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Sample records for thick films grown

  1. Thickness dependence of Hall mobility of HWE grown PbTe films

    International Nuclear Information System (INIS)

    Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

    1985-01-01

    Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

  2. Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0 0 0 1)

    International Nuclear Information System (INIS)

    Xu Gang; Jin Ping; Tazawa, Masato; Yoshimura, Kazuki

    2005-01-01

    Vanadium dioxide (VO 2 ) films were epitaxially grown on α-Al 2 O 3 (0 0 0 1) by rf reactive magnetron sputtering. The effects of film thickness ranging from 3 to 150 nm on optical properties were investigated. It revealed that the semiconductor--metal phase transition temperature considerably decreases as film thickness decreases, in particular for the film with thickness less than 10 nm. On the other hand, we found that the difference in visible transmittance between the two phases of VO 2 also varies with film thickness. For the films with thickness less than 50 nm, the semiconductor phase exhibits lower visible transmittance than its metallic phase, while for those with thickness larger than 50 nm the situation is reversed

  3. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    International Nuclear Information System (INIS)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-01-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO 3 film grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness

  4. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  5. Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

    2009-01-07

    This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

  6. Photoluminescence investigation of thick GaN films grown on Si substrates by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Yang, M.; Ahn, H. S.; Chang, J. H.; Yi, S. N.; Kim, K. H.; Kim, H.; Kim, S. W.

    2003-01-01

    The optical properties of thick GaN films grown by hydried vapor phase epitaxy (HVPE) using a low-temperature intermediate GaN buffer layer grown on a (111) Si substrate with a ZnO thin film were investigated by using photoluminescence (PL) measurement at 300 K and 77 K. The strong donor bound exciton (DBE) at 357 nm with a full width at half maximum (FWHM) of 15 meV was observed at 77 K. The value of 15 meV is extremely narrow for GaN grown on Si substrate by HVPE. An impurity-related peak was also observed at 367 nm. The origin of impurity was investigated using Auger spectroscopy.

  7. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  8. Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

    Science.gov (United States)

    Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

    2017-11-01

    Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

  9. Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

    Science.gov (United States)

    Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

    2017-12-01

    Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

  10. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    CERN Document Server

    Kim, U J; Kim, Y C; Han, S K; Kang, K Y

    1999-01-01

    Thick films of the YBa sub 2 Cu sub 3 O subgamma sub - subdelta (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density J sub c sub g sup m sup a sup g was about 10 sup 5 A/cm sup 2 at 77 K in a weak field, and the transport J sub c sup t sup r sup a sup n sup s was about 365 A/cm sup 2 at 77 K. We calculated the intergranular magnetic critical current J sub c sub J sup m sup a sup g and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm sup 2 at 77 K and 2.02 eV, respectively.

  11. Thickness and photocatalytic activity relation in TiO2:N films grown ...

    Indian Academy of Sciences (India)

    2017-09-15

    Sep 15, 2017 ... microscope SPM Solver NEXT NT-MDT in tapping mode. ... Figure 1 presents the images obtained by AFM for 200 and. 500 ALD cycles. ..... [26] Suntola T and Antson J 1977 Method for producing compound thin films Patent ...

  12. Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

    2017-03-15

    The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

  13. Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; No, Young Soo; Kim, Su Youn; Cho, Woon Jo; Kwack, Kae Dal; Kim, Tae Whan

    2011-01-01

    Research highlights: The CuAlO 2 /Ag/CuAlO 2 multilayer films were grown on glass substrates using radio-frequency magnetron sputtering at room temperature. Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. The morphology Ag films with a thickness of 8 nm was uniform. The morphology of the Ag films inserted in the CuAlO 2 films significantly affected the optical transmittance and the resistivity of the CuAlO 2 films deposited on glass substrates. The maximum transmittance of the CuAlO 2 /Ag/CuAlO 2 multilayer films with a thickness of 8 nm was 89.16%. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films with an Ag film thickness of 18 nm was as small as about 2.8 x 10 -5 Ω cm. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films was decreased as a result of the thermal annealing treatment. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as TCO films in solar cells. - Abstract: Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. The resistivity of the 40 nm-CuAlO 2 /18 nm-Ag/40 nm-CuAlO 2 multilayer films was 2.8 x 10 -5 Ω cm, and the transmittance of the multilayer films with an Ag film thickness of 8 nm was approximately 89.16%. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as

  14. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    International Nuclear Information System (INIS)

    Biegalski, M. D.; Trolier-McKinstry, S.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Nelson, C. T.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.

    2008-01-01

    Strained epitaxial SrTiO 3 films were grown on orthorhombic (101) DyScO 3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 A were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 A. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 deg.). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 deg. C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO 3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films

  15. Critical thickness of high structural quality SrTiO{sub 3} films grown on orthorhombic (101) DyScO{sub 3}.

    Energy Technology Data Exchange (ETDEWEB)

    Biegalski, M. D.; Trolier-McKinstry, S.; Nelson, C. T.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.; Pennsylvania State Univ.; Forschungszentrum Julich; Univ. Michigan; LANL; Max-Born-Strabe

    2008-12-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  16. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Jabri, S., E-mail: slaheddine.jabri@fst.rnu.tn [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Amiri, G.; Sallet, V. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Souissi, A. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammammlif 2050 (Tunisia); Meftah, A. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Galtier, P. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Oueslati, M. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia)

    2016-05-15

    ZnSe layers were grown on ZnO substrates by the metal organic chemical vapor deposition technique. A new structure appeared at lower thicknesses films. The structural properties of the thin films were studied by the X-ray diffraction (XRD) and Raman spectroscopy methods. First, Raman selection rules are explicitly put forward from a theoretical viewpoint. Second, experimentally-retrieved-intensities of the Raman signal as a function of polarization angle of incident light are fitted to the obtained theoretical dependencies in order to confirm the crystallographic planes of zinc blend ZnSe thin film, and correlate with DRX measurements. Raman spectroscopy has been used to characterize the interfacial disorder that affects energy transport phenomena at ZnSe/ZnO interfaces and the Photoluminescence (PL) near the band edge of ZnSe thin films.

  17. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

    2015-07-06

    A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  18. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  19. Thick Bi2Sr2CaCu2O8+δ films grown by liquid-phase epitaxy for Josephson THz applications

    Science.gov (United States)

    Simsek, Y.; Vlasko-Vlasov, V.; Koshelev, A. E.; Benseman, T.; Hao, Y.; Kesgin, I.; Claus, H.; Pearson, J.; Kwok, W.-K.; Welp, U.

    2018-01-01

    Theoretical and experimental studies of intrinsic Josephson junctions (IJJs) that naturally occur in high-T c superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid-phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown μm thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650 × 150 μm2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature of underdamped IJJs, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.

  20. Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

    Science.gov (United States)

    Belkhedkar, M. R.; Ubale, A. U.

    2018-05-01

    Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

  1. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  2. Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

    International Nuclear Information System (INIS)

    Zhang Hongdi; An Yukai; Mai Zhenhong; Lu Huibin; Zhao Kun; Pan Guoqiang; Li Ruipeng; Fan Rong

    2008-01-01

    The thickness dependence of microstructures of La 0.9 Sr 0.1 MnO 3 (LSMO) thin films grown on exact-cut and miscut SrTiO 3 (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1] LSMO -parallel [0 0 1] EXACT-STO , and the LSMO films have a slight mosaic structure along the q x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24 deg. exists between [0 0 1] LSMO and [0 0 1] MISCUT-STO , and the LSMO films have a mosaic structure along the q z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly

  3. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

    Science.gov (United States)

    Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

    2018-04-01

    This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

  4. State of the art and prospective of large scale applications of YBCO thick films grown on metallic substrates

    International Nuclear Information System (INIS)

    Boffa, Vincenzo

    1997-09-01

    In the framework of the high temperature superconducting materials, YBa 2 Cu 3 O 7 (YBCO) shows very interesting intrinsic superconducting transport properties at temperature higher than the liquid nitrogen temperature. These properties are very important in large scale applications: transport of energy, magnets, transformers, etc. Unfortunately the potential of this material cannot be achieved today, since it is very difficult to manufacture YBCO based tapes or cables. In the last years several groups have tried to overcome the problems with new fabrication techniques. In the present report the state of the art and the prospective in the field of YBCO film fabrication on metallic substrates are presented

  5. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus, E-mail: yakaltun@erzincan.edu.tr

    2015-11-02

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m{sub e}{sup ⁎}/m{sub o}) and static and frequency dielectric constants (ε{sub o}, ε{sub ∞}) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  6. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    International Nuclear Information System (INIS)

    Akaltun, Yunus

    2015-01-01

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m_e"⁎/m_o) and static and frequency dielectric constants (ε_o, ε_∞) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  7. Model, prediction, and experimental verification of composition and thickness in continuous spread thin film combinatorial libraries grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Bassim, N. D.; Schenck, P. K.; Otani, M.; Oguchi, H.

    2007-01-01

    Pulsed laser deposition was used to grow continuous spread thin film libraries of continuously varying composition as a function of position on a substrate. The thickness of each component that contributes to a library can be empirically modeled to a bimodal cosine power distribution. We deposited ternary continuous spread thin film libraries from Al 2 O 3 , HfO 2 , and Y 2 O 3 targets, at two different background pressures of O 2 : 1.3 and 13.3 Pa. Prior to library deposition, we deposited single component calibration films at both pressures in order to measure and fit the thickness distribution. Following the deposition and fitting of the single component films, we predict both the compositional coverage and the thickness of the libraries. Then, we map the thickness of the continuous spread libraries using spectroscopic reflectometry and measure the composition of the libraries as a function of position using mapping wavelength-dispersive spectrometry (WDS). We then compare the compositional coverage of the libraries and observe that compositional coverage is enhanced in the case of 13.3 Pa library. Our models demonstrate linear correlation coefficients of 0.98 for 1.3 Pa and 0.98 for 13.3 Pa with the WDS

  8. X-ray diffraction measurement of residual stress in sol-gel grown lead zirconate titanate thick films on nickel-based super alloy substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hoshyarmanesh, Hamidreza; Nehzat, Naser; Salehi, Mehdi [Isfahan University of Technology, Isfahan (Iran, Islamic Republic of); Ghodsi, Mojtaba [Sultan Qaboos University, Muscat (Oman)

    2015-02-15

    Residual compressive stress of Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thick films was investigated using residual strains derived from X-ray diffraction patterns. Sin{sup 2}ψ method was applied for the 5, 10 and 15 μm sol-gel derived thick films annealed at 700 .deg. C for 1 hr as high frequency structural health monitoring square-shape transducers of 10 x10 mm, deposited onto the curved nickel-based super alloy substrates. A triaxial model was proposed based on piezoelectric constitutive equations, and Bragg's law at a large diffraction angle (∼89°) was utilized considering the electromechanical coupling factor as well as elastic, dielectric and piezoelectric constants. Thickness variations led to a significant change in residual stress magnitudes delineated from more-accurate triaxial model compared to small angle plane-stress results not considering the piezoelectric coupling effects.

  9. Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Koidis, Christos; Logothetidis, Stergios; Kassavetis, Spiridon; Laskarakis, Argiris [Lab for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Hastas, Nikolaos A.; Valassiades, Odisseas [Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2010-07-15

    The properties of Al-doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real-time spectroscopic ellipsometry (1.5-6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X-ray diffraction technique under grazing-incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

    Science.gov (United States)

    Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

    2018-05-01

    AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

  11. Thickness dependence of the strain, band gap and transport properties of epitaxial In{sub 2}O{sub 3} thin films grown on Y-stabilised ZrO{sub 2}(111)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, K H L; Oropeza, F E; Egdell, R G [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA (United Kingdom); Lazarov, V K [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Veal, T D; McConville, C F [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Walsh, A, E-mail: Russell.egdell@chem.ox.ac.uk [Department of Chemistry, Kathleen Lonsdale Materials Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2011-08-24

    Epitaxial films of In{sub 2}O{sub 3} have been grown on Y-stabilised ZrO{sub 2}(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm{sup 2} V{sup -1} s{sup -1}. The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

  12. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  13. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  14. Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures

    International Nuclear Information System (INIS)

    Kim, Jihoon; Song, Jaewon; Kwon, Ohsung; Kim, Sungkeun; Hwang, Cheol Seong; Park, Sang-Hee'Ko; Yun, Sun Jin; Jeong, Jaehack; Hyun, Kwang Soo

    2002-01-01

    The electrical conduction properties of 10-nm-thick atomic-layer deposited Al 2 O 3 thin films with Al bottom and Pt top electrodes were characterized for use in field emission display. The as-deposited films, grown at 300 deg. C, exhibited such a high electrical leakage that their electrical properties could not be measured. However, post-treatment at 300 deg. C under a remote O 2 or H 2 O plasma for 30 min improved the insulating properties of the Al 2 O 3 films. However, the electrical conduction mechanism, particularly in the high field (>4 MV/cm) was not Fowler-Nordheim (F-N) tunneling but was influenced by space charge limited conduction implying that there were many traps inside the dielectric film or the electrode interfaces. Postannealing of the top electrode at 300 deg. C in an oxygen atmosphere resulted in a F-N conduction mechanism by removing the interfacial traps. The calculated barrier height at the Al/Al 2 O 3 interface from the F-N fitting of the current density versus voltage curves using the electron effective mass (m * ) of 0.5 m 0 was approximately 2.0 eV

  15. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  16. Equilibrium helium film in the thick film limit

    International Nuclear Information System (INIS)

    Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

    2003-01-01

    For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

  17. Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

    Science.gov (United States)

    Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

    2018-04-01

    Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

  18. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  19. Film thickness determination by grazing incidence diffraction

    International Nuclear Information System (INIS)

    Battiston, G. A.; Gerbasi, R.

    1996-01-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

  20. Ultra-large current transport in thick SmBa{sub 2}Cu{sub 3}O{sub 7−x} films grown by reactive co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, G.; Jin, H.J. [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Jo, W., E-mail: wmjo@ewha.ac.kr [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Nam, D.H.; Cheong, H. [Department of Physics, Sogang University, Seoul 121-742 (Korea, Republic of); Kim, H.S.; Oh, S.S.; Ko, R.K.; Jo, Y.S.; Ha, D.W. [The Korea Electrotechnology Research Institute (KERI), Changwon 641-120 (Korea, Republic of)

    2015-06-15

    Highlights: • Transport properties of 5 μm thick SmBa{sub 2}Cu{sub 3}O{sub 7−x} thin films were investigated. • Laser scanning microscopy was used to demonstrate local transport properties. • Temperature variable laser scanning microscopy shows correlation between structural and transport properties. • Optical measurements described nature of current transport properties in the coated conductors. - Abstract: Structural and transport properties of high performance SmBa{sub 2}Cu{sub 3}O{sub 7−x} coated conductors produced by a dual-chamber co-evaporation are presented. The 5 μm-thick SmBCO coated conductors grown on IBAD-MgO based Hastelloy metal templates show critical currents larger than 1020–1560 A/cm at 77 K and self-field. The current transport characteristics of the conductors are investigated by room-temperature thermoelectric microscopy and low-temperature bolometric microscopy. The local thermoelectric images show the tilted grains, grain boundaries, and microstructural defects on the surface of the coated conductors. The bias current-dependent bolometric response at low temperature displays the current of the local flux flow dissipation as an increasing bias. Furthermore, we measured micro-Raman scattering microscopic imaging on oxygen-related peaks of the conductors. Comparing the Raman signal images with the low temperature optical scanning maps, it is remarkable that the structural disorders represented by oxygen-related Raman peaks are closely related to the low temperature bolometric abnormalities. From this result, a nature of the dissipative current distribution in coated conductors is revealed. The scanning optical microscopic study will provide a promising method for quality assurance of coated conductors.

  1. Fabrication of thick superconducting films by decantation

    Directory of Open Access Journals (Sweden)

    Julián Betancourt M.

    1991-07-01

    Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

  2. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  3. Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

    Science.gov (United States)

    Elovaara, Tomi; Huhtinen, Hannu; Majumdar, Sayani; Paturi, Petriina

    2016-09-01

    We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

  4. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    International Nuclear Information System (INIS)

    Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

  5. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

    International Nuclear Information System (INIS)

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-01-01

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  6. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    OpenAIRE

    Birkett, Martin; Penlington, Roger

    2016-01-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the ...

  7. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  8. The Thickness Dependence of Optical Constants of Ultrathin Iron Films

    International Nuclear Information System (INIS)

    Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

    2013-01-01

    Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

  9. Residual stress analysis in thick uranium films

    International Nuclear Information System (INIS)

    Hodge, A.M.; Foreman, R.J.; Gallegos, G.F.

    2005-01-01

    Residual stress analysis was performed on thick, 1-25 μm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0, -200, -300 V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses

  10. Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

    International Nuclear Information System (INIS)

    Breiland, W.G.; Lee, S.R.; Koleske, D.D.

    2004-01-01

    When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

  11. Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

    Science.gov (United States)

    Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

    2018-06-01

    The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

  12. Nano-Hydroxyapatite Thick Film Gas Sensors

    International Nuclear Information System (INIS)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

    2011-01-01

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  13. Percolation effect in thick film superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

    1994-12-31

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

  14. Percolation effect in thick film superconductors

    International Nuclear Information System (INIS)

    Sali, R.; Harsanyi, G.

    1994-01-01

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

  15. Europium and samarium doped calcium sulfide thin films grown by PLD

    International Nuclear Information System (INIS)

    Christoulakis, S.; Suchea, M; Katsarakis, N.; Koudoumas, E

    2007-01-01

    Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were prepared by the pulsed laser deposition technique using sintered targets. A typical homemade deposition chamber and XeCl excimer laser (308 nm) were employed and the films were deposited in helium atmosphere onto silicon and corning glass substrates. Structural investigations carried out by X-ray diffraction and atomic force microscopy showed a strong influence of the deposition parameters on the film properties. The films grown had an amorphous or polycrystalline structure depending on growth temperature and the number of pulses used, the same parameters affecting the film roughness, the grain shape and dimensions, the film thickness and the optical transmittance. This work indicates that pulsed laser deposition can be a suitable technique for the preparation of CaS:Eu,Sm thin films, the film characteristics being controlled by the growth conditions

  16. The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

    Science.gov (United States)

    Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

    2018-05-01

    We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

  17. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  18. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  19. Hexaferrite multiferroics: from bulk to thick films

    Science.gov (United States)

    Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

    2018-03-01

    We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

  20. State of the art and prospective of large scale applications of YBCO thick films grown on metallic substrates; Possibilita` applicative a larga scala dei film spessi di YBCO su substrati metallici: Stato dell`arte e prospettive

    Energy Technology Data Exchange (ETDEWEB)

    Boffa, Vincenzo [ENEA, Centro Ricerche Frascati, Rome (Italy). Dipt. Energia

    1997-09-01

    In the framework of the high temperature superconducting materials, YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) shows very interesting intrinsic superconducting transport properties at temperature higher than the liquid nitrogen temperature. These properties are very important in large scale applications: transport of energy, magnets, transformers, etc. Unfortunately the potential of this material cannot be achieved today, since it is very difficult to manufacture YBCO based tapes or cables. In the last years several groups have tried to overcome the problems with new fabrication techniques. In the present report the state of the art and the prospective in the field of YBCO film fabrication on metallic substrates are presented.

  1. Thick film heater for sensor application

    International Nuclear Information System (INIS)

    Milewski, J; Borecki, M; Kalenik, J; Król, K

    2014-01-01

    A thick film microheater was elaborated. The microheater is intended for fast heating of small volume samples under measurement in optical based system. Thermal analysis of microheater was carried out using finite element method (FEM) for heat transfer calculation as a function of time and space. A nodal heat transfer function was calculated in classical form including all basics mechanisms of heat exchange – heat conduction, convection and radiation were considered. Work focuses on the influence of some construction parameters (ex. length, thermal conductivity of substrate, substrate thickness) on microheater performance. The results show that application of thin substrate of low thermal conductivity and low thickness for miroheater construction and resistor of optimum dimensions leads to significant power consumption decrease and increase of overall optical measurement system performance.

  2. Thick-film analysis: literature search and bibliography

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

  3. Atomically flat platinum films grown on synthetic mica

    Science.gov (United States)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2018-04-01

    Atomically flat platinum thin films were heteroepitaxially grown on synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2] by van der Waals epitaxy. Platinum films deposited on a fluorophlogopite mica substrate by inductively coupled plasma-assisted sputtering with oxygen introduction on a synthetic mica substrate resulted in the growth of twin single-crystalline epitaxial Pt(111) films.

  4. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  5. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

    2016-02-21

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  6. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    International Nuclear Information System (INIS)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  7. Disorder in silicon films grown epitaxially at low temperature

    International Nuclear Information System (INIS)

    Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

    2003-01-01

    Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

  8. Single layer porous gold films grown at different temperatures

    International Nuclear Information System (INIS)

    Zhang Renyun; Hummelgard, Magnus; Olin, Hakan

    2010-01-01

    Large area porous gold films can be used in several areas including electrochemical electrodes, as an essential component in sensors, or as a conducting material in electronics. Here, we report on evaporation induced crystal growth of large area porous gold films at 20, 40 and 60 deg. C. The gold films were grown on liquid surface at 20 deg. C, while the films were grown on the wall of beakers when temperature increased to 40 and 60 deg. C. The porous gold films consisted of a dense network of gold nanowires as characterized by TEM and SEM. TEM diffraction results indicated that higher temperature formed larger crystallites of gold wires. An in situ TEM imaging of the coalescence of gold nanoparticles mimicked the process of the growth of these porous films, and a plotting of the coalescence time and the neck radius showed a diffusion process. The densities of these gold films were also characterized by transmittance, and the results showed film grown at 20 deg. C had the highest density, while the film grown at 60 deg. C had the lowest consistent with SEM and TEM characterization. Electrical measurements of these gold films showed that the most conductive films were the ones grown at 40 deg. C. The conductivities of the gold films were related to the amount of contamination, density and the diameter of the gold nanowires in the films. In addition, a gold film/gold nanoparticle hybrid was made, which showed a 10% decrease in transmittance during hybridization, pointing to applications as chemical and biological sensors.

  9. Electron beam curable polymer thick film

    International Nuclear Information System (INIS)

    Nagata, Hidetoshi; Kobayashi, Takashi

    1988-01-01

    Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

  10. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  11. Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

    Science.gov (United States)

    Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

    2012-04-01

    To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

  12. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  13. Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

    International Nuclear Information System (INIS)

    Lee, Sung Sik; Kim, Young H.

    2005-01-01

    In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

  14. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  15. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  16. Structure and magnetism of ultrathin Co and Fe films epitaxially grown on Pd/Cu(0 0 1)

    International Nuclear Information System (INIS)

    Lu, Y.F.; Przybylski, M.; Yan, L.; Barthel, J.; Meyerheim, H.L.; Kirschner, J.

    2005-01-01

    A contribution originating from the Co/Pd and Fe/Pd interfaces to the magneto-optical Kerr effect (MOKE) rotation is analyzed for Co and/or Fe films grown on a Pd-buffer-monolayer on Cu(0 0 1). A clear increase of the MOKE signal in comparison to the Co(Fe) films grown directly on Cu(0 0 1) is detected. An interpretation is supported by similar observations for Co films grown on Pd(1 1 0) and Pd(0 0 1). In particular, the sign reversal of the Kerr loops with increasing thickness of the Co(Fe) films is discussed. Magneto-optical effects are separated from the real magnetization and its dependence on the film thickness

  17. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    International Nuclear Information System (INIS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO 2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

  18. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  19. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  20. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  1. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

  2. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  3. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  4. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  5. Growth of BaTiO3-PVDF composite thick films by using aerosol deposition

    Science.gov (United States)

    Cho, Sung Hwan; Yoon, Young Joon

    2016-01-01

    Barium titanate (BaTiO3)-polyvinylidene fluoride (PVDF) composite thick films were grown by using aerosol deposition at room temperature with BaTiO3 and PVDF powders. To produce a uniform composition in ceramic and polymer composite films, which show a substantial difference in specific gravity, we used PVDF-coated BaTiO3 powders as the starting materials. An examination of the microstructure confirmed that the BaTiO3 were well distributed in the PVDF matrix in the form of a 0 - 3 compound. The crystallite size in the BaTiO3-PVDF composite thick films was 5 ˜ 50 times higher than that in pure BaTiO3 thick films. PVDF plays a role in suppressing the fragmentation of BaTiO3 powder during the aerosol deposition process and in controlling the relative permittivity.

  6. Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

    Directory of Open Access Journals (Sweden)

    Yen-Hua Chen

    2012-01-01

    Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

  7. Influence of processing parameters on PZT thick films

    International Nuclear Information System (INIS)

    Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

    2005-01-01

    We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

  8. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  9. Interferometric measurement of film thickness during bubble blowing

    Science.gov (United States)

    Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

    2017-06-01

    In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

  10. NdFeB thick films prepared by tape casting

    International Nuclear Information System (INIS)

    Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

    2003-01-01

    NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

  11. Measurement of the thickness of thin films by backscattered protons

    International Nuclear Information System (INIS)

    Samaniego, L.E.Q.

    1976-07-01

    The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

  12. Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

    Science.gov (United States)

    Singh, N.; Sharma, S.

    2018-04-01

    Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

  13. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Science.gov (United States)

    Yin, H.; Ziemann, P.

    2014-06-01

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  14. HoYbBIG epitaxial thick films used for Faraday rotator in the 1.55μm band

    International Nuclear Information System (INIS)

    Zhong, Z.W.; Xu, X.W.; Chong, T.C.; Yuan, S.N.; Li, M.H.; Zhang, G.Y.; Freeman, B.

    2005-01-01

    Ho 3-x-y Yb y Bi x Fe 5 O 12 (HoYbBIG) garnet thick films with Bi content of x=0.9-1.5 were prepared by the liquid phase epitaxy (LPE) method. Optical properties and magneto-optical properties were characterized. The LPE-grown HoYbBIG thick films exhibited large Faraday rotation coefficients up to 1540 o /cm at 1.55μm, and good wavelength and temperature stability

  15. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  16. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  17. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  18. High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

    International Nuclear Information System (INIS)

    Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

    1990-01-01

    The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

  19. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  20. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  1. Lateral Interactions in Monolayer Thick Mercury Films

    Science.gov (United States)

    Kime, Yolanda Jan

    An understanding of lateral adatom-adatom interactions is often an important part of understanding electronic structure and adsorption energetics in monolayer thick films. In this dissertation I use angle-resolved photoemission and thermal desorption spectroscopies to explore the relationship between the adatom-adatom interaction and other characteristics of the adlayer, such as electronic structure, defects, or coexistent structural phases in the adlayer. Since Hg binds weakly to many substrates, the lateral interactions are often a major contribution to the dynamics of the overlayer. Hg adlayer systems are thus ideal for probing lateral interactions. The electronic structures of Hg adlayers on Ag(100), Cu(100), and Cu_3Au(100) are studied with angle-resolved ultraviolet photoemission. The Hg atomic 5d_{5/2} electronic band is observed to split into two levels following adsorption onto some surfaces. The energetic splitting of the Hg 5d_{5/2} level is found to be directly correlated to the adlayer homogeneous strain energy. The existence of the split off level also depends on the order or disorder of the Hg adlayer. The energetics of Hg adsorption on Cu(100) are probed using thermal desorption spectroscopy. Two different ordered adlayer structures are observed for Hg adsorption on Cu(100) at 200 K. Under some adsorption conditions and over a range of exposures, the two phases are seen to coexist on the surface prior to the thermal desorption process. A phase transition from the more dense to the less dense phase is observed to occur during the thermal desorption process. Inherent differences in defect densities are responsible for the observed differences between lateral interactions measured previously with equilibrium (atom beam scattering) and as measured by the non-equilibrium (thermal desorption) technique reported here. Theoretical and experimental evidence for an indirect through-metal interaction between adatoms is also discussed. Although through

  2. QCM gas sensor characterization of ALD-grown very thin TiO2 films

    Science.gov (United States)

    Boyadjiev, S.; Georgieva, V.; Vergov, L.; Szilágyi, I. M.

    2018-03-01

    The paper presents a technology for preparation and characterization of titanium dioxide (TiO2) thin films suitable for gas sensor applications. Applying atomic layer deposition (ALD), very thin TiO2 films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The TiO2 thin films were grown using Ti(iOPr)4 and water as precursors. The surface of the films was observed by scanning electron microscopy (SEM), coupled with energy dispersive X-ray analysis (EDX) used for a composition study. The research was focused on the gas-sensing properties of the films. Films of 10-nm thickness were deposited on quartz resonators with Au electrodes and the QCMs were used to build highly sensitive gas sensors, which were tested for detecting NO2. Although very thin, these ALD-grown TiO2 films were sensitive to NO2 already at room temperature and could register as low concentrations as 50 ppm, while the sorption was fully reversible, and the sensors could be fully recovered. With the technology presented, the manufacturing of gas sensors is simple, fast and cost-effective, and suitable for energy-effective portable equipment for real-time environmental monitoring of NO2.

  3. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  4. Film-thickness and composition dependence of epitaxial thin-film PZT-based

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

    2013-01-01

    The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

  5. Screen printed nanosized ZnO thick film

    Indian Academy of Sciences (India)

    Unknown

    The ex- tracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. ... racterized and a thick film paste is prepared by adding suitable .... UV peak and a broad green emission which is usually.

  6. Textured YBCO films grown on wires: application to superconducting cables

    International Nuclear Information System (INIS)

    Dechoux, N; Jiménez, C; Chaudouët, P; Rapenne, L; Sarigiannidou, E; Robaut, F; Petit, S; Garaudée, S; Porcar, L; Soubeyroux, J L; Odier, P; Bruzek, C E; Decroux, M

    2012-01-01

    Efforts to fabricate superconducting wires made of YBa 2 Cu 3 O 7 (YBCO) on La 2 Zr 2 O 7 (LZO) buffered and biaxially textured Ni-5 at.%W (NiW) are described. Wires were manually shaped from LZO buffered NiW tapes. Different diameters were produced: 1.5, 2 and 3 mm. The wires were further covered with YBCO grown by metal organic chemical vapor deposition (MOCVD). We developed an original device in which the round substrate undergoes an alternated rotation of 180° around its axis in addition to a reel-to-reel translation. This new approach allows covering the whole circumference of the wire with a YBCO layer. This was confirmed by energy dispersive x-ray spectroscopy (EDX) analysis coupled to a scanning electron microscope (SEM). For all wire diameters, the YBCO layer thickness varied from 300 to 450 nm, and the cationic composition was respected. Electron backscattering diffraction (EBSD) measurements were performed directly on an as-deposited wire without surface preparation allowing the investigation of the crystalline quality of the film surface. Combining EBSD with XRD results we show that YBCO grows epitaxially on the LZO buffered NiW wires. For the first time, superconductive behaviors have been detected on round substrates in both the rolling and circular direction. J c reached 0.3 MA cm −2 as measured at 77 K by transport and third-harmonic detection. Those preliminary results confirm the effectiveness of the MOCVD for complex geometries, especially for YBCO deposition on small diameter wires. This approach opens huge perspectives for the elaboration of a new generation of YBCO-based round conductors. (paper)

  7. Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan

    2006-01-01

    The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS

  8. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

    Science.gov (United States)

    Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  9. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  10. Characterization and comparison of thermistor thick films. Topical report

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

  11. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

    2007-01-01

    machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

  12. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  13. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  14. Application of β plastic film thickness gauge in automatic production of agricultural film

    International Nuclear Information System (INIS)

    Liu Longzhi; Guo Juhao

    1996-01-01

    The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

  15. Investigation of in-pile grown corrosion films on zirconium-based alloys

    International Nuclear Information System (INIS)

    Gebhardt, O.; Hermann, A.; Bart, G.; Blank, H.; Ray, I.L.F.

    1996-01-01

    In-pile grown corrosion films on different fuel rod claddings (standard Zircaloy-4, extra low tin Zircaloy (ELS), and Zr2.5Nb) have been studied using a variety of experimental techniques. The aim of the investigations was to find out common features and differences between the corrosion layers grown on zirconium alloys having different composition. Methods applied were scanning and transmission electron microscopy (SEM, TEM), electrochemical impedance spectroscopy (EIS), and electrochemical anodization. The morphological differences have been observed between the specimens that could explain the irradiation enhancement of corrosion of Zircaloy-4. The features of the compact oxide close to the oxide/metal interface have been characterized by electrochemical methods. The relationship between the thickness of this protective oxide and the overall oxide thickness has been investigated by EIS. It was found that this relation is dependent on the location of the oxide along the fuel rod and on the corrosion rate

  16. Hydroxyapatite screen-printed thick films: optical and electrical properties

    International Nuclear Information System (INIS)

    Silva, C.C.; Rocha, H.H.B.; Freire, F.N.A.; Santos, M.R.P.; Saboia, K.D.A.; Goes, J.C.; Sombra, A.S.B.

    2005-01-01

    In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al 2 O 3 substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials

  17. Hydroxyapatite screen-printed thick films: optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Silva, C.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Freire, F.N.A. [Departamento de Quimica Orga-circumflex nica e Inorga-circumflex nica-UFC, Caixa Postal 6030, CEP 60455-760, Fortaleza, Ceara (Brazil); Santos, M.R.P. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Saboia, K.D.A. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Goes, J.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Sombra, A.S.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil)]. E-mail: sombra@fisica.ufc.br

    2005-07-15

    In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al{sub 2}O{sub 3} substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials.

  18. High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

    International Nuclear Information System (INIS)

    Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

    1991-01-01

    This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

  19. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  20. Temperature- and field-dependent critical currents in [(Bi,Pb)2Sr2Ca2Cu3Ox]0.07(La0.7Sr0.3MnO3)0.03 thick films grown on LaAlO3 substrates

    Science.gov (United States)

    Paredes, Omar; Morán, Oswaldo; Baca, Eval

    2013-01-01

    La0.7Sr0.3MnO3 (LSMO) nanoparticles were embedded in (Bi,Pb)2Sr2Ca2Cu3Ox (Bi2223) thick films, which were grown by simple melting-quenching-annealing (MQA) method on (001)-oriented LaAlO3 (LAO) substrates. The nominal composition of the composite-like hybrid system was (Bi2223)1-x(LSMO)x with x = 0.03. The constituent elements, Bi2223 and LSMO, were prepared separately by standard solid state reaction and Pechini's method, respectively. The analysis of the X-ray diffraction patterns suggested a polycrystalline growth mode of the thick films on the LAO substrates. From electric transport measurements, the superconducting onset temperature and the superconducting critical temperature (ρ = 0) ended up being 105 and 62 K, respectively. The flux pinning energy U was determined using the Anderson-Kim model. The value of U was compared with those obtained for similar samples with concentrations x = 0.01 and x = 0.05. Current-voltage characteristics were recorded at different temperatures in order to analyze the behavior of the superconducting current (Ic) of the films. A dramatic drop of Ic was observed at ˜20 K. This seems to be linked to the presence of flux creep acting as dissipation factors attributed to LSMO nanoparticles. Isothermal magnetization loops recorded at T Tc showed clear diamagnetic and ferromagnetic signals, which verify the multifunctional character of the system. Based on the isothermal M(H)-loops recorded at 5, 20, and 40 K and taking Kim's model into account, the dependence of superconducting current density (Jc), and the volume pinning force (Fp) on the magnetic field were calculated. The dependence Jc(B) at 5 K showed an exponential-type behavior, which is described by an empirical equation. This empirical equation considers the maximum value of Fp, which may be scaled with the Kramer's expression for Fp. From this scaling procedure, diverse exponents, associated with different pinning mechanisms, were determined. The drastic fall of Jc(B) at T

  1. Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

    Energy Technology Data Exchange (ETDEWEB)

    Basu, T.; Kumar, M.; Som, T., E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Nandy, S. [CENIMAT, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Caparica 2829 516 (Portugal); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Saini, C. P.; Kanjilal, A. [Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh 201 314 (India)

    2015-09-14

    Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

  2. Glue Film Thickness Measurements by Spectral Reflectance

    International Nuclear Information System (INIS)

    Marshall, B.R.

    2010-01-01

    Spectral reflectance was used to determine the thickness of thin glue layers in a study of the effect of the glue on radiance and reflectance measurements of shocked-tin substrates attached to lithium fluoride windows. Measurements based on profilometry of the components were found to be inaccurate due to flatness variations and deformation of the tin substrate under pressure during the gluing process. The accuracy of the spectral reflectance measurements were estimated to be ±0.5 (micro)m, which was sufficient to demonstrate a convincing correlation between glue thickness and shock-generated light.

  3. Glue Film Thickness Measurements by Spectral Reflectance

    Energy Technology Data Exchange (ETDEWEB)

    B. R. Marshall

    2010-09-20

    Spectral reflectance was used to determine the thickness of thin glue layers in a study of the effect of the glue on radiance and reflectance measurements of shocked-tin substrates attached to lithium fluoride windows. Measurements based on profilometry of the components were found to be inaccurate due to flatness variations and deformation of the tin substrate under pressure during the gluing process. The accuracy of the spectral reflectance measurements were estimated to be ±0.5 μm, which was sufficient to demonstrate a convincing correlation between glue thickness and shock-generated light.

  4. One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

    International Nuclear Information System (INIS)

    Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

    2006-01-01

    A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

  5. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  6. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  7. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  8. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

    International Nuclear Information System (INIS)

    Guillén, C; Herrero, J

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

  9. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  10. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Vinod, V.T.P.; Černík, Miroslav [Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17 (Czech Republic); Vishnuraj, R.; Arout Chelvane, J.; Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-01

    Sub-micron thick Sm–Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm{sub 4}Co{sub 96} and Sm{sub 8}Co{sub 92}. The structural and magnetic properties of Sm–Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm–Co films obtained with the Sm{sub 4}Co{sub 96} target exhibit Sm{sub 2}Co{sub 17} as a prominent phase; while the films produced with the Sm{sub 8}Co{sub 92} target show Sm{sub 2}Co{sub 7} as a major phase. Both the Sm–Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm{sub 2}Co{sub 7} films, irrespective of their thicknesses. Coercivity (H{sub c}) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm{sub 2}Co{sub 17} and Sm{sub 2}Co{sub 7}-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum H{sub c} value of 8.4 kOe is achieved for the 200 nm thick Sm{sub 2}Co{sub 17}-films. As far as e-beam evaporated Sm–Co films are concerned, this H{sub c} value is one of the best values reported so far. - Highlights: • Electron-beam evaporation was exploited to grow sub-μm thick Sm–Co films. • Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17} magnetic phases were crystallized using Sm-lean alloy targets. • Both 200 and 300-nm thick Sm–Co films revealed distinct granular morphology. • Sm–Co films of lower thickness exhibited high H{sub c} and low M{sub s} and vice-versa. • Coercivity value of 8.4 kOe achieved for the 200-nm thick Sm{sub 2}Co{sub 17}-films after RTA.

  11. Thickness of residual wetting film in liquid-liquid displacement

    Science.gov (United States)

    Beresnev, Igor; Gaul, William; Vigil, R. Dennis

    2011-08-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  12. Ultra-Smooth ZnS Films Grown on Silicon via Pulsed Laser Deposition

    Science.gov (United States)

    Reidy, Christopher; Tate, Janet

    2011-10-01

    Ultra-smooth, high quality ZnS films were grown on (100) and (111) oriented Si wafers via pulsed laser deposition with a KrF excimer laser in UHV (10-9 Torr). The resultant films were examined with optical spectroscopy, electron diffraction, and electron probe microanalysis. The films have an rms roughness of ˜1.5 nm, and the film stoichiometry is approximately Zn:S :: 1:0.87. Additionally, each film exhibits an optical interference pattern which is not a function of probing location on the sample, indicating excellent film thickness uniformity. Motivation for high-quality ZnS films comes from a proposed experiment to measure carrier amplification via impact ionization at the boundary between a wide-gap and a narrow-gap semiconductor. If excited charge carriers in a sufficiently wide-gap harvester can be extracted into a narrow-gap host material, impact ionization may occur. We seek near-perfect interfaces between ZnS, with a direct gap between 3.3 and 3.7 eV, and Si, with an indirect gap of 1.1 eV.

  13. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  14. Hydrothermally synthesized PZT film grown in highly concentrated KOH solution with large electromechanical coupling coefficient for resonator

    Science.gov (United States)

    Feng, Guo-Hua; Lee, Kuan-Yi

    2017-12-01

    This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal-oxide-semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.

  15. Attempt to produce both thick and thinned flowing superfluid films

    International Nuclear Information System (INIS)

    Kwoh, D.S.W.; Goodstein, D.L.

    1977-01-01

    As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

  16. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    International Nuclear Information System (INIS)

    Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

    2011-01-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  17. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  18. Thin dielectric film thickness determination by advanced transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  19. Photoemission electronic states of epitaxially grown magnetite films

    International Nuclear Information System (INIS)

    Zalecki, R.; Kolodziejczyk, A.; Korecki, J.; Spiridis, N.; Zajac, M.; Kozlowski, A.; Kakol, Z.; Antolak, D.

    2007-01-01

    The valence band photoemission spectra of epitaxially grown 300 A single crystalline magnetite films were measured by the angle-resolved ultraviolet photoemission spectroscopy (ARUPS) at 300 K. The samples were grown either on MgO(0 0 1) (B termination) or on (0 0 1) Fe (iron-rich A termination), thus intentionally presenting different surface stoichiometry, i.e. also different surface electronic states. Four main features of the electron photoemission at about -1.0, -3.0, -5.5 and -10.0 eV below a chemical potential show systematic differences for two terminations; this difference depends on the electron outgoing angle. Our studies confirm sensitivity of angle resolved PES technique on subtleties of surface states

  20. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

    International Nuclear Information System (INIS)

    Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

    2014-01-01

    We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

  1. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    Energy Technology Data Exchange (ETDEWEB)

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

    2010-11-10

    A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  2. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    International Nuclear Information System (INIS)

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

    2010-01-01

    A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  3. RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

    Science.gov (United States)

    Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

    2018-04-01

    Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

  4. RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Ojima

    2018-04-01

    Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

  5. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    Science.gov (United States)

    Birkett, Martin; Penlington, Roger

    2016-07-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

  6. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    International Nuclear Information System (INIS)

    Wu Wei; Yu Qingkai; Pei, Shin-Shem; Peng Peng; Bao Jiming; Liu Zhihong

    2012-01-01

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

  7. Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

    Science.gov (United States)

    Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

    2018-05-01

    Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

  8. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  9. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  10. Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

    2015-01-01

    The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO{sub 2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

  11. BaF2 POST-DEPOSITION REACTION PROCESS FOR THICK YBCO FILMS

    International Nuclear Information System (INIS)

    SUENAGA, M.; SOLOVYOV, V.F.; WU, L.; WIESMANN, H.J.; ZHU, Y.

    2001-01-01

    The basic processes of the so-called BaF 2 process for the formation of YBa 2 Cu 3 O 7 , YBCO, films as well as its advantages over the in situ formation processes are discussed in the previous chapter. The process and the properties of YBCO films by this process were also nicely described in earlier articles by R. Feenstra, (et al.) Here, we will discuss two pertinent subjects related to fabrication of technologically viable YBCO conductors using this process. These are (1) the growth of thick (>> 1 microm) c-axis-oriented YBCO films and (2) their growth rates. Before the detail discussions of these subjects are given, we first briefly discuss what geometrical structure a YBCO-coated conductor should be. Then, we will provide examples of simple arguments for how thick the YBCO films and how fast their growth rates need to be. Then, the discussions in the following two sections are devoted to: (1) the present understanding of the nucleation and the growth process for YBCO, and why it is so difficult to grow thick c-axis-oriented films (> 3 microm), and (2) our present understanding of the YBCO growth-limiting mechanism and methods to increase the growth rates. The values of critical-current densities J c in these films are of primary importance for the applications,. and the above two subjects are intimately related to the control of J c of the films. In general, the lower the temperatures of the YBCO formation are the higher the values of J c of the films. Thus, the present discussion is limited to those films which are reacted at ∼735 C. This is the lowest temperature at which c-axis-oriented YBCO films (1-3 microm thick) are comfortably grown. It is also well known that the non-c-axis oriented YBCO platelets are extremely detrimental to the values of J c such that their effects on J c dwarf essentially all of other microstructural effects which control J c . Hence, the discussion given below is mainly focused on how to avoid the growth of these crystallites

  12. Electroplated thick-film cobalt platinum permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

    2016-10-15

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

  13. Electroplated thick-film cobalt platinum permanent magnets

    International Nuclear Information System (INIS)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-01-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

  14. Quality of YBCO thin films grown on LAO substrates exposed to the film deposition - film removal processes

    Energy Technology Data Exchange (ETDEWEB)

    Blagoev, B; Nurgaliev, T [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Mozhaev, P B [Institute of Physics and Technology, Russian Academy of Sciences, 117218 Moscow (Russian Federation); Sardela, M; Donchev, T [Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, IL 61801 (United States)], E-mail: blago_sb@yahoo.com

    2008-05-01

    The characteristics are investigated of high temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) films grown on LaAlO{sub 3} (LAO) substrates being exposed a different number of times to YBCO film deposition and acid-solution-based cleaning procedures. Possible mechanisms of degradation of the substrate surface quality reflecting on the growing YBCO film parameters are discussed and analyzed.

  15. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

    2010-01-01

    . In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

  16. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  17. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  18. Presentation and characterization of novel thick-film PZT microactuators

    Energy Technology Data Exchange (ETDEWEB)

    Chalvet, Vincent; Habineza, Didace, E-mail: didace.habineza@femto-st.fr; Rakotondrabe, Micky; Clévy, Cédric

    2016-04-01

    We propose in this paper the characterization of a new generation of piezoelectric cantilevers called thick-films piezoelectric actuators. Based on the bonding and thinning process of a bulk PZT layer onto a silicon layer, these cantilevers can provide better static and dynamic performances compared to traditional piezocantilevers, additionally to the small dimensions.

  19. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  20. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  1. Polymer Thick-Film Sensors: Possibilities for Smartcard Biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, Pieter H.

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been

  2. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  3. Film Thickness and Friction Relationship in Grease Lubricated Rough Contacts

    Directory of Open Access Journals (Sweden)

    David Gonçalves

    2017-08-01

    Full Text Available The relationship between the film generation and the coefficient of friction in grease lubricated contacts was investigated. Ball-on-disc tests were performed under different operating conditions: entrainment speed, lubricant temperature and surface roughness. The tests were performed with fully formulated greases and their base oils. The greases were formulated with different thickener types and also different base oils natures and viscosities. Film thickness measurements were performed in ball-on-glass disc tests, and Stribeck curves were measured in ball-on-steel disc tests with discs of different roughness. The role of the thickener and the base oil nature/viscosity on the film thickness and coefficient of friction was addressed and the greases’ performance was compared based on their formulation.

  4. Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gao, Fangliang; Wen, Lei; Zhang, Xiaona; Guan, Yunfang; Li, Jingling; Zhang, Shuguang; Li, Guoqiang

    2015-01-01

    In 0.53 Ga 0.47 As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In 0.4 Ga 0.6 As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In 0.53 Ga 0.47 As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that the crystalline quality and surface morphology of as-grown In 0.53 Ga 0.47 As epilayer are strongly affected by the thickness of the In 0.4 Ga 0.6 As buffer layer. From TEM investigation, we understand that the type and the distribution of dislocations of the buffer layer and the as-grown In 0.53 Ga 0.47 As film are different. We have demonstrated that the In 0.4 Ga 0.6 As buffer layer with a thickness of 12 nm can advantageously release the lattice mismatch stress between the In 0.53 Ga 0.47 As and Si substrate, ultimately leading to a high-quality In 0.53 Ga 0.47 As epitaxial film with low surface roughness. - Highlights: • We provide a simple approach to achieve high-quality In 0.53 Ga 0.47 As films on Si. • An appropriate thickness of In 0.4 Ga 0.6 As buffer layer can release mismatch strain. • High-quality In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer. • Smooth surface In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer

  5. Thickness and roughness measurements of nano thin films by interference

    Directory of Open Access Journals (Sweden)

    A Sabzalipour

    2011-06-01

    Full Text Available In the standard optical interference fringes approach, by measuring shift of the interference fringes due to step edge of thin film on substrate, thickness of the layer has already been measured. In order to improve the measurement precision of this popular method, the interference fringes intensity curve was extracted and analyzed before and after the step preparation. By this method, one can measure a few nanometers films thickness. In addition, using the interference fringes intensity curve and its fluctuations, the roughness of surface is measured within a few nanometers accuracy. Comparison of our results with some direct methods of thickness and roughness measurements, i.e. using surface profilemeter and atomic force microscopy confirms the accuracy of the suggested improvements.

  6. The thickness of DLC thin film affects the thermal conduction of HPLED lights

    Science.gov (United States)

    Hsu, Ming Seng; Huang, Jen Wei; Shyu, Feng Lin

    2016-09-01

    Thermal dissipation had an important influence in the quantum effect and life of light emitting diodes (LED) because it enabled heat transfer away from electric devices to the aluminum plate for heat removal. In the industrial processing, the quality of the thermal dissipation was decided by the gumming technique between the PCB and aluminum plate. In this study, we made the ceramic thin films of diamond like carbon (DLC) by vacuum sputtering between the substrate and high power light emitting diodes (HPLED) light to check the influence of heat transfer by DLC thin films. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature of HPLEDs. The X-Ray photoelectron spectroscopy (XPS) patterns revealed that ceramic phases were successfully grown onto the substrate. At the same time, the real work temperatures showed the thickness of DLC thin film coating effectively affected the thermal conduction of HPLEDs.

  7. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  8. Influence of substrate and film thickness on polymer LIPSS formation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

    2017-02-01

    Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  9. Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

    International Nuclear Information System (INIS)

    Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

    1990-01-01

    We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

  10. Physical properties of SnS thin films grown by hot wall deposition

    International Nuclear Information System (INIS)

    Gremenok, V.; Ivanov, V.; Bashkirov, S.; Unuchak, D.; Lazenka, V.; Bente, K.; Tashlykov, I.; Turovets, A.

    2010-01-01

    Full text : Recently, considerable effort has been invested to gain a better and deeper knowledge of structural and physical properties of metal chalcogenide semiconductors because of their potential application in electrical and photonic devices. Among them, tin sulphide (SnS) has attracted attention because of band gap of 1.3 eV and an absorption coefficient greater than 10 4 cm - 1. Additionally, by using tin sulfide compounds for photovoltaic devices, the production costs are decreased, because these materials are cheap and abundant in nature. For the sythesis of SnS thin films by hot wall deposition, SnS ingots were used as the source materials synthesized from high purity elements (99.999 percent). The thin films were grown onto glass at substrate temperatures between 220 and 380 degrees Celsium. The thickness of the films was in the range of 1.0 - 2.5 μm. The crystal structure and crystalline phases of the materials were studied by XRD using a Siemens D-5000 diffractometer with CuK α (λ = 1.5418 A) radiation. In order to consider instrumental error, the samples were coated by Si powder suspended in acetone. The composition and surface morphology of thin films were investigated by electron probe microanalysis (EPMA) using a CAMECA SX-100, a scanning electron microscope JEOL 6400 and an atomic force microscope (AFM, Model: NT 206), respectively. Depth profiling was performed by Auger electron spectroscopy (AES) using a Perkin Elmer Physical Electronics 590. The electrical resistivity was studied by van der Pauw four-probe technique using silver paste contact. The optical transmittance was carried out using a Varian Cary 50 UV - VIS spectrophotometer in the range 500 - 2000 nm. The as-grown films exhibited a composition with a Sn/S at. percent ratio of 1.06. The AES depth profiles revealed relatively uniform composition through the film thickness. The XRD analysis of the SnS films showed that they were monophase (JCPDS 39-0354), polycrystalline with

  11. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

    2015-06-01

    Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

  12. Advanced engineering materials and thick film hybrid circuit technology

    International Nuclear Information System (INIS)

    Faisal, S.; Aslam, M.; Mehmood, K.

    2006-01-01

    The use of Thick Film hybrid Technology to manufacture electronic circuits and passive components continues to grow at rapid rate. Thick Film Technology can be viewed as a means of packaging active devices, spanning the gap between monolithic integrated circuit chips and printed circuit boards with attached active and passive components. An advancement in engineering materials has moved from a formulating art to a base of greater understanding of relationship of material chemistry to the details of electrical and mechanical performance. This amazing advancement in the field of engineering materials has brought us up to a magnificent standard that we are able to manufacture small size, low cost and sophisticated electronic circuits of Military, Satellite systems, Robotics, Medical and Telecommunications. (author)

  13. Biomedical sensor for transcutaneous oxygen measurements using thick film technology

    OpenAIRE

    Lam, Yu-Zhi (Liza)

    2003-01-01

    The measurement of the partial pressure of oxygen in arterial blood is essential for the analysis of a patient's respiratory condition. There are several commercially available methods and systems to measure this parameter transcutaneously. However, they tend to be cumbersome and costly. To overcome the disadvantages presented, a new type of sensor for transcutaneous blood gas measurement was investigated, employing thick film technology, which is an excellent technique to produce sensors in ...

  14. Tape casting and partial melting of Bi-2212 thick films

    Energy Technology Data Exchange (ETDEWEB)

    Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

    1994-12-31

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

  15. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  16. Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

    Science.gov (United States)

    You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

    2010-09-21

    Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

  17. TL and OSL studies on undoped diamond films grown by hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Anuj, E-mail: anujsoni.phy@gmail.com [Radiological Physics and Advisory Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Choudhary, R.K. [Materials Processing Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Polymeris, G.S. [Ankara University, Institute of Nuclear Sciences (Turkey); Mishra, D.R. [Radiological Physics and Advisory Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Center, Mumbai 400 085 (India); Kulkarni, M.S. [Radiation Safety Systems Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)

    2016-09-15

    In this work, approximately 0.5 µm thick diamond films were grown on a silicon substrate by hot filament chemical vapour deposition (HFCVD) method in a gas mixture of hydrogen and methane. The batch to batch reproducibility of the sample using this technique was found to be very good. The obtained film was characterized by micro laser Raman spectroscopy (MLRS), grazing incidence X-ray diffractometry (GIXRD), scanning electron microscopy (SEM) and atomic force miscroscopy (AFM) techniques. MLRS and GIXRD results confirmed the formation of diamond whereas SEM and AFM analyses indicated uniform morphology of the film with an average grain size of 200 nm. The deposited film was studied for ionizing radiation dosimetry applications using the thermoluminescence (TL) and optically stimulated luminescence (OSL) techniques after irradiating the film by a calibrated 5 mCi, {sup 90}Sr/{sup 90}Y beta source. In the TL measurement, for a heating rate of 4 K/s, broad glow curve was obtained which was deconvoluted into seven TL peaks. The integrated TL counts were found to vary linearly with increasing the radiation dose up to 10 kGy. The characteristic TL output seen in the temperature range 200–300 °C, may be considered good for thermal stability of the film and it could also avoid TL fading during storage and non-interference of any black body radiation during the measurement. However, in comparison to TL output, the OSL response for 470 nm LED stimulation was found to be lesser. The CW–OSL decay curve has shown two components contributing to the OSL signal, having photoionization cross-section 1.5×10{sup −18} and 5.2×10{sup −19} cm{sup 2} respectively. The studies have revealed the possibility of using diamond film for high dose radiation dosimetry with TL/OSL method.

  18. Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

    Science.gov (United States)

    Sun, Yan; Shull, Kenneth; Wang, Jin

    2010-03-01

    The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

  19. Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations

    Science.gov (United States)

    Boikov, Yu. A.; Serenkov, I. T.; Sakharov, V. I.; Claeson, T.

    2016-12-01

    Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of medium-energy ion scattering and X-ray diffraction. The grown manganite layers are under lateral biaxial compressive mechanical stresses. When (110)LAO wafers are used as the substrates, stresses relax to a great extent; the relaxation is accompanied by the formation of defects in a (3-4)-nm thick manganite-film interlayer adjacent to the LCMO-(110)LAO interface. When studying the structure of the grown layers, their electro- and magnetotransport parameters have been measured. The electroresistance of the LCMO films grown on the substrates of both types reached a maximum at temperature T M of about 250 K. At temperatures close to T M magnetoresistance of the LCMO/(110)LAO films exceeds that of the LCMO/(001)LAO films by 20-30%; however, the situation is inverse at low temperatures ( T < 150 K). At T < T M , the magnetotransport in the grown manganite films significantly depends on the spin ordering in ferromagnetic domains, which increase with a decrease in temperature.

  20. Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

    2016-01-01

    We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

  1. Fatigue crack closure in submicron-thick freestanding copper films

    International Nuclear Information System (INIS)

    Kondo, Toshiyuki; Ishii, Takaki; Hirakata, Hiroyuki; Minoshima, Kohji

    2015-01-01

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–K max (maximum stress intensity factor) region of K max <4.5 MPam 1/2 . The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor K op was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔK eff =K max −K op was then evaluated. The R-dependence of the da/dN vs. ΔK eff relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔK eff is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films

  2. Surface plasmon resonances of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition at different compositions and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Shweta, E-mail: shwetaverma@rrcat.gov.in; Rao, B. T.; Detty, A. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Ganesan, V.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, Indore 452 001 (India); Rai, S. K. [Indus Synchrotons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bose, A.; Joshi, S. C. [Proton Linac and Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2015-04-07

    We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles of increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.

  3. Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

    Directory of Open Access Journals (Sweden)

    Manik Goyal

    2018-02-01

    Full Text Available Low-temperature magnetotransport studies are reported for (112Cd3As2 films grown on (111CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at low temperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at ∼10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in three-dimensional Dirac semimetals.

  4. Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

    Science.gov (United States)

    Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

    2017-09-01

    Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

  5. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  6. Thick film magnetic nanoparticulate composites and method of manufacture thereof

    Science.gov (United States)

    Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Ge, Shihui (Inventor); Zhang, Zongtao (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor)

    2009-01-01

    Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

  7. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  8. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  9. The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2011-01-01

    The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

  10. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    Energy Technology Data Exchange (ETDEWEB)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

    2015-07-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

  11. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    International Nuclear Information System (INIS)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y.; Fourmentel, D.; Destouches, C.; Villard, J.F.

    2015-01-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m -2 .K -1 and 130 μC.N -1 for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to

  12. Comparative study of structural and electro-optical properties of ZnO:Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their application on polymer-based organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Chih-Hao, E-mail: dataman888@hotmail.com [R& D Division, Walsin Technology Corporation, Kaohsiung, Taiwan (China); Hsiao, Yu-Jen [National Nano Device Laboratories, National Applied Research Laboratories, Tainan, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan (China)

    2016-08-01

    Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET substrates at a low temperature of 90 °C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400 nm was deposited at 90 °C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical properties, chemical states, and doping efficiency of the films produced by the steered CAPE and MS processes was performed, and the effect of thickness on the CAPE-grown GZO films was investigated in detail. The results showed that the GZO films grown by steered CAPE exhibited higher crystallinity and lower internal stress than those deposited by MS. The transmittance and electrical properties were also enhanced for the steered CAPE-grown films. The figure of merit (Φ = T{sup 10}/R{sub s}, where T is the transmittance and R{sub s} is the sheet resistance in Ω/□). was used to evaluate the performance of the electro-optical properties. The GZO films with a thickness of 400 nm deposited by CAPE had the highest Φ value, 1.94 × 10{sup −2} Ω{sup −1}, a corresponding average visible transmittance of 88.8% and resistivity of 6.29 × 10{sup −4} Ω·cm. In contrast, the Φ value of MS-deposited GZO film with a thickness of 400 nm is only 1.1 × 10{sup −3} Ω{sup −1}. This can be attributed to the increase in crystalline size, [0001] preferred orientation, decrease in stacking faults density and Ar contamination in steered CAPE-grown films, leading to increases in the Hall mobility and carrier density. In addition, the power conversion efficiency (PCE) of organic solar cells was significantly improved by using the CAPE-grown GZO electrode, and the PCE values were 1.2% and 1.7% for the devices with MS-grown and CAPE-grown GZO electrodes, respectively. - Highlights: • ZnO:Ga (GZO) films were grown on PET by steered cathodic arc plasma evaporation (CAPE

  13. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  14. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Holt, Ian, E-mail: ian.holt@rjah.nhs.uk [Wolfson Centre for Inherited Neuromuscular Disease, RJAH Orthopaedic Hospital, Oswestry, Shropshire SY10 7AG (United Kingdom); Institute for Science and Technology in Medicine, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Gestmann, Ingo, E-mail: Ingo.Gestmann@fei.com [FEI Europe B.V., Achtseweg Noord 5, 5651 Eindhoven (Netherlands); Wright, Andrew C., E-mail: a.wright@glyndwr.ac.uk [Advanced Materials Research Laboratory, Glyndwr University, Plas Coch, Mold Rd, Wrexham LL11 2AW (United Kingdom)

    2013-10-15

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth.

  15. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    International Nuclear Information System (INIS)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C.

    2013-01-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth

  16. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

    2015-01-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al 2 O 3 )/hafnium oxide (HfO 2 ) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN x layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  17. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  18. Preparation and characterization of thick BSCCO 2223 films

    International Nuclear Information System (INIS)

    Ciancio, G; Avila, A; Malachevsky, M.T; Ovidio, C.A

    2002-01-01

    Among the most widespread applications for critical high-temperature ceramic superconductors are for silver veined tapes, with the superconductor in the middle. These tapes are prepared by the powder- in - tube method. To attain high densities of critical current, the ceramic material must have a certain texture, with the grains oriented with the c axis perpendicular to the direction in which the current circulates. In the system that was studied, the degree of orientation increases as the distance to the vein decreases, with the maximum being in the silver-ceramic inter-phase. Superconductor tapes become inconvenient when defining the ceramic, especially because of the orientation of their plates as a function of the distance to the silver. Although the silver can be dissolved by a chemical attack in order to uncover the ceramic, greater precaution is needed while manipulating the superconductor and obtaining representative data. The behavior of thick films of the compound BSCCO 2223, deposited on silver sheets, forming silver-ceramic composites, was studied. These sheets simulate the silver-ceramic inter-phase and the distribution of the grains towards the center in a thick tape. After the samples were prepared, the phases that were present were characterized by x-ray diffraction and the resulting microstructure was analyzed with a SEM (Scanning Electron Microscope). Its mechanical properties were evaluated, following the formation and propagation of cracks in real time using four point flexion microassays inside the SEM chamber, as well as generating tension-deformation curves. The method of preparation of the thick films is discussed and its influence on the results obtained with the different characterizations (cw)

  19. Film thickness determining method of the silicon isotope superlattices by SIMS

    International Nuclear Information System (INIS)

    Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

    2008-01-01

    It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

  20. Influence of Liquid Petroleum Gas on the Electrical Parameters of the WO3 Thick Film

    Directory of Open Access Journals (Sweden)

    R. S. KHADAYATE

    2007-02-01

    Full Text Available In this work, the WO3 thick films were prepared by standard screen-printing technology. These films were characterized by x-ray diffraction (XRD measurements and scanning electron microscopy (SEM. Influence of LPG on the electrical properties of the prepared WO3 thick film is reported. It was observed that the slope of the Arrhenius curves of the WO3 thick film decreased as the medium changed from pure air to 100 ppm LPG in air. From I-V characteristics, it was observed that the WO3 thick film exhibit highest sensitivity to 50 ppm LPG in air at 400oC.

  1. Magnetic resonance studies of the Mg acceptor in thick free-standing and thin-film GaN

    Science.gov (United States)

    Zvanut, Mary Ellen

    Mg, the only effective p-type dopant for the nitrides, substitutes for Ga and forms an acceptor with a defect level of about 0.16 eV. The magnetic resonance of such a center should be highly anisotropic, yet early work employing both optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectroscopies revealed a defect with a nearly isotropic g-tensor. The results were attributed to crystal fields caused by compensation and/or strain typical of the heteroepitaxially grown films. The theory was supported by observation of the expected highly anisotropic ODMR signature in homoepitaxially grown films in which dislocation-induced non-uniform strain and compensation are reduced. The talk will review EPR measurements of thin films and describe new work which takes advantage of the recently available thick free-standing GaN:Mg substrates grown by hydride vapor phase epitaxy (HVPE) and high nitrogen pressure solution growth (HNPS). Interestingly, the films and HVPE substrates exhibit characteristically different types of EPR signals, and no EPR response could be induced in the HNPS substrates, with or without illumination. In the heteroepitaxial films, a curious angular dependent line-shape is observed in addition to the nearly isotropic g-tensor characteristic of the Mg-related acceptor. On the other hand, the free-standing HVPE crystals reveal a clear signature of a highly anisotropic shallow acceptor center. Comparison with SIMS measurements implies a direct relation to the Mg impurity, and frequency-dependent EPR studies demonstrate the influence of the anisotropic crystal fields. Overall, the measurements of the thick free-standing crystals show that the Mg acceptor is strongly affected by the local environment. The ODMR was performed by Evan Glaser, NRL and the free-standing Mg-doped HVPE crystals were grown by Jacob Leach, Kyma Tech. The work at UAB is supported by NSF Grant No. DMR-1308446.

  2. Thin film solar cells grown by organic vapor phase deposition

    Science.gov (United States)

    Yang, Fan

    Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

  3. Effect of thickness on optical properties of thermally evaporated SnS films

    International Nuclear Information System (INIS)

    Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

    2013-01-01

    The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

  4. Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

    Science.gov (United States)

    Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

    2016-05-01

    Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

  5. Study optoelectronic properties for polymer composite thick film

    Science.gov (United States)

    Jobayr, Mahmood Radhi; Al Razak, Ali Hussein Abd; Mahdi, Shatha H.; Fadhil, Rihab Nassr

    2018-05-01

    Coupling the epoxy with cadmium oxide particles are important for optical properties that may be affected by various mixing proportions. The aim of this experimental study was to evaluate the effect of different mixing proportions on these properties of reinforced epoxy with cadmium oxide particles. The ultrasonic techniques were used to mix and prepared samples of composites. The surfaces topographic of the 50 µm thick reinforced epoxy films were studied using atomic force microscopy (AFM) and microscopy technique (FTIR) Spectroscopy. AFM imaging and quantitative characterization of the films showed that for all samples the root mean square of the surface roughness increases monotonically with increasing the CdO concentrations (from 0% to 15%). The observed effects of CdO concentrations on surface roughness can be explained by two things: the first reason is that the atoms of additives are combined with the original material to form a new compound that is smoother, more homogeneity and smaller in particle size. The second reason is due to high mixing due to ultrasonic mixing. It is clear also, AFM examination of the prepared samples of reinforced epoxy resin shown that topographical contrast and the identification of small structural details critically depend on hardness of epoxy resin, which in turn depended on the ratio of material (CdO) added. We show that the AFM imaging of the films showed that the mean diameter (104.8nm) of films for all of the samples decreased from 135.50 nm to 83.20 nm with the increase of CdO concentrations.

  6. A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

    International Nuclear Information System (INIS)

    Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

    1988-01-01

    Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

  7. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    International Nuclear Information System (INIS)

    Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

    2012-01-01

    ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  8. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2012-05-15

    ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  9. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  10. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  11. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    International Nuclear Information System (INIS)

    Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

    2016-01-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  12. Pinning of 1800 Bloch walls at etched nuclear tracks in LPE-grown iron garnet films

    International Nuclear Information System (INIS)

    Krumme, J.; Bartels, I.; Strocka, B.; Witter, K.; Schmelzer, C.; Spohr, R.

    1977-01-01

    For increasing the magnetic-wall coercivity H/sup w//sub c/ in liquid-phase epitaxial (LPE) ferrimagnetic garnet films of composition (Gd,Bi) 3 (Fe,Al,Ga) 5 O 12 , magnetic-wall ''traps'' are formed via bombardment by xenon ions with 180-MeV/ion energy and doses between 10 6 and 10 8 cm -2 . For efficient wall pinning, the width of the nuclear damage tracks associated with the ion trajectories in the film have been enlarged to about the wall width by using a selective (chemical) etchant that makes use of the drastically increased etching rate in the damaged track volume. Therefore, channels of cylindrical or prismatic cross section are created having a width of a few 10 2 to about 10 3 A and a length of more than 10 μm at the given etching conditions. The pinning capability of such channels can be further enhanced in films that are grown under planar compressive or tensile misfit strain. Then, strain relaxation occurs in the vicinity of these channels which results in steep gradients of the magnetic-wall energy via magnetostriction. These strain halos extend sufficiently beyond the channels so that efficient wall pinning is observed, even if the channel cross section is small compared with the wall width. Thermomagnetic compensation-point writing in LPE garnet film, that were treated accordingly, yield a pattern of stable magnetic domains of down to 8 μm in diameter in 3-μm-thick layers. The effect of etched nuclear tracks on the magnetic-wall coercivity can be interpreted satisfactorily with present models on H/sup w//sub c/

  13. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  14. Magnetic Probe Construction using Thick-film Technology

    International Nuclear Information System (INIS)

    Takahashi, H.; Sakakibara, S.; Kubota, Y.; Yamada, H.

    2001-01-01

    Thick-film technology has been successfully adapted for the design and fabrication of magnetic probes of a new type suitable for use in the simultaneous ultra-high vacuum and high-temperature environment of a nuclear fusion device. The maximum usable temperature is expected to be around 900 degrees C. This new probe has a specific sensitivity (coupling area per unit volume) an order of magnitude higher than a conventional coil. The new probe in one implementation is capable of simultaneously measuring magnetic field in three orthogonal directions about a single spatial point and in two frequency ranges. Low-frequency coils have a measured coupling area of 296-323 cm squared and a frequency response of about 300 kHz. High-frequency coils have a design coupling area of 12-15 cm squared

  15. Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

    Science.gov (United States)

    Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

    2006-10-01

    Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

  16. High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Chen, Yajie, E-mail: y.chen@neu.edu; Gillette, Scott; Su, Zhijuan; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Wolf, Jason; McHenry, Michael E. [Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-02-17

    Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

  17. Comparative study of ITO and FTO thin films grown by spray pyrolysis

    International Nuclear Information System (INIS)

    Ait Aouaj, M.; Diaz, R.; Belayachi, A.; Rueda, F.; Abd-Lefdil, M.

    2009-01-01

    Tin doped indium oxide (ITO) and fluorine doped tin oxide (FTO) thin films have been prepared by one step spray pyrolysis. Both film types grown at 400 deg. C present a single phase, ITO has cubic structure and preferred orientation (4 0 0) while FTO exhibits a tetragonal structure. Scanning electron micrographs showed homogeneous surfaces with average grain size around 257 and 190 nm for ITO and FTO respectively. The optical properties have been studied in several ITO and FTO samples by transmittance and reflectance measurements. The transmittance in the visible zone is higher in ITO than in FTO layers with a comparable thickness, while the reflectance in the infrared zone is higher in FTO in comparison with ITO. The best electrical resistivity values, deduced from optical measurements, were 8 x 10 -4 and 6 x 10 -4 Ω cm for ITO (6% of Sn) and FTO (2.5% of F) respectively. The figure of merit reached a maximum value of 2.15 x 10 -3 Ω -1 for ITO higher than 0.55 x 10 -3 Ω -1 for FTO.

  18. Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

    Directory of Open Access Journals (Sweden)

    Marsetio Noorprajuda

    2018-04-01

    Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

  19. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

    2015-09-30

    Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

  20. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  1. CO2 Selective Potentiometric Sensor in Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Ralf Moos

    2008-08-01

    Full Text Available A potentiometric sensor device based on screen-printed Nasicon films was investigated. In order to transfer the promising sensor concept of an open sodium titanate reference to thick film technology, “sodium-rich” and “sodium-poor” formulations were compared. While the “sodium-rich” composition was found to react with the ion conducting Nasicon during thermal treatment, the “sodium-poor” reference mixture was identified as an appropriate reference composition. Screen-printed sensor devices were prepared and tested with respect to CO2 response, reproducibility, and cross-interference of oxygen. Excellent agreement with the theory was observed. With the integration of a screen-printed heater, sensor elements were operated actively heated in a cold gas stream.

  2. Electroplating moulds using dry film thick negative photoresist

    Science.gov (United States)

    Kukharenka, E.; Farooqui, M. M.; Grigore, L.; Kraft, M.; Hollinshead, N.

    2003-07-01

    This paper reports on progress on the feasibility of fabricating moulds for electroplating using Ordyl P-50100 (negative) acrylate polymer based dry film photoresist, commercially available from Elga Europe (http://www.elgaeurope.it). We used this photoresist as an alternative to SU8 negative epoxy based photoresist, which is very difficult to process and remove after electroplating (Lorenz et al 1998 Microelectron. Eng. 41/42 371-4, Eyre et al 1998 Proc. MEMS'98 (Heidelberg) (Piscataway, NJ: IEEE) pp 218-22). Ordyl P-50100 is easy to work with and can be easily removed after processing. A single layer of Ordyl P-50100 was deposited by lamination up to 20 µm thickness. Thicker layers (200 µm and more) can be achieved with multilayer lamination using a manual laminator. For our applications we found that Ordyl P-50100 dry film photoresist is a very good alternative to SU8 for the realization of 100 µm high moulds. The results presented will open up new possibilities for low-cost LIGA-type processes for MEMS applications.

  3. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi; Katuri, Krishna; Kavanagh, Paul; Kumar, Amit Ravi Pradeep; Leech, Dó nal

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  4. n-VO{sub 2}/p-GaN based nitride–oxide heterostructure with various thickness of VO{sub 2} layer grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Minhuan [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China (China); Sun, Hongjun; Liu, Weifeng [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China (China); Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2016-12-15

    Graphical abstract: The significant influences of VO{sub 2} layer thickness on the structural, electrical and contact properties of the n-VO{sub 2}/p-GaN based nitride-oxide heterostructure were investigated systemically. - Highlights: • High quality VO{sub 2} films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). • A distinct reversible SMT phase transition was observed for the n-VO{sub 2}/p-GaN based nitride-oxide heterostructure. • The clear rectifying transport characteristics originated from the n-VO{sub 2}/p-GaN interface were demonstrated before and after SMT of the VO{sub 2} over layer. • The XPS analyses confirmed the valence state of V in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}. • The design and modulation of the n-VO{sub 2}/p-GaN based heterostructure devices will benefit significantly from these achievements. - Abstract: High quality VO{sub 2} films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO{sub 2} layer thickness on the SMT properties of the as-grown n-VO{sub 2}/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO{sub 2}/p-GaN interface were demonstrated before and after SMT of the VO{sub 2} over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}. The design and modulation of the n-VO{sub 2}/p-GaN based heterostructure

  5. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    International Nuclear Information System (INIS)

    Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

    2014-01-01

    10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  6. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  7. Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

    Science.gov (United States)

    Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

    2016-01-01

    We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

  8. A new attempt of measurement film thickness by x-ray diffractometry

    International Nuclear Information System (INIS)

    Kosaka, Masao; Kobayashi, Hideo

    1987-01-01

    In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

  9. Ellipsometry study on Pd thin film grown by atomic layer deposition with Maxwell–Garnett effective medium approximation model

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yihang; Zhou, Xueqi; Cao, Kun [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Xiuguo; Deng, Zhang [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Liu, Shiyuan, E-mail: shyliu@hust.edu.cn [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Shan, Bin [State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Rong, E-mail: rongchen@mail.hust.edu.cn [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-10-30

    Maxwell–Garnett effective medium approximation (MG-EMA) model is chosen to study Pd ultrathin film grown on Si substrate, as well as its growth on self-assembled monolayers (SAMs) modified substrate respectively. The general oscillator (GO) model with one Drude and two Lorentz oscillators is firstly applied to fix the optical constants of Pd. Compared with Pd bulk model, MG-EMA model with GO is more reliable to predict the film thickness verified by X-ray reflection test. The stable growth rate on Si substrate reveals our methods are feasible and the quartz crystal microbalance measurement confirms the stability of the ALD chamber. For Pd coverage, MG-EMA fitting result is similar to the statistical computation from scanning electron microscope when Pd ALD cycles are over 400, while large bias exists for cycles under 400, might be due to that air is not the proper filling medium between nanoparticles. Then we change the filling medium into SAMs as a comparison, better fitting performance is obtained. It is demonstrated that the filling medium between nanoparticles is important for the application of MG-EMA model. - Highlights: • Ultrathin Pd thin films were grown by atomic layer deposition. • The measurement of thin film was important to understand initial growth behavior. • Maxwell–Garnett effective medium approximation model was applied. • Pd nanoparticle size and coverage were studied. • The filling medium between nanoparticles was important for model application.

  10. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  11. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  12. Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

    International Nuclear Information System (INIS)

    Kotlyarchuk, B.; Savchuk, V.

    2007-01-01

    This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 10 3 Ωcm at room temperature. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Electron-diffraction and spectroscopical characterisation of ultrathin ZnS films grown by molecular beam epitaxy on GaP(0 0 1)

    International Nuclear Information System (INIS)

    Zhang, L.; Szargan, R.; Chasse, T.

    2004-01-01

    ZnS films were grown by molecular beam epitaxy employing a single compound effusion cell on GaP(0 0 1) substrate at different temperatures, and characterised by means of low energy electron diffraction, X-ray and ultra-violet photoelectron spectroscopy, angle-resolved ultra-violet photoelectron spectroscopy and X-ray emission spectroscopy. The GaP(0 0 1) substrate exhibits a (4x2) reconstruction after Ar ion sputtering and annealing at 370 deg. C. Crystal quality of the ZnS films depends on both film thickness and growth temperature. Thinner films grown at higher temperatures and thicker films grown at lower temperatures have better crystal quality. The layer-by-layer growth mode of the ZnS films at lower (25, 80 and 100 deg. C) temperatures changes to layer-by-layer-plus-island mode at higher temperatures (120, 150 and 180 deg. C). A chemical reaction takes place and is confined to the interface. The valence band offset of the ZnS-GaP heterojunction was determined to be 0.8±0.1 eV. Sulphur L 2,3 emission spectra of ZnS powder raw material and the epitaxial ZnS films display the same features, regardless of the existence of the Ga-S bonding in the film samples

  14. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  15. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  16. The interface quality of Ge nanoparticles grown in thick silica matrix

    Energy Technology Data Exchange (ETDEWEB)

    Dasović, J.; Dubček, P.; Pucić, I. [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia); Bernstorff, S. [Elettra-Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS) (Italy); Radić, N. [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia); Pivac, B., E-mail: pivac@irb.hr [RuđerBošković Institute, Bijenička 54, Zagreb 10000 (Croatia)

    2017-08-31

    Highlights: • Ge nanoparticles were grown in SiO{sub 2} matrix by magnetron sputtering. • GISAXS analysis was used to study nanoparticles. • Nanoparticle's surface exhibit fractal nature that affect other properties. - Abstract: Germanium nanoparticles, or Ge quantum dots (QDs), embedded in different transparent dielectric matrix exhibit properties significantly different from the same bulk semiconductor and therefore exhibit a considerable potential for applications in advanced electronic and optoelectronic devices. It is expected that the quantum confinement effect will tune the optical bandgap simply by varying the QDs size. Nevertheless, the question remains whether and how the defects often present in the matrix or at interfaces affect their properties. A thick (SiO{sub 2} + Ge) layer was deposited by magnetron sputtering and after suitable thermal treatment spherical Ge QDs were formed in SiO{sub 2} matrix with rather narrow size distribution, as confirmed by GIWAXS and GISAXS analysis. It is shown that the formed surface/interface of the QDs with the matrix was rough with fractal nature. Annealing in N{sub 2} atmosphere produced photoluminescence (PL) in the visible part of the spectrum which consists of three contributions. All are attributed to structural defects at or close to the Ge/SiO{sub x} interface. Time-resolved PL results support the assumption that the three components are dominant in the observed luminescence.

  17. Thermal stability of amorphous carbon films grown by pulsed laser deposition

    Science.gov (United States)

    Friedmann, T. A.; McCarty, K. F.; Barbour, J. C.; Siegal, M. P.; Dibble, Dean C.

    1996-03-01

    The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence (≳20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (˜200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures.

  18. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  19. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films

    Directory of Open Access Journals (Sweden)

    L. V. Saraf

    2008-01-01

    Full Text Available Ultrathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin (∼10–12 unit cells thick epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM and substrate roughness of ∼1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.

  20. Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

    International Nuclear Information System (INIS)

    Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.

    2014-01-01

    We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F  = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t

  1. Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y., E-mail: youngok@chem.s.u-tokyo.ac.jp [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Hirose, Y.; Fukumura, T.; Hasegawa, T. [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Nakao, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Xu, J. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-01-13

    We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.

  2. Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2012-03-15

    Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

  3. An Optoelectronic Sensor Configuration Using ZnO Thick Film for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Shobhna DIXIT

    2007-08-01

    Full Text Available In the present paper sensitivity of a nanocrystalline ZnO thick film to methanol vapors is reported. The sensing mechanism is the modulation in the intensity of light reflected from glass film interface. Modulation occurs due to the change in refractive index of ZnO film upon adsorption of vapor molecules. The film has been characterized by XRD, SEM, and optical transmission studies. XRD pattern reveals polycrystalline structure of the film with grain size 33.5 nm.

  4. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Asish K., E-mail: asish.kundu@saha.ac.in; Menon, Krishnakumar S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 70064 (India)

    2016-05-23

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  5. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  6. Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Cho, S; DiVenere, A; Wong, G K; Ketterson, J B; Meyer, J R; Hoffman, C A

    1997-07-01

    The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

  7. State of the art in thin film thickness and deposition rate monitoring sensors

    International Nuclear Information System (INIS)

    Buzea, Cristina; Robbie, Kevin

    2005-01-01

    In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages

  8. The determination of the pressure-viscosity coefficient of two traction oils using film thickness measurements

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2010-01-01

    The pressure-viscosity coefficients of two commercial traction fluids are determined by fitting calculation results on accurate film thickness measurements, obtained at a wide range of speeds, and different temperatures. Film thickness values are calculated using a numerical method and approximation

  9. The effect of bubble acceleration on the liquid film thickness in micro tubes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2010-08-15

    Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

  10. Ethanol vapour sensing properties of screen printed WO 3 thick films

    Indian Academy of Sciences (India)

    The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

  11. The effect of bubble acceleration on the liquid film thickness in micro tubes

    International Nuclear Information System (INIS)

    Han, Youngbae; Shikazono, Naoki

    2010-01-01

    Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

  12. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    Science.gov (United States)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  13. Development of a metrology method for composition and thickness of barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

    1998-01-01

    Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

  14. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  15. Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

    Science.gov (United States)

    Lee, Sang Heon

    2013-05-01

    BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

  16. Composition of MBE-grown iron oxide films

    NARCIS (Netherlands)

    Voogt, F.C; Hibma, T; Smulders, P.J M; Niesen, L

    A wide range of iron oxides have been grown epitaxially on MgO(100) substrates using a dual beam technique in which the deposited iron is oxidised by a beam of NO2 particles. At high fluxes magnetite (Fe3-deltaO4) phases with compositions between near-stoichiometric magnetite (Fe3O4, delta = 0) and

  17. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  18. Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

    Science.gov (United States)

    Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

    2017-12-01

    We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

  19. High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

    Science.gov (United States)

    Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

    Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

  20. Effects of substrate material on carbon films grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Liu, M.; Xu, X.Y.; Man, B.Y.; Kong, D.M.; Xu, S.C.

    2012-01-01

    Highlights: ► We prepared tri-layers by laser molecular beam epitaxy (LMBE) on sapphire substrate. ► We found that the formation of the graphene film has a strong relation to the structure and properties of the substrate. ► The different carbon film formation mechanism of the buffer layers can affect the morphology of the film. - Abstract: The carbon thin films were grown on different substrates with different buffer layers by laser molecular beam epitaxy (LMBE) with a high purity graphite carbon target. A UV pulsed KrF excimer laser with a wavelength of 248 nm was used as laser source. The structure, surface morphology and other properties of the carbon thin films were characterized by Raman spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED) and atomic force microscopy (AFM). The results show that the properties of the carbon thin films and the formation of the graphene film have a strong relation to the structure and properties of the substrate. The substrate with a hexagonal wurtzite structure which is similar to the hexagonal honeycomb structure of the carbon atoms arranged in the graphene is more beneficial for the formation of the graphene thin film. In our experiment conditions, the carbon films grown on sapphire substrates with different buffer layers have an ordered structure and a smooth surface, and form high quality tri-layer graphene films.

  1. Nb3Ge superconductive films grown with nitrogen

    International Nuclear Information System (INIS)

    Sigsbee, R.A.

    1978-01-01

    A superconductive film of Nb 3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10 -5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb 3 Ge on the heated substrate

  2. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra

    2017-08-24

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  3. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

    2017-01-01

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  4. Experimental study of the polymer powder film thickness uniformity produced by the corona discharge

    Science.gov (United States)

    Fazlyyyakhmatov, Marsel

    2017-01-01

    The results of an experimental study of the polymer powder film thickness uniformity are presented. Polymer powder films are produced by the electrostatic field of corona discharge. Epoxy and epoxy-polyester powder films with thickness in the range of 30-120 microns are studied. Experimentally confirmed possibility of using these coatings as protective matching layer of piezoceramic transducers at frequencies of 0.5-15 MHz.

  5. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

    International Nuclear Information System (INIS)

    Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

    2005-01-01

    Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

  6. Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

    Directory of Open Access Journals (Sweden)

    C. G. DIGHAVKAR

    2009-02-01

    Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

  7. Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    R. Y. Borse

    2009-12-01

    Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

  8. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

    2012-01-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  9. Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

    Science.gov (United States)

    Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

    2014-08-01

    We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

  10. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    International Nuclear Information System (INIS)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-01-01

    An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

  11. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    Science.gov (United States)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-09-01

    An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

  12. X-ray diffractometry of 10 nm thick YBa2Cu3O7-x films

    International Nuclear Information System (INIS)

    Drozdov, Yu.N.; Moldavskaya, L.D.; Parafin, A.E.

    1998-01-01

    We report on some specific features of the X-ray diffraction spectra for ultrathin c-axis-oriented YBCO films. The films were prepared by laser deposition on LaAlO 3 substrates. A DRON-4 powder diffractometer was used to analyze a structure and to measure thickness of the films. We find that this conventional technique can detect the YBCO films as thin as 5 nm. The X-ray interference fringes in the vicinity of the (005) YBCO reflections for the films from 10 to 20 nm thick were clearly visible. The oscillation period of the fringes depends on the thickness of the film and the intensity modulation yields some structural information. The I(-1)/I(+1) fringes intensity ratio was found to be sensitive to the type of atomic layer at the top and bottom of YBCO film [ru

  13. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  14. Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

    International Nuclear Information System (INIS)

    Srivastava, R.P.; De Wagter, C.

    2012-01-01

    The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

  15. Nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y films using ion beam channeling

    International Nuclear Information System (INIS)

    Nebiki, Takuya; Narusawa, Tadashi; Kumagai, Akiko; Doi, Hideyuki; Saito, Tadashi; Takagishi, Shigenori

    2006-01-01

    We have investigated the nitrogen lattice location in MOVPE grown Ga 1-x In x N y As 1-y with x=0.07 and y=0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1-x In x N y As 1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N(α,p) 17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ∼0.2 A from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms. (author)

  16. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  17. Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

    International Nuclear Information System (INIS)

    Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

    2014-01-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co 2 FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization

  18. A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

    OpenAIRE

    Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

    2001-01-01

    A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

  19. Crystalline silicon films grown by pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

    2002-04-01

    Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

  20. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

    2015-10-15

    Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  1. Friction and wear performance of diamond-like carbon films grown in various source gas plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Nilufer, I.B.; Eryilmaz, O.L.; Beschliesser, M.; Fenske, G.R. [Argonne National Lab., IL (United States). Energy Technology Div.

    1999-11-01

    In this study, we investigated the effects of various source gases (methane, ethane, ethylene, and acetylene) on the friction and wear performance of diamond-like carbon (DLC) films prepared in a plasma-enhanced chemical vapor deposition (PECVD) system. Films were deposited on AISI H13 steel substrates and tested in a pin-on-disk machine against DLC-coated M50 balls in dry nitrogen. We found a close correlation between friction coefficient and source gas composition. Specifically, films grown in source gases with higher hydrogen-to-carbon ratios exhibited lower friction coefficients and a higher wear resistance than films grown in source gases with lower hydrogen-to-carbon (H/C) ratios. The lowest friction coefficient (0.014) was achieved with a film derived from methane with an H/C ratio of 4, whereas the coefficient of films derived from acetylene (H/C=1) was 0.15. Similar correlations were observed for wear rates. Specifically, films derived from gases with lower H/C values were worn out, and the substrate material was exposed, whereas films from methane and ethane remained intact and wore at rates that were almost two orders of magnitude lower than films obtained from acetylene. (orig.)

  2. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    International Nuclear Information System (INIS)

    Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

    2015-01-01

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

  3. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  4. Noise properties of Pb/Cd-free thick film resistors

    International Nuclear Information System (INIS)

    Stadler, Adam Witold; Kolek, Andrzej; Zawislak, Zbigniew; Mleczko, Krzysztof; Jakubowska, Malgorzata; Kielbasinski, Konrad Rafal; Mlozniak, Anna

    2010-01-01

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO 2 - and CaRuO 3 -based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter C bulk . Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO 2 layers noise increases most likely due to larger grain size of RuO 2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter C int . Pb/Cd-free RuO 2 -based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO 3 -based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  5. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo, K.; Pryds, N.; Theil Kuhn, L.; Esposito, V.; Linderoth, S. [Technical University of Denmark, Fuel Cells and Solid State Chemistry Division, Risoe DTU, Roskilde (Denmark); Heiroth, S.; Lippert, T. [Paul Scherrer Institute, General Energy Research Department, Villigen PSI (Switzerland); Schou, J. [Technical University of Denmark, Department of Photonics Engineering, Roskilde (Denmark)

    2011-09-15

    Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400 C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions {<=}{proportional_to}11 nm. The films show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat treatment at 400 C and 800 C. The effect of the grain coarsening on the electrical characteristics of the layers is investigated and discussed in the context of a variation of the number density of grain boundaries. The results are evaluated with regard to the use of ultrathin CGO10 films as seeding templates for the moderate temperature growth of thick solid electrolyte films with improved oxygen transport properties. (orig.)

  6. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  7. Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

    Science.gov (United States)

    Krantz, Timothy Lewis

    2013-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

  8. Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

    Science.gov (United States)

    Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

    2017-12-01

    The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

  9. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    International Nuclear Information System (INIS)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa; Kim, Jong Il

    2010-01-01

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 μm) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film

  10. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Kim, Jong Il [Chonbuk National University, Jeonju (Korea, Republic of)

    2010-06-15

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 {mu}m) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film.

  11. The research of device for measuring film thickness of intelligent coating machine

    Directory of Open Access Journals (Sweden)

    Wang Wanjun

    2015-01-01

    Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

  12. Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    D. N. CHAVAN

    2010-12-01

    Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

  13. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  14. High-throughput measurement of polymer film thickness using optical dyes

    Science.gov (United States)

    Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

    2005-01-01

    Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

  15. Critical current density and microstructure of YBa2Cu3O7-x films as a function of film thickness

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Turner, L.G.; Hall, E.L.; Lewis, N.

    1990-01-01

    Thin films of nominal composition YBa 2 Cu 3 O 7-x (YBCO) were produced on (100) SrTiO 3 substrates by coevaporation and furnace annealing. Film thicknesses in the range of 0.2 to 2.4 μm were analyzed. Microstructural investigations by cross sectional transmission electron microscopy (TEM) reveal a continuous layer of about 0.4 μm thickness adjacent to the substrate with c-axis normal to the substrate plane. In thicker films the remaining top portion has the c-axis in the film plane. The critical current density (J c ) at 77 K decreases with increasing thickness in the thickness range exceeding 0.4 μm, qualitatively consistent with the microstructural observation, but quantitatively inconsistent with a simple model based on the microstructural data

  16. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  17. Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

    International Nuclear Information System (INIS)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

    2015-01-01

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  18. Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

    2013-01-01

    Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

  19. Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer

    International Nuclear Information System (INIS)

    Bagkar, Nitin; Choudhury, Sipra; Kim, Kyung-Hee; Chowdhury, Prasanta; Lee, Sung-Ik; Yakhmi, J.V.

    2006-01-01

    Crystalline films of cobalt, nickel and iron hexacyanochromates (analogues of Prussian blue) were grown at air-water interface using a surfactant monolayer as a template. These films were transferred on suitable substrates and characterized by X-ray diffraction (XRD), cyclic voltammetry and magnetization measurements. XRD patterns confirmed the formation of oriented crystals in {100} direction for all these films. Magnetization data on nickel and iron hexacyanochromate films indicated ferromagnetic behaviour below Curie temperatures of 72 and 21 K, respectively. The methodology adopted by us to grow crystalline films is useful in obtaining magnetic thin films of analogues of Prussian blue with interesting magnetic properties with respect to transition temperatures and nature of magnetic ordering

  20. Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

    2014-07-21

    A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

  1. Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Phelan, P.E.; Chen, G.; Tien, C.L.

    1991-01-01

    Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

  2. Tungsten oxide nanowires grown on amorphous-like tungsten films

    International Nuclear Information System (INIS)

    Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

    2015-01-01

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

  3. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

    International Nuclear Information System (INIS)

    Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

    2008-01-01

    The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

  4. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  5. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hardy, Matthew T.; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.; McConkie, Thomas O.; Smith, David J.; Nepal, Neeraj

    2016-01-01

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10 13  cm −2 and no degradation in mobility (1760 cm 2 /V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE

  6. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hardy, Matthew T., E-mail: matthew.hardy.ctr@nrl.navy.mil; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J. [Electronics Science and Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375 (United States); McConkie, Thomas O.; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Nepal, Neeraj [Sotera Defense Solutions, 2200 Defense Hwy Suite 405, Crofton, Maryland 21114 (United States)

    2016-03-15

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

  7. Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

    Science.gov (United States)

    You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

    2013-06-28

    The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

  8. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

  9. Epitaxially grown strained pentacene thin film on graphene membrane.

    Science.gov (United States)

    Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

    2015-05-06

    Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

    Science.gov (United States)

    Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

    2017-10-01

    We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

  11. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    International Nuclear Information System (INIS)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O; Brunner, M

    2011-01-01

    Temperature sensitive thick films based on spinel-type NiMn 2 O 4 -CuMn 2 O 4 -MnCo 2 O 4 manganites with p- and p + -types of electrical conductivity and their multilayer p + -p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p + -conductive films. Some part of the p + -p structures were of high stability, the relative electrical drift being no more than 1 %.

  12. Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    G. H. JAIN

    2008-04-01

    Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

  13. Comparison of functional parameters of CsI:Tl crystals and thick films

    International Nuclear Information System (INIS)

    Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

    2013-01-01

    500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

  14. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  15. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  16. Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

    Directory of Open Access Journals (Sweden)

    Jin-Seok Lee

    2012-01-01

    Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

  17. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Science.gov (United States)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  18. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  19. A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

    International Nuclear Information System (INIS)

    Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

    1977-01-01

    The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

  20. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  1. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Science.gov (United States)

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  2. Comparison of different methods for measuring the passive film thickness on metals

    International Nuclear Information System (INIS)

    Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

    2016-01-01

    Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

  3. Thickness dependence of J_c (0) in MgB_2 films

    International Nuclear Information System (INIS)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-01-01

    Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

  4. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  5. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    TECS

    trations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity ... methanol, acetone, isopropanol and acetic acid, have been reported .... maximum sensitivity was obtained at an operating tem-.

  6. Microscopic image processing system for measuring nonuniform film thickness profiles: Image scanning ellipsometry

    International Nuclear Information System (INIS)

    Liu, A.H.; Plawsky, J.L.; Wayner, P.C. Jr.

    1993-01-01

    The long-term objective of this research program is to determine the stability and heat transfer characteristics of evaporating thin films. The current objective is to develop and use a microscopic image-processing system (IPS) which has two parts: an image analyzing interferometer (IAI) and an image scanning ellipsometer (ISE). The primary purpose of this paper is to present the basic concept of ISE, which is a novel technique to measure the two dimensional thickness profile of a non-uniform, thin film, from several nm up to several μm, in a steady state as well as in a transient state. It is a full-field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. The ISE was tested by measuring the thickness profile and the refractive index of a nonuniform solid film

  7. Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

    International Nuclear Information System (INIS)

    Khun, N.W.; Liu, E.

    2011-01-01

    Research highlights: → Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. → The graphitization of the films increased with increased film thickness. → The wear resistance of the films increased though their adhesion strength decreased. → The corrosion potentials of the films shifted to more negative values. → However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp 2 bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

  8. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  9. Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

    Science.gov (United States)

    Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

    2018-02-01

    The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

  10. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  11. Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

    International Nuclear Information System (INIS)

    Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

    2012-01-01

    The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

  12. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  13. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  14. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

    Directory of Open Access Journals (Sweden)

    Abraham Arias

    2018-01-01

    Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

  15. Microstructural and magnetic properties of L10 FePt-C (0 0 1) textured nanocomposite films grown on different intermediate layers

    International Nuclear Information System (INIS)

    Chen, J S; Chow, G M; Lim, B C; Hu, J F; Ding, Y F; Ju, G

    2008-01-01

    The FePt : C films with different volume fractions of carbon and different thicknesses were epitaxially grown on a CrRu(2 0 0) underlayer with Pt and MgO intermediate layers. The magnetic properties and microstructure of these FePt : C films were investigated. The FePt : C films grown on the Pt intermediate layer consisted of a continuous layer of FePt, with overlying granular FePt grains, while the FePt : C films grown on the MgO intermediate layer consisted of granular FePt : C layers with overlying granular grains. The formation of the overlying granular FePt grains was attributed to carbon diffusion to the surface which resulted in the second nucleation of FePt. The different interface energies and surface energies of FePt on Pt and MgO intermediate layers caused the formation of an initial continuous FePt layer on the Pt intermediate layer and initial granular FePt layers on the MgO intermediate layer. The coupling between the continuous FePt layer or the granular FePt layer and the overlying granular FePt grains resulted in simultaneous magnetization reversal and thus strong exchange coupling in FePt : C films.

  16. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  17. Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

    Science.gov (United States)

    Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

    2017-05-04

    An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

  18. Investigation on feasibility and detection limits for determination of coating film thickness by neutron activation analysis

    International Nuclear Information System (INIS)

    Yao Maoying; Xu Jiayun; Zhang Dida; Yang Zunyong; Yao Zhenqiang; Wang Mingqiu; Gao Dangzhong

    2010-01-01

    A method for the determination of coating film thickness by neutron activation was proposed in this paper. After Au, Al and Cu et al.films were activated with a Am-Be neutron source, the characteristic γ-rays emitted by the activated nuclides in the films were counted with a HPGe γ spectrometer. The detection limits of film thickness by using a nuclear reactor neutron source were deduced on the basis of the γ-ray counts and the Monte-Carlo simulated detection efficiencies. The possible detection limits are typically 4-5 orders of magnitude better than those by fluorescent X-ray method, which is currently widely used to determine coating film thickness. (authors)

  19. Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

    Science.gov (United States)

    Lugo, J. M.; Oliva, A. I.

    2017-02-01

    The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

  20. Characterization of the flooding in vertical tubes by means of the film thickness measurement

    International Nuclear Information System (INIS)

    Malandrone, M.; Mioliggi, L.; Panella, B.; Scorta, G.

    1992-01-01

    The air-water countercurrent flow up to the flooding transition in a vertical tube has been experimentally investigated by liquid film thickness measurement performed by means of an electrical two-wires conductance probe. The liquid film mean thickness, the probability density function, the spectral power density and the power of the signal have been derived for a wide range of air and water flow rate, and related to the flow pattern with particular attention to the flooding phenomena. (6 figures) (Author)

  1. A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

    Science.gov (United States)

    Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

    2017-10-21

    We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

  2. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Science.gov (United States)

    Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

    2011-01-01

    Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

  3. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Directory of Open Access Journals (Sweden)

    Gunter Hagen

    2011-08-01

    Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

  4. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

    2016-11-15

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

  5. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  6. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  7. Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

    Directory of Open Access Journals (Sweden)

    D. N. Chavan

    2011-02-01

    Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

  8. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Directory of Open Access Journals (Sweden)

    Guowen Ding

    2015-11-01

    Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  9. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  10. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  11. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    International Nuclear Information System (INIS)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

  12. The determination of the pressure viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2009-01-01

    The pressure viscosity coefficient is an indispensable property in the EHD lubrication of hard contacts, but often not known. A guess will easily lead to enormous errors in the film thickness. This paper describes a method to deduct this coefficient by adapting the value of the pressure viscosity

  13. Dependences of microstructure and critical current density on the thickness of YBa2Cu3O7-x film prepared by pulsed laser deposition on buffered Ni–W tape

    International Nuclear Information System (INIS)

    Xu, Da; Wang, Ying; Liu, Linfei; Li, Yijie

    2013-01-01

    YBa 2 Cu 3 O 7−x (YBCO) films with different thicknesses were fabricated on buffered Ni–W tapes by pulsed laser deposition. The thickness dependences of microstructure and critical current density (J c ) of YBCO film were systematically investigated. The microstructure and surface morphology of YBCO film were characterized by X-ray diffraction, optical microscopy, field emission scanning electron microscopy and atomic force microscopy. And the critical current (I c ) of YBCO film was measured by the conventional four-probe method. We found that the full width at half maximum values of both omega and phi scan rocking curves, the content of a-axis oriented grain, and surface roughness of YBCO film all increased with augmenting the thickness of YBCO film. It was also found that with increasing the thickness of YBCO film from 0.3 μm to 1.5 μm, the I c of YBCO film increased from 72 A/cm to 248 A/cm and yet J c of YBCO film decreased from 2.1 × 10 6 A/cm 2 to 1.6 × 10 6 A/cm 2 . Our results indicated that the microstructure and J c of YBCO film were largely dependent on the thickness of YBCO film under the optimized deposition condition of substrate temperature. - Highlights: ► YBa 2 Cu 3 O 7−x (YBCO) films with different thicknesses were grown on metallic tapes. ► The texture and critical current were dependent on the thickness of YBCO film. ► Thickness effect was weakened by fabricating YBCO film layer by layer

  14. Quantifying Local Thickness and Composition in Thin Films of Organic Photovoltaic Blends by Raman Scattering

    KAUST Repository

    Rodríguez-Martínez, Xabier

    2017-07-06

    We report a methodology based on Raman spectroscopy that enables the non-invasive and fast quantitative determination of local thickness and composition in thin films (from few monolayers to hundreds of nm) of one or more components. We apply our methodology to blends of organic conjugated materials relevant in the field of organic photovoltaics. As a first step, we exploit the transfer-matrix formalism to describe the Raman process in thin films including reabsorption and interference effects of the incoming and scattered electric fields. This allows determining the effective solid-state Raman cross-section of each material by studying the dependence of the Raman intensity on film thickness. These effective cross sections are then used to estimate the local thickness and composition in a series of polymer:fullerene blends. We find that the model is accurate within ±10 nm in thickness and ±5 vol% in composition provided that (i) the film thickness is kept below the thickness corresponding to the first maximum of the calculated Raman intensity oscillation; (ii) the materials making up the blend show close enough effective Raman cross-sections; and (iii) the degree of order attained by the conjugated polymer in the blend is similar to that achieved when cast alone. Our methodology opens the possibility to make quantitative maps of composition and thickness over large areas (from microns to centimetres squared) with diffraction-limited resolution and in any multi-component system based thin film technology.

  15. Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

    International Nuclear Information System (INIS)

    Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2013-01-01

    Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

  16. Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Götsch, Thomas; Mayr, Lukas [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Stöger-Pollach, Michael [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, A-1040 Vienna (Austria); Klötzer, Bernhard [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria); Penner, Simon, E-mail: simon.penner@uibk.ac.at [Institute of Physical Chemistry, Universität Innsbruck, A-6020 Innsbruck (Austria)

    2015-03-15

    Highlights: • Preparation of unsupported yttrium-stabilized zirconia films. • Control of ordering and epitaxy by temperature of deposition template. • Adjustment of film defectivity by deposition and post-oxidation temperature. • Reproducibility of target stoichiometry in the deposited films. • Lateral and vertical chemical homogeneity. - Abstract: Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films (“YSZ”, 8 mol% Y{sub 2}O{sub 3}) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

  17. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  18. Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

    Science.gov (United States)

    Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

    2016-09-15

    Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

  19. Film thickness in gas-liquid two-phase flow, (2)

    International Nuclear Information System (INIS)

    Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

    1977-01-01

    The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

  20. Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Elanchezhiyan, J.; Bhuvana, K.P.; Gopalakrishnan, N.; Balasubramanian, T.

    2008-01-01

    In this paper, we have presented the surface effect of the substrates on Mn doped ZnO (Zn 1-x Mn x O) thin films grown on Si(1 0 0) and sapphire [i.e. Al 2 O 3 (0 0 0 1)] by RF magnetron sputtering. These grown films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and vibrating sample magnetometer (VSM) to know its structural, optical and magnetic properties. All these properties have been found to be strongly influenced by the substrate surface on which the films have been deposited. The XRD results show that the Mn doped ZnO films deposited on Si(1 0 0) exhibit a polycrystalline nature whereas the films on sapphire substrate have only (0 0 2) preferential orientations indicating that the films are single crystalline. The studies of room temperature PL spectra reveal that the Zn 1-x Mn x O/Si(1 0 0) system is under severe compressive strain while the strain is almost relaxed in Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system. It has been observed from VSM studies that Zn 1-x Mn x O/Al 2 O 3 (0 0 0 1) system shows ferromagnetic nature while the paramagnetic behaviour observed in Zn 1-x Mn x O/Si(1 0 0) system

  1. Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

    Science.gov (United States)

    Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-01-08

    Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

  2. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  3. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  4. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  5. Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

    International Nuclear Information System (INIS)

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-01-01

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  6. Low-temperature technique for thick film resist stabilization and curing

    Science.gov (United States)

    Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

    1999-06-01

    For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

  7. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    OpenAIRE

    Bakrania, Smitesh D.; Wooldridge, Margaret S.

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition meth...

  8. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  9. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

    2015-12-30

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

  10. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.

    2015-01-01

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

  11. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  12. Texture change through film thickness and off-axis accommodation of (0 0 2) planes

    International Nuclear Information System (INIS)

    Shetty, A.R.; Karimi, A.

    2011-01-01

    We present our recent experimental results on the formation of off-axis texture and crystallographic tilting of crystallites that take place in thin film of transition metal nitrides. For this purpose, the microstructural development of TiAlN film was studied, specially the change in texture with film thickness. Fiber texture was measured using θ-2θ and pole figure X-ray diffraction (XRD), while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the microstructure and changes in texture with thickness. The sin 2 ψ method was applied to determine the stresses on (1 1 1) and (0 0 2) plane. With deposition parameters chosen, the growth texture mechanism is discussed in three different stages of film growth. Surface energy minimization at low thickness leads to the development of (0 0 2) orientation. On the other hand, the competitive growth promotes the growth of (1 1 1) planes parallel to film surface at higher thickness. However, contrary to the prediction of growth models, the (0 0 2) grains are not completely overlapped by (1 1 1) grains at higher thickness. Rather the (0 0 2) grains still constitute the surface, but are tilted away from the substrate normal showing substantial in-plane alignment to allow the (1 1 1) planes remain parallel to film surface. Intrinsic stress along (1 1 1) and (0 0 2) shows a strong dependence with preferred orientation. The stress level in (0 0 2) grains which was compressive at low thickness changes to tensile at higher thickness. This change in the nature of stress allows the (0 0 2) planes to tilt away in order to promote the growth of 〈1 1 1〉 parallel to film normal and to minimize the overall energy of system due to high compressive stress stored in the (1 1 1) grains. The change in surface morphology with thickness was observed using SEM. An increase in surface roughness with film thickness was observed which indicates the development of (1 1 1) texture parallel to film

  13. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

  14. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

  15. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

  16. Quantum dot sensitized solar cells: Light harvesting versus charge recombination, a film thickness consideration

    Science.gov (United States)

    Wang, Xiu Wei; Wang, Ye Feng; Zeng, Jing Hui; Shi, Feng; Chen, Yu; Jiang, Jiaxing

    2017-08-01

    Sensitizer loading level is one of the key factors determined the performance of sensitized solar cells. In this work, we systemically studied the influence of photo-anode thicknesses on the performance of the quantum-dot sensitized solar cells. It is found that the photo-to-current conversion efficiency enhances with increased film thickness and peaks at around 20 μm. The optimal value is about twice as large as the dye counterparts. Here, we also uncover the underlying mechanism about the influence of film thickness over the photovoltaic performance of QDSSCs from the light harvesting and charge recombination viewpoint.

  17. Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates

    Science.gov (United States)

    Cahay, M.; Garre, K.; Wu, X.; Poitras, D.; Lockwood, D. J.; Fairchild, S.

    2006-06-01

    Thin films of lanthanum monosulfide (LaS) have been deposited on Si (100) substrates by pulsed laser deposition. The films are golden yellow in appearance with a mirrorlike surface morphology and a sheet resistance around 0.1 Ω/□, as measured using a four-probe measurement technique. The thin films are characterized by atomic force microscopy (AFM), x-ray diffraction (XRD) analysis, high resolution transmission electron microscopy (HRTEM), ellipsometry, and Raman spectroscopy. The root-mean-square variation of (1 μm thick) film surface roughness measured over a 1 μm2 area by AFM was found to be 1.74 nm. XRD analysis of fairly thick films (micrometer size) reveals the growth of the cubic rocksalt structure with a lattice constant of 5.863(7) A˚, which is close to the bulk LaS value. HRTEM images reveal that the films are comprised of nanocrystals separated by regions of amorphous material. Two beam bright field TEM images show that there is a strain contrast in the Si substrate right under the interface with the LaS film and penetrating into the Si substrate. This suggests that there is an initial epitaxial-like growth of the LaS film on the Si substrate that introduces a strain as a result of the 8% lattice mismatch between the film and substrate. Ellipsometry measurements of the LaS films are well characterized by a Drude-Lorentz model from which an electron concentration of about 2.52×1022 cm-3 and a mobility around 8.5 cm2/V s are derived. Typical crystalline LaS features were evident in Raman spectra of the films, but the spectra also revealed their disordered (polycrystalline) nature.

  18. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  19. Anomalous size effect in conductivity of Bi films of small thickness

    International Nuclear Information System (INIS)

    Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

    1995-01-01

    Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

  20. Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

    International Nuclear Information System (INIS)

    Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

    2007-01-01

    Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

  1. Thick-film effects in the oxidation and hydriding of zirconium alloys

    International Nuclear Information System (INIS)

    Johnson, A.B. Jr.

    1989-08-01

    One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

  2. Ceramic thick film humidity sensor based on MgTiO3 + LiF

    International Nuclear Information System (INIS)

    Kassas, Ahmad; Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand; Lakiss, Hassan; Hamieh, Tayssir

    2013-01-01

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO 3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO 3 /LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

  3. Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

    Energy Technology Data Exchange (ETDEWEB)

    Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

    2013-10-15

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

  4. Structural, morphological and electronic properties of pulsed laser grown Eu2O3 thin films

    Science.gov (United States)

    Kumar, Sandeep; Prakash, Ram; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Herein, we report the growth, structural, morphological and electronic properties of Europium sesquioxide (Eu2O3) thin films on Si [1 0 0] substrate using pulsed laser deposition technique. The films were deposited at ˜750 °C substrate temperature while the oxygen partial pressure (OPP) was varied (vacuum,˜1 mTorr, ˜10 mTorr and ˜300 mTorr). X-ray diffraction results confirm the single phase cubic structure of the film grown at ˜300 mTorr. The XRD results are also supported by the Raman's spectroscopy results. Eu-3d XPS core level spectra confirms the dominant contributions from the "3+" states of Eu in the film.

  5. Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

    International Nuclear Information System (INIS)

    Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

    2004-01-01

    Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

  6. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  7. Properties of CoSb{sub 3} films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Christen, H M; Mandrus, D G; Norton, D P; Boatner, L A; Sales, B C

    1997-07-01

    Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

  8. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO 2 films thermally grown using ion beam analyses

    Science.gov (United States)

    Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.

    2012-02-01

    The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.

  9. Thickness Measurement of V2O5 Nanometric Thin Films Using a Portable XRF

    Directory of Open Access Journals (Sweden)

    Fabio Lopes

    2016-01-01

    Full Text Available Nanometric thin films have always been chiefly used for decoration; however they are now being widely used as the basis of high technology. Among the various physical qualities that characterize them, the thickness strongly influences their properties. Thus, a new procedure is hereby proposed and developed for determining the thickness of V2O5 nanometric thin films deposited on the glass surface using Portable X-Ray Fluorescence (PXRF equipment and the attenuation of the radiation intensity Kα of calcium present in the glass. It is shown through the present paper that the radiation intensity of calcium Kα rays is proportional to film thickness in nanometric films of vanadium deposited on the glass surface.

  10. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-03

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  11. Investigation of coercivity for electroplated Fe-Ni thick films

    Science.gov (United States)

    Yanai, T.; Eguchi, K.; Koda, K.; Kaji, J.; Aramaki, H.; Takashima, K.; Nakano, M.; Fukunaga, H.

    2018-05-01

    We have already reported Fe-Ni firms with good soft magnetic properties prepared by using an electroplating method. In our previous studies, we prepared the Fe-Ni films from citric-acid-based baths (CA-baths) and ammonium-chloride-based ones (AC-baths), and confirmed that the coercivity for the AC-baths was lower than that for the CA-baths. In the present study, we investigated reasons for the lower coercivity for the AC-baths to further improve the soft magnetic properties. From an observation of magnetic domains of the Fe22Ni78 films, we found that Fe22Ni78 film for AC-bath had a magnetic anisotropy in the width direction, and also found that the coercivity in the width direction was lower than the longitudinal one for the AC-bath. As an annealing for a stress relaxation in the films reduced the difference in the coercivity, we considered that the anisotropy is attributed to the magneto-elastic effect.

  12. The properties of TiN ultra-thin films grown on SiO{sub 2} substrate by reactive high power impulse magnetron sputtering under various growth angles

    Energy Technology Data Exchange (ETDEWEB)

    Shayestehaminzadeh, S., E-mail: ses30@hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tryggvason, T.K. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Karlsson, L. [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany); Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Gudmundsson, J.T. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); University of Michigan-Shanghai Jiao Tong University, University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

    2013-12-02

    Thin TiN films were grown on SiO{sub 2} by reactive high power impulse magnetron sputtering (HiPIMS) and conventional dc magnetron sputtering (dcMS) while varying the angle between the target and the substrate surface from 0° (on-axis growth) to 90° (off-axis growth). Surface morphology and structural characterization were carried out using X-ray diffraction and reflection methods and the film properties were compared. The dcMS process shows higher growth rate than the HiPIMS process for on-axis grown films but the dcMS growth rate drops drastically for off-axis growth while the HiPIMS growth rate decreases slowly with increased angle between target and substrate for off-axis growth and becomes comparable to the dcMS growth rate. The dcMS grown films exhibit angle dependence in the density and surface roughness while the HiPIMS process creates denser and smoother films that are less angle dependent in all aspects. It was observed that the HiPIMS grown films remain poly-crystalline for all angles of rotation while the dcMS grown films are somewhat amorphous after 60°. The [111] and [200] grain sizes are comparable to the total film thickness in the HiPIMS grown films for all angles of rotation. In the case of dcMS, the [111], [200] and [220] grain sizes are roughly of the same size and much smaller than the total thickness for all growth angles except at 60° and higher. - Highlights: • TiN films were grown on SiO{sub 2} by HiPIMS and dcMS under various growth angles. • Influence of growth angle α = 0–90° on deposition rate and film quality was studied. • The HiPIMS process produces denser and smoother films for all growth angles. • At α = 0°, the growth rate of HiPIMS is 25% of dcMS while it is 50% at 90°. • The HiPIMS grown films remain poly-crystalline for all growth angles.

  13. Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques

    Energy Technology Data Exchange (ETDEWEB)

    Matei, A., E-mail: andreeapurice@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Laser techniques MAPLE and PLD can successfully be used to produce LDHs thin films. Black-Right-Pointing-Pointer Hydration treatments of the PLD and MAPLE deposited films lead to the LDH reconstruction effect. Black-Right-Pointing-Pointer The Ni retention from aqueous solution occurs in the films via a dissolution-reconstruction mechanism. Black-Right-Pointing-Pointer The films are suitable for applications in remediation of contaminated drinking water or waste waters. - Abstract: Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO{sub 3}){sub 2} aqueous solutions with Ni concentrations of 10{sup -3}% (w/w) (1 g/L) and 10{sup -4}% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.

  14. Influence of cement film thickness on the retention of implant-retained crowns.

    Science.gov (United States)

    Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

    2013-12-01

    The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

  15. Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

    Directory of Open Access Journals (Sweden)

    Kuo-Ching Kuo

    2007-04-01

    Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

  16. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    International Nuclear Information System (INIS)

    McLeod, K.; Kumar, S.; Dutta, N.K.; Smart, R.St.C.; Voelcker, N.H.; Anderson, G.I.

    2010-01-01

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  17. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Energy Technology Data Exchange (ETDEWEB)

    McLeod, K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Kumar, S., E-mail: sunil.kumar@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Dutta, N.K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Smart, R.St.C. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, SA 5095 (Australia); Voelcker, N.H. [School of Chemistry, Physics and Earth Sciences, Flinders University of South Australia, GPO Box 2100, Adelaide 5001 (Australia); Anderson, G.I. [School of Veterinary Science, University of Adelaide, Adelaide, SA 5005 (Australia)

    2010-09-15

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 {mu}m in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  18. Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Wei-Kai Wang

    2017-01-01

    Full Text Available Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111, and Si(100 substrates by high-temperature pulsed laser deposition (PLD. The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD, photoluminescence (PL, atomic force microscopy (AFM, transmission electron microscopy (TEM, and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111, and Si(100 exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100 substrate due to the highly directional energetic precursor migration on the substrate’s surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 °C operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga–Si etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

  19. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  20. The structure and composition of lithium fluoride films grown by off-axis pulsed laser ablation

    International Nuclear Information System (INIS)

    Henley, S.J.; Ashfold, M.N.R.; Pearce, S.R.J.

    2003-01-01

    Alkali halide coatings have been reported to act as effective dipole layers to lower the surface work function and induce a negative electron affinity of diamond surfaces. Here, the results of the analysis of films grown on silicon and quartz substrates by 193 nm pulsed laser ablation from a commercially available sintered disk of LiF are reported. The morphology, composition and crystallinity of films grown are examined and suitable deposition parameters for optimising the growth are suggested. The ablation was shown to be very efficient at removing a large amount of material from the target, even at relatively low fluence. The morphology of the films produced was poor, however, with a high density of asperities categorised as either particulates produced by exfoliation, or as droplets produced by hydrodynamic sputtering. An improved morphology with smaller droplets and fewer particulates could be produced by mounting the substrate at an angle of 65 deg. to the axis of the ablation plume and using a fluence close to the measured ablation threshold of 1.2±0.1 J/cm 2 . The elemental composition of the films was shown to be indistinguishable from that of bulk LiF, despite evidence for significant recondensation of Li back onto the target. Films containing crystal grains oriented with the direction normal to the substrate surface were observed at substrate temperatures in excess of 300 deg. C. An improved extent of orientation was observed on the quartz substrates

  1. Impedance of thin film cathodes: thickness and current collector dependence

    NARCIS (Netherlands)

    Boukamp, Bernard A.; Hildenbrand, N.; Bouwmeester, Henricus J.M.; Blank, David H.A.

    2015-01-01

    The influence of the layer thickness of mixed ionic–electronic conducting (MIEC) cathodes and the type of noble metal current collector on the apparent surface exchange resistance is studied with impedance spectroscopy. The impedance data is analyzed with the ‘General Finite Length Diffusion’

  2. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  3. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  4. Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

    International Nuclear Information System (INIS)

    Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

    2017-01-01

    Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

  5. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    International Nuclear Information System (INIS)

    Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

    2014-01-01

    Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

  6. Humidity sensing properties of WO3 thick film resistor prepared by screen printing technique

    International Nuclear Information System (INIS)

    Garde, Arun S

    2014-01-01

    Highlights: • Polycrystalline WO 3 Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm −1 shows stretching vibrations attributed to W-OH of adsorbed H 2 O. • Absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO 3 thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm −1 clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds (i.e. ν [W-O inter -W]). The peak located at 983 cm −1 belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO 3 thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO 3 film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO 3 film sensors have been evaluated

  7. Photoluminescence properties of ZnO thin films grown by using the hydrothermal technique

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Jang, Leewoon; Jeon, Juwon; Kim, Myoung; Kim, Jinsoo; Lee, Inhwan; Kwak, Joonseop; Lee, Jaejin

    2010-01-01

    The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 .deg. C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 ± 0.5 meV from the temperature dependent quenching of the integral intensities.

  8. Properties of second phase (BaSnO3, Sn) added-YBCO thick films

    International Nuclear Information System (INIS)

    Ban, E.; Matsuoka, Y.

    1997-01-01

    The improvement of the critical current density J c of YBCO thick films has been attempted by adding BaSnO 3 powder and ultrafine Sn particles, whose diameter is about 2 μm and 7 x 10 -2 μm, respectively. It was found that the addition of a small amount of these particles was effective for the enhancement of J c of thick films prepared by a liquid-phase processing method. The 1 wt.% BaSnO 3 films fired at T s =1040-1060 C and the 3 wt.% Sn films (T s =1030-1060 C) showed J c values (77 K, 0 T) of about 2.1-2.4 x 10 3 Acm -2 and 3.1-3.5 x 10 3 Acm -2 , respectively, as compared to 2.0 x 10 3 Acm -2 for the undoped films. (orig.)

  9. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2012-09-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  10. Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

    International Nuclear Information System (INIS)

    Murthy, L.C.S.; Rao, K.S.R.K.

    1999-01-01

    A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200-600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1.56-5.72x10 -3 Ω-cm, 128-189 Ω/□, 1.6-3.9x10 21 cm -3 and 0.3-3 cm 2 /Vs, respectively for varying film thickness. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2.20-2.42 eV. These films have transmittance around 77% and average reflectance is below 2.6% in the spectral range 350-850 nm. The films are n-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K. (author)

  11. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  12. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  13. Effect of the niobium additions in the passive films potentiostatically grown in a sulphate medium

    International Nuclear Information System (INIS)

    Kuri, S.E.; Martins, M.; D'Alkaine, C.V.

    1984-01-01

    The stability of passive films potentiostatically grown on stainless steel electrodes was studied in a 2 N sulfuric acid. The effect of Niobium contents in the base metal was considered. The reactivation time was measured using the method of Potential Decay Measurements under Open-Circuit Conditions after electrochemical aging in the passivity region, and its influence on the surface oxidation states, was discussed. (Author) [pt

  14. Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature

    International Nuclear Information System (INIS)

    Choi, Sun Hee; Kim, Joosun; Yoon, Young Soo

    2005-01-01

    Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films

  15. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  16. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  17. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    Foerster, H.

    1983-01-01

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  18. Sensor for thickness measurement of a liquid metal film

    International Nuclear Information System (INIS)

    Blanc, R.

    1984-04-01

    Description, calibration and measuring method of a sensor for the measure of thin liquid metal depths in a temperature range of 0-500 0 C and for shift frequencies from 0 to 100 Hz; these sensors are based on the principle of induction-coil impedance variation, as a function of the thickness of an electrical conductor matter placed in the coil magnetic field [fr

  19. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  20. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    International Nuclear Information System (INIS)

    Cao Yu; Li Xiangyou; Zeng Xiaoyan

    2008-01-01

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

  1. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  2. Persistent quantum-size effect in aluminum films up to twelve atoms thick

    International Nuclear Information System (INIS)

    Boettger, J.C.

    1996-01-01

    Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

  3. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    International Nuclear Information System (INIS)

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

    2017-01-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

  4. The effect of wet film thickness on VOC emissions from a finishing varnish.

    Science.gov (United States)

    Lee, Shun-Cheng; Kwok, Ngai-Hong; Guo, Hai; Hung, Wing-Tat

    2003-01-20

    Finishing varnishes, a typical type of oil-based varnishes, are widely used to shine metal, wood trim and cabinet surfaces in Hong Kong. The influence of wet film thickness on volatile organic compound (VOC) emissions from a finishing varnish was studied in an environmental test chamber. The varnish was applied on an aluminium foil with three different wet film thickness (35.2, 69.9 and 107.3 microm). The experimental conditions were 25.0 degrees C, 50.0% relative humidity (RH) with an air exchange rate of 0.5 h(-1). The concentrations of the major VOCs were monitored for the first 10 h. The air samples were collected by canisters and analysed by gas chromatography/mass selective detector (GC/MSD). Six major VOCs including toluene, chlorobenzene, ethylbenzene, m,p-xylene, o-xylene and 1,3,5-trimethylbenzene were identified and quantified. Marked differences were observed for three different film thicknesses. VOC concentrations increased rapidly during the first few hours and then decreased as the emission rates declined. The thicker the wet film, the higher the VOC emissions. A model expression included an exponentially decreasing emission rate of varnish film. The concentration and time data measured in the chamber were used to determine the parameters of empirical emission rate model. The present work confirmed that the film thickness of varnish influenced markedly the concentrations and emissions of VOCs. Copyright 2002 Elsevier Science B.V.

  5. Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

    Science.gov (United States)

    Muneshwar, Triratna; Cadien, Ken

    2018-03-01

    In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

  6. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

    2010-01-01

    In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

  7. The effect of film thickness and molecular structure on order and disorder in thin films of compositionally asymmetric block copolymers

    Science.gov (United States)

    Mishra, Vindhya

    Directed self-assembly of thin film block copolymers offer a high throughput-low cost route to produce next generation lithographic devices, if one can bring the defect densities in the self assembled patterns below tolerance limits. However, the ability to control the nanoscale structure or morphology in thin film block copolymers presents challenges due to confinement effects on equilibrium behavior. Using structure characterization techniques such as grazing incidence small angle X-ray scattering (GISAXS), transmission electron and atomic force microscopy as well as self-consistent field theory, we have investigated how film thickness, annealing temperature and block copolymer structure affects the equilibrium behavior of asymmetric block copolymer films. Our studies have revealed the complicated dependence of order-disorder transitions, order-order transitions and symmetry transitions on film thickness. We found that the thickness dependent transition in the packing symmetry of spherical morphology diblock copolymers can be suppressed by blending with a small amount of majority block homopolymer, which allowed us to resolve the driving force behind this transition. Defect densities in, and the order-disorder transition temperature of, thin films of graphoepitaxially aligned diblock copolymer cylinders showed surprising sensitivity to the microdomain spacing. Methods to mitigate defect formation in thin films have been identified. The challenge of quantification of structural order in these systems was overcome using GISAXS, which allowed us to study the phenomena of disordering in two and three dimensions. Through studies on block copolymers which exhibit an order-order transition in bulk, we found that that subtle differences in the packing frustration of the spherical and cylindrical phases as well as the higher configurational entropy of free chain ends at the surface can drive the equilibrium configuration in thin films away from the stable bulk structure

  8. Thick Nano-Crystalline Diamond films for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Dawedeit, Christoph [Technical Univ. of Munich (Germany)

    2010-06-30

    This Diplomarbeit deals with the characterization of 9 differently grown diamond samples. Several techniques were used to determine the quality of these specimens for inertial confinement fusion targets. The quality of chemical vapor deposition diamond is usually considered in terms of the proportion of sp3-bonded carbon to sp2-bonded carbon in the sample. For fusion targets smoothness, Hydrogen content and density of the diamonds are further important characteristics. These characteristics are analyzed in this thesis. The research for thesis was done at Lawrence Livermore National Laboratory in collaboration with the Fraunhofer Institut für angewandte Festkörperphysik Freiburg, Germany. Additionally the Lehrstuhl fuer Nukleartechnik at Technical University of Germany supported the work.

  9. Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

    International Nuclear Information System (INIS)

    Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

    2003-01-01

    An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

  10. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  11. A method for reducing the sloughing of thick blood films for malaria diagnosis.

    Science.gov (United States)

    Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

    2013-07-08

    The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM

  12. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Science.gov (United States)

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  13. Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

    Science.gov (United States)

    Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

    2016-11-01

    Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in 1 bar of CO at 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

  14. Interaction domains in high performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  15. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

    2009-01-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  16. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    Science.gov (United States)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  17. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  18. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    Science.gov (United States)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  19. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  20. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    Science.gov (United States)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  1. Extended defects in epitaxial Sc2O3 films grown on (111) Si

    International Nuclear Information System (INIS)

    Klenov, Dmitri O.; Edge, Lisa F.; Schlom, Darrell G.; Stemmer, Susanne

    2005-01-01

    Epitaxial Sc 2 O 3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc 2 O 3 and Si. The ∼10% lattice mismatch between Si and Sc 2 O 3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2 Si and line directions parallel to Si . A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice

  2. High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

    Energy Technology Data Exchange (ETDEWEB)

    Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

    2006-05-04

    The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

  3. Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

    International Nuclear Information System (INIS)

    Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

    1997-01-01

    The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

  4. Effects of rework on adhesion of Pb-In soldered gold thick films

    International Nuclear Information System (INIS)

    Gehman, R.W.; Becka, G.A.; Losure, J.A.

    1982-02-01

    The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

  5. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  6. Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

    2010-10-01

    This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

  7. Critical heat flux enhancement regarding to the thickness of graphene films under pool boiling

    International Nuclear Information System (INIS)

    Kim, Jin Man; Park, Hyun Sun; Park, Youngjae; Kim, Hyungdae; Kim, Dong Eok; Kim, Moo Hwan; Ahn, Ho Seon

    2014-01-01

    The large thermal conductivity of the graphene films inhibits the formation of hot spots, thereby increasing the CHF. An infrared high-speed visualization showed graphene effect on boiling characteristics during operation. The graphene-coated heater showed an increase in BHT and CHF. As the thickness of the graphene films increased, the CHF also increased up to an asymptotic limit when the graphene layer was approximately 150 nm thick. The increased BHT was explained by the slight decrease in the wettability and the folded edges of the RGO flakes, which led to a decrease in the diameter of the departing bubbles, a larger bubble generation frequency, and an increase in the areal density of the bubble nucleation sites. The increase in the CHF was explained by considering the thermal activity of the graphene films, and the dependence thereof on the thickness and thermal properties of the layer, which was calculated based on high-speed IR visualization data

  8. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 μW at 1 g root mean square acceleration. We also...... characterize the harvester performance when only one of the PZT layers is used while the other is left open or short circuit....

  9. Laser Cutting of Thick Diamond Films Using Low-Power Laser

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

    2000-02-01

    Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

  10. The effect of different thickness alumina capping layers on the final morphology of dewet thin Ni films

    Science.gov (United States)

    White, Benjamin C.; Behbahanian, Amir; Stoker, T. McKay; Fowlkes, Jason D.; Hartnett, Chris; Rack, Phillip D.; Roberts, Nicholas A.

    2018-03-01

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cost effective fashion with control over size and spacing is desired, but difficult to do. This work presents a scalable method for altering the radius and pitch distributions of nickel nanoparticles. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles with no noticeable difference in final morphology with increased capping layer thickness. The differences in carbon nanotube mats grown, on the uncapped sample and one of the capped samples, is also presented here, with a more dense mat being present for the capped case.

  11. Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2017-05-15

    Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

  12. Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

    International Nuclear Information System (INIS)

    Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Kolesnikov, A. V.; Sokolov, L. V.

    2007-01-01

    Plastically relaxed GeSi films with the Ge fraction equal to 0.29-0.42 and thickness as large as 0.5 μm were grown on Si (001) substrates using the low-temperature (350 deg. C) buffer Si layer and Sb as a surfactant. It is shown that introduction of Sb that smoothens the film surface at the stage of pseudomorphic growth lowers the density of threading dislocations in the plastically relaxed heterostructure by 1-1.5 orders of magnitude and also reduces the final roughness of the surface. The root-mean-square value of roughness smaller than 1 nm was obtained for a film with the Ge content of 0.29 and the density of threading dislocations of about 10 6 cm -2 . It is assumed that the effect of surfactant is based on the fact that the activity of surface sources of dislocations is reduced in the presence of Sb

  13. Infrared reflectance of GaN films grown on Si(001) substrates

    International Nuclear Information System (INIS)

    Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

    2001-01-01

    GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

  14. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

    2013-11-15

    We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

  15. Electrochemical Impedance Spectroscopic Analysis of RuO2 Based Thick Film pH Sensors

    International Nuclear Information System (INIS)

    Manjakkal, Libu; Djurdjic, Elvira; Cvejin, Katarina; Kulawik, Jan; Zaraska, Krzysztof; Szwagierczak, Dorota

    2015-01-01

    The conductimetric interdigitated thick film pH sensors based on RuO 2 were fabricated and their electrochemical reactions with solutions of different pH values were studied by electrochemical impedance spectroscopy (EIS) technique. The microstructural properties and composition of the sensitive films were examined by scanning electron microscopy, X-ray energy dispersive spectroscopy and Raman spectroscopy. The EIS analysis of the sensor was carried out in the frequency range 10 mHz–2 MHz for pH values of test solutions 2–12. The electrical parameters of the sensor were found to vary with changing pH. The conductance and capacitance of the film were distinctly dependent on pH in the low frequency range. The Nyquist and Bode plots derived from the impedance data for the metal oxide thick film pH sensor provided information about the underlying electrochemical reactions

  16. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    Energy Technology Data Exchange (ETDEWEB)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

    2011-04-01

    Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

  17. Realization of hexagonal barium ferrite thick films on Si substrates using a screen printing technique

    International Nuclear Information System (INIS)

    Chen Yajie; Smith, Ian; Geiler, Anton L; Vittoria, Carmine; Harris, Vincent G; Zagorodnii, Volodymyr; Celinski, Zbigniew

    2008-01-01

    Hexagonal barium ferrite thick films (50-200 μm) have been deposited on Si and Al 2 O 3 /Si substrates using a screen printing technique. X-ray diffractometry, scanning electron microscopy and magnetometry were used to characterize and correlate the ferrite films' microstructure and magnetic properties. The experiments indicated that an Al 2 O 3 underlayer was effective in preventing silicon diffusion into the barium ferrite films during a final sintering treatment at temperatures above 1100 deg. C. A two-stage sintering process allowed a reasonable tradeoff between mechanical and magnetic properties. This work reveals the feasibility of fabrication of thick ferrite films on large substrates (up to 25 mm in diameter) for future planar microwave devices compatible with semiconductor integrated circuits processing

  18. Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

    2015-09-30

    Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

  19. Application of X-ray fluorescence (WDXRF): thickness and chemical composition determination of thin films

    International Nuclear Information System (INIS)

    Scapin, Valdirene de Oliveira.

    2004-01-01

    In this work a procedure is described for thickness and quantitative chemical composition of thin films by wavelength dispersion X-ray fluorescence (WDXRF) using Fundamental Parameters method. This method was validated according to quality assurance standard and applied sample Al, Cr, TiO2, Ni, ZrO2 (single thickness) and Ni/Cr (double thickness) on glass; Ni on steel and metallic zinc and TiO2 on metallic iron (single thickness), all the sample were prepared for physical deposition of vapor (PVD). The thickness had been compared with Absorption (FRX-A) and Rutherford Backscattering Spectrometry (RBS) methods; the result showed good efficiency of the fundamental parameters method. Sample structural characteristics analyzed by X ray diffraction (XRD) showed any influence in the thickness determinations. (author)

  20. Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

    1994-01-01

    The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

  1. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  2. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  3. Thin film thickness measurement error reduction by wavelength selection in spectrophotometry

    International Nuclear Information System (INIS)

    Tsepulin, Vladimir G; Perchik, Alexey V; Tolstoguzov, Victor L; Karasik, Valeriy E

    2015-01-01

    Fast and accurate volumetric profilometry of thin film structures is an important problem in the electronic visual display industry. We propose to use spectrophotometry with a limited number of working wavelengths to achieve high-speed control and an approach to selecting the optimal working wavelengths to reduce the thickness measurement error. A simple expression for error estimation is presented and tested using a Monte Carlo simulation. The experimental setup is designed to confirm the stability of film thickness determination using a limited number of wavelengths

  4. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    Energy Technology Data Exchange (ETDEWEB)

    Santi, L. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Bohn, F. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Viegas, A.D.C. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Durin, G. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Magni, A. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Bonin, R. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Zapperi, S. [Istituto dei Sistemi Complessi-CNR, Roma (Italy); Sommer, R.L. [Centro Brasileiro de Pesquisas Fisicas, 22290-180, Rio de Janeiro, RJ (Brazil)]. E-mail: sommer@cbpf.br

    2006-10-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 22.5-x}B{sub x} (with x=4 and 9) in the thickness range 20nm-5{mu}m. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents {tau}=1.25+/-0.05 and {alpha}=1.60+/-0.05, respectively.

  5. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  6. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  7. Effect of diffusion on percolation threshold in thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2009-01-01

    Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

  8. Investigation of the effect of different carbon film thickness on the exhaust valve

    Science.gov (United States)

    Karamangil, M. I.; Avci, A.; Bilal, H.

    2008-03-01

    Valves working under different loads and temperatures are the mostly forced engine elements. In an internal combustion engine, pressures and temperatures affecting on the valves vary with fuel type and the combustion characteristics of the fuel. Consequently, valves are exposed to different dynamic and thermal stress. In this study, stress distributions and temperature profiles on exhaust valve are obtained depending on different carbon film thickness. It is concluded that heat losses and valve temperatures decrease and valve surfaces are exposed to less thermal shocks with increasing carbon film thickness.

  9. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  10. Effect of Film Thickness and Physical Aging on “Intrinsic” Gas Permeation Properties of Microporous Ethanoanthracene-Based Polyimides

    KAUST Repository

    Ma, Xiaohua; Pinnau, Ingo

    2018-01-01

    g–1, respectively. Fresh films showed promising gas separation performance with very high gas permeabilities and moderate gas-pair selectivities, which were both strongly dependent on film thickness. The results obtained in this study shed more light

  11. Effect of nano-silver hydrogel coating film on deep partial thickness scald model of rabbit

    OpenAIRE

    Peng Xi; Yan Li; Xiaojin Ge; Dandan Liu; Mingsan Miao

    2018-01-01

    Objective: Observing the effect of nano-silver hydrogel coating film on deep partial thickness scald model of rabbit. Method: We prepared boiling water scalded rabbits with deep II degree scald models and applied high, medium and low doses of nano-silver hydrogel coating film for different time and area. Then we compared the difference of burned paper weight before administration and after administration model burns, burn local skin irritation points infection, skin crusting and scabs from th...

  12. Measurement of thickness of thin water film in two-phase flow by capacitance method

    International Nuclear Information System (INIS)

    Sun, R.K.; Kolbe, W.F.; Leskovar, B.; Turko, B.

    1981-09-01

    A technique has been developed for measuring water film thickness in a two-phase annular flow system by the capacitance method. An experimental model of the flow system with two types of electrodes mounted on the inner wall of a cylindrical tube has been constructed and evaluated. The apparatus and its ability to observe fluctuations and wave motions of the water film passing over the electrodes is described in some detail

  13. Interaction domains in high-performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, T.G. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)], E-mail: t.woodcock@ifw-dresden.de; Khlopkov, K. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); Walther, A. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Dempsey, N.M.; Givord, D. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); Schultz, L.; Gutfleisch, O. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2009-05-15

    The magnetic domain structure in sputtered NdFeB thick films has been imaged by magnetic force microscopy. The local texture of the films was investigated by electron backscatter diffraction. The average misorientation of the grains was shown to decrease with increasing substrate temperature during deposition. Interaction domains were observed and are discussed with reference (i) to the sample grain size compared to the single domain particle size and (ii) to sample texture.

  14. Online terahertz thickness measurement in films and coatings

    Science.gov (United States)

    Duling, Irl N.; White, Jeffrey S.

    2017-02-01

    Pulsed terahertz systems are currently being deployed for online process control and quality control of multi-layered products for use in the building products and aerospace industries. While many laboratory applications of terahertz can allow waveforms to be acquired at rates of 1 - 40 Hz, online applications require measurement rates of in excess of 100Hz. The existing technologies of thickness measurement (nuclear, x-ray, or laser gauges) have rates between 100 and 1000 Hz. At these rates, the single waveform bandwidth must still remain at 2THz or above to allow thinner layers to be measured. In the applications where terahertz can provide unique capability (e.g. multi-layer thickness, delamination, density) long-term stability must be guaranteed within the tolerance required by the measurement. This can mean multi-day stability of less than a micron. The software that runs on these systems must be flexible enough to allow multiple product configurations, while maintaining the simplicity required by plant operators. The final requirement is to have systems that can withstand the environmental conditions of the measurement. This might mean qualification in explosive environments, or operation in hot, wet or dusty environments. All of these requirements can put restrictions on not only the voltage of electronic circuitry used, but also the wavelength and optical power used for the transmitter and receiver. The application of terahertz systems to online process control presents unique challenges that not only effect the physical design of the system, but can also effect the choices made on the terahertz technology itself.

  15. The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

    Science.gov (United States)

    Polat, B Deniz; Keles, Ozgul

    2015-12-01

    The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

  16. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  17. c-Axis correlated extended defects and critical current in YBa2Cu3Ox films grown on Au and Ag-nano dot decorated substrates

    International Nuclear Information System (INIS)

    Mikheenko, P.; Sarkar, A.; Dang, V.-S.; Tanner, J.L.; Abell, J.S.; Crisan, A.

    2009-01-01

    We report measurements of critical current in YBa 2 Cu 3 O x films deposited on SrTiO 3 substrates decorated with silver and gold nanodots. An increase in critical current in these films, in comparison with the films deposited on non-decorated substrates, has been achieved. We argue that this increase comes from the c-axis correlated extended defects formed in the films and originated from the nanodots. Additionally to creating extended defects, the nanodots pin them and prevent their exit from the sample during the film growth, thus keeping a high density of defects and providing a lower rate of decrease of the critical current with the thickness of the films. The best pinning is achieved in the samples with silver nanodots by optimising their deposition temperature. The nanodots grown at a temperature of a few hundred deg. C have a small diameter of a few nanometres and a high surface density of 10 11 -10 12 particles/cm 2 . We give evidence of c-axis correlated extended defects in YBa 2 Cu 3 O x films by planar and cross-sectional atomic force microscopy, transmission electron microscopy and angle-dependent transport measurements of critical current.

  18. Depth profiling of transport properties of in-situ grown YBa_2Cu_3O_7-x films for coated conductor applications

    Science.gov (United States)

    Jo, William; Huh, J.-U.; Hammond, R. H.; Beasley, M. R.

    2003-03-01

    We report depth profiling of the local critical current density and resistivity of YBa_2Cu_3O_7-x (YBCO) films grown by in-situ electron beam evaporation. The method provides important information on the uniformity of the films, and therefore on the commonly observed property that the critical currents of coated conductor high temperature superconductor films do not scale linearly with thickness. Using a methodology of layer-by-layer etching, depth profiling of critical currents and resistivity of the films has been achieved. We use a Bromine methanol mixture to etch down YBCO films with an etch rate of 60 nm/min. At each step, we also observe surface morphology using high resolution scanning electron microscopy. In this talk, we report further study of the results found earlier that YBCO films deposited at high rates are composed of an upper layer of defected YBCO with a local Jc of 5 - 7 MA/cm^2 and a lower more perfect layer with no critical current capacity. The information derived may be useful in the characterization and optimization of superconducting thin films for electrical power and other applications.

  19. Towards a new thickness-independent gamma radiation plastic film dosimeter

    International Nuclear Information System (INIS)

    Vieira, Marli Barbosa; Araujo, Patricia L.; Araujo, Elma S.

    2013-01-01

    A 100% national single-use gamma radiation plastic film dosimeter is presented in this work. A new approach for the development of this material allowed a step forward in the performance of poly (methyl metacrylate) films (PMMA) colored with bromothymol blue (BTB) acid-base indicator. We manage to improve dosimeter performance by introducing a gamma radiation insensitive dye to compensate film thickness variations. By doing so, we were able to obtain consistent dose-response correlations within a set of samples presenting 46 to 110 micrometers in thickness. Hence, our PMMA/BTB-P film dosimeter is suitable to measure absorbed dose in the 2-100kGy range even when film thickness undergoes more than 100% of variation. In addition, dose response data remain practically unaltered for four months after the exposure, when dosimeter films are kept in dark conditions and under refrigeration. The radiation effects on the optical properties were evaluated for Ultraviolet-Visible (UV-Vis) spectrophotometric analysis. Data of characteristic dose-response correlation in terms of changes in the maximum UV-Vis absorption due to radiation, and stability in time are also described. This potential new product is a promising tool for industrial radiation facilities, especially in gamma sterilization of medical supplies. (author)

  20. Structure and magnetoresistance of La0.67Ca0.33MnO3 films grown coherently on (001)NdGaO3

    International Nuclear Information System (INIS)

    Bojkov, Yu.A.; Danilov, V.A.; Bojkov, A.Yu.

    2003-01-01

    The (001) La 0.67 Ca 0.33 MnO 3 films, 40-120 nm thick, grown through the method of the laser evaporation on the (001)NdGaO 3 , are studied. The crystalline lattice parameters, measured for the La 0.67 Ca 0.33 MnO 3 film in the substrate plane α parallel = 3.851 A and along the normal to its surface α perpendicular = 3.850 A practically coincide with the parameter of the pseudocubic elementary cell of the neodymium gallate. The elementary cell volume in the La 0.67 Ca 0.33 MnO 3 film was insignificantly lesser than the corresponding value for the stoichiometric voluminous samples. The position of the maximum on the specific resistance dependence on the temperature did not depend on the La 0.67 Ca 0.33 MnO 3 film thickness. The maximum values of the negative magnetoresistance (MR ≅ 0.25, H = 0.4 T) for the La 0.67 Ca 0.33 MnO 3 films were observed at the temperatures of 239-244 K [ru

  1. CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. N. CHAVAN

    2011-06-01

    Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

  2. On the conductive properties of MgO films grown on ultrathin hexagonal close-packed Co(0001) layer

    International Nuclear Information System (INIS)

    Gladczuk, L.; Aleszkiewicz, M.

    2013-01-01

    Here we present a scanning tunneling microscopy study of electrical conductivity of (110)-oriented MgO ultrathin films grown on hexagonal close-packed Co(0001) surface by molecular beam epitaxy, being a good candidate for tunneling barrier for future-generation spintronic devices. Three-dimensional growth of the tunneling barrier, expected for compressive strains emerging at the Co/MgO interface, is demonstrated by reflection high-energy electron diffraction and atomic force microscopy. The 5 eV height of the full barrier of MgO is reached at a layer thickness of 4 nm. Thinner MgO layers exhibit randomly distributed spots of the high conductance on the tunneling current map. The current–voltage curves indicate the existence of vacancies in MgO crystal lattice, lowering the resistivity of the tunneling barrier. - Highlights: • Conductivity of MgO barrier in MgO/hexagonal close-packed-Co bilayer • Conductivity strongly varies with MgO thickness • MgO barrier exhibits randomly distributed spots of particularly high conductance • Tunneling current–voltage curves indicate the existence of vacancies in MgO lattice

  3. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya; Vacha, Martin

    2012-01-01

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

  4. Stoichiometry, thickness and crystallinity of MOCVD grown Hg{sub 1x-y}Cd{sub x}Mn{sub y}Te determined by nuclear techniques of analysis

    Energy Technology Data Exchange (ETDEWEB)

    Studd, W B; Johnston, P N; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Leech, P W [Applied Research and Developement, Telecom Australia, Clayton, VIC (Australia)

    1994-12-31

    The quaternary semi-conductor Hg{sub 1-x-y}Cd{sub x}Mn{sub y}Te has been grown by Metal Organic Chemical Vapour Deposition using the Interdiffused Multi-layer Process. The layers have been analysed by Ion beam (PIXE, RBS, channeling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary considerably over the film. Channeling, XRD and RHEED have been combined to show that the layer is polycrystalline. 14 refs., 3 figs.

  5. Stoichiometry, thickness and crystallinity of MOCVD grown Hg{sub 1x-y}Cd{sub x}Mn{sub y}Te determined by nuclear techniques of analysis

    Energy Technology Data Exchange (ETDEWEB)

    Studd, W.B.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Leech, P.W. [Applied Research and Developement, Telecom Australia, Clayton, VIC (Australia)

    1993-12-31

    The quaternary semi-conductor Hg{sub 1-x-y}Cd{sub x}Mn{sub y}Te has been grown by Metal Organic Chemical Vapour Deposition using the Interdiffused Multi-layer Process. The layers have been analysed by Ion beam (PIXE, RBS, channeling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary considerably over the film. Channeling, XRD and RHEED have been combined to show that the layer is polycrystalline. 14 refs., 3 figs.

  6. Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2011-03-15

    Research highlights: {yields} Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. {yields} The graphitization of the films increased with increased film thickness. {yields} The wear resistance of the films increased though their adhesion strength decreased. {yields} The corrosion potentials of the films shifted to more negative values. {yields} However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC fi