Evaluation of atomic layer deposited alumina as a protective layer for domestic silver articles: Anti-corrosion test in artificial sweat

Science.gov (United States)

Park, Suk Won; Han, Gwon Deok; Choi, Hyung Jong; Prinz, Fritz B.; Shim, Joon Hyung

2018-05-01

This study evaluated the effectiveness of alumina fabricated by atomic layer deposition (ALD) as a protective coating for silver articles against the corrosion caused by body contact. An artificial sweat solution was used to simulate body contact. ALD alumina layers of varying thicknesses ranging from 20 to 80 nm were deposited on sputtered silver samples. The stability of the protective layer was evaluated by immersing the coated samples in the artificial sweat solution at 25 and 35 °C for 24 h. We confirmed that a sufficiently thick layer of ALD alumina is effective in protecting the shape and light reflectance of the underlying silver, whereas the uncoated bare silver is severely degraded by the artificial sweat solution. Inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy were used for in-depth analyses of the chemical stability of the ALD-coated silver samples after immersion in the sweat solution.

Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200 °C

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Farzad Sadeghi-Tohidi

2014-01-01

Full Text Available The fatigue properties of ultrathin protective coatings on silicon thin films were investigated. The cohesive and delamination fatigue properties of 22 nm-thick atomic-layered-deposited (ALD titania were characterized and compared to that of 25 nm-thick alumina. Both coatings were deposited at 200 °C. The fatigue rates are comparable at 30 °C, 50% relative humidity (RH while they are one order of magnitude larger for alumina compared to titania at 80 °C, 90% RH. The improved fatigue performance is believed to be related to the improved stability of the ALD titania coating with water compared to ALD alumina, which may in part be related to the fact that ALD titania is crystalline, while ALD alumina is amorphous. Static fatigue crack nucleation and propagation was not observed. The underlying fatigue mechanism is different from previously documented mechanisms, such as stress corrosion cracking, and appears to result from the presence of compressive stresses and a rough coating–substrate interface.

Structural, optical and mechanical properties of amorphous and crystalline alumina thin films

Energy Technology Data Exchange (ETDEWEB)

Nayar, Priyanka [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Khanna, Atul, E-mail: akphysics@yahoo.com [Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Kabiraj, D.; Abhilash, S.R. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Beake, Ben D.; Losset, Yannick [Micro Materials Limited, Unit 3, Wrexham Technology Park, Wrexham LL13 7YP (United Kingdom); Chen, Banghao [Chemistry and Biochemistry Department, Florida State University, Tallahassee 32306 (United States)

2014-10-01

Thin films of amorphous alumina of thickness 350 nm were deposited on fused silica substrates by electron beam evaporation. Amorphous films were annealed at several temperatures in the range: 400–1130 °C and changes in film crystallinity, short-range structure, optical and mechanical properties were studied. X-ray diffraction studies found that crystallization starts at 800 °C and produces γ and δ-alumina, the latter phase grows with heat treatment and the sample was mostly δ and θ-alumina after annealing at 1130 °C. The as-deposited amorphous alumina films have low hardness of 5 to 8 GPa, which increases to 11 to 12 GPa in crystalline sample. {sup 27}Al Magic Angle Spinning Nuclear Magnetic Resonance was used to study the short-range order of amorphous and crystalline alumina films and it was found that amorphous alumina film contains AlO{sub 5} and AlO{sub 4} structural units in the ratio of 1:2. The concentration of AlO{sub 5} was significantly suppressed in crystalline film, which contains 48% of Al{sup 3+} ions in AlO{sub 6}, 7% in AlO{sub 5} and 45% in AlO{sub 4} units. - Highlights: • Structure–property correlations in alumina films grown by electron-beam evaporation • Amorphous films crystallize into γ and δ-alumina on annealing in air at 800 °C. • δ and θ-alumina films are stable up to 1130 °C and do not transform to α-phase. • Amorphous alumina films contain {sup [5]}Al and {sup [4]}Al structural units in the ratio of 1:2. • {sup [5]}Al decreases whereas {sup [6]}Al concentration increases on crystallization.

Porous Alumina Films with Width-Controllable Alumina Stripes

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Huang Shi-Ming

2010-01-01

Full Text Available Abstract Porous alumina films had been fabricated by anodizing from aluminum films after an electropolishing procedure. Alumina stripes without pores can be distinguished on the surface of the porous alumina films. The width of the alumina stripes increases proportionally with the anodizing voltage. And the pores tend to be initiated close to the alumina stripes. These phenomena can be ascribed to the electric field distribution in the alumina barrier layer caused by the geometric structure of the aluminum surface.

Porous Alumina Films with Width-Controllable Alumina Stripes

Science.gov (United States)

2010-01-01

Porous alumina films had been fabricated by anodizing from aluminum films after an electropolishing procedure. Alumina stripes without pores can be distinguished on the surface of the porous alumina films. The width of the alumina stripes increases proportionally with the anodizing voltage. And the pores tend to be initiated close to the alumina stripes. These phenomena can be ascribed to the electric field distribution in the alumina barrier layer caused by the geometric structure of the aluminum surface. PMID:21170406

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

Science.gov (United States)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

Science.gov (United States)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Experimentally validated dispersion tailoring in a silicon strip waveguide with alumina thin-film coating

DEFF Research Database (Denmark)

Guo, Kai; Christensen, Jesper Bjerge; Shi, Xiaodong

2018-01-01

We propose a silicon strip waveguide structure with alumina thin-film coating in-between the core and the cladding for group-velocity dispersion tailoring. By carefully designing the core dimension and the coating thickness, a spectrally-flattened near-zero anomalous group-velocity dispersion...

Disruption of an Alumina Layer During Sintering of Aluminium in Nitrogen

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Pieczonka T.

2017-06-01

Full Text Available Aluminium oxide layer on aluminium particles cannot be avoided. However, to make the metal-metal contacts possible, this sintering barrier has to be overcome in some way, necessarily to form sintering necks and their development. It is postulated that the disruption of alumina layer under sintering conditions may originate physically and chemically. Additionally, to sinter successfully non alloyed aluminium powder in nitrogen, the operation of both types mechanism is required. It is to be noted that metallic aluminium surface has to be available to initiate reactions between aluminium and the sintering atmosphere, i.e. mechanical disruption of alumina film precedes the chemical reactions, and only then chemically induced mechanisms may develop. Dilatometry, gravimetric and differential thermal analyses, and microstructure investigations were used to study the sintering response of aluminium at 620°C in nitrogen, which is the only sintering atmosphere producing shrinkage.

Sustained, Controlled and Stimuli-Responsive Drug Release Systems Based on Nanoporous Anodic Alumina with Layer-by-Layer Polyelectrolyte

Science.gov (United States)

Porta-i-Batalla, Maria; Eckstein, Chris; Xifré-Pérez, Elisabet; Formentín, Pilar; Ferré-Borrull, J.; Marsal, Lluis F.

2016-08-01

Controlled drug delivery systems are an encouraging solution to some drug disadvantages such as reduced solubility, deprived biodistribution, tissue damage, fast breakdown of the drug, cytotoxicity, or side effects. Self-ordered nanoporous anodic alumina is an auspicious material for drug delivery due to its biocompatibility, stability, and controllable pore geometry. Its use in drug delivery applications has been explored in several fields, including therapeutic devices for bone and dental tissue engineering, coronary stent implants, and carriers for transplanted cells. In this work, we have created and analyzed a stimuli-responsive drug delivery system based on layer-by-layer pH-responsive polyelectrolyte and nanoporous anodic alumina. The results demonstrate that it is possible to control the drug release using a polyelectrolyte multilayer coating that will act as a gate.

Mullite-alumina functionally gradient ceramics

International Nuclear Information System (INIS)

Pena, P.; Bartolome, J.; Requena, J.; Moya, J.S.

1993-01-01

Cracks free mullite-alumina Functionally Gradient Ceramics (FGC) have been obtained by sequential slip casting of Mullite-alumina slurries with different mullite/alumina ratios. These slurries were prepared with 65 % solids content and viscosities ranging from 10 to 40 mPa.s. The presence of cracks perpendicular to the FGC layers have been attributed to residual stresses developed because of the mismatch in thermal expansion between layers. The microstructure of the different layers, and de residual stress value σ R in each layer was also determined. (orig.)

On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

International Nuclear Information System (INIS)

Pan, Dongqing; Ma, Lulu; Xie, Yuanyuan; Yuan, Chris; Jen, Tien Chien

2015-01-01

Alumina thin film is typically studied as a model atomic layer deposition (ALD) process due to its high dielectric constant, high thermal stability, and good adhesion on various wafer surfaces. Despite extensive applications of alumina ALD in microelectronics industries, details on the physical and chemical processes are not yet well understood. ALD experiments are not able to shed adequate light on the detailed information regarding the transient ALD process. Most of current numerical approaches lack detailed surface reaction mechanisms, and their results are not well correlated with experimental observations. In this paper, the authors present a combined experimental and numerical study on the details of flow and surface reactions in alumina ALD using trimethylaluminum and water as precursors. Results obtained from experiments and simulations are compared and correlated. By experiments, growth rate on five samples under different deposition conditions is characterized. The deposition rate from numerical simulation agrees well with the experimental results. Details of precursor distributions in a full cycle of ALD are studied numerically to bridge between experimental observations and simulations. The 3D transient numerical model adopts surface reaction kinetics and mechanisms based on atomic-level studies to investigate the surface deposition process. Surface deposition is shown as a strictly self-limited process in our numerical studies. ALD is a complex strong-coupled fluid, thermal and chemical process, which is not only heavily dependent on the chemical kinetics and surface conditions but also on the flow and material distributions

Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

International Nuclear Information System (INIS)

Costa e Silva, Danilo Lopes

2015-01-01

In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

Systematic study of the ion beam mixing of oxide markers into alumina

International Nuclear Information System (INIS)

Cooper, E.A.; Kung, H.; Nastasi, M.

1995-01-01

The study of ion beam mixing of layered compositions is important in two regards: first, there is the potential of alloying the layers into a new functionally different composition and, secondly, from a fundamental aspect, it is important be able to anticipate the potential damage due to degradation of the layer structure that could be caused in these materials due to a radiation environment. The authors have completed a systematic study of ion beam mixing of thin marker layers into amorphous alumina. The degree of mixing was found to be controlled by thermodynamic factors, the nature of the marker (oxidation state), and matrix crystallinity. Ballistic mixing was observed for all markers, but the mixing of some oxide markers exhibits a thermally activated regime at higher temperatures. The experiments were conducted from a low temperature of -170 C to a maximum temperature of 75O C. 210 keV Ar was used to ion beam mix the marker layer at the various temperatures. The marker spreading was analyzed using RBS. The mixing of one marker (Fe 2 O 3 ) into crystalline alumina (sapphire) was compared to that of the amorphous alumina. It was found that the marker mixed asymmetrically into the two matrix materials, with a higher degree of mixing into the amorphous matrix. TEM cross-section results verify that there is a preference for the marker to mix into the amorphous alumina layer preferentially to the crystalline layer. The interest in ion beam mixing of marker layers in ceramic systems is motivated by the fact that layered oxides are technologically important materials for fusion reactor applications

Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

International Nuclear Information System (INIS)

Stoldt, Conrad R; Bright, Victor M

2006-01-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

Investigating the effect of sputtering conditions on the physical properties of aluminum thin film and the resulting alumina template

Science.gov (United States)

Taheriniya, Shabnam; Parhizgar, Sara Sadat; Sari, Amir Hossein

2018-06-01

To study the alumina template pore size distribution as a function of Al thin film grain size distribution, porous alumina templates were prepared by anodizing sputtered aluminum thin films. To control the grain size the aluminum samples were sputtered with the rate of 0.5, 1 and 2 Å/s and the substrate temperature was either 25, 75 or 125 °C. All samples were anodized for 120 s in 1 M sulfuric acid solution kept at 1 °C while a 15 V potential was being applied. The standard deviation value for samples deposited at room temperature but with different rates is roughly 2 nm in both thin film and porous template form but it rises to approximately 4 nm with substrate temperature. Samples with the average grain size of 13, 14, 18.5 and 21 nm respectively produce alumina templates with an average pore size of 8.5, 10, 15 and 16 nm in that order which shows the average grain size limits the average pore diameter in the resulting template. Lateral correlation length and grain boundary effect are other factors that affect the pore formation process and pore size distribution by limiting the initial current density.

Ordered Nanomaterials Thin Films via Supported Anodized Alumina Templates

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Mohammed eES-SOUNI

2014-10-01

Full Text Available Supported anodized alumina template films with highly ordered porosity are best suited for fabricating large area ordered nanostructures with tunable dimensions and aspect ratios. In this paper we first discuss important issues for the generation of such templates, including required properties of the Al/Ti/Au/Ti thin film heterostructure on a substrate for high quality templates. We then show examples of anisotropic nanostructure films consisting of noble metals using these templates, discuss briefly their optical properties and their applications to molecular detection using surface enhanced Raman spectroscopy. Finally we briefly address the possibility to make nanocomposite films, exemplary shown on a plasmonic-thermochromic nanocomposite of VO2-capped Au-nanorods.

Grazing incidence x-ray diffraction analysis of zeolite NaA membranes on porous alumina tubes.

Science.gov (United States)

Kyotani, Tomohiro

2006-07-01

Zeolite NaA-type membranes hydrothermally synthesized on porous alumina tubes, for dehydration process, were characterized by grazing incidence 2 theta scan X-ray diffraction analysis (GIXRD). The fine structure of the membrane was studied fractionally for surface layer and for materials embedded in the porous alumina tube. The thickness of the surface layer on the porous alumina tube in the membranes used in this study was approximately 2-3 microm as determined from transmission electron microscopy with focused ion beam thin-layer specimen preparation technique (FIB-TEM). To discuss the effects of the membrane surface morphology on the GIXRD measurements, CaA-type membrane prepared by ion exchange from the NaA-type membrane and surface-damaged NaA-type membrane prepared by water leaching were also studied. For the original NaA-type membrane, 2 theta scan GIXRD patterns could be clearly measured at X-ray incidence angles (alpha) ranging from 0.1 to 2.0 deg in increments of 0.1 deg. The surface layers of the 2 - 3 microm on the porous alumina tube correspond to the alpha values up to ca. 0.2 deg. For the CaA-type and the surface-damaged NaA-type membranes, however, diffraction patterns from the surface layer could not be successfully detected and the others were somewhat broad. For all the three samples, diffraction intensities of both zeolite and alumina increased with depth (X-ray incidence angle, alpha) in the porous alumina tube region. The depth profile analysis of the membranes based on the GIXRD first revealed that amount of zeolite crystal embedded in the porous alumina tube is much larger than that in the surface layer. Thus, the 2 theta scan GIXRD is a useful method to study zeolite crystal growth mechanism around (both inside and outside) the porous alumina support during hydrothermal synthesis and to study water permeation behavior in the dehydration process.

The characterization of thin platinum films on alumina

International Nuclear Information System (INIS)

Altman, E.I.; Gorte, R.J.

1987-01-01

Industrial metal catalysts are usually in the form of small metal particles supported on a porous oxide. The typical size of these metal particles ranges between 1.0 and 10.0 nm and it is well known that the particle size and the oxide substrate can affect the catalytic properties of the metal for some important reactions. Previous work with adsorption on small particles has indicated that desorption temperatures and the ability to dissociate CO can also be affected by the particle size. To further investigate these size and substrate effects, the authors have examined the adsorption properties of several simple gases on small Pt particles supported on alumina using temperature programmed desorption (TPD). The author show that the desorption curves for CO, H/sub 2/, and NO on these particles are very similar to curves measured on single crystals. The details of sample preparation and characterization have been described previously. Samples were prepared by vapor depositing Pt onto an alumina substrate which was formed by exposing an Al film to O/sub 2/. Auger electron spectroscopy was used to monitor surface cleanliness and to characterize the growth of the Pt on the substrate. As reported previously, the Pt grew in a layer-by-layer manner at both 90K and 300K. This film aggregated into clusters when the sample was heated above 650K and the average size of these particles could be determined from the saturation coverage of CO and from the quantity of metal deposited, as measured using a film thickness monitor. All adsorption measurements reported in this paper were made on samples heated above 650K

Cold Spray Aluminum–Alumina Cermet Coatings: Effect of Alumina Content

Science.gov (United States)

Fernandez, Ruben; Jodoin, Bertrand

2018-04-01

Deposition behavior and deposition efficiency were investigated for several aluminum-alumina mixture compositions sprayed by cold spray. An increase in deposition efficiency was observed. Three theories postulated in the literature, explaining this increase in deposition efficiency, were investigated and assessed. Through finite element analysis, the interaction between a ceramic particle peening an impacting aluminum particle was found to be a possible mechanism to increase the deposition efficiency of the aluminum particle, but a probability analysis demonstrated that this peening event is too unlikely to contribute to the increment in deposition efficiency observed. The presence of asperities at the substrate and deposited layers was confirmed by a single-layer deposition efficiency measurement and proved to be a major mechanism in the increment of deposition efficiency of the studied mixtures. Finally, oxide removal produced by the impact of ceramic particles on substrate and deposited layers was evaluated as the complement of the other effects and found to also play a major role in increasing the deposition efficiency. It was found that the coatings retained approximately half of the feedstock powder alumina content. Hardness tests have shown a steady increase with the coating alumina content. Dry wear tests have revealed no improvement in wear resistance in samples with an alumina content lower than 22 wt.% compared to pure aluminum coatings. Adhesion strength showed a steady improvement with increasing alumina content in the feedstock powder from 18.5 MPa for pure aluminum coatings to values above 70 MPa for the ones sprayed with the highest feedstock powder alumina content.

Thin pentacene layer under pressure

International Nuclear Information System (INIS)

Srnanek, R.; Jakabovic, J.; Kovac, J.; Donoval, D.; Dobrocka, E.

2011-01-01

Organic semiconductors have got a lot of interest during the last years, due to their usability for organic thin film transistor. Pentacene, C 22 H 14 , is one of leading candidates for this purpose. While we obtain the published data about pressure-induced phase transition only on single crystal of pentacene we present pressure-induced phase transition in pentacene thin layers for the first time. Changes in the pentacene structure, caused by the pressure, were detected by micro-Raman spectroscopy. Applying the defined pressure to the pentacene layer it can be transformed from thin phase to bulk phase. Micro-Raman spectroscopy was found as useful method for detection of changes and phases identification in the pentacene layer induced by mechanical pressure. Such a pressure-induced transformation of pentacene thin layers was observed and identified for the first time. (authors)

Dimensional accuracy and surface property of titanium casting using gypsum-bonded alumina investment.

Science.gov (United States)

Yan, Min; Takahashi, Hidekazu; Nishimura, Fumio

2004-12-01

The aim of the present study was to evaluate the dimensional accuracy and surface property of titanium casting obtained using a gypsum-bonded alumina investment. The experimental gypsum-bonded alumina investment with 20 mass% gypsum content mixed with 2 mass% potassium sulfate was used for five cp titanium castings and three Cu-Zn alloy castings. The accuracy, surface roughness (Ra), and reaction layer thickness of these castings were investigated. The accuracy of the castings obtained from the experimental investment ranged from -0.04 to 0.23%, while surface roughness (Ra) ranged from 7.6 to 10.3microm. A reaction layer of about 150 microm thickness under the titanium casting surface was observed. These results suggested that the titanium casting obtained using the experimental investment was acceptable. Although the reaction layer was thin, surface roughness should be improved.

Spectroscopic ellipsometry analysis of a thin film composite membrane consisting of polysulfone on a porous α-alumina support.

Science.gov (United States)

Ogieglo, Wojciech; Wormeester, Herbert; Wessling, Matthias; Benes, Nieck E

2012-02-01

Exposure of a thin polymer film to a fluid can affect properties of the film such as the density and thickness. In particular in membrane technology, these changes can have important implications for membrane performance. Spectroscopic ellipsometry is a convenient technique for in situ studies of thin films, because of its noninvasive character and very high precision. The applicability of spectroscopic ellipsometry is usually limited to samples with well-defined interfacial regions, whereas in typical composite membranes, often substantial and irregular intrusion of the thin film into the pores of a support exists. In this work, we provide a detailed characterization of a polished porous alumina membrane support, using variable-angle spectroscopic ellipsometry in combination with atomic force microscopy and mercury porosimetry. Two Spectroscopic ellipsometry optical models are presented that can adequately describe the surface roughness of the support. These models consider the surface roughness as a distinct layer in which the porosity gradually increases toward the outer ambient interface. The first model considers the porosity profile to be linear; the second model assumes an exponential profile. It is shown that the models can be extended to account for a composite membrane geometry, by deposition of a thin polysulfone film onto the support. The developed method facilitates practicability for in situ spectroscopic ellipsometry studies of nonequilibrium systems, i.e., membranes under actual permeation conditions.

Preparation and characterization of 6-layered functionally graded nickel-alumina (Ni-Al2O3) composites

Science.gov (United States)

Latiff, M. I. A.; Nuruzzaman, D. M.; Basri, S.; Ismail, N. M.; Jamaludin, S. N. S.; Kamaruzaman, F. F.

2018-04-01

The present research study deals with the preparation of 6-layered functionally graded (FG) metal-ceramic composite materials through powder metallurgy technique. Using a cylindrical die-punch set made of steel, the nickel-alumina (Ni-Al2O3) graded composite structure was fabricated. The samples consist of four gradual inter layers of varied nickel composition (80wt.%, 60wt.%, 40wt.%, 20wt.%) sandwiched with pure Ni and Al2O3 powders at the ends (100wt.% and 0wt.% nickel) were fabricated under 30 ton compaction load using a hydraulic press. After that, two-step sintering was carried out at sintering temperature 1200ºC and soaking time 3 hours was maintained in a tube furnace. The properties of the prepared samples were characterized by radial shrinkage, optical microscopy and hardness testing. Results showed that larger shrinkage occurred within the ceramic phase which proves that more porosities were eliminated in the ceramic rich layers. From the microstructural analysis, it was observed that alumina particles are almost uniformly distributed in nickel matrix, so as nickel particles in the ceramic matrix of alumina-dominant layers. From interfacial analyses, it was observed that a smooth transition in microstructure from one layer to the next confirms a good interfacial solid state bonding between metal-ceramic constituents and good compaction process. On the other hand, microhardness test results suggest that there might be increasing percentage of porosities in the graded structure as the ceramic content rises.

Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

Directory of Open Access Journals (Sweden)

Peng Xia

2017-11-01

Full Text Available A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF state to low resistance (ON state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

Science.gov (United States)

Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

2017-11-01

A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

Low-temperature α-alumina thin film growth: ab initio studies of Al adatom surface migration

International Nuclear Information System (INIS)

Wallin, E; Helmersson, U; Muenger, E P; Chirita, V

2009-01-01

Investigations of activation energy barriers for Al surface hopping on α-Al 2 O 3 (0 0 0 1) surfaces have been carried out by means of first-principles density functional theory calculations and the nudged elastic band method. Results show that surface diffusion on the (most stable) Al-terminated surface is relatively fast with an energy barrier of 0.75 eV, whereas Al hopping on the O-terminated surface is slower, with barriers for jumps from the two metastable positions existing on this surface to the stable site of 0.31 and 0.99 eV. Based on this study and on the literature, the governing mechanisms during low-temperature α-alumina thin film growth are summarized and discussed. Our results support suggestions made in some previous experimental studies, pointing out that limited surface diffusivity is not the main obstacle for α-alumina growth at low-to-moderate temperatures, and that other effects should primarily be considered when designing novel processes for low-temperature α-alumina deposition.

Role of metal ion impurities in generation of oxygen gas within anodic alumina

Energy Technology Data Exchange (ETDEWEB)

Shimizu, K. [Keio Univ., Yokohama (Japan). Chemical Lab.; Habazaki, H. [Hokkaido Univ., Sapporo (Japan). Graduate School of Engineering; Skeldon, P.; Thompson, G.E.; Wood, G.C. [University of Manchester Inst. of Science and Technology (United Kingdom). Corrosion and Protection Centre

2002-07-01

The generation of oxygen gas within an amorphous anodic alumina film is reported. The film was formed by anodizing aluminum, which was first electropolished and then chemically polished in CrO{sub 3}-H{sub 3}PO{sub 4} solution, in sodium tungstate electrolyte. The procedure results in incorporation of mobile Cr{sup 3+} species, from the chemical polishing film, and mobile W{sup 6+} species, from the electrolyte, into the amorphous structure. The tungsten species are present in the outer 27% of the film thickness, while Cr{sup 6+} species occupy a thin layer within the tungsten-containing region. Above the Cr{sup 3+} containing layer, a band develops that contains oxygen bubbles of a few nanometres size. The oxygen is generated by oxidation of O{sup 2-} ions of the alumina. A mechanism of oxygen generation within the alumina is proposed based on the electronic band structure of the oxide, modified by the Cr{sup 3+} and W{sup 6+} species, and on the ionic transport processes during oxide growth. (author)

High temperature oxidation of thin FeCrAl strips

International Nuclear Information System (INIS)

Andrieu, E.; Germidis, A.; Molins, R.

1997-01-01

This study concerns the oxidation behaviour between 850 and 1100 C of FeCrAl thin strips. Oxidation kinetics have been continuously recorded on a thermobalance as well as discontinuously in an ''industrial'' furnace. Detailed observations of oxide layers have been performed in transmission electron microscopy on oxidized thin foil cross-sections. Oxide morphologies are correlated with kinetics: Slow kinetics and columnar α alumina grains above 950 C, fast kinetics and transition alumina platelets (γ-alumina) at 850 C and 900 C, followed by small α-alumina grains formation underneath. The weight gains in the industrial furnace displayed significant scatter and were generally greater than those measured in the thermobalance. The effect of extrinsic factors such as specimen size and shape, atmosphere, air flow conditions on the early formation of transition aluminas explains the observed differences. It appears then that in given cases parabolic constant identification from TGA recordings is difficult, or even impossible. This might contribute to explain the differences in the results presented in the literature. (orig.)

Adsorption Behavior of Vanadium in Presence of alumina with Emphasize on Triple Layer Model Simulation

International Nuclear Information System (INIS)

El-Sayed, A.A.

2006-01-01

Adsorption behavior of vanadium in alumina colloidal solution as simulation for soil-water and/or sediment - water system was investigated. factors affecting this behavior including Ph, humic acid and alumina concentrations were studied. Three stages of vanadium adsorption on alumina were approved due to Ph changes. The first is increasing adsorption with increasing Ph, in the range 1-3. the second is decreasing adsorption with increasing Ph in the range 6-10. the third is constant adsorption at 100% adsorption in Ph range 3-8 at 10 g/l concentration of alumina. However, at 0.2 g/l, the maximum adsorption of vanadium became less than 100%.The effect of humic acid on the adsorption behavior of vanadium (V) was studied and compared with that of vanadium (IV) . Adsorption behaviors were studied at concentration 4.1 E-4 M for vanadium at 0.1 M ionic strength. Triple layer model was used for simulation of vanadium adsorption behavior in presence of alumina under the same working conditions. the results showed good validation and verification to the data practically found. speciation of vanadium in both homogenous and heterogeneous systems was also studied theoretically so as to verify the most abundant elemental species and its impact on the environment

Electrochemically produced alumina as TL detector

International Nuclear Information System (INIS)

Osvay, M.

1996-01-01

The goal of this work was to compare the TL properties of various electrochemically produced alumina layers (E-AIO) in order to investigate the effect of the electrolyte and the Mg content on the alloys. It has been found that the TL sensitivity of oxidised layers is more influenced by the type of electrolyte, than by the composition of alloy. Hard oxide layer evolved in reduction electrolyte has rather different character compared to other alumina production investigated. The effect of reducing media seems to be very important during preparation of alumina layer. One of the advantages properties of E-AIO is, that it serve a promising method to increase the measuring range of TL method above 10 kGy as well. (author)

Frequency characterization of thin soft magnetic material layers used in spiral inductors

International Nuclear Information System (INIS)

Kriga, Adoum; Allassem, Désiré; Soultan, Malloum; Chatelon, Jean-Pierre; Siblini, Ali; Allard, Bruno; Rousseau, Jean Jacques

2012-01-01

The paper details the characterization of thin magnetic materials layers, particularly soft materials, with respect to their behaviour in frequency (from 10 MHz to 1 GHz). The proposed method is suitable for any soft but insulating magnetic material; Yttrium Iron Garnet (YIG) is used as an example. The principle is based on a comparison between simulations for different values of the permeability and measurement values versus frequency of planar inductor structures; an experimental validation is proposed as well. Thin magnetic material is first deposited on an alumina substrate using RF sputtering technique; a planar spiral winding of copper is then deposited on the magnetic material by the same technique. The effective permeability versus frequency is obtained by comparing two samples of spiral windings with and without magnetic material. Network analyser measurements on samples of various geometrical dimensions and of different thicknesses are necessary to determine the effective magnetic permeability; we have obtained a relative effective permeability of about 30 for seven turns spiral inductor of a 17 μm YIG film. - Highlights: ► A simple and original method is presented for the characterization of soft magnetic layer. ► This is a non-destructive method based on standard equipment. ► The principle is based on a comparison between simulations and measurement. ► An experimental validation is proposed as well.

Corrosion of pure magnesium under thin electrolyte layers

International Nuclear Information System (INIS)

Zhang Tao; Chen Chongmu; Shao Yawei; Meng Guozhe; Wang Fuhui; Li Xiaogang; Dong Chaofang

2008-01-01

The corrosion behavior of pure magnesium was investigated by means of cathodic polarization curve, electrochemical impedance spectroscopy (EIS) and electrochemical noise (EN) under aerated and deaerated thin electrolyte layers (TEL) with various thicknesses. Based on shot noise theory and stochastic theory, the EN results were quantitatively analyzed by using the Weibull and Gumbel distribution function, respectively. The results show that the cathodic process of pure magnesium under thin electrolyte layer was dominated by hydrogen reduction. With the decreasing of thin electrolyte layer thickness, cathodic process was retarded slightly while the anodic process was inhibited significantly, which indicated that both the cathodic and anodic process were inhibited in the presence of oxygen. The absence of oxygen decreased the corrosion resistance of pure magnesium in case of thin electrolyte layer. The corrosion was more localized under thin electrolyte layer than that in bulk solution. The results also demonstrate that there exist two kinds of effects for thin electrolyte layer on the corrosion behavior of pure magnesium: (1) the rate of pit initiation was evidently retarded compared to that in bulk solution; (2) the probability of pit growth oppositely increased. The corrosion model of pure magnesium under thin electrolyte layer was suggested in the paper

Nanocarbon-Coated Porous Anodic Alumina for Bionic Devices

Directory of Open Access Journals (Sweden)

Morteza Aramesh

2015-08-01

Full Text Available A highly-stable and biocompatible nanoporous electrode is demonstrated herein. The electrode is based on a porous anodic alumina which is conformally coated with an ultra-thin layer of diamond-like carbon. The nanocarbon coating plays an essential role for the chemical stability and biocompatibility of the electrodes; thus, the coated electrodes are ideally suited for biomedical applications. The corrosion resistance of the proposed electrodes was tested under extreme chemical conditions, such as in boiling acidic/alkali environments. The nanostructured morphology and the surface chemistry of the electrodes were maintained after wet/dry chemical corrosion tests. The non-cytotoxicity of the electrodes was tested by standard toxicity tests using mouse fibroblasts and cortical neurons. Furthermore, the cell–electrode interaction of cortical neurons with nanocarbon coated nanoporous anodic alumina was studied in vitro. Cortical neurons were found to attach and spread to the nanocarbon coated electrodes without using additional biomolecules, whilst no cell attachment was observed on the surface of the bare anodic alumina. Neurite growth appeared to be sensitive to nanotopographical features of the electrodes. The proposed electrodes show a great promise for practical applications such as retinal prostheses and bionic implants in general.

Preparation, characterization and microstructural optimization of a thin {gamma}-alumina membrane on a porous stainless steel substrate

Energy Technology Data Exchange (ETDEWEB)

Abedini, Sanam [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Hafez Street, Tehran (Iran, Islamic Republic of); Parvin, Nader, E-mail: naderparvin@yahoo.com [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Hafez Street, Tehran (Iran, Islamic Republic of); Ashtari, Parviz [Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of)

2012-01-30

Highlights: Black-Right-Pointing-Pointer A mesoporous {gamma}-Al{sub 2}O{sub 3} membrane was synthesized on conventional {alpha}-Al{sub 2}O{sub 3} substrates. Black-Right-Pointing-Pointer {gamma}-Al{sub 2}O{sub 3} membrane was potential for CO{sub 2} separation at high pressure test conditions. Black-Right-Pointing-Pointer Thus, it was required to provide the membrane layer with more strength. Black-Right-Pointing-Pointer {alpha}-Alumina substrate was substituted with porous stainless steel. Black-Right-Pointing-Pointer A stainless steel supported {alpha}-Al{sub 2}O{sub 3} membrane with better properties was synthesized. - Abstract: In this work, a supported mesoporous (MEP) {gamma}-Al{sub 2}O{sub 3} membrane was synthesized on conventional {alpha}-Al{sub 2}O{sub 3} substrates by sol-gel dip coating process. In the following, the preparation of a novel metallic-ceramic composite membrane was studied, which incorporated desirable properties of both ceramic membrane and porous metallic substrate. For this purpose, mesoporous alumina membrane layer was developed on a porous 316L stainless steel substrate. The substrate was prepared by loose powder sintering and modified by soaking-rolling and fast drying method. The prepared membranes were characterized using scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), X-ray diffractometer (XRD) and N{sub 2}-adsorption/desorption measurements (BET analyses). The results revealed that a defect-free {gamma}-alumina membrane with 2.1 nm average pore size can be produced. Permeation tests with N{sub 2} gas revealed that the stainless steel substrate had 40 times more permeability than conventionally used alumina support. Additionally, single gas permeation of {gamma}-alumina membrane for CO{sub 2} and N{sub 2} was compared. It was observed that CO{sub 2} could be separated from N{sub 2} by the MEP {gamma}-Al{sub 2}O{sub 3} membrane in high pressure permeation condition, where stainless steel

Surface-enhanced Raman scattering of self-assembled thiol monolayers and supported lipid membranes on thin anodic porous alumina

Directory of Open Access Journals (Sweden)

Marco Salerno

2017-01-01

Full Text Available Thin anodic porous alumina (tAPA was fabricated from a 500 nm thick aluminum (Al layer coated on silicon wafers, through single-step anodization performed in a Teflon electrochemical cell in 0.4 M aqueous phosphoric acid at 110 V. Post-fabrication etching in the same acid allowed obtaining tAPA surfaces with ≈160 nm pore diameter and ≈80 nm corresponding wall thickness to be prepared. The tAPA surfaces were made SERS-active by coating with a thin (≈25 nm gold (Au layer. The as obtained tAPA–Au substrates were incubated first with different thiols, namely mercaptobenzoic acid (MbA and aminothiol (AT, and then with phospholipid vesicles of different composition to form a supported lipid bilayer (SLB. At each step, the SERS substrate functionality was assessed, demonstrating acceptable enhancement (≥100×. The chemisorption of thiols during the first step and the formation of SLB from the vesicles during the second step, were independently monitored by using a quartz crystal microbalance with dissipation monitoring (QCM-D technique. The SLB membranes represent a simplified model system of the living cells membranes, which makes the successful observation of SERS on these films promising in view of the use of tAPA–Au substrates as a platform for the development of surface-enhanced Raman spectroscopy (SERS biosensors on living cells. In the future, these tAPA–Au-SLB substrates will be investigated also for drug delivery of bioactive agents from the APA pores.

Investigating the property profile of polyamide-alumina nanocomposite materials

International Nuclear Information System (INIS)

Sarwar, Muhammad Ilyas; Zulfiqar, Sonia; Ahmad, Zahoor

2009-01-01

Transparent sol-gel-derived nanocomposites were prepared by incorporating an alumina network into a polyamide matrix. Different amounts of aluminum butoxide were hydrolyzed and condensed to produce the alumina network. Thin composite films were characterized in terms of their optical, morphological, mechanical and thermomechanical properties. Tensile modulus, stress at both yield and break points, improved for alumina loadings of 5-10 wt.%. The glass transition temperature increased to 140 o C for nanocomposites containing 15 wt.% alumina. Scanning electron microscopy investigations indicated a uniform distribution of alumina in the polyamide matrix.

Preparation and characterization of metallic supported thin Pd-Ag membranes for hydrogen separation

OpenAIRE

Fernandez, Ekain; Medrano, Jose Antonio; Melendez, Jon; Parco, Maria; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.

2015-01-01

This paper reports the preparation and characterization of thin-film (4-5 µm thick) Pd-Ag metallic supported membranes for high temperature applications. Various thin film membranes have been prepared by depositing a ceramic interdiffusion barrier layer prior to the simultaneous Pd-Ag electroless plating deposition. Two deposition techniques for ceramic layers (made of zirconia and alumina) have been evaluated: atmospheric plasma spraying and dip coating of a powder suspension. Initially, the...

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Delamination of Compressed Thin Layers at Corners

DEFF Research Database (Denmark)

Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

2008-01-01

An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat s...... layers, Fracture mechanics, Crack closure, Steady state crack propagation.......An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...... results for the fracture mechanical properties have been obtained, and these are applied in a study of the effect of contacting crack faces. Special attention has been given to analyse conditions under which steady state propagation of buckling driven delamination takes place. Keywords: Delamination, Thin...

Linear Coefficient of Thermal Expansion of Porous Anodic Alumina Thin Films from Atomic Force Microscopy

OpenAIRE

Zhang, Richard X; Fisher, Timothy; Raman, Arvind; Sands, Timothy D

2009-01-01

In this article, a precise and convenient technique based on the atomic force microscope (AFM) is developed to measure the linear coefficient of thermal expansion of a porous anodic alumina thin film. A stage was used to heat the sample from room temperature up to 450 K. Thermal effects on AFM probes and different operation modes at elevated temperatures were also studied, and a silicon AFM probe in the tapping mode was chosen for the subsequent measurements due to its temperature insensitivi...

FDTD simulations and analysis of thin sample dielectric properties measurements using coaxial probes

Energy Technology Data Exchange (ETDEWEB)

Bringhurst, S.; Iskander, M.F.; White, M.J. [Univ. of Utah, Salt Lake City, UT (United States). Electrical Engineering Dept.

1996-12-31

A metallized ceramic probe has been designed for high temperature broadband dielectric properties measurements. The probe was fabricated out of an alumina tube and rod as the outer and inner conductors respectively. The alumina was metallized with a 3 mil layer of moly-manganese and then covered with a 0.5 mil protective layer of nickel plating. The probe has been used to make complex dielectric properties measurements over the complete frequency band from 500 MHz to 3 GHz, and for temperatures as high as 1,000 C. A 3D Finite-Difference Time-Domain (FDTD) code was used to help investigate the feasibility of this probe to measure the complex permittivity of thin samples. It is shown that by backing the material under test with a standard material of known dielectric constant, the complex permittivity of thin samples can be measured accurately using the developed FDTD algorithm. This FDTD procedure for making thin sample dielectric properties measurements will be described.

Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers; Filmes finos de carbono depositados por meio da tecnica de magnetron sputtering usando cobalto, cobre e niquel como buffer-layers

Energy Technology Data Exchange (ETDEWEB)

Costa e Silva, Danilo Lopes

2015-11-01

In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

Layer-by-layer assembly of thin film oxygen barrier

International Nuclear Information System (INIS)

Jang, Woo-Sik; Rawson, Ian; Grunlan, Jaime C.

2008-01-01

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation ( 2 /day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Direct Visualization of the Hydration Layer on Alumina Nanoparticles with the Fluid Cell STEM in situ.

Science.gov (United States)

Firlar, Emre; Çınar, Simge; Kashyap, Sanjay; Akinc, Mufit; Prozorov, Tanya

2015-05-21

Rheological behavior of aqueous suspensions containing nanometer-sized powders is of relevance to many branches of industry. Unusually high viscosities observed for suspensions of nanoparticles compared to those of micron size powders cannot be explained by current viscosity models. Formation of so-called hydration layer on alumina nanoparticles in water was hypothesized, but never observed experimentally. We report here on the direct visualization of aqueous suspensions of alumina with the fluid cell in situ. We observe the hydration layer formed over the particle aggregates and show that such hydrated aggregates constitute new particle assemblies and affect the flow behavior of the suspensions. We discuss how these hydrated nanoclusters alter the effective solid content and the viscosity of nanostructured suspensions. Our findings elucidate the source of high viscosity observed for nanoparticle suspensions and are of direct relevance to many industrial sectors including materials, food, cosmetics, pharmaceutical among others employing colloidal slurries with nanometer-scale particles.

Thin layer activation

International Nuclear Information System (INIS)

Schweickert, H.; Fehsenfeld, P.

1995-01-01

The reliability of industrial equip ment is substantially influenced by wear and corrosion; monitoring can prevent accidents and avoid down-time. One powerful tool is thin layer activation analysis (TLA) using accelerator systems. The information is used to improve mechanical design and material usage; the technology is used by many large companies, particularly in the automotive industry, e.g. Daimler Benz. A critical area of a machine component receives a thin layer of radioactivity by irradiation with charged particles from an accelerator - usually a cyclotron. The radioactivity can be made homogeneous by suitable selection of particle, beam energy and angle of incidence. Layer thickness can be varied from 20 microns to around 1 mm with different depth distributions; the position and size of the wear zone can be set to within 0.1 mm. The machine is then reassembled and operated so that wear can be measured. An example is a combustion engine comprising piston ring, cylinder wall, cooling water jacket and housing wall, where wear measurements on the cylinder wall are required in a critical zone around the dead-point of the piston ring. Proton beam bombardment creates a radioactive layer whose thickness is known accurately, and characteristic gamma radiation from this radioactive zone penetrates through the engine and is detected externally. Measurements can be made either of the activity removed from the surface, or of the (reduced) residual activity; wear measurement of the order of 10 -9 metres is possible

Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient

International Nuclear Information System (INIS)

Schneider, J.M.; Anders, A.; Hjoervarsson, B.; Petrov, I.; Macak, K.; Helmersson, U.; Sundgren, J.

1999-01-01

We describe the hydrogen uptake during the synthesis of alumina films from H 2 O present in the high vacuum gas background. The hydrogen concentration in the films was determined by the 1 H( 15 N,αγ) 12 C nuclear resonance reaction. Furthermore, we show the presence of hydrogen ions in the plasma stream by time-of-flight mass spectrometry. The hydrogen content increased in both the film and the plasma stream, as the oxygen partial pressure was increased. On the basis of these measurements and thermodynamic considerations, we suggest that an aluminum oxide hydroxide compound is formed, both on the cathode surface as well as in the film. The large scatter in the data reported in the literature for refractive index and chemical stability of alumina thin films can be explained on the basis of the suggested aluminum oxide hydroxide formation. copyright 1999 American Institute of Physics

Fabrication of asymmetric alumina membranes

International Nuclear Information System (INIS)

Firouzghalb, H.; Falamaki, C.

2010-01-01

The effect of SrO addition on the thermal stabilization of transition aluminas with the aim of producing membrane layers (supported and unsupported) has been investigated. Al 2 O 3 -x wt.% SrO composite powders (x = 1, 3, 5, 8) were synthesized by co-precipitation of the hydroxides from solutions of AlCl 3 and Sr(NO 3 ) 2 salts using NH 4 OH as a precipitating agent. Optimum SrO dopant concentration regarding the transition aluminas stabilization effect was determined to be 5 wt.% based on XRD analysis. STA analysis showed a 30 deg. C shift versus higher temperatures in the transformation of final transitional alumina (θ-Al 2 O 3 ) to stable alpha phase due to addition of 5 wt.% SrO. The mechanism of transition aluminas thermal stabilization as a result of SrO addition is thoroughly discussed. Unsupported alumina membranes were prepared by drying boehmite sols at 600, 800, 1000 and 1100 deg. C. The effect of calcination temperature on surface area, pore size distribution of unsupported membranes containing 5 wt.% SrO has been investigated. The microstructure of unsupported and supported membranes revealed quite different. Smaller grains in the supported layers were attributed to the interaction between support and membrane.

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

Lithium battery electrodes with ultra-thin alumina coatings

Science.gov (United States)

Se-Hee, Lee; George, Steven M.; Cavanagh, Andrew S.; Yoon Seok, Jung; Dillon, Anne C.

2015-11-24

Electrodes for lithium batteries are coated via an atomic layer deposition process. The coatings can be applied to the assembled electrodes, or in some cases to particles of electrode material prior to assembling the particles into an electrode. The coatings can be as thin as 2 .ANG.ngstroms thick. The coating provides for a stable electrode. Batteries containing the electrodes tend to exhibit high cycling capacities.

Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

International Nuclear Information System (INIS)

Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

2008-01-01

[ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

Antibacterial activity of zinc oxide-coated nanoporous alumina

Energy Technology Data Exchange (ETDEWEB)

Skoog, S.A. [Joint Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Box 7115, Raleigh, NC 27695-7115 (United States); Bayati, M.R. [Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907 (United States); Petrochenko, P.E. [Joint Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Box 7115, Raleigh, NC 27695-7115 (United States); Division of Biology, Office of Science and Engineering Laboratories, Center for Devices and Radiological Health, U.S. Food and Drug Administration, Silver Spring, MD 20993 (United States); Stafslien, S.; Daniels, J.; Cilz, N. [Center for Nanoscale Science and Engineering, North Dakota State University, 1805 Research Park Drive, Fargo, ND 58102 (United States); Comstock, D.J.; Elam, J.W. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Narayan, R.J., E-mail: roger_narayan@msn.com [Joint Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Box 7115, Raleigh, NC 27695-7115 (United States); Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695-7907 (United States)

2012-07-25

Highlights: Black-Right-Pointing-Pointer Atomic layer deposition was used to deposit ZnO on nanoporous alumina membranes. Black-Right-Pointing-Pointer Scanning electron microscopy showed continuous coatings of zinc oxide nanocrystals. Black-Right-Pointing-Pointer Activity against B. subtilis, E. coli, S. aureus, and S. epidermidis was shown. - Abstract: Nanoporous alumina membranes, also known as anodized aluminum oxide membranes, are being investigated for use in treatment of burn injuries and other skin wounds. In this study, atomic layer deposition was used for coating the surfaces of nanoporous alumina membranes with zinc oxide. Agar diffusion assays were used to show activity of zinc oxide-coated nanoporous alumina membranes against several bacteria found on the skin surface, including Bacillus subtilis, Escherichia coli, Staphylococcus aureus, and Staphylococcus epidermidis. On the other hand, zinc oxide-coated nanoporous alumina membranes did not show activity against Pseudomonas aeruginosa, Enterococcus faecalis, and Candida albicans. These results suggest that zinc oxide-coated nanoporous alumina membranes have activity against some Gram-positive and Gram-negative bacteria that are associated with skin colonization and skin infection.

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Directory of Open Access Journals (Sweden)

Hui-Ying Li

2015-02-01

Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

Characterization of the porous anodic alumina nanostructures with a metal interlayer on Si substrates

Energy Technology Data Exchange (ETDEWEB)

Fang, Chia-Hui; Chen, Hung-Ing; Hsiao, Jui-Ju; Wang, Jen-Cheng; Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw

2014-04-15

Porous anodic alumina (PAA) films produced by the anodization technique have made possible the mass production of porous nano-scale structures where the pore height and diameter are controllable. A metal interlayer is observed to have a significant influence on the characteristics of these PAA nanostructures. In this study, we investigate in-depth the effect of the current density on the properties of porous anodic alumina nanostructures with a metal interlayer. A thin film layer of tungsten (W) and titanium (Ti) was sandwiched between a porous anodic alumina film and a silicon (Si) substrate to form PAA/W/Si and PAA/Ti/Si structures. The material and optical characteristics of the porous anodic alumina nanostructures, with and without a metal interlayer, on silicon substrates were studied using the scanning electron microscopy, X-ray diffraction (XRD), and temperature-dependent photoluminescence (PL) measurements. The current densities of the porous anodic alumina nanostructures with the metal interlayer are higher than for the PAA/Si, resulting in an increase of the growth rate of the oxide layer. It can be observed from the X-ray diffraction curves that there is more aluminum oxide inside the structure with the metal interlayer. Furthermore, it has been found that there is a reduction in the photoluminescence intensity of the oxygen vacancy with only one electron due to the formation of oxygen vacancies inside the aluminum oxide during the re-crystallization process. This leads to competition between the two kinds of different oxygen-deficient defect centers (F+ and F centers) in the carrier recombination mechanism from the PL spectra of the porous anodic alumina nanostructures, with and without a metal interlayer, on silicon substrates. -- Highlights: • Study of porous anodic alumina (PAA) films with metal interlayers on silicon. • The highly ordered PAA film with a fairly regular nano-porous structure. • The luminescence properties of PAA films were

Influence of titanium and vanadium on the hydrogen transport through amorphous alumina films

Energy Technology Data Exchange (ETDEWEB)

Palsson, G.K. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Wang, Y.T. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Azofeifa, D. [Centro de Investigacion en Ciencia e Ingenieria de Materiales and Escuela de Fisica, Universidad de Costa Rica, San Jose (Costa Rica); Raanaei, H. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Department of Physics, Persian Gulf University, Bushehr 75168 (Iran, Islamic Republic of); Sahlberg, M. [Department of Materials Chemistry, Uppsala University, Box 538, S-751 21 Uppsala (Sweden); Hjoervarsson, B. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden)

2010-04-02

The influence of titanium and vanadium on the hydrogen transport rate through thin amorphous alumina films is addressed. Only small changes in the transport rate are observed when the Al{sub 2}O{sub 3} are covered with titanium or vanadium. This is in stark contrast to results with a Pd overlayer, which enhances the transport by an order of magnitude. Similarly, when titanium is embedded into the alumina the transport rate is faster than for the covered case but still slower than the undoped reference. Embedding vanadium in the alumina does not yield an increase in uptake rate compared to the vanadium covered oxide layers. These results add to the understanding of the hydrogen uptake of oxidized metals, especially the alanates, where the addition of titanium has been found to significantly enhance the rate of hydrogen uptake. The current findings eliminate two possible routes for the catalysis of alanates by Ti, namely dissociation and effective diffusion short-cuts formed by Ti. Finally, no photocatalytic enhancement was noticed on the titanium covered samples.

Structural analysis of anodic porous alumina used for resistive random access memory

International Nuclear Information System (INIS)

Lee, Jeungwoo; Nigo, Seisuke; Kato, Seiichi; Kitazawa, Hideaki; Kido, Giyuu; Nakano, Yoshihiro

2010-01-01

Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

Science.gov (United States)

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres

Science.gov (United States)

Cadden, Charles H.; Yang, Nancy Yuan Chi; Hosking, Floyd M.

2001-01-01

The present invention relates to a method for preparing the surface of a high purity alumina ceramic or sapphire specimen that enables direct brazing in a hydrogen atmosphere using an active braze alloy. The present invention also relates to a method for directly brazing a high purity alumina ceramic or sapphire specimen to a ceramic or metal member using this method of surface preparation, and to articles produced by this brazing method. The presence of silicon, in the form of a SiO.sub.2 -containing surface layer, can more than double the tensile bond strength in alumina ceramic joints brazed in a hydrogen atmosphere using an active Au-16Ni-0.75 Mo-1.75V filler metal. A thin silicon coating applied by PVD processing can, after air firing, produce a semi-continuous coverage of the alumina surface with a SiO.sub.2 film. Room temperature tensile strength was found to be proportional to the fraction of air fired surface covered by silicon-containing films. Similarly, the ratio of substrate fracture versus interface separation was also related to the amount of surface silicon present prior to brazing. This process can replace the need to perform a "moly-manganese" metallization step.

Surface modification of nanoporous alumina layers by deposition of Ag nanoparticles. Effect of alumina pore diameter on the morphology of silver deposit and its influence on SERS activity

Science.gov (United States)

Pisarek, Marcin; Nowakowski, Robert; Kudelski, Andrzej; Holdynski, Marcin; Roguska, Agata; Janik-Czachor, Maria; Kurowska-Tabor, Elżbieta; Sulka, Grzegorz D.

2015-12-01

Self-organized Al2O3 nanoporous/nanotubular (Al2O3-NP) oxide layers decorated with silver nanoparticles (Ag-NPs) exhibiting specific properties may serve as attractive SERS substrates for investigating the interactions between an adsorbate and adsorbent, or as stable platforms for detecting various organic compounds. This article presents the influence of the size of the alumina nanopores with a deposit of silver nanoparticles obtained by the magnetron sputtering technique on the morphology of silver film. Moreover, the effect of pore diameter on the intensity of SERS spectra in Ag-NPs/Al2O3-NP/Al composites has also been estimated. For such investigations we used pyridine as a probe molecule, since it has a large cross-section for Raman scattering. To characterize the morphology of the composite oxide layer Ag-NPs/Al2O3-NP/Al, before and after deposition of Ag-NPs by PVD methods (Physical Vapor Deposition), we used scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface analytical technique of surface-enhanced Raman spectroscopy (SERS) was used to investigate the surface activity of the composite. The results obtained show that, for a carefully controlled amount of Ag (0.020 mg/cm2 - deposited on the top of alumina nanopores whose average size varies from ∼86 nm up to ∼320 nm) in the composites investigated, pore size significantly affects SERS enhancement. We obtained distinctly higher intensities of SERS spectra for substrates with an Ag-NPs deposit having a larger diameter of the alumina nanopores. AFM results suggest that both the lateral and perpendicular distribution of Ag-NPs within and on the top of the largest pores is responsible for the highest SERS activity of the resulting Ag-NPs/Al2O3-NP/Al composite layer, since it produces a variety of cavities and slits which function as resonators for the adsorbed molecules. The Ag-NPs/MeOx-NP/Me composite layers obtained ensure a good reproducibility of the SERS measurements.

MultiLayer solid electrolyte for lithium thin film batteries

Science.gov (United States)

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Enhanced Absorption in Organic Thin-Films from Imprinted Concave Nanostructures

Directory of Open Access Journals (Sweden)

Arkadiusz Jarosław GOSZCZAK

2017-02-01

Full Text Available In this work, a rapid, replicable method for imprinting concave nanostructures to be used as functional light-trapping nanostructures in organic thin-films is presented. Porous anodic alumina templates were fabricated both by anodization of thick Al foils and by anodization of submicrometer thin Al films evaporated via e-beam evaporation on Si substrates. The template formation leads to natural patterning of the underlying Al layers that are used as rigid masters for stamp fabrication, after selective etching of the porous anodic alumina. PDMS stamps were made after replicating the Al concave patterns and used for imprinting of spin coated photoresist on glass substrates. We have investigated semi-periodic and aperiodic imprinted large concave patterns fabricated from rigid masters after anodization of Al in H3PO4. We show that metal covered imprinted concaves show enhancement in absorption that is attributed to field enhancement and diffuse scattering, leading to efficient light trapping for a selected active layer material (P3HT:PCBM.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14188

Copper diffusion in TaN-based thin layers

Energy Technology Data Exchange (ETDEWEB)

Nazon, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fraisse, B. [Laboratoire Structure, Proprietes et Modelisation des Solides (UMR 8580), Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Sarradin, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fries, S.G. [SGF Scientific Consultancy, Arndt str.9, D-52064 Aachen (Germany); Tedenac, J.C. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Frety, N. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

2008-07-15

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.

Surface area, crystal morphology and characterization of transition alumina powders from a new gibbsite precursor

Directory of Open Access Journals (Sweden)

Antonio Carlos Vieira Coelho

2007-06-01

Full Text Available A new procedure was used to prepare a microcrystalline powder constituted by thin euhedral hexagonal gibbsite plates, 0.2 to 0.6 µm in diameter and 32 nm thick. The powder, fired between 200 and 1000 °C, produced chi and kappa transition aluminas. Alpha-alumina is formed from 1000 °C and recrystallized up to 1500 °C. At 1000 °C, kappa- and alpha-alumina coexisted, but kappa-alumina could only be characterized by SAED. The details of the internal organization of the transition alumina pseudomorphs were clearly observable in TEM due to the great thinness of the I-gibbsite plates. The specific surface area varied from pristine I-gibbsite (24.9 m².g-1 to chi- and kappa transition aluminas (25.4 m².g-1 at 1000 °C to alpha-alumina (4.0 m².g-1 at 1500 °C. The maximum value of specific surface area is 347 m².g-1 in chi-alumina powder at 300 °C, a difference from Bayer gibbsite, in which the chi-alumina highest surface area is 370 m².g-1 at 400 °C.

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

2011-01-01

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

A simple technique for direct growth of Au into a nanoporous alumina layer on conductive glass as a reusable SERS substrate

Energy Technology Data Exchange (ETDEWEB)

Yu, Jiajie [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China); Shen, Muzhong [School of Engineering, AnHui Agricultural University, Hefei 230036 (China); Liu, Siyu; Li, Feng [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China); Sun, Dongping, E-mail: sundpe301@163.com [School of Engineering, AnHui Agricultural University, Hefei 230036 (China); Wang, Tianhe, E-mail: thwang56@126.com [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China)

2017-06-01

Graphical abstract: A simple technique for direct growth of gold nanoparticles (GNPs) into a nanostructured porous alumina layer on conductive glass slide (PAOCG). Gold was uniformly distributed in porous alumina layer. Au/PAOCG can serve as a portable, durable and reusable SERS substrate. - Highlights: • A simple method of producing nanoporous alumina layer on conductive glasses. • A facile technique for direct growth of gold nanoparticles (GNPs) into PAOCG. • It presents a general protocol for preparation of (MNPs) on conductive glasses. • Au/PAOCG exhibits high SERS sensitivity and excellent reusability. - Abstract: In this paper, we describe a simple technique for direct growth of gold nanoparticles (GNPs) into a nanostructured porous alumina layer on conductive glass slide (PAOCG). PAOCG was attached firmly with a small piece of steel and was then immersed in a HAuCl{sub 4} solution. Electro-induced electrons from steel were employed to reduce AuCl{sub 4}{sup −} on PAOCG. The galvanic replacement reaction (GRR) was adopted as the fundamental mechanism for reducing metal precursors. This mechanism was further studied by open circuit potential-time (OCP-t) experiment and the result demonstrated that steel induced the continuous proceeding of this reaction. This strategy presents a simple and general protocol for preparation of metal nanoparticles (MNPs) on conductive glass substrates. The SERS properties of Au/PAOCG were investigated using aqueous crystal violet (CV) and 4-mercaptopyridine (4-Mpy) as probe molecules. Au/PAOCG allowed as low as 10{sup −9} M CV and 10{sup −8} M 4-Mpy to be detected. The reusability of this substrate was achieved by measuring the SERS spectrum of the probe molecules followed with a 400 °C heat treatment for 10 min to remove the residuals. This substrate could be reused for at least ten cycles without any significantly reduced SERS performance. Therefore, this surface can serve as a portable, durable and reusable SERS

Methods for producing thin film charge selective transport layers

Science.gov (United States)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

2018-01-02

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Protein adsorption on low temperature alpha alumina films for surgical instruments

Energy Technology Data Exchange (ETDEWEB)

Cloud, A.N., E-mail: acloud@uark.ed [University of Arkansas, Fayetteville, AR 72701 (United States); Kumar, S. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, Adelaide, SA 5095 (Australia); Kavdia, M.; Abu-Safe, H.H.; Gordon, M.H. [University of Arkansas, Fayetteville, AR 72701 (United States)

2009-08-31

Bulk alumina has been shown to exhibit reduced protein adsorption, a property that can be exploited for developing alumina-coated surgical instruments and devices. Alpha alumina thin films were deposited on surgical stainless steel substrates to investigate the adsorption of a model protein (BSA, bovine serum albumin). The films were deposited at 480 {sup o}C by AC inverted cylindrical magnetron sputtering. Films were obtained at 6 kW and 50% oxygen partial pressure by volume. The presence of alpha-phase alumina has been shown by transmission electron microscopy. Results indicate that there was a 50% reduction in protein adsorption for samples with the alumina coating compared to those with no coating.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

Science.gov (United States)

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

2015-01-15

In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

Conformal atomic layer deposition of alumina on millimeter tall, vertically-aligned carbon nanotube arrays.

Science.gov (United States)

Stano, Kelly L; Carroll, Murphy; Padbury, Richard; McCord, Marian; Jur, Jesse S; Bradford, Philip D

2014-11-12

Atomic layer deposition (ALD) can be used to coat high aspect ratio and high surface area substrates with conformal and precisely controlled thin films. Vertically aligned arrays of multiwalled carbon nanotubes (MWCNTs) with lengths up to 1.5 mm were conformally coated with alumina from base to tip. The nucleation and growth behaviors of Al2O3 ALD precursors on the MWCNTs were studied as a function of CNT surface chemistry. CNT surfaces were modified through a series of post-treatments including pyrolytic carbon deposition, high temperature thermal annealing, and oxygen plasma functionalization. Conformal coatings were achieved where post-treatments resulted in increased defect density as well as the extent of functionalization, as characterized by X-ray photoelectron spectroscopy and Raman spectroscopy. Using thermogravimetric analysis, it was determined that MWCNTs treated with pyrolytic carbon and plasma functionalization prior to ALD coating were more stable to thermal oxidation than pristine ALD coated samples. Functionalized and ALD coated arrays had a compressive modulus more than two times higher than a pristine array coated for the same number of cycles. Cross-sectional energy dispersive X-ray spectroscopy confirmed that Al2O3 could be uniformly deposited through the entire thickness of the vertically aligned MWCNT array by manipulating sample orientation and mounting techniques. Following the ALD coating, the MWCNT arrays demonstrated hydrophilic wetting behavior and also exhibited foam-like recovery following compressive strain.

Delamination of Compressed Thin Layers at Corners

DEFF Research Database (Denmark)

Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

2008-01-01

An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...

Modelling of fast jet formation under explosion collision of two-layer alumina/copper tubes

Directory of Open Access Journals (Sweden)

I Balagansky

2017-09-01

Full Text Available Under explosion collapse of two-layer tubes with an outer layer of high-modulus ceramics and an inner layer of copper, formation of a fast and dense copper jet is plausible. We have performed a numerical simulation of the explosion collapse of a two-layer alumina/copper tube using ANSYS AUTODYN software. The simulation was performed in a 2D-axis symmetry posting on an Eulerian mesh of 3900x1200 cells. The simulation results indicate two separate stages of the tube collapse process: the nonstationary and the stationary stage. At the initial stage, a non-stationary fragmented jet is moving with the velocity of leading elements up to 30 km/s. The collapse velocity of the tube to the symmetry axis is about 2 km/s, and the pressure in the contact zone exceeds 700 GPa. During the stationary stage, a dense jet is forming with the velocity of 20 km/s. Temperature of the dense jet is about 2000 K, jet failure occurs when the value of effective plastic deformation reaches 30.

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

International Nuclear Information System (INIS)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

2015-01-01

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

Energy Technology Data Exchange (ETDEWEB)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

2015-01-14

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

International Nuclear Information System (INIS)

Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

2005-01-01

Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

The effect of an atomically deposited layer of alumina on NiO in P-type dye-sensitized solar cells.

Science.gov (United States)

Natu, Gayatri; Huang, Zhongjie; Ji, Zhiqiang; Wu, Yiying

2012-01-10

We present a systematic investigation of the fundamental effects of an atomically deposited alumina (AlO(x)H(y)) onto the NiO films in p-type dye-sensitized solar cells (p-DSCs). With P1 as the sensitizing dye and 0.1 M I(2) and 1.0 M LiI in 3-methoxypropionitrile as the electrolyte, one atomic layer deposition (ALD) cycle of alumina was used to achieve a 74% increase in the overall conversion efficiency of a NiO-based DSC. The open circuit voltage of the cells increased from 0.11 to 0.15 V, and the short circuit current density increased from 0.83 to 0.95 mA/cm(2). Adsorption isotherm studies were performed to show that the amount of dye adsorbed on the NiO-alumina film is slightly lower than the amount adsorbed on the nontreated NiO film. The increased J(sc) was therefore assigned to the increased efficiency of carrier collection at the semiconductor-FTO interface. Our study of the photocurrent onset potentials of NiO and NiO-alumina films with the chopped light measurement technique showed no definitive difference in the onset potential values. However, the DSCs based on NiO-alumina showed a higher recombination resistance value from the electrochemical impedance studies and a higher diode ideality factor from the V(oc) versus ln(light intensity) plots as compared to the DSCs based on untreated NiO. It has thus been established that the increase in V(oc) upon alumina treatment arises due to a higher resistance for electron-hole recombination across NiO surface locally.

Optical performance of hybrid porous silicon-porous alumina multilayers

Science.gov (United States)

Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

2018-05-01

In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

Enhancing the platinum atomic layer deposition infiltration depth inside anodic alumina nanoporous membrane

Energy Technology Data Exchange (ETDEWEB)

Vaish, Amit, E-mail: anv@udel.edu; Krueger, Susan; Dimitriou, Michael; Majkrzak, Charles [National Institute of Standards and Technology (NIST) Center for Neutron Research, Gaithersburg, MD 20899-8313 (United States); Vanderah, David J. [Institute for Bioscience and Biotechnology Research, NIST, Rockville, Maryland 20850 (United States); Chen, Lei, E-mail: lei.chen@nist.gov [NIST Center for Nanoscale Science and Technology, Gaithersburg, Maryland 20899-8313 (United States); Gawrisch, Klaus [Laboratory of Membrane Biochemistry and Biophysics, National Institute on Alcohol Abuse and Alcoholism, National Institutes of Health, Bethesda, Maryland 20892 (United States)

2015-01-15

Nanoporous platinum membranes can be straightforwardly fabricated by forming a Pt coating inside the nanopores of anodic alumina membranes (AAO) using atomic layer deposition (ALD). However, the high-aspect-ratio of AAO makes Pt ALD very challenging. By tuning the process deposition temperature and precursor exposure time, enhanced infiltration depth along with conformal coating was achieved for Pt ALD inside the AAO templates. Cross-sectional scanning electron microscopy/energy dispersive x-ray spectroscopy and small angle neutron scattering were employed to analyze the Pt coverage and thickness inside the AAO nanopores. Additionally, one application of platinum-coated membrane was demonstrated by creating a high-density protein-functionalized interface.

Effects of Processing Temperatures of Nickel Plating on Capacitance Density of Alumina Film Capacitor.

Science.gov (United States)

Jeong, Myung-Sun; Ju, Byeong-Kwon; Lee, Jeon-Kook

2015-06-01

We observed the effects of nickel plating temperatures for controlling the surface morphologies of the deposited nickel layers on the alumina nano-pores. The alumina nano-channels were filled with nickel at various processing temperatures of 60-90 degrees C. The electrical properties of the alumina film capacitors were changed with processing temperatures. The electroless nickel plating (ENP) at 60 degrees C improved the nickel penetration into the alumina nano-channels due to the reduced reaction rate. Nickel layers are uniformly formed on the high aspect ratio alumina pores. Due to the uniform nickel electrode, the capacitance density of the alumina film capacitors is improved by the low leakage current, dissipation factor and equivalent series resistance. Alumina film capacitors made by ENP at 60 degrees C had a high capacitance density of 160 nF/cm2.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

Science.gov (United States)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Cross-Field Current Instabilities in Thin Ionization Layers and the Enhanced Aurora

International Nuclear Information System (INIS)

Johnson, Jay R.; Okuda, Hideo

2008-01-01

Nearly half of the time, auroral displays exhibit thin, bright layers known as 'enhanced aurora'. There is a substantial body of evidence that connects these displays with thin, dense, heavy ion layers in the E-region. Based on the spectral characteristics of the enhanced layers, it is believed that they result when wave-particle interaction heats ambient electrons to energies at or just above the 17 eV ionization energy of N2. While there are several possible instabilities that could produce suprathermal electrons in thin layers, there has been no clear theoretical investigation which examines in detail how wave instabilities in the thin ionization layers could develop and produce the suprathermal electrons. We examine instabilities which would occur in thin, dense, heavy ion layers using extensive analytical analysis combined with particle simulations. We analyze a cross field current instability that is found to be strongly unstable in the heavy ion layers. Electrostatic simulations show that substantial heating of the ambient electrons occurs with energization at or above the N2 ionization energy.

Ion beam analysis of aluminium in thin layers

International Nuclear Information System (INIS)

Healy, M.J.F.; Pidduck, A.J.; Dollinger, G.; Gorgens, L.; Bergmaier, A.

2002-01-01

This work quantifies aluminium in thin surface and near surface layers. In one example, the layer overlies a thin gallium nitride layer on an aluminium oxide substrate and in a second example the aluminium exists just below the surface of an indium arsenide substrate. The technique of non-Rutherford elastic backscattering of protons was used for the samples where aluminum in the layer of interest needed to be resolved from aluminium in the sapphire substrate and the results were corroborated at the Technische Universitaet Muenchen using heavy ion elastic recoil detection analysis. In the second example, where it was unnecessary to isolate the signal of aluminium in the layer of interest (as the substrate contained no aluminium), then the 27 Al(d,p 01 ) 28 Al nuclear reaction was used. The elastic proton scattering cross section of aluminum was found to vary very rapidly over the energy range of interest

Rheological Properties of Aqueous Nanometric Alumina Suspensions

Energy Technology Data Exchange (ETDEWEB)

Li, Chuanping [Iowa State Univ., Ames, IA (United States)

2004-01-01

Colloidal processing is an effective and reliable approach in the fabrication of the advanced ceramic products. Successful colloidal processing of fine ceramic powders requires accurate control of the rheological properties. The accurate control relies on the understanding the influences of various colloidal parameters on the rheological properties. Almost all research done on the rheology paid less attention to the interactions of particle and solvent. However, the interactions of the particles are usually built up through the media in which the particles are suspended. Therefore, interactions of the particle with the media, the adsorbed layers on the particle surface, and chemical and physical properties of media themselves must influence the rheology of the suspension, especially for the dense suspensions containing nanosized particles. Relatively little research work has been reported in this area. This thesis addresses the rheological properties of nanometric alumina aqueous suspensions, and paying more attention to the interactions between particle and solvent, which in turn influence the particle-particle interactions. Dense nanometric alumina aqueous suspensions with low viscosity were achieved by environmentally-benign fructose additives. The rheology of nanometric alumina aqueous suspensions and its variation with the particle volume fraction and concentration of fructose were explored by rheometry. The adsorptions of solute (fructose) and solvent (water) on the nanometric alumina particle surfaces were measured and analyzed by TG/DSC, TOC, and NMR techniques. The mobility of water molecules in the suspensions and its variation with particle volume fractions and fructose additive were determined by the ¹⁷O NMR relaxation method. The interactions between the nanometric alumina particles in water and fructose solutions were investigated by AFM. The results indicated that a large number of water layers were physically bound on the particles

Application of thin-layer chromatography in radiochemistry

International Nuclear Information System (INIS)

Maki, Yasuyuki; Murakami, Yukio.

1976-01-01

In relation to the experimental procedures of thin-layer chromatography (TLC) in radiochemistry, the authors explained the preparation and development of radioactive test solutions, the methods of detection by autoradiography of isolated spots and by the calculation of measuring apparatus, and the identification of isolated spots. Next they outlined the carrier-free isolation and purification of nuclides, the quantification in combination with γ-ray spectrum, confirmation of the purity of RI-labeled medical supplies, their application to RI generator, thin-layer electrophoresis, in which electrophoresis and TLC were combined, and the application of this electrophoresis to isolation in recoil chemistry and to analysis and identification in carrier-free chemistry. (Kanao, K.)

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

Science.gov (United States)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

UV and plasma treatment of thin silver layers and glass surfaces

Energy Technology Data Exchange (ETDEWEB)

Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

2006-11-10

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

UV and plasma treatment of thin silver layers and glass surfaces

International Nuclear Information System (INIS)

Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

2006-01-01

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

Approximate reflection coefficients for a thin VTI layer

KAUST Repository

Hao, Qi; Stovas, Alexey

2017-01-01

We present an approximate method to derive simple expressions for the reflection coefficients of P- and SV-waves for a thin transversely isotropic layer with a vertical symmetry axis (VTI) embedded in a homogeneous VTI background. The layer

Study of preparation and surface morphology of self-ordered nanoporous alumina; Estudo da preparacao e da morfologia de superficie de alumina nanoporosa auto-organizada

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Elisa Marchezini; Martins, Maximiliano Delany, E-mail: elisamarch@gmail.com, E-mail: MG.mdm@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG. (Brazil); Silva, Ronald Arreguy, E-mail: arregsilva@yahoo.com.br [Centro Universitario de Belo Horizonte (UniBH), Belo Horizonte, MG (Brazil)

2013-07-01

Nanoporous alumina is a typical material that exhibits self-ordered nanochannels spontaneously organized in hexagonal shape. Produced by anodizing of metallic aluminum, it has been used as a template for production of materials at the nanoscale. This work aimed to study the preparation of nanoporous alumina by anodic anodizing of metallic aluminum substrates. The nanoporous alumina was prepared following the methodology proposed by Masuda and Fukuda (1995), a two-step method consisting of anodizing the aluminum sample in the potentiostatic mode, removing the layer of aluminum oxide (alumina) formed and then repeat the anodization process under the same conditions as the first anodization. This method produces nanoporous alumina with narrow pore diameter distribution and well-ordered structure. (author)

Luminescence enhancement of a self-organised Y.sub.2./sub.O.sub.3./sub.:Eu.sup.3+./sup. thin film-coated porous alumina membrane

Czech Academy of Sciences Publication Activity Database

Abdellaoui, N.; Pereira, A.; Kandri, T.; Drouard, E.; Novotný, Michal; Moine, B.; Pillonnet, A.

2016-01-01

Roč. 4, č. 39 (2016), s. 9212-9218 ISSN 2050-7526 R&D Projects: GA MŠk LO1409; GA ČR GA16-22092S Institutional support: RVO:68378271 Keywords : pulsed laser deposition * thin film * self- organisation * alumina membrane * luminescence * photonic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.256, year: 2016

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO{sub 3} interface: Control of oxygen vacancies

Energy Technology Data Exchange (ETDEWEB)

Kormondy, Kristy J.; Posadas, Agham B.; Demkov, Alexander A., E-mail: demkov@physics.utexas.edu [Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States); Ngo, Thong Q.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Lu, Sirong; Smith, David J.; McCartney, Martha R. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Goble, Nicholas; Gao, Xuan P. A. [Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2015-03-07

In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO{sub 3} interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO{sub 3} (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼10{sup 13 }cm{sup −2} at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm{sup 2}V{sup −1}s{sup −1} at 3.2 K and room temperature mobility of 22 cm{sup 2}V{sup −1}s{sup −1}. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

Yield stress of alumina-zirconia suspensions

International Nuclear Information System (INIS)

Ramakrishnan, V.; Pradip; Malghan, S.G.

1996-01-01

The yield stress of concentrated suspensions of alumina, zirconia, and mixed alumina-zirconia powders was measured by the vane technique as a function of solids loading, relative amounts of alumina and zirconia, and pH. At the isoelectric point (IEP), the yield stress varied as the fourth power of the solids loading. The relative ratio of alumina and zirconia particles was important in determining the yield stress of the suspension at the IEP. The yield stress of single and mixed suspensions showed a marked variation with pH. The maximum value occurred at or near the IEP of the suspension. The effect of electrical double-layer forces on the yield stress can be described on the basis of the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. A normalized yield stress--that is, the ratio of the yield stress at a given pH to the yield stress at the IEP predicted by this model--showed good correlation with experimental data

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

Science.gov (United States)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

International Nuclear Information System (INIS)

Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

2013-01-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

A general analytical equation for phase diagrams of an N-layer ferroelectric thin film with two surface layers

Energy Technology Data Exchange (ETDEWEB)

Lu, Z X; Teng, B H; Rong, Y H; Lu, X H; Yang, X [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)], E-mail: phytbh@163.com

2010-03-15

Within the framework of effective-field theory with correlations, the phase diagrams of an N-layer ferroelectric thin film with two surface layers are studied by the differential operator technique based on the spin-1/2 transverse Ising model. A general analytical equation for the phase diagram of a ferroelectric thin film with arbitrary layer number as well as exchange interactions and transverse fields is derived, and then the effects of exchange interactions and transverse fields on phase diagrams are discussed for an arbitrary layer number N. Meanwhile, the crossover features, from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD), for various parameters of an N-layer ferroelectric thin film with two surface layers are investigated. As a result, an N-independent common intersection point equation is obtained, and the three-dimensional curved surfaces for the crossover values are constructed. In comparison with the usual mean-field approximation, the differential operator technique with correlations reduces to some extent the ferroelectric features of a ferroelectric thin film.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

Science.gov (United States)

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

Studies of oxide-based thin-layered heterostructures by X-ray scattering methods

Energy Technology Data Exchange (ETDEWEB)

Durand, O. [Thales Research and Technology France, Route Departementale 128, F-91767 Palaiseau Cedex (France)]. E-mail: olivier.durand@thalesgroup.com; Rogers, D. [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Universite de Technologie de Troyes, 10-12 rue Marie Curie, 10010 (France); Teherani, F. Hosseini [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Andrieux, M. [LEMHE, ICMMOCNRS-UMR 8182, Universite d' Orsay, Batiment 410, 91410 Orsay (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

2007-06-04

Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO{sub 2} and SrZrO{sub 3} thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported.

Modification of alumina matrices through chemical etching and electroless deposition of nano-Au array for amperometric sensing

Directory of Open Access Journals (Sweden)

Valinčius Gintaras

2007-01-01

Full Text Available AbstractSimple nanoporous alumina matrix modification procedure, in which the electrically highly insulating alumina barrier layer at the bottom of the pores is replaced with the conductive layer of the gold beds, was described. This modification makes possible the direct electron exchange between the underlying aluminum support and the redox species encapsulated in the alumina pores, thus, providing the generic platform for the nanoporous alumina sensors (biosensors with the direct amperometric signal readout fabrication.

Topotactic preparation of textured alumina ceramics from dehydroxylation of gibbsite films

Energy Technology Data Exchange (ETDEWEB)

Louaer, Seif-Eddine; Wang, Yao, E-mail: yao@buaa.edu.cn; Guo, Lin, E-mail: guolin@buaa.edu.cn

2014-11-14

In this paper, textured alumina ceramics were prepared from dehydroxylation of gibbsite films and the pseudomorphic and topotactic nature of the dehydroxylation of textured gibbsite films has been investigated. First, the precursor film with a (001)-textured structure was obtained via vacuum filtration deposition of diluted aqueous suspensions of gibbsite nanoplatelets. Subsequently, (001)-textured α-alumina ceramics were successfully achieved by sintering of the deposited gibbsite films without addition of α-alumina seeds. The Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD) results show that, during the phase transition from gibbsite to α-alumina, both layered morphology and crystal's axis orientation have been retained to a considerable extent. For the first time, a direct XRD evidence of gibbsite topotactic dehydroxylation to the α-alumina phase is presented. It is believed that the method described here exploits gibbsite's pseudomorphic and topotactic dehydroxylation, not on individual particles scale but on a bulk form. The resulting structure can be considered as inorganic scaffolds which can have applications for fabrication of dense, textured alumina-based ceramics and other layered/textured nanocomposites. - Highlights: • Gibbsite nanoplatelets were assembled on their basal plane to form (001)-textured films. • Textured alumina ceramics were prepared by sintering textured gibbsite films without addition of α-alumina seeds. • Both pseudomorphic and topotactic aspects were exploited in bulk form instead of individual nanoparticulate size. • Direct XRD evidence of the topotactic dehydroxylation from gibbsite to α-alumina is presented in this work.

Topotactic preparation of textured alumina ceramics from dehydroxylation of gibbsite films

International Nuclear Information System (INIS)

Louaer, Seif-Eddine; Wang, Yao; Guo, Lin

2014-01-01

In this paper, textured alumina ceramics were prepared from dehydroxylation of gibbsite films and the pseudomorphic and topotactic nature of the dehydroxylation of textured gibbsite films has been investigated. First, the precursor film with a (001)-textured structure was obtained via vacuum filtration deposition of diluted aqueous suspensions of gibbsite nanoplatelets. Subsequently, (001)-textured α-alumina ceramics were successfully achieved by sintering of the deposited gibbsite films without addition of α-alumina seeds. The Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD) results show that, during the phase transition from gibbsite to α-alumina, both layered morphology and crystal's axis orientation have been retained to a considerable extent. For the first time, a direct XRD evidence of gibbsite topotactic dehydroxylation to the α-alumina phase is presented. It is believed that the method described here exploits gibbsite's pseudomorphic and topotactic dehydroxylation, not on individual particles scale but on a bulk form. The resulting structure can be considered as inorganic scaffolds which can have applications for fabrication of dense, textured alumina-based ceramics and other layered/textured nanocomposites. - Highlights: • Gibbsite nanoplatelets were assembled on their basal plane to form (001)-textured films. • Textured alumina ceramics were prepared by sintering textured gibbsite films without addition of α-alumina seeds. • Both pseudomorphic and topotactic aspects were exploited in bulk form instead of individual nanoparticulate size. • Direct XRD evidence of the topotactic dehydroxylation from gibbsite to α-alumina is presented in this work

Chromatographic separation of rhenium in alumina-methanol/sulfuric acid system

International Nuclear Information System (INIS)

Oguma, Koichi

1983-01-01

The adsorption behavior of a number of metals on alumina was surveyed in a methanol-(0.005 -- 0.5) M H 2 SO 4 (3 : 1 v/v) developing solvent by thin-layer chromatography. Over the acid concentration range tested, Re(VII) does not favor the alumina phase to any great extent while the most other metals are strongly adsorbed on alumina. These findings allowed to establish a column chromatographic technique for selective separation of rhenium in a methanol-0.05 M H 2 SO 4 (3 : 1 v/v) eluent. The separation technique thus established was applied to molybdenite analysis for rhenium. About 100-mg powdered sample containing ca. 100 ppm rhenium was decomposed with HNO 3 and then evaporated nearly to dryness. The residue was dissolved in NH 4 OH and the excess NH 4 OH was expelled by evaporation to dryness. The residue was dissolved in 2.5-ml 0.5 M H 2 SO 4 and 10-ml water, the insoluble materials filtered off, and the filtrate diluted to exactly 25 ml with water. A 10-ml aliquot of this solution was mixed with 30-ml methanol and the mixture was passed through a column (diameter 15 mm, bed height 30 mm) containing 5 g of alumina. The column was then washed with 20 ml of a methanol-0.05 M H 2 SO 4 (3 : 1 v/v) mixture. Rhenium was recovered from the loaded solution and the subsequent washings, and was determined spectrophotometrically with Methylene Blue as a chromogenic reagent. The values obtained from four samples of molybdenite are in good agreement with those obtained by neutron activation analysis. The relative standard deviation (n = 4; calculated from the range) was between 2.0 and 5.2 %. (author)

Cauliflower hillock formation through crystallite migration of SnO2 thin films prepared on alumina substrates by using MOCVD

International Nuclear Information System (INIS)

Choi, Gwangpyo; Ryu, Hyunwook; Lee, Woosun; Hong, Kwangjun; Shin, Dongcharn; Park, Jinseong; Seo, Yongjin; Akbar, Sheikh A.

2003-01-01

Tin-oxide thin films were deposited at 375 .deg. C on α-alumina substrates by using metalorganic chemical vapor deposition (MOCVD) process. A number of hillocks were formed on the film after annealing in air at 500 .deg. C for 30 min, but fewer hillocks were formed for annealing in N 2 . The hillocks on the film and the grains on the alumina substrate were composed of crystallites. The oxygen content and the binding energy after annealing in air came to close to values for the stoichiometric SnO 2 . There was no relationship between the film thickness and the binding energy shift, but the binding energy did change with the annealing atmosphere and the oxygen content. The cauliflower hillocks on the film seem to be formed by the continuous migration of crystallites from cauliflower grains on the substrate to release the stress due to the increased oxygen content and volume. A cauliflower hillock can be grown by continuous migration of crystallites from nearby grains to the hillock.

Fabrication of a novel aluminum surface covered by numerous high-aspect-ratio anodic alumina nanofibers

OpenAIRE

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

2015-01-01

The formation behavior of anodic alumina nanofibers via anodizing in a concentrated pyrophosphoric acid under various conditions was investigated using electrochemical measurements and SEM/TEM observations. Pyrophosphoric acid anodizing at 293 K resulted in the formation of numerous anodic alumina nanofibers on an aluminum substrate through a thin barrier oxide and honeycomb oxide with narrow walls. However, long-term anodizing led to the chemical dissolution of the alumina nanofibers. The de...

Nanostructural characterization of large-scale porous alumina fabricated via anodizing in arsenic acid solution

Energy Technology Data Exchange (ETDEWEB)

Akiya, Shunta; Kikuchi, Tatsuya, E-mail: kiku@eng.hokudai.ac.jp; Natsui, Shungo; Suzuki, Ryosuke O.

2017-05-01

Highlights: • Anodic porous alumina was formed in an arsenic acid solution. • Potential difference (voltage) anodizing at 340 V was achieved. • The porous alumina was slightly ordered under the appropriate conditions. • Pore sealing behavior was not observed in boiling distilled water. • The porous alumina exhibits a white photoluminescence emission under UV irradiation. - Abstract: Anodizing of aluminum in an arsenic acid solution is reported for the fabrication of anodic porous alumina. The highest potential difference (voltage) without oxide burning increased as the temperature and the concentration of the arsenic acid solution decreased, and a high anodizing potential difference of 340 V was achieved. An ordered porous alumina with several tens of cells was formed in 0.1–0.5 M arsenic acid solutions at 310–340 V for 20 h. However, the regularity of the porous alumina was not improved via anodizing for 72 h. No pore sealing behavior of the porous alumina was observed upon immersion in boiling distilled water, and it may be due to the formation of an insoluble complex on the oxide surface. The porous alumina consisted of two different layers: a hexagonal alumina layer that contained arsenic from the electrolyte and a pure alumina honeycomb skeleton. The porous alumina exhibited a white photoluminescence emission at approximately 515 nm under UV irradiation at 254 nm.

Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

International Nuclear Information System (INIS)

Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

2012-01-01

The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

Microstructure and mechanical behavior of a shape memory Ni-Ti bi-layer thin film

Energy Technology Data Exchange (ETDEWEB)

Mohri, Maryam [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud, E-mail: nili@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Ivanisenko, Julia [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Schwaiger, Ruth [Karlsruhe Institute of Technology, Institute for Applied Materials, 76021 Karlsruhe (Germany); Hahn, Horst; Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

2015-05-29

Two different single-layers and a bi-layer Ni-Ti thin films with chemical compositions of Ni{sub 45}Ti{sub 50}Cu{sub 5}, Ni{sub 50.8}Ti{sub 49.2} and Ni{sub 50.8}Ti{sub 49.2}/Ni{sub 45}Ti{sub 50}Cu{sub 5} (numbers indicate at.%) determined by energy dispersive X-ray spectroscopy were deposited on Si (111) substrates using DC magnetron sputtering. The structures, surface morphology and transformation temperatures of annealed thin films at 500 °C for 15 min and 1 h were studied using grazing incidence X-ray diffraction, transmission electron microscopy (TEM), atomic force microscopy and differential scanning calorimetry (DSC), respectively. Nanoindentation was used to characterize the mechanical properties. The DSC and X-ray diffraction results indicated the austenitic structure of the Ni{sub 50.8}Ti{sub 49.2} and martensitic structure of the Ni{sub 45}Ti{sub 50}Cu{sub 5} thin films while the bi-layer was composed of austenitic and martensitic thin films. TEM study revealed that copper encourages crystallization in the bi-layer such that crystal structure containing nano-precipitates in the Ni{sub 45}Ti{sub 50}Cu{sub 5} layer was detected after 15 min annealing while the Ni{sub 50.8}Ti{sub 49.2} layer crystallized after 60 min at 500 °C. Furthermore, after annealing at 500 °C for 15 min, a precipitate free zone and thin layer amorphous were observed closely to the interface in the top layer. The bi-layer was completely crystallized at 500 °C for 1 h and the orientation of the Ni-rich precipitates indicated a stress gradient in the bi-layer. The bi-layer thin film showed different transformation temperatures and mechanical behavior from the single-layers. The developed bi-layer has different phase transformation temperatures, the higher temperatures of shape memory effect and lower temperature of pseudo-elastic behavior compared to the single-layers. Also, the bi-layer thin film exhibited a combined pseudo-elastic behavior and shape memory effect with a reduced

Thin layer activation techniques in research and industry

International Nuclear Information System (INIS)

Conlon, T.W.

1993-01-01

The following key application of thin layer activation technique (TLA) are discussed: ion-erosion in fusion tokamaks, bio-engineering technology, automobile industry. Future developments of the techniques, such as fission fragment TLA, multi-layer TLA and recoil implantation are discussed as well. 7 refs, 6 figs, 1 tab

Synthesis and Optical Investigations of the Guest-Host Nanostructures Alumina-SiC and Alumina-In{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Bouifoulen, A; Kassiba, A; Edely, M [Laboratoire de Physique de l' Etat Condense, UMR-CNRS 6087, Institut de recherche IRIM2F-FR-CNRS 2575-Universite du Maine, Avenue Olivier Messiaen, 72085 Le Mans Cedex 9 (France); Outzourhit, A; Oueriagli, A [Laboratoire de Physique du Solide et Couches Minces, Faculte des Sciences Semlalia, Universite Cadi Ayyad, B. P. 2390, Marrakech 40000, Maroc (Morocco); Makowska-Janusik, M [Institute of Physics, Al. Armii.Krajowej, 13/15, J. Dlugosz University, 42-200 Czestochowa (Poland); Szade, J, E-mail: kassiba@univ-lemans.fr [A.Chelkowski Institute of Physics - University Slaski in Katowice - 40-219 Katowice (Poland)

2011-04-01

Several strategies were developed to synthesise two classes of nanostructured thin films with nanocrystals of SiC (nc-SiC) or In{sub 2}O{sub 3} (nc-In{sub 2}O{sub 3}) confined in alumina. The syntheses were performed by using Rf-sputtering and co-pulverisation process of the suitable reactants. Thus, Al{sub 2}O{sub 3}/nc-SiC and Al{sub 2}O{sub 3}/nc-In{sub 2}O{sub 3} composite thin films were obtained and their structural and optical features analyzed respectively by XRD, XPS and UV-VIS absorption. The deposition conditions and the post-synthesis treatments were optimized in order to improve the crystalline character of confined nanocrystals. The optical properties were compared in the range 200 nm-1200 nm for bare alumina films or nanostructured ones with the semiconducting nanocrystals. The direct and indirect band band gaps were evaluated and discussed with regard to the stoechiometry and morphologies of the nanocomposite films

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

Science.gov (United States)

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Mathematical modeling of thin layer drying of pistachio by using solar energy

Energy Technology Data Exchange (ETDEWEB)

Midilli, A [University of Nigde (Turkey). Dept. of Mechanical Engineering; Kucuk, H [Karadeniz Technical Univ., Trabzon (Turkey). Dept. of Mechanical Engineering

2003-05-01

This paper presents a mathematical modeling of thin layer forced and natural solar drying of shelled and unshelled pistachio samples. In order to estimate and select the suitable form of solar drying curves, eight different mathematical models, which are semi-theoretical and/or empirical, were applied to the experimental data and compared according to their coefficients of determination (r,{chi}{sup 2}), which were predicted by non-linear regression analysis using the Statistical Computer Program. It was deduced that the logarithmic model could sufficiently describe thin layer forced solar drying of shelled and unshelled pistachio, while the two term model could define thin layer natural solar drying of these products in evaluation by considering the coefficients of determination, r{sub sfsd}=0.9983, {chi}{sup 2}{sub sfsd}=2.697x10{sup -5}; r{sub ufsd}=0.9990, {chi}{sup 2}{sub ufsd}=1.639x10{sup -5} for thin layer forced solar drying and r{sub snsd}=0.9990, {chi}{sup 2}{sub snsd}=3.212x10{sup -6}; r{sub unsd}=0.9970, {chi}{sup 2}{sub unsd}=4.590x10{sup -5} for thin layer natural solar drying. (Author)

Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

Energy Technology Data Exchange (ETDEWEB)

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-06

Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

Study of preparation and surface morphology of self-ordered nanoporous alumina

International Nuclear Information System (INIS)

Rodrigues, Elisa Marchezini; Martins, Maximiliano Delany; Silva, Ronald Arreguy

2013-01-01

Nanoporous alumina is a typical material that exhibits self-ordered nanochannels spontaneously organized in hexagonal shape. Produced by anodizing of metallic aluminum, it has been used as a template for production of materials at the nanoscale. This work aimed to study the preparation of nanoporous alumina by anodic anodizing of metallic aluminum substrates. The nanoporous alumina was prepared following the methodology proposed by Masuda and Fukuda (1995), a two-step method consisting of anodizing the aluminum sample in the potentiostatic mode, removing the layer of aluminum oxide (alumina) formed and then repeat the anodization process under the same conditions as the first anodization. This method produces nanoporous alumina with narrow pore diameter distribution and well-ordered structure. (author)

Critical Transitions in Thin Layer Turbulence

Science.gov (United States)

Benavides, Santiago; Alexakis, Alexandros

2017-11-01

We investigate a model of thin layer turbulence that follows the evolution of the two-dimensional motions u2 D (x , y) along the horizontal directions (x , y) coupled to a single Fourier mode along the vertical direction (z) of the form uq (x , y , z) = [vx (x , y) sin (qz) ,vy (x , y) sin (qz) ,vz (x , y) cos (qz) ] , reducing thus the system to two coupled, two-dimensional equations. Its reduced dimensionality allows a thorough investigation of the transition from a forward to an inverse cascade of energy as the thickness of the layer H = π / q is varied.Starting from a thick layer and reducing its thickness it is shown that two critical heights are met (i) one for which the forward unidirectional cascade (similar to three-dimensional turbulence) transitions to a bidirectional cascade transferring energy to both small and large scales and (ii) one for which the bidirectional cascade transitions to a unidirectional inverse cascade when the layer becomes very thin (similar to two-dimensional turbulence). The two critical heights are shown to have different properties close to criticality that we are able to analyze with numerical simulations for a wide range of Reynolds numbers and aspect ratios. This work was Granted access to the HPC resources of MesoPSL financed by the Region Ile de France and the project Equip@Meso (reference ANR-10-EQPX-29-01).

Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

2015-01-01

In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

Failure Analysis of Alumina Reinforced Aluminum Microtruss and Tube Composites

Science.gov (United States)

Chien, Hsueh Fen (Karen)

The energy absorption capacity of cellular materials can be dramatically increased by applying a structural coating. This thesis examined the failure mechanisms of alumina reinforced 3003 aluminum alloy microtrusses and tubes. Alumina coatings were produced by hard anodizing and by plasma electrolytic oxidation (PEO). The relatively thin and discontinuous oxide coating at the hinge acted as a localized weak spot which triggered a chain reaction of failure, including oxide fracture, oxide spallation, oxide penetration to the aluminum core and severe local plastic deformation of the core. For the PEO microtrusses, delamination occurred within the oxide coating resulting in a global strut buckling failure mode. A new failure mode for the anodized tubes was observed: (i) axisymmetric folding of the aluminum core, (ii) longitudinal fracture, and (iii) alumina pulverization. Overall, the alumina coating enhanced the buckling resistance of the composites, while the aluminum core supported the oxide during the damage propagation.

Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

International Nuclear Information System (INIS)

Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

1991-01-01

Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode

Hydrogen diffusion in Pb β''-alumina

International Nuclear Information System (INIS)

Bates, J.B.; Dudney, N.J.; Wang, J.C.

1985-01-01

The mobile Na + ions in Na β''-alumina can be completely exchanged with Pb 2+ ions by treatment in molten PbCl 2 . When this exchange was carried out in the presence of air, protons in the form of OH - were introduced into the conduction layers along with lead ions. Although the concentration of OH - was low, on the order of 5 x 10 -3 per formula unit of Pb/sub 0.84/Mg/sub 0.67/Al/sub 10.33/O_1_7, the distribution of OH - after ion exchange indicated that the proton mobility in Pb β''-alumina is high. The potential use of Pb β''-alumina as a fast proton conductor that is stable at 400 0 C motivated further studies of hydrogen diffusion. In this report, the results of tracer diffusion measurements by isotope exchange will be presented

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

Science.gov (United States)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

International Nuclear Information System (INIS)

Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

2017-01-01

Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

Studies of void growth in a thin ductile layer between ceramics

DEFF Research Database (Denmark)

Tvergaard, Viggo

1997-01-01

The growth of voids in a thin ductile layer between ceramics is analysed numerically, using an axisymmetric cell model to represent an array of uniformly distributed spherical voids at the central plane of the layer. The purpose is to determine the full traction-separation law relevant to crack...... growth by a ductile mechanism along the thin layer. Plastic flow in the layer is highly constrained by the ceramics, so that a high. level of triaxial tension develops, leading in some cases to cavitation instabilities. The computations are continued to a state near the occurrence of void coalescence....

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

2014-01-01

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.

2014-10-30

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Physicochemical, thin layer and gas-liquid chromatographic ...

African Journals Online (AJOL)

DELL

2012-05-22

May 22, 2012 ... PEG (3 m × 3 mm I. D.) was used for gas chromatography. Physicochemical analysis ... subjected to thin layer chromatography on plates (20 × 20 cm) having 0.25 mm thick silica gel ..... Headspace solid- phase microextraction ...

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

Energy Technology Data Exchange (ETDEWEB)

Nurhandoko, Bagus Endar B., E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com [Wave Inversion and Subsurface Fluid Imaging Research Laboratory (WISFIR), Basic Science Center A 4" t" hfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia); Susilowati, E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com [Rock Fluid Imaging Lab., Bandung (Indonesia)

2015-04-16

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied about the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia.

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

International Nuclear Information System (INIS)

thfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia))" data-affiliation=" (Wave Inversion and Subsurface Fluid Imaging Research Laboratory (WISFIR), Basic Science Center A 4thfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia))" >Nurhandoko, Bagus Endar B.; Susilowati

2015-01-01

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied about the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia

Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

International Nuclear Information System (INIS)

Herrero, J.; Guillen, C.

2004-01-01

The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

Science.gov (United States)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Diblock Copolymer/Layered Silicate Nanocomposite Thin Film Stability

Science.gov (United States)

Limary, Ratchana; Green, Peter

2000-03-01

The stability of thin film symmetric diblock copolymers blended with layered silicate nanocomposites were examined using a combination of optical microscopy, atomic force microscopy (AFM), and X-ray diffraction (XRD). Two cases were examined PS-b-PMMA (polystyrene-b-polymethylacrylate) blended with montmorillonite stoichiometrically loaded with alkyl ammonium ions, OLS(S), and PS-b-PMMA blended with montmorillonite loaded with excess alkyl ammonium ions, OLS(E). XRD spectra show an increase in the gallery spacing of the OLSs, indicating that the copolymer chains have intercalated the layered silicates. AFM images reveal a distinct difference between the two nanocomposite thin films: regions in the vicinity of OLS(S) aggregates were depleted of material, while in the vicinity of OLS(E) aggregates, dewetting of the substrate occurred. We show that the stability of the copolymer/OLS nanocomposite films is determined by the enthalpic driving force associated with intercalation of the copolymer chains into the galleries of the modified OLS layers and by the substrate/organic modifier interactions.

Electronic properties of electrolyte/anodic alumina junction during porous anodizing

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka Street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany); InnoMat GmbH, Chemnitz (Germany); Goedel, Werner A. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2007-03-15

The growth of porous oxide films on aluminum (99.99% purity), formed in 4% phosphoric acid was studied as a function of the anodizing voltage (23-53 V) using a re-anodizing technique and transmission electron microscopy (TEM) study. The chemical dissolution behavior of freshly anodized and annealed at 200 deg. C porous alumina films was studied. The obtained results indicate that porous alumina has n-type semiconductive behavior during anodizing in 4% phosphoric acid. During anodising, up to 39 V in the barrier layer of porous films, one obtains an accumulation layer (the thickness does not exceed 1 nm) where the excess electrons have been injected into the solid producing a downward bending of the conductive and valence band towards the interface. The charge on the surface of anodic oxide is negative and decreases with growing anodizing voltage. At the anodizing voltage of about 39 V, the charge on the surface of anodic oxide equals to zero. Above 39 V, anodic alumina/electrolyte junction injects protons from the electrolyte. These immobile positive charges in the surface layer of oxide together with an ionic layer of hydroxyl ions concentrated near the interface create a field, which produces an upward bending of the bands.

Formation of crystalline Zn-Al layered double hydroxide precipitates on γ-alumina: the role of mineral dissolution.

Science.gov (United States)

Li, Wei; Livi, Kenneth J T; Xu, Wenqian; Siebecker, Matthew G; Wang, Yujun; Phillips, Brian L; Sparks, Donald L

2012-11-06

To better understand the sequestration of toxic metals such as nickel (Ni), zinc (Zn), and cobalt (Co) as layered double hydroxide (LDH) phases in soils, we systematically examined the presence of Al and the role of mineral dissolution during Zn sorption/precipitation on γ-Al(2)O(3) (γ-alumina) at pH 7.5 using extended X-ray absorption fine structure spectroscopy (EXAFS), high-resolution transmission electron microscopy (HR-TEM), synchrotron-radiation powder X-ray diffraction (SR-XRD), and (27)Al solid-state NMR. The EXAFS analysis indicates the formation of Zn-Al LDH precipitates at Zn concentration ≥0.4 mM, and both HR-TEM and SR-XRD reveal that these precipitates are crystalline. These precipitates yield a small shoulder at δ(Al-27) = +12.5 ppm in the (27)Al solid-state NMR spectra, consistent with the mixed octahedral Al/Zn chemical environment in typical Zn-Al LDHs. The NMR analysis provides direct evidence for the existence of Al in the precipitates and the migration from the dissolution of γ-alumina substrate. To further address this issue, we compared the Zn sorption mechanism on a series of Al (hydr)oxides with similar chemical composition but differing dissolubility using EXAFS and TEM. These results suggest that, under the same experimental conditions, Zn-Al LDH precipitates formed on γ-alumina and corundum but not on less soluble minerals such as bayerite, boehmite, and gibbsite, which point outs that substrate mineral surface dissolution plays an important role in the formation of Zn-Al LDH precipitates.

Thin-layer electrochemistry of ferrocenylbenzene derivatives: Intramolecular electronic communication

International Nuclear Information System (INIS)

Wang, Michael C.P.; Li Yunchao; Merbouh, Nabyl; Yu, Hua-Zhong

2008-01-01

Three arylferrocene derivatives, ferrocenylbenzene (MFcB), 1,3-diferrocenylbenzene (DFcB), and 1,3,5-triferrocenylbenzene (TFcB), were prepared and their redox properties systematically explored by thin-layer cyclic voltammetry (CV) and differential-pulse voltammetry (DPV). In contrast to conventional CV measurements that produced only a single pair of redox waves for all three compounds, the thin-layer technique discriminated between the multistep electron-transfer processes of DFcB and TFcB. In particular, two and three pairs of symmetric peaks were observed, respectively, when CV curves were recorded at a graphite electrode coated with a DFcB-containing and a TFcB-containing thin film of nitrobenzene and immersed in aqueous sodium perchlorate solution. These results demonstrate that the ferrocenyl moieties attached to the meta-positions of a benzene ring communicate electronically with each other, as a result of their distinct face-to-face orientations

Viscosity of aqueous and cyanate ester suspensions containing alumina nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Lawler, Katherine [Iowa State Univ., Ames, IA (United States)

2009-01-01

The viscosities of both aqueous and cyanate ester monomer (BECy) based suspensions of alumina nanoparticle were studied. The applications for these suspensions are different: aqueous suspensions of alumina nanoparticles are used in the production of technical ceramics made by slip casting or tape casting, and the BECy based suspensions are being developed for use in an injection-type composite repair resin. In the case of aqueous suspensions, it is advantageous to achieve a high solids content with low viscosity in order to produce a high quality product. The addition of a dispersant is useful so that higher solids content suspensions can be used with lower viscosities. For BECy suspensions, the addition of nanoparticles to the BECy resin is expected to enhance the mechanical properties of the cured composite. The addition of saccharides to aqueous suspensions leads to viscosity reduction. Through DSC measurements it was found that the saccharide molecules formed a solution with water and this resulted in lowering the melting temperature of the free water according to classic freezing point depression. Saccharides also lowered the melting temperature of the bound water, but this followed a different rule. The shear thinning and melting behaviors of the suspensions were used to develop a model based on fractal-type agglomeration. It is believed that the structure of the particle flocs in these suspensions changes with the addition of saccharides which leads to the resultant viscosity decrease. The viscosity of the BECy suspensions increased with solids content, and the viscosity increase was greater than predicted by the classical Einstein equation for dilute suspensions. Instead, the Mooney equation fits the viscosity behavior well from 0-20 vol% solids. The viscosity reduction achieved at high particle loadings by the addition of benzoic acid was also investigated by NMR. It appears that the benzoic acid interacts with the surface of the alumina particle which may

Combustion chemical vapor deposition (CCVD) of LaPO4 monazite and beta-alumina on alumina fibers for ceramic matrix composites

International Nuclear Information System (INIS)

Hwang, T.J.; Hendrick, M.R.; Shao, H.; Hornis, H.G.; Hunt, A.T.

1998-01-01

This research used the low cost, open atmosphere combustion chemical vapor deposition (CCVD SM ) method to efficiently deposit protective coatings onto alumina fibers (3M Nextel TM 610) for use in ceramic matrix composites (CMCs). La-monazite (LaPO 4 ) and beta-alumina were the primary candidate debonding coating materials investigated. The coated fibers provide thermochemical stability, as well as desired debonding/sliding interface characteristics to the CMC. Dense and uniform La-phosphate coatings were obtained at deposition temperatures as low as 900-1000 C with minimal degradation of fibers. However, all of the β-alumina phases required high deposition temperatures and, thus, could not be applied onto the Nextel TM 610 alumina fibers. The fibers appeared to have complete and relatively uniform coatings around individual filaments when 420 and 1260 filament tows were coated via the CCVD process. Fibers up to 3 feet long were fed through the deposition flame in the laboratory of MicroCoating Technologies (MCT). TEM analyses performed at Wright-Patterson AFB on the CCVD coated fibers showed a 10-30 nm thick La-rich layer at the fiber/coating interface, and a layer of columnar monazite 0.1-1 μm thick covered with sooty carbon of <50 nm thick on the outside. A single strength test on CCVD coated fibers performed by 3M showed that the strength value fell in the higher end of data from other CVD coated samples. (orig.)

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

Science.gov (United States)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Outdoor open thin-layer microalgal photobioreactor: potential productivity

Czech Academy of Sciences Publication Activity Database

Doucha, Jiří; Lívanský, Karel

2009-01-01

Roč. 21, č. 1 (2009), s. 111-117 ISSN 0921-8971 Institutional research plan: CEZ:AV0Z50200510 Keywords : productivity * photobioreactor * thin layer Subject RIV: EE - Microbiology, Virology Impact factor: 1.018, year: 2009

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

Directory of Open Access Journals (Sweden)

Junsheng Liang

2016-01-01

Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Layer-by-layer thinning of MoSe_2 by soft and reactive plasma etching

International Nuclear Information System (INIS)

Sha, Yunfei; Xiao, Shaoqing; Zhang, Xiumei; Qin, Fang; Gu, Xiaofeng

2017-01-01

Highlights: • Soft plasma etching technique using SF_6 + N_2 as precursors for layer-by-layer thinning of MoSe_2 was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe_2 were also demonstrated. • Equal numbers of MoSe_2 layers can be removed uniformly without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe_2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe_2 can be changed from the indirect band gap to the direct band gap when MoSe_2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe_2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe_2 nanaosheets down to monolayer by using SF_6 + N_2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe_2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. By adjusting the etching rates we can achieve complete MoSe_2 removal and any disired number of MoSe_2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Thin hybrid pixel assembly fabrication development with backside compensation layer

Energy Technology Data Exchange (ETDEWEB)

Bates, R., E-mail: richard.bates@glasgow.ac.uk [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; McMullen, T.; Cunningham, L.; Ashby, J.; Doherty, F. [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Pares, G.; Vignoud, L.; Kholti, B. [CEA Leti, MINATEC, 17 rue des Martyrs, F38054, Grenoble (France); Vahanen, S. [Advacam Oy, Tietotie 3, 02150 Espoo (Finland)

2017-02-11

The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m{sup 2}. To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.

Morphology of one-time coated palladium-alumina composite membrane prepared by sol-gel process and electroless plating technique

Science.gov (United States)

Sari, R.; Dewi, R.; Pardi; Hakim, L.; Diana, S.

2018-03-01

Palladium coated porous alumina ceramic membrane tube was obtained using a combination of sol-gel process and electroless plating technique. The thickness, structure and composition of palladium-alumina composite membrane were analyzed by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and atomic force microscopy (AFM). Palladium particle size was 6.18 to 7.64 nm. Palladium membrane with thickness of approximately 301.5 to 815.1 nm was formed at the outer surface of the alumina layer. EDX data confirmed the formation of palladium-alumina membrane containing 45% of palladium. From this research it shows the combination of sol-gel process and electroless plating technique with one-time coating can produce a homogeneous and smoother palladium nano layer film on alumina substrate.

Thin-layer chromatography can resolve phosphotyrosine, phosphoserine, and phosphothreonine in a protein hydrolyzate

International Nuclear Information System (INIS)

Neufeld, E.; Goren, H.J.; Boland, D.

1989-01-01

A solution of propionic acid, 1 M ammonium hydroxide, and isopropyl alcohol (45/17.5/17.5, v/v) was the ascending solvent in the separation of phosphotyrosine, phosphothreonine, and phosphoserine by thin-layer chromatography. The immobile phase was cellulose. The relative migrations were 0.44, 0.38, and 0.2, respectively. A previously described thin-layer system consisting of isobutyric acid and 0.5 M ammonium hydroxide (50/30, v/v) gave very similar relative migrations. To determine the usefulness of thin-layer chromatography in phosphoamino acid analysis, the propionic acid/ammonium hydroxide/isopropyl alcohol solution was used to characterize phosphorylated residues in a plasma membrane protein which is a substrate for the insulin receptor kinase, in insulin receptor phosphorylated histone H2B, and in an in vivo phosphorylated 90000-Da protein from IM9 cells. 32 P-labeled proteins were separated by dodecyl sulfate-gel electrophoresis, digested with trypsin, and then hydrolyzed with 6 N HCl, 2 h, 110 degrees C. Following thin-layer chromatography of the hydrolyzates and autoradiography, phosphotyrosine was detected in insulin receptor substrates, and phosphoserine and phosphothreonine were found in the in vivo-phosphorylated protein. This study supports previous reports about the practicality of thin-layer chromatography in phosphoamino acid analysis and it demonstrates that a propionic acid, ammonium hydroxide, isoprophyl alcohol solution may be a useful ascending solvent mixture for this purpose

Synthesis and ceramic processing of zirconia alumina composites for application as solid oxide fuel cell electrolytes; Sintese e processamento de compositos de zirconia-alumina para aplicacao como eletrolito em celulas a combustivel de oxido solido

Energy Technology Data Exchange (ETDEWEB)

Garcia, Rafael Henrique Lazzari

2007-07-01

The global warmness and the necessity to obtain clean energy from alternative methods than petroleum raises the importance of developing cleaner and more efficient systems of energy generation, among then, the solid oxide fuel cell (SOFC). Cubic stabilized zirconia (CSZ) has been the most studied material as electrolyte in SOFC, due to its ionic conductivity and great stability at operation conditions. However, its low fracture toughness difficulties its application as a thin layer, what could lead to an improvement of cell efficiency. In this sense, the alumina addition in CSZ forms a composite, which can shift its mechanical properties, without compromising its electrical properties. In this work, coprecipitation synthesis route and ceramic processing of zirconia-alumina composites were studied, in order to establish optimum conditions to attain high density, homogeneous microstructure, and better mechanical properties than CSZ, without compromising ionic conductivity. For this purpose, composites containing up to 40 wt % of alumina, in a 9 mol % yttria-stabilized zirconia (9Y-CSZ) matrix were evaluated. In order to optimize the synthesis of the composites, a preliminary study of powder obtaining and processing were carried out, at compositions containing 20 wt % of alumina, in 9Y-CSZ. The ceramic powders were characterized by helium picnometry, X-ray diffraction, scanning electronic microscopy, transmission electronic microscopy, thermogravimetry, differential scanning calorimetry, granulometry by laser diffraction and gas adsorption (BET). The characterization of sinterized compacts were performed by X-ray diffraction, scanning electron microscopy, optical microscopy, density measurements, Vickers indentation and impedance spectroscopy. The obtained results show that the alumina addition, in the 9Y-CSZ matrix powders, raises the specific surface area, promotes deagglomeration of powders and elevates the oxides crystallization temperature, requiring higher

(AJST) THIN- LAYER DRYING OF DICED CASSAVA ROOTS

African Journals Online (AJOL)

opiyo

effect of drying temperature on thin-layer drying was high, followed by initial moisture .... The moisture content was converted to moisture ratio (MR) using the non-exponential part .... The Potential of Cassava As a Cash. Crop For Small Holder ...

Thin layer activation and ultra thin layer activation: two complementary techniques for wear and corrosion studies in various fields

International Nuclear Information System (INIS)

Sauvage, T.; Vincent, L.; Blondiaux, G.

2002-01-01

Thin layer activation (TLA) is widely used since more than 25 years to study surface wear or corrosion. This well known technique uses most of the time charged particles activation, which gives sensitivity in the range of the micrometer, except when the fluid mode of detection is utilized. In this case application of the method is limited to phenomena where we have transport of radioactive fragments to detection point. The main disadvantage of this procedure is the error due to trapping phenomena between the wear or corrosion point and detection setup. So the ultra thin layer activation (UTLA) has been developed to get nanometric sensitivity without using any fluid for radioactivity transportation, which is the main source of error of the TLA technique. In this paper we shall briefly describe the TLA technique and the most important fields of application. Then we shall emphasise on UTLA with a presentation of the principle of the method and actual running of application. The main problem concerning UTLA is calibration which requires the use of thin films (usually 10 to 100 nanometers) deposited on substrate. This process is time consuming and we shall demonstrate how running software developed in the lab can solve it. We shall finish the presentation by giving some potential application of the technique in various fields. (authors)

Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template

Directory of Open Access Journals (Sweden)

Nazila Dadvand

2007-01-01

Full Text Available A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Photochemical preparation of aluminium oxide layers via vacuum ultraviolet irradiation of a polymeric hexanoato aluminium complex

International Nuclear Information System (INIS)

Wennrich, L.; Khalil, H.; Bundesmann, C.; Decker, U.; Gerlach, J.W.; Helmstedt, U.; Manova, D.; Naumov, S.; Prager, L.

2013-01-01

By means of photochemical conversion of thin layers of a polymeric hexanoato aluminium complex as the precursor, thin aluminium oxide layers were prepared onto silicon wafers. The precursor compound was synthesized and characterized by several analytical techniques like NMR, FTIR, XPS, ICP, and found to be a polymeric aluminium-containing coordination compound which has been proposed to be a hydroxo-bridged aluminium chain with pendant hexanoyl side-chains ascertained as catena-poly[{di(κ-O,O-hexanoato)aluminium}(μ-hydroxo)] (PHAH). Thin layers deposited from a solution of PHAH in toluene onto silicon wafers were irradiated using VUV radiation from a xenon excimer lamp. The layers were characterized by XPS, XRD, XRR, and spectroscopic ellipsometry. VUV radiation with a radiant exposure of E = 36 J cm −2 led to almost carbon-free amorphous layers with a composition close to that of alumina having a density of about 2.1 g cm −3 . Thus, using the example of a polymeric aluminium complex, the potential of the photochemical conversion of metal complexes into oxides could be shown as an alternative method, in addition to sol–gel techniques, for the generation of thin plane metal-oxide layers at normal temperature and pressure. Highlights: ► A polymeric aluminium complex was synthesized and characterized by NMR, FTIR, XPS and ICP. ► Thin layers of the compound were irradiated using vacuum-UV radiation and converted to AlO x . ► Quantum-chemical calculations explain the conversion mechanism.

Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

International Nuclear Information System (INIS)

Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

2015-01-01

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

A simplified computing method of pile group to seismic loads using thin layer element

International Nuclear Information System (INIS)

Masao, T.; Hama, I.

1995-01-01

In the calculation of pile group, it is said that the results of response by thin layer method give the correct solution with the isotropic and homogeneous soil material in each layer, on the other hand this procedure spends huge computing time. Dynamic stiffness matrix of thin layer method is obtained from inversion of flexibility matrix between pile-i and pile-j. This flexibility matrix is full matrix and its size increase in proportion to the number of piles and thin layers. The greater part of run time is taken into the inversion of flexibility matrix against point loading. We propose the method of decreasing the run time for computing by reducing to banded matrix of flexibility matrix. (author)

A Novel Method for Fabricating Double Layers Porous Anodic Alumina in Phosphoric/Oxalic Acid Solution and Oxalic Acid Solution

Directory of Open Access Journals (Sweden)

Yanfang Xu

2016-01-01

Full Text Available A novel method for fabricating ordered double layers porous anodic alumina (DL-PAA with controllable nanopore size was presented. Highly ordered large pore layer with interpore distance of 480 nm was fabricated in phosphoric acid solution with oxalic acid addition at the potential of 195 V and the small pore layer was fabricated in oxalic acid solution at the potential from 60 to 100 V. Experimental results show that the thickness of large pore layer is linearly correlative with anodizing time, and pore diameter is linearly correlative with pore widening time. When the anodizing potential in oxalic acid solution was adjusted from 60 to 100 V, the small pore layers with continuously tunable interpore distance from 142 to 241 nm and pore density from 1.94×109 to 4.89×109 cm−2 were obtained. And the interpore distance and the pore density of small pore layers are closely correlative with the anodizing potential. The fabricated DL-PAA templates can be widely utilized for fabrication of ordered nanomaterials, such as superhydrophobic or gecko-inspired adhesive materials and metal or semiconductor nanowires.

Fabrication of a novel aluminum surface covered by numerous high-aspect-ratio anodic alumina nanofibers

Science.gov (United States)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

2015-11-01

The formation behavior of anodic alumina nanofibers via anodizing in a concentrated pyrophosphoric acid under various conditions was investigated using electrochemical measurements and SEM/TEM observations. Pyrophosphoric acid anodizing at 293 K resulted in the formation of numerous anodic alumina nanofibers on an aluminum substrate through a thin barrier oxide and honeycomb oxide with narrow walls. However, long-term anodizing led to the chemical dissolution of the alumina nanofibers. The density of the anodic alumina nanofibers decreased as the applied voltage increased in the 10-75 V range. However, active electrochemical dissolution of the aluminum substrate occurred at a higher voltage of 90 V. Low temperature anodizing at 273 K resulted in the formation of long alumina nanofibers measuring several micrometers in length, even though a long processing time was required due to the low current density during the low temperature anodizing. In contrast, high temperature anodizing easily resulted in the formation and chemical dissolution of alumina nanofibers. The structural nanofeatures of the anodic alumina nanofibers were controlled by choosing of the appropriate electrochemical conditions, and numerous high-aspect-ratio alumina nanofibers (>100) can be successfully fabricated. The anodic alumina nanofibers consisted of a pure amorphous aluminum oxide without anions from the employed electrolyte.

Modified Shrinking Core Model for Atomic Layer Deposition of TiO2 on Porous Alumina with Ultrahigh Aspect Ratio

International Nuclear Information System (INIS)

Park, Inhye; Leem, Jina; Lee, Hooyong; Min, Yosep

2013-01-01

When atomic layer deposition (ALD) is performed on a porous material by using an organometallic precursor, minimum exposure time of the precursor for complete coverage becomes much longer since the ALD is limited by Knudsen diffusion in the pores. In the previous report by Min et al. (Ref. 23), shrinking core model (SCM) was proposed to predict the minimum exposure time of diethylzinc for ZnO ALD on a porous cylindrical alumina monolith. According to the SCM, the minimum exposure time of the precursor is influenced by volumetric density of adsorption sites, effective diffusion coefficient, precursor concentration in gas phase and size of the porous monolith. Here we modify the SCM in order to consider undesirable adsorption of byproduct molecules. TiO 2 ALD was performed on the cylindrical alumina monolith by using titanium tetrachloride (TiCl 4 ) and water. We observed that the byproduct (i. e., HCl) of TiO 2 ALD can chemically adsorb on adsorption sites, unlike the behavior of the byproduct (i. e., ethane) of ZnO ALD. Consequently, the minimum exposure time of TiCl 4 (∼16 min) was significantly much shorter than that (∼71 min) of DEZ. The predicted minimum exposure time by the modified SCM well agrees with the observed time. In addition, the modified SCM gives an effective diffusion coefficient of TiCl 4 of ∼1.78 Χ 10 -2 cm 2 /s in the porous alumina monolith

Underpotential deposition-mediated layer-by-layer growth of thin films

Science.gov (United States)

Wang, Jia Xu; Adzic, Radoslav R.

2015-05-19

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Mathematical modelling of thin layer drying of pear

Directory of Open Access Journals (Sweden)

Lutovska Monika

2016-01-01

Full Text Available In this study, a thin - layer drying of pear slices as a function of drying conditions were examined. The experimental data set of thin - layer drying kinetics at five drying air temperatures 30, 40, 50, 60 and 70°C, and three drying air velocities 1, 1.5 and 2 m s-1 were obtained on the experimental setup, designed to imitate industrial convective dryer. Five well known thin - layer drying models from scientific literature were used to approximate the experimental data in terms of moisture ratio. In order to find which model gives the best results, numerical experiments were made. For each model and data set, the statistical performance index, (φ, and chi-squared, (χ2, value were calculated and models were ranked afterwards. The performed statistical analysis shows that the model of Midilli gives the best statistical results. Because the effect of drying air temperature and drying air velocity on the empirical parameters was not included in the base Midilli model, in this study the generalized form of this model was developed. With this model, the drying kinetic data of pear slices can be approximated with high accuracy. The effective moisture diffusivity was determined by using Fick’s second laws. The obtained values of the effective moisture diffusivity, (Deff, during drying ranged between 6.49 x 10-9 and 3.29 x 10-8 m2 s-1, while the values of activation energy (E0 varied between 28.15 to 30.51 kJ mol-1.

Application of thin-layer Navier-Stokes equations near maximum lift

Science.gov (United States)

Anderson, W. K.; Thomas, J. L.; Rumsey, C. L.

1984-01-01

The flowfield about a NACA 0012 airfoil at a Mach number of 0.3 and Reynolds number of 1 million is computed through an angle of attack range, up to 18 deg, corresponding to conditions up to and beyond the maximum lift coefficient. Results obtained using the compressible thin-layer Navier-Stokes equations are presented as well as results from the compressible Euler equations with and without a viscous coupling procedure. The applicability of each code is assessed and many thin-layer Navier-Stokes benchmark solutions are obtained which can be used for comparison with other codes intended for use at high angles of attack. Reasonable agreement of the Navier-Stokes code with experiment and the viscous-inviscid interaction code is obtained at moderate angles of attack. An unsteady solution is obtained with the thin-layer Navier-Stokes code at the highest angle of attack considered. The maximum lift coefficient is overpredicted, however, in comparison to experimental data, which is attributed to the presence of a laminar separation bubble near the leading edge not modeled in the computations. Two comparisons with experimental data are also presented at a higher Mach number.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

Synthesis of zeolite membrane (Y / α-alumina)

International Nuclear Information System (INIS)

Araujo, Ana Paula; Silva, Valmir Jose da; Crispin, Alana Carolyne; Rodrigues, Meiry Glaucia F.; Menezes, Romualdo R.

2009-01-01

The general aim of this study was to develop materials of the type: Y zeolite (hydrothermal synthesis), ceramic support (forming of powder) and zeolite membrane (rubbing). The preparation of the Y zeolite was conducted in accordance with the hydrothermal synthesis method, the time of crystallization was one day. The ceramic support was prepared by means of the forming of powder technique and subsequently subjected to sintering at a temperature of 1400 deg C/1h. The zeolite membrane (Y/α- alumina) was prepared by secondary growth method (rubbing). These materials were characterized by XRD and SEM. Obtaining Y zeolite could be confirmed by X ray diffractograms. From the images obtained by SEM, it was possible to derive from analysis that the Y zeolite is composed of a homogeneous morphology, where the particles are crowded, with uniform size. The results obtained for the ceramic support (α-alumina) showed that it displays characteristics peaks of aluminum oxide. By using micrographs it was possible to observe a heterogeneous microstructure with a compact form, without cracks upon the layers. According to the XRD, for the method of secondary growth (rubbing), it was observed that the Y zeolite which had been synthesized on the ceramic support displayed a crystalline structure. The micrography of the zeolite membrane (Y/α-alumina) showed the formation of a layer of zeolite on the ceramic support. (author)

Highway pavement performance test for colored thin anti-skidding layers

Science.gov (United States)

Gao, Wei; Cui, Wei; Xu, Ming

2018-03-01

Based on the actual service condition of highway pavement colored thin anti-skidding layers, with materials of color quartz sand and two-component acrylic resin as basis, we designed such tests as the bond strength, shearing strength, tear strength, fatigue performance and aggregate polished value, and included the freeze-thaw cycle and de-icing salt and other factors in the experiment, connecting with the climate characteristics of circumpolar latitude and low altitude in Heilongjiang province. Through the pavement performance test, it is confirmed that the colored thin anti-skidding layers can adapt to cold and humid climate conditions, and its physical mechanical properties are good.

Sorption and movement of pesticides on thin layer plates of Brazilain soils

International Nuclear Information System (INIS)

Lord, K.A.; Helene, C.G.; Andrea, M.M. de; Ruegg, E.F.

1979-01-01

The sorption from aqueous solution, and movement in water on thin layers plates of 7 soils of 3 organochlorine, 2 organophosphorus and 1 carbamate insecticide was determined in the laboratory. Generally, all substances were sorbed most and moved least on soils richest in organic matter. However, sorption was not a function of organic matter content alone. Aldrin and DDT were most strongly sorbed and did not move from the point of application on the thin layer plates of any soil. On all 7 soils, carbaryl was the least strongly sorbed insecticide. On 5 soils, lindane, parathion and malathion were increasingly strongly sorbed, but on the other 2 soils lindane was mostly strongly sorbed. The apparent greater mobility of 14 C-labelled malathion on thin layers of soils repeatedly leached could be explained by the formation of more polar substances. (author) [pt

Determination of intrinsic equilibrium constants at an alumina/electrolyte interface

Directory of Open Access Journals (Sweden)

SLOBODAN K. MILONJIC

2004-12-01

Full Text Available Intrinsic ionization and complexation constants at an alumina/electrolyte interface were studied by the site binding model, while the sorption of alkali cations from aqueous solutions was interpreted by the triple-layer model. The surface properties of alumina were investigated by the potentiometric acid-base titration method. The point of zero charge (pHpzc of alumina obtained by this method was found to be 7.2. The obtained mean values of the intrinsic protonation and ionization constants of the surface hydroxyl groups and the intrinsic surface complexation constant, in different electrolytes, are pKinta1 = 4.4, pKinta2 = 9.6 and pKintM+ = 9.5, respectively.

Synthesis and ceramic processing of zirconia alumina composites for application as solid oxide fuel cell electrolytes

International Nuclear Information System (INIS)

Garcia, Rafael Henrique Lazzari

2007-01-01

The global warmness and the necessity to obtain clean energy from alternative methods than petroleum raises the importance of developing cleaner and more efficient systems of energy generation, among then, the solid oxide fuel cell (SOFC). Cubic stabilized zirconia (CSZ) has been the most studied material as electrolyte in SOFC, due to its ionic conductivity and great stability at operation conditions. However, its low fracture toughness difficulties its application as a thin layer, what could lead to an improvement of cell efficiency. In this sense, the alumina addition in CSZ forms a composite, which can shift its mechanical properties, without compromising its electrical properties. In this work, coprecipitation synthesis route and ceramic processing of zirconia-alumina composites were studied, in order to establish optimum conditions to attain high density, homogeneous microstructure, and better mechanical properties than CSZ, without compromising ionic conductivity. For this purpose, composites containing up to 40 wt % of alumina, in a 9 mol % yttria-stabilized zirconia (9Y-CSZ) matrix were evaluated. In order to optimize the synthesis of the composites, a preliminary study of powder obtaining and processing were carried out, at compositions containing 20 wt % of alumina, in 9Y-CSZ. The ceramic powders were characterized by helium picnometry, X-ray diffraction, scanning electronic microscopy, transmission electronic microscopy, thermogravimetry, differential scanning calorimetry, granulometry by laser diffraction and gas adsorption (BET). The characterization of sinterized compacts were performed by X-ray diffraction, scanning electron microscopy, optical microscopy, density measurements, Vickers indentation and impedance spectroscopy. The obtained results show that the alumina addition, in the 9Y-CSZ matrix powders, raises the specific surface area, promotes deagglomeration of powders and elevates the oxides crystallization temperature, requiring higher

Thin-layer chromatography of radioactively labelled cholesterol and precursors from biological material

International Nuclear Information System (INIS)

Pill, J.; Aufenanger, J.; Stegmeier, K.; Schmidt, F.H.; Mueller, D.; Boehringer Mannheim G.m.b.H.

1987-01-01

The investigation methods of the action of xenobiotics on sterol biosynthesis from 14 C-acetate in rat hepatocyte cultures can be developed, with regard to extraction using Extrelut and the separation of the sterol pattern by thin-layer chromatography, in such a way that they are suitable for wider application, e.g., screening. Good visualisation and recognition of changes in the sterol pattern are possible using autoradiography of the thin-layer chromatogram. (orig.)

Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

NARCIS (Netherlands)

Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

Nonequilibrium temperatures and second-sound propagation along nanowires and thin layers

International Nuclear Information System (INIS)

Jou, D.; Cimmelli, V.A.; Sellitto, A.

2009-01-01

It is shown that the dispersion relation of heat waves along nanowires or thin layers could allow to compare two different definitions of nonequilibrium temperature, since thermal waves are predicted to propagate with different phase speed depending on the definition of nonequilibrium temperature being used. The difference is small, but it could be in principle measurable in nanosystems, as for instance nanowires and thin layers, in a given frequency range. Such an experiment could provide a deeper view on the problem of the definition of temperature in nonequilibrium situations.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

Science.gov (United States)

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Evaluation of a thin-layer chromatographic technique for ...

African Journals Online (AJOL)

Methanol extracts of both fistula and bush samples were prepared and analysed by thin-layer chromatography. Chromatoplates, when visualised under ultraviolet light, revealed a number of fluorescent compounds, some of which were common in both the fistula and bush sample extracts. By comparing the presence of ...

Thin Cell Layer technology in ornamental plant micropropagation ...

African Journals Online (AJOL)

Thin cell layer (TCL) technology originated almost 30 years ago with the controlled development of flowers, roots, shoots and somatic embryos on tobacco pedicel longitudinal TCLs. Since then TCLs have been successfully used in the micropropagation of many ornamental plant species whose previous in vitro ...

Energy transfer in porous anodic alumina/rhodamine 110 nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Elhouichet, H., E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Materiaux Mineraux et leurs Applications, Centre National de Recherches en Sciences des Materiaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Departement de Physique, Faculte des Sciences de Tunis, University of Tunis Elmanar 2092 Tunis (Tunisia); Harima, N.; Koyama, H. [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Gaponenko, N.V. [Belarusian State University of Informatics and Radioelectronics, P. Browki St. 6, 220013 Minsk (Belarus)

2012-09-15

We have used porous anodic alumina (PAA) films as templates for embedding rhodamine 110 (Rh110) molecules and examined their photoluminescence (PL) properties in detail. The analysis of the polarization memory (PM) of PL strongly suggests that there is a significant energy transfer from PAA to Rh110 molecules. The effect of annealing the PAA layer on the PL properties of the nanocomposite has been studied. The results show that the energy transfer becomes more efficient in annealed PAA. - Highlights: Black-Right-Pointing-Pointer Porous anodic alumina-rhodamine 110 nanocomposites are elaborated. Black-Right-Pointing-Pointer Efficient energy transfer from the host to Rh110 molecules is evidenced from measurements of photoluminescence and degree of polarization memory spectra. Black-Right-Pointing-Pointer Thermal annealing of porous anodic alumina can improve the process of excitation transfer.

Search for Rayleigh-Taylor instability in laser irradiated layered thin foil targets

International Nuclear Information System (INIS)

Kilkenny, J.D.; Hares, J.D.; Rumsby, P.T.

1980-01-01

An experiment to measure the Rayleigh-Taylor instability at the vacuum-ablation surface of laser irradiated layered targets by time resolved x-ray spectroscopy is described. The time taken to burn through a layer of material is measured to be the same for massive targets as for thin foil accelerating targets. It is inferred that the thin foil targets might be Rayleigh-Taylor stable despite the values of γtauapproximately equal to15 calculated from classical theory. (author)

Ultra-thin, single-layer polarization rotator

Directory of Open Access Journals (Sweden)

T. V. Son

2016-08-01

Full Text Available We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 103 when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

Thin Layer Drying Kinetics of Pineapple: Effect of Blanching ...

African Journals Online (AJOL)

Four thin-layer drying models were fitted to the experimental drying data. The .... MATLAB software package (version 6.5). The correlation ... to evaluate the goodness of fit of the simulation ... during the oven-drying process of pineapple slices.

Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

International Nuclear Information System (INIS)

Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

2006-01-01

A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

An electrochemical investigation on the dissolution of bilayered porous anodic alumina

International Nuclear Information System (INIS)

Liao, Jinfu; Ling, Zhiyuan; Li, Yi; Hu, Xing

2015-01-01

Highlights: • Pulse polarization was introduced to investigate the dissolution of PAA. • Electric field within the bilayers was estimated. • The formation of the barrier layer involves mainly solid-state processes. • The structure should be the determining factor in the dissolution of the bilayers. - Abstract: Anodic alumina attracts much research interest in many disciplines for its versatility. Meanwhile, some aspects regarding its growth are still not well-understood, such as the formation and properties of its bilayer structure. In this paper, along with capacitance measurement, pulse polarization is introduced to study the dissolution of bilayered porous anodic alumina (PAA). Combined with electron microscope observation, the electric field in the outer layer is estimated to be slightly higher than that in the inner layer. By comparing with (oxy-)hydroxide layers, the electric field distribution within barrier layer of PAA confirms that the bilayers are compact and are formed mainly by solid-state ionic migration. The changes of dissolution rates after annealing and application of electric pulses suggest that structure may be a determining factor for the dissolution behaviors of the bilayers.

First principles study of the atomic layer deposition of alumina by TMA-H2O-process.

Science.gov (United States)

Weckman, Timo; Laasonen, Kari

2015-07-14

Atomic layer deposition (ALD) is a coating technology used to produce highly uniform thin films. Aluminiumoxide, Al2O3, is mainly deposited using trimethylaluminium (TMA) and water as precursors and is the most studied ALD-process to date. However, only few theoretical studies have been reported in the literature. The surface reaction mechanisms and energetics previously reported focus on a gibbsite-like surface model but a more realistic description of the surface can be achieved when the hydroxylation of the surface is taken into account using dissociatively adsorbed water molecules. The adsorbed water changes the structure of the surface and reaction energetics change considerably when compared to previously studied surface model. Here we have studied the TMA-H2O process using density functional theory on a hydroxylated alumina surface and reproduced the previous results for comparison. Mechanisms and energetics during both the TMA and the subsequent water pulse are presented. TMA is found to adsorb exothermically onto the surface. The reaction barriers for the ligand-exchange reactions between the TMA and the surface hydroxyl groups were found to be much lower compared to previously presented results. TMA dissociation on the surface is predicted to saturate at monomethylaluminium. Barriers for proton diffusion between surface sites are observed to be low. TMA adsorption was also found to be cooperative with the formation of methyl bridges between the adsorbants. The water pulse was studied using single water molecules reacting with the DMA and MMA surface species. Barriers for these reactions were found to reasonable in the process conditions. However, stabilizing interactions amongst water molecules were found to lower the reaction barriers and the dynamical nature of water is predicted to be of importance. It is expected that these calculations can only set an upper limit for the barriers during the water pulse.

Loading Effects on Resolution in Thin Layer Chromatography and ...

Indian Academy of Sciences (India)

Home; Journals; Resonance – Journal of Science Education; Volume 10; Issue 11. Loading Effects on Resolution in Thin Layer Chromatography and Paper Chromatography. K Girigowda V H Mulimani. Classroom Volume 10 Issue 11 November 2005 pp 79-84 ...

Wear resistant PTFE thin film enabled by a polydopamine adhesive layer

International Nuclear Information System (INIS)

Beckford, Samuel; Zou, Min

2014-01-01

The influence of a polydopamine (PDA) adhesive layer on the friction and wear resistance of polytetrafluoroethylene (PTFE) thin films coated on stainless steel was investigated. The friction and wear tests were carried out using a ball on flat configuration under a normal load of 50 g, sliding speed of 2.5 mm/s, and stroke length of 15 mm. It is found that the PDA/PTFE film is able to withstand approximately 500 times more rubbing cycles than the PTFE film alone. X-ray photoelectron spectroscopy (XPS) results show that a tenacious layer of PTFE remains adhered to the PDA layer, which enables the durability of the PDA/PTFE film. Because of the relatively low thickness of the film, PDA/PTFE shows great potential for use in applications where durable, thin films are desirable

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

Science.gov (United States)

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Energy Technology Data Exchange (ETDEWEB)

Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

2014-11-10

Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

Laser-induced reaction alumina coating on ceramic composite

Science.gov (United States)

Xiao, Chenghe

Silicon carbide ceramics are susceptible to corrosion by certain industrial furnace environments. It is also true for a new class of silicon carbide-particulate reinforced alumina-matrix composite (SiCsb(P)Alsb2Osb3) since it contains more than 55% of SiC particulate within the composite. This behavior would limit the use of SiCsb(P)Alsb2Osb3 composites in ceramic heat exchangers. Because oxide ceramics corrode substantially less in the same environments, a laser-induced reaction alumina coating technique has been developed for improving corrosion resistance of the SiCsb(P)Alsb2Osb3 composite. Specimens with and without the laser-induced reaction alumina coating were subjected to corrosion testing at 1200sp°C in an air atmosphere containing Nasb2COsb3 for 50 ˜ 200 hours. Corroded specimens were characterized via x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The uncoated SiCsbP/Alsb2Osb3 composite samples experienced an initial increase in weight during the exposure to Nasb2COsb3 at 1200sp°C due to the oxidation of residual aluminum metal in the composite. There was no significant weight change difference experienced during exposure times between 50 and 200 hours. The oxidation layer formed on the as-received composite surface consisted of Si and Alsb2Osb3 (after washing with a HF solution). The oxidation layer grew outward and inward from the original surface of the composite. The growth rate in the outward direction was faster than in the inward direction. The formation of the Si/Alsb2Osb3 oxidation layer on the as-received composite was nonuniform, and localized corrosion was observed. The coated samples experienced very little mass increase. The laser-induced reaction alumina coating effectively provided protection for the SiCsbP/Alsb2Osb3 composite by keeping the corrodents from contacting the composite and by the formation of some refractory compounds such as Nasb2OAlsb2Osb3SiOsb2 and Nasb2Alsb{22}Osb

Use of a wedge cuvette in thin layer photometry and its application to oximetry

NARCIS (Netherlands)

Spaan, J. A.; Garred, L. J.; van de Borne, P.

1977-01-01

A wedge cuvette was constructed by fixing 2 glass plates at a known angle with a spacer at one end. This resulted in a thin layer with thickness varying from 0 to 250 micrometer. By measuring the intensity of a beam of light through the thin layer as a function of distance along the wedge (and thus

A simple model for quantifying the degree of layer-by-layer growth in low energy ion deposition of thin films

International Nuclear Information System (INIS)

Huhtamaeki, T.; Jahma, M.O.; Koponen, I.T.

2007-01-01

Layer-by-layer growth of thin films can be promoted by using low energy ion deposition (LEID) techniques. The basic process affecting the growth are often quite diverse, but often the ion impact induced inter layer mass transfer processes due to adatom insertion to lower step edges or pile-ups to step edges above dominate. In this paper we propose a simple phenomenological model which describes the growth of thin films in LEID under these conditions. The model makes possible to distinguish the dominant growth, the detection of the transition from the 3D growth to 2D growth, and it can be used to quantify the degree of layer-by-layer growth. The model contains only two parameters, which can be phenomenologically related to the properties of the bombarding ion beam

Accretion disc boundary layers - geometrically and optically thin case

International Nuclear Information System (INIS)

Regev, Oded; Hougerat, A.A.

1988-01-01

The method of matched asymptotic expansions is applied to an optically and geometrically thin boundary layer between an accretion disc and the accreting star. Analytical solutions are presented for a particular viscosity prescription in the boundary layer. For a typical example we find that the disc closely resembles standard steady-disc theory. It is identical to it everywhere save a narrow boundary layer, where the temperature increases rapidly inward (by an order of magnitude), the angular velocity achieves maximum and decreases to its surface value and other variables also undergo rapid changes. This and previous work can now be used to calculate the emission from accretion discs including the boundary layers for a wide range of parameters. (author)

Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

Science.gov (United States)

Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

1995-09-01

Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

Layer-by-layer thinning of MoSe{sub 2} by soft and reactive plasma etching

Energy Technology Data Exchange (ETDEWEB)

Sha, Yunfei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Xiao, Shaoqing, E-mail: larring0078@hotmail.com [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Zhang, Xiumei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Qin, Fang [Analysis & Testing Center, Jiangnan University, Wuxi 214122 (China); Gu, Xiaofeng, E-mail: xfgu@jiangnan.edu.cn [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2017-07-31

Highlights: • Soft plasma etching technique using SF{sub 6} + N{sub 2} as precursors for layer-by-layer thinning of MoSe{sub 2} was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe{sub 2} were also demonstrated. • Equal numbers of MoSe{sub 2} layers can be removed uniformly without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe{sub 2}) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe{sub 2} can be changed from the indirect band gap to the direct band gap when MoSe{sub 2} changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe{sub 2} layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe{sub 2} nanaosheets down to monolayer by using SF{sub 6} + N{sub 2} plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe{sub 2} layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. By adjusting the etching rates we can achieve complete MoSe{sub 2} removal and any disired number of MoSe{sub 2} layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

International Nuclear Information System (INIS)

Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

2008-01-01

The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes

International Nuclear Information System (INIS)

Bouifoulen, A.; Edely, M.; Errien, N.; Kassiba, A.; Outzourhit, A.; Makowska-Janusik, M.; Gautier, N.; Lajaunie, L.; Oueriagli, A.

2011-01-01

Nanocrystals of indium oxide (In 2 O 3 ) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures during the deposition process were modified and their effects characterized on the structural and physical properties of alumina-In 2 O 3 films. Complementary investigation methods including X-ray diffraction, optical transmittance in the range 250-1100 nm and transmission electron microscopy were used to analyze the nanostructured films. The crystalline order, morphology and optical responses were monitored as function of the deposition parameters and the post-synthesis annealing. The optimal conditions were found and allow realizing suitable nanostructured films with a major crystalline order of cubic phase for the In 2 O 3 nanocrystals. The optical properties of the films were analyzed and the key parameters such as direct and indirect band gaps were evaluated as function of the synthesis conditions and the crystalline quality of the films.

Uranyl sorption onto alumina

International Nuclear Information System (INIS)

Jacobsson, A.M.M.

1997-01-01

The mechanism for the adsorption of uranyl onto alumina from aqueous solution was studied experimentally and the data were modeled using a triple layer surface complexation model. The experiments were carried out at low uranium concentrations (9 x 10 -11 --5 x 10 -8 M) in a CO 2 free environment at varying electrolyte concentrations (0.01--1 M) and pH (4.5--12). The first and second acid dissociation constants, pK a1 and pK a2 , of the alumina surface were determined from potentiometric titrations to be 7.2 ± 0.6 and 11.2 ± 0.4, respectively. The adsorption of uranium was found to be independent of the electrolyte concentration. The authors therefore conclude that the uranium binds as an inner sphere complex. The results were modeled using the code FITEQL. Two reactions of uranium with the surface were needed to fit the data, one forming a uranyl complex with a single surface hydroxyl and the other forming a bridged or bidentate complex reacting with two surface hydroxyls of the alumina. There was no evidence from these experiments of site heterogeneity. The constants used for the reactions were based in part on predictions made utilizing the Hard Soft Acid Base, HSAB, theory, relating the surface complexation constants to the hydrolysis of the sorbing metal ion and the acid dissociation constants of the mineral oxide surface

Method for the manufacture of a thin-layer battery stack on a three-dimensional substrate

NARCIS (Netherlands)

2008-01-01

The invention relates to a method for the manufacture of a thin-layer battery stack on a three-dimensional substrate. The invention further relates to a thin-layer battery stack on a three-dimensional substrate obtainable by such a method. Moreover, the invention relates to a device comprising such

Thin-Layer Solutions of the Helmholtz and Related Equations

KAUST Repository

Ockendon, J. R.

2012-01-01

This paper concerns a certain class of two-dimensional solutions to four generic partial differential equations-the Helmholtz, modified Helmholtz, and convection-diffusion equations, and the heat conduction equation in the frequency domain-and the connections between these equations for this particular class of solutions.S pecifically, we consider thin-layer solutions, valid in narrow regions across which there is rapid variation, in the singularly perturbed limit as the coefficient of the Laplacian tends to zero.F or the wellstudied Helmholtz equation, this is the high-frequency limit and the solutions in question underpin the conventional ray theory/WKB approach in that they provide descriptions valid in some of the regions where these classical techniques fail.E xamples are caustics, shadow boundaries, whispering gallery, and creeping waves and focusing and bouncing ball modes.It transpires that virtually all such thin-layer models reduce to a class of generalized parabolic wave equations, of which the heat conduction equation is a special case. Moreover, in most situations, we will find that the appropriate parabolic wave equation solutions can be derived as limits of exact solutions of the Helmholtz equation.W e also show how reasonably well-understood thin-layer phenomena associated with any one of the four generic equations may translate into less well-known effects associated with the others.In addition, our considerations also shed some light on the relationship between the methods of matched asymptotic, WKB, and multiple-scales expansions. © 2012 Society for Industrial and Applied Mathematics.

Comparison of two detection methods in thin layer chromatographic ...

African Journals Online (AJOL)

o-tolidine plus potassium iodide and photosynthesis inhibition detection methods were investigated for the analysis of three triazine herbicides (atrazine, ametryne, simazine) and two urea herbicides (diuron, metobromuron) in a coastal savanna soil using thin layer chromatography to compare the suitability of the two ...

Pre-staining thin layer chromatography method for amino acid ...

African Journals Online (AJOL)

Jane

2010-12-13

Dec 13, 2010 ... inexpensive and the results obtained were clean and reproducible. However, it is suitable for the high throughput screening of amino acid-producing strains. Key words: Thin layer chromatography, pre-staining, amino acid detection. INTRODUCTION. Several analytical techniques have been often used for.

Dynamic tensile response of alumina-Al composites

International Nuclear Information System (INIS)

Atisivan, R.; Bandyopadhyay, A.; Gupta, Y. M.

2002-01-01

Plate impact experiments were carried out to examine the high strain-rate tensile response of alumina-aluminum (Al) composites with tailored microstructures. A novel processing technique was used to fabricate interpenetrating phase alumina-aluminum composites with controlled microstructures. Fused deposition modeling (FDM), a commercially available rapid prototyping technique, was used to produce the controlled porosity mullite ceramic preforms. Alumina-Al composites were then processed via reactive metal infiltration of porous mullite ceramics. With this approach, both the micro as well as the macro structures can be designed via computer aided design (CAD) to tailor the properties of the composites. Two sets of dynamic tensile experiments were performed. In the first, the metal content was varied between 23 and 39 wt. percent. In the second, the microstructure was varied while holding the metal content nearly constant. Samples with higher metal content, as expected, displayed better spall resistance. For a given metal content, samples with finer metal diameter showed better spall resistance. Relationship of the microstructural parameters on the dynamic tensile response of the structured composites is discussed here

Thin layer activation: measuring wear and corrosion

International Nuclear Information System (INIS)

Delvigne, T.; Leyman, D.; Oxorn, K.

1995-01-01

The technique known as thin layer activation (TLA) is explained and assessed in this article. Widely used, in for example the automotive industry, TLA allows on-line monitoring of the loss of matter from a critical surface, by wear erosion and corrosion. The technique offers extremely high sensitivity thus leading to reduced test times. On-line wear phenomena can be assessed during operation of a mechanical process, even through thick engine walls. (UK)

[Interface bond and compatibility between GI-II glass/alumina composite and Vitadur alpha veneering porcelain].

Science.gov (United States)

Meng, Yukun; Chao, Yonglie; Liao, Yunmao

2002-01-01

Multiple layer techniques were commonly employed in fabricating all-ceramic restorations. Bond and compatibility between layers were vitally important for the clinical success of the restorations. The purposes of this study were to investigate the bond of the interface between the GI-II glass/alumina composite and Vitadur alpha veneering porcelain, and to study the thermal compatibility between them. Prepared a bar shaped specimen of GI-II glass/alumina composite 25 mm x 5 mm x 1 mm in size, with bottom surface pre-notched. The upper surface was veneered with Vitadur alpha veneering porcelain (0.2 mm opaque dentin and 0.6 mm dentin porcelain), then fractured and the fracture surface were examined under scanning electron microscope (SEM) and electron microprobe analyzer (EMPA) with electron beam of 10 micrometer in diameter; ten all-ceramic single crowns for an upper right central incisor were fabricated and the temperatures of thermal shock resistance were tested. SEM observation showed tight bond between the composite and the porcelain; The results of EMPA showed that penetration of Na, Al elements from glass/alumina into veneering porcelain and Si, K, Ca elements from veneering porcelain into glass/alumina occurred after sintering baking; The temperature of thermal shock resistance for anterior crowns in this study was 158 +/- 10.3 degrees C, cracks were mainly distributed in veneering porcelain with thicker layer. Chemical bond exists between the GI-II glass/alumina composite and Vitadur alpha veneering porcelain, and there is good thermal compatibility between them.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

2013-09-30

Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

Science.gov (United States)

Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

2018-05-01

The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

Formation of hydrated layers in PMMA thin films in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Akers, Peter W. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); Nelson, Andrew R.J. [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Menai, NSW (Australia); Williams, David E. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand); McGillivray, Duncan J., E-mail: d.mcgillivray@auckland.ac.nz [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand)

2015-10-30

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Formation of hydrated layers in PMMA thin films in aqueous solution

International Nuclear Information System (INIS)

Akers, Peter W.; Nelson, Andrew R.J.; Williams, David E.; McGillivray, Duncan J.

2015-01-01

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Note: Automatic layer-by-layer spraying system for functional thin film coatings

Science.gov (United States)

Seo, Seongmin; Lee, Sangmin; Park, Yong Tae

2016-03-01

In this study, we have constructed an automatic spray machine for producing polyelectrolyte multilayer films containing various functional materials on wide substrates via the layer-by-layer (LbL) assembly technique. The proposed machine exhibits advantages in terms of automation, process speed, and versatility. Furthermore, it has several features that allow a fully automated spraying operation, such as various two-dimensional spraying paths, control of the flow rate and operating speed, air-assist fan-shaped twin-fluid nozzles, and an optical display. The robot uniformly sprays aqueous mixtures containing complementary (e.g., oppositely charged, capable of hydrogen bonding, or capable of covalent bonding) species onto a large-area substrate. Between each deposition of opposite species, samples are spray-rinsed with deionized water and blow-dried with air. The spraying, rinsing, and drying areas and times are adjustable by a computer program. Twenty-bilayer flame-retardant thin films were prepared in order to compare the performance of the spray-assisted LbL assembly with a sample produced by conventional dipping. The spray-coated film exhibited a reduction of afterglow time in vertical flame tests, indicating that the spray-LbL technique is a simple method to produce functional thin film coatings.

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

2013-01-01

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

KAUST Repository

Ip, Alexander H.

2013-12-23

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells. © 2013 AIP Publishing LLC.

Using thin metal layers on composite structures for shielding the electromagnetic pulse caused by nearby lightning

NARCIS (Netherlands)

Blaj, M.A.; Buesink, Frederik Johannes Karel; Damstra, G.C.; Leferink, Frank Bernardus Johannes

2011-01-01

Electronic systems in composite structures could be vulnerable to the (dominant magnetic) field caused by a lightning strike, because only thin layers of metal can be used on composite structures. Thin layers result in a very low shielding effectiveness against magnetic fields. Many experiments

Voltammetric Thin-Layer Ionophore-Based Films: Part 2. Semi-Empirical Treatment.

Science.gov (United States)

Yuan, Dajing; Cuartero, Maria; Crespo, Gaston A; Bakker, Eric

2017-01-03

This work reports on a semiempirical treatment that allows one to rationalize and predict experimental conditions for thin-layer ionophore-based films with cation-exchange capacity read out with cyclic voltammetry. The transition between diffusional mass transport and thin-layer regime is described with a parameter (α), which depends on membrane composition, diffusion coefficient, scan rate, and electrode rotating speed. Once the thin-layer regime is fulfilled (α = 1), the membrane behaves in some analogy to a potentiometric sensor with a second discrimination variable (the applied potential) that allows one to operate such electrodes in a multianalyte detection mode owing to the variable applied ion-transfer potentials. The limit of detection of this regime is defined with a second parameter (β = 2) and is chosen in analogy to the definition of the detection limit for potentiometric sensors provided by the IUPAC. The analytical equations were validated through the simulation of the respective cyclic voltammograms under the same experimental conditions. While simulations of high complexity and better accuracy satisfactorily reproduced the experimental voltammograms during the forward and backward potential sweeps (companion paper 1), the semiempirical treatment here, while less accurate, is of low complexity and allows one to quite easily predict relevant experimental conditions for this emergent methodology.

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Interface chemistry of nanostructured materials: ion adsorption on mesoporous alumina.

Science.gov (United States)

Wang, Yifeng; Bryan, Charles; Xu, Huifang; Pohl, Phil; Yang, Yi; Brinker, C Jeffrey

2002-10-01

This paper presents a part of our work on understanding the effect of nanoscale pore space confinement on ion sorption by mesoporous materials. Acid-base titration experiments were performed on both mesoporous alumina and alumina particles under various ionic strengths. The point of zero charge (PZC) for mesoporous alumina was measured to be approximately 9.1, similar to that for nonmesoporous alumina materials, indicating that nanoscale pore space confinement does not have a significant effect on the PZC of pore surfaces. However, for a given pH deviation from the PZC, (pH-PZC), the surface charge per mass on mesoporous alumina was as much as 45 times higher than that on alumina particles. This difference cannot be fully explained by the surface area difference between the two materials. Our titration data have demonstrated that nanoscale confinement has a significant effect, most likely via the overlap of the electric double layer (EDL), on ion sorption onto mesopore surfaces. This effect cannot be adequately modeled by existing surface complexation models, which were developed mostly for an unconfined solid-water interface. Our titration data have also indicated that the rate of ion uptake by mesoporous alumina is relatively slow, probably due to diffusion into mesopores, and complete equilibration for sorption could take 4-5 min. A molecular simulation using a density functional theory was performed to calculate ion adsorption coefficients as a function of pore size. The calculation has shown that as pore size is reduced to nanoscales (<10 nm), the adsorption coefficients of ions can vary by more than two orders of magnitude relative to those for unconfined interfaces. The prediction is supported by our experimental data on Zn sorption onto mesoporous alumina. Owing to their unique surface chemistry, mesoporous materials can potentially be used as effective ion adsorbents for separation processes and environmental cleanup.

Synthesis and separation properties of an α-alumina-supported high-silica MEL membrane

NARCIS (Netherlands)

Kosinov, N.; Hensen, E.J.M.

2013-01-01

A thin high-silica MEL membrane was synthesized on a porous a-alumina hollow fiber support by a secondary growth approach. The membrane quality was evaluated by permporometry, single-gas permeation and butane isomer separation. Comparison of the pervaporation performance of MEL membranes with a MFI

Layer-controllable graphene by plasma thinning and post-annealing

Science.gov (United States)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin, E-mail: junsin@skku.edu

2017-02-28

Highlights: • The characteristics of thin film transistors using double active layers are examined. • Electrical characteristics have been improved for the double active layers devices. • The total trap density can be decreased by insert-ion of ultrathin ITO film. - Abstract: This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm{sup 2}/V·s) compared with the ITZO-only TFTs (∼34 cm{sup 2}/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39 V compared with 6.10 and −6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E{sub A} were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO{sub 2} reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Effect of the local electric field on the formation of an ordered structure in porous anodic alumina

Science.gov (United States)

Lazarouk, S. K.; Katsuba, P. S.; Leshok, A. A.; Vysotskii, V. B.

2015-09-01

Experimental data and a model are presented, and the electric field that appears in porous alumina during electrochemical anodic oxidation of aluminum in electrolytes based on an aqueous solution of oxalic acid at a voltage of 90-250 V is calculated. It is found that the electric field in the layers with a porosity of 1-10% in growing alumina reaches 109-1010 V/m, which exceeds the electric strength of the material and causes microplasma patterns emitting visible light at the pore bottom, the self-organization of the structure of porous alumina, and the anisotropy of local porous anodizing. Moreover, other new effects are to be expected during aluminum anodizing under the conditions that ensure a high electric field inside the barrier layer of porous oxide.

Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

International Nuclear Information System (INIS)

Oubelkacem, A.; Essaoudi, I.; Ainane, A.; Saber, M.; Dujardin, F.

2011-01-01

The transition properties of a ferroelectric thin film with seeding layers were studied using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions. The effect of interaction parameters for the seeding layer on the phase diagram was also examined. We calculated the critical temperature and the polarization of the ferroelectric thin film for different seeding layer structures. We found that the seeding layer can greatly increase the Curie temperature and the polarization.

Thin film photovoltaic devices with a minimally conductive buffer layer

Science.gov (United States)

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Low Energy Scanned Electron-Beam Dose Distribution in Thin Layers

DEFF Research Database (Denmark)

McLaughlin, W. L.; Hjortenberg, P. E.; Pedersen, Walther Batsberg

1975-01-01

Thin radiochromic dye film dosimeters, calibrated by means of calorimetry, make possible the determination of absorbed-dose distributions due to low-energy scanned electron beam penetrations in moderately thin coatings and laminar media. For electrons of a few hundred keV, calibrated dosimeters...... of about 30–60 μm thickness may be used in stacks or interleaved between layers of materials of interest and supply a sufficient number of experimental data points throughout the depth of penetration of electrons to provide a depth-dose curve. Depth doses may be resolved in various polymer layers...... on different backings (wood, aluminum, and iron) for scanned electron beams (Emax = 400 keV) having a broad energy spectrum and diffuse incidence, such as those used in radiation curing of coatings, textiles, plastics, etc. Theoretical calculations of such distributions of energy depositions are relatively...

Effect of residual stress in layered ceramic microcomposites on crack propagation during fracture

International Nuclear Information System (INIS)

Tomaszewski, H.; Strzeszewski, J.; Gebicki, W.

1998-01-01

Laminar composites, containing layers of Y-ZrO 2 and either Al 2 O 3 or a mixture of Al 2 O 3 and ZrO 2 have been fabricated using a sequential centrifuging technique of water solutions containing of suspended particles. Controlled crack growth experiments with notched beams of composites were done and showed the significant effect of barrier layer thickness and composition of the crack propagation path during fracture. Distinct crack deflection in alumina layers was observed. The increase of crack deflection angle with the alumina layer thickness was also found. In the case of the barrier layer made of mixture, crack deflection did not occur independently on layer thickness. The observed changes have been correlated with the radial distribution of residual stresses in barrier layers created during cooling of sintered composites from fabrication temperature. The stress found were the result of the differences in the thermal expansion and sintering shrinkage of alumina and zirconia and the crystallographically anisotropic thermal expansion of the alumina. The residual stress distribution has been measured by piezo-spectroscopy based on the optical fluorescence of Cr + dopants in alumina. (author)

Estimation of optical constants of a bio-thin layer (onion epidermis), using SPR spectroscopy

International Nuclear Information System (INIS)

Rehman, Saif-ur-; Hayashi, Shinji; Sekkat, Zouheir; Mumtaz, Huma; Shaukat, S F

2014-01-01

We estimate the optical constants of a biological thin layer (Allium cepa) by surface plasmon resonance (SPR) spectroscopy. For this study, the fresh inner thin epidermis of an onion bulb was used and stacked directly on gold (Au) and silver (Ag) film surfaces in order to identify the shift in SPR mode of each metal film at an operating wavelength of 632.8 nm. The thickness and dielectric constants of the biological thin layer were determined by matching the experimental SPR curves to theoretical ones. The thickness and roughness of bare Au and Ag thin films were also measured by atomic force microscopy (AFM); the results of which are in good agreement with those obtained through experiment. Due to the high surface roughness of the natural onion epidermis layer, AFM could not measure the exact thickness of an onion epidermis. It is estimated that the value of the real part of the dielectric constant of an onion epidermis is between the dielectric constants of water and air. (paper)

Preparation of sodium beta″-alumina electrolyte thin film by electrophoretic deposition using Taguchi experimental design approach

International Nuclear Information System (INIS)

Wei, Xiao-ling; Xia, Yi; Liu, Xiao-min; Yang, Hui; Shen, Xiao-dong

2014-01-01

Highlights: • Sodium beta″ alumina electrolyte thin film is successfully prepared via electrophoretic deposition. • The ionic conductivity of the optimized electrolyte disk is 0.138 S cm -1 . • A Daniell-typed cell is built which approves the reversible Na + conduction at only 100 °C. - Abstract: With the desire to lowering the working temperature of Na-β″-Al 2 O 3 solid electrolyte (BASE) based batteries, electrophoretic deposition process is employed to fabricate 300 μm thick Na-β″-Al 2 O 3 sheet with densification microstructure and high ionic conductivity. Taguchi design of experiment approach with signal to noise ratio analysis is utilized to optimize the operation parameters. The results show that the TiO 2 content in the precursor powders is critical to determine the ionic conductivity of the resulting electrolyte. X-Ray diffraction analysis and X-ray photoelectron spectroscopy examination point out that Ti 4+ can enter the crystal lattice of Na-β″-Al 2 O 3 , which results in the variation of lattice parameters, densifies the microstructure and improves both β″ phase content and ionic conductivity of the resulting sample. The thin Na-β″-Al 2 O 3 disk obtained under the optimized conditions Exhibit 97% β″ phase content and relatively high ionic conductivity. Moreover, a Daniell-typed cell built with this optimized sample disk, using copper/zinc redox couples as electrodes and 1 M NaBF 4 in DMSO as the secondary electrolyte, shows reversible charge and discharge behaviors at relatively low temperature, 100 °C

Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

DEFF Research Database (Denmark)

Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

Electrochemically grown metallic nanocomb structures on nanoporous alumina templates

International Nuclear Information System (INIS)

Kaya, Savas; Atar, Erdem

2011-01-01

Electrochemical growth of metallic nanocomb structures on anodized alumina templates is described. Nanocombs originate from the orderly growth and merger of very thin (d=15±5 nm) metallic nanowires which do not completely fill much larger pores (d∼100 nm) in the alumina template (t≤3 μm). Instead, the nanowires prefer growing along the inner corners of the hexagonal pores, coalescing into a highly ordered structure as they emerge, resulting a metallic form reminiscent of the topology of the original template. We disclose here the typical processing conditions and the microstructure of this previously unknown material as observed with a scanning electron microscope (SEM) and energy dispersive x-ray (EDX) spectroscopy. It is shown that Au nanocombs have an anomalous EDX spectra and can emit electrons at a field of ∼1 kV/cm.

Pore radius fine tuning of a silica matrix (MCM-41) based on the synthesis of alumina nanolayers with different thicknesses by atomic layer deposition

International Nuclear Information System (INIS)

Zemtsova, Elena G.; Arbenin, Andrei Yu.; Plotnikov, Alexander F.; Smirnov, Vladimir M.

2015-01-01

The authors investigated a new approach to modify the surface of the mesoporous silica matrix MCM-41. This approach is based on manipulating the chemical composition of the porous surface layer and also on fine tuning the pore radius by applying the atomic layer deposition (ALD) technique. The synthesis of alumina nanolayers was performed on the planar and the porous matrix (MCM-41) by the ALD technique using aluminum tri-sec-butoxide and water as precursors. The authors show that one cycle on silicon, using aluminum tri-sec-butoxide and water as precursors, results in a 1–1.2 Å increase in alumina nanolayer thickness. This is comparable to the increase in thickness per cycle for other precursors such as trimethylaluminum and aluminum chloride. The authors show that the synthesis of an Al 2 O 3 nanolayer on the pore surface of the mesoporous silica matrix MCM-41 by the ALD technique results in a regular change in the porous structure of the samples. The specific porosity (ml/g) of the MCM-41 was 0.95 and that of MCM-41 after 5 ALD cycles was 0.39. The pore diameter (nm) of MCM-41 was 3.3 and that of MCM-41 after 5 ALD cycles was 2.3

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

Science.gov (United States)

Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2018-02-01

Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

A thin-layer liquid culture technique for the growth of Helicobacter pylori.

Science.gov (United States)

Joo, Jung-Soo; Park, Kyung-Chul; Song, Jae-Young; Kim, Dong-Hyun; Lee, Kyung-Ja; Kwon, Young-Cheol; Kim, Jung-Min; Kim, Kyung-Mi; Youn, Hee-Shang; Kang, Hyung-Lyun; Baik, Seung-Chul; Lee, Woo-Kon; Cho, Myung-Je; Rhee, Kwang-Ho

2010-08-01

Several attempts have been successful in liquid cultivation of Helicobaccter pylori. However, there is a need to improve the growth of H. pylori in liquid media in order to get affluent growth and a simple approach for examining bacterial properties. We introduce here a thin-layer liquid culture technique for the growth of H. pylori. A thin-layer liquid culture system was established by adding liquid media to a 90-mm diameter Petri dish. Optimal conditions for bacterial growth were investigated and then viability, growth curve, and released proteins were examined. Maximal growth of H. pylori was obtained by adding 3 mL of brucella broth supplemented with 10% horse to a Petri dish. H. pylori grew in both DMEM and RPMI-1640 supplemented with 10% fetal bovine serum and 0.5% yeast extract. Serum-free RPMI-1640 supported the growth of H. pylori when supplemented with dimethyl-beta-cyclodextrin (200 microg/mL) and 1% yeast extract. Under optimal growth, H. pylori grew exponentially for 28 hours, reaching a density of 3.4 OD(600) with a generation time of 3.3 hours. After 24 hours, cultures at a cell density of 1.0 OD(600) contained 1.3 +/- 0.1 x 10(9 )CFU/mL. gamma-Glutamyl transpeptidase, nuclease, superoxide dismutase, and urease were not detected in culture supernatants at 24 hours in thin-layer liquid culture, but were present at 48 hours, whereas alcohol dehydrogenase, alkylhydroperoxide reductase, catalase, and vacuolating cytotoxin were detected at 24 hours. Thin-layer liquid culture technique is feasible, and can serve as a versatile liquid culture technique for investigating bacterial properties of H. pylori.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Development of solar selective absorber layers on aluminium. Final report; Entwicklung solarselektiver Absorberschichten auf Aluminium fuer Solarkollektoren. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Hoenicke, D.; Moeller, T.; Schwarz, T.

1998-01-31

A new electrolytic process was developed to form solar selective layers on aluminium. In the developed process, both the formation of the alumina layer and the deposition of metals into the layer takes place in only one treatment step using a single electrolysis bath. The main step of the so called ISOC-method (impulse structured oxide ceramic) is the anodic oxidation of aluminium which was carried out by using a pulse technique at different voltages. During the anodic polarisation a thin alumina ceramic layer was formed, while the cathodic led to the metal deposition as copper and nickel. The conditions of the electrolysis were varied in order to estimate optimal parameters achieving solar selective layers with high selectivity. Furthermore, a scale-up of the lab scale apparatus to a mini plant was carried out. Finally, the corrosion resistance of the absorber layers was improved by the formation of a thin hydrophobic overlayer using a sol-gel treatment. (orig.) [Deutsch] Ein neuartiges Behandlungsverfahren zur Erzeugung von solarselektiven Absorberschichten auf Aluminium wurde entwickelt. Bei dieser elektrochemischen Behandlung wird in einem Einstufenprozess mit einem Elektrolyten durch eine Kombination von anodischer Oxidation und bipolarer Pulsbehandlung auf der Oberflaeche des Aluminiums eine impulsstrukturierte Oxidkeramik (ISOK) erzeugt. Dabei entsteht durch eine anodische Oxidation eine strukturierte Aluminiumoxidschicht. Bei der bipolaren Pulsbehandlung erfolgt dann eine Abscheidung der im ISOK-Elektrolyten befindlichen Metalle Cu und Ni auf oder in die Aluminiumoxidoberflaeche. Die ISOK-Behandlung wurde vom Labormassstab zu einem ISOK-Verfahren im Miniplant-Massstab entwickelt. Der Einfluss der elektrischen Parameter und der chemischen Zusammensetzung der ISOK-Elektrolyte wurde untersucht. Durch eine auf das ISOK-Verfahren abgestimmte Nachbehandlung, ein Tauchverfahren in einer Sol-Gel-Loesung, entsteht ein Schichtsystem mit hoher Solarselektivitaet

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Rachel L. Wilson

2018-03-01

Full Text Available Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes, at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

2011-05-15

Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A thin layer fiber-coupled luminescence dosimeter based on Al2O3:C

DEFF Research Database (Denmark)

Klein, F.A.; Greilich, Steffen; Andersen, Claus Erik

2011-01-01

In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence of the intr......In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence...... of the introduced polymer host matrix on the dosimetric properties was observed. Depth-dose measurements with the new detectors in a 142.66 MeV proton and 270.55 MeV/u carbon ion beam are presented as example applications. We used an RL protocol with saturated crystals allowing for time-effective measurements...... without sensitivity corrections. For protons, a relative luminescence efficiency hHCP of 0.715 0.014 was found in the Bragg peak. For carbon ions, a value of 0.498 0.001 was found in the entrance channel, 0.205 0.015 in the Bragg peak, and a mean of 0.413 0.050 in the tail region. The mean range...

Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

Science.gov (United States)

Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

2015-12-01

This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers. © 2015 Australian Society of Endodontology.

Thin layer fibres are a knotty problem

International Nuclear Information System (INIS)

Anon.

1996-01-01

Concern that emergency core cooling system (ECCS) strainers can be blocked by insulation debris has been generated by an incident at the Swedish Barsebaeck-2 BWR in 1992 and two subsequent incidents at the Perry and Limerick BWR plants in the USA. Recent studies are reported which show that blockage of the small, passive suction type strainers common to these and many other BWRs can occur when only very small quantities of fibrous material present in the suppression pool combine with particulates such as corrosion products to form thin layers on the strainer surface. Layers only a few millimetres thick lead to extremely high head losses on the strainer surface and can cause cavitation in the ECCS pumps. It is concluded that the most practical reliable and cost effective solution is to replace the small strainers with larger ones. (UK)

Pt/Au nanoalloy supported on alumina and chlorided alumina: DFT and experimental analysis

Science.gov (United States)

Sharifi, N.; Falamaki, C.; Ghorbanzadeh Ahangari, M.

2018-04-01

Density functional theory (DFT) was used to explore the adsorption of Pt/Au nanoalloy onto a pure and chlorided γ-Al2O3(110) surface, which has been applied in numerous catalytic reactions. First, we considered the adsorption properties of Pt clusters (n ≤ 5) onto the Al2O3(110) surface to determine the most stable Pt cluster on alumina surface in reforming processes. After full structural relaxations of Pt clusters at various configurations on alumina, our computed results expressed that the minimum binding energy (‑5.67 eV) is accrued for Pt4 cluster and the distance between the nearest Pt atom in the cluster to the alumina surface is equal to 1.13 Å. Then, we investigated the binding energies, geometries, and electronic properties of adsorbed Aun clusters (n ≤ 6) on the γ-Al2O3(110) surface. Our studied showed that Au5 was the most thermodynamically stable structure on γ-Al2O3. Finally, we inspected these properties for adsorbed Au clusters onto the Pt4-decorated alumina (Aun/Pt4-alumina) system. The binding energy of the Au4/Pt4-alumina system was ‑5.01 eV, and the distance between Au4 cluster and Pt4-alumina was 1.33 Å. The Au4/Pt4alumina system was found to be the most stable nanometer-sized catalyst design. At last, our first-principles calculations predicted that the best position of embedment Cl on the Au4/Pt4-alumina.

Challenges and Strategies in the Synthesis of Mesoporous Alumina Powders and Hierarchical Alumina Monoliths

Directory of Open Access Journals (Sweden)

Anne Galarneau

2012-02-01

Full Text Available A new rapid, very simple and one-step sol-gel strategy for the large-scale preparation of highly porous γ-Al2O3 is presented. The resulting mesoporous alumina materials feature high surface areas (400 m2 g−1, large pore volumes (0.8 mL g−1 and the ��-Al2O3 phase is obtained at low temperature (500 °C. The main advantages and drawbacks of different preparations of mesoporous alumina materials exhibiting high specific surface areas and large pore volumes such as surfactant-nanostructured alumina, sol-gel methods and hierarchically macro-/mesoporous alumina monoliths have been analyzed and compared. The most reproducible synthesis of mesoporous alumina are given. Evaporation-Induced Self-Assembly (EISA is the sole method to lead to nanostructured mesoporous alumina by direct templating, but it is a difficult method to scale-up. Alumina featuring macro- and mesoporosity in monolithic shape is a very promising material for in flow applications; an optimized synthesis is described.

Effect of hydrothermal process for inorganic alumina sol on crystal structure of alumina gel

Directory of Open Access Journals (Sweden)

K. Yamamura

2016-09-01

Full Text Available This paper reports the effect of a hydrothermal process for alumina sol on the crystal structure of alumina gel derived from hydrothermally treated alumina sol to help push forward the development of low temperature synthesis of α-Al2O3. White precipitate of aluminum hydroxide was prepared with a homogeneous precipitation method using aluminum nitrate and urea in aqueous solution. The obtained aluminum hydroxide precipitate was peptized by using acetic acid at room temperature, which resulted in the production of a transparent alumina sol. The alumina sol was treated with a hydrothermal process and transformed into an alumina gel film by drying at room temperature. Crystallization of the alumina gel to α-Al2O3 with 900 °C annealing was dominant for a hydrothermal temperature of 100 °C and a hydrothermal time of 60 min, as production of diaspore-like species was promoted with the hydrothermal temperature and time. Excess treatments with hydrothermal processes at higher hydrothermal temperature for longer hydrothermal time prevented the alumina gel from being crystallized to α-Al2O3 because the excess hydrothermal treatments promoted production of boehmite.

Investigation of thin polymer layers for biosensor applications

Energy Technology Data Exchange (ETDEWEB)

Saftics, András; Agócs, Emil [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Fodor, Bálint [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Physics, Faculty of Science, University of Pécs, 7624 Pécs, Ifjúság útja 6 (Hungary); Patkó, Dániel; Petrik, Péter [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary); Kolari, Kai; Aalto, Timo [VTT Technical Research Centre of Finland, PL 1000, Tietotie 3, 02044 Espoo (Finland); Fürjes, Péter [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Horvath, Robert [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary); Kurunczi, Sándor, E-mail: kurunczi.sandor@ttk.mta.hu [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary)

2013-09-15

Novel biosensors made of polymers may offer advantages over conventional technology such as possibility of mass production and tunability of the material properties. With the ongoing work on the polymer photonic chip fabrication in our project, simple model samples were tested parallel for future immobilization and accessing conditions for applications in typical aqueous buffers. The model samples consist of a thin, high refractive index polyimide film on top of TEOS on Si wafer. These model samples were measured by in situ spectroscopic ellipsometry using different aqueous buffers. The experiments revealed a high drift in aqueous solutions; the drift in the ellipsometric parameters (delta, psi) can be evaluated and presented as changes in thickness and refractive index of the polyimide layer. The first molecular layer of immobilization is based on polyethyleneimine (PEI). The signal for the PEI adsorption was detected on a stable baseline, only after a long conditioning. The stability of polyimide films in aqueous buffer solutions should be improved toward the real biosensor application. Preliminary results are shown on the possibilities to protect the polyimide. Optical Waveguide Lightmode Spectroscopy (OWLS) has been used to demonstrate the shielding effect of the thin TiO{sub 2} adlayer in biosensor applications.

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

The thin layer technique and its application to electron microscopy

International Nuclear Information System (INIS)

Ranc, G.

1957-10-01

This work deals with the technique of thin layers obtained by evaporation under vacuum, in the thickness range extending from a few monoatomic layers to several hundred angstroms. The great theoretical and practical interest of these layers has, it is well known, given rise to many investigations from Faraday onwards. Within the necessarily restricted limits of this study, we shall approach the problem more particularly from the point of view of: - their production; - their use in electron microscopy. A critical appraisal is made, in the light of present-day knowledge, based on our personal experience and on an extensive bibliography which we have collected on the subject. (author) [fr

Growth of α-sexithiophene nanostructures on C60 thin film layers

DEFF Research Database (Denmark)

Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

2014-01-01

Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like ...... fluorescence polarimetry measurements the in-plane orientation of the crystalline sites within the needle like structures is determined. The polarimetry investigations strongly indicate that the needle like structures consist of lying molecules....

Determination of ferulic acid and related compounds by thin layer ...

African Journals Online (AJOL)

The analysis of certain phenolic compounds from plants, and their chemical transformation with microorganisms or isolated enzymes, has application in the food and pharmaceutical industry. The rapid quantitative estimation of ferulic acid by thin layer chromatography is described by measurement of the area of the ...

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

Science.gov (United States)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer

International Nuclear Information System (INIS)

Martins, Alessandro F.; Follmann, Heveline D.M.; Rubira, Adley F.; Muniz, Edvani C.

2011-01-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through 1 H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

alumina solid electrolyte

Indian Academy of Sciences (India)

-β/β -alumina ceramics come from two parent phases designated as β-alumina and β ..... Acknowledgements. This work was supported by the Energy Efficiency & ... of Trade, Industry & Energy, Republic of Korea (No. 20142010102460).

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

Energy Technology Data Exchange (ETDEWEB)

Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com [Department of Chemistry, Key Laboratory of Advanced Textile Materials and Manufacturing Technology of the Education Ministry, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

2016-06-21

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

Characterisation by optical spectroscopy of a plasma of depositions of thins layers

International Nuclear Information System (INIS)

Chouan, Yannick

1984-01-01

This research thesis reports a work which, by correlating emission and absorption spectroscopic measurements with properties of deposited thin layers, aimed at being a complement to works undertaken by a team in charge of the realisation of a flat screen. In a first part, the author reports the study of a cathodic pulverisation of a silicon target. He describes the experimental set-up, presents correlations obtained between plasma electric properties (target self-polarisation voltage), emission spectroscopic measurements (line profile and intensity) and absorption spectroscopic measurements (density of metastables), and the composition of deposited thin layers for two reactive pulverisation plasmas (Ar-H_2 and Ar-CH_4). The second part addresses the relationship between experimental conditions and spectroscopic characteristics (emission and absorption lines, excitation and rotation temperature) of a He-SiH_4 plasma. The author also determined the most adapted spectroscopic measurements to the 'control' of deposition, and which result in an optimisation of electronic properties and of the deposition rate for the hydrogenated amorphous silicon. The third part reports the characterisation of depositions. Electric and optic measurements are reported. Then, for both deposition techniques, the author relates the influence of experimental conditions to deposition properties and to spectroscopic diagnosis. The author finally presents static characteristics of a thin-layer-based transistor

Epitaxially influenced boundary layer model for size effect in thin metallic films

International Nuclear Information System (INIS)

Bazant, Zdenek P.; Guo Zaoyang; Espinosa, Horacio D.; Zhu Yong; Peng Bei

2005-01-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films

Epitaxially influenced boundary layer model for size effect in thin metallic films

Science.gov (United States)

Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

2005-04-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

Electron beam dosimetry for a thin-layer absorber irradiated by 300-keV electrons

International Nuclear Information System (INIS)

Kijima, Toshiyuki; Nakase, Yoshiaki

1993-01-01

Depth-dose distributions in thin-layer absorbers were measured for 300-keV electrons from a scanning-type irradiation system, the electrons having penetrated through a Ti-window and an air gap. Irradiations of stacks of cellulose triacetate(CTA) film were carried out using either a conveyor (i.e. dynamic irradiation) or fixed (i.e. static) irradiation. The sample was irradiated using various angles of incidence of electrons, in order to examine the effect of obliqueness of electron incidence at low-energy representative of routine radiation curing of thin polymeric or resin layers. Dynamic irradiation gives broader and shallower depth-dose distributions than static irradiation. Greater obliqueness of incident electrons gives results that can be explained in terms of broader and shallower depth-dose distributions. The back-scattering of incident electrons by a metal(Sn) backing material enhances the absorbed dose in a polymeric layer and changes the overall distribution. It is suggested that any theoretical estimations of the absorbed dose in thin layers irradiated in electron beam curing must be accomplished and supported by experimental data such as that provided by this investigation. (Author)

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

International Nuclear Information System (INIS)

Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

Science.gov (United States)

Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

2015-05-01

Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

Directory of Open Access Journals (Sweden)

Rihui Yao

2017-02-01

Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

Determination of distribution function of refraction index and anion diffusion depth in porous alumina photonic crystals

Directory of Open Access Journals (Sweden)

H. Kaviani

2007-09-01

Full Text Available   Band structure of porous alumina photonic crystal in the Γ X direction was calculated using order-N method . In a comparison of calculated results with experimental data of reflective and absorptive index, the variation of refractive index of alumina in the external region of oxide layer, around the pores were studied. A Gaussian distribution function was adopted for phosphate anions in the external oxide layer and the variation of refractive index and diffusion depth were determined. The structure of the first four bands was calculated using the obtained distribution of refractive index in the external oxide layer for both TE and TM mode. This results show a narrow full band gap in the TM mode.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

Science.gov (United States)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Approximate reflection coefficients for a thin VTI layer

KAUST Repository

Hao, Qi

2017-09-18

We present an approximate method to derive simple expressions for the reflection coefficients of P- and SV-waves for a thin transversely isotropic layer with a vertical symmetry axis (VTI) embedded in a homogeneous VTI background. The layer thickness is assumed to be much smaller than the wavelengths of P- and SV-waves inside. The exact reflection and transmission coefficients are derived by the propagator matrix method. In the case of normal incidence, the exact reflection and transmission coefficients are expressed in terms of the impedances of vertically propagating P- and S-waves. For subcritical incidence, the approximate reflection coefficients are expressed in terms of the contrast in the VTI parameters between the layer and the background. Numerical examples are designed to analyze the reflection coefficients at normal and oblique incidence, and investigate the influence of transverse isotropy on the reflection coefficients. Despite giving numerical errors, the approximate formulae are sufficiently simple to qualitatively analyze the variation of the reflection coefficients with the angle of incidence.

Sensitive Thin-Layer Chromatography Detection of Boronic Acids Using Alizarin

NARCIS (Netherlands)

Duval, F.L.; Beek, van T.A.; Zuilhof, H.

2012-01-01

A new method for the selective and sensitive detection of boronic acids on thin-layer chromatography plates is described. The plate is briefly dipped in an alizarin solution, allowed to dry in ambient air, and observed under 366 nm light. Alizarin emits a bright yellow fluorescence only in the

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Investigation of vanadium and nitride alloys thin layers deposited by PVD

Directory of Open Access Journals (Sweden)

Nouveau C.

2012-06-01

Full Text Available In this work we present the technique of magnetron vapor deposition and the effect of several deposition parameters on the structural and morphological properties of prepared thin films. It was noted that the deposition time has an effect on the crystallinity, mechanical properties such as residual stress, roughness surface and the layer composition from target products. Studies were carried out on layers of vanadium (V and the nitride vanadium (VN.

Preparation and characterization of multilayer mesoporous γ-alumina membrane obtained via sol-gel using new precursors

Directory of Open Access Journals (Sweden)

Tafrishi R.

2015-12-01

Full Text Available In this paper, a mesoporous γ-alumina membrane coated on a macroporous α-alumina support via sol-gel method has been reported. A crack-free γ-alumina membrane was obtained by adding PVA to the alumina solution and optimum parameters of roughness, temperature and porosity were achieved. The support was dip-coated in different solutions using two new different solvents with different particle size distributions. Using these two solvents led to the uniform distribution of pore size in the final membrane. The alumina sols showed particle size distributions in the range of 20 to 55 nm which was measured by a DLS Zeta Sizer. X-ray diffraction technique, atomic force microscopy and scanning electron microscopy were used to characterize the membrane layer. XRD and DTA data for the γ-alumina membrane showed its thermal stability up to around 600 °C. The thickness of the mesoporous γ-alumina membrane was about 4 μm with 16 nm of surface roughness and 5 nm pore size. The resultant crack-free mesoporous membrane shows that the membrane preparation procedure was optimum. In this work, it has been investigated the performance of γ-alumina membranes for single gas permeation and separation of binary gas mixtures.

Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

International Nuclear Information System (INIS)

Nakayama, Hiroyasu; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Saitoh, Eiji; Ye, Jianting; Iwasa, Yoshihiro

2012-01-01

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm -1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

Ultra-thin Al{sub 2}O{sub 3} coating on the acid-treated 0.3Li{sub 2}MnO{sub 3}⋅0.7LiMn{sub 0.60}Ni{sub 0.25}Co{sub 0.15}O{sub 2} electrode for Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Choi, Mansoo [Battery Research Center, Korea Electrotechnology Research Institute, Changwon 642-120 (Korea, Republic of); Dept. of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Ham, Giyul [Dept. of Materials and Science Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jin, Bong-Soo; Lee, Sang-Min [Battery Research Center, Korea Electrotechnology Research Institute, Changwon 642-120 (Korea, Republic of); Lee, Young Moo [Dept. of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Wang, Guoxiu [Centre for Clean Energy Technology, School of Chemistry and Forensic Science, University of Technology, Sydney, NSW 2007 (Australia); Kim, Hyun-Soo, E-mail: hskim@keri.re.kr [Battery Research Center, Korea Electrotechnology Research Institute, Changwon 642-120 (Korea, Republic of)

2014-09-01

Highlights: • 0.3Li{sub 2}MnO{sub 3}⋅0.7LiMn{sub 0.60}Ni{sub 0.25}Co{sub 0.15}O{sub 2} composites were preconditioned by HNO{sub 3}. • The alumina thin film was directly coated on the electrode by an atomic layer deposition. • The acid-treated samples showed significantly higher discharge capacity. • The alumina-coated electrode showed the improved capacity retention ratio. - Abstract: The Li and Mn-rich layered composites represented by Li{sub 2}MnO{sub 3}–LiMO{sub 2} has been attracting great interests owing to its exceptional high capacity (⩾250 mA h g{sup −1}) and enhanced structural stability. In order to improve the initial coulombic efficiency and cyclability of the composites, the material has been activated by an acid-treatment and coated with an Al{sub 2}O{sub 3} using an atomic layer deposition (ALD). The acid-treated electrode showed a higher discharge capacity than the as-prepared electrode. The alumina-coated electrode provided an improved specific capacity of the electrode but also cycling stability, when compared with the bare electrode. The electrode coated with the alumina could lead to a decrease in undesirable reactions, thereby acting as a stable protecting layer that could quickly transport Li{sup +} ions during charge and discharge process.

Successful implementation of the stepwise layer-by-layer growth of MOF thin films on confined surfaces: Mesoporous silica foam as a first case study

KAUST Repository

Shekhah, Osama; Fu, Lei; Sougrat, Rachid; Belmabkhout, Youssef; Cairns, Amy; Giannelis, Emmanuel P.; Eddaoudi, Mohamed

2012-01-01

Here we report the successful growth of highly crystalline homogeneous MOF thin films of HKUST-1 and ZIF-8 on mesoporous silica foam, by employing a layer-by-layer (LBL) method. The ability to control and direct the growth of MOF thin films on confined surfaces, using the stepwise LBL method, paves the way for new prospective applications of such hybrid systems. © 2012 The Royal Society of Chemistry.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Possible artefacts in thin layer chromatography of tritium-labelled hydrocortisone

International Nuclear Information System (INIS)

Sofronie, E.

1982-12-01

Artefacts appearing in thin layer chromatography of tritium labelled hydrocortisone are reported. Evidences are presented that these artefacts cause misleading results concerning radiocheemical purity determiniation. Finally, it is reported a rapid and efficient chromatographic technique allowing the elimination of these artefacts and obtaining of an accurate value for radiochemical purity. (author)

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Effects of surface modification on the critical behaviour in multiple-surface-layer ferroelectric thin films

International Nuclear Information System (INIS)

Lu, Z X

2013-01-01

Using the usual mean-field theory approximation, the critical behaviour (i.e. the Curie temperature T c and the critical surface transverse field Ω sc ) in a multiple-surface-layer ferroelectric thin film is studied on the basis of the spin- 1/2 transverse Ising model. The dependence of the Curie temperature T c on the surface transverse field Ω s and the surface layer number N s are discussed in detail. Meanwhile the dependence of the critical surface transverse field Ω sc on the surface layer number N s is also examined. The numerical results indicate that the critical behaviour of ferroelectric thin films is obviously affected by modifications of the surface transverse field Ω s and surface layer number N s .

Transient Response of Thin Wire above a Layered Half-Space Using TDIE/FDTD Hybrid Method

Directory of Open Access Journals (Sweden)

Bing Wei

2012-01-01

Full Text Available The TDIE/FDTD hybrid method is applied to calculate the transient responses of thin wire above a lossy layered half-space. The time-domain reflection of the layered half space is computed by one-dimensional modified FDTD method. Then, transient response of thin wire induced by two excitation sources (the incident wave and reflected wave is calculated by TDIE method. Finally numerical results are given to illustrate the feasibility and high efficiency of the presented scheme.

Thin-layer scanner with a dot printer recorder for radiolabelled compounds

International Nuclear Information System (INIS)

Kralova, M.; Kysela, F.; Hradil, Z.

1982-01-01

A scanner combined with a matrix printer is described for automatic evaluation of thin-layer radiochromatographs of soft beta emitters such as 3 H, 14 C, and 32 P. Details of the device including block schemes and electrical schemes are given

Bias of shear wave elasticity measurements in thin layer samples and a simple correction strategy.

Science.gov (United States)

Mo, Jianqiang; Xu, Hao; Qiang, Bo; Giambini, Hugo; Kinnick, Randall; An, Kai-Nan; Chen, Shigao; Luo, Zongping

2016-01-01

Shear wave elastography (SWE) is an emerging technique for measuring biological tissue stiffness. However, the application of SWE in thin layer tissues is limited by bias due to the influence of geometry on measured shear wave speed. In this study, we investigated the bias of Young's modulus measured by SWE in thin layer gelatin-agar phantoms, and compared the result with finite element method and Lamb wave model simulation. The result indicated that the Young's modulus measured by SWE decreased continuously when the sample thickness decreased, and this effect was more significant for smaller thickness. We proposed a new empirical formula which can conveniently correct the bias without the need of using complicated mathematical modeling. In summary, we confirmed the nonlinear relation between thickness and Young's modulus measured by SWE in thin layer samples, and offered a simple and practical correction strategy which is convenient for clinicians to use.

Nano-crystalline thin and nano-particulate thick TiO2 layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

International Nuclear Information System (INIS)

Das, P.; Sengupta, D.; Kasinadhuni, U.; Mondal, B.; Mukherjee, K.

2015-01-01

Highlights: • Thin TiO 2 layer is deposited on conducting substrate using sol–gel based dip coating. • TiO 2 nano-particles are synthesized using hydrothermal route. • Thick TiO 2 particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO 2 passivation layer is introduced between the mesoporous TiO 2 nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effect of passivation layer, other two DSSCs are also developed separately using TiO 2 nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO 2 compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO 2 layer in between the mesoporous TiO 2 nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Resistivity scaling due to electron surface scattering in thin metal layers

Science.gov (United States)

Zhou, Tianji; Gall, Daniel

2018-04-01

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

Science.gov (United States)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

Transparent conducting oxide layers for thin film silicon solar cells

NARCIS (Netherlands)

Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

2009-01-01

Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

Low-Dimensional Nanomaterials as Active Layer Components in Thin-Film Photovoltaics

Science.gov (United States)

Shastry, Tejas Attreya

Thin-film photovoltaics offer the promise of cost-effective and scalable solar energy conversion, particularly for applications of semi-transparent solar cells where the poor absorption of commercially-available silicon is inadequate. Applications ranging from roof coatings that capture solar energy to semi-transparent windows that harvest the immense amount of incident sunlight on buildings could be realized with efficient and stable thin-film solar cells. However, the lifetime and efficiency of thin-film solar cells continue to trail their inorganic silicon counterparts. Low-dimensional nanomaterials, such as carbon nanotubes and two-dimensional metal dichalcogenides, have recently been explored as materials in thin-film solar cells due to their exceptional optoelectronic properties, solution-processability, and chemical inertness. Thus far, issues with the processing of these materials has held back their implementation in efficient photovoltaics. This dissertation reports processing advances that enable demonstrations of low-dimensional nanomaterials in thin-film solar cells. These low-dimensional photovoltaics show enhanced photovoltaic efficiency and environmental stability in comparison to previous devices, with a focus on semiconducting single-walled carbon nanotubes as an active layer component. The introduction summarizes recent advances in the processing of carbon nanotubes and their implementation through the thin-film photovoltaic architecture, as well as the use of two-dimensional metal dichalcogenides in photovoltaic applications and potential future directions for all-nanomaterial solar cells. The following chapter reports a study of the interaction between carbon nanotubes and surfactants that enables them to be sorted by electronic type via density gradient ultracentrifugation. These insights are utilized to construct of a broad distribution of carbon nanotubes that absorb throughout the solar spectrum. This polychiral distribution is then shown

Germania and Alumina Dopant Diffusion and Viscous Flow Effects at Preparation of Doped Optical Fibers

Directory of Open Access Journals (Sweden)

Jens Kobelke

2017-01-01

Full Text Available We report on germania and alumina dopant profile shift effects at preparation of compact optical fibers using packaging methods (Stack-and-Draw method, Rod-in-Tube (RiT technique. The sintering of package hollow volume by viscous flow results in a shift of the core-pitch ratio in all-solid microstructured fibers. The ratio is increased by about 5% in the case of a hexagonal package. The shift by diffusion effects of both dopants is simulated for typical slow speed drawing parameters. Thermodynamic approximations of surface dissociation of germania doped silica suggest the need of an adequate undoped silica barrier layer to prevent an undesired bubble formation at fiber drawing. In contrast, alumina doping does not estimate critical dissociation effects with vaporous aluminium oxide components. We report guide values of diffusion length of germania and alumina for the drawing process by kinetic approximation. The germania diffusion involves a small core enlargement, typically in the sub-micrometer scale. Though, the alumina diffusion enlarges it by a few micrometers. A drawn pure alumina preform core rod transforms to an amorphous aluminosilicate core with a molar alumina concentration of only about 50% and a non-gaussian concentration profile.

Terahertz acoustic phonon detection from a compact surface layer of spherical nanoparticles powder mixture of aluminum, alumina and multi-walled carbon nanotube

Science.gov (United States)

Abouelsayed, A.; Ebrahim, M. R.; El hotaby, W.; Hassan, S. A.; Al-Ashkar, Emad

2017-10-01

We present terahertz spectroscopy study on spherical nanoparticles powder mixture of aluminum, alumina, and MWCNTs induced by surface mechanical attrition treatment (SMAT) of aluminum substrates. Surface alloying of AL, Al2O3 0.95% and MWCNTs 0.05% powder mixture was produced during SMAT process, where a compact surface layer of about 200 μm due to ball bombardment was produced from the mixture. Al2O3 alumina powder played a significant role in MWCNTs distribution on surface, those were held in deformation surface cites of micro-cavities due to SMAT process of Al. The benefits are the effects on resulted optical properties of the surface studied at the terahertz frequency range due to electrical isolation confinement effects and electronic resonance disturbances exerted on Al electronic resonance at the same range of frequencies. THz acoustic phonon around 0.53-0.6 THz (17-20 cm-1) were observed at ambient conditions for the spherical nanoparticles powder mixture of Al, Al2O3 and MWCNTs. These results suggested that the presence of Al2O3 and MWCNTs during SMAT process leads to the optically detection of such acoustic phonon in the THz frequency range.

Copper(II) Schiff base complexes and their mixed thin layers with ...

Indian Academy of Sciences (India)

Thin layer; ZnO nanoparticles; copper complexes; AFM; SEM; fluorescence. 1. Introduction ... ZnO nanopowders29,30 and ZnO nanoparticles doped by different metal ...... Roy S, Choubey S, Bhar K, Khan S, Mitra P and Ghosh. B K 2013 J. Mol ...

Organo-layered double hydroxides composite thin films deposited by laser techniques

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

2016-06-30

Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

Effects of current density and electrolyte temperature on the volume expansion factor of anodic alumina formed in oxalic acid

International Nuclear Information System (INIS)

Zhou, F.; Baron-Wiecheć, A.; Garcia-Vergara, S.J.; Curioni, M.; Habazaki, H.; Skeldon, P.; Thompson, G.E.

2012-01-01

The formation of porous anodic alumina in 0.4 M oxalic acid is investigated over a range of current density and electrolyte temperature using sputtering-deposited substrates containing tungsten tracer layers. The findings reveal volume expansion factors and efficiencies of film growth that increase with the increase of the current density and decrease of the temperature. Pore generation by the flow of the anodic alumina in the barrier layer toward the pore walls is proposed to dominate at relatively high current densities (above ∼2 mA cm −2 ), with tungsten tracer species being retained within films. Conversely, losses of tungsten species occur at lower current densities, possibly due to increased field-assisted ejection of Al 3+ ions and/or field-assisted dissolution of the anodic alumina.

Thin-layer chromatography and colorimetric analysis of multi-component explosive mixtures

Science.gov (United States)

Pagoria, Philip F.; Mitchell, Alexander R.; Whipple, Richard E.; Carman, M. Leslie

2014-08-26

A thin-layer chromatography method for detection and identification of common military and peroxide explosives in samples includes the steps of provide a reverse-phase thin-layer chromatography plate; prepare the plate by marking spots on which to deposit the samples by touching the plate with a marker; spot one micro liter of a first standard onto one of the spots, spot one micro liter of a second standard onto another of the spots, and spot samples onto other of spots producing a spotted plate; add eluent to a developing chamber; add the spotted plate to the developing chamber; remove the spotted plate from the developing chamber producing a developed plate; place the developed plate in an ultraviolet light box; add a visualization agent to a dip tank; dip the developed plate in the dip tank and remove the developed plate quickly; and detect explosives by viewing said developed plate.

Determination of the thickness of chemically removed thin layers on GaAs VPE structures

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K.; Nemeth-Sallay, M.; Nemcsics, A. (Research Inst. for Technical Physics, Hungarian Academy of Sciences, Budapest (Hungary))

1991-01-01

Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device preparation processes, though the possible thinning of the active layer is small. Therefore a method allowing determination of thicknesses as small as at about 20 nm of the layer removed by chemical etching from GaAs VPE structures was applied. Using special multilayered structures and a continuous electrochemical carrier concentration depth profiling, the influence of the layer thickness inhomogeneity and of some measurement errors can be minimized. Some frequently used etchants and the influence of different - so called - non-etching processes were compared in different combinations. It was shown that besides the direct etching a change of the surface conditions occurs, which influences the etch rate in the succeeding etching procedure. (orig.).

Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

International Nuclear Information System (INIS)

Sochinskii, N.V.; Abellan, M.; Martin Gonzalez, M.; Saucedo, E.; Dieguez, E.; Briones, F.

2006-01-01

The vapour phase growth (VPG) of CdTe and Cd 1- x Zn x Te was performed in order to investigate the formation of Cd(Zn)Te columnar nanostructures, which could serve as a basis for micropixels usable for further development of X- and gamma-ray high-resolution imaging devices. The possibility to form the 'Cd(Zn)Te-in-porous alumina' nanostructures by VPG has been demonstrated. The Cd(Zn)Te crystals integrated into nanoporous alumina have shown to have photoluminescence properties compatible with those of the bulk crystals and planar epitaxial layers. Further investigations are going on to improve the structural quality of Cd(Zn)Te nanocrystals

Modeling of thin layer drying of tarragon (Artemisia dracunculus L.)

NARCIS (Netherlands)

ArabHosseini, A.; Huisman, W.; Boxtel, van A.J.B.; Mueller, J.

2009-01-01

The drying behavior of tarragon leaves as well as chopped plants were evaluated at air temperatures ranging from 40 to 90 °C, at various air relative humidities and a constant air velocity of 0.6 m/s. The experimental data was fitted to a number of thin layer drying equations. The equations were

Automatic identification of single- and/or few-layer thin-film material

DEFF Research Database (Denmark)

2014-01-01

One or more digital representations of single- (101) and/or few-layer (102) thin- film material are automatically identified robustly and reliably in a digital image (100), the digital image (100) having a predetermined number of colour components, by - determining (304) a background colour...... component of the digital image (100) for each colour component, and - determining or estimating (306) a colour component of thin-film material to be identified in the digital image (100) for each colour component by obtaining a pre-determined contrast value (C R; C G; C B) for each colour component...

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

Mesoscopic layered structure in conducting polymer thin film fabricated by potential-programmed electropolymerization

Energy Technology Data Exchange (ETDEWEB)

Fujitsuka, Mamoru (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Nakahara, Reiko (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Iyoda, Tomokazu (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Shimidzu, Takeo (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Tomita, Shigehisa (Toray Research Center Co., Ltd., Shiga (Japan)); Hatano, Yayoi (Toray Research Center Co., Ltd., Shiga (Japan)); Soeda, Fusami (Toray Research Center Co., Ltd., Shiga (Japan)); Ishitani, Akira (Toray Research Center Co., Ltd., Shiga (Japan)); Tsuchiya, Hajime (Nitto Technical Information Center Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan)); Ohtani, Akira (Central Research Lab., Nitto Denko Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan))

1992-11-01

Mesoscopic layered structures in conducting polymer thin films are fabricated by the potential-programmed electropolymerization method. High lateral quality in the layered structure is realized by the improvement of polymerization conditions, i.e., a mixture of pyrrole and bithiophene as monomers, a silicon single-crystal wafer as a working electrode and propylene carbonate as a solvent. SIMS depth profiling of the resulting layered films indicates a significant linear correlation between the electric charge passed and the thickness of the individual layers on a 100 A scale. (orig.)

Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

National Research Council Canada - National Science Library

George, Steven

1997-01-01

Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

Continuum-Scale Modeling of Liquid Redistribution in a Stack of Thin Hydrophilic Fibrous Layers

NARCIS (Netherlands)

Tavangarrad, A.H.; Mohebbi, Behzad; Hassanizadeh, S.M.|info:eu-repo/dai/nl/074974424; Rosati, Rodrigo; Claussen, Jan; Blümich, Bernhard

Macroscale three-dimensional modeling of fluid flow in a thin porous layer under unsaturated conditions is a challenging task. One major issue is that such layers do not satisfy the representative elementary volume length-scale requirement. Recently, a new approach, called reduced continua model

Effect of surfactant Te on the behavior of alumina inclusions at advancing solid-liquid interfaces of liquid steel

International Nuclear Information System (INIS)

Zheng, Lichun; Malfliet, Annelies; Wollants, Patrick; Blanpain, Bart; Guo, Muxing

2016-01-01

The effect of surfactant Te on the behavior of alumina inclusions at advancing solid-liquid interfaces of liquid steel was studied by adding Te to liquid steel before Al deoxidation at 1873 K. After water-quenching, the spatial distribution homogeneity of alumina inclusions in the steel matrix was characterized using the Dirichlet tessellation method. The deterioration of this homogeneity with increasing the addition of Te indicates that Te facilitates pushing of alumina inclusions. This phenomenon was discussed based on the thermodynamics of an asymmetric thin liquid film confined by an advancing solid-liquid interface and a particle. The surface excesses of Te at the solid-liquid and particle-liquid interfaces were theoretically demonstrated to decrease when an alumina inclusion moves towards the solid-liquid interface, thereby weakening the effect of Te on the solid-liquid and particle-liquid interfacial energies. Based on this, effect of surfactants was incorporated in the models predicting the critical velocity V_C.

Light scattering of thin azobenzene side-chain polyester layers

DEFF Research Database (Denmark)

Kerekes, Á.; Lörincz, E.; Ramanujam, P.S.

2002-01-01

Light scattering properties of liquid crystalline and amorphous azobenzene side-chain polyester layers used for optical data storage were examined by means of transmissive scatterometry. Comparative experiments show that the amorphous polyester has significantly lower light scattering...... characteristics than the liquid crystalline polyester. The amorphous samples have negligible polarization part orthogonal to the incident beam. the liquid crystalline samples have relative high orthogonal polarization part in light scattering, The light scattering results can be used to give a lower limit...... for the domain size in thin liquid crystalline polyester layers being responsible for the dominant light scattering. The characteristic domain Sizes obtained from the Fourier transformation of polarization microscopic Pictures confirm these values....

Targets with thin ferromagnetic layers for transient field experiments

International Nuclear Information System (INIS)

Gallant, J.L.; Dmytrenko, P.

1982-01-01

Multilayer targets containing a central layer sufficiently thin so that all recoil nuclei can traverse it and subsequently stop in a suitable cubic environment have been prepared. Such targets are required in experiments making use of a magnetic field acting on an ion moving through a ferromagnetic material. The preparation and annealing of the ferromagnetic foils (iron and gadolinium) and the fabrication of the multilayer targets are described. (orig.)

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

2017-01-01

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

Oxidation of mullite-zirconia-alumina-silicon carbide composites

International Nuclear Information System (INIS)

Baudin, C.; Moya, J.S.

1990-01-01

This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

On-line and precise measurement of iron wear using thin layer activation reactions by proton beam

International Nuclear Information System (INIS)

Kosako, Toshiso; Nishimura, Kazuo.

1990-01-01

For the purpose of the on-line measurement of iron wear, thin layer activation (TLA) method or surface layer activation (SLA) method has been carried out since early 1970s. This method uses the irradiation of charged particle beam like protons from an accelerator onto a metal surface to produce a thin activated layer of several tens μm. The wear of this activated layer is measured by nondestructive on-line method with a radiation detector. There are two methods of the measurement. One is the activity loss measurement on the surface, and the other is the activity measurement of the metal debris collected in a filter. The former method is considered here. The purpose it to measure the wear of engine cam noses to help the development of good engine oil. Proton beam irradiation with a tandem van de Graaff accelerator, wear calibration using a gamma ray spectrometer, on-line wear measurement of cam noses of car engines by TLA method and so on are reported. The 7.00 MeV proton beam from a van de Graaff accelerator was used for activation, and Co-56, Co-57 and Co-58 were obtained in thin layers. (K.I.)

Enhancement of absorption in vertically-oriented graphene sheets growing on a thin copper layer

Energy Technology Data Exchange (ETDEWEB)

Rozouvan, Tamara; Poperenko, Leonid [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine); Kravets, Vasyl, E-mail: vasyl_kravets@yahoo.com [School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Shaykevich, Igor [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine)

2017-02-28

Highlights: • The optical properties and surface structure of graphene films. • Chemical vapour deposition method. • Scanning tunneling microscopy revealed vertical crystal lattice structure of graphene layer. • We report a significant enhancement of the absorption band in the vertically-oriented graphene sheets. - Abstract: The optical properties and surface structure of graphene films grown on thin copper Cu (1 μm) layer using chemical vapour deposition method were investigated via spectroscopic ellipsometry and nanoscopic measurements. Angle variable ellipsometry measurements were performed to analyze the features of dispersion of the complex refractive index and optical conductivity. It was observed significant enhancement of the absorption band in the vertically-oriented graphene sheets layer with respect to the bulk graphite due to interaction between excited localized surface plasmon at surface of thin Cu layer and graphene’s electrons. Scanning tunneling microscopy measurements with atomic spatial resolution revealed vertical crystal lattice structure of the deposited graphene layer. The obtained results provide direct evidence of the strong influence of the growing condition and morphology of nanostructure on electronic and optical behaviours of graphene film.

On elastic waves in an thinly-layered laminated medium with stress couples under initial stress

Directory of Open Access Journals (Sweden)

P. Pal Roy

1988-01-01

Full Text Available The present work is concerned with a simple transformation rule in finding out the composite elastic coefficients of a thinly layered laminated medium whose bulk properties are strongly anisotropic with a microelastic bending rigidity. These elastic coefficients which were not known completely for a layered laminated structure, are obtained suitably in terms of initial stress components and Lame's constants λi, μi of initially isotropic solids. The explicit solutions of the dynamical equations for a prestressed thinly layered laminated medium under horizontal compression in a gravity field are derived. The results are discussed specifying the effects of hydrostatic, deviatoric and couple stresses upon the characteristic propagation velocities of shear and compression wave modes.

Normal and Reversed-Phase Thin Layer Chromatography of Green Leaf Extracts

Science.gov (United States)

Sjursnes, Birte Johanne; Kvittingen, Lise; Schmid, Rudolf

2015-01-01

Introductory experiments of chromatography are often conducted by separating colored samples, such as inks, dyes, and plant extracts, using filter paper, chalk, or thin layer chromatography (TLC) plates with various solvent systems. Many simple experiments have been reported. The relationship between normal chromatography and reversed-phase…

Homogenization and dimension reduction of filtration combustion in heterogeneous thin layers

NARCIS (Netherlands)

Fatima, T.; Ijioma, E.R.; Ogawa, T.; Muntean, A.

2014-01-01

We study the homogenization of a reaction-diffusion-convection system posed in an e-periodic d-thin layer made of a two-component (solid-air) composite material. The microscopic system includes heat flow, diffusion and convection coupled with a nonlinear surface chemical reaction. We treat two

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Measurement of the oxygen binding properties of haemocyanin with the aid of a thin-layer optical cell

Directory of Open Access Journals (Sweden)

W. J. van Aardt

1992-07-01

Full Text Available The merits of the thin-layer method of Dolman and Gill to study the oxygen binding of haemocyanin were experimentally tested with haemocyanin obtained from arthropods and molluscs. The results show that, spectrophotometrically, oxyhaemocyanin from both arthropods and molluscs has a prominent absorption peak between 335 and 345 nm. Haemocyanin is more stable in the thin- layer preparation when compared with haemoglobin. At 35 °C a decrease in the initial absorbance value of less than 2% was found after three hours. For haemoglobin the initial value decreases nearly 10% during the same period. For a high-affinity haemocyanin such as Marisa cornuarietis (P⁵⁰ = 1,07 mmHg the thin-layer method of Dolman and Gill (1978 shows better PO₂ resolution than other methods. The reason for this is that the dilution valve, which is absent in other thin-layer methods, intrinsically measures the resultant PO₂ values at very low tensions more accurately. In this study a step-by-step explanation of the technique is given. The calculations have been explained using real figures and examples. It is hoped that this detailed description will make this technique more readily available for use by respiratory physiologists.

Temperature dependence of magnetically dead layers in ferromagnetic thin-films

Directory of Open Access Journals (Sweden)

M. Tokaç

2017-11-01

Full Text Available Polarized neutron reflectometry has been used to study interface magnetism and magnetic dead layers in model amorphous CoFeB:Ta alloy thin-film multilayers with Curie temperatures tuned to be below room-temperature. This allows temperature dependent variations in the effective magnetic thickness of the film to be determined at temperatures that are a significant fraction of the Curie temperature, which cannot be achieved in the material systems used for spintronic devices. In addition to variation in the effective magnetic thickness due to compositional grading at the interface with the tantalum capping layer, the key finding is that at the interface between ferromagnetic film and GaAs(001 substrate local interfacial alloying creates an additional magnetic dead-layer. The thickness of this magnetic dead-layer is temperature dependent, which may have significant implications for elevated-temperature operation of hybrid ferromagnetic metal-semiconductor spintronic devices.

Shockless spalling damage of alumina ceramic

Science.gov (United States)

Erzar, B.; Buzaud, E.

2012-05-01

Ceramic materials are commonly used to build multi-layer armour. However reliable test data is needed to identify correctly models and to be able to perform accurate numerical simulation of the dynamic response of armour systems. In this work, isentropic loading waves have been applied to alumina samples to induce spalling damage. The technique employed allows assessing carefully the strain-rate at failure and the dynamic strength. Moreover, specimens have been recovered and analysed using SEM. In a damaged but unbroken specimen, interactions between cracks has been highlighted illustrating the fragmentation process.

Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

Directory of Open Access Journals (Sweden)

Daria Majchrowicz

2016-03-01

Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics

International Nuclear Information System (INIS)

Kim, Namsu; Graham, Samuel

2013-01-01

A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate. The film's effective water vapor transmission rate was 2.4 ± 1.5 × 10 −5 g/m 2 /day at 20 °C and 50% relative humidity. Flexural tests revealed that for films deposited on the polyethylene terephthalate substrate, the barrier layer failed due to cracking at a curvature radius of 6.4 mm, corresponding to a strain of 0.8%. Adding an epoxy top coat of suitable thickness shifted the neutral axis toward the encapsulation layer, reducing the induced strain. Barrier performance was maintained under the 6.4 mm radius of curvature in this encapsulation structure. Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer. - Highlights: • High performance barrier is fabricated on flexible substrate. • The water vapor transmission rate is 2.4 ± 1.5 × 10 −5 g/m 2 /day. • The structure maintains its performance under a small radius of bending curvature

Visible light dynamical diffraction in a 1-D photonic crystal-based interferometer with an extremely thin spacer layer

International Nuclear Information System (INIS)

Prudnikov, I.R.

2016-01-01

Properties of light diffraction in a Fabry–Pérot-like interferometer composed of two 1-D photonic crystals and a nanometer-thick spacer layer are analytically investigated. It is shown that the resonant enhancement of light wave intensity in such a layer is possible because of light dynamical diffraction from the photonic crystals of the interferometer. Numerical simulations of (i) light reflectivity and transmittance curves of the interferometer having an ultra-thin spacer layer (its thickness changes from less than 1 nm to about 10 nm) and (ii) the resonant distribution of the light wave intensity in the vicinity of the layer are performed. Based on the numerical simulations, potentialities for the determination of the structural parameters (e.g., thicknesses and refraction indexes) of ultra-thin spacer films are discussed. A difference is found to appear in resonant intensity enhancements inside the ultra-thin spacer layers between s- and p-polarized light waves.

Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Khorasani, Arash Elhami [ON Semiconductor Corp., Phoenix, Arizona 85005 (United States); Theodore, N. D. [CHD-Fab, Freescale Semiconductor Inc., Tempe, Arizona 85224 (United States); Dhar, A. [Intel Corp., 2501 NW 229th Ave, Hillsboro, Oregon 97124 (United States)

2015-11-28

Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

International Nuclear Information System (INIS)

Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Turner, Kevin T; Bargatin, Igor; Shaygan, Mehrdad

2016-01-01

We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al_2O_3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. (paper)

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

Energy Technology Data Exchange (ETDEWEB)

Das, P.; Sengupta, D. [Centre for Advanced Materials Processing, CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 West Bengal (India); CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research (AcSIR), Durgapur, 713209 West Bengal (India); Kasinadhuni, U. [Department of Engineering Physics, Bengal College of Engineering and Technology, Durgapur, West Bengal (India); Mondal, B. [Centre for Advanced Materials Processing, CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 West Bengal (India); Mukherjee, K., E-mail: kalisadhanm@yahoo.com [Centre for Advanced Materials Processing, CSIR-Central Mechanical Engineering Research Institute, Durgapur, 713209 West Bengal (India)

2015-06-15

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effect of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.

Sol-gel synthesized of nanocomposite palladium-alumina ceramic membrane for H{sub 2} permeability: Preparation and characterization

Energy Technology Data Exchange (ETDEWEB)

Ahmad, A.L.; Mustafa, N.N.N. [School of Chemical Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Penang (Malaysia)

2007-08-15

Palladium-alumina membrane with mesopore and narrow pore size distribution was prepared by the sol-gel method. Effect of the finely dispersed metal on the microstructure and the characteristic properties of the palladium-alumina membrane were investigated. Observations were made on membrane weight loss, morphology, pore structure, pore size, surface area, pore surface fractal and membrane's crystal structure. Autosorb analysis, X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Fourier Transform Infrared (FTIR) analysis were employed in the membrane characterization. Autosorb analysis found that, BET surface area decreased and pore size of the membrane increased with the increasing of calcinations temperature (500-1100{sup o}C) and with the increasing of palladium amount in the membrane. FTIR and TG/DTA analysis show that the suitable temperature for calcinations of palladium-alumina membrane is at 700{sup o}C. Palladium metals are highly dispersed at calcinations temperature of 700{sup o}C as observed by TEM analysis. The fine crystallinity of the palladium and {gamma}-alumina phase was obtained after calcined at 700{sup o}C. The SEM morphology shows a smooth and free crack layer of palladium-alumina membrane after repeating the process of dipping, drying and calcinations at temperature of 700{sup o}C. The membrane also successfully coated with a good adhesion on support. The thickness of the final membrane layer was estimated as 9{mu} m. (author)

Surface characterisation and photocatalytic performance of N-doped TiO{sub 2} thin films deposited onto 200 nm pore size alumina membranes by sol–gel methods

Energy Technology Data Exchange (ETDEWEB)

Grilli, R., E-mail: r.grilli@surrey.ac.uk [The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH (United Kingdom); Di Camillo, D.; Lozzi, L. [Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell' Aquila, Via Vetoio, 67010 Coppito, L' Aquila (Italy); Horovitz, I.; Mamane, H.; Avisar, D. [School of Mechanical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Baker, M.A. [The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH (United Kingdom)

2015-06-01

Membrane filtration is employed for water treatment and wastewater reclamation purposes, but membranes alone are unable to remove pollutant molecules and certain pathogens. Photocatalytically active N-doped TiO{sub 2} coatings have been deposited by sol–gel onto 200 nm pore size alumina membranes for water treatment applications using two different methods, via pipette droplets or spiral bar applicator. The uncoated and coated membranes were characterised by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive X-ray spectrometry (EDX). Both coatings showed the presence of N-doped anatase, with a surface coverage between 84 and 92%, and nitrogen concentration (predominantly interstitial) of 0.9 at.%. The spiral bar applicator deposited coatings exhibit a thicker mud-cracked surface layer with limited penetration of the porous membrane, whilst the pipette deposited coatings have mostly penetrated into the bulk of the membrane and a thinner layer is present at the surface. The photocatalytic activity (PCA), measured through the degradation of carbamazepine (CBZ), under irradiation of a solar simulator was 58.6% for the pipette coating and 63.3% for the spiral bar coating. These photocatalytically active N-doped sol–gel coated membranes offer strong potential in forming the fundamental basis of a sunlight based water treatment system. - Highlights: • Sol gel N-doped TiO{sub 2} thin films were deposited on 200 nm pore size Al{sub 2}O{sub 3} membranes. • Two sol–gel methods have been compared – pipette drop and spiral bar deposition. • The coatings showed a similar microstructure and composition but different morphology. • The PCA (degradation of carbamazepine) was ∼60% for both sol–gel coatings. • The coated membranes are promising for use in a membrane based water treatment system.

Superhydrophobic Thin Films Fabricated by Reactive Layer-by-Layer Assembly of Azlactone-Functionalized Polymers.

Science.gov (United States)

Buck, Maren E; Schwartz, Sarina C; Lynn, David M

2010-09-11

We report an approach to the fabrication of superhydrophobic thin films that is based on the 'reactive' layer-by-layer assembly of azlactone-containing polymer multilayers. We demonstrate that films fabricated from alternating layers of the azlactone functionalized polymer poly(2-vinyl-4,4-dimethylazlactone) (PVDMA) and poly(ethyleneimine) (PEI) exhibit micro- and nanoscale surface features that result in water contact angles in excess of 150º. Our results reveal that the formation of these surface features is (i) dependent upon film thickness (i.e., the number of layers of PEI and PVDMA deposited) and (ii) that it is influenced strongly by the presence (or absence) of cyclic azlactone-functionalized oligomers that can form upon storage of the 2-vinyl-4,4-dimethylazlactone (VDMA) used to synthesize PVDMA. For example, films fabricated using polymers synthesized in the presence of these oligomers exhibited rough, textured surfaces and superhydrophobic behavior (i.e., advancing contact angles in excess of 150º). In contrast, films fabricated from PVDMA polymerized in the absence of this oligomer (e.g., using freshly distilled monomer) were smooth and only moderately hydrophobic (i.e., advancing contact angles of ~75º). The addition of authentic, independently synthesized oligomer to samples of distilled VDMA at specified and controlled concentrations permitted reproducible fabrication of superhydrophobic thin films on the surfaces of a variety of different substrates. The surfaces of these films were demonstrated to be superhydrophobic immediately after fabrication, but they became hydrophilic after exposure to water for six days. Additional experiments demonstrated that it was possible to stabilize and prolong the superhydrophobic properties of these films (e.g., advancing contact angles in excess of 150° even after complete submersion in water for at least six weeks) by exploiting the reactivity of residual azlactones to functionalize the surfaces of the films

Diffusion of Cr, Fe, and Ti ions from Ni-base alloy Inconel-718 into a transition alumina coating

Energy Technology Data Exchange (ETDEWEB)

Dressler, M., E-mail: martin.dressler@bam.de; Nofz, M.; Doerfel, I.; Saliwan-Neumann, R.

2012-04-30

Heat treating metals at high temperatures trigger diffusion processes which may lead to the formation of oxide layers. In this work the diffusion of Cr, Fe and Ti into an alumina coating applied to Inconel-718 is being investigated. Mass gain measurements, UV-vis spectroscopy and transmission electron microscopy were applied in order to study the evolution of the diffusion process. It was found that mainly Cr as well as minor amounts of Fe and Ti are being incorporated into the alumina coating upon prolonged heat treatment at 700 Degree-Sign C. It could be shown that alumina coatings being void of Cr have the same oxidation related mass gain as uncoated samples. However, incorporation of Cr into the alumina coating decreased their mass gain below that of uncoated substrates forming a Cr oxide scale only. - Highlights: Black-Right-Pointing-Pointer We investigated the diffusion of Cr into alumina coatings applied on IN-718. Black-Right-Pointing-Pointer The ingress of Cr led to the formation of mixed alumina/chromium coatings. Black-Right-Pointing-Pointer The mass gain of mixed alumina/chromium coatings was compared to uncoated IN-718. Black-Right-Pointing-Pointer The mixed alumina/chromium coatings improved the oxidation resistance of IN-718.

Magnetic properties of Cobalt thin films deposited on soft organic layers

Energy Technology Data Exchange (ETDEWEB)

Bergenti, I. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy)]. E-mail: i.bergenti@bo.ismn.cnr.it; Riminucci, A. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Arisi, E. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Murgia, M. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Cavallini, M. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy); Solzi, M. [Dipartimento di Fisica dell' Universita di Parma and CNISM, Parco Area delle Scienze 7/A, Parma 43100 (Italy); Casoli, F. [IMEM-CNR Parco Area delle Scienze 37/A, Parma 43100 (Italy); Dediu, V. [ISMN-CNR via P. Gobetti 101, Bologna 40129 (Italy)

2007-09-15

Magnetic and morphological properties of Cobalt thin films grown by RF sputtering on organic Alq3 layers were investigated by magneto-optical Kerr effect (MOKE) technique and atomic force microscopy (AFM). The AFM images indicate a template growth of Co layers on top of Alq3, the magnetic film 'decorates' the surface of organic material. This peculiar morphology induces a strong uniaxial magnetic anisotropy in the Co films, as detected by MOKE measurements. Results are important for the operation of a new class of devices-vertical organic spin valves.

Reversed-phase thin-layer chromatography of the rare earth elements

International Nuclear Information System (INIS)

Kuroda, R.; Adachi, M.; Oguma, K.

1988-01-01

Partition chromatographic behaviour of the rare earth elements on C 18 bonded silica reversed-phase material has been investigated by thin-layer chromatography in methanol - lactate media. The rare earth lactato complexes are distributed and fractionated on bonded silica layers without ion-interaction reagents. The concentration and pH of lactate solution, methanol concentration and temperature have effects on the migration and resolution of the rare earth elements. The partition system is particularly suited to separate adjacent rare earths of middle atomic weight groups, allowing the separation of gadolinium, terbium, dysprosium, holmium, erbium and thulium to be achieved by development to 18 cm distance. (orig.)

Scalable synthesis of palladium nanoparticle catalysts by atomic layer deposition

International Nuclear Information System (INIS)

Liang Xinhua; Lyon, Lauren B.; Jiang Yingbing; Weimer, Alan W.

2012-01-01

Atomic layer deposition (ALD) was used to produce Pd/Al 2 O 3 catalysts using sequential exposures of Pd(II) hexafluoroacetylacetonate and formalin at 200 °C in a fluidized bed reactor. The ALD-prepared Pd/alumina catalysts were characterized by various methods including hydrogen chemisorption, XPS, and TEM, and compared with a commercially available 1 wt% Pd/alumina catalyst, which was also characterized. The content of Pd on alumina support and the size of Pd nanoparticles can be controlled by the number of ALD-coating cycles and the dose time of the Pd precursor. One layer of organic component from the Pd precursor remained on the Pd particle surface. The ALD 0.9 wt% Pd/alumina had greater active metal surface area and percent metal dispersion than the commercial 1 wt% Pd/alumina catalyst. The ALD and commercial catalysts were subjected to catalytic testing to determine their relative activities for glucose oxidation to gluconic acid in aqueous solution. The ALD 0.9 wt% Pd/alumina catalyst had comparable activity as compared to the commercial 1 wt% Pd catalyst. No noticeable amount of Pd leaching was observed for the ALD-prepared catalysts during the vigorously stirred reaction.

Bauxite Mining and Alumina Refining

Science.gov (United States)

Frisch, Neale; Olney, David

2014-01-01

Objective: To describe bauxite mining and alumina refining processes and to outline the relevant physical, chemical, biological, ergonomic, and psychosocial health risks. Methods: Review article. Results: The most important risks relate to noise, ergonomics, trauma, and caustic soda splashes of the skin/eyes. Other risks of note relate to fatigue, heat, and solar ultraviolet and for some operations tropical diseases, venomous/dangerous animals, and remote locations. Exposures to bauxite dust, alumina dust, and caustic mist in contemporary best-practice bauxite mining and alumina refining operations have not been demonstrated to be associated with clinically significant decrements in lung function. Exposures to bauxite dust and alumina dust at such operations are also not associated with the incidence of cancer. Conclusions: A range of occupational health risks in bauxite mining and alumina refining require the maintenance of effective control measures. PMID:24806720

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

International Nuclear Information System (INIS)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

2015-01-01

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO 2 layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10 −2  A W −1 and a shot-derived specific detectivity of 3 × 10 9  Jones at 1530 nm wavelength

Titanium dioxide thin films by atomic layer deposition: a review

Science.gov (United States)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Performance of a Polymer Flood with Shear-Thinning Fluid in Heterogeneous Layered Systems with Crossflow

Directory of Open Access Journals (Sweden)

Kun Sang Lee

2011-08-01

Full Text Available Assessment of the potential of a polymer flood for mobility control requires an accurate model on the viscosities of displacement fluids involved in the process. Because most polymers used in EOR exhibit shear-thinning behavior, the effective viscosity of a polymer solution is a highly nonlinear function of shear rate. A reservoir simulator including the model for the shear-rate dependence of viscosity was used to investigate shear-thinning effects of polymer solution on the performance of the layered reservoir in a five-spot pattern operating under polymer flood followed by waterflood. The model can be used as a quantitative tool to evaluate the comparative studies of different polymer flooding scenarios with respect to shear-rate dependence of fluids’ viscosities. Results of cumulative oil recovery and water-oil ratio are presented for parameters of shear-rate dependencies, permeability heterogeneity, and crossflow. The results of this work have proven the importance of taking non-Newtonian behavior of polymer solution into account for the successful evaluation of polymer flood processes. Horizontal and vertical permeabilities of each layer are shown to impact the predicted performance substantially. In reservoirs with a severe permeability contrast between horizontal layers, decrease in oil recovery and sudden increase in WOR are obtained by the low sweep efficiency and early water breakthrough through highly permeable layer, especially for shear-thinning fluids. An increase in the degree of crossflow resulting from sufficient vertical permeability is responsible for the enhanced sweep of the low permeability layers, which results in increased oil recovery. It was observed that a thinning fluid coefficient would increase injectivity significantly from simulations with various injection rates. A thorough understanding of polymer rheology in the reservoir and accurate numerical modeling are of fundamental importance for the exact estimation

[Thin layer agar represents a cost-effective alternative for the rapid diagnosis of multi-drug resistant tuberculosis].

Science.gov (United States)

Hernández-Sarmiento, José M; Martínez-Negrete, Milton A; Castrillón-Velilla, Diana M; Mejía-Espinosa, Sergio A; Mejía-Mesa, Gloria I; Zapata-Fernández, Elsa M; Rojas-Jiménez, Sara; Marín-Castro, Andrés E; Robledo-Restrepo, Jaime A

2014-01-01

Using cost-benefit analysis for comparing the thin-layer agar culture method to the standard multiple proportion method used in diagnosing multidrug-resistant tuberculosis (MDR TB). A cost-benefit evaluation of two diagnostic tests was made at the Corporación para Investigaciones Biológicas (CIB) in Medellín, Colombia. 100 patients were evaluated; 10.8% rifampicin resistance and 14.3% isoniazid resistance were found. A computer-based decision tree model was used for cost-effectiveness analysis (Treeage Pro); the thin-layer agar culture method was most cost-effective, having 100% sensitivity, specificity and predictive values for detecting rifampicin and isoniazid resistance. The multiple proportion method value was calculated as being US$ 71 having an average 49 day report time compared to US$ 18 and 14 days for the thin-layer agar culture method. New technologies have been developed for diagnosing tuberculosis which are apparently faster and more effective; their operating characteristics must be evaluated as must their effectiveness in terms of cost-benefit. The present study established that using thin-layer agar culture was cheaper, equally effective and could provide results more quickly than the traditional method. This implies that a patient could receive MDR TB treatment more quickly.

Dissolution kinetics for alumina in cryolite melts. Distribution of alumina in the electrolyte of industrial aluminium cells

Energy Technology Data Exchange (ETDEWEB)

Kobbeltvedt, Ove

1997-12-31

This thesis contributes to the understanding of which factors determine the rate of dissolution of alumina added to the bath in alumina reduction cells. Knowing this may help reduce the occurrences of operation interruptions and thus make it possible to produce aluminium using less energy. When alumina powder was added to a stirred cryolite melt, the alumina dissolved in two distinct main stages. In the first stage, the dissolution rate was very high, which reflects dissolution of single alumina grains that are being dispersed in the bath upon addition. In the second stage, lumps of alumina infiltrated with bath dissolved at a rate considerably slower than that of the first stage. The formation of these alumina agglomerates is the most important contributor to slow dissolution. The parameters varied in the experiments were convection, batch size, and temperature of the bath and of the added alumina. Increased gas stirring of the bath speeded up dissolution in both stages but the size of the batch was of little significance. Increasing the bath temperature had no effect in the first stage but speeded up dissolution considerably in the second stage. Compared to adding alumina at room temperature, preheating it to a high temperature (600 {sup o}C) increased the dissolution rate in the first stage while preheating to lower temperatures (100-300 {sup o}C) decreased the dissolution rate. In the second stage, preheating slowed the dissolution. The two latter phenomena of reduced dissolution rates are ascribed to the removal of moisture from the alumina upon preheating. The bath flow and the distribution of alumina in the bath were measured in four different types of cells. It was found that if a certain asymmetry of the magnetic field traverse to the cell was present, due to the presence of risers, then loops of high velocity bath flow occurred near the short ends of the cell. Thus, alumina added near the short ends is effectively transferred away from the feeding

Step-by-step seeding procedure for preparing HKUST-1 membrane on porous α-alumina support.

Science.gov (United States)

Nan, Jiangpu; Dong, Xueliang; Wang, Wenjin; Jin, Wanqin; Xu, Nanping

2011-04-19

Metal-organic framework (MOF) membranes have attracted considerable attention because of their striking advantages in small-molecule separation. The preparation of an integrated MOF membrane is still a major challenge. Depositing a uniform seed layer on a support for secondary growth is a main route to obtaining an integrated MOF membrane. A novel seeding method to prepare HKUST-1 (known as Cu(3)(btc)(2)) membranes on porous α-alumina supports is reported. The in situ production of the seed layer was realized in step-by-step fashion via the coordination of H(3)btc and Cu(2+) on an α-alumina support. The formation process of the seed layer was observed by ultraviolet-visible absorption spectroscopy and atomic force microscopy. An integrated HKUST-1 membrane could be synthesized by the secondary hydrothermal growth on the seeded support. The gas permeation performance of the membrane was evaluated. © 2011 American Chemical Society

Purification of 3H-dihydroalprenolol by two dimensional thin layer chromatography

International Nuclear Information System (INIS)

Smisterova, J.; Soltes, L.; Kallay, Z.

1989-01-01

A two dimensional thin-layer chromatographic method was developed for the purification and analysis of (-)-[ 3 H]dihydroalprenolol by using an acidic mobile phase (butanol/water/acetic acid 25:10:4, v/v) in one direction and a basic eluent (chloroform/acetone/triethylamine 50:40:10, v/v) in another direction. (author)

Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

Science.gov (United States)

Kolkovsky, Vl.; Stübner, R.

2018-04-01

The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.

Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Bhaskaran, M. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)], E-mail: madhu.bhaskaran@gmail.com; Sriram, S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia); Mitchell, D.R.G.; Short, K.T. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation (ANSTO), PMB 1, Menai, New South Wales 2234 (Australia); Holland, A.S. [Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria 3001 (Australia)

2008-09-30

This article discusses the results from X-ray diffraction (XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited on multi-layer coatings on silicon. The films were deposited by RF magnetron sputtering on a metal coated substrate. The aim was to exploit the pronounced piezoelectric effect that is theoretically expected normal to the substrate. This work highlighted the influence that the bottom electrode architecture exerts on the final crystalline orientation of the deposited thin films. A number of bottom electrode architectures were used, with the uppermost metal layer on which PSZT was deposited being gold or platinum. The XRD analysis revealed that the unit cell of the PSZT thin films deposited on gold and on platinum were deformed, relative to expected unit cell dimensions. Experimental results have been used to estimate the unit cell parameters. The XRD results were then indexed based on these unit cell parameters. The choice and the thickness of the intermediate adhesion layers influenced the relative intensity, and in some cases, the presence of perovskite peaks. In some cases, undesirable reactions between the bottom electrode layers were observed, and layer architectures to overcome these reactions are also discussed.

ZIF-8 Membranes with Improved Reproducibility Fabricated from Sputter-Coated ZnO/Alumina Supports

KAUST Repository

Yu, Jian; Pan, Yichang; Wang, Chongqing; Lai, Zhiping

2015-01-01

for reproducible fabrication of high-quality membranes. In this study, high-quality ZIF-8 membranes were prepared through hydrothermal synthesis under the partial self-conversion of sputter-coated ZnO layer on porous α-alumina supports. The reproducibility

Investigation of Removal Possibilities of Colloidal Alumina from Aqueous Solution by the Use of Anionic Polyacrylamide

International Nuclear Information System (INIS)

Wisniewska, M.; Chibowski, S.; Urban, T.

2016-01-01

Purification of drinking and industrial water required usage of high molecular weight polymer to cause flocculation process of dispersed suspension of contaminants. Poly electrolytes, including ionic polyacrylamide are especially appropriate for these purposes, because in this case the suspension stability can be controlled by both steric and electrostatic forces. Thus the influence of solution p H and hydrolysis degree (carboxyl groups content) of anionic polyacrylamide (PAM) on the alumina (Al_2O_3) suspension stability were studied. The turbidimetry was applied for determination of the examined systems stability. The mechanism of suspension stabilization or destabilization in the polymer presence was proposed on the basis of determined parameters: adsorbed amount of PAM, its adsorption layer thickness, linear dimensions of macromolecules in the solution and zeta potential of alumina particles covered with the polyacrylamide layer. The greatest decrease of the alumina suspension stability in the polymer presence in comparison to that without the polymer was obtained at p H 6 after the addition of PAMs with higher molecular weight (i.e. 14 000 0000) and hydrolysis degrees 20 and 30% (efficient neutralization of solid surface charge). In turn, the most unstable alumina system proved to be that prepared at p H 9 containing PAM with the highest molecular weight and the greatest hydrolysis degree (causing the most effective bridging flocculation).

Thin-layer effects in glaciological seismic amplitude-versus-angle (AVA analysis: implications for characterising a subglacial till unit, Russell Glacier, West Greenland

Directory of Open Access Journals (Sweden)

A. D. Booth

2012-08-01

Full Text Available Seismic amplitude-versus-angle (AVA methods are a powerful means of quantifying the physical properties of subglacial material, but serious interpretative errors can arise when AVA is measured over a thinly-layered substrate. A substrate layer with a thickness less than 1/4 of the seismic wavelength, λ, is considered "thin", and reflections from its bounding interfaces superpose and appear in seismic data as a single reflection event. AVA interpretation of subglacial till can be vulnerable to such thin-layer effects, since a lodged (non-deforming till can be overlain by a thin (metre-scale cap of dilatant (deforming till. We assess the potential for misinterpretation by simulating seismic data for a stratified subglacial till unit, with an upper dilatant layer between 0.1–5.0 m thick (λ / 120 to > λ / 4, with λ = 12 m. For dilatant layers less than λ / 6 thick, conventional AVA analysis yields acoustic impedance and Poisson's ratio that indicate contradictory water saturation. A thin-layer interpretation strategy is proposed, that accurately characterises the model properties of the till unit. The method is applied to example seismic AVA data from Russell Glacier, West Greenland, in which characteristics of thin-layer responses are evident. A subglacial till deposit is interpreted, having lodged till (acoustic impedance = 4.26±0.59 × 10⁶ kg m⁻² s⁻¹ underlying a water-saturated dilatant till layer (thickness < 2 m, Poisson's ratio ~ 0.5. Since thin-layer considerations offer a greater degree of complexity in an AVA interpretation, and potentially avoid misinterpretations, they are a valuable aspect of quantitative seismic analysis, particularly for characterising till units.

Alumina Yield in the Bayer Process

Science.gov (United States)

Den Hond, R.

The alumina industry has historically been able to reduce alumina production costs, by increasing the liquor alumina yield. To know the potential for further yield increases, the phase diagram of the ternary system Na2O-Al2O -H2O at various temperature levels was analysed. It was found that the maximum theorical precipitation alumina yield is 160 g/l, while that for digestion was calculated to be 675 g/l.

Drag crisis moderation by thin air layers sustained on superhydrophobic spheres falling in water

KAUST Repository

Jetly, Aditya

2018-01-22

We investigate the effect of thin air layers naturally sustained on superhydrophobic surfaces on the terminal velocity and drag force of metallic spheres free falling in water. The surface of 20 mm to 60 mm steel or tungsten-carbide spheres is rendered superhydrophobic by a simple coating process that uses commercially available hydrophobic agent. By comparing the free fall of unmodified spheres and superhydrophobic spheres in a 2.5 meters tall water tank, It is demonstrated that even a very thin air layer (~ 1 – 2 μm) that covers the freshly dipped superhydrophobic sphere, can reduce the drag force on the spheres by up to 80 %, at Reynolds numbers 105 - 3×105 , owing to an early drag crisis transition. This study complements prior investigations on the drag reduction efficiency of model gas layers sustained on heated metal spheres falling in liquid by the Leidenfrost effect. The drag reduction effects are expected to have significant implication for the development of sustainable air-layer-based energy saving technologies.

POROUS MEMBRANE TEMPLATED SYNTHESIS OF POLYMER PILLARED LAYER

Institute of Scientific and Technical Information of China (English)

Zhong-wei Niu; Dan Li; Zhen-zhong Yang

2003-01-01

The anodic porous alumina membranes with a definite pore diameter and aspect ratio were used as templates to synthesize polymer pillared layer structures. The pillared polymer was produced in the template membrane pores, and the layer on the template surfaces. Rigid cured epoxy resin, polystyrene and soft hydrogel were chosen to confirm the methodology. The pillars were in the form of either tubes or fibers, which were controlled by the alumina membrane pore surface wettability. The structural features were confirmed by scanning electron microscopy results.

Effect of a hard coat layer on buckle delamination of thin ITO layers on a compliant elasto-plastic substrate: an experimental–numerical approach

NARCIS (Netherlands)

Sluis, van der O.; Abdallah, Amir; Bouten, P.C.P.; Timmermans, P.H.M.; Toonder, den J.M.J.; With, de G.

2011-01-01

Layer buckling and delamination is a common interfacial failure phenomenon in thin film multi-layer structures that are used in flexible display applications. Typically, the substrate is coated on both sides with a hybrid coating, calleda hard coat (HC), which acts as a gas barrier and also

Rapid identification of graphene flakes: alumina does it better

International Nuclear Information System (INIS)

De Marco, P; Nardone, M; Santucci, S; Ottaviano, L; Del Vitto, A; Alessandri, M

2010-01-01

We report a systematic investigation of the colour contrast (CC) of graphene (one, two and three layers) on 50, 72 and 80 nm thick Al 2 O 3 /Si(100) and 100 and 300 nm thick SiO 2 /Si(100). The CC is determined by the analysis of optical microscopy images taken under white light illumination. A corresponding assignment of graphene in the single-layer, double-layer and trilayer phases is made using micro-Raman spectroscopy. A quantitative evaluation allows us to conclude that the colour contrast between 72 nm alumina and graphene is significantly larger than that between 300 nm silicon oxide and graphene (by factors of 2.2, 2.0 and 3.3 for the single-layer, double-layer and trilayer graphene flakes respectively). Moreover, data indicate that, to increase visibility, the use of a red or a green light is preferable.

Use of the water-soluble fluor sodium salicylate for fluorographic detection of tritium in thin-layer chromatograms and nitrocellulose blots

International Nuclear Information System (INIS)

Lucher, L.A.; Lego, T.

1989-01-01

We have determined that sodium salicylate, a water-soluble fluor which we use routinely for fluorography with polyacrylamide gels, is also useful for fluorography with thin-layer media. Detection of 3 H-labeled material applied to thin-layer chromatography plates, or nitrocellulose membranes, can be enhanced up to 150-fold after treatment with an aqueous solution of 2 M sodium salicylate, while detection of 35 S-labeled material is enhanced only about 2-fold. We demonstrate the utility of sodium salicylate fluorography in detecting 3H-labeled palmitic acid following thin-layer chromatography and 3 H-labeled proteins following blotting to nitrocellulose

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Influence of Magnetron Effect on Barium Hexaferrite Thin Layers

International Nuclear Information System (INIS)

Hassane, H.; Chatelon, J.P.; Rousseau, J.J; Siblini, A.; Kriga, A.

2011-01-01

In this paper, we study the effects of a magnet, located in the cathode, on barium hexaferrite thin films deposited by RF magnetron sputtering technique. During the process, these effects can modify thickness, roughness and stress of coatings. The characteristics of the deposited layers depend on the substrate position that is located opposite of magnetron cathode. In the m agnetron area , one can observe that the high stress can produce cracks or detachment of layers and the increasing of both depositing rate and surface roughness. After sputtering elaboration, barium hexaferrite films are in a compressive stress mode. But, after the post-deposition heat treatment these films are in a tensile stress mode. To improve the quality of BaM films, the subsrtate has to be set outside the magnetron area. (author)

Effect of atmospheric-pressure plasma treatment on the adhesion properties of a thin adhesive layer in a selective transfer process

Science.gov (United States)

Yoon, Min-Ah; Kim, Chan; Hur, Min; Kang, Woo Seok; Kim, Jaegu; Kim, Jae-Hyun; Lee, Hak-Joo; Kim, Kwang-Seop

2018-01-01

The adhesion between a stamp and thin film devices is crucial for their transfer on a flexible substrate. In this paper, a thin adhesive silicone layer on the stamp was treated by atmospheric pressure plasma to locally control the adhesion strength for the selective transfer. The adhesion strength of the silicone layer was significantly reduced after the plasma treatment, while its surface energy was increased. To understand the inconsistency between the adhesion strength and surface energy changes, the surface properties of the silicone layer were characterized using nanoindentation and X-ray photoelectron spectroscopy. These techniques revealed that a thin, hard, silica-like layer had formed on the surface from plasma-enhanced oxidation. This layer played an important role in decreasing the contact area and increasing the interfacial slippage, resulting in decreased adhesion. As a practical application, the transfer process was demonstrated on GaN LEDs that had been previously delaminated by a laser lift-off (LLO) process. Although the LEDs were not transferred onto the treated adhesive layer due to the reduced adhesion, the untreated adhesive layer could readily pick up the LEDs. It is expected that this simple method of controlling the adhesion of a stamp with a thin adhesive layer would enable a continuous, selective and large-scale roll-to-roll selective transfer process and thereby advance the development of flexible, stretchable and wearable electronics.

Sintering behaviour of spinel–alumina composites

Indian Academy of Sciences (India)

% alumina dissolves in spinel (MgAl2O4) at 1600°C. Solid solubility of alumina in spinel decreases rapidly with decreasing temperature, which causes exsolution of alumina from spinel phase. Previous work of one of the authors revealed that ...

Analysis of influence of buffer layers on microwave propagation through high-temperature superconducting thin films

International Nuclear Information System (INIS)

Ceremuga, J.; Barton, M.; Miranda, F.

1994-01-01

Methods of analysis of microwave propagation through superconducting thin films with buffer layers on dielectric substrates have been discussed. Expressions describing the transmission coefficient S 21 through the structure and the complex conductivity sigma of a superconductor in an analytical form have been derived. The derived equations are valid for microwave propagation in waveguides as well as in free space with relevant definition of impedances. Using the obtained solutions, the influences of buffer layers' parameters (thickness, relative permittivity and loss tangent) on the transmission coefficient has been investigated using MATLAB. Simulations have been performed for 10 GHz transmission through YBa 2 Cu 3 O 7 films on sapphire with SrTiO 3 and CeO 2 buffer layers and on silicon with CaF 2 and YSZ buffer layers. To illustrate the simulations, measurements of the transmission through YBCO film on sapphire with SrTiO 3 buffer layer have been performed. It has been shown that even lossy buffer layers have very little impact (smaller than 1% in magnitude and 0.3% in phase) on the transmission coefficient through superconducting thin films, providing their thickness is below 10 mu m. (author)

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Relating performance of thin-film composite forward osmosis membranes to support layer formation and structure

KAUST Repository

Tiraferri, Alberto

2011-02-01

Osmotically driven membrane processes have the potential to treat impaired water sources, desalinate sea/brackish waters, and sustainably produce energy. The development of a membrane tailored for these processes is essential to advance the technology to the point that it is commercially viable. Here, a systematic investigation of the influence of thin-film composite membrane support layer structure on forward osmosis performance is conducted. The membranes consist of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation. By systematically varying the conditions used during the casting of the polysulfone layer, an array of support layers with differing structures was produced. The role that solvent quality, dope polymer concentration, fabric layer wetting, and casting blade gate height play in the support layer structure formation was investigated. Using a 1M NaCl draw solution and a deionized water feed, water fluxes ranging from 4 to 25Lm-2h-1 with consistently high salt rejection (>95.5%) were produced. The relationship between membrane structure and performance was analyzed. This study confirms the hypothesis that the optimal forward osmosis membrane consists of a mixed-structure support layer, where a thin sponge-like layer sits on top of highly porous macrovoids. Both the active layer transport properties and the support layer structural characteristics need to be optimized in order to fabricate a high performance forward osmosis membrane. © 2010 Elsevier B.V.

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

Energy Technology Data Exchange (ETDEWEB)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Kinge, Sachin [Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)

2015-10-12

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

Ni-YSZ cermet substrate supported thin SDC and YSZ+SDC bi-layer SOFCs

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.; Robertson, M.; Deces-Petit, C.; Xie, Y.; Hui, R.; Yick, S.; Styles, E.; Roller, J.; Kesler, O.; Qu, W.; Jankovic, J.; Tang, Z.; Perednis, D.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

2005-07-01

One of the disadvantages of a ceria-based electrolyte is that it becomes a mixed conductor at anode conditions, which causes cell voltage loss and fuel efficiency loss due to internal shorting. Chemical and mechanical stability is another concern for long-term service. To lower manufacturing costs, efforts have been made to bring proven semiconductor manufacturing technology to Solid Oxide Fuel Cells (SOFCs). This study employed Tape casting of cermet substrates, Screen-printing of functional layers and Co-firing of cell components (TSC) to fabricate nickel (Ni)-cermet supported cells with mainly ceria-based thin electrolytes. Ni-Yttria-Stabilized Zirconia (YSZ) cermet supported cell with Samaria Doped Ceria (SDC) single layer electrolytes and YSZ+SDC bi-layer electrolytes were successfully developed for low-temperature performance characterization. The elemental distribution at the cell interface was mapped and the electrochemical performance of the cells was recorded. Many high-Zr-content micro-islands were found on the thin SDC surface. The influence of co-firing temperature and thin-film preparation methods on the Zr-islands' appearance was also investigated. Using in-situ sintered cathodes, high performance of the SDC cells was obtained. It was concluded that the bi-layer cells did show higher Open Circuit Voltage (OCV) values, with 1180 mW/cm{sup 2} at 650 degrees C, as well as good performance at 700-800 degrees C, with near OCV value. However, their performance was much lower than those of the SDC cells at low operating temperature. Zr-micro-islands formation on the SDC electrolyte was observed and investigated. 6 refs., 5 tabs., 7 figs.

Surface preparation of gold nanostructures on glass by ultraviolet ozone and oxygen plasma for thermal atomic layer deposition of Al{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Lancaster, Cady A., E-mail: lancaster@chem.utah.edu; Shumaker-Parry, Jennifer S., E-mail: shumaker-parry@chem.utah.edu

2016-08-01

Thin film deposition to create robust plasmonic nanomaterials is a growing area of research. Plasmonic nanomaterials have tunable optical properties and can be used as substrates for surface-enhanced spectroscopies. Due to the surface sensitivity and the dependence of the near-field behavior on structural details, degradation from cleaning or spectroscopic interrogation causes plasmonic nanostructures to lose distinctive localized surface plasmon resonances or exhibit diminished optical near-field enhancements over time. To decrease degradation, conformal thin films of alumina are deposited on nanostructured substrates using atomic layer deposition. While film growth on homogenous surfaces has been studied extensively, atomic layer deposition-based film growth on heterogeneous nanostructured surfaces is not well characterized. In this report, we have evaluated the impact of oxygen plasma and ultraviolet ozone pre-treatments on Au nanoparticle substrates for thin film growth by monitoring changes in plasmonic response and nanostructure morphology. We have found that ultraviolet ozone is more effective than oxygen plasma for cleaning gold nanostructured surfaces, which is in contrast to bulk films of the same material. Our results show that oxygen plasma treatment negatively impacts the nanostructure and alumina coating based on both scanning electron microscopy analysis of morphology and changes in the plasmonic response. - Highlights: • Plasmonic response indicates oxygen plasma damages Au structures and Al{sub 2}O{sub 3} films. • Ultraviolet ozone (UVO) re-activates aged Al{sub 2}O{sub 3}-coated Au nanostructures. • UVO treatments do not damage Au or Al{sub 2}O{sub 3}-coated nanostructures.

High-permeance crosslinked PTMSP thin-film composite membranes as supports for CO2 selective layer formation

Directory of Open Access Journals (Sweden)

Stepan D. Bazhenov

2016-10-01

Full Text Available In the development of the composite gas separation membranes for post-combustion CO2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology. The primary requirements to the membrane supports are concerned with their high CO2 permeance. In this work, the membrane supports with desired characteristics were developed as high-permeance gas separation thin film composite (TFC membranes with the thin defect-free layer from the crosslinked highly permeable polymer, poly[1-(trimethylsilyl-1-propyne] (PTMSP. This layer is insoluble in chloroform and can be used as a gutter layer for the further deposition of the СО2-selective materials from the organic solvents. Crosslinking of PTMSP was performed using polyethyleneimine (PEI and poly (ethyleneglycol diglycidyl ether (PEGDGE as crosslinking agents. Optimal concentrations of PEI in PTMSP and PEGDGE in methanol were selected in order to diminish the undesirable effect on the final membrane gas transport characteristics. The conditions of the kiss-coating technique for the deposition of the thin defect-free PTMSP-based layer, namely, composition of the casting solution and the speed of movement of the porous commercial microfiltration-grade support, were optimized. The procedure of post-treatment with alcohols and alcohol solutions was shown to be crucial for the improvement of gas permeance of the membranes with the crosslinked PTMSP layer having thickness ranging within 1–2.5 μm. The claimed membranes showed the following characteristics: CO2 permeance is equal to 50–54 m3(STP/(m2 h bar (18,500–20,000 GPU, ideal CO2/N2 selectivity is 3.6–3.7, and their selective layers are insoluble in chloroform. Thus, the developed high-permeance TFC membranes are considered as a promising supports for further modification by enhanced CO2 selective layer formation. Keywords: Thin-film composite membrane

Metal–Organic Framework-Functionalized Alumina Membranes for Vacuum Membrane Distillation

Directory of Open Access Journals (Sweden)

Jian Zuo

2016-12-01

Full Text Available Nature-mimetic hydrophobic membranes with high wetting resistance have been designed for seawater desalination via vacuum membrane distillation (VMD in this study. This is achieved through molecular engineering of metal–organic framework (MOF-functionalized alumina surfaces. A two-step synthetic strategy was invented to design the hydrophobic membranes: (1 to intergrow MOF crystals on the alumina tube substrate and (2 to introduce perfluoro molecules onto the MOF functionalized membrane surface. With the first step, the surface morphology, especially the hierarchical roughness, can be controlled by tuning the MOF crystal structure. After the second step, the perfluoro molecules function as an ultrathin layer of hydrophobic floss, which lowers the surface energy. Therefore, the resultant membranes do not only possess the intrinsic advantages of alumina supports such as high stability and high water permeability, but also have a hydrophobic surface formed by MOF functionalization. The membrane prepared under an optimum condition achieved a good VMD flux of 32.3 L/m2-h at 60 °C. This study may open up a totally new approach for design of next-generation high performance membrane distillation membranes for seawater desalination.

Synthesis of Alumina using the solvo thermal method

International Nuclear Information System (INIS)

Meor Yusoff Meor Sulaiman; Masliana Muslimin

2007-01-01

The paper describes work done on synthesis of α- and β-alumina by using the solvo thermal technique. Synthesis of both these aluminas involves the transition reactions of the aluminium hydroxide into alumina by a dehydroxylation process. As there are many forms of transition aluminas produced during this process, x-ray diffraction (XRD) technique was used to identify α-alumina and β-alumina. After establishing the optimum conditions for the production of a single-phase α- and β-aluminas, characteristic study on the product was performed. An important parameter in establishing nano sized powders is their crystallite size and analysis of the β-alumina shows that it is a nano sized powder with a size of 28 nm while the α-alumina has a crystallite size of 200 nm. Other properties analysed include morphology, surface area and particle size. (author)

Rosenzweig instability in a thin layer of a magnetic fluid

Science.gov (United States)

Korovin, V. M.

2013-12-01

A simple mathematical model of the initial stage of nonlinear evolution of the Rosenzweig instability in a thin layer of a nonlinearly magnetized viscous ferrofluid coating a horizontal nonmagnetizable plate is constructed on the basis of the system of equations and boundary conditions of ferrofluid dynamics. A dispersion relation is derived and analyzed using the linearized equations of this model. The critical magnetization of the initial layer with a flat free surface, the threshold wavenumber, and the characteristic time of evolution of the most rapidly growing mode are determined. The equation for the neutral stability curve, which is applicable for any physically admissible law of magnetization of a ferrofluid, is derived analytically.

Reuse of activated alumina

Energy Technology Data Exchange (ETDEWEB)

Hobensack, J.E. [Martin Marietta Energy Systems, Inc., Piketon, OH (United States)

1991-12-31

Activated alumina is used as a trapping media to remove trace quantities of UF{sub 6} from process vent streams. The current uranium recovery method employs concentrated nitric acid which destroys the alumina pellets and forms a sludge which is a storage and disposal problem. A recently developed technique using a distilled water rinse followed by three dilute acid rinses removes on average 97% of the uranium, and leaves the pellets intact with crush strength and surface area values comparable with new material. Trapping tests confirm the effectiveness of the recycled alumina as UF{sub 6} trapping media.

Interfacial spectroscopic characterization of organic/ferromagnet hetero-junction of 3,4,9,10-perylene-teracarboxylic dianhydride-based organic spin valves

Energy Technology Data Exchange (ETDEWEB)

Hong, Jhen-Yong; Ou Yang, Kui-Hon; Li, Kai-Shin [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Wang, Bo-Yao [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Shiu, Hung-Wei; Chen, Chia-Hao; Chan, Yuet-Loy; Wei, Der-Hsin; Chang, Fan-Hsiu; Lin, Hong-Ji [National Synchrotron Radiation Research Center, 30076 Hsinchu, Taiwan (China); Chiang, Wen-Chung, E-mail: wchiang@faculty.pccu.edu.tw [Department of Physics, Chinese Culture University, 11114 Taipei, Taiwan (China); Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China)

2014-02-24

We report interfacial characterization of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA)-based organic spin valves (OSV) dusted with a thin layer of partially oxidized alumina at the organic semiconductor (OSC)/ferromagnet (FM) interfaces. Up to 13.5% magnetoresistance is achieved at room temperature. X-ray photoelectron spectroscopy measurements reveal interfacial electronic interaction between PTCDA and FM while the application of a thin alumina layer at the PTCDA/FM interfaces prevents the electronic hybridization and effectively preserves the spin injection into the OSC spacer. This finding demonstrates the critical effect of interfacial structure on magnetotransport behavior in OSV.

Interaction between cholesterol and non-ionic surfactants studied by thin-layer chromatography

Czech Academy of Sciences Publication Activity Database

Forgács, E.; Cserháti, T.; Farkas, O.; Eckhardt, Adam; Mikšík, Ivan; Deyl, Zdeněk

2004-01-01

Roč. 27, č. 13 (2004), s. 1981-1992 ISSN 1082-6076 Grant - others:CZ-HU(CZ) Cooperation program Institutional research plan: CEZ:AV0Z5011922 Keywords : cholesterol * non-ionic surfactant * thin - layer chromatography Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 0.836, year: 2004

Thin-Layer Chromatography/Desorption Atmospheric Pressure Photoionization Orbitrap Mass Spectrometry of Lipids

Czech Academy of Sciences Publication Activity Database

Rejšek, Jan; Vrkoslav, Vladimír; Vaikkinen, A.; Haapala, M.; Kauppila, T. J.; Kostiainen, R.; Cvačka, Josef

2016-01-01

Roč. 88, č. 24 (2016), s. 12279-12286 ISSN 0003-2700 R&D Projects: GA ČR GAP206/12/0750 Institutional support: RVO:61388963 Keywords : desorption atmospheric pressure photoionization * thin-layer chromatography * lipids Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 6.320, year: 2016

Attrition resistant gamma-alumina catalyst support

Science.gov (United States)

Singleton, Alan H.; Oukaci, Rachid; Goodwin, James G.

2006-03-14

A .gamma.-alumina catalyst support having improved attrition resistance produced by a method comprising the steps of treating a particulate .gamma.-alumina material with an acidic aqueous solution comprising water and nitric acid and then, prior to adding any catalytic material thereto, calcining the treated .gamma.-alumina.

Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

International Nuclear Information System (INIS)

Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

1998-01-01

Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

Study of wear in piston ring of the vehicle engine using thin layer activation technique

International Nuclear Information System (INIS)

Khan, I.H.; Farooq, M.; Ghiyas-ud-Din; Gul, S.; Qureshi, R.M.; Jin Joon Ha; Wallace, G.

2004-01-01

Thin Layer Activation (TLA) technique was used to investigate piston ring wear of a six cylinders vehicle engine at various engine speeds and load conditions. The activated ring was installed in cylinder no.5 of the engine at middle position (compression ring). Monitoring was carried out on-line (extremely on the engine block) using 'Thin Layer Difference Method'. The calibration curve of the activity profile was prepared with the help of activation parameters determined at the time of ring activation in particle accelerator. The results show that the piston ring wear varies from 0.309 micron/hour to 0.404 micron/hour at given engine speed and load conditions. (author)

Thin plasma-polymerized layers of hexamethyldisiloxane for humidity sensor development

International Nuclear Information System (INIS)

Guermat, N.; Bellel, A.; Sahli, S.; Segui, Y.; Raynaud, P.

2009-01-01

The response of resistive-type sensors based on thin hexamethyldisiloxane layers to relative humidity (RH) was evaluated. Humidity sensitive layers were plasma polymerized at low frequency glow discharge using a capacitively coupled parallel plate reactor. The sensor design comprises the absorbing layer deposited on clean glass substrate with comb-shape aluminum electrodes (interdigitated structure). The change in electrical impedance of the sensing film was monitored as the device was exposed to humidity. The variation of the plasma-polymerization parameters resulted in different humidity sensing properties which could be correlated to the results of Fourier transform infrared spectroscopy (FTIR). The deposited films exhibited a detectable response to RH ranging from 30 to 95% with low hysteresis, good reproducibility and stability in long-term use. Films with a greater thickness showed a significant decrease in the humidity sensing capability. FTIR analysis revealed the presence of SiH bonding groups, which are frequently linked to the film density. The increase in the plasma discharge power induced also a significant decrease in the diffusion process of water vapor inside the sensitive layer bulk.

Phytochemical analysis of ethanolic extract of Dichrostachys Cinerea W and Arn leaves by a thin layer chromatography, high performance thin layer chromatography and column chromatography

OpenAIRE

M Vijayalakshmi; K Periyanayagam; K Kavitha; K Akilandeshwari

2013-01-01

Background: The leaves of Dichrostachys cinerea are used as laxative, diuretic, painkiller. It is also used in the treatment of gonorrhoea, boils, oedema, gout, veneral diseases and nasopharyngeal affections, etc. Materials and Methods: The Phytochemical investigation of ethanolic extract of D. cinerea leaves were performed by standard chemical tests, thin layer chromatography (TLC) by using various solvent systems, and by high performance liquid chromatography (HPTLC). Two compounds were...

Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

International Nuclear Information System (INIS)

Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

2012-01-01

Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

A Simple Thin Layer Chromatography Method for Separation of Selected Natural Steroid Hormones

International Nuclear Information System (INIS)

Nowakowska, J.; Rudnicka-Litka, K.; Ciura, K.; Pikul, P.; Piotrowicz, J.

2015-01-01

Chromatographic properties of seven steroids: estrogens (β-estradiol and estrone), androgens (testosterone, methyltestosterone, trans-androsterone), progesterone and cholesterol have been studied by planar chromatography with usage of High Performance Thin Layer Chromatography (HPTLC) and Thin Layer Chromatography (TLC) plates. Normal, reversed and cyano-bonded silica stationary phases were tested with five binary mobile phases (acetonitrile-water, acetonitrile-DMSO, acetonitrile-methanol, acetone-petroleum ether, acetone-water) in which the concentration of organic modifier varied from 0 to 100 % (v/v). This study reports the optimization of steroid hormones separation. Principal Component Analysis (PCA) based on calculated molecular descriptors quantitatively differentiating solutes was performed in order to investigate the similarity and dissimilarity between tested compounds. The separation abilities of mobile and stationary phases were compared based on separation factor α. Chromatographic retention data and possible retention mechanisms also were discussed. (author)

Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers

International Nuclear Information System (INIS)

Takahara, Seiichi; Morimoto, Akiharu; Kawae, Takeshi; Kumeda, Minoru; Yamada, Satoru; Ohtsubo, Shigeru; Yonezawa, Yasuto

2008-01-01

Lead zirconate-titanate Pb(Zr,Ti)O 3 (PZT) capacitors with Pt bottom electrodes were prepared on MgO substrates by pulsed laser deposition (PLD) technique employing SrTiO 3 (STO) template layer. Perovskite PZT thin films are prepared via stoichiometric target using the ultra-thin STO template layers while it is quite difficult to obtain the perovskite PZT on Pt electrode via stoichiometric target in PLD process. The PZT capacitor prepared with the STO template layer showed good hysteresis and leakage current characteristics, and it showed an excellent fatigue resistance. The ultra-thin STO template layers were characterized by angle-resolved X-ray photoelectron spectroscopy measurement. The effect of the STO template layer is discussed based on the viewpoint of the perovskite nucleation and diffusion of Pb and O atoms

Wear of alumina on alumina total hip prosthesis - effect of lubricant on hip simulator test

Energy Technology Data Exchange (ETDEWEB)

Ueno, M.; Amino, H. [Kyocera Corp., Fushimi, Kyoto (Japan). Bioceram Div.; Oonishi, H. [Dept. of Orthopaedic Surgery, Artificial Joint Sect. and Biomat. Res. Lab., Osaka Minami National Hospital, Osaka (Japan); Clarke, I.C.; Good, V. [Dept. of Orthopaedic Surgery, Loma Linda Univ. Medical Center, CA (United States)

2001-07-01

The complex wear-friction-lubrication behavior of alumina on alumina combination in total hip prostheses (THP) was investigated using a hip joint simulator. The objectives of this study were to evaluate the effect of the ball/cup clearance and of the lubricant conditions. Alumina bearings were categorized in three diametrical clearances, 20-30, 60-70 and 90-100 micrometer, three each and wear tests were carried out with 90% bovine serum. There was no significant difference between three groups. Volumetric wear in the run-in phase for all tested nine ceramic liners averaged 0.27mm{sup 3}/million cycles and in the steady-state phase averaged 0.0042mm{sup 3}/million cycles. In addition to the 90% serum, 27% serum and saline were used as the lubricant for evaluate the effect of serum concentration on alumina on alumina wear couples. The wear test results showed that in all tested conditions the wear trends of alumina BEARING were bi-phasic and wear volume could be affected by the serum concentration. Both ''Run-in'' and ''Steady-state'' wear rates in 90% bovine serum were three times higher than those in saline. (orig.)

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Stable, Microfabricated Thin Layer Chromatography Plates without Volume Distortion on Patterned, Carbon and Al2O3-Primed Carbon Nanotube Forests

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Gupta, Vipul; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Vanfleet, Richard; Davis, Robert C.; Linford, Matthew R.

2012-09-28

In a recent report (Song, J.; et al., Advanced Functional Materials 2011, 21, 1132-1139) some of us described the fabrication of thin layer chromatography (TLC) plates from patterned carbon nanotube (CNT) forests, which were directly infiltrated/coated with silicon by low pressure chemical vapor deposition (LPCVD) of silicon using SiH4. Following infiltration, the nanotubes were removed from the assemblies and the silicon simultaneously converted to SiO2 in a high temperature oxidation step. However, while straightforward, this process had some shortcomings, not the least of which was some distortion of the lithographically patterned features during the volume expansion that accompanied oxidation. Herein we overcome theis issue and also take substantial steps forward in the microfabrication of TLC plates by showing: (i) A new method for creating an adhesion promotion layer on CNT forests by depositing a few nanometers of carbon followed by atomic layer deposition (ALD) of Al2O3. This method for appears to be new, and X-ray photoelectron spectroscopy confirms the expected presence of oxygen after carbon deposition. ALD of Al2O3 alone and in combination with the carbon on patterned CNT forests was also explored as an adhesion promotion layer for CNT forest infiltration. (ii) Rapid, conformal deposition of an inorganic material that does not require subsequent oxidation: fast pseudo-ALD growth of SiO2 via alumina catalyzed deposition of tris(tert-butoxy)silanol onto the carbon/Al2O3-primed CNT forests. (iii) Faithful reproduction of the features in the masks used to microfabricate the TLC plates (M-TLC) this advance springs from the previous two points. (iv) A bonded (amino) phase on a CNT-templated microfabricated TLC plate. (v) Fast, highly efficient (125,000 - 225,000 N/m) separations of fluorescent dyes on M-TLC plates. (vi) Extensive characterization of our new materials by TEM, SEM, EDAX, DRIFT, and XPS. (vii) A substantially lower process temperature for the

BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates

NARCIS (Netherlands)

Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Mauczok, R.; Keur, W.; Hueting, Raymond Josephus Engelbart

2010-01-01

Nanocrystalline barium strontium titanate (BaxSr1−xTi1.02O3) thin films with a barium content of x=0.8, 0.9 and 1 have been fabricated in a metal–insulator–metal configuration on glass-planarized alumina substrates. Cost-effective processing measures have been utilized by using poly-crystalline

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

Study on alumina-alumina brazing for application in vacuum chambers of proton synchrotron

International Nuclear Information System (INIS)

Yadav, D.P.; Kaul, R.; Ganesh, P.; Shiroman, Ram; Tiwari, Pragya; Sridhar, R.; Kukreja, L.M.

2013-01-01

The paper describes an experimental study to standardize vacuum brazing process to obtain satisfactory high purity alumina brazed joints for application in rapid cycle proton synchrotron machine. Two different brazing routes, adopted for making alumina-alumina brazed joints, included (i) multi-step Mo-Mn metallization and brazing with BVAg-8 alloy and (ii) advanced single-step active brazing with CuSil-ABA alloy. Brazed alumina specimens, prepared by both the routes, yielded ultra high vacuum compatible, helium leak tight and bakeable joints. Active-brazed specimens exhibited satisfactory strength values in tensile and four-point bend tests. Metallized-brazed specimens, although exhibited relatively lower tensile strength than the targeted value, displayed satisfactory flexural strength in four-point bend test. The results of the study demonstrated that active brazing is the simple and cost effective alternative to conventional metallization route for producing satisfactory brazed joints for application in rapid cycle proton synchrotron machine. (author)

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Energy Technology Data Exchange (ETDEWEB)

Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-08-15

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

Deposition of thin layer (monoatomic layer) of barium on gold single crystal surfaces and studies of its oxidation employing X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ahmad, H.; Ahmad, R.; Khalid, M.; Alvi, R.A.

2007-01-01

Due to the high reactivity of barium with oxygen, some oxygen diffuse into the bulk to form bulk oxide and it is very difficult to differentiate the oxide over layer and the bulk oxide. To study the oxidation of barium surface layer, a thin layer (monolayer) of barium is developed over gold single crystal surface. Gold is selected as support because it is one of the least reactive metal in transition metal group and have very low probability of reaction with oxygen at room temperature (300K). Nitrous oxide (N/sub 2/O) was used as oxidant. Thin layer of barium was deposited on Au(100) surface. The barium coverage on gold surface was calculated that varied from 0.4 to 1.4 monolayer (ML). Photoelectron spectra for O(ls), N(ls), Ba (3d), and Au (4f) have been recorded on X-ray photoelectron spectrometer at different binding energy region specific for each element. The decomposition of nitrous oxide has been observed in all cases. It has found that nitrogen is evolved in the gaseous state and oxygen is adsorbed/chemisorbed on barium over layer. (author)

Low-temperature atomic layer deposition of MgO thin films on Si

International Nuclear Information System (INIS)

Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

2013-01-01

Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

Bibliography of paper and thin-layer chromatography 1970-1973 and survey of applications

International Nuclear Information System (INIS)

Macek, K.; Hais, I.M.; Kopecky, J.; Schwarz, V.; Gasparic, J.; Churacek, J.

1976-01-01

The present volume covers developments in both paper and thin-layer chromatography from 1970 to the middle of 1973 and is a continuation of the previous four volumes, published in 1960, 1962, 1968 and 1972. An author index is given

Modification of thin-layer systems by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Schattat, B.; Feyh, A.

2003-01-01

The electronic energy loss of swift heavy ions (MeV/amu) within a solid results in a highly excited cylindrical zone of some nm in diameter, within which all atoms may be in motion for some tens of ps (transient local melting). After cooling down, a defect-rich or even amorphous latent track is left in many cases, especially in insulating materials. The resulting property alterations (density, micro-structure, morphology, phase composition, etc.) have been investigated for many bulk materials, while only very few experiments have been carried out with thin-film systems. In the present paper, a summary will be given of our studies on the transport of matter in thin-film packages induced by irradiation with high-energy ions. These is, on the one hand, atomic mixing at the interfaces, which is especially pronounced in ceramic systems and which seems to occur by interdiffusion in the molten ion track. On the other hand, we have discovered a self-organisation phenomenon in swift-heavy-ion-irradiated NiO layers, which at low fluences first showed periodic cracking perpendicular to the projected beam direction. After application of high fluences, the NiO layer was reorganised in 100-nm-thick and 1-μm-high NiO lamellae of the same separation distance (1-3 μm) and orientation as found for the cracks. Both effects can be attributed to transient melting of the material surrounding the ion trajectory. (orig.)

Fabrication and characteristics of alumina-iron functionally graded materials

DEFF Research Database (Denmark)

He, Zeming; Ma, J.; Tan, G.E.B.

2009-01-01

. The microstructure and the composition of the prepared component were studied, and its flexural strength, fracture toughness, and fracture energy were tested and evaluated. The relative density and the Vickers hardness of each layer in the graded material were also measured. The correlation between microstructure...... and composition and mechanical properties was discussed. Flat, crack-free, and relatively high-density gradient components were obtained from this work. Compared to monolithic alumina ceramic, the remarkable improvement on fracture toughness and fracture energy of the investigated graded material system......In the present work, five-layered alumina–iron functionally graded materials (FGMs) were fabricated via a simple route of die pressing and pressureless sintering. The shrinkage differences among the layers in the FGM were minimized by particle size selection and processing control...

Designing robust alumina nanowires-on-nanopores structures: superhydrophobic surfaces with slippery or sticky water adhesion.

Science.gov (United States)

Peng, Shan; Tian, Dong; Miao, Xinrui; Yang, Xiaojun; Deng, Wenli

2013-11-01

Hierarchical alumina surfaces with different morphologies were fabricated by a simple one-step anodization method. These alumina films were fabricated by a new raw material: silica gel plate (aluminum foil with a low purity of 97.17%). The modulation of anodizing time enabled the formation of nanowires-on-nanopores hybrid nanostructures having controllable nanowires topographies through a self-assembly process. The resultant structures were demonstrated to be able to achieve superhydrophobicity without any hydrophobic coating layer. More interestingly, it is found that the as-prepared superhydrophobic alumina surfaces exhibited high contrast water adhesion. Hierarchical alumina film with nanowire bunches-on-nanopores (WBOP) morphology presents extremely slippery property which can obtain a sliding angle (SA) as low as 1°, nanowire pyramids-on-nanopores (WPOP) structure shows strongly sticky water adhesion with the adhesive ability to support 15 μL inverted water droplet at most. The obtained superhydrophobic alumina surfaces show remarkable mechanical durability even treated by crimping or pressing without impact on the water-repellent performance. Moreover, the created surfaces also show excellent resistivity to ice water, boiling water, high temperature, organic solvent and oil contamination, which could expand their usefulness and efficacy in harsh conditions. Copyright © 2013 Elsevier Inc. All rights reserved.

Feasibility of X-ray analysis of multi-layer thin films at a single beam voltage

International Nuclear Information System (INIS)

Statham, P J

2010-01-01

Multi-layer analysis using electron beam excitation and X-ray spectrometry is a powerful tool for characterising layers down to 1 nm thickness and with typically 1 μm lateral resolution but does not always work. Most published applications have used WDS with many measurements at different beam voltages and considerable experience has been needed to choose lines and voltages particularly for complex multi-layer problems. A new objective mathematical approach is described which demonstrates whether X-ray analysis can obtain reliable results for an arbitrary multi-layer problem. A new algorithm embodied in 'ThinFilmID' software produces a single plot that shows feasibility of achieving results with a single EDS spectrum and suggests the optimal beam voltage. Synthesis of EDS spectra allows the precision in results to be estimated and acquisition conditions modified before wasting valuable instrument time. Thus, practicality of multi-layer thin film analysis at a single beam voltage can now be established without the extensive experimentation that was previously required by a microanalysis expert. Examples are shown where the algorithm discovers viable single-voltage conditions for applications that experts previously thought could only be addressed using measurements at more than one beam voltage.

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Redox process at solid-liquid interfaces: studies with thin layers of green rusts electrodeposited on inert substrates

International Nuclear Information System (INIS)

Peulon, S.; Taghdai, Y.; Mercier, F.; Barre, N.; Legrand, L.; Chauss, A.

2005-01-01

Full text of publication follows: The redox reactions which can occur between radioelements and natural phases in the environment are taken still little into account although their importance is established on natural sites; the consequences are significant since they can modify radically the behaviour of the species by increasing or decreasing their migration. The iron compounds are very implicated in these redox processes because iron is one of the most abundant element on earth; moreover, it is also present in the containers used for the storage of the nuclear waste. We exhibited in previous works that electrochemistry is a convenient way to generate the main iron oxidation compounds as thin layers on different inert substrates. The electrochemical behaviour of these deposits that are adherent, homogeneous and well crystallized [1-3], was investigated with the principle advantage that iron metal and its reactivity is eliminate. Moreover, they could be analysed directly by techniques like IRRAS, XRD, SEM, EDS and XPS without any preparation. In the present study, we develop an original way to investigate redox processes at solid-liquid interfaces based on the utilisation of these thin layers; the samples are more commonly powders and/or pieces of corroded steel in the literature. Results obtained with two different systems, chromate and uranyl ions, in interaction with thin layers of sulfated green rusts are presented. Green rusts is chosen because it is a mixed Fe(II-III) compound which could be formed in anoxic conditions like in the case of the storage of the nuclear waste. After various contact times with the solutions containing the reactive species, the thin layers are characterised by different ex-situ methods. The results show clearly the oxidation of the green rust into a Fe(III) compound and the formation of a new solid phase on the electrode due to the reduction and the precipitation of the reactive species present initially in solution. Because thin

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

OpenAIRE

Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

2016-01-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates

International Nuclear Information System (INIS)

Maschmann, Matthew R; Franklin, Aaron D; Amama, Placidus B; Zakharov, Dmitri N; Stach, Eric A; Sands, Timothy D; Fisher, Timothy S

2006-01-01

Vertical single-walled and double-walled carbon nanotube (SWNT and DWNT) arrays have been grown using a catalyst embedded within the pore walls of a porous anodic alumina (PAA) template. The initial film structure consisted of a SiO x adhesion layer, a Ti layer, a bottom Al layer, a Fe layer, and a top Al layer deposited on a Si wafer. The Al and Fe layers were subsequently anodized to create a vertically oriented pore structure through the film stack. CNTs were synthesized from the catalyst layer by plasma-enhanced chemical vapour deposition (PECVD). The resulting structure is expected to form the basis for development of vertically oriented CNT-based electronics and sensors

A reversed-phase compatible thin-layer chromatography autography for the detection of acetylcholinesterase inhibitors.

Science.gov (United States)

Ramallo, I Ayelen; García, Paula; Furlan, Ricardo L E

2015-11-01

A dual readout autographic assay to detect acetylcholinesterase inhibitors present in complex matrices adsorbed on reversed-phase or normal-phase thin-layer chromatography plates is described. Enzyme gel entrapment with an amphiphilic copolymer was used for assay development. The effects of substrate and enzyme concentrations, pH, incubation time, and incubation temperature on the sensitivity and the detection limit of the assay were evaluated. Experimental design and response surface methodology were used to optimize conditions with a minimum number of experiments. The assay allowed the detection of 0.01% w/w of physostigmine in both a spiked Sonchus oleraceus L. extract chromatographed on normal phase and a spiked Pimenta racemosa (Mill.) J.W. Moore leaf essential oil chromatographed on reversed phase. Finally, the reversed-phase thin-layer chromatography assay was applied to reveal the presence of an inhibitor in the Cymbopogon citratus (DC.) Stapf essential oil. The developed assay is able to detect acetylcholinesterase inhibitors present in complex matrixes that were chromatographed in normal phase or reversed-phase thin-layer chromatography. The detection limit for physostigmine on both normal and reversed phase was of 1×10(-4) μg. The results can be read by a change in color and/or a change in fluorescence. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenggong; Wang, Congcong; Kauppi, John [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Liu, Xiaoliang [Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China); Gao, Yongli, E-mail: ygao@pas.rochester.edu [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China)

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Thin-layer boilover in diesel-oil fires: Determining the increase of thermal hazards and safety distances

International Nuclear Information System (INIS)

Ferrero, Fabio; Munoz, Miguel; Arnaldos, Josep

2007-01-01

A study of the effects of thin-layer boilover on large hydrocarbon fires was carried out. In the experiments, diesel-oil was burned in pools with diameters ranging from 1.5 to 6 m. Previous models used to predict emissive power during the stationary state were analysed and successively modified in order to accurately predict thermal hazard during the water ebullition phase. It was discovered that the increase in emissive power during thin-layer boilover is greater when the pool diameter is smaller. Furthermore, the required increases in safety distances in the case of accidents involving this dangerous phenomenon are provided

Control of porosity in alumina for catalytic purposes - a review; Controle de porosidade em aluminas para fins cataliticos - uma revisao

Energy Technology Data Exchange (ETDEWEB)

Moure, Gustavo Torres [PETROBRAS, Rio de Janeiro, RJ (Brazil). Centro de Pesquisas (CENPES). Setor de Tecnologia de Hidrorrefino, Lubrificantes e Parafinas; Morgado Junior, Edisson [PETROBRAS, Rio de Janeiro, RJ (Brazil). Centro de Pesquisas (CENPES). Setor de Tecnologia de Craqueamento Catalitico; Figueiredo, Cecilia Maria C.

1999-12-01

In recent years, the Alumina Group, of the Catalysts Division of CENPES, has dedicated research to develop and characterize alumina for the catalytic processes of interest to PETROBRAS. Control of the texture of the alumina and, consequently, the alumina based catalysts, is crucially important to their adequacy and performance. Knowledge of the porosity formation mechanisms in alumina was fundamental for the development of catalysts to satisfy the demand from PETROBRAS. This comprises the scope of this review. (author)

White emission from organic light-emitting diodes with a super-thin BCP layer

International Nuclear Information System (INIS)

Hao Jingang; Deng Zhenbo; Yang Shengyi

2007-01-01

We report a method to achieve white emission from organic light-emitting diodes (OLEDs) in which a super-thin (3 nm) hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), was inserted between electron-transport layer 8-hydroxyquinoline aluminum (Alq 3 ) and 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped poly-vinlycarbazole (PVK) layer. The BCP layer can not only confine exciton in the emitting layer but also control energy transfer proportion from PVK to Alq 3 and then from Alq 3 to DCJTB through BCP layer. In this way, pure white emission with CIE coordinate of (0.32, 0.32) was obtained and it was voltage independent. The brightness reached 270 cd/m 2 at 18 V with an efficiency of 0.166 cd/A

Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

International Nuclear Information System (INIS)

Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

2016-01-01

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

Investigation of Processes and Factors Regulating the Generation, Maintenance and Breakdown of Bioluminescent Thin Layers

National Research Council Canada - National Science Library

Widder, Edith

2001-01-01

.... Katz's submersible holographic camera mounted on the upper work platform. Thin layers were located using real-time sensor feedback from intensified video recordings of stimulated bioluminescence...

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

Science.gov (United States)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Mathematical modelling of the thin layer solar drying of banana, mango and cassava

Energy Technology Data Exchange (ETDEWEB)

Koua, Kamenan Blaise; Fassinou, Wanignon Ferdinand; Toure, Siaka [Laboratoire d' Energie Solaire, Universite de Cocody- Abidjan, 22 BP 582 Abidjan 22 (Ivory Coast); Gbaha, Prosper [Laboratoire d' Energie Nouvelle et Renouvelable, Institut National Polytechnique, Felix HOUPHOUET - BOIGNY de Yamoussoukro (Ivory Coast)

2009-10-15

The main objectives of this paper are firstly to investigate the behaviour of the thin layer drying of plantain banana, mango and cassava experimentally in a direct solar dryer and secondly to perform mathematical modelling by using thin layer drying models encountered in literature. The variation of the moisture content of the products studied and principal drying parameters are analysed. Seven statistical models, which are empirical or semi-empirical, are tested to validate the experimental data. A non-linear regression analysis using a statistical computer program is used to evaluate the constants of the models. The Henderson and Pabis drying model is found to be the most suitable for describing the solar drying curves of plantain banana, mango and cassava. The drying data of these products have been analysed to obtain the values of the effective diffusivity during the falling drying rate phase. (author)

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

Science.gov (United States)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

International Nuclear Information System (INIS)

Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

2013-01-01

An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Auger electron spectroscopy study on interaction between aluminum thin layers and uranium substrate

International Nuclear Information System (INIS)

Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong; Jiang Chunli; Lu Lei

2005-01-01

Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber (VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl x maybe formed at interface. (authors)

Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

Science.gov (United States)

Böttger, U.; Waser, R.

2017-07-01

The existence of non-ferroelectric regions in ferroelectric thin films evokes depolarization effects leading to a tilt of the P(E) hysteresis loop. The analysis of measured hysteresis of lead zirconate titanate (PZT) thin films is used to determine a depolarization factor which contains quantitative information about interfacial layers as well as ferroelectrically passive zones in the bulk. The derived interfacial capacitance is smaller than that estimated from conventional extrapolation techniques. In addition, the concept of depolarization is used for the investigation of fatigue behavior of PZT thin films indicating that the mechanism of seed inhibition, which is responsible for the effect, occurs in the entire film.

Microstructural and Optical Properties of Porous Alumina Elaborated on Glass Substrate

Science.gov (United States)

Zaghdoudi, W.; Gaidi, M.; Chtourou, R.

2013-03-01

A transparent porous anodized aluminum oxide (AAO) nanostructure was formed on a glass substrate using the anodization of a highly pure evaporated aluminum layer. A parametric study was carried out in order to achieve a fine control of the microstructural and optical properties of the elaborated films. The microstructural and surface morphologies of the porous alumina films were characterized by x-ray diffraction and atomic force microscopy. Pore diameter, inter-pore separation, and the porous structure as a function of anodization conditions were investigated. It was then found that the pores density decreases with increasing the anodization time. Regular cylindrical porous AAO films with a flat bottom structure were formed by chemical etching and anodization. A high transmittance in the 300-900 nm range is reported, indicating a fulfilled growth of the transparent sample (alumina) from the aluminum metal. The data showed typical interference oscillations as a result of the transparent characteristics of the film throughout the visible spectral range. The thickness and the optical constants ( n and k) of the porous anodic alumina films, as a function of anodizing time, were obtained using spectroscopic ellipsometry in the ultraviolet-visible-near infrared (UV-vis-NIR) regions.

Electron-irradiation-induced phase transformation in alumina

International Nuclear Information System (INIS)

Chen, C.L.; Arakawa, K.; Lee, J.-G.; Mori, H.

2010-01-01

In this study, electron-irradiation-induced phase transformations between alumina polymorphs were investigated by high-resolution transmission electron microscopy. It was found that the electron-irradiation-induced α → κ' phase transformation occurred in the alumina under 100 keV electron irradiation. It is likely that the knock-on collision between incident electrons and Al 3+ cations is responsible for the occurrence of electron-irradiation-induced phase transformation from α-alumina to κ'-alumina.

Experimentqal and analytical study on thermocracking of alumina ceramic ring in a mechanical seal

Science.gov (United States)

Komiya, M.; Matsuda, K.; Kaneta, M.

1994-04-01

A mechanism of thermocracking, which occurs in an alumina ceramic ring of a mechanical face seal, is proposed based on experimental and analytical results. Methods for its prevention are also discussed. The experiments were conducted using an external type mechanical face seal composed of a carbon ring and three kinds of alumina ceramic rings, with distilled water as the liquid to be sealed. By using a layer of gold vacuum deposited onto the surface of the ceramic ring as a part of a DC circuit, the moment of crack initiation was identified. The thermal stresses produced in the ceramic ring by frictional heating were calculated using finite element analysis.

Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

NARCIS (Netherlands)

De Hoop, A.T.; Jiang, L.

2009-01-01

The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

Transport properties of alumina nanofluids

International Nuclear Information System (INIS)

Wong, Kau-Fui Vincent; Kurma, Tarun

2008-01-01

Recent studies have showed that nanofluids have significantly greater thermal conductivity compared to their base fluids. Large surface area to volume ratio and certain effects of Brownian motion of nanoparticles are believed to be the main factors for the significant increase in the thermal conductivity of nanofluids. In this paper all three transport properties, namely thermal conductivity, electrical conductivity and viscosity, were studied for alumina nanofluid (aluminum oxide nanoparticles in water). Experiments were performed both as a function of volumetric concentration (3-8%) and temperature (2-50 deg. C). Alumina nanoparticles with a mean diameter of 36 nm were dispersed in water. The effect of particle size was not studied. The transient hot wire method as described by Nagaska and Nagashima for electrically conducting fluids was used to test the thermal conductivity. In this work, an insulated platinum wire of 0.003 inch diameter was used. Initial calibration was performed using de-ionized water and the resulting data was within 2.5% of standard thermal conductivity values for water. The thermal conductivity of alumina nanofluid increased with both increase in temperature and concentration. A maximum thermal conductivity of 0.7351 W m -1 K -1 was recorded for an 8.47% volume concentration of alumina nanoparticles at 46.6 deg. C. The effective thermal conductivity at this concentration and temperature was observed to be 1.1501, which translates to an increase in thermal conductivity by 22% when compared to water at room temperature. Alumina being a good conductor of electricity, alumina nanofluid displays an increasing trend in electrical conductivity as volumetric concentration increases. A microprocessor-based conductivity/TDS meter was used to perform the electrical conductivity experiments. After carefully calibrating the conductivity meter's glass probe with platinum tip, using a standard potassium chloride solution, readings were taken at various

Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

International Nuclear Information System (INIS)

Choi, Yuri; Kim, Gun Hee; Jeong, Woong Hee; Kim, Hyun Jae; Chin, Byung Doo; Yu, Jae-Woong

2010-01-01

Characteristics of oxide semiconductor thin film transistor prepared by gravure printing technique were studied. This device had inverted staggered structure of glass substrate/MoW/SiNx/ printed active layer. The active layer was printed with precursor of indium gallium zinc oxide solution and then annealed at 550 o C for 2 h. Influences of printing parameters (i.e. speed and force) were studied. As the gravure printing force was increased, the thickness of printed film was decreased and the refractive index of printed active layer was increased. The best printed result in our study was obtained with printing speed of 0.4 m/s, printing force of 400 N and the thickness of printed active layer was 45 nm. According to AFM image, surface of printed active layer was quite smooth and the root-mean square roughness was approximately 0.5 nm. Gravure printed active layer had a field-effect mobility of 0.81 cm 2 /Vs and an on-off current ratio was 1.36 x 10 6 .

A chip-type thin-layer electrochemical cell coupled with capillary electrophoresis for online separation of electrode reaction products

Energy Technology Data Exchange (ETDEWEB)

He, Jian-Bo, E-mail: jbhe@hfut.edu.cn; Cui, Ting; Zhang, Wen-Wen; Deng, Ning

2013-07-05

Graphical abstract: -- Highlights: •A new coupling of thin-layer electrolysis with capillary electrophoresis (CE). •Rapid electrolysis, direct sampling followed by online CE separation. •At least 13 products of quercetin oxidation were separated. •Thermodynamic and kinetic parameters were determined from CE peak areas. -- Abstract: A coupling technique of thin-layer electrolysis with high-performance capillary electrophoresis/UV–vis technique(EC/HPCE/UV–vis) is developed for online separation and determination of electrode reaction products. A chip-type thin-layer electrolytic (CTE) cell was designed and fabricated, which contains a capillary channel and a background electrolyte reservoir, allowing rapid electrolysis, direct sampling and online electrophoretic separation. This chip-type setup was characterized based on an electrophoresis expression of Nernst equation that was applied to the redox equilibrium of o-tolidine at different potentials. The utility of the method was demonstrated by separating and determining the electro-oxidation products of quercetin in different pH media. Two main products were always found in the studied time, potential and pH ranges. The variety of products increased not only with increasing potential but also with increasing pH value, and in total, at least 13 products were observed in the electropherograms. This work illustrates a novel example of capillary electrophoresis used online with thin-layer electrolysis to separate and detect electrode reaction products.

A chip-type thin-layer electrochemical cell coupled with capillary electrophoresis for online separation of electrode reaction products

International Nuclear Information System (INIS)

He, Jian-Bo; Cui, Ting; Zhang, Wen-Wen; Deng, Ning

2013-01-01

Graphical abstract: -- Highlights: •A new coupling of thin-layer electrolysis with capillary electrophoresis (CE). •Rapid electrolysis, direct sampling followed by online CE separation. •At least 13 products of quercetin oxidation were separated. •Thermodynamic and kinetic parameters were determined from CE peak areas. -- Abstract: A coupling technique of thin-layer electrolysis with high-performance capillary electrophoresis/UV–vis technique(EC/HPCE/UV–vis) is developed for online separation and determination of electrode reaction products. A chip-type thin-layer electrolytic (CTE) cell was designed and fabricated, which contains a capillary channel and a background electrolyte reservoir, allowing rapid electrolysis, direct sampling and online electrophoretic separation. This chip-type setup was characterized based on an electrophoresis expression of Nernst equation that was applied to the redox equilibrium of o-tolidine at different potentials. The utility of the method was demonstrated by separating and determining the electro-oxidation products of quercetin in different pH media. Two main products were always found in the studied time, potential and pH ranges. The variety of products increased not only with increasing potential but also with increasing pH value, and in total, at least 13 products were observed in the electropherograms. This work illustrates a novel example of capillary electrophoresis used online with thin-layer electrolysis to separate and detect electrode reaction products

White emission from organic light-emitting diodes with a super-thin BCP layer

Energy Technology Data Exchange (ETDEWEB)

Hao Jingang [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Deng Zhenbo [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: zbdeng@center.njtu.edu.cn; Yang Shengyi [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

2007-01-15

We report a method to achieve white emission from organic light-emitting diodes (OLEDs) in which a super-thin (3 nm) hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), was inserted between electron-transport layer 8-hydroxyquinoline aluminum (Alq{sub 3}) and 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped poly-vinlycarbazole (PVK) layer. The BCP layer can not only confine exciton in the emitting layer but also control energy transfer proportion from PVK to Alq{sub 3} and then from Alq{sub 3} to DCJTB through BCP layer. In this way, pure white emission with CIE coordinate of (0.32, 0.32) was obtained and it was voltage independent. The brightness reached 270 cd/m{sup 2} at 18 V with an efficiency of 0.166 cd/A.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer; Caracterizacao e obtencao de filmes finos de N,N,N-trimetil quitosana e heparina atraves da tecnica layer-by-layer

Energy Technology Data Exchange (ETDEWEB)

NONE

2011-07-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through {sup 1}H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

Institute of Scientific and Technical Information of China (English)