Dielectric and acoustical high frequency characterisation of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

2010-02-15

Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Dielectric loss of strontium titanate thin films

Science.gov (United States)

Dalberth, Mark Joseph

1999-12-01

Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

NARCIS (Netherlands)

Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

2007-01-01

Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-01-01

Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

Monotron and azimuthally corrugated: application to the high power microwaves generation

International Nuclear Information System (INIS)

Castro, Pedro Jose de

2003-01-01

The present document reports the activity of construction and initial operation of 6.7 GHz operation for high power microwave generation, the study on cylindrical resonators with azimuthally corrugated cross section, the determination of electrical conductivity of metallic materials and development of dielectric resonators for telecommunication applications

Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

Science.gov (United States)

van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

2015-08-12

We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

International Nuclear Information System (INIS)

Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

2007-01-01

With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

Science.gov (United States)

Baniecki, John David

This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

FDTD simulations and analysis of thin sample dielectric properties measurements using coaxial probes

Energy Technology Data Exchange (ETDEWEB)

Bringhurst, S.; Iskander, M.F.; White, M.J. [Univ. of Utah, Salt Lake City, UT (United States). Electrical Engineering Dept.

1996-12-31

A metallized ceramic probe has been designed for high temperature broadband dielectric properties measurements. The probe was fabricated out of an alumina tube and rod as the outer and inner conductors respectively. The alumina was metallized with a 3 mil layer of moly-manganese and then covered with a 0.5 mil protective layer of nickel plating. The probe has been used to make complex dielectric properties measurements over the complete frequency band from 500 MHz to 3 GHz, and for temperatures as high as 1,000 C. A 3D Finite-Difference Time-Domain (FDTD) code was used to help investigate the feasibility of this probe to measure the complex permittivity of thin samples. It is shown that by backing the material under test with a standard material of known dielectric constant, the complex permittivity of thin samples can be measured accurately using the developed FDTD algorithm. This FDTD procedure for making thin sample dielectric properties measurements will be described.

Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

International Nuclear Information System (INIS)

Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

2016-01-01

Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

Optimum fiber distribution in singlewall corrugated fiberboard

Science.gov (United States)

Millard W. Johnson; Thomas J. Urbanik; William E. Denniston

1979-01-01

Determining optimum distribution of fiber through rational design of corrugated fiberboard could result in significant reductions in fiber required to meet end-use conditions, with subsequent reductions in price pressure and extension of the softwood timber supply. A theory of thin plates under large deformations is developed that is both kinematically and physically...

Cellulose triacetate, thin film dielectric capacitor

Science.gov (United States)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

OpenAIRE

Lin, Yu-Hsien; Chou, Jay-Chi

2014-01-01

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-López, Manuel Angel Quevedo

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

KAUST Repository

Quevedo-Ló pez, Manuel Angel Quevedo; Wondmagegn, Wudyalew T.; Alshareef, Husam N.; Ramí rez-Bon, Rafael; Gnade, Bruce E.

2011-01-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

Science.gov (United States)

Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

2017-08-16

In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation

Effect of crystal structure on strontium titanate thin films and their dielectric properties

Science.gov (United States)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

Science.gov (United States)

Roy, Dhrubojyoti

2018-05-01

Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

International Nuclear Information System (INIS)

Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

2011-01-01

Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

Science.gov (United States)

Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

2011-09-01

Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

Stimulated Raman gain scattering in thin planar dielectric waveguides

NARCIS (Netherlands)

Kanger, Johannes S.; Otto, Cornelis; Greve, Jan

1995-01-01

The stimulated Raman gain effect in planar dielectric waveguides is analyzed for the study of thin layers. Calculations show high gain factors and predict the possibility of detecting monolayers. Compared with those for methods based on ref lection, the gain can be 4 orders of magnitude higher for a

Structural, dielectric and AC conductivity study of Sb2O3 thin film ...

Indian Academy of Sciences (India)

52

However, to date, no reports have appeared on impedance spectroscopy, modulus behavior, electrical conductivity, dielectric relaxation and dielectric properties of crystalline Sb2O3 thin films. This paper deals for the first time with the frequency and temperature dependence of AC conductivity and complex electric modulus ...

Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

International Nuclear Information System (INIS)

Misirlioglu, I B; Yildiz, M

2013-01-01

We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

Directory of Open Access Journals (Sweden)

Lyly Nyl Ismail

2012-01-01

Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

2015-01-01

In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

Self-standing corrugated Ag and Au-nanorods for plasmonic applications

DEFF Research Database (Denmark)

Habouti, S.; Mátéfi-Tempfli, M.; Solterbeck, C.-H.

2011-01-01

We use home-made Si-supported anodized alumina thin film templates for the electrodeposition of large area self-standing Ag- and Au-nanorod (Au-NR) arrays. The deposition conditions chosen, i.e. electrolyte composition and deposition voltage, lead to a corrugated rod morphology, particularly for Au...

Sol–gel deposited ceria thin films as gate dielectric for CMOS ...

Indian Academy of Sciences (India)

Sol–gel deposited ceria thin films as gate dielectric for CMOS technology. ANIL G KHAIRNAR ... The semiconductor roadmap following Moore's law is responsible for ..... The financial support from University Grants Commi- ssion (UGC), New ...

On the generation of electromagnetic waves in the terahertz frequency range

International Nuclear Information System (INIS)

Namiot, V.A.; Shchurova, L.Yu.

2011-01-01

It is shown that a thin dielectric plate, which can act as an open dielectric waveguide, it is possible to produce amplification and generation of electromagnetic waves with frequencies in the terahertz range. For this purpose, we propose using a dielectric plate with a corrugated surface, in which case the electric field of the transverse electromagnetic wave in the waveguide has a periodic spatial structure in the local area near to the corrugation. Terahertz electromagnetic waves are excited by a beam of electrons moving in vacuum along the dielectric plate at a small distance from its corrugated surface. Corrugation period is chosen in order to ensure the most effective interaction of the electron beam with the first harmonic of the electric field induced by the corrugation. Amplification and generation of electromagnetic waves propagating in a dielectric waveguide is realized as a result of deceleration of the electron beam by a wave electric field induced by a corrugated dielectric surface in the zone near the corrugation. We discuss possible ways to create electron beams with the desired characteristics. We offer a way to stabilize the beam position above the plate, avoiding the bombardment of the plate by electrons. It is shown that it is possible to significantly increase the efficiency of the device through the recovery of energy that remains in the electrons after their interaction with the wave. -- Highlights: → We propose a scheme of a generator of radio waves in the terahertz range. → This scheme includes a corrugated dielectric plate, which can act as an open waveguide. → A strip electron beam is in vacuum near the dielectric corrugated surface. → Generation is achieved by converting electrons' energy into electromagnetic energy. → The waveguide wave extends perpendicularly to electron motion.

Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

Science.gov (United States)

Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

2015-01-14

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

International Nuclear Information System (INIS)

Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

2013-01-01

An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

Anatomy of the Corrugator Muscle.

Science.gov (United States)

Hwang, Kun; Lee, Jung Hun; Lim, Hee Joong

2017-03-01

The aim of this article is to systematically review the anatomy and action of the corrugator muscle. PubMed and Scopus were searched using the terms "corrugator" AND "anatomy." Among the 60 full texts from the 145 relevant abstracts, 34 articles without sufficient content were excluded and 4 articles drawn from the reference lists were added. Among the 30 articles analyzed (721 hemifaces), 28% classified by oblique head and transverse head, and 72% did not. Corrugator originated mostly from the medial supraorbital rim (45%), followed by the medial frontal bone (31%), the medial infraorbital rim (17%), and the upper nasal process (7%). Corrugator extended through the frontalis and orbicularis oculi (41%), only the frontalis (41%), or only the orbicularis oculi (18%). Corrugator ran superolaterally (59%), or laterally (41%). Corrugators inserted mostly to the middle of the eyebrow (57%), or the medial half of the eyebrow (36%), but also to the glabella region (7%). The length of the corrugator ranged 38 to 53 mm. The transverse head (23.38 mm) was longer than the oblique head (19.75 mm). Corrugator was thicker at the medial canthus than at the midpupillary line. Corrugator was innervated by the temporal branch of the facial nerve (66%), the zygomatic branch (17%), or the angular nerve (zygomatic branch and buccal branch, 17%). Supraorbital nerve (60%) or supratrochlear nerve (40%) penetrated the corrugator. The action was depressing, pulling the eyebrow medially (91%), or with medial eyebrow elevation and lateral eyebrow depression (9%). Surgeons must keep this anatomy in mind during surgical procedures.

SELF-TRAPPING OF DISKOSEISMIC CORRUGATION MODES IN NEUTRON STAR SPACETIMES

Energy Technology Data Exchange (ETDEWEB)

Tsang, David [Center for Theory and Computation, Department of Astronomy, University of Maryland, College Park, MD 20742 (United States); Pappas, George [Department of Physics and Astronomy, The University of Mississippi, University, MS 38677 (United States)

2016-02-10

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense–Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

Self-Trapping of Diskoseismic Corrugation Modes in Neutron Star Spacetimes

Science.gov (United States)

Tsang, David; Pappas, George

2016-02-01

We examine the effects of higher-order multipole contributions of rotating neutron star (NS) spacetimes on the propagation of corrugation (c-)modes within a thin accretion disk. We find that the Lense-Thirring precession frequency, which determines the propagation region of the low-frequency fundamental corrugation modes, can experience a turnover allowing for c-modes to become self-trapped for sufficiently high dimensionless spin j and quadrupole rotational deformability α. If such self-trapping c-modes can be detected, e.g., through phase-resolved spectroscopy of the iron line for a high-spin low-mass accreting neutron star, this could potentially constrain the spin-induced NS quadrupole and the NS equation of state.

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

Science.gov (United States)

Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

2010-02-01

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Directory of Open Access Journals (Sweden)

Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Structural characterization and dielectric properties of BaTiO3 thin films obtained by spin coating

Directory of Open Access Journals (Sweden)

Branimir Bajac

2014-12-01

Full Text Available Barium titanate thin films were prepared by spin coating deposition technique of an acetic precursor sol and sintered at 750, 900 and 1050 °C. Phase composition of the obtained thin films was characterized by X-ray diffraction and Raman spectroscopy. Their morphology was analysed by scanning electron microscopy and atomic force microscopy. Dielectric properties of thin films sintered at 750 and 900 °C were characterized by LCD device, where the influence of sintering temperature on dielectric permittivity and loss tangent was inspected. It was concluded that higher sintering temperature increases grain size and amount of tetragonal phase, hence higher relative permittivity was recorded. The almost constant relative permittivity in the measured frequency (800 Hz–0.5 MHz and temperature (25–200 °C ranges as well as low dielectric loss are very important for the application of BaTiO3 films in microelectronic devices.

Preparation and dielectric properties of compositionally graded lead barium zirconate thin films

Energy Technology Data Exchange (ETDEWEB)

Hao, Xihong, E-mail: xhhao@imust.edu.c [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhang, Zhiqing [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhou, Jing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); An, Shengli [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Zhai, Jiwei [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

2010-07-09

Both up and down compositionally graded (Pb{sub 1-x}Ba{sub x})ZrO{sub 3} (PBZ) thin films with increasing x from 0.4 to 0.6 were deposited on Pt(1 1 1)-buffer layered silicon substrates through a sol-gel method. The microstructure and dielectric properties of graded PBZ thin films were investigated systemically. X-ray diffraction patterns confirmed that both PBZ films had crystallized into a pure perovskite phase after annealed 700 {sup o}C. Electrical measurement results showed that although up graded films had a slightly larger tunability, dielectric loss of down graded films was much lower than that of up graded films. Therefore, the figure of merit of down graded PBZ films was greatly enhanced, as compared with up graded films. Moreover, down graded PBZ thin films also displayed excellent temperature stability with a smaller temperature coefficient of capacitance (TCC) of -0.59 x 10{sup -3} {sup o}C{sup -1} from 20 {sup o}C to 80 {sup o}C.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Self-standing chitosan films as dielectrics in organic thin-film transistors

Directory of Open Access Journals (Sweden)

J. Morgado

2013-12-01

Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

Science.gov (United States)

Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

2016-07-11

The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

Science.gov (United States)

Giacometti, José A.

2018-05-01

This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics.

Science.gov (United States)

Hutchins, Daniel O; Acton, Orb; Weidner, Tobias; Cernetic, Nathan; Baio, Joe E; Castner, David G; Ma, Hong; Jen, Alex K-Y

2012-11-15

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO x (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10 -8 A cm -2 and capacitance density of 0.62 µF cm -2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm 2 V -1 s -1 .

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

Science.gov (United States)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

Energy Technology Data Exchange (ETDEWEB)

Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

2011-11-01

Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

Directory of Open Access Journals (Sweden)

Dahlang Tahir

2011-11-01

Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

Laser-induced damage to thin film dielectric coatings

International Nuclear Information System (INIS)

Walker, T.W.

1980-01-01

The laser-induced damage thresholds of dielectric thin film coatings have been found to be more than an order of magnitude lower than the bulk material damage thresholds. Prior damage studies have been inconclusive in determining the damage mechanism which is operative in thin films. A program was conducted in which thin film damage thresholds were measured as a function of laser wavelength (1.06 μm, 0.53 μm, 0.35 μm and 0.26 μm), laser pulse length (5 and 15 nanoseconds), film materials and film thickness. The large matrix of data was compared to predictions given by avalanche ionization, multiphoton ionization and impurity theories of laser damage. When Mie absorption cross-sections and the exact thermal equations were included into the impurity theory excellent agreement with the data was found. The avalanche and multiphoton damage theories could not account for most parametric variations in the data. For example, the damage thresholds for most films increased as the film thickness decreased and only the impurity theory could account for this behavior. Other observed changes in damage threshold with changes in laser wavelength, pulse length and film material could only be adequately explained by the impurity theory. The conclusion which results from this study is that laser damage in thin film coatings results from absorbing impurities included during the deposition process

A tubular dielectric elastomer actuator: Fabrication, characterization and active vibration isolation

DEFF Research Database (Denmark)

Sarban, R.; Jones, R. W.; Mace, B. R.

2011-01-01

This contribution reviews the fabrication, characterization and active vibration isolation performance of a core-free rolled tubular dielectric elastomer (DE) actuator, which has been designed and developed by Danfoss PolyPower A/S. PolyPower DE material, PolyPower (TM), is produced in thin sheets...... of 80 mu m thickness with corrugated metallic electrodes on both sides. Tubular actuators are manufactured by rolling the DE sheets in a cylindrical shape. The electromechanical characteristics of such actuators are modeled based on equilibrium pressure equation. The model is validated with experimental...... the dominant dynamic characteristics of the core-free tubular actuator. It has been observed that all actuators have similar dynamic characteristics in a frequency range up to 1 kHz. A tubular actuator is then used to provide active vibration isolation (AVI) of a 250 g mass subject to shaker generated 'ground...

Dielectric properties of electron irradiated PbZrO 3 thin films

Indian Academy of Sciences (India)

The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well ...

Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

International Nuclear Information System (INIS)

Li, Qiang; Xu, Mengmeng; Fan, Huiqing; Wang, Hairong; Peng, Biaolin; Long, Changbai; Zhai, Yuchun

2013-01-01

Highlights: ► Bottom-up self-assembly Cu 2 O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET). ► The dielectric response of Cu 2 O/ZnO heterojunction thin films had been investigated. ► The universal dielectric response was used to investigate the hopping behavior in Cu 2 O/ZnO heterojunction. -- Abstract: Structures and morphologies of the Cu 2 O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu 2 O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu 2 O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

Science.gov (United States)

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

Energy Technology Data Exchange (ETDEWEB)

Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James [School of Physics, University of Hyderabad, Hyderabad, Telangana 500046 (India); Emani, Sivanagi Reddy [Advanced Center of Research in High Energy Materials (ACRHEM), School of Physics, University of Hyderabad, Telangana 500046 (India)

2016-05-23

Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

International Nuclear Information System (INIS)

Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

2016-01-01

The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

Corrugated megathrust revealed offshore from Costa Rica

Science.gov (United States)

Edwards, Joel H.; Kluesner, Jared; Silver, Eli A.; Brodsky, Emily E.; Brothers, Daniel; Bangs, Nathan L.; Kirkpatrick, James D.; Wood, Ruby; Okamato, Kristina

2018-01-01

Exhumed faults are rough, often exhibiting topographic corrugations oriented in the direction of slip; such features are fundamental to mechanical processes that drive earthquakes and fault evolution. However, our understanding of corrugation genesis remains limited due to a lack of in situ observations at depth, especially at subducting plate boundaries. Here we present three-dimensional seismic reflection data of the Costa Rica subduction zone that image a shallow megathrust fault characterized by corrugated, and chaotic and weakly corrugated topographies. The corrugated surfaces extend from near the trench to several kilometres down-dip, exhibit high reflection amplitudes (consistent with high fluid content/pressure) and trend 11–18° oblique to subduction, suggesting 15 to 25 mm yr−1 of trench-parallel slip partitioning across the plate boundary. The corrugations form along portions of the megathrust with greater cumulative slip and may act as fluid conduits. In contrast, weakly corrugated areas occur adjacent to active plate bending faults where the megathrust has migrated up-section, forming a nascent fault surface. The variations in megathrust roughness imaged here suggest that abandonment and then reestablishment of the megathrust up-section transiently increases fault roughness. Analogous corrugations may exist along significant portions of subduction megathrusts globally.

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

2017-11-01

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Structural, dielectric and ferroelectric characterization of PZT thin films

Directory of Open Access Journals (Sweden)

Araújo E.B.

1999-01-01

Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

International Nuclear Information System (INIS)

Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

2003-01-01

ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

International Nuclear Information System (INIS)

Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

2012-01-01

Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectrics

Energy Technology Data Exchange (ETDEWEB)

Hutchins, Daniel O.; Acton, Orb [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Weidner, Tobias [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Cernetic, Nathan [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Baio, Joe E. [Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Castner, David G. [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Ma, Hong, E-mail: hma@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Jen, Alex K.-Y., E-mail: ajen@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemistry, University of Washington, Seattle, WA 98195 (United States)

2012-11-15

Highlights: Black-Right-Pointing-Pointer Rapid processing of SAM in ambient conditions is achieved by spin coating. Black-Right-Pointing-Pointer Thermal annealing of a bulk spun-cast molecular film is explored as a mechanism for SAM densification. Black-Right-Pointing-Pointer High-performance SAM-oxide hybrid dielectric is obtained utilizing a single wet processing step. - Abstract: Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO{sub x} (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7 Multiplication-Sign 10{sup -8} A cm{sup -2} and capacitance density of 0.62 {mu}F cm{sup -2} at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to

Dielectrophoretic deformation of thin liquid films induced by surface charge patterns on dielectric substrates

NARCIS (Netherlands)

Berendsen, C.W.J.; Kuijpers, C.J.; Zeegers, J.C.H.; Darhuber, A.A.

2013-01-01

We studied the deformation of thin liquid films induced by surface charge patterns at the solid–liquid interface quantitatively by experiments and numerical simulations. We deposited a surface charge distribution on dielectric substrates by applying potential differences between a conductive liquid

Monotron and azimuthally corrugated: application to the high power microwaves generation; Monotron e cavidades azimutalmente corrugadas: aplicacao a geracao de microondas de alta potencia

Energy Technology Data Exchange (ETDEWEB)

Castro, Pedro Jose de

2003-07-01

The present document reports the activity of construction and initial operation of 6.7 GHz operation for high power microwave generation, the study on cylindrical resonators with azimuthally corrugated cross section, the determination of electrical conductivity of metallic materials and development of dielectric resonators for telecommunication applications.

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Directory of Open Access Journals (Sweden)

A. Artemenko

2013-04-01

Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

Electromagnetic radiation of electrons in corrugated graphene

Energy Technology Data Exchange (ETDEWEB)

Ktitorov, S. A., E-mail: ktitorov@mail.ioffe.ru; Myhamadiarov, R. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-08-15

Bremsstrahlung in corrugated single-layer graphene in the presence of a ballistic transport current is analyzed. Radiation of a similar nature is observed in undulators and wigglers. Regular and chaotic corrugations (ripples) are considered. It is shown that the quadratic relation between the Monge membrane function and the synthetic calibration field leads to the appearance of a central peak in the radiation spectral density. Possible formation mechanisms of single-layer graphene corrugation are proposed. In one case, the corrugation is considered as an incommensurate superstructure in a two-dimensional crystal, resulting from instability developing in the optical phonon subsystem with the formation of a periodic soliton train. Corrugation results from the interaction of subsystems. Another possible mechanism consists in instability of the membrane flat state due to strong fluctuations characteristic of two-dimensional systems.

Electromagnetohydrodynamic flow through a microparallel channel with corrugated walls

International Nuclear Information System (INIS)

Buren, Mandula; Jian, Yongjun; Chang, Long

2014-01-01

In this paper a perturbation method is introduced to study the electromagnetohydrodynamic (EMHD) flow in a microparallel channel with slightly corrugated walls. The corrugations of the two walls are periodic sinusoidal waves of small amplitude either in phase or half-period out of phase, and the perturbation solutions of velocity and volume flow rate are obtained. Using numerical computation the effects of the corrugations on the flow are graphically analysed. The results show that the influence of corrugation on the flow decreases with Hartmann number. The phase difference of wall corrugations becomes unimportant when the wavenumber is greater than 3 or when the Hartmann number is greater than 4. With the increase in wavenumber, the decreasing effects of corrugations on the flow increase. When the wavenumber is smaller than the threshold wavenumber (it is a function of Hartmann number) and the wall corrugations are half-period out of phase, the corrugations can enhance the mean velocity of EMHD flow. However, the mean velocity is always decreased when the corrugations are in phase. (paper)

Experimental studies of Steel Corrugated Constructions

Directory of Open Access Journals (Sweden)

Lazarev Yuriy

2016-01-01

Full Text Available The purpose of this particular article is to assess existing calculations of steel corrugated constructions. Steel Corrugated Construction is a perspective type of constructions, which is exhibiting numerous advantages in comparison with one that currently applied in automobile and railroad networks (reinforced concrete water-throughput pipes, reinforced concrete frame bridges. The evaluation of experimental data on models of constructions of this particular type has been carried out in order to improve calculations of Steel Corrugated Constructions.

Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

International Nuclear Information System (INIS)

Oh, Teresa; Oh, Kyoung Suk; Lee, Kwang-Man; Choi, Chi Kyu

2004-01-01

The amorphous structure of organic-inorganic hybrid type Si-O-C thin films was studied using the first principles molecular-dynamics method with density functional techniques. The correlation between the dielectric constant and the degree of amorphous structure in organic-inorganic hybrid type Si-O-C thin films was studied. Si-O-C thin films were deposited by high-density plasma chemical vapor deposition using bis-trimethylsilylmethane and oxygen precursors. As-deposited films and films annealed at 500 deg. C were analyzed by X-ray diffraction (XRD). For quantitative analysis, the X-ray diffraction patterns of the samples were transformed to the radial distribution function (RDF) using Fourier analysis. Hybrid type Si-O-C thin films can be divided into three types using their amorphous structure and the dielectric constant: those with organic, hybrid, and inorganic properties

Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

International Nuclear Information System (INIS)

Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

2012-01-01

Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

Squeezing Molecularly thin Lubricant Films between curved Corrugated Surfaces with long range Elasticity

DEFF Research Database (Denmark)

Sivebæk, Ion Marius; Samoilov, Vladimir N.; Persson, Bo N. J.

2010-01-01

3H8, C4H10, C8H18, C9H20, C10H22, C14H30 and C16H34, confined between corrugated gold surfaces. Well defined molecular layers develop in the lubricant film when the width is of the order of a few atomic diameters. An external squeezing pressure induces discontinuous, thermally activated changes...

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

2015-11-01

Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

Passive heat transfer enhancement in 3D corrugated tube

DEFF Research Database (Denmark)

Navickaité, Kristina; Engelbrecht, Kurt; Bahl, Christian

transfer and fluid flow with a constant wall temperature and total pressure drop. The governing equations for these problems were solved using the Finite Element Method. The results of numerical modelling show significant increase in NTU for double corrugated tubes compared to a circular tube. The friction......An innovative hydraulic design was studied for corrugated tube geometry for a heat exchanger. An ellipse based double corrugation was used as a concept of the geometry. The hydraulic diameter (Dh) is maintained over the tube length while the shape of the cross section varies continuously along...... the flow direction. 38 corrugated tubes with a Dh of 5 mm were studied numerically with corrugation heights from 0.23 to 0.69 mm and corrugation periods from 5 to 50 mm for laminar flow with water. Computational fluid dynamics (CFD) is used as a tool to study the effect of corrugation geometry on heat...

Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO2 substrate

Directory of Open Access Journals (Sweden)

A. Eršte

2016-03-01

Full Text Available We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE and polypropylene (PP, which are at present used in foil capacitors. Stable values of the dielectric constant ε′≈5 (being twice higher than in HDPE and PP over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

International Nuclear Information System (INIS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping. (orig.)

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

Science.gov (United States)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

International Nuclear Information System (INIS)

Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

2009-01-01

Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

Science.gov (United States)

Zednik, Ricardo J.; McIntyre, Paul C.; Baniecki, John D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki

2007-03-01

We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20-575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie-von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

International Nuclear Information System (INIS)

Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

2012-01-01

Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

Science.gov (United States)

Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

2014-07-01

BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

Science.gov (United States)

Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan

2013-06-01

We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).

Composite corrugated structures for morphing wing skin applications

International Nuclear Information System (INIS)

Thill, C; Etches, J A; Bond, I P; Potter, K D; Weaver, P M

2010-01-01

Composite corrugated structures are known for their anisotropic properties. They exhibit relatively high stiffness parallel (longitudinal) to the corrugation direction and are relatively compliant in the direction perpendicular (transverse) to the corrugation. Thus, they offer a potential solution for morphing skin panels (MSPs) in the trailing edge region of a wing as a morphing control surface. In this paper, an overview of the work carried out by the present authors over the last few years on corrugated structures for morphing skin applications is first given. The second part of the paper presents recent work on the application of corrugated sandwich structures. Panels made from multiple unit cells of corrugated sandwich structures are used as MSPs in the trailing edge region of a scaled morphing aerofoil section. The aerofoil section features an internal actuation mechanism that allows chordwise length and camber change of the trailing edge region (aft 35% chord). Wind tunnel testing was carried out to demonstrate the MSP concept but also to explore its limitations. Suggestions for improvements arising from this study were deduced, one of which includes an investigation of a segmented skin. The overall results of this study show that the MSP concept exploiting corrugated sandwich structures offers a potential solution for local morphing wing skins for low speed and small air vehicles

Stiffness Matrices and Anisotropy in the Trapezoidal Corrugated Composite Sheets

Directory of Open Access Journals (Sweden)

Mohammad Golzar

2013-10-01

Full Text Available In the some applications like as morphing technology, high strain and anisotropic behavior are essential design requirements. The corrugated composite sheets due to their special geometries have potential to high deflection under axial loading through longitudinal direction of corrugation. In this research, the strain and the anisotropic behavior of corrugated composite sheets are investigated by fabricating glass/epoxy samples with trapezoidal geometries. For evaluation of the mechanical behavior of the composites the samples were subjected to tension and flexural tests in the longitudinal and transverse directions of corrugation. In order to determine anisotropic behavior of the corrugated sheets, two approaches were introduced: (1 tensile anisotropic (E* and (2 flexural anisotropic (D*. The anisotropic behavior and ultimate deflections were investigated theoretically and experimentally. In this paper, mechanical behaviors based on theoretical and experimental analysis including the elastic constants and stiffness matrices of trapezoidal corrugated composite sheets were studied and the results were verified by finite element method. The results of the numerical and analytical solutions were compared with those of experimental tests. Finally, the load-displacement curves of tensile tests in longitudinal direction of corrugation, the ultimate deflection and anisotropy behavior of these exclusive composite sheets in the corrugated composite sheets were studied experimentally. The experimental results of the trapezoidal corrugated sheets showed that one of the most important parameters in the ultimate strain was amplitude of the corrugation elements. Generally, increasing the amplitude and element per length unit of trapezoidal corrugated specimen led to higher ultimate strain.

Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

DEFF Research Database (Denmark)

Christiansen, Alexander Bruun; Caringal, Gideon Peter; Clausen, Jeppe Sandvik

2015-01-01

Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial...... frequency in the range 5-7 mu m(-1). A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed...... to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications...

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

Science.gov (United States)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Impact of Corrugated Paperboard Structure on Puncture Resistance

Directory of Open Access Journals (Sweden)

Vaidas Bivainis

2015-03-01

Full Text Available Thanks to its excellentprotective properties, lightness, a reasonable price, and ecology, corrugated paperboardis one of the most popular materials used in the production of packaging for variousproducts. During transportation or storage, packaging with goods can be exposedto the mass of other commodities, dropping from heights and transportationshock loads, which can lead to their puncture damage. Depending on the purposeand size of the packaging, the thickness, grammage, constituent paper layers,numbers of layers and type of fluting of corrugated paperboard used in itsproduction differ. A standard triangular prism, corrugated paperboard fixationplates and a universal tension-compression machine were used to investigate theimpact of corrugated paperboard structure and other parameters on the punctureresistance of the material. The investigation determines the maximum punctureload and estimates energy required to penetrate the corrugated paperboard. Itwas found that the greatest puncture resistance is demonstrated by paperboardwith a larger number of corrugating flutings and the board produced from harderpaper with a smaller amount of recycled paper. It was established that thegrammage of three-layered paperboard with two different fluting profiles has thegreatest impact on the level of static puncture energy.DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5713

All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

Science.gov (United States)

Petronijevic, Emilija; Sibilia, Concita

2017-05-01

Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

Shear Behavior of Corrugated Steel Webs in H Shape Bridge Girders

Directory of Open Access Journals (Sweden)

Qi Cao

2015-01-01

Full Text Available In bridge engineering, girders with corrugated steel webs have shown good mechanical properties. With the promotion of composite bridge with corrugated steel webs, in particular steel-concrete composite girder bridge with corrugated steel webs, it is necessary to study the shear performance and buckling of the corrugated webs. In this research, by conducting experiment incorporated with finite element analysis, the stability of H shape beam welded with corrugated webs was tested and three failure modes were observed. Structural data including load-deflection, load-strain, and shear capacity of tested beam specimens were collected and compared with FEM analytical results by ANSYS software. The effects of web thickness, corrugation, and stiffening on shear capacity of corrugated webs were further discussed.

Optical properties of nonimaging concentrators with corrugated reflectors

Science.gov (United States)

Roennelid, Mats; Perers, Bengt; Karlsson, Bjorn

1994-09-01

A ray tracing study has been performed on the optical properties of cylindrical nonimaging concentrators with linear corrugated reflectors. The corrugations are assumed to be V-formed and to have an extension parallel to the meridian plane of the concentrators. It is shown that the acceptance angle for radiation incident in the meridian plane can be increased for moderate corrugations. This increased acceptance is balanced by a decreased acceptance of radiation from other directions. Calculations of angular acceptance for a 2X compound parabolic concentrator is presented. It is shown that the annual irradiation on a solar collector with booster reflector can be increased if corrugated reflectors are used instead of smooth reflectors.

Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

NARCIS (Netherlands)

De Hoop, A.T.; Jiang, L.

2009-01-01

The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

Guiding spoof surface plasmon polaritons by infinitely thin grooved metal strip

Directory of Open Access Journals (Sweden)

Xiang Wan

2014-04-01

Full Text Available In this paper, the propagation characteristics of spoof surface plasmon polaritons (SPPs on infinitely thin corrugated metal strips are theoretically analyzed. Compared with the situations of infinitely thick lateral thickness, the infinitely thin lateral thickness leads to lower plasma frequency according to the analyses. The propagation lengths and the binding capacity of the spoof SPPs are evaluated based on the derived dispersion equation. The effects of different lateral thicknesses are also investigated. At the end, a surface wave splitter is presented using infinitely thin corrugated metal strip. Other functional planar or flexible devices can also be designed using these metal strips in microwave or terahertz regimes.

Nonlinear dielectric response in ferroelectric thin films

Directory of Open Access Journals (Sweden)

Lente, M. H.

2004-08-01

Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

The mechanism of selective corrugation removal by KOH anisotropic wet etching

International Nuclear Information System (INIS)

Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

2010-01-01

The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

Mode selection in two-dimensional Bragg resonators based on planar dielectric waveguides

International Nuclear Information System (INIS)

Baryshev, V R; Ginzburg, N S; Zaslavskii, V Yu; Malkin, A M; Sergeev, A S; Thumm, M

2009-01-01

Two-dimensional Bragg resonators based on planar dielectric waveguides are analysed. It is shown that the doubly periodic corrugation deposited on the dielectric surface in the form of two gratings with translational vectors directed perpendicular to each other ensures effective selection of modes along two coordinates at large Fresnel parameters. This result is obtained both by the method of coupled waves (geometrical optics approximation) and by the direct numerical simulations. Two-dimensional Bragg resonators make it possible to fabricate two-dimensional distributed feedback lasers and to provide generation of spatially coherent radiation in large-volume active media. (waveguides)

Flow induced pulsations caused by corrugated tubes

NARCIS (Netherlands)

Shatto, D.P.; Belfroid, S.P.C.; Peters, M.C.A.M.

2007-01-01

Corrugated tubes can produce a tonal noise when used for gas transport, for instance in the case of flexible risers. The whistling sound is generated by shear layer instability due to the boundary layer separation at each corrugation. This whistling is examined by investigating the frequency,

Flow induced pulsations generated in corrugated tubes

NARCIS (Netherlands)

Belfroid, S.P.C.; Swindell, R.; Tummers, R.

2008-01-01

Corrugated tubes can produce a tonal noise when used for gas transport, for instance in the case of flexible risers. The whistling sound is generated by shear layer instability due to the boundary layer separation at each corrugation. This whistling is examined by investigating the frequency,

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

International Nuclear Information System (INIS)

Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

2014-01-01

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

Radiant absorption characteristics of corrugated curved tubes

Directory of Open Access Journals (Sweden)

Đorđević Milan Lj.

2017-01-01

Full Text Available The utilization of modern paraboloidal concentrators for conversion of solar radiation into heat energy requires the development and implementation of compact and efficient heat absorbers. Accurate estimation of geometry influence on absorption characteristics of receiver tubes is an important step in this process. This paper deals with absorption characteristics of heat absorber made of spirally coiled tubes with transverse circular corrugations. Detailed 3-D surface-to-surface Hemicube method was applied to compare radiation performances of corrugated and smooth curved tubes. The numerical results were obtained by varying the tube curvature ratio and incident radiant heat flux intensity. The details of absorption efficiency of corrugated tubes and the effect of curvature on absorption properties for both corrugated and smooth tubes were presented. The results may have significance to further analysis of highly efficient heat absorbers exposed to concentrated radiant heating. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 42006

Electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Her, Jim-Long [Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan (China); Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Liu, Jiang-Hung; Wang, Hong-Jun; Chen, Ching-Hung [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Koyama, Keiichi [Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065 (Japan)

2014-10-31

In this article, we studied the structural properties and electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO{sub 3} gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm{sup 2}/V-s, a high I{sub on}/I{sub off} current ratio of 4.2 × 10{sup 8}, and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO{sub 3} a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation. - Highlights: • Indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) • Structural and electrical properties of the GdTiO{sub 3} film were studied. • a-IGZO TFT featuring GdTi{sub x}O{sub y} dielectric exhibited better electrical characteristics. • TFT instability investigated under positive and negative gate-bias stress conditions.

Mass transfer in corrugated-plate membrane modules. I. Hyperfiltration experiments

NARCIS (Netherlands)

van der Waal, M.J.; Racz, I.G.

1989-01-01

The application of corrugations as turbulence promoters in membrane filtration was studied. This study showed that it is possible to deform an originally flat membrane to a corrugated shape without damaging it. In hyperfiltration experiments using corrugated cellulose acetate membranes it was found

Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

International Nuclear Information System (INIS)

Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

2009-01-01

Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

Science.gov (United States)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-07-01

Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

Nonlinear finite element modeling of corrugated board

Science.gov (United States)

A. C. Gilchrist; J. C. Suhling; T. J. Urbanik

1999-01-01

In this research, an investigation on the mechanical behavior of corrugated board has been performed using finite element analysis. Numerical finite element models for corrugated board geometries have been created and executed. Both geometric (large deformation) and material nonlinearities were included in the models. The analyses were performed using the commercial...

Growth and characteristics of PbS/polyvinyl alcohol nanocomposites for flexible high dielectric thin film applications

International Nuclear Information System (INIS)

Hmar, J.J.L.; Majumder, T.; Mondal, S.P.

2016-01-01

PbS/polyvinyl alcohol (PbS/PVA) nanocomposites have been grown by a chemical bath deposition process at various growth temperatures (60–100 °C). Transmission electron microscopy (TEM) study revealed the formation of PbS nanoparticles of diameter 6–20 nm encapsulated in PVA matrix. Optical band gap of the nanocomposite films have been found to decrease (1.45 eV–0.67 eV) with increase in growth temperature from 60 °C to 100 °C. The impedance measurements have been carried out by depositing the PbS/PVA films on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates. The room temperature dielectric permittivity and ac conductivity measurements have been carried out for ITO/PbS/PVA/Al devices deposited at various growth temperatures. The nanocomposite films demonstrate superior dielectric permittivity compare to pure PVA polymer. The flexibility studies of ITO/PbS/PVA/Al devices have been performed at different bending angles. - Highlights: • PbS nanoparticles of diameter 6–20 nm were grown in polyvinyl (PVA) matrix. • Optical band gap of nanocomposite films was varied from 1.45–0.67 eV. • The nanocomposite thin films demonstrated superior dielectric permittivity. • Flexibility study of thin film devices was performed at various bending angles.

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Energy Technology Data Exchange (ETDEWEB)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

2015-08-17

We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

Science.gov (United States)

Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

2008-05-01

Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

Impedance spectroscopic and dielectric analysis of Ba0.7Sr0.3TiO3 thin films

International Nuclear Information System (INIS)

Rouahi, A.; Kahouli, A.; Sylvestre, A.; Defaÿ, E.; Yangui, B.

2012-01-01

Highlights: ► The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba 0.7 Sr 0.3 TiO 3 . ► The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. ► The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. ► The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba 0.7 Sr 0.3 TiO 3 thin film with Pt/BST/Pt/TiO 2 /SiO 2 structure was prepared by ion beam sputtering. The film was post annealed at 700 °C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1–10 5 Hz] at different temperatures [175–350 °C]. The Nyquist plots (Z″ vs . Z′) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z″ and M″ are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M ″ /M ″ max shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

Science.gov (United States)

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power

International Nuclear Information System (INIS)

Huang Huan; Zhang Lei; Wang Yang; Han Xiaodong; Wu Yiqun; Zhang Ze; Gan Fuxi

2011-01-01

Research highlights: → We study the optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization. → The optical and dielectric constants, absorption coefficient of Si 15 Sb 85 change regularly with the increasing laser power. → The optical band gaps of Si 15 Sb 85 irradiated upon different power lasers were calculated. → HRTEM images of the samples were observed and the changes of optical and dielectric constants are determined by crystalline structures changes of the films. - Abstract: The optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.

Corrugated Membrane Nonlinear Deformation Process Calculation

OpenAIRE

A. S. Nikolaeva; S. A. Podkopaev

2015-01-01

Elastic elements are widely used in instrumentation. They are used to create a particular interference between the parts, for accumulating mechanical energy, as the motion transmission elements, elastic supports, and sensing elements of measuring devices. Device reliability and quality depend on the calculation accuracy of the elastic elements. A corrugated membrane is rather common embodiment of the elastic element.The corrugated membrane properties depend largely on its profile i.e. a gener...

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

Science.gov (United States)

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

2015-07-13

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

International Nuclear Information System (INIS)

Sarma, R.; Saikia, D.

2010-01-01

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

Periodicity effects on compound waves guided by a thin metal slab sandwiched between two periodically nonhomogeneous dielectric materials

Science.gov (United States)

Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

2017-10-01

Surface-plasmon-polariton waves can be compounded when a sufficiently thin metal layer is sandwiched between two half spaces filled with dissimilar periodically nonhomogeneous dielectric materials. We solved the boundary-value problem for compound waves guided by a layer of a homogeneous and isotropic metal sandwiched between a structurally chiral material (SCM) and a periodically multilayered isotropic dielectric (PMLID) material. We found that the periodicities of the PMLID material and the SCM are crucial to excite a multiplicity of compound guided waves arising from strong coupling between the two interfaces.

Radiation and Internal Charging Environments for Thin Dielectrics in Interplanetary Space

Science.gov (United States)

Minow, Joseph I.; Parker, Linda Neergaard; Altstatt, Richard L.

2004-01-01

Spacecraft designs using solar sails for propulsion or thin membranes to shade instruments from the sun to achieve cryogenic operating temperatures are being considered for a number of missions in the next decades. A common feature of these designs are thin dielectric materials that will be exposed to the solar wind, solar energetic particle events, and the distant magnetotail plasma environments encountered by spacecraft in orbit about the Earth-Sun L2 point. This paper will discuss the relevant radiation and internal charging environments developed to support spacecraft design for both total dose radiation effects as well as dose rate dependent phenomenon, such as internal charging in the solar wind and distant magnetotail environments. We will describe the development of radiation and internal charging environment models based on nearly a complete solar cycle of Ulysses solar wind plasma measurements over a complete range of heliocentric latitudes and the early years of the Geotail mission where distant magnetotail plasma environments were sampled beyond X(sub GSE) = -100 Re to nearly L2 (X(sub GSE) -236 Re). Example applications of the environment models are shown to demonstrate the radiation and internal charging environments of thin materials exposed to the interplanetary space plasma environments.

Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

Energy Technology Data Exchange (ETDEWEB)

Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

2014-02-28

Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

2016-05-01

In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

Assessment of rail long-pitch corrugation

Science.gov (United States)

Valehrach, Jan; Guziur, Petr; Riha, Tomas; Plasek, Otto

2017-09-01

The paper focuses on defects of the running surface of the rail, namely the rail corrugation defect and specifically long-pitch corrugation in curves of small radii. These defects cause a shorter life of the rails, greater maintenance costs and increase the noise and vibration pollution. Therefore, it is very important to understand the formation and development of the imperfection of the rails. In the paper, various sections of railway tracks in the Czech Republic are listed, each of them completed with comparison of defect development, the particular track superstructure, rolling stock, axle load, traffic load etc. Based on performed measurements, defect development has been proved as different on sections with similar (or even same) parameters. The paper assumes that a train velocity is the significant circumstance for defect development rates. Assessment of track section with under sleeper pads, which are expected to be the one of the possible ways to suppress the corrugation defect development, is included in evaluation.

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

Science.gov (United States)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Theoretical prediction on corrugated sandwich panels under bending loads

Science.gov (United States)

Shu, Chengfu; Hou, Shujuan

2018-05-01

In this paper, an aluminum corrugated sandwich panel with triangular core under bending loads was investigated. Firstly, the equivalent material parameters of the triangular corrugated core layer, which could be considered as an orthotropic panel, were obtained by using Castigliano's theorem and equivalent homogeneous model. Secondly, contributions of the corrugated core layer and two face panels were both considered to compute the equivalent material parameters of the whole structure through the classical lamination theory, and these equivalent material parameters were compared with finite element analysis solutions. Then, based on the Mindlin orthotropic plate theory, this study obtain the closed-form solutions of the displacement for a corrugated sandwich panel under bending loads in specified boundary conditions, and parameters study and comparison by the finite element method were executed simultaneously.

Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

Directory of Open Access Journals (Sweden)

M. Egginger

2012-12-01

Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

International Nuclear Information System (INIS)

Zhu Xiaohong; Ren Yinjuan; Zhang Caiyun; Zhu Jiliang; Zhu Jianguo; Xiao Dingquan; Defaÿ, Emmanuel; Aïd, Marc

2013-01-01

Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm −1 ) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes. (paper)

Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

Science.gov (United States)

Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

2013-03-01

Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.

Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

2012-01-31

Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

An Approach for Measuring the Dielectric Strength of OLED Materials

Directory of Open Access Journals (Sweden)

Sujith Sudheendran Swayamprabha

2018-06-01

Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

2016-06-25

The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.

2013-07-18

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

Effect of yttrium doping on the dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} thin film produced by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Saji, Viswanathan S., E-mail: vssaji@chosun.ac.k [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of); Choe, Han Cheol [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of)

2009-05-29

Pure and yttrium substituted CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x/} {sub 2} (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 {sup o}C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x} {sub /2} (x = 0.02) film at 1 KHz were k {approx} 2700 and tan {delta} {approx} 0.07.

Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

Energy Technology Data Exchange (ETDEWEB)

Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

2016-11-30

Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in Zn

CONTRIBUTIONS ON THE DESIGN OF UNCONVENTIONAL CORRUGATED BOARD STRUCTURES

Directory of Open Access Journals (Sweden)

NEIDONI Nadina

2015-06-01

Full Text Available The paper depicts a few contributions on the design of several unconventional corrugated board structures. In general, cardboard and corrugated cardboard is strongly linked to packaging. However, limiting these materials to their primary use does nothing else but to restrict the possibilities of using them in other interesting areas. Consequently, new structures built from cardboard have been imagined and in the paper there are presented a few unconventional uses of the corrugated fiberboard, namely as furniture elements, along with the technology used in the design and the manufacturing process.

The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

2007-02-26

Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

International Nuclear Information System (INIS)

Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

2007-01-01

Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

Directory of Open Access Journals (Sweden)

T. Santhosh Kumar

2014-06-01

Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

Numerical and Experimental Investigations on Mechanical Behavior of Composite Corrugated Core

Science.gov (United States)

Dayyani, Iman; Ziaei-Rad, Saeed; Salehi, Hamid

2012-06-01

Tensile and flexural characteristics of corrugated laminate panels were studied using numerical and analytical methods and compared with experimental data. Prepreg laminates of glass fiber plain woven cloth were hand-laid by use of a heat gun to ease the creation of the panel. The corrugated panels were then manufactured by using a trapezoidal machined aluminium mould. First, a series of simple tension tests were performed on standard samples to evaluate the material characteristics. Next, the corrugated panels were subjected to tensile and three-point bending tests. The force-displacement graphs were recorded. Numerical and analytical solutions were proposed to simulate the mechanical behavior of the panels. In order to model the energy dissipation due to delamination phenomenon observed in tensile tests in all members of corrugated core, plastic behavior was assigned to the whole geometry, not only to the corner regions. Contrary to the literature, it is shown that the three-stage mechanical behavior of composite corrugated core is not confined to aramid reinforced corrugated laminates and can be observed in other types such as fiber glass. The results reveal that the mechanical behavior of the core in tension is sensitive to the variation of core height. In addition, for the first time, the behavior of composite corrugated core was studied and verified in bending. Finally, the analytical and numerical results were validated by comparing them with experimental data. A good degree of correlation was observed which showed the suitability of the finite element model for predicting the mechanical behavior of corrugated laminate panels.

Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

International Nuclear Information System (INIS)

Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

2012-01-01

Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

Flow around a corrugated wing over the range of dragonfly flight

Science.gov (United States)

Padinjattayil, Sooraj; Agrawal, Amit

2017-11-01

The dragonfly flight is very much affected by the corrugations on their wings. A PIV based study is conducted on a rigid corrugated wing for a range of Reynolds number 300-12000 and three different angles of attack (5°-15°) to understand the mechanism of dragonfly flight better. The study revealed that the shape of the corrugation plays a key role in generating vortices. The vortices trapped in the valleys of corrugation dictates the shape of a virtual airfoil around the corrugated wing. A fluid roller bearing effect is created over the virtual airfoil when the trapped vortices merge with each other. A travelling wave produced by the moving virtual boundary around the fluid roller bearings avoids the formation of boundary layer on the virtual surface, thereby leading to high aerodynamic performance. It is found that the lift coefficient increases as the number of vortices increases on the suction surface. Also, it is shown that the partially merged co- rotating vortices give higher lift as compared to fully merged vortices. Further, the virtual airfoil formed around the corrugated wing is compared with a superhydrophobic airfoil which exhibits slip on its surface; several similarities in their flow characteristics are observed. The corrugated airfoil performs superior to the superhydrophobic airfoil in the aerodynamic efficiency due to the virtual slip caused by the travelling wave.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

Coupled Optical Tamm States in a Planar Dielectric Mirror Structure Containing a Thin Metal Film

International Nuclear Information System (INIS)

Zhou Hai-Chun; Yang Guang; Lu Pei-Xiang; Wang Kai; Long Hua

2012-01-01

The coupling between two optical Tamm states (OTSs) with the same eigenenergy is numerically investigated in a planar dielectric mirror structure containing a thin metal film. The reflectivity map in this structure at normal incidence is obtained by applying the transfer matrix method. Two splitting branches appear in the photonic bandgap region when both adjacent dielectric layers of metal film are properly set. The splitting energy of two branches strongly depends on the thickness of the metal film. According to the electric field distribution in this structure, it is found that the high-energy branch corresponds to the antisymmetric coupling between two OTSs, while the low-energy branch is associated with the symmetric coupling between two OTSs. Moreover, the optical difference frequency of two branches is located in a broad terahertz region. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

International Nuclear Information System (INIS)

Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

2007-01-01

The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating

International Nuclear Information System (INIS)

Iyore, O.D.; Roodenko, K.; Winkler, P.S.; Noriega, J.R.; Vasselli, J.J.; Chabal, Y.J.; Gnade, B.E.

2013-01-01

We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors fabricated using standard semiconductor processing techniques. We characterize the capacitors using in-situ vibrational spectroscopy during thermally-assisted poling and correlate the Fourier transform infrared spectroscopy (FTIR) results with X-ray diffraction (XRD) results. FTIR analysis of the neat PVDF-HFP showed α → β transformations during poling at room temperature and at 55 °C. α → β transformations were observed for the crosslinked polymer only during poling at 55 °C. XRD data revealed that photo-crosslinking caused the polymer to partially crystallize into the β-phase. The similar behavior of the neat and crosslinked samples at 55 °C suggests that a higher activation energy was needed for α → β transformations in crosslinked PVDF-HFP during poling. Electrical measurements showed that photo-crosslinking had no significant effect on the dielectric constant and dielectric loss of PVDF-HFP. However, the dielectric strength and maximum energy density of the crosslinked polymer were severely reduced. - Highlights: • Polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) dielectrics were studied. • Phase transformations were observed only at 55 °C for the crosslinked PVDF-HFP. • Crosslinking had no strong effect on the dielectric constant of PVDF-HFP. • Breakdown strengths were 620 MVm −1 and 362 MVm −1 for neat and crosslinked films

Effect of titanium oxide-polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Della Pelle, Andrea M. [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States); Maliakal, Ashok, E-mail: maliakal@lgsinnovations.com [LGS Innovations, 15 Vreeland Rd., Florham Park, NJ 07932 (United States); Sidorenko, Alexander [Department of Chemistry and Biochemistry, University of the Sciences, 600 South 43rd St., Philadelphia, PA 191034 (United States); Thayumanavan, S. [Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St. Amherst, MA 01003 (United States)

2012-07-31

Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide-polystyrene core-shell nanocomposite (TiO{sub 2}-PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO{sub 2}-PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as {alpha}-sexithiophene ({alpha}-6T) (enhancement factor for field effect mobility ranging from 30-100 Multiplication-Sign higher on TiO{sub 2}-PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for {alpha}-sexithiophene ({alpha}-6T) grown by thermal evaporation on TiO{sub 2}-PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO{sub 2}-PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2 Multiplication-Sign ) increase in mobility with increasing TiO{sub 2}-PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation

Effect of titanium oxide–polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

International Nuclear Information System (INIS)

Della Pelle, Andrea M.; Maliakal, Ashok; Sidorenko, Alexander; Thayumanavan, S.

2012-01-01

Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide–polystyrene core–shell nanocomposite (TiO 2 –PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO 2 –PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as α-sexithiophene (α-6T) (enhancement factor for field effect mobility ranging from 30-100× higher on TiO 2 –PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for α-sexithiophene (α-6T) grown by thermal evaporation on TiO 2 –PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO 2 –PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2×) increase in mobility with increasing TiO 2 –PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation rate produces organic polycrystalline films with small grain

On the whistling of corrugated pipes with narrow cavities

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; González Diez, N.; Bendiksen, E.; Frimodt, C.

2013-01-01

Pipes with a corrugated inner surface, as used inflexible pipes for gas production and transport, can be subject to Flow-Induced Pulsations when the flow velocities are higher than a certain onset velocity. The onset velocity for classical corrugated pipes can be predicted on basis of the geometry

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

Science.gov (United States)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

Fracture Behaviours in Compression-loaded Triangular Corrugated Core Sandwich Panels

Directory of Open Access Journals (Sweden)

Zaid N.Z.M.

2016-01-01

Full Text Available The failure modes occurring in sandwich panels based on the corrugations of aluminium alloy, carbon fibre-reinforced plastic (CFRP and glass fibre-reinforced plastic (GFRP are analysed in this work. The fracture behaviour of these sandwich panels under compressive stresses is determined through a series of uniform lateral compression performed on samples with different cell wall thicknesses. Compression test on the corrugated-core sandwich panels were conducted using an Instron series 4505 testing machine. The post-failure examinations of the corrugated-core in different cell wall thickness were conducted using optical microscope. Load-displacement graphs of aluminium alloy, GFRP and CFRP specimens were plotted to show progressive damage development with five unit cells. Four modes of failure were described in the results: buckling, hinges, delamination and debonding. Each of these failure modes may dominate under different cell wall thickness or loading condition, and they may act in combination. The results indicate that thicker composites corrugated-core panels tend can recover more stress and retain more stiffness. This analysis provides a valuable insight into the mechanical behaviour of corrugated-core sandwich panels for use in lightweight engineering applications.

Numerical investigation of the aerodynamic and structural characteristics of a corrugated wing

Science.gov (United States)

Hord, Kyle

Previous experimental studies on static, bio-inspired corrugated wings have shown that they produce favorable aerodynamic properties such as delayed stall compared to streamlined wings and flat plates at high Reynolds numbers (Re ≥ 4x104). The majority of studies have been carried out with scaled models of dragonfly forewings from the Aeshna Cyanea in either wind tunnels or water channels. In this thesis, the aerodynamics of a corrugated airfoil was studied using computational fluid dynamics methods at a low Reynolds number of 1000. Structural analysis was also performed using the commercial software SolidWorks 2009. The flow field is described by solving the incompressible Navier-Stokes equations on an overlapping grid using the pressure-Poisson method. The equations are discretized in space with second-order accurate central differences. Time integration is achieved through the second-order Crank-Nicolson implicit method. The complex vortex structures that form in the corrugated airfoil valleys and around the corrugated airfoil are studied in detail. Comparisons are made with experimental measurements from corrugated wings and also with simulations of a flat plate. Contrary to the studies at high Reynolds numbers, our study shows that at low Reynolds numbers the wing corrugation does not provide any aerodynamic benefit compared to a smoothed flat plate. Instead, the corrugated profile generates more pressure drag which is only partially offset by the reduction of friction drag, leading to more total drag than the flat plate. Structural analysis shows that the wing corrugation can increase the resistance to bending moments on the wing structure. A smoothed structure has to be three times thicker to provide the same stiffness. It was concluded the corrugated wing has the structural benefit to provide the same resistance to bending moments with a much reduced weight.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Science.gov (United States)

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-05-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

Plasma polymerized high energy density dielectric films for capacitors

Science.gov (United States)

Yamagishi, F. G.

1983-01-01

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Design and manufacturing of skins based on composite corrugated laminates for morphing aerodynamic surfaces

Science.gov (United States)

Airoldi, Alessandro; Fournier, Stephane; Borlandelli, Elena; Bettini, Paolo; Sala, Giuseppe

2017-04-01

The paper discusses the approaches for the design and manufacturing of morphing skins based on rectangular-shaped composite corrugated laminates and proposes a novel solution to prevent detrimental effects of corrugation on aerodynamic performances. Additionally, more complex corrugated shapes are presented and analysed. The manufacturing issues related to the production of corrugated laminates are discussed and tests are performed to compare different solutions and to assess the validity of analytical and numerical predictions. The solution presented to develop an aerodynamically efficient skin consists in the integration of an elastomeric cover in the corrugated laminate. The related manufacturing process is presented and assessed, and a fully nonlinear numerical model is developed and characterized to study the behaviour of this skin concept in different load conditions. Finally, configurations based on combinations of individual rectangular-shaped corrugated panels are considered. Their structural properties are numerically investigated by varying geometrical parameters. Performance indices are defined to compare structural stiffness contributions in non-morphing directions with the ones of conventional panels of the same weight. Numerical studies also show that the extension of the concept to complex corrugated shapes may improve both the design flexibility and some specific performances with respect to rectangular shaped corrugations. The overall results validate the design approaches and manufacturing processes to produce corrugated laminates and indicate that the solution for the integration of an elastomeric cover is a feasible and promising method to enhance the aerodynamic efficiency of corrugated skins.

Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

2013-12-02

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

Directory of Open Access Journals (Sweden)

Tao Zhang

2015-01-01

Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

Science.gov (United States)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

Mass transfer in corrugated-plate membrane modules. II. Ultrafiltration experiments

NARCIS (Netherlands)

van der Waal, M.J.; Stevanovic, S.; Racz, I.G.

1989-01-01

The application of corrugations as turbulence promoters in membrane filtration was studied. In ultrafiltration experiments with polysulfone membranes using Dextran T70 as solute, it was found that the corrugations result in reduced energy consumption or pressure drop compared with flat membranes at

Dynamic tension testing equipment for paperboard and corrugated fiberboard

Science.gov (United States)

W. D. Godshall

1965-01-01

The objective of this work was to develop a method, the testing equipment, and the instrumentation with which dynamic stress-strain information may be obtained for paperboards and built-up corrugated fiberboards as used in corrugated fiberboard containers. Much information is available on the properties of these materials when subjected to static or low rates of...

Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating

Energy Technology Data Exchange (ETDEWEB)

Iyore, O.D.; Roodenko, K.; Winkler, P.S. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Noriega, J.R.; Vasselli, J.J. [Electrical Engineering Department, The University of Texas at Tyler, Tyler, TX 75799 (United States); Chabal, Y.J. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B.E., E-mail: gnade@utdallas.edu [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States)

2013-12-02

We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors fabricated using standard semiconductor processing techniques. We characterize the capacitors using in-situ vibrational spectroscopy during thermally-assisted poling and correlate the Fourier transform infrared spectroscopy (FTIR) results with X-ray diffraction (XRD) results. FTIR analysis of the neat PVDF-HFP showed α → β transformations during poling at room temperature and at 55 °C. α → β transformations were observed for the crosslinked polymer only during poling at 55 °C. XRD data revealed that photo-crosslinking caused the polymer to partially crystallize into the β-phase. The similar behavior of the neat and crosslinked samples at 55 °C suggests that a higher activation energy was needed for α → β transformations in crosslinked PVDF-HFP during poling. Electrical measurements showed that photo-crosslinking had no significant effect on the dielectric constant and dielectric loss of PVDF-HFP. However, the dielectric strength and maximum energy density of the crosslinked polymer were severely reduced. - Highlights: • Polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) dielectrics were studied. • Phase transformations were observed only at 55 °C for the crosslinked PVDF-HFP. • Crosslinking had no strong effect on the dielectric constant of PVDF-HFP. • Breakdown strengths were 620 MVm{sup −1} and 362 MVm{sup −1} for neat and crosslinked films.

Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

Science.gov (United States)

Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

2014-08-01

Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

Science.gov (United States)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

Science.gov (United States)

Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

2005-08-01

In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

Atom chips in the real world: the effects of wire corrugation

Science.gov (United States)

Schumm, T.; Estève, J.; Figl, C.; Trebbia, J.-B.; Aussibal, C.; Nguyen, H.; Mailly, D.; Bouchoule, I.; Westbrook, C. I.; Aspect, A.

2005-02-01

We present a detailed model describing the effects of wire corrugation on the trapping potential experienced by a cloud of atoms above a current carrying micro wire. We calculate the distortion of the current distribution due to corrugation and then derive the corresponding roughness in the magnetic field above the wire. Scaling laws are derived for the roughness as a function of height above a ribbon shaped wire. We also present experimental data on micro wire traps using cold atoms which complement some previously published measurements [CITE] and which demonstrate that wire corrugation can satisfactorily explain our observations of atom cloud fragmentation above electroplated gold wires. Finally, we present measurements of the corrugation of new wires fabricated by electron beam lithography and evaporation of gold. These wires appear to be substantially smoother than electroplated wires.

Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

International Nuclear Information System (INIS)

Guerfi, Y; Doucet, J B; Larrieu, G

2015-01-01

Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness. (paper)

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

2010-01-01

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.

2010-06-29

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Influence of presence of inclined centered baffle and corrugation frequency on natural convection heat transfer flow of air inside a square enclosure with corrugated side walls

Energy Technology Data Exchange (ETDEWEB)

Hussain, Salam Hadi; Jabbar, Mohammed Yousif; Mohamad, Ahmad Saddy [Mechanical Engineering Department, College of Engineering, Babylon University, Babylon Province (Iraq)

2011-09-15

The main objective of this study is to investigate the effect of presence of insulated inclined centered baffle and corrugation frequency on the steady natural convection in a sinusoidal corrugated enclosure. The present study is based on such a configuration where the two vertical sinusoidal walls are maintained at constant low temperature whereas a constant heat flux source whose length is 80% of the width of the enclosure is discretely embedded in the bottom wall. The remaining parts of the bottom wall and the top wall are adiabatic. The finite volume method has been used to solve the governing Navier-Stokes and the energy conservation equations of the fluid medium in the enclosure in order to investigate the effects of baffle inclination angles, corrugation frequencies and Grashof numbers on the fluid flow and heat transfer in the enclosure. The values of the governing parameters are the Grashof number Gr (10{sup 3}-10{sup 6}), the corrugation frequencies CF (1, 2 and 3), baffle inclination angles (0 deg. {<=} {phi} {<=} 150 deg.) and Prandtl number Pr (0.71). Results are presented in the form of streamline and isotherm plots. The results of this investigation are illustrated that the average Nusselt number increases with increase in both the Grashof number and corrugation frequency for different baffle inclination angles and the presence of inclined baffle and increasing the corrugation frequency have significant effects on the average Nusselt numbers, streamlines and isotherms inside the enclosure. The obtained numerical results have been compared with literature ones, and it gives a reliable agreement. (authors)

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Science.gov (United States)

Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-12-18

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

2014-01-01

-dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

Size effects on structural and dielectric properties of PZT thin films at compositions around the morpho tropic phase boundary

International Nuclear Information System (INIS)

Lima, Elton Carvalho; Araujo, Eudes Borges; Souza Filho, Antonio Gomes de; Bdikin, Igor

2011-01-01

Full text: The demand for portability in consumer electronics has motivated the understanding of size effects on ferroelectric thin films. The actual comprehension of these effects in ferroelectrics is unsatisfactory, since the polarization interacts more strongly than other order parameters such as strain and charge. As a result, extrinsic effects are produced if these variables are uncontrolled and problems such as ferroelectric paraelectric phase transition at nanometers scale remains an unsolved issue. In the present work, the effects of thickness and compositional fractions on the structural and dielectric properties of PbZr 1-x Ti x O 3 (PZT) thin films were studied at a composition around the morphotropic phase boundary (x = 0.50). For this purpose, thin films with different thicknesses and different PbO excess were deposited on Si(100) and Pt=T iO 2 =SiO 2 =Si substrates by a chemical method and crystallized in electric furnace at 700 deg C for 1 hour. The effects of substrate, pyrolysis temperature and excess lead addition in the films are reported. For films with 10 mol% PbO in excess, the pyrolysis in the regime of 300 deg C for 30 minutes was observed to yield PZT pyrochlore free thin films deposited on Pt=T iO 2 =SiO 2 =Si substrate. Out this condition, the transformation from amorphous to the pyrochlore metastable phase is kinetically more favorable that a transformation to the perovskite phase, which is thermodynamically stable. Rietveld refinements based on X-ray diffraction results showed that films present a purely tetragonal phase and that this phase does not change when the film thickness decreases. The dielectric permittivity measurements showed a monoclinic → tetragonal phase transition at 198K. Results showed that the dielectric permittivity (ε) increases continuously from 257 to 463, while the thickness of the PZT films increases from 200 to 710 nm. These results suggests that interface pinning centers can be the responsible mechanism by

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Directory of Open Access Journals (Sweden)

Glenda Biasotto

2011-03-01

Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

KAUST Repository

McKerricher, Garret

2017-05-03

There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

International Nuclear Information System (INIS)

Abdel-Aziz, M.M.; Azim, Osama A.; Abdel-Wahab, L.A.; Seddik, Mohamed M.

2006-01-01

The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2 O 3 ), Hafnium dioxide (HfO 2 ), and Lima (mixture of oxides SiO 2 /Al 2 O 3 ); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A

UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

Science.gov (United States)

Abdel-Aziz, M. M.; Azim, Osama A.; Abdel-Wahab, L. A.; Seddik, Mohamed M.

2006-10-01

The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2O 3), Hafnium dioxide (HfO 2), and Lima (mixture of oxides SiO 2/Al 2O 3); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A.

Impedance spectroscopic and dielectric analysis of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A. [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia); Kahouli, A., E-mail: kahouli.kader@yahoo.fr [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia); Sylvestre, A., E-mail: alain.sylvestre@grenoble.cnrs.fr [Grenoble Electrical Engineering Laboratory (G2E Lab), CNRS, University of Grenoble (UJF), 25 Rue des Martyrs, BP 166, 38042 Grenoble Cedex 9 (France); Defaye, E. [CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Yangui, B. [Laboratory of Materials, Organization and Properties (LMOP), Campus Universities, El Manar, 2092 Tunis (Tunisia)

2012-07-15

Highlights: Black-Right-Pointing-Pointer The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3}. Black-Right-Pointing-Pointer The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. Black-Right-Pointing-Pointer The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. Black-Right-Pointing-Pointer The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with Pt/BST/Pt/TiO{sub 2}/SiO{sub 2} structure was prepared by ion beam sputtering. The film was post annealed at 700 Degree-Sign C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1-10{sup 5} Hz] at different temperatures [175-350 Degree-Sign C]. The Nyquist plots (Z Double-Prime vs . Z Prime ) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z Double-Prime and M Double-Prime are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M{sup Double-Prime }/M{sup Double-Prime }{sub max} shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

Role of Bénard-Marangoni instabilities during solvent evaporation in polymer surface corrugations.

Science.gov (United States)

Bassou, N; Rharbi, Y

2009-01-06

Film formation through the drying of polymer solutions is a widely used process in laboratories and in many industrial applications such as coatings. One of the main goals of these applications is to control the film surface morphology. In many cases, evaporation has been found to yield corrugated patterns on the free surface of films. This has been interpreted in terms of either mechanical or hydrodynamic instabilities. In this article, we present experimental results where mesoscale 2D well-ordered surface corrugation patterns are formed during solvent evaporation from polystyrene/toluene solutions. The transformation of Benard-Marangoni instabilities into surface corrugation is studied during the entire drying process using particle tracking, 3D morphology analyses, etc. We show that the corrugation wavelength is controlled by the Benard-Marangoni instability, whereas the corrugation amplitude is controlled by a mechanism that involves a high evaporation rate.

Stylus type MEMS texture sensor covered with corrugated diaphragm

Science.gov (United States)

Tsukamoto, Takashiro; Asao, Hideaki; Tanaka, Shuji

2017-09-01

In this paper, a stylus type MEMS texture sensor covered with a corrugated palylene diaphragm, which prevent debris from jamming into the sensor without significant degradation of sensitivity and bandwidth, was reported. A new fabrication process using a lost-foil method to make the corrugated diaphragm on a 3-axis piezoresistive force sensor at wafer level has been developed. The texture sensor could detect the surface microstructure as small as about 10 \

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

Science.gov (United States)

Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

International Nuclear Information System (INIS)

Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

2009-01-01

Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

Study of surface-modified PVP gate dielectric in organic thin film transistors with the nano-particle silver ink source/drain electrode.

Science.gov (United States)

Yun, Ho-Jin; Ham, Yong-Hyun; Shin, Hong-Sik; Jeong, Kwang-Seok; Park, Jeong-Gyu; Choi, Deuk-Sung; Lee, Ga-Won

2011-07-01

We have fabricated the flexible pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics treated by CF4/O2 plasma on poly[ethersulfones] (PES) substrate. The solution of gate dielectrics is made by adding methylated poly[melamine-co-formaldehyde] (MMF) to PVP. The PVP gate dielectric layer was cross linked at 90 degrees under UV ozone exposure. Source/drain electrodes are formed by micro contact printing (MCP) method using nano particle silver ink for the purposes of low cost and high throughput. The optimized OTFT shows the device performance with field effect mobility of the 0.88 cm2/V s, subthreshold slope of 2.2 V/decade, and on/off current ratios of 1.8 x 10(-6) at -40 V gate bias. We found that hydrophobic PVP gate dielectric surface can influence on the initial film morphologies of pentacene making dense, which is more important for high performance OTFTs than large grain size. Moreover, hydrophobic gate dielelctric surface reduces voids and -OH groups that interrupt the carrier transport in OTFTs.

Fast rail corrugation detection based on texture filtering

Science.gov (United States)

Xiao, Jie; Lu, Kaixia

2018-02-01

The condition detection of rails in high-speed railway is one of the important means to ensure the safety of railway transportation. In order to replace the traditional manual inspection, save manpower and material resources, and improve the detection speed and accuracy, it is of great significance to develop a machine vision system for locating and identifying defects on rails automatically. Rail defects exhibit different properties and are divided into various categories related to the type and position of flaws on the rail. Several kinds of interrelated factors cause rail defects such as type of rail, construction conditions, and speed and/or frequency of trains using the rail. Rail corrugation is a particular kind of defects that produce an undulatory deformation on the rail heads. In high speed train, the corrugation induces harmful vibrations on wheels and its components and reduces the lifetime of rails. This type of defects should be detected to avoid rail fractures. In this paper, a novel method for fast rail corrugation detection based on texture filtering was proposed.

AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

Science.gov (United States)

Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

2017-11-01

Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

Bandwidth Study of the Microwave Reflectors with Rectangular Corrugations

Science.gov (United States)

Zhang, Liang; He, Wenlong; Donaldson, Craig R.; Cross, Adrian W.

2016-09-01

The mode-selective microwave reflector with periodic rectangular corrugations in the inner surface of a circular metallic waveguide is studied in this paper. The relations between the bandwidth and reflection coefficient for different numbers of corrugation sections were studied through a global optimization method. Two types of reflectors were investigated. One does not consider the phase response and the other does. Both types of broadband reflectors operating at W-band were machined and measured to verify the numerical simulations.

Numerical Investigation of the Fully-Developed Periodic Flow Field for Optimal Heat Transfer in Spirally Corrugated Tubes

DEFF Research Database (Denmark)

Hærvig, Jakob; Condra, Thomas Joseph; Sørensen, Kim

Even though the corrugated tube is a widely used technique to enhance transfer heat, the exact heat transfer enhancing mechanism remains relatively un-documented. Most studies attribute the favourable heat transfer characteristics to a swirling flow being present at higher corrugation....... In this study, a systematic approach relying on Computational Fluid Dynamics (CFD) is used to study and compare the heat transfer characteristics with the detailed flow field in the spirally corrugated tubes. By comparing the flow in 12 different spirally corrugated tubes at a fixed Reynolds number of 5000......, this study compares the flow field with the surface averaged Nusselt number to gain valuable insight into which flow phenomena causes favourable heat transfer characteristics. While the flow at low corrugations approximates the non-corrugated tube, higher corrugations of h/D creates a significant tangential...

A corrugated perfect magnetic conductor surface supporting spoof surface magnon polaritons.

Science.gov (United States)

Liu, Liang-liang; Li, Zhuo; Gu, Chang-qing; Ning, Ping-ping; Xu, Bing-zheng; Niu, Zhen-yi; Zhao, Yong-jiu

2014-05-05

In this paper, we demonstrate that spoof surface magnon polaritons (SSMPs) can propagate along a corrugated perfect magnetic conductor (PMC) surface. From duality theorem, the existence of surface electromagnetic modes on corrugated PMC surfaces are manifest to be transverse electric (TE) mode compared with the transverse magnetic (TM) mode of spoof surface plasmon plaritons (SSPPs) excited on corrugated perfect electric conductor surfaces. Theoretical deduction through modal expansion method and simulation results clearly verify that SSMPs share the same dispersion relationship with the SSPPs. It is worth noting that this metamaterial will have more similar properties and potential applications as the SSPPs in large number of areas.

Constructive fire protection of steel corrugated beams of buildings and other structures

Directory of Open Access Journals (Sweden)

Ilyin Nikolay

2017-01-01

Full Text Available The research introduces a methodology of establishing indicators of fire safety of a building in relation to a guaranteed duration of steel fire-proof corrugated beams resistance in conditions of standard fire tests. Indicators of fire safety are also established in the assessment of design limits of steel fire-proof corrugated beams during design process, construction or maintenance of the building as well as in reducing economic costs when testing steel structures for fire resisting property. The suggested methodology introduces the system of actions aimed to design constructive fire protection of steel corrugated beams of buildings. Technological effect is achieved by conducting firing tests of steel construction by non-destructive methods; the evaluation of fire resistance of fire-proof elements of corrugated beams (corrugated web, upper and lower shelves is identified by the least fire-proof element of a welded I-beam. In this methodology fire resistance duration of the constituent elements of a welded I-beam with account of its fire protection ability is described with an analytic function taken as variables. These variables are intensity strength of stresses and the degree of fire protection of a compound element.

Heat transfer enhancement and pumping power optimization using CuO-water nanofluid through rectangular corrugated pipe

Science.gov (United States)

Salehin, Musfequs; Ehsan, Mohammad Monjurul; Islam, A. K. M. Sadrul

2017-06-01

Heat transfer enhancement by corrugation in fluid domain is a popular method. The rate of improvement is more when it is used highly thermal conductive fluid as heating or cooling medium. In this present study, heat transfer augmentation was investigated numerically by implementing corrugation in the fluid domain and nanofluid as the base fluid in the turbulent forced convection regime. Finite volume method (FVM) was applied to solve the continuity, momentum and energy equations. All the numerical simulations were considered for single phase flow. A rectangle corrugated pipe with 5000 W/m2 constant heat flux subjected to the corrugated wall was considered as the fluid domain. In the range of Reynolds number 15000 to 40000, thermo-physical and hydrodynamic behavior was investigated by using CuO-water nanofluid from 1% to 5% volume fraction as the base fluid through the corrugated fluid domain. Corrugation justification was performed by changing the amplitude of the corrugation and the corrugation wave length for obtaining the increased heat transfer rate with minimum pumping power. For using CuO-water nanofluid, augmentation was also found more in the rectangle corrugated pipe both in heat transfer and pumping power requirement with the increase of Reynolds number and the volume fraction of nanofluid. For the increased pumping power, optimization of pumping power by using nanofluid was also performed for economic finding.

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Waste paper recycling opportunities for government action. Vol. 4, corrugated waste. Final report

Energy Technology Data Exchange (ETDEWEB)

Bailey, J.; Love, P.

1978-01-01

This study analyzes current and expected corrugated waste market conditions in Canada, with the objective of identifying government initiatives which could permanently increase recovery levels. Short-term, practical measures are featured. National and regional demand, generation and recovery levels are examined, along with imports and exports to the USA. Over 70% of corrugated waste is consumed in Ontario and Quebec, and most of this waste is generated in those two provinces. Average recovery rates in most major urban areas are estimated at 30-40%. Future demand, generation, and recovery are estimated, and it is suggested that there will be enough domestic demand to permit reclamation of nearly 35% of Canada's total corrugated wastes. This potential level is not expected to change significantly, and new demand opportunities appear minimal. Examination of the potential for future imports from the USA indicates that availability will tighten over the medium term, necessitating a search for new corrugated waste supply sources. Possible sources include supermakets, retail chains and large assembly manufacturing establishments; one of the most promising of these sources is shopping malls, and a study is appended which examines the feasibility of a corrugated waste source separation program within a hypothetical mall. Possible government actions are outlined to improve reclamation and recycling of corrugated waste in Canada, including the improvement of local recovery capabilities in British Columbia, Ontario and Quebec, and the reduction of freight costs for moving corrugated waste from low-recovery areas to high-demand areas. 26 refs., 9 figs., 31 tabs.

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

Science.gov (United States)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

Numerical analysis of beam with sinusoidally corrugated webs

Science.gov (United States)

Górecki, Marcin; Pieńko, Michał; Łagoda, GraŻyna

2018-01-01

The paper presents numerical tests results of the steel beam with sinusoidally corrugated web, which were performed in the Autodesk Algor Simulation Professional 2010. The analysis was preceded by laboratory tests including the beam's work under the influence of the four point bending as well as the study of material characteristics. Significant web's thickness and use of tools available in the software allowed to analyze the behavior of the plate girder as beam, and also to observe the occurrence of stresses in the characteristic element - the corrugated web. The stress distribution observed on the both web's surfaces was analyzed.

Dielectric properties of Li doped Li-Nb-O thin films

Energy Technology Data Exchange (ETDEWEB)

Perentzis, G.; Horopanitis, E.E.; Papadimitriou, L. [Aristotle University of Thessaloniki, Department of Physics, 54124 Thessaloniki (Greece); Durman, V.; Saly, V.; Packa, J. [Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava (Slovakia)

2007-03-15

Lithium niobate LiNbO{sub 3} was prepared as a thin film layered structure deposited on stainless steel substrate using e-gun evaporation. The Li doping was provided for by the formation of Li-Nb-O/Li/LiNb-O sandwich structure and annealing at about 250 C. AC impedance spectroscopy measurements were performed on the samples at temperatures from the interval between 28 and 165 C and in a frequency range of 10{sup -3} to 10{sup 6} Hz. Using the values Z' and Z'' at different frequencies, the dielectric parameters - parts of the complex permittivity {epsilon}' and {epsilon}'' and loss tangent tan {delta} were calculated. The results prove validity of the proposed equivalent circuit containing parallel RC elements connected in series where the first RC element represents the bulk of material and the second RC element belongs to the double layer at the metal interface. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dielectric properties of Ca(Zr0.05Ti0.95)O3 thin films prepared by chemical solution deposition

International Nuclear Information System (INIS)

Cavalcante, L.S.; Simoes, A.Z.; Santos, L.P.S.; Santos, M.R.M.C.; Longo, E.; Varela, J.A.

2006-01-01

Ca(Zr 0.05 Ti 0.95 )O 3 (CZT) thin films were grown on Pt(111)/Ti/SiO 2 /Si(100) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928K for 4h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47nm and thickness about 450nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100kHz and 0.032 at 1MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5μC/cm 2 , and coercive field of 18kV/cm, at an applied voltage of 6V. The leakage current density was about 4.6x10 -8 A/cm 2 at 3V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields

Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

Science.gov (United States)

Khound, Sagarika; Sarma, Ranjit

2018-01-01

We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

Experimental Investigation of an X-Band Tunable Dielectric Accelerating Structure

CERN Document Server

Kanareykin, Alex; Karmanenko, Sergei F; Nenasheva, Elisaveta; Power, John G; Schoessow, Paul; Semenov, Alexei

2005-01-01

Experimental study of a new scheme to tune the resonant frequency for dielectric based accelerating structure (driven either by the wakefield of a beam or an external rf source) is underway. The structure consists of a single layer of conventional dielectric surrounded by a very thin layer of ferroelectric material situated on the outside. Carefully designed electrodes are attached to a thin layer of ferroelectric material. A DC bias can be applied to the electrodes to change the permittivity of the ferroelectric layer and therefore, the dielectric overall resonant frequency can be tuned. In this paper, we present the test results for an 11.424 GHz rectangular DLA prototype structure that the ferroelectric material's dielectric constant of 500 and show that a frequency tuning range of 2% can be achieved. If successful, this scheme would compensate for structure errors caused by ceramic waveguide machining tolerances and dielectric constant heterogeneity.

Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

Science.gov (United States)

Li, Xue; Niitsoo, Olivia; Couzis, Alexander

2016-03-01

An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. Copyright © 2015 Elsevier Inc. All rights reserved.

On the Fully-Developed Heat Transfer Enhancing Flow Field in Sinusoidally, Spirally Corrugated Tubes Using Computational Fluid Dynamics

DEFF Research Database (Denmark)

Hærvig, Jakob; Sørensen, Kim; Condra, Thomas Joseph

2017-01-01

A numerical study has been carried out to investigate heat transfer enhancing flow field in 28 geometrically different sinusoidally, spirally corrugated tubes. To vary the corrugation, the height of corrugation e/D and the length between two successive corrugated sections p/D are varied in the ra...

Inkjet printing of UHF antennas on corrugated cardboards for packaging applications

Energy Technology Data Exchange (ETDEWEB)

Sowade, Enrico, E-mail: enrico.sowade@mb.tu-chemnitz.de [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Göthel, Frank [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Zichner, Ralf [Department Printed Functionalities, Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz (Germany); Baumann, Reinhard R. [Digital Printing and Imaging Technology, Technische Universität Chemnitz, Chemnitz (Germany); Department Printed Functionalities, Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz (Germany)

2015-03-30

Highlights: • Inkjet printing of UHF antennas on cardboard substrates. • Development of primer layer to compensate the absorptiveness of the cardboard and the rough surface. • Manufacturing of UHF antennas in a fully digital manner for packaging applications. - Abstract: In this study, a method based on inkjet printing has been established to develop UHF antennas on a corrugated cardboard for packaging applications. The use of such a standardized, paper-based packaging substrate as material for printing electronics is challenging in terms of its high surface roughness and high ink absorption rate, especially when depositing very thin films with inkjet printing technology. However, we could obtain well-defined silver layers on the cardboard substrates due to a primer layer approach. The primer layer is based on a UV-curable ink formulation and deposited as well as the silver ink with inkjet printing technology. Industrial relevant printheads were chosen for the deposition of the materials. The usage of inkjet printing allows highest flexibility in terms of pattern design. The primer layer was proven to optimize the surface characteristics of the substrate, mainly reducing the surface roughness and water absorptiveness. Thanks to the primer layer approach, ultra-high-frequency (UHF) radio-frequency identification (RFID) antennas were deposited by inkjet printing on the corrugated cardboards. Along with the characterization and interpretation of electrical properties of the established conductive antenna patterns, the performance of the printed antennas were analyzed in detail by measuring the scattering parameter S{sub 11} and the antenna gain.

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

International Nuclear Information System (INIS)

Sielski, Jan; Jeszka, Jeremiasz K.

2012-01-01

The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

[Progressive damage monitoring of corrugated composite skins by the FBG spectral characteristics].

Science.gov (United States)

Zhang, Yong; Wang, Bang-Feng; Lu, Ji-Yun; Gu, Li-Li; Su, Yong-Gang

2014-03-01

In the present paper, a method of monitoring progressive damage of composite structures by non-uniform fiber Bragg grating (FBG) reflection spectrum is proposed. Due to the finite element analysis of corrugated composite skins specimens, the failure process under tensile load and corresponding critical failure loads of corrugated composite skin was predicated. Then, the non-uniform reflection spectrum of FBG sensor could be reconstructed and the corresponding relationship between layer failure order sequence of corrugated composite skin and FBG sensor reflection spectrums was acquired. A monitoring system based on FBG non-uniform reflection spectrum, which can be used to monitor progressive damage of corrugated composite skins, was built. The corrugated composite skins were stretched under this FBG non-uniform reflection spectrum monitoring system. The results indicate that real-time spectrums acquired by FBG non-uniform reflection spectrum monitoring system show the same trend with the reconstruction reflection spectrums. The maximum error between the corresponding failure and the predictive value is 8.6%, which proves the feasibility of using FBG sensor to monitor progressive damage of corrugated composite skin. In this method, the real-time changes in the FBG non-uniform reflection spectrum within the scope of failure were acquired through the way of monitoring and predicating, and at the same time, the progressive damage extent and layer failure sequence of corru- gated composite skin was estimated, and without destroying the structure of the specimen, the method is easy and simple to operate. The measurement and transmission section of the system are completely composed of optical fiber, which provides new ideas and experimental reference for the field of dynamic monitoring of smart skin.

Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors

International Nuclear Information System (INIS)

Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi

2001-01-01

The effect of interfacial layers on the dielectric properties in very thin SrBi 2 Ta 2 O 9 (SBT) capacitors has been investigated using static measurements. Total permittivity (ε t ) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The contribution of the interfacial capacitance (C int ) and bulk capacitance to the total capacitance indicates that C int of the Ir/SBT/Pt structure was lower than that of the Pt/SBT/Pt structure, while the bulk permittivity (ε b ) was essentially the same. The dispersion of all capacitors followed the power law, while the Ir/SBT/Pt capacitor showed a larger dispersion of C int . These results suggest that the Pt/SBT/Pt capacitor is preferred for obtaining the high performance with less effect of the interfacial layers on the dielectric properties. [copyright] 2001 American Institute of Physics

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

2016-01-01

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud

2016-08-24

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Mechanical property changes in porous low-k dielectric thin films during processing

Energy Technology Data Exchange (ETDEWEB)

Stan, G., E-mail: gheorghe.stan@nist.gov; Gates, R. S. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kavuri, P. [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

2014-10-13

The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

Effect of varying geometrical parameters of trapezoidal corrugated-core sandwich structure

Directory of Open Access Journals (Sweden)

Zaid N.Z.M.

2017-01-01

Full Text Available Sandwich structure is an attractive alternative that increasingly used in the transportation and aerospace industry. Corrugated-core with trapezoidal shape allows enhancing the damage resistance to the sandwich structure, but on the other hand, it changes the structural response of the sandwich structure. The aim of this paper is to study the effect of varying geometrical parameters of trapezoidal corrugated-core sandwich structure under compression loading. The corrugated-core specimen was fabricated using press technique, following the shape of trapezoidal shape. Two different materials were used in the study, glass fibre reinforced plastic (GFRP and carbon fibre reinforced plastic (CFRP. The result shows that the mechanical properties of the core in compression loading are sensitive to the variation of a number of unit cells and the core thickness.

Theory of static friction: temperature and corrugation effects

International Nuclear Information System (INIS)

Franchini, A; Brigazzi, M; Santoro, G; Bortolani, V

2008-01-01

We present a study of the static friction, as a function of temperature, between two thick solid slabs. The upper one is formed of light particles and the substrate of heavy particles. We focus our attention on the interaction between the phonon fields of the two blocks and on the interface corrugation, among the various mechanisms responsible for the friction. To give evidence of the role played by the dynamical interaction of the substrate with the upper block, we consider both a substrate formed by fixed atoms and a substrate formed by mobile atoms. To study the effect of the corrugation, we model it by changing the range parameter σ in the Lennard-Jones interaction potential. We found that in the case of the mobile substrate there is a large momentum transfer from the substrate to the upper block. This momentum transfer increases on increasing the temperature and produces a large disorder in the upper block favouring a decrease of the static friction with respect to the case for a rigid substrate. Reducing the corrugation, we found that with a rigid substrate the upper block becomes nearly commensurate, producing an enhancement of the static friction with respect to that with a mobile substrate

Direct measurements of acoustic damping and sound amplification in corrugated pipes with flow

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; Vijlbrief, O.; Lunde, K.

2015-01-01

The flow-induced pulsations in corrugated pipes result from a feedback loop between an acoustic resonator and the noise amplification at each shear layer in the axisymmetric cavities forming the corrugations. The quality factor of the resonator is determined by the reflection coefficients at the

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

Directory of Open Access Journals (Sweden)

Junsheng Liang

2016-01-01

Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

Directory of Open Access Journals (Sweden)

Shangxiong Zhou

2018-05-01

Full Text Available In this paper, a high-k metal-oxide film (ZrO2 was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD, X-ray reflectivity (XRR and atomic force microscopy (AFM. Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.

Structural-optical study of high-dielectric-constant oxide films

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

2006-10-31

High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

International Nuclear Information System (INIS)

Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

2008-01-01

Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

Science.gov (United States)

Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

2013-01-08

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

Infrared and THz spectroscopy of nanostructured dielectrics

Directory of Open Access Journals (Sweden)

Jan Petzelt

2009-09-01

Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

Science.gov (United States)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Numerical analysis of sandwich beam with corrugated core under three-point bending

Energy Technology Data Exchange (ETDEWEB)

Wittenbeck, Leszek [Poznan University of Technology, Institute of Mathematics Piotrowo Street No. 5, 60-965 Poznan (Poland); Grygorowicz, Magdalena; Paczos, Piotr [Poznan University of Technology, Institute of Applied Mechanics Jana Pawla IIStreet No. 24, 60-965 Poznan (Poland)

2015-03-10

The strength problem of sandwich beam with corrugated core under three-point bending is presented.The beam are made of steel and formed by three mutually orthogonal corrugated layers. The finite element analysis (FEA) of the sandwich beam is performed with the use of the FEM system - ABAQUS. The relationship between the applied load and deflection in three-point bending is considered.

Kinetically controlled glass transition measurement of organic aerosol thin films using broadband dielectric spectroscopy

Directory of Open Access Journals (Sweden)

Y. Zhang

2018-06-01

Full Text Available Glass transitions from liquid to semi-solid and solid phase states have important implications for reactivity, growth, and cloud-forming (cloud condensation nuclei and ice nucleation capabilities of secondary organic aerosols (SOAs. The small size and relatively low mass concentration of SOAs in the atmosphere make it difficult to measure atmospheric SOA glass transitions using conventional methods. To circumvent these difficulties, we have adapted a new technique for measuring glass-forming properties of atmospherically relevant organic aerosols. Aerosol particles to be studied are deposited in the form of a thin film onto an interdigitated electrode (IDE using electrostatic precipitation. Dielectric spectroscopy provides dipole relaxation rates for organic aerosols as a function of temperature (373 to 233 K that are used to calculate the glass transition temperatures for several cooling or heating rates. IDE-enabled broadband dielectric spectroscopy (BDS was successfully used to measure the kinetically controlled glass transition temperatures of aerosols consisting of glycerol and four other compounds with selected cooling and heating rates. The glass transition results agree well with available literature data for these five compounds. The results indicate that the IDE-BDS method can provide accurate glass transition data for organic aerosols under atmospheric conditions. The BDS data obtained with the IDE-BDS technique can be used to characterize glass transitions for both simulated and ambient organic aerosols and to model their climate effects.

Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

International Nuclear Information System (INIS)

Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

2010-01-01

We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

Lamb wave band gaps in one-dimensional radial phononic crystal plates with periodic double-sided corrugations

Energy Technology Data Exchange (ETDEWEB)

Li, Yinggang [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); School of Transportation, Wuhan University of Technology, Wuhan 430070 (China); Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Li, Suobin [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China)

2015-11-01

In this paper, we present the theoretical investigation of Lamb wave propagation in one-dimensional radial phononic crystal (RPC) plates with periodic double-sided corrugations. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite element method based on two-dimensional axial symmetry models in cylindrical coordinates. Numerical results show that the proposed RPC plates with periodic double-sided corrugations can yield several band gaps with a variable bandwidth for Lamb waves. The formation mechanism of band gaps in the double-sided RPC plates is attributed to the coupling between the Lamb modes and the in-phase and out-phases resonant eigenmodes of the double-sided corrugations. We investigate the evolution of band gaps in the double-sided RPC plates with the corrugation heights on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Significantly, with the introduction of symmetric double-sided corrugations, the antisymmetric Lamb mode is suppressed by the in-phase resonant eigenmodes of the double-sided corrugations, resulting in the disappearance of the lowest band gap. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically.

Evaluation of Steel Shear Walls Behavior with Sinusoidal and Trapezoidal Corrugated Plates

Directory of Open Access Journals (Sweden)

Emad Hosseinpour

2015-01-01

Full Text Available Reinforcement of structures aims to control the input energy of unnatural and natural forces. In the past four decades, steel shear walls are utilized in huge constructions in some seismic countries such as Japan, United States, and Canada to lessen the risk of destructive forces. The steel shear walls are divided into two types: unstiffened and stiffened. In the former, a series of plates (sinusoidal and trapezoidal corrugated with light thickness are used that have the postbuckling field property under overall buckling. In the latter, steel profile belt series are employed as stiffeners with different arrangement: horizontal, vertical, or diagonal in one side or both sides of wall. In the unstiffened walls, increasing the thickness causes an increase in the wall capacity under large forces in tall structures. In the stiffened walls, joining the stiffeners to the wall is costly and time consuming. The ANSYS software was used to analyze the different models of unstiffened one-story steel walls with sinusoidal and trapezoidal corrugated plates under lateral load. The obtained results demonstrated that, in the walls with the same dimensions, the trapezoidal corrugated plates showed higher ductility and ultimate bearing compared to the sinusoidal corrugated plates.

Plasma influence on the dispersion properties of finite-length, corrugated waveguides

OpenAIRE

Shkvarunets, A.; Kobayashi, S.; Weaver, J.; Carmel, Y.; Rodgers, J.; Antonsen, T.; Granatstein, V.L.; Destler, W.W.; Ogura, K.; Minami, K.

1996-01-01

We present an experimental study of the electromagnetic properties of transverse magnetic modes in a corrugated-wall cavity filled with a radially inhomogeneous plasma. The shifts of the .resonant frequencies of a finite-length, corrugated cavity were measured as a function of the background plasma density and the dispersion diagram was reconstructed up to a peak plasma density of 1012 em - 3. Good agreement with a calculated dispersion diagram is obtained for plasma densities below 5 X 1011 ...

Oblique surface waves at an interface between a metal-dielectric superlattice and an isotropic dielectric

International Nuclear Information System (INIS)

Vuković, Slobodan M; Miret, Juan J; Zapata-Rodriguez, Carlos J; Jakšić, Zoran

2012-01-01

We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal-dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal-dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

Silicon Carbide Corrugated Mirrors for Space Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

Science.gov (United States)

Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

1996-01-01

Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

2012-07-01

We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

Science.gov (United States)

Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

2013-03-01

We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

Pressure drop and stability of flow in Archimedean spiral tube with transverse corrugations

Directory of Open Access Journals (Sweden)

Đorđević Milan

2016-01-01

Full Text Available Isothermal pressure drop experiments were carried out for the steady Newtonian fluid flow in Archimedean spiral tube with transverse corrugations. Pressure drop correlations and stability criteria for distinguishing the flow regimes have been obtained in a continuous Reynolds number range from 150 to 15 000. The characterizing geometrical groups which take into account all the geometrical parameters of Archimedean spiral and corrugated pipe has been acquired. Before performing experiments over the Archimedean spiral, the corrugated straight pipe having high relative roughness e/d = 0.129 of approximately sinusoidal type was tested in order to obtain correlations for the Darcy friction factor. Insight into the magnitude of pressure loss in the proposed geometry of spiral solar receiver for different flow rates is important because of its effect upon the efficiency of the receiver. Although flow in spiral and corrugated geometries has the advantages of compactness and high heat transfer rates, the disadvantage of greater pressure drops makes hydrodynamic studies relevant. [Projekat Ministarstva nauke Republike Srbije, br. III 42006 i br. TR 33015

Design of Ultra-Wideband Tapered Slot Antenna by Using Binomial Transformer with Corrugation

Science.gov (United States)

Chareonsiri, Yosita; Thaiwirot, Wanwisa; Akkaraekthalin, Prayoot

2017-05-01

In this paper, the tapered slot antenna (TSA) with corrugation is proposed for UWB applications. The multi-section binomial transformer is used to design taper profile of the proposed TSA that does not involve using time consuming optimization. A step-by-step procedure for synthesis of the step impedance values related with step slot widths of taper profile is presented. The smooth taper can be achieved by fitting the smoothing curve to the entire step slot. The design of TSA based on this method yields results with a quite flat gain and wide impedance bandwidth covering UWB spectrum from 3.1 GHz to 10.6 GHz. To further improve the radiation characteristics, the corrugation is added on the both edges of the proposed TSA. The effects of different corrugation shapes on the improvement of antenna gain and front-to-back ratio (F-to-B ratio) are investigated. To demonstrate the validity of the design, the prototypes of TSA without and with corrugation are fabricated and measured. The results show good agreement between simulation and measurement.

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

International Nuclear Information System (INIS)

Besleaga, C.; Stan, G.E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

2016-01-01

Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Energy Technology Data Exchange (ETDEWEB)

Besleaga, C.; Stan, G.E.; Pintilie, I. [National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele-Ilfov (Romania); Barquinha, P.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2016-08-30

Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

Fabrication of 20 nm half-pitch gratings by corrugation-directed self-assembly

International Nuclear Information System (INIS)

Kim, Ho-Cheol; Rettner, Charles T; Sundstroem, Linnea

2008-01-01

The evolution of the scaling of modern semiconductor devices is governed by the ability to create scalable high-resolution patterns on substrates. Since it is becoming increasingly difficult and expensive to extend to smaller dimensions using optical lithography, there is a great deal of interest in alternative patterning methods. The self-assembly of block copolymers in thin films, which provides periodic patterns of 10-50 nm length scales, has been recognized as a promising candidate for such patterning. To be practical, however, this approach must provide control over the orientation and lateral placement of the microdomains. We report here our discovery of the controlled alignment of the lamellar microdomains of a block copolymer containing hybrid material using topographic pre-patterns on substrates. We find that this hybrid material forms lamellae with a half-pitch of approximately 20 nm perpendicular to the lines of a surface corrugation

Atom chips in the real world: the effects of wire corrugation

OpenAIRE

Schumm , Thorsten; Estève , Jérôme; Aussibal , Christine; Figl , Cristina; Trebbia , Jean-Baptiste; Nguyen , Hai; Mailly , Dominique; Bouchoule , Isabelle; Westbrook , Christoph I; Aspect , Alain

2005-01-01

International audience; We present a detailed model describing the effects of wire corrugation on the trapping potential experienced by a cloud of atoms above a current carrying micro wire. We calculate the distortion of the current distribution due to corrugation and then derive the corresponding roughness in the magnetic field above the wire. Scaling laws are derived for the roughness as a function of height above a ribbon shaped wire. We also present experimental data on micro wire traps u...

Plasma influence on the dispersion properties of finite-length, corrugated waveguides

Science.gov (United States)

Shkvarunets, A.; Kobayashi, S.; Weaver, J.; Carmel, Y.; Rodgers, J.; Antonsen, T. M., Jr.; Granatstein, V. L.; Destler, W. W.; Ogura, K.; Minami, K.

1996-03-01

We present an experimental study of the electromagnetic properties of transverse magnetic modes in a corrugated-wall cavity filled with a radially inhomogeneous plasma. The shifts of the resonant frequencies of a finite-length, corrugated cavity were measured as a function of the background plasma density and the dispersion diagram was reconstructed up to a peak plasma density of 1012 cm-3. Good agreement with a calculated dispersion diagram is obtained for plasma densities below 5×1011 cm-3.

Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

Energy Technology Data Exchange (ETDEWEB)

Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

2017-05-15

Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors

International Nuclear Information System (INIS)

Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Li, Wei-Chen; Matsuda, Yasuhiro H.; Pan, Tung-Ming

2013-01-01

In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTi x O y gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTi x O y IGZO TFT device annealed at 400 °C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm 2 /V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high I on/off ratio(3.73 × 10 6 ). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTi x O y film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C. - Highlights: • ErTi x O y InGaZnO thin-film transistors (TFT). • Structural and electrical properties of the TFT were investigated. • TFT device annealed at 400 °C exhibited better electrical characteristics. • Reliability of TFT device can be improved by annealing at 400 °C

Dielectric materials for use in thin-film capacitors

Science.gov (United States)

Carr, H. E.; Foster, W. D.; Fromhold, A. T., Jr.; Harbuck, T. A.

1969-01-01

Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

Whistling of pipes with narrow corrugations: scale model tests and consequences for carcass design

NARCIS (Netherlands)

Golliard, J.; Belfroid, S.P.C.; Bendiksen, E.; Frimodt, C.

2013-01-01

Pipes for gas production and transport with a corrugated inner surface, as used in flexible pipes, can be subject to Flow-Induced Pulsations when the flow velocity is larger than a certain velocity. This onset velocity is dependent on the geometry of the corrugations, the operational conditions and

Corrugated thimble tube for controlling control rod descent in nuclear reactor

International Nuclear Information System (INIS)

Luetzow, H.J.

1981-01-01

A thimble tube construction is described which will provide a controlled descent for a control rod while minimizing the reaction forces which must be absorbed by the thimble tube and reducing the possibility that a foreign particle could interfere with the free descent of a control rod. A thimble tube is formed with helically-corrugate internal walls which cooperate with a control rod contained in the tube in an emergency situation to provide a progressively-increasing hydraulic restraining force as each adjacent corrugation is encountered

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

OpenAIRE

Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated ...

Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

Science.gov (United States)

Venkata Saravanan, K.; Raju, K. C. James

2014-03-01

The surface chemical states of RF-magnetron sputtered Ba0.5Sr0.5TiO3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O2 -, adsorbed oxide ion O- and lattice oxide ion O2-) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP ≦̸ 25%), whereas the films deposited in oxygen rich atmosphere (OMP ≧̸ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ~65% (@280 kV cm-1), with good ɛ r-E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

Science.gov (United States)

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

2008-01-15

Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

Science.gov (United States)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

Ferroelectric dielectrics integrated on silicon

CERN Document Server

Defay, Emmanuel

2013-01-01

This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

Characterizations of biodegradable epoxy-coated cellulose nanofibrils (CNF) thin film for flexible microwave applications

Science.gov (United States)

Hongyi Mi; Chien-Hao Liu; Tzu-Husan Chang; Jung-Hun Seo; Huilong Zhang; Sang June Cho; Nader Behdad; Zhenqiang Ma; Chunhua Yao; Zhiyong Cai; Shaoqin Gong

2016-01-01

Wood pulp cellulose nanofibrils (CNF) thin film is a novel recyclable and biodegradable material. We investigated the microwave dielectric properties of the epoxy coated-CNF thin film for potential broad applications in flexible high speed electronics. The characterizations of dielectric properties were carried out in a frequency range of 1–10 GHz. The dielectric...

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

Science.gov (United States)

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Effects of die profile on grain refinement in Al–Mg alloy processed by repetitive corrugation and straightening

Energy Technology Data Exchange (ETDEWEB)

Thangapandian, N., E-mail: erpandian@gmail.com [Department of Mechanical Engineering, College of Engineering Guindy, Anna University, Chennai 600025 (India); Balasivanandha Prabu, S. [Department of Mechanical Engineering, College of Engineering Guindy, Anna University, Chennai 600025 (India); Padmanabhan, K.A. [Centre for Nanotechnology, University of Hyderabad, Hyderabad 500046 (India)

2016-01-01

It is shown that a proper selection of corrugation die profile and die parameters is essential for achieving homogeneous grain refinement in materials subjected to repetitive corrugation and straightening (RCS). An Al–Mg (AA 5083) alloy was subjected to the RCS process using three different corrugation die profiles (V-groove, Flat groove, and Semi-circular groove), followed by straightening to determine the allowable maximum number of passes prior to surface cracking/fracture. Mechanical properties, i.e., hardness and tensile strength of the RCS samples were measured and compared as functions of corrugation die profiles and number of passes and the changes in microstructure. Grain refinement was studied using Electron Back Scattered Diffraction (EBSD) analysis and Transmission Electron Microscopy (TEM).

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Science.gov (United States)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

Directory of Open Access Journals (Sweden)

Li Wang

2018-05-01

Full Text Available In flexible OLEDs (FOLEDs, the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

Efficiency enhancement of flexible OLEDs by using nano-corrugated substrates and conformal Ag transparent anodes

Science.gov (United States)

Wang, Li; Luo, Yu; Feng, Xueming; Pei, Yuechen; Lu, Bingheng; Cheng, Shenggui

2018-05-01

In flexible OLEDs (FOLEDs), the traditional ITO anode has disadvantages such as refractive-index mismatches among substrate and other functional layers, leads to light loss of nearly 80%, meanwhile, its brittle nature and lack in raw materials hinder its further applications. We investigated an efficient FOLED using a semi-transparent silver (Ag) anode, whereas the device was built on a nano-corrugated flexible polycarbonate (PC) substrate prepared by thermal nanoimprint lithography. The corrugations were well preserved on each layer of the device, both the micro-cavity effect and surface plasmon polariton (SPP) modes of light loss were effectively suppressed. As a result, the current efficiency of the FOLED using a conformal corrugated Ag anode enhanced by 100% compared with a planar Ag anode device, and enhanced by 13% with conventional ITO device. In addition, owing to the quasi-periodical arrangements of the corrugations, the device achieved broad spectra and Lambertian angular emission. The Ag anode significantly improved the bending properties of the OLED as compared to the conventional ITO device, leading to a longer lifetime in practical use. The proposed manufacturing strategy will be useful for fabricating nano corrugations on plastic substrate of FOLED in a cost-effective and convenient manner.

Flow Regimes of Air-Water Counterflow Through Cross Corrugated Parallel Plates

Energy Technology Data Exchange (ETDEWEB)

de Almeida, V.F.

2000-06-07

Heretofore unknown flow regimes of air-water counterflow through a pair of transparent vertical parallel cross corrugated plates were observed via high-speed video. Air flows upward driven by pressure gradient and water, downward driven by gravity. The crimp geometry of the corrugations was drawn from typical corrugated sheets used as filling material in modern structured packed towers. Four regimes were featured, namely, rivulet, bicontinuous, flooding fronts, and flooding waves. It is conceivable that the regimes observed might constitute the basis for understanding how gas and liquid phases contend for available space in the interstices of structured packings in packed towers. Flow regime transitions were expressed in terms of liquid load (liquid superficial velocity) and gas flow factor parameters commonly used in pressure drop and capacity curves. We have carefully examined the range of parameters equivalent to the ill-understood high-liquid-flow operation in packed towers. More importantly, our findings should prove valuable in validating improved first-principles modeling of gas-liquid flows in these industrially important devices.

Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2003-07-01

Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

Wet chemical preparation of YVO{sub 4}:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

Energy Technology Data Exchange (ETDEWEB)

Klausch, A. [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany); Althues, H. [Fraunhofer Institute for Material and Beam Technology Winterbergstr. 28, 01309 Dresden (Germany); Freudenberg, T. [Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden (Germany); Kaskel, S., E-mail: Stefan.Kaskel@chemie.tu-dresden.de [Institute for Inorganic Chemistry, Dresden University of Technology, Mommsenstr. 6, 01069 Dresden (Germany)

2012-04-30

Highly transparent YVO{sub 4}:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO{sub 4}:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films. - Highlights: Black-Right-Pointing-Pointer Preparation of highly transparent Eu{sup 3+} doped YVO{sub 4} phosphor thin films. Black-Right-Pointing-Pointer Improved crystallinity and optical properties through heat treatment. Black-Right-Pointing-Pointer Red emitting films on glass substrates were combined with antimony tin oxide thin films. Black-Right-Pointing-Pointer Fully transparent, planar gas discharge lamp as prototype for a light emitting window.

Quantitative nanometer-scale mapping of dielectric tunability

Energy Technology Data Exchange (ETDEWEB)

Tselev, Alexander [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Klein, Andreas [Technische Univ. Darmstadt (Germany); Gassmann, Juergen [Technische Univ. Darmstadt (Germany); Jesse, Stephen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Li, Qian [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kalinin, Sergei V. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wisinger, Nina Balke [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2015-08-21

Two scanning probe microscopy techniques—near-field scanning microwave microscopy (SMM) and piezoresponse force microscopy (PFM)—are used to characterize and image tunability in a thin (Ba,Sr)TiO3 film with nanometer scale spatial resolution. While sMIM allows direct probing of tunability by measurement of the change in the dielectric constant, in PFM, tunability can be extracted via electrostrictive response. The near-field microwave imaging and PFM provide similar information about dielectric tunability with PFM capable to deliver quantitative information on tunability with a higher spatial resolution close to 15 nm. This is the first time that information about the dielectric tunability is available on such length scales.

Coupled-Mode Theory for Complex-Index, Corrugated Multilayer Stacks

DEFF Research Database (Denmark)

Lüder, Hannes; Gerken, Martina; Adam, Jost

, and by choosing a bi-orthogonal basis, obtained by solving the corresponding adjoint problem. With the once found modal solutions of the unperturbed waveguide, we can calculate the coupling coefficients, which describe the mode coupling caused by the introduced periodic corrugation. [1] C. Kluge et al., Opt......We present a coupled-mode theory (CMT) approach for modelling the modal behaviour of multi- layer thinfilm devices with complex material parameters and periodic corrugations. Our method provides fast computation and extended physical insight as compared to standard numerical methods...... to be non-Hermitian, introducing two major consequences. First, the eigenvalues (i. e. the mode neff) have to be found in the complex plane (Fig. 2). Second, the classical mode orthogonality is no longer valid. We address both challenges by a combination of three complex-root solving algorithms...

Application of the method of integral equations to calculating the electrodynamic characteristics of periodically corrugated waveguides

International Nuclear Information System (INIS)

Belov, V.E.; Rodygin, L.V.; Fil'chenko, S.E.; Yunakovskii, A.D.

1988-01-01

A method is described for calculating the electrodynamic characteristics of periodically corrugated waveguide systems. This method is based on representing the field as the solution of the Helmholtz vector equation in the form of a simple layer potential, transformed with the use of the Floquet conditions. Systems of compound integral equations based on a weighted vector function of the simple layer potential are derived for waveguides with azimuthally symmetric and helical corrugations. A numerical realization of the Fourier method is cited for seeking the dispersion relation of azimuthally symmetric waves of a circular corrugated waveguide

Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

Science.gov (United States)

Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

2014-04-01

The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

Graphene-assisted near-field radiative heat transfer between corrugated polar materials

International Nuclear Information System (INIS)

Liu, X. L.; Zhang, Z. M.

2014-01-01

Graphene has attracted great attention in nanoelectronics, optics, and energy harvesting. Here, the near-field radiative heat transfer between graphene-covered corrugated silica is investigated based on the exact scattering theory. It is found that graphene can improve the radiative heat flux between silica gratings by more than one order of magnitude and alleviate the performance sensitivity to lateral shift. The underlying mechanism is mainly attributed to the improved photon tunneling of modes away from phonon resonances. Besides, coating with graphene leads to nonlocal radiative transfer that breaks Derjaguin's proximity approximation and enables corrugated silica to outperform bulk silica in near-field radiation.

Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

International Nuclear Information System (INIS)

Venkata Saravanan, K; James Raju, K C

2014-01-01

The surface chemical states of RF-magnetron sputtered Ba 0.5 Sr 0.5 TiO 3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O 2 − , adsorbed oxide ion O − and lattice oxide ion O 2− ) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP not ≦ 25%), whereas the films deposited in oxygen rich atmosphere (OMP not ≧ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O 2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ∼65% (@280 kV cm −1 ), with good ϵ r -E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications. (papers)

An Experimental Study on the Shear Hysteresis and Energy Dissipation of the Steel Frame with a Trapezoidal-Corrugated Steel Plate.

Science.gov (United States)

Shon, Sudeok; Yoo, Mina; Lee, Seungjae

2017-03-06

The steel frame reinforced with steel shear wall is a lateral load resisting system and has higher strength and shear performance than the concrete shear wall system. Especially, using corrugated steel plates in these shear wall systems improves out-of-plane stiffness and flexibility in the deformation along the corrugation. In this paper, a cyclic loading test of this steel frame reinforced with trapezoidal-corrugated steel plate was performed to evaluate the structural performance. The hysteresis behavior and the energy dissipation capacity of the steel frame were also compared according to the corrugated direction of the plate. For the test, one simple frame model without the wall and two frame models reinforced with the plate are considered and designed. The test results showed that the model reinforced with the corrugated steel plate had a greater accumulated energy dissipation capacity than the experimental result of the non-reinforced model. Furthermore, the energy dissipation curves of two reinforced frame models, which have different corrugated directions, produced similar results.

Flexural strengthening of Reinforced Concrete (RC) Beams Retrofitted with Corrugated Glass Fiber Reinforced Polymer (GFRP) Laminates

Science.gov (United States)

Aravind, N.; Samanta, Amiya K.; Roy, Dilip Kr. Singha; Thanikal, Joseph V.

2015-01-01

Strengthening the structural members of old buildings using advanced materials is a contemporary research in the field of repairs and rehabilitation. Many researchers used plain Glass Fiber Reinforced Polymer (GFRP) sheets for strengthening Reinforced Concrete (RC) beams. In this research work, rectangular corrugated GFRP laminates were used for strengthening RC beams to achieve higher flexural strength and load carrying capacity. Type and dimensions of corrugated profile were selected based on preliminary study using ANSYS software. A total of twenty one beams were tested to study the load carrying capacity of control specimens and beams strengthened with plain sheets and corrugated laminates using epoxy resin. This paper presents the experimental and theoretical study on flexural strengthening of Reinforced Concrete (RC) beams using corrugated GFRP laminates and the results are compared. Mathematical models were developed based on the experimental data and then the models were validated.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

International Nuclear Information System (INIS)

Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

2010-01-01

Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

Directory of Open Access Journals (Sweden)

Chao-Te Liu

2012-01-01

Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

Research on a 170 GHz, 2 MW coaxial cavity gyrotron with inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Hou, Shenyong, E-mail: houshenyong@sohu.com [Yangtze Normal University, Chongqing, 408001 (China); Yu, Sheng; Li, Hongfu [University of Electronics Science and Technology of China, Chengdu 610054 (China)

2015-03-15

In this paper, a coaxial cavity gyrotron with inner-outer corrugation is researched. The electron kineto-equations and the first order transmission line equations of the gyrotron are derived from Lorentz force equation and the transmission line theory, respectively. And then, a 2 MW, 170 GHz coaxial cavity gyrotron with inner-outer corrugation is designed. By means of numerical calculation, the beam-wave interaction of the coaxial cavity gyrotron with inner-outer corrugation is investigated. Results show that the efficient and the outpower of the gyrotron are 42.3% and 2.38 MW, respectively.

Beam Expansion of Blind Spot Detection Radar Antennas Using a Radome with Defected Corrugated Inner Wall

Directory of Open Access Journals (Sweden)

Hayeon Kim

2017-01-01

Full Text Available A beam expanding radome for 76.5 GHz automotive radar antennas is presented whose inner surface is engraved with corrugations. The radar used for blind spot detection (BSD requires a very wide beam width to ensure longer time for tracking out-of-sight objects. It is found that the corrugations modulate the phase velocities of the waves along the surface, which increases beam width in the far field. In addition, defects in the corrugation increase beam width even further. The presented structure satisfies the beam width requirement while keeping a low profile.

Squeezed-light generation in a nonlinear planar waveguide with a periodic corrugation

International Nuclear Information System (INIS)

Perina, Jan Jr.; Haderka, Ondrej; Sibilia, Concita; Bertolotti, Mario; Scalora, Michael

2007-01-01

Two-mode nonlinear interaction (second-harmonic and second-subharmonic generation) in a planar waveguide with a small periodic corrugation at the surface is studied. Scattering of the interacting fields on the corrugation leads to constructive interference that enhances the nonlinear process provided that all the interactions are phase matched. Conditions for the overall phase matching are found. Compared with a perfectly quasi-phase-matched waveguide, better values of squeezing as well as higher intensities are reached under these conditions. Procedure for finding optimum values of parameters for squeezed-light generation is described

Enhanced heat transfer with corrugated flow channel in anode side of direct methanol fuel cells

International Nuclear Information System (INIS)

Heidary, H.; Abbassi, A.; Kermani, M.J.

2013-01-01

Highlights: • Effect of corrugated flow channel on the heat exchange of DMFC is studied. • Corrugated boundary (except rectangular type) increase heat transfer up to 90%. • Average heat transfer in rectangular-corrugated boundary is less than straight one. • In Re > 60, wavy shape boundary has highest heat transfer. • In Re < 60, triangular shape boundary has highest heat transfer. - Abstract: In this paper, heat transfer and flow field analysis in anode side of direct methanol fuel cells (DMFCs) is numerically studied. To enhance the heat exchange between bottom cold wall and core flow, bottom wall of fluid delivery channel is considered as corrugated boundary instead of straight (flat) one. Four different shapes of corrugated boundary are recommended here: rectangular shape, trapezoidal shape, triangular shape and wavy (sinusoidal) shape. The top wall of the channel (catalyst layer boundary) is taken as hot boundary, because reaction occurs in catalyst layer and the bottom wall of the channel is considered as cold boundary due to coolant existence. The governing equations are numerically solved in the domain by the control volume approach based on the SIMPLE technique (1972). A wide spectrum of numerical studies is performed over a range of various shape boundaries, Reynolds number, triangle block number, and the triangle block amplitude. The performed parametric studies show that corrugated channel with trapezoidal, triangular and wavy shape enhances the heat exchange up to 90%. With these boundaries, cooling purpose of reacting flow in anode side of DMFCs would be better than straight one. Also, from the analogy between the heat and mass transfer problems, it is expected that the consumption of reacting species within the catalyst layer of DMFCs enhance. The present work provides helpful guidelines to the bipolar plate manufacturers of DMFCs to considerably enhance heat transfer and performance of the anode side of DMFC

Exergy Based Performance Analysis of Double Flow Solar Air Heater with Corrugated Absorber

OpenAIRE

S. P. Sharma; Som Nath Saha

2017-01-01

This paper presents the performance, based on exergy analysis of double flow solar air heaters with corrugated and flat plate absorber. A mathematical model of double flow solar air heater based on energy balance equations has been presented and the results obtained have been compared with that of a conventional flat-plate solar air heater. The double flow corrugated absorber solar air heater performs thermally better than the flat plate double flow and conventional flat-plate solar air heate...

Hydraulic and thermal behaviour of a corrugated plane canal. Application to plate-based heat exchangers

International Nuclear Information System (INIS)

Amblard, Alain

1986-01-01

As corrugations are often used in heat exchangers in order to promote heat exchange mechanisms through a reduction of boundary layer thickness, an increase of turbulence within the boundary layer, and an increase of exchange surface, the objectives of this research thesis are, on the one hand, to determine the influence of corrugation geometry on heat exchange and friction laws, and, on the other hand, to develop a computing software to describe the flow and heat exchange in the elementary canal. This study is limited to the case of single-phase forced convection in water. After a bibliographical overview on the hydraulic and thermal behaviour of corrugated surfaces used in heat exchangers, the author presents the different studied geometries, and the experimental installation used to determine the friction and exchange coefficient in a vertical duct formed by two corrugated plates. Experimental results are presented and compared with respect to the shape of exchange surfaces. The author then reports the use of two-dimensional code used to describe the flow in an exchanger duct [fr

High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

Science.gov (United States)

Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

2015-08-01

1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

Dielectric spectroscopy studies of low-disorder and low-dimensional materials

OpenAIRE

Tripathi, Pragya

2016-01-01

In this thesis we employ dielectric spectroscopy (in different implementations) to study the dielectric properties of different materials ranging from completely disordered supercooled liquids to low-disorder solids with only ratcheting reorientational motions, to low-dimensional systems such as thin films or needle-like crystals. The probed material properties include the electrical conductivity, the space-charge processes due to sample heterogeneities, molecular dynamics, hydrogen-bond dyna...

Numerical Investigation of Corrugated Wire Mesh Laminate

Directory of Open Access Journals (Sweden)

Jeongho Choi

2013-01-01

Full Text Available The aim of this work is to develop a numerical model of Corrugated Wire Mesh Laminate (CWML capturing all its complexities such as nonlinear material properties, nonlinear geometry and large deformation behaviour, and frictional behaviour. Development of such a model will facilitate numerical simulation of the mechanical behaviour of the wire mesh structure under various types of loading as well as the variation of the CWML configuration parameters to tailor its mechanical properties to suit the intended application. Starting with a single strand truss model consisting of four waves with a bilinear stress-strain model to represent the plastic behaviour of stainless steel, the finite element model is gradually built up to study single-layer structures with 18 strands of corrugated wire meshes consistency and double- and quadruple-layered laminates with alternating crossply orientations. The compressive behaviour of the CWML model is simulated using contact elements to model friction and is compared to the load-deflection behaviour determined experimentally in uniaxial compression tests. The numerical model of the CWML is then employed to conduct the aim of establishing the upper and lower bounds of stiffness and load capacity achievable by such structures.

(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

Science.gov (United States)

Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

1994-03-01

(Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

Energy Technology Data Exchange (ETDEWEB)

Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

2015-12-31

Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

Electron-beam-induced conduction in dielectrics

Energy Technology Data Exchange (ETDEWEB)

Acris, F C; Davies, P M; Lewis, T J [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

1976-03-14

A model for the enhanced conduction induced in dielectric films under electron bombardment while electrically stressed is discussed. It is assumed that the beam produces a virtual electrode at the end of its range in the dielectric and, as a consequence, the induced conduction is shown to depend on the properties of that part of the dielectric beyond the range of the beam. This model has also been discussed recently by Nunes de Oliviera and Gross. In the present treatment, it is shown how the model permits investigation of beam scattering and carrier generation and recombination processes. Experiments on electron-bombardment-induced conduction of thin (72 to 360 nm) films of anodic tantalum oxide are reported and it is shown that the theoretical model provides a very satisfactory explanation of all features of the results including the apparent threshold energy for enhanced conduction.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-05-17

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Directory of Open Access Journals (Sweden)

Huaping Wu

2016-01-01

Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

International Nuclear Information System (INIS)

Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

2015-01-01

This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high–κ YbTi x O y gate dielectrics for indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTi x O y IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm 2 V −1 s −1 , a high I on /I off ratio of 2.8 × 10 7 , and a low subthreshold swing of 176 mV dec. −1 , relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTi x O y dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTi x O y IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions. (paper)

Properties of electropolymerised polypyrrole thin film on silver

Science.gov (United States)

Jamadade, Shivaji A.; Puri, Vijaya

2009-07-01

This paper reports the properties of electropolymerised polypyrrole thin film on silver. The transmission, reflection, conductivity and dielectric behavior of polypyrrole coated silver has been studied in the 8-12 GHz frequency range of the electromagnetic spectrum. The polypyrrole thin film makes silver a better conductor for microwaves. The microwave conductivity is larger than the DC conductivity by many orders of magnitude. The real and imaginary part of dielectric constant increases in magnitude with increasing doping level and also it decreases in magnitude with increasing frequency.

Center for dielectric studies

Science.gov (United States)

Cross, L. E.; Newnham, R. E.; Biggers, J. V.

1984-05-01

This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

Optical properties of WO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay; Tomar, Monika

2014-01-01

Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO 3 thin films. WO 3 thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO 3 thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO 3 thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO 3 /Au/prism structure were utilized to estimate the dielectric properties of WO 3 thin films at optical frequency (λ = 633 nm). As the thickness of WO 3 thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO 3 film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light

Multi-objective shape optimization of double pipe heat exchanger with inner corrugated tube using RSM method

International Nuclear Information System (INIS)

Han, Huai-Zhi; Li, Bing-Xi; Wu, Hao; Shao, Wei

2015-01-01

Integrated a fully developing three-dimensional heat transfer and flow model, a multi-objective optimization aims to fulfill the geometric design for double-tube heat exchangers with inner corrugated tube is investigated in this work with RSM. Dimensionless corrugation pitch (p/D), dimensionless corrugation height (H/D), dimensionless corrugation radius (r/D) and Reynolds number (Re) are considered as four design parameters. Considering the process parameters, the characteristic numbers involving heat transfer characteristic, resistance characteristic and overall heat transfer performance calculated by CFD, and are served as objective functions to the RSM (Nu c , f c , Nu c /Nu s , f c /f s and h in this paper). The results of optimal designs are a set of multiple optimum solutions, called 'Pareto optimal solutions'. It reveals the identical tendency of Nu c /Nu s and f c /f s reflecting the conflict between them that means augmenting the heat transfer performance with various design parameters in the optimal situation inevitably sacrificed the increase of flow resistance. According to the Pareto optimal curves, the optimum designing parameters of double pipe heat exchanger with inner corrugated tube under the constrains of Nu c /Nu s ≥1.2 are found to be P/D = 0.82, H/D = 0.22, r/D = 0.23, Re = 26,263, corresponding to the maximum value of η = 1.12. (authors)

Effects of Bi doping on dielectric and ferroelectric properties

Indian Academy of Sciences (India)

[Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

Determination of transfer parameters in corrugated plates exchangers

International Nuclear Information System (INIS)

Silva Lima Filho, S. da.

1984-01-01

In this work is presented a experimental study about the forced convenction problem in vee-corrugated exchangers, with flow in the transversal sense, and parallel plates exchangers in which the isotermal plate is equivalent to the absobing one and the other plate is adiabatic. Global values of the transfer coefficients were experimentally obtained by application of the Naphthalene Sublimation Technique in accordance with the analogy between heat and mass transfer. The results were expressed in terms of Sh sup(-) /Sc sup(0,4) that according to the analogy is equal the Nu sup(-) / Pr sup(0,4) in function of the Reynolds number. The ratio between the lenght of the channel and the average spacing between plates L/2a was ranged in all the exchangers. Parameters of transfer to angles of 45 0 and 31 0 were determined in the corrugated plates exchangers. The experimental results obtained were analyzed and compared among them. Finally practical applications of these results are presented to heat exchangers with similars geometric characteristics. (Author) [pt

The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

Science.gov (United States)

2016-02-01

BST film capacitor devices were fabricated using physical and chemical solution deposition techniques. The typical dielectric constant of the...electrode loss, and the parallel resistor- capacitor circuit represents the capacitance and the dielectric loss, assuming lead inductance is...Thin barium strontium titanate (BST) films are being developed as dielectric film for use in tunable radio frequency (RF)/microwave applications. Thin

Modeling and experimental study of a corrugated wick type solar still: Comparative study with a simple basin type

International Nuclear Information System (INIS)

Matrawy, K.K.; Alosaimy, A.S.; Mahrous, A.-F.

2015-01-01

Highlights: • Performance of corrugated wick type solar still is compared with simple type. • Corrugated porous surface contributes by about 75% of the total productivity. • Productivity of corrugated solar still was 34% more than that for simple type. - Abstract: In the present work, the productivity of a solar still is modified by forming the evaporative surface as a corrugated shape as well as by decreasing the heat capacity with the use of a porous material. This target has been achieved by using black clothes in a corrugated shape that are immersed in water where the clothes absorbs water and get saturated by capillary effect. Along with the proposed corrugated wick type solar still, a simple basin still type was fabricated and tested to compare the enhancement accomplished by the developed solar still. Inclined reflectors were used to augment the solar radiation incident on the plane of the developed solar stills. The energy balance in the developed mathematical models takes into consideration the glass covers, the porous material, along with the portion of water exposed to the transmitted solar radiation as well as the portion of water shaded by the corrugated surface. The developed mathematical model was validated by fabricating and testing two models for the proposed and simple basin solar stills under the same conditions. Good agreement between the simulated and experimental results has been detected. It has been found that an improvement of about 34% in the productivity for the proposed wick type solar still is gained as compared to the simple basin case. Also, the best tilt angle for the inclined reflector has been found to be about 30° with respect to the vertical direction of the setup under consideration.

Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

Directory of Open Access Journals (Sweden)

Yaorong Su

2015-11-01

Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

Comparison of heat transfer in straight and corrugated minichannels with two-phase flow

Directory of Open Access Journals (Sweden)

Peukert P.

2014-03-01

Full Text Available Measurements of heat transfer rates performed with an experimental condensation heat exchanger are reported for a corrugated minichannel tube and for a straight minichannel tube. The two cases were compared at same flow regimes. The corrugation appears advantageous for relatively low steam pressures and flow rates where much higher heat transfer rates were observed close to the steam entrance, thus allowing shortening the heat exchanger with the associated advantages of costs lowering and smaller built-up space. At high steam pressures and high flow rates both tubes performed similarly.

Experimental study on the heat transfer characteristics in corrugated and flat plate type heat exchanger

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Hun; Jeong, Yong Ki; Jeon, Chung Hwan; Chang, Young June [Busan National Univ., Busan (Korea, Republic of); Lim, Hyeok [DHT, Busan (Korea, Republic of)

2003-07-01

An experiment was performed to study heat transfer characteristics between corrugated heat exchanger and flat plate type one. While heat capacity(13.86kW) was provided constantly and the flow speed was varied from 2.8 to 17.9m/s, the temperature and the pressure drop were measured. Furthermore, heat transfer coefficient, Colburn factor and Nusselt number were calculated using them. With increase of the flow speed for both exchangers, the coefficient and the pressure drop increased, but Colburn factor decreased. The coefficient, pressure drop and Colburn factor of the corrugated type were all higher than those of the flat one, which is due to the flow interruption with recirculation and reattachment of the corrugated type. The empirical correlations of Nusselt number were suggested for the tested two heat exchangers.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

Science.gov (United States)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Optical properties of WO{sub 3} thin films using surface plasmon resonance technique

Energy Technology Data Exchange (ETDEWEB)

Paliwal, Ayushi; Sharma, Anjali; Gupta, Vinay, E-mail: drguptavinay@gmail.com, E-mail: vgupta@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India)

2014-01-28

Indigenously assembled surface plasmon resonance (SPR) technique has been exploited to study the thickness dependent dielectric properties of WO{sub 3} thin films. WO{sub 3} thin films (80 nm to 200 nm) have been deposited onto gold (Au) coated glass prism by sputtering technique. The structural, optical properties and surface morphology of the deposited WO{sub 3} thin films were studied using X-ray diffraction, UV-visible spectrophotometer, Raman spectroscopy, and Scanning electron microscopy (SEM). XRD analysis shows that all the deposited WO{sub 3} thin films are exhibiting preferred (020) orientation and Raman data indicates that the films possess single phase monoclinic structure. SEM images reveal the variation in grain size with increase in thickness. The SPR reflectance curves of the WO{sub 3}/Au/prism structure were utilized to estimate the dielectric properties of WO{sub 3} thin films at optical frequency (λ = 633 nm). As the thickness of WO{sub 3} thin film increases from 80 nm to 200 nm, the dielectric constant is seen to be decreasing from 5.76 to 3.42, while the dielectric loss reduces from 0.098 to 0.01. The estimated value of refractive index of WO{sub 3} film is in agreement to that obtained from UV-visible spectroscopy studies. The strong dispersion in refractive index is observed with wavelength of incident laser light.

Impact of substrate corrugation on the sliding friction levels of adsorbed films.

Science.gov (United States)

Coffey, T; Krim, J

2005-08-12

We report a quartz crystal microbalance (QCM) study of sliding friction for solid xenon monolayers at 77 K on Cu(111), Ni(111), graphene/Ni(111), and C(60) substrates. Simulations have predicted a strong dependence of phononic friction coefficient (eta) on surface corrugation in systems with similar lattice spacing, eta approximately U(2)(0), but this has never before been shown experimentally. In order to make direct comparisons with theory, substrates with similar lattice spacing but varying amplitudes of surface corrugation were studied. QCM data reveal friction levels proportional to U(2)(0), validating current theoretical and numerical predictions. Measurements of Xe/C(60) are also included for comparison purposes.

Functional silicone copolymers and elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

2016-01-15

The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Evaluation of Thermo-Fluid Performance of Compact Heat Exchanger with Corrugated Wall Channels

International Nuclear Information System (INIS)

Tak, Nam Il; Lee, Won Jae

2006-01-01

One of the key components of an indirect nuclear hydrogen production system is an intermediate heat exchanger (IHX). For the IHX, a printed circuit heat exchanger (PCHE) is known as one of the promising types due to its compactness and ability to operate at high temperatures and under high pressures. The PCHE is a relatively new heat exchanger. It has been commercially manufactured only since 1985 and solely by one British vendor, HeatricTM. Due to its short history and limited production, sufficient information about the PCHE is not available for the design of the IHX in open literatures. The predominant shape of flow channels of the PCHE is laterally corrugated. The flow in a corrugated wall channel is very interesting since a variety of flow phenomena can be considered by changing the amplitude-to-wavelength ratio. In the present paper, thermo-fluid performance of a heat exchanger with a typical PCHE geometry has been evaluated. Computational fluid dynamics (CFD) analysis was performed to analyze a gas flow behavior in a corrugated wall channel

Compact Elliptically Tapered Slot Antenna with Non-uniform Corrugations for Ultra-wideband Applications

Directory of Open Access Journals (Sweden)

F. G. Zhu

2013-04-01

Full Text Available A small size elliptically tapered slot antenna (ETSA fed by coplanar waveguide (CPW for ultra-wideband (UWB applications is proposed. It is printed on an FR4 substrate and occupies a size of 37×34×0.8 mm^3. A pair of quarter circular shapes is etched on the radiator to reduce the size. To overcome the limitation of uniform corrugation, non-uniform corrugation is utilized to reduce the cross-polarization level. A parametric study is carried out to investigate the effects of circular cut and corrugations. In order to validate the design, a prototype is fabricated and measured. Both simulated and measured results confirm that the proposed antenna achieves a good performance of a reflection coefficient below -10 dB from 3.1 GHz to 10.6 GHz, including a maximum antenna gain of 8.1dBi, directional patterns in the end-fire direction, low cross-polarization level below -20 dB and linear phase response. The antenna is promising for applications in UWB impulse radar imaging.

Solid thin film materials for use in thin film charge-coupled devices

International Nuclear Information System (INIS)

Lynch, S.J.

1983-01-01

Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

Electrical response of relaxing dielectrics compressed by arbitrary stress pulses

International Nuclear Information System (INIS)

Lysne, P.C.

1983-01-01

The theoretical problem of the electric response of biased dielectrics and piezoelectrics subjected to planar stress pulse loading is considered. The materials are taken to exhibit dielectric relaxation in the sense that changes in the polarization induced by electric fields do not occur instantaneously with changes in the fields. While this paper considers arbitrary stress pulse loading of the specimen, examples that are amenable to projectile impact techniques are considered in detail. They are shock reverberation, thin pulse, and ramp loading experiments. It is anticipated that these experiments will play a role in investigations of dielectric relaxation caused by shock induced damage in insulators

A magnetically tunable non-Bragg defect mode in a corrugated waveguide filled with liquid crystals

Science.gov (United States)

Zhang, Lu; Fan, Ya-Xian; Liu, Huan; Han, Xu; Lu, Wen-Qiang; Tao, Zhi-Yong

2018-04-01

A magnetically tunable, non-Bragg defect mode (NBDM) was created in the terahertz frequency range by inserting a defect in the middle of a periodically corrugated waveguide filled with liquid crystals (LCs). In the periodic waveguide, non-Bragg gaps beyond the Bragg ones, which appear in the transmission spectra, are created by different transverse mode resonances. The transmission spectra of the waveguide containing a defect showed that a defect mode was present inside the non-Bragg gap. The NBDM has quite different features compared to the Bragg defect mode, which includes more complex, high-order guided wave modes. In our study, we filled the corrugated waveguide with LCs to realize the tunability of the NBDM. The simulated results showed that the NBDM in a corrugated waveguide filled with LCs can be used in filters, sensors, switches, and other terahertz integrated devices.

Dielectric functions and energy band gap variation studies of manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films using spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Gautam, Prikshit, E-mail: pgautam.phy.du@gmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Department of Physics Kirori Mal College, University of Delhi, Delhi 110007 (India); Sachdeva, Anupama [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P., E-mail: ram_tandon@hotmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India)

2014-12-25

Highlights: • Mn Doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. • The optical properties of BLT and Mn modified BLT thin films were investigated by using spectroscopic ellipsometry. • A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions. • The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content. - Abstract: Single phase polycrystalline Mn-modified Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were prepared by chemical solution deposition method using spin coating technique on Pt/Ti/SiO{sub 2}/Si (1 0 0) substrates. Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. The optical properties of BLT and Mn modified BLT thin films were investigated at room temperature by using spectroscopic ellipsometry (SE) in the energy range 0.72–6.2 eV. A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions of these films where a shift to the lower energy side with Mn doping is seen. The full width at half maxima (FWHM) (Γ) of dielectric function is found to increase with Mn doping. This increase in FWHM may be attributed to the increase in the trap density in forbidden band which consequently decreases the value of direct optical band gap (Eg{sup d}). The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content in the studied composition range. This decrease in Eg{sup d} with doping may be attributed to the variation in the defect concentration present in the structure.

Variable stiffness corrugated composite structure with shape memory polymer for morphing skin applications

Science.gov (United States)

Gong, Xiaobo; Liu, Liwu; Scarpa, Fabrizio; Leng, Jinsong; Liu, Yanju

2017-03-01

This work presents a variable stiffness corrugated structure based on a shape memory polymer (SMP) composite with corrugated laminates as reinforcement that shows smooth aerodynamic surface, extreme mechanical anisotropy and variable stiffness for potential morphing skin applications. The smart composite corrugated structure shows a low in-plane stiffness to minimize the actuation energy, but also possess high out-of-plane stiffness to transfer the aerodynamic pressure load. The skin provides an external smooth aerodynamic surface because of the one-sided filling with the SMP. Due to variable stiffness of the shape memory polymer the morphing skin exhibits a variable stiffness with a change of temperature, which can help the skin adjust its stiffness according different service environments and also lock the temporary shape without external force. Analytical models related to the transverse and bending stiffness are derived and validated using finite element techniques. The stiffness of the morphing skin is further investigated by performing a parametric analysis against the geometry of the corrugation and various sets of SMP fillers. The theoretical and numerical models show a good agreement and demonstrate the potential of this morphing skin concept for morphing aircraft applications. We also perform a feasibility study of the use of this morphing skin in a variable camber morphing wing baseline. The results show that the morphing skin concept exhibits sufficient bending stiffness to withstand the aerodynamic load at low speed (less than 0.3 Ma), while demonstrating a large transverse stiffness variation (up to 191 times) that helps to create a maximum mechanical efficiency of the structure under varying external conditions.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Dielectric spectroscopy of [P(NID2OD-T2)]n thin films: Effects of UV radiation on charge transport

International Nuclear Information System (INIS)

Sepulveda, Pablo I.; Rosado, Alexander O.; Pinto, Nicholas J.

2014-01-01

Poly[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyll-alt-5,5′-(2,2′-bithiophene)]-[P(ND12OD-T2)] n is a n-doped polymer that is stable in air. Low frequency (40 Hz–30 kHz) dielectric spectroscopy shows that the polymer impedance strength is reduced under ultra-violet (UV) radiation as a result of charge increase in the bulk polymer. Photo-excitation and the creation of electron-hole pairs and subsequent hole recombination with electron trapping species adsorbed by the polymer are suggested as possible doping mechanisms. The relaxation times were also faster in the presence of UV indicating multiple pathways for oscillating dipoles to relax. These results imply increased polymer conductance with corresponding enhancement of charge mobility due to reduced scattering in the presence of UV radiation. A thin film field effect transistor was fabricated using this polymer as the active material and characterized in the presence of UV radiation. As expected, the device exhibited n-type behavior with a charge mobility of 3.0 × 10 −3 cm 2 /V-s. Exposure to UV radiation increased the channel current, shifted the threshold voltage to more negative values and doubled the value of the mobility. These results are consistent with dielectric measurements and suggest an easy method of increasing device currents and charge mobility in this polymer via UV irradiation. - Highlights: • Ultra-violet (UV) radiation dopes the polymer. • The doping is n-type. • UV radiation enhances charge mobility without post polymer processing. • Dielectric spectroscopy and field effect transistor results are self-consistent

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Science.gov (United States)

Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

Numerical simulations for quantitative analysis of electrostatic interaction between atomic force microscopy probe and an embedded electrode within a thin dielectric: meshing optimization, sensitivity to potential distribution and impact of cantilever contribution

Science.gov (United States)

Azib, M.; Baudoin, F.; Binaud, N.; Villeneuve-Faure, C.; Bugarin, F.; Segonds, S.; Teyssedre, G.

2018-04-01

Recent experimental results demonstrated that an electrostatic force distance curve (EFDC) can be used for space charge probing in thin dielectric layers. A main advantage of the method is claimed to be its sensitivity to charge localization, which, however, needs to be substantiated by numerical simulations. In this paper, we have developed a model which permits us to compute an EFDC accurately by using the most sophisticated and accurate geometry for the atomic force microscopy probe. To avoid simplifications and in order to reproduce experimental conditions, the EFDC has been simulated for a system constituted of a polarized electrode embedded in a thin dielectric layer (SiN x ). The individual contributions of forces on the tip and on the cantilever have been analyzed separately to account for possible artefacts. The EFDC sensitivity to potential distribution is studied through the change in electrode shape, namely the width and the depth. Finally, the numerical results have been compared with experimental data.

Plasma nitridation optimization for sub-15 A gate dielectrics

NARCIS (Netherlands)

Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

Science.gov (United States)

Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

2010-11-01

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Numerical study on the flow and heat transfer characteristics of slush nitrogen in a corrugated pipe

Science.gov (United States)

Li, Y. J.; Wu, S. Q.; Jin, T.

2017-12-01

Slush nitrogen has lower temperature, higher density and higher heat capacity than that of liquid nitrogen at normal boiling point. It is considered to be a potential coolant for high-temperature superconductive cables (HTS) that would decrease nitrogen consumption and storage cost. The corrugated pipe can help with the enhancement of heat transfer and flexibility of the coolants for HTS cables. In this paper, a 3-D Euler-Euler two-fluid model has been developed to study the flow and heat transfer characteristics of slush nitrogen in a horizontal helically corrugated pipe. By comparing with the empirical formula for pressure drop, the numerical model is confirmed to be effective for the prediction of slush nitrogen flow in corrugated pipes. The flow and heat transfer characteristics of slush nitrogen in a horizontal pipe at various working conditions (inlet solid fraction of 0-20%, inlet velocity of 0-3 m/s, heat flux of 0-12 kW/m2) have been analyzed. The friction factor of slush nitrogen is lower than that of subcooled liquid nitrogen when the slush Reynolds number is higher than 4.2×104. Moreover, the heat transfer coefficient of slush nitrogen flow in the corrugated pipe is higher than that of subcooled liquid nitrogen at velocities which is higher than that 1.76 m/s, 0.91 m/s and 0.55 m/s for slush nitrogen with solid fraction of 5%, 10% and 20%, respectively. The slush nitrogen has been confirmed to have better heat transfer performance and lower pressure drop instead of using liquid nitrogen flowing through a helically corrugated pipe.

Effective dielectric functions of samples obtained by evaporation of alkali halides

International Nuclear Information System (INIS)

Sturm, J.; Grosse, P.; Theiss, W.

1991-01-01

This paper investigates the dielectric properties of inhomogeneous samples consisting of small alkali halide particles (NaCl, KBr) on gold-coated substrates. Our reflection measurements in the far infrared can be simulated as a thin layer of the power with an effective dielectric function on a perfectly reflecting substrate. Scanning electron micrographs provide useful information about sample topology. Several mixing formulas (e.g. the Maxwell-Garnett, the Bruggeman- and the Looyenga-formula) lead to effective dielectric functions neglecting the individual arrangement of the particles. The essence of our work is that, in contrast, the general ansatz of the Bergman spectral representation has to be employed in order to take into account topology effects on the dielectric function based on the so-called spectral density g adjustable to the specific situation. (orig.)

Stress effects in ferroelectric perovskite thin-films

Science.gov (United States)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

Dielectric response of capacitor structures based on PZT annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

2016-12-09

Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

CERN Document Server

Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

2000-01-01

Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

Science.gov (United States)

Lin, Yow-Jon; Hung, Cheng-Chun

2018-02-01

The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

Optical constants and structural properties of thin gold films

DEFF Research Database (Denmark)

Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

2017-01-01

We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

Effects of Polymeric Dielectric Morphology on Pentacene Morphology and Organic TFT Characteristics

Directory of Open Access Journals (Sweden)

Ye Rongbin

2016-01-01

Full Text Available In this paper, we report on the effects of the polymeric dielectric morphology on pentacene morphology and organic thin film transistor (TFT characteristics. The morphology and thickness of cyclo-olefin polymer (COP dielectric could be controlled by selecting a solvent. Higher the solvent’s boiling point is, thinner and smother COP films could be obtained. Using the solvent of trimethylcyclohexane, the spin-coated COP films of ca. 330 nm with the peak-to-valley of 7.35 nm and the roughness of root mean square of 0.58 nm were obtained, and pentacene TFT showed high mobility of 2.0 cm2V-1s-1, which originated from highly ordering of pentacene thin films deposited on the smoother and thinner COP films.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

Science.gov (United States)

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

Directory of Open Access Journals (Sweden)

Liu X.

2015-04-01

Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

Electrical characteristics of top contact pentacene organic thin film

Indian Academy of Sciences (India)

Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics, namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO2 as dielectric and gold deposited on the rough side of highly doped silicon (n+ -Si) ...

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

Science.gov (United States)

Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2015-11-14

Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

Effects of crystallization on structural and dielectric properties of thin amorphous films of (1 - x)BaTiO3-xSrTiO3 (x=0-0.5, 1.0)

Science.gov (United States)

Kawano, H.; Morii, K.; Nakayama, Y.

1993-05-01

The possibilities for fabricating solid solutions of (Ba1-x,Srx)TiO3 (x≤0.5,1.0) by crystallization of amorphous films and for improving their dielectric properties by adjusting the Sr content were investigated. Thin amorphous films were prepared from powder targets consisting of mixtures of BaTiO3 and SrTiO3 by sputtering with a neutralized Ar-ion beam. The amorphous films crystallized into (Ba1-x, Srx)TiO3 solid solutions with a cubic perovskite-type structure after annealing in air at 923 K for more than 1 h. The Debye-type dielectric relaxation was observed for the amorphous films, whereas the crystallized films showed paraelectric behavior. The relative dielectric constants were of the order of 20 for the amorphous samples, but increased greatly after crystallization to about 60-200, depending on the composition; a larger increase in the dielectric constant was observed in the higher Sr content films, in the range x≤0.5, which could be correlated with an increase in the grain size of the crystallites. The crystallization processes responsible for the difference in the grain size are discussed based on the microstructural observations.

Aeroacoustics of the swinging corrugated tube : voice of the dragon

NARCIS (Netherlands)

Nakiboglu, G.; Rudenko, O.; Hirschberg, A.

2012-01-01

When one swings a short corrugated pipe segment around one’s head, it produces a musically interesting whistling sound. As a musical toy it is called a "Hummer" and as a musical instrument, the "Voice of the Dragon." The fluid dynamics aspects of the instrument are addressed, corresponding to the

Measuring the height-to-height correlation function of corrugation in suspended graphene

International Nuclear Information System (INIS)

Kirilenko, D.A.; Brunkov, P.N.

2016-01-01

Nanocorrugation of 2D crystals is an important phenomenon since it affects their electronic and mechanical properties. The corrugation may have various sources; one of them is flexural phonons that, in particular, are responsible for the thermal conductivity of graphene. A study of corrugation of just the suspended graphene can reveal much of valuable information on the physics of this complicated phenomenon. At the same time, the suspended crystal nanorelief can hardly be measured directly because of high flexibility of the 2D crystal. Moreover, the relief portion related to rapid out-of-plane oscillations (flexural phonons) is also inaccessible by such measurements. Here we present a technique for measuring the Fourier components of the height–height correlation function H(q) of suspended graphene which includes the effect of flexural phonons. The technique is based on the analysis of electron diffraction patterns. The H(q) is measured in the range of wavevectors q≈0.4–4.5 nm"−"1. At the upper limit of this range H(q) does follow the T/κq"4 law. So, we measured the value of suspended graphene bending rigidity κ=1.2±0.4 eV at ambient temperature T≈300 K. At intermediate wave vectors, H(q) follows a slightly weaker exponent than theoretically predicted q"−"3"."1"5 but is closer to the results of the molecular dynamics simulation. At low wave vectors, the dependence becomes even weaker, which may be a sign of influence of charge carriers on the dynamics of undulations longer than 10 nm. The technique presented can be used for studying physics of flexural phonons in other 2D materials. - Highlights: • A technique for measuring free-standing 2D crystal corrugation is proposed. • The height-to-height correlation function of the suspended graphene corrugation is measured. • Various parameters of the intrinsic graphene properties are experimentally determined.

Polyvinylidene fluoride film as a capacitor dielectric

Science.gov (United States)

Dematos, H. V.

1981-01-01

Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2018-05-01

Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

Two-phase flow patterns in adiabatic and diabatic corrugated plate gaps

Science.gov (United States)

Polzin, A.-E.; Kabelac, S.; de Vries, B.

2016-09-01

Correlations for two-phase heat transfer and pressure drop can be improved considerably, when they are adapted to specific flow patterns. As plate heat exchangers find increasing application as evaporators and condensers, there is a need for flow pattern maps for corrugated plate gaps. This contribution presents experimental results on flow pattern investigations for such a plate heat exchanger background, using an adiabatic visualisation setup as well as a diabatic setup. Three characteristic flow patterns were observed in the considered range of two-phase flow: bubbly flow, film flow and slug flow. The occurrence of these flow patterns is a function of mass flux, void fraction, fluid properties and plate geometry. Two different plate geometries having a corrugation angle of 27° and 63°, respectively and two different fluids (water/air and R365mfc liquid/vapor) have been analysed. A flow pattern map using the momentum flux is presented.

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

Science.gov (United States)

Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

2018-05-01

The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

Transfer of hydrogen and helium through corrugated, flexible tubes

International Nuclear Information System (INIS)

Schippl, K.

2001-01-01

The transfer of liquid gas or cold gas through corrugated tubes is an alternative to rigid systems for the use in reactor technique. Advantages: flexibility for easy installation; these tubes together with their associated terminations and hardware are assembled, leak-tested and evacuated at the factory. This permits simple and cost saving installation on site. All tubes are helium leak-tested with a sensitivity of 10E -9 mbar 1/sec. Following the leak test, the vacuum space is pumped down to the operation vacuum level and properly sealed. The vacuum integrity is guaranteed as a result of the high degree of cleanliness observed during production and from the use of a specially selected better material inside the vacuum space. Disadvantage: pressure is limited to 20 bar. To fulfil all rules of the reactor safety, different tests have to be done. Because of the longitudinal weld of the corrugated tube, a bursting test of different sizes gives the best information of the liability of this kind of tube. It can be shown that the bursting pressure of such a tube is more than 5 times higher than the max. working pressure

Aeroacoustics of the swinging corrugated tube: Voice of the Dragon

NARCIS (Netherlands)

Nakiboglu, G.; Rudenko, O.; Hirschberg, Abraham

2012-01-01

When one swings a short corrugated pipe segment around one’s head, it produces a musically interesting whistling sound. As a musical toy it is called a “Hummer” and as a musical instrument, the “Voice of the Dragon.” The fluid dynamics aspects of the instrument are addressed, corresponding to the

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

Energy Technology Data Exchange (ETDEWEB)

Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

2013-09-20

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

International Nuclear Information System (INIS)

Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

2013-01-01

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

Effects of carbon coating and pore corrugation on capillary condensation of nitrogen in SBA-15 mesoporous silica.

Science.gov (United States)

Morishige, Kunimitsu

2013-09-24

To examine the origin of an ink-bottle-like structure in SBA-15 formed by carbon coating and the effects of pore corrugation on capillary condensation and evaporation of a vapor in the cylindrical pores, we measured the adsorption isotherms of nitrogen at 77 K on 10 kinds of SBA-15 samples before and after a carbon coating process by the exposure to acetylene at 1073 K, as well as desorption scanning curves and subloops on the untreated samples. These SBA-15 samples were synthesized under the different conditions of initial SiO2/P123 ratio and hydrothermal treatment. SBA-15 with relatively large microporosity tends to form easily constrictions inside the main channels by the carbon coating. This strongly suggests that the rough pore walls of SBA-15 may induce the incomplete wetting of carbon layers on the pore walls to form the constrictions inside the cylindrical pores. A comparison of two subloops implies that the pores of SBA-15 synthesized with a SiO2/P123 ratio of 75 consist of an assembly of connecting domains of different diameters; that is, the pores are highly corrugated. For SBA-15 synthesized with a SiO2/P123 ratio of 60, the amplitude of the pore corrugation is significantly decreased by the prolonged hydrothermal treatment at 373 K. On the other hand, for SBA-15 synthesized with a SiO2/P123 ratio of 45, the amplitude of the corrugation is negligibly small, although the cylindrical pores are interconnected through narrow necks with each other. It is found that the smaller the amplitude of the pore corrugation, the smaller the width of the hysteresis loop.

Characterization of plasmonic effects in thin films and metamaterials using spectroscopic ellipsometry

NARCIS (Netherlands)

Oates, T.W.H.; Wormeester, Herbert; Arwin, H.

2011-01-01

In this article, spectroscopic ellipsometry studies of plasmon resonances at metal–dielectric interfaces of thin films are reviewed. We show how ellipsometry provides valuable non-invasive amplitude and phase information from which one can determine the effective dielectric functions, and how these

Electrophoretically applied dielectrics for amorphous metal foils used in pulsed power saturable reactors

International Nuclear Information System (INIS)

Sharp, D.J.; Harjes, H.C.; Mann, G.A.

1989-01-01

Amorphous metal foil-wound inductors have been tested as ferromagnetic saturable inductive elements for pulsed-power (multi-terawatt) switching modules in the inertial confinement fusion program at Sandia National Laboratories. In simulated capacitor testing premature dielectric breakdown of thin polyethylene terephthalate film insulation in the inductor windings occurs at considerably below 2500 V. This appears to be due to inadvertant dielectric damage from micro-spikes on the amorphous foil surface. Electron micrographs and dielectric breakdown data illustrate that electrophoretically-applied dielectric coatings, deposited from organic aqueous colloid dispersions, can be used to provide insulating coatings on the foil which provide a 240% improvement (6000 V) in the breakdown strength of wound amorphous foil inductors. The theory and operation of a dedicated electrophoretic continuous coating system is described. The machine was constructed and successfully applied for dielectric coating of amorphous metal foil. Additional possible applications exist for practical dielectric coating of metallic films or foils used in various commercial wound-type capacitor structures. 7 refs., 9 figs

Impact of interfacial imperfection on transverse wave in a functionally graded piezoelectric material structure with corrugated boundaries

Science.gov (United States)

Kumar Singh, Abhishek; Kumar, Santan; Kumari, Richa

2018-03-01

The propagation behavior of Love-type wave in a corrugated functionally graded piezoelectric material layered structure has been taken into account. Concretely, the layered structure incorporates a corrugated functionally graded piezoelectric material layer imperfectly bonded to a functionally graded piezoelectric material half-space. An analytical treatment has been employed to determine the dispersion relation for both cases of electrically open condition and electrically short condition. The phase velocity of the Love-type wave has been computed numerically and its dependence on the wave number has been depicted graphically for a specific type of corrugated boundary surfaces for both said conditions. The crux of the study lies in the fact that the imperfect bonding of the interface, the corrugated boundaries present in the layer, and the material properties of the layer and the half-space strongly influence the phase velocity of the Love-type wave. It can be remarkably noted that the imperfect bonding of the interface reduces the phase velocity of the Love-type wave significantly. As a special case of the problem, it is noticed that the procured dispersion relation for both cases of electrically open and electrically short conditions is in accordance with the classical Love wave equation.

Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

International Nuclear Information System (INIS)

Ramesh, S.; Chai, M.F.

2007-01-01

Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt in the polymer electrolyte complexes

Development of ideal solution and validation of stiffness and strength by finite element method for truss-wall corrugated cellular solids

International Nuclear Information System (INIS)

Choi, Jeong Ho; Lee, Jung Hwan; Lee, Je Hyun

2014-01-01

The objective of this study is to find the density, stiffness, and strength of truss-wall unit cell models. The diamond-corrugation, triangular-corrugation, and Navtruss-corrugation models are used for the unit cell. The ideal solutions derived for these are based on solid wall unit cell models and are developed using the Gibson-Ashby theory. To verify the ideal solutions of the models, the density, strength, and stiffness are simulated using ABAQUS software and compared with the ideal solutions on a log-log scale. The material properties of stainless steel 304 are applied. The diameter is 0.5 mm; the opening width is 0.5 mm; and the corrugation angle is 45 .deg. . Consequently, the relative Young's modulus and relative yield strength of the truss-wall unit models are good matches for the ideal expectations. It may be possible to apply a truss-wall model to diverse fields such as transportation or biomedical applications as one of the open-cell cellular solids.

Development of ideal solution and validation of stiffness and strength by finite element method for truss-wall corrugated cellular solids

Energy Technology Data Exchange (ETDEWEB)

Choi, Jeong Ho [Samjung E and W, Changwon (Korea, Republic of); Lee, Jung Hwan [Korea Institute of Materials Science,Changwon (Korea, Republic of); Lee, Je Hyun [Changwon National University, Changwon (Korea, Republic of)

2014-05-15

The objective of this study is to find the density, stiffness, and strength of truss-wall unit cell models. The diamond-corrugation, triangular-corrugation, and Navtruss-corrugation models are used for the unit cell. The ideal solutions derived for these are based on solid wall unit cell models and are developed using the Gibson-Ashby theory. To verify the ideal solutions of the models, the density, strength, and stiffness are simulated using ABAQUS software and compared with the ideal solutions on a log-log scale. The material properties of stainless steel 304 are applied. The diameter is 0.5 mm; the opening width is 0.5 mm; and the corrugation angle is 45 .deg. . Consequently, the relative Young's modulus and relative yield strength of the truss-wall unit models are good matches for the ideal expectations. It may be possible to apply a truss-wall model to diverse fields such as transportation or biomedical applications as one of the open-cell cellular solids.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

Science.gov (United States)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Nanomechanical probing of thin-film dielectric elastomer transducers

Science.gov (United States)

Osmani, Bekim; Seifi, Saman; Park, Harold S.; Leung, Vanessa; Töpper, Tino; Müller, Bert

2017-08-01

Dielectric elastomer transducers (DETs) have attracted interest as generators, actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. Their performance crucially depends on the elastic properties of the electrode-elastomer sandwich structure. The compressive displacement of a single-layer DET can be easily measured using atomic force microscopy (AFM) in the contact mode. While polymers used as dielectric elastomers are known to exhibit significant mechanical stiffening for large strains, their mechanical properties when subjected to voltages are not well understood. To examine this effect, we measured the depths of 400 nanoindentations as a function of the applied electric field using a spherical AFM probe with a radius of (522 ± 4) nm. Employing a field as low as 20 V/μm, the indentation depths increased by 42% at a load of 100 nN with respect to the field-free condition, implying an electromechanically driven elastic softening of the DET. This at-a-glance surprising experimental result agrees with related nonlinear, dynamic finite element model simulations. Furthermore, the pull-off forces rose from (23.0 ± 0.4) to (49.0 ± 0.7) nN implying a nanoindentation imprint after unloading. This embossing effect is explained by the remaining charges at the indentation site. The root-mean-square roughness of the Au electrode raised by 11% upon increasing the field from zero to 12 V/μm, demonstrating that the electrode's morphology change is an undervalued factor in the fabrication of DET structures.

Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Pandey, G. N., E-mail: gnpandey2009@gmail.com [Department of Physics, Amity Institute of Applied Sciences, AmityUniversity, Noida (U.P.) (India); Kumar, Narendra [Department of Physics (CASH), Modi University of Science and Technology, Lakshmangarh, Sikar, Rajsthan (India); Thapa, Khem B. [Department of Physics, U I E T, ChhatrapatiShahu Ji Maharaj University, Kanpur- (UP) (India); Ojha, S. P. [Department of Physics IIT, Banaras Hindu University (India)

2016-05-06

Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractive index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.

Long-range surface polaritons in thin layers of absorbing materials

NARCIS (Netherlands)

Zhang, Y.

2011-01-01

Long-range surface polaritons (LRSPs) are electromagnetic surface modes confined at the interfaces of an thin film surrounded by a homogeneous dielectric. These modes are generally characterized by the subwavelength confinement and the long propagation length. In case of a metallic thin film, the

Collective modes and dielectric and superconducting properties of electronic systems in confined geometries

International Nuclear Information System (INIS)

Ulloa, S.E.

1984-01-01

The dielectric response function of electronic systems in restricted geometries is studied as well as some of the consequences, using the self-consistent field method. These consequences include: 1) existence of multiple branches of longitudinal slender acoustic plasma oscillations (SAP) in thin wires; 2) a new superconductivity mechanism in thin wires via the exchange of SAPs by the electrons forming the Cooper pairs, and 3) reduction of the static screening offered by the valence electrons in a thin semiconductor film with respect to the bulk case. The SAP modes are collective modes shown to exist only in thin wires and neither in a bulk system nor in a thin film. They have linear dispersion relations with phase velocities smaller than the Fermi velocity of the system and are not Landau-damped. Numerical examples of these SAP modes in metallic and semiconductor wires are presented, showing that they sould be more easily observable in semiconductor structures. The SAP-induced mechanism of superconductivity is shown to possibly give higher critical temperature T/sub c/ than the phonon mechanism in thin wires. The author presents a semi-rigorous calculation of T/sub c/ and shows that by increasing the frequency of the SAP modes and having a small effective electron mass one would be able to increase T/sub c/. He also shows that the dielectric function of a thin semiconductor slab is wavenumber dependent even at long wavelengths and is not a constant as in the bulk case

Measuring autogenous strain of concrete with corrugated moulds

DEFF Research Database (Denmark)

Tian, Qian; Jensen, Ole Mejlhede

2008-01-01

A reliable technique to quantify autogenous strain is a prerequisite to numerical modeling in stress calculations for high performance concrete. The introducing of a special kind of corrugated tube mould helps to transforming volume strain measurement into liner strain measurement in horizontal...... direction for fluid concrete, which not only realizes the continuous monitoring of the autogenous shrinkage since casting, but also effectively eliminates the disturbance resulting from gravity, temperature variation and mould restraint on measuring results. Based on this measuring technique, this paper...

Shear evaluation of tapered bridge girder panels with steel corrugated webs near the supports of continuous bridges

OpenAIRE

Zevallos, E.; Hassanein, M.F.; Real Saladrigas, Esther; Mirambell Arrizabalaga, Enrique

2016-01-01

Because of public construction budgets were cut over the last few years, new bridge girders with corrugated webs to reduce the construction costs have become more widely studied and used. In spite that tapered bridge girders with corrugated webs (BGCWs) are used in modern bridges, their shear strength and behaviour rarely exists in literature. Based on available literature, the web of the linearly tapered BGCWs may be divided into three typologies with different structural response to shear f...

Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability

Directory of Open Access Journals (Sweden)

Jaehoon Park

2010-06-01

Full Text Available We investigated the electrical stabilities of two types of pentacene-based organic thin-film transistors (OTFTs with two different polymeric dielectrics: polystyrene (PS and poly(4-vinyl phenol (PVP, in terms of the interfacial charge depletion. Under a short-term bias stress condition, the OTFT with the PVP layer showed a substantial increase in the drain current and a positive shift of the threshold voltage, while the PS layer case exhibited no change. Furthermore, a significant increase in the off-state current was observed in the OTFT with the PVP layer which has a hydroxyl group. In the presence of the interfacial hydroxyl group in PVP, the holes are not fully depleted during repetitive operation of the OTFT with the PVP layer and a large positive gate voltage in the off-state regime is needed to effectively refresh the electrical characteristics. It is suggested that the depletion-limited holes at the interface, i.e., interfacial charge depletion, between the PVP layer and the pentacene layer play a critical role on the electrical stability during operation of the OTFT.

Switchable directional excitation surface plasmon polaritons with dielectric nanoantennas

DEFF Research Database (Denmark)

Sinev, I.; Komissarenko, F.; Bogdanov, A.

2017-01-01

We demonstrate directional launching of surface plasmon polaritons on thin goldfilm with a single silicon nanosphere. The directivity pattern of the excited surface waves exhibits rapid switching from forward to backward excitation, which is driven by the mutual interference of magnetic and elect...... and electric dipole moments supported by the dielectric nanoantenna....

Estimation of optical constants of a bio-thin layer (onion epidermis), using SPR spectroscopy

International Nuclear Information System (INIS)

Rehman, Saif-ur-; Hayashi, Shinji; Sekkat, Zouheir; Mumtaz, Huma; Shaukat, S F

2014-01-01

We estimate the optical constants of a biological thin layer (Allium cepa) by surface plasmon resonance (SPR) spectroscopy. For this study, the fresh inner thin epidermis of an onion bulb was used and stacked directly on gold (Au) and silver (Ag) film surfaces in order to identify the shift in SPR mode of each metal film at an operating wavelength of 632.8 nm. The thickness and dielectric constants of the biological thin layer were determined by matching the experimental SPR curves to theoretical ones. The thickness and roughness of bare Au and Ag thin films were also measured by atomic force microscopy (AFM); the results of which are in good agreement with those obtained through experiment. Due to the high surface roughness of the natural onion epidermis layer, AFM could not measure the exact thickness of an onion epidermis. It is estimated that the value of the real part of the dielectric constant of an onion epidermis is between the dielectric constants of water and air. (paper)

Reversal of neuromuscular block with sugammadex: a comparison of the corrugator supercilii and adductor pollicis muscles in a randomized dose-response study.

Science.gov (United States)

Yamamoto, S; Yamamoto, Y; Kitajima, O; Maeda, T; Suzuki, T

2015-08-01

Neuromuscular monitoring using the corrugator supercilii muscle is associated with a number of challenges. The aim of this study was to assess reversal of a rocuronium-induced neuromuscular blockade with sugammadex according to monitoring either using the corrugator supercilii muscle or the adductor pollicis muscle. We hypothesized that a larger dose of sugammadex would be required to obtain a train-of-four (TOF) ratio of 1.0 with the corrugator supercilii muscle than with the adductor pollicis muscle. Forty patients aged 20-60 years and 40 patients aged ≥ 70 years were enrolled. After induction of anesthesia, we recorded the corrugator supercilii muscle response to facial nerve stimulation and the adductor pollicis muscle response to ulnar nerve stimulation using acceleromyography. All patients received 1 mg/kg rocuronium. When the first twitch (T1) of TOF recovered to 10% of control values at the corrugator supercilii, rocuronium infusion was commenced to maintain a T1 of 10% of the control at the corrugator supercilii. Immediately after discontinuation of rocuronium infusion, 2 mg/kg or 4 mg/kg of sugammadex was administered. The time for recovery to a TOF ratio of 1.0 and the number of patients not reaching a TOF ratio of 1.0 by 5 min at each dose and muscle was recorded. When neuromuscular block at the corrugator supercilii was maintained at a T1 of 10% of control, that at the adductor pollicis was deep (post-tetanic count ≤ 5). Sugammadex 4 mg/kg completely antagonized neuromuscular block at both muscles within 5 min. The time to a TOF ratio of 1.0 at the adductor pollicis was significantly longer in the group ≥ 70 years than the group 20-60 years (mean (SD): 178 (42.8) s vs. 120 (9.4) s, P sugammadex reversed neuromuscular blockade at the corrugator supercilii but not at the adductor pollicis, with 10 patients in the group 20-60 years and 8 patients in the group ≥ 70 years requiring an additional sugammadex (P�

Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

International Nuclear Information System (INIS)

Cho, Min Sung; Yamamoto, Akio

2016-01-01

Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

Energy Technology Data Exchange (ETDEWEB)

Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

2016-09-15

Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

International Nuclear Information System (INIS)

Dudek, Piotr

2011-01-01

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

Energy Technology Data Exchange (ETDEWEB)

Ramesh, S. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)]. E-mail: ramesh@mail.utar.edu.my; Chai, M.F. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)

2007-05-15

Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt in the polymer electrolyte complexes.

High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

2010-04-15

Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

Dielectric films for solar and laser-pushed lightsails

International Nuclear Information System (INIS)

Landis, Geoffrey A.

2000-01-01

This project analyzed the potential use of dielectric thin films for solar and laser sails. Such light-pushed sails allow the possibility of fuel-free propulsion in space. This makes possible missions of extremely high delta-V, potentially as high as 30,000 km/sec (0.1c), which is required for a fly-by mission to a nearby star

Corrugation in the nitrogen-graphite potential probed by inelastic neutron scattering

DEFF Research Database (Denmark)

Hansen, Flemming Yssing; Frank, V. L. P.; Taub, H.

1990-01-01

-center energy gap of ∼0.4 THz in the acoustic-phonon branches is a factor of 2 larger than calculated from central atom-atom potentials. We conclude that current models of the corrugation in the adatom substrate potential greatly underestimate the lateral restoring forces in this relatively simple molecular...

A study of the microstructure and optical properties of thin lead-dielectric cermet films. Ph.D. Thesis - Va. Polytechnic Inst. and State Univ.

Science.gov (United States)

Owen, R. B.

1972-01-01

A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices.

Fabrication and Performance Study of Uniform Thin Film Integrated ...

African Journals Online (AJOL)

The transmission line model of a uniform rectangular thin film R-C-KR structure consisting of a dielectric layer of constant per unit shunt capacitance C sandwiched between two resistive thin films of constant per unit length resistances R and KR has been analysed using the concept of matrix parameter functions. The above ...

Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

Science.gov (United States)

Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

2017-11-01

Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

Soda-Anthraquinone Durian (Durio Zibethinus Murr.) Rind Linerboard and Corrugated Medium Paper: A Preliminary Test

Science.gov (United States)

Rizal Masrol, Shaiful; Irwan Ibrahim, Mohd Halim; Adnan, Sharmiza; Mubarak Sa'adon, Amir; Ika Sukarno, Khairil; Fadrol Hisham Yusoff, Mohd

2017-08-01

A preliminary test was conducted to investigate the characteristics of linerboard and corrugated medium paper made from durian rind waste. Naturally dried durian rinds were pulped according to Soda-Anthraquinone (Soda-AQ) pulping process with a condition of 20% active alkali, 0.1% AQ, 7:1 liquor to material ratio, 120 minutes cooking time and 170°C cooking temperature. The linerboard and corrugated medium paper with a basis weight of 120 gsm were prepared and evaluated according to Malaysian International Organization for Standardization (MS ISO) and Technical Association of the Pulp and Paper Industry (TAPPI). The results indicate that the characteristics of durian rind linerboard are comparable with other wood or non-wood based paper and current commercial paper. However, low CMT value for corrugated medium and water absorptiveness quality for linerboard could be improved in future. Based on the bulk density (0.672 g/cm3), burst index (3.12 kPa.m2/g) and RCT (2.00 N.m2/g), the durian rind has shown a good potential and suitable as an alternative raw material source for linerboard industry.

Numerical Investigation of Structural Response of Corrugated Blast Wall Depending on Blast Load Pulse Shapes

Directory of Open Access Journals (Sweden)

Jung Min Sohn

Full Text Available Abstract Hydrocarbon explosions are one of most hazardous events for workers on offshore platforms. To protect structures against explosion loads, corrugated blast walls are typically installed. However, the profiles of real explosion loads are quite different depending on the congestion and confinement of Topside structures. As the level of congestion and confinement increases, the explosion load increases by up to 8 bar, and the rising time of the load decreases. This study primarily aims to investigate the structural behavior characteristics of corrugated blast walls under different types of explosion loadings. Four loading shapes were applied in the structural response analysis, which utilized a dynamic nonlinear finite element method.

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

International Nuclear Information System (INIS)

Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

2015-01-01

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

Energy Technology Data Exchange (ETDEWEB)

Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

2015-09-28

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

Future directions of positron annihilation spectroscopy in low-k dielectric films

International Nuclear Information System (INIS)

Gidley, D.W.; Vallery, R.S.; Liu, M.; Peng, H.G.

2007-01-01

Positronium Annihilation Lifetime Spectroscopy (PALS) has become recognized in the microelectronics industry as one of only several methods capable of quantitatively characterizing engineered nanopores in next-generation (k < 2.2) interlayer dielectric (ILD) thin films. Successes and shortcomings of PALS to date will be assessed and compared with other methods of porosimetry such as ellipsometric and X-ray porosimetries (EP and XRP). A major theme in future low-k research focuses on the ability to integrate porous ILD's into chip fabrication; the vulnerability of porous dielectrics to etching, ashing, and chemical-mechanical polishing in process integration is delaying the introduction of ultra-low-k films. As device size approaches 45 nm the need to probe very small (sub-nanometer), semi-isolated pores beneath thin diffusion barriers is even more challenging. Depth-profiled PALS with its ability to determine a quantitative pore interconnection length and easily resolve 0.3 nm pores beneath diffusion barriers or in trench-patterned dielectrics should have a bright future in porous ILD research. The ability of PALS (and PAS in general) to deduce evolution and growth of pores with porosity should find broad applicability in the emerging field of high performance materials with strategically engineered nanopores. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

DEFF Research Database (Denmark)

Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager

2015-01-01

Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

Quantifying wave propagation over a corrugated metal using 5 dBi antennas

CSIR Research Space (South Africa)

Nkosi, MC

2015-09-01

Full Text Available corrugated metal of a shipping container and also in a free space. The free space measurement is used as a reference point to study the influence of the metal on the wave propagation. The transmission coefficient measured over the shipping container...

Psychometric properties of startle and corrugator response in NPU, affective picture viewing, and resting state tasks.

Science.gov (United States)

Kaye, Jesse T; Bradford, Daniel E; Curtin, John J

2016-08-01

The current study provides a comprehensive evaluation of critical psychometric properties of commonly used psychophysiology laboratory tasks/measures within the NIMH RDoC. Participants (N = 128) completed the no-shock, predictable shock, unpredictable shock (NPU) task, affective picture viewing task, and resting state task at two study visits separated by 1 week. We examined potentiation/modulation scores in NPU (predictable or unpredictable shock vs. no-shock) and affective picture viewing tasks (pleasant or unpleasant vs. neutral pictures) for startle and corrugator responses with two commonly used quantification methods. We quantified startle potentiation/modulation scores with raw and standardized responses. We quantified corrugator potentiation/modulation in the time and frequency domains. We quantified general startle reactivity in the resting state task as the mean raw startle response during the task. For these three tasks, two measures, and two quantification methods, we evaluated effect size robustness and stability, internal consistency (i.e., split-half reliability), and 1-week temporal stability. The psychometric properties of startle potentiation in the NPU task were good, but concerns were noted for corrugator potentiation in this task. Some concerns also were noted for the psychometric properties of both startle and corrugator modulation in the affective picture viewing task, in particular, for pleasant picture modulation. Psychometric properties of general startle reactivity in the resting state task were good. Some salient differences in the psychometric properties of the NPU and affective picture viewing tasks were observed within and across quantification methods. © 2016 The Authors. Psychophysiology published by Wiley Periodicals, Inc. on behalf of Society for Psychophysiological Research.

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

International Nuclear Information System (INIS)

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

2013-01-01

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

Low frequency ac conduction and dielectric relaxation in poly(N ...

Indian Academy of Sciences (India)

The ac conductivity and dielectric constant of poly(N-methyl pyrrole) thin films have been investigated in the temperature range 77–350 K and in the frequency range 102–106 Hz. The well defined loss peaks have been observed in the temperature region where measured ac conductivity approaches dc conductivity.

Nanopolar reorientation in ferroelectric thin films

International Nuclear Information System (INIS)

Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

2001-01-01

The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

Structural and electrical properties of Ta2O5 thin films prepared by ...

Indian Academy of Sciences (India)

The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV- lamps. Effects of UV- lamp powers on the structural and electrical properties were discussed. Keywords. Chemical vapour deposition processes; oxides; dielectric material; MOS capacitor. 1. Introduction.

Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

International Nuclear Information System (INIS)

Shin, Sang-Il; Kwon, Jae-Hong; Ju, Byeong-Kwon; Kang, Hochul

2008-01-01

The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10 −2 cm 2 V −1 s −1 , a current on/off ratio of 10 5 , a threshold voltage of −2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film

Dielectric properties of thin C r2O3 films grown on elemental and oxide metallic substrates

Science.gov (United States)

Mahmood, Ather; Street, Michael; Echtenkamp, Will; Kwan, Chun Pui; Bird, Jonathan P.; Binek, Christian

2018-04-01

In an attempt to optimize leakage characteristics of α-C r2O3 thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and V2O3 (0001), supported on A l2O3 substrate. The local conductivity was measured by conductive atomic force microscopy mapping of C r2O3 surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, the C r2O3 film on V2O3 exhibited no leakage paths at similar tip bias value. Electrical resistance measurements through e-beam patterned top electrodes confirmed the resistivity mismatch between the films grown on different electrodes. The x-ray analysis attributes this difference to the twin free C r2O3 growth on V2O3 seeding.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

Science.gov (United States)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Stark effect of excitons in corrugated lateral surface superlattices: effect of centre-of-mass quantization

International Nuclear Information System (INIS)

Hong Sun

1998-11-01

The quantum confined Stark effect (QCSE) of excitons in GaAs/AlAs corrugated lateral surface superlattices (CLSSLs) is calculated. Blue and red shifts in the exciton energies are predicted for the heavy- and light-excitons in the CLSSLs, respectively, comparing with those in the unmodulated quantum well due to the different effective hole masses in the parallel direction. Sensitive dependence of the QCSE on the hole effective mass in the parallel direction is expected because of the ''centre-of-mass'' quantization (CMQ) induced by the periodic corrugated interfaces of the CLSSLs. The effect of the CMQ on the exciton mini-bands and the localization of the excitons in the CLSSLs is discussed. (author)

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

Science.gov (United States)

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

Measurement with corrugated tubes of early-age autogenous shrinkage of cement-based material

DEFF Research Database (Denmark)

Tian, Qian; Jensen, Ole Mejlhede

2009-01-01

The use of a special corrugated mould enables transformation of volume strain into horizontal, linear strain measurement in the fluid stage. This allows continuous measurement of the autogenous shrinkage of cement-based materials since casting, and also effectively eliminates unwanted influence...

FDTD modeling of thin impedance sheets

Science.gov (United States)

Luebbers, Raymond J.; Kunz, Karl S.

1991-01-01

Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

Swimming behaviour and ascent paths of brook trout in a corrugated culvert

Science.gov (United States)

Goerig, Elsa; Bergeron, Normand E.; Castro-Santos, Theodore R.

2017-01-01

Culverts may restrict fish movements under some hydraulic conditions such as shallow flow depths or high velocities. Although swimming capacity imposes limits to passage performance, behaviour also plays an important role in the ability of fish to overcome velocity barriers. Corrugated metal culverts are characterized by unsteady flow and existence of low‐velocity zones, which can improve passage success. Here, we describe swimming behaviour and ascent paths of 148 wild brook trout in a 1.5‐m section of a corrugated metal culvert located in Raquette Stream, Québec, Canada. Five passage trials were conducted in mid‐August, corresponding to specific mean cross‐sectional flow velocities ranging from 0.30 to 0.63 m/s. Fish were individually introduced to the culvert and their movements recorded with a camera located above the water. Lateral and longitudinal positions were recorded at a rate of 3 Hz in order to identify ascent paths. These positions were related to the distribution of flow depths and velocities in the culvert. Brook trout selected flow velocities from 0.2 to 0.5 m/s during their ascents, which corresponded to the available flow velocities in the culvert at the low‐flow conditions. This however resulted in the use of low‐velocity zones at higher flows, mainly located along the walls of the culvert. Some fish also used the corrugations for sheltering, although the behaviour was marginal and did not occur at the highest flow condition. This study improves knowledge on fish behaviour during culvert ascents, which is an important aspect for developing reliable and accurate estimates of fish passage ability.

Spoof surface plasmon modes on doubly corrugated metal surfaces at terahertz frequencies

International Nuclear Information System (INIS)

Liu, Yong-Qiang; Kong, Ling-Bao; Du, Chao-Hai; Liu, Pu-Kun

2016-01-01

Spoof surface plasmons (SSPs) have many potential applications such as imaging and sensing, communications, innovative leaky wave antenna and many other passive devices in the microwave and terahertz (THz) spectrum. The extraordinary properties of SSPs (e.g. extremely strong near field, enhanced beam–wave interaction) make them especially attractive for developing novel THz electronic sources. SSP modes on doubly corrugated metal surfaces are investigated and analyzed both theoretically and numerically in this paper. The analytical SSP dispersion expressions of symmetric and anti-symmetric modes are obtained with a simplified modal field expansion method; the results are also verified by the finite integration method. Additionally, the propagation losses are also considered for real copper surfaces with a limited constant conductivity in a THz regime. It is shown that the asymptotical frequency of the symmetric mode at the Brillouin boundary decreases along with the decreased gap size between these two corrugated metal surfaces while the asymptotical frequency increases for the anti-symmetric mode. The anti-symmetric mode demonstrates larger propagation losses than the symmetric mode. Further, the losses for both symmetric and anti-symmetric modes decrease when this gap size enlarges. By decreasing groove depth, the asymptotical frequency increases for both the symmetric and the anti-symmetric mode, but the variation of propagation losses is more complicated. Propagation losses increase along with the increased period. Our studies on the dispersion characteristics and propagation losses of SSP modes on this doubly corrugated metallic structure with various parameters is instructive for numerous applications such as waveguides, circuitry systems with high integration, filters and powerful electronic sources in the THz regime. (paper)

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

Energy Technology Data Exchange (ETDEWEB)

Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

2014-07-21

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

Science.gov (United States)

Chia-Song, Wu; Hsing-Chung, Liu

2009-11-01

This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

International Nuclear Information System (INIS)

Lee, Se-Won; Cho, Won-Ju

2012-01-01

The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

Analysis of transmittance properties in 1D hybrid dielectric photonic crystal containing superconducting thin films

Science.gov (United States)

Soltani, Osswa; Zaghdoudi, Jihene; Kanzari, Mounir

2018-06-01

By means of two fluid model and transfer matrix method (TMM), we investigate theoretically the transmittance properties of a defective hybrid dielectric-dielectric photonic crystal that contains a superconducting material as a defect layer. The considered hybrid photonic structure is: H(LH) 7(HLSLH) P H(LH) 7 , where H is the high refractive index dielectric, L is the low refractive index dielectric, S is the superconducting material and P is the repetitive number. The results show that the variation of the number and the positions of the transmissions modes depend strongly on the repetitive number P, the temperature T and the thickness of the layer S. An improvement of the spectral response is obtained with the exponential gradation of layer thicknesses dj =d0 + βejα , where d0 is the initial thickness of the layer j, α and β are two particular constants for each material. In addition, the effect of the incident angle for both transverse electric (TE) and transverse magnetic (TM) polarizations on the transmittance spectrum is discussed. As a result, we propose a tunable narrow stop-band polychromatic filter that covers the visible wavelength.

Tunability, dielectric, and piezoelectric properties of Ba{sub (1−x)}Ca{sub x}Ti{sub (1−y)}Zr{sub y}O{sub 3} ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Daumont, C. J. M., E-mail: christophe.daumont@univ-tours.fr; Le Mouellic, E.; Negulescu, B.; Wolfman, J. [Laboratoire GREMAN, UMR7347 CNRS, Faculté de Sciences et Techniques, Université François Rabelais, 37200 Tours (France); Simon, Q.; Payan, S.; Maglione, M. [Institute of Condensed Matter Chemistry of Bordeaux, ICMCB-CNRS, Université de Bordeaux, 33608 Pessac Cedex (France); Gardes, P.; Poveda, P. [STMicroelectronics, 10 rue Thalès de Milet, 37071 Tours Cedex (France)

2016-03-07

Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under electric field, are widely used in electronics for RF tunable applications (e.g., antenna impedance matching). Current devices use barium strontium titanate as the tunable dielectric, and the need for performance enhancement of the tunable element is the key for device improvement. We report here on libraries of Ba{sub 0.97}Ca{sub 0.03}Ti{sub 1−x}Zr{sub x}O{sub 3} thin films (0 ≤ x ≤ 27%) with a thickness of about 130 nm deposited on IrO{sub 2}/SiO{sub 2}/Si substrates using combinatorial pulsed laser deposition allowing for gradients of composition on one sample. A total of 600 capacitors on a single sample were characterized in order to statistically investigate the dielectric properties. We show that the tunabilty is maximum at intermediate compositions, reaching values up to 60% for an electric field of about 400 kV cm{sup −1}. We attribute the high tunability in the intermediate compositions to the paraelectric-ferroelectric phase transition, which is brought down to room temperature by the addition of Zr. In addition, the piezoelectric coefficient is found to be decreasing with increasing Zr content.

Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

Science.gov (United States)

Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

2016-05-01

BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

Dielectric properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

Science.gov (United States)

Alema, Fikadu; Pokhodnya, Konstantin

2015-11-01

Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

Science.gov (United States)

Ukah, Ndubuisi Benjamin

This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

Carbon nanotube network thin-film transistors on flexible/stretchable substrates

Science.gov (United States)

Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

2016-03-29

This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector

Science.gov (United States)

Ren, Rui; Zhong, Zheng

2018-06-01

This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.

Evaluation of unencapsulated ceramic monolithic and MOS thin-film capacitors (25 to 3000C)

International Nuclear Information System (INIS)

Nance, W.R.

1982-01-01

Several commercial monolithic ceramic and thin-film MOS chip capacitors were evaluated for use in high temperature (300 0 C) geothermal instrumentation. Characteristics of the commonly used dielectric materials (NPO, X7R, BX) and temperature dependence of the insulation resistance are briefly discussed. Some ceramic capacitors with NPO dielectric materials had insulation resistances above 10 megohms at 300 0 C and less than 2% change in capacitance from 25 0 C to 300 0 C, while the X7R and BX dielectric materials exhibited insulation resistances below 10 megohm and changes in capacitance greater then 50%. The thin-film capacitors showed good stability at 300 0 C. However, during aging, bonds and bond pads presented a problem causing intermittently open circuits for some of the devices

Magnetically tunable dielectric, impedance and magnetoelectric response in MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3} composites thin films

Energy Technology Data Exchange (ETDEWEB)

Bala, Kanchan, E-mail: bala.kanchan1987@gmail.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India); Kotnala, R.K. [CSIR, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Negi, N.S., E-mail: nsn_phy_hpu@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India)

2017-02-15

We have synthesized piezomagnetic–piezoelectric composites thin films MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3}, where x=0.1, 0.2, and 0.3, using the metalorganic deposition (MOD) reaction method. The structural and microstructural analysis using the X-ray diffraction (XRD), AFM, and SEM reveals the presence of homogenous growth of both pervoskite and spinel phases in the composite films. Our results show that all the composites films exhibit good multiferroic as well as considerable magnetoelectric coupling. The impedance (Z′ and Z″) and electrical modulus (M′ and M″) Nyquist plots show distinct electrical responses with the magnetic field. Our analyses suggest that this electrical response arises due to the coexistence of the high resistive phase and the comparatively conductive phase in the MFO/PST composite films. The maximum magnetoelectric coefficient (α) is found to be 4.29 V Oe{sup −1} cm{sup −1} and 2.82 V Oe{sup −1} cm{sup −1} for compositions x=0.1 and 0.2. These values are substantially larger than those reported for bilayer composites thin films in literature and make them interesting for room temperature device applications. - Highlights: • Influence of Sr doping on multiferroic and magnetoelectric properties composites thin films of MnFe{sub 2}O{sub 4} and (Pb, Sr)TiO{sub 3}. • Dielectric constant and dielectric loss with application of magnetic field. • Magnetically tunable AC electrical properties. • Magnetoelectric coupling in MnFe{sub 2}O{sub 4}/(Pb, Sr)TiO{sub 3} composite films by passive method.

Restoration of s-polarized evanescent waves and subwavelength imaging by a single dielectric slab

International Nuclear Information System (INIS)

El Gawhary, Omar; Schilder, Nick J; Costa Assafrao, Alberto da; Pereira, Silvania F; Paul Urbach, H

2012-01-01

It was predicted a few years ago that a medium with negative index of refraction would allow for perfect imaging. Although no material has been found so far that behaves as a perfect lens, some experiments confirmed the theoretical predictions in the near-field, or quasi-static, regime where the behaviour of a negative index medium can be mimicked by a thin layer of noble metal, such as silver. These results are normally attributed to the excitation of surface plasmons in the metal, which only leads to the restoration of p-polarized evanescent waves. In this work, we show that the restoration of s-polarized evanescent waves and, correspondingly, sub-wavelength imaging by a single dielectric slab are possible. Specifically, we show that at λ = 632 nm a thin layer of GaAs behaves as a superlens for s-polarized waves. Replacing the single-metal slab by a dielectric is not only convenient from a technical point of view, it being much easier to deposit and control the thickness and flatness of dielectric films than metal ones, but also invites us to re-think the connection between surface plasmon excitation and the theory of negative refraction. (paper)

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

Science.gov (United States)

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Electrical characterization of thin film ferroelectric capacitors

NARCIS (Netherlands)

Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

2006-01-01

Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

International Nuclear Information System (INIS)

Xia, D X; Xu, J B

2010-01-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

A Study of the Dielectric Breakdown of SiO2 Films on Si by the Self- Quenching Technique

Science.gov (United States)

1974-10-01

Cambell . Much of the early work on the breakdown of oxide films in 2 1 Q MOS structures was done by N. Klein and his coworkers...Electron Physics, 26, Academic Press. New York (1969). P. J. Harrop and D. S. Cambell , "Dielectric Properties of Thin Films," Handbook of Thin Film

Stochastic and deterministic causes of streamer branching in liquid dielectrics

International Nuclear Information System (INIS)

Jadidian, Jouya; Zahn, Markus; Lavesson, Nils; Widlund, Ola; Borg, Karl

2013-01-01

Streamer branching in liquid dielectrics is driven by stochastic and deterministic factors. The presence of stochastic causes of streamer branching such as inhomogeneities inherited from noisy initial states, impurities, or charge carrier density fluctuations is inevitable in any dielectric. A fully three-dimensional streamer model presented in this paper indicates that deterministic origins of branching are intrinsic attributes of streamers, which in some cases make the branching inevitable depending on shape and velocity of the volume charge at the streamer frontier. Specifically, any given inhomogeneous perturbation can result in streamer branching if the volume charge layer at the original streamer head is relatively thin and slow enough. Furthermore, discrete nature of electrons at the leading edge of an ionization front always guarantees the existence of a non-zero inhomogeneous perturbation ahead of the streamer head propagating even in perfectly homogeneous dielectric. Based on the modeling results for streamers propagating in a liquid dielectric, a gauge on the streamer head geometry is introduced that determines whether the branching occurs under particular inhomogeneous circumstances. Estimated number, diameter, and velocity of the born branches agree qualitatively with experimental images of the streamer branching

Electrophysical properties of microalloyed alumo-silicate ceramics as active dielectric

Directory of Open Access Journals (Sweden)

Purenović Jelena

2013-01-01

Full Text Available In this paper, electrophysical properties of porous alumo-silicate ceramics, modified by alloying with magnesium and microalloying with aluminum, were investigated. Complex multiphase system, as active microalloyed ceramics, has specific behavior under influence of external electrical field, which involves changes of dielectric losses and impedance, depending on frequency and temperature. Dielectric properties were measured in the frequency range 20 Hz - 1 MHz. Values for permittivity (εr ranged between 140 - 430. Order of magnitude for electrical resistivity was about 106 Ωm, for impedance 104 - 108 Ω, and loss tangent had values about and greater than 0.05. Current flow through active dielectric takes place through dielectric barrier and throughout conduction bands of thin aluminum and magnesium metal films. Permittivity has nonlinear distribution and complex functional dependences because of significant nonhomogeneity of active microalloyed ceramics. Lower values of electrical resistivity are the result of complex electron and ion transfer of charge through solid phase and pores, with decreased potential barriers height, due to the influence of additives, ingredients and defects. [Projekat Ministarstva nauke Republike Srbije, br. III 45012 i br. ON 172057

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

International Nuclear Information System (INIS)

Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

2014-01-01

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

Performance analysis of solar air heater with jet impingement on corrugated absorber plate

Directory of Open Access Journals (Sweden)

Alsanossi M. Aboghrara

2017-09-01

Full Text Available This paper deals with the experimental investigation outlet temperature and efficiency, of Solar Air heater (SAH. The experimental test set up designed and fabricated to study the effect of jet impingement on the corrugated absorber plate, through circular jets in a duct flow of solar air heater, and compared with conventional solar air heater on flat plat absorber. Under effect of mass flow rate (ṁ of air and solar radiation on outlet air temperature, and efficiency, are analyzed. Results show the flow jet impingement on corrugated plat absorber is a strong function of heat transfer enhancement. The present investigation concludes that the mass flow rate of air substantially influences the heat transfer on solar air heaters. And the thermal efficiency of proposed design duct is observed almost 14% more as compare to the smooth duct. At solar radiation 500–1000 (W/M2, 308 K ambient temperature and 0.01–0.03 (Kg/S mass flow rate

Thin films for precision optics

International Nuclear Information System (INIS)

Araujo, J.F.; Maurici, N.; Castro, J.C. de

1983-01-01

The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

Improvement of heat transfer by the use of corrugated surfaces; Amelioration du transfert de chaleur par l'emploi de surfaces corruguees

Energy Technology Data Exchange (ETDEWEB)

Gargaud, J; Paumard, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1964-07-01

This experimental work is designed to determine the friction coefficient and the Margoulis number of internally or externally corrugated cans cooled by air or CO{sub 2} under forced convection, when the Reynolds' number is between 1.5 * 10{sup 4} and 3.5 * 10{sup 6} Different corrugation profiles have been examined; they are made up of variously shaped threading, of rings, of transverse fins, of very small 'herring-bone fins, of undulations. Two types of test have been carried out: 1. tests in annular spaces using CO{sub 2} or air, where the gas circulates between an electrically heated corrugated nucleus having a constant flux and a smooth exterior channel. 2. tests on internally corrugated tubes heated by an external water current and cooled by an internal current of pressurized CO{sub 2}. The first type of test requires probe-measurement of the speeds and the temperatures in the fluid in order to obtain a friction coefficient and a Margoulis' number which are characteristic of the corrugated surface. These coefficients, on the other hand, are given directly by the second, type of test. This work shows the role and the importance of the various geometric and aerodynamic parameters such as relative roughness, the reduced pitch (ratio of the pitches at the height of the corrugation) and the Reynolds' number. (authors) [French] Ce travail experimental a pour objet la determination du coefficient de frottement et du nombre de Margoulis de gaines corruguees exterieurement ou interieurement, refroidies par de l'air ou du CO{sub 2} en convection forcee turbulente, pour des nombres de Reynolds compris entre 1,5.10{sup 4} et 3,5.10{sup 6}. Divers profils de corrugations ont ete examines; ils comprennent des filetages de formes variees, des anneaux, des ailettes transversales et des ailettes en chevrons de tres petites dimensions, des ondulations. Deux types d'essais ont ete realises: 1. des essais en espace annulaire, au CO{sub 2} ou a l'air, ou le gaz circule entre un

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

Science.gov (United States)

Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Atomic scale engineering of HfO{sub 2}-based dielectrics for future DRAM applications

Energy Technology Data Exchange (ETDEWEB)

Dudek, Piotr

2011-02-14

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO{sub 2} thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO{sub 2} (BaHfO{sub 3}) films and Ti-added BaHfO{sub 3} (BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO{sub 3} (k{proportional_to}38) and BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} (k{proportional_to}90) with respect to monoclinic HfO{sub 2} (k{proportional_to}19). Meanwhile the CET values scaled down to 1 nm for BaHfO{sub 3} and {proportional_to}0.8 nm for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} with respect to HfO{sub 2} (CET=1.5 nm). The Hf{sup 4+} ions substitution in BaHfO{sub 3} by Ti{sup 4+} ions led to a significant decrease of thermal budget from 900 C for BaHfO{sub 3} to 700 C for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}. Future studies need to focus

Approaching conversion limit with all-dielectric solar cell reflectors.

Science.gov (United States)

Fu, Sze Ming; Lai, Yi-Chun; Tseng, Chi Wei; Yan, Sheng Lun; Zhong, Yan Kai; Shen, Chang-Hong; Shieh, Jia-Min; Li, Yu-Ren; Cheng, Huang-Chung; Chi, Gou-chung; Yu, Peichen; Lin, Albert

2015-02-09

Metallic back reflectors has been used for thin-film and wafer-based solar cells for very long time. Nonetheless, the metallic mirrors might not be the best choices for photovoltaics. In this work, we show that solar cells with all-dielectric reflectors can surpass the best-configured metal-backed devices. Theoretical and experimental results all show that superior large-angle light scattering capability can be achieved by the diffuse medium reflectors, and the solar cell J-V enhancement is higher for solar cells using all-dielectric reflectors. Specifically, the measured diffused scattering efficiency (D.S.E.) of a diffuse medium reflector is >0.8 for the light trapping spectral range (600nm-1000nm), and the measured reflectance of a diffuse medium can be as high as silver if the geometry of embedded titanium oxide(TiO(2)) nanoparticles is optimized. Moreover, the diffuse medium reflectors have the additional advantage of room-temperature processing, low cost, and very high throughput. We believe that using all-dielectric solar cell reflectors is a way to approach the thermodynamic conversion limit by completely excluding metallic dissipation.

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

International Nuclear Information System (INIS)

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-01-01

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene–graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm 2  V −1  s −1 and a threshold voltage of −0.7 V at V gs = −40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm 2  V −1  s −1 and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. (paper)

Super dielectric capacitor using scaffold dielectric

OpenAIRE

Phillips, Jonathan

2018-01-01

Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

A tunable Fabry-Perot filter (λ/18) based on all-dielectric metamaterials

Science.gov (United States)

Ao, Tianhong; Xu, Xiangdong; Gu, Yu; Jiang, Yadong; Li, Xinrong; Lian, Yuxiang; Wang, Fu

2018-05-01

A tunable Fabry-Perot filter composed of two separated all-dielectric metamaterials is proposed and numerically investigated. Different from metallic metamaterials reflectors, the all-dielectric metamaterials are constructed by high-permittivity TiO2 cylinder arrays and exhibit high reflection in a broadband of 2.49-3.08 THz. The high reflection is attributed to the first and second Mie resonances, by which the all-dielectric metamaterials can serve as reflectors in the Fabry-Perot filter. Both the results from phase analysis method and CST simulations reveal that the resonant frequency of the as-proposed filter appears at 2.78 THz, responding to a cavity with λ/18 wavelength thickness. Particularly, the resonant frequency can be adjusted by changing the cavity thickness. This work provides a feasible approach to design low-loss terahertz filters with a thin air cavity.

Method of making dielectric capacitors with increased dielectric breakdown strength

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

2017-05-09

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Modeling of the plastic flow kinematics in the forming process of the lightweight flange corrugation

Directory of Open Access Journals (Sweden)

I. V. Fomenko

2012-01-01

Full Text Available The determination of the forming maximum possibilities of the flange corrugation by stretching with a free movement of the billets end in the rigid sectional matrices detachable by the flexible filler.

Diffraction by a grating made of a uniaxial dielectric-magnetic medium exhibiting negative refraction

Energy Technology Data Exchange (ETDEWEB)

Depine, Ricardo A [Grupo de Electromagnetismo Aplicado, Departamento de FIsica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon I, 1428 Buenos Aires (Argentina); Lakhtakia, Akhlesh [CATMAS-Computational and Theoretical Materials Sciences Group, Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802-6812 (United States); Department of Physics, Imperial College, London SW7 2BZ (United Kingdom)

2005-08-01

Diffraction of linearly polarized plane electromagnetic waves at the periodically corrugated boundary of vacuum and a linear, homogeneous, uniaxial, dielectric-magnetic medium is formulated as a boundary-value problem and solved using the Rayleigh method. The focus is on situations where the diffracted fields maintain the same polarization state as the s- or p-polarized incident plane wave. Attention is paid to two classes of diffracting media: those with negative definite permittivity and permeability tensors, and those with indefinite permittivity and permeability tensors. For the situations investigated, whereas the dispersion equations in the diffracting medium turn out to be elliptic for the first class of diffracting media, they are hyperbolic for the second class. Examples are reported with the first class of diffracting media of instances when the grating acts either as a positively refracting interface or as a negatively refracting interface. For the second class of diffracting media, hyperbolic dispersion equations imply the possibility of an infinite number of refraction channels.

Diffraction by a grating made of a uniaxial dielectric-magnetic medium exhibiting negative refraction

International Nuclear Information System (INIS)

Depine, Ricardo A; Lakhtakia, Akhlesh

2005-01-01

Diffraction of linearly polarized plane electromagnetic waves at the periodically corrugated boundary of vacuum and a linear, homogeneous, uniaxial, dielectric-magnetic medium is formulated as a boundary-value problem and solved using the Rayleigh method. The focus is on situations where the diffracted fields maintain the same polarization state as the s- or p-polarized incident plane wave. Attention is paid to two classes of diffracting media: those with negative definite permittivity and permeability tensors, and those with indefinite permittivity and permeability tensors. For the situations investigated, whereas the dispersion equations in the diffracting medium turn out to be elliptic for the first class of diffracting media, they are hyperbolic for the second class. Examples are reported with the first class of diffracting media of instances when the grating acts either as a positively refracting interface or as a negatively refracting interface. For the second class of diffracting media, hyperbolic dispersion equations imply the possibility of an infinite number of refraction channels

Modeling the dielectric logging tool at high frequency

International Nuclear Information System (INIS)

Chew, W.C.

1987-01-01

The high frequency dielectric logging tool has been used widely in electromagnetic well logging, because by measuring the dielectric constant at high frequencies (1 GHz), the water saturation of rocks could be known without measuring the water salinity in the rocks. As such, it could be used to delineate fresh water bearing zones, as the dielectric constant of fresh water is much higher than that of oil while they may have the same resistivity. The authors present a computer model, though electromagnetic field analysis, the response of such a measurement tool in a well logging environment. As the measurement is performed at high frequency, usually with small separation between the transmitter and receivers, some small geological features could be measured by such a tool. They use the computer model to study the behavior of such a tool across geological bed boundaries, and also across thin geological beds. Such a study could be very useful in understanding the limitation on the resolution of the tool. Furthermore, they could study the standoff effect and the depth of investigation of such a tool. This could delineate the range of usefulness of the measurement

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

Science.gov (United States)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Heat transfer and pressure drop studies of TiO2/DI water nanofluids in helically corrugated tubes using spiraled rod inserts

Science.gov (United States)

Anbu, S.; Venkatachalapathy, S.; Suresh, S.

2018-05-01

An experimental study on the convective heat transfer and friction factor characteristics of TiO2/DI water nanofluids in uniformly heated plain and helically corrugated tubes (HCT) with and without spiraled rod inserts (SRI) under laminar flow regime is presented in this paper. TiO2 nanoparticles with an average size of 32 nm are dispersed in deionized (DI) water to form stable suspensions containing 0.1, 0.15, 0.2, and 0.25% volume concentrations of nanoparticles. It is found that the inclusion of nanoparticles to DI water ameliorated Nusselt number which increased with nanoparticles concentration upto 0.2%. Two spiraled rod inserts made of copper with different pitches (pi = 50 mm and 30 mm) are inserted in both plain and corrugated tubes and it is found that the addition of these inserts increased the Nusselt number substantially. For Helically corrugated tube with lower pitch and maximum height of corrugation (pc = 8 mm, hc = 1 mm) with 0.2% volume concentration of nanoparticles, a maximum enhancement of 15% in Nusselt number is found without insert and with insert having lower pitch (pi = 30 mm) the enhancement is 34% when compared to DI water in plain tube. The results on friction factor show a maximum penalty of about 53.56% for the above HCT.

AC conductivity and dielectric properties of amorphous GexSb40-xSe60 thin films

International Nuclear Information System (INIS)

Atyia, H.E.; Farid, A.M.; Hegab, N.A.

2008-01-01

Measurements of AC conductivity and dielectric properties have been made for chalcogenide film samples of Ge x Sb 40-x Se 60 (with x=0, 10 and 20 at%) at different temperatures (303-393 K) and various frequencies (10 2 -10 5 Hz). It was found that the AC conductivity obeys the law σ(ω, T)=Aω s . The exponent s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W M was calculated from dielectric measurements according to the Guintini equation. It was found that the obtained value of W m agrees with that proposed by the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states N(E F ) has also been calculated for the studied compositions. The effect of decreasing the Sb content at the expense of the Ge content was investigated for the obtained results of the studied parameters

Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

Science.gov (United States)

Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

2017-08-01

The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

Science.gov (United States)

Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

2013-05-01

A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

Equilibrium and surface stability of liquid dielectric interface in electrical and gravitational fields

Energy Technology Data Exchange (ETDEWEB)

Ievlev, I I; Isers, A B

1976-01-01

An examination is made of the problem of locating the stable equilibrium surface shape of the interface between two liquid, uniform, isotropic, ideal dielectrics subject to the force of gravity, surface tension, and electrical forces. The conditions for the equilibrium and surface stability of the interface were obtained from the minimum free energy principle. These conditions are used for solving problems on locating the stable equilibrium interface boundary between two dielectrics positioned between infinite charged vertical plates, between infinite vertical coaxial cylinders, between infinite grounded plates and two horizontal charged thin cylinders placed between them. 8 references, 4 figures.

Improving indoor air quality by using the new generation of corrugated cardboard-based filters.

Science.gov (United States)

Candiani, Gabriele; Del Curto, Barbara; Cigada, Alberto

2012-09-27

Indoor Air Quality (IAQ) is strictly affected by the concentration of total suspended particulate matter (TSP). Air filtration is by far the most feasible suggestion to improve IAQ. Unfortunately, highly effective HEPA filters also have a few major weaknesses that have hindered their widespread use. There is therefore a renewed interest in developing novel, cost-effective filtration systems. We have recently reported the development of cardboard-based filters for bacterial removal that were further implemented and tested herein. A parallelepiped filter manufactured by aligning strips of corrugated cardboard and surrounded by a cardboard frame was specifically designed with an internal pocket holding a partially cut antistatic pleated fabric (HP). This filter, together with its parent version (CTRL) and a commercially sourced specimen (CAF), were assessed comparatively in a long-time test to assess their effectiveness on TSP removal. We found that the TSP abatement efficiency (E%) of the HP filter was relatively high and invariable over the 93 days of test and the pressure drop (PD%) decrease because of filter clogging was moderate. Most important, the HP filter was the most effective if assessed in terms of overall yield (Y%) and its performance was quite constant over the entire period considered. This work disclosed this novel class of corrugated cardboard-based filters as promising tools to ameliorate IAQ in light of their good TSP removal properties that endure over time. Moreover, cardboard is a lightweight, inexpensive, and eco-friendly material and corrugated cardboard-based air filters are very easy to shape and mount on and/or replace in existing ventilation systems.

Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

2013-05-15

In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

Dispersion of helically corrugated waveguides: Analytical, numerical, and experimental study

International Nuclear Information System (INIS)

Burt, G.; Ronald, K.; Young, A.R.; Phelps, A.D.R.; Cross, A.W.; Konoplev, I.V.; He, W.; Thomson, J.; Whyte, C.G.; Samsonov, S.V.; Denisov, G.G.; Bratman, V.L.

2004-01-01

Helically corrugated waveguides have recently been studied for use in various applications such as interaction regions in gyrotron traveling-wave tubes and gyrotron backward-wave oscillators and as a dispersive medium for passive microwave pulse compression. The paper presents a summary of various methods that can be used for analysis of the wave dispersion of such waveguides. The results obtained from an analytical approach, simulations with the three-dimensional numerical code MAGIC, and cold microwave measurements are analyzed and compared

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

Science.gov (United States)

Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

2017-05-01

Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

On the formation mechanisms of the diffuse atmospheric pressure dielectric barrier discharge in CVD processes of thin silica-like films

International Nuclear Information System (INIS)

Starostin, S A; Premkumar, P Antony; Creatore, M; Van Veldhuizen, E M; Van de Sanden, M C M; De Vries, H; Paffen, R M J

2009-01-01

Pathways of formation and temporal evolution of the diffuse dielectric barrier discharge at atmospheric pressure were experimentally studied in this work by means of optical (fast imaging camera) and electrical diagnostics. The chosen model system is relevant for applications of plasma-enhanced chemical vapor deposition of thin silica-like film on the polymeric substrate, from cost-efficient gas mixtures of Ar/N 2 /O 2 /hexamethyldisiloxane. It was found that the discharge can gradually experience the phases of homogeneous low current Townsend-like mode, local Townsend to glow transition and expanding high current density (∼0.7 A cm -2 ) glow-like mode. While the glow-like current spot occupies momentarily only a small part of the electrode area, its expanding behavior provides uniform treatment of the whole substrate surface. Alternatively, it was observed that a visually uniform discharge can be formed by the numerous microdischarges overlapping over the large electrode area.

On the formation mechanisms of the diffuse atmospheric pressure dielectric barrier discharge in CVD processes of thin silica-like films

Energy Technology Data Exchange (ETDEWEB)

Starostin, S A; Premkumar, P Antony [Materials Innovation Institute (M2i), Mekelweg 2, 2600 GA Delft, The Netherland (Netherlands); Creatore, M; Van Veldhuizen, E M; Van de Sanden, M C M [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); De Vries, H; Paffen, R M J [FUJIFILM Manufacturing Europe B.V, PO Box 90156, Tilburg (Netherlands)

2009-11-15

Pathways of formation and temporal evolution of the diffuse dielectric barrier discharge at atmospheric pressure were experimentally studied in this work by means of optical (fast imaging camera) and electrical diagnostics. The chosen model system is relevant for applications of plasma-enhanced chemical vapor deposition of thin silica-like film on the polymeric substrate, from cost-efficient gas mixtures of Ar/N{sub 2}/O{sub 2}/hexamethyldisiloxane. It was found that the discharge can gradually experience the phases of homogeneous low current Townsend-like mode, local Townsend to glow transition and expanding high current density ({approx}0.7 A cm{sup -2}) glow-like mode. While the glow-like current spot occupies momentarily only a small part of the electrode area, its expanding behavior provides uniform treatment of the whole substrate surface. Alternatively, it was observed that a visually uniform discharge can be formed by the numerous microdischarges overlapping over the large electrode area.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

Energy Technology Data Exchange (ETDEWEB)

Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

2016-01-15

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Development of a metrology method for composition and thickness of barium strontium titanate thin films

International Nuclear Information System (INIS)

Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

1998-01-01

Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

Removal of VOCs from air stream with corrugated sheet as adsorbent

Directory of Open Access Journals (Sweden)

Rabia Arshad

2016-10-01

Full Text Available A large proportional of volatile organic compounds (VOCs are released into the environment from various industrial processes. The current study elucidates an application of a simple adsorption phenomenon for removal of three main types of VOCs, i.e., benzene, xylene and toluene, from an air stream. Two kinds of adsorbents namely acid digested adsorbent and activated carbon are prepared to assess the removal efficiency of each adsorbent in the indoor workplace environment. The results illustrate that the adsorbents prepared from corrugated sheets were remarkably effective for the removal of each pollutant type. Nevertheless, activated carbon showed high potential of adsorbing the targeted VOC compared to the acid digested adsorbent. The uptake by the adsorbents was in the following order: benzene > xylene > toluene. Moreover, maximum adsorption of benzene, toluene and xylene occurred at 20 °C and 1.5 cm/s for both adsorbents whereas minimum success was attained at 30 °C and 1.0 cm/s. However, adsorption pattern are found to be similar for each of the the three aromatic hydrocarbons. It is concluded that the corrugated sheets waste can be a considered as a successful and cost-effective solution towards effective removal of targeted pollutants in the air stream.

Mass transport enhancement in redox flow batteries with corrugated fluidic networks

Science.gov (United States)

Lisboa, Kleber Marques; Marschewski, Julian; Ebejer, Neil; Ruch, Patrick; Cotta, Renato Machado; Michel, Bruno; Poulikakos, Dimos

2017-08-01

We propose a facile, novel concept of mass transfer enhancement in flow batteries based on electrolyte guidance in rationally designed corrugated channel systems. The proposed fluidic networks employ periodic throttling of the flow to optimally deflect the electrolytes into the porous electrode, targeting enhancement of the electrolyte-electrode interaction. Theoretical analysis is conducted with channels in the form of trapezoidal waves, confirming and detailing the mass transport enhancement mechanism. In dilute concentration experiments with an alkaline quinone redox chemistry, a scaling of the limiting current with Re0.74 is identified, which compares favourably against the Re0.33 scaling typical of diffusion-limited laminar processes. Experimental IR-corrected polarization curves are presented for high concentration conditions, and a significant performance improvement is observed with the narrowing of the nozzles. The adverse effects of periodic throttling on the pumping power are compared with the benefits in terms of power density, and an improvement of up to 102% in net power density is obtained in comparison with the flow-by case employing straight parallel channels. The proposed novel concept of corrugated fluidic networks comes with facile fabrication and contributes to the improvement of the transport characteristics and overall performance of redox flow battery systems.

Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

Science.gov (United States)

Pertsev, N. A.; Zembilgotov, A. G.; Waser, R.

1998-08-01

The effective dielectric, piezoelectric, and elastic constants of polycrystalline ferroelectric materials are calculated from single-crystal data by an advanced method of effective medium, which takes into account the piezoelectric interactions between grains in full measure. For bulk BaTiO3 and PbTiO3 polarized ceramics, the dependences of material constants on the remanent polarization are reported. Dielectric and elastic constants are computed also for unpolarized c- and a-textured ferroelectric thin films deposited on cubic or amorphous substrates. It is found that the dielectric properties of BaTiO3 and PbTiO3 polycrystalline thin films strongly depend on the type of crystal texture. The influence of two-dimensional clamping by the substrate on the dielectric and piezoelectric responses of polarized films is described quantitatively and shown to be especially important for the piezoelectric charge coefficient of BaTiO3 films.

Self-organized broadband light trapping in thin film amorphous silicon solar cells.

Science.gov (United States)

Martella, C; Chiappe, D; Delli Veneri, P; Mercaldo, L V; Usatii, I; Buatier de Mongeot, F

2013-06-07

Nanostructured glass substrates endowed with high aspect ratio one-dimensional corrugations are prepared by defocused ion beam erosion through a self-organized gold (Au) stencil mask. The shielding action of the stencil mask is amplified by co-deposition of gold atoms during ion bombardment. The resulting glass nanostructures enable broadband anti-reflection functionality and at the same time ensure a high efficiency for diffuse light scattering (Haze). It is demonstrated that the patterned glass substrates exhibit a better photon harvesting than the flat glass substrate in p-i-n type thin film a-Si:H solar cells.

Simulation and analysis on ultrasonic testing for the cement grouting defects of the corrugated pipe

Energy Technology Data Exchange (ETDEWEB)

Qingbang, Han; Ling, Chen; Changping, Zhu [Changzhou Key Laboratory of Sensor Networks and Environmental Sensing, College of IOT, Hohai University Changzhou, Jiangsu, 213022 (China)

2014-02-18

The defects exist in the cement grouting process of prestressed corrugated pipe may directly impair the bridge safety. In this paper, sound fields propagation in concrete structures with corrugated pipes and the influence of various different defects are simulated and analyzed using finite element method. The simulation results demonstrate a much complex propagation characteristic due to multiple reflection, refraction and scattering, where the scattering signals caused by metal are very strong, while the signals scattered by an air bubble are weaker. The influence of defect both in time and frequency domain are found through deconvolution treatment. In the time domain, the deconvolution signals correspond to larger defect display a larger head wave amplitude and shorter arrive time than those of smaller defects; in the frequency domain, larger defect also shows a stronger amplitude, lower center frequency and lower cutoff frequency.

Simulation and analysis on ultrasonic testing for the cement grouting defects of the corrugated pipe

International Nuclear Information System (INIS)

Qingbang, Han; Ling, Chen; Changping, Zhu

2014-01-01

The defects exist in the cement grouting process of prestressed corrugated pipe may directly impair the bridge safety. In this paper, sound fields propagation in concrete structures with corrugated pipes and the influence of various different defects are simulated and analyzed using finite element method. The simulation results demonstrate a much complex propagation characteristic due to multiple reflection, refraction and scattering, where the scattering signals caused by metal are very strong, while the signals scattered by an air bubble are weaker. The influence of defect both in time and frequency domain are found through deconvolution treatment. In the time domain, the deconvolution signals correspond to larger defect display a larger head wave amplitude and shorter arrive time than those of smaller defects; in the frequency domain, larger defect also shows a stronger amplitude, lower center frequency and lower cutoff frequency

Corrugated structure insertion for extending the SASE bandwidth up to 3% at the European XFEL

International Nuclear Information System (INIS)

Zagorodnov, I.; Feng, G.; Limberg, T.

2016-07-01

The usage of X-ray free electron laser (XFEL) in femtosecond nanocrystallography involves sequential illumination of many small crystals of arbitrary orientation. Hence a wide radiation bandwidth will be useful in order to obtain and to index a larger number of Bragg peaks used for determination of the crystal orientation. Considering the baseline configuration of the European XFEL in Hamburg, and based on beam dynamics simulations, we demonstrate here that the usage of corrugated structures allows for a considerable increase in radiation bandwidth. Data collection with a 3% bandwidth, a few microjoule radiation pulse energy, a few femtosecond pulse duration, and a photon energy of 5.4 keV is possible. For this study we have developed an analytical modal representation of the short-range wake function of the flat corrugated structures for arbitrary offsets of the source and the witness particles.

Corrugated structure insertion for extending the SASE bandwidth up to 3% at the European XFEL

Energy Technology Data Exchange (ETDEWEB)

Zagorodnov, I.; Feng, G.; Limberg, T.

2016-07-15

The usage of X-ray free electron laser (XFEL) in femtosecond nanocrystallography involves sequential illumination of many small crystals of arbitrary orientation. Hence a wide radiation bandwidth will be useful in order to obtain and to index a larger number of Bragg peaks used for determination of the crystal orientation. Considering the baseline configuration of the European XFEL in Hamburg, and based on beam dynamics simulations, we demonstrate here that the usage of corrugated structures allows for a considerable increase in radiation bandwidth. Data collection with a 3% bandwidth, a few microjoule radiation pulse energy, a few femtosecond pulse duration, and a photon energy of 5.4 keV is possible. For this study we have developed an analytical modal representation of the short-range wake function of the flat corrugated structures for arbitrary offsets of the source and the witness particles.

Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

Energy Technology Data Exchange (ETDEWEB)

James, K. K.; Satish, B.; Jayaraj, M. K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala (India)

2014-01-28

Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library

International Nuclear Information System (INIS)

Liu Guozhen; Wolfman, Jerome; Autret-Lambert, Cecile; Sakai, Joe; Roger, Sylvain; Gervais, Monique; Gervais, Francois

2010-01-01

Epitaxial growth of Ba 0.6 Sr 0.4 Ti 1-x Zr x O 3 (0≤x≤0.3) composition spread thin film library on SrRuO 3 /SrTiO 3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure, and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations in the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.

Characterization of low-frequency acoustic wave propagation through a periodic corrugated waveguide

Science.gov (United States)

Jiang, Changyong; Huang, Lixi

2018-03-01

In this paper, a periodic corrugated waveguide structure is proposed, and its unit-cell is analyzed by the wave finite element method. In low-frequency range, the unit-cell is treated as an equivalent fluid through a homogenization process, and the equivalent acoustic parameters are obtained, which are validated by finite structure simulations and experiments. The proposed structure is shown to add tortuosity to the waveguide, hence higher equivalent fluid density is achieved, while the system elastic modulus remains unchanged. As a result, the equivalent speed of sound is smaller than normal air. The application of such change of speed of sound is demonstrated in the classic quarter-wavelength resonator based on the corrugated waveguide, which gives a lower resonance frequency with the same side branch length. When the waveguide is filled with porous materials, the added tortuosity enhances the broadband, low-frequency sound absorption by increasing the equivalent mass without bringing in excess damping, the latter being partly responsible for the poor performance of usual porous materials in the low-frequency region. Therefore, the proposed structure provides another dimension for the design and optimization of porous sound absorption materials.

Poly(vinyl acetate)/clay nanocomposite materials for organic thin film transistor application.

Science.gov (United States)

Park, B J; Sung, J H; Park, J H; Choi, J S; Choi, H J

2008-05-01

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

Science.gov (United States)

Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.