Deposition of thin layer (monoatomic layer) of barium on gold single crystal surfaces and studies of its oxidation employing X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ahmad, H.; Ahmad, R.; Khalid, M.; Alvi, R.A.

2007-01-01

Due to the high reactivity of barium with oxygen, some oxygen diffuse into the bulk to form bulk oxide and it is very difficult to differentiate the oxide over layer and the bulk oxide. To study the oxidation of barium surface layer, a thin layer (monolayer) of barium is developed over gold single crystal surface. Gold is selected as support because it is one of the least reactive metal in transition metal group and have very low probability of reaction with oxygen at room temperature (300K). Nitrous oxide (N/sub 2/O) was used as oxidant. Thin layer of barium was deposited on Au(100) surface. The barium coverage on gold surface was calculated that varied from 0.4 to 1.4 monolayer (ML). Photoelectron spectra for O(ls), N(ls), Ba (3d), and Au (4f) have been recorded on X-ray photoelectron spectrometer at different binding energy region specific for each element. The decomposition of nitrous oxide has been observed in all cases. It has found that nitrogen is evolved in the gaseous state and oxygen is adsorbed/chemisorbed on barium over layer. (author)

Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

International Nuclear Information System (INIS)

Brendt, Jochen

2011-01-01

Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

International Nuclear Information System (INIS)

Pichon, L; Rogel, R; Demami, F

2010-01-01

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Observation of distinct, temperature dependent flux noise near bicrystal grain boundaries in YBa2Cu3O7-x films

DEFF Research Database (Denmark)

Bukh, K. R.; Jacobsen, Claus Schelde; Hansen, Jørn Bindslev

2000-01-01

The characteristics of the magnetic flux noise in high temperature superconducting thin-films of yttrium-barium-copper-oxide (YBa2Cu3O7) in the vicinity of artificial grain boundaries have been studied by means of a low critical temperature superconducting quantum interference device (SQUID...

solution growth and characterization of copper oxide thin films ...

African Journals Online (AJOL)

Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Directory of Open Access Journals (Sweden)

Sheng-Po Chang

2012-01-01

Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

International Nuclear Information System (INIS)

Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

2013-01-01

Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

Method of forming an oxide superconducting thin film having an R1A2C3 crystalline phase over an R2A1C1 crystalline phase

International Nuclear Information System (INIS)

Lelental, M.; Romanofsky, H.J.

1992-01-01

This patent describes a process which comprises forming a mixed rare earth alkaline earth copper oxide layer on a substrate and converting the mixed rare earth alkaline earth copper oxide layer to an electrically conductive layer. It comprises crystalline R 1 A 2 C 3 oxide phase by heating in the presence of oxygen, wherein rare earth and R is in each instance chosen from among yttrium, lanthanum, samarium, europium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium and alkaline earth and A is in each instance chosen from among calcium, strontium and barium, characterized in that a crystalline R 2 A 1 C 1 oxide phase is first formed as a layer on the substrate and the crystalline R 1 A 2 C 3 oxide phase is formed over the crystalline R 2 A 1 C 1 oxide phase by coating a mixed rare earth alkaline earth copper oxide on the crystalline R 2 A 1 C 1 oxide phase and heating the mixed rare earth alkaline earth copper oxide to a temperature of at least 1000 degrees C

Methods of making a high dielectric constant, resistive phase of YBa2Cu3OX and methods of using the same

International Nuclear Information System (INIS)

Testardi, L.R.

1991-01-01

This patent describes an electrical device. It comprises a dielectric material configured so as to have a pair of opposite sides, the dielectric material comprising a high dielectric constant, high electrical resistivity material phase of yttrium barium copper oxide obtained by heating the yttrium barium copper oxide to at least about 850 degrees Celsius and then quenching the yttrium barium copper oxide from the at least about 850 degrees Celsius at a sufficiently rapid rate so as to produce the high dielectric constant, high electrical resistivity material phase in the yttrium barium copper oxide; a first plate means for storing electrical charge provided on a first one of the pair of opposite sides of the dielectric material; a second plate means for storing electrical charge provided on a second one of the pair of opposite sides of the dielectric material; a first lead means adjacent to and in electrical contact with the first plate means for permitting electrical contact to the first plate means; and a second lead means adjacent to and in electrical contact with the second plate means for permitting electrical contact to the second plate means; wherein the electrical device is a capacitor having a useful, desired capacitance and is adapted to be used in diverse electrical and electronic applications for the storage of electrical charge

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

International Nuclear Information System (INIS)

Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

2012-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Characterization of photoluminescent europium doped yttrium oxide thin-films prepared by metallorganic chemical vapor deposition

International Nuclear Information System (INIS)

McKittrick, J.; Bacalski, C.F.; Hirata, G.A.; Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M.

1998-01-01

Europium doped yttrium oxide, (Y 1-x Eu x ) 2 O 3 , thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y 2 O 3 , grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y 2 O 3 :Eu 3+ was observed in x-ray diffraction for deposition temperatures ≥600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra

An easily sintered, chemically stable, barium zirconate-based proton conductor for high-performance proton-conducting solid oxide fuel cells

KAUST Repository

Sun, Wenping; Shi, Zhen; Liu, Mingfei; Bi, Lei; Liu, Wei

2014-01-01

Yttrium and indium co-doped barium zirconate is investigated to develop a chemically stable and sintering active proton conductor for solid oxide fuel cells (SOFCs). BaZr0.8Y0.2-xInxO3- δ possesses a pure cubic perovskite structure. The sintering

Powder of a copper oxide superconductor precursor, fabrication process and use for the preparation of superconducting oxide

International Nuclear Information System (INIS)

Dehaudt, P.

1990-01-01

The precursor powder comprises at least a copper compound (hydroxide, oxide and hydroxynitrates), at least a rare earth and/or yttrium compound (nitrates, hydroxides and hydroxynitrates) or bismuth oxide and at least an alkaline earth nitrate. It can be prepared by atomization drying of a suspension a copper precipitate or coprecipitate and other elements of the superconducting oxide in solution [fr

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

International Nuclear Information System (INIS)

Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

2001-01-01

We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD; Variation von Kristallinitaet und Stoechiometrie in mittels PLD hergestellten Schichten aus Galliumoxid, Galliumnitrid und Bariumzirkonat

Energy Technology Data Exchange (ETDEWEB)

Brendt, Jochen

2011-08-05

Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

Synthesis and physicochemical investigation of complexes of rare earth, alkaline earth elements and copper with some β-diketones

International Nuclear Information System (INIS)

Nichiporuk, R.V.; Pechurova, N.I.; Snezhko, N.I.; Martynenko, L.I.; Kaul', A.R.; Zanina, A.S.; Shergina, S.I.; Sokolov, I.E.

1991-01-01

Complexes of rare earth, alkaline earth elements and copper with 2-methoxy-2,6,6-trimethylheptanedion-3,5 as well as complexes of yttrium and barium with 2-methoxy-2,6-dimethylheptanedion-3,5 were synthesized. Prepared complexes were investigated by the methods of chemical, thermal, X-ray phase analyses, IR spectroscopy. Complex sublimation was studied at 10 -1 -10 -2 mm Hg. Complexes of rare earths and copper don't change their composition during sublimation, and sublimation of hydrated complexes of barium, strontium and calcium leads to formation of anhydrous complexes. All prepared complexes are able to transsublimate multiply and qualitatively without change of composition. All isolated complexes can be used for preparation of film oxide coatings by CVD method

Incorporation of self-organised gold nano crystals in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films: Modification of superconducting properties

Energy Technology Data Exchange (ETDEWEB)

Katzer, Christian; Michalowski, Peter; Westerhausen, Markus; Koch, Stefanie; Schmidl, Frank; Seidel, Paul [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Helmholtzweg 5, 07743 Jena (Germany); Treiber, Sebastian [Max-Planck-Institut fuer Intelligente Systeme, Heisenbergstrasse 3, 70569 Stuttgart (Germany); Albrecht, Joachim [Hochschule Aalen, Beethovenstrasse 1, 73430 Aalen (Germany)

2012-07-01

Using pulsed laser deposition we are able to fabricate and examine Yttrium-Barium-Copper-Oxide (YBCO) thin films of high quality. A particular point of interest thereby is the influence of a pre-deposited gold layer with a well-defined film thickness. During the growth of the YBCO thin film the intermediate gold layer self assembles into crystalline nano particles, which modify the growth conditions and hence the physical properties of the growing YBCO. We report on the modification of structural and superconducting properties of our YBCO thin films (such as rocking curve widths, critical temperature T{sub c} and critical current density j{sub c}) comparing conventional to Au added YBCO. The temperature dependence of the critical current density thereby was determined using transport measurements as well as magneto-optical measurements. Furthermore investigations of the flux noise of our gold modified YBCO films are presented.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Energy Technology Data Exchange (ETDEWEB)

Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

2016-12-15

Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

International Nuclear Information System (INIS)

Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

2013-01-01

We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Directory of Open Access Journals (Sweden)

Imas Noviyana

2017-06-01

Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

NARCIS (Netherlands)

Nag, M.; Muller, R.N.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, Abhishek; Gelinck, G.H.; Fukui, Y.; Groeseneken, G.; Heremans, P.

2015-01-01

We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

KAUST Repository

Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

On barium oxide solubility in barium-containing chloride melts

International Nuclear Information System (INIS)

Nikolaeva, Elena V.; Zakiryanova, Irina D.; Bovet, Andrey L.; Korzun, Iraida V.

2016-01-01

Oxide solubility in chloride melts depends on temperature and composition of molten solvent. The solubility of barium oxide in the solvents with barium chloride content is essentially higher than that in molten alkali chlorides. Spectral data demonstrate the existence of oxychloride ionic groupings in such melts. This work presents the results of the BaO solubility in two molten BaCl 2 -NaCl systems with different barium chloride content. The received data together with earlier published results revealed the main regularities of BaO solubility in molten BaO-BaCl 2 -MCl systems.

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

International Nuclear Information System (INIS)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

2014-01-01

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

International Nuclear Information System (INIS)

Park, Joon Seok; Maeng, Wan-Joo; Kim, Hyun-Suk; Park, Jin-Seong

2012-01-01

The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First, an overview is provided on how electrical performance may be enhanced by the adoption of specific device structures and process schemes, the combination of various oxide semiconductor materials, and the appropriate selection of gate dielectrics and electrode metals in contact with the semiconductor. As metal oxide TFT devices are excellent candidates for switching or driving transistors in next generation active matrix liquid crystal displays (AMLCD) or active matrix organic light emitting diode (AMOLED) displays, the major parameters of interest in the electrical characteristics involve the field effect mobility (μ FE ), threshold voltage (V th ), and subthreshold swing (SS). A study of the stability of amorphous oxide TFT devices is presented next. Switching or driving transistors in AMLCD or AMOLED displays inevitably involves voltage bias or constant current stress upon prolonged operation, and in this regard many research groups have examined and proposed device degradation mechanisms under various stress conditions. The most recent studies involve stress experiments in the presence of visible light irradiating the semiconductor, and different degradation mechanisms have been proposed with respect to photon radiation. The last part of this review consists of a description of methods other than conventional vacuum deposition techniques regarding the formation of oxide semiconductor films, along with some potential application fields including flexible displays and information storage.

Thermoanalytical study of the decomposition of yttrium trifluoroacetate thin films

International Nuclear Information System (INIS)

Eloussifi, H.; Farjas, J.; Roura, P.; Ricart, S.; Puig, T.; Obradors, X.; Dammak, M.

2013-01-01

We present the use of the thermal analysis techniques to study yttrium trifluoroacetate thin films decomposition. In situ analysis was done by means of thermogravimetry, differential thermal analysis, and evolved gas analysis. Solid residues at different stages and the final product have been characterized by X-ray diffraction and scanning electron microscopy. The thermal decomposition of yttrium trifluoroacetate thin films results in the formation of yttria and presents the same succession of intermediates than powder's decomposition, however, yttria and all intermediates but YF 3 appear at significantly lower temperatures. We also observe a dependence on the water partial pressure that was not observed in the decomposition of yttrium trifluoroacetate powders. Finally, a dependence on the substrate chemical composition is discerned. - Highlights: • Thermal decomposition of yttrium trifluoroacetate films. • Very different behavior of films with respect to powders. • Decomposition is enhanced in films. • Application of thermal analysis to chemical solution deposition synthesis of films

Optical constants and band edge of amorphous zinc oxide thin films

International Nuclear Information System (INIS)

Khoshman, Jebreel M.; Kordesch, Martin E.

2007-01-01

The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Science.gov (United States)

Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

2016-12-01

Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

Yttrium 3-(4-nitrophenyl)-2-propenoate used as inhibitor against copper alloy corrosion in 0.1 M NaCl solution

International Nuclear Information System (INIS)

Nam, Nguyen Dang; Thang, Vo Quoc; Hoai, Nguyen To; Hien, Pham Van

2016-01-01

Highlights: • Yttrium 3-(4-nitrophenyl)-2-propenoate has been studied as an effective corrosion inhibitor for copper. • A high inhibition performance is attributed to the forming protective inhibiting deposits. • Yttrium 3-(4-nitrophenyl)-2-propenoate mitigates corrosion by promoting random distribution of minor anodes. - Abstract: Yttrium 3-(4-nitrophenyl)-2-propenoate has been studied as an effective corrosion inhibitor for copper alloy in 0.1 M chloride solution. The results show that the surface of copper alloy coupons exposed to solutions containing 0.45 mM yttrium 3-(4-nitrophenyl)-2-propenoate had no signs of corrosion attack due to protective film formation, whereas the surface of copper alloy coupons exposed to non-inhibitor and lower concentrations of yttrium 3-(4-nitrophenyl)-2-propenoate containing solutions were severely corroded. A high inhibition performance is attributed to the forming protective inhibiting deposits that slow down the electrochemical corrosion reactions and mitigate corrosion by promoting random distribution of minor anodes.

Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

He, Shutong [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Amoruso, Salvatore [Dipartimento di Fisica, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Pang, Dongqing; Wang, Chingyue; Hu, Minglie, E-mail: huminglie@tju.edu.cn [Ultrafast Laser Laboratory, Key Laboratory of Opto-Electronic Information Technical Science of Ministry of Education, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China)

2016-04-28

We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu{sub 2}O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, t{sub w}, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on t{sub w} is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu{sub 2}O nanoparticles (size of ≈20 nm) and Cu{sub 2}O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation.

Studies on yttrium oxide coatings for corrosion protection against molten uranium

International Nuclear Information System (INIS)

Chakravarthy, Y.; Bhandari, Subhankar; Pragatheeswaran; Thiyagarajan, T.K.; Ananthapadmanabhan, P.V.; Das, A.K.; Kumar, Jay; Kutty, T.R.G.

2012-01-01

Yttrium oxide is resistant to corrosion by molten uranium and its alloys. Yttrium oxide is recommended as a protective oxide layer on graphite and metal components used for melting and processing uranium and its alloys. This paper presents studies on the efficacy of plasma sprayed yttrium oxide coatings for barrier applications against molten uranium

A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide

Energy Technology Data Exchange (ETDEWEB)

Isherwood, Patrick J. M., E-mail: P.J.M.Isherwood@lboro.ac.uk; Walls, John M. [CREST, School of Electronic, Electrical and Systems Engineering, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Butler, Keith T.; Walsh, Aron [Centre for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

2015-09-14

The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO{sub 2}. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

Properties of Spray Pyrolysied Copper Oxide Thin Films

Directory of Open Access Journals (Sweden)

S. S. Roy

2017-02-01

Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

Extension to AC Loss Minimisation in High Temperature Superconductors

National Research Council Canada - National Science Library

Campbell, Archie

2004-01-01

...: (a) Measure the AC losses of appropriate Yttrium Barium Copper Oxide (YBCO) samples with strong potential for minimizing losses at high frequencies and magnetic fields with the existing equipment. (b...

Crystallization and deuterium permeation behaviors of yttrium oxide coating prepared by metal organic decomposition

Directory of Open Access Journals (Sweden)

Takumi Chikada

2016-12-01

Full Text Available Yttrium oxide coatings were fabricated on reduced activation ferritic/martensitic steels by metal organic decomposition with a dip-coating technique, and their deuterium permeation behaviors were investigated. The microstructure of the coatings varied with heat-treatment temperature: amorphous at 670ºC (amorphous coating and crystallized at 700ºC (crystallized coating. Deuterium permeation flux of the amorphous coating was lower than the uncoated steel by a factor of 5 at 500ºC, while that of the crystallized coating was lower by a factor of around 100 at 400‒550ºC. The permeation fluxes of both coatings were drastically decreased during the measurements at higher temperatures by a factor of up to 790 for the amorphous coating and 1000 for the crystallized one, indicating a microstructure modification occurred by an effect of test temperature with hydrogen flux. Temperature dependence of deuterium diffusivity in the coatings suggests that the decrease of the permeation flux has been derived from a decrease of the diffusivity. Characteristic permeation behaviors were observed with different annealing conditions; however, they can be interpreted using the permeation mechanism clarified in the previous erbium oxide coating studies.

Microstructure of thin film platinum electrodes on yttrium stabilized zirconia prepared by sputter deposition

Energy Technology Data Exchange (ETDEWEB)

Toghan, Arafat, E-mail: arafat.toghan@pci.uni-hannover.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany); Khodari, M. [Chemistry Department, Faculty of Science, South Valley University, Qena, 83523 (Egypt); Steinbach, F.; Imbihl, R. [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany)

2011-09-01

(111) oriented thin film Pt electrodes were prepared on single crystals of yttrium-stabilized zirconia (YSZ) by sputter deposition of platinum. The electrodes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDX), atomic force microscopy (AFM) and by profilometry. SEM images of the as-sputtered platinum film show a compact amorphous Pt film covering uniformly the substrate. Upon annealing at 1123 K, gaps and pores at the interface develop leading to a partial dewetting of the Pt film. Increasing the annealing temperature to 1373 K transforms the polycrystalline Pt film into single crystalline grains exhibiting a (111) orientation towards the substrate.

Barium borate nanorod decorated reduced graphene oxide for optical power limiting applications

Science.gov (United States)

Muruganandi, G.; Saravanan, M.; Vinitha, G.; Jessie Raj, M. B.; Sabari Girisun, T. C.

2018-01-01

By simple hydrothermal method, nanorods of barium boate were successfully loaded on reduced graphene oxide sheets. Powder XRD confirms the incorporation of barium borate (2θ = 29°, (202)) along with the transition of graphene oxide (2θ = 12°, (001)) into reduced graphene oxide (2θ = 25°, (002)). In the FTIR spectra, presence of characteristic absorption peaks of rGO (1572 and 2928 cm-1) and barium borate (510, 760 and 856 cm-1) further evidences the formation of BBO:rGO nanocomposite. FESEM images potray the existence of graphene sheets as thin layers and growth of barium borate as nanorods on the sheets of reduced graphene oxide. Ground state absorption studies reveal the hypsochromic shift in the absorption maxima of the graphene layers due to reduction of graphene oxide and hypochromic shift in the absorbance intensity due to the inclusion of highly transparent barium bortae. The photoluminescence of BBO:rGO shows maximum emission in the UV region arising from the direct transitions involving the valence band and conduction band in the band gap region. Z-scan technique using CW diode pumped Nd:YAG laser (532 nm, 50 mW) exposes that both nanocomposite and individual counterpart possess saturable absorption and self-defocusing behavior. Third-order nonlinear optical coefficients of BBO:rGO nanocomposite is found to be higher than bare graphene oxide. In particular the nonlinear refractive index of nanocomposite is almost four times higher than GO which resulted in superior optical power limiting action. Strong nonlinear refraction (self-defocusing) and lower onset limiting thershold makes the BBO:rGO nanocomposite preferable candidate for laser safety devices.

Preparation of a calcium-substituted copper-rich yttrium barium copper oxide superconductor from a spray-dried nitrate precursor

International Nuclear Information System (INIS)

Gyurov, G.; Khristova, I.; Peshev, P.; Abrashev, M.V.

1993-01-01

A calcium-substituted YBa 2 Cu 4 O 8 (1-2-4) high-temperature superconductor is synthesized from a precursor obtained by spray-drying of a nitrate solution containing the corresponding metals in a stoichiometric ratio. The synthesis takes place during one-stage heat-treatment of the precursor at 800 C in an oxygen flow under a pressure of 1 atm within a relatively short period of time, additives as well as intermediate grinding and pressing of the products being not needed. Measurements of the a.c. susceptibility have revealed a very sharp superconducting transition which is comparable with that of samples prepared under a high pressure. The transition in Ca-substituted YBa 2 Cu 4 O 8 occurs at a temperature by about 8 K higher than T c of the Ca-free phase. Raman spectra suggest that during the substitution calcium does not occupy barium positions in the YBa 2 Cu 4 O 8 lattice

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Energy Technology Data Exchange (ETDEWEB)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

2015-08-17

We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

KAUST Repository

Nayak, Pradipta K.

2013-05-08

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

APPLICATION OF SPHEROIDIZING «CHIPS»-MASTER ALLOY ON COPPER BASE CONTAINING NANOSCALE PARTICLES OF YTTRIUM OXIDE FOR HIGH-STRENGTH CAST IRON

Directory of Open Access Journals (Sweden)

A. S. Kalinichenko

2016-01-01

Full Text Available The peculiarity of the technology of obtaining high-strength cast iron is application in out-furnace treatment various inoculants containing magnesium. In practice of foundry production spheroidizing master alloys based on ferrosilicon (Fe-Si-Mg type and «heavy» alloying alloys on copper and nickel base are widespread. The urgent issue is to improve their efficiency by increasing the degree of magnesium assimilation, reduction of specific consumption of additives, and minimizing dust and gas emissions during the process of spheroidizing treatment of liquid iron. One method of solving this problem is the use of inoculants in a compact form in which the process of dissolution proceeds more efficiently. For example, rapidly quenched granules or «chip»-inoculants are interesting to apply.The aim of present work was to study the peculiarities of production and application of «Chips»-inoculants on copper and magnesium base with additions of yttrium oxide. The principle of mechatronics was used, including the briquetting inoculants’ components after their mixing with the subsequent high-speed mechanical impact and obtaining plates with a thickness of 1–2 mm.Spheroidizing treatment of molten metal has been produced by ladle method using «Chips»-inoculants in the amount of 0.8%. Secondary graphitization inoculation was not performed. Studies have shown that when the spheroidizing treatment of ductile iron was performed with inoculants developed, the process of interaction of magnesium with the liquid melt runs steadily without significant pyroeffect and emissions of metal outside of the ladle.This generates a structure of spheroidal graphite of regular shape (SGf5. The presence in the inoculant of yttrium oxide has a positive impact on the spheroidal graphite counts and the tendency of high-strength cast iron to form «white» cast iron structure. Mechanical properties of the obtained alloy correspond to high-strength cast iron HSCI60.

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

Science.gov (United States)

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Effect of yttrium on the oxide scale adherence of pre-oxidized silicon-containing heat-resistant alloy

International Nuclear Information System (INIS)

Yan Jingbo; Gao Yimin; Shen Yudi; Yang Fang; Yi Dawei; Ye Zhaozhong; Liang Long; Du Yingqian

2011-01-01

Highlights: → AE experiment shows yttrium has a beneficial effect on the pre-oxidized HP40 alloy. → Yttrium facilitates the formation of internal oxide after 10 h of oxidation. → Internal oxide changes the rupture behaviour of the oxide scale. → Twins form in the internal oxide and improve the binding strength of the scale. - Abstract: This paper investigates the effect of the rare earth element yttrium on the rupture behaviour of the oxide scale on the silicon-containing heat-resistant alloy during cooling. After 10 h of oxidation, yttrium is found to facilitate the formation of internal oxides (silica) at the scale-matrix interface. Due to the twinning observed by scanning transmission electron microscopy (STEM) in silica, the critical strain value for the scale failure can be dramatically improved, and the formation of cracks at the scale-matrix interface is inhibited.

Critical current densities in thick yttrium-barium cuprate (1-2-3) films

International Nuclear Information System (INIS)

Ryvkina, G.G.; Gorlanov, S.F.; Vedernikov, G.E.; Telegin, A.B.; Ryabin, V.A.; Khodos, M.Ya.

1993-01-01

The study of critical current densities j c of oxide superconductors and their thick films is a very important practical task because the value of j c is one of the main criteria for their utilization in modern cryoelectronics. For most devices based on the Josephson effect, the value of j c ∼ 10 2 - 10 3 A/cm 2 is acceptable, which is easily attainable for polycrystalline thick films obtained by stenciling. The study of the current-transport phenomenon involves a number of difficulties, especially for direct current, because both the sample itself and the lead-in contacts are resistance-heated during the measurements, which, in turn, results in lower values of the j c . Measurements with pulsed currents allow one to lower the power that is applied to the sample; the heat that is released in the sample is reduced, in comparison to measurements with direct current, by a factor of the pulsed-current duty cycle. In addition, measurements with direct current detects only the appearance of resistance; it provides no information on the rest of the transition from the normal to the superconductive state, i.e., on the so-called 'tail' of the transition. In this work, the authors studied critical current densities of thick HTSC yttrium-barium cuprate films of the 1-2-3 composition using pulsed current

Size-dependent cytotoxicity of yttrium oxide nanoparticles on primary osteoblasts in vitro

Energy Technology Data Exchange (ETDEWEB)

Zhou, Guoqiang, E-mail: zhougq1982@163.com; Li, Yunfei; Ma, Yanyan; Liu, Zhu; Cao, Lili; Wang, Da; Liu, Sudan; Xu, Wenshi; Wang, Wenying [Hebei University, Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of Ministry of Education, Key Laboratory of Chemical Biology of Hebei Province, College of Chemistry and Environmental Science (China)

2016-05-15

Yttrium oxide nanoparticles are an excellent host material for the rare earth metals and have high luminescence efficiency providing a potential application in photodynamic therapy and biological imaging. In this study, the effects of yttrium oxide nanoparticles with four different sizes were investigated using primary osteoblasts in vitro. The results demonstrated that the cytotoxicity generated by yttrium oxide nanoparticles depended on the particle size, and smaller particles possessed higher toxicological effects. For the purpose to elucidate the relationship between reactive oxygen species generation and cell damage, cytomembrane integrity, intracellular reactive oxygen species level, mitochondrial membrane potential, cell apoptosis rate, and activity of caspase-3 in cells were then measured. Increased reactive oxygen species level was also observed in a size-dependent way. Thus, our data demonstrated that exposure to yttrium oxide nanoparticles resulted in a size-dependent cytotoxicity in cultured primary osteoblasts, and reactive oxygen species generation should be one possible damage pathway for the toxicological effects produced by yttrium oxide particles. The results may provide useful information for more rational applications of yttrium oxide nanoparticles in the future.

Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

International Nuclear Information System (INIS)

Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

1982-01-01

A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

Spectrographic determination of strontium in yttrium-90 solutions

International Nuclear Information System (INIS)

Roca, M.; Capdevila, C.

1970-01-01

The copper spark method has been used for determining strontium in the concentration range 1-100 g/ml in yttrium-90 solutions containing 0,5 % or thereabouts of ammonium citrate. The influence of the citric acid as well as the ammonium citrate with regard to 2N HCL solutions has been studied: the citric acid enhances the line intensities of strontium. The employment of either barium or lanthanum as reference element compensates for this enhancement. Because of the increase in sensitivity mentioned above, the study of influence of the citric acid has been extended and several impurities usually determined in radioisotope solutions have been considered. (Author) 4 refs

Status and prospects on development of yttrium-based high-temperature superconducting coated conductor

International Nuclear Information System (INIS)

Izumi, Teruo; Yanagi, Nagato

2017-01-01

Development of a large-sized large-current conductor using a high-temperature superconducting wire rod based on copper oxide has been started worldwide for the purpose of applying it as an option of a magnet for a nuclear fusion prototype reactor. There is yttrium-based thin film wire rod as a promising candidate. Japan is leading the development of this wire rod for many years, aiming to apply it to power equipment and the like. This paper explained the history of wire rod development, basic superconducting properties and manufacturing method, and latest achievements, and overviewed the feasibility of application to nuclear fusion reactor magnets. At present, the use of niobium-based low-temperature superconducting wire rod that is used in ITER is the basic idea. On the other hand, the development of wire rod using a copper oxide type high-temperature superconductor (HTS) has also been started. HTS wire rod is evaluated as suitable for application to nuclear fusion magnets due to its superior critical current characteristics and high mechanical rigidity up to high magnetic fields at high temperatures of yttrium. As current development progress, there are development of high-quality wire rod in the magnetic field and development of low AC loss wire rod. As future prospects, cost reduction due to mass production and improvement of yield, and investigation of low-resistance connection technology are being studied. The remaining future challenges of yttrium-based HTS are improvement of the anisotropy, influence on neutron irradiation, and problem of activation. (A.O.)

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

Charge transport in amorphous InGaZnO thin-film transistors

NARCIS (Netherlands)

Germs, W.C.; Adriaans, W.H.; Tripathi, A.K.; Roelofs, W.S.C.; Cobb, B.; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

2012-01-01

We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=ΔV/ΔT) of a-IGZO in thin-film transistors as a function of charge-carrier density for different

Charge transport in amorphous InGaZnO thin film transistors

NARCIS (Netherlands)

Germs, W.C.; Adriaans, W.H.; Tripathi, A.K.; Roelofs, W.S.C.; Cobb, B.; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

2012-01-01

We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=¿V/¿T) of a-IGZO in thin-film transistors as a function of charge-carrier density for different

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

, ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

Indexes to Volume 81

Indian Academy of Sciences (India)

A benchmark study on uncertainty of ALICE ASH 1.0, TALYS 1.0 and MCNPX 2.6 ... Elastic scattering and fusion cross-sections in 7Li + 27Al reaction ... Characterization of pure and copper-doped iron tartrate crystals grown in silica gel ... Experimental study of yttrium barium copper oxide superconducting tape's critical.

Amorphous gallium oxide grown by low-temperature PECVD

KAUST Repository

Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aï cha; Dö beli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe

2018-01-01

demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband

a Positron Study of the Electronic Structure of Yttrium Barium Copper Oxide.

Science.gov (United States)

Haghighi, Hossein

The work described in this thesis is concerned with a study of the electronic structure of the high T _{c} superconductor YBa _2Cu_3O _7 using the technique of two dimensional angular correlation of annihilation radiation (2D-ACAR). We have studied this compound with a view to clarifying whether YBa_2Cu_3O _7 possess a Fermi surface. The numerous different theories that have been proposed to explain the superconductivity phase of these types of materials can be classified into two main groups. The theories in the first group assume the existence of a conventional Fermi fluid and Fermi surface. The alternative more exotic models do not require a Fermi surface but are based on the Mott-Hubbard model of strongly correlated charge and spin excitations. Prior to this work all 2D-ACAR studies of YBa _2Cu_3O _7 involved twinned crystals and modest statistics and little of significance was learned other than that, consistent with that of predictions of theory, the positron was preferentially annihilating on the copper-oxygen chains. The studies of untwinned crystals of YBa_2Cu _3O_7, herein described are of much higher statistics and resulted in one of the clearest imaginable manifestations of a Fermi surface in the form of an extended discontinuity in the measured momentum spectrum. This discontinuity is even more apparent in the LCW-folded spectrum with a form and profile in substantial agreement with the theoretical predictions of a Gamma-X electron ridge Fermi surface section arising from states in the Cu-O chains.

Heat conduction and thermal stabilization in YBCO tape

Indian Academy of Sciences (India)

Yttrium barium copper oxide (YBCO) based 2G/3G tech- nical superconductors ... off-normal scenarios, these superconductors do exceed in an irreversible fashion .... ler G 2007 Factory testing of a 36·5 MW high temperature superconducting ...

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly conductive grain boundaries in copper oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

2016-06-21

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

Experimental study of yttrium barium copper oxide superconducting ...

Indian Academy of Sciences (India)

Institute for Plasma Research, Near Indira Bridge, Bhat, Gandhinagar 382 428, India ... at 77 K. The degradation is largely attributed to the shear stress and torsional ... 2G high-temperature YBCO-coated conductor manufactured by American ...

Scandium, yttrium and the lanthanide metals

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

The hydroxide and oxide phases that exist for scandium(III) include scandium hydroxide, which likely has both amorphous and crystalline forms, ScOOH(s), and scandium oxide. This chapter presents the data selected for the stability constants of the polymeric hydrolysis species of scandium at zero ionic strength. The behaviour of yttrium, and the lanthanide metals, in the environment is largely dependent on their solution equilibria. Hydrolysis and other complexation reactions of yttrium and the lanthanide metals are important in the disposal of nuclear waste. The trivalent lanthanide metals include lanthanum(III) through lutetium(III). A number of studies have reported a tetrad effect for the geochemical behaviour of the lanthanide series, including stability constants and distribution coefficients. The solubility of many of the lanthanide hydroxide phases has been studied at fixed ionic strength. In studying the hydrolysis of cerium(IV), a number of studies have utilised oxidation-reduction reactions in determining the relevant stability constants.

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Energy Technology Data Exchange (ETDEWEB)

Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-01-27

We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

KAUST Repository

Islam, Md. Anisul

2016-03-10

In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased. © 2015 IEEE.

Ultra-low damping in lift-off structured yttrium iron garnet thin films

Science.gov (United States)

Krysztofik, A.; Coy, L. E.; Kuświk, P.; Załeski, K.; Głowiński, H.; Dubowik, J.

2017-11-01

We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition, and they exhibit high crystalline quality, low surface roughness, and the effective magnetization of 127 emu/cm3. The Gilbert damping parameter is as low as 5 ×10-4. The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties pave a path in the fabrication of high-quality magnonic circuits and oxide-based spintronic devices.

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

INFLUENCE OF BARIUM OXIDE ADDITIONS ON PORTLAND CLINKER

Directory of Open Access Journals (Sweden)

Anezka Zezulova

2016-12-01

Full Text Available Nowadays, nuclear power plants are widespread around the world and research is of great interest. Together with nuclear research, shielding of different types of radiation is an important current topic of research aiming at their safety. Portland cement has been an elementary building material for centuries. Since barium is very efficient in shielding different types of radiation, it can be assumed that the radiation shielding capability of cement can be improved by incorporation of barium. This work deals with the influence of barium oxide, added in the form of barium carbonate and sulphate, on the formation and properties of Portland clinker. The structure of burnt clinkers and the ratio of clinker phases were studied by polarizing microscopy and by X-ray diffraction. With increasing barium content, the alite-belite ratio decreases and the content of free lime gradually increases. Moreover, sulphates induce the growth of alite crystals. The ability of barium to be a part of the clinker minerals was observed by scanning electron microscopy. Belite and clinker melt contain the highest amount of barium, but aggregates of barium oxide are formed in the clinker melt. Furthermore, the rate of alite crystallization was studied under isothermal conditions.

Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

40 CFR 721.10010 - Barium manganese oxide (BaMnO3).

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Barium manganese oxide (BaMnO3). 721... Substances § 721.10010 Barium manganese oxide (BaMnO3). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as barium manganese oxide (BaMnO3) (PMN P-00...

Elaboration and characterisation of yttrium oxide and hafnium oxide powders by the sol-gel process

International Nuclear Information System (INIS)

Hours, T.

1988-01-01

The two classical sol-gel processes, colloidal and polymeric are studied for the preparation of yttrium oxide and hafnium oxide high performance powders. In the colloidal process, controlled and reproducible conditions for the preparation of yttrium oxide and hafnium oxide sols from salts or alkoxides are developed and the hydrothermal synthesis monodisperse hafnium oxide colloids is studied. The polymeric process is studied with hafnium ethyl-hexylate, hydrolysis kinetics for controlled preparation of sols and gels is investigated. Each step of preparation is detailed and powders obtained are characterized [fr

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

International Nuclear Information System (INIS)

Zhao, J.; Noh, D.W.; Chern, C.; Li, Y.Q.; Norris, P.E.; Kear, B.; Gallois, B.

1991-01-01

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology

Conduction mechanism in amorphous InGaZnO thin film transistors

NARCIS (Netherlands)

Bhoolokam, A.; Nag, M.; Steudel, S.; Genoe, J.; Gelinck, G.; Kadashchuk, A.; Groeseneken, G.; Heremans, P.

2016-01-01

We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is

An RBS study of thin PLD and MOCVD strontium copper oxide layers

Energy Technology Data Exchange (ETDEWEB)

Kantor, Z. [Institute of Physics, University of Pannonia, H-8200 Veszprem (Hungary); Papadopoulou, E.L.; Aperathitis, E. [Inst. Electronic Struture and Laser, Foundation for Research and Technology - Hellas, P.O. Box 1527, Heraklion 71110 (Greece); Deschanvres, J.-L. [LMPG INP Grenoble-Minatec, BP 257, 38016 Grenoble Cedex 1 (France); Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

2008-09-30

Strontium copper oxide (SCO) has been studied as p-type transparent (VIS) conductive oxide material. Also theoretical studies suggested p-type conductivity of the SrCu{sub 2}O{sub 2} composition. SCO thin layers, with thicknesses of 30-2000 nm, were deposited on glass and silicon substrates both by pulsed laser deposition (PLD) and by MOCVD method. The as-grown layers showed high electrical resistance. Due to an annealing process, the resistivity significantly decreased and the layers showed p-type conductivity. Optical transparency measured on samples grown on glass substrates was found about or above 80%, including also thickness dependence. RBS measurements were applied for the determination of the chemical composition profile of the layers. A comparison revealed some specific differences between as-grown and annealed PLD samples. Due to the annealing, the ratio of oxide phases was changed and a vertical inhomogeneity in chemical composition was observed. Our measurements revealed also the influence of the deposition technique and of the substrate.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

Science.gov (United States)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

40 CFR 721.10011 - Barium calcium manganese strontium oxide.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Barium calcium manganese strontium... Specific Chemical Substances § 721.10011 Barium calcium manganese strontium oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as barium calcium...

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Science.gov (United States)

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Interaction at interface between superconducting yttrium ceramics and copper or niobium

International Nuclear Information System (INIS)

Karpov, M.I.; Korzhov, V.P.; Medved', N.V.; Myshlyaeva, M.M.

1992-01-01

Light metallography, scanning electron microscopy and local energy dispersion analysis have been used to study the interaction of Y-ceramics with copper and niobium. Samples in the form of wire of two types were employed, that is, consisting of ceramic core YBaCuO and Cu shell or a ceramic core YBaCuO and bimetallic Cu/Nb shell. The interaction of the ceramics with the shell metal began already at 500 deg with the formation at the interafaces Cu-YBaCuO of oxide layers containing ceramic elements, and in the ceramic core - nonsuperconducting phases. A thin Al-layer placed between the ceramics and the shell appreciably decreased the reactability of the ceramics with respect to copper and niobium

Effect of self purification on the structural optical and electrical properties of copper doped oxidized Zn films

International Nuclear Information System (INIS)

Koshy, Obey; Abdul Khadar, M.

2015-01-01

The effect of self purification mechanism is studied on oxidized Cu–Zn thin films. Oxidized Cu–Zn thin films were prepared by thermal evaporation on glass substrates. XRD studies indicate that the oxidized Cu–Zn thin films are of hexagonal wurtzite structure. AFM images shows that with increase in copper wt. percent the nanoparticle morphology of oxidized Zn film turned to one dimensional nanorod morphology. XPS spectra of the oxidized Cu–Zn thin films shows the oxidized state of zinc and copper. The PL spectra of oxidized Zn film showed a strong and narrow near band edge emission at 380 nm whereas in the case of oxidized Cu–Zn thin films the emission showed peak near 410 nm corresponding to peak related to copper. With increase in copper content, the intensity of the defect emission decreased due to the self purification mechanism in nanomaterials. In addition the resistivity of doped films increased due to the self purification mechanism in nanomaterials. - Highlights: • Copper doping in ZnO resulted in the increase in blue emission due to defect levels formed. • The intensity of the luminescence peak of the doped film sample decreased and resistivity increased due to the self purification mechanism in nanomaterials.

Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

Science.gov (United States)

Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

2018-01-01

This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

Science.gov (United States)

Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

2018-05-01

Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

A divalent rare earth oxide semiconductor: Yttrium monoxide

Energy Technology Data Exchange (ETDEWEB)

Kaminaga, Kenichi; Sei, Ryosuke [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Department of Chemistry, Tohoku University, Sendai 980-8578 (Japan); Hayashi, Kouichi [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Happo, Naohisa [School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Tajiri, Hiroo [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo 679-5198 (Japan); Oka, Daichi; Fukumura, Tomoteru, E-mail: tomoteru.fukumura.e4@tohoku.ac.jp [Department of Chemistry, Tohoku University, Sendai 980-8578 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan)

2016-03-21

Rare earth oxides are usually widegap insulators like Y{sub 2}O{sub 3} with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y{sup 2+} (4d{sup 1}) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has been recognized as gaseous phase in previous studies. In contrast with Y{sub 2}O{sub 3}, YO was dark-brown colored and narrow gap semiconductor. The tunable electrical conductivity ranging from 10{sup −1} to 10{sup 3} Ω{sup −1 }cm{sup −1} was attributed to the presence of oxygen vacancies serving as electron donor. Weak antilocalization behavior observed in magnetoresistance indicated significant role of spin-orbit coupling as a manifestation of 4d electron carrier.

Yttrium implantation and addition element effects on the oxidation behaviour of reference steels at 973 K

Energy Technology Data Exchange (ETDEWEB)

Caudron, E.; Buscail, H.; Cueff, R.; Issartel, C.; El Messki, S.; Perrier, S.; Riffard, F. [Lab. Vellave d' Elaboration et d' Etude des Materiaux, Univ. Blaise Pascal Clermont-Fd 2, Le Puy en Velay (France)

2004-07-01

Yttrium implantation effects on reference steels (extra low carbon and low manganese steel) were studied by rutherford backscattering spectrometry (RBS), reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) and glancing angle X-ray diffraction (GAXRD). Thermogravimetry and in situ X-ray diffraction at 700 C and P{sub O2}=0.04 Pa for 24h were used to determine the yttrium implantation and addition element effects on sample oxidation resistance at high temperatures. This study clearly shows that yttrium implantation and subsequent high temperature oxidation induced the formation of several yttrium mixed oxides which closely depend on the reference steel addition elements. Moreover, these yttrium mixed oxides seem to be responsible for the improved reference steel oxidation resistance at high temperatures. (orig.)

Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

OpenAIRE

Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

2016-01-01

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

Yttrium and lanthanum recovery from low cerium carbonate, yttrium carbonate and yttrium concentrate

International Nuclear Information System (INIS)

Vasconcelos, Mari Estela de

2006-01-01

In this work, separation, enrichment and purification of lanthanum and yttrium were performed using as raw material a commercial low cerium rare earth concentrate named LCC (low cerium carbonate), an yttrium concentrate named 'yttrium carbonate', and a third concentrated known as 'yttrium earths oxide. The first two were industrially produced by the late NUCLEMON - NUCLEBRAS de Monazita e Associados Ltda, using Brazilian monazite. The 'yttrium earths oxide' come from a process for preparation of lanthanum during the course of the experimental work for the present thesis. The following techniques were used: fractional precipitation with urea; fractional leaching of the LCC using ammonium carbonate; precipitation of rare earth peroxycarbonates starting from the rare earth complex carbonates. Once prepared the enriched rare earth fractions the same were refined using the ion exchange chromatography with strong cationic resin without the use of retention ion and elution using the ammonium salt of ethylenediaminetetraacetic acid. With the association of the above mentioned techniques were obtained pure oxides of yttrium (>97,7%), lanthanum (99,9%), gadolinium (96,6%) and samarium (99,9%). The process here developed has technical and economic viability for the installation of a large scale unity. (author)

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

2015-01-01

Pure and (Ca and Si)-substituted yttrium iron garnet (Y 3 Fe 5 O 12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , or GGG) single crystal substrates were irradiated by 50 MeV 32 Si and 50 MeV (or 60 MeV) 63 Cu ions for electronic stopping powers larger than the threshold value (∼4 MeV μm −1 ) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10 11 –10 16 cm −2 ) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ∼10 14 cm −2 . Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10 14 cm −2 ), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ∼660 cm −1 is assigned to vibration modes of randomized bonds in tetrahedral (FeO 4 ) units. (paper)

Microstructure and superconducting properties of YBCO bulk superconductors with RE substitutions

Czech Academy of Sciences Publication Activity Database

Volochová, D.; Antal, V.; Piovarči, S.; Kováč, J.; Jirsa, Miloš; Noudem, J.; Diko, P.

2016-01-01

Roč. 26, č. 3 (2016), s. 1-4, č. článku 7200604. ISSN 1051-8223 Institutional support: RVO:68378271 Keywords : yttrium barium copper oxide * critical current density (superconductivity) * powders * magnetic fields * microstructure * temperature measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.092, year: 2015

Interaction of oxygen vacancies in yttrium germanates

KAUST Repository

Wang, Hao

2012-01-01

Forming a good Ge/dielectric interface is important to improve the electron mobility of a Ge metal oxide semiconductor field-effect transistor. A thin yttrium germanate capping layer can improve the properties of the Ge/GeO 2 system. We employ electronic structure calculations to investigate the effect of oxygen vacancies in yttrium-doped GeO 2 and the yttrium germanates Y 2Ge 2O 7 and Y 2GeO 5. The calculated densities of states indicate that dangling bonds from oxygen vacancies introduce in-gap states, but the system remains insulating. However, yttrium-doped GeO 2 becomes metallic under oxygen deficiency. Y-doped GeO 2, Y 2Ge 2O 7 and Y 2GeO 5 are calculated to be oxygen substoichiometric under low Fermi energy conditions. The use of yttrium germanates is proposed as a way to effectively passivate the Ge/dielectric interface. This journal is © 2012 the Owner Societies.

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

Method for production of transparent yttrium oxide

International Nuclear Information System (INIS)

Dutta, S.K.; Gazza, G.A.

1975-01-01

The method comprises vacuum hot pressing the yttrium oxide (Y 2 O 3 ) powder in a graphite die at temperatures of between 1300 to 1500 0 C and uniaxial pressures of between 5000 to 7000 psi, for a period of 1 to 2 hours. (U.S.)

Improvement of the oxidation resistance of Tribaloy T-800 alloy by the additions of yttrium and aluminium

International Nuclear Information System (INIS)

Zhang, Y.-D.; Zhang, C.; Lan, H.; Hou, P.Y.; Yang, Z.-G.

2011-01-01

Research highlights: → The additions of yttrium (Y) reduced the oxidation rate of Tribaloy T-800 alloy. → Y promoted selective oxidation of Cr due to refinement of alloy phase size. → The oxidation rate was further reduced by Y plus Al with a protective Al 2 O 3 scale. → The positive effect of Y and Al being more pronounced at the higher temperature. - Abstract: The microstructures and oxidation behaviour of the modified Tribaloy T-800 alloys by additions of yttrium and yttrium plus aluminium have been studied. At the presence of yttrium alone, the oxidation rate decreased, and the selective oxidation of chromium was promoted, which was related to the refinement of alloy phase size. The addition of yttrium plus aluminium further reduced the oxidation rate. The selective oxidation of chromium and aluminium were both promoted significantly. The benefits were especially pronounced at 1000 o C, with the formation of protective alumina external layer and no internal oxides, which may be detrimental to the alloy mechanical property.

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Optical and Electrical Properties of Copper Oxide Thin Films Synthesized by Spray Pyrolysis Technique

Directory of Open Access Journals (Sweden)

S. S. Roy

2015-08-01

Full Text Available Copper oxide (CuO thin films have been synthesized on to glass substrates at different temperatures in the range 250-450 °C by spray pyrolysis technique from aqueous solution using cupric acetate Cu(CH3COO2·H2O as a precursor. The structure of the deposited CuO thin films characterized by X-ray diffraction, the surface morphology was observed by a scanning electron microscope, the presence of elements was detected by energy dispersive X-ray analysis, the optical transmission spectra was recorded by ultraviolet-visible spectroscopy and electrical resistivity was studied by Van-der Pauw method. All the CuO thin films, irrespective of growth temperature, showed a monoclinic structure with the main CuO (111 orientation, and the crystallite size was about 8.4784 Å for the thin film synthesized at 350 °C. The optical transmission of the as-deposited film is found to decrease with the increase of substrate temperature, the optical band gap of the thin films varies from 1.90 to 1.60 eV and the room temperature electrical resistivity varies from 30 to18 Ohm·cm for the films grown at different substrate temperatures.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Science.gov (United States)

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

The influence of implanted yttrium on the cyclic oxidation behaviour of 304 stainless steel

Energy Technology Data Exchange (ETDEWEB)

Riffard, F. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France)]. E-mail: riffard@iut.u-clermont1.fr; Buscail, H. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France); Caudron, E. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France); Cueff, R. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France); Issartel, C. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France); Perrier, S. [Laboratoire Vellave sur l' Elaboration et l' Etude des Materiaux (LVEEM), CNRS-EA 3864, Universite Blaise Pascal Clermont-Fd II, 8 rue J.B. Fabre, B. P. 219, 43006 Le Puy-en-Velay (France)

2006-03-15

High-temperature alloys are frequently used in power plants, gasification systems, petrochemical industry, combustion processes and in aerospace applications. Depending on the application, materials are subjected to corrosive atmospheres and thermal cycling. In the present work, thermal cycling was carried out in order to study the influence of implanted yttrium on the oxide scale adherence on 304 steel specimens oxidised in air at 1273 K. In situ X-ray diffraction indicates that the oxides formed at 1273 K are different on blank specimens compared to implanted specimens. Glancing angle XRD allows to analyse the oxide scale composition after cooling to room temperature. Experimental results show that yttrium implantation at a nominal dose of 10{sup 17} ions cm{sup -2} does not improve significantly the cyclic oxidation behaviour of the austenitic AISI 304 steel. However, it appears that yttrium implantation remarkably enhance the oxidation resistance during isothermal oxidation. It reduces the transient oxidation stage and the parabolic oxidation rate constant by one order of magnitude.

Crystallization inhibitors for amorphous oxides

International Nuclear Information System (INIS)

Reznitskij, L.A.; Filippova, S.E.

1993-01-01

Data for the last 10 years, in which experimental results of studying the temperature stabilization of x-ray amorphous oxides (including R 3 Fe 5 O 12 R-rare earths, ZrO 2 , In 2 O 3 , Sc 2 O 3 ) and their solid solution are presented, are generalized. Processes of amorphous oxide crystallization with the production of simple oxides, solid solutions and chemical compounds with different polyhedral structure, are investigated. Energy and crystallochemical criteria for selecting the doping inhibitor-components stabilizing the amorphous state are ascertained, temperatures and enthalpies of amorpous oxide crystallization are determined, examination of certain provisions of iso,orphous miscibility theory is conducted

The reactive element effect of yttrium and yttrium silicon on high temperature oxidation of NiCrAl coating

Science.gov (United States)

Ramandhany, S.; Sugiarti, E.; Desiati, R. D.; Martides, E.; Junianto, E.; Prawara, B.; Sukarto, A.; Tjahjono, A.

2018-03-01

The microstructure formed on the bond coat affects the oxidation resistance, particularly the formation of a protective oxide layer. The adhesion of bond coat and TGO increased significantly by addition of reactive element. In the present work, the effect of yttrium and yttrium silicon as reactive element (RE) on NiCrAl coating was investigated. The NiCrAl (without RE) and NiCrAlX (X:Y or YSi) bond coating were deposited on Hastelloy C-276 substrate by High Velocity Oxygen Fuel (HVOF) method. Isothermal oxidation was carried out at 1000 °C for 100 hours. The results showed that the addition of RE could prevent the breakaway oxidation. Therefore, the coating with reactive element were more protective against high temperature oxidation. Furthermore, the oxidation rate of NiCrAlY coating was lower than NiCrAlYSi coating with the total mass change was ±2.394 mg/cm2 after 100 hours of oxidation. The thickness of oxide scale was approximately 1.18 μm consisting of duplex oxide scale of spinel NiCr2O4 in outer scale and protective α-Al2O3 in inner scale.

Cerium and yttrium oxide nanoparticles are neuroprotective

International Nuclear Information System (INIS)

Schubert, David; Dargusch, Richard; Raitano, Joan; Chan, S.-W.

2006-01-01

The responses of cells exposed to nanoparticles have been studied with regard to toxicity, but very little attention has been paid to the possibility that some types of particles can protect cells from various forms of lethal stress. It is shown here that nanoparticles composed of cerium oxide or yttrium oxide protect nerve cells from oxidative stress and that the neuroprotection is independent of particle size. The ceria and yttria nanoparticles act as direct antioxidants to limit the amount of reactive oxygen species required to kill the cells. It follows that this group of nanoparticles could be used to modulate oxidative stress in biological systems

Solution processing of YBa2Cu3O7-x thin films

International Nuclear Information System (INIS)

Singhal, A.; Paranthaman, M.; Specht, E.D.; Hunt, R.D.; Beach, D.B.; Martin, P.M.; Lee, D.F.

1997-12-01

The aim of this work was to develop a non-vacuum chemical deposition technique for YBa 2 Cu 3 O 7-x (YBCO) coated conductors on rolling-assisted biaxially textured substrates (RABiTS). The authors have chosen the metal-organic decomposition (MOD) and sol-gel precursor routes to grow textured YBCO films. In the MOD process, yttrium 2-ethylhexonate, barium neodecanoate, copper 2-ethylhexonate and toluene were used as the starting reagents. YBCO films processed by the MOD method on SrTiO 3 (100) single crystal substrates were consisted of c and a-axis oriented materials. These films also contained some amount of the random phase. The c and a-axis oriented materials were epitaxial on SrTiO 3 substrates. Films have a T c,onset of 89K and the best superconducting transition temperature of 63K. Films pyrolyzed at 525 C and subsequently annealed at 780 C in a p(O 2 ) of 3.5 x 10 -4 atm contained YBCO phase predominantly in a-axis orientation. In the sol-gel route, yttrium-isopropoxide, barium metal, copper methoxide and 2-methoxyethanol were used as the starting reagents. Sol-gel YBCO films on SrTiO 3 substrates were epitaxial and c-axis oriented

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

Science.gov (United States)

Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

2015-04-22

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Influence of titanium oxide films on copper nucleation during electrodeposition

International Nuclear Information System (INIS)

Chang, Hyun K.; Choe, Byung-Hak; Lee, Jong K.

2005-01-01

Copper electrodeposition has an important industrial role because of various interconnects used in electronic devices such as printed wire boards. With an increasing trend in device miniaturization, in demand are void-free, thin copper foils of 10 μm thick or less with a very low surface profile. In accordance, nucleation kinetics of copper was studied with titanium cathodes that were covered with thin, passive oxide films of 2-3 nm. Such an insulating oxide layer with a band gap of 3 eV is supposed to nearly block charge transfer from the cathode to the electrolyte. However, significant nucleation rates of copper were observed. Pipe tunneling mechanism along a dislocation core is reasoned to account for the high nucleation kinetics. A dislocation core is proposed to be a high electron tunneling path with a reduced energy barrier and a reduced barrier thickness. In supporting the pipe tunneling mechanism, both 'in situ' and 'ex situ' scratch tests were performed to introduce extra dislocations into the cathode surface, that is, more high charge paths via tunneling, before electrodeposition

Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

Directory of Open Access Journals (Sweden)

Guo Lan

2014-01-01

Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

International Nuclear Information System (INIS)

Sallis, Shawn; Williams, Deborah S.; Quackenbush, Nicholas F.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.J.

2015-01-01

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In + lone pair active electrons as the origin of the deep subgap features. No In + species are observed, only In 0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

Science.gov (United States)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

Energy Technology Data Exchange (ETDEWEB)

Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

2016-02-15

We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

Science.gov (United States)

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Preparation and characterization of antimony barium composite oxide photocatalysts

Science.gov (United States)

Han, X. P.; Yao, B. H.; Pan, Q. H.; Pen, C.; Zhang, C. L.

2018-01-01

In this paper, two kinds of antimony barium composite oxide photocatalysts have been prepared by two methods and characterized by XRD and SEM. The photocatalytic activity was evaluated by a photocatalytic reactor and an ultraviolet spectrophotometer. The results showed that-BaSb2O5•4H2O, BaSb2O6 two kinds of antimony barium composite oxide photocatalysts were successfully prepared in this experiment and they showed good photocatalytic properties. In addition, BaSb2O6 morphology showed more regular, microstructure and better catalytic performance.

Preparation of yttrium iron garnet (YIG) by modified domestic iron oxide

International Nuclear Information System (INIS)

Mozaffari, M.; Amighian

2002-01-01

Iron oxide by product of a local steel complex was modified to use for preparation of Yttrium iron garnet (YIG). The improvement was necessary to reduce impurities, especially the Si0 2 and Cl contents, which have deteriorative effects on magnetic properties and equipment used for preparation of the samples. The modified iron oxide was then mixed with Yttrium oxide of Merck Company in appropriate proportion to obtain a stoichiometric single phase YIG, using the conventional ceramic technique. XRD and SEM equipments were used to identify the resulting phases and microstructure respectively. Magnetic parameters were measured by VSM. Curie temperature of the samples was obtained by DTG (M) method. The results were compared with those obtained from samples that made by Merck iron oxide. There are small differences between the results. This was discussed according to extra pores and minute secondary phase in the samples made by domestic iron oxide. (Author)

Expeditious low-temperature sintering of copper nanoparticles with thin defective carbon shells

Science.gov (United States)

Kim, Changkyu; Lee, Gyoungja; Rhee, Changkyu; Lee, Minku

2015-04-01

The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation. Isothermal oxidation and reduction treatment at 200 °C for only about 10 min yields an oxide-free copper network structure with an electrical resistivity of 25.1 μΩ cm (14.0 μΩ cm at 250 °C). Finally, conductive copper line patterns are achieved down to a 50 μm width with an excellent printing resolution (standard deviation ~4.0%) onto a polyimide substrate using screen printing of the optimized inks.The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation

Amorphous gallium oxide grown by low-temperature PECVD

KAUST Repository

Kobayashi, Eiji

2018-03-02

Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

Science.gov (United States)

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

Energy Technology Data Exchange (ETDEWEB)

Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

2015-07-15

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

International Nuclear Information System (INIS)

Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

2015-01-01

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O 2 , H 2 O, and N 2 O as the reactive gases. Experimental results show that the electrical properties of the N 2 O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N 2 O introduction into the deposition process, where the field mobility reach to 30.8 cm 2 V –1 s –1 , which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT

Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO{sub 3} electrolyte on porous anodic aluminum oxide substrate

Energy Technology Data Exchange (ETDEWEB)

Ha, Seungbum [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Su, Pei-Chen [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Cha, Suk Won, E-mail: swcha@snu.ac.kr [School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of)

2013-10-01

This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm{sup 2} at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Processing-dependent thermal stability of a prototypical amorphous metal oxide

Science.gov (United States)

Zeng, Li; Moghadam, Mahyar M.; Buchholz, D. Bruce; Li, Ran; Keane, Denis T.; Dravid, Vinayak P.; Chang, Robert P. H.; Voorhees, Peter W.; Marks, Tobin J.; Bedzyk, Michael J.

2018-05-01

Amorphous metal oxides (AMOs) are important candidate materials for fabricating next-generation thin-film transistors. While much attention has been directed toward the synthesis and electrical properties of AMOs, less is known about growth conditions that allow AMOs to retain their desirable amorphous state when subjected to high operating temperatures. Using in situ x-ray scattering and level-set simulations, we explore the time evolution of the crystallization process for a set of amorphous I n2O3 thin films synthesized by pulsed-laser deposition at deposition temperatures (Td) of -50, -25, and 0 °C. The films were annealed isothermally and the degree of crystallinity was determined by a quantitative analysis of the time-evolved x-ray scattering patterns. As expected, for films grown at the same Td, an increase in the annealing temperature TA led to a shorter delay prior to the onset of crystallization, and a faster crystallization rate. Moreover, when lowering the deposition temperature by 25 °C, a 40 °C increase in annealing temperature is needed to achieve the same time interval for the crystals to grow from 10 to 90% volume fraction of the sample. Films grown at Td=0 ∘C exhibited strong cubic texture after crystallization. A level-set method was employed to quantitatively model the texture that develops in the microstructures and to determine key parameters, such as the interface growth velocity, the nucleation density, and the activation energy. The differences observed in the crystallization processes are attributed to the changes in the atomic structure of the oxide and possible nanocrystalline inclusions that formed during the deposition of the amorphous phase.

Spectrographic determination of strontium in yttrium-90 solutions; Determinacion espectrografica de estroncio en soluciones de itrio-90

Energy Technology Data Exchange (ETDEWEB)

Roca, M; Capdevila, C

1970-07-01

The copper spark method has been used for determining strontium in the concentration range 1-100 g/ml in yttrium-90 solutions containing 0,5 % or thereabouts of ammonium citrate. The influence of the citric acid as well as the ammonium citrate with regard to 2N HCL solutions has been studied: the citric acid enhances the line intensities of strontium. The employment of either barium or lanthanum as reference element compensates for this enhancement. Because of the increase in sensitivity mentioned above, the study of influence of the citric acid has been extended and several impurities usually determined in radioisotope solutions have been considered. (Author) 4 refs.

Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

Energy Technology Data Exchange (ETDEWEB)

Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

2016-05-23

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

Influence of Magnetron Effect on Barium Hexaferrite Thin Layers

International Nuclear Information System (INIS)

Hassane, H.; Chatelon, J.P.; Rousseau, J.J; Siblini, A.; Kriga, A.

2011-01-01

In this paper, we study the effects of a magnet, located in the cathode, on barium hexaferrite thin films deposited by RF magnetron sputtering technique. During the process, these effects can modify thickness, roughness and stress of coatings. The characteristics of the deposited layers depend on the substrate position that is located opposite of magnetron cathode. In the m agnetron area , one can observe that the high stress can produce cracks or detachment of layers and the increasing of both depositing rate and surface roughness. After sputtering elaboration, barium hexaferrite films are in a compressive stress mode. But, after the post-deposition heat treatment these films are in a tensile stress mode. To improve the quality of BaM films, the subsrtate has to be set outside the magnetron area. (author)

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Directory of Open Access Journals (Sweden)

Shiben Hu

2018-03-01

Full Text Available In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO thin-film transistor (TFT based on alumina oxide (Al 2 O 3 passivation layer (PVL and copper (Cu source/drain electrodes (S/D. The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5–220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Effets thermoelectrique et thermomagnetique du yttrium barium copper oxide monocristallin

Science.gov (United States)

Ghamlouche, Hassan

1998-09-01

Des la decouverte des supraconducteurs a haute temperature critique, les recherches se sont intensifiees afin de comprendre les mecanismes qui sont a l'origine des proprietes de ces materiaux L'etat mixte, tout comme l'etat supraconducteur pur et l'etat normal, a fait l'objet de nombreux travaux de recherche. En particulier, la structure des vortex a l'etat mixte, et leur mouvement sous l'effet d'une force quelconque, etaient et restent le centre de preoccupation. Les effets thermoelectrique (Seebeck) et thermomagnetique (Nernst) sont parmi les differentes mesures qui peuvent donner de l'information sur les etats des vortex a l'etat mixte. L'avantage essentiel de ces deux effets est l'absence d'un courant electrique applique. Ce dernier peut donner des perturbations indesirables durant les mesures. D'autre pari, nous avons utilise la methode CA (Courant Alternatif) pour effectuer nos mesures. Cette methode est caracterisee par une meilleure resolution par rapport a la methode CC (Courant Continu) conventionnelle. Nous avons etudie autant des echantillons macles que des echantillons sans macles. D'abord nous avons teste notre montage a champ magnetique nul. Nous avons alors montre que le pic rapporte par certains dans l'effet Seebeck a la transition supraconductrice ne correspond pas a une realite physique mais a un artefact experimental. On avait associe ce pic aux fluctuations. Par la suite, nous avons mis en evidence et etudie pour la premiere fois avec les effets Seebeck et Nernst le phenomene de la fusion du reseau de vortex grace a des mesures sur les echantillons sans macles. Cette etude s'est faite pour deux concentrations d'oxygene differentes et pour un gradient de temperature parallele, consecutivement, aux deux axes cristallographiques dans le plan ab. Finalement, nous avons etudie l'effet des plans de maclage sur le mouvement des vortex. Ceci a ete realise en appliquant le gradient de temperature selon trois directions differentes (0, 45 et 90°) avec les plans de maclage. Nous avons observe, pour le premier angle un mouvement libre du vortex, pour le second angle une contribution de l'effet Nernst a l'effet Seebeck et pour la troisieme direction un phenomene d'activation. Dans ce dernier cas, les plans de maclage font un obstacle qui s'oppose au mouvement des vortex. De ce qui precede, nous concluons qu'avec la bonne resolution de notre technique nous sommes capables d'observer des phenomenes que la technique CC ne met pas en relief. D'autre part, la variete d'echantillons que nous avons etudies et les phenomenes que nous avons observes valorisent la presente etude.

Yttrium aluminum garnet coating on glass substrate

Energy Technology Data Exchange (ETDEWEB)

Ferreira, Camila M.A.; Freiria, Gabriela S.; Faria, Emerson H. de; Rocha, Lucas A.; Ciuffi, Katia J.; Nassar, Eduardo J., E-mail: eduardo.nassar@unifran.edu.br

2016-02-15

Thin luminescent films have seen great technological advances and are applicable in the production of a variety of materials such as sensors, solar cells, photovoltaic devices, optical magnetic readers, waveguides, lasers, and recorders. Systems that contain yttrium aluminum oxide are important hosts for lanthanide ions and serve as light emission devices. This work deals with the deposition of yttrium aluminum garnet (YAG) film doped with Eu{sup 3+} onto a glass substrate obtained by the sol–gel methodology. Spray pyrolysis furnished the yttrium aluminum oxide powder. Dip-coating at a withdrawal speed of 10 mm min{sup −1} and evaporation led to deposition of different numbers of layers of the YAG:Eu{sup 3+} film onto the glass substrate from a YAG:Eu{sup 3+} powder suspension containing ethanol, water, and tetraethylorthosilicate. Photoluminescence, X-ray diffraction, scanning electron microscopy, and transparency measurements aided film characterization. The emission spectra revealed that the number of layers influenced film properties. - Highlights: • The spray pyrolysis was used to obtain luminescent YAG:Eu{sup 3+}. • The matrix was deposited as transparent films. • The YAG:Eu{sup 3+} was deposited by sol–gel process onto glass substrate.

Yttrium aluminum garnet coating on glass substrate

International Nuclear Information System (INIS)

Ferreira, Camila M.A.; Freiria, Gabriela S.; Faria, Emerson H. de; Rocha, Lucas A.; Ciuffi, Katia J.; Nassar, Eduardo J.

2016-01-01

Thin luminescent films have seen great technological advances and are applicable in the production of a variety of materials such as sensors, solar cells, photovoltaic devices, optical magnetic readers, waveguides, lasers, and recorders. Systems that contain yttrium aluminum oxide are important hosts for lanthanide ions and serve as light emission devices. This work deals with the deposition of yttrium aluminum garnet (YAG) film doped with Eu 3+ onto a glass substrate obtained by the sol–gel methodology. Spray pyrolysis furnished the yttrium aluminum oxide powder. Dip-coating at a withdrawal speed of 10 mm min −1 and evaporation led to deposition of different numbers of layers of the YAG:Eu 3+ film onto the glass substrate from a YAG:Eu 3+ powder suspension containing ethanol, water, and tetraethylorthosilicate. Photoluminescence, X-ray diffraction, scanning electron microscopy, and transparency measurements aided film characterization. The emission spectra revealed that the number of layers influenced film properties. - Highlights: • The spray pyrolysis was used to obtain luminescent YAG:Eu 3+ . • The matrix was deposited as transparent films. • The YAG:Eu 3+ was deposited by sol–gel process onto glass substrate.

The Y2BaCuO5 oxide as green pigment in ceramics

International Nuclear Information System (INIS)

Fernandez, F.; Colon, C.; Duran, A.; Barajas, R.; Llopis, J.; Paje, S.E.; Saez-Puche, R.; Julian, I.

1998-01-01

Fine particles of green yttrium-barium-copper-oxide pigments Y 2 BaCuO 5 have been prepared using two different synthesis methods. The process of combustion of mixed nitrates and urea needs a maximal temperature of 900 C and provides samples formed by aggregates of homogeneous small particles with a size of about 0.3 μm. However, the ceramic method requires 1050 C as synthesis temperature, and yields rather higher particle sizes. Even after grinding, these samples are formed by heterogeneous particles with mean sizes of about 3 μm. Diffuse reflectance spectra reveal that the samples obtained using the former method present a higher brilliancy, so they have been selected to be tested as green pigment in ceramics with good results. (orig.)

Two new barium-copper-ethylene glycol complexes: Synthesis and structure of BaCu(C2H6O2)n(C2H4O2)2 (N = 3, 6)

International Nuclear Information System (INIS)

Love, C.P.; Page, C.J.; Torardi, C.C.

1992-01-01

Two crystalline barium-copper-ethylene glycol complexes have been isolated and structurally characterized by single-crystal x-ray diffraction. The solution-phase complex has also been investigated as a molecular precursor for use in sol-gel synthesis of high-temperature superconductors. The first crystalline form has the formula BaCu(C 2 H 6 O 2 ) 6 (C 2 H 4 O 2 ) 2 (1) and has been isolated directly from ethylene glycol solutions of the barium-copper salt. In this molecule, copper is coordinated to the four xygens of two ethylene glycolate ligands in a nearly square planar geometry. Barium is coordinated by three bidentate ethylene glycol molecules and three monodentate ethylene glycol molecules; the 9-fold coordination resembles a trigonal prism with each rectangular face capped. Copper and barium moieties do not share any ethylene glycol or glycolate oxygens; they are found by hydrogen bonding to form linear chains. The second crystal type has formula BaCu(C 2 H 6 O 2 ) 3 (C 2 H 4 O 2 ) 2 (2). It was prepared via crystallization of the mixed-metal alkoxide from an ethylene glycol/methyl ethyl ketone solution. As for 1, the copper is coordinated to four oxygen atoms of two ethylene glycolate ligands in a nearly square planar arrangement. Barium is 8-coordinate in a distorted cubic geometry. It is coordinated to three bidentate ethylene glycol molecules and shares two of the oxygen atoms bound to the copper (one from each coordinated ethylene glycol) to form a discrete molecular barium-copper complex

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Science.gov (United States)

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

2014-01-01

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Energy Technology Data Exchange (ETDEWEB)

Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

2014-01-30

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

The influence of predeformations and annealings on yield stress and modulus of elongation essentially yttrium doped copper

International Nuclear Information System (INIS)

Neklyudov, I.M.; Sytin, V.I.; Voevodin, V.N.

2003-01-01

The researches results of influence of predeformations and annealings on elastic and plastic characteristics of vacuum melting and yttrium doped copper are given. The interrelation between elastic and plastic characteristics has been shown. It is shown that the yield stress and modulus of elongation essentially depend on predeformations and annealings and they are the structurally sensitive characteristics

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

2014-01-01

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

Science.gov (United States)

Lee, Seungwoon; Jeong, Jaewook

2017-08-01

In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

Fabrication and properties of yttrium doped barium titanate film by RF sputtering

International Nuclear Information System (INIS)

Igarashi, H.; Yuasa, M.; Okazaki, K.

1985-01-01

Semiconductive barium titanate films were fabricated by RF sputtering on fused quartz, alumina and barium titanate ceramic substrates using barium titanate ceramic with a small amount of yttria as a target. The films on the barium titanate substrates turned blue color and showed a small PTC effect by heat-treating at 1000 0 C in the air after deposition at the substrate temperature of 600 0 C

Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures

International Nuclear Information System (INIS)

Hilali, Mohamed M; Banerjee, Sanjay; Sreenivasan, S V; Yang Shuqiang; Miller, Mike; Xu, Frank

2012-01-01

In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent. (paper)

Graphene-based copper oxide thin film nanostructures as high-efficiency photocathode for p-type dye-sensitized solar cells

Science.gov (United States)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Cebeci, Hulya; Urk, Deniz

2017-10-01

Graphene-based p-type dye-sensitized solar cells (p-DSSCs) have been proposed and fabricated using copper oxide urchin-like nanostructures (COUN) as photocathode with an FeS2 counter electrode (CE). COUN composed of Cu2O core sphere and CuO shell nanorods with overall diameters of 2 to 4 μm were grown by a simple hydrothermal method with self-assemble nucleation. It was figured out that the formation of copper oxide core/shell structures could be adjusted by an ammonia additive leading to pH change of the precursor solution. In addition to a photocathode, we also demonstrated FeS2 thin films as an efficient CE material alternative to the conventional Pt CEs in DSSCs. FeS2 nanostructures, with diameters of 50 to 80 nm, were synthesized by a similar hydrothermal approach. FeS2 nanostructures are demonstrated to be an outstanding CE material in p-DSSCs. We report graphene/COUN as photocathode and Pt/FeS2 as CE in p-DSSCs, and results show that the synergetic combination of electrodes in each side (increased interconnectivity between COUN and graphene layer, high surface area, and high catalytic activity of FeS2) increased the power conversion efficiency from 1.56% to 3.14%. The excellent performances of COUN and FeS2 thin film in working and CEs, respectively, make them unique choices among the various photocathode and CE materials studied.

RBS Characterization of Yttrium Iron Garnet Thin Films

International Nuclear Information System (INIS)

Roumie, M; Abdel samad, B.

2008-01-01

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

Science.gov (United States)

Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

2017-03-01

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

Bonding tungsten, W–Cu-alloy and copper with amorphous Fe–W alloy transition

Energy Technology Data Exchange (ETDEWEB)

Wang, Song, E-mail: wangsongrain@163.com [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Zhao, Pei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zang, Nanzhi [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Wang, Jianjun [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Shibin [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zhang, Jun [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Xu, Guiying [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China)

2013-05-15

W/Cu graded materials are the leading candidate materials used as the plasma facing components in a fusion reactor. However, tungsten and copper can hardly be jointed together due to their great differences in physical properties such as coefficient of thermal expansion and melting point, and the lack of solid solubility between them. To overcome those difficulties, a new amorphous Fe–W alloy transitional coating and vacuum hot pressing (VHP) method were proposed and introduced in this paper. The morphology, composition and structure of the amorphous Fe–W alloy coating and the sintering interface of the specimens were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). The thermal shock resistance of the bonded composite was also tested. The results demonstrated that amorphous structure underwent change from amorphous to nano grains during joining process, and the joined W/Cu composite can endued plasma thermal shock resistance with energy density more than 5.33 MW/m{sup 2}. It provides a new feasible technical to join refractory tungsten to immiscible copper with amorphous Fe–W alloy coating.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

Science.gov (United States)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Surface studies of barium and barium oxide on tungsten and its application to understanding the mechanism of operation of an impregnated tungsten cathode

Science.gov (United States)

Forman, R.

1976-01-01

Surface studies have been made of multilayer and monolayer films of barium and barium oxide on a tungsten substrate. The purpose of the investigation was to synthesize the surface conditions that exist on an activated impregnated tungsten cathode and obtain a better understanding of the mechanism of operation of such cathodes. The techniques employed in these measurements were Auger spectroscopy and work-function measurements. The results of this study show that the surface of an impregnated cathode is identical to that observed for a synthesized monolayer or partial monolayer of barium on oxidized tungsten by evaluating Auger spectra and work-function measurements. Data obtained from desorption studies of barium monolayers on a tungsten substrate in conjunction with Auger and work-function results have been interpreted to show that throughout most of its life an impreganated cathode has a partial monolayer, rather than a monolayer, of barium on its surface.

Conductivity of laser printed copper structures limited by nano-crystal grain size and amorphous metal droplet shell

International Nuclear Information System (INIS)

Winter, Shoshana; Zenou, Michael; Kotler, Zvi

2016-01-01

We present a study of the morphology and electrical properties of copper structures which are printed by laser induced forward transfer from bulk copper. The percentage of voids and the oxidation levels are too low to account for the high resistivities (∼4 to 14 times the resistivity of bulk monocrystalline copper) of these structures. Transmission electron microscope (TEM) images of slices cut from the printed areas using a focused ion beam (FIB) show nano-sized crystal structures with grain sizes that are smaller than the electron free path length. Scattering from such grain boundaries causes a significant increase in the resistivity and can explain the measured resistivities of the structures. The TEM images also show a nano-amorphous layer (∼5 nm) at the droplet boundaries which also contributes to the overall resistivity. Such morphological characteristics are best explained by the ultrafast cooling rate of the molten copper droplets during printing. (paper)

Studies on the pressed yttrium oxide-tungsten matrix as a possible dispenser cathode material

International Nuclear Information System (INIS)

Yang, Fan; Wang, Jinshu; Liu, Wei; Liu, Xiang; Zhou, Meiling

2015-01-01

Yttrium oxide was chosen as the secondary emission substance based on calculation results through first principle theory method. A new kind of pressed yttrium oxide-tungsten matrix dispenser cathodes are prepared by a sol–gel method combined with high temperature sintering in dry hydrogen atmosphere. The results show that the growth of the grains is hampered by the pinning effect of Y 2 O 3 distributing uniformly between the tungsten particles, resulting in the formation of small grain size. It is found that Y 2 O 3 improves the secondary electron emission property, i.e., the secondary emission yield increases with the increase of Y 2 O 3 content in the samples. The maximum secondary emission yield δ max of the cathode with 15% amount of Y 2 O 3 can reach 2.92. Furthermore, the cathode shows a certain thermionic emission performance. The zero field emission current density J 0 of 4.18A/cm 2 has reached at 1050 °C b for this kind of cathode after being activated at 1200 °C b , which are much higher than that of rare earth oxide doped molybdenum (REO-Mo) cathode reported in the previous work. - Highlights: • Yttrium oxide was chosen as the secondary emission substance based on first principle calculation result. • A new kind of cathode has been successfully obtained. • Pressed yttrium oxide-tungsten matrix dispenser cathode exhibits good emission properties. • The improvement of the cathode emission can be well explained by the surface analysis results presented in this work

Electrochemical synthesis, structure and phase composition of nano structured amorphous thin layers of NiW and Ni-Mo

International Nuclear Information System (INIS)

Vitina, I.; Lubane, M.; Belmane, V.; Rubene, V.; Krumina, A.

2006-01-01

Full text: Nano structured Ni-W thin layers containing W 6-37 wt.% were electrodeposited on a copper substratum. The W content in the layer changes, and it is determined by the electrolyte pH in the range 8.0-9.6 and the cathode current density in the range 1.0-10.0 A/dm 2 . The atomic composition and thermal stability of structure of the electrodeposited thin layers depend for the most part on the conditions of the electrodeposition and less on the W content in the layer. Cracking of the Ni-W layers electrodeposited at the electrolyte pH 8.5 and containing 34-37 wt.% W and 8.5 wt.% W was observed. The cracking increases at heating at 400 deg C for 50 h. On the contrary, no cracking of the Ni-W layer electrodeposited at the electrolyte pH 9.0 and containing 25 wt.% W was observed. The atomic composition of the layer remains practically unchanged at heating at 400 deg C for 50 h. The layer binds oxygen up to 7 wt.%. According to X-ray diffraction, in spite of the W content 35-37 wt.% in the layer, nano structured layers rather than amorphous layers were obtained which at heating at 400 deg C depending on the W content crystallises as Ni or intermetallic compounds Ni x W y if the W content is approx. 25 wt.%. Amorphous Ni-Mo alloys containing 35-52 wt.% Mo was electrodeposited on copper substratum at the cathode current densities of 0.5-1.5 A/dm2 and the electrolyte pH 6.8-8.6. Formation of thin layer (∼1-2μm) of X-ray amorphous Ni-Mo alloy, the Mo content, the characteristics of structure depend on the electrodeposition process, the electrolyte pH, and the cathode current density. The Ni-Mo layer deposited at the electrolyte pH above 8.6 and below average 6.8 had a nanocrystalline structure rather than characteristics of amorphous structure. Ni- W and Ni-Mo alloys were electrodeposited from citrate electrolyte not containing ammonium ions

High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

Energy Technology Data Exchange (ETDEWEB)

Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

2014-08-11

High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

Optimization Recovery of Yttrium Oxide in Precipitation, Extraction, and Stripping Process

Science.gov (United States)

Perwira, N. I.; Basuki, K. T.; Biyantoro, D.; Effendy, N.

2018-04-01

Yttrium oxide can be used as a dopant control rod of nuclear reactors in YSH material and superconductors. Yttrium oxide is obtained in the Xenotime mineral derived from byproduct of tin mining PT Timah Bangka which contain rare earth elements (REE) dominant Y, Dy, and Gd whose content respectively about 29.53%, 7.76%, and 2.58%. Both usage in the field of nuclear and non-nuclear science and technology is need to pure from the impurities. The presence of impurities in the yttrium oxide may affect the characteristic of the material and the efficiency of its use. Thus it needs to be separated by precipitation and extraction-stripping and calcination in the making of the oxide. However, to obtain higher levels of Yttrium oxide, it is necessary to determine the optimum conditions for its separation. The purpose of this research was to determine the optimum pH of precipitation, determine acid media and concentration optimum in extraction and stripping process and determine the efficiency of the separation of Y from REE concentrate. This research was conducted with pH variation in the precipitation process that pHs were 4 - 8, the difference of acid media for the extraction process, i.e., HNO3, HCl and H2SO4 with each concentration of 0,5 M; 1 M; 1,5 M; and 2 M and for stripping process were HNO3, HCl, and H2SO4 with each concentration of 1 M; 2M; and 3 M. Based on the result, the optimum pH of precipitation process was 6,5, the optimumacid media was HNO3 0,5 M, and for stripping process media was HNO3 3 M. The efficiency of precipitation process at pH 6,5 was 69,53 %, extraction process was 96.39% and stripping process was 4,50%. The separation process from precipitation to extraction had increased the purity and the highest efficiency recovery of Y was in the extraction process and obtained Y2O3 purer compared to the feed with the Y2O3 content of 92.87%.

A novel application of the CuI thin film for preparing thin copper nanowires

International Nuclear Information System (INIS)

Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

2005-01-01

We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

The strength limits of ultra-thin copper films

Energy Technology Data Exchange (ETDEWEB)

Wiederhirn, Guillaume

2007-07-02

Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

Science.gov (United States)

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

Science.gov (United States)

Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

2018-03-01

The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

Studies on the pressed yttrium oxide-tungsten matrix as a possible dispenser cathode material

Energy Technology Data Exchange (ETDEWEB)

Yang, Fan; Wang, Jinshu, E-mail: wangjsh@bjut.edu.cn; Liu, Wei; Liu, Xiang; Zhou, Meiling

2015-01-15

Yttrium oxide was chosen as the secondary emission substance based on calculation results through first principle theory method. A new kind of pressed yttrium oxide-tungsten matrix dispenser cathodes are prepared by a sol–gel method combined with high temperature sintering in dry hydrogen atmosphere. The results show that the growth of the grains is hampered by the pinning effect of Y{sub 2}O{sub 3} distributing uniformly between the tungsten particles, resulting in the formation of small grain size. It is found that Y{sub 2}O{sub 3} improves the secondary electron emission property, i.e., the secondary emission yield increases with the increase of Y{sub 2}O{sub 3} content in the samples. The maximum secondary emission yield δ{sub max} of the cathode with 15% amount of Y{sub 2}O{sub 3} can reach 2.92. Furthermore, the cathode shows a certain thermionic emission performance. The zero field emission current density J{sub 0} of 4.18A/cm{sup 2} has reached at 1050 °C{sub b} for this kind of cathode after being activated at 1200 °C{sub b}, which are much higher than that of rare earth oxide doped molybdenum (REO-Mo) cathode reported in the previous work. - Highlights: • Yttrium oxide was chosen as the secondary emission substance based on first principle calculation result. • A new kind of cathode has been successfully obtained. • Pressed yttrium oxide-tungsten matrix dispenser cathode exhibits good emission properties. • The improvement of the cathode emission can be well explained by the surface analysis results presented in this work.

Synthesis of yttrium oxide nanoparticles via a facile microplasma-assisted process

NARCIS (Netherlands)

Lin, Liangliang; Starostin, Sergey A.; Li, Sirui; Khan, Saif A.; Hessel, Volker

2018-01-01

Plasma electrochemistry is an emerging technique for nanomaterial synthesis. The present study reports the preparation of yttrium oxide nanoparticles via a simple, environmentally benign, microplasma-assisted process operated in pin-to-liquid configuration under ambient atmospheric conditions using

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

Directory of Open Access Journals (Sweden)

Hyun-Woo Lee

2018-01-01

Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Photocatalysis of Yttrium Doped BaTiO3 Nanofibres Synthesized by Electrospinning

Directory of Open Access Journals (Sweden)

Zhenjiang Shen

2015-01-01

Full Text Available Yttrium doped barium titanate (BT nanofibres (NFs with significant photocatalytic effect were successfully synthesized by electrospinning. Considering the necessary factors for semiconductor photocatalysts, a well-designed procedure was carried out to produce yttrium doped BT (BYT NFs. In contrast to BYT ceramics powders and BT NFs, BYT NFs with pure perovskite phase showed much enhanced performance of photocatalysis. The surface modification in electrospinning and subsequent annealing, the surface spreading of transition metal yttrium, and the narrowed band gap energy in yttrium doping were all contributed to the final novel photocatalytic effect. This work provides a direct and efficient route to obtain doped NFs, which has a wide range of potential applications in areas based on complex compounds with specific surface and special doping effect.

Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

International Nuclear Information System (INIS)

Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

1998-01-01

Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Science.gov (United States)

Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

2017-09-01

A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

Synthesis and characterization of nickel oxide doped barium strontium titanate ceramics

Energy Technology Data Exchange (ETDEWEB)

Banerjee, M. [Dept. of Electrical Engineering, Bengal Institute of Technology Kolkata (India); Mukherjee, S. [Dept. of Metallurgical Engineering, Jadavpur University, Kolkata (India); Maitra, S. [Govt. College of Engg. and Ceramic Technology, Kolkata (India)

2012-01-15

Barium strontium titanate (BST) ceramics (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} were synthesized by solid state sintering using barium carbonate, strontium carbonate and rutile as the precursor materials. The samples were doped with nickel oxide in different proportions. Different phases present in the sintered samples were determined from X-ray diffraction investigation and the distribution of different phases in the microstructure was assessed from scanning electron microscopy study. It was observed that the dielectric properties of BST were modified significantly with nickel oxide doping. These ceramics held promise for applications in tuned circuits. (author)

A divalent rare earth oxide semiconductor: Yttrium monoxide

Science.gov (United States)

Kaminaga, Kenichi; Sei, Ryosuke; Hayashi, Kouichi; Happo, Naohisa; Tajiri, Hiroo; Oka, Daichi; Fukumura, Tomoteru; Hasegawa, Tetsuya

Rare earth sesquioxides like Y2O3 are known as widegap insulators with the highly stable closed shell trivalent rare earth ions. On the other hand, rare earth monoxides such as YO have been recognized as gaseous phase, and only EuO and YbO were thermodynamically stable solid-phase rock salt monoxides. In this study, solid-phase rock salt yttrium monoxide, YO, was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO possesses unusual valence of Y2+ ([Kr] 4d1) . In contrast with Y2O3, YO was narrow gap semiconductor with dark-brown color. The electrical conductivity was tunable from 10-1 to 103 Ω-1 cm-1 by introducing oxygen vacancies as electron donor. Weak antilocalization behavior was observed indicating significant spin-orbit coupling owing to 4 d electron carrier. The absorption spectral shape implies the Mott-Hubbard insulator character of YO. Rare earth monoixdes will be new platform of functional oxides. This work was supported by JST-CREST, the Japan Society for the Promotion of Science (JSPS) with Grant-in-Aid for Scientific Research on Innovative Areas (Nos. 26105002 and 26105006), and Nanotechnology Platform (Project No.12024046) of MEXT, Japan.

Amorphous silicon thin-film solar cells on glass fiber textiles

Energy Technology Data Exchange (ETDEWEB)

Plentz, Jonathan, E-mail: jonathan.plentz@leibniz-ipht.de; Andrä, Gudrun; Pliewischkies, Torsten; Brückner, Uwe; Eisenhawer, Björn; Falk, Fritz

2016-02-15

Graphical abstract: - Highlights: • Amorphous silicon solar cells on textile glass fiber fabrics are demonstrated. • Open circuit voltages of 883 mV show shunt-free contacting on non-planar fabrics. • Short-circuit current densities of 3.7 mA/cm{sup 2} are limited by transmission losses. • Fill factors of 43.1% and pseudo fill factors of 70.2% show high series resistance. • Efficiencies of 1.4% and pseudo efficiencies of 2.1% realized on textile fabrics. - Abstract: In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm{sup 2} are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%.

The role of the native oxide shell on the microwave sintering of copper metal powder compacts

International Nuclear Information System (INIS)

Mahmoud, Morsi M.; Link, Guido; Thumm, Manfred

2015-01-01

Highlights: • Thin oxide native layer had a critical role on microwave sintering of copper. • Explain why microwaves interact with copper powder differently than its bulk. • Abnormal expansion in copper is due to the plastic deformation and crack formation. • In-situ setup gives important insight about the microwave sintering of metals. • Microwave sintering is a promising candidate technology in powder metallurgy. - Abstract: Successful microwave sintering of several metal powders had been reported by many researchers with remarkable improvements in the materials properties and/or in the overall process. However, the concept behind microwave heating of metal powders has not been fully understood till now, as it is well known that bulk metals reflect microwaves. The progress of microwave sintering of copper metal powder compacts was investigated via combining both in-situ electrical resistivity and dilatometry measurements that give important information about microstructural changes with respect to the inter-particle electrical contacts during sintering. The sintering behavior of copper metal powders was depending on the type of the gas used, particle size, the initial green density, the soaking sintering time and the thin oxide layer on the particles surfaces. The thin copper oxide native layer (ceramics) that thermodynamically formed on the particles surfaces under normal handling and ambient environmental conditions had a very critical and important role in the microwave absorption and interaction, the sintering behavior and the microstructural changes. This finding could help to have a fundamental understanding of why MW’s interact with copper metal powder in a different way than its bulk at room temperature, i.e. why a given metal powder could be heated using microwaves while its bulk reflects it

A simple wet chemical method for the determination of cation stoichiometry of YBa2Cu3O7-d

International Nuclear Information System (INIS)

Sahasranaman, S.; Premila, M.; Sreedharan, O.M.

1996-01-01

A comprehensive wet chemical procedure for the rapid analysis of yttrium, barium and copper ions in dilute HNO 3 medium has been developed to facilitate a precise and accurate determination of cation non-stoichiometry in high temperature ceramic superconducting materials Y 1±x Ba 2±y Cu 3±z O 7-d . The ease of analysis for copper by electrogravimetry and of yttrium and barium by a complexometric titration of the same aliquot against complexone III using arsenazo I as the indicator under appropriate pH has been demonstrated with the help of individual standard solutions and with synthetic mixtures. (author)

Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

Directory of Open Access Journals (Sweden)

Robert Mamazza

2012-04-01

Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

The effect of yttrium addition on oxidation of a sputtered nanocrystalline coating with moderate amount of tantalum in composition

International Nuclear Information System (INIS)

Wang, Jinlong; Chen, Minghui; Yang, Lanlan; Liu, Li; Zhu, Shenglong; Wang, Fuhui; Meng, Guozhe

2016-01-01

Graphical abstract: - Highlights: • Effect of Y addition on oxidation of nanocrystalline coating is studied. • Y addition delays transformation of q-Al_2O_3 to a-Al_2O_3 during oxidation. • Y addition prevents scale rumpling. • Y segregates at grain boundaries of the nanocrystalline coating. • Y retards the transportation of Ta thus reduces its oxidation. - Abstract: The effect of yttrium addition on isothermal oxidation at 1050 °C of a sputtered nanocrystalline coating with moderate amount of tantalum in composition was investigated. Results indicate that yttrium addition delays transformation of metastable θ-Al_2O_3 to equilibrium α-Al_2O_3 grown on the nanocrystalline coatings. It prevents scale rumpling and promotes the formation of oxide pegs at interface between the oxide scale and the underlying coating. Besides, yttrium prefers to segregate at grain boundaries of the nanocrystalline coating and retards the outward transportation of tantalum from coating to oxide scale, thus reducing the excessive oxidation of tantalum.

Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

Science.gov (United States)

Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae-Min

2018-03-01

In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 × 1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 × 108.

Arrays of membrane isolated yttrium-barium-copper-oxide kinetic inductance bolometers

International Nuclear Information System (INIS)

Lindeman, M. A.; Bonetti, J. A.; Bumble, B.; Day, P. K.; Holmes, W. A.; Kleinsasser, A. W.; Eom, B. H.

2014-01-01

We are developing of arrays of membrane isolated resonator-bolometers, each with a kinetic inductance device (KID) to measure the temperature of the membrane. The KIDs are fabricated out of the high temperature superconductor YBCO to allow operation at relatively high temperatures. The bolometers are designed to offer higher sensitivity than sensors operating at 300 K, but they require less expensive and lighter weight cooling than even more sensitive conventional superconducting detectors operating at lower temperatures. The bolometer arrays are applicable as focal planes in infrared imaging spectrometers, such as for planetary science missions or earth observing satellites. We describe the devices and present measurements of their sensitivity.

Experimental transport studies of yttrium barium copper oxide and lambda-DNA

Science.gov (United States)

Zhang, Yuexing

This dissertation consists of two parts. In Part I, we focus on the quasi-particle transport properties in the high temperature superconductor YBa2Cu3O7-delta (YBCO), probed by the thermal Hall conductivity (kappa xy). The thermal Hall conductivity selectively reflects the transport behaviors of the charge carriers. By measuring kappaxy in the normal state YBCO, we established a new method to determine the Wiedemann-Franz (WF) ratio in cuprates. We determined the Hall-channel WF ratio kappa xy/sigmaxyT in Cu and YBCO. In the latter, we uncovered a T-linear dependence and suppression of the Hallchannel WF ratio. The suppression of the Hall-channel WF ratio in systems with predominant electron-electron scattering will be discussed. Thermal transport behaviors of the quasi-particles in the mixed state were studied by measuring kappaxx and kappa xy in a high-purity YBCO crystal. From the field-dependence of the thermal conductivity kappaxx, we separated the quasi particle contribution (kappae) from the phonon background. In the Hall channel, we observed that the (weak-field) kappa xy increased 103-fold between T c (90 K) and 30 K, implying a 100-fold enhancement of the quasi-particle lifetime. We found that kappaxy exhibited a specific scaling behavior below ˜30 K. The implication of the scaling behavior will be discussed. In Part II, we describe an experiment on determining the electrical conductivity of the bacteriophage lambda-DNA, an issue currently under intense debate. We covalently bonded the DNA to Au electrodes by incorporating thiol modified dTTP into the 'sticky' ends of the lambda-DNA. Two-probe measurements on such molecules provided a lower bound for the resistivity rho > 10 6 mum at bias potentials up to 20 V, in conflict with recent claims of moderate to high conductivity. We stress the importance of eliminating salt residues in these measurements.

Arrays of membrane isolated yttrium-barium-copper-oxide kinetic inductance bolometers

Energy Technology Data Exchange (ETDEWEB)

Lindeman, M. A., E-mail: mark.a.lindeman@jpl.nasa.gov; Bonetti, J. A.; Bumble, B.; Day, P. K.; Holmes, W. A.; Kleinsasser, A. W. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States); Eom, B. H. [California Institute of Technology, Pasadena, California 91125 (United States)

2014-06-21

We are developing of arrays of membrane isolated resonator-bolometers, each with a kinetic inductance device (KID) to measure the temperature of the membrane. The KIDs are fabricated out of the high temperature superconductor YBCO to allow operation at relatively high temperatures. The bolometers are designed to offer higher sensitivity than sensors operating at 300 K, but they require less expensive and lighter weight cooling than even more sensitive conventional superconducting detectors operating at lower temperatures. The bolometer arrays are applicable as focal planes in infrared imaging spectrometers, such as for planetary science missions or earth observing satellites. We describe the devices and present measurements of their sensitivity.

Amorphization reaction in thin films of elemental Cu and Y

Science.gov (United States)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

2011-01-01

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

Directory of Open Access Journals (Sweden)

Tae-Jun Ha

2014-10-01

Full Text Available We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs for transparent electronics by exploring the shift in threshold voltage (Vth. A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO TFTs possessing large optical band-gap (≈3 eV was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

Energy Technology Data Exchange (ETDEWEB)

Ha, Tae-Jun [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)

2014-10-15

We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

Thermoluminescent response of aluminium oxide thin films subject to gamma irradiation

Energy Technology Data Exchange (ETDEWEB)

Arrieta, A.; Escobar A, L.; Camps, E.; Villagran, E.; Gonzalez, P.R

2006-07-01

The thermoluminescent (TL) properties of amorphous aluminium oxide thin films (thicknesses as low as 0.3 {mu}m) subjected to gamma (Co-60) irradiation are reported. Aluminium oxide thin films were prepared by laser ablation from an Al{sub 2}O{sub 3} target using a Nd: YAG laser with emission at the fundamental line. The films were exposed to gamma radiation (Co-60) in order to study their TL response. Thermoluminescence glow curves exhibited two peaks at 110 and 176 C. The high temperature peak shows good stability and 30% fading in the first 5 days after irradiation. A linear relationship between absorbed dose and the thermoluminescent response for doses span from 150 mGy to 100 Gy was observed. These results suggest that aluminium oxide thin films are suitable for detection and monitoring of gamma radiation. (Author)

Binary copper oxide semiconductors: From materials towards devices

Energy Technology Data Exchange (ETDEWEB)

Meyer, B.K.; Polity, A.; Reppin, D.; Becker, M.; Hering, P.; Klar, P.J.; Sander, T.; Reindl, C.; Benz, J.; Eickhoff, M.; Heiliger, C.; Heinemann, M. [1. Physics Institute, Justus-Liebig University of Giessen (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics (IEP), Otto-von-Guericke University Magdeburg (Germany); Shokovets, S. [Institute of Physics, Ilmenau University of Technology (Germany); Mueller, C.; Ronning, C. [Institute of Solid State Physics, Friedrich Schiller University Jena (Germany)

2012-08-15

Copper-oxide compound semiconductors provide a unique possibility to tune the optical and electronic properties from insulating to metallic conduction, from bandgap energies of 2.1 eV to the infrared at 1.40 eV, i.e., right into the middle of the efficiency maximum for solar-cell applications. Three distinctly different phases, Cu{sub 2}O, Cu{sub 4}O{sub 3}, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper. Their material properties as far as they are known by experiment or predicted by theory are reviewed. They are supplemented by new experimental results from thin-film growth and characterization, both will be critically discussed and summarized. With respect to devices the focus is on solar-cell performances based on Cu{sub 2}O. It is demonstrated by photoelectron spectroscopy (XPS) that the heterojunction system p-Cu{sub 2}O/n-AlGaN is much more promising for the application as efficient solar cells than that of p-Cu{sub 2}O/n-ZnO heterojunction devices that have been favored up to now. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

Directory of Open Access Journals (Sweden)

Mallory Mativenga

2012-09-01

Full Text Available Bias-induced charge migration in amorphous oxide semiconductor thin-film transistors (TFTs confirmed by overshoots of mobility after bias stressing dual gated TFTs is presented. The overshoots in mobility are reversible and only occur in TFTs with a full bottom-gate (covers the whole channel and partial top-gate (covers only a portion of the channel, indicating a bias-induced uneven distribution of ionized donors: Ionized donors migrate towards the region of the channel that is located underneath the partial top-gate and the decrease in the density of ionized donors in the uncovered portion results in the reversible increase in mobility.

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Science.gov (United States)

Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

2016-05-01

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

Surface characterization of low-temperature grown yttrium oxide

Science.gov (United States)

Krawczyk, Mirosław; Lisowski, Wojciech; Pisarek, Marcin; Nikiforow, Kostiantyn; Jablonski, Aleksander

2018-04-01

The step-by-step growth of yttrium oxide layer was controlled in situ using X-ray photoelectron spectroscopy (XPS). The O/Y atomic concentration (AC) ratio in the surface layer of finally oxidized Y substrate was found to be equal to 1.48. The as-grown yttrium oxide layers were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Y oxide surface was pre-sputtered by 3 kV argon ions, and the resulting AES-derived composition was found to be Y0.383O0.465C0.152 (O/Y AC ratio of 1.21). The SEM images revealed different surface morphology of sample before and after Ar sputtering. The oxide precipitates were observed on the top of un-sputtered Y oxide layer, whereas the oxide growth at the Ar ion-sputtered surface proceeded along defects lines normal to the layer plane. The inelastic mean free path (IMFP) characterizing electron transport was evaluated as a function of energy in the range of 0.5-2 keV from the EPES method. Two reference materials (Ni and Au) were used in these measurements. Experimental IMFPs determined for the Y0.383O0.465C0.152 and Y2O3 surface compositions, λ, were uncorrected for surface excitations and approximated by the simple function λ = kEp at electron energies E between 500 eV and 2000 eV, where k and p were fitted parameters. These values were also compared with IMFPs resulting from the TPP-2 M predictive equation for both oxide compositions. The fitted functions were found to be reasonably consistent with the measured and predicted IMFPs. In both cases, the average value of the mean percentage deviation from the fits varied between 5% and 37%. The IMFPs measured for Y0.383O0.465C0.152 surface composition were found to be similar to the IMFPs for Y2O3.

Profile of yttrium segregation in BaCe0,9Y0,1O3-δ as function of sintering temperature

International Nuclear Information System (INIS)

Hosken, C.M.; Souza, D.P.F. de

2010-01-01

Researches on solid oxide fuel cells indicate barium cerate perovskite as a very attractive material for using as electrolyte due to its high protonic conductivity. The objective of this work is investigate the yttrium segregation during sintering of BaCe 0,9 Y 0,1 O 3-δ doped with Zn O as a sintering aid. The powders were prepared by citrate process. Powders were isostatic pressed into pellets and sintered in air at 1200, 1275, 1325 and 1400 deg C. The samples were characterized by scanning electron microscopy, X-ray diffraction and impedance spectroscopy. Secondary phase containing Yttrium and Cerium was detected as sintering temperature increased. Increase of the lattice parameter and activation energy for electrical conductivity were also detected on samples sintered at 1400 deg C. (author)

Identification of the man-made barium copper silicate pigments among some ancient Chinese artifacts through spectroscopic analysis.

Science.gov (United States)

Li, Q H; Yang, J C; Li, L; Dong, J Q; Zhao, H X; Liu, S

2015-03-05

This article describes the complementary application of non-invasive micro-Raman spectroscopy and energy dispersive X-ray fluorescence spectrometry to the characterization of some ancient Chinese silicate artifacts. A total of 28 samples dated from fourth century BC to third century AD were analyzed. The results of chemical analysis showed that the vitreous PbO-BaO-SiO2 material was used to sinter these silicate artifacts. The barium copper silicate pigments including BaCuSi4O10, BaCuSi2O6 and BaCu2Si2O7 were widely identified from colorful areas of the samples by Raman spectroscopy. In addition, other crystalline phases such as Fe2O3, BaSi2O5, BaSO4, PbCO3 and quartz were also identified. The present study provides very valuable information to trace the technical evolution of man-made barium copper silicate pigments and their close relationship with the making of ancient PbO-BaO-SiO2 glaze and glass. Copyright © 2014 Elsevier B.V. All rights reserved.

Comprehensive review on the development of high mobility in oxide thin film transistors

Science.gov (United States)

Choi, Jun Young; Lee, Sang Yeol

2017-11-01

Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

KAUST Repository

Barbe, Jeremy; Tietze, Max Lutz; Neophytou, Marios; Banavoth, Murali; Alarousu, Erkki; El Labban, Abdulrahman; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F.; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

2017-01-01

Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a

Use of neutron diffraction in determining strains in high-temperaure superconducting composites

International Nuclear Information System (INIS)

Hitterman, R.L.; Faber, J. Jr.; Kupperman, D.S.; Singh, J.P.; Majumdar, S.

1990-01-01

The Argonne Intense Pulsed Neutron Source and General Purpose Powder Diffractometer have been used to study high T c metal oxide composites composed of yttrium barium copper oxide and silver. Neutron diffraction techniques were applied to composites with 15, 20 and 30% silver content by volume. The authors have observed that after hot pressing, the 30% Ag specimens contained both orthorhombic high T c and tetragonal, non-superconducting phases near the center of the specimens but only tetragonal near the surface. The relationship of shifts in Bragg peaks to strains of the constituents is discussed

Correlation between optical and structural properties of copper oxide electrodeposited on ITO glass

Energy Technology Data Exchange (ETDEWEB)

Messaoudi, O., E-mail: olfamassaoudi@gmail.com [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Makhlouf, H.; Souissi, A.; Ben assaker, I.; Karyaoui, M. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Bardaoui, A. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia); Physics department, Taif University (Saudi Arabia); Oueslati, M. [Unité de nano matériaux et photoniques, Faculté des Sciences de Tunis, ElManar1, 2092 Tunis (Tunisia); Chtourou, R. [Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole BorjCedria, B.P. 95, Hammammlif 2050 (Tunisia)

2014-10-25

Highlights: • Copper oxide films were grown by electrodeposition method with different applied potential. • Forouhi and Bloomer ellipsometric model were used. • Correlation between structural and optical proprieties was done. - Abstract: In this paper we study the growth of copper oxide (Cu{sub 2}O) thin films on indium tin oxide (ITO)-coated glass substrate by electrochemical deposition. We vary the applied potential from −0.50 to −0.60 V vs. Ag/AgCl in order to have a pure Cu{sub 2}O. The copper oxide thin films properties are obtained using Spectroscopic Ellipsometry (SE) in the frame of the Forouhi and Bloomer model. This model demonstrates that depending on the applied cathodic potential pure or mixed phases of CuO and Cu{sub 2}O can be obtained. Structural, morphological and optical properties are performed in order to confirm the SE results. X-ray diffraction analysis of the films reveals a mixed phase for a potential lower than −0.60V vs. Ag/AgCl while a high purity is obtained for this last potential. The optical band gap energy (E{sub g}) is evaluated using the tauc relation. Pure Cu{sub 2}O having a band gap of E{sub g} = 2.5 eV and a thickness around 900 nm are therefore successfully obtained with an applied potential of −0.60 V. Raman measurements show the characteristic modes of Cu{sub 2}O with a contribution of CuO modes at 618 cm{sup −1}. The intensity of the CuO modes decreases as the applied cathodic potential increases, leading to pure copper oxide layers.

Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

Energy Technology Data Exchange (ETDEWEB)

Waechtler, Thomas

2010-05-25

Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

Energy Technology Data Exchange (ETDEWEB)

Waechtler, Thomas

2010-05-25

Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

Amorphous carbon nanofibres inducing high specific capacitance of deposited hydrous ruthenium oxide

International Nuclear Information System (INIS)

Barranco, V.; Pico, F.; Ibanez, J.; Lillo-Rodenas, M.A.; Linares-Solano, A.; Kimura, M.; Oya, A.; Rojas, R.M.; Amarilla, J.M.; Rojo, J.M.

2009-01-01

Composites consisting of ruthenium oxide particles deposited on amorphous carbon nanofibres are prepared by a repetitive impregnation procedure. The choice of amorphous carbon nanofibres as support of amorphous ruthenium oxide leads to composites in which the deposited oxide consists of aggregates of extremely small primary particles (1-1.5 nm-size) and showing high porosity (specific surface area of 450 m 2 g -1 ). This special deposition of the oxide seems to favour: (i) high oxide capacitance (1000 Fg -1 ) at high oxide loadings (up to 20 wt%) and (ii) high capacitance retention (ca. 80% from the initial oxide capacitance) at high current densities (200 mA cm -2 ). Amorphous carbon nanofibres are suitable supports for amorphous ruthenium oxide and perhaps for other amorphous oxides acting as active electrode materials.

Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Energy Technology Data Exchange (ETDEWEB)

Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr [Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701 (Korea, Republic of)

2014-11-24

In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

International Nuclear Information System (INIS)

Jo, Kwang-Won; Cho, Won-Ju

2014-01-01

In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV ON ) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress

Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Ooi, P. K.; Ng, S. S.; Abdullah, M. J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

2015-04-24

Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

Study of thin metal films and oxide materials for nanoelectronics applications

OpenAIRE

De Los Santos Valladares, Luis

2012-01-01

Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

International Nuclear Information System (INIS)

Pantzas, Konstantinos; Patriarche, Gilles; Talneau, Anne; Youssef, Jamal Ben

2014-01-01

Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO 2 /amorphous-YIG bilayer is formed and welds the garnet to silicon.

Amorphous titanium-oxide supercapacitors

Science.gov (United States)

Fukuhara, Mikio; Kuroda, Tomoyuki; Hasegawa, Fumihiko

2016-10-01

The electric capacitance of an amorphous TiO2-x surface increases proportionally to the negative sixth power of the convex diameter d. This occurs because of the van der Waals attraction on the amorphous surface of up to 7 mF/cm2, accompanied by extreme enhanced electron trapping resulting from both the quantum-size effect and an offset effect from positive charges at oxygen-vacancy sites. Here we show that a supercapacitor, constructed with a distributed constant-equipment circuit of large resistance and small capacitance on the amorphous TiO2-x surface, illuminated a red LED for 37 ms after it was charged with 1 mA at 10 V. The fabricated device showed no dielectric breakdown up to 1,100 V. Based on this approach, further advances in the development of amorphous titanium-dioxide supercapacitors might be attained by integrating oxide ribbons with a micro-electro mechanical system.

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

Science.gov (United States)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

Barium oxide, calcium oxide, magnesia, and alkali oxide free glass

Science.gov (United States)

Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

2013-09-24

A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

Science.gov (United States)

Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

2018-01-01

We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.

Science.gov (United States)

Wong, Terence K S; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K

2016-04-07

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu₂O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of Al x Ga 1- x O onto thermal Cu₂O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu₂O nanopowder. CuO/Cu₂O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu₄O₃/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10 -2 %.

JPRS Report, Science & Technology Europe & Latin America

Science.gov (United States)

1988-03-18

detail because of the hybrid nature of the products, associating as they do chemical or biological substances on the one hand and electronic equipment... photoluminesc - ence. According to Thomson-CSF, this first develop- ment paves the way for three-color screens with up to 1,024 X 1,024 electrodes in...the perovskites family, with a base of lanthanum, yttrium, barium, and copper oxide (YBaCuO), do not lend themselves readily to wire draw- ing

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

Energy Technology Data Exchange (ETDEWEB)

Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-06-28

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Energy Technology Data Exchange (ETDEWEB)

Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)

2016-07-15

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

Obtainment of zirconium oxide and partially stabilized zirconium oxide with yttrium and rare earth oxides, from Brazilian zirconite, for ceramic aim

International Nuclear Information System (INIS)

Ribeiro, S.

1991-05-01

This work presents experimental results for processing of brazilian zirconite in order to obtain zirconium oxide with Yttrium and Rare Earth oxide by mutual coprecipitation for ceramics purposes. Due to analysis of experimental results was possible to obtain the optimum conditions for each one of technological route stage, such as: alkaline fusion; acid leaching; sulfactation and coprecipitation. (author)

Development of highly faceted reduced graphene oxide-coated copper oxide and copper nanoparticles on a copper foil surface

Directory of Open Access Journals (Sweden)

Rebeca Ortega-Amaya

2016-07-01

Full Text Available This work describes the formation of reduced graphene oxide-coated copper oxide and copper nanoparticles (rGO-Cu2ONPs, rGO-CuNPs on the surface of a copper foil supporting graphene oxide (GO at annealing temperatures of 200–1000 °C, under an Ar atmosphere. These hybrid nanostructures were developed from bare copper oxide nanoparticles which grew at an annealing temperature of 80 °C under nitrogen flux. The predominant phase as well as the particle size and shape strongly depend on the process temperature. Characterization with transmission electron microscopy and scanning electron microscopy indicates that Cu or Cu2O nanoparticles take rGO sheets from the rGO network to form core–shell Cu–rGO or Cu2O–rGO nanostructures. It is noted that such ones increase in size from 5 to 800 nm as the annealing temperature increases in the 200–1000 °C range. At 1000 °C, Cu nanoparticles develop a highly faceted morphology, displaying arm-like carbon nanorods that originate from different facets of the copper crystal structure.

Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

KAUST Repository

Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

2015-01-01

High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Science.gov (United States)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Sahoo, A.K.; Wu, G.M., E-mail: wu@mail.cgu.edu.tw

2016-04-30

In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm{sup 2}/V·s, 0.11 V/dec, 2.9 × 10{sup 8}, 1.1 × 10{sup 12} cm{sup −2} eV{sup −1} and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO{sub 2} prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm{sup 2}/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO{sub 2} used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Sahoo, A.K.; Wu, G.M.

2016-01-01

In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm"2/V·s, 0.11 V/dec, 2.9 × 10"8, 1.1 × 10"1"2 cm"−"2 eV"−"1 and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO_2 prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm"2/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO_2 used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

Directory of Open Access Journals (Sweden)

Anmar H. Shukur

2018-01-01

Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

Optical response of thin amorphous films to infrared radiation

Science.gov (United States)

Orosco, J.; Coimbra, C. F. M.

2018-03-01

We briefly review the electrical-optical response of materials to radiative forcing within the formalism of the Kramers-Kronig relations. A commensurate set of criteria is described that must be met by any frequency-domain model representing the time-domain response of a real (i.e., physically possible) material. The criteria are applied to the Brendel-Bormann (BB) oscillator, a model that was originally introduced for its fidelity at reproducing the non-Lorentzian peak broadening experimentally observed in the infrared absorption by thin amorphous films but has since been used for many other common materials. We show that the BB model fails to satisfy the established physical criteria. Taking an alternative approach to the model derivation, a physically consistent model is proposed. This model provides the appropriate line-shape broadening for modeling the infrared optical response of thin amorphous films while adhering strictly to the Kramers-Kronig criteria. Experimental data for amorphous alumina (Al2O3 ) and amorphous quartz silica (SiO2) are used to obtain model parametrizations for both the noncausal BB model and the proposed causal model. The proposed model satisfies consistency criteria required by the underlying physics and reproduces the experimental data with better fidelity (and often with fewer parameters) than previously proposed permittivity models.

Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

2017-04-15

The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Mani Menaka, S.; Umadevi, G.; Manickam, M.

2017-01-01

The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

Thermal annealing of amorphous Ti-Si-O thin films

OpenAIRE

Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

2008-01-01

International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals

Science.gov (United States)

Farmer, Joseph C [Tracy, CA; Wong, Frank M. G. [Livermore, CA; Haslam, Jeffery J [Livermore, CA; Yang, Nancy [Lafayette, CA; Lavernia, Enrique J [Davis, CA; Blue, Craig A [Knoxville, TN; Graeve, Olivia A [Reno, NV; Bayles, Robert [Annandale, VA; Perepezko, John H [Madison, WI; Kaufman, Larry [Brookline, MA; Schoenung, Julie [Davis, CA; Ajdelsztajn, Leo [Walnut Creek, CA

2009-11-17

A system for coating a surface comprises providing a source of amorphous metal, providing ceramic particles, and applying the amorphous metal and the ceramic particles to the surface by a spray. The coating comprises a composite material made of amorphous metal that contains one or more of the following elements in the specified range of composition: yttrium (.gtoreq.1 atomic %), chromium (14 to 18 atomic %), molybdenum (.gtoreq.7 atomic %), tungsten (.gtoreq.1 atomic %), boron (.ltoreq.5 atomic %), or carbon (.gtoreq.4 atomic %).

Oxidation of Alcohols by Ferric Nitrate in the Presence of Barium ...

African Journals Online (AJOL)

NJD

Oxidation, ferric nitrate, barium chloride, silica sulphuric acid, heterogeneous or solvent-free conditions. 1. Introduction ... economic advantage and environment protection. ... by TLC. After completion, structure of the product was charac-.

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

Science.gov (United States)

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

Photoluminescence properties of BaMoO4 amorphous thin films

International Nuclear Information System (INIS)

Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

2005-01-01

BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

Interactions between iron oxides and copper oxides under hydrothermal conditions

Energy Technology Data Exchange (ETDEWEB)

McGarvey, G B; Owen, D G

1995-08-01

Under hydrothermal conditions, magnetite and hematite have been shown to undergo interconversion reactions, the extent of which is controlled in part by the presence of copper oxides. In oxygenated water, the degree to which magnetite was oxidized to hematite was found to be dependent on the presence of CuO or Cu{sub 2}O. When these materials were absent, the oxidation of magnetite was limited by the dissolved oxygen in the aqueous system. Participation of the copper oxides in the oxidation process was confirmed by more complete conversion of magnetite was also influenced by the presence of the copper oxides. In addition to driving the reduction to completion, the presence of the copper oxides also exerted a strong influence over the morphology of the magnetite that formed. (author). 13 refs., 1 tab., 3 figs.

The production of UV Absorber amorphous cerium sulfide thin film

Energy Technology Data Exchange (ETDEWEB)

Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

2017-10-15

This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

Energy Technology Data Exchange (ETDEWEB)

Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

1991-03-01

In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

Effects of barium concentration on oropharyngeal swallow timing measures.

Science.gov (United States)

Stokely, Shauna L; Molfenter, Sonja M; Steele, Catriona M

2014-02-01

Videofluoroscopy is commonly used for evaluating oropharyngeal swallowing but requires radiopaque contrast (typically barium). Prior studies suggest that some aspects of swallowing, including timing measures of oral and pharyngeal bolus transit, vary depending on barium concentration. The aim of our study was to identify timing differences in healthy swallowing between "thin" (40 % w/v concentration) and "ultrathin" (22 % w/v concentration) barium solutions. Twenty healthy adults (Ten women; mean age = 31 years) each performed a series of three noncued 5-ml swallows each of ultrathin and thin liquid barium solutions in videofluoroscopy. Timing measures were compared between barium concentrations using a mixed-model ANOVA. The measures of interest were stage transition duration, pharyngeal transit time, and duration of upper esophageal sphincter opening. Significant differences were observed in the timing measures of swallowing with respect to barium concentration. In all cases, longer durations were seen with the higher barium concentration. Barium concentration influences timing parameters in healthy swallowing, even between ultrathin and thin concentrations. Clinicians need to understand and control for the impact of different barium stimuli on swallowing physiology.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Terence K. S. Wong

2016-04-01

Full Text Available The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O, cupric oxide (CuO and copper (III oxide (Cu4O3 is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

Science.gov (United States)

Wong, Terence K. S.; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K.

2016-01-01

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%. PMID:28773398

Structural and optical properties of electrodeposited molybdenum oxide thin films

International Nuclear Information System (INIS)

Patil, R.S.; Uplane, M.D.; Patil, P.S.

2006-01-01

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

Pulsed laser deposition of yttrium photocathode suitable for use in radio-frequency guns

Science.gov (United States)

Lorusso, A.; Trovò, M.; Demidovich, A.; Cinquegrana, P.; Gontad, F.; Broitman, E.; Chiadroni, E.; Perrone, A.

2017-12-01

Yttrium (Y) thin film was grown by pulsed laser deposition (PLD) on a copper (Cu) polycrystalline substrate. Ex situ morphological and structural characterisations of the circular Y film of 1.2 µm thickness and 3 mm diameter have shown a very low droplet density on the film surface and a crystalline feature with a preferred orientation along the Y (100) plane. Moreover, Y thin film resulted in being very adherent to the Cu substrate and more scratch resistant than Cu bulk. A twin thin film was deposited also on a Cu backflange of a radio-frequency (RF) gun to test the suitability of the metallic thin film as photocathode. It was observed that the Y-coated photocathode was characterised by a quantum efficiency ( QE) higher than that of the Cu bulk photocathode even if the presence of space charge effects didn't allow deriving the absolute maximum value of QE of Y photocathode.

Transition metal carbide nanocomposite and amorphous thin films

OpenAIRE

Tengstrand, Olof

2014-01-01

This thesis explores thin films of binary and ternary transition metal carbides, in the Nb-C, Ti-Si-C, Nb-Si-C, Zr-Si-C, and Nb-Ge-C systems. The electrical and mechanical properties of these systems are affected by their structure and here both nanocomposite and amorphous thin films are thus investigated. By appropriate choice of transition metal and composition the films can be designed to be multifunctional with a combination of properties, such as low electric resistivity, low contact res...

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Energy Technology Data Exchange (ETDEWEB)

Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-01-13

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

International Nuclear Information System (INIS)

Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

2014-01-01

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

Advances in copper-chalcopyrite thin films for solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

2010-01-15

Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

Development of p-type amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films and fabrication of pn hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022 (India); Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022 (India)

2014-07-01

Highlights: • Growth of p-type semiconducting amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films by co-sputtering. • Atomic percentage of Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films from the XPS analysis. • Variation of bandgap with boron concentration in Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films. • Demonstration of p–n hetero junctions fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au. - Abstract: Transparent conducting amorphous p type Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films were grown by RF magnetron co-sputtering at room temperature, using copper and boron targets in oxygen atmosphere. The structural, electrical as well as optical properties were studied. Composition of the films was analyzed by XPS. Amorphous structure of as deposited films was confirmed by GXRD. Surface morphology of the films was analyzed by AFM studies. p-Type nature and concentration of carriers were investigated by Hall effect measurement. Band gap of the films was found to increase with the atomic content of boron in the film. A p–n hetero junction using p-type Cu{sub 1−x}B{sub x}O{sub 2−δ} and n-type silicon was fabricated in the structure n-Si/p-Cu{sub 1−x}B{sub x}O{sub 2−δ}/Au which showed rectifying behavior. As deposited amorphous Cu{sub 1−x}B{sub x}O{sub 2−δ} thin films with lower carrier concentration can be used as a channel layer for thin film transistors.

Self-assembly of a tetrahedral 58-nuclear barium vanadium oxide cluster.

Science.gov (United States)

Kastner, Katharina; Puscher, Bianka; Streb, Carsten

2013-01-07

We report the synthesis and characterization of a molecular barium vanadium oxide cluster featuring high nuclearity and high symmetry. The tetrameric, 2.3 nm cluster H(5)[Ba(10)(NMP)(14)(H(2)O)(8)[V(12)O(33)](4)Br] is based on a bromide-centred, octahedral barium scaffold which is capped by four previously unknown [V(12)O(33)](6-) clusters in a tetrahedral fashion. The compound represents the largest polyoxovanadate-based heterometallic cluster known to date. The cluster is formed in organic solution and it is suggested that the bulky N-methyl-2-pyrrolidone (NMP) solvent ligands allow the isolation of this giant molecule and prevent further condensation to a solid-state metal oxide. The cluster is fully characterized using single-crystal XRD, elemental analysis, ESI mass spectrometry and other spectroscopic techniques.

On the use of hydrogen peroxide as a masking agent for the determination of yttrium in uranium oxide - yttrium oxide mixture

International Nuclear Information System (INIS)

Rastogi, R.K.; Chaudhuri, N.K.; Rizvi, G.H.; Subramanian, M.S.

1985-01-01

The use of peroxide as a masking agent for uranium during the EDTA titration of yttrium in an yttrium-uranium mixture containing large amounts of uranium was investigated. High acetate ion concentration was necessary to keep the peroxy complex of uranium in solution during the titration. It was observed that uranium could be tolerated up to 500 mg in the determination of yttrium with 0.5 ml of 30% hydrogen peroxide in approx. 1M acetate medium. The precision and accuracy of the method based on 16 determinations of yttrium at 6-16 mg level in the presence of 300 mg uranium was found to be +-0.2%. (author)

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Some peculiarities of thermoemission of the cathodes on the base of tanthanum and yttrium oxides

International Nuclear Information System (INIS)

Podgornyj, V.I.

1982-01-01

Thermoemission cathode characteristics on the basis of (La 2 O 3 ) lanthanum, and yttrium oxides which are used already in prctice but emission mechanism of which remains yet insufficiently elucidated, were investigated. It is shown that the heating of cathodes on the basis of Y 2 O 3 and La 2 O 3 at activation temperatures during 2-3 h with successive cooling results in the state of surface with increased thermoemission activity. It is established that the cathode heating in electric field of positive polarity results in decreasing thermoemission activity of lanthanum oxide by approximately 0.35 eV and for yttrium oxide - by approximately 0.05 eV as compared with the heating in the field of negative polarity. The effect obtained is related to the change in the metal adatom concentration on the cathode surface

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

Energy Technology Data Exchange (ETDEWEB)

Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

2014-07-21

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

Study on the CMP characteristics of a copper passivity layer formed by dipping in an oxidizer

International Nuclear Information System (INIS)

Choi, Youn-Ok; Lee, Woo-Sun; Choi, Gwon-Woo; Lee, Kang-Yeon; Kim, Nam-Oh

2011-01-01

Copper has been the material for ultra-large-scale integrated circuits owing to its excellent electromigration resistance and low electrical resistance. The polishing mechanism of metal chemical mechanical polishing (CMP) has been reported to be a repeated process of passive oxide layer formation through the use of on oxidizer and then the abrasion action of the slurry. However, because copper is softer and more sensitive to corrosion than tungsten, the slurry composition and the polishing mechanism during the copper CMP process may be more complicated. In a general Cu-CMP process, a mixture of an alumina-based slurry and an oxidizer in proper proportion is used in order to form a passive oxide layer such as CuO and CuO 2 . However, a conventional CMP process consumes an unnecessary amount of slurry to formed the passive layer. Therefore, in this paper, we propose a new method. The copper samples were oxidized by dipping in an oxidizer for an appropriate time to minimize the consumption of slurry before the CMP process. Then, we performed the CMP process. In order to compare the polishing characteristics of the copper thin film, we discuss the CMP removal rate and non-uniformity, as well as the microstructure of the surface and a layer cross-section based on a scanning.

Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

International Nuclear Information System (INIS)

Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

2013-01-01

Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

Electrochemical synthesis and characterization of copper (I oxide

Directory of Open Access Journals (Sweden)

Bugarinović Sanja J.

2009-01-01

Full Text Available The quest and need for clean and economical energy sources have increased interest in the development of thin film cells technologies. Electrochemical deposition is an attractive method for synthesis of thin films. It offers the advantages of low synthesis temperature, low cost and high purity. Copper (I oxide or cuprous oxide is an oxide semiconductor which is used as the anodic material in the form of thin film in lithium batteries and solar cells. The cathodic process of synthesis of cuprous oxide thin film is carried out in a potentiostatic mode from the organic electrolyte. The process parameters are chosen in that way to accomplish maximum difference between the potentials at which Cu2O and CuO are obtained. The electrochemical characterization was carried out by cyclic voltammetry. The electrodeposition techniques are particularly well suited for the deposition of single elements but it is also possible to carry out simultaneous depositions of several elements and syntheses of well-defined alternating layers of metals and oxides with thicknesses down to a few nm. Nanomaterials exhibit novel physical properties and play an important role in fundamental research. In addition, cuprous oxide is commonly used as a pigment, a fungicide, and an antifouling agent for marine paints. It is insoluble in water and organic solvents. This work presents the examinations of the influence of bath, temperature, pH and current density on the characteristics of electrochemically synthesized cuprous oxide. In the 'classic' process of synthesis, which is carried out under galvanostatic conditions on the anode, the grain size of the powder decreases with the increase in current density while the grain colour becomes lighter. The best commercial quality of the Cu2O (grain size, colour, content of choride was obtained at the temperature of 80°C, concentration of NaCl of 3 mol/dm3 and current density of 400 A/m2.

Preparation of photoelectrodes with spectral response in the visible without applied bias based on photochemically deposited copper oxide inside a porous titanium dioxide film

Energy Technology Data Exchange (ETDEWEB)

Vigil, Elena [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Gonzalez, Bernardo [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Zumeta, Inti [Institute of Materials-Physics Faculty, University of Havana, Colina Universitaria, C. Habana 10 400 (Cuba); Domingo, Concepcion [Institut de Ciencia de Materials de Barcelona (ICMAB), CSIC, 08290 Cerdanyola del Valles (Spain); Domenech, Xavier [Department of Chemistry, Universitat Autonoma de Barcelona, 08290 Cerdanyola del Valles (Spain); Ayllon, Jose A. [Department of Chemistry, Universitat Autonoma de Barcelona, 08290 Cerdanyola del Valles (Spain)]. E-mail: JoseAntonio.Ayllon@uab.es

2005-10-01

A soft and simple photochemical technique is proposed for the incorporation of copper oxide to nanoporous TiO{sub 2} with the purpose of sensitizing the TiO{sub 2} to wavelengths in the visible range. An aqueous solution of copper formate is employed as precursor. The light intensity value needed for the process, as well as its spectral range, is readily attainable with solar light. Because of the importance of heterojunctions of porous semiconductors in solar energy application, like extremely thin absorber solar cells, experimental conditions have been studied in order to obtain a thin absorption layer of copper oxide covering the TiO{sub 2}. Selection of copper formate solution concentration, irradiation time and previous immersion time in the precursor solution has been studied using X-ray diffraction, scanning electron microscopy and optical spectral transmission. Direction and wavelength dependence of photocurrent show that photons are absorbed by the copper oxide and electrons injected to the TiO{sub 2}.

Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

2016-10-15

Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

An ICP AES method for determination of dysprosium and terbium in high purity yttrium oxide

International Nuclear Information System (INIS)

Rupawate, V.H.; Hareendran, K.N.; Roy, S.B.

2011-01-01

High purity yttrium finds interesting application in astronavigation, luminescence, nuclear energy and metallurgical industries. Most of these applications require yttrium oxide of highest purity. Consequently there is a need for production of high purity yttrium oxide. Separation and purification of yttrium from other rare earths is a challenging task due to their close chemical properties. Liquid-liquid extraction and ion exchange have been widely used in the production of yttrium oxide of highest purity. Determination of impurities, especially other rare earths, in ppm level is required for process development and chemical characterization of the high purity Y 2 O 3 . Many methods have been described in literature. However since the advent of ICP AES much work in this area has been carried out by this technique. This paper describes the work done for determination of dysprosium (Dy) and terbium (Tb) in yttrium oxide using a high resolution sequential ICP AES. Emission spectra of rare earth elements are very complex and due to this complexity it is important to select spectral interference free analyte lines for determination of rare earths in rare earth matrix. For the determination of Dy and Tb in Y 2 O 3 , sensitive lines of Dy and Tb are selected from the instrument wavelength table and spectral interference free emission lines for the determination is selected by scanning around the selected wavelengths using 5 g/L Y solution and 5 mg/L standard solutions of Dy and Tb prepared in 4% nitric acid. It is found 353.170 nm line of Dy and 350.917 nm line Tb is suitable for quantitative determination. The signal to background ratio increases with increase in matrix concentration, i.e. from 1 to 5 mg/L. The optimum forward power is determined and it is found to be 1100W for Dy and 1000W for Tb. The instrument is calibrated using matrix matched standards containing 5g/L of Y matrix. Samples are dissolved in nitric acid and Y concentration is maintained at 5g/L. Two

Isolation and characterisation of barium sulphate and titanium oxides in monument crusts

Energy Technology Data Exchange (ETDEWEB)

Luis Perez-Rodriguez, Jose; Carmen Jimenez de Haro, Maria del; Maqueda, Celia

2004-10-25

Black crusts from historical ornamental materials contain Ba and Ti. These elements are in low proportion, making their determination difficult and especially the characterisation of the phases in which they are present. For this reason, works on the mineralogical composition of the two elements in black crusts is scarce. Thus the isolation, previous to their characterisation, is important for the study of the surface layer in altered monuments. An acid attack for the isolation of barium sulphate and titanium oxides in black crusts from polluted areas has been used. The acid employed is a mixture of HF, HNO{sub 3} and HClO{sub 4}. The residue isolated by acid attack was analysed by energy dispersive X-ray fluorescence and X-ray diffraction. It was characterised, and the percentages of barite (barium sulphate), anatase (titanium oxide), and rutile (titanium oxide) phases present in the surface layers were calculated.

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

2011-01-01

The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

2011-10-31

The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Gibbs energy calculation of electrolytic plasma channel with inclusions of copper and copper oxide with Al-base

Science.gov (United States)

Posuvailo, V. M.; Klapkiv, M. D.; Student, M. M.; Sirak, Y. Y.; Pokhmurska, H. V.

2017-03-01

The oxide ceramic coating with copper inclusions was synthesized by the method of plasma electrolytic oxidation (PEO). Calculations of the Gibbs energies of reactions between the plasma channel elements with inclusions of copper and copper oxide were carried out. Two methods of forming the oxide-ceramic coatings on aluminum base in electrolytic plasma with copper inclusions were established. The first method - consist in the introduction of copper into the aluminum matrix, the second - copper oxide. During the synthesis of oxide ceramic coatings plasma channel does not react with copper and copper oxide-ceramic included in the coating. In the second case is reduction of copper oxide in interaction with elements of the plasma channel. The content of oxide-ceramic layer was investigated by X-ray and X-ray microelement analysis. The inclusions of copper, CuAl2, Cu9Al4 in the oxide-ceramic coatings were found. It was established that in the spark plasma channels alongside with the oxidation reaction occurs also the reaction aluminothermic reduction of the metal that allows us to dope the oxide-ceramic coating by metal the isobaric-isothermal potential oxidation of which is less negative than the potential of the aluminum oxide.

Amorphous ITO thin films prepared by DC sputtering for electrochromic applications

International Nuclear Information System (INIS)

Teixeira, V.; Cui, H.N.; Meng, L.J.; Fortunato, E.; Martins, R.

2002-01-01

Indium-Tin-Oxide (ITO) thin films were deposited on glass substrates using DC magnetron reactive sputtering at different bias voltages and substrate temperatures. Some improvements were obtained on film properties, microstructure and other physical characteristics for different conditions. Amorphous and polycrystalline films can be obtained for various deposition conditions. The transmission, absorption, spectral and diffuse reflection of ITO films were measured in some ranges of UV-Vis-NIR. The refractive index (n), Energy band gap E g and the surface roughness of the film were derived from the measured spectra data. The carrier density (n c ) and the carrier mobility (μ) of the film micro conductive properties were discussed. The films exhibited suitable optical transmittance and conductivity for electrochromic applications

Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

OpenAIRE

Thiery, Nicolas; Naletov, Vladimir V.; Vila, Laurent; Marty, Alain; Brenac, Ariel; Jacquot, Jean-François; de Loubens, Grégoire; Viret, Michel; Anane, Abdelmadjid; Cros, Vincent; Youssef, Jamal Ben; Demidov, Vladislav E.; Demokritov, Sergej O.; Klein, Olivier

2017-01-01

We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\\approx 2$ eV, indicating that epitaxial YIG ultra-thin film...

Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

Energy Technology Data Exchange (ETDEWEB)

Mohammed, D.W., E-mail: DWM172@bham.ac.uk [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom); Waddingham, R.; Flewitt, A.J. [University of Cambridge, Electrical Engineering Division, Department of Engineering, J J Thomson Avenue, Cambridge CB3 0FA,United Kingdom (United Kingdom); Sierros, K.A. [West Virginia University, Mechanical & Aerospace Engineering, Morgantown, WV 26506 (United States); Bowen, J. [Open University, Department of Engineering and Innovation, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kukureka, S.N. [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom)

2015-11-02

Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates.

Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

International Nuclear Information System (INIS)

Mohammed, D.W.; Waddingham, R.; Flewitt, A.J.; Sierros, K.A.; Bowen, J.; Kukureka, S.N.

2015-01-01

Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates

Work function measurements of copper nanoparticle intercalated polyaniline nanocomposite thin films

Science.gov (United States)

Patil, U. V.; Ramgir, Niranjan S.; Bhogale, A.; Debnath, A. K.; Muthe, K. P.; Gadkari, S. C.; Kothari, D. C.

2017-05-01

The nature of contact between the electrode and the sensing material plays a crucial role in governing the sensing mechanism. Thin films of polyaniline (PANI) and copper-polyaniline nanocomposite (NC) have been deposited at room temperatures by in-situ oxidative polymerization of aniline in the presence of Cu nanoparticles. For sensing applications a thin film Au (gold) ˜100 nm is deposited and used as a conducting electrode. To understand the nature of contact (i.e., ohmic or Schottky) the work function of the conducting polyaniline and nanocomposite films were measured using Kelvin Probe method. I-V characteristics of PANI and NC films investigated at room temperatures further corroborates and confirms the formation of Ohmic contact as evident from work function measurements.

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Energy Technology Data Exchange (ETDEWEB)

Halindintwali, Sylvain; Knoesen, D.; Julies, B.A.; Arendse, C.J.; Muller, T. [University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Gengler, Regis Y.N.; Rudolf, P.; Loosdrecht, P.H.M. van [Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen (Netherlands)

2011-09-15

Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH{sub 4}/CH{sub 4}/H{sub 2} mixture at a substrate temperature below 400 C. Thermal annealing in an argon environment up to 900 C shows that the films crystallize as {mu}c-Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X-rays photoelectron spectroscopy we show that the films evolve from the amorphous SiH{sub x}/SiCH{sub 2} structure to nanocrystalline Si and SiC upon annealing at a temperature of 900 C. A strong RT photoluminescence peak of similar shape has been observed at around 420 nm in both as-deposited and annealed samples. Time-resolved luminescence measurements reveal that this peak is fast decaying with lifetimes ranging from 0.5 to {proportional_to}1.1 ns. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

Growth of amorphous TeOx (2≤x≤3) thin film by radio frequency sputtering

International Nuclear Information System (INIS)

Dewan, Namrata; Gupta, Vinay; Sreenivas, K.; Katiyar, R. S.

2007-01-01

Thin films of Tellurium oxide TeO x over a wide range of x (2 to 3) were prepared by radio frequency diode sputtering at room temperature on corning glass and quartz substrate. The deposited films are amorphous in nature and IR spectroscopy reveals the formation of Te-O bond. X-ray photoelectron spectroscopy shows the variation in the stoichiometry of TeO x film from x=2 to 3 with an increase in oxygen percentage (25 to 100%) in processing sputtering gas composition. Raman spectroscopy depicts the formation of TeO 3 trigonal pyramid besides TeO 4 disphenoid in the amorphous TeO x film with increase in the value of x. The varying stoichiometry of TeO x thin film (x=2 to 3) was found to influence the optical, electrical, and elastic properties. The optical band gap of film increases from 3.8 to 4.2 eV with increasing x and is attributed to the decrease in density. The elastic constants (C 11 and C 44 ) of the deposited films are lower than the corresponding value reported for TeO 2 single crystal

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Directory of Open Access Journals (Sweden)

Haiting Xie

2017-10-01

Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

Oxidation-assisted graphene heteroepitaxy on copper foil.

Science.gov (United States)

Reckinger, Nicolas; Tang, Xiaohui; Joucken, Frédéric; Lajaunie, Luc; Arenal, Raul; Dubois, Emmanuel; Hackens, Benoît; Henrard, Luc; Colomer, Jean-François

2016-11-10

We propose an innovative, easy-to-implement approach to synthesize aligned large-area single-crystalline graphene flakes by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality.

Properties of amorphous rare earth-transition metal thin films relevant to thermomagnetic recording

International Nuclear Information System (INIS)

Biesterbos, J.W.M.

1979-01-01

Properties of amorphous RE-(Fe, Co) thin films relevant to thermomagnetic recording are reviewed. Attention is paid to the writing-, reading- and erasure process. The advantages and disadvantages of the amorphous materials are considered. Experimental data on the writing process are given

Spark plasma sintering of tungsten-yttrium oxide composites from chemically synthesized nanopowders and microstructural characterization

International Nuclear Information System (INIS)

Yar, M.A.; Wahlberg, Sverker; Bergqvist, Hans; Salem, H.G.; Johnsson, Mats; Muhammed, Mamoun

2011-01-01

Nano-crystalline W-1%Y 2 O 3 (wt.%) powder was produced by a modified solution chemical reaction of ammonium paratungstate (APT) and yttrium nitrate. The precursor powder was found to consist of particles of bimodal morphology i.e. large APT-like particles up to 20 μm and rectangular yttrium containing ultrafine plates. After thermal processing tungsten crystals were evolved from W-O-Y plate like particles. spark plasma sintering (SPS) was used to consolidate the powder at 1100 and 1200 deg. C for different holding times in order to optimize the sintering conditions to yield high density but with reduced grain growth. Dispersion of yttrium oxide enhanced the sinterability of W powder with respect to lanthanum oxide. W-1%Y 2 O 3 composites with sub-micron grain size showed improved density and mechanical properties as compared to W-La 2 O 3 composites. Sample sintered in two steps showed improved density, due to longer holding time at lower temperature (900 deg. C) and less grain growth due to shorter holding time at higher temperature i.e. 1 min at 1100 deg. C.

On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

International Nuclear Information System (INIS)

Barhdadi, A.; Chafik El ldrissi, M.

2002-08-01

The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

Directory of Open Access Journals (Sweden)

Minkyu Chun

2015-05-01

Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

Science.gov (United States)

Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

2016-03-14

We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

Annealing experiments on and high-temperature behavior of the superconductor yttrium barium copper oxide (YBa2Cu3Ox)

NARCIS (Netherlands)

Brabers, V.A.M.; Jonge, de W.J.M.; Bosch, L.A.; Steen, van der C.; de Groote, A.M.W.; Verheyen, A.A.; Vennix, C.W.H.M.

1988-01-01

The high temperature behaviour (300–1100 K) of the superconductor YBa2Cu3Ox has been studied by annealing experiments, thermal dilatation, thermogravimetry and measurements of the electrical resistance and thermoelectric power. For the fast oxidation process of this compound, reaction enthalpies

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

Science.gov (United States)

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Optical waveguiding in amorphous tellurium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Nayak, Ranu; Gupta, Vinay; Dawar, A.L.; Sreenivas, K

2003-11-24

Optical waveguiding characteristics of amorphous TeO{sub 2-x} films deposited by reactive sputtering under different O{sub 2}:Ar gas mixtures are investigated on fused quartz and Corning glass substrates. Infra-red absorption band in the range 641-658 cm{sup -1} confirmed the formation of a Te-O bond, and a 20:80 O{sub 2}:Ar gas mixture ratio is found to be optimum for achieving highly uniform and transparent films at a high deposition rate. As grown amorphous films exhibited a large band gap (3.76 eV); a high refractive index value (2.042-2.052) with low dispersion over a wide wavelength range of 500-2000 nm. Optical waveguiding with low propagation loss of 0.26 dB/cm at 633 nm is observed on films subjected to a post-deposition annealing treatment at 200 deg. C. Packing density and etch rates have been determined and correlated with the lowering of optical propagation loss in the annealed films.

Crystallization kinetics of amorphous aluminum-tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

1999-01-01

Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

2014-10-15

We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Czech Academy of Sciences Publication Activity Database

Horák, Pavel; Bejšovec, Václav; Vacík, Jiří; Lavrentiev, Vasyl; Vrňata, M.; Kormunda, M.; Daniš, S.

2016-01-01

Roč. 389, DEC (2016), s. 751-759 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : Copper oxide * ion beam sputtering * Van der Pauw * nuclear reaction analysis * gas sensing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

An evaluation of absorption spectroscopy to monitor YBa2Cu3O7-x precursors for metal organics chemical vapor deposition processing

International Nuclear Information System (INIS)

Matthew Edward Thomas

1999-01-01

Absorption spectroscopy was evaluated as a technique to monitor the metal organics chemical vapor deposition (MOCVD) process for forming YBa 2 Cu 3 O 7-x superconducting coated conductors. Specifically, this study analyzed the feasibility of using absorption spectroscopy to monitor the MOCVD supply vapor concentrations of the organic ligand 2,2,6,6-tetramethyl-3,5-heptanedionate (TMHD) metal chelates of barium, copper, and yttrium. Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 compounds have successfully been vaporized in the MOCVD processing technique to form high temperature superconducting ''coated conductors,'' a promising technology for wire fabrication. The absorption study of the barium, copper, and yttrium (TMHD) precursors was conducted in the ultraviolet wavelength region from 200nm to 400nm. To simulate the MOCVD precursor flows the Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 complexes were vaporized at vacuum pressures of (0.03--10)Torr. Spectral absorption scans of each precursor were conducted to examine potential measurement wavelengths for determining vapor concentrations of each precursor via Beer's law. The experimental results show that under vacuum conditions the barium, copper, and yttrium (TMHD) precursors begin to vaporize between 90 C and 135 C, which are considerably lower vaporization temperatures than atmospheric thermal gravimetric analyses indicate. Additionally, complete vaporization of the copper and yttrium (TMHD) precursors occurred during rapid heating at temperatures between 145 C and 195 C and after heating at constant temperatures between 90 C and 125 C for approximately one hour, whereas the Ba(TMHD) 2 precursor did not completely vaporize. At constant temperatures, near constant vaporization levels for each precursor were observed for extended periods of time. Detailed spectroscopic scans at stable vaporization conditions were conducted

Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

Science.gov (United States)

Peng, Cheng-Jien

The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could

Characterization of copper oxides, iron oxides, and zinc copper ferrite desulfurization sorbents by X-ray photoelectron spectroscopy and scanning electron microscopy

Science.gov (United States)

Siriwardane, Ranjani V.; Poston, James A.

1993-05-01

Characterization of copper oxides, iron oxides, and zinc copper ferrite desulfurization sorbents was performed by X-ray photoelectron spectroscopy and scanning electron microscopy/energy-dispersive spectroscopy at temperatures of 298 to 823 K. Analysis of copper oxides indicated that the satellite structure of the Cu22p region was absent in the Cu(I) state but was present in the Cu(II) state. Reduction of CuO at room temperature was observed when the ion gauge was placed close to the sample. The satellite structure was absent in all the copper oxides at 823 K in vacuum. Differentiation of the oxidation state of copper utilizing both Cu(L 3M 4,5M 4,5) X-ray-induced Auger lines and Cu2p satellite structure, indicated that the copper in zinc copper ferrite was in the + 1 oxidation state at 823 K. This + 1 state of copper was not significantly changed after exposure to H 2, CO, and H 2O. There was an increase in Cu/Zn ratio and a decrease in Fe/Zn ratio on the surface of zinc copper ferrite at 823 K compared to that at room temperature. These conditions of copper offered the best sulfidation equilibrium for the zinc copper ferrite desulfurization sorbent. Analysis of iron oxides indicated that there was some reduction of both Fe 2O 3 and FeO at 823K. The iron in zinc copper ferrite was similar to that of Fe 2O 3 at room temperature but there was some reduction of this Fe(III) state to Fe(II) at 823 K. This reduction was more enhanced in the presence of H 2 and CO. Reduction to Fe(II) may not be desirable for the lifetime of the sorbent.

Suppression of Magnetoresistance in Thin WTe2 Flakes by Surface Oxidation.

Science.gov (United States)

Woods, John M; Shen, Jie; Kumaravadivel, Piranavan; Pang, Yuan; Xie, Yujun; Pan, Grace A; Li, Min; Altman, Eric I; Lu, Li; Cha, Judy J

2017-07-12

Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Surface oxides are known to impart Fermi level pinning or degrade the mobility on a number of different systems, including transition metal dichalcogenides and black phosphorus. Semimetallic WTe 2 exhibits large magnetoresistance due to electron-hole compensation; thus, Fermi level pinning in thin WTe 2 flakes could break the electron-hole balance and suppress the large magnetoresistance. We show that WTe 2 develops an ∼2 nm thick amorphous surface oxide, which shifts the Fermi level by ∼300 meV at the WTe 2 surface. We also observe a dramatic suppression of the magnetoresistance for thin flakes. However, due to the semimetallic nature of WTe 2 , the effects of Fermi level pinning are well screened and are not the dominant cause for the suppression of magnetoresistance, supported by fitting a two-band model to the transport data, which showed the electron and hole carrier densities are balanced down to ∼13 nm. However, the fitting shows a significant decrease of the mobilities of both electrons and holes. We attribute this to the disorder introduced by the amorphous surface oxide layer. Thus, the decrease of mobility is the dominant factor in the suppression of magnetoresistance for thin WTe 2 flakes. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials.

Effect of barium doping on the physical properties of zinc oxide ...

Indian Academy of Sciences (India)

2015-11-27

Home; Journals; Pramana – Journal of Physics; Volume 87; Issue 1. Effect of barium doping on the physical properties of zinc oxide ... Proceedings of the International Workshop/Conference on Computational Condensed Matter Physics and Materials Science (IWCCMP-2015). Posted on November 27, 2015. Guest Editors: ...

Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

2014-03-15

Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

High temperature oxidation of copper and copper aluminium alloys: Impact on furnace side wall cooling systems

Science.gov (United States)

Plascencia Barrera, Gabriel

The high temperature oxidation behaviours of copper and dilute Cu-Al alloys were investigated. Experiments were carried out by: (i) Oxidizing under various oxygen potentials at different temperatures using a combined TG-DTA apparatus. (ii) Oxidizing in a muffle furnace (in air) at different temperatures for extended periods of time. The oxidation mechanisms were evaluated based upon the kinetic data obtained as well as by X-ray diffraction and microscopical (SEM and optical) analyses. It was found that oxidation of copper strongly depends on the temperature. Two distinct mechanisms were encountered. Between 300 and 500°C, the oxidation rate is controlled by lateral growth of the oxide on the metal surface, whereas between 600 and 1000°C oxidation is controlled by lattice diffusion of copper ions through the oxide scale. On the other hand, the partial pressure of oxygen only has a small effect on the oxidation of copper. Alloy oxidation is also dependent on the temperature. As temperature increases, more aluminium is required to protect copper from being oxidized. It was shown that if the amount of oxygen that dissolves in the alloy exceeds the solubility limit of oxygen in copper, an internal oxidation layer will develop, leading to the formation of a tarnishing scale. On the other hand if the oxygen content in the alloy lies below the solubility limit of oxygen in copper, no oxidation products will form since a tight protective alumina layer will form on the alloy surface. Surface phenomena may affect the oxidation behaviour of dilute Cu-Al alloys. Immersion tests in molten copper matte and copper converting slag, using laboratory scale cooling elements with various copper based materials, were conducted. Results from these tests showed that alloying copper with 3 to 4 wt% Al decreases the oxidation rate of pure copper by 4 orders of magnitude; however due to a significant drop in thermal conductivity, the ability to extract heat is compromised, leading to

Comparison of the air oxidation behaviors of Zircaloy-4 implanted with yttrium and cerium ions at 500 deg. C

International Nuclear Information System (INIS)

Chen, X.W.; Bai, X.D.; Xu, J.; Zhou, Q.G.; Chen, B.S.

2002-01-01

As a valuable process for surface modification of materials, ion implantation is eminent to improve mechanical properties, electrochemical corrosion resistance and oxidation behaviors of varieties of materials. To investigate and compare the oxidation behaviors of Zircaloy-4, implantation of yttrium ion and cerium ion were respectively employed by using an MEVVA source at the energy of 40 keV with a dose ranging from 1x10 16 to 1x10 17 ions/cm 2 . Subsequently, weight gain curves of the different specimens including as-received Zircaloy-4 and Zircaloy-4 specimens implanted with the different ions were measured after oxidation in air at 500 deg. C for 100 min. It was obviously found that a significant improvement was achieved in the oxidation behaviors of implanted Zircaloy-4 compared with that of the as-received Zircaloy-4, and the oxidation behavior of cerium-implanted Zircaloy-4 was somewhat better than that of yttrium-implanted specimen. To obtain the valence and the composition of the oxides in the scale, X-ray photoemission spectroscopy was used in the present study. Glancing angle X-ray diffraction, employed to analyze the phase transformation in the oxide films, showed that the addition of yttrium transformed the phase from monoclinic zirconia to tetragonal zirconia, yet the addition of cerium transformed the phase from monoclinic zirconia to hexagonal zirconia. In the end, the mechanism of the improvement of the oxidation behavior was discussed

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

Science.gov (United States)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

Kinetics and mechanism of the low-temperature yttrium-aluminium garnet synthesis

International Nuclear Information System (INIS)

Ivakin, Yu.D.; Danchevskaya, M.N.; Yanchenko, P.A.; Murav'eva, G.P.

2000-01-01

Kinetics and formation mechanism of finely crystalline yttrium-aluminium garnet (YAG) during hydrothermal and hot steam treatment of stoichiometric mixture of oxides in the range of temperature 200-400 Deg C and pressures of 1.5-26 MPa were studied. It is ascertained that formation of YAG occurs via intermediate stage of Y(OH) 3 structure formation, whereas the aluminia component is X-ray amorphous. Kinetics of YAG formation is described by the equation of solid phase transformation with the limiting stage of nucleation. The YAG formed contains 7-5 % of water, which corresponds to hydrogarnet structure. Unit cell parameters of the YAG samples synthesized are somewhat high and after heating up to 1200 Deg C they decrease [ru

Kinetics of yttrium dissolution from waste ceramic dust

OpenAIRE

STOPIC SRECKO R.; FRIEDRIH BERND G.

2016-01-01

Yttrium is a silvery transition metal and has similar chemical properties to lanthanoids. Because of this similarity, yttrium belongs to rare earth elements. Ytttrium and yttrium oxide are mostly used in fluoroscent lamps, production of electrodes, in electronic filters, lasers, superconductors and as additives in various materials to improve their properties. Yttrium is mainly recovered from the minerals monazite [(Ce,La,Th,Nd,Y)PO4] and xenotime YPO4.The presence of radioactive elements suc...

Synthesis and characterization of Eichhornia-mediated copper oxide ...

Indian Academy of Sciences (India)

In this paper, we report the biosynthesis and characterization of copper oxide nanoparticles ... copper oxide nanoparticles by simple, cost-effective and ecofriendly method as an alternative to other available ... Currently, zinc oxide, gold, silver.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Directory of Open Access Journals (Sweden)

M. Morales-Masis

2014-09-01

Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Calculation of core loss and copper loss in amorphous/nanocrystalline core-based high-frequency transformer

Directory of Open Access Journals (Sweden)

Xiaojing Liu

2016-05-01

Full Text Available Amorphous and nanocrystalline alloys are now widely used for the cores of high-frequency transformers, and Litz-wire is commonly used as the windings, while it is difficult to calculate the resistance accurately. In order to design a high-frequency transformer, it is important to accurately calculate the core loss and copper loss. To calculate the core loss accurately, the additional core loss by the effect of end stripe should be considered. It is difficult to simulate the whole stripes in the core due to the limit of computation, so a scale down model with 5 stripes of amorphous alloy is simulated by the 2D finite element method (FEM. An analytical model is presented to calculate the copper loss in the Litz-wire, and the results are compared with the calculations by FEM.

Preparation of high purity yttrium single crystals by electrotransport

International Nuclear Information System (INIS)

Volkov, V.T.; Nikiforova, T.V.; Ionov, A.M.; Pustovit, A.N.; Sikharulidse, G.G.

1981-01-01

The possibility of obtaining yttrium crystals of high purity by the method of solid state electrotransport (SSE) was investigated in the present work. The behaviour of low contents of iron, aluminium, silicon, tantalum, copper, silver and vanadium as metallic impurities was studied using mass spectrometry. It is shown that all the impurities investigated, except copper, migrate to the anode. During electrotransfer a purification with respect to these impurities by a factor of 4 - 6 is obtained. It is proposed that the diffusion coefficients of the metallic impurities investigated are anomalously high and that the behaviour of the impurities during SSE in adapters necessitates further investigation. By using a three-stage process with intermediate removal of the anode end yttrium single crystals with a resistance ratio rho 293 /rhosub(4.2)=570 were produced. (Auth.)

Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

2015-03-15

Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

Superconducting oxide thin films by ion beam sputtering

International Nuclear Information System (INIS)

Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

1987-01-01

Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

EXAFS study of the stability of amorphous TbFe thin films

International Nuclear Information System (INIS)

Samant, M.G.; Marinero, E.E.; Robinson, C.; Cargill, G.S.

1989-01-01

This paper discusses the measurement of the local atomic structure of Fe in Au doped Tb-Fe thin film alloys by the use of EXAFS. The as deposited sample shows structural features which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure

Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

International Nuclear Information System (INIS)

Gosavi, S.R.; Deshpande, N.G.; Gudage, Y.G.; Sharma, Ramphal

2008-01-01

Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I-V curve with good electrical conductivity

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711 (Korea, Republic of); Kim, Yong-Sung [Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340 (Korea, Republic of)

2014-10-13

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Science.gov (United States)

Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

2018-03-01

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films

International Nuclear Information System (INIS)

Mhamdi, A.; Mimouni, R.; Amlouk, A.; Amlouk, M.; Belgacem, S.

2014-01-01

Highlights: • The sprayed Cu-doped ZnO thin layers films were well crystallised in hexagonal wurtzite phase. • Nanoncrystallites on clusters were observed whose density decreases especially at 2% Cu content. • This parallel circuit R–C represents the contribution of the grain boundaries delineating the oriented columnar microcrystallites along c-axis. - Abstract: Copper-doped zinc oxide thin films (ZnO:Cu) at different percentages (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Cu concentration on the structural, morphology and optical properties of the ZnO:Cu thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. The Film surface was analyzed by contact atomic force microscopy (AFM) in order to understand the effect of the doping on the surface structure. Doping by copper resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin layers. Finally, all results have been discussed in terms of the copper doping concentration

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

Science.gov (United States)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Development of a metrology method for composition and thickness of barium strontium titanate thin films

International Nuclear Information System (INIS)

Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

1998-01-01

Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

International Nuclear Information System (INIS)

Oh, Teresa

2014-01-01

The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10 -12 A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

Poole-Frenkel behavior in amorphous oxide thin-film transistors prepared on SiOC

Energy Technology Data Exchange (ETDEWEB)

Oh, Teresa [Cheongju University, Cheongju (Korea, Republic of)

2014-05-15

The electron behavior in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) depends on the polar characteristics of SiOC, which is used as a gate dielectric. The properties of the interface between the semiconductor and SiOC were defined by using a Schottky contact with a low potential barrier and Poole-Frenkel contacts with a high potential barrier. The leakage current of SiOC, which was used as a gate insulator, decreased at the Poole-Frenkel contacts because of the high potential barrier. The ambipolar properties in the field effect transistor were observed to depend on the various characteristics of SiOC, which ranged from its behaving as an ideal insulator or as a material with a high dielectric constant. The resistance of the a-IGZO channel changed from positive to negative at SiOC, which had the lowest polarity. As to the conduction due to the diffusion current, the mobility increased with increasing carrier concentrations. However, the drift carrier conduction was related to the reduced mobility at higher carrier concentrations. The performance of the transistors was enhanced by the tunneling and the diffusion currents Rather than by the drift current caused by trapping. The Schottky contact and the Poole-Frenkel (PF) contacts at an interface between the IGZO channel and the SiOC were defined according to the heights of potential barriers caused by the depletion layer. The leakage current was very low about 10{sup -12} A at SiOC with PF contacts because of the height of potential barrier was double that with a Schottky contact because the tunneling conductance due to the diffusion current originated from the PF contacts of non-polar SiOC.

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Migliorato, Piero [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA (United Kingdom)

2015-06-21

We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

Energy Technology Data Exchange (ETDEWEB)

Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2015-05-15

We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Science.gov (United States)

Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

2016-04-27

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

CVD synthesis of HTSC films using volatile coordination compounds

International Nuclear Information System (INIS)

Volkov, S.V.; Zub, V.Y.; Balakshina, O.N.; Mazurenko, E.A.

1995-01-01

Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c ∼10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed. (orig.)

Yttrium and lanthanum recovery from low cerium carbonate, yttrium carbonate and yttrium concentrate; Aproveitamento de itrio e lantanio de um carbonato de terras raras de baixo teor em cerio, de um carbonato de itrio e de um oxido de terras itricas

Energy Technology Data Exchange (ETDEWEB)

Vasconcelos, Mari Estela de

2006-07-01

In this work, separation, enrichment and purification of lanthanum and yttrium were performed using as raw material a commercial low cerium rare earth concentrate named LCC (low cerium carbonate), an yttrium concentrate named 'yttrium carbonate', and a third concentrated known as 'yttrium earths oxide. The first two were industrially produced by the late NUCLEMON - NUCLEBRAS de Monazita e Associados Ltda, using Brazilian monazite. The 'yttrium earths oxide' come from a process for preparation of lanthanum during the course of the experimental work for the present thesis. The following techniques were used: fractional precipitation with urea; fractional leaching of the LCC using ammonium carbonate; precipitation of rare earth peroxycarbonates starting from the rare earth complex carbonates. Once prepared the enriched rare earth fractions the same were refined using the ion exchange chromatography with strong cationic resin without the use of retention ion and elution using the ammonium salt of ethylenediaminetetraacetic acid. With the association of the above mentioned techniques were obtained pure oxides of yttrium (>97,7%), lanthanum (99,9%), gadolinium (96,6%) and samarium (99,9%). The process here developed has technical and economic viability for the installation of a large scale unity. (author)

Influence of deposition temperature and amorphous carbon on microstructure and oxidation resistance of magnetron sputtered nanocomposite Crsbnd C films

Science.gov (United States)

Nygren, Kristian; Andersson, Matilda; Högström, Jonas; Fredriksson, Wendy; Edström, Kristina; Nyholm, Leif; Jansson, Ulf

2014-06-01

It is known that mechanical and tribological properties of transition metal carbide films can be tailored by adding an amorphous carbon (a-C) phase, thus making them nanocomposites. This paper addresses deposition, microstructure, and for the first time oxidation resistance of magnetron sputtered nanocomposite Crsbnd C/a-C films with emphasis on studies of both phases. By varying the deposition temperature between 20 and 700 °C and alternating the film composition, it was possible to deposit amorphous, nanocomposite, and crystalline Crsbnd C films containing about 70% C and 30% Cr, or 40% C and 60% Cr. The films deposited at temperatures below 300 °C were X-ray amorphous and 500 °C was required to grow crystalline phases. Chronoamperometric polarization at +0.6 V vs. Ag/AgCl (sat. KCl) in hot 1 mM H2SO4 resulted in oxidation of Crsbnd C, yielding Cr2O3 and C, as well as oxidation of C. The oxidation resistance is shown to depend on the deposition temperature and the presence of the a-C phase. Physical characterization of film surfaces show that very thin C/Cr2O3/Crsbnd C layers develop on the present material, which can be used to improve the oxidation resistance of, e.g. stainless steel electrodes.

The rise of metal radionuclides in medical imaging: copper-64, zirconium-89 and yttrium-86.

Science.gov (United States)

Ikotun, Oluwatayo F; Lapi, Suzanne E

2011-04-01

Positron emission tomography, with its high sensitivity and resolution, is growing rapidly as an imaging technology for the diagnosis of many disease states. The success of this modality is reliant on instrumentation and the development of effective and novel targeted probes. Initially, research in this area was focused on what we will define in this article as 'standard' PET isotopes (carbon-11, nitrogen-13, oxygen-15 and fluorine-18), but the short half-lives of these isotopes limit radiopharmaceutical development to those that probe rapid biological processes. To overcome these limitations, there has been a rise in nonstandard isotope probe development in recent years. This review focuses on the biological probes and processes that have been examined, in additiom to the preclinical and clinical findings with nonstandard radiometals: copper-64, zirconium-89, and yttrium-86.

Altering properties of cerium oxide thin films by Rh doping

International Nuclear Information System (INIS)

Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

2015-01-01

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Reaction scheme of partial oxidation of methane to synthesis gas over yttrium-stabilized zirconia

NARCIS (Netherlands)

Zhu, J.J.; van Ommen, J.G.; Lefferts, Leonardus

2004-01-01

The partial oxidation of methane to synthesis gas over yttrium-stabilized zirconia (YSZ) was studied with in situ FTIR and both steady-state and transient experiments. The four major products, CO, H2, CO2, and H2O, are primary products of CPOM over YSZ. Besides these major products and traces of

Comparative proteomic analysis of the molecular responses of mouse macrophages to titanium dioxide and copper oxide nanoparticles unravels some toxic mechanisms for copper oxide nanoparticles in macrophages.

Directory of Open Access Journals (Sweden)

Sarah Triboulet

Full Text Available Titanium dioxide and copper oxide nanoparticles are more and more widely used because of their catalytic properties, of their light absorbing properties (titanium dioxide or of their biocidal properties (copper oxide, increasing the risk of adverse health effects. In this frame, the responses of mouse macrophages were studied. Both proteomic and targeted analyses were performed to investigate several parameters, such as phagocytic capacity, cytokine release, copper release, and response at sub toxic doses. Besides titanium dioxide and copper oxide nanoparticles, copper ions were used as controls. We also showed that the overall copper release in the cell does not explain per se the toxicity observed with copper oxide nanoparticles. In addition, both copper ion and copper oxide nanoparticles, but not titanium oxide, induced DNA strands breaks in macrophages. As to functional responses, the phagocytic capacity was not hampered by any of the treatments at non-toxic doses, while copper ion decreased the lipopolysaccharide-induced cytokine and nitric oxide productions. The proteomic analyses highlighted very few changes induced by titanium dioxide nanoparticles, but an induction of heme oxygenase, an increase of glutathione synthesis and a decrease of tetrahydrobiopterin in response to copper oxide nanoparticles. Subsequent targeted analyses demonstrated that the increase in glutathione biosynthesis and the induction of heme oxygenase (e.g. by lovastatin/monacolin K are critical for macrophages to survive a copper challenge, and that the intermediates of the catecholamine pathway induce a strong cross toxicity with copper oxide nanoparticles and copper ions.

Comparative proteomic analysis of the molecular responses of mouse macrophages to titanium dioxide and copper oxide nanoparticles unravels some toxic mechanisms for copper oxide nanoparticles in macrophages.

Science.gov (United States)

Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Collin-Faure, Véronique; Chevallet, Mireille; Diemer, Hélène; Gerdil, Adèle; Proamer, Fabienne; Strub, Jean-Marc; Habert, Aurélie; Herlin, Nathalie; Van Dorsselaer, Alain; Carrière, Marie; Rabilloud, Thierry

2015-01-01

Titanium dioxide and copper oxide nanoparticles are more and more widely used because of their catalytic properties, of their light absorbing properties (titanium dioxide) or of their biocidal properties (copper oxide), increasing the risk of adverse health effects. In this frame, the responses of mouse macrophages were studied. Both proteomic and targeted analyses were performed to investigate several parameters, such as phagocytic capacity, cytokine release, copper release, and response at sub toxic doses. Besides titanium dioxide and copper oxide nanoparticles, copper ions were used as controls. We also showed that the overall copper release in the cell does not explain per se the toxicity observed with copper oxide nanoparticles. In addition, both copper ion and copper oxide nanoparticles, but not titanium oxide, induced DNA strands breaks in macrophages. As to functional responses, the phagocytic capacity was not hampered by any of the treatments at non-toxic doses, while copper ion decreased the lipopolysaccharide-induced cytokine and nitric oxide productions. The proteomic analyses highlighted very few changes induced by titanium dioxide nanoparticles, but an induction of heme oxygenase, an increase of glutathione synthesis and a decrease of tetrahydrobiopterin in response to copper oxide nanoparticles. Subsequent targeted analyses demonstrated that the increase in glutathione biosynthesis and the induction of heme oxygenase (e.g. by lovastatin/monacolin K) are critical for macrophages to survive a copper challenge, and that the intermediates of the catecholamine pathway induce a strong cross toxicity with copper oxide nanoparticles and copper ions.

Elastic properties of amorphous thin films studied by Rayleigh waves

International Nuclear Information System (INIS)

Schwarz, R.B.; Rubin, J.B.

1993-01-01

Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni 1-x Zr x (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Energy Technology Data Exchange (ETDEWEB)

Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

2016-02-29

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

Oxidation kinetics of amorphous AlxZr1−x alloys

International Nuclear Information System (INIS)

Weller, K.; Wang, Z.M.; Jeurgens, L.P.H.; Mittemeijer, E.J.

2016-01-01

The oxidation kinetics of amorphous Al x Zr 1−x alloys (solid solution) has been studied as function of the alloy composition (0.26 ≤ x ≤ 0.68) and the oxidation temperature (350 °C ≤ T ≤ 400 °C; at constant pO 2  = 1 × 10 5  Pa) by a combinatorial approach using spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) depth profiling, transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. Thermal oxidation of the am-Al x Zr 1−x alloys results in the formation of an amorphous oxide overgrowth with a thermodynamically preferred singular composition, corresponding to a constant Al ox /Zr ox ratio of 0.5. Both the solubility and the diffusivity of oxygen in the am-Al x Zr 1−x alloy substrate increase considerably with increasing Zr content, in particular for Zr contents above 49 at.% Zr. Strikingly, the oxidation kinetics exhibit a transition from parabolic oxide growth kinetics for Al-rich am-Al x Zr 1−x alloys (x ≥ 0.51) to linear oxide growth kinetics for Zr-rich am-Al x Zr 1−x alloys (x < 0.35). The underlying oxidation mechanism is discussed. It is concluded that the oxidation kinetics of the amorphous Al x Zr 1−x alloys for 0.26 ≤ x ≤ 0.68 and 350 °C ≤ T ≤ 400 °C are governed by: (i) the atomic mobilities of O and Al in the alloy substrate at the reacting oxide/alloy interface, (ii) the solubility of O in the substrate and (iii) the compositional constraint due to the thermodynamically preferred formation of an amorphous oxide phase of singular composition.

Growing barium hexaferrite (BaFe{sub 12}O{sub 19}) thin films using chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Budiawanti, Sri, E-mail: awanty77@yahoo.com [Graduate Program of Materials Science, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Faculty of Teacher Training and Education, Sebelas Maret University (Indonesia); Soegijono, Bambang [Multiferroic Laboratory, Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia)

2016-04-19

Barium hexaferrite (BaFe{sub 12}O{sub 19}, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

Growing barium hexaferrite (BaFe_1_2O_1_9) thin films using chemical solution deposition

International Nuclear Information System (INIS)

Budiawanti, Sri; Soegijono, Bambang

2016-01-01

Barium hexaferrite (BaFe_1_2O_1_9, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysis indicates the isotropic nature of the films.

Plasma Deposition and Characterization of Copper-doped Cobalt Oxide Nanocatalysts

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Jacek TYCZKOWSKI

2013-09-01

Full Text Available A series of pure and copper-doped cobalt oxide films was prepared by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD. The effect of Cu-doping on the chemical structure and morphology of the deposited films was investigated. Raman and FTIR spectroscopies were used to characterize the chemical structure and morphology of the produced films. The bulk composition and homogeneity of the samples were investigated by energy dispersive X-ray microanalysis (EDX, and X-ray photoelectron spectroscopy (XPS was employed to assess the surface chemical composition of pure and doped materials. The obtained results permit to affirm that the PEMOCVD technique is a simple, versatile and efficient method for providing homogeneous layers of cobalt oxides with a different content of copper. It has been found that pure cobalt oxide films mainly contain Co3O4 in the form of nanoclusters whereas the films doped with Cu are much more complex, and CoOx (also Co3O4, mixed Co-Cu oxides and CuOx nanoclusters are detected in them. Preliminary catalytical tests show that Cu-doped cobalt oxide films allow to initiate catalytic combustion of n-hexane at a lower temperature compared to the pure cobalt oxide (Co3O4 films. From what has been stated above, the plasma-deposited thin films of Cu-doped cobalt oxides pave the way towards a new class of nanomaterials with interesting catalytic properties. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.2320

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

Science.gov (United States)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Spectrographic determination of impurities in copper and copper oxide

International Nuclear Information System (INIS)

Sabato, S.F.; Lordello, A.R.

1990-11-01

An emission spectrographic method for the determination of Al, Bi, Ca, Cd, Cr, Fe, Ge, Mg, Mn, Mo, Ni, Pb, Sb, Si, Sn and Zn in copper and copper oxide is described. Two mixtures (Graphite and ZnO: graphite and GeO sub(2)) were used as buffers. The standard deviation lies around 10%. (author)

CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

Directory of Open Access Journals (Sweden)

D. Santos-Cruz

Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

Process for making a titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition

Science.gov (United States)

Holcombe, C.E.; Dykes, N.L.

1992-04-28

A ceramic composition is described. The ceramic composition consists essentially of from about 84 to 96 w/o titanium diboride, from about 1 to 9 w/o chromium diboride, and from about 3 to about 15 w/o yttrium-titanium-oxide. A method of making the ceramic composition is also described. The method of making the ceramic composition comprises the following steps: Step 1--A consolidated body containing stoichiometric quantities of titanium diboride and chromium diboride is provided. Step 2--The consolidated body is enclosed in and in contact with a thermally insulated package of yttria granules having a thickness of at least 0.5 inches. Step 3--The consolidated body enclosed in the thermally insulated package of yttria granules is heated in a microwave oven with microwave energy to a temperature equal to or greater than 1,900 degrees centigrade to sinter and uniformly disperse yttria particles having a size range from about 1 to about 12 microns throughout the consolidated body forming a densified body consisting essentially of titanium diboride, chromium diboride, and yttrium-titanium-oxide. The resulting densified body has enhanced fracture toughness and hardness. No Drawings

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

International Nuclear Information System (INIS)

Hanyu, Yuichiro; Domen, Kay; Nomura, Kenji; Hiramatsu, Hidenori; Kamiya, Toshio; Kumomi, Hideya; Hosono, Hideo

2013-01-01

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H 2 O indicate that this threshold annealing temperature corresponds to depletion of H 2 O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested

Study of oxidation behaviour of Zr-based bulk amorphous alloy Zr 65 ...

Indian Academy of Sciences (India)

The oxidation behaviour of Zr-based bulk amorphous alloy Zr65Cu17.5Ni10Al7.5 has been studied in air environment at various temperatures in the temperature range 591–684 K using a thermogravimetric analyser (TGA). The oxidation kinetics of the alloy in the amorphous phase obeys the parabolic rate law for oxidation ...

Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

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Jin-Hyuk Kwon

2016-03-01

Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

Directory of Open Access Journals (Sweden)

Chenyang Shi

2017-09-01

Full Text Available Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accurate in situ structural studies for a wide range of materials.

Intrinsically water-repellent copper oxide surfaces; An electro-crystallization approach

Science.gov (United States)

Akbari, Raziyeh; Ramos Chagas, Gabriela; Godeau, Guilhem; Mohammadizadeh, Mohammadreza; Guittard, Frédéric; Darmanin, Thierry

2018-06-01

Use of metal oxide thin layers is increased due to their good durability under environmental conditions. In this work, the repeatable nanostructured crystalite Cu2O thin films, developed by electrodeposition method without any physical and chemical modifications, demonstrate good hydrophobicity. Copper (I) oxide (Cu2O) layers were fabricated on gold/Si(1 0 0) substrates by different electrodeposition methods i.e. galvanostatic deposition, cyclic voltammetry, and pulse potentiostatic deposition and using copper sulfate (in various concentrations) as a precursor. The greatest crystalline face on prepared Cu2O samples is (1 1 1) which is the most hydrophobic facet of Cu2O cubic structure. Indeed, different crystallite structures such as nanotriangles and truncated octahedrons were formed on the surface for various electrodeposition methods. The increase of the contact angle (θw) measured by the rest time, reaching to about 135°, was seen at different rates and electrodeposition methods. In addition, two-step deposition surfaces were also prepared by applying two of the mentioned methods, alternatively. In general, the morphology of the two-step deposition surfaces showed some changes compared to that of one-step samples, allowing the formation of different crystallite shapes. Moreover, the wettability behavior showd the larger θw of the two-step deposition layers compared to the related one-step deposition layers. Therefore, the highest observed θw was related to the one of two-step deposition layers due to the creation of small octahedral structures on the surface, having narrow and deep valleys. However, there was an exception which was due to the resulted big structures and broad valleys on the surface. So, it is possible to engineer different crystallites shapes using the proposed two-step deposition method. It is expected that hydrophobic crystallite thin films can be used in environmental and electronic applications to save energy and materials properties.

Barium contributions to the valence electronic structure of YBa2Cu3O7-δ, PrBa2Cu3O7-δ, and other barium-containing compounds

International Nuclear Information System (INIS)

Mueller, D.R.; Wallace, J.S.; Jia, J.J.; O'Brien, W.L.; Dong, Q.; Callcott, T.A.; Miyano, K.E.; Ederer, D.L.

1995-01-01

Monochromatic photon beams were used to excite barium N IV,V soft x-ray emission spectra from YBa 2 Cu 3 O 7-δ , PrBa 2 Cu 3 O 7-δ , BaF 2 , and BaTiO 3 . Near threshold excitation was used to demonstrate that small contributions to the barium N V and N IV emission spectra in the energy region above the 5p→4d core-core transitions do not arise as satellite emission from transitions in multiply excited atoms but rather occur as a result of transitions from the valence states. The emission spectrum of YBa 2 Cu 3 O 7-δ and PrBa 2 Cu 3 O 7-δ reveals a contribution to the electronic density of states at the barium site in the region near the Fermi level. The YBa 2 Cu 3 O 7-δ compound is a superconductor and PrBa 2 Cu 3 O 7-δ is an insulator. It has been proposed that the difference between them is due to mixing of praseodymium and barium among the sites occupied by yttrium and barium, with an accompanying change in electronic structure. However, our measurements indicate that the barium partial density of states for the two compounds are essentially identical

Mass synthesis of yttrium oxide nano-powders using radio frequency (RF) plasma

International Nuclear Information System (INIS)

Ghorui, S.; Sahasrabudhe, S.N.; Chakravarthy, Y.; Nagaraj, A.; Das, A.K.; Dhamale, G.

2014-01-01

Mass synthesis of nano-phase Yttrium Oxide (Y 2 O 3 ) from commercially available coarse grain powder is reported. Nano-sized high purity Y 2 O 3 is an important and critical constituent of ceramics like YAG (Yttrium aluminum garnet: Y 3 Al 5 O 12 ) for laser applications. The system is characterized in terms of its thermal and electrical behavior. Boltzmann plot technique is used to measure axial variation of temperature of the generated plasma. The synthesized particles are characterized in terms of XRD, SEM, TEM and BET analyses for qualification of the developed system. Major features observed are efficient conversion into nanometer-sized highly spherical particles, narrow size distribution, highly crystallite nature and highly pure phases. The particle distribution (from TEM) peaks within 20-30 nm. Average particle sizes determined from different methods like XRD, TEM and BET are very close to each other and point toward particle sizes within 20 to 30 nm

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

Science.gov (United States)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

Copper nanofiber-networked cobalt oxide composites for high performance Li-ion batteries

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Shim Hee-Sang

2011-01-01

Full Text Available Abstract We prepared a composite electrode structure consisting of copper nanofiber-networked cobalt oxide (CuNFs@CoO x . The copper nanofibers (CuNFs were fabricated on a substrate with formation of a network structure, which may have potential for improving electron percolation and retarding film deformation during the discharging/charging process over the electroactive cobalt oxide. Compared to bare CoO x thin-film (CoO x TF electrodes, the CuNFs@CoO x electrodes exhibited a significant enhancement of rate performance by at least six-fold at an input current density of 3C-rate. Such enhanced Li-ion storage performance may be associated with modified electrode structure at the nanoscale, improved charge transfer, and facile stress relaxation from the embedded CuNF network. Consequently, the CuNFs@CoO x composite structure demonstrated here can be used as a promising high-performance electrode for Li-ion batteries.

Amorphous and microcrystalline silicon applied in very thin tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Schicho, Sandra

2011-07-28

Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

Generation of amorphous ceramic capacitor coatings on titanium using a continuous sol-gel process

International Nuclear Information System (INIS)

Dixon, B.G.; Walsh, M.A. III; Phillips, P.G.; Morris, R.S.

1995-01-01

Thin amorphous films of ceramic capacitor materials were successfully deposited using sol-gel chemistry onto titanium wire using a continuous, computer controlled process. By repeatedly depositing and calcining very thin layers of material, smooth and even coats can be produced. Surface analyses revealed the layered nature of these thin coats, as well as the amorphous nature of the ceramic. The electrical properties of the better coatings, all composed of niobium, bismuth, zinc oxides, were then evaluated. copyright 1995 Materials Research Society

Electron diffraction on amorphous and crystalline AuAl2 , AuGa2 and AuIn2 thin films

International Nuclear Information System (INIS)

Bohorquez, A.

1991-01-01

Experimental (in situ) measurements of electron diffraction and resistivity of amorphous and crystalline AuAl 2 , AuGa 2 and AuIn 2 thin films were performed. Thin films were produced by quench condensation. Interference and atomic distribution functions were analyzed assuming the same short range order for the three systems in the amorphous phase. The experimental results do not agree with this assumption, giving evidence that the short range order is not the same for the three amorphous systems. Further discussion of interference and atomic distribution functions shows a more evident tendency in amorphous AuIn 2 where short order of AuIn 2 and In can be inferred. (Author)

Identification and roles of nonstoichiometric oxygen in amorphous Ta{sub 2}O{sub 5} thin films deposited by electron beam and sputtering processes

Energy Technology Data Exchange (ETDEWEB)

Mannequin, Cedric, E-mail: MANNEQUIN.Cedricromuald@nims.go.jp [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Tsuruoka, Tohru [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Hasegawa, Tsuyoshi [Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Aono, Masakazu [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2016-11-01

Highlights: • A detail study of the composition and morphology of amorphous tantalum oxide films obtained by electron-beam evaporation and radio-frequency sputtering is carried out. • The mechanisms for moisture absorption by tantalum oxides are proposed. • Deposition-dependent high oxygen stoichiometry of the films is revealed. • Formations of dangling bonds, hydroxyls groups and bidendate water bridges are identified to support the moisture absorption. - Abstract: The morphology and composition of tantalum oxide (Ta{sub 2}O{sub 5}) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta{sub 2}O{sub 5}-EB films was lower than that of the Ta{sub 2}O{sub 5}-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta{sub 2}O{sub 5}-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

Solid-State Electrochromic Device Consisting of Amorphous WO3 and Various Thin Oxide Layers

Science.gov (United States)

Shizukuishi, Makoto; Shimizu, Isamu; Inoue, Eiichi

1980-11-01

A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3\\cdotV2O5(50 wt.%). Some electrochromic characteristics of the a-WO3/Cr2O3\\cdotV2O5 ECD and the role of V2O5 were investigated.

Corrosion-electrochemical behaviour and mechanical properties ofaluminium alloy-321, alloyed by barium

International Nuclear Information System (INIS)

Ganiev, I.; Mukhiddinov, G.N.; Kargapolova, T.V.; Mirsaidov, U.

1995-01-01

The purpose of present work is studying of influence of barium additionson electrochemical corrosion of casting aluminium-copper alloy Al-321,containing as base alloying components copper, chromium, manganese, titanium,zirconium, cadmium

Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon

International Nuclear Information System (INIS)

Jacob, Wolfgang; Keudell, Achim von; Schwarz-Selinger, Thomas

2000-01-01

The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, an experimentally measured spectrum has to be simulated using the full formalism including the Kramers-Kronig relation. Infrared absorption spectra and the resulting k spectra in the range of the CH vibrational bands around 3000 cm -1 are presented for a variety of a-C:H layers. The shape and the total intensity of the peak are quite sensitive to the film structure. Soft, polymerlike hydrocarbon layers are characterized by a well structured, intense IR absorption band, while hard, amorphous, hydrogenated carbon layers exhibit a structureless, broad IR absorption band with relative low intensity. The k spectra of the CH vibrational bands can be considered as fingerprint for the type of a-C:H film. (author)

Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

Science.gov (United States)

Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

2017-08-01

In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

Physicochemical properties and ecotoxicological effects of yttrium oxide nanoparticles in aquatic media: Role of low molecular weight natural organic acids

International Nuclear Information System (INIS)

Zhang, Fan; Wang, Zhuang; Wang, Se; Fang, Hao; Chen, Mindong; Xu, Defu; Tang, Lili; Wang, Degao

2016-01-01

Understanding how engineered nanoparticles (ENPs) interact with natural organic acids is important to ecological risk assessment of ENPs, but this interaction remains poorly studied. Here, we investigate the dispersion stability, ion release, and toxicity of yttrium oxide nanoparticles (nY_2O_3) suspensions after exposure to two low molecular weight natural organic acids (LOAs), namely benzoic acid and gallic acid. We find that in the presence of LOAs the nY_2O_3 suspensions become more stable with surface zeta potential more positive or negative, accompanied by small agglomerated size. LOA interaction with nY_2O_3 is shown to promote the release of dissolved yttrium from the nanoparticles, depending on the concentrations of LOAs. Toxic effects of the nY_2O_3 suspensions incubated with LOAs on Scenedesmus obliquus as a function of their mixture levels show three types of signs: stimulation, inhibition, and alleviation. The mechanism of the effects of LOAs on the nY_2O_3 toxicity may be mainly associated with the degree of agglomeration, particle-induced oxidative stress, and dissolved yttrium. Our results stressed the importance of LOA impacts on the fate and toxicity of ENPs in the aquatic environment. - Highlights: • LOAs significantly increased aqueous stability of nY2O3 in a dose-dependent manner. • The presence of LOAs promoted dissolution of nY2O3 in a dose-dependent manner. • Toxicity of nY2O3 with LOAs to Scenedesmus obliquus varied with mixture levels. • Stimulation, inhibition, and alleviation effects of nY2O3 with LOAs were observed. • Mechanism may be driven by agglomeration, oxidative stress, and dissolved yttrium. - LOAs elevate the dispersion stability of nano-Y_2O_3, promote the release of dissolved yttrium, and alter the algal toxicity of nano-Y_2O_3.

Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

Science.gov (United States)

Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

2017-08-01

Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

Yttrium and rare earths separation by ion exchange resin

International Nuclear Information System (INIS)

Pinatti, D.G.; Ayres, M.J.G.; Ribeiro, S.; Silva, G.L.J.P.; Silva, M.L.C.P.; Martins, A.H.

1988-01-01

The experimental results of yttrium and rare earths separation from Brazilian xenotime are presented. The research consist in five stage: 1) Preparation of yttrium, erbium and lutetium standard solutions, from solubilization of pure oxides 2) yttrium and rare earths separation by ion exchange chromatrography 3) Separation and recovery of EDTA 4) Precipitation and calcination and 4) Analytical control of process. (C.G.C.) [pt

Synthesis and characterization of superconducting YBCO powder

International Nuclear Information System (INIS)

Praveen, B.; Karki, T.; Krishnamoorthi, J.

2008-01-01

Full text: Superconducting yttrium barium copper oxide power has been synthesized through solid state sintering method - milling and sintering - using Y 2 O 3 , BaCo 3 and CuO powders. XRD result of the milled and sintered powder reveals that the powder that has formed contains YBa 2 Cu 3 O 6.5 superconducting phase. Results obtained by SEM/EDAX show the distribution of the different elements. Experiments carried out by intermediate firing and final annealing in oxygen controlled atmosphere show the diffusion of oxygen in preformed YBa 2 Cu 3 O 6.5 and their results are discussed

Thermoanalytical study of the formation mechanism of yttria from yttrium acetate

International Nuclear Information System (INIS)

Farjas, J.; Camps, J.; Roura, P.; Ricart, S.; Puig, T.; Obradors, X.

2011-01-01

Highlights: → Thermal decomposition of yttrium acetate: three endothermic stages. → Intermediates: yttrium hydroxide and carbonate. → Product: cubic yttria (the degree of transformation is at least 99%). → The decomposition does not depend on the oxygen partial pressure. - Abstract: The processes involved in the thermal decomposition of yttrium acetate tetrahydrate, Y(CH 3 COO) 3 .4H 2 O, in air and in an inert atmosphere have been analyzed by thermoanalytical techniques (thermogravimetry, differential thermal analysis and evolved gas analysis) and by the structural characterization (X-ray diffraction, infrared spectroscopy, elemental analysis and scanning electron microscopy) of intermediates and final products. Decomposition of yttrium acetate is an endothermic transformation that takes place in a temperature range between 350 and 900 o C. The evolution of the mass during the decomposition process is not affected by the presence of oxygen. The process is initiated by the rupture of the bond between the metallic cation and the acetate ligand. This initial step (350-450 o C) involves the formation of amorphous yttrium hydroxide and yttrium carbonate and is characterized by a fast mass loss rate. A sudden decrease of the mass loss rate indicates a change in the decomposition kinetics that continues with the decomposition of yttrium hydroxide and yttrium carbonate. The main effect of an oxygen atmosphere is an intense exothermic process due to the combustion of organic species in the gas phase.

Effect of surface composition of yttrium-stabilized zirconia on partial oxidation of methane to synthesis gas.

NARCIS (Netherlands)

Zhu, J.J.; van Ommen, J.G.; Knoester, A.; Lefferts, Leonardus

2005-01-01

Catalytic partial oxidation of methane to synthesis gas (CPOM) over yttrium-stabilized zirconia (YSZ) was studied within a wide temperature window (500¿1100 °C). The catalysts were characterized by X-ray fluorescence (XRF) and low-energy ion scattering (LEIS). The influence of calcination

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

International Nuclear Information System (INIS)

Rebollo P, B.

2001-01-01

The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

Science.gov (United States)

Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

2017-12-01

The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

Science.gov (United States)

Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

2016-12-21

Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

Energy Technology Data Exchange (ETDEWEB)

Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

2017-04-15

Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

2013-01-01

UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

Processing and characterization of yttrium-stabilized zirconia thin films on polyimide from aqueous polymeric precursors

International Nuclear Information System (INIS)

Gorman, B.P.; Anderson, H.U.

2004-01-01

Low-temperature deposition of dense, nanocrystalline yttrium-stabilized zirconia (YSZ) thin films on polyimide (PI) substrates is illustrated using an aqueous polymeric precursor spin-coating technique. The polymeric precursor uses low-cost materials, is water-soluble and the viscosity and cation concentrations can be easily adjusted in order to vary the film thickness from 0.02 to 0.3 μm. Due to the use of water as the solvent in the YSZ precursor and the hydrophobic nature of the PI surface, surface modification processes were utilized in order to improve the wetting characteristics. Surface modification of PI substrates using wet chemical and oxygen plasma techniques led to a decrease in the precursor contact angle, and ultimately allowed for uniform film formation on both bulk and thin film PI substrates. Scanning electron microscopy, transmission electron microscopy and UV/Vis absorption illustrate that near full-density nanocrystalline thin films of YSZ can be produced at temperatures as low as 350 deg. C. Thermogravimetric analyses illustrate that the PI substrate does not undergo any weight loss up to these temperatures

Neutral barium cloud evolution at different altitudes

International Nuclear Information System (INIS)

Li Lei; Xu Ronglan

2002-01-01

Considering the joint effects of diffusion, collision, oxidation and photoionization, the authors study the evolution of the barium cloud at different altitudes in the space plasma active experiment. The results present the variation of the loss rate, number density distribution and brightness of the barium cloud over the range from 120 to 260 km. This can be divided into oxidation, oxidation plus photoionization and photoionization regions

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Science.gov (United States)

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

2011-09-20

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Energy Technology Data Exchange (ETDEWEB)

Jeong, Jaewook [School of Information and Communication Engineering, Chungbuk National University, Cheongju (Korea, Republic of); Kim, Joonwoo; Jeong, Soon Moon [Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of); Kim, Donghyun; Hong, Yongtaek, E-mail: yongtaek@snu.ac.kr [Department of Electrical and Communication Engineering, Seoul National University, Seoul (Korea, Republic of); Jeon, Heonsu [Department of Physics & Astronomy, Seoul National University, Seoul (Korea, Republic of)

2016-08-15

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

International Nuclear Information System (INIS)

Jeong, Jaewook; Kim, Joonwoo; Jeong, Soon Moon; Kim, Donghyun; Hong, Yongtaek; Jeon, Heonsu

2016-01-01

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

International Nuclear Information System (INIS)

Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

2000-01-01

Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Effect of yttrium doping on the dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} thin film produced by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Saji, Viswanathan S., E-mail: vssaji@chosun.ac.k [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of); Choe, Han Cheol [Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju-501-759 (Korea, Republic of)

2009-05-29

Pure and yttrium substituted CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x/} {sub 2} (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 {sup o}C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu{sub 3}Ti{sub 4-x}Y{sub x}O{sub 12-x} {sub /2} (x = 0.02) film at 1 KHz were k {approx} 2700 and tan {delta} {approx} 0.07.

Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

International Nuclear Information System (INIS)

Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

2015-01-01

Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

CERN Document Server

Jacob, W; Schwarz-Selinger, T

2000-01-01

The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Control of wettability of hydrogenated amorphous carbon thin films by laser-assisted micro- and nanostructuring

International Nuclear Information System (INIS)

Pfleging, Wilhelm; Kohler, Robert; Torge, Maika; Trouillet, Vanessa; Danneil, Friederike; Stueber, Michael

2011-01-01

A flexible and rapid surface functionalization of amorphous carbon films shows a great potential for various application fields such as biological surfaces and tribological systems. For this purpose, the combination of thin film deposition and subsequent laser material processing was investigated. Amorphous carbon layers doped with hydrogen were deposited on silicon wafers by reactive direct-current magnetron sputtering. Films with three different hydrogen contents were synthesized. Subsequent to the thin film deposition process, UV laser material processing at wavelengths of 193 nm or 248 nm was performed with respect to chemical surface modification and surface structuring on micro- and nanometer scale. Depending on structure size and laser-induced chemical surface modification the adjustment of the surface energy and wetting behaviour in a broad range from hydrophobic to hydrophilic was possible. The chemical modification and the ablation mechanisms near the ablation threshold were strongly influenced by the hydrogen content in amorphous carbon thin films. Structural and chemical information of the as-deposited and modified films was obtained by Raman spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements.

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300 °C exhibit good operation characteristics; while those annealed at ≥400 °C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430 °C. A plausible structural model is suggested.

Surface characteristics, copper release, and toxicity of nano- and micrometer-sized copper and copper(II) oxide particles: a cross-disciplinary study.

OpenAIRE

Midander, Klara; Cronholm, Pontus; Karlsson, Hanna L.; Elihn, Karine; Moller, Lennart; Leygraf, Christofer; Wallinder, Inger Odnevall

2009-01-01

An interdisciplinary and multianalytical research effort is undertaken to assess the toxic aspects of thoroughly characterized nano- and micrometer-sized particles of oxidized metallic copper and copper(II) oxide in contact with cultivated lung cells, as well as copper release in relevant media. All particles, except micrometer-sized Cu, release more copper in serum-containing cell medium (supplemented Dulbecco's minimal essential medium) compared to identical exposures in phosphate-buffered ...

Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

International Nuclear Information System (INIS)

Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

2001-08-01

In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

An XRF method for determination of common rare earth impurities in high purity yttrium oxide

International Nuclear Information System (INIS)

Dixit, R.M.; Deshpande, S.S.

1975-01-01

An XRF method for the estimation of Eu, Gd, Tb, Dy, Ho, Er and Yb in yttrium oxide has been developed. Samples are converted to yttrium oxalate and presented to the spectrometer in the form of pressed pellets. Philips PW-1220, a semi-automatic x-ray spectrometer, is used for the analysis. Line interference problems are studied for selecting analysis lines. For the elements except that of Yb, the lower estimation limit is 0.005% and for Yb, it is 0.01%. The average standard deviation is approximately 5% for various elements in the concentration range of 0.005% to 1.0%. The method has been tested for its accuracy by analysing synthesized samples with known composition at three different concentrations. (author)

Formation and structure of V-Zr amorphous alloy thin films

KAUST Repository

King, Daniel J M

2015-01-01

Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

Anticancer activity of Ficus religiosa engineered copper oxide nanoparticles

International Nuclear Information System (INIS)

Sankar, Renu; Maheswari, Ramasamy; Karthik, Selvaraju; Shivashangari, Kanchi Subramanian; Ravikumar, Vilwanathan

2014-01-01

The design, synthesis, characterization and application of biologically synthesized nanomaterials have become a vital branch of nanotechnology. There is a budding need to develop a method for environmentally benign metal nanoparticle synthesis, that do not use toxic chemicals in the synthesis protocols to avoid adverse effects in medical applications. Here, it is a report on an eco-friendly process for rapid synthesis of copper oxide nanoparticles using Ficus religiosa leaf extract as reducing and protecting agent. The synthesized copper oxide nanoparticles were confirmed by UV–vis spectrophotometer, absorbance peaks at 285 nm. The copper oxide nanoparticles were analyzed with field emission-scanning electron microscope (FE-SEM), Fourier transform infrared (FT-IR) spectroscopy, dynamic light scattering (DLS) and X-ray diffraction (XRD) spectrum. The FE-SEM and DLS analyses exposed that copper oxide nanoparticles are spherical in shape with an average particle size of 577 nm. FT-IR spectral analysis elucidates the occurrence of biomolecules required for the reduction of copper oxide ions. Zeta potential studies showed that the surface charge of the formed nanoparticles was highly negative. The XRD pattern revealed that synthesized nanoparticles are crystalline in nature. Further, biological activities of the synthesized nanoparticles were confirmed based on its stable anti-cancer effects. The apoptotic effect of copper oxide nanoparticles is mediated by the generation of reactive oxygen species (ROS) involving the disruption of mitochondrial membrane potential (Δψm) in A549 cells. The observed characteristics and results obtained in our in vitro assays suggest that the copper nanoparticles might be a potential anticancer agent. - Highlights: • Biogenic synthesis of copper oxide nanoparticles by leaf extract of Ficus religiosa • Characterized via UV–vis, FT-IR, DLS, FE-SEM with EDAX and XRD • Protein may act as an encapsulating, reducing and stabilizing

Anticancer activity of Ficus religiosa engineered copper oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sankar, Renu; Maheswari, Ramasamy; Karthik, Selvaraju [Department of Biochemistry, School of Life Sciences, Bharathidasan University, Tiruchirappalli 620 024, Tamilnadu (India); Shivashangari, Kanchi Subramanian, E-mail: shivashangari@gmail.com [Regional Forensic Science Laboratory, Tiruchirapalli, Tamilnadu (India); Ravikumar, Vilwanathan, E-mail: ravikumarbdu@gmail.com [Department of Biochemistry, School of Life Sciences, Bharathidasan University, Tiruchirappalli 620 024, Tamilnadu (India)

2014-11-01

The design, synthesis, characterization and application of biologically synthesized nanomaterials have become a vital branch of nanotechnology. There is a budding need to develop a method for environmentally benign metal nanoparticle synthesis, that do not use toxic chemicals in the synthesis protocols to avoid adverse effects in medical applications. Here, it is a report on an eco-friendly process for rapid synthesis of copper oxide nanoparticles using Ficus religiosa leaf extract as reducing and protecting agent. The synthesized copper oxide nanoparticles were confirmed by UV–vis spectrophotometer, absorbance peaks at 285 nm. The copper oxide nanoparticles were analyzed with field emission-scanning electron microscope (FE-SEM), Fourier transform infrared (FT-IR) spectroscopy, dynamic light scattering (DLS) and X-ray diffraction (XRD) spectrum. The FE-SEM and DLS analyses exposed that copper oxide nanoparticles are spherical in shape with an average particle size of 577 nm. FT-IR spectral analysis elucidates the occurrence of biomolecules required for the reduction of copper oxide ions. Zeta potential studies showed that the surface charge of the formed nanoparticles was highly negative. The XRD pattern revealed that synthesized nanoparticles are crystalline in nature. Further, biological activities of the synthesized nanoparticles were confirmed based on its stable anti-cancer effects. The apoptotic effect of copper oxide nanoparticles is mediated by the generation of reactive oxygen species (ROS) involving the disruption of mitochondrial membrane potential (Δψm) in A549 cells. The observed characteristics and results obtained in our in vitro assays suggest that the copper nanoparticles might be a potential anticancer agent. - Highlights: • Biogenic synthesis of copper oxide nanoparticles by leaf extract of Ficus religiosa • Characterized via UV–vis, FT-IR, DLS, FE-SEM with EDAX and XRD • Protein may act as an encapsulating, reducing and stabilizing

Disorder–order phase transformation in a fluorite-related oxide thin film: In-situ X-ray diffraction and modelling of the residual stress effects

International Nuclear Information System (INIS)

Gaboriaud, R.J.; Paumier, F.; Lacroix, B.

2016-01-01

This work is focused on the transformation of the disordered fluorite cubic-F phase to the ordered cubic-C bixbyite phase, induced by isothermal annealing as a function of the residual stresses resulting from different concentrations of microstructural defects in the yttrium oxide, Y_2O_3. This transformation was studied using in-situ X-ray diffraction and was modelled using Kolmogorov–Johnson–Mehl–Avrami (KJMA) analysis. The degree of the disorder of the oxygen network was associated with the residual stress, which was a key parameter for the stability and the kinetics of the transition of the different phases that were present in the thin oxide film. When the degree of disorder/residual stress level is high, this transition, which occurs at a rather low temperature (300 °C), is interpreted as a transformation of phases that occurs by a complete recrystallization via the nucleation and growth of a new cubic-C structure. Using the KJMA model, we determined the activation energy of the transformation process, which indicates that this transition occurs via a one-dimensional diffusion process. Thus, we present the analysis and modelling of the stress state. When the disorder/residual stress level was low, a transition to the quasi-perfect ordered cubic-C structure of the yttrium oxide appeared at a rather high temperature (800 °C), which is interpreted as a classic recovery mechanism of the cubic-C structure. - Highlights: • Rare earth oxide thin films • XRD analysis • Phase transformation modelling • Residual stress effects • Crystallographic phase stability

Disorder–order phase transformation in a fluorite-related oxide thin film: In-situ X-ray diffraction and modelling of the residual stress effects

Energy Technology Data Exchange (ETDEWEB)

Gaboriaud, R.J.; Paumier, F. [Institut Pprime, Department of Material Sciences, CNRS-University of Poitiers SP2MI-BP 30179, 86962 Futuroscope-Chasseneuil cedex (France); Lacroix, B. [CSIC, Institut de Ciencia de Materiales, University of Sevilla, Avenida Américo Vespucio, 49, 41092 Sevilla (Spain)

2016-02-29

This work is focused on the transformation of the disordered fluorite cubic-F phase to the ordered cubic-C bixbyite phase, induced by isothermal annealing as a function of the residual stresses resulting from different concentrations of microstructural defects in the yttrium oxide, Y{sub 2}O{sub 3}. This transformation was studied using in-situ X-ray diffraction and was modelled using Kolmogorov–Johnson–Mehl–Avrami (KJMA) analysis. The degree of the disorder of the oxygen network was associated with the residual stress, which was a key parameter for the stability and the kinetics of the transition of the different phases that were present in the thin oxide film. When the degree of disorder/residual stress level is high, this transition, which occurs at a rather low temperature (300 °C), is interpreted as a transformation of phases that occurs by a complete recrystallization via the nucleation and growth of a new cubic-C structure. Using the KJMA model, we determined the activation energy of the transformation process, which indicates that this transition occurs via a one-dimensional diffusion process. Thus, we present the analysis and modelling of the stress state. When the disorder/residual stress level was low, a transition to the quasi-perfect ordered cubic-C structure of the yttrium oxide appeared at a rather high temperature (800 °C), which is interpreted as a classic recovery mechanism of the cubic-C structure. - Highlights: • Rare earth oxide thin films • XRD analysis • Phase transformation modelling • Residual stress effects • Crystallographic phase stability.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Catalytic selective reduction of NO with ethylene over a series of copper catalysts on amorphous silicas

International Nuclear Information System (INIS)

Carniti, P.; Gervasini, A.; Modica, V.H.; Ravasio, N.

2000-01-01

Catalytic selective reduction of NO to N 2 was studied comparing a series of Cu-based catalysts (ca. 8wt.%) supported over amorphous pure and modified silicas: SiO 2 , SiO 2 -Al 2 O 3 , SiO 2 -TiO 2 , SiO 2 -ZrO 2 . The catalysts were prepared by the chemisorption-hydrolysis method which ensured the formation of a unique copper phase well dispersed over all supports, as confirmed by scanning electron micrographs (SEMs). Temperature-programmed reduction (TPR) analyses confirmed the presence of dispersed copper species which underwent complete reduction at a temperature of about 220C, independently of the support. It was found that the support affects the extent of NO reduction as well as the selectivity to N 2 formation. Maximum N 2 yield was found in the range 275-300C. The catalyst prepared over SiO 2 -Al 2 O 3 was the most active and selective with respect to the other silicas. Competitiveness factors (c.f.'s) as high as 13-20% in the temperature range 200-250C could be calculated. For all catalysts, the temperature of the N 2 peak maximum did not correspond to that of the maximum C 2 H 4 oxidation to CO 2 , suggesting the presence of two different sites for the oxidation and the reduction activity. On the catalyst prepared on SiO 2 -Al 2 O 3 , a kinetic interpretation of catalytic data collected at different contact times and temperatures permitted evaluating the ratio between kinetic coefficients as well as the difference between activation energies of NO reduction by C 2 H 4 and C 2 H 4 oxidation by O 2

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

Science.gov (United States)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Copper contamination in thin stainless steel sheet

International Nuclear Information System (INIS)

Holbert, R.K. Jr.; Dobbins, A.G.; Bennett, R.K. Jr.

1986-01-01

The standard welding technique used at Oak Ridge Y-12 Plant for joining thin stainless sheet is the gas tungsten arc (GTA) welding process. One of the reoccurring problems with the sheet welds is surface cracking in the heat-affected zone (HAZ). Metallography shows that the cracks are only about 0.05 mm (0.002 in.) deep which is significant in a 0.25 mm (0.01 in.) thick sheet. Thus, welding requirements do not permit any surfacing cracking as detected by a fluorescent dye penetrant test conducted on every part after welding. Surface cracks have been found in both of the two most common weld designs in the thin sheet fabricated at the Oak Ridge Y-12 Plant. These butt joints are welded between two 0.25 mm thick stainless steel sheets and a tube with eyelet welded to a 25 mm (0.98 in.) thick sheet. The weld between the two sheets is made on a semiautomatic seam welding unit, whereas the tube-to-eyelet-to-sheet welds are done manually. The quality of both welds is very dependent on the welding procedure and the way the parts are placed in the weld fixturing. Metallographic examination has indicated that some welded parts with surface cracking in the weld region had copper particles on the surface, and the question of copper contamination has been raised. With the aid of a scanning electron microscope and an electron microprobe, the existence of copper in an around the surface cracks has been verified. The copper is on the surface of the parts prior to welding in the form of small dust particles

Amorphous structure of iron oxide of bacterial origin

Energy Technology Data Exchange (ETDEWEB)

Hashimoto, Hideki; Fujii, Tatsuo [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Kohara, Shinji [Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198 (Japan); Asaoka, Hiroshi [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Kusano, Yoshihiro [Department of Fine and Applied Arts, Kurashiki University of Science and the Arts, Kurashiki, Okayama 712-8505 (Japan); Ikeda, Yasunori [Research Institute for Production Development, Sakyo-ku, Kyoto 606-0805 (Japan); Nakanishi, Makoto [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Benino, Yasuhiko; Nanba, Tokuro [Graduate School of Environmental Science, Okayama University, Okayama 700-8530 (Japan); Takada, Jun, E-mail: jtakada@cc.okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); JST, CREST, Okayama 700-8530 (Japan)

2012-12-14

In nature, there are various iron oxides produced by the water-habitant bacterial group called 'iron-oxidizing bacteria'. These iron oxides have been studied mainly from biological and geochemical perspectives. Today, attempts are made to use such iron oxides as novel functional materials in several applications. However, their quantitative structural characteristics are still unclear. We studied the structure of iron oxide of microtubular form consisting of amorphous nanoparticles formed by an iron-oxidizing bacterium, Leptothrix ochracea, using a combination of high-energy X-ray diffraction and reverse Monte Carlo simulation. We found that its structure consists of a framework of corner- and edge-sharing distorted FeO{sub 6} octahedral units, while SiO{sub 4} tetrahedral units are isolated in the framework. The results reveal the atomic arrangement of iron oxide of bacterial origin, which is essential for investigating its potential as a functional material. -- Highlights: Black-Right-Pointing-Pointer The amorphous structure of bacterial iron oxide was investigated. Black-Right-Pointing-Pointer The structure was simulated by high-energy X-ray diffraction and reverse Monte Carlo simulation. Black-Right-Pointing-Pointer The structure was constructed of a framework of corner- and edge-sharing distorted FeO{sub 6} octahedral units. Black-Right-Pointing-Pointer SiO{sub 4} tetrahedral units were distributed isolatedly in the framework of FeO{sub 6} octahedral units.

Copper Recovery from Yulong Complex Copper Oxide Ore by Flotation and Magnetic Separation

Science.gov (United States)

Han, Junwei; Xiao, Jun; Qin, Wenqing; Chen, Daixiong; Liu, Wei

2017-09-01

A combined process of flotation and high-gradient magnetic separation was proposed to utilize Yulong complex copper oxide ore. The effects of particle size, activators, Na2S dosage, LA (a mixture of ammonium sulfate and ethylenediamine) dosage, activating time, collectors, COC (a combination collector of modified hydroxyl oxime acid and xanthate) dosage, and magnetic intensity on the copper recovery were investigated. The results showed that 74.08% Cu was recovered by flotation, while the average grade of the copper concentrates was 21.68%. Another 17.34% Cu was further recovered from the flotation tailing by magnetic separation at 0.8 T. The cumulative recovery of copper reached 91.42%. The modifier LA played a positive role in facilitating the sulfidation of copper oxide with Na2S, and the combined collector COC was better than other collectors for the copper flotation. This technology has been successfully applied to industrial production, and the results are consistent with the laboratory data.

Yttrium silicate as an oxidation protection layer for C/C-SiC materials. Synthesis, electrophoretic deposition and high temperature oxidation; Yttriumsilikat als Oxidationsschutzschicht fuer C/C-SiC-Werkstoffe. Synthese, elektrophoretische Abscheidung und Hochtemperaturoxidation

Energy Technology Data Exchange (ETDEWEB)

Grosse-Brauckmann, Jana

2012-07-01

Carbon fibre reinforced carbon composites are promising materials for high temperature applications. They exhibit excellent thermal shock resistance and nearly constant mechanical strength. A serious draw-back of this material is their poor resistivity towards oxidation at temperatures above 400 C. To make use of the very good thermal stability the material needs an outer oxidation protection coating. Silicon carbide has been successfully employed at temperatures up to 1300 C. To increase the application range towards higher temperatures an outer environmental barrier coating is needed. In the present work yttrium silicates were used to complement the silicon carbide coated carbon fibre reinforced carbon material. Both stable compounds in the quasi-binary system Y{sub 2}O{sub 3}-SiO{sub 2}, yttrium orthosilicate (Y{sub 2}SiO{sub 5}) and yttrium pyrosilicate (Y{sub 2}Si{sub 2}O{sub 7}), were separately applied to the test samples via electrophoretic deposition. Suitable suspensions were prepared in butanone with iodine as charging agent to adjust conductivity and particle charge. Galvanostatic deposition obeys a linear growth law for the selected deposition times. Alternatively the feasibility of direct electrophoretic deposition from an yttrium silicate precursor sol was tested. Emphasis was put on the development of a suitable sol-system based on alkoxide precursors. Samples coated either with Y{sub 2}SiO{sub 5} or Y{sub 2}Si{sub 2}O{sub 7} were investigated using thermogravimetric high temperature oxidation in the temperature range from 1450 C to 1650 C, respectively. The coated samples exhibited very good oxidation resistance up to temperatures of 1600 C, while the performance was reduced at 1650 C to a few hours. All samples showed a parabolic mass increase with time indicating a diffusion limited process governing the oxidation kinetics. The cross sections of the samples show a sharp border between the SiO{sub 2} that crystallizes to cristobalite and the

Surface studies of YBa2Cu3O7-x -matching oxide substrates and interfaces

International Nuclear Information System (INIS)

Enevold Thaulov Andersen, J.

1990-11-01

Crystallographic changes as a result of heat-treatment at 700-900 deg. C are found for SrTiO 3 (100), MgO(100) and LaAlO 3 (100). The p(2x2) reconstruction of the SrTiO 3 (100) and the superstructures on MgO(100) and on LaAlO 3 (100) thus observed are suggested to be induced by segregation of impurities to the surface. The surface charge-effects which disturb electron- and photon-impact experiments with these insulators are removed by heat-treatments. Deposition of copper results in formation of copper islands on SrTiO 3 (100) and on LaAlO 3 (100). Yttrium forms islands on LaAlO 3 (100) and grows in a layer-by-layer mode on SrTiO 3 (100) and on MgO(100). An yttrium 1x1 epitaxy is observed on the MgO(100) surface, which is suggested to be an YO superstructure. Oxidation of the 1x1 Y/MgO(100) systems diminishes the charge-effects and improves all diffraction and spectroscopic measurements. This may be due to the formation of metallic states around the Fermi level when the film is oxidized. An in situ synthesized YBa 2 Cu 3 O 7 thin film on SrTiO 3 (100) compared to a thick epitaxial YBa 2 Cu 3 O 7-x (001) film on MgO(100) reveals differences in surface electronic structures but not in surface stoichiometries. (au) 18 refs

Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

International Nuclear Information System (INIS)

Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

2002-01-01

The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

Universal medium-range order of amorphous metal oxides.

Science.gov (United States)

Nishio, Kengo; Miyazaki, Takehide; Nakamura, Hisao

2013-10-11

We propose that the structure of amorphous metal oxides can be regarded as a dual-dense-random-packing structure, which is a superposition of the dense random packing of metal atoms and that of oxygen atoms. Our ab initio molecular dynamics simulations show that the medium-range order of amorphous HfO2, ZrO2, TiO2, In2O3, Ga2O3, Al2O3, and Cu2O is characterized by the pentagonal-bipyramid arrangement of metal atoms and that of oxygen atoms, and prove the validity of our dual-random-sphere-packing model. In other words, we find that the pentagonal medium-range order is universal independent of type of metal oxide.