicrystals toward practical applications and to study fundamental aspects of these properties, we have developed a technology for the deposition of high quality thin films of quasicrystals on a variety of substrates. Mechanical support for the thin films is provided by the substrate as bulk quasicrystals are brittle. We have applied the thin films to studies of their optical, electrical, and mechanical properties as well as to coatings of biomedical devices. An important characteristic of a quasicrystal is its pseudogap in the electronic density of states; it is determined directly from optical transmission measurements. Optical and mechanical characteristics of the thin films provide strong support for the cluster nature of quasicrystals and emphasize their importance for coatings. When used in biomedical devices, thin film quasicrystalline coatings show remarkable strength, low friction, and non-stick behavior. This work was in collaboration with W. Park, E. Abdel-Rahman, and T. Klein.

  19. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  20. Thermoluminescence of thin films deposited by laser ablation

    International Nuclear Information System (INIS)

    Escobar A, L.; Camps, E.; Arrieta, A.; Romero, S.; Gonzalez, P.R.; Olea M, O.; Diaz E, R.

    2003-01-01

    Materials in thin film form have received great attention in the last few years mainly because of their singular properties, which may differ significantly from their bulk attributes making them attractive for a wide variety of applications. In particular, thermoluminescence (Tl) properties of thin films have been studied recently owing to their potential applications in detection for both ionizing and non ionizing radiation. The aim of the present work is to report the synthesis and characterization of C Nx, aluminum oxide and titanium oxide thin films. Thermoluminescence response of the obtained thin films was studied after subject thin films to UV radiation (254 nm) as well as to gamma radiation (Co-60). Thermoluminescence glow curves exhibited a peak centered at 150 C for CN x whereas for titanium oxide the glow curve shows a maximum peaking at 171 C. Characterization of the physical properties of the deposited materials is presented. (Author)

  1. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  2. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  3. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  4. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  5. Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

    KAUST Repository

    Vlček, Marián

    2015-07-01

    A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

  6. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  7. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  8. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  9. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  10. Printed Thin Film Transistors: Research from China.

    Science.gov (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang

    2018-03-01

    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  11. Superconducting fluctuations in molybdenum nitride thin films

    Science.gov (United States)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2018-02-01

    MoN thin films have been deposited using reactive sputtering. The change in resistance near superconducting transition temperature at various magnetic fields has been analyzed based on superconducting fluctuations in the system. The Aslamazov and Larkin scaling theory has been utilized to analyze the conductance change. The results indicate that most of the measurements show two dimensional (2D) nature and exhibit scaling behavior at lower magnetic fields (7T). We have also analyzed our data based on the model in which there is no explicit dependence of Tc. These analyses also substantiate a crossover from a 2D nature to a 3D at larger fields. Analysis using lowest Landau level scaling theory for a 2D system exhibit scaling behavior and substantiate our observations. The broadening at low resistance part has been explained based on thermally activated flux flow model and show universal behavior. The dependence of Uo on magnetic field indicates both single and collective vortex behavior.

  12. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  13. Amperometric noise at thin film band electrodes.

    Science.gov (United States)

    Larsen, Simon T; Heien, Michael L; Taboryski, Rafael

    2012-09-18

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive polymers and measured the current noise in physiological buffer solution for a wide range of different electrode areas. The noise measurements could be modeled by an analytical expression, representing the electrochemical cell as a resistor and capacitor in series. The studies revealed three domains; for electrodes with low capacitance, the amplifier noise dominated, for electrodes with large capacitances, the noise from the resistance of the electrochemical cell was dominant, while in the intermediate region, the current noise scaled with electrode capacitance. The experimental results and the model presented here can be used for choosing an electrode material and dimensions and when designing chip-based devices for low-noise current measurements.

  14. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  15. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  16. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Beringer, Douglas [College of William and Mary, Williamsburg, VA (United States)

    2017-08-01

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.

  17. Glass transition and thermal expansivity of polystyrene thin films

    International Nuclear Information System (INIS)

    Inoue, R.; Kanaya, T.; Miyazaki, T.; Nishida, K.; Tsukushi, I.; Shibata, K.

    2006-01-01

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T g and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements

  18. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  19. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  20. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  1. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    Thin films of a hydrated phase of tungsten oxide, viz. hydrotungstite, have been prepared on glass substrates by dip-coating method using ammonium tungstate precursor solution. X-ray diffraction shows the films to have a strong -axis orientation. The resistance of the films is observed to be sensitive to the humidity content ...

  2. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  3. Strain-induced properties of epitaxial VOx thin films

    NARCIS (Netherlands)

    Rata, AD; Hibma, T

    We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films

  4. Thin-film cryogenic resistors from aluminium alloys

    Science.gov (United States)

    Tadros, N. N.; Holdeman, L. B.

    The temperature dependence of the resistances of thin films sputtered from three commercially available aluminium alloys (5052, 5086, 5456) has been measured in the temperature range 1.5-4.2 K. The 5052-alloy films had a positive temperature coefficient of resistance (TCR) throughout this temperature range, whereas films of the other two alloys had a negative TCR.

  5. OPTIMISATION OF SPRAY DEPOSITED Sno2 THIN FILM FOR ...

    African Journals Online (AJOL)

    Dr Obe

    1987-09-01

    Sep 1, 1987 ... ABSTRACT. The use of conducting tin-oxide (SnO2 ) films for fabrication of solar cell is becoming increasingly important because of reasonably high efficiency and ease in fabrication. The role of the thin-oxide film is very critical for high efficiency. Resistivity, thickness and transmittance of the film should be ...

  6. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    Science.gov (United States)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  7. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  8. Polymer Based Thin Film Screen Preparation Technique

    Science.gov (United States)

    Valais, I.; Michail, C.; Fountzoula, C.; Fountos, G.; Saatsakis, G.; Karabotsos, A.; Panayiotakis, G. S.; Kandarakis, I.

    2017-11-01

    Phosphor screens, mainly prepared by electrophoresis, demonstrate brightness equal to the standard sedimentation on glass or quartz substrate process and are capable of very high resolution. Nevertheless, they are very fragile, the shape of the screen is limited to the substrate shape and in order to achieve adequate surface density for application in medical imaging, a significant quantity of the phosphor will be lost. Fluorescent films prepared by the dispersion of phosphor particles into a polymer matrix could solve the above disadvantages. The aim of this study is to enhance the stability of phosphor screens via the incorporation of phosphor particles into a PMMA (PolyMethyl MethAcrylate) matrix. PMMA is widely used as a plastic optical fiber, it shows almost nearly no dispersion effects and it is transparent in the whole visible spectral range. Different concentrations of PMMA in MMA (Methyl Methacrylate) were examined and a 37.5 % w/w solution was used for the preparation of the thin polymer film, since optical quality characteristics were found to depend on PMMA in MMA concentration. Scanning Electron Microscopy (SEM) images of the polymer screens demonstrated high packing density and uniform distribution of the phosphor particles. This method could be potentially used for phosphor screen preparation of any size and shape.

  9. Electroluminescence of doped organic thin films

    Science.gov (United States)

    Tang, C. W.; VanSlyke, S. A.; Chen, C. H.

    1989-05-01

    Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 Å near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.

  10. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  11. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  12. Epitaxial growth and electronic structure of oxyhydride SrVO{sub 2}H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tsukasa; Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Yamada, Keisuke; Onozuka, Tomoya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Shigematsu, Kei [Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan); Minohara, Makoto; Kumigashira, Hiroshi [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan)

    2016-08-28

    Oxyhydride SrVO{sub 2}H epitaxial thin films were fabricated on SrTiO{sub 3} substrates via topotactic hydridation of oxide SrVO{sub 3} films using CaH{sub 2}. Structural and composition analyses suggested that the SrVO{sub 2}H film possessed one-dimensionally ordered V-H{sup −}-V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO{sub 2}H film was reversible to SrVO{sub 3} by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V{sup 3+} valence state in the SrVO{sub 2}H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  13. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  14. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  15. Plasma polymerised thin films for flexible electronic applications

    International Nuclear Information System (INIS)

    Jacob, Mohan V.; Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna; Shanks, Robert A.

    2013-01-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer

  16. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: mohan.jacob@jcu.edu.au [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)

    2013-11-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  17. Thin Film Evaporation of Receding Meniscus within Micro Pillar Arrays

    Science.gov (United States)

    Alhosani, Mohamed H.; Alsheghri, Ammar A.; Alghaferi, Amal; Zhang, Tiejun

    2015-03-01

    Evaporation is a key process in power generation, water desalination, and thermal management applications. It has been proved that hydrophilic micro structured surfaces can enhance the convection heat transfer by promoting high-performance thin film evaporation and enlarging the total heat transfer surface area. When depositing a water droplet on hydrophilic structured surfaces, two distinct regions can be observed, a) central region with water level higher than the micro pillar height (droplet region), b) thin film region as a result of liquid meniscus receding among micro structures. In this study, we are able to probe the physics of thin film evaporation of receding liquid meniscus among micro pillar arrays with different pillar heights, spacings and diameters. Heat transfer is systematically studied in the droplet and thin film region for each sample. Also, Young-Laplace equation and kinetic theory of mass transport are used to model the thin film evaporation around micro pillars. With the proposed model, the shape of meniscus around micro pillars and the diameter of droplet/extended thin film region can be predicted and compared with the experimental measurement. The model can also be extended to model thin film evaporation of meniscus within nano structured surfaces. Supported by cooperative agreement between Masdar Inst and MIT.

  18. Resistivity of thiol-modified gold thin films

    International Nuclear Information System (INIS)

    Correa-Puerta, Jonathan; Del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2014-01-01

    In this work, we study the effect of thiol self assembled monolayers on the electrical resistivity of metallic thin films. The analysis is based on the Fuchs–Sondheimer–Lucas theory and on electrical transport measurements. We determined resistivity change due to dodecanethiol adsorption on gold thin films. For this purpose, we controlled the deposition and annealing temperatures of the films to change the surface topography and to diminish the effect of electron grain boundary scattering. Results show that the electrical response to the absorption of thiols strongly depends on the initial topography of the surface. - Highlights: • We study the effect of self assembled monolayers on the resistivity of thin films. • Fuchs–Sondheimer theory reproduces the resistivity increase due to thiol deposition. • We determined resistivity change due to dodecanethiol deposition on gold thin films. • The electrical response strongly depends on the substrate surface topography

  19. Adsorption of hydrogen on clean and modified magnesium films

    DEFF Research Database (Denmark)

    Johansson, Martin; Ostenfeld, Christopher Worsøe; Chorkendorff, Ib

    2006-01-01

    The sticking of hydrogen on 400 A thick magnesium films, grown under ultrahigh vacuum conditions, have been measured under conditions relevant for hydrogen storage, i.e., elevated temperatures and pressures. A model which describes the hydrogenation and desorption kinetics of the pure magnesium...

  20. Development of Flexible Electrochromic Device with Thin-Film Configuration

    Science.gov (United States)

    Yoshimura, Hideo; Sakaguchi, Tomonori; Koshida, Nobuyoshi

    2007-04-01

    As we reported previously, the carrier accumulation mechanism is very useful for obtaining a quick-response electrochromic (EC) device with the inorganic-thin-film configuration. To confirm the availability of this concept for flexible substrates, the EC device has been fabricated on a polymeric film. The device is composed of a top semitransparent electrode, an electrolytic thin Ta2O5 film, a very thin SiO2 film, a thin amorphous WO3 film, and an indium-tin-oxide-coated poly(ethylene terephthalate) (PET) film. The experimental results show that the insertion of thin SiO2 film significantly accelerates the EC coloration as in the case of glass substrates. In accordance with cyclic voltammogram analyses, the enhanced EC kinetics is associated with an increased EC efficiency owing to the carrier accumulation effect of thin SiO2 film. The present result is potentially useful for development of flexible paper-like EC display devices and simple optical control systems.

  1. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    Science.gov (United States)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  2. Multifunctional Parylene-C Microfibrous Thin Films

    Science.gov (United States)

    Chindam, Chandraprakash

    Towards sustainable development, multifunctional products have many advantageous over single-function products: reduction in number of parts, raw material, assembly time, and cost involved in a product's life cycle. My goal for this thesis was to demonstrate the multifunctionalities of Parylene-C microfibrous thin films. To achieve this goal, I chose Parylene C, a polymer, because the fabrication of periodic mediums of Parylene C in the form of microfibrous thin films (muFTFs) was already established. A muFTFs is a parallel arrangement of identical micrometer-sized fibers of shapes cylindrical, chevronic, or helical. Furthermore, Parylene C had three existing functions: in medical-device industries as corrosion-resistive coatings, in electronic industries as electrically insulating coatings, and in biomedical research for tissue-culture substrates. As the functionalities of a material are dependent on the microstructure and physical properties, the investigation made for this thesis was two-fold: (1) Experimentally, I determined the wetting, mechanical, and dielectric properties of columnar muFTFs and examined the microstructural and molecular differences between bulk films and muFTFs. (2) Using physical properties of bulk film, I computationally determined the elastodynamic and determined the electromagnetic filtering capabilities of Parylene-C muFTFs. Several columnar muFTFs of Parylene C were fabricated by varying the monomer deposition angle. Following are the significant experimental findings: 1. Molecular and microstructural characteristics: The dependence of the microfiber inclination angle on the monomer deposition angle was classified into four regimes of two different types. X-ray diffraction experiments indicated that the columnar muFTFs contain three crystal planes not evident in bulk Parylene-C films and that the columnar muFTFs are less crystalline than bulk films. Infrared absorbance spectra revealed that the atomic bonding is the same in all

  3. Mg:Nb films produced by pulsed laser deposition for hydrogen storage

    Energy Technology Data Exchange (ETDEWEB)

    Mosaner, Paolo; Bazzanella, Nicola; Bonelli, Marco; Checchetto, Riccardo; Miotello, Antonio

    2004-04-25

    Magnesium thin films with controlled Nb content (Mg:Nb) were deposited by pulsed laser deposition (PLD) in a single step process using a composite target consisting on separate zones of matrix (Mg) and alloying element (Nb). Scanning electron microscopy (SEM) analysis showed a double structure of the thin film samples consisting on a homogeneous thin film {approx}1 {mu}m thick and large Mg:Nb spheres with dimensions ranging from {approx}1 {mu}m for energy density of the laser pulse lower than 10 J/cm{sup 2} to {approx}10 {mu}m for higher energy, 30-40 J/cm{sup 2}. The crystalline structure of the deposited samples consisted of (0 0 1) oriented Mg layers with Nb atomically dispersed in the Mg structure or in form of nanoclusters. A preliminary test on the hydrogen absorption capacity of the PLD deposited samples was carried out by thermal desorption spectroscopy (TDS)

  4. Fabrication and Film Qualification of Sr Modified Pb(Ca) TiO3 Thin Films

    International Nuclear Information System (INIS)

    Naw Hla Myat San; Khin Aye Thwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Strontium and calcium - modified lead titanate (Pb0.7 Ca0.15 Sr0.15 ) TiO3 (PCST)thin films were prepared by using spin coating technique. Phase transition of PCST was interpreted by means of Er-T characteristics. Process temperature dependence on micro-structure of PCST film was studied. Charge conduction mechanism of PCST thin film was also investigated for film qualification.

  5. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  6. Copper doped nickel ferrite nano-crystalline thin films: A potential gas sensor towards reducing gases

    Energy Technology Data Exchange (ETDEWEB)

    Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita, E-mail: smb.agc@gmail.com

    2016-03-01

    NiFe{sub 2}O{sub 4} and (1 wt% and 3 wt%) Cu:NiFe{sub 2}O{sub 4} thin films have been fabricated using spray pyrolysis deposition technique at 350 °C and then sintered at 650 °C for 3 h. X-ray diffraction, SEM, EDAX, UV-VIS spectroscopy, SQUID VSM were carried out to investigate phase formation, microstructural and influence of Cu doping on magnetic properties of NiFe{sub 2}O{sub 4} thin films. The gas response towards various gases viz. ethanol, Liquid Petroleum Gas (LPG), methanol and hydrogen sulfide (H{sub 2}S) is investigated. The results of XRD revealed that all samples had shown the principal phase of nickel ferrite and the lattice parameter was found to vary from 8.294 Å to 8.314 Å on an incorporation of Cu, and the crystalline sizes were about 40–45 nm. The effect of Cu concentration on saturation magnetization and coercive force were studied. The maximum value of saturation magnetization calculated from hysteresis loop was 89.16 emu/g at room temperature and 96.88 emu/g at 50 K. Cu content on the film surface was found to be maximum for 1 wt% Cu:NiFe{sub 2}O{sub 4} thin film and this film showed an improved response towards all gases. Response of ethanol for NiFe{sub 2}O{sub 4} thin film was found to be higher as compared to all the other gases. The lowering of the optimum operating temperature is observed in 1 wt% Cu:NiFe{sub 2}O{sub 4} thin film with higher selectivity towards ethanol than other gases. All results indicated that the Cu doping in nickel ferrite thin films has a significant influence on the properties. - Highlights: • Cu:NiFe{sub 2}O{sub 4} thin films are synthesized by low cost spray pyrolysis technique. • Addition of Cu content improves magnetic properties. • Cu content on the surface of the film enhances the gas response. • NiFe{sub 2}O{sub 4} thin films exhibit predominant selectivity towards ethanol. • 1 wt% Cu:NiFe{sub 2}O{sub 4} film responses towards ethanol at lower optimum temperature.

  7. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  8. Stability of tetraphenyl butadiene thin films in liquid xenon

    International Nuclear Information System (INIS)

    Sanguino, P.; Balau, F.; Botelho do Rego, A.M.; Pereira, A.; Chepel, V.

    2016-01-01

    Tetraphenyl butadiene (TPB) is widely used in particle detectors as a wavelength shifter. In this work we studied the stability of TPB thin films when immersed in liquid xenon (LXe). The thin films were deposited on glass and quartz substrates by thermal evaporation. Morphological and chemical surface properties were monitored before and after immersion into LXe by scanning electron microscopy and X-ray photoelectron spectroscopy. No appreciable changes have been detected with these two methods. Grain size and surface chemical composition were found to be identical before and after submersion into LXe. However, the film thickness, measured via optical transmission in the ultraviolet–visible wavelength regions, decreased by 1.6 μg/cm 2 (24%) after immersion in LXe during 20 h. These results suggest the necessity of using a protective thin film over the Tetraphenyl butadiene when used as a wavelength shifter in LXe particle detectors. - Highlights: • Stability of tetraphenyl butadiene (TPB) thin films immersed in liquid xenon (LXe). • Thermally evaporated TPB thin films were immersed in LXe for 20 h. • Film morphology and chemical surface properties remained unchanged. • Surface density of the films decreased by 1.6 μg/cm 2 (24%) after immersion in LXe. • For using in LXe particle detectors, TPB films should be protected with a coating.

  9. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  10. Buckling of Thin Films in Nano-Scale

    Science.gov (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.

    2010-06-01

    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  11. Principles of electron backscattering by solids and thin films

    International Nuclear Information System (INIS)

    Niedrig, H.

    1977-01-01

    The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

  12. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  13. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  14. Rapid protein immobilization for thin film continuous flow biocatalysis.

    Science.gov (United States)

    Britton, Joshua; Raston, Colin L; Weiss, Gregory A

    2016-08-09

    A versatile enzyme immobilization strategy for thin film continuous flow processing is reported. Here, non-covalent and glutaraldehyde bioconjugation are used to immobilize enzymes on the surfaces of borosilicate reactors. This approach requires only ng of protein per reactor tube, with the stock protein solution readily recycled to sequentially coat >10 reactors. Confining reagents to thin films during immobilization reduced the amount of protein, piranha-cleaning solution, and other reagents by ∼96%. Through this technique, there was no loss of catalytic activity over 10 h processing. The results reported here combines the benefits of thin film flow processing with the mild conditions of biocatalysis.

  15. Plasma polymerized hexamethyldisiloxane thin films for corrosion protection

    Science.gov (United States)

    Saloum, S.; Alkhaled, B.; Alsadat, W.; Kakhia, M.; Shaker, S. A.

    2018-01-01

    This study focused on the corrosion protection performance of plasma polymerized HMDSO thin films in two different corrosive medias, 0.3M NaCl and 0.3M H2SO4. The pp-HMDSO thin films were deposited on steel substrates for electrochemical tests using the potentiodynamic polarization technique, they were deposited also on aluminum and silicon substrates to investigate their resistance to corrosion, through the analysis of the degradation of microhardness and morphology, respectively, after immersion of the substrates for one week in the corrosive media. The results showed promising corrosion protection properties of the pp-HMDSO thin films.

  16. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  17. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam

    2010-01-01

    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  18. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  19. Superhydrophilic surface treatment for thin film NiTi vascular applications

    International Nuclear Information System (INIS)

    Chun, Youngjae; Levi, Daniel S.; Mohanchandra, K.P.; Carman, Gregory P.

    2009-01-01

    A variety of surface treatment methods were evaluated to modify the hydrophilic nature of thin film nitinol (NiTi). It has been suggested that increasing hydrophilicity reduces the prevalence of platelet adhesion and thrombosis in the vascular system. In this study, thin film NiTi was treated with three pretreatments cleaning, buffered oxide etchant (BOE), and BOE/nitric acid (HNO 3 ), followed by one surface treatment. The three surface treatment studied were UV irradiation, thermal treatment, or hydrogen peroxide. Two surface treatments, i.e., thermal at 600 deg. C for 30 min and 30% hydrogen peroxide treatment for 15 h, produced superhydrophilic surfaces, i.e., wetting angle = 0 deg. However, the superhydrophilic surface produced by the thermal treatment also embrittled the thin film due to the relative thickness of the oxide grown. Long term studies in air showed that all surface treatments trend toward hydrophobic natures. However, storage of the surface treated thin film NiTi in Deionized (DI) water preserved even the superhydrophilic surfaces indefinitely.

  20. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma; Peliculas delgadas de carbono amorfo hidrogenado (a-C:H) obtenidas mediante deposito quimico de vapores asistido por plasma

    Energy Technology Data Exchange (ETDEWEB)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico); Muhl S, S. [IIM-UNAM, 04510 Mexico D.F. (Mexico)

    2004-07-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H{sub 2}/CH{sub 4} in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10{sup -4} to 6x10{sup -4} Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  1. Crystallization of HWCVD amorphous silicon thin films at elevated temperatures

    CSIR Research Space (South Africa)

    Muller, TFG

    2006-01-01

    Full Text Available Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/ microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum...

  2. Thin Films for X-ray Optics

    Science.gov (United States)

    Conley, Raymond

    Focusing x-rays with refraction requires an entire array of lens instead of a single element, each contributing a minute amount of focusing to the system. In contrast to their visible light counterparts, diffractive optics require a certain depth along the optical axis in order to provide sufficient phase shift. Mirrors reflect only at very shallow angles. In order to increase the angle of incidence, contribution from constructive interference within many layers needs to be collected. This requires a multilayer coating. Thin films have become a central ingredient for many x-ray optics due to the ease of which material composition and thickness can be controlled. Chapter 1 starts with a short introduction and survey of the field of x-ray optics. This begins with an explanation of reflective multilayers. Focusing optics are presented next, including mirrors, zone plates, refractive lenses, and multilayer Laue lens (MLL). The strengths and weaknesses of each "species" of optic are briefly discussed, alongside fabrication issues and the ultimate performance for each. Practical considerations on the use of thin-films for x-ray optics fabrication span a wide array of topics including material systems selection and instrumentation design. Sputter deposition is utilized exclusively for the work included herein because this method of thin-film deposition allows a wide array of deposition parameters to be controlled. This chapter also includes a short description of two deposition systems I have designed. Chapter 2 covers a small sampling of some of my work on reflective multilayers, and outlines two of the deposition systems I have designed and built at the Advanced Photon Source. A three-stripe double multilayer monochromator is presented as a case study in order to detail specifications, fabrication, and performance of this prolific breed of x-ray optics. The APS Rotary Deposition System was the first deposition system in the world designed specifically for multilayer

  3. Tools to synthesize the learning of thin films

    International Nuclear Information System (INIS)

    Rojas, Roberto; Fuster, Gonzalo; Sluesarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase differences required to match the conditions for constructive and destructive interference, in the reflected and transmitted light in four types of thin films. We consider thin films with varied sequences in the refractive index, which we identify as barriers, wells and stairs (up and down). Also, we use the conservation of energy in order to understand the complementary colour fringes observed in the reflected and transmitted light through thin films. We analyse systematically the phase changes by introducing a phase table and we synthesize the results in a circular diagram matching 16 physical situations of interference and their corresponding conditions on the film thickness. The phase table and the circular diagram are a pair of tools easily assimilated by students, and useful to organize, analyse and activate the knowledge about thin films.

  4. Radiation Effects in Interfaces and Thin Films

    Science.gov (United States)

    Mairov, Alexander

    One of the key approaches to developing materials with greater radiation damage resistance is to introduce a large fraction of internal interfaces. Interfaces act as sinks for recombination of radiation-induced defects and as sites for accumulation of helium bubbles, thereby diverting them away from grain boundaries, where they can induce embrittlement. The beneficial role of interfaces in mitigating radiation damage has been demonstrated in nanoscale multilayered structures and in nanograined materials. Another more common example is oxide dispersion strengthened (ODS) steels and nanostructured ferritic alloys (NFA) where a fine distribution of particles (clusters) of varying stoichiometries (e.g., Y2Ti2O7, Y2TiO 5, Y2O3, TiO2 and Y-Ti-O non-stoichiometric oxides) not only confer high creep strength, but also high radiation damage tolerance due to the large area of metal/oxide interfaces. However, the efficacy of these interfaces to act as defect sinks depends on their compositional and physical stability under radiation. With this background, this work focused on the stability of interfaces between Ti, TiO2, and Y2O 3 thin film deposited on Fe-12%Cr substrates after irradiation with 5MeV Ni+2 ions at various temperatures. TEM and STEM-EDS methods were used to understand the compositional changes at the interfaces. Additionally, accumulation of implanted helium at epitaxial and non-epitaxial Fe/Y 2O3 interfaces was also studied. Finally, the study was extended to study irradiation effects (up to 150 dpa) in novel Al2O 3 nanoceramic films with immediate potential applications as coatings for corrosion protection in the harsh high temperature environments of Gen IV reactors. This research is expected to have implications in the development of radiation damage tolerant nanostructured alloys for nuclear reactors while also expanding the scientific knowledge-base in the area of radiation stability of interfaces in solids and protective coatings.

  5. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  6. Electrochromic performances of nonstoichiometric NiO thin films

    International Nuclear Information System (INIS)

    Moulki, H.; Faure, C.; Mihelčič, M.; Vuk, A. Šurca; Švegl, F.; Orel, B.; Campet, G.; Alfredsson, M.; Chadwick, A.V.; Gianolio, D.; Rougier, A.

    2014-01-01

    Electrochromic (EC) performances of Ni 3+ containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni 3+ and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling

  7. Degradation process in organic thin film devices fabricated using ...

    Indian Academy of Sciences (India)

    hexylthiophene); organic semiconductors; conducting polymers; degradation. ... The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have ...

  8. Modeling surface imperfections in thin films and nanostructured surfaces

    DEFF Research Database (Denmark)

    Hansen, Poul-Erik; Madsen, J. S.; Jensen, S. A.

    2017-01-01

    Accurate scatterometry and ellipsometry characterization of non-perfect thin films and nanostructured surfaces are challenging. Imperfections like surface roughness make the associated modelling and inverse problem solution difficult due to the lack of knowledge about the imperfection...

  9. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    ZnTe) thin film on glass substrate in order to investigate the ... photovoltaic solar cells, light-emitting diodes, laser diodes, microwave devices .... integrated intensity ratio of a super lattice peak to a fun- damental peak. Comparing ...

  10. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  11. Self-organized structures in soft confined thin films

    Indian Academy of Sciences (India)

    organized creation of mesostructures in soft materials like thin films of polymeric liquids and elas- tic solids. These very small scale, highly confined systems are inherently unstable and thus self-organize into ordered structures which can be ...

  12. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  13. Laser Induced Chemical Vapor Deposition of Thin Films

    National Research Council Canada - National Science Library

    Zahavi, Joseph

    1995-01-01

    .... It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures...

  14. Thin carbon film serves as UV bandpass filter

    Science.gov (United States)

    1966-01-01

    Thin carbon film deposited on a 70 percent transparent screen provides a filter for narrow-band detectors in the extreme ultraviolet. The filter also suppresses scattered light and light of unwanted orders in vacuum spectrographs.

  15. Simple gun for vapor deposition of organic thin films

    International Nuclear Information System (INIS)

    Sato, N.; Seki, K.; Inokuchi, H.

    1987-01-01

    A simple evaporation gun for preparing organic thin films was fabricated using commercially available parts of an electron gun for a TV Braun tube. The device permits sample heating to be easily controlled because of the small heat capacity

  16. A thin film hydroponic system for plant studies

    Science.gov (United States)

    Hines, Robert; Prince, Ralph; Muller, Eldon; Schuerger, Andrew

    1990-01-01

    The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

  17. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail: mariarita.sierakowski@ufpr.br

    2009-03-01

    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  18. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  19. Degradation analysis of thin film photovoltaic modules

    International Nuclear Information System (INIS)

    Radue, C.; Dyk, E.E. van

    2009-01-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P MAX ) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial P MAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  20. Thin wetting film lens-less imaging

    International Nuclear Information System (INIS)

    Allier, C.P.; Poher, V.; Coutard, J.G.; Hiernard, G.; Dinten, J.M.

    2011-01-01

    Lens-less imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E. coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm 2 to 12 mm 2 to 24 mm 2 , which allows the detection of bacteria contained in 0.5 μl to 4 μl to 10 μl, respectively. (authors)

  1. Trends and new applications in thin films

    International Nuclear Information System (INIS)

    1996-01-01

    The proceedings of this symposium comprise 95 communications from which 64 were selected and fall into the scope of INIS subject categories, and 1 was selected for ETDE indexing. The selected communications deal with the techniques used for thin films preparation using chemical or physical vapor deposition techniques (plasma-arc or jet spraying, cathode sputtering, reactive DC or RF magnetron sputtering, plasma-ion deposition, ion implantation, electron or ion beam spraying, ion beam assisted plasma etching, dynamic ion mixing, distributed electron cyclotron resonance plasma sputtering, laser induced plasma sputtering etc..). The effects and interactions with the substrates (ion implantation, crystal growth, crystal-phase transformations, microstructures, penetration depth, changes in lattice parameters etc..) are analysed using various techniques such as grazing incidence X-ray diffraction, X-ray reflectometry, X-ray and angle resolved electron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectroscopy, SEM, TEM, IR absorption spectroscopy, UV or visible emission spectroscopy, conversion electron Moessbauer spectroscopy, X-ray fluorescence, mass spectroscopy, optical ellipsometry etc.. Mechanical tests such as scratch, microhardness and wear tests are also performed on the coatings to analyse their mechanical properties. (J.S.)

  2. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  3. Inverse bilayer magnetoelectric thin film sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Salzer, S.; Höft, M.; Knöchel, R. [Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-07-11

    Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

  4. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  5. Magnetostatic excitations in thin ferrite films

    International Nuclear Information System (INIS)

    Zil'berman, P.E.; Lugovskoi, A.V.

    1987-01-01

    The authors discuss the influence of the exchange interaction and dissipative processes in thin ferrite films on the eigenfrequency spectrum of magnetostatic standing waves and on the dispersion relation and attenuation of magnetostatic traveling waves. For the first time they obtain explicitly the dispersion relation for magnetostatic waves (MSWs) in a tangential saturating magnetic field H 0 to second order (inclusive) in the exchange interaction parameter λ. The authors obtain computer solutions for this equation in the complex frequency (ω) plane (for standing waves) or wave-number (q) plane (for traveling waves). The authors show that the dispersion relation constructed from the standing-wave spectrum is different from that of the traveling waves if λ≠0, even if dissipation is neglected. The traveling waves have auxiliary branches of the dispersion relation with weak damping near the spin-wave-resonance (SWR) frequencies. Dissipation has only a relatively weak effect on the frequency spectrum of the standing waves, shifting it upward. For the traveling waves, however, dissipation leads to qualitative changes in the structure of the dispersion relation, giving rise to new branches, forbidden bands, reentrant and anomalous-dispersion regions

  6. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  7. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  8. Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films

    International Nuclear Information System (INIS)

    Kail, F.; Hadjadj, A.; Roca i Cabarrocas, P.

    2005-01-01

    We have studied the evolution of the structure of intrinsic and doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. For this purpose, we combine in situ spectroscopic ellipsometry and secondary ion mass spectrometry measurements. We show that hydrogen diffuses faster in boron-doped hydrogenated amorphous silicon than in intrinsic samples, leading to a thicker subsurface layer from the early stages of hydrogen plasma exposure. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport, but there is no evidence for crystallization of the a-Si:H substrate. Moreover, we observe that once the microcrystalline layer is formed, hydrogen diffuses out of the sample

  9. Low-temperature H2 sensing in self-assembled organotin thin films.

    Science.gov (United States)

    Renard, Laetitia; Elhamzaoui, Hicham; Jousseaume, Bernard; Toupance, Thierry; Laurent, Guillaume; Ribot, François; Saadaoui, Hassan; Brötz, Joachim; Fuess, Hartmut; Riedel, Ralf; Gurlo, Aleksander

    2011-02-07

    Self-assembled nanoporous tin-based hybrid thin films prepared by the sol-gel method from organically-bridged ditin hexaalkynides detect hydrogen gas from 50 to 200 °C at the 200-10,000 ppm level. This finding opens a fully new class of gas-sensing materials as well as a new opportunity to integrate organic functionality in gas sensing metal oxides.

  10. Structural And Optical Properties Of VOx Thin Films

    Directory of Open Access Journals (Sweden)

    Schneider K.

    2015-06-01

    Full Text Available VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.

  11. Health, safety and environmental issues in thin film manufacturing

    OpenAIRE

    Alsema, E.A.; Baumann, A.E.; Hill, R.; Patterson, M.H.

    1997-01-01

    An investigation is made of Health, Safety and Environmental (HSE) aspects for the manufacturing, use and decommissioning of CdTe, CIS and a-Si modules. Issues regarding energy requirements, resource availability, emissions of toxic materials, occupational health and safety and module waste treatment are reviewed. Waste streams in thin film module manufacturing are analyzed in detail and treatment methods are discussed. Finally the technological options for thin film module recycling are inve...

  12. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  13. Simple flash evaporator for making thin films of compounds

    Energy Technology Data Exchange (ETDEWEB)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  14. Optical thin-film technology: past, present, future

    Science.gov (United States)

    Strickland, William P.

    1990-12-01

    The evolution of the vacuum coating industry is reviewed. Vacuum science progressed slowly until the late nineteenth century due to an incomplete understanding of vacuum and lack of applications. Edison's invention of the light bulb launched the vacuum industry and increased developmentof improved vacuum systems. The thin film optical coating industry arose from the needs of the German and U.S. military efforts during World War II. The author presents his experience in thin film coating from 1939 to the present.

  15. Thin film bulk acoustic wave devices : performance optimization and modeling

    OpenAIRE

    Pensala, Tuomas

    2011-01-01

    Thin film bulk acoustic wave (BAW) resonators and filters operating in the GHz range are used in mobile phones for the most demanding filtering applications and complement the surface acoustic wave (SAW) based filters. Their main advantages are small size and high performance at frequencies above 2 GHz. This work concentrates on the characterization, performance optimization, and modeling techniques of thin film BAW devices. Laser interferometric vibration measurements together with plat...

  16. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  17. Thermomagnetic marking of rare-earth-transition-metal thin films

    Science.gov (United States)

    Bartholomeusz, Brian Josef

    1989-01-01

    Analytical derivation of temperature profiles in laser-irradiated thin-film structures is hindered by the nature of the heat source terms and by the geometrical complexity that often exists. This study utilizes a combined Laplace-transform-Fourier-integral method to obtain approximate solutions for a number of simple cases. The results are used to study the thermomagnetic marking process in rare-earth-transition-metal (RE-TM) thin films, and the predictions are compared with experimental observations.

  18. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Abstract. For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8⋅5 mbar for 18 h. Argon and ...

  19. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  20. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  1. Femtosecond pulsed laser deposition of cobalt ferrite thin films

    Science.gov (United States)

    Dascalu, Georgiana; Pompilian, Gloria; Chazallon, Bertrand; Caltun, Ovidiu Florin; Gurlui, Silviu; Focsa, Cristian

    2013-08-01

    The insertion of different elements in the cobalt ferrite spinel structure can drastically change the electric and magnetic characteristics of CoFe2O4 bulks and thin films. Pulsed Laser Deposition (PLD) is a widely used technique that allows the growth of thin films with complex chemical formula. We present the results obtained for stoichiometric and Gadolinium-doped cobalt ferrite thin films deposited by PLD using a femtosecond laser with 1 kHz repetition rate. The structural properties of the as obtained samples were compared with other thin films deposited by ns-PLD. The structural characteristics and chemical composition of the samples were investigated using profilometry, Raman spectroscopy, X-Ray diffraction measurements and ToF-SIMS analysis. Cobalt ferrite thin films with a single spinel structure and a preferential growth direction have been obtained. The structural analysis results indicated the presence of internal stress for all the studied samples. By fs-PLD, uniform thin films were obtained in a short deposition time.

  2. Thin films as an emerging platform for drug delivery

    Directory of Open Access Journals (Sweden)

    Sandeep Karki

    2016-10-01

    Full Text Available Pharmaceutical scientists throughout the world are trying to explore thin films as a novel drug delivery tool. Thin films have been identified as an alternative approach to conventional dosage forms. The thin films are considered to be convenient to swallow, self-administrable, and fast dissolving dosage form, all of which make it as a versatile platform for drug delivery. This delivery system has been used for both systemic and local action via several routes such as oral, buccal, sublingual, ocular, and transdermal routes. The design of efficient thin films requires a comprehensive knowledge of the pharmacological and pharmaceutical properties of drugs and polymers along with an appropriate selection of manufacturing processes. Therefore, the aim of this review is to provide an overview of the critical factors affecting the formulation of thin films, including the physico-chemical properties of polymers and drugs, anatomical and physiological constraints, as well as the characterization methods and quality specifications to circumvent the difficulties associated with formulation design. It also highlights the recent trends and perspectives to develop thin film products by various companies.

  3. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    Science.gov (United States)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

  4. Reflectometric monitoring of the dissolution process of thin polymeric films.

    Science.gov (United States)

    Laitinen, Riikka; Räty, Jukka; Korhonen, Kristiina; Ketolainen, Jarkko; Peiponen, Kai-Erik

    2017-05-15

    Pharmaceutical thin films are versatile drug-delivery platforms i.e. allowing transdermal, oral, sublingual and buccal administration. However, dissolution testing of thin films is challenging since the commonly used dissolution tests for conventional dosage forms correspond rather poorly to the physiological conditions at the site of administration. Here we introduce a traditional optical reflection method for monitoring the dissolution behavior of thin polymeric films. The substances, e.g. drug molecules, released from the film generate an increase in the refractive index in the liquid medium which can be detected by reflectance monitoring. Thin EUDRAGIT ® RL PO poly(ethyl acrylate-co-methyl methacrylate-co trimethylammonioethyl methacrylate chloride) (RLPO) films containing the model drug perphenazine (PPZ) were prepared by spraying on a glass substrate. The glass substrates were placed inside the flow cell in the reflectometer which was then filled with phosphate buffer solution. Dissolution was monitored by measuring the reflectance of the buffer liquid. The method was able to detect the distinctive dissolution characteristics of different film formulations and measured relatively small drug concentrations. In conclusion, it was demonstrated that a traditional optical reflection method can provide valuable information about the dissolution characteristics of thin polymeric films in low liquid volume surroundings. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Sensing extremely limited H₂ contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor.

    Science.gov (United States)

    Lee, Young Tack; Jung, Hwaebong; Nam, Seung Hee; Jeon, Pyo Jin; Kim, Jin Sung; Jang, Byungjin; Lee, Wooyoung; Im, Seongil

    2013-10-07

    A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling.

  6. Properties of MoO3 thin film polymorphs

    International Nuclear Information System (INIS)

    McCarron, E.M.; Carcia, P.F.

    1987-01-01

    Thin film polymorphs of molybdenum trioxide have been synthesized by RF sputtering. Films deposited on thermally floating substrates are polycrystalline and exhibit preferred orientation. Depending upon the oxygen partial pressure maintained during sputtering, the films can be made to crystallize in either the thermodynamically stable orthorhombic α MoO 3 form (unique 2D-layered structure) or the metastable monoclinic β MoO 3 phase (3D ReO 3 -related structure). Metastable β films can be converted thermally to the α phase and the transformation appears topotactic. Films deposited on the cooled substrates are amorphous. A correlation between the particular phase formed and adatom mobility is noted

  7. Processing-Structure Correlation in DC Sputtered Molybdenum Thin Films

    Science.gov (United States)

    Khan, Majid; Islam, Mohammad; Akram, Aftab; Manzoor, Umair

    2013-12-01

    Molybdenum thin films were sputter deposited under different conditions of DC power and chamber pressure. The structure and topography of the films were investigated using AFM, SEM and XRD techniques. Van der Pauw method and tape test were employed to determine electrical resistivity and interfacial strength to the substrate, respectively. All the films are of sub-micron thickness with maximum growth rate of 78 nm/min and crystallite size in the range of 4 to 21 nm. The films produced at high power and low pressure exhibit compressive residual strains, low electrical resistivity and poor adhesion to the glass substrate, whereas the converse is true for films produced at high pressure.

  8. The deposition of magnesium fluoride (MGF 2 ) thin films by ...

    African Journals Online (AJOL)

    The Chemical Bath Deposition (CBD) technique was successfully employed in the growth of magnesium fluoride (MgF2) thin films. The films were characterized and optimized. The characterization included: the optical and solid state properties such as the transmittance (T)/reflectance (R) absorbance (A) spectra which ...

  9. Reorientation of magnetic anisotropy in epitaxial cobalt ferrite thin films

    NARCIS (Netherlands)

    Lisfi, A.; Williams, C.M.; Nguyen, L.T.; Lodder, J.C.; Coleman, A.; Corcoran, H.; Johnson, A.; Chang, P.; Abhishek Kumar, A.K.; Kumar, A.; Morgan, W.

    2007-01-01

    Spin reorientation has been observed in CoFe2O4 thin single crystalline films epitaxially grown on (100) MgO substrate upon varying the film thickness. The critical thickness for such a spin-reorientation transition was estimated to be 300 nm. The reorientation is driven by a structural transition

  10. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical ... capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial ... systems promising candidates for a wide range of electronic, magnetic and optical applications. However ...

  11. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical va- pour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (~ 550°C), while they grow with a strong (111) orientation as the.

  12. Experimental and Theoretical Approaches to Thin Film Lubrication Problems

    NARCIS (Netherlands)

    Lee-Prudhoe, I.; Venner, C.H.; Cann, P.M.; Spikes, H.; Snidle, R.W.; Evans, H.P.

    2006-01-01

    The last fifty years have seen tremendous advances in the field of thin film lubrication. This is particularly true of steady-state Elastohydrodynamic lubrication (EHL) where the accurate measurement of film thickness combined with advanced numerical modelling methods has been very successful.

  13. Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

    International Nuclear Information System (INIS)

    Vertoprakhov, Vladimir N; Nikulina, Lyubov' D; Igumenov, Igor K

    2005-01-01

    Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10-15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

  14. Preparation of self-supporting thin metal target films

    International Nuclear Information System (INIS)

    Wang Xiuying; Ge Suxian; Yin Jianhua; Yin Xu; Jin Genming

    1989-01-01

    The preparation method and equipment for thin metal self-supporting target without oil contamination are described. The influence of target films contaminated by oil vapor on accuracy of nuclear-physics experimental data are also discussed. The analytical results on carbon content in the prepared films of three elements show that the equipment is very effective for eliminating contamination

  15. Ultra thin films of nanocrystalline Ge studied by AFM and ...

    Indian Academy of Sciences (India)

    Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ...

  16. Optical Properties of Lead Silver Sulphide Ternary Thin Films ...

    African Journals Online (AJOL)

    Optical Properties of Lead Silver Sulphide Ternary Thin Films Deposited by Chemical Bath Method. ... The optical properties studied include reflectance, absorption coefficient, thickness, refractive index, extinction coefficient, optical conductivity and band gap energy. The films showed very high absorbance in the UV region, ...

  17. Conductance of perovskite oxide thin films and interfaces

    NARCIS (Netherlands)

    Mubeen Dildar, Ishrat

    2013-01-01

    This thesis deals with the properties of doped perovskite manganites in the form of thin films, and with interfaces between insulating perovskites. The first question we investigate has to do with the strong reduction of the metal-insulator (MI) transition temperature when the films are strained.In

  18. WO/sub 3/ thin films for practical electrochromic windows

    International Nuclear Information System (INIS)

    Goldner, R.B.; Wong, K.; Foley, G.; Norton, P.; Wamboldt, L.; Seward, G.; Haas, T.; Chapman, R.

    1986-01-01

    This paper shows that practical spectrally-selective transmittance modulation can be achieved with thin (50-100nm) WO/sub 3/ films, and therefore such films should be useful for fabricating electrochromic windows. The transmittance and reflectance modulation results are compared with theoretical predictions. The results indicate an excess intraband absorptance, which is attributed to free electron scattering arising from extended defects

  19. Magnetic hysteresis measurements of thin films under isotropic stress.

    Science.gov (United States)

    Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

    2000-10-01

    Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

  20. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken