WorldWideScience

Sample records for thin dielectric sheet

  1. FDTD modeling of thin impedance sheets

    Science.gov (United States)

    Luebbers, Raymond J.; Kunz, Karl S.

    1991-01-01

    Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

  2. Geometry of thin liquid sheet flows

    Science.gov (United States)

    Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

    1994-01-01

    Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

  3. Weld Repair of Thin Aluminum Sheet

    Science.gov (United States)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  4. Buckling and stretching of thin viscous sheets

    Science.gov (United States)

    O'Kiely, Doireann; Breward, Chris; Griffiths, Ian; Howell, Peter; Lange, Ulrich

    2016-11-01

    Thin glass sheets are used in smartphone, battery and semiconductor technology, and may be manufactured by producing a relatively thick glass slab and subsequently redrawing it to a required thickness. The resulting sheets commonly possess undesired centerline ripples and thick edges. We present a mathematical model in which a viscous sheet undergoes redraw in the direction of gravity, and show that, in a sufficiently strong gravitational field, buckling is driven by compression in a region near the bottom of the sheet, and limited by viscous resistance to stretching of the sheet. We use asymptotic analysis in the thin-sheet, low-Reynolds-number limit to determine the centerline profile and growth rate of such a viscous sheet.

  5. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  6. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  7. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  8. Thin sheet numerical modelling of continental collision

    NARCIS (Netherlands)

    Jimenez-Munt, I.; Garcia-Gastellanos, D.; Fernandez, M.

    2005-01-01

    We study the effects of incorporating surface mass transport and the gravitational potential energy of both crust and lithospheric mantle to the viscous thin sheet approach. Recent 2D (cross-section) numerical models show that surface erosion and sediment transport can play a major role in shaping

  9. Rapidly cast crystalline thin sheet materials

    International Nuclear Information System (INIS)

    Warlimont, H.; Emmerich, K.

    1986-01-01

    The current state and progress of casting thin sheet and ribbons directly from the melt are reviewed. First, the solidification phenomena pertinent to the process are outlined. Subsequently, Fe-Si,l Fe-Si-Al, Fe-Nd-B, Ag-Cu-Ti, alloy steels, Ni superalloys and Si are treated as examples. Finally, the information available on process development is critically assessed

  10. Flapping dynamics of a thin liquid sheet

    Science.gov (United States)

    Vadivukkarasan, M.; Kumaran, Dhivyaraja; Panchagnula, Mahesh; Multi-phase flow physics Group Team

    2017-11-01

    We attempt to delineate and describe the complete evolution of a thin soap film when air is blown through a nozzle in the normal direction. The sequence of events and its intrinsic dynamics are captured using high speed imaging. By careful observation, it was observed that multiple mechanisms occur in the same system and each event is triggered by an independent mechanism. The events include (a) flapping of a liquid sheet and pinching of the bubble, (b) onset of rupture on the liquid sheet, (c) formation of ligaments and (d) ejection of drops. From this study, it is shown that these events are predominantly governed by Kelvin-Helmholtz instability, Taylor - Culick law, Rayleigh-Taylor instability and capillary instability, respectively. The present experiments can be considered as an extension to the previous studies on soap films as well as thin flapping sheets which has direct relevance to coaxial atomizers used in aircraft applications.

  11. Copper contamination in thin stainless steel sheet

    International Nuclear Information System (INIS)

    Holbert, R.K. Jr.; Dobbins, A.G.; Bennett, R.K. Jr.

    1986-01-01

    The standard welding technique used at Oak Ridge Y-12 Plant for joining thin stainless sheet is the gas tungsten arc (GTA) welding process. One of the reoccurring problems with the sheet welds is surface cracking in the heat-affected zone (HAZ). Metallography shows that the cracks are only about 0.05 mm (0.002 in.) deep which is significant in a 0.25 mm (0.01 in.) thick sheet. Thus, welding requirements do not permit any surfacing cracking as detected by a fluorescent dye penetrant test conducted on every part after welding. Surface cracks have been found in both of the two most common weld designs in the thin sheet fabricated at the Oak Ridge Y-12 Plant. These butt joints are welded between two 0.25 mm thick stainless steel sheets and a tube with eyelet welded to a 25 mm (0.98 in.) thick sheet. The weld between the two sheets is made on a semiautomatic seam welding unit, whereas the tube-to-eyelet-to-sheet welds are done manually. The quality of both welds is very dependent on the welding procedure and the way the parts are placed in the weld fixturing. Metallographic examination has indicated that some welded parts with surface cracking in the weld region had copper particles on the surface, and the question of copper contamination has been raised. With the aid of a scanning electron microscope and an electron microprobe, the existence of copper in an around the surface cracks has been verified. The copper is on the surface of the parts prior to welding in the form of small dust particles

  12. Nonlinear dynamics of thin current sheets

    International Nuclear Information System (INIS)

    Daughton, William

    2002-01-01

    Observations indicate that the current sheet in the Earth's geomagnetic tail may compress to a thickness comparable to an ion gyro-radius prior to substorm onset. In recent years, there has been considerable controversy regarding the kinetic stability of these thin structures. In particular, the growth rate of the kink instability and its relevance to magnetotail dynamics is still being debated. In this work, a series of fully kinetic particle-in-cell simulations are performed for a thin Harris sheet. The ion to electron mass ratio is varied between m i /m e =4→400 and careful comparisons are made with a formally exact approach to the linear Vlasov theory. At low mass ratio m i /m e <64, the simulations are in excellent agreement with the linear theory, but at high mass ratio the kink instability is observed to grow more rapidly in the kinetic simulations than predicted by theory. The resolution to this apparent discrepancy involves the lower hybrid instability which is active on the edge of the sheet and rapidly produces nonlinear modifications to the initial equilibrium. The nature of this nonlinear deformation is characterized and a simple model is proposed to explain the physics. After the growth and saturation of the lower hybrid fluctuations, the deformed current sheet is similar in structure to a Harris equilibrium with an additional background population. This may explain the large growth rate of the kink instability at later times, since this type of modification to the Harris sheet has been shown to greatly enhance the growth rate of the kink mode

  13. Fabrication and microwave shielding properties of free standing polyaniline-carbon fiber thin sheets

    International Nuclear Information System (INIS)

    Joon, Seema; Kumar, Rakesh; Singh, Avanish Pratap; Shukla, Rajni; Dhawan, S.K.

    2015-01-01

    Attempt has been made to synthesize polyaniline-carbon fiber (PANI-CF) composite via in-situ emulsion polymerization using β-naphthalene sulphonic acid (NSA) which acts as both surfactant as well as dopant. Free standing PANI-CF thin sheets are prepared which have electrical conductivity ∼1.02 S/cm with improved mechanical strength and thermal stability. The scanning electron microscopy is used to study the surface morphology of the composites. Structural characterization is done by using XRD. The dielectric attributes (ε* = ε′ − iε″) of PANI-CF sheets are calculated using experimental S parameters (S 11 , S 12 ) by Nicolson Ross Wier equations. It has been demonstrated that these sheets show maximum shielding effectiveness (SE) of 31.9 dB at 12.4 GHz frequency at a thickness of 1.5 mm. Free standing PANI-CF sheets so prepared have a potential for X-band microwave absorber application. - Highlights: • Free standing polyaniline-carbon fiber thin sheets fabricated for EMI shielding. • The mechanical strength of sheets improves with phenolic resin loading. • The dielectric parameters were calculated by Nicholson Ross Wier equations. • Sheets (1.5 mm thickness) demonstrate SE of 31.9 dB at 12.4 GHz frequency. • Sheets find potential application for X-band microwave absorption

  14. Nonlinear dielectric response in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    Lente, M. H.

    2004-08-01

    Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

    Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

  15. Chemical vapour deposition of thin-film dielectrics

    International Nuclear Information System (INIS)

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  16. The crack growth resistance of thin steel sheets under eccentric ...

    Indian Academy of Sciences (India)

    Ľ AMBRIŠKO

    2018-03-10

    Mar 10, 2018 ... Abstract. The stable crack growth in thin steel sheets is the topic of this paper. The crack opening was observed using a videoextensometry system, allowing the crack extension determination. JR-curve and dR-curve were established from obtained data. The ductile tearing properties of different thin sheets ...

  17. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  18. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  19. LASER CUTTING MACHINES FOR 3-D THIN SHEET PARTS

    Directory of Open Access Journals (Sweden)

    Miroslav RADOVANOVIC

    2012-11-01

    Full Text Available Laser cutting machines are used for precise contour cutting thin sheet. In industrial application nowadays various types and construction of laser cutting machines can be met. For contour cutting 3-D thin sheet parts laser cutting machines with rotation movements and laser robots are used. Laser generates the light beam, that presents a tool in working process. Application of laser cutting machines made possible good quality of products, flexibility of production and enlargement of economy

  20. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic......Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin......-film semiconducting material. For a particular case, we show that coupling to the same type of localized slab-waveguide modes can be obtained by a surface modulation consisting of purely dielectric strips. The purely dielectric device turns out to have a significantly higher broadband enhancement factor compared...

  1. Enhanced dielectric and electrical properties of annealed PVDF thin film

    Science.gov (United States)

    Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

    2018-05-01

    Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

  2. Stimulated Raman gain scattering in thin planar dielectric waveguides

    NARCIS (Netherlands)

    Kanger, Johannes S.; Otto, Cornelis; Greve, Jan

    1995-01-01

    The stimulated Raman gain effect in planar dielectric waveguides is analyzed for the study of thin layers. Calculations show high gain factors and predict the possibility of detecting monolayers. Compared with those for methods based on ref lection, the gain can be 4 orders of magnitude higher for a

  3. Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

    Science.gov (United States)

    Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan

    2013-06-01

    We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).

  4. Forced tearing of ductile and brittle thin sheets.

    Science.gov (United States)

    Tallinen, T; Mahadevan, L

    2011-12-09

    Tearing a thin sheet by forcing a rigid object through it leads to complex crack morphologies; a single oscillatory crack arises when a tool is driven laterally through a brittle sheet, while two diverging cracks and a series of concertinalike folds forms when a tool is forced laterally through a ductile sheet. On the other hand, forcing an object perpendicularly through the sheet leads to radial petallike tears in both ductile and brittle materials. To understand these different regimes we use a combination of experiments, simulations, and simple theories. In particular, we describe the transition from brittle oscillatory tearing via a single crack to ductile concertina tearing with two tears by deriving laws that describe the crack paths and wavelength of the concertina folds and provide a simple phase diagram for the morphologies in terms of the material properties of the sheet and the relative size of the tool.

  5. Patterns through elastic instabilities, from thin sheets to twisted ribbons

    Science.gov (United States)

    Damman, Pascal

    Sheets embedded in a given shape by external forces store the exerted work in elastic deformations. For pure tensile forces, the work is stored as stretching energy. When the forces are compressive, several ways to store the exerted work, combining stretching and bending deformations can be explored. For large deflections, the ratio of bending, Eh3ζ2 /L4 and stretching, Ehζ4 /L4 energies, suggests that strain-free solutions should be favored for thin sheets, provided ζ2 >>h2 (where E , ζ , Land h are the elastic modulus, the deflection, a characteristic sheet size and its thickness). For uniaxially constrained sheets deriving from the Elastica, strain-free solutions are obvious, i.e., buckles, folds or wrinkles grow to absorb the stress of compression. In contrast, crumpled sheets exhibit ``origami-like'' solutions usually described as an assembly of flat polygonal facets delimitated by ridges focusing strains are observed. This type of solutions is particularly interesting since a faceted morphology is isometric to the undeformed sheet, except at those narrow ridges. In some cases however, the geometric constraints imposed by the external forces do not allow solutions with negligible strain in the deformed state. For instance, considering a circular sheet on a small drop, so thin that bending becomes negligible, i.e., Eh3 / γL2 geometry and a competition between various energy terms, involving stretching and bending modes.

  6. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  7. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

    2011-01-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  8. Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

    2015-01-01

    In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

  9. Dielectric and acoustical high frequency characterisation of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  10. Assisted crack tip flipping under Mode I thin sheet tearing

    DEFF Research Database (Denmark)

    Felter, Christian Lotz; Nielsen, Kim Lau

    2017-01-01

    Crack tip flipping, where the fracture surface alternates from side to side in roughly 45° shear bands, seems to be an overlooked propagation mode in Mode I thin sheet tearing. In fact, observations of crack tip flipping is rarely found in the literature. Unlike the already established modes...

  11. Stimulation of confocal unstable resonators using thin gain sheet

    International Nuclear Information System (INIS)

    Du Yanyi

    2000-01-01

    Mode calculation in unstable resonators with flowing saturable gain using the fast Fourier transform (FFT) algorithm and thin gain sheet just nearly inside the big mirror. This method is in resonators of small disturbance (ψ 0max = π/2), middle magnification (m 0 ∼= 1%)

  12. Greenland Ice Sheet: High-Elevation Balance and Peripheral Thinning.

    Science.gov (United States)

    Krabill; Abdalati; Frederick; Manizade; Martin; Sonntag; Swift; Thomas; Wright; Yungel

    2000-07-21

    Aircraft laser-altimeter surveys over northern Greenland in 1994 and 1999 have been coupled with previously reported data from southern Greenland to analyze the recent mass-balance of the Greenland Ice Sheet. Above 2000 meters elevation, the ice sheet is in balance on average but has some regions of local thickening or thinning. Thinning predominates at lower elevations, with rates exceeding 1 meter per year close to the coast. Interpolation of our results between flight lines indicates a net loss of about 51 cubic kilometers of ice per year from the entire ice sheet, sufficient to raise sea level by 0.13 millimeter per year-approximately 7% of the observed rise.

  13. Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

    NARCIS (Netherlands)

    Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

    2007-01-01

    Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

  14. EMAT Evaluation of Thin Conductive Sheets

    Directory of Open Access Journals (Sweden)

    Ivo Cap

    2006-01-01

    Full Text Available At present a non-destructive testing of conducting materials becomes very important one in connection with monitoring and control of strategic technical facilities, e.g. nuclear power plants. There are more methods of material testing and evaluation and every of them has its advantages and disadvantages. Recently the electromagnetic methods are in increasing interest. There are many ways of conducting material testing. One of them often used utilises investigation of eddy currents induced in the surface layer by means of a proper coil. The arrangement is very simple and inexpensive but it offers only local information on cracks and other inhomogeneities in the thin surface layer. On the other hand there exist a method based on an electromagnetic – acoustic transducer (EMAT, which is able to generate and detect acoustic wave in a conducting body in a contact-less way. The present paper deals with a survey of EMATs for investigation of thin metalliclayers by means of Lamb waves. The new design of generation coil is presented.

  15. Thin lead sheets in the decorative features in Pavia Charterhouse.

    Science.gov (United States)

    Colombo, Chiara; Realini, Marco; Sansonetti, Antonio; Rampazzi, Laura; Casadio, Francesca

    2006-01-01

    The facade of the church of the Pavia Charterhouse, built at the end of the 15th century, shows outstanding decorative features made of different stone materials, such as marbles, breccias and sandstones. Magnificent ornamental elements are made of thin lead sheets, and some marble slabs are inlaid with them. Metal elements are shaped in complex geometric and phytomorphic design, to form a Greek fret in black contrasting with the white Carrara marble. Lead pins were fixed to the back of the thin lead sheets with the aim of attaching the metal elements to the marble; in so doing the pins and the lead sheets constitute a single piece of metal. In some areas, lead elements have been lost, and they have been substituted with a black plaster, matching the colour of the metal. To the authors' knowledge, this kind of decorative technique is rare, and confirms the refinement of Renaissance Lombard architecture. This work reports on the results of an extensive survey of the white, orange and yellowish layers, which are present on the external surface of the lead. The thin lead sheets have been characterized and their state of conservation has been studied with the aid of Optical Microscopy, SEM-EDS, FTIR and Raman analyses. Lead sulphate, lead carbonates and oxides have been identified as decay products.

  16. Method and apparatus for determining weldability of thin sheet metal

    Science.gov (United States)

    Goodwin, Gene M.; Hudson, Joseph D.

    1988-01-01

    A fixture is provided for testing thin sheet metal specimens to evaluate hot-cracking sensitivity for determining metal weldability on a heat-to-heat basis or through varying welding parameters. A test specimen is stressed in a first direction with a load selectively adjustable over a wide range and then a weldment is passed along over the specimen in a direction transverse to the direction of strain to evaluate the hot-cracking characteristics of the sheet metal which are indicative of the weldability of the metal. The fixture provides evaluations of hot-cracking sensitivity for determining metal weldability in a highly reproducible manner with minimum human error.

  17. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  18. Prototypical model for tensional wrinkling in thin sheets

    KAUST Repository

    Davidovitch, B.; Schroll, R. D.; Vella, D.; Adda-Bedia, M.; Cerda, E. A.

    2011-01-01

    The buckling and wrinkling of thin films has recently seen a surge of interest among physicists, biologists, mathematicians, and engineers. This activity has been triggered by the growing interest in developing technologies at ever-decreasing scales and the resulting necessity to control the mechanics of tiny structures, as well as by the realization that morphogenetic processes, such as the tissue-shaping instabilities occurring in animal epithelia or plant leaves, often emerge from mechanical instabilities of cell sheets. Although the most basic buckling instability of uniaxially compressed plates was understood by Euler more than two centuries ago, recent experiments on nanometrically thin (ultrathin) films have shown significant deviations from predictions of standard buckling theory. Motivated by this puzzle, we introduce here a theoretical model that allows for a systematic analysis of wrinkling in sheets far from their instability threshold. We focus on the simplest extension of Euler buckling that exhibits wrinkles of finite length--a sheet under axisymmetric tensile loads. The first study of this geometry, which is attributed to Lamé, allows us to construct a phase diagram that demonstrates the dramatic variation of wrinkling patterns from near-threshold to far-from-threshold conditions. Theoretical arguments and comparison to experiments show that the thinner the sheet is, the smaller is the compressive load above which the far-from-threshold regime emerges. This observation emphasizes the relevance of our analysis for nanomechanics applications.

  19. Prototypical model for tensional wrinkling in thin sheets

    KAUST Repository

    Davidovitch, B.

    2011-10-31

    The buckling and wrinkling of thin films has recently seen a surge of interest among physicists, biologists, mathematicians, and engineers. This activity has been triggered by the growing interest in developing technologies at ever-decreasing scales and the resulting necessity to control the mechanics of tiny structures, as well as by the realization that morphogenetic processes, such as the tissue-shaping instabilities occurring in animal epithelia or plant leaves, often emerge from mechanical instabilities of cell sheets. Although the most basic buckling instability of uniaxially compressed plates was understood by Euler more than two centuries ago, recent experiments on nanometrically thin (ultrathin) films have shown significant deviations from predictions of standard buckling theory. Motivated by this puzzle, we introduce here a theoretical model that allows for a systematic analysis of wrinkling in sheets far from their instability threshold. We focus on the simplest extension of Euler buckling that exhibits wrinkles of finite length--a sheet under axisymmetric tensile loads. The first study of this geometry, which is attributed to Lamé, allows us to construct a phase diagram that demonstrates the dramatic variation of wrinkling patterns from near-threshold to far-from-threshold conditions. Theoretical arguments and comparison to experiments show that the thinner the sheet is, the smaller is the compressive load above which the far-from-threshold regime emerges. This observation emphasizes the relevance of our analysis for nanomechanics applications.

  20. Linear theory of a dielectric-loaded rectangular Cerenkov maser with a sheet electron beam

    International Nuclear Information System (INIS)

    Chen Ye; Wan Xiao-Sheng; Zhao Ding; Liu Wen-Xin; Wang Yong

    2012-01-01

    A three-dimensional model of a dielectric-loaded rectangular Cerenkov maser with a sheet electron beam for the beam-wave interaction is proposed. Based on this model, the hybrid-mode dispersion equation is derived with the Borgnis potential function by using the field-matching method. Its approximate solution is obtained under the assumption of a dilute electron beam. By using the Ansoft high frequency structural simulator (HFSS) code, the electromagnetic field distribution in the interaction structure is given. Through numerical calculations, the effects of beam thickness, beam and dielectric-layer gap distance, beam voltage, and current density on the resonant growth rate are analysed in detail

  1. Interaction of a charge with a thin plasma sheet

    International Nuclear Information System (INIS)

    Bordag, M.

    2007-01-01

    The interaction of the electromagnetic field with a two-dimensional plasma sheet intended to describe the pi-electrons of a carbon nanotube or a C 60 molecule is investigated. By first integrating out the displacement field of the plasma or the electromagnetic field, different representations for quantities like the Casimir energy are derived which are shown to be consistent with one another. Starting from the covariant gauge for the electromagnetic field, it is shown that the matching conditions to which the presence of the plasma sheet can be reduced are different from the commonly used ones. The difference in the treatments does not show up in the Casimir force between two parallel sheets, but it is present in the Casimir-Polder force between a charge or a neutral atom and a sheet. At once, since the plasma sheet is a regularization of the conductor boundary conditions, this sheds light on the difference in physics found earlier in the realization of conductor boundary conditions as 'thin' or 'thick' boundary conditions in Phys. Rev. D 70, 085010 (2004)

  2. Laser-induced damage to thin film dielectric coatings

    International Nuclear Information System (INIS)

    Walker, T.W.

    1980-01-01

    The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process

  3. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  4. Keyhole shapes during laser welding of thin metal sheets

    International Nuclear Information System (INIS)

    Aalderink, B J; Lange, D F de; Aarts, R G K M; Meijer, J

    2007-01-01

    Camera observations of the full penetration keyhole laser welding process show that the keyhole shape is elongated under certain welding conditions. Under these unfavourable circumstances, the welding process is susceptible to holes in the weld bead. Existing models of the pressure balance at the keyhole wall cannot explain this keyhole elongation. In this paper a new model is presented, accounting for the doubly curved shape of the keyhole wall. In this model, the surface tension pressure has one term that tends to close the keyhole and another term that tries to open it. Model calculations show that when the keyhole diameter is of the same order as the sheet thickness, the latter part can become dominant, causing the keyhole to elongate. Experiments on thin aluminium (AA5182) and mild steel (DC04) sheets verify these model calculations. As the keyhole radius depends on the radius of the focused laser spot, it was found for both materials that the ratio of the spot radius and the sheet thickness must be above a critical value to prevent keyhole elongation. These critical radii are 0.25 for AA5182 and 0.4 for DC04, respectively. Furthermore, differences in appearance of the weld bead between the circular and the elongated keyhole welds could be explained by this model

  5. Thin current sheets observation by MMS during a near-Earth's magnetotail reconnection event

    Science.gov (United States)

    Nakamura, R.; Varsani, A.; Nakamura, T.; Genestreti, K.; Plaschke, F.; Baumjohann, W.; Nagai, T.; Burch, J.; Cohen, I. J.; Ergun, R.; Fuselier, S. A.; Giles, B. L.; Le Contel, O.; Lindqvist, P. A.; Magnes, W.; Schwartz, S. J.; Strangeway, R. J.; Torbert, R. B.

    2017-12-01

    During summer 2017, the four spacecraft of the Magnetospheric Multiscale (MMS) mission traversed the nightside magnetotail current sheet at an apogee of 25 RE. They detected a number of flow reversal events suggestive of the passage of the reconnection current sheet. Due to the mission's unprecedented high-time resolution and spatial separation well below the ion scales, structure of thin current sheets is well resolved both with plasma and field measurements. In this study we examine the detailed structure of thin current sheets during a flow reversal event from tailward flow to Earthward flow, when MMS crossed the center of the current sheet . We investigate the changes in the structure of the thin current sheet relative to the X-point based on multi-point analysis. We determine the motion and strength of the current sheet from curlometer calculations comparing these with currents obtained from the particle data. The observed structures of these current sheets are also compared with simulations.

  6. Structural, dielectric and AC conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    52

    However, to date, no reports have appeared on impedance spectroscopy, modulus behavior, electrical conductivity, dielectric relaxation and dielectric properties of crystalline Sb2O3 thin films. This paper deals for the first time with the frequency and temperature dependence of AC conductivity and complex electric modulus ...

  7. Sol–gel deposited ceria thin films as gate dielectric for CMOS ...

    Indian Academy of Sciences (India)

    Sol–gel deposited ceria thin films as gate dielectric for CMOS technology. ANIL G KHAIRNAR ... The semiconductor roadmap following Moore's law is responsible for ..... The financial support from University Grants Commi- ssion (UGC), New ...

  8. Sausage mode instability of thin current sheets as a cause of magnetospheric substorms

    Directory of Open Access Journals (Sweden)

    J. Büchner

    Full Text Available Observations have shown that, prior to substorm explosions, thin current sheets are formed in the plasma sheet of the Earth's magnetotail. This provokes the question, to what extent current-sheet thinning and substorm onsets are physically, maybe even causally, related. To answer this question, one has to understand the plasma stability of thin current sheets. Kinetic effects must be taken into account since particle scales are reached in the course of tail current-sheet thinning. We present the results of theoretical investigations of the stability of thin current sheets and about the most unstable mode of their decay. Our conclusions are based upon a non-local linear dispersion analysis of a cross-magnetic field instability of Harris-type current sheets. We found that a sausage-mode bulk current instability starts after a sheet has thinned down to the ion inertial length. We also present the results of three-dimensional electromagnetic PIC-code simulations carried out for mass ratios up to Mi / me=64. They verify the linearly predicted properties of the sausage mode decay of thin current sheets in the parameter range of interest.

    Key words. Magnetospheric physics (plasma waves and instabilities; storms and substorms · Space plasma physics (magnetic reconnection

  9. Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

    Science.gov (United States)

    Roy, Dhrubojyoti

    2018-05-01

    Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

  10. Microplasma light tiles: thin sheet lamps for general illumination

    Energy Technology Data Exchange (ETDEWEB)

    Eden, J G; Park, S-J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Herring, C M; Bulson, J M [Eden Park Illumination, 903 North Country Fair Drive, Champaign, IL 61821 (United States)

    2011-06-08

    Flat, thin and lightweight lamps providing spatially uniform and dimmable illumination from active areas as large as 400 cm{sup 2} are being developed for general illumination and specialty applications. Comprising an array of low-temperature, nonequilibrium microplasmas driven by a dielectric barrier structure and operating at pressures of typically 400-700 Torr, these lamps have a packaged thickness <4 mm and yet produce luminance values beyond 26 000 cd m{sup -2} with a luminous efficacy approaching 30 lm W{sup -1}. Third generation lamps, presently in limited production, offer a correlated colour temperature in the 3000-4100 K interval and a colour rendering index of 80. Current lamps employ Xe{sub 2} ({lambda} {approx} 172 nm) as the primary emitter photoexciting a mixture of phosphors, and the pressure dependence of the wavelength-integrated fluorescence from the electronically excited dimer has been investigated with a vacuum ultraviolet spectrometer. In contrast to other promising lighting technologies, the decline in luminous efficacy of microplasma lamps with increasing power delivered to the lamp is small. For a 6 x 6 inch{sup 2} ({approx}225 cm{sup 2}) lamp, efficacy falls <16% when the radiant output (luminance) is raised from 2000 cd m{sup -2} to > 10 000 cd m{sup -2}.

  11. Investigation of SiO2 thin films dielectric constant using ellipsometry technique

    Directory of Open Access Journals (Sweden)

    P Sangpour

    2014-11-01

    Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

  12. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  13. Dielectric materials for use in thin-film capacitors

    Science.gov (United States)

    Carr, H. E.; Foster, W. D.; Fromhold, A. T., Jr.; Harbuck, T. A.

    1969-01-01

    Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

  14. Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

    International Nuclear Information System (INIS)

    Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

    2015-01-01

    A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

  15. Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

    International Nuclear Information System (INIS)

    Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

    2007-01-01

    With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

  16. PHYSICAL BASES OF SYSTEMS CREATION FOR MAGNETIC-IMPULSIVE ATTRACTION OF THIN-WALLED SHEET METALS

    Directory of Open Access Journals (Sweden)

    Y. Batygin

    2009-01-01

    Full Text Available The work is dedicated to the physical base of systems creating for the thin-walled sheet metals magnetic pulse attraction. Some practical realization models of the author’s suggestions are represented.

  17. Complete plasma dropouts at Vela satellites during thinning of the plasma sheet

    International Nuclear Information System (INIS)

    Lui, A.T.Y.; Hones, E.W. Jr.; Venkatesan, D.; Akasofu, S.; Bame, S.J.

    1975-01-01

    Five satellite years of Vela data are examined for plasma sheet thinnings. Complete proton disappearances (plasma dropouts) are the main subject here. During such times, the Vela satellite is temporarily in the high-latitude tail lobe. The distribution of such plasma dropouts within the magnetotail suggests that the semithickness of the plasma sheet near midnight seldom reaches less than 1 R/sub E/ during substorms and that the dawn and dusk portions of the plasma sheet remain thicker than the midnight portion. But it is also shown that the plasma sheet occasionally becomes very thin near the dusk magnetopause. No such severe thinnings of the plasma sheet are found near the dawn magnetopause. Plasma dropouts can occur regardless of the sign of the Z component of the IMF, but their frequency of occurrence seems to be greater when the Z component is negative.Three plasma dropouts which occurred in the midnight sector at unusually large distances from the estimated position of the neutral sheet were observed during geomagnetic storms. It is likely that the midnight sector of the plasma sheet can become very thick (approx.18 R/sub E/) at certain times during the main phase of storms. Detailed measurements in the plasma sheet were obtained near the beginning of a geomagnetic storm whose sc triggered a substorm. A compression of the plasma sheet at X/sub SM/approx. =-15 R/sub E/ occurred about 10 min after the sc onset at the earth and about 5 min after the start of plasma sheet thinning associated with the sc-related substorm. If compression-thinning of the plasma sheet initiated this substorm, the triggering action must have occurred earthward of X/sub SM/approx. =-15 R/sub E/

  18. Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

    Science.gov (United States)

    Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

    2017-08-16

    In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation

  19. Effect of crystal structure on strontium titanate thin films and their dielectric properties

    Science.gov (United States)

    Kampangkeaw, Satreerat

    Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

  20. Bi-axially crumpled silver thin-film electrodes for dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Low, Sze-Hsien; Lau, Gih-Keong

    2014-01-01

    Metal thin films, which have high conductivity, are much stiffer and may fracture at a much lower strain than dielectric elastomers. In order to fabricate compliant electrodes for use in dielectric elastomer actuators (DEAs), metal thin films have been formed into either zigzag patterns or corrugations, which favour bending and only allow uniaxial DEA deformations. However, biaxially compliant electrodes are desired in order to maximize generated forces of DEA. In this paper, we present crumpled metal thin-film electrodes that are biaxially compliant and have full area coverage over the dielectric elastomer. These crumpled metal thin-film electrodes are more stretchable than flat metal thin films; they remain conductive beyond 110% radial strain. Also, crumpling reduced the stiffening effect of metal thin films on the soft elastomer. As such, DEAs using crumpled metal thin-film electrodes managed to attain relatively high actuated area strains of up to 128% at 1.8 kV (102 Vμm −1 ). (paper)

  1. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  2. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    Science.gov (United States)

    Baniecki, John David

    This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

  3. Surface Morphology and Bending Deformation of 2024-T3 Thin Sheets with Laser Peen Forming

    Directory of Open Access Journals (Sweden)

    Wu Junfeng

    2018-01-01

    Full Text Available Laser peen forming (LPF is a pure mechanical forming method through accumulated plastic strain, which has been successfully applied in wing components. Experimental investigation has been performed to understand the effect of process parameters such as constraint conditions, sheet thickness and laser energy on surface morphology and bending deformation of 2024-T3 thin sheets of dimensions of 76 mm ×19 mm (length × width. The research results indicated that bulges on the aluminum foil were generated at the bottom surface and not generated at the topmost surface. It was different for transition value of two-way bending deformations of thin sheets after LPF with different constraint conditions. Remain flat thicknesses of thin sheets after LPF were about 1 mm ~ 2 mm for 20 J, 25 J and 30 J. Arc heights and curvatures of 3 mm thickness sheets increased with laser energy and those of 2 mm thickness sheets only made little change. It was found that convex deformation, flat, concave deformation and laser deep drawing for thin sheets with different thicknesses after LPF.

  4. Fabrication and properties of strip casting 4.5 wt% Si steel thin sheet

    Energy Technology Data Exchange (ETDEWEB)

    Zu, Guoqing, E-mail: gz854@uowmail.edu.au [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Zhang, Xiaoming [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhao, Jingwei [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Wang, Yuqian [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Yan, Yi [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Li, Chengang; Cao, Guangming [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Jiang, Zhengyi [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia)

    2017-02-15

    Three 4.5 wt% Si steel thin sheets with different thicknesses were efficiently fabricated by twin-roll strip casting, warm rolling and cold rolling followed by final annealing. A comprehensive investigation from the workability of the as-cast strip to the magnetic property of the produces was performed to illustrate the superiority of the new materials. The results show that the as-cast strip, which has a much lower Vickers hardness than that of the 6.5 wt% Si steel, is suitable for rolling processing. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies confirm that no ordering phase exists in the as-cast strip. The cold-rolled thin sheets exhibit good surface quality without edge cracks. Furthermore, all the three 4.5 wt% Si steel thin sheets possess relative strong <100>//ND texture and present high magnetic inductions and low iron losses after finial annealing. - Highlights: • 4.5 wt% Si as-cast sheet with excellent workability was produced by strip casting. • Three 4.5 wt% Si thin sheets were effectively fabricated by warm and cold rolling. • The microstructure and macro-texture of the thin sheets were elucidated. • High magnetic inductions and low iron losses were achieved simultaneously.

  5. Dielectrophoretic deformation of thin liquid films induced by surface charge patterns on dielectric substrates

    NARCIS (Netherlands)

    Berendsen, C.W.J.; Kuijpers, C.J.; Zeegers, J.C.H.; Darhuber, A.A.

    2013-01-01

    We studied the deformation of thin liquid films induced by surface charge patterns at the solid–liquid interface quantitatively by experiments and numerical simulations. We deposited a surface charge distribution on dielectric substrates by applying potential differences between a conductive liquid

  6. Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

    Science.gov (United States)

    Giacometti, José A.

    2018-05-01

    This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

  7. Nonlinear equilibrium structure of thin currents sheets: influence of electron pressure anisotropy

    Directory of Open Access Journals (Sweden)

    L. M. Zelenyi

    2004-01-01

    Full Text Available Thin current sheets represent important and puzzling sites of magnetic energy storage and subsequent fast release. Such structures are observed in planetary magnetospheres, solar atmosphere and are expected to be widespread in nature. The thin current sheet structure resembles a collapsing MHD solution with a plane singularity. Being potential sites of effective energy accumulation, these structures have received a good deal of attention during the last decade, especially after the launch of the multiprobe CLUSTER mission which is capable of resolving their 3D features. Many theoretical models of thin current sheet dynamics, including the well-known current sheet bifurcation, have been developed recently. A self-consistent 1D analytical model of thin current sheets in which the tension of the magnetic field lines is balanced by the ion inertia rather than by the plasma pressure gradients was developed earlier. The influence of the anisotropic electron population and of the corresponding electrostatic field that acts to restore quasi-neutrality of the plasma is taken into account. It is assumed that the electron motion is fluid-like in the direction perpendicular to the magnetic field and fast enough to support quasi-equilibrium Boltzmann distribution along the field lines. Electrostatic effects lead to an interesting feature of the current density profile inside the current sheet, i.e. a narrow sharp peak of electron current in the very center of the sheet due to fast curvature drift of the particles in this region. The corresponding magnetic field profile becomes much steeper near the neutral plane although the total cross-tail current is in all cases dominated by the ion contribution. The dependence of electrostatic effects on the ion to electron temperature ratio, the curvature of the magnetic field lines, and the average electron magnetic moment is also analyzed. The implications of these effects on the fine structure of thin current sheets

  8. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  9. FDTD simulations and analysis of thin sample dielectric properties measurements using coaxial probes

    Energy Technology Data Exchange (ETDEWEB)

    Bringhurst, S.; Iskander, M.F.; White, M.J. [Univ. of Utah, Salt Lake City, UT (United States). Electrical Engineering Dept.

    1996-12-31

    A metallized ceramic probe has been designed for high temperature broadband dielectric properties measurements. The probe was fabricated out of an alumina tube and rod as the outer and inner conductors respectively. The alumina was metallized with a 3 mil layer of moly-manganese and then covered with a 0.5 mil protective layer of nickel plating. The probe has been used to make complex dielectric properties measurements over the complete frequency band from 500 MHz to 3 GHz, and for temperatures as high as 1,000 C. A 3D Finite-Difference Time-Domain (FDTD) code was used to help investigate the feasibility of this probe to measure the complex permittivity of thin samples. It is shown that by backing the material under test with a standard material of known dielectric constant, the complex permittivity of thin samples can be measured accurately using the developed FDTD algorithm. This FDTD procedure for making thin sample dielectric properties measurements will be described.

  10. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    Directory of Open Access Journals (Sweden)

    Liu X.

    2015-04-01

    Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

  11. Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

    International Nuclear Information System (INIS)

    Li, Qiang; Xu, Mengmeng; Fan, Huiqing; Wang, Hairong; Peng, Biaolin; Long, Changbai; Zhai, Yuchun

    2013-01-01

    Highlights: ► Bottom-up self-assembly Cu 2 O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET). ► The dielectric response of Cu 2 O/ZnO heterojunction thin films had been investigated. ► The universal dielectric response was used to investigate the hopping behavior in Cu 2 O/ZnO heterojunction. -- Abstract: Structures and morphologies of the Cu 2 O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu 2 O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu 2 O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively

  12. Self-standing chitosan films as dielectrics in organic thin-film transistors

    Directory of Open Access Journals (Sweden)

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  13. Associations of geomagnetic activity with plasma sheet thinning and expansion: A statistical study

    International Nuclear Information System (INIS)

    Hones, E.W. Jr.; Pytte, T.; West, H.I. Jr.

    1984-01-01

    Associations of geomagnetic activity in the auroral zone with thinnings and expansions of the magnetotail plasma sheet are examined statistically in this paper. We first identified many plasma sheet thinnings and expansions in plasma and particle data from VELA satellites and from OGO 5 without reference to the ground magnetic data. These events were grouped according to the location of the detecting satellite in the magnetotail. For each such group the times of thinning or expansion were then used as fiducial times in a superposed-epoch analysis of the geomagnetic AL index values that were recorded in 8-hour intervals centered on the event times. The results show that many plasma sheet thinnings and expansions are related to discrete negative bay structures that are the classical signature of substorms. Furthermore, they support earlier findings that plasma sheet thinning and expansion at the VELA orbit (rroughly-equal18 R/sub E/) tend to be associated with the onset of the auroral zone negative bay and the beginning of its subsidence, respectively. Earthward of rroughly-equal13-15 R/sub E/, plasma sheet expansion occurs near the time of the onset of the negative bay, again in agreement with earlier findings. A large fraction of plasma sheet expansions to half thicknesses of > or approx. =6 R/sub E/ at the VELA orbit are associated not with a baylike geomagnetic disturbance but with subsidence of a prolonged interval of disturbance. The study also shows that many plasma sheet expansions are related simply to generally enhanced geomagnetic activity showing no baylike or other distinctive features

  14. Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

    Science.gov (United States)

    van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

    2015-08-12

    We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

  15. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  16. The crack growth resistance of thin steel sheets under eccentric ...

    Indian Academy of Sciences (India)

    Ľ AMBRIŠKO

    2018-03-10

    Mar 10, 2018 ... of zinc-coated automotive steel sheets (IF – deep drawing interstitial free steel ..... to determine; therefore, the Ji was determined for observ- able crack initiation .... M R S, da Silva L F M and de Castro P M S T 2011. Analysis of ...

  17. Nanomechanical probing of thin-film dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Seifi, Saman; Park, Harold S.; Leung, Vanessa; Töpper, Tino; Müller, Bert

    2017-08-01

    Dielectric elastomer transducers (DETs) have attracted interest as generators, actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. Their performance crucially depends on the elastic properties of the electrode-elastomer sandwich structure. The compressive displacement of a single-layer DET can be easily measured using atomic force microscopy (AFM) in the contact mode. While polymers used as dielectric elastomers are known to exhibit significant mechanical stiffening for large strains, their mechanical properties when subjected to voltages are not well understood. To examine this effect, we measured the depths of 400 nanoindentations as a function of the applied electric field using a spherical AFM probe with a radius of (522 ± 4) nm. Employing a field as low as 20 V/μm, the indentation depths increased by 42% at a load of 100 nN with respect to the field-free condition, implying an electromechanically driven elastic softening of the DET. This at-a-glance surprising experimental result agrees with related nonlinear, dynamic finite element model simulations. Furthermore, the pull-off forces rose from (23.0 ± 0.4) to (49.0 ± 0.7) nN implying a nanoindentation imprint after unloading. This embossing effect is explained by the remaining charges at the indentation site. The root-mean-square roughness of the Au electrode raised by 11% upon increasing the field from zero to 12 V/μm, demonstrating that the electrode's morphology change is an undervalued factor in the fabrication of DET structures.

  18. Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H, E-mail: Jamie.warner@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2011-05-13

    We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

  19. Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

    International Nuclear Information System (INIS)

    Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H

    2011-01-01

    We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

  20. Thin film plasma coatings from dielectric free-flowing materials

    International Nuclear Information System (INIS)

    Timofeeva, L.A.; Katrich, S.A.; Solntsev, L.A.

    1994-01-01

    Fabrication of thin film plasma coatings from insulating free-flowing materials is considered. Molybdenum-tart ammonium coating of 3...5 μ thickness deposited on glassy carbon, aluminium, silicon, nickel, cast iron and steel substrates in 'Bulat-ZT' machine using insulating free-flowing materials cathod was found to form due to adsorption, absorption and dissuasion processes. The use of insulating free-flowing materials coatings allow to exclude pure metals cathods in plasma-plating process

  1. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  2. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    Science.gov (United States)

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  3. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  4. Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

    Science.gov (United States)

    Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

    2016-07-11

    The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

  5. Impulse Hydroforming Method for Very Thin Sheets from Metallic or Hybrid Materials

    OpenAIRE

    Beerwald, C.; Beerwald, M.; Dirksen, U.; Henselek, A.

    2010-01-01

    Forming of very thin metallic and hybrid material foils is a demanding task in several application areas as for example in food or pharmaceutical packaging industries. Narrow forming limits of very thin sheet metals as well as minor process reliability due to necessary exact tool manufacturing (small punch-die clearance), both, causes abiding interest in new and innovative forming processes. In this contribution a new method using high pressure pulses will be introduced to form small geometry...

  6. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  7. Dielectric properties of electron irradiated PbZrO 3 thin films

    Indian Academy of Sciences (India)

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

  8. Statistical analysis of absorptive laser damage in dielectric thin films

    International Nuclear Information System (INIS)

    Budgor, A.B.; Luria-Budgor, K.F.

    1978-01-01

    The Weibull distribution arises as an example of the theory of extreme events. It is commonly used to fit statistical data arising in the failure analysis of electrical components and in DC breakdown of materials. This distribution is employed to analyze time-to-damage and intensity-to-damage statistics obtained when irradiating thin film coated samples of SiO 2 , ZrO 2 , and Al 2 O 3 with tightly focused laser beams. The data used is furnished by Milam. The fit to the data is excellent; and least squared correlation coefficients greater than 0.9 are often obtained

  9. Diffusion-induced bending of thin sheet couples : theory and experiments in Ti-Zr system

    NARCIS (Netherlands)

    Daruka, I.; Szabo, I.A.; Beke, D.L.; Cserhati, C.; Kodentsov, A.; Loo, van F.J.J.

    1996-01-01

    Numerical and analytical calculations of concentration and stress distributions of thin-sheet diffusion couples have been carried out as well as the time dependence of the Kirkendall shift, xk, and the curvature has also been determined. It is shown that the concentration distribution is not

  10. Double fillet lap of laser welding of thin sheet AZ31B Mg alloy

    Science.gov (United States)

    Ishak, Mahadzir; Salleh, M. N. M.

    2018-05-01

    In this paper, we describe the experimental laser welding of thin sheet AZ31B using double fillet lap joint method. Laser welding is capable of producing high quality weld seams especially for small weld bead on thin sheet product. In this experiment, both edges for upper and lower sheets were subjected to the laser beam from the pulse wave (PW) mode of fiber laser. Welded sample were tested their joint strength by tensile-shear strength method and the fracture loads were studied. Strength for all welded samples were investigated and the effect of laser parameters on the joint strength and appearances were studied. Pulsed energy (EP) from laser process give higher effect on joint strength compared to the welding speed (WS) and angle of irradiation (AOI). Highest joint strength was possessed by sample with high EP with the same value of WS and AOI. The strength was low due to the crack defect at the centre of weld region.

  11. Experimental Investigation into Suitable Process Conditions for Plastic Injection Molding of Thin-Sheet Parts

    Directory of Open Access Journals (Sweden)

    Dyi-Cheng Chen

    2014-04-01

    Full Text Available This study performs an experimental investigation into the effects of the process parameters on the surface quality of injection molded thin-sheet thermoplastic components. The investigations focus specifically on the shape, number and position of the mold gates, the injection pressure and the injection rate. It can be seen that the gravity force entering point improved filling of the cavity for the same forming time and injection pressure. Moreover, it shows the same injection pressure and packing time, the taper-shape gate yields a better surface appearance than the sheet-shape gate. The experimental results provide a useful source of reference in suitable the process conditions for the injection molding of thin-sheet plastic components.

  12. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  13. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  14. Electron Cooling and Isotropization during Magnetotail Current Sheet Thinning: Implications for Parallel Electric Fields

    Science.gov (United States)

    Lu, San; Artemyev, A. V.; Angelopoulos, V.

    2017-11-01

    Magnetotail current sheet thinning is a distinctive feature of substorm growth phase, during which magnetic energy is stored in the magnetospheric lobes. Investigation of charged particle dynamics in such thinning current sheets is believed to be important for understanding the substorm energy storage and the current sheet destabilization responsible for substorm expansion phase onset. We use Time History of Events and Macroscale Interactions during Substorms (THEMIS) B and C observations in 2008 and 2009 at 18 - 25 RE to show that during magnetotail current sheet thinning, the electron temperature decreases (cooling), and the parallel temperature decreases faster than the perpendicular temperature, leading to a decrease of the initially strong electron temperature anisotropy (isotropization). This isotropization cannot be explained by pure adiabatic cooling or by pitch angle scattering. We use test particle simulations to explore the mechanism responsible for the cooling and isotropization. We find that during the thinning, a fast decrease of a parallel electric field (directed toward the Earth) can speed up the electron parallel cooling, causing it to exceed the rate of perpendicular cooling, and thus lead to isotropization, consistent with observation. If the parallel electric field is too small or does not change fast enough, the electron parallel cooling is slower than the perpendicular cooling, so the parallel electron anisotropy grows, contrary to observation. The same isotropization can also be accomplished by an increasing parallel electric field directed toward the equatorial plane. Our study reveals the existence of a large-scale parallel electric field, which plays an important role in magnetotail particle dynamics during the current sheet thinning process.

  15. Anomalous resistivity due to kink modes in a thin current sheet

    International Nuclear Information System (INIS)

    Moritaka, Toseo; Horiuchi, Ritoku; Ohtani, Hiroaki

    2007-01-01

    The roles of microscopic plasma instabilities on the violation of the frozen-in constraint are investigated by examining the force balance equation based on explicit electromagnetic particle simulation for a thin current sheet. Wave-particle interactions associated with lower hybrid drift instability and drift kink instability (DKI) contribute to the wavy electric force term at the periphery of the current sheet and the wavy magnetic force term at the neutral sheet, respectively. In the linear growing phase of DKI, the wavy magnetic force term balances with the electric force term due to the dc electric field at the neutral sheet. It is concluded that the growth of DKI can create anomalous resistivity and result in the violation of the frozen-in constraint as well as the diffusion of current density

  16. Thin dielectric film thickness determination by advanced transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  17. Electromagnetic confinement and movement of thin sheets of molten metal

    Science.gov (United States)

    Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

    1990-01-01

    An apparatus capable of producing a combination of magnetic fields that can retain a metal in liquid form in a region having a smooth vertical boundary including a levitation magnet that produces low frequency magnetic field traveling waves to retain the metal and a stabilization magnet that produces a high frequency magnetic field to produce a smooth vertical boundary. As particularly adapted to the casting of solid metal sheets, a metal in liquid form can be continuously fed into one end of the confinement region produced by the levitation and stabilization magnets and removed in solid form from the other end of confinement region. An additional magnet may be included for support at the edges of the confinement region where eddy currents loop.

  18. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    International Nuclear Information System (INIS)

    Norwood, D.P.

    1989-01-01

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

  19. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    International Nuclear Information System (INIS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-01-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  20. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  1. All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

    Science.gov (United States)

    Petronijevic, Emilija; Sibilia, Concita

    2017-05-01

    Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

  2. Confined disclinations: exterior versus material constraints in developable thin elastic sheets.

    Science.gov (United States)

    Efrati, Efi; Pocivavsek, Luka; Meza, Ruben; Lee, Ka Yee C; Witten, Thomas A

    2015-02-01

    We examine the shape change of a thin disk with an inserted wedge of material when it is pushed against a plane, using analytical, numerical, and experimental methods. Such sheets occur in packaging, surgery, and nanotechnology. We approximate the sheet as having vanishing strain, so that it takes a conical form in which straight generators converge to a disclination singularity. Then, its shape is that which minimizes elastic bending energy alone. Real sheets are expected to approach this limiting shape as their thickness approaches zero. The planar constraint forces a sector of the sheet to buckle into the third dimension. We find that the unbuckled sector is precisely semicircular, independent of the angle δ of the inserted wedge. We generalize the analysis to include conical as well as planar constraints and thereby establish a law of corresponding states for shallow cones of slope ε and thin wedges. In this regime, the single parameter δ/ε^{2} determines the shape. We discuss the singular limit in which the cone becomes a plane, and the unexpected slow convergence to the semicircular buckling observed in real sheets.

  3. Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

    International Nuclear Information System (INIS)

    Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

    2012-01-01

    Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

  4. Coupled Optical Tamm States in a Planar Dielectric Mirror Structure Containing a Thin Metal Film

    International Nuclear Information System (INIS)

    Zhou Hai-Chun; Yang Guang; Lu Pei-Xiang; Wang Kai; Long Hua

    2012-01-01

    The coupling between two optical Tamm states (OTSs) with the same eigenenergy is numerically investigated in a planar dielectric mirror structure containing a thin metal film. The reflectivity map in this structure at normal incidence is obtained by applying the transfer matrix method. Two splitting branches appear in the photonic bandgap region when both adjacent dielectric layers of metal film are properly set. The splitting energy of two branches strongly depends on the thickness of the metal film. According to the electric field distribution in this structure, it is found that the high-energy branch corresponds to the antisymmetric coupling between two OTSs, while the low-energy branch is associated with the symmetric coupling between two OTSs. Moreover, the optical difference frequency of two branches is located in a broad terahertz region. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  6. Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Caringal, Gideon Peter; Clausen, Jeppe Sandvik

    2015-01-01

    Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial...... frequency in the range 5-7 mu m(-1). A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed...... to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications...

  7. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    A. Artemenko

    2013-04-01

    Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  8. Improvement of formability for fabricating thin continuously corrugated structures in sheet metal forming process

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Park, Sang Hu; Park, Seong Hun; Ha, Man Yeong; Jeong, Ho Seung; Cho, Jong Rae

    2012-01-01

    A stamping process is widely used for fabricating various sheet metal parts for vehicles, airplanes, and electronic devices by the merit of low processing cost and high productivity. Recently, the use of thin sheets with a corrugated structure for sheet metal parts has rapidly increased for use in energy management devices, such as heat exchangers, separators in fuel cells, and many others. However, it is not easy to make thin corrugated structures directly using a single step stamping process due to their geometrical complexity and very thin thickness. To solve this problem, a multi step stamping (MSS) process that includes a heat treatment process to improve formability is proposed in this work: the sequential process is the initial stamping, heat treatment, and final shaping. By the proposed method, we achieved successful results in fabricating thin corrugated structures with an average thickness of 75μm and increased formability of about 31% compared to the single step stamping process. Such structures can be used in a plate-type heat exchanger requiring low weight and a compact shape

  9. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  10. Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

    2017-11-01

    Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

  11. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  12. Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Xihong, E-mail: xhhao@imust.edu.c [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhang, Zhiqing [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhou, Jing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); An, Shengli [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhai, Jiwei [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

    2010-07-09

    Both up and down compositionally graded (Pb{sub 1-x}Ba{sub x})ZrO{sub 3} (PBZ) thin films with increasing x from 0.4 to 0.6 were deposited on Pt(1 1 1)-buffer layered silicon substrates through a sol-gel method. The microstructure and dielectric properties of graded PBZ thin films were investigated systemically. X-ray diffraction patterns confirmed that both PBZ films had crystallized into a pure perovskite phase after annealed 700 {sup o}C. Electrical measurement results showed that although up graded films had a slightly larger tunability, dielectric loss of down graded films was much lower than that of up graded films. Therefore, the figure of merit of down graded PBZ films was greatly enhanced, as compared with up graded films. Moreover, down graded PBZ thin films also displayed excellent temperature stability with a smaller temperature coefficient of capacitance (TCC) of -0.59 x 10{sup -3} {sup o}C{sup -1} from 20 {sup o}C to 80 {sup o}C.

  13. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  14. A technology to improve formability for aluminum alloy thin-wall corrugated sheet component hydroforming

    Directory of Open Access Journals (Sweden)

    Lang Lihui

    2015-01-01

    Full Text Available The explosively forming projectile (EFP had been traditional adopted for the aluminum thin-walled corrugated sheet, whose deformation range is large but the formability is poor, and this process usually has problems of poor surface quality, long manufacturing cycle and high cost. The active hydroforming process was suggested to solve these issues during EFP. A new technology named as blank bulging by turning the upside down active hydroforming technology was proposed to overcome difficulties in non-uniform thickness distribution and cracking failure of corrugated sheet during the conventional hydroforming process. Both numerical simulations and experiments were conducted for this new technology. The result show that the deformation capacity of aluminum alloys can be improved effectively, and the more uniform distribution of wall thickness was obtained by this new method. It is conducted that the new method is universal for thin-walled, shallow drawing parts with complex section.

  15. Thin-Sheet zinc-coated and carbon steels laser welding

    International Nuclear Information System (INIS)

    Pecas, P.; Gouveia, H.; Quintino, L.

    1998-01-01

    This paper describes the results of a research on CO 2 laser welding of thin-sheet carbon steels (Zinc-coated and uncoated), at several thicknesses combinations. Laser welding has an high potential to be applied on sub-assemblies welding before forming to the automotive industry-tailored blanks. The welding process is studied through the analysis of parameters optimization, metallurgical quality and induced distortions by the welding process. The clamping system and the gas protection system developed are fully described. These systems allow the minimization of common thin-sheet laser welding defects like misalignment, and zinc-coated laser welding defects like porous and zinc ventilation. The laser welding quality is accessed by DIN 8563 standard, and by tensile, microhardness and corrosion test. (Author) 8 refs

  16. A very thin light sheet technique used to investigate meniscus shapes by laser induced fluorescence

    International Nuclear Information System (INIS)

    Khan, M.A.

    2003-01-01

    In this paper a light sheet technique is described to accurately (50 μm) measure meniscus profiles in film formation problems. The use of a slit to create the thin (0.1 mm) laser sheet makes the technique easy to implement, and allows tunable sheet thickness. The low light intensity obtained through the slit is compensated by the induced fluorescence of the tested fluid, which provides good picture contrast. After video recording through a microscope, the actual meniscus is recovered by image processing and proper calibration. The efficiency of the technique is demonstrated on a coating flow experiment. Due to its good accuracy and ease of use, this technique is expected to provide useful quantitative information about meniscus problems, in particular for the validation of computational fluid dynamics CFD solutions of coating flows. (author)

  17. Texture evolution in thin-sheets on AISI 301 metastable stainless steel under dynamic loading

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.Y. [Posco Steels, Pohan, South Korea (Korea, Republic of); Kozaczek, K. [Oak Ridge National Lab., TN (United States); Kulkarni, S.M. [TRW Vehicle Safety Systems, Mesa, AZ (United States); Bastias, P.C.; Hahn, G.T. [Vanderbilt Univ., Nashville, TN (United States)

    1995-05-08

    The evolution of texture in thin sheets of metastable austenitic stainless steel AISI 301 is affected by external conditions such as loading rate and temperature, by inhomogeneous deformation phenomena such as twinning and shear band formation, and by the concurent strain induced phase transformation of the retained austenitc ({gamma}) into martensite ({alpha}). The present paper describes texture measurements on different gauges of AISI 301 prior and after uniaxial stretching under different conditions.

  18. Diffusion-induced bending of thin sheet couples : theory and experiments in Ti-Zr system

    OpenAIRE

    Daruka, I.; Szabo, I.A.; Beke, D.L.; Cserhati, C.; Kodentsov, A.; Loo, van, F.J.J.

    1996-01-01

    Numerical and analytical calculations of concentration and stress distributions of thin-sheet diffusion couples have been carried out as well as the time dependence of the Kirkendall shift, xk, and the curvature has also been determined. It is shown that the concentration distribution is not sensitive to the boundary conditions (bent and planar, constrained, samples) and is influenced mainly by the feeding back effects of stresses (described by the stress term in the genealized diffusion pote...

  19. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  20. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  1. UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

    International Nuclear Information System (INIS)

    Abdel-Aziz, M.M.; Azim, Osama A.; Abdel-Wahab, L.A.; Seddik, Mohamed M.

    2006-01-01

    The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2 O 3 ), Hafnium dioxide (HfO 2 ), and Lima (mixture of oxides SiO 2 /Al 2 O 3 ); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A

  2. UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

    Science.gov (United States)

    Abdel-Aziz, M. M.; Azim, Osama A.; Abdel-Wahab, L. A.; Seddik, Mohamed M.

    2006-10-01

    The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2O 3), Hafnium dioxide (HfO 2), and Lima (mixture of oxides SiO 2/Al 2O 3); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A.

  3. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  4. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  5. Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se{sub 2} solar cells integration on stainless steel sheet

    Energy Technology Data Exchange (ETDEWEB)

    Amouzou, Dodji, E-mail: dodji.amouzou@fundp.ac.be [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium); Guaino, Philippe; Fourdrinier, Lionel; Richir, Jean-Baptiste; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles, 61, 5000 Namur (Belgium)

    2013-09-02

    For the fabrication of monolithically integrated flexible Cu(In, Ga)Se{sub 2}, CIGS modules on stainless steel, individual photovoltaic cells must be insulated from metal substrates by a barrier layer that can sustain high thermal treatments. In this work, a combination of sol–gel (organosilane-sol) and sputtered SiAlxOy forming thin diffusion barrier layers (TDBL) was prepared on stainless steel substrates. The deposition of organosilane-sol dielectric layers on the commercial stainless steel (maximal roughness, Rz = 500 nm and Root Mean Square roughness, RMS = 56 nm) induces a planarization of the surface (RMS = 16.4 nm, Rz = 176 nm). The DC leakage current through the dielectric layers was measured for the metal-insulator-metal (MIM) junctions that act as capacitors. This method allowed us to assess the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non-annealed and annealed samples based on sol–gel double layers. A yield of 100% was achieved for sol–gel double layers reinforced with a sputtered SiAlxOy coating and a third sol–gel monolayer. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could otherwise spoil the electronic and optical properties of CIGS photovoltaic cells. - Highlights: • We functionalize steel for monolithically integrated Cu(In,Ga)Se{sub 2} solar cells • Thin dielectric and diffusion barrier layers (TDDBL) prepared on steel • Reliability and breakdown voltage of dielectric layers have been studied. • Investigation of thermal treatment effect on dielectric

  6. Structural characterization and dielectric properties of BaTiO3 thin films obtained by spin coating

    Directory of Open Access Journals (Sweden)

    Branimir Bajac

    2014-12-01

    Full Text Available Barium titanate thin films were prepared by spin coating deposition technique of an acetic precursor sol and sintered at 750, 900 and 1050 °C. Phase composition of the obtained thin films was characterized by X-ray diffraction and Raman spectroscopy. Their morphology was analysed by scanning electron microscopy and atomic force microscopy. Dielectric properties of thin films sintered at 750 and 900 °C were characterized by LCD device, where the influence of sintering temperature on dielectric permittivity and loss tangent was inspected. It was concluded that higher sintering temperature increases grain size and amount of tetragonal phase, hence higher relative permittivity was recorded. The almost constant relative permittivity in the measured frequency (800 Hz–0.5 MHz and temperature (25–200 °C ranges as well as low dielectric loss are very important for the application of BaTiO3 films in microelectronic devices.

  7. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

    International Nuclear Information System (INIS)

    Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

    2012-01-01

    Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

  8. Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James [School of Physics, University of Hyderabad, Hyderabad, Telangana 500046 (India); Emani, Sivanagi Reddy [Advanced Center of Research in High Energy Materials (ACRHEM), School of Physics, University of Hyderabad, Telangana 500046 (India)

    2016-05-23

    Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

  9. SU-F-T-550: Radiochromic Plastic Thin Sheet Dosimeter: Initial Performance

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, K [London Regional Cancer Program, London, ON (United Kingdom); Adamovics, J [John Adamovics, Skillman, NJ (United States)

    2016-06-15

    Purpose: Thin sheets, of a high sensitivity formulation of radiochromic dosimeter, Presage were prepared and evaluated for optical readout. Methods: Sheets of radiochromic polyurethane, 12 cm long, 10 cm wide and 0.2 cm thick were prepared with leuco crystal violet as the reporter molecule. Sample transmission was evaluated at a wavelength of 590 nm with in-house constructed instruments: optical cone beam laser CT scanner, fixed and scanning spot densitometers. Sample sequential irradiations to a total dose of 40 Gy were conducted with a modified, Theratron 60, cobalt radiotherapy machine at dose rates of 1 or 0.25 Gy per minute. Exposure to ambient and readout light was minimized to limit background photochromic signals. Samples were stored at 4°C. Optical activity was assessed from linearly polarized transmission images. Comparison sensitivity measurements with EBT3 film were conducted. Results: Samples were transparent, smooth and pale purple before irradiation. Radiochromic reaction was completed in less than 5 minutes. A linear dose response with a sensitivity of 0.5 cm-1Gy-1 was observed. Micrometer measurements found sheet thickness variations up to 20%. Uniform dose, 2 Gy attenuation images, correlated with local sheet thicknesses. Comparable measurements with EBT3 film were 3 times more sensitive at 1 Gy but above 15 Gy, EBT3 film had lower sensitivity than 0.2 cm thick Presage sheet dosimeter due to its non-linear response. Conclusion: Dose sensitivity provided a 10% decrease in transmission for a 1 Gy dose. Improvements in mold design are expected to allow production of sheets with less than 5% variation in thickness. Above, 10 Gy, Presage sheet dosimeter performance expected to exceed EBT3 film based on linearity, sensitivity, transparency and smoothness of samples. J Adamovics is owner of Heuris Inc.

  10. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    Energy Technology Data Exchange (ETDEWEB)

    Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

    2014-02-28

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

  11. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    International Nuclear Information System (INIS)

    Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

    2014-01-01

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

  12. Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

    Science.gov (United States)

    Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

    2014-08-01

    Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

  13. Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

    Science.gov (United States)

    Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

    2015-01-14

    We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

  14. Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

    International Nuclear Information System (INIS)

    Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

    2009-01-01

    Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

  15. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  16. Compressive pre-stress effects on magnetostrictive behaviors of highly textured Galfenol and Alfenol thin sheets

    Directory of Open Access Journals (Sweden)

    Julia R. Downing

    2017-05-01

    Full Text Available Fe-Ga (Galfenol and Fe-Al (Alfenol are rare-earth-free magnetostrictive alloys with mechanical robustness and strong magnetoelastic coupling. Since highly textured Galfenol and Alfenol thin sheets along orientations have been developed with magnetostrictive performances of ∼270 ppm and ∼160 ppm, respectively, they have been of great interest in sensor and energy harvesting applications. In this work, we investigate stress-dependent magnetostrictive behaviors in highly textured rolled sheets of NbC-added Fe80Al20 and Fe81Ga19 alloys with a single (011 grain coverage of ∼90%. A compact fixture was designed and used to introduce a uniform compressive pre-stress to those thin sheet samples along a [100] direction. As compressive pre-stress was increased to above 100 MPa, the maximum observed magnetostriction increased 42% in parallel magnetostriction along the stress direction, λ//, in highly textured (011 Fe81Ga19 thin sheets for a compressive pre-stress of 60 MPa. The same phenomena were observed for (011 Fe80Al20 (maximum increase of 88% with a 49 MPa compressive stress. This trend is shown to be consistent with published results on the effect of pre-stress on magnetostriction in rods of single crystal and textured polycrystalline Fe-Ga alloy of similar compositions, and single crystal data gathered using our experimental set up. Interestingly, the saturating field (Hs does not vary with pre-stresses, while the saturating field in rod-shaped samples of Fe-Ga increases with an increase of pre-stress. This suggests that for a range of compressive pre-stresses, thin sheet samples have larger values of d33 transduction coefficients and susceptibility than rod-shaped samples of similar alloy compositions, and hence they should provide performance benefits when used in sensor and actuator device applications. Thus, we discuss potential reasons for the unexpected trends in Hs with pre-stress, and present preliminary results from tests conducted

  17. Elastic behavior and onset of cracking in cement composite plates reinforced by perforated thin steel sheets

    Science.gov (United States)

    Aronchik, V.

    1996-03-01

    Thin cement mortar plates reinforced by perforated thin steel sheets have been tested in four-point flexure loading. Six kinds of sheet reinforcement and to additional ones (for control) were used. Perforated sheets of the Daugavpils Factory of Machinery Chains differed by their thickness (0.6-1.8 mm), shape (round, rectangular, oval, "dumbbell"), and mark of steel (St. 08, 50, 70). Dimensions of plantes were 100×20×2 cm. Cements-sand mortar with a 1∶2 ratio of cement PZ35 and river sand of 3 mm grains was used as a matrix. Control specimens of similar dimensions and matrix were reinforced by wire cages and meshes (ferrocement). The testing was performed using an UMM-5 testing machine. Maximum deflection (at the midspan), tension, and shear strains were recorded. The expeimental data are presented in tables and graphs. The testing results showed that the elasticity modulus of material was in good agreement with the "admixture rule;" an onset of cracking for all types (excluding one) practically did not differ from reference samples; the mode of fracture in typical cases included an adhesion failure and significant shear strains. In one case the limit of the tension strength of the reinforcement was achieved.

  18. Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

    2010-02-01

    Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

  19. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    Science.gov (United States)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  20. Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

    2003-01-01

    ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

  1. Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

    Science.gov (United States)

    El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

    2018-02-01

    The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

  2. Buckling of thin viscous sheets with inhomogenous viscosity under extensional flows

    Science.gov (United States)

    Srinivasan, Siddarth; Wei, Zhiyan; Mahadevan, L.

    2016-11-01

    We investigate the dynamics, shape and stability of a thin viscous sheet subjected to an extensional flow under an imposed non-uniform temperature field. Using finite element simulations, we first solve for the stretching flow to determine the pre-buckling sheet thickness and in-plane flow velocities. Next, we use this solution as the base state and solve the linearized partial differential equation governing the out-of-plane deformation of the mid-surface as a function of two dimensionless operating parameters: the normalized stretching ratio α and a dimensionless width of the heating zone β. We show the sheet can become unstable via a buckling instability driven by the development of localized compressive stresses, and determine the global shape and growth rates of the most unstable mode. The growth rate is shown to exhibit a transition from stationary to oscillatory modes in region upstream of the heating zone. Finally, we investigate the effect of surface tension and present an operating diagram that indicates regions of the parameter space that minimizes or entirely suppresses the instability while achieving desired outlet sheet thickness. Therefore, our work is directly relevant to various industrial processes including the glass redraw & float-glass method.

  3. Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

    Science.gov (United States)

    Fan, Wei

    To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

  4. Characterisation of organic thin film coatings on automobile steel sheets by photothermal methods

    Energy Technology Data Exchange (ETDEWEB)

    Orth, T. [Salzgitter Mannesmann Forschung GmbH, Duisburg (Germany); Fluegge, W. [Salzgitter Mannesmann Forschung GmbH, Salzgitter (Germany); Gibkes, J. [Ruhr-Univ. Bochum (Germany). AG FestKoerperSpektroskopie

    2006-07-01

    In the nineties, the first generation of organic thin film coatings for corrosion protection of zinc-coated thin sheet steel have been introduced. The coating typically consists of a suspension of small zinc particles, embedded in a polymer matrix. In the scope of quality control, the characterisation of the resulting layer structure is of great interest, comprising not only a constant layer thickness and a local homogeneity of the coating, but also the depth distribution of the particles within the layer. Especially the latter parameter does have a direct influence on the spot weldability of the steel sheets. The present work shows, how photothermal methods like modulated infrared radiometry and photoacoustics can be used for a successful depth profiling of the thin film coatings. The sample surface is periodically heated using an intensitymodulated laser beam, and a thermal wave is induced in the layer system. By variation of the modulation frequency of the laser beam, the thermal diffusion length and, as a consequence, the penetration depth of the thermal wave can be adjusted. By a suitable evaluation of the amplitude and phase lag signals as a function of the modulation frequency, accurate depth profiling has been realized which can be used for a very reliable prediction of the welding properties of the product. In the first investigations, artificial samples with well defined extreme distributions of the particles have been analyzed, and in a second step, an evaluation strategy has been developed for real production samples. (orig.)

  5. Radiation and Internal Charging Environments for Thin Dielectrics in Interplanetary Space

    Science.gov (United States)

    Minow, Joseph I.; Parker, Linda Neergaard; Altstatt, Richard L.

    2004-01-01

    Spacecraft designs using solar sails for propulsion or thin membranes to shade instruments from the sun to achieve cryogenic operating temperatures are being considered for a number of missions in the next decades. A common feature of these designs are thin dielectric materials that will be exposed to the solar wind, solar energetic particle events, and the distant magnetotail plasma environments encountered by spacecraft in orbit about the Earth-Sun L2 point. This paper will discuss the relevant radiation and internal charging environments developed to support spacecraft design for both total dose radiation effects as well as dose rate dependent phenomenon, such as internal charging in the solar wind and distant magnetotail environments. We will describe the development of radiation and internal charging environment models based on nearly a complete solar cycle of Ulysses solar wind plasma measurements over a complete range of heliocentric latitudes and the early years of the Geotail mission where distant magnetotail plasma environments were sampled beyond X(sub GSE) = -100 Re to nearly L2 (X(sub GSE) -236 Re). Example applications of the environment models are shown to demonstrate the radiation and internal charging environments of thin materials exposed to the interplanetary space plasma environments.

  6. Unzip instabilities: Straight to oscillatory transitions in the cutting of thin polymer sheets

    Science.gov (United States)

    Reis, P. M.; Kumar, A.; Shattuck, M. D.; Roman, B.

    2008-06-01

    We report an experimental investigation of the cutting of a thin brittle polymer sheet with a blunt tool. It was recently shown that the fracture path becomes oscillatory when the tool is much wider than the sheet thickness. Here we uncover two novel transitions from straight to oscillatory fracture by varying either the tilt angle of the tool or the speed of cutting, respectively. We denote these by angle and speed unzip instabilities and analyze them by quantifying both the dynamics of the crack tip and the final shapes of the fracture paths. Moreover, for the speed unzip instability, the straight crack lip obtained at low speeds exhibits out-of-plane buckling undulations (as opposed to being flat above the instability threshold) suggesting a transition from ductile to brittle fracture.

  7. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  8. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  9. Kinetically controlled glass transition measurement of organic aerosol thin films using broadband dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2018-06-01

    Full Text Available Glass transitions from liquid to semi-solid and solid phase states have important implications for reactivity, growth, and cloud-forming (cloud condensation nuclei and ice nucleation capabilities of secondary organic aerosols (SOAs. The small size and relatively low mass concentration of SOAs in the atmosphere make it difficult to measure atmospheric SOA glass transitions using conventional methods. To circumvent these difficulties, we have adapted a new technique for measuring glass-forming properties of atmospherically relevant organic aerosols. Aerosol particles to be studied are deposited in the form of a thin film onto an interdigitated electrode (IDE using electrostatic precipitation. Dielectric spectroscopy provides dipole relaxation rates for organic aerosols as a function of temperature (373 to 233 K that are used to calculate the glass transition temperatures for several cooling or heating rates. IDE-enabled broadband dielectric spectroscopy (BDS was successfully used to measure the kinetically controlled glass transition temperatures of aerosols consisting of glycerol and four other compounds with selected cooling and heating rates. The glass transition results agree well with available literature data for these five compounds. The results indicate that the IDE-BDS method can provide accurate glass transition data for organic aerosols under atmospheric conditions. The BDS data obtained with the IDE-BDS technique can be used to characterize glass transitions for both simulated and ambient organic aerosols and to model their climate effects.

  10. In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

    Science.gov (United States)

    Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

    2005-08-01

    In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

  11. Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

    International Nuclear Information System (INIS)

    Guerfi, Y; Doucet, J B; Larrieu, G

    2015-01-01

    Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness. (paper)

  12. Status of Joining Thin Sheet and Thin Wall Tubes of 14YWT

    Energy Technology Data Exchange (ETDEWEB)

    Hoelzer, David T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Unocic, Kinga A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Tang, Wei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Feng, Zhili [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-18

    Beginning this fiscal year, the FCRD research project initiated an investigation on joining thin sections of the advanced ODS 14YWT ferritic alloy. Friction stir welding (FSW) was investigated as a method to join thin plate and tubing of 14YWT since it is a solid state joining method that has been shown in past studies to be a promising method for joining plates of ODS alloys, such as 14YWT. However, this study will attempt to be the first to demonstrate if FSW can successfully join thin plates and thin wall tubing of 14YWT. In the first FSW attempt, a 1.06 cm thick plate of 14YWT (SM13 heat) was successfully rolled at 1000ºC to the target thickness of 0.1 cm with no edge cracking. This achievement is a highlight since previous attempts to roll 14YWT plates have resulted in extensive cracking. For the FSW run, a pin tool being developed by the ORNL FSW Process Development effort was used. The first FSW run successfully produced a bead-on-plate weld in the 0.1 cm thick plate. The quality of the weld zone appears very good with no evidence of large defects such as cavities. The microstructural characterization study of the bead-on-plate weld zone has been initiated to compare the results of the microstructure analysis with those obtained in the reference microstructural analysis of the 14YWT (SM13 heat) that showed ultra-fine grain size of 0.43 μm and a high number density of ~2-5 nm sizes oxygen-enriched nanoclusters.

  13. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  14. Mutual Inductance Problem for a System Consisting of a Current Sheet and a Thin Metal Plate

    Science.gov (United States)

    Fulton, J. P.; Wincheski, B.; Nath, S.; Namkung, M.

    1993-01-01

    Rapid inspection of aircraft structures for flaws is of vital importance to the commercial and defense aircraft industry. In particular, inspecting thin aluminum structures for flaws is the focus of a large scale R&D effort in the nondestructive evaluation (NDE) community. Traditional eddy current methods used today are effective, but require long inspection times. New electromagnetic techniques which monitor the normal component of the magnetic field above a sample due to a sheet of current as the excitation, seem to be promising. This paper is an attempt to understand and analyze the magnetic field distribution due to a current sheet above an aluminum test sample. A simple theoretical model, coupled with a two dimensional finite element model (FEM) and experimental data will be presented in the next few sections. A current sheet above a conducting sample generates eddy currents in the material, while a sensor above the current sheet or in between the two plates monitors the normal component of the magnetic field. A rivet or a surface flaw near a rivet in an aircraft aluminum skin will disturb the magnetic field, which is imaged by the sensor. Initial results showed a strong dependence of the flaw induced normal magnetic field strength on the thickness and conductivity of the current-sheet that could not be accounted for by skin depth attenuation alone. It was believed that the eddy current imaging method explained the dependence of the thickness and conductivity of the flaw induced normal magnetic field. Further investigation, suggested the complexity associated with the mutual inductance of the system needed to be studied. The next section gives an analytical model to better understand the phenomenon.

  15. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Science.gov (United States)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  16. Enhancement of absorption in vertically-oriented graphene sheets growing on a thin copper layer

    Energy Technology Data Exchange (ETDEWEB)

    Rozouvan, Tamara; Poperenko, Leonid [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine); Kravets, Vasyl, E-mail: vasyl_kravets@yahoo.com [School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Shaykevich, Igor [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine)

    2017-02-28

    Highlights: • The optical properties and surface structure of graphene films. • Chemical vapour deposition method. • Scanning tunneling microscopy revealed vertical crystal lattice structure of graphene layer. • We report a significant enhancement of the absorption band in the vertically-oriented graphene sheets. - Abstract: The optical properties and surface structure of graphene films grown on thin copper Cu (1 μm) layer using chemical vapour deposition method were investigated via spectroscopic ellipsometry and nanoscopic measurements. Angle variable ellipsometry measurements were performed to analyze the features of dispersion of the complex refractive index and optical conductivity. It was observed significant enhancement of the absorption band in the vertically-oriented graphene sheets layer with respect to the bulk graphite due to interaction between excited localized surface plasmon at surface of thin Cu layer and graphene’s electrons. Scanning tunneling microscopy measurements with atomic spatial resolution revealed vertical crystal lattice structure of the deposited graphene layer. The obtained results provide direct evidence of the strong influence of the growing condition and morphology of nanostructure on electronic and optical behaviours of graphene film.

  17. Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets.

    Science.gov (United States)

    Gabriel, Tobias; Rommel, Daniel; Scherm, Florian; Gorywoda, Marek; Glatzel, Uwe

    2017-03-10

    Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co-28Cr-9W-1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE) study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM) and scanning electron microscopy (SEM), combined with electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDX). Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable.

  18. Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets

    Directory of Open Access Journals (Sweden)

    Tobias Gabriel

    2017-03-01

    Full Text Available Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co–28Cr–9W–1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM and scanning electron microscopy (SEM, combined with electron backscatter diffraction (EBSD and energy dispersive X-ray spectroscopy (EDX. Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable.

  19. Near-earth Thin Current Sheets and Birkeland Currents during Substorm Growth Phase

    International Nuclear Information System (INIS)

    Sorin Zaharia; Cheng, C.Z.

    2003-01-01

    Two important phenomena observed during the magnetospheric substorm growth phase are modeled: the formation of a near-Earth (|X| ∼ 9 R E ) thin cross-tail current sheet, as well as the equatorward shift of the ionospheric Birkeland currents. Our study is performed by solving the 3-D force-balance equation with realistic boundary conditions and pressure distributions. The results show a cross-tail current sheet with large current (J φ ∼ 10 nA/m 2 ) and very high plasma β (β ∼ 40) between 7 and 10 R E . The obtained region-1 and region-2 Birkeland currents, formed on closed field lines due to pressure gradients, move equatorward and become more intense (J parallel max ∼ 3 (micro)A/m 2 ) compared to quiet times. Both results are in agreement with substorm growth phase observations. Our results also predict that the cross-tail current sheet maps into the ionosphere in the transition region between the region-1 and region-2 currents

  20. Periodicity effects on compound waves guided by a thin metal slab sandwiched between two periodically nonhomogeneous dielectric materials

    Science.gov (United States)

    Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

    2017-10-01

    Surface-plasmon-polariton waves can be compounded when a sufficiently thin metal layer is sandwiched between two half spaces filled with dissimilar periodically nonhomogeneous dielectric materials. We solved the boundary-value problem for compound waves guided by a layer of a homogeneous and isotropic metal sandwiched between a structurally chiral material (SCM) and a periodically multilayered isotropic dielectric (PMLID) material. We found that the periodicities of the PMLID material and the SCM are crucial to excite a multiplicity of compound guided waves arising from strong coupling between the two interfaces.

  1. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  2. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  3. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  4. Using Microporous Polytetrafluoroethylene Thin Sheets as a Flexible Solar Diffuser to Minimize Sunlight Glint to Cameras in Space

    Science.gov (United States)

    Choi, Michael K.

    2016-01-01

    An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

  5. Using microporous polytetrafluoroethylene thin sheets as a flexible solar diffuser to minimize sunlight glint to cameras in space

    Science.gov (United States)

    Choi, Michael K.

    2016-09-01

    An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

  6. Mechanical characterization of auxetic stainless steel thin sheets with reentrant structure

    Science.gov (United States)

    Lekesiz, H.; Bhullar, S. K.; Karaca, A. A.; Jun, M. B. G.

    2017-08-01

    Smart materials in auxetic form present a great potential for various medical applications due to their unique deformation mechanisms along with durable infrastructure. Both analytical and finite element (FE) models are extensively used in literature to characterize mechanical response of auxetic structures but these structures are mostly thick enough to be considered as bulk material and 3D inherently. Auxetic plates in very thin form, a.e. foil, may bring numerous advantages such as very light design and better biodegradability when needed. However, there is a gap in literature on mechanical characterization of auxetic thin plates. In this study, structural analysis of very thin auxetic plates under uniaxial loading is investigated using both FE method and experimental method. 25 μm thick stainless steel (316L) plates are fabricated with reentrant texture for three different unit cell dimensions and tested under uniaxial loading using universal testing machine. 25 and 50 μm thick sheets with same cell dimensions were analyzed using implicit transient FE model including strain hardening and failure behaviors. FE results cover all the deformation schemes seen in actual tests and total deformation level matches with test results. Effect of plate thickness and cell geometry on auxetic behavior is discussed in detail using FE results. Finally, based on FE analysis results, an optimum geometry for prolonged auxetic behavior, high flexibility and high durability is suggested for future potential applications.

  7. Scanning thin-sheet laser imaging microscopy (sTSLIM) with structured illumination and HiLo background rejection.

    Science.gov (United States)

    Schröter, Tobias J; Johnson, Shane B; John, Kerstin; Santi, Peter A

    2012-01-01

    We report replacement of one side of a static illumination, dual sided, thin-sheet laser imaging microscope (TSLIM) with an intensity modulated laser scanner in order to implement structured illumination (SI) and HiLo image demodulation techniques for background rejection. The new system is equipped with one static and one scanned light-sheet and is called a scanning thin-sheet laser imaging microscope (sTSLIM). It is an optimized version of a light-sheet fluorescent microscope that is designed to image large specimens (HiLo image demodulation. The static light-sheet has a thickness of 3.2 µm; whereas, the scanned side has a light-sheet thickness of 4.2 µm. The scanned side images specimens with subcellular resolution (HiLo produce superior contrast compared to both the uniform static and scanned light-sheets. HiLo contrast was greater than SI and is faster and more robust than SI because as it produces images in two-thirds of the time and exhibits fewer intensity streaking artifacts. 2011 Optical Society of America

  8. Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

    Science.gov (United States)

    Zednik, Ricardo J.; McIntyre, Paul C.; Baniecki, John D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki

    2007-03-01

    We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20-575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie-von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.

  9. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  10. Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO2 substrate

    Directory of Open Access Journals (Sweden)

    A. Eršte

    2016-03-01

    Full Text Available We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE and polypropylene (PP, which are at present used in foil capacitors. Stable values of the dielectric constant ε′≈5 (being twice higher than in HDPE and PP over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.

  11. Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics.

    Science.gov (United States)

    Hutchins, Daniel O; Acton, Orb; Weidner, Tobias; Cernetic, Nathan; Baio, Joe E; Castner, David G; Ma, Hong; Jen, Alex K-Y

    2012-11-15

    Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO x (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10 -8 A cm -2 and capacitance density of 0.62 µF cm -2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm 2 V -1 s -1 .

  12. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  13. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-07-01

    Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  14. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  15. Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating

    International Nuclear Information System (INIS)

    Iyore, O.D.; Roodenko, K.; Winkler, P.S.; Noriega, J.R.; Vasselli, J.J.; Chabal, Y.J.; Gnade, B.E.

    2013-01-01

    We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors fabricated using standard semiconductor processing techniques. We characterize the capacitors using in-situ vibrational spectroscopy during thermally-assisted poling and correlate the Fourier transform infrared spectroscopy (FTIR) results with X-ray diffraction (XRD) results. FTIR analysis of the neat PVDF-HFP showed α → β transformations during poling at room temperature and at 55 °C. α → β transformations were observed for the crosslinked polymer only during poling at 55 °C. XRD data revealed that photo-crosslinking caused the polymer to partially crystallize into the β-phase. The similar behavior of the neat and crosslinked samples at 55 °C suggests that a higher activation energy was needed for α → β transformations in crosslinked PVDF-HFP during poling. Electrical measurements showed that photo-crosslinking had no significant effect on the dielectric constant and dielectric loss of PVDF-HFP. However, the dielectric strength and maximum energy density of the crosslinked polymer were severely reduced. - Highlights: • Polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) dielectrics were studied. • Phase transformations were observed only at 55 °C for the crosslinked PVDF-HFP. • Crosslinking had no strong effect on the dielectric constant of PVDF-HFP. • Breakdown strengths were 620 MVm −1 and 362 MVm −1 for neat and crosslinked films

  16. Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Iyore, O.D.; Roodenko, K.; Winkler, P.S. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Noriega, J.R.; Vasselli, J.J. [Electrical Engineering Department, The University of Texas at Tyler, Tyler, TX 75799 (United States); Chabal, Y.J. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B.E., E-mail: gnade@utdallas.edu [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States)

    2013-12-02

    We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors fabricated using standard semiconductor processing techniques. We characterize the capacitors using in-situ vibrational spectroscopy during thermally-assisted poling and correlate the Fourier transform infrared spectroscopy (FTIR) results with X-ray diffraction (XRD) results. FTIR analysis of the neat PVDF-HFP showed α → β transformations during poling at room temperature and at 55 °C. α → β transformations were observed for the crosslinked polymer only during poling at 55 °C. XRD data revealed that photo-crosslinking caused the polymer to partially crystallize into the β-phase. The similar behavior of the neat and crosslinked samples at 55 °C suggests that a higher activation energy was needed for α → β transformations in crosslinked PVDF-HFP during poling. Electrical measurements showed that photo-crosslinking had no significant effect on the dielectric constant and dielectric loss of PVDF-HFP. However, the dielectric strength and maximum energy density of the crosslinked polymer were severely reduced. - Highlights: • Polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) dielectrics were studied. • Phase transformations were observed only at 55 °C for the crosslinked PVDF-HFP. • Crosslinking had no strong effect on the dielectric constant of PVDF-HFP. • Breakdown strengths were 620 MVm{sup −1} and 362 MVm{sup −1} for neat and crosslinked films.

  17. Towards crack-free ablation cutting of thin glass sheets with picosecond pulsed lasers

    Science.gov (United States)

    Sun, Mingying; Eppelt, Urs; Hartmann, Claudia; Schulz, Wolfgang; Zhu, Jianqiang; Lin, Zunqi

    2017-08-01

    We investigated the morphology and mechanism of laser-induced damage in the ablation cutting of thin glass sheets with picosecond laser. Two kinds of damage morphologies observed on the cross-section of the cut channel, are caused by high-density free-electrons and the temperature accumulation, respectively. Notches and micro-cracks can be observed on the top surface of the sample near the cut edge. The surface micro-cracks were related to high energy free-electrons and also the heat-affected zone. Heat-affected-zone and visible-cracks free conditions of glass cutting were achieved by controlling the repetition rate and spatial overlap of laser pulses.

  18. Thin-Sheet Inversion Modeling of Geomagnetic Deep Sounding Data Using MCMC Algorithm

    Directory of Open Access Journals (Sweden)

    Hendra Grandis

    2013-01-01

    Full Text Available The geomagnetic deep sounding (GDS method is one of electromagnetic (EM methods in geophysics that allows the estimation of the subsurface electrical conductivity distribution. This paper presents the inversion modeling of GDS data employing Markov Chain Monte Carlo (MCMC algorithm to evaluate the marginal posterior probability of the model parameters. We used thin-sheet model to represent quasi-3D conductivity variations in the heterogeneous subsurface. The algorithm was applied to invert field GDS data from the zone covering an area that spans from eastern margin of the Bohemian Massif to the West Carpathians in Europe. Conductivity anomalies obtained from this study confirm the well-known large-scale tectonic setting of the area.

  19. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

    Directory of Open Access Journals (Sweden)

    Sebastian Koslowski

    2017-07-01

    Full Text Available With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111 and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111 results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111, as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS and their shapes can be resolved by spectroscopic mapping.

  20. Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

    Science.gov (United States)

    Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

    2017-01-01

    With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

  1. Research on Liquid Forming Process of Nickel Superalloys Thin Sheet Metals

    Directory of Open Access Journals (Sweden)

    Hyrcza-Michalska M.

    2017-12-01

    Full Text Available The paper presents the study of drawability of thin sheet metals made of a nickel superalloy Inconel type. The manufacturing process of axisymmetric cup – cone and a closed section profile in the form of a circular tube were designed and analyzed. In both cases, working fluid-oil was used in place of the rigid tools. The process of forming liquid is currently the only alternative method for obtaining complex shapes, coatings, and especially if we do it with high-strength materials. In the case of nickel superalloys the search for efficient methods to manufacture of the shaped shell is one of the most considerable problems in aircraft industry [1-5]. However, the automotive industries have the same problem with so-called advanced high-strength steels (AHSS. Due to this, both industrial problems have been examined and the emphasis have been put on the process of liquid forming (hydroforming. The study includes physical tests and the corresponding numerical simulations performed, using the software Eta/Dynaform 5.9. Numerical analysis of the qualitative and quantitative forecasting enables the formability of materials with complex and unusual characteristics of the mechanical properties and forming technology. It has been found that only the computer aided design based on physical and numerical modeling, makes efficient plastic processing possible using a method of hydroforming. Drawability evaluation based on the determination of the mechanical properties of complex characteristics is an indispensable element of this design in the best practice of industrial manufacturing products made of thin sheet metals.

  2. Preparation of a thin polysulfone phosphor sheet for the detection of alpha particles using adhesive process

    International Nuclear Information System (INIS)

    Seo, B. K.; Woo, Z. H.; Kim, G. H.; Chang, U. S.; Oh, W. Z.; Lee, K. W.; Han, M. J.

    2005-01-01

    According to atomic energy law and connection regs, the surface contamination of nuclear facilities should be monitored routinely. Surface contamination is divided into removable and fixed contamination. Fixed contamination is measured by a direct method with a survey meter. And removable contamination is measured by an indirect method using smear paper and a low background proportional counter. Also, in the decommissioning process of a nuclear research facilities, such as Korean Research Reactor 1 and 2 and Uranium Conversion Plant, a significant amount of nuclear wastes is produced. The wastes contaminated must be surveyed for the disposal and reuse in the future. In the previous study the medium, scintillatorembedded polymer membrane for detecting the alpharay, was prepared by impregnating organic scintillators in a membrane structure. The plastic scintillator consists of polysulfone(PSF) as a matrix with PPO as an organic scintillator and POPOP as a wave shifting agent dissolved in the matrix. But, an organic plastic scintillator was inadequate to detect the alpha particle in the alpha-beta mixing field because its light output is smaller than beta ray one. So, a thin phosphor sheet was prepared, which consisted of a very uniform deposit of silver activated zinc sulfide (ZnS(Ag)) phosphor applied to on side of clear polysulfone plastic sheet

  3. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  4. Dielectric properties of Li doped Li-Nb-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Perentzis, G.; Horopanitis, E.E.; Papadimitriou, L. [Aristotle University of Thessaloniki, Department of Physics, 54124 Thessaloniki (Greece); Durman, V.; Saly, V.; Packa, J. [Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava (Slovakia)

    2007-03-15

    Lithium niobate LiNbO{sub 3} was prepared as a thin film layered structure deposited on stainless steel substrate using e-gun evaporation. The Li doping was provided for by the formation of Li-Nb-O/Li/LiNb-O sandwich structure and annealing at about 250 C. AC impedance spectroscopy measurements were performed on the samples at temperatures from the interval between 28 and 165 C and in a frequency range of 10{sup -3} to 10{sup 6} Hz. Using the values Z' and Z'' at different frequencies, the dielectric parameters - parts of the complex permittivity {epsilon}' and {epsilon}'' and loss tangent tan {delta} were calculated. The results prove validity of the proposed equivalent circuit containing parallel RC elements connected in series where the first RC element represents the bulk of material and the second RC element belongs to the double layer at the metal interface. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  6. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  7. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  8. Effect of titanium oxide-polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Della Pelle, Andrea M. [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States); Maliakal, Ashok, E-mail: maliakal@lgsinnovations.com [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Sidorenko, Alexander [Department of Chemistry and Biochemistry, University of the Sciences, 600 South 43rd St., Philadelphia, PA 191034 (United States); Thayumanavan, S. [Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States)

    2012-07-31

    Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide-polystyrene core-shell nanocomposite (TiO{sub 2}-PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO{sub 2}-PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as {alpha}-sexithiophene ({alpha}-6T) (enhancement factor for field effect mobility ranging from 30-100 Multiplication-Sign higher on TiO{sub 2}-PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for {alpha}-sexithiophene ({alpha}-6T) grown by thermal evaporation on TiO{sub 2}-PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO{sub 2}-PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2 Multiplication-Sign ) increase in mobility with increasing TiO{sub 2}-PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation

  9. Effect of titanium oxide–polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

    International Nuclear Information System (INIS)

    Della Pelle, Andrea M.; Maliakal, Ashok; Sidorenko, Alexander; Thayumanavan, S.

    2012-01-01

    Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide–polystyrene core–shell nanocomposite (TiO 2 –PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO 2 –PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as α-sexithiophene (α-6T) (enhancement factor for field effect mobility ranging from 30-100× higher on TiO 2 –PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for α-sexithiophene (α-6T) grown by thermal evaporation on TiO 2 –PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO 2 –PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2×) increase in mobility with increasing TiO 2 –PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation rate produces organic polycrystalline films with small grain

  10. Material Behavior Based Hybrid Process for Sheet Draw-Forging Thin Walled Magnesium Alloys

    International Nuclear Information System (INIS)

    Sheng, Z.Q.; Shivpuri, R.

    2005-01-01

    Magnesium alloys are conventionally formed at the elevated temperatures. The thermally improved formability is sensitive to the temperature and strain rate. Due to limitations in forming speeds, tooling strength and narrow processing windows, complex thin walled parts cannot be made by traditional warm drawing or hot forging processes. A hybrid process, which is based on the deformation mechanism of magnesium alloys at the elevated temperature, is proposed that combines warm drawing and hot forging modes to produce an aggressive geometry at acceptable forming speed. The process parameters, such as temperatures, forming speeds etc. are determined by the FEM modeling and simulation. Sensitivity analysis under the constraint of forming limits of Mg alloy sheet material and strength of tooling material is carried out. The proposed approach is demonstrated on a conical geometry with thin walls and with bottom features. Results show that designed geometry can be formed in about 8 seconds, this cannot be formed by conventional forging while around 1000s is required for warm drawing. This process is being further investigated through controlled experiments

  11. Impedance spectroscopic and dielectric analysis of Ba0.7Sr0.3TiO3 thin films

    International Nuclear Information System (INIS)

    Rouahi, A.; Kahouli, A.; Sylvestre, A.; Defaÿ, E.; Yangui, B.

    2012-01-01

    Highlights: ► The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba 0.7 Sr 0.3 TiO 3 . ► The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. ► The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. ► The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba 0.7 Sr 0.3 TiO 3 thin film with Pt/BST/Pt/TiO 2 /SiO 2 structure was prepared by ion beam sputtering. The film was post annealed at 700 °C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1–10 5 Hz] at different temperatures [175–350 °C]. The Nyquist plots (Z″ vs . Z′) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z″ and M″ are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M ″ /M ″ max shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

  12. Controlled bending and folding of a bilayer structure consisting of a thin stiff film and a heat shrinkable polymer sheet

    Science.gov (United States)

    Cui, Jianxun; Adams, John G. M.; Zhu, Yong

    2018-05-01

    Bending pre-designed flat sheets into three-dimensional (3D) structures is attracting much interest, as it provides a simple approach to make 3D devices. Here we report controlled bending and folding of a bilayer structure consisting of a heat shrinkable polymer sheet and a thin stiff film (not thermally responsive). Upon heating, the prestrained polymer sheet shrinks, leading to bending or folding of the bilayer. We studied the effect of relative dimensions of the two layers on the bending behavior and demonstrated the transition from longitudinal bending to transverse bending of the bilayer strip. Transverse bending was utilized to fold origami structures, including several flat letters, a crane, and a corrugated metal sheet via Miura-ori folding. We developed a method to further control the bending orientation based on bio-inspired anisotropic bending stiffness. By bending the metal foil in different orientations, several structures were obtained, including cylindrical surfaces and left-handed/right-handed helical structures.

  13. Mechanical property changes in porous low-k dielectric thin films during processing

    Energy Technology Data Exchange (ETDEWEB)

    Stan, G., E-mail: gheorghe.stan@nist.gov; Gates, R. S. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kavuri, P. [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-10-13

    The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

  14. Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

    Science.gov (United States)

    Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

    2008-05-01

    Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

  15. Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Hutchins, Daniel O.; Acton, Orb [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Weidner, Tobias [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Cernetic, Nathan [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Baio, Joe E. [Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Castner, David G. [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Ma, Hong, E-mail: hma@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Jen, Alex K.-Y., E-mail: ajen@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemistry, University of Washington, Seattle, WA 98195 (United States)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Rapid processing of SAM in ambient conditions is achieved by spin coating. Black-Right-Pointing-Pointer Thermal annealing of a bulk spun-cast molecular film is explored as a mechanism for SAM densification. Black-Right-Pointing-Pointer High-performance SAM-oxide hybrid dielectric is obtained utilizing a single wet processing step. - Abstract: Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO{sub x} (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7 Multiplication-Sign 10{sup -8} A cm{sup -2} and capacitance density of 0.62 {mu}F cm{sup -2} at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to

  16. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  17. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

    2010-01-01

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  18. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  19. Growth and characteristics of PbS/polyvinyl alcohol nanocomposites for flexible high dielectric thin film applications

    International Nuclear Information System (INIS)

    Hmar, J.J.L.; Majumder, T.; Mondal, S.P.

    2016-01-01

    PbS/polyvinyl alcohol (PbS/PVA) nanocomposites have been grown by a chemical bath deposition process at various growth temperatures (60–100 °C). Transmission electron microscopy (TEM) study revealed the formation of PbS nanoparticles of diameter 6–20 nm encapsulated in PVA matrix. Optical band gap of the nanocomposite films have been found to decrease (1.45 eV–0.67 eV) with increase in growth temperature from 60 °C to 100 °C. The impedance measurements have been carried out by depositing the PbS/PVA films on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates. The room temperature dielectric permittivity and ac conductivity measurements have been carried out for ITO/PbS/PVA/Al devices deposited at various growth temperatures. The nanocomposite films demonstrate superior dielectric permittivity compare to pure PVA polymer. The flexibility studies of ITO/PbS/PVA/Al devices have been performed at different bending angles. - Highlights: • PbS nanoparticles of diameter 6–20 nm were grown in polyvinyl (PVA) matrix. • Optical band gap of nanocomposite films was varied from 1.45–0.67 eV. • The nanocomposite thin films demonstrated superior dielectric permittivity. • Flexibility study of thin film devices was performed at various bending angles.

  20. Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

    1996-01-01

    Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

  1. Thin-sheet zinc-coated and carbon steels laser welding

    Directory of Open Access Journals (Sweden)

    Peças, P.

    1998-04-01

    Full Text Available This paper describes the results of a research on CO2 laser welding of thin-sheet carbon steels (zinccoated and uncoated, at several thicknesses combinations. Laser welding has an high potential to be applied on sub-assemblies welding before forming to the automotive industry-tailored blanks. The welding process is studied through the analysis of parameters optimization, metallurgical quality and induced distortions by the welding process. The clamping system and the gas protection system developed are fully described. These systems allow the minimization of common thin-sheet laser welding defects like misalignement, and zinc-coated laser welding defects like porous and zinc volatilization. The laser welding quality is accessed by DIN 8563 standard, and by tensile, microhardness and corrosion tests.

    Este artigo descreve os resultados da investigação da soldadura laser de CO2 de chapa fina de acó carbono (simples e galvanizado, em diferentes combinações de espessura. A soldadura laser é um processo de elevado potencial no fabrico de tailored-blanks (sub-conjuntos para posterior enformação, constituidos por varias partes de diferentes materiais e espessuras para a indústria automóvel. São analisados os aspectos de optimização paramétrica, de qualidade metalúrgica da junta soldada e das deformações resultantes da soldadura. São descritos os mecanismos desenvolvidos de fixação das chapas e protecção gasosa, por forma a minimizar os defeitos típicos na soldadura laser de chapa fina como o desalinhamento e da soldadura laser de chapa galvanizada como os poros e a volatilização do zinco. Por fim apresentam-se resultados da avaliação da qualidade da soldadura do ponto de vista qualitativo através da norma DIN 8563, e do pontos de vista quantitativo através de ensaios de tracção, dureza e corrosão.

  2. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

    2016-01-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  3. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  4. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  5. Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi

    2001-01-01

    The effect of interfacial layers on the dielectric properties in very thin SrBi 2 Ta 2 O 9 (SBT) capacitors has been investigated using static measurements. Total permittivity (ε t ) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The contribution of the interfacial capacitance (C int ) and bulk capacitance to the total capacitance indicates that C int of the Ir/SBT/Pt structure was lower than that of the Pt/SBT/Pt structure, while the bulk permittivity (ε b ) was essentially the same. The dispersion of all capacitors followed the power law, while the Ir/SBT/Pt capacitor showed a larger dispersion of C int . These results suggest that the Pt/SBT/Pt capacitor is preferred for obtaining the high performance with less effect of the interfacial layers on the dielectric properties. [copyright] 2001 American Institute of Physics

  6. Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

    Science.gov (United States)

    Singh, Subhash; Mohapatra, Y. N.

    2017-06-01

    We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

  7. Experimental determination of spring back and thinning effect of aluminum sheet metal during L-bending operation

    International Nuclear Information System (INIS)

    Dilip Kumar, K.; Appukuttan, K.K.; Neelakantha, V.L.; Naik, Padmayya S.

    2014-01-01

    Highlights: • The spring back and thinning effect during L-bending was determined on aluminum sheet. • Beyond a particular clearance, the above said effects are linearly increasing. • Below the critical clearance scratches will occur on the surface due to wear. • As the clearance reduces, the wear rate increases on the punching surface. - Abstract: In automotive industry, significant efforts are being put forth to replace steel sheets with aluminum sheets for various applications. Besides its higher cost, there are several technical hurdles for wide usage of aluminum sheets in forming. Major problems in aluminum sheet metal forming operations are deformation errors and spring back effect. These problems are dependent on the number of parameters such as die and tool geometry, friction condition, loading condition and anisotropic properties of the metal. To predict the exact shape, the geometry based punch contact program must be used. The shape changes once the punch is withdrawn, because of the materials elasticity. Prediction of such a spring back effect is a major challenging problem in industry involving sheet metal forming operations. It also needs applying appropriate back tension during the forming complex shapes. Slight deformation of the metal leads to non-axisymmetric loading. One can predict the residual stress by determining plastic and elastic deformation. Thus appropriate spring back effect can be investigated. The present investigation was carried out to determine the spring back and thinning effect of aluminum sheet metal during L-bending operation. Number of specimens with thickness varying from 0.5 mm to 3.5 mm were prepared. The experiments were conducted for different clearances between punch and die. It is observed that, beyond a particular clearance for each thickness of the sheet metal, the spring back and thinning effects were linearly increasing. However, below the critical clearance, scratches on the surface of the sheet metal were

  8. Fabrication of conducting composite sheets using cost-effective graphite flakes and amorphous styrene acrylonitrile for enhanced thermistor, dielectric, and electromagnetic interference shielding properties

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, Varij, E-mail: varijpanwarcertain@gmail.com [Electronics and Communication Engineering, Graphic Era University, Dehradun, Uttarakhand (India); Gill, Fateh Singh; Rathi, Vikas; Tewari, V.K. [Electronics and Communication Engineering, Graphic Era University, Dehradun, Uttarakhand (India); Mehra, R.M. [Sharda University, Greater Noida (India); Park, Jong-Oh, E-mail: jop@jnu.ac.kr [School of Mechanical Engineering, Chonnam National University, Gwangju (Korea, Republic of); Park, Sukho, E-mail: shpark12@dgist.ac.kr [Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of)

    2017-06-01

    The fabrication of strong conducting composite sheets (CCSs) using a simple technique with cost-effective materials is desirable for capacitor, decoupling capacitor, and electromagnetic interference (EMI) shielding applications. Here, we used cost-effective graphite flakes (GFs) as a conducting filler and amorphous poly (styrene-co-acrylonitrile) (PSAN) as an insulating polymer to fabricate a CCS via a simple mechanical mixing and hot compression molding process in 2.5 h, with the aim to save time and avoid the use of toxic reagents, which are generally used in chemical methods. In the present method, the GFs are connected in diffusively adhere polymer matrix, controlled by temperature and pressure that generate the conduction in the CCSs. The resulting PSAN/GF CCSs were characterized by using scanning electron microscopy (SEM), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and hardness tests. The GFs penetrated the interfacial region of PSAN, thus improving the thermistor and dielectric properties (dielectric constant, AC conductivity, and dissipation factor) of the PSAN/GF CCSs. Furthermore, the PSAN/GF CCSs showed enhanced hardness and EMI shielding effectiveness (SE) properties in the X-band frequency range (8.5–12.5 GHz). The percolation theory was implemented to DC and AC conductivity. To detect the transition of the dielectric properties, the dielectric constant of the CCSs was analyzed with increasing volume fraction of GFs in the radio frequency region. The improved dielectric constant, AC conductivity, and dissipation factor of the PSAN/GF CCS, indicated a significant improvement in their EMI shielding properties in the X-band frequency range, which were measured using the waveguide method. The ac conductivity of PSAN/GF CCS shows stable behavior in the higher frequency ranges. The EMISE of PSAN/GF CCS were found to increase with increasing GF content due to the absorbance mechanism. - Highlights: • Enhanced hardness and

  9. Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Egginger

    2012-12-01

    Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

  10. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in Zn

  11. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    Science.gov (United States)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  12. Sodium chloride crystallization from thin liquid sheets, thick layers, and sessile drops in microgravity

    Science.gov (United States)

    Fontana, Pietro; Pettit, Donald; Cristoforetti, Samantha

    2015-10-01

    Crystallization from aqueous sodium chloride solutions as thin liquid sheets, 0.2-0.7 mm thick, with two free surfaces supported by a wire frame, thick liquid layers, 4-6 mm thick, with two free surfaces supported by metal frame, and hemispherical sessile drops, 20-32 mm diameter, supported by a flat polycarbonate surface or an initially flat gelatin film, were carried out under microgravity on the International Space Station (ISS). Different crystal morphologies resulted based on the fluid geometry: tabular hoppers, hopper cubes, circular [111]-oriented crystals, and dendrites. The addition of polyethylene glycol (PEG-3350) inhibited the hopper growth resulting in flat-faced surfaces. In sessile drops, 1-4 mm tabular hopper crystals formed on the free surface and moved to the fixed contact line at the support (polycarbonate or gelatin) self-assembling into a shell. Ring formation created by sessile drop evaporation to dryness was observed but with crystals 100 times larger than particles in terrestrially formed coffee rings. No hopper pyramids formed. By choosing solution geometries offered by microgravity, we found it was possible to selectively grow crystals of preferred morphologies.

  13. Manufacture of thin-walled clad tubes by pressure welding of roll bonded sheets

    Science.gov (United States)

    Schmidt, Hans Christian; Grydin, Olexandr; Stolbchenko, Mykhailo; Homberg, Werner; Schaper, Mirko

    2017-10-01

    Clad tubes are commonly manufactured by fusion welding of roll bonded metal sheets or, mechanically, by hydroforming. In this work, a new approach towards the manufacture of thin-walled tubes with an outer diameter to wall thickness ratio of about 12 is investigated, involving the pressure welding of hot roll bonded aluminium-steel strips. By preparing non-welded edges during the roll bonding process, the strips can be zip-folded and (cold) pressure welded together. This process routine could be used to manufacture clad tubes in a continuous process. In order to investigate the process, sample tube sections with a wall thickness of 2.1 mm were manufactured by U-and O-bending from hot roll bonded aluminium-stainless steel strips. The forming and welding were carried out in a temperature range between RT and 400°C. It was found that, with the given geometry, a pressure weld is established at temperatures starting above 100°C. The tensile tests yield a maximum bond strength at 340°C. Micrograph images show a consistent weld of the aluminium layer over the whole tube section.

  14. Titanium Alloys Thin Sheet Welding with the Use of Concentrated Solar Energy

    Science.gov (United States)

    Pantelis, D. I.; Kazasidis, M.; Karakizis, P. N.

    2017-12-01

    The present study deals with the welding of titanium alloys thin sheets 1.3 mm thick, with the use of concentrated solar energy. The experimental part of the work took place at a medium size solar furnace at the installation of the Centre National de la Recherche Scientifique, at Odeillo, in Southern France, where similar and dissimilar defect-free welds of titanium Grades 4 and 6 were achieved, in the butt joint configuration. After the determination of the appropriate welding conditions, the optimum welded structures were examined and characterized microstructurally, by means of light optical microscopy, scanning electron microscopy, and microhardness testing. In addition, test pieces extracted from the weldments were tested under uniaxial tensile loading aiming to the estimation of the strength and the ductility of the joint. The analysis of the experimental results and the recorded data led to the basic concluding remarks which demonstrate increased hardness distribution inside the fusion area and severe loss of ductility, but adequate yield and tensile strength of the welds.

  15. Modelling geomagnetically induced currents in midlatitude Central Europe using a thin-sheet approach

    Science.gov (United States)

    Bailey, Rachel L.; Halbedl, Thomas S.; Schattauer, Ingrid; Römer, Alexander; Achleitner, Georg; Beggan, Ciaran D.; Wesztergom, Viktor; Egli, Ramon; Leonhardt, Roman

    2017-06-01

    Geomagnetically induced currents (GICs) in power systems, which can lead to transformer damage over the short and the long term, are a result of space weather events and geomagnetic variations. For a long time, only high-latitude areas were considered to be at risk from these currents, but recent studies show that considerable GICs also appear in midlatitude and equatorial countries. In this paper, we present initial results from a GIC model using a thin-sheet approach with detailed surface and subsurface conductivity models to compute the induced geoelectric field. The results are compared to measurements of direct currents in a transformer neutral and show very good agreement for short-period variations such as geomagnetic storms. Long-period signals such as quiet-day diurnal variations are not represented accurately, and we examine the cause of this misfit. The modelling of GICs from regionally varying geoelectric fields is discussed and shown to be an important factor contributing to overall model accuracy. We demonstrate that the Austrian power grid is susceptible to large GICs in the range of tens of amperes, particularly from strong geomagnetic variations in the east-west direction.

  16. Holey nickel-cobalt layered double hydroxide thin sheets with ultrahigh areal capacitance

    Science.gov (United States)

    Zhi, Lei; Zhang, Wenliang; Dang, Liqin; Sun, Jie; Shi, Feng; Xu, Hua; Liu, Zonghuai; Lei, Zhibin

    2018-05-01

    Strong coupling of electroactive components on conductive carbonaceous matrix to fabricate flexible hybrid electrodes represents a promising approach towards high performance supercapacitors. This work reports the fabrication of holey nickel cobalt layered double hydroxide (NiCo-LDH) nanosheets that are vertically grown on the cotton cloth-derived activated textile carbon (aTC). The abundant nanoholes on the thin-sheet NiCo-LDH not only enhance the electrode efficiency for efficient Faradaic redox reactions but also facilitate access of electrolyte to the electrode surface, thus giving rise to 70% capacitance arising from their outer surface. As a result, the aTC-NiCo hybrid electrode is capable of simultaneously achieving extremely high areal capacitance (6.37 F cm-2), mass capacitance (525 F g-1) and volumetric capacitance (249 F cm-3) at a practical level of mass loading (6.72 mg cm-2). Moreover, a solid-state asymmetric capacitor built with aTC-NiCo as positive electrode and active carbon-coated on aTC as negative electrode can deliver a volumetric energy density of 7.4 mWh cm-3 at a power density of 103 mW cm-3, while preserving a superior power performance, satisfying cycling stability and good mechanical flexibility.

  17. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  18. Opposed-Flow Flame Spread in a Narrow Channel Apparatus over Thin PMMA Sheets

    Science.gov (United States)

    Bornand, G. R.; Olson, Sandra L.; Miller, F. J.; Pepper, J. M.; Wichman, I. S.

    2013-01-01

    that at 1 atm pressure, the SDSU NCA successfully simulates microgravity for not only thin cellulose fuels, but also for thin PMMA sheets as well. This further supports the idea that the NCA is a viable option to complement or replace NASA's Test 1 for material flammability testing. Tests with thick fuels will be conducted in the future to further characterize the SDSU NCA.

  19. Microstructural evolution in warm-rolled and cold-rolled strip cast 6.5 wt% Si steel thin sheets and its influence on magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xianglong, E-mail: 215454278@qq.com; Liu, Zhenyu, E-mail: zyliu@mail.neu.edu.cn; Li, Haoze; Wang, Guodong

    2017-07-01

    Highlights: • The experimental materials used in the study are based on strip casting. • Magnetic properties between warm rolled and cold rolled sheets are investigated. • Cold rolled 6.5% Si sheet has better magnetic properties than warm rolled sheet. • The γ and λ-fiber recrystallization textures can be optimized after cold rolling. • Cold rolling should be more suitable for fabricating 6.5% Si steel thin sheets. - Abstract: 6.5 wt% Si steel thin sheets were usually fabricated by warm rolling. In our previous work, 6.5 wt% Si steel thin sheets with good magnetic properties had been successfully fabricated by cold rolling based on strip casting. In the present work, the main purposes were to find out the influences of warm rolling and cold rolling on microstructures and magnetic properties of the thin sheets with the thickness of 0.2 mm, and to confirm which rolling method was more suitable for fabricating 6.5 wt% Si steel thin sheets. The results showed that the cold rolled sheet could obtain good surface quality and flatness, while the warm rolled sheet could not. The intensity of γ-fiber rolling texture (<1 1 1>//ND) of cold rolled specimen was weaker than that of the warm rolled specimen, especially for the {1 1 1}<1 1 2> component at surface layer and {1 1 1}<1 1 0> component at center layer. After the same annealing treatment, the cold rolled specimen, which had higher stored energy and weaker intensity of γ-fiber rolling texture, could obtain smaller recrystallization grain size, weaker intensity of γ-fiber recrystallization texture and stronger intensity of λ-fiber recrystallization texture. Therefore, due to the good surface quality, smaller recrystallization grain size and optimum recrystallization texture, the cold rolled specimen possessed improved magnetic properties, and cold rolling should be more suitable for fabricating 6.5 wt% Si steel thin sheets.

  20. Thin liquid sheet target capabilities for ultra-intense laser acceleration of ions at a kHz repetition rate

    Science.gov (United States)

    Klim, Adam; Morrison, J.; Orban, C.; Chowdhury, E.; Frische, K.; Feister, S.; Roquemore, M.

    2017-10-01

    The success of laser-accelerated ion experiments depends crucially on a number of factors including how thin the targets can be created. We present experimental results demonstrating extremely thin (under 200 nm) glycol sheet targets that can be used for ultra-intense laser-accelerated ion experiments conducted at the Air Force Research Laboratory at Wright-Patterson Air Force Base. Importantly, these experiments operate at a kHz repetition rate and the recovery time of the liquid targets is fast enough to allow the laser to interact with a refreshed, thin target on every shot. These thin targets can be used to produce energetic electrons, light ions, and neutrons as well as x-rays, we present results from liquid glycol targets which are useful for proton acceleration experiments via the mechanism of Target Normal Sheath Acceleration (TNSA). In future work, we will create thin sheets from deuterated water in order to perform laser-accelerated deuteron experiments. This research was sponsored by the Quantum and Non-Equilibrium Processes Division of the AFOSR, under the management of Dr. Enrique Parra, and support from the DOD HPCMP Internship Program.

  1. Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

    2017-05-15

    Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

  2. Effects of die quench forming on sheet thinning and 3-point bend testing of AA7075-T6

    Science.gov (United States)

    Kim, Samuel; Omer, Kaab; Rahmaan, Taamjeed; Butcher, Clifford; Worswick, Michael

    2017-10-01

    Lab-scaled AA7075 aluminum side impact beams were manufactured using the die quenching technique in which the sheet was solutionized and then quenched in-die during forming to a super saturated solid state. Sheet thinning measurements were taken at various locations throughout the length of the part and the effect of lubricant on surface scoring and material pick-up on the die was evaluated. The as-formed beams were subjected to a T6 aging treatment and then tested in three-point bending. Simulations were performed of the forming and mechanical testing experiments using the LS-DYNA finite element code. The thinning and mechanical response was predicted well.

  3. Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

    Science.gov (United States)

    Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

    2013-01-01

    Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

  4. Size effects on structural and dielectric properties of PZT thin films at compositions around the morpho tropic phase boundary

    International Nuclear Information System (INIS)

    Lima, Elton Carvalho; Araujo, Eudes Borges; Souza Filho, Antonio Gomes de; Bdikin, Igor

    2011-01-01

    Full text: The demand for portability in consumer electronics has motivated the understanding of size effects on ferroelectric thin films. The actual comprehension of these effects in ferroelectrics is unsatisfactory, since the polarization interacts more strongly than other order parameters such as strain and charge. As a result, extrinsic effects are produced if these variables are uncontrolled and problems such as ferroelectric paraelectric phase transition at nanometers scale remains an unsolved issue. In the present work, the effects of thickness and compositional fractions on the structural and dielectric properties of PbZr 1-x Ti x O 3 (PZT) thin films were studied at a composition around the morphotropic phase boundary (x = 0.50). For this purpose, thin films with different thicknesses and different PbO excess were deposited on Si(100) and Pt=T iO 2 =SiO 2 =Si substrates by a chemical method and crystallized in electric furnace at 700 deg C for 1 hour. The effects of substrate, pyrolysis temperature and excess lead addition in the films are reported. For films with 10 mol% PbO in excess, the pyrolysis in the regime of 300 deg C for 30 minutes was observed to yield PZT pyrochlore free thin films deposited on Pt=T iO 2 =SiO 2 =Si substrate. Out this condition, the transformation from amorphous to the pyrochlore metastable phase is kinetically more favorable that a transformation to the perovskite phase, which is thermodynamically stable. Rietveld refinements based on X-ray diffraction results showed that films present a purely tetragonal phase and that this phase does not change when the film thickness decreases. The dielectric permittivity measurements showed a monoclinic → tetragonal phase transition at 198K. Results showed that the dielectric permittivity (ε) increases continuously from 257 to 463, while the thickness of the PZT films increases from 200 to 710 nm. These results suggests that interface pinning centers can be the responsible mechanism by

  5. Kinetic instabilities of thin current sheets: Results of two-and-one-half-dimensional Vlasov code simulations

    International Nuclear Information System (INIS)

    Silin, I.; Buechner, J.

    2003-01-01

    Nonlinear triggering of the instability of thin current sheets is investigated by two-and-one-half- dimensional Vlasov code simulations. A global drift-resonant instability (DRI) is found, which results from the lower-hybrid-drift waves penetrating from the current sheet edges to the center where they resonantly interact with unmagnetized ions. This resonant nonlinear instability grows faster than a Kelvin-Helmholtz instability obtained in previous studies. The DRI is either asymmetric or symmetric mode or a combination of the two, depending on the relative phase of the lower-hybrid-drift waves at the edges of the current sheet. With increasing particle mass ratio the wavenumber of the fastest-growing mode increases as kL z ∼(m i /m e ) 1/2 /2 and the growth rate of the DRI saturates at a finite level

  6. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    Neamen, D.; Shedd, W.; Buchanan, B.

    1975-01-01

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  7. Structural, dielectric and a.c. conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    X-ray diffraction; a.c. conductivity; dielectric properties; complex electric modulus. ... the study disordered systems because of the unusual temper- ..... energy. tunnelling model suggested by Wang et al [31], (s) should decrease with increase in ...

  8. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  9. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret

    2017-05-03

    There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

  10. Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

    Science.gov (United States)

    Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-03-01

    We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

  11. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  12. Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

    2012-01-31

    Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

  13. Spontaneous formation of stringlike clusters and smectic sheets for colloidal rods confined in thin wedgelike gaps.

    Science.gov (United States)

    Maeda, Hideatsu; Maeda, Yoshiko

    2013-08-20

    Monodispersed colloidal rods of β-FeOOH with sizes ranging from 270 to 580 nm in length and 50 to 80 nm in width were synthesized. Narrow wedgelike gaps (0 to 700 nm in height) were formed around the inner bottom edge of the suspension glass cells. Optical microscopic observations revealed the formation of stringlike clusters of the rods and smectic sheets (by spontaneous side-by-side clustering of the strings) in the isotropic phase of the rod suspensions confined in narrow gaps; the electrolyte (HCl) concentrations of the suspensions are 5-40 mM, at which inter-rod interactions are attractive. The strings exhibit different colors that were used to investigate the structures of the strings with the help of interference color theory for thin films. The results are as follows. (1) The rods, lying flat on the gap bottom, are connected side-by-side and stacked upward to form stringlike clusters with different thicknesses depending on the gap height. (2) The stacking numbers (N(sr)) of the rods are estimated to be 1-5. With N(sr) increasing from 2 to 5, the volume fractions (ϕ) of the rods in the strings increased typically from 0.25-0.3 to 0.35-0.42 to reach limiting values (close to the ϕ values of the rods in the bulk smectic phase). (3) Unexpected low-ϕ strings are found in regions with an intermediate height in the gaps. These behaviors of ϕ may be caused by thermal fluctuations of the strings.

  14. Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

    International Nuclear Information System (INIS)

    Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

    2010-01-01

    Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

  15. Analysis of transmittance properties in 1D hybrid dielectric photonic crystal containing superconducting thin films

    Science.gov (United States)

    Soltani, Osswa; Zaghdoudi, Jihene; Kanzari, Mounir

    2018-06-01

    By means of two fluid model and transfer matrix method (TMM), we investigate theoretically the transmittance properties of a defective hybrid dielectric-dielectric photonic crystal that contains a superconducting material as a defect layer. The considered hybrid photonic structure is: H(LH) 7(HLSLH) P H(LH) 7 , where H is the high refractive index dielectric, L is the low refractive index dielectric, S is the superconducting material and P is the repetitive number. The results show that the variation of the number and the positions of the transmissions modes depend strongly on the repetitive number P, the temperature T and the thickness of the layer S. An improvement of the spectral response is obtained with the exponential gradation of layer thicknesses dj =d0 + βejα , where d0 is the initial thickness of the layer j, α and β are two particular constants for each material. In addition, the effect of the incident angle for both transverse electric (TE) and transverse magnetic (TM) polarizations on the transmittance spectrum is discussed. As a result, we propose a tunable narrow stop-band polychromatic filter that covers the visible wavelength.

  16. Organic thin film transistors with polymer brush gate dielectrics synthesized by atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Pinto, J.C.; Whiting, G.L.; Khodabakhsh, S.

    2008-01-01

    , synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3-hexylthiophene). The semiconductor-dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy...

  17. Cutting thin sheets of allyl diglycol carbonate (CR-39) with a CW CO2, laser

    International Nuclear Information System (INIS)

    Kukreja, L.M.; Bhawalkar, D.D.; Basu, C.; Goswami, J.N.

    1984-01-01

    Recent studies have shown that Allyl Diglycol Carbonate, commercially known as CR-39 (the most sensitive among etch track detectors) can detect relativistic oxygen and other heavier nuclei. We are using large sheets of special grade CR-39 (DOP) in our experiment in Space Shuttle-Spacelab-3. As CR-39 is a highly brittle substance, special care is required to cut CR-39 shetts, especially in case of large sheets and circular cuts. A study of cutting of CR-39 sheets using laser light is described in this paper. It has been found that this method is sufficiently fast to handle large number of sheets and also equally safe for big sheets. A maximum speed up to 200 cm/min with a 5 x 10 4 W/cm 2 laser is obtained during the present study. This study also shows that laser cutting does not affect the track properties of CR-39. (orig.)

  18. Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

    International Nuclear Information System (INIS)

    Oh, Teresa; Oh, Kyoung Suk; Lee, Kwang-Man; Choi, Chi Kyu

    2004-01-01

    The amorphous structure of organic-inorganic hybrid type Si-O-C thin films was studied using the first principles molecular-dynamics method with density functional techniques. The correlation between the dielectric constant and the degree of amorphous structure in organic-inorganic hybrid type Si-O-C thin films was studied. Si-O-C thin films were deposited by high-density plasma chemical vapor deposition using bis-trimethylsilylmethane and oxygen precursors. As-deposited films and films annealed at 500 deg. C were analyzed by X-ray diffraction (XRD). For quantitative analysis, the X-ray diffraction patterns of the samples were transformed to the radial distribution function (RDF) using Fourier analysis. Hybrid type Si-O-C thin films can be divided into three types using their amorphous structure and the dielectric constant: those with organic, hybrid, and inorganic properties

  19. Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power

    International Nuclear Information System (INIS)

    Huang Huan; Zhang Lei; Wang Yang; Han Xiaodong; Wu Yiqun; Zhang Ze; Gan Fuxi

    2011-01-01

    Research highlights: → We study the optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization. → The optical and dielectric constants, absorption coefficient of Si 15 Sb 85 change regularly with the increasing laser power. → The optical band gaps of Si 15 Sb 85 irradiated upon different power lasers were calculated. → HRTEM images of the samples were observed and the changes of optical and dielectric constants are determined by crystalline structures changes of the films. - Abstract: The optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.

  20. Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

    Directory of Open Access Journals (Sweden)

    Dahlang Tahir

    2011-11-01

    Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

  1. Application of YAG Laser TIG Arc Hybrid Welding to Thin AZ31B Magnesium Alloy Sheet

    Science.gov (United States)

    Kim, Taewon; Kim, Jongcheol; Hasegawa, Yu; Suga, Yasuo

    A magnesium alloy is said to be an ecological material with high ability of recycling and lightweight property. Especially, magnesium alloys are in great demand on account of outstanding material property as a structural material. Under these circumstances, research and development of welding process to join magnesium alloy plates are of great significance for wide industrial application of magnesium. In order to use it as a structure material, the welding technology is very important. TIG arc welding process is the most ordinary process to weld magnesium alloy plates. However, since the heat source by the arc welding process affects the magnesium alloy plates, HAZ of welded joint becomes wide and large distortion often occurs. On the other hand, a laser welding process that has small diameter of heat source seems to be one of the possible means to weld magnesium alloy in view of the qualitative improvement. However, the low boiling point of magnesium generates some weld defects, including porosity and solidification cracking. Furthermore, precise edge preparation is very important in butt-welding by the laser welding process, due to the small laser beam diameter. Laser/arc hybrid welding process that combines the laser beam and the arc is an effective welding process in which these two heat sources influence and assist each other. Using the hybrid welding, a synegistic effect is achievable and the disadvantages of the respective processes can be compensated. In this study, YAG laser/TIG arc hybrid welding of thin magnesium alloy (AZ31B) sheets was investigated. First of all, the effect of the irradiation point and the focal position of laser beam on the quality of a weld were discussed in hybrid welding. Then, it was confirmed that a sound weld bead with sufficient penetration is obtained using appropriate welding conditions. Furthermore, it was made clear that the heat absorption efficiency is improved with the hybrid welding process. Finally, the tensile tests

  2. Spectral and directional radiation characteristics of thin-film coated isothermal semitransparent plates

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, R P; Viskanta, R

    1975-01-01

    An analysis is presented for predicting the effective spectral directional radiation characteristics of an isothermal, semitransparent sheet surrounded on both sides by massive dielectrics. The sheet can be coated with an optically thin film and used as selective cover plates for solar collectors. Directional and polarization effects and the spectral transmittance and reflectance are considered. Sample results for candidate materials are presented.

  3. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  4. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    International Nuclear Information System (INIS)

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    Science.gov (United States)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  6. Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

    International Nuclear Information System (INIS)

    Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

    2018-01-01

    La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping. (orig.)

  7. Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

    Science.gov (United States)

    Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

    2018-01-01

    La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

  8. Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

    2014-01-01

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

  9. Strain tensor selection and the elastic theory of incompatible thin sheets.

    Science.gov (United States)

    Oshri, Oz; Diamant, Haim

    2017-05-01

    The existing theory of incompatible elastic sheets uses the deviation of the surface metric from a reference metric to define the strain tensor [Efrati et al., J. Mech. Phys. Solids 57, 762 (2009)JMPSA80022-509610.1016/j.jmps.2008.12.004]. For a class of simple axisymmetric problems we examine an alternative formulation, defining the strain based on deviations of distances (rather than distances squared) from their rest values. While the two formulations converge in the limit of small slopes and in the limit of an incompressible sheet, for other cases they are found not to be equivalent. The alternative formulation offers several features which are absent in the existing theory. (a) In the case of planar deformations of flat incompatible sheets, it yields linear, exactly solvable, equations of equilibrium. (b) When reduced to uniaxial (one-dimensional) deformations, it coincides with the theory of extensible elastica; in particular, for a uniaxially bent sheet it yields an unstrained cylindrical configuration. (c) It gives a simple criterion determining whether an isometric immersion of an incompatible sheet is at mechanical equilibrium with respect to normal forces. For a reference metric of constant positive Gaussian curvature, a spherical cap is found to satisfy this criterion except in an arbitrarily narrow boundary layer.

  10. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Wong, William S.

    2018-02-01

    Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

  11. Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

    Science.gov (United States)

    Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

    2018-02-01

    An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

  12. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    Science.gov (United States)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  13. Thinning and functionalization of few-layer graphene sheets by CF4 plasma treatment

    KAUST Repository

    Shen, Chao

    2012-05-24

    Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices.

  14. Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

    2011-11-01

    Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

  15. Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

    Science.gov (United States)

    Ortega, N.; Kumar, Ashok; Katiyar, R. S.

    2008-10-01

    We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

  16. Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2003-07-01

    Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

  17. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  18. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    Science.gov (United States)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

  19. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  20. Dielectric aluminium phosphate thin films. Couches minces dielectriques de phosphate d'aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Daviero, S. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Avinens, C. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Ibanez, A. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Giuntini, J.C. (Lab. Physicochimie des Materiaux Solides, 34 -Montpellier (France)); Philippot, E. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France))

    1993-04-01

    Aluminium phosphate thin films on silicium substrate have been carried out from tributylphosphate and aluminium acetylacetonate precursors in solution through the ''pyrosol'' process. It can be observed a large range of chemical analysis in terms of experimental conditions. These thin films have been characterized by X-ray diffraction and infrared spectrometry. Their electrical characteristics, defined from direct current and alternative current measurements, are quite different to those of the crystallized phosphate and can be explained by P-O and Al-O ''dangling bond'' existence. (orig.).

  1. Failure Models of Thin-walled Steel Sheeting and Structural-spatial Design Process

    NARCIS (Netherlands)

    Hofmeyer, H.

    2009-01-01

    This presentation is the first on 20 years of research on the failure mechanisms of sheeting subjected to combined concentrated load and bending moment, performed at Technische Universiteit Eindhoven. The aim of this research is to develop accurate, insight providing design rules using simple

  2. Multi-decadal dynamic thinning on the northwest margin of the Greenland Ice Sheet

    DEFF Research Database (Denmark)

    Korsgaard, Niels Jákup; Kjær, Kurt H.; Khan, Shfaqat Abbas

    records with a 25 m grid resolution and vertical uncertainty of 4.6m. Comparative DEMs were derived from laser altimetry data recorded in 2005 and 2010. Ice loss from the Greenland Ice Sheet (GrIS) can be partitioned into surface mass balance (SMB) processes (runoff and precipitation) and ice dynamics...

  3. Stamping of Thin-Walled Structural Components with Magnesium Alloy AZ31 Sheets

    International Nuclear Information System (INIS)

    Chen, F.-K.; Chang, C.-K.

    2005-01-01

    In the present study, the stamping process for manufacturing cell phone cases with magnesium alloy AZ31 sheets was studied using both the experimental approach and the finite element analysis. In order to determine the proper forming temperature and set up a fracture criterion, tensile tests and forming limit tests were first conducted to obtain the mechanical behaviors of AZ31 sheets at various elevated temperatures. The mechanical properties of Z31 sheets obtained from the experiments were then adopted in the finite element analysis to investigate the effects of the process parameters on the formability of the stamping process of cell phone cases. The finite element simulation results revealed that both the fracture and wrinkle defects could not be eliminated at the same time by adjusting blank-holder force or blank size. A drawbead design was then performed using the finite element simulations to determine the size and the location of drawbead required to suppress the wrinkle defect. An optimum stamping process, including die geometry, forming temperature, and blank dimension, was then determined for manufacturing the cell phone cases. The finite element analysis was validated by the good agreement between the simulation results and the experimental data. It confirms that the cell phone cases can be produced with magnesium alloy AZ31 sheet by the stamping process at elevated temperatures

  4. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    Abstract. Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at ..... This work was partially supported by The Management Unit of Scientific Research Project of Bozok University and Hitit. University.

  5. Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba0.95Ca0.05(Ti0.93Sn0.07O3 Lead-Free Piezoceramic Sheets

    Directory of Open Access Journals (Sweden)

    Chien-Min Cheng

    2018-01-01

    Full Text Available By the conventional solid state reaction method, a small amount of lithium fluoride (LiF was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba0.95Ca0.05(Ti0.93Sn0.07O3 (BCTS lead-free piezoceramic sheets. Using X-ray diffraction (XRD and a scanning electron microscope (SEM, the inferences of the crystalline and surface microstructures were obtained and analyzed. Then, the impedance analyzer and d33-meter were used to measure the dielectric and piezoelectric characteristics. In this study, the optimum sintering temperature of the BCTS sheets decreased from 1450 °C to 1390 °C due to LiF doping. For the 0.07 wt % LiF-doped BCTS sheets sintered at 1390 °C, the piezoelectric constant (d33 is 413 pC/N, the electric–mechanical coupling coefficient (kp is 47.5%, the dielectric loss (tan δ is 3.9%, and the dielectric constant (εr is 8100, which are all close to or even better than that of the pure undoped BCTS ceramics. The Curie temperature also improved, from 85 °C for pure BCTS to 140 °C for BCTS–0.07 LiF sheets. Furthermore, by using the vibration system and fixing 1.5 g tip mass at the end of the sheets, as the vibration frequency is 20 Hz, the proposed piezoelectric ceramic sheets also reveal a good energy harvesting performance at the maximum output peak voltage of 4.6 V, which is large enough and can be applied in modern low-power electronic products.

  6. AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

    Science.gov (United States)

    Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

    2017-11-01

    Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

  7. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  8. A study of dynamic resistance during small scale resistance spot welding of thin Ni sheets

    International Nuclear Information System (INIS)

    Tan, W; Zhou, Y; Kerr, H W; Lawson, S

    2004-01-01

    The dynamic resistance has been investigated during small scale resistance spot welding (SSRSW) of Ni sheets. Electrical measurements have been correlated with scanning electron microscope images of joint development. The results show that the dynamic resistance curve can be divided into the following stages based on physical change in the workpieces: asperity heating, surface breakdown, asperity softening, partial surface melting, nugget growth and expulsion. These results are also compared and contrasted with dynamic resistance behaviour in large scale RSW

  9. Onset of fast "ideal" tearing in thin current sheets: Dependence on the equilibrium current profile

    Science.gov (United States)

    Pucci, F.; Velli, M.; Tenerani, A.; Del Sarto, D.

    2018-03-01

    In this paper, we study the scaling relations for the triggering of the fast, or "ideal," tearing instability starting from equilibrium configurations relevant to astrophysical as well as laboratory plasmas that differ from the simple Harris current sheet configuration. We present the linear tearing instability analysis for equilibrium magnetic fields which (a) go to zero at the boundary of the domain and (b) contain a double current sheet system (the latter previously studied as a Cartesian proxy for the m = 1 kink mode in cylindrical plasmas). More generally, we discuss the critical aspect ratio scalings at which the growth rates become independent of the Lundquist number S, in terms of the dependence of the Δ' parameter on the wavenumber k of unstable modes. The scaling Δ'(k) with k at small k is found to categorize different equilibria broadly: the critical aspect ratios may be even smaller than L/a ˜ Sα with α = 1/3 originally found for the Harris current sheet, but there exists a general lower bound α ≥ 1/4.

  10. Electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Her, Jim-Long [Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan (China); Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Liu, Jiang-Hung; Wang, Hong-Jun; Chen, Ching-Hung [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Koyama, Keiichi [Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065 (Japan)

    2014-10-31

    In this article, we studied the structural properties and electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO{sub 3} gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm{sup 2}/V-s, a high I{sub on}/I{sub off} current ratio of 4.2 × 10{sup 8}, and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO{sub 3} a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation. - Highlights: • Indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) • Structural and electrical properties of the GdTiO{sub 3} film were studied. • a-IGZO TFT featuring GdTi{sub x}O{sub y} dielectric exhibited better electrical characteristics. • TFT instability investigated under positive and negative gate-bias stress conditions.

  11. Design and fabrication of multi-dielectric thin film laser filters and mirrors

    International Nuclear Information System (INIS)

    Alsous, M. B.

    2005-01-01

    Multi-dielectric-film optical filters have designed as mirrors for frequency-doubled-Nd-YAG pumped Raman lasers at different wavelengths (435, 369.9, 319.8, 953.6, 683 nm), and for use in CVL pumped dye lasers: as beam-splitters, antireflection filters, and narrow-band filters. In this work, a theoretical design of these mirrors and filters is given. The treatment and optimization of these designs is detailed in order to overcome the difficulties and reach the final and suitable designs for our needs. In addition, we will describe the evaporation method and the best conditions to do it. These filters should be easy to make and able to resist the laser powers of the pulsed Nd-YAG laser (200mJ/pulse) and the output power of the CVL. Thus, we have adopted designs with the least number of layers and used materials and oxides, which could resist to high laser powers. These filters were tested with laser shots and the convenient designs that were able to support the laser power have been adopted. (Author)

  12. Near-field microwave detection of corrosion precursor pitting under thin dielectric coatings in metallic substrate

    International Nuclear Information System (INIS)

    Hughes, D.; Zoughi, R.; Austin, R.; Wood, N.; Engelbart, R.

    2003-01-01

    Detection of corrosion precursor pitting on metallic surfaces under various coatings and on bare metal is of keen interest in evaluation of aircraft fuselage. Near-field microwave nondestructive testing methods, utilizing open-ended rectangular waveguides and coaxial probes, have been used extensively for detection of surface flaws in metals, both on bare metal and under a dielectric coating. This paper presents the preliminary results of using microwave techniques to detect corrosion precursor pitting under paint and primer, applique and on bare metal. Machined pits of 500 μm diameter were detected using open-ended rectangular waveguides at V-Band under paint and primer and applique, and on bare metal. Using coaxial probes, machined pits with diameters down to 150 μm on bare metal were also detected. Relative pit size and density were shown on a corrosion-pitted sample using open-ended rectangular waveguides at frequencies of 35 GHz to 70 GHz. The use of Boeing's MAUS TM scanning systems provided improved results by alleviating standoff variation and scanning artifact. Typical results of this investigation are also presented

  13. Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

    Energy Technology Data Exchange (ETDEWEB)

    Karpagaraj, A.; Siva shanmugam, N., E-mail: nsiva@nitt.edu; Sankaranarayanasamy, K.

    2015-07-29

    Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity.

  14. Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

    International Nuclear Information System (INIS)

    Karpagaraj, A.; Siva shanmugam, N.; Sankaranarayanasamy, K.

    2015-01-01

    Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity

  15. Texture and structure of VT-19 alloy thin sheets and their welded joints

    International Nuclear Information System (INIS)

    Ehgiz, I.V.; Babarehko, A.A.; Khorev, M.A.

    1986-01-01

    The phase content and texture of VT-19 alloys in all zones of welded joints (weld, a heat affected zone a base metal) after different heat treatments and the effect of the latter on mechanical properties of the welded joint are studied. It is characteristic of a 2.5 mm sheet of the VT-19 alloy rolled in the β → α phase transformation temperature range the development of β-phase plane deformation textures with (001), (112), (111) orientations in the rolling plane that compose 56% of the β-phase material volume. In this case a texture of univariant phase transformation of the above β-phase components { 1120 } - { 1122 } - { 1124 }, as well as that of α-phase plane deformation } 1014 } - { 1015 } are formed in the α-phase. Hardening with subsequent ageing of the rolled sheet leads to increasing the fraction of textured material in the β-phase up to 95% with expanding the volume with the (111) orientation, but as a whole the β-phase texture type remains the same. The α-phase texture type corresponds to the univariant β → α phase transformation, the material having the α-phase texture accounts for 70%. In the weld zone the and axes with orientation spreading to 20 deg are the β-phase crystallization axes in the trans verse direction. The textured material accounts for ∼ 70%. The same texture is observed along the normal to the sheet plane. The α-phase texture after hardening and ageing corresponds to the univariant phase transformation of the above-mentionedβ-phase orientations, the material volume with the α-phase texture is ∼80%

  16. Dielectric properties of thin C r2O3 films grown on elemental and oxide metallic substrates

    Science.gov (United States)

    Mahmood, Ather; Street, Michael; Echtenkamp, Will; Kwan, Chun Pui; Bird, Jonathan P.; Binek, Christian

    2018-04-01

    In an attempt to optimize leakage characteristics of α-C r2O3 thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and V2O3 (0001), supported on A l2O3 substrate. The local conductivity was measured by conductive atomic force microscopy mapping of C r2O3 surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, the C r2O3 film on V2O3 exhibited no leakage paths at similar tip bias value. Electrical resistance measurements through e-beam patterned top electrodes confirmed the resistivity mismatch between the films grown on different electrodes. The x-ray analysis attributes this difference to the twin free C r2O3 growth on V2O3 seeding.

  17. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  18. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  19. Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability

    Directory of Open Access Journals (Sweden)

    Jaehoon Park

    2010-06-01

    Full Text Available We investigated the electrical stabilities of two types of pentacene-based organic thin-film transistors (OTFTs with two different polymeric dielectrics: polystyrene (PS and poly(4-vinyl phenol (PVP, in terms of the interfacial charge depletion. Under a short-term bias stress condition, the OTFT with the PVP layer showed a substantial increase in the drain current and a positive shift of the threshold voltage, while the PS layer case exhibited no change. Furthermore, a significant increase in the off-state current was observed in the OTFT with the PVP layer which has a hydroxyl group. In the presence of the interfacial hydroxyl group in PVP, the holes are not fully depleted during repetitive operation of the OTFT with the PVP layer and a large positive gate voltage in the off-state regime is needed to effectively refresh the electrical characteristics. It is suggested that the depletion-limited holes at the interface, i.e., interfacial charge depletion, between the PVP layer and the pentacene layer play a critical role on the electrical stability during operation of the OTFT.

  20. Study of microstructural evolution in friction-stir welded thin-sheet Al-Cu-Li alloy using transmission-electron microscopy

    International Nuclear Information System (INIS)

    Shukla, A.K.; Baeslack, W.A.

    2007-01-01

    Microstructure evolution in friction-stir welded thin-sheet Al-Cu-Li alloy was studied using transmission-electron microscopy (TEM) and the dissolution and coarsening of T 1 and θ' precipitates were related to the microhardness profile of the weld

  1. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    International Nuclear Information System (INIS)

    Zeng, F. W.; Lane, M. W.; Gates, S. M.

    2014-01-01

    Organosilicate glass (OSG) is often used as an interlayer dielectric (ILD) in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, G TH , were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species

  2. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  3. Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

    Directory of Open Access Journals (Sweden)

    Frederik Westergaard Østerberg

    2018-05-01

    Full Text Available We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

  4. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  5. AC and dielectric properties of vacuum evaporated InTe bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.com [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Saravanakumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), GN Mills (po), Coimbatore 641 029, Tamil Nadu (India); Velumani, S. [Department of Electrical Engineering (SEES), CINVESTAV-IPN Zacatenco, D.F., 07360 (Mexico)

    2010-10-25

    III-VI compound semiconductors receive great attention due to its applications in memory devices, switching devices, gas sensors, hybrid solar cells, etc. InTe thin films were prepared by sequential thermal evaporation of In and Te at Ar atmosphere. X-ray diffraction pattern of the films shows that the films posses mixed phase of In{sub 2}Te{sub 3} and In{sub 2}Te{sub 5}. Grain size (D) and dislocation density were calculated by using Scherer's formula. Surface morphology of the film is analyzed by SEM and the surface is found to be agglomeration of well defined grains. EDS analysis reveals that elemental composition is in right stoichiometry. The value of capacitance and tan {delta} was recorded with respect to different frequencies and at different temperatures. It is observed that the capacitance decreases with increase in frequency at all temperatures. The observed nature of the capacitance is due to the inability of the dipoles to orient in a rapidly varying electric field. The pronounced increase in capacitance toward the low frequency region may be attributed to the blocking of charge carriers at the electrodes which leads to space charge layer resulting in the increase of capacitance. The mechanism responsible for AC conduction is found to be electronic hopping. TCC and TCP values were calculated and the results are discussed.

  6. Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

    Science.gov (United States)

    Li, Xue; Niitsoo, Olivia; Couzis, Alexander

    2016-03-01

    An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. Copyright © 2015 Elsevier Inc. All rights reserved.

  7. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    International Nuclear Information System (INIS)

    Zhu Xiaohong; Ren Yinjuan; Zhang Caiyun; Zhu Jiliang; Zhu Jianguo; Xiao Dingquan; Defaÿ, Emmanuel; Aïd, Marc

    2013-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm −1 ) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes. (paper)

  8. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    Science.gov (United States)

    Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

    2013-03-01

    Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.

  9. Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

    International Nuclear Information System (INIS)

    Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

    2015-01-01

    This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high–κ YbTi x O y gate dielectrics for indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTi x O y IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm 2 V −1 s −1 , a high I on /I off ratio of 2.8 × 10 7 , and a low subthreshold swing of 176 mV dec. −1 , relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTi x O y dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTi x O y IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions. (paper)

  10. Study of surface-modified PVP gate dielectric in organic thin film transistors with the nano-particle silver ink source/drain electrode.

    Science.gov (United States)

    Yun, Ho-Jin; Ham, Yong-Hyun; Shin, Hong-Sik; Jeong, Kwang-Seok; Park, Jeong-Gyu; Choi, Deuk-Sung; Lee, Ga-Won

    2011-07-01

    We have fabricated the flexible pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics treated by CF4/O2 plasma on poly[ethersulfones] (PES) substrate. The solution of gate dielectrics is made by adding methylated poly[melamine-co-formaldehyde] (MMF) to PVP. The PVP gate dielectric layer was cross linked at 90 degrees under UV ozone exposure. Source/drain electrodes are formed by micro contact printing (MCP) method using nano particle silver ink for the purposes of low cost and high throughput. The optimized OTFT shows the device performance with field effect mobility of the 0.88 cm2/V s, subthreshold slope of 2.2 V/decade, and on/off current ratios of 1.8 x 10(-6) at -40 V gate bias. We found that hydrophobic PVP gate dielectric surface can influence on the initial film morphologies of pentacene making dense, which is more important for high performance OTFTs than large grain size. Moreover, hydrophobic gate dielelctric surface reduces voids and -OH groups that interrupt the carrier transport in OTFTs.

  11. Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

    Science.gov (United States)

    Venkata Saravanan, K.; Raju, K. C. James

    2014-03-01

    The surface chemical states of RF-magnetron sputtered Ba0.5Sr0.5TiO3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O2 -, adsorbed oxide ion O- and lattice oxide ion O2-) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP ≦̸ 25%), whereas the films deposited in oxygen rich atmosphere (OMP ≧̸ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ~65% (@280 kV cm-1), with good ɛ r-E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications.

  12. Mechanics analysis of axisymmetric thin-walled part in warm sheet hydroforming

    Directory of Open Access Journals (Sweden)

    Yang Xiying

    2015-10-01

    Full Text Available To obtain the influence of fluid pressure and temperature on warm hydroforming of 5A06-O aluminum alloy sheet, the unified mechanics equilibrium equations, which take through-thickness normal stress and friction into account, were established in spherical coordinate system. The distribution of through-thickness normal stress in the thickness direction was determined. The relation between through-thickness normal stress and fluid pressure was also analyzed in different regions of cylindrical cup. Based on the method of subtracting one increasing function from another, the constitutive equation of 5A06-O applied to warm hydroforming was established and in a good agreement with uniaxial tensile data. Based on whether the thickness variation was taken into account, two mechanic models were established to do the comparative study. The results for the studied case show that the calculated stress values are pretty close according to the two models and consistent with results of finite element analysis; the thickness distribution in flange computed by the second model conforms to the experimental data. Finally, the influences of fluid pressure on the flange thickness and radial stress were analyzed.

  13. Electrospraying and ultraviolet light curing of nanometer-thin polydimethylsiloxane membranes for low-voltage dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Töpper, Tino; Siketanc, Matej; Kovacs, Gabor M.; Müller, Bert

    2017-04-01

    Dielectric elastomer transducers (DETs) have attracted interest as actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. To reach strains of more than 10 %, they currently require operating voltages of several hundred volts. In medical applications for artificial muscles, however, their operation is limited to a very few tens of volts, which implies high permittivity materials and thin-film structures. Such micro- or nanostructures can be prepared using electro-spraying, a cost-effective technique that allows upscaling using multiple nozzles for the fabrication of silicone films down to nanometer thickness. Deposition rates of several micrometers per hour have already been reached. It has been recently demonstrated that such membranes can be fabricated by electro-spraying and subsequent ultraviolet light irradiation. Herein, we introduce a relatively fast deposition of a dimethyl silicone copolymer fluid that contains mercaptopropyl side chains in addition to the methyl groups. Its elastic modulus was tuned with the irradiation dose of the 200 W Hg-Xe lamp. We also investigated the formation of elastomer films, using polymer concentrations in ethyl acetate of 1, 2, 5 and 10 vol%. After curing, the surface roughness was measured by means of atomic force microscopy. This instrument also enabled us to determine the average elastic modulus out of, for example, 400 nanoindentation measurements, using a spherical tip with a radius of 500 nm. The elastomer films were cured for a period of less than one minute, a speed that makes it feasible to combine electro-spraying and in situ curing in a single process step for fabricating low-voltage, multilayer DETs.

  14. Mesoporous polyaniline film on ultra-thin graphene sheets for high performance supercapacitors

    Science.gov (United States)

    Wang, Qian; Yan, Jun; Fan, Zhuangjun; Wei, Tong; Zhang, Milin; Jing, Xiaoyan

    2014-02-01

    A facile approach has been developed to fabricate mesoporous PANI film on ultra-thin graphene nanosheet (G-mPANI) hybrid by in situ polymerization using graphene-mesoporous silica composite as template. Due to its mesoporous structure, over-all conductive network, G-mPANI electrode displays a specific capacitance of 749 F g-1 at 0.5 A g-1 with excellent rate capability (remains 73% even at 5.0 A g-1), much higher than that of pristine PANI electrode (315 F g-1 at 0.5 A g-1, 39% retention at 5.0 A g-1) in 1 mol L-1 H2SO4 aqueous solution. More interestingly, the G-mPANI hybrid can maintain 88% of its initial capacitance compared to 45% for pristine PANI after 1000 cycles, suggesting a superior electrochemical cyclic stability.

  15. Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2015-01-01

    Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

  16. Study of the influence between the strength of antibending of working rolls on the widening during hot rolling of thin sheet metal

    Directory of Open Access Journals (Sweden)

    U. Muhin

    2016-07-01

    Full Text Available Based on the variation principle of Jourdan was developed a mathematical model of the process of widening freely in hot rolling of thin sheet metal. The principle applies to rigid-plastic materials and for the cinematically admissible area of speeds. The developed model allows to study the distribution of the widening on the length of the deformation zone depending on the parameters of the rolling process and sheet metal. Results are obtained, characterizing the size of the widening and effectiveness of the process control on tension at the entrance and exit from the stand. The widening is dependent on the strength of anti bending.

  17. Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

    Directory of Open Access Journals (Sweden)

    Junsheng Liang

    2016-01-01

    Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

  18. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

    Science.gov (United States)

    Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

    2017-07-01

    In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

  19. Magnetostriction Increase of Polycrystalline Fe-Al-B Thin Sheets after Thermomechanical Process

    Science.gov (United States)

    Dias, M. B. S.; Fulop, G. O.; Baldan, C. A.; Bormio-Nunes, C.

    2017-12-01

    Magnetostrictive materials are applied in several types of sensors, actuators, and energy harvesting. In particular, for AC devices, thin materials are desired to reduce eddy current losses. It is well known that the magnetostriction of single crystals and textured materials is higher than in polycrystalline ones, however, the cost and manufacture speed are crucial to be used as parts of commercial devices. Therefore, polycrystalline samples are strong candidates for common applications. In this work, (Fe x Al100- x )98.4B1.6 ( x = 86.6, 82 and 79.4) alloys were rolled down to 0.7 mm of thickness and annealed at 1473 K (1200 °C) for 2 hours aiming to reduce the thickness of the samples without deteriorating the magnetic properties. The alloys, even with higher contents of Al, were easily deformed to the thickness of 0.7 mm and this ability is attributed to the presence of the Fe2B phase. After the thermomechanical process, new isotropic recrystallized grains emerged and the longitudinal magnetostriction increased to 75.8, 16.9, and 3.2 pct, achieving 28.3, 28.4, and 28.8 ppm, respectively, for x = 86.6, 82, and 79.4. The piezomagnetic coefficient obtained of 4 nm/A is a suitable actuating sensitivity.

  20. Influence of the Aluminium Alloy Type on Defects Formation in Friction Stir Lap Welding of Thin Sheets

    Directory of Open Access Journals (Sweden)

    M. I. Costa

    Full Text Available Abstract The weldability in Friction Stir Lap Welding (FSLW of heat and non-heat treatable aluminium alloys, the AA6082-T6 and the AA5754-H22 aluminium alloys, respectively, are compared. For both alloys, welds were produced in very thin sheets, using the same welding parameters and procedures, and strong differences in welds morphology were found. The strength of the welds was evaluated by performing tensile-shear tests under monotonic and cyclic loading conditions. As-welded and heat-treated samples of the AA6082- T6 were tested. It was found that the heat-treatable alloy is more sensitive to defects formation, in lap welding, than the non-heat-treatable alloy. The presence of defects has a strong influence on the monotonic and fatigue behaviour of the welds. In spite of this, for very high-applied stresses, the heat-treatable alloy welds perform better in fatigue than the non-heat-treatable alloy welds.

  1. Experimental and numerical determination of critical stress intensity factor of aluminum curved thin sheets under tensile stress

    Energy Technology Data Exchange (ETDEWEB)

    Heidarvand, Majid; Soltani, Naser; Hajializadeh, Farshid [University of Tehran, Tehran (Iran, Islamic Republic of)

    2017-05-15

    We determined the fracture toughness of aluminum curved thin sheets using tensile stress tests and finite element method. We applied Linear elastic fracture mechanics (LEFM) and Feddersen procedure to evaluate stress intensity factor of the samples with central wire-cut cracks and fatigue cracks with different lengths to investigate the notch radius effect. Special fixture design was utilized to establish uniform stress distribution at the crack zone. Less than 9 % difference was found between the wire-cut and the fatigue cracked samples. Since generating central fatigue crack with different lengths required so much effort, wire-cut cracked samples were used to determine critical stress intensity factor. Finite element analysis was also performed on one-quarter of the specimen using both the singular Borsum elements and the regular isoparametric elements to further investigate fracture toughness of the samples. It was observed that the singular elements presented better results than the isoparametric ones. A slight difference was also found between the results obtained from finite element method using singular elements and the experimental results.

  2. Comparison of the Effects of Tool Geometry for Friction Stir Welding Thin Sheet Aluminum Alloys for Aerospace Applications

    Science.gov (United States)

    Merry, Josh; Takeshita, Jennifer; Tweedy, Bryan; Burford, Dwight

    2006-01-01

    In this presentation, the results of a recent study on the effect of pin tool design for friction stir welding thin sheets (0.040") of aluminum alloys 2024 and 7075 are provided. The objective of this study was to investigate and document the effect of tool shoulder and pin diameter, as well as the presence of pin flutes, on the resultant microstructure and mechanical properties at both room temperature and cryogenic temperature. Specifically, the comparison between three tools will include: FSW process load analysis (tool forces required to fabricate the welds), Static Mechanical Properties (ultimate tensile strength, yield strength, and elongation), and Process window documenting the range of parameters that can be used with the three pin tools investigated. All samples were naturally aged for a period greater than 10 days. Prior research has shown 7075 may require post weld heat treatment. Therefore, an additional pair of room temperature and cryogenic temperature samples was post-weld aged to the 7075-T7 condition prior to mechanical testing.

  3. Novel cellulose ester substrates for high performance flat-sheet thin-film composite (TFC) forward osmosis (FO) membranes

    KAUST Repository

    Ong, Rui Chin

    2015-01-01

    A novel hydrophilic cellulose ester with a high intrinsic water permeability and a water partition coefficient was discovered to construct membrane supports for flat-sheet thin film composite (TFC) forward osmosis (FO) membranes for water reuse and seawater desalination with high performance. The performance of TFC-FO membranes prepared from the hydrophilic cellulose ester containing a high degree of OH and a moderate degree of Pr substitutions clearly surpasses those prepared from cellulose esters and other polymers with moderate hydrophilicity. Post-treatments of TFC-FO membranes using sodium dodecyl sulfate (SDS) and glycerol followed by heat treatment further enhance the water flux without compromising the selectivity. Positron annihilation lifetime analyses have confirmed that the SDS/glycerol post-treatment increases the free volume size and fractional free volume of the polyamide selective layer. The newly developed post-treated TFC-FO membranes exhibit a remarkably high water flux up to 90 LMH when the selective layer is oriented towards the draw solution (i.e., PRO mode) using 1. M NaCl as the draw solution and DI water as the feed. For seawater desalination, the membranes display a high water flux up to 35 LMH using a 2. M NaCl draw solution. These water fluxes exceeded the water fluxes achieved by other types of FO membranes reported in literatures. © 2014 Elsevier B.V.

  4. Characterization of lap joints laser beam welding of thin AA 2024 sheets with Yb:YAG disk-laser

    Science.gov (United States)

    Caiazzo, Fabrizia; Alfieri, Vittorio; Cardaropoli, Francesco; Sergi, Vincenzo

    2012-06-01

    Lap joints obtained by overlapping two plates are widely diffused in aerospace industry. Nevertheless, because of natural aging, adhesively bonded and riveted aircraft lap joints may be affected by cracks from rivets, voids or corrosion. Friction stir welding has been proposed as a valid alternative, although large heat affected zones are produced both in the top and the bottom plate due to the pin diameter. Interest has therefore been shown in studying laser lap welding as the laser beam has been proved to be competitive since it allows to concentrate the thermal input and increases productivity and quality. Some challenges arise as a consequence of aluminum low absorptance and high thermal conductivity; furthermore, issues are due to metallurgical challenges such as both micro and macro porosity formation and softening in the fused zone. Welding of AA 2024 thin sheets in a lap joint configuration is discussed in this paper: tests are carried out using a recently developed Trumpf TruDisk 2002 Yb:YAG disk-laser with high beam quality which allows to produce beads with low plates distortion and better penetration. The influence of the processing parameters is discussed considering the fused zone extent and the bead shape. The porosity content as well as the morphological features of the beads have been examined.

  5. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  6. The Work Softening by Deformation-Induced Disordering and Cold Rolling of 6.5 wt pct Si Steel Thin Sheets

    Science.gov (United States)

    Wang, Xianglong; Li, Haoze; Zhang, Weina; Liu, Zhenyu; Wang, Guodong; Luo, Zhonghan; Zhang, Fengquan

    2016-09-01

    As-cast strip of 6.5 wt pct Si steel was fabricated by twin-roll strip casting. After hot rolling at 1323 K (1050 °C), thin sheets with the thickness of 0.35 mm were produced by warm rolling at 373 K (100 °C) with rolling reductions of 15, 25, 35, 45, 55, and 65 pct. Influence of warm rolling reduction on ductility was investigated by room temperature bending test. The measurement of macro-hardness showed that "work softening" could begin when the warm rolling reduction exceeded 35 pct. The room temperature ductility of the thin sheets gradually increased with the increase of warm rolling reductions, and the plastic deformation during bending began to form when the warm rolling reduction was greater than 45 pct, the 65 pct rolled thin sheet exhibited the maximum plastic deformation of about 0.6 pct during bending at room temperature, with a few small dimples having been observed on the fracture surfaces. B2-ordered domains were formed in the 15, 25, 35, 45, and 55 pct rolled specimens, and their average size decreased with the increase of warm rolling reductions. By contrast, no B2-ordered domain could be found in the 65 pct rolled specimen. It had been observed that large-ordered domains could be split into several small parts by the slip of partial super-dislocations during warm rolling, which led to significant decrease of the order degree to cause the phenomenon of deformation-induced disordering. On the basis of these results, cold rolling schedule was developed to successfully fabricate 0.25-mm-thick sheets with good surface qualities and magnetic properties from warm rolled sheets.

  7. A study of the microstructure and optical properties of thin lead-dielectric cermet films. Ph.D. Thesis - Va. Polytechnic Inst. and State Univ.

    Science.gov (United States)

    Owen, R. B.

    1972-01-01

    A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices.

  8. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  9. Modelling and optimization of cut quality during pulsed Nd:YAG laser cutting of thin Al-alloy sheet for straight profile

    Science.gov (United States)

    Sharma, Amit; Yadava, Vinod

    2012-02-01

    Thin sheets of aluminium alloys are widely used in aerospace and automotive industries for specific applications. Nd:YAG laser beam cutting is one of the most promising sheetmetal cutting process for cutting sheets for any profile. Al-alloy sheets are difficult to cut by laser beam because of its highly reflective nature. This paper presents modelling and optimization of cut quality during pulsed Nd:YAG laser cutting of thin Al-alloy sheet for straight profile. In the present study, four input process parameters such as oxygen pressure, pulse width, pulse frequency, and cutting speed and two output parameters such as average kerf taper ( Ta) and average surface roughness ( Ra) are considered. The hybrid approach comprising of Taguchi methodology (TM) and response surface methodology (RSM) is used for modelling whereas multi-objective optimization is performed using hybrid approach of TM and grey relational analysis (GRA) coupled with entropy measurement methodology. The entropy measurement methodology is employed for the calculation of weight corresponding to each quality characteristic. The results indicate that the hybrid approaches applied for modelling and optimization of the LBC process are reasonable.

  10. Effect of Annealing on Mechanical Properties and Formability of Cold Rolled Thin Sheets of Fe-P P/M Alloys

    Science.gov (United States)

    Trivedi, Shefali; Ravi Kumar, D.; Aravindan, S.

    2016-10-01

    Phosphorus in steel is known to increase strength and hardness and decrease ductility. Higher phosphorus content (more than 0.05%), however, promotes brittle behavior due to segregation of Fe3P along the grain boundaries which makes further mechanical working of these alloys difficult. In this work, thin sheets of Fe-P alloys (with phosphorus in range of 0.1-0.35%) have been developed through processing by powder metallurgy followed by hot rolling and cold rolling. The effect of phosphorus content and annealing parameters (temperature and time) on microstructure, mechanical properties, formability in biaxial stretching and fracture behavior of the cold rolled and annealed sheets has been studied. A comparison has also been made between the properties of the sheets made through P/M route and the conventional cast route with similar phosphorus content. It has been shown that thin sheets of Fe-P alloys with phosphorous up to 0.35% possessing a good combination of strength and formability can be produced through rolling of billets of these alloys made through powder metallurgy technique without the problem of segregation.

  11. Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

    International Nuclear Information System (INIS)

    Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

    2010-01-01

    We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

  12. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  13. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  14. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-05-17

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

  15. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    Science.gov (United States)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  16. Dielectric properties of Ca(Zr0.05Ti0.95)O3 thin films prepared by chemical solution deposition

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Simoes, A.Z.; Santos, L.P.S.; Santos, M.R.M.C.; Longo, E.; Varela, J.A.

    2006-01-01

    Ca(Zr 0.05 Ti 0.95 )O 3 (CZT) thin films were grown on Pt(111)/Ti/SiO 2 /Si(100) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928K for 4h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47nm and thickness about 450nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100kHz and 0.032 at 1MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5μC/cm 2 , and coercive field of 18kV/cm, at an applied voltage of 6V. The leakage current density was about 4.6x10 -8 A/cm 2 at 3V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields

  17. Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2012-07-01

    We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

  18. Impedance spectroscopic and dielectric analysis of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A. [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia); Kahouli, A., E-mail: kahouli.kader@yahoo.fr [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia); Sylvestre, A., E-mail: alain.sylvestre@grenoble.cnrs.fr [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Defaye, E. [CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Yangui, B. [Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3}. Black-Right-Pointing-Pointer The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. Black-Right-Pointing-Pointer The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. Black-Right-Pointing-Pointer The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with Pt/BST/Pt/TiO{sub 2}/SiO{sub 2} structure was prepared by ion beam sputtering. The film was post annealed at 700 Degree-Sign C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1-10{sup 5} Hz] at different temperatures [175-350 Degree-Sign C]. The Nyquist plots (Z Double-Prime vs . Z Prime ) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z Double-Prime and M Double-Prime are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M{sup Double-Prime }/M{sup Double-Prime }{sub max} shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

  19. Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Li, Wei-Chen; Matsuda, Yasuhiro H.; Pan, Tung-Ming

    2013-01-01

    In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTi x O y gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTi x O y IGZO TFT device annealed at 400 °C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm 2 /V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high I on/off ratio(3.73 × 10 6 ). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTi x O y film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C. - Highlights: • ErTi x O y InGaZnO thin-film transistors (TFT). • Structural and electrical properties of the TFT were investigated. • TFT device annealed at 400 °C exhibited better electrical characteristics. • Reliability of TFT device can be improved by annealing at 400 °C

  20. Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

    Science.gov (United States)

    Khound, Sagarika; Sarma, Ranjit

    2018-01-01

    We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

  1. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  2. Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

    International Nuclear Information System (INIS)

    Venkata Saravanan, K; James Raju, K C

    2014-01-01

    The surface chemical states of RF-magnetron sputtered Ba 0.5 Sr 0.5 TiO 3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O 2 − , adsorbed oxide ion O − and lattice oxide ion O 2− ) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP not ≦ 25%), whereas the films deposited in oxygen rich atmosphere (OMP not ≧ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O 2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ∼65% (@280 kV cm −1 ), with good ϵ r -E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications. (papers)

  3. Wet chemical preparation of YVO{sub 4}:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

    Energy Technology Data Exchange (ETDEWEB)

    Klausch, A. [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany); Althues, H. [Fraunhofer Institute for Material and Beam Technology Winterbergstr. 28, 01309 Dresden (Germany); Freudenberg, T. [Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden (Germany); Kaskel, S., E-mail: Stefan.Kaskel@chemie.tu-dresden.de [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany)

    2012-04-30

    Highly transparent YVO{sub 4}:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO{sub 4}:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films. - Highlights: Black-Right-Pointing-Pointer Preparation of highly transparent Eu{sup 3+} doped YVO{sub 4} phosphor thin films. Black-Right-Pointing-Pointer Improved crystallinity and optical properties through heat treatment. Black-Right-Pointing-Pointer Red emitting films on glass substrates were combined with antimony tin oxide thin films. Black-Right-Pointing-Pointer Fully transparent, planar gas discharge lamp as prototype for a light emitting window.

  4. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  5. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  6. UV and plasma treatment of thin silver layers and glass surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

    2006-11-10

    Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

  7. UV and plasma treatment of thin silver layers and glass surfaces

    International Nuclear Information System (INIS)

    Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

    2006-01-01

    Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

  8. Exploration of a possible cause of magnetic reconfiguration/reconnection due to generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet

    Science.gov (United States)

    Huang, Y. C.; Lyu, L. H.

    2014-12-01

    Magnetic reconfiguration/reconnection plays an important role on energy and plasma transport in the space plasma. It is known that magnetic field lines on two sides of a tangential discontinuity can connect to each other only at a neutral point, where the strength of the magnetic field is equal to zero. Thus, the standard reconnection picture with magnetic field lines intersecting at the neutral point is not applicable to the component reconnection events observed at the magnetopause and in the solar corona. In our early study (Yu, Lyu, & Wu, 2011), we have shown that annihilation of magnetic field near a thin current sheet can lead to the formation of normal magnetic field component (normal to the current sheet) to break the frozen-in condition and to accelerate the reconnected plasma flux, even without the presence of a neutral point. In this study, we examine whether or not a generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet can also lead to reconnection of plasma flux. Our results indicate that a non-uniform enhancement of electric current can yield formation of field-aligned currents. The normal-component magnetic field generated by the field-aligned currents can yield reconnection of plasma flux just outside the current-enhancement region. The particle motion that can lead to non-uniform enhancement of electric currents will be discussed.

  9. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  10. Experimental study of nonlinear interaction of plasma flow with charged thin current sheets: 2. Hall dynamics, mass and momentum transfer

    Directory of Open Access Journals (Sweden)

    S. Savin

    2006-01-01

    Full Text Available Proceeding with the analysis of Amata et al. (2005, we suggest that the general feature for the local transport at a thin magnetopause (MP consists of the penetration of ions from the magnetosheath with gyroradius larger than the MP width, and that, in crossing it, the transverse potential difference at the thin current sheet (TCS is acquired by these ions, providing a field-particle energy exchange without parallel electric fields. It is suggested that a part of the surface charge is self-consistently produced by deflection of ions in the course of inertial drift in the non-uniform electric field at MP. Consideration of the partial moments of ions with different energies demonstrates that the protons having gyroradii of roughly the same size or larger than the MP width carry fluxes normal to MP that are about 20% of the total flow in the plasma jet under MP. This is close to the excess of the ion transverse velocity over the cross-field drift speed in the plasma flow just inside MP (Amata et al., 2005, which conforms to the contribution of the finite-gyroradius inflow across MP. A linkage through the TCS between different plasmas results from the momentum conservation of the higher-energy ions. If the finite-gyroradius penetration occurs along the MP over ~1.5 RE from the observation site, then it can completely account for the formation of the jet under the MP. To provide the downstream acceleration of the flow near the MP via the cross-field drift, the weak magnetic field is suggested to rotate from its nearly parallel direction to the unperturbed flow toward being almost perpendicular to the accelerated flow near the MP. We discuss a deceleration of the higher-energy ions in the MP normal direction due to the interaction with finite-scale electric field bursts in the magnetosheath flow frame, equivalent to collisions, providing a charge separation. These effective collisions, with a nonlinear frequency proxy of the order of the proton

  11. Homotopy Perturbation Method for Thin Film Flow and Heat Transfer over an Unsteady Stretching Sheet with Internal Heating and Variable Heat Flux

    Directory of Open Access Journals (Sweden)

    I-Chung Liu

    2012-01-01

    Full Text Available We have analyzed the effects of variable heat flux and internal heat generation on the flow and heat transfer in a thin film on a horizontal sheet in the presence of thermal radiation. Similarity transformations are used to transform the governing equations to a set of coupled nonlinear ordinary differential equations. The obtained differential equations are solved approximately by the homotopy perturbation method (HPM. The effects of various parameters governing the flow and heat transfer in this study are discussed and presented graphically. Comparison of numerical results is made with the earlier published results under limiting cases.

  12. Dielectric spectroscopy of [P(NID2OD-T2)]n thin films: Effects of UV radiation on charge transport

    International Nuclear Information System (INIS)

    Sepulveda, Pablo I.; Rosado, Alexander O.; Pinto, Nicholas J.

    2014-01-01

    Poly[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyll-alt-5,5′-(2,2′-bithiophene)]-[P(ND12OD-T2)] n is a n-doped polymer that is stable in air. Low frequency (40 Hz–30 kHz) dielectric spectroscopy shows that the polymer impedance strength is reduced under ultra-violet (UV) radiation as a result of charge increase in the bulk polymer. Photo-excitation and the creation of electron-hole pairs and subsequent hole recombination with electron trapping species adsorbed by the polymer are suggested as possible doping mechanisms. The relaxation times were also faster in the presence of UV indicating multiple pathways for oscillating dipoles to relax. These results imply increased polymer conductance with corresponding enhancement of charge mobility due to reduced scattering in the presence of UV radiation. A thin film field effect transistor was fabricated using this polymer as the active material and characterized in the presence of UV radiation. As expected, the device exhibited n-type behavior with a charge mobility of 3.0 × 10 −3 cm 2 /V-s. Exposure to UV radiation increased the channel current, shifted the threshold voltage to more negative values and doubled the value of the mobility. These results are consistent with dielectric measurements and suggest an easy method of increasing device currents and charge mobility in this polymer via UV irradiation. - Highlights: • Ultra-violet (UV) radiation dopes the polymer. • The doping is n-type. • UV radiation enhances charge mobility without post polymer processing. • Dielectric spectroscopy and field effect transistor results are self-consistent

  13. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  14. Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation.

    Science.gov (United States)

    Vergara, José; Favieres, Cristina; Magén, César; de Teresa, José María; Ibarra, Manuel Ricardo; Madurga, Vicente

    2017-12-05

    We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM). Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

  15. Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation

    Directory of Open Access Journals (Sweden)

    José Vergara

    2017-12-01

    Full Text Available We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM. Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

  16. The Relationship Between Chemical Structure and Dielectric Properties of Plasma-Enhanced Chemical Vapor Deposited Polymer Thin Films (Postprint)

    Science.gov (United States)

    2007-01-01

    C6H6, Aldrich Co., liquid , high performance liquid chromatography (HPLC) grade with a purity of 99.9%) and octafluorocyclobutane (C4F8, OFCB...attributed to the lack of molecular mobility (confined by the crosslinking) and low ionic polarization of the molecular structures [6]. The frequency...in dielectric constant at low frequencies can be traced to orientational polarizations of trapped free radicals, unpaired electron sites, oligomeric

  17. Experimental determination of thermal conductivities of dielectric thin films; Determination experimentale des conductivites thermiques de couches minces dielectriques

    Energy Technology Data Exchange (ETDEWEB)

    Scudeller, Y.; Hmina, N.; Lahmar, J.; Bardon, J.P. [Nantes Univ., 44 (France)

    1996-12-31

    This paper presents a method of measurement of thermal conductivity of sub-micron dielectric films in a direction perpendicular to the substrate. These films (oxides, nitrides, diamond..) are mainly used for the electrical insulation of semiconductor circuits and in optical treatments of high energy lasers. The principle of the method used and the experimental device are described. The results obtained with silicon oxides are discussed. (J.S.) 13 refs.

  18. AC conductivity and dielectric properties of amorphous GexSb40-xSe60 thin films

    International Nuclear Information System (INIS)

    Atyia, H.E.; Farid, A.M.; Hegab, N.A.

    2008-01-01

    Measurements of AC conductivity and dielectric properties have been made for chalcogenide film samples of Ge x Sb 40-x Se 60 (with x=0, 10 and 20 at%) at different temperatures (303-393 K) and various frequencies (10 2 -10 5 Hz). It was found that the AC conductivity obeys the law σ(ω, T)=Aω s . The exponent s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W M was calculated from dielectric measurements according to the Guintini equation. It was found that the obtained value of W m agrees with that proposed by the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states N(E F ) has also been calculated for the studied compositions. The effect of decreasing the Sb content at the expense of the Ge content was investigated for the obtained results of the studied parameters

  19. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Huaping Wu

    2016-01-01

    Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  20. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

    2016-01-15

    The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  1. Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

    Directory of Open Access Journals (Sweden)

    Shangxiong Zhou

    2018-05-01

    Full Text Available In this paper, a high-k metal-oxide film (ZrO2 was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD, X-ray reflectivity (XRR and atomic force microscopy (AFM. Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.

  2. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

    International Nuclear Information System (INIS)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-01-01

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene–graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm 2  V −1  s −1 and a threshold voltage of −0.7 V at V gs = −40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm 2  V −1  s −1 and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. (paper)

  3. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

    Science.gov (United States)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-02-28

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

  4. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  5. Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library

    International Nuclear Information System (INIS)

    Liu Guozhen; Wolfman, Jerome; Autret-Lambert, Cecile; Sakai, Joe; Roger, Sylvain; Gervais, Monique; Gervais, Francois

    2010-01-01

    Epitaxial growth of Ba 0.6 Sr 0.4 Ti 1-x Zr x O 3 (0≤x≤0.3) composition spread thin film library on SrRuO 3 /SrTiO 3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure, and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations in the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.

  6. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    James, K. K.; Satish, B.; Jayaraj, M. K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala (India)

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

  7. On the formation mechanisms of the diffuse atmospheric pressure dielectric barrier discharge in CVD processes of thin silica-like films

    International Nuclear Information System (INIS)

    Starostin, S A; Premkumar, P Antony; Creatore, M; Van Veldhuizen, E M; Van de Sanden, M C M; De Vries, H; Paffen, R M J

    2009-01-01

    Pathways of formation and temporal evolution of the diffuse dielectric barrier discharge at atmospheric pressure were experimentally studied in this work by means of optical (fast imaging camera) and electrical diagnostics. The chosen model system is relevant for applications of plasma-enhanced chemical vapor deposition of thin silica-like film on the polymeric substrate, from cost-efficient gas mixtures of Ar/N 2 /O 2 /hexamethyldisiloxane. It was found that the discharge can gradually experience the phases of homogeneous low current Townsend-like mode, local Townsend to glow transition and expanding high current density (∼0.7 A cm -2 ) glow-like mode. While the glow-like current spot occupies momentarily only a small part of the electrode area, its expanding behavior provides uniform treatment of the whole substrate surface. Alternatively, it was observed that a visually uniform discharge can be formed by the numerous microdischarges overlapping over the large electrode area.

  8. Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

    International Nuclear Information System (INIS)

    Shin, Sang-Il; Kwon, Jae-Hong; Ju, Byeong-Kwon; Kang, Hochul

    2008-01-01

    The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10 −2 cm 2 V −1 s −1 , a current on/off ratio of 10 5 , a threshold voltage of −2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film

  9. Viscous Potential Flow Analysis of Electroaerodynamic Instability of a Liquid Sheet Sprayed with an Air Stream

    Directory of Open Access Journals (Sweden)

    Mukesh Kumar Awasthi

    2013-01-01

    Full Text Available The instability of a thin sheet of viscous and dielectric liquid moving in the same direction as an air stream in the presence of a uniform horizontal electric field has been carried out using viscous potential flow theory. It is observed that aerodynamic-enhanced instability occurs if the Weber number is much less than a critical value related to the ratio of the air and liquid stream velocities, viscosity ratio of two fluids, the electric field, and the dielectric constant values. Liquid viscosity has stabilizing effect in the stability analysis, while air viscosity has destabilizing effect.

  10. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    Science.gov (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-05-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

  11. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret; Maller, Robert; Vaseem, Mohammad; McLachlan, Martyn A.; Shamim, Atif

    2017-01-01

    passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large

  12. Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

    2017-03-15

    A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

  13. A complementary organic inverter of porphyrazine thin films: low-voltage operation using ionic liquid gate dielectrics.

    Science.gov (United States)

    Fujimoto, Takuya; Miyoshi, Yasuhito; Matsushita, Michio M; Awaga, Kunio

    2011-05-28

    We studied a complementary organic inverter consisting of a p-type semiconductor, metal-free phthalocyanine (H(2)Pc), and an n-type semiconductor, tetrakis(thiadiazole)porphyrazine (H(2)TTDPz), operated through the ionic-liquid gate dielectrics of N,N-diethyl-N-methyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI). This organic inverter exhibits high performance with a very low operation voltage below 1.0 V and a dynamic response up to 20 Hz. © The Royal Society of Chemistry 2011

  14. Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

    Science.gov (United States)

    Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

    2017-08-01

    Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

  15. Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

    Science.gov (United States)

    Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

    2013-05-01

    A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

  16. Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

    Science.gov (United States)

    Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

    2017-11-01

    Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

  17. Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Haiyan [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Fu, Li, E-mail: fuli@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Liang, Pei; Liu, Fenjun [Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China)

    2017-03-15

    1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

  18. Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

    International Nuclear Information System (INIS)

    Chen, Haiyan; Fu, Li; Liang, Pei; Liu, Fenjun

    2017-01-01

    1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

  19. Electromigration study of Al thin films deposited on low dielectric polyimide and SiO sub 2 ILD

    CERN Document Server

    Eun, B S

    1999-01-01

    The electromigration characteristics of Al-1 %Si-0.5 %Cu films deposited onto three kinds of polyimides (PI-2734, PI-2611, and BG-2480) and onto SiO sub 2 prepared by low pressure chemical vapor deposition have been investigated. The Al lines deposited onto SiO sub 2 showed about a one-order higher electromigration lifetime than those deposited onto polyimide interlayer dielectrics (ILDs). The electromigration characteristics degraded as the polyimide thickness increased. Joule heat which accumulated at the Al/polyimide interface was the main cause of the decrease in the electromigration reliability because the thermal conductivity of the polyimides was about one order lower than that of SiO sub 2.

  20. Control of Nanoplane Orientation in voBN for High Thermal Anisotropy in a Dielectric Thin Film: A New Solution for Thermal Hotspot Mitigation in Electronics.

    Science.gov (United States)

    Cometto, Olivier; Samani, Majid K; Liu, Bo; Sun, Shuangxi; Tsang, Siu Hon; Liu, Johan; Zhou, Kun; Teo, Edwin H T

    2017-03-01

    High anisotropic thermal materials, which allow heat to dissipate in a preferential direction, are of interest as a prospective material for electronics as an effective thermal management solution for hot spots. However, due to their preferential heat propagation in the in-plane direction, the heat spreads laterally instead of vertically. This limitation makes these materials ineffective as the density of hot spots increases. Here, we produce a new dielectric thin film material at room temperature, named vertically ordered nanocrystalline h-BN (voBN). It is produced such that its preferential thermally conductive direction is aligned in the vertical axis, which facilitates direct thermal extraction, thereby addressing the increasing challenge of thermal crosstalk. The uniqueness of voBN comes from its h-BN nanocrystals where all their basal planes are aligned in the direction normal to the substrate plane. Using the 3ω method, we show that voBN exhibits high anisotropic thermal conductivity (TC) with a 16-fold difference between through-film TC and in-plane TC (respectively 4.26 and 0.26 W·m -1 ·K -1 ). Molecular dynamics simulations also concurred with the experimental data, showing that the origin of this anisotropic behavior is due to the nature of voBN's plane ordering. While the consistent vertical ordering provides an uninterrupted and preferred propagation path for phonons in the through-film direction, discontinuity in the lateral direction leads to a reduced in-plane TC. In addition, we also use COMSOL to simulate how the dielectric and thermal properties of voBN enable an increase in hot spot density up to 295% compared with SiO 2 , without any temperature increase.

  1. Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

    OpenAIRE

    Hamdi Muhyuddin D. Barra; Henry J. Ramos

    2011-01-01

    Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The ...

  2. Anomalous Li Storage Capability in Atomically Thin Two-Dimensional Sheets of Nonlayered MoO2

    KAUST Repository

    Xia, Chuan

    2018-02-01

    Since the first exfoliation and identification of graphene in 2004, research on layered ultrathin two-dimensional (2D) nanomaterials has achieved remarkable progress. Realizing the special importance of 2D geometry, we demonstrate that the controlled synthesis of nonlayered nanomaterials in 2D geometry can yield some unique properties that otherwise cannot be achieved in these nonlayered systems. Herein, we report a systematic study involving theoretical and experimental approaches to evaluate the Li-ion storage capability in 2D atomic sheets of nonlayered molybdenum dioxide (MoO2). We develop a novel monomer-assisted reduction process to produce high quality 2D sheets of nonlayered MoO2. When used as lithium-ion battery (LIB) anodes, these ultrathin 2D-MoO2 electrodes demonstrate extraordinary reversible capacity, as high as 1516 mAh g–1 after 100 cycles at the current rate of 100 mA g–1 and 489 mAh g–1 after 1050 cycles at 1000 mA g–1. It is evident that these ultrathin 2D sheets did not follow the normal intercalation-cum-conversion mechanism when used as LIB anodes, which was observed for their bulk analogue. Our ex situ XPS and XRD studies reveal a Li-storage mechanism in these 2D-MoO2 sheets consisting of an intercalation reaction and the formation of metallic Li phase. In addition, the 2D-MoO2 based microsupercapacitors exhibit high areal capacitance (63.1 mF cm–2 at 0.1 mA cm–2), good rate performance (81% retention from 0.1 to 2 mA cm–2), and superior cycle stability (86% retention after 10,000 cycles). We believe that our work identifies a new pathway to make 2D nanostructures from nonlayered compounds, which results in an extremely enhanced energy storage capability.

  3. Prediction of stress- and strain-based forming limits of automotive thin sheets by numerical, theoretical and experimental methods

    Science.gov (United States)

    Béres, Gábor; Weltsch, Zoltán; Lukács, Zsolt; Tisza, Miklós

    2018-05-01

    Forming limit is a complex concept of limit values related to the onset of local necking in the sheet metal. In cold sheet metal forming, major and minor limit strains are influenced by the sheet thickness, strain path (deformation history) as well as material parameters and microstructure. Forming Limit Curves are plotted in ɛ1 - ɛ2 coordinate system providing the classic strain-based Forming Limit Diagram (FLD). Using the appropriate constitutive model, the limit strains can be changed into the stress-based Forming Limit Diagram (SFLD), irrespective of the strain path. This study is about the effect of the hardening model parameters on defining of limit stress values during Nakazima tests for automotive dual phase (DP) steels. Five limit strain pairs were specified experimentally with the loading of five different sheet geometries, which performed different strain-paths from pure shear (-2ɛ2=ɛ1) up to biaxial stretching (ɛ2=ɛ1). The former works of Hill, Levy-Tyne and Keeler-Brazier made possible some kind of theoretical strain determination, too. This was followed by the stress calculation based on the experimental and theoretical strain data. Since the n exponent in the Nádai expression is varying with the strain at some DP steels, we applied the least-squares method to fit other hardening model parameters (Ludwik, Voce, Hockett-Sherby) to calculate the stress fields belonging to each limit strains. The results showed that each model parameters could produce some discrepancies between the limit stress states in the range of higher equivalent strains than uniaxial stretching. The calculated hardening models were imported to FE code to extend and validate the results by numerical simulations.

  4. Optimizing the Parameters in Heat Treatment for Achieving High Hardness and Efficient Bending of Thin BS 2014 Aluminium Alloy Sheets

    Directory of Open Access Journals (Sweden)

    Abirami Priyadarshini B.

    2016-05-01

    Full Text Available The present work targets in setting a standard heat treatment procedure for obtaining high hardness values of the order of 80 HRB in BS 2014 aluminium alloy sheets of 2mm thick commonly used in aerospace industries. A hardness range of 60HRB to 72HRB is possible in low thickness sheets as stated in the standard BS EN 485-2:2013. Experiments were performed to achieve higher hardness values by controlling the heat treatment temperatures thereby understanding the ageing mechanism of the Al-Cu alloy to a wider extent. The validated process sequence in turn resulted in complications where bending of the sheets resulted in cracking. Further investigation was performed and it was found that the BS 2014 alloy has to be bent within two hours of solution annealing in order to have an efficient bending. The results showed that the natural ageing is so rapid in this alloy, which strengthens the material so quickly by the formation of CuAl2 precipitates, thereby, demanding the bending procedure to be performed before the growth of precipitates becomes dominant.

  5. Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

    2016-06-25

    The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

  6. Numerical simulations for quantitative analysis of electrostatic interaction between atomic force microscopy probe and an embedded electrode within a thin dielectric: meshing optimization, sensitivity to potential distribution and impact of cantilever contribution

    Science.gov (United States)

    Azib, M.; Baudoin, F.; Binaud, N.; Villeneuve-Faure, C.; Bugarin, F.; Segonds, S.; Teyssedre, G.

    2018-04-01

    Recent experimental results demonstrated that an electrostatic force distance curve (EFDC) can be used for space charge probing in thin dielectric layers. A main advantage of the method is claimed to be its sensitivity to charge localization, which, however, needs to be substantiated by numerical simulations. In this paper, we have developed a model which permits us to compute an EFDC accurately by using the most sophisticated and accurate geometry for the atomic force microscopy probe. To avoid simplifications and in order to reproduce experimental conditions, the EFDC has been simulated for a system constituted of a polarized electrode embedded in a thin dielectric layer (SiN x ). The individual contributions of forces on the tip and on the cantilever have been analyzed separately to account for possible artefacts. The EFDC sensitivity to potential distribution is studied through the change in electrode shape, namely the width and the depth. Finally, the numerical results have been compared with experimental data.

  7. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Zeyada, H.M., E-mail: hzeyada@gmail.com [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Youssif, M.I.; El-Ghamaz, N.A. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Aboderbala, M.E.O. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Department of Physics, Faculty of Science, AlJabl Al Gharbi University (Libya)

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  8. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  9. Effect of yttrium doping on the dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} thin film produced by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saji, Viswanathan S., E-mail: vssaji@chosun.ac.k [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of); Choe, Han Cheol [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of)

    2009-05-29

    Pure and yttrium substituted CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x/} {sub 2} (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 {sup o}C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x} {sub /2} (x = 0.02) film at 1 KHz were k {approx} 2700 and tan {delta} {approx} 0.07.

  10. Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

    2013-12-02

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

  11. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing

    2011-08-29

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  12. Tunable silver-shell dielectric core nano-beads array for thin-film solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Chou Chau, Yuan-Fong, E-mail: a0920146302@gmail.com, E-mail: chou.fong@ubd.edu.bn; Lim, Chee Ming [Universiti Brunei Darussalam, Centre for Advanced Material and Energy Sciences (Brunei) (Brunei Darussalam); Chiang, Chien-Ying [National Taipei University of Technology, Department of Electro-Optical Engineering (China); Voo, Nyuk Yoong; Muhammad Idris, Nur Syafi’ie; Chai, Siew Ung [Universiti Brunei Darussalam, Centre for Advanced Material and Energy Sciences (Brunei) (Brunei Darussalam)

    2016-04-15

    The absorbance spectra of thin-film solar cells (TFSCs) can be enhanced by constructing the tunable periodic Ag-shell nano-bead (PASNB) arrays in the active material. In this paper, we investigated a plasmonic thin-film solar cell (TFSC) which composed of the arrays of PASNB deposited onto a crystalline silicon layer. By performing three-dimensional finite element method, we demonstrate that near field coupling among the PASNB arrays results in SPR modes with enhanced absorbance and field intensity. The proposed structure can significantly enhance the plasmonic activity in a wide range of incident light and enlarge working wavelength of absorbance in the range of near-UV, visible and near-infrared. We show that the sensitivity of the PASNB arrays reveals a linear relationship with the thickness of Ag-shell nano-bead (ASNB) for both the anti-bonding and bonding modes in the absorbance spectra. The broadband of absorbance spectra could be expanded as a wide range by varying the thickness of ASNB while the particle size is kept constant. Simulation results suggest this alternative scheme to the design and improvements on plasmonic enhanced TFSCs can be extended to other nanophotonic applications.

  13. Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films

    Science.gov (United States)

    Alema, Fikadu; Reich, Michael; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-08-01

    Composition, microstructure, and dielectric properties of undoped and Ba(Mg1/3Nb2/3)O3 (BMN) doped Ba0.45Sr0.55TiO3 (BST) thin films deposited via rf. magnetron sputtering on platinized alumina substrates have been investigated. The analysis of microstructure has shown that despite the sizable effect of doping on the residual stress, the latter is partially compensated by the thermal expansion coefficient mismatch, and its influence on the BST film crystal structure is insignificant. It was revealed that BMN doped film demonstrated an average (over 2000 devices) of 52.5% tunability at 640 kV/cm, which is ˜8% lower than the value for the undoped film. This drop is associated with the presence of Mg ions in BMN; however, the effect of Mg doping is partially compensated by that of Nb ions. The decrease in grain size upon doping may also contribute to the tunability drop. Doping with BMN allows achievement of a compensation concentration yielding no free carriers and resulting in significant leakage current reduction when compared with the undoped film. In addition, the presence of large amounts of empty shallow traps related to NbTi• allows localizing free carriers injected from the contacts thus extending the device control voltage substantially above 10 V.

  14. A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

    International Nuclear Information System (INIS)

    Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

    2010-01-01

    High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

  15. Enhanced dielectric properties of thin Ta{sub 2}O{sub 5} films grown on 65 nm SiO{sub 2}/Si

    Energy Technology Data Exchange (ETDEWEB)

    Kolkovsky, Vl.; Kurth, E.; Kunath, C. [IPMS Fraunhofer, Dresden, Maria-Reiche Str. 2, 01109 Dresden (Germany)

    2016-12-15

    The structural and electrical properties of Ta{sub 2}O{sub 5}/65 nm SiO{sub 2} structures with different thicknesses of Ta{sub 2}O{sub 5} varying in the range of 0-260 nm are investigated. We find that the stack structures grown by the magnetron sputtering technique and annealed at 1220 K in O and Ar atmosphere show one of the highest dielectric constant of Ta{sub 2}O{sub 5}(about 64) among those previously reported in the literature. The structure of the annealed polycrystalline Ta{sub 2}O{sub 5} films is orthorhombic, as obtained from X-ray diffraction measurements and we do not observe any preferential orientation of the annealed films. The Ta{sub 2}O{sub 5} films contain positively charged defects which become mobile at around 400 K and they are tentatively correlated with the oxygen vacancies. The leakage current in the stack structures is a factor of 20 higher compared to that in thin layers with 65 nm SiO{sub 2}. The conduction mechanism in the stack structures can be described by the Fowler-Nordheim model with a barrier height that decreases slightly (<10%) as a function of the thickness of the films. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Synthesis and electrical characterization of low-temperature thermal-cured epoxy resin/functionalized silica hybrid-thin films for application as gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Na, Moonkyong, E-mail: nmk@keri.re.kr [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784 (Korea, Republic of); Kang, Young Taec [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Department of Polymer Science and Engineering, Pusan National University, Busan, 609-735 (Korea, Republic of); Kim, Sang Cheol [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Kim, Eun Dong [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of)

    2013-07-31

    Thermal-cured hybrid materials were synthesized from homogenous hybrid sols of epoxy resins and organoalkoxysilane-functionalized silica. The chemical structures of raw materials and obtained hybrid materials were characterized using Fourier transform infrared spectroscopy. The thermal resistance of the hybrids was enhanced by hybridization. The interaction between epoxy matrix and the silica particles, which caused hydrogen bonding and van der Waals force was strengthened by organoalkoxysilane. The degradation temperature of the hybrids was improved by approximately 30 °C over that of the parent epoxy material. The hybrid materials were formed into uniformly coated thin films of about 50 nm-thick using a spin coater. An optimum mixing ratio was used to form smooth-surfaced hybrid films. The electrical property of the hybrid film was characterized, and the leakage current was found to be well below 10{sup −6} A cm{sup −2}. - Highlights: • Preparation of thermal-curable hybrid materials using epoxy resin and silica. • The thermal stability was enhanced through hybridization. • The insulation property of hybrid film was investigated as gate dielectrics.

  17. On the formation mechanisms of the diffuse atmospheric pressure dielectric barrier discharge in CVD processes of thin silica-like films

    Energy Technology Data Exchange (ETDEWEB)

    Starostin, S A; Premkumar, P Antony [Materials Innovation Institute (M2i), Mekelweg 2, 2600 GA Delft, The Netherland (Netherlands); Creatore, M; Van Veldhuizen, E M; Van de Sanden, M C M [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); De Vries, H; Paffen, R M J [FUJIFILM Manufacturing Europe B.V, PO Box 90156, Tilburg (Netherlands)

    2009-11-15

    Pathways of formation and temporal evolution of the diffuse dielectric barrier discharge at atmospheric pressure were experimentally studied in this work by means of optical (fast imaging camera) and electrical diagnostics. The chosen model system is relevant for applications of plasma-enhanced chemical vapor deposition of thin silica-like film on the polymeric substrate, from cost-efficient gas mixtures of Ar/N{sub 2}/O{sub 2}/hexamethyldisiloxane. It was found that the discharge can gradually experience the phases of homogeneous low current Townsend-like mode, local Townsend to glow transition and expanding high current density ({approx}0.7 A cm{sup -2}) glow-like mode. While the glow-like current spot occupies momentarily only a small part of the electrode area, its expanding behavior provides uniform treatment of the whole substrate surface. Alternatively, it was observed that a visually uniform discharge can be formed by the numerous microdischarges overlapping over the large electrode area.

  18. Interfacial characteristics and dielectric properties of Ba0.65Sr0.35TiO3 thin films

    International Nuclear Information System (INIS)

    Quan Zuci; Zhang Baishun; Zhang Tianjin; Zhao Xingzhong; Pan Ruikun; Ma Zhijun; Jiang Juan

    2008-01-01

    Ba 0.65 Sr 0.35 TiO 3 (BST) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti 4+ cations are partially reduced to form amorphous oxides such as TiO x (x -7 A/cm 2 at 1.23 V and lower than 5.66 x 10 -6 A/cm 2 at 2.05 V as well as breakdown strength is above 3.01 x 10 5 V/cm

  19. Optimization of resistance spot welding on the assembly of refractory alloy 50Mo-50Re thin sheet

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jianhui [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Jiang, Xiuping [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Zeng, Qiang [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Zhai, Tongguang [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States)]. E-mail: tzhai0@engr.uky.edu; Leonhardt, Todd [Rhenium Alloys Inc., Elyria, OH 44036 (United States); Farrell, John [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States); Umstead, Williams [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States); Effgen, Michael P. [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States)

    2007-07-01

    Resistance spot welding (RSW) was employed to pre-join refractory alloy 50Mo-50Re (wt%) sheet with a 0.127 mm gage. Five important welding parameters (hold time, electrode, ramp time, weld current and electrode force) were adjusted in an attempt to optimize the welding quality. It was found that increasing the hold time from 50 ms to 999 ms improved the weld strength. Use of rod-shaped electrodes produced symmetric nugget and enhanced the weld strength. Use of a ramp time of 8 ms minimized electrode sticking and molten metal expulsion. The weld strength continuously increased with increasing the weld current up to 1100 A, but the probabilities of occurrence of electrode sticking and molten metal expulsion were also increased. Electrode force was increased from 4.44 N to 17.8 N, in order to reduce the inconsistency of the welding quality. Welding defects including porosities, columnar grains and composition segregation were also studied.

  20. Thin Sheet Modeling for the Seismogenic Crust of Western North America: How Strong is the top Slice of "Sandwich Bread" Above the "Jelly"?

    Science.gov (United States)

    Klein, E. C.; Holt, W. E.; Flesch, L. M.; Haines, A. J.

    2006-12-01

    The "jelly sandwich" and "crème brûlée" models divides continental lithosphere into distinct rheological layers. Dynamic models from thin sheet approximations provide estimates of the total strength of the lithosphere, but only to a thickness governed by the degree of mechanical coupling between rheological layers. If either the "jelly sandwich" or the "crème brûlée" model of the lithosphere is appropriate for the diffuse plate boundary zone setting of western North America, we expect a sharp contrast or decoupling between the strong upper crust ("bread") layer overlying the weak lower crustal ("jelly") layer. We examine the strength of the upper crust with and without strength contribution from the lower crust using thin sheet modeling methodologies. We use seismically defined densities to constrain vertical integrals of vertical stress (GPE) within the crust. Neglecting stresses due to flexure as well as shear stresses at the base of the crustal layer, lateral differences in GPE within the layer, are balanced solely by gradients in horizontal deviatoric stress [Flesch et al., 2001, 2006]. We solve the force-balance equations for the minimum deviatoric stress field associated with gradients of GPE. This deviatoric stress field calibrates the magnitude of deviatoric stresses within the seismogenic layer. We then solve for stress field boundary conditions associated with the stress field contributions from sources outside the modeled region that together with the minimum solution from GPE differences provide a best match with stress field indicators within western North America. In order to infer appropriate stress field indicators we develop a long-term kinematic strain rate and velocity field model. Where we use this strain rate field we assume that the relationship between deviatoric stress directions and kinematic strain rate directions is isotropic. In our calculations the seismogenic layer extends from the surface to either a uniform depth below sea

  1. Microstructure, thickness and sheet resistivity of Cu/Ni thin film produced by electroplating technique on the variation of electrolyte temperature

    Science.gov (United States)

    Toifur, M.; Yuningsih, Y.; Khusnani, A.

    2018-03-01

    In this research, it has been made Cu/Ni thin film produced with electroplating technique. The deposition process was done in the plating bath using Cu and Ni as cathode and anode respectively. The electrolyte solution was made from the mixture of HBrO3 (7.5g), NiSO4 (100g), NiCl2 (15g), and aquadest (250 ml). Electrolyte temperature was varied from 40°C up to 80°C, to make the Ni ions in the solution easy to move to Cu cathode. The deposition was done during 2 minutes on the potential of 1.5 volt. Many characterizations were done including the thickness of Ni film, microstructure, and sheet resistivity. The results showed that at all samples Ni had attacked on the Cu substrate to form Cu/Ni. The raising of electrolyte temperature affected the increasing of Ni thickness that is the Ni thickness increase with the increasing electrolyte temperature. From the EDS spectrum, it can be informed that samples already contain Ni and Cu elements and NiO and CuO compounds. Addition element and compound are found for sample Cu/Ni resulted from 70° electrolyte temperature of Ni deposition, that are Pt and PtO2. From XRD pattern, there are several phases which have crystal structure i.e. Cu, Ni, and NiO, while CuO and PtO2 have amorphous structure. The sheet resistivity linearly decreases with the increasing electrolyte temperature.

  2. Effects of crystallization on structural and dielectric properties of thin amorphous films of (1 - x)BaTiO3-xSrTiO3 (x=0-0.5, 1.0)

    Science.gov (United States)

    Kawano, H.; Morii, K.; Nakayama, Y.

    1993-05-01

    The possibilities for fabricating solid solutions of (Ba1-x,Srx)TiO3 (x≤0.5,1.0) by crystallization of amorphous films and for improving their dielectric properties by adjusting the Sr content were investigated. Thin amorphous films were prepared from powder targets consisting of mixtures of BaTiO3 and SrTiO3 by sputtering with a neutralized Ar-ion beam. The amorphous films crystallized into (Ba1-x, Srx)TiO3 solid solutions with a cubic perovskite-type structure after annealing in air at 923 K for more than 1 h. The Debye-type dielectric relaxation was observed for the amorphous films, whereas the crystallized films showed paraelectric behavior. The relative dielectric constants were of the order of 20 for the amorphous samples, but increased greatly after crystallization to about 60-200, depending on the composition; a larger increase in the dielectric constant was observed in the higher Sr content films, in the range x≤0.5, which could be correlated with an increase in the grain size of the crystallites. The crystallization processes responsible for the difference in the grain size are discussed based on the microstructural observations.

  3. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

    2013-01-08

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

  4. Method of using sacrificial materials for fabricating internal cavities in laminated dielectric structures

    Science.gov (United States)

    Peterson, Kenneth A [Albuquerque, NM

    2009-02-24

    A method of using sacrificial materials for fabricating internal cavities and channels in laminated dielectric structures, which can be used as dielectric substrates and package mounts for microelectronic and microfluidic devices. A sacrificial mandrel is placed in-between two or more sheets of a deformable dielectric material (e.g., unfired LTCC glass/ceramic dielectric), wherein the sacrificial mandrel is not inserted into a cutout made in any of the sheets. The stack of sheets is laminated together, which deforms the sheet or sheets around the sacrificial mandrel. After lamination, the mandrel is removed, (e.g., during LTCC burnout), thereby creating a hollow internal cavity in the monolithic ceramic structure.

  5. Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

    Science.gov (United States)

    Lin, Yow-Jon; Hung, Cheng-Chun

    2018-02-01

    The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

  6. Thin Film Williamson Nanofluid Flow with Varying Viscosity and Thermal Conductivity on a Time-Dependent Stretching Sheet

    Directory of Open Access Journals (Sweden)

    Waris Khan

    2016-11-01

    Full Text Available This article describes the effect of thermal radiation on the thin film nanofluid flow of a Williamson fluid over an unsteady stretching surface with variable fluid properties. The basic governing equations of continuity, momentum, energy, and concentration are incorporated. The effect of thermal radiation and viscous dissipation terms are included in the energy equation. The energy and concentration fields are also coupled with the effect of Dufour and Soret. The transformations are used to reduce the unsteady equations of velocity, temperature and concentration in the set of nonlinear differential equations and these equations are tackled through the Homotopy Analysis Method (HAM. For the sake of comparison, numerical (ND-Solve Method solutions are also obtained. Special attention has been given to the variable fluid properties’ effects on the flow of a Williamson nanofluid. Finally, the effect of non-dimensional physical parameters like thermal conductivity, Schmidt number, Williamson parameter, Brinkman number, radiation parameter, and Prandtl number has been thoroughly demonstrated and discussed.

  7. Experimental investigation and finite element simulation of laser beam welding induced residual stresses and distortions in thin sheets of AA 6056-T4

    International Nuclear Information System (INIS)

    Zain-ul-abdein, Muhammad; Nelias, Daniel; Jullien, Jean-Francois; Deloison, Dominique

    2010-01-01

    Laser beam welding has recently found its application in the fabrication of aircraft structures where fuselage panels, made of thin sheets of AA 6056-T4 (an aluminium alloy), are welded with stiffeners of the same material in a T-joint configuration. The present work simulates laser beam welding induced residual stresses and distortions using industrially employed thermal and mechanical boundary conditions. Various measurements performed on small-scale welded test specimens provide a database of experimental results that serves as a benchmark for qualification of the simulation results. The welding simulation is performed with the commercial finite element software Abaqus and a Fortran programme encoding a conical heat source with Gaussian volumetric distribution of flux. A sequentially coupled temperature-displacement analysis is undertaken to simulate the weld pool geometry, transient temperature and displacement fields. The material is assumed to follow an elasto-plastic law with isotropic hardening behaviour (von Mises plasticity model). A comparison between the experimental and simulation results shows a good agreement. Finally, the residual stress and strain states in a T-joint are predicted.

  8. Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

    2014-05-15

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

  9. Fabrication of micro-channel arrays on thin metallic sheet using internal fluid pressure: Investigations on size effects and development of design guidelines

    Energy Technology Data Exchange (ETDEWEB)

    Mahabunphachai, Sasawat [NSF I/UCR Center for Precision Forming, Department of Mechanical Engineering, Virginia Commonwealth University, Richmond, VA 23284 (United States); Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Koc, Muammer [NSF I/UCR Center for Precision Forming, Department of Mechanical Engineering, Virginia Commonwealth University, Richmond, VA 23284 (United States)

    2008-01-03

    Micro-feature (channel, protrusion, cavity, etc.) arrays on large area-thin metallic sheet alloys are increasingly needed for compact and integrated heat/mass transfer applications (such as fuel cells and fuel processors) that require high temperature resistance, corrosion resistance, good electrical/thermal conductivity, etc. The performance of these micro-feature arrays mainly affects the volume flow velocity of the reactants inside the arrays which directly controls the rate of convection mass/heat transport. The key factors that affect the flow velocity include channel size and shape, flow field pattern, flow path length, fluid pressure, etc. In this study, we investigated these micro-feature arrays from the manufacturability perspective since it is also an important factor to be considered in the design process. Internal fluid pressure (hydroforming) technique is investigated in this study with the specific goals to, first, understand if the so-called ''size effects'' (grain vs. feature size) are effective on the manufacturability of thin metallic sheet into micro-channels, and second, to establish design guidelines for the micro-channel hydroforming technique for robust mass production conditions. Thin stainless steel 304 blanks of 0.051 mm thick with three different grain sizes of 9.3, 10.6, and 17.0 {mu}m were used in hydroforming experiments to form micro-channels with the dimensions between 0.46-1.33 and 0.15-0.98 mm in width and height, respectively. Based on the experimental results, the effect of the grain size on the channel formability was found to be insignificant for the grain size range used in this study. On the other hand, the effect of the channel (feature) size was shown to dominate the overall formability. In addition, FE models of the process were developed and validated with the experimental results, then used to conduct a parametric study to establish micro-channel design guidelines. The results from the parametric

  10. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  11. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  12. Ellipsometry with phase and azimuth modulation: Investigation of the dielectric constant of thin films of Th and Ag deposited onto Au electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chao, F; Costa, M

    1981-08-07

    Ellipsometry with phase and azimuth modulation was used to measure the variations with coverage in the dielectric constant epsilonsub(f) = epsilon/sub 1/ - iepsilon/sub 2/ of thin films of thallium and silver deposited onto polycrystalline gold electrodes. In the underpotential deposition (UPD) zone the epsilon/sub 2/ versus theta curves for both systems present maxima at theta approx. equal to 0.5 which are associated with points of inflexion on the epsilon/sub 1/ versus theta curves; these may correspond to a transition between two two-dimensional structures, one of which occurs for theta < 0.5 and the other for theta > 0.5. A change in the direction of the variations in epsilon/sub 1/ versus theta and epsilon/sub 2/ versus theta corresponds to the beginning of nucleation. It takes place at theta approx. equal to 1 for the Tl/sup +/ - Au system and at theta approx. equal to 0.5 for Ag/sup +/ - Au. For silver coverage, the more condensed two-dimensional structure seems to include metallic nuclei. When theta > 1, at the same coverage different values of epsilon/sub 1/ and epsilon/sub 2/ are observed according to the rate of deposition, i.e. according to the size of the crystallites. The limiting values of epsilonsub(f) are in good agreement with the values determined in vacuum and reported in the literature. For wavelengths lambda > 500 nm, the results are interpreted quantitatively through Drude relations assuming that both the surface density N of the free electrons and their relaxation time tau vary with theta. For Tl/sup +/ - Au the variation of N in the UPD zone corresponds to a residual charge q = 0.29 on the thallium adatom (..delta..N = 5.8 x 10/sup 22/ cm/sup -3/ for theta = 1), whereas for Ag/sup +/ - Au the residual charge on the adatom is negligible. For the thallium film the variation in tau implies an increase in the surface diffusivity with theta in the UPD zone and a decrease after the first monolayer. For the silver films the specularity of the

  13. Tunability, dielectric, and piezoelectric properties of Ba{sub (1−x)}Ca{sub x}Ti{sub (1−y)}Zr{sub y}O{sub 3} ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Daumont, C. J. M., E-mail: christophe.daumont@univ-tours.fr; Le Mouellic, E.; Negulescu, B.; Wolfman, J. [Laboratoire GREMAN, UMR7347 CNRS, Faculté de Sciences et Techniques, Université François Rabelais, 37200 Tours (France); Simon, Q.; Payan, S.; Maglione, M. [Institute of Condensed Matter Chemistry of Bordeaux, ICMCB-CNRS, Université de Bordeaux, 33608 Pessac Cedex (France); Gardes, P.; Poveda, P. [STMicroelectronics, 10 rue Thalès de Milet, 37071 Tours Cedex (France)

    2016-03-07

    Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under electric field, are widely used in electronics for RF tunable applications (e.g., antenna impedance matching). Current devices use barium strontium titanate as the tunable dielectric, and the need for performance enhancement of the tunable element is the key for device improvement. We report here on libraries of Ba{sub 0.97}Ca{sub 0.03}Ti{sub 1−x}Zr{sub x}O{sub 3} thin films (0 ≤ x ≤ 27%) with a thickness of about 130 nm deposited on IrO{sub 2}/SiO{sub 2}/Si substrates using combinatorial pulsed laser deposition allowing for gradients of composition on one sample. A total of 600 capacitors on a single sample were characterized in order to statistically investigate the dielectric properties. We show that the tunabilty is maximum at intermediate compositions, reaching values up to 60% for an electric field of about 400 kV cm{sup −1}. We attribute the high tunability in the intermediate compositions to the paraelectric-ferroelectric phase transition, which is brought down to room temperature by the addition of Zr. In addition, the piezoelectric coefficient is found to be decreasing with increasing Zr content.

  14. (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

    Science.gov (United States)

    Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

    1994-03-01

    (Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

  15. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  16. Hybrid Piezoelectric/Fiber-Optic Sensor Sheets

    Science.gov (United States)

    Lin, Mark; Qing, Xinlin

    2004-01-01

    Hybrid piezoelectric/fiber-optic (HyPFO) sensor sheets are undergoing development. They are intended for use in nondestructive evaluation and long-term monitoring of the integrity of diverse structures, including aerospace, aeronautical, automotive, and large stationary ones. It is anticipated that the further development and subsequent commercialization of the HyPFO sensor systems will lead to economic benefits in the form of increased safety, reduction of life-cycle costs through real-time structural monitoring, increased structural reliability, reduction of maintenance costs, and increased readiness for service. The concept of a HyPFO sensor sheet is a generalization of the concept of a SMART Layer(TradeMark), which is a patented device that comprises a thin dielectric film containing an embedded network of distributed piezoelectric actuator/sensors. Such a device can be mounted on the surface of a metallic structure or embedded inside a composite-material structure during fabrication of the structure. There is has been substantial interest in incorporating sensors other than piezoelectric ones into SMART Layer(TradeMark) networks: in particular, because of the popularity of the use of fiber-optic sensors for monitoring the "health" of structures in recent years, it was decided to incorporate fiber-optic sensors, giving rise to the concept of HyPFO devices.

  17. Dielectric functions and energy band gap variation studies of manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films using spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, Prikshit, E-mail: pgautam.phy.du@gmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Department of Physics Kirori Mal College, University of Delhi, Delhi 110007 (India); Sachdeva, Anupama [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P., E-mail: ram_tandon@hotmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India)

    2014-12-25

    Highlights: • Mn Doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. • The optical properties of BLT and Mn modified BLT thin films were investigated by using spectroscopic ellipsometry. • A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions. • The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content. - Abstract: Single phase polycrystalline Mn-modified Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were prepared by chemical solution deposition method using spin coating technique on Pt/Ti/SiO{sub 2}/Si (1 0 0) substrates. Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. The optical properties of BLT and Mn modified BLT thin films were investigated at room temperature by using spectroscopic ellipsometry (SE) in the energy range 0.72–6.2 eV. A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions of these films where a shift to the lower energy side with Mn doping is seen. The full width at half maxima (FWHM) (Γ) of dielectric function is found to increase with Mn doping. This increase in FWHM may be attributed to the increase in the trap density in forbidden band which consequently decreases the value of direct optical band gap (Eg{sup d}). The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content in the studied composition range. This decrease in Eg{sup d} with doping may be attributed to the variation in the defect concentration present in the structure.

  18. A NEW TREND IN MAGNETIC-PULSE METAL WORKING ASSOCIATED WITH THIN-WALLED SHEET METAL ATTRACTION. HISTORY AND DEVELOPMENT PROSPECTS

    Directory of Open Access Journals (Sweden)

    A.V. Gnatov

    2013-04-01

    Full Text Available Within the scope of this article, a summary is presented on the main world achievements of the new trend in magnetic-pulse metal working associated with attraction of specified sheet metal sections in vehicle production and repair. The importance of the new trend has been justified, its basic sources disclosed. Alternative straightening methods for damaged sheet metals are given.

  19. Experimental Research on the Impact of Thin-Wall Ratio and the Fillet Radius of Forming Roller on the Limiting Spinning Ratio of AMS 5504 Sheets

    Directory of Open Access Journals (Sweden)

    Kut S.

    2017-12-01

    Full Text Available Results of experimental investigations of metal spinning process of AMS 5504 sheets. cylindrical drawpieces with use of discs-shaped sheet with various diameter and thickness were shown in this work. Tests were performed on two roller metal spinning machine of a vertical axis Leifeld SFC 800 V500.

  20. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  1. Magnetically tunable dielectric, impedance and magnetoelectric response in MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3} composites thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bala, Kanchan, E-mail: bala.kanchan1987@gmail.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India); Kotnala, R.K. [CSIR, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Negi, N.S., E-mail: nsn_phy_hpu@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India)

    2017-02-15

    We have synthesized piezomagnetic–piezoelectric composites thin films MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3}, where x=0.1, 0.2, and 0.3, using the metalorganic deposition (MOD) reaction method. The structural and microstructural analysis using the X-ray diffraction (XRD), AFM, and SEM reveals the presence of homogenous growth of both pervoskite and spinel phases in the composite films. Our results show that all the composites films exhibit good multiferroic as well as considerable magnetoelectric coupling. The impedance (Z′ and Z″) and electrical modulus (M′ and M″) Nyquist plots show distinct electrical responses with the magnetic field. Our analyses suggest that this electrical response arises due to the coexistence of the high resistive phase and the comparatively conductive phase in the MFO/PST composite films. The maximum magnetoelectric coefficient (α) is found to be 4.29 V Oe{sup −1} cm{sup −1} and 2.82 V Oe{sup −1} cm{sup −1} for compositions x=0.1 and 0.2. These values are substantially larger than those reported for bilayer composites thin films in literature and make them interesting for room temperature device applications. - Highlights: • Influence of Sr doping on multiferroic and magnetoelectric properties composites thin films of MnFe{sub 2}O{sub 4} and (Pb, Sr)TiO{sub 3}. • Dielectric constant and dielectric loss with application of magnetic field. • Magnetically tunable AC electrical properties. • Magnetoelectric coupling in MnFe{sub 2}O{sub 4}/(Pb, Sr)TiO{sub 3} composite films by passive method.

  2. The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

    Science.gov (United States)

    Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

    2014-07-01

    We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a fatigue in ferroelectric materials.

  3. Post Curing as an Effective Means of Ensuring the Long-term Reliability of PDMS Thin Films for Dielectric Elastomer Applications

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    2017-01-01

    ’s moduli at 5% strain increase with post curing. Furthermore, the determined dielectric breakdown parameters from Weibull analyses showed that greater electrical stability and reliability could be achieved by post curing the PDMS films before usage, and this method therefore paves a way toward more...

  4. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  5. Decontamination sheet

    International Nuclear Information System (INIS)

    Hirose, Emiko; Kanesaki, Ken.

    1995-01-01

    The decontamination sheet of the present invention is formed by applying an adhesive on one surface of a polymer sheet and releasably appending a plurality of curing sheets. In addition, perforated lines are formed on the sheet, and a decontaminating agent is incorporated in the adhesive. This can reduce the number of curing operation steps when a plurality steps of operations for radiation decontamination equipments are performed, and further, the amount of wastes of the cured sheets, and operator's exposure are reduced, as well as an efficiency of the curing operation can be improved, and propagation of contamination can be prevented. (T.M.)

  6. Center for dielectric studies

    Science.gov (United States)

    Cross, L. E.; Newnham, R. E.; Biggers, J. V.

    1984-05-01

    This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

  7. Data base of radiation-resistant dielectric and insulating materials

    International Nuclear Information System (INIS)

    Hama, Yoshimasa; Sunazuka, Hideo; Nashiyama, Isamu; Kakuta, Tsunemi.

    1987-01-01

    In the data base of radiation-resistant dielectric and insulating materials, the data format contains such items as to give the summary; the data sheet contains the data in concrete form of respective properties from the references; the sheet of references contains the references in the former two. In the above three, there are attached code No., data sheet No., reference No. and key words. In the three areas as radiation-resistant dielectric and insulating materials, i.e., organic materials, inorganic materials and optical fibers, the following are explained: data format, data sheet and objectives. (Mori, K.)

  8. Fast for sure: new developments in laser beam cutting of thin sheet metal; Mit Sicherheit schnell: neue Entwicklungen zum Laserstrahlschneiden von Fein- und Feinstblechen

    Energy Technology Data Exchange (ETDEWEB)

    Petring, D.; Schneider, F.; Thelen, C.; Poprawe, R.l [Fraunhofer-Institut fuer Lasertechnik (ILT), Aachen (Germany)

    1999-04-01

    Presently laser beam cutting is a rapidly developing technology. New laser sources with higher power and improved beam quality as well as the modern drive and control equipment together with advanced process developments allow a significant increase in cutting speed at excellent quality features. Recent results in laser beam slitting of sheet metal coils and in fast cutting of car body sheets illustrate this trend. It will be continued be even higher powers and new types of lasers. (orig.)

  9. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

  10. A tubular dielectric elastomer actuator: Fabrication, characterization and active vibration isolation

    DEFF Research Database (Denmark)

    Sarban, R.; Jones, R. W.; Mace, B. R.

    2011-01-01

    This contribution reviews the fabrication, characterization and active vibration isolation performance of a core-free rolled tubular dielectric elastomer (DE) actuator, which has been designed and developed by Danfoss PolyPower A/S. PolyPower DE material, PolyPower (TM), is produced in thin sheets...... of 80 mu m thickness with corrugated metallic electrodes on both sides. Tubular actuators are manufactured by rolling the DE sheets in a cylindrical shape. The electromechanical characteristics of such actuators are modeled based on equilibrium pressure equation. The model is validated with experimental...... the dominant dynamic characteristics of the core-free tubular actuator. It has been observed that all actuators have similar dynamic characteristics in a frequency range up to 1 kHz. A tubular actuator is then used to provide active vibration isolation (AVI) of a 250 g mass subject to shaker generated 'ground...

  11. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  12. The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

    Science.gov (United States)

    Wu, Chien-Hung; Huang, Bo-Wen; Chang, Kow-Ming; Wang, Shui-Jinn; Lin, Jian-Hong; Hsu, Jui-Mei

    2016-06-01

    The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).

  13. Dynamics of Radially Expanding Liquid Sheets

    Science.gov (United States)

    Majumdar, Nayanika; Tirumkudulu, Mahesh S.

    2018-04-01

    The process of atomization often involves ejecting thin liquid sheets at high speeds from a nozzle that causes the sheet to flap violently and break up into fine droplets. The flapping of the liquid sheet has long been attributed to the sheet's interaction with the surrounding gas phase. Here, we present experimental evidence to the contrary and show that the flapping is caused by the thinning of the liquid sheet as it spreads out from the nozzle exit. The measured growth rates of the waves agree remarkably well with the predictions of a recent theory that accounts for the sheet's thinning but ignores aerodynamic interactions. We anticipate these results to not only lead to more accurate predictions of the final drop-size distribution but also enable more efficient designs of atomizers.

  14. Dielectric properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu; Pokhodnya, Konstantin

    2015-11-01

    Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

  15. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of application type new structure thin film solar cells (Development of production technology of high efficiency hybrid thin films/sheet solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, (Kokoritsu hybrid gata hakumaku / sheet taiyodenchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of realizing low cost and high efficiency hybrid thin films/sheet solar cells, the R and D were carried out, and the FY 2000 results were reported. As to the formation technology of the upper cell, the following technologies were developed and the results contributory to the heightening of efficiency were obtained: technology for improvement of cell characteristics by gap widening of p layer, technology for optimization of formation conditions of i layer corresponding to the hybrid solar cell, technology for heightening of current by the intermediate ZnO layer just under the upper cell. Relating to the development of formation technology of high quality microcrystal thin films, it was indicated that the microcrystal silicon thin film had the conformity effective also for polycrystal silicon, and at the same time, the conversion efficiency of 12.8% and release voltage of 0.579V were obtained by the cell using the cast polycrystal board. In the thin film/polycrystal sheet hybrid solar cell in which all these technologies were integrated, the conversion efficiency of 12.0% was achieved, and the possibility was verified of achieving the target efficiency of 14% by further improvement of FF. (NEDO)

  16. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  17. Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

    Energy Technology Data Exchange (ETDEWEB)

    Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin; Saad, Ismail; Ghosh, Bablu K.; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia)

    2015-08-28

    3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMA layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.

  18. On the dielectric and optical properties of surface-anchored metal-organic frameworks: A study on epitaxially grown thin films

    Science.gov (United States)

    Redel, Engelbert; Wang, Zhengbang; Walheim, Stefan; Liu, Jinxuan; Gliemann, Hartmut; Wöll, Christof

    2013-08-01

    We determine the optical constants of two highly porous, crystalline metal-organic frameworks (MOFs). Since it is problematic to determine the optical constants for the standard powder modification of these porous solids, we instead use surface-anchored metal-organic frameworks (SURMOFs). These MOF thin films are grown using liquid phase epitaxy (LPE) on modified silicon substrates. The produced SURMOF thin films exhibit good optical properties; these porous coatings are smooth as well as crack-free, they do not scatter visible light, and they have a homogenous interference color over the entire sample. Therefore, spectroscopic ellipsometry (SE) can be used in a straightforward fashion to determine the corresponding SURMOF optical properties. After careful removal of the solvent molecules used in the fabrication process as well as the residual water adsorbed in the voids of this highly porous solid, we determine an optical constant of n = 1.39 at a wavelength of 750 nm for HKUST-1 (stands for Hong Kong University of Science and Technology-1; and was first discovered there) or [Cu3(BTC)2]. After exposing these SURMOF thin films to moisture/EtOH atmosphere, the refractive index (n) increases to n = 1.55-1.6. This dependence of the optical properties on water/EtOH adsorption demonstrates the potential of such SURMOF materials for optical sensing.

  19. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  20. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  1. Antibubbles and fine cylindrical sheets of air

    NARCIS (Netherlands)

    Beilharz, D.; Guyon, A.; Li, E.Q.; Thoraval, Marie-Jean; Thoroddsen, S.T.

    2015-01-01

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a

  2. Full-Wave Analysis of the Shielding Effectiveness of Thin Graphene Sheets with the 3D Unidirectionally Collocated HIE-FDTD Method

    Directory of Open Access Journals (Sweden)

    Arne Van Londersele

    2017-01-01

    Full Text Available Graphene-based electrical components are inherently multiscale, which poses a real challenge for finite-difference time-domain (FDTD solvers due to the stringent time step upper bound. Here, a unidirectionally collocated hybrid implicit-explicit (UCHIE FDTD method is put forward that exploits the planar structure of graphene to increase the time step by implicitizing the critical dimension. The method replaces the traditional Yee discretization by a partially collocated scheme that allows a more accurate numerical description of the material boundaries. Moreover, the UCHIE-FDTD method preserves second-order accuracy even for nonuniform discretization in the direction of collocation. The auxiliary differential equation (ADE approach is used to implement the graphene sheet as a dispersive Drude medium. The finite grid is terminated by a uniaxial perfectly matched layer (UPML to permit open-space simulations. Special care is taken to elaborate on the efficient implementation of the implicit update equations. The UCHIE-FDTD method is validated by computing the shielding effectiveness of a typical graphene sheet.

  3. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  4. Substrate-induced dielectric polarization in thin films of lead-free (Sr0.5Bi0.5)2Mn2-xTixO6-δ perovskites grown by pulsed laser deposition

    Science.gov (United States)

    Álvarez-Serrano, I.; Ruiz de Larramendi, I.; López, M. L.; Veiga, M. L.

    2017-03-01

    Thin films of SrBiMn2-xTixO6-δ have been fabricated by Pulsed Laser Deposition on SrTiO3 [100] and [111] substrates. Their texture, width, homogeneity and morphology are evaluated by means of XRD, SEM, XPS, whereas complex impedance spectroscopy is employed to analyze their electrical response. The thickness values range between 80 and 900 nm depending on the experimental conditions. The epitaxial growing could be interpreted in terms of two contributions of microstructural origin: a matrix part and some polycrystalline surface formations (hemi-spheres). Texture studies suggest a fiber-type orientated morphology coherently with the Scanning Electron Microscopy images. XPS analyses indicate a segregation regarding A-sublattice cations, which features depend on the substrate orientation. This segregation could be connected to the development of nanopolar regions. Impedance data show the electrical polarization in the samples to be enhanced compared to bulk response of corresponding powdered samples. A relaxor behavior which fits a Vogel-Fulcher law is obtained for x = 0.50 whereas an almost frequency-independent relaxor ferroelectric behavior is registered for the thinnest film of x = 0.25 composition grown on SrTiO3 [111] substrate. The influence of compositional and structural aspects in the obtained dielectric response is analyzed.

  5. Anatase TiO2 hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

    International Nuclear Information System (INIS)

    Wu, Dapeng; Zhang, Shuo; Jiang, Shiwei; He, Jinjin; Jiang, Kai

    2015-01-01

    Graphical abstract: TiO 2 hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO 2 hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell

  6. Anatase TiO{sub 2} hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dapeng, E-mail: dpengwu@126.com [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China); Zhang, Shuo; Jiang, Shiwei; He, Jinjin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Jiang, Kai [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China)

    2015-03-05

    Graphical abstract: TiO{sub 2} hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO{sub 2} hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell.

  7. Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

    International Nuclear Information System (INIS)

    Ma, Chunrui; Wu, Judy; Ma, Beihai; Mi, Shao-Bo; Liu, Ming

    2014-01-01

    High quality c-axis oriented epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films were fabricated using pulsed laser deposition on (001) LaAlO 3 substrates with conductive LaNiO 3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices

  8. Construction of highly ordered lamellar nanostructures through Langmuir-Blodgett deposition of molecularly thin titania nanosheets tens of micrometers wide and their excellent dielectric properties.

    Science.gov (United States)

    Akatsuka, Kosho; Haga, Masa-aki; Ebina, Yasuo; Osada, Minoru; Fukuda, Katsutoshi; Sasaki, Takayoshi

    2009-05-26

    Exfoliated unilamellar titania nanosheets of Ti(0.87)O(2) with a lateral size of 10-30 microm were deposited layer-by-layer onto various substrates by Langmuir-Blodgett procedure to produce a highly ordered lamellar nanofilms. The nanosheets dispersed in an aqueous suspension containing quaternary ammonium ions as a supporting electrolyte floated spontaneously at the air/liquid interface, and they were successfully transferred onto the substrate after surface compression. Neat tiling of the nanosheets could be realized at an optimized surface pressure. The film thus obtained was exposed to UV light to turn the substrate surface hydrophilic, which was helpful for stable repetition of monolayer deposition. Layer-by-layer growth was confirmed by UV-visible absorption spectra, which showed progressive enhancement of an absorption band due to the nanosheet. Cross-sectional transmission electron microscopy images visualized the ultrathin film homogeneously deposited on the substrate surface and a lamellar fringe of the layer-by-layer assembled nanosheets was clearly resolved at a higher magnification. X-ray diffraction data on the films showed sharp basal reflections up to the seventh order, and Williamson-Hall analysis of the pattern indicated that the film was coherent across the total thickness with respect to X-ray and that the lattice strain was extremely small. In addition, the first basal reflection was accompanied by small satellite peaks, which are accounted for by the Laue interference function. All these features clearly indicate the formation of a highly ordered lamellar nanostructure of the titania nanosheets comparable to artificial lattice films produced via modern vapor-phase deposition processes. The obtained films showed superior dielectric and insulating properties as a reflection of the highly organized film nanoarchitecture.

  9. An Approach for Measuring the Dielectric Strength of OLED Materials

    Directory of Open Access Journals (Sweden)

    Sujith Sudheendran Swayamprabha

    2018-06-01

    Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

  10. Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry

    International Nuclear Information System (INIS)

    Lizana, A; Foldyna, M; Garcia-Caurel, E; Stchakovsky, M; Georges, B; Nicolas, D

    2013-01-01

    High sensitivity of spectroscopic ellipsometry and reflectometry for the characterization of thin films can strongly decrease when layers, typically metals, absorb a significant fraction of the light. In this paper, we propose a solution to overcome this drawback using total internal reflection ellipsometry (TIRE) and exciting a surface longitudinal wave: a plasmon-polariton. As in the attenuated total reflectance technique, TIRE exploits a minimum in the intensity of reflected transversal magnetic (TM) polarized light and enhances the sensitivity of standard methods to thicknesses of absorbing films. Samples under study were stacks of three films, ZnO : Al/Ag/ZnO : Al, deposited on glass substrates. The thickness of the silver layer varied from sample to sample. We performed measurements with a UV–visible phase-modulated ellipsometer, an IR Mueller ellipsometer and a UV–NIR reflectometer. We used the variance–covariance formalism to evaluate the sensitivity of the ellipsometric data to different parameters of the optical model. Results have shown that using TIRE doubled the sensitivity to the silver layer thickness when compared with the standard ellipsometry. Moreover, the thickness of the ZnO : Al layer below the silver layer can be reliably quantified, unlike for the fit of the standard ellipsometry data, which is limited by the absorption of the silver layer. (paper)

  11. Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry

    Science.gov (United States)

    Lizana, A.; Foldyna, M.; Stchakovsky, M.; Georges, B.; Nicolas, D.; Garcia-Caurel, E.

    2013-03-01

    High sensitivity of spectroscopic ellipsometry and reflectometry for the characterization of thin films can strongly decrease when layers, typically metals, absorb a significant fraction of the light. In this paper, we propose a solution to overcome this drawback using total internal reflection ellipsometry (TIRE) and exciting a surface longitudinal wave: a plasmon-polariton. As in the attenuated total reflectance technique, TIRE exploits a minimum in the intensity of reflected transversal magnetic (TM) polarized light and enhances the sensitivity of standard methods to thicknesses of absorbing films. Samples under study were stacks of three films, ZnO : Al/Ag/ZnO : Al, deposited on glass substrates. The thickness of the silver layer varied from sample to sample. We performed measurements with a UV-visible phase-modulated ellipsometer, an IR Mueller ellipsometer and a UV-NIR reflectometer. We used the variance-covariance formalism to evaluate the sensitivity of the ellipsometric data to different parameters of the optical model. Results have shown that using TIRE doubled the sensitivity to the silver layer thickness when compared with the standard ellipsometry. Moreover, the thickness of the ZnO : Al layer below the silver layer can be reliably quantified, unlike for the fit of the standard ellipsometry data, which is limited by the absorption of the silver layer.

  12. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  13. Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

  14. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  15. Infrared and THz spectroscopy of nanostructured dielectrics

    Directory of Open Access Journals (Sweden)

    Jan Petzelt

    2009-09-01

    Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

  16. Entropy Generation on Nanofluid Thin Film Flow of Eyring–Powell Fluid with Thermal Radiation and MHD Effect on an Unsteady Porous Stretching Sheet

    Directory of Open Access Journals (Sweden)

    Mohammad Ishaq

    2018-05-01

    Full Text Available This research paper investigates entropy generation analysis on two-dimensional nanofluid film flow of Eyring–Powell fluid with heat amd mass transmission over an unsteady porous stretching sheet in the existence of uniform magnetic field (MHD. The flow of liquid films are taken under the impact of thermal radiation. The basic time dependent equations of heat transfer, momentum and mass transfer are modeled and converted to a system of differential equations by employing appropriate similarity transformation with unsteady dimensionless parameters. Entropy analysis is the main focus in this work and the impact of physical parameters on the entropy profile are discussed in detail. The influence of thermophoresis and Brownian motion has been taken in the nanofluids model. An optima approach has been applied to acquire the solution of modeled problem. The convergence of the HAM (Homotopy Analysis Method has been presented numerically. The disparity of the Nusslet number, Skin friction, Sherwood number and their influence on the velocity, heat and concentration fields has been scrutinized. Moreover, for comprehension, the physical presentation of the embedded parameters are explored analytically for entropy generation and discussed.

  17. Spinomotive force induced by a transverse displacement current in a thin metal or doped-semiconductor sheet: Classical and quantum views.

    Science.gov (United States)

    Hu, Chia-Ren

    2004-03-01

    We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.

  18. Thermografic measurement of crack initiation and propagation at thin sheet joints; Rissentstehung thermometrisch ermitteln. Zerstoerungsfreie Bestimmung der Rissinitiierung in mechanisch gefuegten und widerstandpunktgeschweissten Verbindungen

    Energy Technology Data Exchange (ETDEWEB)

    Bathke, W.; Stahlfeld, G. [Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin (Germany). Fachgruppe V.5 - Sicherheit in der Fuegetechnik

    2000-07-01

    This contribution demonstrates how a thermometric procedure might be applied to determine crack initiation during fatigue testing of joints at steel sheets. The procedure is based on the measurement of the temperature increase which is produced by the heat at the respective joint caused by deformation energy. Such investigations are aimed at detection of crack initiation before it becomes visible at the specimen surface. Thermografic measurements at different mechanical joints and resistance welded spots are compared and various applications are suggested. (orig.) [German] In diesem Beitrag wird gezeigt, wie sich ein thermometrisches Verfahren einsetzen laesst, um die Rissentstehung waehrend der Dauerschwingpruefung von Stahlblechen zu erfassen. Vergleichend werden Messungen an Proben, die durch Stanznieten, Clinchen und Widerstandspunktschweissen gefuegt wurden, gegenuebergestellt. Hierzu wird die am Fuegepunkt waehrend der Pruefung in Waerme umgewandelte Formaenderungsenergie kontinuierlich in Form der Temperaturerhoehung gemessen. Ziel dieser Untersuchungen ist es, solche Temperaturerhoehungen zur Erkennung der Rissentstehung zu verwenden, bevor der Riss die Blechoberflaeche erreicht hat und visuell erkennbar wird. Zudem werden verschiedene Anwendungsmoeglichkeiten vorgeschlagen. (orig.)

  19. Polyvinylidene fluoride film as a capacitor dielectric

    Science.gov (United States)

    Dematos, H. V.

    1981-01-01

    Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

  20. Measurement and Analysis of Ultra-Thin Austenitic Stainless Steel Sheet under Biaxial Tensile Loading and In-Plane Reverse Loading

    Science.gov (United States)

    Murakoso, Satoko; Kuwabara, Toshihiko

    Biaxial tensile tests of austenitic stainless steel sheet (SUS304) 0.2mm thick have been carried out using cruciform specimens. The specimens are loaded under linear stress paths in a servo-controlled biaxial tensile testing machine. Plastic orthotropy remained coaxial with the principal stresses throughout every experiment. The successive contours of plastic work in biaxial stress space changed their shapes progressively, exemplifying differential work hardening. The geometry of the entire family of the work contours and the directions of plastic strain rates have been precisely measured and compared with those calculated using conventional yield functions. Yld2000-2d [Barlat, F., Brem, J.C., Yoon, J.W., Chung, K., Dick, R.E., Lege, D.J., Pourboghrat, F., Choi, S.H. and Chu, E., International Journal of Plasticity, Vol. 19, (2003), pp. 1297-1319.] with an exponent of 6 was capable of reproducing the general trends of the work contours and the directions of plastic strain rates with good accuracy. Furthermore, in order to quantitatively evaluate the Bauschinger effect of the test material, in-plane tension/compression tests are conducted. It was found that the non-dimensional (σ /σu) - Δɛ /(σu/ E) curves measured during unloading almost fall on a single curve and are not affected by the amount of pre-strain, where σ is the current stress during unloading, σu is the stress immediately before unloading, Δɛ (< 0) is the total strain increment during unloading.

  1. Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Jian; Batra, Vaishali; Han, Hui; Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Pandey, Raghvendar K. [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-09-15

    The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

  2. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  3. Inertial polarization of dielectrics

    OpenAIRE

    Zavodovsky, A. G.

    2011-01-01

    It was proved that accelerated motion of a linear dielectric causes its polarization. Accelerated translational motion of a dielectric's plate leads to the positive charge of the surface facing the direction of motion. Metal plates of a capacitor were used to register polarized charges on a dielectric's surface. Potential difference between the capacitor plates is proportional to acceleration, when acceleration is constant potential difference grows with the increase of a dielectric's area, o...

  4. Characterizations of biodegradable epoxy-coated cellulose nanofibrils (CNF) thin film for flexible microwave applications

    Science.gov (United States)

    Hongyi Mi; Chien-Hao Liu; Tzu-Husan Chang; Jung-Hun Seo; Huilong Zhang; Sang June Cho; Nader Behdad; Zhenqiang Ma; Chunhua Yao; Zhiyong Cai; Shaoqin Gong

    2016-01-01

    Wood pulp cellulose nanofibrils (CNF) thin film is a novel recyclable and biodegradable material. We investigated the microwave dielectric properties of the epoxy coated-CNF thin film for potential broad applications in flexible high speed electronics. The characterizations of dielectric properties were carried out in a frequency range of 1–10 GHz. The dielectric...

  5. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    plate capacitor will reduce the net field to an unprecedented extent. This family of materials can form materials with dielectric values orders of... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...circuit modeling, from [44], and B) SDM capacitor charge and discharge ...................................................22 Figure 15. Dielectric

  6. Plasma polymerized high energy density dielectric films for capacitors

    Science.gov (United States)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  7. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  8. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  9. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  10. Chlamydia - CDC Fact Sheet

    Science.gov (United States)

    ... Archive STDs Home Page Bacterial Vaginosis (BV) Chlamydia Gonorrhea Genital Herpes Hepatitis HIV/AIDS & STDs Human Papillomavirus ( ... sheet Pelvic Inflammatory Disease (PID) – CDC fact sheet Gonorrhea – CDC fact sheet STDs Home Page Bacterial Vaginosis ( ...

  11. Predicting Pulsar Scintillation from Refractive Plasma Sheets

    Science.gov (United States)

    Simard, Dana; Pen, Ue-Li

    2018-05-01

    The dynamic and secondary spectra of many pulsars show evidence for long-lived, aligned images of the pulsar that are stationary on a thin scattering sheet. One explanation for this phenomenon considers the effects of wave crests along sheets in the ionized interstellar medium, such as those due to Alfvén waves propagating along current sheets. If these sheets are closely aligned to our line-of-sight to the pulsar, high bending angles arise at the wave crests and a selection effect causes alignment of images produced at different crests, similar to grazing reflection off of a lake. Using geometric optics, we develop a simple parameterized model of these corrugated sheets that can be constrained with a single observation and that makes observable predictions for variations in the scintillation of the pulsar over time and frequency. This model reveals qualitative differences between lensing from overdense and underdense corrugated sheets: Only if the sheet is overdense compared to the surrounding interstellar medium can the lensed images be brighter than the line-of-sight image to the pulsar, and the faint lensed images are closer to the pulsar at higher frequencies if the sheet is underdense, but at lower frequencies if the sheet is overdense.

  12. Electrolytic Preparation of High Dielectric Thin Films

    National Research Council Canada - National Science Library

    Hultquist, A. E; Sibert, M. E

    1966-01-01

    .... Some attention is devoted to zirconates, niobates, and tantalates. In addition to barium compounds, the comparable calcium, magnesium, strontium and potassium double oxides are evaluated by the appropriate electrolytic techniques...

  13. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

    Science.gov (United States)

    Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

    2015-01-01

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

  14. GASN sheets

    International Nuclear Information System (INIS)

    2013-12-01

    This document gathers around 50 detailed sheets which describe and present various aspects, data and information related to the nuclear sector or, more generally to energy. The following items are addressed: natural and artificial radioactive environment, evolution of energy needs in the world, radioactive wastes, which energy for France tomorrow, the consequences in France of the Chernobyl accident, ammunitions containing depleted uranium, processing and recycling of used nuclear fuel, transport of radioactive materials, seismic risk for the basic nuclear installations, radon, the precautionary principle, the issue of low doses, the EPR, the greenhouse effect, the Oklo nuclear reactors, ITER on the way towards fusion reactors, simulation and nuclear deterrence, crisis management in the nuclear field, does nuclear research put a break on the development of renewable energies by monopolizing funding, nuclear safety and security, the plutonium, generation IV reactors, comparison of different modes of electricity production, medical exposure to ionizing radiations, the control of nuclear activities, food preservation by ionization, photovoltaic solar collectors, the Polonium 210, the dismantling of nuclear installations, wind energy, desalination and nuclear reactors, from non-communication to transparency about nuclear safety, the Jules Horowitz reactor, CO 2 capture and storage, hydrogen, solar energy, the radium, the subcontractors of maintenance of the nuclear fleet, biomass, internal radio-contamination, epidemiological studies, submarine nuclear propulsion, sea energy, the Three Mile Island accident, the Chernobyl accident, the Fukushima accident, the nuclear after Fukushima

  15. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  16. Electron-beam-induced conduction in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Acris, F C; Davies, P M; Lewis, T J [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

    1976-03-14

    A model for the enhanced conduction induced in dielectric films under electron bombardment while electrically stressed is discussed. It is assumed that the beam produces a virtual electrode at the end of its range in the dielectric and, as a consequence, the induced conduction is shown to depend on the properties of that part of the dielectric beyond the range of the beam. This model has also been discussed recently by Nunes de Oliviera and Gross. In the present treatment, it is shown how the model permits investigation of beam scattering and carrier generation and recombination processes. Experiments on electron-bombardment-induced conduction of thin (72 to 360 nm) films of anodic tantalum oxide are reported and it is shown that the theoretical model provides a very satisfactory explanation of all features of the results including the apparent threshold energy for enhanced conduction.

  17. Sheet, ligament and droplet formation in swirling primary atomization

    Science.gov (United States)

    Shao, Changxiao; Luo, Kun; Chai, Min; Fan, Jianren

    2018-04-01

    We report direct numerical simulations of swirling liquid atomization to understand the physical mechanism underlying the sheet breakup of a non-turbulent liquid swirling jet which lacks in-depth investigation. The volume-of-fluid (VOF) method coupled with adapted mesh refinement (AMR) technique in GERRIS code is employed in the present simulation. The mechanisms of sheet, ligament and droplet formation are investigated. It is observed that the olive-shape sheet structure is similar to the experimental result qualitatively. The numerical results show that surface tension, pressure difference and swirling effect contribute to the contraction and extension of liquid sheet. The ligament formation is partially at the sheet rim or attributed to the extension of liquid hole. Especially, the movement of hairpin vortex exerts by an anti-radial direction force to the sheet surface and leads to the sheet thinness. In addition, droplet formation is attributed to breakup of ligament and central sheet.

  18. Sheet, ligament and droplet formation in swirling primary atomization

    Directory of Open Access Journals (Sweden)

    Changxiao Shao

    2018-04-01

    Full Text Available We report direct numerical simulations of swirling liquid atomization to understand the physical mechanism underlying the sheet breakup of a non-turbulent liquid swirling jet which lacks in-depth investigation. The volume-of-fluid (VOF method coupled with adapted mesh refinement (AMR technique in GERRIS code is employed in the present simulation. The mechanisms of sheet, ligament and droplet formation are investigated. It is observed that the olive-shape sheet structure is similar to the experimental result qualitatively. The numerical results show that surface tension, pressure difference and swirling effect contribute to the contraction and extension of liquid sheet. The ligament formation is partially at the sheet rim or attributed to the extension of liquid hole. Especially, the movement of hairpin vortex exerts by an anti-radial direction force to the sheet surface and leads to the sheet thinness. In addition, droplet formation is attributed to breakup of ligament and central sheet.

  19. Microscopic resolution broadband dielectric spectroscopy

    International Nuclear Information System (INIS)

    Mukherjee, S; Watson, P; Prance, R J

    2011-01-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  20. Microscopic resolution broadband dielectric spectroscopy

    Science.gov (United States)

    Mukherjee, S.; Watson, P.; Prance, R. J.

    2011-08-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  1. Effects of electron pressure anisotropy on current sheet configuration

    International Nuclear Information System (INIS)

    Artemyev, A. V.; Angelopoulos, V.; Runov, A.; Vasko, I. Y.

    2016-01-01

    Recent spacecraft observations in the Earth's magnetosphere have demonstrated that the magnetotail current sheet can be supported by currents of anisotropic electron population. Strong electron currents are responsible for the formation of very thin (intense) current sheets playing the crucial role in stability of the Earth's magnetotail. We explore the properties of such thin current sheets with hot isotropic ions and cold anisotropic electrons. Decoupling of the motions of ions and electrons results in the generation of a polarization electric field. The distribution of the corresponding scalar potential is derived from the electron pressure balance and the quasi-neutrality condition. We find that electron pressure anisotropy is partially balanced by a field-aligned component of this polarization electric field. We propose a 2D model that describes a thin current sheet supported by currents of anisotropic electrons embedded in an ion-dominated current sheet. Current density profiles in our model agree well with THEMIS observations in the Earth's magnetotail.

  2. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  3. Inductive dielectric analyzer

    International Nuclear Information System (INIS)

    Agranovich, Daniel; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri; Polygalov, Eugene

    2017-01-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions. (paper)

  4. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  5. The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

    Science.gov (United States)

    2016-02-01

    BST film capacitor devices were fabricated using physical and chemical solution deposition techniques. The typical dielectric constant of the...electrode loss, and the parallel resistor- capacitor circuit represents the capacitance and the dielectric loss, assuming lead inductance is...Thin barium strontium titanate (BST) films are being developed as dielectric film for use in tunable radio frequency (RF)/microwave applications. Thin

  6. Electrical response of relaxing dielectrics compressed by arbitrary stress pulses

    International Nuclear Information System (INIS)

    Lysne, P.C.

    1983-01-01

    The theoretical problem of the electric response of biased dielectrics and piezoelectrics subjected to planar stress pulse loading is considered. The materials are taken to exhibit dielectric relaxation in the sense that changes in the polarization induced by electric fields do not occur instantaneously with changes in the fields. While this paper considers arbitrary stress pulse loading of the specimen, examples that are amenable to projectile impact techniques are considered in detail. They are shock reverberation, thin pulse, and ramp loading experiments. It is anticipated that these experiments will play a role in investigations of dielectric relaxation caused by shock induced damage in insulators

  7. Large Dielectric Constant Enhancement in MXene Percolative Polymer Composites

    KAUST Repository

    Tu, Shao Bo

    2018-04-06

    near the percolation limit of about 15.0 wt % MXene loading, which surpasses all previously reported composites made of carbon-based fillers in the same polymer. With up to 10 wt % MXene loading, the dielectric loss of the MXene/P(VDF-TrFE-CFE) composite indicates only an approximately 5-fold increase (from 0.06 to 0.35), while the dielectric constant increased by 25 times over the same composition range. Furthermore, the ratio of permittivity to loss factor of the MXene-polymer composite is superior to that of all previously reported fillers in this same polymer. The dielectric constant enhancement effect is demonstrated to exist in other polymers as well when loaded with MXene. We show that the dielectric constant enhancement is largely due to the charge accumulation caused by the formation of microscopic dipoles at the surfaces between the MXene sheets and the polymer matrix under an external applied electric field.

  8. Microprobe metrology for direct sheet resistance and mobility characterization

    DEFF Research Database (Denmark)

    Nielsen, Peter Folmer; Petersen, Dirch Hjorth; Lin, Rong

    2012-01-01

    The M4PP measurement technique has gained increased interest from the semiconductor industry for direct sheet resistance measurements on ultra thin layers and small structures/pads. Several fully automatic microRSP probing tools are today in use for in-line sheet resistance measurements on blanket...

  9. Antibubbles and fine cylindrical sheets of air

    KAUST Repository

    Beilharz, D.

    2015-08-14

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a higher-viscosity drop onto a lower-viscosity pool, we have explored new geometries of such air films. In this way we are able to maintain stable air layers which can wrap around the entire drop to form repeatable antibubbles, i.e. spherical air layers bounded by inner and outer liquid masses. Furthermore, for the most viscous drops they enter the pool trailing a viscous thread reaching all the way to the pinch-off nozzle. The air sheet can also wrap around this thread and remain stable over an extended period of time to form a cylindrical air sheet. We study the parameter regime where these structures appear and their subsequent breakup. The stability of these thin cylindrical air sheets is inconsistent with inviscid stability theory, suggesting stabilization by lubrication forces within the submicron air layer. We use interferometry to measure the air-layer thickness versus depth along the cylindrical air sheet and around the drop. The air film is thickest above the equator of the drop, but thinner below the drop and up along the air cylinder. Based on microbubble volumes, the thickness of the cylindrical air layer becomes less than 100 nm before it ruptures.

  10. Antibubbles and fine cylindrical sheets of air

    KAUST Repository

    Beilharz, D.; Guyon, A.; Li, E.  Q.; Thoraval, M.-J.; Thoroddsen, Sigurdur T

    2015-01-01

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a higher-viscosity drop onto a lower-viscosity pool, we have explored new geometries of such air films. In this way we are able to maintain stable air layers which can wrap around the entire drop to form repeatable antibubbles, i.e. spherical air layers bounded by inner and outer liquid masses. Furthermore, for the most viscous drops they enter the pool trailing a viscous thread reaching all the way to the pinch-off nozzle. The air sheet can also wrap around this thread and remain stable over an extended period of time to form a cylindrical air sheet. We study the parameter regime where these structures appear and their subsequent breakup. The stability of these thin cylindrical air sheets is inconsistent with inviscid stability theory, suggesting stabilization by lubrication forces within the submicron air layer. We use interferometry to measure the air-layer thickness versus depth along the cylindrical air sheet and around the drop. The air film is thickest above the equator of the drop, but thinner below the drop and up along the air cylinder. Based on microbubble volumes, the thickness of the cylindrical air layer becomes less than 100 nm before it ruptures.

  11. Periodic folding of viscous sheets

    Science.gov (United States)

    Ribe, Neil M.

    2003-09-01

    The periodic folding of a sheet of viscous fluid falling upon a rigid surface is a common fluid mechanical instability that occurs in contexts ranging from food processing to geophysics. Asymptotic thin-layer equations for the combined stretching-bending deformation of a two-dimensional sheet are solved numerically to determine the folding frequency as a function of the sheet’s initial thickness, the pouring speed, the height of fall, and the fluid properties. As the buoyancy increases, the system bifurcates from “forced” folding driven kinematically by fluid extrusion to “free” folding in which viscous resistance to bending is balanced by buoyancy. The systematics of the numerically predicted folding frequency are in good agreement with laboratory experiments.

  12. Large dielectric constant ({epsilon}/{epsilon}{sub 0}>6000) Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} thin films for high-performance microwave phase shifters

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, C. M. [Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States); Rivkin, T. V. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Parilla, P. A. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Ginley, D. S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kozyrev, A. B. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Oshadchy, V. N. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Pavlov, A. S. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation)

    2000-04-03

    We deposited epitaxial Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST) films via laser ablation on MgO and LaAlO{sub 3} (LAO) substrates for tunable microwave devices. Postdeposition anneals ({approx}1100 degree sign C in O{sub 2}) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (T{sub max}) up for BST/LAO and down for BST/MgO. These substrate-dependent T{sub max} shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant ({epsilon}/{epsilon}{sub 0}{>=}6000) and tunability ({delta}{epsilon}/{epsilon}{>=}65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of {approx}45 degree sign /dB and phase shifts of {approx}400 degree sign under 500 V ({approx}13 V/{mu}m) bias, illustrating their utility for many frequency-agile microwave devices. (c) 2000 American Institute of Physics.

  13. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  14. Dielectric Modulated FET (DMFET)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

  15. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  16. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable

  17. Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

    International Nuclear Information System (INIS)

    Kheyri, A.; Nourbakhsh, Z.; Darabi, E.

    2016-01-01

    The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

  18. Effect of Fe, Co, Si and Ge impurities on optical properties of graphene sheet

    Energy Technology Data Exchange (ETDEWEB)

    Kheyri, A. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Nourbakhsh, Z., E-mail: z.nourbakhsh@sci.ui.ac.ir [Physics Department, Faculty of Science, University of Isfahan, Isfahan (Iran, Islamic Republic of); Darabi, E. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-08-01

    The electronic and linear optical properties of pure graphene and impurity-graphene (with Fe, Co, Si and Ge impurities) sheets are investigated by using the full potential linear augmented plane wave plus local orbital (FPLAPW + lo) in the framework of the density functional theory (DFT). The calculated results are obtained within the generalized gradient approximation using the Perdew–Burke–Ernzerhof scheme in the presence of spin-orbit interaction. The band structure, partial electron density of states, dielectric function, absorption coefficient, optical conductivity, extinction index, energy loss function, reflectivity and the refraction index of these sheets for parallel and perpendicular electromagnetic wave polarization to sheet are investigated. The optical conductivity of Si-graphene and Ge-graphene sheets for the parallel electromagnetic wave polarization to the sheet starts with a gap about 0.4 eV confirms that these sheets have semiconductor behavior. Also the optical spectra of these sheets are anisotropic along these two wave polarizations. The dielectric function in the static limit of pure graphene sheet for perpendicular electromagnetic wave polarization to sheet does not significant change in the presence of Si, Ge, Fe and Co impurities. The static refractive index of Fe-graphene and Co-graphene sheets for parallel electromagnetic wave polarization to sheet is much larger than the corresponding value of pure graphene sheet. - Highlights: • Graphene sheet with Fe and Co impurities is metal. • Graphene sheet with Si and Ge impurities is semiconductor with 0.2 eV energy band gap. • These sheets optical spectra have metallic behavior for perpendicular polarization. • These sheets optical spectra have semiconductor behavior for parallel polarization. • Graphene sheet with Si and Ge impurities can use for optoelectronic devices.

  19. Single clay sheets inside electrospun polymer nanofibers

    Science.gov (United States)

    Sun, Zhaohui

    2005-03-01

    Nanofibers were prepared from polymer solution with clay sheets by electrospinning. Plasma etching, as a well controlled process, was used to supply electrically excited gas molecules from a glow discharge. To reveal the structure and arrangement of clay layers in the polymer matrix, plasma etching was used to remove the polymer by controlled gasification to expose the clay sheets due to the difference in reactivity. The shape, flexibility, and orientation of clay sheets were studied by transmission and scanning electron microscopy. Additional quantitative information on size distribution and degree of exfoliation of clay sheets were obtained by analyzing electron micrograph of sample after plasma etching. Samples in various forms including fiber, film and bulk, were thinned by plasma etching. Morphology and dispersion of inorganic fillers were studied by electron microscopy.

  20. PREFACE: Dielectrics 2009: Measurement Analysis and Applications

    Science.gov (United States)

    Vaughan, Alun; Williams, Graham

    2009-07-01

    2001 the Annual Meetings focused on numerous topics, including relaxation and conduction processes in liquids, solids, liquid crystals, synthetic polymers and biopolymers, piezoelectric materials, electrets and ferroelectrets, interfacial phenomena, high field conduction and breakdown phenomena in solids, liquids and gases and, importantly, the remarkable developments in dielectric instrumentation during this period. These activities reflected the need, and willingness, to move dielectrics researches with the times. As examples of the variety and diversity of these meetings we may refer briefly to the 1981, 1989 and 1996 Meetings. The 1981 Oxford Meeting on High Field Phenomena in Dielectrics included strong themes on fundamental and practical effects of high E-fields on the dielectric and conduction behaviour of liquids and solids, electrical treeing and dielectric breakdown, non-linear dielectric effects, electrets, thin-film devices and electro-rheology. The late 1980's had seen large initiatives in the UK and globally in the general area of Molecular Electronics so, in timely fashion, this was the subject of the 1989 Meeting in Bangor. The 1996 Smart Dielectrics Meeting at Canterbury reported subsequent advances in designer materials having electro-responsive and electro-optical properties. The programme concerned electro- and photo-active materials, mainly organic, in the form of polar dielectrics, polyelectrolytes, organic semi- and photo-conductors, photo-refractive polymer films, organic ferroelectric films, liquid crystalline polymer films, piezo- and pyro-electric polymer films, electroluminescent polymers, electro-rheological fluids and non-linear optical polymer films as described by leading international scientists. The physico-chemical functions of the materials were demonstrated and interpreted in terms of fundamental molecular properties. An Archive, containing full details of all the Meetings of the DDG and the Dielectrics Society, has been placed on

  1. Standards for dielectric elastomer transducers

    International Nuclear Information System (INIS)

    Carpi, Federico; Frediani, Gabriele; Anderson, Iain; Bauer, Siegfried; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Pelrine, Ron; Lassen, Benny; Rechenbach, Björn; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O’Brien, Benjamin; Pei, Qibing

    2015-01-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation. (paper)

  2. Standards for dielectric elastomer transducers

    Science.gov (United States)

    Carpi, Federico; Anderson, Iain; Bauer, Siegfried; Frediani, Gabriele; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Lassen, Benny; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O'Brien, Benjamin; Pei, Qibing; Pelrine, Ron; Rechenbach, Björn; Rosset, Samuel; Shea, Herbert

    2015-10-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation.

  3. Experimental investigation of a 1 kA/cm² sheet beam plasma cathode electron gun.

    Science.gov (United States)

    Kumar, Niraj; Pal, Udit Narayan; Pal, Dharmendra Kumar; Prajesh, Rahul; Prakash, Ram

    2015-01-01

    In this paper, a cold cathode based sheet-beam plasma cathode electron gun is reported with achieved sheet-beam current density ∼1 kA/cm(2) from pseudospark based argon plasma for pulse length of ∼200 ns in a single shot experiment. For the qualitative assessment of the sheet-beam, an arrangement of three isolated metallic-sheets is proposed. The actual shape and size of the sheet-electron-beam are obtained through a non-conventional method by proposing a dielectric charging technique and scanning electron microscope based imaging. As distinct from the earlier developed sheet beam sources, the generated sheet-beam has been propagated more than 190 mm distance in a drift space region maintaining sheet structure without assistance of any external magnetic field.

  4. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  5. Effects of transverse temperature field nonuniformity on stress in silicon sheet growth

    Science.gov (United States)

    Mataga, P. A.; Hutchinson, J. W.; Chalmers, B.; Bell, R. O.; Kalejs, J. P.

    1987-01-01

    Stress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.

  6. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  7. Casimir interactions between graphene sheets and metamaterials

    International Nuclear Information System (INIS)

    Drosdoff, D.; Woods, Lilia M.

    2011-01-01

    The Casimir force between graphene sheets and metamaterials is studied. Theoretical results based on the Lifshitz theory for layered, planar, two-dimensional systems in media are presented. We consider graphene-graphene, graphene-metamaterial, and metal-graphene-metamaterial configurations. We find that quantum effects of the temperature-dependent force are not apparent until the submicron range. In contrast to results with bulk dielectric and bulk metallic materials, no Casimir repulsion is found when graphene is placed on top of a magnetically active metamaterial substrate, regardless of the strength of the low-frequency magnetic response. In the case of the metal-graphene-metamaterial setting, repulsion between the metamaterial and the metal-graphene system is possible only when the dielectric response from the metal contributes significantly.

  8. Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

    OpenAIRE

    Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.

    2010-01-01

    Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated ...

  9. Dielectric function in the spectral range (0.5–8.5)eV of an (AlxGa1−x)2O3 thin film with continuous composition spread

    International Nuclear Information System (INIS)

    Schmidt-Grund, R.; Kranert, C.; Wenckstern, H. von; Zviagin, V.; Lorenz, M.; Grundmann, M.

    2015-01-01

    We determined the dielectric function of the alloy system (Al x Ga 1−x ) 2 O 3 by spectroscopic ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for Al contents ranging from x = 0.11 to x = 0.55. For the composition range x < 0.4, we observe single phase material in the β-modification and for larger Al content also the occurrence of γ-(Al,Ga) 2 O 3 . We derived spectra of the refractive index and the absorption coefficient as well as energy parameters of electronic band-band transitions by model analysis of the dielectric function. The dependence of the dielectric functions lineshape and the energy parameters on x is highly continuous, reflecting theoretical expectations. The data presented here provide a basis for a deeper understanding of the electronic properties of this material system and may be useful for device engineering

  10. Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-11-01

    Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

  11. Dielectric materials for electrical engineering

    CERN Document Server

    Martinez-Vega, Juan

    2013-01-01

    Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric poly

  12. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  13. Substrate-induced dielectric polarization in thin films of lead-free (Sr{sub 0.5}Bi{sub 0.5}){sub 2}Mn{sub 2-x}Ti{sub x}O{sub 6-δ} perovskites grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez-Serrano, I., E-mail: ias@ucm.es [Dpto. Química Inorgánica I, Facultad de Ciencias Químicas, Universidad Complutense, 28040 Madrid (Spain); Ruiz de Larramendi, I. [Dpto. Química Inorgánica, Facultad de Ciencia y Tecnología, Universidad del País Vasco UPV/EHU, 48080 Bilbao (Spain); López, M.L.; Veiga, M.L. [Dpto. Química Inorgánica I, Facultad de Ciencias Químicas, Universidad Complutense, 28040 Madrid (Spain)

    2017-03-31

    Highlights: • Highly oriented SrBiMn{sub 2-x}Ti{sub x}O{sub 6} thin films are successfully fabricated by PLD. • Thicknesses between 80 and 900 nm depending on x, substrate-type and chamber pressure. • Compositional A-segregation controlled by the STO substrate orientation. • Dielectric response analyzed under impedance and modulus formalisms. • Relaxor phenomena obtained related to NPRs formation and compositional scenario. - Abstract: Thin films of SrBiMn{sub 2-x}Ti{sub x}O{sub 6-δ} have been fabricated by Pulsed Laser Deposition on SrTiO{sub 3} [100] and [111] substrates. Their texture, width, homogeneity and morphology are evaluated by means of XRD, SEM, XPS, whereas complex impedance spectroscopy is employed to analyze their electrical response. The thickness values range between 80 and 900 nm depending on the experimental conditions. The epitaxial growing could be interpreted in terms of two contributions of microstructural origin: a matrix part and some polycrystalline surface formations (hemi-spheres). Texture studies suggest a fiber-type orientated morphology coherently with the Scanning Electron Microscopy images. XPS analyses indicate a segregation regarding A-sublattice cations, which features depend on the substrate orientation. This segregation could be connected to the development of nanopolar regions. Impedance data show the electrical polarization in the samples to be enhanced compared to bulk response of corresponding powdered samples. A relaxor behavior which fits a Vogel-Fulcher law is obtained for x = 0.50 whereas an almost frequency-independent relaxor ferroelectric behavior is registered for the thinnest film of x = 0.25 composition grown on SrTiO{sub 3} [111] substrate. The influence of compositional and structural aspects in the obtained dielectric response is analyzed.

  14. Effects of Bi doping on dielectric and ferroelectric properties

    Indian Academy of Sciences (India)

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

  15. Oblique surface waves at an interface between a metal-dielectric superlattice and an isotropic dielectric

    International Nuclear Information System (INIS)

    Vuković, Slobodan M; Miret, Juan J; Zapata-Rodriguez, Carlos J; Jakšić, Zoran

    2012-01-01

    We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal-dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal-dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

  16. Optics of dielectric microstructures

    DEFF Research Database (Denmark)

    Søndergaard, Thomas

    2002-01-01

    From the work carried out within the ph.d. project two topics have been selected for this thesis, namely emission of radiation by sources in dielectric microstructures, and planar photonic crystal waveguides. The work done within the first topic, emission of radiation by sources in dielectric...... microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... is based on the Fermi Golden Rule, and spontaneous emission from emitters in a passive dielectric microstructure is calculated by summing over the emission into each electromagnetic mode of the radiation field. This method is applied to investigate spontaneous emission in a two-dimensional photonic crystal...

  17. Functional silicone copolymers and elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

  18. Plasma nitridation optimization for sub-15 A gate dielectrics

    NARCIS (Netherlands)

    Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

  19. Switchable directional excitation surface plasmon polaritons with dielectric nanoantennas

    DEFF Research Database (Denmark)

    Sinev, I.; Komissarenko, F.; Bogdanov, A.

    2017-01-01

    We demonstrate directional launching of surface plasmon polaritons on thin goldfilm with a single silicon nanosphere. The directivity pattern of the excited surface waves exhibits rapid switching from forward to backward excitation, which is driven by the mutual interference of magnetic and elect...... and electric dipole moments supported by the dielectric nanoantenna....

  20. Environmental constraints on West Antarctic ice-sheet formation

    Energy Technology Data Exchange (ETDEWEB)

    Lindstrom, D R; MacAyeal, D R

    1987-01-01

    Small perturbations in Antarctic environmental conditions can culminate in the demise of the Antarctic ice sheet's western sector. This may have happened during the last interglacial period, and could recur within the next millennium due to atmospheric warming from trace gas and CO/sub 2/ increases. In this study, we investigate the importance of sea-level, accumulation rate, and ice influx from the East Antarctic ice sheet in the re-establishment of the West Antarctic ice sheet from a thin cover using a time-dependent numerical ice-shelf model. Our results show that a precursor to the West Antarctic ice sheet can form within 3000 years. Sea-level lowering caused by ice-sheet development in the Northern Hemisphere has the greatest environmental influence. Under favorable conditions, ice grounding occurs over all parts of the West Antarctic ice sheet except up-stream of Thwaites Glacier and in the Ross Sea region.