Low energy electron beam processing of YBCO thin films

Energy Technology Data Exchange (ETDEWEB)

Chromik, Š., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Camerlingo, C. [CNR-SPIN, Istituto Superconduttori, Materiali Innovativi e Dispositivi, via Campi Flegrei 34, 80078 Pozzuoli (Italy); Sojková, M.; Štrbík, V.; Talacko, M. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Malka, I.; Bar, I.; Bareli, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Jung, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)

2017-02-15

Highlights: • Improvement of superconducting properties of irradiated bridges under certain conditions. • 30 keV irradiation influence CuO{sub 2} planes as well as oxygen chains. • Direct confirmation of changes in oxygen chains using micro-Raman spectroscopy. • Possibility of electron writing. - Abstract: Effects of low energy 30 keV electron irradiation of superconducting YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 − 4 × 10{sup 20} electrons/cm{sup 2}, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 10{sup 20} electrons/cm{sup 2}. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cu−O chains that results in increased carrier’s concentration in superconducting CuO{sub 2} planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

Science.gov (United States)

Schroeder, Herbert

2015-06-01

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

Quantum-classical transition in the electron dynamics of thin metal films

International Nuclear Information System (INIS)

Jasiak, R; Manfredi, G; Hervieux, P-A; Haefele, M

2009-01-01

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy ℎω p ), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

International Nuclear Information System (INIS)

Schroeder, Herbert

2015-01-01

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F 1/2 ) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different

Quantum-classical transition in the electron dynamics of thin metal films

Energy Technology Data Exchange (ETDEWEB)

Jasiak, R; Manfredi, G; Hervieux, P-A [Institut de Physique et Chimie des Materiaux, CNRS and Universite de Strasbourg, BP 43, F-67034 Strasbourg (France); Haefele, M [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)], E-mail: Giovanni.Manfredi@ipcms.u-strasbg.fr

2009-06-15

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy {Dirac_h}{omega}{sub p}), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Current density monitor for intense relativistic electron beams

International Nuclear Information System (INIS)

Fiorito, R.B.; Raleigh, M.; Seltzer, S.M.

1986-01-01

We describe a new type of electric probe which is capable of measuring the time-resolved current density profile of a stable, reproducible, high-energy (>4-MeV) high-current (>1-kA) electron beam. The sensing element of this probe is an open-ended but capped-off 50-Ω coaxial line constructed of graphite. The graphite sensor is 4.3 mm in diameter, 6 cm long, and is range thin to the primary beam electrons. The probe produces a signal proportional to the intercepted beam current. When the sensor is scanned radially through the beam during repeated pulses, a curve of signal versus depth of insertion is produced from which the radial current density profile can be determined. Measurements are presented of the profile of the electron beam from the Experimental Test Accelerator (4.5 MeV, 10 kA) at Lawrence Livermore National Laboratory. Good agreement is shown between measurements made with this probe and the beam radius as predicted by transport codes. The advantage of the electric probe lies in its ruggedness, simplicity, inherent fast rise time, and low cost. In contrast to other systems it requires no radiation shielding, water cooling, or auxiliary support equipment to operate in an intense beam environment

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

International Nuclear Information System (INIS)

Kijima, Toshiyuki; Nakase, Yoshiaki

1993-01-01

Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

Experimental observations of the tearing of an electron current sheet

International Nuclear Information System (INIS)

Gekelman, W.; Pfister, H.

1988-01-01

A neutral magnetic sheet, in which the current is carried mainly by the electrons, is set up in a laboratory plasma. By forcing the current through a thin slot, the ratio of the length to height t of the sheet may be varied; the current is observed to tear when tapprox. >30. The structure of the magnetic islands and their associated currents is fully three dimensional, although a linear two-dimensional theory gives a very good estimate of the tearing mode growth time. Tearing is accompanied by the generation of significant Hall currents, and magnetic disturbances are observed to propagate at the whistler wave speed

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

Science.gov (United States)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Defects in CdSe thin films, induced by high energy electron irradiation

International Nuclear Information System (INIS)

Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

2004-01-01

Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

Influences of arc current on composition and properties of MgO thin films prepared by cathodic vacuum arc deposition

International Nuclear Information System (INIS)

Zhu Daoyun; Zheng Changxi; Wang Mingdong; Liu Yi; Chen Dihu; He Zhenhui; Wen Lishi; Cheung, W.Y.

2010-01-01

MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique. With the increase of arc current from 40 to 80 A, the deposition pressure decreases and the film thickness increases; the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 0.97 to 1.17, giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO; the grains of MgO thin films grow gradually as shown in SEM images. XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A. The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A. The secondary electron emission coefficient of MgO thin film increases with arc current ranged from 50 to 70 A.

Electrochemical Thinning for Anodic Aluminum Oxide and Anodic Titanium Oxide

Energy Technology Data Exchange (ETDEWEB)

Lee, In Hae; Jo, Yun Kyoung; Kim, Yong Tae; Tak, Yong Sug; Choi, Jin Sub [Inha University, Incheon (Korea, Republic of)

2012-05-15

For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

Photodiode Based on CdO Thin Films as Electron Transport Layer

Science.gov (United States)

Soylu, M.; Kader, H. S.

2016-11-01

Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

Directory of Open Access Journals (Sweden)

Yuhang SUN

2015-08-01

Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

Application of electron accelerator for thin film in Indonesia

International Nuclear Information System (INIS)

Danu, Sugiarto; Darsono, Dadang

2004-01-01

Electron accelerator is widely used for the crosslinking of wire and cable insulation, the treatment of heat shrinkable products, precuring of tire components, and the sterilization of medical products. Research and development the use of electron accelerator for thin film in Indonesia covered radiation curing of surface coating, crosslinking of poly (butylenes succinate), crosslinking of wire, cable and heat shrinkable, sterilization of wound dressing, and prevulcanization of tire. In general, comparing with conventional method, electron beam processing have some advantages, such as, less energy consumption, much higher production rate, processing ability at ambient temperature and environmental friendly. Indonesia has a great potential to develop the application of electron accelerator, due to the remarkable growth industrial sector, the abundant of natural resources and the increasing demand of the high quality products. This paper describes the activities concerning with R and D, and application of electron accelerator for processing of thin film. (author)

Electron-beam deposition of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

2013-06-15

Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

Thin tube testing by eddy currents

International Nuclear Information System (INIS)

David, Bernard; Pigeon, Michel

1981-01-01

It is often necessary to define test conditions in eddy current testing, in consequence rules and laws allowing a rapid choice of these conditions are welcome. The similarity law, given by Forster, using the reduced frequency f/fg, allows extrapolation of results from an object to one another, if these two objects are similar (i.e. all their dimensions are proportional). In a particular case, often met, a law going further is given to describe, in a sole way, eddy current behaviour using the reduced frequency in all thin tubes (internal to external diameter ratio between 0.85 to 1). For instance working at f/fe=2 defines the same verification leading to identical results, whatever the nature, the diameter or the thickness may be, if the tubes are thin. A diagram is given and a slide-rule, based on this principle, has been realized [fr

Studies of electronic and magnetic properties of LaVO3 thin film

Science.gov (United States)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Thin-layer electrochemistry of ferrocenylbenzene derivatives: Intramolecular electronic communication

International Nuclear Information System (INIS)

Wang, Michael C.P.; Li Yunchao; Merbouh, Nabyl; Yu, Hua-Zhong

2008-01-01

Three arylferrocene derivatives, ferrocenylbenzene (MFcB), 1,3-diferrocenylbenzene (DFcB), and 1,3,5-triferrocenylbenzene (TFcB), were prepared and their redox properties systematically explored by thin-layer cyclic voltammetry (CV) and differential-pulse voltammetry (DPV). In contrast to conventional CV measurements that produced only a single pair of redox waves for all three compounds, the thin-layer technique discriminated between the multistep electron-transfer processes of DFcB and TFcB. In particular, two and three pairs of symmetric peaks were observed, respectively, when CV curves were recorded at a graphite electrode coated with a DFcB-containing and a TFcB-containing thin film of nitrobenzene and immersed in aqueous sodium perchlorate solution. These results demonstrate that the ferrocenyl moieties attached to the meta-positions of a benzene ring communicate electronically with each other, as a result of their distinct face-to-face orientations

Charging of carbon thin films in scanning and phase-plate transmission electron microscopy

DEFF Research Database (Denmark)

Hettler, Simon; Kano, Emi; Dries, Manuel

2018-01-01

A systematic study on charging of carbon thin films under intense electron-beam irradiation was performed in a transmission electron microscope to identify the underlying physics for the functionality of hole-free phase plates. Thin amorphous carbon films fabricated by different deposition techni...

Sausage mode instability of thin current sheets as a cause of magnetospheric substorms

Directory of Open Access Journals (Sweden)

J. Büchner

Full Text Available Observations have shown that, prior to substorm explosions, thin current sheets are formed in the plasma sheet of the Earth's magnetotail. This provokes the question, to what extent current-sheet thinning and substorm onsets are physically, maybe even causally, related. To answer this question, one has to understand the plasma stability of thin current sheets. Kinetic effects must be taken into account since particle scales are reached in the course of tail current-sheet thinning. We present the results of theoretical investigations of the stability of thin current sheets and about the most unstable mode of their decay. Our conclusions are based upon a non-local linear dispersion analysis of a cross-magnetic field instability of Harris-type current sheets. We found that a sausage-mode bulk current instability starts after a sheet has thinned down to the ion inertial length. We also present the results of three-dimensional electromagnetic PIC-code simulations carried out for mass ratios up to M_i / m_e=64. They verify the linearly predicted properties of the sausage mode decay of thin current sheets in the parameter range of interest.

Key words. Magnetospheric physics (plasma waves and instabilities; storms and substorms · Space plasma physics (magnetic reconnection

Adhesion-governed buckling of thin-film electronics on soft tissues

Directory of Open Access Journals (Sweden)

Bo Wang

2016-01-01

Full Text Available Stretchable/flexible electronics has attracted great interest and attention due to its potentially broad applications in bio-compatible systems. One class of these ultra-thin electronic systems has found promising and important utilities in bio-integrated monitoring and therapeutic devices. These devices can conform to the surfaces of soft bio-tissues such as the epidermis, the epicardium, and the brain to provide portable healthcare functionalities. Upon contractions of the soft tissues, the electronics undergoes compression and buckles into various modes, depending on the stiffness of the tissue and the strength of the interfacial adhesion. These buckling modes result in different kinds of interfacial delamination and shapes of the deformed electronics, which are very important to the proper functioning of the bio-electronic devices. In this paper, detailed buckling mechanics of these thin-film electronics on elastomeric substrates is studied. The analytical results, validated by experiments, provide a very convenient tool for predicting peak strain in the electronics and the intactness of the interface under various conditions.

Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

DEFF Research Database (Denmark)

McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

1975-01-01

Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

Monte Carlo transport of electrons and positrons through thin foils

International Nuclear Information System (INIS)

Legarda, F.; Idoeta, R.

2000-01-01

In the different measurements made with electrons traversing matter it becomes useful the knowledge of its transmission through that medium, their paths and their angular distribution through matter so as to process and get information about the traversed medium and to improve and innovate the techniques that employ electrons, as medical applications or materials irradiation. This work presents a simulation of the transport of beams of electrons and positrons through thin foils using an analog Monte Carlo code that simulates in a detailed way every electron movement or interaction in matter. As those particles penetrate thin absorbers it has been assumed that they interact with matter only through elastic scattering, with negligible energy loss. This type of interaction has been described quite precisely because its angular form influences very much the angular distribution of electrons and positrons in matter. With this code it has been calculated the number of particles, with energies between 100 and 3000 keV, that are transmitted through different media of various thicknesses as well as its angular distribution, showing a good agreement with experimental data. The discrepancies are less than 5% for thicknesses lower than about 30% of the corresponding range in the tested material. As elastic scattering is very anisotropic, angular distributions resemble a collimated incident beam for very thin foils becoming slowly more isotropic when absorber thickness is increased. (author)

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-López, Manuel Angel Quevedo

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

2011-01-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Imaging of current distributions in superconducting thin film structures; Abbildung von Stromverteilungen in supraleitenden Duennfilmstrukturen

Energy Technology Data Exchange (ETDEWEB)

Doenitz, D.

2006-10-31

Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tuebingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Principles of electron backscattering by solids and thin films

International Nuclear Information System (INIS)

Niedrig, H.

1977-01-01

The parameters concerning the electron backscattering from thin films and solids (atomic scattering cross-section, atomic number, single/multiple scattering, film thickness of self-supporting films and of surface films on bulk substrates, scattering angular distribution, angle of incidence, diffraction effects) are described. Their influence on some important contrast mechanisms in scanning electron microscopy (thickness contrast, Z/material contrast, tilting/topography contrast, orientation contrast) is discussed. The main backscattering electron detection systems are briefly described. (orig.) [de

Determination of low-energy ion-induced electron yields from thin carbon foils

International Nuclear Information System (INIS)

Allegrini, Frederic; Wimmer-Schweingruber, Robert F.; Wurz, Peter; Bochsler, Peter

2003-01-01

Ion beams crossing thin carbon foils can cause electron emission from the entrance and exit surface. Thin carbon foils are used in various types of time-of-flight (TOF) mass spectrometers to produce start pulses for TOF measurements. The yield of emitted electrons depends, among other parameters, on the energy of the incoming ion and its mass, and it has been experimentally determined for a few projectile elements. The electron emission yield is of great importance for deriving abundance ratios of elements and isotopes in space plasmas using TOF mass spectrometers. We have developed a detector for measuring ion-induced electron yields, and we have extended the electron yield measurements for oxygen to energies relevant for solar wind research. We also present first measurements of the carbon foil electron emission yield for argon and iron in the solar wind energy range

Relativistic electron beam interaction with a thin target

International Nuclear Information System (INIS)

Gazaix, M.

1981-03-01

This study is concerned with the increasing possibilities of electron energy deposition in thin targets. The thesis theoretical part studies the relativistic electron beam-plasma instability; the Buneman-Pierce instability in limited medium is also studied. In the experimental part, several questions are tentatively answered: - what is the spatial and temporal evolution of the anode material, in temperature and in density. - What sort of interaction is the beam-target interaction; more particularly questions about focusing and energy deposition are studied [fr

Direct Reconstruction of Two-Dimensional Currents in Thin Films from Magnetic-Field Measurements

Science.gov (United States)

Meltzer, Alexander Y.; Levin, Eitan; Zeldov, Eli

2017-12-01

An accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low-dimensional materials and interfaces, of superconducting thin films, and of electronic devices. Current distribution is usually derived from the measurement of the perpendicular component of the magnetic field above the surface of the sample, followed by numerical inversion of the Biot-Savart law. The inversion is commonly obtained by deriving the current stream function g , which is then differentiated in order to obtain the current distribution. However, this two-step procedure requires filtering at each step and, as a result, oversmooths the solution. To avoid this oversmoothing, we develop a direct procedure for inversion of the magnetic field that avoids use of the stream function. This approach provides enhanced accuracy of current reconstruction over a wide range of noise levels. We further introduce a reflection procedure that allows for the reconstruction of currents that cross the boundaries of the measurement window. The effectiveness of our approach is demonstrated by several numerical examples.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Low field leakage current on ultra-thin gate oxides after ion or electron beam irradiations; Courant de fuite aux champs faibles d'oxydes ultra-minces apres irradiations avec des faisceaux d'ions et d'electrons

Energy Technology Data Exchange (ETDEWEB)

Ceschia, M.; Paccagnella, A.; Sandrin, S. [Universita di Padova, Dipt. di Elettronica e Informatica, Padova (Italy); Paccagnella, A. [Istituto Nazionale per la Fisica della Materia, INFM, Unita di Padova (Italy); Ghidini, G. [ST-Microelectronics, Agrate Brianza (Italy); Wyss, J. [Universita di Padova, Dipt. di Fisica, Padova (Italy)

1999-07-01

In contemporary CMOS 0.25-{mu}m technologies, the MOS gate oxide (thickness {approx_equal} 5 nm) shows a low-field leakage current after radiation stresses, i.e. the radiation induced leakage current (RILC). RILC is generally attributed to a trap assisted tunneling (TAT) of electrons through neutral oxide traps generated by radiation stress. RILC has been investigated on ultra-thin oxides irradiated with 158 MeV {sup 28}Si ions or 8 MeV electrons. 3 main results are worth being quoted: 1) ion or electron beam irradiation can produce RILC with similar characteristics. Even the dose dependence of RILC is similar in the 2 cases, despite the large LET difference (about a factor of 10{sup +4}), 2) RILC is not a constant as a function of time, it tends to decrease when an oxide field (few MV/cm) is applied for (tens of) thousands seconds. On the other hand, RILC stays constant in devices kept at low bias, and 3) if a pulsed gate voltage is applied during irradiation, RILC is reduced with respect to the zero-field case. (A.C.)

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Fábio F. Vidor

2015-07-01

Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

OpenAIRE

Matsushima, Toshinori; Adachi, Chihaya

2008-01-01

We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

PVD processes of thin films deposition using Hall-current discharge

International Nuclear Information System (INIS)

Svadkovskij, I.V.

2007-01-01

Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

Thin current sheets observation by MMS during a near-Earth's magnetotail reconnection event

Science.gov (United States)

Nakamura, R.; Varsani, A.; Nakamura, T.; Genestreti, K.; Plaschke, F.; Baumjohann, W.; Nagai, T.; Burch, J.; Cohen, I. J.; Ergun, R.; Fuselier, S. A.; Giles, B. L.; Le Contel, O.; Lindqvist, P. A.; Magnes, W.; Schwartz, S. J.; Strangeway, R. J.; Torbert, R. B.

2017-12-01

During summer 2017, the four spacecraft of the Magnetospheric Multiscale (MMS) mission traversed the nightside magnetotail current sheet at an apogee of 25 RE. They detected a number of flow reversal events suggestive of the passage of the reconnection current sheet. Due to the mission's unprecedented high-time resolution and spatial separation well below the ion scales, structure of thin current sheets is well resolved both with plasma and field measurements. In this study we examine the detailed structure of thin current sheets during a flow reversal event from tailward flow to Earthward flow, when MMS crossed the center of the current sheet . We investigate the changes in the structure of the thin current sheet relative to the X-point based on multi-point analysis. We determine the motion and strength of the current sheet from curlometer calculations comparing these with currents obtained from the particle data. The observed structures of these current sheets are also compared with simulations.

Studies on the high electronic energy deposition in polyaniline thin films

International Nuclear Information System (INIS)

Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

2008-01-01

We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

ZnO Thin Film Electronics for More than Displays

Science.gov (United States)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

Energy Technology Data Exchange (ETDEWEB)

Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

2015-01-25

Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

Thin film eddy current impulse deicer

Science.gov (United States)

Smith, Samuel O.; Zieve, Peter B.

1990-01-01

Two new styles of electrical impulse deicers has been developed and tested in NASA's Icing Research Tunnel. With the Eddy Current Repulsion Deicing Boot (EDB), a thin and flexible spiral coil is encapsulated between two thicknesses of elastomer. The coil, made by an industrial printed circuit board manufacturer, is bonded to the aluminum aircraft leading edge. A capacitor bank is discharged through the coil. Induced eddy currents repel the coil from the aluminum aircraft structure and shed accumulated ice. A second configuration, the Eddy Current Repulsion Deicing-Strip (EDS) uses an outer metal erosion strip fastened over the coil. Opposite flowing eddy currents repel the strip and create the impulse deicing force. The outer strip serves as a surface for the collection and shedding of ice and does not require any structural properties. The EDS is suitable for composite aircraft structures. Both systems successfully dispelled over 95 percent of the accumulated ice from airfoils over the range of the FAA icing envelope.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram; Nath, Digbijoy N. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Khurgin, Jacob B. [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2016-05-09

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

Science.gov (United States)

Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2018-03-01

Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

Front and backside processed thin film electronic devices

Science.gov (United States)

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Tailoring electronic structure of polyazomethines thin films

OpenAIRE

J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

2010-01-01

Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

Balancing hole and electron conduction in ambipolar split-gate thin-film Transistors

NARCIS (Netherlands)

Yoo, H.; Ghittorelli, M.; Lee, D.-K.; Smits, E.C.P.; Gelinck, G.H.; Ahn, H.; Lee, H.-K.; Torricelli, F.; Kim, J.-J.

2017-01-01

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film

Evaluation on current-limiting performance of the YBCO thin-film wire considering electric coupling condition

International Nuclear Information System (INIS)

Du, H.-I.; Han, B.-S.; Kim, Y.-J.; Lee, D.-H.; Song, S.-S.; Han, T.-H.; Han, S.-C.

2011-01-01

The basic way to improve the performance of a superconducting current limiter is to apply and evaluate a superconducting device that is appropriate to the superconducting current limiter. Among the many types of superconducting devices, the YBCO thin film wire has excellent current-limiting performance that is appropriate for actual system application. For the application of the YBCO thin film wire to superconducting current limiters, its current-limiting performance as a unit device must be accurately evaluated, and measures to improve its current-limiting performance must be sought. Accordingly, to evaluate the current-limiting performance of the YBCO thin film wire, this study was conducted to evaluate its resistance-increasing trend, V max , T r , I max , I qt , and current-limiting rate as a unit device, after which the electric coupling condition that consists of a core and windings was used to evaluate the current-limiting performance of the YBCO thin film wire.

The applications of electron accelerator. Liquid, thin film and gases

International Nuclear Information System (INIS)

Khairul Zaman Hj Mohd Dahlan; Kamaruddin Hashim; Zulkafli Ghazali

2004-01-01

As indicated by the results of this study, low energy electron beam accelerator of 200 keV to 500 keV can be utilized to irradiate thin hydrogel film in the range of 60 to 500 μm thickness. However, the industrial applications of this technology will depend on its applications. For thin films, cosmetic use such as faced mask is possible. The production of sago hydrogel for cosmetic used is in the process of commercialization in Malaysia. As for electron beam treatment of industrial wastewater in particular the effluent from the textile industry is still at infancy. Further work is necessary in order to have a base line data before the commercialization is taken place. Malaysia has also embarked on the electron beam treatment of flue gases and has completed the semi-pilot scale study by using 1.0 MeV electron accelerator voltage and 400 cum flue gas generated from diesel generator. This study was conducted together with the TNB Research, the research institute belongs to the electrical power company in Malaysia. For technology transfer and commercialization, MINT is planned to promote this technology to Independent Power Producers (IPP) in Malaysia. (author)

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

Science.gov (United States)

Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

2016-02-18

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

Preparation of TiO2-based nanotubes/nanoparticles composite thin film electrodes for their electron transport properties

International Nuclear Information System (INIS)

Zhao, Wanyu; Fu, Wuyou; Chen, Jingkuo; Li, Huayang; Bala, Hari; Wang, Xiaodong; Sun, Guang; Cao, Jianliang; Zhang, Zhanying

2015-01-01

The composite thin film electrodes were prepared with one-dimensional (1D) TiO 2 -B nanotubes (NTs) and zero-dimensional TiO 2 nanoparticles (NPs) based on different weight ratios. The electron transport properties of the NTs/NPs composite thin film electrodes applied for dye-sensitized solar cells had been investigated systematically. The results indicated that although the amount of dye adsorption decreased slightly, the devices with the NTs/NPs composite thin film electrodes could obtain higher open-circuit voltage and overall conversion efficiency compared to devices with pure TiO 2 NPs electrodes by rational tuning the weight ratio of TiO 2 -B NTs and TiO 2 NPs. When the weight ratio of TiO 2 -B NTs in the NTs/NPs composite thin film electrodes increased, the density of states and recombination rate decreased. The 1D structure of TiO 2 -B NTs can provide direct paths for electron transport, resulting in higher electron lifetime, electron diffusion coefficient and electron diffusion length. The composite thin film electrodes possess the merits of the rapid electron transport of TiO 2 -B NTs and the high surface area of TiO 2 NPs, which has great applied potential in the field of photovoltaic devices. - Highlights: • The composite thin film electrodes (CTFEs) were prepared with nanotubes and nanoparticles. • The CTFEs possess the rapid electron transport and high surface area. • The CTFEs exhibit lower recombination rate and longer electron life time. • The CTFEs have great applied potential in the field of photovoltaic devices

Modifying thin film diamond for electronic applications

International Nuclear Information System (INIS)

Baral, B.

1999-01-01

The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

Electron pulsed beam induced processing of thin film surface by Nb3Ge deposited into a stainless steel tape

International Nuclear Information System (INIS)

Vavra, I.; Korenev, S.A.

1988-01-01

A surface of superconductive thin film of Nb 3 Ge deposited onto a stainless steel tape was processed using the electron beam technique. The electron beam used had the following parameters: beam current density from 400 to 1000 A/cm 2 ; beam energy 100 keV; beam impulse length 300 ns. By theoretical analysis it is shown that the heating of film surface is an adiabatic process. It corresponds to our experimental data and pictures showing a surface remelting due to electron beam influence. After beam processing the superconductive parameters of the film remain unchanged. Roentgenograms have been analysed of Nb 3 Ge film surface recrystallized due to electron beam influence

Magnetization of correlated electron systems. MnSi thin films, CrB2 single crystals and two-dimensional electron systems in MgZnO/ZnO

International Nuclear Information System (INIS)

Brasse, Matthias

2014-01-01

Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.

Low field critical currents and ac losses of thin film niobium--tin superconductors

International Nuclear Information System (INIS)

Howard, R.E.

1977-01-01

The results of a study of the low field critical current and ac loss properties of niobium-tin thin films and layered composites fabricated by electron-beam coevaporation are presented. Particular emphasis is placed upon determining the suitability of this material for use as a conductor in a superconducting power transmission line. Chapter I contains a summary of this work and its major results together with an introduction to the scientific and engineering concepts associated with a superconducting power transmission line. Chapter II is a discussion of the physics of current transport and the associated loss mechanisms in a type-II superconductor. Chapter III gives the details of the electron-beam coevaporation technique developed to fabricate the samples for this study. Also discussed in this chapter are the effects of the evaporation conditions on the growth morphology of the niobium-tin films. Chapter IV presents the details of the experimental techniques developed to measure the ac loss and critical current in these samples as a function of temperature. Chapter V shows the dependence of the critical current of these films and composites on temperature, magnetic field, and on the number of artificially introduced pinning centers in the layered composites. Experimental results are also presented concerning the stability of these conductors against flux jumps. Chapter VI is a discussion of the ac losses in these samples. Detailed comparisons are made between the measured loss and the predictions of the critical state model

Application of electron-chemical curing in the production of thin composite materials

International Nuclear Information System (INIS)

Kopetchenov, V.; Shik, V.; Konev, V.; Kurapov, A.; Misin, I.; Gavrilov, V.; Malik, V.

1993-01-01

Thousands of tons of various thin composite materials in rolls for electrotechnical and domestic application including a whole range of electrical insulating materials, such as varnished and polymer fabrics, glass-micatapes, prepregs, thin laminated plastics and clad laminates, materials for decorative and domestic purposes - pressure sensitive adhesive tape and laminates, covering and finishing compositions based on fabrics, films and papers are produced. An important advantage of the electron-chemical processing in the production of composite materials is an essential energy saving (reduction of energy consumption 3-5 times). Absence of the organic diluents in binders decreases fire and explosion hazards of the production and sufficiently decreases danger for the environment of the technology used. Research and Production Company ''Polyrad'' is engaged in the development of technologies and equipment for the production of thin composite materials by the Electron-Chemical Method. (author)

LiFePO_4_−_xN_y thin-film electrodes coated on carbon fiber-modified current collectors for pseudocapacitors

International Nuclear Information System (INIS)

Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Huang, Wei-Chieh

2015-01-01

LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs) under a gas mixture of N_2/Ar/H_2 as electrode materials in pseudocapacitors. The MCFs were fabricated by thermal chemical vapor deposition on stainless steel substrates as current collectors. Various amounts of N_2 were introduced by controlling the flow ratios of N_2 to Ar/H_2. The LiFePO_4_−_xN_y thin films coated on the surfaces of MCFs were observed by field emission scanning electron microscopy. The electrochemical properties of the LiFePO_4_−_xN_y thin films were characterized using cyclic voltammetry and charge–discharge processes. The LiFePO_4_−_xN_y thin-film electrode deposited under the optimal N_2 contents exhibited a high specific capacitance of 722 F/g at 1 A/g. Even at a current of 20 A/g, the electrode delivered a capacitance of 298 F/g. The pseudocapacitors using LiFePO_4_−_xN_y thin-film electrodes showed no significant capacitance fading after 1000 cycles at 1 A/g. The results indicated that nitrogen doping improved the electrochemical performances of LiFePO_4, demonstrating the potential of LiFePO_4_−_xN_y as an active material in pseudocapacitors. - Highlights: • LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs). • MCFs only act as a three-dimensional current collector in this system. • The pseudocapacitor exhibits a high specific capacitance.

Thin Film Coatings for Suppressing Electron Multipacting in Particle Accelerators

CERN Document Server

Costa Pinto, P; Chiggiato, P; Neupert, H; Shaposhnikova, E N; Taborelli, M; Vollenberg, W; Yin Vallgren, C

2011-01-01

Thin film coatings are an effective way for suppressing electron multipacting in particle accelerators. For bakeable beam pipes, the TiZrV Non Evaporable Getter (NEG) developed at CERN can provide a Secondary Electron Yield (SEY) of 1.1 after activation at 180oC (24h). The coating process was implemented in large scale to coat the long straight sections and the experimental beam pipes for the Large Hadron Collider (LHC). For non bakeable beam pipes, as those of the Super Proton Synchrotron (SPS), CERN started a campaign to develop a coating having a low SEY without need of in situ heating. Magnetron sputtered carbon thin films have shown SEY of 1 with marginal deterioration when exposed in air for months. This material is now being tested in both laboratory and accelerator environment. At CERN’s SPS, tests with electron cloud monitors attached to carbon coated chambers show no degradation of the coating after two years of operation interleaved with a total of 3 months of air exposure during shutdown periods...

Mass determination based on electron scattering in electron probe X-ray microanalysis of thin biological specimens

International Nuclear Information System (INIS)

Linders, P.W.J.

1984-01-01

This thesis describes the development of a method for mass determination of thin biological objects by quantitative electron microscopy. The practical realization of the mass determination consists of photographical recording with subsequent densitometry. (Auth.)

Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

DEFF Research Database (Denmark)

Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

International Nuclear Information System (INIS)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

2014-01-01

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N 2 atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies

Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Energy Technology Data Exchange (ETDEWEB)

Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi [Advanced Film Device, Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi, Tochigi 328-0114 (Japan); Yamauchi, Jun [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi, Kanagawa 243-0036 (Japan); Emeritus Professor of Kyoto University, Oiwake-cho, Kitashirakawa, Kyoto 606-8502 (Japan)

2014-04-28

In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

Near-earth Thin Current Sheets and Birkeland Currents during Substorm Growth Phase

International Nuclear Information System (INIS)

Sorin Zaharia; Cheng, C.Z.

2003-01-01

Two important phenomena observed during the magnetospheric substorm growth phase are modeled: the formation of a near-Earth (|X| ∼ 9 R E ) thin cross-tail current sheet, as well as the equatorward shift of the ionospheric Birkeland currents. Our study is performed by solving the 3-D force-balance equation with realistic boundary conditions and pressure distributions. The results show a cross-tail current sheet with large current (J φ ∼ 10 nA/m 2 ) and very high plasma β (β ∼ 40) between 7 and 10 R E . The obtained region-1 and region-2 Birkeland currents, formed on closed field lines due to pressure gradients, move equatorward and become more intense (J parallel max ∼ 3 (micro)A/m 2 ) compared to quiet times. Both results are in agreement with substorm growth phase observations. Our results also predict that the cross-tail current sheet maps into the ionosphere in the transition region between the region-1 and region-2 currents

Application of electron-chemical curing in the production of thin composite materials

Energy Technology Data Exchange (ETDEWEB)

Kopetchenov, V.; Shik, V.; Konev, V.; Kurapov, A.; Misin, I.; Gavrilov, V.; Malik, V. (Polyrad Research and Production Co., Moscow (Russian Federation))

Thousands of tons of various thin composite materials in rolls for electrotechnical and domestic application including a whole range of electrical insulating materials, such as varnished and polymer fabrics, glass-micatapes, prepregs, thin laminated plastics and clad laminates, materials for decorative and domestic purposes - pressure sensitive adhesive tape and laminates, covering and finishing compositions based on fabrics, films and papers are produced. An important advantage of the electron-chemical processing in the production of composite materials is an essential energy saving (reduction of energy consumption 3-5 times). Absence of the organic diluents in binders decreases fire and explosion hazards of the production and sufficiently decreases danger for the environment of the technology used. Research and Production Company ''Polyrad'' is engaged in the development of technologies and equipment for the production of thin composite materials by the Electron-Chemical Method. (author).

Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

Energy Technology Data Exchange (ETDEWEB)

Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

2016-04-01

A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se2 semiconductors for thin film solar cells

International Nuclear Information System (INIS)

Baier, Robert

2012-01-01

Solar cells based on polycrystalline Cu(In,Ga)Se 2 (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10 11 cm -2 and ∼2.1 x 10 12 cm -2 were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the first time on CIGSe thin

Implanted ZnO thin films: Microstructure, electrical and electronic properties

International Nuclear Information System (INIS)

Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

2007-01-01

Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

Auger electron spectroscopy study on interaction between aluminum thin layers and uranium substrate

International Nuclear Information System (INIS)

Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong; Jiang Chunli; Lu Lei

2005-01-01

Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber (VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl x maybe formed at interface. (authors)

Relativistic electron planar channeling and diffraction in thin monocrystals

International Nuclear Information System (INIS)

Vorob'ev, S.A.; Nurmagambetov, S.B.; Kaplin, V.V.; Rozum, E.I.

1985-01-01

The interaction of relativistic electrons with thin monocrystals was investigated in approximation of continuous potential of crystal plane system. Numerical technique for solution of one-dimensional Schroedinger equation with a periodic potential was developed. Numerical solutions conducted according to the technique were used to determine the forms of ngular distributions of electrons located in various zones of lteral motion. Calculation results were applied for analyzing experimentally obtained data on agular distribution of 5.1 MeV electrons projected at small angles onto the (110) planar system of a Si monocrystal. The conducted complex experimental and theoretical: investigations demonstrated the possibility of prevalen occupation of certain states of lateral motion and enabled to determine angular reg in directions of the electron beam projection on a crystal where either channeling effects or those of electron diffraction are important

Ion source for thinning of specimen in transmission electron microscopy

International Nuclear Information System (INIS)

Hammer, K.; Rothe, R.

1983-01-01

Thinning of specimen for transmission electron microscopy is carried out by means of sputtering. Construction, design, and operation parameters of an ion source are presented. Because the plasma is produced by means of hollow cathode glow discharges, no special focusing system is used

An Auger electron spectroscopy study on the anodization process of high-quality thin-film capacitors made of hafnium

International Nuclear Information System (INIS)

Noya, Atsushi; Sasaki, Katsutaka; Umezawa, Toshiji

1989-01-01

Formation process of the anodic oxide film of hafnium for use as a thin-film capacitor has been examined by the current-voltage characteristics of the anodization and the in-depth analysis of formed oxide using Auger electron spectroscopy. It is found that the oxide growth obeys three different rate laws such as the linear rate law at first and next the parabolic rate law during the constant current anodization, and then the reciprocal logarithmic rate law during the constant voltage anodization following after the constant current process. From the Auger electron spectroscopy analysis, it is found that the shape of the compositional depth profile of the grown oxide film varies associating with the rate law of oxidation obeyed. The variation of depth profile correlating with the rate law is discussed with respect to each elementary process such as the transport and/or the reaction of chemical species interpreted from the over-all behavior of anodization process. It is revealed that the stoichiometric film having an interface with sharp transition, which is favorable for obtaining excellent electrical properties of the capacitor, can be obtained under the condition that the phase-boundary reaction is the rate-determining step of the anodization. The constant voltage anodization process also satisfies such circumstances and therefore can be favorable method for preparing highquality thin-film capacitors. (author)

Eddy Current Testing for Detecting Small Defects in Thin Films

Science.gov (United States)

Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

2007-03-01

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Generation of X-rays by electrons recycling through thin internal targets of cyclic accelerators

Science.gov (United States)

Kaplin, V.; Kuznetsov, S.; Uglov, S.

2018-05-01

The use of thin (recycling effect) of electrons through them. The multiplicity of electron passes (M) is determined by the electron energy, accelerator parameters, the thickness, structure and material of a target and leads to an increase in the effective target thickness and the efficiency of radiation generation. The increase of M leads to the increase in the emittance of electron beams which can change the characteristics of radiation processes. The experimental results obtained using the Tomsk synchrotron and betatron showed the possibility of increasing the yield and brightness of coherent X-rays generated by the electrons passing (recycling) through thin crystals and periodic multilayers placed into the chambers of accelerators, when the recycling effect did not influence on the spectral and angular characteristics of generated X-rays.

Dielectric properties of electron irradiated PbZrO 3 thin films

Indian Academy of Sciences (India)

The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

High current plasma electron emitter

International Nuclear Information System (INIS)

Fiksel, G.; Almagri, A.F.; Craig, D.

1995-07-01

A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

Quantitative analysis of reflection electron energy loss spectra to determine electronic and optical properties of Fe–Ni alloy thin films

International Nuclear Information System (INIS)

Tahir, Dahlang; Oh, Sukh Kun; Kang, Hee Jae; Tougaard, Sven

2016-01-01

Highlights: • Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). • The energy loss functions (ELF) are dominated by a plasmon peak at 23.6 eV for Fe and moves gradually to lower energies in Fe-Ni alloys towards the bulk plasmon energy of Ni at 20.5 eV. • Fe has a strong effect on the dielectric and optical properties of Fe-Ni alloy thin films even for an alloy with 72% Ni. Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). - Abstract: Electronic and optical properties of Fe–Ni alloy thin films grown on Si (1 0 0) by ion beam sputter deposition were studied via quantitative analyses of reflection electron energy loss spectra (REELS). The analysis was carried out by using the QUASES-XS-REELS and QUEELS-ε(k,ω)-REELS softwares to determine the energy loss function (ELF) and the dielectric functions and optical properties by analyzing the experimental spectra. For Ni, the ELF shows peaks around 3.6, 7.5, 11.7, 20.5, 27.5, 67 and 78 eV. The peak positions of the ELF for Fe_2_8Ni_7_2 are similar to those of Fe_5_1Ni_4_9, even though there is a small peak shift from 18.5 eV for Fe_5_1Ni_4_9 to 18.7 eV for Fe_2_8Ni_7_2. A plot of n, k, ε_1, and ε_2 shows that the QUEELS-ε(k,ω)-REELS software for analysis of REELS spectra is useful for the study of optical properties of transition metal alloys. For Fe–Ni alloy with high Ni concentration (Fe_2_8Ni_7_2), ε_1, and ε_2 have strong similarities with those of Fe. This indicates that the presence of Fe in the Fe–Ni alloy thin films has a strong effect.

Electronic Properties and Device Applications of van-der-Waals Thin Films

Science.gov (United States)

Renteria, Jacqueline de Dios

Successful exfoliation of graphene and discoveries of its unique electrical and thermal properties have motivated searches for other quasi two-dimensional (2D) materials with interesting properties. The layered van der Waals materials can be cleaved mechanically or exfoliated chemically by breaking the relatively weak bonding between the layers. In this dissertation research I addressed a special group of inorganic van der Waals materials -- layered transition metal dichalcogenides (MX2, where M=Mo, W, Nb, Ta or Ti and X=S, Se or Te). The focus of the investigation was electronic properties of thin films of TaSe2 and MoS2 and their device applications. In the first part of the dissertation, I describe the fabrication and performance of all-metallic three-terminal devices with the TaSe2 thin-film conducting channel. The layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. It was established that devices with nanometer-scale thickness channels exhibited strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. It was found that the drain-source current in thin-film 2H-TaSe2--Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. In the second part of the dissertation, I describe the fabrication, electrical testing and measurements of the low-frequency 1/f noise in three-terminal devices with the MoS2 thin-film channel (f is the frequency). Analysis of the experimental data allowed us to distinguish channel and contact noise contributions for both as fabricated and aged devices. The noise characteristics of MoS 2--Ti/Au devices are in agreement with the McWhorter model description. The latter is contrary to what is observed in

Study of nanometric thin pyrolytic carbon films for explosive electron emission cathode in high-voltage planar diode

Energy Technology Data Exchange (ETDEWEB)

Baryshevsky, Vladimir; Belous, Nikolai; Gurinovich, Alexandra; Gurnevich, Evgeny [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Kuzhir, Polina, E-mail: polina.kuzhir@gmail.com [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Maksimenko, Sergey [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Molchanov, Pavel; Shuba, Mikhail [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Roddatis, Vladimir [CIC energiGUNE, Albert Einstein 48, 01510 Minano, Alava (Spain); Institut für Materialphysik of Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Kaplas, Tommi; Svirko, Yuri [Institute of Photonics, University of Eastern Finland, P.O. Box 111, Joensuu FI-80101 (Finland)

2015-04-30

We report on an experimental study of explosive electron emission properties of cathode made by nanometric thin pyrolytic carbon (PyC) films (2–150 nm) deposited on Cu substrate via methane-based chemical vapor deposition. High current density at level of 300 A/cm{sup 2} in 5 · 10{sup −5} Pa vacuum has been observed together with very stable explosive emission from the planar cathode. The Raman spectroscopy investigation proves that the PyC films remain the same after seven shots. According to the optical image analysis of the cathode before and after one and seven shots, we conclude that the most unusual and interesting feature of using the PyC films/Cu cathode for explosive emission is that the PyC layer on the top of the copper target prevents its evaporation and oxidation, which leads to higher emission stability compared to conventional graphitic/Cu cathodes, and therefore results in longer working life. - Highlights: • Explosive electron emission from pyrolytic carbon (PyC) cathode is reported. • We observe high current density, 300 A/cm{sup 2}, and stable emission parameters. • PyC integrity ensures a high application potential for high current electronics.

Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes

Energy Technology Data Exchange (ETDEWEB)

Cooperstein, G; Mosher, D; Stephanakis, S J; Weber, B V; Young, F C [Naval Research Laboratory, Washington, DC (United States); Swanekamp, S B [JAYCOR, Vienna, VA (United States)

1997-12-31

Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

Science.gov (United States)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Oxide Thin-Film Electronics using All-MXene Electrical Contacts

KAUST Repository

Wang, Zhenwei

2018-02-23

2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se{sub 2} semiconductors for thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Baier, Robert

2012-06-25

Solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10{sup 11} cm{sup -2} and ∼2.1 x 10{sup 12} cm{sup -2} were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Science.gov (United States)

Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A; Anthopoulos, Thomas D

2017-03-01

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In 2 O 3 /ZnO heterojunction. We find that In 2 O 3 /ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In 2 O 3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In 2 O 3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

KAUST Repository

Faber, Hendrik

2017-04-28

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Electron currents associated with an auroral band

International Nuclear Information System (INIS)

Spiger, R.J.; Anderson, H.R.

1975-01-01

Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed

Electron currents associated with an auroral band

Science.gov (United States)

Spiger, R. J.; Anderson, H. R.

1975-01-01

Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

International Nuclear Information System (INIS)

Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

2011-01-01

The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

2016-10-15

Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

Structure, Surface Morphology, and Optical and Electronic Properties of Annealed SnS Thin Films Obtained by CBD

Science.gov (United States)

Reghima, Meriem; Akkari, Anis; Guasch, Cathy; Turki-Kamoun, Najoua

2014-09-01

SnS thin films were initially coated onto Pyrex substrates by the chemical bath deposition (CBD) method and annealed at various temperatures ranging from 200°C to 600°C for 30 min in nitrogen gas. X-ray diffraction (XRD) analysis revealed that a structural transition from face-centered cubic to orthorhombic occurs when the annealing temperature is over 500°C. The surface morphology of all thin layers was investigated by means of scanning electron microscopy and atomic force microscopy. The elemental composition of Sn and S, as measured by energy dispersive spectroscopy, is near the stoichiometric ratio. Optical properties studied by means of transmission and reflection measurements show an increase in the absorption coefficient with increasing annealing temperatures. The band gap energy is close to 1.5 eV, which corresponds to the optimum for photovoltaic applications. Last, the thermally stimulated current measurements show that the electrically active traps located in the band gap disappear after annealing at 500°C. These results suggest that, once again, annealing as a post-deposition treatment may be useful for improving the physical properties of the SnS layers included in photovoltaic applications. Moreover, the thermo-stimulated current method may be of practical relevance to explore the electronic properties of more conventional industrial methods, such as sputtering and chemical vapor deposition.

Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending

NARCIS (Netherlands)

Van Den Ende, D.A.; Van De Wiel, H.J.; Kusters, R.H.L.; Sridhar, A.; Schram, J.F.M.; Cauwe, M.; Van Den Brand, J.

2014-01-01

Ultra-thin chips of less than 20 μm become flexible, allowing integration of silicon IC technology with highly flexible electronics such as food packaging sensor systems or healthcare and sport monitoring tags as wearable patches or even directly in clothing textile. The ultra-thin chips in these

Electron cyclotron resonance microwave ion sources for thin film processing

International Nuclear Information System (INIS)

Berry, L.A.; Gorbatkin, S.M.

1990-01-01

Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs

Compact high-current, subnanosecond electron accelerator

Energy Technology Data Exchange (ETDEWEB)

Shpak, V G; Shunajlov, S A; Ulmaskulov, M R; Yalandin, M I [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics; Pegel, I V [Russian Academy of Sciences, Tomsk (Russian Federation). High-Current Electronics Inst.; Tarakanov, V P [Russian Academy of Sciences, Moscow (Russian Federation). High-Temperature Inst.

1997-12-31

A compact subnanosecond, high-current electron accelerator producing an annular electron beam of duration up to 300 - 400 ps, energy about 250 keV, and current up to 1 kA has been developed to study transient processes in pulsed power microwave devices. The measuring and recording techniques used to experimentally investigate the dynamics of the beam current pulse and the transformation of the electron energy during the transportation of the beam in a longitudinal magnetic field are described. The experimental data obtained are compared with the predictions of a numerical simulation. (author). 6 figs., 5 refs.

Electron energization in the geomagnetic tail current sheet

International Nuclear Information System (INIS)

Lyons, L.R.

1984-01-01

Electron motion in the distant tail current sheet is evaluated and found to violate the guiding center approximation at energies > or approx. =100 eV. Most electrons within the energy range approx.10 -1 -10 2 keV that enter the current sheet become trapped within the magnetic field reversal region. These electrons then convect earthward and gain energy from the cross-tail electric field. If the energy spectrum of electrons entering the current sheet is similar to that of electrons from the boundary layer surrounding the magnetotail, the energy gain from the electric field produces electron energy spectra comparable to those observed in the earth's plasma sheet. Thus current sheet interactions can be a significant source of particles and energy for plasma sheet electrons as well as for plasma sheet ions. A small fraction of electrons within the current sheet has its pitch angles scattered so as to be ejected from the current sheet within the atmospheric loss cone. These electrons can account for the electron precipitation near the high-latitude boundary of energetic electrons, which is approximately isotropic in pitch angle up to at least several hundred keV. Current sheet interaction should cause approximately isotropic auroral precipitation up to several hundred keV energies, which extends to significantly lower latitudes for ions than for electrons in agreement with low-altitude satellite observations. Electron precipitation associated with diffuse aurora generally has a transition at 1-10 keV to anisotropic pitch angle distributions. Such electron precipitation cannot be explained by current sheet interactions, but it can be explained by pitch angle diffusion driven by plasma turbulence

Effect of ballistic electrons on ultrafast thermomechanical responses of a thin metal film

International Nuclear Information System (INIS)

Xiong Qi-lin; Tian Xin

2017-01-01

The ultrafast thermomechanical coupling problem in a thin gold film irradiated by ultrashort laser pulses with different electron ballistic depths is investigated via the ultrafast thermoelasticity model. The solution of the problem is obtained by solving finite element governing equations. The comparison between the results of ultrafast thermomechanical coupling responses with different electron ballistic depths is made to show the ballistic electron effect. It is found that the ballistic electrons have a significant influence on the ultrafast thermomechanical coupling behaviors of the gold thin film and the best laser micromachining results can be achieved by choosing the specific laser technology (large or small ballistic range). In addition, the influence of simplification of the ultrashort laser pulse source on the results is studied, and it is found that the simplification has a great influence on the thermomechanical responses, which implies that care should be taken when the simplified form of the laser source term is applied as the Gaussian heat source. (paper)

Structures and electronic properties of thin-films of polycyclic aromatic hydrocarbons

International Nuclear Information System (INIS)

Natsume, Yutaka; Minakata, Takashi; Aoyagi, Takeshi

2009-01-01

We report the fabrication and characterization of organic thin-film transistors (TFTs) using several polycyclic aromatic hydrocarbons (PAHs). Pentacene, ovalene, dibenzocoronene and hexabenzocoronene were deposited as organic semiconductors on silicon wafers with gold electrodes as the bottom-contact configuration of the TFTs. The pentacene TFT showed the highest field-effect mobility of more than 0.1 cm 2 /Vs in comparison with the other PAHs. The results clarified that the high field-effect mobility of the pentacene thin film is due to large grain size and intrinsic electronic properties

Properties of TBCCO 2212 thin films for electronic applications

International Nuclear Information System (INIS)

Andreone, A.; Cassinese, A.; Palomba, F.; Pica, G.; Salluzzo, M.; Malandrino, G.; Ancarani, V.; Fragala, I.L.

1999-01-01

The authors report on the synthesis and structural and electrical characterization of high quality Tl 2 Ba 2 Ca 1 Cu 2 O x superconducting thin films. The samples have been prepared ex-situ by a combined approach of metal-Organic Chemical Vapor Deposition (MOCVD) and thallium vapor diffusion. The films have been grown on 10x10 mm 2 (100) LaAlO 3 substrates. X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analyses (EDX) have investigated the morphological and compositional nature of the films. The transport properties have been measured using both a four-probes and an inductive method. The highest critical temperature and critical current density are 104 K and 1 x 10 6 A/cm 2 respectively. The microwave response of two samples has been studied using a microstrip resonator technique. The best surface resistance values are below 200 μΩ at 1.2 GHz and 4.2 K. Measurements of the field dependence of the surface resistance have been performed

Current neutralization of nanosecond risetime, high-current electron beam

International Nuclear Information System (INIS)

Lidestri, J.P.; Spence, P.W.; Bailey, V.L.; Putnam, S.D.; Fockler, J.; Eichenberger, C.; Champney, P.D.

1991-01-01

This paper reports that the authors have recently investigated methods to achieve current neutralization in fast risetime (<3 ns) electron beams propagating in low-pressure gas. For this investigation, they injected a 3-MV, 30-kA intense beam into a drift cell containing gas pressures from 0.10 to 20 torr. By using a fast net current monitor (100-ps risetime), it was possible to observe beam front gas breakdown phenomena and to optimize the drift cell gas pressure to achieve maximum current neutralization. Experimental observations have shown that by increasing the drift gas pressure (P ∼ 12.5 torr) to decrease the mean time between secondary electron/gas collisions, the beam can propagate with 90% current neutralization for the full beam pulsewidth (16 ns)

Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

Science.gov (United States)

Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

2018-06-01

Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

International Nuclear Information System (INIS)

Todorov, R; Spasov, G; Petkov, K; Tasseva, J

2010-01-01

The photoinduced changes in the refractive index and optical band-gap of thin As 32 S 34 Se 34 films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

Spherical aberration correction in a scanning transmission electron microscope using a sculpted thin film.

Science.gov (United States)

Shiloh, Roy; Remez, Roei; Lu, Peng-Han; Jin, Lei; Lereah, Yossi; Tavabi, Amir H; Dunin-Borkowski, Rafal E; Arie, Ady

2018-06-01

Nearly eighty years ago, Scherzer showed that rotationally symmetric, charge-free, static electron lenses are limited by an unavoidable, positive spherical aberration. Following a long struggle, a major breakthrough in the spatial resolution of electron microscopes was reached two decades ago by abandoning the first of these conditions, with the successful development of multipole aberration correctors. Here, we use a refractive silicon nitride thin film to tackle the second of Scherzer's constraints and demonstrate an alternative method for correcting spherical aberration in a scanning transmission electron microscope. We reveal features in Si and Cu samples that cannot be resolved in an uncorrected microscope. Our thin film corrector can be implemented as an immediate low cost upgrade to existing electron microscopes without re-engineering of the electron column or complicated operation protocols and can be extended to the correction of additional aberrations. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Thin Film Energy Storage Device with Spray‐Coated Sliver Paste Current Collector

Directory of Open Access Journals (Sweden)

Seong Man Yoon

2017-12-01

Full Text Available This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass‐manufacturable spray‐coating technology enables the fabrication of two different half‐cell electric double layer capacitors (EDLC with a spray‐coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half‐cell EDLC with the spray‐coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half‐cell EDLC with the spray‐coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from −0.5 V to 0.5 V, the spray‐coated thin film energy storage device exhibits a better performance.

Monte Carlo simulation of positron induced secondary electrons in thin carbon foils

International Nuclear Information System (INIS)

Cai, L H; Yang, B; Ling, C C; Beling, C D; Fung, S

2011-01-01

Emission of secondary electrons induced by the passage of low energy positrons through thin carbon foils was studied by the Monte Carlo method. The positron and electron elastic cross sections were calculated by partial wave analysis. The inelastic positron-valence-electron was described by the energy loss function obtained from dielectric theory. The positron-core-electron interaction was modelled by the Gryzinski's excitation function. Positron transport inside the carbon foil was simulated in detail. Secondary electrons created by positrons and high energy secondary electrons through inelastic interactions were tracked through the foil. The positron transmission coefficient and secondary electron yielded in forward and backward geometry are calculated and dependences on positron energy and carbon foil thickness are discussed.

Development of high current electron beam generator

Energy Technology Data Exchange (ETDEWEB)

Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

1997-05-01

A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

Development of high current electron beam generator

International Nuclear Information System (INIS)

Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

1997-05-01

A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

Auger-electron spectroscopy investigation of thin Ag-As-S-Se films

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Spasov, G; Petkov, K; Tasseva, J, E-mail: jordanka@clf.bas.b [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria)

2010-04-01

The photoinduced changes in the refractive index and optical band-gap of thin As{sub 32}S{sub 34}Se{sub 34} films photodoped with silver were studied using spectrophotometric methods. The compositional profile of the films was revealed by means of Auger-electron spectroscopy.

Electron cyclotron emission from optically thin plasma in compact helical system

International Nuclear Information System (INIS)

Idei, Hiroshi; Kubo, Shin; Hosokawa, Minoru; Iguchi, Harukazu; Ohkubo, Kunizo; Sato, Teruyuki.

1994-01-01

A frequency spectrum of second harmonic electron cyclotron emission was observed for an optically thin plasma produced by fundamental electron cyclotron heating in a compact helical system. A radial electron temperature profile deduced from this spectrum neglecting the multiple reflections effect shows a clear difference from that measured by Thomson scattering. We relate the spectrum with the electron temperature profile by the modified emission model including the scrambling effect. The scrambling effect results from both mode conversion and change in the trajectory due to multiple reflections of the emitting ray at the vessel wall. The difference between the two temperature profiles is explained well by using the modified emission model. Reconstruction of the electron temperature profile from the spectrum using this model is also discussed. (author)

Recent progress on thin-film encapsulation technologies for organic electronic devices

Science.gov (United States)

Yu, Duan; Yang, Yong-Qiang; Chen, Zheng; Tao, Ye; Liu, Yun-Fei

2016-03-01

Among the advanced electronic devices, flexible organic electronic devices with rapid development are the most promising technologies to customers and industries. Organic thin films accommodate low-cost fabrication and can exploit diverse molecules in inexpensive plastic light emitting diodes, plastic solar cells, and even plastic lasers. These properties may ultimately enable organic materials for practical applications in industry. However, the stability of organic electronic devices still remains a big challenge, because of the difficulty in fabricating commercial products with flexibility. These organic materials can be protected using substrates and barriers such as glass and metal; however, this results in a rigid device and does not satisfy the applications demanding flexible devices. Plastic substrates and transparent flexible encapsulation barriers are other possible alternatives; however, these offer little protection to oxygen and water, thus rapidly degrading the devices. Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation into the flexible devices. Because of these (and other) reasons, there has been an intense interest in developing transparent barrier materials with much lower permeabilities, and their market is expected to reach over 550 million by 2025. In this study, the degradation mechanism of organic electronic devices is reviewed. To increase the stability of devices in air, several TFE technologies were applied to provide efficient barrier performance. In this review, the degradation mechanism of organic electronic devices, permeation rate measurement, traditional encapsulation technologies, and TFE technologies are presented.

HREELS to identify electronic structures of organic thin films.

Science.gov (United States)

Oeter, D; Ziegler, C; Göpel, W

1995-10-01

The electronic structure of alpha-oligothiophene (alphanT) thin films has been investigated for increasing chain lengths of n= 4-8 thiophene units with high resolution electron energy loss spectroscopy (HREELS) in the specular reflection geometry at a primary energy of 15 eV. The great advantage of this technique in contrast to UV/VIS absorption spectroscopy results from the fact, that the impact scattering mechanism of HREELS makes it possible to also detect optically forbidden electronic transitions. On the other hand, the electrons used as probes in HREELS have a wavelength which is two orders of magnitudes smaller if compared to those of photons used in UV/VIS absorption spectroscopy. Therefore individual molecules are excited by HREELS independent from each other and hence the excitation of collective excitons is not possible. As a result, information about the orientation of the molecules cannot be achieved with HREELS, which, however, is possible in polarization-dependent UV/VIS spectroscopy.

Thinning of specimens for examination under the electron microscope

International Nuclear Information System (INIS)

Franks, J.

1982-01-01

Heretofore specimens have been thinned to penetration for examination by electron microscopy techniques, by ion erosion techniques. A more rapid technique is disclosed employing a beam or beams comprised solely of neutral particles. In tests carried out using this technique the sputtering rate from a sample specimen has been shown to be several percentages greater using a neutral source than from an ion source with the same flux density. (author)

Calibration of thin-film dosimeters irradiated with 80-120 kev electrons

DEFF Research Database (Denmark)

Helt-Hansen, J.; Miller, A.; McEwen, M.

2004-01-01

A method for calibration of thin-film dosimeters irradiated with 80-120keV electrons has been developed. The method is based on measurement of dose with a totally absorbing graphite calorimeter, and conversion of dose in the graphite calorimeter to dose in the film dosimeter by Monte Carlo calcul......V electron irradiation. The two calibrations were found to be equal within the estimated uncertainties of +/-10% at 1 s.d. (C) 2004 Elsevier Ltd. All rights reserved....

Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

Directory of Open Access Journals (Sweden)

M. Egginger

2012-12-01

Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2017-01-01

Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

Thin film studies toward improving the performance of accelerator electron sources

Energy Technology Data Exchange (ETDEWEB)

Mamun, Md Abdullah [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Old Dominion Univ., Norfolk, VA (United States)

2016-05-31

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identical 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(±0.05) x 10-¹³ Torr L s^-1 cm^-2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(±0.05) x 10^-13 Torr L s^-1 cm^-2 following an initial 90 °C bake and 2(±20) x 10^-16 Torr L s^-1 cm^-2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify

Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

KAUST Repository

Ho, Chih-Hsiang

2017-06-27

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

KAUST Repository

Ho, Chih-Hsiang; Tsai, Dung-Sheng; Lu, Chao; Kim, Soo Youn; Mungan, Selin; Yang, Shih-Guo; Zhang, Yuanzhi; He, Jr-Hau

2017-01-01

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

In situ observation of electron-beam-induced dewetting of CdSe thin film embedded in SiO2

DEFF Research Database (Denmark)

Fabrim, Zacarias Eduardo; Kjelstrup-Hansen, Jakob; Fichtner, Paulo F. P.

In this work we show the dewetting process of the CdSe thin films induced by electron beam irradiation. A multilayer heterostructure of SiO2/CdSe/SiO2 was made by a magnetron sputtering process. A plan-view (PV) sample was irradiated with 200 kV electrons in the TEM with two current densities: 0.......33 A.cm2 and 1.0 A.cm2 and at 80 kV with 0.37 A.cm2. The dewetting of the CdSe film is inferred by a number of micrographs taken during the irradiation. The microstructural changes were analyzed under the assumption of being induced by ballistic collision effects in the absence of sample heating....

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

Science.gov (United States)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

Science.gov (United States)

Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

2017-09-01

Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High current polarized electron source

Science.gov (United States)

Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

2018-05-01

Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

Aharanov--Bohm currents in thin superconducting cylinders

International Nuclear Information System (INIS)

Kunstatter, G.; Revzen, M.; Trainor, L.E.H.

1983-01-01

The Aharanov--Bohm effect is the influence of classically inaccessible electromagnetic fields on quantum wave functions. In this paper we consider the Ginsburg--Landau (GL) equations for the stationary states of a thin, superconducting cylinder in the presence of a curl-free, static electromagnetic potential corresponding to zero fields. We solve the GL equations explicitly to obtain self-consistent solutions for the current density, the induced field and the free energy in a well-defined and accessible approximation. The analysis makes quantitative predictions which can, in principle, be experimentally tested to provide a clear and convincing demonstration of the Aharanov--Bohm effect

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Electron mean free path dependence of the critical currents and the pair-breaking limit in superconducting films

International Nuclear Information System (INIS)

Fedorov, N.; Rinderer, L.

1977-01-01

We have studied the current-induced breakdown of superconductivity in wide (100--980 μm) and thin (0.25--0.98 μm) films of tin. It is shown that the current at which the resistance of the sample begins to rise rapidly in the process of the destruction of superconductivity by a current can be fairly well associated with the theoretical value of the pair-breaking current in the Ginzburg-Landau phenomenological approach (I/sub c//sup G L/). This effect is observed over a rather wide temperature region (up to ΔTapprox.0.7 K), depending on the electron mean free path in the films. The values of the critical currents outside the above-mentioned region correlate qualitatively with those determined by inhomogeneities of the films as proposed by Larkin and Ovchinnikov

Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

DEFF Research Database (Denmark)

Duchamp, Martial; Söderström, K.; Jeangros, Q.

2011-01-01

The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through...... the creation of surface plasmon polaritons. Here, we use transmission electron microscopy (TEM) techniques to study the grain structure of a Ag thin-film that was sputtered on top of 2-μm-thick rough ZnO layer - defects, such as twin-boundaries have been observed. A smoothing of the top Ag surface was also...... observed after ex-situ annealing. Electron energy-loss spectroscopy with a monochromatic beam was used to measure the surface plasmon resonance with nm spatial resolution. 1 eV and 3 eV Ag surface plasmon resonances have been observed on as-grown layers. Such measurements provide valuable information about...

Electron irradiation effect on the reverse phase transformation temperatures in TiNi shape memory alloy thin films

International Nuclear Information System (INIS)

Wang, Z.G.; Zu, X.T.; Fu, Y.Q.; Zhu, S.; Wang, L.M.

2005-01-01

In this work, Ti-Ni shape memory alloy thin films were irradiated by 1.7 MeV electron with three types of fluences: 4 x 10 20 , 7 x 10 20 and 1 x 10 21 /m 2 . The influence of electron irradiation on the transformation behavior of the TiNi thin films were investigated by differential scanning calorimetry. The transformation temperatures A s and A f shifted to higher temperature after electron irradiation, the martensite was stabilized. The electron irradiation effect can be easily eliminated by one thermal cycle. The shifts of the transformation temperatures can be explained from the change of potential energy barrier and coherency energy between parent phase and martensite after irradiation

Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

Directory of Open Access Journals (Sweden)

Rosa Maria Rabelo Junqueira

2008-12-01

Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

Semiclassical electronic transport in MnAs thin films

International Nuclear Information System (INIS)

Helman, C.; Milano, J.; Steren, L.; Llois, A.M.

2008-01-01

Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface

Semiclassical electronic transport in MnAs thin films

Energy Technology Data Exchange (ETDEWEB)

Helman, C. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)], E-mail: helman@tandar.cnea.gov.ar; Milano, J.; Steren, L. [Departamento de Fisica, Centro Atomico Bariloche, Comision Nacional de Energia Atomica, S.C. Bariloche (Argentina); Llois, A.M. [Dpto de Fisica, ' Juan Jose Giambiagi' , Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Unidad de Actividad Fisica, Centro Atomico Constituyentes, Comision Nacional de Energia Atomica, Buenos Aires (Argentina)

2008-07-15

Magneto-transport experiments have been recently performed on MnAs thin films. Hall effect and transverse magnetoresistance measurements have shown interesting and, until now, unknown results. For instance, the transverse magnetoresistance shows no saturation in the presence of very high magnetic fields. In order to understand the contribution of the electronic band structure to the non-saturating magnetoresistance, we perform ab initio calculations, using the Wien2K code and analyze the magneto-transport properties within the semiclassical approximation. We show that non-saturation may be due to the presence of open orbits on the majority Fermi surface.

Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

DEFF Research Database (Denmark)

Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

1995-01-01

Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

Effective source of bremsstrahlung with multiple crossing of a thin target by an electron beam

International Nuclear Information System (INIS)

Grishin, V.K.; Ishkhanov, B.S.; Shvedunov, V.I.

1996-01-01

A basically new scheme of electron beam discharge to the target for x ray and gamma radiation generation is proposed. In this case an accelerated electron beam crosses a thin braking target many times, which substantially increases the integral radiation yield. 3 refs.; 2 figs

Electron beam influence on the carbon contamination of electron irradiated hydroxyapatite thin films

International Nuclear Information System (INIS)

Hristu, Radu; Stanciu, Stefan G.; Tranca, Denis E.; Stanciu, George A.

2015-01-01

Highlights: • Carbon contamination mechanisms of electron-beam-irradiated hydroxyapatite. • Atomic force microscopy phase imaging used to detect carbon contamination. • Carbon contamination dependence on electron energy, irradiation time, beam current. • Simulation of backscattered electrons confirms the experimental results. - Abstract: Electron beam irradiation which is considered a reliable method for tailoring the surface charge of hydroxyapatite is hindered by carbon contamination. Separating the effects of the carbon contamination from those of irradiation-induced trapped charge is important for a wide range of biological applications. In this work we focus on the understanding of the electron-beam-induced carbon contamination with special emphasis on the influence of the electron irradiation parameters on this phenomenon. Phase imaging in atomic force microscopy is used to evaluate the influence of electron energy, beam current and irradiation time on the shape and size of the resulted contamination patterns. Different processes involved in the carbon contamination of hydroxyapatite are discussed

Fabrication of bright and thin Zn₂SiO₄ luminescent film for electron beam excitation-assisted optical microscope.

Science.gov (United States)

Furukawa, Taichi; Kanamori, Satoshi; Fukuta, Masahiro; Nawa, Yasunori; Kominami, Hiroko; Nakanishi, Yoichiro; Sugita, Atsushi; Inami, Wataru; Kawata, Yoshimasa

2015-07-13

We fabricated a bright and thin Zn₂SiO₄ luminescent film to serve as a nanometric light source for high-spatial-resolution optical microscopy based on electron beam excitation. The Zn₂SiO₄ luminescent thin film was fabricated by annealing a ZnO film on a Si₃N₄ substrate at 1000 °C in N₂. The annealed film emitted bright cathodoluminescence compared with the as-deposited film. The film is promising for nano-imaging with electron beam excitation-assisted optical microscopy. We evaluated the spatial resolution of a microscope developed using this Zn₂SiO₄ luminescent thin film. This is the first report of the investigation and application of ZnO/Si₃N₄ annealed at a high temperature (1000 °C). The fabricated Zn₂SiO₄ film is expected to enable high-frame-rate dynamic observation with ultra-high resolution using our electron beam excitation-assisted optical microscopy.

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

International Nuclear Information System (INIS)

Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

1998-01-01

Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

Review of thin film superconductivity

International Nuclear Information System (INIS)

Kihlstrom, K.E.

1989-01-01

Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

Prospects for enhancement of critical current of HTSC: thin films with artificial pinning centres

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Khoryushin, A.V.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Puriy, A.V. (Moscow Institute of Physics and Technology, Moscow (Russian Federation)); Yurchenko, V.; Johansen, T. (Univ. of Oslo, Dept. of Physics, Oslo (Norway))

2008-10-15

Improvement of the critical current of YBCO thin films and heterostructures remains one of the main tasks for fabrication of modern superconducting wires and connectors. Possible ways of achieving the goal are choice of superconductor composition, engineering of artificial pinning centres, and combination of the superconducting layer with other materials. The team of the Department of Physics at Technical University of Denmark is working in all these fields and this paper is a short review of our achievements in an attempt to improve the critical current density of YBCO thin films. (au)

Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses.

Science.gov (United States)

Schnabel, Volker; Jaya, B Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M

2016-11-07

A paramount challenge in materials science is to design damage-tolerant glasses. Poisson's ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson's ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses.

Parameters affecting profile shape of a high energy low current thin ion beam. Vol. 2

Energy Technology Data Exchange (ETDEWEB)

Abdel Salam, F W; Moustafa, O A; El-Khabeary, H [Accelerators Department, Nuclear Research Center, Atomic Energy Authority, Cairo, (Egypt)

1996-03-01

The shape of the profile of a high energy, low current beam of finite length has beam investigated. The beam profile shape depends on the initial beam radius, beam perveance, atomic mass number, charge state of ions, and beam length. These parameters can affect the relation between the initial beam radius and the corresponding final one. An optimum initial beam radius corresponding to minimum final beam at the target has been formulated and the relation between them is deduced taking account of the space charge effect. The minimum beam radius at the target was found to be equal to 2.3 of the optimum initial radius. It is concluded that in order to obtain a small beam radius at a target placed at a finite distance from an ion source, a beam of a low perveance, low atomic mass number and high number of electronic charge is required. This is an important detection for micro machining applications using the oscillating electron ion source which produces nearly paraxial thin beam of low perveance. 12 figs.

Electron and hole transport in ambipolar, thin film pentacene transistors

International Nuclear Information System (INIS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV

Electron and hole transport in ambipolar, thin film pentacene transistors

Energy Technology Data Exchange (ETDEWEB)

Saudari, Sangameshwar R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Kagan, Cherie R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2015-01-21

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

Thin-film chemical sensors based on electron tunneling

Science.gov (United States)

Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

1985-01-01

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns

Science.gov (United States)

Ozur, G. E.; Proskurovsky, D. I.

2018-01-01

This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of explosive electron emission under plasma and the formation and transport of high-current electron beams in plasma-filled systems are discussed consecutively. Considerable attention is given to the nonstationary effects that occur in the space charge layers of plasma. Emphasis is also placed on the problem of providing a uniform energy density distribution over the beam cross section, which is of critical importance in using electron beams of this type for surface treatment of materials. Examples of facilities based on low-energy high-current electron beam sources are presented and their applications in materials science and practice are discussed.

Effect of deposition distance on thickness and microstructure of silicon thin film produced by electron beam evaporation; Efeito da distancia de deposicao na espessura e microestrutura de filme fino obtido por evaporacao por feixe de eletrons

Energy Technology Data Exchange (ETDEWEB)

Toledo, T.F.; Ramanery, F.P.; Branco, J.R.T. [Fundacao Centro Tecnologico de Minas Gerais, Belo Horizonte, MG (Brazil)], e-mail: thalitaqui@yahoo.com.br; Cunha, M.A. [Acos Especiais Itabira S.A. (Acesita), Belo Horizonte, MG (Brazil)

2006-07-01

The interest for materials with new characteristics and properties made thin films an area of highest research interest. Silicon thin films have been widely used in solar cells, being the main active layer. In this work, the effect of deposition distance on thickness and microstructure of silicon films was investigated. The electron beam evaporation technique with argon plasma assistance was used to obtain films on stainless steel 304, Fe-Si alloy and soda lime glass. The experiments were made varying electron beam current and deposition pressure. The results are discussed based on Hertz-Knudsen's law and thin films microstructure evolution models. The samples were characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction and profilometer. (author)

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

CALCULATION-EXPERIMENTAL METHOD OF RESEARCH IN A METALLIC CONDUCTOR WITH THE PULSE CURRENT OF ELECTRONIC WAVEPACKAGES AND DE BROGLIE ELECTRONIC HALF-WAVES

Directory of Open Access Journals (Sweden)

M. I. Baranov

2016-12-01

Full Text Available Purpose. Development of calculation-experimental method for a discovery and study of electronic wavepackages (EWP and of de Broglie electronic half-waves in a metallic conductor with the pulse axial-flow current of high density. Methodology. Theoretical bases of the electrical engineering, bases of quantum physics, electrophysics bases of technique of high voltage and large pulsecurrents, and also bases of technique of measuring of permanent and variable electric value. Results. On the basis of generalization of results of research of features of the longitudinal wave periodic distributing of negatively charged transmitters of electric current of conductivity in the thin round continuous zincked steel wire offered and approved in the conditions of high-voltage laboratory method for a discovery and direct determination in him of geometrical parameters of «hot» and «cold» longitudinal areas quantized periodic longitudinal EWP and accordingly the mediated determination of values of the quantized lengths formative their de Broglie electronic half-waves. It is shown that results of close quantum mechanical calculations of EWP and quantized lengths λenz/2 of longitudinal de Broglie half-waves for the probed wire long l0 well comport with the results of the executed high temperature experiments on the powerful high-voltage generator of homopolar large pulse current of millisecond duration. Originality. First calculation-experimental a way the important for the theory of electricity fact of existence is set in a round metallic explorer with the impulsive axial-flow current of the quantized coherent de Broglie electronic half-waves, amplitudes of which at the quantum number of n=1,3,9 correspond the middles of «hot» longitudinal areas of EWP. Calculation quantum mechanical correlation of type of λenz/2=l0/n got experimental confirmation, in obedience to which on length of l0 conductor the integer of quantized electronic half-waves is always laid

Recent developments of truly stretchable thin film electronic and optoelectronic devices.

Science.gov (United States)

Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

2018-03-29

Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Science.gov (United States)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Theory of current-induced spin polarization in an electron gas

Science.gov (United States)

Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

2017-05-01

We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

Focussed ion beam thin sample microanalysis using a field emission gun electron probe microanalyser

Science.gov (United States)

Kubo, Y.

2018-01-01

Field emission gun electron probe microanalysis (FEG-EPMA) in conjunction with wavelength-dispersive X-ray spectrometry using a low acceleration voltage (V acc) allows elemental analysis with sub-micrometre lateral spatial resolution (SR). However, this degree of SR does not necessarily meet the requirements associated with increasingly miniaturised devices. Another challenge related to performing FEG-EPMA with a low V acc is that the accuracy of quantitative analyses is adversely affected, primarily because low energy X-ray lines such as the L- and M-lines must be employed and due to the potential of line interference. One promising means of obtaining high SR with FEG-EPMA is to use thin samples together with high V acc values. This mini-review covers the basic principles of thin-sample FEG-EPMA and describes an application of this technique to the analysis of optical fibres. Outstanding issues related to this technique that must be addressed are also discussed, which include the potential for electron beam damage during analysis of insulating materials and the development of methods to use thin samples for quantitative analysis.

Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles

Science.gov (United States)

Rivera, Felipe

Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ˜500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of

Vibrational spectroscopy and analytical electron microscopy studies of Fe-V-O and In-V-O thin films

CERN Document Server

Vuk, A S; Drazic, G; Colomban, P

2002-01-01

Orthovanadate (M sup 3 sup + VO sub 4; M= Fe, In) and vanadate (Fe sub 2 V sub 4 O sub 1 sub 3) thin films were prepared using sol-gel synthesis and dip coating deposition. Using analytical electron microscopy (AEM), the chemical composition and the degree of crystallization of the phases present in the thin Fe-V-O films were investigated. TEM samples were prepared in both orientations: parallel (plan view) and perpendicular (cross section) to the substrate. In the first stages of crystallization, when the particle sizes were in the nanometer range, the classical identification of phases using electron diffraction was not possible. Instead of measuring d values, experimentally selected area electron diffraction (SAED) patterns were compared to calculated (simulated) patterns in order to determine the phase composition. The problems of evaluating the ratio of amorphous and crystalline phases in thin films are reported. Results of TEM and XRD as well as IR and Raman spectroscopy showed that the films made at lo...

Photon emission by electrons and positrons traversing thin single crystal

International Nuclear Information System (INIS)

Ol'chak, A.S.

1984-01-01

Radiation emission by planar channeled particles (electrons, positrons) in a thin single crystal of thickness L is considered. It is shown that for L approximately πb/THETAsub(L) (b is the lattice constant, THETA sub(L) the Lindhard angle) besides the main spontaneous channeling maxima there exist auxiliary interference maxima, the positions of all the maxima depending on L. The dependence of the radiation spectral intensity on crystal thickness is discussed

Surface modification of steels and magnesium alloy by high current pulsed electron beam

Science.gov (United States)

Hao, Shengzhi; Gao, Bo; Wu, Aimin; Zou, Jianxin; Qin, Ying; Dong, Chuang; An, Jian; Guan, Qingfeng

2005-11-01

High current pulsed electron beam (HCPEB) is now developing as a useful tool for surface modification of materials. When concentrated electron flux transferring its energy into a very thin surface layer within a short pulse time, superfast processes such as heating, melting, evaporation and consequent solidification, as well as dynamic stress induced may impart the surface layer with improved physico-chemical and mechanical properties. This paper presents our research work on surface modification of steels and magnesium alloy with HCPEB of working parameters as electron energy 27 keV, pulse duration ∼1 μs and energy density ∼2.2 J/cm2 per pulse. Investigations performed on carbon steel T8, mold steel D2 and magnesium alloy AZ91HP have shown that the most pronounced changes of phase-structure state and properties occurring in the near-surface layers, while the thickness of the modified layer with improved microhardness (several hundreds of micrometers) is significantly greater than that of the heat-affected zone. The formation mechanisms of surface cratering and non-stationary hardening effect in depth are discussed based on the elucidation of non-equilibrium temperature filed and different kinds of stresses formed during pulsed electron beam melting treatment. After the pulsed electron beam treatments, samples show significant improvements in measurements of wear and corrosion resistance.

Surface modification of steels and magnesium alloy by high current pulsed electron beam

International Nuclear Information System (INIS)

Hao, Shengzhi; Gao, Bo; Wu, Aimin; Zou, Jianxin; Qin, Ying; Dong, Chuang; An, Jian; Guan, Qingfeng

2005-01-01

High current pulsed electron beam (HCPEB) is now developing as a useful tool for surface modification of materials. When concentrated electron flux transferring its energy into a very thin surface layer within a short pulse time, superfast processes such as heating, melting, evaporation and consequent solidification, as well as dynamic stress induced may impart the surface layer with improved physico-chemical and mechanical properties. This paper presents our research work on surface modification of steels and magnesium alloy with HCPEB of working parameters as electron energy 27 keV, pulse duration ∼1 μs and energy density ∼2.2 J/cm 2 per pulse. Investigations performed on carbon steel T8, mold steel D2 and magnesium alloy AZ91HP have shown that the most pronounced changes of phase-structure state and properties occurring in the near-surface layers, while the thickness of the modified layer with improved microhardness (several hundreds of micrometers) is significantly greater than that of the heat-affected zone. The formation mechanisms of surface cratering and non-stationary hardening effect in depth are discussed based on the elucidation of non-equilibrium temperature filed and different kinds of stresses formed during pulsed electron beam melting treatment. After the pulsed electron beam treatments, samples show significant improvements in measurements of wear and corrosion resistance

APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

Science.gov (United States)

KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

2017-12-01

The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

Electron magnetic chiral dichroism in CrO2 thin films using monochromatic probe illumination in a transmission electron microscope

International Nuclear Information System (INIS)

Loukya, B.; Zhang, X.; Gupta, A.; Datta, R.

2012-01-01

Electron magnetic chiral dichroism (EMCD) has been studied in CrO 2 thin films (with (100) and (110) growth orientations on TiO 2 substrates) using a gun monochromator in an aberration corrected transmission electron microscope operating at 300 kV. Excellent signal-to-noise ratio is obtained at spatial resolution ∼10 nm using a monochromatic probe as compared to conventional parallel illumination, large area convergent beam electron diffraction and scanning transmission electron microscopy techniques of EMCD. Relatively rapid exposure using mono probe illumination enables collection of EMCD spectra in total of 8–9 min in energy filtered imaging mode for a given Cr L 2,3 energy scan (energy range ∼35 eV). We compared the EMCD signal obtained by extracting the Cr L 2,3 spectra under three beam diffraction geometry of two different reciprocal vectors (namely g=110 and 200) and found that the g=200 vector enables acquisition of excellent EMCD signal from relatively thicker specimen area due to the associated larger extinction distance. Orbital to spin moment ratio has been calculated using EMCD sum rules for 3d elements and dichroic spectral features associated with CrO 2 are compared and discussed with XMCD theoretical spectra. - Highlights: ► Electron magnetic circular dichroism (EMCD) of CrO 2 thin film with two different orientations. ► Improved EMCD signal with Gun monochromator illumination. ► Improved EMCD signal with higher g vector.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

Science.gov (United States)

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Counter-current flow limited CHF in thin rectangular channels

International Nuclear Information System (INIS)

Cheng, L.Y.

1990-01-01

An analytical expression for counter-current-flow-limitation (CCFL) was used to predict critical heat flux (CHF) for downward flow in thin vertical rectangular channels which are prototypes of coolant channels in test and research nuclear reactors. Top flooding is the mechanism for counter-current flow limited CHF. The CCFL correlation also was used to determine the circulation and flooding-limited CHF. Good agreements were observed between the period the model predictions and data on the CHF for downflow. The minimum CHF for downflow is lower than the flooding-limited CHF and it is predicted to occur at a liquid flow rate higher than that at the flooding limit. 17 refs., 7 figs

Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

2015-03-15

Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

Science.gov (United States)

Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

2014-03-01

SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Electronic and magnetic properties of TTF and TCNQ covered Co thin films

Energy Technology Data Exchange (ETDEWEB)

Geijn, Elmer van, E-mail: e.vangeijn@utwente.nl; Wang, Kai; Jong, Michel P. de [NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2016-05-07

Interfacial effects like orbital hybridization and charge transfer strongly influence the transfer of spins from ferromagnetic metals to organic semiconductors and can lead to the formation of interfacial states with distinct magnetic properties. The changes in the electronic and magnetic properties of a thin Co film upon adsorption of a layer of either the molecular organic electron donor tetrathiafulvalene (TTF) or the acceptor tetracyanoquinodimethane (TCNQ) have been investigated by X-ray absorption spectroscopy and X-ray magnetic circular dichroism using synchrotron radiation. Clear differences between the spectra of the adsorbed molecules and the neutral molecules show the hybridization of the molecular orbitals with the Co interface. Deposition of both organic materials leads to a small increase of the ratio of the orbital magnetic moment to the spin magnetic moment of the Co atoms at the interface. The main effect of overlayer deposition is a modification of the magnetic hysteresis of the Co film: The TCNQ slightly reduces the coercivity of the Co, while the TTF increases the coercivity by a factor of ∼1.5. These complementary effects of either a molecular organic electron donor or acceptor on the interfacial properties of a metal ferromagnetic thin film are a promising result for the controlled modification of the magnetic structure of hybrid interfaces.

Space-charge-limited currents in electron-irradiated dielectrics

International Nuclear Information System (INIS)

Nunes de Oliveira, L.; Gross, B.

1975-01-01

This paper develops the theory of steady-state currents generated in a dielectric placed between positively or negatively biased electrodes and irradiated with a partially penetrating electron beam. The dielectric is divided into an irradiated region (IR), which extends from the electrode of incidence to the extrapolated range of the beam, and a nonirradiated region (NIR). In the IR the primary beam generates an electron-hole plasma. Its end plane acts as a virtual electrode embedded in the dielectric. Currents are space-charge limited in the NIR and Ohmic in the IR which is characterized by a uniform radiation-induced conductivity. Depending on the polarity of the electrode bias, electrons or holes are drawn from the IR into the NIR. The theory correctly predicts an apparent threshold effect for the inset of steady-state currents: the current amplitudes remain small as long as the electron range is smaller than half the sample thickness, and increase strongly only afterwards. Calculated current curves for different beam energies are in satisfactory agreement with experimental results. The role of the electron beam as a virtual electrode is discussed

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Energy Technology Data Exchange (ETDEWEB)

Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-08-01

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

Ultra-high current density thin-film Si diode

Science.gov (United States)

Wang, Qi [Littleton, CO

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

Science.gov (United States)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

Institute of Scientific and Technical Information of China (English)

Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

2017-01-01

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1％ vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

HIGH-CURRENT ERL-BASED ELECTRON COOLING FOR RHIC

International Nuclear Information System (INIS)

BEN-ZVI, I.

2005-01-01

The design of an electron cooler must take into account both electron beam dynamics issues as well as the electron cooling physics. Research towards high-energy electron cooling of RHIC is in its 3rd year at Brookhaven National Laboratory. The luminosity upgrade of RHIC calls for electron cooling of various stored ion beams, such as 100 GeV/A gold ions at collision energies. The necessary electron energy of 54 MeV is clearly out of reach for DC accelerator system of any kind. The high energy also necessitates a bunched beam, with a high electron bunch charge, low emittance and small energy spread. The Collider-Accelerator Department adopted the Energy Recovery Linac (ERL) for generating the high-current, high-energy and high-quality electron beam. The RHIC electron cooler ERL will use four Superconducting RF (SRF) 5-cell cavities, designed to operate at ampere-class average currents with high bunch charges. The electron source will be a superconducting, 705.75 MHz laser-photocathode RF gun, followed up by a superconducting Energy Recovery Linac (ERL). An R and D ERL is under construction to demonstrate the ERL at the unprecedented average current of 0.5 amperes. Beam dynamics performance and luminosity enhancement are described for the case of magnetized and non-magnetized electron cooling of RHIC

Tuning the electronic properties at the surface of BaBiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ferreyra, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Guller, F.; Llois, A. M.; Vildosola, V. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Marchini, F.; Williams, F. J. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Lüders, U. [CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4 (France); Albornoz, C. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Leyva, A. G. [GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, (1650), San Martín, Buenos Aires (Argentina); and others

2016-06-15

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO{sub 3} appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO{sub 3} thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

Single-electron pulse-height spectra in thin-gap parallel-plate chambers

CERN Document Server

Fonte, Paulo J R; Peskov, Vladimir; Policarpo, Armando

1999-01-01

Single-electron pulse-height spectra were measured in 0.6 and 1.2 mm parallel-plate chambers developed for the TOF system of the ALICE /LHC-HI experiment. Mixtures of Ar with ethane, isobutane, and SF/sub 6/ were studied. The observed spectrum shows a clear peak for all gases, suggesting efficient single-electron detection in thin parallel-plate structures. The pulse-height spectrum can be described by the weighted sum of an exponential and a Polya distribution, the Polya contribution becoming more important at higher gains. Additionally, it was found that the maximum gain, above 10/sup 6/, is limited by the appearance of streamers and depends weakly on the gas composition. The suitability of each mixture for single-electron detection is also quantitatively assessed. (8 refs).

Rate constant of free electrons and holes recombination in thin films CdSe

International Nuclear Information System (INIS)

Radychev, N.A.; Novikov, G.F.

2006-01-01

Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

Tritium-caused background currents in electron multipliers

International Nuclear Information System (INIS)

Malinowski, M.E.

1979-05-01

One channel electron multiplier (Galileo No. 4501) and one 14 stage Be/Cu multiplier (Dumont No. SPM3) were exposed to tritium pressures between approx. 10 -7 Torr to 10 -3 Torr in amounts from approx. 10 -5 Torr-s to 60 Torr-s and the β-decay caused currents in the multipliers measured. The background currents in both multipliers consisted of two components: (1) a high, reversible current which was proportional to the tritium exposure pressure; and (2) a lower, irreversible background current which increased with increasing cumulative tritium exposure. The β-decay caused currents in each multiplier increased the same way with exposure, suggesting the detected electrons arose from decaying tritium adsorbed on surfaced external to the multipliers

Structural and electronic properties of rare-earth silicide thin films at Si(111)

Energy Technology Data Exchange (ETDEWEB)

Dues, Christof; Schmidt, Wolf Gero; Sanna, Simone [Lehrstuhl fuer Theoretische Physik, Universitaet Paderborn (Germany)

2016-07-01

Rare-earth (RE) silicides thin films on silicon surfaces are currently of high interest. They grow nearly defect-free because of the small lattice mismatch, and exhibit very low Schottky-barriers on n-type silicon. They even give rise to the self-organized formation of RE silicide nanowires on the Si(001) and vicinal surfaces. Depending on the amount of deposited RE atoms, a plethora of reconstructions are observed for the RE silicide. While one monolayer leads to the formation of a 1 x 1-reconstruction, several monolayer thick silicides crystallize in a √(3) x √(3) R30 {sup circle} superstructure. Submonolayer RE deposition leads to different periodicities. In this work we investigate the formation of RE silicides thin films on Si(111) within the density functional theory. The energetically favored adsorption site for RE adatoms is determined calculating the potential energy surface. As prototypical RE, Dysprosium is used. Additional calculations are performed for silicides formed by different RE elements. We calculate structural properties, electronic band structures and compare measured and simulated STM images. We consider different terminations for the 5 x 2 reconstruction occurring in the submonolayer regime and investigate their stability by means of ab initio thermodynamics. The same method is employed to predict the stable silicide structure as a function of the deposited RE atoms.

Ion current reduction in pinched electron beam diodes

International Nuclear Information System (INIS)

Quintenz, J.P.; Poukey, J.W.

1977-01-01

A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

Magnetic and electronic properties of SrMnO3 thin films

Science.gov (United States)

Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

2018-05-01

Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

Influence of Wall-Current-Compensation and Secondary-Electron-Emission on the Plasma Parameters and on the Performance of Electron Cyclotron Resonance Ion Sources

International Nuclear Information System (INIS)

Schachter, L.; Dobrescu, S.; Stiebing, K.E.

2005-01-01

Axial and radial diffusion processes determine the confinement time in an ECRIS. It has been demonstrated that a biased disk redirects the ion- and electron currents in the source in such a way that the source performance is improved. This effect is due to a partial cancellation of the compensating currents in the conductive walls of the plasma chamber.In this contribution we present an experiment, where these currents were effectively suppressed by using a metal-dielectric (MD) disk instead of the standard metallic disk in the Frankfurt 14-GHz-ECRIS. Lower values of the plasma potential and higher average charge states in the presence of the MD disk as compared to the case of the standard disk indicate that, due to the insulating properties of its dielectric layer the MD disk obviously blocks compensating wall currents better than applying bias to the metallic standard disk.A comparison with results from experiments with a MD liner in the source, covering essentially the complete radial walls of the plasma chamber, clearly demonstrates that the beneficial effect of the liner on the performance of the ECRIS is much stronger than that observed with the MD-disk. In accord with our earlier interpretation, it has to be concluded that the 'liner-effect' is not just the effect of blocking the compensating wall currents but rather has to be ascribed to the unique property of the thin MD liner as a strong secondary electron emitter under bombardment by charged particles

Start-up of plasma current by electron Bernstein wave

International Nuclear Information System (INIS)

Maekawa, Takashi; Tanaka, Hitoshi; Uehide, Masaki

2009-01-01

Electron cyclotron current drive by electron Bernstein (EB) waves for the start-up and ramp-up of toroidal plasma current with no central solenoid in tokamaks is discussed. It is shown that high N// EB waves have ability to ramp-up the current against the counter voltage from self-induction, where N// is the parallel refractive index to the magnetic field, and they are especially suitable for initial current start-up phase where the bulk electron temperature is low enough to ensure high N// EB waves. (author)

Polycystalline silicon thin films for electronic applications

Energy Technology Data Exchange (ETDEWEB)

Jaeger, Christian Claus

2012-01-15

with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

Study of optically thin electron cyclotron emission from TFTR using a Michelson interferometer

International Nuclear Information System (INIS)

Stauffer, F.J.; Boyd, D.A.

1986-01-01

The TFTR Michelson interferometer, which is used as an electron temperature diagnostic, has a spectral range of 75-540 GHz. This range is adequate for measuring at least the first three cyclotron harmonics, and it spans both optically thick and thin portions of the ECE spectrum. During the most recent opening of the TFTR vacuum vessel, a concave, carbon reflector was installed on the back wall of the vessel, opposite the light collecting optic of the Michelson system. The reflector is designed to prevent the observation of optically thin ECE that originates from a location that is outside the field of view of the light collecting optic. If this is achieved, it should be possible to derive the electron density profile from measurements of either the extraordinary mode third harmonic or the ordinary mode second harmonic. An analysis of ECE spectra that have been measured before and after installation of the reflector is presented

Electronic structure of metastable bcc Cu–Cr alloy thin films: Comparison of electron energy-loss spectroscopy and first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Liebscher, C.H.; Freysoldt, C. [Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf (Germany); Dennenwaldt, T. [Institute of Condensed Matter Physics and Interdisciplinary Center for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland); Harzer, T.P.; Dehm, G. [Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf (Germany)

2017-07-15

Metastable Cu–Cr alloy thin films with nominal thickness of 300 nm and composition of Cu{sub 67}Cr{sub 33} (at%) are obtained by co-evaporation using molecular beam epitaxy. The microstructure, chemical phase separation and electronic structure are investigated by transmission electron microscopy (TEM). The thin film adopts the body-centered cubic crystal structure and consists of columnar grains with ~50 nm diameter. Aberration-corrected scanning TEM in combination with energy dispersive X-ray spectroscopy confirms compositional fluctuations within the grains. Cu- and Cr-rich domains with composition of Cu{sub 85}Cr{sub 15} (at%) and Cu{sub 42}Cr{sub 58} (at%) and domain size of 1–5 nm are observed. The alignment of the interface between the Cu- and Cr-rich domains shows a preference for {110}-type habit plane. The electronic structure of the Cu–Cr thin films is investigated by electron energy loss spectroscopy (EELS) and is contrasted to an fcc-Cu reference sample. The experimental EEL spectra are compared to spectra computed by density functional theory. The main differences between bcc-and fcc-Cu are related to differences in van Hove singularities in the electron density of states. In Cu–Cr solid solutions with bcc crystal structure a single peak after the L{sub 3}-edge, corresponding to a van Hove singularity at the N-point of the first Brillouin zone is observed. Spectra computed for pure bcc-Cu and random Cu–Cr solid solutions with 10 at% Cr confirm the experimental observations. The calculated spectrum for a perfect Cu{sub 50}Cr{sub 50} (at%) random structure shows a shift in the van Hove singularity towards higher energy by developing a Cu–Cr d-band that lies between the delocalized d-bands of Cu and Cr. - Highlights: • Compositional fluctuations on the order of 1–5 nm in Cu- and Cr-rich domains are observed. • EELS determines a single van Hove singularity for bcc Cu–Cr solid solutions. • The electronic structure is dominated by d

Eu-emission quenching by electron screening in VO2 thin films

International Nuclear Information System (INIS)

Liu, H.; Lysenko, S.; Rua, A.; Vikhnin, V.; Vasquez, O.; Fernandez, F.E.

2006-01-01

As a kind of phase transition functional material, Vanadium dioxide (VO 2 ) thin films deposited on fused quartz substrate were fabricated using pulsed laser deposition (PLD) technique. Europium was introduced for structure study. By laser excitation at 526 nm, VO 2 thin film undergoes a reversible and ultrafast phase transition from semiconductor to metallic state, which results in a change of optical properties. In fluorescence measurement, Eu emission was found severely quenched in all as-grown thin films. After annealing the sample in air, a red Eu-emission appeared. The emission spectrum is characterized by a pronounced twin peak, centered at 617 nm ( 5 D - 7 F 2 ), surrounded by a set of broad, but relatively weaker bands (emission from 5 D to 7 F j manifold). The emission lifetime increased when the sample annealed at higher temperature for longer time. Each spectral component is actually a doublet which is the spectral overlap of emissions from Eu 3+ situated in two sites with different configurations. One is a linear h-Eu 3+ -h, where h stands for holes. Another is a right-angle configuration of h-Eu 3+ -h with Eu 3+ in the corner. In as-grown VO 2 film, Eu 3+ ions can either substitute V 4+ , leaving a negative charge around (Eu 3+ -O) - , or substitute V 5+ , leaving two negative charges around (Eu 3+ -O) -- . Due to trapped electrons in a large radius state, it covers Eu 3+ V 4+ -V 5+ complexes. It suggests that the screening by degenerate electronic gas may result in switching off the Eu-related optical response for a wide spectral region, causing emission quenching in VO 2 films

Theoretical study of the transmission of low-energy (0-10 eV) electrons through thin-film organic molecular solids: benzene

International Nuclear Information System (INIS)

Goulet, T.; Jay-Gerin, J.-P.

1986-01-01

A theoretical study of the transmission of low-energy (0 to 10 eV) electrons incident from vacuum through thin-film organic molecular solids deposited on a cold metal substrate is presented and developed for the specific case of solid benzene. In essence, using a semiclassical description of electron transport in solids with an energy-independent scattering mean free path and assuming an isotropic electron scattering, the behavior of a penetrating electron in the film is simulated when a large number of scattering events are present. The good agreement between the calculated electron transmission spectra and those obtained experimentally indicates that our study provides a realistic description of the electron transport in the film, and accounts for the influence of the various electron-molecule scattering processes upon the energy dependence of the transmitted current. In particular, we show that the excitonic subionization energy losses are at the origin of the main structures of the observed electron transmission spectra. It is also shown that our study can successfully be used to estimate the probabilities of the various electron scattering processes which occur in the film, as well as the electron mean free path (l). For solid benzene, l is about 8 A in the considered electron energy range. (author)

Differences observed in the surface morphology and microstructure of Ni-Fe-Cu ternary thin films electrochemically deposited at low and high applied current densities

International Nuclear Information System (INIS)

Sarac, U; Kaya, M; Baykul, M C

2016-01-01

In this research, nanocrystalline Ni-Fe-Cu ternary thin films using electrochemical deposition technique were produced at low and high applied current densities onto Indium Tin Oxide (ITO) coated conducting glass substrates. Change of surface morphology and microstructural properties of the films were investigated. Energy dispersive X-ray spectroscopy (EDX) measurements showed that the Ni-Fe-Cu ternary thin films exhibit anomalous codeposition behaviour during the electrochemical deposition process. From the X-ray diffraction (XRD) analyses, it was revealed that there are two segregated phases such as Cu- rich and Ni-rich within the films. The crystallographic structure of the films was face-centered cubic (FCC). It was also observed that the film has lower lattice micro-strain and higher texture degree at high applied current density. Scanning electron microscopy (SEM) studies revealed that the films have rounded shape particles on the base part and cauliflower-like structures on the upper part. The film electrodeposited at high current density had considerably smaller rounded shape particles and cauliflower-like structures. From the atomic force microscopy (AFM) analyses, it was shown that the film deposited at high current density has smaller particle size and surface roughness than the film grown at low current density. (paper)

Characterization of electron beam deposited thin films of HfO2 and binary thin films of (HfO2:SiO2) by XRD and EXAFS measurements

International Nuclear Information System (INIS)

Das, N.C.; Sahoo, N.K.; Bhattacharyya, D.; Thakur, S.; Kamble, N.M.; Nanda, D.; Hazra, S.; Bal, J.K.; Lee, J.F.; Tai, Y.L.; Hsieh, C.A.

2009-10-01

In this report, we have discussed the microstructure and the local structure of composite thin films having varying hafnia and silica compositions and prepared by reactive electron beam evaporation. XRD and EXAFS studies have confirmed that the pure hafnium oxide thin film has crystalline microstructure whereas the films with finite hafnia and silica composition are amorphous. The result of EXAFS analysis has shown that the bond lengths as well as coordination numbers around hafnium atom change with the variation of hafnia and silica compositions in the thin film. Finally, change of bond lengths has been correlated with change of refractive index and band gap of the composite thin films. (author)

Surface scattering mechanisms of tantalum nitride thin film resistor.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2014-01-01

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

Giant current fluctuations in an overheated single-electron transistor

Science.gov (United States)

Laakso, M. A.; Heikkilä, T. T.; Nazarov, Yuli V.

2010-11-01

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and single-electron tunneling changes to the dominance of the latter. In this interval, the current exhibits anomalous sensitivity to the effective electron temperature of the transistor island and its fluctuations. We present a detailed study of the current and temperature fluctuations at this interesting point. The methods implemented allow for a complete characterization of the distribution of the fluctuating quantities, well beyond the Gaussian approximation. We reveal and explore the parameter range where, for sufficiently small transistor islands, the current fluctuations become gigantic. In this regime, the optimal value of the current, its expectation value, and its standard deviation differ from each other by parametrically large factors. This situation is unique for transport in nanostructures and for electron transport in general. The origin of this spectacular effect is the exponential sensitivity of the current to the fluctuating effective temperature.

A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

Science.gov (United States)

Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

2017-01-01

With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

Fokker-Planck modeling of current penetration during electron cyclotron current drive

International Nuclear Information System (INIS)

Merkulov, A.; Westerhof, E.; Schueller, F. C.

2007-01-01

The current penetration during electron cyclotron current drive (ECCD) on the resistive time scale is studied with a Fokker-Planck simulation, which includes a model for the magnetic diffusion that determines the parallel electric field evolution. The existence of the synergy between the inductive electric field and EC driven current complicates the process of the current penetration and invalidates the standard method of calculation in which Ohm's law is simply approximated by j-j cd =σE. Here it is proposed to obtain at every time step a self-consistent approximation to the plasma resistivity from the Fokker-Planck code, which is then used in a concurrent calculation of the magnetic diffusion equation in order to obtain the inductive electric field at the next time step. A series of Fokker-Planck calculations including a self-consistent evolution of the inductive electric field has been performed. Both the ECCD power and the electron density have been varied, thus varying the well known nonlinearity parameter for ECCD P rf [MW/m -3 ]/n e 2 [10 19 m -3 ] [R. W. Harvey et al., Phys. Rev. Lett 62, 426 (1989)]. This parameter turns out also to be a good predictor of the synergetic effects. The results are then compared with the standard method of calculations of the current penetration using a transport code. At low values of the Harvey parameter, the standard method is in quantitative agreement with Fokker-Planck calculations. However, at high values of the Harvey parameter, synergy between ECCD and E parallel is found. In the case of cocurrent drive, this synergy leads to the generation of large amounts of nonthermal electrons and a concomitant increase of the electrical conductivity and current penetration time. In the case of countercurrent drive, the ECCD efficiency is suppressed by the synergy with E parallel while only a small amount of nonthermal electrons is produced

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Science.gov (United States)

Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

2018-02-01

InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

2016-07-15

Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

Science.gov (United States)

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Method for controlling low-energy high current density electron beams

International Nuclear Information System (INIS)

Lee, J.N.; Oswald, R.B. Jr.

1977-01-01

A method and an apparatus for controlling the angle of incidence of low-energy, high current density electron beams are disclosed. The apparatus includes a current generating diode arrangement with a mesh anode for producing a drifting electron beam. An auxiliary grounded screen electrode is placed between the anode and a target for controlling the average angle of incidence of electrons in the drifting electron beam. According to the method of the present invention, movement of the auxiliary screen electrode relative to the target and the anode permits reliable and reproducible adjustment of the average angle of incidence of the electrons in low energy, high current density relativistic electron beams

High-Current Plasma Electron Sources

International Nuclear Information System (INIS)

Gushenets, J.Z.; Krokhmal, V.A.; Krasik, Ya. E.; Felsteiner, J.; Gushenets, V.

2002-01-01

In this report we present the design, electrical schemes and preliminary results of a test of 4 different electron plasma cathodes operating under Kg h-voltage pulses in a vacuum diode. The first plasma cathode consists of 6 azimuthally symmetrically distributed arc guns and a hollow anode having an output window covered by a metal grid. Plasma formation is initiated by a surface discharge over a ceramic washer placed between a W-made cathode and an intermediate electrode. Further plasma expansion leads to a redistribution of the discharge between the W-cathode and the hollow anode. An accelerating pulse applied between the output anode grid and the collector extracts electrons from this plasma. The operation of another plasma cathode design is based on Penning discharge for preliminary plasma formation. The main glow discharge occurs between an intermediate electrode of the Penning gun and the hollow anode. To keep the background pressure in the accelerating gap at P S 2.5x10 4 Torr either differential pumping or a pulsed gas puff valve were used. The operation of the latter electron plasma source is based on a hollow cathode discharge. To achieve a sharp pressure gradient between the cathode cavity and the accelerating gap a pulsed gas puff valve was used. A specially designed ferroelectric plasma cathode initiated plasma formation inside the hollow cathode. This type of the hollow cathode discharge ignition allowed to achieve a discharge current of 1.2 kA at a background pressure of 2x10 4 Torr. All these cathodes were developed and initially tested inside a planar diode with a background pressure S 2x10 4 Torr under the same conditions: accelerating voltage 180 - 300 kV, pulse duration 200 - 400 ns, electron beam current - 1 - 1.5 kA, and cross-sectional area of the extracted electron beam 113 cm 2

Currents driven by electron cyclotron waves

International Nuclear Information System (INIS)

Karney, C.F.F.; Fisch, N.J.

1981-07-01

Certain aspects of the generation of steady-state currents by electron cyclotron waves are explored. A numerical solution of the Fokker-Planck equation is used to verify the theory of Fisch and Boozer and to extend their results into the nonlinear regime. Relativistic effects on the current generated are discussed. Applications to steady-state tokamak reactors are considered

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

Science.gov (United States)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Assessment of doses caused by electrons in thin layers of tissue-equivalent materials, using MCNP.

Science.gov (United States)

Heide, Bernd

2013-10-01

Absorbed doses caused by electron irradiation were calculated with Monte Carlo N-Particle transport code (MCNP) for thin layers of tissue-equivalent materials. The layers were so thin that the calculation of energy deposition was on the border of the scope of MCNP. Therefore, in this article application of three different methods of calculation of energy deposition is discussed. This was done by means of two scenarios: in the first one, electrons were emitted from the centre of a sphere of water and also recorded in that sphere; and in the second, an irradiation with the PTB Secondary Standard BSS2 was modelled, where electrons were emitted from an (90)Sr/(90)Y area source and recorded inside a cuboid phantom made of tissue-equivalent material. The speed and accuracy of the different methods were of interest. While a significant difference in accuracy was visible for one method in the first scenario, the difference in accuracy of the three methods was insignificant for the second one. Considerable differences in speed were found for both scenarios. In order to demonstrate the need for calculating the dose in thin small zones, a third scenario was constructed and simulated as well. The third scenario was nearly equal to the second one, but a pike of lead was assumed to be inside the phantom in addition. A dose enhancement (caused by the pike of lead) of ∼113 % was recorded for a thin hollow cylinder at a depth of 0.007 cm, which the basal-skin layer is referred to in particular. Dose enhancements between 68 and 88 % were found for a slab with a radius of 0.09 cm for all depths. All dose enhancements were hardly noticeable for a slab with a cross-sectional area of 1 cm(2), which is usually applied to operational radiation protection.

Basic characteristics of thin wire arc plasma

International Nuclear Information System (INIS)

Urushihara, K.; Endoh, N.; Ono, S.; Teii, S.; Ishimura, T.

1998-01-01

The investigated plasma was generated by applying an electric current of about 50 A to a copper wire of 48 μm diameter in air. The development in time of emission spectra was measured and relative line intensity ratios were used to determine the temperature. The extension of the plasma was measured with a movable electrostatic probe which was placed next to the thin wire, and the electron density was estimated using the known electron mobility. The electron temperature was typically about 8000 K. On the other hand, the electron density tended to decrease with time from about 3.10 16 cm -3

Electron Scale Structures and Magnetic Reconnection Signatures in the Turbulent Magnetosheath

Science.gov (United States)

Yordanova, E.; Voros, Z.; Varsani, A.; Graham, D. B.; Norgren, C.; Khotyaintsev, Yu. V.; Vaivads, A.; Eriksson, E.; Nakamura, R.; Lindqvist, P.-A.;

Electronic excitation in transmission of relativistic H- ions through thin foils

International Nuclear Information System (INIS)

Reinhold, C.O.; Kuerpick, P.; Burgdoerfer, J.; Yoshida, S.

1998-01-01

The authors describe a theoretical model to study the transmission of relativistic H - ions through thin carbon foils. The approach is based on a Monte Carlo solution of the Langevin equation describing electronic excitations of the atoms during the transport through the foil. Calculations for the subshell populations of outgoing hydrogen atoms are found to be in good agreement with recent experimental data on an absolute scale and show that there exists a propensity for populating extreme Stark states

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

2017-07-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

Limiting currents of overcompensated electron beams

International Nuclear Information System (INIS)

Malafaev, V.A.

1990-01-01

A possibility of producing recompensated electron beam and increasing its limiting currents in the magnetic field is experimentally investigated. It is shown that such a possibility is realized when the beam is surrounded by a cylindrical net placed into the tube located under the positive potential relative to the net. In this case an increase of limiting current at the expense of increasing the ion life time, takes place. Current, exceeding the Pierce threshold 1.5 times, is obtained

Final report for EMP instrumentation project DNA IACRO 75-815: magnetic thin film sensors

International Nuclear Information System (INIS)

Hsieh, E.J.; Miller, D.E.; Vindelov, K.E.; Brown, T.G.

1975-01-01

The magnetic thin film current sensor/recorder is a passive device which responds to the peak current and pulse shape of a transient event. The transient current information becomes a permanent record on the film. The thin film device is small, low mass and reusable. It has been proven to be fast (less than 1/2 nanosecond response), radiation hard and applicable to peak current measurement of both CW and pulsed signals. The sensors were initially developed at LLL for pulse-energy measurement on exploding wires. Later the Defense Nuclear Agency sponsored the present project to develop the magnetic thin film devices as EMP diagnostic tools. The Air Force Weapons Lab supported the work to test the field capabilities of the thin film devices at ARES test facility, Kirtland AFB. Sandia Lab is now using a new version of the thin film sensors to monitor the transient current induced by intense radiation in their hybrid microcircuits. Also, a field test has been planned with Naval Electronics Laboratory Center where the thin film sensors are to be used to measure peak CW current caused by rf radiation. Research results are summarized

Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

International Nuclear Information System (INIS)

Lutsishin, P.P.; Nakhodkin, T.N.

1982-01-01

The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

Science.gov (United States)

Corneille, Jason Stephen

This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

Generation of stationary current in a tokamak by electron cyclotron waves

International Nuclear Information System (INIS)

Parail, V.V.; Pereverzev, G.V.

1982-01-01

Analytical expression for stationary longitudinal current generated in plasma with electron-cyclotron (EC) waves has been derived on the basis of a kinetic equation for electrons with provision for electron-electron and electron- ion collisions. Comparative analysis of efficiency of current excitation with EC and low hybrid (LH) waves has been carried out. It is shown that under similar conditions (for the same introduced powers and the same intervals of interaction of LH waves and electrons) the current value generated with LH waves turns out to be functionally (Vsub(o)/Vsub(e))sup(2) times higher as compared with the current generated with EC waves (vsub(o)-initial velocity of electrons, Vsub(e)-√2Tsub(e)/m) [ru

Nonextensive electron and ion dust charging currents

International Nuclear Information System (INIS)

Amour, Rabia; Tribeche, Mouloud

2011-01-01

The correct nonextensive electron and ion charging currents are presented for the first time based on the orbit motion limited approach. For -1< q<1, where q measures the amount of plasma nonextensivity, the nonextensive electron charging current is expressed in terms of the hypergeometric function. The variable dust charge is expressed in terms of the Lambert function and we take advantage of this transcendental function to investigate succinctly the effects of nonextensive charge carriers. The obtained formulas bring a possibility to build theories on nonlinear collective process in variable charge nonextensive dusty plasmas.

A single-electron current in a cylindrical nanolayer

International Nuclear Information System (INIS)

Kazaryan, E.M.; Aghekyan, N.G.; Sarkisyan, H.A.

2012-01-01

The orbital current and the spin magnetic moment current of an electron in a cylindrical nanolayer are investigated. It is shown that under certain conditions, the main contribution to the total current is specified by the spin magnetic moment current

Scanning and transmission electron microscopy investigation of multiwall carbon nanotube/nickel oxide nanocomposite thin films

CSIR Research Space (South Africa)

Roro, Kittessa T

2011-12-01

Full Text Available Owing to their unique electronic and optical properties, nanocomposite thin films are widely used for converting solar radiation therapy into other conventional energy forms, such as heat and electricity. Carbon nanotube-based composites which can...

76 FR 65212 - Henkel Corporation, Currently Known as Henkel Electronic Materials, LLC, Electronic Adhesives...

Science.gov (United States)

2011-10-20

..., Currently Known as Henkel Electronic Materials, LLC, Electronic Adhesives Division, Including On-Site Leased..., Electronic Adhesives Division, including on-site leased workers from Aerotek Professional Services, Billerica..., Electronic Adhesives Division had their wages reported under a separate unemployment insurance (UI) tax...

Detection of wall thinning of carbon steel pipe covered with insulation using Pulsed Eddy Current technique

International Nuclear Information System (INIS)

Park, Duckgun; Kishore, M. B.; Lee, D. H.

2013-01-01

The test sample is a ferromagnetic carbon steel pipe having different thickness, covered with a 10 cm plastic insulation laminated by 0.4 mm Al plate to simulate the pipelines in NPPs. The PEC Probe used for the wall thinning detection consists of an excitation coil and a Hall sensor. The excitation coils in the probe is driven by a rectangular bipolar current pulse and the Hall-sensor will detects the resultant field. The Hall sensor output is considered as PEC signal. Results shows that the PEC system can detect wall thinning in an insulated pipeline of the NPPs. Local wall thinning in pipelines affects the structural integrity of industries like nuclear power plants (NPPs). In the present study a pulsed eddy current (PEC) technology to detect the wall thing of carbon steel pipe covered with insulation is developed

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

Directory of Open Access Journals (Sweden)

Sebastian Koslowski

2017-07-01

Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

Injection-limited electron current in a methanofullerene

NARCIS (Netherlands)

Duren, J.K.J. van; Mihailetchi, V.D.; Blom, P.W.M.; Woudenbergh, T. van; Hummelen, J.C.; Rispens, M.T.; Janssen, R.A.J.; Wienk, M.M.

2003-01-01

The dark current of bulk-heterojunction photodiodes consisting of a blend of a methanofullerene (PCBM) as n-type electron acceptor and a dialkoxy-(p-phenylene vinylene) (OC1C10-PPV) as a p-type electron donor sandwiched between electrodes with different work functions has been investigated. With

New channeling effects in the radiative emission of 150 GeV electrons in a thin germanium crystal

International Nuclear Information System (INIS)

Belkacem, A.; Chevallier, M.; Gaillard, M.J.; Genre, R.; Kirsch, R.; Poizat, J.C.; Remillieux, J.; Bologna, G.; Peigneux, J.P.; Sillou, D.; Spighel, M.; Cue, N.; Kimball, J.C.; Marsh, B.; Sun, C.R.

1986-01-01

The orientation dependence of the radiative emission of 150 GeV electrons and positrons incident at small angles with respect to the axial direction of a thin (0.185 mm) Ge crystal has been observed. The processes are well understood, except for channeled electrons, which radiate unexpected high energy photons. (orig.)

Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

Directory of Open Access Journals (Sweden)

Chih-Hung Hsu

2014-01-01

Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

International Nuclear Information System (INIS)

Abdrashitov, S.V.; Bogdanov, O.V.; Dabagov, S.B.; Pivovarov, Yu.L.; Tukhfatullin, T.A.

2013-01-01

Orientation dependences of channeling radiation total yield from relativistic 155–855 MeV electrons at both 〈1 0 0〉 axial and (1 0 0) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam

HEATING AND CURRENT DRIVE BY ELECTRON CYCLOTRON WAVES

International Nuclear Information System (INIS)

Prater, R.

2003-01-01

OAK-B135 The physics model of electron cyclotron heating (ECH) and current drive (ECCD) is becoming well validated through systematic comparisons of theory and experiment. This work has shown that ECH and ECCD can be highly localized and robustly controlled in toroidal plasma confinement systems, leading to applications including stabilization of magnetohydrodynamic (MHD) instabilities like neoclassical tearing modes, control and sustainment of desired profiles of current density and plasma pressure, and studies of localized transport in laboratory plasmas. The experimental work was supported by a broad base of theory based on first principles which is now well encapsulated in linear ray tracing codes describing wave propagation, absorption, and current drive and in fully relativistic quasilinear Fokker-Planck codes describing in detail the response of the electrons to the energy transferred from the wave. The subtle balance between wave-induced diffusion and Coulomb relaxation in velocity space provides an understanding of the effects of trapping of current-carrying electrons in the magnetic well. Strong quasilinear effects and radial transport of electrons, which may broaden the driven current profile, have also been observed under some conditions and appear to be consistent with theory, but in large devices these are usually insignificant. The agreement of theory and experiment, the wide range of established applications, and the technical advantages of ECH support the application of ECH in next-step tokamaks and stellarators

Structural changes in graphene oxide thin film by electron-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Chetna, E-mail: tchetna91@gmail.com [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Lakshmi, G.B.V.S.; Kumar, Sunil; Tripathi, Ambuj [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 10{sup 11} to 2 × 10{sup 13} e{sup −}/cm{sup 2}. Our studies using X-ray diffraction, Raman microscopy and UV–Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Phonon and electron temperature and non-Fourier heat transport in thin layers

Energy Technology Data Exchange (ETDEWEB)

Carlomagno, I.; Cimmelli, V.A. [Department of Mathematics, Computer Science and Economics, University of Basilicata, Campus Macchia Romana, Viale dell' Ateneo Lucano 10, 85100 Potenza (Italy); Sellitto, A. [Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

2017-04-15

We present a thermodynamic model of heat conductor which allows for different temperatures of phonons and electrons. This model is applied to calculate the steady-state radial temperature profile in a circular thin layer. The compatibility of the obtained temperature profiles with the second law of thermodynamics is investigated in view of the requirement of positive entropy production and of a nonlocal constitutive equation for the entropy flux.

Characterization of LH induced current carrying fast electrons in JET

Energy Technology Data Exchange (ETDEWEB)

Ramponi, G.; Airoldi, A. [Consiglio Nazionale delle Ricerche, Milan (Italy). Lab. di Fisica del Plasma; Bartlett, D.; Brusati, M.; Froissard, P.; Gormezano, C.; Rimini, F.; Silva, R.P. da; Tanzi, C.P. [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

1992-12-31

Lower Hybrid Current Drive (LHCD) experiments have recently been made at JET by coupling up to 2.4 MW of RF power at 3.7 GHz, with a power spectrum centered at n{sub ||} = 1.8 {+-} 0.2 corresponding to a resonating electron energy of about 100 keV via Electron Landau Damping. The Current Drive (CD) efficiency has been observed to increase when LH and ICRH power are applied simultaneously to the plasma, suggesting that a part of the fast magnetosonic wave is absorbed on the LH-generated fast electrons. An important problem of CD experiments in tokamaks is the determination of the radial distribution of the driven current and the characterization in the momentum space of the current carrying fast electrons by using appropriate diagnostic tools. For this purpose, a combined analysis of the Electron Cyclotron Emission (ECE) and of the Fast Electron Bremsstrahlung (FEB) measurements has been made, allowing the relevant parameters of the suprathermal electrons to be estimated. (author) 5 refs., 5 figs., 2 tabs.

Characterization of LH induced current carrying fast electrons in JET

International Nuclear Information System (INIS)

Ramponi, G.; Airoldi, A.; Bartlett, D.; Brusati, M.; Froissard, P.; Gormezano, C.; Rimini, F.; Silva, R.P. da; Tanzi, C.P.

1992-01-01

Lower Hybrid Current Drive (LHCD) experiments have recently been made at JET by coupling up to 2.4 MW of RF power at 3.7 GHz, with a power spectrum centered at n || = 1.8 ± 0.2 corresponding to a resonating electron energy of about 100 keV via Electron Landau Damping. The Current Drive (CD) efficiency has been observed to increase when LH and ICRH power are applied simultaneously to the plasma, suggesting that a part of the fast magnetosonic wave is absorbed on the LH-generated fast electrons. An important problem of CD experiments in tokamaks is the determination of the radial distribution of the driven current and the characterization in the momentum space of the current carrying fast electrons by using appropriate diagnostic tools. For this purpose, a combined analysis of the Electron Cyclotron Emission (ECE) and of the Fast Electron Bremsstrahlung (FEB) measurements has been made, allowing the relevant parameters of the suprathermal electrons to be estimated. (author) 5 refs., 5 figs., 2 tabs

New initiatives for producing high current electron accelerators

International Nuclear Information System (INIS)

Faehl, R.J.; Keinigs, R.K.; Pogue, E.W.

1996-01-01

New classes of compact electron accelerators able to deliver multi-kiloamperes of pulsed 10-50 MeV electron beams are being studied. One class is based upon rf linac technology with dielectric-filled cavities. For materials with ε/ε o >>1, the greatly increased energy storage permits high current operation. The second type is a high energy injected betatron. Circulating current limits scale as Β 2 γ 3

Critical current density measurement of thin films by AC susceptibility based on the penetration parameter h

DEFF Research Database (Denmark)

Li, Xiao-Fen; Grivel, Jean-Claude; Abrahamsen, Asger B.

2012-01-01

We have numerically proved that the dependence of AC susceptibility χ of a E(J) power law superconducting thin disc on many parameters can be reduced to one penetration parameter h, with E the electric field and J the current density. Based on this result, we propose a way of measuring the critical...... current density Jc of superconducting thin films by AC susceptibility. Compared with the normally used method based on the peak of the imaginary part, our method uses a much larger range of the AC susceptibility curve, thus allowing determination of the temperature (T) dependence of Jc from a normally...

Modification of the Current Profile in DIII-D by Off-Axis Electron Cyclotron Current Drive

International Nuclear Information System (INIS)

Luce, T.C.; Lin-Liu, Y.R.; Harvey, R.W.; Giruzzi, G.; Lohr, J.M.; Petty, C.C.; Politzer, P.A.; Prater; Rice, B.W.

1999-01-01

Localized non-inductive currents due to electron cyclotron wave absorption have been measured on the DIII-D tokamak. Clear evidence of the non-inductive currents is seen on the internal magnetic field measurements by motional Stark effect spectroscopy. The magnitude and location of the non-inductive current is evaluated by comparing the total and Ohmic current profiles of discharges with and without electron cyclotron wave power. The measured current agrees with Fokker-Planck calculations near the magnetic axis, but exceeds the predicted value as the location of the current drive is moved to the half radius

Implementation of Carbon Thin Film Coatings in the Super Proton Synchrotron (SPS) for Electron Cloud Mitigation

CERN Document Server

Costa Pinto, P; Basso, T; Edwards, P; Mensi, M; Sublet, A; Taborelli, M

2014-01-01

Low Secondary Electron Yield (SEY) carbon thin films eradicate electron multipacting in accelerator beam pipes. Two magnetic cells of the SPS were coated with such material and installed. In total more than forty vacuum vessels and magnet interconnections were treated. The feasibility of the coating process was validated. The performance of the carbon thin film will be tested with LHC nominal beams after the end of the long shutdown 1. Particular attention will be drawn to the long term behaviour. This paper presents the sputtering techniques used to coat the different components; their characterization (SEY measurements on coupons, RF multipacting tests and pump down curves); and the technology to etch the carbon film in case of a faulty coating. The strategy to coat the entire SPS will also be described.

Dose response of thin-film dosimeters irradiated with 80-120 keV electrons

DEFF Research Database (Denmark)

Helt-Hansen, J.; Miller, A.; Sharpe, P.

2005-01-01

Thin-film dosimeters (Riso B3 and alanine films) were irradiated at 10 MeV and 80-120 keV electron accelerators, and it has been shown that the radiation response of the dosimeter materials (the radiation chemical yields) are constant at these irradiation energies. However, dose gradients within ...... are present within the dosimeter. (C) 2005 Elsevier Ltd. All rights reserved....

Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

Science.gov (United States)

Habermeier, H.-U.

2008-10-01

Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

International Nuclear Information System (INIS)

Habermeier, H-U

2008-01-01

Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

Electron cyclotron resonance heating and current drive

Energy Technology Data Exchange (ETDEWEB)

Fidone, I.; Castejon, F.

1992-07-01

A brief summary of the theory and experiments on electron- cyclotron heating and current drive is presented. The general relativistic formulation of wave propagation and linear absorption is considered in some detail. The O-mode and the X-mode for normal and oblique propagation are investigated and illustrated by several examples. The experimental verification of the theory in T-10 and D- III-D is briefly discussed. Quasilinear evolution of the momentum distribution and related applications as, for instance, non linear wave, damping and current drive, are also considered for special cases of wave frequencies, polarization and propagation. In the concluding section we present the general formulation of the wave damping and current drive in the absence of electron trapping for arbitrary values of the wave frequency. (Author) 13 refs.

Electron - cyclotron resonance heating and current drive

International Nuclear Information System (INIS)

Fidone, I.; Castejon, F.

1992-01-01

A brief summary of the theory and experiments on electron- cyclotron heating and current drive is presented. The general relativistic formulation of wave propagation and linear absorption is considered in some detail. The O-mode and the X-mode for normal and oblique propagation are investigated and illustrated by several examples. The experimental verification of the theory in T-10 and D- III-D is briefly discussed. Quasilinear evolution of the momentum distribution and related applications as, for instance, non linear wave, damping and current drive, are also considered for special cases of wave frequencies, polarization and propagation. In the concluding section we present the general formulation of the wave damping and current drive in the absence of electron trapping for arbitrary values of the wave frequency. (Author) 13 refs

Electron-cyclotron resonance heating and current drive

International Nuclear Information System (INIS)

Filone, I.

1992-01-01

A brief summary of the theory and experiments on electron-cyclotron heating and current drive is presented. the general relativistic formulation of wave propagation and linear absorption is considered in some detail. The O-mode and the X-mode for normal and oblique propagation are investigated and illustrated by several examples. The experimental verification of the theory in T-10 and D-III-D is briefly discussed. Quasilinear evolution of the momentum distribution and related applications as, for instance, non linear wave damping and current drive, are also considered for special cases of wave frequencies, polarization and propagation. In the concluding section we present the general formulation of the wave damping and current drive in the absence of electron trapping for arbitrary values of the wave frequency. (author) 8 fig. 13 ref

The processing of heteroepitaxial thin-film diamond for electronic applications

International Nuclear Information System (INIS)

McGrath, J.

1998-09-01

Thin film diamond is of particular interest because of its wide applicability, including its potential use in high temperature electronics. This thesis describes a study of some of the processing stages required to exploit thin film diamond as an electronic device. Initial experiments were carried out to optimise bi-metallic contact schemes on orientated diamond film using electrical measurements and chemical analysis. Temperature stability was also investigated and it was concluded that the most favourable ohmic contact scheme is aluminium-on-titanium. Further electrical measurements confirmed that the contribution of resistance made by the contacts themselves to the metal/diamond/metal system overall was acceptably low, specifically 6 Ω.cm 2 for an undoped diamond system and less than 3 x 10 -6 Ω.cm 2 for boron doped diamond. To improve the as-grown resistivity of diamond films, an oxygen/argon plasma etch process was applied. The input parameters of the plasma system were optimised to give the maximum achievable resistivity of 4 x 10 11 Ω.cm. This was attained using a statistical design procedure via analysis of resistivity and etch rate outputs. Having optimised post growth treatment and contact metallisation, undoped and doped orientated diamond films were characterised via voltage and temperature dependencies. It was concluded that the dominant charge transport mechanisms for undoped diamond, nitrogen and boron doped diamond were variable range hopping at low temperatures up to 523 K and grain boundary effects. At higher temperatures, valence or impurity band conduction appeared to be the probable mechanisms with activation energies of 0.23 eV for nitrogen doped diamond and 0.08 eV for boron doped diamond. Preliminary experiments electrical properties of diamond and initial results suggested the presence of a high density of recombination centres. The final stage of experimental research initiated a study of direct electron beam writing lithography to

FWCD (fast wave current drive) and ECCD (electron cyclotron current drive) experiments on DIII-D

International Nuclear Information System (INIS)

Prater, R.; Austin, M.; Baity, F.W.

1994-01-01

Fast wave current drive and electron cyclotron current drive experiments have been performed on the DIII-D tokamak as part of the advanced tokamak program. The goal of this program is to develop techniques for controlling the profile of the current density in order to access regimes of improved confinement and stability. The experiments on fast wave current drive used a four strap antenna with 90deg phasing between straps. A decoupler was used to help maintain the phasing, and feedback control of the plasma position was used to keep the resistive loading constant. RF pickup loops demonstrate that the directivity of the antenna is as expected. Plasma currents up to 0.18 MA were driven by 1.5 MW of fast wave power. Electron cyclotron current drive experiments at 60 GHz have shown 0.1 MA of plasma current driven by 1 MW of power. New fast wave and electron cyclotron heating systems are in development for DIII-D, so that the goals of the advanced tokamak program can be carried out. (author)

Anomalous resistivity due to kink modes in a thin current sheet

International Nuclear Information System (INIS)

Moritaka, Toseo; Horiuchi, Ritoku; Ohtani, Hiroaki

2007-01-01

The roles of microscopic plasma instabilities on the violation of the frozen-in constraint are investigated by examining the force balance equation based on explicit electromagnetic particle simulation for a thin current sheet. Wave-particle interactions associated with lower hybrid drift instability and drift kink instability (DKI) contribute to the wavy electric force term at the periphery of the current sheet and the wavy magnetic force term at the neutral sheet, respectively. In the linear growing phase of DKI, the wavy magnetic force term balances with the electric force term due to the dc electric field at the neutral sheet. It is concluded that the growth of DKI can create anomalous resistivity and result in the violation of the frozen-in constraint as well as the diffusion of current density

A Self-Powered Thin-Film Radiation Detector Using Intrinsic High-Energy Current (HEC) (Author’s Final Version)

Science.gov (United States)

2016-09-08

of electromagnetic 85 pulse effects on cables and electrical devices4 and as a self - powered detector for in-core neutron flux measurement in nuclear...AFCEC-CX-TY-TP-2016-0003 A SELF - POWERED THIN-FILM RADIATION DETECTOR USING INTRINSIC HIGH-ENERGY CURRENT (HEC) (AUTHOR’S FINAL VERSION...14 -- 5 Oct 15 A self - powered thin-film radiation detector using intrinsic high-energy current (HEC) (Author’s Final Version) FA8051-15-P-0010

Liquid crystals for organic thin-film transistors

Science.gov (United States)

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

2015-04-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Guiding effect of bent macroscopic quartz tube for high current electron beam

International Nuclear Information System (INIS)

Zhang Mingwu; Chen Jing; Wu Yehong; Yang Bian; Wang Wei; Xue Yingli; Yu Deyang; Cai Xiaohong

2012-01-01

By using an incident electron beam with the high current and high energy, the guiding effect of the bent macroscopic quartz tube for the electron beam has been investigated. The angular distributions of outgoing electrons depending on the current and energy of incident electrons were measured. The dependences of electron transmitted fraction on energy and current of incident electrons are also shown. As the incident electron energy increasing, the electron transmitted fraction increases, but it decreases while the incident electron current increasing. The results have been compared with the present data. This work presents, the process of guiding electrons is essentially different from that of guiding highly charged ions, the guiding electron beam was caused by both elastic and inelastic collisions between electrons and inner walls of quartz tube, rather than self-organized charging effect on the surface of inner wall of quartz tube. (authors)

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

Effect of Secondary Electron Emission on Electron Cross-Field Current in E×B Discharges

Energy Technology Data Exchange (ETDEWEB)

Yevgeny Raitses, Igor D. Kaganovich, Alexander Khrabrov, Dmytro Sydorenko, Nathaniel J. Fisch and Andrei Smolyakov

2011-02-10

This paper reviews and discusses recent experimental, theoretical, and numerical studies of plasma-wall interaction in a weakly collisional magnetized plasma bounded with channel walls made from different materials. A lowpressure ExB plasma discharge of the Hall thruster was used to characterize the electron current across the magnetic field and its dependence on the applied voltage and electron-induced secondary electron emission (SEE) from the channel wall. The presence of a depleted, anisotropic electron energy distribution function with beams of secondary electrons was predicted to explain the enhancement of the electron cross-field current observed in experiments. Without the SEE, the electron crossfield transport can be reduced from anomalously high to nearly classical collisional level. The suppression of SEE was achieved using an engineered carbon velvet material for the channel walls. Both theoretically and experimentally, it is shown that the electron emission from the walls can limit the maximum achievable electric field in the magnetized plasma. With nonemitting walls, the maximum electric field in the thruster can approach a fundamental limit for a quasineutral plasma.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

A model for electron currents near a field null

International Nuclear Information System (INIS)

Stark, R.A.; Miley, G.H.

1987-01-01

The fluid approximation is invalid near a field null, since the local electron orbit size and the magnetic scale length are comparable. To model the electron currents in this region we propose a single equation of motion describing the bulk electron dynamics. The equation applies to the plasma within one thermal orbit size of the null. The region is treated as unmagnetized; electrons are accelerated by the inductive electric field and drag on ions; damping is provided by viscosity due to electrons and collisions with ions. Through variational calculations and a particle tracking code for electrons, the size of the terms in the equation of motion have been estimated. The resulting equation of motion combines with Faraday's Law to produce a governing equation which implicitly contains the self inductive field of the electrons. This governing equation predicts that viscosity prevents complete cancellation of the ion current density by the electrons in the null region. Thus electron dynamics near the field null should not prevent the formation and deepening of field reversal using neutral-beam injection

On the theory of inelastic scattering of slow electrons by surface excitations: 2. Thin film formalism

International Nuclear Information System (INIS)

Nkoma, J.S.

1982-08-01

A quantum-mechanical theory for the inelastic scattering of slow electrons (ISSE) by surface excitations in a thin film is developed. The scattered wave function inside the thin film is obtained by solving the inhomogeneous Schroedinger equation, and it is found to contain terms which show that the back scattered intensity is smaller than the forward scattered intensity. A scattering cross-section for forward scattering is derived and is found to be dependent on transmission factors, wavevectors and fluctuations of the scattering potential. (author)

Memristive properties of transparent oxide semiconducting (Ti,Cu)O x -gradient thin film

Science.gov (United States)

Domaradzki, Jarosław; Kotwica, Tomasz; Mazur, Michał; Kaczmarek, Danuta; Wojcieszak, Damian

2018-01-01

The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

International Nuclear Information System (INIS)

Sah, C.-T.; Jie Binbin

2009-01-01

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

ELECTRON CYCLOTRON CURRENT DRIVE EFFICIENCY IN GENERAL TOKAMAK GEOMETRY

International Nuclear Information System (INIS)

LIN-LUI, Y.R; CHAN, V.S; PRATER, R.

2003-01-01

Green's-function techniques are used to calculate electron cyclotron current drive (ECCD) efficiency in general tokamak geometry in the low-collisionality regime. Fully relativistic electron dynamics is employed in the theoretical formulation. The high-velocity collision model is used to model Coulomb collisions and a simplified quasi-linear rf diffusion operator describes wave-particle interactions. The approximate analytic solutions which are benchmarked with a widely used ECCD model, facilitate time-dependent simulations of tokamak operational scenarios using the non-inductive current drive of electron cyclotron waves

Electron and ion currents relevant to accurate current integration in MeV ion backscattering spectrometry

International Nuclear Information System (INIS)

Matteson, S.; Nicolet, M.A.

1979-01-01

The magnitude and characteristics of the currents which flow in the target and the chamber of an MeV ion backscattering spectrometer are examined. Measured energy distributions and the magnitude of high-energy secondary electron currents are reported. An empirical universal curve is shown to fit the energy distribution of secondary electrons for several combinations of ion energy, targets and ion species. The magnitude of tertiary electron currents which arise at the vacuum vessel walls is determined for various experimental situations and is shown to be non-negligible in many cases. An experimental arrangement is described which permits charge integrations to 1% arruracy without restricting access to the target as a Faraday cage does. (Auth.)

Hard electronics; Hard electronics

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

2000-05-01

The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

Correlation Spectroscopy of Surfaces, Thin Films, and Nanostructures

CERN Document Server

Berakdar, Jamal

2004-01-01

Here, leading scientists present an overview of the most modern experimental and theoretical methods for studying electronic correlations on surfaces, in thin films and in nanostructures. In particular, they describe in detail coincidence techniques for studying many-particle correlations while. critically examining the informational content of such processes from a theoretical point viewpoint. Furthermore, the book considers the current state of incorporating many-body effects into theoretical approaches. Covered topics:. -Auger-electron photoelectron coincidence experiments and theories. -Co

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

Science.gov (United States)

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

Electronic structure and magnetic properties of Ni-doped SnO2 thin films

Science.gov (United States)

Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

2018-05-01

This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

Nb3Al thin film deposition for low-noise terahertz electronics

International Nuclear Information System (INIS)

Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H

2008-01-01

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb 3 Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons

The thin layer technique and its application to electron microscopy

International Nuclear Information System (INIS)

Ranc, G.

1957-10-01

This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [fr

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

Science.gov (United States)

KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

2018-05-01

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

Determination of diffusion coefficients in polypyrrole thin films using a current pulse relaxation method

Science.gov (United States)

Penner, Reginald M.; Vandyke, Leon S.; Martin, Charles R.

1987-01-01

The current pulse E sub oc relaxation method and its application to the determination of diffusion coefficients in electrochemically synthesized polypyrrole thin films is described. Diffusion coefficients for such films in Et4NBF4 and MeCN are determined for a series of submicron film thicknesses. Measurement of the double-layer capacitance, C sub dl, and the resistance, R sub u, of polypyrrole thin films as a function of potential obtained with the galvanostatic pulse method is reported. Measurements of the electrolyte concentration in reduced polypyrrole films are also presented to aid in the interpretation of the data.

Dependence of critical current density on crystalline direction in thin YBCO films

DEFF Research Database (Denmark)

Paturi, P.; Peurla, M.; Raittila, J.

2005-01-01

The dependence of critical current density (J(c)) on the angle between the current direction and the (100) direction in the ab-plane of thin YBCO films deposited on (001)-SrTiO3 from natiocrystalline and microcrystalline targets is studied using magneto-optical microscopy. In the films made from...... the nanocrystalline target it is found that J(c) does not depend on the angle whereas J(c) decreases with increasing angle in the films made from the microcrystalline target. The films were characterized by detailed X-ray diffraction measurements. The findings are explained in terms of a network of planar defects...

Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

2015-10-01

Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2012-01-01

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

Interaction of high-current relativistic electron beams with plasma. Physical nature of the phenomenon and its application in microwave electronics

International Nuclear Information System (INIS)

Rukhadze, A.A.

1981-01-01

Pulsed high-current electron beams with characteristic parameters: electron energy 10 5 -10 7 eV, electron current 10 3 -10 6 A, pulse duration 10 -8 -10 -6 s, beam energy 10 2 -10 6 J and power 10 8 -10 13 W, are widely used in different branches of science and technology such as controlled thermonuclear fusion, relativistic microwave electronics, powerful semiconductors, chemical and gaseous lasers, new principles of heavy-ion acceleration, and long-distance energy transmission. The paper discusses a new branch of science - pulsed high-current electronics, which has its own experimental technique and methods of theoretical analysis. Parts I and II determine what is meant by ''high current'' in an electron beam and calculate the maximum obtainable current values; these calculations are made for the simplest geometrical configurations realizable in practice. Current methods for theoretical analysis of high-current electron beam physics are described, together with classification of current experimental devices for generating such beams according to high-current parameters. The stability of electron beams is discussed and the concept of critical currents is introduced. Part III gives a detailed account of plasma-beam instability which occurs on the interaction of a high-current electron beam with high-density space-limited plasma. The linear and non-linear stages of beam instability are considered. The given theory is used for calculations for amplifiers and microwave generators of electromagnetic radiation. Finally, the experimental achievements in high-current relativistic microwave electronics are reviewed. (author)

Ce-doping effects on electronic structures of Ba0.5Sr0.5TiO3 thin film

International Nuclear Information System (INIS)

Wang, S Y; Cheng, B L; Wang, Can; Button, T W; Dai, S Y; Jin, K J; Lu, H B; Zhou, Y L; Chen, Z H; Yang, G Z

2006-01-01

In order to clarify the basic reason why Ce doping can dramatically decrease the leakage current in Ba 0.5 Sr 0.5 TiO 3 (BST) as reported in our previous work (Wang et al 2005 J. Phys. D: Appl. Phys. 38 2253), we have employed x-ray photoelectron spectroscopy (XPS) and the optical transmittance technique to study the electronic structure of undoped and 1.0 at% Ce-doped BST (CeBST) films fabricated by pulsed laser deposition. XPS results show that Ce doping has a strong influence on the valence band and core levels of BST films, and that the Fermi level is lowered by about 0.35 eV by Ce doping. Optical transmittance measurements demonstrate that the energy gap is expanded with Ce doping. These Ce-doping effects can induce an increase in the barrier height for the thermionic emission and eventually reduce leakage current in CeBST thin films

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

Science.gov (United States)

Noda, Kei; Wakatsuki, Yusuke; Yamagishi, Yuji; Wada, Yasuo; Toyabe, Toru; Matsushige, Kazumi

2013-02-01

The current enhancement mechanism in contact-area-limited doping for bottom-gate, bottom-contact (BGBC) p-channel organic thin-film transistors (OTFTs) was investigated both by simulation and experiment. Simulation results suggest that carrier shortage and large potential drop occur in the source-electrode/channel interface region in a conventional BGBC OTFT during operation, which results in a decrease in the effective field-effect mobility. These phenomena are attributed to the low carrier concentration of active semiconductor layers in OTFTs and can be alleviated by contact-area-limited doping, where highly doped layers are prepared over source-drain electrodes. According to two-dimensional current distribution obtained from the device simulation, a current flow from the source electrode to the channel region via highly doped layers is generated in addition to the direct carrier injection from the source electrode to the channel, leading to the enhancement of the drain current and effective field-effect mobility. The expected current enhancement mechanism in contact-area-limited doping was experimentally confirmed in typical α-sexithiophene (α-6T) BGBC thin-film transistors.

Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

International Nuclear Information System (INIS)

Wu, Haoran; Susanto, Amelia; Lian, Keryn

2017-01-01

Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

Energy Technology Data Exchange (ETDEWEB)

Wu, Haoran, E-mail: haoran.wu@mail.utoronto.ca; Susanto, Amelia; Lian, Keryn

2017-02-01

Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

Electromotive Potential Distribution and Electronic Leak Currents in Working YSZ Based SOCs

DEFF Research Database (Denmark)

Mogensen, Mogens Bjerg; Jacobsen, Torben

2009-01-01

The size of electronic leak currents through the YSZ electrolyte of solid oxide cells have been calculated using basic solid state electrochemical relations and literature data. The distribution of the electromotive potential, of Galvani potential, of concentration of electrons, e, and electron...... holes, h, was also calculated as these parameters are the basis for the understanding of the electronic conductivity that causes the electronic leak currents. The results are illustrated with examples. The effects of electrolyte thickness, temperature and cell voltage on the electronic leak current...

High current density M-type cathodes for vacuum electron devices

International Nuclear Information System (INIS)

Li Ji; Yu Zhiqiang; Shao Wensheng; Zhang Ke; Gao Yujuan; Yuan Haiqing; Wang Hui; Huang Kaizhi; Chen Qilue; Yan Suqiu; Cai Shaolun

2005-01-01

We investigated high current density emission capabilities of M-type cathodes used for vacuum electron devices (VEDs). The experimental results of emission and lifetime evaluating in both close-spaced diode structure and electron gun testing vehicles are given. Emission current densities measured in the diode structure at 1020 deg. C Br in the CW mode were above 10 A/cm 2 ; while in electron gun testing vehicles, emission current densities were above 8 A/cm 2 in CW mode and above 32 A/cm 2 in pulsed mode, respectively. The current density above 94 A/cm 2 has been acquired in no. 0306 electron gun vehicle while the practical temperature is 1060 deg. C Br . For a comparison some of the data from I-scandate cathodes are presented. Finally, several application examples in practical travelling wave tubes (TWTs) and multi beam klystrons (MBKs) are also reported

A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

Directory of Open Access Journals (Sweden)

Sudheer

2017-07-01

Full Text Available The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm deposited on the formvar film (substrate by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs change with an increase in the film thickness (0.7 to 2.8 nm. Nearly spherical Au NPs are obtained for 6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ∼0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm during solid-state dewetting and recrystallization of the grains.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

Science.gov (United States)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Relativistic current sheets in electron-positron plasmas

International Nuclear Information System (INIS)

Zenitani, S.

2008-01-01

The current sheet structure with magnetic field reversal is one of the fundamental structure in space and astrophysical plasmas. It draws recent attention in high-energy astrophysical settings, where relativistic electron-positron plasmas are considered. In this talk we will review the recent progress of the physical processes in the relativistic current sheet. The kinetic stability of a single current sheet, the nonlinear behavior of these instabilities, and recent challenges on the multi current sheet systems are introduced. We will also introduce some problems of magnetic reconnection in these relativistic environments. (author)

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

Science.gov (United States)

Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

2014-11-01

A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

International Nuclear Information System (INIS)

Walenza-Slabe, J.; Gibbons, B. J.

2016-01-01

Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Electronic properties of dioctylterthiophene-based organic thin-film transistors: A Kelvin probe force microscopy study

International Nuclear Information System (INIS)

Afsharimani, N.; Nysten, B.

2013-01-01

It appeared in the past decades that semi-conducting organic liquid crystals could be used as the active layer in organic thin film transistors (OTFTs). They can be processed by simple methods such as inkjet printing, which paves the way to applications for cheap plastic electronics such as electronic tags, biosensors, and flexible screens. However, the measured field-effect mobility in these OTFTs is relatively low compared to inorganic devices. Generally, such low field-effect mobility values result from extrinsic effects such as grain boundaries or imperfect interfaces with source and drain electrodes. It has been shown that reducing the number of grain boundaries between the source and drain electrodes improves the field effect mobility. Therefore, it is important to understand the transport mechanisms by studying the local structure and electronic properties of organic thin films within the channel and at the interfaces with source and drain electrodes in order to improve the field-effect mobility in OTFTs. Kelvin probe force microscopy (KPFM) is an ideal tool for that purpose since it allows to simultaneously investigate the local structure and the electrical potential distribution in electronic devices. In this work, the structure and the electrical properties of OTFTs based on dioctylterthiophene (DOTT) were studied. The transistors were fabricated by spin-coating DOTT on the transistor structures with untreated and treated (silanized) channel silicon oxide. The potential profiles across the channel and at the metal-electrode interfaces were measured by KPFM. The effect of surface treatment on the electrical properties, charge trapping phenomenon and hysteresis effects is demonstrated and analyzed. - Highlights: • Kelvin probe force microscopy study of organic thin film transistors. • Cost and time savings by using solution processable molecules as active layers. • Smaller crystals and less charge trapping effects in silanized devices. • Decrement

Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

International Nuclear Information System (INIS)

Wang, C.-H.; Fan, L.-J.; Yang, Y.-W.; Su, J.-W.; Chan, S.-W.; Chen, M.-C.

2010-01-01

A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of ∼40 μm is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

International Nuclear Information System (INIS)

Qiang Lei; Yao Ruo-He

2012-01-01

Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290-360 K, and the results fit well with the experimental data

DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

2016-07-01

Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

Digital processing with single electrons for arbitrary waveform generation of current

Science.gov (United States)

Okazaki, Yuma; Nakamura, Shuji; Onomitsu, Koji; Kaneko, Nobu-Hisa

2018-03-01

We demonstrate arbitrary waveform generation of current using a GaAs-based single-electron pump. In our experiment, a digital processing algorithm known as delta-sigma modulation is incorporated into single-electron pumping to generate a density-modulated single-electron stream, by which we demonstrate the generation of arbitrary waveforms of current including sinusoidal, square, and triangular waves with a peak-to-peak amplitude of approximately 10 pA and an output bandwidth ranging from dc to close to 1 MHz. The developed current generator can be used as the precise and calculable current reference required for measurements of current noise in low-temperature experiments.

Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

International Nuclear Information System (INIS)

O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

2006-01-01

Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

Science.gov (United States)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Research progress of VO2 thin film as laser protecting material

Science.gov (United States)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

International Nuclear Information System (INIS)

Chen Yan; Dong Guosheng; Zhang Ming

1995-01-01

The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

International Nuclear Information System (INIS)

Zhang Peng; Hung, Derek M H; Lau, Y Y

2013-01-01

The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

Effect of Secondary Electron Emission on Electron Cross-Field Current in E x B Discharges

International Nuclear Information System (INIS)

Raitses, Yevgeny; Kaganovich, Igor D.; Khrabrov, Alexander; Sydorenko, Dmytro; Fisch, Nathaniel J.; Smolyakov, Andrei

2011-01-01

This paper reviews and discusses recent experimental, theoretical, and numerical studies of plasma-wall interaction in a weakly collisional magnetized plasma bounded with channel walls made from different materials. A lowpressure ExB plasma discharge of the Hall thruster was used to characterize the electron current across the magnetic field and its dependence on the applied voltage and electron-induced secondary electron emission (SEE) from the channel wall. The presence of a depleted, anisotropic electron energy distribution function with beams of secondary electrons was predicted to explain the enhancement of the electron cross-field current observed in experiments. Without the SEE, the electron crossfield transport can be reduced from anomalously high to nearly classical collisional level. The suppression of SEE was achieved using an engineered carbon velvet material for the channel walls. Both theoretically and experimentally, it is shown that the electron emission from the walls can limit the maximum achievable electric field in the magnetized plasma. With nonemitting walls, the maximum electric field in the thruster can approach a fundamental limit for a quasineutral plasma.

Standard-free electron-probe microanalysis of thin films of HTSC-oxide and semiconductors (h<1μm)

International Nuclear Information System (INIS)

Kvardakov, A.M.; Mikhajlova, A.Ya.; San'gin, V.P.; Lazarev, V.B.

1993-01-01

A simplified variant of the standard-free electron-probe microanalysis is elaborated to carry out rapid analysis of chemical composition of >1μm thickness thin films of high-temperature superconductor oxides and semiconductors on alien substrates. The suggested technique has increased the efficiency of search for optimal conditions of preparation YBa 2 Cu 3 O x thin films existing in magnetron and InSb ion-beam techniques of spraying on SrTiO 3 and α-Al 2 O 3 monocrystal base substrates

Calculation of electron-beam induced displacement in thin films by using parameter-reduced formulas

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang [College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001 (China); Chen, Di [Department of Nuclear Engineering, Texas A& M University, College Station, TX 77843 (United States); Wang, Qingyu; Li, Zhongyu [College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001 (China); Shao, Lin, E-mail: lshao@tamu.edu [Department of Nuclear Engineering, Texas A& M University, College Station, TX 77843 (United States)

2017-03-01

Based on the Mott cross sections of relativistic electron collisions with atoms, we calculate displacement creation by electron beams of arbitrary energies (up to 100 MeV) in thin films of arbitrary atomic numbers (up to Z = 90). In a comparison with Mont Carlo full damage cascade simulations, we find that total number of displacements in a film can be accurately estimated as the product of average displacements created per collision and average collision numbers in the film. To calculate average displacements per electron-atom collision, energy transfer from Mott cross section is combined with NRT model. To calculate collision numbers, mean deflection angles and multi-scattering theory are combined to extract collision number dependence on film thickness. For each key parameter, parameter-reduced formulas are obtained from data fitting. The fitting formulas provide a quick and accurate method to estimate radiation damage caused by electron beams.

Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

Science.gov (United States)

Mäckel, Helmut; MacKenzie, Roderick C. I.

2018-03-01

Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

EGaIn-Assisted Room-Temperature Sintering of Silver Nanoparticles for Stretchable, Inkjet-Printed, Thin-Film Electronics.

Science.gov (United States)

Tavakoli, Mahmoud; Malakooti, Mohammad H; Paisana, Hugo; Ohm, Yunsik; Marques, Daniel Green; Alhais Lopes, Pedro; Piedade, Ana P; de Almeida, Anibal T; Majidi, Carmel

2018-05-29

Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. Ultrathin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust thin-film circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

Science.gov (United States)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

Science.gov (United States)

Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

2017-11-01

In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

Electron cyclotron heating for current profile control of non-circular plasmas

International Nuclear Information System (INIS)

Chan, V.S.; Davidson, R.; Guest, G.; Hacker, M.; Miller, L.

1981-01-01

Electron Cyclotron Heating (ECH) offers a promising approach to modifying the radial profiles of electron temperature and plasma current in tokamaks to increase the ideal MHD beta limits and permit experimental access to particular noncircular cross-section tokamaks that cannot be achieved with the peaked current profiles characteristic of ohmically heated tokamaks. We use a one-and-one-half-dimensional, time-dependent transport model that incorporates a self-consistent model of electron cyclotron power absorption to study the temporal evolution of electron temperature and plasma current profiles and the resulting noncircular equilibria. Startup scenarios for high-beta dees and doublets are investigated with this transport modeling

ELECTRON CYCLOTRON CURRENT DRIVE IN DIII-D: EXPERIMENT AND THEORY

International Nuclear Information System (INIS)

PRATER, R; PETTY, CC; LUCE, TC; HARVEY, RW; CHOI, M; LAHAYE, RJ; LIN-LIU, Y-R; LOHR, J; MURAKAMI, M; WADE, MR; WONG, K-L

2003-01-01

A271 ELECTRON CYCLOTRON CURRENT DRIVE IN DIII-D: EXPERIMENT AND THEORY. Experiments on the DIII-D tokamak in which the measured off-axis electron cyclotron current drive has been compared systematically to theory over a broad range of parameters have shown that the Fokker-Planck code CQL3D provides an excellent model of the relevant current drive physics. This physics understanding has been critical in optimizing the application of ECCD to high performance discharges, supporting such applications as suppression of neoclassical tearing modes and control and sustainment of the current profile

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

Science.gov (United States)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Single-electron states near a current-carrying core

International Nuclear Information System (INIS)

Masale, M.

2004-01-01

The energy spectrum of an electron confined near a current-carrying core is obtained as a function of the azimuthal applied magnetic field within the effective-mass approximation. The double degeneracy of the non-zero electron's axial wave number (k z ) states is lifted by the current-induced magnetic field while that of the non-zero azimuthal quantum number (m) states is preserved. A further analysis is the evaluations of the oscillator strengths for optical transitions involving the lowest-order pair of the electron's energy subbands within the dipole approximation. The radiation field is taken as that of elliptically polarized light incident along the core axis. In this polarization and within the dipole approximation, the allowed transitions are only those governed by the following specific selection rules. The azimuthal quantum numbers of the initial and final states must differ by unity while the electron's axial wave number is conserved. The azimuthal magnetic field is also found to lift the multiple degeneracies of the k z ≠0 interaction integrals as well as those of the oscillator strengths for optical transitions

Silicon radiation detector analysis using back electron beam induced current

International Nuclear Information System (INIS)

Guye, R.

1987-01-01

A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

International Nuclear Information System (INIS)

Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

2015-01-01

Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

Effect of substituents on electronic properties, thin film structure and device performance of dithienothiophene-phenylene cooligomers

International Nuclear Information System (INIS)

Zhang Shiming; Guo Yunlong; Xi Hongxia; Di Chongan; Yu Jian; Zheng Kai; Liu Ruigang; Zhan Xiaowei; Liu Yunqi

2009-01-01

Dithienothiophene-phenylene cooligomers with n-hexyloxy or n-dodecyloxy substituents have been synthesized and compared to the previously reported unsubstituted parent compound. The effect of substituents on the thermal, electronic, optical, thin film structure and field-effect transistor (OFET) properties was investigated. Structural phase transitions from highly-ordered nanocrystalline to liquid crystalline were observed at 241 and 213 deg. C for n-hexyloxy- and n-dodecyloxy-substituted compounds respectively, different from the parent compound. For the alkoxy-substituted compounds, the absorption spectra in thin film blue shift 50 nm, while the fluorescence spectra in thin film red shift 88-100 nm compared to those in solution. The OFET devices based on the alkoxy-substituted compounds exhibit mobilities as high as ca 0.02 cm 2 V -1 s -1 and their performance is sensitive to the alkoxy substituents and substrate temperatures

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Electron Beam Diagnostics in Plasmas Based on Electron Beam Ionization

Science.gov (United States)

Leonhardt, Darrin; Leal-Quiros, Edbertho; Blackwell, David; Walton, Scott; Murphy, Donald; Fernsler, Richard; Meger, Robert

2001-10-01

Over the last few years, electron beam ionization has been shown to be a viable generator of high density plasmas with numerous applications in materials modification. To better understand these plasmas, we have fielded electron beam diagnostics to more clearly understand the propagation of the beam as it travels through the background gas and creates the plasma. These diagnostics vary greatly in sophistication, ranging from differentially pumped systems with energy selective elements to metal 'hockey pucks' covered with thin layers of insulation to electrically isolate the detector from the plasma but pass high energy beam electrons. Most importantly, absolute measurements of spatially resolved beam current densities are measured in a variety of pulsed and continuous beam sources. The energy distribution of the beam current(s) will be further discussed, through experiments incorporating various energy resolving elements such as simple grids and more sophisticated cylindrical lens geometries. The results are compared with other experiments of high energy electron beams through gases and appropriate disparities and caveats will be discussed. Finally, plasma parameters are correlated to the measured beam parameters for a more global picture of electron beam produced plasmas.

Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Sinclair, Robert, E-mail: bobsinc@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, Sang Chul, E-mail: sclee99@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Shi, Yezhou; Chueh, William C. [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States)

2017-05-15

We have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e{sup -}/Å{sup 2}s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower lose rates (ca. 2600 e{sup -}/Å{sup 2}s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce{sup 3+} versus Ce{sup 4+} cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface. - Highlights: • The local structure and chemistry of ceria can be studied by TEM combined with EELS. • At lower electron, there are no observable changes in the ceria thin films. • At higher dose rates, an ordered phase is created due to oxygen vacancy ordering. • In situ HRTEM shows the oxygen vacancy ordering and the movement of surface atoms.

On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Science.gov (United States)

Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

2012-09-01

Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

Investigation of plasma stream collision produced by thin films irradiated by powerful pulsed electron beam

International Nuclear Information System (INIS)

Efremov, V P; Demidov, B A; Ivkin, M V; Mescheryakov, A N; Petrov, V A; Potapenko, A I

2006-01-01

Collision of fast plasma streams in vacuum is investigated. Plasma streams were produced by irradiation of thin foils with a powerful pulsed electron beam. Interaction of the plasma flows was studied by using frame and streak cameras. One-dimensional numerical simulation was carried out. Application of this method for porous ICF targets and high-energy physics is discussed

First-principles-based study of transport properties of Fe thin films on Cu surfaces

Energy Technology Data Exchange (ETDEWEB)

Kishi, Tomoya [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Kasai, Hideaki [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Nakanishi, Hiroshi [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Dino, Wilson Agerico [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Komori, Fumio [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8587 (Japan)

2004-12-08

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties.

First-principles-based study of transport properties of Fe thin films on Cu surfaces

International Nuclear Information System (INIS)

Kishi, Tomoya; Kasai, Hideaki; Nakanishi, Hiroshi; Dino, Wilson Agerico; Komori, Fumio

2004-01-01

We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties

Electronic transport in the heavy fermion superconductors UPd2Al3 and UNi2Al3. Thin film studies

International Nuclear Information System (INIS)

Foerster, Michael

2008-01-01

This work addresses the electronical properties of the superconductors UPd 2 Al 3 and UNi 2 Al 3 on the basis of thin film experiments. Epitaxial thin film samples of UPd 2 Al 3 and UNi 2 Al 3 were prepared using UHV Molecular Beam Epitaxy (MBE). For UPd 2 Al 3 , the change of the growth direction from the intrinsic (001) to epitaxial (100) was predicted and sucessfully demonstrated using LaAlO3 substrates cut in (110) direction. With optimized deposition process parameters for UPd 2 Al 3 (100) on LaAlO 3 (110) superconducting samples with critical temperatures up to T c =1.75 K were obtained. UPd 2 Al 3 -AlO x -Ag mesa junctions with superconducting base electrode were prepared and shown to be in the tunneling regime. However, no signatures of a superconducting density of states were observed in the tunneling spectra. The resistive superconducting transition was probed for a possible dependence on the current direction. In contrast to UNi 2 Al 3 , the existence of such feature was excluded in UPd 2 Al 3 (100) thin films. The second focus of this work is the dependence of the resistive transition in UNi 2 Al 3 (100) thin films on the current direction. The experimental fact that the resistive transition occurs at slightly higher temperatures for I parallel a than for I parallel c can be explained within a model of two weakly coupled superconducting bands. Evidence is presented for the key assumption of the two-band model, namely that transport in and out of the ab-plane is generated on different, weakly coupled parts of the Fermi surface. Main indications are the angle dependence of the superconducting transition and the dependence of the upper critical field B c 2 on current and field orientation. Additionally, several possible alternative explanations for the directional splitting of the transition are excluded in this work. An origin due to scattering on crystal defects or impurities is ruled out, likewise a relation to ohmic heating or vortex dynamics. The

Electron current extraction from a permanent magnet waveguide plasma cathode

Energy Technology Data Exchange (ETDEWEB)

Weatherford, B. R.; Foster, J. E. [University of Michigan, Ann Arbor, Michigan 48109 (United States); Kamhawi, H. [NASA Glenn Research Center, Cleveland, Ohio 44135 (United States)

2011-09-15

An electron cyclotron resonance plasma produced in a cylindrical waveguide with external permanent magnets was investigated as a possible plasma cathode electron source. The configuration is desirable in that it eliminates the need for a physical antenna inserted into the plasma, the erosion of which limits operating lifetime. Plasma bulk density was found to be overdense in the source. Extraction currents over 4 A were achieved with the device. Measurements of extracted electron currents were similar to calculated currents, which were estimated using Langmuir probe measurements at the plasma cathode orifice and along the length of the external plume. The influence of facility effects and trace ionization in the anode-cathode gap are also discussed.

Current drive by electron cyclotron waves in NET

International Nuclear Information System (INIS)

Giruzzi, G.; Schep, T.J.; Westerhof, E.

1989-01-01

A potentially attractive scenario for steady-state operations in the Next European Torus relies on the use of lower-hybrid (LH) waves for non-inductive current drive in the plasma periphery and of electron cyclotron (EC) waves in the aim of determining the best options for the ECN current drive system and of evaluating the expected current drive efficiency. (author). 7 refs.; 6 figs.; 1 tab

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

International Nuclear Information System (INIS)

Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

2011-01-01

Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

The use of electron beam in RIA R and D

International Nuclear Information System (INIS)

Gomes, Itacil C.; Nolen, Jerry; Reed, Claude

2004-01-01

This paper discusses two electron beam applications for the RIA (Rare Isotope Accelerator) R and D. The first is for simulating energy deposition of heavy ions on lithium jets. The peak energy deposition for a 400-kW uranium beam will be 4 MW/cm 3 . Calculations have shown that a 1-MeV electron beam with 40mA of current has a peak energy deposition about 4 MW/cm 3 making it suitable to mimic the thermal response of lithium jet at that uranium beam heat load. The second application of electron beams for RIA R and D, discussed in this paper, is the use of low energy electron beam as a diagnosis tool for on-line monitoring of thickness variations of thin foils or thin jets. Thin foils can be corroded and jets might experience instabilities that can compromise their functionality. Low energy electron beams can be used to detect any change in thickness enabling a continuous on-line monitoring of the thin film being monitored. Calculations have indicated that variations in lithium jet thicknesses at the micron level can easily be detected

Mechanisms of the negative synergy effect between electron cyclotron current drive and lower hybrid current drive in tokamak

International Nuclear Information System (INIS)

Chen Shaoyong; Hong Binbin; Tang Changjian; Yang Wen; Zhang Xinjun

2013-01-01

The synergy current drive by combining electron cyclotron wave (ECW) with lower hybrid wave (LHW) can be used to either increase the noninductive current drive efficiency or shape the plasma current profile. In this paper, the synergy current drive by ECW and LHW is studied with numerical simulation. The nonlinear relationship between the wave powers and the synergy current of ECW and LHW is revealed. When the LHW power is small, the synergy current reduces as the ECW power increases, and the synergy current is even reduced to lower than zero, which is referred as negative synergy in the this context. Research shows that the mechanism of the negative synergy is the peaking effect of LHW power profile and the trapped electrons effect. The present research is helpful for understanding the physics of synergy between electron cyclotron current drive and lower hybrid current drive, it can also instruct the design of experiments. (authors)

Optimized pre-thinning procedures of ion-beam thinning for TEM sample preparation by magnetorheological polishing.

Science.gov (United States)

Luo, Hu; Yin, Shaohui; Zhang, Guanhua; Liu, Chunhui; Tang, Qingchun; Guo, Meijian

2017-10-01

Ion-beam-thinning is a well-established sample preparation technique for transmission electron microscopy (TEM), but tedious procedures and labor consuming pre-thinning could seriously reduce its efficiency. In this work, we present a simple pre-thinning technique by using magnetorheological (MR) polishing to replace manual lapping and dimpling, and demonstrate the successful preparation of electron-transparent single crystal silicon samples after MR polishing and single-sided ion milling. Dimples pre-thinned to less than 30 microns and with little mechanical surface damage were repeatedly produced under optimized MR polishing conditions. Samples pre-thinned by both MR polishing and traditional technique were ion-beam thinned from the rear side until perforation, and then observed by optical microscopy and TEM. The results show that the specimen pre-thinned by MR technique was free from dimpling related defects, which were still residual in sample pre-thinned by conventional technique. Nice high-resolution TEM images could be acquired after MR polishing and one side ion-thinning. MR polishing promises to be an adaptable and efficient method for pre-thinning in preparation of TEM specimens, especially for brittle ceramics. Copyright © 2017 Elsevier B.V. All rights reserved.

The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function

International Nuclear Information System (INIS)

Lahreche, A.; Beggah, Y.; Corkish, R.

2011-01-01

The effect of electron range on electron beam induced current (EBIC) is demonstrated and the problem of the choice of the optimal electron ranges to use with simple uniform and point generation function models is resolved by proposing a method to extract an electron range-energy relationship (ERER). The results show that the use of these extracted electron ranges remove the previous disagreement between the EBIC curves computed with simple forms of generation model and those based on a more realistic generation model. The impact of these extracted electron ranges on the extraction of diffusion length, surface recombination velocity and EBIC contrast of defects is discussed. It is also demonstrated that, for the case of uniform generation, the computed EBIC current is independent of the assumed shape of the generation volume. -- Highlights: → Effect of electron ranges on modeling electron beam induced current is shown. → A method to extract an electron range for simple form of generation is proposed. → For uniform generation the EBIC current is independent of the choice of it shape. → Uses of the extracted electron ranges remove some existing literature ambiguity.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

International Nuclear Information System (INIS)

Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

2009-01-01

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

Energy Technology Data Exchange (ETDEWEB)

Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

2009-11-15

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

Multifractal spectra of scanning electron microscope images of SnO2 thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Chen, Z.W.; Lai, J.K.L.; Shek, C.H.

2005-01-01

The concept of fractal geometry has proved useful in describing structures and processes in experimental systems. In this Letter, the surface topographies of SnO 2 thin films prepared by pulsed laser deposition for various substrate temperatures were measured by scanning electron microscope (SEM). Multifractal spectra f(α) show that the higher the substrate temperature, the wider the spectrum, and the larger the Δf(Δf=f(α min )-f(α max )). It is apparent that the nonuniformity of the height distribution increases with the increasing substrate temperature, and the liquid droplets of SnO 2 thin films are formed on previous thin films. These results show that the SEM images can be characterized by the multifractal spectra

Nb{sub 3}Al thin film deposition for low-noise terahertz electronics

Energy Technology Data Exchange (ETDEWEB)

Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H [Group for Advanced Receiver Development and Onsala Space Observatory, Department of Radio- and Space Science, Chalmers University of Technology, SE 412 96 Gothenburg (Sweden)], E-mail: dimitar.dochev@chalmers.se

2008-02-01

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb{sub 3}Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

International Nuclear Information System (INIS)

Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

2003-01-01

Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Structural characterization of the nickel thin film deposited by glad technique

Directory of Open Access Journals (Sweden)

Potočnik J.

2013-01-01

Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

Fast wave and electron cyclotron current drive in the DIII-D tokamak

International Nuclear Information System (INIS)

Petty, C.C.; Pinsker, R.I.; Austin, M.E.

1995-01-01

The non-inductive current drive from directional fast Alfven and electron cyclotron waves was measured in the DIII-D tokamak in order to demonstrate these forms of radiofrequency (RF) current drive and to compare the measured efficiencies with theoretical expectations. The fast wave frequency was 8 times the deuterium cyclotron frequency at the plasma centre, while the electron cyclotron wave was at twice the electron cyclotron frequency. Complete non-inductive current drive was achieved using a combination of fast wave current drive (FWCD) and electron cyclotron current drive (ECCD) in discharges for which the total plasma current was inductively ramped down from 400 to 170 kA. For steady current discharges, an analysis of the loop voltage revealed up to 195 kA of a non-inductive current (out of 310 kA) during combined electron cyclotron and fast wave injection, with a maximum of 110 kA of FWCD and 80 kA of ECCD achieved (not simultaneously). The peakedness of the current profile increased with RF current drive, indicating that the driven current was centrally localized. The FWCD efficiency increased linearly with the central electron temperature as expected; however, the FWCD was severely degraded in low current discharges owing to incomplete fast wave absorption. The measured FWCD agreed with the predictions of a ray tracing code only when a parasitic loss of 4% per pass was included in the modelling along with multiple pass absorption. Enhancement of the second harmonic ECCD efficiency by the toroidal electric field was observed experimentally. The measured ECCD was in good agreement with Fokker-Planck code predictions. (author). 41 refs, 13 figs, 1 tab

Metal oxide semiconductor thin-film transistors for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

2016-06-15

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

Energy Technology Data Exchange (ETDEWEB)

Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

2016-05-15

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Thermal oxidation of Ni films for p-type thin-film transistors

KAUST Repository

Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

2013-01-01

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

The study of dynamics of electrons in the presence of large current densities

International Nuclear Information System (INIS)

Garcia, G.

2007-11-01

The runaway electron effect is considered in different fields: nuclear fusion, or the heating of the solar corona. In this thesis, we are interested in runaway electrons in the ionosphere. We consider the issue of electrons moving through an ionospheric gas of positive ions and neutrals under the influence of a parallel electric field. We develop a kinetic model of collisions including electrons/electrons, electrons/ions and electrons/neutrals collisions. We use a Fokker-Planck approach to describe binary collisions between charged particles with a long-range interaction. A computational example is given illustrating the approach to equilibrium and the impact of the different terms. Then, a static electric field is applied in a new sample run. In this run, the electrons move in the z direction, parallel to the electric field. The first results show that all the electron distribution functions are non-Maxwellian. Furthermore, runaway electrons can carry a significant part of the total current density up to 20% of the total current density. Nevertheless, we note that the divergence free of the current density is not conserved. We introduce major changes in order to take into account the variation of the different moments of the ion distribution functions. We observe that the electron distribution functions are still non-Maxwellian. Runaway electrons are created and carry the current density. The core distribution stay at rest. As these electrons undergo less collisions, they increase the plasma conductivity. We make a parametric study. We fit the electron distribution function by two Maxwellian. We show that the time to reach the maximal current density is a key point. Thus, when we increase this time, we modify the temperatures. The current density plays a primary role. When the current density increases, all the moments of the distributions increase: electron density and mean velocity of the suprathermal distribution and the electron temperature of the core and

Crystal and electronic structures of pentacene thin films from grazing-incidence x-ray diffraction and first-principles calculations

International Nuclear Information System (INIS)

Nabok, Dmitrii; Puschnig, Peter; Ambrosch-Draxl, Claudia; Werzer, Oliver; Resel, Roland; Smilgies, Detlef-M.

2007-01-01

Combined experimental and theoretical investigations on thin films of pentacene are performed in order to determine the structure of the pentacene thin film phase. Grazing incidence x-ray diffraction is used for studying a pentacene thin film with a nominal thickness of 180 nm. The crystal structure is found to exhibit the lattice parameters a=0.592 nm, b=0.754 nm, c=1.563 nm, α=81.5 deg. , β=87.2 deg. , and γ=89.9 deg. . These crystallographic unit cell dimensions are used as the only input parameters for ab initio total-energy calculations within the framework of density functional theory revealing the molecular packing within the crystal structure. Moreover, we calculate the electronic band structure of the thin film phase and compare it to that of the bulk phase. We find the intermolecular bandwidths of the thin film phase to be significantly larger compared to the bulk structure, e.g., the valence bandwidth is twice as large. This remarkable effect is traced back to an enhanced intermolecular π-π overlap due to the upright standing molecules in the thin film phase

Run-away electrons and plasma pinching in a high-current diode

International Nuclear Information System (INIS)

Ivanenkov, G.V.

1984-01-01

The electrons run-away process in space-confined plasma with current is considered. It has been found that the effect of the proper magnetic field of a current leads to appearance, in add tion to the Dreicer mechanism, of other run-away mechanism in the process of radial oscillations of electrons accelerating near the axis. The appearance of run-away electrons from a thermal velocities region occurs in the course of collisions as well as radial drift. The thresholds of Dreicer run-away and drift are determined. The conditions of formation of Z-pinch current envelope and its collisionless compression by the ''snow plough'' type for the 10-100 ns of high-current accelerator pulse duration are elucidated

Structure and electronic properties of ordered binay thin-film compounds of rare earths with transition metals

International Nuclear Information System (INIS)

Schneider, W.

2004-01-01

The present thesis deals with preparation of structurally ordered thin-film compounds of the rare-earths Ce and Dy with the transition metals Pd, Rh, and Ni as well as with investigations of their crystalline and electronic structures. Typically 10 nm-thick films were grown in-situ by deposition of the rare-earth metals onto single crystalline transitionmetal substrates or alternatively by codeposition of both constituents onto a W(110) single crystal. In both cases deposition was followed by short-term annealing at temperatures of 400-1000 C to achieve crystalline order. The latter was analyzed by means of low-energy electron-diffraction (LEED) and evaluated on the basis of a simple kinematic theory. The electronic structure was investigated by means of angle-resolved photoemission (ARPES), partially exploiting synchrotron radiation from BESSY. The studies concentrate mainly on the behavior of the valence bands as a function of structure and composition of the thin films, particularly under consideration of surface phenomena. Measured energy dispersions were compared with results of LDA-LCAO calculations performed in the framework of this thesis. Observed shifts of the energy bands by up to 1 eV are attributed in the light of a simple model to incomplete screening of the photoemission final states. (orig.)

Development techniques and electron optical studies of high voltage, high current electron guns

International Nuclear Information System (INIS)

Rangarajan, L.M.; Mahadevan, S.; Ramamurthi, S.S.

1992-01-01

The progress of the electron gun design, limiting to axially symmetric geometries is discussed here with a view to utilise such guns for electron accelerators. The mechanical design features leading to the physical configuration of the gun with stringent tolerances are outlined. Vacuum processing is done at pressures of 1.3x10 -5 Pa. The gun employs W-filament emitter or a cathode pellet with bombarder service. A water cooled compact faraday cup is used to measure the electron current. Electron gun geometries have been studied using the computer programme. The preveance of the gun is 0.7x10 -7 A/Vsup(1.5) at 80 kV. Developmental techniques of such pulsed electron guns are described. (author). 7 refs., 5 figs

Use of thin films obtained by electron beam evaporation as optical wave guide

International Nuclear Information System (INIS)

Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

1986-01-01

Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

International Nuclear Information System (INIS)

Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

1991-04-01

The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

High current table-top setup for femtosecond gas electron diffraction

Directory of Open Access Journals (Sweden)

Omid Zandi

2017-07-01

Full Text Available We have constructed an experimental setup for gas phase electron diffraction with femtosecond resolution and a high average beam current. While gas electron diffraction has been successful at determining molecular structures, it has been a challenge to reach femtosecond resolution while maintaining sufficient beam current to retrieve structures with high spatial resolution. The main challenges are the Coulomb force that leads to broadening of the electron pulses and the temporal blurring that results from the velocity mismatch between the laser and electron pulses as they traverse the sample. We present here a device that uses pulse compression to overcome the Coulomb broadening and deliver femtosecond electron pulses on a gas target. The velocity mismatch can be compensated using laser pulses with a tilted intensity front to excite the sample. The temporal resolution of the setup was determined with a streak camera to be better than 400 fs for pulses with up to half a million electrons and a kinetic energy of 90 keV. The high charge per pulse, combined with a repetition rate of 5 kHz, results in an average beam current that is between one and two orders of magnitude higher than previously demonstrated.

Electronic Current Transducer (ECT) for high voltage dc lines

Science.gov (United States)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

Electron cyclotron current drive experiments on DIII-D

International Nuclear Information System (INIS)

James, R.A.; Giruzzi, G.; Gentile, B. de; Rodriguez, L.; Fyaretdinov, A.; Gorelov, Yu.; Trukhin, V.; Harvey, R.; Lohr, J.; Luce, T.C.; Matsuda, K.; Politzer, P.; Prater, R.; Snider, R.; Janz, S.

1990-05-01

Electron Cyclotron Current Drive (ECCD) experiments on the DIII-D tokamak have been performed using 60 GHz waves launched from the high field side of the torus. Preliminary analysis indicates rf driven currents between 50 and 100 kA in discharges with total plasma currents between 200 and 500 kA. These are the first ECCD experiments with strong first pass absorption, localized deposition of the rf power, and τ E much longer than the slowing-down time of the rf generated current carriers. The experimentally measured profiles for T e , η e and Z eff are used as input for a 1D transport code and a multiply-ray, 3D ray tracing code. Comparisons with theory and assessment of the influence of the residual electric field, using a Fokker-Planck code, are in progress. The ECH power levels were between 1 and 1.5 MW with pulse lengths of about 500 msec. ECCD experiments worldwide are motivated by issues relating to the physics and technical advantages of the use of high frequency rf waves to drive localized currents. ECCD is accomplished by preferentially heating electrons moving in one toroidal direction, reducing their collisionality and thereby producing a non-inductively driven toroidal current. 6 refs., 4 figs

Electron cyclotron current drive experiments on DIII-D

Energy Technology Data Exchange (ETDEWEB)

James, R.A. (Lawrence Livermore National Lab., CA (USA)); Giruzzi, G.; Gentile, B. de; Rodriguez, L. (Association Euratom-CEA, Centre d' Etudes Nucleaires de Cadarache, 13 - Saint-Paul-les-Durance (France)); Fyaretdinov, A.; Gorelov, Yu.; Trukhin, V. (Kurchatov Inst. of Atomic Energy, Moscow (USSR)); Harvey, R.; Lohr, J.; Luce, T.C.; Matsuda, K.; Politzer, P.; Prater, R.; Snider, R. (General Atomics, San Di

1990-05-01

Electron Cyclotron Current Drive (ECCD) experiments on the DIII-D tokamak have been performed using 60 GHz waves launched from the high field side of the torus. Preliminary analysis indicates rf driven currents between 50 and 100 kA in discharges with total plasma currents between 200 and 500 kA. These are the first ECCD experiments with strong first pass absorption, localized deposition of the rf power, and {tau}{sub E} much longer than the slowing-down time of the rf generated current carriers. The experimentally measured profiles for T{sub e}, {eta}{sub e} and Z{sub eff} are used as input for a 1D transport code and a multiply-ray, 3D ray tracing code. Comparisons with theory and assessment of the influence of the residual electric field, using a Fokker-Planck code, are in progress. The ECH power levels were between 1 and 1.5 MW with pulse lengths of about 500 msec. ECCD experiments worldwide are motivated by issues relating to the physics and technical advantages of the use of high frequency rf waves to drive localized currents. ECCD is accomplished by preferentially heating electrons moving in one toroidal direction, reducing their collisionality and thereby producing a non-inductively driven toroidal current. 6 refs., 4 figs.

Current status of thin seam longwall mining in the US

Energy Technology Data Exchange (ETDEWEB)

Peng, S.S. [West Virginia Univ., Morgantown, WV (United States); Orndorff, A.

1996-12-31

Thin seams in this paper refers to those seams the economic mining height of which is below 50-55 in. that are traditionally considered to be the proprietary of plowing and present a whole net set of problems for longwall mining. In thin seams it is difficult to design and manufacture an efficient high capacity cutting machine for maintenance and production operations. Thin seam mining by longwall plowing began in the late fifties in southern West Virginia, and continues to the present time. In the seventies when longwall mining began to take off a large percentage of U.S. longwalls were operating in the thin seams. Tables 1 and 2 show the historical trends of cutting machines used for seams less than 55 in and 50 in, respectively. In addition to the plow system, the single-ended fixed drum and single-ended ranging drum shearers were introduced in the mid and late seventies and operated continuously until 2-4 years ago. The double-ended ranging drum shearers have also been employed for thin seam longwall mining during this period including several in-web (or off-pan) shearers between late seventies and early eighties. In this paper three thin-seam longwalls in three states employing the latest thin-seam longwall technology will be reviewed. However only two of them are still in operation while the third one ceased operation recently.

The detection of electron-beam-induced current in junctionless semiconductor

International Nuclear Information System (INIS)

Tan, Chee Chin; Ong, Vincent K. S.

2010-01-01

The scanning electron microscope is a versatile tool and its electron beam techniques have been widely used in semiconductor material and device characterizations. One of these electron beam techniques is the electron-beam-induced current (EBIC) technique. One of the limitations of the conventional EBIC technique is that it requires charge collecting junctions which may not be readily available in junctionless samples such as bare substrates unless some special sample preparation procedure such as the fabrication of a diffused junction is done on the junctionless sample. In this paper, the technique of detecting EBIC current in junctionless samples with the use of a two-point probe is presented. It is found that the EBIC current is independent from its physical parameter when the sample thickness is greater than 4L; the width to the right of probe 2 and the width to the left of probe 1 are greater than 2L and 8L, respectively. The parameters affecting this technique of detecting the EBIC current such as the depth of the generation volume, probe spacing, and the applied bias are also discussed in this paper. A commercially available two-dimensional device simulator was used to verify this technique.

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

International Nuclear Information System (INIS)

Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

2017-01-01

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

Energy Technology Data Exchange (ETDEWEB)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L. [CEA, DAM, DIF, F-91297 Arpajon (France); Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P. [ISAE, Universite de Toulouse, 10 avenue Edouard Belin, BP 54032, 31055 Toulouse Cedex 4 (France); Girard, S.; Ouerdane, Y.; Boukenter, A. [Universite de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000, Saint-Etienne (France)

2015-07-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

International Nuclear Information System (INIS)

Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

2015-01-01

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

PHYSICS OF ELECTRON CYCLOTRON CURRENT DRIVE ON DIII-D

International Nuclear Information System (INIS)

PETTY, C.C.; PRATER, R.; LUCE, T.C.; ELLIS, R.A.; HARVEY, R.W.; KINSEY, J.E.; LAO, L.L.; LOHR, J.; MAKOWSKI, M.A.

2002-01-01

OAK A271 PHYSICS OF ELECTRON CYCLOTRON CURRENT DRIVE ON DIII-D. Recent experiments on the DIII-D tokamak have focused on determining the effect of trapped particles on the electron cyclotron current drive (ECCD) efficiency. The measured ECCD efficiency increases as the deposition location is moved towards the inboard midplane or towards smaller minor radius for both co and counter injection. The measured ECCD efficiency also increases with increasing electron density and/or temperature. The experimental ECCD is compared to both the linear theory (Toray-GA) as well as a quasilinear Fokker-Planck model (CQL3D). The experimental ECCD is found to be in better agreement with the more complete Fokker-Planck calculation, especially for cases of high rf power density and/or loop voltage

Electron-cyclotron current drive in the tokamak physics experiment

International Nuclear Information System (INIS)

Smith, G.R.; Kritz, A.H.; Radin, S.H.

1992-01-01

Ray-tracking calculations provide estimates of the electron-cyclotron heating (ECH) power required to suppress tearing modes near the q=2 surface in the Tokamak Physics Experiment. Effects of finite beam width and divergence are included, as are the effects of scattering of the ECH power by drift-wave turbulence. A frequency of about 120 GHz allows current drive on the small-R (high-B) portion of q=2, while 80 GHz drives current on the large-R (low-B) portion. The higher frequency has the advantages of less sensitivity to wave and plasma parameters and of no trapped-electron degradation of current-drive efficiency. Less than 1 MW suffices to suppress tearing modes even with high turbulence levels

Fusion welding of thin metal foils

International Nuclear Information System (INIS)

Casey, H.

1975-01-01

Aspects of fusion welding of thin metal foils are reviewed and the current techniques employed at LASL to join foils are described. Techniques for fusion welding approximately 0.025-mm-thick foils of copper, aluminum, and stainless steels have been developed using both electron beam and laser welding equipment. These techniques, together with the related aspects of joint design, tooling and fixturing, joint preparation, and modifications to the commercially available welding equipment, are included in the review. (auth)

Spin current in an electron waveguide tunnel-coupled to a topological insulator

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A

2012-01-01

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

Numerical analysis on the synergy between electron cyclotron current drive and lower hybrid current drive in tokamak plasmas

International Nuclear Information System (INIS)

Chen, S Y; Hong, B B; Liu, Y; Lu, W; Huang, J; Tang, C J; Ding, X T; Zhang, X J; Hu, Y J

2012-01-01

The synergy between electron cyclotron current drive (ECCD) and lower hybrid current drive (LHCD) is investigated numerically with the parameters of the HL-2A tokamak. Based on the understanding of the synergy mechanisms, a high current driven efficiency or a desired radial current profile can be achieved through properly matching the parameters of ECCD and LHCD due to the flexibility of ECCD. Meanwhile, it is found that the total current driven by the electron cyclotron wave (ECW) and the lower hybrid wave (LHW) simultaneously can be smaller than the sum of the currents driven by the ECW and LHW separately, when the power of the ECW is much larger than the LHW power. One of the reasons leading to this phenomenon (referred to as negative synergy in this context) is that fast current-carrying electrons tend to be trapped, when the perpendicular velocity driven by the ECW is large and the parallel velocity decided by the LHW is correspondingly small. (paper)

Current-limiting mechanisms in YBa2Cu3O7-δ thin layers and quasi-multilayers

International Nuclear Information System (INIS)

Haenisch, J.

2004-01-01

In this work, electrical transport properties and the maximum current carrying capability of YBa 2 Cu 3 O 7 -[δ] thin films and so called quasi-multilayers are investigated. These samples are prepared with pulsed laser deposition on single-crystalline substrates (SrTiO 3 ) as well as on biaxially textured Ni tapes. The critical current density of coated conductors is limited by small-angle grain boundaries in low magnetic fields, but by the intra-grain pinning properties in higher magnetic fields. Accordingly, these investigations are divided into two parts: In the first part, the limitation of the critical current density by grain-boundaries and grain boundary networks is investigated with the main focus on the influence of geometrical factors such as the conductor width or the grain aspect ratio. In the second part, a possible enhancement of the critical current density due to different doping types (atomar doping using Zn and precipitate doping using BaMO 3 where M is a transition metal) will be discussed. Here, not only the irreversibility field but also the pinning behaviour in very low magnetic fields is of interest to better understand the pinning mechanism of thin films. (Orig.)

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Electron currents in field reversed mirror dynamics: Theory and hybrid simulation

International Nuclear Information System (INIS)

Stark, R.A.

1987-01-01

To model the dynamics of the Field-Reversed Mirror (FRM) as a whole we have developed a 1-D radical hybrid code which also incorporates the above electron null current model. This code, named FROST, models the plasma as azimuthally symmetric with no axial dependence. A multi-group method in energy and canonical angular momentum describes the large-orbit ions from the beam. Massless fluid equations describe electrons and low energy ions. Since a fluid treatment for electrons is invalid near a field null, the null region electron current model discussed above has been included for this region, a unique feature. Results of simulation of neutral beam start-up in a 2XIIB-like plasma is discussed. There FROST predicts that electron currents will retard, but not prevent reversal of the magnetic field at the plasma center. These results are optimistic when compared to actual reversal experiments in 2XIIB, because there finite axial length effects and micro-instabilities substantially deteriorated the ion confinement. Nevertheless, because of the importance of the electron current in a low field region in the FRM, FROST represents a valuable intermediate step toward a more complete description of FRM dynamics. 54 refs., 50 figs., 3 tabs

Study of microstructural evolution in friction-stir welded thin-sheet Al-Cu-Li alloy using transmission-electron microscopy

International Nuclear Information System (INIS)

Shukla, A.K.; Baeslack, W.A.

2007-01-01

Microstructure evolution in friction-stir welded thin-sheet Al-Cu-Li alloy was studied using transmission-electron microscopy (TEM) and the dissolution and coarsening of T 1 and θ' precipitates were related to the microhardness profile of the weld

Automated thin-film analyses of hydrated interplanetary dust particles in the analytical electron microscope

Science.gov (United States)

Germani, M. S.; Bradley, J. P.; Brownlee, D. E.

1990-01-01

A 200 keV electron microscope was used to obtain elemental analyses from over 4000 points on thin sections of eight 'layer silicate' class interplanetary dust particles (IDPs). Major and minor element abundances from a volume approaching that of a cylinder 50 nm in diameter were observed. Mineral phases and their relative abundances in the thin sections were identified and petrographic characteristics were determined. Three of the particles contained smectite (1.0-1.2 nm basal spacing) and two contained serpentine (0.7 nm basal spacing). The point count analyses and Mg-Si-Fe ternary diagrams show that one of the serpentine-containing IDPs is similar to CI and CM chondritic meteorites. The IDPs exhibit evidence of aqueous processing, but they have typically experienced only short range, submicrometer scale alteration. The IDPs may provide a broad sampling of the asteroid belt.

Resistance and sheet resistance measurements using electron beam induced current

International Nuclear Information System (INIS)

Czerwinski, A.; Pluska, M.; Ratajczak, J.; Szerling, A.; KaPtcki, J.

2006-01-01

A method for measurement of spatially uniform or nonuniform resistance in layers and strips, based on electron beam induced current (EBIC) technique, is described. High electron beam currents are used so that the overall resistance of the measurement circuit affects the EBIC signal. During the evaluation, the electron beam is scanned along the measured object, whose load resistance varies with the distance. The variation is compensated by an adjustable resistance within an external circuit. The method has been experimentally deployed for sheet resistance determination of buried regions of lateral confinements in semiconductor laser heterostructures manufactured by molecular beam epitaxy

Photo-neutron yields from thin and thick targets irradiated by 2.0 GeV electrons

International Nuclear Information System (INIS)

Hee-Seock, Lee; Syuichi, Ban; Toshiya, Sanami; Kazutoshi, Takahashi; Tatsuhiko, Sato; Kazuo, Shin

2005-01-01

The photo-neutron yields from thin and thick targets irradiated by high energy electrons were studied. The photo-neutron spectra at 90 deg C relative to the incident 2.0 GeV electrons were measured by the pulsed beam time-of-flight technique using the Pilot-U plastic scintillator and the NE213 liquid scintillator with 2 inches in length and 2 inches in diameter. Targets, from low-Z element (carbon) to high-Z element (bismuth) and with thin (0.5 Xo) and thick (10 Xo) thickness, were used in this study. The differential photo-neutron yields between 2 MeV (mainly 8 MeV) and 400 MeV were obtained. The systematics was studied to make empirical yield terms for shielding application. Recently, the study of the angular distributed yields was conducted at two other observing angles, 48 deg C and 140 deg C. The photo-neutron yields between 8 MeV and 250 MeV were obtained for thick targets. The experimental data were compared with results calculated using the EGS4+PICA3 or the MCNPX 2.5d code. (authors)

A study of different types of current mirrors using polysilicon TFTs

International Nuclear Information System (INIS)

Pappas, I; Nalpantidis, L; Kalenteridis, V; Siskos, S; Dimitriadis, C A; Hatzopoulos, A A

2005-01-01

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications

Electron-Beam Produced Air Plasma: Optical Measurement of Beam Current

Science.gov (United States)

Vidmar, Robert; Stalder, Kenneth; Seeley, Megan

2006-10-01

Experiments to quantify the electron beam current and distribution of beam current in air plasma are discussed. The air plasma is produced by a 100-keV 10-mA electron beam source that traverses a transmission window into a chamber with air as a target gas. Air pressure is between 1 mTorr and 760 Torr. Strong optical emissions due to electron impact ionization are observed for the N2 2^nd positive line at 337.1 nm and the N2^+ 1^st negative line at 391.4 nm. Calibration of optical emissions using signals from the isolated transmission window and a Faraday plate are discussed. The calibrated optical system is then used to quantify the electron distribution in the air plasma.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

KAUST Repository

Lin, Yen-Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn; Anthopoulos, Thomas D.

2015-01-01

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

KAUST Repository

Lin, Yen-Hung

2015-05-26

High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

Introduction to thin film transistors physics and technology of TFTs

CERN Document Server

Brotherton, S D

2013-01-01

Introduction to Thin Film Transistors reviews the operation, application, and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these mat...

Electron beam formation in high-current diode

International Nuclear Information System (INIS)

Korneev, S.A.

1981-01-01

The results of experimental investigation of the electron beam formation in diode with cathode on the base of incomplete discharge over the surface of dielectrics with dielectric penetration epsilon 2 . The measurement of current density distribution over transversal cross section reveals an efficient homogeneity [ru

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

2011-09-15

Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

Separating Bulk and Surface Contributions to Electronic Excited-State Processes in Hybrid Mixed Perovskite Thin Films via Multimodal All-Optical Imaging.

Science.gov (United States)

Simpson, Mary Jane; Doughty, Benjamin; Das, Sanjib; Xiao, Kai; Ma, Ying-Zhong

2017-07-20

A comprehensive understanding of electronic excited-state phenomena underlying the impressive performance of solution-processed hybrid halide perovskite solar cells requires access to both spatially resolved electronic processes and corresponding sample morphological characteristics. Here, we demonstrate an all-optical multimodal imaging approach that enables us to obtain both electronic excited-state and morphological information on a single optical microscope platform with simultaneous high temporal and spatial resolution. Specifically, images were acquired for the same region of interest in thin films of chloride containing mixed lead halide perovskites (CH 3 NH 3 PbI 3-x Cl x ) using femtosecond transient absorption, time-integrated photoluminescence, confocal reflectance, and transmission microscopies. Comprehensive image analysis revealed the presence of surface- and bulk-dominated contributions to the various images, which describe either spatially dependent electronic excited-state properties or morphological variations across the probed region of the thin films. These results show that PL probes effectively the species near or at the film surface.

Electronic response of a photodiode coupled to a boron thin film

Energy Technology Data Exchange (ETDEWEB)

Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

2017-07-01

A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

Dynamical nuclear spin polarization induced by electronic current through double quantum dots

International Nuclear Information System (INIS)

Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus

2011-01-01

We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.

Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

Directory of Open Access Journals (Sweden)

Deepu Thomas

2014-01-01

Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

Computer simulations analysis for determining the polarity of charge generated by high energy electron irradiation of a thin film

DEFF Research Database (Denmark)

Malac, Marek; Hettler, Simon; Hayashida, Misa

2017-01-01

Detailed simulations are necessary to correctly interpret the charge polarity of electron beam irradiated thin film patch. Relying on systematic simulations we provide guidelines and movies to interpret experimentally the polarity of the charged area, to be understood as the sign of the electrost......Detailed simulations are necessary to correctly interpret the charge polarity of electron beam irradiated thin film patch. Relying on systematic simulations we provide guidelines and movies to interpret experimentally the polarity of the charged area, to be understood as the sign...... of the electrostatic potential developed under the beam with reference to a ground electrode. We discuss the two methods most frequently used to assess charge polarity: Fresnel imaging of the irradiated area and Thon rings analysis. We also briefly discuss parameter optimization for hole free phase plate (HFPP...

Electron Energy Confinement for HHFW Heating and Current Drive Phasing on NSTX

International Nuclear Information System (INIS)

Hosea, J.C.; Bernabei, S.; Biewer, T.; LeBlanc, B.; Phillips, C.K.; Wilson, J.R.; Stutman, D.; Ryan, P.; Swain, D.W.

2005-01-01

Thomson scattering laser pulses are synchronized relative to modulated HHFW power to permit evaluation of the electron energy confinement time during and following HHFW pulses for both heating and current drive antenna phasing. Profile changes resulting from instabilities require that the total electron stored energy, evaluated by integrating the midplane electron pressure P(sub)e(R) over the magnetic surfaces prescribed by EFIT analysis, be used to derive the electron energy confinement time. Core confinement is reduced during a sawtooth instability but, although the electron energy is distributed outward by the sawtooth, the bulk electron energy confinement time is essentially unaffected. The radial deposition of energy into the electrons is noticeably more peaked for current drive phasing (longer wavelength excitation) relative to that for heating phasing (shorter wavelength excitation) as is expected theoretically. However, the power delivered to the core plasma is reduced consider ably for the current drive phasing, indicating that surface/peripheral damping processes play a more important role for this case

Impedance of thin film cathodes: thickness and current collector dependence

NARCIS (Netherlands)

Boukamp, Bernard A.; Hildenbrand, N.; Bouwmeester, Henricus J.M.; Blank, David H.A.

2015-01-01

The influence of the layer thickness of mixed ionic–electronic conducting (MIEC) cathodes and the type of noble metal current collector on the apparent surface exchange resistance is studied with impedance spectroscopy. The impedance data is analyzed with the ‘General Finite Length Diffusion’

Impact of electron trapping on RF current drive in tokamaks

International Nuclear Information System (INIS)

Giruzzi, G.; Engelmann, F.

1987-01-01

The impact of the presence of trapped electrons on noninductive current drive by RF waves in tokamak plasmas is investigated. The appropriate response function, allowing to express the current drive efficiency J/P by a simple analytical formula, has been derived. The approach displays the reasons for the degradation of the current drive efficiency away from the plasma axis in the case of methods relying on the diffusion of electrons in the velocity component perpendicular to the confining magnetic field. It is shown that this degradation is appreciable even for large resonant parallel velocities. (author) [pt

ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

Science.gov (United States)

Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

Oblique electron cyclotron emission for electron distribution studies (invited)

International Nuclear Information System (INIS)

Preische, S.; Efthimion, P.C.; Kaye, S.M.

1997-01-01

Electron cyclotron emission (ECE) at an oblique angle to the magnetic field provides a means of probing the electron distribution function both in energy and physical space through changes in and constraints on the relativistic electron cyclotron resonance condition. Diagnostics based on this Doppler shifted resonance are able to study a variety of electron distributions through changes in the location of the resonance in physical or energy space accomplished by changes in the viewing angle and frequency, and the magnetic field. For the case of observation across a changing magnetic field, such as across the tokamak midplane, the constraint on the resonance condition for real solutions to the dispersion relation can constrain the physical location of optically thin emission. A new Oblique ECE diagnostic was installed and operated on the PBX-M tokamak for the study of energetic electrons during lower hybrid current drive. It has a view 33 degree with respect to perpendicular in the tokamak midplane, receives second harmonic X-mode emission, and is constrained to receive single pass emission by SiC viewing dumps on the tokamak walls. Spatial localization of optically thin emission from superthermal electrons (50 endash 100 keV) was obtained by observation of emission upshifted from a thermal cyclotron harmonic. The localized measurements of the electron energy distribution and the superthermal density profile made by this diagnostic demonstrate its potential to study the spatial transport of energetic electrons on fast magnetohydrodynamic time scales or anomalous diffusion time scales. Oblique ECE can also be used to study electron distributions that may have a slight deviation from a Maxwellian by localizing the emission in energy space. (Abstract Truncated)

Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

Science.gov (United States)

Abazari, M.; Safari, A.

2009-05-01

We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

Effects of small magnetic fields on the critical current of thin films

International Nuclear Information System (INIS)

Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

2002-01-01

Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

Electron Currents and Heating in the Ion Diffusion Region of Asymmetric Reconnection

Science.gov (United States)

Graham, D. B.; Khotyaintsev, Yu. V.; Norgren, C.; Vaivads, A.; Andre, M.; Lindqvist, P. A.; Marklund, G. T.; Ergun, R. E.; Paterson, W. R.; Gershman, D. J.;

Electron microscope observation of single - crystalline beryllium thin foils

International Nuclear Information System (INIS)

Antolin, J.; Poirier, J.P.; Dupouy, J.M.

1965-01-01

Thin foils prepared from single crystalline beryllium simples deformed at room temperature, have been observed by transmission electron microscopy. The various deformation modes have been investigated separately, from their early stages and their characteristic dislocation configurations have been observed. Basal slip is characterized at is outset by the presence of numerous dipoles and elongated prismatic loops. More pronounced cold work leads to the formation of dislocation tangles and bundles which eventually give a cellular structure. Prismatic slip begins by the cross-slip of dislocations from the basal plane into the prismatic plane. A cellular structure is equally observed in heavily deformed samples. Sessile dislocations have been observed in twin boundaries; they are produced by reactions between slip dislocations and twin dislocations. Finally, the study of samples quenched from 1100 deg. C and annealed at 200 deg. C has shown that the observed loops lie in prismatic planes and have a Burgers vector b 1/3 . (authors) [fr

Electrons in a two-dimensions world

International Nuclear Information System (INIS)

Kivelson, S.; Lee, D.H.; Zhang, S.C.

1996-01-01

This digest paper is a presentation of the recent discoveries about the quantum Hall effect and its links with superconductivity. This effect can occur when electrons are confined inside a thin film between two semiconductor crystals and when they are cooled to a temperature close to 0 deg. K and submitted to an intense magnetic field. Electrons can propagate along the thin film plane when the magnetic field is perpendicular to this plane. When the magnetic field strength increases, a difference of potential occurs (the Hall voltage) and increases by steps inside the thin film and perpendicularly to the current. Each step is characterized by a perfect conductivity of the electrons and by a particular value of the Hall conductance. These steps correspond to fractional multiples of the quantum conductance. The paper describes first the historical aspects that led to the discovery of the quantum Hall effect. Then, this effect is explained using a model in which electrons are assimilated to composed bosons carrying a odd number of magnetic field quanta. This model is used to describe the similarities between the quantum Hall effect and the superconductivity and to draw a phase diagram of the different behaviours of electrons in a plan according to the strength of the magnetic field and to the degree of disorder inside the semiconductor crystals. This diagram show some unexpected properties of electrons which can act like a dielectric material or like a metal. (J.S.). 4 refs., 6 figs., 1 tab

Simplified expression for the minimum hotspot current in long, thin-film superconductors

International Nuclear Information System (INIS)

Dharmadurai, G.; Murthy, N.S.S.

1979-01-01

A generalization of the Skocpol--Beasley--Tinkham hotspot theory to include an approximate temperature dependence of the conductive heat transfer term of the heat flow equations clearly indicates that the role of the thermal conductivity of the material of the film is not reflected in the observed temperature dependence of the minimum current I/sub h/ required to sustain a hotspot in a long, thin-film superconductor. This observation leads to the derivation of a simplified expression for I/sub h/ valid for a wider range of bath temperatures

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

Science.gov (United States)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

A self-powered thin-film radiation detector using intrinsic high-energy current

Energy Technology Data Exchange (ETDEWEB)

Zygmanski, Piotr, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, Massachusetts 02115 (United States); Sajo, Erno, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Physics and Applied Physics, Medical Physics Program, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States)

2016-01-15

Purpose: The authors introduce a radiation detection method that relies on high-energy current (HEC) formed by secondary charged particles in the detector material, which induces conduction current in an external readout circuit. Direct energy conversion of the incident radiation powers the signal formation without the need for external bias voltage or amplification. The detector the authors consider is a thin-film multilayer device, composed of alternating disparate electrically conductive and insulating layers. The optimal design of HEC detectors consists of microscopic or nanoscopic structures. Methods: Theoretical and computational developments are presented to illustrate the salient properties of the HEC detector and to demonstrate its feasibility. In this work, the authors examine single-sandwiched and periodic layers of Cu and Al, and Au and Al, ranging in thickness from 100 nm to 300 μm and separated by similarly sized dielectric gaps, exposed to 120 kVp x-ray beam (half-value thickness of 4.1 mm of Al). The energy deposition characteristics and the high-energy current were determined using radiation transport computations. Results: The authors found that in a dual-layer configuration, the signal is in the measurable range. For a defined total detector thickness in a multilayer structure, the signal sharply increases with decreasing thickness of the high-Z conductive layers. This paper focuses on the computational results while a companion paper reports the experimental findings. Conclusions: Significant advantages of the device are that it does not require external power supply and amplification to create a measurable signal; it can be made in any size and geometry, including very thin (sub-millimeter to submicron) flexible curvilinear forms, and it is inexpensive. Potential applications include medical dosimetry (both in vivo and external), radiation protection, and other settings where one or more of the above qualities are desired.

Transdusers for measuring currents and coordinates of subnanosecond accelerated electron beams

International Nuclear Information System (INIS)

Mocheshnikov, N.I.; Reprintsev, L.V.; Syumak, V.N.; Fedotov, I.F.

1979-01-01

Two types of monitors using eddy currents induced in the walls of an electronic channel by electron clusters have been developed. Monitors of the first type use, instead of the resistor belt, the input resistance of a wide-band transformer whose low-resistance input is connected to the break in the electron channel and the high-resistance output - to the output cable. The monitor is used in an electron storage ring. To increase the fast response of second-type monitors the brake in the electron channel is loaded with a low-resistance strip line. The signal from this line is taken near the place of its connection to the brake. The monitors are supposed to be used for resolution of the fine structure of a high-current electron linear accelerator beam. The achieved rise time constituted 0.15 - 0.2 ns

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

Science.gov (United States)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Study of the fast electron distribution function in lower hybrid and electron cyclotron current driven plasmas in the WT-3 tokamak

International Nuclear Information System (INIS)

Ogura, K.; Tanaka, H.; Ide, S.

1991-01-01

The distribution function f(p-vector) of fast electrons produced by lower hybrid current drive (LHCD) is investigated in the WT-3 tokamak, using a combination of measurements of the hard X-ray (HXR) angular distribution with respect to the toroidal magnetic field and observations of the HXR radial profile. The data obtained indicate the formation of a plateau-like region in f(p-vector) which corresponds to a region of resonant interaction between the lower hybrid (LH) wave and the electrons. The energy of the fast electrons in the peripheral plasma region is observed to be higher than that in the central plasma region under operational conditions with a high plasma current (I p ≥ 80 kA). At low current (I p < or approx. 50 kA), however, the energy of fast electrons is constant along the plasma radius. In the current ramp-up phase, fast electrons are generated in the directions normal to and opposite to the LH wave propagation. The latter case is ascribed to a negatively biased toroidal electric field induced by the current ramp-up. To study the characteristic change of f(p-vector) for various current drive mechanisms, HXR measurements are performed in electron cyclotron current driven (ECCD) plasma and in Ohmic heating (OH) plasma. In ECCD plasma, the perpendicular energy of fast electrons increases, which indicates that fast electrons are accelerated perpendicularly by electron cyclotron heating. In both LHCD and ECCD plasmas, fast electrons flow in the direction opposite to the wave propagation, while no such fast electrons are formed in OH plasma. (author). 33 refs, 16 figs, 1 tab