Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

Science.gov (United States)

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Coercivity scaling in antidot lattices in Fe, Ni, and NiFe thin films

Energy Technology Data Exchange (ETDEWEB)

Gräfe, Joachim, E-mail: graefe@is.mpg.de; Schütz, Gisela; Goering, Eberhard J., E-mail: goering@is.mpg.de

2016-12-01

Antidot lattices can be used to artificially engineer magnetic properties in thin films, however, a conclusive model that describes the coercivity enhancement in this class of magnetic nano-structures has so far not been found. We prepared Fe, Ni, and NiFe thin films and patterned each with 21 square antidot lattices with different geometric parameters and measured their hysteretic behavior. On the basis of this extensive dataset we are able to provide a model that can describe both the coercivity scaling over a wide range of geometric lattice parameters and the influence of different materials.

Direct growth of superconducting NdFeAs(O,F) thin films by MBE

Energy Technology Data Exchange (ETDEWEB)

Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-11-15

Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

Directory of Open Access Journals (Sweden)

Pei-Chung Lin

2016-08-01

Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

International Nuclear Information System (INIS)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita

2016-01-01

In this work, Pd:NiFe 2 O 4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe 2 O 4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe 2 O 4 nanoparticle thin film were fabricated. • Pd incorporation in NiFe 2 O 4 matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe 2 O 4 thin film sensor displays excellent long–term stability.

Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2014-01-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

L10 phase transition in FePt thin films via direct interface reaction

International Nuclear Information System (INIS)

Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi; Liu Baoting; Guo Jianxin

2008-01-01

Lowering the L1 0 ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1 0 ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1 0 ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO 2 substrates. The accelerated L1 0 ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1 0 ordering process of the FePt films.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

2016-01-01

We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

Metal-semiconductor transition materials. FeS and VO2 thin films by RF reactive sputtering

International Nuclear Information System (INIS)

Fu, Ganhua

2007-06-01

In the present work, two MST systems, FeS and VO 2 thin films were investigated. Iron sulfide thin films over a range of composition were prepared by reactive sputtering. The influence of the substrate, sputter power, substrate temperature and stoichiometry on the structure and MST of iron sulfide films was investigated. Iron sulfide films deposited at different temperatures show temperature dependent structure and MST. FeS films on float glass show (110) and (112) orientations when the substrate temperature is 200 and 500 C, respectively. The transition temperature and width of the hysteresis loop determined from the temperature dependent conductivity curves of iron sulfide films decrease with the substrate temperature. Fe and S excess in FeS films both result in the decrease of the transition temperature and width of the hysteresis loop. The vacuum-annealing affects the MST of FeS films significantly. When FeS films were annealed below the deposition temperature, the transition temperature decreases; otherwise increases. The residual stress plays an important role during the annealing process. The higher the residual stress inside the FeS films is, the higher the transition temperature of FeS films. With the increase of the annealing temperature, the residual stress in FeS films is first released and then enhances, which gives rise first to the decrease and then increase of the transition temperature of FeS films. At high substrate temperatures, the residual stress is higher. In addition, the MST of FeS films was influenced by the ambient aging. With the increase of the aging time, the transition temperature first increases and then decreases. FeS films with different thicknesses were prepared. The correlation between the film thickness (grain size) and the MST switching characteristics of FeS films was established. With the decrease of the grain size, the density of grain boundaries increases, causing the increase of the conductivity of the semiconducting phase

Epitaxial Fe16N2 thin film on nonmagnetic seed layer

Science.gov (United States)

Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

2018-05-01

Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Photoconductivity in BiFeO3 thin films

Science.gov (United States)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

International Nuclear Information System (INIS)

Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

2016-01-01

The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Huang, Yiqin [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zuo, Min; Tao, Lei; Wang, Wei [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China); Bai, Peiwen [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China)

2016-07-01

The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Magneto-optical properties of BiFeO{sub 3} thin films using surface plasmon resonance technique

Energy Technology Data Exchange (ETDEWEB)

Paliwal, Ayushi; Sharma, Anjali [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2014-09-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO{sub 3} thin films. BiFeO{sub 3} thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO{sub 3}/air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO{sub 3} thin films. The SPR reflectance curves obtained for prism/Au/BiFeO{sub 3}/air structure were utilized to investigate the optical properties of BiFeO{sub 3} thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO{sub 3} film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO{sub 3} film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO{sub 3} film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T.

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

International Nuclear Information System (INIS)

Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

2014-01-01

Multiferroic Bismuth Ferrite (BiFeO 3 ) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO 3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO 3 and Fe 2 O 3 to pure BiFeO 3 phase and, subsequently, to a mixture of BiFeO 3 and Bi 2 O 3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO 3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe 2 O 3 ). Deterioration in ferroic properties of BiFeO 3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO 3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm 2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO 3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO 3 thin films exhibiting the improved multiferroic properties.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

Magnetic properties and microstructure of low ordering temperature L10 FePt thin films

International Nuclear Information System (INIS)

Sun, A.C.; Kuo, P.C.; Chen, S.C.; Chou, C.Y.; Huang, H.L.; Hsu, J.H.

2004-01-01

Polycrystalline Fe 52 Pt 48 alloy thin films were prepared by dc magnetron sputtering on preheated natural-oxidized silicon wafer substrates. The film thickness was varied from 10 to 100 nm. The as-deposited film was encapsulated in a quartz tube and postannealed in vacuum at various temperatures for 1 h, then furnace cooled. It is found that the ordering temperature from as-deposited soft magnetic fcc FePt phase to hard magnetic fct L1 0 FePt phase could be reduced to about 350 deg. C by preheating substrate and furnace cooling treatment. The magnetic properties measurements indicated that the in-plane coercivity of the films was increased rapidly as annealing temperature is increased from 300 to 400 deg. C, but it decreased when the annealing temperature is higher than 400 deg. C. X-ray diffraction analysis shown that the as-deposited FePt thin film was a disorder fcc FePt phase. The magnetic measurement indicated that the transformation of disorder fcc FePt to fct L1 0 FePt phase was started at about 350 deg. C, which is consistent with the analysis of x-ray diffraction patterns. From scanning electron microscopy observation and selected area energy disperse spectrum analysis, the distributions of Fe and Pt elements in the films became nonuniform when the annealing temperature was higher than 500 deg. C due to the formation of the Fe 3 Pt phase. After annealing at 400 deg. C, the in plane coercivity of Fe 52 Pt 48 thin film with film thickness of 100 nm is 10 kOe, M s is 580 emu/cm3, and grain size is about 12 nm

Metal-semiconductor transition materials. FeS and VO{sub 2} thin films by RF reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Fu Ganhua

2007-06-15

In the present work, two MST systems, FeS and VO{sub 2} thin films were investigated. Iron sulfide thin films over a range of composition were prepared by reactive sputtering. The influence of the substrate, sputter power, substrate temperature and stoichiometry on the structure and MST of iron sulfide films was investigated. Iron sulfide films deposited at different temperatures show temperature dependent structure and MST. FeS films on float glass show (110) and (112) orientations when the substrate temperature is 200 and 500 C, respectively. The transition temperature and width of the hysteresis loop determined from the temperature dependent conductivity curves of iron sulfide films decrease with the substrate temperature. Fe and S excess in FeS films both result in the decrease of the transition temperature and width of the hysteresis loop. The vacuum-annealing affects the MST of FeS films significantly. When FeS films were annealed below the deposition temperature, the transition temperature decreases; otherwise increases. The residual stress plays an important role during the annealing process. The higher the residual stress inside the FeS films is, the higher the transition temperature of FeS films. With the increase of the annealing temperature, the residual stress in FeS films is first released and then enhances, which gives rise first to the decrease and then increase of the transition temperature of FeS films. At high substrate temperatures, the residual stress is higher. In addition, the MST of FeS films was influenced by the ambient aging. With the increase of the aging time, the transition temperature first increases and then decreases. FeS films with different thicknesses were prepared. The correlation between the film thickness (grain size) and the MST switching characteristics of FeS films was established. With the decrease of the grain size, the density of grain boundaries increases, causing the increase of the conductivity of the semiconducting

Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

Science.gov (United States)

Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

2016-07-01

The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB.

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

Science.gov (United States)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Soft magnetic properties and damping parameter of (FeCo-Al alloy thin films

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Isao Kanada

2017-05-01

Full Text Available For high frequency device applications, a systematic study of the soft magnetic properties and magnetization dynamics of (FeCo-Al alloy thin films has been carried out. A low effective damping parameter αeff of 0.002 and a high saturation magnetization of about 1,800 emu/cc are obtained at y=0.2∼0.3 for (Fe1-yCoy98Al2 alloy thin films deposited onto fused silica and MgO(100 at an ambient temperature during deposition. Those films are of the bcc structure with the orientation normal to the film plane. They possess a columnar structure, grown along the film normal. The column width is found to be about 20 nm for y=0.25. It is concluded that the (FeCo-Al thin films with a damping parameter as low as 0.002 and high saturation magnetization of about 1,800 emu/cc have been successfully fabricated, and that they are potential for future high frequency device applications.

Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

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Hao-Min Xu

2016-11-01

Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Science.gov (United States)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Thin films of NdFeB deposited by PLD technique

International Nuclear Information System (INIS)

Constantinescu, C.; Scarisoreanu, N.; Moldovan, A.; Dinescu, M.; Petrescu, L.; Epureanu, G.

2007-01-01

Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization

Thin films of NdFeB deposited by PLD technique

Energy Technology Data Exchange (ETDEWEB)

Constantinescu, C. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Scarisoreanu, N. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Moldovan, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania)]. E-mail: dinescum@ifin.nipne.ro; Petrescu, L. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania); Epureanu, G. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania)

2007-07-31

Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization.

Artificially controlled stress anisotropy and magnetic properties of FeTaN thin films

International Nuclear Information System (INIS)

Deng, H.; Jarratt, J.D.; Minor, M.K.; Barnard, J.A.

1997-01-01

This article presents a new method of investigating internal stress effects on thin film magnetic properties, in this case magnetically soft FeTaN sputtered films. The FeTaN films were deposited on a series of oxidized silicon (111) substrates prestressed to different degrees. During sputtering all the deposition conditions were kept exactly the same for all the samples. However, anisotropic stresses with different amplitudes are systematically introduced into the films when the prestressed wafers were released. In this way, FeTaN films with compressive stress varying from 80 to 608 MPa are produced. We found that the saturation magnetostriction (λ s ), anisotropy field (H k ), initial permeability (μ i ) as well as easy axis orientation of FeTaN thin films are strongly affected by the induced stress anisotropy. A stress ratio concept is proposed as a measure of the degree of the stress anisotropy. Models for easy-hard axis switching induced by stress for magnetic films with positive magnetostriction are discussed. copyright 1997 American Institute of Physics

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

International Nuclear Information System (INIS)

Ding, Y.F.; Chen, J.S.; Liu, E.; Lim, B.C.; Hu, J.F.; Liu, B.

2009-01-01

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 deg. C . When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 deg. C . The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 deg. C to 350 deg. C ), though the ordering degree and coercivity of the films increased with increased substrate temperature

Investigation of the magnetic properties of electrodeposited NiFe thin films

International Nuclear Information System (INIS)

Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

2002-01-01

Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

Directory of Open Access Journals (Sweden)

Chun-Huei Tsau

2015-01-01

Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

Nanocrystalline Pd:NiFe{sub 2}O{sub 4} thin films: A selective ethanol gas sensor

Energy Technology Data Exchange (ETDEWEB)

Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita, E-mail: smb.agc@gmail.com

2016-10-15

In this work, Pd:NiFe{sub 2}O{sub 4} thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe{sub 2}O{sub 4} thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe{sub 2}O{sub 4} nanoparticle thin film were fabricated. • Pd incorporation in NiFe{sub 2}O{sub 4} matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe{sub 2}O{sub 4} thin film sensor displays excellent long–term stability.

Magnetic domains in epitaxial (100) Fe thin films

International Nuclear Information System (INIS)

Florczak, J.M.; Dahlberg, E.D.; Ryan, P.J.; White, R.M.; Kuznia, J.N.; Wowchak, A.M.; Cohen, P.I.

1989-01-01

This paper discusses the investigation of the domain patterns of thin Fe films (10 nm) grown on In x Ga 1 - x As (0.09< x<0.25)/GaAs substrates by use of Kerr microscopy. For this investigation, two types of InGaAs buffer layers were prepared. One consisted of a single, thick InGaAs layer and the second composed of an InGaAs strained layer superlattice. Both were grown on (100) GaAs substrates. The study showed that many of the domain walls were approximately parallel to the easy axis of Fe for those films grown on the low x alloy, e.g. x = 0.1, InGaAs buffer layers

L1{sub 0} phase transition in FePt thin films via direct interface reaction

Energy Technology Data Exchange (ETDEWEB)

Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Liu Baoting; Guo Jianxin [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

2008-12-07

Lowering the L1{sub 0} ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1{sub 0} ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1{sub 0} ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO{sub 2} substrates. The accelerated L1{sub 0} ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1{sub 0} ordering process of the FePt films.

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

International Nuclear Information System (INIS)

Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

2012-01-01

High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

Chemical synthesis of Fe{sub 2}O{sub 3} thin films for supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Kulal, P.M.; Dubal, D.P.; Lokhande, C.D. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Fulari, V.J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

2011-02-03

Research highlights: > Simple chemical synthesis of Fe{sub 2}O{sub 3}. > Formation of amorphous and hydrous Fe{sub 2}O{sub 3}. > Potential candidate for supercapacitors. - Abstract: Fe{sub 2}O{sub 3} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, scanning electron microscopy (SEM), wettability test and optical absorption studies. The XRD pattern showed that the Fe{sub 2}O{sub 3} films exhibit amorphous in nature. Formation of iron oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.2 eV. Fe{sub 2}O{sub 3} film surface showed superhydrophilic nature with water contact angle less than 10{sup o}. The supercapacitive properties of Fe{sub 2}O{sub 3} thin film investigated in 1 M NaOH electrolyte showed supercapacitance of 178 F g{sup -1} at scan rate 5 mV/s.

First-principles-based study of transport properties of Fe thin films on Cu surfaces

Energy Technology Data Exchange (ETDEWEB)

Kishi, Tomoya [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Kasai, Hideaki [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Nakanishi, Hiroshi [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Dino, Wilson Agerico [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Komori, Fumio [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8587 (Japan)

2004-12-08

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties.

First-principles-based study of transport properties of Fe thin films on Cu surfaces

International Nuclear Information System (INIS)

Kishi, Tomoya; Kasai, Hideaki; Nakanishi, Hiroshi; Dino, Wilson Agerico; Komori, Fumio

2004-01-01

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Ferromagnetic resonance linewidth and two-magnon scattering in Fe1-xGdx thin films

Directory of Open Access Journals (Sweden)

Sheng Jiang

2017-05-01

Full Text Available Magnetization dynamics of Fe1-xGdx thin films (0 ≤ x ≤ 22% has been investigated by ferromagnetic resonance (FMR. Out-of-plane magnetic field orientation dependence of resonance field and linewidth has been measured. Resonance field and FMR linewidth have been fitted by the free energy of our system and Landau-Lifshitz-Gilbert (LLG equation. It is found that FMR linewidth contains huge extrinsic components including two-magnon scattering contribution and inhomogeneous broadening for FeGd alloy thin films. In addition, the intrinsic linewidth and real damping constants have been obtained by extracting the extrinsic linewidth. The damping constant enhanced from 0.011 to 0.038 as Gd dopants increase from 0 to 22% which originates from the enhancement of L-S coupling in FeGd thin films. Besides, gyromagnetic ratio, Landé factor g and magnetic anisotropy of our films have also been determined.

TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

International Nuclear Information System (INIS)

Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

2011-01-01

We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Gupta, Surbhi; Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi (India); Tomar, Monika [Department of Physics, Miranda Housea, University of Delhi, Delhi (India); James, A. R. [Defence Metallurgical Research Laboratory, Hyderabad (India); Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar [Department of Electrical and Computer Engineering, College of Engineering, University of Texas at SanAntonio, San Antonio 78249 (United States)

2014-06-21

Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

Molecular and electronic structure of thin films of protoporphyrin(IX)Fe(III)Cl

Science.gov (United States)

Snyder, Shelly R.; White, Henry S.

1991-11-01

Electrochemical, scanning tunneling microscopy (STM), and tunneling spectroscopy studies of the molecular and electronic properties of thin films of protoporphyrin(IX)Fe(III)Cl (abbreviated as PP(IX)Fe(III)Cl) on highly oriented pyrolytic graphite (HOPG) electrodes are reported. PP(IX)Fe(III)Cl films are prepared by two different methods: (1) adsorption, yielding an electrochemically-active film, and (2) irreversible electrooxidative polymerization, yielding an electrochemically-inactive film. STM images, in conjunction with electro-chemical results, indicate that adsorption of PP(IX)Fe(III)Cl from aqueous solutions onto freshly cleaved HOPG results in a film comprised of molecular aggregates. In contrast, films prepared by irreversible electrooxidative polymerization of PP(IX)Fe(III)Cl have a denser, highly structured morphology, including what appear to be small pinholes (approx. 50A diameter) in an otherwise continuous film.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

Science.gov (United States)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications

International Nuclear Information System (INIS)

Liu Hongfei; Chi Dongzhi

2012-01-01

The authors report on the fabrication of FeS 2 (pyrite) thin films by sulfurizing Fe 3 S 4 that were deposited by direct current magnetron sputtering at room temperature. Under the selected sputtering conditions, Fe 3 S 4 nanocrystal films are obtained and the nanocrystals tend to locally cluster and closely pack into ricelike nanoparticles with an increase in film thickness. Meanwhile, the film tends to crack when the film thickness is increased over ∼1.3 μm. The film cracking can be effectively suppressed by an introduction of a 3-nm Cu intermediate layer prior to Fe 3 S 4 deposition. However, an introduction of a 3-nm Al intermediate layer tends to enhance the film cracking. By post-growth thermal sulfurization of the Fe 3 S 4 thin films in a tube-furnace, FeS 2 with high phase purity, as determined by using x ray diffraction, is obtained. Optical absorption spectroscopy was employed to characterize the resultant FeS 2 thin films, which revealed two absorption edges at 0.9 and 1.2 eV, respectively. These two absorption edges are assigned to the direct bandgap (0.9 eV) and the indirect allowed transitions (1.2 eV) of FeS 2 , respectively.

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

International Nuclear Information System (INIS)

Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

2002-01-01

The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

EXAFS study of the stability of amorphous TbFe thin films

International Nuclear Information System (INIS)

Samant, M.G.; Marinero, E.E.; Robinson, C.; Cargill, G.S.

1989-01-01

This paper discusses the measurement of the local atomic structure of Fe in Au doped Tb-Fe thin film alloys by the use of EXAFS. The as deposited sample shows structural features which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure

Effect of tungsten (W) on structural and magnetic properties of electroplated NiFe thin films for MEMS applications

Science.gov (United States)

Kannan, R.; Devaki, P.; Premkumar, P. S.; Selvambikai, M.

2018-04-01

Electrodeposition of nanocrystalline NiFe and NiFeW thin films were carried out from ammonium citrate bath at a constant current density and controlled pH of 8 by varying the bath temperature from 40 °C to 70 °C. The surface morphology and chemical composition of the electrodeposited NiFe and NiFeW soft magnetic thin films were studied by using SEM and EDAX. The SEM micrographs of the films coated at higher electrodeposited bath temperature have no micro cracks and also the films have more uniform surface morphology. The existence of crystalline nature of the coated films were analysed by XRD. The presence of predominant peaks in x-ray diffraction pattern (compared with JCPDS data) reveal that the average crystalline size was in the order of few tens of nano meters. The magnetic properties such as coercivity, saturation magnetization and magnetic flux density have been calculated from vibrating sample magnetometer analysis. The VSM result shows that the NiFeW thin film synthesised at 70 °C exhibit the lower coercivity with higher saturation magnetization. The hardness and adhesion of the electroplated films have been investigated. Reasons for variation in magnetic properties and structural characteristics are also discussed. The electroplated NiFe and NiFeW thin films can be used for Micro Electro Mechanical System (MEMS) applications due to their excellent soft magnetic behaviour.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Multiferroic BiFeO{sub 3} thin films: Structural and magnetic characterization

Energy Technology Data Exchange (ETDEWEB)

Ali, Z. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt); Atta, A. [National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo (Egypt); Abbas, Y. [Physics Department, Faculty of Science, Suez Canal University, Ismailia (Egypt); Sedeek, K.; Adam, A.; Abdeltwab, E. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

2015-02-27

BiFeO{sub 3} (BFO) film has been deposited on indium tin oxide (ITO) substrate by a simple sol–gel spin-coating technique. The crystal phase composition, surface morphology, topography and magnetization measurements of the BFO thin film were investigated using grazing incidence X-ray diffraction (GIXRD), scanning electronic microscope (SEM), atomic force microscope and vibrating sample magnetometer, respectively. GIXRD analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section SEM results indicated that compact and homogeneous BFO thin film was deposited on ITO with a thickness of about 180 nm. Moreover, most of A and E-symmetry normal modes of R3c BFO were assigned by Raman spectroscopy. We report here that the pure phase BFO film shows ferromagnetism at room temperature with remarkably high saturation magnetization of 63 kA m{sup −1}. Our results are discussed mainly in correlation with the condition of processing technique and destruction of the spiral spin cycloid at interface layers and grain boundaries. - Highlights: • Multiferroic BiFeO{sub 3} (BFO) thin film was prepared by sol–gel spin-coating method. • BFO film w asdeposited on indium tin oxide substrate with a thickness of 180 nm. • The film exhibits pure rhombohedral perovskite structure. • High saturation magnetization was recorded for our film at room temperature.

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

NARCIS (Netherlands)

Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

2008-01-01

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

Science.gov (United States)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films

International Nuclear Information System (INIS)

Kande, Dhishan; Laughlin, David; Zhu Jiangang

2010-01-01

B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording (HAMR) media. Studies have shown that as we decrease the thickness of the FeRh films, the B2 phase is no longer AFM even below 350 K and there is a thickness dependant FM stabilization of the B2 phase. It was also proved that slightly Rh-richer compositions (>50 at. % Rh) were more preferable to stabilize the AFM phase. The current study focuses on growing highly ordered FeRh films by alternate layer rf sputtering of thin layers of iron and rhodium onto a heated substrate. It has been shown that films with rhodium content beyond 55 at. % contain a disordered bcc FM phase which gives rise to residual moment at room temperature even for thicker films.

High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C/Fe Trilayer Thin Films

Directory of Open Access Journals (Sweden)

Anabil Gayen

2013-01-01

Full Text Available We report the investigation of temperature dependent magnetic properties of FePt and FePt(30/M(Cu,C/Fe(5 trilayer thin films prepared by using magnetron sputtering technique at ambient temperature and postannealed at different temperatures. L10 ordering, hard magnetic properties, and thermal stability of FePt films are improved with increasing postannealing temperature. In FePt/M/Fe trilayer, the formation of interlayer exchange coupling between magnetic layers depends on interlayer materials and interface morphology. In FePt/C/Fe trilayer, when the C interlayer thickness was about 0.5 nm, a strong interlayer exchange coupling between hard and soft layers was achieved, and saturation magnetization was enhanced considerably after using interlayer exchange coupling with Fe. In addition, incoherent magnetization reversal process observed in FePt/Fe films changes into coherent switching process in FePt/C/Fe films giving rise to a single hysteresis loop. High temperature magnetic studies up to 573 K reveal that the effective reduction in the coercivity decreases largely from 34 Oe/K for FePt/Fe film to 13 Oe/K for FePt/C(0.5/Fe film demonstrating that the interlayer exchange coupling seems to be a promising approach to improve the stability of hard magnetic properties at high temperatures, which is suitable for high-performance magnets and thermally assisted magnetic recording media.

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

International Nuclear Information System (INIS)

Hendren, W R; Atkinson, R; Pollard, R J; Salter, I W; Wright, C D; Clegg, W W; Jenkins, D F L

2003-01-01

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different

Optical and magneto-optical characterization of TbFeCo and GdFeCo thin films for high-density recording

Energy Technology Data Exchange (ETDEWEB)

Hendren, W R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Atkinson, R [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Pollard, R J [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Salter, I W [Department of Pure and Applied Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Wright, C D [School of Engineering and Computer Science, University of Exeter, Exeter EX4 4QF (United Kingdom); Clegg, W W [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom); Jenkins, D F L [CRIST, University of Plymouth, Plymouth PL4 8AA (United Kingdom)

2003-03-12

Thin, optically semi-infinite films of amorphous TbFeCo and GdFeCo, suitable for magneto-optical recording, have been deposited by DC magnetron sputtering onto glass. Ellipsometric techniques have been used to determine the complex refractive index and complex magneto-optical parameter of the films in the wavelength range 400-900 nm, thus characterizing the materials. A review of the literature is presented and shows that the results for the TbFeCo films compare favourably with published results obtained from measurements conducted in situ, with the films protected with ZnS barrier layers. It is found that GdFeCo and TbFeCo are optically very similar, but magneto-optically the materials are quite different.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi; Schwingenschlö gl, Udo

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order

Dynamic magnetization of NiZn ferrite doped FeSiAl thin films fabricated by oblique sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore 117411 (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

2017-06-15

Highlights: • We prepared NiZn ferrite doped FeSiAl-based thin films using oblique deposition technique. • The magnetic properties of FeSiAl-based thin films were systematically studied. • Two ferromagnetic resonance peaks were observed in the permeability spectra. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The thermal stability of properties we studied was relatively good. - Abstract: In this study, we comprehensively investigate the dynamic magnetic properties of FeSiAl-NiZnFeO thin films prepared by the oblique deposition method via a shorted microstrip perturbation technique. For the films with higher oblique angle and NiZn ferrite doping amount, there are two ferromagnetic resonance peaks observed in the permeability spectra, and both of the two peaks originate from FeSiAl. Furthermore, the magnetic anisotropy field H{sub K} of the ferromagnetic resonance peak at higher frequency is enhanced with increasing doping amount, which is interpreted in terms of the contribution of reinforced stress-induced anisotropy and shape anisotropy brought about by doping elements and oblique sputtering method. In addition, the thermal stability of the ferromagnetic resonance frequency f{sub FMR} of FeSiAl-NiZnFeO films with oblique angles of 35° and 45° with respect to temperature ranging from 300 K to 420 K is deteriorated with increasing ferrite doping amount, which is mainly ascribed to the influence of pair-ordering anisotropy and/or the reduction of the FeSiAl grain size.

Ab Initio Guided Low Temperature Synthesis Strategy for Smooth Face–Centred Cubic FeMn Thin Films

Directory of Open Access Journals (Sweden)

Friederike Herrig

2018-05-01

Full Text Available The sputter deposition of FeMn thin films with thicknesses in the range of hundred nanometres and beyond requires relatively high growth temperatures for the formation of the face-centred cubic (fcc phase, which results in high thin film roughness. A low temperature synthesis strategy, based on local epitaxial growth of a 100 nm thick fcc FeMn film as well as a Cu nucleation layer on an α-Al2O3 substrate at 160 °C, enables roughness values (Ra as low as ~0.6 nm, which is in the same order of magnitude as the pristine substrate (~0.1 nm. The synthesis strategy is guided by ab initio calculations, indicating very strong interfacial bonding of the Cu nucleation layer to an α-Al2O3 substrate (work of separation 5.48 J/m²—which can be understood based on the high Cu coordination at the interface—and between fcc FeMn and Cu (3.45 J/m². Accompanied by small lattice misfits between these structures, the strong interfacial bonding is proposed to enable the local epitaxial growth of a smooth fcc FeMn thin film. Based on the here introduced synthesis strategy, the implementation of fcc FeMn based thin film model systems for materials with interface dominated properties such as FeMn steels containing κ-carbide precipitates or secondary phases appears meaningful.

Magneto-thermoelectric effects in NiFe thin films

Energy Technology Data Exchange (ETDEWEB)

Schmid, Maximilian

2015-11-01

In this thesis magneto-thermoelectric effects are investigated in a systematic way to separate the transverse spin Seebeck effect from other parasitic effects like the anomalous Nernst effect. In contrast to the first studies found in the literature, in NiFe thin films a contribution of the transverse spin Seebeck effect can be excluded. This surprising outcome was crosschecked in a variety of different sample layouts and collaborations with other universities to ensure the validity of these results. In general, this thesis solves a long time discussion about the existence of the transverse spin Seebeck effect in NiFe films and supports the importance of control measurements for the scientific community. Even if such ''negative'' results may not be the award winning ones, new discoveries should be treated with constructive criticism and be checked carefully by the scientific community.

AES study of the reaction between a thin Fe-film and β-SiC (100) surface

International Nuclear Information System (INIS)

Mizokawa, Yusuke; Nakanishi, Shigemitsu; Miyase, Sunao

1989-01-01

The solid state reaction between thin Fe-films and β-SiC(100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe 3 C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 A-Fe-film/SiC below 540degC, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640degC, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080degC, the free-Si segregats at the surface and formed Si-Si bonds, as well as the Si-C bonds consuming the surface graphite phase. (author)

Ordering phenomena in FeCo-films and Fe/Cr-multilayers: an X-ray and neutron scattering study

Energy Technology Data Exchange (ETDEWEB)

Nickel, B.

2001-07-01

The following topics are covered: critical phenomena in thin films, critical adsorption, finite size scaling, FeCo Ising model, kinematical scattering theory for thin films, FeCo thin films, growth and characterisation of single crystal FeCo thin films, X-ray study of ordering in FeCo films, antiferromagnetic coupling in Fe/Cr multilayers, neutron scattering on Fe/Cr multilayers (WL)

Formation dynamics of FeN thin films on Cu(100)

KAUST Repository

Heryadi, Dodi

2012-01-01

To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

International Nuclear Information System (INIS)

Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

2016-01-01

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2014-10-15

Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

Growth of Fe2O3 thin films by atomic layer deposition

International Nuclear Information System (INIS)

Lie, M.; Fjellvag, H.; Kjekshus, A.

2005-01-01

Thin films of α-Fe 2 O 3 (α-Al 2 O 3 -type crystal structure) and γ-Fe 2 O 3 (defect-spinel-type crystal structure) have been grown by the atomic layer deposition (ALD) technique with Fe(thd) 3 (iron derivative of Hthd = 2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. It has been shown that an ALD window exists between 160 and 210 deg. C. The films have been characterized by various techniques and are shown to comprise (001)-oriented columns of α-Fe 2 O 3 with no in-plane orientation when grown on soda-lime-glass and Si(100) substrates. Good quality films have been made with thicknesses ranging from 10 to 130 nm. Films grown on α-Al 2 O 3 (001) and MgO(100) substrates have the α-Fe 2 O 3 and γ-Fe 2 O 3 crystal structure, respectively, and consist of highly oriented columns with in-plane orientations matching those of the substrates

Growth and Characterization of Magnetoelectric Fe2TeO6 Thin Films

Science.gov (United States)

Wang, Junlei; Colon Santana, Juan; Wu, Ning; Dowben, Peter; Binek, Christian

2013-03-01

Voltage-controlled spintronics is of vital importance in information technology where power consumption and Joule heating restrict progress through scaling. Motivated by spintronic concepts and specifically by device applications utilizing electrically controlled interface or boundary magnetization (BM) in magnetic thin film heterostructures, we report on growth, structural, magnetic and magnetoelectric (ME) characterization of the antiferromagnet Fe2TeO6. Magnetometry of synthesized Fe2TeO6 powder, in combination with ME susceptibility data reveals 3D Heisenberg criticality in striking similarity to the archetypical ME chromia. X-ray diffraction shows (110) texture of the PLD grown films. Measurements of the magnetic susceptibility of the latter confirm in-plane magnetic anisotropy. X-ray photoemission spectroscopy indicates a Te-O terminated (110) surface. We interpret it in terms of surface reconstruction. Measurements of X-ray magnetic circular dichroism combined with photoemission electron microscopy support the presence of electrically controllable BM in the PLD-grown Fe2TeO6 thin film. We acknowledge financial support by NSF-MRSEC & Nanoelectronics Research Initiative.

Epitaxial growth and characterization of CoO/Fe(001) thin film layered structures

International Nuclear Information System (INIS)

Brambilla, A.; Sessi, P.; Cantoni, M.; Duo, L.; Finazzi, M.; Ciccacci, F.

2008-01-01

By means of X-ray photoemission spectroscopy and low energy electron diffraction, we show that it is possible to grow good quality thin epitaxial CoO films on Fe(001) substrates, through deposition in oxygen atmosphere. In particular, the composition and the structure of CoO(001)/Fe(001) bilayer systems and Fe(001)/CoO(001)/Fe(001) trilayer systems have been investigated by monitoring the evolution of the chemical interactions at the interfaces as a function of CoO thickness and growth temperature. We observe the presence of Fe oxides at the CoO/Fe interface and of a thin layer of metallic cobalt at the upper Fe/CoO interface of trilayer systems

Thin film growth of CaFe2As2 by molecular beam epitaxy

International Nuclear Information System (INIS)

Hatano, T; Fujimoto, R; Nakamura, I; Mori, Y; Ikuta, H; Kawaguchi, T; Harada, S; Ujihara, T

2016-01-01

Film growth of CaFe 2 As 2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe 2 As 2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch. (paper)

Thin film growth of CaFe2As2 by molecular beam epitaxy

Science.gov (United States)

Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

2016-01-01

Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

International Nuclear Information System (INIS)

Yu, Ying; Zhan, Qingfeng; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei; Wei, Jinwu; Wang, Jianbo; Xie, Shuhong

2015-01-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

Science.gov (United States)

Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

2015-04-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

Effect of Ti seed and spacer layers on structure and magnetic properties of FeNi thin films and FeNi-based multilayers

Energy Technology Data Exchange (ETDEWEB)

Svalov, A.V., E-mail: andrey.svalov@ehu.es [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Kurlyandskaya, G.V. [Departamento de Electricidad y Electrónica, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain); Department of Magnetism and Magnetic Nanomaterials, Ural Federal University, 620002 Ekaterinburg (Russian Federation)

2014-10-15

Highlights: • Fe{sub 19}Ni{sub 81} films and FeNi-based multilayers were prepared by magnetron sputtering. • The samples were deposited onto glass substrates at room temperature. • Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. • The thick Cu seed increases the coercive force of the magnetic layer. • The thin Ti spacer restores the magnetic softness of the Cu/Ti/FeNi multilayers. - Abstract: The microstructure and magnetic properties of sputtered permalloy films and FeNi-based multilayers prepared by magnetron sputtering have been studied. X-ray diffraction measurements indicate that Ti/FeNi films exhibit good (1 1 1) texture and crystallinity. Ti/FeNi bilayers with high crystallographic quality have relatively low resistivity. The Ti seed layer does not influence the magnetic properties of FeNi film in Ti/FeNi bilayers, but the thick Cu seed layer leads to an increase of the coercive force of the magnetic layer. For the FeNi films deposited on thick Cu seed layer, the (0 1 0) and (0 0 2) diffraction peaks of hcp nickel were clearly observed. The thin Ti spacer between Cu and FeNi layers prevents the formation of the nickel phase and restores the magnetic softness of the FeNi layer in the Cu/Ti/FeNi sample. Obtained results can be important for the development of multilayer sensitive elements for giant magnetoimpedance or magnetoresistance detectors.

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

2011-01-01

Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

Analysis of NdFeB thin films prepared by facing target sputtering

International Nuclear Information System (INIS)

Shivalingappa, L.; Mohan, S.; Ghantasala, M.K.; Sood, D.K.

1999-01-01

In this paper, we present the details of our work on the deposition and characterization of NdFeB thin films. These films were prepared using facing target sputtering technique. The silicon(100) substrates were maintained at a substrate temperature of 400 to 600 deg C during deposition. Film structure, composition and magnetic properties are analyzed using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD) techniques. Films deposited below 400 deg C were x-ray amorphous, while the onset of crystallinity was observed with the films deposited at 500 deg C. Typical film composition was Nd:Fe:B = 2.2:12.5:2. Film composition appear to be a function of deposition conditions. Oxygen has been found to be the main impurity in the films. Oxygen content in the film reduced as the substrate temperature is increased

Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

International Nuclear Information System (INIS)

Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

2002-01-01

Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

Magnetic properties and high frequency characteristics of FeCoN thin films

Directory of Open Access Journals (Sweden)

Tae-Jong Hwang

2016-05-01

Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

X-ray magnetic absorption in Fe-Tb amorphous thin films

CERN Document Server

Kim, Chan Wook; Watanabe, Yasuhiro

1999-01-01

In order to investigate the magnetic structure of Fe-Tb amorphous thin films, we have performed magnetic circular dichroism (MCD) measurements by using the circularly polarized X-ray at the Fe K- and the Tb L2,3-edges in Fe sub 8 sub 8 Tb sub 1 sub 2 , Fe sub 8 sub 0 Tb sub 2 sub 0 , and Fe sub 6 sub 2 Tb sub 3 sub 8. In all samples, the spin-dependent absorption effects, DELTA mu t, were observed. Also, elementary information was obtained on the spin polarizations of the p- and the d-projected electrons lying in the unoccupied states near the Fermi levels in the samples.

Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

NARCIS (Netherlands)

Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

2005-01-01

A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (?

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

Science.gov (United States)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

International Nuclear Information System (INIS)

El Amiri, A.; Moubah, R.; Lmai, F.; Abid, M.; Hassanain, N.; Hlil, E.K.; Lassri, H.

2016-01-01

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

El Amiri, A., E-mail: aelamiri@casablanca.ma [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Lmai, F. [LPTA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Abid, M. [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Hassanain, N. [Laboratoire de Physique des Matériaux, Faculté des Sciences, BP 1014 Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco)

2016-01-15

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Formation of β-FeSi 2 thin films by partially ionized vapor deposition

Science.gov (United States)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

Science.gov (United States)

Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

2009-11-09

Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

All-optical measurement of interlayer exchange coupling in Fe/Pt/FePt thin films

Science.gov (United States)

Berk, C.; Ganss, F.; Jaris, M.; Albrecht, M.; Schmidt, H.

2018-01-01

Time Resolved Magneto Optic Kerr Effect spectroscopy was used to all-optically study the dynamics in exchange coupled Fe(10 nm)/Pt(x = 0-5 nm)/FePt (10 nm) thin films. As the Pt spacer decreases, the effective magnetization of the layers is seen to evolve towards the strong coupling limit where the two films can be described by a single effective magnetization. The coupling begins at x = 1.5 nm and reaches a maximum exchange coupling constant of 2.89 erg/cm2 at x = 0 nm. The films are ferromagnetically coupled at all Pt thicknesses in the exchange coupled regime (x ≤ 1.5 nm). A procedure for extracting the interlayer exchange constant by measuring the magnetic precession frequencies at multiple applied fields and angles is outlined. The dynamics are well reproduced using micromagnetic simulations.

A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

CERN Document Server

Myung, N S

2001-01-01

Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

Application-related properties of giant magnetostrictive thin films

International Nuclear Information System (INIS)

Lim, S.H.; Kim, H.J.; Na, S.M.; Suh, S.J.

2002-01-01

In an effort to facilitate the utilization of giant magnetostrictive thin films in microdevices, application-related properties of these thin films, which include induced anisotropy, residual stress and corrosion properties, are investigated. A large induced anisotropy with an energy of 6x10 4 J/m 3 is formed in field-sputtered amorphous Sm-Fe-B thin films, resulting in a large magnetostriction anisotropy. Two components of residual stress, intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film, are identified. The variation of residual stress with fabrication parameter and annealing temperature, and its influence on mechanical bending and magnetic properties are examined. Better corrosion properties are observed in Sm-Fe thin films than in Tb-Fe. Corrosion properties of Tb-Fe thin films, however, are much improved with the introduction of nitrogen to the thin films without deteriorating magnetostrictive properties

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

International Nuclear Information System (INIS)

Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

2013-01-01

Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

2013-03-01

Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

LiFePO_4_−_xN_y thin-film electrodes coated on carbon fiber-modified current collectors for pseudocapacitors

International Nuclear Information System (INIS)

Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Huang, Wei-Chieh

2015-01-01

LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs) under a gas mixture of N_2/Ar/H_2 as electrode materials in pseudocapacitors. The MCFs were fabricated by thermal chemical vapor deposition on stainless steel substrates as current collectors. Various amounts of N_2 were introduced by controlling the flow ratios of N_2 to Ar/H_2. The LiFePO_4_−_xN_y thin films coated on the surfaces of MCFs were observed by field emission scanning electron microscopy. The electrochemical properties of the LiFePO_4_−_xN_y thin films were characterized using cyclic voltammetry and charge–discharge processes. The LiFePO_4_−_xN_y thin-film electrode deposited under the optimal N_2 contents exhibited a high specific capacitance of 722 F/g at 1 A/g. Even at a current of 20 A/g, the electrode delivered a capacitance of 298 F/g. The pseudocapacitors using LiFePO_4_−_xN_y thin-film electrodes showed no significant capacitance fading after 1000 cycles at 1 A/g. The results indicated that nitrogen doping improved the electrochemical performances of LiFePO_4, demonstrating the potential of LiFePO_4_−_xN_y as an active material in pseudocapacitors. - Highlights: • LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs). • MCFs only act as a three-dimensional current collector in this system. • The pseudocapacitor exhibits a high specific capacitance.

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

Influence of Fe(Cr) miscibility on thin film grain size and stress

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xuyang; Kaub, Tyler; Martens, Richard L.; Thompson, Gregory B., E-mail: gthompson@eng.ua.edu

2016-08-01

During the post coalescence portion of thin film deposition, thin film stress is related to the grain size and adatom mobility of the depositing material. Using a Fe(Cr) alloy thin film, the manipulation of the tensile stress for thick films was studied as a function of Cr solute content up to 8 at.%. Solute concentrations up to 4 at.% resulted in an approximate 50% increase in grain size that resulted in a reduction of the tensile stress to be lower than either elemental film. Upon increasing the Cr content, the grain size refined and the tensile stress of the films increased. Atom probe characterization of the grain boundaries confirmed Cr chemical partitioning which refined the grain size and altered the film's texture, both of which contributed to the change in film stress. The use of intrinsic segregation, rather than deposition processing parameters, appears to be another viable option for regulating film stress. - Highlights: • Solute segregation to regulate grain size in controlling film stress • Quantification of Cr interfacial excess as a function of alloy content • Quantification of texture fiber alignment as a function of Cr content.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

2012-01-01

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

Science.gov (United States)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Formation of SmFe5(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

International Nuclear Information System (INIS)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmFe 5 (0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe 5 structure forming an alloy compound of Sm(Fe,Cu) 5 . The Sm(Fe,Cu) 5 film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Characteristics and optical properties of iron ion (Fe{sup 3+})-doped titanium oxide thin films prepared by a sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Wang, M.C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Lin, H.J. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)], E-mail: hjlin@nuu.edu.tw; Yang, T.S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2009-04-03

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations have been prepared on a glass substrate by the sol-gel spin coating process. Characteristics and optical properties of TiO{sub 2} thin films doping of various Fe content were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry. The crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0 to 25.0 wt%. During the Fe{sup 3+} addition to 25.0 wt%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The absorption edge of TiO{sub 2} thin films shifted towards longer wavelengths (i.e. red shifted) from 355 to 415 nm when the Fe{sup 3+}-doped concentration increased from 0 to 25.0 wt%. The values of the refractive index (n), and extinction coefficient (k), decreased with an increasing Fe{sup 3+} content. Moreover, the band-gap energy of TiO{sub 2} thin films also decreased from 3.29 to 2.83 eV with an increase in the Fe{sup 3+} content from 0 to 25.0 wt%.

Vibrational spectroscopy and analytical electron microscopy studies of Fe-V-O and In-V-O thin films

CERN Document Server

Vuk, A S; Drazic, G; Colomban, P

2002-01-01

Orthovanadate (M sup 3 sup + VO sub 4; M= Fe, In) and vanadate (Fe sub 2 V sub 4 O sub 1 sub 3) thin films were prepared using sol-gel synthesis and dip coating deposition. Using analytical electron microscopy (AEM), the chemical composition and the degree of crystallization of the phases present in the thin Fe-V-O films were investigated. TEM samples were prepared in both orientations: parallel (plan view) and perpendicular (cross section) to the substrate. In the first stages of crystallization, when the particle sizes were in the nanometer range, the classical identification of phases using electron diffraction was not possible. Instead of measuring d values, experimentally selected area electron diffraction (SAED) patterns were compared to calculated (simulated) patterns in order to determine the phase composition. The problems of evaluating the ratio of amorphous and crystalline phases in thin films are reported. Results of TEM and XRD as well as IR and Raman spectroscopy showed that the films made at lo...

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Directory of Open Access Journals (Sweden)

Glenda Biasotto

2011-03-01

Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

Effect of anisotropy on anomalous Hall effect in Tb-Fe thin films

International Nuclear Information System (INIS)

Babu, V. Hari; Markandeyulu, G.; Subrahmanyam, A.

2009-01-01

The electrical and Hall resistivities of Tb x Fe 100-x thin films in the temperature range 13-300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films.

Chemically fabricated LiFePO{sub 4} thin film electrode for transparent batteries and electrochromic devices

Energy Technology Data Exchange (ETDEWEB)

Béléké, Alexis B. [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Department of Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 rue University, Montréal, QC H3A 2B2 (Canada); Faure, Cyril [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Röder, Manuel [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Hovington, Pierre [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Posset, Uwe [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Guerfi, Abdelbast [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Zaghib, Karim, E-mail: zaghib.karim@ireq.ca [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada)

2016-12-15

Graphical abstract: Simplified diagram of the novel sol-gel approach of preparation of colorless and transparent LiFePO{sub 4} thin film electrode. - Highlights: • Novel sol-gel synthesis of colorless LFP thin film electrode for transparent Li-ion battery. • High performance of the electrode at various current densities: 5, 10, 20, 50 and 100 μA/cm{sup 2}. • LFP nanoparticles exhibit an excellent electro-activity. • Colorless LFP thin film shows a transmittance above 80% versus FTO. • Higher transmittance of LFP electrode a potential candidate for electrochromic devices. - Abstract: We report a new sol-gel approach of synthesis of LiFePO{sub 4} (LFP) thin film and its application as cathode materials for transparent Li-ion battery in half-cell configuration. LFP thin films were obtained from an alcoholic colloidal suspension of iron acetylacetonate (Fe(AcAc){sub 3}) and aqueous lithium dihydrogen phosphate (LiH{sub 2}PO{sub 4}) deposited on fluorine tin oxide (FTO) glass substrate, followed by heating at 450 °C under nitrogen gas for 1 h. X-ray diffraction (XRD) confirmed that the LFP films have an orthorhombic crystal system with space group Pnma (62). Scanning electron microscopy (SEM) shows spherical LFP nanoparticles aggregates homogenously deposited all over the surface of FTO substrate containing 3-D open pores. The electrochemical behaviors of thin film vs Li/Li{sup +} cell were investigated by cyclic voltammetry and galvanostatic charge-discharge measurements. The cycle life was evaluated by running 1000 cycles of charge-discharge at a current density of 20 μA/cm{sup 2}. The transmission spectra reveal 85–90% of transparency versus FTO as reference, which makes it a potential candidate as a complementary electrode in electrochromic devices (ECDs).

Compositional dependence of Young's moduli for amorphous FeCo-SiO2 thin films

International Nuclear Information System (INIS)

Zhang, L.; Xie, J. L.; Deng, L. J.; Guo, Q.; Zhu, Z. W.; Bi, L.

2011-01-01

Systematic force-deflection measurements with microcantilevers and a combinatorial-deposition method have been used to investigate the Young's moduli of amorphous composite FeCo-SiO 2 thin films as a function of film composition, with high compositional resolution. It is found that the modulus decreases monotonically with increasing FeCo content. Such a trend can be explained in terms of the metalloid atoms having a significant effect on the Young's moduli of metal-metalloid composites, which is associated with the strong chemical interaction between the metalloid and themetallic atoms rather than that between the metallic components themselves. This work provides an efficient and effective method to study the moduli of magnetic thin films over a largecomposition coverage, and to compare the relative magnitudes of moduli for differentcompositions at high compositional resolution.

Magnetic properties of FeNi-based thin film materials with different additives

KAUST Repository

Liang, C.; Gooneratne, C.P.; Wang, Q.X.; Liu, Y.; Gianchandani, Y.; Kosel, Jü rgen

2014-01-01

This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Science.gov (United States)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Reduction of crystallization temperature of the Nd-Fe-B thin films by Cu addition

International Nuclear Information System (INIS)

Ma Yungui; Yang Zheng; Matsumoto, M.; Morisako, A.; Takei, S.

2004-01-01

Nonmagnetic Cu element has been doped into the sputtered Nd-Fe-B thin films. It is found that the introduction of suitable amount of copper atoms could reduce the crystallization temperature of the 2:14:1 phase by near 100 deg. C, compared with that without Cu. For the 15 nm Nd 16 Fe 70.2 Cu 1.8 B 12 film deposited at 340 deg. C, perpendicular coercivity and remanent magnetization ratio of 350 kA/m and 0.96 have been successfully obtained. Cu addition would lead to the grain growth, but the average grain size in the films could be greatly decreased through lowering the deposition temperature. These results are compared with those found in the fabrication of FePtCu films

Epitaxial growth of Fe-based superconductor thin films

Energy Technology Data Exchange (ETDEWEB)

Meyer, Sven; Haenisch, Jens; Holzapfel, Bernhard [Institut fuer Technische Physik, Karlsruher Institut fuer Technologie, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2016-07-01

The Fe-based superconductors (FBS), discovered in 2008, are not only interesting for possible applications due to their large upper critical fields and low anisotropies, but also for basic understanding of unconventional superconductivity. With their properties, they constitute a link between the classic low-T{sub c} superconductors (low anisotropies, low thermal fluctuations, s-wave type symmetry) and the oxocuprates (T{sub c} up to 55 K, large H{sub c2}, unconventional pairing). Their multi-band nature reminds of MgB{sub 2}. We prepare thin films of FBS in the so called 122 family, namely Co- and P-doped BaFe{sub 2}As{sub 2} to investigate application relevant properties, such as critical current density J{sub c}, by pulsed laser deposition using a frequency-tripled Nd:YAG laser (λ = 355 nm). Microstructure and chemical composition will be investigated by XRD, AFM and SEM, and electrical transport using a 14 T PPMS. The results are compared to literature data on films grown at different wavelengths.

Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

Energy Technology Data Exchange (ETDEWEB)

Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

2016-12-30

Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

Study of electronic structure and magnetic properties of epitaxial Co{sub 2}FeAl Heusler Alloy Thin Films

Energy Technology Data Exchange (ETDEWEB)

Soni, S. [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Dalela, S., E-mail: sdphysics@rediffmail.com [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Sharma, S.S. [Department of Physics, Govt. Women Engineering College, Ajmer (India); Liu, E.K.; Wang, W.H.; Wu, G.H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kumar, M. [Department of Physics, Malviya National Institute of Technology, Jaipur-302017 (India); Garg, K.B. [Department of Physics, University of Rajasthan, Jaipur-302004 (India)

2016-07-25

This work reports the magnetic and electronic characterization of plane magnetized buried Heusler Co{sub 2}FeAl nano thin films of different thickness by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements. . The spectra on both Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence, corresponding to a ferromagnetically-aligned moments on Fe and Co atoms conditioning the peculiar characteristics of the Co{sub 2}FeAl Heusler compound (a half-metallic ferromagnet). The detailed knowledge of the related magnetic and electronic properties of these samples over a wide range of thickness of films are indispensable for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications. - Highlights: • Electronic structure and Magnetic Properties of Epitaxial Co{sub 2}FeAl Heusler Films. • X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). • Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence. • Calculated Orbital, Spin and total magnetic moments of Fe and Co for 30 nm Co{sub 2}FeAl thin film. • The total magnetic moment of Fe at L{sub 2,3} edges increases with the thickness of the Co2FeAl films.

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin Films

NARCIS (Netherlands)

Zhang, W.; Jiang, S.; Wong, P.K.J.; Sun, Li; Wang, Y.K.; Wang, Kai; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; van der Laan, G.; Zhai, Y.

2014-01-01

By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd

In-situ investigation of the icosahedral Al-Cu-Fe phase formation in thin films

Energy Technology Data Exchange (ETDEWEB)

Haidara, F., E-mail: fanta.haidara@im2np.fr [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France); Duployer, B. [Universite Paul Sabatier CIRIMAT-LCMIE 2R1, 118, Route de Narbonne, 31062 Toulouse Cedex 09 (France); Mangelinck, D.; Record, M.-C. [IM2NP, UMR 6242 CNRS - Universite Aix-Marseille, Av. Escadrille Normandie-Niemen, Case 142, 13397 Marseille Cedex 20 (France)

2012-09-05

Highlights: Black-Right-Pointing-Pointer We investigated the phase formation of i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} in thin films. Black-Right-Pointing-Pointer We characterized the samples by DSC and in-situ XRD and resistance measurements. Black-Right-Pointing-Pointer The resistivity value for i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} was determined. - Abstract: This work is an investigation of the formation by reactive diffusion at high temperatures of the icosahedral phase, i-Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, in thin films. The samples were prepared by sputtering at room temperature. The elements Al, Cu and Fe were sequentially deposited onto oxidized silicon substrates. The two following stacking sequences, Al/Cu/Fe and Al/Fe/Cu, were investigated. The phase formation was studied using in situ resistivity, in situ X-ray Diffraction and Differential Scanning Calorimetry measurements. Whatever the stacking sequence, the sequences of phase formation evidenced during the heating treatment are similar. However the temperatures of formation for the first phases that are formed are different; they are higher in the case of the Al/Fe/Cu stacking sequence.

Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T. [Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kojima, T.; Mizuguchi, M.; Takanashi, K. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2014-01-28

FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.

Growth, structure and magnetic properties of magnetron sputtered FePt thin films

Energy Technology Data Exchange (ETDEWEB)

Cantelli, Valentina

2010-07-01

The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

Formation of {beta}-FeSi{sub 2} thin films by partially ionized vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of {beta}-FeSi{sub 2} thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of {beta}-FeSi{sub 2} films deposited on Si substrates. It was confirmed that {beta}-FeSi{sub 2} can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of {beta}-FeSi{sub 2} depends strongly on the content and the acceleration energy of ions.

Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films

International Nuclear Information System (INIS)

Nakamura, D.; Akiike, T.; Takahashi, H.; Nabeshima, F.; Imai, Y.; Maeda, A.; Katase, T.; Hiramatsu, H.; Hosono, H.; Komiya, S.; Tsukada, I.

2011-01-01

We investigated the THz conductivity of FeSe 0.5 Te 0.5 and Ba (Fe 2-x Co x )As 2 thin films. We estimated the superconducting gap energy values. We found anomolous conductivity spectrum in the antiferromagnetic phase. The terahertz (THz) conductivity of FeSe 0.5 Te 0.5 ('11'-type) and Co-doped BaFe 2 As 2 ('122'-type) thin films are investigated. For '11'-type, the frequency dependence of the complex conductivity can be understood as that of BCS-type superconductor near the superconducting gap energy, and we estimated the superconducting gap energy to be 0.6 meV. For '122'-type, we estimated the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point.

Magnetic and microstructural properties of thin NdFeB based films and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Bommer, Lars; Goll, Dagmar [Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)

2010-07-01

The magnetic and microstructural properties of NdFeB and NdFeB/Fe thin films and nanostructures are presented. Samples with Cr buffer and protection layer (minimum thickness: d=50 nm) have been produced by ion beam sputtering at elevated temperatures (T{sub s}=700 C) using Al{sub 2}O{sub 3} and MgO(001) single crystal substrates. Films deposited on Al{sub 2}O{sub 3} substrates show c-axis growth in out-of-plane direction down to thicknesses of the NdFeB film of d=10 nm with coercivities up to {mu}{sub 0}H{sub c}=1 T. The texture of films deposited on MgO(001) substrates is less pronounced and films below d=20 nm show no hard magnetic behavior. For comparison, films were deposited at room temperature on Al{sub 2}O{sub 3} and MgO(001) followed by post-annealing in Ar atmosphere (T{sub pa}=525-650 C) leading to coercivities as high as {mu}{sub 0}H{sub c}=1.2 T but with isotropic behavior. By TEM images the grain structure of the NdFeB samples is studied. Bilayers of NdFeB (d=50 nm) and Fe (d=0-20 nm) show fully exchange coupled behavior. From the temperature dependence of the coercivity the microstructural parameters of all samples have been determined. Furthermore NdFeB periodical patterns were produced by means of electron beam lithography with dot sizes of 1000 nm and 500 nm, respectively.

Epitactical FeAl films on sapphire and their magnetic properties; Epitaktische FeAl-Filme auf Saphir und ihre magnetischen Eigenschaften

Energy Technology Data Exchange (ETDEWEB)

Trautvetter, Moritz

2011-05-05

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr{sup +} irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

Synthesis and characterization of multilayered BaTiO3/NiFe2O4 thin films

Directory of Open Access Journals (Sweden)

Branimir Bajac

2013-03-01

Full Text Available Presented research was focused on the fabrication of multiferroic thin film structures, composed of ferrielectric barium titanate perovskite phase and magnetostrictive nickel ferrite spinel phase. The applicability of different, solution based, deposition techniques (film growth from solution, dip coating and spin coating for thefabrication of multilayered BaTiO3 /NiFe2O4 thin films was investigated. It was shown that only spin coating produces films of desired nanostructure, thickness and smooth and crackfree surfaces.

Evidence of Room Temperature Ferromagnetism Due to Oxygen Vacancies in (In1- x Fe x )2O3 Thin Films

Science.gov (United States)

Chakraborty, Deepannita; Munuswamy, Kuppan; Shaik, Kaleemulla; Nasina, Madhusudhana Rao; Dugasani, Sreekantha Reddy; Inturu, Omkaram

2018-03-01

Iron substituted indium oxide (In1- x Fe x )2O3 thin films at x = 0.00, 0.03, 0.05 and 0.07 were coated onto Corning 7059 glass substrates using the electron beam evaporation technique followed by annealing at different temperatures. The prepared thin films were subjected to different characterization techniques to study their structural, optical and magnetic properties. The structural properties of the thin films were studied using x-ray diffractometry (XRD). From the XRD results it was found that the films were crystallized in cubic structure, and no change in crystal structure was observed with annealing temperature. No secondary phases related to iron were observed from the XRD profiles. The chemical composition and surface morphology of the films were examined by field emission scanning electron microscope (FE-SEM) attached with energy dispersive analysis of x-ray (EDAX). The valence state of the elements were studied by x-ray photoelectron spectroscopy (XPS) and found that the indium, iron and oxygen were in In+3, Fe+3 and O-2 states. From the data, the band gap of the (In1- x Fe x )2O3 thin films were calculated and it increased with increase of annealing temperature. The magnetic properties of the films were studied at room temperature by vibrating sample magnetometer (VSM). The films exhibited ferromagnetism at room temperature.

Magnetic studies of Fe-Y compositionally modulated thin films

International Nuclear Information System (INIS)

Badia, F.; Ferrater, C.; Lousa, A.; Martinez, B.; Labarta, A.; Tejada, J.

1990-01-01

Compositionally modulated thin films of Y/Fe have been studied by using SQUID magnetometry. Samples were grown by electron-beam evaporation onto Kapton substrates. In the low applied field regime, the samples show irreversible behavior when they are submitted to ZFC-FC magnetization processes, increasing the irreversibility zone as the thickness of the Fe layers increases. In the high applied magnetic field regime (H≥10 000 Oe), samples show ferromagnetic behavior. The temperature dependence of the saturation magnetization has been studied, and it was found that both spin-wave excitations and Stoner excitations occur at temperatures higher than 40 K, and a marked deviation from the T 3/2 law was noted below 30 K

Formation of SmFe{sub 5}(0001) ordered alloy thin films on Cu(111) single-crystal underlayers

Energy Technology Data Exchange (ETDEWEB)

Yabuhara, Osamu; Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: yabuhara@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

SmFe{sub 5}(0001) single-crystal thin films are prepared by molecular beam epitaxy employing Cu(111) single-crystal underlayers on MgO(111) substrates. The Cu atoms diffuse into the Sm-Fe layer and substitute the Fe sites in SmFe{sub 5} structure forming an alloy compound of Sm(Fe,Cu){sub 5}. The Sm(Fe,Cu){sub 5} film is more Cu enriched with increasing the substrate temperature. The Cu underlayer plays an important role in assisting the formation of the ordered phase.

Structural, mechanical, and magnetic properties of GaFe_3N thin films

International Nuclear Information System (INIS)

Junaid, Muhammad; Music, Denis; Hans, Marcus; Schneider, Jochen M.; Scholz, Tanja; Dronskowski, Richard; Primetzhofer, Daniel

2016-01-01

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe_3N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe_3N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe_3N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

Comparative study on substitution effects in BiFeO{sub 3} thin films fabricated on FTO substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, Xu; Tan, Guoqiang, E-mail: tan3114@163.com; Hao, Hangfei; Ren, Huijun

2013-10-01

Pure BiFeO{sub 3} (BFO), BiFe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BFCO) and Bi{sub 0.90}Gd{sub 0.10}Fe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe{sup 2+} ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (P{sub r}) of 11.2 μC/cm{sup 2} compared with that of 1.4 μC/cm{sup 2} for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giant P{sub r} of 139.6 μC/cm{sup 2} at room temperature.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

Science.gov (United States)

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

Energy Technology Data Exchange (ETDEWEB)

Chiriac, H. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Grigoras, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania); Urse, M. [National Institute of R and D for Technical Physics, 47 Mangeron Blvd., 700050 Iasi (Romania)]. E-mail: urse@phys-iasi.ro

2007-09-15

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H{sub c} of about 1510kA/m and the remanence ratio M{sub r}/M{sub s} of about 0.8.

Influence of the spacer layer on microstructure and magnetic properties of [NdFeB/(NbCu)]xn thin films

International Nuclear Information System (INIS)

Chiriac, H.; Grigoras, M.; Urse, M.

2007-01-01

Some results concerning the influence of the composition and thickness of NbCu spacer layer on the microstructure and magnetic properties of multilayer [NdFeB/(NbCu)]xn films, in view of their utilization for manufacturing the thin film permanent magnets are presented. A comparison between the microstructure and magnetic properties of NdFeB single layer and [NdFeB/(NbCu)]xn multilayer is also presented. The multilayer [NdFeB/(NbCu)]xn thin films with the thickness of the NdFeB layer of 180nm and the thickness of the NbCu spacer layer of 3nm, exhibit good hard magnetic characteristics such as coercive force H c of about 1510kA/m and the remanence ratio M r /M s of about 0.8

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-12-01

For epitaxial films, a critical thickness (t_c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO₃ thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO₃/SrRuO₃/SrTiO₃ substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO₃ film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

Science.gov (United States)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-12-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu 1 - x Fe x O 3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu 1 - x Fe x O 3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr 1 - x La x )(Ru 1 - x Fe x )O 3 . These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu 1 - x Fe x O 3 - δ thin films.

Synthesis of nanocrystalline nickel-zinc ferrite (Ni0.8Zn0.2Fe2O4) thin films by chemical bath deposition method

International Nuclear Information System (INIS)

Pawar, D.K.; Pawar, S.M.; Patil, P.S.; Kolekar, S.S.

2011-01-01

Graphical abstract: Display Omitted Research highlights: → We have successfully synthesized nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films on stainless steel substrates using a low temperature chemical bath deposition method. → The surface morphological study showed the compact flakes like morphology. → The as-deposited thin films are hydrophilic (10 o o ) whereas the annealed thin films are super hydrophilic (θ o ) in nature. → Ni 0.8 Zn 0.2 Fe 2 O 4 thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni 0.8 Zn 0.2 Fe 2 O 4 thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm -1 which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness ∼1.8 μm after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle (θ) of 5 o .The electrochemical supercapacitor study of Ni 0.8 Zn 0.2 Fe 2 O 4 thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm -2 and 19 F g -1 , respectively.

Spectroscopic ellipsometry study of FePt nanoparticle films

Energy Technology Data Exchange (ETDEWEB)

Lee, S.J.; Lo, C.C.H. [Ames Laboratory, Iowa State University, Ames, IA 50011 (United States); Yu, A.C.C. [Sony Corporation, Sendai Technology Center, 3-4-1 Sakuragi, Miyagi 985-0842 (Japan); Fan, M. [School of Materials Science and Technology, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

2006-12-15

The optical properties of a FePt nanoparticle film were investigated using spectroscopic ellipsometry. The FePt nanoparticle film of thickness about 15 nm was prepared by deposition of FePt nanoparticles directly on a Si substrate. The nanoparticle film was annealed at 600 C in vacuum for two hours before the measurements. The optical properties of the FePt nanoparticle film showed distinctively different spectra from those obtained from the bulk and thin film FePt samples, in particular in the low photon energy range (below 3.5 eV) where the nanoparticle film exhibited a relatively flat refractive index and a substantially lower extinction coefficient than the bulk and epitaxial thin film samples. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

International Nuclear Information System (INIS)

Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

2016-01-01

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)] 2 /FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T A =200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T A ≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T A =300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T A and temperature. A large reduction in coercivity (H C ) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H C (T), i.e., a broad minimum in H C (T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H C (T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T C ) with T A (x). The multilayer films annealed at 200 °C exhibit low value of T C with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T C with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces. - Highlights: • Preparation and

Improving the surface structure of high quality Sr{sub 2}FeMoO{sub 6} thin films for multilayer structures

Energy Technology Data Exchange (ETDEWEB)

Angervo, I., E-mail: ijange@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Saloaro, M. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); Tikkanen, J. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Huhtinen, H.; Paturi, P. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland)

2017-02-28

Highlights: • The effects of PLD laser fluence and deposition temperature are investigated on SFMO thin films. • We focus on improving the surface structure of the SFMO thin films. • Both the surface structure and the Curie temperature can be improved by fabricating the films at 900 °C. - Abstract: Two sets of Sr{sub 2}FeMoO{sub 6} thin films were prepared with pulsed laser deposition and the effect of the laser fluence and the deposition temperature was investigated. The Sr{sub 2}FeMoO{sub 6} thin films showed clear evidence of impurity phases when the laser fluence was altered. Phase pure films resulted through the whole temperature range between 900 °C and 1050 °C when a proper laser fluence was used. Films fabricated at lower deposition temperatures resulted with smaller surface roughnesses around 5 nm, higher Curie temperatures and with relatively high saturation magnetization values. The Curie temperature was determined from the minimum of the first order derivative and results showed the highest values of 350 K and above. The films with the highest Curie temperature reached zero magnetization above 400 K. The results indicate that both high microstructural and high magnetic quality Sr{sub 2}FeMoO{sub 6} thin films can be obtained with a deposition temperature between 900 °C and 950 °C. This provides better fabrication parameters for the upcoming SFMO multilayer structures.

The temperature dependence of magnetic anisotropy of Nd-Fe-B thin films

Science.gov (United States)

Sato, Takuya; Hashimoto, Ryuji; Tanaka, Yoshitomo; Suzuki, Kenichi; Enokido, Yasushi; Choi, Kyung-Ku; Suzuki, Takao

2018-05-01

The magnetic properties of Nd-Fe-B thin films with the three different compositions (#1: Nd12.6Fe81.5B5.9, #2: Nd14.6Fe78.1B7.4 and #3: Nd22.6Fe66.2B11.2) are discussed. With increasing Nd content, the c-axis orientation along the film normal is enhanced. It is found that sample #2 possesses the saturation magnetization Ms very close to that for Nd2Fe14B over a temperature range from 100 to about 300K. The magnetic anisotropy constant Ku2 for sample #2 is the highest among those samples, but smaller by about 20%, as compared to that for Nd2Fe14B. It is of interest to note that the temperature TR at which Ku1 changes its sign is lower by about 30K as compared to that previously reported for Nd2Fe14B. The reason for this discrepancy is not clear, but could be due to the presence of the minority phases of Nd-rich compounds and also a possible contribution of the magneto-elastic effect to the net magnetic anisotropy.

Skyrmions and Novel Spin Textures in FeGe Thin Films and Artificial B20 Heterostructures

Science.gov (United States)

Ahmed, Adam Saied

Skyrmions are magnetic spin textures that have a non-zero topological winding number associated with them. They have attracted much interest recently since they can be as small as 1 nm and could be the next generation of magnetic memory and logic. First, we grow epitaxial films of FeGe by molecular beam epitaxy and characterized the skyrmion properties. This had led us to image skyrmions in real-space with Lorentz transmission electron microscopy for the first time in the United States. Next, from an extensive series of thin and thick films, we have experimentally shown the existence of a magnetic surface state in FeGe and, consequently, any skyrmion material for the first time. Complementary theoretical calculations supported the existence of chiral bobbers--a surface state only predicted in 2015. Next, we fabricated for the first time a new class of skyrmion materials: B20 superlattices. These novel heterostructures of [FeGe/MnGe/CrGe] have now opened the door for tunable skyrmion systems with both Dresselhaus and Rashba Dzyaloshinskii-Moriya interactions. Additionally, we perform resonant soft x-ray scattering to image magnetic spin textures in reciprocal space for FeGe thin films in transmission. We have accomplished the removal of substrate and left an isolated single-crystal FeGe film. Lastly, SrO is grown on graphene as a crystalline, atomically smooth, and pinhole free tunnel barrier for spin injection.

Growing barium hexaferrite (BaFe{sub 12}O{sub 19}) thin films using chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Budiawanti, Sri, E-mail: awanty77@yahoo.com [Graduate Program of Materials Science, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Faculty of Teacher Training and Education, Sebelas Maret University (Indonesia); Soegijono, Bambang [Multiferroic Laboratory, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia)

2016-04-19

Barium hexaferrite (BaFe{sub 12}O{sub 19}, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

Growing barium hexaferrite (BaFe_1_2O_1_9) thin films using chemical solution deposition

International Nuclear Information System (INIS)

Budiawanti, Sri; Soegijono, Bambang

2016-01-01

Barium hexaferrite (BaFe_1_2O_1_9, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

International Nuclear Information System (INIS)

Tao, Lei; Li, Heqin; Shen, Jiong; Qiao, Kai; Wang, Wei; Zhou, Chu; Zhang, Jing; Tang, Qiong

2015-01-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H 2 SO 4 solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

Energy Technology Data Exchange (ETDEWEB)

Tao, Lei [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Shen, Jiong [Earth-Panda Advance Magnetic Material Co., Ltd., Anhui Lujiang 231500 (China); Qiao, Kai; Wang, Wei; Zhou, Chu [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Anhui Hefei 230009 (China)

2015-02-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H{sub 2}SO{sub 4} solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film.

Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

2017-03-15

The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

Science.gov (United States)

Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

2017-10-01

Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic properties of pure and Fe doped HoCrO{sub 3} thin films fabricated via a solution route

Energy Technology Data Exchange (ETDEWEB)

Yin, Shiqi; Sauyet, Theodore [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Guild, Curt [Department of Chemistry, University of Connecticut, Storrs, CT 06269 (United States); Suib, S.L. [Department of Chemistry, University of Connecticut, Storrs, CT 06269 (United States); Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Jain, Menka, E-mail: menka.jain@uconn.edu [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

2017-04-15

Multiferroic properties of orthorhombically distorted perovskite rare-earth chromites, such as HoCrO{sub 3}, are being investigated extensively in recent years. In the present work, we report on the effect of Fe substitution on the magnetic properties of HoCrO{sub 3} thin films. Thin films of HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} were fabricated via a solution route on platinized silicon substrates. Structural properties of the films were evaluated by X-ray diffraction and Raman spectroscopy techniques. The surface morphology and cross-sections of the films were examined using scanning electron microscopy. Optical band gaps of pure and Fe doped HoCrO{sub 3} films are found to be 3.45 eV and 3.39 eV, respectively. The magnetization measurements show that the Néel temperatures (where Cr{sup 3+} orders) for the HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} films are 134 and 148 K, respectively. In a magnetic field of 2 T, the maximum entropy change and relative cooling power, two parameters to evaluate the magnetocaloric properties of a material, were 0.813 J/kg K at 11 K and 21.1 J/kg for HoCrO{sub 3} film, in comparison with 0.748 J/kg K at 15 K and 26.8 J/kg for HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} film. To our knowledge, this is the first work exploring the band gap and magnetocaloric properties of rare-earth chromite thin films. These findings should inspire the development of rare-earth chromite thin films for temperature control of nanoscale electronic devices and sensors in the low temperature region (< 30 K). - Highlights: • Phase-pure HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3}films were fabricated on platinized Sivia a solution route. • This is the first work on the exploration of band gap and magnetocaloric properties of rare-earth chromitefilms. • From 0-2 T, maximum entropy change for the HoCrO{sub 3} film was 0.813 J/kg K at 11 K.From 0-2 T, maximum entropy change for HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} film was 0.748 J/kg K at 15

The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films

International Nuclear Information System (INIS)

Koparan, E.T.; Sidorenko, A.; Yanmaz, E.

2013-01-01

Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be

Structural, mechanical, and magnetic properties of GaFe{sub 3}N thin films

Energy Technology Data Exchange (ETDEWEB)

Junaid, Muhammad, E-mail: junaid@mch.rwth-aachen.de; Music, Denis, E-mail: music@mch.rwth-aachen.de; Hans, Marcus; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Scholz, Tanja; Dronskowski, Richard [Institute of Inorganic Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Primetzhofer, Daniel [Department of Physics and Astronomy, Uppsala University, Lägerhyddsvägen 1, S-75120 Uppsala (Sweden)

2016-07-15

Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe{sub 3}N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe{sub 3}N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe{sub 3}N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

Energy Technology Data Exchange (ETDEWEB)

Schuster, Ellen Ursula

2007-12-17

The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

Photoelectrochemical Characterization of Sprayed alpha-Fe2O3 Thin Films : Influence of Si Doping and SnO2 Interfacial Layer

NARCIS (Netherlands)

Liang, Y.; Enache, C.S.; Van De Krol, R.

2008-01-01

a-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc)3. The donor density in the Fe2O3 films could be tuned between 10171020cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

International Nuclear Information System (INIS)

Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

2017-01-01

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Modified voltammetric, impedimetric and optical behavior of polymer- assisted sol-gel MgFe2O4 nanostructured thin films

International Nuclear Information System (INIS)

Bazhan, Z.; Ghodsi, F.E.; Mazloom, J.

2017-01-01

Highlights: •Electrochemical properties of spinel PEG/PVP MgFe 2 O 4 thin films prepared by spin coating technique have been investigated. •PSD analysis indicated that spectral roughness of films decreased by polymer incorporation. •Optical calculations exhibited a blue shift on optical band gap by polymer addition. •CV curves revealed that ion storage capacitance of PEG/MgFe 2 O 4 is two times higher than MgFe 2 O 4 thin films. •EIS analysis confirmed that incorporation of appropriate amount of PEG reduced the charge transfer resistance. -- Abstract: The effect of polyethylene glycol (PEG) and polyvinylpyrrolidone (PVP) on physical properties of sol-gel prepared magnesium ferrite (MF) thin films was investigated. The X-ray diffraction (XRD) results showed the formation of cubic spinel magnesium ferrite for all samples. The surface morphology of films changed and average surface roughness decreased by polymer addition. The height-height correlation function and fractal dimension were evaluated using cube counting and triangulation methods from atomic force microscopy (AFM) images. The refractive index and extinction coefficient of MF thin films decreased by adding polymer while the band gap value increased from 2.24 to 2.72 eV. The PEG addition enhanced the electrochemical performance while PVP addition didn’t have significant effect on cyclic voltammetry (CV) of magnesium ferrite thin films. The sample with highest value of PEG showed the maximum specific capacitance (68.5 mF cm −2 ) and the smallest charge transfer resistance (565 Ω) among all samples.

Anisotropy, magnetostriction and local chemical order in amorphous TbxFe1-x (0.1thin films

International Nuclear Information System (INIS)

Hernando, A.; Prados, C.; Prieto, C.

1996-01-01

Local chemical order in amorphous TbFe thin films has been investigated in a variety of compositions, using EXAFS, magnetostriction and anisotropy measurements. Data reported here are consistent with a density of Fe-Tb pairs in the film plane larger than in the perpendicular direction. (orig.)

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Science.gov (United States)

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

2015-08-01

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Temperature-dependent magnetism of Fe thin films on ZnSe(0 0 1)

International Nuclear Information System (INIS)

Cantoni, M.; Bertacco, R.; Ciccacci, F.; Puppin, E.; Pinotti, E.; Brenna, M.; Marangolo, M.; Eddrieff, M.; Torelli, P.; Maccherozzi, F.; Fujii, J.; Panaccione, G.

2007-01-01

We present X-ray magnetic circular dichroism (XMCD) and magneto-optical Kerr effect (MOKE) data on the magnetic properties of Fe/ZnSe(0 0 1) thin films at increasing Fe coverage. The magnetic behaviour of the Fe overlayer is superparamagnetic for a coverage up to 6 monolayers whereas, above this threshold, a truly ferromagnetic phase shows up. XMCD and MOKE data show that this behaviour is substantially unchanged in the temperature range 10-300 K for all the investigated coverages: these findings imply that the blocking temperature is definitely below 10 K

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

Science.gov (United States)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Room temperature multiferroic properties of (Fe{sub x}, Sr{sub 1−x})TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyoung-Tae; Kim, Cheolbok; Fang, Sheng-Po; Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-09-08

This letter reports the structural, dielectric, ferroelectric, and magnetic properties of Fe substituted SrTiO{sub 3} thin films in room temperature. The structural data obtained from x-ray diffraction indicates that (Fe{sub x},Sr{sub 1−x})TiO{sub 3}, the so called FST, transforms from pseudocubic to tetragonal structures with increase of the Fe content in SrTiO{sub 3} thin films, featuring the ferroelectricity, while vibrating sample magnetometer measurements show magnetic hysteresis loops for the samples with low iron contents indicating their ferromagnetism. The characterized ferroelectricity and ferromagnetism confirms strong multiferroitism of the single phase FST thin films in room temperature. Also, an FST thin film metal-insulator-metal multiferroic capacitor has been fabricated and characterized in microwave frequencies between 10 MHz and 5 GHz. A capacitor based on Fe{sub 0.1}Sr{sub 0.9}TiO{sub 3} with a thickness of 260 nm shows a high electric tunability of 18.6% at 10 V and a maximum magnetodielectric value of 1.37% at 0.4 mT with a loss tangent of 0.021 at 1 GHz. This high tuning and low loss makes this material as a good candidate for frequency agile microwave devices such as tunable filters, phase shifters, and antennas.

Phase transitions in Fe_0_._5Co_0_._5 (110) thin films

International Nuclear Information System (INIS)

Ramírez-Dámaso, G.; Castillo-Alvarado, F.L.; Rojas-Hernández, E.

2016-01-01

In this paper, we present calculations for two second-order phase transitions in (110) Fe_0_._5Co_0_._5 thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

Evolution of LiFePO4 thin films interphase with electrolyte

Science.gov (United States)

Dupré, N.; Cuisinier, M.; Zheng, Y.; Fernandez, V.; Hamon, J.; Hirayama, M.; Kanno, R.; Guyomard, D.

2018-04-01

Many parameters may control the growth and the characteristics of the interphase, such as surface structure and morphology, structural defects, grain boundaries, surface reactions, etc. However, polycrystalline surfaces contain these parameters simultaneously, resulting in a quite complicated system to study. Working with model electrode surfaces using crystallographically oriented crystalline thin films appears as a novel and unique approach to understand contributions of preferential orientation and rugosity of the surface. In order to rebuild the interphase architecture along electrochemical cycling, LiFePO4 epitaxial films offering ideal 2D (100) interfaces are here investigated through the use of non-destructive depth profiling by Angular Resolved X-ray Photoelectron Spectroscopy (ARXPS). The composition and structure of the interphase is then monitored upon cycling for samples stopped at the end of charge and discharge for various numbers of cycles, and discussed in the light of combined XPS and X-ray reflectivity (XRR) measurements. Such an approach allows describing the interphase evolution on a specific model LiFePO4 crystallographic orientation and helps understanding the nature and evolution of the LiFePO4/electrolyte interphase forming on the surface of LiFePO4 poly-crystalline powder.

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Akhilesh Kumar [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Hsu, Jen-Hwa [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

2016-11-15

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]{sub 2}/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T{sub A}=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T{sub A}≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T{sub A}=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T{sub A} and temperature. A large reduction in coercivity (H{sub C}) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H{sub C}(T), i.e., a broad minimum in H{sub C}(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H{sub C}(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T{sub C}) with T{sub A} (x). The multilayer films annealed at 200 °C exhibit low value of T{sub C} with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T{sub C} with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

KAUST Repository

Liang, Cai; Gooneratne, Chinthaka; Cha, Dong Kyu; Chen, Long; Gianchandani, Yogesh; Kosel, Jü rgen

2012-01-01

MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

KAUST Repository

Liang, Cai

2012-12-07

MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

Directory of Open Access Journals (Sweden)

Kyung-Jong Noh

2012-01-01

Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

2014-01-01

The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

Directory of Open Access Journals (Sweden)

Andrei E. Surdu

2011-12-01

Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

Highly coercive thin-film nanostructures

International Nuclear Information System (INIS)

Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

2005-01-01

The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

Epitactical FeAl films on sapphire and their magnetic properties

International Nuclear Information System (INIS)

Trautvetter, Moritz

2011-01-01

In the presented thesis epitaxial FeAl thin films on sapphire have been prepared by pulse laser deposition (PLD). The thin films deposited at room temperature exhibits ferromagnetism and subsequent annealing is necessary to transform the thin films to paramagnetic B2-phase, where the transition temperature depends on the crystalline orientation of the sapphire substrate. Alternatively, by deposition at higher substrate temperature the B2-phase is obtained directly. However, morphology of the FeAl film is influenced by different growth modes resulting from different substrate temperatures. The paramagnetic FeAl films can then be transformed to ferromagnetic phase by successive ion irradiation. Independent of the ion species used for irradiation, the same universal relation between thin films' coercive fields and irradiation damage is identified. The ion irradiation ferromagnetism can be transformed back to paramagnetism by subsequent annealing. The mutual transition between ferromagnetic and paramagnetic phases has been performed several times and shows full reversibility. The ferromagnetic phase induced by Kr + irradiation exhibits structural relaxation, where the saturate magnetization of FeAl thin film gradually decreases in several days. Later, ion irradiation has been performed selectively on defined areas of the thin film with the help of an unconventional lithography technique. The subsequent thin film is composed of ordered hexagonal array of ferromagnetic nano-cylinders separated by a paramagnetic matrix, suggesting a promising system for magnetic data storage. (orig.)

Microstructure evolution and coercivity enhancement in Nd-Fe-B thin films diffusion-processed by R-Al alloys (R=Nd, Pr)

Science.gov (United States)

Xie, Yigao; Yang, Yang; Zhang, Tongbo; Fu, Yanqing; Jiang, Qingzheng; Ma, Shengcan; Zhong, Zhenchen; Cui, Weibin; Wang, Qiang

2018-05-01

Diffusion process by Nd-Al and Pr-Al alloys was compared and investigated in Nd-Fe-B thin films. Enhanced coercivity 2.06T and good squareness was obtained by using Pr85Al15 and Nd85Al15 alloys as diffusion sources. But the coercivity of diffusion-processed thin films by Pr70Al30 and Pr55Al45 alloys decreased to 2.04T and 1.82T. High ambient coercivity of 2.26T was achieved in diffusion-processed thin film by Nd70Al30 leading to an improved coercivity thermal stability because Nd2Fe14B grains were enveloped by Nd-rich phase as seen by transmission electron microscopy Nd-loss image. Meanwhile, microstructure-dependent parameters α and Neff were improved. However, high content of Al in diffusion-processed thin film by Nd55Al45 lead to degraded texture and coercivity.

Magnetization process in FePd thin films

International Nuclear Information System (INIS)

Klein, O.; Samson, Y.; Marty, A.; Guillous, S.; Viret, M.; Fermon, C.; Alloul, H.

2001-01-01

A custom made magnetic force microscope is used to study the magnetization process in thin films of FePd throughout the entire hysteresis loop. The 40 nm thick sample has a strong perpendicular anisotropy, which leads to a maze of 80 nm wide stripes of opposite polarity in the remanent state. The growth of M, when H increases, happens through an unwinding of the reversed domain along their axis. Together with the length recession, the reversed domain width also contracts with increasing field. The later effect is estimated by comparison of our images with magneto-optical Kerr measurements. A large disorder in the propagation process of the domain walls is observed. It is also found that the bubble configuration near the saturation field is unstable. [copyright] 2001 American Institute of Physics

Peltier cooling and onsager reciprocity in ferromagnetic thin films.

Science.gov (United States)

Avery, A D; Zink, B L

2013-09-20

We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Habib, Zubida [National Institute of Technology, Department of Chemistry, Srinagar (India); National Institute of Technology, Department of Physics, Srinagar (India); Ikram, Mohd; Mir, Sajad A. [National Institute of Technology, Department of Physics, Srinagar (India); Sultan, Khalid [Central University of Kashmir, Department of Physics, Srinagar (India); Abida [Govt Degree College for Women, Department of Physics, Anantnag, Kashmir (India); Majid, Kowsar [National Institute of Technology, Department of Chemistry, Srinagar (India); Asokan, K. [Inter University Accelerator Centre, New Delhi (India)

2017-06-15

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films grown by pulsed laser deposition on LaAlO{sub 3} substrates. Electronic excitations were induced by 200 MeV Ag{sup 12+} ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe{sub 1-x}Ni{sub x}O{sub 3} (x = 0.1 and 0.3) films compared to HoFeO{sub 3} film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

On the frequency dependence of the magnetic permeability of FeHfO thin films

NARCIS (Netherlands)

Bloemen, P.J.H.; Rulkens, B.

1998-01-01

The frequency dependence of the magnetic permeability as well as of the electrical impedance have been investigated for soft-magnetic granular FeHfO thin films. The impedance measurements indicate that capacitive effects resulting from the inhomogeneous structure of the layers are of no importance

Annealing-induced recovery of indents in thin Au(Fe bilayer films

Directory of Open Access Journals (Sweden)

Anna Kosinova

2016-12-01

Full Text Available We employed depth-sensing nanoindentation to produce ordered arrays of indents on the surface of 50 nm-thick Au(Fe films deposited on sapphire substrates. The maximum depth of the indents was approximately one-half of the film thickness. The indented films were annealed at a temperature of 700 °C in a forming gas atmosphere. While the onset of solid-state dewetting was observed in the unperturbed regions of the film, no holes to the substrate were observed in the indented regions. Instead, the film annealing resulted in the formation of hillocks at the indent locations, followed by their dissipation and the formation of shallow depressions nearby after subsequent annealing treatments. This annealing-induced evolution of nanoindents was interpreted in terms of annihilation of dislocation loops generated during indentation, accompanied by the formation of nanopores at the grain boundaries and their subsequent dissolution. The application of the processes uncovered in this work show great potential for the patterning of thin films.

AFM, XRD and HRTEM Studies of Annealed FePd Thin Films

International Nuclear Information System (INIS)

Perzanowski, M.; Zabila, Y.; Polit, A.; Krupinski, M.; Dobrowolska, A.; Marszalek, M.; Morgiel, J.

2010-01-01

Ferromagnetic FePd L1 0 ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L1 0 ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles. (author)

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

2015-12-15

Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

Nanolaminated FeCoB/FeCo and FeCoB/NiFe soft magnetic thin films with tailored magnetic properties deposited by magnetron sputtering

Science.gov (United States)

Hida, Rachid; Falub, Claudiu V.; Perraudeau, Sandrine; Morin, Christine; Favier, Sylvie; Mazel, Yann; Saghi, Zineb; Michel, Jean-Philippe

2018-05-01

Thin films based on layers of Fe52Co28B20 (at%), Fe65Co35 (at%), and Ni80Fe20 (at%) were deposited by sputtering on 8″ bare Si and Si/200 nm-thermal-SiO2 wafers by simultaneous use of two or more cathodes. Due to the continuous rotation of the substrate cage, such that the substrates faced different targets alternately, the multilayers consisted of stacks of alternating, nanometer-thick regular layers. The composition of the films was determined by Rutherford Backscattering Spectrometry (RBS) and Nuclear Reactive Analysis (NRA), whereas Plasma Profiling Time of Flight Mass Spectrometry (PP-TOFMS) analysis gave depth profile information about the chemical elements. The structural and magnetic properties of the films were investigated by X-ray Diffraction and by TEM analysis, B-H loop tracer and high frequency single coil technique permeametry, respectively. The linear dependence of the coercivity of these thin films versus the grain size can be explained by the random anisotropy model. These novel, composite soft magnetic multilayers, with tunable in-plane anisotropy, allow operation at tunable frequencies, as shown by broadband (between 100 MHz and 10 GHz) RF measurements that exhibit a classical Landau-Lifschitz-Gilbert (LLG) behavior and, combine the magnetic properties of the individual materials in an advantageous way. This article presents a method to produce nanostructured soft magnetic multilayers, the properties of which can easily be tuned by choosing the ratio of the individual nanolayers. In this way it's possible to combine soft magnetic materials with complementary properties, e.g. high saturation magnetization, low coercivity, high specific resistivity and low magnetostriction

Thin film preparation of semiconducting iron pyrite

Science.gov (United States)

Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

1990-08-01

Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Yeon; Lee, Jeong Soo

2008-02-15

This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

High field properties of superconducting BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan [Institute for Metallic Materials, IFW Dresden (Germany); Technical University Dresden (Germany); Kurth, Fritz; Grinenko, Vadim; Nielsch, Kornelius; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Iida, Kazumasa [Nagoya University (Japan); Pervakov, Kirill [Russian Academy of Sciences (Russian Federation); Tarantini, Chiara; Jaroszynski, Jan [National High Magnetic Field Laboratory (United States); Pukenas, Aurimas; Skrotzki, Werner [Technical University Dresden (Germany)

2016-07-01

Fe based superconductors combine the advantages of cuprates (high upper critical field) with the small Hc{sub 2} anisotropy of classic low temperature superconductors, which makes them suitable candidates for high field applications. The study of Fe-based superconducting thin films is one crucial step to explore this potential in more detail. We present results for epitaxial BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films, which have been successfully grown for the first time using pulsed laser deposition. Superconducting transition temperatures of up to 19 K have been realized in slightly overdoped films, which is in good agreement with results obtained for single crystals. The behavior of the upper critical field and critical current density has been measured in high magnetic fields up to 35 T. The results will be correlated to the observed microstructure and compared to high field data for single crystals with similar composition.

Double switching hysteresis loop in a single layer Fe3Pt alloy thin films

International Nuclear Information System (INIS)

Nahid, M.A.I.; Suzuki, Takao

2008-01-01

The Fe 3 Pt alloy thin films were epitaxially grown on MgO(100) substrate by e-beam evaporation. The films were partially ordered at the substrate deposition temperature above 350 deg. C. These partially ordered films exhibit very large biaxial magnetic anisotropy constant in the order of 10 5 J/m 3 and produce double switching in the hysteresis loops. The difference of the switching field of these films can be up to about 3 x 10 5 A/m by tuning the angle of the applied field with respect to the easy axes. This double switching behavior stems from the large biaxial magnetic anisotropy of the films

Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

International Nuclear Information System (INIS)

Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

2011-01-01

A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

Crystallization and atomic diffusion behavior of high coercive Ta/Nd-Fe-B/Ta-based permanent magnetic thin film

Energy Technology Data Exchange (ETDEWEB)

Tian, Na; Zhang, Xiao; You, Caiyin; Fu, Huarui [Xi' an University of Technology, School of Materials Science and Engineering, Xi' an (China); Shen, Qianlong [Logistics University of People' s Armed Police Force, Tianjin (China)

2017-06-15

A high coercivity of about 20.4 kOe was obtained through post-annealing the sputtered Ta/Nd-Fe-B/Ta-based permanent magnetic thin films. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses were performed to investigate the crystallization and atomic diffusion behaviors during post-annealing. The results show that the buffer and capping Ta layers prefered to intermix with Fe and B atoms, and Nd tends to be combined with O atoms. The preferred atomic combination caused the appearance of the soft magnetic phase of Fe-Ta-B, resulting in a kink of the second quadratic magnetic hysteresis loop. The preferred atomic diffusion and phase formation of the thin films were well explained in terms of the formation enthalpy of the various compounds. (orig.)

Effects of magnetic flux densities on microstructure evolution and magnetic properties of molecular-beam-vapor-deposited nanocrystalline Fe_3_0Ni_7_0 thin films

International Nuclear Information System (INIS)

Cao, Yongze; Wang, Qiang; Li, Guojian; Ma, Yonghui; Du, Jiaojiao; He, Jicheng

2015-01-01

Nanocrystalline Fe_3_0Ni_7_0 (in atomic %) thin films were prepared by molecular-beam-vapor deposition in magnetic fields with different magnetic flux densities. The microstructure evolution of these thin films was studied by atomic force microscopy, transmission electron microscopy, and high resolution transmission electron microscopy; the soft magnetic properties were examined by vibrating sample magnetometer at room temperature. The results show that all our Fe_3_0Ni_7_0 thin films feature an fcc single-phase structure. With increasing magnetic flux density, surface roughness, average particle size and grain size of the thin films decreased, and the short-range ordered clusters (embryos) of thin films increased. Additionally, the magnetic anisotropy in the in-plane and the coercive forces of the thin films gradually reduced with increasing magnetic flux density. - Highlights: • With increasing magnetic flux density, average particle size of films decreased. • With increasing magnetic flux density, surface roughness of thin films decreased. • With increasing magnetic flux density, short-range ordered clusters increased. • With increasing magnetic flux density, the coercive forces of thin films reduced. • With increasing magnetic flux density, soft magnetic properties are improved.

Multiple oxide content media for columnar grain growth in L10 FePt thin films

International Nuclear Information System (INIS)

Ho, Hoan; Yang, En; Laughlin, David E.; Zhu, Jian-Gang

2013-01-01

An approach to enhance the height-to-diameter ratio of FePt grains in heat-assisted magnetic recording media is proposed. The FePt-SiO x thin films are deposited with a decrease of the SiO x percentage along the film growth direction. When bi-layer and tri-layer media are sputtered at 410 °C, we observe discontinuities in the FePt grains at interfaces between layers, which lead to poor epitaxial growth. Due to increased atomic diffusion, the bi-layer media sputtered at 450 °C is shown to (1) grow into continuous columnar grains with similar size as single-layer media but much higher aspect ratio, (2) have better L1 0 ordering and larger coercivity.

Microstructure and Electrical Properties of Fe,Cu Substituted (Co,Mn)3O4 Thin Films

DEFF Research Database (Denmark)

Szymczewska, Dagmara; Molin, Sebastian; Hendriksen, Peter Vang

2017-01-01

In this work, thin films (~1000 nm) of a pure MnCo2O4 spinel together with its partially substituted derivatives (MnCo1.6Cu0.2Fe0.2O4, MnCo1.6Cu0.4O4, MnCo1.6Fe0.4O4) were prepared by spray pyrolysis and were evaluated for electrical conductivity. Doping by Cu increases the electrical conductivit...

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

Science.gov (United States)

Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

2015-04-10

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

Study on the Preparation and Properties of Colored Iron Oxide Thin Films

International Nuclear Information System (INIS)

Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

2013-01-01

Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

Growth and surface modification of LaFeO3 thin films induced by reductive annealing

International Nuclear Information System (INIS)

Flynn, Brendan T.; Zhang, Kelvin H.L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

2015-01-01

Highlights: • LaFeO 3 was grown by molecular beam epitaxy on ZrO 2 :Y 2 O 3 . • The film was highly oriented but not single crystalline. • Angle resolved XPS revealed differences between surface and bulk oxygen. • Annealing the film in vacuum resulted in the sequential reduction of Fe cations. • A greater degree of Fe reduction was found at the surface. - Abstract: The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO 3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications

Flexible thin film magnetoimpedance sensors

International Nuclear Information System (INIS)

Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

2016-01-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

Flexible thin film magnetoimpedance sensors

Energy Technology Data Exchange (ETDEWEB)

Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

2016-10-01

Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

BiFeO3 thin films: Novel effects

Indian Academy of Sciences (India)

photolithography followed by etching of the silver film. Saturation ... Fe in +3 state. Films thus obtained are therefore highly resistive (ρ ∼ 108–109 cm) and hence exhibit saturated ferroelectric hysteresis loop (figure 3). Anomaly in ... BiFeO3 bulk sample by Rogniskaya et al [4] had indicated abrupt change in lattice parame-.

Effect of the thickness reduction on the structural, surface and magnetic properties of α-Fe{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Aragón, Fermin F.H., E-mail: fherrera@fis.unb.br [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Ardisson, José D. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Aquino, Juan C.R. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Gonzalez, Ismael; Macedo, Waldemar A.A. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Coaquira, José A.H.; Mantilla, John; Silva, Sebastião W. da; Morais, Paulo C. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil)

2016-05-31

Hematite (α-Fe{sub 2}O{sub 3}) polycrystalline thin films of different thicknesses were produced by thermal oxidation in air atmosphere from Fe metallic thin-films deposited by radio frequency (RF) sputtering technique. X-ray diffraction (XRD) patterns confirm the formation of hematite phase in all samples and indicate that the mean grain size decreases as the film thickness becomes thinner. Conversion electron Mössbauer spectroscopy (CEMS) spectra at room temperature show magnetic splitting (six line patterns). It is determined that the resonance peaks become broader and asymmetric as the film thickness decreases. This finding was associated with the structural disorder introduced by the thickness reduction. Magnetization as a function of the magnetic field curve obtained at 300 K shows the presence of a weak-ferromagnetic contribution, which was assigned to the large density of decompensated spins at the films surface. From the magnetization vs. temperature curves it has been determined that the Morin transition temperature (T{sub M}) is shifted from ~ 240 K to ~ 196 K, meanwhile it becomes more broadened as the film thickness decreases. X-ray photoelectron spectroscopy (XPS) measurements show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions whose population increases as the film becomes thinner. The density of chemisorbed oxygen increases as the film thickness is reduced in agreement with the results obtained from the other measurements in this work. - Highlights: • Hematite thin films with different thickness were deposited by RF sputtering technique. • X-ray diffraction patterns confirm the formation of hematite phase in all samples. • Hysteresis curve at 300 K shows the presence of a weak-ferromagnetic phase. • XPS show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions.

Single-phase {beta}-FeSi{sub 2} thin films prepared on Si wafer by femtosecond laser ablation and its photoluminescence at room temperature

Energy Technology Data Exchange (ETDEWEB)

Lu Peixiang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)]. E-mail: lupeixiang@mail.hust.edu.cn; Zhou Youhua [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China) and Physics and Information School, Jianghan University, Wuhan 430056 (China)]. E-mail: yhzhou@jhun.edu.cn; Zheng Qiguang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Guang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2006-02-06

Single-phase {beta}-FeSi{sub 2} thin films were prepared on Si(100) and Si(111) wafers by using femtosecond laser deposition with a FeSi{sub 2} alloy target for the first time. X-ray diffraction (XRD), field scanning electron microscopy (FSEM), scanning probe microscopy (SPM), electron backscattered diffraction pattern (EBSD), and Fourier-transform Raman infrared spectroscopy (FTRIS) were used to characterize the structure, composition, and properties of the {beta}-FeSi{sub 2}/Si films. The orientation of {beta}-FeSi{sub 2} grains was found to depend on the orientation of the Si substrates, and photoluminescence at wavelength of 1.53 {mu}m was observed from the single-phase {beta}-FeSi{sub 2}/Si thin film at room temperature (20 {sup o}C)

Rapid thermal annealing of FePt and FePt/Cu thin films

Energy Technology Data Exchange (ETDEWEB)

Brombacher, Christoph

2011-01-10

Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

BiFeO3 epitaxial thin films and devices: past, present and future

Science.gov (United States)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films

Directory of Open Access Journals (Sweden)

G. Vinai

2015-11-01

Full Text Available We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO thin films grown on (001 (110 and (111 oriented SrTiO3 (STO substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Science.gov (United States)

Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

2017-10-01

This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

Influences of the iron ion (Fe3+)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

International Nuclear Information System (INIS)

Ben Naceur, J.; Mechiakh, R.; Bousbih, F.; Chtourou, R.

2011-01-01

Titanium dioxide (TiO 2 ) thin films doping of various iron ion (Fe 3+ ) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO 2 thin films comprised only the anatase TiO 2 , but the crystallinity decreased when the Fe 3+ content increased from 0% to 20%. During the Fe 3+ addition to 20%, the phase of TiO 2 thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe 3+ content.

Structure and electrical properties of (La, Zn) Co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Y. J.; Kim, H. J.; Kim, J. W.; Raghavan, C. M.; Kim, S. S.

2012-08-01

We prepared pure BiFeO3 (BFO) and (Bi0.9La0.1)(Fe0.975Zn0.025)O3- δ (BLFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BLFZO thin film. The leakage current density of the BLFZO thin film was four orders of magnitude lower than that of the pure BFO, 4.17 × 10-7 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BLFZO thin film were 97 µC/cm2 and 903 kV/cm at an applied electric field of 972 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 63 µC/cm2 and 679 kV/cm at 10 kHz, respectively. Also, after 1.44 × 1010 cycles, a better fatigue endurance was observed in the BLFZO thin film, which was 90% of its initial value. We also confirmed that the remnant polarization (2 P r ) and the coercive electric field (2 E c ) were fairly saturated above a measurement frequency of 15 kHz for the BLFZO thin film.

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

Science.gov (United States)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

Unexpected formation by pulsed laser deposition of nanostructured Fe/olivine thin films on MgO substrates

International Nuclear Information System (INIS)

Legrand, C.; Dupont, L.; Davoisne, C.; Le Marrec, F.; Perriere, J.; Baudrin, E.

2011-01-01

Olivine-type LiFePO 4 thin films were grown on MgO (1 0 0) substrates by pulsed laser deposition (PLD). The formation of an original nanostructure is evidenced by transmission electron microscopy measurements. Indeed, on focused ion beam prepared cross sections of the thin film, we observe, the amazing formation of metallic iron/olivine nanostructures. The appearance of such a structure is explained owing to a topotactic relation between the two phases as well as a strong Mg diffusion from the substrate to the film surface. Magnesium migration is thus concomitant with the creation of metallic iron domains that grow from the core of the film to the surface leading to large protuberances. To the best of our knowledge, this is the first report on iron extrusion from the olivine-type LiFePO 4 . -- Graphical Abstract: HRTEM image of olivine/Fe nanostructure obtained by PLD. Display Omitted Research highlights: → This manuscript describes the attempt to prepare textured LiFePO 4 by PLD. This is presently a challenge to better understand the physical properties of the material, used as cathode in lithium ion batteries. → We describe for the first time the iron extrusion from this material. Indeed, there were recent reports on the possible non-stoichiometry, i.e. lithium or oxygen. However, on the iron side, only some defect were observed for hydrothermally prepared material but the extrusion is new in this paper. → We prepared interesting nanostructures which could be used for different fundamental studies: electric and magnetic measurements.

Synthesis of nanocrystalline nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Pawar, D.K. [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India); Pawar, S.M. [Department of Materials Science and Engineering, Chonnam National University, 500 757 (Korea, Republic of); Patil, P.S. [Department of Physics, Shivaji University, Kolhapur 416 004 (M.S.) (India); Kolekar, S.S., E-mail: kolekarss2003@yahoo.co.in [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India)

2011-02-24

Graphical abstract: Display Omitted Research highlights: > We have successfully synthesized nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films on stainless steel substrates using a low temperature chemical bath deposition method. > The surface morphological study showed the compact flakes like morphology. > The as-deposited thin films are hydrophilic (10{sup o} < {theta} < 90{sup o}) whereas the annealed thin films are super hydrophilic ({theta} < 10{sup o}) in nature. > Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm{sup -1} which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness {approx}1.8 {mu}m after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle ({theta}) of 5{sup o}.The electrochemical supercapacitor study of Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm{sup -2} and 19 F g{sup -1}, respectively.

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

Optical characterization of {beta}-FeSi{sub 2} thin films prepared on fused quartz by femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

Zhou Youhua [Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Physics and Information Engineering, Jianghan University, Wuhan 430056 (China); Lu Peixiang [Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)]. E-mail: lupeixiang@mail.hust.edu.cn; Yang Guang [Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Long Hua [Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Zheng Qiguang [Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2007-10-01

Single-phase {beta}-FeSi{sub 2} thin films have been grown on quartz substrates using femtosecond laser deposition (800 nm, 50 fs, 1 kHz) under gas pressure of 3.0x10{sup -4} Pa. X-ray diffraction (XRD) and field-emission scanning electron microscopy (SEM) were used to determine the structural properties and surface images of the films. Typical XRD patterns of the film showed that no other diffraction peak except {beta}-FeSi{sub 2} was found. The SEM results indicated that the films were composed of well-distributed grains, in the range 50-150 nm in diameter. In addition, normal incidence spectral transmittance and reflectance data suggested that the {beta}-FeSi{sub 2} film has a direct energy gap of about 0.85 eV. The thickness of the layer and the refractive index of the film were determined by performed calculation in the wavelength range 1.9-2.7 {mu}m. Furthermore, the Raman spectra of the films were also discussed.

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Effect of Hf underlayer on structure and magnetic properties of rapid thermal annealed FePt thin films

International Nuclear Information System (INIS)

Shen, C.Y.; Yuan, F.T.; Chang, H.W.; Lin, M.C.; Su, C.C.; Chang, S.T.; Wang, C.R.; Mei, J.K.; Hsiao, S.N.; Chen, C.C.; Shih, C.W.; Chang, W.C.

2014-01-01

FePt(20 nm) and FePt(20 nm)/Hf(10 nm) thin films prepared on the glass substrates by sputtering and post annealing are studied. For both samples, the as deposited films are disordered and L1 0 -ordering is triggered by a 400 °C-annealing. At T a ≥600 °C, Hf–Pt intermetallic compound forms with increasing T a , which consumes Pt in FePt layer and results in the formation of Fe 3 Pt phase. The film becomes soft magnetic at T a =800 °C. The optimized condition of FePt/Hf film is in the T a range of 500 to 600 °C where the interdiffusion between Hf and FePt layer is not extensive. The value of H c is 8.9 kOe and M r is 650–670 emu/cm 3 . Unlike FePt films, the Hf-undelayered samples show significantly reduced out-of-plane remanent and coercivity. The values for both are around 50% smaller than that of the FePt films. Additionally, Hf underlayer markedly reduces the FePt grain size and narrows the distribution, which enhances magnetic intergrain coupling. Good in-plane magnetic properties are preferred for the uses like a hard biasing magnet in a spintronic device. - Highlights: • Effect of Hf underlayer on structure and magnetic properties of FePt films are studied. • Hf underlayer reduces size, narrows the distribution of grains and thus enhances intergrain coupling. • Higher T a ≥600 °C makes Hf–Pt intermetallic compound and thus Fe 3 Pt phase form. • Good in-plane magnetic property is proper for uses in hard biasing magnet in spintronic devices

Phase transitions in Fe{sub 0.5}Co{sub 0.5} (110) thin films

Energy Technology Data Exchange (ETDEWEB)

Ramírez-Dámaso, G., E-mail: gramirezd@ipn.mx [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico); Castillo-Alvarado, F.L. [Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Edificio 9, Col. San Pedro Zacatenco, C. P. 07738 Ciudad de México (Mexico); Rojas-Hernández, E. [Escuela Superior de Ingeniería y Arquitectura “Unidad Ticomán” del Instituto Politécnico Nacional, Av. Ticomán No. 600, Col. San José Ticomán, Del. G. A. M., C. P. 07330 Ciudad de México (Mexico)

2016-12-15

In this paper, we present calculations for two second-order phase transitions in (110) Fe{sub 0.5}Co{sub 0.5} thin films with 11, 15, and 19 monoatomic layers. The lattice and magnetic transitions are based on thermodynamic equilibrium considerations of the magnetic alloy. The procedure proposed by Valenta and Sukiennicki was applied to calculate the composition x(i), the lattice order parameter t(i), and the magnetic order parameter σ(i) as a function of temperature T. We confirmed that both phase transitions, lattice and magnetic, are of the second order, in accordance with experimental results in the literature. The obtained behavior of these parameters indicates their inhomogeneity due to the boundary conditions on the surfaces of the thin film.

Magnetostrictive thin films prepared by RF sputtering

International Nuclear Information System (INIS)

Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

2005-01-01

Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

Orthorhombic polar Nd-doped BiFeO{sub 3} thin film on MgO substrate

Energy Technology Data Exchange (ETDEWEB)

Leontyev, I N; Janolin, P-E; Dkhil, B [Laboratoire Structures, Proprietes et Modelisation des Solides, UMR CNRS-Ecole Centrale Paris, 92295 Chatenay-Malabry Cedex (France); Yuzyuk, Yu I [Faculty of Physics, Southern Federal University, Zorge 5, Rostov-on-Don 344090 (Russian Federation); El-Marssi, M [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Chernyshov, D; Dmitriev, V [Swiss-Norwegian Beam Lines at ESRF, Boite Postale 220, F-38043 Grenoble (France); Golovko, Yu I; Mukhortov, V M, E-mail: i.leontiev@rambler.ru [Southern Scientific Center RAS, Rostov-on-Don, 344006 (Russian Federation)

2011-08-24

A Nd-doped BiFeO{sub 3} thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45{sup 0} with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

Directory of Open Access Journals (Sweden)

Derang Cao

2017-11-01

Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

International Nuclear Information System (INIS)

Ngamou, Patrick Herve Tchoua; Bahlawane, Naoufal

2009-01-01

Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 deg. C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO 3 >LaMnO 3 >LaCrO 3 >LaFeO 3 . The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices. - Graphical abstract: We report a single step deposition of perovskite thin films LaMO 3 (M: Co, Mn, Cr, Fe) using pulsed spray evaporation chemical vapor deposition. Electrical and thermopower properties, similar to these of bulk materials, could promote the development of modern thermoelectric devices based on thin films technology.

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

Science.gov (United States)

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

Science.gov (United States)

Sabet, S.; Hildebrandt, E.; Alff, L.

2017-10-01

Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.

First report on synthesis of ZnFe_2O_4 thin film using successive ionic layer adsorption and reaction: Approach towards solid-state symmetric supercapacitor device

International Nuclear Information System (INIS)

Raut, Shrikant S.; Sankapal, Babasaheb R.

2016-01-01

Highlights: • First report on synthesis of ZnFe_2O_4 thin film using SILAR method. • ZnFe_2O_4 electrode yields the specific capacitance of 471 Fg"−"1 at a scan rate of 5 mV s"−"1 in 1 M NaOH aqueous solution. • Solid-state symmetric supercapacitor device based on ZnFe_2O_4 sandwiched in polyvinyl alcohol (PVA)–LiClO_4 gel electrolyte exhibits voltage windows of 1.0 V. • ZnFe_2O_4-SSS supercapacitor device shows good energy and power density with long cycle life. - Abstract: ZnFe_2O_4 thin film has been synthesized by a simple and low cost successive ionic layer adsorption and reaction (SILAR) method without the use of surfactant or template. The nanoplate composed of nanoparticles with porous surface morphology has been revealed which is beneficial towards supercapacitor application. Formed ZnFe_2O_4 thin film has been tested as an electrode material for supercapacitor through electrochemical analysis. First attempt for SILAR synthesized ZnFe_2O_4 thin film exhibited a specific capacitance of 471 Fg"−"1 at a scan rate of 5 mVs"−"1 in 1 M NaOH aqueous solution. Further, ZnFe_2O_4 solid-state symmetric (SSS) supercapacitor device demonstrated voltage window of 1.0 V with specific capacitance of 32 Fg"−"1, energy density of 4.47 Whkg"−"1 and power density of 277 Wkg"−"1 at 1 Ag"−"1 current density. Such high performance capacitive behavior indicates ZnFe_2O_4 thin film is promising and low cost electrode material towards energy storage devices for various portable electronic systems.

Kinetics and Mechanisms of Oxygen Surface Exchange on La0.6Sr0.4FeO3-delta Thin Films

OpenAIRE

Mosleh, Majid; Søgaard, Martin; Hendriksen, Peter Vang

2009-01-01

The thermodynamic properties as well as oxygen exchange kinetics were examined on mixed ionic and electronic conducting (La0.6Sr0.4)0.99FeO3− (LSF64) thin films deposited on MgO single crystals. It is found that thin films and bulk material have the same oxygen stoichiometry for a given temperature and oxygen partial pressure [i.e., the incorporation reaction has the same reaction enthalpy (H0=−105 KJ/mol) and entropy (S0=−75.5 J/mol/K) as found for bulk material]. The thin film shows smaller...

Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Youn-Jang; Kim, Jin Won; Kim, Hae Jin; Kim, Sang Su

2013-04-01

We prepared pure BiFeO3 (BFO) and (Bi0.9Eu0.1)(Fe0.975Zn0.025)O3-δ (BEFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10-6 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BEFZO thin film were 42 µC/cm2 and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 µC/cm2 and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8-10 V after 1.44 × 1010 cycles in the BEFZO thin films and were 70 ˜ 90% of the initial values. We also confirmed that the 2 P r was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.

Magnetization in permalloy thin films

Indian Academy of Sciences (India)

Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

Ferrite thin films: Synthesis, characterization and gas sensing properties towards LPG

Energy Technology Data Exchange (ETDEWEB)

Rao, Pratibha; Godbole, R.V. [Department of Physics, Abasaheb Garware College, Karve Road, Pune 411 004 (India); Phase, D.M. [UGC-DAE CSR Centre, Indore (India); Chikate, R.C. [Department of Chemistry, Abasaheb Garware College, Karve Road, Pune 411 004 (India); Bhagwat, Sunita, E-mail: smb.agc@gmail.com [Department of Physics, Abasaheb Garware College, Karve Road, Pune 411 004 (India)

2015-01-15

Nanocrystalline (Co, Cu, Ni, Zn) ferrite thin films have been deposited onto the Si (100) and alumina substrates by spray pyrolysis deposition technique. Respective metal chlorides and iron chloride were used as precursors. The structural properties of (Co, Cu, Ni, Zn) ferrite thin films were investigated by X-ray diffraction (XRD) technique which confirms polycrystalline nature and single phase spinel structure. The surface morphology was studied using scanning electron microscopy (SEM) which reveals spherical morphology for these films except NiFe{sub 2}O{sub 4} films that exhibit petal like structure. The optical transmittance and reflectance measurements were recorded using a double beam spectrophotometer. The optical studies reveal that the transition is direct band gap energy. The VSM analyzes reveal the predominant ferrimagnetic nature for CuFe{sub 2}O{sub 4} films. The gas sensing properties towards Liquid Petroleum Gas (LPG) revealed that ZnFe{sub 2}O{sub 4} films are sensitive at lower temperature while NiFe{sub 2}O{sub 4} films show steep rise at higher temperature. - Highlights: • (Co, Cu, Ni, Zn) ferrite thin films are synthesized by simple spray pyrolysis technique. • Homogenization of substituent within ferrite structure. • CuFe{sub 2}O{sub 4} film exhibits predominantly ferrimagnetic nature. • LPG sensing at lower temperature for ZnFe{sub 2}O{sub 4} film. • High sensitivity for NiFe{sub 2}O{sub 4} film at higher temperature due to defects created in the structure.

Thermomagnetically written domains in TbFeCo thin films

International Nuclear Information System (INIS)

Reim, W.; Weller, D.

1988-01-01

Characteristic features of thermomagnetically written domains in amorphous Tb x (Fe 90 Co 10 ) 100-x alloy thin films having different magnetic properties are reported. In particular, the writing process in materials with low Tb content chi ≤ 21 dominated by the demagnetizing field is compared to the bias field dominated process in Tb rich samples 22 ≤ chi ≤ 25. Domain wall movement over lateral dimensions of the bit size is found for Tb poor materials while for chi ≥ 22 domain boundaries are primarily determined by the area heated up to the Curie-temperature. The importance of mechanical stress on domain formation and irreversible changes of the storage medium due to overheating in the writing process are reported

Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

Directory of Open Access Journals (Sweden)

Kawai T.

2014-07-01

Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

Demonstration of thin film pair distribution function analysis (tfPDF for the study of local structure in amorphous and crystalline thin films

Directory of Open Access Journals (Sweden)

Kirsten M. Ø. Jensen

2015-09-01

Full Text Available By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF analysis have been obtained from thin films (tf, suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The `tfPDF' method is illustrated through studies of as-deposited (i.e. amorphous and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.

Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

International Nuclear Information System (INIS)

Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

2015-01-01

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

2007-09-15

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

International Nuclear Information System (INIS)

Kim, Sang Woo; Yoon, Chong S.

2007-01-01

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

Magnetic and structural properties of NdFeB thin film prepared by step annealing

International Nuclear Information System (INIS)

Serrona, Leo K.E.B.; Sugimura, A.; Fujisaki, R.; Okuda, T.; Adachi, N.; Ohsato, H.; Sakamoto, I.; Nakanishi, A.; Motokawa, M.

2003-01-01

The crystallization of the amorphous phase into the tetragonal Nd 2 Fe 14 B (PHI) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 μm thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H ciperp -1 and the remnant magnetization 4πM rperp -1 was developed and diffraction analysis showed evidence of PHI phase 002l peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 deg. C, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of ∼1340 kA m -1 . Annealing the film sample at 200 deg. C≤T ann ≤750 deg. C showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4πM sperpendicular values plotted against T ann , a dip in 4πM sperpendicular values was observed as T ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T ann ∼300 deg. C, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Ordering process of sputtered FePt films

International Nuclear Information System (INIS)

Takahashi, Y.K.; Ohnuma, M.; Hono, K.

2003-01-01

We have investigated the in situ ordering process of sputtered FePt thin films deposited on heated substrates at 300 deg. C with different thicknesses. The films thinner than 50 nm were composed of nanograins (∼5 nm) of disordered FePt phase. Recrystallization occurred when films were grown thicker than 100 nm, and transformation twins were observed in recrystallized grains, in which ordering to the L1 0 structure was confirmed

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jenichen, B.; Herfort, J.; Jahn, U.; Trampert, A.; Riechert, H.

2014-01-01

We demonstrate Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe 3 Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe 3 Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe 3 Si film were found. The low substrate temperature T s of 150 °C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T s (225 °C) leads to a largely [111] oriented upper Fe 3 Si layer and polycrystal films. The high T s of 325 °C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. - Highlights: • Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures are grown by MBE. • The bottom Fe 3 Si film is always single crystalline. • The properties of the Ge film depend on the substrate temperature during deposition. • Optimum growth conditions lead to almost perfect epitaxy of Ge on Fe 3 Si

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

High-coercivity FePt sputtered films

International Nuclear Information System (INIS)

Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

2005-01-01

Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

Multiple collinear magnetic arrangements in thin Mn films supported on Fe(001). Antiferromagnetic versus ferromagnetic behavior

International Nuclear Information System (INIS)

Martinez, E.; Vega, A.; Robles, R.; Vazquez de Parga, A.L.

2005-01-01

We present a theoretical study of the magnetic properties of thin Mn films of 6 and 7 monolayers supported on Fe(001). The ab-initio tight binding linear muffin tin orbital (TB-LMTO) method was used to investigate the competition between ferromagnetic (F) and antiferromagnetic (AF) couplings within the system. We found several collinear magnetic solutions that may coexist at room temperature. The most stable configurations are characterized by AF coupling between the surface and subsurface Mn layers together with F coupling between Mn and Fe at the interface. The ground state arrangements for the 6 and 7 Mn films display opposite sign of the surface magnetic moment relative to the Fe substrate. The implications of these results in the possible onset of non-collinear magnetism when a step is present at the interface are discussed in comparison with Cr/Fe systems where non-collinear magnetism has been recently reported

The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

Directory of Open Access Journals (Sweden)

A. Khanjani

2016-06-01

Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

Directory of Open Access Journals (Sweden)

P. Jiménez-Cavero

2017-02-01

Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Structural, optical and electrical properties of Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films prepared by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Khadka, Dhruba B.; Kim, JunHo, E-mail: jhk@inu.ac.kr

2015-07-25

Highlights: • CFTS(Se) thin films have been synthesized by low-cost spray-based deposition. • The fabricated films were found to be of stannite structure and p-type conductivity. • Band gaps of CFTS and CFTSe thin films are 1.37 and 1.11 eV, respectively. - Abstract: We report on fabrication of polycrystalline Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu{sub 2}FeSnS{sub 4} (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu{sub 2}FeSnS{sub 4} (CFTS) and Cu{sub 2}FeSnSe{sub 4} (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10{sup 21} cm{sup −3} and mobility ∼1–5 cm{sup 2} V{sup −1} s{sup −1}. The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be ∼1.37 eV and ∼1.11 eV with an error of ±0.02 eV by UV–Vis absorption, respectively, which are promising for photovoltaic application.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

International Nuclear Information System (INIS)

Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

2013-01-01

The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

International Nuclear Information System (INIS)

Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

2015-01-01

FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

Effect of Cu addition on coercivity and interfacial state of Nd-Fe-B/Nd-rich thin films

International Nuclear Information System (INIS)

Matsuura, M; Sugimoto, S; Fukada, T; Tezuka, N; Goto, R

2010-01-01

This study provides the effect of Cu addition on coercivity (H cJ ) and interfacial microstructure in Nd-Fe-B/Nd-rich thin films. All films were deposited by using ultra high vacuum (UHV) magnetron sputtering, and the Nd-Fe-B layer was oxidized under several atmospheres with different oxygen content. Then, the films were annealed at 250-550 0 C under UHV. The films oxidized in low vacuum (10 -2 -10 -5 Pa) (under low oxygen state) exhibited the recovery of H cJ by the annealing at 450 0 C. On the contrary, the H cJ of the films oxidized in Ar (under high oxygen state) decreased with increasing annealing temperature. However, the H cJ increased drastically at the temperatures above 550 0 C. In addition, the Cu added films, which were annealed at temperatures above 350 0 C, showed higher coercivities than the films without Cu addition. The XRD analysis suggested the existence of C-Nd 2 O 3 phase in the Cu added films annealed at 550 0 C. It can be considered that the Cu addition decreases the eutectic temperature of Nd-rich phase and influences the interfacial state between Nd 2 Fe 14 B and Nd-rich phase.

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

Science.gov (United States)

Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

Magnetoresistance anomaly in DyFeCo thin films

International Nuclear Information System (INIS)

Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.

2001-01-01

Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics

Magnetic hysteresis of cerium doped bismuth ferrite thin films

International Nuclear Information System (INIS)

Gupta, Surbhi; Tomar, Monika; Gupta, Vinay

2015-01-01

The influence of Cerium doping on the structural and magnetic properties of BiFeO 3 thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi 1−x Ce x FeO 3 (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm −1 ) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm −1 ), shows a minor shift. Sudden evolution of Raman mode at 668 cm −1 , manifested as A 1 -tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M s ) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi 0.88 Ce 0.12 FeO 3 thin film found to exhibit better magnetic properties with M s =15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi 1−x Ce x FeO 3 thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical applications of such materials exhibiting pinching behavior are conferred

Magnetic hysteresis of cerium doped bismuth ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Surbhi [Department of Physics and Astrophysics, University of Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi (India)

2015-03-15

The influence of Cerium doping on the structural and magnetic properties of BiFeO{sub 3} thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi{sub 1−x}Ce{sub x}FeO{sub 3} (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm{sup −1}) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm{sup −1}), shows a minor shift. Sudden evolution of Raman mode at 668 cm{sup −1}, manifested as A{sub 1}-tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M{sub s}) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi{sub 0.88}Ce{sub 0.12}FeO{sub 3} thin film found to exhibit better magnetic properties with M{sub s}=15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi{sub 1−x}Ce{sub x}FeO{sub 3} thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical

Size effect in the spin glass magnetization of thin AuFe films as studied by polarized neutron reflectometry.

Science.gov (United States)

Saoudi, M; Fritzsche, H; Nieuwenhuys, G J; Hesselberth, M B S

2008-02-08

We used polarized neutron reflectometry to determine the temperature dependence of the magnetization of thin AuFe films with 3% Fe concentration. We performed the measurements in a large magnetic field of 6 T in a temperature range from 295 to 2 K. For the films in the thickness range from 500 to 20 nm we observed a Brillouin-type behavior from 295 K down to 50 K and a constant magnetization of about 0.9 micro(B) per Fe atom below 30 K. However, for the 10 nm thick film we observed a Brillouin-type behavior down to 20 K and a constant magnetization of about 1.3 micro(B) per Fe atom below 20 K. These experiments are the first to show a finite-size effect in the magnetization of single spin-glass films in large magnetic fields. Furthermore, the ability to measure the deviation from the paramagnetic behavior enables us to prove the existence of the spin-glass state where other methods relying on a cusp-type behavior fail.

Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

International Nuclear Information System (INIS)

Peng, W.; Lemee, N.; Holc, J.; Kosec, M.; Blinc, R.; Karkut, M.G.

2009-01-01

We have grown lead iron niobate thin films with composition Pb(Fe 1/2 Nb 1/2 )O 3 (PFN) on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely c-axis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHM≤0.09 deg.). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nm-thick films. We also observe a correlation between grain size, surface roughness and film thickness.

Origin of open recoil curves in L1_0-A1 FePt exchange coupled nanocomposite thin film

International Nuclear Information System (INIS)

Goyal, Rajan; Kapoor, Akanksha; Lamba, S.; Annapoorni, S.

2016-01-01

Mixed phase FePt systems with intergranular coupling may be looked upon as natural exchange spring systems. The coupling strength between the soft and hard phase in these systems can be analyzed using recoil curves. However, the origin of open recoil curves depicting the breakdown of exchange coupling or anisotropy variation in hard phase is still an ambiguity and requires an in-depth analysis. In order to investigate this, an analysis of the recoil curves for L1_0–A1 FePt nanocomposite thin films of varying thickness have been performed. The switching field distribution reveals that the maximum of openness of recoil curve is directly proportional to the amount of uncoupled soft phase present in the system. The coupling between the hard and soft phase is also found to increase with the thickness of the film. Monte Carlo simulations on a model three dimensional array of interacting nanomagnetic grains provide further insight into the effect of inter granular exchange interactions between the soft and hard phases. - Highlights: • L1_0-A1 FePt nanocomposites thin films of different thickness have been fabricated by DC sputtering. • Hysteresis curve measurements exhibit perfect single phase (L1_0) like behavior for thicker films. • SFD reveals that the openness of recoil curves is directly linked with the amount of uncoupled soft (A1) phase. • Monte Carlo simulation predicts that the extent of exchange interaction increases with thickness of the film.

Magnetoelastic coupling in TbFe2 (110) thin films

International Nuclear Information System (INIS)

Ciria, M.; Arnaudas, J.I.; Dufour, C.; Oderno, V.; Dumesnil, K.; del Moral, A.

1997-01-01

We have determined the rhombohedral magnetoelastic stress of a Laves phase TbFe 2 (110) single-crystal film, grown by molecular-beam epitaxy. The film thickness was 1300 Angstrom. The magnetoelastic stress was directly measured by using a low-temperature cantilever capacitive method, between 300 and 10 K. The isotherms clearly display the coercive field but, unlike bulk alloy behavior, do not saturate even at the maximum field of 12 T. The determined rhombohedral magnetoelastic parameter of the film is B ε,2 =-0.43 GPa, at 0 K and 12 T, which is 0.67 times the value for bulk TbFe 2 . B ε,2 follows a power m 3 of the reduced magnetization m, indicating a single-ion volume origin for the rhombohedral magnetoelastic stress of this film. Measurements performed in a 300 Angstrom TbFe 2 (110) film deposited onto a YFe 2 buffer show that the coercive field is drastically lowered and that the magnetoelastic distortion is negligible. copyright 1997 American Institute of Physics

Influences of the iron ion (Fe{sup 3+})-doping on structural and optical properties of nanocrystalline TiO{sub 2} thin films prepared by sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Ben Naceur, J. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar, Batna (Algeria); Bousbih, F.; Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia)

2011-10-01

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0% to 20%. During the Fe{sup 3+} addition to 20%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe{sup 3+} content.

Comparative Review on Thin Film Growth of Iron-Based Superconductors

Directory of Open Access Journals (Sweden)

Yoshinori Imai

2017-07-01

Full Text Available Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher Tc than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F (Ln = Lanthanide, AEFe2As2 (AE = Alkaline-earth metal, FeCh (Ch = Chalcogen, and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe1-xTex which can be obtained only by using film-fabrication technique.

Nitrided FeB amorphous thin films for magneto mechanical systems

International Nuclear Information System (INIS)

Fernandez-Martinez, I.; Martin-Gonzalez, M.S.; Gonzalez-Arrabal, R.; Alvarez-Sanchez, R.; Briones, F.; Costa-Kraemer, J.L.

2008-01-01

The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe 80 B 20 target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An ∼20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate (∼8%) nitrogen content when compared to those for pure Fe 80 B 20 amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices

Pr and Gd co-doped bismuth ferrite thin films with enhanced ...

Indian Academy of Sciences (India)

in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. ... Pr and Gd co-modified BiFeO3 thin film; ferroelectric properties; sol-gel. 1. Introduction. In recent years, great attention has been paid to single- phase BiFeO3 (BFO) multiferroic materials ...

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

Structure and magnetic properties of L10-FePt thin films on TiN/RuAl underlayers

International Nuclear Information System (INIS)

Yang En; Ratanaphan, Sutatch; Zhu Jiangang; Laughlin, David E.

2011-01-01

Highly ordered L1 0 FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO 2 in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

Science.gov (United States)

Kumar, Ankit; Pan, Fan; Husain, Sajid; Akansel, Serkan; Brucas, Rimantas; Bergqvist, Lars; Chaudhary, Sujeet; Svedlindh, Peter

2017-12-01

Half-metallicity and low magnetic damping are perpetually sought for spintronics materials, and full Heusler compounds in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler compound thin films, and theory has struggled to establish a fundamental understanding of the temperature-dependent Gilbert damping in these systems. Here we present a study of the temperature-dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler compound thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states governs the Gilbert damping for the well-ordered phase, in contrast to the damping of partially ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room-temperature intrinsic damping observed for the well-ordered phase, provide fundamental insights into the physical origin of the Gilbert damping in full Heusler compound thin films.

Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

International Nuclear Information System (INIS)

Duan Zhiqiang; Wang Ruzhi; Yuan Ruiyang; Yang Wei; Wang Bo; Yan Hui

2007-01-01

Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin AlN film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering

Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

International Nuclear Information System (INIS)

Yakovlev, S.; Zekonyte, J.; Solterbeck, C.-H.; Es-Souni, M.

2005-01-01

Polycrystalline BiFeO 3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO 2 /Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

Science.gov (United States)

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

Science.gov (United States)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Preparation of Nd-doped BiFeO{sub 3} films and their electrical properties

Energy Technology Data Exchange (ETDEWEB)

Cheng Meng [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Tan Guoqiang, E-mail: tan3114@163.com [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Xue Xu; Xia Ao; Ren Huijun [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China)

2012-09-01

The Nd-doped BiFeO{sub 3} thin films were prepared on SnO{sub 2}(FTO) substrates spin-coated by the sol-gel method using Nd(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O, Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O and Bi(NO{sub 3}){sub 3}{center_dot}5H{sub 2}O as raw materials. The microstructure and electric properties of the BiFeO{sub 3} thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO{sub 3} films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} films gives rise to the largest Pr of 64 {mu}C/cm{sup 2}. The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} thin film at 10 kHz are 190 and 0.017 respectively.

Origin of open recoil curves in L1{sub 0}-A1 FePt exchange coupled nanocomposite thin film

Energy Technology Data Exchange (ETDEWEB)

Goyal, Rajan [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Kapoor, Akanksha [M. Tech Nanoscience and Nanotechnology, University of Delhi, Delhi 110007 (India); Lamba, S. [School of Sciences, Indira Gandhi National Open University, New Delhi 110068 (India); Annapoorni, S., E-mail: annapoornis@yahoo.co.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2016-11-15

Mixed phase FePt systems with intergranular coupling may be looked upon as natural exchange spring systems. The coupling strength between the soft and hard phase in these systems can be analyzed using recoil curves. However, the origin of open recoil curves depicting the breakdown of exchange coupling or anisotropy variation in hard phase is still an ambiguity and requires an in-depth analysis. In order to investigate this, an analysis of the recoil curves for L1{sub 0}–A1 FePt nanocomposite thin films of varying thickness have been performed. The switching field distribution reveals that the maximum of openness of recoil curve is directly proportional to the amount of uncoupled soft phase present in the system. The coupling between the hard and soft phase is also found to increase with the thickness of the film. Monte Carlo simulations on a model three dimensional array of interacting nanomagnetic grains provide further insight into the effect of inter granular exchange interactions between the soft and hard phases. - Highlights: • L1{sub 0}-A1 FePt nanocomposites thin films of different thickness have been fabricated by DC sputtering. • Hysteresis curve measurements exhibit perfect single phase (L1{sub 0}) like behavior for thicker films. • SFD reveals that the openness of recoil curves is directly linked with the amount of uncoupled soft (A1) phase. • Monte Carlo simulation predicts that the extent of exchange interaction increases with thickness of the film.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

International Nuclear Information System (INIS)

Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

2014-01-01

Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Jung-Sheng Huang

2014-01-01

Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

A novel selenization technique for fabrication of superconducting FeSex thin film

International Nuclear Information System (INIS)

Chai Qinglin; Tu Hailing; Hua Zhiqiang; Wang Lei; Qu Fei

2011-01-01

A novel selenization technique was applied to prepare superconducting FeSe x films with pre-set FeS films. The combination of reactive sputtering deposition with elemental diffusion technique would extend to prepare films of other iron-based superconductors. The results of transport measurement got close or greater than that of previous reports. T c,onset and T c,0 got to 10.2 K and 4 K respectively. We believe that increase of the content of Fe 7 Se 8 could not only reduce T c but also slow down the decline of resistivity. A combinative method with reactive sputtering deposition and selenization technique was applied to prepare superconducting FeSe x films on LaAlO 3 substrates successfully. The influence of selenizing temperature on film components was studied. FeSe 0.96 and FeSe films had similar and good performances in transport measurement but little difference in magnetic property. The critical onset temperature got to 11.2 K and T c,0 got to 4 K approximately. X-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy were used to analyze the ratio of constituents and morphology of several selenized films. FeSe x film had a porous structure on surface and no well preferred orientation, which were confirmed to have little influence on superconducting properties.

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

Science.gov (United States)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

Unraveling the magnetic properties of BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Vinai, G.; Petrov, A. Yu.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Khare, A. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Department of Physics, Sungkyunkwan University, Suwon 440 746 (Korea, Republic of); Rana, D. S. [Department of Physics, Indian Institute of Science Education and Research Bhopal, Govindpura, Bhopal 462023 (India); Di Gennaro, E.; Scotti di Uccio, U.; Miletto Granozio, F. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Gobaut, B. [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Moroni, R. [CNR-SPIN, Corso Perrone 24, I-16152 Genova (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Department of Physics, Università degli Studi di Milano, via Celoria 16, I-20133 Milano (Italy)

2015-11-01

We investigate the structural, chemical, and magnetic properties on BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO{sub 3} (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

Structural and superconducting properties of epitaxial Fe{sub 1+y}Se{sub 1-x}Te{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan; Yuan, Feifei; Grinenko, Vadim; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Sala, Alberto; Putti, Marina [Dipartimento di Fisica, Universita di Genova (Italy)

2015-07-01

The iron based superconductor Fe(Se,Te) is in the center of much ongoing research. The reason for this is on the one hand its simple crystal structure, that consists only of stacked Fe(Se,Te) layers so that structural and superconducting properties can be connected more easily, on the other hand FeSe itself shows a high sensibility for strain and changes in stoichiometry and can have potentially very high critical temperatures under hydrostatic pressure or in monolayers. We investigate epitaxial thin films of Fe{sub 1+y}Se{sub 1-x}Te{sub x} grown by pulsed laser deposition on different single crystalline substrates. A high crystalline quality and a superconducting transition of up to about 20 K can be achieved using optimized deposition parameters. The influence of growth conditions, Te-doping, film thickness and post growth oxygen treatment on the structural and superconducting properties on these films will be presented in detail.

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

Science.gov (United States)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Soft magnetic properties of hybrid ferromagnetic films with CoFe, NiFe, and NiFeCuMo layers

Energy Technology Data Exchange (ETDEWEB)

Choi, Jong-Gu [Eastern-western Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of); Hwang, Do-Guwn [Dept. of Oriental Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of); Rhee, Jang-Roh [Dept. of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of); Lee, Sang-Suk, E-mail: sslee@sangji.ac.kr [Dept. of Oriental Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of)

2011-09-30

Two-layered ferromagnetic alloy films (NiFe and CoFe) with intermediate NiFeCuMo soft magnetic layers of different thicknesses were investigated to understand the relationship between coercivity and magnetization process by taking into account the strength of hard-axis saturation field. The thickness dependence of H{sub EC} (easy-axis coercivity), H{sub HS} (hard-axis saturation field), and {chi} (susceptibility) of the NiFeCuMo thin films in glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared using the ion beam deposition method was determined. The magnetic properties (H{sub EC}, H{sub HS}, and {chi}) of the ferromagnetic CoFe, NiFe three-layers with an intermediate NiFeCuMo super-soft magnetic layer were strongly dependent on the thickness of the NiFeCuMo layer.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang

2012-12-28

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

Raman scattering in La1-xSrxFeO3-δ thin films: annealing-induced reduction and phase transformation

Science.gov (United States)

Islam, Mohammad A.; Xie, Yujun; Scafetta, Mark D.; May, Steven J.; Spanier, Jonathan E.

2015-04-01

Raman scattering in thin film La0.2Sr0.8FeO3-δ on MgO(0 0 1) collected at 300 K after different stages of annealing at selected temperatures T (300 K topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms.

Magnetic surface domain imaging of uncapped epitaxial FeRh(001) thin films across the temperature-induced metamagnetic transition

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xianzhong; Matthes, Frank; Bürgler, Daniel E., E-mail: d.buergler@fz-juelich.de; Schneider, Claus M. [Peter Grünberg Institut, Electronic Properties (PGI-6) and Jülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich (Germany)

2016-01-15

The surface magnetic domain structure of uncapped epitaxial FeRh/MgO(001) thin films was imaged by in-situ scanning electron microscopy with polarization analysis (SEMPA) at various temperatures between 122 and 450 K. This temperature range covers the temperature-driven antiferromagnetic-to-ferromagnetic phase transition in the body of the films that was observed in-situ by means of the more depth-sensitive magneto-optical Kerr effect. The SEMPA images confirm that the interfacial ferromagnetism coexisting with the antiferromagnetic phase inside the film is an intrinsic property of the FeRh(001) surface. Furthermore, the SEMPA data display a reduction of the in-plane magnetization occuring well above the phase transition temperature which, thus, is not related to the volume expansion at the phase transition. This observation is interpreted as a spin reorientation of the surface magnetization for which we propose a possible mechanism based on temperature-dependent tetragonal distortion due to different thermal expansion coefficients of MgO and FeRh.

Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

Directory of Open Access Journals (Sweden)

Yongqi Liang

2008-01-01

Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

Influence of temperature on thermoelectric properties of Fe{sub x}Co{sub 1−x}S{sub 2} thin films: A semiconductor to semimetal conversion

Energy Technology Data Exchange (ETDEWEB)

Clamagirand, J.M.; Ares, J.R., E-mail: joser.ares@uam.es; Flores, E.; Diaz-Chao, P.; Leardini, F.; Ferrer, I.J.; Sánchez, C.

2016-02-01

In this work, we investigate the thermoelectric properties of p and n-type thin films obtained by cobalt doping of FeS{sub 2}. Films were synthesized by direct sulfuration of Co–Fe thin bilayers at 300 °C. It is found that at room temperature (RT), the Seebeck coefficient is reduced from 80 μV/K to − 70 μV/K when Co concentration is increased and the electrical resistivity of the films is decreased two orders of magnitude. X-ray diffraction and Raman measurements point out that Co is replacing Fe into the pyrite lattice and, subsequently is promoting a semiconductor to semimetal conversion. The influence of temperature on transport properties of different Fe{sub x}Co{sub 1−x}S{sub 2} films has been investigated. Whereas the Seebeck coefficient is hardly modified, the film resistivity is drastically decreased when temperature increases what has been attributed to the thermal activation of electrical carriers. The influence of Co doping on the band scheme of FeS{sub 2} is shown. To this aim, donor and acceptor states are included into its forbidden gap. Whereas the band scheme of FeS{sub 2} exhibits an acceptor level with an E = 0.11 ± 0.03 eV above the top of the valence band due to iron vacancies, a wide donor level close to the bottom of the conduction band (E = 0.08 ± 0.05 eV) is created by the progressive replacement of iron by cobalt into the FeS{sub 2} lattice. - Highlights: • Thermoelectric properties of pyrite and Co-doped pyrite thin films were measured. • Whereas ρ decreases, S remains practically unaltered on increasing temperature (RT-300 °C). • On increasing Co-concentration, films exhibit a p semiconductor to n type semimetal conversion. • Donor states close to the botton of the conduction band are created by Co doping. • Energy of the donor level decreases and gets wider due to Co-concentration.

Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

Science.gov (United States)

Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

1995-06-01

The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

Magnetic and superconductivity studies on (In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sai Krishna, N. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603 104, Tamil Nadu (India); Madhusudhana Rao, N.; Krishnamoorthi, C.; Rigana Begam, M. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Omkaram, I. [Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si Gyeonggi-do 446-701 (Korea, Republic of); Sreekantha Reddy, D. [Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-15

Highlights: • Fe doped In{sub 2}O{sub 3} thin films deposited using electron beam evaporation technique. • Characterization of the samples using XRD, SEM, EDAX, AES, Raman spectroscopy, FT-IR, VSM and magnetoresistance. • All Fe doped In{sub 2}O{sub 3} thin films exhibited the cubic structure of In{sub 2}O{sub 3}. • Pure and Fe doped In{sub 2}O{sub 3} samples exhibited room temperature ferromagnetism and superconductivity at 2 K. - Abstract: Magnetic, magnetoresistivity and superconductivity studies were carried out on (In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} (x = 0.00, 0.03, 0.05 and 0.07) thin films (2D structures) grown on glass substrate by electron beam evaporation technique at 350 °C. The films have an average size of 120 nm particles. All the samples shown soft ferromagnetic hysteresis loops at room temperature and saturation magnetization increased with iron dopant concentration. Observed magnetization could be best interpreted by F-center mediated magnetic exchange interaction in the samples. Temperature dependent resistivity of the sample (x = 0.00 and 0.07) showed metallic behavior down to very low temperatures and superconductivity at 2 K for undoped In{sub 2}O{sub 3} whereas the In{sub 1.86}Fe{sub 0.14}O{sub 3} sample shows superconductivity below 2 K in the absence of magnetic fields. The reduction in transition temperature was attributed to increase electrical disorder with iron doping. Both samples showed positive magnetoresistivity (MR) in superconducting state due to increase of resistivity resulting from breaking of superconducting Cooper pairs upon application of magnetic field. In addition, both the samples show feeble negative MR in normal electrical state. The observed MR in normal state is not due to spin polarized tunneling instead it is due to suppression of scattering of charge carrier by single occupied localized states.

Tailoring the magnetic properties and thermal stability of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Peng, Long; Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

2017-05-01

In this study, we systematically investigate the dynamic magnetic properties of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering technique with respect to temperature ranging from 300 K to 420 K. The magnetic anisotropy field H{sub K} and ferromagnetic resonance frequency f{sub FMR} can be tuned from 14.06 to 110.18 Oe and 1.05–3.05 GHz respectively, by changing the oblique angle, which can be interpreted in terms of the contribution of stress-induced anisotropy and shape anisotropy. In addition, the thermal stability of FeSiAl-Al{sub 2}O{sub 3} films in terms of magnetic anisotropy H{sub K} and ferromagnetic resonance frequency f{sub FMR} are enhanced with the increase of oblique angle up to 35° while the thermal stability of effective Gilbert damping factor α{sub eff} and the maximum imaginary permeability μ’’{sub max} are improved with the increase of oblique angle up to 45°. - Highlights: • We prepared FeSiAl-based thin films using hybrid oblique gradient-composition deposition technique. • The microwave properties of FeSiAl-based thin films were systematically studied. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The permeabilities were got using shorted micro-strip transmission-line perturbation. • The thermal stability of properties we studied is relatively good.